Updated on 2021/05/06

写真a

 
HARADA Shunta
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Associate professor
Title
Associate professor
Contact information
メールアドレス
External link

Degree 1

  1. 博士(工学) ( 2011.3   京都大学 ) 

Research Interests 4

  1. 熱伝導

  2. 結晶欠陥

  3. 結晶成長

  4. 機械学習

Research Areas 1

  1. Nanotechnology/Materials / Structural materials and functional materials

Current Research Project and SDGs 4

  1. ピコスケール構造制御による熱輸送制御

  2. パワーデバイスSiC結晶の欠陥制御

  3. 半導体検査への機械学習・AI応用

  4. 半導体/材料製造プロセスへの機械学習・AI応用

Research History 6

  1. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Reserch of Future Electronics   Associate professor

    2020.6

  2. Nagoya University   Lecturer

    2017.4 - 2020.5

  3. Nagoya University   Assistant Professor

    2015.10 - 2017.3

  4. Nagoya University   Assistant Professor

    2014.4 - 2015.9

  5. Nagoya University   Assistant Professor

    2011.4 - 2014.4

  6. Kyoto University   Researcher

    2008.4 - 2011.3

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Education 2

  1. Kyoto University

    2006.4 - 2011.3

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    Country: Japan

  2. Kyoto University   Faculty of Engineering

    2002.4 - 2006.3

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    Country: Japan

Professional Memberships 3

  1. 応用物理学会   会員

    2011.7

  2. 日本結晶成長学会   会員

    2011.11

  3. The Japan institute of metals

    2005.11

Committee Memberships 9

  1. 応用物理学会 先進パワー半導体分科会   幹事  

    2016.4   

  2. 応用物理学会インフォマティクス応用研究グループ   幹事  

    2020.4   

  3. ICSCRM組織委員会   委員  

    2020.12   

  4. SSDM2017 論文委員会   Area 14 vice-chair  

    2017.1 - 2017.12   

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    Committee type:学協会

  5. SSDM2016 論文委員会   編集委員  

    2016.1 - 2016.12   

  6. ICCGE-18 現地実行委員会   実行委員  

    2015.9 - 2016.12   

  7. SSDM2015 論文委員会   編集委員  

    2015.1 - 2015.12   

  8. ISPlasma2015 / IC-PLANTS2015   現地実行委員  

    2015.1 - 2015.12   

  9. SSDM2014 論文委員会   委員  

    2014.1 - 2014.12   

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Awards 6

  1. 第14回奨励賞

    2016  

  2. ISPlasma2015 / IC-PLANTS2015 Best presentation award

    2015.3  

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    Country:Japan

  3. 愛知県若手研究者イノベーション創出奨励事業第9回「わかしゃち奨励賞」最優秀賞

    2015.1  

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    Country:Japan

  4. Award for Encouragement of Research in IUMRS-ICA2014

    2014.10  

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    Country:Japan

  5. 2010 International Metallographic Contest (IMC) class 3 (Transmission and Analytical), Third place

    2010.8  

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    Country:United States

  6. 第60回日本金属学会金属組織写真賞優秀賞

    2010.3  

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    Country:Japan

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Papers 140

  1. Design of automatic detection algorithm for dislocation contrasts in birefringence images of SiC wafers

    Kawata Akira, Murayama Kenta, Sumitani Shogo, Harada Shunta

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abde29

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  2. Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC International coauthorship

    Fujie Fumihiro, Peng Hongyu, Ailihumaer Tuerxun, Raghothamachar Balaji, Dudley Michael, Harada Shunta, Tagawa Miho, Ujihara Toru

    ACTA MATERIALIA   Vol. 208   2021.4

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Acta Materialia  

    DOI: 10.1016/j.actamat.2021.116746

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  3. Geometrical design of a crystal growth system guided by a amachine learning algorithm

    Wancheng Yu, Can Zhu, Wei Huang, Dang Yifan, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara

    CrystEngComm   Vol. 23 ( 14 ) page: 2695 - 2702   2021.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/d1ce00106j

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  4. Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth

    Dang Yifan, Zhu Can, Ikumi Motoki, Takaishi Masaki, Yu Wancheng, Huang Wei, Liu Xinbo, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru

    CRYSTENGCOMM   Vol. 23 ( 9 ) page: 1982 - 1990   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:CrystEngComm  

    DOI: 10.1039/d0ce01824d

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  5. Analysis of dislocation line tilt in GaN single crystal by Raman spectroscopy

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SA )   2021.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abc7a1

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  6. Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography

    Fujie Fumihiro, Harada Shunta, Hanada Kenji, Suo Hiromasa, Koizumi Haruhiko, Kato Tomohisa, Tagawa Miho, Ujihara Toru

    ACTA MATERIALIA   Vol. 194   page: 387 - 393   2020.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.actamat.2020.04.019

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  7. Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

    Inotsume Sho, Kokubo Nobuhiko, Yamada Hisashi, Onda Shoichi, Kojima Jun, Ohara Junji, Harada Shunta, Tagawa Miho, Ujihara Toru

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201900527

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  8. Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

    Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201900553

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  9. 機械学習を活用した SiC 高品質結晶成長条件のデザイン Invited Reviewed

    原田俊太, 林宏益, 角岡洋介, 朱燦, 鳴海大翔, 沓掛健太朗, 宇治原徹

    まてりあ   Vol. 59 ( 3 ) page: 145 - 152   2020.3

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    Authorship:Lead author, Last author  

  10. Effect of Crystal Orientation of Cu Current Collectors on Cycling Stability of Li Metal Anodes

    Ishikawa Kohei, Harada Shunta, Tagawa Miho, Ujihara Toru

    ACS APPLIED MATERIALS & INTERFACES   Vol. 12 ( 8 ) page: 9341 - 9346   2020.2

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    Publishing type:Research paper (scientific journal)   Publisher:ACS Applied Materials and Interfaces  

    DOI: 10.1021/acsami.9b22157

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  11. Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal

    Liu Xinbo, Zhu Can, Harada Shunta, Tagawa Miho, Ujihara Toru

    CRYSTENGCOMM   Vol. 21 ( 47 ) page: 7260 - 7265   2019.12

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    Publishing type:Research paper (scientific journal)   Publisher:CrystEngComm  

    DOI: 10.1039/c9ce01338e

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  12. Nondestructive visualization of threading dislocations in GaN by micro raman mapping

    Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC )   2019.6

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab0acf

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  13. SiC溶液成長による高品質化と機械学習の応用 Invited Reviewed

    原田俊太, 朱燦, 角岡洋介, 沓掛健太朗, 宇治原徹

      Vol. 14 ( 1 ) page: 13 - 18   2019.6

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    Authorship:Lead author, Corresponding author  

  14. Machine learning for SiC top-seeded solution growth - Prediction, optimization and visualization Reviewed

    Toru Ujihara, Yosuke Tsunooka, Goki Hatasa, Can Zhu, Kentaro Kutsukake, Taka Narumi, Shunta Harada, Miho Tagawa

    CS MANTECH 2019 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers     2019

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    © 2019 CS Mantech. All rights reserved. We are developing solution growth technique for high-quality SiC bulk crystal. In actual, we have achieved high-quality crystal with very-low-density of threading dislocations grown by controlling the surface morphology. In order to apply this technique to large-scale crystal growth, it is necessary to control supersaturation at growth surface, flow rate and flow direction of solvent in detail. However, there are many growth parameters which should be optimized. Simulation technique based on computational fluid dynamics (CFD) is often used. However, it is still difficult to optimize growth condition by utilizing simulation technique since the calculation speed of CFD simulation is not enough to optimize the growth conditions, exhaustively. In recent, informatics including machine learning is applied to various fields including materials science. In this study, we tried to apply machine learning to the analysis of the results of CFD. We could make the model to optimize the crystal growth parameters based on a neural network model. Using the model, the optimization time became 10000 times faster. This is just a trial of “Process Informatics”.

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  15. Machine learning for SiC top-seeded solution growth - Prediction, optimization and visualization

    Ujihara T.

    CS MANTECH 2019 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers     2019

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    Publishing type:Research paper (scientific journal)   Publisher:CS MANTECH 2019 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers  

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  16. Evaluation of basal plane dislocation behavior in the epitaxial layer on a 4H-SiC wafer fabricated by the solution growth method

    Seki K.

    Materials Science Forum   Vol. 963 MSF   page: 80 - 84   2019

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    Publishing type:Research paper (scientific journal)   Publisher:Materials Science Forum  

    DOI: 10.4028/www.scientific.net/MSF.963.80

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  17. The Prediction Model of Crystal Growth Simulation Built by Machine Learning and Its Applications

    UJIHARA Toru, TSUNOOKA Yosuke, HATASA Goki, KUTSUKAKE Kentaro, ISHIGURO Akio, MURAYAMA Kenta, NARUMI Taka, HARADA Shunta, TAGAWA Miho

    Vacuum and Surface Science   Vol. 62 ( 3 ) page: 136 - 140   2019

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Japan Society of Vacuum and Surface Science  

    <p>The prediction model of the result of computed fluid dynamics simulation in SiC solution growth was constructed on neural network using machine learning. Utilizing the prediction model, we can optimize quickly crystal growth conditions. In addition, the real-time visualization system was also made using the prediction model.</p>

    DOI: 10.1380/vss.62.136

    CiNii Article

  18. The relationships between crystal orientation and morphology of electrode from a perspective of crystal growth

    Ishikawa Kohei, Mitsuhashi Takato, Ito Yasumasa, Takeuchi Yukihisa, Harada Shunta, Tagawa Miho, Ujihara Toru

    Journal of the Japanese Association for Crystal Growth   Vol. 46 ( 1 ) page: 136-140   2019

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Japanese Association for Crystal Growth  

    <p>  Metal anodes are promising materials for rechargeable batteries because of the higher capacity. However, low cycle efficiency due to non-uniform deposition prevents them from realization. In this review, we report the crystal orientation dependence of the deposition shape of Li and Zn, which are known as attractive materials for anodes. The result shows that the both of Li and Zn morphology has crystal orientation dependence.</p>

    DOI: 10.19009/jjacg.46-1-08

    CiNii Article

  19. Improvement mechanism of sputtered AlN films by high-temperature annealing

    Shiyu Xiao, Ryoya Suzuki, Hideto Miyake, Shunta Harada, Toru Ujihara

    Journal of Crystal Growth   Vol. 502   page: 41 - 44   2018.11

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Elsevier BV  

    DOI: 10.1016/j.jcrysgro.2018.09.002

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  20. High-speed prediction of computational fluid dynamics simulation in crystal growth

    Tsunooka Yosuke, Kokubo Nobuhiko, Hatasa Goki, Harada Shunta, Tagawa Miho, Ujihara Toru

    CRYSTENGCOMM   Vol. 20 ( 41 ) page: 6546 - 6550   2018.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/c8ce00977e

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  21. Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

    Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 11 )   2018.11

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    DOI: 10.7567/APEX.11.111001

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  22. Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC

    Kato Masashi, Katahira Shinya, Ichikawa Yoshihito, Harada Shunta, Kimoto Tsunenobu

    JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 9 )   2018.9

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    DOI: 10.1063/1.5042561

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  23. In Situ Observation of Chiral Symmetry Breaking in NaClO3 Chiral Crystallization Realized by Thermoplasmonic Micro-Stirring

    Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Harada Shunta, Ujihara Tom, Uda Satoshi, Miyamoto Katsuhiko, Omatsu Takashige

    CRYSTAL GROWTH & DESIGN   Vol. 18 ( 8 ) page: 4230 - 4239   2018.8

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    DOI: 10.1021/acs.cgd.8b00420

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  24. Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation

    Fujie Fumihiro, Harada Shunta, Koizumi Haruhiko, Murayama Kenta, Hanada Kenji, Tagawa Miho, Ujihara Toru

    APPLIED PHYSICS LETTERS   Vol. 113 ( 1 )   2018.7

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    DOI: 10.1063/1.5038189

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  25. Development of angle-resolved spectroscopy system of electrons emitted from a surface with negative electron affinity state

    Ichihashi Fumiaki, Dong Xinyu, Inoue Akito, Kawaguchi Takahiko, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Toru

    REVIEW OF SCIENTIFIC INSTRUMENTS   Vol. 89 ( 7 )   2018.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5021116

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  26. Detection of edge component of threading dislocations in GaN by Raman spectroscopy

    Nobuhiko Kokubo, Yosuke Tsunooka, Fumihiro Fujie, Junji Ohara, Kazukuni Hara, Shoichi Onda, Hisashi Yamada, Mitsuaki Shimizu, Shunta Harada, Miho Tagawa, Toru Ujihara

    Applied Physics Express   Vol. 11 ( 6 )   2018.6

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japan Society of Applied Physics  

    We succeeded in measuring the density and direction of the edge component of threading dislocations (TDs) in c-plane (0001) GaN by micro- Raman spectroscopy mapping. In the micro-Raman spectroscopy mapping of the E2 H peak shift between 567.85 and 567.75 cm-1, six different contrast images are observed toward directions of h1-100i. By comparing X-ray topography and etch pit images, the E2 H peak shift is observed where the edge component of TDs exists. In contrast, the E2 H peak is not observed where the screw component of TDs exists.

    DOI: 10.7567/APEX.11.061002

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  27. Dislocation behavior in bulk crystals grown by TSSG method

    Kazuaki Seki, Kazuhiko Kusunoki, Yutaka Kishida, Hiroshi Kaido, Koji Moriguchi, Motohisa Kado, Hironori Daikoku, Takayuki Shirai, Mitsutoshi Akita, Akinori Seki, Hiroaki Saito, Shunta Harada, Toru Ujihara

    Materials Science Forum   Vol. 924   page: 39 - 42   2018

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:Trans Tech Publications Ltd  

    The dislocation behavior during bulk crystal growth on the 4H-SiC (000-1) C-face using the solution method was investigated. A 2 inch wafer with a 4 degree off angle was fabricated from a bulk crystal grown by the TSSG method, and the dislocations in the crystal were evaluated using synchrotron X-ray topography and TEM observation. From the topograph images, it was found that the TSD density remarkably decreased as the growth progressed. Furthermore, the TEM observation suggested that TSD decreases as the threading dislocations convert to in-plane defects toward the center of the crystal. Conventionally, it was considered that conversion of threading dislocations hardly occurs in solution growth on the C-face. However, it is thought that this phenomenon was not observable because the conversion efficiency is remarkably low. We speculate that dislocations may be converted by suddenly making macrosteps during bulk growth.

    DOI: 10.4028/www.scientific.net/MSF.924.39

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  28. Suppression of polytype transformation with extremely low-dislocation-density 4H-SiC crystal in two-step solution method

    Kenta Murayama, Shunta Harada, Fumihiro Fujie, Xin Bo Liu, Ryota Murai, Can Zhu, Kenji Hanada, Miho Tagawa, Toru Ujihara

    Materials Science Forum   Vol. 924   page: 60 - 63   2018

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    We achieved the growth of extremely-high quality SiC crystal with two-step solution method with specially-designed seed crystals. The two-step growth consists of 1st step growth on Si-face for the reduction of threading dislocations and 2nd step growth on C-face for the reduction of basal plane dislocations and thickening. In this method, we can make the dislocation density extremely low, while the polytype easily changes during growth due to the absence of spiral hillocks originating from threading screw dislocation (TSD). In this study, we prepared specially designed seed crystals for both 1st and 2nd growth steps to provide steps continuously. In the seeds, a few TSDs exist at the upper-side of the step structure. Consequently, we demonstrated the suppression of the polytype transformation during the C-face growth with extremely low-dislocation-density crystal. Accordingly, we successfully obtained extremely low-dislocation density 4H-SiC with TSD, TED and BPD density of 11, 385 and 28 cm-2.

    DOI: 10.4028/www.scientific.net/MSF.924.60

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  29. Temperature dependence of carrier relaxation time in gallium phosphide evaluated by photoemission measurements

    Fumiaki Ichihashi, Takahiko Kawaguchi, Xinyu Dong, Makoto Kuwahara, Takahiro Ito, Shunta Harada, Miho Tagawa, Toru Ujihara

    AIP ADVANCES   Vol. 7 ( 11 )   2017.11

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AMER INST PHYSICS  

    For understanding of carrier behavior in semiconductors, it is important to measure the carrier relaxation time. In the present study, the relaxation times of inter-valley transition from the valley to the X valley in GaP were evaluated by near-band-gap photoemission spectroscopy of electrons emitted from a surface with a negative electron affinity state. In the energy distribution curves, two peaks, which originate from the electron population accumulated in the valley and the X valley, were observed. From the temperature dependence of the energy of these two peaks, we could successfully evaluate the temperature dependence of the energies of the valley and the X valley. Furthermore, the relaxation times of the inter-valley transition from the valley to the X valley were estimated from the ratio of the electron concentration of the valley and the X valley. The values of the relaxation time are good agreement with the previous studies. These results indicate that the near-band-gap photoemission spectroscopy can directly investigate conduction electrons and also evaluate the carrier dynamics in semiconductor. (C) 2017 Author(s).

    DOI: 10.1063/1.4997800

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  30. Morphology of AlN whiskers grown by reacting N-2 gas and Al vapor

    M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 576 - 580   2017.6

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    We have investigated the morphology of AlN whiskers on a polycrystalline AlN substrate by using Fe-Al alloy melts under the different synthesis conditions. Formation density of the AlN whiskers increases and the diameter of the whisker decreases with increasing Al content of the Fe-Al alloy melt. Most of the AlN whiskers were zigzag shape with the hexagonal cross section. The longitudinal direction was the [0001] direction. The facet with the zigzag shape was the {1101} or {1101} pyramidal plane and the period of the zigzag facet was almost constant. The average diameter of the whiskers and the period of the zigzag facet decrease with increasing Al content. At the initial stage of the whisker formation, the island of AlN formed on the AlN substrate and the pyramidal facet grows via step-flow growth. From the observation, we discussed the possible mechanism for the formation of the zigzag-shape AlN whiskers.

    DOI: 10.1016/j.jcrysgro.2016.11.127

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  31. Two-step SiC solution growth for dislocation reduction

    K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara

    Journal of Crystal Growth   Vol. 468   page: 874 - 878   2017.6

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    We propose a two-step silicon carbide (SiC) solution growth method for dislocation reduction to produce the high-quality silicon carbide SiC crystals. The two-step growth consists of the growth on a Si face and a C face. Firstly, seed crystal with low threading dislocation density was prepared by the growth on a Si face utilizing the threading dislocation conversion. Secondly, the growth on the C face was conducted on the prepared seed crystal with low threading dislocation density to reduce the density of basal plane dislocations and keep smooth growth surface. We demonstrate that the two-step growth leads to the reduction of the density for all types of dislocations by two orders of magnitude compared to the initial density of the seed crystal.

    DOI: 10.1016/j.jcrysgro.2016.11.100

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  32. Phase transition process in DDAB supported lipid bilayer

    Takumi Isogai, Sakiko Nakada, Naoya Yoshida, Hayato Sumi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 88 - 92   2017.6

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    We report the results of microscope measurements examining the phase transition process of a cationic lipid, Dimethyldioctadecylammonium bromide (DDAB) supported lipid bilayer (SLB). Due to lateral fluidity and strong electrostatic interaction with DNA, SLB serves as a fluid substrate for assembling 2D lattices of DNA functionalized nanoparticles (DNA-NPs): lipid molecules work as carriers for transporting DNA-NPs. By fluorescence microscopy and atomic force microscopy (AFM), two types of phase transitions, which correspond to liquid crystalline-gel and liquid crystalline-interdigitated gel (L beta I) ones, were observed in DDAB SLB during cooling. In thermal equilibrium at room temperature both gel and L beta I phases have enough adsorbed amounts of DNA-NPs which indicate that both domains have enough surface charge densities for adsorbing DNA-NPs, however, during phase transition DNA-NPs preferably distributed into L beta I phase.

    DOI: 10.1016/j.jcrysgro.2016.09.063

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  33. SiC solution growth on Si face with extremely low density of threading screw dislocations for suppression of polytype transformation

    "K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara"

    Mater. Sci. Forum   Vol. 897   page: 24-27   2017.5

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    DOI: DOI:10.4028/www.scientific.net/MSF.897.24

  34. Solvent design for high-purity SiC solution growth

    "S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara"

    Mater. Sci. Forum   Vol. 897   page: 32-35   2017.5

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    DOI: DOI: 10.4028/www.scientific.net/MSF.897.32

  35. Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth

    "T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara"

    Mater. Sci. Forum   Vol. 897   page: 28-31   2017.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: DOI: 10.4028/www.scientific.net/MSF.897.28

  36. Crystal Orientation Dependence of Precipitate Structure of Electrodeposited Li Metal on Cu Current Collectors

    K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara

    Cryst. Growth Des.   Vol. 17 ( 5 ) page: 2379 - 2385   2017.5

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AMER CHEMICAL SOC  

    Dendritic growth at the Li anode during charging is caused by a morphological inhomogeneity of Li electrodeposition. In this study, we investigate the dependence of the morphology of Li electrodeposited on a polycrystalline Cu current collector on the Cu grain orientation both experimentally and by numerical analysis. The experimental results show that the Li precipitates that form on Cu grains that have close to (111) orientations are the smallest and the most uniform in size. Such a morphology is expected to be effective for the suppression of dendrite; growth. Numerical analysis indicates that the initial stage of electrodeposition plays an important role in determining morphological variation, and this is due to the crystal orientation dependence of the adatom concentration at equilibrium.

    DOI: 10.1021/acs.cgd.6b01710

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  37. Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents

    Naoyoshi Komatsu, Takeshi Mitani, Yuichiro Hayashi, Tomohisa Kato, Shunta Harada, Toru Ujihara, Hajime Okumura

    JOURNAL OF CRYSTAL GROWTH   Vol. 458   page: 37 - 43   2017.1

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    For solution growth of 4H-SiC with Si0.6-x-yCr0.4AlxSny solvents, the changes in surface morphology and polytype induced by the addition of Sn and Al to the Si0.6Cr0.4 solvent were investigated. Growth with Si0.6Cr0.4 solvents resulted in a rough surface covered with large macrosteps that were several micrometers high, and the polytype of the grown layer transformed to 6H and 15R-SiC. The surface roughening and polytype instability were suppressed when more than 2 at% Al was added to the SiCr0.4 solvent. We also found that the combined addition of both 2-4 at% Sn and 0.5-1 at% Al resulted in smooth surface morphology. We discussed the modification of the surface morphology of 4H-SiC caused by the additives in terms of the wetting properties of the solvents. Based on the results of experiments and thermodynamic calculations, the addition of both Sn and Al increased the liquid/solid interfacial energy. Because the two-dimensional nucleation energy increases with the interfacial energy, we conclude that smooth step flow growth of 4H-SiC was achieved by lowering the frequency of two-dimensional nucleation on the growth surface.

    DOI: 10.1016/j.jcrysgro.2016.10.045

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  38. Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents

    "N. Komatsu, T. Mitani, Y Hayashi, T Kato, S. Harada, T. Ujihara, H. Okumura"

    J. Cryst. Growth   Vol. 458   page: 37-43   2017

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    DOI: http://dx.doi.org/10.1016/j.jcrysgro.2016.10.045

  39. Crystal Orientation Dependence of Precipitate Structure of Electrodeposited Li Metal on Cu Current Collectors

    "K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara"

    Cryst. Growth Des.   Vol. 17   page: 2379-2385   2017

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    DOI: DOI: 10.1021/acs.cgd.6b01710

  40. Phase transition process in DDAB supported lipid bilayer

    "T. Isogai, S. Nakada, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa"

    J. Cryst. Growth   Vol. 468   page: 88-92   2017

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    DOI: http://dx.doi.org/10.1016/j.jcrysgro.2016.09.063

  41. Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during sic solution growth

    T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara

    Materials Science Forum   Vol. 897   page: 28 - 31   2017

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    The relationship between surface morphology and spatial distribution of basal plane dislocations in 4H-SiC crystal grown by top-seeded solution growth on the C face was investigated by the differential interference microscopy as well as X-ray topography. Basal plane dislocations were generated at the boundaries of the domains with the different macrosteps advance directions. On the other hand, at the area where macrosteps advance to the same directions, BPDs were hardly observed. This results suggest that BPD density can be decreased by the suppression of the collision of macrosteps during the solution growth on the C face controlling the surface morphology.

    DOI: 10.4028/www.scientific.net/MSF.897.28

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  42. Sic solution growth on si face with extremely low density of threading screw dislocations for suppression of polytype transformation

    K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara

    Materials Science Forum   Vol. 897   page: 24 - 27   2017

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    In order to achieve a high-quality SiC crystal in solution growth, one of the most difficult issues is to grow a thick layer on Si face avoiding polytype transformation. In this case, two-dimensional nucleation, which leads to the polytype transformation, is frequently induced because a density of threading screw dislocations acting as a source of spiral step decreases and wide terraces form by step bunching as growth proceeds. Therefore, it is very difficult to stabilize the polytype of crystals grown with extremely low density of threading screw dislocations. In this study, we tried to overcome these problems by using specially designed seed crystal and optimizing growth temperature and temperature distribution. We successfully grew thick low-threading-dislocation density SiC crystal without polytype transformation under the condition of high growth temperature and homogeneous temperature distribution.

    DOI: 10.4028/www.scientific.net/MSF.897.24

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  43. Solvent design for high-purity SiC solution growth

    Shunta Harada, Goki Hatasa, Kenta Murayama, Tomohisa Kato, Miho Tagawa, Toru Ujihara

    Materials Science Forum   Vol. 897   page: 32 - 35   2017

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    In order to design a solvent for high-purity SiC solution growth, the impurity incorporation and the carbon solubility of various solvent materials have been investigated. Among the transition metal elements, the impurity elements of Cr, Ti, V and Hf are more readily incorporate during the solution growth than the other transition metal elements. The thermodynamic calculation revealed that the Y-Si solvent has relatively large carbon solubility, which is comparable to the Cr-Si and Ti-Si solvents often used in the solution growth of bulk SiC crystals. From these results, the Y-Si solvent is expected to be a suitable solvent for the high-purity SiC solution growth. Furthermore, we have demonstrated that the Y-Si solvent can achieve lower incorporation of metal impurity in the grown crystal than the Cr-Si solvent maintaining the growth rate.

