Designated Lecturer, Division of Materials Research, Institute of Materials and Systems for Sustainability, Nagoya University

2015.10 - 2016.12

Nagoya University   Institute for Advanced Research   Designated Lecturer

2015.5 - 2016.12

Designated Lecturer, EcoTopia Science Institute Division of Green Conversion, Nagoya University

2015.5 - 2015.9

Research Institution Researcher, EcoTopia Science Institute Division of Green Conversion, Nagoya University

2015.4

Nagoya University   Institute for Advanced Research   Researcher

2015.4

JSPS Research Fellow (PD)

2012.4 - 2015.3

JSPS Research Fellow (DC1)

2009.4 - 2012.3

ISCSI-IX   実行委員  

2022   

応用物理学会東海支部   庶務幹事補佐  

2021.4 - 2023.3   

応用物理学会 東海地区若手チャプター   副代表庶務、web担当  

2021.1 - 2021.12   

第82回応用物理学会秋季学術講演会   現地実行委員  

2021   

応用物理学会 東海地区若手チャプター   コアメンバー  

2018   

応用物理学会フォノンエンジニアリング研究会   実行委員  

2018   

2016年真空・表面科学合同講演会委員会   委員  

2016   

ISCSI-VII/ISTDM2016   実行委員  

2016   

文部科学省科学技術政策研究所科学技術動向研究センター   専門調査員  

2014.4 - 2015.3   

第６回応用物理学会シリコンテクノロジー分科会 研究奨励賞

2015.3   応用物理学会シリコンテクノロジー分科会  

第12回日本表面科学会中部支部研究会 講演奨励賞

2012.12   日本表面科学会中部支部  

2012年応用物理学会結晶工学分科会 分科会発表奨励賞

2012.11   応用物理学会結晶工学分科会  

第2回（平成23年度）九州大学大学院システム情報科学府優秀学生表彰

2012.3   九州大学大学院システム情報科学府同窓会  

第29回（2010年秋季）応用物理学会講演奨励賞

2010.3   応用物理学会  

第10回（2004年度）東京支部学生会講演奨励賞

2005.5   電子情報通信学会  

2004年度 精励賞(学業の部)

2005.3   茨城工業高等専門学校  

Ge1-xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 oC and in-situ Sb doping Reviewed

S. Shibayama, K. Takagi, M. Sakshita, M. Kurosawa, and O. Nakatsuka

Materials Science in Semiconductor Processing     page： Vol. 176, pp. 108302-1〜8   2024.3

Planar-type SiGe thermoelectric generator with double cavity structure Reviewed

S. Koike, R. Yanagisawa, L. Jalabert, R. Anufriev, M. Kurosawa, T. Mori, and M. Nomura

Applied Physics Letters     page： Vol. 124, Issue 12, pp. 123902-1〜6   2024.3

Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films Reviewed

T. Maeda, H. Ishii, W. H. Chang, S. Zhang, S. Shibayama, M. Kurosawa, and O. Nakatsuka

Materials Science in Semiconductor Processing     page： Vol. 176, pp. 108304-1〜7   2024.3

Effect of nanostructuring on thermoelectric performance of SiGe thin films Reviewed

S. Koike, R. Yanagisawa, M. Kurosawa, R. Jha, N. Tsujii, T. Mori, and M. Nomura

Japanese Journal of Applied Physics     page： Voi. 62, No. 9, pp. 095001-1〜4   2023.9

Self-organized Ge1−xSnx quantum dots formed on insulators and their room temperature photoluminescence Reviewed

K. Hashimoto, S. Shibayama, K. Asaka, M. Sakashita, M. Kurosawa, and O. Nakatsuka

Japanese Journal of Applied Physics     page： Vol. 62, No. 7, pp. 075506-1〜8   2023.7

Lattice-matched growth of a high-Sn-content (x~0.1) Si1-xSnx layers on Si1-yGey buffers using molecular beam epitaxy Reviewed

K. Fujimoto, M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka

Applied Physics Express     page： Vol. 16, No. 4, pp. 045501-1〜4   2023.4

Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing Reviewed

K. Okada, S. Shibayama, M. Sakashita, O. Nakatsuka, and M. Kurosawa

Materials Science in Semiconductor Processing     page： Vol. 161, pp. 107462-1〜6   2023.3

Preparation and thermoelectric characterization of boron-doped Si nanocrystals/silicon oxide multilayers Reviewed

K. Shibata, S. Kato, M. Kurosawa, K. Gotoh, S. Miyamoto, N. Usami , and Y. Kurokawa

Japanese Journal of Applied Physics     page： Vol. 62, No. SC, pp. SC1074-1〜8   2023.2

Superior Power Generation Capacity of GeSn over Si Demonstrated in Cavity-free Thermoelectric Device Architecture Reviewed

M. M. H. Mahfuz, K. Katayama, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe

Japanese Journal of Applied Physics     page： Vol. 62, No. SC, pp. SC1058-1〜6   2023.2

Investigation of Band Structure in Strained Single Crystalline Si1-xSnx Reviewed

K. Sahara, R. Yokogawa, Y. Shibayama, Y. Hibino, M. Kurosawa, and A. Ogura

ECS Transactions     page： Vol. 109, No. 4, pp. 359-366   2022.9

Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1−x−ySixSny epitaxial layers grown on GaAs(001) Reviewed

M. Kurosawa, M. Nakata, T. Zhan, M. Tomita, T. Watanabe, and O. Nakatsuka

Japanese Journal of Applied Physics     page： Vol. 61, No. SC, pp. SC1048-1〜6   2022.7

High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride Reviewed

K. Niwa, T. Iizuka, M. Kurosawa, Y. Nakamura, H. O. Valencia, H. Kishida, O. Nakatsuka, T. Sasaki, N. Gaida, and M. Hasegawa

AIP Advances     page： Vol. 12, Issue 5, pp.055318-1〜5   2022.5

Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators Reviewed

R. Oishi, K. Asaka, L. Bolotov, N. Uchida, M. Kurosawa, and O. Nakatsuka

Japanese Journal of Applied Physics     page： Vol. 61, No. SC, pp. SC1086-1～6   2022.4

Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments Reviewed

M. Itoh, M. Araidai, A. Ohta, O. Nakatsuka, and M. Kurosawa

Japanese Journal of Applied Physics     page： Vol. 61, No. SC, pp. SC1048-1〜6   2022.2

Constructed Ge quantum dots and Sn precipitate SiGeSn hybrid film with high thermoelectric performance at low temperature region Reviewed

Y. Peng, L. Miao, C. Liu, H. Song, M. Kurosawa, O. Nakatsuka, S. Y. Back, J. S. Rhyee, M. Murata, S. Tanemura, T. Baba, T. Baba, T. Ishizaki, and T. Mori

Advanced Energy Materials     page： Vol. 12, Issue 2, 2103191-1〜9   2021.11

Thermoelectric properties of tin-incorporated group-IV thin films Reviewed

M. Kurosawa and O. Nakatsuka

ECS Transactions     page： Vol. 104, No. 4, pp. 183-189   2021.10

Reinforcement of power factor in N-type multiphase thin film of Si1-x-yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity Reviewed

H. Lai, Y. Peng, J. Gao, H. Song, M. Kurosawa, O. Nakatsuka, T. Takeuchi, and L. Miao

Applied Physics Letters     page： Vol. 119, Issue 11, pp. 113903-1〜6   2021.9

Formation and Characterization of Ge1–x–YSixSny/Ge Hetero Junction Structures for Photovoltaic Cell Application Reviewed

O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima

ECS Transactions     page： Vol. 102, No. 4, pp. 3-9   2021.5

Close-spaced evaporation of CaGe2 films for scalable GeH film formation Reviewed

K. O. Hara, S. Kunieda, J. Yamanaka, K. Arimoto, M. Itoh, and M. Kurosawa

Materials Science in Semiconductor Processing     page： Vol. 132, pp. 105928-1〜6   2021.5

No external load measurement strategy for micro thermoelectric generator based on high-performance Si1-x-yGexSny film Reviewed

Y. Peng, S. Zhu, H. Lai, J. Gao, M. Kurosawa, O. Nakatsuka, S. Tanemura, B. Peng, and L. Miao

Journal of Materiomics     page： Vol. 7, Issue 4, pp. 665-671   2020.12

Silicon‐based low-dimensional materials for Thermal Conductivity Suppression: Recent Advances and New Strategies to High Thermoelectric Efficiency Reviewed

H. Lai, Y. Peng, J. Gao, M. Kurosawa, O. Nakatsuka, T. Takeuchi, and L. Miao

Japanese Journal of Applied Physics     page： Vol. 60, No. SA, pp. SA0803-1〜15   2020.10

Evaluation of Strain-Shift Coefficients for SiSn by Raman Spectroscopy Reviewed

R. Yokogawa, M. Kurosawa, and A. Ogura

ECS Transactions     page： Vol. 98, No. 5, pp. 291-300   2020.9

Hydrogen Desorption from Silicane and Germanane Crystals: Toward Creation of Free-Standing Monolayer Silicene and Germanene Reviewed

M. Araidai, M. Itoh, M. Kurosawa, A. Ohta, and K. Shiraishi

Journal of Applied Physics     page： Vol. 128, Issue 12, pp. 125301-1〜5   2020.9

Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Reviewed

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

ECS Transactions     page： Vol. 98, No. 5, pp. 149-156   2020.9

Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping Reviewed

Y. Peng, H. Lai, C. Liu, J. Gao, M. Kurosawa, O. Nakatsuka, T. Takeuchi, S. Zaima, S. Tanemura, and L. Miao

Applied Physics Letters     page： Vol. 117, Issue 5, pp. 053903-1〜5   2020.8

Design of a Planar-type Uni-leg SiGe Thermoelectric Generator Reviewed

S. Koike, R. Yanagisawa, M. Kurosawa, and M. Nomura

Japanese Journal of Applied Physics     page： Vol. 59, No. 7, pp. 074003-1〜5   2020.7

Continuous Growth of Germanene and Stanene Lateral Heterostructures Reviewed

T. Ogikubo, H. Shimazu, Y. Fujii, K. Ito, A. Ohta, M. Araidai, M. Kurosawa, G. L. Lay, J. Yuhara

Advanced Materials Interfaces     page： Vol. 7, No. 10, pp. 1902132-1〜7   2020.3

Preparation and thermoelectric characterization of phosphorus-doped Si nanocrystals/silicon oxide multilayers Reviewed

H. Kobayashi, R. Akaishi, S. Kato, M. Kurosawa, N. Usami, and Y. Kurokawa

Japanese Journal of Applied Physics     page： Vol. 59, No. SG, pp. SGGF09-1〜6   2020.2

Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface Reviewed

M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki

Japanese Journal of Applied Physics     page： Vol. 59, No. SG, pp. SGGK15-1〜6   2020.2

