Updated on 2021/10/27

写真a

 
TOMITA Kazuyoshi
 
Organization
Institute of Materials and Systems for Sustainability TOYOTA CENTRAL R&D LABS GaN Power Device Industry-Academia Collaborative Chair Designated professor
Title
Designated professor

Degree 1

  1. 博士(工学) ( 2009.3   名古屋大学 ) 

 

Papers 15

  1. Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p-n junctions Reviewed International journal

    Shoji Tomoyuki, Narita Tetsuo, Nagasato Yoshitaka, Kanechika Masakazu, Kondo Takeshi, Uesugi Tsutomu, Tomita Kazuyoshi, Ikeda Satoshi, Mori Tomohiko, Yamaguchi Satoshi, Kimoto Yasuji, Kojima Jun, Suda Jun

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 11 )   2021.11

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:APPLIED PHYSICS EXPRESS  

    DOI: 10.35848/1882-0786/ac2a03

    Web of Science

  2. Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy Reviewed International journal

    Kanegae Kazutaka, Narita Tetsuo, Tomita Kazuyoshi, Kachi Tetsu, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 9 )   2021.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Applied Physics Express  

    The ratio of the photoionization cross sections (σo/n σ o/p) of carbon substituting at the nitrogen site [CN (0/-)] in n-type GaN, which is detected as a hole trap H1 (EV + 0.85 eV) under sub-bandgap-light irradiation (390 nm), is determined with isothermal capacitance transient spectroscopy (ICTS). The current-injection ICTS and the sub-bandgap-light-excited ICTS were compared for the same p+-n junction diode, whereby the hole occupancy ratio (fT) was obtained. Analysis of the dependence of fT on the temperature gave σo/n σ o/p of 3.0 was then used to estimate the charge state of CN (0/-) under sub-bandgap-light irradiation.

    DOI: 10.35848/1882-0786/ac16ba

    Web of Science

    Scopus

  3. Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress Reviewed International journal

    Narita Tetsuo, Nagasato Yoshitaka, Kanechika Masakazu, Kondo Takeshi, Uesugi Tsutomu, Tomita Kazuyoshi, Ikeda Satoshi, Yamaguchi Satoshi, Kimoto Yasuji, Kosaki Masayoshi, Oka Tohru, Kojima Jun, Suda Jun

    APPLIED PHYSICS LETTERS   Vol. 118 ( 25 )   2021.6

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Applied Physics Letters  

    Reliability tests involving the application of high electrical stresses were employed to assess GaN-based vertical p-n junctions fabricated on freestanding GaN substrates with threading dislocation densities less than 104 cm−2. Electric field crowding at the device edges was eliminated by employing a shallow bevel mesa structure, thus allowing an evaluation of the reliability of the internal p-n junctions. The p-n diodes exhibited reproducible avalanche breakdown characteristics over the temperature range of 25-175 °C. No degradation was observed even during tests in which the devices were held under a reverse bias near the breakdown voltage. Despite this high degree of reliability in response to reverse bias stress, a small number of diodes were degraded during continuous forward current tests, although the majority of diodes remained unchanged. The reverse leakage current exhibited by degraded diodes was increased with an increase in the forward current density within the range of 50-500 A/cm2, while the breakdown voltages were unchanged in response to current stress. The leakage level increased exponentially with an increase in the total amount of injected carriers but eventually plateaued. In the degraded p-n diode, a luminous point in an emission microscope corresponded to one of the threading dislocations observed in the synchrotron x-ray topography, indicating that a specific dislocation played as a leakage path after injecting carriers.

    DOI: 10.1063/5.0053139

    Web of Science

    Scopus

  4. Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers Reviewed International journal

    Kato Masashi, Asada Takato, Maeda Takuto, Ito Kenji, Tomita Kazuyoshi, Narita Tetsuo, Kachi Tetsu

    JOURNAL OF APPLIED PHYSICS   Vol. 129 ( 11 )   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Journal of Applied Physics  

