研究者詳細 - 青木学聡

論文 - 青木学聡

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Ultrafine particle removal using gas cluster ion beam technology 査読有り

Kazuya Dobashi, Kensuke Inai, Misako Saito, Toshio Seki, Takaaki Aoki, Jiro Matsuo

IEEE Transactions on Semiconductor Manufacturing 26 巻 ( 3 ) 頁： 328 - 334 2013年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

In this paper, the ultrafine particle removal using CO2 gas cluster ion beam (GCIB) technology is investigated. The CO2 GCIB is irradiated the sample at an angle of 0 with respect to the surface normal. The higher particle removal efficiency can be achieved at the higher kinetic energy of the gas cluster, and the inside space of line and space pattern particles can be removed. We also suggested that the CO2 GCIB process has the high particle removal uniformity without redeposition of the removed particles. It is possible to remove the ultrafine particle as small as 12 nm in diameter (which is required for 2014 by ITRS 2011). The pattern damage is not observed for 45 nm poly-Si pattern. Moreover, the molecular dynamics simulation is performed to investigate the mechanisms of the particle removal by GCIB irradiation. © 1988-2012 IEEE.

DOI： 10.1109/TSM.2013.2268871

Molecular dynamics study of crater formation by core-shell structured cluster impact 査読有り

Aoki, T; Seki, T; Matsuo, J

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 282 巻頁： 29 - 32 2012年7月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Crater formation processes by the impacts of large clusters with binary atomic species were studied using molecular dynamics (MD) simulations. Argon and xenon atoms are artificially organized in core-shell cluster structures with various component ratios and irradiated on a Si(1 0 0) target surface. When the cluster has Xe 1000 core covered with 1000 Ar atoms, and impacts at a total of 20 keV, the core Xe cluster penetrates into the deep area, and a crater with a conical shape is left on the target. On the other hand, in the case of a cluster with the opposite structure, Ar 1000 core covered with 1000 Xe atoms, the cluster stops at a shallow area of the target. The incident cluster atoms are mixed and tend to spread in a lateral direction, which results in a square shaped crater with a shallower hole and wider opening. The MD simulations suggest that large cluster impacts cause different irradiation effects by changing the structure, even if the component ratio is the same. © 2011 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.nimb.2011.08.061

Depth profiling analysis of damaged arginine films with Ar cluster ion beams 査読有り

Matsuo, J; Ichiki, K; Yamamoto, Y; Seki, T; Aoki, T

SURFACE AND INTERFACE ANALYSIS 44 巻 ( 6 ) 頁： 729 - 731 2012年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Surface and Interface Analysis

Ar cluster ion beams provide unique opportunities for organic material analysis. SIMS with Ar cluster ion beams have been utilized for thin films of biomaterials and organic semiconductor multilayers. No degradation in SIMS spectra was found after sputtering with Ar cluster ion beams. In addition, a damage layer formed with ion irradiation of monomer Ga at a dose of 1×10 14 ions/cm 2 was removed with an Ar cluster beam without additional damage being created. The structure and depth of damage induced with monomer ions can be evaluated with Ar cluster SIMS. The measured thickness of the damaged layer is very close to the value calculated with TRIM. These results indicate that damage in organic materials introduced with energetic ions can be evaluated with this technique. Copyright © 2012 John Wiley & Sons, Ltd. Copyright © 2012 John Wiley & Sons, Ltd.

DOI： 10.1002/sia.4856

Etching of metallic materials with Cl<sub>2</sub> gas cluster ion beam 査読有り

Seki, T; Aoki, T; Matsuo, J

SURFACE & COATINGS TECHNOLOGY 206 巻 ( 5 ) 頁： 789 - 791 2011年11月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Surface and Coatings Technology

Cluster ion beam processes exhibit high rate sputtering with low damage, and in particular, extremely high sputtering rates are expected using reactive cluster ion beams. Si could be sputtered at extremely high rates using reactive cluster ion beams, such as SF6, Cl2, CF4, CHF3, and CH2F2. However, processing of metallic materials with reactive cluster ion beams has not been studied yet. It was expected that high-speed etching of metallic materials can be realized with Cl2 cluster ion irradiation, because such a beam would reactively sputter these materials. We generated a Cl2 cluster ion beam and investigated the etching characteristics of various metallic materials, such as Ni and Al films, under this irradiation. The size of the Cl2 cluster, as measured with a time-of-flight (TOF) system, was about 1400 molecules. The sputtering yield for each metal was more than 10 times higher than that obtained with Ar cluster ions, showing that Cl2 cluster ion irradiation reactively sputtered the metallic materials. These results indicated that Cl2 cluster ion irradiation was suitable for high-speed processing of metallic materials. © 2011 Elsevier B.V.

