Updated on 2022/03/29

写真a

 
KUSHIMOTO Maki
 
Organization
Graduate School of Engineering Electronics 2 Lecturer
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Electrical Engineering, Electronics, and Information Engineering
Title
Lecturer

Degree 1

  1. 博士(工学) ( 2016.3   名古屋大学 ) 

Research Areas 1

  1. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

Current Research Project and SDGs 1

  1. 深紫外発光素子

Committee Memberships 10

  1. 公益社団法人 応用物理学会   機関誌企画・編集委員会  

    2022.4 - 2022.3   

  2. 一般社団法人ワイドギャップ半導体学会   企画委員  

    2021.10   

  3.   Symposium Program Committee  

    2021.10   

  4. SSDM2019実行委員会   実行委員  

    2018.8 - 2019.12   

  5. ISPLASMA 2019 実行委員会   実行委員  

    2018.4 - 2019.3   

  6. 第10回 ナノ構造・エピタキシャル成長講演会   現地担当幹事  

    2018.1 - 2018.12   

  7. ISPLASMA 2018 実行委員会   実行委員  

    2017.9 - 2018.3   

  8. IWUMD2017 実行委員会   IWUMD 実行委員  

    2017.2 - 2018.3   

  9. 応用物理学会東海支部   幹事  

    2017   

  10. IWN2018プログラム委員会   IWN2018 プログラム委員(庶務委員)  

    2016.10 - 2019.3   

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Awards 7

  1. 第42回(2020年度)応用物理学会論文賞

    2020.9   公益社団法人 応用物理学会  

    張梓懿、久志本真希、酒井忠慶、杉山直治、Leo J. Schowalter、笹岡千秋、天野浩

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    Award type:Honored in official journal of a scientific society, scientific journal  Country:Japan

  2. 令和元年度赤﨑賞

    2020.7   国立大学法人東海国立大学機構   極微小深紫外半導体レーザーダイオードの実現

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    Country:Japan

  3. 平成29年度ナノ構造・エピタキシャル成長分科会 研究奨励賞

    2017.7   ナノ構造・エピタキシャル成長分科会   Optically pumped lasing properties of ð1101Þ InGaN/GaN stripe multiquantum wells

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  4. 第37回(2014年秋季)応用物理学会「講演奨励賞」

    2015.3   公益社団法人 応用物理学会   (001)Si基板上半極性面InGaN光共振器の 誘導放出特性

    久志本真希

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  5. 電子情報通信学会東海支部学生研究奨励賞(博士)

    2014.6   一般社団法人電子情報通信学会東海支部  

    久志本真希

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  6. 日本結晶成長学会ナノエピ分科会 発表奨励賞

    2013.6   日本結晶成長学会ナノエピ分科会   加工Si基板上(1-101)InGaN/GaN MQWストライプ結晶の光学特性

    久志本真希

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  7. 電子情報通信学会電子デバイス研究会 論文発表奨励賞

    2012.6   電子情報通信学会エレクトロニクスソサイエティ電子デバイス研究専門委員会   Si基板上半極性面(1-101)GaNストライプ上InGaN/GaN多重量子井戸構造の偏光特性

    久志本真希

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

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Papers 47

  1. Visualization of depletion layer in AlGaN homojunction p-n junction Reviewed

      Vol. 15 ( 3 )   2022.3

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  2. Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate Invited Reviewed

      Vol. 61 ( 1 )   2022.1

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    Authorship:Lead author   Language:English  

    DOI: 10.35848/1347-4065/ac3a1d

    Web of Science

  3. Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers Reviewed

      Vol. 14 ( 8 )   2021.8

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  4. Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations Reviewed

      Vol. 14 ( 8 )   2021.8

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  5. Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate Reviewed

      Vol. 14 ( 5 )   2021.5

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    Authorship:Lead author   Language:English  

    DOI: 10.35848/1882-0786/abf443

    Web of Science

    Other Link: http://hdl.handle.net/2237/0002001600

  6. Development of UV-C laser diodes on AlN substrate Invited

    Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano

    Proc. SPIE   Vol. 11686   page: 116860P   2021.3

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    Authorship:Lead author   Language:English  

  7. Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations Invited International coauthorship

    F. Piva, C. De Santi, M. Buffolo, M. Deki, M. Kushimoto, H. Amano, H. Tomozawa, N. Shibata, G. Meneghesso, E. Zanoni, M. Meneghini

    Proc. SPIE   Vol. 11686   page: 116860   2021.3

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    Language:English  

  8. Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation Reviewed International coauthorship

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    PHOTONICS RESEARCH   Vol. 8 ( 11 ) page: 1786-1791   2020.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/PRJ.401785

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  9. AlN 基板上 AlGaN ヘテロ構造 UVC レーザーダイオード Invited Reviewed

    久志本 真希

    日本結晶成長学会誌   Vol. 47 ( 3 ) page: 47-3-03   2020.10

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    Authorship:Lead author   Language:Japanese   Publisher:日本結晶成長学会誌  

  10. Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes Reviewed

    Zhang Ziyi, Kushimoto Maki, Horita Masahiro, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 15 )   2020.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0027789

    Web of Science

  11. Design and characterization of a low-optical-loss UV-C laser diode Reviewed

    Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 9 ) page: .   2020.9

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    Language:English   Publishing type:Research paper (scientific journal)  

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  12. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes Reviewed International coauthorship International journal

    Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page: 349 - 352   2020.8

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    Web of Science

  13. Impact of high-temperature implantation of Mg ions into GaN Reviewed

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 5 ) page: .   2020.5

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  14. Experimental observation of high intrinsic thermal conductivity of AlN Reviewed

    Cheng Zhe, Koh Yee Rui, Mamun Abdullah, Shi Jingjing, Bai Tingyu, Huynh Kenny, Yates Luke, Liu Zeyu, Li Ruiyang, Lee Eungkyu, Liao Michael E., Wang Yekan, Yu Hsuan Ming, Kushimoto Maki, Luo Tengfei, Goorsky Mark S., Hopkins Patrick E., Amano Hiroshi, Khan Asif, Graham Samuel

    PHYSICAL REVIEW MATERIALS   Vol. 4 ( 4 )   2020.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevMaterials.4.044602

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  15. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

    Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J., Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 116 ( 12 )   2020.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5145017