分子線エピタキシー法によるSi1-xSnx薄膜の形成

丹下龍志, 黒澤昌志, 中塚理

電子デバイス界面テクノロジー研究会（第25回）     page： pp. 125-128   2020.1

多結晶Si1-x-yGexSny三元混晶薄膜の熱電特性制御

中塚理, 彭英, 苗蕾, 高杰, 刘呈燕, 黒澤昌志, 財満鎭明

電子デバイス界面テクノロジー研究会（第25回）     page： pp. 117-120   2020.1

Semi-ballistic thermal conduction in polycrystalline SiGe nanowires Reviewed

N. Okamoto, R. Yanagisawa, A. Roman, Md. M. Alam, K. Sawano, M. Kurosawa, and M. Nomura

Applied Physics Letters     page： Vol.115, Issue 25, pp. 253101-1〜4   2019.12

Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications Reviewed

O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima

ECS Transactions     page： Vol. 92, Issue 4, pp. 41-46   2019.10

Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation Reviewed

Y. Peng, L. Miao, J. Gao, C. Liu, M. Kurosawa, O. Nakatsuka, and S. Zaima

Scientific Reports     page： Vol. 9, No.1, pp.14342-1〜9   2019.10

ゲルマニウム錫Ⅳ族混晶薄膜の結晶成長と電子物性 Invited Reviewed

中塚理, 黒澤昌志

応用物理     page： Vol. 88, No. 9, pp. 597-603   2019.9

Formation and Optoelectronic Property of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double Heterostructure on Boron-Ion-Implanted Ge(001) Substrate Reviewed

M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima

Japanese Journal of Applied Physics     page： Vol. 58, No. SI, pp. SIIB23-1〜6   2019.7

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process Reviewed

K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa

Applied Physics Express     page： Vol. 12, No. 5, pp. 051016-1〜6   2019.5

GaSb(001)基板上に形成したSi1-xSnx薄膜の結晶構造評価

丹下龍志, 黒澤昌志, 中塚理, 財満鎭明

電子デバイス界面テクノロジー研究会（第24回）     page： pp. 71-74   2019.1

ノンドープ組成傾斜SiGeワイヤの微小ゼーベック係数測定

熊田剛大, 中村俊貴, 富田基裕, 中田壮哉, 高橋恒太, 黒澤昌志, 渡邉孝信

電子デバイス界面テクノロジー研究会（第24回）     page： pp. 197-200   2019.1

高Si組成Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造のエネルギーバンド構造および光電特性評価

福田雅大, 坂下満男, 柴山茂久, 黒澤昌志, 中塚理, 財満鎭明

電子デバイス界面テクノロジー研究会（第24回）     page： pp. 265-268   2019.1

Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination Reviewed

M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima

Japanese Journal of Applied Physics     page： Vol. 58, No. SA, pp. SAAD02-1〜4   2018.11

Germanene Epitaxial Growth by Segregation through Ag(111) Thin Films on Ge(111) Reviewed

J. Yuhara, H. Shimazu, K. Ito, A. Ohta, M. Araidai, M. Kurosawa, M. Nakatake, and G. Le Lay

ACS Nano     page： Vol. 12, Issue 11, pp. 11632-11637   2018.10

Optoelectronic properties of High-Si-content-Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure Reviewed

M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima

Semiconductor Science and Technology     page： Vol. 33, No. 12, pp. 124018-1〜9   2018.10

Ultra-thin Germanium-Tin on Insulator structure through the direct bonding technique Reviewed

T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Oka, M. Kurosawa, Y. Imai, O. Nakatsuka, and N. Uchida

Semiconductor Science and Technology     page： Vol. 33, No. 12, pp. 124002-1〜5   2018.10

Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth Reviewed

R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, and A. Ogura

ECS Transactions     page： Vol. 86, Issue 7, pp. 87-93   2018.9

A New Application of Ge1-xSnx: Thermoelectric Materials Reviewed

M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

ECS Transactions     page： Vol. 86, issue 7, pp. 321-328   2018.9

エネルギーハーベスティング応用に向けたIV族混晶（Ge1-xSnx）薄膜の結晶成長 Invited Reviewed

黒澤昌志

日本熱電学会学会誌     page： Vol. 15, No.1, pp.26-31   2018.8

Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient Reviewed

K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

Japanese Journal of Applied Physics     page： Vol. 57, No. 6S1, pp. 06HD08-1〜5   2018.5

Segregated SiGe Ultrathin Layer Formation and Surface Planarization on Epitaxial Ag(111) by Annealing of Ag/SiGe(111) with Different Ge/(Si+Ge) Compositions Reviewed

K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

Japanese Journal of Applied Physics     page： Vol. 57, No. 4S, pp. 04FJ05-1〜6   2018.3

Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water Reviewed

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

Japanese Journal of Applied Physics     page： Vol. 57, No. 4S, pp. 04FJ02-1〜6   2018.2

High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water Reviewed

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

Applied Physics Letters     page： Vol. 112, Issue 6, pp. 062104-1〜5   2018.2

Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates Reviewed

M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima

Applied Physics Letters     page： Vol. 111, Issue 19, pp. 192106-1〜4   2017.11

Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures Reviewed

M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

Semiconductor Science and Technology     page： Vol. 32, No. 10, pp. 104008-1〜8   2017.9

First-principles study on adsorption structures and electronic states of stanene on α-alumina surface Reviewed

M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi

Japanese Journal of Applied Physics     page： Vol. 56, No. 9, pp. 095701-1〜4   2017.8

Growth and Applications of Si1-xSnx Thin Films Reviewed

M. Kurosawa, O. Nakatsuka, and S. Zaima

ECS Transactions     page： Vol. 80, Issue 4, pp. 253-258   2017.8

エピタキシャルAg(111)上の極薄IV族結晶形成

伊藤公一, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮崎誠一

電子情報通信学会 信学技報     page： Vol. 117, No. 101, pp. 43-48   2017.6

Evaluation of energy band offset of Si1-xSnx semiconductors by numerical calculation using density functional theory Reviewed

Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima

Japanese Journal of Applied Physics     page： Vol. 56, No. 4S, pp.04CR10-1〜5   2017.3

Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate Reviewed

I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

Materials Science in Semiconductor Processing     page： Vol. 70, pp. 151-155   2017.1

水中パルスレーザアニールを用いた多結晶Ge1-xSnx層中Sbの高活性化

高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明

電子デバイス界面テクノロジー研究会（第22回）     page： pp. 67-70   2017.1

Hydrogen-surfactant-mediated epitaxy of Ge1-x Snx layer and its effects on crystalline quality and photoluminescence property Reviewed

O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida, and S. Zaima

Japanese Journal of Applied Physics     page： Vol. 56, No. 1S, pp. 01AB05-1〜6   2016.12

Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties Reviewed

S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

Japanese Journal of Applied Physics     page： Vol. 56, No. 1S, pp. 01AB02-1〜7   2016.11

Large single-crystal Ge-on-insulator by thermally-assisted (~400C) Si-seeded-pulse-laser annealing Reviewed

T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, and M. Miyao

Materials Science in Semiconductor Processing     page： Vol. 70, pp. 8-11   2016.11

Formation and characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers Reviewed

M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima

Materials Science in Semiconductor Processing     page： Vol. 70, pp. 156-161   2016.10

Thermoelectric Properties of Ge-Rich GeSn Films Grown on Insulators Reviewed

M. Kurosawa, K. Liu, M. Izawa, I. Tsunoda, and S. Zaima

ECS Transactions     page： Vol. 75, Issue 8, pp. 481-487   2016.9

金属誘起層交換法によるAg上Si, Ge極薄膜の形成 ーシリセン, ゲルマネンの創製を目指してー Invited Reviewed

黒澤昌志, 大田晃生, 洗平昌晃, 財満鎭明

表面科学     page： Vol. 37, No. 8, pp. 374-379   2016.8

Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys Reviewed

Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima

Japanese Journal of Applied Physics     page： Vol. 55, No. 8S2, pp. 08PE04-1〜4   2016.7

Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process Reviewed

M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima

Japanese Journal of Applied Physics     page： Vol. 55, No. 8S1, pp. 08NB07-1〜5   2016.7

Sn系IV族半導体混晶薄膜の成長と物性評価

志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明

電子情報通信学会 信学技報     page： Vol. 116, No. 1, pp. 23-26   2016.4

Growth of ultrahigh-Sn-content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact Reviewed

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

Japanese Journal of Applied Physics     page： Vol. 55, No. 4S, pp. 04EB12-1〜6   2016.3

Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer Reviewed

J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

Japanese Journal of Applied Physics     page： Vol. 55, No. 4S, pp. 04EB13-1〜5   2016.3

Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution Reviewed

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Applied Physics Letters     page： Vol. 108, Issue 5, pp. 052104-1〜4   2016.2

界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長

吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

電子デバイス界面テクノロジー研究会（第21回）     page： pp. 21-24   2016.1

Si1–xSnx半導体のエネルギーバンド構造に関する理論的および実験的分析

長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明

電子デバイス界面テクノロジー研究会（第21回）     page： pp. 17-20   2016.1

Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators Reviewed

T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Transaction of the Materials Research Society of Japan     page： Vol. 40, No. 4, pp. 351-354   2015.12

Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnx epitaxial layers on Si(110) substrates Reviewed

S. Kidowaki, T. Asano, Y. Shimura, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films     page： Vol. 598, 1 January 2016, pp. 72–81   2015.12

Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer Reviewed

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

Applied Physics Letters     page： Vol. 107, Issue 21, pp. 212103-1〜5   2015.11

Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits Reviewed

S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawaa, W. Takeuchi, M. Sakashita

ECS Transactions     page： Vol. 69, Issue 10, pp. 89-98   2015.10

High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization Reviewed

W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

Applied Physics Letters     page： Vol. 107, Issue 2, pp.022103-1〜4   2015.7

Growth and Application of GeSn-Related Group-IV Semiconductor Materials Invited Reviewed

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita

Science and Technology of Advanced Materials     page： Vol.16, Issue 4, pp. 043502-1〜22   2015.7

Characterization of locally strained Ge1-xSnx/Ge fine structures by synchrotron X-ray microdiffraction Reviewed

S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

Applied Physics Letters     page： Vol. 106, Issue 18, pp. 182104-1〜5   2015.5

Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers Reviewed

M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima

Applied Physics Letters     page： Vol. 106, Issue 17, pp. 171908-1〜5   2015.4

高Sn組成SiSnの形成とバンド構造 〜直接遷移構造化を目指して〜

黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会 信学技報     page： Vol. 115, No. 18, pp. 35-37   2015.4

Formation, crystalline structure, and optical properties of Ge1-x-ySnxCy ternary alloy layers Reviewed

T. Yamaha, K. Terasawa, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Japanese Journal of Applied Physics     page： Vol. 54, Issue 4S, pp. 04DH08-1〜6   2015.2

Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2 Reviewed

T. Yamaha, M. Kurosawa, T. Ohmura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Solid State Electronics     page： Vol. 110, pp. 54-58   2015.2

Epitaxial growth and crystalline properties of Ge1-x-ySixSny layers on Ge(001) substrates Reviewed

T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Solid State Electronics     page： Vol. 110, pp. 49-53   2015.2

Sn/Ge コンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減

鈴木陽洋, 鄧云生, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第20回研究会）     page： pp. 59-62   2015.1

Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS Reviewed

Y. Kamata, M. Koike, E. Kurosawa, M. Kurosawa, H. Ota, O. Nakatsuka, S. Zaima, and T. Tezuka

Applied Physics Express     page： Vol. 7, No. 12, pp.121302-1〜4   2014.11

Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO2 substrates Reviewed

M. Kurosawa, T. Sadoh, and M. Miyao

Journal of Applied Physics     page： Vol. 116, Issue17, pp.173510-1〜8   2014.11

Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates Reviewed

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, S. Ike, M. Kurosawa, W. Takeuchi, and S. Zaima

ECS Transactions     page： Vol. 64, Issue 6, pp. 793-799   2014.10

Sn/Geコンタクトにおけるフェルミレベルピニング現象の軽減

鈴木陽洋, 朝羽俊介, 横井淳, 中塚理, 黒澤昌志, 加藤公彦, 坂下満男, 田岡紀之, 財満鎭明

電子情報通信学会 信学技報　     page： vol. 114, no. 88, pp. 11-16   2014.6

絶縁膜上における IV 族半導体の低温形成　〜低融点 Sn の活用〜

黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会 信学技報　     page： vol. 114, no. 88, pp. 91-95   2014.6

Dynamics Analysis of Rapid-Melting Growth Using SiGe on Insulator Reviewed

R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh, and M. Miyao

Thin Solid Films     page： Vol. 557, pp. 125–128   2014.4

Coherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization Reviewed

T. Sadoh, M. Kurosawa, K. Toko, and M. Miyao

Thin Solid Films     page： Vol. 557, pp. 135–138   2014.4

Influence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers Reviewed

T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films     page： Vol. 557, pp. 159–163   2014.4

Formation and characterization of locally strained Ge1-xSnx/Ge microstructures Reviewed

S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

Thin Solid Films     page： Vol. 557, pp. 164–168   2014.4

Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode Reviewed

A. Suzuki, S. Asaba, J. Yokoi, K. Kato, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Japanese Journal of Applied Physics     page： Vol. 53, Issue 4S, pp. 04EA06-1〜5   2014.3

Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and melt-back-growth in solid-liquid coexisting region Reviewed

R. Matsumura, R. Kato, Y. Tojo, M. Kurosawa, T. Sadoh, and M. Miyao

Electrochemical and Solid-State Letters     page： Vol. 3, Isuue 5, pp. P61-P64   2014.3

Large grain growth of Ge-rich Ge1-xSnx (x=0.02) on insulating surfaces using pulsed laser annealing in flowing water Reviewed

M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima

Applied Physics Letters     page： Vol. 104, Issue 6, pp. 061901-1〜4   2014.2

Characterization of Local Strain Structures in Heteroepitaxial Ge1-xSnx/Ge Microstructures by using Microdiffraction Method Reviewed

S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

ECS Transactions     page： Vol. 58, Issue 9, pp. 185-192   2013.10

Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunitiesi Reviewed

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, and S. Zaima

ECS Transactions     page： Vol. 58, Issue 9, pp. 149-155   2013.10

Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible Electronics Reviewed

T. Sadoh, J.-H. Park, M. Kurosawa, and M. Miyao

ECS Transactions     page： Vol. 58, Issue 9, pp. 213-221   2013.10

Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer Reviewed

M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima

Applied Physics Letters     page： Vol. 103, Issue 11, pp. 101904-1〜4   2013.9

Nucleation-controlled gold-induced crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (~250oC) Reviewed

J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh

Applied Physics Letters     page： Vol. 103, Issue 8, pp. 082102-1〜4   2013.8

Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates Reviewed

K. Toko, N. Fukata, K. Nakazawa, M. Kurosawa, N. Usami, M. Miyao, T. Suemasu

Journal of Crystal Growth     page： Vol. 372, pp. 189–192   2013.6

High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth Reviewed

Y. Tojo, R. Matsumura, H. Yokoyama, M. Kurosawa, K. Toko, T. Sadoh, and M. Miyao

Applied Physics Letters     page： Vol. 102, Issue 2, pp. 092102-1〜4   2013.3

Atomically-coherent-coalescence of two growth-fronts in Ge stripes on insulator by rapid-melting lateral-crystallization Reviewed

M. Kurosawa, K. Toko, T. Sadoh, I. Mizushima, and M. Miyao

ECS Journal of Solid State Science and Technology     page： Vol. 2, Issue 3, pp. P54-P57   2012.12

Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth Reviewed

R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh, I. Mizushima, and M. Miyao

Applied Physics Letters     page： Vol. 101, Issue 24, pp. 241904-1〜5   2012.12

Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process Reviewed

R. Kato, M. Kurosawa, R. Matsumura, T. Sadoh, and M. Miyao

ECS Transactions     page： Vol. 50, Issue 9, pp. 431-436   2012.10

(Invited) Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal --- Reviewed

M. Miyao, M. Kurosawa, K. Toko, Y. Tojo, and T. Sadoh

ECS Transactions     page： Vol. 50, Issue 5, pp. 59-70   2012.10

Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting- Growth Reviewed

R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao

ECS Transactions     page： Vol. 50, Issue 9, pp. 747-751   2012.10

Formation of Large-Grain Ge(111) Films on Insulator by Gold-Induced Layer-Exchange Crystallization at Low Temperature Poster Session Reviewed

J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh

ECS Transactions     page： Vol. 50, Issue 9, pp. 475-480   2012.10

Single-crystalline laterally-graded GeSn on insulator structures by segregation controlled rapid-melting growth Reviewed

M. Kurosawa, Y. Tojo, R. Matsumura, T. Sadoh, and M. Miyao

Applied Physics Letters     page： Vol. 101, Issue 9, pp. 091905-1〜4   2012.8

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization Reviewed

K. Toko, M. Kurosawa, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao, and T. Suemasu

Applied Physics Letters     page： Vol. 101, Issue 7, pp. 072106-1〜3   2012.8

Enhanced Interfacial-Nucleation in Al-Induced Crystallization for (111) Oriented Si1-xGex (0<x<1) Films on Insulating Substrates Reviewed

M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao

ECS Journal of Solid State Science and Technology     page： Vol. 1, Issue 3, pp. P144-P147   2012.8

SiGeミキシング誘起溶融成長によるGOI（Ge on Insulator）の形成―人工単結晶への道― Invited Reviewed

宮尾正信，佐道泰造，都甲薫，黒澤昌志

応用物理     page： Vol. 81, No. 5, pp. 410-414   2012.5

Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth Reviewed

M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao

Applied Physics Letters     page： Vol. 100, Issue 17, pp. 172107-1〜5   2012.4

界面酸化膜挿入型 Au 誘起層交換成長法による大粒径 Ge(111)/絶縁膜の低温成長-界面酸化膜厚依存性-

鈴木恒晴, パク・ジョンヒョク, 黒澤昌志, 宮尾正信, 佐道泰造

電子情報通信学会 信学技報　     page： vol. 112, no. 18, pp. 71-73   2012.4

絶縁膜上におけるGe(Si)薄膜の溶融成長 〜Si偏析効果による大粒径化〜

加藤立奨，黒澤昌志，横山裕之，佐道泰造，宮尾正信

電子情報通信学会 信学技報　     page： vol. 112, no. 18, pp. 61-62   2012.4

Enhancement of SiN-Induced Compressive and Tensile Strains in Si Free-Standing Microstructures by Modulation of SiN Network Structures Reviewed

T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, M. Miyao

Thin Solid Films     page： Vol. 520, Issue 8, pp. 3276–3278   2012.2

Low Temperature (~250oC) Layer Exchange Crystallization of Si1-xGex (x= 1-0) on Insulator for Advanced Flexible Devices Reviewed

J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh

Thin Solid Films     page： Vol. 520, Issue 8, pp. 3293–3295   2012.2

Au-catalyst induced low temperature (~250oC) layer exchange crystallization for SiGe on insulator Reviewed

J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh

ECS Transactions     page： Vol. 35, Issue 5, pp. 39-42   2011.5

Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization Reviewed

M. Kurosawa, N. Kawabata, R. Kato, T. Sadoh, and M. Miyao

ECS Transactions     page： Vol. 35, Issue 5, pp. 51-54   2011.5

Low-temperature (~250oC) Cu-induced lateral crystallization of Ge on insulator Reviewed

T. Sadoh, M. Kurosawa, T. Hagihara, K. Toko, and M. Miyao

Electrochemical and Solid-State Letters     page： Vol. 17, Issue 7, pp. H274-H276   2011.4

Au-induced low-temperature (~250oC) crystallization of Si on insulator through layer-exchange process Reviewed

J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh

Electrochemical and Solid-State Letters     page： Vol. 14, Issue 6, pp. H232-H234   2011.3

SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-on-Insulator Reviewed

T. Sadoh, K. Toko, M. Kurosawa, T. Tanaka, T. Sakane, Y. Ohta, N. Kawabata, H. Yokoyama, and M. Miyao

Key Engineering Materials     page： Vol. 470, pp. 8-13   2011.2

Al-Induced Oriented-Crystallization of Si Films on Quartz and Its Application to Epitaxial-Template for Ge Growth Reviewed

M. Kurosawa, K. Toko, N. Kawabata, T. Sadoh, and M. Miyao

Solid State Electronics     page： Volume 60, Issue 1, pp. 7–12   2011.2

Dehydrogenation-enhanced large strain (~1.6%) in free-standing Si microstructures covered with SiN stress liners Reviewed

M. Kurosawa, T. Sadoh, and M. Miyao

Electrochemical and Solid-State Letters     page： Vol. 14, Issue 4, pp. H174-H176   2011.2

Selective-mapping of uniaxial and biaxial strains in SOI micro-structures by polarized micro-probe Raman spectroscopy Reviewed

M. Kurosawa, T. Sadoh, and M. Miyao

Applied Physics Letters     page： Vol. 98, Issue 1, pp. 012110-1－3   2011.1

High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates Reviewed

M. Miyao, K. Toko, M. Kurosawa, T. Tanaka, T. Sakane, Y. Ohta, N. Kawabata, H. Yokoyama, and T. Sadoh

Proceeding of ICSICT2010 (IEEE)     page： pp.827-830   2010.12

Low-temperature (<250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique Reviewed

J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh

Proceeding of TENCON2010 (IEEE)     page： pp.2196-2198   2010.11

(100) orientation-controlled Ge giant-stripes on insulating substrates by rapid-melting growth combined with Si micro-seed technique Reviewed

K. Toko, M. Kurosawa, H. Yokoyama, N. Kawabata, T. Sakane, Y. Ohta, T. Tanaka, T. Sadoh, and M. Miyao

Applied Physics Express     page： Vol. 3, No. 7, pp. 075603-1－3　   2010.6

ガラス上におけるSiGe薄膜のアルミニウム誘起結晶化とその成長メカニズム　

川畑直之, 黒澤昌志, 佐道泰造, 宮尾正信　

電子情報通信学会 信学技報　     page： Vol. 110, No. 15, pp. 13-17　   2010.4

Al-Induced Low-Temperature Crystallization of Si1-xGex (0<x<1) by Controlling Layer Exchange Process Reviewed

