Updated on 2022/04/03

写真a

 
HORITA Masahiro
 
Organization
Graduate School of Engineering Electronics 2 Associate professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Electrical Engineering, Electronics, and Information Engineering
Title
Associate professor
Contact information
メールアドレス

Degree 1

  1. 博士(工学) ( 2009.3   京都大学 ) 

Research Interests 5

  1. III-N semiconductor

  2. gallium nitride

  3. 電子デバイス

  4. point defect characterization

  5. Deep level transient spectroscopy (DLTS)

Research Areas 2

  1. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  2. Nanotechnology/Materials / Crystal engineering

Current Research Project and SDGs 1

  1. Study on deep levels in GaN

Research History 5

  1. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section   Associate professor

    2018.10

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    Country:Japan

  2. Nagoya University   Department of Electronics, Graduate School of Engineering   Associate professor

    2018.10

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    Country:Japan

  3. Kyoto University   Department of Electronic Science and Engineering, Graduate School of Engineering

    2015.5 - 2018.9

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    Country:Japan

  4. Nara Institute of Science and Technology   Graduate School of Materials Science   Assistant Professor

    2009.4 - 2015.4

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    Country:Japan

  5. Japan Society for Promotion of Science

    2008.4 - 2009.3

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    Country:Japan

Education 1

  1. Kyoto University   Graduate School, Division of Engineering

    2006.4 - 2009.3

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    Country: Japan

Professional Memberships 4

  1. The Japan Society of Wide Gap Semiconductors

    2021.4

  2. Advanced Power Semiconductors

    2016.12

  3. the Japanese Association for Crystal Growth

    2006.11

  4. The Japan Society of Applied Physics

    2004.1

Committee Memberships 2

  1. ワイドギャップ半導体学会   企画幹事  

    2021.4   

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    Committee type:Academic society

  2. 第14回窒化物半導体国際会議   プログラム庶務委員  

    2019.9 - 2024.3   

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    Committee type:Academic society

 

Papers 46

  1. Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations Reviewed

    Masahiro Horita, Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo, Tokio Takahashi, Mitsuaki Shimizu, Jun Suda

    Japanese Journal of Applied Physics   Vol. 56 ( 3 )   2017.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP PUBLISHING LTD  

    Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 x 10(16)cm(-3) (lightly doped) to 3.8 x 10(19)cm(-3) (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of p-GaN was 4 x 10(6)cm(-2) measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 130 to 450 K. For the lightly doped p-GaN, the acceptor concentration of 7.0 x 10(16)cm(-3) and the donor concentration of 3.2 x 10(16)cm(-3) were obtained, where the compensation ratio was 46%. We also obtained the depth of the Mg acceptor level to be 220meV. The hole mobilities of 86, 31, 14cm(2)V(-1) 1 s(-1) 1 at 200, 300, 400 K, respectively, were observed in the lightly doped p-GaN. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.56.031001

    Web of Science

  2. SiO2/GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition Reviewed

    Aoshima Keito, Taoka Noriyuki, Horita Masahiro, Suda Jun

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SC )   2022.5

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  3. Breakdown Electric Field of GaN p(+)-n and p-n(+) Junction Diodes With Various Doping Concentrations Reviewed

    Maeda Takuya, Narita Tetsuo, Yamada Shinji, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    IEEE ELECTRON DEVICE LETTERS   Vol. 43 ( 1 ) page: 96 - 99   2022.1

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    Language:English   Publisher:IEEE Electron Device Letters  

    Breakdown characteristics in homoepitaxial GaN p-n junction diodes with p+-n and p-n+ junctions with relatively heavy doping concentrations are systematically investigated. The devices have vertical deep mesa etch termination, which enables uniform (nearly ideal) avalanche breakdown without electric field (E-field) crowding at the device edge. For p+-n junction, breakdown E-field of 3.0, 3.3 and 3.8 MV/cm and breakdown voltage (BV) of 340, 207 and 128 V were achieved at the donor concentrations of 7.5 × 1016, 1.5 × 1017, 3.1× 1017 cm-3, respectively. For p-n+ junction, breakdown E-field of 3.2, 3.3 and 4.0 MV/cm and BV of 235, 180 and 110 V were achieved at the acceptor concentrations of 1.3 × 1017, 1.8 × 1017, 4.1 × 1017 cm-3, respectively. No significant difference of the breakdown characteristics between n-type and p-type voltage-blocking layers was observed. These results are consistent with numerical simulations using impact ionization coefficients (IICs) in GaN reported in our previous studies.

    DOI: 10.1109/LED.2021.3125328

    Web of Science

    Scopus

  4. Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 degrees C in ultra-high-pressure nitrogen ambient Reviewed

    Sumida Kensuke, Hirukawa Kazufumi, Sakurai Hideki, Sierakowski Kacper, Horita Masahiro, Bockowski Michal, Kachi Tetsu, Suda Jun

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 12 )   2021.12

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    Language:English   Publisher:Applied Physics Express  

    We performed an isothermal annealing study on Mg-implanted GaN at 1300 °C in an ultra-high-pressure (1 GPa) nitrogen ambient. Annealing for more than 30 min resulted in a high acceptor activation ratio and a low compensation ratio that were comparable to those obtained with annealing at 1400 °C for 5 min. We also performed annealing at 1300 °C in a reduced nitrogen pressure of 300 MPa which makes us possible to expand the inner diameter of annealing equipment in the future. High electrical activation, similar to one obtained by annealing at 1 GPa, was successfully obtained.

    DOI: 10.35848/1882-0786/ac39b0

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  5. Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy Reviewed

    Aoshima K., Horita M., Suda J.

    AIP Advances   Vol. 11 ( 11 )   2021.11

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    Language:English   Publisher:AIP Advances  

    Deep-level transient spectroscopy (DLTS) using Schottky barrier diodes (SBDs) is widely used for quantitative analysis of deep levels. This study focuses on the dependence of Schottky barrier height on apparent time constants and concentrations of electron traps in n-type GaN. DLTS using SBDs with various barrier heights was carried out. Experimental data show that large reverse leakage currents due to low barrier heights resulted in underestimation of time constants and concentrations. Theoretical calculations considering the impact of leakage currents reproduced experimental results well. Based on the calculations, we suggest a minimum required barrier height where accurate time constants and concentrations can be evaluated.

    DOI: 10.1063/5.0073747

    Scopus

  6. Effects of the sequential implantation of Mg and N ions into GaN for p-type doping Reviewed

    Sakurai Hideki, Narita Tetsuo, Kataoka Keita, Hirukawa Kazufumi, Sumida Kensuke, Yamada Shinji, Sierakowski Kacper, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 11 )   2021.11

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    Language:English   Publisher:Applied Physics Express  

    The sequential implantation of Mg and N ions into GaN was investigated using conventional rapid thermal annealing and ultra-high-pressure annealing (UHPA). In cathodoluminescence, the green luminescence related to nitrogen vacancies (VNs) was mostly suppressed at the Mg/N ratio of 0.5-1.0, whereas the donor-acceptor pair (DAP) emission as a signature of Mg acceptors was maintained high. The excess N implantation reduced the DAP emission through the formation of nonradiative recombination centers. The combined process of optimal Mg/N implantation and UHPA at 1673 K improved ohmic contacts by increasing Mg concentration and suppressing VNs near the surface.

    DOI: 10.35848/1882-0786/ac2ae7

    Web of Science

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  7. Investigation of point defects in GaN for the realization of high performance GaN vertical power devices Reviewed

    SUDA Jun, HORITA Masahiro, KANEGAE Kazutaka

    Oyo Buturi   Vol. 90 ( 10 ) page: 628 - 631   2021.10

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    Language:Japanese   Publisher:The Japan Society of Applied Physics  

    <p>Fundamental knowledge of point defects is essential for developing epitaxial growth, device processes and device design and characterization. However, the knowledge with regard to GaN is quite limited compared to Si and GaAs. The authors have carried out an extensive investigation of point defects in GaN by using deep-level transient spectroscopy (DLTS). In this paper, the origin of the E3 trap, the development of quantitative measurement techniques for carbon-related hole traps in GaN by using sub-bandgap photoexcitation and studies of nitrogen-displacement-related point defects (nitrogen vacancy and interstitial) intentionally formed by electron beam irradiation are reviewed.</p>

    DOI: 10.11470/oubutsu.90.10_628

    CiNii Research

  8. Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy Reviewed

    Kanegae Kazutaka, Okuda Takafumi, Horita Masahiro, Suda Jun, Kimoto Tsunenobu

    JOURNAL OF APPLIED PHYSICS   Vol. 130 ( 10 )   2021.9

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    Language:English   Publisher:Journal of Applied Physics  

    Electron traps generated during the reactive ion etching (RIE) process in n-type 4H-SiC are investigated using the deep-level transient spectroscopy technique and isothermal capacitance transient spectroscopy (ICTS) technique. Two electron traps of the Z1/2 center are detected in the RIE-etched sample by ICTS measurement at 300 K. A method is proposed to determine the depth profiles of the electron traps that are localized near the etched surface, whereby a depth profile is extracted from the dependence of averaged trap density on the depletion layer width. An exponential distribution is assumed as the depth profile of the electron traps generated during the RIE process. The extracted depth profile was confirmed to be consistent with that determined by the double-correlation method. An appropriate function for the depth profile of carrier traps is assumed and the dependence of the averaged trap density on the depletion layer width is analyzed, which enables the extraction of a depth profile that has both higher depth resolution and higher resolution in the carrier trap density with the proposed method than that with the double-correlation method.

