Updated on 2022/03/24

写真a

 
IKARASHI Nobuyuki
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Materials Nano-Characterization Section Professor
Graduate School
Graduate School of Engineering
Title
Professor
Contact information
メールアドレス
External link

Degree 1

  1. 博士(理学) ( 1997.9   東京工業大学 ) 

Research Interests 5

  1. cryatalographic defects

  2. device phisics

  3. atomically thin materials

  4. electron microscopy

  5. semiconductor physics

Research Areas 3

  1. Others / Others  / デバイス物理学

  2. Others / Others  / 物性解析

  3. Others / Others  / 表面・界面

Current Research Project and SDGs 1

  1. ultra low power consumption devices

Research History 4

  1. 名古屋大学・教授

    2015

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    Country:Japan

  2. ルネサスエレクトロニクス

    2011 - 2015

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    Country:Japan

  3. 東京工業大・連携大学院准教授

    2008 - 2015

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    Country:Japan

  4. 日本電気株式会社

    1988 - 2011

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    Country:Japan

Education 1

  1. Tokyo Institute of Technology   Graduate School, Division of Science and Engineering

    - 1988.3

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    Country: Japan

Professional Memberships 2

  1. The Japanese Society of Microscopy

    2003.4

  2. 公益社団法人 応用物理学会   会員

 

Papers 31

  1. Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region Reviewed

    Ono Ryo, Imai Shinya, Kusama Yuta, Hamada Takuya, Hamada Masaya, Muneta Iriya, Kakushima Kuniyuki, Tsutsui Kazuo, Kano Emi, Ikarashi Nobuyuki, Wakabayashi Hitoshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SC )   2022.5

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    Language:Japanese  

    DOI: 10.35848/1347-4065/ac3fc9

    Web of Science

  2. Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN Reviewed

    Itoh Yuta, Watanabe Hirotaka, Ando Yuto, Kano Emi, Deki Manato, Nitta Shugo, Honda Yoshio, Tanaka Atsushi, Ikarashi Nobuyuki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 2 )   2022.2

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    Language:Japanese  

    DOI: 10.35848/1882-0786/ac481b

    Web of Science

  3. Effects of the sequential implantation of Mg and N ions into GaN for p-type doping Reviewed

    Sakurai Hideki, Narita Tetsuo, Kataoka Keita, Hirukawa Kazufumi, Sumida Kensuke, Yamada Shinji, Sierakowski Kacper, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 11 )   2021.11

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    Language:Japanese  

    DOI: 10.35848/1882-0786/ac2ae7

    Web of Science

  4. Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates Reviewed

    Hamachi T., Tohei T., Hayashi Y., Imanishi M., Usami S., Mori Y., Ikarashi N., Sakai A.

    JOURNAL OF APPLIED PHYSICS   Vol. 129 ( 22 )   2021.6

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    Language:Japanese  

    DOI: 10.1063/5.0053766

    Web of Science

  5. Observation of domain wall bimerons in chiral magnets Reviewed

    Nagase Tomoki, So Yeong-Gi, Yasui Hayata, Ishida Takafumi, Yoshida Hiroyuki K., Tanaka Yukio, Saitoh Koh, Ikarashi Nobuyuki, Kawaguchi Yuki, Kuwahara Makoto, Nagao Masahiro

    NATURE COMMUNICATIONS   Vol. 12 ( 1 )   2021.6

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  6. Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration Reviewed International coauthorship

    Nakashima Takuya, Kano Emi, Kataoka Keita, Arai Shigeo, Sakurai Hideki, Narita Tetsuo, Sierakowski Kacper, Bockowski Michal, Nagao Masahiro, Suda Jun, Kachi Tetsu, Ikarashi Nobuyuki

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 1 )   2021.1

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    Language:Japanese  

    Web of Science

  7. Wurtzite AlPyN1-y: a new III-V compound semiconductor lattice-matched to GaN (0001) Reviewed International coauthorship

    Pristovsek Markus, van Dinh Duc, Liu Ting, Ikarashi Nobuyuki

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 11 )   2020.11

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    Language:Japanese  

    DOI: 10.35848/1882-0786/abbbca

    Web of Science

  8. Progress on and challenges of p-type formation for GaN power devices Reviewed International coauthorship

    Narita Tetsuo, Yoshida Hikaru, Tomita Kazuyoshi, Kataoka Keita, Sakurai Hideki, Horita Masahiro, Bockowski Michal, Ikarashi Nobuyuki, Suda Jun, Kachi Tetsu, Tokuda Yutaka

