Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy Reviewed

Kazuki Ohnishi, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Shun Lu, Manato Deki, Yoshio Honda, and Hiroshi Amano

Journal of Applied Physics   Vol. 132   page： 145703   2022.10

An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs using Rational Functions and Dependent Current Sources Reviewed

Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Biplab Sarkar

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 10   page： 797 - 807   2022.9

Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

Kawasaki, S; Kumabe, T; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H

IEEE ELECTRON DEVICE LETTERS   Vol. 44 ( 8 ) page： 1328 - 1331   2023.8

Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars

Sato, SI; Li, S; Greentree, AD; Deki, M; Nishimura, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Gibson, BC; Ohshima, T

SCIENTIFIC REPORTS   Vol. 12 ( 1 )   2022.12

Substitutional diffusion of Mg into GaN from GaN/Mg mixture

Itoh, Y; Lu, S; Watanabe, H; Deki, M; Nitta, S; Honda, Y; Tanaka, A; Amano, H

APPLIED PHYSICS EXPRESS   Vol. 15 ( 11 )   2022.11

Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy

Ohnishi, K; Fujimoto, N; Nitta, S; Watanabe, H; Lu, S; Deki, M; Honda, Y; Amano, H

JOURNAL OF APPLIED PHYSICS   Vol. 132 ( 14 )   2022.10

Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN Reviewed

Itoh Yuta, Watanabe Hirotaka, Ando Yuto, Kano Emi, Deki Manato, Nitta Shugo, Honda Yoshio, Tanaka Atsushi, Ikarashi Nobuyuki, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 15 ( 2 )   2022.2

An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources

Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 10   page： 797 - 807   2022

Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg Reviewed

Lu Shun, Deki Manato, Wang Jia, Ohnishi Kazuki, Ando Yuto, Kumabe Takeru, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 119 ( 24 )   2021.12

Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions Reviewed

Jadhav Aakash, Ozawa Takashi, Baratov Ali, Asubar Joel T., Kuzuhara Masaaki, Wakejima Akio, Yamashita Shunpei, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Roy Sourajeet, Sarkar Biplab

  Vol. 68 ( 12 ) page： 6059 - 6064   2021.12

Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility Reviewed

Ando Yuto, Deki Manato, Watanabe Hirotaka, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Yamada Hisashi, Shimizu Mitsuaki, Nakamura Tohru, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers Reviewed

Matsukura Yusuke, Inazu Tetsuhiko, Pernot Cyril, Shibata Naoki, Kushimoto Maki, Deki Manato, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching Reviewed

Kumabe Takeru, Ando Yuto, Watanabe Hirotaka, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

Experimental demonstration of GaN IMPATT diode at X-band Reviewed

Kawasaki Seiya, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Arai Manabu, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 14 ( 4 )   2021.4

Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching Reviewed

Yamada Takehiro, Ando Yuto, Watanabe Hirotaka, Furusawa Yuta, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Suda Jun, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 14 ( 3 )   2021.3

Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)

Sato, SI; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Nishimura, T; Gibson, BC; Greentree, AD; Amano, H; Ohshima, T

OPTICAL MATERIALS EXPRESS   Vol. 11 ( 2 ) page： 524 - 524   2021.2

Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs Reviewed

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 9   page： 570 - 581   2021

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al₂O₃/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H

APPLIED PHYSICS LETTERS   Vol. 117 ( 24 )   2020.12

Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation

Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M

PHOTONICS RESEARCH   Vol. 8 ( 11 ) page： 1786 - 1791   2020.11

Optical properties of neodymium ions in nanoscale regions of gallium nitride

Sato, SI; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Nishimura, T; Gibson, BC; Greentree, AD; Amano, H; Ohshima, T

OPTICAL MATERIALS EXPRESS   Vol. 10 ( 10 ) page： 2614 - 2623   2020.10

Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

Sato, S; Deki, M; Nishimura, T; Okada, H; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Ohshima, T

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Vol. 479   page： 7 - 12   2020.9

Low interface state densities at Al₂O₃/GaN interfaces formed on vicinal polar and non-polar surfaces

Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H

APPLIED PHYSICS LETTERS   Vol. 117 ( 10 )   2020.9

Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 13 ( 7 ) page： .   2020.7

Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 217 ( 14 )   2020.7

Impact of high-temperature implantation of Mg ions into GaN

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 5 ) page： .   2020.5

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

Abhinay S., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 1 )   2020.1

Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

GALLIUM NITRIDE MATERIALS AND DEVICES XV   Vol. 11280   2020

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

Liao, YQ; Chen, T; Wang, J; Ando, Y; Yang, X; Watanabe, H; Hirotani, J; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page： 349 - 352   2020

Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy α-particle detection

Sandupatia, A; Arulkurnaran, S; Ranjan, K; Ng, GI; Murumu, PP; Kennedy, J; Deki, M; Nitta, S; Honda, Y; Amano, H

2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020)     2020

Low Voltage High-Energy alpha-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

Sandupatla Abhinay, Arulkumaran Subramaniam, Ranjan Kumud, Ng Geok Ing, Murmu Peter P., Kennedy John, Nitta Shugo, Honda Yoshio, Deki Manato, Amano Hiroshi

SENSORS   Vol. 19 ( 23 )   2019.12

Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

MICROELECTRONICS RELIABILITY   Vol. 100   2019.9

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

AIP ADVANCES   Vol. 9 ( 9 )   2019.9

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 516   page： 63 - 66   2019.6

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current

Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 114 ( 23 )   2019.6

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates

Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors

Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 514   page： 13 - 13   2019.5

Photoluminescence properties of praseodymium ions implanted into submicron regions in gallium nitride

Sato Shin-ichiro, Deki Manato, Nakamura Tohru, Nishimura Tomoaki, Stavrevski Daniel, Greentree Andrew D., Gibson Brant C., Ohshima Takeshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 5 )   2019.5

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

AIP ADVANCES   Vol. 9 ( 4 )   2019.4

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 509   page： 50 - 53   2019.3

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

MATERIALS   Vol. 12 ( 5 )   2019.3

Morphological study of InGaN on GaN substrate by supersaturation

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 508   page： 58 - 65   2019.2

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 10 )   2018.10

Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering

Ueoka Yoshihiro, Deki Meneto, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 7 )   2018.7

m-Plane GaN Schottky Barrier Diodes Fabricated with MOVPE Layer on Several Off-Angle m-Plane GaN Substrates Reviewed

Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

Phys. Status Solidi A   Vol. 215 ( 9 ) page： 1700645   2018.5

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Sugawara Yoshihiro, Yao Yong-Zhao, Ishikawa Yukari

APPLIED PHYSICS LETTERS   Vol. 112 ( 18 )   2018.4

Femtosecond-Laser-Induced Defects on Silicon Carbide Probed by Electrical Conductivity Reviewed

Takuro Tomita, Manato Deki, Eizo Yanagita, Yota Bando, Yoshiki Naoi, Takahiro Makino and Takeshi Ohshima

Journal of Laser Micro/Nanoengineering   Vol. 12 ( 2 ) page： 72 - 75   2017.9

Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Tanaka Atsushi, Barry Ousmane, Nagamatsu Kentaro, Matsushita Junya, Deki Manato, Ando Yuto, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10(1)over-bar0) GaN homoepitaxial layers

Barry Ousmane I., Tanaka Atsushi, Nagamatsu Kentaro, Bae Si-Young, Lekhal Kaddour, Matsushita Junya, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 468   page： 552 - 556   2017.6

Development of Sustainable Smart Society based on Transformative Electronics

Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     page： .   2017

Effect of V/III ratio on the surface morphology and electrical properties of m-plane(10-10) GaN homoepitaxial layers Reviewed

Ousmane I Barry, Atsushi Tanaka, Kentaro Nagamatsu, Si-Young Bae, Kaddour Lekhal, Junya Matsushita, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano

Journal of Crystal Growth     page： 10.1016   2016.12

Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum Reviewed

Byung Oh Jung, Kaddour Lekhal, Dong-Seon Lee, Manto Deki, Yoshio Honda, and Hiroshi Amano

Japanese Journal of Applied Physics     page： 05FG03   2016.4

Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition Reviewed

Byung Oh Jung, Kaddour Lekhal, Sang-Yun Kim, Jung-Yong Lee, Dong-Seon Lee, Manto Deki, Yoshio Honda, and Hiroshi Amano

