Updated on 2021/03/24

写真a

 
PRISTOVSEK Markus
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Designated professor
Title
Designated professor
Contact information
メールアドレス

Degree 2

  1. Habilitation ( 2011.11   Technische Universität Berlin ) 

  2. Doctor of Natural Science ( 2000.11   Technische Universität Berlin ) 

Research History 6

  1. University of Cambridge   Institute for Material Science and Metallurgy   Senior Research Associate

    2012.10 - 2016.12

      More details

    Country:United Kingdom

  2. Technische Universität Berlin   Institut für Festkörperphysik   Assistent (non tenured lecturer)

    2003.11 - 2012.9

      More details

    Country:Germany

  3. Ferdinand Braun Institut für Höchstfrequenztechnik, Berlin   Post-doctorial Researcher

    2003.3 - 2003.11

      More details

    Country:Germany

  4. National Institute for Materials Science, NIMS   JSPS Fellowship

    2001.10 - 2003.1

      More details

    Country:Japan

  5. National Institute for Materials Science, NIMS   COE Fellow

    2000.11 - 2001.10

      More details

    Country:Japan

  6. Technische Universität Berlin   Institut für Festkörperphysik   Research Assistant (PhD Student)

    1996.4 - 2000.10

      More details

    Country:Germany

▼display all

 

Papers 127

  1. Increasing the Luminescence Efficiency of Long-Wavelength (In,Ga)N Quantum Well Structures by Electric Field Engineering Using an (Al,Ga)N Capping Layer

    Vichi Stefano, Robin Yoann, Sanguinetti Stefano, Pristovsek Markus, Amano Hiroshi

    PHYSICAL REVIEW APPLIED   Vol. 14 ( 2 )   2020.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevApplied.14.024018

    Web of Science

  2. Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF MATERIALS CHEMISTRY C   Vol. 8 ( 25 ) page: 8668-8675   2020.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/d0tc01369b

    Web of Science

  3. Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 35 ( 3 )   2020.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/ab63f1

    Web of Science

  4. Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

    Ye Zheng, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 2 )   2020.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ab6fb0

    Web of Science

  5. Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    2D MATERIALS   Vol. 7 ( 1 )   2020.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/2053-1583/ab46e6

    Web of Science

  6. Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

    Dinh Duc V., Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 34 ( 12 )   2019.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/ab4d2c

    Web of Science

  7. Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

    Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SCIENTIFIC REPORTS   Vol. 9   2019.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-019-52067-y

    Web of Science

  8. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

    Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 516   page: 63-66   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.03.025

    Web of Science

  9. Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

    Nan Hu, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab1252

    Web of Science

  10. Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming

    Robin Yoann, Hemeret Francois, D'Inca Gillian, Pristovsek Markus, Trassoudaine Agnes, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab06ae

    Web of Science

  11. Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 514   page: 13-13   2019.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.02.058

    Web of Science

  12. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

    Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 512   page: 78-83   2019.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.02.013

    Web of Science

  13. Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE

    Duc V Dinh, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 512   page: 100-104   2019.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.02.020

    Web of Science

  14. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

    Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 509   page: 50-53   2019.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.12.007

    Web of Science

  15. Morphological study of InGaN on GaN substrate by supersaturation

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 508   page: 58-65   2019.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.12.028

    Web of Science

  16. How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

    Hu Nan, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 507   page: 205-208   2019.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.11.013

    Web of Science

  17. MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire

    Dinh Duc V., Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 502   page: 14-18   2018.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.09.001

    Web of Science

  18. What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

    Robin Y., Pristovsek M., Amano H., Oehler F., Oliver R. A., Humphreys C. J.

    JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 18 )   2018.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5047240

    Web of Science

  19. Simultaneous Growth of Various InGaN/GaN Core-Shell Microstructures for Color Tunable Device Applications

    Robin Yoann, Liao Yaqiang, Pristovsek Markus, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 215 ( 21 )   2018.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201800361

    Web of Science

  20. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

    Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 10 )   2018.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.105501

    Web of Science

  21. High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 498   page: 377-380   2018.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.07.015

    Web of Science

  22. Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

    Barry Ousmane I., Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 12 ( 8 )   2018.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssr.201800124

    Web of Science

  23. Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

    Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

    SCIENTIFIC REPORTS   Vol. 8   2018.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-018-25473-x

    Web of Science

  24. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 5 )   2018.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.11.051002

    Web of Science

  25. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy Reviewed

    Yang Xu, Nitta Shugo, Nagamatsu Kentaro, Bae Si-Young, Lee Ho-Jun, Liu Yuhuai, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 482   page: 1-8   2018.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2017.10.036

    Web of Science

  26. Structural and optical properties of Gd implanted GaN with various crystallographic orientations Reviewed

    Mackova A., Malinsky P., Jagerova A., Sofer Z., Klimova K., Sedmidubsky D., Pristovsek M., Mikulics M., Lorincik J., Boettger R., Akhmadaliev S.

