Applied Physics Letters   Early Career Editorial Advisory Board  

2022.7   

一般社団法人レーザー学会   レーザー学会学術講演会　プログラム委員会F 委員  

2022.6 - 2023.3   

公益社団法人 応用物理学会   機関誌企画・編集委員会  

2022.4 - 2024.3   

International Workshop on Nitride Semiconductors (IWN 2022)   Symposium Program Committee  

2021.10 - 2023.3   

一般社団法人ワイドギャップ半導体学会   企画委員  

2021.7 - 2023.3   

応用物理学会東海支部   庶務幹事補佐  

2019.4 - 2021.3   

SSDM2019実行委員会   実行委員  

2018.8 - 2019.12   

ISPLASMA 2019 実行委員会   実行委員  

2018.4 - 2019.3   

第10回 ナノ構造・エピタキシャル成長講演会   現地担当幹事  

2018.1 - 2018.12   

ISPLASMA 2018 実行委員会   実行委員  

2017.10 - 2018.3   

The International Workshop on UV Materials and Devices 2017 ( IWUMD2017)   IWUMD 実行委員（寄付・展示委員  

2017.2 - 2018.3   

応用物理学会東海支部   幹事  

2017   

International Workshop on Nitride Semiconductors 2018   プログラム委員会・庶務委員  

2016.10 - 2019.3   

第40回論文賞

2023.12   日本結晶成長学会   深紫外線レーザーダイオードにおける室温連続振の実現

張 梓懿, 久志本 真希, 吉川 陽, 笹岡 千秋, 天野 浩

第22回IEEE EDS Japan Joint Chapter Student Award

2023.12   IEEE Electron Devices Society Japan Joint Chapter   Demonstration of AlN-based Vertical p-n Diodes with Dopant-Free Distributed-Polarization Doping

T. Kumabe, A. Yoshikawa, M. Kushimoto, Y. Honda, M. Arai, J. Suda, H. Amano

Best Student Award

2023.11   ICNS-14  

Tatsuhiro Tanaka, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

2023堀場雅夫賞 特別賞

2023.10   株式会社堀場製作所   微細構造計測に向けた小型深紫外レーザー光源の開発

久志本 真希

第1回ダイバーシティ＆インクルージョン賞 女性研究者研究奨励賞

2023.3   公益社団法人　応用物理学会   未踏波長帯域深紫外レーザーダイオードに関する研究

久志本　真希

第42回（2020年度）応用物理学会論文賞

2020.9   公益社団法人　応用物理学会  

張梓懿、久志本真希、酒井忠慶、杉山直治、Leo J. Schowalter、笹岡千秋、天野浩

平成２９年度ナノ構造・エピタキシャル成長分科会 研究奨励賞

2017.7   ナノ構造・エピタキシャル成長分科会   Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells

久志本真希

第37回（2014年秋季）応用物理学会「講演奨励賞」

2015.3   公益社団法人　応用物理学会   (001)Si基板上半極性面InGaN光共振器の 誘導放出特性

久志本真希

電子情報通信学会東海支部学生研究奨励賞(博士)

2014.6   一般社団法人電子情報通信学会東海支部  

久志本真希

日本結晶成長学会ナノエピ分科会　発表奨励賞

2013.6   日本結晶成長学会ナノエピ分科会   加工Si基板上(1-101)InGaN/GaN MQWストライプ結晶の光学特性

久志本真希

電子情報通信学会電子デバイス研究会 論文発表奨励賞

2012.6   電子情報通信学会エレクトロニクスソサイエティ電子デバイス研究専門委員会   Si基板上半極性面(1-101)GaNストライプ上InGaN/GaN多重量子井戸構造の偏光特性

久志本真希

単結晶AlN基板を用いたUV-C波長域レーザーダイオード Reviewed

張 梓懿，久志本 真希，吉川 陽，笹岡 千秋，Leo J. SCHOWALTER，天野 浩

レーザー研究（「高出力短波長光源開発とその応用技術の進展」特集号）   Vol. Vol. 52 ( No. 1 )   2024.1

Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs Reviewed

Yoshikawa, A; Zhang, ZY; Kushimoto, M; Aoto, K; Sasaoka, C; Amano, H

APPLIED PHYSICS LETTERS   Vol. 123 ( 22 )   2023.11

A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes

Nagata, K; Matsubara, T; Saito, Y; Kataoka, K; Narita, T; Horibuchi, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Takeuchi, T; Amano, H

CRYSTALS   Vol. 13 ( 3 )   2023.3

Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing Reviewed

Zhang, ZY; Kushimoto, M; Yoshikawa, A; Aoto, K; Sasaoka, C; Schowalter, LJ; Amano, H

APPLIED PHYSICS LETTERS   Vol. 121 ( 22 )   2022.11

Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes Reviewed

Kushimoto, M; Zhang, ZY; Yoshikawa, A; Aoto, K; Honda, Y; Sasaoka, C; Schowalter, LJ; Amano, H

APPLIED PHYSICS LETTERS   Vol. 121 ( 22 )   2022.11

Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection Reviewed

Zhang, ZY; Kushimoto, M; Yoshikawa, A; Aoto, K; Schowalter, LJ; Sasaoka, C; Amano, H

APPLIED PHYSICS EXPRESS   Vol. 15 ( 4 )   2022.4

Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED Reviewed

Matsubara, T; Nagatat, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS   Vol. 15 ( 4 )   2022.4

Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode Reviewed

Nagata, K; Anada, S; Miwa, H; Matsui, S; Boyama, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Amano, H

APPLIED PHYSICS EXPRESS   Vol. 15 ( 4 )   2022.4

Visualization of depletion layer in AlGaN homojunction p-n junction Reviewed

Nagata, K; Anada, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Yamamoto, K; Hirayama, T; Amano, H

APPLIED PHYSICS EXPRESS   Vol. 15 ( 3 )   2022.3

Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate Invited Reviewed

Kushimoto, M; Zhang, ZY; Honda, Y; Schowalter, LJ; Sasaoka, C; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( 1 )   2022.1

Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers Reviewed

Matsukura, Y; Inazu, T; Pernot, C; Shibata, N; Kushimoto, M; Deki, M; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations Reviewed

Nagata, K; Makino, H; Miwa, H; Matsui, S; Boyama, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Amano, H

APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate Reviewed

Kushimoto, M; Zhang, ZY; Sugiyama, N; Honda, Y; Schowalter, LJ; Sasaoka, C; Amano, H

