Updated on 2024/04/01

写真a

 
KUTSUKAKE Kentaro
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Associate professor
Graduate School
Graduate School of Engineering
Title
Associate professor
Contact information
メールアドレス

Degree 1

  1. 博士(理学) ( 2007.3   東北大学 ) 

Research Areas 1

  1. Nanotechnology/Materials / Crystal engineering

Research History 6

  1. Nagoya University   Institutes of Innovation for Future Society   Designated lecturer

    2017.11

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    Country:Japan

  2. Tohoku University   Institute for Materials Research   Associate Professor

    2010.10 - 2017.10

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    Country:Japan

  3. Kyoto University   Graduate Scool of Energy Science   Associate Professor

    2010.4 - 2010.9

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    Country:Japan

  4. Tohoku University   Institute for Materials Research   Associate Professor

    2007.8 - 2010.3

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    Country:Japan

  5. Tohoku University

    2007.4 - 2007.7

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    Country:Japan

  6. Tohoku University

    2006.4 - 2007.3

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    Country:Japan

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Education 3

  1. Tohoku University   Graduate School, Division of Natural Science

    2004.4 - 2007.3

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    Country: Japan

  2. Tohoku University   Graduate School, Division of Natural Science

    2002.4 - 2004.3

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    Country: Japan

  3. Tohoku University   Faculty of Science

    1998.4 - 2002.3

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    Country: Japan

Professional Memberships 2

  1. 日本結晶成長学会

  2. 応用物理学会

Committee Memberships 4

  1. 日本学術振興会第145委員会   学界委員  

    2017.4   

  2. 応用物理学会   学術講演会プログラム編集委員  

    2013.8 - 2018.3   

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    Committee type:Other

  3. 応用物理学会   機関誌「応用物理」 編集委員  

    2013.4 - 2015.3   

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    Committee type:Other

  4. 応用物理学会 結晶工学分科会   幹事  

    2012   

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    Committee type:Academic society

 

Papers 50

  1. Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon Reviewed

    Ohno Yutaka, Inoue Kaihei, Fujiwara Kozo, Kutsukake Kentaro, Deura Momoko, Yonenaga Ichiro, Ebisawa Naoki, Shimizu Yasuo, Inoue Koji, Nagai Yasuyoshi, Yoshida Hideto, Takeda Seiji, Tanaka Shingo, Kohyama Masanori

    APPLIED PHYSICS LETTERS   Vol. 110 ( 6 )   2017.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4975814

    Web of Science

  2. Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities Reviewed

    Joonwichien Supawan, Takahashi Isao, Kutsukake Kentaro, Usami Noritaka

    PROGRESS IN PHOTOVOLTAICS   Vol. 24 ( 12 ) page: 1615-1625   2016.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pip.2795

    Web of Science

  3. Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals Reviewed

    Ohno Yutaka, Kutsukake Kentaro, Deura Momoko, Yonenaga Ichiro, Shimizu Yasuo, Ebisawa Naoki, Inoue Koji, Nagai Yasuyoshi, Yoshida Hideto, Takeda Seiji

    APPLIED PHYSICS LETTERS   Vol. 109 ( 14 )   2016.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4964440

    Web of Science

  4. Characterization of silicon ingots: Mono-like versus high-performance multicrystalline Reviewed

    Kutsukake Kentaro, Deura Momoko, Ohno Yutaka, Yonenaga Ichiro

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 54 ( 8 )   2015.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.54.08KD10

    Web of Science

  5. Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides Reviewed

    Yonenaga Ichiro, Ohkubo Yasushi, Deura Momoko, Kutsukake Kentaro, Tokumoto Yuki, Ohno Yutaka, Yoshikawa Akihiko, Wang Xin Qiang

    AIP ADVANCES   Vol. 5 ( 7 )   2015.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4926966

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  6. Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals Reviewed