    JOURNAL OF APPLIED PHYSICS   Vol. 128 ( 9 )   2020.9

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    Language:Japanese  

    DOI: 10.1063/5.0022198

    Web of Science

  9. Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing

    Sakurai Hideki, Narita Tetsuo, Omori Masato, Yamada Shinji, Koura Akihiko, Iwinska Malgorzata, Kataoka Keita, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 8 )   2020.8

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    Language:Japanese  

    Web of Science

  10. Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N-2 partial pressure annealing: Transmission electron microscopy analysis Reviewed International coauthorship

    Iwata Kenji, Sakurai Hideki, Arai Shigeo, Nakashima Takuya, Narita Tetsuo, Kataoka Keita, Bockowski Michel, Nagao Masaharu, Suda Jun, Kachi Tetsu, Ikarashi Nobuyuki

    JOURNAL OF APPLIED PHYSICS   Vol. 127 ( 10 )   2020.3

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    Language:Japanese  

    DOI: 10.1063/1.5140410

    Web of Science

  11. Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices Reviewed International coauthorship

    Narita Tetsuo, Tomita Kazuyoshi, Kataoka Keita, Tokuda Yutaka, Kogiso Tatsuya, Yoshida Hikaru, Ikarashi Nobuyuki, Iwata Kenji, Nagao Masahiro, Sawada Naoki, Horita Masahiro, Suda Jun, Kachi Tetsu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.1

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    Language:Japanese  

    DOI: 10.7567/1347-4065/ab4610

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  12. Impacts of high temperature annealing above 1400 degrees C under N-2 overpressure to activate acceptors in Mg-implanted GaN Reviewed International coauthorship

    Sakurai Hideki, Narita Tetsuo, Hirukawa Kazufumi, Yamada Shinji, Koura Akihiko, Kataoka Keita, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page: 321 - 324   2020

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    Language:English  

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  13. Smectic Liquid-Crystalline Structure of Skyrmions in Chiral Magnet Co8.5Zn7.5Mn4(110) Thin Film Reviewed

    Nagase T., Komatsu M., So Y. G., Ishida T., Yoshida H., Kawaguchi Y., Tanaka Y., Saitoh K., Ikarashi N., Kuwahara M., Nagao M.

    PHYSICAL REVIEW LETTERS   Vol. 123 ( 13 )   2019.9

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  14. Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2-x Memristive Devices Reviewed

    Nagata Zenya, Shimizu Takuma, Isaka Tsuyoshi, Tohei Tetsuya, Ikarashi Nobuyuki, Sakai Akira

    SCIENTIFIC REPORTS   Vol. 9   2019.7

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  15. Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition Reviewed

    Isobe Yasuhiro, Sakai Takayuki, Sugiyama Naoharu, Mizushima Ichiro, Suguro Kyoichi, Miyashita Naoto, Lu Yi, Wilson Amalraj Frank, Kumar Dhasiyan Arun, Ikarashi Nobuyuki, Kondo Hiroki, Ishikawa Kenji, Shimizu Naohiro, Oda Osamu, Sekine Makoto, Hori Masaru

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 37 ( 3 )   2019.5

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    Language:Japanese  

    DOI: 10.1116/1.5083970

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  16. Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer Reviewed International coauthorship

    Iwata Kenji, Narita Tetsuo, Nagao Masahiro, Tomita Kazuyoshi, Kataoka Keita, Kachi Tetsu, Ikarashi Nobuyuki

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 3 )   2019.3

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    Authorship:Last author   Language:English  

    DOI: 10.7567/1882-0786/ab04f1

    Web of Science

  17. Demonstrative operation of four terminal memristive devices fabricated on reduced TiO2 single crystals Reviewed

    Takeuchi Shotaro, Shimizu Takuma, Isaka Tsuyoshi, Tohei Tetsuya, Ikarashi Nobuyuki, Sakai Akira

