Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Assistant Professor
Graduate School
Graduate School of Engineering
Title
Assistant Professor
KANO Emi
Research Areas
Research Areas 1
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Nanotechnology/Materials / Nanostructural physics
Current Research Project and SDGs
Current Research Project and SDGs 1
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最先端電子顕微鏡法による窒化ガリウム（GaN）を中心とした窒化物半導体の物性解析
Awards
Awards 1
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M&M Postdoctoral Scholar Awards
2017.7 Microscopy & Microanalysis
Papers
Papers 24
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Nakashima T., Kano E., Kataoka K., Arai S., Sakurai H., Narita T., Sierakowski K., Bockowski M., Nagao M., Suda J., Kachi T., Ikarashi N.
Applied Physics Express Vol. 14 ( 1 ) 2021.1
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Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Applied Physics Express
Defect time-evolution was investigated in Mg ion-implanted GaN after annealing at 1573 K for an unprecedentedly long duration. Transmission electron microscopy directly revealed that annealing for over 30 min reduced defects inhibiting Mg activation, just like annealing at 1753 K for a short duration. The cathodoluminescence intensity of donor-acceptor pair originating from Mg acceptors increased as the duration increased, and the intensity after annealing for 60 min was higher than after short-duration annealing at 1753 K. These show the potential of lowering the annealing temperature by prolonging the duration, which would lead to practical annealing technology for Mg ion-implanted GaN.
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Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN Open Access
Nagase, T; Chokawa, K; Kano, E; Fukuta, K; Sasaki, T; Fujikawa, S; Takahashi, M; Shiraishi, K; Oshiyama, A; Araki, T; Ikarashi, N
JOURNAL OF APPLIED PHYSICS Vol. 137 ( 5 ) 2025.2
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Publisher：Journal of Applied Physics
Heterostructures of covalent semiconductors provide an invaluable platform for synthesizing the distinct properties of materials, leading to unprecedented functions in electronic and optoelectronic devices. The main challenge has been to forge high-quality interfaces of the heterostructures that guarantee the designed properties. To date, high-quality interfaces have been attained in heterostructures with a lattice mismatch of less than a few percent. However, for highly lattice-mismatched interfaces, such as InN/GaN (0001) (11.1% mismatch), interfacial structures remain unknown. Here, we investigate the atomic structure of the InN/GaN interface using atomic-resolution transmission electron microscopy and large-scale density-functional calculations. Our findings show that an interface structure without any misfit dislocations is formed, where an InN single monolayer at the interface accommodates the entire misfit. We argue that the mechanism underlying the formation of this interface monolayer is the flexibility of the group III-nitrogen bond network.
DOI： 10.1063/5.0231584
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Narita, T; Ito, K; Iguchi, H; Kikuta, D; Kanechika, M; Tomita, K; Iwasaki, S; Kataoka, K; Kano, E; Ikarashi, N; Horita, M; Suda, J; Kachi, T
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 63 ( 12 ) 2024.12
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Publisher：Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
This review focuses on controlling interface charges and traps to obtain minimal channel resistance and stable enhancement-mode operation in GaN MOSFETs. Interface traps reduce the free electron density and act as Coulomb scattering centers, thus reducing the channel mobility. Oxide traps cause instability of threshold voltage (Vth) by trapping electrons or holes under gate bias. In addition, the Vth is affected by the overall distribution of interface charges. The first key is a design of a bilayer structure to simultaneously obtain good insulating properties and interface properties. The other key is the optimization of post-deposition annealing to minimize oxide traps and interface fixed charges. Consequently, the gate structure of an AlSiO/AlN/p-type GaN has been designed. Reductions in Vth as a result of polarization charges can be eliminated using an m-plane trench channel, resulting in a channel mobility of 150 cm2 V-1s-1 and Vth of 1.3 V.
