Updated on 2022/06/29

写真a

 
PRISTOVSEK Markus
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Designated professor
Graduate School
Graduate School of Engineering
Title
Designated professor
Contact information
メールアドレス

Degree 2

  1. Habilitation ( 2011.11   Technische Universität Berlin ) 

  2. Doctor of Natural Science ( 2000.11   Technische Universität Berlin ) 

Research History 6

  1. University of Cambridge   Institute for Material Science and Metallurgy   Senior Research Associate

    2012.10 - 2016.12

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    Country:United Kingdom

  2. Technische Universität Berlin   Institut für Festkörperphysik   Assistent (non tenured lecturer)

    2003.11 - 2012.9

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    Country:Germany

  3. Ferdinand Braun Institut für Höchstfrequenztechnik, Berlin   Post-doctorial Researcher

    2003.3 - 2003.11

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    Country:Germany

  4. National Institute for Materials Science, NIMS   JSPS Fellowship

    2001.10 - 2003.1

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    Country:Japan

  5. National Institute for Materials Science, NIMS   COE Fellow

    2000.11 - 2001.10

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    Country:Japan

  6. Technische Universität Berlin   Institut für Festkörperphysik   Research Assistant (PhD Student)

    1996.4 - 2000.10

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    Country:Germany

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Papers 138

  1. A debut for AlPN

    Markus Pristovsek

    compound semiconductor   Vol. 27 ( 3 ) page: 40 - 43   2121.5

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    Authorship:Lead author, Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  2. Interplay of sidewall damage and light extraction efficiency of micro-LEDs

    Park Jeong-Hwan, Pristovsek Markus, Cai Wentao, Cheong Heajeong, Kumabe Takeru, Lee Dong-Seon, Seong Tae-Yeon, Amano Hiroshi

    OPTICS LETTERS   Vol. 47 ( 9 ) page: 2250 - 2253   2022.5

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    Language:Japanese  

    DOI: 10.1364/OL.456993

    Web of Science

  3. Defect characterization of {10(1)over-bar3) GaN by electron microscopy

    Kusch Gunnar, Frentrup Martin, Hu Nan, Amano Hiroshi, Oliver Rachel A., Pristovsek Markus

    JOURNAL OF APPLIED PHYSICS   Vol. 131 ( 1 )   2022.1

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    Language:Japanese  

    DOI: 10.1063/5.0077084

    Web of Science

  4. X-ray characterisation of the basal stacking fault densities of (1122) GaN

    Pristovsek Markus, Frentrup Martin, Zhu Tongtong, Kusch Gunnar, Humphreys Colin J.

    CRYSTENGCOMM   Vol. 23 ( 35 ) page: 6059 - 6069   2021.9

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    Language:Japanese  

    DOI: 10.1039/d1ce00627d

    Web of Science

  5. The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices

    Davydov Valery, Roginskii Evgenii M., Kitaev Yuri, Smirnov Alexander, Eliseyev Ilya, Zavarin Eugene, Lundin Wsevolod, Nechaev Dmitrii, Jmerik Valentin, Smirnov Mikhail, Pristovsek Markus, Shubina Tatiana

    NANOMATERIALS   Vol. 11 ( 9 )   2021.9

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    Language:Japanese  

    DOI: 10.3390/nano11092396

    Web of Science

  6. The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation

    Park Jeong-Hwan, Yang Xu, Lee Jun-Yeob, Park Mun-Do, Bae Si-Young, Pristovsek Markus, Amano Hiroshi, Lee Dong-Seon

    CHEMICAL SCIENCE   Vol. 12 ( 22 ) page: 7713 - 7719   2021.6

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    Language:Japanese  

    DOI: 10.1039/d1sc01642c

    Web of Science

  7. Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography

    Avit Geoffrey, Robin Yoann, Liao Yaqiang, Nan Hu, Pristovsek Markus, Amano Hiroshi

    SCIENTIFIC REPORTS   Vol. 11 ( 1 )   2021.3

  8. Wurtzite AlPyN1-y: a new III-V compound semiconductor lattice-matched to GaN (0001)

    Pristovsek Markus, van Dinh Duc, Liu Ting, Ikarashi Nobuyuki

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 11 )   2020.11

  9. Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy

    Robin Y., Bournet Q., Avit G., Pristovsek M., Andre Y., Trassoudaine A., Amano H.

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 35 ( 11 )   2020.11

  10. Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate

    Yang Xu, Pristovsek Markus, Nitta Shugo, Liu Yuhuai, Honda Yoshio, Koide Yasuo, Kawarada Hiroshi, Amano Hiroshi

    ACS APPLIED MATERIALS & INTERFACES   Vol. 12 ( 41 ) page: 46466 - 46475   2020.10

  11. Increasing the Luminescence Efficiency of Long-Wavelength (In,Ga)N Quantum Well Structures by Electric Field Engineering Using an (Al,Ga)N Capping Layer

    Vichi Stefano, Robin Yoann, Sanguinetti Stefano, Pristovsek Markus, Amano Hiroshi

    PHYSICAL REVIEW APPLIED   Vol. 14 ( 2 )   2020.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevApplied.14.024018

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  12. Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF MATERIALS CHEMISTRY C   Vol. 8 ( 25 ) page: 8668 - 8675   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/d0tc01369b

    Web of Science

  13. Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 35 ( 3 )   2020.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/ab63f1

    Web of Science

  14. Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

    Ye Zheng, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 2 )   2020.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ab6fb0

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  15. Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    2D MATERIALS   Vol. 7 ( 1 )   2020.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/2053-1583/ab46e6

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  16. Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

    Dinh Duc V., Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 34 ( 12 )   2019.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/ab4d2c