CrystEngComm   ( 18 ) page： 1505   2016.1

Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors Reviewed

Deki Manato, Makino Takahiro, Iwamoto Naoya, Onoda Shinobu, Kojima Kazutoshi, Tomita Takuro, Ohshima Takeshi

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Vol. 319   page： 75-78   2014.1

Ternperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide Reviewed

Deki Manato, Oka Tomoki, Takayoshi Shodai, Naoi Yoshiki, Makino Takahiro, Ohshima Takeshi, Tomita Takuro

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2   Vol. 778-780   page： 661-664   2014

Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses Reviewed

Deki Manato, Makino T., Kojima K., Tomita T., Ohshima T.

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2   Vol. 778-780   page： 440-443   2014

Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes Reviewed

Makino Takahiro, Deki Manato, Iwamoto Naoya, Onoda Shinobu, Hoshino Norihiro, Tsuchida Hidekazu, Hirao Toshio, Ohshima Takeshi

IEEE TRANSACTIONS ON NUCLEAR SCIENCE   Vol. 60 ( 4 ) page： 2647-2650   2013.8

Electrical Conduction Properties of SiC Modified by Femtosecond Laser Reviewed

Ito Takuto, Deki Manato, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi

JOURNAL OF LASER MICRO NANOENGINEERING   Vol. 7 ( 1 ) page： 16-20   2012.2

Enhancement of local electrical conductivities in SiC by femtosecond laser modification Reviewed

Deki Manato, Ito Takuto, Yamamoto Minoru, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi

APPLIED PHYSICS LETTERS   Vol. 98 ( 13 )   2011.3

Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC Reviewed

Deki Manato, Yamamoto Minoru, Ito Takuto, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS   Vol. 1399   2011

Single-shot picosecond interferometry with one-nanometer resolution for dynamical surface morphology using a soft X-ray laser Reviewed

Suemoto Tohru, Terakawa Kota, Ochi Yoshihiro, Tomita Takuro, Yamamoto Minoru, Hasegawa Noboru, Deki Manato, Minami Yasuo, Kawachi Tetsuya

OPTICS EXPRESS   Vol. 18 ( 13 ) page： 14114-14122   2010.6

Raman Spectroscopic Stress Evaluation of Femtosecond-Laser-Modified Region Inside 4H-SiC Reviewed

Yamamoto Minoru, Deki Manato, Takahashi Tomonori, Tomita Takuro, Okada Tatsuya, Matsuo Shigeki, Hashimoto Shuichi, Yamaguchi Makoto, Nakagawa Kei, Uehara Nobutomo, Kamano Masaru

Applied physics express   Vol. 3 ( 1 ) page： 16603-016603-3   2010.1

フリーホイールダイオードを内蔵したソース接続分極超接合トランジスタの飽和電流増加構造の検討

小久保 瑛斗, 渡邉 浩崇, 出来 真斗, 田中 敦之, 新田 州吾, 本田 善央, 天野 浩

第71回応用物理学会春季学術講演会  2024.3.24 

Fabrication of GaN Polarization Super Junction (PSJ) FET with built-in freewheeling diode International conference

Eito Kokubo, Hirotaka Watanabe, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Hiroshi Amano

International Conference on Materials and Systems for Sustainability（ICMaSS 2023）  2023.12.2 

"Nanoscale Temperature Sensing Using Praseodymium Ions Implanted in Gallium Nitride Semiconductors" International conference

Shin-ichiro Sato, Manato Deki, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

International Conference on Materials and Systems for Sustainability（ICMaSS 2023）  2023.12.2 

Electrical characteristics of Al2O3/LT-AlN/GaN MIS capacitors fabricated by in situ growth International conference

Ren Obata, Takeru Kumabe, Hirotaka Watanabe, Manato Deki, Yoshio Honda and Hiroshi Amano

International Conference on Materials and Systems for Sustainability（ICMaSS 2023）  2023.12.2 

Mgの熱拡散によるp型GaNの実現とデバイス応用への課題

伊藤 佑太, 渡邉 浩崇, 出来 真斗, 新田 州吾, 田中 敦之, 本田 善夫, 天野　浩

"電子情報通信学会 レーザ・量子エレクトロニクス研究会(LQE) / 電子デバイス研究会(ED) / 電子部品・材料研究会(CPM) "  2023.11.30 

Lateral p-type GaN Schottky barrier diode using annealed Mg ohmic contact layer on low-Mg-concentration p-GaN International conference

