Updated on 2022/03/03

写真a

 
KUROSAWA Masashi
 
Organization
Graduate School of Engineering Materials Physics 1 Lecturer
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Physical Science and Engineering
Title
Lecturer
Contact information
メールアドレス
Profile
研究室:http://alice.xtal.nagoya-u.ac.jp/nanoeledev/index.html
若手ユニット:https://nu2dmaterial.mystrikingly.com
東海若手チャプター:https://jsap-tokai-yrc.mystrikingly.com
External link

Degree 4

  1. 博士(工学) ( 2012.3   九州大学 ) 

  2. 修士(工学) ( 2009.3   九州大学 ) 

  3. 学士(工学) ( 2007.3   九州大学 ) 

  4. 準学士(工学) ( 2005.3   茨城工業高等専門学校 ) 

Research Areas 2

  1. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  2. Nanotechnology/Materials / Crystal engineering

Current Research Project and SDGs 2

  1. 14族(Si,Ge,Sn,C)半導体薄膜の結晶成長、新機能探索およびデバイス応用

  2. 14族元素からなる新奇二次元物質の結晶成長・物性評価・理論計算

Research History 11

  1. Lecturer, Department of Materials Physics, Graduate School of Engineering, Nagoya University

    2017.4

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    Country:Japan

  2. Nagoya University   Institute for Advanced Research   Lecturer

    2017.1 - 2020.3

  3. Lecturer, Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University

    2017.1 - 2017.3

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    Country:Japan

  4. Research Director, PRESTO, JST

    2015.12 - 2019.3

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    Country:Japan

  5. Designated Lecturer, Division of Materials Research, Institute of Materials and Systems for Sustainability, Nagoya University

    2015.10 - 2016.12

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    Country:Japan

  6. Nagoya University   Institute for Advanced Research   Designated Lecturer

    2015.5 - 2016.12

  7. Designated Lecturer, EcoTopia Science Institute Division of Green Conversion, Nagoya University

    2015.5 - 2015.9

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    Country:Japan

  8. Research Institution Researcher, EcoTopia Science Institute Division of Green Conversion, Nagoya University

    2015.4

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    Country:Japan

  9. Nagoya University   Institute for Advanced Research   Researcher

    2015.4

  10. JSPS Research Fellow (PD)

    2012.4 - 2015.3

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    Country:Japan

  11. JSPS Research Fellow (DC1)

    2009.4 - 2012.3

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    Country:Japan

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Education 4

  1. Kyushu University

    - 2012.3

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    Country: Japan

  2. Kyushu University

    - 2009.3

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    Country: Japan

  3. Kyushu University   Faculty of Engineering

    - 2007.3

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    Country: Japan

  4. Ibaraki National College of Technology

    - 2005.3

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    Country: Japan

Professional Memberships 4

  1. The Japan Society of Applied Physics (JSAP)

  2. The Japan Society of Vacuum and Surface Science (JVSS)

  3. The Institute of Electronics, Information and Communication Engineers of Japan (IEICE)

  4. The Thermoelectrics Society of Japan (TSJ)

Committee Memberships 10

  1. 応用物理学会東海地区若手チャプター   副代表  

    2022.1   

  2. ISCSI-IX   実行委員  

    2022   

  3. 応用物理学会東海支部   庶務幹事補佐  

    2021.4   

  4. 応用物理学会東海地区若手チャプター   副代表庶務、web担当  

    2021.1 - 2021.12   

  5. 第82回応用物理学会秋季学術講演会   現地実行委員  

    2021   

  6. 応用物理学会東海地区若手チャプター   コアメンバー  

    2018   

  7. 応用物理学会フォノンエンジニアリング研究会   実行委員  

    2018   

  8. 2016年真空・表面科学合同講演会委員会   委員  

    2016   

  9. ISCSI-VII/ISTDM2016   実行委員  

    2016   

  10. 文部科学省科学技術政策研究所科学技術動向研究センター   専門調査員  

    2014.4 - 2015.3   

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Awards 11

  1. MNC2017 Award for Outstanding Paper

    2018.11   MNC Organizing Committee  

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    Country:Japan

  2. 第38回応用物理学会優秀論文賞

    2016.9   応用物理学会シリコンテクノロジー分科会  

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    Country:Japan

  3. SSDM Paper Award 2015

    2015.9   SSDM  

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    Country:Japan

  4. Best Paper Award of IWJT 2015

    2015.6   15th International Workshop on Junction Technology 2015 (IWJT 2015)  

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    Country:Japan

  5. 第6回応用物理学会シリコンテクノロジー分科会 研究奨励賞

    2015.3   応用物理学会シリコンテクノロジー分科会  

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    Country:Japan

  6. 第12回日本表面科学会中部支部研究会 講演奨励賞

    2012.12   日本表面科学会中部支部  

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    Country:Japan

  7. 2012年応用物理学会結晶工学分科会 分科会発表奨励賞

    2012.11   応用物理学会結晶工学分科会  

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    Country:Japan

  8. 第2回(平成23年度)九州大学大学院システム情報科学府優秀学生表彰

    2012.3   九州大学大学院システム情報科学府同窓会  

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    Country:Japan

  9. 第29回(2010年秋季)応用物理学会講演奨励賞

    2010.3   応用物理学会  

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  10. 第10回(2004年度)東京支部学生会講演奨励賞

    2005.5   電子情報通信学会  

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    Country:Japan

  11. 2004年度 精励賞(学業の部)

    2005.3   茨城工業高等専門学校  

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    Country:Japan

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Papers 127

  1. Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments Reviewed

    M. Itoh, M. Araidai, A. Ohta, O. Nakatsuka, and M. Kurosawa

    Japanese Journal of Applied Physics     page: Vol. 61, No. SC, pp. SC1048-1〜6   2022.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ac4140

  2. Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators Reviewed

    R. Oishi, K. Asaka, L. Bolotov, N. Uchida, M. Kurosawa, and O. Nakatsuka

    Japanese Journal of Applied Physics     page: accepted   2021.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ac4686

  3. Constructed Ge quantum dots and Sn precipitate SiGeSn hybrid film with high thermoelectric performance at low temperature region Reviewed

    Y. Peng, L. Miao, C. Liu, H. Song, M. Kurosawa, O. Nakatsuka, S. Y. Back, J. S. Rhyee, M. Murata, S. Tanemura, T. Baba, T. Baba, T. Ishizaki, and T. Mori

    Advanced Energy Materials     page: Vol. 12, Issue 2, 2103191-1〜9   2021.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/aenm.202103191

  4. Thermoelectric properties of tin-incorporated group-IV thin films Reviewed

    M. Kurosawa and O. Nakatsuka

    ECS Transactions     page: Vol. 104, No. 4, pp. 183-189   2021.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/10404.0183ecst

  5. Reinforcement of power factor in N-type multiphase thin film of Si1-x-yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity Reviewed

    H. Lai, Y. Peng, J. Gao, H. Song, M. Kurosawa, O. Nakatsuka, T. Takeuchi, and L. Miao

    Applied Physics Letters     page: Vol. 119, Issue 11, pp. 113903-1〜6   2021.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0062339

  6. Formation and Characterization of Ge1–x–YSixSny/Ge Hetero Junction Structures for Photovoltaic Cell Application Reviewed

    O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima

    ECS Transactions     page: Vol. 102, No. 4, pp. 3-9   2021.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/10204.0003ecst

  7. Close-spaced evaporation of CaGe2 films for scalable GeH film formation Reviewed

    K. O. Hara, S. Kunieda, J. Yamanaka, K. Arimoto, M. Itoh, and M. Kurosawa

    Materials Science in Semiconductor Processing     page: Vol. 132, pp. 105928-1〜6   2021.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2021.105928

  8. No external load measurement strategy for micro thermoelectric generator based on high-performance Si1-x-yGexSny film Reviewed

    Y. Peng, S. Zhu, H. Lai, J. Gao, M. Kurosawa, O. Nakatsuka, S. Tanemura, B. Peng, and L. Miao

    Journal of Materiomics     page: Vol. 7, Issue 4, pp. 665-671   2020.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jmat.2020.12.002

  9. Silicon‐based low-dimensional materials for Thermal Conductivity Suppression: Recent Advances and New Strategies to High Thermoelectric Efficiency Reviewed

    H. Lai, Y. Peng, J. Gao, M. Kurosawa, O. Nakatsuka, T. Takeuchi, and L. Miao

    Japanese Journal of Applied Physics     page: Vol. 60, No. SA, pp. SA0803-1〜15   2020.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abbb69

  10. Evaluation of Strain-Shift Coefficients for SiSn by Raman Spectroscopy Reviewed

    R. Yokogawa, M. Kurosawa, and A. Ogura

    ECS Transactions     page: Vol. 98, No. 5, pp. 291-300   2020.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/09805.0291ecst

  11. Hydrogen Desorption from Silicane and Germanane Crystals: Toward Creation of Free-Standing Monolayer Silicene and Germanene Reviewed

    M. Araidai, M. Itoh, M. Kurosawa, A. Ohta, and K. Shiraishi

    Journal of Applied Physics     page: Vol. 128, Issue 12, pp. 125301-1〜5   2020.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0018855

  12. Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Reviewed

    O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

    ECS Transactions     page: Vol. 98, No. 5, pp. 149-156   2020.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/09805.0149ecst

  13. Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping Reviewed

    Y. Peng, H. Lai, C. Liu, J. Gao, M. Kurosawa, O. Nakatsuka, T. Takeuchi, S. Zaima, S. Tanemura, and L. Miao

    Applied Physics Letters     page: Vol. 117, Issue 5, pp. 053903-1〜5   2020.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0012087

  14. Design of a Planar-type Uni-leg SiGe Thermoelectric Generator Reviewed

    S. Koike, R. Yanagisawa, M. Kurosawa, and M. Nomura

    Japanese Journal of Applied Physics     page: Vol. 59, No. 7, pp. 074003-1〜5   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ab9d5e

  15. Continuous Growth of Germanene and Stanene Lateral Heterostructures Reviewed

    T. Ogikubo, H. Shimazu, Y. Fujii, K. Ito, A. Ohta, M. Araidai, M. Kurosawa, G. L. Lay, J. Yuhara

    Advanced Materials Interfaces     page: Vol. 7, No. 10, pp. 1902132-1〜7   2020.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/admi.201902132

  16. Preparation and thermoelectric characterization of phosphorus-doped Si nanocrystals/silicon oxide multilayers Reviewed

    H. Kobayashi, R. Akaishi, S. Kato, M. Kurosawa, N. Usami, and Y. Kurokawa

    Japanese Journal of Applied Physics     page: Vol. 59, No. SG, pp. SGGF09-1〜6   2020.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab6346

  17. Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface Reviewed

    M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki

    Japanese Journal of Applied Physics     page: Vol. 59, No. SG, pp. SGGK15-1〜6   2020.2

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    DOI: 10.35848/1347-4065/ab69de

  18. 分子線エピタキシー法によるSi1-xSnx薄膜の形成

    丹下龍志, 黒澤昌志, 中塚理

    電子デバイス界面テクノロジー研究会(第25回)     page: pp. 125-128   2020.1

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  19. 多結晶Si1-x-yGexSny三元混晶薄膜の熱電特性制御

    中塚理, 彭英, 苗蕾, 高杰, 刘呈燕, 黒澤昌志, 財満鎭明

    電子デバイス界面テクノロジー研究会(第25回)     page: pp. 117-120   2020.1

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  20. Semi-ballistic thermal conduction in polycrystalline SiGe nanowires Reviewed

    N. Okamoto, R. Yanagisawa, A. Roman, Md. M. Alam, K. Sawano, M. Kurosawa, and M. Nomura

    Applied Physics Letters     page: Vol.115, Issue 25, pp. 253101-1〜4   2019.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5130659

  21. Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications Reviewed

    O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima

    ECS Transactions     page: Vol. 92, Issue 4, pp. 41-46   2019.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/09204.0041ecst

  22. Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation Reviewed

    Y. Peng, L. Miao, J. Gao, C. Liu, M. Kurosawa, O. Nakatsuka, and S. Zaima

    Scientific Reports     page: Vol. 9, No.1, pp.14342-1〜9   2019.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-019-50754-4

  23. ゲルマニウム錫Ⅳ族混晶薄膜の結晶成長と電子物性 Invited Reviewed

    中塚理, 黒澤昌志

    応用物理     page: Vol. 88, No. 9, pp. 597-603   2019.9

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.11470/oubutsu.88.9_597

  24. Formation and Optoelectronic Property of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double Heterostructure on Boron-Ion-Implanted Ge(001) Substrate Reviewed

    M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima

    Japanese Journal of Applied Physics     page: Vol. 58, No. SI, pp. SIIB23-1〜6   2019.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab1b62

  25. Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process Reviewed

    K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa

    Applied Physics Express     page: Vol. 12, No. 5, pp. 051016-1〜6   2019.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/ab1969

  26. GaSb(001)基板上に形成したSi1-xSnx薄膜の結晶構造評価

    丹下龍志, 黒澤昌志, 中塚理, 財満鎭明

    電子デバイス界面テクノロジー研究会(第24回)     page: pp. 71-74   2019.1

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

  27. ノンドープ組成傾斜SiGeワイヤの微小ゼーベック係数測定

    熊田剛大, 中村俊貴, 富田基裕, 中田壮哉, 高橋恒太, 黒澤昌志, 渡邉孝信

    電子デバイス界面テクノロジー研究会(第24回)     page: pp. 197-200   2019.1

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  28. 高Si組成Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造のエネルギーバンド構造および光電特性評価

    福田雅大, 坂下満男, 柴山茂久, 黒澤昌志, 中塚理, 財満鎭明

    電子デバイス界面テクノロジー研究会(第24回)     page: pp. 265-268   2019.1

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  29. Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination Reviewed

    M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima

    Japanese Journal of Applied Physics     page: Vol. 58, No. SA, pp. SAAD02-1〜4   2018.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/aaeb36

  30. Germanene Epitaxial Growth by Segregation through Ag(111) Thin Films on Ge(111) Reviewed

    J. Yuhara, H. Shimazu, K. Ito, A. Ohta, M. Araidai, M. Kurosawa, M. Nakatake, and G. Le Lay

    ACS Nano     page: Vol. 12, Issue 11, pp. 11632-11637   2018.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsnano.8b07006

  31. Optoelectronic properties of High-Si-content-Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure Reviewed

    M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima

    Semiconductor Science and Technology     page: Vol. 33, No. 12, pp. 124018-1〜9   2018.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/aaebb5

  32. Ultra-thin Germanium-Tin on Insulator structure through the direct bonding technique Reviewed

    T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Oka, M. Kurosawa, Y. Imai, O. Nakatsuka, and N. Uchida

    Semiconductor Science and Technology     page: Vol. 33, No. 12, pp. 124002-1〜5   2018.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/aae620

  33. Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth Reviewed

    R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, and A. Ogura

    ECS Transactions     page: Vol. 86, Issue 7, pp. 87-93   2018.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/08607.0087ecst

  34. A New Application of Ge1-xSnx: Thermoelectric Materials Reviewed

    M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

    ECS Transactions     page: Vol. 86, issue 7, pp. 321-328   2018.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/08607.0321ecst

  35. エネルギーハーベスティング応用に向けたIV族混晶(Ge1-xSnx)薄膜の結晶成長 Invited Reviewed

    黒澤昌志

    日本熱電学会学会誌     page: Vol. 15, No.1, pp.26-31   2018.8

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    Language:Japanese  

  36. Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient Reviewed

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    Japanese Journal of Applied Physics     page: Vol. 57, No. 6S1, pp. 06HD08-1〜5   2018.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.06HD08

  37. Segregated SiGe Ultrathin Layer Formation and Surface Planarization on Epitaxial Ag(111) by Annealing of Ag/SiGe(111) with Different Ge/(Si+Ge) Compositions Reviewed

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    Japanese Journal of Applied Physics     page: Vol. 57, No. 4S, pp. 04FJ05-1〜6   2018.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.04FJ05

  38. Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water Reviewed

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

    Japanese Journal of Applied Physics     page: Vol. 57, No. 4S, pp. 04FJ02-1〜6   2018.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.04FJ02

  39. High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water Reviewed

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

    Applied Physics Letters     page: Vol. 112, Issue 6, pp. 062104-1〜5   2018.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4997369

  40. Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates Reviewed

    M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima

    Applied Physics Letters     page: Vol. 111, Issue 19, pp. 192106-1〜4   2017.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4995812

  41. Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures Reviewed

    M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

    Semiconductor Science and Technology     page: Vol. 32, No. 10, pp. 104008-1〜8   2017.9

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    DOI: 10.1088/1361-6641/aa80ce

  42. First-principles study on adsorption structures and electronic states of stanene on α-alumina surface Reviewed

    M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi

    Japanese Journal of Applied Physics     page: Vol. 56, No. 9, pp. 095701-1〜4   2017.8

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    DOI: 10.7567/JJAP.56.095701

  43. Growth and Applications of Si1-xSnx Thin Films Reviewed

    M. Kurosawa, O. Nakatsuka, and S. Zaima

    ECS Transactions     page: Vol. 80, Issue 4, pp. 253-258   2017.8

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    DOI: 10.1149/08004.0253ecst

  44. エピタキシャルAg(111)上の極薄IV族結晶形成

    伊藤公一, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮崎誠一

    電子情報通信学会 信学技報     page: Vol. 117, No. 101, pp. 43-48   2017.6

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  45. Evaluation of energy band offset of Si1-xSnx semiconductors by numerical calculation using density functional theory Reviewed

    Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima

    Japanese Journal of Applied Physics     page: Vol. 56, No. 4S, pp.04CR10-1〜5   2017.3

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    DOI: 10.7567/JJAP.56.04CR10

  46. Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate Reviewed

    I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

    Materials Science in Semiconductor Processing     page: Vol. 70, pp. 151-155   2017.1

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    DOI: 10.1016/j.mssp.2016.12.038

  47. 水中パルスレーザアニールを用いた多結晶Ge1-xSnx層中Sbの高活性化

    高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明

    電子デバイス界面テクノロジー研究会(第22回)     page: pp. 67-70   2017.1

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  48. Hydrogen-surfactant-mediated epitaxy of Ge1-x Snx layer and its effects on crystalline quality and photoluminescence property Reviewed

    O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida, and S. Zaima

    Japanese Journal of Applied Physics     page: Vol. 56, No. 1S, pp. 01AB05-1〜6   2016.12

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    DOI: 10.7567/JJAP.56.01AB05

  49. Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties Reviewed

    S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

    Japanese Journal of Applied Physics     page: Vol. 56, No. 1S, pp. 01AB02-1〜7   2016.11