    Web of Science

  17. Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

    Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SCIENTIFIC REPORTS   Vol. 9   2019.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-019-52067-y

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  18. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

    Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 516   page: 63 - 66   2019.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.03.025

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  19. Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

    Nan Hu, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab1252

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  20. Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming

    Robin Yoann, Hemeret Francois, D'Inca Gillian, Pristovsek Markus, Trassoudaine Agnes, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab06ae

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  21. Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 514   page: 13 - 13   2019.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.02.058

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  22. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

    Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 512   page: 78 - 83   2019.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.02.013

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  23. Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE

    Duc V Dinh, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 512   page: 100 - 104   2019.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.02.020

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  24. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

    Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 509   page: 50-53   2019.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.12.007

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  25. Morphological study of InGaN on GaN substrate by supersaturation

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 508   page: 58-65   2019.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.12.028

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  26. How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

    Hu Nan, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 507   page: 205-208   2019.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.11.013

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  27. MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire

    Dinh Duc V., Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 502   page: 14-18   2018.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.09.001

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  28. What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

    Robin Y., Pristovsek M., Amano H., Oehler F., Oliver R. A., Humphreys C. J.

    JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 18 )   2018.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5047240

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  29. Simultaneous Growth of Various InGaN/GaN Core-Shell Microstructures for Color Tunable Device Applications

    Robin Yoann, Liao Yaqiang, Pristovsek Markus, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 215 ( 21 )   2018.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201800361

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  30. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

    Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 10 )   2018.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.105501

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  31. High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 498   page: 377-380   2018.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.07.015

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  32. Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

    Barry Ousmane I., Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 12 ( 8 )   2018.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssr.201800124

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  33. Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

    Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

    SCIENTIFIC REPORTS   Vol. 8   2018.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-018-25473-x

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  34. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 5 )   2018.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.11.051002

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  35. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy Reviewed

    Yang Xu, Nitta Shugo, Nagamatsu Kentaro, Bae Si-Young, Lee Ho-Jun, Liu Yuhuai, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 482   page: 1 - 8   2018.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2017.10.036

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  36. Structural and optical properties of Gd implanted GaN with various crystallographic orientations Reviewed

    Mackova A., Malinsky P., Jagerova A., Sofer Z., Klimova K., Sedmidubsky D., Pristovsek M., Mikulics M., Lorincik J., Boettger R., Akhmadaliev S.

    THIN SOLID FILMS   Vol. 638   page: 63-72   2017.9

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    DOI: 10.1016/j.tsf.2017.07.036

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  37. Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy Reviewed

    Pristovsek Markus, Bellman Konrad, Mehnke Frank, Stellmach Joachim, Wernicke Tim, Kneissl Michael

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 254 ( 8 )   2017.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201600711

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  38. Effects of Wavelength and Defect Density on the Efficiency of (In, Ga) N-Based Light-Emitting Diodes Reviewed

    Pristovsek Markus, Bao An, Oliver Rachel A., Badcock Tom, Ali Muhammad, Shields Andrew

    PHYSICAL REVIEW APPLIED   Vol. 7 ( 6 )   2017.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevApplied.7.064007

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  39. Development of Sustainable Smart Society based on Transformative Electronics

    Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     2017

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  40. Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures Reviewed

    Badcock T. J., Ali M., Zhu T., Pristovsek M., Oliver R. A., Shields A. J.

    APPLIED PHYSICS LETTERS   Vol. 109 ( 15 )   2016.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4964842

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  41. Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence Reviewed

    Hocker Matthias, Maier Pascal, Jerg Lisa, Tischer Ingo, Neusser Gregor, Kranz Christine, Pristovsek Markus, Humphreys Colin J., Leute Robert A. R., Heinz Dominik, Rettig Oliver, Scholz Ferdinand, Thonke Klaus

    JOURNAL OF APPLIED PHYSICS   Vol. 120 ( 8 )   2016.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4961417

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  42. Deoxidation of (001) III-V semiconductors in metal-organic vapour phase epitaxy Reviewed

    Kaspari Christian, Pristovsek Markus, Richter Wolfgang

    JOURNAL OF APPLIED PHYSICS   Vol. 120 ( 8 )   2016.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4961414

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  43. Structural and optical properties of (11(2)over-bar2) InGaN quantum wells compared to (0001) and (11(2)over-bar0) Reviewed

    Pristovsek Markus, Han Yisong, Zhu Tongtong, Oehler Fabrice, Tang Fengzai, Oliver Rachel A., Humphreys Colin J., Tytko Darius, Choi Pyuck-Pa, Raabe Dierk, Brunner Frank, Weyers Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 31 ( 8 )   2016.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/0268-1242/31/8/085007

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  44. The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy Reviewed

    Pristovsek Markus, Poser Florian, Richter Wolfgang

    MATERIALS RESEARCH EXPRESS   Vol. 3 ( 7 )   2016.7

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    DOI: 10.1088/2053-1591/3/7/075902

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  45. Toward defect-free semi-polar GaN templates on pre-structured sapphire Reviewed

    Han Yisong, Caliebe Marian, Hage Fredrik, Ramasse Quentin, Pristovsek Markus, Zhu Tongtong, Scholz Ferdinand, Humphreys Colin

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 253 ( 5 ) page: 834-839   2016.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201552636

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  46. Comparative study of (0001) and (11(2)over-bar2) InGaN based light emitting diodes Reviewed

    Pristovsek Markus, Humphreys Colin J., Bauer Sebastian, Knab Manuel, Thonke Klaus, Kozlowski Grzegorz, O'Mahony Donagh, Maaskant Pleun, Corbett Brian

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    DOI: 10.7567/JJAP.55.05FJ10

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  47. MOVPE growth and indium incorporation of polar, semipolar (11(2)over-bar2) and (20(2)over-bar21) InGaN Reviewed

    Dinh Duc V., Pristovsek Markus, Kneissl Michael

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 253 ( 1 ) page: 93-98   2016.1

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    DOI: 10.1002/pssb.201552274

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  48. Optimizing GaN (11(2)over-bar2) hetero-epitaxial templates grown on (10(1)over-bar0) sapphire Reviewed

    Pristovsek Markus, Frentrup Martin, Han Yisong, Humphreys Colin J.

