Updated on 2022/03/30

写真a

 
DEKI Manato
 
Organization
Graduate School of Engineering Graduate School of Engineering Associate professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering
Title
Associate professor
Contact information
メールアドレス
External link

Degree 3

  1. Ph.D. ( 2014.3   The University of Tokushima ) 

  2. 修士 ( 2011.3   徳島大学 ) 

  3. 学士 ( 2009.3   高知工業高等専門学校 ) 

Research Interests 5

  1. Gallium Nitride

  2. Power device

  3. MOS devices

  4. Ion Implantation

  5. Silicon Carbide

Research Areas 2

  1. Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  2. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

Current Research Project and SDGs 1

  1. ワイドギャップ材料を用いた低消費電力デバイスの実現

Research History 1

  1. Nagoya University   Graduate School of Engineering Graduate School of Engineering   Associate professor

    2020.5

Professional Memberships 3

  1. 応用物理学会 先進パワー半導体分科会

    2014.10

  2. 応用物理学会 結晶工学分科会

    2014.6

  3. 応用物理学会

    2008.1

Awards 1

  1. 研究奨励賞

    2018.10   日本結晶成長学会  

 

Papers 59

  1. Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN Reviewed

    Itoh Yuta, Watanabe Hirotaka, Ando Yuto, Kano Emi, Deki Manato, Nitta Shugo, Honda Yoshio, Tanaka Atsushi, Ikarashi Nobuyuki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 2 )   2022.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/ac481b

    Web of Science

  2. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg Reviewed

    Lu Shun, Deki Manato, Wang Jia, Ohnishi Kazuki, Ando Yuto, Kumabe Takeru, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 119 ( 24 )   2021.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0076764

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  3. Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions Reviewed

    Jadhav Aakash, Ozawa Takashi, Baratov Ali, Asubar Joel T., Kuzuhara Masaaki, Wakejima Akio, Yamashita Shunpei, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Roy Sourajeet, Sarkar Biplab

      Vol. 68 ( 12 ) page: 6059 - 6064   2021.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TED.2021.3119528

    Web of Science

  4. Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility Reviewed

    Ando Yuto, Deki Manato, Watanabe Hirotaka, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Yamada Hisashi, Shimizu Mitsuaki, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

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    DOI: 10.35848/1882-0786/ac0ffa

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  5. Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs Reviewed

    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 9   page: 570 - 581   2021.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/JEDS.2021.3081463

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  6. Experimental demonstration of GaN IMPATT diode at X-band Reviewed

    Kawasaki Seiya, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Arai Manabu, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 4 )   2021.4

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    DOI: 10.35848/1882-0786/abe3dc

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  7. Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers Reviewed

    Matsukura Yusuke, Inazu Tetsuhiko, Pernot Cyril, Shibata Naoki, Kushimoto Maki, Deki Manato, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

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    DOI: 10.35848/1882-0786/ac154c

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  8. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching Reviewed

    Kumabe Takeru, Ando Yuto, Watanabe Hirotaka, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

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    DOI: 10.35848/1347-4065/abd538

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  9. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching Reviewed

    Yamada Takehiro, Ando Yuto, Watanabe Hirotaka, Furusawa Yuta, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Suda Jun, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 3 )   2021.3

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    DOI: 10.35848/1882-0786/abe657

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  10. Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)

    Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

    OPTICAL MATERIALS EXPRESS   Vol. 11 ( 2 ) page: 524 - 524   2021.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/OME.420328

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  11. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 24 )   2020.12

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0028516

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  12. Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    PHOTONICS RESEARCH   Vol. 8 ( 11 ) page: 1786 - 1791   2020.11

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/PRJ.401785

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  13. Optical properties of neodymium ions in nanoscale regions of gallium nitride

    Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

    OPTICAL MATERIALS EXPRESS   Vol. 10 ( 10 ) page: 2614 - 2623   2020.10

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    Language:Japanese  

    DOI: 10.1364/OME.401765

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  14. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

    Sato Shin-ichiro, Deki Manato, Nishimura Tomoaki, Okada Hiroshi, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Ohshima Takeshi

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Vol. 479   page: 7 - 12   2020.9

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.nimb.2020.06.007

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  15. Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 10 )   2020.9

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0010774

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  16. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 7 ) page: .   2020.7

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  17. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

    Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 217 ( 14 )   2020.7

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201900955

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  18. Impact of high-temperature implantation of Mg ions into GaN

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 5 ) page: .   2020.5

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  19. Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201900554

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  20. Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

    Abhinay S., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 1 )   2020.1

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab65cd

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  21. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    GALLIUM NITRIDE MATERIALS AND DEVICES XV   Vol. 11280   2020

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    DOI: 10.1117/12.2544704

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  22. Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy alpha-particle detection

    Sandupatia A., Arulkurnaran S., Ranjan K., Ng G. I, Murumu P. P., Kennedy J., Deki M., Nitta S., Honda Y., Amano H.

