Updated on 2021/03/25

写真a

 
SHIRAISHI Kenji
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Multiphysics Simulation Section Professor
Title
Professor
Contact information
メールアドレス

Research History 6

  1. 名古屋大学大学院工学研究科 計算理工学専攻 教授

    2013.5

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    Country:Japan

  2. 筑波大学 教授 大学院数理物質科学研究科

    2007.10 - 2013.5

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    Country:Japan

  3. 筑波大学 准教授 大学院数理物質科学研究科

    2007.4 - 2007.10

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    Country:Japan

  4. 筑波大学 助教授 大学院数理物質科学研究科

    2004.4 - 2007.3

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    Country:Japan

  5. 筑波大学 助教授 物理学系

    2001.1 - 2004.3

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    Country:Japan

  6. 日本電信電話株式会社

    1988.4 - 2000.12

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    Country:Japan

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Education 1

  1. The University of Tokyo   Graduate School, Division of Science

    1978.4 - 1988.3

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    Country: Japan

Professional Memberships 6

  1. 日本表面科学会   認証事業委員会委員

    2012.4

  2. 日本物理学会   領域4領域代表

    2011.10

  3. 日本物理学会   領域4領域副代表

    2010.10 - 2011.9

  4. 日本表面科学会   日本表面科学会フェロー会員

    2010.5

  5. 応用物理学会   JJAP編集委員

    2007.4 - 2010.3

  6. 応用物理学会   応用物理編集委員

    2000.4 - 2002.3

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Papers 106

  1. Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation

    Shimizu Tsunashi, Akiyama Toru, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

  2. First-Principles Calculation of Copper Oxide Superconductors That Supports the Kamimura-Suwa Model

    Kamimura Hiroshi, Araidai Masaaki, Ishida Kunio, Matsuno Shunichi, Sakata Hideaki, Shiraishi Kenji, Sugino Osamu, Tsai Jaw-Shen

    CONDENSED MATTER   Vol. 5 ( 4 )   2020.12

  3. Negative-charge-storing mechanism of potassium-ion SiO2-based electrets for vibration-powered generators

    Nakanishi Toru, Miyajima Takeshi, Chokawa Kenta, Araidai Masaaki, Toshiyoshi Hiroshi, Sugiyama Tatsuhiko, Hashiguchi Gen, Shiraishi Kenji

    APPLIED PHYSICS LETTERS   Vol. 117 ( 19 )   2020.11

  4. Hydrogen desorption from silicane and germanane crystals: Toward creation of free-standing monolayer silicene and germanene

    Araidai Masaaki, Itoh Mai, Kurosawa Masashi, Ohta Akio, Shiraishi Kenji

    JOURNAL OF APPLIED PHYSICS   Vol. 128 ( 12 )   2020.9

  5. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

    Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 8 ) page: .   2020.8

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  6. Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1-x(SiO2)x: First-Principles Exploration of Gate Oxides in GaN-Based Power Devices

    Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Shiozaki Koji, Kachi Tetsu, Oshiyama Atsushi, Shiraishi Kenji

    PHYSICAL REVIEW APPLIED   Vol. 14 ( 1 )   2020.7

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    DOI: 10.1103/PhysRevApplied.14.014034

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  7. Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p-n diodes

    Nakano T., Harashima Y., Chokawa K., Shiraishi K., Oshiyama A., Kangawa Y., Usami S., Mayama N., Toda K., Tanaka A., Honda Y., Amano H.

    APPLIED PHYSICS LETTERS   Vol. 117 ( 1 )   2020.7

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    DOI: 10.1063/5.0010664

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  8. Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H-SiC/SiO2 interface

    Shimizu Tsunashi, Akiyama Toru, Pradipto Abdul-Muizz, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.7

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    DOI: 10.35848/1347-4065/ab85dd

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  9. Oxygen Incorporation Kinetics in Vicinal m(10-10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy

    Yosho Daichi, Shintaku Fumiya, Inatomi Yuya, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 14 ( 6 )   2020.6

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    DOI: 10.1002/pssr.202000142

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  10. Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE

    Shintaku Fumiya, Yosho Daichi, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 5 ) page: .   2020.5

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  11. A two-dimensional liquid-like phase on Ga-rich GaN (0001) surfaces evidenced by first principles molecular dynamics

    Bui Kieu My, Boero Mauro, Shiraishi Kenji, Oshiyama Atsushi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.7567/1347-4065/ab650b

