受賞国：日本国

受賞国：日本国

受賞国：日本国

受賞国：日本国

受賞国：日本国

受賞国：アメリカ合衆国

受賞国：アメリカ合衆国

受賞国：日本国

受賞国：日本国

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Applied Physics Express  

Bipolar degradation is a critical problem in Silicon carbide devices, caused by the expansion of single Shockley stacking faults (1SSFs) from basal plane dislocations. This paper presents the effects of helium implantation on the suppression of 1SSFs expansion. The fabricated PiN diodes were analyzed using current-voltage characteristics and electroluminescence imaging. The results show that helium implantation can effectively suppress 1SSFs expansion without significantly degrading diode performance. We consider that this suppression is due to the pinning of dislocations by point defects introduced during helium implantation, and the reduction of carrier lifetime may also play a role in suppressing 1SSFs expansion.

DOI： 10.35848/1882-0786/ad6be5

Open Access

Web of Science

Scopus

担当区分：最終著者,　責任著者   記述言語：日本語  

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Applied Crystallography  

Advancements in phonon engineering have propelled the study of heat conduction within nanostructures, focusing on the wave nature of phonons for thermal conductivity manipulation. This work investigates the annealing-induced structural transformation of titanium-chromium oxide crystals, highlighting a role in modulating thermal conductivity through the regularization of crystallographic shear (CS) plane spacing. Utilizing high-angle annular dark-field scanning transmission electron microscopy and selected-area electron diffraction, a transformation from disordered to ordered arrangements of CS planes was observed through annealing at high temperatures. The thermal conductivity increased following annealing. The variability observed in the spacing of CS planes before annealing implies that phonon Anderson localization might play a role in the changes in thermal conductivity.

DOI： 10.1107/S1600576724006381

Web of Science

Scopus

担当区分：筆頭著者,　最終著者,　責任著者   記述言語：日本語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Materials Science in Semiconductor Processing  

This study explored proton implantation into 4H-SiC substrates to suppress the expansion of single Shockley stacking faults (SSSFs), which is a source of bipolar degradation in 4H-SiC devices. While previous research has demonstrated the effectiveness of proton implantation in epitaxial layers, concerns about defect generation have persisted. Therefore, we implanted protons into 4H-SiC substrates, followed by epitaxial growth. Then, we fabricate PiN diodes using the epitaxial layer aiming to reduce SSSF expansion and enhance PiN diode reliability. The results indicate that proton implantation has no significant suppression effects on the SSSF expansion, coupled with the undesired induction of double Shockley stacking faults. Thus, proton implantation into the substrates does not enhance the reliability of 4H-SiC devices, emphasizing the need for further investigations into suppression mechanisms.

DOI： 10.1016/j.mssp.2024.108264

Web of Science

Scopus

担当区分：筆頭著者,　責任著者   記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：日本結晶成長学会  

DOI： 10.19009/jjacg.51-1-04

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Crystal Growth  

In the top-seeded solution growth (TSSG) method for SiC, control of macrostep development is crucial for improving the crystal quality. Dislocation conversion phenomena caused by macrosteps with a certain height on the crystal surface can reduce the dislocation density, while over-developed macrosteps bring macroscopic defects such as solvent inclusions. It is experimentally reported that solution flow direction to the step movement has a substantial impact on the macrostep development: parallel solution flow promotes and anti-parallel solution flow suppresses the increase of macrostep height. Our hypothesis is that this macrostep development is governed by the interaction between the macrosteps not by the instability of the density of the atomical steps. In this study, we constructed a computational fluid dynamic model of the boundary layer around macrosteps on the crystal surface, incorporating the solution flow on the boundary layer and consumption of the carbon solute by the macrostep movement quantitatively. The computational simulation reveals that the macrostep with position shift from the center of the adjacent macrosteps moves to the direction of the nearer macrostep under the parallel flow and moves to the farther macrostep under the antiparallel flow. These macrostep movements result in the bunching and debunching of the macrosteps. The mechanisms of macrostep movements demonstrated in this study will be useful for the precise control of macrostep height aiming to the reduction of the dislocation density during SiC solution growth.

DOI： 10.1016/j.jcrysgro.2024.127609

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Scopus

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

This study applies Bayesian super-resolution to X-ray photoelectron spectroscopy (XPS), achieving up to a 20-fold reduction in measurement time while preserving data quality. Traditional XPS, crucial for surface analysis, typically requires extensive measurement durations. Our methodology significantly accelerates the process, as demonstrated with glass and Polytetrafluoroethylene samples, where we reduced measurement times by up to 1/20th without compromising spectral accuracy. This approach decreases noise levels and retains spectral integrity, offering a highly efficient solution for XPS. This innovation is particularly valuable in material science, enabling rapid, reliable surface analysis.

DOI： 10.35848/1347-4065/ad3140

Open Access

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.35848/1347-4065/ad1779

Web of Science

その他リンク： https://iopscience.iop.org/article/10.35848/1347-4065/ad1779/pdf

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Crystal Growth and Design  

In the solution growth method of silicon carbide, cellular structures and solvent inclusions are fatal defects. This study investigates the mechanism of how cosolvent chromium and additive aluminum influence the formation of cellular structures and inclusions via numerical simulations based on a phase field model. The simulation results indicate that introducing chromium into the solution increases the growth rate of the SiC crystals. The uneven distribution of chromium components near the macrostep edge is prone to trigger constitutional supersaturation, ultimately leading to cellular structures and inclusions. Constitutional supersaturation is more pronounced in solutions with a higher viscosity. Additionally, a small amount of additive aluminum increases the interfacial energy, enhancing the step stability by raising the potential barrier for curved steps and moderating step slopes. Experimental results demonstrate that a solution containing 40% chromium can increase the growth rate by three times compared to a pure Si solution. The Si0.59-Cr0.4-Al0.01 solution emerges as a promising candidate, maintaining a high growth rate while preserving step stability and effectively suppressing the development of cellular structures and inclusions.

DOI： 10.1021/acs.cgd.3c01476

Web of Science

Scopus

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：日本結晶学会  

DOI： 10.5940/jcrsj.65.s19

CiNii Research

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Diamond and Related Materials  

Non-destructive characterization of crystalline defects in SiC wafers is important for manufacturing high-performance SiC power devices with high productivity. The present study shows that the edge component of the Burgers vector can be identified by birefringence imaging under conditions deviating slightly from the crossed-Nicols condition and by calculation of the in-plane shear stress distribution. It is also found that the combination of birefringence observation and X-ray topography allows the discrimination of the family of threading screw dislocations. The present results will further the understanding of the relationship between defect structure and the properties of SiC power devices.