    2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020)     2020

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  23. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

    Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page: 349 - 352   2020

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  24. Low Voltage High-Energy alpha-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ranjan Kumud, Ng Geok Ing, Murmu Peter P., Kennedy John, Nitta Shugo, Honda Yoshio, Deki Manato, Amano Hiroshi

    SENSORS   Vol. 19 ( 23 )   2019.12

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    DOI: 10.3390/s19235107

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  25. Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    MICROELECTRONICS RELIABILITY   Vol. 100   2019.9

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    DOI: 10.1016/j.microrel.2019.113418

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  26. V-shaped dislocations in a GaN epitaxial layer on GaN substrate

    Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

    AIP ADVANCES   Vol. 9 ( 9 )   2019.9

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5114866

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  27. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

    Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 516   page: 63 - 66   2019.6

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    DOI: 10.1016/j.jcrysgro.2019.03.025

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  28. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current

    Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 114 ( 23 )   2019.6

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5097767

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  29. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates

    Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab1250

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  30. Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors

    Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab06b9

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  31. Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab106c

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  32. Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 514   page: 13 - 13   2019.5

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    DOI: 10.1016/j.jcrysgro.2019.02.058

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  33. Photoluminescence properties of praseodymium ions implanted into submicron regions in gallium nitride

    Sato Shin-ichiro, Deki Manato, Nakamura Tohru, Nishimura Tomoaki, Stavrevski Daniel, Greentree Andrew D., Gibson Brant C., Ohshima Takeshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 5 )   2019.5

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    DOI: 10.7567/1347-4065/ab142b

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  34. GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

    Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    AIP ADVANCES   Vol. 9 ( 4 )   2019.4

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    DOI: 10.1063/1.5087491

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  35. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

    Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 509   page: 50-53   2019.3

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    DOI: 10.1016/j.jcrysgro.2018.12.007

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  36. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

    Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

    MATERIALS   Vol. 12 ( 5 )   2019.3

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    DOI: 10.3390/ma12050689

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  37. Morphological study of InGaN on GaN substrate by supersaturation

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 508   page: 58-65   2019.2

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    DOI: 10.1016/j.jcrysgro.2018.12.028

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  38. Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

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    DOI: 10.7567/1882-0786/aafdb9

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  39. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

    Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 10 )   2018.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.105501

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  40. Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering

    Ueoka Yoshihiro, Deki Meneto, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 7 )   2018.7

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    DOI: 10.7567/JJAP.57.070302

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  41. m-Plane GaN Schottky Barrier Diodes Fabricated with MOVPE Layer on Several Off-Angle m-Plane GaN Substrates Reviewed

    Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi A   Vol. 215 ( 9 ) page: 1700645   2018.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201700645

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  42. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Sugawara Yoshihiro, Yao Yong-Zhao, Ishikawa Yukari

    APPLIED PHYSICS LETTERS   Vol. 112 ( 18 )   2018.4

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    DOI: 10.1063/1.5024704

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  43. Femtosecond-Laser-Induced Defects on Silicon Carbide Probed by Electrical Conductivity Reviewed

    Takuro Tomita, Manato Deki, Eizo Yanagita, Yota Bando, Yoshiki Naoi, Takahiro Makino and Takeshi Ohshima

    Journal of Laser Micro/Nanoengineering   Vol. 12 ( 2 ) page: 72 - 75   2017.9

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    DOI: 10.2961/jlmn.2017.02.0004

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  44. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

    Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201600837

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  45. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

    Tanaka Atsushi, Barry Ousmane, Nagamatsu Kentaro, Matsushita Junya, Deki Manato, Ando Yuto, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201600829

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  46. Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10(1)over-bar0) GaN homoepitaxial layers

    Barry Ousmane I., Tanaka Atsushi, Nagamatsu Kentaro, Bae Si-Young, Lekhal Kaddour, Matsushita Junya, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 552-556   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.012

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  47. Development of Sustainable Smart Society based on Transformative Electronics

    Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     page: .   2017

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  48. Effect of V/III ratio on the surface morphology and electrical properties of m-plane(10-10) GaN homoepitaxial layers Reviewed

    Ousmane I Barry, Atsushi Tanaka, Kentaro Nagamatsu, Si-Young Bae, Kaddour Lekhal, Junya Matsushita, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano

    Journal of Crystal Growth     page: 10.1016   2016.12

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  49. Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum Reviewed

    Byung Oh Jung, Kaddour Lekhal, Dong-Seon Lee, Manto Deki, Yoshio Honda, and Hiroshi Amano

    Japanese Journal of Applied Physics     page: 05FG03   2016.4

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  50. Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition Reviewed

    Byung Oh Jung, Kaddour Lekhal, Sang-Yun Kim, Jung-Yong Lee, Dong-Seon Lee, Manto Deki, Yoshio Honda, and Hiroshi Amano

    CrystEngComm   ( 18 ) page: 1505   2016.1

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  51. Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors Reviewed

    Deki Manato, Makino Takahiro, Iwamoto Naoya, Onoda Shinobu, Kojima Kazutoshi, Tomita Takuro, Ohshima Takeshi

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Vol. 319   page: 75-78   2014.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.nimb.2013.09.014

    Web of Science

  52. Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses Reviewed

    Deki Manato, Makino T., Kojima K., Tomita T., Ohshima T.

