Updated on 2021/11/26

写真a

 
NAGASEKI Kazuya
 
Organization
Center for Low-temperature Plasma Sciences (cLPS) Designated professor
Title
Designated professor

Degree 1

  1. 博士(工学) （ 1995.3   山梨大学 ） 

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Research Interests 1

  1. 半導体製造用プラズマエッチング装置およびプロセスの研究開発

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Research Areas 1

  1. Energy Engineering / Applied plasma science

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Education 1

  1. University of Yamanashi

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Professional Memberships 1

  1. 応用物理学会

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Papers 10

  1. Positive Ions in RF Discharge Plasmas of C4F8/Ar and C4F8/O2 Mixtures

    Jpn J Appl Phys. Pt. 1, Regular papers & short notes   Vol. 37 ( 10 ) page： 5730 - 5734   1998.10

  2. Positive Ions in C 4F 8 RF Discharge in a Planar Diode

    Jpn J Appl Phys. Pt. 1, Regular papers & short notes   Vol. 36 ( 8 ) page： 5296 - 5299   1997.8

  3. Characteristics of Parallel-Plate RF Discharges in C 4F 8 Gas and C 4F 8/O 2 Mixtures

    Jpn J Appl Phys. Pt. 1, Regular papers & short notes   Vol. 36 ( 8 ) page： 5286 - 5289   1997.8

  4. Ionic Species in 13.56 MHz Discharges in CF 4 Gas and Mixtures of It with Ar and O 2

    Jpn J Appl Phys. Pt. 1, Regular papers & short notes   Vol. 37 ( 7 ) page： 4648 - 4650   1997.7

  5. Positive and Negative Ions in RF Plasmas of SF 6/N 2 and SF 6/Ar Mixtures in a Planar Diode

    Jpn J Appl Phys. Pt. 1, Regular papers & short notes   Vol. 35 ( 7 ) page： 847 - 853   1997.2

  6. Positive Ions in RF Discharge Plasma of CF 4 Gas in a Planar Diode

    Jpn J Appl Phys. Pt. 1, Regular papers & short notes   Vol. 35 ( 7 ) page： 4081 - 4082   1996.7

  7. Negative Ions in 13.56 MHz Discharge of SF6 Gas in a Planar Diode

    Jpn J Apl Phys. Pt. 2, Letters   Vol. 34 ( 7 ) page： L852 - L855   1995.7

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  8. Mass Spectrometry of Discharge Products at 13.56 MHz in SF6 Gas

    Jpn J Appl Phys   Vol. 33 ( ７ ) page： 4348 - 4352   1994.7

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  9. Mass Spectrometric Observation of Decomposition Products SFx (x=1, 2) in SF6 Discharge at 13.56 MHz

    Jpn J Appl Phys   Vol. 32 ( ２ ) page： 967 - 968   1993.2

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  10. Dual-Frequency Superimposed RF Capacitive-Coupled Plasma Etch Process

    Jpn J Appl Phys   Vol. 44 ( 8 ) page： 6241 - 6244   2005.8

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    Authorship：Last author  

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Books 1

  1. 3D Interconnect 向けSiエッチング技術

    阿部 祐一　 丸山 幸児　 平山 祐介　 永関 一也

    電気学会研究会資料. EFM, 電子材料研究会  2008.5 

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    Responsible for pages：9-12  

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Presentations 4

  1. High Rate Si Etching Process Invited

    K.Nagaseki

    SEMICON Japan  2005.12.8 

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    Event date： 2005.12

    Presentation type：Oral presentation (invited, special)  

  2. Approach for Environmental Standard with Etch Tools

    K.Nagaseki

    Dry Process Symposium  2000.9.26 

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    Event date： 2000.9

    Presentation type：Oral presentation (general)  

  3. High Rate Deep Si Etching

    I.Sakai

    Dry Process Symposium  2001.11.20 

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    Event date： 2001.11

    Presentation type：Oral presentation (general)  

  4. CHARACTERIZATION OF SAC ETCHING IN GAS CIRCULATION RIE

    I.Sakai

    Dry Process Symposium  2000.9.27 

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    Event date： 2000.9

    Presentation type：Oral presentation (general)  

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