Observation of 2D-magnesium-intercalated gallium nitride superlattices

Wang, J; Cai, WT; Lu, WF; Lu, S; Kano, E; Agulto, VC; Sarkar, B; Watanabe, H; Ikarashi, N; Iwamoto, T; Nakajima, M; Honda, Y; Amano, H

NATURE   Vol. 631 ( 8019 ) page： 67 - +   2024.7

Observation of 2D-magnesium-intercalated gallium nitride superlattices

Wang, J; Cai, WT; Lu, WF; Lu, S; Kano, E; Agulto, VC; Sarkar, B; Watanabe, H; Ikarashi, N; Iwamoto, T; Nakajima, M; Honda, Y; Amano, H

NATURE     2024.6

Metal Stop Laser Drilling for Blind via Holes of GaN-on-GaN Devices

Sasaoka, C; Ando, Y; Takahashi, H; Ikarashi, N; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 220 ( 16 )   2023.8

Over 200 cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP> of electron inversion channel mobility for AlSiO/GaN MOSFET with nitrided interface

Ito, K; Iwasaki, S; Tomita, K; Kano, E; Ikarashi, N; Kataoka, K; Kikuta, D; Narita, T

APPLIED PHYSICS EXPRESS   Vol. 16 ( 7 )   2023.7

Pressure Effect on Diffusion of Native Defects and Mg Impurity in Mg-Ion-Implanted GaN during Ultrahigh-Pressure Annealing Reviewed International coauthorship International journal

Kano, E; Otsuki, R; Kobayashi, K; Kataoka, K; Sierakowski, K; Bockowski, M; Nagao, M; Narita, T; Kachi, T; Ikarashi, N

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 17 ( 7 )   2023.7

Fabrication of <i>β</i>-Mn type Co-Zn-Mn(001) film on MgO single crystal substrate

Oshima, D; Kato, T; Ikarashi, N; Nagao, M

AIP ADVANCES   Vol. 13 ( 2 )   2023.2

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Uedono, A; Sakurai, H; Uzuhashi, J; Narita, T; Sierakowski, K; Ishibashi, S; Chichibu, SF; Bockowski, M; Suda, J; Ohkubo, T; Ikarashi, N; Hono, K; Kachi, T

GALLIUM NITRIDE MATERIALS AND DEVICES XVIII   Vol. 12421   2023

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Kachi, T; Narita, T; Sakurai, H; Matys, M; Kataoka, K; Hirukawa, K; Sumida, K; Horita, M; Ikarashi, N; Sierakowski, K; Bockowski, M; Suda, J

JOURNAL OF APPLIED PHYSICS   Vol. 132 ( 13 )   2022.10

Effect of Ultra-High-Pressure Annealing on Defect Reactions in Ion-Implanted GaN Studied by Positron Annihilation

Uedono, A; Sakurai, H; Uzuhashi, J; Narita, T; Sierakowski, K; Ishibashi, S; Chichibu, SF; Bockowski, M; Suda, J; Ohkubo, T; Ikarashi, N; Hono, K; Kachi, T

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 259 ( 10 )   2022.10

Nanoscale Characteristics of a Room-Temperature Coexisting Phase of Magnetic Skyrmions and Antiskyrmions for Skyrmion-Antiskyrmion-Based Spintronic Applications

Shimizu, D; Nagase, T; So, YG; Kuwahara, M; Ikarashi, N; Nagao, M

ACS APPLIED NANO MATERIALS   Vol. 5 ( 9 ) page： 13519 - 13528   2022.9

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation Reviewed International coauthorship International journal

Kano, E; Kataoka, K; Uzuhashi, J; Chokawa, K; Sakurai, H; Uedono, A; Narita, T; Sierakowski, K; Bockowski, M; Otsuki, R; Kobayashi, K; Itoh, Y; Nagao, M; Ohkubo, T; Hono, K; Suda, J; Kachi, T; Ikarashi, N

JOURNAL OF APPLIED PHYSICS   Vol. 132 ( 6 )   2022.8

Elucidation of PVD MoS₂ film formation process and its structure focusing on sub-monolayer region Reviewed

Ono, R; Imai, S; Kusama, Y; Hamada, T; Hamada, M; Muneta, I; Kakushima, K; Tsutsui, K; Kano, E; Ikarashi, N; Wakabayashi, H

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SC )   2022.5

Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN Reviewed

Itoh, Y; Watanabe, H; Ando, Y; Kano, E; Deki, M; Nitta, S; Honda, Y; Tanaka, A; Ikarashi, N; Amano, H

APPLIED PHYSICS EXPRESS   Vol. 15 ( 2 )   2022.2

Effects of the sequential implantation of Mg and N ions into GaN for p-type doping Reviewed