M. Kurosawa, T. Sadoh, and M. Miyao

Thin Solid Films     page： Vol. 518,Issue 6, Supplement 1, pp. S174-S178　   2010.1

Stress-enhancement in free-standing Si pillars through non-equilibrium dehydrogenation in SiN:H stress-liners by UV-light irradiation Reviewed

T. Tanaka, T. Sadoh, M. Kurosawa, M. Tanaka, M. Yamaguchi, S. Suzuki, T. Kitamura, and M. Miyao

Applied Physics Letters     page： Vol. 95, Issue 26, pp. 262103-1－3　   2009.12

Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation Reviewed

M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao

Applied Physics Letters     page： Vol. 95, Issue 13, pp. 132103-1－3　   2009.9

アルミニウム誘起層交換法によるSiGe/ガラスの低温成長　

黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信　

電子情報通信学会 信学技報　     page： Vol. 109, No. 20, pp. 19-23　   2009.4

Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0-1) on Insulating Substrate Reviewed

M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao

Japanese Journal of Applied Physics     page： Vol. 48, No. 3, pp. 03B002-1－5　   2009.3

Ge Fraction Dependence of Al-induced Crystallization of SiGe at Low Temperatures Reviewed

M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao

Journal of the Korean Physical Society     page： Vol. 54, No. 1, pp. 451-454　   2009.1

Low-Temperature Oriented-Growth in [CoPt/MgO]n Multi-Layer Reviewed

T. Sadoh, M. Kurosawa, M. Kimura, K Ueda, M. Koyanagi, and M. Miyao

Thin Solid Films     page： Vol. 517, Issue 1, pp. 430-433　   2008.11

Giant thermoelectric power observed in group-IV-based films with high carrier concentrations at low temperatures International conference

Masashi Kurosawa, Takayoshi Katase, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka

15th International Workshop on New Group IV Semiconductor Nanoelectronics 

Segregation induced GeSn nanosheet formation through Al and Ge1−xSnx epitaxial layers International conference

Taiga Matsumoto, Akio Ohta, Ryo Yokogawa, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, and Shigehisa Shibayama

15th International Workshop on New Group IV Semiconductor Nanoelectronics 

Formation of methylated germanane multilayers from CaGe2 epitaxial layers on Ge(111) International conference

Atsuki Nakayama, Kazuho Matsumoto, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, and Masashi Kurosawa

15th International Workshop on New Group IV Semiconductor Nanoelectronics 

New interests of Ge1−x−ySixSny/Ge1−xSnx heterostructures for electronic device applications International conference

Shigehisa Shibayama, Shuto Ishimoto, Yoshiki Kato, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka

15th International Workshop on New Group IV Semiconductor Nanoelectronics 

Explorer and Development of Very-High-Sn-Content Ge1−xSnx Epitaxy for Electronic and Optoelectronic Applications International conference

Osamu Nakatsuka, Shigehisa Shibayama, Masashi Kurosawa, and Mitsuo Sakashita

15th International Workshop on New Group IV Semiconductor Nanoelectronics 

Evaluation of Band Structure of Single Crystalline Si-rich Si1-xSnx Thin Film International conference

H. Ishizaki, R. Yokogawa, Y. Ito, M. Kurosawa, and A. Ogura

PRiME 2024 

Recent Progress on Heteroepitaxy of Si-Sn Alloy Thin Films International conference

M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka

PRiME 2024 

Comprehensive study on epitaxial growth of GeSn(111) layers with high Sn content on Si(111) featuring Ge buffer layer International conference

S. Shibayama, S. Mori, Y. Kato, M. Sakashita, M. Kurosawa, and O. Nakatsuka

PRiME 2024 

GeSiSn/GeSnヘテロ接合を用いた p型HEMTの構造設計

鳥本昇汰, 坂下満男, 黒澤昌志, 中塚理, 柴山茂久

第85回応用物理学会秋季学術講演会 

分子線エピタキシー法を用いたメチル化ゲルマナン薄膜の形成

中山敦稀, 松本一歩, 柴山茂久, 坂下満男, 中塚理, 黒澤昌志

第85回応用物理学会秋季学術講演会 

単結晶歪Si1-xSnxのバンド構造評価(Ⅱ)

石崎寛規, 横川凌, 箕輪卓哉, 黒澤昌志, 小椋厚志

第85回応用物理学会秋季学術講演会 

ALD-GeO2を用いたGeSnの表面パッシベーション

加藤芳規, 坂下満男, 黒澤昌志, 中塚理, 柴山茂久

第85回応用物理学会秋季学術講演会 

高Sn組成Ge1−xSnxエピタキシャル層の結晶性に堆積速度が及ぼす影響

中塚理, 壁谷汰知, 柴山茂久, 坂下満男, 黒澤昌志

第85回応用物理学会秋季学術講演会 

GeSiSn/GeSn二重障壁構造のエピタキシャル成長におけるH2導入効果

柴山茂久, 石本修斗, 坂下満男, 黒澤昌志, 中塚理

第85回応用物理学会秋季学術講演会 

最先端集積回路における金属/IV族半導体界面物性制御の課題と展開

中塚理, 柴山茂久, 坂下満男, 黒澤昌志

第85回応用物理学会秋季学術講演会 

偏析GeSn極薄結晶の形成に向けたGe1−xSnxエピタキシャル膜の表面処理

松本泰河, 大田晃生, 横川凌, 黒澤昌志, 坂下満男, 中塚理, 柴山茂久

第85回応用物理学会秋季学術講演会 

転写を用いたInP格子整合系GeSnOI MSMフォトディテクターの試作

前田辰郎, 石井裕之, 張文馨, 高木孝明, 柴山茂久, 黒澤昌志, 中塚理

第85回応用物理学会秋季学術講演会 

Si(111)基板上CaSi2エピタキシャル薄膜の低温熱電特性

加藤高, 柴山茂久, 坂下満男, 中塚理, Ahmad Al Ghiffari, Rifky Syariati, 石井史之, 片瀬貴義, 黒澤昌志

日本セラミックス協会 第37回秋季シンポジウム 

イオン注入法により形成したn型4H-SiC薄膜の低温熱電特性

椙村樹, 柴山茂久, 坂下満男, 中塚理, 和田涼太, 黒井隆, 片瀬貴義, 黒澤昌志

日本セラミックス協会 第37回秋季シンポジウム 

Efficient Reverse Current Reduction of GeSn-Based pn Diodes by Surface Passivation of ALD-GeO2 and Al2O3 Stacked Structure International conference

Yoshiki Kato, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, and Shigehisa Shibayama

International Conference on Solid State Devices and Materials 2024 (SSDM2024) 

Comprehensive Study on Crystal Growth of CaSi2 Layers on Si(111) Using Solid Phase Epitaxy International conference

Kagiri Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, and Masashi Kurosawa

International Conference on Solid State Devices and Materials 2024 (SSDM2024) 

GeSn on Insulator Metal-Semiconductor-Metal Photodetector by Layer Transfer Technique International conference

Tatsuro Maeda, Hiroyuki Ishii, Wen Hsin Chang, Takaaki Takagi, Shigehisa Shibayama, Masashi Kurosawa, and Osamu Nakatsuka

International Conference on Solid State Devices and Materials 2024 (SSDM2024) 

Fabrication of planar thermoelectric generators using phosphorus-doped silicon nanocrystals/amorphous silicon composite films International conference

Yasuyoshi Kurokawa, Keisuke Shibata, Shinya Kato, Masashi Kurosawa, Satoru Miyamoto, Takashi Itoh, and Noritaka Usami

International Conference on Solid State Devices and Materials 2024 (SSDM2024) 

Influence of hydrogen desorption temperature on interlayer distance of multilayered GeH nanosheets under ultrahigh vacuum ambient International conference

Kazuho Matsumoto, Masaaki Araidai, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Tomonori Nishimura, Kosuke Nagashio, and Masashi Kurosawa

International Conference on Solid State Devices and Materials 2024 (SSDM2024) 

近接蒸着法により作製したCaSi2薄膜の低温塩酸処理による表面形状変化

高垣僚太, 有元圭介, 山中淳二, 黒澤昌志, 原康祐

第21回シリサイド系半導体・夏の学校 

粉末シリカンの電気的特性の評価

上田光秀, 大西康介, 市川智揮, 山田繁, 伊藤貴司, 黒澤昌志

第21回「次世代の太陽光発電システム」シンポジウム（第4回日本太陽光発電学会学術講演会） 

Planar-type SiGe thermoelectric generator with double cavity structure International conference

S. Koike, R. Yanagisawa, L. Jalabert, R. Anufriev, M. Kurosawa, T. Mori, and M. Nomura

Third Asian Conference on Thermal Sciences (ACTS 2024) 

高キャリア濃度14族薄膜で生じる巨大フォノンドラッグ効果

黒澤昌志

研究会「熱電材料研究の最前線と新展開」 

GaAs基板に形成したSbドープGe1-x-ySixSny薄膜の低温熱電物性

椙村樹, 中田壮哉, 柴山茂久, 坂下満男, 中塚理, 片瀬貴義, 黒澤昌志

第71回応用物理学会春季学術講演会 

Pドープ/Bドープナノ結晶Si/アモルファスSi複合薄膜の熱電デバイス応用

柴田啓介, 加藤慎也, 黒澤昌志, 後藤和泰, 宮本聡, 伊藤孝至, 宇佐美徳隆, 黒川康良

第71回応用物理学会春季学術講演会 

ダブルキャビティ構造を有するSiGe平面型熱電素子

小池壮太, 柳澤亮人, 黒澤昌志, 森孝雄, 野村政宏

第71回応用物理学会春季学術講演会 

GeSiSn/GeSn二重障壁構造で観測した負性微分抵抗と動作特性解析

柴山茂久, 石本修斗, 坂下満男, 黒澤昌志, 中塚理

第71回応用物理学会春季学術講演会 

In-situ Sbドーピングによるn型Ge0.75Sn0.25エピタキシャル層の形成

柴山茂久, 高木孝明, 坂下満男, 黒澤昌志, 中塚理

第71回応用物理学会春季学術講演会 

真空中加熱によるGe(111)基板上GeH薄膜の層間距離変化

松本一歩, 洗平昌晃, 柴山茂久, 坂下満男, 中塚理, 黒澤昌志

第71回応用物理学会春季学術講演会 

高抵抗Si(111)基板上へのCaSi2薄膜形成と低温熱電物性評価

加藤高, 柴山茂久, 坂下満男 , 中塚理, 片瀬貴義, 黒澤昌志

第71回応用物理学会春季学術講演会 

GeSn/GeSiSn二重障壁構造における負性微分抵抗の発現

石本修斗, 坂下満男, 黒澤昌志, 中塚理, 柴山茂久

第29回 電子デバイス界面テクノロジー研究会 

Al/GeSn(111)構造上への熱処理による極薄・高Sn組成GeSn表面偏析

柴山茂久, 松本泰河, 大田晃生, 横川凌, 坂下満男, 黒澤昌志, 中塚理

第29回 電子デバイス界面テクノロジー研究会 

In-situ SbドーピングによるInP上n型Ge0.75Sn0.25エピタキシャル膜の形成

柴山茂久, 高木孝明, 坂下満男, 黒澤昌志, 中塚理

第29回 電子デバイス界面テクノロジー研究会 

A new challenge in group-IV materials: energy harvesting application & 2D crystal synthesizing International conference