APPLIED PHYSICS EXPRESS   Vol. 14 ( 5 )   2021.5

Development of UV-C laser diodes on AlN substrate Invited

Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano

Proc. SPIE   Vol. 11686   page： 116860P   2021.3

Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations Invited International coauthorship

F. Piva, C. De Santi, M. Buffolo, M. Deki, M. Kushimoto, H. Amano, H. Tomozawa, N. Shibata, G. Meneghesso, E. Zanoni, M. Meneghini

Proc. SPIE   Vol. 11686   page： 116860   2021.3

Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation Reviewed International coauthorship

Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

PHOTONICS RESEARCH   Vol. 8 ( 11 ) page： 1786-1791   2020.11

AlN 基板上 AlGaN ヘテロ構造 UVC レーザーダイオード Invited Reviewed

久志本 真希

日本結晶成長学会誌   Vol. 47 ( 3 ) page： 47-3-03   2020.10

Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes Reviewed

Zhang Ziyi, Kushimoto Maki, Horita Masahiro, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 117 ( 15 )   2020.10

Design and characterization of a low-optical-loss UV-C laser diode Reviewed

Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 9 ) page： .   2020.9

Impact of high-temperature implantation of Mg ions into GaN Reviewed

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 5 ) page： .   2020.5

Experimental observation of high intrinsic thermal conductivity of AlN Reviewed

Cheng Zhe, Koh Yee Rui, Mamun Abdullah, Shi Jingjing, Bai Tingyu, Huynh Kenny, Yates Luke, Liu Zeyu, Li Ruiyang, Lee Eungkyu, Liao Michael E., Wang Yekan, Yu Hsuan Ming, Kushimoto Maki, Luo Tengfei, Goorsky Mark S., Hopkins Patrick E., Amano Hiroshi, Khan Asif, Graham Samuel

PHYSICAL REVIEW MATERIALS   Vol. 4 ( 4 )   2020.4

On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J., Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 116 ( 12 )   2020.3

Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE     2020.1

Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

2D MATERIALS   Vol. 7 ( 1 )   2020.1

Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

GALLIUM NITRIDE MATERIALS AND DEVICES XV   Vol. 11280   2020

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes Reviewed International coauthorship International journal

Liao, YQ; Chen, T; Wang, J; Ando, Y; Yang, X; Watanabe, H; Hirotani, J; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page： 349 - 352   2020

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS     2019.12

A 271.8 nm deep-ultraviolet laser diode for room temperature operation

Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 12 ( 12 )   2019.12

Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

MICROELECTRONICS RELIABILITY   Vol. 100   2019.9

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

AIP ADVANCES   Vol. 9 ( 9 )   2019.9

Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Torigoe Kazuhisa, Kushimoto Maki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 7 )   2019.7

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 516   page： 63-66   2019.6

Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

Evropeitsev Evgeniy A., Robin Yoann, Shubina Tatiana V., Bae Si-Young, Nitta Shugo, Kirilenko Demid A., Davydov Valery Y., Smirnov Alexandr N., Toropov Alexey A., Kushimoto Maki, Ivanov Sergey V., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 256 ( 6 )   2019.6

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 514   page： 13-13   2019.5

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 509   page： 50 - 53   2019.3

Morphological study of InGaN on GaN substrate by supersaturation

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 508   page： 58 - 65   2019.2

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core- shell nanorods

Robin Y., Evropeitsev E. A., Shubina T. V., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Eliseyev I. A., Bae S. Y., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

NANOSCALE   Vol. 11 ( 1 ) page： 193 - 199   2019.1

Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Murakami Satoshi, Kushimoto Maki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 9 )   2018.9

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

SCIENTIFIC REPORTS   Vol. 8   2018.5

m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates

Tanaka Atsushi, Ando Yuto, Nagamatsu Kentaro, Deki Manato, Cheong Heajeong, Ousmane Barry, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 215 ( 9 )   2018.5

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 11 ( 5 )   2018.5

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Yamamoto Tetsuya, Usami Shigeyoshi, Kushimoto Maki, Murakami Satoshi, Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 255 ( 5 )   2018.5

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Sugawara Yoshihiro, Yao Yong-Zhao, Ishikawa Yukari

APPLIED PHYSICS LETTERS   Vol. 112 ( 18 )   2018.4

Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Tanaka Atsushi, Barry Ousmane, Nagamatsu Kentaro, Matsushita Junya, Deki Manato, Ando Yuto, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer

Lee Ho-Jun, Bae Si-Young, Lekhal Kaddour, Tamura Akira, Suzuki Takafumi, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 468   page： 547 - 551   2017.6

Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer

Bae S. -Y., Lekhal K., Lee H. -J., Mitsunari T., Min J. -W., Lee D. -S., Kushimoto M., Honda Y., Amano H.

JOURNAL OF CRYSTAL GROWTH   Vol. 468   page： 110 - 113   2017.6

Development of Sustainable Smart Society based on Transformative Electronics

Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     page： .   2017

Growth of semipolar (1-101) high-indium-content InGaN quantum wells Reviewed

Maki Kushimoto, Yoshio Honda, Hiroshi Amano

Japanese Journal of Applied Physics   Vol. 55 ( 5S ) page： 05FA10   2016.4

Study of radiation detection properties of GaN pn diode Reviewed

Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano

Japanese Journal of Applied Physics   Vol. 55 ( 6S ) page： 05FJ02   2016.3

Optically pumped lasing properties of (1-101) InGaN/GaN stripe multi quantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed

Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

Applied Physics Express   Vol. 8 ( 2 ) page： 22702   2015.1

Fabrication of InGaN/GaN multiple quantum wells on (1-101) GaN Reviewed

T. Tanikawa, T. Sano, M. Kushimoto, Y. Honda, M. Yamaguchi, and H. Amano

Japanese Journal of Applied Physics   Vol. 52 ( 8 ) page： 08JB05   2013.5

Demonstration of AlN-based Vertical p-n Diodes with Dopant-Free Distributed-Polarization Doping International conference

T. Kumabe, A. Yoshikawa, M. Kushimoto, Y. Honda, M. Arai, J. Suda, and H. Amano

69th Annual IEEE International Electron Devices Meeting (IEDM)  2023.12.12 

Development of Room Temperature Continuous-Wave Deep Ultraviolet Laser Diodes Invited International conference

Maki Kushimoto, Ziyi Zhang, Akira Yoshikawa, Koji Aoto, Yoshio Honda, Leo J Schowalter, Chiaki Sasaoka, Hiroshi Amano

