Technische Universität Berlin   Institut für Festkörperphysik   Research Assistant (PhD Student)

1996.4 - 2000.10

X-ray characterisation of the basal stacking fault densities of (1122) GaN

Pristovsek Markus, Frentrup Martin, Zhu Tongtong, Kusch Gunnar, Humphreys Colin J.

CRYSTENGCOMM   Vol. 23 ( 35 ) page： 6059 - 6069   2021.9

The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices

Davydov Valery, Roginskii Evgenii M., Kitaev Yuri, Smirnov Alexander, Eliseyev Ilya, Zavarin Eugene, Lundin Wsevolod, Nechaev Dmitrii, Jmerik Valentin, Smirnov Mikhail, Pristovsek Markus, Shubina Tatiana

NANOMATERIALS   Vol. 11 ( 9 )   2021.9

The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation

Park Jeong-Hwan, Yang Xu, Lee Jun-Yeob, Park Mun-Do, Bae Si-Young, Pristovsek Markus, Amano Hiroshi, Lee Dong-Seon

CHEMICAL SCIENCE   Vol. 12 ( 22 ) page： 7713 - 7719   2021.6

A debut for AlPN

Markus Pristovsek

compound semiconductor   Vol. 27 ( 3 ) page： 40 - 43   2021.5

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography

Avit Geoffrey, Robin Yoann, Liao Yaqiang, Nan Hu, Pristovsek Markus, Amano Hiroshi

SCIENTIFIC REPORTS   Vol. 11 ( 1 )   2021.3

Wurtzite AlPyN1-y: a new III-V compound semiconductor lattice-matched to GaN (0001)

Pristovsek Markus, van Dinh Duc, Liu Ting, Ikarashi Nobuyuki

APPLIED PHYSICS EXPRESS   Vol. 13 ( 11 )   2020.11

Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy

Robin Y., Bournet Q., Avit G., Pristovsek M., Andre Y., Trassoudaine A., Amano H.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 35 ( 11 )   2020.11

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate

Yang Xu, Pristovsek Markus, Nitta Shugo, Liu Yuhuai, Honda Yoshio, Koide Yasuo, Kawarada Hiroshi, Amano Hiroshi

ACS APPLIED MATERIALS & INTERFACES   Vol. 12 ( 41 ) page： 46466 - 46475   2020.10

Increasing the Luminescence Efficiency of Long-Wavelength (In,Ga)N Quantum Well Structures by Electric Field Engineering Using an (Al,Ga)N Capping Layer

Vichi Stefano, Robin Yoann, Sanguinetti Stefano, Pristovsek Markus, Amano Hiroshi

PHYSICAL REVIEW APPLIED   Vol. 14 ( 2 )   2020.8

Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

JOURNAL OF MATERIALS CHEMISTRY C   Vol. 8 ( 25 ) page： 8668 - 8675   2020.7

Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 35 ( 3 )   2020.3

Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

Ye Zheng, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 2 )   2020.2

Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

2D MATERIALS   Vol. 7 ( 1 )   2020.1

Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

Dinh Duc V., Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 34 ( 12 )   2019.12

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

SCIENTIFIC REPORTS   Vol. 9   2019.11

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 516   page： 63 - 66   2019.6

Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

Nan Hu, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming

Robin Yoann, Hemeret Francois, D'Inca Gillian, Pristovsek Markus, Trassoudaine Agnes, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 514   page： 13 - 13   2019.5

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 512   page： 78 - 83   2019.4

Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE

Duc V Dinh, Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH   Vol. 512   page： 100 - 104   2019.4

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 509   page： 50-53   2019.3

Morphological study of InGaN on GaN substrate by supersaturation

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 508   page： 58-65   2019.2

How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

Hu Nan, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 507   page： 205-208   2019.2

MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire

Dinh Duc V., Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH   Vol. 502   page： 14-18   2018.11

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

Robin Y., Pristovsek M., Amano H., Oehler F., Oliver R. A., Humphreys C. J.

JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 18 )   2018.11

Simultaneous Growth of Various InGaN/GaN Core-Shell Microstructures for Color Tunable Device Applications

Robin Yoann, Liao Yaqiang, Pristovsek Markus, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 215 ( 21 )   2018.11

Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 10 )   2018.10

High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

JOURNAL OF CRYSTAL GROWTH   Vol. 498   page： 377-380   2018.9

Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

Barry Ousmane I., Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 12 ( 8 )   2018.8

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

SCIENTIFIC REPORTS   Vol. 8   2018.5

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 11 ( 5 )   2018.5

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy Reviewed

Yang Xu, Nitta Shugo, Nagamatsu Kentaro, Bae Si-Young, Lee Ho-Jun, Liu Yuhuai, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 482   page： 1 - 8   2018.1

Structural and optical properties of Gd implanted GaN with various crystallographic orientations Reviewed

Mackova A., Malinsky P., Jagerova A., Sofer Z., Klimova K., Sedmidubsky D., Pristovsek M., Mikulics M., Lorincik J., Boettger R., Akhmadaliev S.

THIN SOLID FILMS   Vol. 638   page： 63-72   2017.9

Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy Reviewed

Pristovsek Markus, Bellman Konrad, Mehnke Frank, Stellmach Joachim, Wernicke Tim, Kneissl Michael

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 254 ( 8 )   2017.8

Effects of Wavelength and Defect Density on the Efficiency of (In, Ga) N-Based Light-Emitting Diodes Reviewed

Pristovsek Markus, Bao An, Oliver Rachel A., Badcock Tom, Ali Muhammad, Shields Andrew

PHYSICAL REVIEW APPLIED   Vol. 7 ( 6 )   2017.6

Development of Sustainable Smart Society based on Transformative Electronics

Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     2017

Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures Reviewed

Badcock T. J., Ali M., Zhu T., Pristovsek M., Oliver R. A., Shields A. J.

APPLIED PHYSICS LETTERS   Vol. 109 ( 15 )   2016.10

Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence Reviewed

Hocker Matthias, Maier Pascal, Jerg Lisa, Tischer Ingo, Neusser Gregor, Kranz Christine, Pristovsek Markus, Humphreys Colin J., Leute Robert A. R., Heinz Dominik, Rettig Oliver, Scholz Ferdinand, Thonke Klaus

JOURNAL OF APPLIED PHYSICS   Vol. 120 ( 8 )   2016.8

Deoxidation of (001) III-V semiconductors in metal-organic vapour phase epitaxy Reviewed

Kaspari Christian, Pristovsek Markus, Richter Wolfgang

JOURNAL OF APPLIED PHYSICS   Vol. 120 ( 8 )   2016.8

Structural and optical properties of (11(2)over-bar2) InGaN quantum wells compared to (0001) and (11(2)over-bar0) Reviewed

Pristovsek Markus, Han Yisong, Zhu Tongtong, Oehler Fabrice, Tang Fengzai, Oliver Rachel A., Humphreys Colin J., Tytko Darius, Choi Pyuck-Pa, Raabe Dierk, Brunner Frank, Weyers Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 31 ( 8 )   2016.8

The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy Reviewed

Pristovsek Markus, Poser Florian, Richter Wolfgang

MATERIALS RESEARCH EXPRESS   Vol. 3 ( 7 )   2016.7

Toward defect-free semi-polar GaN templates on pre-structured sapphire Reviewed

Han Yisong, Caliebe Marian, Hage Fredrik, Ramasse Quentin, Pristovsek Markus, Zhu Tongtong, Scholz Ferdinand, Humphreys Colin

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 253 ( 5 ) page： 834-839   2016.5

Comparative study of (0001) and (11(2)over-bar2) InGaN based light emitting diodes Reviewed

Pristovsek Markus, Humphreys Colin J., Bauer Sebastian, Knab Manuel, Thonke Klaus, Kozlowski Grzegorz, O'Mahony Donagh, Maaskant Pleun, Corbett Brian

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

MOVPE growth and indium incorporation of polar, semipolar (11(2)over-bar2) and (20(2)over-bar21) InGaN Reviewed

Dinh Duc V., Pristovsek Markus, Kneissl Michael

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 253 ( 1 ) page： 93-98   2016.1

Optimizing GaN (11(2)over-bar2) hetero-epitaxial templates grown on (10(1)over-bar0) sapphire Reviewed

Pristovsek Markus, Frentrup Martin, Han Yisong, Humphreys Colin J.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 253 ( 1 ) page： 61-66   2016.1

Development of semipolar (11-22) LEDs on GaN templates Reviewed

Corbett B., Quan Z., Dinh D. V., Kozlowski G., O'Mahony D., Akhter M., Schulz S., Parbrook P., Maaskant P., Caliebe M., Hocker M., Thonke K., Scholz F., Pristovsek M., Han Y., Humphreys C. J., Brunner F., Weyers M., Meyer T. M., Lymperakis L.

LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX   Vol. 9768   2016

Breakdown of the Green Gap in (0001) InGaN LEDs Reviewed

Pristovsek Markus, Oliver Rachel A., Badcock Tom, Ali Muhammad, Shields Andrew

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)     page： .   2016

Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes Reviewed

Mehnke Frank, Kuhn Christian, Stellmach Joachim, Kolbe Tim, Lobo-Ploch Neysha, Rass Jens, Rothe Mark-Antonius, Reich Christoph, Ledentsov Nikolay Jr., Pristovsek Markus, Wernicke Tim, Kneissl Michael

JOURNAL OF APPLIED PHYSICS   Vol. 117 ( 19 )   2015.5

Low defect large area semi-polar (11(2)over-bar2) GaN grown on patterned (113) silicon Reviewed

Pristovsek Markus, Han Yisong, Zhu Tongtong, Frentrup Martin, Kappers Menno J., Humphreys Colin J., Kozlowski Grzegorz, Maaskant Pleun, Corbett Brian

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 252 ( 5 ) page： 1104-1108   2015.5

Origin of faceted surface hillocks on semi-polar (11(2)over-bar2) GaN templates grown on pre-structured sapphire Reviewed

Han Yisong, Caliebe Marian, Kappers Menno, Scholz Ferdinand, Pristovsek Markus, Humphreys Colin

JOURNAL OF CRYSTAL GROWTH   Vol. 415   page： 170-175   2015.4

Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers Reviewed

Skuridina D., Dinh D. V., Pristovsek M., Lacroix B., Chauvat M. -P., Ruterana P., Kneissl M., Vogt P.

APPLIED SURFACE SCIENCE   Vol. 307   page： 461-467   2014.7

Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy Reviewed

Skuridina D., Dinh D. V., Lacroix B., Ruterana P., Hoffmann M., Sitar Z., Pristovsek M., Kneissl M., Vogt P.

JOURNAL OF APPLIED PHYSICS   Vol. 114 ( 17 )   2013.11

Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy Reviewed

Dinh Duc V., Skuridina D., Solopow S., Pristovsek M., Vogt P., Kneissl M.

JOURNAL OF CRYSTAL GROWTH   Vol. 376   page： 17-22   2013.8

Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy Reviewed

Dinh Duc V., Solopow Sergej, Pristovsek Markus, Kneissl Michael

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

Surface Transitions During InGaN Growth on GaN(0001) in Metal-Organic Vapor Phase Epitaxy Reviewed

Pristovsek Markus, Kadir Abdul, Kneissl Michael

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

Wavelength limits for InGaN quantum wells on GaN Reviewed

Pristovsek Markus

APPLIED PHYSICS LETTERS   Vol. 102 ( 24 )   2013.6

Growth mode transition and relaxation of thin InGaN layers on GaN (0001) Reviewed

Pristovsek Markus, Kadir Abdul, Meissner Christian, Schwaner Tilman, Leyer Martin, Stellmach Joachim, Kneissl Michael, Ivaldi Francesco, Kret Slawomir

JOURNAL OF CRYSTAL GROWTH   Vol. 372   page： 65-72   2013.6

Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001) Reviewed

Pristovsek Markus, Kremzow Raimund, Kneissl Michael

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 4 )   2013.4

Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy Reviewed

Stellmach J., Mehnke F., Frentrup M., Reich C., Schlegel J., Pristovsek M., Wernicke T., Kneissl M.

JOURNAL OF CRYSTAL GROWTH   Vol. 367   page： 42-47   2013.3

Interface and Surface Dielectric Anisotropies of GaP/Si(100) Reviewed

Supplie O., Hannappel T., Pristovsek M., Doescher H.