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  16. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    GALLIUM NITRIDE MATERIALS AND DEVICES XV   Vol. 11280   2020.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1117/12.2544704

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  17. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

    Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE     2020.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201900955

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  18. Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    2D MATERIALS   Vol. 7 ( 1 )   2020.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/2053-1583/ab46e6

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  19. Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS     2019.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201900554

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  20. A 271.8 nm deep-ultraviolet laser diode for room temperature operation

    Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 12 )   2019.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/ab50e0

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  21. Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    MICROELECTRONICS RELIABILITY   Vol. 100   2019.9

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.microrel.2019.113418

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  22. V-shaped dislocations in a GaN epitaxial layer on GaN substrate

    Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

    AIP ADVANCES   Vol. 9 ( 9 )   2019.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5114866

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  23. Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Torigoe Kazuhisa, Kushimoto Maki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 7 )   2019.7

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    DOI: 10.7567/1347-4065/ab2657

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  24. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

    Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 516   page: 63-66   2019.6

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    DOI: 10.1016/j.jcrysgro.2019.03.025

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  25. Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab106c

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  26. Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

    Evropeitsev Evgeniy A., Robin Yoann, Shubina Tatiana V., Bae Si-Young, Nitta Shugo, Kirilenko Demid A., Davydov Valery Y., Smirnov Alexandr N., Toropov Alexey A., Kushimoto Maki, Ivanov Sergey V., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 256 ( 6 )   2019.6

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    DOI: 10.1002/pssb.201800648

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  27. Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 514   page: 13-13   2019.5

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    DOI: 10.1016/j.jcrysgro.2019.02.058

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  28. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

    Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 509   page: 50-53   2019.3

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    DOI: 10.1016/j.jcrysgro.2018.12.007

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  29. Morphological study of InGaN on GaN substrate by supersaturation

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 508   page: 58-65   2019.2

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    DOI: 10.1016/j.jcrysgro.2018.12.028

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  30. Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

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    DOI: 10.7567/1882-0786/aafdb9

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  31. Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core- shell nanorods

    Robin Y., Evropeitsev E. A., Shubina T. V., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Eliseyev I. A., Bae S. Y., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

    NANOSCALE   Vol. 11 ( 1 ) page: 193-199   2019.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/c8nr05863f

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  32. Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Murakami Satoshi, Kushimoto Maki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 9 )   2018.9

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    DOI: 10.7567/JJAP.57.091001

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  33. Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

    Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

    SCIENTIFIC REPORTS   Vol. 8   2018.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-018-25473-x

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  34. m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates

    Tanaka Atsushi, Ando Yuto, Nagamatsu Kentaro, Deki Manato, Cheong Heajeong, Ousmane Barry, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 215 ( 9 )   2018.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201700645

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  35. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 5 )   2018.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.11.051002

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  36. Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Yamamoto Tetsuya, Usami Shigeyoshi, Kushimoto Maki, Murakami Satoshi, Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 255 ( 5 )   2018.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201700387

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  37. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Sugawara Yoshihiro, Yao Yong-Zhao, Ishikawa Yukari

    APPLIED PHYSICS LETTERS   Vol. 112 ( 18 )   2018.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5024704

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  38. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

    Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201600837

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  39. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

    Tanaka Atsushi, Barry Ousmane, Nagamatsu Kentaro, Matsushita Junya, Deki Manato, Ando Yuto, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201600829

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  40. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer

    Lee Ho-Jun, Bae Si-Young, Lekhal Kaddour, Tamura Akira, Suzuki Takafumi, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 547-551   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.11.116

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  41. Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer

    Bae S. -Y., Lekhal K., Lee H. -J., Mitsunari T., Min J. -W., Lee D. -S., Kushimoto M., Honda Y., Amano H.

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 110-113   2017.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2016.10.032

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  42. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes Reviewed

    Shigeyoshi Usami, Ryosuke Miyagoshi, Atsushi Tanaka, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    physica status solidi (a)     page: 0   2017

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    DOI: 0

  43. Development of Sustainable Smart Society based on Transformative Electronics

    Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     page: .   2017

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  44. Growth of semipolar (1-101) high-indium-content InGaN quantum wells Reviewed

    Maki Kushimoto, Yoshio Honda, Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 55 ( 5S ) page: 05FA10   2016.4

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.55.05FA10

  45. Study of radiation detection properties of GaN pn diode Reviewed

    Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano

    Japanese Journal of Applied Physics   Vol. 55 ( 6S ) page: 05FJ02   2016.3

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    DOI: 10.7567/JJAP.55.05FJ02

  46. Optically pumped lasing properties of (1-101) InGaN/GaN stripe multi quantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed

    Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

    Applied Physics Express   Vol. 8 ( 2 ) page: 22702   2015.1

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.8.022702

  47. Fabrication of InGaN/GaN multiple quantum wells on (1-101) GaN Reviewed

    T. Tanikawa, T. Sano, M. Kushimoto, Y. Honda, M. Yamaguchi, and H. Amano

    Japanese Journal of Applied Physics   Vol. 52 ( 8 ) page: 08JB05   2013.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.52.08JC05

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Presentations 113

  1. Development of high efficiency AlGaN tunnel junction deep-UV LEDs Invited International conference

    Kengo Nagata, Taichi Matsubara, Maki Kushimoto, Yoshiki Saito, Yoshio Honda, Tetsuya Takeuchi, and Hiroshi Amano

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 14th International Conference on Plasma-Nano Technology & Sciense(ISPlasma2022 / IC-PLANTS2022)  2022.3.10 

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    Event date: 2022.3

    Language:English   Presentation type:Oral presentation (invited, special)  

  2. MOVPE法を用いたGaN/AlN共鳴トンネルダイオードの作製

    岩田大暉, 隈部岳瑠, 渡邉 浩崇, 久志本真希, 出来真斗, 新田州吾, 田中敦之, 本田善央, 天野浩

    第69回応用物理学会春季学術講演会  2022.2.22 

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    Event date: 2022.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学/オンライン  

  3. 多光子励起OBICを用いたGaN縦型p-nダイオード駆動中におけるキャリア濃度分布測定手法の提案

    八木誠,川崎晟也,隈部岳瑠,安藤悠人,田中敦之,出来真斗,久志本真希,新田州吾,本田善央,天野浩

    第69回応用物理学会春季学術講演会  2022.2.23 

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    Event date: 2022.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学/オンライン  

