Updated on 2023/09/29

写真a

 
SHIRAISHI Kenji
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Multiphysics Simulation Section Professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering
Title
Professor
Contact information
メールアドレス

Degree 1

  1. Doctor of Science ( 1988.3   The University of Tokyo ) 

Research History 7

  1. 名古屋大学   未来材料・システム研究所    教授

    2015.10

      More details

    Country:Japan

  2. 名古屋大学大学院工学研究科 計算理工学専攻 教授

    2013.5 - 2015.9

      More details

    Country:Japan

  3. 筑波大学 教授 大学院数理物質科学研究科

    2007.10 - 2013.5

      More details

    Country:Japan

  4. 筑波大学 准教授 大学院数理物質科学研究科

    2007.4 - 2007.10

      More details

    Country:Japan

  5. 筑波大学 助教授 大学院数理物質科学研究科

    2004.4 - 2007.3

      More details

    Country:Japan

  6. 筑波大学 助教授 物理学系

    2001.1 - 2004.3

      More details

    Country:Japan

  7. 日本電信電話株式会社

    1988.4 - 2000.12

      More details

    Country:Japan

▼display all

Education 1

  1. The University of Tokyo   Graduate School, Division of Science

    1978.4 - 1988.3

      More details

    Country: Japan

Professional Memberships 6

  1. 日本表面科学会   認証事業委員会委員

    2012.4

  2. 日本物理学会   領域4領域代表

    2011.10

  3. 日本物理学会   領域4領域副代表

    2010.10 - 2011.9

  4. 日本表面科学会   日本表面科学会フェロー会員

    2010.5

  5. 応用物理学会   JJAP編集委員

    2007.4 - 2010.3

  6. 応用物理学会   応用物理編集委員

    2000.4 - 2002.3

▼display all

 

Papers 143

  1. シリコン原子はどこへ行く? まだまだ不思議な熱酸化 Invited

    影島博之, 秋山亨, 白石賢二, 植松真司

    応用物理学会誌   Vol. 91 ( 3 ) page: 155 - 159   2022.3

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.11470/oubutsu.91.3_155

  2. First-principles study on silicon emission from interface into oxide during silicon thermal oxidation

    Kageshima Hiroyuki, Akiyama Toru, Shiraishi Kenji

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 162   2023.8

  3. Elucidation of Spin-Correlations, Fermi Surface and Pseudogap in a Copper Oxide Superconductor

    Kamimura Hiroshi, Araidai Masaaki, Ishida Kunio, Matsuno Shunichi, Sakata Hideaki, Sasaoka Kenji, Shiraishi Kenji, Sugino Osamu, Tsai Jaw-Shen, Yamada Kazuyoshi

    CONDENSED MATTER   Vol. 8 ( 2 )   2023.6

  4. GaN薄膜成長機構解明への量子論計算科学のアプローチ

    押山 淳, 白石 賢二

    日本結晶成長学会誌   Vol. 50 ( 1 )   2023.4

     More details

  5. GaN有機金属気相成長におけるデジタルツイン開発の現状

    草場 彰, 寒川 義裕, 久保山 哲二, 新田 州吾, 白石 賢二, 押山 淳

    日本結晶成長学会誌   Vol. 50 ( 1 )   2023.4

     More details

  6. Comparative study of the gas phase reaction of SiCl4, SiHCl3, SiH2Cl2, and SiH3Cl by thermodynamic analysis

    Nagahashi Tomoya, Karasawa Hajime, Horiike Ryota, Kimura Tomoya, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( 4 )   2023.4

  7. Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators Reviewed

    Yoshiki Ohata, Masaaki Araidai, Takuma Ishiguro, Hiroyuki Mitsuya, Hiroshi Toshiyoshi, Yasushi Shibata, Gen Hashiguchi, Kenji Shiraishi

    Materials Science in Semiconductor Processing   Vol. 157   page: 107306   2023.4

     More details

    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1016/j.mssp.2022.107306

  8. Microscopic physical origin of charge traps in 3D NAND flash memories

    Nanataki Fugo, Iwata Jun-Ichi, Chokawa Kenta, Araidai Masaaki, Oshiyama Atsushi, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SC )   2023.4

  9. Effect of hydrogen atoms on potassium-ion electrets used in vibration-powered generators

    Ohata Yoshiki, Araidai Masaaki, Ishiguro Takuma, Mitsuya Hiroyuki, Toshiyoshi Hiroshi, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 157   2023.4

  10. Insight into the step flow growth of gallium nitride based on density functional theory

    Bui Kieu My, Shiraishi Kenji, Oshiyama Atsushi

    APPLIED SURFACE SCIENCE   Vol. 613   2023.3

  11. Effect of MgO Grain Boundaries on the Interfacial Perpendicular Magnetic Anisotropy in Spin-transfer torque Magnetic Random-Access Memory: A First-Principles Study Reviewed

    K. Morishita, Y. Harashima, M. Araidai, T. Endoh, K. Shiraishi

    IEEE Transactions on Magnetics   Vol. 59 ( 4 )   2023.2

     More details

  12. Atomic and electronic structures of interfaces between amorphous (Al2O3)(1-x)(SiO2)(x) and GaN polar surfaces revealed by first-principles simulated annealing technique

    Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi

    JOURNAL OF APPLIED PHYSICS   Vol. 133 ( 6 )   2023.2

  13. Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process Reviewed

    Yoshiki Ohata, Toru Nakanishi, Kenta Chokawa, Masaaki Araidai, Takuma Ishiguro, Hiroyuki Mitsuya, Hiroshi Toshiyoshi, Yasushi Shibata, Gen Hashiguchi, Kenji Shiraishi

    Applied Physics Letters   Vol. 121 ( 24 ) page: 243903   2022.12

     More details

    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1063/5.0129247

  14. Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process

    Ohata Yoshiki, Nakanishi Toru, Chokawa Kenta, Araidai Masaaki, Ishiguro Takuma, Mitsuya Hiroyuki, Toshiyoshi Hiroshi, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji

    APPLIED PHYSICS LETTERS   Vol. 121 ( 24 )   2022.12

  15. Effect of interfacial nitrogen defects on tunnel magnetoresistance in an Fe/MgO/Fe magnetic tunnel junction

    Ogawa Yutaro, Araidai Masaaki, Endoh Tetsuo, Shiraishi Kenji

    JOURNAL OF APPLIED PHYSICS   Vol. 132 ( 21 )   2022.12

  16. Atomic and electronic structures of nitrogen vacancies in silicon nitride: Emergence of floating gap states

    Nanataki Fugo, Shiraishi Kenji, Iwata Jun-ichi, Matsushita Yu-ichiro, Oshiyama Atsushi

    PHYSICAL REVIEW B   Vol. 106 ( 15 )   2022.10

  17. Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy

    Kusaba A., Nitta S., Shiraishi K., Kuboyama T., Kangawa Y.

    APPLIED PHYSICS LETTERS   Vol. 121 ( 16 )   2022.10

  18. An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth

    Boero Mauro, Bui Kieu My, Shiraishi Kenji, Ishisone Kana, Kangawa Yoshihiro, Oshiyama Atsushi

    APPLIED SURFACE SCIENCE   Vol. 599   2022.10

  19. Reaction of nitrous oxide and ammonia molecules at 4H-SiC/SiO2 interface: An ab initio study

    Akiyama Toru, Shimizu Tsunashi, Ito Tomonori, Kageshima Hiroyuki, Shiraishi Kenji

    SURFACE SCIENCE   Vol. 723   2022.9

  20. Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth

    Kimura Tomoya, Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi

    PHYSICAL REVIEW B   Vol. 106 ( 3 )   2022.7

  21. Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces

    Akiyama Toru, Shimizu Tsunashi, Ito Tomonori, Kageshima Hiroyuki, Chokawa Kenta, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SH )   2022.7

  22. Effect of carbon atoms on the reliability of potassium-ion electrets used in vibration-powered generators

    Ohata Yoshiki, Araidai Masaaki, Shibata Yasushi, Hashiguchi Gen, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SH )   2022.7