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Narita, T; Ito, K; Tomita, K; Iguchi, H; Iwasaki, S; Horita, M; Kano, E; Ikarashi, N; Kikuta, D
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Vol. 18 ( 12 ) 2024.12
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Publisher：Physica Status Solidi - Rapid Research Letters
The factors limiting channel mobility in AlSiO/p-type GaN metal–oxide–semiconductor (MOS) field-effect transistors are examined by performing Hall-effect measurements in conjunction with a gate bias, with and without a thin AlN interlayer. In the absence of this interlayer, the free carrier concentration associated with the Hall effect is significantly reduced compared with the net gate charge density estimated from capacitance–voltage data, indicating that electrons are trapped to a significant extent at the MOS interface. These interface traps are found to have an energy ≈20 meV above the Fermi level in strong inversion based on temperature-dependent Hall effect data. The insertion of a 0.8 nm-thick AlN interlayer eliminates charge trapping such that almost all gate charges are mobile. The mobility components could be divided into types based on their effect on the effective electric field perpendicular to the channel. Coulomb scattering centers resulting from interface states are evidently reduced by inserting the AlN interlayer, which also enhances the channel mobility to over 150 cm2 V−1s−1.
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Yang, X; Furusawa, Y; Kano, E; Ikarashi, N; Amano, H; Pristovsek, M
APPLIED PHYSICS LETTERS Vol. 125 ( 13 ) 2024.9
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Publisher：Applied Physics Letters
We report on the growth of AlPN on GaN/sapphire templates by metalorganic vapor phase epitaxy using tertiarybutylphosphine (tBP) and NH3 as group-V precursors. P is easy to incorporate into the group-III lattice site, forming PAl anti-site defects and shrinking lattice constants that are even beyond AlN since Al is larger than P. We found that higher temperatures favor P incorporation on the N-sublattice, forming AlPyN1−y, while growth temperatures below 1000 °C result in dominant P incorporation on the Al-sublattice, forming PAl anisites. Similarly, larger NH3 flows stabilize GaN, leading to flat interfaces, but favor the formation of PAl. Furthermore, the P incorporation into AlPyN1−y is non-linear. At very low tBP flows, it initially increases to reach a maximum. Further increasing the tBP flow increases mostly the incorporation of P on the Al-sublattice, and the c-lattice constant decreases again. This leaves a small window of low V/III ratios below 5 and low P/N ratios of 1% or smaller, leading up to ∼4% P incorporation at typical growth temperatures of GaN. However, at such low V/III ratios, GaN is not stable even with N2 carrier gas and requires optimized switching sequences to minimize its decomposition and preserve flat interfaces. Eventually, a 10 nm coherent layer of AlP0.01N0.99 could be reproducibly grown on top of GaN channels with a smooth surface, an abrupt AlPN/GaN interface, and a two-dimensional electron gas with an electron mobility of ∼675 cm2/V s and a sheet carrier density of 1.5 × 1013 cm−2 at room temperature.
DOI： 10.1063/5.0225115
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Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion-Implanted GaN Open Access
Kano, E; Uzuhashi, J; Kobayashi, K; Ishikawa, K; Sawabe, K; Narita, T; Sierakowski, K; Bockowski, M; Ohkubo, T; Kachi, T; Ikarashi, N
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Vol. 18 ( 9 ) 2024.9
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Publisher：Physica Status Solidi - Rapid Research Letters
In Mg ion implantation doping of GaN, sequential N ion implantation reportedly changes Mg concentrations in the Mg ion-implanted region and the underlying region after activation annealing. The impact of sequential N ion implantation on defects and Mg distribution after postimplantation annealing is investigated. The atomic-resolution analyses show that, in the Mg ion-implanted region, the N ion implantation increases the concentration of MgGa. It is thus concluded that the Mg soluble in GaN by Mg ion implantation is increased by N ion implantation. The rest of the Mg atoms agglomerate to form clusters on the extended defects, and their concentration is also increased by the N implantation. The coarsening of extended defects is suppressed by the N ion implantation: the defects in the Mg+N-implanted sample are nanoscale interstitial-type defects, and they do not grow or annihilate after annealing. This indicates that the N implantation changes the concentrations of interstitials.