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 253 ( 1 ) page: 61-66   2016.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201552263

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  49. Development of semipolar (11-22) LEDs on GaN templates Reviewed

    Corbett B., Quan Z., Dinh D. V., Kozlowski G., O'Mahony D., Akhter M., Schulz S., Parbrook P., Maaskant P., Caliebe M., Hocker M., Thonke K., Scholz F., Pristovsek M., Han Y., Humphreys C. J., Brunner F., Weyers M., Meyer T. M., Lymperakis L.

    LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX   Vol. 9768   2016

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1117/12.2204758

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  50. Breakdown of the Green Gap in (0001) InGaN LEDs Reviewed

    Pristovsek Markus, Oliver Rachel A., Badcock Tom, Ali Muhammad, Shields Andrew

    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)     page: .   2016

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  51. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes Reviewed

    Mehnke Frank, Kuhn Christian, Stellmach Joachim, Kolbe Tim, Lobo-Ploch Neysha, Rass Jens, Rothe Mark-Antonius, Reich Christoph, Ledentsov Nikolay Jr., Pristovsek Markus, Wernicke Tim, Kneissl Michael

    JOURNAL OF APPLIED PHYSICS   Vol. 117 ( 19 )   2015.5

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    DOI: 10.1063/1.4921439

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  52. Low defect large area semi-polar (11(2)over-bar2) GaN grown on patterned (113) silicon Reviewed

    Pristovsek Markus, Han Yisong, Zhu Tongtong, Frentrup Martin, Kappers Menno J., Humphreys Colin J., Kozlowski Grzegorz, Maaskant Pleun, Corbett Brian

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 252 ( 5 ) page: 1104-1108   2015.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201451591

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  53. Origin of faceted surface hillocks on semi-polar (11(2)over-bar2) GaN templates grown on pre-structured sapphire Reviewed

    Han Yisong, Caliebe Marian, Kappers Menno, Scholz Ferdinand, Pristovsek Markus, Humphreys Colin

    JOURNAL OF CRYSTAL GROWTH   Vol. 415   page: 170-175   2015.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2014.12.040

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  54. Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers Reviewed

    Skuridina D., Dinh D. V., Pristovsek M., Lacroix B., Chauvat M. -P., Ruterana P., Kneissl M., Vogt P.

    APPLIED SURFACE SCIENCE   Vol. 307   page: 461-467   2014.7

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    DOI: 10.1016/j.apsusc.2014.04.057

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  55. Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy Reviewed

    Skuridina D., Dinh D. V., Lacroix B., Ruterana P., Hoffmann M., Sitar Z., Pristovsek M., Kneissl M., Vogt P.

    JOURNAL OF APPLIED PHYSICS   Vol. 114 ( 17 )   2013.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4828487

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  56. Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy Reviewed

    Dinh Duc V., Skuridina D., Solopow S., Pristovsek M., Vogt P., Kneissl M.

    JOURNAL OF CRYSTAL GROWTH   Vol. 376   page: 17-22   2013.8

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    DOI: 10.1016/j.jcrysgro.2013.04.034

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  57. Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy Reviewed

    Dinh Duc V., Solopow Sergej, Pristovsek Markus, Kneissl Michael

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JD03

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  58. Surface Transitions During InGaN Growth on GaN(0001) in Metal-Organic Vapor Phase Epitaxy Reviewed

    Pristovsek Markus, Kadir Abdul, Kneissl Michael

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JB23

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  59. Wavelength limits for InGaN quantum wells on GaN Reviewed

    Pristovsek Markus

    APPLIED PHYSICS LETTERS   Vol. 102 ( 24 )   2013.6

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    DOI: 10.1063/1.4811560

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  60. Growth mode transition and relaxation of thin InGaN layers on GaN (0001) Reviewed

    Pristovsek Markus, Kadir Abdul, Meissner Christian, Schwaner Tilman, Leyer Martin, Stellmach Joachim, Kneissl Michael, Ivaldi Francesco, Kret Slawomir

    JOURNAL OF CRYSTAL GROWTH   Vol. 372   page: 65-72   2013.6

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    DOI: 10.1016/j.jcrysgro.2013.03.012

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  61. Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001) Reviewed

    Pristovsek Markus, Kremzow Raimund, Kneissl Michael

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 4 )   2013.4

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    DOI: 10.7567/JJAP.52.041201

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  62. Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy Reviewed

    Stellmach J., Mehnke F., Frentrup M., Reich C., Schlegel J., Pristovsek M., Wernicke T., Kneissl M.

    JOURNAL OF CRYSTAL GROWTH   Vol. 367   page: 42-47   2013.3

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    DOI: 10.1016/j.jcrysgro.2013.01.006

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  63. Interface and Surface Dielectric Anisotropies of GaP/Si(100) Reviewed

    Supplie O., Hannappel T., Pristovsek M., Doescher H.

