Faculty Profiles - HORITA Masahiro

Papers - HORITA Masahiro

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Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing Reviewed

Sakurai Hideki, Omori Masato, Yamada Shinji, Furukawa Yukihiro, Suzuki Hideo, Narita Tetsuo, Kataoka Keita, Horita Masahiro, Bockowski Michal, Suda Jun, Kachi Tetsu

Applied Physics Letters Vol. 115 ( 14 ) 2019.9

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination Reviewed

Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

Applied Physics Letters Vol. 115 ( 14 ) 2019.9

Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along the < 11(2)over-bar0 > direction Reviewed

Maeda Takuya, Chi Xilun, Tanaka Hajime, Horita Masahiro, Suda Jun, Kimoto Tsunenobu

Japanese Journal of Applied Physics Vol. 58 ( 9 ) 2019.9

Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy Reviewed

Kanegae Kazutaka, Fujikura Hajime, Otoki Yohei, Konno Taichiro, Yoshida Takehiro, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

Applied Physics Letters Vol. 115 ( 1 ) 2019.7

Shockley-Read-Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p-n(+) junction diodes Reviewed Open Access

Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

Japanese Journal of Applied Physics Vol. 58 ( SC ) 2019.6

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination Reviewed

Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

IEEE Electron Device Letters Vol. 40 ( 6 ) page： 941 - 944 2019.6

Acceptors activation of Mg-ion implanted GaN by ultra-high-pressure annealing Reviewed

Sakurai H.

19th International Workshop on Junction Technology, IWJT 2019 2019

Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect Reviewed

Maeda T.

Proceedings of the 2019 31st International Symposium on Power Semiconductor Devices and ICs Vol. 2019-May page： 59 - 62 2019

Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p-/n+ Junction

Maeda, T; Narita, T; Yamada, S; Kachi, T; Kimoto, T; Horita, M; Suda, J

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2019

The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE

Narita Tetsuo, Tomita Kazuyoshi, Tokuda Yutaka, Kogiso Tatsuya, Horita Masahiro, Kachi Tetsu

JOURNAL OF APPLIED PHYSICS Vol. 124 ( 21 ) 2018.12

Phonon-assisted optical absorption due to Franz-Keldysh effect in 4H-SiC p-n junction diode under high reverse bias voltage

Maeda Takuya, Chi Xilun, Horita Masahiro, Suda Jun, Kimoto Tsunenobu

APPLIED PHYSICS EXPRESS Vol. 11 ( 9 ) 2018.9

Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy

Kazutaka Kanegae, Masahiro Horita, Tsunenobu Kimoto, Jun Suda

Applied Physics Express Vol. 11 ( 7 ) 2018.7

Language：English Publishing type：Research paper (scientific journal) Publisher：Japan Society of Applied Physics

We propose an analysis method for the accurate estimation of the hole trap (H1, EV + 0.85 eV) concentration in n-type GaN via minority carrier transient spectroscopy (MCTS). The proposed method considers both the hole occupation during a filling (current injection) period and the quick carrier recombination via the hole traps near the depletion layer edge immediately after a reverse bias is applied. The reverse bias voltage dependence of the MCTS spectrum indicates that an accurate trap concentration, as well as the hole diffusion length and electron capture cross section of the hole trap, can be determined.

DOI： 10.7567/APEX.11.071002

Web of Science

Scopus

Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies

Kanegae Kazutaka, Kaneko Mitsuaki, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 7 ) 2018.7

Language：English Publishing type：Research paper (scientific journal)

n-Type GaN bulk substrates with carrier concentrations (n) of 1016-1020 cm%3 were characterized by Raman scattering (350-5000 cm-1) and infrared reflectance (400-5000 cm%1) spectroscopies. Experimental spectra were fitted with the curves calculated from the dielectric function and carrier concentration and mobility of the GaN bulk. The obtained values agree well with the values from Hall-effect measurements for n of 1016-1019 cm-3 in Raman scattering measurements and for n of 1018-1020 cm-3 in infrared reflectance measurements.

DOI： 10.7567/JJAP.57.070309

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Scopus

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

Takuya Maeda, Tetsuo Narita, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita, Jun Suda

Applied Physics Letters Vol. 112 ( 25 ) 2018.6

Language：English Publishing type：Research paper (scientific journal) Publisher：American Institute of Physics Inc.

Photocurrent induced by sub-bandgap light absorption due to the Franz-Keldysh effect was observed in GaN p-n junction diodes under a high reverse bias voltage. The photocurrent increased with the reverse bias voltage and the increase was found to be more significant as the wavelength approached the absorption edge of GaN. The photocurrent was calculated with consideration of light absorption induced by the Franz-Keldysh effect in the depletion layer. The calculated curves showed excellent agreement with the experimental curves. The photocurrent also increased with an increase in temperature and this could be quantitatively explained by the red-shift of the GaN absorption edge with the increase in temperature.