    THIN SOLID FILMS   Vol. 638   page: 63-72   2017.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2017.07.036

    Web of Science

  27. Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy Reviewed

    Pristovsek Markus, Bellman Konrad, Mehnke Frank, Stellmach Joachim, Wernicke Tim, Kneissl Michael

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 254 ( 8 )   2017.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201600711

    Web of Science

  28. Effects of Wavelength and Defect Density on the Efficiency of (In, Ga) N-Based Light-Emitting Diodes Reviewed

    Pristovsek Markus, Bao An, Oliver Rachel A., Badcock Tom, Ali Muhammad, Shields Andrew

    PHYSICAL REVIEW APPLIED   Vol. 7 ( 6 )   2017.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevApplied.7.064007

    Web of Science

  29. Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures Reviewed

    Badcock T. J., Ali M., Zhu T., Pristovsek M., Oliver R. A., Shields A. J.

    APPLIED PHYSICS LETTERS   Vol. 109 ( 15 )   2016.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4964842

    Web of Science

  30. Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence Reviewed

    Hocker Matthias, Maier Pascal, Jerg Lisa, Tischer Ingo, Neusser Gregor, Kranz Christine, Pristovsek Markus, Humphreys Colin J., Leute Robert A. R., Heinz Dominik, Rettig Oliver, Scholz Ferdinand, Thonke Klaus

    JOURNAL OF APPLIED PHYSICS   Vol. 120 ( 8 )   2016.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4961417

    Web of Science

  31. Deoxidation of (001) III-V semiconductors in metal-organic vapour phase epitaxy Reviewed

    Kaspari Christian, Pristovsek Markus, Richter Wolfgang

    JOURNAL OF APPLIED PHYSICS   Vol. 120 ( 8 )   2016.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4961414

    Web of Science

  32. Structural and optical properties of (11(2)over-bar2) InGaN quantum wells compared to (0001) and (11(2)over-bar0) Reviewed

    Pristovsek Markus, Han Yisong, Zhu Tongtong, Oehler Fabrice, Tang Fengzai, Oliver Rachel A., Humphreys Colin J., Tytko Darius, Choi Pyuck-Pa, Raabe Dierk, Brunner Frank, Weyers Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 31 ( 8 )   2016.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/0268-1242/31/8/085007

    Web of Science

  33. The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy Reviewed

    Pristovsek Markus, Poser Florian, Richter Wolfgang

    MATERIALS RESEARCH EXPRESS   Vol. 3 ( 7 )   2016.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/2053-1591/3/7/075902

    Web of Science

  34. Toward defect-free semi-polar GaN templates on pre-structured sapphire Reviewed

    Han Yisong, Caliebe Marian, Hage Fredrik, Ramasse Quentin, Pristovsek Markus, Zhu Tongtong, Scholz Ferdinand, Humphreys Colin

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 253 ( 5 ) page: 834-839   2016.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201552636

    Web of Science

  35. Comparative study of (0001) and (11(2)over-bar2) InGaN based light emitting diodes Reviewed

    Pristovsek Markus, Humphreys Colin J., Bauer Sebastian, Knab Manuel, Thonke Klaus, Kozlowski Grzegorz, O'Mahony Donagh, Maaskant Pleun, Corbett Brian

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.55.05FJ10

    Web of Science

  36. MOVPE growth and indium incorporation of polar, semipolar (11(2)over-bar2) and (20(2)over-bar21) InGaN Reviewed

    Dinh Duc V., Pristovsek Markus, Kneissl Michael

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 253 ( 1 ) page: 93-98   2016.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201552274

    Web of Science

  37. Optimizing GaN (11(2)over-bar2) hetero-epitaxial templates grown on (10(1)over-bar0) sapphire Reviewed

    Pristovsek Markus, Frentrup Martin, Han Yisong, Humphreys Colin J.

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 253 ( 1 ) page: 61-66   2016.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201552263

    Web of Science

  38. Development of semipolar (11-22) LEDs on GaN templates Reviewed

    Corbett B., Quan Z., Dinh D. V., Kozlowski G., O'Mahony D., Akhter M., Schulz S., Parbrook P., Maaskant P., Caliebe M., Hocker M., Thonke K., Scholz F., Pristovsek M., Han Y., Humphreys C. J., Brunner F., Weyers M., Meyer T. M., Lymperakis L.

    LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX   Vol. 9768   2016

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1117/12.2204758

    Web of Science

  39. Breakdown of the Green Gap in (0001) InGaN LEDs Reviewed

    Pristovsek Markus, Oliver Rachel A., Badcock Tom, Ali Muhammad, Shields Andrew

    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)     page: .   2016

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  40. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes Reviewed

    Mehnke Frank, Kuhn Christian, Stellmach Joachim, Kolbe Tim, Lobo-Ploch Neysha, Rass Jens, Rothe Mark-Antonius, Reich Christoph, Ledentsov Nikolay Jr., Pristovsek Markus, Wernicke Tim, Kneissl Michael

    JOURNAL OF APPLIED PHYSICS   Vol. 117 ( 19 )   2015.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4921439

    Web of Science

  41. Low defect large area semi-polar (11(2)over-bar2) GaN grown on patterned (113) silicon Reviewed

    Pristovsek Markus, Han Yisong, Zhu Tongtong, Frentrup Martin, Kappers Menno J., Humphreys Colin J., Kozlowski Grzegorz, Maaskant Pleun, Corbett Brian

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 252 ( 5 ) page: 1104-1108   2015.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201451591

    Web of Science

  42. Origin of faceted surface hillocks on semi-polar (11(2)over-bar2) GaN templates grown on pre-structured sapphire Reviewed

    Han Yisong, Caliebe Marian, Kappers Menno, Scholz Ferdinand, Pristovsek Markus, Humphreys Colin

    JOURNAL OF CRYSTAL GROWTH   Vol. 415   page: 170-175   2015.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2014.12.040

    Web of Science

  43. Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers Reviewed

    Skuridina D., Dinh D. V., Pristovsek M., Lacroix B., Chauvat M. -P., Ruterana P., Kneissl M., Vogt P.

    APPLIED SURFACE SCIENCE   Vol. 307   page: 461-467   2014.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.apsusc.2014.04.057

    Web of Science

  44. Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy Reviewed

    Skuridina D., Dinh D. V., Lacroix B., Ruterana P., Hoffmann M., Sitar Z., Pristovsek M., Kneissl M., Vogt P.

    JOURNAL OF APPLIED PHYSICS   Vol. 114 ( 17 )   2013.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4828487

    Web of Science

  45. Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy Reviewed

    Dinh Duc V., Skuridina D., Solopow S., Pristovsek M., Vogt P., Kneissl M.

    JOURNAL OF CRYSTAL GROWTH   Vol. 376   page: 17-22   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2013.04.034

    Web of Science

  46. Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy Reviewed

    Dinh Duc V., Solopow Sergej, Pristovsek Markus, Kneissl Michael

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.52.08JD03

    Web of Science

  47. Surface Transitions During InGaN Growth on GaN(0001) in Metal-Organic Vapor Phase Epitaxy Reviewed

    Pristovsek Markus, Kadir Abdul, Kneissl Michael

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.52.08JB23

    Web of Science

  48. Wavelength limits for InGaN quantum wells on GaN Reviewed

    Pristovsek Markus

    APPLIED PHYSICS LETTERS   Vol. 102 ( 24 )   2013.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4811560

    Web of Science

  49. Growth mode transition and relaxation of thin InGaN layers on GaN (0001) Reviewed

    Pristovsek Markus, Kadir Abdul, Meissner Christian, Schwaner Tilman, Leyer Martin, Stellmach Joachim, Kneissl Michael, Ivaldi Francesco, Kret Slawomir

    JOURNAL OF CRYSTAL GROWTH   Vol. 372   page: 65-72   2013.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2013.03.012

    Web of Science

  50. Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001) Reviewed

    Pristovsek Markus, Kremzow Raimund, Kneissl Michael

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 4 )   2013.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.52.041201

    Web of Science

  51. Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy Reviewed

    Stellmach J., Mehnke F., Frentrup M., Reich C., Schlegel J., Pristovsek M., Wernicke T., Kneissl M.

    JOURNAL OF CRYSTAL GROWTH   Vol. 367   page: 42-47   2013.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2013.01.006

    Web of Science

  52. Interface and Surface Dielectric Anisotropies of GaP/Si(100) Reviewed

    Supplie O., Hannappel T., Pristovsek M., Doescher H.

    2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)     page: 137-+   2013

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  53. Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE Reviewed

    Kadir Abdul, Bellmann Konrad, Simoneit Tino, Pristovsek Markus, Kneissl Michael

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 209 ( 12 ) page: 2487-2491   2012.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201228238

    Web of Science

  54. Indium incorporation efficiency and critical layer thickness of (20(2)over-bar1) InGaN layers on GaN Reviewed

    Ploch Simon, Wernicke Tim, Frentrup Martin, Pristovsek Markus, Weyers Markus, Kneissl Michael

    APPLIED PHYSICS LETTERS   Vol. 101 ( 20 )   2012.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4767336

    Web of Science

  55. Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy Reviewed

    Ploch Simon, Wernicke Tim, Thalmair Johannes, Lohr Matthias, Pristovsek Markus, Zweck Josef, Weyers Markus, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 356   page: 70-74   2012.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2012.07.016

    Web of Science

  56. MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire Reviewed

    Stellmach J., Frentrup M., Mehnke F., Pristovsek M., Wernicke T., Kneissl M.