  23. Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction Reviewed

    Tsunashi Shimizu, Toru Akiyama, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, and Kenji Shiraishi

    Physical Review Materials   Vol. 5 ( 11 ) page: 114601-1 - 114601-12   2021.11

     More details

    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1103/PhysRevMaterials.5.114601

  24. Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction

    Shimizu Tsunashi, Akiyama Toru, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

    PHYSICAL REVIEW MATERIALS   Vol. 5 ( 11 )   2021.11

     More details

  25. Gallium-gallium weak bond that incorporates nitrogen at atomic steps during GaN epitaxial growth

    Bui Kieu My, Shiraishi Kenji, Oshiyama Atsushi

    APPLIED SURFACE SCIENCE   Vol. 557   2021.8

     More details

  26. First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments

    Chokawa Kenta, Daigo Yoshiaki, Mizushima Ichiro, Yoda Takashi, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 8 )   2021.8

     More details

    Language:Japanese  

    DOI: 10.35848/1347-4065/ac1127

    Web of Science

  27. Investigation of Negative Charge Storage Mechanism in the Potassium Ion Electret by First-Principle Calculations Invited Reviewed

    Nakanishi, Toru ; Miyajima, Takeshi ; Chokawa, Kenta ; Araidai, Masaaki ; Sugiyama, Tatsuhiko ; Hashiguchi, Gen ; Shiraishi, Kenji

    IEEJ Transactions on Sensors and Micromachines   Vol. 141 ( 8 ) page: 292 - 298   2021.8

     More details

    Authorship:Last author  

    DOI: 10.1541/ieejsmas.141.292

  28. Defect-free interface between amorphous (Al2O3)(1-x)(SiO2)(x) and GaN(0001) revealed by first-principles simulated annealing technique

    Chokawa Kenta, Shiraishi Kenji, Oshiyama Atsushi

    APPLIED PHYSICS LETTERS   Vol. 119 ( 1 )   2021.7

     More details

    Language:Japanese  

    DOI: 10.1063/5.0047088

    Web of Science

  29. Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation

    Shimizu Tsunashi, Akiyama Toru, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

     More details

    Language:Japanese  

    DOI: 10.35848/1347-4065/abdcb1

    Web of Science

  30. Theoretical study on the effect of H-2 and NH3 on trimethylgallium decomposition process in GaN MOVPE

    Sakakibara Soma, Chokawa Kenta, Araidai Masaaki, Kusaba Akira, Kangawa Yoshihiro, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 4 )   2021.4

     More details

    Language:Japanese  

    DOI: 10.35848/1347-4065/abf089

    Web of Science

  31. Effects of the Compressibility of Turbulence on the Dust Coagulation Process in Protoplanetary Disks

    Sakurai Yoshiki, Ishihara Takashi, Furuya Hitomi, Umemura Masayuki, Shiraishi Kenji

    ASTROPHYSICAL JOURNAL   Vol. 911 ( 2 )   2021.4

     More details

    Language:Japanese  

    DOI: 10.3847/1538-4357/abe9ba

    Web of Science

  32. Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

    Kangawa Yoshihiro, Kusaba Akira, Kempisty Pawel, Shiraishi Kenji, Nitta Shugo, Amano Hiroshi

    CRYSTAL GROWTH & DESIGN   Vol. 21 ( 3 ) page: 1878 - 1890   2021.3

     More details

    Language:Japanese  

    DOI: 10.1021/acs.cgd.0c01564

    Web of Science

  33. First-Principles Calculation of Copper Oxide Superconductors That Supports the Kamimura-Suwa Model

    Kamimura Hiroshi, Araidai Masaaki, Ishida Kunio, Matsuno Shunichi, Sakata Hideaki, Shiraishi Kenji, Sugino Osamu, Tsai Jaw-Shen

    CONDENSED MATTER   Vol. 5 ( 4 )   2020.12

  34. Negative-charge-storing mechanism of potassium-ion SiO2-based electrets for vibration-powered generators

    Nakanishi Toru, Miyajima Takeshi, Chokawa Kenta, Araidai Masaaki, Toshiyoshi Hiroshi, Sugiyama Tatsuhiko, Hashiguchi Gen, Shiraishi Kenji

    APPLIED PHYSICS LETTERS   Vol. 117 ( 19 )   2020.11

     More details

    Language:Japanese  

    DOI: 10.1063/5.0029012

    Web of Science

  35. カリウムイオンエレクトレットにおける負電荷蓄積機構の第一原理計算による検討 Invited Reviewed

    中西徹, 宮島岳史, 長川健太, 洗平昌晃, 白石賢二, 杉山達彦, 橋口原

    「センサ・マイクロマシンと応用システム」 シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編]   Vol. 37   page: 6   2020.10

  36. Hydrogen desorption from silicane and germanane crystals: Toward creation of free-standing monolayer silicene and germanene

    Araidai Masaaki, Itoh Mai, Kurosawa Masashi, Ohta Akio, Shiraishi Kenji

    JOURNAL OF APPLIED PHYSICS   Vol. 128 ( 12 )   2020.9

     More details

    Language:Japanese  

    DOI: 10.1063/5.0018855

    Web of Science

  37. Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study Invited Reviewed

    Tsunashi Shimizu, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi

    ECS Transactions   Vol. 98 ( 3 ) page: 37   2020.9

     More details

    Authorship:Last author  

  38. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

    Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 8 ) page: .   2020.8

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    Web of Science

  39. Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1-x(SiO2)x: First-Principles Exploration of Gate Oxides in GaN-Based Power Devices

    Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Shiozaki Koji, Kachi Tetsu, Oshiyama Atsushi, Shiraishi Kenji

    PHYSICAL REVIEW APPLIED   Vol. 14 ( 1 )   2020.7

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevApplied.14.014034

    Web of Science

  40. Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p-n diodes

    Nakano T., Harashima Y., Chokawa K., Shiraishi K., Oshiyama A., Kangawa Y., Usami S., Mayama N., Toda K., Tanaka A., Honda Y., Amano H.

    APPLIED PHYSICS LETTERS   Vol. 117 ( 1 )   2020.7

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0010664

    Web of Science

  41. Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H-SiC/SiO2 interface

    Shimizu Tsunashi, Akiyama Toru, Pradipto Abdul-Muizz, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.7

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ab85dd

    Web of Science

  42. Oxygen Incorporation Kinetics in Vicinal m(10-10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy

    Yosho Daichi, Shintaku Fumiya, Inatomi Yuya, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 14 ( 6 )   2020.6

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssr.202000142

    Web of Science

  43. Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE

    Shintaku Fumiya, Yosho Daichi, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 5 ) page: .   2020.5

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    Web of Science

  44. iop.org の [HTML] Full View Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H–SiC/SiO2 interface Invited Reviewed

    Tsunashi Shimizu, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi

    Japanese Journal of Applied Physics   Vol. 59 ( SM ) page: SMMD01   2020.4

     More details

    Authorship:Last author  

  45. Computational study of oxygen stability in vicinal m (10− 10)-GaN growth by MOVPE Invited Reviewed

    Fumiya Shintaku, Daichi Yosho, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano

    Applied Physics Express   Vol. 13 ( 5 ) page: 055507   2020.4

  46. A two-dimensional liquid-like phase on Ga-rich GaN (0001) surfaces evidenced by first principles molecular dynamics

    Bui Kieu My, Boero Mauro, Shiraishi Kenji, Oshiyama Atsushi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab650b

    Web of Science

  47. A two-dimensional liquid-like phase on Ga-rich GaN (0001) surfaces evidenced by first principles molecular dynamics Invited Reviewed

    Kieu My Bui, Mauro Boero, Kenji Shiraishi, Atsushi Oshiyama

    Japanese Journal of Applied Physics   Vol. 59 ( SG ) page: SGGK04   2020.2

  48. Computics Approach toward Clarification of Atomic Reactions during Epitaxial Growth of GaN

    Oshiyama Atsushi, Bui Kieu My, Boero Mauro, Kangawa Yoshihiro, Shiraishi Kenji

    2020 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2020)     page: 11 - 14   2020

     More details

  49. Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000(1)over-bar), and (1(1)over-bar00) surfaces

    Chokawa Kenta, Makino Emi, Hosokawa Norikazu, Onda Shoichi, Kangawa Yoshihiro, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 11 )   2019.11

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab4c21

    Web of Science

  50. First-principles study of pressure and SiO-incorporation effect on dynamical properties of silicon oxide

    Kageshima Hiroyuki, Yajima Yuji, Shiraishi Kenji, Endoh Tetsuo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 11 )   2019.11

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab4977

    Web of Science

  51. Effect of long-range Coulomb interactions on electron transport in a nanoscale one-dimensional ring

    Shiokawa Taro, Muraguchi Masakazu, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 11 )   2019.11

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab49aa

    Web of Science

  52. Theoretical studies on the switching mechanism of VMCO memories

    Nakanishi T., Chokawa K., Araidai M., Nakayama T., Shiraishi K.