DOI： 10.1016/j.diamond.2023.110192

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Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Advanced Theory and Simulations  

Technology computer-aided design (TCAD) simulation is an important tool for the development of semiconductor devices. Based on coupled partial differential equations (PDEs) for behaviors, TCAD can calculate objects such as impurities, point defects, and electronic carriers in semiconductors. However, over recent years semiconductor devices have become increasingly miniaturized and complicated, resulting in much longer calculation times for TCAD. Machine learning is one technology that may be used to overcome this simulation cost problem. In this study, a neural network architecture is proposed that considers the structure of the coupled PDEs. Features representing each concentration distribution of the calculation objects are extracted by convolution operations and their reaction is modeled by channel attention. The performance of the proposed architecture and of conventional neural network models is evaluated using a simulation dataset generated by 1D coupled PDEs that models the diffusion and reaction of vacancies and interstitial atoms. In addition, the advantage of the method is discussed through the analyses of error correlations of the two predictions and attention coefficients. The machine learning method developed in this study will be applicable to other physics described by coupled PDEs and is expected to speed up the computation of simulations in various fields.

DOI： 10.1002/adts.202300218

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Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Crystal Growth and Design  

For the solution growth of silicon carbide, solvent inclusions are significant technological issues, and methods to suppress the formation of solvent inclusions are investigated in this study. Experimental observations show that solvent inclusions are formed behind the cellular structures. A phase field model is used to reproduce the formation process of cellular structures and solvent inclusions. Simulation results indicate that slight perturbations of the step front can convert into cellular structures in the case of insufficient supply of carbon, and the overdeveloped cellular structures consequently result in solvent inclusions. Accordingly, several schemes can be suggested by the simulation model to suppress the formation of cellular structures by enhancing the carbon supply. By increasing the carbon diffusion coefficient, cellular structures can be suppressed. Moreover, the step height and the solution flow direction also play an important role in suppressing the cellular structures. This study provides a comprehensive understanding of the formation process of cellular structures and solvent inclusions. A growth process with a high diffusion coefficient and opposite solution flow to the step flow direction was proposed to suppress the formation of cellular structures. The proposed numerical model could be applied in other solution crystal growth methods.

DOI： 10.1021/acs.cgd.2c01512

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Scopus

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Electronic Materials  

Characterization of defects in semiconductor wafers is essential for the development and improvement of semiconductor devices, especially power devices. X-ray topography (XRT) using synchrotron radiation is a powerful methods used for defect characterization. To achieve detailed characterization of large-size semiconductor wafers by synchrotron XRT, we have developed nuclear emulsion plates reaching a high-resolution and wide dynamic range. We have shown that higher-resolution XRT images could be obtained using emulsions with smaller iodobromide crystals, and demonstrated clear observation of threading edge dislocations in a SiC epitaxial layer having small contrast. Furthermore, we demonstrated XRT image acquisition for almost all of a 150-mm SiC wafer with one plate. Our development will contribute to advances in electronic materials, especially in the field of power electronics, in which defect characterization is important for improving the performance and yield of devices.

DOI： 10.1007/s11664-023-10270-8

Open Access

Web of Science

Scopus

担当区分：最終著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Alloys and Compounds  

Thermal conduction was investigated in titanium-chromium oxide natural superlattices with an ordered arrangement of crystallographic shear planes, which were nearly pristine interfaces for thermal phonons. Thermal conductivity exhibited a clear maximum value at around 50 K, which indicates interface roughness as small as 20 pm based on the calculation of thermal conductivity by a modified Debye-Callaway model. With an ordered arrangement of nearly pristine interfaces at nanoscale, the wave contribution to phonon transport was estimated to be predominant at lower temperatures (less than 100 K) and as much as 30 % even at room temperature. We found that the interface roughness greatly influences the thermal conduction in natural superlattice systems, which may lead to variations in the reported value of thermal conductivity. We have demonstrated that the wave contribution of thermal conductivity become apparent in bulk crystal having nano scale periodic structure with pristine interfaces.

DOI： 10.1016/j.jallcom.2022.167915

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Scopus

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Applied Physics Express  

Bipolar degradation in SiC bipolar devices, in which stacking faults (SFs) expand to accommodate the movement of partial dislocations during forward bias application, is one of the critical problems impeding the widespread implementation of SiC power devices. Here we clearly demonstrate that the movement of partial dislocations can be suppressed by proton implantation, which has good compatibility with semiconductor processing, through investigation of the contraction behavior of SFs in SiC epitaxial layers subjected to proton implantation.

DOI： 10.35848/1882-0786/acb585

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Crystal Growth and Design  

In the solution growth of the SiC crystal, macrosteps with sufficient height on an off-axis substrate are required to reduce defects and achieve a high-quality grown layer. However, over-developed macrosteps can induce new defects and adversely affect the crystal quality. To better understand and control the behavior of macrosteps corresponding to the control parameters of the growth system, a simulation method that consists of a global two-dimensional computational fluid dynamic (CFD) model, a local three-dimensional CFD model near the growth front, and a kinetics model that describes the movement of macrosteps on the crystal surface is proposed. The simulation method is first applied to investigate the effect of the crystal rotation speed on macrostep morphology. Although the results indicate that a higher crystal rotation speed results in less step bunching, constantly rotating the crystal in one direction is demonstrated to be incapable of yielding a uniform macrostep distribution on the whole surface. Accordingly, a sophisticated control pattern is designed by periodically switching the flow direction underneath the crystal surface, where the proposed simulation method is critical to determine detailed control-parameter values. When the control pattern suggested by the simulation is used, a grown crystal with a uniform macrostep morphology and ideal step height on the whole surface is obtained in the practical experiment.

DOI： 10.1021/acs.cgd.2c01194

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Materials Science in Semiconductor Processing  

We analyzed the carrier lifetime in a drift layer of 1.2 kV-class SiC p-n diodes to suppress bipolar degradation. According to the device simulation results, the required carrier lifetime in the drift layer was estimated to be shorter than 10 ns with a current density of 300 A/cm2 if the threshold hole density for the expansion of the stacking fault at the interface of the drift layer and substrate was 2 × 1016 cm−3. Numerical analysis revealed that to ensure a carrier lifetime shorter than 10 ns, the 1/e2 lifetime obtained by microwave photoconductivity decay (μ-PCD) measurements should be shorter than 7.2 ns. Experimental μ-PCD measurements showed that 1/e2 lifetimes obtained from the as-received epiwafer were much longer than 7.2 ns, and even after H+ implantation, high-temperature annealing, or electron irradiation, 1/e2 lifetimes were still long. Therefore, carrier lifetime control in the drift layer is not sufficient to suppress bipolar degradation, and a combination of carrier lifetime control with other methods is necessary for the fabrication of 1.2 kV-class SiC p-n diodes for the complete suppression of bipolar degradation at a current capacity of 300 A/cm2.

