Faculty Profiles - TANIGUCHI Hiroki

Papers - TANIGUCHI Hiroki

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Unconventional Polarization Response in Titanite-Type Oxides due to Hashed Antiferroelectric Domains Reviewed

Hiroki Taniguchi, Takumi Watanabe, Taro Kuwano, Akitoshi Nakano, Yukio Sato, Manabu Hagiwara, Hiroko Yokota, Kazuhiko Deguchi

ACS nano Vol. 18 ( 22 ) page： 14523 - 14531 2024.5

Cu Doping Effects on Magnetic Properties of Ba3ZnRu2O9 Reviewed

Kimura A., Yasui Y., Nakano A., Taniguchi H., Terasaki I.

Journal of the Physical Society of Japan Vol. 94 ( 3 ) 2025.3

Designing Dielectric Properties by Local Structure Engineering Invited Reviewed

TANIGUCHI Hiroki

Nihon Kessho Gakkaishi Vol. 67 ( 1 ) page： 30 - 37 2025.2

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Crystallographic Society of Japan

Here we demonstrate antiferroelectricity and antiferroelectric domain engineering to enhance permittivity in titanite-type oxides. Despite the conventional understanding that antiferroelectric domains, unlike ferroelectric ones, do not provide an additional polarization response due to their non-polar nature, it has been discovered that condensed domain walls（anti-phase boundaries）in titanite-type CaTi（Si1–xGex）O5 cooperatively form polar clusters, markedly enhancing the dielectric permittivity of the system. This finding introduces a new concept of domain engineering in dielectric materials to boost permittivity.

DOI： 10.5940/jcrsj.67.30

CiNii Research

Biosensor Application of CMOS Inverter and Ring Oscillator with Organic Field-Effect Transistors Reviewed

Utsumi M., Fujiwara A., Goto H., Okamoto H., Takeyasu N., Saitoh Y., Suga M., Takahashi Y., Imanaka H., Taniguchi H., Yasui S., Eguchi R., Kubozono Y.

ACS Applied Electronic Materials Vol. 7 ( 4 ) page： 1483 - 1492 2025.2

Language：English Publishing type：Research paper (scientific journal) Publisher：ACS Applied Electronic Materials

Organic field-effect transistors (FETs) were fabricated for use in a biosensor that detects urea hydrolysis under urease. Here, a 60 nm thick 2,6-diphenylanthracene (DPA) thin film was used to prepare a p-channel FET that effectively detected this enzymatic reaction. The absolute drain current, |ID|, of the transfer curve rapidly increased at any gate voltage, VG, when a droplet of 0.1 M phosphate buffer solution (pH = 6.7 at 25 °C) containing 25 mM urea and 49 nM urease was placed on a different gate electrode (i.e., sensor electrode) than the VG electrode. Thus, urea hydrolysis directly affected the value of VG, enhancing |ID|. The usage of high-k gate dielectric ZrO2 in the FET device caused the absolute value of VG, |VG|, to decrease by ≈1.0 V in the transfer curve. The value of |ID| at any absolute drain voltage |VD| and |VG| was plotted as a function of time and urea concentration [S], showing a rapid increase and reaching saturation within ≈1.0 min or up to [S] = 250 mM. Furthermore, we prepared the complementary metal oxide semiconductor (CMOS) inverter with thin films of DPA as a p-channel and N,N′-di-n-octyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C8) as an n-channel to detect urea hydrolysis. The logic threshold voltage VTIC in the CMOS inverter increased by placing a droplet containing urea and urease on a different gate electrode than that delivering the input voltage Vin. Finally, a ring oscillator consisting of five CMOS inverters was fabricated to detect the variation in oscillation frequency throughout the reaction, revealing an unambiguous decrease in the frequency. The successful detection of urea hydrolysis is the first step toward the realization of a practical biosensor incorporating a CMOS inverter and ring oscillator.

DOI： 10.1021/acsaelm.4c02031

Scopus

Titanite-type solid solutions (Ca,Pb)TiGeO5: a competition between triclinic and antiferroelectric distortions Reviewed

Zerui Li, Taro Kuwano, Akitoshi Nakano, Manabu Hagiwara, Shintaro Yasui, Hiroki Taniguchi, Hiroko Yokota

Journal of the Ceramic Society of Japan Vol. advpub ( 0 ) 2025

Theoretical and data-driven approaches to semiconductors and dielectrics: from prediction to experiment Reviewed Open Access

Fumiyasu Oba, Takayuki Nagai, Ryoji Katsube, Yasuhide Mochizuki, Masatake Tsuji, Guillaume Deffrennes, Kota Hanzawa, Akitoshi Nakano, Akira Takahashi, Kei Terayama, Ryo Tamura, Hidenori Hiramatsu, Yoshitaro Nose, Hiroki Taniguchi

