Updated on 2024/11/25

写真a

 
USAMI Noritaka
 
Organization
Graduate School of Engineering Materials Process Engineering 2 Professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Materials Science and Engineering
Title
Professor
Contact information
メールアドレス

Degree 1

  1. Doctor (Engineering) ( 1998.1   The University of Tokyo ) 

Research Interests 4

  1. crystal growth

  2. multicrystalline informatics

  3. defect engineering

  4. solar cell

Research Areas 3

  1. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  2. Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  3. Nanotechnology/Materials / Crystal engineering

Current Research Project and SDGs 4

  1. 多結晶材料情報学の学理構築と高品質多結晶材料創製

  2. 脱炭素社会の早期実現に向けた次世代太陽電池に関する研究

  3. 非真空プロセスによるシリコン系多元混晶材料のエピタキシャル成長

  4. 量子計算機用高品質半導体基板創製に関する研究

Research History 10

  1. Nagoya University   Professor

    2013.4

  2. Nagoya University   Professor

    2022.4

  3. Cabinet office, Government of Japan   Council for Science, Technology, and Innovation   Senior Science and Technology Policy Fellow

    2018.4 - 2020.3

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    Country:Japan

  4. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics   Professor

    2017.4 - 2027.3

  5. 筑波大学大学院数理物質科学研究科非常勤講師

    2015.10 - 2016.3

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    Country:Japan

  6. Visiting Professor, Institute of Fluid Science, Tohoku University

    2013.5 - 2017.3

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    Country:Japan

  7. Tohoku University   Institute for Materials Research   Associate professor

    2007.4 - 2013.3

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    Country:Japan

  8. Tohoku University   Institute for Materials Research   Associate Professor

    2000.2 - 2007.3

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    Country:Japan

  9. Technical University of Dresden   Institute for Applied Photophysics   Visiting Researcher

    1998.3 - 1999.1

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    Country:Germany

  10. The University of Tokyo   Research Center for Advanced Science and Technology   Assistant

    1994.7 - 2000.1

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    Country:Japan

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Education 3

  1. The University of Tokyo   Graduate School, Division of Engineering

    1993.4 - 1994.7

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    Country: Japan

  2. The University of Tokyo   Graduate School, Division of Engineering

    1991.4 - 1993.3

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    Country: Japan

  3. The University of Tokyo   Faculty of Engineering

    1987.4 - 1991.3

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    Country: Japan

Professional Memberships 6

  1. The Japan Photovoltaic Society   Director, Former President

    2020.10

  2. The Japan Society of Applied Physics   Director

    1991.3

  3. The Japan Institute of Metals and Materials

  4. The Japan Association of Crystal Growth

  5. 日本MRS水素科学技術連携研究会

  6. Material Research Society

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Committee Memberships 30

  1. 11th International Workshop on Modeling in Crystal Growth   Member of the international advisory committee  

    2023.12   

  2. 半導体の結晶成長と加工および評価に関する産学連携委員会   委員  

    2023.4   

  3. The 35th International Photovoltaic Science and Engineering Conference   プログラム副委員長  

    2023.4 - 2025.3   

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    Committee type:Other

  4. 新潟大学カーボンニュートラル融合技術研究センター   運営委員  

    2022.10   

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    Committee type:Other

  5. 10th International Workshop on Modeling in Crystal Growth   Member of the International Advisory Committee  

    2022.4 - 2023.3   

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    Committee type:Other

  6. 3rd International Symposium on Crytal Growth Processes and Devices   Member of Scientific Advisory Committee  

    2022.4 - 2023.3   

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    Committee type:Academic society

  7. Indo-Japan Joint Workshop on Photovoltaics   Convenor  

    2022.4 - 2023.3   

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    Committee type:Academic society

  8. NIMS次期拠点プロジェクト   外部評価委員  

    2021.10   

  9. APAC Silicide 2022   Program committee member  

    2021.9 - 2023.3   

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    Committee type:Academic society

  10. 宮﨑大学テニュアトラック教員選考評価委員会   委員  

    2021.9   

  11. 日本学術振興会産学協力委員会R032産業イノベーションのための結晶成長委員会   運営委員  

    2021.7   

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    Committee type:Academic society

  12. 9th International Symposium on Control of Semiconductor Interfaces   International Program Committee  

    2021.4 - 2023.3   

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    Committee type:Academic society

  13. 多結晶材料情報学応用技術研究会   座長  

    2021.4 - 2023.3   

  14. 新エネルギー・産業技術総合開発機構   技術委員  

    2021.1 - 2026.3   

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    Committee type:Other

  15. 次世代の太陽光発電シンポジウム   プログラム委員  

    2020.10   

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    Committee type:Academic society

  16. 日本太陽光発電学会次世代セル・モジュール分科会   幹事  

    2020.10   

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    Committee type:Academic society

  17. International Advisory Committee of the International Photovoltaic Science and Engineering Conference   member  

    2020.8   

  18. International Advisory Committee of World Conference on Photovoltaic Energy Conversion   member  

    2020.8   

  19. The 22nd International Vacuum Congress   Chair of sub-program committee, Electronic Materials and Processing  

    2020.4 - 2023.3   

  20. 第8回シリコン材料の先端科学と技術国際シンポジウム   実行委員  

    2020.4 - 2023.3   

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    Committee type:Academic society

  21. The 8th Asian Conference on Crystal Growth and Crystal Technology   Co-Chair of Program and Award Selection Committee  

    2019 - 2021.3   

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    Committee type:Other

  22. The 33rd International Photovoltaic Science and Engineering Conference   General Chair of Organizing Committee  

    2018.12 - 2023.3   

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    Committee type:Other

  23.   Member of the international advisory committee  

    2018.4 - 2022.4   

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    Committee type:Academic society

  24. The 10th International Workshop on Crystalline Silicon for Solar Cells   Co-Chair of the organizing committee  

    2016.4 - 2018.4   

  25. 東北大学金属材料研究所研究部共同利用委員会   委員  

    2016.4 - 2018.3   

  26. 東北大学産学連携先端材料研究開発センター運営評議委員会   委員  

    2015.4 - 2019.3   

  27. 日本学術振興会結晶加工と評価技術第145委員会   幹事  

    2013 - 2023.3   

  28. 日本学術振興会次世代の太陽光発電システム第175委員会   副委員長  

    2009 - 2020.3   

  29. International Advisory Committee of the International Workshop on Crystalline Silicon for Solar Cells   member  

    2006.10   

  30. 日本学術振興会結晶成長の科学と技術第161委員会   幹事長代理  

    2000 - 2021.3   

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Awards 12

  1. PVSEC Award

    2024.11   International Conference on Photovoltaic Science and Engineering  

    Noritaka USAMI

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    Award type:Award from international society, conference, symposium, etc. 

  2. 科学技術分野の文部科学大臣表彰 科学技術賞(研究部門)

    2022.4   文部科学省  

  3. 応用物理学会フェロー

    2021.9   応用物理学会   シリコン系材料の多様な結晶成長とデバイス応用に関する研究

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    Award type:Award from Japanese society, conference, symposium, etc. 

  4. Photo & Illustration Contest 最優秀賞

    2018.9   応用物理学会   Semicondoctor Nanoflower

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  5. SiliconPV Award

    2018.3   SiliconPV 2018   3D Visualization and Analysis of Dislocation Clusters in Multicrystalline Si Ingot by Approach of Data Science

    Y. Hayama, T. Muramatsu, T. Matsumoto, K. Kutsukake, H. Kudo, N. Usami

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    Award type:Award from international society, conference, symposium, etc.  Country:Switzerland

  6. イノベイティブPV論文賞

    2017.7   独立行政法人日本学術振興会   多結晶材料情報学によるスマートシリコンインゴットの創製に向けて

    "宇佐美徳隆、羽山優介、髙橋勲、松本哲也、工藤博章、横井達矢、松永克志、沓掛健太朗、大野裕 "

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  7. The best poster award

    2012.6  

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    Country:United States

  8. The best paper award

    2009.11  

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    Country:Korea, Republic of

  9. インテリジェント・コスモス奨励賞

    2008.8   財団法人インテリジェント・コスモス学術振興財団  

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    Country:Japan

  10. 安藤博記念学術奨励賞

    2000.7   一般財団法人安藤研究所  

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    Country:Japan

  11. Engineering Conference Foundation Fellowship on Silicon Heterostructrues

    1997.9  

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    Country:United States

  12. Young Researcher Award of International Conference on Solid State Devices and Materials

    1993.8  

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    Country:Japan

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Papers 562

  1. Coherence of a field gradient driven singlet-triplet qubit coupled to multielectron spin states in <SUP>28</SUP>Si/SiGe

    Song, Y; Yun, J; Kim, J; Jang, W; Jang, H; Park, J; Cho, MK; Sohn, H; Usami, N; Miyamoto, S; Itoh, KM; Kim, D

    NPJ QUANTUM INFORMATION   Vol. 10 ( 1 )   2024.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41534-024-00869-y

    Web of Science

  2. Exploring mc-Silicon Wafers: Utilizing Machine Learning to Enhance Wafer Quality Through Etching Studies Invited Reviewed International coauthorship

    Madhesh Raji, Sreeja Balakrishnapillai Suseela, Srinivasan Manikkam, Gowthami Anbazhagan, Kentaro Kutsukake, Keerthivasan Thamotharan, Ramadoss Rajavel, Noritaka Usami, Ramasamy Perumalsamy

    Crystal Research and Technology     page: 2300279-1 - 2300279-12   2024.2

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    Language:English   Publishing type:Research paper (scientific journal)  

  3. Core-shell yarn-structured triboelectric nanogenerator for harvesting both waterdrop and biomechanics energies

    Wang, HT; Kurokawa, Y; Zhang, JH; Gotoh, K; Liu, X; Miyamoto, S; Usami, N

    APPLIED PHYSICS EXPRESS   Vol. 17 ( 1 )   2024.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/ad1f06

    Web of Science

  4. Investigating impurities and surface properties in germanium co-doped multi-crystalline silicon: a combined computational and experimental investigation International coauthorship

    Keerthivasan, T; Anbu, G; Srinivasan, M; Kojima, T; Rath, JK; Usami, N; Vijayan, N; Madhesh, R; Balaji, C; Singh, M; Rao, C; Ramasamy, P

    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS   Vol. 35 ( 1 )   2024.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s10854-023-11750-7

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  5. Pioneering Multicrystalline Informatics Invited Reviewed

    Noritaka USAMI

    JSAP Review     2024.1

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    Authorship:Lead author, Last author, Corresponding author   Language:English  

  6. Microstructural, electrical, and optoelectronic properties of BaSi2 epitaxial films grown on Si substrates by close-spaced evaporation Reviewed International journal

    Hara Kosuke O., Takagaki Ryota, Arimoto Keisuke, Usami Noritaka

    JOURNAL OF ALLOYS AND COMPOUNDS   Vol. 966   2023.12

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jallcom.2023.171588

    Web of Science

  7. Free-Standing Electrode and Fixed Surface Tiny Electrode Implemented Triboelectric Nanogenerator with High Instantaneous Current Reviewed International coauthorship

    Haitao Wang, Yasuyoshi Kurokawa, Jia Wang, Wentao Cai, Jia-Han Zhang, Shinya Kato, Noritaka Usami

    Small     page: 2308531-1 - 2308531-9   2023.12

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1002/smll.202308531

  8. Multicrystalline Informatics Applied to Multicrystalline Silicon for Unraveling The Microscopic Root Cause of Dislocation Generation Reviewed

    Kenta Yamakoshi, Yutaka Ohno, Kentaro Kutsukake, Takuto Kojima, Tatsuya Yokoi, Hideto Yoshida, Hiroyuki Tanaka, Xin Liu, Hiroaki Kudo, Noritaka Usami

    Advanced Materials     page: 2308599-1 - 2308599-13   2023.12

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1002/adma.202308599

  9. Hydrogenation of silicon-nanocrystals-embedded silicon oxide passivating contacts Invited Reviewed International journal

    Masashi Matsumi, Kazuhiro Gotoh, Markus Wilde, Yasuyoshi Kurokawa, Katsuyuki Fukutani and Noritaka Usami

    Nanotechnology     2023.11

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1088/1361-6528/ad115d

  10. Nanoscale Size Control of Si Pyramid Texture for Perovskite/Si Tandem Solar Cells Enabling Solution‐Based Perovskite Top‐Cell Fabrication and Improved Si Bottom‐Cell Response Reviewed International journal

    Yuqing Li, Hitoshi Sai, Calum McDonald, Zhihao Xu, Yasuyoshi Kurokawa, Noritaka Usami, Takuya Matsui

    Advanced Materials Interfaces     page: 2300504-1 - 2300504-9   2023.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1002/admi.202300504

  11. Improvement of passivation performance of silicon nanocrystal/silicon oxide compound layer by two-step hydrogen plasma treatment Reviewed International journal

    Masashi Matsumi, Kazuhiro Gotoh, Markus Wilde, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami

    Solar Energy Materials and Solar Cells   Vol. 262   page: 112358-1 - 112358-6   2023.9

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1016/j.solmat.2023.112538

  12. Thermoelectric properties of Mg2Si thin films prepared by thermal evaporation of Mg and face-to-face annealing Reviewed International journal

    Kurokawa Yasuyoshi, Sato Kaisei, Shibata Keisuke, Kato Shinya, Miyamoto Satoru, Gotoh Kazuhiro, Itoh Takashi, Usami Noritaka

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 163   2023.8

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2023.107552

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  13. Quantitative evaluation of implied open-circuit voltage after metal electrode deposition on TiO (x) /Si heterostructures by photoluminescence imaging: impact of metallization on passivation performance Reviewed International journal

    Fukaya Shohei, Gotoh Kazuhiro, Matsui Takuya, Sai Hitoshi, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SK )   2023.8

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/acc813

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  14. Impact of B2H6 plasma treatment on contact resistivity in silicon heterojunction solar cells Reviewed International journal

    Gotoh Kazuhiro, Ozaki Ryo, Morimura Motoo, Tanaka Aki, Iseki Yoshiko, Nakamura Kyotaro, Muramatsu Kazuo, Kurokawa Yasuyoshi, Ohshita Yoshio, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SK )   2023.8

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/acc953

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  15. 3D CNN and grad-CAM based visualization for predicting generation of dislocation clusters in multicrystalline silicon Reviewed International journal

    Kyoka Hara, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, and Noritaka Usami

    APL Machine Learning   Vol. 1   page: 036106-1 - 036106-9   2023.7

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    Authorship:Last author, Corresponding author   Language:English  

    DOI: https://doi.org/10.1063/5.0156044

  16. A machine learning-based prediction of crystal orientations for multicrystalline materials Reviewed International journal

    Kyoka Hara, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, and Noritaka Usami

    APL Machine Learning   Vol. 1   page: 026113-1 - 026113-9   2023.5

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1063/5.0138099

  17. Fabrication of light trapping structures specialized for near-infrared light by nanoimprinting for the application to thin crystalline silicon solar cells Reviewed International journal

    Kimata Yuto, Gotoh Kazuhiro, Miyamoto Satoru, Kato Shinya, Kurokawa Yasuyoshi, Usami Noritaka

    DISCOVER NANO   Vol. 18 ( 1 )   2023.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1186/s11671-023-03840-6

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  18. Preparation and thermoelectric characterization of boron-doped Si nanocrystals/silicon oxide multilayers Reviewed International journal

    Keisuke Shibata, Shinya Kato, Masashi Kurosawa, Kazuhiro Gotoh, Satoru Miyamoto, Noritaka Usami and Yasuyoshi Kurokawa

    Japanese Journal of Applied Physics   Vol. 62 ( SC ) page: SC1074   2023.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/acb779

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  19. Performance enhancement of droplet-based electricity generator using a CYTOP intermediate layer Reviewed International journal

    Haitao Wang, Yasuyoshi Kurokawa, Kazuhiro Gotoh, Shinya Kato, Shigeru Yamada, Takashi Itoh and Noritaka Usami

    Japanese Journal of Applied Physics   Vol. 62 ( SC ) page: SC1032   2023.4

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/acaca7

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  20. The impact on mc-Si ingot grown in a directional solidification furnace by partially replacing the susceptor bottom with an insulation material: A numerical investigation Reviewed International coauthorship International journal

    T. Keerthivasan, Xin Liu, M. Srinivasan, Noritaka Usami, G. Anbu, G. Aravindan, P. Ramasamy

    Journal of Crystal Growth   Vol. 607   page: 127130-1 - 127130-7   2023.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2023.127130

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  21. Bayesian optimization of hydrogen plasma treatment in silicon quantum dot multilayer and application to solar cells Reviewed International journal

    Fuga Kumagai, Kazuhiro Gotoh, Satoru Miyamoto, Shinya Kato, Kentaro Kutsukake, Noritaka Usami and Yasuyoshi Kurokawa

    Discover Nano   Vol. 43   2023.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1186/s11671-023-03821-9

  22. Evaluation of Damage in Crystalline Silicon Substrate Induced by Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Films Reviewed International journal

    H. Kojima, T. Nishihara, K. Gotoh, N. Usami, T. Hara, K. Nakamura, Y. Ohshita, and A. Ogura

    ECS Journal of Solid State Science and Technology   Vol. 12 ( 1 ) page: 015003   2023.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2162-8777/acb4bb

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  23. Influence of post-oxidizing treatment on passivation performance on the spin-coated titanium oxide films on crystalline silicon Reviewed International journal

    Thin Solid Films   Vol. 764   page: 139597   2023.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2022.139597

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  24. Quantitative evaluation of implied open-circuit voltage after metal electrode deposition on TiOx/Si heterostructures by photoluminescence imaging: Impact of metallization on passivation performance Invited Reviewed International journal

    Shohei Fukaya, Kazuhiro Gotoh, Takuya Matsui, Hitoshi Sai, Yasuyoshi Kurokawa, Noritaka Usami

    Japanese Journal of Applied Physics     2023

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  25. Influence of insertion position of a LiF buffer layer on passivation performance of crystalline Si/SiO<i><sub>y</sub></i> /TiO<i><sub>x</sub></i>/Al heterostructures

    Fukaya, S; Gotoh, K; Matsui, T; Sai, H; Kurokawa, Y; Usami, N

    2023 IEEE 50TH PHOTOVOLTAIC SPECIALISTS CONFERENCE, PVSC     2023

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/PVSC48320.2023.10359948

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  26. Evaluation of process damage to crystalline silicon by transparent conductive oxide film deposition

    Kojima, H; Nishihara, T; Ito, Y; Lee, H; Gotoh, K; Usami, N; Hara, T; Nakamura, K; Ohsita, Y; Ogura, A

    2023 IEEE 50TH PHOTOVOLTAIC SPECIALISTS CONFERENCE, PVSC     2023

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/PVSC48320.2023.10359745

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  27. Impurity analysis of the effect of partial replacement of retort with an insulation material on mc-silicon grown in directional solidification furnace: Computational Modeling Reviewed International coauthorship International journal

    T. Keerthivasan, X. Liu, M. Srinivasan, N. Usami, G. Aravindan, P. Ramasamy

    Journal of Crystal Growth   Vol. 599   page: 126892   2022.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2022.126892

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  28. Analysis of grain growth behavior of multicrystalline Mg2Si Reviewed International journal

    Deshimaru Takumi, Yamakoshi Kenta, Kutsukake Kentaro, Kojima Takuto, Umehara Tsubasa, Udono Haruhiko, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SD )   2022.11

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/aca032

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  29. Nanopyramid Texture Formation by One-Step Ag-Assisted Solution Process for High-Efficiency Monocrystalline Si Solar Cells Reviewed International journal

    Li Yuqing, Sai Hitoshi, Matsui Takuya, Xu Zhihao, Nguyen Van Hoang, Kurokawa Yasuyoshi, Usami Noritaka

    SOLAR RRL   Vol. 6 ( 11 )   2022.9

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/solr.202200707

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  30. Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate Reviewed International journal

    Keisuke Fukuda, Satoru Miyamoto, Masahiro Nakahara, Shota Suzuki, Marwan Dhamrin, Kensaku Maeda, Kozo Fujiwara, Yukiharu Uraoka and Noritaka Usami

    Scientific Reports   Vol. 12 ( 1 )   2022.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-022-19122-7

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  31. Study on electrical activity of grain boundaries in silicon through systematic control of structural parameters and characterization using a pretrained machine learning model Reviewed International journal

    Fukuda Yusuke, Kutsukake Kentaro, Kojima Takuto, Ohno Yutaka, Usami Noritaka

    JOURNAL OF APPLIED PHYSICS   Vol. 132 ( 2 )   2022.7

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0086193

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  32. Estimation of Crystal Orientation of Grains on Polycrystalline Silicon Substrate by Recurrent Neural Network Reviewed International journal

    Kato Hikaru, Kamibeppu Soichiro, Kojima Takuto, Matsumoto Tetsuya, Kudo Hiroaki, Takeuchi Yoshinori, Kutsukake Kentaro, Usami Noritaka

    IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING   Vol. 17 ( 11 ) page: 1685 - 1687   2022.7

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    DOI: 10.1002/tee.23676

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  33. Fabrication of BaSi2 homojunction diodes on Nb-doped TiO2 coated glass substrates by aluminum-induced crystallization and two-step evaporation method Reviewed International journal

    Kurokawa Yasuyoshi, Yoshino Takamasa, Gotoh Kazuhiro, Miyamoto Satoru, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SC )   2022.5

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    DOI: 10.35848/1347-4065/ac4077

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  34. Improved conversion efficiency of p-type BaSi2/n-type crystalline Si heterojunction solar cells by a low growth rate deposition of BaSi2 Invited Reviewed International journal

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    AIP ADVANCES   Vol. 12 ( 4 )   2022.4

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    DOI: 10.1063/5.0083812

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  35. Zn1-xGexOy Passivating Interlayers for BaSi2 Thin-Film Solar Cells Reviewed

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    ACS APPLIED MATERIALS & INTERFACES   Vol. 14 ( 11 ) page: 13828 - 13835   2022.3

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    DOI: 10.1021/acsami.1c23070

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  36. Effects of grain boundary structure and shape of the solid-liquid interface on the growth direction of the grain boundaries in multicrystalline silicon Reviewed International journal

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    CRYSTENGCOMM   Vol. 24 ( 10 ) page: 1948 - 1954   2022.3

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    DOI: 10.1039/d1ce01573g

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  37. Data-Driven Optimization and Experimental Validation for the Lab-Scale Mono-Like Silicon Ingot Growth by Directional Solidification Reviewed International journal

    Xin Liu, Yifan Dang, Hiroyuki Tanaka, Yusuke Fukuda, Kentaro Kutsukake, Takuto Kojima, Toru Ujihara, and Noritaka Usami

    ACS Omega   Vol. 7 ( 8 ) page: 6665 - 6673   2022.3

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    DOI: 10.1021/acsomega.1c06018

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  38. Silicon Nanocrystals Embedded in Nanolayered Silicon Oxide for Crystalline Silicon Solar Cells Reviewed International journal

    Tsubata Ryohei, Gotoh Kazuhiro, Matsumi Masashi, Wilde Markus, Inoue Tetsuya, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

    ACS APPLIED NANO MATERIALS   Vol. 5 ( 2 )   2022.2

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    DOI: 10.1021/acsanm.1c03355

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  39. Zn1-x Gex Oy Passivating Interlayers for BaSi2 Thin-Film Solar Cells Reviewed International journal

    Yudai Yamashita, Kaori Takayanagi, Kazuhiro Gotoh, Kaoru Toko, Noritaka Usami, and Takashi Suemasu

    ACS Appl. Mater. Interfaces     2022.2

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  40. Fabrication of BaSi2 homojunction diodes on Nb-doped TiO2 coated glass substrates by aluminum-induced crystallization and two-step evaporation method Reviewed International journal

    Japanese Journal of Applied Physics     2022.2

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  41. Effects of grain boundary structure and shape of the solid–liquid interface on the growth direction of the grain boundaries in multicrystalline silicon Reviewed International journal

    Yusuke Fukuda, Kentaro Kutsukake, Takuto Kojima, Noritaka Usami

    CrystEngComm     2022.2

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    DOI: doi.org/10.1039/d1ce01573g

  42. Silicon Nanocrystals Embedded in Nanolayered Silicon Oxide for Crystalline Silicon Solar Cells Reviewed International journal

    ACS Appl. Nano Mater.   Vol. 5 ( 2 ) page: 1820 - 187   2022.1

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    DOI: doi.org/10.1021/acsanm.1c03355

  43. Fractal dimension analogous scale-invariant derivative of Hirsch's index Reviewed International journal

    Fujita Yuji, Usami Noritaka

    APPLIED NETWORK SCIENCE   Vol. 7 ( 1 )   2022.1

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    DOI: 10.1007/s41109-021-00443-x

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  44. Fine Line Screen-Printing Aluminum for Front side p(+) Metallization of High Efficiency Solar Cells Reviewed International coauthorship International journal

    Tsuji Kosuke, Suzuki Shota, Dhamrin Marwan, Adrian Adrian, Buck Thomas, Usami Noritaka

    11TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2021)   Vol. 2487   2022

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    DOI: 10.1063/5.0089217

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  45. Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces Reviewed International journal