DOI： 10.1016/j.mssp.2022.107126

Web of Science

Scopus

担当区分：最終著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.1080/27660400.2022.2107884

Web of Science

担当区分：筆頭著者,　責任著者   記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：公益財団法人 高輝度光科学研究センター  

ルチル型酸化チタンにおいて酸素欠損が生じると、酸素欠損を含む面欠陥が周期的に配列するシア構造と呼ばれる構造となることが知られている。このような面欠陥の周期配列によって生じる、フォノンの分散関係の変化を調べるために、本研究では比較のために、面欠陥の周期配列を含まないルチル型酸化チタンのフォノン分散を非弾性Ｘ線散乱によって測定した。(121)方向に沿ったフォノン分散測定の結果、40 meV 以下のエネルギー領域において３つのフォノンモードを観測することができた。

DOI： 10.18957/rr.10.6.521

CiNii Research

担当区分：最終著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Scientific Reports  

4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar degradation. This degradation is caused by the expansion of single Shockley stacking-faults (1SSFs) from basal plane dislocations in the 4H-SiC crystal. Here, we present a method for suppressing the 1SSF expansion by proton implantation on a 4H-SiC epitaxial wafer. PiN diodes fabricated on a proton-implanted wafer show current–voltage characteristics similar to those of PiN diodes without proton implantation. In contrast, the expansion of 1SSFs is effectively suppressed in PiN diodes with proton implantation. Therefore, proton implantation into 4H-SiC epitaxial wafers is an effective method for suppressing bipolar degradation in 4H-SiC power-semiconductor devices while maintaining device performance. This result contributes to the development of highly reliable 4H-SiC devices.

DOI： 10.1038/s41598-022-23691-y

Open Access

Web of Science

Scopus

PubMed

担当区分：責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Advanced Theory and Simulations  

The macroscopic distribution of fluid flows, which affect the quality of final products for various kinds of materials, is often difficult to describe in mathematical formulae and hinders the implementation of empirical knowledge in scaling up. In the present study, the characteristics of the flow distribution in silicon carbide (SiC) solution growth are described by using the position of the saddle point and the solution growth conditions are optimized by computational fluid dynamics simulation, machine learning, and a genetic algorithm. As a result, the candidates of the optimal condition for the solution growth of 6-in. SiC crystals are successfully obtained from the empirical knowledge gained from 3-in. crystal growth, by adding the topological description to the objective function. The present design of the objective function using the topological description can possibly be applied to other crystal growth or materials processing problems and to overcome scale-up difficulties, which can facilitate the rapid development of functional materials such as SiC wafers for power device applications.

DOI： 10.1002/adts.202200302

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Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Advanced Theory and Simulations  

Real-time prediction and dynamic control systems that can adapt to an unsteady environment are necessary for material fabrication processes, especially crystal growth. Recent studies have demonstrated the effectiveness of machine learning in predicting an unsteady crystal growth process, but its wider application is hindered by the large amount of training data required for sufficient accuracy. To address this problem, this study investigates the capability of transfer learning to predict geometric evolution in an unsteady silicon carbide (SiC) solution growth system based on a small amount of data. The performance of transferred models is discussed regarding the effect of the transfer learning method, training data amount, and time step length. The transfer learning strategy yields the same accuracy as that of training from scratch but requires only 20% of the training data. The accuracy is stably inherited through successive time steps, which demonstrates the effectiveness of transfer learning in reducing the required amount of training data for predicting evolution in an unsteady crystal growth process. Moreover, the transferred models trained with relatively more data (no more than 100%) further improve the accuracy inherited from the source model through multiple time steps, which broadens the application scope of transfer learning.

DOI： 10.1002/adts.202200204

Web of Science

Scopus

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Scientific Reports  

SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the present study, we investigated the stacking fault expansion behavior under UV illumination in a 4H-SiC epitaxial layer subjected to proton irradiation. X-ray topography observations revealed that proton irradiation suppressed stacking fault expansion. Excess carrier lifetime measurements showed that stacking fault expansion was suppressed in 4H-SiC epitaxial layers with proton irradiation at a fluence of 1 × 1011 cm−2 without evident reduction of the excess carrier lifetime. Furthermore, stacking fault expansion was also suppressed even after high-temperature annealing to recover the excess carrier lifetime. These results implied that passivation of dislocation cores by protons hinders recombination-enhanced dislocation glide motion under UV illumination.

DOI： 10.1038/s41598-022-17060-y

Open Access

Web of Science

Scopus

PubMed

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Applied Crystallography  

For the nondestructive characterization of SiC wafers for power device application, birefringence imaging is one of the promising methods. In the present study, it is demonstrated that birefringence image contrast variation in off-axis SiC wafers corresponds to the in-plane shear stress under conditions slightly deviating from crossed Nicols according to both theoretical consideration and experimental observation. The current results indicate that the characterization of defects in SiC wafers is possible to achieve by birefringence imaging.

DOI： 10.1107/S1600576722006483

Open Access

Web of Science

Scopus

PubMed

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Crystal Growth and Design  

For the emergence of quantum effects such as plasmonic enhancement, we successfully assembled high-crystallinity nano-gapped particle superlattices composed of sub-10 nm nanoparticles into the solid state through the self-assembly of DNA-programmed nanoparticles (DNA-NPs) in solution followed by dynamic isotropic contraction during dehydration. By this method of isotropic contraction, the crystal symmetry of the self-assembled DNA-NP superlattice in solution was inherited into a dehydrated and contracted one. The optimal isotropic contraction during dehydration was achieved by minimizing the g-factor, which is the index value of the degree of crystallinity. The g-factor was calculated using small-angle X-ray scattering and scanning electron microscopy data for self-assembled DNA-NP superlattices before and after dehydration. The experimental success was driven by our theoretical prediction based on the geometrical calculation regarding the spatial restriction of the nearest-neighbor particle arrangement in a three-dimensional crystal lattice, which was quantified as the particle volume fraction in the lattice, φ. By reducing the nanogap to less than 4 nm through DNA-programmed sub-10 nm nanoparticle crystallization, nanofabrication on a scale exhibiting quantum effects in a bottom-up manner would be feasible.

DOI： 10.1021/acs.cgd.2c00075

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Scopus

担当区分：筆頭著者,　最終著者,　責任著者   記述言語：日本語  

担当区分：最終著者   記述言語：日本語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.1016/j.jacl.2022.01.007

Web of Science

PubMed

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Scripta Materialia  

We have investigated thermal conduction in bulk titanium oxide natural superlattices with crystallographic shear (CS) structures, in which dense planar faults are introduced with different periodicities, prepared by reductive annealing of rutile TiO2 and crystal growth by the floating zone method. High-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) revealed that (132)rutile and (121)rutile CS planes with interspacings of 2.7 and 1.0 nm were introduced in the mother rutile structure. Time-domain thermoreflectance (TDTR) revealed that the thermal conductivity decreased by the introduction of CS planes, but that the decrease is not monotonic with increasing density of CS planes. Calculation of the thermal conductivity and the mean free path for phonons revealed that a crossover from incoherent to coherent thermal conduction took place, and coherent interfaces with nanoscale periodicity were formed as thermodynamically stable phases in bulk titanium oxide natural superlattices.

DOI： 10.1016/j.scriptamat.2021.114326

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Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Crystal Growth  

Evaporation of the volatile solute from the liquid phase is a common problem for the crystal grown from solution, especially for the growth under high temperature. In the present study, a numerical model was constructed to quantitatively investigate the evaporation process in crystal growth. This model was applied in top-seeded solution growth (TSSG) of SiC crystal to simulate the transport of aluminum (Al), which is important for crystal surface morphology but easy to vaporize. The transport path of Al in the growth system was determined by analyzing the possible reactions on different boundaries. Accordingly, an improved structure was proposed to suppress the evaporation loss of Al during long-term growth, and was compared with the original case both numerically and experimentally. The simulation results showed that the improved structure could effectively decrease the Al loss by over 70%, and meanwhile had almost no influence on the thermal and flow environment in the solution. For the experimental results, the improved case presented much lower spontaneous nucleation possibilities and higher step height on the crystal surface, which matched well with the features of high Al addition in literatures. Therefore, the improved structure proposed in the present study was proven to be effective to enhance the composition stability of solution during long-term SiC solution growth, and this numerical method could be applied in the growth of other crystals facing the similar problem.