30th International Display Workshops (IDW '23)  2023.12.7 

深紫外線レーザーダイオードにおける室温連続発振の実現 Invited

張 梓懿, 久志本 真希, 吉川 陽, 笹岡 千秋, 天野 浩

第52回結晶成長国内会議（JCCG-52）  2023.12.5 

Study on degradation of deep ultraviolet laser diode International conference

Ziyi Zhang, Maki Kushimoto, Akira Yoshikawa, Chiaki Sasaoka, Hiroshi Amano

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.16 

Demonstration of continuous wave lasing of deep UV Laser diodes on Single-crystal AlN substrate International conference

Yoshio Honda, Yuta Furusawa, Ryoko Tsukamoto, Yoshiki Saito, Koji Okuno, Kengo Nagata, Shinya Boyama, Atsushi Miyazaki, Maki Kushimoto, and Hiroshi Amano

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.13 

Demonstration of UV-C LEDs utilizing p-GaN/MgZnO:Ga hetero-tunnel junction International conference

Tatsuhiro Tanaka, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.17 

Recent Progress of Deep Ultraviolet Laser Diodes on AlN substrate Invited International conference

Maki Kushimoto, Ziyi Zhang, Akira Yoshikawa, Koji Aoto, Yoshio Honda, Leo J Schowalter, Chiaki Sasaoka, Hiroshi Amano

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.14 

Recent developments in high efficiency for deep UV LEDs Invited International conference

Yoshiki Saito, Kengo Nagata, Atsushi Miyazaki, Shinya Boyama, Koji Okuno, Masaki Oya, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Yoshio Honda, Hiroshi Amano, Hisanori Ishiguro, Tetsuya Takeuchi, Kohei Shima, Shigefusa F Chichibu

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.17 

Realization of AlN electron blocking layer with abrupt interface and its subsequent improvement in UV-C light-emitting device characteristics International conference

Akira Yoshikawa, Ziyi Zhang, Maki Kushimoto, Koji Aoto, Chiaki Sasaoka, Hiroshi Amano

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.13 

Demonstration of continuous wave lasing of deep UV Laser diodes on Single-crystal AlN substrate Invited International conference

Z. Zhang, M.Kushimoto, A. Yoshikawa, K. Aoto, Y. Honda, L. J. Schowalter, C. Sasaoka, and H. Amano

The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2023)  2023.6.8 

CW operation of UV-C laser diodes Invited International conference

Maki Kushimoto

The 6th International Workshop on Ultraviolet Materials and Devices (IWUMD Ⅵ)  2023.6.6 

Breakthrough technologies to realize room-temperature continuous-wave deep-ultraviolet laser diodes Invited International conference

Maki Kushimoto

SKM DPG conference  2023.3.29 

[第1回ダイバーシティ＆インクルージョン賞 女性研究者研究奨励賞 受賞記念講演] 未踏波長帯域深紫外レーザーダイオード Invited

久志本真希

第70回　応用物理学会　春季学術講演会  2023.3.16 

Current-injected continuous-wave AlGaN-based UVC laser diodes Invited International conference

Maki Kushimoto, Ziyi Zhang, Akira Yoshikawa, Koji Aoto, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, Hiroshi Amano

SPIE Photonics West　2023  2023.2.1 

AlN基板を用いた深紫外半導体レーザー Invited

久志本真希

2022年度　結晶・評価WG研究会(第２回) /第45回CIRFEセミナー  2022.12.20 

Realization of continuous-wave lasing of AlGaN-based UVC laser diode Invited International conference

Ziyi Zhang，Maki Kushimoto

The 10th Asia-Pacific Workshop on Widegap Semiconductors(APWS2022）  2022.11.17 

Sputtered polycrystalline MgZnO/Al reflective electrodes for AlGaN-based homojunction tunnel junction deep-ultraviolet LEDs International conference

Tatsuhiro Tanaka, Taichi Matsubara, Kengo Nagata, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

4th International Workshop on Gallium Oxide and Related Materials (IWGO2022)  2022.10.24 

Shortest wavelength AlGaN based semiconductor lasers Invited International conference

Maki Kushimoto

40th SPP Physics Conference  2022.10.20 

Fabrication of GaN/AlN Resonant tunneling diodes by MOVPE International conference

D. Iwata, T. Kumabe, H. Watanabe, M. Kushimoto, M. Deki, S. Nitta, A. Tanaka, Y. Honda, H. Amano

International Workshop on Nitride Semiconductors(IWN2022)  2022.10.12 

Continuous-wave lasing of AlGaN-based UVC laser diode by current injection International conference

Z. Zhang, M. Kushimoto, A. Yoshikawa, K. Aoto, L. J. Schowalter, C. Sasaoka, and H. Amano

International Workshop on Nitride Semiconductors(IWN2022)  2022.10.12 

Analysis of the cause of threshold rise of UV-C LD on AlN substrate International conference

M.Kushimoto, Z. Zhang, A. Yoshikawa, K. Aoto, Y. Honda, L. J. Schowalter, C. Sasaoka, and H. Amano

International Workshop on Nitride Semiconductors(IWN2022)  2022.10.12 

異なるキャリア濃度を有するn型GaNに対する多光子励起 PECエッチングの調査

丹羽 ののか，川崎 晟也, 隈部 岳瑠, 渡邉 浩崇, 古澤 優太, 田中 敦之, 出来 真斗, 久志本 真希, 新田 州吾, 本田 善央, 天野 浩

第83回　応用物理学会　秋季学術講演会  2022.9.23 

深紫外レーザーダイオードの連続波発振 Invited

久志本 真希, 張 梓懿, 吉川 陽, 青戸 孝至, 本田 善央, ショーワルター レオ, 笹岡 千秋, 天野 浩

第83回　応用物理学会　秋季学術講演会  2022.9.22 

Toward AlGaN-based deep-ultraviolet LDs - Demonstration of the shortest wavelength LD and realization of CW operation Invited International conference

Maki Kushimoto

The 20th International Conference on Metal Organic Vapor Phase Epitaxy(ICMOVPE XX)  2022.7.14 

Approaches to low threshold current density in deep UV laser diodes on AlN substrate Invited International conference

M. Kushimoto, Z. Zhang, L. J. Schowalter, Y. Honda, C. Sasaoka, and H. Amano

Compound Semiconductor Week 2022(CSW2022)  2022.6.1 

High-efficiency AlGaN homojunction tunnel-junction deep-UV LEDs Invited International conference

Kengo Nagata, Taichi Matsubara, Satoshi Anada, Yoshiki Saito, Maki Kushimoto, Yoshio Honda, Tetsuya Takeuchi, Kazuo Yamamoto, Tsukasa Hirasama, and Hiroshi Amano