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Observation of 2D-magnesium-intercalated gallium nitride superlattices Open Access
Wang, J; Cai, WT; Lu, WF; Lu, S; Kano, E; Agulto, VC; Sarkar, B; Watanabe, H; Ikarashi, N; Iwamoto, T; Nakajima, M; Honda, Y; Amano, H
NATURE Vol. 631 ( 8019 ) page： 67 - + 2024.7
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Language：English Publisher：Nature
Since the demonstration of p-type gallium nitride (GaN) through doping with substitutional magnesium (Mg) atoms1,2, rapid and comprehensive developments, such as blue light-emitting diodes, have considerably shaped our modern lives and contributed to a more carbon-neutral society3–5. However, the details of the interplay between GaN and Mg have remained largely unknown6–11. Here we observe that Mg-intercalated GaN superlattices can form spontaneously by annealing a metallic Mg film on GaN at atmospheric pressure. To our knowledge, this marks the first instance of a two-dimensional metal intercalated into a bulk semiconductor, with each Mg monolayer being intricately inserted between several monolayers of hexagonal GaN. Characterized as an interstitial intercalation, this process induces substantial uniaxial compressive strain perpendicular to the interstitial layers. Consequently, the GaN layers in the Mg-intercalated GaN superlattices exhibit an exceptional elastic strain exceeding −10% (equivalent to a stress of more than 20 GPa), among the highest recorded for thin-film materials12. The strain alters the electronic band structure and greatly enhances hole transport along the compression direction. Furthermore, the Mg sheets induce a unique periodic transition in GaN polarity, generating polarization-field-induced net charges. These characteristics offer fresh insights into semiconductor doping and conductivity enhancement, as well as into elastic strain engineering of nanomaterials and metal–semiconductor superlattices13.
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Ito K., Narita T., Kanechika M., Iguchi H., Iwasaki S., Kikuta D., Kano E., Ikarashi N., Tomita K., Suda J., Kachi T.
Technical Digest - International Electron Devices Meeting, IEDM 2024
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Publisher：Technical Digest - International Electron Devices Meeting, IEDM
The polarization in a III-nitride system enhances conductivity in a MOS channel, while reduces the threshold voltage (Vth) and causes its temperature dependence. To simultaneously obtain a high channel mobility and a stable Emode operation, the gate insulator composed of an amorphous AlSiO and a crystalline AlN are applied to the mplane GaN channel using a trench gate structure. By inserting a 1.1 nm thick AlN, interface traps on a m-plane MOS channel are minimized, resulting in the effective mobility over 180 cm2 V–1s–1. Different from a MOSFET on a c-plane, the Vth value does not depend on the AlN thickness and is approximately 1 V for the acceptor doping at 1017 cm–3. Furthermore, the Vth on the m-plane GaN channel exhibits little temperature dependence in the range of 223 to 473 K because of no pyroelectric effect.
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Ito, K; Iwasaki, S; Tomita, K; Kano, E; Ikarashi, N; Kataoka, K; Kikuta, D; Narita, T
APPLIED PHYSICS EXPRESS Vol. 16 ( 7 ) 2023.7
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Publisher：Applied Physics Express
By controlling a metal-oxide-semiconductor interface of an AlSiO/GaN system, the electron inversion channel mobility was significantly improved to 229 cm2 V−1 s−1 in a field-effect transistor. A 3 nm thick AlN interlayer formed by atomic layer deposition effectively suppressed the oxidation of the GaN surface and reduced the border traps, resulting in high channel mobility. An additional nitrogen radical treatment before AlN deposition further improved the subthreshold slope and the channel mobility, which was consistent with the lower charged defects extracted from the mobility analysis in the low effective normal field region.