    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2   Vol. 778-780   page: 440-443   2014

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.4028/www.scientific.net/MSF.778-780.440

    Web of Science

  53. Ternperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide Reviewed

    Deki Manato, Oka Tomoki, Takayoshi Shodai, Naoi Yoshiki, Makino Takahiro, Ohshima Takeshi, Tomita Takuro

    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2   Vol. 778-780   page: 661-664   2014

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.4028/www.scientific.net/MSF.778-780.661

    Web of Science

  54. Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes Reviewed

    Makino Takahiro, Deki Manato, Iwamoto Naoya, Onoda Shinobu, Hoshino Norihiro, Tsuchida Hidekazu, Hirao Toshio, Ohshima Takeshi

    IEEE TRANSACTIONS ON NUCLEAR SCIENCE   Vol. 60 ( 4 ) page: 2647-2650   2013.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TNS.2013.2243469

    Web of Science

  55. Electrical Conduction Properties of SiC Modified by Femtosecond Laser Reviewed

    Ito Takuto, Deki Manato, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi

    JOURNAL OF LASER MICRO NANOENGINEERING   Vol. 7 ( 1 ) page: 16-20   2012.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.2961/jlmn.2012.01.0003

    Web of Science

  56. Enhancement of local electrical conductivities in SiC by femtosecond laser modification Reviewed

    Deki Manato, Ito Takuto, Yamamoto Minoru, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi

    APPLIED PHYSICS LETTERS   Vol. 98 ( 13 )   2011.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3573786

    Web of Science

  57. Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC Reviewed

    Deki Manato, Yamamoto Minoru, Ito Takuto, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi

    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS   Vol. 1399   2011

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3666285

    Web of Science

  58. Single-shot picosecond interferometry with one-nanometer resolution for dynamical surface morphology using a soft X-ray laser Reviewed

    Suemoto Tohru, Terakawa Kota, Ochi Yoshihiro, Tomita Takuro, Yamamoto Minoru, Hasegawa Noboru, Deki Manato, Minami Yasuo, Kawachi Tetsuya

    OPTICS EXPRESS   Vol. 18 ( 13 ) page: 14114-14122   2010.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/OE.18.014114

    Web of Science

  59. Raman Spectroscopic Stress Evaluation of Femtosecond-Laser-Modified Region Inside 4H-SiC Reviewed

    Yamamoto Minoru, Deki Manato, Takahashi Tomonori, Tomita Takuro, Okada Tatsuya, Matsuo Shigeki, Hashimoto Shuichi, Yamaguchi Makoto, Nakagawa Kei, Uehara Nobutomo, Kamano Masaru

    Applied physics express   Vol. 3 ( 1 ) page: 16603-016603-3   2010.1

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    A femtosecond (fs)-laser-modified region inside single-crystal silicon carbide was studied by micro-Raman spectroscopy. Higher and lower peak energy shifts of the transverse optical (TO) phonon mode, which correspond to compressive and tensile stresses, were observed. Mappings of peak energies and spectral widths of the TO phonon mode showed a clear correspondence with the distributions of strained layers observed by transmission electron microscopy. The maximum compressive and tensile stresses were estimated to be 1.4 and 0.4 GPa, respectively. This result indicates that the periodic strained layers contain many nano-voids which are formed by nano-explosions induced by fs laser irradiation.

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Books 1

  1. GaN基板上GaNデバイスの現状と課題

    本田善央、出来真斗( Role: Joint author)

    KEC関西電子工業振興センター  2021.10 

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    Total pages:56   Responsible for pages:7   Language:Japanese Book type:Report

Presentations 30

  1. 多光子励起を用いた光化学エッチングによるGaN3次元加工の検討

    丹羽 ののか,川崎 晟也, 隈部 岳瑠, 田中 敦之, 出来 真斗, 新田 州吾, 本田善央, 天野 浩

    第69回応用物理学会春季学術講演会  2022.3.23 

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    Event date: 2022.3

    Presentation type:Oral presentation (general)  