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    DOI: 10.7567/JJAP.56.01AB02

  50. Large single-crystal Ge-on-insulator by thermally-assisted (~400C) Si-seeded-pulse-laser annealing Reviewed

    T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, and M. Miyao

    Materials Science in Semiconductor Processing     page: Vol. 70, pp. 8-11   2016.11

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    DOI: 10.1016/j.mssp.2016.10.033

  51. Formation and characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers Reviewed

    M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima

    Materials Science in Semiconductor Processing     page: Vol. 70, pp. 156-161   2016.10

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    DOI: 10.1016/j.mssp.2016.10.024

  52. Thermoelectric Properties of Ge-Rich GeSn Films Grown on Insulators Reviewed

    M. Kurosawa, K. Liu, M. Izawa, I. Tsunoda, and S. Zaima

    ECS Transactions     page: Vol. 75, Issue 8, pp. 481-487   2016.9

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    DOI: 10.1149/07508.0481ecst

  53. 金属誘起層交換法によるAg上Si, Ge極薄膜の形成 ーシリセン, ゲルマネンの創製を目指してー Invited Reviewed

    黒澤昌志, 大田晃生, 洗平昌晃, 財満鎭明

    表面科学     page: Vol. 37, No. 8, pp. 374-379   2016.8

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    DOI: 10.1380/jsssj.37.374

  54. Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys Reviewed

    Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima

    Japanese Journal of Applied Physics     page: Vol. 55, No. 8S2, pp. 08PE04-1〜4   2016.7

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    DOI: 10.7567/JJAP.55.08PE04

  55. Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process Reviewed

    M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima

    Japanese Journal of Applied Physics     page: Vol. 55, No. 8S1, pp. 08NB07-1〜5   2016.7

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    DOI: 10.7567/JJAP.55.08NB07

  56. Sn系IV族半導体混晶薄膜の成長と物性評価

    志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明

    電子情報通信学会 信学技報     page: Vol. 116, No. 1, pp. 23-26   2016.4

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  57. Growth of ultrahigh-Sn-content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact Reviewed

    A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

    Japanese Journal of Applied Physics     page: Vol. 55, No. 4S, pp. 04EB12-1〜6   2016.3

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    DOI: 10.7567/JJAP.55.04EB12

  58. Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer Reviewed

    J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

    Japanese Journal of Applied Physics     page: Vol. 55, No. 4S, pp. 04EB13-1〜5   2016.3

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    DOI: 10.7567/JJAP.55.04EB13

  59. Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution Reviewed

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

    Applied Physics Letters     page: Vol. 108, Issue 5, pp. 052104-1〜4   2016.2

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    DOI: 10.1063/1.4941236

  60. 界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長

    吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    電子デバイス界面テクノロジー研究会(第21回)     page: pp. 21-24   2016.1

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  61. Si1–xSnx半導体のエネルギーバンド構造に関する理論的および実験的分析

    長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明

    電子デバイス界面テクノロジー研究会(第21回)     page: pp. 17-20   2016.1

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  62. Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators Reviewed

    T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

    Transaction of the Materials Research Society of Japan     page: Vol. 40, No. 4, pp. 351-354   2015.12

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    DOI: 10.14723/tmrsj.40.351

  63. Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnx epitaxial layers on Si(110) substrates Reviewed

    S. Kidowaki, T. Asano, Y. Shimura, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima

    Thin Solid Films     page: Vol. 598, 1 January 2016, pp. 72–81   2015.12

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    DOI: 10.1016/j.tsf.2015.11.048

  64. Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer Reviewed

    A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

    Applied Physics Letters     page: Vol. 107, Issue 21, pp. 212103-1〜5   2015.11

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    DOI: 10.1063/1.4936275

  65. Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits Reviewed

    S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawaa, W. Takeuchi, M. Sakashita

    ECS Transactions     page: Vol. 69, Issue 10, pp. 89-98   2015.10

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    DOI: 10.1149/06910.0089ecst

  66. High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization Reviewed

    W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

    Applied Physics Letters     page: Vol. 107, Issue 2, pp.022103-1〜4   2015.7

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    DOI: 10.1063/1.4926507

  67. Growth and Application of GeSn-Related Group-IV Semiconductor Materials Invited Reviewed

    S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita

    Science and Technology of Advanced Materials     page: Vol.16, Issue 4, pp. 043502-1〜22   2015.7

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    DOI: 10.1088/1468-6996/16/4/043502

  68. Characterization of locally strained Ge1-xSnx/Ge fine structures by synchrotron X-ray microdiffraction Reviewed

    S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

    Applied Physics Letters     page: Vol. 106, Issue 18, pp. 182104-1〜5   2015.5

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    DOI: 10.1063/1.4921010

  69. Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers Reviewed

    M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima

    Applied Physics Letters     page: Vol. 106, Issue 17, pp. 171908-1〜5   2015.4

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    DOI: 10.1063/1.4919451

  70. 高Sn組成SiSnの形成とバンド構造 〜直接遷移構造化を目指して〜

    黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    電子情報通信学会 信学技報     page: Vol. 115, No. 18, pp. 35-37   2015.4

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  71. Formation, crystalline structure, and optical properties of Ge1-x-ySnxCy ternary alloy layers Reviewed

    T. Yamaha, K. Terasawa, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    Japanese Journal of Applied Physics     page: Vol. 54, Issue 4S, pp. 04DH08-1〜6   2015.2

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    DOI: 10.7567/JJAP.54.04DH08

  72. Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2 Reviewed

    T. Yamaha, M. Kurosawa, T. Ohmura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    Solid State Electronics     page: Vol. 110, pp. 54-58   2015.2

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    DOI: 10.1016/j.sse.2015.01.005

  73. Epitaxial growth and crystalline properties of Ge1-x-ySixSny layers on Ge(001) substrates Reviewed

    T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    Solid State Electronics     page: Vol. 110, pp. 49-53   2015.2

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    DOI: 10.1016/j.sse.2015.01.006

  74. Sn/Ge コンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減

    鈴木陽洋, 鄧云生, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」(第20回研究会)     page: pp. 59-62   2015.1

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  75. Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS Reviewed

    Y. Kamata, M. Koike, E. Kurosawa, M. Kurosawa, H. Ota, O. Nakatsuka, S. Zaima, and T. Tezuka

    Applied Physics Express     page: Vol. 7, No. 12, pp.121302-1〜4   2014.11

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    DOI: 10.7567/APEX.7.121302

  76. Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO2 substrates Reviewed

    M. Kurosawa, T. Sadoh, and M. Miyao

    Journal of Applied Physics     page: Vol. 116, Issue17, pp.173510-1〜8   2014.11

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    DOI: 10.1063/1.4901262

  77. Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates Reviewed

    O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, S. Ike, M. Kurosawa, W. Takeuchi, and S. Zaima

    ECS Transactions     page: Vol. 64, Issue 6, pp. 793-799   2014.10

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    DOI: 10.1149/06406.0793ecst

  78. Sn/Geコンタクトにおけるフェルミレベルピニング現象の軽減

    鈴木陽洋, 朝羽俊介, 横井淳, 中塚理, 黒澤昌志, 加藤公彦, 坂下満男, 田岡紀之, 財満鎭明

    電子情報通信学会 信学技報      page: vol. 114, no. 88, pp. 11-16   2014.6

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  79. 絶縁膜上における IV 族半導体の低温形成 〜低融点 Sn の活用〜

    黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    電子情報通信学会 信学技報      page: vol. 114, no. 88, pp. 91-95   2014.6

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  80. Dynamics Analysis of Rapid-Melting Growth Using SiGe on Insulator Reviewed

    R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh, and M. Miyao

    Thin Solid Films     page: Vol. 557, pp. 125–128   2014.4

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    DOI: 10.1016/j.tsf.2013.08.129

  81. Coherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization Reviewed

    T. Sadoh, M. Kurosawa, K. Toko, and M. Miyao

    Thin Solid Films     page: Vol. 557, pp. 135–138   2014.4

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    DOI: 10.1016/j.tsf.2013.08.127

  82. Influence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers Reviewed

    T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima

    Thin Solid Films     page: Vol. 557, pp. 159–163   2014.4

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    DOI: 10.1016/j.tsf.2013.10.087

  83. Formation and characterization of locally strained Ge1-xSnx/Ge microstructures Reviewed

    S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

    Thin Solid Films     page: Vol. 557, pp. 164–168   2014.4

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    DOI: 10.1016/j.tsf.2013.08.126

  84. Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode Reviewed

    A. Suzuki, S. Asaba, J. Yokoi, K. Kato, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

    Japanese Journal of Applied Physics     page: Vol. 53, Issue 4S, pp. 04EA06-1〜5   2014.3

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    DOI: 10.7567/JJAP.53.04EA06

  85. Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and melt-back-growth in solid-liquid coexisting region Reviewed

    R. Matsumura, R. Kato, Y. Tojo, M. Kurosawa, T. Sadoh, and M. Miyao

    Electrochemical and Solid-State Letters     page: Vol. 3, Isuue 5, pp. P61-P64   2014.3

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    DOI: 10.1149/2.003405ssl

  86. Large grain growth of Ge-rich Ge1-xSnx (x=0.02) on insulating surfaces using pulsed laser annealing in flowing water Reviewed

    M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima

    Applied Physics Letters     page: Vol. 104, Issue 6, pp. 061901-1〜4   2014.2

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    DOI: 10.1063/1.4864627

  87. Characterization of Local Strain Structures in Heteroepitaxial Ge1-xSnx/Ge Microstructures by using Microdiffraction Method Reviewed

    S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

    ECS Transactions     page: Vol. 58, Issue 9, pp. 185-192   2013.10

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    DOI: 10.1149/05809.0185ecst

  88. Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunitiesi Reviewed

    O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, and S. Zaima

    ECS Transactions     page: Vol. 58, Issue 9, pp. 149-155   2013.10

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    DOI: 10.1149/05809.0149ecst

  89. Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible Electronics Reviewed

    T. Sadoh, J.-H. Park, M. Kurosawa, and M. Miyao

    ECS Transactions     page: Vol. 58, Issue 9, pp. 213-221   2013.10

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    DOI: 10.1149/05809.0213ecst

  90. Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer Reviewed

    M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima

    Applied Physics Letters     page: Vol. 103, Issue 11, pp. 101904-1〜4   2013.9

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    DOI: 10.1063/1.4820405

  91. Nucleation-controlled gold-induced crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (~250oC) Reviewed

    J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh

    Applied Physics Letters     page: Vol. 103, Issue 8, pp. 082102-1〜4   2013.8

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    DOI: 10.1063/1.4819015

  92. Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates Reviewed

    K. Toko, N. Fukata, K. Nakazawa, M. Kurosawa, N. Usami, M. Miyao, T. Suemasu

    Journal of Crystal Growth     page: Vol. 372, pp. 189–192   2013.6

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    DOI: 10.1016/j.jcrysgro.2013.03.031

  93. High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth Reviewed

    Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao

    Applied Physics Letters     page: Vol. 102, Issue 2, pp. 092102-1〜4   2013.3

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    DOI: 10.1063/1.4794409

  94. Atomically-coherent-coalescence of two growth-fronts in Ge stripes on insulator by rapid-melting lateral-crystallization Reviewed

    M. Kurosawa, K. Toko, T. Sadoh, I. Mizushima, and M. Miyao

    ECS Journal of Solid State Science and Technology     page: Vol. 2, Issue 3, pp. P54-P57   2012.12

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    DOI: 10.1149/2.005303jss

  95. Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth Reviewed

    R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh, I. Mizushima, and M. Miyao

    Applied Physics Letters     page: Vol. 101, Issue 24, pp. 241904-1〜5   2012.12

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    DOI: 10.1063/1.4769998

  96. Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process Reviewed

    R. Kato, M. Kurosawa, R. Matsumura, T. Sadoh, and M. Miyao

    ECS Transactions     page: Vol. 50, Issue 9, pp. 431-436   2012.10

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    DOI: 10.1149/05009.0431ecst

  97. (Invited) Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal --- Reviewed

    M. Miyao, M. Kurosawa, K. Toko, Y. Tojo, and T. Sadoh

    ECS Transactions     page: Vol. 50, Issue 5, pp. 59-70   2012.10

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    DOI: 10.1149/05005.0059ecst

  98. Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting- Growth Reviewed

    R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao

    ECS Transactions     page: Vol. 50, Issue 9, pp. 747-751   2012.10

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    DOI: 10.1149/05009.0747ecst

  99. Formation of Large-Grain Ge(111) Films on Insulator by Gold-Induced Layer-Exchange Crystallization at Low Temperature Poster Session Reviewed

    J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh

    ECS Transactions     page: Vol. 50, Issue 9, pp. 475-480   2012.10

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    DOI: 10.1149/05009.0475ecst

  100. Single-crystalline laterally-graded GeSn on insulator structures by segregation controlled rapid-melting growth Reviewed

    M. Kurosawa, Y. Tojo, R. Matsumura, T. Sadoh, and M. Miyao

    Applied Physics Letters     page: Vol. 101, Issue 9, pp. 091905-1〜4   2012.8

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    DOI: 10.1063/1.4748328

  101. Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization Reviewed

    K. Toko, M. Kurosawa, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao, and T. Suemasu

    Applied Physics Letters     page: Vol. 101, Issue 7, pp. 072106-1〜3   2012.8

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    DOI: 10.1063/1.4744962

  102. Enhanced Interfacial-Nucleation in Al-Induced Crystallization for (111) Oriented Si1-xGex (0<x<1) Films on Insulating Substrates Reviewed

    M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao

    ECS Journal of Solid State Science and Technology     page: Vol. 1, Issue 3, pp. P144-P147   2012.8

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    DOI: 10.1149/2.010203jss

  103. SiGeミキシング誘起溶融成長によるGOI(Ge on Insulator)の形成―人工単結晶への道― Invited Reviewed

    宮尾正信,佐道泰造,都甲薫,黒澤昌志

    応用物理     page: Vol. 81, No. 5, pp. 410-414   2012.5

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    DOI: 10.11470/oubutsu.81.5_410

  104. Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth Reviewed

    M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao

    Applied Physics Letters     page: Vol. 100, Issue 17, pp. 172107-1〜5   2012.4

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    DOI: 10.1063/1.4705733

  105. 界面酸化膜挿入型 Au 誘起層交換成長法による大粒径 Ge(111)/絶縁膜の低温成長-界面酸化膜厚依存性-

    鈴木恒晴, パク・ジョンヒョク, 黒澤昌志, 宮尾正信, 佐道泰造

    電子情報通信学会 信学技報      page: vol. 112, no. 18, pp. 71-73   2012.4

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  106. 絶縁膜上におけるGe(Si)薄膜の溶融成長 〜Si偏析効果による大粒径化〜

    加藤立奨,黒澤昌志,横山裕之,佐道泰造,宮尾正信

    電子情報通信学会 信学技報      page: vol. 112, no. 18, pp. 61-62   2012.4

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  107. Enhancement of SiN-Induced Compressive and Tensile Strains in Si Free-Standing Microstructures by Modulation of SiN Network Structures Reviewed

    T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, M. Miyao

    Thin Solid Films     page: Vol. 520, Issue 8, pp. 3276–3278   2012.2

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    DOI: 10.1016/j.tsf.2011.10.088

  108. Low Temperature (~250oC) Layer Exchange Crystallization of Si1-xGex (x= 1-0) on Insulator for Advanced Flexible Devices Reviewed

    J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh

    Thin Solid Films     page: Vol. 520, Issue 8, pp. 3293–3295   2012.2

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    DOI: 10.1016/j.tsf.2011.10.087

  109. Au-catalyst induced low temperature (~250oC) layer exchange crystallization for SiGe on insulator Reviewed

    J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh

    ECS Transactions     page: Vol. 35, Issue 5, pp. 39-42   2011.5

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    DOI: 10.1149/1.3570774

  110. Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization Reviewed

    M. Kurosawa, N. Kawabata, R. Kato, T. Sadoh, and M. Miyao

    ECS Transactions     page: Vol. 35, Issue 5, pp. 51-54   2011.5

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    DOI: 10.1149/1.3570776

  111. Low-temperature (~250oC) Cu-induced lateral crystallization of Ge on insulator Reviewed

    T. Sadoh, M. Kurosawa, T. Hagihara, K. Toko, and M. Miyao

    Electrochemical and Solid-State Letters     page: Vol. 17, Issue 7, pp. H274-H276   2011.4

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    DOI: 10.1149/1.3582794

  112. Au-induced low-temperature (~250oC) crystallization of Si on insulator through layer-exchange process Reviewed

    J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh

    Electrochemical and Solid-State Letters     page: Vol. 14, Issue 6, pp. H232-H234   2011.3

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    DOI: 10.1149/1.3562275

  113. SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-on-Insulator Reviewed

    T. Sadoh, K. Toko, M. Kurosawa, T. Tanaka, T. Sakane, Y. Ohta, N. Kawabata, H. Yokoyama, and M. Miyao

    Key Engineering Materials     page: Vol. 470, pp. 8-13   2011.2

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    DOI: 10.4028/www.scientific.net/KEM.470.8

  114. Al-Induced Oriented-Crystallization of Si Films on Quartz and Its Application to Epitaxial-Template for Ge Growth Reviewed

    M. Kurosawa, K. Toko, N. Kawabata, T. Sadoh, and M. Miyao

    Solid State Electronics     page: Volume 60, Issue 1, pp. 7–12   2011.2

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    DOI: 10.1016/j.sse.2011.01.033

  115. Dehydrogenation-enhanced large strain (~1.6%) in free-standing Si microstructures covered with SiN stress liners Reviewed

    M. Kurosawa, T. Sadoh, and M. Miyao

    Electrochemical and Solid-State Letters     page: Vol. 14, Issue 4, pp. H174-H176   2011.2

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    DOI: 10.1149/1.3551465

  116. Selective-mapping of uniaxial and biaxial strains in SOI micro-structures by polarized micro-probe Raman spectroscopy Reviewed

    M. Kurosawa, T. Sadoh, and M. Miyao

    Applied Physics Letters     page: Vol. 98, Issue 1, pp. 012110-1-3   2011.1

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    DOI: 10.1063/1.3535606

  117. High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates Reviewed

    M. Miyao, K. Toko, M. Kurosawa, T. Tanaka, T. Sakane, Y. Ohta, N. Kawabata, H. Yokoyama, and T. Sadoh

    Proceeding of ICSICT2010 (IEEE)     page: pp.827-830   2010.12

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    DOI: 10.1109/ICSICT.2010.5667440