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  12. Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000(1)over-bar), and (1(1)over-bar00) surfaces

    Chokawa Kenta, Makino Emi, Hosokawa Norikazu, Onda Shoichi, Kangawa Yoshihiro, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 11 )   2019.11

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    DOI: 10.7567/1347-4065/ab4c21

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  13. Effect of long-range Coulomb interactions on electron transport in a nanoscale one-dimensional ring

    Shiokawa Taro, Muraguchi Masakazu, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 11 )   2019.11

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    DOI: 10.7567/1347-4065/ab49aa

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  14. First-principles study of pressure and SiO-incorporation effect on dynamical properties of silicon oxide

    Kageshima Hiroyuki, Yajima Yuji, Shiraishi Kenji, Endoh Tetsuo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 11 )   2019.11

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    DOI: 10.7567/1347-4065/ab4977

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  15. Theoretical studies on the switching mechanism of VMCO memories

    Nakanishi T., Chokawa K., Araidai M., Nakayama T., Shiraishi K.

    MICROELECTRONIC ENGINEERING   Vol. 215   2019.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mee.2019.110997

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  16. Self-forming and self-decomposing gallium oxide layers at the GaN/Al2O3 interfaces

    Chokawa Kenta, Shiraishi Kenji

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 6 )   2019.6

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    DOI: 10.7567/1882-0786/ab21b4

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  17. Influence of edge magnetization and electric fields on zigzag silicene, germanene and stanene nanoribbons

    Hattori Ayami, Yada Keiji, Araidai Masaaki, Sato Masatoshi, Shiraishi Kenji, Tanaka Yukio

    JOURNAL OF PHYSICS-CONDENSED MATTER   Vol. 31 ( 10 )   2019.3

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    DOI: 10.1088/1361-648X/aaf8ce

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  18. First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy

    Bui Kieu My, Iwata Jun-Ichi, Kangawa Yoshihiro, Shiraishi Kenji, Shigeta Yasuteru, Oshiyama Atsushi

    JOURNAL OF CRYSTAL GROWTH   Vol. 507   page: 421-424   2019.2

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    DOI: 10.1016/j.jcrysgro.2018.11.031

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  19. Electronic structure analysis of core structures of threading dislocations in GaN

    Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)     page: .   2019

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  20. Physical Origin of Excellent Data Retention over 10years at sub-mu A Operation in AgW-Alloy Ionic Memory

    Yamaguchi Marina, Fujii Shosuke, Yoshimura Yoko, Nagasawa Riki, Asayama Yoshihiro, Shirakawa Hiroki, Araidai Masaaki, Shiraishi Kenji, Nakayama Takashi, Saitoh Masumi

    2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019)     page: 1-3   2019

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  21. Atomistic study of SiN based ReRAM with high program/erase cycle endurance

    Yamaguchi Keita, Shirakawa Hiroki, Shiraishi Kenji

    IEICE ELECTRONICS EXPRESS   Vol. 15 ( 23 )   2018.12

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    DOI: 10.1587/elex.15.20180868

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  22. Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride

    Bui Kieu My, Iwata Jun-Ichi, Kangawa Yoshihiro, Shiraishi Kenji, Shigeta Yasuteru, Oshiyama Atsushi

    JOURNAL OF PHYSICAL CHEMISTRY C   Vol. 122 ( 43 ) page: 24665-24671   2018.11

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    DOI: 10.1021/acs.jpcc.8b05682

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  23. Effects of annealing with CO and CO2 molecules on oxygen vacancy defect density in amorphous SiO2 formed by thermal oxidation of SIC

    Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji

    JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 13 )   2018.10

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    DOI: 10.1063/1.5041794

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  24. Theoretical study of the atomistic behavior of O vacancy complexes with N and H atoms in the SiO2 layer of a metal-oxide-nitride-oxide-semiconductor memory: Physical origin of the irreversible threshold voltage shift observed in metal-oxide-nitride-oxide-semiconductor memories

    Shirakawa Hiroki, Araidai Masaaki, Kamiya Katsumasa, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.081101

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  25. Theoretical study of strain-induced modulation of the bandgap in SiC

    Chokawa Kenta, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 7 )   2018.7

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    DOI: 10.7567/JJAP.57.071301

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  26. Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