    2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)     page: 137-+   2013

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  64. Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE Reviewed

    Kadir Abdul, Bellmann Konrad, Simoneit Tino, Pristovsek Markus, Kneissl Michael

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 209 ( 12 ) page: 2487-2491   2012.12

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    DOI: 10.1002/pssa.201228238

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  65. Indium incorporation efficiency and critical layer thickness of (20(2)over-bar1) InGaN layers on GaN Reviewed

    Ploch Simon, Wernicke Tim, Frentrup Martin, Pristovsek Markus, Weyers Markus, Kneissl Michael

    APPLIED PHYSICS LETTERS   Vol. 101 ( 20 )   2012.11

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    DOI: 10.1063/1.4767336

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  66. Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy Reviewed

    Ploch Simon, Wernicke Tim, Thalmair Johannes, Lohr Matthias, Pristovsek Markus, Zweck Josef, Weyers Markus, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 356   page: 70-74   2012.10

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    DOI: 10.1016/j.jcrysgro.2012.07.016

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  67. MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire Reviewed

    Stellmach J., Frentrup M., Mehnke F., Pristovsek M., Wernicke T., Kneissl M.

    JOURNAL OF CRYSTAL GROWTH   Vol. 355 ( 1 ) page: 59-62   2012.9

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    DOI: 10.1016/j.jcrysgro.2012.06.047

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  68. In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces Reviewed

    Supplie Oliver, Hannappel Thomas, Pristovsek Markus, Doescher Henning

    PHYSICAL REVIEW B   Vol. 86 ( 3 )   2012.7

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    DOI: 10.1103/PhysRevB.86.035308

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  69. Growth and characterizations of semipolar (11(2)over-bar2) InN Reviewed

    Dinh Duc V., Skuridina D., Solopow S., Frentrup M., Pristovsek M., Vogt P., Kneissl M., Ivaldi F., Kret S., Szczepanska A.

    JOURNAL OF APPLIED PHYSICS   Vol. 112 ( 1 )   2012.7

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    DOI: 10.1063/1.4733997

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  70. Surface diffusion and layer morphology of (11(2)over-bar2) GaN grown by metal-organic vapor phase epitaxy Reviewed

    Ploch Simon, Wernicke Tim, Dinh Duc V., Pristovsek Markus, Kneissl Michael

    JOURNAL OF APPLIED PHYSICS   Vol. 111 ( 3 )   2012.2

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    DOI: 10.1063/1.3682513

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  71. Comparison study of N- and In-polar {0001} InN layers grown by MOVPE Reviewed

    Dinh Duc V., Pristovsek M., Solopow S., Skuridina D., Kneissl M.

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   Vol. 9 ( 3-4 ) page: 977-981   2012

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    DOI: 10.1002/pssc.201100093

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  72. Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy Reviewed

    Kadir Abdul, Meissner Christian, Schwaner Tilman, Pristovsek Markus, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 334 ( 1 ) page: 40-45   2011.11

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    DOI: 10.1016/j.jcrysgro.2011.08.003

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  73. Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy Reviewed

    Pristovsek Markus, Kadir Abdul, Meissner Christian, Schwaner Tilman, Leyer Martin, Kneissl Michael

    JOURNAL OF APPLIED PHYSICS   Vol. 110 ( 7 )   2011.10

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    DOI: 10.1063/1.3647782

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  74. Single phase {11(2)over-bar2} GaN on (10(1)over-bar0) sapphire grown by metal-organic vapor phase epitaxy Reviewed

    Ploch Simon, Park Jae Bum, Stellmach Joachim, Schwaner Tilman, Frentrup Martin, Niermann Tore, Wernicke Tim, Pristovsek Markus, Lehmann Michael, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 331 ( 1 ) page: 25-28   2011.9

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    DOI: 10.1016/j.jcrysgro.2011.06.057

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  75. Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal-Organic Vapour Phase Epitaxy Reviewed

    Ivaldi Francesco, Meissner Christian, Domagala Jaroslaw, Kret Slawomir, Pristovsek Markus, Hoegele Michael, Kneissl Michael

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 3 )   2011.3

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    DOI: 10.1143/JJAP.50.031004

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  76. Crystal orientation of GaN layers on (10(1)over-bar0) m-plane sapphire Reviewed

    Frentrup Martin, Ploch Simon, Pristovsek Markus, Kneissl Michael

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 248 ( 3 ) page: 583-587   2011.3

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    DOI: 10.1002/pssb.201046489

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  77. High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor Reviewed

    Stellmach J., Pristovsek M., Savas Oe, Schlegel J., Yakovlev E. V., Kneissl M.

    JOURNAL OF CRYSTAL GROWTH   Vol. 315 ( 1 ) page: 229-232   2011.1

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    DOI: 10.1016/j.jcrysgro.2010.06.036

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  78. Determination of the complex linear electro-optic coefficient of GaAs and InP Reviewed

    Pristovsek Markus

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 247 ( 8 ) page: 1974-1978   2010.8

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    DOI: 10.1002/pssb.200983950

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  79. Orientation control of GaN {1 1 (2)over-bar 2} and {1 0 (1)over-bar (3)over-bar} grown on (1 0 (1)over-bar 0) sapphire by metal-organic vapor phase epitaxy Reviewed

    Ploch Simon, Frentrup Martin, Wernicke Tim, Pristovsek Markus, Weyers Markus, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 312 ( 15 ) page: 2171-2174   2010.7

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    DOI: 10.1016/j.jcrysgro.2010.04.043

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  80. Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source Reviewed

    Kremzow Raimund, Pristovsek Markus, Stellmach Joachim, Savas Oezguer, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 312 ( 12-13 ) page: 1983-1985   2010.6

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    DOI: 10.1016/j.jcrysgro.2010.03.019

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  81. Growth of semipolar (10(1)over-bar(3)over-bar) InN on m-plane sapphire using MOVPE Reviewed

    Dinh Duc V., Pristovsek M., Kremzow R., Kneissl M.

