The Japan Society of Applied Physics

2004.1

International Conference on Solid State Devices and Materials 2023   Program Committee  

2023.1 - 2023.12   

International Conference on Solid State Devices and Materials 2022   Program Committee  

2022.1 - 2022.12   

ワイドギャップ半導体学会   企画幹事  

2021.4 - 2025.3   

International Conference on Materials and Systems for Sustainability   Program Committee  

2021.1 - 2021.12   

第14回窒化物半導体国際会議   プログラム庶務委員  

2019.9 - 2024.3   

International Conference on Solid State Devices and Materials 2019   Steering Committee  

2019.1 - 2019.12   

第37,38回電子材料シンポジウム   実行委員  

2018.10 - 2019.3   

Ultra-high-pressure annealing with a carbon capping layer as an activation method for Mg-ion-implanted GaN Reviewed Open Access

Sumida, K; Sahashi, J; Sierakowski, K; Sochacki, T; Lu, S; Horita, M; Bockowski, M; Kachi, T; Suda, J

APPLIED PHYSICS EXPRESS   Vol. 18 ( 9 )   2025.9

Depth Analyses of Acceptor and Compensating Donor Concentrations in Mg-Ion-Implanted GaN with Ultra-High-Pressure Annealing Reviewed Open Access

Sumida, K; Kataoka, K; Narita, T; Horita, M; Kachi, T; Suda, J

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 262 ( 9 )   2025.9

Vertical GaN Junction Barrier Schottky Diodes Fabricated by Using Channeled Implantation of Mg Ions and Ultrahigh-Pressure Annealing Reviewed

Kitagawa, K; Matys, M; Uesugi, T; Horita, M; Kachi, T; Suda, J

IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 72 ( 8 ) page： 4036 - 4041   2025.8

Estimation of net acceptor activation ratio of channeled-implanted Mg from breakdown voltage analysis of vertical GaN p-n junction diodes with junction termination extension Reviewed

Kitagawa, K; Uesugi, T; Horita, M; Kachi, T; Suda, J

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 64 ( 7 )   2025.7

High Mg activation with suppressed Mg diffusion during ultra-high-pressure annealing via sequential nitrogen-ion implantation in Mg-ion-implanted GaN Reviewed Open Access

Sumida, K; Kataoka, K; Narita, T; Horita, M; Kachi, T; Suda, J

APPLIED PHYSICS EXPRESS   Vol. 18 ( 6 )   2025.6

Free electron mobility limited by fixed charges and trapped electrons in 4H-SiC (1120) and (1100) MOSFETs annealed in NO Reviewed Open Access

Ito, K; Tanaka, H; Horita, M; Suda, J; Kimoto, T

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 64 ( 1 )   2025.1

Analysis of Acceptor Activation and Lateral Diffusion of Channeled-Implanted Mg Atoms in Vertical GaN Junction Barrier Schottky Diodes Reviewed

Kitagawa K., Uesugi T., Horita M., Kachi T., Suda J.

Proceedings of the International Symposium on Power Semiconductor Devices and Ics     page： 341 - 344   2025

Analysis of Acceptor Activation and Lateral Diffusion of Channeled-implanted Mg Atoms in Vertical GaN Junction Barrier Schottky Diodes Reviewed

Kitagawa, K; Uesugi, T; Horita, M; Kachi, T; Suda, J

2025 37TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, ISPSD     page： 341 - 344   2025

Engineered interface charges and traps in GaN MOSFETs providing high channel mobility and <i>E</i>-mode operation Reviewed Open Access

Narita, T; Ito, K; Iguchi, H; Kikuta, D; Kanechika, M; Tomita, K; Iwasaki, S; Kataoka, K; Kano, E; Ikarashi, N; Horita, M; Suda, J; Kachi, T

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 12 )   2024.12

Transport Properties in GaN Metal-Oxide-Semiconductor Field-Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p-Type GaN Gate Stack Reviewed

Narita, T; Ito, K; Tomita, K; Iguchi, H; Iwasaki, S; Horita, M; Kano, E; Ikarashi, N; Kikuta, D

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 18 ( 12 )   2024.12

Impact of Coulomb scattering due to trapped electrons on Hall mobilities in 4H-SiC (11(2)over-bar0) and (1(1)over-bar00) MOSFETs annealed in NO Reviewed

Ito, K; Horita, M; Suda, J; Kimoto, T

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 11 )   2024.11

A distinctive bound exciton line induced by electron-beam irradiation and subsequent annealing of an unintentionally doped GaN layer Reviewed

Iguchi, H; Kataoka, K; Horita, M; Narita, T; Yamada, S; Tomita, K; Kachi, T; Suda, J

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 11 )   2024.11

Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO₂ interfaces with gate oxides annealed in NO or POCl₃ Reviewed Open Access

Ito, K; Tanaka, H; Horita, M; Suda, J; Kimoto, T

APPLIED PHYSICS EXPRESS   Vol. 17 ( 8 )   2024.8

Nitrogen-displacement-related recombination centers generated by electron beam irradiation in n-type and p-type homoepitaxial GaN layers Reviewed Open Access

Endo, M; Horita, M; Suda, J

APPLIED PHYSICS EXPRESS   Vol. 17 ( 1 )   2024.1

High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO₂ interfaces annealed in POCl₃ Reviewed Open Access

Ito, K; Horita, M; Suda, J; Kimoto, T

APPLIED PHYSICS EXPRESS   Vol. 16 ( 7 )   2023.7

Correlation between non-ionizing energy loss and production rate of electron trap at <i>E</i>_C - (0.12-0.20) eV formed in gallium nitride by various types of radiation Reviewed

Aoshima, K; Horita, M; Suda, J

APPLIED PHYSICS LETTERS   Vol. 122 ( 1 )   2023.1

Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AIN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition Reviewed

Ito, K; Narita, T; Iguchi, H; Iwasaki, S; Kikuta, D; Kano, E; Ikarashi, N; Tomita, K; Horita, M; Suda, J

2023 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM     2023

Depth profiling of E C - 0.26 eV electron traps introduced in homoepitaxial n-type GaN by ultra-low-dose Si-ion implantation and subsequent annealing Reviewed

Iguchi H., Horita M., Suda J.

Applied Physics Express   Vol. 15 ( 12 )   2022.12

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing Reviewed Open Access

Kachi, T; Narita, T; Sakurai, H; Matys, M; Kataoka, K; Hirukawa, K; Sumida, K; Horita, M; Ikarashi, N; Sierakowski, K; Bockowski, M; Suda, J

JOURNAL OF APPLIED PHYSICS   Vol. 132 ( 13 )   2022.10

Effective channel mobility in phosphorus-treated 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors with various p-body doping concentrations Reviewed

Ito, K; Horita, M; Suda, J; Kimoto, T

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( 9 )   2022.9

Increase in net donor concentration due to introduction of donor-like defects by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN Reviewed

Iguchi, H; Horita, M; Suda, J

APPLIED PHYSICS EXPRESS   Vol. 15 ( 7 )   2022.7

SiO₂/GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition Reviewed Open Access

Aoshima, K; Taoka, N; Horita, M; Suda, J

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SC )   2022.5

Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN Reviewed

Endo, M; Horita, M; Suda, J

APPLIED PHYSICS LETTERS   Vol. 120 ( 14 )   2022.4

Breakdown Electric Field of GaN p<SUP>+</SUP>-n and p-n<SUP>+</SUP> Junction Diodes With Various Doping Concentrations Reviewed

Maeda, T; Narita, T; Yamada, S; Kachi, T; Kimoto, T; Horita, M; Suda, J

IEEE ELECTRON DEVICE LETTERS   Vol. 43 ( 1 ) page： 96 - 99   2022.1

Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient Reviewed

Sumida, K; Hirukawa, K; Sakurai, H; Sierakowski, K; Horita, M; Bockowski, M; Kachi, T; Suda, J

APPLIED PHYSICS EXPRESS   Vol. 14 ( 12 )   2021.12

Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy Reviewed Open Access

Aoshima, K; Horita, M; Suda, J

AIP ADVANCES   Vol. 11 ( 11 )   2021.11

Effects of the sequential implantation of Mg and N ions into GaN for p-type doping Reviewed

Sakurai, H; Narita, T; Kataoka, K; Hirukawa, K; Sumida, K; Yamada, S; Sierakowski, K; Horita, M; Ikarashi, N; Bockowski, M; Suda, J; Kachi, T

APPLIED PHYSICS EXPRESS   Vol. 14 ( 11 )   2021.11

Investigation of point defects in GaN for the realization of high performance GaN vertical power devices Reviewed

SUDA Jun, HORITA Masahiro, KANEGAE Kazutaka

Oyo Buturi   Vol. 90 ( 10 ) page： 628 - 631   2021.10

Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy Reviewed

Kanegae, K; Okuda, T; Horita, M; Suda, J; Kimoto, T

JOURNAL OF APPLIED PHYSICS   Vol. 130 ( 10 )   2021.9

Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy Reviewed

Kanegae, K; Narita, T; Tomita, K; Kachi, T; Horita, M; Kimoto, T; Suda, J

APPLIED PHYSICS EXPRESS   Vol. 14 ( 9 )   2021.9

Impact ionization coefficients and critical electric field in GaN Reviewed

Maeda, T; Narita, T; Yamada, S; Kachi, T; Kimoto, T; Horita, M; Suda, J

JOURNAL OF APPLIED PHYSICS   Vol. 129 ( 18 )   2021.5

Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing Reviewed

Hirukawa, K; Sumida, K; Sakurai, H; Fujikura, H; Horita, M; Otoki, Y; Sierakowski, K; Bockowski, M; Kachi, T; Suda, J

APPLIED PHYSICS EXPRESS   Vol. 14 ( 5 )   2021.5

Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors Reviewed

Ito Kenji, Tomita Kazuyoshi, Kikuta Daigo, Horita Masahiro, Narita Tetsuo

Journal of Applied Physics   Vol. 129 ( 8 )   2021.2

Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate Reviewed Open Access

Horita Masahiro, Narita Tetsuo, Kachi Tetsu, Suda Jun

Applied Physics Letters   Vol. 118 ( 1 )   2021.1

Impact of gamma-ray irradiation on capacitance-voltage characteristics of Al2O3/GaN MOS diodes with and without post-metallization annealing Reviewed