2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)     page： 137-+   2013

Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE Reviewed

Kadir Abdul, Bellmann Konrad, Simoneit Tino, Pristovsek Markus, Kneissl Michael

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 209 ( 12 ) page： 2487-2491   2012.12

Indium incorporation efficiency and critical layer thickness of (20(2)over-bar1) InGaN layers on GaN Reviewed

Ploch Simon, Wernicke Tim, Frentrup Martin, Pristovsek Markus, Weyers Markus, Kneissl Michael

APPLIED PHYSICS LETTERS   Vol. 101 ( 20 )   2012.11

Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy Reviewed

Ploch Simon, Wernicke Tim, Thalmair Johannes, Lohr Matthias, Pristovsek Markus, Zweck Josef, Weyers Markus, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH   Vol. 356   page： 70-74   2012.10

MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire Reviewed

Stellmach J., Frentrup M., Mehnke F., Pristovsek M., Wernicke T., Kneissl M.

JOURNAL OF CRYSTAL GROWTH   Vol. 355 ( 1 ) page： 59-62   2012.9

In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces Reviewed

Supplie Oliver, Hannappel Thomas, Pristovsek Markus, Doescher Henning

PHYSICAL REVIEW B   Vol. 86 ( 3 )   2012.7

Growth and characterizations of semipolar (11(2)over-bar2) InN Reviewed

Dinh Duc V., Skuridina D., Solopow S., Frentrup M., Pristovsek M., Vogt P., Kneissl M., Ivaldi F., Kret S., Szczepanska A.

JOURNAL OF APPLIED PHYSICS   Vol. 112 ( 1 )   2012.7

Surface diffusion and layer morphology of (11(2)over-bar2) GaN grown by metal-organic vapor phase epitaxy Reviewed

Ploch Simon, Wernicke Tim, Dinh Duc V., Pristovsek Markus, Kneissl Michael

JOURNAL OF APPLIED PHYSICS   Vol. 111 ( 3 )   2012.2

Comparison study of N- and In-polar {0001} InN layers grown by MOVPE Reviewed

Dinh Duc V., Pristovsek M., Solopow S., Skuridina D., Kneissl M.

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   Vol. 9 ( 3-4 ) page： 977-981   2012

Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy Reviewed

Kadir Abdul, Meissner Christian, Schwaner Tilman, Pristovsek Markus, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH   Vol. 334 ( 1 ) page： 40-45   2011.11

Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy Reviewed

Pristovsek Markus, Kadir Abdul, Meissner Christian, Schwaner Tilman, Leyer Martin, Kneissl Michael

JOURNAL OF APPLIED PHYSICS   Vol. 110 ( 7 )   2011.10

Single phase {11(2)over-bar2} GaN on (10(1)over-bar0) sapphire grown by metal-organic vapor phase epitaxy Reviewed

Ploch Simon, Park Jae Bum, Stellmach Joachim, Schwaner Tilman, Frentrup Martin, Niermann Tore, Wernicke Tim, Pristovsek Markus, Lehmann Michael, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH   Vol. 331 ( 1 ) page： 25-28   2011.9

Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal-Organic Vapour Phase Epitaxy Reviewed

Ivaldi Francesco, Meissner Christian, Domagala Jaroslaw, Kret Slawomir, Pristovsek Markus, Hoegele Michael, Kneissl Michael

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 3 )   2011.3

Crystal orientation of GaN layers on (10(1)over-bar0) m-plane sapphire Reviewed

Frentrup Martin, Ploch Simon, Pristovsek Markus, Kneissl Michael

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 248 ( 3 ) page： 583-587   2011.3

High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor Reviewed

Stellmach J., Pristovsek M., Savas Oe, Schlegel J., Yakovlev E. V., Kneissl M.

JOURNAL OF CRYSTAL GROWTH   Vol. 315 ( 1 ) page： 229-232   2011.1

Determination of the complex linear electro-optic coefficient of GaAs and InP Reviewed

Pristovsek Markus

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 247 ( 8 ) page： 1974-1978   2010.8

Orientation control of GaN {1 1 (2)over-bar 2} and {1 0 (1)over-bar (3)over-bar} grown on (1 0 (1)over-bar 0) sapphire by metal-organic vapor phase epitaxy Reviewed

Ploch Simon, Frentrup Martin, Wernicke Tim, Pristovsek Markus, Weyers Markus, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH   Vol. 312 ( 15 ) page： 2171-2174   2010.7

Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source Reviewed

Kremzow Raimund, Pristovsek Markus, Stellmach Joachim, Savas Oezguer, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH   Vol. 312 ( 12-13 ) page： 1983-1985   2010.6