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 4 ( 5-6 ) page: 127-129   2010.6

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    DOI: 10.1002/pssr.201004043

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  82. Shape of indium nitride quantum dots and nanostructures grown by metal organic vapour phase epitaxy Reviewed

    Ploch Simon, Meissner Christian, Pristovsek Markus, Kneissl Michael

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2   Vol. 6   page: S574-S577   2009

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    DOI: 10.1002/pssc.200880938

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  83. Growth mode of InGaN on GaN (0001) in MOVPE Reviewed

    Pristovsek M., Stellmach J., Leyer M., Kneissl M.

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2   Vol. 6   page: S565-S569   2009

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    DOI: 10.1002/pssc.200880915

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  84. Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE Reviewed

    Meissner Christian, Ploch Simon, Pristovsek Markus, Kneissl Michael

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2   Vol. 6   page: S545-S548   2009

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    DOI: 10.1002/pssc.200880872

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  85. Growth and characterization of manganese-doped InAsP Reviewed

    Pristovsek M., Meissner Ch., Kneissl M., Jakomin R., Vantaggio S., Tarricone L.

    JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 23 ) page: 5028-5031   2008.11

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    DOI: 10.1016/j.jcrysgro.2008.08.020

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  86. Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal-organic vapor phase epitaxy Reviewed

    Kremzow Raimund, Pristovsek Markus, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 23 ) page: 4751-4753   2008.11

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    DOI: 10.1016/j.jcrysgro.2008.07.047

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  87. The critical thickness of InGaN on (0001)GaN Reviewed

    Leyer M., Stellmach J., Meissner Ch., Pristovsek M., Kneissl M.

    JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 23 ) page: 4913-4915   2008.11

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    DOI: 10.1016/j.jcrysgro.2008.08.021

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  88. Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy Reviewed

    Meissner Christian, Ploch Simon, Leyer Martin, Pristovsek Markus, Kneissl Michael

    JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 23 ) page: 4959-4962   2008.11

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    DOI: 10.1016/j.jcrysgro.2008.07.066

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  89. Properties of InMnP (001) grown by MOVPE Reviewed

    Pristovsek M., Philippou A., Raehmer B., Richter W.

    JOURNAL OF CRYSTAL GROWTH   Vol. 310 ( 18 ) page: 4046-4049   2008.8

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    DOI: 10.1016/j.jcrysgro.2008.06.069

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  90. In-Situ Monitoring for Nano-Structure Growth in MOVPE Reviewed

    Pristovsek Markus, Richter Wolfgang

    SEMICONDUCTOR NANOSTRUCTURES     page: 67-86   2008

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  91. Segregation and desorption of antimony in InP (001) in MOVPE Reviewed

    Weeke S., Leyer M., Pristovsek M., Brunner F., Weyers M., Richter W.

    JOURNAL OF CRYSTAL GROWTH   Vol. 298   page: 159-162   2007.1

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    DOI: 10.1016/j.jcrysgro.2006.10.213

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  92. In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxy Reviewed

    Pristovsek M., Raehmer B., Breusig M., Kremzow R., Richter W.

    JOURNAL OF CRYSTAL GROWTH   Vol. 298   page: 8-11   2007.1

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    DOI: 10.1016/j.jcrysgro.2006.10.061

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  93. Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy Reviewed

    Kaspari Christian, Pristovsek Markus, Richter Wolfgang

    JOURNAL OF CRYSTAL GROWTH   Vol. 298   page: 46-49   2007.1

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    DOI: 10.1016/j.jcrysgro.2006.10.039

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  94. In situ scanning tunneling microscopy during metal-organic vapor phase epitaxy Reviewed

    Raehmer Bert, Pristovsek Markus, Breusing Markus, Kremzow Raimund, Richter Wolfgang

    APPLIED PHYSICS LETTERS   Vol. 89 ( 6 )   2006.8

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    DOI: 10.1063/1.2335580

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  95. InN growth on sapphire using different nitridation procedures Reviewed

    Drago M, Werner C, Pristovsek M, Pohl UW, Pichter W

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 203 ( 7 ) page: 1622-1625   2006.5

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    DOI: 10.1002/pssa.200565414

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  96. Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry Reviewed

    Drago M, Werner C, Pristovsek M, Pohl UW, Richter W

    CRYSTAL RESEARCH AND TECHNOLOGY   Vol. 40 ( 10-11 ) page: 993-996   2005.11

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    DOI: 10.1002/crat.200410474

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  97. A fast reflectance anisotropy spectrometer for in situ growth monitoring Reviewed

    Kaspari C, Pristovsek M, Richter W

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 242 ( 13 ) page: 2561-2569   2005.11

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    DOI: 10.1002/pssb.200541143

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  98. Growth of strained GaAsSb layers on GaAs(001) by MOVPE Reviewed

    Pristovsek M, Zorn M, Zeimer U, Weyers M

    JOURNAL OF CRYSTAL GROWTH   Vol. 276 ( 3-4 ) page: 347-353   2005.4

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    DOI: 10.1016/j.jcrysgro.2004.11.420

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  99. InN growth and annealing investigations using in-situ spectroscopic ellipsometry Reviewed

    Drago M, Schmidtling T, Werner C, Pristovsek M, Pohl UW, Richter W

    JOURNAL OF CRYSTAL GROWTH   Vol. 272 ( 1-4 ) page: 87-93   2004.12

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    DOI: 10.1016/j.jcrysgro.2004.08.040

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  100. Nitrogen-arsenic exchange process and investigation of the nitrided GaAs surfaces in MOVPE Reviewed

    Hoffmann V, Poser F, Kaspari C, Weeke S, Pristovsek M, Richter W

    JOURNAL OF CRYSTAL GROWTH   Vol. 272 ( 1-4 ) page: 30-36   2004.12

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    DOI: 10.1016/j.jcrysgro.2004.10.029

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  101. Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110) Reviewed