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Kano Emi, Otsuki Ritsuo, Kobayashi Koki, Kataoka Keita, Sierakowski Kacper, Bockowski Michal, Nagao Masahiro, Narita Tetsuo, Kachi Tetsu, Ikarashi Nobuyuki
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 2023.3
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Publisher：Physica Status Solidi - Rapid Research Letters
Herein, transmission electron microscopy direct observations are used to examine the time evolution of dislocation loops in Mg-ion-implanted GaN during annealing in N2 atmospheres of 2.0 and 0.3 GPa. It is indicated in the results that the diffusion of the native defects, for both interstitials and vacancies, is retarded during annealing at the higher pressure. Furthermore, secondary ion mass spectrometry shows that annealing at the higher pressure retards the migration of Mg and increases Mg-acceptor concentration in the ion-implanted region. These findings provide a design principle of the postimplantation annealing process to activate ion-implanted Mg in GaN.
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Ito K., Narita T., Iguchi H., Iwasaki S., Kikuta D., Kano E., Ikarashi N., Tomita K., Horita M., Suda J.
Technical Digest - International Electron Devices Meeting, IEDM 2023
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Publisher：Technical Digest - International Electron Devices Meeting, IEDM
Polarization engineering by AIN interlayers (AlN-ILs) deposited via plasma-enhanced atomic layer deposition was demonstrated in AlSiO/p-type GaN MOSFETs. Transmission electron microscopy observations revealed that the AlN-ILs were grown on GaN epitaxially and therefore could induce polarization charges, similar to AlGaN/GaN. The decrease in the threshold voltage (Vth) with increasing AIN-IL thickness corresponded to the polarization charge density. In addition, insertion of the AIN-IL suppressed the positive bias instability by less than 0.05 V. By controlling the AIN-IL thickness and the channel p-type doping, we controlled the Vth the range from -3 to 5 V and achieved enhanced channel mobility compared with that for the corresponding MOSFET without an AIN-IL.
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Kano E., Kataoka K., Uzuhashi J., Chokawa K., Sakurai H., Uedono A., Narita T., Sierakowski K., Bockowski M., Otsuki R., Kobayashi K., Itoh Y., Nagao M., Ohkubo T., Hono K., Suda J., Kachi T., Ikarashi N.
Journal of Applied Physics Vol. 132 ( 6 ) 2022.8
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Publisher：Journal of Applied Physics
We carried out atomic-scale observations of Mg-ion-implanted GaN by transmission electron microscopy (TEM) and atom probe tomography (APT) to clarify the crystallographic structures of extended defects and Mg agglomerations that form during post-implantation annealing. The complementary TEM and APT analyses have shown that Mg atoms agglomerate at dislocations that bound extended defects. The concentration of Mg is higher at the dislocations with a larger Burgers vector. This indicates that Mg agglomeration is caused by the pressure at the dislocations. Mg concentration in highly Mg-rich regions is 1 at. %, which exceeds the solubility limit of Mg in GaN. We investigated isothermal and isochronal evolution of the defects by TEM, cathodoluminescence analysis, and positron annihilation spectroscopy. The results indicated that the intensity of donor-acceptor pair emission increases with the annealing temperature and duration and reaches a maximum after elimination of the extended defects with highly Mg-rich regions. These results strongly suggest that such extended defects reduce the acceptor formation and that they as well as the previously reported compensating centers, such as N-related vacancies, can inhibit the formation of p-type GaN. The mechanism by which the extended defects reduce acceptor formation is discussed.
DOI： 10.1063/5.0097866
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Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region Reviewed
Ono Ryo, Imai Shinya, Kusama Yuta, Hamada Takuya, Hamada Masaya, Muneta Iriya, Kakushima Kuniyuki, Tsutsui Kazuo, Kano Emi, Ikarashi Nobuyuki, Wakabayashi Hitoshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SC ) 2022.5
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Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics
Sputtering enables uniform and clean deposition over a large area, which is an issue with exfoliation and chemical vapor deposition methods. On the other hand, the process of physical vapor deposition (PVD) film formation has not yet been clarified. We prepared several samples from the sub-monolayer region, and performed Raman spectroscopy, X-ray photon spectroscopy and high-angle annular dark-field scanning transmission electron microscopy. From these results, the internal stresses inherent to PVD films, the bonding states specific to sub-monolayers, and the unique film structure and the grain formation process of PVD films were discussed from the perspective of sub-monolayers. As a conclusion, we found that it is important to suppress the formation of sub-monolayers on the substrate to completely form the first layer.