    Kojima Eiji, Chokawa Kenta, Shirakawa Hiroki, Araidai Masaaki, Hosoi Takuji, Watanabe Heiji, Shiraishi Kenji

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 6 )   2018.6

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    DOI: 10.7567/APEX.11.061501

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  27. Oxygen concentration dependence of silicon oxide dynamical properties

    Yajima Yuji, Shiraishi Kenji, Endoh Tetsuo, Kageshima Hiroyuki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06KD01

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  28. Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface (vol 11, 031002, 2018)

    Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Kachi Tetsu, Shiozaki Koji, Shiraishi Kenji

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 6 )   2018.6

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    DOI: 10.7567/APEX.11.069202

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  29. Reconsideration of Si pillar thermal oxidation mechanism

    Kageshima Hiroyuki, Shiraishi Kenji, Endoh Tetsuo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06KD02

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  30. Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

    Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.04FJ03

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  31. First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3 superlattice

    Shirakawa Hiroki, Araidai Masaaki, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.04FE08

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  32. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Akiyama Toru, Hori Shinsuke, Nakamura Kohji, Ito Tomonori, Kageshima Hiroyuki, Uematsu Masashi, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.04FR08

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  33. Investigation of the GaN/ Al2O3 Interface by First Principles Calculations

    Chokawa Kenta, Kojima Eiji, Araidai Masaaki, Shiraishi Kenji

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 255 ( 4 )   2018.4

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    DOI: 10.1002/pssb.201700323

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  34. First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

    Nagura Takuya, Kawachi Shingo, Chokawa Kenta, Shirakawa Hiroki, Araidai Masaaki, Kageshima Hiroyuki, Endoh Tetsuo, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.04FB06

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  35. First principles study of the effect of hydrogen annealing on SiC MOSFETs

    Chokawa Kenta, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.04FR05

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  36. Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface

    Chokawa Kenta, Narita Tetsuo, Kikuta Daigo, Kachi Tetsu, Shiozaki Koji, Shiraishi Kenji

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 3 )   2018.3

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    DOI: 10.7567/APEX.11.031002

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  37. Dust Coagulation Regulated by Turbulent Clustering in Protoplanetary Disks

    Ishihara Takashi, Kobayashi Naoki, Enohata Kei, Umemura Masayuki, Shiraishi Kenji

    ASTROPHYSICAL JOURNAL   Vol. 854 ( 2 )   2018.2

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    DOI: 10.3847/1538-4357/aaa976

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  38. Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN

    Nakano Takashi, Araidai Masaaki, Shiraishi Kenji, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8   Vol. 86 ( 12 ) page: 41-49   2018

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/08612.0041ecst

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  39. DFT modeling of carbon incorporation in GaN(0001) and GaN(000(1)over-bar) metalorganic vapor phase epitaxy

    Kempisty Pawel, Kangawa Yoshihiro, Kusaba Akira, Shiraishi Kenji, Krukowski Stanislaw, Bockowski Michal, Kakimoto Koichi, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 111 ( 14 )   2017.10

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    DOI: 10.1063/1.4991608

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  40. Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories

    Shirakawa Hiroki, Yamaguchi Keita, Araidai Masaaki, Kamiya Katsumasa, Shiraishi Kenji

    IEICE TRANSACTIONS ON ELECTRONICS   Vol. E100C ( 10 ) page: 928-933   2017.10

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    DOI: 10.1587/transele.E100.C.928

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  41. First-principles study on adsorption structure and electronic state of stanene on alpha-alumina surface

    Araidai Masaaki, Kurosawa Masashi, Ohta Akio, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 9 )   2017.9

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    DOI: 10.7567/JJAP.56.095701

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  42. Thermodynamic analysis of (0001) and (000(1)over-bar) GaN metalorganic vapor phase epitaxy

    Kusaba Akira, Kangawa Yoshihiro, Kempisty Pawel, Valencia Hubert, Shiraishi Kenji, Kumagai Yoshinao, Kakimoto Koichi, Koukitu Akinori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 7 )   2017.7

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    DOI: 10.7567/JJAP.56.070304

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  43. First principles investigation of SiC/AlGaN(0001) band offset

    Kojima E., Endo K., Shirakawa H., Chokawa K., Araidai M., Ebihara Y., Kanemura T., Onda S., Shiraishi K.