    N-type GaN epitaxial layers grown via metal organic vapor-phase epitaxy typically exhibit a yellow luminescence (YL) band owing to carbon-related deep levels in the photoluminescence spectra. The decay of YL after pulse excitation involves a long time constant (∼0.2 ms at room temperature), whereas microwave photoconductivity decay (μ-PCD) curves show the corresponding component of the time constant. To clarify the origin of the long decay time, the temperature-dependent time constants of YL decay and μ-PCD curves are analyzed using a numerical model based on rate equations for trapping and emission through a deep level. The characteristics of the decays are well reproduced by a recombination model using a hole trap H1 at an energy of EV + 0.88 eV because of the acceptor-like state of carbon on a nitrogen site (CN) whose electron capture cross section (σn) is estimated to be 3 × 10-21 cm2. The slow decay in μ-PCD signals indicates that the electrons before being captured to H1 traps are free electrons in the conduction band. These findings indicate that the slow recombination process through CN results in tail currents in the turn-off switching periods of devices.

    DOI: 10.1063/5.0041287

    Web of Science

    Scopus

  5. Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors Reviewed International journal

    Ito Kenji, Tomita Kazuyoshi, Kikuta Daigo, Horita Masahiro, Narita Tetsuo

    JOURNAL OF APPLIED PHYSICS   Vol. 129 ( 8 )   2021.2

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Journal of Applied Physics  

    The factors limiting channel mobility in AlSiO/p-type GaN-based metal-oxide-semiconductor field-effect transistors (MOSFETs) were systematically investigated. MOSFETs with various thin interfacial layers (ILs) between Al0.78Si0.22Oy films and Mg-doped GaN layers were prepared and found to exhibit different channel mobilities. The maximum effective mobility showed a significant correlation with the threshold voltage (Vt) and the hysteresis (ΔVt) in the transfer characteristics of these devices, such that the mobility decreased with increasing Vt and ΔVt. This effect can be explained by electron capture in and emission from border traps situated near the conduction band minimum for GaN. The insertion of a 3-nm-thick SiO2 IL drastically enhanced the effective mobility and simultaneously reduced the ΔVt value. Hall effect measurements with an applied gate voltage were used to determine the mobility of free electrons while excluding electrons captured in the border traps. The Hall effect mobility was much higher than the effective mobility, indicating that mobility was in fact reduced by the capture of electrons by the border traps. The ratio of electrons captured by border traps to the overall electrons induced by a gate bias was greatly lowered in a MOSFET incorporating a SiO2 IL. When a high vertical electric field of approximately 1 MV/cm was present in the device channel, the Hall effect mobility was slightly increased following the insertion of an IL. These results suggest that the IL reduced the interfacial roughness and/or affected the screening out of scattering due to potential fluctuations of the AlSiO.

    DOI: 10.1063/5.0040700

    Web of Science

    Scopus

  6. Why do electron traps atE(C)-0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers? Reviewed International journal

    Narita Tetsuo, Horita Masahiro, Tomita Kazuyoshi, Kachi Tetsu, Suda Jun

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 10 )   2020.10

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:JAPANESE JOURNAL OF APPLIED PHYSICS  

    Web of Science

  7. Progress on and challenges of p-type formation for GaN power devices Invited Reviewed International coauthorship International journal

    Narita Tetsuo, Yoshida Hikaru, Tomita Kazuyoshi, Kataoka Keita, Sakurai Hideki, Horita Masahiro, Bockowski Michal, Ikarashi Nobuyuki, Suda Jun, Kachi Tetsu, Tokuda Yutaka

    JOURNAL OF APPLIED PHYSICS   Vol. 128 ( 9 )   2020.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Journal of Applied Physics  

    The fabrication processes of p-type regions for vertical GaN power devices are investigated. A p-type body layer in a trench gate metal-oxide-semiconductor field-effect transistor requires precise control of the effective acceptor concentration, which is equal to the difference between the Mg acceptor concentration (Na) and the compensating donor concentration (Nd). The carbon atoms incorporated during growth via metalorganic vapor phase epitaxy substitute nitrogen sites (CN) and function as donor sources in a p-type GaN layer. Since interstitial H atoms (H i) also compensate holes, their removal from an Mg-doped layer is crucial. Extended anneals to release H atoms cause the formation of extra hole traps. The p+ capping layer allows effective and rapid removal of H atoms from a p-type body layer owing to the electric field across the p+/p- junction. On the other hand, selective area p-type doping via Mg ion implantation is needed to control the electrical field distribution at the device edge. Ultrahigh-pressure annealing (UHPA) under a nitrogen pressure of 1 GPa enables post-implantation annealing up to 1753 K without thermal decomposition. Cathodoluminescence spectra and Hall-effect measurements suggest that the acceptor activation ratio improves dramatically by annealing above 1673 K as compared to annealing at up to 1573 K. High-temperature UHPA also induces Mg atom diffusion. We demonstrate that vacancy diffusion and the introduction of H atoms from the UHPA ambient play a key role in the redistribution of Mg atoms.