  118. Low-temperature (<250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique Reviewed

    J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh

    Proceeding of TENCON2010 (IEEE)     page: pp.2196-2198   2010.11

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    DOI: 10.1109/TENCON.2010.5686705

  119. (100) orientation-controlled Ge giant-stripes on insulating substrates by rapid-melting growth combined with Si micro-seed technique Reviewed

    K. Toko, M. Kurosawa, H. Yokoyama, N. Kawabata, T. Sakane, Y. Ohta, T. Tanaka, T. Sadoh, and M. Miyao

    Applied Physics Express     page: Vol. 3, No. 7, pp. 075603-1-3    2010.6

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    DOI: 10.1143/APEX.3.075603

  120. ガラス上におけるSiGe薄膜のアルミニウム誘起結晶化とその成長メカニズム 

    川畑直之, 黒澤昌志, 佐道泰造, 宮尾正信 

    電子情報通信学会 信学技報      page: Vol. 110, No. 15, pp. 13-17    2010.4

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  121. Al-Induced Low-Temperature Crystallization of Si1-xGex (0<x<1) by Controlling Layer Exchange Process Reviewed

    M. Kurosawa, T. Sadoh, and M. Miyao

    Thin Solid Films     page: Vol. 518,Issue 6, Supplement 1, pp. S174-S178    2010.1

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    DOI: 10.1016/j.tsf.2009.10.082

  122. Stress-enhancement in free-standing Si pillars through non-equilibrium dehydrogenation in SiN:H stress-liners by UV-light irradiation Reviewed

    T. Tanaka, T. Sadoh, M. Kurosawa, M. Tanaka, M. Yamaguchi, S. Suzuki, T. Kitamura, and M. Miyao

    Applied Physics Letters     page: Vol. 95, Issue 26, pp. 262103-1-3    2009.12

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    DOI: 10.1063/1.3278596

  123. Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation Reviewed

    M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao

    Applied Physics Letters     page: Vol. 95, Issue 13, pp. 132103-1-3    2009.9

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    DOI: 10.1063/1.3241076

  124. アルミニウム誘起層交換法によるSiGe/ガラスの低温成長 

    黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信 

    電子情報通信学会 信学技報      page: Vol. 109, No. 20, pp. 19-23    2009.4

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  125. Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0-1) on Insulating Substrate Reviewed

    M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao

    Japanese Journal of Applied Physics     page: Vol. 48, No. 3, pp. 03B002-1-5    2009.3

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    DOI: 10.1143/JJAP.48.03B002

  126. Ge Fraction Dependence of Al-induced Crystallization of SiGe at Low Temperatures Reviewed

    M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao

    Journal of the Korean Physical Society     page: Vol. 54, No. 1, pp. 451-454    2009.1

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    DOI: 10.3938/jkps.54.451

  127. Low-Temperature Oriented-Growth in [CoPt/MgO]n Multi-Layer Reviewed

    T. Sadoh, M. Kurosawa, M. Kimura, K Ueda, M. Koyanagi, and M. Miyao

    Thin Solid Films     page: Vol. 517, Issue 1, pp. 430-433    2008.11

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    DOI: 10.1016/j.tsf.2008.08.057

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Books 1

  1. 共晶系で生じる析出現象を応用したIV族系ナノシート形成技術

    黒澤昌志, 大田晃生

    「ポストグラフェン材料の創製と用途開発最前線」-二次元ナノシートの物性評価、構造解析、合成、成膜プロセス技術、応用展開-(柚原淳司 監修), エヌ・ティー・エス  2020.4  ( ISBN:978-4-86043-657-5

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    Language:Japanese

Presentations 418

  1. Comparative Thermoelectric Performance Demonstration Between Cavity-free GeSn and Si Thermoelectric Generators

    M. M. H. Mahfuz, K. Katayama, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe

    第69回応用物理学会春季学術講演会 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  2. Si1−xGexバッファ上におけるSi1−xSnx薄膜の結晶成長

    藤本一彰, 黒澤昌志, 中塚理

    第69回応用物理学会春季学術講演会 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  3. 高抵抗Si(111)基板上におけるCaGe2薄膜の形成

    岡田和也, 伊藤麻維, 中塚理, 黒澤昌志

    第69回応用物理学会春季学術講演会 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  4. 固相エピタキシャル成長法によるPドープSi1-xSnx薄膜の形成

    大岩樹, 黒澤昌志, 中塚理

    第69回応用物理学会春季学術講演会 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  5. Formation of calcium disilicide films on Si(111) using molecular beam epitaxy International conference

    Y. Ito, O. Nakatsuka, and M. Kurosawa

    ISPlasma2022/IC-PLANTS2022 

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    Event date: 2022.3

    Language:English   Presentation type:Oral presentation (general)  

  6. Demonstration of Cavity-free GeSn Thermoelectric Generator International conference

    K. Katayama, M. M. H. Mahfuz, M. Nakata, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe

    2021 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (2021 IWDTF) 

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    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

  7. Design of a planar-type uni-leg SiGe thermoelectric generator International conference

    S. Koike, R. Yanagisawa, M. Kurosawa, and M. Nomura

    International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021) 

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    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

  8. 超⾼圧下における多結晶PtN2膜の合成と特性評価

    丹⽻健, 飯塚友規, ⿊澤昌志, 中村優⽃, 岸⽥英夫, 中塚理, 佐々⽊拓也, G. N. Alexander, ⻑⾕川正

    第62回高圧討論会 

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  9. Thermoelectric properties of tin-incorporated group-IV thin films International conference

    M. Kurosawa and O. Nakatsuka

    240th ECS Meeting 

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  10. GaAs基板上におけるSi1−xSnx薄膜の結晶成長

    藤本一彰, 黒澤昌志, 中塚理

    第82回応用物理学会秋季学術講演会 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  11. 高抵抗基板上におけるCaGe2薄膜の作製

    岡田和也, 伊藤麻衣, 中塚理, 黒澤昌志

    第82回応用物理学会秋季学術講演会 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  12. 超高圧下で単結晶サファイア基板上に成長したPtN2膜の性状と物性

    丹⽻健, 飯塚友規, ⿊澤昌志, 中村優⽃, 岸⽥英夫, 中塚理, 佐々⽊拓也, G. N. Alexander, ⻑⾕川正

    日本金属学会 2021年秋期第169回講演大会 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  13. SOI基板上におけるCaシリサイド層の形成

    伊藤善常, 中塚理, 黒澤昌志

    第82回応用物理学会秋季学術講演会 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  14. 絶縁膜上におけるCaGe2の固相成長

    大石遼, 中塚理, 黒澤昌志

    第82回応用物理学会秋季学術講演会 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  15. 透過型粉末X線回折による多層ゲルマナンの結晶構造評価

    伊藤麻維, 洗平昌晃, 大田晃生, 中塚理, 黒澤昌志

    第82回応用物理学会秋季学術講演会 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  16. Group-IV materials grown on insulator for advanced thin-film thermoelectric applications International conference

    M. Kurosawa and O. Nakatsuka

    International Conference on Solid State Devices and Materials 2021 (SSDM2021) 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  17. Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators International conference

    R. Oishi, M. Kurosawa, and O. Nakatsuka

    International Conference on Solid State Devices and Materials 2021 (SSDM2021) 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (general)  

  18. Hydrogen desorption from multilayer germanane flakes under an ultrahigh vacuum environment International conference

    M. Itoh, M. Araidai, A. Ohta, O. Nakatsuka, and M. Kurosawa

    International Conference on Solid State Devices and Materials 2021 (SSDM2021) 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (general)  

  19. Formation and Characterization of Ge1–x–YSixSny/Ge Hetero Junction Structures for Photovoltaic Cell Application International conference

    O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima

    239th ECS Meeting 

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    Event date: 2021.5 - 2021.6

    Language:English   Presentation type:Oral presentation (general)  

  20. 多結晶SiGe薄膜を用いた平面型ユニレグ熱電デバイスの作製と評価

    小池壮太, 柳澤亮人, 黒澤昌志, 野村政宏

    第68回応用物理学会春季学術講演会 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  21. Si(001)基板上におけるSi1−xSnx薄膜のエピタキシャル成長

    黒澤昌志, 丹下龍志, 中塚理

    第68回応用物理学会春季学術講演会 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  22. 近接蒸着法によるCaGe2成膜とゲルマナンへの変換

    原康祐, 國枝慎, 山中淳二, 有元圭介, 伊藤麻維, 黒澤昌志

    第68回応用物理学会春季学術講演会 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  23. SiGe薄膜熱電発電デバイス出力の膜厚依存性

    小池壮太, 柳澤亮人, 黒澤昌志, 野村政宏

    日本機械学会 熱工学コンファレンス2020 

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    Event date: 2020.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  24. Evaluation of Strain-Shift Coefficients for SiSn by Raman Spectroscopy International conference

    R. Yokogawa, M. Kurosawa, and A. Ogura

    PRiME 2020 

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    Event date: 2020.10

    Language:English   Presentation type:Oral presentation (general)  

  25. Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductors for Energy Band Design International conference

    O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

    PRiME 2020 

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    Event date: 2020.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  26. Size effect of silicon nanocrystals on Seebeck coefficient of phosphorus-doped Si nanocrystals/silicon oxide multilayers International conference

    H. Kobayashi, S. Kato, M. Kurosawa, K. Gotoh, N. Usami, and Y. Kurokawa

    International Conference on Solid State Devices and Materials 2020 (SSDM2020) 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

  27. Ge1-xSnx溶融成長時に生じる偏析現象の理解

    中尾天哉, 西島泰樹, 清水智, 角田功, 中塚理, 黒澤昌志

    第81回応用物理学会秋季学術講演会 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  28. 多結晶SiGe薄膜を用いた平面型ユニレグ熱電デバイスの設計

    小池壮太, 柳澤亮人, 黒澤昌志, 野村政宏

    第81回応用物理学会秋季学術講演会 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  29. 多層ゲルマナンフレークからの水素脱離

    伊藤麻維, 洗平昌晃, 大田晃生, 中塚理, 黒澤昌志

    第81回応用物理学会秋季学術講演会 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  30. GaAs(001)基板上におけるGe1−x−ySixSny 薄膜のエピタキシャル成長

    中田壮哉, 詹天卓, 富田基裕, 渡邉孝信, 中塚理, 黒澤昌志

    第81回応用物理学会秋季学術講演会 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  31. 絶縁膜上における極薄Ge薄膜の固相成長

    大石遼, 黒澤昌志, 中塚理

    第81回応用物理学会秋季学術講演会 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  32. UVラマン分光法による単結晶Si1-xSnxの歪換算係数導出

    横川凌, 丹下龍志, 黒澤昌志, 小椋厚志

    第67回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  33. 絶縁膜上における極薄Ge1−xSnx薄膜の固相成長

    大石遼, 中塚理, 黒澤昌志

    第67回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  34. Ge1−xSnx細線の偏析溶融成長:冷却速度の影響

    中尾天哉, 西嶋泰樹, 清水智, 角田功, 中塚理, 黒澤昌志

    第67回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  35. SbドープGe1−x−ySixSny三元混晶薄膜の熱電物性制御

    中田壮哉, 詹天卓, 富田基裕, 渡邉孝信, 中塚理, 黒澤昌志

    第67回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  36. GaドープSi1-xSnx薄膜で観測した巨大ゼーベック熱電能の理解

    佐藤啓, 洗平昌晃, 中塚理, 黒澤昌志

    第67回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  37. 近接蒸着法によるCaSi2とCaGe2の成膜

    原康祐, 瀧澤周平, 山中淳二, 黒澤昌志, 有元圭介

    第67回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  38. 多結晶SiGe薄膜を用いた熱電変換デバイスの設計

    小池壮太, 柳澤亮人, 黒澤昌志, 野村政宏

    第67回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  39. 多結晶Si1-x-yGexSny三元混晶薄膜の熱電特性制御

    中塚理, 彭英, 苗蕾, 高杰, 刘呈燕, 黒澤昌志, 財満鎭明

    電子デバイス界面テクノロジー研究会(第25回) 

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    Event date: 2020.1 - 2020.2

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  40. 分子線エピタキシー法による Si1-xSnx 薄膜の形成

    丹下龍志, 黒澤昌志, 中塚理

    電子デバイス界面テクノロジー研究会(第25回) 

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    Event date: 2020.1 - 2020.2

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  41. In-situ Sb Doping into Ge1−xSnx Epitaxial Layer toward Enhancement of Photoluminescence Intensity International conference

    M. Fukuda, J. Jeon, M. Sakashita, S. Shibayama, M. Kurosawa, and O. Nakatsuka

    8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII) 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  42. Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices International conference

    O. Nakatsuka, M. Kurosawa, S. Shibayama, M. Sakashita and S. Zaima

    8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII) 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  43. Improvement of thermoelectric properties of Si1-x-yGexSny thin films by ion implantation and rapid thermal annealing International conference

    Y. Peng, L. Miao, M. Kurosawa, and O. Nakatsuka

    International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  44. Theoretical Investigation of Self-organization Behavior of Si0.5Sn0.5 Nano-particles International conference

    Y. Nagae, M. Kurosawa, and O. Nakatsuka

    International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  45. Thermoelectric properties of silicon germanium wires with a composition gradient International conference

    M. Nakata, O. Nakatsuka, M. Tomita, T. Watanabe, and M. Kurosawa

    International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development Satellite (iLIM-s) 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  46. Optoelectronic Property of GeSn and GeSiSn Heterostructure International conference

    M. Fukuda, M. Sakashita, S. Shibayama, M. Kurosawa, S. Zaima, and O. Nakatsuka

    International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  47. Growth of Hetero-epitaxial Al on Ge(111) and Segregation of Ge Crystal by Annealing International conference

    M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki

    32nd International Microprocesses and Nanotechnology Conference (MNC2019) 

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    Event date: 2019.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  48. 白金二窒化物薄膜の超高圧合成と物性

    飯塚友規,丹羽健,黒澤昌志, 佐々木拓也,中塚理,長谷川正

    第60回高圧討論会 

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    Event date: 2019.10

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  49. Preparation of Ge1-xSnx-based Uni-leg Thermoelectric Generator International conference

    M. Kurosawa, M. Tomita, and T. Watanabe

    The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4) 

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    Event date: 2019.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  50. Power-conscious Energy Harvester Based on Si-CMOS Technology International conference

    T. Watanabe, M. Tomita, Z. Tianzhuo, and M. Kurosawa

    The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4) 

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    Event date: 2019.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  51. Temperature dependence of thermoelectric properties of Ge1−xSnx layers grown by molecular beam epitaxy International conference

    M. Kurosawa, M. Nakata, K. Ide, T. Katase, and T. Kamiya

    The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4) 

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    Event date: 2019.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  52. 高濃度SbドープによるGe1-xSnxのフォトルミネッセンス発光強度の増大

    福田雅大, 全智禧, 坂下満男, 柴山茂久, 黒澤昌志, 中塚理

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  53. イオン注入法を用いた面内組成傾斜n型Si1-xGex細線の形成

    中田壮哉, 西嶋大樹, 清水智, 角田功, 富田基裕, 渡邊孝信, 中塚理, 黒澤昌志

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  54. 偏析溶融成長法により形成した絶縁膜上Ge1-xSnx細線の電気特性評価

    中尾天哉, 西嶋泰樹, 清水智, 角田功, 中塚理, 黒澤昌志

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  55. Evaluation of Anisotropic Stress for Laterally Graded Silicon Germanium Wires by Raman Spectroscopy International conference

    R. Yokogawa, K. Takahashi, M. Kurosawa, M. Tomita, T. Watanabe, and A. Ogura

    18th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII) 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  56. Influence of Dopant on Thermoelectric Properties of Si-rich Poly-Si1-xSnx Layers Grown on Insulators International conference

    K. Sato, O. Nakatsuka, and M. Kurosawa

    International Conference on Solid State Devices and Materials 2019 (SSDM2019) 

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    Event date: 2019.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  57. First-Principles Study on Formation of Freestanding Silicene and Germanene International conference

    M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi

    International Conference on Solid State Devices and Materials 2019 (SSDM2019) 

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    Event date: 2019.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  58. Preparation and thermoelectric characterization of phosphorus-doped silicon nanocrystals/silicon oxide multilayers International conference

    H. Kobayashi, R. Akaishi, S. Kato, M. Kurosawa, N. Usami, and Y. Kurokawa

    International Conference on Solid State Devices and Materials 2019 (SSDM2019) 

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    Event date: 2019.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  59. Growth of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface International conference

    M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki

    International Conference on Solid State Devices and Materials 2019 (SSDM2019) 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  60. Germanene epitaxial growth by a segregation method on Ag(111) thin films International conference

    J. Yuhara, H. Shimazu, K. Ito, A. Ohta, M. Araidai, M. Kurosawa, M. Nakatake, and G. Le Lay

    From the NanoWorld to StarDust (NW2SD) International Conference 

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    Event date: 2019.7

    Language:English   Presentation type:Poster presentation  

    Country:France  

  61. GeSn and GeSiSn Heterostructures for Optoelectronic Applications International conference

    O. Nakatsuka, M. Fukuda, M. Kurosawa, S. Shibayama, M. Sakashita, and S. Zaima

    2019 IEEE Photonics Society Summer Topical Meeting Series 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  62. 組成傾斜シリコンゲルマニウム細線へのイオン注入ドーピング

    中田壮哉, 西嶋大樹, 清水智, 角田功, 富田基裕, 渡邊孝信, 中塚理, 黒澤昌志

    第3回応用物理学会フォノンエンジニアリング研究会 

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    Event date: 2019.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  63. 熱処理によるAl/Ge(111)上の極薄Ge層形成

    小林征登, 大田晃生, 黒澤昌志, 洗平昌晃, 田岡紀之, 池田弥央, 牧原克典, 宮﨑誠一

    電子情報通信学会 シリコン材料・デバイス(SDM)研究会 

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    Event date: 2019.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  64. Development and challenges of group-IV alloy semiconductors for nanoelectronic applications International conference

    S. Zaima, O. Nakatsuka, M. Kurosawa, M. Sakashita, and S. Shibayama

    11th International Conference on High-Performance Ceramics (CICC-11) 

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    Event date: 2019.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:China  

  65. Tin-Incorporation Effect on Thermoelectric Properties of p-type Polycrysalline Si1-xGex layers grown on SiO2 International conference

    Y. Peng, L. Miao, J. Gao, M. Kurosawa, O. Nakatsuka, and S. Zaima

    11th International Conference on High-Performance Ceramics (CICC-11) 

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    Event date: 2019.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  66. Semi-ballistic thermal phonon transport in Si1-xGex nanowires International conference