5th International Workshop on UV Materials and Devices(IWUMD 2022)  2022.5.26 

Reduction of Threshold Current Density in UV-C LDs Fabricated on AlN Substrates Invited International conference

Maki Kushimoto, Ziyi Zhang, Leo Schowalter, Yoshio Honda, Chiaki Sasaoka, Hiroshi Amano

2022 MRS Spring Meeting  2022.5.23 

Development of reflective electrodes for deep-ultraviolet LEDs using polycrystalline MgZnO structural films International conference

Maki Kushimoto, Taichi Matsubara, Kengo Nagata, Tatsuhiro Tanaka, Yoshio Honda, and Hiroshi Amano

9th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2022)  2022.4.22 

Potential distribution analysis of AlGaN homojunction tunnel-junction by electron holography International conference

Kengo Nagata, Satoshi Anada, Yoshiki Saito, Maki Kushimoto, Yoshio Honda, Tetsuya Takeuchi, Kazuo Yamamoto, Tsukasa Hirayama, and Hiroshi Amano

9th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2022)  2022.4.22 

Development of high efficiency AlGaN tunnel junction deep-UV LEDs Invited International conference

Kengo Nagata, Taichi Matsubara, Maki Kushimoto, Yoshiki Saito, Yoshio Honda, Tetsuya Takeuchi, and Hiroshi Amano

13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 14th International Conference on Plasma-Nano Technology & Sciense(ISPlasma2022 / IC-PLANTS2022)  2022.3.10 

MOVPE法を用いたGaN/AlN共鳴トンネルダイオードの作製

岩田大暉, 隈部岳瑠, 渡邉 浩崇, 久志本真希, 出来真斗, 新田州吾, 田中敦之, 本田善央, 天野浩

第69回応用物理学会春季学術講演会  2022.2.22 

多光子励起OBICを用いたGaN縦型p-nダイオード駆動中におけるキャリア濃度分布測定手法の提案

八木誠，川崎晟也，隈部岳瑠，安藤悠人，田中敦之，出来真斗，久志本真希，新田州吾，本田善央，天野浩

第69回応用物理学会春季学術講演会  2022.2.23 

Emission uniformity of UVC laser diodes on AlN substrates Invited International conference

Maki Kushimoto, Ziyi Zhang, Leo Schowalter, Yoshio Honda, Chiaki Sasaoka, Hiroshi Amano

SPIE Photonics West 2022   2022.2.21 

AlN基板上UV-C レーザーダイオード

久志本 真希、張 梓懿、本田 善央、レオ ショーワルター、笹岡 千秋、天野 浩

一般社団法人レーザー学会学術講演会第42回年次大会  2022.1.14 

UV-C LDs fabricated on AlN Substrates Invited International conference

Maki Kushimoto, Ziyi Zhang, Leo Schowalter, Yoshio Honda, Chiaki Sasaoka, Hiroshi Amano

The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity  2022.1.12 

最短波長UVC-LD の実現とその周辺技術 Invited

久志本 真希，張 梓懿，本田 善央，レオ ショーワルター，笹岡 千秋，天野 浩

一般社団法人ワイドギャップ半導体学会第4回研究会  2021.12.10 

Sputtered polycrystalline MgZnO as transparent electrode in AlGaN-based homojunction tunnel junction deep-ultraviolet light-emitting diode for significant emission enhancement International conference

Taichi Matsubara, Kengo Nagata, Maki Kushimoto1, Yoshio Honda, and Hiroshi Amano

International Conference on Materials and Systems for Sustainability 2021(ICMaSS2021)  2021.11.6 

Reduction of operating voltage of AlGaN homo junction tunnel junction deep UV light emitting diode by controlling impurity concentrations International conference

Kengo Nagata, Hiroaki Makino, Hiroshi Miwa, Shinichi Matsui, Shinya Boyama, Yoshiki Saito, Maki Kushimoto, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano

International Conference on Materials and Systems for Sustainability 2021(ICMaSS2021)  2021.11.6 

Reducing the Threshold Current Density of Deep UV LDs on AlN Substrate Invited International conference

Maki Kushimoto, Ziyi Zhang, Yoshio Honda, Leo Schowalter, Chiaki Sasaoka, Hiroshi Amano

The IEEE Photonics Conference (IPC 2021)  2021.10.20 

電子線ホログラフィーを用いたAlGaNホモ接合トンネルジャンクションの電位分布解析

永田 賢吾, 穴田 智史, 齋藤 義樹, 久志本 真希, 本田 善央, 竹内 哲也, 天野 浩, 山本 和生, 平山 司

第82回応用物理学会秋季学術講演会  2021.9.12 

深紫外LEDの発光出力向上に向けた多結晶スパッタリングMgZnO透明電極

松原 太一, 永田 賢吾, 久志本 真希, 本田 善央, 天野 浩

第82回応用物理学会秋季学術講演会  2021.9.12 

AlGaNホモ接合 トンネルジャンクション深紫外 LED の低電圧駆動 （2）

永田 賢吾, 三輪 浩士, 松井 慎一, 坊山 晋也, 齋藤 義樹, 久志本 真希, 本田 善央, 竹内 哲也, 天野 浩

第82回応用物理学会秋季学術講演会  2021.9.12 

Development of UV-C laser diode on AlN substrate using distributed polarization doped p-side cladding layer Invited International conference

Chiaki Sasaoka, Ziyi Zhang, Maki Kushimoto, Leo J. Schowalter, and Hiroshi Amano

Lester Eastman Conference on High Performance Devices ( LEC 2021)  2021.8.4 

Deep UV Laser Diode with Compositionally Graded AlGaN p-cladding Layer Invited International conference

Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano

CLEO 2021  2021.5.12 

UV-C laser diode with distributed polarization doped p-cladding layer Invited International coauthorship International conference

M. Kushimoto, Z. Zhang, T. Sakai, N. Sugiyama, Y. Honda, L. J. Schowalter, C. Sasaoka, and H. Amano

2021 MRS Spring Meeting  2021.4.18 

Development of polarization doped UVC LDs on AlN substrates Invited International coauthorship International conference

