Updated on 2025/03/19

写真a

 
Katsunori Makihara
 
Organization
Graduate School of Engineering Electronics 2 Professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Electrical Engineering, Electronics, and Information Engineering
Title
Professor
Contact information
メールアドレス
External link

Degree 1

  1. 博士(工学) ( 2006.3   広島大学 ) 

Research Interests 2

  1. Si系量子ドット

  2. 磁性ナノドット

Current Research Project and SDGs 2

  1. 半導体ナノ構造の形成と量子物性制御に関する研究

  2. 磁性ナノ構造の形成と超低消費電力機能メモリに関する研究

Research History 6

  1. Innovations for High Performance Microelectronics   客員研究員

    2019.5 - 2019.8

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    Country:Germany

  2. Nagoya University   Graduate School of Engineering Electronics 2   Associate professor

    2017.4

  3. 名古屋大学大学院工学研究科   准教授

    2014.4

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    Country:Japan

  4. 名古屋大学大学院工学研究科   助教

    2010.12 - 2014.3

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    Country:Japan

  5. 広島大学大学院先端物質科学研究科   研究員

    2009.4 - 2010.11

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    Country:Japan

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Education 1

  1. Hiroshima University

    2003.4 - 2006.3

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    Country: Japan

Professional Memberships 4

  1. シリコンテクノロジー分科会   表面・界面・シリコン材料研究委員会 幹事

    2017.1

  2. 応用物理学会 東海支部   幹事

  3. 日本表面真空学会 中部支部   幹事

  4. 薄膜・表面物理分科会   会員

Committee Memberships 9

  1.   組織委員会および実行委員会 庶務  

    2022   

  2.   実行委員会 庶務  

    2019   

  3.   実行委員 庶務  

    2019   

  4.   実行委員  

    2018   

  5.   国際会議プログラム委員  

    2017   

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    Committee type:Other

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Awards 7

  1. ISPlasma2012 Best Presentation Award

    2012.3   ISPlasma2012 Organizing Committee Chair  

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    Country:Japan

  2. 第31回(2011年秋季)応用物理学会講演奨励賞

    2012.3   公益社団法人 応用物理学会  

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    Country:Japan

  3. Award for Encouragement of Research in Materials Science : The Materials Research Society of Japan (MRS-J)

    2008.12   The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008)  

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    Country:Japan

  4. 広島大学学生表彰

    2006.3   広島大学  

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    Country:Japan

  5. Award for Encouragement of Research of Materials Science

    2005.12   Materials Research Society of Japan  

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    Country:Japan

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Papers 170

  1. Crystalline phase transition of ultra-thin Ni-silicide film during SiH<sub>4</sub> exposure

    Tanida, S; Taoka, N; Makihara, K

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 64 ( 2 )   2025.2

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  

    Formation of an ultrathin Ni-silicide on SiO2 by exposing a Ni ultrathin film to pure SiH4 gas at 280 °C was tried. During the formation, impacts of Ni-film thickness and SiH4 exposure time on silicidation reaction were investigated. It was found that surface roughness depends on the Ni-film thickness, and that, in the case of the 3 nm thick Ni-film, a smooth surface was obtained even after the SiH4 exposure. Also, it was found that the silicidation reaction is limited between 3 and 5 min, and that, after the SiH4 exposure time more than 5 min, crystalline phase transition from the Si-rich Ni-silicide to the Ni-rich Ni-silicide and formation of Si-rich Ni-silicide with poor crystallinity were confirmed. Consequently, we successfully formed the ultra-thin Ni-silicide film with the smooth surface even at the low temperature.

    DOI: 10.35848/1347-4065/adaafc

    Web of Science

    Scopus

  2. Study of dot size effect on electron emission from Si-QDs multiple-stacked structures

    Baek, J; Makihara, K; Obayashi, S; Imai, Y; Taoka, N; Miyazaki, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 9 )   2024.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  

    We have fabricated diodes with different sized Si quantum dots (QDs) by precisely controlled low-pressure chemical vapor deposition using a pure SiH4 gas and studied the effect of dot size on field electron emission properties of their multiple‒stacked structures. At an applied bias of ∼9 V, the emission current of ∼4.0 nm height dot‒stacks is two orders of magnitude higher than that of ∼5.9 nm height dot‒stacks. These results can be interpreted in terms of an increase in the number of electrons with higher kinetic energy due to the increase in discrete energy levels associated with the reduction in the dot size, which suppresses electron scattering within the dot, and the electric field concentration resulting from the decrease in the curvature of the dot.