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 758-760   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.11.066

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  44. First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN

    Sekiguchi K., Shirakawa H., Yamamoto Y., Araidai M., Kangawa Y., Kakimoto K., Shiraishi K.

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 950-953   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.044

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  45. Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy

    Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

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    DOI: 10.7567/JJAP.56.04CJ04

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  46. Evaluation of energy band offset of Si 1-xSnx semiconductors by numerical calculation using density functional theory

    Nagae Yuki, Kurosawa Masashi, Araidai Masaaki, Nakatsuka Osamu, Shiraishi Kenji, Zaima Shigeaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

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    DOI: 10.7567/JJAP.56.04CR10

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  47. Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons

    Hattori Ayami, Tanaya Sho, Yada Keiji, Araidai Masaaki, Sato Masatoshi, Hatsugai Yasuhiro, Shiraishi Kenji, Tanaka Yukio

    JOURNAL OF PHYSICS-CONDENSED MATTER   Vol. 29 ( 11 )   2017.3

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    DOI: 10.1088/1361-648X/aa57e0

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  48. DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic Vaporphase epitaxy

    Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano

    Appl. Phys.Lett.   ( 111 ) page: 141602   2017

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  49. Defect Formation in SiO2 Formed by Thermal Oxidation of SiC

    Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji

    2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)     page: 242-243   2017

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  50. First Principles and Themodynamical Studies on Matel Organic Vaper Phase Epitaxy of GaN

    Shiraishi Kenji, Sekiguchi Kazuki, Shirakawa Hiroki, Chokawa Kenta, Araidai Masaaki, Kangawa Yoshihiro, Kakimoto Koichi

    SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR   Vol. 80 ( 1 ) page: 295-301   2017

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    DOI: 10.1149/08001.0295ecst

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  51. Silicon Emission Mechanism for Oxidation Process of Non-Planar Silocon

    H.Kagechima, K.Shiraishi, T.Endoh

    ECS Transactions   Vol. 75 ( 5 ) page: 216-226   2016

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  52. Shape effects of GeSbTe nanodots on the near-field interaction with a silver triangle antenna Reviewed

    N Kojima, N Ota, K Asakawa, K Shiraishi, K Yamada

    Japanese Journal of Applied Physics   Vol. 54(4)   page: 025009   2015

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  53. First-principles calculations for initial oxidation processes of SiC surfaces: Effect of crystalline surface orientations Reviewed

    A Ito, T Akiyama, K Nakamura, T Ito, H Kageshima, M Uematsu, and Kenji Shiraishi

    Japanese Journal of Applied Physics   Vol. 54(10)   page: 101301   2015

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  54. First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence Reviewed

    T Akiyama, A Ito, K Nakamura, T Ito, H Kageshima, M Uematsu, and Kenji Shiraishi

    Surface Science   Vol. 641   page: 174-179   2015

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  55. Asymmetric Behavior of Current-induced magnetization swyching in a magnetic tunnel juction: Non-equilibrium first-principles Calculations Reviewed

    Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraisi

    Applied Physics Express   ( 7 ) page: 045202.1-3   2014.3

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  56. A QM/MM study of nitric oxide reductase-catalysed N2O formation Reviewed

    M. Shoji, K, Hanaoka, D. Kondo, A. Sato, H, Umeda, K. Kamiya, K. Shiraishi

    Molecular Physics: An International Journal at the Interface Between Chemistry and Physics   ( 112 ) page: 393-397   2014.2

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  57. A QM/MM study of nitric oxide reductase-catalysed N2O formation Reviewed

    M. Shoji, K, Hanaoka, D. Kondo, A. Sato, H, Umeda, K. Kamiya, K. Shiraishi

    International Journal of Quantum Chemistry,   ( 112 ) page: 393-397   2014.1

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  58. Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure Reviewed

    Y. Sakurai, K. Kakushima, K. Ohmori, K. Yamada, H. Iwai, K. Shiraishi, S. Nomura

    Optics Express   ( 22 ) page: 1997-2006   2014.1

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  59. Asymmetric behavior of current-induced magnetization switching in a magnetic tunnel junction: Non-equilibrium first-principles calculations Reviewed

    38. Masaaki Araidai, Takahiro Yamamoto, Kenji Shiraishi,

    Appl. Phys. Exp.   ( 7 ) page: 045202-045204   2014

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  60. Role of nitrogen incorporation into Al2O3-based resistive random-access memory Reviewed

