Updated on 2021/04/04

写真a

 
DEKI Manato
 
Organization
Graduate School of Engineering Graduate School of Engineering Associate professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering
Title
Associate professor
External link

Degree 1

  1. Ph.D. ( 2014.3   The University of Tokushima ) 

Research Interests 5

  1. Gallium Nitride

  2. Power device

  3. MOS devices

  4. Ion Implantation

  5. Silicon Carbide

Research Areas 2

  1. Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  2. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

Current Research Project and SDGs 1

  1. ワイドギャップ材料を用いた低消費電力デバイスの実現

Professional Memberships 3

  1. 応用物理学会 先進パワー半導体分科会

    2014.10

  2. 応用物理学会 結晶工学分科会

    2014.6

  3. 応用物理学会

    2008.1

Awards 1

  1. 研究奨励賞

    2018.10   日本結晶成長学会  

 

Papers 52

  1. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

    Kumabe Takeru, Ando Yuto, Watanabe Hirotaka, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abd538

    Web of Science

  2. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

    Yamada Takehiro, Ando Yuto, Watanabe Hirotaka, Furusawa Yuta, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Suda Jun, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 3 )   2021.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/abe657

    Web of Science

  3. Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)

    Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

    OPTICAL MATERIALS EXPRESS   Vol. 11 ( 2 ) page: 524 - 524   2021.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/OME.420328

    Web of Science

  4. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 24 )   2020.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0028516

    Web of Science

  5. Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    PHOTONICS RESEARCH   Vol. 8 ( 11 ) page: 1786 - 1791   2020.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/PRJ.401785

    Web of Science

  6. Optical properties of neodymium ions in nanoscale regions of gallium nitride

    Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

    OPTICAL MATERIALS EXPRESS   Vol. 10 ( 10 ) page: 2614 - 2623   2020.10

  7. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

    Sato Shin-ichiro, Deki Manato, Nishimura Tomoaki, Okada Hiroshi, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Ohshima Takeshi

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Vol. 479   page: 7 - 12   2020.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.nimb.2020.06.007

    Web of Science

  8. Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 10 )   2020.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0010774

    Web of Science

  9. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 7 ) page: .   2020.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  10. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

    Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 217 ( 14 )   2020.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201900955

    Web of Science

  11. Impact of high-temperature implantation of Mg ions into GaN

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 5 ) page: .   2020.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  12. Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201900554

    Web of Science

  13. Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

    Abhinay S., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 1 )   2020.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab65cd

    Web of Science

  14. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    GALLIUM NITRIDE MATERIALS AND DEVICES XV   Vol. 11280   2020

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1117/12.2544704

    Web of Science

  15. Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy alpha-particle detection

    Sandupatia A., Arulkurnaran S., Ranjan K., Ng G. I, Murumu P. P., Kennedy J., Deki M., Nitta S., Honda Y., Amano H.

    2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020)     2020

     More details

  16. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

    Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page: 349 - 352   2020

     More details

  17. Low Voltage High-Energy alpha-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ranjan Kumud, Ng Geok Ing, Murmu Peter P., Kennedy John, Nitta Shugo, Honda Yoshio, Deki Manato, Amano Hiroshi

    SENSORS   Vol. 19 ( 23 )   2019.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/s19235107

    Web of Science

  18. Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    MICROELECTRONICS RELIABILITY   Vol. 100   2019.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.microrel.2019.113418

    Web of Science

  19. V-shaped dislocations in a GaN epitaxial layer on GaN substrate

    Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

    AIP ADVANCES   Vol. 9 ( 9 )   2019.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5114866

    Web of Science

  20. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

    Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 516   page: 63 - 66   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.03.025

    Web of Science

  21. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current

    Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 114 ( 23 )   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5097767

    Web of Science

  22. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates

    Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab1250

    Web of Science

  23. Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors

    Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab06b9

    Web of Science

  24. Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab106c

    Web of Science

  25. Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 514   page: 13 - 13   2019.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.02.058

    Web of Science

  26. Photoluminescence properties of praseodymium ions implanted into submicron regions in gallium nitride

    Sato Shin-ichiro, Deki Manato, Nakamura Tohru, Nishimura Tomoaki, Stavrevski Daniel, Greentree Andrew D., Gibson Brant C., Ohshima Takeshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 5 )   2019.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab142b