    Gotoh Kazuhiro, Wilde Markus, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

    APPLIED SURFACE SCIENCE   Vol. 567   2021.11

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    DOI: 10.1016/j.apsusc.2021.150799

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  46. Fabrication of heterojunction crystalline Si solar cells with BaSi2 thin films prepared by a two-step evaporation method Reviewed International journal

    Nakagawa Yoshihiko, Takahashi Kazuma, Fujiwara Michinobu, Hara Kosuke O., Gotoh Kazuhiro, Kurokawa Yasuyoshi, Itoh Takashi, Suemasu Takashi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 10 )   2021.10

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    DOI: 10.35848/1347-4065/ac23ec

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  47. Improved Performance of Titanium Oxide/Silicon Oxide Electron-Selective Contacts by Implementation of Magnesium Interlayers International journal

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    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 218 ( 19 )   2021.10

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    DOI: 10.1002/pssa.202100296

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  48. Bayesian Optimization of Passivating Contacts for Crystalline Silicon Solar Cells Invited Reviewed International journal

    ECS Meeting Abstracts     2021.10

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    DOI: doi.org/10.1149/MA2021-0213641mtgabs

  49. Contact control of Al/Si interface of Si solar cells by local contact opening method Reviewed International coauthorship International journal

    Tsuji Kosuke, Suzuki Shota, Morishita Naoya, Kuroki Takashi, Nakahara Masahiro, Dhamrin Marwan, Adrian Adrian, Peng Zih-Wei, Buck Thomas, Usami Noritaka

    MATERIALS CHEMISTRY AND PHYSICS   Vol. 270   2021.9

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    DOI: 10.1016/j.matchemphys.2021.124833

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  50. Application of Bayesian optimization for high-performance TiOx/SiOy/c-Si passivating contact Reviewed International journal

    Miyagawa Shinsuke, Gotoh Kazuhiro, Kutsukake Kentaro, Kurokawa Yasuyoshi, Usami Noritaka

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   Vol. 230   2021.9

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    DOI: 10.1016/j.solmat.2021.111251

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  51. Fabrication of Silicon Nanowire Metal-Oxide-Semiconductor Capacitors with Al2O3/TiO2/Al2O3 Stacked Dielectric Films for the Application to Energy Storage Devices Reviewed International journal

    Nezasa Ryota, Gotoh Kazuhiro, Kato Shinya, Miyamoto Satoru, Usami Noritaka, Kurokawa Yasuyoshi

    ENERGIES   Vol. 14 ( 15 )   2021.8

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    DOI: 10.3390/en14154538

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  52. Direct prediction of electrical properties of grain boundaries from photoluminescence profiles using machine learning Reviewed International journal

    Kutsukake Kentaro, Mitamura Kazuki, Usami Noritaka, Kojima Takuto

    APPLIED PHYSICS LETTERS   Vol. 119 ( 3 )   2021.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0049847

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  53. Occurrence Prediction of Dislocation Regions in Photoluminescence Image of Multicrystalline Silicon Wafers Using Transfer Learning of Convolutional Neural Network Reviewed International journal

    Kudo Hiroaki, Matsumoto Tetsuya, Kutsukake Kentaro, Usami Noritaka

    IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES   Vol. E104A ( 6 ) page: 857 - 865   2021.6

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    DOI: 10.1587/transfun.2020IMP0010

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  54. Passivation mechanism of the high-performance titanium oxide carrier-selective contacts on crystalline silicon studied by spectroscopic ellipsometry Reviewed International journal

    Gotoh Kazuhiro, Miura Hiroyuki, Shimizu Ayako, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

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    DOI: 10.35848/1347-4065/abd6dd

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  55. Mechanisms of carrier lifetime enhancement and conductivity-type switching on hydrogen-incorporated arsenic-doped BaSi2 Reviewed International journal

    Aonuki Sho, Xu Zhihao, Yamashita Yudai, Gotoh Kazuhiro, Toko Kaoru, Usami Noritaka, Filonov Andrew B., Nikitsiuk Siarhei A., Migas Dmitri B., Shohonov Denis A., Suemasu Takashi

    THIN SOLID FILMS   Vol. 724   2021.4

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    DOI: 10.1016/j.tsf.2021.138629

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  56. Versatile fabrication of a passivation material, solute PEDOT:PSS, for a c-Si substrate using alcoholic solvents Reviewed International coauthorship International journal

    Nguyen Van Hoang, Hoang Tuan K. A., Kurokawa Yasuyoshi, Usami Noritaka

    SUSTAINABLE ENERGY & FUELS   Vol. 5 ( 3 ) page: 666 - 670   2021.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/d0se01700k

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  57. Application of Bayesian optimization for improved passivation performance in TiOx/SiOy/c-Si heterostructure by hydrogen plasma treatment Reviewed International journal

    Miyagawa Shinsuke, Gotoh Kazuhiro, Kutsukake Kentaro, Kurokawa Yasuyoshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 2 )   2021.2

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    DOI: 10.35848/1882-0786/abd869

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  58. Simulation study on lateral minority carrier transport in the surface inversion layer of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell Reviewed International journal

    Kamioka Takefumi, Hayashi Yutaka, Gotoh Kazuhiro, Hara Tomohiko, Ozaki Ryo, Morimura Motoo, Shimizu Ayako, Nakamura Kyotaro, Usami Noritaka, Ogura Atsushi, Ohshita Yoshio

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 2 )   2021.2

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    DOI: 10.35848/1347-4065/abdd02

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  59. Propagation of Crystal Defects during Directional Solidification of Silicon via Induction of Functional Defects International coauthorship International journal

    Patricia Krenckel , Yusuke Hayama, Florian Schindler, Theresa Trötschler, Stephan Riepe and Noritaka Usami

    Crystals   Vol. 11 ( 2 ) page: 1 - 10   2021.2

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    DOI: 10.3390/cryst11020090

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  60. Origin of recombination activity of non-coherent sigma 3{111} grain boundaries with a positive deviation in the tilt angle in cast-grown silicon ingots Reviewed International journal

    Ohno Yutaka, Tamaoka Takehiro, Yoshida Hideto, Shimizu Yasuo, Kutsukake Kentaro, Nagai Yasuyoshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 1 ) page: .   2021.1

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  61. Activation energy of hydrogen desorption from high-performance titanium oxide carrier-selective contacts with silicon oxide interlayers Reviewed International journal

    Gotoh Kazuhiro, Mochizuki Takeya, Hojo Tomohiko, Shibayama Yuki, Kurokawa Yasuyoshi, Akiyama Eiji, Usami Noritaka

    CURRENT APPLIED PHYSICS   Vol. 21   page: 36 - 42   2021.1

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    DOI: 10.1016/j.cap.2020.10.002

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  62. Realization of the Crystalline Silicon Solar Cell Using Nanocrystalline Transport Path in Ultra-thin Dielectrics for Reinforced Passivating Contact

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    2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 908 - 911   2021

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    DOI: 10.1109/PVSC43889.2021.9519096

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  63. The impact of highly excessive PbI2 on the correlation of MAPbI(3) perovskite morphology and carrier lifetimes Reviewed International coauthorship International journal

    Van Hoang Nguyen, Hoang Tuan K. A., Kurokawa Yasuyoshi, Usami Noritaka

    JOURNAL OF MATERIALS CHEMISTRY C   Vol. 8 ( 41 ) page: 14481 - 14489   2020.11

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    DOI: 10.1039/d0tc04071a

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  64. Generation of dislocation clusters at triple junctions of random angle grain boundaries during cast growth of silicon ingots Reviewed International journal

    Ohno Yutaka, Tajima Kazuya, Kutsukake Kentaro, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 10 )   2020.10

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    DOI: 10.35848/1882-0786/abbb1c

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  65. Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation Reviewed International journal

    Mitamura Kazuki, Kutsukake Kentaro, Kojima Takuto, Usami Noritaka

    JOURNAL OF APPLIED PHYSICS   Vol. 128 ( 12 )   2020.9

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    DOI: 10.1063/5.0017823

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  66. Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask Reviewed International coauthorship International journal

    Nguyen V. H., Novikov A., Shaleev M., Yurasov D., Semma M., Gotoh K., Kurokawa Y., Usami N.

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 114   2020.8

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    DOI: 10.1016/j.mssp.2020.105065

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  67. Reactive deposition growth of highly (001)-oriented BaSi2 films by close-spaced evaporation Reviewed International journal

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    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 113   2020.7

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    DOI: 10.1016/j.mssp.2020.105044

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  68. Atomic hydrogen passivation for photoresponsivity enhancement of boron-doped p-BaSi2 films and performance improvement of boron-doped p-BaSi2/n-Si heterojunction solar cells Reviewed International coauthorship International journal

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    DOI: 10.1063/5.0005763

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  69. Impact of deposition of indium tin oxide double layers on hydrogenated amorphous silicon/crystalline silicon heterojunction Reviewed International journal

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    AIP ADVANCES   Vol. 10 ( 6 )   2020.6

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    DOI: 10.1063/5.0009994

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  70. Significant enhancement of photoresponsivity in As-doped n-BaSi2 epitaxial films by atomic hydrogen passivation Reviewed International journal

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    APPLIED PHYSICS EXPRESS   Vol. 13 ( 5 ) page: .   2020.5

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  71. Undoped p-type BaSi2 emitter prepared by thermal evaporation and post-annealing for crystalline silicon heterojunction solar cells Reviewed International journal

    Kimura Yuki, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 5 )   2020.5

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  72. Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers Reviewed International coauthorship International journal

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    DOI: 10.1016/j.jcrysgro.2020.125522

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  73. 3D visualization of growth interfaces in cast Si ingot using inclusions distribution Reviewed International coauthorship International journal

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    DOI: 10.1016/j.jcrysgro.2020.125535

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  74. Drastic enhancement of photoresponsivity in C-doped BaSi2 films formed by radio-frequency sputtering Reviewed International journal

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    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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  75. Synthesis of Mg2Si thin film by thermal treatment under inert gas atmosphere and evaluation of film quality Reviewed International journal

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  76. Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell Reviewed International journal

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    DOI: 10.35848/1347-4065/ab70a0

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  77. Preparation and thermoelectric characterization of phosphorus-doped Si nanocrystals/silicon oxide multilayers Reviewed International journal

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    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.7567/1347-4065/ab6346

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  78. Influence of the time-dependent vapor composition on structural properties of the BaSi2 thin films fabricated by vacuum evaporation Reviewed International journal

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    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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  79. Fabrication of group IV semiconductor alloys on Si substrate applying Al paste with screen-printing Reviewed International journal

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    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.35848/1347-4065/ab6e0b

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  80. Effects of evaporation vapor composition and post-annealing conditions on carrier density of undoped BaSi2 evaporated films Reviewed International journal

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    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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  81. Effect of Si substrate modification on improving the crystalline quality, optical and electrical properties of thermally-evaporated BaSi2 thin-films for solar cell applications Reviewed International coauthorship International journal

    Mai Thi Kieu Lien, Usami Noritaka

    INTERNATIONAL JOURNAL OF MODERN PHYSICS B   Vol. 34 ( 8 )   2020.3

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    DOI: 10.1142/S021797922050068X

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  82. Surface-orientation control of silicon thin films via aluminum-induced crystallization on monocrystalline cubic substrates International coauthorship

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    JOURNAL OF CRYSTAL GROWTH   Vol. 533   2020.3

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    DOI: 10.1016/j.jcrysgro.2019.125441

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  83. Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition Reviewed International journal

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    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   Vol. 38 ( 2 )   2020.3

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    DOI: 10.1116/1.5134720

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  84. Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide coated crystalline silicon heterocontacts Reviewed International journal

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    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   Vol. 38 ( 2 )   2020.3

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    DOI: 10.1116/1.5134719

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  85. Point defects in BaSi2 thin films for photovoltaic applications studied by positron annihilation spectroscopy International coauthorship

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    DOI: 10.1063/1.5126264

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  86. Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer Reviewed International journal

    Akaishi Ryushiro, Kitazawa Kohei, Gotoh Kazuhiro, Kato Shinya, Usami Noritaka, Kurokawa Yasuyoshi

    NANOSCALE RESEARCH LETTERS   Vol. 15 ( 1 )   2020.2

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    DOI: 10.1186/s11671-020-3272-8

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  87. Work function of indium oxide thin films on p-type hydrogenated amorphous silicon

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    2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 124 - 127   2020

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  88. Structural properties of triple junctions acting as dislocation sources in high-performance Si ingots

    Ohno Yutaka, Tajima Kazuya, Kutsukake Kentaro, Usami Noritaka

    2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 2340 - 2340   2020

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  89. Fabrication of silicon-nanocrystals-embedded silicon oxide passivating contacts

    Tsubata Ryohei, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 969 - 972   2020

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  90. Application of artificial neural network to optimize sensor positions for accurate monitoring: an example with thermocouples in a crystal growth furnace Reviewed International journal

    Boucetta Abderahmane, Kutsukake Kentaro, Kojima Takuto, Kudo Hiroaki, Matsumoto Tetsuya, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 12 )   2019.12

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    DOI: 10.7567/1882-0786/ab52a9

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  91. Tuning the Electrical Properties of Titanium Oxide Bilayers Prepared by Atomic Layer Deposition at Different Temperatures

    Gotoh Kazuhiro, Mochizuki Takeya, Kurokawa Yasuyoshi, Usami Noritaka

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 216 ( 22 )   2019.11

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    DOI: 10.1002/pssa.201900495

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  92. Mossbauer spectroscopic microscope study on diffusion and segregation of Fe impurities in mc-Si wafer Reviewed

    Yoshida Yutaka, Watanabe Tomio, Ino Yuji, Kobayashi Masashi, Takahashi Isao, Usami Noritaka

    HYPERFINE INTERACTIONS   Vol. 240 ( 1 )   2019.9

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    DOI: 10.1007/s10751-019-1651-2

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  93. Hydrogen concentration at a-Si:H/c-Si heterointerfaces-The impact of deposition temperature on passivation performance

    Gotoh Kazuhiro, Wilde Markus, Kato Shinya, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

    AIP ADVANCES   Vol. 9 ( 7 )   2019.7

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    DOI: 10.1063/1.5100086

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  94. Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen International coauthorship

    Xu Zhihao, Shohonov Denis A., Filonov Andrew B., Gotoh Kazuhiro, Deng Tianguo, Honda Syuta, Toko Kaoru, Usami Noritaka, Migas Dmitri B., Borisenko Victor E., Suemasu Takashi

    PHYSICAL REVIEW MATERIALS   Vol. 3 ( 6 )   2019.6

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    DOI: 10.1103/PhysRevMaterials.3.065403

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  95. Evidence of solute PEDOT:PSS as an efficient passivation material for fabrication of hybrid c-Si solar cells Reviewed International journal

    Van Hoang Nguyen, Kato Shinya, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    SUSTAINABLE ENERGY & FUELS   Vol. 3 ( 6 ) page: 1448 - 1454   2019.6

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    DOI: 10.1039/c9se00093c

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  96. Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures International coauthorship

    Ota Yushi, Yurasov Dmitry, Novikov Alexey, Shaleev Mikhail, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 4 )   2019.4

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    DOI: 10.7567/1347-4065/ab003b

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  97. Epitaxial growth of SiGe on Si substrate by printing and firing of Al-Ge mixed paste Reviewed International journal

    Fukami Shogo, Nakagawa Yoshihiko, Hainey Mel E. Jr., Gotoh Kazuhiro, Kurokawa Yasuyoshi, Nakahara Masahiro, Dhamrin Marwan, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 4 )   2019.4

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    DOI: 10.7567/1347-4065/ab00e5

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  98. Local Structure of High Performance TiOx Electron-Selective Contact Revealed by Electron Energy Loss Spectroscopy Reviewed

    Mochizuki Takeya, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Yamamoto Takahisa, Usami Noritaka

    ADVANCED MATERIALS INTERFACES   Vol. 6 ( 3 )   2019.2

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    DOI: 10.1002/admi.201801645

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  99. Pole figure analysis from electron backscatter diffraction-an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy Reviewed

    Hainey Mel Jr., Robin Yoann, Amano Hiroshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

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    DOI: 10.7567/1882-0786/aafb26

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  100. 3D visualization and analysis of dislocation clusters in multicrystalline silicon ingot by approach of data science Reviewed

    Hayama Yusuke, Matsumoto Tetsuya, Muramatsu Tetsuro, Kutsukake Kentaro, Kudo Hiroaki, Usami Noritaka

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   Vol. 189   page: 239-244   2019.1

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    DOI: 10.1016/j.solmat.2018.06.008

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  101. Fabrication of Si1-xGex layer on Si substrate by Screen-Printing

    Nakahara Masahiro, Matsubara Moeko, Suzuki Shota, Fukami Shogo, Dhamrin Manvan, Usami Noritaka

    MRS ADVANCES   Vol. 4 ( 13 ) page: 749 - 754   2019

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    DOI: 10.1557/adv.2019.15

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  102. Effects of Surface Doping of Si Absorbers on the Band Alignment and Electrical Performance of TiO2-Based Electron-Selective Contacts Reviewed

    Lee Hyunju, Kamioka Takefumi, Usami Noritaka, Ohshita Yoshio

    MRS ADVANCES   Vol. 4 ( 13 ) page: 769-775   2019

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    DOI: 10.1557/adv.2019.164

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  103. Significant improvement on electrical properties of BaSi2 due to atomic H passivation by radio-frequency plasma Reviewed

    Xu Zhihao, Gotoh Kazuhiro, Deng Tianguo, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 12-14   2019

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  104. Fine Line Al Printing on Narrow Point Contact Opening for Front Side Metallization Reviewed

    Tsuji Kosuke, Suzuki Shota, Morishita Naoya, Kuroki Takashi, Nakahara Masahiro, Dhamrin Marwan, Peng Zih-Wei, Buck Thomas, Usami Noritaka

    9TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2019)   Vol. 2147   2019

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    DOI: 10.1063/1.5123846

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  105. Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift Reviewed International coauthorship

    Takeda K., Yoneda J., Otsuka T., Nakajima T., Delbecq M. R., Allison G., Hoshi Y., Usami N., Itoh K. M., Oda S., Kodera T., Tarucha S.

    NPJ QUANTUM INFORMATION   Vol. 4   2018.10

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    DOI: 10.1038/s41534-018-0105-z

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  106. Application of weighted Voronoi diagrams to analyze nucleation sites of multicrystalline silicon ingots Reviewed

    Muramatsu Tetsuro, Hayama Yusuke, Kutsukake Kentaro, Maeda Kensaku, Matsumoto Tetsuya, Kudo Hiroaki, Fujiwara Kozo, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 499   page: 62-66   2018.10

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    DOI: 10.1016/j.jcrysgro.2018.07.028

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  107. Fabrication and properties characterization of BaSi2 thin-films thermally-evaporated on Ge (100) modified substrates Reviewed

    Mai Thi Kieu Lien, Nakagawa Yoshihiko, Kurokawa Yasuyoshi, Usami Noritaka

    THIN SOLID FILMS   Vol. 663   page: 14-20   2018.10

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    DOI: 10.1016/j.tsf.2018.08.004

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  108. Activation mechanism of TiOx passivating layer on crystalline Si

    Mochizuki Takeya, Gotoh Kazuhiro, Ohta Akio, Ogura Shohei, Kurokawa Yasuyoshi, Miyazaki Seiichi, Fukutani Katsuyuki, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 10 )   2018.10

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    DOI: 10.7567/APEX.11.102301

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  109. Fabrication of light-trapping structure by selective etching of thin Si substrates masked with a Ge dot layer and nanomasks Reviewed

    Hombe Atsushi, Kurokawa Yasuyoshi, Gotoh Kazuhiro, Akagi Seimei, Yamamoto Yuzo, Yurasov Dmitry, Novikov Alexey, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RF09

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  110. Investigation of effective near-infrared light-trapping structure with submicron diameter for crystalline silicon thin film solar cells

    Sei Miki, Kurokawa Yasuyoshi, Kato Shinya, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RB21

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  111. Influence of barrier layer's height on the performance of Si quantum dot solar cells Reviewed

    Kitazawa Kouhei, Akaishi Ryushiro, Ono Satoshi, Takahashi Isao, Usami Noritaka, Kurokawa Yasuyoshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RF08

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  112. Impact of boron incorporation on properties of silicon solar cells employing p-type polycrystalline silicon grown by aluminum-induced crystallization

    Masuda Shota, Gotoh Kazuhiro, Takahashi Isao, Nakamura Kyotaro, Ohshita Yoshio, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RB12

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  113. Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks

    Ota Yushi, Hombe Atsushi, Nezasa Ryota, Yurasov Dmitry, Novikov Alexey, Shaleev Mikhail, Baidakova Natalie, Morozova Elena, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RB04

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  114. Photovoltaic Science and Engineering FOREWORD

    Matsubara Koji, Yamada Akira, Minemoto Takashi, Itoh Takashi, Arafune Koji, Fujiwara Hiroyuki, Hayase Shuzi, Hiramoto Masahiro, Hishikawa Yoshihiro, Imaizumi Mitsuru, Ito Masakazu, Kaizuka Izumi, Kato Takuya, Komoto Keiichi, Kubo Takaya, Maitani Masato, Masuda Atsushi, Miyajima Shinsuke, Morita Kengo, Negami Takayuki, Ogimoto Kazuhiko, Ohdaira Keisuke, Ohshita Yoshio, Okada Yoshitaka, Okamoto Tamotsu, Osaka Itaru, Sai Hitoshi, Sakurai Takeaki, Shen Qing, Shibata Hajima, Sugaya Takeyoshi, Sugiyama Mutsumi, Takamoto Tatsuya, Tanaka Tooru, Terakawa Akira, Ueda Yuzuru, Usami Noritaka, Wakao Shinji, Yagi Shuhei, Yamanaka Sanshiro, Yoshida Yuji, Yoshita Masahiro

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08R001

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  115. Effect of substrate type on the electrical and structural properties of TiO2 thin films deposited by reactive DC sputtering

    Cheng Xuemei, Gotoh Kazuhiro, Nakagawa Yoshihiko, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 491   page: 120-125   2018.6

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    DOI: 10.1016/j.jcrysgro.2018.04.001

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  116. Improving the photoresponse spectra of BaSi2 layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma

    Xu Zhihao, Gotoh Kazuhiro, Deng Tianguo, Sato Takuma, Takabe Ryota, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    AIP ADVANCES   Vol. 8 ( 5 )   2018.5

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    DOI: 10.1063/1.5025021

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  117. BaSi2 formation mechanism in thermally evaporated films and its application to reducing oxygen impurity concentration

    Hara Kosuke O., Yamamoto Chiaya, Yamanaka Junji, Arimoto Keisuke, Nakagawa Kiyokazu, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.04FS01

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  118. Simple method for significant improvement of minority-carrier lifetime of evaporated BaSi2 thin film by sputtered-AlOx passivation

    N.M. Shaalan, K.O. Hara, C.T. Trinh, Y. Nakagawa, and N. Usami

    Materials Science in Semiconductor Processing   Vol. 76   page: 37-41   2018.3

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  119. Simple method for significant improvement of minority-carrier lifetime of evaporated BaSi2 thin film by sputtered-AlOx passivation

    Shaalan N. M., Hara K. O., Trinh C. T., Nakagawa Y., Usami N.

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 76   page: 37 - 41   2018.3

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    DOI: 10.1016/j.mssp.2017.12.015

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  120. Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

    D. V. Yurasov, A. V. Novikov, M. V. Shaleev, N. A. Baidakova, E. E. Morozova, E. V. Skorokhodov, Y. Ota, A. Hombe, Y. Kurokawa, and N. Usami

    Materials Science in Semiconductor Processing   ( 75 ) page: 143-148   2018.3

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  121. Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

    Yurasov D. V., Novikov A. V., Shaleev M. V., Baidakova N. A., Morozova E. E., Skorokhodov E. V., Ota Y., Hombe A., Kurokawa Y., Usami N.