    JOURNAL OF CRYSTAL GROWTH   Vol. 355 ( 1 ) page: 59-62   2012.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2012.06.047

    Web of Science

  57. In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces Reviewed

    Supplie Oliver, Hannappel Thomas, Pristovsek Markus, Doescher Henning

    PHYSICAL REVIEW B   Vol. 86 ( 3 )   2012.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.86.035308

    Web of Science

  58. Growth and characterizations of semipolar (11(2)over-bar2) InN Reviewed

    Dinh Duc V., Skuridina D., Solopow S., Frentrup M., Pristovsek M., Vogt P., Kneissl M., Ivaldi F., Kret S., Szczepanska A.

    JOURNAL OF APPLIED PHYSICS   Vol. 112 ( 1 )   2012.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4733997

    Web of Science

  59. Surface diffusion and layer morphology of (11(2)over-bar2) GaN grown by metal-organic vapor phase epitaxy Reviewed

    Ploch Simon, Wernicke Tim, Dinh Duc V., Pristovsek Markus, Kneissl Michael

    JOURNAL OF APPLIED PHYSICS   Vol. 111 ( 3 )   2012.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3682513

    Web of Science

  60. Comparison study of N- and In-polar {0001} InN layers grown by MOVPE Reviewed

    Dinh Duc V., Pristovsek M., Solopow S., Skuridina D., Kneissl M.

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   Vol. 9 ( 3-4 ) page: 977-981   2012

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.201100093

    Web of Science

  61. Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy Reviewed

    Kadir Abdul, Meissner Christian, Schwaner Tilman, Pristovsek Markus, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 334 ( 1 ) page: 40-45   2011.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2011.08.003

    Web of Science

  62. Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy Reviewed

    Pristovsek Markus, Kadir Abdul, Meissner Christian, Schwaner Tilman, Leyer Martin, Kneissl Michael

    JOURNAL OF APPLIED PHYSICS   Vol. 110 ( 7 )   2011.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3647782

    Web of Science

  63. Single phase {11(2)over-bar2} GaN on (10(1)over-bar0) sapphire grown by metal-organic vapor phase epitaxy Reviewed

    Ploch Simon, Park Jae Bum, Stellmach Joachim, Schwaner Tilman, Frentrup Martin, Niermann Tore, Wernicke Tim, Pristovsek Markus, Lehmann Michael, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 331 ( 1 ) page: 25-28   2011.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2011.06.057

    Web of Science

  64. Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal-Organic Vapour Phase Epitaxy Reviewed

    Ivaldi Francesco, Meissner Christian, Domagala Jaroslaw, Kret Slawomir, Pristovsek Markus, Hoegele Michael, Kneissl Michael

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 3 )   2011.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.50.031004

    Web of Science

  65. Crystal orientation of GaN layers on (10(1)over-bar0) m-plane sapphire Reviewed

    Frentrup Martin, Ploch Simon, Pristovsek Markus, Kneissl Michael

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 248 ( 3 ) page: 583-587   2011.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201046489

    Web of Science

  66. High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor Reviewed

    Stellmach J., Pristovsek M., Savas Oe, Schlegel J., Yakovlev E. V., Kneissl M.

    JOURNAL OF CRYSTAL GROWTH   Vol. 315 ( 1 ) page: 229-232   2011.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2010.06.036

    Web of Science

  67. Determination of the complex linear electro-optic coefficient of GaAs and InP Reviewed

    Pristovsek Markus

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 247 ( 8 ) page: 1974-1978   2010.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.200983950

    Web of Science

  68. Orientation control of GaN {1 1 (2)over-bar 2} and {1 0 (1)over-bar (3)over-bar} grown on (1 0 (1)over-bar 0) sapphire by metal-organic vapor phase epitaxy Reviewed

    Ploch Simon, Frentrup Martin, Wernicke Tim, Pristovsek Markus, Weyers Markus, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 312 ( 15 ) page: 2171-2174   2010.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2010.04.043

    Web of Science

  69. Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source Reviewed

    Kremzow Raimund, Pristovsek Markus, Stellmach Joachim, Savas Oezguer, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 312 ( 12-13 ) page: 1983-1985   2010.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2010.03.019

    Web of Science

  70. Growth of semipolar (10(1)over-bar(3)over-bar) InN on m-plane sapphire using MOVPE Reviewed

    Dinh Duc V., Pristovsek M., Kremzow R., Kneissl M.

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 4 ( 5-6 ) page: 127-129   2010.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssr.201004043

    Web of Science

  71. Shape of indium nitride quantum dots and nanostructures grown by metal organic vapour phase epitaxy Reviewed

    Ploch Simon, Meissner Christian, Pristovsek Markus, Kneissl Michael

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2   Vol. 6   page: S574-S577   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.200880938

    Web of Science

  72. Growth mode of InGaN on GaN (0001) in MOVPE Reviewed

    Pristovsek M., Stellmach J., Leyer M., Kneissl M.