DOI： 10.1016/j.jcrysgro.2021.126448

Scopus

担当区分：最終著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Electronic Materials  

The number of data points of digitally recorded spectra have been limited by the number of multichannel detectors employed, which sometimes impedes the precise characterization of spectral peak shape. Here we describe a methodology to increase the number of data points as well as the signal-to-noise (S/N) ratio by applying Bayesian super-resolution in the analysis of spectroscopic data. In our present method, first, the hyperparameters for the Bayesian super-resolution are determined by a virtual experiment imitating actual experimental data, and the precision of the super-resolution reconstruction is confirmed by the calculation of errors from the ideal values. For validation of the super-resolution reconstruction of spectroscopic data, we applied this method to the analysis of Raman spectra. From 200 Raman spectra of a reference Si substrate with a data interval of about 0.8 cm−1, super-resolution reconstruction with a data interval of 0.01 cm−1 was successfully achieved with the promised precision. From the super-resolution spectrum, the Raman scattering peak of the reference Si substrate was estimated as 520.55 (+0.12, −0.09) cm−1, which is comparable to the precisely determined value reported in previous works. The present methodology can be applied to various kinds of spectroscopic analysis, leading to increased precision in the analysis of spectroscopic data and the ability to detect slight differences in spectral peak positions and shapes.

DOI： 10.1007/s11664-021-09326-4

Open Access

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Crystal Growth  

For solution growth of silicon carbide, it is significant to understanding the evolutionary mechanism of step bunching. This study infers that solute's incorporation into steps and transport together determines step bunching progress. The occurrence of step bunching is due to the depletion of solute in the region with high step density, caused by a high step kinetic coefficient. On the other hand, by promoting the transport of the solute in the solution, the step speed becomes uniform, thereby the step bunching can be prevented. Furthermore, we proposed a non-dimensional Damköhler number for crystal growth in step-flow mode. It correlates incorporation rates with bulk diffusion rates and can build a phase map of growth rates and step bunching stability. Several solvents are located in the phase map, demonstrating the possible usage of the phase map as a pointer for solvent designing.

DOI： 10.1016/j.jcrysgro.2021.126425

Web of Science

Scopus

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Electronic Materials  

In this study, an algorithm was constructed for the automatic detection of basal plane dislocations (BPDs) propagating in SiC epitaxial layers in photoluminescence images, and its performance was evaluated. The BPDs are the origin of the degradation of SiC bipolar devices caused by the expansion of stacking faults. The present automatic detection algorithm, based on the template-matching method, was confirmed to have high accuracy and precision, and we succeeded in visualizing the BPD density in 150-mm SiC epitaxial wafers. We confirmed that the template-matching method is applicable for the detection of crystalline defects with geometrically fixed shapes such as BPDs in SiC epitaxial layers.

DOI： 10.1007/s11664-021-09284-x

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of the Ceramic Society of Japan  

Aluminum nitride (AlN) possesses excellent thermal conductivity and electrical resistivity, which makes it an ideal candidate for high-power, high-speed integrated circuit substrates. Its low fracture toughness requires the manufacturing of thicker substrates. However, this leads to degraded heat dissipation performance. Herein, we investigated a new strategy, combining the addition of AlN whiskers and tape-casting, to overcome the low fracture toughness disadvantage. The sintered AlN with AlN whiskers addition induced the formation of a highly anisotropic microstructure with aligned rod-like grains, effectively enhancing the fracture toughness to 6.7MPam1/2, while maintaining thermal conductivity but degrading strength.

DOI： 10.2109/jcersj2.21143

Open Access

Web of Science

Scopus

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：2022 IEEE International Meeting for Future of Electron Devices, Kansai, IMFEDK 2022  

Polarized light observation is one of the promising methods for the non-destructive characterization of semiconductor wafers for power devices. We have visualized the distribution of defects in SiC wafers by birefringence imaging.

DOI： 10.1109/IMFEDK56875.2022.9975432

Scopus

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：日本結晶成長学会  

DOI： 10.19009/jjacg.49-1-06

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.5551/jat.63151

Web of Science

PubMed

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Materialia  

The expansion of double Shockley stacking faults (DSFs) in an n-type 4H-SiC substrate with a nitrogen concentration of 3.9 × 1019 cm−3 was investigated using in situ synchrotron X-ray topography. DSF expansion was observed to be suppressed and immobilized above 1590 K, along with the partial dislocation (PD) shape being changed from a straight to zig-zag configuration. For a different heating process (higher heating rate), the PDs could continue to expand, even above 1590 K. Ex situ topography experiments revealed that the DSFs close to the specimen surface expanded widely, although those expanding toward the specimen interior became immobile. One possible mechanism for this immobilization was proposed, where the core structural changes from a Si-core to the C-core by non-conservative motion induced by the interaction between the PDs and point defects (C interstitials).

DOI： 10.1016/j.mtla.2021.101246

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Materials Science and Engineering: B  

A more sophisticated simulation model is developed based on the principle of ray-tracing to simulate the grazing-incidence synchrotron X-ray topographic contrast of dislocations lying on the basal plane including basal plane dislocations and deflected threading screw and mixed dislocations in off-axis 4H-SiC crystals. The model incorporates effects of surface relaxation as well as the photoelectric absorption to predict dislocation contrast. Compared to conventional ray-tracing images, surface relaxation effects dominate dislocation contrast for diffraction near the crystal surface. The simulated dislocation contrast gradually weakens with increasing depth of the diffracted beam position within the crystal due to photoelectric absorption. The distinctive features of the net simulated dislocation images obtained by aggregating through the effective penetration depth correlate well with contrast features observed on the experimental topographic images. Depth analysis reveals that in some cases the diffracted X-rays from regions below the dislocation can contribute additional contrast features previously not considered.

DOI： 10.1016/j.mseb.2021.115281

Web of Science

Scopus

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：公益社団法人 応用物理学会  

DOI： 10.11470/jsapmeeting.2021.2.0_3410

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Crystal Growth and Design  

DNA strands are powerful tools as ligand molecules that bind nanoparticles to each other via programmable self-assembly for colloidal crystallization. We found that hydrated DNA-functionalized nanoparticle (DNA-NP) superlattices with a properly controlled volume fraction and spatial arrangement of nanoparticles successfully maintained their crystallinity even after dehydration, which involves drastic contraction. A detailed study of the structural changes was performed for the self-assembled DNA-NP sample using small-angle X-ray scattering (SAXS) after dehydration. Then, an optimal volume fraction of nanoparticles in the superlattice, φ, which minimized the level of distortion of the dehydrated superlattice, was found for each bcc and fcc structure. By acquiring clear SAXS diffraction patterns showing crystal symmetries for dehydrated DNA-NP superlattices, their lattice distortion was evaluated using our analysis technique, which is based on Hosemann's paracrystalline theory and involves SAXS and scanning electron microscopy data. Geometrical calculations substantiated the ease of movement of a nanoparticle under the influence of repulsions from adjacent particles that mainly affect the dehydration stability. These results suggest that it is possible to design the crystal structure of solid nanoparticle superlattices via DNA-guided nanoparticle assembly under a near-equilibrium state in solution as the first step, followed by dehydration under nonequilibrium conditions as the second step.