Aoshima Keito, Horita Masahiro, Suda Jun, Hashizume Tamotsu

Applied Physics Express   Vol. 14 ( 1 )   2021.1

Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes Reviewed

Zhang Ziyi, Kushimoto Maki, Horita Masahiro, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

Applied Physics Letters   Vol. 117 ( 15 )   2020.10

Why do electron traps atE(C)-0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers? Reviewed

Narita Tetsuo, Horita Masahiro, Tomita Kazuyoshi, Kachi Tetsu, Suda Jun

Japanese Journal of Applied Physics   Vol. 59 ( 10 )   2020.10

Progress on and challenges of p-type formation for GaN power devices Reviewed Open Access

Narita Tetsuo, Yoshida Hikaru, Tomita Kazuyoshi, Kataoka Keita, Sakurai Hideki, Horita Masahiro, Bockowski Michal, Ikarashi Nobuyuki, Suda Jun, Kachi Tetsu, Tokuda Yutaka

Journal of Applied Physics   Vol. 128 ( 9 )   2020.9

Impacts of high temperature annealing above 1400°C under N2overpressure to activate acceptors in Mg-implanted GaN Reviewed

Sakurai H., Narita T., Hirukawa K., Yamada S., Koura A., Kataoka K., Horita M., Ikarashi N., Bockowski M., Suda J., Kachi T.

Proceedings of the International Symposium on Power Semiconductor Devices and Ics   Vol. 2020-September   page： 321 - 324   2020.9

Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing Reviewed

Sakurai Hideki, Narita Tetsuo, Omori Masato, Yamada Shinji, Koura Akihiko, Iwinska Malgorzata, Kataoka Keita, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu

Applied Physics Express   Vol. 13 ( 8 )   2020.8

Identification of origin ofE(C)-0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy Reviewed

Horita Masahiro, Narita Tetsuo, Kachi Tetsu, Suda Jun

Applied Physics Express   Vol. 13 ( 7 )   2020.7

Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN Reviewed Open Access

Kanegae K.

Japanese Journal of Applied Physics   Vol. 59 ( SG )   2020.4

Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN and their annealing behavior Reviewed Open Access

Aoshima Keito, Kanegae Kazutaka, Horita Masahiro, Suda Jun

AIP Advances   Vol. 10 ( 4 )   2020.4

Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices Reviewed

Narita Tetsuo, Tomita Kazuyoshi, Kataoka Keita, Tokuda Yutaka, Kogiso Tatsuya, Yoshida Hikaru, Ikarashi Nobuyuki, Iwata Kenji, Nagao Masahiro, Sawada Naoki, Horita Masahiro, Suda Jun, Kachi Tetsu

Japanese Journal of Applied Physics   Vol. 59 ( SA )   2020.1

Impacts of high temperature annealing above 1400 degrees C under N-2 overpressure to activate acceptors in Mg-implanted GaN Reviewed

Sakurai Hideki, Narita Tetsuo, Hirukawa Kazufumi, Yamada Shinji, Koura Akihiko, Kataoka Keita, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu

Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020)     page： 321 - 324   2020

Impact Ionization Coefficients in GaN Measured by Above- and Sub-E<inf>g</inf> Illuminations for p^-/n⁺ Junction Reviewed

Maeda T.

Technical Digest - International Electron Devices Meeting, IEDM   Vol. 2019-December   2019.12

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing Reviewed

Sakurai Hideki, Omori Masato, Yamada Shinji, Furukawa Yukihiro, Suzuki Hideo, Narita Tetsuo, Kataoka Keita, Horita Masahiro, Bockowski Michal, Suda Jun, Kachi Tetsu

Applied Physics Letters   Vol. 115 ( 14 )   2019.9

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination Reviewed

Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

Applied Physics Letters   Vol. 115 ( 14 )   2019.9

Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along the < 11(2)over-bar0 > direction Reviewed

Maeda Takuya, Chi Xilun, Tanaka Hajime, Horita Masahiro, Suda Jun, Kimoto Tsunenobu

Japanese Journal of Applied Physics   Vol. 58 ( 9 )   2019.9

Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy Reviewed

Kanegae Kazutaka, Fujikura Hajime, Otoki Yohei, Konno Taichiro, Yoshida Takehiro, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

Applied Physics Letters   Vol. 115 ( 1 )   2019.7

Shockley-Read-Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p-n(+) junction diodes Reviewed Open Access

Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

Japanese Journal of Applied Physics   Vol. 58 ( SC )   2019.6

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination Reviewed

Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

IEEE Electron Device Letters   Vol. 40 ( 6 ) page： 941 - 944   2019.6

Acceptors activation of Mg-ion implanted GaN by ultra-high-pressure annealing Reviewed

Sakurai H.

19th International Workshop on Junction Technology, IWJT 2019     2019

Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect Reviewed

Maeda T.

Proceedings of the 2019 31st International Symposium on Power Semiconductor Devices and ICs   Vol. 2019-May   page： 59 - 62   2019

Impact Ionization Coefficients in GaN Measured by Above- and Sub-<i>E</i>_g Illuminations for p<SUP>-</SUP>/n<SUP>+</SUP> Junction

Maeda, T; Narita, T; Yamada, S; Kachi, T; Kimoto, T; Horita, M; Suda, J

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     2019

The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE

Narita Tetsuo, Tomita Kazuyoshi, Tokuda Yutaka, Kogiso Tatsuya, Horita Masahiro, Kachi Tetsu

JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 21 )   2018.12

Phonon-assisted optical absorption due to Franz-Keldysh effect in 4H-SiC p-n junction diode under high reverse bias voltage

Maeda Takuya, Chi Xilun, Horita Masahiro, Suda Jun, Kimoto Tsunenobu

APPLIED PHYSICS EXPRESS   Vol. 11 ( 9 )   2018.9

Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy

Kazutaka Kanegae, Masahiro Horita, Tsunenobu Kimoto, Jun Suda

Applied Physics Express   Vol. 11 ( 7 )   2018.7

Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies

Kanegae Kazutaka, Kaneko Mitsuaki, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 7 )   2018.7

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

Takuya Maeda, Tetsuo Narita, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita, Jun Suda

Applied Physics Letters   Vol. 112 ( 25 )   2018.6

Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

Naoki Sawada, Tetsuo Narita, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Masahiro Horita, Tsunenobu Kimoto, Jun Suda

Applied Physics Express   Vol. 11 ( 4 )   2018.4

Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination Reviewed

2018 IEEE International Electron Devices Meeting (IEDM)     2018

Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates Invited Reviewed

Horita M., Suda J.

Imfedk 2017 2017 International Meeting for Future of Electron Devices Kansai     page： 86 - 87   2017.7

Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors Reviewed

Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Ikenoue, Yukiharu Uraoka

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode Reviewed

Takuya Maeda, Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto, Tsunenobu Kimoto, Masahiro Horita, Jun Suda

APPLIED PHYSICS EXPRESS   Vol. 10 ( 5 )   2017.5

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations Reviewed

Masahiro Horita, Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo, Tokio Takahashi, Mitsuaki Shimizu, Jun Suda

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 3 )   2017.3

Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates Invited Reviewed

Horita Masahiro, Suda Jun

2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)     page： 86 - 87   2017

Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates

Horita Masahiro, Suda Jun

2017 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)     page： 86-87   2017

Interfacial atomic site characterization by photoelectron diffraction for 4H-AlN/4H-SiC(11(2)over-bar0) heterojunction Reviewed

Maejima Naoyuki, Horita Masahiro, Matsui Hirosuke, Matsushita Tomohiro, Daimon Hiroshi, Matsui Fumihiko

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 8 )   2016.8

Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation Reviewed

Kulchaisit Chaiyanan, Ishikawa Yasuaki, Fujii Mami N., Yamazaki Haruka, Bermundo Juan Paolo Soria, Ishikawa Satoru, Miyasako Takaaki, Katsui Hiromitsu, Tanaka Kei, Hamada Ken-ichi, Horita Masahiro, Uraoka Yukiharu

JOURNAL OF DISPLAY TECHNOLOGY   Vol. 12 ( 3 )   2016.3

High Pressures Water Vapor Annealing for Atomic-Layer-Deposited Al2O3 on GaN Reviewed

Yoshitugu Koji, Horita Masahiro, Uenuma Mustunori, Ishikawa Yasuaki, Uraoka Yukiharu

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)     page： .   2016

Characterization of N-Type and P-Type GaN Layers Grown on Free-Standing GaN Substrates Reviewed

Suda Jun, Horita Masahiro

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)     page： .   2016

Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing Reviewed

Asubar Joel T., Kobayashi Yohei, Yoshitsugu Koji, Yatabe Zenji, Tokuda Hirokuni, Horita Masahiro, Uraoka Yukiharu, Hashizume Tamotsu, Kuzuhara Masaaki

IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 62 ( 8 ) page： 2423-2428   2015.8

Thermo-stable carbon nanotube-TiO2 nanocompsite as electron highways in dye-sensitized solar cell produced by bio-nano-process Reviewed

Inoue Ippei, Yamauchi Hirofumi, Okamoto Naofumi, Toyoda Kenichi, Horita Masahiro, Ishikawa Yasuaki, Yasueda Hisashi, Uraoka Yukiharu, Yamashita Ichiro

NANOTECHNOLOGY   Vol. 26 ( 28 )   2015.7

Floating gate memory with charge storage dots array formed by Dps protein modified with site-specific binding peptides Reviewed

Kamitake Hiroki, Uenuma Mutsunori, Okamoto Naofumi, Horita Masahiro, Ishikawa Yasuaki, Yamashita Ichro, Uraoka Yukiharu