    Ohno Yutaka, Inoue Kaihei, Fujiwara Kozo, Deura Momoko, Kutsukake Kentaro, Yonenaga Ichiro, Shimizu Yasuo, Inoue Koji, Ebisawa Naoki, Nagai Yasuyoshi

    APPLIED PHYSICS LETTERS   Vol. 106 ( 25 )   2015.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4921742

    Web of Science

  7. Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si Reviewed

    Ohno Yutaka, Inoue Kaihei, Kutsukake Kentaro, Deura Momoko, Ohsawa Takayuki, Yonenaga Ichiro, Yoshida Hideto, Takeda Seiji, Taniguchi Ryo, Otubo Hideki, Nishitani Sigeto R., Ebisawa Naoki, Shimizu Yasuo, Takamizawa Hisashi, Inoue Koji, Nagai Yasuyoshi

    PHYSICAL REVIEW B   Vol. 91 ( 23 )   2015.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.91.235315

    Web of Science

  8. Czochralski growth of heavily tin-doped Si crystals Reviewed

    Yonenaga I., Taishi T., Inoue K., Gotoh R., Kutsukake K., Tokumoto Y., Ohno Y.

    JOURNAL OF CRYSTAL GROWTH   Vol. 395   page: 94-97   2014.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2014.02.052

    Web of Science

  9. Slip systems in wurtzite ZnO activated by Vickers indentation on {2(1)over-bar (1)over-bar0} and {10(1)over-bar0} surfaces at elevated temperatures Reviewed

    Ohno Y., Koizumi H., Tokumoto Y., Kutsukake K., Taneichi H., Yonenaga I.

    JOURNAL OF CRYSTAL GROWTH   Vol. 393   page: 119-122   2014.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1010/j.jo-vsgro.2013.11.033

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  10. Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements Reviewed

    Inoue K., Taishi T., Tokumoto Y., Kutsukake K., Ohno Y., Ohsawa T., Gotoh R., Yonenaga I.

    JOURNAL OF CRYSTAL GROWTH   Vol. 393   page: 45-48   2014.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2013.10.033

    Web of Science

  11. Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains Reviewed

    Kutsukake Kentaro, Usami Noritaka, Ohno Yutaka, Tokumoto Yuki, Yonenaga Ichiro

    IEEE JOURNAL OF PHOTOVOLTAICS   Vol. 4 ( 1 ) page: 84-87   2014.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/JPHOTOV.2013.2281730

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  12. Three-dimensional evaluation of gettering ability of Sigma 3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy Reviewed

    Ohno Yutaka, Inoue Kaihei, Tokumoto Yuki, Kutsukake Kentaro, Yonenaga Ichiro, Ebisawa Naoki, Takamizawa Hisashi, Shimizu Yasuo, Inoue Koji, Nagai Yasuyoshi, Yoshida Hideto, Takeda Seiji

    APPLIED PHYSICS LETTERS   Vol. 103 ( 10 )   2013.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4820140

    Web of Science

  13. Growth of Si single bulk crystals with low oxygen concentrations by the noncontact crucible method using silica crucibles without Si3N4 coating Reviewed

    Nakajima Kazuo, Murai Ryota, Morishita Kohei, Kutsukake Kentaro

    JOURNAL OF CRYSTAL GROWTH   Vol. 372   page: 121-128   2013.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2013.03.024

    Web of Science

  14. Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies Reviewed

    Inoue K., Taishi T., Tokumoto Y., Murao Y., Kutsukake K., Ohno Y., Suezawa M., Yonenaga I.

    JOURNAL OF APPLIED PHYSICS   Vol. 113 ( 7 )   2013.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4792061

    Web of Science

  15. Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries Reviewed

    Kutsukake Kentaro, Usami Noritaka, Ohno Yutaka, Tokumoto Yuki, Yonenaga Ichiro

    APPLIED PHYSICS EXPRESS   Vol. 6 ( 2 )   2013.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.6.025505

    Web of Science

  16. Nanoindentation Hardness and Elastic Modulus of AlGaN Alloys Reviewed

    Tokumoto Y., Taneichi H., Ohno Y., Kutsukake K., Miyake H., Hiramatsu K., Yonenaga I.

