Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Designated associate professor
Title
Designated associate professor
NITTA Shugo
Degree 1
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Ph.D. （ 2003.3 Meijo University ）
Research Interests 1
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Nitride semiconductors
Research History 4
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TOYODA GOSEI Co., Ltd.
2008.1 - 2015.9
Country：Japan
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エルシード株式会社
2006.4 - 2008.1
Country：Japan
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名城大学研究員
2005.12 - 2006.3
Country：Japan
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日本イー・エム・シー株式会社
2003.4 - 2005.11
Country：Japan
Education 3
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Meijo University Graduate School, Division of Science and Engineering
2000.4 - 2003.3
Country： Japan
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Meijo University Graduate School, Division of Science and Engineering
1998.4 - 2000.3
Country： Japan
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Meijo University Faculty of Science and Engineering
1994.4 - 1998.3
Country： Japan
Professional Memberships 2
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the Japanese Association for Crystal Growth
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The Japan Society of Applied Physics
Papers 53
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Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching
Kumabe Takeru, Ando Yuto, Watanabe Hirotaka, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( SB ) 2021.5
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Experimental demonstration of GaN IMPATT diode at X-band
Kawasaki Seiya, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Arai Manabu, Amano Hiroshi
APPLIED PHYSICS EXPRESS Vol. 14 ( 4 ) 2021.4
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Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE
Kangawa Yoshihiro, Kusaba Akira, Kempisty Pawel, Shiraishi Kenji, Nitta Shugo, Amano Hiroshi
CRYSTAL GROWTH & DESIGN Vol. 21 ( 3 ) page： 1878 - 1890 2021.3
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Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching
Yamada Takehiro, Ando Yuto, Watanabe Hirotaka, Furusawa Yuta, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Suda Jun, Amano Hiroshi
APPLIED PHYSICS EXPRESS Vol. 14 ( 3 ) 2021.3
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Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer
Liu T., Watanabe H., Nitta S., Wang J., Yu G., Ando Y., Honda Y., Amano H., Tanaka A., Koide Y.
APPLIED PHYSICS LETTERS Vol. 118 ( 7 ) 2021.2
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Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)
Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi
OPTICAL MATERIALS EXPRESS Vol. 11 ( 2 ) page： 524 - 524 2021.2
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Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces
Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi
APPLIED PHYSICS LETTERS Vol. 117 ( 24 ) 2020.12
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State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods
Evropeitsev Evgenii A., Kazanov Dmitrii R., Robin Yoann, Smirnov Alexander N., Eliseyev Ilya A., Davydov Valery Yu., Toropov Alexey A., Nitta Shugo, Shubina Tatiana V., Amano Hiroshi
SCIENTIFIC REPORTS Vol. 10 ( 1 ) 2020.11
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Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate
Yang Xu, Pristovsek Markus, Nitta Shugo, Liu Yuhuai, Honda Yoshio, Koide Yasuo, Kawarada Hiroshi, Amano Hiroshi
ACS APPLIED MATERIALS & INTERFACES Vol. 12 ( 41 ) page： 46466 - 46475 2020.10
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Optical properties of neodymium ions in nanoscale regions of gallium nitride
Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi
OPTICAL MATERIALS EXPRESS Vol. 10 ( 10 ) page： 2614 - 2623 2020.10
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Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures
Sato Shin-ichiro, Deki Manato, Nishimura Tomoaki, Okada Hiroshi, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Ohshima Takeshi
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS Vol. 479 page： 7 - 12 2020.9
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Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces
Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi
APPLIED PHYSICS LETTERS Vol. 117 ( 10 ) 2020.9
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Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO
Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 8 ) 2020.8
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Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures
Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi
APPLIED PHYSICS EXPRESS Vol. 13 ( 7 ) 2020.7
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Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO
Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi
APPLIED PHYSICS EXPRESS Vol. 13 ( 6 ) 2020.6
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Lattice bow in thick, homoepitaxial GaN layers for vertical power devices
Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 539 2020.6
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Impact of high-temperature implantation of Mg ions into GaN
Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 5 ) 2020.5
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Vertical GaN-on-GaN Schottky Diodes as alpha-Particle Radiation Sensors
Sandupatla Abhinay, Arulkumaran Subramaniam, Ing Ng Geok, Nitta Shugo, Kennedy John, Amano Hiroshi
MICROMACHINES Vol. 11 ( 5 ) 2020.5
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Tungsten carbide layers deposited on graphite substrates via a wet powder process as anti-parasitic-reaction coatings for reactor components in GaN growth
Nakamura Daisuke, Kimura Taishi, Itoh Kenji, Fujimoto Naoki, Nitta Shugo, Amano Hiroshi
CRYSTENGCOMM Vol. 22 ( 15 ) page： 2632 - 2641 2020.4
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Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature
Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 ( 4 ) 2020.4
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Analysis of trimethylgallium decomposition by high-resolution mass spectrometry
Ye Zheng, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 2 ) 2020.2
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Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer
Abhinay S., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 ( 1 ) 2020.1
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Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism
Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi
2D MATERIALS Vol. 7 ( 1 ) 2020.1
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Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes
Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi
PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) page： 349 - 352 2020
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Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy alpha-particle detection
Sandupatia A., Arulkurnaran S., Ranjan K., Ng G. I, Murumu P. P., Kennedy J., Deki M., Nitta S., Honda Y., Amano H.