NANOTECHNOLOGY   Vol. 26 ( 19 )   2015.5

Unseeded Growth of Poly-Crystalline Ge with (111) Surface Orientation on Insulator by Pulsed Green Laser Annealing Reviewed

Horita Masahiro, Takao Toru, Nieda Yoshiaki, Ishikawa Yasuaki, Sasaki Nobuo, Uraoka Yukiharu

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)     page： 237-240   2015

Analysis of self-heating phenomenon in oxide thin-film transistors under pulsed bias voltage Reviewed

Kise Kahori, Tomai Shigekazu, Yamazaki Haruka, Urakawa Satoshi, Yano Koki, Wang Dapeng, Furuta Mamoru, Horita Masahiro, Fujii Mami, Ishikawa Yasuaki, Uraoka Yukiharu

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)     page： 249-251   2015

Analysis of printed silver electrode on amorphous indium gallium zinc oxide Reviewed

Ueoka Yoshihiro, Nishibayashi Takahiro, Ishikawa Yasuaki, Yamazaki Haruka, Osada Yukihiro, Horita Masahiro, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 53 ( 4 )   2014.4

Effect of contact material on amorphous InGaZnO thin-film transistor characteristics Reviewed

Ueoka Yoshihiro, Ishikawa Yasuaki, Bermundo Juan Paolo, Yamazaki Haruka, Urakawa Satoshi, Osada Yukihiro, Horita Masahiro, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 53 ( 3 )   2014.3

4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (11(2)over-bar0) Reviewed

Horita Masahiro, Noborio Masato, Kimoto Tsunenobu, Suda Jun

IEEE ELECTRON DEVICE LETTERS   Vol. 35 ( 3 ) page： 339-341   2014.3

Analysis of heating phenomenon in oxide thin-film transistor under pulse voltage stress Reviewed

Kise Kahori, Fujii Mami, Tomai Shigekazu, Ueoka Yoshihiro, Yamazaki Haruka, Urakawa Satoshi, Yano Koki, Wang Dapeng, Furuta Mamoru, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)     page： .   2014

Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress Reviewed

Ueoka Yoshihiro, Ishikawa Yasuaki, Bermundo Juan Paolo, Yamazaki Haruka, Urakawa Satoshi, Fujii Mami, Horita Masahiro, Uraoka Yukiharu

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 3 ( 9 ) page： Q3001-Q3004   2014

Vapor-Induced Improvements in Field Effect Mobility of Transparent a-IGZO TFTs Reviewed

Fujii Mami N., Ishikawa Yasuaki, Horita Masahiro, Uraoka Yukiharu

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 3 ( 9 ) page： Q3050-Q3053   2014

Reliability of Bottom Gate Amorphous InGaZnO Thin-Film Transistors with Siloxane Passivation Layer Reviewed

Kulchaisit Chaiyanan, Fujii Mami, Ueoka Yoshihiro, Bermundo Juan Paolo, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)     page： .   2014

Crystallization of amorphous Ge thin film using Cu nanoparticle synthesized and delivered by ferritin Reviewed

Uenuma Mutsunori, Zheng Bin, Bundo Kosuke, Horita Masahiro, Ishikawa Yasuaki, Watanabe Heiji, Yamashita Ichiro, Uraoka Yukiharu

JOURNAL OF CRYSTAL GROWTH   Vol. 382   page： 31-35   2013.11

Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature Reviewed

Machida Emi, Horita Masahiro, Yamasaki Koji, Ishikawa Yasuaki, Uraoka Yukiharu, Ikenoue Hiroshi

JOURNAL OF DISPLAY TECHNOLOGY   Vol. 9 ( 9 ) page： 741-746   2013.9

Effects of Gate Insulator on Thin-Film Transistors With ZnO Channel Layer Deposited by Plasma-Assisted Atomic Layer Deposition Reviewed

Kawamura Yumi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

JOURNAL OF DISPLAY TECHNOLOGY   Vol. 9 ( 9 ) page： 694-698   2013.9

Thermal reversibility in electrical characteristics of ultraviolet/ozone-treated graphene Reviewed

Mulyana Yana, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu, Koh Shinji

APPLIED PHYSICS LETTERS   Vol. 103 ( 6 )   2013.8

Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing Reviewed

Fujii Mami, Ishikawa Yasuaki, Ishihara Ryoichi, van der Cingel Johan, Mofrad Mohammad R. T., Horita Masahiro, Uraoka Yukiharu

APPLIED PHYSICS LETTERS   Vol. 102 ( 12 )   2013.3

Fabrication of Zinc Oxide Nanopatterns by Quick Gel-Nanoimprint Process toward Optical Switching Devices Reviewed

Araki Shinji, Ishikawa Yasuaki, Zhang Min, Doe Takahiro, Lu Li, Horita Masahiro, Nishida Takashi, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 3 )   2013.3

Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect Reviewed

Urakawa Satoshi, Tomai Shigekazu, Ueoka Yoshihiro, Yamazaki Haruka, Kasami Masashi, Yano Koki, Wang Dapeng, Furuta Mamoru, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

APPLIED PHYSICS LETTERS   Vol. 102 ( 5 )   2013.2

Forming SiO2 Thin Film by CO2 Laser Annealing of Spin-On Glass on Polycrystalline Silicon Thin Film Reviewed

Hishitani Daisuke, Horita Masahiro, Ishikawa Yasuaki, Ikenoue Hiroshi, Watanabe Yosuke, Uraoka Yukiharu

PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS     page： 163-166   2013

Memristive nanoparticles formed using a biotemplate Reviewed

Uenuma Mutsunori, Ban Takahiko, Okamoto Naofumi, Zheng Bin, Kakihara Yasuhiro, Horita Masahiro, Ishikawa Yasuaki, Yamashita Ichiro, Uraoka Yukiharu

RSC ADVANCES   Vol. 3 ( 39 ) page： 18044-18048   2013

Forming of SiO2 Film by Spin-On Glass and CO2 Laser Annealing for Gate Insulator of Polycrystalline Silicon Thin Film Transistors Reviewed

Hishitani Daisuke, Horita Masahiro, Ishikawa Yasuaki, Ikenoue Hiroshi, Watanabe Yosuke, Uraoka Yukiharu

2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013)     page： .   2013

Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition Reviewed

Yoshitsugu Koji, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11   Vol. 10 ( 11 ) page： 1426-1429   2013

Thermal distribution in amorphous InSnZnO thin-film transistor Reviewed

Urakawa Satoshi, Tomai Shigekazu, Ueoka Yoshihiro, Yamazaki Haruka, Kasami Masashi, Yano Koki, Wang Dapeng, Furuta Mamoru, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11   Vol. 10 ( 11 ) page： 1561-1564   2013

Unique property of a-InGaZnO/Ag Interface on Thin-Film Transistor Reviewed

Ueoka Yoshihiro, Ishikawa Yasuaki, Bermundo Juan Paolo, Yamazaki Haruka, Urakawa Satoshi, Osada Yukihiro, Horita Masahiro, Uraoka Yukiharu

PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS     page： 37-38   2013

Thermal Degradation and Theoretical Analysis of Amorphous Oxide Thin-Film Transistor Reviewed

Urakawa Satoshi, Tomai Shigekazu, Kasami Masashi, Yano Koki, Wang Dapeng, Furuta Mamoru, Kimura Mutsumi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS     page： 125-128   2013

Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing Reviewed

Machida Emi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu, Ikenoue Hiroshi

APPLIED PHYSICS LETTERS   Vol. 101 ( 25 )   2012.12

Size Control of ZnS Nanoparticles by Electro-Spray Deposition Method Reviewed

Doe Takahiro, Ishikawa Yasuaki, Horita Masahiro, Nishida Takashi, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 51 ( 3 )   2012.3

Thin-Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing Reviewed

Yamasaki Koji, Machida Emi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 51 ( 3 )   2012.3

Guided filament formation in NiO-resistive random access memory by embedding gold nanoparticles Reviewed

Uenuma Mutsunori, Zheng Bin, Kawano Kentaro, Horita Masahiro, Ishikawa Yasuaki, Yamashita Ichiro, Uraoka Yukiharu

APPLIED PHYSICS LETTERS   Vol. 100 ( 8 )   2012.2

Metal-nanoparticle-induced crystallization of amorphous Ge film using ferritin Reviewed

Uenuma Mutsunori, Zheng Bin, Imazawa Takanori, Horita Masahiro, Nishida Takashi, Ishikawa Yasuaki, Watanabe Heiji, Yamashita Ichiro, Uraoka Yukiharu

APPLIED SURFACE SCIENCE   Vol. 258 ( 8 ) page： 3410-3414   2012.2

Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition Reviewed

Kawamura Yumi, Tani Mai, Hattori Nozomu, Miyatake Naomasa, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 51 ( 2 )   2012.2

Analysis of Electronic Structural Change in a-InGaZnO by High Pressure Water Vapor Annealing Reviewed

Ueoka Yoshihiro, Mejima Naoyuki, Matsui Hirosuke, Matsui Fumihiko, Morita Makoto, Kitagawa Satoshi, Fujita Masayoshi, Yasuda Kaoru, Yamazaki Haruka, Urakawa Satoshi, Horita Masahiro, Ishikawa Yasuaki, Daimon Hiroshi, Uraoka Yukiharu

IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2   Vol. 19   page： 887-890   2012

Crystallization to Polycrystalline Silicon Films by Underwater Laser Annealing and Its Application to Thin Film Transistors Reviewed

Machida Emi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu, Ikenoue Hiroshi

2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS     page： 111-114   2012

Effects of Gate Insulator on Thin Film Transistor with ZnO Channel Layer Deposited by Plasma Assisted Atomic Layer Deposition Reviewed

Kawamura Yumi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS     page： 179-182   2012

Cu nanoparticle induced crystallization of amorphous Ge film using ferritin Reviewed

Uenuma Mutsunori, Zheng Bin, Bundo Kosuke, Horita Masahiro, Ishikawa Yasuaki, Yamashita Ichiro, Uraoka Yukiharu