    2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)     page: .   2013

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  17. Growth of Si Single Bulk Crystals Inside Si Melts By the Noncontact Crucible Method Using Silica Crucibles Without Coating Si3N4 Particles Reviewed

    Nakajima Kazuo, Murai Ryota, Morishita Kohei, Kutsukake Kentaro

    2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 174-176   2013

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    Web of Science

  18. Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation (vol 112, 093526, 2012) Reviewed

    Tokumoto Yuki, Kutsukake Kentaro, Ohno Yutaka, Yonenaga Ichiro

    JOURNAL OF APPLIED PHYSICS   Vol. 112 ( 12 )   2012.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4771927

    Web of Science

  19. Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation Reviewed

    Tokumoto Yuki, Kutsukake Kentaro, Ohno Yutaka, Yonenaga Ichiro

    JOURNAL OF APPLIED PHYSICS   Vol. 112 ( 9 )   2012.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4764928

    Web of Science

  20. Growth of high-quality multicrystalline Si ingots using noncontact crucible method Reviewed

    Nakajima Kazuo, Morishita Kohei, Murai Ryota, Kutsukake Kentaro

    JOURNAL OF CRYSTAL GROWTH   Vol. 355 ( 1 ) page: 38-45   2012.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2012.06.034

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  21. Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth Reviewed

    Kutsukake Kentaro, Ise Hideaki, Tokumoto Yuki, Ohno Yutaka, Nakajima Kazuo, Yonenaga Ichiro

    JOURNAL OF CRYSTAL GROWTH   Vol. 352 ( 1 ) page: 173-176   2012.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2012.02.004

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  22. Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress Reviewed

    Nakajima Kazuo, Murai Ryota, Morishita Kohei, Kutsukake Kentaro, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 344 ( 1 ) page: 6-11   2012.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2012.01.051

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  23. Growth of Heavily Indium doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium Reviewed

    Inoue Kaihei, Tokumoto Yuki, Kutsukake Kentaro, Ohno Yutaka, Yonenaga Ichiro

    MATERIALS INTEGRATION   Vol. 508   page: 220-223   2012

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.4028/www.scientific.net/KEM.508.220

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  24. Growth of Multicrystalline Si Ingots for Solar Cells Using Noncontact Crucible Method without Touching the Crucible Wall Reviewed

    Nakajima Kazuo, Murai Ryota, Morishita Kohei, Kutsukake Kentaro, Usami Noritaka

    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 1830-1832   2012

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  25. Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth Reviewed

    Kutsukake Kentaro, Abe Takuro, Usami Noritaka, Fujiwara Kozo, Yonenaga Ichiro, Morishita Kohei, Nakajima Kazuo

    JOURNAL OF APPLIED PHYSICS   Vol. 110 ( 8 )   2011.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3652891

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  26. Formation mechanism of twin boundaries during crystal growth of silicon Reviewed

    Kutsukake Kentaro, Abe Takuro, Usami Noritaka, Fujiwara Kozo, Morishita Kohei, Nakajima Kazuo

    SCRIPTA MATERIALIA   Vol. 65 ( 6 ) page: 556-559   2011.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.scriptamat.2011.06.028

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  27. Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells Reviewed

    Usami Noritaka, Takahashi Isao, Kutsukake Kentaro, Fujiwara Kozo, Nakajima Kazuo

    JOURNAL OF APPLIED PHYSICS   Vol. 109 ( 8 )   2011.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3576108

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  28. Arrangement of dendrite crystals grown along the bottom of Si ingots using the dendritic casting method by controlling thermal conductivity under crucibles Reviewed

    Nakajima Kazuo, Kutsukake Kentaro, Fujiwara Kozo, Morishita Kohei, Ono Satoshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 319 ( 1 ) page: 13-18   2011.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2011.01.069

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  29. Pattern formation mechanism of a periodically faceted interface during crystallization of Si Reviewed

    Tokairin M., Fujiwara K., Kutsukake K., Kodama H., Usami N., Nakajima K.