    MICROELECTRONIC ENGINEERING   Vol. 215   2019.7

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mee.2019.110997

    Web of Science

  53. Self-forming and self-decomposing gallium oxide layers at the GaN/Al2O3 interfaces

    Chokawa Kenta, Shiraishi Kenji

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 6 )   2019.6

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/ab21b4

    Web of Science

  54. Influence of edge magnetization and electric fields on zigzag silicene, germanene and stanene nanoribbons

    Hattori Ayami, Yada Keiji, Araidai Masaaki, Sato Masatoshi, Shiraishi Kenji, Tanaka Yukio

    JOURNAL OF PHYSICS-CONDENSED MATTER   Vol. 31 ( 10 )   2019.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-648X/aaf8ce

    Web of Science

  55. First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy

    Bui Kieu My, Iwata Jun-Ichi, Kangawa Yoshihiro, Shiraishi Kenji, Shigeta Yasuteru, Oshiyama Atsushi

    JOURNAL OF CRYSTAL GROWTH   Vol. 507   page: 421-424   2019.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.11.031

    Web of Science

  56. Electronic structure analysis of core structures of threading dislocations in GaN

    Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)     page: .   2019

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/iciprm.2019.8819270

    Web of Science

  57. Physical Origin of Excellent Data Retention over 10years at sub-mu A Operation in AgW-Alloy Ionic Memory

    Yamaguchi Marina, Fujii Shosuke, Yoshimura Yoko, Nagasawa Riki, Asayama Yoshihiro, Shirakawa Hiroki, Araidai Masaaki, Shiraishi Kenji, Nakayama Takashi, Saitoh Masumi

    2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019)     page: 1 - 3   2019

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/IMW.2019.8739678

    Web of Science

  58. Atomistic study of SiN based ReRAM with high program/erase cycle endurance

    Yamaguchi Keita, Shirakawa Hiroki, Shiraishi Kenji

    IEICE ELECTRONICS EXPRESS   Vol. 15 ( 23 )   2018.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1587/elex.15.20180868

    Web of Science

  59. Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride

    Bui Kieu My, Iwata Jun-Ichi, Kangawa Yoshihiro, Shiraishi Kenji, Shigeta Yasuteru, Oshiyama Atsushi

    JOURNAL OF PHYSICAL CHEMISTRY C   Vol. 122 ( 43 ) page: 24665-24671   2018.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acs.jpcc.8b05682

    Web of Science

  60. Effects of annealing with CO and CO2 molecules on oxygen vacancy defect density in amorphous SiO2 formed by thermal oxidation of SIC

    Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji

    JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 13 )   2018.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5041794

    Web of Science

  61. Theoretical study of the atomistic behavior of O vacancy complexes with N and H atoms in the SiO2 layer of a metal-oxide-nitride-oxide-semiconductor memory: Physical origin of the irreversible threshold voltage shift observed in metal-oxide-nitride-oxide-semiconductor memories

    Shirakawa Hiroki, Araidai Masaaki, Kamiya Katsumasa, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.081101

    Web of Science

  62. Theoretical study of strain-induced modulation of the bandgap in SiC

    Chokawa Kenta, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 7 )   2018.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.071301

    Web of Science

  63. Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

    Kojima Eiji, Chokawa Kenta, Shirakawa Hiroki, Araidai Masaaki, Hosoi Takuji, Watanabe Heiji, Shiraishi Kenji

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 6 )   2018.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.11.061501

    Web of Science

  64. Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface (vol 11, 031002, 2018)

    Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Kachi Tetsu, Shiozaki Koji, Shiraishi Kenji

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 6 )   2018.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.11.069202

    Web of Science

  65. Reconsideration of Si pillar thermal oxidation mechanism

    Kageshima Hiroyuki, Shiraishi Kenji, Endoh Tetsuo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.06KD02

    Web of Science

  66. Oxygen concentration dependence of silicon oxide dynamical properties

    Yajima Yuji, Shiraishi Kenji, Endoh Tetsuo, Kageshima Hiroyuki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.06KD01

    Web of Science

  67. Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

    Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.04FJ03

    Web of Science

  68. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Akiyama Toru, Hori Shinsuke, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.04FR08

    Web of Science

  69. Investigation of the GaN/ Al2O3 Interface by First Principles Calculations

    Chokawa Kenta, Kojima Eiji, Araidai Masaaki, Shiraishi Kenji

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 255 ( 4 )   2018.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201700323

    Web of Science

  70. First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

    Nagura Takuya, Kawachi Shingo, Chokawa Kenta, Shirakawa Hiroki, Araidai Masaaki, Kageshima Hiroyuki, Endoh Tetsuo, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.04FB06

    Web of Science

  71. First principles study of the effect of hydrogen annealing on SiC MOSFETs

    Chokawa Kenta, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.04FR05

    Web of Science

  72. First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3 superlattice

    Shirakawa Hiroki, Araidai Masaaki, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.04FE08

    Web of Science

  73. Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface

    Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Kachi Tetsu, Shiozaki Koji, Shiraishi Kenji

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 3 )   2018.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.11.031002

    Web of Science

  74. Dust Coagulation Regulated by Turbulent Clustering in Protoplanetary Disks

    Ishihara Takashi, Kobayashi Naoki, Enohata Kei, Umemura Masayuki, Shiraishi Kenji

    ASTROPHYSICAL JOURNAL   Vol. 854 ( 2 )   2018.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3847/1538-4357/aaa976

    Web of Science

  75. Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN

    Nakano Takashi, Araidai Masaaki, Shiraishi Kenji, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8   Vol. 86 ( 12 ) page: 41-49   2018

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/08612.0041ecst

    Web of Science

  76. DFT modeling of carbon incorporation in GaN(0001) and GaN(000(1)over-bar) metalorganic vapor phase epitaxy

    Kempisty Pawel, Kangawa Yoshihiro, Kusaba Akira, Shiraishi Kenji, Krukowski Stanislaw, Bockowski Michal, Kakimoto Koichi, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 111 ( 14 )   2017.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4991608

    Web of Science

  77. Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories

    Shirakawa Hiroki, Yamaguchi Keita, Araidai Masaaki, Kamiya Katsumasa, Shiraishi Kenji

    IEICE TRANSACTIONS ON ELECTRONICS   Vol. E100C ( 10 ) page: 928-933   2017.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1587/transele.E100.C.928

    Web of Science

  78. First-principles study on adsorption structure and electronic state of stanene on alpha-alumina surface

    Araidai Masaaki, Kurosawa Masashi, Ohta Akio, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 9 )   2017.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.56.095701

    Web of Science

  79. Thermodynamic analysis of (0001) and (000(1)over-bar) GaN metalorganic vapor phase epitaxy

    Kusaba Akira, Kangawa Yoshihiro, Kempisty Pawel, Valencia Hubert, Shiraishi Kenji, Kumagai Yoshinao, Kakimoto Koichi, Koukitu Akinori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 7 )   2017.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.56.070304

    Web of Science

  80. First principles investigation of SiC/AlGaN(0001) band offset

    Kojima E., Endo K., Shirakawa H., Chokawa K., Araidai M., Ebihara Y., Kanemura T., Onda S., Shiraishi K.