  2. III族窒化物半導体検出器の⾼温耐性評価

    林 幸佑, 中川 央也, 川崎 晟也, 出来 真⽃, 本⽥ 善央, 天野 浩, 井上 翼, ⻘⽊ 徹, 中野 貴之

    第69回応用物理学会春季学術講演会  2022.3.23 

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    Event date: 2022.3

    Presentation type:Oral presentation (general)  

  3. 縦型p-n接合ダイオードにおける貫通転位による耐圧近傍での微小電流増加

    權 熊, 川崎 晟也, 渡邉 浩崇, 田中 敦之, 出来 真斗, 新田 州吾, 本田 善央, 池田 宏隆, 磯 憲司, 天野 浩

    第69回応用物理学会春季学術講演会  2022.3.23 

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    Event date: 2022.3

    Presentation type:Oral presentation (general)  

  4. 空孔誘導Mg熱拡散法を用いたGaNのMg濃度制御

    伊藤佑太, 島村健矢, 渡邉浩崇, 出来真斗, 新田州吾, 本田善央, 田中敦之, 天野浩

    第69回応用物理学会春季学術講演会  2022.3.23 

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    Event date: 2022.3

    Presentation type:Oral presentation (general)  

  5. Mg熱拡散を用いたGaNのp型化プロセス

    伊藤佑太, 陸順, 渡邉浩崇, 出来真斗, 新田州吾, 田中敦之, 本田善央, 天野浩

    第69回応用物理学会春季学術講演会  2022.3.23 

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    Event date: 2022.3

    Presentation type:Oral presentation (general)  

  6. 多光子励起OBICを用いたGaN縦型p-nダイオード駆動中におけるキャリア濃度分布測定手法の提案

    八木誠,川崎晟也,隈部岳瑠,安藤悠人,田中敦之,出来真斗,久志本真希,新田州吾,本田善央,天野浩

    第69回応用物理学会春季学術講演会  2022.3.23 

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    Event date: 2022.3

    Presentation type:Oral presentation (general)  

  7. 超⾼圧アニールによるMg拡散を⽤いたp型ゲートAlGaN/GaNHEMTの閾値電圧制御

    ⼭下 隼平, 渡邉 浩崇, 安藤 悠⼈, ⽥中 敦之, 出来 真⽃, 新⽥ 州吾, 本⽥ 善央, Michal Bockowski, 加地徹, 天野 浩

    第69回応用物理学会春季学術講演会  2022.3.23 

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    Event date: 2022.3

    Presentation type:Oral presentation (general)  

  8. アニールしたMg層による低濃度p型GaNへの接触抵抗低減

    陸 順, 出来 真斗, 王 嘉, 大西 一生, 安藤 悠人, 渡邉 浩崇, 隈部 岳瑠, 新田 州吾, 本田 善央, 天野 浩

    第69回応用物理学会春季学術講演会  2022.3.23 

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    Event date: 2022.3

    Presentation type:Oral presentation (general)  

  9. GaN IMPATTダイオードにおける発振特性の接合直径依存性

    川崎晟也, 隈部岳瑠, 安藤悠人, 出来真斗, 渡邉 浩崇, 田中敦之, 新田州吾, 本田善央, 新井学, 天野浩

    第69回応用物理学会春季学術講演会  2022.3.23 

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    Event date: 2022.3

    Presentation type:Oral presentation (general)  

  10. Reduction of Specific Contact Resistance on p-type GaN by Thermal Annealed Mg Layer International conference

    Shun Lu, Manato Deki, Jia Wang, Kazuki Ohnishi, Yuto Ando, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda and Hiroshi Amano

    ICMaSS2021  2021.11.5 

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    Event date: 2021.11

    Presentation type:Oral presentation (general)  

  11. GaNへのMgイオン高温注入時におけるビーム電流量が欠陥導入に与える影響

    伊藤佑太, 渡邉浩崇, 安藤悠人, 出来真斗, 狩野絵美, 新田州吾, 本田 善央, 五十嵐信行, 田中敦之, 天野浩

    第82回応用物理学会秋季学術講演会  2021.9.12 

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    Event date: 2021.9

    Presentation type:Oral presentation (general)  

  12. 窒化ガリウム中プラセオジムの発光を利⽤したナノスケール領域温度計測

    佐藤 真⼀郎, 出来 真⽃, ⻄村 智朗, 渡邉 浩崇, 新⽥ 州吾, 本⽥ 善央, 天野 浩, Greentree Andrew, Gibson Brant, ⼤島 武

    第82回応用物理学会秋季学術講演会  2021.9.10 

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    Event date: 2021.9

    Presentation type:Oral presentation (general)  

  13. “Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration International conference

    Takeru Kumabe, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano

    SSDM2021  2021.9.7 

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    Event date: 2021.9

    Presentation type:Oral presentation (general)  

