Updated on 2024/11/05

写真a

 
Katsunori Makihara
 
Organization
Graduate School of Engineering Electronics 2 Professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Electrical Engineering, Electronics, and Information Engineering
Title
Professor

Degree 1

  1. 博士（工学） （ 2006.3   広島大学 ） 

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Research Interests 2

  1. Si系量子ドット

  2. 磁性ナノドット

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Current Research Project and SDGs 2

  1. 半導体ナノ構造の形成と量子物性制御に関する研究

  2. 磁性ナノ構造の形成と超低消費電力機能メモリに関する研究

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Research History 6

  1. Innovations for High Performance Microelectronics   客員研究員

    2019.5 - 2019.8

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    Country：Germany

  2. Nagoya University   Graduate School of Engineering Electronics 2   Associate professor

    2017.4

  3. 名古屋大学大学院工学研究科   准教授

    2014.4

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    Country：Japan

  4. 名古屋大学大学院工学研究科   助教

    2010.12 - 2014.3

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    Country：Japan

  5. 広島大学大学院先端物質科学研究科   研究員

    2009.4 - 2010.11

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    Country：Japan

  6. 日本学術振興会 特別研究員（PD）   研究員

    2006.4 - 2009.3

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    Country：Japan

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Education 1

  1. Hiroshima University

    2003.4 - 2006.3

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    Country： Japan

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Professional Memberships 4

  1. シリコンテクノロジー分科会   表面・界面・シリコン材料研究委員会　幹事

    2017.1

  2. 応用物理学会 東海支部   幹事

  3. 日本表面真空学会　中部支部   幹事

  4. 薄膜・表面物理分科会   会員

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Committee Memberships 9

  1.   組織委員会および実行委員会　庶務  

    2022   

  2.   実行委員会　庶務  

    2019   

  3.   実行委員 庶務  

    2019   

  4.   実行委員  

    2018   

  5.   国際会議プログラム委員  

    2017   

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    Committee type：Other

  6.   現地実行委員  

    2014 - 2016   

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    Committee type：Other

  7.   実行委員会　庶務  

    2013   

  8. Int. Conf. on Plasma Nanotechnology & Science   現地実行委員  

    2011 - 2016   

  9.   実行委員  

    2011 - 2012   

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Awards 7

  1. ISPlasma2012 Best Presentation Award

    2012.3   ISPlasma2012 Organizing Committee Chair  

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    Country：Japan

  2. 第31回（2011年秋季）応用物理学会講演奨励賞

    2012.3   公益社団法人 応用物理学会  

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    Country：Japan

  3. Award for Encouragement of Research in Materials Science : The Materials Research Society of Japan (MRS-J)

    2008.12   The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008)  

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    Country：Japan

  4. 広島大学学生表彰

    2006.3   広島大学  

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    Country：Japan

  5. Award for Encouragement of Research of Materials Science

    2005.12   Materials Research Society of Japan  

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    Country：Japan

  6. 応用物理学会 支部学術講演会発表奨励賞

    2005.10   応用物理学会 中国四国支部  

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    Country：Japan

  7. 2005 IMFEDK Best Student Award

    2005.4   IEEE, The EDS Kansai Chapter  

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    Country：Japan

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Papers 169

  1. Study of dot size effect on electron emission from Si-QDs multiple-stacked structures

    Baek, J; Makihara, K; Obayashi, S; Imai, Y; Taoka, N; Miyazaki, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 9 )   2024.9

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  

    We have fabricated diodes with different sized Si quantum dots (QDs) by precisely controlled low-pressure chemical vapor deposition using a pure SiH4 gas and studied the effect of dot size on field electron emission properties of their multiple‒stacked structures. At an applied bias of ∼9 V, the emission current of ∼4.0 nm height dot‒stacks is two orders of magnitude higher than that of ∼5.9 nm height dot‒stacks. These results can be interpreted in terms of an increase in the number of electrons with higher kinetic energy due to the increase in discrete energy levels associated with the reduction in the dot size, which suppresses electron scattering within the dot, and the electric field concentration resulting from the decrease in the curvature of the dot.

    DOI： 10.35848/1347-4065/ad759b

    Web of Science

    Scopus

  2. Electron emission from alignment-controlled multiple stacks of SiGe nanodots embedded in Si structures

    Makihara, K; Yamamoto, Y; Yagi, H; Li, LR; Taoka, N; Tillack, B; Miyazaki, S

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 174   2024.5

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Materials Science in Semiconductor Processing  

    We fabricated a vertically aligned and staggered structure comprising 20–stacking layers of SiGe–nanodots (NDs) embedded in Si via reduced–pressure chemical vapor deposition and investigated their electron emission properties. The SiGe–NDs with a 35% Ge content were deposited using SiH4–GeH4, while Si spacers were deposited using SiH4 or SiH2Cl2 to control a 3D–alignment of staggered or dot–on–dot structure, respectively. Top Au electrodes with 5–nm–thick SiO2 and bottom Al contact were fabricated for electron emission measurements. After applying a bias of −3.8 V to the bottom Al–electrode with respect to the grounded top Au–electrode, electron emission was observed from the staggered SiGe–ND stack, which was slightly lower than that of the vertically–aligned NDs. In addition, we also observed a reduction in sample current with the formation of the staggered SiGe–ND stack. These results indicate that aligning SiGe–NDs in a staggered configuration suppresses leakage current and improves electron emission efficiency.

    DOI： 10.1016/j.mssp.2024.108227

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    Scopus

  3. Self-assembling mechanism of Si-QDs on thermally grown SiO<sub>2</sub>

    Baek, J; Imai, Y; Tsuji, R; Makihara, K; Miyazaki, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 4 )   2024.4

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    The self-assembling formation of Si quantum dots (Si-QDs) on as-grown SiO2 layers was shown by controlling the early stages of low-pressure chemical vapor deposition of SiH4. The QD height and radius distributions assessed by atomic force microscopy and scanning electron microscopy images revealed that the Si-QDs become hemispherical due to them being rate-limited by aggregation, which reduces the surface energy at substrate temperatures above ∼580 °C. Moreover, at temperatures below ∼580 °C, semi-ellipsoidal shaped Si-QDs are formed because the precursor supply is a dominant factor.

    DOI： 10.35848/1347-4065/ad2fe1

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    Scopus

  4. Formation of one-dimensionally self-aligned Si-QDs and their local electron discharging properties

    Imai, Y; Makihara, K; Yamamoto, Y; Wen, WC; Schubert, MA; Baek, J; Tsuji, R; Taoka, N; Ohta, A; Miyazaki, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 4 )   2024.4

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    Self-aligned Si-quantum-dots (Si-QDs) with an areal density as high as ∼1011 cm−2 have been fabricated on ultrathin SiO2 by using a ∼4.5 nm thick poly-Si on insulator (SOI) substrate, and controlling low-pressure CVD using monosilane (SiH4), and followed by thermal oxidation. By controlling the thermal oxidation processes of Si-QDs and the poly-Si layer, we have successfully demonstrated the vertical alignment of Si-QDs, where the Si-QDs are also used as a shadow mask of the underlying poly-Si layer. We also demonstrated in-plane alignment of the one-dimensionally self-aligned Si-QDs on line-patterned SiO2. In addition, from surface potential measurements by using atomic force microscopy/Kelvin probe force microscopy, we confirmed that the initial surface potential change caused by valence electron extraction from the dots to the tip was stably maintained until ∼120 min, implying the quantum confinement effect at discrete energy levels of the upper and lower-QDs.

    DOI： 10.35848/1347-4065/ad38f7

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  5. Self-assembling formation of Si-QDs on SiO<sub>2</sub> line patterns

    Tsuji, R; Imai, Y; Baek, J; Makihara, K; Miyazaki, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 3 )   2024.3

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    The lateral growth of Si-quantum dots (QDs) on line-patterned SiO2 from the thermal decomposition of pure monosilane (SiH4) has been systematically examined. We confirmed that the Si-QDs diameter in the line direction of the SiO2 patterns has the same growth rate as the SiO2 thin film surface without the line patterns. Moreover, it has been found that in the growth of Si-QDs in the width direction, a surface migration of Si precursors adsorbed from space regions could contribute to dots growth on line-patterned SiO2, which results in an elliptical growth. Furthermore, we have demonstrated a one-dimensional arrangement of highly dense-elliptical shaped Si-QDs with high uniformity in size by controlling line width, CVD time, and temperature.

    DOI： 10.35848/1347-4065/ad1ca0

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  6. Formation of ultra-thin nickel silicide on SiO<sub>2</sub> using Si/Ni/Si structures for oxidation control

    Kimura, K; Taoka, N; Ohta, A; Makihara, K; Miyazaki, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 2 )   2024.2

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    We have demonstrated the formation of ultrathin Ni silicide on SiO2 by annealing Si/Ni/Si structures and have systematically evaluated the impacts of the Si layer thickness on oxidation, surface roughening and the silicidation reaction. X-ray photoelectron spectroscopy analyses revealed that suppression of Ni oxidation due to the top Si layer makes it possible to form an ultrathin Ni silicide layer with a thickness of around 2 nm. Then, it turned out that the composition ratio of Ni and Si depends on not only the annealing temperature but also the initial thickness ratio of the top and bottom Si layers. Furthermore, this work clarified that the ultra-thin top Si layer has a large impact on the surface morphology during Ni silicide formation with diffusion and preferential oxidation.

    DOI： 10.35848/1347-4065/ad1777

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  7. Formation of β-FeSi<sub>2</sub> nanodots by SiH<sub>4</sub> exposure to Fe nanodots

    Saito, H; Makihara, K; Taoka, N; Miyazaki, S

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 2 )   2024.2

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    We have demonstrated the formation of β-FeSi2 nanodots (NDs) with an areal density as high as ∼1011 cm−2 on SiO2 by exposing Fe NDs to SiH4 at 400 °C and characterized their RT light-emission properties. After SiH4 exposure, even at 1.0 Pa for 60 s, stable photoluminescence (PL) signals, being characteristic of the semiconducting phase of β-FeSi2, were observed in the energy region from 0.7 to 0.85 eV. With an increase in the amount of SiH4 exposure from 60 to 600 Pa·sec, PL intensity increased by a factor of ∼13. Note that, with a further increase in the amount of SiH4 over 600 Pa·sec, the PL intensity is weakened slightly. The observed decrease in the PL intensity is attributable to the selective growth of Si onto the NDs after the formation of the β-FeSi2 phase.

    DOI： 10.35848/1347-4065/ad1898

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  8. Alignment control of self-assembling Si quantum dots

    Yuki Imai, Ryoya Tsuji, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, Seiichi Miyazaki

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 162   2023.8

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：ELSEVIER SCI LTD  

    We have demonstrated the formation of one-dimensionally aligned self-assembling silicon quantum dots (Si-QDs) by low-pressure (LP) CVD using pure monosilane (SiH4) gas. Formation of Si-QDs on line-patterned SiO2 formed on p-Si(100) after low-temperature oxidation was carried out. From AFM images taken after LPCVD, we confirmed high-density Si-QDs formation with an areal density as high as-1011 cm-2 on the OH-terminated SiO2-line while dot density as low as-1010 cm-2 on as-grown SiO2. We also confirmed that, with a decreasing the SiO2 line width, the number of Si-QDs on the SiO2-line was decreased evidently. Based on the results, we have succeeded in the one-dimensional arrangement of Si-QDs on the-30 nm-width SiO2 line-patterns.

    DOI： 10.1016/j.mssp.2023.107526

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  9. Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure

    Matsushita Keigo, Ohta Akio, Shibayama Shigehisa, Tokunaga Tomoharu, Taoka Noriyuki, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SG )   2023.6

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    Effects of the surface modification by O2 plasma exposure on the Al/Ge(111) structure have been investigated in order to get an insight into a layer transfer technique of the ultrathin Ge layer segregated on the Al/Ge(111) structure toward the device fabrication, and then the wafer bonding of the Al/Ge(111) structure to the thermally-grown SiO2/Si structure has been demonstrated. The O2 plasma treatment and the subsequent pure water rinse were found to be effective to form the hydrophilic surface of the Al/Ge(111) structure with a suppression of the segregated Ge layer oxidation. The Al/Ge(111) structure with the hydrophilic surface was then bonded to the SiO2/Si substrate, and its bonding strength was enough to perform Ge thinning by the chemical mechanical polishing and the wet-chemical etching using H2O2-based solutions. Ohmic contact of the ring-type device pattern with the segregated Ge/Al stack was achieved by using the remaining p-type Ge substrate as the contact pads.

    DOI： 10.35848/1347-4065/acb65c

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  10. Room Temperature Light Emission from Superatom-like Ge-Core/Si-Shell Quantum Dots

    Katsunori Makihara, Yuji Yamamoto, Yuki Imai, Noriyuki Taoka, Markus Andreas Schubert, Bernd Tillack, Seiichi Miyazaki

    NANOMATERIALS   Vol. 13 ( 9 )   2023.4

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：MDPI  

    We have demonstrated the high-density formation of super-atom-like Si quantum dots with Ge-core on ultrathin SiO2 with control of high-selective chemical-vapor deposition and applied them to an active layer of light-emitting diodes (LEDs). Through luminescence measurements, we have reported characteristics carrier confinement and recombination properties in the Ge-core, reflecting the type II energy band discontinuity between the Si-clad and Ge-core. Additionally, under forward bias conditions over a threshold bias for LEDs, electroluminescence becomes observable at room temperature in the near-infrared region and is attributed to radiative recombination between quantized states in the Ge-core with a deep potential well for holes caused by electron/hole simultaneous injection from the gate and substrate, respectively. The results will lead to the development of Si-based light-emitting devices that are highly compatible with Si-ultra-large-scale integration processing, which has been believed to have extreme difficulty in realizing silicon photonics.