DOI： 10.1021/acs.cgd.1c00398

Open Access

Web of Science

Scopus

担当区分：筆頭著者,　責任著者   記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Physical Chemistry C  

The atomic structure of titanium-chromium oxide natural superlattices with different compositions having an ordered arrangement of crystallographic shear (CS) planes was investigated by high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) and electron diffraction, using polycrystalline ceramics prepared by arc-melting and heat treatment. Analysis of the electron diffraction patterns revealed that not only the interspacing but also the direction of planar faults changed depending on the chromium concentration. HAADF-STEM observations showed that the atomic arrangements of CS planes deviating from (121)rutile are random arrangements of (121)rutile CS planes and (011)rutile antiphase boundaries. Using a random walk model and by calculating the specularity parameter, we found that the CS planes in titanium-chromium oxides behave as coherent interfaces for phonons based on the estimation of interface roughness.

DOI： 10.1021/acs.jpcc.1c04516

Web of Science

Scopus

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.1021/acs.jpcc.1c01831

担当区分：最終著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

DOI： 10.35848/1347-4065/abde29

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Acta Materialia  

DOI： 10.1016/j.actamat.2021.116746

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：CrystEngComm  

DOI： 10.1039/d1ce00106j

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：CrystEngComm  

DOI： 10.1039/d0ce01824d

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

DOI： 10.35848/1347-4065/abc7a1

Web of Science

Scopus

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：日本結晶成長学会  

<p>  We have been developing a SiC crystal growth technique using the solution method. As a result, we have achieved the growth of ultra-high quality crystals with extremely low dislocation density. The key to this is the reduction of dislocation density by utilizing the macro-step dislocation conversion phenomenon and the suppression of surface morphology roughness by controlling the flow in the solution. In order to put these technologies to practical use, we have developed a new machine learning technique for optimizing crystal growth conditions for large-diameter crystals. In this method, a model is constructed in the computer that reproduces the actual experiment quickly and accurately, and then hundreds of thousands or millions of trials are performed using the model to derive the experimental conditions with high efficiency. This means that optimization by surrogate models, which is one of the methods of process informatics, has been realized in crystal growth. By using these techniques, we were able to achieve 6-inch crystal growth in a very short time.</p>

DOI： 10.19009/jjacg.48-3-04

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：The Japan Society of Applied Physics  

DOI： 10.11470/jsapmeeting.2020.2.0_2128

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Acta Materialia  

DOI： 10.1016/j.actamat.2020.04.019

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Physica Status Solidi (B) Basic Research  

DOI： 10.1002/pssb.201900527

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Physica Status Solidi (B) Basic Research  

DOI： 10.1002/pssb.201900553

Web of Science

Scopus

担当区分：筆頭著者,　最終著者  

掲載種別：研究論文（学術雑誌）   出版者・発行元：ACS Applied Materials and Interfaces  

DOI： 10.1021/acsami.9b22157

Web of Science

Scopus

掲載種別：研究論文（学術雑誌）   出版者・発行元：CrystEngComm  

DOI： 10.1039/c9ce01338e

Web of Science

Scopus

掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

DOI： 10.7567/1347-4065/ab0acf

Web of Science

Scopus

担当区分：筆頭著者,　責任著者  

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）  

掲載種別：研究論文（学術雑誌）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.963.80

Scopus

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：日本結晶成長学会  

<p>  Metal anodes are promising materials for rechargeable batteries because of the higher capacity. However, low cycle efficiency due to non-uniform deposition prevents them from realization. In this review, we report the crystal orientation dependence of the deposition shape of Li and Zn, which are known as attractive materials for anodes. The result shows that the both of Li and Zn morphology has crystal orientation dependence.</p>

DOI： 10.19009/jjacg.46-1-08

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：公益社団法人 日本表面真空学会  

<p>The prediction model of the result of computed fluid dynamics simulation in SiC solution growth was constructed on neural network using machine learning. Utilizing the prediction model, we can optimize quickly crystal growth conditions. In addition, the real-time visualization system was also made using the prediction model.</p>

DOI： 10.1380/vss.62.136

CiNii Books

CiNii Research

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）  

© 2019 CS Mantech. All rights reserved. We are developing solution growth technique for high-quality SiC bulk crystal. In actual, we have achieved high-quality crystal with very-low-density of threading dislocations grown by controlling the surface morphology. In order to apply this technique to large-scale crystal growth, it is necessary to control supersaturation at growth surface, flow rate and flow direction of solvent in detail. However, there are many growth parameters which should be optimized. Simulation technique based on computational fluid dynamics (CFD) is often used. However, it is still difficult to optimize growth condition by utilizing simulation technique since the calculation speed of CFD simulation is not enough to optimize the growth conditions, exhaustively. In recent, informatics including machine learning is applied to various fields including materials science. In this study, we tried to apply machine learning to the analysis of the results of CFD. We could make the model to optimize the crystal growth parameters based on a neural network model. Using the model, the optimization time became 10000 times faster. This is just a trial of “Process Informatics”.

Scopus

掲載種別：研究論文（学術雑誌）   出版者・発行元：CS MANTECH 2019 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers  

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Crystal Growth  

DOI： 10.1016/j.jcrysgro.2018.09.002

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：CrystEngComm  

DOI： 10.1039/c8ce00977e

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Applied Physics Express  

DOI： 10.7567/APEX.11.111001

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Applied Physics  

DOI： 10.1063/1.5042561

Web of Science

Scopus

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：公益社団法人 応用物理学会  

DOI： 10.11470/jsapmeeting.2018.2.0_3248

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Crystal Growth and Design  

DOI： 10.1021/acs.cgd.8b00420

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Applied Physics Letters  

DOI： 10.1063/1.5038189

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Review of Scientific Instruments  

DOI： 10.1063/1.5021116

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Applied Physics Express  

DOI： 10.7567/APEX.11.061002

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.924.39

Scopus

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.924.60

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：AIP Advances  

DOI： 10.1063/1.4997800

Web of Science

Scopus

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：公益社団法人 応用物理学会  

DOI： 10.11470/jsapmeeting.2017.2.0_3506

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：The Japan Society of Applied Physics  

DOI： 10.11470/jsapmeeting.2017.2.0_3378

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Crystal Growth  

DOI： 10.1016/j.jcrysgro.2016.11.127

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Crystal Growth  

DOI： 10.1016/j.jcrysgro.2016.11.100

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Crystal Growth  

DOI： 10.1016/j.jcrysgro.2016.09.063

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： DOI: 10.4028/www.scientific.net/MSF.897.32