    DOI: 10.1063/5.0059588

    Web of Science

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  9. Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy Reviewed

    Kanegae Kazutaka, Narita Tetsuo, Tomita Kazuyoshi, Kachi Tetsu, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 9 )   2021.9

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    Language:English   Publisher:Applied Physics Express  

    The ratio of the photoionization cross sections (σo/n σ o/p) of carbon substituting at the nitrogen site [CN (0/-)] in n-type GaN, which is detected as a hole trap H1 (EV + 0.85 eV) under sub-bandgap-light irradiation (390 nm), is determined with isothermal capacitance transient spectroscopy (ICTS). The current-injection ICTS and the sub-bandgap-light-excited ICTS were compared for the same p+-n junction diode, whereby the hole occupancy ratio (fT) was obtained. Analysis of the dependence of fT on the temperature gave σo/n σ o/p of 3.0 was then used to estimate the charge state of CN (0/-) under sub-bandgap-light irradiation.

    DOI: 10.35848/1882-0786/ac16ba

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  10. Impact ionization coefficients and critical electric field in GaN Reviewed

    Maeda Takuya, Narita Tetsuo, Yamada Shinji, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    JOURNAL OF APPLIED PHYSICS   Vol. 129 ( 18 )   2021.5

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    Language:English   Publisher:Journal of Applied Physics  

    Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p-n junction diode are experimentally investigated at 223-373 K by novel photomultiplication measurements utilizing above- and below-bandgap illumination. The device has a non-punch-through one-side abrupt p--n+ junction structure, in which the depletion layer mainly extends to the p-type region. For above-bandgap illumination, the light is absorbed at the surface p+-layer, and the generated electrons diffuse and reach the depletion layer, resulting in an electron-injected photocurrent. On the other hand, for below-bandgap illumination, the light penetrates a GaN layer and is absorbed owing to the Franz-Keldysh effect in the high electric field region (near the p-n junction interface), resulting in a hole-induced photocurrent. The theoretical (non-multiplicated) photocurrents are calculated elaborately, and the electron- and hole-initiated multiplication factors are extracted as ratios of the experimental data to the calculated values. Through the mathematical analyses of the multiplication factors, the temperature dependences of the impact ionization coefficients of electrons and holes in GaN are extracted and formulated by the Okuto-Crowell model. The ideal breakdown voltage and the critical electric field for GaN p-n junctions of varying doping concentration are simulated using the obtained impact ionization coefficients, and their temperature dependence and conduction-type dependence were discussed. The simulated breakdown characteristics show good agreement with data reported previously, suggesting the high accuracy of the impact ionization coefficients obtained in this study.

    DOI: 10.1063/5.0050793

    Web of Science

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  11. Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing Reviewed

    Hirukawa Kazufumi, Sumida Kensuke, Sakurai Hideki, Fujikura Hajime, Horita Masahiro, Otoki Yohei, Sierakowski Kacper, Bockowski Michal, Kachi Tetsu, Suda Jun

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 5 )   2021.5

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    Isochronal annealing was performed on Mg-ion-implanted GaN under 1 GPa N2 ambient pressure for 5 min at temperatures of 1573-1753 K. Secondary ion mass spectrometry showed diffusion of Mg atoms and introduction of H atoms during annealing. Deeper diffusion was observed with increasing temperature. From Hall-effect measurements, p-type conductivity was found even for the sample with the lowest annealing temperature of 1573 K. For this sample, the acceptor activation ratio was 23% and the compensation ratio was 93%. The acceptor activation ratio increased to almost 100% and the compensation ratio decreased to 12% with increasing annealing temperature.

    DOI: 10.35848/1882-0786/abf4f3

    Web of Science

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  12. Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors Reviewed

    Ito Kenji, Tomita Kazuyoshi, Kikuta Daigo, Horita Masahiro, Narita Tetsuo

    Journal of Applied Physics   Vol. 129 ( 8 )   2021.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0040700

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  13. Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate Reviewed

    Horita Masahiro, Narita Tetsuo, Kachi Tetsu, Suda Jun

    Applied Physics Letters   Vol. 118 ( 1 )   2021.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0035235

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  14. Impact of gamma-ray irradiation on capacitance-voltage characteristics of Al2O3/GaN MOS diodes with and without post-metallization annealing Reviewed

    Aoshima Keito, Horita Masahiro, Suda Jun, Hashizume Tamotsu

    Applied Physics Express   Vol. 14 ( 1 )   2021.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/abd71a

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  15. Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes Reviewed

    Zhang Ziyi, Kushimoto Maki, Horita Masahiro, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    Applied Physics Letters   Vol. 117 ( 15 )   2020.10

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    DOI: 10.1063/5.0027789

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  16. Why do electron traps atE(C)-0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers? Reviewed

    Narita Tetsuo, Horita Masahiro, Tomita Kazuyoshi, Kachi Tetsu, Suda Jun

    Japanese Journal of Applied Physics   Vol. 59 ( 10 )   2020.10

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    Web of Science

  17. Progress on and challenges of p-type formation for GaN power devices Reviewed

    Narita Tetsuo, Yoshida Hikaru, Tomita Kazuyoshi, Kataoka Keita, Sakurai Hideki, Horita Masahiro, Bockowski Michal, Ikarashi Nobuyuki, Suda Jun, Kachi Tetsu, Tokuda Yutaka

    Journal of Applied Physics   Vol. 128 ( 9 )   2020.9

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    DOI: 10.1063/5.0022198

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  18. Impacts of high temperature annealing above 1400<sup>°</sup>C under N<inf>2</inf>overpressure to activate acceptors in Mg-implanted GaN Reviewed

    Sakurai H., Narita T., Hirukawa K., Yamada S., Koura A., Kataoka K., Horita M., Ikarashi N., Bockowski M., Suda J., Kachi T.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   Vol. 2020-September   page: 321 - 324   2020.9

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    Language:English   Publisher:Proceedings of the International Symposium on Power Semiconductor Devices and ICs  

    In this study, we clarify the impact of annealing pressure and temperature of the ultra-high-pressure annealing (UHPA) as a post-implantation-annealing (PIA) on the acceptor activation for Mg-ions-implanted GaN samples. The pressure to prevent the thermal decomposition is absolutely determined by the equilibrium N2 partial pressure in the phase diagram of GaN-Ga-N2 system, so that the pressure below the critical pressure always leads to the serious surface decomposition of GaN. In low temperature cathodoluminescence examinations, the samples processed at 1400°C or above exhibited more intense emissions in the near band edge and donor-acceptor pair band with a suppression of green luminescence related to point defects. Temperature dependent Hall-effect measurement was allowed for the UHPA samples annealed at 1400°C or above, whereas free holes were not observed for the 1300°C-UHPA. Moreover, the acceptor concentrations (Na) for samples annealed at 1400°C or above were close to Mg concentrations. We thus revealed the key process parameters in UHPA, which is at more than 1400°C under the N2 overpressure exceeding the equilibrium partial pressure. These findings can play as a key role in the selective area doping using UHPA.

    DOI: 10.1109/ISPSD46842.2020.9170174

    Scopus

  19. Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing Reviewed

    Sakurai Hideki, Narita Tetsuo, Omori Masato, Yamada Shinji, Koura Akihiko, Iwinska Malgorzata, Kataoka Keita, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu

    Applied Physics Express   Vol. 13 ( 8 )   2020.8

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    Web of Science

  20. Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing Reviewed

    Sakurai H., Narita T., Omori M., Yamada S., Koura A., Iwinska M., Kataoka K., Horita M., Ikarashi N., Bockowski M., Suda J., Kachi T.

    Applied Physics Express   Vol. 13 ( 8 )   2020.8

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    Diffusion in a magnesium (Mg)-implanted homoepitaxial GaN layer during ultra-high-pressure annealing (UHPA, in ambient nitrogen, under 1 GPa) was investigated. Annealing at 1573 K resulted in Mg-segregation at the edge of the implanted region, which was suppressed using a higher temperature of 1673 K. Hydrogen (H) atoms were incorporated during the UHPA, resulting in the Mg and H developing the same diffusion profile in the deeper region. The diffusion coefficient of the Mg-implanted sample was 3.3 10-12 cm2 s-1 at 1673 K from the annealing duration dependence, 30 times larger than that of the epitaxial Mg-doped sample, originating from ion implantation-induced defects.

    DOI: 10.35848/1882-0786/aba64b

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  21. Identification of origin ofE(C)-0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy Reviewed

    Horita Masahiro, Narita Tetsuo, Kachi Tetsu, Suda Jun

    Applied Physics Express   Vol. 13 ( 7 )   2020.7

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  22. Identification of origin of E <inf>C</inf>-0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy Reviewed

    Horita M., Narita T., Kachi T., Suda J.

    Applied Physics Express   Vol. 13 ( 7 )   2020.7

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    The origin of E3 electron traps at E C -0.58 eV in GaN was investigated using Si-doped n-type GaN layers grown on freestanding GaN substrates using MOVPE. These layers contained impurity Fe at various concentrations depending on the growth conditions and the position within the wafer. Twenty E3 concentrations (N T,E3) determined by deep-level transient spectroscopy were plotted against the corresponding Fe concentrations ([Fe]) obtained from secondary ion mass spectrometry. A correlation was evident between N T,E3 and [Fe] in the range (0.4-12) 1015 cm-3, suggesting that the E3 level in MOVPE-grown homoepitaxial GaN originates from the substitution of Fe atoms at Ga sites.

    DOI: 10.35848/1882-0786/ab9e7c

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  23. Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN Reviewed

    Kanegae K.