2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020) 2020
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Low Voltage High-Energy alpha-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency
Sandupatla Abhinay, Arulkumaran Subramaniam, Ranjan Kumud, Ng Geok Ing, Murmu Peter P., Kennedy John, Nitta Shugo, Honda Yoshio, Deki Manato, Amano Hiroshi
SENSORS Vol. 19 ( 23 ) 2019.12
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V-shaped dislocations in a GaN epitaxial layer on GaN substrate
Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi
AIP ADVANCES Vol. 9 ( 9 ) 2019.9
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Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
Sarzynski Marcin, Grzanka Ewa, Grzanka Szymon, Targowski Grzegorz, Czernecki Robert, Reszka Anna, Holy Vaclav, Nitta Shugo, Liu Zhibin, Amano Hiroshi, Leszczynski Mike
MATERIALS Vol. 12 ( 16 ) 2019.8
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Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth
Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 516 page： 63 - 66 2019.6
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Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current
Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi
APPLIED PHYSICS LETTERS Vol. 114 ( 23 ) 2019.6
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Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth
Liu Qiang, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6
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Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability
Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6
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Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates
Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6
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Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults
Evropeitsev Evgeniy A., Robin Yoann, Shubina Tatiana V., Bae Si-Young, Nitta Shugo, Kirilenko Demid A., Davydov Valery Y., Smirnov Alexandr N., Toropov Alexey A., Kushimoto Maki, Ivanov Sergey V., Amano Hiroshi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 256 ( 6 ) 2019.6
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Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)
Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 514 page： 13 - 13 2019.5
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Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 512 page： 78 - 83 2019.4
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GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates
Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.
AIP ADVANCES Vol. 9 ( 4 ) 2019.4
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Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 509 page： 50 - 53 2019.3
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Morphological study of InGaN on GaN substrate by supersaturation
Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 508 page： 58 - 65 2019.2
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Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown
Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi
APPLIED PHYSICS EXPRESS Vol. 12 ( 2 ) 2019.2
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Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core- shell nanorods
Robin Y., Evropeitsev E. A., Shubina T. V., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Eliseyev I. A., Bae S. Y., Kushimoto M., Nitta S., Ivanov S. V., Amano H.
NANOSCALE Vol. 11 ( 1 ) page： 193 - 199 2019.1
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Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy
Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 10 ) 2018.10
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Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.
SCIENTIFIC REPORTS Vol. 8 2018.5
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m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates
Tanaka Atsushi, Ando Yuto, Nagamatsu Kentaro, Deki Manato, Cheong Heajeong, Ousmane Barry, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 215 ( 9 ) 2018.5
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Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy
Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi
APPLIED PHYSICS EXPRESS Vol. 11 ( 5 ) 2018.5
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Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Sugawara Yoshihiro, Yao Yong-Zhao, Ishikawa Yukari
APPLIED PHYSICS LETTERS Vol. 112 ( 18 ) 2018.4
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Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
Yang Xu, Nitta Shugo, Nagamatsu Kentaro, Bae Si-Young, Lee Ho-Jun, Liu Yuhuai, Pristovsek Markus, Honda Yoshio, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 482 page： 1 - 8 2018.1
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Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system
Nagamatsu Kentaro, Nitta Shugo, Ye Zheng, Nagao Hirofumi, Miki Shinichi, Honda Yoshio, Amano Hiroshi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 254 ( 8 ) 2017.8
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Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes
Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 214 ( 8 ) 2017.8
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Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE
Tanaka Atsushi, Barry Ousmane, Nagamatsu Kentaro, Matsushita Junya, Deki Manato, Ando Yuto, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 214 ( 8 ) 2017.8
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A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer
Sun Zheng, Song Peifeng, Nitta Shugo, Honda Yoshio, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 866 - 869 2017.6
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Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10(1)over-bar0) GaN homoepitaxial layers
Barry Ousmane I., Tanaka Atsushi, Nagamatsu Kentaro, Bae Si-Young, Lekhal Kaddour, Matsushita Junya, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 552 - 556 2017.6
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Development of Sustainable Smart Society based on Transformative Electronics
Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.
2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2017
KAKENHI (Grants-in-Aid for Scientific Research) 1
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An realistic improvement of reactor design to enhance ammonia decomposition rate for high quality high In content InGaN MOVPE growth
Grant number：16K06260 2016.4 - 2019.3
Nitta Shugo
Authorship：Principal investigator
Grant amount：\4680000 （ Direct Cost: \3600000 、 Indirect Cost：\1080000 ）
We investigated NH3 decomposition rate in high In content InGaN growth in a MOVPE reactor. One of the main reason of quality degradation of high In content InGaN is the low NH3 decomposition/reaction ratio in the reactor especially at lower growth temperature around 700 degree Celsius. We introduced large air gap between a wafer and a wafer tray, which leads wafer tray temperature increasing with keeping the same wafer surface temperature. The high wafer tray temperature causes higher gas phase temperature in the upper flow, then NH3 reaction rate is more enhanced at the surface. In the other word actual V/III ration is enhanced. The PL intensity of InGaN/GaN MQWs was significantly improved at longer wavelength such as 550 nm. The FWHM of PL spectra are decreased and surface morphology was also obviously improved. This method is useful to improve structural and optical properties of high In content InGaN.