    40. Moon Young Yang, Katsumasa Kamiya, Hiroki Shirakawa, Blanka Magyari-Köpe, Yoshio Nishi, Kenji Shiraishi

    Appl. Phys. Exp.   ( 7 ) page: 074202-074205   2014

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  61. GeTe sequences in superlattice phase change memories and their electrical characteristics Reviewed

    39. T. Ohyanagi, M. Kitamura, M. Araidai, S. Kato, N. Takaura, K. Shiraishi,

    Appl. Phys. Lett.   ( 104 ) page: 252106-252108   2014

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  62. Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach Reviewed

    Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama

    Materials   ( 6 ) page: 3309-3360   2013.12

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  63. Nanoscale (-10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode Reviewed

    E. Cha, J. Woo, D. Lee, S. Lee, J. Song, Y. Koo, J. Lee, C. G. Park. M. Y. Yang, K. Kamiya, K. Shiraishi, B. Magyari-Köpe, Y. Nishi, H, Hwang

    Tech. Digest of 2013 International Electron Devices Meeting     page: P10.5.1-P10.5.4   2013.12

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  64. Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations Reviewed

    T. Ohyanagi, N. Takaura, M. Tai, K. Kitamura, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi

    Tech. Digest of 2013 International Electron Devices Meeting     page: P.30.5.1-P.30.5.4   2013.12

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  65. Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching Reviewed

    K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi

    IEEE Transactions on Electron Devices   ( 60 ) page: 3400-3406   2013.11

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  66. Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories Reviewed

    M. Y. Yang, K. Kamiya, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi

    Appl. Phys. Lett.   ( 103 ) page: 93504   2013.10

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  67. Interstitial oxygen induced Fermi level pinning in the Al2O3-based high-k MISFET with heavy-doped n-type poly-Si gates Reviewed

    M. Y. Yang, K. Kamiya, K. Shiraishi

    AIP Advances   ( 3 ) page: 102113   2013.10

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  68. Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories Reviewed

    K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi, K. Shiraishi,

    ECS Trans. 58     page: 181-188   2013.10

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  69. Generalized Mechanism of the Resistance Switching in Binary-Oxide=Based Resistive Random-Access Memories Reviewed

    Katsumasa Kamiy, Moon Young Yang, Takahiro Nagata, Seong-Geon Park, Blanka Magyari-Köpe, Toyohiro Chikyow,Keisaku Yamada, Masaaki NIwa, Yoshio Nishi,Kenji Shiraisi

    Physical Review B   ( 87 ) page: 155201   2013.8

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  70. Energetics and electron states of Au/Ag incorporated into crystalline/amorphous silicon Reviewed

    M. Y. Yang, K. Kamiya, T. Yamauchi, T. Nakayama, K. Shiraishi

    J. Appl. Phys.   ( 114 ) page: 63701   2013.8

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  71. Effect of Coulomb interaction on multi-electronwave packet dynamics Reviewed

    T. Shiokawa, Y. Takada, S. Konabe, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi

    AIP Conf. Proc.   ( 1566 ) page: 421-422   2013.8

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  72. Physical origins of ON-OFF switching in ReRAM via VO based conducting channels Reviewed

    K. Kamiya, M. Y. Yang, S-G. Park, B. Magyari-Köpe, Y. Nishi, M. Niwa, K. Shiraishi

    AIP Conf. Proc.   ( 1566 ) page: 11-12   2013.8

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  73. Substrate-mediated proton relay mechanism for the religation reaction in topoisomerase II Reviewed

    K. Hanaoka, M. Shoji, D. Kondo, A. Sato, M. Y. Yang, K. Kamiya, K. Shiraishi

    Journal of Biomolecular Structure and Dynamics   ( 31 ) page: 1-7   2013.7

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  74. Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications Reviewed

    N. Takaura, T. Ohyanagi, M. Kitamura, M. Tai, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, K. Shiraishi,

    Tech. Digest of 2013 Symposium on VLSI Tech.     page: T130-T131   2013.6

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  75. Dynamical Study of Multi-Election Wave Packet in Nanoscale Structure Reviewed

    Kenji Shiraisi, Taro Shiokawa, Genki Fujita

    Jpn. J. Appl. Phys   ( 52 ) page: 04CJ06   2013.4

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  76. Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3 Insertion Layer