DOI： 10.1016/j.surfcoat.2011.04.054

Low-damage milling of an amino acid thin film with cluster ion beam 査読有り

Hada, M; Ibuki, S; Hontani, Y; Yamamoto, Y; Ichiki, K; Ninomiya, S; Seki, T; Aoki, T; Matsuo, J

JOURNAL OF APPLIED PHYSICS 110 巻 ( 9 ) 2011年11月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Applied Physics

In this work, we characterized the surface damage layer and sputtering yield of polycrystalline L-leucine films before and after irradiation with Ar cluster or monomer ion beams with x ray photoelectron spectroscopy and ellipsometry. Irradiation with Ar monomer ion beams induced heavy damage on the surface of L-leucine films, such as bond breaking and carbonization. In contrast, no significant surface damage was observed in the films irradiated with Ar cluster ion beams. The sputtering yield of L-leucine decreased dramatically with increasing fluence of monomer Ar ions and approached the value of the sputtering yield of graphite; but under irradiation with Ar cluster ion beams, the sputtering yield remained constant with fluence. The differences in sputtering yield behavior were explained in relation with the surface damage layer on organic materials. Thus, cluster ion beams could potentially be used to mill down biological materials without significant damage on the surface and could contribute to various applications in the analysis and processing of life matter. © 2011 American Institute of Physics.

DOI： 10.1063/1.3658220

Highly sensitive molecular detection with swift heavy ions 査読有り

Wakamatsu, Y; Yamada, H; Ninomiya, S; Jones, BN; Seki, T; Aoki, T; Webb, R; Matsuo, J

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 269 巻 ( 20 ) 頁： 2251 - 2253 2011年10月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Various imaging techniques using microbeam have been applied in biology. Secondary ion mass spectrometry (SIMS) is one of the prominent tools for biological imaging; SIMS can provide data on molecular distribution in biological samples smaller than 1 μm. However, conventional SIMS has only low sensitivity for molecular ions; therefore there is a need for beams of more sensitive primary ions. Plasma desorption mass spectrometry (PDMS) is a method using high energy fission fragments from excitation of a 252Cf source, and it allows ionization of large molecules (typically up to 20 kDa) due to the dense electronic excitation. Although PDMS is not in use today because of the development of soft ionization methods, ionization induced by high energy ion collision still remains the only method which combines high spatial resolution and sensitive detection of large molecules. In this work, the secondary ion yield of amino acid and phospholipid was measured for 6 MeV Cu4+. The yields were compared to bismuth cluster ions, which achieve relatively high yield. It was confirmed that the swift heavy ion has a couple of hundred times higher yield for large molecules than bismuth cluster ions.

DOI： 10.1016/j.nimb.2011.02.069

The effects of cluster size on sputtering and surface smoothing of PMMA with gas cluster ion beams 査読有り国際誌

Kazuya Ichiki, Satoshi Ninomiya, Toshio Seki, Takaaki Aoki, Jiro Matsuo

Transactions of the Materials Research Society of Japan 36 巻 ( 3 ) 頁： 309 - 312 2011年9月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：The Materials Research Society of Japan

We investigated the sputtering rate and surface morphology of polymethylmethacrylate (PMMA) samples bombarded with Ar cluster ion beam with selected energy of 12.5 eV/atom. The incident cluster energy range was 10–60 keV/ion. The incident cluster ion was selected before irradiation by using the time-of-flight (TOF) method. Both the sputtering rates and the average surface roughness increased rapidly with increasing incident cluster size under bombardment with small cluster ion. Under bombardment with large cluster ion, the average surface roughness does not increase rapidly, although sputtering rates increased nonlinearly. It suggests that a cluster ion beam with large size would be effective for high speed etching without roughing the surface.

DOI： 10.14723/tmrsj.36.309

Molecular dynamics simulations of large fluorine cluster impact on silicon with supersonic velocity 査読有り

Aoki, T; Seki, T; Matsuo, J

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 269 巻 ( 14 ) 頁： 1582 - 1585 2011年7月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