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 75   page: 143 - 148   2018.3

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    DOI: 10.1016/j.mssp.2017.11.032

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  122. BaSi2 formation mechanism in thermally-evaporated films and its application to reducing oxygen impurity concentration

    K.O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, and N. Usami

    Japanese Journal of Applied Physics   ( 57 ) page: 04FS01   2018.2

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  123. A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%

    Yoneda Jun, Takeda Kenta, Otsuka Tomohiro, Nakajima Takashi, Delbecq Matthieu R., Allison Giles, Honda Takumu, Kodera Tetsuo, Oda Shunri, Hoshi Yusuke, Usami Noritaka, Itoh Kohei M., Tarucha Seigo

    NATURE NANOTECHNOLOGY   Vol. 13 ( 2 ) page: 102 - +   2018.2

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    DOI: 10.1038/s41565-017-0014-x

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  124. Alternative simple method to realize p-type BaSi2 thin films for Si heterojunction solar cell applications

    Takahashi Kazuma, Nakagawa Yoshihiko, Hara Kosuke O., Takahashi Isao, Kurokawa Yasuyoshi, Usami Noritaka

    MRS ADVANCES   Vol. 3 ( 25 ) page: 1435-1442   2018

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    DOI: 10.1557/adv.2018.191

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  125. Suppression of Near-interface Oxidation in Thermally-evaporated BaSi2 Films and Its Effects on Preferred Orientation and the Rectification Behavior of n-BaSi2/p(+)-Si Diodes

    Hara Kosuke O., Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka

    MRS ADVANCES   Vol. 3 ( 25 ) page: 1387-1392   2018

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    DOI: 10.1557/adv.2018.31

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  126. Fabrication of silicon nanowire based solar cells using TiO2/Al2O3 stack thin films

    Kurokawa Yasuyoshi, Nezasa Ryota, Kato Shinya, Miyazaki Hisashi, Takahashi Isao, Usami Noritaka

    MRS ADVANCES   Vol. 3 ( 25 ) page: 1419-1426   2018

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    DOI: 10.1557/adv.2018.40

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  127. Local Structure of High Performance TiOx Passivating Layer Revealed by Electron Energy Loss Spectroscopy

    Mochizuki Takeya, Gotoh Kazuhiro, Ohta Akio, Kurokawa Yasuyoshi, Miyazaki Seiichi, Yamamoto Takahisa, Usami Noritaka

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 3896-3899   2018

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  128. Photoresponsivity improvement of BaSi2 epitaxial films by capping with hydrogenated amorphous Si layers by radio-frequency H-2 plasma

    Xu Zhihao, Gotoh Kazuhiro, Deng Tianguo, Sato Takuma, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 1871-1873   2018

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  129. Application of light trapping structure using Ge dot mask by alkaline etching to heterojunction solar cell

    Hombe Atsushi, Kurokawa Yasuyoshi, Gotoh Kazuhiro, Usami Noritaka

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 3097-3101   2018

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  130. Evaluation of Si Nanowire MOS Capacitor Using High-k Dielectric Materials

    Nezasa R., Kurokawa Y., Usami N.

    2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)     page: .   2018

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  131. Development of the Passivation Layer For P-type CuI Thin Film Fabricated by the 2-step Method as the Novel Hole Selective Contact of Silicon Heterojunction Solar Cells

    Cui Min, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 2118-2120   2018

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  132. Deposition and Characterization of Si Quantum Dot Multilayers Prepared by Plasma Enhanced Chemical Vapor Deposition using SiH4 and CO2 Gases

    Akaishi Ryushiro, Kitazawa Kouhei, Ono Satoshi, Gotoh Kazuhiro, Ichihara Eiji, Kato Shinya, Usami Noritaka, Kurokawa Yasuyoshi

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 2852-2856   2018

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  133. Controllable Optical and Electrical Properties of Nb Doped TiO2 Films by RF Sputtering

    Cheng Xuemei, Gotoh Kazuhiro, Mochizuki Takeya, Usami Noritaka

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 1986-1990   2018

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  134. Investigation on the origin of preferred a-axis orientation of BaSi2 films deposited on Si(100) by thermal evaporation

    Hara Kosuke O., Yamamoto Chiaya, Yamanaka Junji, Arimoto Keisuke, Nakagawa Kiyokazu, Usami Noritaka

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 72   page: 93-98   2017.12

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    DOI: 10.1016/j.mssp.2017.09.020

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  135. Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

    Baidakova N. A., Verbus V. A., Morozova E. E., Novikov A. V., Skorohodov E. V., Shaleev M. V., Yurasov D. V., Hombe A., Kurokawa Y., Usami N.

    SEMICONDUCTORS   Vol. 51 ( 12 ) page: 1542 - 1546   2017.12

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    DOI: 10.1134/S1063782617120028

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  136. Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates

    Y. Arisawa, Y. Hoshi, K. Sawano, J. Yamanaka, K. Arimoto, C. Yamamoto, and N. Usami

    Materials Science in Semiconductor Processing   ( 70 ) page: 127-132   2017.11

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  137. Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates

    Arisawa You, Hoshi Yusuke, Sawano Kentarou, Yamanaka Junji, Arimoto Keisuke, Yamamoto Chiaya, Usami Noritaka

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 70   page: 127 - 132   2017.11

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    DOI: 10.1016/j.mssp.2016.11.024

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  138. Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy

    Arimoto Keisuke, Nakazawa Hiroki, Mitsui Shohei, Utsuyama Naoto, Yamanaka Junji, Hara Kosuke O., Usami Noritaka, Nakagawa Kiyokazu

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 32 ( 11 )   2017.11

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    DOI: 10.1088/1361-6641/aa8a87

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  139. Investigation on the origin of preferred a-axis orientation of BaSi2 films deposited on Si(100) by thermal evaporation

    K. O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, and N. Usami

    Materials Science in Semiconductor Processing   ( 72 ) page: 93-98   2017.10

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  140. Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets

    Deng Tianguo, Gotoh Kazuhiro, Takabe Ryota, Xu Zhihao, Yachi Suguru, Yamashita Yudai, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    JOURNAL OF CRYSTAL GROWTH   Vol. 475   page: 186-191   2017.10

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    DOI: 10.1016/j.jcrysgro.2017.06.017

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  141. Formation of metastable cubic phase in SnS thin films fabricated by thermal evaporation

    Hara Kosuke O., Suzuki Shintaro, Usami Noritaka

    THIN SOLID FILMS   Vol. 639   page: 7 - 11   2017.10

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    DOI: 10.1016/j.tsf.2017.08.025

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  142. Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy

    K. Arimoto, H. Nakazawa, S. Mitsui, N. Utsuyama, J. Yamanaka, K. O. Hara, N. Usami, and K. Nakagawa

    Semiconductor Science and Technology   ( 32 ) page: 114002   2017.9

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  143. Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source

    Hara Kosuke O., Cham Thi Trinh, Kurokawa Yasuyoshi, Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka

    THIN SOLID FILMS   Vol. 636   page: 546-551   2017.8

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    DOI: 10.1016/j.tsf.2017.06.055

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  144. Formation of metastable cubic phase in SnS thin films fabricated by thermal evaporation

    K. O. Hara, S. Suzuki, N. Usami

    Thin Solid Films   ( 639 ) page: 7-11   2017.8

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  145. Effects of surface morphology randomness on optical properties of Si-based photonic nanostructures

    Kurokawa Yasuyoshi, Aonuma Osamu, Tayagaki Takeshi, Takahashi Isao, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 8 )   2017.8

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    DOI: 10.7567/JJAP.56.08MA02

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  146. Effect of Surface Morphology Randomness on Optical Properties of Si-based Photonic Nanostructures Reviewed

    Y. Kurokawa, O. Aonuma, T. Tayagaki ,I. Takahashi, and N. Usami

    Jpn. J. Appl. Phys.   ( 56 ) page: 08MA02   2017.7

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  147. Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n+ Solar Cells

    M. M. Rahman, Yi-Chia Tsai, Ming-Yi Lee, A. Higo, Yiming Li, Y. Hoshi, N. Usami, and S. Samukawa

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 64   page: 7   2017.7

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  148. Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n(+) Solar Cells

    Rahman Mohammad Maksudur, Tsai Yi-Chia, Lee Ming-Yi, Higo Akio, Li Yiming, Hoshi Yusuke, Usami Noritaka, Samukawa Seiji

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 64 ( 7 ) page: 2886-2892   2017.7

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    DOI: 10.1109/TED.2017.2704294

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  149. On the growth mechanism of multicrystalline silicon ingots with small grains fabricated using single-layer silicon beads

    Muramatsu Tetsurou, Takahashi Isao, Babu G. Anandha, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 7 )   2017.7

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    DOI: 10.7567/JJAP.56.075502

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  150. Effects of grain boundary structure controlled by artificially designed seeds on dislocation generation Reviewed International journal

    Iwata Taisho, Takahashi Isao, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 7 )   2017.7

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    DOI: 10.7567/JJAP.56.075501

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  151. Impact of anodic aluminum oxide fabrication and post-deposition anneal on the effective carrier lifetime of vertical silicon nanowires

    Van Hoang Nguyen, Sichanugrist Porponth, Kato Shinya, Usami Noritaka

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   Vol. 166   page: 39 - 44   2017.7

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    DOI: 10.1016/j.solmat.2017.03.013

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  152. Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source

    K. O. Hara, C. T. Trinh. Y. Kurokawa; K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami

    Thin Solid Films   ( 646 ) page: 546-551   2017.6

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  153. Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets

    T. Deng, K. Gotoh, R. Takabe, Z. Xu, S. Yachi, Y. Yamashita, K. Toko, N. Usami, and T. Suemasu

    Journal of Crystal Growth   ( 475 ) page: 186-191   2017.6

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  154. Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique

    Y. Arisawa, K. Sawano, and N. Usami

    Journal of Crystal Growth   Vol. 468   page: 601-604   2017.6

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  155. Controlling impurity distributions in crystalline Si for solar cells by using artificial designed defects

    Hayama Yusuke, Takahashi Isao, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 610 - 613   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.092

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  156. Towards optimized nucleation control in multicrystalline silicon ingot for solar cells

    G.A.Babu, I.Takahashi, T.Muramatsu, and N.Usami

    Journal of Crystal Growth   Vol. 468   page: 620-624   2017.6

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  157. Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE

    K.Arimoto, S.Yagi, J.Yamanaka, K.O.Hara, K.Sawano, N.Usami, and K.Nakagawa

    Journal of Crystal Growth   Vol. 468   page: 625-629   2017.6

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  158. Controlling Impurity Distribution in Quasi-mono Crystalline Si Ingot by Seed Manipulation for Artificially Controlled Defect Technique

    Y. Hayama, I. Takahashi, and N. Usami

    Energy Procedia   Vol. 127   page: 610-613   2017.6

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  159. Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE

    Arimoto Keisuke, Yagi Sosuke, Yamanaka Junji, Hara Kosuke O., Sawano Kentarou, Usami Noritaka, Nakagawa Kiyokazu

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 625 - 629   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.076

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  160. Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique

    Arisawa You, Sawano Kentarou, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 601 - 604   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.065

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  161. Towards optimized nucleation control in multicrystalline silicon ingot for solar cells

    Babu G. Anandha, Takahashi Isao, Muramatsu Tetsurou, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 620 - 624   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.066

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  162. On the growth mechanism of multicrystalline silicon ingots with small grains by using single layer silicon beads

    T. Muramatsu, I. Takahashi, G. Anandha babu, and N. Usami

    Japanese Journal of Applied Physics   ( 56 ) page: 075502   2017.6

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  163. Effects of grain boundary structure controlled by artificially designed seeds on dislocation generation

    T. Iwata, I. Takahashi, and N. Usami

    Japanese Journal of Applied Physics   ( 56 ) page: 075501   2017.6

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  164. Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties

    Cham Thi Trinh, Nakagawa Yoshihiko, Hara Kosuke O., Kurokawa Yasuyoshi, Takabe Ryota, Suemasu Takashi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.05DB06

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  165. Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorber for solar cells

    Bayu M. Emha, Cham Thi Trinh, Takabe Ryota, Yachi Suguru, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.05DB01

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  166. Investigation of p-type emitter layer materials for heterojunction barium disilicide thin film solar cells

    Takahashi Kazuma, Nakagawa Yoshihiko, Hara Kosuke O., Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.05DB04

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  167. Postannealing effects on undoped BaSi2 evaporated films grown on Si substrates

    Suhara Takamichi, Murata Koichi, Navabi Aryan, Hara Kosuke O., Nakagawa Yoshihiko, Cham Thi Trinh, Kurokawa Yasuyoshi, Suemasu Takashi, Wang Kang L., Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.05DB05

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  168. Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties Reviewed

    C. T. Trinh, Y. Nakagawa, K. O. Hara, Y. Kurokawa, R. Takabe, T. Suemasu, and N. Usami

    Jpn. J. Appl. Phys.   ( 56 ) page: 05DB06   2017.4

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  169. Postannealing effects on undoped BaSi2 evaporated films grown on Si substrates Reviewed

    T. Suhara, K. Murata, A. Navabi, K. O. Hara, Y. Nakagawa, C. T. Trinh, Y. Kurokawa, T. Suemasu, K. L. Wang, and N. Usami

    Jpn. J. Appl. Phys.   ( 56 ) page: 05DB05   2017.4

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  170. Investigation of p-type emitter layer materials for heterojunction barium disilicide thin film solar cells Reviewed

    K. Takahashi, Y. Nakagawa, K. O. Hara, Y. Kurokawa, and N. Usami

    Jpn. J. Appl. Phys.   ( 56 ) page: 05DB04   2017.4

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  171. Post-annealing effects on the surface structure and carrier lifetime of evaporated BaSi2 films

    Hara Kosuke O., Cham Thi Trinh, Kurokawa Yasuyoshi, Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

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    DOI: 10.7567/JJAP.56.04CS07

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  172. Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells

    Tayagaki Takeshi, Furuta Daichi, Aonuma Osamu, Takahashi Isao, Hoshi Yusuke, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

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    DOI: 10.7567/JJAP.56.04CS01

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  173. Impact of anodic aluminum oxide fabrication and post-deposition anneal on the effective carrier lifetime of vertical silicon nanowires

    V. H. Nguyen, P. Sichanugrist, S. Kato, and N. Usami

    Solar Energy Materials and Solar Cells   Vol. 166   page: 39-44   2017.3

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  174. Post-annealing effects on the surface structure and carrier lifetime of evaporated BaSi2 films Reviewed

    K. O. Hara, C. T. Trinh, Y. Kurokawa, K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami

    Japanese Journal of Applied Physics   Vol. 56   page: 04CS07   2017.3

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  175. Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorber for solar cells Reviewed

    M. E. Bayu, C. T. Trinh, R. Takabe, S. Yachi, K. Toko, N. Usami, and T. Suemasu

    Jpn. J. Appl. Phys.   ( 56 ) page: 05DB01   2017.2

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  176. Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells Reviewed

    T.Tayagaki, D.Furuta, O.Aonuma, I.Takahashi, Y.Hoshi, Y.Kurokawa, and N.Usami

    Japanese Journal of Applied Physics   Vol. 56   page: 04CS01   2017.1

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  177. Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications

    Suemasu Takashi, Usami Noritaka

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 50 ( 2 ) page: 1-18   2017.1

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    DOI: 10.1088/1361-6463/50/2/023001

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  178. TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon Reviewed

    J. Yamanaka, N. Usami, S. Amtablian, A. Fave, M. Lemiti, C. Yamamoto, and K. Nakagawa

    Journal of Materials Science and Chemical Engineering   Vol. 5   page: 26-34   2017.1

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  179. Preferred Orientation of BaSi2 Thin Films Fabricated by Thermal Evaporation

    K. O. Hara, C. T. Trinh, Y. Nakagawa, Y. Kurokawa, K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami

    JJAP Conference Proceedings   ( 5 ) page: 11202   2017

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  180. Realization of Crystalline BaSi2 Thin Films by Vacuum Evaporation on (111)-oriented Si Layers Fabricated by Aluminum Induced Crystallization

    J. A. Wibowo, I. Takahashi, K. O. Hara, and N. Usami

    JJAP Conference Proceedings   ( 5 ) page: 11201   2017

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  181. Controlling impurity distributions in crystalline Si for solar cells by using artificial designed defects

    Y.Hayama, I.Takahashi, and N.Usami

    Journal of Crystal Growth   Vol. 468   page: 625-629   2017

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  182. Selective Etching of Si, SiGe, Ge and Its Usage for Increasing the Efficiency of Silicon Solar Cells

    N.A. Baidakova, V.A. Verbus, E.E. Morozova, A.V. Novikov, E.V. Skorohodov, M.V. Shaleev, D.V. Yurasov, A. Hombe, Y. Kurokawa, and N. Usami

    Semiconductors   Vol. 51 ( 12 ) page: 1542-1546   2017

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  183. Development of Spin-coated Copper Iodide Film on Silicon for Use in Hole-selective Contacts

    K. Gotoh, M. Cui, I. Takahashi, Y. Kurokawa, and N. Usami

    Energy Procedia   Vol. 124   page: 598-603   2017

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  184. Controlling impurity distribution in quasi-mono crystalline Si ingot by seed manipulation for artificially controlled defects technique

    Hayama Yusuke, Takahashi Isao, Usami Noritaka

    7TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2017   Vol. 124   page: 734-739   2017

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    DOI: 10.1016/j.egypro.2017.09.088

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  185. Development of spin-coated copper iodide on silicon for use in hole-selective contacts

    Gotoh Kazuhiro, Cui Min, Takahashi Isao, Kurokawa Yasuyoshi, Usami Noritaka

    7TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2017   Vol. 124   page: 598-603   2017

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    DOI: 10.1016/j.egypro.2017.09.081

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  186. Fabrication of CuI/a-Si:H/c-Si Structure for Application to Hole-selective Contacts of Heterojunction Si Solar Cells

    Gotoh Kazuhiro, Cui Min, Thanh Nguyen Cong, Koyama Koichi, Takahashi Isao, Kurokawa Yasuyoshi, Matsumura Hideki, Usami Noritaka

    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)     page: 1765-1768   2017

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  187. Solar Cells Application of p-type poly-Si Thin Film by Aluminum Induced Crystallization

    Masuda Shota, Gotoh Kazuhiro, Takahashi Isao, Nakamura Kyotaro, Ohshita Yoshio, Usami Noritaka

    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)     page: 1794-1796   2017

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  188. Numerical simulation and performance optimization of perovskite solar cell

    Nanduri Sai Naga Raghuram, Siddiki Mahbube K., Chaudhry Ghulam M., Alharthi Yahya Z.

    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)     page: 1018 - 1021   2017

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  189. Exploring the Potential of Semiconducting BaSi2 for Thin-Film Solar Cell Applications Reviewed

    T. Suemasu and N. Usami

    Journal of Physics D: Applied Physics   Vol. 50   page: 023001   2016.11

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  190. Effects of the Si/Al layer thickness on the continuity, crystalline orientation and the growth kinetics of the poly-Si thin films formed by aluminum-induced crystallization

    S.Tutashkonko, N.Usami

    Thin Solid Films   Vol. 616   page: 213-219   2016.10

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  191. Growth direction control of dendrite crystals in parallel direction to realize high-quality multicrystalline silicon ingot

    T.Hiramatsu, I.Takahashi, S.Matsushima, and N.Usami

    Jpn. J. Appl. Phys.   Vol. 55   page: 091302   2016.8

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  192. Light-induced recovery of effective carier lifetime in boron-doped Czochralski silicon at room temperature Reviewed

    H.Ichikawaa, I.Takahashi, N.Usami, K.Shirasawa, H.Takato

    Energy Procedia   Vol. 92   page: 801-807   2016.8

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  193. Photoresponse properties of BaSi2 film grown on Si (100) by vacuum evaporation .

    C.T.Trinh, Y.Nakagawa, K.O.Hara, R.Takabe, T.Suemasu, and N.Usami

    Materials Research Express   Vol. 3 ( 7 ) page: 076204   2016.7

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  194. Evidence for efficient passivation of vertical silicon nanowires by anodic aluminum oxide

    V.H.Nguyen, S.Kato, and N.Usami

    Solar Energy Materials and Solar Cells   Vol. 157   page: 393-398   2016.7

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  195. Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities Reviewed

    S.Joonwichien, I.Takahashi, K.Kutsukake, and N.Usami

    PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS     2016.5

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    DOI: DOI: 10.1002/pip.2795

  196. p-BaSi2/n-Si heterojunction solar cells with conversion efficiency reaching 9.0%

    D.Tsukahara, S.Yachi, H.Takeuchi, R.Takabe, W.Du, M.Baba, Y.Li, K.Toko, N.Usami, and T.Suemasu

    APPLIED PHYSICS LETTERS   Vol. 108   page: 152101   2016.4

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  197. Modulated surface nanostructures for enhanced light trapping and reduced surface reflection of crystalline silicon solar cells Reviewed

    T.Tayagaki, Y.Hoshi, Y.Hirai, Y.Matsuo, and N.Usami

    Japanese Journal of Applied Physics   ( 55 ) page: 52302   2016.4

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  198. Simple vacuum evaporation route to BaSi2 thin films for solar cell applications Reviewed

    K.O.Hara, Y.Nakagawa, T.Suemasu, and N. Usami

    Energy Procedia   Vol. 141   page: 27-31   2016.3

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  199. On the mechanism of BaSi2 thin film formation on Si substrate by vacuum evaporation Reviewed

    Y.Nakagawaa, K.O.Hara, T.Suemasu, and N.Usami

    Energy Procedia   Vol. 141   page: 23-26   2016.3

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  200. Improved multicrystalline silicon ingot quality using single layer silicon beads coated with silicon nitride as seed layer

    G.Anandha babu, I.Takahashi, S.Matsushima, and N.Usami

    Journal of Crystal Growth   Vol. 441   page: 124-130   2016.2

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  201. Effect of passivation layer grown by atomic layer deposition and sputtering processes on Si quantum dot superlattice to generate high photocurrent for high-efficiency solar cells

    M.M.Rahman, A.Higo, H.Sekhar, M.E.Syazwan, Y.Hoshi, N.Usami, and S.Samukawa

    Japanese Journal of Applied Physics   ( 55 ) page: 032303   2016.2

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  202. Control of electrical properties of BaSi2 thin films by alkali-metal doping using alkali-metal fluorides Reviewed

    K.O.Hara, W.Du, K.Arimoto, J.Yamanaka, K.Nakagawa, K.Toko, T. Suemasu, and N.Usami

    Thin Solid Films   Vol. 603   page: 218-223   2016.2

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  203. Compressively strained Si/Si1_xCx heterostructures formed on Ar ion implanted Si(100) substrates Reviewed

    Y.Hoshi, Y.Arisawa, K. Arimoto, J.Yamanaka, K.Nakagawa, K.Sawano, and N.Usami

    Japanese Journal of Applied Physics   Vol. 55   page: 031302   2016.2

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  204. Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells

    M.M.Rahman, M-Y, Lee, Y-C,Tsai, A. Higo, H.Sekhar, M.Igarashi, M.E.Syazwan, Y.Hoshi, K.Sawano, N.Usami, Y.Li, and S.Samukawa

    PROGRESS IN PHOTOVOLTAICS   ( 28 ) page: 774-780   2015.12

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    DOI: 10.1002/pip.2726

  205. Structural and electrical characterizations of crack-free BaSi2 thin filmsfabricated by thermal evaporation

    K.O.Hara, J.Yamanaka, K. Arimoto, K.Nakagawa, T.Suemasu, N.Usami

    Thin Solid Films   Vol. 595   page: 68-72   2015.10

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  206. Seed manipulation for artificially controlled defect technique in new growth method for quasi-monocrystalline Si ingot based on casting Reviewed

    I.Takahashi, S.Joonwichien, T.Iwata, and N.Usami

    Applied Physics Express   Vol. 8   page: 105501   2015.9

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  207. Selective growth of vertical silicon nanowire array guided by anodic aluminum oxide template Reviewed

    V.H.Nguyen, Y.Hoshi, N.Usami, M.Konagai

    Japanese Journal of Applied Physics   Vol. 54   page: 095003   2015.8

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  208. Comparison of phosphorus gettering effect in faceted dendrite and small grain of multicrystalline silicon wafers grown by floating cast method Reviewed

    S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KD11   2015.7

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  209. Application of heterojunction to Si-based solar cells using photonic nanostructures coupled with vertically aligned Ge quantum dots Reviewed

    I.Takahashi, Y.Hoshi, T.Tayagaki, T.Oikawa, K.Ohdaira, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KA06   2015.7

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  210. Fabrication of single-phase BaSi2 thin films on silicon substrates by vacuumevaporation for solar cell applications Reviewed

    Y.Nakagawa, K.O.Hara, T.Suemasu, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KC03   2015.7

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  211. Effect of Anodization Process of Aluminum Oxide Template on Selective Growth of Si Nanowires Reviewed

    V.H.Nguyen, S.Tutashkonko, Y.Hoshi, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KA02   2015.6

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  212. Geometry in Si-based photonic nanostructures coupled with Ge quantum dot multilayers and its impact on optical properties Reviewed

    O.Aonuma, Y.Hoshi, T.Tayagaki, A.Novikov, D.Yurasov, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KA01   2015.6

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  213. Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy Reviewed

    K.Shojiki, J-H.Choi, T.Iwabuchi, N.Usami, T.Tanikawa, S.Kuboya, T.Hanada, R.Katayama, T.Matsuoka

    Applied Physics Letters   Vol. 106   page: 222102   2015.6

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  214. Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot

    I.Takahashi, S.Joonwichien, S.Matsushima, N.Usami

    Journal of Applied Physics   ( 117 ) page: 095701   2015.3

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  215. Realization of single-phase BaSi2 films by vacuum evaporation with suitable optical properties and carrier lifetime for solar cell applications Reviewed

    K.O.Hara, Y.Nakagawa, T.Suemasu, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 07JE02   2015.3

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  216. Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy

    D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu

    Japanese Journal of Applied Physics   Vol. 54 ( 3 ) page: 030306   2015.3

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  217. Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy Reviewed

    D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu

    Japanese Journal of Applied Physics   Vol. 54   page: 030306   2015.2

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  218. Absorption enhancement in nanotextured solar cells with Ge/Si heterostructures