    DOI: 10.4028/www.scientific.net/MSF.897.32

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  44. Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaClO3 Unsaturated Mother Solution

    "H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, T. Ujihara, T. Omatsu, Y. Mori"

    Cryst. Growth Des.     2016.12

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    DOI: doi:10.1021/acs.cgd.6b01657

  45. Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaClO3 Unsaturated Mother Solution

    H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, T. Ujihara, T. Omatsu, Y. Mori

    Cryst. Growth Des.     2016.12

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    DOI: 10.1021/acs.cgd.6b01657

  46. Analysis of the carbon transport near the growth interface with respect to the rotational speed of the seed crystal during top-seeded solution growth of SiC

    Tomonori Umezaki, Daiki Koike, Shunta Harada, Toru Ujihara

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 12 ) page: 125601   2016.12

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    One of the most important issues of SiC solution growth is to increase the growth rate. In our previous study, we reported that increasing the rotational speed of the seed crystal is effective for improving the growth rate in top-seeded solution growth. In the present study, we investigated the origin of the growth rate improvement through a continuous fluid dynamics simulation with a full-scale three-dimensional model of the experimental setup for actual growth experiment. The numerical results indicated that the stagnant layer above the growth interface decreased in thickness and the carbon concentration gradient then became steep with an increase in the rotational speed of the seed crystal. The experimental growth rate was proportional to the calculated carbon concentration gradient, which indicates that the carbon diffusion through the stagnant layer is the rate-determining process. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.125601

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  47. Conversion Behavior of Threading Screw Dislocations on C Face with Different Surface Morphology During 4H-SiC Solution Growth

    Xiao Shiyu, Harada Shunta, Murayama Kenta, Tagawa Miho, Ujihara Toru

    CRYSTAL GROWTH & DESIGN   Vol. 16 ( 11 ) page: 6436 - 6439   2016.11

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    Publishing type:Research paper (scientific journal)   Publisher:Crystal Growth and Design  

    DOI: 10.1021/acs.cgd.6b01107

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  48. Conversion behavior of threading screw dislocations on C face with different surface morphology during 4H-SiC solution growth

    "S. Xiao, S. Harada, K. Murayama, M. Tagawa, T. Ujihara"

    Cryst. Growth Des.     page: 6436–6439   2016.10

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    DOI: doi:10.1021 / acs.cgd.6b01107

  49. Conversion behavior of threading screw dislocations on C face with different surface morphology during 4H-SiC solution growth

    S. Xiao, S. Harada, K. Murayama, M. Tagawa, T. Ujihara

    Cryst. Growth Des.     page: 6436–6439   2016.10

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  50. Characterization of V-Shaped Defects Formed during the 4H-SiC Solution Growth by Transmission Electron Microscopy and X-ray Topography Analysis

    Xiao Shiyu, Harada Shunta, Murayama Kenta, Ujihara Toni

    CRYSTAL GROWTH & DESIGN   Vol. 16 ( 9 ) page: 5136 - 5140   2016.9

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    Publishing type:Research paper (scientific journal)   Publisher:Crystal Growth and Design  

    DOI: 10.1021/acs.cgd.6b00711

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  51. Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis

    "S. Xiao, S. Harada, K. Murayama, T. Ujihara"

    Cryst. Growth Des.   Vol. 16 ( 9 ) page: 5136-5140   2016.7

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  52. Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO 3 solution containing Ag nanoparticles

    "H. Niinomi, T. Sugiyama, M. Tagawa, K. Murayama, S. Harada, T. Ujihara"

    CrystEngComm   Vol. 18 ( 39 ) page: 7441-7448   2016.7

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    DOI: doi: 10.1039/c6ce01464j

  53. Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis

    S. Xiao, S. Harada, K. Murayama, T. Ujihara

    Cryst. Growth Des.   Vol. 16 ( 9 ) page: 5136-5140   2016.7

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  54. Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO 3 solution containing Ag nanoparticles

    H. Niinomi, T. Sugiyama, M. Tagawa, K. Murayama, S. Harada, T. Ujihara

    CrystEngComm   Vol. 18 ( 39 ) page: 7441-7448   2016.7

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  55. Spatial Distribution of Carrier Concentration in 4H-SiC Crystal Grown by Solution Method Reviewed

    Zhen Jiang Wang, Takahiko Kawaguchi, Kenta Murayama, Kenta Aoyagi, S. Harada, Miho Tagawa, Takenobu Sakai, Tomohisa Kato, Toru Ujihara

    Materials Science Forum   Vol. 858   page: 57-60   2016.5

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    DOI: doi:10.4028/www.scientific.net/MSF.858.57

  56. High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent Reviewed

    Shota Watanabe, Masashi Nagaya, Yukihisa Takeuchi, Kenta Aoyagi, S. Harada, Miho Tagawa, Toru Ujihara

    Materials Science Forum   Vol. 858   page: 1210-1213   2016.5

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    DOI: doi:10.4028/www.scientific.net/MSF.858.1210

  57. Effect of magnesium ion concentration on two-dimensional structure of DNA-functionalized nanoparticles on supported lipid bilayer Reviewed

    Takumi Isogai, Eri Akada, Sakiko Nakada, Naoya Yoshida, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 3 ) page: 03DF11   2016.3

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    The effect of divalent cations on lipid-bilayer-assisted DNA-functionalized nanoparticle (DNA-NP) assembly has been studied. We previously reported the lateral diffusion of DNA-NPs on planar lipid bilayer patches, owing to the mobility of lipid molecules in a supported lipid bilayer (SLB), and the resultant two-dimensional (2D) assembly of DNA-NPs. We here report the structural change of the assembled 2D DNA-NP lattices by magnesium ion concentration control on a successfully formed uniform SLB. In the magnesium-free buffer solution, DNA-NPs on SLB loosely assembled into quasi-hexagonal ordered lattices. In buffer solution containing 1mM magnesium acetate, the interparticle distance of DNA-NPs decreased and the lattice structure became disordered. In buffer solution containing 5mM magnesium acetate, the structure of DNA-NP arrays changed markedly and square lattices appeared. It is suggested that magnesium ions affected DNA molecules, which linked nanoparticles, and enabled the control of the structure of DNA-NP 2D arrays. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.03DF11

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  58. Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents Reviewed

    Atsushi Horio, Shunta Harada, Daiki Koike, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai, Miho Tagawa, Toru Ujihara

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 1 ) page: 01AC01   2016.1

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    We report on the relationship between grown polytypes and the activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents. From the thermodynamic calculation as well as crystallization experiments, we revealed that a high activity ratio (a(Si)/a(C)) in the solution leads to the growth of low-hexagonality polytypes, and low a(Si)/a(C) results in the growth of high-hexagonality polytypes. 4H-SiC is stable when a(Si)/a(C) is relatively low (similar to 10(1) > a(Si)/a(C)), 3C-SiC is stable when a(Si)/a(C) is relatively high (similar to 10(4) < a(Si)/a(C)), and 6H-SiC is stable in the intermediate a(Si)/a(C) range (similar to 10(2) < a(Si)/a(C) < similar to 10(3)). From these results, the Cr-Si solvent at high temperatures is expected to be suitable for 4H-SiC growth, and Sc-Si and Fe-Si solvents at relatively low temperatures are expected to be suitable for 3C-SiC growth. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.01AC01

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  59. Thin film growth of CaFe2As2 by molecular beam epitaxy Reviewed

    T. Hatano, T. Kawaguchi, R. Fujimoto, I. Nakamura, Y. Mori, S. Harada, T. Ujihara, H. Ikuta

    SUPERCONDUCTOR SCIENCE & TECHNOLOGY   Vol. 29 ( 1 ) page: 015013   2016.1

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    Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45 degrees-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45 degrees-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

    DOI: 10.1088/0953-2048/29/1/015013

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  60. Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents Reviewed

    A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara

    Japanese Journal of Applied Physics   Vol. 55   page: 01AC01   2016

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    DOI: doi:10.7567/JJAP.55.01AC01

  61. Effect of magnesium ion concentration on two-dimensional structure of DNA-functionalized nanoparticles on supported lipid bilayer Reviewed

    T.Isogai, E. Akada, S. Nakada, N. YOshida, R. Tero,S. Harada, T. Ujihara, M. Tagawa

    Japanese Journal of Applied Physics   Vol. 55   page: 03DF11   2016

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    DOI: doi:10.7567/JJAP.55.03DF11

  62. Two-step SiC solution growth for dislocation reduction

    "K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara"

    J. Cryst. Growth     2016

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    DOI: http://dx.doi.org/10.1016/j.jcrysgro.2016.11.100

  63. Morphology of AlN whiskers grown by reacting N 2 gas and Al vapor

    "M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara"

    J. Cryst. Growth     2016

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    DOI: doi:10.1016/j.jcrysgro.2016.11.127

  64. Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO3 solution containing Ag nanoparticles

    "H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, S. Harada, T. Ujihara"

    CrystEngComm   Vol. 18   page: 7441-7448   2016

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  65. Analysis of the carbon transport near the growth interface with respect to the rotational speed of the seed crystal during top-seeded solution growth of SiC

    "T. Umezaki, D. Koike, S. Harada, T. Ujihara"

    Japanese Journal of Applied Physics   Vol. 55 ( 12 ) page: 125601   2016

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  66. Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO3 solution containing Ag nanoparticles

    H. Niinomi, T. Sugiyama, M. Tagawa, K. Murayama, S. Harada, T. Ujihara

    CRYSTENGCOMM   Vol. 18 ( 39 ) page: 7441 - 7448   2016

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    We demonstrate that a statistically-significant chiral bias in NaClO3 chiral crystallization can be provoked by inducing nucleation via the optical trapping of Ag nano-aggregates using a continuous wave visible circularly polarized laser (lambda = 532 nm). The laser was focused at the interface between air and an unsaturated NaClO3 aqueous solution containing Ag nanoparticles. The "dominant" enantiomorph was switchable by changing the handedness of the incident circularly polarized laser, indicating that the chiral bias is enantio-selective. Moreover, it has been found that the resulting crystal enantiomeric excess (CEE) reached approximately 25%. The CEE is much higher than the typical enantiomeric excess (EE) in the asymmetric photosynthesis of organic compounds ranging from 0.5 to 2%. The efficient induction of the nucleation and the large chiral bias imply the contribution of localized surface plasmon resonance of the Ag nanoaggregates to chiral nucleation. Our method has potential to offer the benefit for studies on the spatiotemporal nucleation control, optical resolution of chiral compounds and biohomochirality.

    DOI: 10.1039/c6ce01464j

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  67. High-speed solution growth of single crystal AlN from Cr-Co-Al solvent Reviewed

    Shota Watanabe, Masashi Nagaya, Yukihisa Takeuchi, Kenta Aoyagi, Shunta Harada, Miho Tagawa, Toru Ujihara

    Materials Science Forum   Vol. 858   page: 1210 - 1213   2016

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    We achieved high-speed solution growth of AlN single crystal from Cr-Co-Al solvent, which was designed on the basis of thermodynamic calculation. To avoid the unintentional precipitations at the interface between solution and gas as well as to increase the growth rate, we designed the solution growth condition, in which the solution near the interface is undersaturated and the solution near the growth position is supersaturated. To realize this kind of ideal condition, we selected Co and Cr as solvent materials due to their high affinity with nitrogen or aluminum. Finally, we achieved a growth rate as high as 200 μm/h in maximum.

    DOI: 10.4028/www.scientific.net/MSF.858.1210

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  68. Spatial distribution of carrier concentration in 4H-SiC crystal grown by solution method Reviewed

    Zhen Jiang Wang, Takahiko Kawaguchi, Kenta Murayama, Kenta Aoyagi, Shunta Harada, Miho Tagawa, Takenobu Sakai, Tomohisa Kato, Toru Ujihara

    Materials Science Forum   Vol. 858   page: 57 - 60   2016

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    We investigated the spatial distribution of carrier concentration in n-type 4H-SiC grown by the solution method using the peak frequency of the longitudinal optical phonon-plasmon coupled (LOPC) mode of the Raman spectra on the surface. The carrier concentration at the position of the smooth terrace was higher than the carrier concentration at the position where the macrosteps were formed. This indicates the nitrogen incorporation efficiently occurs on the smooth surface where the density of macrosteps is relatively low. The different incorporation of nitrogen depending on the surface morphology can be understood from the view point of the adsorption time of impurity on the terrace. The present result implies that the uniform surface morphology is necessary to achieve uniform doping concentration in SiC crystal.

    DOI: 10.4028/www.scientific.net/MSF.858.57

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  69. Proposal of visible-light photoemmision spectroscopy for the evaluation of conduction band in semiconductors

    Ujihara Toru, Ichihashi Fumiaki, Dong Xinyu, Inoue Akito, Kawaguchi Takahiko, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho

    Abstract of annual meeting of the Surface Science of Japan   Vol. 36 ( 0 )   2016

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    Publishing type:Research paper (scientific journal)   Publisher:The Surface Science Society of Japan  

    DOI: 10.14886/sssj2008.36.0_338

    CiNii Article

  70. Measurement of energy distribution of conduction electrons in superlattice by visible-light photoemission spectroscopy

    Ichihashi F.

    2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015     2015.12

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    Publishing type:Research paper (scientific journal)   Publisher:2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015  

    DOI: 10.1109/PVSC.2015.7356192

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  71. Non-uniform electrodeposition of zinc on the (0001) plane

    Mitsuhashi Takato, Ito Yasumasa, Takeuchi Yukihisa, Harada Shunta, Ujihara Toru

    THIN SOLID FILMS   Vol. 590   page: 207 - 213   2015.9

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    Publishing type:Research paper (scientific journal)   Publisher:Thin Solid Films  

    DOI: 10.1016/j.tsf.2015.07.068

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  72. Effect of aluminum addition on the surface step morphology of 4H-SiC grown from Si-Cr-C solution

    Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Shunta Harada, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura

    JOURNAL OF CRYSTAL GROWTH   Vol. 423   page: 45 - 49   2015.8

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    For the solution growth of 4H-SiC with Si1-xCrx solvents, the change in surface step structure by 4 at% Al addition to the solvent was investigated. Without Al addition, step bunching resulted in the formation of giant macrosteps with height greater than several micrometers, and trench-like surface defects formed with solvent inclusion. The edge of the giant macrosteps composing trench-like defects was faceted into low-index facet planes, (1 (1) over bar 0m) (m=1-4). The formation of the trench-like surface defects is considered to originate from the self-pinning of macrosteps owing to the step-faceting phenomenon, which facilitates further development of macrosteps. On the other hand, the addition of Al to the solvents significantly improved the surface roughening, and suppressed the formation of the trench-like surface defects. In this case, smaller bunched steps with heights from several nanometers to about 10 nm formed on the terraces of the macrosteps, while regularly arranged trains of unit-cell-size steps formed on the terrace of macrosteps in growth without Al addition. The decrease in step stiffness might be a possible cause for the formation of the smaller bunched steps on the terrace in growth with Al addition. (C) 2015 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2015.04.032

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  73. "Effect of aluminum addition on the surface step morphology of 4H-SiC grown from Si-Cr-C solution" Reviewed

    Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Shunta Harada, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura

    Journal of Crystal Growth   Vol. 423   page: 45–49   2015.8

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    DOI: doi:10.1016/j.jcrysgro.2015.04.032

  74. Non-uniform electrodeposition of zinc on the (0001) plane Reviewed

    T. Mitsuhashi, Y. Ito, Y. Takeuchi, S. Harada,T. Ujihara

    Thin Solid Films   Vol. 590   page: 207-213   2015.6

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  75. Non-uniform electrodeposition of zinc on the (0001) plane Reviewed

    T. Mitsuhashi, Y. Ito, Y. Takeuchi, S. Harada, T. Ujihara

    Thin Solid Films   Vol. 590   page: 207-213   2015.6

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  76. 3C-SiC crystal on sapphire by solution growth method Reviewed

    Kenji Shibata, Shunta Harada, Toru Ujihara

    Materials Science Forum   Vol. 821-823   page: 185 - 188   2015

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    We realized the growth of 3C-SiC crystal on sapphire by solution growth method. The carbon deposition on a sapphire substrate before growth is the key point for this technology. This carbon layer plays a role to protect the dissolution of sapphire by Si solvent. 3C-SiC was grown on the whole surface of the sapphire substrate and some of the film was 3C-SiC single crystal. Surprisingly, the 3C-SiC layer did not directly grown on the sapphire substrate. The single crystal 3C-SiC layer formed by the reaction between the deposited carbon and the Si wafer that is a solvent material below the melting point of silicon during heating process before the growth. The 3C-SiC grew on Sapphire substrate. In this process, the deposited carbon play another important role.

    DOI: 10.4028/www.scientific.net/MSF.821-823.185

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  77. Dislocation conversion during sic solution growth for high-quality crystals Reviewed

    Shunta Harada, Yuji Yamamoto, Shi Yu Xiao, Daiki Koike, Takuya Mutoh, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai, Miho Tagawa, Toru Ujihara

    Materials Science Forum   Vol. 821-823   page: 3 - 8   2015

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    Solution growth of SiC has attracted significant attention due to its potential for the production of high-quality SiC wafers. We have recently investigated the dislocation propagation behavior during SiC solution growth with the aim of reducing the dislocation density. Threading dislocations were found to be converted to defects on the basal planes during solution growth. Utilizing this dislocation conversion phenomenon, we have proposed a dislocation reduction process during solution growth and achieved high-quality 4H-SiC crystal growth. Here we confirm the potential of SiC solution growth for the production of high-quality SiC wafers.

    DOI: 10.4028/www.scientific.net/MSF.821-823.3

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  78. Control of interface shape by non-axisymmetric solution convection in top-seeded solution growth of SiC crystal Reviewed

    Daiki Koike, Tomonori Umezaki, Kenta Murayama, Kenta Aoyagi, Shunta Harada, Miho Tagawa, Takenobu Sakai, Toru Ujihara

    Materials Science Forum   Vol. 821-823   page: 18 - 21   2015

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    We achieved the convex growth interface shape in top-seeded solution growth of SiC applying non-axisymmetric solution convection induced by non-axisymmetric temperature distribution. The detailed solution flow, temperature distribution and carbon concentration distribution were calculated by 3-dimensional numerical analysis. In the present case, the solution flow below the crystal was unidirectional and the supersaturation was increased along the solution flow direction. By the rotation of the crystal in the unidirectional flow and the temperature distribution, we successfully obtained the crystal with the convex growth interface shape.

    DOI: 10.4028/www.scientific.net/MSF.821-823.18

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  79. Improvement of surface morphology by solution flow control in solution growth of SiC on off-axis seeds Reviewed

    Tomonori Umezaki, Daiki Koike, Shunta Harada, Toru Ujihara

    Materials Science Forum   Vol. 821-823   page: 31 - 34   2015

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    The solution growth of SiC on an off-axis seed is effective on the reduction of threading dislocations. We proposed a novel method to grow a SiC crystal on an off-axis seed by top-seeded solution growth (TSSG). In our previous study, a unidirectional solution flow above a seed crystal is effective to suppress surface roughness in the growth on the off-axis seed. However, it is difficult to apply the unidirectional flow in an axisymmetric TSSG set-up. In this study, the unidirectional flow could be achieved by shifting the rotational axis away from the center of the seed crystal. As a result, the smooth surface was obtained in the wider area where the solution flow direction was opposite to the step-flow direction.

    DOI: 10.4028/www.scientific.net/MSF.821-823.31

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  80. Research on solvent composition for different surface morphology on C face during 4H-SiC solution growth Reviewed

    Shi Yu Xiao, Natsumi Hara, Shunta Harada, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai, Toru Ujihara

    Materials Science Forum   Vol. 821-823   page: 39 - 42   2015

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    Surface morphology of the SiC crystal grown on the C face of the 4H-SiC seed crystal by TSSG method using pure Si, Si-1at%Ti-C, Si-5at%Ti-C and Si-20at%Ti-C solvents was investigated. The surface morphology of the crystal grown from pure Si solvent was smooth. By the addition of Ti to the solvent, the surface morphology became rougher. The RMS value is not proportional to the concentration of Ti. The formation of macrosteps with several micrometers was observed when the addition of Ti increased to 5at% indicating the possibility of the threading screw dislocation conversion on the C face of the 4H-SiC crystal.

    DOI: 10.4028/www.scientific.net/MSF.821-823.39

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  81. Thin film growth of CaFe2As2 by molecular beam epitaxy Reviewed

    T. Hatano, T. Kawaguchi, R. Fujimoto, I. Nakamura, Y. Mori, S. Harada, T. Ujihara and H. Ikuta

    Superconductor Science and Technology   Vol. 29   page: 015013   2015

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    DOI: doi:10.1088/0953-2048/29/1/015013

  82. Measurement of Energy Distribution of Conduction Electrons in Superlattice by Visible-Light Photoemission Spectroscopy

    Ichihashi Fumiaki, Nishitani Kenji, Dong Xinyu, Kawaguchi Takahiko, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Tofu

    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)     2015

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  83. Measurement of Energy Distribution of Conduction Electrons in Superlattice by Visible-Light Photoemission Spectroscopy Reviewed

    Fumiaki Ichihashi, Kenji Nishitani, Xinyu Dong, Takahiko Kawaguchi, Makoto Kuwahara, Takahiro Ito, Shunta Harada, Miho Tagawa, Tofu Ujihara

    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)     2015

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    Visible-light photoemission spectroscopy (VPS) is a novel angle-resolved photoemission spectroscopy developed by us for measuring conduction electrons emitted from a surface with negative electron affinity state. In this study, InGaAs/GaAsP quantum well superlattice was analyzed by the VPS method with changing the excitation photon energy. By comparing with comparison of the energy distribution curves obtained by different excitation energy, the first and second conduction mini-band structures were directly clarified.

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  84. Different behavior of threading edge dislocation conversion during the solution growth of 4H-SiC depending on the Burgers vector

    Shunta Harada, Yuji Yamamoto, Kazuaki Seki, Atsushi Horio, Miho Tagawa, Toru Ujihara

    ACTA MATERIALIA   Vol. 81   page: 284 - 290   2014.12

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    Threading edge dislocation (TED) conversion during the solution growth of SiC was investigated by synchrotron X-ray topography. TEDs were converted to basal plane dislocations by lateral growth with the advance of macrosteps on the growth surface during the solution growth. TEDs with the Burgers vector parallel to the step-flow direction were converted to basal plane dislocations with a high probability. On the other hand, the conversion ratio of TEDs whose Burgers vector is not parallel to the step-flow direction was much lower. The variation in elastic energy of the basal plane dislocations after the conversion depending on the Burgers vectors led to the different behavior of TED conversion. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.actamat.2014.08.027

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  85. Electrostatic acceleration of helicon plasma using a cusped magnetic field

    Harada S., Baba T., Uchigashima A., Yokota S., Iwakawa A., Sasoh A., Yamazaki T., Shimizu H.

    APPLIED PHYSICS LETTERS   Vol. 105 ( 19 )   2014.11

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    DOI: 10.1063/1.4900423

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  86. Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers

    Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa

    JOURNAL OF CRYSTAL GROWTH   Vol. 401   page: 494 - 498   2014.9

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    Two-dimensional (2D) form of DNA-functionalized gold nanoparticles (DNA-AuNPs) has been studied. To confine the DNA-AuNPs in 2D space, we utilized the strong affinity between DNA molecules and supported lipid bilayers (SLBs). DNA-AuNPs adsorbed onto cationic SLB consisting of Dimethyl dioctadecyl ammonium bromide (DDAB) on mica substrate with high affinity. Owing to the high mobility of lipid molecules, 2D diffusion and transportation of DNA-AuNPs on the SLB was achieved. Using AFM imaging we confirmed a selective adsorption of DNA-AuNPs onto cationic lipid bilayer patches on mica surface, and then we confirmed a drastic formation change of DNA-AuNPs on the SLB with annealing. We observed that the DNA-AuNPs assembled into a densely packed single layered 2D superstructure through DNA hybridization. (C) 2014 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2014.01.032

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  87. Defect evolution in high-quality 4H-SiC grown by solution method

    Harada S., Tagawa M., Ujihara T.

    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES   Vol. 70   page: C1415 - C1415   2014.8

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  88. Emergence and Amplification of Chirality via Achiral-Chiral Polymorphic Transformation in Sodium Chlorate Solution Growth

    Hiromasa Niinomi, Hitoshi Miura, Yuki Kimura, Makio Uwaha, Hiroyasu Katsuno, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto

    CRYSTAL GROWTH & DESIGN   Vol. 14 ( 7 ) page: 3596 - 3602   2014.7

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    Chiral symmetry breaking during the chiral crystallization from a sodium chlorate (NaClO3) aqueous solution is an intriguing phenomenon because it provides insights into the prebiotic process of biohomochirality. However, a mechanism of the emergence and amplification of chirality remains controversial, especially for crystallization from highly supersaturated solution, and one of the hypotheses proposed before is a transition toward the homochiral state during the early stages of crystallization. In this contribution, we directly examined the early stage of crystallization by in situ polarized-light microscopy. The observation revealed that achiral crystals, which appear prior to the formation of chiral crystals, transform to the chiral crystal through two kinds of polymorphic transformations: (1) martensitic transformation (MT) and (2) solution-mediated phase transition (SMPT). The SMPT is remarkably facilitated by contact with a chiral crystal. Notably, the resulting enantiomorph through contact-facilitated SMPT is strongly directed by the contacting enantiomorph. In contrast, the MT yields two enantiomorphs in equal probability. The emergence and amplification of chirality has generally been considered to be a result of direct nucleation of a chiral crystal and its fragmentation. In contrast, our observations provide a possibility that the MT and contact-facilitated SMPT play a role for the emergence and amplification of chirality, respectively.

    DOI: 10.1021/cg500527t

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  89. Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method Reviewed

    Yuji Yamamoto, Shunta Harada, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Daiki Koike, Miho Tagawa, Toru Ujihara

    APPLIED PHYSICS EXPRESS   Vol. 7 ( 6 ) page: 065501   2014.6

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    We report a marked reduction in the dislocation density of a 4H-SiC crystal using a high-efficiency dislocation conversion phenomenon. During the solution growth, threading dislocations were efficiently converted to basal plane defects by the step flow of macrosteps. Utilizing this dislocation conversion phenomenon, we achieved the marked reduction of threading dislocation density. Consequently, the threading screw dislocation density was only 30 cm(-2), which was two orders of magnitude lower than that of the seed crystal. The 4H-SiC polytype of the seed crystal was replicated in the grown crystal, which was attributed to the spiral growth owing to a few remaining threading screw dislocations upstream of the step flow. (C) 2014 The Japan Society of Applied Physics

    DOI: 10.7567/APEX.7.065501

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  90. Solubility measurement of a metastable achiral crystal of sodium chlorate in solution growth

    Hiromasa Niinomi, Atsushi Horio, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Katsuo Tsukamoto

    JOURNAL OF CRYSTAL GROWTH   Vol. 394   page: 106 - 111   2014.5

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    The solubility of the metastable achiral monoclinic phase in NaClO3 crystallization from an aqueous solution, which appears prior to the nucleation of chiral crystals, was successfully measured in the range from 10 degrees C to 23 degrees C. Antisolvent crystallization method was used to obtain metastable crystals for the measurement. The solubility was determined to be about 1.6 times higher than that of the chiral stable cubic phase by observing growth or dissolution of the crystal in aqueous solution at the temperature and concentration of which is predetermined. (C) 2014 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2014.02.034

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  91. Nitrogen doping of 4H-SiC by the top-seeded solution growth technique using Si-Ti solvent

    Kazuhiko Kusunoki, Kazuhito Kamei, Kazuaki Seki, Shunta Harada, Toru Ujihara

    Journal of Crystal Growth   Vol. 392   page: 60 - 65   2014.4

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    The nitrogen doping behavior of 4H-SiC was investigated by the top-seeded solution growth technique using Si-Ti solvent. Growth experiments were performed under a mixed gas of helium and nitrogen at atmospheric pressure at 1940°C, in which nitrogen content ranged between 0.17 and 0.5 vol%. The electrical property and structural quality of nitrogen-doped crystals were examined. The nitrogen doping level increased with the increase of nitrogen content in the growth furnace. The most heavily nitrogen-doped SiC with a concentration of 1.1×1020 cm-3 was obtained
    however, stacking faults (SFs) were abruptly generated above a nitrogen concentration of 3.0×1019 cm-3. The lowest resistivity of approximately 0.010 Ω cm was obtained with SFs-free. Based on the both undoped and nitrogen-doped growth experimental results, the nitrogen incorporation behavior by employing our solution growth technique was discussed. © 2014 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2014.01.044

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  92. Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC Reviewed

    T. Umezaki, D. Koike, A. Horio, S. Harada, and T. Ujihara

    Materials Science Forum   Vol. 778-780   page: 63-66   2014.1

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    DOI: 10.4028/www.scientific.net/MSF.778-780.63

  93. Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent Reviewed

    S. Harada, Y. Yamamoto, S. Xiao, M. Tagawa, and T. Ujihara

    Materials Science Forum   Vol. 778-780   page: 67-70   2014.1

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    DOI: 10.4028/www.scientific.net/MSF.778-780.67

  94. Different behavior of threading edge dislocation conversion during the solution growth of 4H-SiC depending on the Burgers vector Reviewed

    S. Harada, Y. Yamamoto, K. Seki, A. Horio, M. Tagawa, T. Ujihara

    Acta Materialia   Vol. 81   page: pp. 284-290   2014

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    DOI: DOI: 10.1016/j.actamat.2014.08.027

  95. "Direct measurement of conduction miniband structure in superlattice by visible-light photoemission spectroscopy"

    F. Ichihashi, D. Shimura, K. Nishitani, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, H. Katsuno, M. Tagawa, T.Ujihara

    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th , 8-13 June 2014     page: 2882-2885   2014

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    DOI: DOI:10.1109/PVSC.2014.6925534

  96. Direct Measurement of Conduction Miniband Structure in Superlattice by Visible-Light Photoemission Spectroscopy

    Ichihashi Fumiaki, Shimura Daiki, Nishitani Kenji, Kawaguchi Takahiko, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Katsuno Hiroyasu, Tagawa Miho, Ujihara Tofu

    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)     page: 2882 - 2885   2014

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  97. Direct Measurement of Conduction Miniband Structure in Superlattice by Visible-Light Photoemission Spectroscopy

    Fumiaki Ichihashi, Daiki Shimura, Kenji Nishitani, Takahiko Kawaguchi, Makoto Kuwahara, Takahiro Ito, Shunta Harada, Hiroyasu Katsuno, Miho Tagawa, Tofu Ujihara

    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)     page: 2882 - 2885   2014

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    We have proposed a novel angle-resolved photoemission spectroscopy to measure the conduction electrons emitted from a surface with negative electron affinity state. We call this method visible-light photoemission spectroscopy (VPS). In the present study, the conduction miniband structure formed in a superlattice was evaluated by the VPS method. As a result, we succeeded to obtain the dispersion of the miniband. In addition, the effective mass of the miniband was quantitatively determined from the observed dispersion. Therefore, we believe that VPS is a quite powerful tool for the evaluation of intermediate-band solar cells.