    M. Y. Yang, K. Kamiya, B. Magyari-Köpe, H. Momida, T. Ohno, M. Niwa, Y. Nishi, K. Shiraishi

    Jpn. J. Appl. Phys   ( 52 ) page: 04CD11   2013.4

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  77. On the important role of the anti-Jahn-Teller effect in underdoped cuprate superconductors Reviewed

    H. Kamimura, S. Matsuno, T. Mizokawa, K. Sasaoka, K. Shiraishi, H. Ushio

    J. Phys.: Conf. Ser.   ( 429 ) page: 12043   2013.4

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  78. Interacting Electron Wave Packet Dynamics in a Two-Dimensional Nanochannel Reviewed

    C. M. Puetter, S. Konabe, Y. Hatsugai, K. Ohmori, K. Shiraishi

    Appl. Phys. Exp.   ( 6 ) page: 65201   2013.4

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  79. Calculation of the electron transfer coupling matrix element in diabatic reactions Reviewed

    M. Shoji, K. Hanaoka, A. Sato, Daiki Kondo, M. Y. Yang, K. Kamiya, K. Shiraishi,

    International Journal of Quantum Chemistry   ( 13 ) page: 342-347   2013

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  80. Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H-SiC MOSFET Reviewed

    S. Onda, H. Watanabe, Y. Kito, H. Kondo, H. Uehigashi, N. Hosokawa, Y. Hisada, K. Shiraishi, H. Saka

    Phil. Mag. Lett.   ( 93 ) page: 439-447   2013

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  81. The dissociation modes of threading screw dislocations in 4H-SiC Reviewed

    S. Onda, H. Watanabe, Y. Kito, H. Kondo, H. Uehigashi, Y. Hisada, K. Shiraishi, H. Saka

    Phil. Mag. Lett.   ( 93 ) page: 591-600   2013

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  82. A New-Type of Defect Generation at a 4H-SiC/SiO2 interface by Oxidation Induced Compressive Strain Reviewed

    20. Kenta Chokawa, Shigenori Kato, Katsumasa Kamiya, Kenji Shiraishi,

    Materials Science Forum,     page: 740-742, 469-472   2013

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  83. Origins of Negative Fixed Charge in Wet Oxidation for SiC Reviewed

    19. Katsumasa Kamiya, Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato, Kenji Shiraishi,

    Materials Science Forum     page: 740-742, 409-412   2013

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  84. Evaluation of Growth and Cleaning Rates of Chamber-Wall Deposition during Silicon Gate Etching Reviewed

    18. J. Tanaka K. Shiraishi

    e-Journal of Surface Science and Nanotechnology,   ( 11 ) page: 1-7   2013

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  85. Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule Reviewed

    Y. Takagi, K. Shiraishi, M. Kasu H. Sato,

    Surface Science,     page: 203?206   2013

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  86. Theoretical Study of N incorporation Effect during SiC Oxidation Reviewed

    21. Shigenori Kato, Kenta Chokawa, Katsumasa Kamiya, Kenji Shiraishi,

    Materials Science Forum,     page: 740-742, 455-458   2013

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  87. Intrinsic origin of the breakdown of quasi-cubic approximation in nitride semiconductors Reviewed

    5. Y. Ebihara, K. Kamiya, K. Shiraishi . A. Yamaguchi,

    physica status solidi (c)   ( 8 ) page: 2279-2281   2012

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  88. Theoretical study of Si-based ionic switch Reviewed

    15. Takashi Yamauchi, Moon Young Yang, Katsumasa Kamiya, Kenji Shiraishi, Takashi Nakayama,

    Applied Physics Letters   ( 100 ) page: 203506-203509   2012

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  89. Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide Reviewed

    14. Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato, Katsumasa Kamiya, Kenji Shiraishi,

    Applied Physics Letters   ( 100 ) page: 212110-212112   2012

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  90. Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics Reviewed

    13. M. Arikawa, M. Muraguchi, Y. Hatsugai, K. Shiraishi, T. Endoh,

    ,Jpn. J. Appl. Phys. 51, Art.     page: 02BM03   2012

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  91. Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice Reviewed

    12. K. Kamiya, Y. Ebihara, M. Kasu, K. Shiraishi,

    Jpn. J. Appl. Phys. 51, Art.     page: 02BJ11   2012

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  92. Multi-Electron Wave Packet Dynamics in Applied Electric Field Reviewed