  14. Influence of Annealing on Sputtered Boron Nitride Film

    H. S. Wang, T. Sakai, X. Yang, M. Deki, M. Kushimoto, A. Tanaka, S. Nitta, Y. Honda, and H. Amano

    ISPlasma2019  2019.3.18 

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    Event date: 2019.3

  15. Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD International coauthorship International conference

    S. Abhinay, S. Arulkumaran, G.I. Ng, K. Ranjan, M. Deki, S. Nitta, Y. Honda and H. Amano

    EDTM 2019  2019.3.14 

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    Event date: 2019.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Bayfront Ave   Country:Singapore  

  16. Screw dislocations and nanopipe generation in a MOVPE-grown homoepitaxial layer on freestanding GaN substrates and the electrical influence on vertical p−n diodes International conference

    Shigeyoshi Usami, Atsushi Tanaka, Hayata Fukushima, Yuto Ando, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Aman

    International Workshop on Nitride Semiconductors 2018  2018.11.15 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ishikawa   Country:Japan  

  17. Vertical GaN pn diode with Avalanche capability structure International conference

    Hayata Fukushima, Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    International Workshop on Nitride Semiconductors 2018  2018.11.12 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ishikawa   Country:Japan  

  18. Effect of the misorientation angle of GaN substrate on high-indium-content InGaN grown by metalorganic vapor phase epitaxy International conference

    Zhibin Liu, Shugo Nitta, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Pristovsek, and Hiroshi Amano

    International Workshop on Nitride Semiconductors 2018, Ishikawa, Japan 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ishikawa   Country:Japan  

  19. O2プラズマ処理およびO3酸化処理を行ったAl2O3/GaN構造の界面準位密度評価

    曾根 和詩、 松下 淳矢、 安藤 悠人、 永松 謙太郎、 田中 敦之、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  20. Morphology control of InGaN layer on GaN substrate by metalorganic vapor phase epitaxy

    Zhibin Liu, Ryosuke Miyagoshi, Shugo Nitta, Yoshio Honda, Hiroshi Amano

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    Event date: 2017.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  21. Si基板上半極性(1101)GaNストライプレーザー端面への反射膜作製

    鈴木 崇文、 伊藤 大貴、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  22. 2次元正孔ガスを用いたコレクタトップ縦型 GaNHBT の作製

    安藤 悠人、 小倉 昌也、 松下 淳矢、 宇佐美 茂佳、 田中 敦之、 永松 謙太郎、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  23. 絶対吸収率と光電流測定とを組み合わせた発光ダイオードの光励起キャリア濃度定量

    宇佐美 茂佳、 小島 一信、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 秩父 重英、 天野 浩

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  24. m面GaN SBDの漏れ電流のファセット依存性

    バリー 1オースマネー、田中 敦之、永松 謙太郎、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  25. GaN自立基板上PNダイオードの逆方向リークと転位の関係

    宇佐美 茂佳、 安藤 悠人、 田中 敦之、 永松 謙太郎、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

    第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  26. 窒化ホウ素を用いたGaN-MISキャパシタの作製と電気特性評価

    松下 淳矢、永松 謙太郎、Xu Yang、田中 敦之、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

    先進パワー半導体分科会第3回講演会 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  27. 自立基板上のn--GaN へのMg イオン注入によるp 型層の形成

    HE Shang、曾根和詩、田中敦之、宇佐美茂佳、永松謙太郎、宮本直樹、永山勉、出来真斗、本田善央、天野浩

    先進パワー半導体分科会第3回講演会 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  28. 2次元正孔ガスを用いたコレクタトップ縦型GaN-HBTの作製

    安藤 悠人、小倉 昌也、松下 淳矢、宇佐美 茂佳、田中 敦之、永松 謙太郎、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

    先進パワー半導体分科会第三回講演会 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  29. Facet distribution of leakage current and carrier concentration in m-plane

    Atsushi Tanaka, Ousmane 1 Barry, Kentaro Nagamatsu, Junya Matsushita, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    IWN2016 

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    Event date: 2016.10

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  30. Effect of dislocation on the growth of p-type GaN and device characteristics

    Shigeyoshi Usami, Ryosuke Miyagoshi, Kentaro Nagamatsu, Atsushi Tanaka, Shugo Nitta, Manato Deki, Yoshio Honda, Hiroshi Amano

    IWN2016 

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    Event date: 2016.10

    Language:English   Presentation type:Poster presentation  

    Country:United States  

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Research Project for Joint Research, Competitive Funding, etc. 4

  1. 高効率ユニバーサルパワーコンディショナーを用いた直流グリッドシステムの開発・検証

    2020.4 - 2024.3

    革新的な省CO2実現のための部材や素材の社会実装・普及展開加速化事業 

    上村俊也

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  2. 高効率かつ高出力電動推進システム

    2019.4 - 2022.3

    航空機用先進システム実用化プロジェクト 

    岩熊 成卓

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  3. 優れた空間遮断力とウイルス不活化機能をもつ卓上型エアカーテンの生成装置の開発