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 758-760   2017.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2016.11.066

    Web of Science

  81. First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN

    Sekiguchi K., Shirakawa H., Yamamoto Y., Araidai M., Kangawa Y., Kakimoto K., Shiraishi K.

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 950-953   2017.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2016.12.044

    Web of Science

  82. Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy

    Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.56.04CJ04

    Web of Science

  83. Evaluation of energy band offset of Si 1-xSnx semiconductors by numerical calculation using density functional theory

    Nagae Yuki, Kurosawa Masashi, Araidai Masaaki, Nakatsuka Osamu, Shiraishi Kenji, Zaima Shigeaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.56.04CR10

    Web of Science

  84. Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons

    Hattori Ayami, Tanaya Sho, Yada Keiji, Araidai Masaaki, Sato Masatoshi, Hatsugai Yasuhiro, Shiraishi Kenji, Tanaka Yukio

    JOURNAL OF PHYSICS-CONDENSED MATTER   Vol. 29 ( 11 )   2017.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-648X/aa57e0

    Web of Science

  85. DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic Vaporphase epitaxy

    Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano

    Appl. Phys.Lett.   ( 111 ) page: 141602   2017

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  86. Defect Formation in SiO2 Formed by Thermal Oxidation of SiC

    Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji

    2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)     page: 242-243   2017

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  87. First Principles and Themodynamical Studies on Matel Organic Vaper Phase Epitaxy of GaN

    Shiraishi Kenji, Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi

    SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR   Vol. 80 ( 1 ) page: 295-301   2017

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/08001.0295ecst

    Web of Science

  88. Silicon Emission Mechanism for Oxidation Process of Non-Planar Silocon

    H.Kagechima, K.Shiraishi, T.Endoh

    ECS Transactions   Vol. 75 ( 5 ) page: 216-226   2016

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  89. Shape effects of GeSbTe nanodots on the near-field interaction with a silver triangle antenna Reviewed

    N Kojima, N Ota, K Asakawa, K Shiraishi, K Yamada

    Japanese Journal of Applied Physics   Vol. 54(4)   page: 025009   2015

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  90. First-principles calculations for initial oxidation processes of SiC surfaces: Effect of crystalline surface orientations Reviewed

    A Ito, T Akiyama, K Nakamura, T Ito, H Kageshima, M Uematsu, and Kenji Shiraishi

    Japanese Journal of Applied Physics   Vol. 54(10)   page: 101301   2015

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  91. First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence Reviewed

    T Akiyama, A Ito, K Nakamura, T Ito, H Kageshima, M Uematsu, and Kenji Shiraishi

    Surface Science   Vol. 641   page: 174-179   2015

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  92. Asymmetric Behavior of Current-induced magnetization swyching in a magnetic tunnel juction: Non-equilibrium first-principles Calculations Reviewed

    Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraisi

    Applied Physics Express   ( 7 ) page: 045202.1-3   2014.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  93. A QM/MM study of nitric oxide reductase-catalysed N2O formation Reviewed

    M. Shoji, K, Hanaoka, D. Kondo, A. Sato, H, Umeda, K. Kamiya, K. Shiraishi

    Molecular Physics: An International Journal at the Interface Between Chemistry and Physics   ( 112 ) page: 393-397   2014.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  94. A QM/MM study of nitric oxide reductase-catalysed N2O formation Reviewed

    M. Shoji, K, Hanaoka, D. Kondo, A. Sato, H, Umeda, K. Kamiya, K. Shiraishi

    International Journal of Quantum Chemistry,   ( 112 ) page: 393-397   2014.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  95. Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure Reviewed

    Y. Sakurai, K. Kakushima, K. Ohmori, K. Yamada, H. Iwai, K. Shiraishi, S. Nomura

    Optics Express   ( 22 ) page: 1997-2006   2014.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  96. Role of nitrogen incorporation into Al2O3-based resistive random-access memory Reviewed

    40. Moon Young Yang, Katsumasa Kamiya, Hiroki Shirakawa, Blanka Magyari-Köpe, Yoshio Nishi, Kenji Shiraishi

    Appl. Phys. Exp.   ( 7 ) page: 074202-074205   2014

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  97. GeTe sequences in superlattice phase change memories and their electrical characteristics Reviewed

    39. T. Ohyanagi, M. Kitamura, M. Araidai, S. Kato, N. Takaura, K. Shiraishi,

    Appl. Phys. Lett.   ( 104 ) page: 252106-252108   2014

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  98. Asymmetric behavior of current-induced magnetization switching in a magnetic tunnel junction: Non-equilibrium first-principles calculations Reviewed

    38. Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraishi,

    Appl. Phys. Exp.   ( 7 ) page: 045202-045204   2014

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  99. Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach Reviewed

    Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama

    Materials   ( 6 ) page: 3309-3360   2013.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  100. Nanoscale (-10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode Reviewed

    E. Cha, J. Woo, D. Lee, S. Lee, J. Song, Y. Koo, J. Lee, C. G. Park. M. Y. Yang, K. Kamiya, K. Shiraishi, B. Magyari-Köpe, Y. Nishi, H, Hwang

    Tech. Digest of 2013 International Electron Devices Meeting     page: P10.5.1-P10.5.4   2013.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  101. Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations Reviewed

    T. Ohyanagi, N. Takaura, M. Tai, K. Kitamura, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi

    Tech. Digest of 2013 International Electron Devices Meeting     page: P.30.5.1-P.30.5.4   2013.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  102. Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching Reviewed

    K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi

    IEEE Transactions on Electron Devices   ( 60 ) page: 3400-3406   2013.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  103. Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories Reviewed

    M. Y. Yang, K. Kamiya, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi

    Appl. Phys. Lett.   ( 103 ) page: 93504   2013.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  104. Interstitial oxygen induced Fermi level pinning in the Al2O3-based high-k MISFET with heavy-doped n-type poly-Si gates Reviewed

    M. Y. Yang, K. Kamiya, K. Shiraishi

    AIP Advances   ( 3 ) page: 102113   2013.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  105. Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories Reviewed

    K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi,

    ECS Trans. 58     page: 181-188   2013.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  106. Generalized Mechanism of the Resistance Switching in Binary-Oxide=Based Resistive Random-Access Memories Reviewed

    Katsumasa Kamiy, Moon Young Yang, Takahiro Nagata, Seong-Geon Park, Blanka Magyari-Köpe, Toyohiro Chikyow,Keisaku Yamada, Masaaki NIwa, Yoshio Nishi,Kenji Shiraisi

    Physical Review B   ( 87 ) page: 155201   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  107. Energetics and electron states of Au/Ag incorporated into crystalline/amorphous silicon Reviewed

    M. Y. Yang, K. Kamiya, T. Yamauchi, T. Nakayama, K. Shiraishi

    J. Appl. Phys.   ( 114 ) page: 63701   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  108. Effect of Coulomb interaction on multi-electronwave packet dynamics Reviewed

    T. Shiokawa, Y. Takada, S. Konabe, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi

    AIP Conf. Proc.   ( 1566 ) page: 421-422   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  109. Physical origins of ON-OFF switching in ReRAM via VO based conducting channels Reviewed

    K. Kamiya, M. Y. Yang, S-G. Park, B. Magyari-Köpe, Y. Nishi, M. Niwa, K. Shiraishi

    AIP Conf. Proc.   ( 1566 ) page: 11-12   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  110. Substrate-mediated proton relay mechanism for the religation reaction in topoisomerase II Reviewed

    K. Hanaoka, M. Shoji, D. Kondo, A. Sato, M. Y. Yang, K. Kamiya, K. Shiraishi

    Journal of Biomolecular Structure and Dynamics   ( 31 ) page: 1-7   2013.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  111. Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications Reviewed

    N. Takaura, T. Ohyanagi, M. Kitamura, M. Tai, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi,

    Tech. Digest of 2013 Symposium on VLSI Tech.     page: T130-T131   2013.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  112. Dynamical Study of Multi-Election Wave Packet in Nanoscale Structure Reviewed

    Kenji Shiraisi, Taro Shiokawa, Genki Fujita

    Jpn. J. Appl. Phys   ( 52 ) page: 04CJ06   2013.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  113. Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3 Insertion Layer