  4. Emission uniformity of UVC laser diodes on AlN substrates Invited International conference

    Maki Kushimoto, Ziyi Zhang, Leo Schowalter, Yoshio Honda, Chiaki Sasaoka, Hiroshi Amano

    SPIE Photonics West 2022   2022.2.21 

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    Event date: 2022.1

    Language:English   Presentation type:Oral presentation (invited, special)  

  5. AlN基板上UV-C レーザーダイオード

    久志本 真希、張 梓懿、本田 善央、レオ ショーワルター、笹岡 千秋、天野 浩

    一般社団法人レーザー学会学術講演会第42回年次大会  2022.1.14 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン開催  

  6. UV-C LDs fabricated on AlN Substrates Invited International conference

    Maki Kushimoto, Ziyi Zhang, Leo Schowalter, Yoshio Honda, Chiaki Sasaoka, Hiroshi Amano

    The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity  2022.1.12 

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    Event date: 2022.1

    Language:English   Presentation type:Oral presentation (invited, special)  

  7. 最短波長UVC-LD の実現とその周辺技術 Invited

    久志本 真希,張 梓懿,本田 善央,レオ ショーワルター,笹岡 千秋,天野 浩

    一般社団法人ワイドギャップ半導体学会第4回研究会  2021.12.10 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン開催  

  8. Sputtered polycrystalline MgZnO as transparent electrode in AlGaN-based homojunction tunnel junction deep-ultraviolet light-emitting diode for significant emission enhancement International conference

    Taichi Matsubara, Kengo Nagata, Maki Kushimoto1, Yoshio Honda, and Hiroshi Amano

    International Conference on Materials and Systems for Sustainability 2021(ICMaSS2021)  2021.11.6 

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    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

  9. Reduction of operating voltage of AlGaN homo junction tunnel junction deep UV light emitting diode by controlling impurity concentrations International conference

    Kengo Nagata, Hiroaki Makino, Hiroshi Miwa, Shinichi Matsui, Shinya Boyama, Yoshiki Saito, Maki Kushimoto, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano

    International Conference on Materials and Systems for Sustainability 2021(ICMaSS2021)  2021.11.6 

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    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

  10. Reducing the Threshold Current Density of Deep UV LDs on AlN Substrate Invited International conference

    Maki Kushimoto, Ziyi Zhang, Yoshio Honda, Leo Schowalter, Chiaki Sasaoka, Hiroshi Amano

    The IEEE Photonics Conference (IPC 2021)  2021.10.20 

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  11. 電子線ホログラフィーを用いたAlGaNホモ接合トンネルジャンクションの電位分布解析

    永田 賢吾, 穴田 智史, 齋藤 義樹, 久志本 真希, 本田 善央, 竹内 哲也, 天野 浩, 山本 和生, 平山 司

    第82回応用物理学会秋季学術講演会  2021.9.12 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン開催  

  12. 深紫外LEDの発光出力向上に向けた多結晶スパッタリングMgZnO透明電極

    松原 太一, 永田 賢吾, 久志本 真希, 本田 善央, 天野 浩

    第82回応用物理学会秋季学術講演会  2021.9.12 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン開催  

  13. AlGaNホモ接合 トンネルジャンクション深紫外 LED の低電圧駆動 (2)

    永田 賢吾, 三輪 浩士, 松井 慎一, 坊山 晋也, 齋藤 義樹, 久志本 真希, 本田 善央, 竹内 哲也, 天野 浩

    第82回応用物理学会秋季学術講演会  2021.9.12 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン開催  

  14. Development of UV-C laser diode on AlN substrate using distributed polarization doped p-side cladding layer Invited International conference

    Chiaki Sasaoka, Ziyi Zhang, Maki Kushimoto, Leo J. Schowalter, and Hiroshi Amano

    Lester Eastman Conference on High Performance Devices ( LEC 2021)  2021.8.4 

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    Event date: 2021.8

    Language:English   Presentation type:Oral presentation (invited, special)  

  15. Deep UV Laser Diode with Compositionally Graded AlGaN p-cladding Layer Invited International conference

    Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano

    CLEO 2021  2021.5.12 

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    Event date: 2021.5

    Language:English   Presentation type:Oral presentation (invited, special)  

  16. UV-C laser diode with distributed polarization doped p-cladding layer Invited International coauthorship International conference

    M. Kushimoto, Z. Zhang, T. Sakai, N. Sugiyama, Y. Honda, L. J. Schowalter, C. Sasaoka, and H. Amano

    2021 MRS Spring Meeting  2021.4.18 

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    Event date: 2021.4

    Language:English   Presentation type:Oral presentation (invited, special)  

  17. Development of polarization doped UVC LDs on AlN substrates Invited International coauthorship International conference

    M. Kushimoto, Z. Zhang, T. Sakai, N. Sugiyama, Y. Honda, L. J. Schowalter, C. Sasaoka, and H. Amano

    CSW-2021  2021.5.13 

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    Event date: 2021.4

    Language:English   Presentation type:Oral presentation (invited, special)  

  18. AlGaNホモ接合トンネルジャンクション深紫外LEDの低電圧駆動

    永田 賢吾, 牧野 浩明, 三輪 浩士, 松井 慎一, 坊山 晋也, 齋藤 義樹, 久志本 真希, 本田 善央, 竹内 哲也, 天野 浩

    第68回応用物理学会春季学術講演会  2021.3.16 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン開催   Country:Japan  

  19. 高温スパッタリングにより成膜したMgZnO透明電極材料の電気的及び光学的特性

    松原 太一 , 久志本 真希 , 渡邉 浩崇, 古澤 優太, 新田 州吾, 本田 善央, 天野 浩

    第68回応用物理学会春季学術講演会  2021.3.18 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン開催   Country:Japan  

  20. Development of UV-C laser diodes on AlN substrate Invited International conference

    Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano

    SPIE PHOTONICS WEST  2021.3.6 

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    Event date: 2021.3

    Language:English   Presentation type:Oral presentation (invited, special)  

  21. Electrical and Optical Characteristics of Al-doped MgZnO Deposited by RF Magnetron Cosputtering International conference

    Taichi Matsubara, Maki Kushimoto, Manato Deki, Yoshio Honda, and Hiroshi Amano

    The 8th Asian Conference on Crystal Growth and Crystal Technology  2021.3.1 

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    Event date: 2021.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  22. Electrically injected AlGaN based deep-ultraviolet laser diodes Invited International conference

    Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Leo Schowalter, Yoshio Honda, Chiaki Sasaoka, Hiroshi Amano

    IPC 2020  2020.9.28 

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    Event date: 2020.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Canada  

  23. GaN-on-GaN Vertical Nanowire Power Schottky Barrier Diode Fabricated by Top-down Approach International conference

    Yaqiang Liao, Tao Chen, Jia Wang, Yuto Ando, Xu Yang, Hirotaka Watanabe, Jun Hirotani, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin J. Chen, and Hiroshi Amano

    ISPSD 2020  2020.9.17 

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    Event date: 2020.9

    Language:English   Presentation type:Poster presentation  

    Country:Austria  

  24. Demonstration of a deep-ultraviolet laser diode on single crystal AlN substrate operating under current injection at room temperature Invited

    Ziyi Zhang, Maki Kushimoto, Tadayoshi Sakai, Naoharu Sugiyama, Leo.J. Schowalter, Chiaki Sasaoka, Hiroshi Amano

    第81回応用物理学会秋季学術講演会  2020.9.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン開催   Country:Japan  

  25. AlGaN 系深紫外光デバイスの開発 -レーザーダイオードと透明導電膜 - Invited

    久志本 真希, 出来 真斗, 本田 善央, 天野 浩

    第81回応用物理学会秋季学術講演会  2020.9.10 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン開催   Country:Japan  

  26. 次世代深紫外光源に向けた透明導電膜と UV−C LD Invited

    久志本 真希

    第12回ナノ構造・エピタキシャル成長講演会  2020.7.31 

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    Event date: 2020.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン開催   Country:Japan  

  27. 272 nm deep-ultraviolet laser diode fabricated on high-quality AlN substrate Invited International conference

    C. Sasaoka, Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, and H. Amano

    ALPS 2020  2020.4.22 

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    Event date: 2020.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  28. 表面積制御によるマイクロプレート型多色発光LEDの同時成長

    蔡 文トウ, 久志本 真希, 出来 真斗,田中 敦之,新田 州吾,本田 善央,天野 浩

    第67回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学四谷キャンパス   Country:Japan  

  29. ALD 法によりDBR を形成されたAlGaN UVC LD の室温パルス発振

    酒井 忠慶, 久志本 真希, 張 梓懿, 杉山 直治, 本田 善央, 笹岡 千秋, 天野 浩

    第67回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学四谷キャンパス   Country:Japan  

  30. GaN 縦型p-n ダイオードにおける2 光子吸収光電流の測定

    川崎晟也,安藤悠人,田中敦之,塚越真悠子,谷川智之,出来真斗,久志本真希,新田州吾,本田善央,天野浩

    第67回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学四谷キャンパス   Country:Japan  

  31. p-GaN エピ層中に Si イオン注入により形成した n-GaN の電気特性評価

    三浦史也、安藤 悠人,高橋 昌大,出来 真斗, 田中 敦之,渡邉 浩崇,久志本 真希,新田 州吾,本田 善央,天野 浩

    先進パワー半導体分科会第6回講演会 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:広島国際会議場   Country:Japan  

  32. ゲート電極形成プロセスがAl2O3/GaN界面およびチャネル特性に与える影響

    安藤悠人、中村徹、出来真斗、田岡紀之、田中敦之、渡邉浩崇、久志本真希、新田州吾、本田善央、山田永、清水三聡、天野浩

    先進パワー半導体分科会第6回講演会 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:広島国際会議場   Country:Japan  

  33. Crystal structure of MgZnO deposited by RF sputtering International conference

    Maki Kushimoto, Tadayoshi Sakai, Manato Deki, Yoshio Honda, and Hiroshi Amano

    The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019) 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Venue:Okinawa, Japan   Country:Japan  

  34. Photoelectrochemical Etching for GaN MEMS

    Takehiro Yamada, Yuto Ando, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Shugo Nitta, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

    EMS-38 

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    Event date: 2019.10

    Language:Japanese   Presentation type:Poster presentation  

    Venue:THE KASHIHARA(奈良県橿原市)   Country:Japan  

  35. Effect of interface state density on channel mobility in GaN lateral MISFET International conference

    Yuto Ando, Tohru Nakamura, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hisashi Yamada, Mitsuaki Shimizu, and Hiroshi Amano

    SemiconNano 2019 

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    Event date: 2019.9

    Language:English   Presentation type:Poster presentation  

    Venue:Kobe, Japan   Country:Japan  

  36. GaN横型MISFETにおけるチャネル移動度に対する界面準位密度の影響2

    安藤 悠人,中村 徹, 出来 真斗, 田岡 紀之1, 田中 敦之, 渡邉 浩崇 久志本 真希, 新田 州吾, 本田 善央, 山田 永, 清水 三聡, 天野 浩

    応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  37. GaNパワーデバイスの実用化に向けた準備状況について

    田中敦之、安藤悠人、高橋昌大、三浦史也、川崎晟也、渡邉浩崇、久志本真希、出来真斗、新田州吾、本田善央、天野浩

    応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:北海道大学   Country:Japan  

  38. エッチング法を用いたAlGaN UV-C レーザーの光共振器作製

    酒井 忠慶, 久志本 真希, 本田 善央, 天野 浩

    応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  39. GaNへの高温Mg/Fイオン共注入によるグリーンルミネッセンスの抑制

    高橋 昌大,田中 敦之,安藤 悠人,渡邉 浩崇,出来 真斗,久志本 真希,新田 州吾,本田 善央,Kevin J. Chen,天野 浩

    応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  40. Effects of annealing process on electrical conductivity of MgZnO International conference

    Maki Kushimoto, Tadayoshi Sakai, Manato Deki, Yoshio Honda, and Hiroshi Amano

    The international workshop on UV materials and devices (IWUMD-2019) 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:St. Petersburg, Russia  

  41. High-Resolution Observation of In-Plane Carrier Concentration Nonuniformity in Vertical GaN p-n Diode Using Franz-Keldysh Effect and Avalanche Multiplication International conference

    Seiya Kawasaki, Hayata Fukushima, Shigeyosihi Usami, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    2019 International Conference on Solid State Devices and Materials (SSDM2019) 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya, Japan   Country:Japan  

  42. Effect of Post-metallization Annealing on Interface Properties of Al2O4/GaN Fabricated on c- and m-plane Free-standing GaN Substrates International conference