Science and Technology of Advanced Materials Vol. 25 ( 1 ) page： 2423600 2024.12

High dielectric breakdown strength of antipolar CaTiGeO5 ceramics sintered at optimized temperature Reviewed Open Access

Vol. 50 ( 18 ) page： 34197 - 34204 2024.9

Effect of Al–Nb codoping on dielectric properties and breakdown strength of rutile TiO2 ceramics Reviewed

Mitsuha Kawasaki, Taro Kuwano, Hiroki Taniguchi, Shinobu Fujihara, Manabu Hagiwara

Journal of the Ceramic Society of Japan Vol. 132 ( 7 ) page： 304 - 311 2024.7

Ferroelectric polycrystalline Bi2SiO5 thin films on Pt-covered Si substrates prepared by pulsed laser deposition combined with post-annealing Reviewed

Haruto Takahashi, Shingo Maruyama, Hiroshi Naganuma, Hiroki Taniguchi, Ryota Takahashi, Shintaro Yasui, Kenichi Kaminaga, Yuji Matsumoto

Journal of Alloys and Compounds Vol. 988 ( 15 ) page： 174195 2024.6

Antiferroelectricity of titanite-type oxide SrTiGeO5 and its potential for power electronics applications Reviewed

Toshiya Uohashi, Taro Kuwano, Manabu Hagiwara, Kenji Natori, Kazuhiko Deguchi, Hiroki Taniguchi

Applied Physics Letters Vol. 124 ( 18 ) page： 182901 2024.4

Re-estimation of Maxwell-Wagner relaxation for novel absorbers via (Ta+Ga)-doped rutile-type TiO2 ceramics with various valence proportions and sintering temperatures Reviewed

T. Kuwano, Y. Hashimoto, K. Deguchi, H. Taniguchi

Journal of Alloys and Compounds Vol. 966 2023.12

Dielectric Materials with Hyperordered Structures Reviewed

Hiroki Taniguchi

Hyperordered Structures in Materials: Disorder in Order and Order within Disorder page： 313 - 331 2023.10

Direct microwave energy input on a single cation for outstanding selective catalysis Reviewed

F. Kishimoto, T. Yoshioka, R. Ishibashi, H. Yamada, K. Muraoka, H. Taniguchi, T. Wakihara, K. Takanabe

Science advances Vol. 9 ( 33 ) 2023.8

Structural origins of the unusual thermal stability of amorphous CuxGe50-xTe50 (0 ≤ x ≤ 33.3) Reviewed International coauthorship

J.R. Stellhorn, B. Paulus, B.D. Klee, M. Inui, H. Taniguchi, Y. Sutou, S. Hosokawa, W.C. Pilgrim

Journal of Physics Condensed Matter Vol. 35 ( 30 ) 2023.8

Temperature-Stable Linear Dielectric Response of Low-Temperature Sintered La-Doped Bi2SiO5 Ceramics Reviewed

Y. Yasumoto, T. Kuwano, H. Taniguchi, S. Fujihara, M. Hagiwara

ACS Applied Electronic Materials Vol. 5 ( 8 ) page： 4323 - 4329 2023.7

Ferroelectricity in oxygen-deficient perovskite-type oxide Sr10Ga6Sc4O25 Reviewed

A. Nakano, I. Terasaki, H. Taniguchi

Journal of Materials Chemistry C Vol. 11 ( 25 ) page： 8541 - 8546 2023.6

Ferroelectric Ionic Molecular Crystals with Significant Plasticity and a Low Melting Point: High Performance in Hot-Pressed Polycrystalline Plates and Melt-Grown Crystalline Sheets Reviewed

J. Harada, H. Takahashi, R. Notsuka, M. Takehisa, Y. Takahashi, T. Usui, H. Taniguchi

Angewandte Chemie - International Edition Vol. 62 ( 3 ) page： e202215286 2023.1

エマージェント物性を生みだす超秩序構造の創出ー特に誘電体材料に関してー Reviewed

谷口博基

セラミックス Vol. 58 page： 505 - 508 2023

Controlling dielectric properties of Nb + X (X = Al, Ga, In) co-doped and Nb-doped rutile-type TiO2 single crystals Reviewed

S. Kakimoto, Y. Hashimoto, T. Kuwano, K. Kimura, K. Hayashi, M. Hagiwara, K. Deguchi, H. Taniguchi

Journal of Materials Chemistry C Vol. 11 ( 4 ) page： 1304 - 1310 2022.12

Hyper-Ordered Structures in Dielectric Materials Reviewed International coauthorship

M. Deluca, H. Taniguchi

Journal of the Physical Society of Japan Vol. 91 ( 9 ) page： 091001 2022.9

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Papers - TANIGUCHI Hiroki