Updated on 2021/05/11

写真a

 
USAMI Noritaka
 
Organization
Graduate School of Engineering Materials Process Engineering 2 Professor
Title
Professor
Contact information
メールアドレス

Degree 1

  1. Doctor (Engineering) ( 1998.1   The University of Tokyo ) 

Research Interests 4

  1. crystal growth

  2. multicrystalline informatics

  3. defect engineering

  4. solar cell

Research Areas 3

  1. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  2. Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  3. Nanotechnology/Materials / Crystal engineering

Current Research Project and SDGs 4

  1. 多結晶材料情報学の学理構築と高品質多結晶材料創製

  2. 脱炭素社会の早期実現に向けた次世代太陽電池に関する研究

  3. 非真空プロセスによるシリコン系多元混晶材料のエピタキシャル成長

  4. 量子計算機用高品質半導体基板創製に関する研究

Research History 8

  1. 内閣府   政策統括官(科学技術・イノベーション担当)付 総合科学技術・イノベーション会議事務局   上席科学技術政策フェロー

    2018.4 - 2020.3

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    Country:Japan

  2. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics

    2017.4 - 2027.3

  3. 筑波大学大学院数理物質科学研究科非常勤講師

    2015.10 - 2016.3

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    Country:Japan

  4. Visiting Professor, Institute of Fluid Science, Tohoku University

    2013.5 - 2017.3

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    Country:Japan

  5. Associate Professor, Institute for Materials Research, Tohoku University

    2007.4 - 2013.3

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    Country:Japan

  6. Associate Professor, Institute for Materials Research, Tohoku University

    2000.2 - 2007.3

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    Country:Japan

  7. Visiting Researcher, Institute for Applied Photophysics, Technical University of Dresden

    1998.3 - 1999.1

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    Country:Germany

  8. Research Associate, RCAST, The University of Tokyo

    1994.7 - 2000.1

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    Country:Japan

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Education 3

  1. The University of Tokyo   Graduate School, Division of Engineering

    1993.4 - 1994.7

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    Country: Japan

  2. The University of Tokyo   Graduate School, Division of Engineering

    1991.4 - 1993.3

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    Country: Japan

  3. The University of Tokyo   Faculty of Engineering

    1987.4 - 1991.3

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    Country: Japan

Professional Memberships 4

  1. 日本太陽光発電学会   会長

    2020.10

  2. The Japan Society of Applied Physics   Director

    1991.3

  3. The Japan Institute of Metals and Materials

  4. The Japan Association of Crystal Growth

Committee Memberships 13

  1. 9th International Symposium on Control of Semiconductor Interfaces   International Program Committee  

    2021.4   

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    Committee type:学協会

  2. 新エネルギー・産業技術総合開発機構   技術委員  

    2021.1   

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    Committee type:その他

  3. 日本太陽光発電学会次世代セル・モジュール分科会   幹事  

    2020.10   

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    Committee type:学協会

  4. 次世代の太陽光発電シンポジウム   プログラム委員  

    2020.10   

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    Committee type:学協会

  5. International Advisory Committee of the International Photovoltaic Science and Engineering Conference   member  

    2020.8   

  6. International Advisory Committee of World Conference on Photovoltaic Energy Conversion   member  

    2020.8   

  7. The 8th Asian Conference on Crystal Growth and Crystal Technology   Co-Chair of Program and Award Selection Committee  

    2019 - 2021.3   

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    Committee type:その他

  8. The 33rd International Photovoltaic Science and Engineering Conference   General Chair of Organizing Committee  

    2018.12   

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    Committee type:その他

  9. The 10th International Workshop on Crystalline Silicon for Solar Cells   Co-Chair of the organizing committee  

    2016.4 - 2016.8   

  10. 日本学術振興会結晶加工と評価技術第145委員会   幹事  

    2013   

  11. 日本学術振興会次世代の太陽光発電システム第175委員会   副委員長  

    2009 - 2020.3   

  12. International Advisory Committee of the International Workshop on Crystalline Silicon for Solar Cells   member  

    2006.10   

  13. 日本学術振興会結晶成長の科学と技術第161委員会   幹事長代理  

    2000   

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Awards 9

  1. Photo & Illustration Contest 最優秀賞

    2018.9   Semicondoctor Nanoflower

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  2. SiliconPV Award

    2018.3   3D Visualization and Analysis of Dislocation Clusters in Multicrystalline Si Ingot by Approach of Data Science

    Y. Hayama, T. Muramatsu, T. Matsumoto, K. Kutsukake, H. Kudo, N. Usami

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    Award type:Award from international society, conference, symposium, etc.  Country:Switzerland

  3. イノベイティブPV論文賞

    2017.7   多結晶材料情報学によるスマートシリコンインゴットの創製に向けて

    "宇佐美徳隆、羽山優介、髙橋勲、松本哲也、工藤博章、横井達矢、松永克志、沓掛健太朗、大野裕 "

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  4. The best poster award

    2012.6  

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    Country:United States

  5. The best paper award

    2009.11  

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    Country:Korea, Republic of

  6. インテリジェント・コスモス奨励賞

    2008.8  

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    Country:Japan

  7. 安藤博記念学術奨励賞

    2000.7  

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    Country:Japan

  8. Engineering Conference Foundation Fellowship on Silicon Heterostructrues

    1997.9  

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    Country:United States

  9. Young Researcher Award of International Conference on Solid State Devices and Materials

    1993.8  

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    Country:Japan

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Papers 503

  1. Passivation mechanism of the high-performance titanium oxide carrier-selective contacts on crystalline silicon studied by spectroscopic ellipsometry Reviewed International journal

    Gotoh Kazuhiro, Miura Hiroyuki, Shimizu Ayako, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abd6dd

    Web of Science

  2. Mechanisms of carrier lifetime enhancement and conductivity-type switching on hydrogen-incorporated arsenic-doped BaSi2 Reviewed International journal

    S. Aonuki, Z. Xu, Y. Yamashita, K. Gotoh, K. Toko, N. Usami, A.B. Filonov, S.A. Nikitsiuk, D.B. Migas, D.A. Shohonov, and T. Suemasu

    Thin Solid Films   Vol. 724   page: 138629   2021.3

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

  3. Application of Bayesian optimization for improved passivation performance in TiOx/SiOy/c-Si heterostructure by hydrogen plasma treatment Reviewed International journal

    Miyagawa Shinsuke, Gotoh Kazuhiro, Kutsukake Kentaro, Kurokawa Yasuyoshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 2 )   2021.2

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/abd869

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  4. Simulation study on lateral minority carrier transport in the surface inversion layer of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell Reviewed International journal

    Kamioka Takefumi, Hayashi Yutaka, Gotoh Kazuhiro, Hara Tomohiko, Ozaki Ryo, Morimura Motoo, Shimizu Ayako, Nakamura Kyotaro, Usami Noritaka, Ogura Atsushi, Ohshita Yoshio

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 2 )   2021.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abdd02

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  5. Propagation of Crystal Defects during Directional Solidification of Silicon via Induction of Functional Defects Reviewed International coauthorship International journal

    Patricia Krenckel , Yusuke Hayama, Florian Schindler, Theresa Trötschler, Stephan Riepe and Noritaka Usami

    Crystals   Vol. 11 ( 2 ) page: 1 - 10   2021.2

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/cryst11020090

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  6. Origin of recombination activity of non-coherent sigma 3{111} grain boundaries with a positive deviation in the tilt angle in cast-grown silicon ingots Reviewed International journal

    Ohno Yutaka, Tamaoka Takehiro, Yoshida Hideto, Shimizu Yasuo, Kutsukake Kentaro, Nagai Yasuyoshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 1 ) page: .   2021.1

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  7. Activation energy of hydrogen desorption from high-performance titanium oxide carrier-selective contacts with silicon oxide interlayers Reviewed International journal

    Gotoh Kazuhiro, Mochizuki Takeya, Hojo Tomohiko, Shibayama Yuki, Kurokawa Yasuyoshi, Akiyama Eiji, Usami Noritaka

    CURRENT APPLIED PHYSICS   Vol. 21   page: 36 - 42   2021.1

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.cap.2020.10.002

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  8. The impact of highly excessive PbI2 on the correlation of MAPbI(3) perovskite morphology and carrier lifetimes Reviewed International coauthorship International journal

    Van Hoang Nguyen, Hoang Tuan K. A., Kurokawa Yasuyoshi, Usami Noritaka

    JOURNAL OF MATERIALS CHEMISTRY C   Vol. 8 ( 41 ) page: 14481 - 14489   2020.11

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/d0tc04071a

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  9. Generation of dislocation clusters at triple junctions of random angle grain boundaries during cast growth of silicon ingots Reviewed International journal

    Ohno Yutaka, Tajima Kazuya, Kutsukake Kentaro, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 10 )   2020.10

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/abbb1c

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  10. Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation Reviewed International journal

    Mitamura Kazuki, Kutsukake Kentaro, Kojima Takuto, Usami Noritaka

    JOURNAL OF APPLIED PHYSICS   Vol. 128 ( 12 )   2020.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0017823

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  11. Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask Reviewed International coauthorship International journal

    Nguyen V. H., Novikov A., Shaleev M., Yurasov D., Semma M., Gotoh K., Kurokawa Y., Usami N.

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 114   2020.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2020.105065

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  12. Reactive deposition growth of highly (001)-oriented BaSi2 films by close-spaced evaporation Reviewed International journal

    Hara Kosuke O., Takizawa Shuhei, Yamanaka Junji, Usami Noritaka, Arimoto Keisuke

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 113   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2020.105044

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  13. Atomic hydrogen passivation for photoresponsivity enhancement of boron-doped p-BaSi2 films and performance improvement of boron-doped p-BaSi2/n-Si heterojunction solar cells Reviewed International coauthorship International journal

    Xu Zhihao, Sato Takuma, Benincasa Louise, Yamashita Yudai, Deng Tianguo, Gotoh Kazuhiro, Toko Kaoru, Usami Noritaka, Filonov Andrew B., Migas Dmitri B., Shohonov Denis A., Suemasu Takashi

    JOURNAL OF APPLIED PHYSICS   Vol. 127 ( 23 )   2020.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0005763

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  14. Impact of deposition of indium tin oxide double layers on hydrogenated amorphous silicon/crystalline silicon heterojunction Reviewed International journal

    Semma Masanori, Gotoh Kazuhiro, Wilde Markus, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

    AIP ADVANCES   Vol. 10 ( 6 )   2020.6

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0009994

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  15. Significant enhancement of photoresponsivity in As-doped n-BaSi2 epitaxial films by atomic hydrogen passivation Reviewed International journal

    Aonuki Sho, Yamashita Yudai, Sato Takuma, Xu Zhihao, Gotoh Kazuhiro, Toko Kaoru, Terai Yoshikazu, Usami Noritaka, Suemasu Takashi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 5 ) page: .   2020.5

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  16. Undoped p-type BaSi2 emitter prepared by thermal evaporation and post-annealing for crystalline silicon heterojunction solar cells Reviewed International journal

    Kimura Yuki, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 5 )   2020.5

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    DOI: 10.35848/1882-0786/ab8727

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  17. Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers Reviewed International coauthorship International journal

    Hainey Mel Jr., Robin Yoann, Avit Geoffrey, Amano Hiroshi, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 535   2020.4

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    DOI: 10.1016/j.jcrysgro.2020.125522

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  18. 3D visualization of growth interfaces in cast Si ingot using inclusions distribution Reviewed International coauthorship International journal

    Kamibeppu Soichiro, Krenckel Patricia, Troetschler Theresa, Hess Adam, Riepe Stephan, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 535   2020.4

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    DOI: 10.1016/j.jcrysgro.2020.125535

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  19. Drastic enhancement of photoresponsivity in C-doped BaSi2 films formed by radio-frequency sputtering Reviewed International journal

    Nemoto T., Matsuno S., Sato T., Gotoh K., Mesuda M., Kuramochi H., Toko K., Usami N., Suemasu T.

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ab69dc

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  20. Synthesis of Mg2Si thin film by thermal treatment under inert gas atmosphere and evaluation of film quality Reviewed International journal

    Horiba Issei, Fujiwara Michinobu, Nakagawa Yoshihiko, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Itoh Takashi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.35848/1347-4065/ab6b79

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  21. Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell Reviewed International journal

    Kamioka Takefumi, Hayashi Yutaka, Gotoh Kazuhiro, Ozaki Ryo, Nakamura Kyotaro, Morimura Motoo, Naitou Shimako, Usami Noritaka, Ogura Atsushi, Ohshita Yoshio

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.35848/1347-4065/ab70a0

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  22. Preparation and thermoelectric characterization of phosphorus-doped Si nanocrystals/silicon oxide multilayers Reviewed International journal

    Kobayashi Hisayoshi, Akaishi Ryushiro, Kato Shinya, Kurosawa Masashi, Usami Noritaka, Kurokawa Yasuyoshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab6346

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  23. Influence of the time-dependent vapor composition on structural properties of the BaSi2 thin films fabricated by vacuum evaporation Reviewed International journal

    Yoshino Takamasa, Nakagawa Yoshihiko, Kimura Yuki, Fujiwara Michinobu, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.35848/1347-4065/ab6b78

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  24. Fabrication of group IV semiconductor alloys on Si substrate applying Al paste with screen-printing Reviewed International journal

    Nakahara Masahiro, Matsubara Moeko, Suzuki Shota, Dhamrin Marwan, Miyamoto Satoru, Hainey Mel Forrest Jr., Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.35848/1347-4065/ab6e0b

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  25. Effects of evaporation vapor composition and post-annealing conditions on carrier density of undoped BaSi2 evaporated films Reviewed International journal

    Kimura Yuki, Fujiwara Michinobu, Nakagawa Yoshihiko, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.7567/1347-4065/ab6418

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  26. Effect of Si substrate modification on improving the crystalline quality, optical and electrical properties of thermally-evaporated BaSi2 thin-films for solar cell applications Reviewed International coauthorship International journal

    Mai Thi Kieu Lien, Usami Noritaka

    INTERNATIONAL JOURNAL OF MODERN PHYSICS B   Vol. 34 ( 8 )   2020.3

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1142/S021797922050068X

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  27. Surface-orientation control of silicon thin films via aluminum-induced crystallization on monocrystalline cubic substrates International coauthorship

    Hainey Mel Jr., Zhou Eddie (Chenhui), Viguerie Loic, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 533   2020.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.125441

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  28. Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition Reviewed International journal

    Miyagawa Shinsuke, Gotoh Kazuhiro, Ogura Shohei, Wilde Markus, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   Vol. 38 ( 2 )   2020.3

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1116/1.5134720

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  29. Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide coated crystalline silicon heterocontacts Reviewed International journal

    Nakagawa Yuta, Gotoh Kazuhiro, Wilde Markus, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   Vol. 38 ( 2 )   2020.3

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    DOI: 10.1116/1.5134719

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  30. Point defects in BaSi2 thin films for photovoltaic applications studied by positron annihilation spectroscopy International coauthorship

    Montes A., Eijt S. W. H., Tian Y., Gram R., Schut H., Suemasu T., Usami N., Zeman M., Serra J., Isabella O.

    JOURNAL OF APPLIED PHYSICS   Vol. 127 ( 8 )   2020.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5126264

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  31. Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer Reviewed International journal

    Akaishi Ryushiro, Kitazawa Kohei, Gotoh Kazuhiro, Kato Shinya, Usami Noritaka, Kurokawa Yasuyoshi

    NANOSCALE RESEARCH LETTERS   Vol. 15 ( 1 )   2020.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1186/s11671-020-3272-8

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  32. Application of artificial neural network to optimize sensor positions for accurate monitoring: an example with thermocouples in a crystal growth furnace Reviewed International journal

    Boucetta Abderahmane, Kutsukake Kentaro, Kojima Takuto, Kudo Hiroaki, Matsumoto Tetsuya, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 12 )   2019.12

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/ab52a9

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  33. Tuning the Electrical Properties of Titanium Oxide Bilayers Prepared by Atomic Layer Deposition at Different Temperatures

    Gotoh Kazuhiro, Mochizuki Takeya, Kurokawa Yasuyoshi, Usami Noritaka

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 216 ( 22 )   2019.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201900495

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  34. Mossbauer spectroscopic microscope study on diffusion and segregation of Fe impurities in mc-Si wafer Reviewed

    Yoshida Yutaka, Watanabe Tomio, Ino Yuji, Kobayashi Masashi, Takahashi Isao, Usami Noritaka

    HYPERFINE INTERACTIONS   Vol. 240 ( 1 )   2019.9

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s10751-019-1651-2

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  35. Hydrogen concentration at a-Si:H/c-Si heterointerfaces-The impact of deposition temperature on passivation performance

    Gotoh Kazuhiro, Wilde Markus, Kato Shinya, Ogura Shohei, Kurokawa Yasuyoshi, Fukutani Katsuyuki, Usami Noritaka

    AIP ADVANCES   Vol. 9 ( 7 )   2019.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5100086

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  36. Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen International coauthorship

    Xu Zhihao, Shohonov Denis A., Filonov Andrew B., Gotoh Kazuhiro, Deng Tianguo, Honda Syuta, Toko Kaoru, Usami Noritaka, Migas Dmitri B., Borisenko Victor E., Suemasu Takashi

    PHYSICAL REVIEW MATERIALS   Vol. 3 ( 6 )   2019.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevMaterials.3.065403

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  37. Evidence of solute PEDOT:PSS as an efficient passivation material for fabrication of hybrid c-Si solar cells Reviewed International journal

    Van Hoang Nguyen, Kato Shinya, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    SUSTAINABLE ENERGY & FUELS   Vol. 3 ( 6 ) page: 1448 - 1454   2019.6

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/c9se00093c

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  38. Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures International coauthorship

    Ota Yushi, Yurasov Dmitry, Novikov Alexey, Shaleev Mikhail, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 4 )   2019.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab003b

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  39. Epitaxial growth of SiGe on Si substrate by printing and firing of Al-Ge mixed paste Reviewed International journal

    Fukami Shogo, Nakagawa Yoshihiko, Hainey Mel E. Jr., Gotoh Kazuhiro, Kurokawa Yasuyoshi, Nakahara Masahiro, Dhamrin Marwan, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 4 )   2019.4

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab00e5

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  40. Local Structure of High Performance TiOx Electron-Selective Contact Revealed by Electron Energy Loss Spectroscopy Reviewed

    Mochizuki Takeya, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Yamamoto Takahisa, Usami Noritaka

    ADVANCED MATERIALS INTERFACES   Vol. 6 ( 3 )   2019.2

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    DOI: 10.1002/admi.201801645

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  41. Pole figure analysis from electron backscatter diffraction-an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy Reviewed

    Hainey Mel Jr., Robin Yoann, Amano Hiroshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

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    DOI: 10.7567/1882-0786/aafb26

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  42. 3D visualization and analysis of dislocation clusters in multicrystalline silicon ingot by approach of data science Reviewed

    Hayama Yusuke, Matsumoto Tetsuya, Muramatsu Tetsuro, Kutsukake Kentaro, Kudo Hiroaki, Usami Noritaka

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   Vol. 189   page: 239-244   2019.1

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    DOI: 10.1016/j.solmat.2018.06.008

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  43. Fabrication of Si1-xGex layer on Si substrate by Screen-Printing Reviewed

    Nakahara Masahiro, Matsubara Moeko, Suzuki Shota, Fukami Shogo, Dhamrin Manvan, Usami Noritaka

    MRS ADVANCES   Vol. 4 ( 13 ) page: 749-754   2019

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    DOI: 10.1557/adv.2019.15

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  44. Effects of Surface Doping of Si Absorbers on the Band Alignment and Electrical Performance of TiO2-Based Electron-Selective Contacts Reviewed

    Lee Hyunju, Kamioka Takefumi, Usami Noritaka, Ohshita Yoshio

    MRS ADVANCES   Vol. 4 ( 13 ) page: 769-775   2019

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    DOI: 10.1557/adv.2019.164

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  45. Significant improvement on electrical properties of BaSi2 due to atomic H passivation by radio-frequency plasma Reviewed

    Xu Zhihao, Gotoh Kazuhiro, Deng Tianguo, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 12-14   2019

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  46. Fine Line Al Printing on Narrow Point Contact Opening for Front Side Metallization Reviewed

    Tsuji Kosuke, Suzuki Shota, Morishita Naoya, Kuroki Takashi, Nakahara Masahiro, Dhamrin Marwan, Peng Zih-Wei, Buck Thomas, Usami Noritaka

    9TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2019)   Vol. 2147   2019

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    DOI: 10.1063/1.5123846

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  47. Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift Reviewed International coauthorship

    Takeda K., Yoneda J., Otsuka T., Nakajima T., Delbecq M. R., Allison G., Hoshi Y., Usami N., Itoh K. M., Oda S., Kodera T., Tarucha S.

    NPJ QUANTUM INFORMATION   Vol. 4   2018.10

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    DOI: 10.1038/s41534-018-0105-z

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  48. Application of weighted Voronoi diagrams to analyze nucleation sites of multicrystalline silicon ingots Reviewed

    Muramatsu Tetsuro, Hayama Yusuke, Kutsukake Kentaro, Maeda Kensaku, Matsumoto Tetsuya, Kudo Hiroaki, Fujiwara Kozo, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 499   page: 62-66   2018.10

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    DOI: 10.1016/j.jcrysgro.2018.07.028

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  49. Fabrication and properties characterization of BaSi2 thin-films thermally-evaporated on Ge (100) modified substrates Reviewed

    Mai Thi Kieu Lien, Nakagawa Yoshihiko, Kurokawa Yasuyoshi, Usami Noritaka

    THIN SOLID FILMS   Vol. 663   page: 14-20   2018.10

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    DOI: 10.1016/j.tsf.2018.08.004

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  50. Activation mechanism of TiOx passivating layer on crystalline Si

    Mochizuki Takeya, Gotoh Kazuhiro, Ohta Akio, Ogura Shohei, Kurokawa Yasuyoshi, Miyazaki Seiichi, Fukutani Katsuyuki, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 10 )   2018.10

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    DOI: 10.7567/APEX.11.102301

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  51. Fabrication of light-trapping structure by selective etching of thin Si substrates masked with a Ge dot layer and nanomasks Reviewed

    Hombe Atsushi, Kurokawa Yasuyoshi, Gotoh Kazuhiro, Akagi Seimei, Yamamoto Yuzo, Yurasov Dmitry, Novikov Alexey, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RF09

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  52. Influence of barrier layer's height on the performance of Si quantum dot solar cells Reviewed

    Kitazawa Kouhei, Akaishi Ryushiro, Ono Satoshi, Takahashi Isao, Usami Noritaka, Kurokawa Yasuyoshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RF08

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  53. Impact of boron incorporation on properties of silicon solar cells employing p-type polycrystalline silicon grown by aluminum-induced crystallization

    Masuda Shota, Gotoh Kazuhiro, Takahashi Isao, Nakamura Kyotaro, Ohshita Yoshio, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RB12

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  54. Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks

    Ota Yushi, Hombe Atsushi, Nezasa Ryota, Yurasov Dmitry, Novikov Alexey, Shaleev Mikhail, Baidakova Natalie, Morozova Elena, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RB04

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  55. Investigation of effective near-infrared light-trapping structure with submicron diameter for crystalline silicon thin film solar cells

    Sei Miki, Kurokawa Yasuyoshi, Kato Shinya, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08RB21

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  56. Photovoltaic Science and Engineering FOREWORD

    Matsubara Koji, Yamada Akira, Minemoto Takashi, Itoh Takashi, Arafune Koji, Fujiwara Hiroyuki, Hayase Shuzi, Hiramoto Masahiro, Hishikawa Yoshihiro, Imaizumi Mitsuru, Ito Masakazu, Kaizuka Izumi, Kato Takuya, Komoto Keiichi, Kubo Takaya, Maitani Masato, Masuda Atsushi, Miyajima Shinsuke, Morita Kengo, Negami Takayuki, Ogimoto Kazuhiko, Ohdaira Keisuke, Ohshita Yoshio, Okada Yoshitaka, Okamoto Tamotsu, Osaka Itaru, Sai Hitoshi, Sakurai Takeaki, Shen Qing, Shibata Hajima, Sugaya Takeyoshi, Sugiyama Mutsumi, Takamoto Tatsuya, Tanaka Tooru, Terakawa Akira, Ueda Yuzuru, Usami Noritaka, Wakao Shinji, Yagi Shuhei, Yamanaka Sanshiro, Yoshida Yuji, Yoshita Masahiro

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 8 )   2018.8

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    DOI: 10.7567/JJAP.57.08R001

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  57. Effect of substrate type on the electrical and structural properties of TiO2 thin films deposited by reactive DC sputtering

    Cheng Xuemei, Gotoh Kazuhiro, Nakagawa Yoshihiko, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 491   page: 120-125   2018.6

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    DOI: 10.1016/j.jcrysgro.2018.04.001

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  58. Improving the photoresponse spectra of BaSi2 layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma

    Xu Zhihao, Gotoh Kazuhiro, Deng Tianguo, Sato Takuma, Takabe Ryota, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    AIP ADVANCES   Vol. 8 ( 5 )   2018.5

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    DOI: 10.1063/1.5025021

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  59. BaSi2 formation mechanism in thermally evaporated films and its application to reducing oxygen impurity concentration

    Hara Kosuke O., Yamamoto Chiaya, Yamanaka Junji, Arimoto Keisuke, Nakagawa Kiyokazu, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.04FS01

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  60. Simple method for significant improvement of minority-carrier lifetime of evaporated BaSi2 thin film by sputtered-AlOx passivation

    N.M. Shaalan, K.O. Hara, C.T. Trinh, Y. Nakagawa, and N. Usami

    Materials Science in Semiconductor Processing   Vol. 76   page: 37-41   2018.3

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  61. Simple method for significant improvement of minority-carrier lifetime of evaporated BaSi2 thin film by sputtered-AlOx passivation

    Shaalan N. M., Hara K. O., Trinh C. T., Nakagawa Y., Usami N.

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 76   page: 37 - 41   2018.3

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    DOI: 10.1016/j.mssp.2017.12.015

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  62. Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

    D. V. Yurasov, A. V. Novikov, M. V. Shaleev, N. A. Baidakova, E. E. Morozova, E. V. Skorokhodov, Y. Ota, A. Hombe, Y. Kurokawa, and N. Usami

    Materials Science in Semiconductor Processing   ( 75 ) page: 143-148   2018.3

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  63. Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

    Yurasov D. V., Novikov A. V., Shaleev M. V., Baidakova N. A., Morozova E. E., Skorokhodov E. V., Ota Y., Hombe A., Kurokawa Y., Usami N.

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 75   page: 143 - 148   2018.3

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    DOI: 10.1016/j.mssp.2017.11.032

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  64. BaSi2 formation mechanism in thermally-evaporated films and its application to reducing oxygen impurity concentration

    K.O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, and N. Usami

    Japanese Journal of Applied Physics   ( 57 ) page: 04FS01   2018.2

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  65. A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%

    Yoneda Jun, Takeda Kenta, Otsuka Tomohiro, Nakajima Takashi, Delbecq Matthieu R., Allison Giles, Honda Takumu, Kodera Tetsuo, Oda Shunri, Hoshi Yusuke, Usami Noritaka, Itoh Kohei M., Tarucha Seigo

    NATURE NANOTECHNOLOGY   Vol. 13 ( 2 ) page: 102 - +   2018.2

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    DOI: 10.1038/s41565-017-0014-x

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  66. Alternative simple method to realize p-type BaSi2 thin films for Si heterojunction solar cell applications

    Takahashi Kazuma, Nakagawa Yoshihiko, Hara Kosuke O., Takahashi Isao, Kurokawa Yasuyoshi, Usami Noritaka

    MRS ADVANCES   Vol. 3 ( 25 ) page: 1435-1442   2018

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    DOI: 10.1557/adv.2018.191

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  67. Suppression of Near-interface Oxidation in Thermally-evaporated BaSi2 Films and Its Effects on Preferred Orientation and the Rectification Behavior of n-BaSi2/p(+)-Si Diodes

    Hara Kosuke O., Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka

    MRS ADVANCES   Vol. 3 ( 25 ) page: 1387-1392   2018

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    DOI: 10.1557/adv.2018.31

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  68. Fabrication of silicon nanowire based solar cells using TiO2/Al2O3 stack thin films

    Kurokawa Yasuyoshi, Nezasa Ryota, Kato Shinya, Miyazaki Hisashi, Takahashi Isao, Usami Noritaka

    MRS ADVANCES   Vol. 3 ( 25 ) page: 1419-1426   2018

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    DOI: 10.1557/adv.2018.40

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  69. Local Structure of High Performance TiOx Passivating Layer Revealed by Electron Energy Loss Spectroscopy

    Mochizuki Takeya, Gotoh Kazuhiro, Ohta Akio, Kurokawa Yasuyoshi, Miyazaki Seiichi, Yamamoto Takahisa, Usami Noritaka

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 3896-3899   2018

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  70. Photoresponsivity improvement of BaSi2 epitaxial films by capping with hydrogenated amorphous Si layers by radio-frequency H-2 plasma

    Xu Zhihao, Gotoh Kazuhiro, Deng Tianguo, Sato Takuma, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 1871-1873   2018

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  71. Evaluation of Si Nanowire MOS Capacitor Using High-k Dielectric Materials

    Nezasa R., Kurokawa Y., Usami N.

    2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)     page: .   2018

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  72. Development of the Passivation Layer For P-type CuI Thin Film Fabricated by the 2-step Method as the Novel Hole Selective Contact of Silicon Heterojunction Solar Cells

    Cui Min, Gotoh Kazuhiro, Kurokawa Yasuyoshi, Usami Noritaka

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 2118-2120   2018

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  73. Deposition and Characterization of Si Quantum Dot Multilayers Prepared by Plasma Enhanced Chemical Vapor Deposition using SiH4 and CO2 Gases

    Akaishi Ryushiro, Kitazawa Kouhei, Ono Satoshi, Gotoh Kazuhiro, Ichihara Eiji, Kato Shinya, Usami Noritaka, Kurokawa Yasuyoshi

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 2852-2856   2018

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  74. Controllable Optical and Electrical Properties of Nb Doped TiO2 Films by RF Sputtering

    Cheng Xuemei, Gotoh Kazuhiro, Mochizuki Takeya, Usami Noritaka

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 1986-1990   2018

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  75. Application of light trapping structure using Ge dot mask by alkaline etching to heterojunction solar cell

    Hombe Atsushi, Kurokawa Yasuyoshi, Gotoh Kazuhiro, Usami Noritaka

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)     page: 3097-3101   2018

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  76. Investigation on the origin of preferred a-axis orientation of BaSi2 films deposited on Si(100) by thermal evaporation

    Hara Kosuke O., Yamamoto Chiaya, Yamanaka Junji, Arimoto Keisuke, Nakagawa Kiyokazu, Usami Noritaka

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 72   page: 93-98   2017.12

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    DOI: 10.1016/j.mssp.2017.09.020

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  77. Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

    Baidakova N. A., Verbus V. A., Morozova E. E., Novikov A. V., Skorohodov E. V., Shaleev M. V., Yurasov D. V., Hombe A., Kurokawa Y., Usami N.

    SEMICONDUCTORS   Vol. 51 ( 12 ) page: 1542 - 1546   2017.12

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    DOI: 10.1134/S1063782617120028

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  78. Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates

    Y. Arisawa, Y. Hoshi, K. Sawano, J. Yamanaka, K. Arimoto, C. Yamamoto, and N. Usami

    Materials Science in Semiconductor Processing   ( 70 ) page: 127-132   2017.11

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  79. Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates

    Arisawa You, Hoshi Yusuke, Sawano Kentarou, Yamanaka Junji, Arimoto Keisuke, Yamamoto Chiaya, Usami Noritaka

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 70   page: 127 - 132   2017.11

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    DOI: 10.1016/j.mssp.2016.11.024

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  80. Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy

    Arimoto Keisuke, Nakazawa Hiroki, Mitsui Shohei, Utsuyama Naoto, Yamanaka Junji, Hara Kosuke O., Usami Noritaka, Nakagawa Kiyokazu

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 32 ( 11 )   2017.11

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    DOI: 10.1088/1361-6641/aa8a87

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  81. Investigation on the origin of preferred a-axis orientation of BaSi2 films deposited on Si(100) by thermal evaporation

    K. O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, and N. Usami

    Materials Science in Semiconductor Processing   ( 72 ) page: 93-98   2017.10

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  82. Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets

    Deng Tianguo, Gotoh Kazuhiro, Takabe Ryota, Xu Zhihao, Yachi Suguru, Yamashita Yudai, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    JOURNAL OF CRYSTAL GROWTH   Vol. 475   page: 186-191   2017.10

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    DOI: 10.1016/j.jcrysgro.2017.06.017

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  83. Formation of metastable cubic phase in SnS thin films fabricated by thermal evaporation

    Hara Kosuke O., Suzuki Shintaro, Usami Noritaka

    THIN SOLID FILMS   Vol. 639   page: 7 - 11   2017.10

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    DOI: 10.1016/j.tsf.2017.08.025

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  84. Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy

    K. Arimoto, H. Nakazawa, S. Mitsui, N. Utsuyama, J. Yamanaka, K. O. Hara, N. Usami, and K. Nakagawa

    Semiconductor Science and Technology   ( 32 ) page: 114002   2017.9

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  85. Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source

    Hara Kosuke O., Cham Thi Trinh, Kurokawa Yasuyoshi, Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka

    THIN SOLID FILMS   Vol. 636   page: 546-551   2017.8

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    DOI: 10.1016/j.tsf.2017.06.055

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  86. Formation of metastable cubic phase in SnS thin films fabricated by thermal evaporation

    K. O. Hara, S. Suzuki, N. Usami

    Thin Solid Films   ( 639 ) page: 7-11   2017.8

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  87. Effects of surface morphology randomness on optical properties of Si-based photonic nanostructures

    Kurokawa Yasuyoshi, Aonuma Osamu, Tayagaki Takeshi, Takahashi Isao, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 8 )   2017.8

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    DOI: 10.7567/JJAP.56.08MA02

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  88. Effect of Surface Morphology Randomness on Optical Properties of Si-based Photonic Nanostructures Reviewed

    Y. Kurokawa, O. Aonuma, T. Tayagaki ,I. Takahashi, and N. Usami

    Jpn. J. Appl. Phys.   ( 56 ) page: 08MA02   2017.7

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  89. Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n+ Solar Cells

    M. M. Rahman, Yi-Chia Tsai, Ming-Yi Lee, A. Higo, Yiming Li, Y. Hoshi, N. Usami, and S. Samukawa

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 64   page: 7   2017.7

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  90. Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n(+) Solar Cells

    Rahman Mohammad Maksudur, Tsai Yi-Chia, Lee Ming-Yi, Higo Akio, Li Yiming, Hoshi Yusuke, Usami Noritaka, Samukawa Seiji

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 64 ( 7 ) page: 2886-2892   2017.7

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    DOI: 10.1109/TED.2017.2704294

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  91. On the growth mechanism of multicrystalline silicon ingots with small grains fabricated using single-layer silicon beads

    Muramatsu Tetsurou, Takahashi Isao, Babu G. Anandha, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 7 )   2017.7

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    DOI: 10.7567/JJAP.56.075502

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  92. Effects of grain boundary structure controlled by artificially designed seeds on dislocation generation Reviewed International journal

    Iwata Taisho, Takahashi Isao, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 7 )   2017.7

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    DOI: 10.7567/JJAP.56.075501

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  93. Impact of anodic aluminum oxide fabrication and post-deposition anneal on the effective carrier lifetime of vertical silicon nanowires

    Van Hoang Nguyen, Sichanugrist Porponth, Kato Shinya, Usami Noritaka

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   Vol. 166   page: 39 - 44   2017.7

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    DOI: 10.1016/j.solmat.2017.03.013

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  94. Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source

    K. O. Hara, C. T. Trinh. Y. Kurokawa; K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami

    Thin Solid Films   ( 646 ) page: 546-551   2017.6

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  95. Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets

    T. Deng, K. Gotoh, R. Takabe, Z. Xu, S. Yachi, Y. Yamashita, K. Toko, N. Usami, and T. Suemasu

    Journal of Crystal Growth   ( 475 ) page: 186-191   2017.6

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  96. Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique

    Y. Arisawa, K. Sawano, and N. Usami

    Journal of Crystal Growth   Vol. 468   page: 601-604   2017.6

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  97. Controlling impurity distributions in crystalline Si for solar cells by using artificial designed defects

    Hayama Yusuke, Takahashi Isao, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 610 - 613   2017.6

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2016.12.092

    Web of Science

  98. Towards optimized nucleation control in multicrystalline silicon ingot for solar cells

    G.A.Babu, I.Takahashi, T.Muramatsu, and N.Usami

    Journal of Crystal Growth   Vol. 468   page: 620-624   2017.6

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  99. Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE

    K.Arimoto, S.Yagi, J.Yamanaka, K.O.Hara, K.Sawano, N.Usami, and K.Nakagawa

    Journal of Crystal Growth   Vol. 468   page: 625-629   2017.6

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  100. Controlling Impurity Distribution in Quasi-mono Crystalline Si Ingot by Seed Manipulation for Artificially Controlled Defect Technique

    Y. Hayama, I. Takahashi, and N. Usami

    Energy Procedia   Vol. 127   page: 610-613   2017.6

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  101. Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE

    Arimoto Keisuke, Yagi Sosuke, Yamanaka Junji, Hara Kosuke O., Sawano Kentarou, Usami Noritaka, Nakagawa Kiyokazu

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 625 - 629   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.076

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  102. Towards optimized nucleation control in multicrystalline silicon ingot for solar cells

    Babu G. Anandha, Takahashi Isao, Muramatsu Tetsurou, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 620 - 624   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.066

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  103. Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique

    Arisawa You, Sawano Kentarou, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 601 - 604   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.065

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  104. On the growth mechanism of multicrystalline silicon ingots with small grains by using single layer silicon beads

    T. Muramatsu, I. Takahashi, G. Anandha babu, and N. Usami

    Japanese Journal of Applied Physics   ( 56 ) page: 075502   2017.6

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  105. Effects of grain boundary structure controlled by artificially designed seeds on dislocation generation

    T. Iwata, I. Takahashi, and N. Usami

    Japanese Journal of Applied Physics   ( 56 ) page: 075501   2017.6

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  106. Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties

    Cham Thi Trinh, Nakagawa Yoshihiko, Hara Kosuke O., Kurokawa Yasuyoshi, Takabe Ryota, Suemasu Takashi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.05DB06

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  107. Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorber for solar cells

    Bayu M. Emha, Cham Thi Trinh, Takabe Ryota, Yachi Suguru, Toko Kaoru, Usami Noritaka, Suemasu Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.05DB01

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  108. Investigation of p-type emitter layer materials for heterojunction barium disilicide thin film solar cells

    Takahashi Kazuma, Nakagawa Yoshihiko, Hara Kosuke O., Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.05DB04

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  109. Postannealing effects on undoped BaSi2 evaporated films grown on Si substrates

    Suhara Takamichi, Murata Koichi, Navabi Aryan, Hara Kosuke O., Nakagawa Yoshihiko, Cham Thi Trinh, Kurokawa Yasuyoshi, Suemasu Takashi, Wang Kang L., Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.05DB05

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  110. Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties Reviewed

    C. T. Trinh, Y. Nakagawa, K. O. Hara, Y. Kurokawa, R. Takabe, T. Suemasu, and N. Usami

    Jpn. J. Appl. Phys.   ( 56 ) page: 05DB06   2017.4

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  111. Postannealing effects on undoped BaSi2 evaporated films grown on Si substrates Reviewed

    T. Suhara, K. Murata, A. Navabi, K. O. Hara, Y. Nakagawa, C. T. Trinh, Y. Kurokawa, T. Suemasu, K. L. Wang, and N. Usami

    Jpn. J. Appl. Phys.   ( 56 ) page: 05DB05   2017.4

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  112. Investigation of p-type emitter layer materials for heterojunction barium disilicide thin film solar cells Reviewed

    K. Takahashi, Y. Nakagawa, K. O. Hara, Y. Kurokawa, and N. Usami

    Jpn. J. Appl. Phys.   ( 56 ) page: 05DB04   2017.4

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  113. Post-annealing effects on the surface structure and carrier lifetime of evaporated BaSi2 films

    Hara Kosuke O., Cham Thi Trinh, Kurokawa Yasuyoshi, Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

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    DOI: 10.7567/JJAP.56.04CS07

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  114. Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells

    Tayagaki Takeshi, Furuta Daichi, Aonuma Osamu, Takahashi Isao, Hoshi Yusuke, Kurokawa Yasuyoshi, Usami Noritaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

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    DOI: 10.7567/JJAP.56.04CS01

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  115. Impact of anodic aluminum oxide fabrication and post-deposition anneal on the effective carrier lifetime of vertical silicon nanowires

    V. H. Nguyen, P. Sichanugrist, S. Kato, and N. Usami

    Solar Energy Materials and Solar Cells   Vol. 166   page: 39-44   2017.3

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  116. Post-annealing effects on the surface structure and carrier lifetime of evaporated BaSi2 films Reviewed

    K. O. Hara, C. T. Trinh, Y. Kurokawa, K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami

    Japanese Journal of Applied Physics   Vol. 56   page: 04CS07   2017.3

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  117. Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorber for solar cells Reviewed

    M. E. Bayu, C. T. Trinh, R. Takabe, S. Yachi, K. Toko, N. Usami, and T. Suemasu

    Jpn. J. Appl. Phys.   ( 56 ) page: 05DB01   2017.2

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  118. Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells Reviewed

    T.Tayagaki, D.Furuta, O.Aonuma, I.Takahashi, Y.Hoshi, Y.Kurokawa, and N.Usami

    Japanese Journal of Applied Physics   Vol. 56   page: 04CS01   2017.1

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  119. Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications

    Suemasu Takashi, Usami Noritaka

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 50 ( 2 ) page: 1-18   2017.1

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    DOI: 10.1088/1361-6463/50/2/023001

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  120. TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon Reviewed

    J. Yamanaka, N. Usami, S. Amtablian, A. Fave, M. Lemiti, C. Yamamoto, and K. Nakagawa

    Journal of Materials Science and Chemical Engineering   Vol. 5   page: 26-34   2017.1

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  121. Preferred Orientation of BaSi2 Thin Films Fabricated by Thermal Evaporation

    K. O. Hara, C. T. Trinh, Y. Nakagawa, Y. Kurokawa, K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami

    JJAP Conference Proceedings   ( 5 ) page: 11202   2017

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  122. Realization of Crystalline BaSi2 Thin Films by Vacuum Evaporation on (111)-oriented Si Layers Fabricated by Aluminum Induced Crystallization

    J. A. Wibowo, I. Takahashi, K. O. Hara, and N. Usami

    JJAP Conference Proceedings   ( 5 ) page: 11201   2017

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  123. Controlling impurity distributions in crystalline Si for solar cells by using artificial designed defects

    Y.Hayama, I.Takahashi, and N.Usami

    Journal of Crystal Growth   Vol. 468   page: 625-629   2017

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  124. Selective Etching of Si, SiGe, Ge and Its Usage for Increasing the Efficiency of Silicon Solar Cells

    N.A. Baidakova, V.A. Verbus, E.E. Morozova, A.V. Novikov, E.V. Skorohodov, M.V. Shaleev, D.V. Yurasov, A. Hombe, Y. Kurokawa, and N. Usami

    Semiconductors   Vol. 51 ( 12 ) page: 1542-1546   2017

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  125. Development of Spin-coated Copper Iodide Film on Silicon for Use in Hole-selective Contacts

    K. Gotoh, M. Cui, I. Takahashi, Y. Kurokawa, and N. Usami

    Energy Procedia   Vol. 124   page: 598-603   2017

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  126. Controlling impurity distribution in quasi-mono crystalline Si ingot by seed manipulation for artificially controlled defects technique

    Hayama Yusuke, Takahashi Isao, Usami Noritaka

    7TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2017   Vol. 124   page: 734-739   2017

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    DOI: 10.1016/j.egypro.2017.09.088

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  127. Development of spin-coated copper iodide on silicon for use in hole-selective contacts

    Gotoh Kazuhiro, Cui Min, Takahashi Isao, Kurokawa Yasuyoshi, Usami Noritaka

    7TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2017   Vol. 124   page: 598-603   2017

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    DOI: 10.1016/j.egypro.2017.09.081

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  128. Fabrication of CuI/a-Si:H/c-Si Structure for Application to Hole-selective Contacts of Heterojunction Si Solar Cells

    Gotoh Kazuhiro, Cui Min, Thanh Nguyen Cong, Koyama Koichi, Takahashi Isao, Kurokawa Yasuyoshi, Matsumura Hideki, Usami Noritaka

    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)     page: 1765-1768   2017

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  129. Solar Cells Application of p-type poly-Si Thin Film by Aluminum Induced Crystallization

    Masuda Shota, Gotoh Kazuhiro, Takahashi Isao, Nakamura Kyotaro, Ohshita Yoshio, Usami Noritaka

    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)     page: 1794-1796   2017

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  130. Exploring the Potential of Semiconducting BaSi2 for Thin-Film Solar Cell Applications Reviewed

    T. Suemasu and N. Usami

    Journal of Physics D: Applied Physics   Vol. 50   page: 023001   2016.11

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  131. Effects of the Si/Al layer thickness on the continuity, crystalline orientation and the growth kinetics of the poly-Si thin films formed by aluminum-induced crystallization

    S.Tutashkonko, N.Usami

    Thin Solid Films   Vol. 616   page: 213-219   2016.10

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  132. Growth direction control of dendrite crystals in parallel direction to realize high-quality multicrystalline silicon ingot

    T.Hiramatsu, I.Takahashi, S.Matsushima, and N.Usami

    Jpn. J. Appl. Phys.   Vol. 55   page: 091302   2016.8

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  133. Light-induced recovery of effective carier lifetime in boron-doped Czochralski silicon at room temperature Reviewed

    H.Ichikawaa, I.Takahashi, N.Usami, K.Shirasawa, H.Takato

    Energy Procedia   Vol. 92   page: 801-807   2016.8

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  134. Photoresponse properties of BaSi2 film grown on Si (100) by vacuum evaporation .

    C.T.Trinh, Y.Nakagawa, K.O.Hara, R.Takabe, T.Suemasu, and N.Usami

    Materials Research Express   Vol. 3 ( 7 ) page: 076204   2016.7

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  135. Evidence for efficient passivation of vertical silicon nanowires by anodic aluminum oxide

    V.H.Nguyen, S.Kato, and N.Usami

    Solar Energy Materials and Solar Cells   Vol. 157   page: 393-398   2016.7

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  136. Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities Reviewed

    S.Joonwichien, I.Takahashi, K.Kutsukake, and N.Usami

    PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS     2016.5

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    DOI: DOI: 10.1002/pip.2795

  137. p-BaSi2/n-Si heterojunction solar cells with conversion efficiency reaching 9.0%

    D.Tsukahara, S.Yachi, H.Takeuchi, R.Takabe, W.Du, M.Baba, Y.Li, K.Toko, N.Usami, and T.Suemasu

    APPLIED PHYSICS LETTERS   Vol. 108   page: 152101   2016.4

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  138. Modulated surface nanostructures for enhanced light trapping and reduced surface reflection of crystalline silicon solar cells Reviewed

    T.Tayagaki, Y.Hoshi, Y.Hirai, Y.Matsuo, and N.Usami

    Japanese Journal of Applied Physics   ( 55 ) page: 52302   2016.4

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  139. Simple vacuum evaporation route to BaSi2 thin films for solar cell applications Reviewed

    K.O.Hara, Y.Nakagawa, T.Suemasu, and N. Usami

    Energy Procedia   Vol. 141   page: 27-31   2016.3

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  140. On the mechanism of BaSi2 thin film formation on Si substrate by vacuum evaporation Reviewed

    Y.Nakagawaa, K.O.Hara, T.Suemasu, and N.Usami

    Energy Procedia   Vol. 141   page: 23-26   2016.3

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  141. Improved multicrystalline silicon ingot quality using single layer silicon beads coated with silicon nitride as seed layer

    G.Anandha babu, I.Takahashi, S.Matsushima, and N.Usami

    Journal of Crystal Growth   Vol. 441   page: 124-130   2016.2

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  142. Effect of passivation layer grown by atomic layer deposition and sputtering processes on Si quantum dot superlattice to generate high photocurrent for high-efficiency solar cells

    M.M.Rahman, A.Higo, H.Sekhar, M.E.Syazwan, Y.Hoshi, N.Usami, and S.Samukawa

    Japanese Journal of Applied Physics   ( 55 ) page: 032303   2016.2

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  143. Control of electrical properties of BaSi2 thin films by alkali-metal doping using alkali-metal fluorides Reviewed

    K.O.Hara, W.Du, K.Arimoto, J.Yamanaka, K.Nakagawa, K.Toko, T. Suemasu, and N.Usami

    Thin Solid Films   Vol. 603   page: 218-223   2016.2

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  144. Compressively strained Si/Si1_xCx heterostructures formed on Ar ion implanted Si(100) substrates Reviewed

    Y.Hoshi, Y.Arisawa, K. Arimoto, J.Yamanaka, K.Nakagawa, K.Sawano, and N.Usami

    Japanese Journal of Applied Physics   Vol. 55   page: 031302   2016.2

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  145. Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells

    M.M.Rahman, M-Y, Lee, Y-C,Tsai, A. Higo, H.Sekhar, M.Igarashi, M.E.Syazwan, Y.Hoshi, K.Sawano, N.Usami, Y.Li, and S.Samukawa

    PROGRESS IN PHOTOVOLTAICS   ( 28 ) page: 774-780   2015.12

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    DOI: 10.1002/pip.2726

  146. Structural and electrical characterizations of crack-free BaSi2 thin filmsfabricated by thermal evaporation

    K.O.Hara, J.Yamanaka, K. Arimoto, K.Nakagawa, T.Suemasu, N.Usami

    Thin Solid Films   Vol. 595   page: 68-72   2015.10

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  147. Seed manipulation for artificially controlled defect technique in new growth method for quasi-monocrystalline Si ingot based on casting Reviewed

    I.Takahashi, S.Joonwichien, T.Iwata, and N.Usami

    Applied Physics Express   Vol. 8   page: 105501   2015.9

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  148. Selective growth of vertical silicon nanowire array guided by anodic aluminum oxide template Reviewed

    V.H.Nguyen, Y.Hoshi, N.Usami, M.Konagai

    Japanese Journal of Applied Physics   Vol. 54   page: 095003   2015.8

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  149. Comparison of phosphorus gettering effect in faceted dendrite and small grain of multicrystalline silicon wafers grown by floating cast method Reviewed

    S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KD11   2015.7

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  150. Application of heterojunction to Si-based solar cells using photonic nanostructures coupled with vertically aligned Ge quantum dots Reviewed

    I.Takahashi, Y.Hoshi, T.Tayagaki, T.Oikawa, K.Ohdaira, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KA06   2015.7

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  151. Fabrication of single-phase BaSi2 thin films on silicon substrates by vacuumevaporation for solar cell applications Reviewed

    Y.Nakagawa, K.O.Hara, T.Suemasu, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KC03   2015.7

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  152. Effect of Anodization Process of Aluminum Oxide Template on Selective Growth of Si Nanowires Reviewed

    V.H.Nguyen, S.Tutashkonko, Y.Hoshi, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KA02   2015.6

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  153. Geometry in Si-based photonic nanostructures coupled with Ge quantum dot multilayers and its impact on optical properties Reviewed

    O.Aonuma, Y.Hoshi, T.Tayagaki, A.Novikov, D.Yurasov, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 08KA01   2015.6

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  154. Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy Reviewed

    K.Shojiki, J-H.Choi, T.Iwabuchi, N.Usami, T.Tanikawa, S.Kuboya, T.Hanada, R.Katayama, T.Matsuoka

    Applied Physics Letters   Vol. 106   page: 222102   2015.6

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  155. Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot

    I.Takahashi, S.Joonwichien, S.Matsushima, N.Usami

    Journal of Applied Physics   ( 117 ) page: 095701   2015.3

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  156. Realization of single-phase BaSi2 films by vacuum evaporation with suitable optical properties and carrier lifetime for solar cell applications Reviewed

    K.O.Hara, Y.Nakagawa, T.Suemasu, N.Usami

    Japanese Journal of Applied Physics   Vol. 54   page: 07JE02   2015.3

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  157. Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy

    D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu

    Japanese Journal of Applied Physics   Vol. 54 ( 3 ) page: 030306   2015.3

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  158. Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy Reviewed

    D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu

    Japanese Journal of Applied Physics   Vol. 54   page: 030306   2015.2

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  159. Absorption enhancement in nanotextured solar cells with Ge/Si heterostructures

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami

    Japanese Journal of Applied Physics   ( 54 ) page: 04DR03   2015.1

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  160. Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization Reviewed

    K.Toko, M.Nakata, A.Okada, M.Sasase, N.Usami, T.Suemasu

    INTERNATIONAL JOURNAL OF PHOTOENERGY   ( 2015 ) page: 790242   2015.1

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  161. バルク結晶成長のこの10年 Reviewed

    宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志

      Vol. 42 ( 1 ) page: pp.64-68   2015

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  162. Light trapping by direction-dependent light transmission in front-surface photonic nanostructures

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami

    Applied Physics Express   Vol. 7   page: 122301   2014.11

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  163. Simulation study of Ge/Si heterostructured solar cells yielding improved open-circuit voltage and quantum efficiency

    T.Tayagaki, Y.Kishimoto, Y.Hoshi, I.Takahashi, N.Usami

    Japanese Journal of Applied Physics   ( 53 ) page: 110312   2014.10

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  164. Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy

    D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu

    D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu   Vol. 116   page: 123709   2014.9

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  165. Towards implementation of floating cast method for growing large-scale high-quality multicrystalline silicon ingot using designed double crucibles

    S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami

    PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS   ( 22 ) page: 726-732   2014.7

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  166. Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique

    M.Baba, K.Watanabe, K.O.Hara, K.Toko, T.Sekiguchi, N.Usami, T.Suemasu

    Japanese Journal of Applied Physics   ( 53 ) page: 078004   2014.6

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  167. Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications

    W.D, M.Baba, K.Toko, K.Kosuke, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu

    Journal of Applied Physics   Vol. 115   page: 223701   2014.6

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  168. Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications

    W.Du, M.Baba, K.Toko, K.O.Hara, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu

    Journal of Applied Physics   Vol. 115   page: 223701   2014.6

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  169. Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111) Reviewed

    R.Takabe, K.O.Hara, M.Baba, W.Du, N.Shimada, K.Toko, N.Usami, T.Suemasu

      ( 115 ) page: 193510   2014.5

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  170. Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells

    T.Tayagaki, Y.Hoshi, K.Ooi, T.Kiguchi, N.Usami

    Thin Solid Films   Vol. 557   page: 368-371   2014.4

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    DOI: 10.1016/j.tsf.2013.08.042

  171. Control of geometry in Si-based photonic nanostructures formed by maskless wet etching process and its impact on optical properties

    Y.Hoshi, T.Tayagaki, T.Kiguchi, N.Usami

    Thin Solid Films   Vol. 557   page: 338-341   2014.4

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    DOI: 10.1016/j.tsf.2013.10.066

  172. Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange

    R.Numata, K.Toko, N.Usami, T.Suemasu

    Thin Solid Films   Vol. 557   page: 147-150   2014.4

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    DOI: 10.1016/j.tsf.2013.08.044

  173. Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer

    R.Numata, K.Toko, K.Nakazawa, N.Usami, T.Suemasu

    Thin Solid Films   Vol. 557   page: 143-146   2014.4

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    DOI: 10.1016/j.tsf.2013.08.040

  174. N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing

    K.O.Hara, Y.Hoshi, N.Usami, Y.Shiraki, K.Nakamura, K.Toko, T.Suemasu

    Thin Solid Films   Vol. 557   page: 90-93   2014.4

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    DOI: 10.1016/j.tsf.2013.08.038

  175. Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange

    K.Toko, R.Numata, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    Journal of Applied Physics   Vol. 115 ( 9 ) page: 094301   2014.3

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    DOI: 10.1063/1.4867218

  176. Formation process of Si3N4 particles on surface of Si ingots grown using silica crucibles with Si3N4 coating by noncontact crucible method

    K.Nakajima, K.Morishita, R.Murai, N.Usami

    Journal of Crystal Growth   Vol. 389   page: 112-119   2014.3

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    DOI: 10.1016/j.jcrysgro.2013.12.006

  177. Orientation control of Ge thin films by underlayer-selected Al-induced crystallization

    K.Toko, K.Nakazawa, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    CrystEngComm   Vol. 16 ( 13 ) page: 2578-2583   2014.2

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    DOI: 10.1039/c3ce42057d

  178. Structural characterization of polycrystalline Ge thin films on insulators formed by diffusion-enhanced Al-induced layer exchange

    R.Numata, K.Toko, N.Oya, N.Usami and T.Suemasu

    Japanese Journal of Applied Physics   Vol. 53   page: 04EH03   2014.2

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  179. Al-induced crystallization of amorphous Ge thin films on conducting layer coated glass substrates

    K.Nakazawa, K.Toko, N.Usami, T.Suemasu

    Japanese Journal of Applied Physics   Vol. 53   page: 04EH01   2014.2

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  180. Fabrication and characterization of BaSi2 epitaxial films over 1 mu m in thickness on Si(111) Reviewed

    R.Takabe, K.Nakamura, M.Baba, W.Du, M.A.Khan, K.Toko, M.Sasase, K.Hara, N.Usami, T.Suemasu

    Japanese Journal of Applied Physics   Vol. 53   page: 04ER04   2014.2

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  181. Enhanced photocarrier generation in large-scale photonic nanostructures fabricated from vertically aligned quantum dots

    T.Tayagaki, Y.Hoshi, Y.Kishimoto, and N.Usami

    Optics Express   Vol. 22 ( 52 ) page: A225-A232   2014.1

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    DOI: 10.1364/oe.22.00a225

  182. Low-temperature (180 degrees C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

    K.Toko, R.Numata, N.Oya, N.Fukata, N.Usami, T.Suemasu

    Applied Physics Letters   Vol. 104 ( 2 ) page: 022106   2014.1

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    DOI: 10.1063/1.4861890

  183. Grazing-incidence small-angle X-ray scattering from Ge nanodots self-organized on Si(001) examined with soft X-rays

    T.Yamamoto, H.Okuda, K.Takeshita, N.Usami, Y.Kitajima, H.Ogawa

    Journal of Synchrotron Radiation   Vol. 21   page: 161-164   2014.1

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    DOI: 10.1107/s1600577513026088

  184. Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains

    K.kutsukake, N.Usami, Y.Ohno,Y.Tokumoto, I.Yonenaga

    Ieee Journal of Photovoltaics   Vol. 4 ( 1 ) page: 84-87   2014.1

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    DOI: 10.1109/jphotov.2013.2281730

  185. Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates

    K.Nakazawa, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1781-1784   2013.12

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  186. Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates

    M.Baba, K.O.Hara, K.Toko, N.Saito, N.Yoshizawa, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1756-1768   2013.12

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  187. Investigation of the tunneling properties and surface morphologies of BaSi2/Si tunnel junctions for BaSi2 solar cell applications

    W.Du, M.Baba, R.Takabe, N.Zhang, K.Toko, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1765-1768   2013.12

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  188. Fabrication of BaSi2 films on (111)-oriented Si layers formed by inverted Al-induced crystallization method on glass structure

    R.Numata, K.Toko, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1769-1772   2013.12

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  189. Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy

    R.Takabe, M.Baba, K.Nakamura, W.Du, M.A.Khan, S.Koike, K.Toko, K.O.Hara, N.Usami, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1753-1755   2013.12

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  190. Mechanism of strain relaxation in BaSi2 epitaxial films on Si(111) substrates during post-growth annealing and application for film exfoliation

    K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu

    physica status solidi ©   Vol. 10   page: 1677-1680   2013.11

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  191. Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant-Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing

    K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu

    Applied Physics Express   Vol. 6   page: 112302   2013.11

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  192. Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing

    K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu

    Applied Physics Express   Vol. 6 ( 11 ) page: 112302   2013.10

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    DOI: 10.7567/apex.6.112302

  193. Theory of open-circuit voltage and the driving force of charge separation in pn-junction solar cells

    K.O.Hara, N.Usami

    Journal of Applied Physics   Vol. 114   page: 153101   2013.10

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  194. Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy

    M.Baba, S.Tsurekawa, K.Watanabe, W.Du, K.Toko, K.O.Hara, N.Usami, T.Sekiguchi, T.Suemasu

    Applied Physics Letters   Vol. 103   page: 142113   2013.9

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  195. Investigation of the open-circuit voltage in solar cells doped with quantum dots

    T.Tayagaki, Y.Hoshi, N.Usami

    Scientific Reports   Vol. 3   page: 2703   2013.9

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    DOI: 10.1038/srep02703

  196. Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries

    K.Kutsukake, N.Usami, Y.Ohno, Y.Tokumoto, I.Yonenaga

    Applied Physics Express   Vol. 6   page: 025505   2013.9

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  197. Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy

    Y.Funase, M.Suzuno, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu

    Journal of Crystal Growth   Vol. 378   page: 365-367   2013.9

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  198. Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature

    XJ.Xu, N.Usami, T.Maruizumi, Y.Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 636-639   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.11.002

  199. On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique

    K.Sawano, Y.Hoshi, S.Nagakura, K.Arimoto, K.Nakagawa, N.Usami, Y.Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 251-253   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.100

  200. Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells

    M.A.Khan, K.O.Hara, K.Nakamura, W.J.Du, M.Baba, K.Toh, M.Suzuno, K.Toko, N.Usami, T.Suemasu

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 201-204   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.153

  201. Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy

    S.Koike, K.Toh, M.Baba, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 198-200   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.052

  202. Gas-source MBE growth of strain-relaxed Si1-xCx on Si(100) substrates

    K.Arimoto, S.Sakai, H.Furukawa, J.Yamanaka, K.Nakagawa, N.Usami, Y.Hoshi, K.Sawano, Y.Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 212-217   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.152

  203. Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy

    M.Baba, K.Toh, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu

    JOURNAL OF CRYSTAL GROWTH   Vol. 378   page: 193-197   2013.9

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    DOI: 10.1016/j.jcrysgro.2012.12.176

  204. Large-Grained Polycrystalline (111) Ge Films on Insulators by Thickness-Controlled Al-Induced Crystallization

    K. Nakazawa, K. Toko, N. Saitoh, N.Usami and T. Suemasu

    Ecs Journal of Solid State Science and Technology   Vol. 2 ( 11 ) page: Q195-Q199   2013.8

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    DOI: 10.1149/2.007311jss

  205. Control of Dip Shape in Photonic Nanostructures by Maskless Wet-Etching Process and Its Impact on Optical Properties

    Y.Hoshi, WG.Pan, T.Kiguchi, K.Ooi, T.Tayagaki, N.Usami

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 ) page: UNSP 080202   2013.8

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    DOI: 10.7567/JJAP.52.080202

  206. Double-Layered Ge Thin Films on Insulators Formed by an Al-Induced Layer-Exchange Process

    K.Toko, K.Nakazawa, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    Crystal Growth & Design   Vol. 13 ( 9 ) page: 3908-3912   2013.7

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    DOI: 10.1021/cg4005533

  207. Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates

    K.Toko, N.Fukata, K.Nakazawa, M.Kurosawa, N.Usami, M.Miyao, T.Suemasu

    JOURNAL OF CRYSTAL GROWTH   Vol. 372   page: 189-192   2013.6

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    DOI: 10.1016/j.jcrysgro.2013.03.031

  208. Effect of Ga content and growth temperature on Cu(In,Ga)Se2 thin film deposited on heat-resistant glass substrates

    T.Higuchi, N.Usami, T.Minemoto

    Phys.Status Solidi C   Vol. 10   page: 1035-1037   2013.5

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  209. Generation of high photocurrent in three-dimensional silicon quantum dot superlattice fabricated by combining bio-template and neutral beam etching for quantum dot solar cells

    M.Igarashi, WG.Hu, M.M.Rahman, N.Usami, S.Samukawa

    NANOSCALE RESEARCH LETTERS   Vol. 8   page: 228   2013.5

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    DOI: 10.1186/1556-276X-8-228

  210. Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation

    K.O.Hara, Y.Hoshi, N.Usami, Y.Shiraki, K.Nakamura, K.Toko, T.Suemasu,

    THIN SOLID FILMS   Vol. 534   page: 470-473   2013.5

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    DOI: 10.1016/j.tsf.2013.02.014

  211. Effects of crystal defects and their interactions with impurities on electrical properties of multicrystalline Si

    S.Joonwichien, S.Matsushima, N.Usami

    JOURNAL OF APPLIED PHYSICS   Vol. 113 ( 13 ) page: 133503   2013.4

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    DOI: 10.1063/1.4798600

  212. Orientation Control of Large-Grained Si Films on Insulators by Thickness-Modulated Al-Induced Crystallization

    R.Numata, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu

    CRYSTAL GROWTH & DESIGN   Vol. 13 ( 4 ) page: 1767-1770   2013.4

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    DOI: 10.1021/cg4000878

  213. In-situ heavily p-type doping of over 10(20) cm(-3) in semiconducting BaSi2 thin films for solar cells applications

    M.A.Khan, K.O.Hara, W.Du, M.Baba, K.Nakamura, M.Suzuno, K.Toko, N.Usami, T.Suemasu

    APPLIED PHYSICS LETTERS   Vol. 102 ( 11 ) page: 112107   2013.3

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    DOI: 10.1063/1.4796142

  214. Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)

    K. Nakamura, M. Baba, M. A. Khan, W. Du, M. Sasase, K. O. Hara, N. Usami, K. Toko and T. Suemasu

    Journal of Applied Physics   Vol. 113 ( 5 )   2013.2

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    DOI: 10.1063/1.4790597

  215. Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries

    K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto and I. Yonenaga

    Applied Physics Express   Vol. 6 ( 2 )   2013.2

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    DOI: 10.7567/APEX.6.025505

  216. On the growth mechanism of polycrystalline silicon thin film by Al-induced layer exchange process

    N. Usami, M. N. Jung and T. Suemasu

    Journal of Crystal Growth   Vol. 362   page: 16-19   2013.1

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  217. Effects of formation of mini-bands in two-dimensional array of silicon nanodisks with SiC interlayer for quantum dot solar cells

    M. Igarashi, M. F. Budiman, W. G. Pan, W. G. Hu, Y. Tamura, M. E. Syazwan, N. Usami and S. Samukawa

    Nanotechnology   Vol. 24 ( 1 )   2013.1

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    DOI: 10.1088/0957-4484/24/1/015301

  218. Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy

    K. Arimoto, H. Furukawa, J. Yamanaka, C. Yamamoto, K. Nakagawa, N. Usami, K. Sawano and Y. Shiraki

    Journal of Crystal Growth   Vol. 362   page: 276-281   2013.1

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  219. Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx(001)

    R. E. Balderas-Navarro, N. A. Ulloa-Castillo, K. Arimoto, G. Ramirez-Melendez, L. F. Lastras-Martinez, H. Furukawa, J. Yamanaka, A. Lastras-Martinez, J. M. Flores-Camacho, N. Usami, D. Stifter and K. Hingerl

    Applied Physics Letters   Vol. 102 ( 1 )   2013.1

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    DOI: 10.1063/1.4773560

  220. Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy

    M.Baba, S.Tsurekawa, K.Watanabe, W.Du, K.Toko, K.O.Hara, N.Usami, T.Sekiguchi and T.Suemasu

    Applied Physics Letters   Vol. 103   page: 142113   2013

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    DOI: 10.1063/1.4824335

  221. Theory of open-circuit voltage and the driving force of charge separation in pn-junction solar cells

    K.O. Hara, N.Usami

    Journal of Applied Physics   Vol. 114 ( 15 ) page: 153101   2013

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    DOI: 10.1063/1.4825046

  222. Silicon-Based Light-Emitting Devices Based on Ge Self-Assembled Quantum Dots Embedded in Optical Cavities

    X. J. Xu, S. Narusawa, T. Chiba, T. Tsuboi, J. S. Xia, N. Usami, T. Maruizumi and Y. Shiraki

    Ieee Journal of Selected Topics in Quantum Electronics   Vol. 18 ( 6 ) page: 1830-1838   2012.12

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  223. Influence of Thermal Annealing on the Carrier Extraction in Ge/Si Quantum Dot Solar Cells

    T. Tayagaki, N. Usami and Y. Kanemitsu

    Japanese Journal of Applied Physics   Vol. 51 ( 10 )   2012.10

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    DOI: 10.1143/JJAP.51.10NE24

  224. Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness

    A. Okada, K. Toko, K. O. Hara, N. Usami and T. Suemasu

    Journal of Crystal Growth   Vol. 356   page: 65-69   2012.10

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  225. Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization

    K. Ohdaira, K. Sawada, N. Usami, S. Varlamov and H. Matsumura

    Japanese Journal of Applied Physics   Vol. 51 ( 10 )   2012.10

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    DOI: 10.1143/JJAP.51.10NB15

  226. Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate

    K. O. Hara, N. Usami, K. Toh, K. Toko and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 51 ( 10 )   2012.10

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    DOI: 10.1143/JJAP.51.10NB06

  227. Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon

    K. O. Hara, N. Usami, K. Toh, M. Baba, K. Toko and T. Suemasu

    Journal of Applied Physics   Vol. 112 ( 8 )   2012.10

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    DOI: 10.1063/1.4759246

  228. Growth velocity and grain size of multicrystalline solar cell silicon

    I. Brynjulfsen, K. Fujiwara, N. Usami and L. Amberg

    Journal of Crystal Growth   Vol. 356   page: 17-21   2012.10

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  229. Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature

    K. Toh, K. O. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 51 ( 9 )   2012.9

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    DOI: 10.1143/JJAP.51.095501

  230. Enhanced carrier extraction from Ge quantum dots in Si solar cells under strong photoexcitation

    T. Tayagaki, N. Usami, W. G. Pan, Y. Hoshi, K. Ooi and Y. Kanemitsu

    Applied Physics Letters   Vol. 101 ( 13 )   2012.9

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    DOI: 10.1063/1.4756895

  231. Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 mu m on Si(111)

    M. Baba, K. Nakamura, W. J. Du, M. A. Khan, S. Koike, K. Toko, N. Usami, N. Saito, N. Yoshizawa and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 51 ( 9 )   2012.9

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    DOI: 10.1143/JJAP.51.098003

  232. Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

    K. Toko, M. Kurosawa, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao and T. Suemasu

    Applied Physics Letters   Vol. 101 ( 7 )   2012.8

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    DOI: 10.1063/1.4744962

  233. Quantum dot solar cells using 2-dimensional array of 6.4-nm-diameter silicon nanodisks fabricated using bio-templates and neutral beam etching

    M. Igarashi, M. F. Budiman, W. G. Pan, W. G. Hu, N. Usami and S. Samukawa

    Applied Physics Letters   Vol. 101 ( 6 )   2012.8

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    DOI: 10.1063/1.4745195

  234. Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities

    X. J. Xu, T. Tsuboi, T. Chiba, N. Usami, T. Maruizumi and Y. Shiraki

    Optics Express   Vol. 20 ( 13 ) page: 14714-14721   2012.6

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  235. Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique

    M. Baba, K. Toh, K. Toko, N. Saito, N. Yoshizawa, K. Jiptner, T. Sekiguchi, K. O. Hara, N. Usami and T. Suemasu

    Journal of Crystal Growth   Vol. 348 ( 1 ) page: 75-79   2012.6

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  236. Simultaneous enhanced photon capture and carrier generation in Si solar cells using Ge quantum dot photonic nanocrystals

    N. Usami, W. G. Pan, T. Tayagaki, S. T. Chu, J. S. Li, T. H. Feng, Y. Hoshi and T. Kiguchi

    Nanotechnology   Vol. 23 ( 18 )   2012.5

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    DOI: 10.1088/0957-4484/23/18/185401

  237. Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities

    T. Tsuboi, X. J. Xu, J. S. Xia, N. Usami, T. Maruizumi and Y. Shiraki

    Applied Physics Express   Vol. 5 ( 5 )   2012.5

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    DOI: 10.1143/APEX.5.052101

  238. Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures

    T. Tanaka, Y. Hoshi, K. Sawano, N. Usami, Y. Shiraki and K. M. Itoh

    Applied Physics Letters   Vol. 100 ( 22 )   2012.5

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    DOI: 10.1063/1.4723690

  239. Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates

    K. Toh, K. O. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko and T. Suemasu

    Journal of Crystal Growth   Vol. 345 ( 1 ) page: 16-21   2012.4

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  240. Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress

    K. Nakajima, R. Murai, K. Morishita, K. Kutsukake and N. Usami

    Journal of Crystal Growth   Vol. 344 ( 1 )   2012.4

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    DOI: 10.1016/j.jcrysgro.2012.01.051

  241. Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

    T. Iwabuchi, Y. H. Liu, T. Kimura, Y. T. Zhang, K. Prasertsuk, H. Watanabe, N. Usami, R. Katayama and T. Matsuoka

    Japanese Journal of Applied Physics   Vol. 51 ( 4 )   2012.4

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    DOI: 10.1143/JJAP.51.04DH02

  242. Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n(+)-BaSi2/p(+)-Si Tunnel Junction to Undoped BaSi2 Overlayers

    W. J. Du, T. Saito, M. A. Khan, K. Toko, N. Usami and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 51 ( 4 )   2012.4

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    DOI: 10.1143/JJAP.51.04DP01

  243. Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells

    W. J. Du, M. Suzuno, M. A. Khan, K. Toh, M. Baba, K. Nakamura, K. Toko, N. Usami and T. Suemasu

    Applied Physics Letters   Vol. 100 ( 15 )   2012.4

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    DOI: 10.1063/1.3703585

  244. Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films

    K. O. Hara, N. Usami, Y. Hoshi, Y. Shiraki, M. Suzuno, K. Toko and T. Suemasu

    Japanese Journal of Applied Physics   Vol. 50 ( 12 )   2011.12

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    DOI: 10.1143/JJAP.50.121202

  245. The effect of the presence of an Al-doped ZnO layer on the preferential crystal orientation of polycrystalline silicon thin films grown by an Al-induced layer exchange method

    M. Jung, A. Okada, T. Saito, T. Suemasu and N. Usami

    Journal of Ceramic Processing Research   Vol. 12   page: S187-S192   2011.11

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  246. Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth

    K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, I. Yonenaga, K. Morishita and K. Nakajima

    Journal of Applied Physics   Vol. 110 ( 8 )   2011.10

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    DOI: 10.1063/1.3652891

  247. Formation mechanism of twin boundaries during crystal growth of silicon

    K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, K. Morishita and K. Nakajima

    Scripta Materialia   Vol. 65 ( 6 ) page: 556-559   2011.9

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  248. Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation

    Y. Hoshi, K. Sawano, A. Yamada, S. Nagakura, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Applied Physics Express   Vol. 4 ( 9 )   2011.9

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    DOI: 10.1143/APEX.4.095701

  249. Configuration and local elastic interaction of ferroelectric domains and misfit dislocation in PbTiO3/SrTiO3 epitaxial thin films

    T. Kiguchi, K. Aoyagi, Y. Ehara, H. Funakubo, T. Yamada, N. Usami and T. J. Konno

    Science and Technology of Advanced Materials   Vol. 12 ( 3 )   2011.6

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    DOI: 10.1088/1468-6996/12/3/034413

  250. Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells

    N. Usami, I. Takahashi, K. Kutsukake, K. Fujiwara and K. Nakajima

    Journal of Applied Physics   Vol. 109 ( 8 )   2011.4

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    DOI: 10.1063/1.3576108

  251. Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels

    K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, K. Arimoto, K. Nakagawa, N. Usami and Y. Shiraki

    Microelectronic Engineering   Vol. 88   page: 465-468   2011.4

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  252. In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization

    M. Jung, A. Okada, T. Saito, T. Suemasu, C. Y. Chung, Y. Kawazoe and N. Usami

    Japanese Journal of Applied Physics   Vol. 50 ( 4 )   2011.4

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    DOI: 10.1143/JJAP.50.04DP02

  253. Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities

    I. Takahashi, N. Usami, H. Mizuseki, Y. Kawazoe, G. Stokkan and K. Nakajima

    Journal of Applied Physics   Vol. 109 ( 3 )   2011.2

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    DOI: 10.1063/1.3544208

  254. Pattern formation mechanism of a periodically faceted interface during crystallization of Si

    M. Tokairin, K. Fujiwara, K. Kutsukake, H. Kodama, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 312 ( 24 ) page: 3670-3674   2010.12

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  255. A grazing incidence small-angle x-ray scattering analysis on capped Ge nanodots in layer structures

    H. Okuda, M. Kato, K. Kuno, S. Ochiai, N. Usami, K. Nakajima and O. Sakata

    Journal of Physics-Condensed Matter   Vol. 22 ( 47 )   2010.12

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    DOI: 10.1088/0953-8984/22/47/474003

  256. Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization

    H. Suzuki, N. Usami, A. Nomura, T. Shishido, K. Nakajima and T. Suemasu

    Journal of Crystal Growth   Vol. 312 ( 22 ) page: 3257-3260   2010.11

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  257. Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope

    L. Gu, Y. Yu, W. Sigle, N. Usami, S. Tsukimoto, J. Maier, Y. Ikuhara and P. A. van Aken

    Applied Physics Letters   Vol. 97 ( 21 )   2010.11

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    DOI: 10.1063/1.3518703

  258. Room-temperature electroluminescence from Si microdisks with Ge quantum dots

    J. S. Xia, Y. Takeda, N. Usami, T. Maruizumi and Y. Shiraki

    Optics Express   Vol. 18 ( 13 ) page: 13945-13950   2010.6

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  259. Growth mechanism of the Si < 110 > faceted dendrite

    K. Fujiwara, H. Fukuda, N. Usami, K. Nakajima and S. Uda

    Physical Review B   Vol. 81 ( 22 )   2010.6

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    DOI: 10.1103/PhysRevB.81.224106

  260. Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed

    I. Takahashi, N. Usami, K. Kutsukake, G. Stokkan, K. Morishita and K. Nakajima

    Journal of Crystal Growth   Vol. 312 ( 7 ) page: 897-901   2010.3

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  261. Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique

    Y. Hoshi, K. Sawano, A. Yamada, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Journal of Applied Physics   Vol. 107 ( 10 )   2010.3

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    DOI: 10.1063/1.3374688

  262. Optical anisotropies of Si grown on step-graded SiGe(110) layers

    R. E. Balderas-Navarro, L. F. Lastras-Martinez, K. Arimoto, R. Castro-Garcia, O. Villalobos-Aguilar, A. Lastras-Martinez, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    Applied Physics Letters   Vol. 96 ( 9 )   2010.3

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    DOI: 10.1063/1.3339881

  263. Formation of uniaxially strained SiGe by selective ion implantation technique

    K. Sawano, Y. Hoshi, A. Yamada, Y. Hiraoka, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Thin Solid Films   Vol. 518 ( 9 ) page: 2454-2457   2010.2

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  264. Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth

    N. Usami, R. Yokoyama, I. Takahashi, K. Kutsukake, K. Fujiwara and K. Nakajima

    Journal of Applied Physics   Vol. 107 ( 1 )   2010.1

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    DOI: 10.1063/1.3276219

  265. Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation

    Y. Hoshi, K. Sawano, A. Yamada, K. Arimoto, N. Usami, K. Nakagawa and Y. Shiraki

    Thin Solid Films   Vol. 518   page: S162-S164   2010.1

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  266. Computational Investigation of Relationship between Shear Stress and Multicrystalline Structure in Silicon

    I. Takahashi, N. Usami, K. Kutsukake, K. Morishita and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 49 ( 4 )   2010

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    DOI: 10.1143/JJAP.49.04DP01

  267. Lattice-Latching Effect in Metalorganic Vapor Phase Epitaxy Growth of InGaAsN Film Lattice-Matched to Bulk InGaAs Substrate

    S. Sanorpim, R. Katayama, K. Onabe, N. Usami and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 49 ( 4 )   2010

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    DOI: 10.1143/JJAP.49.040202

  268. Fabrication of n(+)-BaSi2/p(+)-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications

    T. Saito, Y. Matsumoto, M. Suzuno, M. Takeishi, R. Sasaki, T. Suemasu and N. Usami

    Applied Physics Express   Vol. 3 ( 2 )   2010

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    DOI: 10.1143/APEX.3.021301

  269. Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells

    Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, T. Saito, T. Suemasu, N. Usami and M. Sasase

    Japanese Journal of Applied Physics   Vol. 49   2010

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    DOI: 10.1143/JJAP.49.04DP05

  270. On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization

    M. Jung, A. Okada, T. Saito, T. Suemasu and N. Usami

    Applied Physics Express   Vol. 3 ( 9 )   2010

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    DOI: 10.1143/APEX.3.095803

  271. Growth behavior of faceted Si crystals at grain boundary formation

    K. Fujiwara, S. Tsumura, M. Tokairin, K. Kutsukake, N. Usami, S. Uda and K. Nakajima

    Journal of Crystal Growth   Vol. 312 ( 1 ) page: 19-23   2009.12

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  272. Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth

    M. Tokairin, K. Fujiwara, K. Kutsukake, N. Usami and K. Nakajima

    Physical Review B   Vol. 80 ( 17 )   2009.11

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    DOI: 10.1103/PhysRevB.80.174108

  273. Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content

    R. Nihei, N. Usami and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 48 ( 11 )   2009.11

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    DOI: 10.1143/JJAP.48.115507

  274. Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates

    K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    Solid-State Electronics   Vol. 53 ( 10 ) page: 1135-1143   2009.10

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  275. Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures

    K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Applied Physics Letters   Vol. 95   2009.9

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    DOI: 10.1063/1.3229998

  276. Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

    D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami and T. Suemasu

    Journal of Crystal Growth   Vol. 311 ( 14 ) page: 3581-3586   2009.7

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  277. Microstructures of Si multicrystals and their impact on minority carrier diffusion length

    H. Y. Wang, N. Usami, K. Fujiwara, K. Kutsukake and K. Nakajima

    Acta Materialia   Vol. 57 ( 11 ) page: 3268-3276   2009.6

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  278. Photoresponse Properties of Polycrystalline BaSi2 Films Grown on SiO2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method

    D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami and T. Suemasu

    Applied Physics Express   Vol. 2 ( 5 )   2009.5

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    DOI: 10.1143/APEX.2.051601

  279. Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots

    J. Xia, R. Tominaga, S. Fukamitsu, N. Usami and Y. Shiraki

    Japanese Journal of Applied Physics   Vol. 48 ( 2 )   2009.2

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    DOI: 10.1143/JJAP.48.022102

  280. Quantitative analysis of subgrain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance

    K. Kutsukake, N. Usami, T. Ohtaniuchi, K. Fujiwara and K. Nakajima

    Journal of Applied Physics   Vol. 105 ( 4 )   2009.2

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    DOI: 10.1063/1.3079504

  281. Floating cast method to realize high-quality Si bulk multicrystals for solar cells

    Y. Nose, I. Takahashi, W. Pan, N. Usami, K. Fujiwara and K. Nakajima

    Journal of Crystal Growth   Vol. 311 ( 2 ) page: 228-231   2009.1

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  282. Resonant photoluminescence from Ge self-assembled dots in optical microcavities

    J. S. Xia, R. Tominaga, N. Usami, S. Iwamoto, Y. Ikegami, K. Nemoto, Y. Arakawa and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 311   page: 883-887   2009

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  283. Local control of strain in SiGe by ion-implantation technique

    K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 311 ( 3 ) page: 806-808   2009

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  284. Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method

    Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Sato, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 311 ( 3 ) page: 825-828   2009

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  285. Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates

    K. Arimoto, G. Kawaguchi, K. Shimizu, M. Watanabe, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano and Y. Shiraki

    J. Cryst. Growth   Vol. 311   page: 814-818   2009

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  286. Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates

    K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    J. Cryst. Growth   Vol. 311   page: 809-813   2009

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  287. Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures

    K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano and Y. Shiraki

    J. Cryst. Growth   Vol. 311   page: 819-824   2009

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  288. Influence of growth temperature and cooling rate on the growth of Si epitaxial layer by dropping-type liquid phase epitaxy from the pure Si melt

    Z. M. Wang, K. Kutsukake, H. Kodama, N. Usami, K. Fujiwara, Y. Nose and K. Nakajima

    Journal of Crystal Growth   Vol. 310 ( 24 ) page: 5248-5251   2008.12

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  289. Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities

    I. Takahashi, N. Usami, R. Yokoyama, Y. Nose, K. Kutuskake, K. Fuilwara and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 47 ( 12 ) page: 8790-8792   2008.12

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  290. Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation

    K. Sawano, Y. Hoshi, A. Yamada, Y. Hiraoka, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Applied Physics Express   Vol. 1 ( 12 )   2008.12

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    DOI: 10.1143/APEX.1.121401

  291. Room-temperature light-emission from Ge quantum dots in photonic crystals

    J. Xia, K. Nemoto, Y. Ikegami, N. Usami, Y. Nakata and Y. Shiraki

    Thin Solid Films   Vol. 517 ( 1 ) page: 125-127   2008.11

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  292. Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials

    N. Usami, R. Nihei, Y. Azuma, I. Yonenaga, K. Nakajima, K. Sawano and Y. Shiraki

    Thin Solid Films   Vol. 517 ( 1 ) page: 14-16   2008.11

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  293. Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition

    M. Mitsui, M. Tamoto, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Sato, N. Usami, K. Sawano and Y. Shiraki

    Thin Solid Films   Vol. 517 ( 1 ) page: 254-256   2008.11

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  294. Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer

    K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    Thin Solid Films   Vol. 517 ( 1 ) page: 235-238   2008.11

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  295. Vacancy formation during oxidation of silicon crystal surface

    M. Suezawa, Y. Yamamoto, M. Suemitsu, N. Usami and I. Yonenaga

    Applied Physics Letters   Vol. 93 ( 10 )   2008.9

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    DOI: 10.1063/1.2979708

  296. Development of thin SiGe relaxed layers with high-Ge composition by ion implantation method and application to strained Ge channels

    Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Satoh, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa and Y. Shiraki

    Applied Physics Express   Vol. 1 ( 8 )   2008.8

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    DOI: 10.1143/APEX.1.081401

  297. Growth mechanism of Si-faceted dendrites

    K. Fujiwara, K. Maeda, N. Usami and K. Nakajima

    Physical Review Letters   Vol. 101 ( 5 )   2008.8

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    DOI: 10.1103/PhysRevLett.101.055503

  298. Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals

    N. Usami, K. Kutsukake, K. Fujiwara, I. Yonenaga and K. Nakajima

    Applied Physics Express   Vol. 1 ( 7 )   2008.7

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    DOI: 10.1143/APEX.1.075001

  299. Acceptorlike behavior of defects in SiGe alloys grown by molecular beam epitaxy

    M. Satoh, K. Arimoto, K. Nakagawa, S. Koh, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    Japanese Journal of Applied Physics   Vol. 47 ( 6 ) page: 4630-4633   2008.6

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  300. In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts

    K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose, A. Nomura, T. Shishido and K. Nakajima

    Acta Materialia   Vol. 56 ( 11 ) page: 2663-2668   2008.6

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  301. On effects of gate bias on hole effective mass and mobility in strained-Ge channel structures

    K. Sawano, Y. Kunishi, Y. Satoh, K. Toyama, K. Arimoto, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki

    Applied Physics Express   Vol. 1 ( 1 )   2008.1

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    DOI: 10.1143/APEX.1.011401

  302. Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures

    K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   Vol. 40 ( 6 ) page: 2122-2124   2008

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  303. Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films

    K. Ohdaira, Y. Abe, M. Fukuda, S. Nishizaki, N. Usami, K. Nakajima, T. Karasawa, T. Torikai and H. Matsumura

    THIN SOLID FILMS   Vol. 516 ( 5 ) page: 600-603   2008

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  304. Functional enhancement of metal-semiconductor-metal infrared photodetectors on heteroepitaxial SiGe-on-Si using the anodic oxidation/passivation method

    R. W. Chuang, Z. L. Liao, H. T. Chiang and N. Usami

    Jpn. J. Appl. Phys.   Vol. 47   page: 2927-2931   2008

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  305. Modification of local structures in multicrystals revealed by spatially resolved x-ray rocking curve analysis

    N. Usami, K. Kutsukake, K. Fujiwara and K. Nakajima

    Journal of Applied Physics   Vol. 102 ( 10 )   2007.11

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    DOI: 10.1063/1.2816207

  306. High-quality polycrystalline silicon films with minority carrier lifetimes over 5 mu s formed by flash lamp annealing of precursor amorphous silicon films prepared by catalytic chemical vapor deposition

    K. Ohdaira, S. Nishizaki, Y. Endo, T. Fujiwara, N. Usami, K. Nakajima and H. Matsumura

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 46 ( 11 ) page: 7198-7203   2007.11

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  307. Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks

    J. S. Xia, K. Nemoto, Y. Ikegami, Y. Shiraki and N. Usami

    Applied Physics Letters   Vol. 91 ( 1 )   2007.7

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    DOI: 10.1063/1.2754356

  308. SiGe double barrier resonant tunneling diodes on bulk SiGe substrates with high peak-to-valley current ratio

    S. Tsujino, N. Usami, A. Weber, G. Mussler, V. Shushunova, D. Grutzmacher, Y. Azuma and K. Nakajima

    Applied Physics Letters   Vol. 91   2007.7

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    DOI: 10.1063/1.2756363

  309. Formation mechanism of parallel twins related to Si-facetted dendrite growth

    K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose and K. Nakajima

    Scripta Materialia   Vol. 57 ( 2 ) page: 81-84   2007.7

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  310. Application of Czochralski-grown SiGe bulk crystal as a substrate for luminescent strained quantum wells

    N. Usami, R. Nihei, I. Yonenaga, Y. Nose and K. Nakajima

    Applied Physics Letters   Vol. 90 ( 18 )   2007.4

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    DOI: 10.1063/1.2735286

  311. Improvement in the conversion efficiency of single-junction SiGe solar cells by intentional introduction of the compositional distribution

    M. Tayanagi, N. Usami, W. Pan, K. Ohdaira, K. Fujiwara, Y. Nose and K. Nakajima

    Journal of Applied Physics   Vol. 101 ( 5 )   2007.3

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    DOI: 10.1063/1.2709575

  312. Influence of structural imperfection of Sigma 5 grain boundaries in bulk multicrystalline Si on their electrical activities

    K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose and K. Nakajima

    Journal of Applied Physics   Vol. 101 ( 6 )   2007.3

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    DOI: 10.1063/1.2710348

  313. Step-induced anisotropic growth of pentacene thin film crystals on a hydrogen-terminated Si(111) surface

    S. Nishikata, G. Sazaki, T. Takeuchi, N. Usami, S. Suto and K. Nakajima

    Crystal Growth & Design   Vol. 7 ( 2 ) page: 439-444   2007.2

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  314. Modification of local structure and its influence on electrical activity of near (310) Sigma 5 grain boundary in bulk silicon

    K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose, T. Sugawara, T. Shishido and K. Nakajima

    Materials Transactions   Vol. 48 ( 2 ) page: 143-147   2007.2

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  315. Effect of the compositional distribution on the photovoltaic power conversion of SiGe solar cells

    N. Usami, W. Pan, K. Fujiwara, M. Tayanagi, K. Ohdaira and K. Nakajima

    Solar Energy Materials and Solar Cells   Vol. 91   page: 123-128   2007.1

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  316. Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer

    N. Usami, K. Kutsukake, N. Kazuo, S. Amtablian, A. Fave and M. Lemiti

    Applied Physics Letters   Vol. 90 ( 3 )   2007.1

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    DOI: 10.1063/1.2433025

  317. Fabrication of Ge channels with extremely high compressive strain and their magnetotransport properties

    K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 301   page: 339-342   2007

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  318. Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(110) substrates by gas-source MBE

    K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima

    J. Cryst. Growth   Vol. 301   page: 343-348   2007

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  319. Annihilation of acceptor-hydrogen pairs in Si crystals due to electron irradiation

    M. Suezawa, K. Koilma, A. Kasuya, I. Yonenaga and N. Usami

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 45 ( 12 ) page: 9162-9166   2006.12

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  320. Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature

    J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami and Y. Nakata

    Applied Physics Letters   Vol. 89 ( 20 )   2006.11

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    DOI: 10.1063/1.2386915

  321. Magnetotransport properties of Ge channels with extremely high compressive strain

    K. Sawano, Y. Kunishi, Y. Shiraki, K. Toyama, T. Okamoto, N. Usami and K. Nakagawa

    Applied Physics Letters   Vol. 89 ( 16 )   2006.10

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    DOI: 10.1063/1.2354467

  322. Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting

    K. Fujiwara, W. Pan, N. Usami, K. Sawada, M. Tokairin, Y. Nose, A. Nomura, T. Shishido and K. Nakajima

    Acta Materialia   Vol. 54 ( 12 ) page: 3191-3197   2006.7

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  323. High sensitive imaging of atomic arrangement of Ge clusters buried in a Si crystal by X-ray fluorescence holography

    S. Kusano, S. Nakatani, K. Sumitani, T. Takahashi, Y. Yoda, N. Usami and Y. Shiraki

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 45 ( 6A ) page: 5248-5253   2006.6

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  324. Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate

    N. Usami, Y. Nose, K. Fujiwara and K. Nakajima

    Applied Physics Letters   Vol. 88   2006.5

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    DOI: 10.1063/1.2735286

  325. Realization of bulk multicrystalline silicon with controlled grain boundaries by utilizing spontaneous modification of grain boundary configuration

    N. Usami, K. Kutsukake, T. Sugawara, K. Fujwara, W. Pan, Y. Nose, T. Shishido and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 45 ( 3A ) page: 1734-1737   2006.3

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  326. High-efficiency concave and conventional solar cell integration system using focused reflected light

    K. Ohdaira, K. Fujiwara, W. Pan, N. Usami and K. Nakajiima

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 45 ( 3A ) page: 1664-1667   2006.3

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  327. Intermixing of Ge and Si during exposure of GeH4 on Si

    G. Watari, N. Usami, Y. Nose, K. Fujiwara, G. Sazaki and K. Nakajima

    THIN SOLID FILMS   Vol. 508   page: 163-165   2006

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  328. Strain field and related roughness formation in SiGe relaxed buffer layers

    K. Sawano, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    THIN SOLID FILMS   Vol. 508 ( 1-2 ) page: 117-119   2006

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  329. Influence of stacked Ge islands on the dark current-voltage characteristics and the conversion efficiency of the solar cells

    A. Alguno, N. Usami, K. Ohdaira, W. G. Pan, M. Tayanagi and K. Nakajima

    Thin Solid Films   Vol. 508   page: 402-405   2006

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  330. Determination of lattice parameters of SiGe/Si(110) heterostructures

    K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, S. Koh and N. Usami

    Thin Solid Films   Vol. 508   page: 132-135   2006

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  331. Directional growth method to obtain high quality polycrystalline silicon from its melt

    K. Fujiwara, W. Pan, K. Sawada, M. Tokairin, N. Usami, Y. Nose, A. Nomura, T. Shishido and K. Nakajima

    J. Cryst. Growth   Vol. 292   page: 282-285   2006

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  332. Thickness dependence of strain field distribution in SiGe relaxed buffer layers

    K. Sawano, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 44   page: 8445-8447   2005.12

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  333. Analysis of the dark-current density in solar cells based on multicrystalline SiGe

    K. Ohdaira, N. Usami, W. G. Pan, K. Fujiwara and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 44 ( 11 ) page: 8019-8022   2005.11

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  334. Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition

    N. Usami, M. Kitamura, K. Obara, Y. Nose, T. Shishido and K. Nakajima

    Journal of Crystal Growth   Vol. 284   page: 57-64   2005.10

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  335. Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent

    Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima and T. Ujihara

    Journal of Applied Physics   Vol. 98 ( 7 )   2005.10

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    DOI: 10.1063/1.2061891

  336. Changes in elastic deformation of strained si by microfabrication (vol 8, pg 181, 2005)

    K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami

    Materials Science in Semiconductor Processing   Vol. 8 ( 6 ) page: 652-652   2005.10

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  337. Liquid phase epitaxial growth of Si layers on Si thin substrates from Si pure melts under near-equilibrium conditions

    K. Nakajima, K. Fujiwara, Y. Nose and N. Usami

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 44 ( 7A ) page: 5092-5095   2005.7

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  338. Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique

    M. Kitamura, N. Usami, T. Sugawara, K. Kutsukake, K. Fujiwara, Y. Nose, T. Shishido and K. Nakajima

    Journal of Crystal Growth   Vol. 280   page: 419-424   2005.7

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  339. Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study

    T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima

    Thin Solid Films   Vol. 476 ( 1 ) page: 206-209   2005.4

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  340. A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal

    Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara and K. Nakajima

    Journal of Crystal Growth   Vol. 276   page: 393-400   2005.4

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  341. Structural properties of directionally grown polycrystalline SiGe for solar cells

    K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima

    Journal of Crystal Growth   Vol. 275   page: 467-473   2005.3

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  342. On the origin of improved conversion efficiency of solar cells based on SiGe with compositional distribution

    N. Usami, K. Fujiwara, W. G. Pan and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   Vol. 44 ( 2 ) page: 857-860   2005.2

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  343. Growth of ZnO/MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect

    B. P. Zhang, N. T. Binh, K. Wakatsuki, C. Y. Liu and Y. Segawa and N. Usami

    Applied Physics Letters   Vol. 86 ( 3 )   2005.1

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    DOI: 10.1063/1.1850594

  344. Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate

    G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima

    Journal of Crystal Growth   Vol. 273   page: 594-602   2005.1

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  345. Floating zone growth of Si bicrystals using seed crystals with artificially designed grain boundary configuration

    N. Usami, M. Kitamura, T. Sugawara, K. Kutsukake, K. Ohdaira, Y. Nose, K. Fujiwara, T. Shishido and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters & Express Letters   Vol. 44 ( 24-27 ) page: L778-L780   2005

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  346. Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures

    K. Sawano, N. Usami, K. Arimoto, S. Koh, K. Nakagawa and Y. Shiraki

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 8 ( 1-3 ) page: 177-180   2005

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  347. Strain-field evaluation of strain-relaxed thin SiGe layers fabricated by ion implantation method

    K. Sawano, Y. Ozawa, A. Fukuoto, N. Usami, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa and Y. Shiraki

    Japanese Journal of Applied Physics Part 2-Letters & Express Letters   Vol. 44 ( 42-45 ) page: L1316-L1319   2005

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  348. Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams

    K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki

    International Journal of Materials & Product Technology   Vol. 22   page: 185-212   2005

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  349. Changes in elastic deformation of strained Si by microfabrication

    K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami

    Materials Science in Semiconductor Processing   Vol. 8   page: 181-185   2005

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  350. Low-temperature growth of single-crystalline ZnO tubes on sapphire(0001) substrates

    B. P. Zhang, N. T. Binh, K. Wakatsuki, N. Usami and Y. Segawa

    Applied Physics a-Materials Science & Processing   Vol. 79 ( 7 ) page: 1711-1714   2004.11

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  351. Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

    K. Sawano, S. Koh, Y. Shiraki, Y. Ozawa, T. Hattori, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa and N. Usami

    Applied Physics Letters   Vol. 85 ( 13 ) page: 2514-2516   2004.9

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  352. On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates

    K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki and K. Nakajima

    Applied Physics Letters   Vol. 85 ( 8 ) page: 1335-1337   2004.8

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  353. Low-temperature growth of ZnO nanostructure networks

    B. P. Zhang, K. Wakatsuki, N. T. Binh, Y. Segawa and N. Usami

    Journal of Applied Physics   Vol. 96 ( 1 ) page: 340-343   2004.7

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  354. Pressure-dependent ZnO nanocrsytal growth in a chemical vapor deposition process

    B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki and H. Koinuma

    Journal of Physical Chemistry B   Vol. 108   page: 10899-10902   2004.7

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  355. Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution

    W. G. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima and R. Shimokawa

    Journal of Applied Physics   Vol. 96 ( 2 ) page: 1238-1241   2004.7

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  356. Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation

    Y. Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara and T. Ujihara

    Japanese Journal of Applied Physics Part 2-Letters & Express Letters   Vol. 43 ( 7A ) page: L907-L909   2004.7

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  357. Structural and optical properties of ZnO epitaxial films grown on Al2O3 (1120) substrates by metalorganic chemical vapor deposition

    N. T. Binh, B. P. Zhang, C. Y. Liu, K. Wakatsuki, Y. Segawa, N. Usami, Y. Yamada, M. Kawasaki and H. Koinuma

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 43 ( 7A ) page: 4110-4113   2004.7

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  358. Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy

    T. Ujihara, E. Kanda, K. Obara, K. Fujiwara, N. Usami, G. Sazaki, A. Alguno, T. Shishido and K. Nakajima

    Journal of Crystal Growth   Vol. 266 ( 4 ) page: 467-474   2004.6

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  359. Grain growth behaviors of polycrystalline silicon during melt growth processes

    K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima

    Journal of Crystal Growth   Vol. 266 ( 4 ) page: 441-448   2004.6

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  360. Formation of highly aligned ZnO tubes on sapphire (0001) substrates

    B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki and H. Koinuma

    Applied Physics Letters   Vol. 84 ( 20 ) page: 4098-4100   2004.3

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  361. Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition

    B. P. Zhang, K. Wakatsuki, N. T. Binh, N. Usami and Y. Segawa

    Thin Solid Films   Vol. 449   page: 12-19   2004.2

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  362. Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe

    N. Usami, W. G. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 43 ( 2B ) page: L250-L252   2004.2

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  363. In situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy

    G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima

    Journal of Crystal Growth   Vol. 262   page: 536-542   2004.2

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  364. Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate

    G. Sazaki, T. Fujino, J. T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, Y. Takahashi, E. Matsubara, T. Sakurai and K. Nakajima

    Journal of Crystal Growth   Vol. 262   page: 196-201   2004.2

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  365. In-situ observations of melt growth behavior of polycrystalline silicon

    K. Fujiwara, Y. Obinata, T. Ujhara, N. Usami, G. Sazaki and K. Nakajima

    Journal of Crystal Growth   Vol. 262   page: 124-129   2004.2

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  366. Low-temperature growth of ZnO epitaxial films by metal organic chemical vapor deposition

    B. P. Zhang, N. T. Binh, K. Wakatsuki, N. Usami and Y. Segawa

    Applied Physics a-Materials Science & Processing   Vol. 78 ( 1 ) page: 25-28   2004.1

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  367. Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations

    K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki and T. Shishido

    Journal of Crystal Growth   Vol. 260   page: 372-383   2004.1

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  368. Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime

    N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki and K. Nakajima

    THIN SOLID FILMS   Vol. 451   page: 604-607   2004

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  369. Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy

    T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima

    MATERIALS SCIENCE FORUM   Vol. 457-460   page: 633-636   2004

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  370. Molten metal flux growth and properties of CrSi2

    T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima

    JOURNAL OF ALLOYS AND COMPOUNDS   Vol. 383   page: 319-321   2004

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  371. Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

    K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang and Y. Segawa

    Appl. Surf. Sci.   Vol. 224 ( 1-4 ) page: 95-98   2004

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  372. Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer

    A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y. Shiraki

    Applied Physics Letters   Vol. 84 ( 15 ) page: 2802-2804   2004

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  373. High-temperature solution growth and characterization of chromium disilicide

    T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. H. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, Y. Murakami, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y. Yokoyama, S. Kohiki, Y. Kawazoe and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 42 ( 12 ) page: 7292-7293   2003.12

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  374. In-plane strain fluctuation in strained-Si/SiGe heterostructures

    K. Sawano, S. Koh, Y. Shiraki, N. Usami and K. Nakagawa

    Applied Physics Letters   Vol. 83 ( 21 ) page: 4339-4341   2003.11

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  375. Optical properties of ZnO rods formed by metalorganic chemical vapor deposition

    B. P. Zhang, N. T. Binh, Y. Segawa, K. Wakatsuki and N. Usami

    Applied Physics Letters   Vol. 83 ( 8 ) page: 1635-1637   2003.8

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  376. Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure

    A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima and Y. Shiraki

    Applied Physics Letters   Vol. 83 ( 6 ) page: 1258-1260   2003.8

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  377. Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix

    N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki and K. Nakajima

    Journal of Applied Physics   Vol. 94 ( 2 ) page: 916-920   2003.7

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  378. Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals

    Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Matsui, T. Ujihara, K. Fujiwara, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 254   page: 188-195   2003.6

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  379. Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature

    Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Murakami and K. Nakajima

    Journal of Crystal Growth   Vol. 250   page: 298-304   2003.4

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  380. In-plane orientation and polarity of ZnO epitaxial films on As-polished sapphire (alpha-Al2O3) (0001) substrates grown by metal organic chemical vapor deposition

    B. P. Zhang, L. Manh, K. Wakatsuki, K. Tamura, T. Ohnishi, M. Lippma, N. Usami, M. Kawasaki, H. Koinuma and Y. Segawa

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 42 ( 3B ) page: L264-L266   2003.3

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  381. High-quality crystalline silicon layer grown by liquid phase epitaxy method at low growth temperature

    T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 42 ( 3A ) page: L217-L219   2003.3

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  382. Fabrication of SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate

    K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, B. P. Zhang, Y. Segawa and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 42 ( 3A ) page: L232-L234   2003.3

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  383. Epitaxial growth and polarity of ZnO films on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition

    B. P. Zhang, L. H. Manh, K. Wakatsuki, T. Ohnishi, M. Lippmaa, N. Usami, M. Kawasaki and Y. Segawa

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 42   page: 2291-2295   2003

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  384. Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures

    K. Sawano, K. Arimoto, Y. Hirose, S. Koh, N. Usami, K. Nakagawa, T. Hattori and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 251 ( 1-4 ) page: 693-696   2003

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  385. 3D atomic imaging of SiGe system by X-ray fluorescence holography

    K. Hayashi, Y. Takahashi, E. Matsubara, K. Nakajima and N. Usami

    J. Materials Science: Materials in Electronics   Vol. 14   page: 459-462   2003

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  386. Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution

    N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami and K. Nakajima

    Journal of Applied Physics   Vol. 92 ( 12 ) page: 7098-7101   2002.12

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  387. In situ observations of crystal growth behavior of silicon melt

    K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa and S. Mizoguchi

    Journal of Crystal Growth   Vol. 243 ( 2 ) page: 275-282   2002.8

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  388. Evidence of the presence of built-in strain in multicrystalline SiGe with large compositional distribution

    N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 41 ( 7A ) page: 4462-4465   2002.7

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  389. Simultaneous in situ measurement of solute and temperature distributions in the alloy solutions

    T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 242   page: 313-320   2002.7

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  390. Preparation of a TiO2 film coated Si device for photo-decomposition of water by CVD method using Ti(OPri)(4)

    N. Sato, K. Nakajima, N. Usami, H. Takahashi, A. Muramatsu and E. Matsubara

    Materials Transactions   Vol. 43 ( 7 ) page: 1533-1536   2002.7

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  391. Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells

    K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido

    Solar Energy Materials and Solar Cells   Vol. 73 ( 3 ) page: 305-320   2002.7

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  392. New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law

    T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 241 ( 3 ) page: 387-394   2002.6

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  393. Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals

    K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki and T. Shishido

    Journal of Crystal Growth   Vol. 240   page: 373-381   2002.5

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  394. Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications

    K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido

    Solar Energy Materials and Solar Cells   Vol. 72   page: 93-100   2002.4

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  395. In-situ monitoring system of the position and temperature at the crystal-solution interface

    G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami and K. Nakajima

    Journal of Crystal Growth   Vol. 236   page: 125-131   2002.3

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  396. Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution

    N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, H. Yaguchi, Y. Murakami and K. Nakajima

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 41 ( 1AB ) page: L37-L39   2002.1

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  397. In situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity

    G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, K. Fujiwara, N. Usami and K. Nakajima

    Journal of Crystal Growth   Vol. 234   page: 516-522   2002.1

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  398. Raman scattering and x-ray absorption studies of Ge-Si nanocrystallization

    A. Kolobov, H. Oyanagi, N. Usami, S. Tokumitsu, T. Hattori, S. Yamasaki, K. Tanaka, S. Ohtake and Y. Shiraki

    Applied Physics Letters   Vol. 80 ( 3 ) page: 488-490   2002.1

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  399. Effect of Si diffusion on growth, parameters and photoluminescence of GeSi/Si(001) self-assembled islands

    M. Y. Valakh, N. V. Vostokov, S. A. Gusev, Y. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov, M. V. Stepikhova, N. Usami, Y. Shiraki and V. A. Yukhymchuk

    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA   Vol. 66   page: 161-164   2002

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  400. Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami and K. Nakajima

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   Vol. 89   page: 364-367   2002

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  401. Evaluation of the diffusion coefficients in liquid GaGe binary alloys using a novel method based on Fick's first law

    T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima

    JOURNAL OF NON-CRYSTALLINE SOLIDS   Vol. 312   page: 196-202   2002

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  402. Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands

    A. V. Novikov, B. A. Andreev, N. V. Vostokov, Y. N. Drozdov, Z. F. Krasilnik, D. N. Lobanov, L. D. Moldavskaya, A. N. Yablonskiy, M. Miura, N. Usami, Y. Shiraki, M. Y. Valakh, N. Mestres and J. Pascual

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   Vol. 89   page: 62-65   2002

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  403. Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K. Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa and S. Kodama

    Semiconductor Science and Technology   Vol. 16 ( 8 ) page: 699-703   2001.8

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  404. Physical model for the evaluation of solid-liquid interfacial tension in silicon

    T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami and K. Nakajima

    Journal of Applied Physics   Vol. 90 ( 2 ) page: 750-755   2001.7

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  405. Fabrication of strain-balanced Si/Si1-xGex multiple quantum wells on Si1-yGey virtual substrates and their optical properties

    K. Kawaguchi, Y. Shiraki, N. Usami, J. Zhang, N. J. Woods, G. Breton and G. Parry

    Applied Physics Letters   Vol. 79 ( 3 ) page: 344-346   2001.7

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  406. Growth of SixGe1-x (x=0.15) bulk crystal with uniform composition utilizing in situ monitoring of the crystal-solution interface

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 40 ( 6A ) page: 4141-4144   2001.6

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  407. Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt inter-face using in situ monitoring system

    Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara and K. Nakajima

    Journal of Crystal Growth   Vol. 224   page: 204-211   2001.4

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  408. The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures

    N. V. Vostokov, S. A. Gusev, Y. N. Drozdov, Z. F. Krasilnik, D. N. Lobanov, N. Mesters, M. Miura, L. D. Moldavskaya, A. V. Novikov, J. Pascual, V. V. Postnikov, Y. Shiraki, V. A. Uakhimchuk, N. Usami and M. Y. Valakh

    PHYSICS OF LOW-DIMENSIONAL STRUCTURES   Vol. 41337   page: 295-301   2001

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  409. Modification of the growth mode of Ge on Si(100) in the presence of buried Ge islands

    N. Usami, M. Miura, Y. Ito, Y. Araki, K. Nakajima and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 227   page: 782-785   2001

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  410. Observation of negatively charged excitons and excited states of multi-excitons in quantum dots embedded in modulation doping structures

    K. Ohdaira, N. Usami, K. Ota and Y. Shiraki

    PHYSICA E   Vol. 11 ( 2-3 ) page: 68-71   2001

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  411. Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies

    K. Nakajima, T. Ujihara, G. Sazaki and N. Usami

    Journal of Crystal Growth   Vol. 220 ( 4 ) page: 413-424   2000.12

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  412. SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, S. Koh, Y. Shiraki, B. Zhang, Y. Segawa and S. Kodama

    Applied Physics Letters   Vol. 77 ( 22 ) page: 3565-3567   2000.11

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  413. In situ measurement of composition in high-temperature solutions by X-ray fluorescence spectrometry

    T. Ujihara, G. Sazaki, S. Miyashita, N. Usami and K. Nakajima

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Vol. 39 ( 10 ) page: 5981-5982   2000.10

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  414. Drastic increase of the density of Ge islands by capping with a thin Si layer

    N. Usami, M. Miura, Y. Ito, Y. Araki and Y. Shiraki

    Applied Physics Letters   Vol. 77 ( 2 ) page: 217-219   2000.7

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  415. Modification of the growth mode of Ge on Si by buried Ge islands

    N. Usami, Y. Araki, Y. Ito, M. Miura and Y. Shiraki

    Applied Physics Letters   Vol. 76 ( 25 ) page: 3723-3725   2000.6

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  416. Optical investigation of modified Stranski-Krastanov growth mode in the stacking of self-assembled Ge islands

    N. Usami and Y. Shiraki

    THIN SOLID FILMS   Vol. 369   page: 108-111   2000

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  417. Microscopic probing of localized excitons in quantum wells

    N. Usami, K. Ota, K. Ohdaira, Y. Shiraki, T. Hasche, V. Lyssenko and K. Leo

    INSTITUTE OF PHYSICS CONFERENCE SERIES   ( 166 ) page: 99-102   2000

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  418. Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer

    H. Takamiya, M. Miura, N. Usami, T. Hattori and Y. Shiraki

    THIN SOLID FILMS   Vol. 369 ( 1-2 ) page: 84-87   2000

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  419. Growth and characterization of Ge-70(n)/Ge-74(n) isotope superlattices

    K. Morita, K. M. Itoh, J. Muto, K. Mizoguchi, N. Usami, Y. Shiraki and E. E. Haller

    THIN SOLID FILMS   Vol. 369 ( 1-2 ) page: 405-408   2000

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  420. Formation of relaxed SiGe films on Si by selective epitaxial growth

    K. Kawaguchi, N. Usami and Y. Shiraki

    Thin Solid Films   Vol. 369   page: 126-129   2000

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  421. Correlation between electronic states and optical properties in indirect GaAsP/GaP quantum wells with insertion of an ultrathin AlP layer

    K. Arimoto, N. Usami and Y. Shiraki

    Physica E   Vol. 8   page: 323-327   2000

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  422. Effect of the insertion of an ultrathin AlP layer on the optical properties of GaAsP/GaP quantum wells

    K. Arimoto, T. Sugita, N. Usami and Y. Shiraki

    Physical Review B   Vol. 60 ( 19 ) page: 13735-13739   1999.11

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  423. Magnetophotoluminescence spectroscopy of AlGaP-based neighboring confinement structures

    N. Usami, T. Sugita, T. Ohta, F. Issiki, Y. Shiraki, K. Uchida and N. Miura

    Physical Review B   Vol. 60 ( 3 ) page: 1879-1883   1999.7

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  424. Study of a pure-Ge/Si short-period superlattice by x-ray double crystal diffraction

    Z. G. Ji, H. M. Lu, S. G. Zhang, D. L. Que, N. Usami, H. Sunamura and Y. Shiraki

    Journal of Materials Synthesis and Processing   Vol. 7 ( 3 ) page: 205-207   1999.5

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  425. Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy

    E. S. Kim, N. Usami and Y. Shiraki

    Semiconductor Science and Technology   Vol. 14 ( 3 ) page: 257-265   1999.3

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  426. Optical characterization of strain-induced structural modification in SiGe-based heterostructures

    N. Usami, K. Leo and Y. Shiraki

    Journal of Applied Physics   Vol. 85 ( 4 ) page: 2363-2366   1999.2

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  427. Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications

    L. K. Bera, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti

    Journal of Electronic Materials   Vol. 28 ( 2 ) page: 98-104   1999.2

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  428. Photoluminescence study of InP/GaP highly strained quantum wells

    T. Kimura, H. Yaguchi, N. Usami, K. Onabe and Y. Shiraki

    INSTITUTE OF PHYSICS CONFERENCE SERIES   Vol. 162   page: 511-516   1999

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  429. Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy

    S. J. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki and R. Ito

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 37 ( 12B ) page: L1493-L1496   1998.12

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  430. Epitaxial growth and photoluminescence of Si/pure-Ge/Si quantum structures on Si(311) substrates

    K. Amano, M. Kobayashi, A. Ohga, T. Hattori, N. Usami and Y. Shiraki

    Semiconductor Science and Technology   Vol. 13 ( 11 ) page: 1277-1283   1998.11

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  431. Wavy interface morphologies in strained Si1-xGex/Si multilayers on vicinal Si(111) substrates

    J. H. Li, Y. Yamaguchi, H. Hashizume, N. Usami and Y. Shiraki

    Journal of Physics-Condensed Matter   Vol. 10 ( 39 ) page: 8643-8652   1998.10

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  432. Photoluminescence and Raman scattering of pure germanium/silicon short period superlattice

    Z. G. Ji, N. Usami, H. Sunamura and Y. Shiraki

    Acta Physica Sinica-Overseas Edition   Vol. 7 ( 8 ) page: 608-612   1998.8

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  433. Electrical properties of N2O/NH3 plasma grown oxynitride on strained-Si

    L. K. Bera, S. K. Ray, M. Mukhopadhyay, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti

    Ieee Electron Device Letters   Vol. 19 ( 8 ) page: 273-275   1998.8

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  434. Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties

    E. S. Kim, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 72   page: 1617-1619   1998.3

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  435. In-plane potential modulation in tensilely strained AlGaP-based neighboring confinement structure

    N. Usami, T. Sugita, T. Ohta, H. Ito, K. Uchida, Y. Shiraki, F. Minami and N. Miura

    PHYSICA E   Vol. 2   page: 883-886   1998

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  436. Photoluminescence from pure-Ge/pure-Si neighboring confinement structure

    N. Usami, M. Miura, H. Sunamura and Y. Shiraki

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 16   page: 1710-1712   1998

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  437. Exciton diffusion dynamics in quantum nanostructures on V-groove patterned substrates

    N. Usami, Y. Shiraki, W. Pan, H. Yaguchi and K. Onabe

    Superlattices and Microstructures   Vol. 23 ( 2 ) page: 395-400   1998

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  438. Control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells and selective epitaxy on patterned substrates

    N. Usami, J. Arai, E. S. Kim, K. Ota, T. Hattori and Y. Shiraki

    PHYSICA E   Vol. 2   page: 137-141   1998

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  439. Enhanced no-phonon transition in indirect GaAsP/GaP quantum wells by insertion of monolayer AlP for electron localization

    T. Sugita, N. Usami and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 188 ( 1-4 ) page: 323-327   1998

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  440. New strain-relieving microstructure in pure-Ge/Si short-period superlattices

    H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 16 ( 3 ) page: 1595-1598   1998

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  441. Magneto-photoluminescence spectra of GaP/AlP short-period superlattices in high magnetic fields and uniaxial pressures

    K. Uchida, N. Miura, T. Sugita, F. Issiki, N. Usami and Y. Shiraki

    PHYSICA B   Vol. 251   page: 909-913   1998

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  442. Temperature dependence of microscopic photoluminescence spectra of quantum dots and quantum wells

    K. Ota, N. Usami and Y. Shiraki

    PHYSICA E   Vol. 2 ( 1-4 ) page: 573-577   1998

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  443. Effect of tensile strain on optical properties of AlGaP-based neighboring confinement structure

    T. Ohta, N. Usami, F. Issiki and Y. Shiraki

    Superlattices and Microstructures   Vol. 23 ( 1 ) page: 97-102   1998

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  444. Spectroscopic study of Si-based quantum wells with neighbouring confinement structure

    N. Usami, Y. Shiraki and S. Fukatsu

    Semiconductor Science and Technology   Vol. 12 ( 12 ) page: 1596-1602   1997.12

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  445. Optical investigation of growth mode of Ge thin films on Si(110) substrates

    J. Arai, A. Ohga, T. Hattori, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 71 ( 6 ) page: 785-787   1997.8

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  446. Effects of tensile strain on the optical properties of an AlGaP-based neighbouring confinement structure

    T. Ohta, N. Usami, F. Issiki and Y. Shiraki

    Semiconductor Science and Technology   Vol. 12 ( 7 ) page: 881-887   1997.7

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  447. Interfacial roughness of Si1-xGex/Si multilayer structures on Si(111) probed by x-ray scattering

    P. M. Reimer, J. H. Li, Y. Yamaguchi, O. Sakata, H. Hashizume, N. Usami and Y. Shiraki

    Journal of Physics-Condensed Matter   Vol. 9 ( 22 ) page: 4521-4533   1997.6

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  448. Precise control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells

    J. Arai, N. Usami, K. Ota, Y. Shiraki, A. Ohga and T. Hattori

    Applied Physics Letters   Vol. 70 ( 22 ) page: 2981-2983   1997.6

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  449. Photoluminescence study of the optical properties of SiGe quantum wells on separation by implanted oxygen substrates

    D. K. Nayak, N. Usami, S. Fukatsu and Y. Shiraki

    Journal of Applied Physics   Vol. 81 ( 8 ) page: 3484-3489   1997.4

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  450. Anomalous luminescence peak shift of SiGe/Si quantum well induced by self-assembled Ge islands

    E. S. Kim, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 70 ( 3 ) page: 295-297   1997.1

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  451. Oxidation of strained Si in a microwave electron cyclotron resonance plasma

    L. K. Bera, M. Mukhopadhyay, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti

    Applied Physics Letters   Vol. 70 ( 2 ) page: 217-219   1997.1

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  452. Electrical properties of oxides grown on strained Si using microwave N2O plasma

    L. K. Bera, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti

    Applied Physics Letters   Vol. 70 ( 1 ) page: 66-68   1997.1

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  453. Anomalous photoluminescence of pure-Ge/Si type-II coupled quantum wells (II-CQWs)

    H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu

    THIN SOLID FILMS   Vol. 294 ( 1-2 ) page: 336-339   1997

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  454. Luminescence study on Ge islands as stressors on Si1-xGex/Si quantum well

    E. S. Kim, N. Usami, H. Sunamura, S. Fukatsu and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 175   page: 519-523   1997

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  455. Time-resolved photoluminescence study on AlxGa1-xAs spontaneous vertical quantum well structures

    N. Usami, W. G. Pan, H. Yaguchi, R. Ito, K. Onabe, H. Akiyama and Y. Shiraki

    Applied Physics Letters   Vol. 68 ( 23 ) page: 3221-3223   1996.6

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  456. Ultrashort lifetime photocarriers in Ge thin films

    N. Sekine, K. Hirakawa, F. Sogawa, Y. Arakawa, N. Usami, Y. Shiraki and T. Katoda

    Applied Physics Letters   Vol. 68 ( 24 ) page: 3419-3421   1996.6

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  457. Role of heterointerface on enhancement of no-phonon luminescence in Si-based neighboring confinement structure

    N. Usami, Y. Shiraki and S. Fukatsu

    Applied Physics Letters   Vol. 68 ( 17 ) page: 2340-2342   1996.4

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  458. Observation of lateral confinement effect in Ge quantum wires self-aligned at step edges on Si(100)

    H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu

    Applied Physics Letters   Vol. 68 ( 13 ) page: 1847-1849   1996.3

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  459. Exciton diffusion dynamics in SiGe/Si quantum wells on a V-groove patterned Si substrate

    N. Usami, H. Akiyama, Y. Shiraki and S. Fukatsu

    SOLID-STATE ELECTRONICS   Vol. 40   page: 733-736   1996

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  460. Formation and optical properties of SiGe/Si quantum structures

    Y. Shiraki, H. Sunamura, N. Usami and S. Fukatsu

    APPLIED SURFACE SCIENCE   Vol. 102   page: 263-271   1996

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  461. Rectangular AlGaAs/AlAs quantum wires using spontaneous vertical quantum wells

    W. G. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and Y. Shiraki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 35 ( 2B ) page: 1214-1216   1996

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  462. Polarization properties of GaAsP/AlGaAs tensilely strained quantum wire structures grown on V-grooved GaAs substrates

    W. Pan, H. Yaguchi, K. Onabe, R. Ito, N. Usami and Y. Shiraki

    INSTITUTE OF PHYSICS CONFERENCE SERIES   Vol. 145   page: 925-930   1996

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  463. Improved luminescence quality with an asymmetric confinement potential in Si-based type-II quantum wells grown on a graded SiGe relaxed buffer

    S. Fukatsu, N. Usami and Y. Shiraki

    J. Vac. Sci. Technol   Vol. 14   page: 2387-2390   1996

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  464. CHARACTERIZATION OF SIGE QUANTUM-WIRE STRUCTURES BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY

    V. Higgs, E. C. Lightowlers, N. Usami, T. Mine, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 67 ( 12 ) page: 1709-1711   1995.9

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  465. DYNAMICS OF EXCITON DIFFUSION IN SIGE QUANTUM-WELLS ON A V-GROOVE PATTERNED SI SUBSTRATE

    N. Usami, H. Akiyama, Y. Shiraki and S. Fukatsu

    Physical Review B   Vol. 52 ( 7 ) page: 5132-5135   1995.8

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  466. ENHANCEMENT OF RADIATIVE RECOMBINATION IN SI-BASED QUANTUM-WELLS WITH NEIGHBORING CONFINEMENT STRUCTURE

    N. Usami, F. Issiki, D. K. Nayak, Y. Shiraki and S. Fukatsu

    Applied Physics Letters   Vol. 67   page: 524-526   1995.7

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  467. ISLAND FORMATION DURING GROWTH OF GE ON SI(100) - A STUDY USING PHOTOLUMINESCENCE SPECTROSCOPY

    H. Sunamura, N. Usami, Y. Shiraki and S. Fukatsu

    Applied Physics Letters   Vol. 66 ( 22 ) page: 3024-3026   1995.5

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  468. Intense photoluminescence from Si-based quantum well structures with neighboring confinement structure

    N. Usami, Y. Shiraki and S. Fukatsu

    JOURNAL OF CRYSTAL GROWTH   Vol. 157   page: 27-30   1995

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  469. STRAIN-INDUCED LATERAL BAND-GAP MODULATION IN SI1-XGEX/SI QUANTUM-WELL AND QUANTUM-WIRE STRUCTURES

    N. Usami, H. Sunamura, T. Mine, S. Fukatsu and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 150   page: 1065-1069   1995

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  470. Photoluminescence investigation on growth mode changeover of Ge on Si(100)

    H. Sunamura, S. Fukatsu, N. Usami and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 157 ( 1-4 ) page: 265-269   1995

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  471. Anomalous spectral shift of photoluminescence from MBE-grown strained Si1-xGex/Si quantum wells mediated by atomic hydrogen

    G. Ohta, S. Fukatsu, N. Usami, Y. Shiraki and T. Hattori

    JOURNAL OF CRYSTAL GROWTH   Vol. 157 ( 1-4 ) page: 36-39   1995

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  472. CRUCIAL ROLE OF SI BUFFER LAYER QUALITY IN THE PHOTOLUMINESCENCE EFFICIENCY OF STRAINED SI1-XGEX/SI QUANTUM-WELLS

    T. Mine, N. Usami, Y. Shiraki and S. Fukatsu

    J. Cryst. Growth   Vol. 150 ( 1-4 ) page: 1033-1037   1995

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  473. CATHODOLUMINESCENCE INVESTIGATION OF SIGE QUANTUM WIRES FABRICATED ON V-GROOVE PATTERNED SI SUBSTRATES

    V. Higgs, E. C. Lightowlers, N. Usami, Y. Shiraki, T. Mine and S. Fukatsu

    J. Cryst. Growth   Vol. 150   page: 1070-1073   1995

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  474. Field-driven blue shift of excitonic photoluminescence in Si-Ge quantum wells and superlattices

    J. Y. Kim, S. Fukatsu, N. Usami and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 157 ( 1-4 ) page: 40-44   1995

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  475. ABRUPT SI GE INTERFACE FORMATION USING ATOMIC-HYDROGEN IN SI MOLECULAR-BEAM EPITAXY

    G. Ohta, S. Fukatsu, Y. Ebuchi, T. Hattori, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 65 ( 23 ) page: 2975-2977   1994.12

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  476. PHOTOLUMINESCENCE OF SI/SIGE/SI QUANTUM-WELLS ON SEPARATION BY OXYGEN IMPLANTATION SUBSTRATE

    D. K. Nayak, N. Usami, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 64 ( 18 ) page: 2373-2375   1994.5

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  477. OPTICAL ANISOTROPY IN WIRE-GEOMETRY SIGE LAYERS GROWN BY GAS-SOURCE SELECTIVE EPITAXIAL-GROWTH TECHNIQUE

    N. Usami, T. Mine, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 64 ( 9 ) page: 1126-1128   1994.2

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  478. FABRICATION OF SIGE/SI QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

    N. Usami, T. Mine, S. Fukatsu and Y. Shiraki

    SOLID-STATE ELECTRONICS   Vol. 37   page: 539-541   1994

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  479. PHOTOLUMINESCENCE OF SI1-XGEX/SI QUANTUM-WELLS WITH ABRUPT INTERFACES FORMED BY SEGREGANT-ASSISTED GROWTH

    N. Usami, S. Fukatsu and Y. Shiraki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 33 ( 4B ) page: 2304-2306   1994

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  480. OPTICAL-DETECTION OF INTERDIFFUSION IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES

    H. Sunamura, S. Fukatsu, N. Usami and Y. Shiraki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 33 ( 4B ) page: 2344-2347   1994

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  481. BAND-EDGE PHOTOLUMINESCENCE OF SIGE/STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)

    D. K. Nayak, N. Usami, H. Sunamura, S. Fukatsu and Y. Shiraki

    SOLID-STATE ELECTRONICS   Vol. 37 ( 4-6 ) page: 933-936   1994

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  482. A SI1-XGEX/SI SINGLE-QUANTUM-WELL P-I-N STRUCTURE GROWN BY SOLID-SOURCE AND GAS-SOURCE HYBRID SI MOLECULAR-BEAM EPITAXY

    Y. Kato, S. Fukatsu, N. Usami and Y. Shiraki

    JOURNAL OF CRYSTAL GROWTH   Vol. 136   page: 355-360   1994

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  483. GAS-SOURCE MOLECULAR-BEAM EPITAXY AND LUMINESCENCE CHARACTERIZATION OF STRAINED SI1-XGEX/SI QUANTUM-WELLS

    S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori and K. Okumura

    J. Cryst. Growth   Vol. 136   page: 315-321   1994

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  484. BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)

    D. K. Nayak, N. Usami, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 25 ) page: 3509-3511   1993.12

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  485. REALIZATION OF CRESCENT-SHAPED SIGE QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

    N. Usami, T. Mine, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 20 ) page: 2789-2791   1993.11

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  486. BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI SIGE TYPE-II QUANTUM-WELLS ON SI(100)

    D. K. Nayak, N. Usami, H. Sunamura, S. Fukatsu and Y. Shiraki

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 32 ( 10A ) page: L1391-L1393   1993.10

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  487. SELF-MODULATING SB INCORPORATION IN SI/SIGE SUPERLATTICES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

    K. Fujita, S. Fukatsu, N. Usami, Y. Shiraki, H. Yaguchi, R. Ito and K. Nakagawa

    Surface Science   Vol. 295 ( 3 ) page: 335-339   1993.10

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  488. LUMINESCENCE STUDY ON INTERDIFFUSION IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

    H. Sunamura, S. Fukatsu, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 12 ) page: 1651-1653   1993.9

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  489. HYBRID SI MOLECULAR-BEAM EPITAXIAL REGROWTH FOR A STRAINED SI1-XGEX/SI SINGLE-QUANTUM-WELL ELECTROLUMINESCENT DEVICE

    Y. Kato, S. Fukatsu, N. Usami and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 17 ) page: 2414-2416   1993.8

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  490. HIGH-TEMPERATURE OPERATION OF STRAINED SI0.65GE0.35/SI(111) P-TYPE MULTIPLE-QUANTUM-WELL LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami, Y. Shiraki, A. Nishida and K. Nakagawa

    Applied Physics Letters   Vol. 63 ( 7 ) page: 967-969   1993.8

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  491. ABRUPT COMPOSITIONAL TRANSITION IN LUMINESCENT SI1-XGEX/SI QUANTUM-WELL STRUCTURES FABRICATED BY SEGREGANT ASSISTED GROWTH USING SB ADLAYER

    N. Usami, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 63 ( 3 ) page: 388-390   1993.7

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  492. DISLOCATION GLIDE MOTION IN HETEROEPITAXIAL THIN-FILMS OF SI1-XGEX/SI(100)

    Y. Yamashita, K. Maeda, K. Fujita, N. Usami, K. Suzuki, S. Fukatsu, Y. Mera and Y. Shiraki

    Philosophical Magazine Letters   Vol. 67 ( 3 ) page: 165-171   1993.3

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  493. IS LOW-TEMPERATURE GROWTH THE SOLUTION TO ABRUPT SI/SI1-XGEX INTERFACE FORMATION

    S. Fukatsu, N. Usami, K. Fujita, H. Yaguchi, Y. Shiraki and R. Ito

    J. Cryst. Growth   Vol. 127   page: 401-405   1993

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  494. INTENSE PHOTOLUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES

    S. Fukatsu, N. Usami, H. Yoshida, A. Fujiwara, Y. Takahashi, Y. Shiraki and R. Ito

    J. Cryst. Growth   Vol. 127   page: 489-493   1993

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  495. OBSERVATION OF ELECTROLUMINESCENCE ABOVE ROOM-TEMPERATURE IN STRAINED P-TYPE SI0.65GE0.35/SI(111) MULTIPLE-QUANTUM WELLS

    S. Fukatsu, N. Usami, Y. Shiraki, A. Nishida and K. Nakagawa

    J. Cryst. Growth   Vol. 127   page: 1083-1087   1993

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  496. LUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami and Y. Shiraki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 32 ( 3B ) page: 1502-1507   1993

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  497. LUMINESCENCE FROM SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami and Y. Shiraki

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 11 ( 3 ) page: 895-898   1993

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  498. PHOTOGENERATION AND TRANSPORT OF CARRIERS IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES

    S. Fukatsu, N. Usami and Y. Shiraki

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 31 ( 11A ) page: L1525-L1528   1992.11

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  499. QUANTUM SIZE EFFECT OF EXCITONIC BAND-EDGE LUMINESCENCE IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELL STRUCTURES GROWN BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, H. Yoshida, N. Usami, A. Fujiwara, Y. Takahashi, Y. Shiraki and R. Ito

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 31 ( 9B ) page: L1319-L1321   1992.9

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  500. OBSERVATION OF DEEP-LEVEL-FREE BAND EDGE LUMINESCENCE AND QUANTUM CONFINEMENT IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELL STRUCTURES GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY

    N. Usami, S. Fukatsu and Y. Shiraki

    Applied Physics Letters   Vol. 61 ( 14 ) page: 1706-1708   1992.8

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  501. ELECTROLUMINESCENCE FROM STRAINED SIGE/SI QUANTUM-WELL STRUCTURES GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida and K. Nakagawa

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 31 ( 8A ) page: L1015-L1017   1992.8

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  502. BAND-EDGE LUMINESCENCE OF STRAINED SIXGE1-X/SI SINGLE QUANTUM-WELL STRUCTURES GROWN ON SI(111) BY SI MOLECULAR-BEAM EPITAXY

    S. Fukatsu, N. Usami and Y. Shiraki

    Japanese Journal of Applied Physics Part 2-Letters   Vol. 31 ( 8A ) page: L1018-L1020   1992.8

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  503. SYSTEMATIC BLUE SHIFT OF EXCITON LUMINESCENCE IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES GROWN BY GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY

    S. Fukatsu, H. Yoshida, N. Usami, A. Fujiwara, Y. Takahashi, Y. Shiraki and R. Ito

    THIN SOLID FILMS   Vol. 222   1992

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    DOI: 10.1016/0040-6090(92)90025-7

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Books 14

  1. 太陽電池とLEDの原理

    Adrian Kitai著 宇佐美 徳隆 監訳( Role: Joint author)

    丸善  2013.7 

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    Language:Japanese

  2. 太陽電池技術ハンドブック 4.2.3 シリコン多結晶の欠陥・組織と評価

    宇佐美 徳隆( Role: Joint author)

    オーム社  2013.5 

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    Language:Japanese

  3. "第2章第3節 SiGe量子ドット系", "量子ドット太陽電池の最前線"

    豊田太郎(監修)( Role: Joint author)

    シーエムシー出版  2012 

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    Language:Japanese

  4. "Chapter 4. Types of silicon-germanium (SiGe) bulk crystal growth methods and their applications" in "SiGe nanostructures: materials science, technology and applications"

    edited by Y. Shiraki, and N. Usami( Role: Joint author)

    Woodhead publishing  2011 

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    Language:English

  5. "第3編第2章 太陽電池の基礎知識", "スマートハウスの発電・蓄電・給電技術の最前線"

    田路 和幸 (監修) ( Role: Joint author)

    シーエムシー出版  2011 

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    Language:Japanese

  6. "第1章第4節 SiGe量子ドットのエピタキシャル成長", "量子ドットエレクトロニクスの最前線"

    荒川泰彦 他41名( Role: Joint author)

    NTS社  2011 

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    Language:Japanese

  7. 太陽電池の基礎と応用 シリコン太陽電池

    宇佐美 徳隆( Role: Joint author)

    培風館  2010.7 

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    Language:Japanese

  8. 「太陽電池の物理」

    Peter Würfel 著、宇佐美 徳隆、石原 照也、中嶋 一雄監訳( Role: Joint author)

    丸善  2010 

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    Language:Japanese

  9. "Chapter 6. Fundamental understanding of subgrain boundaries" in "Advances in Materials Research 14, Crystal Growth of Si for Solar Cells"

    Edited by K. Nakajima, and N. Usami( Role: Joint author)

    Springer  2009 

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    Language:English

  10. "Chapter 10. High-quality Si multicrystals with same grain orientation and large grain size by the new dendritic casting method for high-efficiency soalr cell applications" in "Advances in Materials Research 10, Frontiers in Materials Research"

    Edited by Y. Fujikawa, K. Nakajima, and T. Sakurai( Role: Joint author)

    Springer  2008 

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    Language:English

  11. "Chaper 12. Floating cast method as a new growth method of silicon bulk multicrystals for solar cells" in "Advances in Materials Research 10, Frontiers in Materials Research"

    Edited by Y. Fujikawa, K. Nakajima, and T. Sakurai( Role: Joint author)

    Springer  2008 

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    Language:English

  12. "Chapter 11. Growth of high-quality polycrystalline Si ingot with same grain orientation using dendritic casting method" in "Advances in Materials Research 10, Frontiers in Materials Research"

    Edited by Y. Fujikawa, K. Nakajima, and T. Sakurai( Role: Joint author)

    Springer  2008 

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    Language:English

  13. "III/34C3. Single and coupled quantum wells:SiGe" in "Landolt-Börnstein New Series"

    Edited by E. Kasper and C. Klingshirn( Role: Joint author)

    Springer  2007 

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    Language:English

  14. "Chapter 6.6. SiGe quantum structures" in "Mesoscopic Physics and Electronics"

    Edited by T. Ando, Y. Arakawa, K. Furuya, S. Komiyama, and S. Nakashima( Role: Joint author)

    Springer-Verlag  1998 

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    Language:English

▼display all

MISC 1

  1. 太陽光発電へのインフォマティクス応用 Invited International coauthorship

    宇佐美 徳隆

    太陽光発電協会会誌     2021.4

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (other)  

Presentations 616

  1. Materials and process informatics for research on photovoltaics Invited International conference

    Noritaka USAMI

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11.9 

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    Event date: 2020.11.8 - 2020.11.13

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Korea, Republic of  

  2. Bayesian Optimization of Passivating Contacts for Crystalline Silicon Solar Cells Invited International conference

    Noritaka Usami

    240th ECS Meeting  2021.10.10 

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    Event date: 2021.10.10 - 2021.10.14

    Language:English   Presentation type:Oral presentation (invited, special)  

  3. Multicrystalline Informatics for High-Performance Crystals Invited International conference

    Noritaka Usami, Takuto Kojima, Kentaro Kutsukake, Xin Liu, Hiroaki Kudo, Tetsuya Matsumoto, Tatsuya Yokoi, Yasuo Shimizu and Yutaka Ohno

    2021 International Conference on Solid State Devices and Materials  2021.9.6 

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    Event date: 2021.9.6 - 2021.9.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  4. Application of Machine Learning for High-Performance Multicrystalline Materials Invited International conference

    Noritaka USAMI

    239th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS)  2021.5 

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    Event date: 2021.5.30 - 2021.6.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  5. Multicrystalline informatics for development of high-performance materials Invited International conference

    Noritaka Usami

    NU Tech Roundtable 2021  2021.5.13 

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    Event date: 2021.5.13

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:on-line  

  6. 多結晶材料情報学の基盤技術 Invited

    宇佐美徳隆

    第36回シリサイド系半導体研究会  2021.3.19  応用物理学会シリサイド系半導体研究会

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    Event date: 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  7. 多結晶シリコンウェハの蛍光イメージ中の転位クラスター領域の画像変換による特定

    工藤博章, 松本哲也, 沓掛健太朗, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.18  応用物理学会

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  8. As-doped n-BaSi2膜の水素パッシベーションによる分光感度向上と第一原理計算によるミクロ構造考察 International coauthorship

    青貫翔, 山下雄大, Xu Zhihao, 後藤和泰, 都甲薫, 宇佐美徳隆, Migas Dmitri, 末益崇

    第68回応用物理学会春季学術講演会  2021.3.16  応用物理学会

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  9. シリコンナノ結晶/酸化シリコン複合膜に対する水素化処理の検討

    松見優志, 後藤和泰, ビルデマーカス, 黒川康良, 福谷克之, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.18  応用物理学会

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  10. 多結晶シリコンの光反射特性による結晶方位推定モデル

    小島拓人, 原京花, 沓掛健太朗, 松本哲也, 工藤博章, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.18  応用物理学会

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  11. ベイズ最適化を援用した高性能パッシベーティングコンタクトの実現 ~TiOx/結晶Siヘテロ構造への適用~

    宮川晋輔, 後藤和泰, 沓掛健太朗, 黒川康良, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.18  応用物理学会

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  12. 三次元キャリアシミュレーションを用いた多結晶Si中三重点の電気的特性の評価

    三田村和樹, 沓掛健太朗, 小島拓人, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.18  応用物理学会

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  13. シリコンナノ結晶/酸化シリコンを複合化した導電性パッシベーション膜の太陽電池応用

    津幡亮平, 後藤和泰, 黒川康良, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.18  応用物理学会

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

  14. 同位体制御 28Si/SiGe量子計算基板における微小結晶傾斜角イメージング International coauthorship

    竹内公一, 宮本聡, 伊藤公平, 宇佐美徳隆

    第68回応用物理学会春季学術講演会  2021.3.17  応用物理学会

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  15. 高性能多結晶材料創製に向けた多結晶材料情報学の開拓

    宇佐美徳隆

    日本物理学会第76回年次大会  2021.3.13  日本物理学会

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    Event date: 2021.3.12 - 2021.3.15

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  16. Prediction of Stress and Dislocations in Silicon Ingots using Artificial Neural Networks International conference

    A. Boucetta,Y. Fukuda, K. Kutsukake, T. Kojima, H. Kudo,T. Matsumoto, and N. Usami

    The 8th Asian Conference on Crystal Growth and Crystal Technology, CGCT-8, Virtual meeting  2021.3.1 

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    Event date: 2021.3.1 - 2021.3.4

    Language:English   Presentation type:Oral presentation (general)  

  17. Formation of SiGe alloyed films on Si substrate by screen-printing of Al-Ge pre-alloyed mixture pastes International conference

    M. Nakahara, M. Matsubara, S. Suzuki, M. Dhamrin, K. Fukuda, S. Miyamoto, K. Maeda, K. Fujiwara, and N. Usami

    The 8th Asian Conference on Crystal Growth and Crystal Technology, CGCT-8, Virtual meeting  2021.3.1 

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    Event date: 2021.3.1 - 2021.3.4

    Language:English   Presentation type:Oral presentation (general)  

  18. Signature of crystallographic tilting in isotopically enriched Si-28/SiGe International conference

    S. Miyamoto, K. Takeuchi, Kohei M. Itoh, and N. Usami

    The 8th Asian Conference on Crystal Growth and Crystal Technology, CGCT-8, Virtual meeting  2021.3.1 

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    Event date: 2021.3.1 - 2021.3.4

    Language:English   Presentation type:Oral presentation (general)  

  19. 蛍光イメージングと有限差分シミュレーションを用いた多結晶シリコン中傾斜粒界の電気的特性の定量評価

    三田村和樹, 沓掛健太朗, 小島拓人, 宇佐美徳隆

    第3回結晶工学×ISYSE合同研究会  2020.12.23  応用物理学会結晶工学分科会

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    Event date: 2020.12.23

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  20. ベイズ最適化を用いたTiOx/SiOy結晶Siへテロ構造における水素プラズマ処理条件の最適化

    宮川晋輔, 後藤和泰, 沓掛健太朗, 黒川康良, 宇佐美徳隆

    第3回結晶工学×ISYSE合同研究会  2020.12.23  応用物理学会結晶工学分科会

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    Event date: 2020.12.23

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン  

  21. 成長速度の二段階制御による真空蒸着BaSi2薄膜の高品質化

    吉野孝政, 後藤和泰, 黒川康良, 宇佐美徳隆

    第3回結晶工学×ISYSE合同研究会  2020.12.23  応用物理学会結晶工学分科会

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    Event date: 2020.12.23

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  22. 蛍光イメージングと有限差分シミュレーションを用いた多結晶シリコン中傾斜粒界の電気的特性の定量評価

    三田村和樹, 宇佐美徳隆

    第30回学生による材料フォーラム  2020.11.13  日本金属学会・日本鉄鋼協会東海支部

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    Event date: 2020.11.13

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  23. シリコン結晶における粒界の成長方向に対する粒界構造と固液界面形状の影響

    福田祐介, 宇佐美徳隆

    第30回学生による材料フォーラム  2020.11.13  日本金属学会・日本鉄鋼協会東海支部

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    Event date: 2020.11.13

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  24. 多層光学イメージを利用した多結晶Si中の結晶粒形状の取得

    山腰健太, 宇佐美徳隆

    第30回学生による材料フォーラム  2020.11.13  日本金属学会・日本鉄鋼協会東海支部

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    Event date: 2020.11.13

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  25. 結晶成長の機械学習のためのデータ取得:何をどこで計測するか Invited

    沓掛健太朗, B. Abderahmane, 宇佐美徳隆, 前田健作

    第49回結晶成長国内会議  2020.11.9  日本結晶成長学会

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  26. シリコン結晶における粒界の成長方向に対する粒界構造と固液界面形状の影響

    福田祐介, 沓掛健太郎, 小島拓人, 宇佐美徳隆

    第49回結晶成長国内会議  2020.11.9  日本結晶成長学会

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

  27. バルク多結晶成長のプロセスサイエンス Invited

    宇佐美徳隆, 沓掛健太朗, 小島拓人, 工藤博章, 横井達矢, 大野裕

    第49回結晶成長国内会議  2020.11.9  日本結晶成長学会

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  28. Triple Junctions of Random Angle Grain Boundaries Acting as Dislocation Sources in HP Mc-Silicon Ingots International conference

    Y. Ohno, K. Tajima, K. Kutsukake, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11.8 - 2020.11.13

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  29. Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide-coated crystalline silicon heterocontacts International conference

    Y. Nakagawa, K. Gotoh, M. Wilde, S. Ogura, Y. Kurokawa, K. Fukutani, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11.8 - 2020.11.13

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  30. Improvement of BaSi2 thin film quality by two-step growth rate control of vacuum evaporation International conference

    T. Yoshino, K. Gotoh, Y. Kurokawa, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11.8 - 2020.11.13

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  31. Impact of excess PbI2 on controlling one-dimensional MAPbI3 perovskites for high carrier lifetimes International conference

    V. H. Nguyen, Y. Kurokawa, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11.8 - 2020.11.13

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  32. Impact of Ge deposition temperature on fabrication of surface texture using SiGe islands as a mask International coauthorship International conference

    V. H. Nguyen, A. Novikov, M. Shaleev, D. Yurasov, Y. Kurokawa, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11.8 - 2020.11.13

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  33. Impact of Misalignment of S3{111} Grain Boundaries on Photovoltaic Properties in Silicon International conference

    Y. Ohno, T. Tamaoka, H. Yoshida, Y. Shimizu, N. Ebisawa, Y. Nagai, K. Kutsukake, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11.8 - 2020.11.13

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  34. Application of artificial neural network to predict distribution of dislocations in silicon ingots International conference

    A. Boucetta,Y. Fukuda, K. Kutsukake, T. Kojima, H. Kudo,T. Matsumoto, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11.8 - 2020.11.13

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  35. Fabrication of Si textures with low etching margin using Ag-assisted alkaline solution International conference

    Y. Li, V.H. Nguyen, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11.8 - 2020.11.13

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  36. Dependence of electrical properties of stacked Sn-doped In2O3 films on oxygen partial pressure International conference

    T. Inoue, K. Gotoh, Y. Kurokawa, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11.8 - 2020.11.13

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  37. Carbon dioxide/Silane gas flow rate dependency on electrical properties in silicon-nanocrystals-embedded silicon oxide passivating contacts International conference

    R. Tsubata, K. Gotoh, Y. Kurokawa, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11.8 - 2020.11.13

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Korea, Republic of  

  38. Impact of hydrogen plasma treatment on the passivation performance of TiOx prepared on crystalline silicon by atomic layer deposition International conference

    S. Miyagawa, K. Gotoh, S. Ogura, M. Wilde, Y. Kurokawa, K. Fukutani, and N. Usami

    The 30th International Photovoltaic Science and Engineering Conference (PVSEC-30) & Global Photovoltaic Conference 2020 (GPVC 2020)  2020.11 

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    Event date: 2020.11.8 - 2020.11.13

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  39. 日本太陽光発電学会の設立に寄せて Invited

    宇佐美徳隆

    第17回「次世代の太陽光発電システム」シンポジウム  2020.10.15 

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    Event date: 2020.10.15 - 2020.10.16

    Language:Japanese   Presentation type:Oral presentation (keynote)  

  40. 積層Sn添加In2O3薄膜における電気的特性の酸素分圧依存性

    井上徹哉, 後藤和泰, 黒川康良, 宇佐美徳隆

    第17回「次世代の太陽光発電システム」シンポジウム  2020.10.15 

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    Event date: 2020.10.15 - 2020.10.16

    Language:Japanese   Presentation type:Poster presentation  

  41. シリコンナノ結晶/酸化シリコン復合膜における炭酸ガス/シランガス流量比依存性

    津幡亮平, 後藤和泰, 黒川康良, 宇佐美徳隆

    第17回「次世代の太陽光発電システム」シンポジウム  2020.10.15 

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    Event date: 2020.10.15 - 2020.10.16

    Language:Japanese   Presentation type:Poster presentation  

  42. ベイズ最適化を用いたTiOx/SiOy結晶Siへテロ構造における水素プラズマ処理条件の最適化

    宮川晋輔, 後藤和泰, 黒川康良, 宇佐美徳隆

    第17回「次世代の太陽光発電システム」シンポジウム  2020.10.15 

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    Event date: 2020.10.15 - 2020.10.16

    Language:Japanese   Presentation type:Poster presentation  

  43. Mg層を挿入したTiOx/SiOy/Si構造の接合特性のTiOx膜厚依存性

    中川裕太, 後藤和泰, 黒川康良, 宇佐美徳隆

    第17回「次世代の太陽光発電システム」シンポジウム  2020.10.15 

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    Event date: 2020.10.15 - 2020.10.16

    Language:Japanese   Presentation type:Poster presentation  

  44. 成長速度の二段階制御による真空蒸着BaSi2薄膜の高品質化

    吉野孝政, 後藤和泰, 黒川康良, 宇佐美徳隆

    第17回「次世代の太陽光発電システム」シンポジウム  2020.10.15 

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    Event date: 2020.10.15 - 2020.10.16

    Language:Japanese   Presentation type:Poster presentation  

  45. Atom probe tomography observation of diffusion behaviors in isotopically controlled silicon nanostructures International conference

    S. Miyamoto, R. Kiga, Y. Shimizu, Y. Nagai, N. Usami, and K. M. Itoh

    IMRT Joint International Symposium on Radiation Effects in Materials and Actinide Science (GIMRT-REMAS2020), Virtual meeting  2020.9 

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    Event date: 2020.9.30 - 2020.10.3

    Language:English   Presentation type:Oral presentation (general)  

  46. Fabrication of TiOx thin film on Si using solution-based process and its passivation performance International conference

    H. Luo, V. H. Nguyen, K. Gotoh, Y. Kurokawa, and N. Usami

    2020 International Conference on Solid State Devices and Materials (SSDM 2020), Virtual Conference  2020.9 

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    Event date: 2020.9.27 - 2020.9.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  47. Passivation Mechanism of the High-performance Titanium Oxide Passivating Contacts on Crystalline Silicon Studied by Spectroscopic Ellipsometry International conference

    K. Gotoh, H. Miura, A. Shimizu, T. Kurokawa, and N. Usami

    2020 International Conference on Solid State Devices and Materials (SSDM 2020), Virtual Conference  2020.9 

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    Event date: 2020.9.27 - 2020.9.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  48. Direct imaging of crystallographic tilting for valley-controlled Si/SiGe qubits International conference

    K. Takeuchi, S. Miyamoto, K. M. Itoh, and N. Usami

    2020 International Conference on Solid State Devices and Materials (SSDM 2020), Virtual Conference  2020.9 

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    Event date: 2020.9.27 - 2020.9.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  49. Size effect of silicon nanocrystals on Seebeck coefficient of phosphorus-doped Si nanocrystals/silicon oxide multilayers International conference

    H. Kobayashi, S. Kato, M. Kurosawa, K. Gotoh, N. Usami, and Y. Kurokawa

    2020 International Conference on Solid State Devices and Materials (SSDM 2020), Virtual Conference  2020.9 

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    Event date: 2020.9.27 - 2020.9.30

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  50. ベイズ最適化を用いた酸化チタンパッシベーション膜における水素プラズマ処理条件の最適化

    宮川晋輔, 後藤和泰, 沓掛健太朗, 黒川康良, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  51. 多層光学イメージを利用した多結晶Si中の結晶粒の3次元モデル化

    山腰健太, 沓掛健太朗, 小島拓人, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  52. 多結晶材料情報学による粒界構造の解明と制御に向けて Invited

    宇佐美徳隆, 沓掛健太朗, 小島拓人, 工藤博章, 横井達矢, 大野裕

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  53. 多結晶シリコン組織の結晶方位の統計解析

    小島拓人, 松本哲也, 工藤博章, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  54. Mg層挿入によるTiOx/Siヘテロ接合の接合特性の向上

    中川裕太, 後藤和泰, 黒川康良, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  55. 有限差分シミュレーションを用いた粒界傾斜のキャリア分布への影響評価

    三田村和樹, 沓掛健太朗, 小島拓人, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  56. 印刷と焼成で形成したSiGe混晶薄膜の顕微ラマン分析

    福田啓介, 宮本聡, 中原正博, 沓掛健太郎, ダムリンマルワン, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  57. シリコンナノ結晶/酸化シリコンを複合化した導電性パッシベーション膜の検討

    津幡亮, 後藤和泰, 黒川康良, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  58. Solid-state heteroepitaxy of Si(111) by Aluminum- induced Crystallization

    M. Hainey, T. Yamamoto, E. Zhou, L. Viguerie, and N. Usami

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    Event date: 2020.9.8 - 2020.9.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  59. ハイパフォーマンス多結晶シリコンにおける粒界3重点と転位発生の相関

    大野裕, 田島和哉, 沓掛健太朗, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  60. 溶液プロセスによる酸化チタン薄膜の作製とパッシベーション性能の評価

    羅昊, Van Hoang Nguyen, 後藤和泰, 黒川康良, 宇佐美徳隆

    第81回応用物理学会秋季学術講演会 オンライン開催 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  61. Formation of p-Type BaSi2 Thin Film and its Application to Silicon-Based Heterojunction Solar Cells International conference

    Y. Kimura, M. Fujiwara, K. Takahashi, Y. Nakagawa, T. Yoshino, K. Gotoh, Y. Kurokawa, and N. Usami

    37th European PV Solar Eneregy Conference and Exhibition 

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    Event date: 2020.9.7 - 2020.9.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Portugal  

  62. What Is the Dislocation Sources in the Growth of High-Performance Multicrystalline Si Ingots? International conference

    Y. Ohno, K. Tajima, N. Usami, and K. Kutsukake

    37th European PV Solar Energy Conference and Exhibition, Virtual meeting  2020.9 

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    Event date: 2020.9.7 - 2020.9.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Portugal  

  63. Effect of Hydrogen Plasma Treatment on Silicon Quantum Dot Multilayers Using Amorphous SiOx International conference

    R. Akaishi, K. Gotoh, N. Usami, and Y. Kurokawa

    37th European PV Solar Energy Conference and Exhibition, Virtual meeting  2020.9 

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    Event date: 2020.9.7 - 2020.9.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Portugal  

  64. Fabrication of silicon-nanocrystals-embedded silicon oxide passivating contacts International conference

    R. Tsubata, K. Gotoh, Y. Kurokawa, and N. Usami

    47th IEEE Photovoltaic Specialists Conference (PVSC 47) 

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    Event date: 2020.6.15 - 2020.8.21

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  65. Work function of indium oxide thin films on p-type hydrogenated amorphous silicon International conference

    M. Semma, K. Gotoh, Y. Kurokawa, and N. Usami

    47th IEEE Photovoltaic Specialists Conference (PVSC 47) 

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    Event date: 2020.6.15 - 2020.8.21

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  66. Passivation Mechanism of the High Performance Titanium Oxide Passivating Contacts on Crystalline Silicon Studied by Spectroscopic Ellipsometry International conference

    K. Gotoh, H. Miura, A. Shimizu, S. Miyagawa, Y. Nakagawa, Y. Kurokawa, and N. Usami

    10th International Conference on Crystalline Silicon Photovoltaics 2020 

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    Event date: 2020.6.1 - 2020.6.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hangzhou, China   Country:China  

  67. High-performance TiOx/crystalline Si heterocontacts for solar cells Invited International conference

    Noritaka Usami

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    Event date: 2020.3.19 - 2020.3.20

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Gwangju, Korea   Country:Korea, Republic of  

  68. 畳み込みニューラルネットワークの転移学習に基づいた多結晶シリコ ンインゴット中の転位クラスター発⽣点の特徴

    工藤博章, 松本哲也, 沓掛健太朗, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3.12 - 2020.3.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  69. 多結晶シリコンインゴット中の転位発⽣点近傍の構造特性

    小野裕, 田島和哉, 沓掛健太朗, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3.12 - 2020.3.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  70. MoOx CSC/Si太陽電池のPDAによる特性変動 (3)-表面反転層をチャネルとするFET-TEGのS/Dコンダクタンスによる評価

    林豊, 神岡武文, 後藤和泰, 尾崎亮, 中村京太郎, 森村元勇, 宇佐美徳隆, 大下祥雄, 小椋厚志

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3.12 - 2020.3.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  71. 不活性ガス雰囲気下での熱処理を⽤いたクラックフリーMg2Si厚膜 の合成

    堀場一成, 後藤和泰, 黒川康良, 伊藤孝至, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3.12 - 2020.3.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  72. 機械学習を用いた発光強度プロファイルからの欠陥の電気的特性の推定とイメージマッピング

    三田村和樹, 沓掛健太朗, 小島拓人, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3.12 - 2020.3.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  73. ポストアニール処理を用いたアンドープp-BaSi2/n-Siヘテロ接合太陽電池の作製

    木村裕希, 吉野孝政, 後藤和泰, 黒川康良, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3.12 - 2020.3.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  74. Marked photoresponsivity enhancement and minority carrier lifetime increase of boron-doped BaSi2 by atomic H passivation

    Z. Xu, K. Gotoh, K. Toko, N. Usami, and T. Suemasu

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    Event date: 2020.3.12 - 2020.3.15

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  75. 酸化チタン/結晶シリコンヘテロ構造における水素プラズマ処理の効果

    宮川晋輔, 後藤和泰, M. Wilde, 小倉正平, 黒川康良, 福谷克之, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3.12 - 2020.3.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  76. 印刷と焼成によるシリコン系混晶半導体のエピタキシャル成長とその場観察

    福田啓介, 中原正博, 深見昌吾, 宮本聡, Dhamrin Marwan, 前田健作, 藤原航三, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3.12 - 2020.3.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  77. 機械学習を応用した画像処理による 多結晶シリコンウエハの結晶粒界検出

    山腰健太, 田島和哉, 沓掛健太朗, 小島拓人, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3.12 - 2020.3.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  78. 核反応解析法と原⼦間⼒顕微鏡を⽤いたTiOx/SiOx/Siヘテロ 構造におけるパッシベーション性能の支配要因

    中川裕太, 後藤和泰, ビルデ マーカス, 小倉正平, 黒川 康良, 福谷克之, 宇佐美徳隆

    第67回 応用物理学会春季学術講演会 

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    Event date: 2020.3.12 - 2020.3.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  79. Fabrication of Si Textures with Low Etching Margin Using AgNO3-assisted Alkaline Solution

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    Event date: 2020.3.12 - 2020.3.15

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  80. 多結晶材料情報学の現在地 Invited

    宇佐美徳隆

    アモルファス・ナノ材料と応用 第147委員会、第147回研究会 「マテリアルズインフォマティクスの活用とその課題」 

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    Event date: 2020.1.20

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  81. Activation energy of hydrogen effusion of high performance TiOx/SiOx/c-Si heterocontacts International conference

    Kazuhiro Gotoh, Takeya Mochizuki, Tomohiko Hojo, Yasuyoshi Kurokawa, Eiji Akiyama, Noritaka Usami

    MRS-J The 30th Anniversary Material Research Meeting 2019 

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    Event date: 2019.12.10 - 2019.12.14

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  82. Activation energy of hydrogen effusion of high performance TiOx/SiOx/c-Si heterocontacts International conference

    Kazuhiro Gotoh, Takeya Mochizuki, Tomohiko Hojo, Yasuyoshi Kurokawa, Eiji Akiyama, Noritaka Usami

    MRS-J The 30th Anniversary Material Research Meeting 2019 

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    Event date: 2019.12.10 - 2019.12.14

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  83. Neural Network to Determine Appropriate Thermocouple Positions in Crystal Growth Furnace International conference

    Abderahmane Boucetta, Kentaro Kutsukake, Hiroaki Kudo, Tetsuya Matsumoto, Takuto Kojima, Noritaka Usami

    2019 MRS Fall Meeting & Exhibit 

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    Event date: 2019.12.1 - 2019.12.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  84. Role of the Interlayer in Improving Passivating Contact with Atomic Layer Deposited TiOx on Crystalline Si International conference

    Takeya Mochizuki, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Takahisa Yamamoto, Tomohiko Hojo, Eiji Akiyama, Noritaka Usami

    2019 MRS Fall Meeting & Exhibit 

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    Event date: 2019.12.1 - 2019.12.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  85. Impact of Growth Temperature of Ge Islands on Anti-Reflection Texture Formation International conference

    Van Hoang Nguyen, Yuki Kimura, Alexey Novikov, Mikhail V Shaleev, Satoru Miyamoto, Yasuyoshi Kurokawa, Noritaka Usami

    8th International Symposium on Control of Semiconductor Interfaces 

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    Event date: 2019.11.27 - 2019.11.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  86. Practical Growth Processes of Silicide and Germanite Thin Films for Photovoltaic and Electronic Applications International conference

    Kosuke O. Hara (invited), Shuhei Takizawa, Noritaka Usami, Junji Yamanaka, Keisuke Arimoto

    8th International Symposium on Control of Semiconductor Interfaces 

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    Event date: 2019.11.27 - 2019.11.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  87. 酸化チタン/結晶シリコンヘテロ構造における水素プラズマ処理の影響

    宮川晋輔, 後藤和泰, Markus Wilde,小倉正平, 黒川康良, 福谷克之, 宇佐美徳隆

    第2回ハイドロジェノミクス研究会 

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    Event date: 2019.11.25 - 2019.11.26

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  88. 分光エリプソメトリーを用いた酸化チタン パッシベーション膜のポストアニール効果に関する研究

    後藤和泰、 三浦裕之、 清水彩子、 宮川晋輔、 中川裕太、 黒川康良、 宇佐美徳隆

    第4回フロンティア太陽電池セミナー 

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    Event date: 2019.11.25

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  89. ポストアニール条件がアンドープBaSi2薄膜のキャリア密度に与える影響

    藤原道信, 中川慶彦, 後藤和泰, 黒川康良, 宇佐美徳隆

    第2回結晶工学×ISYSE合同研究会 

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    Event date: 2019.11.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  90. 不活性ガス雰囲気下での熱処理を用いたMg2Si薄膜の作製とその膜質評価

    堀場一成、 藤原道信、 中川慶彦、 後藤和泰、 黒川康良、 伊藤孝至、 宇佐美徳隆

    第2回結晶工学×ISYSE合同研究会 

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    Event date: 2019.11.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  91. データ科学を活用した多結晶シリコンの研究の進展 Invited

    宇佐美 徳隆

    日本学術振興会 結晶成長の科学と技術第161委員会第112回研究会 

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    Event date: 2019.11.18

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  92. Quantitative evaluation of electrical characteristics of inclined grain boundaries in multicrystalline silicon by photoluminescence imaging and finite element simulation International conference

    Kazuki Mitamura, Kentaro Kutsukake, Takuto Kojima, Noritaka Usami

    PVSEC-29, 29th International Photovoltaic Science and Engineering Conference 

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    Event date: 2019.11.4 - 2019.11.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  93. Characterization of Silicon Quantum Dot Solar Cell with the Phosphorus Blocking Layer International conference

    Ryushiro Akaishi, Kazuhiro Gotoh, Shinya Kato, Noritaka Usami, Yasuyoshi Kurokawa

    PVSEC-29, 29th International Photovoltaic Science and Engineering Conference 

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    Event date: 2019.11.4 - 2019.11.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  94. Impact of indium tin oxide double layers deposition on the passivation performance of a-Si:H/c-Si heterocontact International conference

    Masanori Semma, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    PVSEC-29, 29th International Photovoltaic Science and Engineering Conference 

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    Event date: 2019.11.4 - 2019.11.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  95. New Analysis Method to Evaluate Amorphous/Crystalline Si Interface for High Efficiency Heterojunction Solar Cells International conference

    Takefumi Kamioka, Yutaka Hayashi, Kazuhiro Gotoh, Ryo Ozaki, Motoo Morimura, Ayako Shimizu, Kyotaro Nakamura, Noritaka Usami, Yoshio Ohshita, Atsushi Ogura

    PVSEC-29, 29th International Photovoltaic Science and Engineering Conference 

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    Event date: 2019.11.4 - 2019.11.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  96. Close-spaced evaporation:Scalable technique for BaSi2 film deposition International conference

    Kosuke O. Hara, Shuhei Takizawa, Noritaka Usami, Junji Yamanaka, Keisuke Arimoto

    PVSEC-29, 29th International Photovoltaic Science and Engineering Conference 

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    Event date: 2019.11.4 - 2019.11.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  97. An universal approach to produce the passivation materials of c-Si substrate by alcoholic solute PEDOT:PSS International conference

    V.H. Nguyen, Y. Kurokawa, N. Usami

    National University of Singapore and Nagoya University Joint Seminar 

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    Event date: 2019.11.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  98. Fabrication of Tapered Si Nanowires for PEDOT: PSS Hybrid c-Si Solar Cells International conference

    Yuqing Li, Van Hoang Nguyen and Noritaka Usami

    National University of Singapore and Nagoya University Joint Seminar 

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    Event date: 2019.11.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  99. 光学イメージによる多結晶Siウエハの結晶方位解析に向けた研究

    上別府颯一郎、松本哲也、加藤光、沓掛健太朗、工藤博章、宇佐美徳隆

    応用物理学会秋季学術講演会 

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    Event date: 2019.9.18 - 2019.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  100. 発光イメージング法と有限要素シミュレーションを用いた多結晶シリコン中傾斜粒界の電気的特性の定量評価

    三田村和樹、沓掛健太朗、小島拓人、宇佐美徳隆

    応用物理学会秋季学術講演会 

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    Event date: 2019.9.18 - 2019.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  101. 多結晶材料情報学による高性能シリコンイン ゴットの創製に向けて(注目講演) Invited

    宇佐美徳隆、沓掛健太朗、Boucetta Abderahmane、小島拓人、松本哲也、工藤博章、野田祐輔、横井達矢、清水康雄、大野裕

    応用物理学会秋季学術講演会 

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    Event date: 2019.9.18 - 2019.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  102. aSi:H/cSiヘテロ接合Si太陽電池の表面欠陥・トラップ準 位評価手段 -表面反転層ラテラル少数キャリア等価移動度

    神岡武文、林豊、後藤和泰、尾崎亮、森村元勇、内藤志麻子、宇佐美徳隆、大下祥雄、小椋厚志

    応用物理学会秋季学術講演会 

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    Event date: 2019.9.18 - 2019.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  103. サブピクセルシフトによるPLイメージングの空間分解能 の向上

    竹内公一、 沓掛健太朗、 小島拓人、 工藤博章、 松本哲也、 宇佐美徳隆

    応用物理学会秋季学術講演会 

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    Event date: 2019.9.18 - 2019.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  104. 機械学習による発光強度プロファイルからの欠陥の電気特性の推定

    沓掛健太朗、三田村和樹、小島拓人、宇佐美徳隆

    応用物理学会秋季学術講演会 

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    Event date: 2019.9.18 - 2019.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  105. 四元数計算を用いた多結晶シリコンにおけるランダム粒界と Σ3n粒界の識別手法

    小島拓人、 田島和哉、 松本哲也、 工藤博章、 宇佐美徳隆

    応用物理学会秋季学術講演会 

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    Event date: 2019.9.18 - 2019.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  106. 機械学習を用いた多結晶シリコン基板の結晶粒検出と結晶方位推定

    加藤光、上別府颯一郎、小島拓人、沓掛健太朗、松本哲也、工藤博章、竹内義則、宇佐美徳隆

    応用物理学会秋季学術講演会 

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    Event date: 2019.9.18 - 2019.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  107. Evidence of Solute PEDOT:PSS as an Efficient Passivation Material International conference

    V.H. Nguyen, K. Gotoh, Y. Kurokawa, N. Usami, S. Kato

    EU PVSEC 2019, The 36th European Photovoltaic Solar Energy Conference and Exhibition 

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    Event date: 2019.9.9 - 2019.9.13

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  108. Generation and Propagation of Dislocation Clusters Originated from Multicrystallization by S.3n Rotation and in Quasi-Monocrystalline Silicon International conference

    T. Kojima, K. Tajima, T. Matsumoto, H. Kudo, N. Usami, P. Krenckel, S. Riepe

    EU PVSEC 2019, The 36th European Photovoltaic Solar Energy Conference and Exhibition 

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    Event date: 2019.9.9 - 2019.9.13

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  109. Enhanced Material Quality in SMART mono-Si Block Cast Ingots by Introduction of Functional Defects International conference

    S. Riepe, P. Krenckel, A. Hess, T. Trötschler, Y. Hayama, K. Kutsukake, F. Schindler, N. Usami

    EU PVSEC 2019, The 36th European Photovoltaic Solar Energy Conference and Exhibition 

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    Event date: 2019.9.9 - 2019.9.13

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  110. On the Progress in Data Science Approaches for High-Quality Multicrystalline Silicon Ingot for Solar Cells International conference

    Noritaka Usami, Kazuya Tajima, Soichiro Kamibeppu, Abderahmane Boucetta, Kentaro Kutsukake, Takuto Kojima, Tetsuya Matsumoto, Hiroaki Kudo, Yusuke Noda, Tatsuya Yokoi, Yasuo Shimizu, Yutaka Ohno

    EU PVSEC 2019, The 36th European Photovoltaic Solar Energy Conference and Exhibition 

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    Event date: 2019.9.9 - 2019.9.13

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

  111. Preparation and thermoelectric characterization of phosphorous-doped silicon nanocrystals/silicon oxide multilayers International conference

    Hisayoshi Kobayashi, Ryushiro Akaishi, Shinya Kato, Masashi Kurosawa, Noritaka Usami, Yasuyoshi Kurokawa

    SSDM 2019, International Conference on Solid State Devices and Materials 

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    Event date: 2019.9.2 - 2019.9.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  112. Fabrication of Group Ⅳ Semiconductor Alloys on Si substrate by Screen-Printing International conference

    M. Nakahara, M. Matsubara, S. Suzuki, M. Dhamrin, S. Miyamoto, M.F. Hainey Jr., N. Usami

    SSDM 2019, International Conference on Solid State Devices and Materials 

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    Event date: 2019.9.2 - 2019.9.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  113. Fabrication of Group Ⅳ Semiconductor Alloys on Si substrate by Screen-Printing International conference

    M. Nakahara, M. Matsubara,S. Suzuki, M. Dhamrin, S. Miyamoto, M.F. Hainey Jr., N. Usami

    SSDM 2019, International Conference on Solid State Devices and Materials 

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    Event date: 2019.9.2 - 2019.9.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  114. Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell International conference

    Y. Hayashi, T. Kamioka, K. Gotoh, R. Ozaki, K. Nakamura, M. Morimura, S. Naitou, N. Usami, A. Ogura, Y. Ohshita

    SSDM 2019, International Conference on Solid State Devices and Materials 

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    Event date: 2019.9.2 - 2019.9.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  115. Solute PEDOT:PSS as an Excellent Passivation Material of Si Substrate International conference

    V.H. Nguyen, S. Kato, K. Gotoh, Y. Kurokawa, N. Usami

    SSDM 2019, International Conference on Solid State Devices and Materials 

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    Event date: 2019.9.2 - 2019.9.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  116. Highly oriented Si(111) films on lattice-mismatched single-crystalline substrates via aluminum-induced crystallization International conference

    M.F. Hainey Jr., C. Zhou, N. Usami

    SSDM 2019, International Conference on Solid State Devices and Materials 

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    Event date: 2019.9.2 - 2019.9.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  117. Optical Investigation of Interstitial H2 Nuclear-Spin States in Isotopically Enriched Silicon

    新学術「ハイドロジェノミクス」第4回若手育成スクール 

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    Event date: 2019.8.23 - 2019.8.24

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  118. TiOx/SiOx/結晶Siヘテロ界面における水素の脱離エネルギー

    後藤 和泰、望月 健矢、北條 智彦、黒川 康良、秋山 英二、宇佐美 徳隆

    新学術「ハイドロジェノミクス」第4回若手育成スクール 

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    Event date: 2019.8.23 - 2019.8.24

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  119. 水素プラズマ処理によるシリコン量子ドット積層構造の欠陥密度低減と構造特性評価

    赤石 龍士郎、後藤 和泰、黒川 康良, 宇佐美 徳隆

    新学術「ハイドロジェノミクス」第4回若手育成スクール 

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    Event date: 2019.8.23 - 2019.8.24

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  120. 原子層堆積法による結晶Si/SiOx/TiOx構造の作製と熱処理の効果

    中川 裕太、後藤 和泰、宮本 聡、黒川 康良、宇佐美 徳隆

    新学術「ハイドロジェノミクス」第4回若手育成スクール 

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    Event date: 2019.8.23 - 2019.8.24

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  121. 酸化チタン/結晶シリコンヘテロ構造における水素プラズマ処理の検討

    宮川 晋輔、後藤 和泰、黒川 康良、宇佐美 徳隆

    新学術「ハイドロジェノミクス」第4回若手育成スクール 

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    Event date: 2019.8.23 - 2019.8.24

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  122. 太陽電池高性能化への材料科学的アプローチ:結晶シリコン太陽電池を中心に Invited

    宇佐美 徳隆

    物質科学研究会 第1回iMATERIA研究会 

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    Event date: 2019.8.20

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  123. 発光イメージング法と有限要素シミュレーションを用いた多結晶シリコン中傾斜粒界の電気的特性の定量評価

    三田村 和樹、小島 拓人、宇佐美 徳隆

    応用物理学会 若手チャプター 太陽光エネルギー変換機能材料・デバイス開発研究会 

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    Event date: 2019.8.5 - 2019.8.6

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  124. キャリア輸送径路にナノドットを用いたパッシベーション膜の作製と評価

    津幡 亮平、後藤 和泰、黒川 康良、宇佐美 徳隆

    応用物理学会 若手チャプター 太陽光エネルギー変換機能材料・デバイス開発研究会 

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    Event date: 2019.8.5 - 2019.8.6

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  125. TiOx/結晶Siの電気的特性における光照射効果

    宮川 晋輔、後藤 和泰、黒川 康良、宇佐美 徳隆

    応用物理学会 若手チャプター 太陽光エネルギー変換機能材料・デバイス開発研究会 

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    Event date: 2019.8.5 - 2019.8.6

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  126. Influence of Post Annealing Conditions on Carrier Density of Undoped Evaporated BaSi2 Films International conference

    Yuki Kimura, Michinobu Fujiwara, Yoshihiko Nakagawa, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    APAC Silicide 2019, The Fifth Asia-Pacific Conference on Semiconducting Silicides and Related Materials 

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    Event date: 2019.7.20 - 2019.7.23

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  127. Influence of Ba to Si rate ratio on the properties of B-doped BaSi2 epitaxial films International conference

    S. Sugiyama, Y. Kimura, Y. Yamashita, K. Toko, N. Usami, and T. Suemasu

    APAC Silicide 2019, The Fifth Asia-Pacific Conference on Semiconducting Silicides and Related Materials 

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    Event date: 2019.7.20 - 2019.7.23

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  128. Significant improvement on photoresponsivity and minority carrier lifetime of atomic H passivated BaSi2 epitaxial films International conference

    Z. Xu, K. Gotoh, T. Deng, K. Toko, N. Usami, D. Migas, T. Suemasu

    APAC Silicide 2019, The Fifth Asia-Pacific Conference on Semiconducting Silicides and Related Materials 

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    Event date: 2019.7.20 - 2019.7.23

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  129. Synthesis of Mg2Si thin film by thermal treatment under inert gas atmosphere and evaluation of film quality International conference

    Issei Horiba, Michinobu Fujiwara, Yoshihiko Nakagawa, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Takashi Itoh, Noritaka Usami

    APAC Silicide 2019, The Fifth Asia-Pacific Conference on Semiconducting Silicides and Related Materials 

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    Event date: 2019.7.20 - 2019.7.23

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  130. Influence of the time-dependent vapor composition on structural properties of the BaSi2 thin films fabricated by vacuum evaporation International conference

    Takamasa Yoshino, Yuki Kimura, Michinobu Fujiwara, Yoshihiko Nakagawa, Yasuyoshi Kurokawa, Noritaka Usami

    APAC Silicide 2019, The Fifth Asia-Pacific Conference on Semiconducting Silicides and Related Materials 

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    Event date: 2019.7.20 - 2019.7.23

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  131. a-Si:H/c-Siヘテロ構造のパッシベーション性能と水素分布における製膜温度の影響

    後藤 和泰,ビルデ マーカス, 加藤 慎也, 小倉 正平, 黒川 康良, 福谷 克之, 宇佐美 徳隆

    学振175委員会 第16回 「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2019.7.4 - 2019.7.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  132. 書誌情報データベースを利用した175委員会の研究力分析

    宇佐美 徳隆

    学振175委員会 第16回 「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2019.7.4 - 2019.7.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  133. ITO積層化のa-Si:H/c-Si界面パッシベーション性能に及ぼす影響

    扇間 政典, 後藤 和泰, 黒川 康良, 宇佐美 徳隆

    学振175委員会 第16回 「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2019.7.4 - 2019.7.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  134. ハイパフォーマンス多結晶シリコンにおける転位クラスター発生機構

    田島和哉, 沓掛健太朗, 大野裕, 松本哲也, 工藤博章, 宇佐美徳隆

    学振175委員会 第16回 「次世代の太陽光発電システム」シンポジウム 

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    Event date: 2019.7.4 - 2019.7.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  135. Electrical properties of TiOx bilayer prepared by atomic layer deposition at different temperatures International conference

    Takeya Mochizuki, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    The 64th IEEE Photovoltaics Specialist Conference 

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    Event date: 2019.6.16 - 2019.6.21

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  136. Significant improvement of optical properties of BaSi2 due to atomic H passivation by radio-frequency plasma International conference

    Zhihao Xu, Kazuhiro Gotoh, Tianguo Deng, Kaoru Toko, Noritaka Usami, Takashi Suemasu

    The 64th IEEE Photovoltaics Specialist Conference 

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    Event date: 2019.6.16 - 2019.6.21

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  137. Fabrication of Si1-xSnx layer on Si substrate by Screen-Printing of Al-Sn paste International conference

    Masahiro Nakahara, Moeko Matsubara, Kosuke Tsuji, Shota Suzuki, Marwan Dhamrin, Noritaka Usami

    2nd Joint ISTDM / ICSI 2019 Conference 

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    Event date: 2019.6.2 - 2019.6.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  138. Silicon Seed Layers Fabricated by Aluminum-induced Crystallization: Guidelines for Heteroepitaxy International conference

    Mel Hainey, Jr, Yoann Robin, Geoffrey Avit, Loic Viguerie, Hiroshi Amano, Noritaka Usami

    2nd Joint ISTDM / ICSI 2019 Conference 

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    Event date: 2019.6.2 - 2019.6.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  139. Pathways to high-performance silicon-based solar cells: Overview of photovoltaic research at Nagoya University International conference

    Noritaka Usami

    Instituts-Kolloquium, Institut fuer Solarenergieforschung in Hameln (ISFH) 

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    Event date: 2019.4.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  140. Impact of pre-oxidation on hydrogen depth profiles around a-Si:H/c-Si heterointerface International conference

    Kazuhiro Gotoh, Shohei Ogura, Yasuyoshi Kurokawa, Markus Wilde, Katsuyuki Fukutani, Noritaka Usami

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    Event date: 2019.4.8 - 2019.4.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Belgium  

  141. Surface passivation of low temperature processed titanium oxide/alluminium oxide for silicon substrate International conference

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    Event date: 2019.3.13 - 2019.3.15

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  142. Pathways to high-performance silicon-based heterojunction solar cells Invited International conference

    Noritaka Usami

    XXIII International symposium "Nanophysics & Nanoelectronic 

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    Event date: 2019.3.11 - 2019.3.14

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Russian Federation  

  143. Using Ge (Si) islands to increase the efficiency of thin crystalline solar cells Invited International conference

    Mv Shaleev, A.V. Novikov, D.V. Yurasov, N.A. Baidakova, E.E. Morozova, Y. Ota, V.H. Nguyen, K. Gotoh, Y. Kurokawa, N. Usami

    XXIII International symposium "Nanophysics & Nanoelectronic 

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    Event date: 2019.3.11 - 2019.3.14

    Language:English   Presentation type:Oral presentation (general)  

    Country:Russian Federation  

  144. Impact of textured structure on performance of PEDOT:PSS hybrid Si solar cells Invited International conference

    V.H. Nguyen , Y. Ota, A. Novikov, M. Shaleev, K. Gotoh, Y. Kurokawa, N. Usami

    XXIII International symposium "Nanophysics & Nanoelectronic 

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    Event date: 2019.3.11 - 2019.3.14

    Language:English   Presentation type:Oral presentation (general)  

    Country:Russian Federation  

  145. ALD 法で作製したTiOx 電子選択層の積層化による電気的特性の制御

    望月 健矢, 後藤 和泰, 黒川 康良, 宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  146. Aluminum-induced crystallization of Si (111) on highly mismatched crystalline substrates

    Mel Hainey, Eddie (Chenhui) Zhou, Noritaka Usami

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    Event date: 2019.3.9 - 2019.3.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  147. Combination of Simulations and Data Science to Determine Appropriate Thermocouple Positions in a Crystal Growth Furnace

    Abderahmane BOUCETTA, Kentaro KUTSUKAKE, Hiroaki KUDO, Tetsuya MATSUMOTO, Noritaka USAMI

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    Event date: 2019.3.9 - 2019.3.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  148. 放射光X線回折パターンの特徴抽出と空間マッピング

    沓掛 健太朗, 神岡 武文, 井上 憲⼀, 深見 昌吾, 宇佐美 徳 隆, 中原 正博, ダムリン マルワン, 佐々木 拓生, 藤川 誠司, 高橋 正光

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3.9 - 2019.3.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  149. SiOxを障壁層としたSi量子ドット太陽電池の作製

    赤石 龍士郎, 北沢 宏平, 加藤 慎也, 後藤 和泰, 宇佐美 徳 隆, 黒川 康良

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  150. 擬単結晶シリコンにおけるΣ3結晶粒の発達と転位クラスターの生成の関係

    小島 拓人, 田島 和哉, 松本 哲也, 工藤 博章, 宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  151. 3 次元PLイメージング法で同定したハイパフォーマンス多結晶シリコンイ ンゴット中の転位発⽣点近傍の透過電⼦顕微鏡解析

    大野 裕, 田島 和哉, 沓掛 健太朗, 清水 康雄, 海老澤 直樹, 永井 康介, 宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  152. ハイパフォーマンス多結晶Siインゴットにおける析出物分布の3次元可視化

    上別府 颯⼀郎, Krenckel Patricia, Troetschler Theresa, Hess Adam, Riepe Stephan, 宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  153. Ba/Si堆積レート比がB-doped BaSi2膜の少数キャリア寿命に与える影響

    杉山 周, 木村 裕希, 山下 雄大, 都甲 薫, 宇佐美 徳隆, 末益 崇

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  154. 薄型基板上へのGeドットマスクを用いた光閉じ込め構造の作製と太陽電池への応用

    太田 湧士,後藤 和泰,黒川 康良,宇佐美 徳隆, Dmitrij Yurasov, Alexey Novikov, Mikhail Shaleev

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  155. 多結晶シリコンインゴット内における転位クラスターのサイズと伝搬方向の関係

    田島和哉, 松本哲也, 沓掛健太朗, 工藤博章, 宇佐美徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  156. ポストアニール条件がBaSi2薄膜のキャリア密度に与える影響

    木村 裕希, 藤原 道信, 中川 慶彦, 後藤 和泰, 黒川 康良, 宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  157. 印刷と焼成によるSi基板上へのSiGe層のエピタキシャル成長におけるSi基板方位の影響 International conference

    中原 正博、深見 昌吾、Mel F. Hainey, Jr.、中川 慶彦、有元 圭介、後藤 和泰、 黒川 康良、前田 健作、藤原 航三、ダムリン マルワン、宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  158. ALD法で作製した法で作製したTiOx/SiOx/結晶Siヘテロ界面のパッシベーョン効果発現メカニズム〜水素原子脱離の影響〜

    望月 健矢, 後藤 和泰, 北條 智彦, 黒川 康良, 秋山 英二, 宇佐美 徳隆

    第66回応用物理学会春季学術講演会 

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    Event date: 2019.3.9 - 2019.3.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学大岡山キャンパス   Country:Japan  

  159. Multicrystalline informatics for silicon ingot with ideal microstructures Invited International conference

    Noritaka Usami

    European Materials Modeling Council International Workshop 2019 

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    Event date: 2019.2.25 - 2019.2.27

    Language:English   Presentation type:Oral presentation (general)  

    Country:Austria  

  160. Silicon Quantum Dot Superlattice Structure for Next Generation Solar Cell Application International conference

    Ryushiro Akaishi, Kohei Kitazawa, Kazuhiro Gotoh, Shinya Kato, Noritaka Usami, Yasuyoshi Kurokawa

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2.18 - 2019.2.19

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  161. Explorative Studies of Novel Structures as Carrier Selective Contacts International conference

    Ryohei Tsubata, Yuta Nakagawa, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2.18 - 2019.2.19

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  162. Passivation Performance of Crystalline Silicon Solar Cells Employing Stacks of Ultrathin Oxide and Polycrystalline Si Formed by Aluminum Induced Crystallization International conference

    Yuqing Li, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2.18 - 2019.2.19

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  163. BaSi2: Novel Si-Based Material for High Efficiency Thin Film Solar Cells International conference

    Yuki Kimura, Takamasa Yoshino, Michinobu Fujiwara, Yoshihiko Nakagawa, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2.18 - 2019.2.19

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  164. Effective Near-Infrared Light-Trapping Silicon Nanowire Structure for Crystalline Silicon Thin Film Solar Cells International conference

    Yasuyoshi Kurokawa, Shinya Kato, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2.18 - 2019.2.19

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  165. Formation of Light-trapping Structure using Ge Islands Grown by Gas-source Molecular Beam Epitaxy as Etching Masks on a Si Thin Substrate International conference

    Yushi Ota, Dmitry Yurasov, Alexey Novikov, Mikhail Shaleev, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2.18 - 2019.2.19

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  166. Thin PEDOT:PSS: An Excellent Passivation Material International conference

    Van Hoang Nguyen, Shinya Kato, Kazuhiro Gotoh, Yasuyoshi Kurokawa, and Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2.18 - 2019.2.19

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  167. Aluminum Induced Crystallization for Heterointegration of Electronic Materials International conference

    Mel Hainey, Jr., Yoann Robin, Eddie Zhou, Hiroshi Amano, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2.18 - 2019.2.19

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  168. Influence of Light Soaking on c-Si Surface Passivation by Atomic Layer Deposited Titanium Oxide International conference

    Shinsuke Miyagawa, Takeya Mochizuki, Kazuhiro Gotoh, Yasuyoshi Kurokawa, and Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2.18 - 2019.2.19

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  169. Establishment of Quantitative Evaluation Method of Electrical Characteristics of Defects in Silicon Crystals for Solar Cells by Photoluminescence Imaging Method using Finite Element Method International conference

    Kazuki Mitamura, Kentaro Kutsukake, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2.18 - 2019.2.19

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  170. Preparation of Silicon Nanocrystals Embedded in SiOx for Application to Next Generation Thermoelectric Devices International conference

    Hisayoshi Kobayashi, Ryushiro Akaishi, Yasuyoshi Kurokawa, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2.18 - 2019.2.19

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  171. Application of p-type Transparent Conductive Thin Film Copper Iodine to Silicon Heterojunction Solar Cells International conference

    Min Cui, Kazuhiro Gotoh, Yasuyoshi Kurokawa and Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2.18 - 2019.2.19

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  172. High Spatial Resolution of Multicrystalline Imaging by Subpixel Shift International conference

    Koichi Takeuchi, Kazuya Tajima, Yusuke Hayama, Kentaro Kutsukake, Tetsuya Matsumoto, Hiroaki Kudo, Noritaka Usami

    Japan-Korea PV Joint Student Seminar, Nagoya University 

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    Event date: 2019.2.18 - 2019.2.19

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  173. シリコン酸化膜を用いたシリコン量子ドット積層構造における構造・電気的特性評価

    赤石 龍士郎, 北沢 宏平, 後藤 和泰, 加藤 慎也, 宇佐美 徳隆, 黒川 康良

    第3回フロンティア太陽電池セミナー 

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    Event date: 2018.12.13 - 2018.12.14

    Language:English   Presentation type:Oral presentation (general)  

    Venue:宮崎市   Country:Japan  

  174. 超薄膜TiOx/結晶Si界面における酸素・水素原子の挙動

    望月健矢,後藤和泰,黒川康良,山本剛久,宇佐美徳隆

    第12回 物性科学領域横断研究会 

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    Event date: 2018.11.30 - 2018.12.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  175. Effect of slow-speed evaporation of BaSi2 on the performance of p-type BaSi2/n-type crystalline Si solar cells International conference

    Michinobu Fujiwara, Kazuma Takahashi, Yoshihiko Nakagawa, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11.25 - 2018.11.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  176. Multicrystalline Informatics for Silicon Ingot with Ideal Microstructures Invited International conference

    Noritaka Usami, Kazuya Tajima, Soichiro Kamibeppu, Yusuke Hayama, Kentaro Kutsukake, Tetsuya Matsumoto, Hiroaki Kudo

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11.25 - 2018.11.30

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  177. Effects of Tunnel Layers and Light Illumination on the Performance of Electron-Selective TiO2 Contacts International conference

    Hyunju Lee, Changhyun Lee, Yoonmook Kang, Hae-Seok Lee, Donghwan Kim, Noritaka Usami, Yoshio Ohshita

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11.25 - 2018.11.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  178. Recombination Activity of Inclined Σ3{111} Grain Boundaries in High-Performance Si Ingots International conference

    Yutaka Ohno, Kentaro Kutsukake, Takehiro Tamaoka, Seiji Takeda, Yasuo Shimizu, Naoki Ebisawa, Koji Inoue, Yasuyoshi Nagai, Noritaka Usami

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11.25 - 2018.11.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  179. Effects of Surface Doping of Si Absorbers on the Performance of Carrier-Selective Contacts International conference

    Yoshio Ohshita, Hyunju Lee, Takefumi Kamioka, Noritaka Usami

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11.25 - 2018.11.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  180. Fabrication of SiGe Layer on Si Substrate by Screen-Printing International conference

    Masahiro Nakahara, Moeko Matsubara, Shota Suzuki, Shogo Fukami, Marwan Dhamrin, Noritaka Usami

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11.25 - 2018.11.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  181. Annealing Effects on the Layer Structure in BaSi2 Thin Films Studied by DB-PAS International conference

    Ana Montes,Yilei Tian, Daan Schopmeijer, Stephan Eijt, Hendrik Schut, Takashi Suemasu, Noritaka Usami, Joao Serra, Olindo Isabella, Miro Zeman

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11.25 - 2018.11.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  182. Coalesced, Centimeter-scale GaN Films on Amorphous Substrates via MOCVD Growth on a Silicon Seed Layer Fabricated by Aluminum-induced Crystallization International conference

    Mel Hainey,Yoann Robin,Hiroshi Amano,Noritaka Usami

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11.25 - 2018.11.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  183. Epitaxial growth of SiGe on Si substrate by printing and firing of Al-Ge mixed paste International conference

    Shogo Fukami, Yoshihiko Nakagawa, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Masahiro Nakahara, Marwan Dhamrin, Noritaka Usami

    Materials Research Society Fall Meeting & Exhibit 

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    Event date: 2018.11.25 - 2018.11.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  184. Degradation of passivation performance of crystalline silicon solar cells employing stacksof ultrathin oxide and polycrystalline Si formed by aluminum induced crystallization

    Yuqing Li, Kazuhiro Gotoh, Takeya Mochizuki, Yasuyoshi Kurokawa, Noritaka Usami

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    Event date: 2018.11.25

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  185. ポストアニール温度によるBaSi2薄膜のキャリア密度への影響

    木村 裕希, 藤原 道信, 中川 慶彦, 後藤 和泰, 黒川 康良, 宇佐美 徳隆

    第6回応用物理学会 名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date: 2018.11.25

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  186. 3D visualization and numerical information extraction of crystal defects in multicrystalline silicon ingot by processing PL images International conference

    Kazuya Tajima, Tetsuya Matsumoto, Kentaro Kutsukake, Hiroaki Kudo, Noritaka Usami

    The Forum on the Science and Technology of Silicon Materials 2018 

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    Event date: 2018.11.18 - 2018.11.21

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  187. Local analysis of TiOx/SiOx stack with excellent electrical properties for carrier selective contact International conference

    Takeya Mochizuki,Kazuhiro Gotoh, Yasuyoshi Kurokawa, Takahisa Yamamoto, Noritaka Usami

    The Forum on the Science and Technology of Silicon Materials 2018 

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    Event date: 2018.11.18 - 2018.11.21

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  188. Development of detection method of dislocation clusters from photoluminescence images by data science approach International conference

    Kazuya Tajima, Tetsuya Matsumoto, Kentaro Kutsukake, Hiroaki Kudo, Noritaka Usami

    The 7th Korea-Japan Joint Seminar on PV 

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    Event date: 2018.11.15 - 2018.11.17

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  189. Diffusion suppression of phosphorus into a Si quantum dots absorption layer using Nb-doped TiO2 International conference

    Kouhei Kitazawa, Ryushiro Akaishi, Shinya Kato, Noritaka Usami, Yasuyoshi Kurokawa

    The 7th Korea-Japan Joint Seminar on PV 

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    Event date: 2018.11.15 - 2018.11.17

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  190. Influence of illumination during ITO sputtering on passivation performance at a-Si:H/c-Si interface International conference

    Masanori Semma, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    The 7th Korea-Japan Joint Seminar on PV 

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    Event date: 2018.11.15 - 2018.11.17

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  191. Coalesced, Centimeter-scale GaN Films on Amorphous Substrates via MOCVD Growth on a Silicon Seed Layer Fabricated by Aluminum-induced Crystallization International conference

    Mel Hainey,Yoann Robin,Hiroshi Amano,Noritaka Usami

    International Workshop on Nitride Semiconductors 

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    Event date: 2018.11.11 - 2018.11.16

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  192. Transparent conductive Nb doped titanium oxide thin film deposited under low temperature by RF magnetron sputtering International conference

    Xuemei Cheng, Kazuhiro Gotoh, Hyunju Lee, Noritaka Usami

    14th China SoG Silicon and PV Power Conference 

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    Event date: 2018.11.8 - 2018.11.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  193. Enhancing conductivity of PEDOT:PSS thin film for fabrication of c-Si solar cell International conference

    Hoang Van Nguyen, Shinya Kato, Kazuhiro Gotoh, Yasuyoshi Kurokawa, Noritaka Usami

    Emerging Material Technologies Summit 

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    Event date: 2018.11.4 - 2018.11.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Viet Nam  

  194. データ科学手法による結晶成長炉内の最適温度測定位置の検討

    沓掛健太朗, Boucetta Abderahmane, 工藤博章, 松本哲也, 宇佐美徳隆

    第47回結晶成長国内会議 

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    Event date: 2018.10.31 - 2018.11.2

    Language:Japanese  

    Venue:宮城県,仙台市   Country:Japan  

  195. Multicrystalline silicon informatics: A novel methodology to realize high-quality multicrystalline materials Invited International conference

    Noritaka Usami

    The 6th Japan-China Symposium on Crystal Growth and Crystal Technology 

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    Event date: 2018.10.21 - 2018.10.25

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  196. 多層パーセプトロンによる多結晶シリコンPL 像中の転位領域の推定における次元数に関する検討

    工藤博章,松本哲也,沓掛健太朗,宇佐美徳隆

    電子情報通信学会 イメージ・メディア・クオリティ研究会 

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    Event date: 2018.10.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  197. Stacks of a-SiOx:H/a-Si:H Passivation Layer for Low Parasitic Absorption and High Passivation in Silicon Heterojunction Solar Cells International conference

    K. Gotoh, M, Cui, R. Akaishi, Y. Kurokawa, and N. Usami

    EU PVSEC 2018 

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    Event date: 2018.9.24 - 2018.9.28

    Language:English   Presentation type:Poster presentation  

    Venue:Brussel   Country:Belgium  

  198. Multicrystalline Informatics to Realize Ideal Crystalline Silicon for Solar Cells International conference

    N. Usami, Y. Hayama, T. Muramatsu, K. Tajima, S. Kamibeppu, K. Kutsukake, T. Matsumoto, and H. Kudo

    EU PVSEC 2018 

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    Event date: 2018.9.24 - 2018.9.28

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Brussel   Country:Belgium  

  199. 電子エネルギー損失分光法を用いた高パッシベーション性能TiOx/Sixヘテロ界面の局所構造の解明

    望月健矢,後藤和泰,黒川康良,山本剛久,宇佐美徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9.18 - 2018.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  200. 多結晶シリコンPL像中の転位領域の多層パーセプトロンによる推定

    工藤博章,松本哲也,沓掛健太朗,宇佐美徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9.18 - 2018.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  201. Σ3{111}対称傾角粒界の不純物偏析能とキャリア再結合速度に対する傾角のずれの影響

    大野 裕、沓掛 健太朗、玉岡 武泰、竹田 精治, 清水 康雄, 海老澤 直樹, 井上 耕治, 永井 康介, 宇佐美 徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9.18 - 2018.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  202. The influence of Ge substrate modification on photoresponse properties of evaporated BaSi2 films for thin-film solar cells application

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    Event date: 2018.9.18 - 2018.9.21

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  203. Conductivity enhancement of PEDOT:PSS thin film for ITO-free hybrid c-Si solar cell

    Hoang Van Nguyen, Shinya Kato, Kazuhiro Goto, Yasuyoshi Kurokawa, Noritaka Usami

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    Event date: 2018.9.18 - 2018.9.21

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  204. Pole figures as tools for understanding film misorientation in Group IV thin films fabricated by aluminum-induced crystallization International conference

    Mel Hainey, Yoann Robin, Hiroshi Amano, Noritaka Usami

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    Event date: 2018.9.18 - 2018.9.21

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  205. Effect of Heaters Fluctuations on the Temperature for High Quality Si Ingots International conference

    Abderahmane BOUCETTA, Kentaro Kutsukake, Noritaka Usami

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    Event date: 2018.9.18 - 2018.9.21

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  206. データ科学的手法を用いた 多結晶Siと反射特性の相関の解明

    上別府颯一郎, 松本哲也, 沓掛健太朗, 工藤博章, 宇佐美徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9.18 - 2018.9.21

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  207. 画像処理を用いた多結晶シリコンのマクロPL画像における転位クラスター検出とキャリア再結合の関係

    田島和哉、沓掛健太朗、松本哲也、工藤博章、宇佐美徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9.18 - 2018.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  208. 印刷と焼成によるSi基板上へのSiGe層のエピタキシャル成長における熱処理条件の効果

    深見 昌吾、中川 慶彦、後藤 和泰、黒川 康良、中原 正博、ダムリン マルワン、宇佐美 徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9.18 - 2018.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  209. ITO製膜時の光照射がa-Si:H/c-Si界面におけるパッシベーション性能に及ぼす影響

    扇間政典, 後藤和泰, 黒川康良, 山本剛久, 宇佐美徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9.18 - 2018.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  210. Geドットマスクを用いた光閉じ込め構造の作製とa-Si:Hパッシベーション:Ge成長温度の効果

    太田 湧士,後藤 和泰,黒川 康良,宇佐美 徳隆, Dmitrij Yurasov, Alexey Novikov, Mikhail Shaleev

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9.18 - 2018.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  211. p型BaSi2/n型結晶Siヘテロ接合形成におけるBaSi2低速蒸着の効果

    藤原 道信,高橋 一真,中川 慶彦,後藤 和泰,黒川 康良,伊藤 孝至,宇佐美 徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9.18 - 2018.9.21

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  212. Low temperature processed high conductive Nb doped titanium oxide thin film deposited by RF magnetron sputtering

    Xuemei Cheng, Kazuhiro Gotoh and Noritaka Usami

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    Event date: 2018.9.18 - 2018.9.21

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  213. 不活性ガス雰囲気下での熱処理を用いたMg2Si薄膜の合成と膜質評価

    堀場 一成, 藤原 道信, 中川 慶彦, 後藤 和泰, 黒川 康良, 伊藤 孝至, 宇佐美 徳隆

    第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9.18 - 2018.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  214. 真空蒸着法による透明導電膜上へのBaSi2 薄膜作製と評価

    中川 慶彦, 望月 健矢,後藤 和泰, 黒川 康良, 宇佐美 徳隆

    中川 慶彦, 望月 健矢,後藤 和泰, 黒川 康良, 宇佐美 徳隆 

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    Event date: 2018.9.18 - 2018.9.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋   Country:Japan  

  215. データ科学を活用した高品質多結晶材料創製に向けて Invited

    宇佐美 徳隆,沓掛 健太朗,松本 哲也,工藤 博章,横井 達 矢,清水 康雄,大野 裕

    日本セラミックス協会 第 31 回秋季シンポジウム 

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    Event date: 2018.9.5 - 2018.9.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋工業大学   Country:Japan  

  216. Evaluation of Si Nanowire MOS Capacitor Using High-k Dielectric Materials International conference

    R. Nezasa, Y. Kurokawa, N. Usami

    IEEE NANO 2018 

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    Event date: 2018.7.23 - 2018.7.26

    Language:English   Presentation type:Oral presentation (general)  

    Country:United Kingdom  

  217. FORMATION OF BLACK-Si FOR SOLAR CELLS BY SELECTIVE ETCHING STRUCTURES WITH GeSi ISLANDS

    M.V. Shaleev, A.V. Novikov, N.A. Baydakova, D.V. Yurasov, E.E. Morozova, V.A. Verbus, E.V. Skorokhodov, Y. Ota, A. Hombe, Y. Kurokawa, N. Usami

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    Event date: 2018.7.12 - 2018.7.13

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  218. 薄型 Rib-Si 太陽電池の特性分布測定

    岩田 龍門,石河 泰明,黒川 康良,小長井 誠

    第15回「次世代の太陽光発電システム」シンポジウム  

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    Event date: 2018.7.12 - 2018.7.13

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  219. データ科学的手法を用いた多結晶Siの結晶方位解析に関する研究

    上別府颯一郎、松本哲也、沓掛健太朗、工藤博章、宇佐美徳隆

    第15回「次世代の太陽光発電システム」シンポジウム  

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