Updated on 2023/09/28

写真a

 
HARA Shinji
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Division Designated professor
Title
Designated professor

Degree 1

  1. 博士(工学) ( 1992.2   早稲田大学 ) 

Research Interests 16

  1. High Speed DC/DC Converter

  2. Antenna Switch

  3. Low Noise Amplifiers

  4. circuit

  5. Power Amplifiers

  6. GaAs

  7. GaN

  8. millimeter wave

  9. microwave

  10. RF

  11. power amplifiers

  12. active filters

  13. wireless power transfer

  14. low noise amplifiers

  15. millimeter-wave

  16. microwave

Research Areas 1

  1. Others / Others  / 高周波回路

Research History 7

  1. Nagoya University   Institute of Materials and Systems for Sustainability, Center for Integrated Research of Future Electronics

    2018.5

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    Country:Japan

  2. Nagoya University   institute of Materials and Systems for Sustainability   Designated professor

    2018.5

  3. Airoha Technology Corporation

    2016.4 - 2018.4

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    Country:Taiwan, Province of China

  4. Airoha Technology   R&D Center   Technical Director

    2016.4 - 2018.4

  5. Sharp Corporation

    1989.9 - 2015.9

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    Country:Japan

  6. ATR Optical and Radio Communications Research Laboratories

    1986.9 - 1989.8

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    Country:Japan

  7. Sharp Corporation

    1984.4 - 1986.8

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    Country:Japan

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Education 2

  1. Waseda University   Graduate School, Division of Electro Communications

    - 1984.3

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    Country: Japan

  2. Waseda University   Faculty of Science and Engineering

    - 1982.3

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    Country: Japan

Professional Memberships 4

  1. Institute of Electrical and Electronics Engineers

  2. 電子情報通信学会

  3. 応用物理学会

  4. IEEE

Committee Memberships 4

  1.   委員  

    2005 - 2006   

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    Committee type:Academic society

  2.   委員  

    2001 - 2002   

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    Committee type:Academic society

  3. 電子情報通信学会 ソサイエティ論文誌編集委員会   査読委員  

    1995.5   

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    Committee type:Academic society

  4. 電子情報通信   論文査読委員  

    1995.5   

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    Committee type:Academic society

 

Papers 5

  1. Proposal and Demonstration of Power Conversion-Chip/Amplifier Integrated Antenna

    Hara S., Suzuki A., Hirayama H.

    2020 50th European Microwave Conference, EuMC 2020     page: 448 - 451   2021.1

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    Language:Japanese   Publisher:2020 50th European Microwave Conference, EuMC 2020  

    The concept of a power conversion chip integrated antenna (PIA) is proposed for microwave power transmission applications, eliminating the matching circuit between the power conversion chip and antenna to minimise the loss between them. A final stage power amplifier, which is one of the key components of the PIA, was designed and demonstrated. The fabricated 2.4-GHz 33-W GaN HEMT power amplifier demonstrated a drain efficiency of 82.3% and a power added efficiency of 78.8%. A power amplifier integrated antenna, i.e., quasi-PIA, was also demonstrated.

    DOI: 10.23919/EuMC48046.2021.9338201

    Scopus

  2. Matching Circuit-less Power Amplifier Design for Microwave Wireless Power Transmission Systems

    Hara S., Suzuki A.

    2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020     page: 184 - 186   2020.9

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    Language:Japanese   Publisher:2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020  

    A new power amplifier (PA) design method is proposed that eliminates the output-matching circuit to improve efficiency and is applied to a 2.4 GHz 33 W GaN HEMT PA for microwave wireless power transmission applications. The fabricated PA has a drain efficiency of 82.3% and a power-Added efficiency of 78.8%. The design parameters and the performance of the fabricated inverse class-F PA are also discussed analytically.

    DOI: 10.1109/RFIT49453.2020.9226228

    Scopus

  3. Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN substrates

    Moriwaki A., Hara S.

    IEICE Electronics Express   Vol. 19 ( 1 )   2022.1

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    Language:Japanese   Publisher:IEICE Electronics Express  

    In this paper, we compare the distortion and power characteristics between AlGaN/GaN high-electron-mobility transistors (HEMTs) with different epi-structures. Third-order intermodulation distortion (IM3) measurement evaluates distortion characteristics, and on-wafer load and source-pull measurements evaluate the power performance. The results show that the AlGaN/GaN HEMTs directly fabricated on GaN substrates without nucleation layer perform better than those fabricated on SiC substrates. Furthermore, the distortion performance is compared with and without field plate.

    DOI: 10.1587/ELEX.18.20210486

    Scopus

  4. 2.4GHz high efficiency GaN power amplifier using matching circuit less design

    Suzuki A., Hara S.