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami

    Japanese Journal of Applied Physics   ( 54 ) page: 04DR03   2015.1

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  219. Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization Reviewed

    K.Toko, M.Nakata, A.Okada, M.Sasase, N.Usami, T.Suemasu

    INTERNATIONAL JOURNAL OF PHOTOENERGY   ( 2015 ) page: 790242   2015.1

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  220. バルク結晶成長のこの10年 Reviewed

    宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志

      Vol. 42 ( 1 ) page: pp.64-68   2015

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  221. Light trapping by direction-dependent light transmission in front-surface photonic nanostructures

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami

    Applied Physics Express   Vol. 7   page: 122301   2014.11

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  222. Simulation study of Ge/Si heterostructured solar cells yielding improved open-circuit voltage and quantum efficiency

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, I.Takahashi, N.Usami

    Japanese Journal of Applied Physics   ( 53 ) page: 110312   2014.10

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  223. Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy

    D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu

    D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu   Vol. 116   page: 123709   2014.9

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  224. Towards implementation of floating cast method for growing large-scale high-quality multicrystalline silicon ingot using designed double crucibles

    S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami

    PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS   ( 22 ) page: 726-732   2014.7

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  225. Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique

    M.Baba, K.Watanabe, K.O.Hara, K.Toko, T.Sekiguchi, N.Usami, T.Suemasu

    Japanese Journal of Applied Physics   ( 53 ) page: 078004   2014.6

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  226. Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications

    W.D, M.Baba, K.Toko, K.Kosuke, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu

    Journal of Applied Physics   Vol. 115   page: 223701   2014.6

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  227. Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications

    W.Du, M.Baba, K.Toko, K.O.Hara, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu

    Journal of Applied Physics   Vol. 115   page: 223701   2014.6

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  228. Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111) Reviewed

    R.Takabe, K.O.Hara, M.Baba, W.Du, N.Shimada, K.Toko, N.Usami, T.Suemasu

      ( 115 ) page: 193510   2014.5

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  229. Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells

    T.Tayagaki, Y.Hoshi, K.Ooi, T.Kiguchi, N.Usami

    Thin Solid Films   Vol. 557   page: 368-371   2014.4

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    DOI: 10.1016/j.tsf.2013.08.042

  230. Control of geometry in Si-based photonic nanostructures formed by maskless wet etching process and its impact on optical properties

    Y.Hoshi, T.Tayagaki, T.Kiguchi, N.Usami

    Thin Solid Films   Vol. 557   page: 338-341   2014.4

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    DOI: 10.1016/j.tsf.2013.10.066

  231. Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange

    R.Numata, K.Toko, N.Usami, T.Suemasu

    Thin Solid Films   Vol. 557   page: 147-150   2014.4

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    DOI: 10.1016/j.tsf.2013.08.044

  232. Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer

    R.Numata, K.Toko, K.Nakazawa, N.Usami, T.Suemasu

    Thin Solid Films   Vol. 557   page: 143-146   2014.4

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    DOI: 10.1016/j.tsf.2013.08.040

  233. N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing

    K.O.Hara, Y.Hoshi, N.Usami, Y.Shiraki, K.Nakamura, K.Toko, T.Suemasu

    Thin Solid Films   Vol. 557   page: 90-93   2014.4

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    DOI: 10.1016/j.tsf.2013.08.038

  234. Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange

    K.Toko, R.Numata, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    Journal of Applied Physics   Vol. 115 ( 9 ) page: 094301   2014.3

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    DOI: 10.1063/1.4867218

  235. Formation process of Si3N4 particles on surface of Si ingots grown using silica crucibles with Si3N4 coating by noncontact crucible method

    K.Nakajima, K.Morishita, R.Murai, N.Usami

    Journal of Crystal Growth   Vol. 389   page: 112-119   2014.3

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    DOI: 10.1016/j.jcrysgro.2013.12.006

  236. Orientation control of Ge thin films by underlayer-selected Al-induced crystallization

    K.Toko, K.Nakazawa, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    CrystEngComm   Vol. 16 ( 13 ) page: 2578-2583   2014.2

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    DOI: 10.1039/c3ce42057d

  237. Structural characterization of polycrystalline Ge thin films on insulators formed by diffusion-enhanced Al-induced layer exchange

    R.Numata, K.Toko, N.Oya, N.Usami and T.Suemasu

    Japanese Journal of Applied Physics   Vol. 53   page: 04EH03   2014.2

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  238. Al-induced crystallization of amorphous Ge thin films on conducting layer coated glass substrates

    K.Nakazawa, K.Toko, N.Usami, T.Suemasu

    Japanese Journal of Applied Physics   Vol. 53   page: 04EH01   2014.2

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  239. Fabrication and characterization of BaSi2 epitaxial films over 1 mu m in thickness on Si(111) Reviewed

    R.Takabe, K.Nakamura, M.Baba, W.Du, M.A.Khan, K.Toko, M.Sasase, K.Hara, N.Usami, T.Suemasu

    Japanese Journal of Applied Physics   Vol. 53   page: 04ER04   2014.2

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  240. Enhanced photocarrier generation in large-scale photonic nanostructures fabricated from vertically aligned quantum dots

    T.Tayagaki, Y.Hoshi, Y.Kishimoto, and N.Usami

    Optics Express   Vol. 22 ( 52 ) page: A225-A232   2014.1

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    DOI: 10.1364/oe.22.00a225

  241. Low-temperature (180 degrees C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

    K.Toko, R.Numata, N.Oya, N.Fukata, N.Usami, T.Suemasu

    Applied Physics Letters   Vol. 104 ( 2 ) page: 022106   2014.1

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    DOI: 10.1063/1.4861890

  242. Grazing-incidence small-angle X-ray scattering from Ge nanodots self-organized on Si(001) examined with soft X-rays

    T.Yamamoto, H.Okuda, K.Takeshita, N.Usami, Y.Kitajima, H.Ogawa

    Journal of Synchrotron Radiation   Vol. 21   page: 161-164   2014.1

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    DOI: 10.1107/s1600577513026088

  243. Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains

    K.kutsukake, N.Usami, Y.Ohno,Y.Tokumoto, I.Yonenaga

    Ieee Journal of Photovoltaics   Vol. 4 ( 1 ) page: 84-87   2014.1

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    DOI: 10.1109/jphotov.2013.2281730

  244. Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates

    K.Nakazawa, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1781-1784   2013.12

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  245. Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates

    M.Baba, K.O.Hara, K.Toko, N.Saito, N.Yoshizawa, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1756-1768   2013.12

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  246. Investigation of the tunneling properties and surface morphologies of BaSi2/Si tunnel junctions for BaSi2 solar cell applications

    W.Du, M.Baba, R.Takabe, N.Zhang, K.Toko, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1765-1768   2013.12

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  247. Fabrication of BaSi2 films on (111)-oriented Si layers formed by inverted Al-induced crystallization method on glass structure

    R.Numata, K.Toko, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1769-1772   2013.12

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  248. Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy

    R.Takabe, M.Baba, K.Nakamura, W.Du, M.A.Khan, S.Koike, K.Toko, K.O.Hara, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1753-1755   2013.12

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  249. Mechanism of strain relaxation in BaSi2 epitaxial films on Si(111) substrates during post-growth annealing and application for film exfoliation

    K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1677-1680   2013.11

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  250. Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant-Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing

    K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu

    Applied Physics Express   Vol. 6   page: 112302   2013.11

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  251. Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing

    K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu

    Applied Physics Express   Vol. 6 ( 11 ) page: 112302   2013.10

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    DOI: 10.7567/apex.6.112302

  252. Theory of open-circuit voltage and the driving force of charge separation in pn-junction solar cells

    K.O.Hara, N.Usami

    Journal of Applied Physics   Vol. 114   page: 153101   2013.10

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  253. Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy

    M.Baba, S.Tsurekawa, K.Watanabe, W.Du, K.Toko, K.O.Hara, N.Usami, T.Sekiguchi, T.Suemasu

    Applied Physics Letters   Vol. 103   page: 142113   2013.9

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  254. Investigation of the open-circuit voltage in solar cells doped with quantum dots

    T.Tayagaki, Y.Hoshi, N.Usami

    Scientific Reports   Vol. 3   page: 2703   2013.9

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    DOI: 10.1038/srep02703

  255. Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries

    K.Kutsukake, N.Usami, Y.Ohno, Y.Tokumoto, I.Yonenaga

    Applied Physics Express   Vol. 6   page: 025505   2013.9

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  256. Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy

    Y.Funase, M.Suzuno, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu

    Journal of Crystal Growth   Vol. 378   page: 365-367   2013.9

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  257. Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature

    XJ.Xu, N.Usami, T.Maruizumi, Y.Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 636-639   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.11.002

  258. On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique

    K.Sawano, Y.Hoshi, S.Nagakura, K.Arimoto, K.Nakagawa, N.Usami, Y.Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 251-253   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.100

  259. Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells

    M.A.Khan, K.O.Hara, K.Nakamura, W.J.Du, M.Baba, K.Toh, M.Suzuno, K.Toko, N.Usami, T.Suemasu

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 201-204   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.153

  260. Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy

    S.Koike, K.Toh, M.Baba, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 198-200   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.052

  261. Gas-source MBE growth of strain-relaxed Si1-xCx on Si(100) substrates

    K.Arimoto, S.Sakai, H.Furukawa, J.Yamanaka, K.Nakagawa, N.Usami, Y.Hoshi, K.Sawano, Y.Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 212-217   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.152

  262. Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy

    M.Baba, K.Toh, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 193-197   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.176

  263. Large-Grained Polycrystalline (111) Ge Films on Insulators by Thickness-Controlled Al-Induced Crystallization

    K. Nakazawa, K. Toko, N. Saitoh, N.Usami and T. Suemasu

    Ecs Journal of Solid State Science and Technology   Vol. 2 ( 11 ) page: Q195-Q199   2013.8

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    DOI: 10.1149/2.007311jss

  264. Control of Dip Shape in Photonic Nanostructures by Maskless Wet-Etching Process and Its Impact on Optical Properties

    Y.Hoshi, WG.Pan, T.Kiguchi, K.Ooi, T.Tayagaki, N.Usami

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 ) page: UNSP 080202   2013.8

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    DOI: 10.7567/JJAP.52.080202

  265. Double-Layered Ge Thin Films on Insulators Formed by an Al-Induced Layer-Exchange Process

    K.Toko, K.Nakazawa, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    Crystal Growth & Design   Vol. 13 ( 9 ) page: 3908-3912   2013.7

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    DOI: 10.1021/cg4005533

  266. Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates

    K.Toko, N.Fukata, K.Nakazawa, M.Kurosawa, N.Usami, M.Miyao, T.Suemasu

    JOURNAL OF CRYSTAL GROWTH   Vol. 372   page: 189-192   2013.6

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    DOI: 10.1016/j.jcrysgro.2013.03.031

  267. Effect of Ga content and growth temperature on Cu(In,Ga)Se2 thin film deposited on heat-resistant glass substrates

    T.Higuchi, N.Usami, T.Minemoto

    Phys.Status Solidi C   Vol. 10   page: 1035-1037   2013.5

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  268. Generation of high photocurrent in three-dimensional silicon quantum dot superlattice fabricated by combining bio-template and neutral beam etching for quantum dot solar cells

    M.Igarashi, WG.Hu, M.M.Rahman, N.Usami, S.Samukawa

    NANOSCALE RESEARCH LETTERS   Vol. 8   page: 228   2013.5

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    DOI: 10.1186/1556-276X-8-228

  269. Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation

    K.O.Hara, Y.Hoshi, N.Usami, Y.Shiraki, K.Nakamura, K.Toko, T.Suemasu,

    THIN SOLID FILMS   Vol. 534   page: 470-473   2013.5

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    DOI: 10.1016/j.tsf.2013.02.014

  270. Effects of crystal defects and their interactions with impurities on electrical properties of multicrystalline Si

    S.Joonwichien, S.Matsushima, N.Usami

    JOURNAL OF APPLIED PHYSICS   Vol. 113 ( 13 ) page: 133503   2013.4

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    DOI: 10.1063/1.4798600

  271. Orientation Control of Large-Grained Si Films on Insulators by Thickness-Modulated Al-Induced Crystallization

    R.Numata, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    CRYSTAL GROWTH & DESIGN   Vol. 13 ( 4 ) page: 1767-1770   2013.4

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    DOI: 10.1021/cg4000878

  272. In-situ heavily p-type doping of over 10(20) cm(-3) in semiconducting BaSi2 thin films for solar cells applications

    M.A.Khan, K.O.Hara, W.Du, M.Baba, K.Nakamura, M.Suzuno, K.Toko, N.Usami, T.Suemasu

    APPLIED PHYSICS LETTERS   Vol. 102 ( 11 ) page: 112107   2013.3

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    DOI: 10.1063/1.4796142

  273. Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)

    K. Nakamura, M. Baba, M. A. Khan, W. Du, M. Sasase, K. O. Hara, N. Usami, K. Toko and T. Suemasu

    Journal of Applied Physics   Vol. 113 ( 5 )   2013.2

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    DOI: 10.1063/1.4790597

  274. Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries

    K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto and I. Yonenaga

    Applied Physics Express   Vol. 6 ( 2 )   2013.2

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    DOI: 10.7567/APEX.6.025505

  275. On the growth mechanism of polycrystalline silicon thin film by Al-induced layer exchange process

    N. Usami, M. N. Jung and T. Suemasu

    Journal of Crystal Growth   Vol. 362   page: 16-19   2013.1

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  276. Effects of formation of mini-bands in two-dimensional array of silicon nanodisks with SiC interlayer for quantum dot solar cells

    M. Igarashi, M. F. Budiman, W. G. Pan, W. G. Hu, Y. Tamura, M. E. Syazwan, N. Usami and S. Samukawa

    Nanotechnology   Vol. 24 ( 1 )   2013.1

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    DOI: 10.1088/0957-4484/24/1/015301

  277. Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx(001)

    R. E. Balderas-Navarro, N. A. Ulloa-Castillo, K. Arimoto, G. Ramirez-Melendez, L. F. Lastras-Martinez, H. Furukawa, J. Yamanaka, A. Lastras-Martinez, J. M. Flores-Camacho, N. Usami, D. Stifter and K. Hingerl

    Applied Physics Letters   Vol. 102 ( 1 )   2013.1

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    DOI: 10.1063/1.4773560

  278. Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy

    K. Arimoto, H. Furukawa, J. Yamanaka, C. Yamamoto, K. Nakagawa, N. Usami, K. Sawano and Y. Shiraki

    Journal of Crystal Growth   Vol. 362   page: 276-281   2013.1

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  279. Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy

    M.Baba, S.Tsurekawa, K.Watanabe, W.Du, K.Toko, K.O.Hara, N.Usami, T.Sekiguchi and T.Suemasu

    Applied Physics Letters   Vol. 103   page: 142113   2013

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    DOI: 10.1063/1.4824335

  280. Theory of open-circuit voltage and the driving force of charge separation in pn-junction solar cells

    K.O. Hara, N.Usami

    Journal of Applied Physics   Vol. 114 ( 15 ) page: 153101   2013

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    DOI: 10.1063/1.4825046

  281. Silicon-Based Light-Emitting Devices Based on Ge Self-Assembled Quantum Dots Embedded in Optical Cavities

    X. J. Xu, S. Narusawa, T. Chiba, T. Tsuboi, J. S. Xia, N. Usami, T. Maruizumi and Y. Shiraki

    Ieee Journal of Selected Topics in Quantum Electronics   Vol. 18 ( 6 ) page: 1830-1838   2012.12

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  282. Influence of Thermal Annealing on the Carrier Extraction in Ge/Si Quantum Dot Solar Cells

    T. Tayagaki, N. Usami and Y. Kanemitsu

    Japanese Journal of Applied Physics   Vol. 51 ( 10 )   2012.10

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    DOI: 10.1143/JJAP.51.10NE24

  283. Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness

    A. Okada, K. Toko, K. O. Hara, N. Usami and T. Suemasu

    Journal of Crystal Growth   Vol. 356   page: 65-69   2012.10

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  284. Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization

    K. Ohdaira, K. Sawada, N. Usami, S. Varlamov and H. Matsumura

    Japanese Journal of Applied Physics   Vol. 51 ( 10 )   2012.10

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    DOI: 10.1143/JJAP.51.10NB15

  285. Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate

    K. O. Hara, N. Usami, K. Toh, K. Toko and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 51 ( 10 )   2012.10

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    DOI: 10.1143/JJAP.51.10NB06

  286. Growth velocity and grain size of multicrystalline solar cell silicon

    I. Brynjulfsen, K. Fujiwara, N. Usami and L. Amberg

    Journal of Crystal Growth   Vol. 356   page: 17-21   2012.10

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  287. Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon

    K. O. Hara, N. Usami, K. Toh, M. Baba, K. Toko and T. Suemasu

    Journal of Applied Physics   Vol. 112 ( 8 )   2012.10

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    DOI: 10.1063/1.4759246

  288. Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature

    K. Toh, K. O. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 51 ( 9 )   2012.9

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    DOI: 10.1143/JJAP.51.095501

  289. Enhanced carrier extraction from Ge quantum dots in Si solar cells under strong photoexcitation

    T. Tayagaki, N. Usami, W. G. Pan, Y. Hoshi, K. Ooi and Y. Kanemitsu

    Applied Physics Letters   Vol. 101 ( 13 )   2012.9

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    DOI: 10.1063/1.4756895

  290. Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 mu m on Si(111)

    M. Baba, K. Nakamura, W. J. Du, M. A. Khan, S. Koike, K. Toko, N. Usami, N. Saito, N. Yoshizawa and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 51 ( 9 )   2012.9

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    DOI: 10.1143/JJAP.51.098003

  291. Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

    K. Toko, M. Kurosawa, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao and T. Suemasu

    Applied Physics Letters   Vol. 101 ( 7 )   2012.8

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    DOI: 10.1063/1.4744962

  292. Quantum dot solar cells using 2-dimensional array of 6.4-nm-diameter silicon nanodisks fabricated using bio-templates and neutral beam etching

    M. Igarashi, M. F. Budiman, W. G. Pan, W. G. Hu, N. Usami and S. Samukawa

    Applied Physics Letters   Vol. 101 ( 6 )   2012.8

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    DOI: 10.1063/1.4745195

  293. Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities

    X. J. Xu, T. Tsuboi, T. Chiba, N. Usami, T. Maruizumi and Y. Shiraki

    Optics Express   Vol. 20 ( 13 ) page: 14714-14721   2012.6

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  294. Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique

    M. Baba, K. Toh, K. Toko, N. Saito, N. Yoshizawa, K. Jiptner, T. Sekiguchi, K. O. Hara, N. Usami and T. Suemasu

    Journal of Crystal Growth   Vol. 348 ( 1 ) page: 75-79   2012.6

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  295. Simultaneous enhanced photon capture and carrier generation in Si solar cells using Ge quantum dot photonic nanocrystals

    N. Usami, W. G. Pan, T. Tayagaki, S. T. Chu, J. S. Li, T. H. Feng, Y. Hoshi and T. Kiguchi

    Nanotechnology   Vol. 23 ( 18 )   2012.5

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    DOI: 10.1088/0957-4484/23/18/185401

  296. Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities

    T. Tsuboi, X. J. Xu, J. S. Xia, N. Usami, T. Maruizumi and Y. Shiraki

    Applied Physics Express   Vol. 5 ( 5 )   2012.5

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    DOI: 10.1143/APEX.5.052101

  297. Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures

    T. Tanaka, Y. Hoshi, K. Sawano, N. Usami, Y. Shiraki and K. M. Itoh

    Applied Physics Letters   Vol. 100 ( 22 )   2012.5

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    DOI: 10.1063/1.4723690

  298. Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates

    K. Toh, K. O. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko and T. Suemasu

    Journal of Crystal Growth   Vol. 345 ( 1 ) page: 16-21   2012.4

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  299. Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress

    K. Nakajima, R. Murai, K. Morishita, K. Kutsukake and N. Usami

    Journal of Crystal Growth   Vol. 344 ( 1 )   2012.4

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    DOI: 10.1016/j.jcrysgro.2012.01.051

  300. Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

    T. Iwabuchi, Y. H. Liu, T. Kimura, Y. T. Zhang, K. Prasertsuk, H. Watanabe, N. Usami, R. Katayama and T. Matsuoka

    Japanese Journal of Applied Physics   Vol. 51 ( 4 )   2012.4

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    DOI: 10.1143/JJAP.51.04DH02

  301. Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells

    W. J. Du, M. Suzuno, M. A. Khan, K. Toh, M. Baba, K. Nakamura, K. Toko, N. Usami and T. Suemasu

    Applied Physics Letters   Vol. 100 ( 15 )   2012.4

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    DOI: 10.1063/1.3703585

  302. Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n(+)-BaSi2/p(+)-Si Tunnel Junction to Undoped BaSi2 Overlayers

    W. J. Du, T. Saito, M. A. Khan, K. Toko, N. Usami and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 51 ( 4 )   2012.4

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    DOI: 10.1143/JJAP.51.04DP01

  303. Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films

    K. O. Hara, N. Usami, Y. Hoshi, Y. Shiraki, M. Suzuno, K. Toko and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 50 ( 12 )   2011.12

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    DOI: 10.1143/JJAP.50.121202

  304. The effect of the presence of an Al-doped ZnO layer on the preferential crystal orientation of polycrystalline silicon thin films grown by an Al-induced layer exchange method

    M. Jung, A. Okada, T. Saito, T. Suemasu and N. Usami

    Journal of Ceramic Processing Research   Vol. 12   page: S187-S192   2011.11

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  305. Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth

    K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, I. Yonenaga, K. Morishita and K. Nakajima

    Journal of Applied Physics   Vol. 110 ( 8 )   2011.10

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    DOI: 10.1063/1.3652891

  306. Formation mechanism of twin boundaries during crystal growth of silicon

    K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, K. Morishita and K. Nakajima

    Scripta Materialia   Vol. 65 ( 6 ) page: 556-559   2011.9

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  307. Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation

    Y. Hoshi, K. Sawano, A. Yamada, S. Nagakura, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Applied Physics Express   Vol. 4 ( 9 )   2011.9

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    DOI: 10.1143/APEX.4.095701

  308. Configuration and local elastic interaction of ferroelectric domains and misfit dislocation in PbTiO3/SrTiO3 epitaxial thin films

    T. Kiguchi, K. Aoyagi, Y. Ehara, H. Funakubo, T. Yamada, N. Usami and T. J. Konno

    Science and Technology of Advanced Materials   Vol. 12 ( 3 )   2011.6

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    DOI: 10.1088/1468-6996/12/3/034413

  309. Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells

    N. Usami, I. Takahashi, K. Kutsukake, K. Fujiwara and K. Nakajima

    Journal of Applied Physics   Vol. 109 ( 8 )   2011.4

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    DOI: 10.1063/1.3576108

  310. Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels

    K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, K. Arimoto, K. Nakagawa, N. Usami and Y. Shiraki

    Microelectronic Engineering   Vol. 88   page: 465-468   2011.4

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  311. In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization

    M. Jung, A. Okada, T. Saito, T. Suemasu, C. Y. Chung, Y. Kawazoe and N. Usami

    Japanese Journal of Applied Physics   Vol. 50 ( 4 )   2011.4

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    DOI: 10.1143/JJAP.50.04DP02

  312. Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities

    I. Takahashi, N. Usami, H. Mizuseki, Y. Kawazoe, G. Stokkan and K. Nakajima

    Journal of Applied Physics   Vol. 109 ( 3 )   2011.2

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    DOI: 10.1063/1.3544208

  313. Pattern formation mechanism of a periodically faceted interface during crystallization of Si

    M. Tokairin, K. Fujiwara, K. Kutsukake, H. Kodama, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 312 ( 24 ) page: 3670-3674   2010.12

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  314. A grazing incidence small-angle x-ray scattering analysis on capped Ge nanodots in layer structures

    H. Okuda, M. Kato, K. Kuno, S. Ochiai, N. Usami, K. Nakajima and O. Sakata

    Journal of Physics-Condensed Matter   Vol. 22 ( 47 )   2010.12

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    DOI: 10.1088/0953-8984/22/47/474003

  315. Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization

    H. Suzuki, N. Usami, A. Nomura, T. Shishido, K. Nakajima and T. Suemasu

    Journal of Crystal Growth   Vol. 312 ( 22 ) page: 3257-3260   2010.11

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  316. Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope

    L. Gu, Y. Yu, W. Sigle, N. Usami, S. Tsukimoto, J. Maier, Y. Ikuhara and P. A. van Aken

    Applied Physics Letters   Vol. 97 ( 21 )   2010.11

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    DOI: 10.1063/1.3518703

  317. Room-temperature electroluminescence from Si microdisks with Ge quantum dots

    J. S. Xia, Y. Takeda, N. Usami, T. Maruizumi and Y. Shiraki

    Optics Express   Vol. 18 ( 13 ) page: 13945-13950   2010.6

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  318. Growth mechanism of the Si < 110 > faceted dendrite

    K. Fujiwara, H. Fukuda, N. Usami, K. Nakajima and S. Uda

    Physical Review B   Vol. 81 ( 22 )   2010.6

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    DOI: 10.1103/PhysRevB.81.224106