    M. Y. Yang, K. Kamiya, B. Magyari-Köpe, H. Momida, T. Ohno, M. Niwa, Y. Nishi, K. Shiraishi

    Jpn. J. Appl. Phys   ( 52 ) page: 04CD11   2013.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  114. On the important role of the anti-Jahn-Teller effect in underdoped cuprate superconductors Reviewed

    H. Kamimura, S. Matsuno, T. Mizokawa, K. Sasaoka, K. Shiraishi, H. Ushio

    J. Phys.: Conf. Ser.   ( 429 ) page: 12043   2013.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  115. Interacting Electron Wave Packet Dynamics in a Two-Dimensional Nanochannel Reviewed

    C. M. Puetter, S. Konabe, Y. Hatsugai, K. Ohmori, K. Shiraishi

    Appl. Phys. Exp.   ( 6 ) page: 65201   2013.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  116. Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H-SiC MOSFET Reviewed

    S. Onda, H. Watanabe, Y. Kito, H. Kondo, H. Uehigashi, N. Hosokawa, Y. Hisada, K. Shiraishi, H. Saka

    Phil. Mag. Lett.   ( 93 ) page: 439-447   2013

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  117. Calculation of the electron transfer coupling matrix element in diabatic reactions Reviewed

    M. Shoji, K. Hanaoka, A. Sato, Daiki Kondo, M. Y. Yang, K. Kamiya, K. Shiraishi,

    International Journal of Quantum Chemistry   ( 13 ) page: 342-347   2013

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  118. The dissociation modes of threading screw dislocations in 4H-SiC Reviewed

    S. Onda, H. Watanabe, Y. Kito, H. Kondo, H. Uehigashi, Y. Hisada, K. Shiraishi, H. Saka

    Phil. Mag. Lett.   ( 93 ) page: 591-600   2013

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  119. Theoretical Study of N incorporation Effect during SiC Oxidation Reviewed

    21. Shigenori Kato, Kenta Chokawa, Katsumasa Kamiya, Kenji Shiraishi,

    Materials Science Forum,     page: 740-742, 455-458   2013

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  120. A New-Type of Defect Generation at a 4H-SiC/SiO2 interface by Oxidation Induced Compressive Strain Reviewed

    20. Kenta Chokawa, Shigenori Kato, Katsumasa Kamiya, Kenji Shiraishi,

    Materials Science Forum,     page: 740-742, 469-472   2013

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  121. Origins of Negative Fixed Charge in Wet Oxidation for SiC Reviewed

    19. Katsumasa Kamiya, Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato, Kenji Shiraishi,

    Materials Science Forum     page: 740-742, 409-412   2013

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  122. Evaluation of Growth and Cleaning Rates of Chamber-Wall Deposition during Silicon Gate Etching Reviewed

    18. J. Tanaka K. Shiraishi

    e-Journal of Surface Science and Nanotechnology,   ( 11 ) page: 1-7   2013

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  123. Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule Reviewed

    Y. Takagi, K. Shiraishi, M. Kasu H. Sato,

    Surface Science,     page: 203?206   2013

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  124. Intrinsic origin of the breakdown of quasi-cubic approximation in nitride semiconductors Reviewed

    5. Y. Ebihara, K. Kamiya, K. Shiraishi . A. Yamaguchi,

    physica status solidi (c)   ( 8 ) page: 2279-2281   2012

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  125. Physics in Designing Desirable ReRAM Stack Structure -Atomistic Recipes Based on Oxygen Chemical Potential Control and Charge Injection/Removal

    4. Katsumasa Kamiya, Moon Young Yang, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi,

    Technical Digest of 2012 International Electron Devices Meeting,     page: 478-481   2012

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  126. Theoretical study of Si-based ionic switch Reviewed

    15. Takashi Yamauchi, Moon Young Yang, Katsumasa Kamiya, Kenji Shiraishi, Takashi Nakayama,

    Applied Physics Letters   ( 100 ) page: 203506-203509   2012

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  127. Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide Reviewed

    14. Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato, Katsumasa Kamiya, Kenji Shiraishi,

    Applied Physics Letters   ( 100 ) page: 212110-212112   2012

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  128. Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics Reviewed

    13. M. Arikawa, M. Muraguchi, Y. Hatsugai, K. Shiraishi, T. Endoh,

    ,Jpn. J. Appl. Phys. 51, Art.     page: 02BM03   2012

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  129. Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice Reviewed

    12. K. Kamiya, Y. Ebihara, M. Kasu, K. Shiraishi,

    Jpn. J. Appl. Phys. 51, Art.     page: 02BJ11   2012

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  130. Multi-Electron Wave Packet Dynamics in Applied Electric Field Reviewed

    11. Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi,

    Jpn. J. Appl. Phys. 51, Art.     page: 02BJ01   2012

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  131. ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels Reviewed

    10. K. Kamiya, M. Y. Yang, S.-G. Park,B. Magyari-Köpe,Y. Nishi, M. Niwa, K. Shiraishi

    Appl. Phys. Lett. 100, Art.     page: 073502   2012

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  132. Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material Reviewed

    N. Umezawa K. Shiraishi,,

    Appl. Phys. Lett. 100, Art.     page: 092904   2012

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  133. Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics Reviewed

    8. M. Arikawa, M. Muraguchi, Y. Hatsugai, K. Shiraishi, T. Endoh,

    Jpn. J. Appl. Phys. 51, Art.     page: 02BM03   2012

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  134. Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice Reviewed

    7. K. Kamiya, Y. Ebihara, M. Kasu, K. Shiraishi,

    Jpn. J. Appl. Phys. 51, Art.     page: 02BJ11   2012

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  135. Multi-Electron Wave Packet Dynamics in Applied Electric Field Reviewed

    6. Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi,

    Jpn. J. Appl. Phys. 51, Art.     page: 02BJ01   2012

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  136. Atomistic Design of Guiding Principles for High Quality Metal-Oxide-Nitride-Oxide-Semiconductor Memories:First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers Reviewed

    1. K. Yamguchi, A. Otake, K. Kamiya, Y. Shigeta, K. Shiraishi,

    Jpn. J. Appl. Phys. 50 Art.     page: 04DD05   2011

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  137. First Principle Study of the Stability of H Atoms in SiN Layers on MONOS-Type Memories During Program/Erase Operations

    3. K. Yamaguchi, A. Otake, K. Kamiya, Y. Shigeta, K. Shiraishi,

    Proceeding of 2011 International Conference on Simulation of Semiconductor Processes and Devices     page: 215-217   2011

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  138. Fundamental origin of excellent low-noise property in 3D Si-MOSFETs -Impact of charge-centroid in the channel due to quantum effect on 1/f noise-

    2. W. Feng, R. Hettiarachchi, Y. Lee, S. Sato, K. Kakushima, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, K. Shiraishi, H. Iwai, K. Ohmori,

    2011 Technical Digest of 2011 International Electron Devices Meetings   ( 27 ) page: 7-1-4   2011

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  139. Guiding Principle of Highly Scalable MONOS-Type Memory

    1. K. Shiraishi, K. Yamaguchi, K. Kamiya, A. Otake, Y. Shigeta,

    ESC Transaction,   ( 41-7 ) page: 71-78   2011

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  140. Calculation of the Electron Transfer Coupling Matrix Element in Diabatic Reactions Reviewed

    16. Mitsuo Shoji, Kyohei Hanaoka, Akimasa Sato, Daiki Kondo, Moon Young Yang, Katsumasa Kamiya, Kenji Shiraishi,

    International Journal of Quantum Chemistry, DOI: 10.1002/qua.     page: 24074   2011

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  141. An atomistic study on hydrogenation effects toward quality improvement of program/erase cycle of MONOS- type memory Reviewed

    4. Akira Otake, Keita Yamaguchi, Katsumasa Kamiya, Yasuteru Shigeta, Kenji Shiraishi,

    IEICE Transactions   ( E94-C ) page: 693-698   2011

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  142. Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency Reviewed