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： DOI: 10.4028/www.scientific.net/MSF.897.28

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： DOI:10.4028/www.scientific.net/MSF.897.24

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Crystal Growth and Design  

DOI： 10.1021/acs.cgd.6b01710

Web of Science

Scopus

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：公益社団法人 応用物理学会  

DOI： 10.11470/jsapmeeting.2017.1.0_2741

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Crystal Growth  

DOI： 10.1016/j.jcrysgro.2016.10.045

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： http://dx.doi.org/10.1016/j.jcrysgro.2016.10.045

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： DOI: 10.1021/acs.cgd.6b01710

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： http://dx.doi.org/10.1016/j.jcrysgro.2016.09.063

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.897.28

Scopus

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.897.32

Scopus

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.897.24

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： doi:10.1021/acs.cgd.6b01657

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.1021/acs.cgd.6b01657

掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

DOI： 10.7567/JJAP.55.125601

Web of Science

Scopus

掲載種別：研究論文（学術雑誌）   出版者・発行元：Crystal Growth and Design  

DOI： 10.1021/acs.cgd.6b01107

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： doi:10.1021 / acs.cgd.6b01107

記述言語：英語   掲載種別：研究論文（学術雑誌）  

掲載種別：研究論文（学術雑誌）   出版者・発行元：Crystal Growth and Design  

DOI： 10.1021/acs.cgd.6b00711

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： doi: 10.1039/c6ce01464j

記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： doi:10.4028/www.scientific.net/MSF.858.57

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： doi:10.4028/www.scientific.net/MSF.858.1210

掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

DOI： 10.7567/JJAP.55.03DF11

Web of Science

Scopus

掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

DOI： 10.7567/JJAP.55.01AC01

Web of Science

Scopus

掲載種別：研究論文（学術雑誌）   出版者・発行元：Superconductor Science and Technology  

DOI： 10.1088/0953-2048/29/1/015013

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： doi:10.7567/JJAP.55.01AC01

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： doi:10.7567/JJAP.55.03DF11

記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： http://dx.doi.org/10.1016/j.jcrysgro.2016.11.100

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： doi:10.1016/j.jcrysgro.2016.11.127

掲載種別：研究論文（学術雑誌）   出版者・発行元：CrystEngComm  

DOI： 10.1039/c6ce01464j

Web of Science

Scopus

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：公益社団法人 日本表面科学会  

我々は負の電子親和力（NEA）状態を半導体表面に形成することで、伝導帯を伝導する電子を直接真空に取り出し分光する手法を開発した。本手法では、通常の光電子分光では評価が困難な伝導帯のバンド分散を明らかにすることができる。本講演では、この手法より高効率太陽電池の構造として期待されるナノ超格子構造によるミニバンドの評価を行った。また、これはまさに可視光照射時の半導体内の電子のオペランド評価と言える。

DOI： 10.14886/sssj2008.36.0_338

CiNii Research

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.858.57

Scopus

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.858.1210

Scopus

掲載種別：研究論文（学術雑誌）   出版者・発行元：2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015  

DOI： 10.1109/PVSC.2015.7356192

Scopus

掲載種別：研究論文（学術雑誌）   出版者・発行元：Thin Solid Films  

DOI： 10.1016/j.tsf.2015.07.068

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Crystal Growth  

DOI： 10.1016/j.jcrysgro.2015.04.032

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： doi:10.1016/j.jcrysgro.2015.04.032

記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.821-823.3

Scopus

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.821-823.18

Scopus

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.821-823.31

Scopus

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.821-823.39

Scopus

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.821-823.185

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： doi:10.1088/0953-2048/29/1/015013

掲載種別：研究論文（学術雑誌）  

Web of Science

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：IEEE  

Visible-light photoemission spectroscopy (VPS) is a novel angle-resolved photoemission spectroscopy developed by us for measuring conduction electrons emitted from a surface with negative electron affinity state. In this study, InGaAs/GaAsP quantum well superlattice was analyzed by the VPS method with changing the excitation photon energy. By comparing with comparison of the energy distribution curves obtained by different excitation energy, the first and second conduction mini-band structures were directly clarified.

Web of Science

記述言語：英語   掲載種別：研究論文（学術雑誌）  

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Acta Materialia  

DOI： 10.1016/j.actamat.2014.08.027

Web of Science

Scopus

掲載種別：研究論文（学術雑誌）   出版者・発行元：Applied Physics Letters  

DOI： 10.1063/1.4900423

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Crystal Growth  

DOI： 10.1016/j.jcrysgro.2014.01.032

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：The Japan Society of Applied Physics  

DOI： 10.11470/jsapmeeting.2014.2.0_3317

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.1107/S2053273314085842

Web of Science

記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Crystal Growth and Design  

DOI： 10.1021/cg500527t

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Applied Physics Express  

DOI： 10.7567/APEX.7.065501

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Crystal Growth  

DOI： 10.1016/j.jcrysgro.2014.02.034

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Crystal Growth  

DOI： 10.1016/j.jcrysgro.2014.01.044

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.4028/www.scientific.net/MSF.778-780.63

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.4028/www.scientific.net/MSF.778-780.67

記述言語：英語  

DOI： DOI:10.1109/PVSC.2014.6925534

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： DOI: 10.1016/j.actamat.2014.08.027

掲載種別：研究論文（学術雑誌）  

Web of Science

掲載種別：研究論文（学術雑誌）   出版者・発行元：日本結晶成長学会  

Silicon carbide forms polytypes due to different stacking arrangements of Si and C. For the use of semiconductor materials, it is necessary to fabricate a single polytype material. In this paper, firstly, determination factors of polytypes are introduced from both experimental and theoretical viewpoints, and the difficulty of the polytype control based on thermal stability is shown. Next, the actual control techniques in sublimation growth method and CVD method are shown to be based on the concept that the polytype sequence of seed crystal continues to the grown crystal. Finally, we propose the kinetic polytype control method based on the growth speed difference among polytypes in SiC solution growth.

DOI： 10.19009/jjacg.40.4_253

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014  

DOI： 10.1109/PVSC.2014.6925534

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Crystal Growth and Design  

DOI： 10.1021/cg401324f

Web of Science

Scopus

記述言語：日本語   掲載種別：研究論文（学術雑誌）  

記述言語：日本語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

DOI： 10.7567/JJAP.52.08JE17

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：APL Materials  

DOI： 10.1063/1.4818357

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Crystal Growth and Design  

DOI： 10.1021/cg400706u

Web of Science

Scopus

掲載種別：研究論文（学術雑誌）   出版者・発行元：公益社団法人 応用物理学会  

<p>パワーデバイス用材料として現在盛んに研究開発が行われているSiCにおいては，基板結晶の高品質化が極めて重要である．溶液成長法はそれを実現する手法として注目を集めつつある．我々はSiC溶液成長過程において，結晶に含まれる貫通転位が基底面内の転位やフランク型欠陥へ頻繁に変換することを見いだし，さらにこの現象を利用して多くの貫通転位を結晶外部に放出させることで，高品質結晶が実現されることを示してきた．最近では，ほかのグループから結晶成長速度の向上や結晶口径の拡大に関する報告もなされている．本格的な高品質バルク結晶成長技術として確立されるまで，あと少しのところにきている．</p>