    Japanese Journal of Applied Physics   Vol. 59 ( SG )   2020.4

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    DOI: 10.35848/1347-4065/ab6863

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  24. Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN and their annealing behavior Reviewed

    Aoshima Keito, Kanegae Kazutaka, Horita Masahiro, Suda Jun

    AIP Advances   Vol. 10 ( 4 )   2020.4

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    DOI: 10.1063/1.5144158

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  25. Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices Reviewed

    Narita Tetsuo, Tomita Kazuyoshi, Kataoka Keita, Tokuda Yutaka, Kogiso Tatsuya, Yoshida Hikaru, Ikarashi Nobuyuki, Iwata Kenji, Nagao Masahiro, Sawada Naoki, Horita Masahiro, Suda Jun, Kachi Tetsu

    Japanese Journal of Applied Physics   Vol. 59 ( SA )   2020.1

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    DOI: 10.7567/1347-4065/ab4610

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  26. Impacts of high temperature annealing above 1400 degrees C under N-2 overpressure to activate acceptors in Mg-implanted GaN Reviewed

    Sakurai Hideki, Narita Tetsuo, Hirukawa Kazufumi, Yamada Shinji, Koura Akihiko, Kataoka Keita, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu

    Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020)     page: 321 - 324   2020

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  27. Impact Ionization Coefficients in GaN Measured by Above- and Sub-E<inf>g</inf> Illuminations for p<sup>-</sup>/n<sup>+</sup> Junction Reviewed

    Maeda T.

    Technical Digest - International Electron Devices Meeting, IEDM   Vol. 2019-December   2019.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/IEDM19573.2019.8993438

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  28. Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing Reviewed

    Sakurai Hideki, Omori Masato, Yamada Shinji, Furukawa Yukihiro, Suzuki Hideo, Narita Tetsuo, Kataoka Keita, Horita Masahiro, Bockowski Michal, Suda Jun, Kachi Tetsu

    Applied Physics Letters   Vol. 115 ( 14 )   2019.9

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    DOI: 10.1063/1.5116866

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  29. Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination Reviewed

    Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    Applied Physics Letters   Vol. 115 ( 14 )   2019.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5114844

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  30. Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along the < 11(2)over-bar0 > direction Reviewed

    Maeda Takuya, Chi Xilun, Tanaka Hajime, Horita Masahiro, Suda Jun, Kimoto Tsunenobu

    Japanese Journal of Applied Physics   Vol. 58 ( 9 )   2019.9

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    DOI: 10.7567/1347-4065/ab3873

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  31. Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy Reviewed

    Kanegae Kazutaka, Fujikura Hajime, Otoki Yohei, Konno Taichiro, Yoshida Takehiro, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

    Applied Physics Letters   Vol. 115 ( 1 )   2019.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5098965

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  32. Shockley-Read-Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p-n(+) junction diodes Reviewed

    Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    Japanese Journal of Applied Physics   Vol. 58 ( SC )   2019.6

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    DOI: 10.7567/1347-4065/ab07ad

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  33. Acceptors activation of Mg-ion implanted GaN by ultra-high-pressure annealing Reviewed

    Sakurai H.

    19th International Workshop on Junction Technology, IWJT 2019     2019.6

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    DOI: 10.23919/IWJT.2019.8802621

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  34. Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination Reviewed

    Maeda Takuya, Narita Tetsuo, Ueda Hiroyuki, Kanechika Masakazu, Uesugi Tsutomu, Kachi Tetsu, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    IEEE Electron Device Letters   Vol. 40 ( 6 ) page: 941 - 944   2019.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/LED.2019.2912395

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  35. Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect Reviewed

    Maeda T.

    Proceedings of the 2019 31st International Symposium on Power Semiconductor Devices and ICs   Vol. 2019-May   page: 59 - 62   2019.5

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    DOI: 10.1109/ISPSD.2019.8757676

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  36. The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE Reviewed

    Narita Tetsuo, Tomita Kazuyoshi, Tokuda Yutaka, Kogiso Tatsuya, Horita Masahiro, Kachi Tetsu

    JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 21 )   2018.12

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    DOI: 10.1063/1.5057373

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  37. Phonon-assisted optical absorption due to Franz-Keldysh effect in 4H-SiC p-n junction diode under high reverse bias voltage Reviewed

    Maeda Takuya, Chi Xilun, Horita Masahiro, Suda Jun, Kimoto Tsunenobu

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 9 )   2018.9

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    DOI: 10.7567/APEX.11.091302

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  38. Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy Reviewed

    Kazutaka Kanegae, Masahiro Horita, Tsunenobu Kimoto, Jun Suda

    Applied Physics Express   Vol. 11 ( 7 )   2018.7

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    We propose an analysis method for the accurate estimation of the hole trap (H1, EV + 0.85 eV) concentration in n-type GaN via minority carrier transient spectroscopy (MCTS). The proposed method considers both the hole occupation during a filling (current injection) period and the quick carrier recombination via the hole traps near the depletion layer edge immediately after a reverse bias is applied. The reverse bias voltage dependence of the MCTS spectrum indicates that an accurate trap concentration, as well as the hole diffusion length and electron capture cross section of the hole trap, can be determined.

    DOI: 10.7567/APEX.11.071002

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  39. Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies Reviewed

    Kanegae Kazutaka, Kaneko Mitsuaki, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 7 )   2018.7

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    DOI: 10.7567/JJAP.57.070309

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  40. Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage Reviewed

    Takuya Maeda, Tetsuo Narita, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita, Jun Suda

    Applied Physics Letters   Vol. 112 ( 25 )   2018.6

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    Photocurrent induced by sub-bandgap light absorption due to the Franz-Keldysh effect was observed in GaN p-n junction diodes under a high reverse bias voltage. The photocurrent increased with the reverse bias voltage and the increase was found to be more significant as the wavelength approached the absorption edge of GaN. The photocurrent was calculated with consideration of light absorption induced by the Franz-Keldysh effect in the depletion layer. The calculated curves showed excellent agreement with the experimental curves. The photocurrent also increased with an increase in temperature and this could be quantitatively explained by the red-shift of the GaN absorption edge with the increase in temperature.

    DOI: 10.1063/1.5031215

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  41. Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations Reviewed

    Naoki Sawada, Tetsuo Narita, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Masahiro Horita, Tsunenobu Kimoto, Jun Suda

    Applied Physics Express   Vol. 11 ( 4 )   2018.4

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    The source of carrier compensation in metalorganic vapor phase epitaxy (MOVPE)-grown n-type GaN was quantitatively investigated by Halleffect measurement, deep-level transient spectroscopy, and secondary ion mass spectrometry. These analysis techniques revealed that there were at least three different compensation sources. The carrier compensation for samples with donor concentrations below 5 1016 cm3 can be explained by residual carbon and electron trap E3 (EC % 0.6 eV). For samples with higher donor concentrations, we found a proportional relationship between donor concentration and compensating acceptor concentration, which resulted from a third source of compensation. This is possibly due to the self-compensation effect.

    DOI: 10.7567/APEX.11.041001

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  42. Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination Reviewed

    2018 IEEE International Electron Devices Meeting (IEDM)     2018

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  43. Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates Invited Reviewed

    Horita M., Suda J.

    IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai     page: 86 - 87   2017.7

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    Hall-effect measurements for n-type and p-type GaN with low doping concentration are presented. The GaN layers were grown by metal-organic vapor phase epitaxy on hydride-vapor-phase-epitaxy-grown free-standing GaN substrates. For n-GaN, the origin of acceptor which compensating donor is not only C but also native defects for the Si doping concentration of 1016 cm-3 level. The electron mobility is mainly limited by ionized impurity scattering or polar optical phonon scattering in the temperature less or higher than 200 K, respectively. For p-GaN, lightly Mg doping of mid 1016 cm-3 was achieved, which shows the donor concentration of 3.2×1016 cm-3 and the mobility of 31 cm2/Vs at 300 K.

    DOI: 10.1109/IMFEDK.2017.7998055

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  44. Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors Reviewed

    Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Ikenoue, Yukiharu Uraoka

    Japanese Journal of Applied Physics   Vol. 56 ( 5 )   2017.5

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    The formation of perhydropolysilazane (PHPS)-based SiO2 films by CO2 laser annealing is proposed. Irradiation with a CO2 laser with optimum fluence transformed a prebaked PHPS film into a SiO2 film with uniform composition in the thickness direction. Polycrystalline silicon thin-film transistors (poly-Si TFTs) with a SiO2 film as the gate insulator were fabricated. When the SiO2 film was formed by CO2 laser annealing (CO(2)LA) at the optimum fluence of 20mJ/cm(2), the film had fewer OH groups which was one-twentieth that of the furnace annealed PHPS film and one-hundredth that of the SiO2 film deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethyl orthosilicate (TEOS). The resulting TFTs using PHPS showed a clear transistor operation with a field-effect mobility of 37.9 +/- 1.2 cm(2)V(-1)s(-1), a threshold voltage of 9.8 +/- 0.2 V, and a subthreshold swing of 0.76 +/- 0.02 V/decade. The characteristics of such TFTs were as good as those of a poly-Si TFT with a SiO2 gate insulator prepared by PECVD using TEOS. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.56.056503

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  45. Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode Reviewed

    Takuya Maeda, Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto, Tsunenobu Kimoto, Masahiro Horita, Jun Suda

    Applied Physics Express   Vol. 10 ( 5 )   2017.5

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    The temperature dependence of barrier height in a Ni/n-GaN Schottky barrier diode fabricated on a GaN homoepitaxial layer was investigated by capacitance-voltage, current-voltage, and internal photoemission measurements in the range of 223-573 K. The barrier height obtained by these methods linearly decreased with increasing temperature. The temperature coefficient was -(1.7-2.3) x 10(-4) eV/K, which is about half of the temperature coefficient of the band gap reported previously. This indicates that the decrease in the barrier height may mainly reflect the shrinkage of the band gap (lowering of the conduction band edge) in GaN with increasing temperature. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/APEX.10.051002

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  46. Characterization of lightly-doped n- and p-type homoepitaxial GaN on free-standing substrates Invited Reviewed

