Faculty Profiles - KUSHIMOTO Maki

Papers - KUSHIMOTO Maki

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Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 514 page： 13-13 2019.5

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 509 page： 50 - 53 2019.3

Morphological study of InGaN on GaN substrate by supersaturation

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 508 page： 58 - 65 2019.2

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 12 ( 2 ) 2019.2

Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core- shell nanorods

Robin Y., Evropeitsev E. A., Shubina T. V., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Eliseyev I. A., Bae S. Y., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

NANOSCALE Vol. 11 ( 1 ) page： 193 - 199 2019.1

Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Murakami Satoshi, Kushimoto Maki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 9 ) 2018.9

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

SCIENTIFIC REPORTS Vol. 8 2018.5

m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates

Tanaka Atsushi, Ando Yuto, Nagamatsu Kentaro, Deki Manato, Cheong Heajeong, Ousmane Barry, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 215 ( 9 ) 2018.5

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 11 ( 5 ) 2018.5

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Yamamoto Tetsuya, Usami Shigeyoshi, Kushimoto Maki, Murakami Satoshi, Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 255 ( 5 ) 2018.5

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Sugawara Yoshihiro, Yao Yong-Zhao, Ishikawa Yukari

APPLIED PHYSICS LETTERS Vol. 112 ( 18 ) 2018.4

Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 214 ( 8 ) 2017.8

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Tanaka Atsushi, Barry Ousmane, Nagamatsu Kentaro, Matsushita Junya, Deki Manato, Ando Yuto, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 214 ( 8 ) 2017.8

Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer

Lee Ho-Jun, Bae Si-Young, Lekhal Kaddour, Tamura Akira, Suzuki Takafumi, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 547 - 551 2017.6

Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer

Bae S. -Y., Lekhal K., Lee H. -J., Mitsunari T., Min J. -W., Lee D. -S., Kushimoto M., Honda Y., Amano H.

JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 110 - 113 2017.6

Development of Sustainable Smart Society based on Transformative Electronics

Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) page： . 2017

Growth of semipolar (1-101) high-indium-content InGaN quantum wells Reviewed

Maki Kushimoto, Yoshio Honda, Hiroshi Amano

Japanese Journal of Applied Physics Vol. 55 ( 5S ) page： 05FA10 2016.4

Study of radiation detection properties of GaN pn diode Reviewed

Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano

Japanese Journal of Applied Physics Vol. 55 ( 6S ) page： 05FJ02 2016.3

Optically pumped lasing properties of (1-101) InGaN/GaN stripe multi quantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed

Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

Applied Physics Express Vol. 8 ( 2 ) page： 22702 2015.1

Fabrication of InGaN/GaN multiple quantum wells on (1-101) GaN Reviewed

T. Tanikawa, T. Sano, M. Kushimoto, Y. Honda, M. Yamaguchi, and H. Amano

Japanese Journal of Applied Physics Vol. 52 ( 8 ) page： 08JB05 2013.5

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