  319. Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed

    I. Takahashi, N. Usami, K. Kutsukake, G. Stokkan, K. Morishita and K. Nakajima

    Journal of Crystal Growth   Vol. 312 ( 7 ) page: 897-901   2010.3

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  320. Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique

    Y. Hoshi, K. Sawano, A. Yamada, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Journal of Applied Physics   Vol. 107 ( 10 )   2010.3

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    DOI: 10.1063/1.3374688

  321. Optical anisotropies of Si grown on step-graded SiGe(110) layers

    R. E. Balderas-Navarro, L. F. Lastras-Martinez, K. Arimoto, R. Castro-Garcia, O. Villalobos-Aguilar, A. Lastras-Martinez, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    Applied Physics Letters   Vol. 96 ( 9 )   2010.3

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    DOI: 10.1063/1.3339881

  322. Formation of uniaxially strained SiGe by selective ion implantation technique

    K. Sawano, Y. Hoshi, A. Yamada, Y. Hiraoka, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Thin Solid Films   Vol. 518 ( 9 ) page: 2454-2457   2010.2

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  323. Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth

    N. Usami, R. Yokoyama, I. Takahashi, K. Kutsukake, K. Fujiwara and K. Nakajima

    Journal of Applied Physics   Vol. 107 ( 1 )   2010.1

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    DOI: 10.1063/1.3276219

  324. Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation

    Y. Hoshi, K. Sawano, A. Yamada, K. Arimoto, N. Usami, K. Nakagawa and Y. Shiraki

    Thin Solid Films   Vol. 518   page: S162-S164   2010.1

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  325. Computational Investigation of Relationship between Shear Stress and Multicrystalline Structure in Silicon

    I. Takahashi, N. Usami, K. Kutsukake, K. Morishita and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 49 ( 4 )   2010

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    DOI: 10.1143/JJAP.49.04DP01

  326. Fabrication of n(+)-BaSi2/p(+)-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications

    T. Saito, Y. Matsumoto, M. Suzuno, M. Takeishi, R. Sasaki, T. Suemasu and N. Usami

    Applied Physics Express   Vol. 3 ( 2 )   2010

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    DOI: 10.1143/APEX.3.021301

  327. Lattice-Latching Effect in Metalorganic Vapor Phase Epitaxy Growth of InGaAsN Film Lattice-Matched to Bulk InGaAs Substrate

    S. Sanorpim, R. Katayama, K. Onabe, N. Usami and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 49 ( 4 )   2010

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    DOI: 10.1143/JJAP.49.040202

  328. Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells

    Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, T. Saito, T. Suemasu, N. Usami and M. Sasase

    Japanese Journal of Applied Physics   Vol. 49   2010

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    DOI: 10.1143/JJAP.49.04DP05

  329. On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization

    M. Jung, A. Okada, T. Saito, T. Suemasu and N. Usami

    Applied Physics Express   Vol. 3 ( 9 )   2010

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    DOI: 10.1143/APEX.3.095803

  330. Growth behavior of faceted Si crystals at grain boundary formation

    K. Fujiwara, S. Tsumura, M. Tokairin, K. Kutsukake, N. Usami, S. Uda and K. Nakajima

    Journal of Crystal Growth   Vol. 312 ( 1 ) page: 19-23   2009.12

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  331. Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth

    M. Tokairin, K. Fujiwara, K. Kutsukake, N. Usami and K. Nakajima

    Physical Review B   Vol. 80 ( 17 )   2009.11

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    DOI: 10.1103/PhysRevB.80.174108

  332. Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content

    R. Nihei, N. Usami and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 48 ( 11 )   2009.11

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    DOI: 10.1143/JJAP.48.115507

  333. Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates

    K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    Solid-State Electronics   Vol. 53 ( 10 ) page: 1135-1143   2009.10

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  334. Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures

    K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Applied Physics Letters   Vol. 95   2009.9

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    DOI: 10.1063/1.3229998

  335. Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

    D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami and T. Suemasu

    Journal of Crystal Growth   Vol. 311 ( 14 ) page: 3581-3586   2009.7

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  336. Microstructures of Si multicrystals and their impact on minority carrier diffusion length

    H. Y. Wang, N. Usami, K. Fujiwara, K. Kutsukake and K. Nakajima

    Acta Materialia   Vol. 57 ( 11 ) page: 3268-3276   2009.6

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  337. Photoresponse Properties of Polycrystalline BaSi2 Films Grown on SiO2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method

    D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami and T. Suemasu

    Applied Physics Express   Vol. 2 ( 5 )   2009.5

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    DOI: 10.1143/APEX.2.051601

  338. Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots

    J. Xia, R. Tominaga, S. Fukamitsu, N. Usami and Y. Shiraki

    Japanese Journal of Applied Physics   Vol. 48 ( 2 )   2009.2

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    DOI: 10.1143/JJAP.48.022102

  339. Quantitative analysis of subgrain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance

    K. Kutsukake, N. Usami, T. Ohtaniuchi, K. Fujiwara and K. Nakajima

    Journal of Applied Physics   Vol. 105 ( 4 )   2009.2

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    DOI: 10.1063/1.3079504

  340. Floating cast method to realize high-quality Si bulk multicrystals for solar cells

    Y. Nose, I. Takahashi, W. Pan, N. Usami, K. Fujiwara and K. Nakajima

    Journal of Crystal Growth   Vol. 311 ( 2 ) page: 228-231   2009.1

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  341. Resonant photoluminescence from Ge self-assembled dots in optical microcavities

    J. S. Xia, R. Tominaga, N. Usami, S. Iwamoto, Y. Ikegami, K. Nemoto, Y. Arakawa and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 311   page: 883-887   2009

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  342. Local control of strain in SiGe by ion-implantation technique

    K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 311 ( 3 ) page: 806-808   2009

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  343. Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method

    Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Sato, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 311 ( 3 ) page: 825-828   2009

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  344. Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures

    K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano and Y. Shiraki

    J. Cryst. Growth   Vol. 311   page: 819-824   2009

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  345. Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates

    K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    J. Cryst. Growth   Vol. 311   page: 809-813   2009

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  346. Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates

    K. Arimoto, G. Kawaguchi, K. Shimizu, M. Watanabe, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano and Y. Shiraki

    J. Cryst. Growth   Vol. 311   page: 814-818   2009

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  347. Influence of growth temperature and cooling rate on the growth of Si epitaxial layer by dropping-type liquid phase epitaxy from the pure Si melt

    Z. M. Wang, K. Kutsukake, H. Kodama, N. Usami, K. Fujiwara, Y. Nose and K. Nakajima

    Journal of Crystal Growth   Vol. 310 ( 24 ) page: 5248-5251   2008.12

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  348. Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities

    I. Takahashi, N. Usami, R. Yokoyama, Y. Nose, K. Kutuskake, K. Fuilwara and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 47 ( 12 ) page: 8790-8792   2008.12

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  349. Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation

    K. Sawano, Y. Hoshi, A. Yamada, Y. Hiraoka, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Applied Physics Express   Vol. 1 ( 12 )   2008.12

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    DOI: 10.1143/APEX.1.121401

  350. Room-temperature light-emission from Ge quantum dots in photonic crystals

    J. Xia, K. Nemoto, Y. Ikegami, N. Usami, Y. Nakata and Y. Shiraki

    Thin Solid Films   Vol. 517 ( 1 ) page: 125-127   2008.11

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  351. Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials

    N. Usami, R. Nihei, Y. Azuma, I. Yonenaga, K. Nakajima, K. Sawano and Y. Shiraki

    Thin Solid Films   Vol. 517 ( 1 ) page: 14-16   2008.11

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  352. Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition

    M. Mitsui, M. Tamoto, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Sato, N. Usami, K. Sawano and Y. Shiraki

    Thin Solid Films   Vol. 517 ( 1 ) page: 254-256   2008.11

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  353. Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer

    K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    Thin Solid Films   Vol. 517 ( 1 ) page: 235-238   2008.11

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  354. Vacancy formation during oxidation of silicon crystal surface

    M. Suezawa, Y. Yamamoto, M. Suemitsu, N. Usami and I. Yonenaga

    Applied Physics Letters   Vol. 93 ( 10 )   2008.9

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    DOI: 10.1063/1.2979708

  355. Development of thin SiGe relaxed layers with high-Ge composition by ion implantation method and application to strained Ge channels

    Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Satoh, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa and Y. Shiraki

    Applied Physics Express   Vol. 1 ( 8 )   2008.8

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    DOI: 10.1143/APEX.1.081401

  356. Growth mechanism of Si-faceted dendrites

    K. Fujiwara, K. Maeda, N. Usami and K. Nakajima

    Physical Review Letters   Vol. 101 ( 5 )   2008.8

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    DOI: 10.1103/PhysRevLett.101.055503

  357. Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals

    N. Usami, K. Kutsukake, K. Fujiwara, I. Yonenaga and K. Nakajima

    Applied Physics Express   Vol. 1 ( 7 )   2008.7

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    DOI: 10.1143/APEX.1.075001

  358. Acceptorlike behavior of defects in SiGe alloys grown by molecular beam epitaxy

    M. Satoh, K. Arimoto, K. Nakagawa, S. Koh, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 47 ( 6 ) page: 4630-4633   2008.6

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  359. In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts

    K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose, A. Nomura, T. Shishido and K. Nakajima

    Acta Materialia   Vol. 56 ( 11 ) page: 2663-2668   2008.6

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  360. On effects of gate bias on hole effective mass and mobility in strained-Ge channel structures

    K. Sawano, Y. Kunishi, Y. Satoh, K. Toyama, K. Arimoto, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki

    Applied Physics Express   Vol. 1 ( 1 )   2008.1

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    DOI: 10.1143/APEX.1.011401

  361. Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures

    K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   Vol. 40 ( 6 ) page: 2122-2124   2008

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  362. Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films

    K. Ohdaira, Y. Abe, M. Fukuda, S. Nishizaki, N. Usami, K. Nakajima, T. Karasawa, T. Torikai and H. Matsumura

    THIN SOLID FILMS   Vol. 516 ( 5 ) page: 600-603   2008

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  363. Functional enhancement of metal-semiconductor-metal infrared photodetectors on heteroepitaxial SiGe-on-Si using the anodic oxidation/passivation method

    R. W. Chuang, Z. L. Liao, H. T. Chiang and N. Usami

    Jpn. J. Appl. Phys.   Vol. 47   page: 2927-2931   2008

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  364. Modification of local structures in multicrystals revealed by spatially resolved x-ray rocking curve analysis

    N. Usami, K. Kutsukake, K. Fujiwara and K. Nakajima

    Journal of Applied Physics   Vol. 102 ( 10 )   2007.11

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    DOI: 10.1063/1.2816207

  365. High-quality polycrystalline silicon films with minority carrier lifetimes over 5 mu s formed by flash lamp annealing of precursor amorphous silicon films prepared by catalytic chemical vapor deposition

    K. Ohdaira, S. Nishizaki, Y. Endo, T. Fujiwara, N. Usami, K. Nakajima and H. Matsumura

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 46 ( 11 ) page: 7198-7203   2007.11

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  366. Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks

    J. S. Xia, K. Nemoto, Y. Ikegami, Y. Shiraki and N. Usami

    Applied Physics Letters   Vol. 91 ( 1 )   2007.7

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    DOI: 10.1063/1.2754356

  367. SiGe double barrier resonant tunneling diodes on bulk SiGe substrates with high peak-to-valley current ratio

    S. Tsujino, N. Usami, A. Weber, G. Mussler, V. Shushunova, D. Grutzmacher, Y. Azuma and K. Nakajima

    Applied Physics Letters   Vol. 91   2007.7

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    DOI: 10.1063/1.2756363

  368. Formation mechanism of parallel twins related to Si-facetted dendrite growth

    K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose and K. Nakajima

    Scripta Materialia   Vol. 57 ( 2 ) page: 81-84   2007.7

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  369. Application of Czochralski-grown SiGe bulk crystal as a substrate for luminescent strained quantum wells

    N. Usami, R. Nihei, I. Yonenaga, Y. Nose and K. Nakajima

    Applied Physics Letters   Vol. 90 ( 18 )   2007.4

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    DOI: 10.1063/1.2735286

  370. Improvement in the conversion efficiency of single-junction SiGe solar cells by intentional introduction of the compositional distribution

    M. Tayanagi, N. Usami, W. Pan, K. Ohdaira, K. Fujiwara, Y. Nose and K. Nakajima

    Journal of Applied Physics   Vol. 101 ( 5 )   2007.3

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    DOI: 10.1063/1.2709575

  371. Influence of structural imperfection of Sigma 5 grain boundaries in bulk multicrystalline Si on their electrical activities

    K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose and K. Nakajima

    Journal of Applied Physics   Vol. 101 ( 6 )   2007.3

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    DOI: 10.1063/1.2710348

  372. Step-induced anisotropic growth of pentacene thin film crystals on a hydrogen-terminated Si(111) surface

    S. Nishikata, G. Sazaki, T. Takeuchi, N. Usami, S. Suto and K. Nakajima

    Crystal Growth & Design   Vol. 7 ( 2 ) page: 439-444   2007.2

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  373. Modification of local structure and its influence on electrical activity of near (310) Sigma 5 grain boundary in bulk silicon

    K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose, T. Sugawara, T. Shishido and K. Nakajima

    Materials Transactions   Vol. 48 ( 2 ) page: 143-147   2007.2

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  374. Effect of the compositional distribution on the photovoltaic power conversion of SiGe solar cells

    N. Usami, W. Pan, K. Fujiwara, M. Tayanagi, K. Ohdaira and K. Nakajima

    Solar Energy Materials and Solar Cells   Vol. 91   page: 123-128   2007.1

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  375. Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer

    N. Usami, K. Kutsukake, N. Kazuo, S. Amtablian, A. Fave and M. Lemiti

    Applied Physics Letters   Vol. 90 ( 3 )   2007.1

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    DOI: 10.1063/1.2433025

  376. Fabrication of Ge channels with extremely high compressive strain and their magnetotransport properties

    K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 301   page: 339-342   2007

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  377. Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(110) substrates by gas-source MBE

    K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    J. Cryst. Growth   Vol. 301   page: 343-348   2007

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  378. Annihilation of acceptor-hydrogen pairs in Si crystals due to electron irradiation

    M. Suezawa, K. Koilma, A. Kasuya, I. Yonenaga and N. Usami

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 45 ( 12 ) page: 9162-9166   2006.12

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  379. Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature

    J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami and Y. Nakata

    Applied Physics Letters   Vol. 89 ( 20 )   2006.11

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    DOI: 10.1063/1.2386915

  380. Magnetotransport properties of Ge channels with extremely high compressive strain

    K. Sawano, Y. Kunishi, Y. Shiraki, K. Toyama, T. Okamoto, N. Usami and K. Nakagawa

    Applied Physics Letters   Vol. 89 ( 16 )   2006.10

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    DOI: 10.1063/1.2354467

  381. Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting

    K. Fujiwara, W. Pan, N. Usami, K. Sawada, M. Tokairin, Y. Nose, A. Nomura, T. Shishido and K. Nakajima

    Acta Materialia   Vol. 54 ( 12 ) page: 3191-3197   2006.7

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  382. High sensitive imaging of atomic arrangement of Ge clusters buried in a Si crystal by X-ray fluorescence holography

    S. Kusano, S. Nakatani, K. Sumitani, T. Takahashi, Y. Yoda, N. Usami and Y. Shiraki

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 45 ( 6A ) page: 5248-5253   2006.6

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  383. Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate

    N. Usami, Y. Nose, K. Fujiwara and K. Nakajima

    Applied Physics Letters   Vol. 88   2006.5

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    DOI: 10.1063/1.2735286

  384. Realization of bulk multicrystalline silicon with controlled grain boundaries by utilizing spontaneous modification of grain boundary configuration

    N. Usami, K. Kutsukake, T. Sugawara, K. Fujwara, W. Pan, Y. Nose, T. Shishido and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 45 ( 3A ) page: 1734-1737   2006.3

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  385. High-efficiency concave and conventional solar cell integration system using focused reflected light

    K. Ohdaira, K. Fujiwara, W. Pan, N. Usami and K. Nakajiima

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 45 ( 3A ) page: 1664-1667   2006.3

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  386. Intermixing of Ge and Si during exposure of GeH4 on Si

    G. Watari, N. Usami, Y. Nose, K. Fujiwara, G. Sazaki and K. Nakajima

    THIN SOLID FILMS   Vol. 508   page: 163-165   2006

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  387. Strain field and related roughness formation in SiGe relaxed buffer layers

    K. Sawano, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    THIN SOLID FILMS   Vol. 508 ( 1-2 ) page: 117-119   2006

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  388. Influence of stacked Ge islands on the dark current-voltage characteristics and the conversion efficiency of the solar cells

    A. Alguno, N. Usami, K. Ohdaira, W. G. Pan, M. Tayanagi and K. Nakajima

    Thin Solid Films   Vol. 508   page: 402-405   2006

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  389. Determination of lattice parameters of SiGe/Si(110) heterostructures

    K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, S. Koh and N. Usami

    Thin Solid Films   Vol. 508   page: 132-135   2006

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  390. Directional growth method to obtain high quality polycrystalline silicon from its melt

    K. Fujiwara, W. Pan, K. Sawada, M. Tokairin, N. Usami, Y. Nose, A. Nomura, T. Shishido and K. Nakajima

    J. Cryst. Growth   Vol. 292   page: 282-285   2006

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  391. Thickness dependence of strain field distribution in SiGe relaxed buffer layers

    K. Sawano, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 44   page: 8445-8447   2005.12

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  392. Analysis of the dark-current density in solar cells based on multicrystalline SiGe

    K. Ohdaira, N. Usami, W. G. Pan, K. Fujiwara and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 44 ( 11 ) page: 8019-8022   2005.11

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  393. Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition

    N. Usami, M. Kitamura, K. Obara, Y. Nose, T. Shishido and K. Nakajima

    Journal of Crystal Growth   Vol. 284   page: 57-64   2005.10

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  394. Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent

    Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima and T. Ujihara

    Journal of Applied Physics   Vol. 98 ( 7 )   2005.10

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    DOI: 10.1063/1.2061891

  395. Changes in elastic deformation of strained si by microfabrication (vol 8, pg 181, 2005)

    K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami

    Materials Science in Semiconductor Processing   Vol. 8 ( 6 ) page: 652-652   2005.10

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  396. Liquid phase epitaxial growth of Si layers on Si thin substrates from Si pure melts under near-equilibrium conditions

    K. Nakajima, K. Fujiwara, Y. Nose and N. Usami

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 44 ( 7A ) page: 5092-5095   2005.7

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  397. Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique

    M. Kitamura, N. Usami, T. Sugawara, K. Kutsukake, K. Fujiwara, Y. Nose, T. Shishido and K. Nakajima

    Journal of Crystal Growth   Vol. 280   page: 419-424   2005.7

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  398. Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study

    T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima

    Thin Solid Films   Vol. 476 ( 1 ) page: 206-209   2005.4

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  399. A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal

    Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara and K. Nakajima

    Journal of Crystal Growth   Vol. 276   page: 393-400   2005.4

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  400. Structural properties of directionally grown polycrystalline SiGe for solar cells

    K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima

    Journal of Crystal Growth   Vol. 275   page: 467-473   2005.3

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  401. On the origin of improved conversion efficiency of solar cells based on SiGe with compositional distribution

    N. Usami, K. Fujiwara, W. G. Pan and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 44 ( 2 ) page: 857-860   2005.2

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  402. Growth of ZnO/MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect

    B. P. Zhang, N. T. Binh, K. Wakatsuki, C. Y. Liu and Y. Segawa and N. Usami

    Applied Physics Letters   Vol. 86 ( 3 )   2005.1

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    DOI: 10.1063/1.1850594

  403. Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate

    G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima

    Journal of Crystal Growth   Vol. 273   page: 594-602   2005.1

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  404. Floating zone growth of Si bicrystals using seed crystals with artificially designed grain boundary configuration

    N. Usami, M. Kitamura, T. Sugawara, K. Kutsukake, K. Ohdaira, Y. Nose, K. Fujiwara, T. Shishido and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters & Express Letters   Vol. 44 ( 24-27 ) page: L778-L780   2005

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  405. Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures

    K. Sawano, N. Usami, K. Arimoto, S. Koh, K. Nakagawa and Y. Shiraki

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 8 ( 1-3 ) page: 177-180   2005

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  406. Strain-field evaluation of strain-relaxed thin SiGe layers fabricated by ion implantation method

    K. Sawano, Y. Ozawa, A. Fukuoto, N. Usami, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa and Y. Shiraki

    Japanese Journal of Applied Physics Part 2-Letters & Express Letters   Vol. 44 ( 42-45 ) page: L1316-L1319   2005

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  407. Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams

    K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki

    International Journal of Materials & Product Technology   Vol. 22   page: 185-212   2005

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  408. Changes in elastic deformation of strained Si by microfabrication

    K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami

    Materials Science in Semiconductor Processing   Vol. 8   page: 181-185   2005

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  409. Low-temperature growth of single-crystalline ZnO tubes on sapphire(0001) substrates

    B. P. Zhang, N. T. Binh, K. Wakatsuki, N. Usami and Y. Segawa

    Applied Physics a-Materials Science & Processing   Vol. 79 ( 7 ) page: 1711-1714   2004.11

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  410. Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

    K. Sawano, S. Koh, Y. Shiraki, Y. Ozawa, T. Hattori, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa and N. Usami

    Applied Physics Letters   Vol. 85 ( 13 ) page: 2514-2516   2004.9

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  411. On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates

    K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki and K. Nakajima

    Applied Physics Letters   Vol. 85 ( 8 ) page: 1335-1337   2004.8

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  412. Low-temperature growth of ZnO nanostructure networks

    B. P. Zhang, K. Wakatsuki, N. T. Binh, Y. Segawa and N. Usami

    Journal of Applied Physics   Vol. 96 ( 1 ) page: 340-343   2004.7

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  413. Pressure-dependent ZnO nanocrsytal growth in a chemical vapor deposition process

    B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki and H. Koinuma

    Journal of Physical Chemistry B   Vol. 108   page: 10899-10902   2004.7

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  414. Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution

    W. G. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima and R. Shimokawa

    Journal of Applied Physics   Vol. 96 ( 2 ) page: 1238-1241   2004.7

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  415. Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation

    Y. Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara and T. Ujihara

    Japanese Journal of Applied Physics Part 2-Letters & Express Letters   Vol. 43 ( 7A ) page: L907-L909   2004.7

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  416. Structural and optical properties of ZnO epitaxial films grown on Al2O3 (1120) substrates by metalorganic chemical vapor deposition

    N. T. Binh, B. P. Zhang, C. Y. Liu, K. Wakatsuki, Y. Segawa, N. Usami, Y. Yamada, M. Kawasaki and H. Koinuma

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 43 ( 7A ) page: 4110-4113   2004.7

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  417. Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy

    T. Ujihara, E. Kanda, K. Obara, K. Fujiwara, N. Usami, G. Sazaki, A. Alguno, T. Shishido and K. Nakajima

    Journal of Crystal Growth   Vol. 266 ( 4 ) page: 467-474   2004.6

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  418. Grain growth behaviors of polycrystalline silicon during melt growth processes

    K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima

    Journal of Crystal Growth   Vol. 266 ( 4 ) page: 441-448   2004.6

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  419. Formation of highly aligned ZnO tubes on sapphire (0001) substrates

    B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki and H. Koinuma

    Applied Physics Letters   Vol. 84 ( 20 ) page: 4098-4100   2004.3

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  420. Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition

    B. P. Zhang, K. Wakatsuki, N. T. Binh, N. Usami and Y. Segawa

    Thin Solid Films   Vol. 449   page: 12-19   2004.2

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  421. Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe

    N. Usami, W. G. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 43 ( 2B ) page: L250-L252   2004.2

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  422. In situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy

    G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima

    Journal of Crystal Growth   Vol. 262   page: 536-542   2004.2

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  423. Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate

    G. Sazaki, T. Fujino, J. T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, Y. Takahashi, E. Matsubara, T. Sakurai and K. Nakajima

    Journal of Crystal Growth   Vol. 262   page: 196-201   2004.2

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  424. In-situ observations of melt growth behavior of polycrystalline silicon

    K. Fujiwara, Y. Obinata, T. Ujhara, N. Usami, G. Sazaki and K. Nakajima

    Journal of Crystal Growth   Vol. 262   page: 124-129   2004.2

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  425. Low-temperature growth of ZnO epitaxial films by metal organic chemical vapor deposition

    B. P. Zhang, N. T. Binh, K. Wakatsuki, N. Usami and Y. Segawa

    Applied Physics a-Materials Science & Processing   Vol. 78 ( 1 ) page: 25-28   2004.1

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  426. Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations

    K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki and T. Shishido

    Journal of Crystal Growth   Vol. 260   page: 372-383   2004.1

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  427. Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime

    N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki and K. Nakajima

    THIN SOLID FILMS   Vol. 451   page: 604-607   2004

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  428. Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy

    T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima

    MATERIALS SCIENCE FORUM   Vol. 457-460   page: 633-636   2004

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  429. Molten metal flux growth and properties of CrSi2

    T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima

    JOURNAL OF ALLOYS AND COMPOUNDS   Vol. 383   page: 319-321   2004

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  430. Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

    K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang and Y. Segawa

    Appl. Surf. Sci.   Vol. 224 ( 1-4 ) page: 95-98   2004

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  431. Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer

    A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y. Shiraki

    Applied Physics Letters   Vol. 84 ( 15 ) page: 2802-2804   2004

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  432. High-temperature solution growth and characterization of chromium disilicide

    T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. H. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, Y. Murakami, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y. Yokoyama, S. Kohiki, Y. Kawazoe and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 42 ( 12 ) page: 7292-7293   2003.12

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  433. In-plane strain fluctuation in strained-Si/SiGe heterostructures

    K. Sawano, S. Koh, Y. Shiraki, N. Usami and K. Nakagawa

    Applied Physics Letters   Vol. 83 ( 21 ) page: 4339-4341   2003.11

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  434. Optical properties of ZnO rods formed by metalorganic chemical vapor deposition

    B. P. Zhang, N. T. Binh, Y. Segawa, K. Wakatsuki and N. Usami

    Applied Physics Letters   Vol. 83 ( 8 ) page: 1635-1637   2003.8

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  435. Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure

    A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima and Y. Shiraki

    Applied Physics Letters   Vol. 83 ( 6 ) page: 1258-1260   2003.8

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  436. Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix

    N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki and K. Nakajima

    Journal of Applied Physics   Vol. 94 ( 2 ) page: 916-920   2003.7

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  437. Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals

    Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Matsui, T. Ujihara, K. Fujiwara, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 254   page: 188-195   2003.6

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  438. Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature

    Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Murakami and K. Nakajima

    Journal of Crystal Growth   Vol. 250   page: 298-304   2003.4

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  439. In-plane orientation and polarity of ZnO epitaxial films on As-polished sapphire (alpha-Al2O3) (0001) substrates grown by metal organic chemical vapor deposition

    B. P. Zhang, L. Manh, K. Wakatsuki, K. Tamura, T. Ohnishi, M. Lippma, N. Usami, M. Kawasaki, H. Koinuma and Y. Segawa

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 42 ( 3B ) page: L264-L266   2003.3

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  440. High-quality crystalline silicon layer grown by liquid phase epitaxy method at low growth temperature

    T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 42 ( 3A ) page: L217-L219   2003.3

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  441. Fabrication of SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate

    K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, B. P. Zhang, Y. Segawa and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 42 ( 3A ) page: L232-L234   2003.3

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  442. Epitaxial growth and polarity of ZnO films on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition

    B. P. Zhang, L. H. Manh, K. Wakatsuki, T. Ohnishi, M. Lippmaa, N. Usami, M. Kawasaki and Y. Segawa

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 42   page: 2291-2295   2003

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  443. Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures

    K. Sawano, K. Arimoto, Y. Hirose, S. Koh, N. Usami, K. Nakagawa, T. Hattori and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 251 ( 1-4 ) page: 693-696   2003

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  444. 3D atomic imaging of SiGe system by X-ray fluorescence holography

    K. Hayashi, Y. Takahashi, E. Matsubara, K. Nakajima and N. Usami

    J. Materials Science: Materials in Electronics   Vol. 14   page: 459-462   2003

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  445. Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution

    N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami and K. Nakajima

    Journal of Applied Physics   Vol. 92 ( 12 ) page: 7098-7101   2002.12

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  446. In situ observations of crystal growth behavior of silicon melt

    K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa and S. Mizoguchi

    Journal of Crystal Growth   Vol. 243 ( 2 ) page: 275-282   2002.8

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  447. Evidence of the presence of built-in strain in multicrystalline SiGe with large compositional distribution

    N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 41 ( 7A ) page: 4462-4465   2002.7

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  448. Simultaneous in situ measurement of solute and temperature distributions in the alloy solutions

    T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 242   page: 313-320   2002.7

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  449. Preparation of a TiO2 film coated Si device for photo-decomposition of water by CVD method using Ti(OPri)(4)

    N. Sato, K. Nakajima, N. Usami, H. Takahashi, A. Muramatsu and E. Matsubara

    Materials Transactions   Vol. 43 ( 7 ) page: 1533-1536   2002.7

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  450. Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells

    K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido

    Solar Energy Materials and Solar Cells   Vol. 73 ( 3 ) page: 305-320   2002.7

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  451. New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law

    T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 241 ( 3 ) page: 387-394   2002.6

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  452. Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals

    K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki and T. Shishido

    Journal of Crystal Growth   Vol. 240   page: 373-381   2002.5

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  453. Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications

    K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido

    Solar Energy Materials and Solar Cells   Vol. 72   page: 93-100   2002.4

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  454. In-situ monitoring system of the position and temperature at the crystal-solution interface

    G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami and K. Nakajima

    Journal of Crystal Growth   Vol. 236   page: 125-131   2002.3

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  455. Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution

    N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, H. Yaguchi, Y. Murakami and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 41 ( 1AB ) page: L37-L39   2002.1

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  456. In situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity

    G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, K. Fujiwara, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 234   page: 516-522   2002.1

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  457. Raman scattering and x-ray absorption studies of Ge-Si nanocrystallization

    A. Kolobov, H. Oyanagi, N. Usami, S. Tokumitsu, T. Hattori, S. Yamasaki, K. Tanaka, S. Ohtake and Y. Shiraki

    Applied Physics Letters   Vol. 80 ( 3 ) page: 488-490   2002.1

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  458. Effect of Si diffusion on growth, parameters and photoluminescence of GeSi/Si(001) self-assembled islands

    M. Y. Valakh, N. V. Vostokov, S. A. Gusev, Y. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov, M. V. Stepikhova, N. Usami, Y. Shiraki and V. A. Yukhymchuk

    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA   Vol. 66   page: 161-164   2002

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  459. Evaluation of the diffusion coefficients in liquid GaGe binary alloys using a novel method based on Fick's first law

    T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima

    JOURNAL OF NON-CRYSTALLINE SOLIDS   Vol. 312   page: 196-202   2002

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  460. Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami and K. Nakajima

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   Vol. 89   page: 364-367   2002

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  461. Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands

    A. V. Novikov, B. A. Andreev, N. V. Vostokov, Y. N. Drozdov, Z. F. Krasilnik, D. N. Lobanov, L. D. Moldavskaya, A. N. Yablonskiy, M. Miura, N. Usami, Y. Shiraki, M. Y. Valakh, N. Mestres and J. Pascual

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   Vol. 89   page: 62-65   2002

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  462. Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K. Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa and S. Kodama

    Semiconductor Science and Technology   Vol. 16 ( 8 ) page: 699-703   2001.8

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  463. Physical model for the evaluation of solid-liquid interfacial tension in silicon

    T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami and K. Nakajima

    Journal of Applied Physics   Vol. 90 ( 2 ) page: 750-755   2001.7

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  464. Fabrication of strain-balanced Si/Si1-xGex multiple quantum wells on Si1-yGey virtual substrates and their optical properties

    K. Kawaguchi, Y. Shiraki, N. Usami, J. Zhang, N. J. Woods, G. Breton and G. Parry

    Applied Physics Letters   Vol. 79 ( 3 ) page: 344-346   2001.7

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  465. Growth of SixGe1-x (x=0.15) bulk crystal with uniform composition utilizing in situ monitoring of the crystal-solution interface

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 40 ( 6A ) page: 4141-4144   2001.6

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  466. Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt inter-face using in situ monitoring system

    Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara and K. Nakajima

    Journal of Crystal Growth   Vol. 224   page: 204-211   2001.4

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  467. The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures

    N. V. Vostokov, S. A. Gusev, Y. N. Drozdov, Z. F. Krasilnik, D. N. Lobanov, N. Mesters, M. Miura, L. D. Moldavskaya, A. V. Novikov, J. Pascual, V. V. Postnikov, Y. Shiraki, V. A. Uakhimchuk, N. Usami and M. Y. Valakh

    PHYSICS OF LOW-DIMENSIONAL STRUCTURES   Vol. 41337   page: 295-301   2001

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  468. Modification of the growth mode of Ge on Si(100) in the presence of buried Ge islands

    N. Usami, M. Miura, Y. Ito, Y. Araki, K. Nakajima and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 227   page: 782-785   2001

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  469. Observation of negatively charged excitons and excited states of multi-excitons in quantum dots embedded in modulation doping structures

    K. Ohdaira, N. Usami, K. Ota and Y. Shiraki

    PHYSICA E   Vol. 11 ( 2-3 ) page: 68-71   2001

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  470. Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies

    K. Nakajima, T. Ujihara, G. Sazaki and N. Usami

    Journal of Crystal Growth   Vol. 220 ( 4 ) page: 413-424   2000.12

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  471. SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, S. Koh, Y. Shiraki, B. Zhang, Y. Segawa and S. Kodama

    Applied Physics Letters   Vol. 77 ( 22 ) page: 3565-3567   2000.11

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  472. In situ measurement of composition in high-temperature solutions by X-ray fluorescence spectrometry

    T. Ujihara, G. Sazaki, S. Miyashita, N. Usami and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 39 ( 10 ) page: 5981-5982   2000.10

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  473. Drastic increase of the density of Ge islands by capping with a thin Si layer

    N. Usami, M. Miura, Y. Ito, Y. Araki and Y. Shiraki

    Applied Physics Letters   Vol. 77 ( 2 ) page: 217-219   2000.7

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  474. Modification of the growth mode of Ge on Si by buried Ge islands

    N. Usami, Y. Araki, Y. Ito, M. Miura and Y. Shiraki

    Applied Physics Letters   Vol. 76 ( 25 ) page: 3723-3725   2000.6

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  475. Optical investigation of modified Stranski-Krastanov growth mode in the stacking of self-assembled Ge islands

    N. Usami and Y. Shiraki

    THIN SOLID FILMS   Vol. 369   page: 108-111   2000

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  476. Microscopic probing of localized excitons in quantum wells

    N. Usami, K. Ota, K. Ohdaira, Y. Shiraki, T. Hasche, V. Lyssenko and K. Leo

    INSTITUTE OF PHYSICS CONFERENCE SERIES   ( 166 ) page: 99-102   2000

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  477. Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer

    H. Takamiya, M. Miura, N. Usami, T. Hattori and Y. Shiraki

    THIN SOLID FILMS   Vol. 369 ( 1-2 ) page: 84-87   2000

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  478. Growth and characterization of Ge-70(n)/Ge-74(n) isotope superlattices

    K. Morita, K. M. Itoh, J. Muto, K. Mizoguchi, N. Usami, Y. Shiraki and E. E. Haller

    THIN SOLID FILMS   Vol. 369 ( 1-2 ) page: 405-408   2000

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  479. Formation of relaxed SiGe films on Si by selective epitaxial growth

    K. Kawaguchi, N. Usami and Y. Shiraki

    Thin Solid Films   Vol. 369   page: 126-129   2000

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  480. Correlation between electronic states and optical properties in indirect GaAsP/GaP quantum wells with insertion of an ultrathin AlP layer

    K. Arimoto, N. Usami and Y. Shiraki

    Physica E   Vol. 8   page: 323-327   2000

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  481. Effect of the insertion of an ultrathin AlP layer on the optical properties of GaAsP/GaP quantum wells

    K. Arimoto, T. Sugita, N. Usami and Y. Shiraki

    Physical Review B   Vol. 60 ( 19 ) page: 13735-13739   1999.11

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  482. Magnetophotoluminescence spectroscopy of AlGaP-based neighboring confinement structures

    N. Usami, T. Sugita, T. Ohta, F. Issiki, Y. Shiraki, K. Uchida and N. Miura

    Physical Review B   Vol. 60 ( 3 ) page: 1879-1883   1999.7

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  483. Study of a pure-Ge/Si short-period superlattice by x-ray double crystal diffraction

    Z. G. Ji, H. M. Lu, S. G. Zhang, D. L. Que, N. Usami, H. Sunamura and Y. Shiraki

    Journal of Materials Synthesis and Processing   Vol. 7 ( 3 ) page: 205-207   1999.5

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  484. Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy

    E. S. Kim, N. Usami and Y. Shiraki

    Semiconductor Science and Technology   Vol. 14 ( 3 ) page: 257-265   1999.3

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  485. Optical characterization of strain-induced structural modification in SiGe-based heterostructures

    N. Usami, K. Leo and Y. Shiraki

    Journal of Applied Physics   Vol. 85 ( 4 ) page: 2363-2366   1999.2

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  486. Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications

    L. K. Bera, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti

    Journal of Electronic Materials   Vol. 28 ( 2 ) page: 98-104   1999.2

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  487. Photoluminescence study of InP/GaP highly strained quantum wells

    T. Kimura, H. Yaguchi, N. Usami, K. Onabe and Y. Shiraki

    INSTITUTE OF PHYSICS CONFERENCE SERIES   Vol. 162   page: 511-516   1999

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  488. Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy

    S. J. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki and R. Ito

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 37 ( 12B ) page: L1493-L1496   1998.12

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  489. Epitaxial growth and photoluminescence of Si/pure-Ge/Si quantum structures on Si(311) substrates

    K. Amano, M. Kobayashi, A. Ohga, T. Hattori, N. Usami and Y. Shiraki

    Semiconductor Science and Technology   Vol. 13 ( 11 ) page: 1277-1283   1998.11

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  490. Wavy interface morphologies in strained Si1-xGex/Si multilayers on vicinal Si(111) substrates

    J. H. Li, Y. Yamaguchi, H. Hashizume, N. Usami and Y. Shiraki

    Journal of Physics-Condensed Matter   Vol. 10 ( 39 ) page: 8643-8652   1998.10

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  491. Photoluminescence and Raman scattering of pure germanium/silicon short period superlattice

    Z. G. Ji, N. Usami, H. Sunamura and Y. Shiraki

    Acta Physica Sinica-Overseas Edition   Vol. 7 ( 8 ) page: 608-612   1998.8

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  492. Electrical properties of N2O/NH3 plasma grown oxynitride on strained-Si

    L. K. Bera, S. K. Ray, M. Mukhopadhyay, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti

    Ieee Electron Device Letters   Vol. 19 ( 8 ) page: 273-275   1998.8

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  493. Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties

    E. S. Kim, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 72   page: 1617-1619   1998.3

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  494. In-plane potential modulation in tensilely strained AlGaP-based neighboring confinement structure

    N. Usami, T. Sugita, T. Ohta, H. Ito, K. Uchida, Y. Shiraki, F. Minami and N. Miura

    PHYSICA E   Vol. 2   page: 883-886   1998

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  495. Control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells and selective epitaxy on patterned substrates

    N. Usami, J. Arai, E. S. Kim, K. Ota, T. Hattori and Y. Shiraki

    PHYSICA E   Vol. 2   page: 137-141   1998

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  496. Photoluminescence from pure-Ge/pure-Si neighboring confinement structure

    N. Usami, M. Miura, H. Sunamura and Y. Shiraki

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 16   page: 1710-1712   1998

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  497. Exciton diffusion dynamics in quantum nanostructures on V-groove patterned substrates

    N. Usami, Y. Shiraki, W. Pan, H. Yaguchi and K. Onabe

    Superlattices and Microstructures   Vol. 23 ( 2 ) page: 395-400   1998

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  498. Magneto-photoluminescence spectra of GaP/AlP short-period superlattices in high magnetic fields and uniaxial pressures

    K. Uchida, N. Miura, T. Sugita, F. Issiki, N. Usami and Y. Shiraki

    PHYSICA B   Vol. 251   page: 909-913   1998

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  499. Enhanced no-phonon transition in indirect GaAsP/GaP quantum wells by insertion of monolayer AlP for electron localization

    T. Sugita, N. Usami and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 188 ( 1-4 ) page: 323-327   1998

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  500. New strain-relieving microstructure in pure-Ge/Si short-period superlattices

    H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 16 ( 3 ) page: 1595-1598   1998

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  501. Temperature dependence of microscopic photoluminescence spectra of quantum dots and quantum wells

    K. Ota, N. Usami and Y. Shiraki

    PHYSICA E   Vol. 2 ( 1-4 ) page: 573-577   1998

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  502. Effect of tensile strain on optical properties of AlGaP-based neighboring confinement structure

    T. Ohta, N. Usami, F. Issiki and Y. Shiraki

    Superlattices and Microstructures   Vol. 23 ( 1 ) page: 97-102   1998

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  503. Spectroscopic study of Si-based quantum wells with neighbouring confinement structure

    N. Usami, Y. Shiraki and S. Fukatsu

    Semiconductor Science and Technology   Vol. 12 ( 12 ) page: 1596-1602   1997.12

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  504. Optical investigation of growth mode of Ge thin films on Si(110) substrates

    J. Arai, A. Ohga, T. Hattori, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 71 ( 6 ) page: 785-787   1997.8

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  505. Effects of tensile strain on the optical properties of an AlGaP-based neighbouring confinement structure

    T. Ohta, N. Usami, F. Issiki and Y. Shiraki

    Semiconductor Science and Technology   Vol. 12 ( 7 ) page: 881-887   1997.7

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  506. Interfacial roughness of Si1-xGex/Si multilayer structures on Si(111) probed by x-ray scattering

    P. M. Reimer, J. H. Li, Y. Yamaguchi, O. Sakata, H. Hashizume, N. Usami and Y. Shiraki

    Journal of Physics-Condensed Matter   Vol. 9 ( 22 ) page: 4521-4533   1997.6

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  507. Precise control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells

    J. Arai, N. Usami, K. Ota, Y. Shiraki, A. Ohga and T. Hattori

    Applied Physics Letters   Vol. 70 ( 22 ) page: 2981-2983   1997.6

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  508. Photoluminescence study of the optical properties of SiGe quantum wells on separation by implanted oxygen substrates

    D. K. Nayak, N. Usami, S. Fukatsu and Y. Shiraki

    Journal of Applied Physics   Vol. 81 ( 8 ) page: 3484-3489   1997.4

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  509. Anomalous luminescence peak shift of SiGe/Si quantum well induced by self-assembled Ge islands

    E. S. Kim, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 70 ( 3 ) page: 295-297   1997.1

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  510. Oxidation of strained Si in a microwave electron cyclotron resonance plasma

    L. K. Bera, M. Mukhopadhyay, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti

    Applied Physics Letters   Vol. 70 ( 2 ) page: 217-219   1997.1

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  511. Electrical properties of oxides grown on strained Si using microwave N2O plasma

    L. K. Bera, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti

    Applied Physics Letters   Vol. 70 ( 1 ) page: 66-68   1997.1

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  512. Anomalous photoluminescence of pure-Ge/Si type-II coupled quantum wells (II-CQWs)

    H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu

    THIN SOLID FILMS   Vol. 294 ( 1-2 ) page: 336-339   1997

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  513. Luminescence study on Ge islands as stressors on Si1-xGex/Si quantum well

    E. S. Kim, N. Usami, H. Sunamura, S. Fukatsu and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 175   page: 519-523   1997

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  514. Time-resolved photoluminescence study on AlxGa1-xAs spontaneous vertical quantum well structures

    N. Usami, W. G. Pan, H. Yaguchi, R. Ito, K. Onabe, H. Akiyama and Y. Shiraki

    Applied Physics Letters   Vol. 68 ( 23 ) page: 3221-3223   1996.6

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  515. Ultrashort lifetime photocarriers in Ge thin films

    N. Sekine, K. Hirakawa, F. Sogawa, Y. Arakawa, N. Usami, Y. Shiraki and T. Katoda

    Applied Physics Letters   Vol. 68 ( 24 ) page: 3419-3421   1996.6

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  516. Role of heterointerface on enhancement of no-phonon luminescence in Si-based neighboring confinement structure

    N. Usami, Y. Shiraki and S. Fukatsu

    Applied Physics Letters   Vol. 68 ( 17 ) page: 2340-2342   1996.4

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  517. Observation of lateral confinement effect in Ge quantum wires self-aligned at step edges on Si(100)

    H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu

    Applied Physics Letters   Vol. 68 ( 13 ) page: 1847-1849   1996.3

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  518. Exciton diffusion dynamics in SiGe/Si quantum wells on a V-groove patterned Si substrate

    N. Usami, H. Akiyama, Y. Shiraki and S. Fukatsu

    SOLID-STATE ELECTRONICS   Vol. 40   page: 733-736   1996

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  519. Formation and optical properties of SiGe/Si quantum structures

    Y. Shiraki, H. Sunamura, N. Usami and S. Fukatsu

    APPLIED SURFACE SCIENCE   Vol. 102   page: 263-271   1996

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  520. Polarization properties of GaAsP/AlGaAs tensilely strained quantum wire structures grown on V-grooved GaAs substrates

    W. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and Y. Shiraki

    INSTITUTE OF PHYSICS CONFERENCE SERIES   Vol. 145   page: 925-930   1996

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  521. Rectangular AlGaAs/AlAs quantum wires using spontaneous vertical quantum wells

    W. G. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and Y. Shiraki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 35 ( 2B ) page: 1214-1216   1996

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  522. Improved luminescence quality with an asymmetric confinement potential in Si-based type-II quantum wells grown on a graded SiGe relaxed buffer

    S. Fukatsu, N. Usami and Y. Shiraki

    J. Vac. Sci. Technol   Vol. 14   page: 2387-2390   1996

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  523. CHARACTERIZATION OF SIGE QUANTUM-WIRE STRUCTURES BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY

    V. Higgs, E. C. Lightowlers, N. Usami, T. Mine, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 67 ( 12 ) page: 1709-1711   1995.9

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  524. DYNAMICS OF EXCITON DIFFUSION IN SIGE QUANTUM-WELLS ON A V-GROOVE PATTERNED SI SUBSTRATE

    N. Usami, H. Akiyama, Y. Shiraki and S. Fukatsu

    Physical Review B   Vol. 52 ( 7 ) page: 5132-5135   1995.8

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  525. ENHANCEMENT OF RADIATIVE RECOMBINATION IN SI-BASED QUANTUM-WELLS WITH NEIGHBORING CONFINEMENT STRUCTURE

    N. Usami, F. Issiki, D. K. Nayak, Y. Shiraki and S. Fukatsu

    Applied Physics Letters   Vol. 67   page: 524-526   1995.7

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  526. ISLAND FORMATION DURING GROWTH OF GE ON SI(100) - A STUDY USING PHOTOLUMINESCENCE SPECTROSCOPY

    H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu

    Applied Physics Letters   Vol. 66 ( 22 ) page: 3024-3026   1995.5

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  527. STRAIN-INDUCED LATERAL BAND-GAP MODULATION IN SI1-XGEX/SI QUANTUM-WELL AND QUANTUM-WIRE STRUCTURES

    N. Usami, H. Sunamura, T. Mine, S. Fukatsu and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 150   page: 1065-1069   1995

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  528. Intense photoluminescence from Si-based quantum well structures with neighboring confinement structure

    N. Usami, Y. Shiraki and S. Fukatsu

    JOURNAL OF CRYSTAL GROWTH   Vol. 157   page: 27-30   1995

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  529. Photoluminescence investigation on growth mode changeover of Ge on Si(100)

    H. Sunamura, S. Fukatsu, N. Usami and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 157 ( 1-4 ) page: 265-269   1995

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  530. Anomalous spectral shift of photoluminescence from MBE-grown strained Si1-xGex/Si quantum wells mediated by atomic hydrogen

    G. Ohta, S. Fukatsu, N. Usami, Y. Shiraki and T. Hattori

    JOURNAL OF CRYSTAL GROWTH   Vol. 157 ( 1-4 ) page: 36-39   1995

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  531. Field-driven blue shift of excitonic photoluminescence in Si-Ge quantum wells and superlattices

    J. Y. Kim, S. Fukatsu, N. Usami and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 157 ( 1-4 ) page: 40-44   1995

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  532. CRUCIAL ROLE OF SI BUFFER LAYER QUALITY IN THE PHOTOLUMINESCENCE EFFICIENCY OF STRAINED SI1-XGEX/SI QUANTUM-WELLS

    T. Mine, N. Usami, Y. Shiraki and S. Fukatsu

    J. Cryst. Growth   Vol. 150 ( 1-4 ) page: 1033-1037   1995

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  533. CATHODOLUMINESCENCE INVESTIGATION OF SIGE QUANTUM WIRES FABRICATED ON V-GROOVE PATTERNED SI SUBSTRATES

    V. Higgs, E. C. Lightowlers, N. Usami, Y. Shiraki, T. Mine and S. Fukatsu

    J. Cryst. Growth   Vol. 150   page: 1070-1073   1995

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  534. ABRUPT SI GE INTERFACE FORMATION USING ATOMIC-HYDROGEN IN SI MOLECULAR-BEAM EPITAXY

    G. Ohta, S. Fukatsu, Y. Ebuchi, T. Hattori, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 65 ( 23 ) page: 2975-2977   1994.12

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  535. PHOTOLUMINESCENCE OF SI/SIGE/SI QUANTUM-WELLS ON SEPARATION BY OXYGEN IMPLANTATION SUBSTRATE