    Pulci O, Fleischer K, Pristovsek M, Tsukamoto S, Del Sole R, Richter W

    JOURNAL OF PHYSICS-CONDENSED MATTER   Vol. 16 ( 39 ) page: S4367-S4374   2004.10

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    DOI: 10.1081/0953-8984/16/39/011

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  102. In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs (001) in molecular beam epitaxy Reviewed

    Pristovsek M, Tsukamoto S

    JOURNAL OF CRYSTAL GROWTH   Vol. 265 ( 3-4 ) page: 425-433   2004.5

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    DOI: 10.1016/j.jcrysgro.2004.02.101

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  103. In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy Reviewed

    Pristovsek M, Zorn M, Weyers M

    JOURNAL OF CRYSTAL GROWTH   Vol. 262 ( 1-4 ) page: 78-83   2004.2

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    DOI: 10.1016/j.jcrysgro.2003.10.044

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  104. Lateral short range ordering of step bunches in InGaAs/GaAs superlattices Reviewed

    Hanke M, Schmidbauer M, Kohler R, Kirmse H, Pristovsek M

    JOURNAL OF APPLIED PHYSICS   Vol. 95 ( 4 ) page: 1736-1739   2004.2

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    DOI: 10.1063/1.1640786

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  105. Gallium-rich reconstructions on GaAs(001) Reviewed

    Pristovsek M, Tsukamoto S, Ohtake A, Koguchi N, Orr BG, Schmidt WG, Bernholc J

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 240 ( 1 ) page: 91-98   2003.11

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  106. In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth Reviewed

    Bell GR, Pristovsek M, Tsukamoto S, Orr BG, Arakawa Y, Koguchi N

    SURFACE SCIENCE   Vol. 544 ( 2-3 ) page: 234-240   2003.10

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    DOI: 10.1016/j.susc.2003.08.021

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  107. Structure of Ga-stabilized GaAs(001) surfaces at high temperatures Reviewed

    Ohtake A, Tsukamoto S, Pristovsek M, Koguchi N

    APPLIED SURFACE SCIENCE   Vol. 212   page: 146-150   2003.5

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    DOI: 10.1016/S0169-4332(03)00039-4

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  108. Ga-rich GaAs(001) surfaces observed by STM during high-temperature annealing in MBE Reviewed

    Tsukamoto S, Pristovsek M, Ohtake A, Orr BG, Bell GR, Ohno T, Koguchi N

    JOURNAL OF CRYSTAL GROWTH   Vol. 251 ( 1-4 ) page: 46-50   2003.4

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  109. Influence of the reconstruction of GaAs (001) on the electro-optical bulk properties Reviewed

    Pristovsek M, Tsukamoto S, Han B, Zettler JT, Richter W

    JOURNAL OF CRYSTAL GROWTH   Vol. 248   page: 254-258   2003.2

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  110. Novel organopalladium material formed on a sulfur-terminated GaAs(001) surface Reviewed

    Arisawa M, Tsukamoto S, Shimoda M, Pristovsek M, Nishida A

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   Vol. 41 ( 11A ) page: L1197-L1199   2002.11

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    DOI: 10.1143/JJAP.41.L1197

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  111. Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures Reviewed

    Ohtake A, Tsukamoto S, Pristovsek M, Koguchi N, Ozeki M

    PHYSICAL REVIEW B   Vol. 65 ( 23 )   2002.6

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    DOI: 10.1103/PhysRevB.65.233311

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  112. Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE Reviewed

    Haberland K, Kaluza A, Zorn M, Pristovsek M, Hardtdegen H, Weyers M, Zettler JT, Richter W

    JOURNAL OF CRYSTAL GROWTH   Vol. 240 ( 1-2 ) page: 87-97   2002.4

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  113. In-situ determination of the carrier concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy Reviewed

    Pristovsek M, Tsukamoto S, Koguchi N, Han B, Haberland K, Zettler JT, Richter W, Zorn M, Weyers M

    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   Vol. 188 ( 4 ) page: 1423-1429   2001.12

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  114. In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy Reviewed

    Pristovsek M, Han B, Zettler JT, Richter W

    JOURNAL OF CRYSTAL GROWTH   Vol. 221   page: 149-155   2000.12

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  115. Surface structure of ordered InGaP(001): The (2x4) reconstruction Reviewed

    Vogt P, Ludge K, Zorn M, Pristovsek M, Braun W, Richter W, Esser N

    PHYSICAL REVIEW B   Vol. 62 ( 19 ) page: 12601-12604   2000.11

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  116. Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth Reviewed

    Pristovsek M, Menhal H, Zettler JT, Richter W

    APPLIED SURFACE SCIENCE   Vol. 166 ( 1-4 ) page: 433-436   2000.10

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  117. Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption Reviewed

    Pristovsek M, Trepk T, Klein M, Zettler JT, Richter W

    JOURNAL OF APPLIED PHYSICS   Vol. 87 ( 3 ) page: 1245-1250   2000.2

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  118. Atomic structure and composition of the (2X4) reconstruction of InGaP(001) Reviewed

    Vogt P, Ludge K, Zorn M, Pristovsek M, Braun W, Richter W, Esser N

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 18 ( 4 ) page: 2210-2214   2000

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  119. (2x4) GaP(001) surface: Atomic structure and optical anisotropy Reviewed

    Frisch AM, Schmidt WG, Bernholc J, Pristovsek M, Esser N, Richter W

    PHYSICAL REVIEW B   Vol. 60 ( 4 ) page: 2488-2494   1999.7

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  120. GaP(001) and InP(001): Reflectance anisotropy and surface geometry Reviewed

    Esser N, Schmidt WG, Bernholc J, Frisch AM, Vogt P, Zorn M, Pristovsek M, Richter W, Bechstedt F, Hannappel T, Visbeck S