    DOI: 10.35848/1347-4065/ad759b

    Web of Science

    Scopus

  3. Electron emission from alignment-controlled multiple stacks of SiGe nanodots embedded in Si structures

    Makihara, K; Yamamoto, Y; Yagi, H; Li, LR; Taoka, N; Tillack, B; Miyazaki, S

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 174   2024.5

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Materials Science in Semiconductor Processing  

    We fabricated a vertically aligned and staggered structure comprising 20–stacking layers of SiGe–nanodots (NDs) embedded in Si via reduced–pressure chemical vapor deposition and investigated their electron emission properties. The SiGe–NDs with a 35% Ge content were deposited using SiH4–GeH4, while Si spacers were deposited using SiH4 or SiH2Cl2 to control a 3D–alignment of staggered or dot–on–dot structure, respectively. Top Au electrodes with 5–nm–thick SiO2 and bottom Al contact were fabricated for electron emission measurements. After applying a bias of −3.8 V to the bottom Al–electrode with respect to the grounded top Au–electrode, electron emission was observed from the staggered SiGe–ND stack, which was slightly lower than that of the vertically–aligned NDs. In addition, we also observed a reduction in sample current with the formation of the staggered SiGe–ND stack. These results indicate that aligning SiGe–NDs in a staggered configuration suppresses leakage current and improves electron emission efficiency.

    DOI: 10.1016/j.mssp.2024.108227

    Web of Science

    Scopus

  4. Self-assembling mechanism of Si-QDs on thermally grown SiO<sub>2</sub>

    Baek, J; Imai, Y; Tsuji, R; Makihara, K; Miyazaki, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 4 )   2024.4

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japanese Journal of Applied Physics  

    The self-assembling formation of Si quantum dots (Si-QDs) on as-grown SiO2 layers was shown by controlling the early stages of low-pressure chemical vapor deposition of SiH4. The QD height and radius distributions assessed by atomic force microscopy and scanning electron microscopy images revealed that the Si-QDs become hemispherical due to them being rate-limited by aggregation, which reduces the surface energy at substrate temperatures above ∼580 °C. Moreover, at temperatures below ∼580 °C, semi-ellipsoidal shaped Si-QDs are formed because the precursor supply is a dominant factor.

    DOI: 10.35848/1347-4065/ad2fe1

    Web of Science

    Scopus

  5. Formation of one-dimensionally self-aligned Si-QDs and their local electron discharging properties

    Imai, Y; Makihara, K; Yamamoto, Y; Wen, WC; Schubert, MA; Baek, J; Tsuji, R; Taoka, N; Ohta, A; Miyazaki, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 4 )   2024.4

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japanese Journal of Applied Physics  

    Self-aligned Si-quantum-dots (Si-QDs) with an areal density as high as ∼1011 cm−2 have been fabricated on ultrathin SiO2 by using a ∼4.5 nm thick poly-Si on insulator (SOI) substrate, and controlling low-pressure CVD using monosilane (SiH4), and followed by thermal oxidation. By controlling the thermal oxidation processes of Si-QDs and the poly-Si layer, we have successfully demonstrated the vertical alignment of Si-QDs, where the Si-QDs are also used as a shadow mask of the underlying poly-Si layer. We also demonstrated in-plane alignment of the one-dimensionally self-aligned Si-QDs on line-patterned SiO2. In addition, from surface potential measurements by using atomic force microscopy/Kelvin probe force microscopy, we confirmed that the initial surface potential change caused by valence electron extraction from the dots to the tip was stably maintained until ∼120 min, implying the quantum confinement effect at discrete energy levels of the upper and lower-QDs.

    DOI: 10.35848/1347-4065/ad38f7

    Web of Science

    Scopus

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MISC 1

  1. Resistive Switching Properties of Si Oxide by Constant Voltage and Constant Current Application

      Vol. 117 ( 101 ) page: 25 - 29   2017.6

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    Language:Japanese  

    CiNii Books

Presentations 689

  1. Fabrication of Impurity Doped Si Quantum Dots with Ge Core for Light Emission Devices Invited International conference

    K. Makihara, and S. Miyazaki

    2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  2. ナノドットによる量子物性制御デバイスの開発 Invited

    牧原 克典、宮崎 誠一

    令和3年度「放射線科学とその応用第186委員会」第38回研究会  2021.5.18 

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    Event date: 2021.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  3. Si-Ge系ナノドットの高密度集積と光・電子物性制御 Invited

    牧原 克典、宮崎 誠一

    阪大CSRN 第二回異分野研究交流会 ~半導体ナノカーボン系~  2020.8.28 

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    Event date: 2020.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  4. Fabrication of Impurity Doped Si Quantum Dots with Ge Core for Light Emission Devices Invited International conference

    K. Makihara, M. Ikeda, and S. Miyazaki

    8th International Symposium on Control of Semiconductor Interfaces 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  5. Formation and Characterization of Si Quantum Dots with Ge Core for Electroluminescent Devices Invited International conference