Growth of semipolar (10(1)over-bar(3)over-bar) InN on m-plane sapphire using MOVPE Reviewed

Dinh Duc V., Pristovsek M., Kremzow R., Kneissl M.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 4 ( 5-6 ) page： 127-129   2010.6

Shape of indium nitride quantum dots and nanostructures grown by metal organic vapour phase epitaxy Reviewed

Ploch Simon, Meissner Christian, Pristovsek Markus, Kneissl Michael

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2   Vol. 6   page： S574-S577   2009

Growth mode of InGaN on GaN (0001) in MOVPE Reviewed

Pristovsek M., Stellmach J., Leyer M., Kneissl M.

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2   Vol. 6   page： S565-S569   2009

Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE Reviewed

Meissner Christian, Ploch Simon, Pristovsek Markus, Kneissl Michael

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2   Vol. 6   page： S545-S548   2009

Growth and characterization of manganese-doped InAsP Reviewed

Pristovsek M., Meissner Ch., Kneissl M., Jakomin R., Vantaggio S., Tarricone L.

JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 23 ) page： 5028-5031   2008.11

Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal-organic vapor phase epitaxy Reviewed

Kremzow Raimund, Pristovsek Markus, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 23 ) page： 4751-4753   2008.11

The critical thickness of InGaN on (0001)GaN Reviewed

Leyer M., Stellmach J., Meissner Ch., Pristovsek M., Kneissl M.

JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 23 ) page： 4913-4915   2008.11

Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy Reviewed

Meissner Christian, Ploch Simon, Leyer Martin, Pristovsek Markus, Kneissl Michael

JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 23 ) page： 4959-4962   2008.11

Properties of InMnP (001) grown by MOVPE Reviewed

Pristovsek M., Philippou A., Raehmer B., Richter W.

JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 18 ) page： 4046-4049   2008.8

In-Situ Monitoring for Nano-Structure Growth in MOVPE Reviewed

Pristovsek Markus, Richter Wolfgang

SEMICONDUCTOR NANOSTRUCTURES     page： 67-86   2008

Segregation and desorption of antimony in InP (001) in MOVPE Reviewed

Weeke S., Leyer M., Pristovsek M., Brunner F., Weyers M., Richter W.

JOURNAL OF CRYSTAL GROWTH   Vol. 298   page： 159-162   2007.1

In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxy Reviewed

Pristovsek M., Raehmer B., Breusig M., Kremzow R., Richter W.

JOURNAL OF CRYSTAL GROWTH   Vol. 298   page： 8-11   2007.1

Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy Reviewed

Kaspari Christian, Pristovsek Markus, Richter Wolfgang

JOURNAL OF CRYSTAL GROWTH   Vol. 298   page： 46-49   2007.1

In situ scanning tunneling microscopy during metal-organic vapor phase epitaxy Reviewed

Raehmer Bert, Pristovsek Markus, Breusing Markus, Kremzow Raimund, Richter Wolfgang

APPLIED PHYSICS LETTERS   Vol. 89 ( 6 )   2006.8

InN growth on sapphire using different nitridation procedures Reviewed

Drago M, Werner C, Pristovsek M, Pohl UW, Pichter W

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 203 ( 7 ) page： 1622-1625   2006.5

Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry Reviewed

Drago M, Werner C, Pristovsek M, Pohl UW, Richter W

CRYSTAL RESEARCH AND TECHNOLOGY   Vol. 40 ( 10-11 ) page： 993-996   2005.11

A fast reflectance anisotropy spectrometer for in situ growth monitoring Reviewed

Kaspari C, Pristovsek M, Richter W

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 242 ( 13 ) page： 2561-2569   2005.11

Growth of strained GaAsSb layers on GaAs(001) by MOVPE Reviewed

Pristovsek M, Zorn M, Zeimer U, Weyers M

JOURNAL OF CRYSTAL GROWTH   Vol. 276 ( 3-4 ) page： 347-353   2005.4

InN growth and annealing investigations using in-situ spectroscopic ellipsometry Reviewed

Drago M, Schmidtling T, Werner C, Pristovsek M, Pohl UW, Richter W

JOURNAL OF CRYSTAL GROWTH   Vol. 272 ( 1-4 ) page： 87-93   2004.12

Nitrogen-arsenic exchange process and investigation of the nitrided GaAs surfaces in MOVPE Reviewed