DOI： 10.1063/1.5031215

Web of Science

Scopus

Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

Naoki Sawada, Tetsuo Narita, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Masahiro Horita, Tsunenobu Kimoto, Jun Suda

Applied Physics Express Vol. 11 ( 4 ) 2018.4

Language：English Publishing type：Research paper (scientific journal) Publisher：Japan Society of Applied Physics

The source of carrier compensation in metalorganic vapor phase epitaxy (MOVPE)-grown n-type GaN was quantitatively investigated by Halleffect measurement, deep-level transient spectroscopy, and secondary ion mass spectrometry. These analysis techniques revealed that there were at least three different compensation sources. The carrier compensation for samples with donor concentrations below 5 1016 cm3 can be explained by residual carbon and electron trap E3 (EC % 0.6 eV). For samples with higher donor concentrations, we found a proportional relationship between donor concentration and compensating acceptor concentration, which resulted from a third source of compensation. This is possibly due to the self-compensation effect.

DOI： 10.7567/APEX.11.041001

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Scopus

Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination Reviewed

2018 IEEE International Electron Devices Meeting (IEDM) 2018

Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates Invited Reviewed

Horita M., Suda J.

IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai page： 86 - 87 2017.7

Language：English Publisher：IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai

Hall-effect measurements for n-type and p-type GaN with low doping concentration are presented. The GaN layers were grown by metal-organic vapor phase epitaxy on hydride-vapor-phase-epitaxy-grown free-standing GaN substrates. For n-GaN, the origin of acceptor which compensating donor is not only C but also native defects for the Si doping concentration of 1016 cm-3 level. The electron mobility is mainly limited by ionized impurity scattering or polar optical phonon scattering in the temperature less or higher than 200 K, respectively. For p-GaN, lightly Mg doping of mid 1016 cm-3 was achieved, which shows the donor concentration of 3.2×1016 cm-3 and the mobility of 31 cm2/Vs at 300 K.

DOI： 10.1109/IMFEDK.2017.7998055

Scopus

Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors Reviewed

Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Ikenoue, Yukiharu Uraoka

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 5 ) 2017.5

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

The formation of perhydropolysilazane (PHPS)-based SiO2 films by CO2 laser annealing is proposed. Irradiation with a CO2 laser with optimum fluence transformed a prebaked PHPS film into a SiO2 film with uniform composition in the thickness direction. Polycrystalline silicon thin-film transistors (poly-Si TFTs) with a SiO2 film as the gate insulator were fabricated. When the SiO2 film was formed by CO2 laser annealing (CO(2)LA) at the optimum fluence of 20mJ/cm(2), the film had fewer OH groups which was one-twentieth that of the furnace annealed PHPS film and one-hundredth that of the SiO2 film deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethyl orthosilicate (TEOS). The resulting TFTs using PHPS showed a clear transistor operation with a field-effect mobility of 37.9 +/- 1.2 cm(2)V(-1)s(-1), a threshold voltage of 9.8 +/- 0.2 V, and a subthreshold swing of 0.76 +/- 0.02 V/decade. The characteristics of such TFTs were as good as those of a poly-Si TFT with a SiO2 gate insulator prepared by PECVD using TEOS. (C) 2017 The Japan Society of Applied Physics

DOI： 10.7567/JJAP.56.056503

Web of Science

Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode Reviewed

Takuya Maeda, Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto, Tsunenobu Kimoto, Masahiro Horita, Jun Suda

APPLIED PHYSICS EXPRESS Vol. 10 ( 5 ) 2017.5

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

The temperature dependence of barrier height in a Ni/n-GaN Schottky barrier diode fabricated on a GaN homoepitaxial layer was investigated by capacitance-voltage, current-voltage, and internal photoemission measurements in the range of 223-573 K. The barrier height obtained by these methods linearly decreased with increasing temperature. The temperature coefficient was -(1.7-2.3) x 10(-4) eV/K, which is about half of the temperature coefficient of the band gap reported previously. This indicates that the decrease in the barrier height may mainly reflect the shrinkage of the band gap (lowering of the conduction band edge) in GaN with increasing temperature. (C) 2017 The Japan Society of Applied Physics

DOI： 10.7567/APEX.10.051002

Web of Science

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations Reviewed

Masahiro Horita, Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo, Tokio Takahashi, Mitsuaki Shimizu, Jun Suda

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 3 ) 2017.3

Language：English Publishing type：Research paper (scientific journal) Publisher：IOP PUBLISHING LTD

Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 x 10(16)cm(-3) (lightly doped) to 3.8 x 10(19)cm(-3) (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of p-GaN was 4 x 10(6)cm(-2) measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 130 to 450 K. For the lightly doped p-GaN, the acceptor concentration of 7.0 x 10(16)cm(-3) and the donor concentration of 3.2 x 10(16)cm(-3) were obtained, where the compensation ratio was 46%. We also obtained the depth of the Mg acceptor level to be 220meV. The hole mobilities of 86, 31, 14cm(2)V(-1) 1 s(-1) 1 at 200, 300, 400 K, respectively, were observed in the lightly doped p-GaN. (C) 2017 The Japan Society of Applied Physics

DOI： 10.7567/JJAP.56.031001

Web of Science

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Papers - HORITA Masahiro