M. Kurosawa, A. Ohta, M. Araidai, S. Shibayama, M. Sakashita, and O. Nakatsuka

14th International Workshop on New Group IV Semiconductor Nanoelectronics 

Thermoelectric properties of Sb-doped Ge1-x-ySixSny ternary alloy layers lattice matched to GaAs substrates International conference

I. Sugimura, M. Nakata, S. Shibayama, M. Sakashita, O. Nakatsuka, T. Katase, and M. Kurosawa

14th International Workshop on New Group IV Semiconductor Nanoelectronics 

Electrical activation of implanted phosphorus in GeSn epitaxial layers grown on Si(111) substrate International conference

Y. Kato, M. Fukuda, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka

14th International Workshop on New Group IV Semiconductor Nanoelectronics 

Thermoelectric properties of P-doped and B-doped polycrystalline silicon thin films International conference

K. Shibata, S. Kato, M. Kurosawa, K. Gotoh, S. Miyamoto, T. Itoh, N. Usami, and Y. Kurokawa

2023 MRS Fall Meeting & Exhibit 

Crystal Growth Technology of GeSn-related Group-IV Heteroepitaxial Layers International conference

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

3rd Nucleation and Growth Research Conference 

Ge1-xSnx(111)エピタキシャル層へのPイオン注入と活性化

加藤芳規, 柴山茂久, 坂下満男, 黒澤昌志, 中塚理

第10回 応用物理学会 名古屋大学スチューデントチャプター 東海地区学術講演会 

Al/GeSn(111)構造からの偏析を用いた極薄・高Sn組成GeSnの形成

松本泰河, 大田晃生, 横川凌, 坂下満男, 黒澤昌志, 中塚理, 柴山茂久

第10回 応用物理学会 名古屋大学スチューデントチャプター 東海地区学術講演会 

GeSn/GeSiSn共鳴トンネルダイオードにおける負性微分抵抗の観測

石本修斗, 坂下満男, 黒澤昌志, 中塚理, 柴山茂久

第10回 応用物理学会 名古屋大学スチューデントチャプター 東海地区学術講演会 

スパッタリング法によるInP基板上へのエピタキシャルGe0.75Sn0.25形成

壁谷汰知, 柴山茂久, 高木孝明, 坂下満男, 黒澤昌志, 中塚理

第10回 応用物理学会 名古屋大学スチューデントチャプター 東海地区学術講演会 

粉末シリカンとゲルマナンの電気的特性評価

大西康介, 上田光秀, 山田繁, 伊藤貴司, 黒澤昌志

第10回 応用物理学会 名古屋大学スチューデントチャプター 東海地区学術講演会 

First-principles study on two-dimensional materials of silicon/germanium

M. Araidai, M. Itoh, D. Ishihara, M. Kurosawa, A. Ohta, A. Yamakage, and K. Shiraishi

2023年日本表面真空学会学術講演会 

Sputtering heteroepitaxy of Ge0.75Sn0.25 layer on InP(001) substrate International conference

T. Kabeya, S. Shibayama, K. Takagi, M. Sakashita, M. Kurosawa, and O. Nakatsuka

2023 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (2023 IWDTF) 

Epitaxial Growth Technique for Si1-xSnx Binary Alloy Thin Films International conference

M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka

244th ECS Meeting 

近接蒸着法により成膜したCaSi2のSiHへの変換

高垣僚太, 有元圭介, 山中淳二, 黒澤昌志, 原康祐

第84回応用物理学会秋季学術講演会 

SiGe薄膜におけるナノ構造作製の熱電性能に与える影響

小池壮太, 柳澤亮人, 黒澤昌志, Jha Rajveer, 辻井直人, 森孝雄, 野村政宏

第84回応用物理学会秋季学術講演会 

Pドープ/Bドープ poly-Si薄膜の熱電特性評価

柴田啓介, 加藤慎也, 黒澤昌志, 後藤和泰, 宮本聡, 伊藤孝至, 宇佐美徳隆, 黒川康良

第84回応用物理学会秋季学術講演会 

PL法及びXPSによる単結晶Si1-xSnxのバンド構造評価

石崎寛規, 横川凌, 伊藤佑太, 大岩樹, 黒澤昌志, 小椋厚志

第84回応用物理学会秋季学術講演会 

Si1−xSnx薄膜で観測される巨大熱電能の電子濃度依存性

大岩樹, 柴山茂久, 坂下満男, 中塚理, 片瀬貴義, 黒澤昌志

第84回応用物理学会秋季学術講演会 

Ge格子整合系SixGe1-x-ySny三元混晶とその転写

前田辰郎, 石井裕之, 張文馨, 張 師宇, 柴山茂久, 黒澤昌志, 中塚理

第84回応用物理学会秋季学術講演会 

スパッタリング法によるInP基板上のGe0.75Sn0.25エピタキシャル成長

壁谷汰知, 柴山茂久, 高木孝明, 坂下満男, 黒澤昌志, 中塚理

第84回応用物理学会秋季学術講演会 

Al/GeSn(111)エピタキシャル層構造からの偏析による極薄GeSn形成

松本泰河, 柴山茂久, 大田晃夫, 横川凌, 黒澤昌志, 坂下満男, 中塚理

第84回応用物理学会秋季学術講演会 

イオン注入法によるn型無歪Ge1-xSnx(111)エピタキシャル層の形成

加藤芳規, 柴山茂久, 坂下満男, 黒澤昌志, 中塚理

第84回応用物理学会秋季学術講演会 

Optoelectronic properties of Ge1-xSnx/high-Si-content SiyGe1-y-zSnz double quantum wells formed by low-temperature MBE growth and post deposition annealing International conference

S. Shibayama, S. Zhang, M. Sakashita, M. Kurosawa, and O. Nakatsuka

International Conference on Solid State Devices and Materials 2023 (SSDM2023) 

Low-temperature thermoelectric power-factor enhancement of n-type Ge-rich Ge1-x-ySixSny layers International conference

I. Sugimura, M. Nakata, S. Shibayama, M. Sakashita, O. Nakatsuka, T. Katase, and M. Kurosawa

International Conference on Solid State Devices and Materials 2023 (SSDM2023) 

Experimental observation of negative differential resistance in GeSn/GeSiSn double barrier structure toward resonant tunneling diode applications International conference

S. Ishimoto, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Shibayama

International Conference on Solid State Devices and Materials 2023 (SSDM2023) 

Giant thermoelectric power of n-type Si1-xSnx layers grown on FZ-Si(001) substrates International conference

T. Oiwa, S. Shibayama, M. Sakashita, O. Nakatsuka, T. Katase, and M. Kurosawa

International Conference on Solid State Devices and Materials 2023 (SSDM2023) 

Seed-layer driven solid phase epitaxy of amorphous Ge1-xSnx layers on Si(001) substrates toward in-plane strain control International conference

T. Hiraide, M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka

International Conference on Solid State Devices and Materials 2023 (SSDM2023) 

高濃度n型ドープSi1−xSnx薄膜の低温熱電物性評価

大岩樹, 柴山茂久, 坂下満男, 中塚理, 片瀬貴義, 黒澤昌志

第7回フォノンエンジニアリング研究会 

Fabrication and evaluation of a planar-type uni-leg SiGe thermoelectric generator International conference

S. Koike, R. Yanagisawa, M. Kurosawa, R. Jha, N. Tsujii, T. Mori, and M. Nomura

The 39th Annual International Conference on Thermoelectrics (ICT 2023) 

Low-temperature Thermoelectric Properties of GeSn Alloys Films International conference

M. Kurosawa, T. Katase, Y. Imai, M. Nakata, M. Kimura, T. Kamiya, S. Shibayama, M. Sakashita, and O. Nakatsuka

The Joint ISDTM/ICSI conference 2023 

The layer transfer of Ge-lattice-matched SiGeSn epitaxial structures International conference

T. Maeda, W. H. Chang, H. Ishii, S. Zhang, S. Shibayama, M. Kurosawa, O. Nakatsuka

The Joint ISDTM/ICSI conference 2023 

Heteroepitaxial Growth of High Substitutional Sn-content Ge1-xSnx Layer Lattice-matched on InP Substrate International conference

O. Nakatsuka, K. Takagi, S. Shibayama, M. Kurosawa, and M. Sakashita

The Joint ISDTM/ICSI conference 2023 

Determining the Superiority of Cavity-Free Thermoelectric Generators Composed of GeSn and Si Wires International conference

M. M. H. Mahfuz, M. Kurosawa, T. Matsuki, and T. Watanabe

The Joint ISDTM/ICSI conference 2023 

Epitaxy and heterostructure of germanium tin-related group-IV alloy semiconductors for future electronic and optoelectronic applications International conference

O. Nakatsuka, M. Kurosawa, S. Shibayama, and M. Sakashita

2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors 

GeSn/GeSiSn共鳴トンネルダイオードの室温動作に向けた構造設計

石本修斗, 坂下満男, 黒澤昌志, 中塚理, 柴山茂久

第70回応用物理学会春季学術講演会 

固相成長法による Si(001)基板上の伸長歪み Ge1-xSnx薄膜の形成

平出達磨, 大岩樹, 柴山茂久, 坂下満男, 中塚理, 黒澤昌志

第70回応用物理学会春季学術講演会 

高Sn組成Ge1-xSnx(111)エピタキシャル薄膜の高品質形成

森俊輔, 柴山茂久, 加藤芳規, 坂下満男, 黒澤昌志, 中塚理

第70回応用物理学会春季学術講演会 

半絶縁性基板上Ge1-xSnx薄膜の低温熱電物性

今井志明, 中田壮哉, 木村公俊, 片瀬貴義, 神谷利夫, 柴山茂久, 坂下満男, 中塚理, 黒澤昌志

第70回応用物理学会春季学術講演会 

高濃度n型ドープSi1-xSnx薄膜で観測された巨大熱電能

大岩樹, 柴山茂久, 坂下満男, 中塚理, 片瀬貴義, 黒澤昌志

第70回応用物理学会春季学術講演会 

Potential of Silicon-Germanium-Tin Thin Films for Future Thermoelectric Device Applications International conference

M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka

ISPlasma2023/IC-PLANTS2023 

Investigating the superiority of the cavity-free architectural GeSn and Si wires-based thermoelectric generators

M. M. H. Mahfuz, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe

第28回 電子デバイス界面テクノロジー研究会 

Arising ferroelectric properties in ZrO2 thin films down to 4 nm International conference

S. Ikeguchi, J. Nagano, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Shibayama

13th International Workshop on New Group IV Semiconductor Nanoelectronics 

Development of accurate characterization technique of electrical properties in Ge1-xSnx-based group-IV epitaxial layers International conference