    Yuto Ando, Tohru Nakamura, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    2019 International Conference on Solid State Devices and Materials (SSDM2019) 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya, Japan   Country:Japan  

  43. Effect of Post-metallization Annealing on Interface Properties of Al2O3/GaN Fabricated on c- and m-plane Free-standing GaN Substrates International conference

    Yuto Ando, Tohru Nakamura, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    2019 International Conference on Solid State Devices and Materials (SSDM2019) 

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    Event date: 2019.9

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya, Japan   Country:Japan  

  44. Interface properties of lateral MISFETs fabricated on m- and c-plane International conference

    Yuto Ando, Tohru Nakamura, Manato Deki, Shigeyoshi Usami, Atsushi Tanaka, Hirotaka Watanabe, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Washington DC, USA   Country:United States  

  45. Fabrication of GaN-on-GaN Vertical Nanowire Schottky Barrier Diode by Top-down Approach International conference

    Yaqiang Liao, Jia Wang, Yuto Ando, Xu Yang, Jun Hirotani, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Kevin J. Chen, and Hiroshi Amano

    The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Washington DC, USA   Country:United States  

  46. Suppression of green luminescence by co-implantation of Mg/F ions into GaN at high temperature International conference

    M. Takahashi, A. Tanaka, S. Usami, Y. Ando, H. Watanabe, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano

    The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Washington DC, USA   Country:United States  

  47. GaN 基板上横型MIS FET における移動度の面方位依存性

    安藤 悠人, 中村 徹, 出来 真斗, 渡邉 浩崇, 田中 敦之, 久志本 真希, 新田 州吾, 本田 善央, 天野 浩

    第11回 ナノ構造・エピタキシャル成長講演会 

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    Event date: 2019.6

    Language:Japanese   Presentation type:Poster presentation  

    Venue:広島大学  東広島キャンパス 学士会館レセプションホール   Country:Japan  

  48. Two-dimensional h-BN multilayer grown on AlN by metalorganic vapor phase epitaxy International conference

    Xu Yang, Shugo Nitta, Markus Pristovsek, Yuhuai Liu, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

    The 4th International Conference on Physics of 2D Crystals (ICP2DC4) 

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    Event date: 2019.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hangzhou, China   Country:China  

  49. Mg composition control of co-sputtered MgZnO thin films toward the application of deep-UV transparent electrode International conference

    Tadayoshi Sakai, Maki Kushimoto, Manato Deki, Yoshio Honda, and Hiroshi Amano

    The 7th International Conference on Light-Emitting Devices and Their Industrial Applications 

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    Event date: 2019.4

    Language:English   Presentation type:Poster presentation  

    Venue:Yokohama, Japan   Country:Japan  

  50. RFスパッタ法を用いたMgZnOの熱処理効果

    久志本真希,酒井 忠慶、出来 真斗、本田 善央、天野 浩

    第66回 応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学大岡山キャンパス   Country:Japan  

  51. 飛行時間型質量分析法を用いたトリメチルアルミニウムとアンモニアの気相反応分析

    大山 武浩、叶 正、久志本 真希、新田 州吾、本田 善央、天野 浩大山 武浩、叶 正、久志本 真希、新田 州吾、本田 善央、天野 浩

    第66回 応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学大岡山キャンパス   Country:Japan  

  52. 深紫外透明電極応用に向けたMgZnO 薄膜の吸収端制御

    酒井 忠慶, 久志本 真希, 出来 真斗, 本田 善央, 天野 浩

    第66回 応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学大岡山キャンパス   Country:Japan  

  53. Optical properties of AlGaN based UVC laser structures on annealed AlN template Invited International conference

    Maki Kushimoto, Yang Xu, Yuhuai Liu, Yoshio Honda, and Hiroshi Amano

    The international workshop on UV materials and devices (IWUMD-2018) 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kunming City, Yunnan, China   Country:Japan  

  54. RF スパッタ法を用いた紫外透過 MgZnO 透明導電膜の作製 Invited

    久志本真希,酒井忠慶、古澤優太、出来真斗、本田善央、天野浩

    日本学術振興会 ワイドギャップ半導体光・電子デバイス第162委員会 第110回研究会・特別公開シンポジウム 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京大学   Country:Japan  

  55. 深紫外透明電極応用に向けたMgZnO薄膜の組成制御

    酒井忠慶、久志本真希、出来真斗、本田善央, 天野浩

    日本学術振興会 ワイドギャップ半導体光・電子デバイス第162委員会 第110回研究会・特別公開シンポジウム 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京大学   Country:Japan  

  56. GaN中転位の三次元観察と転位がパワーデバイスに与える影響 Invited

    田中敦之, 宇佐美茂佳, 安藤悠人, 永松謙太郎, 久志本真希, 出来真斗, 新田州吾, 本田善央, 天野浩

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:早稲田大学, 東京   Country:Japan  

  57. GaN表面への酸化プロセスがALD-Al2O3/GaN界面の電気特性に与える影響 Invited

    出来真斗、曾根和詩、永松謙太郎、田中敦之、久志本真希、新田州吾、本田善央、天野浩

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学, 東京   Country:Japan  

  58. Mesa depth dependence of breakdown voltage of GaN pn diode International conference

    Hayata Fukushima, Yuto Ando, Shigeyoshi Usami, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    ISPlasma2018 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya, Japan   Country:Japan  

  59. Comparison of In incorporation in axial InGaN quantum wells on GaN and InGaN nanorods grown by lasma assisted molecular beam epitaxy International conference

    Tasuya Hattori,Maki Kushimoto,Shugo Nitta,Yoshio Honda,Hiroshi Amano

    ISPlasma2018 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya, Japan   Country:Japan  

  60. Development of Sustainable Smart Society by Transformative Electronics Invited International conference

    M. Ogura, Y. Ando, S. Usami, K. Nagamatsu, M. Kushimoto, M. Deki, A. Tanaka, S. Nitta, Y. Honda, M. Pristovsek, H. Kawai, S. Yagi, H. Amano

    2017 IEEE International Electron Devices Meeting (IEDM 2017) 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue: Las Vegas, Nevada, USA   Country:United States  