    DOI： 10.3390/nano13091475

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    PubMed

  11. Characterization of magnesium channeled implantation layers in GaN(0001)

    Suyama Atsushi, Kawanowa Hitoshi, Minagawa Hideaki, Maekawa Junko, Nagamachi Shinji, Aoki Masahiko, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SC )   2023.4

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    The effect of Mg channeled implantation into epitaxially grown gallium nitride (GaN) was studied using Hall-effect measurements, photoluminescence (PL), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and Rutherford backscattering spectroscopy (RBS). In the channeled implantation, deeper profiles were obtained with lower implantation energy and less damage compared to random implantation. The donor-acceptor pair signal at ∼3.28 eV, suggesting that Mg is activated, was confirmed by PL measurement when the ion dose and implantation energy are 1 × 1014 cm−2 and 20 keV, respectively. However, even with channeled implantation, several types of defects including point defects and oblong defects as seen in the random implantation were observed by TEM/STEM analysis. RBS analysis showed slightly worse crystal qualities in channeled implantation compared to non-implanted samples. Mg channeled implantation is useful to achieve deeper profiles (>1 μm), but further condition tuning of process will be necessary for practical application.

    DOI： 10.35848/1347-4065/acb951

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  12. Formation of ultra-thin NiGe film with single crystalline phase and smooth surface

    Nishimura Shunsuke, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SC )   2023.4

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    Formation of an ultra-thin nickel-germanide (Ni-germanide) film on a SiO2 film has been attempted with stacking structures of Ni with various thicknesses formed on Ge films with thicknesses of 4 nm or 20 nm and annealing in an N2 ambient condition. Physical analyses revealed that the ultra-thin Ni-germanide films with smooth surfaces could be formed on the SiO2 film after annealing at 400 °C without depending on the Ni thickness on the 4 nm thick Ge films. In the formation, reductive and oxidative reactions occurred in the films, which are quite important for determining a composition of the Ni-germanide.

    DOI： 10.35848/1347-4065/acac6f

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    Scopus

  13. Evaluation of chemical structure and Si segregation of Al/Si(111)

    Sakai Taiki, Ohta Akio, Matsushita Keigo, Taoka Noriyuki, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SC )   2023.4

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    Control of diffusion and segregation of Si atoms through a thin metal layer from a stacked Si structure is one of the effective techniques to grow two-dimensional (2D) or ultrathin Si crystals. We have studied the formation of the Al layer with a flat surface and high crystallinity on a wet-cleaned Si(111) wafer by thermal evaporation in order to use it as a growth template for ultrathin Si crystals. Then, the impacts of the annealing in N2 ambient on the surface flatness, the Al crystallinity, and the chemical bonding features for the Al/Si(111) structure were investigated. A formation of a sub-nanometer Si layer on the Al(111) surface using Si segregation with keeping surface flatness was demonstrated by the control of annealing temperature.

    DOI： 10.35848/1347-4065/acb1fd

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    Scopus

  14. Effects of Cl passivation on Al2O3/GaN interface properties

    Nagai Taisei, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SA )   2023.1

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    We investigated the effects of a HCl-based cleaning (SC2) and post-deposition annealing (PDA) on an Al2O3/GaN interface and electrical properties. X-ray photoelectron spectroscopy revealed the existence of the Cl atoms near the interface after the Al2O3 deposition and subsequent PDA, resulting in a band bending at the GaN surface. A C-V curve of a MOS capacitor with the Al2O3/GaN interface with SC2 was shifted toward the positive bias direction compared with that without SC2. It was found that PDA induced negative shifts of the C-V curves, and that the SC2 treatment increases interface trap density at the Al2O3/GaN interface. These results indicate that the Cl termination of the GaN surface has clear impacts on the interface and electrical properties.

    DOI： 10.35848/1347-4065/ac73d9

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  15. Study on Electron Emission from Phosphorus ?-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures

    Katsunori Makihara, Tatsuya Takemoto, Shuji Obayashi, Akio Ohta, Noriyuki Taoka, Seiichi Miyazaki

    IEICE TRANSACTIONS ON ELECTRONICS   Vol. E105C ( 10 ) page： 610 - 615   2022.10

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：IEICE-INST ELECTRONICS INFORMATION COMMUNICATION ENGINEERS  

    We have fabricated two-tiered heterostructures consisting of phosphorus delta-doped Si quantum dots (Si-QDs) and undoped Si-QDs and studied their electron field emission properties. Electron emission was observed from the P-doped Si-QDs stack formed on the undoped Si-QDs stack by applying a forward bias of similar to 6 V, which was lower than that for pure Si-QDs stack. This result is attributed to electric field concentration on the upper P-doped Si-QD layers beneath the layers of the undoped Si-QDs stack due to the introduction of phosphorus atom into the Si-QDs, which was positively charged due to the ionized P donor. The results lead to the development of planar-type electron emission devices with a low-voltage operation.

    DOI： 10.1587/transele.2021FUP0006

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    CiNii Research

  16. Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure

    Matsushita Keigo, Ohta Akio, Taoka Noriyuki, Hayashi Shohei, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SH )   2022.7

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    We have studied the impact of Ge substrate heating during ∼25 nm thick Al deposition and post annealing in N2 ambient on the surface flatness of an Al/Ge(111) structure, the crystallographic structure of the deposited Al layer, and formation of a Ge segregated layer. Surface segregation of Ge atoms on a flat metal surface is an effective means of growing two-dimensional Ge crystals as well as an ultrathin Ge crystalline layer. The surface morphology of the Al/Ge(111) structure becomes flat by substrate heating during Al deposition. The crystallinity of the Al layer on Ge(111) can be improved by both substrate heating and post annealing. Ge segregation on a flat Al(111) surface also occurred by post annealing.

    DOI： 10.35848/1347-4065/ac5fbc

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  17. Study on silicidation reaction of Fe nanodots with SiH<sub>4</sub>

    Furuhata, H; Makihara, K; Shimura, Y; Fujimori, S; Imai, Y; Ohta, A; Taoka, N; Miyazaki, S

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 5 )   2022.5

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Applied Physics Express  

    We have demonstrated the formation of Fe-silicide nanodots (NDs) on SiO2 by exposing Fe NDs to SiH4. The Fe NDs were formed by exposing ultrathin Fe film deposited on SiO2 to remote H2-plasma. After SiH4 exposure at 400 °C, formation of Fe-silicide NDs with an areal dot density over 1011 cm-2 was confirmed. Photoluminescence from the Fe-silicide NDs was observable at room temperature in the near-infrared, being attributed to radiative recombination between quantized states in the NDs. The results will lead to the development of Si-based light-emitting devices that are highly compatible with Si ultralarge-scale-integration processing.

    DOI： 10.35848/1882-0786/ac6727

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  18. Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots

    Honda Shunsuke, Makihara Katsunori, Taoka Noriyuki, Furuhata Hiroshi, Ohta Akio, Oshima Daiki, Kato Takeshi, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SA )   2022.1

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    We formed FePt magnetic nanodots (NDs) by exposing an ultrathin bilayer metal stack on ∼3.0 nm SiO2/Si(100) substrates to a remote H2 plasma (H2-RP) and studied the effect of external heating during the exposure to H2-RP on the formation and magnetic properties of NDs. The ultrathin bilayer with a uniform surface coverage drastically changed to NDs with an areal density as high as ∼3.5 × 1011 cm-2 by exposing to H2-RP with external heating. We also found that NDs formed by the exposure to H2-RP at 400 °C exhibited a perpendicular anisotropy with a perpendicular coercivity of ∼1.5 kOe, reflecting the magneto-crystalline anisotropy of (001)-oriented L10 phase FePt.

    DOI： 10.35848/1347-4065/ac2036

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  19. Segregation control for ultrathin Ge layer in Al/Ge(111) system

    Akio Ohta, Masato Kobayashi, Noriyuki Taoka, Mistuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SA )   2022.1

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：IOP Publishing Ltd  

    An impact of the vacuum anneal of Al/Ge(111) structure on the Ge segregation has been investigated to get an insight into the precise control of ultrathin Ge crystalline growth. The Al/Ge(111) structure was prepared by thermal evaporation of Al on wet-cleaned Ge(111) and then vacuum annealed without air exposure to promote Ge formation on the Al surface. The Ge formation and its chemical bonding features were evaluated by X-ray photoelectron spectroscopy analysis. In addition, changes in the average Ge thickness depending on annealing temperature and time were crudely estimated. We found that the annealing temperature had a greater effect than time on the control of sub-nanometer scale Ge growth.

    DOI： 10.35848/1347-4065/ac19ff

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  20. Characterization of Light Emission Properties of Impurity Doped Ge/Si Core-Shell Quantum Dots

    Miyazaki S., Imai Y., Makihara K.

    ECS Transactions   Vol. 109 ( 4 ) page： 335 - 341   2022

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：ECS Transactions  

    We have fabricated valency-controlled Si-QDs with Ge-core with an areal density as high as ~1011 cm-2 on ultrathin SiO2 and studied the effect of phosphorus- and boron-doping on Ge-core from their PL properties. During the Ge deposition, delta doping of phosphorus or boron atoms in QDs was carried out by pulse injection using 1% PH3 or B2H6 diluted with He, respectively. No changes in dot size and density with either P- or B-doping were confirmed by AFM topographic images. Under photoexcitation of undoped QDs with a 976-nm line from a semiconductor laser, broad PL spectra consisting of four Gaussian components originating from radiative recombination through quantized states in QDs were observed in the energy range from 0.62 to 0.85 eV without impurity doping even at room temperature. In the doped QDs, relatively-narrow components peaked at ~0.68 eV and ~0.64eV were observed with P-doping and with B-doping to Ge-core, respectively, in addition to the four components seen in undoped QDs. It is interesting noted that, with an increase in B2H6 pulse injection from 1 to 4 times, the integrated PL intensity was enhanced by a factor of 1.4 to 2.4 compared to that of the undoped QDs while no significant change in spectral shape was observable. This can be interpreted in terms of an increase in the number of holes with B-doping to the Ge core since the carrier recombination rates is proportional to the product of the number of electrons and holes confined in QD under weak photoexcitation.

    DOI： 10.1149/10904.0335ecst

    Scopus

  21. Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal Reviewed International journal

    Ohta Akio, Yamada Kenzo, Sugawa Hibiki, Taoka Noriyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    DOI： 10.35848/1347-4065/abdad0

    Web of Science

    Scopus

  22. Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy Reviewed International journal

    Ohta Akio, Imagawa Takuya, Taoka Noriyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SA )   2021.1

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    Web of Science

  23. Energy band diagram for SiO<inf>2</inf>/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy

    Ohta A., Imagawa T., Taoka N., Ikeda M., Makihara K., Miyazaki S.

    Japanese Journal of Applied Physics   Vol. 60   2021.1

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    We have studied the energy band diagram for the Si surface and SiO2/Si system by using ultraviolet photoelectron spectroscopy (UPS) measurements. In the UPS measurements, monochromatized vacuum ultraviolet with variable incident photon energies below 10.50 eV was used in order to increase the detection limit of the depth from the surface and to understand the electronic states not only at the surface but also in the region near the interface of the stacked structure. From the incident photon energy dependence of the UPS spectral width, the energy level of the valence band top of the H-terminated Si surface and the electrical potential change in the SiO2/Si structure has been evaluated. Also, the vacuum work function value of the hetero-epitaxial Ag(111) surface has been investigated to check this measurement technique.

    DOI： 10.35848/1347-4065/abb75b

    Scopus

  24. Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core Reviewed International journal

    Makihara Katsunori, Fujimori Shuntaro, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 120   2020.12

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    Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：Materials Science in Semiconductor Processing  

    DOI： 10.1016/j.mssp.2020.105250

    Web of Science

    Scopus

  25. Characterization of photoluminescence from Si quantum dots with B delta-doped Ge core Reviewed International journal

    Maehara Takuya, Fujimori Shuntaro, Ikeda Mitsuhisa, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 119   2020.11

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    Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：Materials Science in Semiconductor Processing  

    DOI： 10.1016/j.mssp.2020.105215

    Web of Science

    Scopus

  26. Complex dielectric function of Si oxide as evaluated from photoemission measurements Reviewed International journal

    Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.7

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Japanese Journal of Applied Physics  

    DOI： 10.35848/1347-4065/ab8c99

    Web of Science

    Scopus

  27. Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface Reviewed

    Kobayashi Masato, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Taoka Noriyuki, Simizu Tomohiro, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/ab69de

    Web of Science

  28. Characterization of magnetic-field dependent electron transport of Fe3Si nanodots by using a magnetic AFM probe Reviewed International coauthorship International journal

    Wu J.

    ECS Transactions   Vol. 98 ( 5 ) page： 493 - 498   2020

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    Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：ECS Transactions  

    DOI： 10.1149/09805.0493ecst

    Scopus

  29. Electron field emission from multiply-stacked Si quantum dots structures with graphene top-electrode Reviewed International journal

    Niibayashi T.

    ECS Transactions   Vol. 98 ( 5 ) page： 429 - 434   2020

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    Authorship：Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：ECS Transactions  

    DOI： 10.1149/09805.0429ecst

    Scopus

  30. Crystallization of Ge thin films on sapphire(0001) by thermal annealing Reviewed International journal

    Sugawa H.