    3. K. Kamiya, Y. Ebihara, K. Shiraishi, M. Kasu,

    Appl. Phys. Lett. 99, Art.     page: 151108   2011

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  143. Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell Reviewed

    2. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh,

    Jpn. J. Appl. Phys. 50 Art.     page: 04DD04   2011

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

▼display all

Presentations 76

  1. ハイブリッド密度汎関数法による4H-SiC/SiO2界面におけるバンド配列の面方位依存性の理論解析

    松田隼, 秋山亨, 畠山哲夫, 白石賢二, 中山隆史

    第84回応用物理学会秋季学術講演会  2023.9.21 

     More details

    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール  

  2. GaN/SiO2界面のGaOx中間層におけるMgGa-Voの理論計算

    服部柊人, 押山淳, 白石賢二

    第84回応用物理学会秋季学術講演会  2023.9.22 

     More details

    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:市民会館  

  3. CVD 環境下におけるSiC表面ステップへの N原子取り込み機構の理論研究

    山内颯一郎, 水島一郎, 依田孝, 押山淳, 白石賢二

    第84回応用物理学会秋季学術講演会  2023.9.20 

     More details

    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:市民会館  

  4. InN MOVPE成長におけるTMI分解・反応経路の理論的解析

    長嶋佑哉, 渡邉浩崇, 新田州吾, 草場彰, 寒川義裕, 白石賢二

    第84回応用物理学会秋季学術講演会  2023.9.19 

     More details

    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:市民会館  

  5. GaN結晶中のMg凝集がMgアクセプタの電子状態に与える影響の第一原理計算を用いた評価

    狩野絵美, 長川健太, 小林功季, 大築立旺, 白石賢二, 押山淳, 五十嵐信行

    第84回応用物理学会秋季学術講演会  2023.9.22 

     More details

    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:市民会館  

  6. カリウムイオンエレクトレット帯電劣化メカニズムの第一原理計算による研究

    大畑慶記, 洗平昌晃, 石黒巧真, 三屋裕幸, 年吉洋, 芝田 泰, 橋口原, 白石賢二

    第84回応用物理学会秋季学術講演会  2023.9.23 

     More details

    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:熊本城ホール  

  7. 物質内包空間に存在するfloating電子状態とそのメモリー機能発現の第一原理計算による解明:フラッシュメモリーSiNの場合

    七瀧風五, 白石賢二, 押山淳

    日本物理学会 第78回年次大会  2023.9.19 

     More details

    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学  

  8. 第一原理計算によるゲルマニウム極薄膜結晶の磁性に関する研究

    石原大樹, 洗平昌晃, 山影相, 白石賢二

    日本物理学会 第78回年次大会  2023.9.16 

     More details

    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学  

  9. First Principles Studies on the Defect States in the Gate Dielectrics in GaN MOSFET Invited International conference

    Kenji Shiraishi

    The 32nd ICDS  2023.9.14 

     More details

    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Atlantic Sands Hotel & Conference Center   Country:United States  

  10. First Principles Studies on Mg Impurity Incorporation into GaN during MOVPE Growth International conference

    Takashi Kuroda, Lisa Mizuno, Shuto Hattori, Kenji Shiraishi

    ssdm 2023  2023.9.7 

     More details

    Event date: 2023.9

    Presentation type:Oral presentation (general)  

    Venue:Nagoya Congress Center   Country:Japan  

  11. Theoretical Study of Nitrogen Incorporation at the Steps on SiC(0001) Surface during CVD Growth International conference

    Souichiro Yamauchi, Ichiro Mizushima, Takashi Yoda, Atushi Oshiyama, Kenji Shiraishi

    ssdm 2023  2023.9.6 

     More details

    Event date: 2023.9

    Presentation type:Oral presentation (general)  

    Venue:Nagoya Congress Center   Country:Japan  

  12. Atomic and Electronic Structures of Basal Plane Dislocations (BPDs) in 4H-SiC -Atomistic Origin of Bipolar Degradation of SiC Devices International conference

    Masaki Sano, Jun Kojima, Shoichi Onda, Takashi Yoda, Takayuki Ohba, Kenji Shiraishi

    ssdm 2023  2023.9.6 

     More details

    Event date: 2023.9

    Presentation type:Oral presentation (general)  

    Venue:Nagoya Congress Center   Country:Japan  

  13. Theoretical Study of the Gas-Phase Reaction of Hexachlorodisilane by Thermodynamic Analysis and Kinetics Calculation International conference

    Tomoya Nagahashi, Hajime Karasawa, Ryota Horiike, Kenji Shiraishi

    ssdm 2023  2023.9.8 

     More details

    Event date: 2023.9

    Presentation type:Oral presentation (general)  

    Venue:Nagoya Congress Center   Country:Japan  

  14. First Principles Studies on the Defect States in the Gate Dielectrics in GaN MOSFET International conference

    Kenji Shiraishi

    WCAM2023  2023.5.9 

     More details

    Event date: 2023.5

    Presentation type:Oral presentation (general)  

    Venue:Shinagawa Prince Hotel   Country:Japan  

  15. カリウムイオンエレクトレット内への炭素混入の影響

    桐越大貴,大畑慶記,洗平昌晃,石黒巧真,三屋裕幸,年吉洋,芝田泰,橋口原,白石賢二

    第70回応用物理学会春季学術講演会  2023.3.16 

     More details

    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  16. GaNにおけるMgアクセプターの拡散機構の理論的検討

    制野かおり押山淳,櫻井亮介,白石賢二

    第70回応用物理学会春季学術講演会  2023.3.17 

     More details

    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  17. STT-MRAMにおけるMgO薄膜中の粒界によるデータ保持性能への影響の第一原理計算による解析

    森下佳祐,原嶋庸介,洗平昌晃,遠藤哲郎,白石賢二

    第28回電子デバイス界面テクノロジー研究会  2023.2.3 

     More details

    Event date: 2023.2

    Language:Japanese   Presentation type:Oral presentation (general)  

  18. アモルファスSi3N4中のトラップ欠陥の第一原理計算による研究

    七瀧風五,押山淳,岩田潤一,松下雄一郎,白石賢二

    第28回電子デバイス界面テクノロジー研究会  2023.2.4 

     More details

    Event date: 2023.2

    Language:Japanese   Presentation type:Oral presentation (general)  

  19. 帯電材料カリウムイオンエレクトレットの水素のよる劣化の第一原理計算による研究

    大畑慶記,洗平昌晃,石黒巧真,三屋裕幸,年吉洋,柴田泰,橋口原,白石賢二

    第28回電子デバイス界面テクノロジー研究会  2023.2.4 

     More details

    Event date: 2023.2

    Language:Japanese   Presentation type:Oral presentation (general)  

  20. CVD成長環境におけるSiCステップ端でのN原子取り込み機構の理論研究

    山内颯一郎,水島一郎,依田孝,押山淳,白石賢二

    第22回日本表面真空学会中部支部学術講演会  2022.12.17 

     More details

    Event date: 2022.12

    Language:Japanese   Presentation type:Oral presentation (general)  

  21. Charge Traps in H Incorporated SiN in 3D NAND Memories International conference

    F. Nanataki, A. Oshiyama, K. Shiraishi

    53rd IEEE Semiconductor Interface Specialists Conference  2022.12.8 

     More details

    Event date: 2022.12

    Language:English   Presentation type:Poster presentation  

    Venue:San Diego, CA  

  22. Physics in Very Shallow Trap Formation at SiC/SiO2 Interfaces International conference

    K. Shiraishi, K. Chokawa

    53rd IEEE Semiconductor Interface Specialists Conference  2022.12.8 

     More details

    Event date: 2022.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Diego, CA  

  23. AlN・InN MOVPE成長におけるTMA・TMI分解経路の理論的解析

    長嶋佑哉,赤石大地,新田州吾,草場彰,寒川義裕,白石賢二

    第14回ナノ構造エピタキシャル成長講演会  2022.11.24 

     More details

    Event date: 2022.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  24. MOVPE成長過程におけるTMAとTMI分解に関する第一原計算

