Updated on 2025/04/13

写真a

 
KANO Emi
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Assistant Professor
Graduate School
Graduate School of Engineering
Title
Assistant Professor

Degree 1

  1. 博士(工学) ( 2017.3   筑波大学 ) 

Research Areas 1

  1. Nanotechnology/Materials / Nanostructural physics

Current Research Project and SDGs 1

  1. 最先端電子顕微鏡法による窒化ガリウム(GaN)を中心とした窒化物半導体の物性解析

Awards 1

  1. M&M Postdoctoral Scholar Awards

    2017.7   Microscopy & Microanalysis  

 

Papers 24

  1. Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration Reviewed

    Nakashima T., Kano E., Kataoka K., Arai S., Sakurai H., Narita T., Sierakowski K., Bockowski M., Nagao M., Suda J., Kachi T., Ikarashi N.

    Applied Physics Express   Vol. 14 ( 1 )   2021.1

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:Applied Physics Express  

    Defect time-evolution was investigated in Mg ion-implanted GaN after annealing at 1573 K for an unprecedentedly long duration. Transmission electron microscopy directly revealed that annealing for over 30 min reduced defects inhibiting Mg activation, just like annealing at 1753 K for a short duration. The cathodoluminescence intensity of donor-acceptor pair originating from Mg acceptors increased as the duration increased, and the intensity after annealing for 60 min was higher than after short-duration annealing at 1753 K. These show the potential of lowering the annealing temperature by prolonging the duration, which would lead to practical annealing technology for Mg ion-implanted GaN.

    DOI: 10.35848/1882-0786/abd308

    Scopus

  2. Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN Open Access

    Nagase, T; Chokawa, K; Kano, E; Fukuta, K; Sasaki, T; Fujikawa, S; Takahashi, M; Shiraishi, K; Oshiyama, A; Araki, T; Ikarashi, N

    JOURNAL OF APPLIED PHYSICS   Vol. 137 ( 5 )   2025.2

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    Publisher:Journal of Applied Physics  

    Heterostructures of covalent semiconductors provide an invaluable platform for synthesizing the distinct properties of materials, leading to unprecedented functions in electronic and optoelectronic devices. The main challenge has been to forge high-quality interfaces of the heterostructures that guarantee the designed properties. To date, high-quality interfaces have been attained in heterostructures with a lattice mismatch of less than a few percent. However, for highly lattice-mismatched interfaces, such as InN/GaN (0001) (11.1% mismatch), interfacial structures remain unknown. Here, we investigate the atomic structure of the InN/GaN interface using atomic-resolution transmission electron microscopy and large-scale density-functional calculations. Our findings show that an interface structure without any misfit dislocations is formed, where an InN single monolayer at the interface accommodates the entire misfit. We argue that the mechanism underlying the formation of this interface monolayer is the flexibility of the group III-nitrogen bond network.

    DOI: 10.1063/5.0231584

    Open Access

    Web of Science

    Scopus

  3. Engineered interface charges and traps in GaN MOSFETs providing high channel mobility and <i>E</i>-mode operation Open Access

    Narita, T; Ito, K; Iguchi, H; Kikuta, D; Kanechika, M; Tomita, K; Iwasaki, S; Kataoka, K; Kano, E; Ikarashi, N; Horita, M; Suda, J; Kachi, T

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 12 )   2024.12

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    Publisher:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  

    This review focuses on controlling interface charges and traps to obtain minimal channel resistance and stable enhancement-mode operation in GaN MOSFETs. Interface traps reduce the free electron density and act as Coulomb scattering centers, thus reducing the channel mobility. Oxide traps cause instability of threshold voltage (Vth) by trapping electrons or holes under gate bias. In addition, the Vth is affected by the overall distribution of interface charges. The first key is a design of a bilayer structure to simultaneously obtain good insulating properties and interface properties. The other key is the optimization of post-deposition annealing to minimize oxide traps and interface fixed charges. Consequently, the gate structure of an AlSiO/AlN/p-type GaN has been designed. Reductions in Vth as a result of polarization charges can be eliminated using an m-plane trench channel, resulting in a channel mobility of 150 cm2 V-1s-1 and Vth of 1.3 V.