    DOI: 10.1109/PVSC.2014.6925534

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  98. Polytype Control in SiC Crystal Growth : Kinetic Polytype Control in 3C-SiC Solution Growth(<Special Issue>Formation and Crystal Growth of Metastable Phases)

    Seki Kazuaki, Harada Shunta, Ujihara Toru

    Journal of the Japanese Association for Crystal Growth   Vol. 40 ( 4 ) page: 253 - 260   2014

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    Silicon carbide forms polytypes due to different stacking arrangements of Si and C. For the use of semiconductor materials, it is necessary to fabricate a single polytype material. In this paper, firstly, determination factors of polytypes are introduced from both experimental and theoretical viewpoints, and the difficulty of the polytype control based on thermal stability is shown. Next, the actual control techniques in sublimation growth method and CVD method are shown to be based on the concept that the polytype sequence of seed crystal continues to the grown crystal. Finally, we propose the kinetic polytype control method based on the growth speed difference among polytypes in SiC solution growth.

    DOI: 10.19009/jjacg.40.4_253

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  99. Achiral Metastable Crystals of Sodium Chlorate Forming Prior to Chiral Crystals in Solution Growth

    Hiromasa Niinomi, Tomoya Yamazaki, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Takahiro Kuribayashi, Makio Uwaha, Katsuo Tsukamoto

    CRYSTAL GROWTH & DESIGN   Vol. 13 ( 12 ) page: 5188 - 5192   2013.12

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    Chiral symmetry breaking in NaClO3 crystallization from an aqueous solution with perturbations has been of great interest. To understand the mechanism, several models focusing on the early stage of the crystallization have been proposed. However, they are ambiguous because the early stage has been barely explored directly. Here, we investigate the early stages of the crystallization process driven by droplet evaporation using a combination of direct in situ microscopic observations and cryogenic single-crystal XRD experiments. We demonstrate that an achiral crystal having P2(1)/a symmetry, which is newly discovered for a solution growth, first appears in the droplet and then transforms into the chiral crystals. Additionally, determination of the lattice constants by XRD experiments (a = 8.42 angstrom, b = 5.26 angstrom, c = 6.70 angstrom, beta = 109.71 degrees) revealed that the achiral phase should be identical to Phase III (a = 8.78 angstrom, b = 5.17 angstrom, c = 6.83 angstrom, beta = 110 degrees), which is a high-temperature phase from a melt growth of NaClO3. We advocate further assessment of the achiral crystal and a new pathway for the formation of chiral crystals via crystalline phase transition from achiral Phase III.

    DOI: 10.1021/cg401324f

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  100. SiC 結晶成長における多形制御 ~速度論的多形制御法の提案(3C-SiC 溶液成長を例に)~

    関 和明、原田 俊太、宇治原 徹

    日本結晶成長学会誌,   Vol. 40 ( 4 ) page: 253   2013.12

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  101. SiC 結晶成長における多形制御 ~速度論的多形制御法の提案(3C-SiC 溶液成長を例に)~

    関 和明, 原田 俊太, 宇治原 徹

    日本結晶成長学会誌,   Vol. 40 ( 4 ) page: 253   2013.12

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  102. Direct Growth of AlN Single Crystal on Sapphire by Solution Growth Method

    Hiroaki Matsubara, Kohei Mizuno, Yukihisa Takeuchi, Shunta Harada, Yasuo Kitou, Eiichi Okuno, Toru Ujihara

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 ) page: 08JE17   2013.8

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    AlN was directly grown on a sapphire substrate by the solution growth method with the Cu-Si-Al-Ti solvent under a nitrogen gas flow. X-ray diffraction measurements revealed that the grown AlN was single crystal. The AlN layer was epitaxially formed on the sapphire substrate with the orientation relationships: (0001)(AlN) parallel to (0001)(sapphire) and [(1) over bar 100](AlN) parallel to [&lt;(1over bar&gt;120](sapphire). The full widths at half maximum (FWHMs) of X-ray rocking curves for tilt and twist components were 414 and 2031 arcsec, respectively. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.08JE17

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  103. Influence of solution flow on step bunching in solution growth of SiC crystals

    Can Zhu, Shunta Harada, Kazuaki Seki, Huayu Zhang, Hiromasa Niinomi, Miho Tagawa, Toru Ujihara

    Crystal Growth and Design   Vol. 13 ( 8 ) page: 3691 - 3696   2013.8

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    The control of step bunching by solution flow in 4H-SiC solution growth is proposed. We achieved the solution flow control with the specially designed top-seeded solution growth method as follows: by deviating a seed crystal from the center of a crucible and rotating the crucible in one direction, the solution flow direction was controlled to be parallel or antiparallel to the step-flow direction. After the growth, the widely spaced, accumulated macrosteps were observed and the surface of the grown crystal became rough under the parallel flow. On the other hand, the development of the macrosteps was suppressed under the antiparallel flow. As the growth proceeds, the surface roughness of the growth surface increases under the parallel flow, while the surface roughness decreases under the antiparallel flow. This fact suggests the solution flow control can be an effective method to suppress the step bunching during the solution growth of SiC single crystals. © 2013 American Chemical Society.

    DOI: 10.1021/cg400706u

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  104. Evolution of threading screw dislocation conversion during solution growth of 4H-SiC Reviewed

    S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, M. Tagawa, T. Ujihara

    APL Materials   Vol. 1 ( 2 ) page: 022109   2013.8

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    Evolution of threading screw dislocation (TSD) conversion during the solution growth of 4H-SiC on a vicinal crystal of 4H-SiC(0001) was investigated by synchrotron X-ray topography. Selecting appropriate X-ray wavelength and g vector, we can change the penetration of X-ray, and the dislocation behaviors with the different depth were successfully observed. Evidently TSDs parallel to the c-axis having c-component Burgers vector were changed into defects on the (0001) basal planes with the same Burgers vector as the TSDs, propagating to the [11\\documentclass[12pt]{minimal}\\begin{document}$\\bar{2}$\\ end{document}2̄0] step-flow direction by advancing macrosteps during the solution growth. The TSD conversions stochastically took place during the growth. The conversion rate was almost uniform and finally almost all TSDs were converted to the basal plane defects. The conversion rate was low at the very early stage of the growth, which implies that the macrosteps were not formed at the initial stage of the solution growth. © 2013 Author(s).

    DOI: 10.1063/1.4818357

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  105. Solution growth of an ultra-high quality SiC crystal

    UJIHARA Toru, HAKADA Shunta, YAMAMOTO Yuji, SEKI Kazuaki

    Oyo Buturi   Vol. 82 ( 4 ) page: 326 - 329   2013.4

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    <p>The improvement of the substrate quality is important to apply SiC materials to high-performance power devices. A solution growth method is attracting attention as the technique for "ultra-high quality" crystal growth. In our research, it has been revealed that threading dislocations are converted to other defects in the basal planes and they are swept from the crystal during the growth process. Utilizing this conversion phenomenon, we have demonstrated ultra-high quality growth. Recently, reports of improvements in the crystal growth rate and the expansion of the crystal size have also been made using other groups. We have almost established the solution growth as a full-scale quality SiC bulk crystal growth technology.</p>

    DOI: 10.11470/oubutsu.82.4_326

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  106. 超高品質SiC溶液成長 Invited Reviewed

    宇治原 徹、原田 俊太、山本 祐治、関 和明

    応用物理   Vol. 82   page: 326-329   2013.4

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  107. SiC溶液成長の最近の展開

    原田 俊太、山本 祐治、関 和明、宇治原 徹

    日本結晶成長学会誌,   Vol. 40   page: 25   2013.4

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  108. SiC溶液成長の最近の展開

    原田 俊太, 山本 祐治, 関 和明, 宇治原 徹

    日本結晶成長学会誌,   Vol. 40   page: 25   2013.4

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  109. 超高品質SiC溶液成長 Invited Reviewed

    宇治原 徹, 原田 俊太, 山本 祐治, 関 和明

    応用物理   Vol. 82   page: 326-329   2013.4

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  110. Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth Reviewed

    Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara

    Materials Science Forum   Vol. 740-742   page: 15-18   2013.1

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    DOI: 10.4028/www.scientific.net/MSF.740-742.15

  111. Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC Reviewed

    S. Harada, Y. Yamamoto, K. Seki, T. Ujihara

    Materials Science Forum   Vol. 740-742   page: 189-192   2013.1

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    DOI: 10.4028/www.scientific.net/MSF.740-742.189

  112. Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method Reviewed

    K. Seki, S. Harada, T. Ujihara

    Materials Science Forum   Vol. 740-742   page: 311-314   2013.1

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    DOI: 10.4028/www.scientific.net/MSF.740-742.311

  113. Electron Spectroscopy of Conduction Electrons Excited by Visible Light Utilizing NEA Surface

    Ichihashi Fumiaki, Shimura Daiki, Nishitani Kenji, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Toru

    2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 288 - 291   2013

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    Web of Science

  114. Electron spectroscopy of conduction electrons excited by visible light utilizing NEA surface Reviewed

    Fumiaki Ichihashi, Daiki Shimura, Kenji Nishitani, Makoto Kuwahara, Takahiro Ito, Shunta Harada, Miho Tagawa, Toru Ujihara

    Conference Record of the IEEE Photovoltaic Specialists Conference     page: 288 - 291   2013

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:Institute of Electrical and Electronics Engineers Inc.  

    In this paper we propose an angle-resolved photoemission spectroscopy to observe the conduction electrons emitted from a surface of negative electron affinity state. In actual, we have measured conduction electrons in a GaAs bulk crystal and obtained the electron dispersion around Γ point. In addition, we could also observe hot electrons excited by the light which energy was much larger than band gap energy. These results suggest that the method we proposed is one of the most powerful tools for the evaluation method of the conduction band. © 2013 IEEE.

    DOI: 10.1109/PVSC.2013.6744149

    Scopus

  115. Current Advances in SiC Solution Growth(<Special Issue>)Opening Up a New World of Crystal Growth on SiC)

    Harada Shunta, Yamamoto Yuji, Seki Kazuaki, Ujihara Toru

    Journal of the Japanese Association for Crystal Growth   Vol. 40 ( 1 ) page: 25 - 32   2013

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    Publishing type:Research paper (scientific journal)   Publisher:The Japanese Association for Crystal Growth  

    Solution growth has a potential to achieve high quality bulk SiC growth. In this paper we review current advances in SiC solution growth specially focusing on the crystal quality. During the solution growth, threading dislocations tend to be converted to basal plane defects by the step-flow of macrosteps. This phenomenon implies that all dislocations can be excluded from the lateral face of the crystal in principle. Actually, high quality SiC crystal with very low threading dislocation density was obtained applying the dislocation conversion during the solution growth.

    DOI: 10.19009/jjacg.40.1_25

    CiNii Article

  116. Ultrahigh-resolution direct observation of mini-bands formed in InGaAs/AlGaAs superlattice

    Shimura D.

    Conference Record of the IEEE Photovoltaic Specialists Conference     page: 306 - 310   2013

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    Publishing type:Research paper (scientific journal)   Publisher:Conference Record of the IEEE Photovoltaic Specialists Conference  

    DOI: 10.1109/PVSC.2013.6744154

    Scopus

  117. Ultrahigh-resolution direct observation of mini-bands formed in InGaAs/AlGaAs superlattice Reviewed

    Daiki Shimura, Fumiaki Ichihashi, Kenji Nishitani, Shunta Harada, Makoto Kuwahara, Takahiro Ito, Masaharu Matsunami, Shin-ichi Kimura, Takenobu Sakai, Miho Tagawa, Toru Ujihara

    2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 306 - 310   2013

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    Mini-bands formed in superlattice structures are often used for an intermediate-band solar cell. In order to design an optimized structure, it is important to measure the mini-band dispersions which influence transport properties and solar-energy conversion efficiency. In this study, we directly observed the dispersions of mini-bands formed in InGaAs/AlGaAs quantum-well superlattices by angle-resolved photoemission spectroscopy with synchrotron radiation light. The short-period energy dispersions due to the mini-bands around the X-valley were clearly obtained. In addition, the effective mass coefficient of each mini-band could be individually evaluated.

    Web of Science

  118. Ultrahigh-resolution direct observation of mini-bands formed in InGaAs/AlGaAs superlattice

    Shimura Daiki, Ichihashi Fumiaki, Nishitani Kenji, Harada Shunta, Kuwahara Makoto, Ito Takahiro, Matsunami Masaharu, Kimura Shin-ichi, Sakai Takenobu, Tagawa Miho, Ujihara Toru

    2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page: 306 - 310   2013

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    Web of Science

  119. Polytype-selective growth of SiC by supersaturation control in solution growth

    Kazuaki Seki, Alexander, Shigeta Kozawa, Shunta Harada, Toru Ujihara, Yoshikazu Takeda

    JOURNAL OF CRYSTAL GROWTH   Vol. 360 ( 1 ) page: 176 - 180   2012.12

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:ELSEVIER SCIENCE BV  

    We realized the polytype-selective growth of 3C-SiC and 6H-SiC on a 6H-SiC (0 0 0 1) seed crystal by controlling the supersaturation. Both 6H-SiC and 3C-SiC grew on the 6H-SiC seed crystal at low supersaturation, but 3C-SiC increased with increasing supersaturation. At high supersaturation, 3C-SiC grew so rapidly that it completely covered the 6H-SiC seed crystal. The growth rates of 3C-SiC and 6H-SiC have different dependences on supersaturation. In the present case, the growth rate of 3C-SiC in 2D nucleation mode is compared with that of 6H-SiC in spiral growth mode. The present kinetic polytype-control technique is based on polytypes having different growth rates and it differs considerably from the conventional technique that is based on "inheritance" of stacking sequence, which is well known as "step-controlled epitaxy". (C) 2011 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2011.11.041

    Web of Science

    Scopus

  120. High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth

    Yamamoto Yuji, Harada Shunta, Seki Kazuaki, HORIO Atsushi, MITSUHASHI Takato, UJIHARA Toru

    Applied physics express   Vol. 5 ( 11 ) page: "115501 - 1"-"115501-3"   2012.11

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    CiNii Article

  121. High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth Reviewed

    Yuji Yamamoto, Shunta Harada, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Toru Ujihara

    APPLIED PHYSICS EXPRESS   Vol. 5 ( 11 ) page: 115501   2012.11

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    The high-efficiency conversion of threading screw dislocations (TSDs) in 4H-SiC by solution growth provides an efficient method of obtaining ultra high-quality SiC crystals. The behavior of TSDs on on-axis and off-axis 4H-SiC{0001} seed crystals was investigated by synchrotron X-ray topography. Almost all TSDs in the off-axis Si-face seed crystal were converted to Frank-type stacking faults on the basal planes. The conversion ratio of TSDs was highly influenced by the surface polarity of the seed crystal. The stacking faults laterally propagate toward the outside of the crystal. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.5.115501

    Web of Science

    Scopus

  122. Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth Reviewed

    Shunta Harada, Alexander, Kazuaki Seki, Yuji Yamamoto, Can Zhu, Yuta Yamamoto, Shigeo Arai, Jun Yamasaki, Nobuo Tanaka, Toru Ujihara

    CRYSTAL GROWTH & DESIGN   Vol. 12 ( 6 ) page: 3209 - 3214   2012.6

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    Polytype transformations on the 4H-SiC(0001) Si face during top-seeded solution growth have been investigated by transmission electron microscopy and micro-Raman spectroscopy. 4H-, 15R-, and 6H-SiC were grown on the 4H-SiC(0001) Si face via spiral growth. Once a polytype transformation from 4H-SiC to 15R- or 6H-SiC occurs, the polytype rarely returns to 4H-SiC. Just before the polytype transformation, a disturbance in the stacking sequence involving the introduction of stacking faults was observed. A polytype transformation during spiral growth can be understood in terms of the replication of stacking faults due to two-dimensional nucleation of a single bilayer on the spiral steps. This polytype transformation model shows good agreement with observed polytype transformation pathways as well as the disturbance in the stacking sequence at the interface between 4H-SiC and 15R-SiC.

    DOI: 10.1021/cg300360h

    Web of Science

    Scopus

  123. Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth

    T. Ujihara, S. Kozawa, K. Seki, Alexander, Y. Yamamoto, S. Harada

    Materials Science Forum   Vol. 717-720   page: 351-354   2012.5

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  124. Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth Reviewed

    Y. Yamamoto, K. Seki, S. Kozawa, Alexander, S. Harada, T. Ujihara

    Materials Science Forum   Vol. 717-720   page: 53-56   2012.5

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  125. Anisotropy of Lattice Thermal Conduction in TiO2-x with High Density of Planar Defects by Atomistic Simulations

    Y. Miyauchi, M. Tada, M. Yoshiya, S. Harada, K. Tanaka, H. Yasuda, H. Inui

    AMTC Letters   Vol. 3   page: 242-243   2012.5

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  126. Anisotropy of Lattice Thermal Conduction in TiO2-x with High Density of Planar Defects by Atomistic Simulations

    Y. Miyauchi, M. Tada, M. Yoshiya, S. Harada, K. Tanaka, H. Yasuda, H. Inui

    AMTC Letters   Vol. 3   page: 242-243   2012.5

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  127. CT-2-2 Solution Growth of High-Quality SiC Crystal

    Ujihara Toru, Harada Shunta, Seki Kazuaki, Yamamoto Yuji

    Proceedings of the IEICE General Conference   Vol. 2012 ( 2 ) page: "SS - 19"-"SS-21"   2012.3

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  128. Direct Observation of Vacancies and Local Thermal Vibration in Thermoelectric Rhenium Silicide Reviewed

    Shunta Harada, Katsushi Tanaka, Kyosuke Kishida, Norihiko L. Okamoto, Noriaki Endo, Eiji Okunishi, Haruyuki Inui

    APPLIED PHYSICS EXPRESS   Vol. 5 ( 3 ) page: 035203   2012.3

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    The crystal structure of rhenium silicide with an anomalous ordered arrangement of vacancies has been investigated by utilizing spherical-aberration (C-s)-corrected scanning transmission electron microscopy (STEM). Using C-s-corrected STEM imaging, we directly observe for the first time ordered silicon vacancies in thermoelectric rhenium silicide accompanied by anomalously large local thermal vibration ("rattling" motion) of silicon atoms in their adjacent sites. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.5.035203

    Web of Science

  129. Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth

    Toru Ujihara, Shigeta Kozawa, Kazuaki Seki, Alexander, Yuji Yamamoto, Shunta Harada

    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2   Vol. 717-720   page: 351 - +   2012

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    Publishing type:Research paper (international conference proceedings)   Publisher:TRANS TECH PUBLICATIONS LTD  

    Solution growth is considered to be a powerful method for high quality SiC crystals. This work reports that the conversion process from a threading screw dislocation into a few Frank partial dislocations in basal planes was investigated by synchrotron X-ray topography. This process was effectively assisted by step-flow growth on off-oriented (0001) seed crystals. The Frank partials were not extended into the crystal grown toward the [0001] direction perpendicular to the basal plane. Thus, the conclusion of this study suggests the use of off-orientcd seed crystal is important to improve crystal quality.

    DOI: 10.4028/www.scientific.net/MSF.717-720.351

    Web of Science

    Scopus

  130. Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth Reviewed

    Yuji Yamamoto, Kazuaki Seki, Shigeta Kozawa, Alexander, Shunta Harada, Toru Ujihara

    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2   Vol. 717-720   page: 53 - 56   2012

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    We introduce a method to grow 4H-SiC single polytype stably by controlling the surface morphology. The polytype transition on on-axis 4H-SiC C-face was investigated from a viewpoint of surface morphology of grown layers. At the area where several hillock-like structures grew adjacently, the polytype transition from 4H-SiC to 6H-SiC or 15R-SiC often occurred. Therefore, we tried a vertical seeded solution growth (VSSG) method to suppress the formation of hillock-like structures. As a result, the hillock-like structure on the grown layer was dramatically reduced. Moreover, the ratio of 4H-SiC polytype to the whole grown surface was increased to be almost 100%.

    DOI: 10.4028/www.scientific.net/MSF.717-720.53

    Web of Science

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  131. Direct observation of an ordered arrangement of vacancies and large local thermal vibration in rhenium silicide by Cs-corrected STEM Reviewed

    Shunta Harada', Katsushi Tanaka, Kyosuke Kishida, Norihiko L. Okamoto', Noriaki Endo, Eiji Okunishi, Haruyuki Inui

    Materials Research Society Symposium Proceedings   Vol. 1295   page: 397 - 402   2011

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    The crystal structure of thermoelectric rhenium silicide with an ordered arrangement of vacancies is investigated by utilizing spherical aberration (Cs) corrected scanning transmission electron microscopy (STEM) combined with synchrotron X-ray diffraction and conventional transmission electron microscopy. By STEM Cs corrected imaging, we can clearly observe Si vacancies in rhenium silicide, which is impossible without Cs correction. In addition, significantly reduced contrast levels are noted in STEM images for particular Si sites near vacancies. From the STEM image simulation, the reduced contrast levels are concluded to be due to anomalously large local thermal vibration of these Si atoms. The crystal structure of rhenium silicide can be successfully refined by the synchrotron X-ray diffraction starting with the deduced structure model from the STEM images and the occurrence of large local thermal vibration can be qualitatively confirmed. Furthermore, we confirm the validity of the refined crystal structure of rhenium silicide by comparing experimental images with simulated image generating with the refined crystal structure parameters. © 2011 Materials Research Society.

    DOI: 10.1557/opl.2011.43

    Scopus

  132. Crystal structure refinement of ReSi1.75 with an ordered arrangement of silicon vacancies Reviewed

    Shunta Harada, Hiroaki Hoshikawa, Kosuke Kuwabara, Katsushi Tanaka, Eiji Okunishi, Haruyuki Inui

    PHILOSOPHICAL MAGAZINE   Vol. 91 ( 23 ) page: 3108 - 3127   2011

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    The crystal structure and microstructure of ReSi1.75 were investigated by synchrotron X-ray diffraction combined with scanning transmission electron microscopy. ReSi1.75 contains an ordered arrangement of vacancies in Si sites in the underlying tetragonal C11(b) lattice of the MoSi2-type and the crystal structure is monoclinic with the space group Cm. Atomic positions of Si atoms near vacancies are considerably displaced from the corresponding positions in the parent C11(b) structure, and they exhibit anomalously large local thermal vibration accompanied by large values of atomic displacement parameter. There are four differently-oriented domains with two of them being related to each other by the 90 degrees rotation about the c-axis of the underlying C11(b) lattice and the other two being their respective twins. The habit planes for domain boundaries observed experimentally are consistent with those predicted with ferroelastic theory.

    DOI: 10.1080/14786435.2011.570278

    Web of Science

  133. Formation mechanism of high-density AlN by the nitridation of molten Al

    Mizuno Kohei, Matubara Hiroaki, Takeuchi Yukihisa, Harada Shunta, Ujihara Toru, Aoki Yuuichi, Kohara Kimio

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   Vol. 2011 ( 0 ) page: 761 - 761   2011

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    Publishing type:Research paper (scientific journal)   Publisher:The Ceramic Society of Japan  

    DOI: 10.14853/pcersj.2011F.0.761.0

    CiNii Article

  134. Atomic-level analyses of thermal conduction in magneli-phase TiO<sub>2-x</sub> containing shear structure

    Yoshiya Masato, Miyauchi Yohei, Tada Masahiro, Harada Shunta, Tanaka Katsushi, Yasuda Hideyuki, Inui Haruyuki

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   Vol. 2011 ( 0 ) page: 759 - 759   2011

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    Publishing type:Research paper (scientific journal)   Publisher:The Ceramic Society of Japan  

    DOI: 10.14853/pcersj.2011F.0.759.0

    CiNii Article

  135. Thermoelectric properties and crystallographic shear structures in titanium oxides of the Magneli phases Reviewed

    Shunta Harada, Katsushi Tanaka, Haruyuki Inui

    JOURNAL OF APPLIED PHYSICS   Vol. 108 ( 8 )   2010.10

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    The thermoelectric properties of Magneli phase titanium oxides TinO2n-1 (n=2,3,...) have been investigated, paying special attention to how the thermoelectric performance can be altered by changing the microstructure. Dense polycrystalline specimens with nominal composition of TiO2-x (x=0.05, 0.10, 0.15, and 0.20) prepared by conventional hot-pressing are all identified to be one of the Magneli phases, in which crystallographic shear planes are regularly introduced according to the oxygen deficiency. Electrical conduction is n-type for all specimens and the carrier concentration increases with the increase in the oxygen deficiency. The values of lattice thermal conductivity, on the other hand, decrease with the increase in the oxygen deficiency, which can be attributed to phonon scattering at the crystallographic shear plane. The largest value of thermoelectric figure of merit Z, 1.6 X 10(-4) K-1 was obtained at 773 K for the hot-pressed specimen of TiO1.90. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3498801]

    DOI: 10.1063/1.3498801

    Web of Science

  136. Reduction in the Thermal Conductivity of Thermoelectric Titanium Oxide by Introduction of Planar Defects

    S. Harada, K. Tanaka, H. Inui

    Material Research Society Symposium Proceedings   Vol. 1218   2010.9

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    DOI: 10.1557/PROC-1218-Z01-04

  137. Soft X-ray photoelectron spectroscopy of heusler-type thermoelectric alloys Fe<inf>2-x-y</inf>lr<inf>y</inf>v<inf>1+x</inf>Al

    Harada S.

    Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy   Vol. 57 ( 4 ) page: 213 - 217   2010.4

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    Publishing type:Research paper (scientific journal)   Publisher:Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy  

    DOI: 10.2497/jjspm.57.213

    Scopus

  138. Thermoelectric properties of ternary and Al-containing quaternary Ru1-xRexSiy chimney-ladder compound Reviewed

    K. Kishida, A. Ishida, T. Koyama, S. Harada, N. L. Okamoto, K. Tanaka, H. Inui

    Acta Materialia   Vol. 57 ( 6 ) page: 2010-2019   2009.4

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  139. Change in the thermoelectric properties with the variation in the defect structure of ReSi1.75 Reviewed

    S. Harada, K. Tanaka, K. Kishida, N. L. Okamoto, H. Inui

    Material Research Society Symposium Proceedings   Vol. 1128   page: 9-14   2009

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  140. Improvement of Grain-Boundary Conductivity of Trivalent Cation-Doped Barium Zirconate Sintered at 1600°C by Co-Doping Scandium and Yttrium

    S. Imashuku, T. Uda, Y. Nose, K. Kishida, S. Harada, H. Inui and Y. Awakura

    Journal of Electrochemical Society   Vol. 155 ( 6 ) page: B581-B586   2008.4

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Presentations 406

  1. 放射光トポグラフィーによるSiC中の基底面転位の深さ評価

    藤榮 文博, Hongyu Peng, Tuerxun Ailihumaer, Balaji Raghothamachar, Michael Dudley, 原田 俊太, 田川 美穂, 宇治原 徹

    2021年第68回応用物理学会学術講演会  2021.3.18 

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

  2. 面欠陥周期配列を含む自然超格子酸化チタンの構造制御と熱輸送特性

    原田 俊太, 小坂 直輝, 杉本 峻也, 八木 貴志, 田川 美穂, 宇治原 徹

    2021年第68回応用物理学会学術講演会  2021.3.16 

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

  3. 面欠陥周期配列を含むCr添加酸化チタン多結晶の熱伝導率の温度依存性

    杉本 峻也, 金 柯怜, 竹内 恒博, 田川 美穂, 宇治原 徹, 原田 俊太

    2021年第68回応用物理学会学術講演会  2021.3.16 

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    Event date: 2021.3.16 - 2021.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

  4. DNAガイドのナノ粒子結晶化:構造制御と結晶対称性を維持した収縮制御 Invited

    田川美穂, 鷲見隼人, 横森真麻,  前田勇士, 太田昇, 関口博史, 原田俊太, 宇治原徹

    日本物理学会第76回年次大会(領域9結晶成長)  2021.3.13 

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    Event date: 2021.3.12 - 2021.3.15

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  5. 顕微ラマン分光法によるGaN結晶中の貫通転位のひずみイメージング Invited

    小久保 信彦,角岡 洋介, 藤榮文博,恩田正一,山田永,清水三聡,原田俊太,田川美穂,宇治原徹

    先進パワー半導体分科会 第7回講演会  2020.12.10 

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    Event date: 2020.12.9 - 2020.12.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  6. Prediction system of CFD simulation in solution growth constructed by machine learning - Application for SiC top-seeded solution growth – Invited International conference

    Toru Ujihara, Yosuke Tsunooka, Tomoki Endo, Can Zhu, Shunta Harada, Miho Tagawa

    17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors (SSLCHINA&IFWS 2020)  2020.11.24 

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    Event date: 2020.11.23 - 2020.11.25

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:China  

  7. 分子線エピタキシーによるBAs薄膜の成長条件の検討

    蔡沛陽, 畑野敬史, 原田俊太, 生田博志, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  8. DNA修飾ナノ粒子コロイド結晶化における結晶性に及ぼす塩濃度の影響

    鷲見隼人, 太田昇, 関口博史, 原田俊太, 宇治原徹, 田川美穂

    第49回結晶成長国内会議(JCCG-49)  2020.11.11 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  9. DNA修飾ナノ粒子超格子のサイズ・結晶性に及ぼす修飾DNA鎖長の影響

    鈴木康平, 太田昂, 関口博史, 鷲見隼人, 横森真麻, 原田俊太, 宇治原徹, 田川美穂

    第49回結晶成長国内会議(JCCG-49)  2020.11.11 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  10. DNA修飾ナノ粒子超格子結晶化における塩濃度が粒子間相互作用に与える影響

    楊冰琦, 鷲見隼人, 太田昇, 関口博史, 原田俊太, 宇治原徹, 田川美穂

    第49回結晶成長国内会議(JCCG-49)  2020.11.11 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  11. CFDによるステップバンチング挙動シミュレーション

    劉欣博, 党一帆, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.11 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  12. Cr添加酸化チタン結晶における面欠陥周期構造の制御

    杉本峻也, 田川美穂, 宇治原徹, 原田俊太

    第49回結晶成長国内会議(JCCG-49)  2020.11.10 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Poster presentation  

  13. 長時間安定SiC溶液成長における経時変化のシミュレーションと最適化

    党一帆, 朱燦, 幾見基希, 郁万成,黄威, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.10 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  14. SiC溶液成長における機械学習を用いた固-液界面形状の時間変化の推定

    高石将輝, 党一帆, 沓掛健太朗, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  15. 放射光トポグラフィー高温その場観察による窒素添加4H-SiC結晶における積層欠陥エネルギーの定量化

    藤榮文博, 原田俊太, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  16. SiC溶液成長における境界層とステップバンチングの関係

    海野高天, 朱燦, 原田俊太, 劉欣博, 幾見基希, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  17. Si-Y溶媒を用いたSiC溶液成長中の自然核生成による多結晶析出の抑制

    幾見基希, 朱燦, 原田俊太, 党一帆, 海野高天, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  18. 溶液法によるBPDフリー3インチSiC結晶の成長

    朱燦, 郁万成, 黄威, 幾見基希, 党一帆, 海野高天, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  19. 機械学習支援による溶液成長法を用いた6インチSiC作製手法の確立

    郁万成, 朱燦, 角岡洋介, 黄威, 党一帆, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  20. 機械学習を用いたSiC溶液法の温度・流速分布の次元削減とロバスト性評価

    磯野優, 小山幸典, 沓掛健太郎, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  21. SiC昇華法におけるベイズ最適化を用いた高品質・高速成長条件の探索

    井上凱喜, 沓掛健太郎, 原田俊太,田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  22. 高温環境下におけるGaN基板中の貫通転位の構造変化の解明

    水野竜太郎, 藤榮文博, 山田永, 原田俊太, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  23. 時間的な温度差により熱エネルギーを電気に変換する熱電池の構築

    陳曄, 石川晃平, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11.9 - 2020.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  24. Automatic Detection of Dislocation contrasts in Birefringence Image of SiC Wafers Using Variance Filter Method International conference

    Akira Kawata, Kenta Murayama, Shogo Sumitani, Shunta Harada

    2020 International Conference on Solid State Devices and Materials (SSDM 2020)  2020.9.29 

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    Event date: 2020.9.27 - 2020.9.30

    Language:English   Presentation type:Oral presentation (general)  

  25. イオン注入シミュレーションに対する機械学習の適用

    蜂谷涼太, 沓掛健太朗, 原田俊太, 田川美穂, 宇治原徹

    第81回応用物理学会秋季学術講演会  2020.9.9 

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    Event date: 2020.9.8 - 2020.9.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  26. 機械学習を活用したSiC溶液成長プロセス・ビュジュアライゼーション

    宇治原徹, 畑佐豪記, 角岡洋介, 村山健太, 原田俊太, 田川美穂

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11.27 - 2017.11.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ホテルコンコルド浜松   Country:Japan  

  27. SiC溶液成長過程における転位伝播方向制御による高品質化

    原田俊太, 村山健太, 村井良多, 朱燦, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11.27 - 2017.11.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ホテルコンコルド浜松   Country:Japan  

  28. 4H-SiC溶液成長法二段階成長における異種多形の析出抑制

    村山健太, 原田俊太, 藤栄文博, 劉欣博, 村井良多, 朱燦, 花田賢志, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11.27 - 2017.11.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ホテルコンコルド浜松   Country:Japan  

  29. SiC溶液成長におけるプロセス・インフォマティクス

    宇治原徹,角岡洋介,畑佐豪記,村山健太,村井良多,朱燦,原田俊太,田川美穂

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11.27 - 2017.11.29

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ホテルコンコルド浜松   Country:Japan  

  30. 気相法AlNウィスカー成長における形状変化メカニズムの解明

    齊藤廣志, 竹内幸久, 原田俊太, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11.27 - 2017.11.29

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ホテルコンコルド浜松   Country:Japan  

  31. 機械学習による結晶成長条件の予測を用いたSiC溶液成長

    林宏益, 村井良多, 朱燦, 村山健太, 角岡洋介, 畑佐豪記, 原田俊太, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11.27 - 2017.11.29

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ホテルコンコルド浜松   Country:Japan  

  32. 機械学習による熱流体解析の高速化における予測精度

    畑佐豪記, 角岡洋介, 村井良多, 村山健太, 朱燦, 原田俊太, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11.27 - 2017.11.29

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ホテルコンコルド浜松   Country:Japan  

  33. 溶液法 SiC 基板を用いて作製した MOS キャパシタの評価

    古庄智明, 川畑直之, 古橋壮之, 渡辺友勝, 渡邊寛, 山川聡, 村山健太, 原田俊太, 宇治原徹

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11.1 - 2017.11.2

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  34. 貫通らせん転位が極めて少ない 4H-SiC の溶液成長における多形安定化手法

    村山健太, 原田俊太, 藤栄文博, 劉欣博, 村井良多, 朱燦, 花田賢志, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11.1 - 2017.11.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  35. 溶液成長における溶液状態の高速予測と 網羅的探索により最適化した条件での結晶成長

    村井良多, 村山健太, 原田俊太, 畑佐豪記, 角岡洋介, 林宏益, 朱燦, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11.1 - 2017.11.2

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  36. SiC 溶液成長法における溶媒中の Cr 組成に対する 成長ポリタイプの面内分布及び相対存在割合の評価

    鈴木皓己, 高橋大, 土本直道, 玄光龍, 太子敏則, 村山健太, 原田俊太, 宇治原徹

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11.1 - 2017.11.2

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  37. ラマン分光法による GaN 単結晶における貫通転位の刃状成分の解析

    小久保信彦, 角岡洋介, 藤榮文博, 大原淳士, 原一都, 恩田正一, 山田永, 清水三聡, 原田俊太, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11.1 - 2017.11.2

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  38. X 線トポグラフィーその場観察による 4H-SiC 積層欠陥挙動の窒素濃度依存性評価

    藤榮文博, 原田俊太, 周防裕政, 加藤智久, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11.1 - 2017.11.2

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  39. Smooth Li Electrodeposition on Single Crystal Cu Current Collectors International conference

    K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara

    The Electrochemical Society (232nd ECS Meeting) 

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    Event date: 2017.10.1 - 2017.10.5

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  40. High-Quality SiC Solution Growth Using Dislocation Conversion on C Face International conference

    S. Xiao, S. Harada, X. Liu, K. Murayama, R. Murai, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) 

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    Event date: 2017.9.17 - 2017.9.22

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  41. Two-Step Sic Solution Growth with Extremely Low-Dislocation-Density 4h-SiC Crystal for Suppression of Polytype Transformation International conference

    K. Murayama, S. Harada, F. Fujie, X. Liu, R. Murai, C. Zhu, K. Hanada, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) 

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    Event date: 2017.9.17 - 2017.9.22

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  42. High-Speed Prediction Model for Supersaturation and Flow Distribution by CFD Simulation and Machine Learning in SiC Solution Growth International conference

    Y. Tsunooka, N. Kokubo, G. Hatasa, S. Harada, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) 

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    Event date: 2017.9.17 - 2017.9.22

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  43. Real-Time Visualization System for Temperature and Fluid Flow Distributions in SiC Solution Growth Using Prediction Model Constructed by Machine Learning International conference

    G. Hatasa, Y. Tsunooka, S. Lee, K. Murayama, R. Murai, S. Harada, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) 

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    Event date: 2017.9.17 - 2017.9.22

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  44. Direct Observation of Stacking Faults Expansion in 4H-SiC at High Temperatures by In Situ X-Ray Topography International conference

    F. Fujie, S. Harada, K. Murayama, K. Hanada, P. Chen, T. Kato, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) 

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    Event date: 2017.9.17 - 2017.9.22

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  45. Evaluation of 2-Inch Wafer by Solution Growth Method Using Synchrotron X-Ray Topography International conference

    K. Seki, K. Kusunoki, Y. Kishida, H. Kaido, K. Moriguchi, M. Kado, H. Daikoku, T. Shirai, M. Akita, A. Seki, H. Saito, S. Harada, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) 

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    Event date: 2017.9.17 - 2017.9.22

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  46. 単結晶Cu集電体を用いた金属Li負極の不均一析出抑制

    石川 晃平, 原田 俊太, 田川 美穂, 宇治原 徹

    日本金属学会 2017年秋期講演会 

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    Event date: 2017.9.6 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  47. SiCにおける積層欠陥拡張・収縮挙動の高温その場観察

    藤榮 文博, 原田 俊太, 花田 賢志, 村山 健太, 田川 美穂, 加藤 智久, 宇治原 徹

    日本金属学会 2017年秋期講演会 

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    Event date: 2017.9.6 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  48. 溶液成長SiC基板上に作製した酸化膜の評価

    古庄 智明, 川畑 直之, 古橋 壮之, 渡辺 友勝, 渡邊 寛, 山川 聡, 村山 健太, 原田 俊太, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  49. Li挿入によるWO3薄膜の熱伝導率の変化

    小林 竜大, 中村 彩乃, 原田 俊太, 田川 美穂, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  50. DNA被覆ナノ粒子によるDDAB脂質二重膜の指組みゲル相形成の促進

    磯貝 卓巳, 鷲見 隼人, 手老 龍吾, 原田 俊太, 宇治原 徹, 田川 美

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5 - 2017.9.8

    Language:Japanese   Presentation type:Poster presentation  

    Venue:福岡国際会議場   Country:Japan  

  51. Investigation of high-temperature annealing process ofsputtered AlN films

    S. Xiao, Y. Liu, R. Suzuki, H. Miyake, K. Hiramatsu, S. Harada,T. Ujihara

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    Event date: 2017.9.5 - 2017.9.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  52. 機械学習を用いたSiC結晶成長実験条件の最適化

    村井 良多, 畑佐 豪記, 角岡 洋介, 林 宏益, 村山 健太, 朱 燦, 原田 俊太, 田川 美穂, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  53. SiC溶液法C面成長における貫通らせん転位の低減

    劉 欣博, 原田 俊太, 村山 健太, 村井 良多, 肖 世玉, 田川 美穂, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  54. 4H-SiC 溶液成長における積層欠陥との相互作用により生じる貫通らせん転位の変換挙動

    加渡 幹尚, 原田 俊太, 関 和明, 大黒 寛典, 楠 一彦, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  55. X線その場観察によりメニスカス高さ制御したSiC溶液成長

    酒井 武信, 秋田 光俊, 加度 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9.5 - 2017.9.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  56. SiC溶液成長における機械学習を用いた閉鎖空間の溶液温度・流速分布の予

    畑佐 豪記, 角岡 洋介, 村山 健太, 村井 良太, 原田 俊太, 田川 美穂, 宇治原 徹

    第40回結晶成長討論会 

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    Event date: 2017.8.30 - 2017.9.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:浜名湖ロイヤルホテル   Country:Japan  

  57. Hydrogen-Induced Thermal Conductivity Change across Metal-Insulator Transition in Amorphous WO3 Film International conference

    A. Nakamura, S. Harada, M. Tagawa, T. Ujihara

    2017 MRS Spring Meeting 

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    Event date: 2017.4.17 - 2017.4.21

    Language:English  

    Country:United States  

  58. 後方反射X線トポグラフィによる4H-SiC積層欠陥拡張挙動のその場観察

    藤榮 文博, 原田 俊太, 村山 健太, 花田 賢志, 陳鵬磊, 加藤 智久, 田川 美穂, 宇治原 徹

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  59. DNA修飾ナノ粒子超格子を前駆体としたウルフ多面体型コロイド結晶の形成

    鷲見 隼人, 磯貝 卓巳, 吉田 直矢, 原田 俊太, 宇治原 徹, 田川 美穂

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Poster presentation  

    Venue:パシフィコ横浜   Country:Japan  

  60. SiC溶液成長における最適条件高速探索手法の提案

    角岡 洋介, 小久保 信彦, 原田 俊太, 田川 美穂,宇治原 徹

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  61. 水素挿入・脱離によるWO3薄膜の熱伝導率制御

    中村 彩乃, 小林 竜太, 原田 俊太, 田川 美穂, 宇治原 徹

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:パシフィコ横浜   Country:Japan  

  62. 酸化タングステンの酸化還元による可逆的熱伝導率制御

    原田 俊太, 弓削 勇輔, 田川 美穂, 宇治原徹

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  63. 4H-SiC中1SSF・PD起因フォトルミネッセンス減衰時間の温度依存性

    片平 真哉, 市川 義人, 原田 俊太, 木本 恒暢, 加藤 正史

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  64. X線透過法により溶液形状制御したSiC溶液成長

    酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3.14 - 2017.3.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  65. 半導体伝導帯構造を明らかにする可視光電子光電子分光法の提案

    宇治原 徹, 市橋 史朗, 董 キン宇, 井上 明人, 川口 昂彦, 桑原 真人, 伊藤 孝寛, 原田 俊太, 田川 美穂

    2016年真空・表面科学合同講演会 第 36 回表面科学学術講演会 第 57 回真空に関する連合講演会 

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    Event date: 2016.11.29 - 2016.12.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  66. 金属 Li 負極における Cu 集電体の結晶方位と析出形状の関係

    石川 晃平, 伊藤 靖仁, 原田 俊太, 田川 美穂, 宇治原 徹

    第57回電池討論会 

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    Event date: 2016.11.29 - 2016.12.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:幕張メッセ国際会議場   Country:Japan  

  67. Optically induced crystallization of NaClO3 metastable phase on plasmonic gold nanostructures immersed in unsaturated mother solution

    H. Niinomi, T. Sugiyama, M. Tagawa, T. Ujihara, Y. Mori, S. Harada, K. Murayama, K. Miyamoto, T. Omatsu

    Institute for Global Prominent Research Kickoff Symposium 

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    Event date: 2016.11.14

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  68. X線透過法による SiC 溶液成長の溶液流れと溶液形状のその場観察

    酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    先進パワー半導体分科会 第3回講演会 

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    Event date: 2016.11.8 - 2016.11.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:つくば国際会議場   Country:Japan  

  69. 窒素添加した 4H-SiC における積層欠陥拡張・収縮挙動の高温その場観察

    藤榮 文博, 原田 俊太, 村山 健太, 花田 賢志, 陳 鵬磊, 田川 美穂, 加藤 智久, 宇治原 徹

    先進パワー半導体分科会 第3回講演会 

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    Event date: 2016.11.8 - 2016.11.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:つくば国際会議場   Country:Japan  

  70. 透過電子顕微鏡による窒素添加 SiC 積層欠陥の高温その場観察

    陳 鵬磊, 原田 俊太, 荒井 重勇, 藤榮 文博, 肖 世玉, 加藤 智久, 田川 美穂, 宇治原 徹

    先進パワー半導体分科会 第3回講演会 

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    Event date: 2016.11.8 - 2016.11.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:つくば国際会議場   Country:Japan  

  71. SiC 溶液成長においてルツボ口径が多結晶析出に及ぼす影響

    岡島 鎮記, 村井 良多, 村山 健太, 原田 俊太, 田川 美穂, 宇治原 徹

    先進パワー半導体分科会 第3回講演会 

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    Event date: 2016.11.8 - 2016.11.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:つくば国際会議場   Country:Japan  

  72. 溶液成長法二段階成長による SiC 結晶内の欠陥密度の低減

    村山 健太, 堀 司紗, 原田 俊太, 田川 美穂, 宇治原 徹

    先進パワー半導体分科会 第3回講演会 

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    Event date: 2016.11.8 - 2016.11.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:つくば国際会議場   Country:Japan  

  73. Crystallization of NaClO3 metastable phase from unsaturated mother solution achieved by excitation of plasmonic Au nanoarray

    H. Niinomi, T. Sugiyama, M. Tagawa, T. Ujihara, Y. Mori, S. Harada, K. Murayama, K. Miyamoto, T. Omatsu

    Optics & Photonics Japan 2016 

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    Event date: 2016.10.30 - 2016.11.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  74. Trial of Process Informatics in SiC Solution Growth International conference

    T. Ujihara, S. Harada, Y. Tsunooka, N. Kokubo, K. Murayama, R. Murai, M. Tagawa

    The 3rd International Conference on Universal Village (UV 2016) 

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    Event date: 2016.10.6 - 2016.10.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  75. Effect of Crystal Orientation of Cu Current Collector on Morphology of Li Electrodeposition International conference

    K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara

    Nucleation and Growth Research Conference (NGRC 2016) 

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    Event date: 2016.9.27 - 2016.9.29

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  76. Formation Mechanism of AlN Whiskers by Reacting N2 Gas and Al Vapor International conference

    M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara

    Nucleation and Growth Research Conference (NGRC 2016) 

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    Event date: 2016.9.27 - 2016.9.29

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  77. Reduction of all types of dislocation in 4H-SiC crystal by two-step solution growth International conference

    K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara

    The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM) 

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    Event date: 2016.9.25 - 2016.9.29

    Language:English   Presentation type:Oral presentation (general)  

    Country:Greece  

  78. In-situ observation during solution growth of SiC by X-ray transmission method International conference

    T. Sakai, M. Kado, H. Daikoku, S. Harada, T. Ujihara

    The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM) 

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    Event date: 2016.9.25 - 2016.9.29

    Language:English   Presentation type:Poster presentation  

    Country:Greece  

  79. Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth International conference

    T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara

    The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM) 

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    Event date: 2016.9.25 - 2016.9.29

    Language:English   Presentation type:Poster presentation  

    Country:Greece  

  80. Solvent design for high-purity SiC solution growth International conference

    S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara

    The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM) 

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    Event date: 2016.9.25 - 2016.9.29

    Language:English   Presentation type:Poster presentation  

    Country:Greece  

  81. AlN 溶液成長における機械学習を用いた溶液流動の高効率予測

    小久保 信彦, 角岡 洋介, 原田 俊太, 田川 美穂, 宇治原 徹

    2016年第78回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ   Country:Japan  

  82. n 型 4H-SiC 中 SSF 起因フォトルミネッセンスの時間分解測定

    加藤 正史, 片平 真哉, 市川 義人, 市村 正也, 原田 俊太

    2016年第82回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ   Country:Japan  

  83. 機械学習を用いた溶液成長における過飽和度分布の予測

    角岡 洋介, 小久保 信彦, 原田 俊太, 田川 美穂, 宇治原 徹

    2016年第81回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ   Country:Japan  

  84. X 線透過法による溶液法 SiC 結晶成長の溶液表面形状の経時変化の観察

    酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    2016年第80回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ   Country:Japan  

  85. X 線透過法による溶液法 SiC 結晶成長のその場観察

    酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    2016年第79回応用物理学会秋季学術講演会 

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    Event date: 2016.9.13 - 2016.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ   Country:Japan  

  86. Controlling two-dimensional structuer of DNA-linked Au nanoparticle lattices on supported lipid bilayer International conference

    T. Isogai, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa

    The 22nd International Conference on DNA Computing and Molecular Programming (DNA22) 

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    Event date: 2016.9.4 - 2016.9.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Germany  

  87. Control of Macrostep Structure for High-Quality SiC Grown by Liquid Phase Epitaxy International conference

    T. Ujihara, C. Zhu, K. Murayama, S. Harada, M.Tagawa

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8.7 - 2016.8.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  88. Crystal orientation dependence of precipitate structure of electrodeposited Li metal on Cu current collectors International conference

    K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8.7 - 2016.8.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  89. Phase transition process in DDAB supported lipid bilayer International conference

    T. Isogai, S. Nakada, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8.7 - 2016.8.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  90. Prediction of solution flow combined with computational fluid dynamics simulation and sparse modeling International conference

    N. Kokubo, Y. Tsunooka, S. Harada, M. Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8.7 - 2016.8.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  91. The realization of high-quality 4H-SiC C-face grown crystals by controlling the macrosteps formation during solution growth International conference

    S. Y. Xiao, S. Harada, P. L. Chen, K. Murayama, T.Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8.7 - 2016.8.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  92. Effect of Crystal Shape on Solution Flow and Surface Morphology in Solution Growth of SiC International conference

    D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S.Harada, M. Tagawa, T. Sakai, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8.7 - 2016.8.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  93. Two-step growth of SiC solution growth for reduction of dislocations International conference

    K. Murayama, T. Hori, S. Harada, S. Xiao, M.Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8.7 - 2016.8.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  94. Threading Screw Dislocation Conversion by Macrosteps during SiC Solution Growth for High-quality Crystals International conference

    S. Harada, K. Murayama, S. Xiao, F. Fujie, T.Sakai, M. Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8.7 - 2016.8.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  95. Morphology of AlN whiskers grown by reacting N2 gas and Al vapor International conference

    M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8.7 - 2016.8.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  96. 塩素酸ナトリウム水溶液中の銀ナノ粒子円偏光光学捕捉により誘起されるキラル結晶化におけるキラリティの偏り

    新家 寛正, 杉山 輝樹, 田川 美穂, 村山 健太, 原田 俊太, 宇治原 徹

    日本地球惑星科学連合2016年大会 

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    Event date: 2016.5.22 - 2016.5.26

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:幕張メッセ   Country:Japan  

  97. Chiral bias on circularly polarized laser-induced chiral crystallization from NaClO3 solution containing plasmonic Ag nanoparticles International conference

    H. Niinomi, T. Sugiyama, M. Tagawa, K. Murayama, S. Harada, K. Miyamoto, T. Omatsu, T. Ujihara

    Optical manipulation and its satellite topics (OMC'16) 

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    Event date: 2016.5.18 - 2016.5.20

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  98. "溶液法による4H-SiCバルク結晶成長と結晶品質評価"

    楠一彦,関和明,岸田豊,海藤宏志,森口晃治,岡田信宏,大黒寛典,加渡幹尚,土井雅喜,旦野克典,関章憲,佐藤和明,別所毅,原田俊太,宇治原徹

    2016年第63回応用物理学会春季学術講演会 

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    Event date: 2016.3.19 - 2016.3.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  99. "可視光励起光電子分光法を用いたGaPにおけるキャリア散乱の温度依存性評価"