DOI： 10.11470/oubutsu.82.4_326

記述言語：日本語   掲載種別：研究論文（学術雑誌）  

記述言語：日本語   掲載種別：研究論文（学術雑誌）  

記述言語：日本語   掲載種別：研究論文（学術雑誌）  

記述言語：日本語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.4028/www.scientific.net/MSF.740-742.15

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.4028/www.scientific.net/MSF.740-742.189

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.4028/www.scientific.net/MSF.740-742.311

掲載種別：研究論文（学術雑誌）  

Web of Science

掲載種別：研究論文（学術雑誌）   出版者・発行元：Conference Record of the IEEE Photovoltaic Specialists Conference  

DOI： 10.1109/PVSC.2013.6744154

Scopus

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：IEEE  

Mini-bands formed in superlattice structures are often used for an intermediate-band solar cell. In order to design an optimized structure, it is important to measure the mini-band dispersions which influence transport properties and solar-energy conversion efficiency. In this study, we directly observed the dispersions of mini-bands formed in InGaAs/AlGaAs quantum-well superlattices by angle-resolved photoemission spectroscopy with synchrotron radiation light. The short-period energy dispersions due to the mini-bands around the X-valley were clearly obtained. In addition, the effective mass coefficient of each mini-band could be individually evaluated.

Web of Science

掲載種別：研究論文（学術雑誌）  

Web of Science

掲載種別：研究論文（学術雑誌）   出版者・発行元：日本結晶成長学会  

Solution growth has a potential to achieve high quality bulk SiC growth. In this paper we review current advances in SiC solution growth specially focusing on the crystal quality. During the solution growth, threading dislocations tend to be converted to basal plane defects by the step-flow of macrosteps. This phenomenon implies that all dislocations can be excluded from the lateral face of the crystal in principle. Actually, high quality SiC crystal with very low threading dislocation density was obtained applying the dislocation conversion during the solution growth.

DOI： 10.19009/jjacg.40.1_25

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Conference Record of the IEEE Photovoltaic Specialists Conference  

DOI： 10.1109/PVSC.2013.6744149

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：一般社団法人 日本生物物理学会  

DOI： 10.2142/biophys.53.S92_5

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Crystal Growth  

DOI： 10.1016/j.jcrysgro.2011.11.041

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Japan Society of Applied Physics  

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Applied Physics Express  

DOI： 10.1143/APEX.5.115501

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Crystal Growth and Design  

DOI： 10.1021/cg300360h

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：一般社団法人電子情報通信学会  

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：一般社団法人電子情報通信学会  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.1143/APEX.5.035203

Web of Science

Scopus

掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.717-720.351

Web of Science

Scopus

掲載種別：研究論文（国際会議プロシーディングス）   出版者・発行元：Materials Science Forum  

DOI： 10.4028/www.scientific.net/MSF.717-720.53

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）  

Web of Science

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：TAYLOR & FRANCIS LTD  

The crystal structure and microstructure of ReSi1.75 were investigated by synchrotron X-ray diffraction combined with scanning transmission electron microscopy. ReSi1.75 contains an ordered arrangement of vacancies in Si sites in the underlying tetragonal C11(b) lattice of the MoSi2-type and the crystal structure is monoclinic with the space group Cm. Atomic positions of Si atoms near vacancies are considerably displaced from the corresponding positions in the parent C11(b) structure, and they exhibit anomalously large local thermal vibration accompanied by large values of atomic displacement parameter. There are four differently-oriented domains with two of them being related to each other by the 90 degrees rotation about the c-axis of the underlying C11(b) lattice and the other two being their respective twins. The habit planes for domain boundaries observed experimentally are consistent with those predicted with ferroelastic theory.

DOI： 10.1080/14786435.2011.570278

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）  

The crystal structure of thermoelectric rhenium silicide with an ordered arrangement of vacancies is investigated by utilizing spherical aberration (Cs) corrected scanning transmission electron microscopy (STEM) combined with synchrotron X-ray diffraction and conventional transmission electron microscopy. By STEM Cs corrected imaging, we can clearly observe Si vacancies in rhenium silicide, which is impossible without Cs correction. In addition, significantly reduced contrast levels are noted in STEM images for particular Si sites near vacancies. From the STEM image simulation, the reduced contrast levels are concluded to be due to anomalously large local thermal vibration of these Si atoms. The crystal structure of rhenium silicide can be successfully refined by the synchrotron X-ray diffraction starting with the deduced structure model from the STEM images and the occurrence of large local thermal vibration can be qualitatively confirmed. Furthermore, we confirm the validity of the refined crystal structure of rhenium silicide by comparing experimental images with simulated image generating with the refined crystal structure parameters. © 2011 Materials Research Society.

DOI： 10.1557/opl.2011.43

Scopus

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：公益社団法人 日本セラミックス協会  

AlNは高熱伝導絶縁体で、パワーデバイス用放熱基板として期待されている。我々は、焼結法に代わる手法として、Al融液と窒素からAlNを成長する融液窒化法に着目し、これまでに、Mg蒸気と窒素ガスを同時に外部から供給する手法で、完全にAl融液をAlNへと変換させることに成功している。しかし、得られたAlNには高密度な部分とポーラス部分が混在していた。そこで、高密度AlNの形成メカニズムを解明するために、原料をAl板に変更し、Mg蒸気の供給時間を制御して実験を行った。窒化は原料表面のみで生じており、Mg蒸気が融液表面の酸化膜と反応して、酸化膜が破れ、そこからAl融液が酸化膜上にしみ出し、しみ出した融液と窒素が反応し、AlNを生成するというメカニズムが示唆された。

DOI： 10.14853/pcersj.2011F.0.761.0

CiNii Research

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：公益社団法人 日本セラミックス協会  

熱電材料としても注目される、ナノメートルオーダーの面間隔のシア構造を内包するTiO_2-xの熱伝導機構の解析を摂動分子動力学法により行った。得られた熱伝導度は大きな方位依存性を示し、シア面垂直方向についてはシア面間隔の減少と共に熱伝導度減少が見られたが、面間隔が数Åの範囲では、シア面平行方向の熱伝導度の面間隔依存性は非常に小さなものでありほぼ一定であった。また直感に反して、シア面に垂直方向の熱伝導度がシア面平行方向の熱伝導度よりも低いことがわかった。これはシア面に沿った原子の配位環境の乱れに起因するものであると考えられる。

DOI： 10.14853/pcersj.2011F.0.759.0

CiNii Research

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：AMER INST PHYSICS  

The thermoelectric properties of Magneli phase titanium oxides TinO2n-1 (n=2,3,...) have been investigated, paying special attention to how the thermoelectric performance can be altered by changing the microstructure. Dense polycrystalline specimens with nominal composition of TiO2-x (x=0.05, 0.10, 0.15, and 0.20) prepared by conventional hot-pressing are all identified to be one of the Magneli phases, in which crystallographic shear planes are regularly introduced according to the oxygen deficiency. Electrical conduction is n-type for all specimens and the carrier concentration increases with the increase in the oxygen deficiency. The values of lattice thermal conductivity, on the other hand, decrease with the increase in the oxygen deficiency, which can be attributed to phonon scattering at the crystallographic shear plane. The largest value of thermoelectric figure of merit Z, 1.6 X 10(-4) K-1 was obtained at 773 K for the hot-pressed specimen of TiO1.90. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3498801]