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Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN Reviewed
Itoh Yuta, Watanabe Hirotaka, Ando Yuto, Kano Emi, Deki Manato, Nitta Shugo, Honda Yoshio, Tanaka Atsushi, Ikarashi Nobuyuki, Amano Hiroshi
APPLIED PHYSICS EXPRESS Vol. 15 ( 2 ) 2022.2
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Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Applied Physics Express
We evaluated the beam current dependence of defect formation during Mg ion implantation into GaN at a high temperature of 1100 °C with two beam currents. Photoluminescence spectra suggest that low-beam-current implantation reduced the vacancy concentration and activated Mg to a greater extent. Moreover, scanning transmission electron microscopy analysis showed that low-beam-current implantation reduced the density of Mg segregation defects with inactive Mg and increased the density of intrinsic dislocation loops, suggesting decreases in the densities of Ga and N vacancies. The formation of these defects depended on beam current, which is an important parameter for defect suppression.
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Phase plates in the transmission electron microscope: operating principles and applications Reviewed
Malac Marek, Hettler Simon, Hayashida Misa, Kano Emi, Egerton Ray F, Beleggia Marco
Microscopy Vol. 70 ( 1 ) page： 75 - 115 2020.12
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Two-Dimensional CuO Inside the Supportive Bilayer Graphene Matrix Reviewed
Kvashnin D. G., Kvashnin A. G., Kano E., Hashimoto A., Takeguchi M., Naramoto H., Sakai S., Sorokin P. B.
The Journal of Physical Chemistry C Vol. 123 ( 28 ) page： 17459 - 17465 2019.6
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Charging of carbon thin films in scanning and phase-plate transmission electron microscopy.
Hettler S, Kano E, Dries M, Gerthsen D, Pfaffmann L, Bruns M, Beleggia M, Malac M
Ultramicroscopy Vol. 184 ( Pt A ) page： 252-266 2018.1
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Language：English Publishing type：Research paper (scientific journal)
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One-atom-thick 2D copper oxide clusters on graphene.
Kano E, Kvashnin DG, Sakai S, Chernozatonskii LA, Sorokin PB, Hashimoto A, Takeguchi M
Nanoscale Vol. 9 ( 11 ) page： 3980-3985 2017.3
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Opposite effects of Cu and Pt atoms on graphene edges Reviewed
E. Kano, A. Hashimoto, and M. Takeguchi
Applied Physics Express Vol. 10 page： 25104 2017.1
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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling Reviewed
Kano Emi, Hashimoto Ayako, Kaneko Tomoaki, Tajima Nobuo, Ohno Takahisa, Takeguchi Masaki
Nanoscale Vol. 8 ( 1 ) page： 529 - 535 2015.11
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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1039/C5NR05913E
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Grain structures of nitrogen-doped graphene synthesized by solid source-based chemical vapor deposition Reviewed
Shinde Sachin M., Kano Emi, Kalita Golap, Takeguchi Masaki, Hashimoto Ayako, Tanemura Masaki
Carbon Vol. 96 page： 448 - 453 2015.9
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Language：English Publishing type：Research paper (scientific journal)
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Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition Reviewed
Murakami Katsuhisa, Tanaka Shunsuke, Hirukawa Ayaka, Hiyama Takaki, Kuwajima Tomoya, Kano Emi, Takeguchi Masaki, Fujita Jun Ichi
Applied Physics Letters Vol. 106 page： 093112 2015.3
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Direct observation of Pt-terminating carbyne on graphene Reviewed
Kano Emi, Takeguchi Masaki, Fujita Jun-ichi, Hashimoto Ayako
Carbon Vol. 80 page： 382 - 386 2014.9
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Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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In-situ observation of current-pulse-induced curling of graphene edges and carbon-cages production Reviewed
Nishijima Takuya, Ueki Ryuichi, Kano Emi, Fujita Jun-ichi
Japanese Journal of Applied Physics Vol. 51 page： 06FD20 2012.6
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Presentations
Presentations 16
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Atomic resolution analysis of extended defects and their evolution during annealing in Mg ion-implanted GaN Invited International coauthorship International conference