    DOI: 10.1063/5.0022198

    Web of Science

    Scopus

  8. Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN Reviewed International journal

    Kanegae Kazutaka, Narita Tetsuo, Tomita Kazuyoshi, Kachi Tetsu, Horitata Masahiro, Kimoto Tsunenobu, Suda Jun

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( SG )   2020.4

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japanese Journal of Applied Physics  

    A quick method is proposed for measurement of the carbon-related hole trap (H1: +0.87 eV) density in an n-type GaN homoepitaxial layer using dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy. Shorter wavelength (390 nm) light irradiation is employed to cause the hole traps to be in the hole-occupied state. Longer wavelength (660 nm) light irradiation is then used to emit the hole from the trap to the valence band. The photoemission of holes is much quicker than the thermal emission, which reduces the measurement time. The trap density can be calculated from the capacitance transient.

    DOI: 10.35848/1347-4065/ab6863

    Web of Science

    Scopus

  9. Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices Invited Reviewed International journal

    Narita Tetsuo, Tomita Kazuyoshi, Kataoka Keita, Tokuda Yutaka, Kogiso Tatsuya, Yoshida Hikaru, Ikarashi Nobuyuki, Iwata Kenji, Nagao Masahiro, Sawada Naoki, Horita Masahiro, Suda Jun, Kachi Tetsu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( SA )   2020.1

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japanese Journal of Applied Physics  

    Sources of carrier compensation in n-type and p-type GaN layers grown by metalorganic vapor phase epitaxy were quantitatively identified by a combination of Hall-effect analysis and deep level transient spectroscopy. For n-type GaN, we identified three electron compensation sources: Residual carbon atoms likely sitting on nitrogen sites (CN), an electron trap at the energy level of E C-0.6 eV (the E3 trap), and self-compensation appearing with increasing donor concentration. We showed that the CN also play a key role in hole compensation in p-type GaN by forming donor-like charged states. We also investigated the reduction of acceptor concentrations (N a) in highly Mg-doped GaN. Atomic-resolution scanning transmission electron microscopy revealed that electrically inactive Mg atoms of 3/2 atomic layers are segregated at the boundary of pyramidal inversion domains. The N a reduction can be explained by this Mg segregation.

    DOI: 10.7567/1347-4065/ab4610

    Web of Science

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  10. Characterization of hole traps in MOVPE-grown p-type GaN layers using low-frequency capacitance deep-level transient spectroscopy Reviewed International journal

    Kogiso Tatsuya, Narita Tetsuo, Yoshida Hikaru, Tokuda Yutaka, Tomita Kazuyoshi, Kachi Tetsu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC )   2019.6

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japanese Journal of Applied Physics  

    Traps in MOVPE-grown Mg-doped GaN samples composed of p+/p-/n+ structures were investigated using low-frequency capacitance deep-level transient spectroscopy (DLTS). A drop-off in capacitance with decreasing temperature was observed. This is caused by the longer RC time constant of the diode with lower temperature, which is due to a decrease in the number of ionized Mg acceptors (which have a high ionization energy). This limits the use of lower temperatures in DLTS measurements. To extend DLTS to a lower temperature (105 K), DLTS using a capacitance measurement frequency of 1 kHz was applied. Thus, we can quantitatively discuss concentrations of traps with shallow energy levels. We obtained a nearly one-to-one relation between Ha (E V +0.29 eV) and Hd (E V +0.88 eV) in the p-type layer, which strongly supports the theoretical calculation that a carbon on a nitrogen site forms donor-like (Ha) and acceptor-like (Hd) states.