Sakurai, H; Narita, T; Kataoka, K; Hirukawa, K; Sumida, K; Yamada, S; Sierakowski, K; Horita, M; Ikarashi, N; Bockowski, M; Suda, J; Kachi, T

APPLIED PHYSICS EXPRESS   Vol. 14 ( 11 )   2021.11

Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates Reviewed

Hamachi, T; Tohei, T; Hayashi, Y; Imanishi, M; Usami, S; Mori, Y; Ikarashi, N; Sakai, A

JOURNAL OF APPLIED PHYSICS   Vol. 129 ( 22 )   2021.6

Observation of domain wall bimerons in chiral magnets Reviewed

Nagase, T; So, YG; Yasui, H; Ishida, T; Yoshida, HK; Tanaka, Y; Saitoh, K; Ikarashi, N; Kawaguchi, Y; Kuwahara, M; Nagao, M

NATURE COMMUNICATIONS   Vol. 12 ( 1 )   2021.6

Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration Reviewed International coauthorship International journal

Nakashima, T; Kano, E; Kataoka, K; Arai, S; Sakurai, H; Narita, T; Sierakowski, K; Bockowski, M; Nagao, M; Suda, J; Kachi, T; Ikarashi, N

APPLIED PHYSICS EXPRESS   Vol. 14 ( 1 )   2021.1

Wurtzite AlP<i>_y</i>N_1-<i>y</i>: a new III-V compound semiconductor lattice-matched to GaN (0001) Reviewed International coauthorship International journal

Pristovsek, M; Dinh, DV; Liu, T; Ikarashi, N

APPLIED PHYSICS EXPRESS   Vol. 13 ( 11 )   2020.11

Progress on and challenges of p-type formation for GaN power devices Reviewed International coauthorship

Narita, T; Yoshida, H; Tomita, K; Kataoka, K; Sakurai, H; Horita, M; Bockowski, M; Ikarashi, N; Suda, J; Kachi, T; Tokuda, Y

JOURNAL OF APPLIED PHYSICS   Vol. 128 ( 9 )   2020.9

Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing

Sakurai, H; Narita, T; Omori, M; Yamada, S; Koura, A; Iwinska, M; Kataoka, K; Horita, M; Ikarashi, N; Bockowski, M; Suda, J; Kachi, T

APPLIED PHYSICS EXPRESS   Vol. 13 ( 8 )   2020.8

Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N₂ partial pressure annealing: Transmission electron microscopy analysis Reviewed International coauthorship International journal

Iwata, K; Sakurai, H; Arai, S; Nakashima, T; Narita, T; Kataoka, K; Bockowski, M; Nagao, M; Suda, J; Kachi, T; Ikarashi, N

JOURNAL OF APPLIED PHYSICS   Vol. 127 ( 10 )   2020.3

Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices Reviewed International coauthorship

Narita, T; Tomita, K; Kataoka, K; Tokuda, Y; Kogiso, T; Yoshida, H; Ikarashi, N; Iwata, K; Nagao, M; Sawada, N; Horita, M; Suda, J; Kachi, T

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.1

Impacts of high temperature annealing above 1400 °C under N₂ overpressure to activate acceptors in Mg-implanted GaN Reviewed International coauthorship

Sakurai, H; Narita, T; Hirukawa, K; Yamada, S; Koura, A; Kataoka, K; Horita, M; Ikarashi, N; Bockowski, M; Suda, J; Kachi, T

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page： 321 - 324   2020

Smectic Liquid-Crystalline Structure of Skyrmions in Chiral Magnet Co_8.5Zn_7.5Mn₄(110) Thin Film Reviewed

Nagase, T; Komatsu, M; So, YG; Ishida, T; Yoshida, H; Kawaguchi, Y; Tanaka, Y; Saitoh, K; Ikarashi, N; Kuwahara, M; Nagao, M

PHYSICAL REVIEW LETTERS   Vol. 123 ( 13 )   2019.9

Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO_2-x Memristive Devices Reviewed

Nagata, Z; Shimizu, T; Isaka, T; Tohei, T; Ikarashi, N; Sakai, A

SCIENTIFIC REPORTS   Vol. 9   2019.7

Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition Reviewed

Isobe, Y; Sakai, T; Sugiyama, N; Mizushima, I; Suguro, K; Miyashita, N; Lu, Y; Wilson, AF; Kumar, DA; Ikarashi, N; Kondo, H; Ishikawa, K; Shimizu, N; Oda, O; Sekine, M; Hori, M

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 37 ( 3 )   2019.5

Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer Reviewed International coauthorship International journal