    N. Okamoto, R. Yanagisawa, M. M. Alam, K. Sawano, M. Kurosawa, and M. Nomura

    Compound Semiconductor Week 2019 

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    Event date: 2019.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  67. 架橋ゲルマネン形成に関する第一原理計算

    洗平昌晃, 黒澤昌志, 大田晃生, 白石賢二

    日本表面真空学会2019年度関東支部講演大会 

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    Event date: 2019.4

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  68. 急速溶融成長法で作製されたSiGeワイヤの熱電特性

    熊田剛大, 中村俊貴, 富田基裕, 中田壮哉, 高橋恒太, 黒澤昌志, 渡邉孝信

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  69. ヘテロエピタキシャルAl/Ge(111)上に偏析した極薄Geの化学分析

    小林征登, 大田晃生, 黒澤昌志, 洗平昌晃, 田岡紀之, 池田弥央, 牧原克典, 宮﨑誠一

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  70. 温度と組成に依存するSi1-xGexナノワイヤ中の準弾道的熱輸送

    岡本昂, 柳澤亮人, Md. Mahfuz Alam, 澤野憲太郎, 黒澤昌志, 野村政宏

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  71. 液浸ラマン分光法による組成傾斜SiGeワイヤの異方性二軸応力分布評価

    横川凌, 高橋恒太, 富田基裕, 黒澤昌志, 渡邉孝信, 小椋厚志

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  72. ノンドープ組成傾斜SiGeワイヤの微小ゼーベック係数測定

    熊田剛大, 中村俊貴, 富田基裕, 中田壮哉, 高橋恒太, 黒澤昌志, 渡邉孝信

    電子デバイス界面テクノロジー研究会(第24回) 

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    Event date: 2019.1

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  73. GaSb(001)基板上に形成したSi1-xSnx薄膜の結晶構造評価

    丹下龍志, 黒澤昌志, 中塚理, 財満鎭明

    電子デバイス界面テクノロジー研究会(第24回) 

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    Event date: 2019.1

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  74. 高Si組成Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造のエネルギーバンド構造および光電特性評価

    福田雅大, 坂下満男, 柴山茂久, 黒澤昌志, 中塚理, 財満鎭明

    電子デバイス界面テクノロジー研究会(第24回) 

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    Event date: 2019.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  75. 偏析法によりAg(111)表面上に創製されたゲルマネンの構造評価

    志満津宏樹, 柚原淳司, 仲武昌史, 伊藤公一, 大田晃生, 洗平昌晃, 黒澤昌志, Guy Le Lay

    第18回日本表面真空学会中部支部学術講演会 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  76. Ge 2D Crystal Growth on Hetero-epitaxial Ag/Ge(111) by N2 Annealing International conference

    A. Ohta, K. Ito, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    49th IEEE Semiconductor Interface Specialists Conference (SISC) 

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    Event date: 2018.12

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  77. GeSn-related group-IV semiconductor heterostructures for electronic and optoelectronic applications International conference

    O. Nakatsuka, M. Fukuda, M. Kurosawa, M. Sakashita, and S. Zaima

    12th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  78. エピタキシャルAl/Ge(111)の形成と真空中熱処理による表面平坦化およびGe析出

    小林征登, 大田晃生, 黒澤昌志, 洗平昌晃, 田岡紀之, 池田弥央, 牧原克典, 宮﨑誠一

    第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  79. GaSb(001)基板上におけるSi1-xSnx薄膜の固相成長

    丹下龍志, 黒澤昌志, 中塚理, 財満鎭明

    第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  80. First-Principles Study on Hydrogen Adsorption and Desorption of Silicene and Germanene International conference

    M. Araidai, M. Kurosawa, A. Ohta, K. Shiraishi

    14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26) 

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    Event date: 2018.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  81. Formation and Optoelectronic Characterization of Strain-relaxed Ge1−x−ySixSny/Ge1−xSnx/Ge1−x−ySixSny Double-heterostructure International conference

    M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

    14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26) 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  82. Thermoelectric Performance of Polycrystalline Si1-x-yGexSny Ternary Alloy Layer Prepared with Ion Implantation International conference

    Y. Peng, M. Kurosawa, O. Nakatsuka, J. Gao, L. Miao, and S. Zaima

    14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26) 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  83. 次世代半導体デバイスに向けたIV族混晶薄膜の形成と物性制御

    高橋恒太, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明

    第10回半導体材料・デバイスフォーラム 

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    Event date: 2018.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  84. First-principles study on hydrogen adsorption-desorption property and simulated STM Images of germanene

    M. Araidai, M. Kurosawa, A. Ohta, K. Shiraishi

    第2回 ポストグラフェン材料のデバイス開発研究会 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  85. Why chose a diffusion method towards creation of silicene & germanene?

    M. Kurosawa, A. Ohta, and M. Araidai

    第2回 ポストグラフェン材料のデバイス開発研究会 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  86. Two dimensional Ge crystal growth by annealing of Metal/Ge stack

    A. Ohta, K. Ito, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    第2回 ポストグラフェン材料のデバイス開発研究会 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  87. Composition and Strain Engineering of New Group-IV Thermoelectric Materials International conference

    M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

    AiMES 2018 Meeting 

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    Event date: 2018.9 - 2018.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Mexico  

  88. Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices fabricated by Rapid Melting Growth International conference

    R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, and A. Ogura

    AiMES 2018 Meeting 

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    Event date: 2018.9 - 2018.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Mexico  

  89. Formation of laterally graded SixGe1-x stripes for thermoelectric generator International conference

    M. Nakata, K. Takahashi, T. Nishijima, S. Shimizu, I. Tsunoda, O. Nakatsuka, S. Zaima, T. Watanabe, and M. Kurosawa

    The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3) 

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    Event date: 2018.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  90. 真空蒸着によるGe(111)上のAlヘテロエピタキシャル成長

    小林征登, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮﨑誠一

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  91. スマートウォッチを支える熱電デバイスについて考える

    黒澤昌志

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  92. 溶融成長法によるGe1-xSnx細線の形成と電気特性評価

    髙橋恒太, 今井祐太, 西嶋泰樹, 清水智, 黒澤昌志, 角田功, 中塚理, 財満鎭明

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  93. 熱電特性評価に向けた組成傾斜SixGe1-x細線の形成

    中田壮哉, 髙橋恒太, 西嶋泰樹, 清水智, 角田功, 中塚理, 財満鎭明, 渡邉孝信, 黒澤昌志

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  94. SiO2上に形成したGe1-xSnx多結晶薄膜の熱電特性評価

    今井志明, 髙橋恒太, 中塚理, 財満鎭明, 黒澤昌志

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  95. GaSb基板上におけるSi1-xSnx薄膜の結晶成長

    丹下龍志, 黒澤昌志, 中塚理, 財満鎭明

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  96. 高Si組成歪緩和Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造の形成および光電特性評価

    福田雅大, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  97. Ag(111)表面上に偏析したGe原子が形成する二次元構造

    志満津宏樹, 柚原淳司, 仲武昌史, 伊藤公一, 大田晃生, 洗平昌晃, 黒澤昌志

    日本物理学会 2018年秋季大会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  98. IV族混晶薄膜の結晶成長と熱電デバイスへの応用

    黒澤昌志

    第68回フロンティア材料研究所学術講演会「革新的エナジーハーベスティングに向けた創エネルギー材料とデバイスの研究開発」 

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    Event date: 2018.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  99. Thin film growth and characterization of group-IV alloy semiconductors for future nanoelectronic applications International conference

    O. Nakatsuka, M. Kurosawa, and S. Zaima

    9th International Conference on Physics and Its Applications (ICOPIA) 

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    Event date: 2018.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Indonesia  

  100. 単結晶p型Ge0.95Sn0.05薄膜の熱電特性におけるドメインサイズの効果

    今井志明, 髙橋恒太, 内田紀行, 前田辰郎, 中塚理, 財満鎭明, 黒澤昌志

    第2回フォノンエンジニアリング研究グループ研究会 

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    Event date: 2018.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  101. 多結晶Ge1-xSnx薄膜熱電素子の低温形成

    髙橋恒太, 池上浩, 坂下満男, 中塚理, 財満鎭明, 黒澤昌志

    第2回フォノンエンジニアリング研究グループ研究会 

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    Event date: 2018.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  102. Engineering optoelectronic properties of high-Sn-content GeSn, GeSiSn, and SiSn thin films International conference

    O. Nakatsuka, M. Kurosawa, M. Fukuda, M. Sakashita, W. Takeuchi, and S. Zaima

    IEEE Photonics Society Summer Topical Meeting Series 2018 

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  103. GeSn-based thin film thermoelectric generators International conference

    M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

    International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (THERMEC'2018) 

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:France  

  104. Engineering electronic properties of GeSn-related group-IV thin films for nanoelectronic applications International conference

    O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

    2018 E-MRS Spring Meeting 

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    Event date: 2018.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:France  

  105. Optoelectronic Characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure with High-Si-Content Ge1-x-ySixSny Layer International conference

    M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima

    1st Joint ISTDM/ICSI 2018 Conference 

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    Event date: 2018.5

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  106. Ultra-thin GeSn on Insulator structure through the direct bonding technique International conference

    T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, M. Kurosawa, Y. Imai, O. Nakatsuka, and N. Uchida

    1st Joint ISTDM/ICSI 2018 Conference 

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    Event date: 2018.5

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  107. 革新的多機能センサモジュール実現に向けた新しいIV族混晶熱電物質の創製 〜ド素人が熱電の分野に飛び込んで〜

    黒澤昌志

    " 日本熱電学会 第23回研究会「注目の熱電プロジェクト」 

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    Event date: 2018.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  108. ゲルマネンの水素吸脱着に関する第一原理計算

    洗平昌晃, 黒澤昌志, 大田晃生, 白石賢二

    日本物理学会 第73回年次大会(2018年) 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  109. 熱電デバイス用組成傾斜SiGeワイヤの構造評価

    横川凌, 橋本修一郎, 高橋恒太, 大場俊輔, 富田基裕, 黒澤昌志, 渡邉孝信, 小椋厚志

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  110. IV族混晶のマイクロ熱電発電デバイス応用

    渡邉孝信, 橋本修一郎, 富田基裕, 黒澤昌志, 池田浩也

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  111. 熱処理によるエピタキシャルAg/Ge(111)構造の表面平坦化とGe析出量制御

    伊藤公一, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮﨑誠一

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  112. Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造の光電特性評価

    福田雅大, Denis Rainko, 坂下満男, 黒澤昌志, Dan Buca, 中塚理, 財満鎭明

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  113. ドーパント種が水中パルスレーザアニールによるGe1-xSnx薄膜への高濃度ドーピングに及ぼす効果

    髙橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明

    第65回応用物理学会春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  114. Domain size effects on thermoelectric properties of p-type Ge0.95Sn0.05 layers grown on GaAs and Si substrates International conference

    Y. Imai, K. Takahashi, N. Uchida, T. Maeda, O. Nakatsuka, S. Zaima, and M. Kurosawa

    2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2018) 

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    Event date: 2018.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  115. Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment International conference

    S. Hashimoto, K. Takahashi, S. Oba, T. Terada, M. Ogasawara, M. Tomita, M. Kurosawa, and T. Watanabe

    2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2018) 

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    Event date: 2018.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  116. Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator International conference

    K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa

    2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2018) 

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    Event date: 2018.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  117. Heavily p-type doping to Si1-xSnx layers grown on SOI substrates International conference

    Y. Inaishi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

    ISPlasma2018/IC-PLANTS2018 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  118. Crystal growth of GeSn-based materials and its application for thin-film thermoelectric generators International conference

    M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

    2017 Global Research Efforts on Energy and Nanomaterials (GREEN 2017) 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Taiwan, Province of China  

  119. Ultrathin Ge Growth on Flat Ag Surface in Hetero-Epitaxial Ag/Ge Structure by Annealing International conference

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    The 30th International Microprocesses and Nanotechnology Conference (MNC 2017) 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  120. Ultrathin Ge Growth on Ag Surface by Annealing of Hetero-Epitaxial Ag/Ge(111) International conference

    A. Ohta, K. Ito, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    8th International Symposium on Surface Science (ISSS-8) 

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    Event date: 2017.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  121. Growth and Applications of Si1-xSnx Thin Films International conference

    M. Kurosawa, O. Nakatsuka, and S. Zaima

    232nd Electrochemical Society Meeting 

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    Event date: 2017.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  122. Characterization of Crystallinity and Energy Band Alignment of Ge1-xSnx/Ge1-x-ySixSny Heterostructure International conference

    M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

    International Conference on Materials and Systems for Sustainability 2017 (ICMaSS2017) 

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    Event date: 2017.9 - 2017.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  123. Crystal Growth of Ultrathin Si and Ge Layers on Ag Surfaces International conference

    M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima

    The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2) 

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    Event date: 2017.9 - 2017.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  124. Heavy n- and p-type doping for polycrystalline Ge1-xSnx layers using pulsed laser annealing in water International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

    The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2) 

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    Event date: 2017.9 - 2017.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  125. Numerical calculation of energy band offset of Si1–xSnx by density functional calculation International conference

    Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima

    The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2) 

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    Event date: 2017.9 - 2017.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  126. Fabrication and Thermoelectric Mechanism Study of Flexible Si1-xGex Superlattice Films International conference

    Y. Peng, L. Miao, C. Li, R. Huang, D. Urushihara, T. Asaka, M. Kurosawa, O. Nakatsuka, and S. Zaima

    International Conference on Materials and Systems for Sustainability 2017 (ICMaSS2017) 

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    Event date: 2017.9 - 2017.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  127. Growth of 2D Crystal of Group-IV Elements on Epitaxial Ag(111) International conference

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    International Conference on Solid State Devices and Materials 2017 (SSDM2017) 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  128. Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

    International Conference on Solid State Devices and Materials 2017 (SSDM2017) 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  129. Sb-doping effect on thermal and electrical properties of Ge-rich Ge1-xSnx layers International conference

    T. Iwahashi, M. Kurosawa, N. Uchida, Y. Ohishi, T. Maeda, O. Nakatsuka, and S. Zaima

    International Conference on Solid State Devices and Materials 2017 (SSDM2017) 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  130. 新しいIV族混晶熱電材料:Ge1-xSnx

    黒澤昌志, 今井志明, 岩橋泰正, 高橋恒太, 中塚理, 財満鎭明

    第14回日本熱電学会学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  131. 混晶組成および歪制御によるGe1-xSnx/Ge1-x-ySixSnyヘテロ構造のエネルギーバンド構造制御

    福田雅大, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  132. 熱電材料応用を目指した新しい IV 族混晶(Ge1-xSnx, Si1-xSnx)の開発

    黒澤昌志, 中塚理, 財満鎭明

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  133. 低温MBE法により形成したp型単結晶Ge1-xSnx薄膜の熱電特性

    今井志明, 髙橋恒太, 中塚理, 財満鎭明, 黒澤昌志

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  134. 水中パルスレーザアニール法により形成した高濃度ドープp型/n型多結晶Ge1-xSnx薄膜の熱電特性

    髙橋恒太, 池上浩, 坂下満男, 中塚理, 財満鎭明, 黒澤昌志

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  135. 歪SOI基板上に形成したSi1-xSnx薄膜への高濃度p型ドーピング

    稲石優, 黒澤昌志, 中塚理, 財満鎭明

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  136. 熱処理によるAg/Ge構造の表面平坦化とGe析出量制御

    伊藤公一, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮崎誠一

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  137. 層状化合物CaGe2を前駆体に用いたゲルマネン形成の試み

    黒澤昌志, 淺枝駿冴, 大田晃生, 洗平昌晃, 財満鎭明

    第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  138. 新しいIV族多元混晶薄膜の結晶成長とデバイス応用

    黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    2017年真空・表面科学合同講演会 

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    Event date: 2017.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  139. Synthesis of p- and n-type Ge1-xSnx thin films toward new group-IV thermoelectric materials International conference

    M. Kurosawa, Y. Imai, T. Iwahashi, A. Ohta, N. Uchida, Y. Ohishi, T. Maeda, O. Nakatsuka, and S. Zaima

    2017 Annual International Conference on Thermoelectrics (2017ICT) 

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    Event date: 2017.7 - 2017.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  140. エピタキシャルAg(111)上の極薄IV族結晶形成

    伊藤公一, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮崎誠一

    電子情報通信学会 シリコン材料・デバイス(SDM)研究会 

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    Event date: 2017.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  141. Control of lattice constant of Ge1-x-ySixSny layer for energy band engineering in Ge1-xSnx/Ge1-x-ySixSny heterostructure International conference

    M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

    10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

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    Event date: 2017.5

    Language:English   Presentation type:Poster presentation  

    Country:United Kingdom  

  142. Solid phase epitaxy of Si1-xSnx layers on various substrates International conference

    M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima

    10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

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    Event date: 2017.5

    Language:English   Presentation type:Poster presentation  

    Country:United Kingdom  

  143. Formation of heavily Sb and Ga doped poly-Ge1-xSnx layers on insulator using pulsed laser annealing in water International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

    10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

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    Event date: 2017.5

    Language:English   Presentation type:Poster presentation  

    Country:United Kingdom  

  144. アモルファス絶縁膜上におけるIV族二次元結晶の電子状態

    洗平昌晃, 黒澤昌志, 大田晃生, 白石賢二

    日本物理学会 第72回年次大会(2017年) 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  145. 熱電素子応用を目指したn型Ge0.94Sn0.06単結晶薄膜の基礎物性評価

    岩橋泰正, 黒澤昌志, 内田紀行, 大石佑治, 前田辰郎, 中塚理, 財満鎭明

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  146. 水中パルスレーザアニールを用いた多結晶Ge1-xSnxへの高濃度ドーピング

    高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  147. GaドープSi1-xSnx薄膜の結晶成長と電気特性評価

    稲石優, 黒澤昌志, 中塚理, 財満鎭明

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  148. Ge上にエピタキシャル成長したAg(111)表面の平坦化および化学構造評価

    伊藤公一, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮崎誠一

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  149. Geバッファ層導入によるSi(001)基板上への歪緩和Ge1-x-ySixSny層の形成

    渡邉千皓, 福田雅大, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  150. Impact of Thermal Annealing on Mophology and Chemical Bonding Features at Epitaxial Ag(111) Surface Grown on Ge(111) International conference

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    ISPlasma2017/IC-PLANTS2017 

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    Event date: 2017.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  151. Chemical Analysis of Epitaxial Ag(111) Surface Formed on Group-IV Semiconductor International conference

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2017.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  152. Solid phase crystallization of Ge0.98Sn0.02 layers on various insulating substrates International conference