    Web of Science

  27. GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

    Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    AIP ADVANCES   Vol. 9 ( 4 )   2019.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5087491

    Web of Science

  28. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

    Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 509   page: 50-53   2019.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.12.007

    Web of Science

  29. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

    Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

    MATERIALS   Vol. 12 ( 5 )   2019.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/ma12050689

    Web of Science

  30. Morphological study of InGaN on GaN substrate by supersaturation

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 508   page: 58-65   2019.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.12.028

    Web of Science

  31. Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/aafdb9

    Web of Science

  32. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

    Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 10 )   2018.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.105501

    Web of Science

  33. Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering

    Ueoka Yoshihiro, Deki Meneto, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 7 )   2018.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.070302

    Web of Science

  34. m-Plane GaN Schottky Barrier Diodes Fabricated with MOVPE Layer on Several Off-Angle m-Plane GaN Substrates Reviewed

    Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi A   Vol. 215 ( 9 ) page: 1700645   2018.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201700645

    Web of Science

  35. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Sugawara Yoshihiro, Yao Yong-Zhao, Ishikawa Yukari

    APPLIED PHYSICS LETTERS   Vol. 112 ( 18 )   2018.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5024704

    Web of Science

  36. Femtosecond-Laser-Induced Defects on Silicon Carbide Probed by Electrical Conductivity Reviewed

    Takuro Tomita, Manato Deki, Eizo Yanagita, Yota Bando, Yoshiki Naoi, Takahiro Makino and Takeshi Ohshima

    Journal of Laser Micro/Nanoengineering   Vol. 12 ( 2 ) page: 72 - 75   2017.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.2961/jlmn.2017.02.0004

    Web of Science

  37. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

    Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201600837

    Web of Science

  38. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

    Tanaka Atsushi, Barry Ousmane, Nagamatsu Kentaro, Matsushita Junya, Deki Manato, Ando Yuto, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201600829

    Web of Science

  39. Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10(1)over-bar0) GaN homoepitaxial layers

    Barry Ousmane I., Tanaka Atsushi, Nagamatsu Kentaro, Bae Si-Young, Lekhal Kaddour, Matsushita Junya, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 552-556   2017.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2016.12.012

    Web of Science

  40. Development of Sustainable Smart Society based on Transformative Electronics

    Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     page: .   2017

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  41. Effect of V/III ratio on the surface morphology and electrical properties of m-plane(10-10) GaN homoepitaxial layers Reviewed

    Ousmane I Barry, Atsushi Tanaka, Kentaro Nagamatsu, Si-Young Bae, Kaddour Lekhal, Junya Matsushita, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano

    Journal of Crystal Growth     page: 10.1016   2016.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  42. Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum Reviewed

    Byung Oh Jung, Kaddour Lekhal, Dong-Seon Lee, Manto Deki, Yoshio Honda, and Hiroshi Amano

    Japanese Journal of Applied Physics     page: 05FG03   2016.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  43. Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition Reviewed

    Byung Oh Jung, Kaddour Lekhal, Sang-Yun Kim, Jung-Yong Lee, Dong-Seon Lee, Manto Deki, Yoshio Honda, and Hiroshi Amano

    CrystEngComm   ( 18 ) page: 1505   2016.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  44. Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors Reviewed

    Deki Manato, Makino Takahiro, Iwamoto Naoya, Onoda Shinobu, Kojima Kazutoshi, Tomita Takuro, Ohshima Takeshi

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Vol. 319   page: 75-78   2014.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.nimb.2013.09.014

    Web of Science

  45. Ternperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide Reviewed

    Deki Manato, Oka Tomoki, Takayoshi Shodai, Naoi Yoshiki, Makino Takahiro, Ohshima Takeshi, Tomita Takuro

    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2   Vol. 778-780   page: 661-664   2014

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.4028/www.scientific.net/MSF.778-780.661

    Web of Science

  46. Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses Reviewed

    Deki Manato, Makino T., Kojima K., Tomita T., Ohshima T.