    ECS Transactions   Vol. 98 ( 5 ) page： 505 - 511   2020

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：ECS Transactions  

    DOI： 10.1149/09805.0505ecst

    Scopus

  31. Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures

    Takada Noriharu, Taoka Noriyuki, Ohta Akio, Yamamoto Taishi, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.8

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/1347-4065/ab26ac

    Web of Science

  32. Impact of surface pre-treatment on Pt-nanodot formation induced by remote H-2-plasma exposure

    Fujimori Shuntaro, Makihara Katsunori, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.8

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/1347-4065/ab23f9

    Web of Science

  33. Effect of H-2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core

    Fujimori Shuntaro, Nagai Ryo, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.8

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/1347-4065/ab0c7a

    Web of Science

  34. Impact of remote plasma oxidation of a GaN surface on photoluminescence properties

    Takada Noriharu, Taoka Noriyuki, Yamamoto Taishi, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/1347-4065/ab09c9

    Web of Science

  35. Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots

    Futamura Yuto, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

    IEICE TRANSACTIONS ON ELECTRONICS   Vol. E102C ( 6 ) page： 458-461   2019.6

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1587/transele.2018FUP0007

    Web of Science

  36. Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy

    Futamura Yuto, Nakashima Yuta, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SA )   2019.2

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/1347-4065/aaeb38

    Web of Science

  37. Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core

    Nagai Ryo, Yamada Kentaro, Fujimori Shuntaro, Ikeda Mitsuhisa, Makihara Katsunori, Ohta Akio, Miyazaki Seiichi

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 33 ( 12 )   2018.12

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1088/1361-6641/aaebbc

    Web of Science

  38. Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface

    Ohta Akio, Nguyen Xuan Truyen, Fujimura Nobuyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.57.06KA08

    Web of Science

  39. Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties

    Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.57.06JE01

    Web of Science

  40. Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He

    Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Shimizu Mitsuaki, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.57.06KA01

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  41. Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N-2 ambient

    Ito Koichi, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.57.06HD08

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  42. Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

    Ohta Akio, Kato Yusuke, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.57.06HD05

    Web of Science

  43. Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

    Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Nakatsuka Osamu, Shimizu Mitsuaki, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.57.06KA05

    Web of Science

  44. Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis

    Fujimura Nobuyuki, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.57.04FB07

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  45. Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si plus Ge) compositions

    Ito Koichi, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.57.04FJ05

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  46. High thermal stability of abrupt SiO2/GaN interface with low interface state density

    Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Shimizu Mitsuaki, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.57.04FG11

    Web of Science

  47. Characterization of remote O-2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements

    Nguyen Xuan Truyen, Ohta Akio, Makihara Katsunori, Ikeda Mitsuhisa, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 1 )   2018.1

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.57.01AD02

    Web of Science

  48. Formation of Mn-germanide nanodots on ultrathin SiO2 induced by remote hydrogen plasma

    Wen Yinghui, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 1 )   2018.1

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.57.01AF05

    Web of Science

  49. Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection

    Makihara Katsunori, Ikeda Mitsuhisa, Fujimura Nobuyuki, Yamada Kentaro, Ohta Akio, Miyazaki Seiichi

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 1 )   2018.1

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/APEX.11.011305

    Web of Science

  50. Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements Reviewed

    N. X. Truyen, A. Ohta, K. Makihara, M. Ikeda, and S. Miyazaki

    Japanese Jounal of Applied Physics   Vol. 57   page： 01AD02   2018

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  51. Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection Reviewed

    K. Makihara, M. Ikeda, N. Fujimura, K. Yamada, A. Ohta, and S. Miyazaki

    Applied Physics Express   Vol. 11   page： 011305 (4pages)   2018

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  52. Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si+Ge) compositions Reviewed

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    Japanese Jounal of Applied Physics   Vol. 57   page： 04FJ05   2018

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  53. Carrier Conduction in SiO2/GaN Structure with Abrupt Interface

    Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

    2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)     page： .   2018

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    Web of Science

  54. High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots Reviewed

    Hai Zhang, Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta, and Seiichi Miyazaki

    ECS Trans.   Vol. 86 ( 7 ) page： 131-138   2018

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1149/08607.0131ecst

  55. Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties

    Takeuchi Daichi, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 70   page： 183-187   2017.11

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.mssp.2016.12.015

    Web of Science

  56. Thermal Stability of SiO<sub>2</sub>/GaN Interface Formed by Remote Plasma CVD

    NGUYEN TRUYEN XUAN, Taoka Noriyuki, Ohta Akio, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

    JSAP Annual Meetings Extended Abstracts   Vol. 2017.2 ( 0 ) page： 3024 - 3024   2017.8

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    Language：Japanese   Publishing type：Research paper (scientific journal)   Publisher：The Japan Society of Applied Physics  

    DOI： 10.11470/jsapmeeting.2017.2.0_3024

    CiNii Research

  57. Magnetoelectronic transport of double stack FePt nanodots

    Makihara Katsunori, Kawase Taiga, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

    APPLIED PHYSICS LETTERS   Vol. 111 ( 5 )   2017.7

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1063/1.4985603

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  58. Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy

    Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    MICROELECTRONIC ENGINEERING   Vol. 178   page： 85-88   2017.6

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.mee.2017.05.001

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  59. Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis

    Ohta Akio, Murakami Hideki, Ikeda Mitsuhisa, Makihara Katsunori, Ikenaga Eiji, Miyazaki Seiichi

    MICROELECTRONIC ENGINEERING   Vol. 178   page： 80-84   2017.6

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    DOI： 10.1016/j.mee.2017.05.002

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  60. Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation

    Lu Yimin, Makihara Katsunori, Takeuchi Daichi, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 6 )   2017.6

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.56.06GG07

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  61. Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors

    Kato Yusuke, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    IEICE TRANSACTIONS ON ELECTRONICS   Vol. E100C ( 5 ) page： 468-474   2017.5

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1587/transele.E100.C.468

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  62. Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces

    Fujimura Nobuyuki, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.56.04CB04

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  63. Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface

    Truyen Nguyen Xuan, Ohta Akio, Makihara Katsunori, Ikeda Mitsuhisa, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.56.01AF01

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  64. High-density formation of Ta nanodot induced by remote hydrogen plasma

    Wang Yaping, Takeuchi Daichi, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.7567/JJAP.56.01AE01

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  65. Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors Reviewed

    Y. Kato, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    IEICE TRANSACTIONS on Electronics   Vol. E100-C   page： 468-474   2017

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  66. Low Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation Reviewed

    Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki

    Japanese Journal of Applied Physics   Vol. 56   page： 06GG07 (4page)   2017

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  67. Potential Changes and Chemical Bonding Features for Si-MOS Diode as Evaluated from HAXPES Analysis Reviewed

    A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, and S. Miyazaki

    Microelectronic Engineering   Vol. 178   page： 80-84   2017

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  68. Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy Reviewed

    A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    Microelectronic Engineering   Vol. 178   page： 85-88   2017

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  69. Impact of Phosphorus Doping to Multiple-Stacked Si Quantum Dots on Electron Emission Properties Reviewed

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki

    Materials Science in Semiconductor Processing   Vol. 70   page： 183-187   2017

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  70. Photoemission Study on Electrical Dipole at SiO2/Si and HfO2/SiO2 Interfaces Reviewed

    N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 56   page： 4CB04 (6pages)   2017

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  71. Magnetoelectronic transport of double stack FePt nanodots Reviewed

    K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki

    Appl. Phys. Lett.   Vol. 111   page： 052403 (4pages)   2017

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  72. Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices

    Miyazaki Seiichi, Yamada Kentaro, Makihara Katsunori, Ikeda Mitsuhisa

    SEMICONDUCTOR PROCESS INTEGRATION 10   Vol. 80 ( 4 ) page： 167-172   2017

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1149/08004.0167ecst

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  73. Evaluation of Dielectric Function of Thermally-grown SiO2 and GeO2 from Energy Loss Signals for XPS Core-line Photoelectrons Reviewed

    T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara and S. Miyazaki

    ECS Trans.   Vol. 75 ( 8 ) page： 777-783   2016

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  74. Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature Reviewed

    K. Makihara, T. Kato, Y. Kabeya, Y. Mitsuyuki, A. Ohta, D. Oshima, S. Iwata, Y. Darma, M. Ikeda and S. Miyazaki

    Scientific Reports   Vol. 6   page： 33409 (7 pages)   2016

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  75. Formation and characterization of high-density FeSi nanodots on SiO2 induced by remote H2 plasma Reviewed

    H. Zhang, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

    Jpn, J. Appl. Phys.   Vol. 55   page： 01AE20   2016

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    Language：English   Publishing type：Research paper (scientific journal)  

  76. Evaluation of field emission properties from multiple-stacked Si quantum dots Reviewed

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

    Thin Solid Films   Vol. 602   page： 68-71   2016

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  77. Study on electroluminescence from multiply-stacking valency controlled Si quantum dots Reviewed

    T. Yamada, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

    Thin Solid Films   Vol. 602   page： 48-51   2016

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  78. Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core Reviewed

    K. Yamada, K. Kondo, K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki

    ECS Trans.   Vol. 75 ( 8 ) page： 695-700   2016

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  79. Photoluminescence study of high density Si quantum dots with Ge core Reviewed

    K. Kondo, K. Makihara, M. Ikeda, and S. Miyazaki

    Journal of Applied Physics   Vol. 19   page： 033103 (5pages)   2016

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  80. Processing and Characterization of Si/Ge Quantum Dots Reviewed

    S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda

    Technical Digest of Int. Electron Devices Meeting     page： 826-830   2016

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  81. High-density formation of Ta nanodot induced by remote hydrogen plasma Reviewed

    Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    Jpn. J. of Appl. Phys.   Vol. 56   page： 01AE01/4pages   2016

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  82. Impact of Embedded Mn Nanodots on Resistive Switching Characteristics of Si-rich Oxides as Measured in Ni-Electrodes MIM Diodes Reviewed

    T. Arai, A. Ohta, K. Makihara, and S. Miyazaki

    Jpn. J. of Appl. Phys.   Vol. 55   page： 06GH07/5pages   2016

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  83. Evaluation of Valence Band Top and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS Reviewed

    N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki

    Jpn. J. of Appl. Phys.   Vol. 55   page： 08PC06/5pages   2016

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  84. Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface Reviewed

    N. X. Truyen, A. Ohta, K. Makihara, M. Ikeda and S. Miyazaki

    Jpn. J. of Appl. Phys.   Vol. 56   page： 01AF01/5pages   2016

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  85. High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of their Magnetic Properties Reviewed

    R. Fukuoka, K. Makihara, H. Zhang, A. Ohta, T. Kato, S. Iwata, M. Ikeda and S. Miyazaki

    Trans. Mat. Res. Sco. Japan   Vol. 40 ( 4 ) page： 347-350   2015

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  86. Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy Reviewed

    A. Ohta, K. Makihara and S. Miyazaki

    Microelectronic Engineering   Vol. 147   page： 264-268   2015

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  87. Progress in determination method for ultrathin Si-based oxide bandgaps from analysis of energy loss signals for photoelectrons Reviewed

    A. Ohta, H. Murakami, K. Makihara and S. Miyazaki

    Jpn, J. Appl. Phys.   Vol. 54   page： 06FH08   2015

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  88. Increase in the work function of W/WO3 by helium plasma irradiation Reviewed

    S. Kajita, A. Ohta, T. Ishida, K. Makihara, T. Yoshida and N. Ohno

    Jpn, J. Appl. Phys.   Vol. 54   page： 126201   2015

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  89. Resistive Switching Characteristics of Si-Rich Oxides with Embedding Ti Nanodots Reviewed

    Y. Kato, T. Arai, A. Ohta, K. Makihara and S. Miyazaki

    ECS Trans.   Vol. 69 ( 10 ) page： 291-298.   2015

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  90. Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-Grown SiO2/4H-SiC Structure Reviewed

    H. Watanabe, A. Ohta, K. Makihara and S. Miyazaki

    ECS Trans.   Vol. 69 ( 10 ) page： 179-186   2015

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  91. Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements Reviewed

    A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara, and S. Miyazaki

    IEICE TRANSACTIONS on Electronics   Vol. E98-C   page： 406-410   2015

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  92. High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy Reviewed

    D. Takeuchi,K. Makihara,M. Ikeda,S. Miyazaki,H. Kaki and T. Hayashi

    IEICE Trans. on Electronics   Vol. E97-C ( 5 ) page： 397-400   2014

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  93. Selective Growth of Self-Assembling Si and SiGe Quantum Dots Reviewed

    K. Makihara,M. Ikeda and S. Miyazaki

    IEICE Trans. on Electronics   Vol. E97-C ( 5 ) page： 393-396   2014

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  94. Characterization of Electron Emission from High Density Self-Aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy Reviewed

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

    ECS Trans.   Vol. 64 ( 6 ) page： 923-928   2014

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  95. Photoluminescence Study of Si Quantum Dots with Ge Core Reviewed

    K. Makihara, K. Kondo, M. Ikeda, A. Ohta and S. Miyazaki

    ECS Trans.   Vol. 64 ( 6 ) page： 365-370   2014

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  96. Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack Reviewed

    A. Ohta, H. Murakami, K. Hashimoto, K. Makihara and S. Miyazaki

    ECS Trans.   Vol. 64 ( 6 ) page： 241-248   2014

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  97. Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization Reviewed

    K. Makihara, M. Ikeda, T. Okada, and S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 53   page： 11RA02   2014

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    DOI： 10.7567/JJAP.53.11RA02

  98. Effect of electric field concentration using nanopeak structures on the current-voltage characteristics of resistive switching memory Reviewed

    S. Otsuka, T. Shimizu, S. Shingubara, K. Makihara, S. Miyazaki, A. Yamasaki, Y. Tanimoto and K. Takase

    AIP Advances   Vol. 4   page： 087110 (7 pages)   2014

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  99. High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma Reviewed

    H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and S. Miyazaki

    Advanced Materials Research   Vol. 750-752   page： 1011-1015   2013

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  100. Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots Reviewed

    H. Takami, K. Makihara, M. Ikeda and S. Miyazaki

    Japanese Journal of Applied Physics   Vol. 52 ( 4 ) page： 04CG08   2013

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  101. X-ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures Reviewed

    A. Ohta. K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota

    IEICE TRANSACTIONS on Electronics   Vol. 96-C ( 5 ) page： 680-685   2013

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  102. Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Reviewed

    A. Ohta, K. Makihara, M. Ikeda, H. Murakamis, S. Higashi and S. Miyazaki

    IEICE TRANSACTIONS on Electronics   Vol. 96-C ( 5 ) page： 702-707   2013

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  103. Characterization of Resistive Switching of Pt/Si- rich Oxide/TiN System Reviewed

    M. Fukushima, A. Ohta, K. Makihara and S. Miyazaki

    IEICE TRANSACTIONS on Electronics   Vol. 96-C ( 5 ) page： 708-713   2013

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  104. Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar Structures by Conducting-Probe Atomic Force Microscopy Reviewed

