PhD (Engineering) （ 2025   Nagoya University ） 

Selective etching of GaN over AlGaN through low-damage AlGaN surface processing at high temperatures Reviewed Open Access

Shohei Nakamura, Atsushi Tanide, Kenji Ishikawa

Journal of Applied Physics   Vol. 138   page： 055701   2025.7

Rate-controlled cycle etching of GaN by cycle exposure to BCl₃ and F₂-added Ar plasma at a substrate temperature of 400 °C Reviewed

Shohei Nakamura, Atsushi Tanide, Soichi Nadahara, Kenji Ishikawa, Masaru Hori

Journal of Vacuum Science & Technology B   Vol. 43   page： 022202   2025.1

GaN damage-free cyclic etching by sequential exposure to Cl₂ plasma and Ar plasma with low Ar⁺-ion energy at substrate temperature of 400 °C Reviewed

Shohei Nakamura, Atsushi Tanide, Takahiro Kimura, Soichi Nadahara, Kenji Ishikawa, Osamu Oda, Masaru Hori

Journal of Applied Physics   Vol. 133   page： 043302   2023.1