    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2   Vol. 778-780   page: 440-443   2014

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.4028/www.scientific.net/MSF.778-780.440

    Web of Science

  47. Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes Reviewed

    Makino Takahiro, Deki Manato, Iwamoto Naoya, Onoda Shinobu, Hoshino Norihiro, Tsuchida Hidekazu, Hirao Toshio, Ohshima Takeshi

    IEEE TRANSACTIONS ON NUCLEAR SCIENCE   Vol. 60 ( 4 ) page: 2647-2650   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TNS.2013.2243469

    Web of Science

  48. Electrical Conduction Properties of SiC Modified by Femtosecond Laser Reviewed

    Ito Takuto, Deki Manato, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi

    JOURNAL OF LASER MICRO NANOENGINEERING   Vol. 7 ( 1 ) page: 16-20   2012.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.2961/jlmn.2012.01.0003

    Web of Science

  49. Enhancement of local electrical conductivities in SiC by femtosecond laser modification Reviewed

    Deki Manato, Ito Takuto, Yamamoto Minoru, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi

    APPLIED PHYSICS LETTERS   Vol. 98 ( 13 )   2011.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3573786

    Web of Science

  50. Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC Reviewed

    Deki Manato, Yamamoto Minoru, Ito Takuto, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi

    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS   Vol. 1399   2011

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3666285

    Web of Science

  51. Single-shot picosecond interferometry with one-nanometer resolution for dynamical surface morphology using a soft X-ray laser Reviewed

    Suemoto Tohru, Terakawa Kota, Ochi Yoshihiro, Tomita Takuro, Yamamoto Minoru, Hasegawa Noboru, Deki Manato, Minami Yasuo, Kawachi Tetsuya

    OPTICS EXPRESS   Vol. 18 ( 13 ) page: 14114-14122   2010.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/OE.18.014114

    Web of Science

  52. Raman Spectroscopic Stress Evaluation of Femtosecond-Laser-Modified Region Inside 4H-SiC Reviewed

    Yamamoto Minoru, Deki Manato, Takahashi Tomonori, Tomita Takuro, Okada Tatsuya, Matsuo Shigeki, Hashimoto Shuichi, Yamaguchi Makoto, Nakagawa Kei, Uehara Nobutomo, Kamano Masaru

    Applied physics express   Vol. 3 ( 1 ) page: 16603-016603-3   2010.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    A femtosecond (fs)-laser-modified region inside single-crystal silicon carbide was studied by micro-Raman spectroscopy. Higher and lower peak energy shifts of the transverse optical (TO) phonon mode, which correspond to compressive and tensile stresses, were observed. Mappings of peak energies and spectral widths of the TO phonon mode showed a clear correspondence with the distributions of strained layers observed by transmission electron microscopy. The maximum compressive and tensile stresses were estimated to be 1.4 and 0.4 GPa, respectively. This result indicates that the periodic strained layers contain many nano-voids which are formed by nano-explosions induced by fs laser irradiation.

    CiNii Article

▼display all

Presentations 17

  1. Influence of Annealing on Sputtered Boron Nitride Film

    H. S. Wang, T. Sakai, X. Yang, M. Deki, M. Kushimoto, A. Tanaka, S. Nitta, Y. Honda, and H. Amano

    ISPlasma2019  2019.3.18 

     More details

    Event date: 2019.3

  2. Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD International coauthorship International conference

    S. Abhinay, S. Arulkumaran, G.I. Ng, K. Ranjan, M. Deki, S. Nitta, Y. Honda and H. Amano

    EDTM 2019  2019.3.14 

     More details

    Event date: 2019.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Bayfront Ave   Country:Singapore  

  3. Screw dislocations and nanopipe generation in a MOVPE-grown homoepitaxial layer on freestanding GaN substrates and the electrical influence on vertical p−n diodes International conference

    Shigeyoshi Usami, Atsushi Tanaka, Hayata Fukushima, Yuto Ando, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Aman

    International Workshop on Nitride Semiconductors 2018  2018.11.15 

     More details

    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ishikawa   Country:Japan  

  4. Vertical GaN pn diode with Avalanche capability structure International conference

    Hayata Fukushima, Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    International Workshop on Nitride Semiconductors 2018  2018.11.12 