    D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi

    IEICE TRANSACTIONS on Electronics   Vol. 96-C ( 5 ) page： 718-721   2013

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  105. Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures Reviewed

    M. Ikeda, K. Makihara and S. Miyazaki,

    IEICE TRANSACTIONS on Electronics   Vol. 96-C ( 5 ) page： 694-698   2013

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  106. Temporal Changes of Charge Distribution in High Density Self-aligned Si-based Quantum Dots as Evaluated by AFM/KFM Reviewed

    N. Tsunekawa K. Makihara, M. Ikeda and S. Miyazaki

    Trans. of MRS-J   Vol. 38 ( 3 ) page： 393-396   2013

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  107. Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide ReRAMs with Ti-based Electrodes Reviewed

    A. Ohta, M. Fukusima, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki

    Jpn. J. Appl. Phys.   Vol. 52   page： 11NJ06   2013

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  108. Highly-crystallized Ge:H Film Growth from GeH4 VHF-ICP -Crystalline Nucleation Initiated by Ni-nanodots- Reviewed

    K. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi and S. Miyazak

    Jpn. J. Appl. Phys.   Vol. 52 ( 9 ) page： 11NA04   2013

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  109. Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application Reviewed

    S. Miyazaki, M. Ikeda and K. Makihara

    ECS Trans   Vol. 58 ( 9 ) page： 231-237   2013

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  110. Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes Reviewed

    A. Ohta, K. Makihara, M. Fukusima, H. Murakami, S. Higashi and S. Miyazaki

    ECS Trans   Vol. 58 ( 9 ) page： 293-300   2013

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  111. Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy Reviewed

    K. Makihara, H. Deki, M Ikeda and S, Miyazaki

    Journal of Non-Crystalline Solids   Vol. 358 ( 17 ) page： 2086-2089   2012

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    DOI： http://dx.doi.org/10.1016/j.jnoncrysol.2011.12.035

  112. Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density Reviewed

    K. Makihara, H. Deki, M Ikeda and S, Miyazaki

    Japanese Journal of Applied Physics   Vol. 51 ( 4 ) page： 04DG08   2012

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    DOI： 10.1143/JJAP.51.04DG08

  113. Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes Reviewed

    K. Makihara, M. Fukushima, A. Ohta, M. Ikeda and S. Miyazaki

    ECS TRANSACTIONS   Vol. 50 ( 9 ) page： 459-464   2012

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  114. Study of Electron Transport Characteristics Through Self-Aligned Si-Based Quantum Dots Reviewed

    K. Makihara, M. Ikeda and S. Miyazaki

    Journal of Applied Physics   Vol. 112   page： 104301   2012

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    DOI： http://dx.doi.org/10.1063/1.4766383

  115. Collective Tunneling Model in Charge Trap Type NVM Cell Reviewed

    M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh

    Japanese Journal of Applied Physics   Vol. 50 ( 4 ) page： 04DD04   2011

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  116. Study on Native Oxidation of Ge (111) and (100) Surfaces Reviewed

    S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi and S. Miyazaki

    Japanese Journal of Applied Physics   Vol. 50 ( 4 ) page： 04DA12   2011

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  117. The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure Reviewed

    G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki

    IEICE TRANSACTIONS on Electronics   Vol. 94-C ( 5 ) page： 699-704   2011

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  118. Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structures Reviewed

    N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki

    Japanese Journal of Applied Physics   Vol. 49   page： 04DJ04   2011

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  119. Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using AFM/Kelvin Probe Technique Reviewed

    K. Makihara and S. Miyazaki

    Japanese Journal of Applied Physics   Vol. 49 ( 2 ) page： 065002   2011

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  120. High Density Formation of Ge Quantum Dots on SiO2 Reviewed

    K. Makihara, M. Ikeda, A. Ohta, S. Takeuchi, Y. Shimura, S. Zaima and S. Miyazaki

    Solid State Electronics   Vol. 60   page： 65-69   2011

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  121. Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures Reviewed

    N. Morisawa, M. Ikeda, K. Makihara and S. Miyazaki

    Key Engineering Materials   Vol. 470   page： 135-139   2011

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  122. Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Reviewed

    M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta, T. Endoh

    IEICE TRANSACTIONS on Electronics   Vol. 94-C ( 5 ) page： 730-736   2011

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  123. Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory Reviewed

    K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki

    Japanese Journal of Applied Physics   Vol. 50 ( 8 ) page： 08KE06   2011

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  124. Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure Reviewed

    M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh

    Key Engineering Materials   Vol. 470   page： 48-53   2011

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  125. Self-Align Formation of Si Quantum Dots Reviewed

    K. Makihara, M. Ikeda, H. Deki, A. Ohta and S. Miyazaki

    ECS TRANSACTIONS   Vol. 33 ( 6 ) page： 661-667   2010

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  126. Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots Reviewed

    Y. Sakurai, J. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara and S. Miyazaki

    Japanese Journal of Applied Physics   Vol. 49 ( 1 ) page： 014001   2010

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  127. Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application

    S. Miyazaki, K. Makihara, M. Ikeda

    Thin Solid Films   Vol. 518   page： S30-S34   2010

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  128. Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application Reviewed

    S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto

    Journal of of Materials Science Forum   Vol. 638-642   page： 1725-1730   2010

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  129. Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots Reviewed

    Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

    Physica E   Vol. 42 ( 4 ) page： 918–921   2010

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  130. Formation Mechanism of Metal nanodots Induced by Remote Plasma Exposure Reviewed

    K. Makihara, K. Shimanoe, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki

    Journal of Optoelectronics and Advanced Materials   Vol. 12 ( 3 ) page： 626-630   2010

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  131. Electron Tunneling between Si Quantum dots and Tow Dimensional Electron Gas under Optical Excitation at Low Temperatures Reviewed

    Y. Sakurai, Y. Takada, J-I Iwata, K. Shiraishi, S. Nomura, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

    ECS TRANSACTIONS   Vol. 28 ( 1 ) page： 369-374   2010

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  132. Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation Reviewed

    T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige and S. Miyazaki

    Physica Status Solidi C   Vol. 7 ( 3-4 ) page： 732-734   2010

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  133. Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots Reviewed

    K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki

    IEICE TRANSACTIONS on Electronics   Vol. 93-C ( 5 ) page： 569-572   2010

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  134. Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma Reviewed

    A. Kawanami, K. Makihara, M. Ikeda and S. Miyazaki

    Japanese Journal of Applied Physics   Vol. 49   page： 08JA04   2010

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  135. Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices Reviewed

    M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, and Y. Shigeta

    Physica E   Vol. 43 ( 10 ) page： 2602–2605   2010

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  136. Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge Microliquid Reviewed

    T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa and Seiichi Miyazaki

    ECS TRANSACTIONS   Vol. 33 ( 6 ) page： 165-170   2010

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  137. Electroluminescence from Si Quantum Dots/SiO2 Multilayers with Ultrathin Oxide Layers due to Bipolar Injection Reviewed

    J. Xu, K. Makihara, H. Deki and S. Miyazaki

    Solid State Communications   Vol. 149   page： 739-742   2009

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  138. Temperature Dependence of Capacitance of Si Quantum Dot Floating Gate MOS Capacitor Reviewed

    Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara and S.Miyazaki

    Journal of Physics: Condensed Matter   Vol. 150   page： 022071   2009

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  139. Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories Reviewed

    K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi and S. Miyazaki

    IEICE TRANSACTIONS on Electronics   Vol. 92-C ( 5 ) page： 616-619   2009

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  140. Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application Reviewed

    S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto

    Solid State Phenomena   Vol. 154   page： 95-100   2009

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  141. Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique Reviewed

    K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi and S. Miyazaki

    Transaction of MRS-J   Vol. 34 ( 2 ) page： 309-312   2009

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  142. Charge Storage Characteristics of Hybrid Nanodots Floating Gate Reviewed

    S. Miyazaki, K. Makihara and M. Ikeda

    ECS TRANSACTIONS   Vol. 25 ( 7 ) page： 433-439   2009

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  143. Physics of Nano-contact Between Si Quantum Dots and Inversion Layer Reviewed

    Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara and S. Miyazaki

    ECS TRANSACTIONS   Vol. 25 ( 7 ) page： 463-469   2009

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  144. Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 Surface Reviewed

    S. Mahboob, K. Makihara, A. Ohta, S. Higashi, Y. Hata, A. Kuroda and S. Miyazaki

    ECS TRANSACTIONS   Vol. 19 ( 22 ) page： 35-43   2009

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  145. Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics Reviewed

    K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki

    Japanese Journal of Applied Physics   Vol. 47 ( 4 ) page： 3099-3102   2008

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  146. Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4 Reviewed

    T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki

    Thin Solid Films   Vol. 517 ( 1 ) page： 216-218   2008

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  147. Interface Properties and Effective Work Function of Sb-Predoped Fully Silicided NiSi Gate Reviewed

    T. Hosoi, K. Sano, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki and K. Shibahara

    Surface and Interface Analysis   Vol. 40   page： 1126-1130   2008

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  148. Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application Reviewed

    S. Miyazaki, K. Makihara and M. Ikeda

    Thin Solid Films   Vol. 517 ( 1 ) page： 41-44   2008

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    Language：English   Publishing type：Research paper (scientific journal)  

  149. Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics Reviewed

    K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki

    Thin Solid Films   Vol. 517 ( 1 ) page： 306-308   2008

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    Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

  150. Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2 Reviewed

    K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki

    ECS TRANSACTIONS   Vol. 16 ( 10 ) page： 255-260   2008

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    Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

  151. Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM Reviewed

    K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki,

    IEICE TRANSACTIONS on Electronics   Vol. E91-C ( 5 ) page： 712-715   2008

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  152. Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots Reviewed

    J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki

    Solid State Phenomena   Vol. 121-123   page： 557-560   2007

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  153. High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2

    T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki

    Materials Science Forum   Vol. 561-565   page： 1209-1212   2007

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  154. Characterization of chemical bonding features and defect state density in HfSiOxNy/SiO2 gate stack Reviewed

    A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya and Y. Nara

    Microelectronic Engineering   Vol. 84   page： 2386-2389   2007

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  155. Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application Reviewed

    S. Miyazaki, M. Ikeda and K. Makihara

    ECS TRANSACTIONS   Vol. 11 ( 6 ) page： 233-243   2007

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    Language：English   Publishing type：Research paper (scientific journal)  

  156. Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique Reviewed

    R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki

    Materials Science Forum   Vol. 561-565   page： 1213-1216   2007

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  157. Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe Reviewed

    K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki

    Thin Solid Films   Vol. 508 ( 1-2 ) page： 186-189   2006

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  158. Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4 Reviewed

    T. Sakata, K. Makihara, S. Higashi and S. Miyazaki

    Thin Solid Films   Vol. 515 ( 12 ) page： 4971-4974   2006

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  159. Study of Charged States of Si Quantum Dots with Ge Core Reviewed

    K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki

    ECS TRANSACTIONS   Vol. 3 ( 7 ) page： 257-262   2006

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    Authorship：Lead author   Language：English   Publishing type：Research paper (scientific journal)  

  160. Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories Reviewed

    S. Miyazaki, M. Ikeda and K. Makihara

    ECS TRANSACTIONS   Vol. 2 ( 1 ) page： 157-164   2006

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  161. Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS Devices Reviewed

    K. Makihara, M. Ikeda, T. Nagai, H. Murakami, S. Higashi and S. Miyazaki

    Transaction of MRS-J   Vol. 31 ( 1 ) page： 133-136   2006

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  162. Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique Reviewed

    J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki

    Thin Solid Films   Vol. 508 ( 1-2 ) page： 190-194   2006

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  163. Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment Reviewed

    K. Makihara, H. Deki, H. Murakami, S. Higashi and S. Miyazaki

    Applied Surface Science   Vol. 244 ( 1-4 ) page： 75-78   2005

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  164. Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique Reviewed

    K. Makihara, Y. Okamoto, H. Murakami, S. Higashi and S. Miyazaki

    IEICE TRANSACTIONS on Electronics   Vol. E88-C ( 4 ) page： 705-708   2005

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  165. Formation of Microcrystalline Germanium (mc-Ge:H) Films From Inductively-Coupled Plasma CVD Reviewed

    Y. Okamoto, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki

    Applied Surface Science   Vol. 244 ( 1-4 ) page： 12-15   2005

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  166. Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe Reviewed

    K. Makihara, Y. Okamoto, H. Nakagawa, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki

    Thin Solid Films   Vol. 457   page： 103-108   2004

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  167. Structural Defects effect on Ferromagnetism of Layered Oxysulfide (La1-xCaxO)Cu1-xNixS Reviewed

    K. Takase, T. Shimizu, K. Makihara, Y. Takahashi, Y. Takano, K. Sekizawa, Y. Kuroiwa, S. Aoyagi, and A. Utsumi

    Physica B   Vol. 329-333 ( 2 ) page： 961-962   2003

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  168. Electrical Resistivity and Photoemission Spectra of Layered Oxysulfide (La1-xCaxO)Cu1-xNixS Reviewed

    K. Takase, T. Shimizu, K. Makihara, H. Sato, H. Negishi, Y. Takahashi, Y. Takano, K. Sekizawa, Y. Kuroiwa, S. Aoyagi, A. Utsumi, A. Wada, A. Ino, H. Namatame, M. Taniguchi

    Physica B   Vol. 329-333 ( 2 ) page： 898-899   2003

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  169. Electrical Resistivity and Photoluminescence Spectrum of Layered Oxysulfide (LaO)CuS Reviewed

    K. Takase, M. Koyano, T. Shimizu, K. Makihara, Y. Takahashi, Y. Takano, and K. Sekizawa

    Solid State Communications   Vol. 123   page： 531-534   2002

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▼display all

To the head of Papers.▲

MISC 1

  1. Resistive Switching Properties of Si Oxide by Constant Voltage and Constant Current Application

      Vol. 117 ( 101 ) page： 25 - 29   2017.6

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    Language：Japanese  

    CiNii Books

To the head of MISC.▲

Presentations 689

  1. Fabrication of Impurity Doped Si Quantum Dots with Ge Core for Light Emission Devices Invited International conference