    2021.4 - 2022.3

    A-step 

    内山知実

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  4. GaN基板上GaN系パワーデバイス開発

    2014.11 - 2016.3

    JSTスーパークラスタープログラム 

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    Authorship:Coinvestigator(s) 

KAKENHI (Grants-in-Aid for Scientific Research) 2

  1. Lanthanoid doped GaN quantum sensors electrically operated at room temperature

    Grant number:18H01483  2018.4 - 2022.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

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    Authorship:Coinvestigator(s) 

    Grant amount:\17030000 ( Direct Cost: \13100000 、 Indirect Cost:\3930000 )

  2. Investigation of Deep Levels in III-V Semiconductors Crystal using Photo Capacitance Method

    Grant number:16K18077  2016.4 - 2019.3

    Deki Manato

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    Authorship:Principal investigator 

    Grant amount:\4290000 ( Direct Cost: \3300000 、 Indirect Cost:\990000 )

    We investigated deep levels in nitride semiconductors crystal using DLTS and photo capacitance methods. We prepared n-type schottky barrier diodes and MOS capacitors with Al2O3 gate insulators. DLTS and Photo capacitance measurement systems were fabricated, and deep levels which more than 1.5eV were detected by photo capacitance method. In addition, we measured interface state density in Al2O3/GaN interface. Hysteresis of CV curve and VFB were decreased by O3/UV exposure process for 1min. From the XPS measurements, Ga2Ox can improve interface property by this process. Finally, channel mobility of DMOSFET increased with O3/UV exposure process.

Industrial property rights 3

  1. 温度センサ、温度検出装置、温度検出方法、温度検出プログラム、および 温度センサの製造方法

    佐藤 真一郎、出来 真斗、西村 智朗

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    Application no:特願2021-032895  

    Date announced:2021.3

  2. 窒化物半導体装置および窒化物半導体装置の製造方法

    出来 真斗、陸順、天野浩、本田善央

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    Application no:特願2021-121826 

    Date announced:2021.9

  3. 温度検出装置、温度センサ、温度検出方法、および温度検出プログラム

    佐藤 真一郎、出来 真斗、西村 智朗

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    Application no:特願2021-032894 

    Date announced:2021.3

 

Teaching Experience (On-campus) 22

  1. Focus on Venture Business I

    2021

  2. Advanced Experiments for Frontier Technologies and Sciences

    2021

  3. Advanced Lectures on Frontier Technologies and Sciences

    2021

  4. Focus on Venture Business II

    2021

  5. Seminar on Nano Information Device 1A

    2021

  6. Seminar on Nano Information Device 2E

    2021

  7. Seminar on Nano Information Device 2C

    2021

  8. Seminar on Nano Information Device 2A

    2021

  9. Seminar on Nano Information Device 1D

    2021

  10. Seminar on Nano Information Device 1B

    2021

  11. Seminar on Nano Information Device 2D

    2021

  12. 電気電子情報工学実験第1

    2017

     詳細を見る

    電気電子情報工学に関する以下のテーマについて実験・レポートの作成を行う

  13. 電気・電子工学実験第2

    2017

     詳細を見る


    •本講座の目的およびねらい
    以下のテーマのうち1つについて、実験の計画案、実行、検討、結果の報告発表を行う。それぞれの自主性・独創性を期待する。

    •バックグラウンドとなる科目
    電気・電子工学実験第1

    •授業内容
    H1 モーションコントロール
    H2 超電導線を用いた電力系統保護システム
    H3 LSI設計演習
    H4 高温超伝導材料の作製
    H5 FETの作製
    H6 超音波センサを用いた移動体コントロール
    H7 音声送受信システム
    H10 ロボットビジョン
    H11 デジタル画像処理による情報再生
    H12 RFプラズマ生成とプラズマ応用
    H13 太陽光発電システム用簡易型MPPTの製作
    H14 Webシステム構築
    H15 エネルギーハーベスティング回路の構築

    •教科書

    •参考書
    電気・電子工学実験指導書

    •評価方法と基準
    プレゼンテーションとレポートの評価により、100点満点で合計点が60点以上を合格とする。

    •履修条件・注意事項

    •質問への対応
    担当者が対応する

  14. 固体電子工学及び演習

    2017

     詳細を見る

    •本講座の目的およびねらい
    電気電子材料の基礎である固体における化学結合、結晶構造、固体中の電子の挙動、ならびに固体の電子物性の理解を目的とする。演習を通じて学んだ事項の定着を図りつつ、電子デバイスの動作原理を説明できる力を培う。