     More details

    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ishikawa   Country:Japan  

  5. Effect of the misorientation angle of GaN substrate on high-indium-content InGaN grown by metalorganic vapor phase epitaxy International conference

    Zhibin Liu, Shugo Nitta, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Pristovsek, and Hiroshi Amano

    International Workshop on Nitride Semiconductors 2018, Ishikawa, Japan 

     More details

    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ishikawa   Country:Japan  

  6. O2プラズマ処理およびO3酸化処理を行ったAl2O3/GaN構造の界面準位密度評価

    曾根 和詩、 松下 淳矢、 安藤 悠人、 永松 謙太郎、 田中 敦之、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

    第64回応用物理学会春季学術講演会 

     More details

    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  7. m面GaN SBDの漏れ電流のファセット依存性

    バリー 1オースマネー、田中 敦之、永松 謙太郎、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

    第64回応用物理学会春季学術講演会 

     More details

    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  8. GaN自立基板上PNダイオードの逆方向リークと転位の関係

    宇佐美 茂佳、 安藤 悠人、 田中 敦之、 永松 謙太郎、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

    第64回応用物理学会春季学術講演会 

     More details

    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  9. 絶対吸収率と光電流測定とを組み合わせた発光ダイオードの光励起キャリア濃度定量

    宇佐美 茂佳、 小島 一信、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 秩父 重英、 天野 浩

    第64回応用物理学会春季学術講演会 

     More details

    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  10. Morphology control of InGaN layer on GaN substrate by metalorganic vapor phase epitaxy

    Zhibin Liu, Ryosuke Miyagoshi, Shugo Nitta, Yoshio Honda, Hiroshi Amano

     More details

    Event date: 2017.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  11. Si基板上半極性(1101)GaNストライプレーザー端面への反射膜作製

    鈴木 崇文、 伊藤 大貴、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

    第64回応用物理学会春季学術講演会 

     More details

    Event date: 2017.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  12. 2次元正孔ガスを用いたコレクタトップ縦型 GaNHBT の作製

    安藤 悠人、 小倉 昌也、 松下 淳矢、 宇佐美 茂佳、 田中 敦之、 永松 謙太郎、 久志本 真希、 出来 真斗、 新田 州吾、 本田 善央、 天野 浩

    第64回応用物理学会春季学術講演会 

     More details

    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  13. 窒化ホウ素を用いたGaN-MISキャパシタの作製と電気特性評価

    松下 淳矢、永松 謙太郎、Xu Yang、田中 敦之、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

    先進パワー半導体分科会第3回講演会 

     More details

    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  14. 自立基板上のn--GaN へのMg イオン注入によるp 型層の形成

    HE Shang、曾根和詩、田中敦之、宇佐美茂佳、永松謙太郎、宮本直樹、永山勉、出来真斗、本田善央、天野浩

    先進パワー半導体分科会第3回講演会 

     More details

    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  15. 2次元正孔ガスを用いたコレクタトップ縦型GaN-HBTの作製

    安藤 悠人、小倉 昌也、松下 淳矢、宇佐美 茂佳、田中 敦之、永松 謙太郎、久志本 真希、出来 真斗、新田 州吾、本田 善央、天野 浩

    先進パワー半導体分科会第三回講演会 

     More details

    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  16. Facet distribution of leakage current and carrier concentration in m-plane

    Atsushi Tanaka, Ousmane 1 Barry, Kentaro Nagamatsu, Junya Matsushita, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    IWN2016 

     More details

    Event date: 2016.10

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  17. Effect of dislocation on the growth of p-type GaN and device characteristics

    Shigeyoshi Usami, Ryosuke Miyagoshi, Kentaro Nagamatsu, Atsushi Tanaka, Shugo Nitta, Manato Deki, Yoshio Honda, Hiroshi Amano

    IWN2016 

     More details

    Event date: 2016.10

    Language:English   Presentation type:Poster presentation  

    Country:United States  

▼display all

Research Project for Joint Research, Competitive Funding, etc. 1

  1. GaN基板上GaN系パワーデバイス開発

    2014.11 - 2016.3

    JSTスーパークラスタープログラム 

      More details

    Authorship:Coinvestigator(s) 

