Papers - HORITA Masahiro

Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates Invited Reviewed

Horita Masahiro, Suda Jun

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)     page： 86 - 87   2017

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Language：English   Publishing type：Research paper (scientific journal)  

DOI： 10.1109/IMFEDK.2017.7998055

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Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates

Horita Masahiro, Suda Jun

2017 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)     page： 86-87   2017

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Language：English   Publishing type：Research paper (scientific journal)