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 17 ( 4 ) page: 1691-1696   1999

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  121. Comparative study of the GaAs (113), (115), (001), ((1)over-bar(1)over-bar(5)over-bar), ((1)over-bar(1)over-bar(3)over-bar), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy Reviewed

    Pristovsek M, Menhal H, Schmidtling T, Esser N, Richter W

    MICROELECTRONICS JOURNAL   Vol. 30 ( 4-5 ) page: 449-453   1999

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  122. Photoluminescence scanning near-field optical microscopy on III-V quantum dots Reviewed

    Pahlke D, Poser F, Steimetz E, Pristovsek M, Esser N, Richter W

    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   Vol. 170 ( 2 ) page: 401-410   1998.12

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  123. Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques Reviewed

    Zettler JT, Haberland K, Zorn M, Pristovsek M, Richter W, Kurpas P, Weyers M

    JOURNAL OF CRYSTAL GROWTH   Vol. 195 ( 1-4 ) page: 151-162   1998.12

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  124. Reconstructions of the GaAs (1 1 3) surface Reviewed

    Pristovsek M, Menhal H, Wehnert T, Zettler JT, Schmidtling T, Esser N, Richter W, Setzer C, Platen J, Jacobi K

    JOURNAL OF CRYSTAL GROWTH   Vol. 195 ( 1-4 ) page: 1-5   1998.12

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  125. In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere Reviewed

    Hardtdegen H, Pristovsek M, Menhal H, Zettler JT, Richter W, Schmitz D

    JOURNAL OF CRYSTAL GROWTH   Vol. 195 ( 1-4 ) page: 211-216   1998.12

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  126. Atomic structure of InP(001)-(2x4): A dimer reconstruction Reviewed

    Schmidt WG, Bechstedt F, Esser N, Pristovsek M, Schultz C, Richter W

    PHYSICAL REVIEW B   Vol. 57 ( 23 ) page: 14596-14599   1998.6

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  127. Response of the surface dielectric function to dynamic surface modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry Reviewed

    Zettler JT, Pristovsek M, Trepk T, Shkrebtii A, Steimetz E, Zorn M, Richter W

    THIN SOLID FILMS   Vol. 313   page: 537-543   1998.2

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  128. Ellipsometric and reflectance-anisotropy measurements on rotating samples Reviewed

    Haberland K, Hunderi O, Pristovsek M, Zettler JT, Richter W

    THIN SOLID FILMS   Vol. 313   page: 620-624   1998.2

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  129. Structure of InP (001) surfaces prepared by decapping and by ion bombardment and annealing Reviewed

    Pahlke D, Kinsky J, Schultz C, Pristovsek M, Zorn M, Esser N, Richter W

    PHYSICAL REVIEW B   Vol. 56 ( 4 ) page: R1661-R1663   1997.7

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  130. Optical anisotropies of InP(001) surfaces Reviewed

    Goletti C, Esser N, ReschEsser U, Wagner V, Foeller J, Pristovsek M, Richter W

    JOURNAL OF APPLIED PHYSICS   Vol. 81 ( 8 ) page: 3611-3615   1997.4

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  131. In situ surface passivation of III-V semiconductors in MOVPE by amorphous As and P layers Reviewed

    Knorr K, Pristovsek M, ReschEsser U, Esser N, Zorn M, Richter W

    JOURNAL OF CRYSTAL GROWTH   Vol. 170 ( 1-4 ) page: 230-236   1997.1

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  132. Scanning-tunneling-microscopy study of InP(001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples Reviewed

    Esser N, ReschEsser U, Pristovsek M, Richter W

    PHYSICAL REVIEW B   Vol. 53 ( 20 ) page: 13257-13259   1996.5

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  133. Real time diagnostics of semiconductor surface modifications by reflectance anisotropy spectroscopy Reviewed

    Zettler JT, Richter W, Ploska K, Zorn M, Rumberg J, Meyne C, Pristovsek M

    SEMICONDUCTOR CHARACTERIZATION     page: 537-543   1996

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  134. Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001) Reviewed

    Zettler JT, Wethkamp T, Zorn M, Pristovsek M, Meyne C, Ploska K, Richter W

    APPLIED PHYSICS LETTERS   Vol. 67 ( 25 ) page: 3783-3785   1995.12

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  135. Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001) Reviewed

    Zettler JT, Rumberg J, Ploska K, Stahrenberg K, Pristovsek M, Richter W, Wassermeier M, Schutzendube P, Behrend J, Daweritz L

    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   Vol. 152 ( 1 ) page: 35-47   1995.11

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  136. Metalorganic vapour phase epitaxial growth on vicinal GaAs (001) surfaces studied by reflectance anisotropy spectroscopy Reviewed

    Ploska K, Pristovsek M, Richter W, Jonsson J, Kamiya I, Zettler JT

    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   Vol. 152 ( 1 ) page: 49-59   1995.11

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  137. SURFACE PROCESSES BEFORE AND DURING GROWTH OF GAAS(001) Reviewed

    PLOSKA K, ZETTLER JT, RICHTER W, JONSSON J, REINHARDT F, RUMBERG J, PRISTOVSEK M, ZORN M, WESTWOOD D, WILLIAMS RH

    JOURNAL OF CRYSTAL GROWTH   Vol. 145 ( 1-4 ) page: 44-52   1994.12

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  138. EFFICIENCY OF ARSENIC AND PHOSPHORUS PRECURSORS INVESTIGATED BY REFLECTANCE ANISOTROPY SPECTROSCOPY Reviewed