M. Kushimoto, Z. Zhang, T. Sakai, N. Sugiyama, Y. Honda, L. J. Schowalter, C. Sasaoka, and H. Amano

CSW-2021  2021.5.13 

AlGaNホモ接合トンネルジャンクション深紫外LEDの低電圧駆動

永田 賢吾, 牧野 浩明, 三輪 浩士, 松井 慎一, 坊山 晋也, 齋藤 義樹, 久志本 真希, 本田 善央, 竹内 哲也, 天野 浩

第68回応用物理学会春季学術講演会  2021.3.16 

高温スパッタリングにより成膜したMgZnO透明電極材料の電気的及び光学的特性

松原 太一 , 久志本 真希 , 渡邉 浩崇, 古澤 優太, 新田 州吾, 本田 善央, 天野 浩

第68回応用物理学会春季学術講演会  2021.3.18 

Development of UV-C laser diodes on AlN substrate Invited International conference

Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano

SPIE PHOTONICS WEST  2021.3.6 

Electrical and Optical Characteristics of Al-doped MgZnO Deposited by RF Magnetron Cosputtering International conference

Taichi Matsubara, Maki Kushimoto, Manato Deki, Yoshio Honda, and Hiroshi Amano

The 8th Asian Conference on Crystal Growth and Crystal Technology  2021.3.1 

Electrically injected AlGaN based deep-ultraviolet laser diodes Invited International conference

Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Leo Schowalter, Yoshio Honda, Chiaki Sasaoka, Hiroshi Amano

IPC 2020  2020.9.28 

GaN-on-GaN Vertical Nanowire Power Schottky Barrier Diode Fabricated by Top-down Approach International conference

Yaqiang Liao, Tao Chen, Jia Wang, Yuto Ando, Xu Yang, Hirotaka Watanabe, Jun Hirotani, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin J. Chen, and Hiroshi Amano

ISPSD 2020  2020.9.17 

Demonstration of a deep-ultraviolet laser diode on single crystal AlN substrate operating under current injection at room temperature Invited

Ziyi Zhang, Maki Kushimoto, Tadayoshi Sakai, Naoharu Sugiyama, Leo.J. Schowalter, Chiaki Sasaoka, Hiroshi Amano

第81回応用物理学会秋季学術講演会  2020.9.9 

AlGaN 系深紫外光デバイスの開発 -レーザーダイオードと透明導電膜 - Invited

久志本 真希, 出来 真斗, 本田 善央, 天野 浩

第81回応用物理学会秋季学術講演会  2020.9.10 

次世代深紫外光源に向けた透明導電膜と UV−C LD Invited

久志本 真希

第12回ナノ構造・エピタキシャル成長講演会  2020.7.31 

272 nm deep-ultraviolet laser diode fabricated on high-quality AlN substrate Invited International conference

C. Sasaoka, Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, and H. Amano

ALPS 2020  2020.4.22 

表面積制御によるマイクロプレート型多色発光LEDの同時成長

蔡　文トウ, 久志本 真希, 出来 真斗，田中 敦之，新田 州吾，本田 善央，天野 浩

第67回応用物理学会春季学術講演会 

ALD 法によりDBR を形成されたAlGaN UVC LD の室温パルス発振

酒井 忠慶, 久志本 真希, 張 梓懿, 杉山 直治, 本田 善央, 笹岡 千秋, 天野 浩

第67回応用物理学会春季学術講演会 

GaN 縦型p-n ダイオードにおける2 光子吸収光電流の測定

川崎晟也，安藤悠人，田中敦之，塚越真悠子，谷川智之，出来真斗，久志本真希，新田州吾，本田善央，天野浩

第67回応用物理学会春季学術講演会 

p-GaN エピ層中に Si イオン注入により形成した n-GaN の電気特性評価

三浦史也、安藤 悠人，高橋 昌大，出来 真斗, 田中 敦之，渡邉 浩崇，久志本 真希，新田 州吾，本田 善央，天野 浩

先進パワー半導体分科会第6回講演会 

ゲート電極形成プロセスがAl2O3/GaN界面およびチャネル特性に与える影響

安藤悠人、中村徹、出来真斗、田岡紀之、田中敦之、渡邉浩崇、久志本真希、新田州吾、本田善央、山田永、清水三聡、天野浩

先進パワー半導体分科会第6回講演会 

Crystal structure of MgZnO deposited by RF sputtering International conference

Maki Kushimoto, Tadayoshi Sakai, Manato Deki, Yoshio Honda, and Hiroshi Amano

The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019) 

Photoelectrochemical Etching for GaN MEMS

Takehiro Yamada, Yuto Ando, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Shugo Nitta, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

EMS-38 

Effect of interface state density on channel mobility in GaN lateral MISFET International conference

Yuto Ando, Tohru Nakamura, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hisashi Yamada, Mitsuaki Shimizu, and Hiroshi Amano

SemiconNano 2019 

GaN横型MISFETにおけるチャネル移動度に対する界面準位密度の影響2

安藤 悠人,中村 徹, 出来 真斗, 田岡 紀之1, 田中 敦之, 渡邉 浩崇 久志本 真希, 新田 州吾, 本田 善央, 山田 永, 清水 三聡, 天野 浩

応用物理学会秋季学術講演会 

GaNパワーデバイスの実用化に向けた準備状況について

田中敦之、安藤悠人、高橋昌大、三浦史也、川崎晟也、渡邉浩崇、久志本真希、出来真斗、新田州吾、本田善央、天野浩

応用物理学会秋季学術講演会 

エッチング法を用いたAlGaN UV-C レーザーの光共振器作製

酒井 忠慶, 久志本 真希, 本田 善央, 天野 浩

応用物理学会秋季学術講演会 

GaNへの高温Mg/Fイオン共注入によるグリーンルミネッセンスの抑制

高橋 昌大，田中 敦之，安藤 悠人，渡邉 浩崇，出来 真斗，久志本 真希，新田 州吾，本田 善央，Kevin J. Chen，天野 浩

応用物理学会秋季学術講演会 

Effects of annealing process on electrical conductivity of MgZnO International conference

Maki Kushimoto, Tadayoshi Sakai, Manato Deki, Yoshio Honda, and Hiroshi Amano

The international workshop on UV materials and devices (IWUMD-2019) 

High-Resolution Observation of In-Plane Carrier Concentration Nonuniformity in Vertical GaN p-n Diode Using Franz-Keldysh Effect and Avalanche Multiplication International conference

Seiya Kawasaki, Hayata Fukushima, Shigeyosihi Usami, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

2019 International Conference on Solid State Devices and Materials (SSDM2019) 

Effect of Post-metallization Annealing on Interface Properties of Al2O4/GaN Fabricated on c- and m-plane Free-standing GaN Substrates International conference