    •バックグラウンドとなる科目
    量子力学及び演習

    •授業内容
    1.概要 
    2.原子軌道と分子軌道 
    3.固体における化学結合 
    4.結晶構造 
    5.結晶構造と対称性 
    6.逆格子と回析 
    7.自由電子モデル 
    8.格子振動 
    9.固体中の電子 
    10.半導体 
    11.電子の運動と輸送現象 
    12.pn接合 
    13.磁場の中の電子 

    •教科書
    [1]チャールズ キッテル著 「キッテル 固体物理学入門 第8版〈上〉」丸善 ISBN 978-4-621-07653-8
    [2]講義録 http://www.nuee.nagoya-u.ac.jp/labs/nakazatolab/nakazato/Lssee.htm

    •参考書
    [1]若原 昭浩編著 新インターユニバーシティ「固体電子物性」オーム社 ISBN978-4-274-20781-5 [2]溝口 正著「物質化学の基礎 物性物理学」裳華房、ISBN4-7853-2034-6 [3]Neil W. Ashcroft, N.David Mermin, Solid State Physics, Thomson Learning (1976), ISBN-10:0030839939, ISBN-13:978-0030839931 (邦訳) アシュクロフト, マーミン 著, 松原 武生, 町田 一成 訳「固体物理の基礎 上・1 固体電子論概論、上・2 固体のバンド理論、下・1 固体フォノンの諸問題、下・2 固体の物性各論」 (物理学叢書) 吉岡書店、ISBN-10:4842701986, ISBN-13:978-4842701981; ISBN-10:4842701994, ISBN-13:978-4842701998; ISBN-10:4842702028, ISBN-13:978-4842702025; ISBN-10:4842703474, ISBN-13:978-4842703473

    •評価方法と基準
    レポート、期末試験により目標達成度を評価する。総合的に100点満点で60点以上を合格とし、100~90点:S,89~80点:A,79~70点:B,69~60点:C,59点以下:Fとする。演習(50%)、期末試験(50%)

    •履修条件・注意事項

    •質問への対応
    講義終了時に対応する

  15. 卒業研究A

    2017

     詳細を見る

    •本講座の目的およびねらい
    研究室において与えられた課題に関する研究を行うことにより、研究の進め方やデータの整理方法、発表方法を学ぶ。

    •バックグラウンドとなる科目

    •授業内容

    •教科書

    •参考書

    •評価方法と基準

    •履修条件・注意事項

    •質問への対応

  16. 卒業研究A

    2016

     詳細を見る

    •本講座の目的およびねらい
    研究室において与えられた課題に関する研究を行うことにより、研究の進め方やデータの整理方法、発表方法を学ぶ。

    •バックグラウンドとなる科目

    •授業内容

    •教科書

    •参考書

    •評価方法と基準

    •履修条件・注意事項

    •質問への対応

  17. 電気電子情報工学実験第1

    2016

     詳細を見る

    電気電子情報工学に関する以下のテーマについて実験・レポートの作成を行う

  18. 電気・電子工学実験第2

    2016

     詳細を見る


    •本講座の目的およびねらい
    以下のテーマのうち1つについて、実験の計画案、実行、検討、結果の報告発表を行う。それぞれの自主性・独創性を期待する。

    •バックグラウンドとなる科目
    電気・電子工学実験第1

    •授業内容
    H1 モーションコントロール
    H2 超電導線を用いた電力系統保護システム
    H3 LSI設計演習
    H4 高温超伝導材料の作製
    H5 FETの作製
    H6 超音波センサを用いた移動体コントロール
    H7 音声送受信システム
    H10 ロボットビジョン
    H11 デジタル画像処理による情報再生
    H12 RFプラズマ生成とプラズマ応用
    H13 太陽光発電システム用簡易型MPPTの製作
    H14 Webシステム構築
    H15 エネルギーハーベスティング回路の構築

    •教科書

    •参考書
    電気・電子工学実験指導書

    •評価方法と基準
    プレゼンテーションとレポートの評価により、100点満点で合計点が60点以上を合格とする。

    •履修条件・注意事項

    •質問への対応
    担当者が対応する

  19. 固体電子工学及び演習

    2016

     詳細を見る

    •本講座の目的およびねらい
    電気電子材料の基礎である固体における化学結合、結晶構造、固体中の電子の挙動、ならびに固体の電子物性の理解を目的とする。演習を通じて学んだ事項の定着を図りつつ、電子デバイスの動作原理を説明できる力を培う。

    •バックグラウンドとなる科目
    量子力学及び演習

    •授業内容
    1.概要 
    2.原子軌道と分子軌道 
    3.固体における化学結合 
    4.結晶構造 
    5.結晶構造と対称性 
    6.逆格子と回析 
    7.自由電子モデル 
    8.格子振動 
    9.固体中の電子 
    10.半導体 
    11.電子の運動と輸送現象 
    12.pn接合 
    13.磁場の中の電子 