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2   Vol. 6   page: S565-S569   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.200880915

    Web of Science

  73. Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE Reviewed

    Meissner Christian, Ploch Simon, Pristovsek Markus, Kneissl Michael

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2   Vol. 6   page: S545-S548   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.200880872

    Web of Science

  74. Growth and characterization of manganese-doped InAsP Reviewed

    Pristovsek M., Meissner Ch., Kneissl M., Jakomin R., Vantaggio S., Tarricone L.

    JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 23 ) page: 5028-5031   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2008.08.020

    Web of Science

  75. Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal-organic vapor phase epitaxy Reviewed

    Kremzow Raimund, Pristovsek Markus, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 23 ) page: 4751-4753   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2008.07.047

    Web of Science

  76. The critical thickness of InGaN on (0001)GaN Reviewed

    Leyer M., Stellmach J., Meissner Ch., Pristovsek M., Kneissl M.

    JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 23 ) page: 4913-4915   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2008.08.021

    Web of Science

  77. Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy Reviewed

    Meissner Christian, Ploch Simon, Leyer Martin, Pristovsek Markus, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 23 ) page: 4959-4962   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2008.07.066

    Web of Science

  78. Properties of InMnP (001) grown by MOVPE Reviewed

    Pristovsek M., Philippou A., Raehmer B., Richter W.

    JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 18 ) page: 4046-4049   2008.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2008.06.069

    Web of Science

  79. In-Situ Monitoring for Nano-Structure Growth in MOVPE Reviewed

    Pristovsek Markus, Richter Wolfgang

    SEMICONDUCTOR NANOSTRUCTURES     page: 67-86   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  80. Segregation and desorption of antimony in InP (001) in MOVPE Reviewed

    Weeke S., Leyer M., Pristovsek M., Brunner F., Weyers M., Richter W.

    JOURNAL OF CRYSTAL GROWTH   Vol. 298   page: 159-162   2007.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2006.10.213

    Web of Science

  81. In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxy Reviewed

    Pristovsek M., Raehmer B., Breusig M., Kremzow R., Richter W.

    JOURNAL OF CRYSTAL GROWTH   Vol. 298   page: 8-11   2007.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2006.10.061

    Web of Science

  82. Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy Reviewed

    Kaspari Christian, Pristovsek Markus, Richter Wolfgang

    JOURNAL OF CRYSTAL GROWTH   Vol. 298   page: 46-49   2007.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2006.10.039

    Web of Science

  83. In situ scanning tunneling microscopy during metal-organic vapor phase epitaxy Reviewed

    Raehmer Bert, Pristovsek Markus, Breusing Markus, Kremzow Raimund, Richter Wolfgang

    APPLIED PHYSICS LETTERS   Vol. 89 ( 6 )   2006.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2335580

    Web of Science

  84. InN growth on sapphire using different nitridation procedures Reviewed

    Drago M, Werner C, Pristovsek M, Pohl UW, Pichter W

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 203 ( 7 ) page: 1622-1625   2006.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.200565414

    Web of Science

  85. Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry Reviewed

    Drago M, Werner C, Pristovsek M, Pohl UW, Richter W

    CRYSTAL RESEARCH AND TECHNOLOGY   Vol. 40 ( 10-11 ) page: 993-996   2005.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/crat.200410474

    Web of Science

  86. A fast reflectance anisotropy spectrometer for in situ growth monitoring Reviewed

    Kaspari C, Pristovsek M, Richter W

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 242 ( 13 ) page: 2561-2569   2005.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.200541143

    Web of Science

  87. Growth of strained GaAsSb layers on GaAs(001) by MOVPE Reviewed

    Pristovsek M, Zorn M, Zeimer U, Weyers M

    JOURNAL OF CRYSTAL GROWTH   Vol. 276 ( 3-4 ) page: 347-353   2005.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2004.11.420

    Web of Science

  88. InN growth and annealing investigations using in-situ spectroscopic ellipsometry Reviewed

    Drago M, Schmidtling T, Werner C, Pristovsek M, Pohl UW, Richter W

    JOURNAL OF CRYSTAL GROWTH   Vol. 272 ( 1-4 ) page: 87-93   2004.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2004.08.040

    Web of Science

  89. Nitrogen-arsenic exchange process and investigation of the nitrided GaAs surfaces in MOVPE Reviewed

    Hoffmann V, Poser F, Kaspari C, Weeke S, Pristovsek M, Richter W

    JOURNAL OF CRYSTAL GROWTH   Vol. 272 ( 1-4 ) page: 30-36   2004.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2004.10.029

    Web of Science

  90. Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110) Reviewed

    Pulci O, Fleischer K, Pristovsek M, Tsukamoto S, Del Sole R, Richter W

    JOURNAL OF PHYSICS-CONDENSED MATTER   Vol. 16 ( 39 ) page: S4367-S4374   2004.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1081/0953-8984/16/39/011

    Web of Science

  91. In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs (001) in molecular beam epitaxy Reviewed

    Pristovsek M, Tsukamoto S

    JOURNAL OF CRYSTAL GROWTH   Vol. 265 ( 3-4 ) page: 425-433   2004.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2004.02.101