    K. Makihara, and S. Miyazaki

    2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 

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    Event date： 2021.9

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：Japan  

  2. ナノドットによる量子物性制御デバイスの開発 Invited

    牧原 克典、宮崎 誠一

    令和３年度「放射線科学とその応用第186委員会」第38回研究会  2021.5.18 

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    Event date： 2021.5

    Language：Japanese   Presentation type：Oral presentation (invited, special)  

    Venue：オンライン   Country：Japan  

  3. Si-Ge系ナノドットの高密度集積と光・電子物性制御 Invited

    牧原 克典、宮崎 誠一

    阪大CSRN 第二回異分野研究交流会 ~半導体ナノカーボン系~  2020.8.28 

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    Event date： 2020.8

    Language：Japanese   Presentation type：Oral presentation (invited, special)  

    Venue：オンライン   Country：Japan  

  4. Fabrication of Impurity Doped Si Quantum Dots with Ge Core for Light Emission Devices Invited International conference

    K. Makihara, M. Ikeda, and S. Miyazaki

    8th International Symposium on Control of Semiconductor Interfaces 

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    Event date： 2019.11

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：Japan  

  5. Formation and Characterization of Si Quantum Dots with Ge Core for Electroluminescent Devices Invited International conference

    Makihara Katsunori, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 

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    Event date： 2019.5

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：Japan  

  6. Si-Geナノ構造制御で展開する電子デバイス開発 Invited

    牧原 克典、宮崎 誠一

    2018年日本表面真空学会中部支部研究会 

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    Event date： 2018.11

    Language：Japanese   Presentation type：Oral presentation (invited, special)  

    Venue：静岡大学   Country：Japan  

  7. ナノ構造制御で展開する電子デバイス開発と機能進化・高度化への挑戦 Invited

    牧原 克典、宮崎 誠一

    応用物理学会東海支部 第3回ニューフロンティアリサーチワークショップ 

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    Event date： 2018.6

    Language：Japanese   Presentation type：Oral presentation (invited, special)  

    Venue：岐阜大学   Country：Japan  

  8. Luminescence Studies of Multiply Stacked Si Quantum Dots with Ge Core International conference

    11th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date： 2018.2

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：Japan  

  9. Luminescence Studies of High Density Si-based Quantum Dots International conference

    K. Makihara, T. Yamada, K. Kondo and S. Miyazaki

    JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2014.11

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：Belgium  

  10. Plasma-enhanced Self-assembling Formation of High-density Metallic Nanodots on Ultrathin SiO2 Invited International conference

    K. Makihara and S. Miyazaki

    Nagoya University (NU) & Sungkyunkwan University (SKKU) Joint Symposium 2014 

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    Event date： 2014.11

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：Korea, Republic of  

  11. Formation of One-Dimensionally Self-Aligned Si-Based Quantum Dots and Its Application to Light Emitting Diodes Invited International conference

    K. Makihara and S. Miyazaki

    26th International Microprocesses and Nanotechnology Conference 

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    Event date： 2013.11

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：Japan  

  12. High-density Formation and Characterization of Nanodots for Their Electron Device Application Invited International conference

    K. Makihara and S. Miyazaki

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2013.2

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：Japan  

  13. 一次元縦積みシリコン系量子ドットの形成と発光ダイオードへの応用 Invited

    牧原克典、池田弥央、宮崎誠一

    ED/CPM/SDM研究会 

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    Event date： 2012.5

    Language：Japanese   Presentation type：Oral presentation (invited, special)  

    Venue：豊橋技術科学大学   Country：Japan  

  14. 熱プラズマジェットを用いたミリ秒熱処理によるPt およびPt シリサイドナノドットの形成とフローティングゲートメモリ応用 Invited

    牧原克典、山根雅人、池田弥央、東清一郎、宮崎誠一

    第59回春季応用物理学会 

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    Event date： 2012.3

    Language：Japanese   Presentation type：Oral presentation (invited, special)  

    Venue：早稲田大学   Country：Japan  

  15. 金属合金化反応制御による強磁性ナノドットの高密度・自己組織化形成

    牧原 克典、宮崎 誠一

    名古屋大学ナノテクノロジープラットフォーム第１回合同シンポジウム～中部ものづくりは名大から～ 

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    Event date： 2014.2

    Language：Japanese   Presentation type：Oral presentation (invited, special)  

    Venue：名古屋大学   Country：Japan  

  16. Study on Silicidation Reaction of Fe-NDs with SiH4 International conference

    34th International Microprocesses and Nanotechnology Conference 

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    Event date： 2021.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  17. Characterization of Electronic Charged States of High Density Self-aligned Si-based Quantum Dots Evaluated with AFM/Kelvin Probe Technique International conference

    34th International Microprocesses and Nanotechnology Conference 

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    Event date： 2021.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  18. Impact of Boron Doping and H2 Annealing on Light Emission from Ge/Si Core-Shell Quantum Dots Invited International conference

    S. Miyazaki, and K. Makihara

    240th ECS Meeting 

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    Event date： 2021.10

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：Japan  

  19. Study on Silicidation Reaction of Fe-NDs with SiH4 for Light Emission Devices International conference

    2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 

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    Event date： 2021.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  20. Remote Hydrogen Plasma-Assisted Formation and Characterization of High-Density Fe-Silicide Nanodots International conference

    2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 

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    Event date： 2021.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  21. Study on Electron Emission from Phosphorus delta-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures International conference

    2021 International Conference on Solid State Devices and Materials 

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    Event date： 2021.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  22. Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots International conference

    Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2021 

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    Event date： 2021.8

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  23. Magnetoelectronic Transport Characteristics of Fe3Si Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma International conference

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology & Science 

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    Event date： 2021.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  24. High-Density Formation of FeSi2 Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma International conference

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology & Science 

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    Event date： 2021.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  25. Influence of Substrate Temperature on Plasma-Enhanced Self Assembling Formation of High Density FePt Nanodot International conference

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/14th International Conference on Plasma-Nano Technology & Science 

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    Event date： 2021.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  26. リモート水素プラズマ支援FePt合金ナノドット自己組織化形成プロセスにおける基板温度が磁化特性に与える影響

    本田俊輔, 古幡裕志, 大田 晃生, 池田 弥央,大島大輝, 加藤剛志, 牧原 克典 宮﨑 誠一

    第68回応用物理学会春季学術講演会 

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    Event date： 2021

    Language：Japanese  

    Country：Japan  

  27. 高密度FeナノドットへのSiH4照射によるシリサイド化反応制御

    古幡 裕志、牧原 克典、大田 晃生、田岡 紀之、宮﨑 誠一

    第82回応用物理学会秋季学術講演 

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    Event date： 2021

    Language：Japanese  

    Country：Japan  

  28. 基板加熱がAl/Ge(111)構造の表面平坦化とGe偏析に及ぼす影響

    松下 圭吾、大田 晃夫、田岡 紀之、林 将平、牧原 克典、宮﨑 誠一

    第82回応用物理学会秋季学術講演 

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    Event date： 2021

    Language：Japanese  

    Country：Japan  

  29. 後酸化によって形成したHf酸化物の結晶構造に基板面方位が与える影響

    安田航, 田岡 紀之, 大田 晃生, 牧原 克典, 宮﨑 誠一

    第82回応用物理学会秋季学術講演 

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    Event date： 2021

    Language：Japanese  

    Country：Japan  

  30. Si量子ドット多重集積構造へのP添加による内部ポテンシャル変調と電子放出特性評価

    尾林 秀治、牧原 克典、竹本 竜也、田岡 紀之、大田 晃夫、宮﨑誠一

    第82回応用物理学会秋季学術講演 

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    Event date： 2021

    Language：Japanese  

    Country：Japan  

  31. Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots

    J. Wu、K. Makihara、H. Zhang、H. Furuhata、N. Taoka、A. Ohta、S. Miyazaki

    第82回応用物理学会秋季学術講演 

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    Event date： 2021

    Language：Japanese  

    Country：Japan  

  32. AFM/KFMによる超高密度一次元連結Si系量子ドットの局所帯電電荷計測

    今井 友貴、牧原 克典、田岡 紀之、大田 晃生、宮﨑 誠一

    第82回応用物理学会秋季学術講演 

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    Event date： 2021

    Language：Japanese  

    Country：Japan  

  33. リモート H2 プラズマ支援による高密度 Fe 系シリサイドナノドットの 高密度一括形成

    何 智雪, 武 嘉麟, 牧原 克典, 張 海, 古幡 裕志 ，田岡 紀之, 大田 晃生, 宮崎 誠一

    第82回応用物理学会秋季学術講演 

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    Event date： 2021

    Language：Japanese  

    Country：Japan  

  34. Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode International conference

    PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting) 

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    Event date： 2020.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  35. Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing International conference

    PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting) 

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    Event date： 2020.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  36. Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots By Using a Magnetic AFM Probe International conference

    PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting) 

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    Event date： 2020.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  37. Growth of Ultrathin Ge Crystal Layer by Surface Segregation and Flattening of Ag/Ge Structure International conference

    2020 International Conference on Solid State Devices and Materials 

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    Event date： 2020.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  38. Study on Electron Field Emission from Si-Quantum-Dots with Ge-Core/Si-Quantum-Dots Hybrid Stacked Structures International conference

    12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/13th International Conference on Plasma-Nano Technology & Science 

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    Event date： 2020.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  39. Evaluation of Valence Band Top of Si Surface by Vacuum Ultraviolet Photoelectron Spectroscopy with Variable Incident Photon Energy International conference

    12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/13th International Conference on Plasma-Nano Technology & Science 

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    Event date： 2020.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  40. Al/Ge(111)の表面偏析制御による極薄Ge結晶形成

    小林 征登、大田 晃生、田岡 紀之、池田 弥央、牧原 克典、宮﨑 誠一

    第67回応用物理学会春季学術講演会 

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    Event date： 2020

    Language：Japanese  

    Country：Japan  

  41. Ge量子ドット像のXANAMによるX線エネルギー依存性測定

    鈴木 秀士、向井 慎吾、田 旺帝、野村 昌治、藤森 俊太郎、池田 弥央、牧原 克典、宮﨑 誠一、朝倉 清高

    第67回応用物理学会春季学術講演会 

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    Event date： 2020

    Language：Japanese  

    Country：Japan  

  42. Sapphire(0001)上にスパッタ形成したGe薄膜の結晶化

    須川 響、大田 晃生、小林 征登、田岡 紀之、池田 弥央、牧原 克典、宮﨑 誠一

    第67回応用物理学会春季学術講演会 

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    Event date： 2020

    Language：Japanese  

    Country：Japan  

  43. Reduced-Pressure CVDによるGeコアSi量子ドットの高密度一括形成と発光特性評価

    牧原 克典、Yamamoto Yuji、藤森 俊太郎、前原 拓哉、池田 弥央、Tillack Bernd、宮崎 誠一

    第67回応用物理学会春季学術講演会 

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    Event date： 2020

    Language：Japanese  

    Country：Japan  

  44. グラフェン電極を用いたSi量子ドット多重集積構造からの電界電子放出

    新林 智文、牧原 克典、大田 晃生、池田 弥央、宮崎 誠一

    第67回応用物理学会春季学術講演会 

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    Event date： 2020

    Language：Japanese  

    Country：Japan  

  45. Formation of High Density Fe-silicide Nanodots Induced by Remote Hydrogen Plasma and Characterization of Their Magnetic Properties International conference

    8th International Symposium on Control of Semiconductor Interfaces 

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    Event date： 2019.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  46. Application of Surface Chemical Imaging by XANAM to Ge Surfaces International conference

    8th International Symposium on Control of Semiconductor Interfaces 

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    Event date： 2019.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  47. Characterization of Photoluminescence from Si-QDs with B δ-Doped Ge Core International conference

    8th International Symposium on Control of Semiconductor Interfaces 

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    Event date： 2019.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  48. High Density Formation and Magnetoelectronic Transport Properties of Magnetic Fe-silicide Nanodots International conference

    8th International Symposium on Control of Semiconductor Interfaces 

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    Event date： 2019.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  49. Formation of High Density PtAl Nanodots Induced by Remote Hydrogen Plasma Exposure International conference

    41st International Symposium on Dry Process 

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    Event date： 2019.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  50. Operand Study of Multiple Stacked Si Quantum Dots by Hard X-ray Photoelectron Spectroscopy International conference

    International Conference on Materials and Systems for Sustainability 2019 

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    Event date： 2019.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  51. Determination of Complex Dielectric Function of Oxide Film from Photoemission Measurements International conference

    International Conference on Materials and Systems for Sustainability 2019 

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    Event date： 2019.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  52. Impact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties International conference

    International Conference on Materials and Systems for Sustainability 2019 

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    Event date： 2019.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  53. Impact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties International conference

    32nd International Microprocesses and Nanotechnology Conference 

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    Event date： 2019.10

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  54. Characterization of Ni/GaN(0001) Interfaces by Photoemission Measurements International conference

    32nd International Microprocesses and Nanotechnology Conference 

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    Event date： 2019.10

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  55. Growth of Hetero-epitaxial Al on Ge(111) and Segregation of Ge Crystal by Annealing International conference

    32nd International Microprocesses and Nanotechnology Conference 

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    Event date： 2019.10

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  56. 光電子エネルギー損失信号によるSi系材料の複素誘電関数評価

    大田 晃生、田岡 紀之、池田 弥央、牧原 克典、宮﨑 誠一

    第80回応用物理学会秋季学術講演会 

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    Event date： 2019.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  57. Ge試料表面構造のXANAM像の取得

    鈴木 秀士，向井 慎吾，田旺帝，野村 昌治，藤森 俊太郎，池田 弥央，牧原 克典，宮﨑 誠一，朝倉 清高

    第80回応用物理学会秋季学術講演会 

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    Event date： 2019.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  58. GeコアSi 量子ドットにおけるGe選択成長温度が発光特性に及ぼす影響