The etching process by very large reactive gas cluster impact was investigated by molecular dynamics (MD) simulations. Fluorine-molecule clusters with the size up to 100,000 atoms (50,000 F2 molecules) were irradiated on silicon (1 0 0) targets at supersonic velocity regime (0.1-1 eV/atom, 1.0-3.2 km/s). The MD simulations revealed that the existence of threshold energy-per-atom around 0.3 eV/atom (1.75 km/s) to cause surface deformation and enhancement of Si desorption. When the incident energy-per-atom is less than the threshold, the incident cluster breaks up itself on the target without surface deformation. The fluorine molecules in the cluster spread in the lateral direction along the target surface, and some part of them decompose and adsorbs on the target to form silicon fluoride composites. On the other hand, the clusters penetrate the surface of silicon target when the energy-per-atom is larger than 0.3 eV/atom. In these collisional processes, the target surface is deformed to create shallow crater shape. The incident fluorine molecules are preferentially concentrated at the bottom of the crater, which resulted in high desorption yield of silicon as in the form of SiF2, SiF3 and SiF4. © 2010 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.nimb.2010.12.013

Analysis of organic semiconductor multilayers with Ar cluster secondary ion mass spectrometry 査読有り

Ninomiya, S; Ichiki, K; Yamada, H; Nakata, Y; Seki, T; Aoki, T; Matsuo, J

SURFACE AND INTERFACE ANALYSIS 43 巻 ( 1-2 ) 頁： 95 - 98 2011年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Surface and Interface Analysis

The demand for direct analytical techniques for characterization and damage evaluation of organic devices has increased dramatically in recent years, along with an increase in the importance of these devices. In this study, we demonstrate direct analysis of model structures for organic light emitting diode (OLED) devices by using SIMS with large Ar cluster ion beams. We prepared single and multilayer films of organic semiconductor materials by vacuum evaporation and analyzed their surfaces with time-of-flight secondary ion mass spectrometry (ToF-SIMS). Under bombardment with large Ar cluster ions, the predominant species observed were molecular ions from the organic materials, while small fragment ions were strongly suppressed. Moreover, the multilayer films were depth profiled with Ar cluster ion beams, and the interfaces between the organic layers could be clearly distinguished. These results show the promising potential of large Ar cluster ion beams for direct analysis of real organic semiconductor devices. Copyright © 2010 John Wiley & Sons, Ltd.

DOI： 10.1002/sia.3587

MeV-energy probe SIMS imaging of major components in washed and fractured animal cells 査読有り

Yamada, H; Nakata, Y; Ninomiya, S; Seki, T; Aoki, T; Tamura, J; Matsuo, J

SURFACE AND INTERFACE ANALYSIS 43 巻 ( 1-2 ) 頁： 363 - 366 2011年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Surface and Interface Analysis

Molecular images of pretreated animal cells were measured by secondary ion mass spectrometry (SIMS) with MeV-energy ion beam. SIMS analysis was performed for cell surfaces washed with buffers not only at high vacuum, but also at several tens Pa by using an orthogonal acceleration time of flight mass spectrometer (oaTOFMS) system. Moreover, molecular images of major components from washed and freeze fractured cells were obtained using MeV-energy probe SIMS. Copyright © 2010 John Wiley & Sons, Ltd.

DOI： 10.1002/sia.3408

The effect of incident energy on molecular depth profiling of polymers with large Ar cluster ion beams 査読有り

Ninomiya, S; Ichiki, K; Yamada, H; Nakata, Y; Seki, T; Aoki, T; Matsuo, J

SURFACE AND INTERFACE ANALYSIS 43 巻 ( 1-2 ) 頁： 221 - 224 2011年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Surface and Interface Analysis

In this study, we evaluated the damage caused by large Ar cluster ion irradiation on polymeric materials, and demonstrated a technique for molecular depth profiling of polymer films. The surface chemical states of the polymers were analyzed with XPS. The chemical states of the polymethyl methacrylate (PMMA) sample etched with Ar monomer ion beams differed significantly from those of the unirradiated sample, but were preserved for the sample etched with Ar cluster ion beams. SIMS depth profiling of the PMMA and polystyrene (PS) films were also carried out by using large Ar cluster ion beams at incident energies between 5.5 and 13 keV, and the effects of incident energy on damage accumulation and depth resolution were investigated. The ratios of the signal intensity at zero fluence to the signal intensity at steady state decreased with increasing incident energy, whereas the depth resolution was little affected by incident energy. Copyright © 2010 John Wiley & Sons, Ltd.