    Web of Science

  92. In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy Reviewed

    Pristovsek M, Zorn M, Weyers M

    JOURNAL OF CRYSTAL GROWTH   Vol. 262 ( 1-4 ) page: 78-83   2004.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2003.10.044

    Web of Science

  93. Lateral short range ordering of step bunches in InGaAs/GaAs superlattices Reviewed

    Hanke M, Schmidbauer M, Kohler R, Kirmse H, Pristovsek M

    JOURNAL OF APPLIED PHYSICS   Vol. 95 ( 4 ) page: 1736-1739   2004.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.1640786

    Web of Science

  94. Gallium-rich reconstructions on GaAs(001) Reviewed

    Pristovsek M, Tsukamoto S, Ohtake A, Koguchi N, Orr BG, Schmidt WG, Bernholc J

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 240 ( 1 ) page: 91-98   2003.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  95. In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth Reviewed

    Bell GR, Pristovsek M, Tsukamoto S, Orr BG, Arakawa Y, Koguchi N

    SURFACE SCIENCE   Vol. 544 ( 2-3 ) page: 234-240   2003.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.susc.2003.08.021

    Web of Science

  96. Structure of Ga-stabilized GaAs(001) surfaces at high temperatures Reviewed

    Ohtake A, Tsukamoto S, Pristovsek M, Koguchi N

    APPLIED SURFACE SCIENCE   Vol. 212   page: 146-150   2003.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0169-4332(03)00039-4

    Web of Science

  97. Ga-rich GaAs(001) surfaces observed by STM during high-temperature annealing in MBE Reviewed

    Tsukamoto S, Pristovsek M, Ohtake A, Orr BG, Bell GR, Ohno T, Koguchi N

    JOURNAL OF CRYSTAL GROWTH   Vol. 251 ( 1-4 ) page: 46-50   2003.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  98. Influence of the reconstruction of GaAs (001) on the electro-optical bulk properties Reviewed

    Pristovsek M, Tsukamoto S, Han B, Zettler JT, Richter W

    JOURNAL OF CRYSTAL GROWTH   Vol. 248   page: 254-258   2003.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  99. Novel organopalladium material formed on a sulfur-terminated GaAs(001) surface Reviewed

    Arisawa M, Tsukamoto S, Shimoda M, Pristovsek M, Nishida A

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   Vol. 41 ( 11A ) page: L1197-L1199   2002.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.41.L1197

    Web of Science

  100. Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures Reviewed

    Ohtake A, Tsukamoto S, Pristovsek M, Koguchi N, Ozeki M

    PHYSICAL REVIEW B   Vol. 65 ( 23 )   2002.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.65.233311

    Web of Science

  101. Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE Reviewed

    Haberland K, Kaluza A, Zorn M, Pristovsek M, Hardtdegen H, Weyers M, Zettler JT, Richter W

    JOURNAL OF CRYSTAL GROWTH   Vol. 240 ( 1-2 ) page: 87-97   2002.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  102. In-situ determination of the carrier concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy Reviewed

    Pristovsek M, Tsukamoto S, Koguchi N, Han B, Haberland K, Zettler JT, Richter W, Zorn M, Weyers M

    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   Vol. 188 ( 4 ) page: 1423-1429   2001.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  103. In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy Reviewed

    Pristovsek M, Han B, Zettler JT, Richter W

    JOURNAL OF CRYSTAL GROWTH   Vol. 221   page: 149-155   2000.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  104. Surface structure of ordered InGaP(001): The (2x4) reconstruction Reviewed

    Vogt P, Ludge K, Zorn M, Pristovsek M, Braun W, Richter W, Esser N

    PHYSICAL REVIEW B   Vol. 62 ( 19 ) page: 12601-12604   2000.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  105. Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth Reviewed

    Pristovsek M, Menhal H, Zettler JT, Richter W

    APPLIED SURFACE SCIENCE   Vol. 166 ( 1-4 ) page: 433-436   2000.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  106. Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption Reviewed

    Pristovsek M, Trepk T, Klein M, Zettler JT, Richter W

    JOURNAL OF APPLIED PHYSICS   Vol. 87 ( 3 ) page: 1245-1250   2000.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  107. Atomic structure and composition of the (2X4) reconstruction of InGaP(001) Reviewed

    Vogt P, Ludge K, Zorn M, Pristovsek M, Braun W, Richter W, Esser N

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 18 ( 4 ) page: 2210-2214   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  108. (2x4) GaP(001) surface: Atomic structure and optical anisotropy Reviewed

    Frisch AM, Schmidt WG, Bernholc J, Pristovsek M, Esser N, Richter W

    PHYSICAL REVIEW B   Vol. 60 ( 4 ) page: 2488-2494   1999.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  109. GaP(001) and InP(001): Reflectance anisotropy and surface geometry Reviewed