Emi Kano
Fifth Japan-Canada Microscopy Societies Joint Symposium 2024 2024.6.4
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Event date： 2024.6
Language：English Presentation type：Oral presentation (invited, special)
Venue：Ottawa Country：Canada
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TEM and SIMS analysis of pressure effect on diffusion of point defects in Mg-ion-implanted GaN International coauthorship International conference
Emi Kano
The 14th International Conference on Nitride Semiconductors 2023.11.14
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Event date： 2023.11
Language：English Presentation type：Oral presentation (general)
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Impacts on dopant activation of extended defects and Mg agglomeration in Mg-ion-implanted GaN International coauthorship International conference
Emi Kano
The 20th International Microscopy Congress 2023.9.14
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Event date： 2023.9
Language：English Presentation type：Oral presentation (general)
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In-situ TEM Observation of Pt-terminating Carbyne on Graphene International conference
Microscopy & Microanalysis 2014 Meeting
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Etching and Mending of Graphene Edges by Cu and Pt Atoms International conference
Microscopy & Microanalysis 2017 Meeting
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Atomic resolution analyses of Mg distribution and defect formation in Mg+N ion-implanted GaN International coauthorship International conference
Emi Kano
12th International Workshop on Nitride Semiconductors 2024.11.4 IWN
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Event date： 2024.11
Language：English
Venue：Hawaii Country：United States
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MOCVD-MoS2/sapphireの結晶方位に界面層が与える影響のTEM解析
狩野絵美
第85回応用物理学会秋季学術講演会 2024.9.20 応用物理学会
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Event date： 2024.9
Language：Japanese Presentation type：Oral presentation (general)
Venue：新潟 Country：Japan
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Mgイオン注入GaN中の自己欠陥とMgの拡散に対する静水圧の影響
狩野絵美
応用物理学会 2023.3.17 応用物理学会
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Event date： 2023.3
Language：Japanese Presentation type：Oral presentation (general)
Venue：上智大学四谷キャンパス Country：Japan
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GaNへのMgイオン注入により形成される結晶欠陥とMg凝集のアクセプタ形成に与える影響 International coauthorship
狩野絵美
応用物理学会 2022.9.21 応用物理学会
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Event date： 2022.9
Language：Japanese Presentation type：Oral presentation (general)
Venue：東北大学川内北キャンパス Country：Japan
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GaNへのMgイオン注入により形成される結晶欠陥の原子分解能分析 International coauthorship
大築立旺
応用物理学会 2022.9.21 応用物理学会
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Event date： 2022.9
Language：Japanese Presentation type：Oral presentation (general)
Venue：東北大学川内北キャンパス Country：Japan
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Thermal expansion coefficient of graphene measured by electron diffraction International conference
19th International Microscopy Congress
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Cu atoms at the edge of graphene International conference
Asian Graphene Forum
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One-atom thick two dimensional copper sheets on graphene International conference
Microscopical Society of Canada 43rd Annual Meeting
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In situ TEM observation of Cu-doped graphene International conference
The 2nd East-Asia Microscopy Conference
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Cu Atoms Reknit the Graphene Structures International conference
Microscopy & Microanalysis 2015 Meeting
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Pt-terminating Carbyne Observed by Aberration-Corrected TEM International conference
18th International Microscopy Congress
Research Project for Joint Research, Competitive Funding, etc.
Research Project for Joint Research, Competitive Funding, etc. 1
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遷移金属ダイカルコゲナイドの構造物性解析
2022.4 - 2023.3
内藤科学技術振興財団研究助成
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Authorship：Principal investigator Grant type：Competitive
Grant amount：\1000000
Teaching Experience (On-campus)
Teaching Experience (On-campus) 1
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電気電子情報工学実験第1
2020