T. Mori, S. Shibayama, K. Nishizawa, M. Sakashita, M. Kurosawa, and O. Nakatsuka

13th International Workshop on New Group IV Semiconductor Nanoelectronics 

Crystalline and electrical properties of Ge1-x-ySixSny epitaxial layers - Effect of Si incorporation and H2 irradiation - International conference

K. Nishizawa, S. Shibayama, T. Mori, M. Sakashita, M. Kurosawa, and O. Nakatsuka

13th International Workshop on New Group IV Semiconductor Nanoelectronics 

Heteroepitaxy of Ge1-xSnx with a high Sn content over 25% on InP(001) toward group-IV infrared detector International conference

K. Takagi, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka

13th International Workshop on New Group IV Semiconductor Nanoelectronics 

Challenge and new opportunity of Ge1−x−ySixSny/Ge1−xSnx heterostructures for optoelectronic and electronic device applications International conference

S. Shibayama, S. Zhang, M. Sakashita, M. Kurosawa, and O. Nakatsuka

13th International Workshop on New Group IV Semiconductor Nanoelectronics 

Epitaxial Germanide/Germanium Contact: Its Impact on Schottky Barrier Height International conference

O. Nakatsuka, S. Shibayama, M. Sakashita, and M. Kurosawa

13th International Workshop on New Group IV Semiconductor Nanoelectronics 

EXAFSによるZrO2薄膜の強誘電性発現機構の理解

池口祥太, 永野丞太郎, 坂下満男, 黒澤昌志, 中塚理, 柴山茂久

11th NUSR Symposium, 名古屋大学シンクロトロン光研究センターシンポジウム(2022) 

Ge1-xSnx系IV族半導体混晶エピタキシャル層の電気的欠陥密度の評価

西澤康平, 坂下満男, 黒澤昌志, 中塚理, 柴山茂久

第22回 日本表面真空学会中部支部学術講演会 

Research and Development of GeSn-related Group-IV Semiconductor Heterostructures for Optoelectronic Applications International conference

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

Symposium on Light emission and Photonics of Group IV semiconductor Nanostructures (LPGN) 

Determination superiority of the cavity-free thermoelectric generators consisting of GeSn and Si wires International conference

M. M. H. Mahfuz, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe

Integrated Nanocomposites for Thermal and Kinetic Energy Harvesting (INTAKE) Seminar 2022 

Synthesis of multilayer two-dimensional group-IV flakes and nanosheets International conference

M. Kurosawa, M. Itoh, Y. Ito, K. Okada, A. Ohta, M. Araidai, K. O. Hara, Y. Ando, S. Yamada, S. Shibayama, M. Sakashita, O. Nakatsuka

33rd International Photovoltaic Science and Engineering Conference (PVSEC-33) 

14 族半導体ナノシートの結晶成⻑とデバイス応用

黒澤昌志

2022年度 東海NFRW・若手チャプタージョイントワークショップ 

Spin Dependent Photocurrent Generation in Germanene-like Structure International conference

T. Nishijima, S. Kawa, Y. Ando, A. Ohta, J. Yuhara, M. Kurosawa, E. Shigematsu, R. Ohshima, and M. Shiraishi

The 67th Annual Conference on Magnetism and Magnetic Materials (MMM 2022) 

Impact of Strain Structure in Epitaxial HfGe2/n-Ge(001) Contact on Morphology and Schottky Barrier Height International conference

O. Nakatsuka, K. Kasahara, S. Shibayama, M. Sakashita, and M. Kurosawa

Advanced Metallization Conference 2022 (ADMETA Plus 2022) 

Investigation of Band Structure in Strained Single Crystalline Si1-xSnx International conference

K. Sahara, R. Yokogawa, Y. Shibayama, Y. Hibino, M. Kurosawa, and A. Ogura

242nd ECS Meeting 

Preparation and thermoelectric characterization of boron-doped silicon nanocrystals/silicon oxide multilayers International conference

K. Shibata, S. Kato, M. Kurosawa, K. Gotoh, S. Miyamoto, N. Usami , and Y. Kurokawa

International Conference on Solid State Devices and Materials 2022 (SSDM2022) 

Molecular beam epitaxy of Si1−xSnx layers with 10%-Sn content on Si1−yGey buffers International conference

K. Fujimoto, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka

International Conference on Solid State Devices and Materials 2022 (SSDM2022) 

Study on doping by ion implantation to Si1-xSnx epitaxial layers International conference

T. Oiwa, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka

International Conference on Solid State Devices and Materials 2022 (SSDM2022) 

Experimental Demonstration of The Cavity-Free GeSn and Si Wire Thermoelectric Generators International conference

M. M. H. Mahfuz, K. Katayama, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe

International Conference on Solid State Devices and Materials 2022 (SSDM2022) 

シリコン系マイクロ熱電発電デバイスの開発

渡邉孝信, 富田基裕, ハサン マフス, 黒澤昌志, 松木武雄, シルビア チュン, 王 海東

M&M2022 材料力学カンファレンス 

InP基板上の超高Sn組成Ge1-xSnxヘテロエピタキシャル層の結晶性改善

高木孝明, 柴山茂久, 黒澤昌志, 坂下満男, 中塚理

第83回応用物理学会秋季学術講演会 

熱安定性の高いGe1–xSnx量子ドットの自己形成

橋本薫, 柴山茂久, 安坂幸師, 黒澤昌志, 坂下満男, 中塚理

第83回応用物理学会秋季学術講演会 

単結晶歪Si1-xSnxのバンド構造評価

佐原敬太, 横川凌, 柴山裕貴, 日比野祐介, 黒澤昌志, 小椋厚志

第83回応用物理学会秋季学術講演会 

Si(111)上における直接遷移Ge1-xSnxヘテロエピタキシャル層の形成

森俊輔, 柴山茂久, 坂下満男, 黒澤昌志, 中塚理

第83回応用物理学会秋季学術講演会 

高抵抗Si(111)基板上における多層シリカンナノシートの形成

伊藤善常, 柴山茂久, 坂下満男, 中塚理, 黒澤昌志

第83回応用物理学会秋季学術講演会 

ボロンドープしたシリコンナノ結晶/シリコン酸化膜積層構造の作製及び熱電特性評価

柴田啓介, 加藤慎也, 黒澤昌志, 後藤和泰, 宮本聡, 宇佐美徳隆, 黒川康良

第83回応用物理学会秋季学術講演会 

多結晶SiGe薄膜を用いた平面型熱電素子の作製と評価

小池壮太, 柳澤亮人, 黒澤昌志, Jha Rajveer, 辻井直人, 森孝雄, 野村政宏

第83回応用物理学会秋季学術講演会 

Sn-driven self-formation of Ge1−xSnx nanodots on insulator for multi-layered quantum dots structure International conference

K. Hashimoto, S. Shibayama, K. Asaka, M. Kurosawa, and O. Nakatsuka

9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX) 

Molecular beam epitaxy of CaGe2 layers on Si(111) substrate International conference

K. Okada, S. Shibayama, O. Nakatsuka, and M. Kurosawa

9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX) 

Investigation of electric and spin properties in germanium-based post graphene materials International conference

T. Nishijima, S. Kawa, Y. Ando, A. Ohta, J. Yuhara, M. Kurosawa, E. Shigematsu, R. Ohshima, and M. Shiraishi

IUMRS-ICYRAM2022 

Substrate engineering for strain-controlled high-Sn-content Ge1−xSnx epitaxy International conference

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

The 6th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2022 (APAC-Silicide 2022) 

Silicon Thermoelectric Energy Harvester Compatible with CMOS Technology International conference

T. Watanabe, M. Tomita, M. M. H. Mahfuz, M. Kurosawa, and T. Matsuki

2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 

Comparative Thermoelectric Performance Demonstration Between Cavity-free GeSn and Si Thermoelectric Generators

M. M. H. Mahfuz, K. Katayama, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe

第69回応用物理学会春季学術講演会 

Si1−xGexバッファ上におけるSi1−xSnx薄膜の結晶成長

藤本一彰, 黒澤昌志, 中塚理

第69回応用物理学会春季学術講演会 

高抵抗Si(111)基板上におけるCaGe2薄膜の形成

岡田和也, 伊藤麻維, 中塚理, 黒澤昌志

第69回応用物理学会春季学術講演会 

固相エピタキシャル成長法によるPドープSi1-xSnx薄膜の形成

大岩樹, 黒澤昌志, 中塚理

第69回応用物理学会春季学術講演会 

Formation of calcium disilicide films on Si(111) using molecular beam epitaxy International conference

Y. Ito, O. Nakatsuka, and M. Kurosawa

ISPlasma2022/IC-PLANTS2022 

Demonstration of Cavity-free GeSn Thermoelectric Generator International conference

K. Katayama, M. M. H. Mahfuz, M. Nakata, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe

2021 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (2021 IWDTF) 

Design of a planar-type uni-leg SiGe thermoelectric generator International conference

S. Koike, R. Yanagisawa, M. Kurosawa, and M. Nomura

International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021) 

超⾼圧下における多結晶PtN2膜の合成と特性評価

丹⽻健, 飯塚友規, ⿊澤昌志, 中村優⽃, 岸⽥英夫, 中塚理, 佐々⽊拓也, G. N. Alexander, ⻑⾕川正

第62回高圧討論会 

Thermoelectric properties of tin-incorporated group-IV thin films International conference

M. Kurosawa and O. Nakatsuka

240th ECS Meeting 

GaAs基板上におけるSi1−xSnx薄膜の結晶成長

藤本一彰, 黒澤昌志, 中塚理

第82回応用物理学会秋季学術講演会 

高抵抗基板上におけるCaGe2薄膜の作製

岡田和也, 伊藤麻衣, 中塚理, 黒澤昌志

第82回応用物理学会秋季学術講演会 

超高圧下で単結晶サファイア基板上に成長したPtN2膜の性状と物性

丹⽻健, 飯塚友規, ⿊澤昌志, 中村優⽃, 岸⽥英夫, 中塚理, 佐々⽊拓也, G. N. Alexander, ⻑⾕川正

日本金属学会 2021年秋期第169回講演大会 

SOI基板上におけるCaシリサイド層の形成

伊藤善常, 中塚理, 黒澤昌志

第82回応用物理学会秋季学術講演会 

透過型粉末X線回折による多層ゲルマナンの結晶構造評価

伊藤麻維, 洗平昌晃, 大田晃生, 中塚理, 黒澤昌志

第82回応用物理学会秋季学術講演会 

絶縁膜上におけるCaGe2の固相成長

大石遼, 中塚理, 黒澤昌志

第82回応用物理学会秋季学術講演会 

Group-IV materials grown on insulator for advanced thin-film thermoelectric applications International conference

M. Kurosawa and O. Nakatsuka

International Conference on Solid State Devices and Materials 2021 (SSDM2021) 

Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators International conference

R. Oishi, M. Kurosawa, and O. Nakatsuka

International Conference on Solid State Devices and Materials 2021 (SSDM2021) 

Hydrogen desorption from multilayer germanane flakes under an ultrahigh vacuum environment International conference

M. Itoh, M. Araidai, A. Ohta, O. Nakatsuka, and M. Kurosawa

International Conference on Solid State Devices and Materials 2021 (SSDM2021) 