  61. -c面GaN基板上のGaNのMOVPE成長における酸素低減の研究

    河野 司, 久志本真希, 永松謙太郎, 新田州吾, 本田善央, 天野 浩

    電子情報通信学会 電子デバイス研究会 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋工業大学   Country:Japan  

  62. In situ and ex situ optical characterization of nitride semiconductor crystal for advanced optical and power electronic devices Invited International conference

    S. Nitta, Z. Liu, S. Usami, Z. Ye, K. Nagamatsu, M. Kushimoto, M. Deki, A. Tanaka, Y. Honda, M. Pristovsek, and H. Amano

    Optics 2017 / 8th International Conference and Exhibition on Lasers, Optics & Photonics 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue: Las Vegas, Nevada, USA   Country:United States  

  63. Interface state density and dielectric breakdown electric fields of MOS capacitors using several off-cut m-plane GaN substrates

    M. Deki, K. Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda and H. Amano

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  64. Comparison of In incorporation in axial InGaN quantum wells on GaN and InGaN nanorods grown by molecular beam epitaxy

    T. Hattori, M. Kushimoto, S. Nitta, Y. Honda and H. Amano

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  65. "Correlation between dislocation and leakage current of p-n diodes on free-standing GaN substrate

    S. Usami, Y. Ando, A. Tanaka, K. Nagamatsu, M. Kushimoto, M. Deki, S. Nitta, Y. Hond and H. Amano

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  66. m-plane GaN Schottky barrier diode fabricated with MOVPE layer on several off- angled m-plane GaN substrate

    A.Tanaka, Y. Ando, O. Barry, K. Nagamatsu, M. Deki, M. Kushimoto, S. Nitta, Y. Honda and H. Amano

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  67. 異なるGaN ⾃⽴基板上縦型PN ダイオードのキラー転位解析

    宇佐美 茂佳、福島 颯太、安藤 悠⼈、⽥中 敦之、永松 謙太郎、久志本 真希、出来 真⽃、新⽥ 州吾、本⽥ 善央、天野 浩

    ⽇本学術振興会 ワイドギャップ半導体光・電⼦デバイス 第162委員会 100 回記念特別公開シンポジウム 

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    Event date: 2017.10

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ロワジールホテル豊橋   Country:Japan  

  68. GaN パワーデバイスの周辺耐圧構造の検討

    福島 颯太、安藤 悠⼈、宇佐美 茂佳、⽥中 敦之、永松 謙太郎、出来 真⽃、久志本 真希、新⽥ 州吾、本⽥ 善央、天野 浩

    ⽇本学術振興会 ワイドギャップ半導体光・電⼦デバイス 第162委員会 100 回記念特別公開シンポジウム 

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    Event date: 2017.10

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ロワジールホテル豊橋   Country:Japan  

  69. オフ⽅向の異なるホモエピタキシャルm ⾯ショットキーバリアダイオードの作製

    安藤 悠⼈、永松 謙太郎、⽥中 敦之、宇佐美 茂佳、出来 真⽃、Barry Ousmane、久志本 真希、新⽥ 州吾、本⽥ 善央、天野 浩

    ⽇本学術振興会 ワイドギャップ半導体光・電⼦デバイス 第162委員会 100 回記念特別公開シンポジウム 

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    Event date: 2017.10

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ロワジールホテル豊橋   Country:Japan  

  70. Semipolar InGaN optical devices on patterned Si substrates Invited International conference

    Maki Kushimoto, Takafumi Suzuki, Daiki Ito, Yoshio Honda and Hiroshi Amano

    The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017) 

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    Event date: 2017.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Banff, Alberta, Canada   Country:Canada  

  71. Evaluation of internal quantum efficiency of LED by photocurrent measurement Invited International conference

    Shigeyoshi Usami, Kazunobu Kojima, Maki Kushimoto, Manato Deki, Shugo Nitta, Shigefusa Chichibu, Hiroshi Amano

    The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017) 

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    Event date: 2017.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Banff, Alberta, Canada   Country:Canada  

  72. Blue LEDs and Transformative Electronics for Establishing Sustainable Smart Society International conference

    "S. Usami, Z. Ye, X. Yang, K. Nagamatsu, M. Kushimoto, M. Deki, A. Tanaka, S. Nitta, Y. Honda, M. Pristovsek, H. Amano

    International Conference on Materials and Systems for Sustainability (ICMaSS2017)  

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kyoto, Japan   Country:Japan  

  73. Crystal Plane Dependence of Interface States Density in c- and m-plane GaN MOS Capacitors International conference

    M. Deki, K.Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano

    International Conference on Materials and Systems for Sustainability (ICMaSS2017)  

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya, Japan   Country:Japan  

  74. Deep Levels in Homoepitaxial m-plane GaN Schottky Barrier Diodes International conference

    "M. Deki, Y. Ando, K.Nagamatsu, A. Tanaka, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano

    10th International Workshop on Bulk Nitride Semiconductors 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Finland  

  75. 転位密度の異なるGaN自立基板上PNダイオードのキラー転位解析

    宇佐美 茂佳、福島 颯太、安藤 悠人、田中 敦之、永松 謙太郎、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

    第78回応用物理学会 秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  76. The effect of the environment temperature of the wafer on InGaN grown by metalorganic vapor phase epitaxy

    Zhibin Liu、Shugo Nitta、Shigeyoshi Usami、Kentaro Nagamatsu、Maki Kushimoto、Manato Deki、Yoshio Honda、Hiroshi Amano

    第78回応用物理学会 秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  77. オフ角の異なるm 面GaN 基板上Si ドープ厚膜SBD

    安藤 悠人、永松 謙太郎、田中 敦之、宇佐美 茂佳、バリー ウスマン1、出来 真斗、久志本 真希、新田 州吾、本田 善央、天野 浩

    第78回応用物理学会 秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  78. Development of Sustainable Smart Society via Transformative Electronics International conference

    H. Amano, Y. Robin, S. Y. Bae, K. Nagamatsu, M. Kushimoto, M. Deki, T. Nishitani, D. Sato, A. Tanaka, S. Nitta, Y. Honda, M. Pristovsek

    The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017) 

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    Event date: 2017.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kyoto, Japan   Country:Japan  

  79. Crystal Plane Dependence of Interface States Density in c- and m-plane GaN MOS Capacitors International conference

    Manato Deki, Kazushi Sone, Junya Matsushita, Kentarou Nagamatsu, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    ICNS-12 