2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS     page： 227-230   2012

Fabrication of Zinc Oxide Nano-patterns by Quick Gel-nanoimprint Process toward Optical Switching Devices Reviewed

Araki Shinji, Zhang Min, Doe Takahiro, Lu Li, Horita Masahiro, Nishida Takashi, Ishikawa Yasuaki, Uraoka Yukiharu

2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS     page： 29-32   2012

Super Low-Temperature Formation of Polycrystalline Silicon Films on Plastic Substrates by Underwater Laser Annealing Reviewed

Machida Emi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu, Okuyama Tetsuo, Ikenoue Hiroshi

IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 1   Vol. 19   page： 303-306   2012

Unique Phenomenon in Degradation of Amorphous In2O3-Ga2O3-ZnO Thin-Film Transistors under Dynamic Stress Reviewed

Fujii Mami, Ishikawa Yasuaki, Horita Masahiro, Uraoka Yukiharu

APPLIED PHYSICS EXPRESS   Vol. 4 ( 10 )   2011.10

Anomalously low Ga incorporation in high Al-content AlGaN grown on (11(2)over-bar0) non-polar plane by molecular beam epitaxy Reviewed

Ueta Shunsaku, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 208 ( 7 ) page： 1498-1500   2011.7

Resistive random access memory utilizing ferritin protein with Pt nanoparticles Reviewed

Uenuma Mutsunori, Kawano Kentaro, Zheng Bin, Okamoto Naofumi, Horita Masahiro, Yoshii Shigeo, Yamashita Ichiro, Uraoka Yukiharu

NANOTECHNOLOGY   Vol. 22 ( 21 )   2011.5

ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition Reviewed

Kawamura Yumi, Hattori Nozomu, Miyatake Naomasa, Horita Masahiro, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 4 )   2011.4

Resistive Memory Utilizing Ferritin Protein with Nano Particle Reviewed

Uenuma Mutsunori, Kawano Kentaro, Zheng Bin, Horita Masahiro, Yoshii Shigeo, Yamashita Ichiro, Uraoka Yukiharu

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS   Vol. 470   page： 92-97   2011

Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiCd(1(1)over-bar00) Reviewed

Horita Masahiro, Kimoto Tsunenobu, Suda Jun

APPLIED PHYSICS EXPRESS   Vol. 3 ( 5 )   2010

Effect of Post-Thermal Annealing of Thin-Film Transistors with ZnO Channel Layer Fabricated by Atomic Layer Deposition Reviewed

Kawamura Yumi, Horita Masahiro, Uraoka Yukiharu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 49 ( 4 )   2010

Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (11(2)over-bar0) and (1(1)over-bar00) Planes under Group-III-Rich Conditions Reviewed

Horita Masahiro, Kimoto Tsunenobu, Suda Jun

APPLIED PHYSICS EXPRESS   Vol. 2 ( 9 )   2009.9

Observation of novel defect structure in 2H-AlN grown on 6H-SiC(0001) substrates with 3-bilayer-height step-and-terrace structures Reviewed

Okumura Hironori, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 206 ( 6 ) page： 1187-1189   2009.6

Polytype Replication in Heteroepitaxial Growth of Nonpolar AlN on SiC Reviewed

Suda Jun, Horita Masahiro

MRS BULLETIN   Vol. 34 ( 5 ) page： 348-352   2009.5

Surface Morphologies of 4H-SiC(11(2)over-bar0) and (1(1)over-bar00) Treated by High-Temperature Gas Etching Reviewed

Horita Masahiro, Kimoto Tsunenobu, Suda Jun

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 47 ( 11 ) page： 8388-8390   2008.11

Nonpolar 4H-AlN grown on 4H-SiC (1(1)over-bar00) with reduced stacking fault density realized by persistent layer-by-layer growth Reviewed

Horita Masahiro, Kimoto Tsunenobu, Suda Jun

APPLIED PHYSICS LETTERS   Vol. 93 ( 8 )   2008.8

High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy Reviewed

Horita Masahiro, Suda Jun, Kimoto Tsunenobu

APPLIED PHYSICS LETTERS   Vol. 89 ( 11 )   2006.9

Growth of nonpolar AIN and AlGaN on 4H-SiC (1-100) by molecular beam epitaxy Reviewed

Armitage Rob, Horita Masahiro, Kimoto Tsunenobu

GaN, AIN, InN and Related Materials   Vol. 892   page： 705-710   2006

低ドーズSi, Al, Nイオン注入GaNのルミネッセンス評価

嶋紘平, 堀田昌宏, 須田淳, 石橋章司, 上殿明良, 秩父重英

第86回応用物理学秋季学術講演会  2025.9.9 

電子線照射を活用したGaNの真性欠陥トラップ評価 Invited

堀田昌宏, 須田淳

応用物理学会結晶工学分科会 第163回研究会  2025.6.18 

窒化ガリウム中の点欠陥と深い準位の評価 Invited

堀田 昌宏, 須田 淳

応用物理学会 先進パワー半導体分科会 第29回研究会  2025.3.11 

Electron traps with extremely long capture time constant related to threading dislocations in n-type GaN with oxygen ion implantation and annealing International conference

Hayashi, K., Horita, M., Tanaka, R., Takashima, S., Ueno, K., Suda, J.

12th International Workshop on Nitride Semiconductors 2024  2024.11.5 

Identification of deep levels originating from nitrogen interstitials in n-type GaN International conference

Endo, M., Suda, J., Horita, M.

12th International Workshop on Nitride Semiconductors 2024  2024.11.7 

Characterization of Extrinsic and Intrinsic Point Defects in Homoepitaxial GaN Invited International conference

Suda, J., Horita, M.

12th International Workshop on Nitride Semiconductors 2024  2024.11.7 

GaNパワーデバイス研究開発の最新動向 Invited

堀田 昌宏, 須田 淳

第88回半導体・集積回路技術シンポジウム  2024.8.26 

ホモエピタキシャル成長n 型GaNにおいて電子線照射によりE_C − 1 eV 付近に形成される窒素変位関連トラップの熱アニール挙動

遠藤彗，堀田昌宏，須田淳

第71回応用物理学会春季学術講演会  2024.3.24 

酸素イオン注入n型GaNで観測される実効ドナー密度変動と長い捕獲時定数を持つトラップの関係性

林慶祐，堀田昌宏，田中亮，高島信也，上野勝典，須田淳

第71回応用物理学会春季学術講演会  2024.3.24 

ホモエピタキシャル成長n型GaN中の格子間窒素が形成する2つの準位の特定

遠藤彗，堀田昌宏，須田淳

第71回応用物理学会春季学術講演会  2024.3.24 

Characterization of nitrogen-displacement-related traps in GaN Invited International conference

Horita, M. , Suda, J.

14th International Conference on Nitride Semiconductors  2023.11.14 

Hall-effect Measurement of Homoepitaxial N-type GaN with Nitrogen-displacement-related Point Defects Formed by Electron Beam Irradiation International conference

Kojima, C. , Horita, M. , Suda, J.

14th International Conference on Nitride Semiconductors  2023.11.17 

Evaluation of recombination centers originating from nitrogen-displacement-related defects in homoepitaxial n-type and p-type GaN International conference

Endo, M. , Horita, M. , Suda, J.

14th International Conference on Nitride Semiconductors  2023.11.17 

[講演奨励賞受賞記念講演] 電子線照射により窒素変位関連欠陥を選択的に導入したホモエピタキシャル成長GaN中の再結合中心の評価 Invited

遠藤彗，堀田昌宏，須田淳

第84回応用物理学会秋季学術講演会  2023.9.22 

Thermal annealing behavior of nitrogen-displacement-related defects in homoepitaxial n-type GaN International conference

Endo, M., Horita, M., Suda, J.

The 32nd International Conference on Defects in Semiconductors  2023.9.14 

ホモエピタキシャル成長GaN 中の窒素原子変位に関連した再結合中心の評価

遠藤彗，堀田昌宏，須田淳

第15回ナノ構造・エピタキシャル成長講演会  2023.6.16 

GaN中のN変位関連欠陥が形成するトラップの評価 Invited

堀田昌宏，須田淳

第15回ナノ構造・エピタキシャル成長講演会  2023.6.15 

電子線照射により窒素変位関連欠陥を選択的に導入したホモエピタキシャル成長GaN p-n接合ダイオードの再結合電流解析

遠藤 彗，堀田 昌宏，須田 淳

第70回応用物理学会春季学術講演会  2023.3.17 

GaN pn接合の容量過渡分光法においてフィリングパルス0 V印加にもかかわらず観測される少数キャリアシグナルの起源

清水 威杜，大橋 拓斗，冨田 一義，堀田 昌宏，須田 淳

第70回応用物理学会春季学術講演会  2023.3.17 

137 keVの電子線照射で意図的に窒素関連欠陥準位を導入したn型GaNのホール効果測定

小島 千寛，堀田 昌宏，須田 淳

第70回応用物理学会春季学術講演会  2023.3.17 

GaN中点欠陥が形成するトラップの評価 Invited

堀田 昌宏，須田 淳

ワイドギャップ半導体学会第9回研究会  2022.12.16 

Si concentration dependence of nitrogen-related electron traps introduced by electron beam irradiations to homoepitaxial n-type GaN International conference

M. Endo, M. Horita, and J. Suda

International Workshop on Nitride Semiconductors 2022  2022.10.12 

N極性面上低温成膜Ge添加GaNスパッタ膜の電気的特性評価

遠藤 彗，堀田 昌宏，須田 淳

第83回応用物理学会秋季学術講演会  2022.9.23 

Nitrogen-displacement-related hole traps in homoepitaxial p-type GaN

Meguru Endo, Masahiro Horita, Jun Suda

2021.9.11 

Correlation between concentrations of iron and EC – 0.6 eV electron trap in n-type GaN grown by MOVPE International conference

M. Horita, T. Narita, K. Kachi, and J. Suda

20th International Conference on Metalorganic Vapor Phase Epitaxy  2022.7.14 

Characterization of a photoionization cross section ratios of electron traps in n-type GaN by optical ICTS using sub-bandgap-light irradiation