Formation and Characterization of Ge1–x–YSixSny/Ge Hetero Junction Structures for Photovoltaic Cell Application International conference

O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima

239th ECS Meeting 

多結晶SiGe薄膜を用いた平面型ユニレグ熱電デバイスの作製と評価

小池壮太, 柳澤亮人, 黒澤昌志, 野村政宏

第68回応用物理学会春季学術講演会 

Si(001)基板上におけるSi1−xSnx薄膜のエピタキシャル成長

黒澤昌志, 丹下龍志, 中塚理

第68回応用物理学会春季学術講演会 

近接蒸着法によるCaGe2成膜とゲルマナンへの変換

原康祐, 國枝慎, 山中淳二, 有元圭介, 伊藤麻維, 黒澤昌志

第68回応用物理学会春季学術講演会 

SiGe薄膜熱電発電デバイス出力の膜厚依存性

小池壮太, 柳澤亮人, 黒澤昌志, 野村政宏

日本機械学会 熱工学コンファレンス2020 

Evaluation of Strain-Shift Coefficients for SiSn by Raman Spectroscopy International conference

R. Yokogawa, M. Kurosawa, and A. Ogura

PRiME 2020 

Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductors for Energy Band Design International conference

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

PRiME 2020 

Size effect of silicon nanocrystals on Seebeck coefficient of phosphorus-doped Si nanocrystals/silicon oxide multilayers International conference

H. Kobayashi, S. Kato, M. Kurosawa, K. Gotoh, N. Usami, and Y. Kurokawa

International Conference on Solid State Devices and Materials 2020 (SSDM2020) 

Ge1-xSnx溶融成長時に生じる偏析現象の理解

中尾天哉, 西島泰樹, 清水智, 角田功, 中塚理, 黒澤昌志

第81回応用物理学会秋季学術講演会 

多結晶SiGe薄膜を用いた平面型ユニレグ熱電デバイスの設計

小池壮太, 柳澤亮人, 黒澤昌志, 野村政宏

第81回応用物理学会秋季学術講演会 

多層ゲルマナンフレークからの水素脱離

伊藤麻維, 洗平昌晃, 大田晃生, 中塚理, 黒澤昌志

第81回応用物理学会秋季学術講演会 

GaAs(001)基板上におけるGe1−x−ySixSny 薄膜のエピタキシャル成長

中田壮哉, 詹天卓, 富田基裕, 渡邉孝信, 中塚理, 黒澤昌志

第81回応用物理学会秋季学術講演会 

絶縁膜上における極薄Ge薄膜の固相成長

大石遼, 黒澤昌志, 中塚理

第81回応用物理学会秋季学術講演会 

UVラマン分光法による単結晶Si1-xSnxの歪換算係数導出

横川凌, 丹下龍志, 黒澤昌志, 小椋厚志

第67回応用物理学会春季学術講演会 

絶縁膜上における極薄Ge1−xSnx薄膜の固相成長

大石遼, 中塚理, 黒澤昌志

第67回応用物理学会春季学術講演会 

Ge1−xSnx細線の偏析溶融成長：冷却速度の影響

中尾天哉, 西嶋泰樹, 清水智, 角田功, 中塚理, 黒澤昌志

第67回応用物理学会春季学術講演会 

SbドープGe1−x−ySixSny三元混晶薄膜の熱電物性制御

中田壮哉, 詹天卓, 富田基裕, 渡邉孝信, 中塚理, 黒澤昌志

第67回応用物理学会春季学術講演会 

GaドープSi1-xSnx薄膜で観測した巨大ゼーベック熱電能の理解

佐藤啓, 洗平昌晃, 中塚理, 黒澤昌志

第67回応用物理学会春季学術講演会 

近接蒸着法によるCaSi2とCaGe2の成膜

原康祐, 瀧澤周平, 山中淳二, 黒澤昌志, 有元圭介

第67回応用物理学会春季学術講演会 

多結晶SiGe薄膜を用いた熱電変換デバイスの設計

小池壮太, 柳澤亮人, 黒澤昌志, 野村政宏

第67回応用物理学会春季学術講演会 

多結晶Si1-x-yGexSny三元混晶薄膜の熱電特性制御

中塚理, 彭英, 苗蕾, 高杰, 刘呈燕, 黒澤昌志, 財満鎭明

電子デバイス界面テクノロジー研究会（第25回） 

分子線エピタキシー法による Si1-xSnx 薄膜の形成

丹下龍志, 黒澤昌志, 中塚理

電子デバイス界面テクノロジー研究会（第25回） 

In-situ Sb Doping into Ge1−xSnx Epitaxial Layer toward Enhancement of Photoluminescence Intensity International conference

M. Fukuda, J. Jeon, M. Sakashita, S. Shibayama, M. Kurosawa, and O. Nakatsuka

8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII) 

Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices International conference

O. Nakatsuka, M. Kurosawa, S. Shibayama, M. Sakashita and S. Zaima

8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII) 

Improvement of thermoelectric properties of Si1-x-yGexSny thin films by ion implantation and rapid thermal annealing International conference

Y. Peng, L. Miao, M. Kurosawa, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 

Theoretical Investigation of Self-organization Behavior of Si0.5Sn0.5 Nano-particles International conference

Y. Nagae, M. Kurosawa, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 

Thermoelectric properties of silicon germanium wires with a composition gradient International conference

M. Nakata, O. Nakatsuka, M. Tomita, T. Watanabe, and M. Kurosawa

International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development Satellite (iLIM-s) 

Optoelectronic Property of GeSn and GeSiSn Heterostructure International conference

M. Fukuda, M. Sakashita, S. Shibayama, M. Kurosawa, S. Zaima, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 

Growth of Hetero-epitaxial Al on Ge(111) and Segregation of Ge Crystal by Annealing International conference

M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki

32nd International Microprocesses and Nanotechnology Conference (MNC2019) 

白金二窒化物薄膜の超高圧合成と物性

飯塚友規，丹羽健，黒澤昌志, 佐々木拓也，中塚理，長谷川正

第60回高圧討論会 

Preparation of Ge1-xSnx-based Uni-leg Thermoelectric Generator International conference

M. Kurosawa, M. Tomita, and T. Watanabe

The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4) 

Power-conscious Energy Harvester Based on Si-CMOS Technology International conference

T. Watanabe, M. Tomita, Z. Tianzhuo, and M. Kurosawa

The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4) 

Temperature dependence of thermoelectric properties of Ge1−xSnx layers grown by molecular beam epitaxy International conference

M. Kurosawa, M. Nakata, K. Ide, T. Katase, and T. Kamiya

The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4) 

高濃度SbドープによるGe1-xSnxのフォトルミネッセンス発光強度の増大

福田雅大, 全智禧, 坂下満男, 柴山茂久, 黒澤昌志, 中塚理

第80回応用物理学会秋季学術講演会 

イオン注入法を用いた面内組成傾斜n型Si1-xGex細線の形成

中田壮哉, 西嶋大樹, 清水智, 角田功, 富田基裕, 渡邊孝信, 中塚理, 黒澤昌志

第80回応用物理学会秋季学術講演会 

偏析溶融成長法により形成した絶縁膜上Ge1-xSnx細線の電気特性評価

中尾天哉, 西嶋泰樹, 清水智, 角田功, 中塚理, 黒澤昌志

第80回応用物理学会秋季学術講演会 

Evaluation of Anisotropic Stress for Laterally Graded Silicon Germanium Wires by Raman Spectroscopy International conference

R. Yokogawa, K. Takahashi, M. Kurosawa, M. Tomita, T. Watanabe, and A. Ogura

18th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII) 

Influence of Dopant on Thermoelectric Properties of Si-rich Poly-Si1-xSnx Layers Grown on Insulators International conference

K. Sato, O. Nakatsuka, and M. Kurosawa

International Conference on Solid State Devices and Materials 2019 (SSDM2019) 

First-Principles Study on Formation of Freestanding Silicene and Germanene International conference

M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi

International Conference on Solid State Devices and Materials 2019 (SSDM2019) 

Preparation and thermoelectric characterization of phosphorus-doped silicon nanocrystals/silicon oxide multilayers International conference

H. Kobayashi, R. Akaishi, S. Kato, M. Kurosawa, N. Usami, and Y. Kurokawa

International Conference on Solid State Devices and Materials 2019 (SSDM2019) 

Growth of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface International conference

M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki

International Conference on Solid State Devices and Materials 2019 (SSDM2019) 

Germanene epitaxial growth by a segregation method on Ag(111) thin films International conference

J. Yuhara, H. Shimazu, K. Ito, A. Ohta, M. Araidai, M. Kurosawa, M. Nakatake, and G. Le Lay

From the NanoWorld to StarDust (NW2SD) International Conference 

GeSn and GeSiSn Heterostructures for Optoelectronic Applications International conference

O. Nakatsuka, M. Fukuda, M. Kurosawa, S. Shibayama, M. Sakashita, and S. Zaima

2019 IEEE Photonics Society Summer Topical Meeting Series 

組成傾斜シリコンゲルマニウム細線へのイオン注入ドーピング

中田壮哉, 西嶋大樹, 清水智, 角田功, 富田基裕, 渡邊孝信, 中塚理, 黒澤昌志

第3回応用物理学会フォノンエンジニアリング研究会 

熱処理によるAl/Ge(111)上の極薄Ge層形成

小林征登, 大田晃生, 黒澤昌志, 洗平昌晃, 田岡紀之, 池田弥央, 牧原克典, 宮﨑誠一

電子情報通信学会 シリコン材料・デバイス(SDM)研究会 

Development and challenges of group-IV alloy semiconductors for nanoelectronic applications International conference

S. Zaima, O. Nakatsuka, M. Kurosawa, M. Sakashita, and S. Shibayama

11th International Conference on High-Performance Ceramics (CICC-11) 

Tin-Incorporation Effect on Thermoelectric Properties of p-type Polycrysalline Si1-xGex layers grown on SiO2 International conference

Y. Peng, L. Miao, J. Gao, M. Kurosawa, O. Nakatsuka, and S. Zaima

11th International Conference on High-Performance Ceramics (CICC-11) 

Semi-ballistic thermal phonon transport in Si1-xGex nanowires International conference