    I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

    10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2017.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  153. 絶縁膜上にあるIV族二次元結晶の電子状態解析

    洗平昌晃, 黒澤昌志, 大田晃生, 白石賢二

    科学技術交流財団 第3回「次世代デバイス実現に向けた先端二次元物質の物理と化学」研究会 

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    Event date: 2017.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  154. 絶縁基板上におけるIV族半導体薄膜の結晶方位制御技術:二次元物質への展開

    黒澤昌志, 洗平昌晃, 伊藤公一, 大田晃生, 財満鎭明

    科学技術交流財団 第3回「次世代デバイス実現に向けた先端二次元物質の物理と化学」研究会 

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    Event date: 2017.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  155. 水中パルスレーザアニールを用いた多結晶Ge1-xSnx層中Sbの高活性化

    高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明

    電子デバイス界面テクノロジー研究会(第22回) 

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    Event date: 2017.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  156. GeSiSn/GeSn/GeSiSn積層構造の形成および結晶物性の評価

    福田雅大, 山羽隆, 浅野孝典, 藤浪俊介, 志村洋介, 黒澤昌志, 中塚理, 財満鎭明

    第16回 日本表面科学会中部支部学術講演会 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  157. First-Principles Study on Germanene and Stanene on α-Alumina International conference

    M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi

    24th International Colloquium on Scanning Probe Microscopy (ICSPM24) 

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    Event date: 2016.12

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  158. IV族半導体上に蒸着したAg薄膜の化学構造評価と反応制御

    伊藤公一, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮崎誠一

    2016年真空・表面科学合同講演会 

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    Event date: 2016.11 - 2016.12

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  159. Si(001)基板上に形成したn型Ge1-xSnx薄膜の熱電特性評価

    岩橋泰正, 黒澤昌志, 財満鎭明

    2016年真空・表面科学合同講演会 

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    Event date: 2016.11 - 2016.12

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  160. Si(001)基板上におけるSi1-xSnx薄膜の固相エピタキシャル成長

    稲石優, 黒澤昌志, 中塚理, 財満鎭明

    2016年真空・表面科学合同講演会 

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    Event date: 2016.11 - 2016.12

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  161. Formation of heavily Sb doped poly-Ge1-xSnx layer using pulsed laser annealing in water International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

    JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration" 

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    Event date: 2016.11

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  162. Growth of SiSn heteroepitaxial layers with very high Sn contents on InP(001) International conference

    M. Kurosawa, M. Kato, O. Nakatsuka, and S. Zaima

    JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration" 

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    Event date: 2016.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  163. Si および SiGe 上に形成した Ag 表面の化学分析

    伊藤公一, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮崎誠一

    第 4 回 応用物理学会スチューデントチャプター東海地区学術講演会 

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    Event date: 2016.10

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  164. GeSiSn/GeSn/GeSiSn二重ヘテロ構造形成およびGeSiSn層の歪が結晶性へ与える影響

    福田雅大, 山羽隆, 浅野孝典, 志村洋介, 黒澤昌志, 中塚理, 財満鎭明

    第 4 回 応用物理学会スチューデントチャプター東海地区学術講演会 

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    Event date: 2016.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  165. Low temperature crystallization of SiSn binary alloys International conference

    M. Kurosawa, M. Kato, O. Nakatsuka, and S. Zaima

    The 1st International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-1) 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  166. Electronic States of two-dimensional crystals of group IV element on α-Al2O3(0001) surfaces International conference

    M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi

    13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures 

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    Event date: 2016.10

    Language:English   Presentation type:Poster presentation  

    Country:Italy  

  167. Thermoelectric properties of Ge-rich GeSn films grown on insulators International conference

    M. Kurosawa, K. Liu, M. Izawae, I. Tsunoda, and S. Zaima

    PRiME 2016/230th Electrochemical Society (ECS) Meeting 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  168. Heavy Sb-doping for poly-GeSn on insulator using pulsed laser annealing in water International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

    International Conference on Solid State Devices and Materials 2016 (SSDM2016) 

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    Event date: 2016.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  169. Investigation of effects of inner stress with Sn incorporation on energy band of Si1–xSnx using density functional theory and photoelectron spectroscopy International conference

    Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima

    International Conference on Solid State Devices and Materials 2016 (SSDM2016) 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  170. Challenges in Engineering Materials Properties for GeSn Nanoelectronics International conference

    S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, and M. Sakashita

    E-MRS Fall Meeting 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Poland  

  171. Si1–xSnx価電子帯端オフセットの第一原理計算

    長江祐樹, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  172. アルミナ表面上のゲルマネンおよびスタネンの電子状態

    洗平昌晃, 黒澤昌志, 大田晃生, 白石賢二

    日本物理学会 2016年秋季大会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  173. Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS

    鎌田善己, 小池正浩, 黒澤悦男, 黒澤昌志, 太田裕之, 中塚理, 財満鎭明, 手塚勉

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  174. GeSn系IV族半導体薄膜におけるSn導入の制御と効果

    志村洋介, 池進一, Gencarelli Federica, 竹内和歌奈, 坂下満男, 黒澤昌志, Loo Roger, 中塚理, 財満鎭明

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  175. 絶縁膜上に形成したp型poly-GeSn薄膜の熱電特性評価

    黒澤昌志, 劉坤, 井澤桃香, 角田功, 財満鎭明

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  176. 水中パルスレーザアニールを用いた多結晶GeSnへの高濃度n型ドーピング

    高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明

    第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  177. Orientation Controlled Artificial Nano-crystals for Hybrid-formation of (111), (110), and (100) Ge-on-Insulator Structures International conference

    M. Miyao, M. Kurosawa, and T. Sadoh

    XIII International Conference on Nanostructured Materials (NANO 2016) 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  178. Growth and applications of GeSn-related group-IV semiconductor materials International conference

    S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, Y. Shimura, and M. Sakashita

    2016 IEEE Photonics Society Summer Topicals Meeting Series 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  179. Formation and Characterization of GeSiSn/GeSn/GeSiSn Double-Heterostructure with Strain-controlled GeSiSn layer International conference

    M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima

    8th International SiGe Technology and Device Meeting (ISTDM) 

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    Event date: 2016.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  180. Interfacial Energy Controlled Low-Temperature Crystallization of Ge-rich GeSn on Insulating Substrate International conference

    I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

    8th International SiGe Technology and Device Meeting (ISTDM) 

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    Event date: 2016.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  181. Development of GeSn thin film technology for electronic and optoelectronic applications International conference

    O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima

    2016 EMN Summer Meeting 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Mexico  

  182. Sn系IV族半導体混晶薄膜の成長と物性評価

    志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明

    電子情報通信学会 シリコン材料・デバイス(SDM)研究会  

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    Event date: 2016.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  183. Theoretical Studies on Electronic Structures of Silicene Ribbon and Silicene on Insulator International conference

    K. Shiraishi, A. Hattori, S. Tanaya, M. Araidai, A. Ohta, M. Kurosawa, Y. Hatsugai, M. Sato, and Y. Tanaka

    International SYMPOSIUM on Two-Dimensional Layered Materials and Art: Two Worlds Meet 

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    Event date: 2016.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:France  

  184. GeSiSn/GeSn/GeSiSn二重ヘテロ構造の結晶性に対するGeSiSn層の歪の影響

    福田雅大, 山羽隆, 浅野孝典, 藤浪俊介, 志村洋介, 黒澤昌志, 中塚理, 財満鎭明

    第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  185. 絶縁膜上にあるIV族系二次元結晶の電子状態解析

    洗平昌晃, 黒澤昌志, 大田晃生, 白石賢二

    日本物理学会 第71回年次大会(2016年) 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  186. Characterization of Chemical Bonding Features of Ultrathin Ge Layer Grown by Ag-Induced Layer-Exchange Method International conference

    A. Ohta, M. Kurosawa, M. Araidai, and S. Miyazaki

    ISPlasma2016/IC-PLANTS2016 

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    Event date: 2016.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  187. Solid phase crystalization of Si1-x-ySnxCy ternary alloy layers and characteriziation of its crystalline and optical properties International conference

    S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

    ISPlasma2016/IC-PLANTS2016 

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    Event date: 2016.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  188. Impact of Atomic Hydrogen Irradiation on Epitaxial Growth of Ge1-xSnx and its Crystalline Property International conference

    S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, O. Nakatsuka, H. Kishida, S. Zaima

    ISPlasma2016/IC-PLANTS2016 

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    Event date: 2016.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  189. 界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長

    吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    電子デバイス界面テクノロジー研究会(第21回) 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  190. Si1–xSnx半導体のエネルギーバンド構造に関する理論的および実験的分析

    長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明

    電子デバイス界面テクノロジー研究会(第21回) 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  191. Formation of poly-Si1-x-ySnxCy ternary alloy layer and characteriziation of its crystalline and optical properties International conference

    S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

    9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2016.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  192. Control of Schottky barrier height at metal/Ge interface by insertion of Ge1-xSnx layer International conference

    A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

    9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2016.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  193. Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

    9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2016.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  194. Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers International conference

    J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

    9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2016.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  195. Formation of GeSn layer sandwiched with strain-controlled GeSiSn layers International conference

    M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima

    9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2016.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  196. InP(001)基板上における高 Sn 組成 Si1-xSnx 層の固相エピタキシャル成長

    加藤元太, 黒澤昌志, 中塚理, 財満鎭明

    第15回 日本表面科学会中部支部 学術講演会 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  197. First-principles study on two-dimensional crystals of group IV element on insulating film International conference

    M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi

    23rd International Colloquium on Scanning Probe Microscopy (ICSPM23) 

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    Event date: 2015.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  198. Si and Ge Ultrathin Films by Ag-Induced Layer-Exchange Growth International conference

    M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima

    23rd International Colloquium on Scanning Probe Microscopy (ICSPM23) 

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    Event date: 2015.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  199. 絶縁膜上のIV族系二次元結晶に関する第一原理計算

    洗平昌晃, 黒澤昌志, 大田晃生, 白石賢二

    2015年真空・表面科学合同講演会 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  200. Ag誘起層交換成長法によるSi極薄膜の形成

    黒澤昌志, 大田晃生, 洗平昌晃, 財満鎭明

    2015年真空・表面科学合同講演会 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  201. Control of Schottky barrier height of metal/Ge interface by SnxGe1-x interlayer International conference

    A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, S. Zaima

    International Symposium on EcoTopia Science 2015 (ISETS'15) 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  202. Silicon-tin semiconductors for near-infrared optoelectronic device applications International conference

    M. Kurosawa, M. Kato, O. Nakatsuka, and S. Zaima

    International Symposium on EcoTopia Science 2015 (ISETS'15) 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  203. Calculation of Si1-xSnx Energy Band Structures by using Density Functional Theory Considering Atomic Configuration International conference

    Y. Nagae, M. Kurosawa, S. Shibayama, O. Nakatsuka, and S. Zaima

    International Symposium on EcoTopia Science 2015 (ISETS'15) 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  204. Electrical characteristics of Ge pn-junction diodes prepared by using liquid immersion laser doping International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

    International Symposium on EcoTopia Science 2015 (ISETS'15) 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  205. X-ray microdiffraction characterization of local strain distribution in GeSn/Ge nanostructures International conference

    S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

    International Symposium on EcoTopia Science 2015 (ISETS'15) 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  206. 固相成長法による Si1-x-ySnxCy 薄膜の形成および結晶・光学物性評価

    矢野翔大, 山羽隆, 黒澤昌志, 竹内和歌奈, 志村洋介, 坂下満男, 中塚理, 財満鎭明

    応用物理学会SC東海地区学術講演会2015 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  207. 超高 Sn 組成 SnxGe1-x エピタキシャル層の形成および金属/SnxGe1-x/Geコンタクトの電気伝導特性の制御

    鈴木陽洋, 中塚理, 柴山茂久, 坂下満男, 竹内和歌奈, 黒澤昌志, 財満鎭明

    応用物理学会SC東海地区学術講演会2015 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  208. 密度汎関数法による Si1–xSnx 価電子帯端準位の理論予測および実験的妥当性

    長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明

    応用物理学会SC東海地区学術講演会2015 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  209. In-situ Sb ドープ Ge1-xSnx エピタキシャル層の結晶性および電気的特性

    全智禧, 浅野孝典, 志村洋介, 竹内和歌奈, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明

    応用物理学会SC東海地区学術講演会2015 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  210. Crystal growth and energy band engineering of group-IV semiconductor thin films for nanoelectronic applications International conference

    O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima

    International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN2015) 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  211. Recent Progress of Silicon Tin Alloys for Advanced Semiconductor Devices International conference

    M. Kurosawa, O. Nakatsuka, and S. Zaima

    International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN2015) 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  212. Evaluation of energy band structure of Si1-xSnx by density functional theory calculation and photoelectron spectroscopy International conference

    Y. Nagae, S. Shibayama, M. Kurosawa, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima

    2015 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (2015 IWDTF)  

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  213. Ge基板上への超高Sn組成Ge1−xSnxエピタキシャル層の形成およびGe1−xSnx界面層が金属/Geコンタクトのショットキー障壁高さに及ぼす影響

    鈴木陽洋, 中塚理, 柴山茂久, 坂下満男, 竹内和歌奈, 黒澤昌志, 財満鎭明

    応用物理学会 結晶工学分科会主催 第4回結晶工学未来塾 

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    Event date: 2015.10

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  214. Challenges of energy band engineering with new Sn-related group IV semiconductor materials for future integrated circuits International conference

    S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita

    228th Electrochemical Society (ECS) Meeting 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  215. Impact of ultra-high Sn content SnxGe1−x interlayer on reducing Schottky barrier height at metal/n-Ge interface International conference

    A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

    International Conference on Solid State Devices and Materials 2015 (SSDM2015) 

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    Event date: 2015.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  216. Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform International conference

    S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, Shinichi Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita

    International Conference on Solid State Devices and Materials 2015 (SSDM2015) 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  217. Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type Ge1-xSnx Epitaxial Layer International conference

    J. Jeon, T. Asano, W. Takeuchi, M. Kurosawa, O. Nakatsuka, and S. Zaima

    International Conference on Solid State Devices and Materials 2015 (SSDM2015) 

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    Event date: 2015.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  218. Ge1-xSnxエピタキシャル層の結晶性および電気的特性にin-situ Sbドーピングが及ぼす影響

    全智禧, 浅野孝典, 竹内和歌奈, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  219. Si1-xSnx薄膜の固相エピタキシャル成長に与えるSn組成の効果

    加藤元太, 黒澤昌志, 中塚理, 財満鎭明

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  220. GeSn多結晶膜の移動度に与える下地絶縁膜の効果

    吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  221. Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ接合の形成および結晶性評価

    福田雅大, 山羽隆, 浅野孝典, 藤浪俊介, 黒澤昌志, 中塚理, 財満鎭明

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  222. Si1-x-ySnxCy三元混晶薄膜のエピタキシャル成長および結晶性評価

    山羽隆, 矢野翔太, 髙橋恒太, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  223. 固相成長法によるSi1-x-ySnxCy多結晶薄膜の形成および結晶構造評価

    矢野翔大, 山羽隆, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  224. Reduction of Schottky barrier height with Sn/Ge contact International conference

    A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

    JSPS International Core-to-Core Program Workshop "Atomically Controlled Processing for Ultra-large Scale Integration" 

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    Event date: 2015.7

    Language:English   Presentation type:Poster presentation  

    Country:France  

  225. Development of polycrystalline Sn-related group-IV semiconductor thin films --Aiming for 3D-IC-- International conference

    M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

    2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015) 

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    Event date: 2015.6 - 2015.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  226. Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

    15th International Workshop on Junction Technology (IWJT2015) 

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    Event date: 2015.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  227. Solid Phase Epitaxy of High Sn Content Si1-xSnx layer (x>0.2) on Ge Substrates for Optical Communication Applications International conference

    M. Kato, Y. Nagae, M. Kurosawa, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima

    9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  228. Large Single-Crystal Ge-on-Insulator by Thermally-Assisted Si-Seeded-Pulse-Laser Annealing (≤400oC) International conference

    T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, and M. Miyao

    9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) 

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    Event date: 2015.5

    Language:English   Presentation type:Poster presentation  

    Country:Canada  

  229. Thermophysical characterizations of Ge1-xSnx epitaxial layers aiming for thermoelectric devices International conference

    M. Kurosawa, M. Fukuda, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

    9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  230. 高Sn組成SiSnの形成とバンド構造 〜直接遷移構造化を目指して〜

    黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    電子情報通信学会 シリコン材料・デバイス(SDM)研究会  

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    Event date: 2015.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  231. 固相成長法による高SnC組成Ge1-x-ySnxCy三元混晶薄膜の形成および結晶構造評価

    〇小田裕貴, 山羽隆, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  232. GeSn多結晶薄膜の進展 〜3D-ICを目指して〜

    黒澤昌志, 池上浩, 田岡紀之, 中塚理, 財満鎭明

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  233. 熱電素子応用を目指したGeSn単結晶薄膜の熱物性評価

    黒澤昌志, 福田雅大, 高橋恒太, 坂下満男, 中塚理, 財満鎭明

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  234. 積層チャネル3D-IC向け極薄Body Poly-Ge p-&n-MISFETsを用いたCMOSインバーターとリング発振器の作製および動作実証

    鎌田善己, 小池正浩, 黒澤悦男, 黒澤昌志, 太田裕之, 中塚理, 財満鎭明, 手塚勉

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  235. リン酸溶液中レーザドーピングにおけるGe基板面方位の効果

    高橋恒太, 黒澤昌志, 池上浩, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  236. GGA+U法によるSi1-xSnx材料物性の精密予測

    〇長江祐樹, 黒澤昌志, 加藤元太, 柴山茂久, 中塚理, 財満鎭明

    第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  237. Sn/Geコンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減

    鈴木陽洋, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    応用物理学会 薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会 ゲートスタック研究会 ─材料・プロセス・評価の物理─(第20回記念研究会) 

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    Event date: 2015.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  238. Formation of strain-free Si1-x-yGexSny layers on Ge surfaces by using solid-liquid coexisting annealing International conference

    M. Kato, M. Kurosawa, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima

    8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2015.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  239. Crystal growth of Si1-xSnx alloys with high Sn contents International conference

    M. Kurosawa, M. Kato, Y. Nagae, T. Yamaha, O. Nakatsuka, and S. Zaima

    8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  240. Growth and characterization of Si1-x-ySnxCy ternary alloy thin films for solar cell application International conference

    T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, O. Nakatsuka, and S. Zaima

    The 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6) 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  241. Growth and Characterization of Ternary Alloy Ge1-x-ySnxCy Layers International conference