    JOURNAL OF CRYSTAL GROWTH   Vol. 312 ( 24 ) page: 3670-3674   2010.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2010.09.059

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  30. Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed Reviewed

    Takahashi Isao, Usami Noritaka, Kutsukake Kentaro, Stokkan Gaute, Morishita Kohei, Nakajima Kazuo

    JOURNAL OF CRYSTAL GROWTH   Vol. 312 ( 7 ) page: 897-901   2010.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2010.01.011

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  31. Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth Reviewed

    Usami Noritaka, Yokoyama Ryusuke, Takahashi Isao, Kutsukake Kentaro, Fujiwara Kozo, Nakajima Kazuo

    JOURNAL OF APPLIED PHYSICS   Vol. 107 ( 1 )   2010.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3276219

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  32. HIGH EFFICIENCY SOLAR CELLS OBTAINED FROM SMALL SIZE INGOTS WITH 30 CM Phi BY CONTROLLING THE DISTRIBUTION AND ORIENTATION OF DENDRITE CRYSTALS GROWN ALONG THE BOTTOM OF THE INGOTS Reviewed

    Nakajima K., Kutsukake K., Fujiwara K., Usami N., Ono S., Yamasaki

    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE     page: 817-819   2010

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  33. Computational Investigation of Relationship between Shear Stress and Multicrystalline Structure in Silicon Reviewed

    Takahashi Isao, Usami Noritaka, Kutsukake Kentaro, Morishita Kohei, Nakajima Kazuo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 49 ( 4 )   2010

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.49.04DP01

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  34. FORMATION MECHANISM OF TWIN BOUNDARIES IN SILICON MULTICRYSTALS DURING CRYSTAL GROWTH Reviewed

    Kutsukake K., Abe T., Usami N., Fujiwara K., Morishita K., Nakajima K.

    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE     page: .   2010

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    Web of Science

  35. Growth behavior of faceted Si crystals at grain boundary formation Reviewed

    Fujiwara K., Tsumura S., Tokairin M., Kutsukake K., Usami N., Uda S., Nakajima K.

    JOURNAL OF CRYSTAL GROWTH   Vol. 312 ( 1 ) page: 19-23   2009.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2009.09.055

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  36. Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth Reviewed

    Tokairin M., Fujiwara K., Kutsukake K., Usami N., Nakajima K.

    PHYSICAL REVIEW B   Vol. 80 ( 17 )   2009.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.80.174108

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  37. Microstructures of Si multicrystals and their impact on minority carrier diffusion length Reviewed

    Wang H. Y., Usami N., Fujiwara K., Kutsukake K., Nakajima K.

    ACTA MATERIALIA   Vol. 57 ( 11 ) page: 3268-3276   2009.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.actamat.2009.03.033

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  38. Quantitative analysis of subgrain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance Reviewed

    Kutsukake Kentaro, Usami Noritaka, Ohtaniuchi Tsuyoshi, Fujiwara Kozo, Nakajima Kazuo

    JOURNAL OF APPLIED PHYSICS   Vol. 105 ( 4 )   2009.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3079504

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  39. Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals Reviewed

    Usami Noritaka, Kutsukake Kentaro, Fujiwara Kozo, Yonenaga Ichiro, Nakajima Kazuo

    APPLIED PHYSICS EXPRESS   Vol. 1 ( 7 )   2008.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/APEX.1.075001

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  40. Modification of local structures in multicrystals revealed by spatially resolved x-ray rocking curve analysis Reviewed

    Usami Noritaka, Kutsukake Kentaro, Fujiwara Kozo, Nakajima Kazuo

    JOURNAL OF APPLIED PHYSICS   Vol. 102 ( 10 )   2007.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2816207

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  41. Influence of structural imperfection of Sigma 5 grain boundaries in bulk multicrystalline Si on their electrical activities Reviewed