N. Okamoto, R. Yanagisawa, M. M. Alam, K. Sawano, M. Kurosawa, and M. Nomura

Compound Semiconductor Week 2019 

架橋ゲルマネン形成に関する第一原理計算

洗平昌晃, 黒澤昌志, 大田晃生, 白石賢二

日本表面真空学会2019年度関東支部講演大会 

急速溶融成長法で作製されたSiGeワイヤの熱電特性

熊田剛大, 中村俊貴, 富田基裕, 中田壮哉, 高橋恒太, 黒澤昌志, 渡邉孝信

第66回応用物理学会春季学術講演会 

ヘテロエピタキシャルAl/Ge(111)上に偏析した極薄Geの化学分析

小林征登, 大田晃生, 黒澤昌志, 洗平昌晃, 田岡紀之, 池田弥央, 牧原克典, 宮﨑誠一

第66回応用物理学会春季学術講演会 

温度と組成に依存するSi1-xGexナノワイヤ中の準弾道的熱輸送

岡本昂, 柳澤亮人, Md. Mahfuz Alam, 澤野憲太郎, 黒澤昌志, 野村政宏

第66回応用物理学会春季学術講演会 

液浸ラマン分光法による組成傾斜SiGeワイヤの異方性二軸応力分布評価

横川凌, 高橋恒太, 富田基裕, 黒澤昌志, 渡邉孝信, 小椋厚志

第66回応用物理学会春季学術講演会 

ノンドープ組成傾斜SiGeワイヤの微小ゼーベック係数測定

熊田剛大, 中村俊貴, 富田基裕, 中田壮哉, 高橋恒太, 黒澤昌志, 渡邉孝信

電子デバイス界面テクノロジー研究会（第24回） 

GaSb(001)基板上に形成したSi1-xSnx薄膜の結晶構造評価

丹下龍志, 黒澤昌志, 中塚理, 財満鎭明

電子デバイス界面テクノロジー研究会（第24回） 

高Si組成Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造のエネルギーバンド構造および光電特性評価

福田雅大, 坂下満男, 柴山茂久, 黒澤昌志, 中塚理, 財満鎭明

電子デバイス界面テクノロジー研究会（第24回） 

偏析法によりAg(111)表面上に創製されたゲルマネンの構造評価

志満津宏樹, 柚原淳司, 仲武昌史, 伊藤公一, 大田晃生, 洗平昌晃, 黒澤昌志, Guy Le Lay

第18回日本表面真空学会中部支部学術講演会 

Ge 2D Crystal Growth on Hetero-epitaxial Ag/Ge(111) by N2 Annealing International conference

A. Ohta, K. Ito, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

49th IEEE Semiconductor Interface Specialists Conference (SISC) 

GeSn-related group-IV semiconductor heterostructures for electronic and optoelectronic applications International conference

O. Nakatsuka, M. Fukuda, M. Kurosawa, M. Sakashita, and S. Zaima

12th International WorkShop on New Group IV Semiconductor Nanoelectronics 

エピタキシャルAl/Ge(111)の形成と真空中熱処理による表面平坦化およびGe析出

小林征登, 大田晃生, 黒澤昌志, 洗平昌晃, 田岡紀之, 池田弥央, 牧原克典, 宮﨑誠一

第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

GaSb(001)基板上におけるSi1-xSnx薄膜の固相成長

丹下龍志, 黒澤昌志, 中塚理, 財満鎭明

第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

First-Principles Study on Hydrogen Adsorption and Desorption of Silicene and Germanene International conference

M. Araidai, M. Kurosawa, A. Ohta, K. Shiraishi

14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26) 

Formation and Optoelectronic Characterization of Strain-relaxed Ge1−x−ySixSny/Ge1−xSnx/Ge1−x−ySixSny Double-heterostructure International conference

M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26) 

Thermoelectric Performance of Polycrystalline Si1-x-yGexSny Ternary Alloy Layer Prepared with Ion Implantation International conference

Y. Peng, M. Kurosawa, O. Nakatsuka, J. Gao, L. Miao, and S. Zaima

14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26) 

次世代半導体デバイスに向けたIV族混晶薄膜の形成と物性制御

高橋恒太, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明

第10回半導体材料・デバイスフォーラム 

First-principles study on hydrogen adsorption-desorption property and simulated STM Images of germanene

M. Araidai, M. Kurosawa, A. Ohta, K. Shiraishi

第２回 ポストグラフェン材料のデバイス開発研究会 

Why chose a diffusion method towards creation of silicene & germanene?

M. Kurosawa, A. Ohta, and M. Araidai

第２回 ポストグラフェン材料のデバイス開発研究会 

Two dimensional Ge crystal growth by annealing of Metal/Ge stack

A. Ohta, K. Ito, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

第２回 ポストグラフェン材料のデバイス開発研究会 

Composition and Strain Engineering of New Group-IV Thermoelectric Materials International conference

M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

AiMES 2018 Meeting 

Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices fabricated by Rapid Melting Growth International conference

R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, and A. Ogura

AiMES 2018 Meeting 

Formation of laterally graded SixGe1-x stripes for thermoelectric generator International conference

M. Nakata, K. Takahashi, T. Nishijima, S. Shimizu, I. Tsunoda, O. Nakatsuka, S. Zaima, T. Watanabe, and M. Kurosawa

The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3) 

真空蒸着によるGe(111)上のAlヘテロエピタキシャル成長

小林征登, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮﨑誠一

第79回応用物理学会秋季学術講演会 

スマートウォッチを支える熱電デバイスについて考える

黒澤昌志

第79回応用物理学会秋季学術講演会 

溶融成長法によるGe1-xSnx細線の形成と電気特性評価

髙橋恒太, 今井祐太, 西嶋泰樹, 清水智, 黒澤昌志, 角田功, 中塚理, 財満鎭明

第79回応用物理学会秋季学術講演会 

熱電特性評価に向けた組成傾斜SixGe1-x細線の形成

中田壮哉, 髙橋恒太, 西嶋泰樹, 清水智, 角田功, 中塚理, 財満鎭明, 渡邉孝信, 黒澤昌志

第79回応用物理学会秋季学術講演会 

SiO2上に形成したGe1-xSnx多結晶薄膜の熱電特性評価

今井志明, 髙橋恒太, 中塚理, 財満鎭明, 黒澤昌志

第79回応用物理学会秋季学術講演会 

GaSb基板上におけるSi1-xSnx薄膜の結晶成長

丹下龍志, 黒澤昌志, 中塚理, 財満鎭明

第79回応用物理学会秋季学術講演会 

高Si組成歪緩和Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造の形成および光電特性評価

福田雅大, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明

第79回応用物理学会秋季学術講演会 

Ag(111)表面上に偏析したGe原子が形成する二次元構造

志満津宏樹, 柚原淳司, 仲武昌史, 伊藤公一, 大田晃生, 洗平昌晃, 黒澤昌志

日本物理学会 2018年秋季大会 

IV族混晶薄膜の結晶成長と熱電デバイスへの応用

黒澤昌志

第68回フロンティア材料研究所学術講演会「革新的エナジーハーベスティングに向けた創エネルギー材料とデバイスの研究開発」 

Thin film growth and characterization of group-IV alloy semiconductors for future nanoelectronic applications International conference

O. Nakatsuka, M. Kurosawa, and S. Zaima

9th International Conference on Physics and Its Applications (ICOPIA) 

単結晶p型Ge0.95Sn0.05薄膜の熱電特性におけるドメインサイズの効果

今井志明, 髙橋恒太, 内田紀行, 前田辰郎, 中塚理, 財満鎭明, 黒澤昌志

第2回フォノンエンジニアリング研究グループ研究会 

多結晶Ge1-xSnx薄膜熱電素子の低温形成

髙橋恒太, 池上浩, 坂下満男, 中塚理, 財満鎭明, 黒澤昌志

第2回フォノンエンジニアリング研究グループ研究会 

Engineering optoelectronic properties of high-Sn-content GeSn, GeSiSn, and SiSn thin films International conference

O. Nakatsuka, M. Kurosawa, M. Fukuda, M. Sakashita, W. Takeuchi, and S. Zaima

IEEE Photonics Society Summer Topical Meeting Series 2018 

GeSn-based thin film thermoelectric generators International conference

M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (THERMEC'2018) 

Engineering electronic properties of GeSn-related group-IV thin films for nanoelectronic applications International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

2018 E-MRS Spring Meeting 

Optoelectronic Characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure with High-Si-Content Ge1-x-ySixSny Layer International conference

M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima

1st Joint ISTDM/ICSI 2018 Conference 

Ultra-thin GeSn on Insulator structure through the direct bonding technique International conference

T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, M. Kurosawa, Y. Imai, O. Nakatsuka, and N. Uchida

1st Joint ISTDM/ICSI 2018 Conference 

革新的多機能センサモジュール実現に向けた新しいIV族混晶熱電物質の創製　〜ド素人が熱電の分野に飛び込んで〜

黒澤昌志

" 日本熱電学会 第23回研究会「注目の熱電プロジェクト」 

ゲルマネンの水素吸脱着に関する第一原理計算

洗平昌晃, 黒澤昌志, 大田晃生, 白石賢二

日本物理学会　第73回年次大会（2018年） 

熱電デバイス用組成傾斜SiGeワイヤの構造評価

横川凌, 橋本修一郎, 高橋恒太, 大場俊輔, 富田基裕, 黒澤昌志, 渡邉孝信, 小椋厚志

第65回応用物理学会春季学術講演会 

IV族混晶のマイクロ熱電発電デバイス応用

渡邉孝信, 橋本修一郎, 富田基裕, 黒澤昌志, 池田浩也

第65回応用物理学会春季学術講演会 

熱処理によるエピタキシャルAg/Ge(111)構造の表面平坦化とGe析出量制御

伊藤公一, 大田晃生, 黒澤昌志, 洗平昌晃, 池田弥央, 牧原克典, 宮﨑誠一

第65回応用物理学会春季学術講演会 

Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造の光電特性評価

福田雅大, Denis Rainko, 坂下満男, 黒澤昌志, Dan Buca, 中塚理, 財満鎭明

第65回応用物理学会春季学術講演会 

ドーパント種が水中パルスレーザアニールによるGe1-xSnx薄膜への高濃度ドーピングに及ぼす効果

髙橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明

第65回応用物理学会春季学術講演会 

Domain size effects on thermoelectric properties of p-type Ge0.95Sn0.05 layers grown on GaAs and Si substrates International conference

Y. Imai, K. Takahashi, N. Uchida, T. Maeda, O. Nakatsuka, S. Zaima, and M. Kurosawa

2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2018) 

Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator International conference

K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa

2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2018) 

Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment International conference

S. Hashimoto, K. Takahashi, S. Oba, T. Terada, M. Ogasawara, M. Tomita, M. Kurosawa, and T. Watanabe

2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2018) 

Heavily p-type doping to Si1-xSnx layers grown on SOI substrates International conference

Y. Inaishi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

ISPlasma2018/IC-PLANTS2018 

Crystal growth of GeSn-based materials and its application for thin-film thermoelectric generators International conference

M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

2017 Global Research Efforts on Energy and Nanomaterials (GREEN 2017) 

Ultrathin Ge Growth on Flat Ag Surface in Hetero-Epitaxial Ag/Ge Structure by Annealing International conference

K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

The 30th International Microprocesses and Nanotechnology Conference (MNC 2017) 

Ultrathin Ge Growth on Ag Surface by Annealing of Hetero-Epitaxial Ag/Ge(111) International conference

A. Ohta, K. Ito, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

8th International Symposium on Surface Science (ISSS-8) 

Growth and Applications of Si1-xSnx Thin Films International conference

M. Kurosawa, O. Nakatsuka, and S. Zaima

232nd Electrochemical Society Meeting 

Characterization of Crystallinity and Energy Band Alignment of Ge1-xSnx/Ge1-x-ySixSny Heterostructure International conference

M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS2017) 

Crystal Growth of Ultrathin Si and Ge Layers on Ag Surfaces International conference

M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima

The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2)