    T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

    JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Belgium  

  242. Development of metal/Ge contacts for engineering Schottky barriers International conference

    O. Nakatsuka, Y. Deng, A. Suzuki, S. Shibayama, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima

    JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Belgium  

  243. Study of Local Strain Distribution in Ge1−xSnx/Ge Fine Structures by using Synchrotron X-ray Microdiffraction International conference

    S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

    JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration 

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    Event date: 2014.11

    Language:English   Presentation type:Poster presentation  

    Country:Belgium  

  244. Sn/Ge界面の結晶構造およびショットキー障壁高さのGe面方位依存性

    鈴木陽洋, 鄧云生, 柴山茂久, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明

    応用物理学会SC東海地区学術講演会2014 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  245. リン酸溶液中レーザドーピングにより低温形成したGe pnダイオードの電気的特性

    髙橋恒太, 黒澤昌志, 池上浩, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    応用物理学会SC東海地区学術講演会2014 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  246. GeSnC 三元混晶薄膜の結晶成長および光学特性評価

    山羽隆, 小田裕貴, 黒澤昌志, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

    応用物理学会SC東海地区学術講演会2014 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  247. 固相エピタキシャル成長法を用いた高Sn組成 SiSn層の形成

    加藤元太, 黒澤昌志, 山羽隆, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    応用物理学会SC東海地区学術講演会2014 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  248. Low Schottky barrier height contacts with Sn electrode for various orientation n-Ge substrates International conference

    A. Suzuki, D. Yunsheng, S. Shibayama, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

    Advanced Metallization Conference 2014 (ADMETA Plus 2014) 

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    Event date: 2014.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  249. Poly & Epitaxial Crystallization of Silicon-Tin Binary Alloys for Future Optoelectronics International conference

    M. Kurosawa, M. Kato, K. Takahashi, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima

    16th International Conference on Thin Films (ICTF16) 

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Croatia  

  250. Epitaxial Growth of Gesn Layers on (001), (110), and (111) Si and Ge Substrates International conference

    O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, S. Ike, M. Kurosawa, W. Takeuchi, and S. Zaima

    2014 ECS (Electrochemical Society) and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting 

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Mexico  

  251. Sn/Geコンタクトにおけるショットキー障壁高さのGe面方位依存性

    鈴木陽洋, 鄧云生, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  252. Al 誘起層交換成長の物理 〜Si の面方位制御を目指して〜

    黒澤昌志, 佐道泰造, 宮尾正信

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  253. Si1-xSnx薄膜におけるバンドギャップナローウィングの初観測

    黒澤昌志, 柴山茂久, 加藤元太, 山羽隆, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  254. 固相エピタキシャル成長法による高Sn組成(>20%)SiSn薄膜の創製

    加藤元太, 黒澤昌志, 山羽隆, 田岡紀之, 中塚理, 財満鎭明

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  255. リン酸溶液中レーザドーピングによるGeダイオードの低温形成

    高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  256. Operations of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC International conference

    Y. Kamata, M. Koike, E. Kurosawa, M. Kurosawa, H. Ota, O. Nakatsuka, S. Zaima, and T. Tezuka

    International Conference on Solid State Devices and Materials 2014 (SSDM2014) 

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    Event date: 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  257. Sub-300oC fabrication of poly-GeSn junctionless tri-gate p-FETs enabling sequential 3D integration of CMOS circuits International conference

    M. Kurosawa, Y. Kamata, H. Ikenoue, N. Taoka, O. Nakatsuka, T. Tezuka, and S. Zaima

    International Conference on Solid State Devices and Materials 2014 (SSDM2014) 

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    Event date: 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  258. Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators International conference

    T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

    15th IUMRS-International Conference in Asia (IUMRS-ICA 2014) 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  259. Sn/Geコンタクトにおけるフェルミレベルピニング現象の軽減

    鈴木陽洋, 朝羽俊介, 横井淳, 中塚理, 黒澤昌志, 加藤公彦, 坂下満男, 田岡紀之, 財満鎭明

    電子情報通信学会 シリコン材料・デバイス(SDM)研究会  

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    Event date: 2014.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  260. 絶縁膜上における IV 族半導体の低温形成 〜低融点 Sn の活用〜

    黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    電子情報通信学会 シリコン材料・デバイス(SDM)研究会  

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    Event date: 2014.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  261. Epitaxial Growth and Crystalline Properties of Ge1-x-ySixSny Layers on Ge(001) Substrates International conference

    T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    International SiGe Technology and Device Meeting 2014 (ISTDM 2014)  

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Singapore  

  262. Ultralow-Temperature Catalyst-Induced-Crystallization of SiGe on Plastic for Flexible Electronics International conference

    T. Sadoh, J.-H. Park, M. Kurosawa, and M. Miyao

    International SiGe Technology and Device Meeting 2014 (ISTDM 2014)  

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Singapore  

  263. Low temperature growth of SiSn polycrystals with high Sn contents on insulating layers International conference

    M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima

    International SiGe Technology and Device Meeting 2014 (ISTDM 2014)  

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    Event date: 2014.6

    Language:English   Presentation type:Poster presentation  

    Country:Singapore  

  264. Impact of Sn Incorporation on Low Temperature Growth of Polycrystalline-Si1-xGex Layers on Insulators International conference

    T. Yamaha, T. Ohmura, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    International SiGe Technology and Device Meeting 2014 (ISTDM 2014)  

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Singapore  

  265. Crystal Growth of Sn-related Group-IV Alloy Thin Films for Advanced Si Nanoelectronics International conference

    S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, T. Asano, T. Yamaha, and W. Takeuchi

    International SiGe Technology and Device Meeting 2014 (ISTDM 2014)  

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Singapore  

  266. Growth and Crystalline Properties of Ge1-x-ySnxCy Ternary Alloy Thin Films on Ge(001) Substrate International conference

    K. Terasawa, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka,O. Nakatsuka, E. Kamiyama, R. Matsutani, R. Suwa, K. Kashima, K. Izunome, K. Sueoka, and S. Zaima

    International SiGe Technology and Device Meeting 2014 (ISTDM 2014)  

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Singapore  

  267. Formation and Electrical Properties of Metal/Ge1-xSnx Contacts International conference

    O. Nakatsuka, T. Nishimura, A. Suzuki, K. Kato, D. Yunsheng, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima

    14th International Workshop on Junction Technology 

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    Event date: 2014.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  268. 水中レーザ結晶化によるpoly-GeSnの大粒径成長とデバイス応用

    黒澤昌志, 池上浩, 鎌田善己, 田岡紀之, 中塚理, 手塚勉, 財満鎭明

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  269. X線マイクロ回折法による埋め込みGe1-xSnx/Ge微細構造内部の局所歪評価

    池進一, 守山佳彦, 黒澤昌志, 田岡紀之, 中塚理, 今井康彦, 木村滋 , 手塚勉, 財満鎭明

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  270. 液相SnへのGe優先溶融を利用したSiGeSn薄膜の極低温エピタキシャル成長

    加藤元太, 黒澤昌志, 山羽隆, 田岡紀之, 中塚理, 財満鎭明

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  271. Si添加によるSnドット化抑制と層交換成長への応用

    黒澤昌志, 田岡紀之, 中塚理, 財満鎭明

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  272. 固相エピタキシー法により形成したGe1-x-ySnxCy三元混晶薄膜の結晶構造

    小田裕貴, 山羽隆, 寺澤謙吾, 黒澤昌志, 田岡紀之, 中塚理, 財満鎭明

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  273. 高C組成Ge1-x-ySnxCy薄膜の結晶成長および結晶性評価

    山羽隆, 寺澤謙吾, 黒澤昌志, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  274. Substrate Orientation Dependence of Crystalline Structures of Epitaxial GeSn Layers International conference

    T. Asano, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima

    7th International WorkShop on New Group IVSemiconductor Nanoelectronics  

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    Event date: 2014.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  275. Sn-assisted low temperature crystallization of polycrystalline Ge1-xSnx thin-films on insulating surfaces International conference

    M. Kurosawa, T. Yamaha, W. Takeuchi, N. Taoka, O. Nakatsuka, H. Ikenoue, and S. Zaima

    7th International WorkShop on New Group IVSemiconductor Nanoelectronics  

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    Event date: 2014.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  276. Si(110)上Ge1-xSnxエピタキシャル薄膜の成長機構および転位構造

    木戸脇翔平,浅野孝典, 黒澤昌志, 田岡紀之, 中塚理,財満鎭明

    第13回 日本表面科学会中部支部 学術講演会 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  277. 低温固相成長GeへのSn導入による正孔移動度の向上

    竹内和歌奈, 田岡紀之, 黒澤昌志, 中塚理, 財満鎭明

    第13回 日本表面科学会中部支部 学術講演会 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  278. 高輝度放射光X線マイクロ回折法によるGe1−xSnx/Ge微細構造内部の局所歪評価

    池進一, 守山佳彦, 黒澤昌志, 田岡紀之, 中塚理, 今井康彦, 木村滋, 手塚勉, 財満鎭明

    第13回 日本表面科学会中部支部 学術講演会 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  279. Sn-related Group-IV Semiconductor Materials for Electronic and Optoelectronic Applications International conference

    O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

    The 3rd International Conference on Nanoteck & Expo 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  280. 非晶質SiGe混晶薄膜の結晶化に対するSn導入効果

    山羽隆, 黒澤昌志, 荒平貴光, 田岡紀之, 中塚理, 財満鎭明

    応用物理学会SC東海地区学術講演会2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  281. Sn/n型Ge接合界面におけるフェルミレベルピニング変調

    鈴木陽洋, 朝羽俊介, 横井淳, 加藤公彦, 黒澤昌志, 坂下満男, 田岡紀之, 中塚理, 財満鎭明

    応用物理学会SC東海地区学術講演会2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  282. Ge1-x-ySnxCy 混晶薄膜のエピタキシャル成長および結晶構造評価

    寺澤謙吾, 山羽隆, 小田裕貴, 黒澤昌志, 田岡紀之, 中塚理, 財満鎭明

    応用物理学会SC東海地区学術講演会2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  283. Ge1-x-ySixSny/n-Ge(001)低欠陥ヘテロ接合形成と電気的特性

    朝羽俊介, 山羽隆, 寺島辰也, 黒澤昌志, 坂下満男, 田岡紀之, 中塚理, 財満鎭明

    応用物理学会SC東海地区学術講演会2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  284. Ge1-xSnx エピタキシャル層の結晶性が発光特性に及ぼす影響

    保崎航也,小山剛史,黒澤昌志,田岡紀之,中塚理,岸田英夫,財満鎭明

    応用物理学会SC東海地区学術講演会2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  285. GeSiSn/n-Ge(001)ヘテロ接合型太陽電池の作製および光電特性評価

    朝羽俊介, 山羽隆, 寺島辰也, 黒澤昌志, 坂下満男, 田岡紀之, 中塚理, 財満鎭明

    第5回薄膜太陽電池セミナー2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  286. 多接合型太陽電池応用に向けたGe1-x-ySnxCy三元混晶薄膜の結晶成長

    寺澤謙吾, 山羽隆, 黒澤昌志, 田岡紀之, 中塚理, 財満鎭明

    第5回薄膜太陽電池セミナー2013 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  287. Ge1-x-ySnxCy三元混晶薄膜の結晶成長および結晶構造評価

    寺澤謙吾, 山羽隆, 小田裕貴, 黒澤昌志, 田岡紀之, 中塚理, 財満鎭明

    2013年応用物理学会結晶工学分科会 第2回結晶工学未来塾 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  288. Ge(001)基板上に成長した Ge1-xSnx エピタキシャル層の結晶構造および光学特性

    保崎航也,小山剛史,黒澤昌志,田岡紀之,中塚理,岸田英夫,財満鎭明

    2013年応用物理学会結晶工学分科会 第2回結晶工学未来塾 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  289. Characterization of Local Strain Structures in Heteroepitaxial Ge1−xSnx/Ge Microstructures by using Microdiffraction Method International conference

    S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

    224th Electrochemical Society (ECS) Meeting  

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  290. Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunitiesi International conference

    O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, and S. Zaima

    224th Electrochemical Society (ECS) Meeting  

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  291. Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible Electronics International conference

    T. Sadoh, J.-H. Park, M. Kurosawa, and M. Miyao

    224th Electrochemical Society (ECS) Meeting  

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  292. Engineering of Energy Band Structure with Epitaxial Ge1-x- ySixSny/n-Ge Hetero Junctions for Solar Cell Applications International conference

    S. Asaba, T. Yamaha, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

    International Conference on Solid State Devices and Materials 2013 (SSDM2013) 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  293. Hybrid-Formation of Single- Crystalline Ge(Si, Sn)-on- Insulator Structures by Self- Organized Melting-Growth International conference

    M. Miyao, R. Matsumura, M. Kurosawa, K. Toko, and T. Sadoh

    International Conference on Solid State Devices and Materials 2013 (SSDM2013) 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  294. Large grain growth of poly-GeSn on insulator by pulsed laser annealing in water International conference

    M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima

    International Conference on Solid State Devices and Materials 2013 (SSDM2013) 

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    Event date: 2013.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  295. Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode International conference

    A. Suzuki, S. Asaba, J. Yokoi, O. Nakatsuka, M. Kurosawa, K. Kato, M. Sakashita, N. Taoka, and S. Zaima

    International Conference on Solid State Devices and Materials 2013 (SSDM2013) 

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    Event date: 2013.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  296. Sn/n型Geコンタクトにおけるショットキー障壁高さの低減

    鈴木陽洋,朝羽俊介,横井淳,中塚理,黒澤昌志,坂下満男,田岡紀之,財満鎭明

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  297. Sn導入による非晶質SiGe混晶薄膜の低温結晶化

    山羽隆,荒平貴光,黒澤昌志,田岡紀之,中塚理,財満鎭明

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  298. 過飽和状態制御による多結晶Si1-xSnx/絶縁膜の大粒径成長

    黒澤昌志,荒平貴光,山羽隆,田岡紀之,中塚理,財満鎭明

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  299. 高Sn組成Ge1-xSnxエピタキシャル層の光学特性

    保崎航也,小山剛史,黒澤昌志,田岡紀之,中塚理,岸田英夫,財満鎭明

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  300. GOI基板上に形成したGe1-xSnxエピタキシャル層の電気特性評価

    大村拓磨,浅野孝典,黒澤昌志,田岡紀之,坂下満男,中塚理,財満鎭明

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  301. Potential of GeSn and GeSiSn for Future Nanoelectronic Device Applications International conference

    S. Zaima, O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, and M. Sakashita

    JSPS Core-to Core Program Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  302. Influence of Ge Substrate Orientation on Crystalline Structures of Ge1−xSnx Epitaxial Layers International conference

    T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima

    8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8)  

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  303. Lateral Growth Enhancement of Poly-Ge1−xSnx on SiO2 using a Eutectic Reaction International conference

    M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima

    8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8)  

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  304. 3-Dimensionally-Graded SiGe-on-Insulator Stacked Structures by Successive Rapid-Melting Growth International conference

    Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko,T. Sadoh, and M. Miyao

    8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8)  

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  305. Formation and Characterization of Locally Strained Ge1−xSnx/Ge Microstructures International conference

    S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

    8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8)  

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  306. Coherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization International conference

    T. Sadoh, M. Kurosawa, K. Toko, and M. Miyao

    8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8)  

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  307. Dynamics Analysis of Rapid-Melting Growth using SiGe on Insulator International conference

    R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh, and M. Miyao

    8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8)  

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  308. Si1-xGex/絶縁膜(x:0~1)の金属触媒成長 ―成長低温化と結晶方位制御―

    佐道泰造, パク・ジョンヒョク, 黒澤昌志, 都甲薫, 宮尾正信

    2013年(平成25年) 第60回応用物理学会 春季学術講演会  

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  309. SiGeミキシング誘起溶融成長法における成長速度の解析―電気的特性の横方向分布との相関―

    松村亮,東條友樹,黒澤昌志,佐道泰造,宮尾正信

    2013年(平成25年) 第60回応用物理学会 春季学術講演会  

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  310. 水中レーザーアニール法による多結晶Ge1-xSnx薄膜の低温形成

    黒澤昌志, 田岡紀之, 中塚理, 池上浩, 財満鎭明

    2013年(平成25年) 第60回応用物理学会 春季学術講演会  

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  311. Ge1-x-ySixSny エピタキシャル層/n-Ge(001)ヘテロ接合の電気的特性

    朝羽俊介,山羽隆,黒澤昌志,坂下満男,田岡紀之,中塚理,財満鎭明

    2013年(平成25年) 第60回応用物理学会 春季学術講演会  

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  312. Ge1-xSnxヘテロエピタキシャル成長に与える基板面方位効果

    黒澤昌志, 木戸脇翔平,浅野孝典, 田岡紀之, 中塚理,財満鎭明

    2013年(平成25年) 第60回応用物理学会 春季学術講演会  

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  313. Ge1-xSnxヘテロエピタキシャル成長に与えるSn導入効果

    木戸脇翔平,浅野孝典, 黒澤昌志, 田岡紀之, 中塚理,財満鎭明

    2013年(平成25年) 第60回応用物理学会 春季学術講演会  

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  314. Ge1−xSnx/Ge微細構造による局所歪構造の形成と評価

    池進一, 守山佳彦, 黒澤昌志, 田岡紀之, 中塚理, 今井康彦, 木村滋, 手塚勉, 財満鎭明

    2013年(平成25年) 第60回応用物理学会 春季学術講演会  

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  315. 圧縮歪Ge1-xSnxエピタキシャル層の電気伝導特性

    浅野孝典,黒澤昌志,田岡紀之,坂下満男,中塚理,財満鎭明

    2013年(平成25年) 第60回応用物理学会 春季学術講演会  

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  316. Crystalline Properties of Ge1-xSnx Epitaxial Layers on Ge(110) International conference

    T. Asano, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date: 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  317. Feasibility of Ge Device Fabrication by Low Temperature Processes on ULSI Circuits International conference

    N. Taoka, M. Kurosawa, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date: 2013.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  318. Low temperature crystallization of group-IV semiconductors induced by eutectic metals (Al, Sn) International conference

    M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date: 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  319. Sn誘起横方向成長法によるGe1-xSnx/SiO2構造の低温形成

    黒澤昌志,田岡紀之,坂下満男,中塚理,宮尾正信,財満鎭明

    第12回 日本表面科学会中部支部 学術講演会 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  320. 次世代フレキシブルデバイス実現に向けた絶縁膜上GeSn薄膜の低温結晶成長