Yuto Ando, Tohru Nakamura, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

2019 International Conference on Solid State Devices and Materials (SSDM2019) 

Effect of Post-metallization Annealing on Interface Properties of Al2O3/GaN Fabricated on c- and m-plane Free-standing GaN Substrates International conference

Yuto Ando, Tohru Nakamura, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

2019 International Conference on Solid State Devices and Materials (SSDM2019) 

Interface properties of lateral MISFETs fabricated on m- and c-plane International conference

Yuto Ando, Tohru Nakamura, Manato Deki, Shigeyoshi Usami, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) 

Fabrication of GaN-on-GaN Vertical Nanowire Schottky Barrier Diode by Top-down Approach International conference

Yaqiang Liao, Jia Wang, Yuto Ando, Xu Yang, Jun Hirotani, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin J. Chen, and Hiroshi Amano

The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) 

Suppression of green luminescence by co-implantation of Mg/F ions into GaN at high temperature International conference

M. Takahashi, A. Tanaka, S. Usami, Y. Ando, H. Watanabe, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano

The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) 

GaN 基板上横型MIS FET における移動度の面方位依存性

安藤 悠人, 中村 徹, 出来 真斗, 渡邉 浩崇, 田中 敦之, 久志本 真希, 新田 州吾, 本田 善央, 天野 浩

第11回 ナノ構造・エピタキシャル成長講演会 

Two-dimensional h-BN multilayer grown on AlN by metalorganic vapor phase epitaxy International conference

Xu Yang, Shugo Nitta, Markus Pristovsek, Yuhuai Liu, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

The 4th International Conference on Physics of 2D Crystals (ICP2DC4) 

Mg composition control of co-sputtered MgZnO thin films toward the application of deep-UV transparent electrode International conference

Tadayoshi Sakai, Maki Kushimoto, Manato Deki, Yoshio Honda, and Hiroshi Amano

The 7th International Conference on Light-Emitting Devices and Their Industrial Applications 

RFスパッタ法を用いたMgZnOの熱処理効果

久志本真希，酒井 忠慶、出来 真斗、本田 善央、天野 浩

第66回　応用物理学会春季学術講演会 

飛行時間型質量分析法を用いたトリメチルアルミニウムとアンモニアの気相反応分析

大山　武浩、叶　正、久志本　真希、新田　州吾、本田　善央、天野　浩大山　武浩、叶　正、久志本　真希、新田　州吾、本田　善央、天野　浩

第66回　応用物理学会春季学術講演会 

深紫外透明電極応用に向けたMgZnO 薄膜の吸収端制御

酒井 忠慶, 久志本 真希, 出来 真斗, 本田 善央, 天野 浩

第66回　応用物理学会春季学術講演会 

Optical properties of AlGaN based UVC laser structures on annealed AlN template Invited International conference

Maki Kushimoto, Yang Xu, Yuhuai Liu, Yoshio Honda, and Hiroshi Amano

The international workshop on UV materials and devices (IWUMD-2018) 

RF スパッタ法を用いた紫外透過 MgZnO 透明導電膜の作製 Invited

久志本真希，酒井忠慶、古澤優太、出来真斗、本田善央、天野浩

日本学術振興会 ワイドギャップ半導体光・電子デバイス第162委員会　第110回研究会・特別公開シンポジウム 

深紫外透明電極応用に向けたMgZnO薄膜の組成制御

酒井忠慶、久志本真希、出来真斗、本田善央, 天野浩

日本学術振興会 ワイドギャップ半導体光・電子デバイス第162委員会　第110回研究会・特別公開シンポジウム 

GaN中転位の三次元観察と転位がパワーデバイスに与える影響 Invited

田中敦之, 宇佐美茂佳, 安藤悠人,　永松謙太郎, 久志本真希, 出来真斗, 新田州吾, 本田善央, 天野浩

第65回応用物理学会春季学術講演会 

GaN表面への酸化プロセスがALD-Al2O3/GaN界面の電気特性に与える影響 Invited

出来真斗、曾根和詩、永松謙太郎、田中敦之、久志本真希、新田州吾、本田善央、天野浩

第65回応用物理学会春季学術講演会 

Mesa depth dependence of breakdown voltage of GaN pn diode International conference

Hayata Fukushima, Yuto Ando, Shigeyoshi Usami, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

ISPlasma2018 

Comparison of In incorporation in axial InGaN quantum wells on GaN and InGaN nanorods grown by lasma assisted molecular beam epitaxy International conference

Tasuya Hattori,Maki Kushimoto,Shugo Nitta,Yoshio Honda,Hiroshi Amano

ISPlasma2018 

Development of Sustainable Smart Society by Transformative Electronics Invited International conference

M. Ogura, Y. Ando, S. Usami, K. Nagamatsu, M. Kushimoto, M. Deki, A. Tanaka, S. Nitta, Y. Honda, M. Pristovsek, H. Kawai, S. Yagi, H. Amano

2017 IEEE International Electron Devices Meeting (IEDM 2017) 

-c面GaN基板上のGaNのMOVPE成長における酸素低減の研究

河野　司, 久志本真希, 永松謙太郎, 新田州吾, 本田善央, 天野　浩

電子情報通信学会 電子デバイス研究会 

In situ and ex situ optical characterization of nitride semiconductor crystal for advanced optical and power electronic devices Invited International conference

S. Nitta, Z. Liu, S. Usami, Z. Ye, K. Nagamatsu, M. Kushimoto, M. Deki, A. Tanaka, Y. Honda, M. Pristovsek, and H. Amano

Optics 2017 / 8th International Conference and Exhibition on Lasers, Optics & Photonics 

Interface state density and dielectric breakdown electric fields of MOS capacitors using several off-cut m-plane GaN substrates

M. Deki, K. Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda and H. Amano

Comparison of In incorporation in axial InGaN quantum wells on GaN and InGaN nanorods grown by molecular beam epitaxy

T. Hattori, M. Kushimoto, S. Nitta, Y. Honda and H. Amano

"Correlation between dislocation and leakage current of p-n diodes on free-standing GaN substrate

S. Usami, Y. Ando, A. Tanaka, K. Nagamatsu, M. Kushimoto, M. Deki, S. Nitta, Y. Hond and H. Amano

m-plane GaN Schottky barrier diode fabricated with MOVPE layer on several off- angled m-plane GaN substrate

A.Tanaka, Y. Ando, O. Barry, K. Nagamatsu, M. Deki, M. Kushimoto, S. Nitta, Y. Honda and H. Amano