KAKENHI (Grants-in-Aid for Scientific Research) 2

  1. Lanthanoid doped GaN quantum sensors electrically operated at room temperature

    Grant number:18H01483  2018.4 - 2022.3

      More details

    Authorship:Coinvestigator(s) 

  2. Investigation of Deep Levels in III-V Semiconductors Crystal using Photo Capacitance Method

    Grant number:16K18077  2016.4 - 2019.3

    Deki Manato

      More details

    Authorship:Principal investigator 

    Grant amount:\4290000 ( Direct Cost: \3300000 、 Indirect Cost:\990000 )

    We investigated deep levels in nitride semiconductors crystal using DLTS and photo capacitance methods. We prepared n-type schottky barrier diodes and MOS capacitors with Al2O3 gate insulators. DLTS and Photo capacitance measurement systems were fabricated, and deep levels which more than 1.5eV were detected by photo capacitance method. In addition, we measured interface state density in Al2O3/GaN interface. Hysteresis of CV curve and VFB were decreased by O3/UV exposure process for 1min. From the XPS measurements, Ga2Ox can improve interface property by this process. Finally, channel mobility of DMOSFET increased with O3/UV exposure process.

 

Teaching Experience (On-campus) 11

  1. 電気電子情報工学実験第1

    2017

     詳細を見る

    電気電子情報工学に関する以下のテーマについて実験・レポートの作成を行う

  2. 電気・電子工学実験第2

    2017

     詳細を見る


    •本講座の目的およびねらい
    以下のテーマのうち1つについて、実験の計画案、実行、検討、結果の報告発表を行う。それぞれの自主性・独創性を期待する。

    •バックグラウンドとなる科目
    電気・電子工学実験第1

    •授業内容
    H1 モーションコントロール
    H2 超電導線を用いた電力系統保護システム
    H3 LSI設計演習
    H4 高温超伝導材料の作製
    H5 FETの作製
    H6 超音波センサを用いた移動体コントロール
    H7 音声送受信システム
    H10 ロボットビジョン
    H11 デジタル画像処理による情報再生
    H12 RFプラズマ生成とプラズマ応用
    H13 太陽光発電システム用簡易型MPPTの製作
    H14 Webシステム構築
    H15 エネルギーハーベスティング回路の構築

    •教科書

    •参考書
    電気・電子工学実験指導書

    •評価方法と基準
    プレゼンテーションとレポートの評価により、100点満点で合計点が60点以上を合格とする。

    •履修条件・注意事項

    •質問への対応
    担当者が対応する

  3. 固体電子工学及び演習

    2017

     詳細を見る

    •本講座の目的およびねらい
    電気電子材料の基礎である固体における化学結合、結晶構造、固体中の電子の挙動、ならびに固体の電子物性の理解を目的とする。演習を通じて学んだ事項の定着を図りつつ、電子デバイスの動作原理を説明できる力を培う。

    •バックグラウンドとなる科目
    量子力学及び演習

    •授業内容
    1.概要 
    2.原子軌道と分子軌道 
    3.固体における化学結合 
    4.結晶構造 
    5.結晶構造と対称性 
    6.逆格子と回析 
    7.自由電子モデル 
    8.格子振動 
    9.固体中の電子 
    10.半導体 
    11.電子の運動と輸送現象 
    12.pn接合 
    13.磁場の中の電子 

    •教科書
    [1]チャールズ キッテル著 「キッテル 固体物理学入門 第8版〈上〉」丸善 ISBN 978-4-621-07653-8
    [2]講義録 http://www.nuee.nagoya-u.ac.jp/labs/nakazatolab/nakazato/Lssee.htm