Shun Lu, Manato Deki, Takeru Kumabe, Jia Wang, Kazuki Ohnishi, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.13 

15 GHz GaN Hi-Lo IMPATT diodes with pulsed peak power of 25.5 W International conference

Seiya Kawasaki, Takeru Kumabe, Manato Deki, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Manabu Arai and Hiroshi Amano

14th International Conference on Nitride Semiconductors 2023 (ICNS-14)  2023.11.16 

HVPE 法及びMOVPE法により成長させた低Mg濃度p型GaNの準位

大原 悠樹, 出来 真斗, 陸 順, 大西 一生, 渡邉 浩崇, 本田 善央, 天野 浩

第10回 応用物理学会 名古屋大学スチューデントチャプター 東海地区学術講演会  2023.11.3 

Highly effective activation of Mg-diffused p-type GaN using Mg/GaN mixed crystal

Yuta Itoh, Masaya Takeda, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Yoshio Honda, Atsushi Tanaka, and Hiroshi Amano

2023.10.13 

Analysis of single ion induced signals in gallium nitrides toward deterministic single-ion implantation International conference

T. Fujita, S.-I. Sato, M. Deki, H. Watanabe, S. Nitta, Y. Honda, H. Amano, and H. Tsuchida

26th International Conference on Ion Beam Analysis, 18th International Conference on Particle Induced X-ray Emission (IBA-PIXE2023)  2023.10.13 

フリーホイールダイオードを内蔵したソース接続PSJトランジスタのシミュレーション及び作製

小久保 瑛斗, 渡邉 浩崇, 田中 敦之, 出来 真斗, 新田 州吾, 本田 善央, 天野 浩

第84回応用物理学会秋季学術講演会  2023.9.23 

マイクロ波帯Hi-Lo型GaN IMPATTダイオードにおけるLo層ドナー濃度が入出力特性に与える影響

川崎 晟也, 隈部 岳瑠, 出来 真斗, 渡邉 浩崇, 田中 敦之, 本田 善央, 新井 学, 天野 浩

第84回応用物理学会秋季学術講演会  2023.9.21 

Optical Activation of Praseodymium Ions Implanted in GaN after Ultra-High Pressure Annealing International conference

Shin Ito, Shinichiro Sato, Michal Boćkowski, Manato Deki, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Kenichi Yoshida, Hideki Minagawa, Naoto Hagura

21st International Conference on Radiation Effects in Insulators (REI-21)  2023.9.7 

GaNの表面保護プロセスがGaN/絶縁膜界面特性に与える影響

小幡 蓮, 隈部 岳瑠, 渡邉 浩崇, 出来 真斗, 本田 善央, 天野 浩

第15回ナノ構造エピタキシャル成長講演会  2023.6.15 

Recess-etching-free GaN p-MOSFET achieved by p-type contact to GaN/AlGaN heterojunction with Mg-annealing process International conference

Shun Lu, Manato Deki, Jia Wang, Hirotaka Watanabe, Eito Kokubo, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

GaN Marathon 2024  2023.6.11 

Fabrication of GaN Hi-Lo IMPATT diode International conference

Seiya Kawasaki, Takeru Kumabe, Manato Deki, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Manabu Arai and Hiroshi Amano

WOCSDICE-EXMATEC 2023  2023.5.25 

窒化ガリウム半導体における単一イオンヒット検出条件の検討

藤田 泰樹, 佐藤 真一郎, 出来 真斗, 渡邊 浩崇, 新田 州吾, 本田 善央, 天野 浩, 土田 秀次

第70回　応用物理学会　春季学術講演会  2023.3.17 

希土類イオン注入したGaNの超高圧熱処理による発光特性および結晶構造の変化

伊藤 慎, 佐藤 真一郎, Michal Bockowski, 出来 真斗, 渡邊 浩崇, 新田 州吾, 本田 善央, 天野 浩, 吉田 謙一, 南川 英輝, 羽倉 尚人