Hoffmann V, Poser F, Kaspari C, Weeke S, Pristovsek M, Richter W

JOURNAL OF CRYSTAL GROWTH   Vol. 272 ( 1-4 ) page： 30-36   2004.12

Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110) Reviewed

Pulci O, Fleischer K, Pristovsek M, Tsukamoto S, Del Sole R, Richter W

JOURNAL OF PHYSICS-CONDENSED MATTER   Vol. 16 ( 39 ) page： S4367-S4374   2004.10

In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs (001) in molecular beam epitaxy Reviewed

Pristovsek M, Tsukamoto S

JOURNAL OF CRYSTAL GROWTH   Vol. 265 ( 3-4 ) page： 425-433   2004.5

In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy Reviewed

Pristovsek M, Zorn M, Weyers M

JOURNAL OF CRYSTAL GROWTH   Vol. 262 ( 1-4 ) page： 78-83   2004.2

Lateral short range ordering of step bunches in InGaAs/GaAs superlattices Reviewed

Hanke M, Schmidbauer M, Kohler R, Kirmse H, Pristovsek M

JOURNAL OF APPLIED PHYSICS   Vol. 95 ( 4 ) page： 1736-1739   2004.2

Gallium-rich reconstructions on GaAs(001) Reviewed

Pristovsek M, Tsukamoto S, Ohtake A, Koguchi N, Orr BG, Schmidt WG, Bernholc J

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 240 ( 1 ) page： 91-98   2003.11

In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth Reviewed

Bell GR, Pristovsek M, Tsukamoto S, Orr BG, Arakawa Y, Koguchi N

SURFACE SCIENCE   Vol. 544 ( 2-3 ) page： 234-240   2003.10

Structure of Ga-stabilized GaAs(001) surfaces at high temperatures Reviewed

Ohtake A, Tsukamoto S, Pristovsek M, Koguchi N

APPLIED SURFACE SCIENCE   Vol. 212   page： 146-150   2003.5

Ga-rich GaAs(001) surfaces observed by STM during high-temperature annealing in MBE Reviewed

Tsukamoto S, Pristovsek M, Ohtake A, Orr BG, Bell GR, Ohno T, Koguchi N

JOURNAL OF CRYSTAL GROWTH   Vol. 251 ( 1-4 ) page： 46-50   2003.4

Influence of the reconstruction of GaAs (001) on the electro-optical bulk properties Reviewed

Pristovsek M, Tsukamoto S, Han B, Zettler JT, Richter W

JOURNAL OF CRYSTAL GROWTH   Vol. 248   page： 254-258   2003.2

Novel organopalladium material formed on a sulfur-terminated GaAs(001) surface Reviewed

Arisawa M, Tsukamoto S, Shimoda M, Pristovsek M, Nishida A

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   Vol. 41 ( 11A ) page： L1197-L1199   2002.11

Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures Reviewed

Ohtake A, Tsukamoto S, Pristovsek M, Koguchi N, Ozeki M

PHYSICAL REVIEW B   Vol. 65 ( 23 )   2002.6

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE Reviewed

Haberland K, Kaluza A, Zorn M, Pristovsek M, Hardtdegen H, Weyers M, Zettler JT, Richter W

JOURNAL OF CRYSTAL GROWTH   Vol. 240 ( 1-2 ) page： 87-97   2002.4

In-situ determination of the carrier concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy Reviewed

Pristovsek M, Tsukamoto S, Koguchi N, Han B, Haberland K, Zettler JT, Richter W, Zorn M, Weyers M

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   Vol. 188 ( 4 ) page： 1423-1429   2001.12

In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy Reviewed

Pristovsek M, Han B, Zettler JT, Richter W

JOURNAL OF CRYSTAL GROWTH   Vol. 221   page： 149-155   2000.12

Surface structure of ordered InGaP(001): The (2x4) reconstruction Reviewed

Vogt P, Ludge K, Zorn M, Pristovsek M, Braun W, Richter W, Esser N

PHYSICAL REVIEW B   Vol. 62 ( 19 ) page： 12601-12604   2000.11

Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth Reviewed

Pristovsek M, Menhal H, Zettler JT, Richter W

APPLIED SURFACE SCIENCE   Vol. 166 ( 1-4 ) page： 433-436   2000.10

Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption Reviewed

Pristovsek M, Trepk T, Klein M, Zettler JT, Richter W

JOURNAL OF APPLIED PHYSICS   Vol. 87 ( 3 ) page： 1245-1250   2000.2

Atomic structure and composition of the (2X4) reconstruction of InGaP(001) Reviewed