DOI： 10.1002/sia.3656

Surface morphology of PMMA surfaces bombarded with size-selected gas cluster ion beams 査読有り

Ichiki, K; Ninomiya, S; Nakata, Y; Yamada, H; Seki, T; Aoki, T; Matsuo, J

SURFACE AND INTERFACE ANALYSIS 43 巻 ( 1-2 ) 頁： 120 - 122 2011年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Surface and Interface Analysis

The surface morphology and sputtering rate of polymethylmethacrylate (PMMA) samples bombarded with size-selected Ar cluster ion beam (1000-16 000 atoms/cluster) was investigated. The incident cluster ion size was selected before irradiation by using the time-of-flight (TOF) method. The sputtering rates decreased with increasing incident cluster size at constant total energy. The average surface roughness values measured by AFM after 25 nm etching with 20 keV Ar1000+ and Ar16 000+ were 4.0 ± 0.4 and 0.78 ± 0.09 nm, respectively. Thus, small clusters would be effective for high-speed etching, and large clusters would be suitable for low-damage etching. Copyright © 2010 John Wiley & Sons, Ltd.

DOI： 10.1002/sia.3444

Using ellipsometry for the evaluation of surface damage and sputtering yield in organic films with irradiation of argon cluster ion beams 査読有り

Hada, M; Ninomiya, S; Seki, T; Aoki, T; Matsuo, J

SURFACE AND INTERFACE ANALYSIS 43 巻 ( 1-2 ) 頁： 84 - 87 2011年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Surface and Interface Analysis

The film thickness and surface damage layer of vapor-deposited L-leucine amino acid films irradiated with Ar cluster ion beams were characterized by PSCRA ellipsometry. The damaged layer on the surface of the L-leucine film irradiated with Ar cluster ion beam was quite thin, less than 1 nm in thickness. In contrast, films irradiated with Ar monomer ion beam have changed into totally different films. The ellipsometry method also allowed accurate measurements of the sputtering yield from the L-leucine film irradiated with Ar cluster ion beams at nm-order resolution. These results suggested that with proper analysis, the optical method of ellipsometry enables estimation of the surface damage layer and measurement of sputtering yield of organic films irradiated with cluster ion beams. Copyright © 2010 John Wiley & Sons, Ltd.

DOI： 10.1002/sia.3452

Evaluation of damage depth on arginine films with molecular depth profiling by Ar cluster ion beam

Yamamoto Yasuyuki, Ichiki Kazuya, Seki Toshio, Aoki Takaaki, Matsuo Jiro

Transactions of the Materials Research Society of Japan 36 巻 ( 3 ) 頁： 313 - 316 2011年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：The Materials Research Society of Japan

Ion-induced damage on organic materials has been evaluated with secondary ion mass spectrometry (SIMS). However, conventional sputter beams, such as SF<sub>5</sub><sup>+</sup>, C<sub>60</sub><sup>+</sup> cannot etch the organic materials without inducing damage, and it is difficult to evaluate the depth distribution of the damage in these materials. Large gas cluster ion can etch organic materials without damage, and in this study the damaged layer thickness was evaluated by molecular depth profiling with Ar cluster ion beam. Arginine films were irradiated with 10 keV Ga<sup>+</sup> at a dose of 1.0 × 10<sup>14</sup> ions/cm<sup>2</sup> with the aim of forming a damaged layer on the surface. The chemical structure of arginine was seriously damaged, as indicated by the non-detection of protonated arginine molecular ions after Ga<sup>+</sup> ions irradiation. The peak intensity of the protonated arginine ion increased with increasing sputtering depth and saturated at the depth of about 30 nm. This value agreed with the projection range of the Ga<sup>+</sup> ion indicating that the depth of the ion-induced damage was the same as projection range of the ion. Ion-induced damage layer thickness on arginine films were accurately evaluated by molecular depth profiling with Ar cluster ion beam.

DOI： 10.14723/tmrsj.36.313

Processing Techniques of Biomaterials: Using Gas Cluster Ion Beam for Imaging Mass Spectrometry 査読有り国際誌

H Yamada, K Ichiki, Y Nakata, S Ninomiya, Toshio Seki, Takaaki Aoki, Jiro Matsuo

Transactions of the Materials Research Society of Japan 35 巻 ( 4 ) 頁： 793 - 796 2010年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：The Materials Research Society of Japan

We investigated secondary ion mass spectrometry (SIMS) for cellular imaging with high spatial resolution. Cellular level imaging would require nanoscale processing techniques for removal of contamination from cell surfaces and exposing the inner matter of cells. In this study, we applied gas cluster ion beams to the etching of biological samples. Molecular ions were detected with high-intensity from cholesterol samples etched with Ar cluster ions. Additionally, the intensity of secondary molecular ions with gas cluster ion irradiation was compared to that with Au<sub>3</sub><sup>+</sup> or C<sub>60</sub><sup>+</sup> beam irradiation and we demonstrated the advantage of using gas cluster ions as etching beams for biological samples with low damage. Finally, we performed etching of animal cells with Ar cluster ions and SIMS analysis of the etched cells. We demonstrated that the cell surfaces were etched with low damage by using gas cluster ion beam.