    •参考書
    [1]若原 昭浩編著 新インターユニバーシティ「固体電子物性」オーム社 ISBN978-4-274-20781-5 [2]溝口 正著「物質化学の基礎 物性物理学」裳華房、ISBN4-7853-2034-6 [3]Neil W. Ashcroft, N.David Mermin, Solid State Physics, Thomson Learning (1976), ISBN-10:0030839939, ISBN-13:978-0030839931 (邦訳) アシュクロフト, マーミン 著, 松原 武生, 町田 一成 訳「固体物理の基礎 上・1 固体電子論概論、上・2 固体のバンド理論、下・1 固体フォノンの諸問題、下・2 固体の物性各論」 (物理学叢書) 吉岡書店、ISBN-10:4842701986, ISBN-13:978-4842701981; ISBN-10:4842701994, ISBN-13:978-4842701998; ISBN-10:4842702028, ISBN-13:978-4842702025; ISBN-10:4842703474, ISBN-13:978-4842703473

    •評価方法と基準
    レポート、期末試験により目標達成度を評価する。総合的に100点満点で60点以上を合格とし、100~90点:S,89~80点:A,79~70点:B,69~60点:C,59点以下:Fとする。演習(50%)、期末試験(50%)

    •履修条件・注意事項

    •質問への対応
    講義終了時に対応する

  4. 卒業研究A

    2017

     詳細を見る

    •本講座の目的およびねらい
    研究室において与えられた課題に関する研究を行うことにより、研究の進め方やデータの整理方法、発表方法を学ぶ。

    •バックグラウンドとなる科目

    •授業内容

    •教科書

    •参考書

    •評価方法と基準

    •履修条件・注意事項

    •質問への対応

  5. 卒業研究A

    2016

     詳細を見る

    •本講座の目的およびねらい
    研究室において与えられた課題に関する研究を行うことにより、研究の進め方やデータの整理方法、発表方法を学ぶ。

    •バックグラウンドとなる科目

    •授業内容

    •教科書

    •参考書

    •評価方法と基準

    •履修条件・注意事項

    •質問への対応

  6. 電気電子情報工学実験第1

    2016

     詳細を見る

    電気電子情報工学に関する以下のテーマについて実験・レポートの作成を行う

  7. 電気・電子工学実験第2

    2016

     詳細を見る


    •本講座の目的およびねらい
    以下のテーマのうち1つについて、実験の計画案、実行、検討、結果の報告発表を行う。それぞれの自主性・独創性を期待する。

    •バックグラウンドとなる科目
    電気・電子工学実験第1

    •授業内容
    H1 モーションコントロール
    H2 超電導線を用いた電力系統保護システム
    H3 LSI設計演習
    H4 高温超伝導材料の作製
    H5 FETの作製
    H6 超音波センサを用いた移動体コントロール
    H7 音声送受信システム
    H10 ロボットビジョン
    H11 デジタル画像処理による情報再生
    H12 RFプラズマ生成とプラズマ応用
    H13 太陽光発電システム用簡易型MPPTの製作
    H14 Webシステム構築
    H15 エネルギーハーベスティング回路の構築

    •教科書

    •参考書
    電気・電子工学実験指導書

    •評価方法と基準
    プレゼンテーションとレポートの評価により、100点満点で合計点が60点以上を合格とする。

    •履修条件・注意事項

    •質問への対応
    担当者が対応する

  8. 固体電子工学及び演習

    2016

     詳細を見る

    •本講座の目的およびねらい
    電気電子材料の基礎である固体における化学結合、結晶構造、固体中の電子の挙動、ならびに固体の電子物性の理解を目的とする。演習を通じて学んだ事項の定着を図りつつ、電子デバイスの動作原理を説明できる力を培う。

    •バックグラウンドとなる科目
    量子力学及び演習

    •授業内容
    1.概要 
    2.原子軌道と分子軌道 
    3.固体における化学結合 
    4.結晶構造 
    5.結晶構造と対称性 
    6.逆格子と回析 
    7.自由電子モデル 
    8.格子振動 
    9.固体中の電子 
    10.半導体 
    11.電子の運動と輸送現象 
    12.pn接合 
    13.磁場の中の電子 

    •教科書
    [1]チャールズ キッテル著 「キッテル 固体物理学入門 第8版〈上〉」丸善 ISBN 978-4-621-07653-8
    [2]講義録 http://www.nuee.nagoya-u.ac.jp/labs/nakazatolab/nakazato/Lssee.htm