    長嶋佑哉,赤石大地,新田州吾,草場彰,寒川義裕,白石賢二

    第41回電子材料シンポジウム  2022.10.21 

     More details

    Event date: 2022.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  25. レート方程式による GaN MOVPE の成長シミュレーション

    佐野雅季,長嶋佑哉,草場彰,寒川義裕,白石賢二

    第41回電子材料シンポジウム  2022.10.21 

     More details

    Event date: 2022.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  26. Microscopic Physical Origin of Charge Traps in 3D NAND Flash Memories International conference

    F. Nanataki, J. Iwata, K. Chokawa, M. Araidai, A. Oshiyama, K. Shiraishi

    International Conference on Solid State Device and Materials (SSDM2022)  2022.9.28 

     More details

    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari Messe  

  27. Impact of Grain Boundaries in MgO Layer on Data Retention Performance of STT-MRAM International conference

    K. Morishita, Y. Harashima, M. Araidai, T. Endoh, K. Shiraishi

    International Conference on Solid State Device and Materials (SSDM2022)  2022.9.29 

     More details

    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari Messe  

  28. Theoretical Study of the Influence of GaOx Layer on the SiO2/GaN Interface International conference

    S. Hattori, A. Oshiyama, S. Miyazaki, H. Watanabe, K. Ueno, R. Tanaka, T. Kondo, S. Takashima, M. Edo, K. Shiraishi

    International Conference on Solid State Device and Materials (SSDM2022)  2022.9.28 

     More details

    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari Messe  

  29. カリウムイオンエレクトレット内での水素原子の拡散経路

    大畑慶記,洗平昌晃,石黒巧真,三屋裕幸,年吉洋,柴田泰,橋口原,白石賢二

    第83回応用物理学会秋季学術講演会  2022.9.21 

     More details

    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  30. 磁気トンネル接合内のFe/MgO/Fe構造内の水素不純物が界面垂直磁気異方性に与える影響

    名和卓哉,森下佳祐,洗平昌晃,遠藤哲郎,白石賢二

    第83回応用物理学会秋季学術講演会  2022.9.21 

     More details

    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  31. 第一原理計算によるSiO2/GaN界面の中間層の研究

    服部柊人,押山淳,白石賢二,宮崎誠一,渡部平司,上野勝典,田中亮,近藤剣,高島信也,江戸雅晴

    第83回応用物理学会秋季学術講演会  2022.9.22 

     More details

    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  32. First-principles study of the effect of hydrogen on potassium-ion electrets International conference

    Y. Ohata, M. Araidai, T. Ishiguro, H. Mitsuya, H. Toshiyoshi, Y. Shibata, G. Hashiguchi, K. Shiraishi

    9th International Symposium on Control of Semiconductor Interfaces  2022.9.6 

     More details

    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University  

  33. First Principles Studies on the Effect of Grain Boundaries in MgO on Interfacial Perpendicular Magnetic Anisotropy Energy at Fe/MgO Interface in STT-MRAM

    2022.3.24 

     More details

    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  34. カリウムイオンエレクトレットの高性能化の指針と水素の影響の理論検討

    大畑慶記,中西徹,長川健太,洗平昌晃,石黒巧真,三屋裕幸,年吉洋,芝田泰,橋口原,白石賢二

    第69回応用物理学会春季学術講演会  2022.3.26 

     More details

    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス+オンライン  

  35. 熱力学的解析によるp型GaNのHVPE法におけるキャリアガスの特定

    長嶋佑哉,木村友哉,洗平昌晃,長川健太,草場彰,寒川義裕,白石賢二

    第69回応用物理学会春季学術講演会  2022.3.25 

     More details

    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス+オンライン  

  36. 強誘電HfO2薄膜の安定性と誘電特性:第一原理計算による検討

    牧芳和,新井千慧,洗平昌晃,白石賢二,中山隆史

    第69回応用物理学会春季学術講演会  2022.3.24 

     More details

    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス+オンライン  

  37. 4H-SiC/SiO2界面での窒素酸化物およびアンモニアの反応機構の理論的検討

    秋山亨,清水紀志,伊藤智徳,影島博之,白石賢二

    第69回応用物理学会春季学術講演会  2022.3.24 

     More details

    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス+オンライン  

  38. GaN/SiO2界面のホールトラップの原因の理論的究明とその対策

    服部柊人,長川健太,押山淳,白石賢二

    第69回応用物理学会春季学術講演会  2022.3.24 

     More details

    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス+オンライン  

  39. MgO中の粒界がSTT-MRAMのFe/MgOの界面垂直磁気異方性に与える影響の理論的研究

    森下佳祐,原嶋庸介,洗平昌晃,遠藤哲郎,白石賢二

    第27回 電子デバイス界面テクノロジー研究会  2022.1.28 

     More details

    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:Online  

  40. CVD 成長環境下における SiC 微斜面への水素被覆の理論研究

    木村友哉,長川健太,押山淳,白石賢二

    第27回 電子デバイス界面テクノロジー研究会  2022.1.29 

     More details

    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:Online  

  41. GaN複合空孔の電子構造の第一原理計算による研究

    櫻井亮介,長川健太,押山淳,白石賢二

    第27回 電子デバイス界面テクノロジー研究会  2022.1.29 

     More details

    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:Online  

  42. AlN MOVPEにおけるトリメチルアルミニウム分解反応の理論的考察

    赤石大地,洗平昌晃,白石賢二

    第27回 電子デバイス界面テクノロジー研究会  2022.1.29 

     More details

    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:Online  

  43. Ab initio-based approach for reaction process at 4H-SiC/SiO2 interfaces International conference

    T. Akiyama, T. Shimizu, T. Ito, H. Kageshima, K. Shiraishi

    The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022)  2022.1.11 

     More details

    Event date: 2022.1

    Language:English   Presentation type:Oral presentation (invited, special)  

  44. First-principles study of two-dimensional materials of group IV elements International conference

    M. Araidai, M. Itoh, M. Kurosawa, A. Ohta, K. Shiraishi

    The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022)  2022.1.12 

     More details

    Event date: 2022.1

    Presentation type:Oral presentation (invited, special)  

  45. Density Functional Theory study of Step Flow Growth of Gallium Nitride International conference

    K. M. Bui, K. Shiraishi, A. Oshiyama

    The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022)  2022.1.12 

     More details

    Event date: 2022.1

    Language:English   Presentation type:Oral presentation (invited, special)  

  46. First principles studies of the effects of carbon atoms on the potassium-ion electret used in vibration-powered generators International conference

    Y. Ohata, M. Araidai, Y. Shibata, G. Hashiguchi, K. Shiraishi

    The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022)  2022.1.12 

     More details

    Event date: 2022.1

    Language:English   Presentation type:Oral presentation (general)  

  47. First-Principles Investigation of Hydrogen Adsorption on Stepped SiC Surface during CVD Growth International conference

    T. Kimura, K. Chokawa, A. Oshiyama, K. Shiraishi

    The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022)  2022.1.12 

     More details

    Event date: 2022.1

    Language:English   Presentation type:Oral presentation (general)  

  48. 第一原理計算による4H-SiC(0001)表面近傍での炭素空孔の取り込みやすさに関する研究

    中島響,醍醐佳明,長川健太,白石賢二

    第 21 回 日本表面真空学会中部支部 学術講演会  2021.12.18 

     More details

    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:Online  

  49. Effects of carbon atoms on the reliability of the potassium-ion electret used in vibration-powered generators International conference

    Y. Ohata, M. Araidai, Y. Shibata, G. Hashiguchi, K. Shiraishi

    International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES – SCIENCE AND TECHNOLOGY – (2021 IWDTF) 

     More details

    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

  50. Development of Physically Informed Neural Network Potential International conference

    S. Ito, M. Araidai, K. Shiraishi

    International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021) 

     More details

    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

  51. First Principles Studies on Atomic and Electronic Structures of VGa-VN divacancies International conference

    R. Sakurai, K. Chokawa, A. Oshiyama, K. Shiraishi

    International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021) 

     More details

    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

  52. First-principles studies on the effects of O atoms in the substrate on the oxidation of a vertical Si nanopillar International conference

    F. Nanataki, M. Araidai, H. Kageshima, K. Shiraishi

    International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021) 

     More details

    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

  53. First-principles Calculations between Screw Dislocation with Mg, H Impurities on GaN International conference

    N. Inoue, Y. Harashima, K. Chokawa, K. Shiraishi, A. Oshiyama

    International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021) 

     More details

    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

  54. 本当のパワーデバイス材料をデータサイエンスで作るには?