第70回　応用物理学会　春季学術講演会  2023.3.17 

GaN/AlN共鳴トンネルダイオードの動作電圧低減・高電流密度化

岩田大暉，隈部岳瑠，渡邉浩崇，出来真斗，本田善央，天野浩

第70回　応用物理学会　春季学術講演会  2023.3.18 

マイクロ波帯Hi Lo型GaN IMPATTダイオードの設計および作製

川崎晟也, 隈部岳瑠, 出来真斗, 渡邉浩崇, 田中敦之, 本田善央, 新井学, 天野 浩

第70回　応用物理学会　春季学術講演会  2023.3.18 

K-Ka帯GaN IMPATTダイオードの作製

川崎 晟也, 隈部 岳瑠, 出来 真斗, 渡邉 浩崇, 田中 敦之, 本田 善央, 新井 学, 天野 浩

2024 年 電子情報通信学会 総合大会  2023.3.6 

GaN縦型pnダイオード駆動中の多光子励起OBICを用いたキャリア密度分布測定手法の模索

八木誠，川崎晟也，隈部岳瑠，安藤悠人，田中敦之，出来真斗，久志本真希，新田州吾，本田善央，天野浩

第9回 応用物理学会 名古屋大学SC東海地区学術講演会  2022.12.10 

MOVPE法を用いたGaN/AlN共鳴トンネルダイオードの作製

岩田大暉, 隈部岳瑠, 渡邉浩崇, 出来真斗, 久志本真希, 新田州吾, 田中敦之, 本田善央, 天野浩

第9回 応用物理学会 名古屋大学SC東海地区学術講演会  2022.12.10 

Highly effective activation of Mg-diffused p-type GaN using MgGaN International conference

IWN2022  2022.10.12 

Fabrication of GaN/AlN Resonant tunneling diodes by MOVPE International conference

IWN2022  2022.10.12 

GaN IMPATT diode with pulsed watt-class microwave oscillation International conference

IWN2022  2022.10.13 

コロナCV法を用いたAl2O3/AlGaN/GaN構造の非接触電気特性評価

竹村亮太, 渡邉浩崇, 出来真斗, 本田善央, 天野浩

第14回ナノ構造エピタキシャル成長講演会  2022.9.24 

Mg熱拡散法を用いた縦型GaNp-n接合ダイオードの作製

伊藤佑太, 川崎 晟也, 権熊, 島村 健矢, 成田 周平, 渡邉浩崇, 出来真斗, 新田州吾, 本田善央, 田中敦之, 天野浩

第83回　応用物理学会　秋季学術講演会  2022.9.22 

p型分極ドープAlGaN層中のShockley-Read-Hall寿命

隈部岳瑠, 川崎晟也, 渡邉浩崇, 出来真斗, 本田善央, 天野浩

第83回　応用物理学会　秋季学術講演会  2022.9.22 

異なるキャリア濃度を有するn型GaNに対する多光子励起 PECエッチングの調査

丹羽 ののか，川崎 晟也, 隈部 岳瑠, 渡邉 浩崇, 古澤 優太, 田中 敦之, 出来 真斗, 久志本 真希, 新田 州吾, 本田 善央, 天野 浩

第83回　応用物理学会　秋季学術講演会  2022.9.23 

熱拡散法を用いて形成されたp-GaN中のMgの拡散

島村健矢, 伊藤佑太, 隈部岳瑠, 川崎晟也, 渡邉浩崇, 出来真斗, 新田州吾, 田中敦之, 本田善央, 天野浩

第83回　応用物理学会　秋季学術講演会  2022.9.22 

For 3D Processing of GaN by Photo Enhanced Chemical Etching Method Utilizing Multi-photon Excitation International conference