Meguru Endo, Masahiro Horita, Jun Suda

2022.3.23 

Investigation of Electron Traps in Homoepitaxial n-type GaN Grown by MOVPE International conference

Masahiro Horita and Jun Suda

International Conference on Materials and Systems for Sustainability 2021  2021.11.6 

Nitrogen-displacement-related Hole Traps in N-type GaN with Electron Beam Irradiations in the Energy Range from 100 to 400 keV International conference

Meguru Endo, Masahiro Horita, Kazutaka Kanegae, and Jun Suda

International Conference on Materials and Systems for Sustainability 2021 

Nitrogen-displacement-related hole traps in MOVPE-grown homoepitaxial p-type GaN

Meguru Endo, Masahiro Horita, Jun Suda

The 40th Electronic Materials Symposium  2021.10.11 

Nitrogen-displacement-related hole traps introduced by electron beam irradiations in MOVPE-grown homoepitaxial p-type GaN International conference

Meguru Endo, Masahiro Horita, and Jun Suda

31st International Conference on Defects in Semiconductors  2021.7.26  31st International Conference on Defects in Semiconductors Conference Committees

酸素イオン注入によりn型GaN中に形成される電子トラップ

柴田優一，堀田昌宏，田中亮，高島信也，上野勝典，須田淳

第68回応用物理学会春季学術講演会 

Hole Traps Introduced by Electron Beam Irradiation in Homoepitaxial n-type GaN and Its Irradiation Energy Dependence

M. Endo, M. Horita, K. Kanegae, J. Suda

第39回電子材料シンポジウム 

MOVPE成長n型GaNに存在するE3トラップの起源検討

堀田昌宏，成田哲生，加地徹，須田淳

第81回応用物理学会秋季学術講演会 

電子線照射によりホモエピタキシャル成長n型GaN中に形成されるホールトラップの照射エネルギー依存性

遠藤 彗，鐘ヶ江 一孝，堀田 昌宏，須田 淳

第65回応用物理学会春季学術講演会 

Nitrogen and gallium displacement related deep levels introduced by electron-beam irradiation in MOVPE-grown homoepitaxial n-type GaN

M. Horita, J. Suda

第38回電子材料シンポジウム 

Evaluation of hole traps introduced by electron beam irradiation in homoepitaxial n-type GaN

M. Endo, K. Kanegae, M. Horita, J. Suda

第38回電子材料シンポジウム 

電子線照射によりホモエピタキシャル成長n型GaN中に形成されるホールトラップの評価

遠藤 彗，鐘ヶ江 一孝，堀田 昌宏，須田 淳

第80回応用物理学会秋季学術講演会 

電子線照射によりホモエピタキシャル成長n型GaN中に形成される深い準位の低温における挙動

遠藤彗, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会 

GaN -MOSFETのHall測定

上野勝典, 松山秀昭, 田中亮, 高島信也, 江戸雅晴, 堀田昌宏, 須田淳, 中川清和

第66回応用物理学会春季学術講演会 

ホモエピタキシャル成長n型GaN中に2 MeV電子線照射により形成される深い準位

堀田昌宏, 成田哲生, 加地徹, 上杉勉, 須田淳

第66回応用物理学会春季学術講演会 

DLTSおよびHall測定による GaNエピ層の欠陥準位評価 Invited

堀田昌宏, 須田淳

第6回パワーデバイス用Siおよび関連半導体材料に関する研究会 

Deep levels introduced by electron beam irradiation in the energy range from 100 keV to 2 MeV in MOVPE-grown homoepitaxial n-type GaN Invited International conference

M. Horita, T. Narita, T. Kachi, T. Uesugi, J. Suda

Energy dependence of deep level formation by electron-beam irradiation in homoepitaxial n-type GaN

M. Horita, J. Suda

第37回電子材料シンポジウム 

電子線照射によりホモエピタキシャル成長n型GaN中に形成される深い準位の形成エネルギーしきい値

堀田昌宏, 須田淳

第79回応用物理学会秋季学術講演会 

マルチウェハリアクタによって4インチサファイア基板上にMOVPE成長した低ドープn型GaNの実効ドナー密度分布

坂尾佳祐, 堀田昌宏, 須田淳, 朴冠錫, 山岡優哉, 矢野良樹, 松本功

第79回応用物理学会秋季学術講演会 

Si-doped GaN Growth as a Drift Layer of Vertical Power Devices by Using Production Scale Metalorganic Chemical Vapor Deposition International conference

G. Piao, Y. Yano, Y. Yamaoka, T. Tabuchi, K. Matsumoto, K. Sakao, K. Kanegae, M. Horita, J. Suda

Design Principles of Metal-Oxide-Semiconductor Structures for Vertical GaN Power Devices Invited International conference

Narita, T., Ito, K., Iguchi, H., Kikuta, D., Iwasaki, S., Kataoka, K., Kanechika, M., Kano, E., Ikarashi, N., Tomita, K., Horita, M., Suda, J., and Kachi, T.

2026 IEEE International Reliability Physics Symposium  2026.3.25 

MgおよびNイオン連続注入と超高圧アニールを用いて作製した縦型GaN JBSダイオードの電流-電圧特性に対するTCAD解析

北川和輝, 上杉勉, 堀田昌宏, 加地徹, 須田淳

第73回応用物理学春季学術講演会  2026.3.16 

AlSiO/p-GaN MOSキャパシタの容量-電圧特性において温度上昇に伴い顕在化する二段階プラトー

清史幸, 伊藤健治, 堀田昌宏, 加地徹, 須田淳

第73回応用物理学春季学術講演会  2026.3.16 

Coulomb Scattering Centers Limiting Channel Mobility in AlSiO/AlN/GaN MOSFETs International conference

Narita, T., Ito, K., Tomita, K., Horita, M., Iguchi, H., Iwasaki, S., and Kikuta, D.,

The 56th IEEE Semiconductor Interface Specialists Conference  2025.12.11 

Impact of Implanted Species on Excess Donors Introduced in n-type GaN Epitaxial Layers International conference

Iguchi, H., Horita, M., Kataoka, K., Narita, T., Kachi, T., and Suda, J.

2025 International Conference on Solid State Devices and Materials  2025.9.17 

過渡容量分光法によるQuartz-free-HVPE成長高純度n型GaNのトラップ評価

平山祐輔, 堀田昌宏, 須田淳, 金木奨太, 藤倉序章

第86回応用物理学秋季学術講演会  2025.9.8 

Ultra-high-pressure annealing with a carbon capping layer for activation of Mg ion-implanted GaN International conference

Sumida, K., Sierakowski, K., Sochacki, T., Horita, M., Bockowski, M., Kachi, T., and Suda, J.

15th International Conference on Nitride Semiconductors  2025.7.7 

Breakdown Voltage Analysis of Vertical GaN p-n Junction Diodes with Junction Termination Extension Formed by Channeled Mg Implantation International conference

Kitagawa, K., Uesugi, T., Horita, M., Kachi, T., and Suda, J.

15th International Conference on Nitride Semiconductors  2025.7.10 

New Interpretation of Fermi-level Pinning Behavior in P-type GaN MOS Capacitors via Temperature-Dependent C-V measurements International conference

Sei, F., Ito, K., Horita, M., Kachi, T., and Suda, J.

15th International Conference on Nitride Semiconductors  2025.7.8 

Impact of Minority Carrier Injection on the Annealing Behavior of Nitrogen Interstitials in Homoepitaxial n-type GaN International conference

Endo, M., Suda, J., and Horita, M.

15th International Conference on Nitride Semiconductors  2025.7.7 

Extremely small trap concentrations in quartz-free hydride vapor phase epitaxy-grown n-type GaN confirmed by capacitance transient spectroscopy International conference

Hirayama, Y., Horita, M., Kaneki, S., Fujikura, H., and Suda, J.

15th International Conference on Nitride Semiconductors  2025.7.7 

Mｇイオン注入の進展とGaN JBSダイオードの実証 Invited

加地徹, Maciej Matys, 北川和輝, 片岡恵太, 成田哲生, 堀田昌宏, 須田淳

応用物理学会応用電子物性分科会合同研究会  2025.6.19 

高チャネル移動度と安定なノーマリーオフ動作を実現するGaN MOSFETの界面電化制御 Invited

成田哲生, 伊藤健治, 井口紘子, 菊田大悟, 兼近将一, 冨田一義, 岩崎四郎, 片岡恵太, 狩野絵美, 五十嵐信行, 堀田昌宏, 須田淳, 加地徹

応用物理学会応用電子物性分科会合同研究会  2025.6.19 

Analysis of Acceptor Activation and Lateral Diffusion of Channeled-implanted Mg Atoms in Vertical GaN Junction Barrier Schottky Diodes International conference

Kitagawa, K., Uesugi, T., Horita, M., Kachi, T., and Suda, J.

The 37th International Symposium on Power Semiconductor Device and Ics  2025.6.3 

Reduction of Compensating Donor Concentration by Sequential N-ion Implantation in Mg-ion Implanted p-GaN International conference

Sumida, K., Kataoka, K., Narita, T., Horita, M., Kachi, T., Suda, J.

12th International Workshop on Nitride Semiconductors 2024  2024.11.5 

Characterization of GaN vertical JBS diodes fabricated by channeled implantation of Mg ions and subsequent ultra-high-pressure annealing International conference

Kitagawa, K., Matys, M., Uesugi, T., Horita, M., Kachi, T., Suda, J.

12th International Workshop on Nitride Semiconductors 2024  2024.11.6 

Hirayama, Y., Shimizu, M., Hikosaka, T., Nago, H., Kajiwara, Y., Nunoue, S., Horita, M., and Suda, J.

Current Transport Mechanism of Carbon-doped GaN Schottky Barrier Diodes Grown on Si substrates

2024.10.3 

Study of excess donor-like defects introduced by Si-ion implantation and subsequent annealing in n-type homoepitaxial GaN layers International conference

Iguchi, H., Kataoka, K., Horita, M., Narita, T., Tomita, K., Suda, J.