    11. Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi,

    Jpn. J. Appl. Phys. 51, Art.     page: 02BJ01   2012

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  93. ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels Reviewed

    10. K. Kamiya, M. Y. Yang, S.-G. Park,B. Magyari-Köpe,Y. Nishi, M. Niwa, K. Shiraishi

    Appl. Phys. Lett. 100, Art.     page: 073502   2012

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  94. Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material Reviewed

    N. Umezawa K. Shiraishi,,

    Appl. Phys. Lett. 100, Art.     page: 092904   2012

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  95. Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics Reviewed

    8. M. Arikawa, M. Muraguchi, Y. Hatsugai, K. Shiraishi, T. Endoh,

    Jpn. J. Appl. Phys. 51, Art.     page: 02BM03   2012

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  96. Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice Reviewed

    7. K. Kamiya, Y. Ebihara, M. Kasu, K. Shiraishi,

    Jpn. J. Appl. Phys. 51, Art.     page: 02BJ11   2012

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  97. Multi-Electron Wave Packet Dynamics in Applied Electric Field Reviewed

    6. Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi,

    Jpn. J. Appl. Phys. 51, Art.     page: 02BJ01   2012

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  98. Physics in Designing Desirable ReRAM Stack Structure -Atomistic Recipes Based on Oxygen Chemical Potential Control and Charge Injection/Removal

    4. Katsumasa Kamiya, Moon Young Yang, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi,

    Technical Digest of 2012 International Electron Devices Meeting,     page: 478-481   2012

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  99. Atomistic Design of Guiding Principles for High Quality Metal-Oxide-Nitride-Oxide-Semiconductor Memories:First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers Reviewed

    1. K. Yamguchi, A. Otake, K. Kamiya, Y. Shigeta, K. Shiraishi,

    Jpn. J. Appl. Phys. 50 Art.     page: 04DD05   2011

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  100. Calculation of the Electron Transfer Coupling Matrix Element in Diabatic Reactions Reviewed

    16. Mitsuo Shoji, Kyohei Hanaoka, Akimasa Sato, Daiki Kondo, Moon Young Yang, Katsumasa Kamiya, Kenji Shiraishi,

    International Journal of Quantum Chemistry, DOI: 10.1002/qua.     page: 24074   2011

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  101. An atomistic study on hydrogenation effects toward quality improvement of program/erase cycle of MONOS- type memory Reviewed

    4. Akira Otake, Keita Yamaguchi, Katsumasa Kamiya, Yasuteru Shigeta, Kenji Shiraishi,

    IEICE Transactions   ( E94-C ) page: 693-698   2011

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  102. Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency Reviewed

    3. K. Kamiya, Y. Ebihara, K. Shiraishi, M. Kasu,

    Appl. Phys. Lett. 99, Art.     page: 151108   2011

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  103. Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell Reviewed

    2. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh,

    Jpn. J. Appl. Phys. 50 Art.     page: 04DD04   2011

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  104. Guiding Principle of Highly Scalable MONOS-Type Memory

    1. K. Shiraishi, K. Yamaguchi, K. Kamiya, A. Otake, Y. Shigeta,

    ESC Transaction,   ( 41-7 ) page: 71-78   2011

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  105. First Principle Study of the Stability of H Atoms in SiN Layers on MONOS-Type Memories During Program/Erase Operations

    3. K. Yamaguchi, A. Otake, K. Kamiya, Y. Shigeta, K. Shiraishi,

    Proceeding of 2011 International Conference on Simulation of Semiconductor Processes and Devices     page: 215-217   2011

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  106. Fundamental origin of excellent low-noise property in 3D Si-MOSFETs -Impact of charge-centroid in the channel due to quantum effect on 1/f noise-

    2. W. Feng, R. Hettiarachchi, Y. Lee, S. Sato, K. Kakushima, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, K. Shiraishi, H. Iwai, K. Ohmori,

    2011 Technical Digest of 2011 International Electron Devices Meetings   ( 27 ) page: 7-1-4   2011

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Presentations 15

  1. Effect of Electric Field in Multi-Electron Wave Packet Dynamics in Channel of Nanoscale devices International conference

    G.Fujita, T.shiokawa, Y.Takeda, S.Konabe, M.Muraguchi, T.Yamamoto, T.Endo, Y.Hatsugai, K.Shiraishi