    黒澤昌志,田岡紀之,坂下満男,中塚理,宮尾正信,財満鎭明

    2012年応用物理学会結晶工学分科会 第1回結晶工学未来塾 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  321. Formation of large-grain Ge(111) films on insulator by gold-induced layer-exchange crystallization at low temperature International conference

    J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh

    222th Electrochemical Society (ECS) Meeting 

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    Event date: 2012.10

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  322. Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting- Growth International conference

    R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao

    222th Electrochemical Society (ECS) Meeting 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  323. Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process International conference

    R. Kato, M. Kurosawa, R. Matsumura, T. Sadoh, and M. Miyao

    222th Electrochemical Society (ECS) Meeting 

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    Event date: 2012.10

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  324. Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal --- International conference

    M. Miyao, M. Kurosawa, K. Toko, and T. Sadoh

    222th Electrochemical Society (ECS) Meeting 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  325. Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth International conference

    R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, M. Miyao

    International Conference on Solid State Devices and Materials 2012 (SSDM2012) 

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    Event date: 2012.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  326. Temperature dependent Al-induced crystallization of amorphous Ge thin films on glass substrates International conference

    K. Toko, M. Kurosawa, N. Fukata, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao, and T. Suemasu

    International Conference on Solid State Devices and Materials 2012 (SSDM2012) 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  327. High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization International conference

    W. Takeuchi,N. Taoka, M. Kurosawa, M. Fukutome, M. Sakashita, O. Nakatsuka, S. Zaima

    International Conference on Solid State Devices and Materials 2012 (SSDM2012) 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  328. Si Segregation Behavior in Giant SiGe Stripes on Insulator during Rapid-Melting-Growth International conference

    R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao

    IUMRS Intarnational Conference on Electronic Materials (IUMRS-CEM2012) 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  329. Stripe-Length Dependent Laterally Graded SiGe Profiles by Rapid-Melting-Growth International conference

    R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao

    E-MRS 2012 Fall Meeting 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  330. Defect Free Multi-Structures of [SiGe/Insulator]2 on Si (100) platform International conference

    Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao

    E-MRS 2012 Fall Meeting 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  331. Al誘起成長法によるGe薄膜/ガラスの(111)面方位制御

    都甲薫,黒澤昌志,深田直樹,齋藤徳之,吉澤徳子,宇佐美徳隆,宮尾正信,末益崇

    2012年秋季 第73回応用物理学会学術講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  332. Sn触媒を用いた非晶質Ge薄膜/絶縁膜の低温成長

    黒澤昌志,田岡紀之,坂下満男,中塚理,宮尾正信,財満鎭明

    2012年秋季 第73回応用物理学会学術講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  333. 低温固相結晶化による高移動度poly-GeSn層の形成

    竹内和歌奈,田岡紀之,黒澤昌志,福留誉司,坂下満男,中塚理,財満鎭明

    2012年秋季 第73回応用物理学会学術講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  334. 大粒径SiGe結晶/絶縁膜のシードレス溶融成長

    加藤立奨,黒澤昌志,松村亮,東條友樹,佐道泰造,宮尾正信

    2012年秋季 第73回応用物理学会学術講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  335. SiGe溶融成長によるSGOI構造の濃度制御 -Si濃度分布に与える冷却速度効果-

    松村亮,東條友樹,横山裕之,黒澤昌志,佐道泰造,宮尾正信

    2012年秋季 第73回応用物理学会学術講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  336. (111)-Oriented Large-Grain Ge on Insulator by Gold-Induced Crystallization Combined with Interfacial Layer Insertion International conference

    J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh

    International Workshop on Active-Matrix Flatpanel Displays 2012 (AM-FPD'12) 

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    Event date: 2012.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  337. Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth International conference

    Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao

    2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012) 

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    Event date: 2012.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  338. 界面酸化膜挿入型 Au 誘起層交換成長法による大粒径 Ge(111)/絶縁膜の低温成長 -界面酸化膜厚依存性-

    鈴木恒晴, パク・ジョンヒョク, 黒澤昌志, 宮尾正信, 佐道泰造

    電子情報通信学会 シリコン材料・デバイス(SDM)研究会  

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    Event date: 2012.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  339. 絶縁膜上におけるGe(Si)薄膜の溶融成長 〜Si偏析効果による大粒径化〜

    加藤立奨,黒澤昌志,横山裕之,佐道泰造,宮尾正信

    電子情報通信学会 シリコン材料・デバイス(SDM)研究会  

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    Event date: 2012.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  340. Au誘起層交換成長法による大粒径Ge(111)結晶/絶縁膜の形成: 界面酸化膜挿入効果

    パク・ジョンヒョク,鈴木恒晴,黒澤昌志,宮尾正信,佐道泰造

    2012年(平成24年)春季 第59回応用物理学関係連合講演会  

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  341. 溶融成長法による面方位ハイブリッドGOI構造の創製 〜Si基板上へのGe(100), (110), (111)混載〜

    黒澤昌志, 佐道泰造, 宮尾正信 

    2012年(平成24年)春季 第59回応用物理学関係連合講演会  

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  342. 溶融横方向成長による傾斜構造GeSn/絶縁膜の形成

    黒澤昌志, 東條友樹, 松村亮, 宮尾正信 

    2012年(平成24年)春季 第59回応用物理学関係連合講演会  

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  343. 溶融GOIの成長フロント衝突領域におけるコヒーレント格子整合

    佐道泰造, 黒澤昌志, 加藤立奨, 東條友樹, 大田康晴, 都甲薫, 宮尾正信

    2012年(平成24年)春季 第59回応用物理学関係連合講演会  

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  344. 全率固溶型SiGe混晶におけるシードレス溶融成長

    加藤立奨,黒澤昌志,横山裕之,佐道泰造,宮尾正信

    2012年(平成24年)春季 第59回応用物理学関係連合講演会  

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  345. 溶融成長法によるSGOI(SiGe on Insulator)多段構造の形成 -Ge/SiO2/SiGe/SiN/Si(100)構造-

    東條友樹,横山裕之,松村亮,黒澤昌志,佐道泰造,宮尾正信

    2012年(平成24年)春季 第59回応用物理学関係連合講演会  

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  346. レーザーアニール法によるGOI(Ge on Insulator)構造の形成

    横山裕之,東條友樹,黒澤昌志,佐道泰造,部家彰,松尾直人,宮尾正信

    2012年(平成24年)春季 第59回応用物理学関係連合講演会  

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  347. SiGeミキシング誘起溶融法における成長流の可視化 -SiGe偏析の活用-

    東條友樹,松村亮,横山裕之,黒澤昌志,佐道泰造,宮尾正信

    2012年(平成24年)春季 第59回応用物理学関係連合講演会  

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  348. 溶融 SiGe成長による濃度傾斜型SGOI構造の形成 ―成長速度と偏析現象―

    松村亮,東條友樹,横山裕之,黒澤昌志,佐道泰造,宮尾正信

    2012年(平成24年)春季 第59回応用物理学関係連合講演会  

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  349. Orientation-controlled SiGe on insulator for system on panel International conference

    M. Kurosawa, T. Sadoh, and M. Miyao 

    International Thin-Film Transistor Conference 2012 (ITC'12) 

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    Event date: 2012.1

    Language:English   Presentation type:Poster presentation  

    Country:Portugal  

  350. 界面変調型Au誘起層交換法による大粒径Ge結晶/絶縁膜の方位制御成長

    鈴木恒晴, パク・ジョンヒョク, 黒澤昌志, 宮尾正信, 佐道泰造

    平成23年度 応用物理学会九州支部学術講演会 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  351. Catalytic-growth of Si-based thin-films for advanced semiconductor devices International conference

    M. Kurosawa, T. Sadoh, and M. Miyao 

    Taiwan Association for Coatings and Thin Films Technology 2011 (TACT2011) 

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    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Taiwan, Province of China  

  352. Orientation-Controlled Large-Grain Ge on Insulator by Au-Induced Layer-Exchange crystallization with Al2O3 Interfacial Layers International conference

    T. Suzuki, J.-H. Park, M. Kurosawa, M. Miyao, and T. Sadoh 

    15th International Conference on Thin Films (ICTF-15) 

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    Event date: 2011.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  353. Hybrid-Formation of (100), (110), and (111) Ge-on-Insulator Structures on (100) Si Platform International conference

    M. Kurosawa, T. Sadoh, and M. Miyao 

    International Conference on Solid State Devices and Materials 2011 (SSDM2011) 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  354. 溶融SiGeの偏析成長による濃度傾斜型SGOI構造の形成

    松村亮,東條友樹,横山裕之,黒澤昌志,佐道泰造,宮尾正信

    2011年秋季 第72回応用物理学会学術講演会 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  355. 溶融GOI層の非直線成長とひずみ発生

    加藤立奨,黒澤昌志,横山裕之,東條友樹,佐道泰造,宮尾正信

    2011年秋季 第72回応用物理学会学術講演会 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  356. SiGeミキシング誘起溶融成長法による網目状GOI層のコヒーレント成長

    東條友樹,横山裕之,加藤立奨,黒澤昌志,都甲薫,佐道泰造,宮尾正信

    2011年秋季 第72回応用物理学会学術講演会 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  357. Low temperature (~250oC) Layer Exchange Crystallization of Si1-xGex (x=0-1) on insulator for Advanced Flexible Devices International conference

    J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh 

    7th International Conference on Silicon Epitaxy and Heterostructures (ICSI-7)  

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    Event date: 2011.8 - 2011.9

    Language:English   Presentation type:Poster presentation  

    Country:Belgium  

  358. Single-crystalline (110)-oriented Ge strips on insulating substrates by SiGe-mixing triggered rapid-melting-growth from artificial Si-micro-seeds International conference

    M. Kurosawa, N. Kawabata, R. Kato, T. Sadoh, and M. Miyao 

    7th International Conference on Silicon Epitaxy and Heterostructures (ICSI-7)  

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    Event date: 2011.8 - 2011.9

    Language:English   Presentation type:Poster presentation  

    Country:Belgium  

  359. Enhancement of SiN-Induced Compressive and Tensile Strains in Si-Pillars by Modulation of SiN Network Structures International conference

    T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, M. Miyao

    7th International Conference on Silicon Epitaxy and Heterostructures (ICSI-7)  

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    Event date: 2011.8 - 2011.9

    Language:English   Presentation type:Poster presentation  

    Country:Belgium  

  360. Low temperature (~250oC) crystallization of poly-SiGe films by gold-induced layer-exchange technique for flexible electronics International conference

    J.-H. Park, M. Kurosawa, M. Miyao, and T. Sadoh 

    2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2011) 

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    Event date: 2011.6 - 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  361. Low-temperature formation of (111)Si1-xGex (0<x<1) on insulator by Al-induced crystallization International conference

    M. Kurosawa, T. Sadoh, and M. Miyao 

    2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2011) 

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    Event date: 2011.6 - 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  362. Au-catalyst induced low temperature (~250C) layer exchange crystallization for SiGe on insulator  International conference

    J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh 

    219th Electrochemical Society (ECS) Meeting  

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    Event date: 2011.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  363. Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization  International conference

    M. Kurosawa, N. Kawabata, R. Kato, T. Sadoh, and M. Miyao 

    219th Electrochemical Society (ECS) Meeting  

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    Event date: 2011.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  364. AIC初期過程におけるSi0.5Ge0.5薄膜の微細構造解析

    犬塚純平,光原昌寿,板倉賢,西田稔,黒澤昌志,佐道泰造,宮尾正信

    2011年(平成23年)春季 第58回応用物理学関係連合講演会  

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  365. SiGeミキシング誘起溶融成長法で形成したGOI細線のひずみ評価

    加藤立奨, 黒澤昌志, 都甲薫, 佐道泰造, 宮尾正信 

    2011年(平成23年)春季 第58回応用物理学関係連合講演会  

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  366. 金属誘起反応を用いたSi1-xGex/絶縁膜(x:0~1)の低温結晶成長

    佐道泰造, 黒澤昌志, 川畑直之, パク・ジョンヒョク, 都甲薫, 宮尾正信 

    2011年(平成23年)春季 第58回応用物理学関係連合講演会  

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  367. エキシマレーザアニールによるSiN誘起ローカル歪みの増強

    佐道泰造, 黒澤昌志, 部家彰, 松尾直人, 宮尾正信

    2011年(平成23年)春季 第58回応用物理学関係連合講演会  

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    Event date: 2011.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  368. 次世代フレキシブルデバイスの為の多結晶Si1-xGex(x=0-1)/絶縁膜の極低温層交換成長(~250oC)

    パク・ジョンヒョク, 黒澤昌志, 川畑直之, 宮尾正信, 佐道泰造

    2011年(平成23年)春季 第58回応用物理学関係連合講演会  

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    Event date: 2011.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  369. SiGeミキシング誘起溶融成長法とMILC法の重畳による人工単結晶GOI(110)の創製

    黒澤昌志, 川畑直之, 加藤立奨, 佐道泰造, 宮尾正信 

    2011年(平成23年)春季 第58回応用物理学関係連合講演会  

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  370. 偏光ラマン分光法によるIV族半導体のひずみ評価〜1軸・2軸ひずみの分離とその応用〜

    黒澤昌志, 佐道泰造, 宮尾正信 

    2011年(平成23年)春季 第58回応用物理学関係連合講演会  

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  371. Si1-xGex (0<x<1) oriented-growth on transparent-insulating-substrates by Al-induced layer-exchange crystallization  International conference

    M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao 

    International Thin-Film Transistor Conference 2011 (ITC'11)  

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:United Kingdom  

  372. Gold-Induced Crystallization of Si at Low-Temperature (<250C) for Flexible Electronics  International conference

    J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh 

    International Conference on Enabling Science and Nanotechnology (ESciNano 2010)  

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    Event date: 2010.12

    Language:English   Presentation type:Poster presentation  

    Country:Malaysia  

  373. Al誘起結晶化初期過程におけるSiGe薄膜の微細構造解析 

    犬塚純平, 光原昌寿, 板倉賢, 西田稔, 池田賢一, 黒澤昌志, 佐道泰造, 宮尾正信 

    平成22年度 応用物理学会九州支部学術講演会  

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  374. フレキシブルデバイス実現に向けたSi及びGe結晶/絶縁膜の極低温成長(~250℃) 

    パク・ジョンヒョク, 黒澤昌志, 川畑直之, 宮尾正信, 佐道泰造 

    平成22年度 応用物理学会九州支部学術講演会  

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  375. Low-temperature (<250C) crystallization of Si on insulating substrate by gold-induced layer-exchange technique  International conference

    J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh 

    IEEE Region 10 International Conference 2010 (TENCON2010)  

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    Event date: 2010.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  376. Layer-Exchange-Induced Low-temperature crystallization (<250oC) of Si on insulator International conference

    J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh 

    The 4th International Workshop on Electrical Engineering  

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  377. High-mobility Defect-free Ge Single-crystals by Rapid Melting Growth on Insulating Substrates International conference

    M. Miyao, K. Toko, M. Kurosawa, T. Tanaka, T. Sakane, Y. Ohta, N. Kawabata, H. Yokoyama, and T. Sadoh 

    International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)  

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:China  

  378. Au誘起層交換成長法によるGe結晶/絶縁膜の極低温形成(~250℃) 

    パク・ジョンヒョク, 黒澤昌志, 川畑直之, 宮尾正信, 佐道泰造 

    平成22年度(第63回) 電気関係学会九州支部連合大会  

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  379. Single-Crystalline (100) Ge Stripes with High-Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds  International conference

    K. Toko, H. Yokoyama, M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao 

    International Conference on Solid State Devices and Materials 2010 (SSDM 2010)  

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    Event date: 2010.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  380. Uniaxial and Biaxial Strain Distribution Mapping in SOI Micro-Structures by Polarized Raman Spectroscopy  International conference

    M. Kurosawa, T. Sadoh, and M. Miyao 

    International Conference on Solid State Devices and Materials 2010 (SSDM 2010)  

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    Event date: 2010.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  381. Defect-Free GOI (Ge on Insulator) by SiGe Mixing-Triggered Liquid-Phase Epitaxy International conference

    M. Miyao, K. Toko, M. Kurosawa, and T. Sadoh 

    International Conference on Solid State Devices and Materials 2010 (SSDM 2010)  

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    Event date: 2010.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  382. Au誘起層交換成長法による多結晶Si/絶縁膜の極低温形成(~250℃) 

    パク・ジョンヒョク, 黒澤昌志, 川畑直之, 宮尾正信, 佐道泰造 

    2010年秋季 第71回応用物理学会学術講演会  

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  383. 偏光ラマン分光法による局所ひずみ軸のダイレクト評価

    黒澤昌志, 佐道泰造, 宮尾正信 

    2010年秋季 第71回応用物理学会学術講演会  

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  384. Al誘起層交換法によるSiGe結晶の配向成長機構 

    川畑直之, 黒澤昌志, パク・ジョンヒョク, 佐道泰造, 宮尾正信 

    2010年秋季 第71回応用物理学会学術講演会  

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  385. SiGe Mixing-Triggered Melting-Growth for Orientation-Controlled Ge on Transparent Insulating Substrates  International conference

    K. Toko, T. Tanaka, H. Yokoyama, M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao 

    International SiGe Technology and Device Meeting 2010 (ISTDM'10)  

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    Event date: 2010.5

    Language:English   Presentation type:Poster presentation  

    Country:Sweden  

  386. Al-Induced Oriented-Crystallization of Si Films on Quartz and Its Application to Epitaxial-Template for Ge Growth  International conference

    M. Kurosawa, N. Kawabata, K. Toko, T. Sadoh, and M. Miyao 

    International SiGe Technology and Device Meeting 2010 (ISTDM'10)  

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    Event date: 2010.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Sweden  

  387. ガラス上におけるSiGe薄膜のアルミニウム誘起結晶化とその成長メカニズム 

    川畑直之, 黒澤昌志, 佐道泰造, 宮尾正信 

    電子情報通信学会 シリコン材料・デバイス(SDM)研究会  

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    Event date: 2010.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  388. 人工単結晶核を用いたSiGeミキシング誘起溶融成長法 ―GOI (Ge on Insulator)の方位制御― 

    横山裕之, 川畑直之, 坂根尭, 大田康晴, 田中貴規, 黒澤昌志, 都甲薫, 佐道泰造, 宮尾正信 

    2010年春季 第57回応用物理学関係連合講演会  

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  389. 絶縁膜上におけるSi単結晶粒の方位制御とSiGeミキシング誘起横方向Geエピタキシャル成長 

    黒澤昌志, 川畑直之, 都甲薫, 佐道泰造, 宮尾正信 

    2010年春季 第57回応用物理学関係連合講演会  

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  390. Al誘起結晶化Si0.5Ge0.5薄膜の微細構造解析 