    Horita Masahiro, Suda Jun

    2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)     page: 86 - 87   2017

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MISC 61

  1. Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors Reviewed

    Hishitani Daisuke, Horita Masahiro, Ishikawa Yasuaki, Ikenoue Hiroshi, Uraoka Yukiharu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.056503

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  2. Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode Reviewed

    Maeda Takuya, Okada Masaya, Ueno Masaki, Yamamoto Yoshiyuki, Kimoto Tsunenobu, Horita Masahiro, Suda Jun

    APPLIED PHYSICS EXPRESS   Vol. 10 ( 5 )   2017.5

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    DOI: 10.7567/APEX.10.051002

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  3. Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations Reviewed

    Horita Masahiro, Takashima Shinya, Tanaka Ryo, Matsuyama Hideaki, Ueno Katsunori, Edo Masaharu, Takahashi Tokio, Shimizu Mitsuaki, Suda Jun

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 3 )   2017.3

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    DOI: 10.7567/JJAP.56.031001

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  4. Franz-Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage (vol 9, 091002, 2016) Reviewed

    Maeda Takuya, Okada Masaya, Ueno Masaki, Yamamoto Yoshiyuki, Horita Masahiro, Suda Jun

    APPLIED PHYSICS EXPRESS   Vol. 9 ( 10 )   2016.10

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    DOI: 10.7567/APEX.9.109201

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  5. Franz-Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage Reviewed

    Maeda Takuya, Okada Masaya, Ueno Masaki, Yamamoto Yoshiyuki, Horita Masahiro, Suda Jun

    APPLIED PHYSICS EXPRESS   Vol. 9 ( 9 )   2016.9

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    DOI: 10.7567/APEX.9.091002

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  6. Interfacial atomic site characterization by photoelectron diffraction for 4H-AlN/4H-SiC(11(2)over-bar0) heterojunction Reviewed

    Maejima Naoyuki, Horita Masahiro, Matsui Hirosuke, Matsushita Tomohiro, Daimon Hiroshi, Matsui Fumihiko

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 8 )   2016.8

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    DOI: 10.7567/JJAP.55.085701

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  7. Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation Reviewed

    Kulchaisit Chaiyanan, Ishikawa Yasuaki, Fujii Mami N., Yamazaki Haruka, Bermundo Juan Paolo Soria, Ishikawa Satoru, Miyasako Takaaki, Katsui Hiromitsu, Tanaka Kei, Hamada Ken-ichi, Horita Masahiro, Uraoka Yukiharu

    JOURNAL OF DISPLAY TECHNOLOGY   Vol. 12 ( 3 )   2016.3

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    DOI: 10.1109/JDT.2015.2475127

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  8. High Pressures Water Vapor Annealing for Atomic-Layer-Deposited Al2O3 on GaN Reviewed

    Yoshitugu Koji, Horita Masahiro, Uenuma Mustunori, Ishikawa Yasuaki, Uraoka Yukiharu

    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)     page: .   2016

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  9. Characterization of N-Type and P-Type GaN Layers Grown on Free-Standing GaN Substrates Reviewed

    Suda Jun, Horita Masahiro

    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)     page: .   2016

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  10. Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing Reviewed

    Asubar Joel T., Kobayashi Yohei, Yoshitsugu Koji, Yatabe Zenji, Tokuda Hirokuni, Horita Masahiro, Uraoka Yukiharu, Hashizume Tamotsu, Kuzuhara Masaaki

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 62 ( 8 ) page: 2423-2428   2015.8

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    DOI: 10.1109/TED.2015.2440442

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  11. Thermo-stable carbon nanotube-TiO2 nanocompsite as electron highways in dye-sensitized solar cell produced by bio-nano-process Reviewed

    Inoue Ippei, Yamauchi Hirofumi, Okamoto Naofumi, Toyoda Kenichi, Horita Masahiro, Ishikawa Yasuaki, Yasueda Hisashi, Uraoka Yukiharu, Yamashita Ichiro

    NANOTECHNOLOGY   Vol. 26 ( 28 )   2015.7

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  12. Floating gate memory with charge storage dots array formed by Dps protein modified with site-specific binding peptides Reviewed

    Kamitake Hiroki, Uenuma Mutsunori, Okamoto Naofumi, Horita Masahiro, Ishikawa Yasuaki, Yamashita Ichro, Uraoka Yukiharu

    NANOTECHNOLOGY   Vol. 26 ( 19 )   2015.5

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  13. Unseeded Growth of Poly-Crystalline Ge with (111) Surface Orientation on Insulator by Pulsed Green Laser Annealing Reviewed

    Horita Masahiro, Takao Toru, Nieda Yoshiaki, Ishikawa Yasuaki, Sasaki Nobuo, Uraoka Yukiharu

    2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)     page: 237-240   2015

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  14. Analysis of self-heating phenomenon in oxide thin-film transistors under pulsed bias voltage Reviewed

    Kise Kahori, Tomai Shigekazu, Yamazaki Haruka, Urakawa Satoshi, Yano Koki, Wang Dapeng, Furuta Mamoru, Horita Masahiro, Fujii Mami, Ishikawa Yasuaki, Uraoka Yukiharu

    2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)     page: 249-251   2015

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  15. Analysis of printed silver electrode on amorphous indium gallium zinc oxide Reviewed

    Ueoka Yoshihiro, Nishibayashi Takahiro, Ishikawa Yasuaki, Yamazaki Haruka, Osada Yukihiro, Horita Masahiro, Uraoka Yukiharu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 53 ( 4 )   2014.4

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    DOI: 10.7567/JJAP.53.04EB03

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  16. Effect of contact material on amorphous InGaZnO thin-film transistor characteristics Reviewed

    Ueoka Yoshihiro, Ishikawa Yasuaki, Bermundo Juan Paolo, Yamazaki Haruka, Urakawa Satoshi, Osada Yukihiro, Horita Masahiro, Uraoka Yukiharu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 53 ( 3 )   2014.3

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    DOI: 10.7567/JJAP.53.03CC04

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  17. 4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (11(2)over-bar0) Reviewed

    Horita Masahiro, Noborio Masato, Kimoto Tsunenobu, Suda Jun

    IEEE ELECTRON DEVICE LETTERS   Vol. 35 ( 3 ) page: 339-341   2014.3

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    DOI: 10.1109/LED.2014.2299557

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  18. Analysis of heating phenomenon in oxide thin-film transistor under pulse voltage stress Reviewed

    Kise Kahori, Fujii Mami, Tomai Shigekazu, Ueoka Yoshihiro, Yamazaki Haruka, Urakawa Satoshi, Yano Koki, Wang Dapeng, Furuta Mamoru, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

    2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)     page: .   2014

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  19. Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress Reviewed

    Ueoka Yoshihiro, Ishikawa Yasuaki, Bermundo Juan Paolo, Yamazaki Haruka, Urakawa Satoshi, Fujii Mami, Horita Masahiro, Uraoka Yukiharu

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 3 ( 9 ) page: Q3001-Q3004   2014

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    DOI: 10.1149/2.001409jss

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  20. Vapor-Induced Improvements in Field Effect Mobility of Transparent a-IGZO TFTs Reviewed

    Fujii Mami N., Ishikawa Yasuaki, Horita Masahiro, Uraoka Yukiharu

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 3 ( 9 ) page: Q3050-Q3053   2014

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    DOI: 10.1149/2.011409jss

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  21. Reliability of Bottom Gate Amorphous InGaZnO Thin-Film Transistors with Siloxane Passivation Layer Reviewed

    Kulchaisit Chaiyanan, Fujii Mami, Ueoka Yoshihiro, Bermundo Juan Paolo, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

    2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)     page: .   2014

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  22. Crystallization of amorphous Ge thin film using Cu nanoparticle synthesized and delivered by ferritin Reviewed

    Uenuma Mutsunori, Zheng Bin, Bundo Kosuke, Horita Masahiro, Ishikawa Yasuaki, Watanabe Heiji, Yamashita Ichiro, Uraoka Yukiharu

    JOURNAL OF CRYSTAL GROWTH   Vol. 382   page: 31-35   2013.11

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  23. Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature Reviewed

    Machida Emi, Horita Masahiro, Yamasaki Koji, Ishikawa Yasuaki, Uraoka Yukiharu, Ikenoue Hiroshi

    JOURNAL OF DISPLAY TECHNOLOGY   Vol. 9 ( 9 ) page: 741-746   2013.9

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    DOI: 10.1109/JDT.2012.2236883

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  24. Effects of Gate Insulator on Thin-Film Transistors With ZnO Channel Layer Deposited by Plasma-Assisted Atomic Layer Deposition Reviewed

    Kawamura Yumi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

    JOURNAL OF DISPLAY TECHNOLOGY   Vol. 9 ( 9 ) page: 694-698   2013.9

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    DOI: 10.1109/JDT.2012.2213237

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  25. Thermal reversibility in electrical characteristics of ultraviolet/ozone-treated graphene Reviewed

    Mulyana Yana, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu, Koh Shinji

    APPLIED PHYSICS LETTERS   Vol. 103 ( 6 )   2013.8

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    DOI: 10.1063/1.4818329

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  26. Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing Reviewed

    Fujii Mami, Ishikawa Yasuaki, Ishihara Ryoichi, van der Cingel Johan, Mofrad Mohammad R. T., Horita Masahiro, Uraoka Yukiharu

    APPLIED PHYSICS LETTERS   Vol. 102 ( 12 )   2013.3

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    DOI: 10.1063/1.4798519

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  27. Fabrication of Zinc Oxide Nanopatterns by Quick Gel-Nanoimprint Process toward Optical Switching Devices Reviewed

    Araki Shinji, Ishikawa Yasuaki, Zhang Min, Doe Takahiro, Lu Li, Horita Masahiro, Nishida Takashi, Uraoka Yukiharu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 3 )   2013.3

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    DOI: 10.7567/JJAP.52.03BA02