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    Event date: 2017.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Strasburg,France   Country:France  

  80. Correlation between dislocations and leakage current of p-n diodes on free-standing GaN substrate International conference

    Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    ICNS-12 

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    Event date: 2017.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Strasburg,France   Country:France  

  81. Reduction of Dislocation in GaN on Silicon Substrate Using In-situ Etching International conference

    Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, Hiroshi Amano

    ICNS-12 

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    Event date: 2017.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Strasburg,France   Country:France  

  82. m-plane GaN Schottky barrier diode fabricated with MOVPE layer on several off-angled GaN substrate International conference

    Atsushi Tanaka, Ousmane 1 Barry, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    ICNS-12 

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    Event date: 2017.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Strasburg,France   Country:France  

  83. 異なるInGaN膜厚の(1-101)GaN基板上太陽電池の作製

    久志本真希、宇佐美茂佳、出来真斗、本田善央、天野浩

    第9回ナノ構造・エピタキシャル成長講演会 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:北海道大学   Country:Japan  

  84. 成長法の異なるGaN自立基板上PNダイオードのキラー転位解析

    宇佐美茂佳,安藤悠人、福島颯太、田中敦之、永松謙太郎、出来真斗、久志本真希、新田州吾、本田善央、天野浩

    第9回ナノ構造・エピタキシャル成長講演会 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:北海道大学   Country:Japan  

  85. m 面GaN 基板上 厚膜GaN-SBD の逆方向リーク電流

    安藤悠人, 永松謙太郎, 田中敦之, 宇佐美茂佳, 出来真斗, 久志本真希, 新田州吾, 本田善央, 天野浩

    第9回ナノ構造・エピタキシャル成長講演会 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:北海道大学   Country:Japan  

  86. Growth of III-Nitride Nanorods for Future Optoelectronics Applications International conference

    Hiroshi Amano, Tatsuya Hattori, Yoann Robin, Kaddour Lekhal, Si-Young Bae, Maki Kushimoto, Yoshio Honda, Yasuhisa Ushida, Geoffrey Avit, Agnès Trassoudaine

    18th International Conference on Light-Matter Coupling in Nanostructures (PLMCN18)  

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    Event date: 2017.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Germany  

  87. GaN自立基板上PNダイオードの逆方向リークと転位の関係

    宇佐美 茂佳, 安藤 悠人, 田中 敦之, 永松 謙太郎, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央, 天野 浩

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜(神奈川県横浜市)   Country:Japan  

  88. O2プラズマ処理およびO3酸化処理を行ったAl2O3/GaN構造の界面準位密度評価

    曾根 和詩、 松下 淳矢、 安藤 悠人、 永松 謙太郎、 田中 敦之、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜(神奈川県横浜市)   Country:Japan  

  89. 2次元正孔ガスを用いたコレクタトップ縦型GaNHBTの作製

    安藤 悠人、 小倉 昌也、 松下 淳矢、 宇佐美 茂佳、 田中 敦之、 永松 謙太郎、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜(神奈川県横浜市)   Country:Japan  

  90. Si基板上半極性(1-101)GaNストライプレーザー端面への反射膜作製

    鈴木 崇文、 伊藤 大貴、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:パシフィコ横浜(神奈川県横浜市)   Country:Japan  

  91. 絶対吸収率と光電流測定とを組み合わせた発光ダイオードの光励起キャリア濃度定量

    宇佐美 茂佳、 小島 一信、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 秩父 重英、 天野 浩

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜(神奈川県横浜市)   Country:Japan  

  92. 窒化ホウ素を用いたGaN -MIS キャパシタの作製 と電気特性評価

    松下 淳矢,永松 謙太郎 ,Xu Yang,田中 敦之,久志本 真希,出来 真斗,新田 州吾,本田 善央,天野 浩

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:つくば国際会議場(茨城県つくば市)   Country:Japan  

  93. 二次元正孔ガスを用いたコレクタトップ縦型GaN-HBTの作製

    安藤 悠人、小倉 昌也、松下 淳矢、宇佐美 茂佳、田中 敦之、永松 謙太郎、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:つくば国際会議場(茨城県つくば市)   Country:Japan  

  94. Facet Distribution of Leakage Current and Carrier Concentration in m-Plane GaN Schottky Barrier Diode Fabricated with MOVPE International conference

    A. Tanaka, O. 1 Barry, K. Ngamatsu, J. Matsushita, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, and H. Amano

    International Workshop on Nitride Semiconductors 2016(IWN2016) 

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    Event date: 2016.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  95. Semipolar lasers on structured Si-Subtrates Invited International conference

    Maki Kushimoto

    Heimbach workshop2016 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Germany  

  96. 窒化ホウ素を用いたGaN -MIS キャパシタの作製 と電気特性評価

    松下 淳矢,永松 謙太郎 ,Xu Yang,田中 敦之,久志本 真希,出来 真斗,新田 州吾,本田 善央,天野 浩

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ(新潟県新潟市)   Country:Japan  

  97. InGaN成長中のInウェッティングレイヤーのレーザー散乱による観察

    山本 哲也,永松 謙太郎,久志本真希,出来真斗,新田 州吾,本田 善央,天野 浩

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:朱鷺メッセ(新潟県新潟市)   Country:Japan  

  98. GaN 自立基板上PIN ダイオードにおける順方向発光パターン解析

    宇佐美 茂佳, 安藤 悠人, 田中 敦之, 永松 謙太郎, 久志本 真希, 出来 真斗, 新田 州吾, 本田 善央, 天野 浩

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ(新潟県新潟市)   Country:Japan  

  99. InGaN surface roughness recovery by hydrogen treatment as monitored by in situ laser scattering International conference

    Tetsuya Yamamoto, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18) 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya,Japan   Country:Japan  

  100. Si(001)基板上(1-101)高In 組成InGaN における積層欠陥の形成

    久志本真希、本田善央、天野浩

    第35 回電子材料シンポジウム 

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    Event date: 2016.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ラフォーレ琵琶湖   Country:Japan  

  101. Si基板上(1-101)高In組成InGaN結晶の緩和過程

    久志本真希、本田善央、天野浩

    第8回窒化物半導体結晶成長講演会 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都大学   Country:Japan  

  102. Growth and characterization of semipolar (1-101)high-indium-content quantum wells on Si(001) International conference