24th International Conference on Ion Implantation Technology 2024  2024.9.25 

Mgイオン注入p-GaNにおける注入領域および拡散領域のNイオン連続注入による補償ドナー濃度低減効果 Invited

角田 健輔, 片岡 恵太, 成田 哲生, 堀田 昌宏, 加地 徹, 須田 淳

第85回応用物理学秋季学術講演会  2024.9.16 

イオン注入により形成されるドナー型欠陥の起源解明に向けた低ドーズAlイオン注入GaNの実効ドナー密度の深さ方向分布の評価

井口 紘子, 堀田 昌宏, 片岡 恵太, 成田 哲生, 渡邉 浩崇, 新田 州吾, 本田 善央, 天野 浩, 須田 淳

第85回応用物理学秋季学術講演会  2024.9.19 

Si基板上炭素ドープGaNショットキーバリアダイオードの電流輸送機構の検討

平山 祐輔, 清水 真理子, 彦坂 年輝, 名古 肇, 梶原 瑛祐, 布上 真也, 堀田 昌宏, 須田 淳

第85回応用物理学秋季学術講演会  2024.9.19 

Mgチャネリングイオン注入および超高圧アニールを用いて作製した縦型GaN JBSダイオードにおける電流-電圧特性の注入量依存性 Invited

北川 和輝, Maciej Matys, 上杉 勉, 堀田 昌宏, 加地 徹, 須田 淳

第85回応用物理学秋季学術講演会  2024.9.16 

Engineering of Channel Mobility and Threshold Voltage in AlSiO/AlN/p-type GaN Metal–Oxide–Semiconductor Field-Effect Transistors Invited International conference

Narita, T., Ito, K., Kanechika, M., Iguchi, H., Iwasaki, S., Kikuta, D., Kano, E., Ikarashi, N., Tomita, K., Horita, M., Suda, J., Kachi, T.

2024 International Conference on Solid State Devices and Materials  2024.9.4 

Engineering of Interface Charges in AlSiO/AlN/p-type GaN-MOSFETs to Control Threshold Voltage Stability and Channel Mobility Invited International conference

Narita, T., Ito, K., Iguchi, H., Iwasaki, S., Kikuta, D., Kano, E., Ikarashi, N., Tomita, K., Horita, M., Suda, J.

15th Topical Workshop on Heterostructure Microelectronics  2024.8.29 

Engineering of Channel Mobility, Threshold Voltage and Reliability in GaN MOSFETs Using AlSiO/AlN Gate Stacks Formed By Plasma-Enhanced Atomic Layer Deposition Invited International conference

Narita, T., Ito, K., Iguchi, H., Kikuta, D., Iwasaki, S., Kataoka, K., Kano, E., Ikarashi, N., Kanechika, M., Tomita, K., Horita, M., Suda, J.

GaN Marathon 2024  2024.6.11 

ワイドバンドギャップ半導体の点欠陥の定量 Invited

鐘ケ江 一孝, 堀田 昌宏, 西中 浩之, 木本 恒暢, 須田 淳

第16回ナノ構造・エピタキシャル成長講演会  2024.5.30 

Mgイオン注入p-GaNにおけるNイオン連続注入の補償ドナー濃度低減効果

角田健輔，片岡恵太，成田哲生，堀田昌宏，加地徹，須田淳

第71回応用物理学会春季学術講演会  2024.3.25 

Mgチャネリングイオン注入および超高圧アニールを用いて作製した縦型GaN JBSダイオード

北川和輝，Maciej Matys，上杉勉，加地徹，堀田昌宏，須田淳

第71回応用物理学会春季学術講演会  2024.3.25 

プラズマ支援原子層堆積法で形成したAlN界面層を用いたAlSiO/p-GaN MOSFETの分極制御 Invited

伊藤健治，成田哲生，井口紘子，岩崎四郎，菊田大悟，狩野絵美，五十嵐信行，冨田一義，堀田昌宏，須田淳

シリコン材料・デバイス研究会（SDM）  2024.1.31 

Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AlN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition International conference

Ito., K, Narita, T., Iguchi, H., Iwasaki, S., Kikuta, D., Kano, E., Ikarashi, N., Tomita, K.,Horita, M., Suda, J.

69th Annual IEEE International Electron Devices Meeting  2023.12.9 

Establishment of reliability and high performance for an AlSiO/GaN MOSFET formed by ALD and post-deposition annealing Invited International conference

Narita, T., Ito, K., Kataoka, K., Tomita, K., Iguchi, H., Iwasaki, S., Kano, E., Ikarashi, N., Horita, M., Kikuta, D.

International Conference on Materials and Systems for Sustainability 2023  2023.12.2 

Depth Analysis of Acceptor and Compensating Donor Concentrations in Mg-implanted p-GaN with Ultra-High-Pressure Annealing International conference

Sumida, K. , Horita, M. , Kachi, T. , Suda, J.

14th International Conference on Nitride Semiconductors  2023.11.14 

Annealing behavior of deep levels induced by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN International conference

Iguchi, H. , Horita, M. , Suda, J.

14th International Conference on Nitride Semiconductors  2023.11.16 

超低濃度Siイオン注入を行ったn型GaNエピタキシャル層上に作製したショットキーバリアダイオードの電流-電圧特性

井口紘子，堀田昌宏，須田淳

第84回応用物理学会秋季学術講演会  2023.9.21 

Radiation-induced deep-level traps in homoepitaxial GaN layers Invited International conference

Suda, J., Aoshima, K., Horita, M.

The 32nd International Conference on Defects in Semiconductors  2023.9.11 

GaNパワー半導体プロセスにおけるMOVPE成長特有の不純物の理解と制御 Invited

成田哲生，冨田一義，徳田豊，堀田昌宏，山田真嗣，五十嵐信行，加地徹

応用物理学会　結晶工学分科会　第159回研究会  2023.6.13 

縦型GaNパワーデバイスの高性能化に向けたMOS界面、イオン注入技術の進展と課題 Invited

成田 哲生，伊藤 健治，菊田 大悟，冨田 一義，堀田 昌宏，Maciej Matys，五十嵐 信行，Michal Bockowski，上殿 明良，須田 淳，加地 徹

日本学術振興会R032産業イノベーションのための結晶成長委員会  2023.3.10 

GaNパワーデバイスの特性に影響するエピ・基板の欠陥評価 Invited

成田 哲生，長里 喜隆，兼近 将一，近藤 健，上杉 勉，冨田 一義，池田 智史，渡辺 弘紀，庄司 智幸，山口 聡，木本 康司，小嵜 正芳，岡 徹，小島 淳，堀田 昌宏，加地 徹，須田 淳

日本学術振興会 結晶加工と評価技術 第145委員会 第178回研究会  2023.1.18 

Depth profiling of a donor-like defect induced by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN International conference

H. Iguchi, M. Horita, and J. Suda

International Workshop on Nitride Semiconductors 2022  2022.10.10 

Successful p-type activation of Mg-implanted GaN combined with sequential N implantation and atmospheric pressure anneal with AlN cap International conference

R. Tanaka, S. Takashima, K. Ueno, M. Edo, M. Horita, and J. Suda

International Workshop on Nitride Semiconductors 2022  2022.10.14 

Temperature Dependence of Impact Ionization Coefficients in GaN International conference

T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita, and J. Suda

International Workshop on Nitride Semiconductors 2022  2022.10.14 

Quantitative Relationship between Carbon Concentration and H1 Hole Trap Density in n-Type GaN Homoepitaxial Layers International conference

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, and J. Suda

International Workshop on Nitride Semiconductors 2022  2022.10.14 

Correlation between non-ionizing energy loss and production rates of an electron trap at EC– (0.12-0.20) eV formed by various energetic particles in gallium nitride International conference

K. Aoshima, M. Horita, and J. Suda

International Workshop on Nitride Semiconductors 2022  2022.10.12 

Investigation of Annealing Conditions of Mg-implanted GaN by Ultra-High-Pressure Annealing for Further Reduction of Annealing Pressure International conference

K. Sumida, K. Hirukawa, H. Sakurai, K. Sierakowski, M. Horita, M. Bockowski, T. Kachi and J. Suda

International Workshop on Nitride Semiconductors 2022  2022.10.11 

Correlation between non-ionizing energy loss and production rates of an electron trap formed by various types of radiation in gallium nitride International conference

K. Aoshima, M. Horita, and J. Suda

The Radiation and Its Effects on Components and Systems Conference 2022  2022.10.4 

Improvement of Channel Mobility in AlSiO/GaN MOSFETs using Thin Interfacial Layers to Reduce Border Traps International conference

K. Ito, K. Tomita, D. Kikuta, M. Horita, and T. Narita

2022 International Conference on Solid State Devices and Materials  2022.9.28 

SiC (0001), (11-20), (1-100) MOSFETにおけるHall移動度のボディ層濃度依存性 Invited

伊藤 滉二，田中 一，堀田 昌宏，須田 淳，木本 恒暢

第83回応用物理学会秋季学術講演会  2022.9.21 

超低濃度Siイオン注入GaNにおけるトラップ密度深さ方向分布のアニール温度依存性

井口 紘子，堀田 昌宏，須田 淳

第83回応用物理学会秋季学術講演会  2022.9.23 

高エネルギー粒子線照射により窒化ガリウム中に形成される電子トラップの生成レートとNIELの相関

青島 慶人，堀田 昌宏，須田 淳

第83回応用物理学会秋季学術講演会  2022.9.23 

様々なドーピング密度を有するGaN p+-nおよびp-n+接合ダイオードの絶縁破壊電界

前田 拓也，成田 哲生，山田 真嗣，加地 徹，木本 恒暢，堀田 昌宏，須田 淳

第83回応用物理学会秋季学術講演会  2022.9.22 

High Mobility in SiC MOSFETs with Heavily-Doped p-Bodies Invited International conference