    市橋史朗,川口昂彦,董キン宇,井上明人,桑原真人,伊藤孝寛,原田俊太,田川美穂,宇治原徹

    2016年第63回応用物理学会春季学術講演会 

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    Event date: 2016.3.19 - 2016.3.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  100. "強磁場スパッタ法によるマンガン窒化物薄膜の作製"

    松本利希,川口昂彦,畑野敬史,原田俊太,飯田和昌,宇治原徹,生田博志

    2016年第63回応用物理学会春季学術講演会 

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    Event date: 2016.3.19 - 2016.3.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  101. "超格子構造中のDNA被覆金ナノ粒子の融合に向けた粒子間距離収縮とナノ粒子融合"

    鷲見隼人,磯貝卓巳,中田咲子,吉田直矢,原田俊太,宇治原徹,田川美穂

    2016年第63回応用物理学会春季学術講演会 

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    Event date: 2016.3.19 - 2016.3.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  102. "DDAB平面脂質二重膜の相転移過程の直接観察"

    磯貝卓巳,中田咲子,赤田英里,吉田直矢,鷲見隼人,手老龍吾,原田俊太,宇治原徹,田川美穂

    2016年第63回応用物理学会春季学術講演会 

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    Event date: 2016.3.19 - 2016.3.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  103. "SiC溶液法における溶媒への金属添加による炭素溶解度変化の熱力学計算"

    畑佐豪記,原田俊太,田川美穂,村山健太,加藤智久,宇治原徹

    2016年第63回応用物理学会春季学術講演会 

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    Event date: 2016.3.19 - 2016.3.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  104. "SiC溶液成長における基底面転位と表面モフォロジーの関係"

    堀司紗,村山健太,原田俊太,肖世玉,田川美穂,宇治原徹

    2016年第63回応用物理学会春季学術講演会 

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    Event date: 2016.3.19 - 2016.3.22

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  105. "超高品質SiC溶液成長法の最前線"

    原田俊太,宇治原徹

    日本結晶成長学会・バルク成長分科会 第98回研究会「機能性単結晶材料の最新動向--パワーデバイスから光・圧電まで--」 

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    Event date: 2016.3.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学 西早稲田キャンパス   Country:Japan  

  106. "Direct observation of electrons transported in second conduction mini-band of a semiconductor superlattice by visible-light photoemission spectroscopy" International conference

    Fumiaki Ichihashi, Keniji Nishitani, Xinyu Dong, Takahiko, Kawaguchi, Makoto Kuwahara, Takahiro Ito, Shunta Harada, Miho Tagawa, Toru Ujihara

    SPIE Photonics West 2016 

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    Event date: 2016.2.13 - 2016.2.18

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  107. "Thermal conductivity changes in WO3 films caused by hydrogen intercalation/deintercalation" International conference

    A. Nakamura, K. Aoyagi, S. Harada, M. Tagawa, T. Ujihara

    40th International Conference & Exposition on Advanced Ceramics & Composites(ICACC16) 

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    Event date: 2016.1.24 - 2016.1.29

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  108. “SiC溶液成長における溶媒不純物の取り込み Impurity incorporation during solution growth of SiC”

    原田俊太、村山健太、青柳健大、酒井武信、田川美穂、加藤智久、宇治原徹

    先進パワー半導体分科会 第2回講演会 

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    Event date: 2015.11.9 - 2015.11.10

    Language:Japanese   Presentation type:Poster presentation  

    Venue:大阪国際交流センター   Country:Japan  

  109. “4H-SiC溶液成長法Si面厚膜成長による貫通転位密度の低減 Growth of thick 4H-SiC crystal on Si face to reduce threading dislocation density by solution growth”

    村山健太、堀司紗、原田俊太、肖世玉、青柳健大、酒井武信、田川美穂、宇治原徹

    先進パワー半導体分科会 第2回講演会 

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    Event date: 2015.11.9 - 2015.11.10

    Language:Japanese   Presentation type:Poster presentation  

    Venue:大阪国際交流センター   Country:Japan  

  110. "Temperature Dependence of the Energy Distribution of the Conduction Electrons in GaP Single Crystal" International conference

    Fumiaki Ichihashi, X. Dong, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, M. Tagawa and T. Ujihara

    10th International Symposium on Atomic Level Characterizations for New Materials and Devices'15 (ALC '15) 

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    Event date: 2015.10.25 - 2015.10.30

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  111. “溶媒を用いたAlNウィスカーの直接窒化法における溶媒組成が生成量に与える影響”

    松本昌樹,渡邉将太,竹内幸久,青柳健大,原田俊太,田川美穂,宇治原徹

    第45回結晶成長国内会議(NCCG-45) 

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    Event date: 2015.10.19 - 2015.10.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学学術交流会館   Country:Japan  

  112. “4H-SiCのSi面溶液成長における温度分布制御による異種多形混入の抑制”

    堀司紗,村山健太,肖世玉,青柳健大,原田俊太,酒井武信,田川美穂,宇治原徹

    第45回結晶成長国内会議(NCCG-45) 

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    Event date: 2015.10.19 - 2015.10.21

    Language:Japanese   Presentation type:Poster presentation  

    Venue:北海道大学学術交流会館   Country:Japan  

  113. “4H-SiC溶液成長法Si面厚膜化による低転位密度結晶成長の実現”

    村山健太,原田俊太,肖世玉,堀司紗,青柳健大,酒井武信,田川美穂,宇治原徹

    第45回結晶成長国内会議(NCCG-45) 

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    Event date: 2015.10.19 - 2015.10.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学学術交流会館   Country:Japan  

  114. “脂質二重膜上のDNA被覆ナノ粒子の2次元配列に及ぼすマグネシウムおよび脂質膜形状の影響”

    磯貝卓巳,赤田英里,中田咲子,吉田直矢,手老龍吾,原田俊太,宇治原徹,田川美穂

    第45回結晶成長国内会議(NCCG-45) 

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    Event date: 2015.10.19 - 2015.10.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学学術交流会館   Country:Japan  

  115. “Agナノ粒子の光学捕捉により誘起されるNaClO3キラル結晶化過程その場観察”

    新家寛正,杉山輝樹,丸山美帆子,田川美穂,村山健太,原田俊太,宇治原徹,森勇介

    第45回結晶成長国内会議(NCCG-45) 

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    Event date: 2015.10.19 - 2015.10.21

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学学術交流会館   Country:Japan  

  116. "Distribution of nitrogen doping concentration in 4H-SiC grown by solution method" International conference

    Z. Wang, T. Kawaguchi, K. Murayama, K. Aoyagi, S. Harada, T. Sakai, M. Tagawa, T. Ujihara

    16th International Conference on Silicon Carbide and Related Materials(ICSCRM2015) 

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    Event date: 2015.10.4 - 2015.10.9

    Language:English   Presentation type:Poster presentation  

    Country:Italy  

  117. "Consideration of threading dislocation conversion phenomena during SiC solution growth based on the elastic strain energy" International conference

    S. Harada, S. Xiao, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara

    16th International Conference on Silicon Carbide and Related Materials(ICSCRM2015) 

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    Event date: 2015.10.4 - 2015.10.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Italy  

  118. "High-speed solution growth of single crystal AlN from Cr-Co-Al solvent" International conference

    S. Watanabe, M. Nagaya, Y. Takeuchi, K. Aoyagi, S. Harada, M. Tagawa, T. Ujihara

    16th International Conference on Silicon Carbide and Related Materials(ICSCRM2015) 

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    Event date: 2015.10.4 - 2015.10.9

    Language:English   Presentation type:Poster presentation  

    Country:Italy  

  119. "Solution Growth of AlN Single Crystal on Sapphire using Multi-Component Solvent Designed by Thermodynamic Calculation" International conference

    S. Harada, M. Nagaya, S. Watanabe, M. Chen, Y. Takeuchi, K. Aoyagi, M. Tagawa, T. Ujihara

    2015 International Conference on Solid State Devices and Materials(SSDM2015) 

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    Event date: 2015.9.27 - 2015.9.30

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  120. “金属絶縁体転移に伴う WO3薄膜の熱伝導率変化”

    中村彩乃, 青柳健大, 原田俊太, 田川美穂, 宇治原徹

    公益社団法人日本セラミックス協会 第 28 回秋季シンポジウム 

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    Event date: 2015.9.16 - 2015.9.18

    Language:Japanese   Presentation type:Poster presentation  

    Venue:富山県, 富山大学(五福キャンパス)   Country:Japan  

  121. “脂質二重膜の性質が膜上のDNA被覆金ナノ粒子に及ぼす影響”

    中田咲子, 赤田英里, 磯貝卓巳, 吉田直矢, 手老龍吾, 原田俊太, 宇治原徹, 田川美穂

    2015年 第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9.13 - 2015.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛知県, 名古屋国際会議場   Country:Japan  

  122. “2種のDNAを被覆したナノ粒子の構造体の粒子間距離分布”

    吉田直矢, 赤田絵里, 磯貝卓巳, 中田咲子, 原田俊太, 宇治原徹, 田川美穂

    2015年 第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9.13 - 2015.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛知県, 名古屋国際会議場   Country:Japan  

  123. “溶液法により成長したn型4H-SiC結晶のキャリア濃度分布の評価”

    王 振江, 川口昂彦, 村山健太, 青柳健大, 原田俊太, 酒井武信, 宇治原徹

    2015年 第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9.13 - 2015.9.16

    Language:Japanese   Presentation type:Poster presentation  

    Venue:愛知県, 名古屋国際会議場   Country:Japan  

  124. “Agナノ粒子を含んだNaClO3溶液からの円偏光レーザー誘起キラル結晶化におけるエナンチオ選択的増幅”

    新家寛正, 杉山輝樹, 田川美穂, 村山健太, 原田俊太, 丸山美帆子, 森 勇介, 宇治原徹

    2015年 第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9.13 - 2015.9.16

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛知県, 名古屋国際会議場   Country:Japan  

  125. Effect of Magnesium Ion Concentration on the Two-Dimensional Structure of DNA-Functionalized Nanoparticles on Supported Lipid Bilayer

    Takumi Isogai , Eri Akada, Sakiko Nakada, Naoya Yoshida, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa

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    Event date: 2015.6.22 - 2015.6.24

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  126. Lipid diffusion and phase transition: Influence on DNA-functionalised nanoparticle adsorbates International conference

    S. Nakada, E. Akada, T. Isogai, N. Yoshida, R. Tero, S. Harada, T. Ujihara, M. Tagawa

    5th International Colloids Conference 

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    Event date: 2015.6.21 - 2015.6.24

    Language:English   Presentation type:Oral presentation (general)  

    Country:Austria  

  127. "Lipid diffusion and phase transition: Influence on DNA-functionalised nanoparticle adsorbates." International conference

    S. Nakada, E. Akada, T. Isogai, N. Yoshida, R. Tero, S. Harada, T. Ujihara, M. Tagawa

    5th International Colloids Conference 

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    Event date: 2015.6.21 - 2015.6.24

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  128. Ultra high quality SiC crystal grown by solution method International conference

    T. Ujihara, S. Harada, K. Aoyagi, M. Tagawa, T. Sakai,

    CMCEE 2015 

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    Event date: 2015.6.14 - 2015.6.19

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Canada  

  129. Measurement of Energy Distribution of Conduction Electrons in Superlattice by Visible-Light Photoemission Spectroscopy International conference

    F. Ichihashi, K. Nishitani, X. Dong, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, M. Tagawa, T. Ujihara

    42nd IEEE Photovoltaic Specialists Conference 

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    Event date: 2015.6.14 - 2015.6.19

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  130. "Ultra high quality SiC crystal grown by solution method" International conference

    T. Ujihara, S. Harada, K. Aoyagi, M. Tagawa, T. Sakai

    11th CMCEE 

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    Event date: 2015.6.14 - 2015.6.19

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Canada  

  131. "Measurement of Energy Distribution of Conduction Electrons in Superlattice by Visible-Light Photoemission Spectroscopy" International conference

    F. Ichihashi, K. Nishitani, X. Dong, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, M. Tagawa, T. Ujihara

    42nd IEEE Photovoltaic Specialists Conference 

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    Event date: 2015.6.14 - 2015.6.19

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  132. "Correlation Between Grown Polytypes and Activity Ratio During Solution Growth of SiC with Multi-Component Solvent" International conference

    Atsushi Horio, Shunta Harada, Daiki Koike, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai, Miho Tagawa, Toru Ujihara

    ISPlasma2015 / IC-PLANTS2015 

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    Event date: 2015.3.26 - 2015.3.31

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  133. Correlation Between Grown Polytypes and Activity Ratio During Solution Growth of SiC with Multi-Component Solvent

    A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara

    ISPlasma2015 / IC-PLANTS2015 

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    Event date: 2015.3.26 - 2015.3.31

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  134. "高熱伝導率AlNウィスカーの高効率合成"

    松本昌樹、陳鳴宇、永冶仁、渡邉将太、竹内幸久、原田俊太、田川美穂、宇治原徹、遠藤亮

    公益社団法人日本セラミックス協会 2015年 年会 

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    Event date: 2015.3.18 - 2015.3.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:岡山大学 (津島キャンパス)、岡山県   Country:Japan  

  135. Synthesis of polycrystalline AlN with high thickness by an efficient method

    Pradip Ghosh, Kohei Mizuno, Makoto Hayashi, Yukihisa Takeuchi, Yuichi Aoki, Susumu Sobue, Yasuo Kitou, Jun Hasegawa, Makoto Kobashi, Toru Ujihara

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    Event date: 2015.3.18 - 2015.3.20

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  136. 高熱伝導率AlNウィスカーの高効率合成

    松本昌樹,陳鳴宇,永冶仁,渡邉将太,竹内幸久,原田俊太,田川美穂,宇治原徹,遠藤亮

    公益社団法人日本セラミックス協会 2015年 年会 

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    Event date: 2015.3.18 - 2015.3.20

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  137. "脂質二重膜上におけるDNA被覆金ナノ粒子のセルフアセンブリに対するイオンの効果"

    磯貝 卓巳、赤田 英理、中田 咲子、吉田 直矢、手老 龍吾、原田 俊太、宇治原 徹、田川 美穂

    2015年 第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学 湘南キャンパス、神奈川県   Country:Japan  

  138. "可視光励起光電子分光法を用いた半導体超格子における伝導電子のエネルギー分布測定"

    市橋 史朗、西谷 健治、董 鑫宇、川口 昂彦、桑原 真人、原田 俊太、田川 美穂、伊藤 孝寛、宇治原 徹

    2015年 第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学 湘南キャンパス、神奈川県   Country:Japan  

  139. "SiC溶液成長における貫通転位変換と成長表面のマクロステップの関係"

    原田 俊太、肖 世玉、青柳 健大、村山 健太、酒井 武信、田川 美穂、宇治原 徹

    2015年 第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学 湘南キャンパス、神奈川県   Country:Japan  

  140. "AlN溶液成長における熱力学計算を用いた成長速度の向上"

    渡邉 将太、永冶 仁、陳 鳴宇、竹内 幸久、青柳 健大、原田 俊太、田川 美穂、宇治原 徹

    2015年 第62回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学 湘南キャンパス、神奈川県   Country:Japan  

  141. SiC溶液成長における貫通転位変換と成長表面のマクロステップの関係

    原田俊太、肖世玉、青柳健大、村山健太、酒井武信、田川美穂、宇治原徹

    第63回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  142. 脂質二重膜上におけるDNA被覆金ナノ粒子のセルフアセンブリに対するイオンの効果

    磯貝卓巳,赤田英理,中田咲子,吉田直矢,手老龍吾,原田俊太,宇治原徹,田川美穂

    第65回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  143. AlN溶液成長における熱力学計算を用いた成長速度の向上

    渡邉将太,永冶仁,陳鳴宇,竹内幸久,青柳健大,原田俊太,田川美穂,宇治原徹

    第64回応用物理学会春季学術講演会 

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    Event date: 2015.3.11 - 2015.3.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  144. シンクロトロン X 線トポグラフィによる溶液成長 SiC 結晶の欠陥評価と高品質化

    原田俊太

    第4回名古屋大学シンクロトロン光研究センターシンポジウム 

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    Event date: 2015.1.22

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  145. SiC溶液成長における転位伝播挙動と高品質化

    原田俊太

    第2回グリーンエネルギー材料のマルチスケール創製研究会(松江)プログラム 

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    Event date: 2015.1.11 - 2015.1.13

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  146. "Microstructure Observation of CaFe2As2 Family Thin Films by Transmission Electron Microscopy" International conference

    T. Kawaguchi, S. Harada, R. Fujimoto, Y. Mori, I. Nakamura, T. Hatano, T. Ujihara, H. Ikuta

    27th International Symposium on Superconductivity (ISS2014) 

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    Event date: 2014.11.25 - 2014.11.27

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  147. Si-Al-Cu溶媒を用いた高Alドープ4H-SiC結晶の溶液成長

    楠一彦、関和明、亀井一人、原田俊太、宇治原徹

    先進パワー半導体分科会 第1回講演会 

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    Event date: 2014.11.19 - 2014.11.20

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  148. SiC溶液成長過程における貫通転位変換現象の成長表面との相互作用による考察

    原田俊太、肖世玉、村山健太、青柳健大、酒井武信、田川美穂、宇治原徹

    先進パワー半導体分科会 第1回講演会 

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    Event date: 2014.11.19 - 2014.11.20

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  149. 非対称温度分布下でのSiC溶液成長法におけるマランゴニ対流を考慮した3次元数値シミュレーションと表面形状の相関

    古池大輝、梅崎智典、村山健太、青柳健大、原田俊太、田川美穂、酒井武信、宇治原徹

    先進パワー半導体分科会 第1回講演会 

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    Event date: 2014.11.19 - 2014.11.20

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  150. "Si-Al-Cu溶媒を用いた高Alドープ4H-SiC結晶の溶液成長 Heavily Al doped 4H-SiC growth by solution growth technique using Si-Al-Cu melt as a solvent"

    楠一彦、関和明、亀井一人、原田俊太、宇治原徹

    先進パワー半導体分科会 第1回講演会 1st Meeting on Advanced Power Semiconductor 「未来を創る先進パワーエレクトロニクスと低炭素社会」 

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    Event date: 2014.11.19 - 2014.11.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ウインクあいち、愛知県   Country:Japan  

  151. "SiC溶液成長過程における貫通転位変換現象の成長表面との相互作用による考察 Consideration of threading dislocation conversion phenomena during the solution growth of SiC based on the interaction between the growth surface and the dislocation"

    原田俊太、肖世玉、村山健太、青柳健大、酒井武信、田川美穂、宇治原徹

    先進パワー半導体分科会 第1回講演会 1st Meeting on Advanced Power Semiconductor 「未来を創る先進パワーエレクトロニクスと低炭素社会」 

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    Event date: 2014.11.19 - 2014.11.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ウインクあいち、愛知県   Country:Japan  

  152. "非対称温度分布下でのSiC溶液成長法におけるマランゴニ対流を考慮した3次元数値シミュレーションと表面形状の相関 Relationship between Surface Morphology and Numerical Simulation in Consideration of Marangoni Convection during SiC Solution Growth under a Non-Axisymmetric Temperature Distribution"

    古池大輝、梅崎智典、村山健太、青柳健大、原田俊太、田川美穂、酒井武信、宇治原徹

    先進パワー半導体分科会 第1回講演会 1st Meeting on Advanced Power Semiconductor 「未来を創る先進パワーエレクトロニクスと低炭素社会」 

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    Event date: 2014.11.19 - 2014.11.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ウインクあいち、愛知県   Country:Japan  

  153. 円偏光レーザー誘起結晶化によるキラリティ制御の可能性

    新家寛正, 村山健太, 原田俊太, 田川美穂, 宇治原徹

    第44回 結晶成長国内会議 NCCG-44 

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    Event date: 2014.11.6 - 2014.11.8

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  154. SiC 溶液成長過程における貫通転位変換現象の弾性論的考察

    原田俊太、肖世玉、村山健太、青柳健大、酒井武信、田川美穂、宇治原徹

    第44回 結晶成長国内会議 NCCG-44 

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    Event date: 2014.11.6 - 2014.11.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  155. 化学平衡計算に基づいた過飽和領域の制御によるAlN 単結晶溶液成長

    永冶仁,陳鳴宇,渡邉将太,竹内幸久,原田俊太,田川美穂,宇治原徹

    第44回 結晶成長国内会議 NCCG-44 

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    Event date: 2014.11.6 - 2014.11.8

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  156. "円偏光レーザー誘起結晶化によるキラリティ制御の可能性"

    新家寛正,村山健太,原田俊太,田川美穂,宇治原徹

    第44回結晶成長国内会議(NCCG-44) 

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    Event date: 2014.11.6 - 2014.11.8

    Language:Japanese   Presentation type:Poster presentation  

    Venue:学習院創立百周年記念会館, 東京都   Country:Japan  

  157. "SiC溶液成長過程における貫通転位変換現象の弾性論的考察"

    原田俊太,肖世玉,村山健太,青柳健大,酒井武信,田川美穂,宇治原徹

    第44回結晶成長国内会議(NCCG-44) 

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    Event date: 2014.11.6 - 2014.11.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:学習院創立百周年記念会館, 東京都   Country:Japan  

  158. "化学平衡計算に基づいた過飽和領域の制御によるAlN単結晶溶液成長"

    永冶仁,陳鳴宇,渡邉将太,竹内幸久,原田俊太,田川美穂,宇治原徹

    第44回結晶成長国内会議(NCCG-44) 

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    Event date: 2014.11.6 - 2014.11.8

    Language:Japanese   Presentation type:Poster presentation  

    Venue:学習院創立百周年記念会館, 東京都   Country:Japan  

  159. Two-dimensional assembly of Au nanoparticles through DNA hybridization on supported lipid bilayer International conference

    T. Isogai, E. Akada, S. Nakada, R. Tero, S. Harada, T. Ujihara and M. Tagawa

    20th International Conference on DNA Computing and Molecular Programming(DNA20) 

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    Event date: 2014.9.22 - 2014.9.26

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  160. Improvement of surface morphology by solution flow control in solution growth of SiC on off-axis seeds International conference

    T. Umezaki, D. Koike, S. Harada, T. Ujihara

    10th European Conference on Silicon Carbide and Related Materials 

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    Event date: 2014.9.21 - 2014.9.25

    Language:English   Presentation type:Poster presentation  

    Country:France  

  161. Heavily Al doped 4H-SiC growth by the top-seeded solution growth technique using Si-Al-Cu melt as a solvent International conference

    K. Kusunoki , K. Kamei, K. Seki, Y. Kishida, K. Moriguchi, H. Kaidoh, S. Harada and T. Ujihara

    10th European Conference on Silicon Carbide and Related Materials 

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    Event date: 2014.9.21 - 2014.9.25

    Language:English   Presentation type:Poster presentation  

    Country:France  

  162. Dislocation conversion during SiC solution growth for high-quality crystal International conference

    S. Harada, Y. Yamamoto, S. Xiao, N. HARA, D. Koike, T. Mutoh, M. Tagawa, T. Sakai, T. Ujihara

    10th European Conference on Silicon Carbide and Related Materials 

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    Event date: 2014.9.21 - 2014.9.25

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:France  

  163. Threading screw dislocations conversion behavior on C face with different surface morphology during 4H-SiC solution growth International conference

    S. Xiao, N. Hara, S. Harada, T. Sakai, T. Ujihara

    10th European Conference on Silicon Carbide and Related Materials 

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    Event date: 2014.9.21 - 2014.9.25

    Language:English   Presentation type:Poster presentation  

    Country:France  

  164. Control of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth for SiC Crystal International conference

    D. Koike, T. Umezaki, S. Harada, M. Tagawa, T. Sakai, T. Ujihara

    10th European Conference on Silicon Carbide and Related Materials 

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    Event date: 2014.9.21 - 2014.9.25

    Language:English   Presentation type:Poster presentation  

    Country:France  

  165. 3C-SiC crystal on sapphire by solution growth method International conference

    K. Shibata, S. Harada, T. Ujihara

    10th European Conference on Silicon Carbide and Related Materials 

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    Event date: 2014.9.21 - 2014.9.25

    Language:English   Presentation type:Poster presentation  

    Country:France  

  166. "Control of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth for SiC Crystal" International conference

    Daiki KOIKE, Tomonori UMEZAKI, Shunta HARADA, Miho TAGAWA, Takenobu SAKAI, Toru UJIHARA

    10th European Conference on Silicon Carbide and Related Materials(ECSCRM 2014) 

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    Event date: 2014.9.21 - 2014.9.25

    Language:English   Presentation type:Poster presentation  

    Country:France  

  167. "Improvement of surface morphology by solution flow control in solution growth of SiC on off-axis seeds" International conference

    Tomonori UMEZAKI, Daiki KOIKE, Shunta HARADA, Toru UJIHARA

    10th European Conference on Silicon Carbide and Related Materials(ECSCRM 2014) 

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    Event date: 2014.9.21 - 2014.9.25

    Language:English   Presentation type:Poster presentation  

    Country:France  

  168. "3C-SiC crystal on sapphire by solution growth method" International conference

    Kenji SHIBATA, Shunta HARADA, Toru UJIHARA

    10th European Conference on Silicon Carbide and Related Materials(ECSCRM 2014) 

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    Event date: 2014.9.21 - 2014.9.25

    Language:English   Presentation type:Poster presentation  

    Country:France  

  169. 高品質4H-SiC溶液成長における多形変化抑制メカニズム

    原田俊太,山本祐 治,村山健太,青柳健大,酒井武信,田川美穂,宇治原徹

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  170. SiC溶液成長法における種結晶形状の成長表面への影響と貫通らせん転位変換

    古池大輝,梅崎智典,原田俊太,田川美穂,酒井武信,宇治原徹

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  171. The investigation of step structure with different TSDs conversion behavior during 4H-SiC solution growth

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    Event date: 2014.9.17 - 2014.9.20

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  172. 多元溶媒窒化法を用いた単結晶AlNウィスカーの合成

    陳鳴宇,永冶仁,渡邉 将太,竹内幸久,原田俊太,荒井重勇,田川美穂,宇治原徹

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  173. 脂質二重膜上におけるDNA被覆金ナノ粒子の拡散現象

    中田咲子,赤田英里, 磯貝卓巳,手老龍吾,原田俊太,宇治原徹,田川美穂

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  174. CaFe2As2系超伝導薄膜の透過電子顕微鏡観察

    川口昂彦,原田俊太,藤本亮 祐,森康博,中村伊吹,畑野敬史,宇治原徹,生田博志

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  175. AlN溶液成長における化学平衡計算を用いた実験条件の決定

    永冶仁,陳鳴 宇,渡邉将太,竹内幸久,原田俊太,田川美穂,宇治原徹

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  176. "高品質4H-SiC溶液成長における多形変化抑制メカニズム"

    原田俊太,山本祐治,村山健太,青柳健大,酒井武信,田川美穂,宇治原徹

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学札幌キャンパス、北海道   Country:Japan  

  177. "脂質二重膜上におけるDNA被覆金ナノ粒子の拡散現象"

    中田咲子,赤田英里,磯貝卓巳,手老龍吾,原田俊太,宇治原徹,田川美穂

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学札幌キャンパス、北海道   Country:Japan  

  178. "CaFe2As2系超伝導薄膜の透過電子顕微鏡観察"

    川口昂彦,原田俊太,藤本亮祐,森康博,中村伊吹,畑野敬史,宇治原徹,生田博志

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学札幌キャンパス、北海道   Country:Japan  