Vogt P, Ludge K, Zorn M, Pristovsek M, Braun W, Richter W, Esser N

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 18 ( 4 ) page： 2210-2214   2000

(2x4) GaP(001) surface: Atomic structure and optical anisotropy Reviewed

Frisch AM, Schmidt WG, Bernholc J, Pristovsek M, Esser N, Richter W

PHYSICAL REVIEW B   Vol. 60 ( 4 ) page： 2488-2494   1999.7

GaP(001) and InP(001): Reflectance anisotropy and surface geometry Reviewed

Esser N, Schmidt WG, Bernholc J, Frisch AM, Vogt P, Zorn M, Pristovsek M, Richter W, Bechstedt F, Hannappel T, Visbeck S

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 17 ( 4 ) page： 1691-1696   1999

Comparative study of the GaAs (113), (115), (001), ((1)over-bar(1)over-bar(5)over-bar), ((1)over-bar(1)over-bar(3)over-bar), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy Reviewed

Pristovsek M, Menhal H, Schmidtling T, Esser N, Richter W

MICROELECTRONICS JOURNAL   Vol. 30 ( 4-5 ) page： 449-453   1999

Photoluminescence scanning near-field optical microscopy on III-V quantum dots Reviewed

Pahlke D, Poser F, Steimetz E, Pristovsek M, Esser N, Richter W

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   Vol. 170 ( 2 ) page： 401-410   1998.12

Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques Reviewed

Zettler JT, Haberland K, Zorn M, Pristovsek M, Richter W, Kurpas P, Weyers M

JOURNAL OF CRYSTAL GROWTH   Vol. 195 ( 1-4 ) page： 151-162   1998.12

Reconstructions of the GaAs (1 1 3) surface Reviewed

Pristovsek M, Menhal H, Wehnert T, Zettler JT, Schmidtling T, Esser N, Richter W, Setzer C, Platen J, Jacobi K

JOURNAL OF CRYSTAL GROWTH   Vol. 195 ( 1-4 ) page： 1-5   1998.12

In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere Reviewed

Hardtdegen H, Pristovsek M, Menhal H, Zettler JT, Richter W, Schmitz D

JOURNAL OF CRYSTAL GROWTH   Vol. 195 ( 1-4 ) page： 211-216   1998.12

Atomic structure of InP(001)-(2x4): A dimer reconstruction Reviewed

Schmidt WG, Bechstedt F, Esser N, Pristovsek M, Schultz C, Richter W

PHYSICAL REVIEW B   Vol. 57 ( 23 ) page： 14596-14599   1998.6

Response of the surface dielectric function to dynamic surface modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry Reviewed

Zettler JT, Pristovsek M, Trepk T, Shkrebtii A, Steimetz E, Zorn M, Richter W

THIN SOLID FILMS   Vol. 313   page： 537-543   1998.2

Ellipsometric and reflectance-anisotropy measurements on rotating samples Reviewed

Haberland K, Hunderi O, Pristovsek M, Zettler JT, Richter W

THIN SOLID FILMS   Vol. 313   page： 620-624   1998.2

Structure of InP (001) surfaces prepared by decapping and by ion bombardment and annealing Reviewed

Pahlke D, Kinsky J, Schultz C, Pristovsek M, Zorn M, Esser N, Richter W

PHYSICAL REVIEW B   Vol. 56 ( 4 ) page： R1661-R1663   1997.7

Optical anisotropies of InP(001) surfaces Reviewed

Goletti C, Esser N, ReschEsser U, Wagner V, Foeller J, Pristovsek M, Richter W

JOURNAL OF APPLIED PHYSICS   Vol. 81 ( 8 ) page： 3611-3615   1997.4

In situ surface passivation of III-V semiconductors in MOVPE by amorphous As and P layers Reviewed

Knorr K, Pristovsek M, ReschEsser U, Esser N, Zorn M, Richter W

JOURNAL OF CRYSTAL GROWTH   Vol. 170 ( 1-4 ) page： 230-236   1997.1

Scanning-tunneling-microscopy study of InP(001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples Reviewed