    Maki Kushimoto, Yoshio Honda, Hiroshi Amano

    The 6th International Symposium on Growth of III-Nitrides 

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    Event date: 2015.11

    Language:English   Presentation type:Poster presentation  

    Venue:Hamamatsu, Japan   Country:Japan  

  103. Lasing Properties of (1-101) InGaN/GaN Stripe Cavity Structure on Patterned (001) Si Substrate International conference

    Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

    The 3th International Conference on Light-Emitting Devices and Their Industrial Applications 

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    Event date: 2015.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama,Japan   Country:Japan  

  104. Laser-based in situ monitoring of high In-content InGaN growth on GaN (0001) International conference

    T.Mitsunari, T. Yamamoto, M. Kato, A. Tamura, S. Usami, M. Kushimoto, K. Yamashita, Y. Honda, Y. Lacroix, and H. Amano

    10th International Symposium on Semiconductor Light Emitting Devices 

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kaohsiung,Taiwan   Country:Japan  

  105. Optical gain spectra of (1-101) InGaN stripe cavity structures on a patterned (001) Si substrate International conference

    Maki Kushimoto, Yoshio Honda, Hiroshi Amano

    International Workshop on Nitride Semiconductors 2014(IWN2014) 

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    Event date: 2014.8

    Language:English   Presentation type:Poster presentation  

    Venue:Wroclaw, Poland   Country:Poland  

  106. Growth of (1-101)InGaN stripes on patterned (001)Si substrate International conference

    Yasukazu Sone, Maki Kushimoto, Yoshio Honda, Hiroshi Amano

    The 15th IUMRS-International Congerence in Asia 

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    Event date: 2014.8

    Language:English   Presentation type:Poster presentation  

    Venue:Fukuoka,Japan   Country:Japan  

  107. Growth optimization of green InGaN multi-quantum well International conference

    "T.Mitsunari1, A. Tamura1, S. Usami1, M. Kushimoto1, K. Yamashita1, Y. Honda1, Y. Lacroix3, and H. Amano1,2

    Conference on LED and Its Industrial Application '14 

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    Event date: 2014.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama,Japan   Country:Japan  

  108. Light Emission Polarization Properties of (1-101) InGaN/GaN MQWs with Cavity Structure on Patterned Si Substrate International conference

    M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

    10th International Conference on Nitride Semiconductors(ICNS-10) 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Washington DC, USA   Country:United States  

  109. Optical properties of semipolar (1-101) InGaN/GaN multiple quantum well with cavity structure on patterned Si substrae International conference

    M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

    The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics, and Nanostructures(EDISON18) 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Matsue, Japan   Country:Japan  

  110. Optical polarization properties in semipolar (1-101) InGaN/GaN multiple quantum well on a patterned Si Substrate International conference

    M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

    International Workshop on Nitride Semiconductors 2012(IWN2012) 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo, Japan   Country:Japan  

  111. Fabrication of InGaN/GaN multiple quantum wells on (1-101) GaN International conference

    T. Tanikawa, T. Sano, M. Kushimoto, Y. Honda, M. Yamaguchi, and H. Amano

    International Workshop on Nitride Semiconductors 2012(IWN2012) 

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    Event date: 2012.10

    Language:English   Presentation type:Poster presentation  

    Venue:Sapporo, Japan   Country:Japan  

  112. Reduction of dislocations and residual stress in GaN grown on patterned Si substrate International conference

    T. Tanikawa, T. Mitsunari, M. Kushimoto, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    11th Akasaki Research Center Symposium 

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    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  113. AlN基板上UV-C LDのプロセス起因劣化 Invited

    笹岡千秋、久志本真希、張梓懿、天野浩

    日本学術振興会「結晶加工と評価技術」第145 委員会 第172 回研究会  2021.10.1 

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    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン開催  

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KAKENHI (Grants-in-Aid for Scientific Research) 3

  1. Output power improvement of microchip deep-ultraviolet laser diodes for innovative manufacturing systems

    Grant number:21H04560  2021.4 - 2026.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

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    Authorship:Principal investigator 

    Grant amount:\41730000 ( Direct Cost: \32100000 、 Indirect Cost:\9630000 )

  2. Fabrication of long-wavelength light-emitting devices using semipolar InGaN

    Grant number:17K17800  2017.4 - 2020.3

    Kushimoto Maki

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    Authorship:Principal investigator 

    Grant amount:\4420000 ( Direct Cost: \3400000 、 Indirect Cost:\1020000 )

    In this study, we have investigated the improvement of the luminescence efficiency of yellow and red light-emitting devices by using semipolar GaN crystals grown on Si substrates.
    The (1-101) InGaN crystals used in this study can be grown at higher temperatures due to their higher In uptake efficiency than that of the conventional (0001) InGaN crystals. In addition, (1-101)InGaN has a different relaxation mechanism than (0001)InGaN, which suppresses the defects that occur when the In content increases. By inserting an InGaN layer under the active layer, it was shown that the emission wavelength could be easily controlled by controlling the relaxation rate of the InGaN layer depending on the InGaN layer thickness rather than on the growth conditions such as TMI supply and temperature. These results indicate that the crystal quality is improved and the emission efficiency is increased.

  3. 半極性面窒化物半導体を用いた発光デバイスに関する研究

    2014.4 - 2016.3

    科学研究費補助金 

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    Authorship:Principal investigator 

 

Teaching Experience (On-campus) 13

  1. Automobile Engineering Laboratory I

    2020

  2. 電気電子情報工学実験第1

    2020

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    受動回路

  3. 電気電子情報工学実験第2

    2020

  4. Automobile Engineering Laboratory I

    2019

  5. 線形回路論及び演習

    2019

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    演習担当

  6. 電気電子情報工学実験第1

    2019

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    R2 受動回路

  7. 電気電子情報工学実験第1

    2018

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    R2 受動回路

  8. 線形回路論及び演習

    2018

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    演習担当

  9. Automobile Engineering Laboratory I

    2018

  10. 線形回路論及び演習

    2017

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    演習担当

  11. 物理学実験

    2017

  12. 電気電子情報工学実験第1

    2017

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    R1 電気計器及び測定値の取り扱い

  13. Automobile Engineering Laboratory I

    2017

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Social Contribution 1

  1. リフレッシュ理科教室

    Role(s):Organizing member

    応用物理学会東海支部  2017.4

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    Audience: Schoolchildren

    Type:Seminar, workshop