    D. K. Nayak, N. Usami, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 64 ( 18 ) page: 2373-2375   1994.5

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  536. OPTICAL ANISOTROPY IN WIRE-GEOMETRY SIGE LAYERS GROWN BY GAS-SOURCE SELECTIVE EPITAXIAL-GROWTH TECHNIQUE

    N. Usami, T. Mine, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 64 ( 9 ) page: 1126-1128   1994.2

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  537. FABRICATION OF SIGE/SI QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

    N. Usami, T. Mine, S. Fukatsu and Y. Shiraki

    SOLID-STATE ELECTRONICS   Vol. 37   page: 539-541   1994

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  538. PHOTOLUMINESCENCE OF SI1-XGEX/SI QUANTUM-WELLS WITH ABRUPT INTERFACES FORMED BY SEGREGANT-ASSISTED GROWTH

    N. Usami, S. Fukatsu and Y. Shiraki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 33 ( 4B ) page: 2304-2306   1994

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  539. OPTICAL-DETECTION OF INTERDIFFUSION IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES

    H. Sunamura, S. Fukatsu, N. Usami and Y. Shiraki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 33 ( 4B ) page: 2344-2347   1994

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  540. BAND-EDGE PHOTOLUMINESCENCE OF SIGE/STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)

    D. K. Nayak, N. Usami, H. Sunamura, S. Fukatsu and Y. Shiraki

    SOLID-STATE ELECTRONICS   Vol. 37 ( 4-6 ) page: 933-936   1994

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  541. A SI1-XGEX/SI SINGLE-QUANTUM-WELL P-I-N STRUCTURE GROWN BY SOLID-SOURCE AND GAS-SOURCE HYBRID SI MOLECULAR-BEAM EPITAXY

    Y. Kato, S. Fukatsu, N. Usami and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 136   page: 355-360   1994

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  542. GAS-SOURCE MOLECULAR-BEAM EPITAXY AND LUMINESCENCE CHARACTERIZATION OF STRAINED SI1-XGEX/SI QUANTUM-WELLS

    S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori and K. Okumura

    J. Cryst. Growth   Vol. 136   page: 315-321   1994

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  543. BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)

    D. K. Nayak, N. Usami, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 25 ) page: 3509-3511   1993.12

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  544. REALIZATION OF CRESCENT-SHAPED SIGE QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

    N. Usami, T. Mine, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 20 ) page: 2789-2791   1993.11

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  545. BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI SIGE TYPE-II QUANTUM-WELLS ON SI(100)

    D. K. Nayak, N. Usami, H. Sunamura, S. Fukatsu and Y. Shiraki

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 32 ( 10A ) page: L1391-L1393   1993.10

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  546. SELF-MODULATING SB INCORPORATION IN SI/SIGE SUPERLATTICES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

    K. Fujita, S. Fukatsu, N. Usami, Y. Shiraki, H. Yaguchi, R. Ito and K. Nakagawa

    Surface Science   Vol. 295 ( 3 ) page: 335-339   1993.10

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  547. LUMINESCENCE STUDY ON INTERDIFFUSION IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

    H. Sunamura, S. Fukatsu, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 12 ) page: 1651-1653   1993.9

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  548. HYBRID SI MOLECULAR-BEAM EPITAXIAL REGROWTH FOR A STRAINED SI1-XGEX/SI SINGLE-QUANTUM-WELL ELECTROLUMINESCENT DEVICE

    Y. Kato, S. Fukatsu, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 17 ) page: 2414-2416   1993.8

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  549. HIGH-TEMPERATURE OPERATION OF STRAINED SI0.65GE0.35/SI(111) P-TYPE MULTIPLE-QUANTUM-WELL LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami, Y. Shiraki, A. Nishida and K. Nakagawa

    Applied Physics Letters   Vol. 63 ( 7 ) page: 967-969   1993.8

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  550. ABRUPT COMPOSITIONAL TRANSITION IN LUMINESCENT SI1-XGEX/SI QUANTUM-WELL STRUCTURES FABRICATED BY SEGREGANT ASSISTED GROWTH USING SB ADLAYER

    N. Usami, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 3 ) page: 388-390   1993.7

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  551. DISLOCATION GLIDE MOTION IN HETEROEPITAXIAL THIN-FILMS OF SI1-XGEX/SI(100)

    Y. Yamashita, K. Maeda, K. Fujita, N. Usami, K. Suzuki, S. Fukatsu, Y. Mera and Y. Shiraki

    Philosophical Magazine Letters   Vol. 67 ( 3 ) page: 165-171   1993.3

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  552. IS LOW-TEMPERATURE GROWTH THE SOLUTION TO ABRUPT SI/SI1-XGEX INTERFACE FORMATION

    S. Fukatsu, N. Usami, K. Fujita, H. Yaguchi, Y. Shiraki and R. Ito

    J. Cryst. Growth   Vol. 127   page: 401-405   1993

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  553. INTENSE PHOTOLUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES

    S. Fukatsu, N. Usami, H. Yoshida, A. Fujiwara, Y. Takahashi, Y. Shiraki and R. Ito

    J. Cryst. Growth   Vol. 127   page: 489-493   1993

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  554. OBSERVATION OF ELECTROLUMINESCENCE ABOVE ROOM-TEMPERATURE IN STRAINED P-TYPE SI0.65GE0.35/SI(111) MULTIPLE-QUANTUM WELLS

    S. Fukatsu, N. Usami, Y. Shiraki, A. Nishida and K. Nakagawa

    J. Cryst. Growth   Vol. 127   page: 1083-1087   1993

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  555. LUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami and Y. Shiraki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 32 ( 3B ) page: 1502-1507   1993

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  556. LUMINESCENCE FROM SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami and Y. Shiraki

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 11 ( 3 ) page: 895-898   1993

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  557. PHOTOGENERATION AND TRANSPORT OF CARRIERS IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES

    S. Fukatsu, N. Usami and Y. Shiraki

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 31 ( 11A ) page: L1525-L1528   1992.11

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    Language:English   Publishing type:Research paper (scientific journal)  

  558. QUANTUM SIZE EFFECT OF EXCITONIC BAND-EDGE LUMINESCENCE IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELL STRUCTURES GROWN BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, H. Yoshida, N. Usami, A. Fujiwara, Y. Takahashi, Y. Shiraki and R. Ito

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 31 ( 9B ) page: L1319-L1321   1992.9

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    Language:English   Publishing type:Research paper (scientific journal)  

  559. OBSERVATION OF DEEP-LEVEL-FREE BAND EDGE LUMINESCENCE AND QUANTUM CONFINEMENT IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELL STRUCTURES GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY

    N. Usami, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 61 ( 14 ) page: 1706-1708   1992.8

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    Language:English   Publishing type:Research paper (scientific journal)  

  560. ELECTROLUMINESCENCE FROM STRAINED SIGE/SI QUANTUM-WELL STRUCTURES GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida and K. Nakagawa

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 31 ( 8A ) page: L1015-L1017   1992.8

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  561. BAND-EDGE LUMINESCENCE OF STRAINED SIXGE1-X/SI SINGLE QUANTUM-WELL STRUCTURES GROWN ON SI(111) BY SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami and Y. Shiraki

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 31 ( 8A ) page: L1018-L1020   1992.8

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  562. SYSTEMATIC BLUE SHIFT OF EXCITON LUMINESCENCE IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES GROWN BY GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY

    S. Fukatsu, H. Yoshida, N. Usami, A. Fujiwara, Y. Takahashi, Y. Shiraki and R. Ito

    THIN SOLID FILMS   Vol. 222   1992

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/0040-6090(92)90025-7

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Books 18

  1. 多結晶材料情報学

    宇佐美徳隆、大野裕、沓掛健太朗、工藤博章、小島拓人、横井達矢( Role: Joint author)

    共立出版  2024.5 

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    Language:Japanese Book type:Scholarly book

  2. カーボンニュートラルへの化学工学

    ( Role: Joint author)

    丸善出版  2023.1  ( ISBN:978-4-621-30772-4

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    Total pages:256   Language:Japanese

  3. ハイドロジェノミクス

    後藤 和泰、宇佐美 徳隆( Role: Joint author ,  4.2 水素ドープ太陽電池)

    共立出版  2022.1  ( ISBN:978-4-320-04498-2

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    Language:Japanese

  4. 脱炭素への工学 Reviewed

    宇佐美 徳隆( Role: Joint author ,  第3章3.1 太陽電池の技術動向 )

    三恵社  2021.12  ( ISBN:978-4-86693-542-3

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    Total pages:263   Responsible for pages:12   Language:Japanese Book type:Scholarly book

  5. 太陽電池とLEDの原理

    Adrian Kitai著 宇佐美 徳隆 監訳( Role: Joint author)

    丸善  2013.7 

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    Language:Japanese

  6. 太陽電池技術ハンドブック 4.2.3 シリコン多結晶の欠陥・組織と評価

    宇佐美 徳隆( Role: Joint author)

    オーム社  2013.5 

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    Language:Japanese

  7. "第2章第3節 SiGe量子ドット系", "量子ドット太陽電池の最前線"

    豊田太郎(監修)( Role: Joint author)

    シーエムシー出版  2012 

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    Language:Japanese

  8. "Chapter 4. Types of silicon-germanium (SiGe) bulk crystal growth methods and their applications" in "SiGe nanostructures: materials science, technology and applications"

    edited by Y. Shiraki, and N. Usami( Role: Joint author)

    Woodhead publishing  2011 

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    Language:English

  9. "第3編第2章 太陽電池の基礎知識", "スマートハウスの発電・蓄電・給電技術の最前線"

    田路 和幸 (監修) ( Role: Joint author)

    シーエムシー出版  2011 

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    Language:Japanese

  10. "第1章第4節 SiGe量子ドットのエピタキシャル成長", "量子ドットエレクトロニクスの最前線"

    荒川泰彦 他41名( Role: Joint author)

    NTS社  2011 

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    Language:Japanese

  11. 太陽電池の基礎と応用 シリコン太陽電池

    宇佐美 徳隆( Role: Joint author)

    培風館  2010.7 

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    Language:Japanese

  12. 「太陽電池の物理」

    Peter Würfel 著、宇佐美 徳隆、石原 照也、中嶋 一雄監訳( Role: Joint author)

    丸善  2010 

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    Language:Japanese

  13. "Chapter 6. Fundamental understanding of subgrain boundaries" in "Advances in Materials Research 14, Crystal Growth of Si for Solar Cells"

    Edited by K. Nakajima, and N. Usami( Role: Joint author)

    Springer  2009 

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    Language:English

  14. "Chapter 10. High-quality Si multicrystals with same grain orientation and large grain size by the new dendritic casting method for high-efficiency soalr cell applications" in "Advances in Materials Research 10, Frontiers in Materials Research"

    Edited by Y. Fujikawa, K. Nakajima, and T. Sakurai( Role: Joint author)

    Springer  2008 

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    Language:English

  15. "Chaper 12. Floating cast method as a new growth method of silicon bulk multicrystals for solar cells" in "Advances in Materials Research 10, Frontiers in Materials Research"

    Edited by Y. Fujikawa, K. Nakajima, and T. Sakurai( Role: Joint author)

    Springer  2008 

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    Language:English

  16. "Chapter 11. Growth of high-quality polycrystalline Si ingot with same grain orientation using dendritic casting method" in "Advances in Materials Research 10, Frontiers in Materials Research"

    Edited by Y. Fujikawa, K. Nakajima, and T. Sakurai( Role: Joint author)

    Springer  2008 

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    Language:English

  17. "III/34C3. Single and coupled quantum wells:SiGe" in "Landolt-Börnstein New Series"

    Edited by E. Kasper and C. Klingshirn( Role: Joint author)

    Springer  2007 

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    Language:English

  18. "Chapter 6.6. SiGe quantum structures" in "Mesoscopic Physics and Electronics"

    Edited by T. Ando, Y. Arakawa, K. Furuya, S. Komiyama, and S. Nakashima( Role: Joint author)

    Springer-Verlag  1998 

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    Language:English

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MISC 4

  1. Pioneering Multicrystalline Informatics

    Noritaka USAMI

    JSAP Review     2024.1

  2. 多結晶材料情報学の開拓 Reviewed

    宇佐美徳隆

    応用物理   Vol. 92 ( 11 ) page: 662 - 667   2023.11

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    Language:Japanese  

    DOI: https://doi.org/10.11470/oubutsu.92.11_662

  3. 太陽電池の高性能化に向けたヘテロ界面制御 Invited Reviewed

    後藤和泰、宇佐美徳隆

    表面と真空   Vol. 66   page: 86 - 90   2023.1

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    Authorship:Last author   Language:Japanese  

    DOI: 10.1380/vss.66.86

  4. 太陽光発電へのインフォマティクス応用 Invited International coauthorship

    宇佐美 徳隆

    太陽光発電協会会誌     2021.4

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (other)  

Presentations 840

  1. Interface and Surface Control for High Performance of Heterojunction Solar Cells Invited

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    Event date: 2024.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  2. 酸化チタンを正孔・電子コンタクトに用いた結晶シリコン太陽電池

    松井 卓矢、深谷 昌平、McNab Shona、齋 均、後藤 和泰、宇佐美 徳隆、Bonilla Ruy Sebastian

    第85回応用物理学会秋季学術講演会 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  3. φ50mmサイズMg2Si結晶の単結晶化機構の調査

    藤久 善司、木村 侑生、島野 航輔、坂根 駿也、劉 鑫、宇佐美 徳隆、鵜殿 治彦

    第85回応用物理学会秋季学術講演会 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  4. 結晶方位分布を考慮した機械学習による結晶欠陥発生予測

    鳥居 和馬、原 京花、沓掛 健太朗、工藤 博章、勝部 涼司、宇佐美 徳隆

    第85回応用物理学会秋季学術講演会 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  5. Mg2Si単結晶成長に及ぼす坩堝形状の影響

    朝倉 康太、劉 鑫、鵜殿 治彦、宇佐美 徳隆

    第85回応用物理学会秋季学術講演会 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  6. 機械学習を用いた光ヘテロダイン光熱変位信号からのSiの熱拡散率とキャリア寿命の推定

    浦野 翔大、原田 知季、沓掛 健太朗、宇佐美 徳隆、碇 哲雄、福山 敦彦

    第85回応用物理学会秋季学術講演会 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  7. GANを活用した擬似的な三次元多結晶Si組織の生成

    弟子丸 拓巳、沓掛 健太朗、工藤 博章、勝部 涼司、宇佐美 徳隆

    第85回応用物理学会秋季学術講演会 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  8. スクリーン印刷と焼成による厚いGe-rich領域を伴うSiGe薄膜のSi基板上へのエピタキシャル成長

    伊藤耕平, 今井 友貴, 宮本聡, 勝部 涼司, 鈴木紹太, 南山偉明, ダムリン マルワン, 宇佐美徳隆

    第85回応用物理学会秋季学術講演会 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  9. 光ヘテロダイン光熱変位法による人工的に制御したSi粒界構造の界面熱コンダクタンス測定

    原田 知季、沓掛 健太朗、宇佐美 徳隆、碇 哲雄、福山 敦彦

    第85回応用物理学会秋季学術講演会 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  10. 粒界ネットワーク解析を用いたAl2O3微小結晶球製造における凝固開始時のメカニズム解明

    池田 翔太郎、沓掛 健太朗、工藤 博章、勝部 涼司、宇佐美 徳隆

    第85回応用物理学会秋季学術講演会 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  11. ナノ結晶シリコン/酸化シリコン複合膜の電気的特性の組成依存性

    高木 香、荒田 朝基、黒川 康良、増田 淳、宇佐美 徳隆、後藤 和泰

    第85回応用物理学会秋季学術講演会 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  12. Scheil-Gulliver Model Studies on Al-paste-based SiGe Film Growth for on-silicon Multi-junction Solar Cells International conference

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  13. Fabrication of Planar Thermoelectric Generators using Phosphorus-doped Silicon Nanocrystals/Amorphous Silicon Composite Films International conference

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  14. Research and development of high-performance crystalline silicon solar cells and expansion to tandem cells Invited International conference

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    Event date: 2024.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  15. Liquid phase epitaxy of SiGe films using printing and firing International conference

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    Event date: 2024.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  16. 水素濃度を指標としたベイズ最適化を用いた多層パッシベーション膜の製膜条件探索

    近藤 蒼馬,黒川 康良,後藤 和泰,沓掛 健太朗,宇佐美 徳隆

    第21回「次世代の太陽光発電システム」シンポジウム (第4回日本太陽光発電学会学術講演会)  2024.7.11 

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    Event date: 2024.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  17. ナノ結晶シリコン/酸化シリコン複合膜の組成制御

    高木 香,荒田 朝基,黒川 康良,増田 淳,宇佐美 徳隆,後藤 和泰

    第21回「次世代の太陽光発電システム」シンポジウム (第4回日本太陽光発電学会学術講演会)  2024.7.11 

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    Event date: 2024.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  18. 太陽電池応用に向けたシリコンナノシートの作製

    大河内 創太,宮本 聡,加藤 慎也,宇佐美 徳隆,黒川 康良

    第21回「次世代の太陽光発電システム」シンポジウム (第4回日本太陽光発電学会学術講演会)  2024.7.11 

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    Event date: 2024.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  19. 異方性アルカリエッチングで結晶シリコン表面に形成したナノテクスチュアの均一性向上

    山口 大翔,黒川 康良,宇佐美 徳隆

    第21回「次世代の太陽光発電システム」シンポジウム (第4回日本太陽光発電学会学術講演会)  2024.7.11 

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    Event date: 2024.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  20. TiOx/結晶Si ヘテロ構造の実効少数キャリアライフタイムの温度依存性とそのパッシベーション機構

    道下 悠登,後藤 和泰,深谷 昌平,黒川 康良,宇佐美 徳隆

    第21回「次世代の太陽光発電システム」シンポジウム (第4回日本太陽光発電学会学術講演会)  2024.7.11 

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    Event date: 2024.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  21. シリコンナノ結晶/酸化シリコン複合膜におけるi-a-Si:H 層挿入によるブリスタリングの抑制

    水谷 和嗣,後藤 和泰,立花 福久,黒川 康良,宇佐美 徳隆

    第21回「次世代の太陽光発電システム」シンポジウム (第4回日本太陽光発電学会学術講演会)  2024.7.11 

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    Event date: 2024.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  22. 原子層堆積法により作製した酸化チタンへのNb 添加による電界効果パッシベーションの向上

    深谷 昌平,後藤 和泰,黒川 康良,宇佐美 徳隆

    第21回「次世代の太陽光発電システム」シンポジウム (第4回日本太陽光発電学会学術講演会)  2024.7.11 

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    Event date: 2024.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  23. PL イメージングを用いた擬単結晶Si インゴット内部の結晶欠陥解析

    廣野 秀貴,松尾 整,田辺 英義,宇佐美 徳隆

    第21回「次世代の太陽光発電システム」シンポジウム (第4回日本太陽光発電学会学術講演会)  2024.7.11 

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    Event date: 2024.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  24. 廃棄太陽光パネルから抽出したシリコンを用いた熱電変換Mg2Si 化合物の作製

    半澤 克道,加藤 慎也,楠本 倫大,山中 健吾,土居 大亮,黒川 康良,宇佐美 徳隆,伊藤 孝至

    第21回「次世代の太陽光発電システム」シンポジウム (第4回日本太陽光発電学会学術講演会)  2024.7.11 

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    Event date: 2024.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  25. シリコン酸化膜におけるシリコンナノ結晶の成長メカニズムの解明に向けた反応性力場分子動力学法による数値シミュレーション

    田村 玄汰, 上根 直也,後藤 和泰,宇佐美 徳隆,徳増 崇

    第21回「次世代の太陽光発電システム」シンポジウム (第4回日本太陽光発電学会学術講演会)  2024.7.12 

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    Event date: 2024.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  26. Multicrystalline informatics Invited International conference

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    Event date: 2024.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Germany  

  27. Fabrication and Performance Evaluation of Thermoelectric Mg2Si Compounds Synthesized Using Silicon Extracted from waste PV modules International conference

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    Event date: 2024.6 - 2024.7

    Language:English   Presentation type:Poster presentation  

    Country:Poland  

  28. Fabrication of tilted Mg2Si/Ni multilayer composite thermoelectric elements using PLA molds and power generation evaluation International conference

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    Event date: 2024.6 - 2024.7

    Language:English   Presentation type:Poster presentation  

    Country:Poland  

  29. Stress Analysis and Dislocation Cluster Generation in Silicon Crystal with Artificial Grain Boundaries International conference

    2024.6.25 

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    Event date: 2024.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  30. Enhancement of Near-infrared Light Absorption by Nanoimprinted Light Trapping Structure Implemented into Si Heterojunction Solar Cells International conference

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    Event date: 2024.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  31. Improvement for passivation performance of TiOx/SiOy/c-Si heterostructures by capping with Atomic-Layer-Deposited Nb doped TiOx Layer International conference

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    Event date: 2024.6

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  32. シリコンをモデルとした多結晶材料情報学の開拓と他材料への展開 Invited

    宇佐美徳隆

    低温工学・超電導学会材料研究会2024年度第1回シンポジウム  2024.6.7 

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    Event date: 2024.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  33. Multicrystalline informatics: A methodology to advance materials science by unraveling complex phenomena Invited International conference

    2024.5.30 

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    Event date: 2024.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:China  

  34. 多結晶Siの結晶成長における界面形状が応力に与える影響

    田近陽輝, 沓掛健太朗, 小島拓人, 劉鑫, 田中博之, 宇佐美徳隆

    第71回応用物理学会春季学術講演会  2024.3.22 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  35. 印刷とパルスレーザーアニールによるGe基板上へのGeSn薄膜成長

    佐藤剛志, 宮本聡, 鈴木紹太, 南山偉明, ダムリン マルワン, 宇佐美徳隆

    第71回応用物理学会春季学術講演会  2024.3.23 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  36. 印刷とパルスレーザーアニールによるSi基板上へのSiGe薄膜成長

    佐藤剛志, 宮本聡, 鈴木紹太, 南山偉明, ダムリン マルワン, 宇佐美徳隆

    第71回応用物理学会春季学術講演会  2024.3.23 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  37. 印刷と焼成によるSiGe 薄膜の液相成長メカニズム

    伊藤耕平, 宮本聡, 鈴木紹太, 南山偉明, ダムリン マルワン, 宇佐美徳隆

    第71回応用物理学会春季学術講演会  2024.3.23 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  38. Pドープ/Bドープ ナノ結晶Si/アモルファスSi複合薄膜の熱電デバイス応用

    柴田啓介, 加藤慎也, 黒澤昌志, 後藤和泰, 宮本聡, 伊藤孝至, 宇佐美徳隆, 黒川康良

    第71回応用物理学会春季学術講演会  2024.3.24 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  39. 反応性力場分子動力学法を用いたシリコン酸化膜中のシリコンナノ結晶形成プロセスの解析

    田村玄汰, 上根直也, 後藤和泰, 宇佐美徳隆, 徳増崇

    第71回応用物理学会春季学術講演会  2024.3.25 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京都市大学   Country:Japan  

  40. 原子層堆積法で作製したTiOx:Nb層の導入によるTiOx/SiOy/c-Siヘテロ構造のパッシベーション性能の向上

    深谷昌平, 後藤和泰, 黒川康良, 宇佐美徳隆

    第71回応用物理学会春季学術講演会  2024.3.24 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  41. CYTOP/BaTiO3ナノ粒子複合膜を用いた薄膜系直流水滴発電デバイス

    王海涛, 黒川康良, 王嘉, 宇佐美徳隆

    第71回応用物理学会春季学術講演会  2024.3.24 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  42. Multicrystalline informatics: A methodology to advance materials science by unraveling complex phenomena Invited International conference

    Noritaka Usami

    Colloquium at Department of Physics, City University of Hong Kong  2024.3.8  City University of Hong Kong

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    Event date: 2024.3

    Language:English  

    Country:Hong Kong  

  43. 名古屋大学におけるカーボンニュートラルに向けた取り組み Invited

    宇佐美 徳隆

    第三回カーボンニュートラルシンポジウム  2024.3.6 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:山形大学   Country:Japan  

  44. Challenges of Material Science for Realization of a Decarbonized Society Invited International conference

    N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Korea University   Country:Korea, Republic of  

  45. Effect of localized hydrogen on crystal tilting in strained SiGe substrates International conference

    Y. Yoneyama, S. Miyamoto, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  46. Nano-textured surfaces of c-Si suitable for perovskite/silicon tandem solar cells by anisotropic alkaline etching International conference

    H. Yamaguchi, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  47. 3D reconstruction of mono-like Si structure and analysis of dislocation clusters International conference

    H. Hirono, H. Matsuo, H. Tanabe, Y. Kurokawa, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  48. Fabrication and Performance Evaluation of Thermoelectric Mg2Si Compounds Synthesized Using Silicon Extracted from Discarded Solar Panels International conference