T. Kimoto, K. Tachiki, K. Ito, K. Mikami, M. Kaneko, M. Horita, and J. Suda

14th Topical Workshop on Heterostructure Microelectronics  2022.8.30 

Why does the electron trap concentration at EC –0.6 eV have an inverse correlation with the carbon one in n-type GaN layers? International conference

T. Narita, M. Horita, K. Tomita, K. Kachi, and J. Suda

20th International Conference on Metalorganic Vapor Phase Epitaxy  2022.7.11 

Annealing temperature dependence of depth distribution of net donor density in ultra-low concentration Si-ion implanted GaN

Hiroko Iguchi, Masahiro Horita, Jun Suda

2022.3.23 

Effective Vertical Field Dependence of Hall Mobility for SiC MOSFETs with Various Gate Oxides

Koji Ito, Masahiro Horita, Jun Suda, Tsunenobu Kimoto

2022.3.24 

Origin of peak observed in reverse current-voltage characteristics of homoepitaxial GaN pn junction mesa diodes

Takuto Ohashi, Masakazu Kanechika, Takeshi Kondo, Tsutomu Uesugi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda

2022.3.23 

AlSiOゲート酸化膜を用いたGaNパワーMOSFETの進展と課題 Invited

成田 哲生, 伊藤 健治, 菊田 大悟, 冨田 一義, 堀田 昌宏, 加地 徹

第27回 電子デバイス界面テクノロジー研究会  2022.1.29 

Reduction of Temperature and Pressure in Ultra-High-Pressure Annealing for Activation of Mg-Implanted ptype GaN

The 8th Meeting on Advanced Power Semiconductors  2021.12.9 

Origin of Hysteresis in Reverse Current-Voltage Characteristics of GaN pn Junction Mesa Diodes

The 8th Meeting on Advanced Power Semiconductors  2021.12.9 

Dependence of Channel Mobility on Doping Concentration of p-body in Phosphorus-Treated SiC MOSFETs

The 8th Meeting on Advanced Power Semiconductors  2021.12.10 

Hole traps formed by gamma-ray irradiation in homoepitaxial p-type GaN International conference

Keito Aoshima, Masahiro Horita, and Jun Suda

International Conference on Materials and Systems for Sustainability 2021 

Isothermal Annealing Study on Mg-implanted Homoepitaxial GaN International conference

Kensuke Sumida, Kazufumi Hirukawa, Hideki Sakurai, Masahiro Horita, Michal Bockowski, Tetsu Kachi, Jun Suda

International Conference on Materials and Systems for Sustainability 2021 

Universal Mobility in SiC MOSFETs with Very Low Interface State Density International conference

Koji Ito, Masahiro Horita, Jun Suda, Tsunenobu Kimoto

13th European Conference on Silicon Carbide and Related Materials  2021.10.26 

SiO₂/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method International conference

Keito Aoshima, Noriyuki Taoka, Masahiro Horita, Jun Suda

2021 International Conference on Solid State Devices and Materials  2021.9.9 

AlSiO/p型GaN MOSFETにおける移動度制限因子の解析

成田哲生，伊藤健治，冨田一義，堀田昌宏，菊田大悟

第68回応用物理学会春季学術講演会 

GaNにおける電子・正孔の衝突イオン化係数の温度依存性

前田拓也，成田哲生，山田真嗣，加地徹，木本恒暢，堀田昌宏，須田淳

第68回応用物理学会春季学術講演会 

リン処理を施したSiC MOSFETにおける実効移動度のボディ電位依存性

伊藤滉二，堀田昌宏，須田淳，木本恒暢

第68回応用物理学会春季学術講演会 

DLTS法によるn型GaN中の深い準位評価に対してショットキー障壁高さが与える影響の定量的解析

青島慶人，堀田昌宏，須田淳

第68回応用物理学会春季学術講演会 

Mgイオン注入GaNの超高圧アニールによるMgとHの熱拡散

櫻井秀樹，成田哲生，晝川十史，角田健輔，山田真嗣，片岡恵太，堀田昌宏，五十嵐信行，M. Bockowski，須田淳，加地徹

第68回応用物理学会春季学術講演会 

Mgイオン注入p型GaNにおける超高圧アニール温度の低減化に向けた検討

晝川十史，櫻井秀樹，藤倉序章，堀田昌宏，M. Bockowski，乙木洋平，加地徹，須田淳

第68回応用物理学会春季学術講演会 

MOVPE法によるn型GaNドリフト層形成と残留不純物制御 Invited

成田哲生，堀田昌宏，冨田一義，加地徹，須田淳

第49回結晶成長国内会議 

超高圧アニールを用いたMgイオン注入GaNのp型伝導制御 Invited

櫻井秀樹，成田哲生，晝川十史，山田真嗣，片岡恵太，Malgorzata Iwinska，堀田昌宏，五十嵐信行，Michal Bockowski，須田淳，加地徹

第49回結晶成長国内会議 

Impact of The Schottky Barrier Height on Deep-level Transient Spectroscopy of Gamma-ray-irradiated ntype GaN

K. Aoshima, M. Horita, J. Suda

第39回電子材料シンポジウム 

Impacts of High Temperature Annealing Above 1400 degree C Under N2 Overpressure to Activate Acceptors in Mg-Implanted GaN International conference

H. Sakurai, T. Narita, K. Hirukawa, S. Yamada, A. Koura, K. Kataoka, M. Horita, N. Ikarashi, M. Bockowski, J. Suda, T. Kachi

2020 32nd International Symposium on Power Semiconductor Devices and ICs 

DLTS法によるAl2O3/n型GaN MOS界面準位の評価

青島 慶人，堀田 昌宏，須田 淳，橋詰 保

第65回応用物理学会春季学術講演会 

超高圧アニールによるMg&Nシーケンシャルイオン注入GaNのアクセプタ形成の実証

櫻井 秀樹，成田 哲生，晝川 十史，山田 真嗣，高良 昭彦，片岡 恵太，堀田 昌宏，Bockowski Michal，須田 淳，加地 徹

第65回応用物理学会春季学術講演会 

Mgイオン注入p型GaNの超高圧アニール温度の検討

晝川 十史，櫻井 秀樹，藤倉 序章，堀田 昌宏，Bockowski Michal，乙木 洋平，加地 徹，須田 淳

第65回応用物理学会春季学術講演会 

RIEによって生成されたn型GaN中の深い準位

鐘ヶ江 一孝，山田 真嗣，堀田 昌宏，木本 恒暢，須田 淳

第65回応用物理学会春季学術講演会 

常圧で活性化熱処理したMg注入GaN層のホール効果測定

田中 亮，高島 信也，上野 勝典，江戸 雅晴，堀田 昌宏，須田 淳

第65回応用物理学会春季学術講演会 

SiNキャップ層高温熱処理によりGaN表面付近に導入される電子トラップの深さ方向分布の熱処理時間依存性

古田 悟夢，堀田 昌宏，田中 成明，岡 徹，須田 淳

第65回応用物理学会春季学術講演会 

GaNの電子・正孔の衝突イオン化係数の測定

前田 拓也，成田 哲生，山田 真嗣，加地 徹，木本 恒暢，堀田 昌宏，須田 淳

第65回応用物理学会春季学術講演会 

リン処理を施したSiC(0001)/SiO2界面における反転層電子のユニバーサル移動度の評価

伊藤 滉二，堀田 昌宏，須田 淳，木本 恒暢

第65回応用物理学会春季学術講演会 

光過渡容量分光法によるn型GaN中の正孔トラップ密度の高速かつ精密定量手法

鐘ヶ江 一孝，成田 哲生，冨田 一義，加地 徹，堀田 昌宏，木本 恒暢，須田 淳

先進パワー半導体分科会第6回講演会 

PMA処理を行ったAl2O3/n-GaN MOSダイオードにおいてガンマ線照射により形成されるAl2O3膜中及び界面トラップ

青島慶人，堀田昌宏，金木奨太，須田淳，橋詰保

先進パワー半導体分科会第6回講演会 

Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p−/n+ Junction International conference

T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita, J. Suda

Record breakdown fields of 2.8-3.5 MV/cm in GaN p-n junction diodes

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

第38回電子材料シンポジウム 

Development of accurate and quick measurement method for hole trap density in n-type GaN layers by optical isothermal capacitance transient spectroscopy

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

第38回電子材料シンポジウム 

Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN

K. Aoshima, K. Kanegae, M. Horita, J. Suda

第38回電子材料シンポジウム 

Depth Profiles of Deep Levels Generated by ICP-RIE in 4H-SiC International conference

K. Kanegae, T. Okuda, M. Horita, J. Suda, T. Kimoto

Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction International conference

T. Maeda, X. Chi, H. Tanaka, M. Horita, J. Suda, T. Kimoto

リン処理を施したSiC MOSFETにおけるチャネル移動度のボディ層アクセプタ密度依存性

伊藤 滉二，堀田 昌宏，須田 淳，木本 恒暢

第80回応用物理学会秋季学術講演会 

2 色のサブバンドギャップ光を用いた過渡容量分光法によるn型GaN成長層中の炭素関連欠陥密度の高速定量手法

鐘ヶ江 一孝，成田 哲生，冨田 一義，加地 徹，堀田 昌宏，木本 恒暢，須田 淳

第80回応用物理学会秋季学術講演会 

<11-20>方向に電界印加した4H-SiC p-n接合ダイオードにおけるFranz-Keldysh効果に起因したフォノンアシスト光吸収

前田 拓也，遅 熙倫，田中 一，堀田 昌宏，須田 淳，木本 恒暢

第80回応用物理学会秋季学術講演会 

PMA処理を行ったAl2O3/GaN MOSダイオードにおけるガンマ線照射によるフラットバンド電圧の負方向シフトの膜厚依存性

青島 慶人，堀田 昌宏，金木 奨太，須田 淳，橋詰 保

第80回応用物理学会秋季学術講演会 

様々な電極金属のn 型ホモエピタキシャルGaN SBD における障壁高さ温度係数の比較とそれに対する熱処理の効果

村瀬 亮介，前田 拓也，鐘ヶ江 一孝，須田 淳，堀田 昌宏

第80回応用物理学会秋季学術講演会 

高圧アニールによるMgイオン注入GaNのアクセプタ形成の実証

櫻井 秀樹，山田 真嗣，高良 昭彦，堀田 昌宏，Bockowski Michal，須田 淳，加地 徹

第80回応用物理学会秋季学術講演会 

Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode Invited

前田 拓也，岡田 政也，上野 昌紀，山本 喜之，木本 恒暢，堀田 昌宏，須田 淳

第80回応用物理学会秋季学術講演会 

p-GaN/AlGaN/GaN HEMTのガンマ線照射による閾値電圧シフトとその測定パルス幅依存性

釣本 浩貴，堀田 昌宏，須田 淳

第80回応用物理学会秋季学術講演会 

ショットキー接合のC-V測定によるp型GaNの実効アクセプタ密度評価の精度に関する理論的検討

六野 祥平，堀田 昌宏，須田 淳

第80回応用物理学会秋季学術講演会 

High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow BeveledMesa Structure Combined with Lightly Mg-Doped p-Layers International conference