LEDIA2022  2022.4.21 

多光子励起を用いた光化学エッチングによるGaN3次元加工の検討

丹羽 ののか，川崎 晟也, 隈部 岳瑠, 田中 敦之, 出来 真斗, 新田 州吾, 本田善央, 天野 浩

第69回応用物理学会春季学術講演会  2022.3.23 

III族窒化物半導体検出器の⾼温耐性評価

林 幸佑, 中川 央也, 川崎 晟也, 出来 真⽃, 本⽥ 善央, 天野 浩, 井上 翼, ⻘⽊ 徹, 中野 貴之

第69回応用物理学会春季学術講演会  2022.3.23 

縦型p-n接合ダイオードにおける貫通転位による耐圧近傍での微小電流増加

權 熊, 川崎 晟也, 渡邉 浩崇, 田中 敦之, 出来 真斗, 新田 州吾, 本田 善央, 池田 宏隆, 磯 憲司, 天野 浩

第69回応用物理学会春季学術講演会  2022.3.23 

空孔誘導Mg熱拡散法を用いたGaNのMg濃度制御

伊藤佑太, 島村健矢, 渡邉浩崇, 出来真斗, 新田州吾, 本田善央, 田中敦之, 天野浩

第69回応用物理学会春季学術講演会  2022.3.23 

Mg熱拡散を用いたGaNのp型化プロセス

伊藤佑太, 陸順, 渡邉浩崇, 出来真斗, 新田州吾, 田中敦之, 本田善央, 天野浩

第69回応用物理学会春季学術講演会  2022.3.23 

多光子励起OBICを用いたGaN縦型p-nダイオード駆動中におけるキャリア濃度分布測定手法の提案

八木誠，川崎晟也，隈部岳瑠，安藤悠人，田中敦之，出来真斗，久志本真希，新田州吾，本田善央，天野浩

第69回応用物理学会春季学術講演会  2022.3.23 

超⾼圧アニールによるMg拡散を⽤いたp型ゲートAlGaN/GaNHEMTの閾値電圧制御

⼭下 隼平, 渡邉 浩崇, 安藤 悠⼈, ⽥中 敦之, 出来 真⽃, 新⽥ 州吾, 本⽥ 善央, Michal Bockowski, 加地徹, 天野 浩

第69回応用物理学会春季学術講演会  2022.3.23 

アニールしたMg層による低濃度p型GaNへの接触抵抗低減

陸 順, 出来 真斗, 王 嘉, 大西 一生, 安藤 悠人, 渡邉 浩崇, 隈部 岳瑠, 新田 州吾, 本田 善央, 天野 浩

第69回応用物理学会春季学術講演会  2022.3.23 

GaN IMPATTダイオードにおける発振特性の接合直径依存性

川崎晟也, 隈部岳瑠, 安藤悠人, 出来真斗, 渡邉 浩崇, 田中敦之, 新田州吾, 本田善央, 新井学, 天野浩

第69回応用物理学会春季学術講演会  2022.3.23 

Reduction of Specific Contact Resistance on p-type GaN by Thermal Annealed Mg Layer International conference

Shun Lu, Manato Deki, Jia Wang, Kazuki Ohnishi, Yuto Ando, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda and Hiroshi Amano

ICMaSS2021  2021.11.5 

GaNへのMgイオン高温注入時におけるビーム電流量が欠陥導入に与える影響

伊藤佑太, 渡邉浩崇, 安藤悠人, 出来真斗, 狩野絵美, 新田州吾, 本田 善央, 五十嵐信行, 田中敦之, 天野浩

第82回応用物理学会秋季学術講演会  2021.9.12 

窒化ガリウム中プラセオジムの発光を利⽤したナノスケール領域温度計測

佐藤 真⼀郎, 出来 真⽃, ⻄村 智朗, 渡邉 浩崇, 新⽥ 州吾, 本⽥ 善央, 天野 浩, Greentree Andrew, Gibson Brant, ⼤島 武

第82回応用物理学会秋季学術講演会  2021.9.10 

“Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration International conference

Takeru Kumabe, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano

SSDM2021  2021.9.7 

Influence of Annealing on Sputtered Boron Nitride Film

H. S. Wang, T. Sakai, X. Yang, M. Deki, M. Kushimoto, A. Tanaka, S. Nitta, Y. Honda, and H. Amano

ISPlasma2019  2019.3.18 

Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD International coauthorship International conference

S. Abhinay, S. Arulkumaran, G.I. Ng, K. Ranjan, M. Deki, S. Nitta, Y. Honda and H. Amano

EDTM 2019  2019.3.14 

Screw dislocations and nanopipe generation in a MOVPE-grown homoepitaxial layer on freestanding GaN substrates and the electrical influence on vertical p−n diodes International conference