Esser N, ReschEsser U, Pristovsek M, Richter W

PHYSICAL REVIEW B   Vol. 53 ( 20 ) page： 13257-13259   1996.5

Real time diagnostics of semiconductor surface modifications by reflectance anisotropy spectroscopy Reviewed

Zettler JT, Richter W, Ploska K, Zorn M, Rumberg J, Meyne C, Pristovsek M

SEMICONDUCTOR CHARACTERIZATION     page： 537-543   1996

Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001) Reviewed

Zettler JT, Wethkamp T, Zorn M, Pristovsek M, Meyne C, Ploska K, Richter W

APPLIED PHYSICS LETTERS   Vol. 67 ( 25 ) page： 3783-3785   1995.12

Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001) Reviewed

Zettler JT, Rumberg J, Ploska K, Stahrenberg K, Pristovsek M, Richter W, Wassermeier M, Schutzendube P, Behrend J, Daweritz L

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   Vol. 152 ( 1 ) page： 35-47   1995.11

Metalorganic vapour phase epitaxial growth on vicinal GaAs (001) surfaces studied by reflectance anisotropy spectroscopy Reviewed

Ploska K, Pristovsek M, Richter W, Jonsson J, Kamiya I, Zettler JT

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   Vol. 152 ( 1 ) page： 49-59   1995.11

SURFACE PROCESSES BEFORE AND DURING GROWTH OF GAAS(001) Reviewed

PLOSKA K, ZETTLER JT, RICHTER W, JONSSON J, REINHARDT F, RUMBERG J, PRISTOVSEK M, ZORN M, WESTWOOD D, WILLIAMS RH

JOURNAL OF CRYSTAL GROWTH   Vol. 145 ( 1-4 ) page： 44-52   1994.12

EFFICIENCY OF ARSENIC AND PHOSPHORUS PRECURSORS INVESTIGATED BY REFLECTANCE ANISOTROPY SPECTROSCOPY Reviewed

KURPAS P, JONSSON J, RICHTER W, GUTSCHE D, PRISTOVSEK M, ZORN M

JOURNAL OF CRYSTAL GROWTH   Vol. 145 ( 1-4 ) page： 36-43   1994.12

Low-cost high-efficiency GaN LEDs grown on 6-inch silicon Invited International conference

PRISTOVSEK Markus

5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2013) 

Growth of In(Ga)As and In(Ga)N Nanostructures by Metal-Organic Vapour Phase Epitaxy Invited International conference

PRISTOVSEK Markus

Nichia Course 

Growth of InN by Metal-Organic Vapour Phase Epitaxy Invited International conference

PRISTOVSEK Markus

Spring meeting of the European Material Research Society 

In-situ Monitoring of Doping with Reflectance Anisotropy Spectroscopy Invited

PRISTOVSEK Markus

3rd NanoCharm Workshop on Non-Destructive Real Time Process Control 

Metal-Organic Vapour Phase Epitaxy of Nitride Semiconductors Invited International conference

PRISTOVSEK Markus

IInd Rainbow-Workshop 

Advanced In-situ Monitoring of MOVPE Invited International conference

PRISTOVSEK Markus

SemiconNano 2009 

Surface and thin film analysis during vapour phase epitaxial growth Invited

PRISTOVSEK Markus

13th International Summer School on Crystal Growth 

State of the Art of in-situ Monitoring in Metal Organic Vapour Phase Epitaxy Invited

PRISTOVSEK Markus

Anan Special Seminar 

In-situ STM in MOVPE: realtime, realspace in-situ monitoring Invited International conference

PRISTOVSEK Markus

13th International Conference for Metal-organic Vapor Phase Epitaxy 

In-situ Scanning Tunneling Microscopy in MOVPE - Promises, Challenges, Results Invited International conference

PRISTOVSEK Markus

11th European Workshop on Metal-Organic Vapour Phase Epitaxy 

In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy Invited International conference

PRISTOVSEK Markus

1st Optics of Surfaces and Interfaces 

Wurtzite AlPN: A new member of the III-Nitride Family Invited International conference

PRISTOVSEK, Markus

semiconNano 2021 (virtual)  2021.9.1  University di Milano Bicocca, Italy