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, M. Horita, T. Kimoto, J. Suda

Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgaplight-excited isothermal capacitance transient spectroscopy International conference

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

Estimation of Impact Ionization Coefficient in GaN and Its Temperature Dependence by Photomultiplication Measurements Utilizing FranzKeldysh Effect International conference

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

Photon energy dependence of photoionization cross section ratio of electron to hole for the carbon-related hole trap in n-type GaN International conference

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

Deep Level Traps Introduced in GaN Layers by High-Temperature Thermal Treatment with SiN Cap Layers International conference

S. Furuta, M. Horita, N. Tanaka, T. Oka, J. Suda

Determination Methods of H1 Trap Concentration in N-Type GaN Schottky Barriers via Sub-Bandgap-Light Isothermal Capacitance Transient Spectroscopy International conference

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

Growth of P-Type GaN Layers with Low Mg Concentrations by Using MOVPE and the Application to Vertical Power Devices (Invited) Invited International conference

T. Narita, K. Tomita, Y. Tokuda, T. Kogiso, T. Maeda, M. Horita, M. Kanechika, H. Ueda, T. Kachi, J. Suda

Clear Evidence of P-Type Formation by Hall-Effect Measurements of Mg-Ion Implanted GaN Activated with Ultra-High-Pressure Annealing International conference

H. Sakurai, M. Omori, S. Yamada, A. Koura, H. Suzuki, T. Narita, K. Kataoka, M. Horita, M. Boćkowski, J. Suda, T. Kachi

Impact of Gamma-Ray Irradiation on Device Characteristics of p-GaN/ AlGaN/GaN Normally-Off High-Electron-Mobility Transistors International conference

K. Tsurimoto, M. Horita, J. Suda

Impact of Gamma-Ray Irradiation on Capacitance-Voltage Characteristics of Al2O3/GaN MOS Diodes with Post-Metallization Annealing International conference

K. Aoshima, M. Horita, S. Kaneki, J. Suda, T. Hashizume

Estimation of Impact Ionization Coefficient in GaN by Photomultiplication Measurement Utilizing Franz-Keldysh Effect International conference

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

GaNエピ基板上MOS特性の制御

上野勝典, 松山秀昭, 田中亮, 高島信也, 江戸雅晴, 堀田昌宏, 須田淳, 中川清和

電気学会 電子・情報・システム部門(C部門) 電子デバイス研究会 

p-GaN/AlGaN/GaN HEMTのガンマ線照射による特性変化の回復過程

釣本浩貴, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会 

Franz-Keldysh効果を利用した光電流増倍測定によるGaNにおけるキャリアの衝突イオン化係数の推定

前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会 

両側空乏ベベルメサ構造を有するGaN p-n接合ダイオードにおける均一なアバランシェ破壊の実現および平行平板破壊電界の評価

前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会 

ベベルメサ構造GaN p-n接合ダイオードの電界分布シミュレーション

前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会 

Quartz-free-HVPE成長n型GaN層における補償アクセプタの起源解明

鐘ヶ江一孝, 藤倉序章, 乙木洋平, 今野泰一郎, 吉田丈洋, 堀田昌宏, 木本恒暢, 須田淳

第66回応用物理学会春季学術講演会 

SiNキャップ層高温熱処理によりGaN中に導入される深い準位

古田悟夢, 堀田昌宏, 田中成明, 岡徹, 須田淳

第66回応用物理学会春季学術講演会 

横型ショットキーダイオード構造のC-V測定による低ドープn型GaNの実効ドナー密度の評価の精度に関する検討

六野祥平, 坂尾佳祐, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会 

ホモエピタキシャル成長n型GaNショットキー障壁高さの温度係数の電極金属依存性

村瀬亮介, 前田拓也, 鐘ヶ江一孝, 堀田昌宏, 須田淳

第66回応用物理学会春季学術講演会 

ガンマ線照射によるAl2O3/GaN MOSダイオードの容量-電圧特性の変化

青島慶人, 金木奨太, 堀田昌宏, 須田淳, 橋詰保

第66回応用物理学会春季学術講演会 

Overview of carrier compensation in n-type and p-type GaN layers grown by metalorganic vapor phase epitaxy Invited International conference

T. Narita, K. Tomita, Y. Tokuda, T. Kogiso, N. Ikarashi, N. Sawada, M. Horita, J. Suda, T. Kachi

Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination International conference

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

n型GaN中の正孔トラップ密度の定量評価

鐘ヶ江一孝, 成田哲生, 冨田一義, 加地徹, 堀田昌宏, 木本恒暢, 須田淳

先進パワー半導体分科会 第5回講演会 

DLTS studies of quartz-free-HVPE-grown homoepitaxial n-type GaN Invited International conference

K. Kanegae, H. Fujikura, Y. Otoki, T. Konno, T. Yoshida, M. Horita, T. Kimoto, J. Suda

Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN International conference

K. Aoshima, K. Kanegae, M. Horita, J. Suda

Hole occupancy ratio of H1 trap in homoepitaxial n-type GaN under sub-bandgap light irradiation International conference

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

Temperature Dependence of Avalanche Multiplicationin GaN PN Diodes Measured by Light Absorption Due to Franz-Keldysh Effect International conference

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from the Recombination Current in GaN p-n Junction Diodes International conference

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

Temperature dependence of Avalanche Multiplication in GaN PN Diodes Measured by Using Sub-bandgap Light Irradiation

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

第37回電子材料シンポジウム 

p-GaN/AlGaN/GaN HEMTのガンマ線照射による閾値電圧およびゲート電流の変化

釣本浩貴, 堀田昌宏, 須田淳

第79回応用物理学会秋季学術講演会 

Franz-Keldysh効果による光電流を利用したGaN p-n接合ダイオードにおけるアバランシェ増倍の温度依存性の測定

前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

第79回応用物理学会秋季学術講演会 

GaN p-n接合ダイオードの再結合電流解析によるホモエピタキシャル成長p-GaNにおけるSRH寿命の評価

前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

第79回応用物理学会秋季学術講演会 

n型GaN 中の正孔トラップ密度の定量評価に向けたサブバンドギャップ光照射時の正孔占有率の評価

鐘ヶ江一孝, 成田哲生, 冨田一義, 加地徹, 堀田昌宏, 木本恒暢, 須田淳

第79回応用物理学会秋季学術講演会 

GaN自立基板上Ni/n-GaN SBDにおける障壁高さ温度特性のドナー密度依存性

村瀬亮介, 前田拓也, 鐘ヶ江一孝, 堀田昌宏, 須田淳

第79回応用物理学会秋季学術講演会 

ガンマ線照射によりホモエピタキシャル成長n型GaN中に形成される深さ1 eV以上の電子トラップ

青島慶人, 鐘ヶ江一孝, 堀田昌宏, 須田淳

第79回応用物理学会秋季学術講演会 

4H-SiC p-n接合ダイオードにおけるFranz-Keldysh効果に起因したフォノンアシスト光吸収

前田拓也, 遅熙倫, 堀田昌宏, 須田淳, 木本恒暢

第79回応用物理学会秋季学術講演会 

Photocurrent induced by Franz-Keldysh effect in a 4H-SiC p-n junction diode under high reverse bias voltage International conference

T. Maeda, X. L. Chi, M. Horita, J. Suda, T. Kimoto

Measurement of Avalanche Multiplication Factor in GaN p-n Junction Diode Using Sub-Bandgap Light Absorption Due to Franz-Keldysh Effect International conference

T. Maeda, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

Accurate estimation of H1 trap concentration in n-type GaN layers International conference

K. Kanegae, M. Horita, T. Kimoto, J. Suda

Electrical characterization of homoepitaxial GaN layers for GaN vertical power devices Invited International conference

J. Suda, M. Horita

サブバンドギャップ光照射を用いた GaN p-n接合ダイオードのアバランシェ増倍の測定

前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

第10回ナノ構造・エピタキシャル成長講演会 

Franz-Keldysh effect in GaN Schottky barrier diodes and p-n junction diodes under high reverse bias voltage International conference

T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

Measurement of H1 trap concentration in MOVPE-grown homoepitaxial n-type GaN by optical isothermal capacitance transient spectroscopy using sub-bandgap photoexcitation International conference

K. Kanegae, M. Horita, T. Kimoto, J. Suda

Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode consistently obtained by C-V, I-V, and IPE measurements International conference

T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita, J. Suda

Mgイオン注入GaN層上におけるノーマリーオフMOSFET検討 Invited

高島信也, 田中亮, 上野勝典, 松山秀昭, 江戸雅晴, 高橋言緒, 清水三聡, 石橋章司, 中川清和, 堀田昌宏, 須田淳, 小島一信, 秩父重英, 上殿明良

第149回結晶工学分科会研究会 GaN on GaNパワーデバイスにむけて ～p型GaNの結晶工学～ 

Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates International conference

Horita M

IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai  2017.7.31