DOI： 10.1063/1.3498801

Web of Science

Scopus

記述言語：英語   掲載種別：研究論文（大学，研究機関等紀要）  

DOI： 10.1557/PROC-1218-Z01-04

掲載種別：研究論文（学術雑誌）   出版者・発行元：Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy  

DOI： 10.2497/jjspm.57.213

Scopus

記述言語：英語   掲載種別：研究論文（学術雑誌）  

担当区分：筆頭著者   記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

記述言語：日本語   出版者・発行元：日本結晶成長学会  

CiNii Books

J-GLOBAL

J-GLOBAL

J-GLOBAL

記述言語：日本語   出版者・発行元：公益社団法人 日本金属学会  

DOI： 10.2320/materia.59.145

CiNii Books

CiNii Research

J-GLOBAL

記述言語：日本語  

J-GLOBAL

記述言語：日本語  

J-GLOBAL

記述言語：日本語  

J-GLOBAL

記述言語：日本語  

J-GLOBAL

記述言語：日本語  

J-GLOBAL

記述言語：日本語  

J-GLOBAL

記述言語：日本語  

J-GLOBAL

記述言語：日本語  

J-GLOBAL

J-GLOBAL

記述言語：日本語   掲載種別：研究発表ペーパー・要旨（全国大会，その他学術会議）  

記述言語：日本語  

J-GLOBAL

記述言語：日本語   掲載種別：研究発表ペーパー・要旨（全国大会，その他学術会議）  

J-GLOBAL

記述言語：日本語  

J-GLOBAL

J-GLOBAL

記述言語：英語   掲載種別：速報，短報，研究ノート等（学術雑誌）  

J-GLOBAL

記述言語：日本語   出版者・発行元：一般社団法人日本物理学会  

CiNii Books

記述言語：英語   出版者・発行元：IEEE  

We have proposed a novel angle-resolved photoemission spectroscopy to measure the conduction electrons emitted from a surface with negative electron affinity state. We call this method visible-light photoemission spectroscopy (VPS). In the present study, the conduction miniband structure formed in a superlattice was evaluated by the VPS method. As a result, we succeeded to obtain the dispersion of the miniband. In addition, the effective mass of the miniband was quantitatively determined from the observed dispersion. Therefore, we believe that VPS is a quite powerful tool for the evaluation of intermediate-band solar cells.

DOI： 10.1109/PVSC.2014.6925534

Web of Science

記述言語：日本語   掲載種別：速報，短報，研究ノート等（学術雑誌）  

記述言語：日本語   掲載種別：速報，短報，研究ノート等（学術雑誌）  

記述言語：日本語   掲載種別：速報，短報，研究ノート等（学術雑誌）  

記述言語：日本語  

J-GLOBAL

記述言語：日本語  

J-GLOBAL

記述言語：日本語  

J-GLOBAL

記述言語：英語   掲載種別：速報，短報，研究ノート等（学術雑誌）  

記述言語：英語   出版者・発行元：JAPAN SOC APPLIED PHYSICS  

The crystal structure of rhenium silicide with an anomalous ordered arrangement of vacancies has been investigated by utilizing spherical-aberration (C-s)-corrected scanning transmission electron microscopy (STEM). Using C-s-corrected STEM imaging, we directly observe for the first time ordered silicon vacancies in thermoelectric rhenium silicide accompanied by anomalously large local thermal vibration ("rattling" motion) of silicon atoms in their adjacent sites. (C) 2012 The Japan Society of Applied Physics

DOI： 10.1143/APEX.5.035203

Web of Science

Scopus

J-GLOBAL

記述言語：英語  

The crystal structure of thermoelectric rhenium silicide with an ordered arrangement of vacancies is investigated by utilizing spherical aberration (Cs) corrected scanning transmission electron microscopy (STEM) combined with synchrotron X-ray diffraction and conventional transmission electron microscopy. By STEM Cs corrected imaging, we can clearly observe Si vacancies in rhenium silicide, which is impossible without Cs correction. In addition, significantly reduced contrast levels are noted in STEM images for particular Si sites near vacancies. From the STEM image simulation, the reduced contrast levels are concluded to be due to anomalously large local thermal vibration of these Si atoms. The crystal structure of rhenium silicide can be successfully refined by the synchrotron X-ray diffraction starting with the deduced structure model from the STEM images and the occurrence of large local thermal vibration can be qualitatively confirmed. Furthermore, we confirm the validity of the refined crystal structure of rhenium silicide by comparing experimental images with simulated image generating with the refined crystal structure parameters. © 2011 Materials Research Society.

DOI： 10.1557/opl.2011.43

Scopus

記述言語：英語   出版者・発行元：TAYLOR & FRANCIS LTD  

The crystal structure and microstructure of ReSi1.75 were investigated by synchrotron X-ray diffraction combined with scanning transmission electron microscopy. ReSi1.75 contains an ordered arrangement of vacancies in Si sites in the underlying tetragonal C11(b) lattice of the MoSi2-type and the crystal structure is monoclinic with the space group Cm. Atomic positions of Si atoms near vacancies are considerably displaced from the corresponding positions in the parent C11(b) structure, and they exhibit anomalously large local thermal vibration accompanied by large values of atomic displacement parameter. There are four differently-oriented domains with two of them being related to each other by the 90 degrees rotation about the c-axis of the underlying C11(b) lattice and the other two being their respective twins. The habit planes for domain boundaries observed experimentally are consistent with those predicted with ferroelastic theory.

DOI： 10.1080/14786435.2011.570278

Web of Science

Scopus

記述言語：英語   出版者・発行元：AMER INST PHYSICS  

The thermoelectric properties of Magneli phase titanium oxides TinO2n-1 (n=2,3,...) have been investigated, paying special attention to how the thermoelectric performance can be altered by changing the microstructure. Dense polycrystalline specimens with nominal composition of TiO2-x (x=0.05, 0.10, 0.15, and 0.20) prepared by conventional hot-pressing are all identified to be one of the Magneli phases, in which crystallographic shear planes are regularly introduced according to the oxygen deficiency. Electrical conduction is n-type for all specimens and the carrier concentration increases with the increase in the oxygen deficiency. The values of lattice thermal conductivity, on the other hand, decrease with the increase in the oxygen deficiency, which can be attributed to phonon scattering at the crystallographic shear plane. The largest value of thermoelectric figure of merit Z, 1.6 X 10(-4) K-1 was obtained at 773 K for the hot-pressed specimen of TiO1.90. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3498801]

DOI： 10.1063/1.3498801

Web of Science

Scopus

記述言語：英語  

DOI： 10.1557/PROC-1218-Z01-04

Scopus

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