    Kutsukake Kentaro, Usami Noritaka, Fujiwara Kozo, Nose Yoshitaro, Nakajima Kazuo

    JOURNAL OF APPLIED PHYSICS   Vol. 101 ( 6 )   2007.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2710348

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  42. Modification of local structure and its influence on electrical activity of near (310) Sigma 5 grain boundary in bulk silicon Reviewed

    Kutsukake Kentaro, Usami Noritaka, Fujiwara Kozo, Nose Yoshitaro, Sugawara Takamasa, Shishido Toetsu, Nakajima Kazuo

    MATERIALS TRANSACTIONS   Vol. 48 ( 2 ) page: 143-147   2007.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.2320/matertrans.48.143

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  43. Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer Reviewed

    Usami Noritaka, Kutsukake Kentaro, Nakajima Kazuo, Amtablian Sevak, Fave Alain, Lemiti Mustapha

    APPLIED PHYSICS LETTERS   Vol. 90 ( 3 )   2007.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2433025

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  44. Realization of bulk multicrystalline silicon with controlled grain boundaries by utilizing spontaneous modification of grain boundary configuration Reviewed

    Usami N, Kutsukake K, Sugawara T, Fujwara K, Pan W, Nose Y, Shishido T, Nakajima K

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 45 ( 3A ) page: 1734-1737   2006.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.45.1734

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  45. Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique Reviewed

    Kitamura M, Usami N, Sugawara T, Kutsukake K, Fujiwara K, Nose Y, Shishido T, Nakajima K

    JOURNAL OF CRYSTAL GROWTH   Vol. 280 ( 3-4 ) page: 419-424   2005.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2005.04.049

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  46. Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer Reviewed

    Usami Noritaka, Kutsukake Kentaro, Pan Wugen, Fujiwara Kozo, Ujihara Toru, Zhang Baoping, Yokoyama Takashi, Nakajima Kazuo

    JOURNAL OF CRYSTAL GROWTH   Vol. 275 ( 1-2 ) page: E1203-E1207   2005.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2004.11.141

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  47. Floating zone growth of Si bicrystals using seed crystals with artificially designed grain boundary configuration Reviewed

    Usami N, Kitamura M, Sugawara T, Kutsukake K, Ohdaira K, Nose Y, Fujiwara K, Shishido T, Nakajima K

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   Vol. 44 ( 24-27 ) page: L778-L780   2005

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.44.L778

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  48. On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates Reviewed

    Kutsukake K, Usami N, Ujihara T, Fujiwara K, Sazaki G, Nakajima K

    APPLIED PHYSICS LETTERS   Vol. 85 ( 8 ) page: 1335-1337   2004.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.1784036

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  49. Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate Reviewed

    Kutsukake K, Usami N, Fujiwara K, Ujihara T, Sazaki G, Nakajima K, Zhang BP, Segawa Y

    APPLIED SURFACE SCIENCE   Vol. 224 ( 1-4 ) page: 95-98   2004.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.apsusc.2003.08.100

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  50. Fabrication of SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate Reviewed

    Kutsukake K, Usami N, Fujiwara K, Ujihara T, Sazaki G, Zhang BP, Segawa Y, Nakajima K

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   Vol. 42 ( 3A ) page: L232-L234   2003.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.42.L232

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Presentations 3

  1. 物理計測の適応的マッピング Invited

    沓掛健太朗

    インフォマティクスと連携したモノづくりと計測技術 

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    Event date: 2018.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学東山キャンパスES総合館ESホール   Country:Japan  

  2. データ科学を駆使した適応的マッピング測定 Invited

    沓掛健太朗

    日本学術振興会「結晶加工と評価技術」第145委員会 第156回研究会 

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    Event date: 2017.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:明治大学 駿河台キャンパス グローバルフロント   Country:Japan  

  3. データ科学的手法による効率的なマッピング(3):測定点移動距離の検討

    沓掛健太朗, 菊地亮太, 大野裕, 下山幸治

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan