Faculty Profiles - KUSHIMOTO Maki

Papers - KUSHIMOTO Maki

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Study on Degradation of Deep-Ultraviolet Laser Diode Reviewed

Zhang, ZY; Yoshikawa, A; Kushimoto, M; Sasaoka, C; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 221 ( 21 ) 2024.11

Experimental study of gain characteristics in relation to quantum-well width of deep-ultraviolet laser diodes Reviewed

Zhang, ZY; Kushimoto, M; Yoshikawa, A; Aoto, K; Sasaoka, C; Amano, H

APPLIED PHYSICS LETTERS Vol. 125 ( 18 ) 2024.10

Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping Reviewed

Kumabe, T; Yoshikawa, A; Kawasaki, S; Kushimoto, M; Honda, Y; Arai, M; Suda, J; Amano, H

IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 71 ( 5 ) page： 3396 - 3402 2024.5

Impact of unintentionally formed compositionally graded layer on carrier injection efficiency in AlGaN-based deep-ultraviolet laser diodes Reviewed

Ziyi Zhang, Akira Yoshikawa, Maki Kushimoto, Koji Aoto, Chiaki Sasaoka, and Hiroshi Amano

Applied Physics Letters Vol. 124 ( 6 ) 2024.2

Demonstration of AlN-based Vertical p-n Diodes with Dopant-free Distributed Polarization Doping Reviewed

Takeru Kumabe, Akira Yoshikawa, Seiya Kawasaki, Maki Kushimoto, Yoshio Honda, Manabu Arai, Jun Suda, and Hiroshi Amano

IEEE Transactions on Electron Devices 2024.2

Impact of unintentionally formed compositionally graded layer on carrier injection efficiency in AlGaN-based deep-ultraviolet laser diodes Reviewed

Zhang, ZY; Yoshikawa, A; Kushimoto, M; Aoto, K; Sasaoka, C; Amano, H

APPLIED PHYSICS LETTERS Vol. 124 ( 6 ) 2024.2

単結晶AlN基板を用いたUV-C波長域レーザーダイオード Reviewed

張梓懿，久志本真希，吉川陽，笹岡千秋，Leo J. SCHOWALTER，天野浩

レーザー研究（「高出力短波長光源開発とその応用技術の進展」特集号） Vol. Vol. 52 ( No. 1 ) 2024.1

Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs Reviewed

Yoshikawa, A; Zhang, ZY; Kushimoto, M; Aoto, K; Sasaoka, C; Amano, H

APPLIED PHYSICS LETTERS Vol. 123 ( 22 ) 2023.11

A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes

Nagata, K; Matsubara, T; Saito, Y; Kataoka, K; Narita, T; Horibuchi, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Takeuchi, T; Amano, H

CRYSTALS Vol. 13 ( 3 ) 2023.3

Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing Reviewed

Zhang, ZY; Kushimoto, M; Yoshikawa, A; Aoto, K; Sasaoka, C; Schowalter, LJ; Amano, H

APPLIED PHYSICS LETTERS Vol. 121 ( 22 ) 2022.11

Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes Reviewed

Kushimoto, M; Zhang, ZY; Yoshikawa, A; Aoto, K; Honda, Y; Sasaoka, C; Schowalter, LJ; Amano, H

APPLIED PHYSICS LETTERS Vol. 121 ( 22 ) 2022.11

Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode Reviewed

Nagata, K; Anada, S; Miwa, H; Matsui, S; Boyama, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Amano, H

APPLIED PHYSICS EXPRESS Vol. 15 ( 4 ) 2022.4

Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection Reviewed

Zhang, ZY; Kushimoto, M; Yoshikawa, A; Aoto, K; Schowalter, LJ; Sasaoka, C; Amano, H

APPLIED PHYSICS EXPRESS Vol. 15 ( 4 ) 2022.4

Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED Reviewed

Matsubara, T; Nagatat, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS Vol. 15 ( 4 ) 2022.4

Visualization of depletion layer in AlGaN homojunction p-n junction Reviewed

Nagata, K; Anada, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Yamamoto, K; Hirayama, T; Amano, H

APPLIED PHYSICS EXPRESS Vol. 15 ( 3 ) 2022.3

Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate Invited Reviewed

Kushimoto, M; Zhang, ZY; Honda, Y; Schowalter, LJ; Sasaoka, C; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( 1 ) 2022.1

Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers Reviewed

Matsukura, Y; Inazu, T; Pernot, C; Shibata, N; Kushimoto, M; Deki, M; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS Vol. 14 ( 8 ) 2021.8

Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations Reviewed

Nagata, K; Makino, H; Miwa, H; Matsui, S; Boyama, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Amano, H

APPLIED PHYSICS EXPRESS Vol. 14 ( 8 ) 2021.8

Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate Reviewed

Kushimoto, M; Zhang, ZY; Sugiyama, N; Honda, Y; Schowalter, LJ; Sasaoka, C; Amano, H

APPLIED PHYSICS EXPRESS Vol. 14 ( 5 ) 2021.5

Development of UV-C laser diodes on AlN substrate Invited

Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano

Proc. SPIE Vol. 11686 page： 116860P 2021.3

Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations Invited International coauthorship

F. Piva, C. De Santi, M. Buffolo, M. Deki, M. Kushimoto, H. Amano, H. Tomozawa, N. Shibata, G. Meneghesso, E. Zanoni, M. Meneghini

Proc. SPIE Vol. 11686 page： 116860 2021.3

Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation Reviewed International coauthorship

Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

PHOTONICS RESEARCH Vol. 8 ( 11 ) page： 1786-1791 2020.11

AlN 基板上 AlGaN ヘテロ構造 UVC レーザーダイオード Invited Reviewed

久志本真希

日本結晶成長学会誌 Vol. 47 ( 3 ) page： 47-3-03 2020.10

Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes Reviewed

Zhang Ziyi, Kushimoto Maki, Horita Masahiro, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS LETTERS Vol. 117 ( 15 ) 2020.10

Design and characterization of a low-optical-loss UV-C laser diode Reviewed

Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 9 ) page： . 2020.9

Impact of high-temperature implantation of Mg ions into GaN Reviewed

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 5 ) page： . 2020.5

Experimental observation of high intrinsic thermal conductivity of AlN Reviewed

Cheng Zhe, Koh Yee Rui, Mamun Abdullah, Shi Jingjing, Bai Tingyu, Huynh Kenny, Yates Luke, Liu Zeyu, Li Ruiyang, Lee Eungkyu, Liao Michael E., Wang Yekan, Yu Hsuan Ming, Kushimoto Maki, Luo Tengfei, Goorsky Mark S., Hopkins Patrick E., Amano Hiroshi, Khan Asif, Graham Samuel

PHYSICAL REVIEW MATERIALS Vol. 4 ( 4 ) 2020.4

On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J., Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS LETTERS Vol. 116 ( 12 ) 2020.3

Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 2020.1

Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

2D MATERIALS Vol. 7 ( 1 ) 2020.1

Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

GALLIUM NITRIDE MATERIALS AND DEVICES XV Vol. 11280 2020

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes Reviewed International coauthorship International journal

Liao, YQ; Chen, T; Wang, J; Ando, Y; Yang, X; Watanabe, H; Hirotani, J; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) page： 349 - 352 2020

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 2019.12

A 271.8 nm deep-ultraviolet laser diode for room temperature operation

Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 12 ( 12 ) 2019.12

Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

MICROELECTRONICS RELIABILITY Vol. 100 2019.9

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

AIP ADVANCES Vol. 9 ( 9 ) 2019.9

Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Torigoe Kazuhisa, Kushimoto Maki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 7 ) 2019.7

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 516 page： 63-66 2019.6

Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6

Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

Evropeitsev Evgeniy A., Robin Yoann, Shubina Tatiana V., Bae Si-Young, Nitta Shugo, Kirilenko Demid A., Davydov Valery Y., Smirnov Alexandr N., Toropov Alexey A., Kushimoto Maki, Ivanov Sergey V., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 256 ( 6 ) 2019.6

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 514 page： 13-13 2019.5

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 509 page： 50 - 53 2019.3

Morphological study of InGaN on GaN substrate by supersaturation

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 508 page： 58 - 65 2019.2

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 12 ( 2 ) 2019.2

Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core- shell nanorods

Robin Y., Evropeitsev E. A., Shubina T. V., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Eliseyev I. A., Bae S. Y., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

NANOSCALE Vol. 11 ( 1 ) page： 193 - 199 2019.1

Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Murakami Satoshi, Kushimoto Maki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 9 ) 2018.9

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

SCIENTIFIC REPORTS Vol. 8 2018.5

m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates

Tanaka Atsushi, Ando Yuto, Nagamatsu Kentaro, Deki Manato, Cheong Heajeong, Ousmane Barry, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 215 ( 9 ) 2018.5

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS Vol. 11 ( 5 ) 2018.5

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Yamamoto Tetsuya, Usami Shigeyoshi, Kushimoto Maki, Murakami Satoshi, Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 255 ( 5 ) 2018.5

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Sugawara Yoshihiro, Yao Yong-Zhao, Ishikawa Yukari

APPLIED PHYSICS LETTERS Vol. 112 ( 18 ) 2018.4

Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 214 ( 8 ) 2017.8

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Tanaka Atsushi, Barry Ousmane, Nagamatsu Kentaro, Matsushita Junya, Deki Manato, Ando Yuto, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 214 ( 8 ) 2017.8

Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer

Lee Ho-Jun, Bae Si-Young, Lekhal Kaddour, Tamura Akira, Suzuki Takafumi, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 547 - 551 2017.6

Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer

Bae S. -Y., Lekhal K., Lee H. -J., Mitsunari T., Min J. -W., Lee D. -S., Kushimoto M., Honda Y., Amano H.

JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 110 - 113 2017.6

Development of Sustainable Smart Society based on Transformative Electronics

Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) page： . 2017

Growth of semipolar (1-101) high-indium-content InGaN quantum wells Reviewed

Maki Kushimoto, Yoshio Honda, Hiroshi Amano

Japanese Journal of Applied Physics Vol. 55 ( 5S ) page： 05FA10 2016.4

Study of radiation detection properties of GaN pn diode Reviewed

Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano

Japanese Journal of Applied Physics Vol. 55 ( 6S ) page： 05FJ02 2016.3

Optically pumped lasing properties of (1-101) InGaN/GaN stripe multi quantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed

Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

Applied Physics Express Vol. 8 ( 2 ) page： 22702 2015.1

Fabrication of InGaN/GaN multiple quantum wells on (1-101) GaN Reviewed

T. Tanikawa, T. Sano, M. Kushimoto, Y. Honda, M. Yamaguchi, and H. Amano

Japanese Journal of Applied Physics Vol. 52 ( 8 ) page： 08JB05 2013.5

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Papers - KUSHIMOTO Maki