    KURPAS P, JONSSON J, RICHTER W, GUTSCHE D, PRISTOVSEK M, ZORN M

    JOURNAL OF CRYSTAL GROWTH   Vol. 145 ( 1-4 ) page: 36-43   1994.12

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Presentations 17

  1. Wurtzite AlPyN1-y: A new member of the III-Nitride Family Invited International conference

    Markus Pristovsek

    semiconNano 2021 (virtual)  University di Milano Bicocca, Italy

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    Event date: 2021.8 - 2021.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:virtual   Country:Italy  

  2. AlPN on GaN: Extending the III-Nitride Semiconductor Family Invited International conference

    Markus Pristovsek

    Angeltech Virtual Live 2021  2021.4.12  Angel Business Communications Limited

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    Event date: 2021.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:virtual   Country:United Kingdom  

  3. Where have all the carriers gone? The last barrier bound state model of LEDs Invited International conference

    PRISTOVSEK Markus

    Seminar Friday at Osram Semiconductors 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Osram Semiconductors, Regensburg, Germany   Country:Germany  

  4. Can semipolar LEDs realise their promise? Invited International conference

    PRISTOVSEK Markus

    PolarCoN Winter School 2015 

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    Event date: 2015.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Reisenburg   Country:Germany  

  5. When the surface rules: topography, defects or facets, and the limit of in-situ monitoring Invited International conference

    PRISTOVSEK Markus

    17th International Conference on Crystal Growth and Epitaxy 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Warzaw   Country:Poland  

  6. Low-cost high-efficiency GaN LEDs grown on 6-inch silicon Invited International conference

    PRISTOVSEK Markus

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  7. Growth of In(Ga)As and In(Ga)N Nanostructures by Metal-Organic Vapour Phase Epitaxy Invited International conference

    PRISTOVSEK Markus

    Nichia Course 

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    Event date: 2011.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  8. Growth of InN by Metal-Organic Vapour Phase Epitaxy Invited International conference

    PRISTOVSEK Markus

    Spring meeting of the European Material Research Society 

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    Event date: 2011.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nice   Country:France  

  9. In-situ Monitoring of Doping with Reflectance Anisotropy Spectroscopy Invited

    PRISTOVSEK Markus

    3rd NanoCharm Workshop on Non-Destructive Real Time Process Control 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  10. Metal-Organic Vapour Phase Epitaxy of Nitride Semiconductors Invited International conference

    PRISTOVSEK Markus

    IInd Rainbow-Workshop 

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    Event date: 2010.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Spain  

  11. Advanced In-situ Monitoring of MOVPE Invited International conference

    PRISTOVSEK Markus

    SemiconNano 2009 

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    Event date: 2009.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  12. Surface and thin film analysis during vapour phase epitaxial growth Invited

    PRISTOVSEK Markus

    13th International Summer School on Crystal Growth 

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    Event date: 2007.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Park City, Utah   Country:United States  

  13. State of the Art of in-situ Monitoring in Metal Organic Vapour Phase Epitaxy Invited

    PRISTOVSEK Markus

    Anan Special Seminar 

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    Event date: 2007.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  14. In-situ STM in MOVPE: realtime, realspace in-situ monitoring Invited International conference

    PRISTOVSEK Markus

    13th International Conference for Metal-organic Vapor Phase Epitaxy 

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    Event date: 2006.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  15. In-situ Scanning Tunneling Microscopy in MOVPE - Promises, Challenges, Results Invited International conference

    PRISTOVSEK Markus

    11th European Workshop on Metal-Organic Vapour Phase Epitaxy 

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    Event date: 2005.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Lausanne   Country:Switzerland  

  16. In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy Invited International conference

    PRISTOVSEK Markus

    1st Optics of Surfaces and Interfaces 

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    Event date: 2001.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Bad Honnef   Country:Germany  

  17. Wurtzite AlPN: A new member of the III-Nitride Family Invited International conference

    PRISTOVSEK, Markus

    semiconNano 2021 (virtual)  2021.9.1  University di Milano Bicocca, Italy

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:virtual   Country:Italy  

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Research Project for Joint Research, Competitive Funding, etc. 2

  1. Optical and transport properties of 2D wide-gap nanoheterostructures based on AlGaN

    Grant number:JPJSBP120214806  2021.4 - 2023.3

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    Authorship:Principal investigator  Grant type:Competitive

    Direct Cost: \4870000 )

  2. Reversed-polarity III-nitride Sensors for Enhanced UV-detection (ReSensE) International coauthorship

    Grant number:898704 - ReSensE  2020.12 - 2022.9

    European Commission  Marie Curie Outgoing Fellowship 

    Pietro Pampili

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    Authorship:Coinvestigator(s)  Grant type:Competitive

    Grant amount:\24400000 ( Direct Cost: \1934455 、 Indirect Cost:\247000 )

KAKENHI (Grants-in-Aid for Scientific Research) 1

  1. Development of the novel next generation III-Nitride semiconductor wurtzite AlPN

    Grant number:21K03418  2021.4 - 2024.3

    PRISTOVSEK M.

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    Authorship:Principal investigator 

    Grant amount:\4160000 ( Direct Cost: \3200000 、 Indirect Cost:\960000 )

Industrial property rights 1

  1. 高電子移動度トランジスタ装置、半導体多層膜ミラーおよび縦型ダイオード

    プリストフセクマーコス

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    Applicant:国立大学法人名古屋大学

    Application no:2020-009453  Date applied:2020.1

    Announcement no:2021-118232  Date announced:2021.8

    Patent/Registration no:JP 2021 118232  Date registered:2021.1 

 

Teaching Experience (On-campus) 1

  1. G30 Lecture: Semiconductor Devices

    2020

 

Media Coverage 1

  1. 名大、GaN結晶に格子整合する新たな窒化物半導体「AIPN」の合成に成功 Internet

    マイナビニュース  2020.11