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  28. Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect Reviewed

    Urakawa Satoshi, Tomai Shigekazu, Ueoka Yoshihiro, Yamazaki Haruka, Kasami Masashi, Yano Koki, Wang Dapeng, Furuta Mamoru, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

    APPLIED PHYSICS LETTERS   Vol. 102 ( 5 )   2013.2

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    DOI: 10.1063/1.4790619

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  29. Forming SiO2 Thin Film by CO2 Laser Annealing of Spin-On Glass on Polycrystalline Silicon Thin Film Reviewed

    Hishitani Daisuke, Horita Masahiro, Ishikawa Yasuaki, Ikenoue Hiroshi, Watanabe Yosuke, Uraoka Yukiharu

    PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS     page: 163-166   2013

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  30. Memristive nanoparticles formed using a biotemplate Reviewed

    Uenuma Mutsunori, Ban Takahiko, Okamoto Naofumi, Zheng Bin, Kakihara Yasuhiro, Horita Masahiro, Ishikawa Yasuaki, Yamashita Ichiro, Uraoka Yukiharu

    RSC ADVANCES   Vol. 3 ( 39 ) page: 18044-18048   2013

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    DOI: 10.1039/c3ra42392a

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  31. Forming of SiO2 Film by Spin-On Glass and CO2 Laser Annealing for Gate Insulator of Polycrystalline Silicon Thin Film Transistors Reviewed

    Hishitani Daisuke, Horita Masahiro, Ishikawa Yasuaki, Ikenoue Hiroshi, Watanabe Yosuke, Uraoka Yukiharu

    2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013)     page: .   2013

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  32. Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition Reviewed

    Yoshitsugu Koji, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11   Vol. 10 ( 11 ) page: 1426-1429   2013

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    DOI: 10.1002/pssc.201300273

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  33. Thermal distribution in amorphous InSnZnO thin-film transistor Reviewed

    Urakawa Satoshi, Tomai Shigekazu, Ueoka Yoshihiro, Yamazaki Haruka, Kasami Masashi, Yano Koki, Wang Dapeng, Furuta Mamoru, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11   Vol. 10 ( 11 ) page: 1561-1564   2013

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    DOI: 10.1002/pssc.201300253

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  34. Unique property of a-InGaZnO/Ag Interface on Thin-Film Transistor Reviewed

    Ueoka Yoshihiro, Ishikawa Yasuaki, Bermundo Juan Paolo, Yamazaki Haruka, Urakawa Satoshi, Osada Yukihiro, Horita Masahiro, Uraoka Yukiharu

    PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS     page: 37-38   2013

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  35. Thermal Degradation and Theoretical Analysis of Amorphous Oxide Thin-Film Transistor Reviewed

    Urakawa Satoshi, Tomai Shigekazu, Kasami Masashi, Yano Koki, Wang Dapeng, Furuta Mamoru, Kimura Mutsumi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

    PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS     page: 125-128   2013

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  36. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing Reviewed

    Machida Emi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu, Ikenoue Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 101 ( 25 )   2012.12

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    DOI: 10.1063/1.4772513

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  37. Size Control of ZnS Nanoparticles by Electro-Spray Deposition Method Reviewed

    Doe Takahiro, Ishikawa Yasuaki, Horita Masahiro, Nishida Takashi, Uraoka Yukiharu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 51 ( 3 )   2012.3

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    DOI: 10.1143/JJAP.51.03CC02

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  38. Thin-Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing Reviewed

    Yamasaki Koji, Machida Emi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 51 ( 3 )   2012.3

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    DOI: 10.1143/JJAP.51.03CA03

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  39. Guided filament formation in NiO-resistive random access memory by embedding gold nanoparticles Reviewed

    Uenuma Mutsunori, Zheng Bin, Kawano Kentaro, Horita Masahiro, Ishikawa Yasuaki, Yamashita Ichiro, Uraoka Yukiharu

    APPLIED PHYSICS LETTERS   Vol. 100 ( 8 )   2012.2

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    DOI: 10.1063/1.3688053

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  40. Metal-nanoparticle-induced crystallization of amorphous Ge film using ferritin Reviewed

    Uenuma Mutsunori, Zheng Bin, Imazawa Takanori, Horita Masahiro, Nishida Takashi, Ishikawa Yasuaki, Watanabe Heiji, Yamashita Ichiro, Uraoka Yukiharu

    APPLIED SURFACE SCIENCE   Vol. 258 ( 8 ) page: 3410-3414   2012.2

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  41. Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition Reviewed

    Kawamura Yumi, Tani Mai, Hattori Nozomu, Miyatake Naomasa, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 51 ( 2 )   2012.2

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    Language:English  

    DOI: 10.1143/JJAP.51.02BF04

    Web of Science

  42. Analysis of Electronic Structural Change in a-InGaZnO by High Pressure Water Vapor Annealing Reviewed

    Ueoka Yoshihiro, Mejima Naoyuki, Matsui Hirosuke, Matsui Fumihiko, Morita Makoto, Kitagawa Satoshi, Fujita Masayoshi, Yasuda Kaoru, Yamazaki Haruka, Urakawa Satoshi, Horita Masahiro, Ishikawa Yasuaki, Daimon Hiroshi, Uraoka Yukiharu

    IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2   Vol. 19   page: 887-890   2012

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    Web of Science

  43. Super Low-Temperature Formation of Polycrystalline Silicon Films on Plastic Substrates by Underwater Laser Annealing Reviewed

    Machida Emi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu, Okuyama Tetsuo, Ikenoue Hiroshi

    IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 1   Vol. 19   page: 303-306   2012

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    Web of Science

  44. Fabrication of Zinc Oxide Nano-patterns by Quick Gel-nanoimprint Process toward Optical Switching Devices Reviewed

    Araki Shinji, Zhang Min, Doe Takahiro, Lu Li, Horita Masahiro, Nishida Takashi, Ishikawa Yasuaki, Uraoka Yukiharu

    2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS     page: 29-32   2012

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    Web of Science

  45. Crystallization to Polycrystalline Silicon Films by Underwater Laser Annealing and Its Application to Thin Film Transistors Reviewed

    Machida Emi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu, Ikenoue Hiroshi

    2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS     page: 111-114   2012

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    Language:English  

    Web of Science

  46. Effects of Gate Insulator on Thin Film Transistor with ZnO Channel Layer Deposited by Plasma Assisted Atomic Layer Deposition Reviewed

    Kawamura Yumi, Horita Masahiro, Ishikawa Yasuaki, Uraoka Yukiharu

    2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS     page: 179-182   2012

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    Language:English  

    Web of Science

  47. Cu nanoparticle induced crystallization of amorphous Ge film using ferritin Reviewed

    Uenuma Mutsunori, Zheng Bin, Bundo Kosuke, Horita Masahiro, Ishikawa Yasuaki, Yamashita Ichiro, Uraoka Yukiharu

    2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS     page: 227-230   2012

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    Language:English  

    Web of Science

  48. Unique Phenomenon in Degradation of Amorphous In2O3-Ga2O3-ZnO Thin-Film Transistors under Dynamic Stress Reviewed

    Fujii Mami, Ishikawa Yasuaki, Horita Masahiro, Uraoka Yukiharu

    APPLIED PHYSICS EXPRESS   Vol. 4 ( 10 )   2011.10

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    Language:English  

    DOI: 10.1143/APEX.4.104103

    Web of Science

  49. Anomalously low Ga incorporation in high Al-content AlGaN grown on (11(2)over-bar0) non-polar plane by molecular beam epitaxy Reviewed

    Ueta Shunsaku, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 208 ( 7 ) page: 1498-1500   2011.7

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    Language:English  

    DOI: 10.1002/pssa.201001033

    Web of Science

  50. Resistive random access memory utilizing ferritin protein with Pt nanoparticles Reviewed

    Uenuma Mutsunori, Kawano Kentaro, Zheng Bin, Okamoto Naofumi, Horita Masahiro, Yoshii Shigeo, Yamashita Ichiro, Uraoka Yukiharu

    NANOTECHNOLOGY   Vol. 22 ( 21 )   2011.5

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  51. ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition Reviewed

    Kawamura Yumi, Hattori Nozomu, Miyatake Naomasa, Horita Masahiro, Uraoka Yukiharu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 4 )   2011.4

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    DOI: 10.1143/JJAP.50.04DF05

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  52. Resistive Memory Utilizing Ferritin Protein with Nano Particle Reviewed

    Uenuma Mutsunori, Kawano Kentaro, Zheng Bin, Horita Masahiro, Yoshii Shigeo, Yamashita Ichiro, Uraoka Yukiharu

    TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS   Vol. 470   page: 92-97   2011

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  53. Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiCd(1(1)over-bar00) Reviewed

    Horita Masahiro, Kimoto Tsunenobu, Suda Jun

    APPLIED PHYSICS EXPRESS   Vol. 3 ( 5 )   2010

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    Language:English  

    DOI: 10.1143/APEX.3.051001

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  54. Effect of Post-Thermal Annealing of Thin-Film Transistors with ZnO Channel Layer Fabricated by Atomic Layer Deposition Reviewed

    Kawamura Yumi, Horita Masahiro, Uraoka Yukiharu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 49 ( 4 )   2010

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    Language:English  

    DOI: 10.1143/JJAP.49.04DF19

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  55. Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (11(2)over-bar0) and (1(1)over-bar00) Planes under Group-III-Rich Conditions Reviewed

    Horita Masahiro, Kimoto Tsunenobu, Suda Jun

    APPLIED PHYSICS EXPRESS   Vol. 2 ( 9 )   2009.9

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    DOI: 10.1143/APEX.2.091003

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  56. Observation of novel defect structure in 2H-AlN grown on 6H-SiC(0001) substrates with 3-bilayer-height step-and-terrace structures Reviewed