Iwata, K; Narita, T; Nagao, M; Tomita, K; Kataoka, K; Kachi, T; Ikarashi, N

APPLIED PHYSICS EXPRESS   Vol. 12 ( 3 )   2019.3

Demonstrative operation of four terminal memristive devices fabricated on reduced TiO₂ single crystals Reviewed

Takeuchi, S; Shimizu, T; Isaka, T; Tohei, T; Ikarashi, N; Sakai, A

SCIENTIFIC REPORTS   Vol. 9   2019.2

Single-Step, Low-Temperature Simultaneous Formations and in Situ Binding of Tin Oxide Nanoparticles to Graphene Nanosheets by In-Liquid Plasma for Potential Applications in Gas Sensing and Lithium-Ion Batteries

Borude, RR; Sugiura, H; Ishikawa, K; Tsutsumi, T; Kondo, H; Ikarashi, N; Hori, M

ACS APPLIED NANO MATERIALS   Vol. 2 ( 2 ) page： 649 - 654   2019.2

Low-Temperature MoS₂ Film Formation Using Sputtering and H₂S Annealing

Shimizu, J; Ohashi, T; Matsuura, K; Muneta, I; Kakushima, K; Tsutsui, K; Ikarashi, N; Wakabayashi, H

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 7 ( 1 ) page： 2 - 6   2019

Effect of N₂/H₂ plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)

Amalraj, FW; Dhasiyan, AK; Lu, Y; Shimizu, N; Oda, O; Ishikawa, K; Kondo, H; Sekine, M; Ikarashi, N; Hori, M

AIP ADVANCES   Vol. 8 ( 11 )   2018.11

Wide range doping control and defect characterization of GaN layers with various Mg concentrations

Narita, T; Ikarashi, N; Tomita, K; Kataoka, K; Kachi, T

JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 16 )   2018.10

Analysis of Ti valence states in resistive switching regions of a rutile TiO_2-<i>x</i> four-terminal memristive device

Yamaguchi, K; Takeuchi, S; Tohei, T; Ikarashi, N; Sakai, A

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

Mechanism for High Hall-Effect Mobility in Sputtered-MoS₂ Film Controlling Particle Energy

Sakamoto, T; Ohashi, T; Matsuura, K; Muneta, I; Kakushima, K; Tsutsui, K; Suzuki, Y; Ikarashi, N; Wakabayashi, H

2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)     2018

III-nitride core-shell nanorod array on quartz substrates

Bae, SY; Min, JW; Hwang, HY; Lekhal, K; Lee, HJ; Jho, YD; Lee, DS; Lee, YT; Ikarashi, N; Honda, Y; Amano, H

SCIENTIFIC REPORTS   Vol. 7   2017.3

Low-carrier density sputtered-MoS₂ film by H₂S annealing for normally-off accumulation-mode FET

Shimizu, J; Ohashi, T; Matsuura, K; Muneta, I; Kakushima, K; Tsutsui, K; Ikarashi, N; Wakabayashi, H

2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)     page： 222 - 223   2017

In-situ electron holography of carrier accumulation at SiO2/InGaZnO4 interface, Reviewed

Nobuyuki Ikarashi, Kisyoh Kaneko, Motofumi Saitoh, and Hiroshi Takeda

Jpn. J. Appl. Phys.   Vol. 53   page： 031101   2014

In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor Reviewed

Nobuyuki Ikarashi, Hiroshi Takeda, Koichi Yako, and Masami Hane

Appl. Phys. Lett.   Vol. 100   page： 101912   2012

Silicide formation process of Pt added Ni at low temperature: Control of NiSi2 formation Reviewed

Nobuyuki Ikarashi and Koji Masuzaki,

J. Appl. Phys.   Vol. 109   page： 063506   2011

Direct Two-Dimensional Electrostatic Potential Cross-sectional Mapping of Sub-30-nm MOSFET under Operation Mode Using Electron Holography Reviewed

Nobuyuki Ikarashi, Hiroshi Takeda, Koichi Yako, and Masami Hane

IEEE International Electron Devices Meeting 2011 Tech. Digest     2011

Electron holography for analysis of deep submicron devices: Present status and challenges Reviewed

Nobuyuki Ikarashi, Akio Toda, Kazuya Uejima, Koichi Yako, Toyoji Yamamoto, Masami Hane, and Hiroshi Sato

J. Vac. Sci. Technol. B   Vol. 28   page： C1D5   2010

Atomic structure of a Ni diffused Si (001) surface layer: Precursor to formation of NiSi2 at low temperature Reviewed

J. Appl. Phys   Vol. 107   page： 033505   2010