  179. "SiCフラックス成長におけるSiC基板/フラックス界面の高温真空レーザー顕微鏡観察"

    小沼碧海,丸山伸伍,原田俊太,宇治原徹,加藤智久,蔵重和央,奥村元,松本祐司

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学札幌キャンパス、北海道   Country:Japan  

  180. "AlN溶液成長における化学平衡計算を用いた実験条件の決定"

    永冶仁,陳鳴宇,渡邉将太,竹内幸久,原田俊太,田川美穂,宇治原徹

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学札幌キャンパス、北海道   Country:Japan  

  181. "多元溶媒窒化法を用いた単結晶AlNウィスカーの合成"

    陳鳴宇,永冶仁,渡邉将太,竹内幸久,原田俊太,荒井重勇,田川美穂,宇治原徹

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学札幌キャンパス、北海道   Country:Japan  

  182. "SiC溶液成長法における種結晶形状の成長表面への影響と貫通らせん転位変換"

    古池大輝,梅崎智典,原田俊太,田川美穂,酒井武信,宇治原徹

    第75回応用物理学会秋季学術講演会 

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    Event date: 2014.9.17 - 2014.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学札幌キャンパス、北海道   Country:Japan  

  183. "The investigation of step structure with different TSDs conversion behavior during 4H-SiC solution growth"

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    Event date: 2014.9.17 - 2014.9.20

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  184. Structure of basal plane defects formed by the conversion of threading screw dislocation during solution growth of SiC International conference

    S. Harada, S.Y. Xiao, M. Tagawa, Y. Yamamoto, S. Arai, N. Tanaka and T. Ujihara

    Solid State Devices and Materials 2014 

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    Event date: 2014.9.8 - 2014.9.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  185. Correlation between Surface Morphology and Threading Dislocation Conversion in Solution Growth of SiC International conference

    Shunta Harada, Shiyu Xiao, Natsumi Hara, Daiki Koike, Takuya Mutoh, Miho Tagawa and Toru Ujihara

    International Union of Materials Research Societies International Conference in Asia 2014 

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    Event date: 2014.8.24 - 2014.8.30

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  186. Characterization of Newly Generated Defects during Solution Growth of 4H-SiC International conference

    Shiyu Xiao, Shunta Harada, Natsumi Hara, Miho Tagawa and Toru Ujihara

    International Union of Materials Research Societies International Conference in Asia 2014 

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    Event date: 2014.8.24 - 2014.8.30

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  187. Defect evolution in high-qualit 4H-SiC grown by solution method International conference

    S. Harada, M. Tagawa, T. Ujihara

    International Union of Crystallography 2014 

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    Event date: 2014.8.5 - 2014.8.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Canada  

  188. p型SiC溶液成長における欠陥変換挙動

    原田俊太

    高品質SiC結晶次世代成長法に関する研究会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  189. n型およびp型SiC溶液成長過程における欠陥挙動と高品質結晶成長

    原田俊太

    第91回バルク成長分科会研究会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  190. NaClO3 溶液成長におけるアキラル-キラル多形転移を介したキラリティの発生と増幅 International conference

    新家寛正, 原田俊太, 宇治原徹, 三浦均, 木村勇気, 上羽牧夫, 塚本勝男

    日本地球惑星科学連合2014年大会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  191. 可視光励起光電子分光法による半導体超格子ミニバンド構造の有効質量評価 International conference

    西谷健治,志村大樹,市橋史朗,桒原真人,伊藤孝寛,原田俊太,田川美穂,宇治原徹

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  192. SiC溶液法C面成長におけるTSD変換 International conference

    原田俊太,肖世玉,原奈都美,原田俊太,宇治原徹

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  193. SiC溶液成長における貫通らせん転位変換の弾性エネルギーによる考察 International conference

    原田俊太,肖世玉,原奈都美,勝野弘康,田川美穂,宇治原徹

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  194. 4H-SiC溶液成長法における凸形状成長による貫通らせん転位の変換挙動 International conference

    古池大輝,梅崎智典,堀尾篤史,原田俊太,田川美穂,宇治原徹

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  195. 可視光励起光電子分光法による半導体中の伝導電子の直接観察 International conference

    市橋史朗,志村大樹,西谷健治,桑原真人,伊藤孝寛,原田俊太,田川美穂,宇治原徹

    日本物理学会 第69回年次大会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  196. Direct Measurement of Conduction Miniband Structure in Superlattice by Visible-Light Photoemission Spectroscopy International conference

    F. Ichihashi, D. Shimura, K. Nishitani, M. Kuwahara, T. Ito, S. Harada, H. Katsuno, M. Tagawa, T. Ujihara

    Photovoltaic Specialists Conference(The PVSC-40) 

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    Event date: 2014.1.8 - 2014.1.13

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  197. Structure of basal plane defects formed by threading screw dislocation conversion during high quality SiC solution growth International conference

    S.Harada, R.Kunimatsu, Xiao Shiyu, Y.Yamamoto, M.Tagawa, Y.Yamamoto, S.Arai, N.Tanaka, T.Ujihara

    ISETS '13 

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    Event date: 2013.12.13 - 2013.12.15

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  198. Observation of basal plane dislocations generated during solution growth in 4H-silicon carbide International conference

    S.Y.Xiao, S.Harada, T.Ujihara

    ISETS '13 

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    Event date: 2013.12.13 - 2013.12.15

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  199. Two-dimensional crystallization of DNA-functionalized Au nanoparticles using lipid diffusion International conference

    T.Isogai, E.Akada, A.Piednoir, Y.Akahoshi, R.Tero, S.Harada, T.Ujihara, M.Tagawa

    ISETS '13 

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    Event date: 2013.12.13 - 2013.12.15

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  200. Direct Observation of Conduction Band Structure and Conduction Electron Distribution in Semiconductor for Intermediate-band Solar Cells International conference

    F.Ichihashi, D.Shimura, K.Nishitani, M.Kuwahara, S.Harada, T.Ito, M.Tagawa, T.Ujihara

    ISETS '13 

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    Event date: 2013.12.13 - 2013.12.15

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  201. Aluminum Nitride Whiskers with High Aspect Ratio Grown from Multi-Component Melt International conference

    M.Y.Chen, H.Matsubara, K.Mizuno, M.Nagaya, Y.Takeuchi, S.Harada, T.Ujihara, Y.Aoki, K.Kohara, T.Kano

    ISETS '13 

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    Event date: 2013.12.13 - 2013.12.15

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  202. Evaluation of Mini-Bands Formed in Superlattice Structure for Intermediate-Band Solar Cell International conference

    D.Shimura, F.Ichihashi, K.Nishitani, S.Harada, T.Ito, M.Kuwahara, M.Matsunami, S.Kimura, M.Tagawa, T.Ujihara

    ISETS '13 

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    Event date: 2013.12.13 - 2013.12.15

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  203. 多元溶媒SiC溶液成長における成長多形と活量比aSi/aCの相関 International conference

    堀尾篤史、原田俊太、田川美穂、宇治原徹

    第22回SiC講演会 

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    Event date: 2013.12.9 - 2013.12.10

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  204. SiC溶液成長過程における基底面転位の形成 International conference

    肖 世玉、原田 俊太、宇治原 徹

    第22回SiC講演会 

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    Event date: 2013.12.9 - 2013.12.10

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  205. SiC溶液成長における過飽和度制御による凸形状成長 International conference

    古池大輝、梅崎智典、堀尾篤史、原田俊太、田川美穂、宇治原徹

    第22回SiC講演会 

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    Event date: 2013.12.9 - 2013.12.10

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  206. 4H-SiC溶液成長における成長表面のステップ構造と貫通転位変換挙動の相関 International conference

    原田俊太、山本祐治、肖世玉、堀尾篤史、田川美穂、宇治原徹

    第22回SiC講演会 

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    Event date: 2013.12.9 - 2013.12.10

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  207. SiC溶液成長における欠陥変換挙動と高品質結晶成長 International conference

    原田俊太

    表面技術協会 関東支部・第86回講演会「ひらめき・未来材料~進化する選択的物質貯蔵・輸送・分離・変換材料~ 

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    Event date: 2013.11.29

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  208. NaClO3溶液成長におけるアキラルな準安定相を介したキラル結晶形成過程

    新家寛正,原田俊太,宇治原徹,三浦均,木村勇気,栗林貴弘上羽牧夫, 塚本勝男

    第43回結晶成長国内会議 

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    Event date: 2013.11.6 - 2013.11.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  209. DNAと脂質二重膜を用いたナノ粒子の2次元結晶化

    磯貝卓巳,赤田英里,Agnes Piednoir,赤星祐樹,手老龍吾,原田俊太,宇 治原徹,田川美穂

    第43回結晶成長国内会議 

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    Event date: 2013.11.6 - 2013.11.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  210. 4H-SiC溶液成長過程における貫通転位変換挙動と成長表面モフォロジーの相関

    原田俊太,山本祐治,肖世玉,堀尾篤史、田川美穂,宇治原徹

    第43回結晶成長国内会議 

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    Event date: 2013.11.6 - 2013.11.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  211. 多元溶媒を用いたAlNウィスカーの成長

    陳鳴宇,松原弘明,水野恒平,永冶仁,竹内幸久,原田俊太,青木祐一,小原公和, 加納豊広,宇治原徹

    第43回結晶成長国内会議 

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    Event date: 2013.11.6 - 2013.11.8

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  212. NaClO3溶液成長におけるアキラルな準安定相の溶解度測定

    新家寛正,原田俊太,宇治原徹,三浦均,木村勇気,上羽牧夫, 塚本勝男

    第43回結晶成長国内会議 

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    Event date: 2013.11.6 - 2013.11.8

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  213. DNA-mediated Nanoparticle Assembly International conference

    M. Tagawa, T. Isogai, E. Akada, S. Harada, T. Ujihara

    DNA-mediated Nanoparticle Assembly 

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    Event date: 2013.10.7 - 2013.10.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  214. Increase in the growth rate by rotating the seed crystal at a high speed during the solution growth of SiC International conference

    T. Umezaki, D. Koike, S. Harada, T. Ujihara

    ICSCRM 2013 

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    Event date: 2013.9.29 - 2013.10.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  215. Control of dislocation conversion during solution growth by changing surface step structure International conference

    Shunta Harada , Yuji Yamamoto , Shiyu Xiao, Atsushi Horio , Miho Tagawa , Toru Ujihara

    ICSCRM 2013 

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    Event date: 2013.9.29 - 2013.10.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  216. N-type doping of 4H-SiC by top-seeded solution growth technique International conference

    K. Kusunoki, K. Kamei, K. Seki, S. Harada, Toru Ujihara

    ICSCRM 2013 

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    Event date: 2013.9.29 - 2013.10.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  217. The Suppression of the Trenches by the Control of Solution Flow above Growth Surface in the Solution Growth of SiC International conference

    C. Zhu, S. Harada, S. Xiao, K. Seki, M. Tagawa, Y. Matsumoto, T. Kato, K. Kurashige, H. Okamura, and T. Ujihara

    ICSCRM 2013 

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    Event date: 2013.9.29 - 2013.10.4

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  218. 角度分解光電子分光法を用いた半導体超格子のミニバンド評価

    志村大樹,市橋史朗,西谷健治,原田俊太,伊藤孝寛,桒原真人,松波雅治,木村真一,田川美穂,宇治原徹

    2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  219. SiCフラックス成長におけるSi-NiフラックスのAl添加効果

    小沼碧海,丸山伸伍,原田俊太,宇治原徹,加藤智久,蔵重和央,奥村元,松本祐司

    2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  220. SiC溶液成長過程における基底面転位の形成

    肖世玉,朱燦,原田俊太,宇治原徹

    2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  221. SiC溶液成長過程における貫通転位変換と成長表面のステップ構造

    原田俊太,山本祐治,肖世玉,堀尾篤史,田川美穂,宇治原徹

    2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  222. SiC 溶液成長における流れ制御によるトレンチ形成の抑制

    朱燦,原田俊太,関和明,肖世玉,田川美穂,松本祐司,加藤智久,蔵重和央,奥村元,宇治原徹

    2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  223. Fe 過剰BaFe2(As,P)2 薄膜の臨界電流密度増大の起源

    森康博,藤本亮祐,坂上彰啓,原田俊太,宇治原徹,田渕雅夫,生田博志

    2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  224. 脂質分子をキャリアとしたDNA被覆金ナノ粒子の2次元結晶化

    磯貝卓巳,Agnes Piednoir,赤田英里,赤星祐樹,手老龍吾,原田俊太,宇治原徹,田川美穂

    2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  225. 可視光励起光電子分光法による伝導電子の直接観察

    市橋史朗,志村大樹,西谷健治,桒原真人,伊藤孝寛,原田俊太,田川美穂,宇治原徹

    2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  226. 可視光励起光電子分光法による半導体超格子構造の伝導キャリア観察

    西谷健治,市橋史朗,志村大樹,桒原真人,伊藤孝寛,原田俊太,田川美穂,宇治原徹

    2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9.16 - 2013.9.20

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  227. 多元溶媒を用いた高アスペクト比AlN ウィスカーの成長

    陳鳴宇, 松原弘明, 水野恒平, 永冶仁, 竹内幸久, 原田俊太, 宇治原徹, 青木祐一, 小原公和, 加納豊広

    公益社団法人日本セラミックス協会 第26回秋季シンポジウ 

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    Event date: 2013.9.4 - 2013.9.6

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  228. Evolution of threading screw dislocation conversion during solution growth of 4H-SiC International conference

    Shunta Harada , Yuji Yamamoto , Kazuaki Seki , Atsushi Horio , Takato Mitsuhashi , Miho Tagawa , Toru Ujihara

    17th International Conference on Crystal Growth and Epitaxy 

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    Event date: 2013.8.11 - 2013.8.17

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  229. Ultra-high quality SiC crystal grown by solution method utilizing the conversion from threading dislocations to basal plane defects International conference

    Toru Ujihara , Yuji Yamamoto , Shunta Harada , Shiyu Xiao , Kazuaki Seki

    17th International Conference on Crystal Growth and Epitaxy 

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    Event date: 2013.8.11 - 2013.8.17

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  230. Two Pathways Determining Chirality in NaClO3 Crystals Grown from Solution via Achiral Precursors International conference

    Hiromasa Niinomi, Hitoshi Miura, Yuki Kimura, Takahiro Kuribayashi 2, Makio Uwaha, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto

    17th International Conference on Crystal Growth and Epitaxy 

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    Event date: 2013.8.11 - 2013.8.17

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  231. Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers International conference

    Takumi Isogai , Agnes Piednoir , Eri Akada, Yuki Akahoshi , Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa

    17th International Conference on Crystal Growth and Epitaxy 

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    Event date: 2013.8.11 - 2013.8.17

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  232. Growth of high quality 3C-SiC on hexagonal SiC seed using TSSG method International conference

    Kazuaki Seki , Shota Yamamoto, Shunta Harada, Toru Ujihara

    17th International Conference on Crystal Growth and Epitaxy 

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    Event date: 2013.8.11 - 2013.8.17

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  233. Two-dimensional crystallization of DNA-functionalized nanoparticles via lipid diffusion in supported lipid bilayers International conference

    Takumi Isogai , Agnes Piednoir , Eri Akada, Yuki Akahoshi , Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa

    15th Summer School on Crystal Growth 

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    Event date: 2013.8.11 - 2013.8.17

    Language:English   Presentation type:Poster presentation  

    Country:Poland  

  234. Ultrahigh-resolution direct observation of mini-bands formed in InGaAs/AlGaAs superlattice International conference

    Daiki Shimura, Fumiaki Ichihashi, Kenji Nishitani, Shunta Harada, Makoto Kuwahara, Takahiro Ito, Masaharu Matsunami, Shin-ichi Kimura, Takenobu Sakai, Miho Tagawa, Toru Ujihara

    Photovoltaic specialists conference 39th 

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    Event date: 2013.7.16 - 2013.7.21

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  235. Electron Spectroscopy of Conduction Electrons Exited by Visible Light Utilizing NEA Surface International conference

    Fumiaki Ichihashi, Daiki Shimura, Kenji Nishitani, Makoto Kuwahara, Takahiro Ito, Shunta Harada, Miho Tagawa, Toru Ujihara

    Photovoltaic specialists conference 39th 

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    Event date: 2013.7.16 - 2013.7.21

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  236. Nanoparticle Assembly mediated by Designed DNA Nanostructures International conference

    M. Tagawa, O. Gang, K. Yager, T. Isogai, E. Akada, S. Harada, T. Ujihara

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    Event date: 2013.6.30 - 2013.7.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  237. Solution growth of high quality 3C-SiC on a vicinal 6H-SiC International conference

    T. Ujihara, K. Seki, S. Yamamoto, S. Harada, M. Tagawa

    HeteroSiC-WASMPE2013 

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    Event date: 2013.6.17 - 2013.6.19

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  238. 高品質SiC溶液成長

    宇治原徹, 原田俊太,

    一般社団法人資源・素材学会 平成25年度春季大会 

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    Event date: 2013.3.28 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  239. SiC溶液成長において流速の変化が表面モフォロジーに与える影響

    朱燦,原田俊太,関和明,田川美穂,松本祐司,加藤智久,蔵重和央,奥村元,宇治原徹

    2012年度春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  240. 3C-SiC 溶液成長における多形制御と欠陥抑制

    関和明,山本翔太,原田俊太,宇治原徹

    2012年度春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  241. 酸化タングステンの酸素欠損に伴う熱伝導率の変化

    弓削勇輔,原田俊太,田川美穂,宇治原徹

    2012年春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  242. AlGaAs/InGaAs超格子構造におけるミニバンドの超高分解能直接観察

    志村大樹,市橋史朗,原田俊太,桒原真人,伊藤孝寛,松波雅治,木村真一,酒井武信,田川美穂,宇治原徹

    2012年度春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  243. 脂質分子の拡散によるDNA被覆金ナノ粒子の2次元構造体形成

    磯貝卓巳,Agnes Piednoir,赤田英里,祐樹赤星,手老龍吾,原田俊太,宇治原徹,田川美穂

    2012年度春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  244. NEA表面を利用した伝導電子エネルギーの直接測定

    市橋史朗,志村大樹,西谷健治,原田俊太,桑原真人,伊藤孝寛,田川美穂,宇治原徹

    2012年度春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  245. 4H-SiC溶液成長過程における貫通らせん転位変換により形成する欠陥の微細構造

    原田俊太,國松亮太,田川美穂,山本悠太,荒井重勇,田中信夫,宇治原徹

    2012年度春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3.27 - 2013.3.30

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  246. Al融液窒化法を用いたAlN多結晶の作製におけるMgによる窒化促進効果の検証 International conference

    水野恒平, 松原弘明, 永冶仁, 竹内幸久, 原田俊太, 宇治原徹, 加納豊広, 青木祐一, 小原公和

    日本セラミックス協会2013年 年会 

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    Event date: 2013.3.17 - 2013.3.19

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  247. Observation of Conduction Electrons in Superlattice Structure by Visible Light Photoemission Spectroscopy International conference

    Kenji Nishitani, Fumiaki Ichihashi, Daiki Shimura, Shunta Harada, Makoto Kuwahara, Miho Tagawa, Takahiro Ito, Toru Ujihara

    the 23rd International Photovoltaic Science and Engineering Conference(PVSEC-23) 

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    Event date: 2013

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  248. 金属負極蓄電池の実現に向けた配向結晶集電体によるデンドライト抑制 International conference

    三橋貴仁, 伊藤靖仁, 竹内幸久, 原田俊太, 田川美穂, 宇治原 徹

    第54回電池討論会 

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    Event date: 2013

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  249. 溶液成長過程における貫通転位変換を利用した高品質4H-SiCの実現

    原田俊太、山本祐治、関 和明、田川美穂、宇治原徹

    SiC 及び関連ワイドギャップ半導体研究会 第21 回講演会 

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    Event date: 2012.11.19 - 2012.11.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:大阪市中央公会堂   Country:Japan  

  250. TSSG 法による高品質3C-SiC の成長

    関 和明,原田俊太,宇治原徹

    SiC 及び関連ワイドギャップ半導体研究会 第21 回講演会 

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    Event date: 2012.11.19 - 2012.11.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:大阪市中央公会堂   Country:Japan  

  251. Si-C-X溶媒を用いたSiC 溶液成長における結晶化多形の熱力学的考察

    堀尾篤史、原田俊太、宇治原徹

    SiC 及び関連ワイドギャップ半導体研究会 第21 回講演会 

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    Event date: 2012.11.19 - 2012.11.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:大阪市中央公会堂   Country:Japan  

  252. 透過電子顕微鏡法によるSiC 溶液成長における欠陥挙動解析

    原田俊太、國松亮太、田川美穂、山本悠太、荒井重勇、田中信夫、宇治原徹

    SiC 及び関連ワイドギャップ半導体研究会 第21 回講演会 

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    Event date: 2012.11.19 - 2012.11.20

    Language:Japanese   Presentation type:Poster presentation  

    Venue:大阪市中央公会堂   Country:Japan  

  253. 溶液法による3C-SiCバルク結晶成長

    関 和明,原田俊太,宇治原徹

    第42回日本結晶成長学会 NCCG-42 

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    Event date: 2012.11.9 - 2012.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  254. 溶液法による高品質SiC結晶成長メカニズム

    原田俊太、山本祐治、関 和明、堀尾篤史、三橋貴仁、田川美穂、宇治原徹

    第42回日本結晶成長学会 NCCG-42 

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    Event date: 2012.11.9 - 2012.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  255. SiC溶液成長における窒素ドープによる積層欠陥の形成

    原田俊太、関和明、楠一彦、田川美穂、宇治原徹

    第42回日本結晶成長学会 NCCG-42 

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    Event date: 2012.11.9 - 2012.11.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:九州大学   Country:Japan  

  256. 3C-SiC溶液成長における双晶抑制

    関 和明,原田俊太,宇治原徹

    第42回日本結晶成長学会 NCCG-42 

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    Event date: 2012.11.9 - 2012.11.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:九州大学   Country:Japan  

  257. 溶液法によるα-Al2O3上へのAlNヘテロエピタキシャル成長

    松原弘明,水野恒平,竹内幸久,原田俊太,木藤泰男,奥野英一,宇治原徹

    第42回日本結晶成長学会 NCCG-42 

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    Event date: 2012.11.9 - 2012.11.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  258. 一方向の溶液流れ下におけるSiCのステップバンチングの挙動

    朱燦、原田俊太、関和明、新家寛正、田川美穂、宇治原徹

    第42回日本結晶成長学会 NCCG-42 

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    Event date: 2012.11.9 - 2012.11.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:九州大学   Country:Japan  

  259. Evolution of Threading Edge Dislocation During Solution Growth of SiC International conference

    S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi and T. Ujihara

    SSDM2012 

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    Event date: 2012.9.25 - 2012.9.27

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  260. Direct Observation of Mini-bands in AlGaAs/GaAs Superlattice for Intermediate Band Solar Cell International conference

    D. Shimura, K. Hashimoto, F. Ichihashi, S. Harada, T. Ito, M. Kuwahara, M. Matsunami, S. Kimura, T. Sakai,T. Ujihara

    IUMRS-ICEM 2012 

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    Event date: 2012.9.23 - 2012.9.28

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  261. Direct Observation of Defect Evolution during Solution Growth of SiC by Synchrotron X-ray Topography International conference

    S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi and T. Ujihara

    IUMRS-ICEM 2012 

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    Event date: 2012.9.23 - 2012.9.28

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  262. Mechanisms behind low lattice thermal conduction of high density of planar defects containing TiO2-x by atomistic simulations International conference

    Y. Miyauchi, M. Tada, M. Yoshiya, S. Harada, K. Tanaka, H. Yasuda, H. Inui

    IUMRS-ICEM 2012 

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    Event date: 2012.9.23 - 2012.9.28

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  263. Al 融液窒化法において成長温度がAlN組織形成に与える影響

    水野恒平,松原弘明,竹内幸久,原田俊太,宇治原徹,青木祐一,小原公和

    第25回セラミックス協会秋季シンポジウム 

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    Event date: 2012.9.19 - 2012.9.21

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  264. VS 法による高アスペクト比AlN ウィスカーの成長

    松原弘明,水野恒平,竹内幸久,原田俊太,宇治原徹,青木祐一,小原公和

    第25回セラミックス協会秋季シンポジウム 

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    Event date: 2012.9.19 - 2012.9.21

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  265. 溶液法によるサファイア基板上へのAlN単結晶成長

    松原弘明,水野恒平,竹内幸久,原田俊太,木藤泰男,奥野英一,宇治原徹

    第73回 応用物理学会学術講演会 

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    Event date: 2012.9.11 - 2012.9.14

    Language:Japanese   Presentation type:Poster presentation  

    Venue:愛媛大学・松山大学   Country:Japan  

  266. SiC溶液成長における流れがステップバンチングに及ぼす影響

    Can Zhu,原田俊太,関 和明,新家寛正,宇治原徹

    第73回 応用物理学会学術講演会 

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    Event date: 2012.9.11 - 2012.9.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学・松山大学   Country:Japan  

  267. 4H-SiC溶液成長における貫通刃状転位の選択的変換

    原田俊太,山本祐治,関 和明,堀尾篤史,三橋貴仁,宇治原徹

    第73回 応用物理学会学術講演会 

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    Event date: 2012.9.11 - 2012.9.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学・松山大学   Country:Japan  

  268. DPBフリー3C-SiCの溶液成長

    関 和明,原田俊太,宇治原徹

    第73回 応用物理学会学術講演会 

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    Event date: 2012.9.11 - 2012.9.14

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学・松山大学   Country:Japan  

  269. TSSG法で育成した4H-SiC結晶の窒素ドーピング挙動

    楠 一彦,関 和明,原田俊太,亀井一人,矢代将斉,宇治原徹

    第73回 応用物理学会学術講演会 

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    Event date: 2012.9.11 - 2012.9.14

    Language:Japanese   Presentation type:Poster presentation  

    Venue:愛媛大学・松山大学   Country:Japan  

  270. Solution growth of DPB-free 3C-SiC International conference

    K. Seki, S. Harada, T. Ujihara

    ECSCRM 2012 

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    Event date: 2012.9.2 - 2012.9.6

    Language:English   Presentation type:Poster presentation  

    Country:Russian Federation  

  271. Effect of surface polarity on the conversion of threading dislocations in solution growth International conference

    Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara

    ECSCRM 2012 

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    Event date: 2012.9.2 - 2012.9.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Russian Federation  

  272. Possibility for elimination of dislocations in SiC crystal: conversion of threading edge dislocations by solution growth International conference

    S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, C. Zhu, M. Tagawa, T. Ujihara

    ECSCRM 2012 

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    Event date: 2012.9.2 - 2012.9.6

    Language:English   Presentation type:Poster presentation  

    Country:Russian Federation  

  273. Influence of solution flow on step bunching in solution growth of SiC International conference

    C. Zhu, K. Seki, S. Harada, H. Niinomi, M. Tagawa, T. Ujihara

    ECSCRM 2012 

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    Event date: 2012.9.2 - 2012.9.6

    Language:English   Presentation type:Poster presentation  

    Country:Russian Federation  

  274. Reduction of threading screw dislocation density utilizing defect conversion during solution growth of 4H-SiC International conference

    S. Harada, Y. Yamamoto, K. Seki, T. Ujihara

    ECSCRM 2012 

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    Event date: 2012.9.2 - 2012.9.6