    SCIENTIFIC REPORTS   Vol. 9   2019.2

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  18. Single-Step, Low-Temperature Simultaneous Formations and in Situ Binding of Tin Oxide Nanoparticles to Graphene Nanosheets by In-Liquid Plasma for Potential Applications in Gas Sensing and Lithium-Ion Batteries

    Borude Ranjit R., Sugiura Hirotsugu, Ishikawa Kenji, Tsutsumi Takayoshi, Kondo Hiroki, Ikarashi Nobuyuki, Hori Masaru

    ACS APPLIED NANO MATERIALS   Vol. 2 ( 2 ) page: 649 - 654   2019.2

  19. Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing

    Shimizu Jun'ichi, Ohashi Takumi, Matsuura Kentaro, Muneta Iriya, Kakushima Kuniyuki, Tsutsui Kazuo, Ikarashi Nobuyuki, Wakabayashi Hitoshi

    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 7 ( 1 ) page: 2 - 6   2019

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    Language:Japanese  

    DOI: 10.1109/JEDS.2018.2854633

    Web of Science

  20. Effect of N-2/H-2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)

    Amalraj Frank Wilson, Dhasiyan Arun Kumar, Lu Yi, Shimizu Naohiro, Oda Osamu, Ishikawa Kenji, Kondo Hiroki, Sekine Makoto, Ikarashi Nobuyuki, Hori Masaru

    AIP ADVANCES   Vol. 8 ( 11 )   2018.11

  21. Wide range doping control and defect characterization of GaN layers with various Mg concentrations

    Narita Tetsuo, Ikarashi Nobuyuki, Tomita Kazuyoshi, Kataoka Keita, Kachi Tetsu

    JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 16 )   2018.10

  22. Analysis of Ti valence states in resistive switching regions of a rutile TiO2-x four-terminal memristive device

    Yamaguchi Kengo, Takeuchi Shotaro, Tohei Tetsuya, Ikarashi Nobuyuki, Sakai Akira

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

  23. Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy

    Sakamoto Takuro, Ohashi Takumi, Matsuura Kentaro, Muneta Iriya, Kakushima Kuniyuki, Tsutsui Kazuo, Suzuki Yuuta, Ikarashi Nobuyuki, Wakabayashi Hitoshi

    2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)     2018

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  24. III-nitride core-shell nanorod array on quartz substrates

    Bae Si-Young, Min Jung-Wook, Hwang Hyeong-Yong, Lekhal Kaddour, Lee Ho-Jun, Jho Young-Dahl, Lee Dong-Seon, Lee Yong-Tak, Ikarashi Nobuyuki, Honda Yoshio, Amano Hiroshi

    SCIENTIFIC REPORTS   Vol. 7   2017.3

  25. Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET

    Shimizu Jun'ichi, Ohashi Takumi, Matsuura Kentaro, Muneta Iriya, Kakushima Kuniyuki, Tsutsui Kazuo, Ikarashi Nobuyuki, Wakabayashi Hitoshi

    2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)     page: 222 - 223   2017

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  26. In-situ electron holography of carrier accumulation at SiO2/InGaZnO4 interface, Reviewed

    Nobuyuki Ikarashi, Kisyoh Kaneko, Motofumi Saitoh, and Hiroshi Takeda

    Jpn. J. Appl. Phys.   Vol. 53   page: 031101   2014

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  27. In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor Reviewed

    Nobuyuki Ikarashi, Hiroshi Takeda, Koichi Yako, and Masami Hane

    Appl. Phys. Lett.   Vol. 100   page: 101912   2012

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  28. Silicide formation process of Pt added Ni at low temperature: Control of NiSi2 formation Reviewed

    Nobuyuki Ikarashi and Koji Masuzaki,

    J. Appl. Phys.   Vol. 109   page: 063506   2011

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  29. Direct Two-Dimensional Electrostatic Potential Cross-sectional Mapping of Sub-30-nm MOSFET under Operation Mode Using Electron Holography Reviewed

    Nobuyuki Ikarashi, Hiroshi Takeda, Koichi Yako, and Masami Hane

    IEEE International Electron Devices Meeting 2011 Tech. Digest     2011

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/IEDM.2011.6131499

  30. Electron holography for analysis of deep submicron devices: Present status and challenges Reviewed

    Nobuyuki Ikarashi, Akio Toda, Kazuya Uejima, Koichi Yako, Toyoji Yamamoto, Masami Hane, and Hiroshi Sato