DOI： 10.14723/tmrsj.35.793

Sputtering Properties of Si by Size-Selected Ar Gas Cluster Ion Beam 査読有り国際誌

K Ichiki, S Ninomiya, Toshio Seki, Takaaki Aoki, Jiro Matsuo

Transactions of the Materials Research Society of Japan 35 巻 ( 4 ) 頁： 789 - 792 2010年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：The Materials Research Society of Japan

Large gas cluster ion beam technology answers expectations in the field of material modification, because it provides unique capabilities, such as atomic-scale surface smoothing, shallow implantation and high sputtering yield. The relationship between incident cluster size and irradiation effects observed with large gas cluster ion beam is not yet clearly understood, and in this work we used size-selected Ar cluster ion beam to study the effects of incident energy-per-atom and cluster size on sputtering and secondary ion emission. Incident Ar cluster ions were size-selected by using the time-of-flight (TOF) method. It was found that the secondary ion yields decreased more rapidly with decreasing incident energy-per-atom and that the threshold energy-per-atom for sputtering of Si and Si<sup>+</sup> were different, because the ionization energy of Si was higher than the surface binding energy of Si. It indicates that cluster ion irradiation sputtered only neutral Si from the surface by under the specific conditions.

DOI： 10.14723/tmrsj.35.789

SIMS Depth Profiling of Organic Materials with Ar Cluster Ion Beam 査読有り国際誌

Satoshi Ninomiya, Kazuya Ichiki, Hideaki Yamada, Yoshihiko Nakata, Toshio Seki, Takaaki Aoki, Jiro Matsuo

Transactions of the Materials Research Society of Japan 35 巻 ( 4 ) 頁： 785 - 788 2010年12月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：The Materials Research Society of Japan

Depth profiling has been rarely used with secondary ion mass spectrometry (SIMS) of organic materials, because the primary keV atomic ions produce weak signals for large molecules and often damage them during the etching process. In previous studies, we have found extremely low-damage secondary ion emission from organic materials bombarded with large Ar cluster ions, and proposed to use large gas cluster ions as primary ions for SIMS. In this study, secondary ions were measured with a linear type time-of-flight (TOF) technique, and the application of large Ar cluster ion beams to molecular depth profiling of organic films is demonstrated. The intensities of molecular ions were kept constant, though the primary ion beam fluence exceeded the static SIMS limit. These results indicate that large Ar cluster ion beams could be used as powerful tools for SIMS depth profiling.

DOI： 10.14723/tmrsj.35.785

ガスクラスタイオンビームによるナノ加工技術査読有り国際誌

松尾二郎, 北川晃幸, 瀬木利夫, 青木学聡

トライボロジスト 55 巻 ( 11 ) 頁： 776 - 782 2010年11月

SIMS with highly excited primary beams for molecular depth profiling and imaging of organic and biological materials 査読有り

Matsuo, J; Ninomiya, S; Yamada, H; Ichiki, K; Wakamatsu, Y; Hada, M; Seki, T; Aoki, T

SURFACE AND INTERFACE ANALYSIS 42 巻 ( 10-11 ) 頁： 1612 - 1615 2010年10月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Surface and Interface Analysis

Recent developments in SIMS with both Ar cluster ions and swift heavy ions are presented. With these primary beams, the analysis of organic semiconductors and animal cells shows that one of the key factors to realizing the SIMS analysis of organic materials is high-energy deposition near the surface. Molecular depth profiling and images of organic materials were demonstrated by using SIMS. © 2010 John Wiley & Sons, Ltd.

DOI： 10.1002/sia.3585

MeV-energy probe SIMS imaging of major components in animal cells etched using large gas cluster ions 査読有り

Yamada, H; Ichiki, K; Nakata, Y; Ninomiya, S; Seki, T; Aoki, T; Matsuo, J

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 268 巻 ( 11-12 ) 頁： 1736 - 1740 2010年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Molecular imaging of animal cells was successfully obtained by using the technique of MeV-energy probe secondary ion mass spectrometry (MeV-SIMS) and sample etching with Ar cluster ion beam. In order to indicate benefits of using Ar cluster beam for etching biomaterials, cholesterol and phospholipids were etched with Ar cluster ions and SIMS measurements for the before and after etching samples were performed. Moreover, secondary ion images of the animal cells etched with Ar cluster ions were acquired by using MeV-energy ion beam as a probe. © 2010 Elsevier B.V. All rights reserved.

DOI： 10.1016/j.nimb.2010.02.038

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