    藤森 俊太郎, 前原 拓哉, 今井 友貴, 池田 弥央, 牧原 克典，宮崎 誠一

    第80回応用物理学会秋季学術講演会 

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    Event date： 2019.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  59. リモート水素プラズマ支援による磁性合金FeSiナノドットの高密度・一括形成

    橋本 靖司、牧原 克典、大田 晃生、池田 弥央、香野 淳、宮崎 誠一

    第80回応用物理学会秋季学術講演会 

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    Event date： 2019.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  60. B添加がGeコアSi量子ドットのPL特性に及ぼす影響

    前原 拓哉、藤森 俊太郎、池田 弥央、大田 晃生、牧原 克典、宮崎 誠一

    第80回応用物理学会秋季学術講演会 

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    Event date： 2019.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  61. Impact of Post Deposition Annealing on Chemical Bonding Features and Filled Electronic Defects of AlSiO/GaN(0001) Structure International conference

    2019 International Conference of Solid State of Device and Materials 

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    Event date： 2019.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  62. Characterization of Electron Field Emission from Si Quantum Dots with Ge Core/Si Quantum Dots Hybrid Stacked Structures International conference

    2019 International Conference of Solid State of Device and Materials 

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    Event date： 2019.9

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  63. Growth of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface International conference

    2019 International Conference of Solid State of Device and Materials 

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    Event date： 2019.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  64. Formation of high density Fe-silicide nanodots induced by remote H2 plasma and their magnetic properties International conference

    The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 

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    Event date： 2019.7

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  65. Characterization of Electron Field Emission of Multiply-Stacked Si-QDs/SiO2 Structures International conference

    2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2019.7

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  66. HfSiOx/GaN(0001)の化学構造および電子状態分析

    大田 晃生、牧原 克典、生田目 俊秀、塩﨑 宏司、宮﨑 誠一

    シリコンテクノロジー分科会 6月度合同研究会 

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    Event date： 2019.6

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  67. 熱処理によるAl/Ge(111)上の極薄Ge層形成

    小林 征登、大田 晃生、黒澤 昌志、洗平 昌晃、田岡 紀之、池田 弥央、牧原 克典、宮﨑 誠一

    シリコンテクノロジー分科会 6月度合同研究会 

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    Event date： 2019.6

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  68. Effect of B-doping on Photoluminescence Properties of Si-QDs with Ge Core International conference

    2nd Joint ISTDM / ICSI 2019 Conference; 10th International SiGe Technology and Device Meeting (ISTDM)/ 12th International Conference on Silicon Epitaxy and Heterostructures (ICSI) 

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    Event date： 2019.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  69. Electron Field Emission from MultiplyStacked Structures consisting of Ge-Core Si Quantum Dots and Si Quantum Dots International conference

    11th Anniversary International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2019)/12th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2019) 

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    Event date： 2019.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  70. Study of GaN(0001) Surface Cleaning Using HCl-based Solutions International conference

    11th Anniversary International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2019)/12th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2019) 

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    Event date： 2019.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  71. Impact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties International conference

    11th Anniversary International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2019)/12th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2019) 

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    Event date： 2019.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  72. Study on HCl-based Wet Chemical Cleaning of Epitaxial GaN(0001) Surfaces

    Yue Xu, Akio Ohta, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Tetsuo Narita, Daigo Kikuta, Koji Shiozaki, Tetsu Kachi, Seiichi Miyazaki

    第66回応用物理学会春季学術講演会 

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    Event date： 2019.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  73. Hf/(Si+Hf)組成の異なるHfSiOx/GaN(0001)の光電子分光分析

    大田 晃生、牧原克典、生田目 俊秀、塩﨑 宏司、宮崎誠一

    第66回応用物理学会春季学術講演会 

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    Event date： 2019.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  74. Si量子ドット多重連結構造からの電界電子放出特性 -積層数依存性

    竹本竜也, 二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一

    第66回応用物理学会春季学術講演会 

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    Event date： 2019.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  75. リモートO2プラズマ支援MOCVDによるHf酸化物ナノ ドットの高密度・一括形成

    長谷川遼介、牧原克典、大田晃生、池田弥央、宮崎誠一

    第66回応用物理学会春季学術講演会 

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    Event date： 2019.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  76. ヘテロエピタキシャルAl/Ge(111)上に偏析した極薄Ge の化学分析

    小林征登、大田晃生、黒澤昌志、洗平昌晃、田岡紀之、池田弥央、牧原克典、宮崎誠一

    第66回応用物理学会春季学術講演会 

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    Event date： 2019.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  77. B添加がGeコアSi量子ドットのPL特性に及ぼす影響

    永井僚, 藤森俊太郎, 前原拓哉, 池田弥央, 牧原克典, 大田晃生, 宮崎誠一

    第66回応用物理学会春季学術講演会 

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    Event date： 2019.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  78. GeコアSi 量子ドット/Si 量子ドット多重連結構造からの電界電子放出特性および電子放出エネルギー評価

    二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一

    第66回応用物理学会春季学術講演会 

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    Event date： 2019.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  79. 光電子分光法による絶縁酸化膜の誘電関数・光学定数の決定

    大田 晃生、池田 弥央、牧原 克典、宮﨑 誠一

    電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―（第24回） 

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    Event date： 2019.1

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  80. 熱酸化SiO2/Si(111)の真空紫外光によるUPS分析

    今川 拓哉、大田 晃生、田岡 紀之、池田 弥央、牧原 克典、宮﨑 誠一

    電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―（第24回） 

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    Event date： 2019.1

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  81. Characterization of Electron Field Emission from Multiple-Stacked Ge Core Si-QDs International conference

    12th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date： 2018.12

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  82. Formation and Magnetic Characterization of High Density FePt Nanodots Induced by Remote H2 Plasma International conference

    12th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date： 2018.12

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  83. Selective Growth of Si for the Formation of Si-QDs with Ge Core and Their Photoluminescence Properties International conference

    12th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date： 2018.12

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  84. P添加GeコアSi量子ドットの帯電および局所電気特性評価

    永井僚, 藤森俊太郎, 池田弥央, 牧原克典, 大田晃生, 宮崎誠一

    第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date： 2018.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  85. Ge/Si量子ドット上へのSi選択成長および発光特性評価

    藤森俊太郎, 山田健太郎, 永井僚, 牧原克典, 池田弥央, 宮崎誠一

    第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date： 2018.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  86. GeコアSi量子ドット/Si量子ドット多重集積構造からの弾道電子放出

    二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一

    第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date： 2018.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  87. エピタキシャルAl/Ge(111)の形成と真空中熱処理による表面平坦化およびGe析出

    小林征登、大田晃生、黒澤昌志、洗平昌晃、田岡紀之、池田弥央、牧原克典、宮崎誠一

    第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date： 2018.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  88. リモート水素プラズマ支援によって高密度形成されたFePt合金ナノドットの磁化特性評価

    橋本靖司, 牧原克典, 大田晃生, 池田弥央, 宮崎誠一

    第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会 

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    Event date： 2018.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  89. High Density Formation of FePt Nanodots and Their Magnetic Properties International conference

    40th International Symposium on Dry Process 

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    Event date： 2018.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  90. Impact of Remote Plasma Oxidation of GaN Surface on Photoluminescence Properties International conference

    40th International Symposium on Dry Process 

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    Event date： 2018.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  91. Ge 2D Crystal Growth on Hetero-epitaxial Ag/Ge(111) by N2 Annealing Invited International conference

    49th IEEE Semiconductor Interface Specialists Conference 

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    Event date： 2018.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  92. Relationships between Al2O3/GaN Interface Properties near Conduction Band Edge and Post-Deposition Annealing Temperatures International conference

    48th IEEE Semiconductor Interface Specialists Conference 

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    Event date： 2018.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  93. Study on photoluminescence from Si quantum dots with Ge core International conference

    International Conference of Atomic Control Surface and Interface-14 

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    Event date： 2018.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  94. Vacuum Ultraviolet Photoelectron Spectroscopy Study of GaN(0001) Surfaces International conference

    International Conference of Atomic Control Surface and Interface-14 

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    Event date： 2018.10

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  95. Photoluminescence from insulator/GaN structures formed with remote plasma International conference

    International Conference of Atomic Control Surface and Interface-14 

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    Event date： 2018.10

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  96. Impact of Surface Pre-Treatment on Metal Migration Induced by Remote H2-Plasma Treatment International conference

    International Conference of Atomic Control Surface and Interface-14 

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    Event date： 2018.10

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  97. High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots International conference

    AiMES 2018 Meeting, ECS and SMEQ Joint International Meeting 

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    Event date： 2018.9 - 2018.10

    Language：English   Presentation type：Poster presentation  

    Country：Mexico  

  98. リモート水素プラズマ支援によるFePt合金ナノドットの高密度形成と磁化特性評価

    橋本靖司, 牧原克典, 大田晃生, 池田弥央, 宮崎誠一

    第79回応用物理学会秋季学術講演会 

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    Event date： 2018.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  99. リモートプラズマによる表面洗浄とSiO2/GaN構造のin-situ形成

    田岡 紀之、グェンスァン チュン、山本 泰史、大田 晃生、山田 永、高橋 言緒、池田 弥央、牧原 克典、宮崎 誠一、清水 三聡

    第79回応用物理学会秋季学術講演会 

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    Event date： 2018.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  100. 光電子エネルギー損失信号による絶縁酸化膜の誘電関数評価

    大田 晃生、池田 弥央、牧原 克典、宮﨑 誠一

    第79回応用物理学会秋季学術講演会 

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    Event date： 2018.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  101. リモートプラズマを用いて形成したSiO2/Ga2O3/GaN構造のPL特性

    高田 昇治、田岡 紀之、大田 晃生、山本 泰史、グェンスァン チュン、山田 永、高橋 言緒、池田 弥央、牧原 克典、清水 三聡、宮崎 誠一

    第79回応用物理学会秋季学術講演会 

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    Event date： 2018.9

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  102. GeコアSi量子トドット/Si量子トドット多重集積構造からの電界電子放出

    二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一

    第79回応用物理学会秋季学術講演会 

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    Event date： 2018.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  103. 真空蒸着によるGe(111)上のAlヘテロエピタキシャル成長

    小林征登、大田晃生、黒澤昌志、洗平昌晃、田岡紀之、池田弥央、牧原克典、宮崎誠一

    第79回応用物理学会秋季学術講演会 

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    Event date： 2018.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  104. Wet-chemical Cleaning of Epitaxial GaN(0001) Surfaces International conference

    2018 International Conference of Solid State of Device and Materials 

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    Event date： 2018.9

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  105. XPS Study of Chemical Bonding Features and Inner Potential at Y2O3/SiO2 Interfaces International conference

    2018 International Conference of Solid State of Device and Materials 

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    Event date： 2018.9

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  106. Characterization of Electron Charging and Local Electron Transport Properties of Si-QDs with Phosphorus Doped Ge Core

    Japan Student Chapter Meeting 2018 in Osaka 

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    Event date： 2018.9

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  107. Formation and Characterization of Si/Ge Quantum Dots for Optoelectronic Application Invited International conference

    International Conference on Processing & Manufacturing of Advanced Materials 

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    Event date： 2018.7

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：France  

  108. Characterization of Electron Field Emission from Multiple-Stacking Si Quantum Dots with Ge Core International conference

    2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2018.7

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  109. Modulation of GaN MOS Interface Properties with Excess Ozone Exposure During Atomic Layer Deposition International conference

    2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2018.7

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  110. ArまたはHe希釈リモート酸素プラズマCVDによって形成したSiO2/GaN界面の構造・特性比較

    グェン スァン チュン、田岡 紀之、大田 晃生、山田 永、高橋 言緒、池田 弥央、牧原 克典、清水 三聡、宮崎 誠一

    シリコン材料・デバイス研究会 

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    Event date： 2018.6

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  111. リモートプラズマ支援CVDにより形成したSiO2/GaN界面の化学結合状態および熱的安定性評価

    松田亮平、大田晃生、田岡紀之、池田弥央、牧原克典、清水三聡、宮崎誠一

    シリコン材料・デバイス研究会 

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    Event date： 2018.6

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  112. X線光電子分光法によるY2O3/SiO2界面におけるシリケート化反応およびダイポールの評価

    藤村 信幸、大田 晃生、池田 弥央、牧原 克典、宮﨑 誠一

    シリコン材料・デバイス研究会 

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    Event date： 2018.6

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  113. Formation Mechanism of SiO2/GaN Interface without Significant Ga -oxidation International conference

    1st Joint ISTDM / ICSI 2018 Conference; 9th International SiGe Technology and Device Meeting (ISTDM)/11th International Conference on Silicon Epitaxy and Heterostructures (ICSI)  

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    Event date： 2018.5

    Language：English   Presentation type：Oral presentation (general)  

    Country：Germany  

  114. Characterization of Electron Charging and Transport Properties of Si-QDs with Phosphorus Doped Ge Core International conference

    1st Joint ISTDM / ICSI 2018 Conference; 9th International SiGe Technology and Device Meeting (ISTDM)/11th International Conference on Silicon Epitaxy and Heterostructures (ICSI)  

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    Event date： 2018.5

    Language：English   Presentation type：Poster presentation  

    Country：Germany  

  115. Electroluminescence from Multiply Stacked Si Quantum Dots with Ge Core by Alternate Carrier Injection International conference

    1st Joint ISTDM / ICSI 2018 Conference; 9th International SiGe Technology and Device Meeting (ISTDM)/11th International Conference on Silicon Epitaxy and Heterostructures (ICSI)  

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    Event date： 2018.5

    Language：English   Presentation type：Oral presentation (general)  

    Country：Germany  

  116. 熱処理によるエピタキシャルAg/Ge(111)構造の表面平坦化とGe析出量制御

    伊藤公一、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮崎誠一

    第65回応用物理学会春季学術講演会 

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    Event date： 2018

    Language：Japanese   Presentation type：Oral presentation (invited, special)  