    DOI: 10.35848/1347-4065/ad8c4f

    Open Access

    Web of Science

    Scopus

  4. Transport Properties in GaN Metal-Oxide-Semiconductor Field-Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p-Type GaN Gate Stack

    Narita, T; Ito, K; Tomita, K; Iguchi, H; Iwasaki, S; Horita, M; Kano, E; Ikarashi, N; Kikuta, D

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 18 ( 12 )   2024.12

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    Publisher:Physica Status Solidi - Rapid Research Letters  

    The factors limiting channel mobility in AlSiO/p-type GaN metal–oxide–semiconductor (MOS) field-effect transistors are examined by performing Hall-effect measurements in conjunction with a gate bias, with and without a thin AlN interlayer. In the absence of this interlayer, the free carrier concentration associated with the Hall effect is significantly reduced compared with the net gate charge density estimated from capacitance–voltage data, indicating that electrons are trapped to a significant extent at the MOS interface. These interface traps are found to have an energy ≈20 meV above the Fermi level in strong inversion based on temperature-dependent Hall effect data. The insertion of a 0.8 nm-thick AlN interlayer eliminates charge trapping such that almost all gate charges are mobile. The mobility components could be divided into types based on their effect on the effective electric field perpendicular to the channel. Coulomb scattering centers resulting from interface states are evidently reduced by inserting the AlN interlayer, which also enhances the channel mobility to over 150 cm2 V−1s−1.

    DOI: 10.1002/pssr.202400141

    Web of Science

    Scopus

  5. Discovering the incorporation limits for wurtzite AlP<sub>y</sub>N<sub>1<bold>-</bold>y</sub> grown on GaN by metalorganic vapor phase epitaxy

    Yang, X; Furusawa, Y; Kano, E; Ikarashi, N; Amano, H; Pristovsek, M

    APPLIED PHYSICS LETTERS   Vol. 125 ( 13 )   2024.9

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    Publisher:Applied Physics Letters  

    We report on the growth of AlPN on GaN/sapphire templates by metalorganic vapor phase epitaxy using tertiarybutylphosphine (tBP) and NH3 as group-V precursors. P is easy to incorporate into the group-III lattice site, forming PAl anti-site defects and shrinking lattice constants that are even beyond AlN since Al is larger than P. We found that higher temperatures favor P incorporation on the N-sublattice, forming AlPyN1−y, while growth temperatures below 1000 °C result in dominant P incorporation on the Al-sublattice, forming PAl anisites. Similarly, larger NH3 flows stabilize GaN, leading to flat interfaces, but favor the formation of PAl. Furthermore, the P incorporation into AlPyN1−y is non-linear. At very low tBP flows, it initially increases to reach a maximum. Further increasing the tBP flow increases mostly the incorporation of P on the Al-sublattice, and the c-lattice constant decreases again. This leaves a small window of low V/III ratios below 5 and low P/N ratios of 1% or smaller, leading up to ∼4% P incorporation at typical growth temperatures of GaN. However, at such low V/III ratios, GaN is not stable even with N2 carrier gas and requires optimized switching sequences to minimize its decomposition and preserve flat interfaces. Eventually, a 10 nm coherent layer of AlP0.01N0.99 could be reproducibly grown on top of GaN channels with a smooth surface, an abrupt AlPN/GaN interface, and a two-dimensional electron gas with an electron mobility of ∼675 cm2/V s and a sheet carrier density of 1.5 × 1013 cm−2 at room temperature.

    DOI: 10.1063/5.0225115

    Web of Science

    Scopus

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Presentations 16

  1. Atomic resolution analysis of extended defects and their evolution during annealing in Mg ion-implanted GaN Invited International coauthorship International conference

    Emi Kano

    Fifth Japan-Canada Microscopy Societies Joint Symposium 2024  2024.6.4 

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    Event date: 2024.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Ottawa   Country:Canada  

  2. TEM and SIMS analysis of pressure effect on diffusion of point defects in Mg-ion-implanted GaN International coauthorship International conference

    Emi Kano

    The 14th International Conference on Nitride Semiconductors   2023.11.14 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

  3. Impacts on dopant activation of extended defects and Mg agglomeration in Mg-ion-implanted GaN International coauthorship International conference

    Emi Kano

    The 20th International Microscopy Congress  2023.9.14 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

  4. In-situ TEM Observation of Pt-terminating Carbyne on Graphene International conference

    Microscopy & Microanalysis 2014 Meeting 

  5. Etching and Mending of Graphene Edges by Cu and Pt Atoms International conference

    Microscopy & Microanalysis 2017 Meeting 

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Research Project for Joint Research, Competitive Funding, etc. 1

  1. 遷移金属ダイカルコゲナイドの構造物性解析

    2022.4 - 2023.3

    内藤科学技術振興財団研究助成 

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\1000000

 

Teaching Experience (On-campus) 1

  1. 電気電子情報工学実験第1

    2020