    Esser N, Schmidt WG, Bernholc J, Frisch AM, Vogt P, Zorn M, Pristovsek M, Richter W, Bechstedt F, Hannappel T, Visbeck S

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 17 ( 4 ) page: 1691-1696   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  110. Comparative study of the GaAs (113), (115), (001), ((1)over-bar(1)over-bar(5)over-bar), ((1)over-bar(1)over-bar(3)over-bar), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy Reviewed

    Pristovsek M, Menhal H, Schmidtling T, Esser N, Richter W

    MICROELECTRONICS JOURNAL   Vol. 30 ( 4-5 ) page: 449-453   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  111. Photoluminescence scanning near-field optical microscopy on III-V quantum dots Reviewed

    Pahlke D, Poser F, Steimetz E, Pristovsek M, Esser N, Richter W

    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   Vol. 170 ( 2 ) page: 401-410   1998.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  112. Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques Reviewed

    Zettler JT, Haberland K, Zorn M, Pristovsek M, Richter W, Kurpas P, Weyers M

    JOURNAL OF CRYSTAL GROWTH   Vol. 195 ( 1-4 ) page: 151-162   1998.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  113. Reconstructions of the GaAs (1 1 3) surface Reviewed

    Pristovsek M, Menhal H, Wehnert T, Zettler JT, Schmidtling T, Esser N, Richter W, Setzer C, Platen J, Jacobi K

    JOURNAL OF CRYSTAL GROWTH   Vol. 195 ( 1-4 ) page: 1-5   1998.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  114. In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere Reviewed

    Hardtdegen H, Pristovsek M, Menhal H, Zettler JT, Richter W, Schmitz D

    JOURNAL OF CRYSTAL GROWTH   Vol. 195 ( 1-4 ) page: 211-216   1998.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  115. Atomic structure of InP(001)-(2x4): A dimer reconstruction Reviewed

    Schmidt WG, Bechstedt F, Esser N, Pristovsek M, Schultz C, Richter W

    PHYSICAL REVIEW B   Vol. 57 ( 23 ) page: 14596-14599   1998.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  116. Response of the surface dielectric function to dynamic surface modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry Reviewed

    Zettler JT, Pristovsek M, Trepk T, Shkrebtii A, Steimetz E, Zorn M, Richter W

    THIN SOLID FILMS   Vol. 313   page: 537-543   1998.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  117. Ellipsometric and reflectance-anisotropy measurements on rotating samples Reviewed

    Haberland K, Hunderi O, Pristovsek M, Zettler JT, Richter W

    THIN SOLID FILMS   Vol. 313   page: 620-624   1998.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  118. Structure of InP (001) surfaces prepared by decapping and by ion bombardment and annealing Reviewed

    Pahlke D, Kinsky J, Schultz C, Pristovsek M, Zorn M, Esser N, Richter W

    PHYSICAL REVIEW B   Vol. 56 ( 4 ) page: R1661-R1663   1997.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  119. Optical anisotropies of InP(001) surfaces Reviewed

    Goletti C, Esser N, ReschEsser U, Wagner V, Foeller J, Pristovsek M, Richter W

    JOURNAL OF APPLIED PHYSICS   Vol. 81 ( 8 ) page: 3611-3615   1997.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  120. In situ surface passivation of III-V semiconductors in MOVPE by amorphous As and P layers Reviewed

    Knorr K, Pristovsek M, ReschEsser U, Esser N, Zorn M, Richter W

    JOURNAL OF CRYSTAL GROWTH   Vol. 170 ( 1-4 ) page: 230-236   1997.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  121. Scanning-tunneling-microscopy study of InP(001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples Reviewed

    Esser N, ReschEsser U, Pristovsek M, Richter W

    PHYSICAL REVIEW B   Vol. 53 ( 20 ) page: 13257-13259   1996.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  122. Real time diagnostics of semiconductor surface modifications by reflectance anisotropy spectroscopy Reviewed

    Zettler JT, Richter W, Ploska K, Zorn M, Rumberg J, Meyne C, Pristovsek M

    SEMICONDUCTOR CHARACTERIZATION     page: 537-543   1996

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  123. Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001) Reviewed

    Zettler JT, Wethkamp T, Zorn M, Pristovsek M, Meyne C, Ploska K, Richter W

    APPLIED PHYSICS LETTERS   Vol. 67 ( 25 ) page: 3783-3785   1995.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  124. Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001) Reviewed

    Zettler JT, Rumberg J, Ploska K, Stahrenberg K, Pristovsek M, Richter W, Wassermeier M, Schutzendube P, Behrend J, Daweritz L

    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   Vol. 152 ( 1 ) page: 35-47   1995.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  125. Metalorganic vapour phase epitaxial growth on vicinal GaAs (001) surfaces studied by reflectance anisotropy spectroscopy Reviewed