    Language:English   Presentation type:Poster presentation  

    Country:Russian Federation  

  275. Anisotropy of Lattice Thermal Conduction in TiO2-x with High Density of Planar Defects by Atomistic Simulations International conference

    Y. Miyauchi, M. Tada, M. Yoshiya, S. Harada, K. Tanaka, H. Yasuda, H. Inui

    The 3rd International Symposium on Advanced Microscopy and Theoretical Calculations (AMTC3) 

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    Event date: 2012.5.9 - 2012.5.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  276. Efficient process for ultrahigh quality 4H-SiC crystal utilizing solution growth on off-axis seed crystal International conference

    Shunta HARADA, Yuji YAMAMOTO, Kazuaki SEKI, Atsushi HORIO, Takato MITSUHASHI, Toru UJIHARA

    Materials research society 2012 spring meeting 

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    Event date: 2012.4.9 - 2012.4.13

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  277. SiC溶液成長における貫通らせん転位低減の促進

    原田 俊太,山本 祐治,関 和明,堀尾 篤史,三橋貴仁,宇治原 徹

    2012年春季 第59回 応用物理学関係連合講演会 

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    Event date: 2012.3.15 - 2012.3.18

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学 早稲田キャンパス   Country:Japan  

  278. Reduction of Defects in SiC by Solution Growth for High Performance Power Device

    Shunta Harada, Yuji Yamamto, Kazuaki Seki, Toru Ujihara Yuta Yamamoto, Shigeo Arai, Jun Yamasaki and Nobuo Tanaka

    Interational symposium on role of electron microscopy in industry  

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    Event date: 2012.1.19 - 2012.1.20

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  279. Formation of Different Polytypes during 4H-SiC Solution Growth International conference

    Shunta Harada, Alexander, Kazuaki Seki, Yuji Yamamoto, Toru Ujihara, Jun Yamasaki, Nobuo Tanaka

    ISETS '11 

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    Event date: 2011.12.9 - 2011.12.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  280. 溶液成長における4H-SiC上での多形変化挙動

    原田俊太,アレキサンダー,関和明,山本祐治,宇治原徹

    第41回結晶成長国内会議(NCCG-41) 

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    Event date: 2011.11.3 - 2011.11.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  281. Polytype transformation path on 4H-SiC during top-seeded solution growth International conference

    Shunta Harada, Alexander, Kazuaki Seki, Yuji Yamamoto, Toru Ujihara

    2011 International Conference on Solid State Devices and Materials (SSDM 2011) 

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    Event date: 2011.9.28 - 2011.9.30

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  282. Direct observation of an ordered arrangement of vacancies and large local thermal vibration in rhenium silicide by Cs corrected STEM International conference

    Shunta Harada, Katsushi Tanaka Kyosuke Kishida, Norihiko L Okamoto, Noriaki Endo, Eiji Okunishi and Haruyuki Inui

    Materials Research Society Fall Meeting 

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    Event date: 2010.11.29 - 2010.12.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  283. 第三元素を添加したマグネリ相酸化チタンの熱電特性 International conference

    原田 俊太,田中 克志,乾 晴行

    日本金属学会 

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    Event date: 2010.9.25 - 2010.9.27

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  284. Crystallographic shear structures and thermal conductivity of some thermoelectric Magnèli phase titanium oxides International conference

    Shunta Harada, Katsushi Tanaka and Haruyuki Inui

    International conference on intergranular and interphase boundaries in materials (iib2010) 

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    Event date: 2010.6.27 - 2010.7.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  285. シアー構造を有するMagnèli相化合物の構造変化と熱電特性 International conference

    原田 俊太,田中 克志,乾 晴行

    日本金属学会 

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    Event date: 2010.3.27 - 2010.3.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:筑波大学   Country:Japan  

  286. Reduction in the thermal conductivity of thermoelectric titanium oxide by introduction of planar defects International conference

    Shunta Harada, Katsushi Tanaka and Haruyuki Inui

    Materials Research Society Fall Meeting 

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    Event date: 2009.11.29 - 2009.12.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  287. HAADF-STEM法によるRe4Si7の結晶構造解析 International conference

    原田 俊太,田中 克志,岸田 恭輔,岡本 範彦,乾 晴行,遠藤 徳明,奥西 栄治

    日本金属学会 

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    Event date: 2009.9.15 - 2009.9.17

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  288. 4H-SiC溶液成長法二段階成長における異種多形の析出抑制 International conference

    村山健太, 原田俊太, 藤栄文博, 劉欣博, 村井良多, 朱燦, 花田賢志, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46)  2017.11.27 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ホテルコンコルド浜松  

  289. Automatic Detection of Dislocation contrasts in Birefringence Image of SiC Wafers Using Variance Filter Method

    Shunta Harada

    SSDM2020  2020.9.29 

  290. 貫通らせん転位が極めて少ない 4H-SiC の溶液成長における多形安定化手法 International conference

    村山健太, 原田俊太, 藤栄文博, 劉欣博, 村井良多, 朱燦, 花田賢志, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第4回講演会  2017.11.1 

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    Venue:名古屋国際会議場  

  291. 溶液法 SiC 基板を用いて作製した MOS キャパシタの評価 International conference

    古庄智明, 川畑直之, 古橋壮之, 渡辺友勝, 渡邊寛, 山川聡, 村山健太, 原田俊太, 宇治原徹

    先進パワー半導体分科会 第4回講演会  2017.11.1 

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    Venue:名古屋国際会議場  

  292. 溶液成長における溶液状態の高速予測と 網羅的探索により最適化した条件での結晶成長 International conference

    村井良多, 村山健太, 原田俊太, 畑佐豪記, 角岡洋介, 林宏益, 朱燦, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第4回講演会  2017.11.1 

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    Venue:名古屋国際会議場  

  293. 気相法AlNウィスカー成長における形状変化メカニズムの解明 International conference

    齊藤廣志, 竹内幸久, 原田俊太, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46)  2017.11.27 

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    Venue:ホテルコンコルド浜松  

  294. 機械学習を活用したSiC溶液成長プロセス・ビュジュアライゼーション International conference

    宇治原徹, 畑佐豪記, 角岡洋介, 村山健太, 原田俊太, 田川美穂

    第46回結晶成長国内会議(JCCG-46)  2017.11.27 

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    Venue:ホテルコンコルド浜松  

  295. 機械学習による結晶成長条件の予測を用いたSiC溶液成長 International conference

    林宏益, 村井良多, 朱燦, 村山健太, 角岡洋介, 畑佐豪記, 原田俊太, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46)  2017.11.27 

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    Venue:ホテルコンコルド浜松  

  296. 機械学習による結晶成長条件の予測を用いたSiC溶液成長 International conference

    林宏益, 村井良多, 朱燦, 村山健太, 角岡洋介, 畑佐豪記, 原田俊太, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46)  2017.11.27 

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    Venue:ホテルコンコルド浜松  

  297. 機械学習による熱流体解析の高速化における予測精度 International conference

    畑佐豪記, 角岡洋介, 村井良多, 村山健太, 朱燦, 原田俊太, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46)  2017.11.27 

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    Venue:ホテルコンコルド浜松  

  298. ラマン分光法による GaN 単結晶における貫通転位の刃状成分の解析 International conference

    小久保信彦, 角岡洋介, 藤榮文博, 大原淳士, 原一都, 恩田正一, 山田永, 清水三聡, 原田俊太, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第4回講演会  2017.11.1 

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    Venue:名古屋国際会議場  

  299. X 線トポグラフィーその場観察による 4H-SiC 積層欠陥挙動の窒素濃度依存性評価 International conference

    藤榮文博, 原田俊太, 周防裕政, 加藤智久, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第4回講演会  2017.11.1 

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    Venue:名古屋国際会議場  

  300. Two-Step Sic Solution Growth with Extremely Low-Dislocation-Density 4h-SiC Crystal for Suppression of Polytype Transformation

    K. Murayama, S. Harada, F. Fujie, X. Liu, R. Murai, C. Zhu, K. Hanada, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)  2017.9.17 

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  301. Smooth Li Electrodeposition on Single Crystal Cu Current Collectors

    K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara

    The Electrochemical Society (232nd ECS Meeting)  2017.10.1 

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  302. SiC溶液成長過程における転位伝播方向制御による高品質化 International conference

    原田俊太, 村山健太, 村井良多, 朱燦, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46)  2017.11.27 

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    Venue:ホテルコンコルド浜松  

  303. SiC溶液成長におけるプロセス・インフォマティクス International conference

    宇治原徹, 角岡洋介, 畑佐豪記, 村山健太, 村井良多, 朱燦, 原田俊太, 田川美穂

    第46回結晶成長国内会議(JCCG-46)  2017.11.27 

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    Venue:ホテルコンコルド浜松  

  304. Real-Time Visualization System for Temperature and Fluid Flow Distributions in SiC Solution Growth Using Prediction Model Constructed by Machine Learning

    G. Hatasa, Y. Tsunooka, S. Lee, K. Murayama, R. Murai, S. Harada, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)  2017.9.17 

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  305. High-Speed Prediction Model for Supersaturation and Flow Distribution by CFD Simulation and Machine Learning in SiC Solution Growth

    Y. Tsunooka, N. Kokubo, G. Hatasa, S. Harada, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)  2017.9.17 

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  306. Direct Observation of Stacking Faults Expansion in 4H-SiC at High Temperatures by In Situ X-Ray Topography

    F. Fujie, S. Harada, K. Murayama, K. Hanada, P. Chen, T. Kato, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)  2017.9.17 

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  307. Crystal orientation dependence of precipitate structure of electrodeposited Li metal on Cu current collectors

    K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)  2016.8.7 

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  308. Correlation Between Grown Polytypes and Activity Ratio During Solution Growth of SiC with Multi-Component Solvent International conference

    A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara

    ISPlasma2015 / IC-PLANTS2015  2015.3.26 

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  309. Controlling two-dimensional structuer of DNA-linked Au nanoparticle lattices on supported lipid bilayer

    T. Isogai, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa

    The 22nd International Conference on DNA Computing and Molecular Programming (DNA22)  2016.9.4 

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  310. Control of Macrostep Structure for High-Quality SiC Grown by Liquid Phase Epitaxy

    T. Ujihara, C. Zhu, K. Murayama, S. Harada, M.Tagawa

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)  2016.8.7 

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  311. Chiral bias on circularly polarized laser-induced chiral crystallization from NaClO3 solution containing plasmonic Ag nanoparticles

    H. Niinomi, T. Sugiyama, M. Tagawa, K. Murayama, S. Harada, K. Miyamoto, T. Omatsu, T. Ujihara

    Optical manipulation and its satellite topics (OMC'16)  2016.5.18 

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  312. AlN溶液成長における熱力学計算を用いた成長速度の向上 International conference

    渡邉将太, 永冶仁, 陳鳴宇, 竹内幸久, 青柳健大, 原田俊太, 田川美穂, 宇治原徹

    第64回応用物理学会春季学術講演会  2015.3.11 

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  313. AlN 溶液成長における機械学習を用いた溶液流動の高効率予測 International conference

    小久保 信彦, 角岡 洋介, 原田 俊太, 田川 美穂, 宇治原 徹

    2016年第78回応用物理学会秋季学術講演会  2016.9.13 

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    Venue:朱鷺メッセ  

  314. 4H-SiC中1SSF・PD起因フォトルミネッセンス減衰時間の温度依存性 International conference

    片平 真哉, 市川 義人, 原田 俊太, 木本 恒暢, 加藤 正史

    2017年第64回応用物理学会春季学術講演会  2017.3.14 

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    Venue:パシフィコ横浜  

  315. 4H-SiC 溶液成長における積層欠陥との相互作用により生じる貫通らせん転位の変換挙動 International conference

    加渡 幹尚, 原田 俊太, 関 和明, 大黒 寛典, 楠 一彦, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会  2017.9.5 

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    Venue:福岡国際会議場  

  316. "高熱伝導率AlNウィスカーの高効率合成" International conference

    松本昌樹, 陳鳴宇, 永冶仁, 渡邉将太, 竹内幸久, 原田俊太, 田川美穂, 宇治原徹, 遠藤亮

    公益社団法人日本セラミックス協会 2015年 年会  2015.3.18  公益社団法人日本セラミックス協会

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    Venue:岡山大学 (津島キャンパス)、岡山県  

  317. "超高品質SiC溶液成長法の最前線" International conference

    原田俊太, 宇治原徹

    日本結晶成長学会・バルク成長分科会 第98回研究会「機能性単結晶材料の最新動向--パワーデバイスから光・圧電まで--」  2016.3.4 

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    Venue:早稲田大学 西早稲田キャンパス  

  318. "超格子構造中のDNA被覆金ナノ粒子の融合に向けた粒子間距離収縮とナノ粒子融合" International conference

    鷲見隼人, 磯貝卓巳, 中田咲子, 吉田直矢, 原田俊太, 宇治原徹, 田川美穂

    2016年第63回応用物理学会春季学術講演会  2016.3.19 

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    Venue:東工大大岡山キャンパス  

  319. "脂質二重膜上におけるDNA被覆金ナノ粒子のセルフアセンブリに対するイオンの効果" International conference

    磯貝 卓巳, 赤田 英理, 中田 咲子, 吉田 直矢, 手老 龍吾, 原田 俊太, 宇治原 徹, 田川 美穂

    2015年 第62回応用物理学会春季学術講演会  2015.3.11  (公社)応用物理学会

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    Venue:東海大学 湘南キャンパス、神奈川県  

  320. "溶液法による4H-SiCバルク結晶成長と結晶品質評価" International conference

    楠一彦, 関和明, 岸田豊, 海藤宏志, 森口晃治, 岡田信宏, 大黒寛典, 加渡幹尚, 土井雅喜, 旦野克典, 関章憲, 佐藤和明, 別所毅, 原田俊太, 宇治原徹

    2016年第63回応用物理学会春季学術講演会  2016.3.19 

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    Venue:東工大大岡山キャンパス  

  321. "強磁場スパッタ法によるマンガン窒化物薄膜の作製" International conference

    松本利希, 川口昂彦, 畑野敬史, 原田俊太, 飯田和昌, 宇治原徹, 生田博志

    2016年第63回応用物理学会春季学術講演会  2016.3.19 

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    Venue:東工大大岡山キャンパス  

  322. "可視光励起光電子分光法を用いた半導体超格子における伝導電子のエネルギー分布測定" International conference

    市橋 史朗, 西谷 健治, 董 鑫宇, 川口 昂彦, 桑原 真人, 原田 俊太, 田川 美穂, 伊藤 孝寛, 宇治原 徹

    2015年 第62回応用物理学会春季学術講演会  2015.3.11  (公社)応用物理学会

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    Venue:東海大学 湘南キャンパス、神奈川県  

  323. "可視光励起光電子分光法を用いたGaPにおけるキャリア散乱の温度依存性評価" International conference

    市橋史朗, 川口昂彦, 董キン宇, 井上明人, 桑原真人, 伊藤孝寛, 原田俊太, 田川美穂, 宇治原徹

    2016年第63回応用物理学会春季学術講演会  2016.3.19 

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    Venue:東工大大岡山キャンパス  

  324. "Ultra high quality SiC crystal grown by solution method"

    T. Ujihara, S. Harada, K. Aoyagi, M. Tagawa, T. Sakai

    11th CMCEE  2015.6.14 

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  325. "Thermal conductivity changes in WO3 films caused by hydrogen intercalation/deintercalation"

    A. Nakamura, K. Aoyagi, S. Harada, M. Tagawa, T. Ujihara

    40th International Conference & Exposition on Advanced Ceramics & Composites(ICACC16)  2016.1.24 

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  326. "Temperature Dependence of the Energy Distribution of the Conduction Electrons in GaP Single Crystal"

    Fumiaki Ichihashi, X. Dong, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, M. Tagawa, T. Ujihara

    10th International Symposium on Atomic Level Characterizations for New Materials and Devices'15 (ALC '15)  2015.10.25 

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  327. "Solution Growth of AlN Single Crystal on Sapphire using Multi-Component Solvent Designed by Thermodynamic Calculation"

    S. Harada, M. Nagaya, S. Watanabe, M. Chen, Y. Takeuchi, K. Aoyagi, M. Tagawa, T. Ujihara

    2015 International Conference on Solid State Devices and Materials(SSDM2015)  2015.9.27 

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  328. "SiC溶液法における溶媒への金属添加による炭素溶解度変化の熱力学計算" International conference

    畑佐豪記, 原田俊太, 田川美穂, 村山健太, 加藤智久, 宇治原徹

    2016年第63回応用物理学会春季学術講演会  2016.3.19 

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    Venue:東工大大岡山キャンパス  

  329. "SiC溶液成長における貫通転位変換と成長表面のマクロステップの関係" International conference

    原田 俊太, 肖 世玉, 青柳 健大, 村山 健太, 酒井 武信, 田川 美穂, 宇治原 徹

    2015年 第62回応用物理学会春季学術講演会  2015.3.11  (公社)応用物理学会

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    Venue:東海大学 湘南キャンパス、神奈川県  

  330. "SiC溶液成長における基底面転位と表面モフォロジーの関係" International conference

    堀司紗, 村山健太, 原田俊太, 肖世玉, 田川美穂, 宇治原徹

    2016年第63回応用物理学会春季学術講演会  2016.3.19 

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    Venue:東工大大岡山キャンパス  

  331. "Measurement of Energy Distribution of Conduction Electrons in Superlattice by Visible-Light Photoemission Spectroscopy"

    F. Ichihashi, K. Nishitani, X. Dong, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, M. Tagawa, T. Ujihara

    42nd IEEE Photovoltaic Specialists Conference  2015.6.14 

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  332. "Lipid diffusion and phase transition: Influence on DNA-functionalised nanoparticle adsorbates."

    S. Nakada, E. Akada, T. Isogai, N. Yoshida, R. Tero, S. Harada, T. Ujihara, M. Tagawa

    5th International Colloids Conference  2015.6.21 

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  333. "High-speed solution growth of single crystal AlN from Cr-Co-Al solvent"

    S. Watanabe, M. Nagaya, Y. Takeuchi, K. Aoyagi, S. Harada, M. Tagawa, T. Ujihara

    16th International Conference on Silicon Carbide and Related Materials(ICSCRM2015)  2015.10.4 

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  334. "Distribution of nitrogen doping concentration in 4H-SiC grown by solution method"

    Z. Wang, T. Kawaguchi, K. Murayama, K. Aoyagi, S. Harada, T. Sakai, M. Tagawa, T. Ujihara

    16th International Conference on Silicon Carbide and Related Materials(ICSCRM2015)  2015.10.4 

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  335. "Direct observation of electrons transported in second conduction mini-band of a semiconductor superlattice by visible-light photoemission spectroscopy"

    Fumiaki Ichihashi, Keniji Nishitani, Xinyu Dong, Takahiko, Kawaguchi, Makoto Kuwahara, Takahiro Ito, Shunta Harada, Miho Tagawa, Toru Ujihara

    SPIE Photonics West 2016  2016.2.13 

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  336. "DDAB平面脂質二重膜の相転移過程の直接観察" International conference

    磯貝卓巳, 中田咲子, 赤田英里, 吉田直矢, 鷲見隼人, 手老龍吾, 原田俊太, 宇治原徹, 田川美穂

    2016年第63回応用物理学会春季学術講演会  2016.3.19 

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    Venue:東工大大岡山キャンパス  

  337. "Correlation Between Grown Polytypes and Activity Ratio During Solution Growth of SiC with Multi-Component Solvent"

    Atsushi Horio, Shunta Harada, Daiki Koike, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai, Miho Tagawa, Toru Ujihara

    ISPlasma2015 / IC-PLANTS2015  2015.3.26 

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  338. "Consideration of threading dislocation conversion phenomena during SiC solution growth based on the elastic strain energy"

    S. Harada, S. Xiao, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara

    16th International Conference on Silicon Carbide and Related Materials(ICSCRM2015)  2015.10.4 

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  339. "AlN溶液成長における熱力学計算を用いた成長速度の向上" International conference

    渡邉 将太, 永冶 仁, 陳 鳴宇, 竹内 幸久, 青柳 健大, 原田 俊太, 田川 美穂, 宇治原 徹

    2015年 第62回応用物理学会春季学術講演会  2015.3.11  (公社)応用物理学会

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    Venue:東海大学 湘南キャンパス、神奈川県  

  340. Crystallization of NaClO3 metastable phase from unsaturated mother solution achieved by excitation of plasmonic Au nanoarray International conference

    H. Niinomi, T. Sugiyama, M. Tagawa, T. Ujihara, Y. Mori, S. Harada, K. Murayama, K. Miyamoto, T. Omatsu

    Optics & Photonics Japan 2016  2016.10.30 

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  341. “脂質二重膜の性質が膜上のDNA被覆金ナノ粒子に及ぼす影響” International conference

    中田咲子, 赤田英里, 磯貝卓巳, 吉田直矢, 手老龍吾, 原田俊太, 宇治原徹, 田川美穂

    2015年 第76回応用物理学会秋季学術講演会  2015.9.13 

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    Venue:愛知県, 名古屋国際会議場  

  342. “溶液法により成長したn型4H-SiC結晶のキャリア濃度分布の評価” International conference

    王 振江, 川口昂彦, 村山健太, 青柳健大, 原田俊太, 酒井武信, 宇治原徹

    2015年 第76回応用物理学会秋季学術講演会  2015.9.13 

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    Venue:愛知県, 名古屋国際会議場  

  343. “溶媒を用いたAlNウィスカーの直接窒化法における溶媒組成が生成量に与える影響” International conference

    松本昌樹, 渡邉将太, 竹内幸久, 青柳健大, 原田俊太, 田川美穂, 宇治原徹

    第45回結晶成長国内会議(NCCG-45)  2015.10.19 

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    Venue:北海道大学学術交流会館  

  344. “SiC溶液成長における溶媒不純物の取り込み Impurity incorporation during solution growth of SiC” International conference

    原田俊太, 村山健太, 青柳健大, 酒井武信, 田川美穂, 加藤智久, 宇治原徹

    先進パワー半導体分科会 第2回講演会  2015.11.9 

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    Venue:大阪国際交流センター  

  345. “Agナノ粒子を含んだNaClO3溶液からの円偏光レーザー誘起キラル結晶化におけるエナンチオ選択的増幅” International conference

    新家寛正, 杉山輝樹, 田川美穂, 村山健太, 原田俊太, 丸山美帆子, 森 勇介, 宇治原徹

    2015年 第76回応用物理学会秋季学術講演会  2015.9.13 

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    Venue:愛知県, 名古屋国際会議場  

  346. “Agナノ粒子の光学捕捉により誘起されるNaClO3キラル結晶化過程その場観察” International conference

    新家寛正, 杉山輝樹, 丸山美帆子, 田川美穂, 村山健太, 原田俊太, 宇治原徹, 森勇介

    第45回結晶成長国内会議(NCCG-45)  2015.10.19 

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    Venue:北海道大学学術交流会館  

  347. “4H-SiC溶液成長法Si面厚膜成長による貫通転位密度の低減 Growth of thick 4H-SiC crystal on Si face to reduce threading dislocation density by solution growth” International conference

    村山健太, 堀司紗, 原田俊太, 肖世玉, 青柳健大, 酒井武信, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第2回講演会  2015.11.9 

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    Venue:大阪国際交流センター  

  348. “4H-SiC溶液成長法Si面厚膜化による低転位密度結晶成長の実現” International conference

    村山健太, 原田俊太, 肖世玉, 堀司紗, 青柳健大, 酒井武信, 田川美穂, 宇治原徹

    第45回結晶成長国内会議(NCCG-45)  2015.10.19 

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    Venue:北海道大学学術交流会館  

  349. “4H-SiCのSi面溶液成長における温度分布制御による異種多形混入の抑制” International conference

    堀司紗, 村山健太, 肖世玉, 青柳健大, 原田俊太, 酒井武信, 田川美穂, 宇治原徹

    第45回結晶成長国内会議(NCCG-45)  2015.10.19 

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    Venue:北海道大学学術交流会館  

  350. “2種のDNAを被覆したナノ粒子の構造体の粒子間距離分布” International conference

    吉田直矢, 赤田絵里, 磯貝卓巳, 中田咲子, 原田俊太, 宇治原徹, 田川美穂

    2015年 第76回応用物理学会秋季学術講演会  2015.9.13 

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    Venue:愛知県, 名古屋国際会議場  

  351. X線透過法による SiC 溶液成長の溶液流れと溶液形状のその場観察 International conference

    酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    先進パワー半導体分科会 第3回講演会  2016.11.8 

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    Venue:つくば国際会議場  

  352. X線透過法により溶液形状制御したSiC溶液成長 International conference

    酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    2017年第64回応用物理学会春季学術講演会  2017.3.14 

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    Venue:パシフィコ横浜  

  353. X線その場観察によりメニスカス高さ制御したSiC溶液成長 International conference

    酒井 武信, 秋田 光俊, 加度 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会  2017.9.5 

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    Venue:福岡国際会議場  

  354. X 線透過法による溶液法 SiC 結晶成長の溶液表面形状の経時変化の観察 International conference

    酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    2016年第80回応用物理学会秋季学術講演会  2016.9.13 

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    Venue:朱鷺メッセ  

  355. X 線透過法による溶液法 SiC 結晶成長のその場観察 International conference

    酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    2016年第79回応用物理学会秋季学術講演会  2016.9.13 

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    Venue:朱鷺メッセ  

  356. Ultra high quality SiC crystal grown by solution method

    T. Ujihara, S. Harada, K. Aoyagi, M. Tagawa, T. Sakai

    CMCEE 2015  2015.6.14 

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  357. Two-step growth of SiC solution growth for reduction of dislocations

    K. Murayama, T. Hori, S. Harada, S. Xiao, M.Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)  2016.8.7 

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  358. Trial of Process Informatics in SiC Solution Growth

    T. Ujihara, S. Harada, Y. Tsunooka, N. Kokubo, K. Murayama, R. Murai, M. Tagawa

    The 3rd International Conference on Universal Village (UV 2016)  2016.10.6 

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  359. Threading Screw Dislocation Conversion by Macrosteps during SiC Solution Growth for High-quality Crystals

    S. Harada, K. Murayama, S. Xiao, F. Fujie, T.Sakai, M. Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)  2016.8.7 

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    Language:English   Presentation type:Oral presentation (general)  

  360. The realization of high-quality 4H-SiC C-face grown crystals by controlling the macrosteps formation during solution growth

    S. Y. Xiao, S. Harada, P. L. Chen, K. Murayama, T.Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)  2016.8.7 

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  361. Synthesis of polycrystalline AlN with high thickness by an efficient method International conference

    Pradip Ghosh, Kohei Mizuno, Makoto Hayashi, Yukihisa Takeuchi, Yuichi Aoki, Susumu Sobue, Yasuo Kitou, Jun Hasegawa, Makoto Kobashi, Toru Ujihara

    2015.3.18 

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  362. Solvent design for high-purity SiC solution growth

    S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara

    The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM)  2016.9.25 

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  363. SiC溶液法C面成長における貫通らせん転位の低減 International conference

    劉 欣博, 原田 俊太, 村山 健太, 村井 良多, 肖 世玉, 田川 美穂, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会  2017.9.5 