    •教科書
    [1]チャールズ キッテル著 「キッテル 固体物理学入門 第8版〈上〉」丸善 ISBN 978-4-621-07653-8
    [2]講義録 http://www.nuee.nagoya-u.ac.jp/labs/nakazatolab/nakazato/Lssee.htm

    •参考書
    [1]若原 昭浩編著 新インターユニバーシティ「固体電子物性」オーム社 ISBN978-4-274-20781-5 [2]溝口 正著「物質化学の基礎 物性物理学」裳華房、ISBN4-7853-2034-6 [3]Neil W. Ashcroft, N.David Mermin, Solid State Physics, Thomson Learning (1976), ISBN-10:0030839939, ISBN-13:978-0030839931 (邦訳) アシュクロフト, マーミン 著, 松原 武生, 町田 一成 訳「固体物理の基礎 上・1 固体電子論概論、上・2 固体のバンド理論、下・1 固体フォノンの諸問題、下・2 固体の物性各論」 (物理学叢書) 吉岡書店、ISBN-10:4842701986, ISBN-13:978-4842701981; ISBN-10:4842701994, ISBN-13:978-4842701998; ISBN-10:4842702028, ISBN-13:978-4842702025; ISBN-10:4842703474, ISBN-13:978-4842703473

    •評価方法と基準
    レポート、期末試験により目標達成度を評価する。総合的に100点満点で60点以上を合格とし、100~90点:S,89~80点:A,79~70点:B,69~60点:C,59点以下:Fとする。演習(50%)、期末試験(50%)

    •履修条件・注意事項

    •質問への対応
    講義終了時に対応する

  20. 卒業研究A

    2015

     詳細を見る

    •本講座の目的およびねらい
    研究室において与えられた課題に関する研究を行うことにより、研究の進め方やデータの整理方法、発表方法を学ぶ。

    •バックグラウンドとなる科目

    •授業内容

    •教科書

    •参考書

    •評価方法と基準

    •履修条件・注意事項

    •質問への対応

  21. 電気電子情報工学実験第1

    2015

     詳細を見る

    電気電子情報工学に関する以下のテーマについて実験・レポートの作成を行う

  22. 固体電子工学及び演習

    2015

     詳細を見る

    •本講座の目的およびねらい
    電気電子材料の基礎である固体における化学結合、結晶構造、固体中の電子の挙動、ならびに固体の電子物性の理解を目的とする。演習を通じて学んだ事項の定着を図りつつ、電子デバイスの動作原理を説明できる力を培う。

    •バックグラウンドとなる科目
    量子力学及び演習

    •授業内容
    1.概要 
    2.原子軌道と分子軌道 
    3.固体における化学結合 
    4.結晶構造 
    5.結晶構造と対称性 
    6.逆格子と回析 
    7.自由電子モデル 
    8.格子振動 
    9.固体中の電子 
    10.半導体 
    11.電子の運動と輸送現象 
    12.pn接合 
    13.磁場の中の電子 

    •教科書
    [1]チャールズ キッテル著 「キッテル 固体物理学入門 第8版〈上〉」丸善 ISBN 978-4-621-07653-8
    [2]講義録 http://www.nuee.nagoya-u.ac.jp/labs/nakazatolab/nakazato/Lssee.htm

    •参考書
    [1]若原 昭浩編著 新インターユニバーシティ「固体電子物性」オーム社 ISBN978-4-274-20781-5 [2]溝口 正著「物質化学の基礎 物性物理学」裳華房、ISBN4-7853-2034-6 [3]Neil W. Ashcroft, N.David Mermin, Solid State Physics, Thomson Learning (1976), ISBN-10:0030839939, ISBN-13:978-0030839931 (邦訳) アシュクロフト, マーミン 著, 松原 武生, 町田 一成 訳「固体物理の基礎 上・1 固体電子論概論、上・2 固体のバンド理論、下・1 固体フォノンの諸問題、下・2 固体の物性各論」 (物理学叢書) 吉岡書店、ISBN-10:4842701986, ISBN-13:978-4842701981; ISBN-10:4842701994, ISBN-13:978-4842701998; ISBN-10:4842702028, ISBN-13:978-4842702025; ISBN-10:4842703474, ISBN-13:978-4842703473

    •評価方法と基準
    レポート、期末試験により目標達成度を評価する。総合的に100点満点で60点以上を合格とし、100~90点:S,89~80点:A,79~70点:B,69~60点:C,59点以下:Fとする。演習(50%)、期末試験(50%)

    •履修条件・注意事項

    •質問への対応
    講義終了時に対応する

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