    白石賢二

    複相機能開拓拠点ワークショップ  2021.11.2 

     More details

    Event date: 2021.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:AP日本橋  

  55. ニューラルネットワークを用いた新規ペアポテンシャルの開発

    伊藤匠哉,洗平昌晃,白石賢二

    日本物理学会 2021年秋季大会  2021.9.21 

     More details

    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:Online  

  56. CVD 成長における SiC 微斜面への水素被覆の理論研究

    木村友哉,長川健太,押山淳,白石賢二

    第82回応用物理学会秋季学術講演会  2021.9.10 

     More details

    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:Online  

  57. Kイオンエレクトレットの負電荷蓄積機構及び作製指針の理論的検討 Invited

    中西徹,長川健太,洗平昌晃,年吉洋,杉山達彦,橋口原,白石賢二

    第82回応用物理学会秋季学術講演会  2021.9.12 

     More details

    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:Online  

  58. Fe/MgO界面への窒素不純物が磁気異方性とTMRに与える影響について Invited

    小川湧太郎,洗平昌晃,遠藤哲郎,白石賢二

    第82回応用物理学会秋季学術講演会  2021.9.12 

     More details

    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:Online  

  59. Theoretical Study of H Adsorption on Stepped SiC Surface during CVD Growth International conference

    T. Kimura, K. Chokawa, A. Oshiyama and K. Shiraishi

    2021 International Conference on Solid State Devices and Materials (SSDM2021) 

     More details

    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (general)  

  60. First Principles Studies of Impurity Dislocation Complexes in GaN International conference

    Kenji Shiraishi

    THERMEC'2021 INTERNATIONAL CONFERENCE ON PROCESSING &MANUFACTURING OF ADVANCED MATERIALS 

     More details

    Event date: 2021.6

    Language:English   Presentation type:Oral presentation (invited, special)  

  61. Effect of Electric Field in Multi-Electron Wave Packet Dynamics in Channel of Nanoscale devices International conference

    G.Fujita, T.shiokawa, Y.Takeda, S.Konabe, M.Muraguchi, T.Yamamoto, T.Endo, Y.Hatsugai, K.Shiraishi

    ISANN 2013 

     More details

    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  62. SiC酸化により引き起こされるSi欠陥への第一原理計算からの考察

    長川健太、神谷克政、洗平昌晃、白石賢二

    先進パワー半導体研究会 

     More details

    Event date: 2013.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:埼玉会館   Country:Japan  

  63. Multi-Electron Wave Packets Dynamics under MOSFET-like Potentials International conference

    T.Shiokawa, G.Fujita, Y.Takeda, S.Konabe, M.Muraguchi, T.Yamamoto, T.Endo, Y.Hatsugai, K.Shiraishi

    ISANN 2013 

     More details

    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  64. Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories International conference

    K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi and K. Shiraishi

    224th Meeting of Electrochemical Society 

     More details

    Event date: 2013.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  65. 4H-Sicの熱酸化速度の理論的研究-Si面とC面の酸化速度の相違-

    丸山翔太郎、遠藤賢太郎、長川健太、神谷克政、白石賢二

    応用物理学会秋季学術講演会 

     More details

    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学   Country:Japan  

  66. Intrinsic SiC Oxidation Problems Obtained by First Principle Calculations International conference

    K. Shiraishi, K. Chokawa and K. Kamiya

    International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013) 

     More details

    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  67. Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM) International conference

    K. Shiraishi, M.Y. Yang, S.Kato, M. Araidai, K. Kamiya, T. Yamamoto, T. Ohyanagi, N. Takaura, M. Niwa, B. Magyari-Kope, and Y. Nishi

    2013 International Conference on Solid State Devices and Materials 

     More details

    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  68. 超格子材料を用いた低電力動作相変化デバイス

    森川貴博、大柳孝純、木下勝治、田井光春、秋田憲一、高浦則克、加藤重徳、洗平昌晃、神谷克政、山本貴博、白石賢二

    応用物理学会秋季学術講演会 

     More details

    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学   Country:Japan  

  69. 4H-Sic表面のNO初期酸化過程の理論的検討

    遠藤賢太郎、丸山翔太郎、加藤重徳、神谷克政、白石賢二

    応用物理学会秋季学術講演会 

     More details

    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学   Country:Japan  

  70. First principles material design toward nano-scale memory functional devices triggered by carrier injection International conference

    Kenji Shiraishi

    BIT's 2nd Annual World Congress of Advanced Materials-2013 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  71. First Principles Studies on the Atomistic Processes of GaN Metal Organic Vapor Phase Epitaxy (MOVPE) International conference

    Kenji Shiraishi

    V-ASET2021 5th Edition of Applied Science, Engineering and Technology Virtual  2021.12.13 

     More details

    Event date: 2012.12 - 2021.12

    Language:English   Presentation type:Oral presentation (invited, special)  

  72. First Principles Guiding Principles for the Switching Process in Oxide ReRAM International conference

    3. Kenji Shiraishi, Moon Young Yang, Katsumasa Kamiya, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi,

    2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology 

     More details

    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:China  

  73. On-Off Switching Mechanism of Oxide Based ReRAM by Ab Initio Electronic Structure Calculations International conference

    Kenji Shiraishi, Moon Young Yang, Katsumasa Kamiya, Hiroyoshi Momida, Blanka Magyari-Köpe, Takahisa Ohno, Masaaki Niwa, Yoshio Nishi

    2nd International Workshop on Resistive RAM, 

     More details

    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  74. Computational Study toward Micro Electronics Engineering International conference

    5. Kenji Shiraishi, Keita Yamaguchi, Moon Young Yang, Seong-Geon Park, Katsumasa Kamiya, Yasuteru Shigeta, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi

    2012 28th International Conference on Microelectronics, 

     More details

    Event date: 2012.5

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Serbia  

  75. Computational Science Studies toward Future Nano-Devices International conference

    K. Shiraishi

    WIMNACT Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology 

     More details

    Event date: 2012

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  76. Guiding Principle of Highly Scalable MONOS-Type Memory International conference

    1. K. Shiraishi, K. Yamaguchi, K. Kamiya, A. Otake, Y. Shigeta,

    220th Electrochemical Society Meeting, 

     More details

    Event date: 2011.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

▼display all

KAKENHI (Grants-in-Aid for Scientific Research) 1

  1. Synthesis of New Group IV Two Dimensional Materials

    Grant number:15H03564  2015.4 - 2018.3

    Shiraishi Kenji

      More details

    Authorship:Principal investigator 

    Grant amount:\17420000 ( Direct Cost: \13400000 、 Indirect Cost:\4020000 )

    We performed first principles calculations of of silicene and germanene and clarified the atomic and electronic structures. First, we performed electronic structure of silicene and germanene on Al2O3 insulators. As a result, band structures of silicene and germanene keep dirac cone characteristic at K point even after it is adsorbed on Al2O3. However, band structures are slightly modified dependeng of the adsorbed structures of silicene and gemanene.

 

Academic Activities 3

  1. 電子デバイス界面テクノロジー研究会 組織委員 International contribution

    Role(s):Planning, management, etc., Review, evaluation, Peer review

    応用物理学会  2023.2

     More details

    Type:Academic society, research group, etc. 

  2. Semiconductor Interface Specialist Conference Program Committee International contribution

    Role(s):Planning, management, etc., Review, evaluation, Peer review

    IEEE  2022.12

     More details

    Type:Academic society, research group, etc. 

  3. ISCSI-I Program Committee International contribution

    Role(s):Planning, management, etc., Review, evaluation, Peer review

    JSAP  ( Nagoya University ) 2022.9

     More details

    Type:Academic society, research group, etc.