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    Venue:福岡国際会議場  

  364. SiC溶液成長における貫通転位変換と成長表面のマクロステップの関係 International conference

    原田俊太, 肖世玉, 青柳健大, 村山健太, 酒井武信, 田川美穂, 宇治原徹

    第63回応用物理学会春季学術講演会  2015.3.11 

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  365. SiC溶液成長における機械学習を用いた閉鎖空間の溶液温度・流速分布の予 International conference

    畑佐 豪記, 角岡 洋介, 村山 健太, 村井 良太, 原田 俊太, 田川 美穂, 宇治原 徹

    第40回結晶成長討論会  2017.8.30 

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    Language:Japanese   Presentation type:Poster presentation  

    Venue:浜名湖ロイヤルホテル  

  366. SiC溶液成長における最適条件高速探索手法の提案 International conference

    角岡 洋介, 小久保 信彦, 原田 俊太, 田川 美穂, 宇治原 徹

    2017年第64回応用物理学会春季学術講演会  2017.3.14 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜  

  367. SiCにおける積層欠陥拡張・収縮挙動の高温その場観察 International conference

    藤榮 文博, 原田 俊太, 花田 賢志, 村山 健太, 田川 美穂, 加藤 智久, 宇治原 徹

    日本金属学会 2017年秋期講演会  2017.9.6 

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    Venue:北海道大学  

  368. SiC 溶液成長においてルツボ口径が多結晶析出に及ぼす影響 International conference

    岡島 鎮記, 村井 良多, 村山 健太, 原田 俊太, 田川 美穂, 宇治原 徹

    先進パワー半導体分科会 第3回講演会  2016.11.8 

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    Venue:つくば国際会議場  

  369. Reduction of all types of dislocation in 4H-SiC crystal by two-step solution growth

    K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara

    The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM)  2016.9.25 

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  370. Prediction of solution flow combined with computational fluid dynamics simulation and sparse modeling

    N. Kokubo, Y. Tsunooka, S. Harada, M. Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)  2016.8.7 

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  371. Phase transition process in DDAB supported lipid bilayer

    T. Isogai, S. Nakada, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)  2016.8.7 

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  372. Optically induced crystallization of NaClO3 metastable phase on plasmonic gold nanostructures immersed in unsaturated mother solution International conference

    H. Niinomi, T. Sugiyama, M. Tagawa, T. Ujihara, Y. Mori, S. Harada, K. Murayama, K. Miyamoto, T. Omatsu

    Institute for Global Prominent Research Kickoff Symposium  2016.11.14 

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  373. n 型 4H-SiC 中 SSF 起因フォトルミネッセンスの時間分解測定 International conference

    加藤 正史, 片平 真哉, 市川 義人, 市村 正也, 原田 俊太

    2016年第82回応用物理学会秋季学術講演会  2016.9.13 

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    Venue:朱鷺メッセ  

  374. Morphology of AlN whiskers grown by reacting N2 gas and Al vapor

    M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)  2016.8.7 

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  375. Measurement of Energy Distribution of Conduction Electrons in Superlattice by Visible-Light Photoemission Spectroscopy

    F. Ichihashi, K. Nishitani, X. Dong, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, M. Tagawa, T. Ujihara

    42nd IEEE Photovoltaic Specialists Conference  2015.6.14 

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  376. Li挿入によるWO3薄膜の熱伝導率の変化 International conference

    小林 竜大, 中村 彩乃, 原田 俊太, 田川 美穂, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会  2017.9.5 

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    Venue:福岡国際会議場  

  377. Lipid diffusion and phase transition: Influence on DNA-functionalised nanoparticle adsorbates

    S. Nakada, E. Akada, T. Isogai, N. Yoshida, R. Tero, S. Harada, T. Ujihara, M. Tagawa

    5th International Colloids Conference  2015.6.21 

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  378. Investigation of high-temperature annealing process ofsputtered AlN films International conference

    S. Xiao, Y. Liu, R. Suzuki, H. Miyake, K. Hiramatsu, S. Harada, T. Ujihara

    2017.9.5 

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  379. In-situ observation during solution growth of SiC by X-ray transmission method

    T. Sakai, M. Kado, H. Daikoku, S. Harada, T. Ujihara

    The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM)  2016.9.25 

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  380. Hydrogen-Induced Thermal Conductivity Change across Metal-Insulator Transition in Amorphous WO3 Film

    A. Nakamura, S. Harada, M. Tagawa, T. Ujihara

    2017 MRS Spring Meeting  2017.4.17 

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  381. High-Quality SiC Solution Growth Using Dislocation Conversion on C Face

    S. Xiao, S. Harada, X. Liu, K. Murayama, R. Murai, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)  2017.9.17 

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  382. Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth

    T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara

    The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM)  2016.9.25 

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  383. Formation Mechanism of AlN Whiskers by Reacting N2 Gas and Al Vapor

    M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara

    Nucleation and Growth Research Conference (NGRC 2016)  2016.9.27 

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  384. Evaluation of 2-Inch Wafer by Solution Growth Method Using Synchrotron X-Ray Topography

    K. Seki, K. Kusunoki, Y. Kishida, H. Kaido, K. Moriguchi, M. Kado, H. Daikoku, T. Shirai, M. Akita, A. Seki, H. Saito, S. Harada, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)  2017.9.17 

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  385. Effect of Magnesium Ion Concentration on the Two-Dimensional Structure of DNA-Functionalized Nanoparticles on Supported Lipid Bilayer International conference

    Takumi Isogai, Eri Akada, Sakiko Nakada, Naoya Yoshida, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa

    2015.6.22 

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  386. Effect of Crystal Shape on Solution Flow and Surface Morphology in Solution Growth of SiC

    D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S.Harada, M. Tagawa, T. Sakai, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)  2016.8.7 

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  387. Effect of Crystal Orientation of Cu Current Collector on Morphology of Li Electrodeposition

    K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara

    Nucleation and Growth Research Conference (NGRC 2016)  2016.9.27 

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  388. DNA被覆ナノ粒子によるDDAB脂質二重膜の指組みゲル相形成の促進 International conference

    磯貝 卓巳, 鷲見 隼人, 手老 龍吾, 原田 俊太, 宇治原 徹, 田川 美

    2017年第78回応用物理学会秋季学術講演会  2017.9.5 

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    Venue:福岡国際会議場  

  389. DNA修飾ナノ粒子超格子を前駆体としたウルフ多面体型コロイド結晶の形成 International conference

    鷲見 隼人, 磯貝 卓巳, 吉田 直矢, 原田 俊太, 宇治原 徹, 田川 美穂

    2017年第64回応用物理学会春季学術講演会  2017.3.14 

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    Venue:パシフィコ横浜  

  390. “脂質二重膜上のDNA被覆ナノ粒子の2次元配列に及ぼすマグネシウムおよび脂質膜形状の影響” International conference

    磯貝卓巳, 赤田英里, 中田咲子, 吉田直矢, 手老龍吾, 原田俊太, 宇治原徹, 田川美穂

    第45回結晶成長国内会議(NCCG-45)  2015.10.19 

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    Venue:北海道大学学術交流会館  

  391. 高熱伝導率AlNウィスカーの高効率合成 International conference

    松本昌樹, 陳鳴宇, 永冶仁, 渡邉将太, 竹内幸久, 原田俊太, 田川美穂, 宇治原徹, 遠藤亮

    公益社団法人日本セラミックス協会 2015年 年会  2015.3.18 

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  392. 金属 Li 負極における Cu 集電体の結晶方位と析出形状の関係 International conference

    石川 晃平, 伊藤 靖仁, 原田 俊太, 田川 美穂, 宇治原 徹

    第57回電池討論会  2016.11.29 

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    Venue:幕張メッセ国際会議場  

  393. 酸化タングステンの酸化還元による可逆的熱伝導率制御 International conference

    原田 俊太, 弓削 勇輔, 田川 美穂, 宇治原徹

    2017年第64回応用物理学会春季学術講演会  2017.3.14 

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    Venue:パシフィコ横浜  

  394. 透過電子顕微鏡による窒素添加 SiC 積層欠陥の高温その場観察 International conference

    陳 鵬磊, 原田 俊太, 荒井 重勇, 藤榮 文博, 肖 世玉, 加藤 智久, 田川 美穂, 宇治原 徹

    先進パワー半導体分科会 第3回講演会  2016.11.8 

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    Venue:つくば国際会議場  

  395. 脂質二重膜上におけるDNA被覆金ナノ粒子のセルフアセンブリに対するイオンの効果 International conference

    磯貝卓巳, 赤田英理, 中田咲子, 吉田直矢, 手老龍吾, 原田俊太, 宇治原徹, 田川美穂

    第65回応用物理学会春季学術講演会  2015.3.11 

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  396. 窒素添加した 4H-SiC における積層欠陥拡張・収縮挙動の高温その場観察 International conference

    藤榮 文博, 原田 俊太, 村山 健太, 花田 賢志, 陳 鵬磊, 田川 美穂, 加藤 智久, 宇治原 徹

    先進パワー半導体分科会 第3回講演会  2016.11.8 

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    Venue:つくば国際会議場  

  397. 溶液成長法二段階成長による SiC 結晶内の欠陥密度の低減 International conference

    村山 健太, 堀 司紗, 原田 俊太, 田川 美穂, 宇治原 徹

    先進パワー半導体分科会 第3回講演会  2016.11.8 

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    Venue:つくば国際会議場  

  398. 溶液成長SiC基板上に作製した酸化膜の評価 International conference

    古庄 智明, 川畑 直之, 古橋 壮之, 渡辺 友勝, 渡邊 寛, 山川 聡, 村山 健太, 原田 俊太, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会  2017.9.5 

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    Venue:福岡国際会議場  

  399. 水素挿入・脱離によるWO3薄膜の熱伝導率制御 International conference

    中村 彩乃, 小林 竜太, 原田 俊太, 田川 美穂, 宇治原 徹

    2017年第64回応用物理学会春季学術講演会  2017.3.14 

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    Venue:パシフィコ横浜  

  400. 機械学習を用いた溶液成長における過飽和度分布の予測 International conference

    角岡 洋介, 小久保 信彦, 原田 俊太, 田川 美穂, 宇治原 徹

    2016年第81回応用物理学会秋季学術講演会  2016.9.13 

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    Venue:朱鷺メッセ  

  401. 機械学習を用いたSiC結晶成長実験条件の最適化 International conference

    村井 良多, 畑佐 豪記, 角岡 洋介, 林 宏益, 村山 健太, 朱 燦, 原田 俊太, 田川 美穂, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会  2017.9.5 

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    Venue:福岡国際会議場  

  402. 後方反射X線トポグラフィによる4H-SiC積層欠陥拡張挙動のその場観察 International conference

    藤榮 文博, 原田 俊太, 村山 健太, 花田 賢志, 陳鵬磊, 加藤 智久, 田川 美穂, 宇治原 徹

    2017年第64回応用物理学会春季学術講演会  2017.3.14 

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    Venue:パシフィコ横浜  

  403. 塩素酸ナトリウム水溶液中の銀ナノ粒子円偏光光学捕捉により誘起されるキラル結晶化におけるキラリティの偏り International conference

    新家 寛正, 杉山 輝樹, 田川 美穂, 村山 健太, 原田 俊太, 宇治原 徹

    日本地球惑星科学連合2016年大会  2016.5.22 

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    Venue:幕張メッセ  

  404. 単結晶Cu集電体を用いた金属Li負極の不均一析出抑制 International conference

    石川 晃平, 原田 俊太, 田川 美穂, 宇治原 徹

    日本金属学会 2017年秋期講演会  2017.9.6 

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    Venue:北海道大学  

  405. 半導体伝導帯構造を明らかにする可視光電子光電子分光法の提案 International conference

    宇治原 徹, 市橋 史朗, 董 キン宇, 井上 明人, 川口 昂彦, 桑原 真人, 伊藤 孝寛, 原田 俊太, 田川 美穂

    2016年真空・表面科学合同講演会 第 36 回表面科学学術講演会 第 57 回真空に関する連合講演会  2016.11.29 

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    Venue:名古屋国際会議場  

  406. “金属絶縁体転移に伴う WO3薄膜の熱伝導率変化” International conference

    中村彩乃, 青柳健大, 原田俊太, 田川美穂, 宇治原徹

    公益社団法人日本セラミックス協会 第 28 回秋季シンポジウム  2015.9.16 

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    Venue:富山県, 富山大学(五福キャンパス)  

▼display all

Works 2

  1. 日刊工業新聞30面 “拓く研究人”

    2015.9

  2. 日刊工業新聞30面 “拓く研究人”

    2015.9

Research Project for Joint Research, Competitive Funding, etc. 17

  1. 強化学習を利用した素形材製造プロセスの自動化

    2021.04 - 2022.03

    永井素形材融合分野奨励金 

  2. SiC積層欠陥制御によるパワーデバイス特性劣化の抑制

    2019.04 - 2020.03

    研究助成金 

      More details

    Grant type:Competitive

  3. 酸化物結晶の周期構造制御による熱伝導制御材料の創製

    2018.09 - 2019.08

    研究助成 

      More details

    Grant type:Competitive

  4. 自然超格子の構造変化を利用した熱伝導制御材料の創製

    2018.04 - 2019.03

    研究助成 

      More details

    Grant type:Competitive

  5. 偏光顕微鏡観察と深層学習によるSiC結晶中の転位の自動識別

    2017.12 - 2018.12

    研究助成金 

      More details

    Grant type:Competitive

  6. 機械学習による複屈折像における結晶欠陥の自動識別

    2017.06 - 2018.06

    研究助成金 

      More details

    Grant type:Competitive

  7. 複屈折イメージングによる窒化ガリウム結晶中の転位の自動識別

    2017.04 - 2018.03

    研究助成金 

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    Grant type:Competitive

  8. ナノ構造制御による熱スイッチング材料の創製

    2016.01 - 2016.12

    研究助成金 

      More details

    Grant type:Competitive

  9. 多元系溶媒を用いたSiC溶液成長における活量比による多形制御

    2016.01

    出版助成 

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    Grant type:Competitive

  10. 溶液成長過程における貫通転位変換現象の弾性論的考察

    2015.10

    海外派遣援助 

      More details

    Grant type:Competitive

  11. 積層欠陥を利用したバルク二次元伝導熱電半導体の実現

    2015.01 - 2015.12

    研究助成金 

      More details

    Grant type:Competitive

  12. 溶液成長過程におけるらせん転位変換による高品質結晶成長メカニズム

    2014.08

    海外派遣援助 

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    Grant type:Competitive

  13. シリコンカーバイト溶液成長における欠陥変換挙動

    2013.08

    海外派遣援助 

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    Grant type:Competitive

  14. 厚膜化によるらせん転位フリーSiC結晶成長

    2012.12 - 2013.07

    研究成果最適展開支援プログラム(A-STEP) 

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    Grant type:Competitive

  15. 積層欠陥を用いたバルク量子井戸型熱電半導体の作製

    2012.04 - 2013.03

    研究助成金 

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    Grant type:Competitive

  16. 微傾斜種結晶を用いた高品質SiC溶液成長

    2012.04 - 2013.03

    研究助成金 

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    Grant type:Competitive

  17. SiCパワーデバイスにおける通電劣化抑制法の開発

    研究助成金 

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KAKENHI (Grants-in-Aid for Scientific Research) 10

  1. 深層視覚運動学習による単結晶育成自動化の方法論の確立とその実証

    Grant number:21H01681  2021.04 - 2024.03

    原田 俊太

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    Authorship:Principal investigator 

    Grant amount:\18070000 ( Direct Cost: \13900000 、 Indirect Cost:\4170000 )

  2. Thermal switching device based on thermal properties change by intercalation

    Grant number:20K21081  2020.07 - 2022.03

    Grant-in-Aid for Challenging Research (Exploratory)

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    Authorship:Coinvestigator(s) 

  3. Materials science of multi-morphism in oxides and singular structural properties

    Grant number:18H01733  2018.04 - 2021.03

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    Authorship:Principal investigator 

    Grant amount:\17550000 ( Direct Cost: \13500000 、 Indirect Cost:\4050000 )

  4. Method of Crystal Growth Informatics

    Grant number:18H03839  2018.04 - 2021.03

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    Authorship:Coinvestigator(s) 

  5. Active control of stacking fault in bulk SiC crystal

    Grant number:17H05331  2017.04 - 2019.03

    Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

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    Authorship:Principal investigator 

    Grant amount:\4030000 ( Direct Cost: \3100000 、 Indirect Cost:\930000 )

  6. In-situ observation of threading dislocation conversion in high-quality SiC growth

    Grant number:26246019  2014.04 - 2017.03

    Ujihara Toru

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    Authorship:Coinvestigator(s) 

    Silicon carbide technology which can overcome the performance of silicon power devices is being developed in the world. However, many types of defect (threading dislocations, stacking faults, basal-plane dislocations) still remain in commercial SiC wafers. Thus, the reduction of them is a key to increase its reliability and performance. In this study, we developed new system for in-situ observation of growth surface and in-situ X-ray topography and evaluated the behaviors of defetcs in SiC at high temperatures.

  7. High-quality and Low-resistant SiC crystal

    Grant number:25249034  2013.04 - 2017.03

    Kamei Kazuhito

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    Authorship:Coinvestigator(s) 

    SiC is expected to be a semiconductor material for next-generation power devices. Reducing a electrical loss, it is necessary to decrease the electrical resistivity of semiconductor materials. In SiC, a doping impurities are nitrogen for n-type and aluminum for p-type. However, highly doping in SiC induces stacking faults. In this study, we developed the doping control in SiC solution growth which is a good method for high-quality SiC crystal. We estimated a modulate doping concentration avoiding the induction stacking faults. And, we made clear the mechanism of doping of nitrogen.

  8. Realization of quantum well structure in bulk thermoelectric semiconductor by control of the formation of stacking fault in SiC

    Grant number:24686078  2012.04 - 2015.03

    HARADA Shunta

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    Authorship:Principal investigator 

    Grant amount:\26000000 ( Direct Cost: \20000000 、 Indirect Cost:\6000000 )

    Thermoelectric materials which convert heat energy to electric energy attract great attention due to the efficient use of limited energy sources. Recently, Drastic improvement in the thermoelectric properties were expected by the quantum well structures. In the present study, by controlling the stacking fault formation in SiC crystal, we attempted to form the quantum well structure in the bulk semiconductors.
    By the addition of nitrogen in SiC, cubic-type stacking faults are introduced to the hexagonal SiC crystal. The stacking fault would be quantum-well because the band-gap energy of cubic SiC is smaller than that of hexagonal SiC.

  9. 溶液成長法によるSiC結晶の欠陥自己修復メカニズムの解明

    Grant number:23860025  2011.08 - 2013.03

    原田 俊太

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    Authorship:Principal investigator 

    Grant amount:\3250000 ( Direct Cost: \2500000 、 Indirect Cost:\750000 )

    低損失、高耐圧のSiCパワーデバイス実現の『カギ』を握るのが、SiC単結晶の高品質化である。現在、市販されているSiC単結晶には、高密度の欠陥が含まれている。特に貫通らせん転位(TSD)は、電流のリーク源となり、デバイス特性、信頼性の大幅な低下をもたらす事が知られている。本研究では、溶液成長法における、貫通らせん転位の低減に関する研究を実施した。
    本年度は、溶液法によって成長したSiC結晶中の欠陥のキャラクタリゼーションおよび、欠陥低減メカニズムに関する研究を実施した。
    X線トポグラフィー法および、透過電子顕微鏡法を複合的に用いて、SiC結晶中の欠陥評価を行った結果、溶液成長中に貫通らせん転位が基底面の欠陥に変換していることが明らかとなった。また、貫通らせん転位は、積層欠陥をはさんで複数の部分転位に分解していた。
    表面モフォロジーと貫通らせん転位の変換率を比較すると、ステップバンチングによって生じたマクロステップのステップフロー成長によって、効果的に貫通らせん転位が変換することが明らかとなった。また、微傾斜を設けた種結晶を用いて、ステップフロー成長をエンハンスすることによって、貫通らせん転位の変換率を飛躍的に向上させることに成功した。さらに、種結晶の傾斜角度を変化させることによって、貫通らせん転位の変換率を99%以上にまで向上させ、溶液成長法による、貫通らせん転位フリーの、高品質SiC結晶成長の可能性を示した。

  10. Realization of non-dislocation SiC crystal

    Grant number:23246004  2011.04 - 2014.03

    UJIHARA Toru

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    Authorship:Coinvestigator(s) 

    The improvement of substrate quality is important to apply SiC materials to high-performance power device. The purpose of this study is to achieve "ultra-high quality" crystal grown by solution growth method. In our research, it has been revealed that threading dislocations are converted to other defects in the basal planes by macrosteps advancing and the converted defects are swept from the crystal during growth process. In addition, the converted ratio depends on the height and microstructure of the macrosteps. Utilizing this conversion phenomenon, we have demonstrated the ultra-high quality growth of SiC.

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Industrial property rights 15

  1. 炭化ケイ素の結晶の製造方法及び結晶製造装置

    宇治原徹,原田俊太,古池大輝,梅崎智典

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    Applicant:国立大学法人名古屋大学,セントラル硝子

    Application no:2014-184978  Date applied:2014.9.11

    Announcement no:2016-056071  Date announced:2016.4.21

    Country of applicant:1  

  2. 太陽光で励起された電子のエネルギーの測定方法と測定装置

    宇治原徹,桑原真人,原田俊太,志村大樹,市橋史朗

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    Applicant:国立大学法人名古屋大学

    Application no:2014-554458  Date applied:2013.12.24

    Patent/Registration no:特許第5991556号  Date registered:2016.8.26 

    Country of applicant:1  

  3. 3C-SiC単結晶およびその製造方法

    宇治原 徹, 原田 俊太, 関 和明

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    Applicant:名古屋大学

    Application no:2014-532782  Date applied:2013.8.26

    Country of applicant:1  

  4. 3C-SiC単結晶およびその製造方法

    宇治原 徹, 原田 俊太, 関 和明

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    Applicant:名古屋大学

    Application no:PCT/JP2013/005016  Date applied:2013.8.26

    Announcement no:WO 2014/034080 

    Country of applicant:1  

  5. 結晶製造装置、SiC単結晶の製造方法およびSiC単結晶

    宇治原 徹, 原田 俊太, 関 和明, 朱 燦, 長岡 美津也

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    Applicant:名古屋大学

    Application no:PCT/JP2013/005017  Date applied:2013.8.26

    Announcement no:WO 2014/034081 

    Country of applicant:1  

  6. 結晶製造装置、SiC単結晶の製造方法およびSiC単結晶

    宇治原 徹, 原田 俊太, 関 和明, 朱 燦, 長岡 美津也

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    Applicant:名古屋大学

    Application no:14/630,607  Date applied:2013.8.26

    Country of applicant:1  

  7. 結晶製造装置、SiC単結晶の製造方法およびSiC単結晶

    宇治原 徹, 原田 俊太, 関 和明, 朱 燦, 長岡 美津也

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    Applicant:名古屋大学

    Application no:13832154.2  Date applied:2013.8.26

    Announcement no:2889397 

    Country of applicant:1  

  8. SiC結晶の成長方法

    柴田顕次、市川慎一郎、宇治原徹、原田俊太、関和明

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    Applicant:株式会社豊田自動織機

    Application no:TW101147316  Date applied:2012.12.14

    Announcement no:WO2013/088947 

    Country of applicant:1  

  9. SiC結晶の結晶成長方法およびSiC結晶基板

    柴田顕次、市川慎一郎、宇治原徹、原田俊太、関和明

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    Applicant:株式会社豊田自動織機

    Application no:TW101147322  Date applied:2012.12.14

    Announcement no:WO2013/088948 

    Country of applicant:1  

  10. SiC単結晶の製造方法

    宇治原徹,原田俊太,朱燦

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    Applicant:国立大学法人名古屋大学

    Application no:2012-185975  Date applied:2012.8.26

    Announcement no:2014-043369  Date announced:2014.3.13

    Patent/Registration no:特許第6069758号  Date registered:2017.1.13 

    Country of applicant:1  

  11. SiC単結晶の製造方法

    宇治原徹,原田俊太,朱燦

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    Applicant:国立大学法人名古屋大学

    Application no:2012-185973  Date applied:2012.8.26

    Announcement no:2014-043367  Date announced:2014.3.13

    Patent/Registration no:特許第5975482号  Date registered:2016.7.29 

    Country of applicant:1  

  12. SiC結晶の成長方法

    柴田顕次、市川慎一郎、宇治原徹、原田俊太、関和明

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    Application no:2011-275588(JP)  Date applied:2011.12.16

    Announcement no:2013‐124214 

    Country of applicant:1  

  13. SiC結晶の結晶成長方法およびSiC結晶基板

    柴田顕次、市川慎一郎、宇治原徹、原田俊太、関和明

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    Application no:2011-275589(JP)  Date applied:2011.12.16

    Announcement no:2013‐124215 

    Country of applicant:1  

  14. SiC結晶の成長方法およびSiC結晶の製造装置

    宇治原徹,原田俊太,関和明,柴田顕次,市川慎一郎,今岡功

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    Applicant:豊田自動織機,国立大学法人名古屋大学

    Application no:2011-275588  Date applied:2011.12.16

    Announcement no:2013-124214  Date announced:2013.6.24

    Patent/Registration no:特許第5936344号  Date registered:2016.5.20 

    Country of applicant:1  

  15. SiC結晶の成長方法、SiC結晶の製造装置、および結晶基板

    宇治原徹,原田俊太,関和明,柴田顕次,市川慎一郎

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    Applicant:豊田自動織機,国立大学法人名古屋大学

    Application no:2011-275587  Date applied:2011.12.16

    Announcement no:2013-124213  Date announced:2013.6.24

    Patent/Registration no:特許第5936343号  Date registered:2016.5.20 

    Country of applicant:1  

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Teaching Experience (On-campus) 32

  1. 先端プロセス工学セミナー

    2020

  2. 学生実験2

    2020

  3. 学生実験1

    2020

  4. 力学II

    2020

  5. 材料工学実験第1

    2018

  6. 数値解析演習

    2018

  7. 電磁気学II

    2018

  8. 力学II

    2017

  9. 数値解析演習

    2017

  10. 材料工学基礎実験

    2017

  11. 材料工学実験第1

    2017

  12. 材料工学実験第1

    2016

  13. 物理工学科概論

    2016

  14. 材料工学基礎実験

    2016

  15. 材料工学実験第1

    2015

  16. 材料工学基礎実験

    2015

  17. 材料工学実験第2

    2015

  18. 物理工学科概論

    2015

  19. 物理工学科概論

    2014

  20. 材料工学実験第2

    2014

  21. 材料工学基礎実験

    2014

  22. 材料工学実験第1

    2014

  23. 物理工学科概論

    2013

  24. 材料工学実験第2

    2013

  25. 材料工学実験第1

    2013

  26. 材料工学基礎実験

    2013

  27. 材料工学実験第2

    2012

  28. 材料工学実験第1

    2012

  29. 材料工学基礎実験

    2012

  30. 物理工学科概論

    2012

  31. 物理工学科概論

    2011

  32. 材料工学実験第1

    2011

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Teaching Experience (Off-campus) 1

  1. 材料工学基礎実験

    Nagoya University)

 

Social Contribution 1

  1. 基盤産業支援セミナー

    Lecturer

    あいち産業科学技術総合センター  「結晶の分析・評価」 ~シンクロトロン光によって見えるもの~  2017.12

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    Audience: Researchesrs, Company, Governmental agency

    Type:Seminar, workshop