    Country：Japan  

  117. GaN(0001)面上へのHe希釈リモート酸素プラズマ支援によるSiO2 CVD ― Ar希釈リモート酸素プラズマ支援との違い

    グェンスァンチュン、田岡紀之、大田晃生、山田永、高橋言緒、池田弥央、牧原克典、清水三聡、宮崎誠一

    第65回応用物理学会春季学術講演会 

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    Event date： 2018

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  118. Ge/Si量子ドット上へのSi選択成長と室温PL特性

    藤森俊太郎、山田健太郎、永井僚、池田弥央、牧原克典、宮崎誠一

    第65回応用物理学会春季学術講演会 

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    Event date： 2018

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  119. P添加GeコアSi量子ドットの帯電および電子輸送特性評価

    永井僚、山田健太郎、藤森俊太郎、池田弥央、牧原克典、大田晃生、宮崎誠一

    第65回応用物理学会春季学術講演会 

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    Event date： 2018

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  120. XPSによるY2O3/SiO2界面の化学結合状態および内部電位評価

    藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一

    第65回応用物理学会春季学術講演会 

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    Event date： 2018

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  121. 光電子収率分光法による熱酸化SiO2/Si構造の電子状態計測

    大田晃生、今川拓哉、池田弥央、牧原克典、宮崎誠一

    第65回応用物理学会春季学術講演会 

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    Event date： 2018

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  122. 電子・正孔交互注入によるGeコアSi量子ドット多重集積構造からのエレクトロルミネッセンス

    牧原克典、池田弥央、藤村信幸、大田晃生、宮崎誠一

    第65回応用物理学会春季学術講演会 

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    Event date： 2018

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  123. SiO2/Si構造の真空紫外光電子分光分析

    今川拓哉、大田晃生、田岡紀之、藤村信幸、池田弥央、牧原克典、宮崎誠一

    第65回応用物理学会春季学術講演会 

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    Event date： 2018

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  124. XPSによるY2O3/SiO2界面の化学結合状態および内部電位評価

    藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一

    第65回応用物理学会春季学術講演会 

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    Event date： 2018

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  125. リモートプラズマによって酸化されたn-GaNのPL特性

    高田昇治、山本泰史、田岡紀之、大田晃生、グェンスァンチュン、山田永、高橋言緒、池田弥央、牧原克典、清水三聡、宮崎誠一

    第65回応用物理学会春季学術講演会 

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    Event date： 2018

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  126. Evaluation of Potential Distribution in Multiply-Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy International conference

    11th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date： 2018

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  127. Insulator/GaN Interface Control for Intelligent Power Integrated Circuit International conference

    11th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date： 2018

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：Japan  

  128. Control of Surface Segregated Ultrathin Ge Layer Formation on Ag Surface International conference

    10th Anniversary International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2018)/11th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2018) 

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    Event date： 2018

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  129. Operand Study of Multiple Stacked Si Quantum Dots by Hard X-ray Photoelectron Spectroscopy International conference

    10th Anniversary International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2018)/11th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2018) 

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    Event date： 2018

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  130. Electroluminescence from Si-QDs with Ge Core International conference

    11th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date： 2018

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  131. Insights into Growth of Two-Dimensional Ge Crystal on Epitaxial Ag/Ge(111) by Thermal Annealing International conference

    11th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date： 2018

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  132. XPS Study on High-k/SiO2 Interface -Correlation between Electrical Dipole and Oxygen Density - International conference

    11th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date： 2018

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  133. Carrier Conduction in SiO2/GaN Structure with Abrupt Interface International conference

    The 2018 International Symposium on VLSI Technology, Systems and Applications 

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    Event date： 2018

    Language：English   Presentation type：Oral presentation (general)  

    Country：China  

  134. 磁性AFM探針を用いたFe3Siナノドットの電子輸送特性評価

    武 嘉麟、張 海、古幡 裕志、牧原 克典、池田 弥央、大田 晃生、宮崎 誠一

    第67回応用物理学会春季学術講演会 

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    Event date： 2018

    Language：Japanese  

    Country：Japan  

  135. リモート酸素プラズマ支援CVD SiO2/GaNの化学構造及び電気特性評価

    グェンスァン チュン, 田岡紀之, 大田晃生, 山田永, 高橋言緒, 池田弥央, 牧原克典, 清水三聡, 宮崎誠一

    電子情報通信学会　電子デバイス研究会 

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    Event date： 2017.12

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  136. リモート酸素プラズマによって酸化したGaNの表面構造

    山本泰史、田岡紀之、大田 晃生、グェンスァン チュン、山田永、高橋言緒、池田弥央、牧原克典、清水三聡、宮崎誠一

    先進パワー半導体分科会第4回講演会 

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    Event date： 2017.11

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  137. 高誘電率絶縁膜/SiO2積層構造の光電子分光分析-界面ダイポールと酸素密度の相関-

    藤村 信幸、大田 晃生、池田 弥央、牧原 克典、宮崎 誠一

    応用物理学会SC東海地区学術講演会2017 

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    Event date： 2017.10

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  138. 熱処理がリモートプラズマ CVD SiO2/GaN 構造の化学結合状態及び電気特性に与える影響

    グェンスァン チュン, 田岡紀之, 大田晃生, 山田永, 高橋言緒, 池田弥央, 牧原克典, 清水三聡, 宮崎誠一

    応用物理学会SC東海地区学術講演会2017 

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    Event date： 2017.10

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  139. 硬X線光電子分光法によるSi量子ドット多重集積構造のオペランド分析

    中島 裕太、牧原 克典、大田 晃生、池田 弥央、宮崎 誠一

    応用物理学会SC東海地区学術講演会2017 

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    Event date： 2017.10

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  140. GeコアSi量子ドットのEL特性評価

    山田健太郎、池田弥生、牧原克典、大田晃生、宮崎誠一

    応用物理学会SC東海地区学術講演会2017 

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    Event date： 2017.10

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  141. 入射エネルギー可変の真空紫外光電子分光による固体表面の価電子帯上端位置の計測

    今川 拓哉、大田 晃生、田岡 紀之、藤村 信幸、グェン スァン チュン、池田 弥央、牧原 克典、宮崎 誠一

    応用物理学会SC東海地区学術講演会2017 

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    Event date： 2017.10

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  142. リモートプラズマ酸化したGaNの表面構造と電子状態

    山本泰史、田岡紀之、大田 晃生、グェンスァン チュン、山田永、高橋言緒、池田弥央、牧原克典、清水三聡、宮崎誠一

    応用物理学会SC東海地区学術講演会2017 

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    Event date： 2017.10

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  143. 熱処理によるエピタキシャルAg上へのGe二次元結晶の合成指針の構築

    伊藤公一、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮崎誠一

    応用物理学会SC東海地区学術講演会2017 

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    Event date： 2017.10

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  144. XPSによるHigh-k/SiO2界面のダイポール定量と酸素密度比との相関

    藤村 信幸、大田 晃生、池田 弥央、牧原 克典、宮崎 誠一

    第78回応用物理学会秋季学術講演会 

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    Event date： 2017.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  145. 電子・正孔交互注入によるGeコアSi量子ドット多重集積構造の発光特性

    牧原 克典、池田 弥央、藤村 信幸、大田 晃生、宮崎 誠一

    第78回応用物理学会秋季学術講演会 

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    Event date： 2017.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  146. Study of Wet Chemical Treatments of Epitaxial GaN(0001) Surface

    L. Peng, A. Ohta, N. X. Truyen, M. Ikeda, K. Makihara, N. Taoka, T. Narita,, K. Itoh, D. Kikuta, K. Shiozaki, T. Kachi, and S. Miyazaki

    第78回応用物理学会秋季学術講演会 

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    Event date： 2017.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  147. 真空紫外光電子分光によるGaNの電子親和力評価

    今川 拓哉、大田 晃生、藤村 信幸、グェン スァン チュン、池田 弥央、牧原 克典、加地　徹、塩崎 宏司、宮崎 誠一

    第78回応用物理学会秋季学術講演会 

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    Event date： 2017.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  148. リモート酸素プラズマで形成したGa酸化物/GaN構造のエネルギーバンド構造と電気的特性

    山本泰史、田岡紀之、大田 晃生、グェンスァン チュン、山田永、高橋言緒、池田弥央、牧原克典、清水三聡、宮崎誠一

    第78回応用物理学会秋季学術講演会 

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    Event date： 2017.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  149. 熱処理によるAg/Ge構造の表面平坦化とGe析出量制御

    伊藤公一、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮崎誠一

    第78回応用物理学会秋季学術講演会 

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    Event date： 2017.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  150. リモート酸素プラズマ支援CVD SiO2/GaNの熱安定性

    グェンスァン チュン, 田岡紀之, 大田晃生, 山田永, 高橋言緒, 池田弥央, 牧原克典, 清水三聡, 宮崎誠一

    第78回応用物理学会秋季学術講演会 

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    Event date： 2017.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  151. 高誘電率絶縁膜の電子親和力の決定およびSiO2との界面で生じる電位変化の定量

    藤村 信幸、大田 晃生、池田 弥央、牧原 克典、宮崎 誠一

    2017 年真空・表面科学合同講演会 第37 回表面科学学術講演会・第58 回真空に関する連合講演会 

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    Event date： 2017.8

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  152. リモート酸素プラズマ支援CVDによる急峻SiO2/GaN界面の形成とその電気的特性

    グェンスァン チュン, 田岡紀之, 大田晃生, 山田永, 高橋言緒, 池田弥央, 牧原克典, 清水三聡, 宮崎誠一

    2017 年真空・表面科学合同講演会 第37 回表面科学学術講演会・第58 回真空に関する連合講演会 

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    Event date： 2017.8

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  153. XPSによるHigh-k/SiO2界面の化学構造およびダイポールの評価

    藤村 信幸、大田 晃生、池田 弥央、牧原 克典、宮崎誠一

    電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会 

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    Event date： 2017.6

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  154. エピタキシャルAg(111)上の極薄IV族結晶形成

    伊藤 公一、大田 晃生、黒澤 昌志、洗平 昌晃、池田 弥央、牧原 克典、宮崎 誠一

    電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会 

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    Event date： 2017.6

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  155. 定電圧および定電流印加によるSi酸化薄膜の電気抵抗変化特性評価

    大田 晃生、加藤 祐介、池田 弥央、牧原 克典、宮崎 誠一

    電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会 

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    Event date： 2017.6

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  156. Total Photoelectron Yield Spectroscopy of Electronic States of Oxide Thin Films and Wide Bandgap Semiconductors International conference

    10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  157. Luminescence Studies of High Density Si Quantum Dots with Ge core International conference

    K. Yamada, M. Ikeda, K. Makihara, and S. Miyazaki

    10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2017

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  158. Evaluation of Dielectric Function of Oxide Thin Films from Photoemission Measurements International conference

    T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2017

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  159. Characterization of Field Electron Emission from Multiply-Stacking Si Quantum Dots International conference

    Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2017

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  160. Chemical Analysis of Epitaxial Ag(111) Surface formed on Group-IV Semiconductors International conference

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2017

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  161. Characterization of Remote Plasma CVD SiO2 on GaN(0001) International conference

    N. Truyen, A. Ohta, M. Ikeda, K. Makihara and S. Miyazaki

    10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  162. Potential Change and Electrical Dipole at Ultrathin Oxide/Semiconductor Interfaces as Evaluated by XPS International conference

    N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  163. Formation of Si-based Quantum Dots on Sub-micron patterned Si Substrates International conference

    M. Ikeda, L. Gao, K. Yamada, K. Makihara, A. Ohta, and S. Miyazaki

    10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  164. Formation of Mn-germanide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma International conference

    Y. Wen, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

    8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)/9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016) 

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    Event date： 2017

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  165. Impact of Thermal Annealing on Mophology and Chemical Bonding Features at Epitaxial Ag(111) Surface Grown on Ge(111) International conference

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)/9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016) 

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    Event date： 2017

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  166. PYS Study on Energy Distributions of Defect States in Remote O2 Plasma Enhanced CVD SiO2/GaN Structure International conference

    N. Truyen, A. Ohta, K. Makihara, M. Ikeda and S. Miyazaki

    International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)/9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016) 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  167. Total Photoelectron Yield Spectroscopy of Electronic States of GaN Surface International conference

    A. Ohta, N. Truyen, N. Fujimura, M. Ikeda, K. Makihara, and S. Miyazaki

    8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)/9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016) 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  168. Ge上にエピタキシャル成長したAg(111)表面の平坦化および化学構造評価

    伊藤 公一、大田 晃生、黒澤 昌志、洗平 昌晃、池田 弥央、牧原 克典、宮崎 誠一

    第64回応用物理学会春季学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  169. リモート酸素プラズマによるGaN表面酸化

    山本 泰史、田岡 紀之、大田 晃生、グェンスァンチュン、山田 永、高橋 言緒、池田 弥央、牧原 克典、清水 三聡、宮崎 誠一

    第64回応用物理学会春季学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  170. HfO2/SiO2/Si構造の光電子分光分析－界面ダイポールの定量－

    藤村信幸、大田晃生、池田弥生、牧原克典、宮崎誠一

    第16回日本表面科学会中部支部学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  171. 光電子分光法によるリモートプラズマCVD SiO2/GaNの化学結合状態および電子占有欠陥評価

    グェンチュンスァン、大田晃生、牧原克典、池田弥央、宮崎誠一

    電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― (第22回研究会) 

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    Event date： 2017

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  172. X線光電子分光法による極薄酸化物積層構造の電位変化・ダイポール評価

    藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一

    電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― (第22回研究会) 

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    Event date： 2017

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  173. ドライおよびN2O酸化により形成したSiO2/4H-SiCの電子占有欠陥評価

    渡辺 浩成、大田 晃生、池田 弥央、牧原 克典、森 大輔、寺尾 豊、宮崎 誠一

    第64回応用物理学会春季学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  174. 硬X線光電子分光を用いたSi量子ドット多重集積構造の電位分布評価

    中島 裕太、竹内 大智、牧原 克典、大田 晃生、池田 弥央、宮崎 誠一

    第64回応用物理学会春季学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  175. Ge コアSi 量子ドットの発光特性評価