    犬塚純平, 板倉賢, 西田稔, 黒澤昌志, 佐道泰造, 宮尾正信 

    2010年春季 第57回応用物理学関係連合講演会  

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  391. Al誘起層交換成長法により形成したSiGe/絶縁膜の配向性制御 

    川畑直之, 黒澤昌志, 佐道泰造, 宮尾正信 

    2010年春季 第57回応用物理学関係連合講演会  

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  392. SiGeミキシング誘起溶融成長法による無欠陥/高移動度GOI (Ge on Insulator)の形成 

    都甲薫, 田中貴規, 大田康晴, 坂根尭, 横山裕之, 黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信 

    2010年春季 第57回応用物理学関係連合講演会  

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  393. SiGe Mixing-Triggered Liquid-Phase Epitaxy for Defect-Free GOI (Ge on Insulator) International conference

    K. Toko, M. Kurosawa, T. Tanaka, T. Sadoh, and M. Miyao 

    5th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date: 2010.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  394. Interfacial Oxide Layer Controlled Al-Induced Crystallization of Si on Insulator for Epitaxial Template  International conference

    M. Kurosawa, N. Kawabata, K. Toko, T. Sadoh, and M. Miyao 

    5th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date: 2010.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  395. Orientation-controlled poly-SiGe on insulator by Aluminum-induced crystallization  International conference

    M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao 

    International Thin-Film Transistor Conference 2010 (ITC'10)  

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    Event date: 2010.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  396. High mobility of single-crystalline Ge stripes on insulator by SiGe mixing triggered liquid-phase epitaxy  International conference

    K. Toko, H. Yokoyama, M. Kurosawa, N. Kawabata, T. Tanaka, T. Sadoh, and M. Miyao 

    2009 Materials Research Society Fall Meeting  

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    Event date: 2009.11 - 2009.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  397. Orientation-Controlled poly-Si on glass by Al-induced layer exchange technique  International conference

    M. Kurosawa, N. Kawabata, H. Yokoyama, Y. Ohta, K. Toko, T. Sadoh, and M. Miyao 

    2009 Materials Research Society Fall Meeting  

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    Event date: 2009.11 - 2009.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  398. Orientation Control of Large Grain Poly-Si on Glass by Interfacial Oxide Layer Controlled Al-Induced Crystallization  International conference

    M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao 

    International Conference on Solid State Devices and Materials 2009 (SSDM 2009)  

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    Event date: 2009.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  399. Al誘起層交換法による高配向Si薄膜/ガラスの低温形成

    川畑直之, 黒澤昌志, 佐道泰造, 宮尾正信 

    第17回 電子情報通信学会九州支部 学生会講演会  

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    Event date: 2009.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  400. Al-Induced Low Temperature Crystallization of Si1-xGex (0<x<1) by Interfacial Al Oxide Layer Control  International conference

    M. Kurosawa, T. Sadoh, and M. Miyao 

    6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6)  

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    Event date: 2009.5

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  401. アルミニウム誘起層交換法によるSiGe/ガラスの低温成長 

    黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信 

    電子情報通信学会 シリコン材料・デバイス(SDM)研究会  

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    Event date: 2009.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  402. 金属触媒誘起横方向成長法による多結晶Geの極低温成長 

    佐道泰造, 萩原貴嗣, 黒澤昌志, 都甲薫, 権丈淳 

    2009年春季 第56回応用物理学関係連合講演会  

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    Event date: 2009.3 - 2009.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  403. 界面酸化膜制御によるSi1-xGex (0≦x≦1)混晶のAl誘起層交換成長 

    黒澤昌志, 佐道泰造, 宮尾正信 

    2009年春季 第56回応用物理学関係連合講演会  

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    Event date: 2009.3 - 2009.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  404. Si/Ge多層構造のAl誘起層交換成長とSi-Geミキシング 

    黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信 

    2009年春季 第56回応用物理学関係連合講演会  

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    Event date: 2009.3 - 2009.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  405. AIC法で作製したSi0.5Ge0.5薄膜の微細構造解析 

    犬塚純平, 板倉賢, 西田稔, 黒澤昌志, 佐道泰造, 宮尾正信 

    2009年春季 第56回応用物理学関係連合講演会  

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    Event date: 2009.3 - 2009.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  406. UV照射アニールによるSiN誘起ローカル歪みの増強 

    田中貴規, 田中政典, 黒澤昌志, 佐道泰造, 宮尾正信, 山口真典, 鈴木信二, 北村徳秀 

    2009年春季 第56回応用物理学関係連合講演会  

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    Event date: 2009.3 - 2009.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  407. AIC法により作製したSiGe薄膜の微細構造評価 

    犬塚純平, 板倉賢, 西田稔, 黒澤昌志, 佐道泰造, 宮尾正信 

    第50回日本顕微鏡学会 九州支部総会・学術講演会  

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    Event date: 2008.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  408. Si/Ge多層構造に於けるAl誘起層交換成長とSi/Ge相互拡散 

    黒澤昌志, 佐道泰造, 宮尾正信 

    2008年(平成20年)秋季 第69回応用物理学会学術講演会  

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    Event date: 2008.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  409. Interfacial-Oxide Controlled Al-Induced Crystallization of Si1-xGex (x: 0-1) on Insulating Substrate International conference

    M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao

    International Workshop on Active-Matrix Flatpanel Displays and Devices 2008 (AM-FPD'08)  

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    Event date: 2008.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  410. Low-Temperature (111)-Oriented SiGe Growth on Insulating Substrate by Al-Induced Crystallization International conference

    T. Sadoh, Y. Tsumura, M. Kurosawa, and M. Miyao

    International SiGe Technology and Device Meeting 2008 (ISTDM'08)  

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    Event date: 2008.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Taiwan, Province of China  

  411. MgO/Si構造上における非晶質Geの固相成長

    榎本雄志, 黒澤昌志, 松本達也, 上田公二, 佐道泰造, 宮尾正信 

    2008年(平成20年)春季 第55回応用物理学関係連合講演会  

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    Event date: 2008.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  412. SiGeのAl誘起層交換成長に与える界面酸化膜効果

    黒澤昌志, 津村宜孝, 佐道泰造, 宮尾正信 

    2008年(平成20年)春季 第55回応用物理学関係連合講演会  

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    Event date: 2008.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  413. Ge Fraction Dependence of Al-induced Crystallization of SiGe at Low-Temperature International conference

    M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao

    International Thin-Film Transistor Conference 2008 (ITC'08)  

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    Event date: 2008.1

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  414. Orientation Control of CoPt Thin Film by MgO Template  International conference

    T. Matsumoto, M. Kurosawa, K. Ueda, T. Sadoh, and M. Miyao

    International WorkShop on New Group IV Semiconductor Nanoelectronics 2007 

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    Event date: 2007.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  415. Si(100)基板上に於けるMgO薄膜の結晶化 

    黒澤昌志, 松本達也, 上田公二, 権丈淳, 佐道泰造, 宮尾正信 

    2007年(平成19年)秋季 第68回応用物理学会学術講演会  

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    Event date: 2007.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  416. [CoPt/MgO]n薄膜多層構造に於けるCoPt配向機構の検討 

    松本達也, 黒澤昌志, 上田公二, 佐道泰造, 宮尾正信 

    2007年(平成19年)秋季 第68回応用物理学会学術講演会  

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    Event date: 2007.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  417. 非晶質Ge薄膜の金属誘起横方向成長に於ける触媒種効果(Ni, Co, Cu, Pd) 

    萩原貴嗣,黒澤昌志, 菅野裕士, 権丈淳, 佐道泰造, 宮尾正信 

    2007年(平成19年)春季 第54回応用物理学関係連合講演会  

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    Event date: 2007.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  418. 水晶振動子膜厚計の製作とその評価

    黒澤昌志, 若松孝

    平成16年度電子情報通信学会東京支部学生会研究発表会 

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    Event date: 2005.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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Research Project for Joint Research, Competitive Funding, etc. 17

  1. 表面修飾で色が変わる14族ポストグラフェンの開発と環境発電への応用

    2021.12 - 2023.3

    令和3年度 東海国立大学機構大学横断研究推進プロジェクト 

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    Authorship:Principal investigator  Grant type:Competitive

  2. ゲルマニウムスズ薄膜のフォノンドラッグ熱電能に関する研究

    2021.4 - 2022.3

    東京工業大学科学技術創成研究院フロンティア材料研究所 共同利用研究(一般B) 

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    Authorship:Principal investigator  Grant type:Competitive

  3. 再考:絶縁膜上の固相成長 〜極薄ゲルマニウム層の移動度はなぜ低いのか?〜

    2020.6 - 2021.3

    2020年度 キオクシア奨励研究 

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    Authorship:Principal investigator  Grant type:Competitive

  4. インターカレーションを駆使したゲルマニウムナノシートの電子物性制御

    2019.8 - 2022.7

    第27回 立松財団研究助成(区分:A2. 基礎工学研究助成) 

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    Authorship:Principal investigator  Grant type:Competitive

  5. 再考:絶縁膜上の固相成長 〜極薄ゲルマニウム層の移動度はなぜ低いのか?〜

    2019.7 - 2020.3

    2019年度 キオクシア(旧 東芝メモリ)奨励研究 

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    Authorship:Principal investigator  Grant type:Competitive

  6. プレーナ型スケーラブル熱電発電機構の実証と展開 (分担)

    Grant number:JPMJCR19Q5  2019.4 - 2023.3

    戦略的創造研究推進事業 CREST (ステップアップ) 

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  7. Crystal growth of group-IV alloys and its applications

    2018.6 - 2018.7

    池谷科学技術振興財団 研究者海外派遣助成 

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    Authorship:Principal investigator  Grant type:Competitive

  8. IV族元素による新奇二次元物質創生ユニット

    2018.4 - 2020.3

    名古屋大学 研究大学強化促進事業 若手新分野創成研究ユニット・フロンティア 

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    Authorship:Principal investigator  Grant type:Competitive

  9. ゲルマニウムスズ薄膜のフォノンドラッグ熱電能に関する研究

    2018.4 - 2019.3

    東京工業大学科学技術創成研究院フロンティア材料研究所 共同利用研究(一般B) 

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    Authorship:Principal investigator  Grant type:Competitive

  10. Synthesis of p- and n-type Ge1-xSnx thin films toward new group-IV thermoelectric materials

    2017.7 - 2017.8

    日本科学協会 平成29年度海外発表促進助成 

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    Authorship:Principal investigator  Grant type:Competitive

  11. IV族半導体混晶を用いた新規機能性材料およびデバイスの開発

    2016.8 - 2021.3

    大学間連携研究事業「学際・国際的高度人材育成ライフイノベーションマテリアル創製共同研究プロジェクト」(六研プロジェクト) 

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    Authorship:Principal investigator  Grant type:Competitive

  12. 革新的多機能センサモジュール実現に向けた新しいIV族混晶熱電物質の創製

    Grant number:JPMJPR15R2  2015.12 - 2019.3

    戦略的創造研究推進事業 さきがけ 

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    Authorship:Principal investigator  Grant type:Competitive

  13. IV族二次元結晶の成長メカニズム解明とスイッチング動作実証

    2015.7 - 2016.6

    第31回 公益財団法人 村田学術振興財団 研究助成 

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    Authorship:Principal investigator  Grant type:Competitive

  14. シリコン系量子閉じ込め構造を利用した近赤外光デバイスの開発

    2015.7 - 2016.3

    中部科学技術センター学術奨励研究助成 

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    Authorship:Principal investigator  Grant type:Competitive

  15. IV族元素による新奇二次元物質創生ユニット

    2015.4 - 2018.3

    名古屋大学 研究大学強化促進事業 若手新分野創成研究ユニット 

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    Authorship:Principal investigator  Grant type:Competitive

  16. サーモエレクトロニクスを志向したゲルマニウム錫ナノ構造体の開発

    2015.4 - 2016.2

    平成27年度 笹川科学研究助成 学術研究部門 

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    Authorship:Principal investigator  Grant type:Competitive

  17. 次世代フレキシブルディスプレイを目指したシリコンゲルマニウム錫/絶縁膜の高品質形成

    2014.4 - 2015.3

    池谷科学技術振興財団 単年度研究助成 

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    Authorship:Principal investigator  Grant type:Competitive

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KAKENHI (Grants-in-Aid for Scientific Research) 9

  1. IV族混晶バンドエンジニアリングを基軸とした巨大熱電能の制御とデバイス応用

    Grant number:21H01366  2021.4 - 2024.3

    科学研究費補助金  基盤研究(B)

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    Authorship:Principal investigator 

  2. IV族混晶結晶粒界で生じる特異なキャリア・フォノン散乱の機構解明と制御

    Grant number:20H05188  2020.4 - 2022.3

    科学研究費補助金  新学術領域研究(公募研究)

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    Authorship:Principal investigator 

  3. 直接遷移型シリコンスズ創出に向けたボンドエンジニアリング構築への挑戦

    Grant number:19K21971  2019.6 - 2021.3

    科学研究費補助金  挑戦的研究(萌芽)

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    Authorship:Principal investigator 

  4. フォノン・電子輸送制御したDirac電子超格子の創製とSi系熱電デバイス開発(分担)

    Grant number:19H00853  2019.4 - 2024.3

    科学研究費補助金  基盤研究(A)

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    Authorship:Coinvestigator(s) 

  5. ゲルマニウム系二次元ハニカム結晶の自己 組織化形成と結晶構造・電子状態制御(分担)

    Grant number:18K19020  2018.7 - 2020.3

    科学研究費補助金  挑戦的研究(萌芽)

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    Authorship:Coinvestigator(s) 

  6. 超高速・省エネ動作を目指したゲルマニウムスズ・ナノワイヤMOSFETの創製

    Grant number:17H04919  2017.4 - 2020.3

    科学研究費補助金  若手研究(A)

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    Authorship:Principal investigator 

  7. シリコン系二次元ハニカム結晶の創製と電子物性の解明(分担)

    Grant number:15K13943  2015.4 - 2017.3

    科学研究費補助金  挑戦的萌芽研究

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    Authorship:Coinvestigator(s) 

  8. 面方位混載型・歪みゲルマニウム超薄膜の創製と超高速トランジスタへの応用

    Grant number:12J04434  2012.4 - 2015.3

    科学研究費補助金  特別研究員奨励費

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    Authorship:Principal investigator 

  9. ガラス上における歪みシリコンゲルマニウム擬似単結晶の創製と薄膜デバイスの高速化

    Grant number:09J01769  2009.4 - 2012.3

    科学研究費補助金  特別研究員奨励費

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    Authorship:Principal investigator 

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Industrial property rights 4

  1. 半導体薄膜の形成方法

    黒澤昌志, 田岡紀之, 中塚理, 財満鎭明, 池上浩

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    Applicant:名古屋大学, 九州大学, ギガフォトン株式会社

    Application no:PCT/JP2014/054515  Date applied:2014.2

    Country of applicant:Foreign country  

  2. 半導体結晶の製造方法、半導体結晶および半導体デバイス

    黒澤昌志, 中塚理, 田岡紀之, 坂下満男, 財満鎭明

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    Applicant:名古屋大学

    Application no:特願2014-030660  Date applied:2014.2

    Country of applicant:Domestic  

  3. 半導体薄膜の形成方法

    黒澤昌志, 田岡紀之, 中塚理, 財満鎭明, 池上浩

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    Applicant:名古屋大学, 九州大学, ギガフォトン株式会社

    Application no:特願2013-042775  Date applied:2013.3

    Country of applicant:Domestic  

  4. 半導体結晶,その製造方法,及び多層膜構造体

    黒澤昌志, 田岡紀之, 坂下満男, 中塚理, 財満鎭明

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    Applicant:名古屋大学

    Application no:特願2013-024605  Date applied:2013.2

    Country of applicant:Domestic  

 

Teaching Experience (On-campus) 21

  1. 基礎セミナーA

    2021

  2. 物理工学序論

    2021

  3. 電磁気学Ⅰ

    2021

  4. 応用物性

    2021

  5. 基礎セミナーA

    2020

  6. 半導体物性工学特論

    2020

  7. 電磁気学Ⅰ

    2020

  8. 応用物性

    2020

  9. 工場見学

    2019

  10. 物性物理学第4

    2019

  11. 電磁気学Ⅰ

    2019

  12. 物性物理学第4

    2018

  13. 電磁気学Ⅰ

    2018

  14. 半導体物性工学特論

    2018

  15. 半導体デバイス工学特論

    2017

  16. 物理工学序論

    2017

  17. 電磁気学Ⅰ

    2017

  18. 物性物理学第4

    2017

  19. 物性物理学第4

    2016

  20. 物性物理学第4

    2015

  21. 半導体デバイス工学特論

    2015

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Teaching Experience (Off-campus) 12

  1. 制御実験

    2011.4 - 2012.3 九州電気専門学校)

  2. パワーエレクトロニクス

    2011.4 - 2012.3 九州電気専門学校)

  3. 自動制御工学

    2011.4 - 2012.3 九州電気専門学校)

  4. 制御実験

    2010.4 - 2011.3 九州電気専門学校)

  5. パワーエレクトロニクス

    2010.4 - 2011.3 九州電気専門学校)

  6. 自動制御工学

    2010.4 - 2011.3 九州電気専門学校)

  7. パワーエレクトロニクス

    2009.4 - 2010.3 九州電気専門学校)

  8. 自動制御工学

    2009.4 - 2010.3 九州電気専門学校)

  9. 制御実験

    2009.4 - 2010.3 九州電気専門学校)

  10. パワーエレクトロニクス

    2008.4 - 2009.3 九州電気専門学校)

  11. 制御実験

    2008.4 - 2009.3 九州電気専門学校)

  12. 制御実験

    2007.4 - 2008.3 九州電気専門学校)

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Social Contribution 4

  1. 日本真空表面学会中部支部主催 第6回真空技術超入門講座

    Role(s):Lecturer

    2019.10

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    Audience: College students, Graduate students, Researchesrs, Company

    Type:Lecture

  2. 日本真空学会東海支部主催 第5回真空技術超入門講座

    Role(s):Lecturer

    2018.5

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    Audience: College students, Graduate students, Researchesrs, Company

    Type:Lecture

  3. 日本真空学会東海支部主催 第3回真空技術超入門講座

    Role(s):Lecturer

    2016.4

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    Audience: College students, Graduate students, Researchesrs, Company

    Type:Lecture

  4. 日本真空学会東海支部主催 第2回真空技術超入門講座

    Role(s):Lecturer

    2015.4

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    Audience: College students, Graduate students, Researchesrs, Company

    Type:Lecture