    ISANN 2013 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  2. SiC酸化により引き起こされるSi欠陥への第一原理計算からの考察

    長川健太、神谷克政、洗平昌晃、白石賢二

    先進パワー半導体研究会 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:埼玉会館   Country:Japan  

  3. Multi-Electron Wave Packets Dynamics under MOSFET-like Potentials International conference

    T.Shiokawa, G.Fujita, Y.Takeda, S.Konabe, M.Muraguchi, T.Yamamoto, T.Endo, Y.Hatsugai, K.Shiraishi

    ISANN 2013 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  4. Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories International conference

    K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi and K. Shiraishi

    224th Meeting of Electrochemical Society 

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    Event date: 2013.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  5. 4H-Sicの熱酸化速度の理論的研究-Si面とC面の酸化速度の相違-

    丸山翔太郎、遠藤賢太郎、長川健太、神谷克政、白石賢二

    応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学   Country:Japan  

  6. Intrinsic SiC Oxidation Problems Obtained by First Principle Calculations International conference

    K. Shiraishi, K. Chokawa and K. Kamiya

    International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013) 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  7. Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM) International conference

    K. Shiraishi, M.Y. Yang, S.Kato, M. Araidai, K. Kamiya, T. Yamamoto, T. Ohyanagi, N. Takaura, M. Niwa, B. Magyari-Kope, and Y. Nishi

    2013 International Conference on Solid State Devices and Materials 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  8. 超格子材料を用いた低電力動作相変化デバイス

    森川貴博、大柳孝純、木下勝治、田井光春、秋田憲一、高浦則克、加藤重徳、洗平昌晃、神谷克政、山本貴博、白石賢二

    応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学   Country:Japan  

  9. 4H-Sic表面のNO初期酸化過程の理論的検討

    遠藤賢太郎、丸山翔太郎、加藤重徳、神谷克政、白石賢二

    応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学   Country:Japan  

  10. First principles material design toward nano-scale memory functional devices triggered by carrier injection International conference

    Kenji Shiraishi

    BIT's 2nd Annual World Congress of Advanced Materials-2013 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  11. First Principles Guiding Principles for the Switching Process in Oxide ReRAM International conference

    3. Kenji Shiraishi, Moon Young Yang, Katsumasa Kamiya, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi,

    2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology 

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    Event date: 2012.10.29 - 2012.11.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:China  

  12. On-Off Switching Mechanism of Oxide Based ReRAM by Ab Initio Electronic Structure Calculations International conference

    Kenji Shiraishi, Moon Young Yang, Katsumasa Kamiya, Hiroyoshi Momida, Blanka Magyari-Köpe, Takahisa Ohno, Masaaki Niwa, Yoshio Nishi

    2nd International Workshop on Resistive RAM, 

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    Event date: 2012.10.8 - 2012.10.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  13. Computational Study toward Micro Electronics Engineering International conference

    5. Kenji Shiraishi, Keita Yamaguchi, Moon Young Yang, Seong-Geon Park, Katsumasa Kamiya, Yasuteru Shigeta, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi

    2012 28th International Conference on Microelectronics, 

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    Event date: 2012.5.13 - 2012.5.16

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Serbia  

  14. Computational Science Studies toward Future Nano-Devices International conference

    K. Shiraishi

    WIMNACT Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology 

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    Event date: 2012

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  15. Guiding Principle of Highly Scalable MONOS-Type Memory International conference

    1. K. Shiraishi, K. Yamaguchi, K. Kamiya, A. Otake, Y. Shigeta,

    220th Electrochemical Society Meeting, 

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    Event date: 2011.10.9 - 2011.10.14

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

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KAKENHI (Grants-in-Aid for Scientific Research) 1

  1. Synthesis of New Group IV Two Dimensional Materials

    Grant number:15H03564  2015.04 - 2018.03

    Shiraishi Kenji

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    Authorship:Principal investigator 

    Grant amount:\17420000 ( Direct Cost: \13400000 、 Indirect Cost:\4020000 )

    We performed first principles calculations of of silicene and germanene and clarified the atomic and electronic structures. First, we performed electronic structure of silicene and germanene on Al2O3 insulators. As a result, band structures of silicene and germanene keep dirac cone characteristic at K point even after it is adsorbed on Al2O3. However, band structures are slightly modified dependeng of the adsorbed structures of silicene and gemanene.