異なるGaN ⾃⽴基板上縦型PN ダイオードのキラー転位解析

宇佐美 茂佳、福島 颯太、安藤 悠⼈、⽥中 敦之、永松 謙太郎、久志本 真希、出来 真⽃、新⽥ 州吾、本⽥ 善央、天野 浩

⽇本学術振興会 ワイドギャップ半導体光・電⼦デバイス 第１６２委員会 100 回記念特別公開シンポジウム 

GaN パワーデバイスの周辺耐圧構造の検討

福島 颯太、安藤 悠⼈、宇佐美 茂佳、⽥中 敦之、永松 謙太郎、出来 真⽃、久志本 真希、新⽥ 州吾、本⽥ 善央、天野 浩

⽇本学術振興会 ワイドギャップ半導体光・電⼦デバイス 第１６２委員会 100 回記念特別公開シンポジウム 

オフ⽅向の異なるホモエピタキシャルm ⾯ショットキーバリアダイオードの作製

安藤 悠⼈、永松 謙太郎、⽥中 敦之、宇佐美 茂佳、出来 真⽃、Barry Ousmane、久志本 真希、新⽥ 州吾、本⽥ 善央、天野 浩

⽇本学術振興会 ワイドギャップ半導体光・電⼦デバイス 第１６２委員会 100 回記念特別公開シンポジウム 

Semipolar InGaN optical devices on patterned Si substrates Invited International conference

Maki Kushimoto, Takafumi Suzuki, Daiki Ito, Yoshio Honda and Hiroshi Amano

The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017) 

Evaluation of internal quantum efficiency of LED by photocurrent measurement Invited International conference

Shigeyoshi Usami, Kazunobu Kojima, Maki Kushimoto, Manato Deki, Shugo Nitta, Shigefusa Chichibu, Hiroshi Amano

The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017) 

Blue LEDs and Transformative Electronics for Establishing Sustainable Smart Society International conference

"S. Usami, Z. Ye, X. Yang, K. Nagamatsu, M. Kushimoto, M. Deki, A. Tanaka, S. Nitta, Y. Honda, M. Pristovsek, H. Amano

International Conference on Materials and Systems for Sustainability (ICMaSS2017)  

Crystal Plane Dependence of Interface States Density in c- and m-plane GaN MOS Capacitors International conference

M. Deki, K.Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano

International Conference on Materials and Systems for Sustainability (ICMaSS2017)  

Deep Levels in Homoepitaxial m-plane GaN Schottky Barrier Diodes International conference

"M. Deki, Y. Ando, K.Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano

10th International Workshop on Bulk Nitride Semiconductors 

転位密度の異なるGaN自立基板上PNダイオードのキラー転位解析

宇佐美 茂佳、福島 颯太、安藤 悠人、田中 敦之、永松 謙太郎、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

第78回応用物理学会　秋季学術講演会 

The effect of the environment temperature of the wafer on InGaN grown by metalorganic vapor phase epitaxy

Zhibin Liu、Shugo Nitta、Shigeyoshi Usami、Kentaro Nagamatsu、Maki Kushimoto、Manato Deki、Yoshio Honda、Hiroshi Amano

第78回応用物理学会　秋季学術講演会 

オフ角の異なるm 面GaN 基板上Si ドープ厚膜SBD

安藤 悠人、永松 謙太郎、田中 敦之、宇佐美 茂佳、バリー ウスマン1、出来 真斗、久志本 真希、新田 州吾、本田 善央、天野 浩

第78回応用物理学会　秋季学術講演会 

Development of Sustainable Smart Society via Transformative Electronics International conference

H. Amano, Y. Robin, S. Y. Bae, K. Nagamatsu, M. Kushimoto, M. Deki, T. Nishitani, D. Sato, A. Tanaka, S. Nitta, Y. Honda, M. Pristovsek

The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017) 

Crystal Plane Dependence of Interface States Density in c- and m-plane GaN MOS Capacitors International conference

Manato Deki, Kazushi Sone, Junya Matsushita, Kentarou Nagamatsu, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

ICNS-12 

Correlation between dislocations and leakage current of p-n diodes on free-standing GaN substrate International conference

Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

ICNS-12 

Reduction of Dislocation in GaN on Silicon Substrate Using In-situ Etching International conference

Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, Hiroshi Amano

ICNS-12 

m-plane GaN Schottky barrier diode fabricated with MOVPE layer on several off-angled GaN substrate International conference

Atsushi Tanaka, Ousmane 1 Barry, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

ICNS-12 

異なるInGaN膜厚の(1-101)GaN基板上太陽電池の作製

久志本真希、宇佐美茂佳、出来真斗、本田善央、天野浩

第9回ナノ構造・エピタキシャル成長講演会 

成長法の異なるGaN自立基板上PNダイオードのキラー転位解析

宇佐美茂佳,安藤悠人、福島颯太、田中敦之、永松謙太郎、出来真斗、久志本真希、新田州吾、本田善央、天野浩

第9回ナノ構造・エピタキシャル成長講演会 

m 面GaN 基板上 厚膜GaN-SBD の逆方向リーク電流

安藤悠人, 永松謙太郎, 田中敦之, 宇佐美茂佳, 出来真斗,　久志本真希, 新田州吾, 本田善央, 天野浩

第9回ナノ構造・エピタキシャル成長講演会 

Growth of III-Nitride Nanorods for Future Optoelectronics Applications International conference

Hiroshi Amano, Tatsuya Hattori, Yoann Robin, Kaddour Lekhal, Si-Young Bae, Maki Kushimoto, Yoshio Honda, Yasuhisa Ushida, Geoffrey Avit, Agnès Trassoudaine

18th International Conference on Light-Matter Coupling in Nanostructures (PLMCN18)  

GaN自立基板上PNダイオードの逆方向リークと転位の関係

宇佐美 茂佳, 安藤 悠人, 田中 敦之, 永松 謙太郎, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央, 天野 浩

第64回応用物理学会春季学術講演会 

O2プラズマ処理およびO3酸化処理を行ったAl2O3/GaN構造の界面準位密度評価

曾根 和詩、 松下 淳矢、 安藤 悠人、 永松 謙太郎、 田中 敦之、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

第64回応用物理学会春季学術講演会 

2次元正孔ガスを用いたコレクタトップ縦型GaNHBTの作製

安藤 悠人、 小倉 昌也、 松下 淳矢、 宇佐美 茂佳、 田中 敦之、 永松 謙太郎、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