Shigeyoshi Usami, Atsushi Tanaka, Hayata Fukushima, Yuto Ando, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Aman

International Workshop on Nitride Semiconductors 2018  2018.11.15 

Vertical GaN pn diode with Avalanche capability structure International conference

Hayata Fukushima, Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

International Workshop on Nitride Semiconductors 2018  2018.11.12 

Effect of the misorientation angle of GaN substrate on high-indium-content InGaN grown by metalorganic vapor phase epitaxy International conference

Zhibin Liu, Shugo Nitta, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Pristovsek, and Hiroshi Amano

International Workshop on Nitride Semiconductors 2018, Ishikawa, Japan 

O2プラズマ処理およびO3酸化処理を行ったAl2O3/GaN構造の界面準位密度評価

曾根 和詩、 松下 淳矢、 安藤 悠人、 永松 謙太郎、 田中 敦之、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

第64回応用物理学会春季学術講演会 

2次元正孔ガスを用いたコレクタトップ縦型 GaNHBT の作製

安藤 悠人、 小倉 昌也、 松下 淳矢、 宇佐美 茂佳、 田中 敦之、 永松 謙太郎、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

第64回応用物理学会春季学術講演会 

Si基板上半極性(1101)GaNストライプレーザー端面への反射膜作製

鈴木 崇文、 伊藤 大貴、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

第64回応用物理学会春季学術講演会 

m面GaN SBDの漏れ電流のファセット依存性

バリー １オースマネー、田中 敦之、永松 謙太郎、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

第64回応用物理学会春季学術講演会 

GaN自立基板上PNダイオードの逆方向リークと転位の関係

宇佐美 茂佳、 安藤 悠人、 田中 敦之、 永松 謙太郎、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

第64回応用物理学会春季学術講演会 

絶対吸収率と光電流測定とを組み合わせた発光ダイオードの光励起キャリア濃度定量

宇佐美 茂佳、 小島 一信、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 秩父 重英、 天野 浩

第64回応用物理学会春季学術講演会 

Morphology control of InGaN layer on GaN substrate by metalorganic vapor phase epitaxy

Zhibin Liu, Ryosuke Miyagoshi, Shugo Nitta, Yoshio Honda, Hiroshi Amano

窒化ホウ素を用いたGaN-MISキャパシタの作製と電気特性評価

松下　淳矢、永松　謙太郎、Xu　Yang、田中 敦之、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

先進パワー半導体分科会第3回講演会 

自立基板上のn--GaN へのMg イオン注入によるp 型層の形成

HE Shang、曾根和詩、田中敦之、宇佐美茂佳、永松謙太郎、宮本直樹、永山勉、出来真斗、本田善央、天野浩

先進パワー半導体分科会第3回講演会 

2次元正孔ガスを用いたコレクタトップ縦型GaN-HBTの作製

安藤 悠人、小倉 昌也、松下 淳矢、宇佐美 茂佳、田中 敦之、永松 謙太郎、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

先進パワー半導体分科会第三回講演会 

Facet distribution of leakage current and carrier concentration in m-plane

Atsushi Tanaka, Ousmane 1 Barry, Kentaro Nagamatsu, Junya Matsushita, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

IWN2016 

Effect of dislocation on the growth of p-type GaN and device characteristics

Shigeyoshi Usami, Ryosuke Miyagoshi, Kentaro Nagamatsu, Atsushi Tanaka, Shugo Nitta, Manato Deki, Yoshio Honda, Hiroshi Amano

IWN2016 

Seminar on Nano Information Device 1A

2021

Focus on Venture Business I

2021

Advanced Experiments for Frontier Technologies and Sciences

2021

Advanced Lectures on Frontier Technologies and Sciences

2021

Focus on Venture Business II

2021

Seminar on Nano Information Device 1D

2021

Seminar on Nano Information Device 1B

2021

Seminar on Nano Information Device 2D

2021

電気電子情報工学実験第１

2017

電気・電子工学実験第２

2017

固体電子工学及び演習

2017

卒業研究A

2017

電気電子情報工学実験第１

2016

電気・電子工学実験第２

2016

固体電子工学及び演習

2016

卒業研究A

2016

卒業研究A

2015

電気電子情報工学実験第１

2015

固体電子工学及び演習

2015