    DOI: 10.7567/1347-4065/ab0408

    Web of Science

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  11. Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer Reviewed

    Iwata Kenji, Narita Tetsuo, Nagao Masahiro, Tomita Kazuyoshi, Kataoka Keita, Kachi Tetsu, Ikarashi Nobuyuki

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 3 )   2019.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Applied Physics Express  

    Pyramidal inversion domains (PIDs) with (0001) bases several nanometers wide are commonly observed in highly Mg-doped GaN epitaxial layers. High-angle annular dark field scanning transmission electron microscopy clarified the PID boundary structure, concluding debate on previously proposed Mg segregation models: Mg atoms segregate to form a single atomic layer at the boundary and substitute 1/4 of Ga atoms in the neighboring Ga layers. We explain that the Mg segregation produces electrically inactive Mg atoms and can be a cause of the free carrier reduction in the highly Mg-doped GaN. The PID formation process during the epitaxial growth is also discussed.

    DOI: 10.7567/1882-0786/ab04f1

    Web of Science

    Scopus

  12. Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures Reviewed International journal

    Narita Tetsuo, Tomita Kazuyoshi, Yamada Shinji, Kachi Tetsu

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 1 )   2019.1

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    This work quantitatively examined lateral diffusion of hydrogen in the (0001) in-plane direction in a Mg-doped p-type GaN layer sandwiched between n-type layers, based on the preparation and annealing of circular mesa structures having different radius values. Capacitance-voltage analyses and secondary ion mass spectrometry confirmed a decrease in the effective acceptor concentration along with an increase in the residual hydrogen concentration with increasing radius values, indicating hydrogen desorption through the sidewall and lateral diffusion. Considering the surface barrier to desorption, we estimated a lateral diffusion coefficient of 7 × 10 -8 cm 2 s -1 at 1123 K, reasonably reproducing the effect of the mesa radius.

    DOI: 10.7567/1882-0786/aaf418

    Web of Science

    Scopus

  13. The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE Reviewed

    Narita Tetsuo, Tomita Kazuyoshi, Tokuda Yutaka, Kogiso Tatsuya, Horita Masahiro, Kachi Tetsu

    JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 21 )   2018.12

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Journal of Applied Physics  

    The role of carbon impurities in p-type GaN layers grown by metalorganic vapor phase epitaxy (MOVPE) was investigated. The lightly Mg-doped (∼1017 cm-3) p-type GaN samples with different carbon concentration [C] were prepared by controlling growth temperature and pressure. Temperature-dependent Hall-effect analyses exhibited an increase in donor concentration with increasing [C]. The low-temperature mobility also decreased with increasing [C], as a result of mobility limitation due to ionized impurity scattering. These results show that carbon atoms in MOVPE-grown p-GaN layers act as ionized donors and cause carrier compensation. Deep-level transient spectroscopy (DLTS) using bias pulses detected the existence of Hd traps (EV +0.88 eV) arising from the 0/-1 charge state of carbon on nitrogen sites (CN). The concentrations of Hd traps closely corresponded to [C] values in p-type GaN layers. Employing low-frequency capacitance DLTS to avoid carrier freeze-out at low temperatures, we newly discovered the Ha trap (EV +0.29 eV) whose concentration was directly proportional to the [C] value. These findings suggest that the Ha trap originates from CN identical to the Hd trap. Based on prior theoretical calculations of energy levels, the Ha trap can reasonably be assigned to a +1/0 donor state of CN. These results strongly suggest that a CN having two different charged states can compensate an electron and a hole in n-type and p-type GaN layers, respectively.

    DOI: 10.1063/1.5057373

    Web of Science

    Scopus

  14. Wide range doping control and defect characterization of GaN layers with various Mg concentrations Reviewed International journal

    Narita Tetsuo, Ikarashi Nobuyuki, Tomita Kazuyoshi, Kataoka Keita, Kachi Tetsu

    JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 16 )   2018.10

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:JOURNAL OF APPLIED PHYSICS  

    DOI: 10.1063/1.5045257

    Web of Science

  15. The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate Reviewed

    Narita Tetsuo, Tokuda Yutaka, Kogiso Tatsuya, Tomita Kazuyoshi, Kachi Tetsu

    JOURNAL OF APPLIED PHYSICS   Vol. 123 ( 16 )   2018.4

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Journal of Applied Physics  

    We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (∼3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

    DOI: 10.1063/1.5010849

    Web of Science

    Scopus

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