    Okumura Hironori, Horita Masahiro, Kimoto Tsunenobu, Suda Jun

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 206 ( 6 ) page: 1187-1189   2009.6

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    DOI: 10.1002/pssa.200880934

    Web of Science

  57. Polytype Replication in Heteroepitaxial Growth of Nonpolar AlN on SiC Reviewed

    Suda Jun, Horita Masahiro

    MRS BULLETIN   Vol. 34 ( 5 ) page: 348-352   2009.5

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    Web of Science

  58. Surface Morphologies of 4H-SiC(11(2)over-bar0) and (1(1)over-bar00) Treated by High-Temperature Gas Etching Reviewed

    Horita Masahiro, Kimoto Tsunenobu, Suda Jun

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 47 ( 11 ) page: 8388-8390   2008.11

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    DOI: 10.1143/JJAP.47.8388

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  59. Nonpolar 4H-AlN grown on 4H-SiC (1(1)over-bar00) with reduced stacking fault density realized by persistent layer-by-layer growth Reviewed

    Horita Masahiro, Kimoto Tsunenobu, Suda Jun

    APPLIED PHYSICS LETTERS   Vol. 93 ( 8 )   2008.8

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    DOI: 10.1063/1.2976559

    Web of Science

  60. High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy Reviewed

    Horita Masahiro, Suda Jun, Kimoto Tsunenobu

    APPLIED PHYSICS LETTERS   Vol. 89 ( 11 )   2006.9

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    DOI: 10.1063/1.2352713

    Web of Science

  61. Growth of nonpolar AIN and AlGaN on 4H-SiC (1-100) by molecular beam epitaxy Reviewed

    Armitage Rob, Horita Masahiro, Kimoto Tsunenobu

    GaN, AIN, InN and Related Materials   Vol. 892   page: 705-710   2006

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    Web of Science

▼display all

Presentations 114

  1. 酸素イオン注入によりn型GaN中に形成される電子トラップ

    柴田優一,堀田昌宏,田中亮,高島信也,上野勝典,須田淳

    第68回応用物理学会春季学術講演会 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  2. MOVPE成長n型GaNに存在するE3トラップの起源検討

    堀田昌宏,成田哲生,加地徹,須田淳

    第81回応用物理学会秋季学術講演会 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  3. 電子線照射によりホモエピタキシャル成長n型GaN中に形成されるホールトラップの照射エネルギー依存性

    遠藤 彗,鐘ヶ江 一孝,堀田 昌宏,須田 淳

    第65回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  4. Nitrogen and gallium displacement related deep levels introduced by electron-beam irradiation in MOVPE-grown homoepitaxial n-type GaN

    M. Horita, J. Suda

    第38回電子材料シンポジウム 

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    Event date: 2019.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  5. Evaluation of hole traps introduced by electron beam irradiation in homoepitaxial n-type GaN

    M. Endo, K. Kanegae, M. Horita, J. Suda

    第38回電子材料シンポジウム 

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    Event date: 2019.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  6. 電子線照射によりホモエピタキシャル成長n型GaN中に形成される深い準位の低温における挙動

    遠藤彗, 堀田昌宏, 須田淳

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  7. GaN -MOSFETのHall測定

    上野勝典, 松山秀昭, 田中亮, 高島信也, 江戸雅晴, 堀田昌宏, 須田淳, 中川清和

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  8. ホモエピタキシャル成長n型GaN中に2 MeV電子線照射により形成される深い準位

    堀田昌宏, 成田哲生, 加地徹, 上杉勉, 須田淳

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  9. DLTSおよびHall測定による GaNエピ層の欠陥準位評価 Invited

    堀田昌宏, 須田淳

    第6回パワーデバイス用Siおよび関連半導体材料に関する研究会 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  10. Deep levels introduced by electron beam irradiation in the energy range from 100 keV to 2 MeV in MOVPE-grown homoepitaxial n-type GaN International conference

    M. Horita, T. Narita, T. Kachi, T. Uesugi, J. Suda

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

  11. Energy dependence of deep level formation by electron-beam irradiation in homoepitaxial n-type GaN

    M. Horita, J. Suda

    第37回電子材料シンポジウム 

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    Event date: 2018.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  12. 電子線照射によりホモエピタキシャル成長n型GaN中に形成される深い準位の形成エネルギーしきい値

    堀田昌宏, 須田淳

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  13. マルチウェハリアクタによって4インチサファイア基板上にMOVPE成長した低ドープn型GaNの実効ドナー密度分布

    坂尾佳祐, 堀田昌宏, 須田淳, 朴冠錫, 山岡優哉, 矢野良樹, 松本功

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  14. Si-doped GaN Growth as a Drift Layer of Vertical Power Devices by Using Production Scale Metalorganic Chemical Vapor Deposition International conference

    G. Piao, Y. Yano, Y. Yamaoka, T. Tabuchi, K. Matsumoto, K. Sakao, K. Kanegae, M. Horita, J. Suda

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

  15. Nitrogen-displacement-related hole traps in homoepitaxial p-type GaN

    Meguru Endo, Masahiro Horita, Jun Suda

    2021.9.11 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  16. Characterization of a photoionization cross section ratios of electron traps in n-type GaN by optical ICTS using sub-bandgap-light irradiation

    Meguru Endo, Masahiro Horita, Jun Suda

    2022.3.23 

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    Event date: 2022.3 - 3033.3

    Presentation type:Oral presentation (general)  

  17. Effective Vertical Field Dependence of Hall Mobility for SiC MOSFETs with Various Gate Oxides

    Koji Ito, Masahiro Horita, Jun Suda, Tsunenobu Kimoto

    2022.3.24 

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    Event date: 2022.3 - 3033.3

    Presentation type:Oral presentation (general)  

  18. Origin of peak observed in reverse current-voltage characteristics of homoepitaxial GaN pn junction mesa diodes

    Takuto Ohashi, Masakazu Kanechika, Takeshi Kondo, Tsutomu Uesugi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda

    2022.3.23 

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    Event date: 2022.3 - 3033.3

    Presentation type:Oral presentation (general)  

  19. Annealing temperature dependence of depth distribution of net donor density in ultra-low concentration Si-ion implanted GaN

    Hiroko Iguchi, Masahiro Horita, Jun Suda

    2022.3.23 

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    Event date: 2022.3 - 3033.3

    Presentation type:Oral presentation (general)  

  20. AlSiOゲート酸化膜を用いたGaNパワーMOSFETの進展と課題 Invited

    成田 哲生, 伊藤 健治, 菊田 大悟, 冨田 一義, 堀田 昌宏, 加地 徹

    第27回 電子デバイス界面テクノロジー研究会  2022.1.29 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  21. Reduction of Temperature and Pressure in Ultra-High-Pressure Annealing for Activation of Mg-Implanted ptype GaN

    The 8th Meeting on Advanced Power Semiconductors  2021.12.9 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Poster presentation  

  22. Origin of Hysteresis in Reverse Current-Voltage Characteristics of GaN pn Junction Mesa Diodes

    The 8th Meeting on Advanced Power Semiconductors  2021.12.9 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Poster presentation  

  23. Dependence of Channel Mobility on Doping Concentration of p-body in Phosphorus-Treated SiC MOSFETs

    The 8th Meeting on Advanced Power Semiconductors  2021.12.10 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Poster presentation  

  24. Hole traps formed by gamma-ray irradiation in homoepitaxial p-type GaN International conference

    Keito Aoshima, Masahiro Horita, and Jun Suda

    International Conference on Materials and Systems for Sustainability 2021 

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    Event date: 2021.11

    Language:English   Presentation type:Poster presentation  

  25. Isothermal Annealing Study on Mg-implanted Homoepitaxial GaN International conference

    Kensuke Sumida, Kazufumi Hirukawa, Hideki Sakurai, Masahiro Horita, Michal Bockowski, Tetsu Kachi, Jun Suda

    International Conference on Materials and Systems for Sustainability 2021 

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    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

  26. Investigation of Electron Traps in Homoepitaxial n-type GaN Grown by MOVPE International conference

    Masahiro Horita and Jun Suda

    International Conference on Materials and Systems for Sustainability 2021  2021.11.6 

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    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

  27. Nitrogen-displacement-related Hole Traps in N-type GaN with Electron Beam Irradiations in the Energy Range from 100 to 400 keV International conference

    Meguru Endo, Masahiro Horita, Kazutaka Kanegae, and Jun Suda

    International Conference on Materials and Systems for Sustainability 2021 

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    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

  28. Universal Mobility in SiC MOSFETs with Very Low Interface State Density International conference

    Koji Ito, Masahiro Horita, Jun Suda, Tsunenobu Kimoto

    13th European Conference on Silicon Carbide and Related Materials  2021.10.26 

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (general)  

  29. Nitrogen-displacement-related hole traps in MOVPE-grown homoepitaxial p-type GaN

    Meguru Endo, Masahiro Horita, Jun Suda

    The 40th Electronic Materials Symposium  2021.10.11 

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    Event date: 2021.10

    Language:English   Presentation type:Poster presentation  

  30. SiO2/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method International conference

    Keito Aoshima, Noriyuki Taoka, Masahiro Horita, Jun Suda

    2021 International Conference on Solid State Devices and Materials  2021.9.9 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (general)  

  31. Nitrogen-displacement-related hole traps introduced by electron beam irradiations in MOVPE-grown homoepitaxial p-type GaN International conference

    Meguru Endo, Masahiro Horita, and Jun Suda

    31st International Conference on Defects in Semiconductors  2021.7.26  31st International Conference on Defects in Semiconductors Conference Committees

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    Event date: 2021.7

    Language:English   Presentation type:Poster presentation  

    Venue:University of Oslo   Country:Norway  

  32. AlSiO/p型GaN MOSFETにおける移動度制限因子の解析

    成田哲生,伊藤健治,冨田一義,堀田昌宏,菊田大悟

    第68回応用物理学会春季学術講演会 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  33. GaNにおける電子・正孔の衝突イオン化係数の温度依存性

    前田拓也,成田哲生,山田真嗣,加地徹,木本恒暢,堀田昌宏,須田淳

    第68回応用物理学会春季学術講演会 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  34. リン処理を施したSiC MOSFETにおける実効移動度のボディ電位依存性

    伊藤滉二,堀田昌宏,須田淳,木本恒暢

    第68回応用物理学会春季学術講演会 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  35. DLTS法によるn型GaN中の深い準位評価に対してショットキー障壁高さが与える影響の定量的解析

    青島慶人,堀田昌宏,須田淳

    第68回応用物理学会春季学術講演会 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  36. Mgイオン注入GaNの超高圧アニールによるMgとHの熱拡散

    櫻井秀樹,成田哲生,晝川十史,角田健輔,山田真嗣,片岡恵太,堀田昌宏,五十嵐信行,M. Bockowski,須田淳,加地徹

    第68回応用物理学会春季学術講演会 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  37. Mgイオン注入p型GaNにおける超高圧アニール温度の低減化に向けた検討

    晝川十史,櫻井秀樹,藤倉序章,堀田昌宏,M. Bockowski,乙木洋平,加地徹,須田淳

    第68回応用物理学会春季学術講演会 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  38. MOVPE法によるn型GaNドリフト層形成と残留不純物制御 Invited

    成田哲生,堀田昌宏,冨田一義,加地徹,須田淳

    第49回結晶成長国内会議 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  39. 超高圧アニールを用いたMgイオン注入GaNのp型伝導制御 Invited

    櫻井秀樹,成田哲生,晝川十史,山田真嗣,片岡恵太,Malgorzata Iwinska,堀田昌宏,五十嵐信行,Michal Bockowski,須田淳,加地徹

    第49回結晶成長国内会議 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  40. Hole Traps Introduced by Electron Beam Irradiation in Homoepitaxial n-type GaN and Its Irradiation Energy Dependence

    M. Endo, M. Horita, K. Kanegae, J. Suda

    第39回電子材料シンポジウム 

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    Event date: 2020.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  41. Impact of The Schottky Barrier Height on Deep-level Transient Spectroscopy of Gamma-ray-irradiated ntype GaN

    K. Aoshima, M. Horita, J. Suda

    第39回電子材料シンポジウム 

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    Event date: 2020.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  42. Impacts of High Temperature Annealing Above 1400 degree C Under N2 Overpressure to Activate Acceptors in Mg-Implanted GaN International conference

    H. Sakurai, T. Narita, K. Hirukawa, S. Yamada, A. Koura, K. Kataoka, M. Horita, N. Ikarashi, M. Bockowski, J. Suda, T. Kachi

    2020 32nd International Symposium on Power Semiconductor Devices and ICs 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

  43. DLTS法によるAl2O3/n型GaN MOS界面準位の評価

    青島 慶人,堀田 昌宏,須田 淳,橋詰 保

    第65回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  44. 常圧で活性化熱処理したMg注入GaN層のホール効果測定

    田中 亮,高島 信也,上野 勝典,江戸 雅晴,堀田 昌宏,須田 淳

    第65回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  45. SiNキャップ層高温熱処理によりGaN表面付近に導入される電子トラップの深さ方向分布の熱処理時間依存性

    古田 悟夢,堀田 昌宏,田中 成明,岡 徹,須田 淳

    第65回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  46. GaNの電子・正孔の衝突イオン化係数の測定

    前田 拓也,成田 哲生,山田 真嗣,加地 徹,木本 恒暢,堀田 昌宏,須田 淳

    第65回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  47. リン処理を施したSiC(0001)/SiO2界面における反転層電子のユニバーサル移動度の評価

    伊藤 滉二,堀田 昌宏,須田 淳,木本 恒暢

    第65回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  48. RIEによって生成されたn型GaN中の深い準位

    鐘ヶ江 一孝,山田 真嗣,堀田 昌宏,木本 恒暢,須田 淳

    第65回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  49. 超高圧アニールによるMg&Nシーケンシャルイオン注入GaNのアクセプタ形成の実証

    櫻井 秀樹,成田 哲生,晝川 十史,山田 真嗣,高良 昭彦,片岡 恵太,堀田 昌宏,Bockowski Michal,須田 淳,加地 徹

    第65回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  50. Mgイオン注入p型GaNの超高圧アニール温度の検討

    晝川 十史,櫻井 秀樹,藤倉 序章,堀田 昌宏,Bockowski Michal,乙木 洋平,加地 徹,須田 淳

    第65回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  51. 光過渡容量分光法によるn型GaN中の正孔トラップ密度の高速かつ精密定量手法

    鐘ヶ江 一孝,成田 哲生,冨田 一義,加地 徹,堀田 昌宏,木本 恒暢,須田 淳

    先進パワー半導体分科会第6回講演会 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

  52. PMA処理を行ったAl2O3/n-GaN MOSダイオードにおいてガンマ線照射により形成されるAl2O3膜中及び界面トラップ

    青島慶人,堀田昌宏,金木奨太,須田淳,橋詰保

    先進パワー半導体分科会第6回講演会 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

  53. Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p−/n+ Junction International conference

    T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita, J. Suda

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

  54. Record breakdown fields of 2.8-3.5 MV/cm in GaN p-n junction diodes

    T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

    第38回電子材料シンポジウム 

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    Event date: 2019.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  55. Development of accurate and quick measurement method for hole trap density in n-type GaN layers by optical isothermal capacitance transient spectroscopy

    K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

    第38回電子材料シンポジウム 

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    Event date: 2019.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  56. Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN

    K. Aoshima, K. Kanegae, M. Horita, J. Suda

    第38回電子材料シンポジウム 

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    Event date: 2019.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  57. Depth Profiles of Deep Levels Generated by ICP-RIE in 4H-SiC International conference

    K. Kanegae, T. Okuda, M. Horita, J. Suda, T. Kimoto

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    Event date: 2019.10

    Language:English   Presentation type:Oral presentation (general)  

  58. Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction International conference

    T. Maeda, X. Chi, H. Tanaka, M. Horita, J. Suda, T. Kimoto

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    Event date: 2019.10

    Language:English   Presentation type:Oral presentation (general)  

  59. リン処理を施したSiC MOSFETにおけるチャネル移動度のボディ層アクセプタ密度依存性

    伊藤 滉二,堀田 昌宏,須田 淳,木本 恒暢

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  60. 2 色のサブバンドギャップ光を用いた過渡容量分光法によるn型GaN成長層中の炭素関連欠陥密度の高速定量手法

    鐘ヶ江 一孝,成田 哲生,冨田 一義,加地 徹,堀田 昌宏,木本 恒暢,須田 淳

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  61. <11-20>方向に電界印加した4H-SiC p-n接合ダイオードにおけるFranz-Keldysh効果に起因したフォノンアシスト光吸収

    前田 拓也,遅 熙倫,田中 一,堀田 昌宏,須田 淳,木本 恒暢

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  62. PMA処理を行ったAl2O3/GaN MOSダイオードにおけるガンマ線照射によるフラットバンド電圧の負方向シフトの膜厚依存性

    青島 慶人,堀田 昌宏,金木 奨太,須田 淳,橋詰 保

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  63. 様々な電極金属のn 型ホモエピタキシャルGaN SBD における障壁高さ温度係数の比較とそれに対する熱処理の効果

    村瀬 亮介,前田 拓也,鐘ヶ江 一孝,須田 淳,堀田 昌宏

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  64. 高圧アニールによるMgイオン注入GaNのアクセプタ形成の実証

    櫻井 秀樹,山田 真嗣,高良 昭彦,堀田 昌宏,Bockowski Michal,須田 淳,加地 徹

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  65. Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode Invited

    前田 拓也,岡田 政也,上野 昌紀,山本 喜之,木本 恒暢,堀田 昌宏,須田 淳

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  66. p-GaN/AlGaN/GaN HEMTのガンマ線照射による閾値電圧シフトとその測定パルス幅依存性

    釣本 浩貴,堀田 昌宏,須田 淳

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  67. 電子線照射によりホモエピタキシャル成長n型GaN中に形成されるホールトラップの評価

    遠藤 彗,鐘ヶ江 一孝,堀田 昌宏,須田 淳

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  68. ショットキー接合のC-V測定によるp型GaNの実効アクセプタ密度評価の精度に関する理論的検討

    六野 祥平,堀田 昌宏,須田 淳

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  69. High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow BeveledMesa Structure Combined with Lightly Mg-Doped p-Layers International conference

    T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, M. Horita, T. Kimoto, J. Suda

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

  70. Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgaplight-excited isothermal capacitance transient spectroscopy International conference

    K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

  71. Estimation of Impact Ionization Coefficient in GaN and Its Temperature Dependence by Photomultiplication Measurements Utilizing FranzKeldysh Effect International conference

    T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

  72. Photon energy dependence of photoionization cross section ratio of electron to hole for the carbon-related hole trap in n-type GaN International conference

    K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

  73. Deep Level Traps Introduced in GaN Layers by High-Temperature Thermal Treatment with SiN Cap Layers International conference

    S. Furuta, M. Horita, N. Tanaka, T. Oka, J. Suda

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

  74. Determination Methods of H1 Trap Concentration in N-Type GaN Schottky Barriers via Sub-Bandgap-Light Isothermal Capacitance Transient Spectroscopy International conference

    K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

  75. Growth of P-Type GaN Layers with Low Mg Concentrations by Using MOVPE and the Application to Vertical Power Devices (Invited) Invited International conference

    T. Narita, K. Tomita, Y. Tokuda, T. Kogiso, T. Maeda, M. Horita, M. Kanechika, H. Ueda, T. Kachi, J. Suda

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (invited, special)  

  76. Clear Evidence of P-Type Formation by Hall-Effect Measurements of Mg-Ion Implanted GaN Activated with Ultra-High-Pressure Annealing International conference

    H. Sakurai, M. Omori, S. Yamada, A. Koura, H. Suzuki, T. Narita, K. Kataoka, M. Horita, M. Boćkowski, J. Suda, T. Kachi

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

  77. Impact of Gamma-Ray Irradiation on Device Characteristics of p-GaN/ AlGaN/GaN Normally-Off High-Electron-Mobility Transistors International conference

    K. Tsurimoto, M. Horita, J. Suda

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

  78. Impact of Gamma-Ray Irradiation on Capacitance-Voltage Characteristics of Al2O3/GaN MOS Diodes with Post-Metallization Annealing International conference

    K. Aoshima, M. Horita, S. Kaneki, J. Suda, T. Hashizume

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

  79. Estimation of Impact Ionization Coefficient in GaN by Photomultiplication Measurement Utilizing Franz-Keldysh Effect International conference

    T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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    Event date: 2019.5

    Language:English   Presentation type:Oral presentation (general)  

  80. GaNエピ基板上MOS特性の制御

    上野勝典, 松山秀昭, 田中亮, 高島信也, 江戸雅晴, 堀田昌宏, 須田淳, 中川清和

    電気学会 電子・情報・システム部門(C部門) 電子デバイス研究会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  81. p-GaN/AlGaN/GaN HEMTのガンマ線照射による特性変化の回復過程

    釣本浩貴, 堀田昌宏, 須田淳

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  82. Quartz-free-HVPE成長n型GaN層における補償アクセプタの起源解明

    鐘ヶ江一孝, 藤倉序章, 乙木洋平, 今野泰一郎, 吉田丈洋, 堀田昌宏, 木本恒暢, 須田淳

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  83. SiNキャップ層高温熱処理によりGaN中に導入される深い準位

    古田悟夢, 堀田昌宏, 田中成明, 岡徹, 須田淳

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  84. 横型ショットキーダイオード構造のC-V測定による低ドープn型GaNの実効ドナー密度の評価の精度に関する検討

    六野祥平, 坂尾佳祐, 堀田昌宏, 須田淳

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  85. ホモエピタキシャル成長n型GaNショットキー障壁高さの温度係数の電極金属依存性

    村瀬亮介, 前田拓也, 鐘ヶ江一孝, 堀田昌宏, 須田淳

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  86. ガンマ線照射によるAl2O3/GaN MOSダイオードの容量-電圧特性の変化

    青島慶人, 金木奨太, 堀田昌宏, 須田淳, 橋詰保

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  87. ベベルメサ構造GaN p-n接合ダイオードの電界分布シミュレーション

    前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  88. Franz-Keldysh効果を利用した光電流増倍測定によるGaNにおけるキャリアの衝突イオン化係数の推定

    前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  89. 両側空乏ベベルメサ構造を有するGaN p-n接合ダイオードにおける均一なアバランシェ破壊の実現および平行平板破壊電界の評価

    前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  90. Overview of carrier compensation in n-type and p-type GaN layers grown by metalorganic vapor phase epitaxy Invited International conference

    T. Narita, K. Tomita, Y. Tokuda, T. Kogiso, N. Ikarashi, N. Sawada, M. Horita, J. Suda, T. Kachi

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    Event date: 2019.3

    Language:English   Presentation type:Oral presentation (invited, special)  

  91. Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination International conference

    T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

  92. n型GaN中の正孔トラップ密度の定量評価

    鐘ヶ江一孝, 成田哲生, 冨田一義, 加地徹, 堀田昌宏, 木本恒暢, 須田淳

    先進パワー半導体分科会 第5回講演会 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  93. DLTS studies of quartz-free-HVPE-grown homoepitaxial n-type GaN Invited International conference

    K. Kanegae, H. Fujikura, Y. Otoki, T. Konno, T. Yoshida, M. Horita, T. Kimoto, J. Suda

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (invited, special)  

  94. Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN International conference

    K. Aoshima, K. Kanegae, M. Horita, J. Suda

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

  95. Hole occupancy ratio of H1 trap in homoepitaxial n-type GaN under sub-bandgap light irradiation International conference

    K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, J. Suda

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

  96. Temperature Dependence of Avalanche Multiplicationin GaN PN Diodes Measured by Light Absorption Due to Franz-Keldysh Effect International conference

    T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

  97. Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from the Recombination Current in GaN p-n Junction Diodes International conference

    T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

  98. Temperature dependence of Avalanche Multiplication in GaN PN Diodes Measured by Using Sub-bandgap Light Irradiation

    T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

    第37回電子材料シンポジウム 

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    Event date: 2018.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  99. p-GaN/AlGaN/GaN HEMTのガンマ線照射による閾値電圧およびゲート電流の変化

    釣本浩貴, 堀田昌宏, 須田淳

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  100. Franz-Keldysh効果による光電流を利用したGaN p-n接合ダイオードにおけるアバランシェ増倍の温度依存性の測定

    前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  101. GaN p-n接合ダイオードの再結合電流解析によるホモエピタキシャル成長p-GaNにおけるSRH寿命の評価

    前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  102. n型GaN 中の正孔トラップ密度の定量評価に向けたサブバンドギャップ光照射時の正孔占有率の評価

    鐘ヶ江一孝, 成田哲生, 冨田一義, 加地徹, 堀田昌宏, 木本恒暢, 須田淳

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  103. GaN自立基板上Ni/n-GaN SBDにおける障壁高さ温度特性のドナー密度依存性

    村瀬亮介, 前田拓也, 鐘ヶ江一孝, 堀田昌宏, 須田淳

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  104. ガンマ線照射によりホモエピタキシャル成長n型GaN中に形成される深さ1 eV以上の電子トラップ

    青島慶人, 鐘ヶ江一孝, 堀田昌宏, 須田淳

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  105. 4H-SiC p-n接合ダイオードにおけるFranz-Keldysh効果に起因したフォノンアシスト光吸収

    前田拓也, 遅熙倫, 堀田昌宏, 須田淳, 木本恒暢

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  106. Photocurrent induced by Franz-Keldysh effect in a 4H-SiC p-n junction diode under high reverse bias voltage International conference

    T. Maeda, X. L. Chi, M. Horita, J. Suda, T. Kimoto

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

  107. Measurement of Avalanche Multiplication Factor in GaN p-n Junction Diode Using Sub-Bandgap Light Absorption Due to Franz-Keldysh Effect International conference

    T. Maeda, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

  108. Accurate estimation of H1 trap concentration in n-type GaN layers International conference

    K. Kanegae, M. Horita, T. Kimoto, J. Suda

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    Event date: 2018.8

    Language:English   Presentation type:Oral presentation (general)  

  109. Electrical characterization of homoepitaxial GaN layers for GaN vertical power devices Invited International conference

    J. Suda, M. Horita

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    Event date: 2018.8

    Language:English   Presentation type:Oral presentation (invited, special)  

  110. サブバンドギャップ光照射を用いた GaN p-n接合ダイオードのアバランシェ増倍の測定

    前田拓也, 成田哲生, 上田博之, 兼近将一, 上杉勉, 加地徹, 木本恒暢, 堀田昌宏, 須田淳

    第10回ナノ構造・エピタキシャル成長講演会 

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    Event date: 2018.7

    Language:Japanese   Presentation type:Oral presentation (general)  

  111. Franz-Keldysh effect in GaN Schottky barrier diodes and p-n junction diodes under high reverse bias voltage International conference

    T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, J. Suda

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

  112. Measurement of H1 trap concentration in MOVPE-grown homoepitaxial n-type GaN by optical isothermal capacitance transient spectroscopy using sub-bandgap photoexcitation International conference

    K. Kanegae, M. Horita, T. Kimoto, J. Suda

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

  113. Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode consistently obtained by C-V, I-V, and IPE measurements International conference

    T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita, J. Suda

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

  114. Mgイオン注入GaN層上におけるノーマリーオフMOSFET検討

    高島信也, 田中亮, 上野勝典, 松山秀昭, 江戸雅晴, 高橋言緒, 清水三聡, 石橋章司, 中川清和, 堀田昌宏, 須田淳, 小島一信, 秩父重英, 上殿明良

    第149回結晶工学分科会研究会 GaN on GaNパワーデバイスにむけて ~p型GaNの結晶工学~ 

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    Event date: 2018.6

    Language:Japanese   Presentation type:Oral presentation (general)  

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Research Project for Joint Research, Competitive Funding, etc. 1

  1. 半導体パワーデバイスの実用化に向けた窒化ガリウム中欠陥の物性解明

    2020.5

    研究開発助成 

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\2000000

KAKENHI (Grants-in-Aid for Scientific Research) 4

  1. 高圧水中レーザーアニールによる窒化ガリウム超臨界水低温酸化手法の創出

    2015.4 - 2016.3

    科学研究費補助金 

    堀田 昌宏

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    Authorship:Principal investigator 

  2. 積層構造レーザーアニールによる非晶質基板上単結晶ゲルマニウム薄膜の低温形成

    2011.4 - 2013.3

    科学研究費補助金  若手研究(B)

    堀田 昌宏

  3. 同一ポリタイプ4H-AlN/4H-SiCヘテロ界面の電子デバイス応用に関する研究

    2009.9 - 2011.3

    科学研究費補助金 

    堀田 昌宏

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    Authorship:Principal investigator 

  4. 炭化珪素基板上高品質無極性面III族窒化物の成長と電子・光デバイス応用に関する研究

    2008.4 - 2009.3

    科学研究費補助金 

    堀田 昌宏

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    Authorship:Principal investigator