    K. Hanzawa, S. Kato, K. Yamanaka, T. Doi, Y. Kurokawa, N. Usami, T. Itoh

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  49. Investigation of the Influence of crucible geometry on the vertical Bridgman growth of Mg2Si single crystal by numerical simulation International conference

    K. Asakura, X. Liu, H. Udono, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  50. Wide-area quantum computation substrate evaluation using radio-frequency resonant circuits and gate-controlled Si devices International conference

    K. Masuda, S. Miyamoto, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  51. Stress analysis and dislocation cluster generation in multicrystalline Si with artificial drain boundaries International conference

    H. Tajika, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Korea University   Country:Korea, Republic of  

  52. Crystal growth of group IV mixed crystal thin films using screen-printing and pulse laser annealing International conference

    T. Sato, S. Suzuki, H. Minamiyama, M. Dhamrin, S. Miyamoto, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Korea University   Country:Korea, Republic of  

  53. Improvement of Passivation Performance of TiOx/SiOy/c-Si Heterostructure by Introducing an Atomic-Layer-Deposited TiOx:Nb Layer International conference

    S. Fukaya, K. Gotoh, Y. Kurokawa, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Korea University   Country:Korea, Republic of  

  54. Investigation of deposition conditions for multilayer passivation films ​using Bayesian optimization and hydrogen concentration grouping​ International conference

    S. Kondo, Y. Kurokawa, K. Gotoh, K. Kutsukake, N. Usami

    2024 Korea-Japan PV Joint Workshop  2024.2.19 

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    Event date: 2024.2

    Language:English   Presentation type:Poster presentation  

    Venue:Korea University   Country:Korea, Republic of  

  55. 脱炭素社会創造に向けたシリコン系材料の多様な結晶成長とデバイス応用 Invited

    宇佐美 徳隆

    電気学会東海支部学術講演会  2023.12.19  電気学会東海支部

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    Event date: 2023.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:愛知工業大学  

  56. Development of 2-inch diameter Mg2Si substrates toward a low-costand environmentally friendly SWIR detector: a practical approach using simulations to avoid the crack formation and advance the experiments International conference

    Y. Kimura, X. Liu, N. Usami, S. Sakane and H. Udono

    MRM2023/IUMRS-ICA2023  2023.12.23 

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    Event date: 2023.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  57. How to generate dislocation clusters during cast-growth of silicon ingots? International conference

    Y. Ohno, H. Yoshida, T. Yokoi, K. Matsunaga, K. Yamakoshi, K. Kutsukake, T. Kojima, H. Kudo, N. Usami

    MRM2023/IUMRS-ICA2023  2023.12.24 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  58. Development of crystal orientation analysis for grain boundary structure in Ba-122 bulk International conference

    Y. Shimada, Y. Hasegawa, S. Tokuta, K. Muraoka, T. Kojima , Z. Guo, S. Hata, H. Kudo, N. Usami, A. Yamamoto

    MRM2023/IUMRS-ICA2023  2023.12.24 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  59. Analysis of dislocation cluster generation behavior in polycrystalline Si using twin networks International coauthorship International conference

    K. Torii, T. Kojima, K. Kutsukake, H. Kudo, P. Krenckel, S. Riepe, N. Usami

    MRM2023/IUMRS-ICA2023  2023.12.24 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  60. Effect of Illumination Direction in Data Augmentation Process in Semantic Segmentation of Dislocation Clusters with Multicrystalline Silicon Wafer Images with embedded Crystallographic Orientation Information International conference

    H. Kudo, T. Kojima, T. Matsumoto, K. Kutsukake, N. Usami

    MRM2023/IUMRS-ICA2023  2023.12.23 

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    Event date: 2023.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  61. Thermal Boundary Resistance Measurement of Structure Controlled Grain Boundaries by Laser Heterodyne Photothermal Displacement Method International conference

    T. Harada, H. Tajika, T. Iwakiri, K. Kutsukake, N. Usami, T. Ikari, A. Fukuyama

    MRM2023/IUMRS-ICA2023  2023.12.23 

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    Event date: 2023.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  62. 粒界ネットワーク解析を用いたアルミナ微小粒結晶成長過程の推察

    池田翔太郎, 小島拓人, 沓掛健太郎, 宇佐美徳隆

    第52回結晶成長国内会議  2023.12.6  日本結晶成長学会

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    Event date: 2023.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋   Country:Japan  

  63. Recall estimation of reference identification by Newton’s cooling law International conference

    Yuji Fujita, Noritaka Usami, Fujii Toshiaki, Hiroaki Nagai

    Complex Networks 2023  2023.11.30 

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    Event date: 2023.11

    Language:English   Presentation type:Poster presentation  

  64. Demonstration of Iron-based Superconducting Magnet through Complemental Researcher & Bayesian-driven Process Design and Twinning Network Graph Analysis International conference

    A. Yamamoto, S. Ishiwata, S. Kikuchi, Y. Hasegawa, S. Tokuta, A. Ishii, A. Yamanaka, Y. Shimada, Z. Guo, S. Hata, T. Kojima, K. Kutsukake, H. Kudo, N. Usami

    2023 MRS Fall Meeting & Exhibit  2023.11.29 

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    Event date: 2023.11 - 2023.12

    Language:English   Presentation type:Oral presentation (general)  

  65. Thermoelectric properties of P-doped and B-doped polycrystalline silicon thin films International conference

    K. Shibata, S. Kato, M. Kurosawa, K. Gotoh, S. Miyamoto, T. Itoh, N. Usami, Y. Kurokawa

    2023 MRS Fall Meeting & Exhibit  2023.11.28 

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    Event date: 2023.11 - 2023.12

    Language:English   Presentation type:Poster presentation  

  66. Small negative effect of domain boundary on carrier lifetime of BaSi2 absorber films International conference

    K.O. Hara, R. Takagaki, K. Arimoto, N. Usami

    34th International Photovoltaic Science and Engineering Conference  2023.11.10 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

  67. Application of informatics to photovoltaic research Invited International conference

    Noritaka Usami

    34th International Photovoltaic Science and Engineering Conference  2023.11.8 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (invited, special)  

  68. Improvement of open-circuit voltage and fill factor of silicon quantum dots solar cells by bayesian optimization process International conference

    Y. Kurokawa, F. Kumagai, K. Gotoh, S. Miyamoto, S. Kato, K. Kutsukake, N. Usami

    34th International Photovoltaic Science and Engineering Conference  2023.11.7 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

  69. Passivation enhancement mechanism of TiOx/c-Si heterostructures prepared by atomic layer deposition International conference

    Y. Michishita, K. Gotoh, S. Fukaya, Y. Kurokawa, N. Usami

    34th International Photovoltaic Science and Engineering Conference  2023.11.7 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

  70. Bayesian optimization of carrier selectivity of p-type silicon nano-crystal/silicon oxide compound layer International conference

    K. Mizutani, K. Gotoh, Y. Kurokawa, K. Kutsukake, N. Usami

    34th International Photovoltaic Science and Engineering Conference  2023.11.7 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

  71. TiOx:Nb層の導入によるTiOx/SiOy/Si ヘテロ構造のパッシベーション性能の向上

    深谷昌平, 後藤和泰, 黒川康良, 宇佐美徳隆

    第10回 応用物理学会 名古屋大学 ステューデントチャプター東海地区学術講演会  2023.11.3 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋   Country:Japan  

  72. Improved bottom cell current in perovskite/silicon tandem solar cells by double-sided nanopyramid Si texture

    Y. Li, H. Sai, C. McDonald, Z. Xu, Y. Kurokawa, N. Usami, T. Matsui

    2023.9.21 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  73. Pドープ/Bドープ poly-Si薄膜の熱電特性評価

    柴田 啓介、加藤 慎也、黒澤 昌志、後藤 和泰、宮本 聡、伊藤 孝至、宇佐美 徳隆、黒川 康良

    第84回応用物理学会秋季学術講演会  2023.9.23  応用物理学会

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本   Country:Japan  

  74. 双晶ネットワークを用いた多結晶シリコンにおける 転位クラスター発生挙動の解析

    鳥居 和馬、小島 拓人、沓掛 健太朗、工藤 博章、宇佐美 徳隆

    第84回応用物理学会秋季学術講演会  2023.9.19  応用物理学会

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本   Country:Japan  

  75. Development by using functional grain boundary of n-type mono-cast silicon for solar cells International conference

    H. Matsuo, H. Tanabe, and N. Usami

    40th European Photovoltaic Solar Energy Conference and Exhibition  2023.9.19 

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    Event date: 2023.9

    Language:English   Presentation type:Poster presentation  

    Country:Portugal  

  76. Simultaneous Optimization of Crystal Growth Furnace and Process Using Crystal Growth Simulation and Machine Learning International conference

    H. Tanaka, K. Kutsukake, X. Liu, T. Kojima, and N. Usami

    40th European Photovoltaic Solar Energy Conference and Exhibition  2023.9.18 

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    Event date: 2023.9

    Language:English   Presentation type:Poster presentation  

    Country:Portugal  

  77. カーボンニュートラルに向けた名古屋大学脱炭素社会創造センターの取り組みと太陽光発電に関する研究 Invited

    宇佐美 徳隆

    令和5年 電気学会 基礎・材料・共通部門大会  2023.9.9  電気学会

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋   Country:Japan  

  78. Growth of Epitaxial BaSi2 Films with Carrier Lifetime over 2 μs by Close-Spaced Evaporation International conference

    Kosuke O. Hara, Ryota Takagaki, Keisuke Arimoto, Noritaka Usami

    2023 International Conference on Solid State Devices and Materials  2023.9.7 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  79. Process machine learning, twinning network graph analysis & record high trapped magnetic field of Ba122 polycrystalline bulk superconductors Invited International conference

    A. Yamamoto, S. Ishiwata, S. Kikuchi, Y. Hasegawa, S. Tokuta, A. Ishii, A. Yamanaka, Y. Shimada, Z. Guo, S. Hata, T. Kojima, K. Kutsukake, H. Kudo and N. Usami

    The 13th International Workshop on Processing and Applications of Superconducting (RE)BCO Materials  2023.8.31 

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    Event date: 2023.8 - 2023.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:France  

  80. SiGe epitaxial growth via pulsed laser annealing of Al-Ge pastes on Si International conference

    T. Sato, S. Miyamoto, L. Xuan, S. Suzuki, M. Dhamrin, N. Usami

    International Conference on Crystal Growth and Epitaxy   2023.7.31 

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    Event date: 2023.7 - 2023.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Italy  

  81. Mg2Si crystal growth by the vertical Bridgman method: scale-up and optimization by modeling and growth experiments International conference

    . Liu, T. Umehara, H. Udono and N. Usami

    International Conference on Crystal Growth and Epitaxy   2023.8.1 

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    Event date: 2023.7 - 2023.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Italy  

  82. Optimization of temperature distribution transition in directional solidification method without restriction of growth furnace structure International conference

    H. Tanaka, K. Kutsukake, T. Kojima, X. Liu, N. Usami

    International Conference on Crystal Growth and Epitaxy   2023.7.31 

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    Event date: 2023.7 - 2023.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Italy  

  83. Stress analysis of multicrystalline Si with artificial grain boundaries to investigate the generation mechanism of dislocation clusters International conference

    H. Tajika, K. Kutsukake, T. Kojima, X. Liu, H. Tanaka, N. Usami

    International Conference on Crystal Growth and Epitaxy   2023.8.1 

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    Event date: 2023.7 - 2023.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Italy  

  84. Impact of Silicon Pyramid Texture Size on Perovskite/Silicon Tandem Solar Cell Performance International conference

    Y. Li, H. Sai, C. McDonald, Z. Xu, Y. Kurokawa, N. Usami, T. Matsui

    3rd tandemPV International Workshop  2023.7.7 

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    Event date: 2023.7

    Language:English   Presentation type:Poster presentation  

    Country:France  

  85. カーボンニュートラルに関する大学間連携とキャンパスでの取組 Invited

    宇佐美 徳隆

    第1回カーボンニュートラル共創シンポジウム・プレイベント  2023.7.5 

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    Event date: 2023.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  86. 太陽光発電の歴史の振り返り Invited

    宇佐美徳隆

    第20回次世代の太陽光発電シンポジウム  2023.6.30  日本太陽光発電学会

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    Event date: 2023.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:京都   Country:Japan  

  87. 廃棄結晶シリコン太陽電池から作製した高機能シリコンナノ粒子 Invited

    加藤 慎也,曽我 哲夫,宇佐美 徳隆 ,土居 大亮,黒川 康良

    第20回次世代の太陽光発電シンポジウム  2023.6.30  日本太陽光発電学会

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    Event date: 2023.6

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都   Country:Japan  

  88. p型シリコンナノ結晶/酸化シリコン複合膜におけるキャリア選択能の向上 Invited

    水谷 和嗣,後藤 和泰, 黒川 康良, 沓掛 健太朗, 宇佐美 徳隆

    第20回次世代の太陽光発電シンポジウム  2023.6.30  日本太陽光発電学会

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    Event date: 2023.6

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都   Country:Japan  

  89. 原子層堆積法で作製したTiOx/c-Siヘテロ構造のパッシベーション性能向上機構 Invited

    道下 悠登,深谷 昌平,後藤 和泰,黒川 康良 ,宇佐美 徳隆

    第20回次世代の太陽光発電シンポジウム  2023.6.30  日本太陽光発電学会

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    Event date: 2023.6

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都   Country:Japan  

  90. Numerical simulation study for analysis of hydrogenated amorphous silicon/crystalline silicon heterostructure by Reactive Molecular Dynamics Method International conference

    K. Inoue, N. Uene, K. Gotoh, Y. Kurokawa, T. Tokumasu, N. Usami

    50th IEEE Photovoltaic Specialists Conference  2023.6.11 

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    Event date: 2023.6

    Language:English   Presentation type:Poster presentation  

    Venue:San Juan   Country:Puerto Rico  

  91. Influence of insertion position of a LiF buffer layer on passivation performance of crystalline Si/SiOy/TiOx/Al heterostrucures International conference

    S. Fukaya, K. Gotoh, T. Matsui, H. Sai, Y. Kurokawa, N. Usami

    50th IEEE Photovoltaic Specialists Conference  2023.6.11 

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    Event date: 2023.6

    Language:English   Presentation type:Poster presentation  

    Venue:San Juan   Country:Puerto Rico  

  92. Improvement of Passivation Performance of ​Silicon Nanocrystal/Silicon Oxide Compound Layer ​by Two-step Hydrogen Plasma Treatment​ International conference

    M. Matsumi, K. Gotoh, M. Wilde, Y. Kurokawa, K. Fukutani, N. Usami

    13th International Conference on Silicon Photovoltaics 2023  2023.4.13 

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    Event date: 2023.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Delft   Country:Netherlands  

  93. Implementation of Nanoimprinted Light Trapping Structure Into Si Heterojunction Solar Cells International conference

    Y. Kurokawa, Y. Kimata, Y. Iseki, K. Gotoh, S. Miyamoto, R. Ozaki, K. Nakamura, Y. Ohshita, N. Usami

    13th International Conference on Silicon Photovoltaics 2023  2023.4.11 

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    Event date: 2023.4

    Language:English   Presentation type:Poster presentation  

    Venue:Delft   Country:Netherlands  

  94. Mover Electrode/Stater with Double Electrodes Triboelectric Nanogenerator with High Instantaneous Current Triggered by a Surficial Contact Electrode International coauthorship International conference

    H. Wang, Y. Kurokawa, K. Gotoh, S. Kato, J. Zhang and N. Usami

    MRS Spring Meeting & Exhibit  2023.4.11 

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    Event date: 2023.4

    Language:English   Presentation type:Poster presentation  

  95. 太陽光発電主力電源化に向けた次世代技術開発 Invited

    宇佐美 徳隆

    日本化学会第103春季年会  2023.3.23 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (keynote)  

  96. Ba-122多結晶バルクの粒界組織における新規結晶方位解析法開発

    嶋田 雄介,長谷川 友大,徳田 進ノ助,村岡 幸樹,小島 拓人,郭 子萌,波多 聰,工藤 博章,宇佐美 徳隆,山本 明保

    第70回応用物理学会春季学術講演会  2023.3.16 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  97. BaSi2薄膜の結晶粒界とキャリア寿命の関係

    原康祐, 有元圭介, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  98. シリコンのキャスト成長過程における非対称傾角粒界からの転位発生 International coauthorship

    大野裕, 吉田秀人, 横井達矢, 山腰健太, 小島拓人, 松永克志, Krenckel Patricia, Riepe Stephan, 宇佐美徳隆佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  99. 水素化アモルファスシリコン/結晶シリコンヘテロ構造の解析に向けた反応性力場分子動力学法による数値シミュレーション研究

    井上和磨, 上根直也, 後藤和泰, 黒川康良, 徳増崇, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  100. 多結晶Siの転位密度に対する界面形状と成長時間の影響に関する統計的調査

    田中博之, 沓掛健太朗, 小島拓人, 劉鑫, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  101. ベイズ最適化を援用したシリコン量子ドット積層構造の高品質化と太陽電池応用

    熊谷風雅, 後藤和泰, 加藤慎也, 宮本聡, 沓掛健太朗, 宇佐美徳隆, 黒川康良

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  102. 2段階水素プラズマ処理によるシリコンナノ結晶/酸化シリコン複合膜のパッシベーション性能向上

    松見優志, 後藤和泰, ビルデ マーカス, 黒川康良, 福谷克之, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  103. TiOx/SiOy/結晶Siヘテロ構造におけるAl成膜後のパッシベーション性能に及ぼすLiF層の効果

    深谷昌平, 後藤和泰, 松井卓矢, 齋均, 黒川康良, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  104. 透明導電膜の成膜による結晶シリコンへのプロセスダメージの評価

    小島遥希, 西原達平, 伊藤佑太, Lee Hyunju, 後藤和泰, 宇佐美徳隆, 原知彦, 中村京太郎, 大下祥雄, 小椋厚志

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  105. SiGe薄膜における歪み緩和と結晶傾斜への水素局在効果

    加納光樹, 宮本聡, 黒川康良, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  106. コロイダルリソグラフィ法とナノインプリント法による近赤外光に特化した光閉じ込め構造の作製

    木股佑斗, 後藤和泰, 宮本聡, 黒川康良, 宇佐美徳隆

    第70回応用物理学会春季学術講演会 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  107. 多結晶材料における結晶欠陥発生予測モデルの構築と解析

    原京花, 小島拓人, 沓掛健太朗, 工藤博章, 宇佐美徳隆

    第70回応用物理学会春季学術講演会  2023.3.18 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  108. Research on next-generation PV technology in Japan Invited International conference

    Noritaka Usami

    2nd Indo -Japan Joint Workshop on Photovoltaics  2023.3.9 

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    Event date: 2023.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Chennai   Country:India  

  109. An overview of the “Multicrystalline Informatics” project Invited International conference

    Noritaka Usami

    3rd International Symposium on Modeling of Crystal Growth Processes and Devices  2023.3.7 

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    Event date: 2023.3

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Chennai   Country:India  

  110. Multi-scale modeling and optimization from the process stability to the grain evolution for the mono-like Si ingot growth Invited International conference

    X. Liu, Y. Dang, H. Tanaka, K. Kutsukake, T. Ujihara, and N. Usami

    3rd International Symposium on Modeling of Crystal Growth Processes and Devices  2023.3.8 

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    Event date: 2023.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Chennai   Country:India  

  111. カーボンニュートラルに向けた名古屋大学での取り組み Invited

    宇佐美 徳隆

    新潟大学カーボンニュートラル融合技術研究センター第 1 回研究会  2023.3.3 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  112. 多結晶材料情報学を基盤とした材料開発の新展開 Invited

    宇佐美徳隆

    nano tech 特別シンポジウム  2023.2.2 

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    Event date: 2023.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  113. 太陽光発電主力電源化に向けた先端材料プロセス Invited

    宇佐美 徳隆

    第27回宮崎大学未来エネルギープロジェクト講演会  2022.12.12 

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    Event date: 2022.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  114. Improvement of contact resistivity by boron delta-doping in p-type amorphous silicon surface International conference

    Kazuhiro Gotoh, Ryo Ozaki, Motoo Morimura, Yoshiko Iseki, Kyotaro Nakamura, Yasuyoshi Kurokawa, Yoshio Ohshita and Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Venue:Nagoya   Country:Japan  

  115. 3D stress analysis of multicrystalline Si with artificial grain boundaries and evaluation of dislocation cluster distribution International conference

    Haruki Tajika, Kentaro Kutsukake, Takuto Kojima, Xin Liu, Hiroyuki Tanaka, Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Venue:Nagoya   Country:Japan  

  116. Dislocation generation via the formation of higher-order twin boundaries in mono-cast silicon International conference

    Yutaka Ohno, Kenta Yamakoshi, Takuto Kojima, Hideto Yoshida, Patricia Krenckel, Stephan Riepe, Koji Inoue, Yasuyoshi Nagai, Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  117. Image translation from two optical and one grain boundary images to distribution image of generation points of dislocations clusters in a multicrystalline silicon wafer International conference

    Hiroaki Kudo, Takuto Kojima, Kentaro Kutsukake, Tetsuya Matsumoto, Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Venue:Nagoya   Country:Japan  

  118. A neural network-based estimation of the generation of dislocation clusters in multicrystalline silicon International conference

    Kyoka Hara, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Venue:Nagoya   Country:Japan  

  119. Multiscale modeling on the grain evolution of the SMART ingot growing process by the 3D CAFE method International conference

    Xin Liu, Hiroyuki Tanaka, Kentaro Kutsukake, Takuto Kojima, and Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Venue:Nagoya   Country:Japan  

  120. Reflection measurement system with telecentric optics for prediction of crystal orientation in large-scale multicrystalline structure International conference

    Takuto Kojima, Kyoka Hara, Kentaro Kutsukake, Tetsuya Matsumoto, Hiroaki Kudo, Noritaka Usami

    33rd International Photovoltaic Science and Engineering Conference 

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    Event date: 2022.11

    Venue:Nagoya   Country:Japan  

  121. Study on carrier transport pathways in silicon nanocrystal/silicon oxide composite films International conference

    A. Arata, K. Gotoh, S. Yamada, Y. Kurokawa, T. Itoh, N. Usami

    33rd International Photovoltaic Science and Engineering Conference  2022.11.15 

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    Event date: 2022.11

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

  122. Photoconductivity measurement of silicon quantum dot multilayers for the Bayesian optimization International conference

    F. Kumagai, K. Gotoh, S. Miyamoto, S. Kato, N. Matsuo, S. Yamada, T. Itoh, N. Usami, Y. Kurokawa

    33rd International Photovoltaic Science and Engineering Conference  2022.11.15 

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    Event date: 2022.11

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

  123. Application of hydrogenated silicon nanocrystal/silicon oxide compound layer to crystalline silicon solar cells International conference

    M. Matsumi, K. Gotoh, S. Miyamoto, Y. Kurokawa, N. Usami

    33rd International Photovoltaic Science and Engineering Conference  2022.11.15 

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    Event date: 2022.11

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

  124. Effect of a lithium fluoride layer on the passivation performance of metalized titanium oxide/silicon oxide/silicon heterostructures International conference

    S. Fukaya, K. Gotoh, T. Matsui, H. Sai, Y. Kurokawa, N. Usami

    33rd International Photovoltaic Science and Engineering Conference  2022.11.15 

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    Event date: 2022.11

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

  125. Simulation study of boron delta-doping layer on p-type hydrogenated amorphous silicon in silicon heterojunction solar cells International conference

    K. Gotoh, R. Ozaki, M. Morimura, Y. Iseki, K. Nakamura, Y. Kurokawa, Y. Ohshita and N. Usami

    33rd International Photovoltaic Science and Engineering Conference  2022.11.16 

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    Event date: 2022.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  126. Post-annealing effects on dual-layered hydrogenated amorphous silicon/crystalline silicon heterointerfaces International conference

    K. Inoue, K. Gotoh, K. Kutsukake, N. Sawamoto, T. Nishihara, Y. Kurokawa, A. Ogura and N. Usami

    33rd International Photovoltaic Science and Engineering Conference  2022.11.15 

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    Event date: 2022.11

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya   Country:Japan  

  127. A statical study of the effect of interface shape and growth time on dislocation density in multicrystalline Si International conference

    H. Tanaka, K. Kutsukake, T. Kojima, X. Liu, N. Usami

    The 8th International Symposium on Advanced Science and Technology of Silicon Materials  2022.11.8 

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    Event date: 2022.11

    Language:English   Presentation type:Poster presentation  

    Venue:Okayama   Country:Japan  

  128. e-CSTIにおける研究データ連結の確からしさ

    藤田裕二、宇佐美徳隆、藤井俊彰、永井博昭

    研究・イノベーション学会第37回年次学術大会  2022.10.29 

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    Event date: 2022.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  129. 引用構造のフラクタル次元として定義されるスケール不変な派生h-index

    藤田裕二、宇佐美徳隆

    研究・イノベーション学会第37回年次学術大会  2022.10.29 

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    Event date: 2022.10

    Language:Japanese   Presentation type:Oral presentation (general)  

  130. Multiscale modeling and optimization on the solidification and the grain evolution of the SMART ingot grown by DS-Si process Invited International coauthorship