第64回応用物理学会春季学術講演会 

Si基板上半極性(1-101)GaNストライプレーザー端面への反射膜作製

鈴木 崇文、 伊藤 大貴、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

第64回応用物理学会春季学術講演会 

絶対吸収率と光電流測定とを組み合わせた発光ダイオードの光励起キャリア濃度定量

宇佐美 茂佳、 小島 一信、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 秩父 重英、 天野 浩

第64回応用物理学会春季学術講演会 

窒化ホウ素を用いたGaN -MIS キャパシタの作製 と電気特性評価

松下 淳矢，永松 謙太郎 ，Xu Yang，田中 敦之，久志本 真希，出来 真斗，新田 州吾，本田 善央，天野 浩

先進パワー半導体分科会 第４回講演会 

二次元正孔ガスを用いたコレクタトップ縦型GaN-HBTの作製

安藤 悠人、小倉 昌也、松下 淳矢、宇佐美 茂佳、田中 敦之、永松 謙太郎、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

先進パワー半導体分科会 第４回講演会 

Facet Distribution of Leakage Current and Carrier Concentration in m-Plane GaN Schottky Barrier Diode Fabricated with MOVPE International conference

A. Tanaka, O. 1 Barry, K. Ngamatsu, J. Matsushita, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano

International Workshop on Nitride Semiconductors 2016(IWN2016) 

Semipolar lasers on structured Si-Subtrates Invited International conference

Maki Kushimoto

Heimbach workshop2016 

窒化ホウ素を用いたGaN -MIS キャパシタの作製 と電気特性評価

松下 淳矢，永松 謙太郎 ，Xu Yang，田中 敦之，久志本 真希，出来 真斗，新田 州吾，本田 善央，天野 浩

第77回応用物理学会秋季学術講演会 

InGaN成長中のInウェッティングレイヤーのレーザー散乱による観察

山本 哲也,永松 謙太郎,久志本真希,出来真斗,新田 州吾,本田 善央,天野 浩

第77回応用物理学会秋季学術講演会 

GaN 自立基板上PIN ダイオードにおける順方向発光パターン解析

宇佐美 茂佳, 安藤 悠人, 田中 敦之, 永松 謙太郎, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央, 天野 浩

第77回応用物理学会秋季学術講演会 

InGaN surface roughness recovery by hydrogen treatment as monitored by in situ laser scattering International conference

Tetsuya Yamamoto, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18) 

Si(001)基板上(1-101)高In 組成InGaN における積層欠陥の形成

久志本真希、本田善央、天野浩

第35 回電子材料シンポジウム 

Si基板上(1-101)高In組成InGaN結晶の緩和過程

久志本真希、本田善央、天野浩

第8回窒化物半導体結晶成長講演会 

Growth and characterization of semipolar (1-101)high-indium-content quantum wells on Si(001) International conference

Maki Kushimoto, Yoshio Honda, Hiroshi Amano

The 6th International Symposium on Growth of III-Nitrides 

Lasing Properties of (1-101) InGaN/GaN Stripe Cavity Structure on Patterned (001) Si Substrate International conference

Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

The 3th International Conference on Light-Emitting Devices and Their Industrial Applications 

Laser-based in situ monitoring of high In-content InGaN growth on GaN (0001) International conference

T.Mitsunari, T. Yamamoto, M. Kato, A. Tamura, S. Usami, M. Kushimoto, K. Yamashita, Y. Honda, Y. Lacroix, and H. Amano

10th International Symposium on Semiconductor Light Emitting Devices 

Optical gain spectra of (1-101) InGaN stripe cavity structures on a patterned (001) Si substrate International conference

Maki Kushimoto, Yoshio Honda, Hiroshi Amano

International Workshop on Nitride Semiconductors 2014(IWN2014) 

Growth of (1-101)InGaN stripes on patterned (001)Si substrate International conference

Yasukazu Sone, Maki Kushimoto, Yoshio Honda, Hiroshi Amano

The 15th IUMRS-International Congerence in Asia 

Growth optimization of green InGaN multi-quantum well International conference

"T.Mitsunari1, A. Tamura1, S. Usami1, M. Kushimoto1, K. Yamashita1, Y. Honda1, Y. Lacroix3, and H. Amano1,2

Conference on LED and Its Industrial Application '14 

Light Emission Polarization Properties of (1-101) InGaN/GaN MQWs with Cavity Structure on Patterned Si Substrate International conference

M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

10th International Conference on Nitride Semiconductors(ICNS-10) 

Optical properties of semipolar (1-101) InGaN/GaN multiple quantum well with cavity structure on patterned Si substrae International conference

M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics, and Nanostructures(EDISON18) 

Optical polarization properties in semipolar (1-101) InGaN/GaN multiple quantum well on a patterned Si Substrate International conference

M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

International Workshop on Nitride Semiconductors 2012(IWN2012) 

Fabrication of InGaN/GaN multiple quantum wells on (1-101) GaN International conference

T. Tanikawa, T. Sano, M. Kushimoto, Y. Honda, M. Yamaguchi, and H. Amano

International Workshop on Nitride Semiconductors 2012(IWN2012) 

Reduction of dislocations and residual stress in GaN grown on patterned Si substrate International conference

T. Tanikawa, T. Mitsunari, M. Kushimoto, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

11th Akasaki Research Center Symposium 

AlN基板上UV-C LDのプロセス起因劣化 Invited

笹岡千秋、久志本真希、張梓懿、天野浩

日本学術振興会「結晶加工と評価技術」第145 委員会　第172 回研究会  2021.10.1 

単結晶AlN基板上AlGaNを用いた270nm帯CW半導体レーザー Invited

久志本 真希

光電相互変換第125委員会 5月26日研究会  2023.5.26 

世界最短波長深紫外半導体レーザー Invited

久志本 真希

TRiSTAR第１期奥村フェロー主催研究セミナー  2023.5.12 

第3回 光材料・応用技術研究会 Invited

久志本 真希

第3回 光材料・応用技術研究会   2023.11.10 

Automobile Engineering Laboratory I

2022

Automobile Engineering Laboratory I

2021

電気電子情報工学実験第１

2021

電気電子情報工学実験第２

2021

Automobile Engineering Laboratory I

2020

電気電子情報工学実験第１

2020

電気電子情報工学実験第２

2020

Automobile Engineering Laboratory I

2019

線形回路論及び演習

2019

電気電子情報工学実験第１

2019

線形回路論及び演習

2018

電気電子情報工学実験第１

2018

Automobile Engineering Laboratory I

2018

電気電子情報工学実験第１

2017

線形回路論及び演習

2017

物理学実験

2017

Automobile Engineering Laboratory I

2017