    Makihara Katsunori, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 

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    Event date: 2019.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

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Research Project for Joint Research, Competitive Funding, etc. 4

  1. 一次元連結磁性合金ナノドットのスピン物性制御と新機能メモリ開発

    2019.7 - 2020.3

    財団法人 立松財団 A1.特別研究助成 

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    Grant type:Competitive

  2. 半導体ナノ構造の金属混晶化精密制御による新機能材料創成

    2013.8 - 2013.12

    ナノテクノロジープラットフォーム 平成25年度 研究設備の試行的利用事業 

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    Grant type:Competitive

  3. 理工農系:サステナブル社会の実現に貢献する自然科学系国際的若手研究者の育成プログラム

    2010.10

    [2] 日本学術振興会 研究者海外派遣基金助成金「組織的な若手研究者等海外派遣プログラム」 

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    Grant type:Competitive

  4. 日本学術振興会 研究者海外派遣基金助成金「組織的な若手研究者等海外派遣プログラム」(広島大学) 理工農系:サステナブル社会の実現に貢献する自然科学系国際的若手研究者の育成プログラム

    2010.10

KAKENHI (Grants-in-Aid for Scientific Research) 12

  1. Si-Ge系スーパーアトムの内部ポテンシャル変調による量子機能材料創成

    Grant number:19H00762  2019.4 - 2023.3

    科学研究費補助金  基盤研究(A)

    牧原克典

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    Authorship:Principal investigator  Grant type:Competitive

  2. ナノドットの超高密度規則配列と電子・スピン結合制御 International coauthorship

    Grant number:18KK0409  2019 - 2021

    科学研究費補助金  国際共同研究加速基金(国際共同研究強化(A))

    牧原克典

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    Authorship:Principal investigator  Grant type:Competitive

  3. 価電子制御シリコン量子ドットのドット間結合制御による熱起電力創出

    Grant number:17K18877  2017.6 - 2019.3

    科学研究費補助金  挑戦的研究(萌芽)

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    Authorship:Principal investigator  Grant type:Competitive

  4. Fe系磁性合金ハイブリッドドット創成によるスピン・電子制御と新機能メモリ応用

    Grant number:16H06083  2016.4 - 2019.3

    科学研究費補助金  若手研究(A)

    牧原 克典

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    Authorship:Principal investigator  Grant type:Competitive

  5. 一次元連結ハイブリッドドットのキャリア輸送・保持制御と高効率発光デバイス創成

    Grant number:25709023  2013.4 - 2015.3

    科学研究費補助金  若手研究(A)

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    Authorship:Principal investigator  Grant type:Competitive

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Industrial property rights 10

  1. 半導体薄膜およびその製造方法

    牧原克典、宮崎誠一、林司

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    Applicant:日新電機株式会社

    Application no:特願2012-041844  Date applied:2012.2

    Country of applicant:Domestic  

  2. 結晶半導体の製造方法およびそれを用いた半導体素子の製造方法

    岡田竜弥、牧原克典、宮崎誠一

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    Applicant:国立大学法人 広島大学

    Application no:特願2009-77922  Date applied:2009.3

    Announcement no:2010-232401 

    Country of applicant:Domestic  

  3. 金属ドットの製造方法およびそれを用いた半導体メモリの製造方法

    牧原克典、宮崎誠一

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    Applicant:国立大学法人 広島大学

    Application no:特願2008-330536  Date applied:2008.12

    Announcement no:2010-153612 

    Country of applicant:Domestic  

  4. 半導体製造装置、ゲルマニウムドットの製造方法およびそれを用いた半導体メモリの製造方法

    牧原克典、宮崎誠一

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    Applicant:国立大学法人 広島大学

    Application no:特願2008-330524  Date applied:2008.12

    Announcement no:2010-153610 

    Country of applicant:Domestic  

  5. 発光素子およびその製造方法

    牧原克典、宮崎誠一、東清一郎

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    Applicant:国立大学法人 広島大学

    Application no:12/212,406(US)  Date applied:2008.9

    Country of applicant:Foreign country  

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Teaching Experience (Off-campus) 1

  1. 電子光科学ゼミナールIV

    2013 Osaka University)

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    Level:Postgraduate 

 

Social Contribution 8

  1. ISPlasma2014/IC-PLANTS2014実行委員

    2013.4 - 2014.3

  2. 第5回薄膜太陽電池セミナー2013

    2013.4 - 2013.12

  3. ICSI-8/ISCSI-VI実行委員

    2012.7 - 2013.6

  4. IC-PLANTS2013実行委員

    2012.4 - 2013.3

  5. SSDM2012実行委員

    2011.12 - 2012.11

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