    Ploska K, Pristovsek M, Richter W, Jonsson J, Kamiya I, Zettler JT

    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   Vol. 152 ( 1 ) page: 49-59   1995.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  126. SURFACE PROCESSES BEFORE AND DURING GROWTH OF GAAS(001) Reviewed

    PLOSKA K, ZETTLER JT, RICHTER W, JONSSON J, REINHARDT F, RUMBERG J, PRISTOVSEK M, ZORN M, WESTWOOD D, WILLIAMS RH

    JOURNAL OF CRYSTAL GROWTH   Vol. 145 ( 1-4 ) page: 44-52   1994.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  127. EFFICIENCY OF ARSENIC AND PHOSPHORUS PRECURSORS INVESTIGATED BY REFLECTANCE ANISOTROPY SPECTROSCOPY Reviewed

    KURPAS P, JONSSON J, RICHTER W, GUTSCHE D, PRISTOVSEK M, ZORN M

    JOURNAL OF CRYSTAL GROWTH   Vol. 145 ( 1-4 ) page: 36-43   1994.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

▼display all

Presentations 14

  1. Where have all the carriers gone? The last barrier bound state model of LEDs Invited International conference

    PRISTOVSEK Markus

    Seminar Friday at Osram Semiconductors 

     More details

    Event date: 2015.10.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Osram Semiconductors, Regensburg, Germany   Country:Germany  

  2. Can semipolar LEDs realise their promise? Invited International conference

    PRISTOVSEK Markus

    PolarCoN Winter School 2015 

     More details

    Event date: 2015.3.3 - 2015.3.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Reisenburg   Country:Germany  

  3. When the surface rules: topography, defects or facets, and the limit of in-situ monitoring Invited International conference

    PRISTOVSEK Markus

    17th International Conference on Crystal Growth and Epitaxy 

     More details

    Event date: 2013.8.11 - 2013.8.13

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Warzaw   Country:Poland  

  4. Low-cost high-efficiency GaN LEDs grown on 6-inch silicon Invited International conference

    PRISTOVSEK Markus

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2013) 

     More details

    Event date: 2013.1.28 - 2013.2.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  5. Growth of In(Ga)As and In(Ga)N Nanostructures by Metal-Organic Vapour Phase Epitaxy Invited International conference

    PRISTOVSEK Markus

    Nichia Course 

     More details

    Event date: 2011.5.29

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  6. Growth of InN by Metal-Organic Vapour Phase Epitaxy Invited International conference

    PRISTOVSEK Markus

    Spring meeting of the European Material Research Society 

     More details

    Event date: 2011.5.9 - 2011.5.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nice   Country:France  

  7. In-situ Monitoring of Doping with Reflectance Anisotropy Spectroscopy Invited

    PRISTOVSEK Markus

    3rd NanoCharm Workshop on Non-Destructive Real Time Process Control 

     More details

    Event date: 2010.10.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  8. Metal-Organic Vapour Phase Epitaxy of Nitride Semiconductors Invited International conference

    PRISTOVSEK Markus

    IInd Rainbow-Workshop 

     More details

    Event date: 2010.8.31

    Language:English   Presentation type:Oral presentation (general)  

    Country:Spain  

  9. Advanced In-situ Monitoring of MOVPE Invited International conference

    PRISTOVSEK Markus

    SemiconNano 2009 

     More details

    Event date: 2009.8.9 - 2009.8.14

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  10. Surface and thin film analysis during vapour phase epitaxial growth Invited

    PRISTOVSEK Markus

    13th International Summer School on Crystal Growth 

     More details

    Event date: 2007.8.5 - 2007.8.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Park City, Utah   Country:United States  

  11. State of the Art of in-situ Monitoring in Metal Organic Vapour Phase Epitaxy Invited

    PRISTOVSEK Markus

    Anan Special Seminar 

     More details

    Event date: 2007.8.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  12. In-situ STM in MOVPE: realtime, realspace in-situ monitoring Invited International conference

    PRISTOVSEK Markus

    13th International Conference for Metal-organic Vapor Phase Epitaxy 

     More details

    Event date: 2006.5.22 - 2006.5.26

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  13. In-situ Scanning Tunneling Microscopy in MOVPE - Promises, Challenges, Results Invited International conference

    PRISTOVSEK Markus

    11th European Workshop on Metal-Organic Vapour Phase Epitaxy 

     More details

    Event date: 2005.5.5 - 2005.5.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Lausanne   Country:Switzerland  

  14. In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy Invited International conference

    PRISTOVSEK Markus

    1st Optics of Surfaces and Interfaces 

     More details

    Event date: 2001.5.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Bad Honnef   Country:Germany  

▼display all

Industrial property rights 1

  1. 高電子移動度トランジスタ装置、半導体多層膜ミラーおよび縦型ダイオード

     More details

    Application no:2020-009453  Date applied:2020.1.23

    Patent/Registration no:C20180467JP#P01  Date registered:2020.1.23 

    Country of applicant:1