    2020 4th Australian Microwave Symposium, AMS 2020     2020.2

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    Language:Japanese   Publisher:2020 4th Australian Microwave Symposium, AMS 2020  

    Efficiency is critical element for microwave power amplifier, especially for energy applications. In this paper, the new design approach to enhance the efficiency which eliminates the output matching circuit is proposed. A 2.4GHz GaN power amplifier is demonstrated using the proposed design method. By eliminating the matching circuit and applying inverse class-F operation, the drain efficiency of 82.3% and power added efficiency of 78.8% are obtained for 30W power amplifier.

    DOI: 10.1109/AMS48904.2020.9059420

    Scopus

  5. Thermal S-parameters introduction for dynamic thermal simulation of power amplifiers

    Ishimaru Y., Chiu H., Hara S.

    Asia-Pacific Microwave Conference Proceedings, APMC   Vol. 2019-December   page: 1643 - 1645   2019.12

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    Language:Japanese   Publisher:Asia-Pacific Microwave Conference Proceedings, APMC  

    Thermal S-parameters and its calculation method are proposed to design power amplifiers considering dynamic thermal response, and the method is applied to. 11ac WiFi PA design. The proposed method is much faster than commercially available method and useful for the practical power amplifier design.

    DOI: 10.1109/APMC46564.2019.9038799

    Scopus

Presentations 14

  1. ft超でのミリ波帯GaNカスコードパワーアンプの設計手法の検討

    末松英治

    電子情報通信学会総合大会  2023.3.7 

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    Event date: 2023.3

  2. 表皮効果を考慮したゲート電極を用いたFETモデリングの検討

    作野圭一

    電子情報通信学会総合大会  2023.3.7 

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    Event date: 2023.3

  3. 分布定数モデルに基く大Wg GaN HEMTの利得低下要因の一考察

    作野圭一

    電子情報通信学会総合大会  2023.3.7 

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    Event date: 2023.3

  4. Advantages of gallium nitride (GaN) devices and its application to microwave and millimeter wave circuits Invited International conference

    Shinji Hara

    ISIPS2022  2022.11.10 

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    Event date: 2022.11

    Language:English   Presentation type:Symposium, workshop panel (nominated)  

    Country:Japan  

  5. ミリ波カスコード型GaN パワーアンプにおける設計課題

    末松英治

    電子情報通信学会ソサイエティ大会  2022.9.6 

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    Event date: 2022.9

  6. ミリ波GaN パワーアンプにおけるfmax/2 超での設計課題

    末松英治

    電子情報通信学会総合大会  2022.3.16 

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    Event date: 2022.3

  7. マイクロ波無線電力伝送用整合回路レス/アンテナ直結型パワーアンプ

    原信二

    MWE2020  2020.11.26  電子情報通信学会

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    Event date: 2020.11

    Language:Japanese   Presentation type:Symposium, workshop panel (nominated)  

    Venue:オンライン   Country:Japan  

  8. 整合回路レスパワーアンプ設計の検討

    原信二

    電子情報通信学会2020年ソサイエティ大会  2020.9.15  電子情報通信学会

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:WEB  

  9. マイクロ波放射型無線電力伝送の高効率化要素回路技術 Invited

    原信二

    電子情報通信学会2020年ソサイエティ大会  2020.9.16  電子情報通信学会

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:WEB  

  10. CompoundSemiconductor (GaAs, GaN) Prospects for RF Applications Invited International conference

    Shinji Hara

    2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices  2018.7  IEICE

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kitakyushu   Country:Japan  

  11. マイクロ波無線電力伝送用送電PIAの提案および整合回路レス高効率パワーアンプ Invited

    原 信二

    第3回 WiPOTシンポジウム  2020.1.22 

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    Language:Japanese  

    Venue:名古屋   Country:Japan  

  12. SiCおよびGaN基板上のAlGaN/GaN HEMTの歪特性比較

    森脇淳

    電子情報通信学会2020年ソサイエティ大会  2020.9.15  電子情報通信学会

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:WEB  

  13. パワーアンプとアンテナの一体化設計

    鈴木麻子

    電子情報通信学会無線電力伝送研究専門委員会、マイクロ波研究専門委員会研究会  2020.4.23  電子情報通信学会無線電力伝送研究専門委員会、マイクロ波研究専門委員会

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:WEB  

  14. マイクロ波WPTシステムのための高効率増幅器

    鈴木麻子

    2020年電子情報通信学会総合大会  2020.3.19 

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    Presentation type:Oral presentation (general)  

    Venue:広島   Country:Japan  

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