    J. Vac. Sci. Technol. B   Vol. 28   page: C1D5   2010

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  31. Atomic structure of a Ni diffused Si (001) surface layer: Precursor to formation of NiSi2 at low temperature Reviewed

    J. Appl. Phys   Vol. 107   page: 033505   2010

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

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Books 1

  1. Characterization of Defects and Deep Levels for GaN Power Devices Reviewed International journal

    Kachi, T( Role: Contributor ,  Chapter 4 Structural Defects in Mg-Doped GaN: TEM Analysis)

    AIP Publishing  ( ISBN:978-0-7354-2270-4

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    Total pages:224   Language:English Book type:Scholarly book

    DOI: 10.1063/9780735422698_004

Presentations 2

  1. 高温アニールMgイオン注入GaN結晶の欠陥解析 International coauthorship

    中島 拓也 櫻井 秀樹 荒井重 岩田 研治 成田 哲 片岡 恵太 Bockowski M 長尾 全寛 須田 淳 加地 徹 五十嵐 信行

    第76学術講演会  2020.5.25  顕微鏡学会

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    Event date: 2020.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:online   Country:Japan  

    高温アニールMgイオン注入GaN結晶の欠陥解

  2. Mgイオン注入GaN結晶の高温・超高圧アニールにより形成される結晶欠陥の透過型電子顕微鏡観察 International coauthorship

    中島 拓也 櫻井 秀樹 荒井重 岩田 研治 成田 哲 片岡 恵太 Bockowski M 長尾 全寛 須田 淳 加地 徹 五十嵐 信行

    学術講演会  2020.3.12  応用物理学会

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:online   Country:Japan  

    Mgイオン注入GaN結晶の高温・超高圧アニールにより形成される結晶欠陥の透過型電子顕微鏡観察

Research Project for Joint Research, Competitive Funding, etc. 1

  1. 省エネルギー社会の実現に資する次世代半導体 International coauthorship

    2016.4 - 2020.3

    受託研究  受託研究

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    Authorship:Coinvestigator(s)  Grant type:Competitive

    Grant amount:\7800000 ( Direct Cost: \7500000 、 Indirect Cost:\300000 )

KAKENHI (Grants-in-Aid for Scientific Research) 2

  1. Output power improvement of microchip deep-ultraviolet laser diodes for innovative manufacturing systems

    Grant number:21H04560  2021.4 - 2026.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

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    Authorship:Coinvestigator(s) 

  2. ワイドギャップ半導体MOS界面欠陥の正体の横断的解明

    Grant number:20H00340  2020.4 - 2025.3

    科学研究費助成事業  基盤研究(A)

    梅田享英, 牧野 俊晴, 原田 信介, 五十嵐 信行, 磯谷 順一, 染谷 満, 松下 雄一郎

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    Authorship:Coinvestigator(s) 

    Grant amount:\900000 ( Direct Cost: \900000 、 Indirect Cost:\90000 )

    次世代パワーエレクトロニクスのキーデバイスとなるワイドギャップ半導体MOS(金属-酸化膜-半導体)型電界効果トランジスタ(MOSFET)について、その核心部となるMOS界面の界面欠陥の正体を解明する。ターゲットは炭化ケイ素4H-SiC、窒化ガリウムGaN、ダイヤモンドの代表的な3種類のMOS界面とし、正体を解明する手段として電流検出型電子スピン共鳴(EDMR)分光+第一原理計算を用いる。本研究により、長い間、正体不明のままだったワイドギャップ半導体MOS界面欠陥の横断的解明が期待できる。これは日本が強みをもつ半導体パワーエレクトロニクス分野をさらに強化し発展させることにつながる。

 

Teaching Experience (On-campus) 4

  1. 真空電子工学

    2020

  2. 電磁気学I

    2015

  3. 粒子線工学特論

    2015

  4. 真空電子工学

    2015

 

Academic Activities 1

  1. International Conference on Materials and Systems for Sustainability 2021 International contribution

    Role(s):Planning, management, etc., Panel moderator, session chair, etc.

    ichiro naruse  2021.11

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    Type:Competition, symposium, etc.