    •参考書
    [1]若原 昭浩編著 新インターユニバーシティ「固体電子物性」オーム社 ISBN978-4-274-20781-5 [2]溝口 正著「物質化学の基礎 物性物理学」裳華房、ISBN4-7853-2034-6 [3]Neil W. Ashcroft, N.David Mermin, Solid State Physics, Thomson Learning (1976), ISBN-10:0030839939, ISBN-13:978-0030839931 (邦訳) アシュクロフト, マーミン 著, 松原 武生, 町田 一成 訳「固体物理の基礎 上・1 固体電子論概論、上・2 固体のバンド理論、下・1 固体フォノンの諸問題、下・2 固体の物性各論」 (物理学叢書) 吉岡書店、ISBN-10:4842701986, ISBN-13:978-4842701981; ISBN-10:4842701994, ISBN-13:978-4842701998; ISBN-10:4842702028, ISBN-13:978-4842702025; ISBN-10:4842703474, ISBN-13:978-4842703473

    •評価方法と基準
    レポート、期末試験により目標達成度を評価する。総合的に100点満点で60点以上を合格とし、100~90点:S,89~80点:A,79~70点:B,69~60点:C,59点以下:Fとする。演習(50%)、期末試験(50%)

    •履修条件・注意事項

    •質問への対応
    講義終了時に対応する

  9. 卒業研究A

    2015

     詳細を見る

    •本講座の目的およびねらい
    研究室において与えられた課題に関する研究を行うことにより、研究の進め方やデータの整理方法、発表方法を学ぶ。

    •バックグラウンドとなる科目

    •授業内容

    •教科書

    •参考書

    •評価方法と基準

    •履修条件・注意事項

    •質問への対応

  10. 電気電子情報工学実験第1

    2015

     詳細を見る

    電気電子情報工学に関する以下のテーマについて実験・レポートの作成を行う

  11. 固体電子工学及び演習

    2015

     詳細を見る

    •本講座の目的およびねらい
    電気電子材料の基礎である固体における化学結合、結晶構造、固体中の電子の挙動、ならびに固体の電子物性の理解を目的とする。演習を通じて学んだ事項の定着を図りつつ、電子デバイスの動作原理を説明できる力を培う。

    •バックグラウンドとなる科目
    量子力学及び演習

    •授業内容
    1.概要 
    2.原子軌道と分子軌道 
    3.固体における化学結合 
    4.結晶構造 
    5.結晶構造と対称性 
    6.逆格子と回析 
    7.自由電子モデル 
    8.格子振動 
    9.固体中の電子 
    10.半導体 
    11.電子の運動と輸送現象 
    12.pn接合 
    13.磁場の中の電子 

    •教科書
    [1]チャールズ キッテル著 「キッテル 固体物理学入門 第8版〈上〉」丸善 ISBN 978-4-621-07653-8
    [2]講義録 http://www.nuee.nagoya-u.ac.jp/labs/nakazatolab/nakazato/Lssee.htm

    •参考書
    [1]若原 昭浩編著 新インターユニバーシティ「固体電子物性」オーム社 ISBN978-4-274-20781-5 [2]溝口 正著「物質化学の基礎 物性物理学」裳華房、ISBN4-7853-2034-6 [3]Neil W. Ashcroft, N.David Mermin, Solid State Physics, Thomson Learning (1976), ISBN-10:0030839939, ISBN-13:978-0030839931 (邦訳) アシュクロフト, マーミン 著, 松原 武生, 町田 一成 訳「固体物理の基礎 上・1 固体電子論概論、上・2 固体のバンド理論、下・1 固体フォノンの諸問題、下・2 固体の物性各論」 (物理学叢書) 吉岡書店、ISBN-10:4842701986, ISBN-13:978-4842701981; ISBN-10:4842701994, ISBN-13:978-4842701998; ISBN-10:4842702028, ISBN-13:978-4842702025; ISBN-10:4842703474, ISBN-13:978-4842703473

    •評価方法と基準
    レポート、期末試験により目標達成度を評価する。総合的に100点満点で60点以上を合格とし、100~90点:S,89~80点:A,79~70点:B,69~60点:C,59点以下:Fとする。演習(50%)、期末試験(50%)

    •履修条件・注意事項

    •質問への対応
    講義終了時に対応する

▼display all