    山田 健太郎、牧原 克典、池田 弥央、大田 晃生、宮崎 誠一

    第17回日本表面科学会中部支部学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  176. Tiナノドットを埋め込んだSiOx膜の電気抵抗変化特性－定電圧および定電流印加による特性制御－

    加藤 祐介、大田 晃生、池田 弥央、牧原 克典、宮崎 誠一

    第64回応用物理学会春季学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  177. 硬X線光電子分光法によるSi-MOSダイオードのオペランド分析 －電位変化および化学結合状態評価－

    大田 晃生、村上 秀樹、池田 弥央、牧原 克典、池永 英司、宮崎 誠一

    第64回応用物理学会春季学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  178. XPSによるHfO2の電子親和力と界面ダイポールの定量

    藤村 信幸、大田 晃生、池田 弥央、牧原 克典、宮崎 誠一

    第64回応用物理学会春季学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  179. Si 細線構造への高密度 Si 量子ドット形成と発光特性

    高 磊、池田 弥央、山田 健太郎、牧原 克典、大田 晃生、宮崎 誠一

    第64回応用物理学会春季学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  180. リモートプラズマ支援 CVD SiO2/GaN の界面特性

    グェンスァンチュン、田岡 紀之、大田 晃生、山本 泰史、山田 永、高橋 言緒、池田 弥央、牧原 克典、清水 三聡、宮崎 誠一

    第64回応用物理学会春季学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  181. Abrupt SiO2/GaN Interface Properties Formed by Remote Plasma Assisted CVD International conference

    2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Gyeongju, Korea   Country：Korea, Republic of  

  182. High Density Formation of and Light Emission from Si-Quantum Dots with Ge core International conference

    S. Miyazaki, K. Yamada, M. Ikeda, and K. Makihara

    MRS spring Meeting 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Phoenix   Country：United States  

  183. Potential Changes and Chemical Bonding Features for Si-MOS Diodes as Evaluated from HAXPES Analysis International conference

    A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, S. Miyazaki

    20th Conference on Insulating Films on Semiconductors 

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    Event date： 2017

    Language：English   Presentation type：Poster presentation  

    Venue：Potsdam   Country：Germany  

  184. Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy International conference

    A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    20th Conference on Insulating Films on Semiconductors 

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    Event date： 2017

    Language：English   Presentation type：Poster presentation  

    Venue：Potsdam   Country：Germany  

  185. Characterization of Electroluminescence from Si-QDs with Ge Core International conference

    K. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    The 10th International Conference on Silicon Epitaxy and heterostructures 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Coventry, UK   Country：United Kingdom  

  186. Evaluation of Potential Distribution in Multiple Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy International conference

    Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    The 10th International Conference on Silicon Epitaxy and heterostructures 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Coventry, UK   Country：United Kingdom  

  187. Fabrication and Magnetoelectronic Transport Fe3Si-Nanodots on Ultrathin SiO2 International conference

    H. Zhang, K. Makihara, A. Ohta, M. Ikeda, and S, Miyazaki

    The 10th International Conference on Silicon Epitaxy and heterostructures 

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    Event date： 2017

    Language：English   Presentation type：Poster presentation  

    Venue：Coventry, UK   Country：United Kingdom  

  188. Magnetoelectronic Transport of Double Stack FePt Nanodots International conference

    2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Gyeongju, Korea   Country：Korea, Republic of  

  189. Oxidation of GaN surface by remote oxygen plasma International conference

    T. Yamamoto, N. Taoka, A. Ohta1, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki

    39th International Symposium on Dry Process (DPS) 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  190. Ultrathin Ge Growth on Flat Ag Surface in Hetero-Epitaxial Ag/Ge Structure by Annealing International conference

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    30th International Microprocesses and Nanotechnology Conference 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  191. Direct Observation of Electrical Dipole and Atomic Density at High-k Dielectrics/SiO2 Interface International conference

    N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    2017 International Conference on Solid State Devices and Materials 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  192. High thermal stability of abrupt SiO2/GaN interface with low interface state density International conference

    N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki

    2017 International Conference on Solid State Devices and Materials 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  193. Electroluminescence of Super-atom-like Si-Ge based Quantum Dots Floating Gate International conference

    K. Makihara, M. Ikeda, N. Fujimura, A. Ohta, and S. Miyazaki

    2017 International Conference on Solid State Devices and Materials 

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    Event date： 2017

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  194. Growth of 2D Crystal of Group-IV Elements on Epitaxial Ag(111) International conference

    K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki

    2017 International Conference on Solid State Devices and Materials 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  195. High Density Formation of Fe-silicide Nanodots and Their Magnetic Properties International conference

    S. Ishida, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

    IUMRS-ICAM 2017 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Venue：Phoenix   Country：Japan  

  196. Energy Band Structure of Ga-oxide/GaN Interface Formed by Remote O2 Plasma International conference

    T. Yamamoto, N. Taoka, A. Ohta1, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu, and S. Miyazaki

    2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF) 

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    Event date： 2017

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  197. リモートプラズマ支援CVDによる低欠陥密度SiO2/GaN界面の形成

    グェンスァンチュン, 田岡紀之, 大田晃生, 山田永, 高橋言緒, 池田弥央, 牧原克典, 清水三聡, 宮崎誠一

    第17回日本表面科学会中部支部学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  198. 高誘電率絶縁膜/SiO2界面のダイポール形成と化学構造の関係

    藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一

    第17回日本表面科学会中部支部学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  199. 高密度GeコアSi量子ドットの室温EL特性評価

    山田健太郎、牧原克典、池田弥央、大田晃生、宮崎誠一

    第17回日本表面科学会中部支部学術講演会 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  200. 二次元結晶合成に向けたAg上Ge極薄膜の形成

    伊藤公一、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮崎誠一

    電子デバイス界面テクノロジー研究会 (第23回研究会) 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  201. XPSによる極薄high-k/SiO2ゲートスタック構造の電子状態および化学結合状態評価

    藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一

    電子デバイス界面テクノロジー研究会 (第23回研究会) 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  202. ALD-Al2O3/GaN界面における伝導帯端近傍の界面準位密度の低減

    田岡紀之, 小林貴之, 中村昌幸, 佐川達郎, グェンスァンチュン, 大田晃生, 山田永, 高橋言緒, 池田弥央, 牧原克典, 久保俊晴, 山田寿一, 江川孝志, 宮崎誠一, 本山愼一, 清水三聡

    電子デバイス界面テクノロジー研究会 (第23回研究会) 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  203. プラズマ酸化で形成したGa酸化物薄膜/GaN構造のエネルギーバンド構造と電気的界面特性

    山本泰史, 田岡紀之, 大田晃生, グェンスァンチュン, 山田永, 高橋言緒, 池田弥央, 牧原克典, 清水三聡, 宮崎誠一

    電子デバイス界面テクノロジー研究会 (第23回研究会) 

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    Event date： 2017

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  204. Relationships between Al2O3/GaN Interface Properties near Conduction Band Edge and Post-Deposition Annealing Temperatures International conference

    N. Taoka, T. Kobayashi, M. Nakamura, T. Sagawa, N. X. Truyen, A. Ohta, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, T. Kubo, T. Yamada, T. Egawa, S. Miyazaki, and M. Shimizu

    48th IEEE Semiconductor Interface Specialists Conference 

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    Event date： 2017

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  205. XPS Study on Evaluation of Electrical Dipole and Atomic Density Ratio at Ultrathin High-k Dielectrics/SiO2 Interface International conference

    N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki

    2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF) 

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    Event date： 2017

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  206. Electrical properties of SiO2/GaN interfaces formed by remote oxygen plasma mixed with He or Ar International conference

    N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu, and S. Miyazaki

    2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF) 

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    Event date： 2017

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  207. 光電子分光分析によるSiO2/4H-SiCの電子状態評価

    渡辺浩成、大田晃生、池田弥生、牧原克典、宮崎誠一

    第4回応用物理学会SC東海地区学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  208. GeコアSi量子ドット／Si量子ドット多重集積構造のEL特性

    竹内大智、山田健太郎、牧原克典、池田弥央、大田晃生、宮崎誠一

    第77回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  209. リモートプラズマCVD SiO2/GaN界面の光電子分光分析

    グェンスァン チュン，大田 晃生，牧原 克典，池田 弥央，宮崎 誠一

    第77回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  210. XPS Study on Dielectric Function of Thermally-grown SiO2 International conference

    T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    JSPS Meeting 2016 Workshop on Atomically Controlled Processing for Ultra-large Scale Integration 

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    Event date： 2016

    Language：English   Presentation type：Poster presentation  

    Country：Germany  

  211. Effects of Hydrogen Plasma Treatment on Optical Properties of LSAT ((LaAlO3)0.3-(Sr2AlTaO6)0.7 International conference

    D. R. Purba, K. Makihara, A. Rusydi, S. Miyazaki, and Y. Darma

    The 2nd Materials Research Society of Indonesia (MRS-Id) Meeting 

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    Event date： 2016

    Language：English   Presentation type：Poster presentation  

    Country：Indonesia  

  212. Formation and Characterization of Si Quantum Dots with Ge Core for Functional Devices Invited International conference

    S. Miyazaki, D. Takeuchi, M. Ikeda, and K. Makihara

    2016 International Conference on Solid State Devices and Materials  

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  213. Processing and Characterization of Si/Ge Quantum Dots Invited International conference

    S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda

    Int. Electron Devices Meeting 2016 (IEDM) 

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  214. GeコアSi量子ドットのエレクトロルミネッセンス特性

    山田 健太郎、池田 弥央、牧原 克典、宮崎 誠一

    第77回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  215. HfO2/SiO2/Si(100)構造における内部電位分布、界面ダイポールの定量評価

    藤村信幸、大田晃生、池田弥生、牧原克典、宮崎誠一

    第77回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  216. FePtナノドットスタック構造における磁場印加後の電気伝導特性評価

    河瀨平雅、牧原克典、大田晃生 、池田弥央、宮崎誠一

    第77回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  217. Ta酸化物ナノドットの高密度・一括形成 (II)

    王亜萍、竹内大智、池田弥央、大田晃生、牧原克典、宮崎誠一

    第77回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  218. X線光電子分光法による熱酸化SiO2およびGeO2薄膜の誘電関数評価

    山本泰史、大田晃生、池田弥央、牧原克典、宮崎誠一

    第77回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  219. リモートプラズマCVD SiO2/GaN界面の光電子分光分析

    グェンスァン チュン，大田 晃生，牧原 克典，池田 弥央，宮崎 誠一

    第77回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  220. Characterization of Electrical Dipole Formed at HfO2/SiO2 and SiO2/Si Interfaces Using by XPS International conference

    N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    JSPS Meeting 2016 : Workshop on Atomically Controlled Processing for Ultra-large Scale Integration 

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    Event date： 2016

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  221. Study of Electron Field Emission from Multiply-Stacking Si Quantum Dots International conference

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki

    9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar" Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  222. Determination of Electron Affinity of Si-based Materials using by X-ray Photoelectron Spectroscopy International conference

    N. Fujimura, A. Ohta, K. Makihara and S. Miyazaki

    9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar" Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  223. Impact of Ge Capping Layer on Ta Nanodots Formation Induced by Remote Hydrogen Plasma International conference

    Y. Wang, D. Takeuchi, M. Ikeda, K. Makihara, A. Ohta, and S. Miyazaki

    9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar" Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2016

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  224. Evaluation of Electronic States of Thermally-grown SiO2/4H-SiC International conference

    H. Watanabe, A. Ohta, N, Fujimura, K. Makihara, and S. Miyazaki

    9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar" Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2016

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  225. Characterization of Electronic Charged States of FePt-NDs Stacked Structures by Kelvin Force Microscopy International conference

    T. Kawase, Y. Mitsuyuki, A. Ohta, K. Makihara, T. Kato, S. Iwata and S. Miyazaki

    9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar" Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2016

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  226. High Density Ti Nanodots Formation and Improvement of ReRAM Characteristics by Embedding Ti Nanodots International conference

    Y. Kato, A. Ohta, K. Makihara and S. Miyazaki

    9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar" Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2016

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  227. Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Emission Properties International conference

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki

    7th International Symposium on Control of Semiconductor Interfaces and 8th International SiGe Technology and Device Meeting joint meeting (ISCSI-VII/ISTDM 2016)  

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  228. Determination of Energy Band Profile of Thermally-grown SiO2/4H-SiC Structure Using XPS International conference

    H. Watanabe, A. Ohta, K. Makihara, and S. Miyazaki

    7th International Symposium on Control of Semiconductor Interfaces and 8th International SiGe Technology and Device Meeting joint meeting (ISCSI-VII/ISTDM 2016)  

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  229. Electron Transport Properties of High Density FePt-NDs Stacked Structures International conference

    T. Kawase, Y. Mitsuyuki, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

    7th International Symposium on Control of Semiconductor Interfaces and 8th International SiGe Technology and Device Meeting joint meeting (ISCSI-VII/ISTDM 2016)  

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  230. Formation and Electron Transport Properties of Fe3Si Nanodots on Ultrathin SiO2 International conference

    Hai Zhang, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta and Seiichi Miyazaki

    2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  231. Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors International conference

    Yusuke Kato, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, and Seiichi Miyazaki

    2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  232. Formation of Fe3Si-Nanodots on Ultrathin SiO2 Induced by H2-plasma Treatment and Their Magnetic-Field Dependent Electron Transport Properties International conference

    H. Zhang, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki

    Asia-Pacific Conference on Semiconducting Silicides and Related Materials  

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  233. Magnetotransport Properties of FePt Alloy-NDs Stacked Structures International conference

    K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki

    2016 International Conference on Solid State Devices and Materials 

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  234. Evaluation of Potential Change and Electrical Dipole in HfO2/SiO2/Si Structure International conference

    2016 International Conference on Solid State Devices and Materials 

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  235. Evaluation of Dielectric Function of Thermally-grown SiO2 and GeO2 from Energy Loss Signals for XPS Core-line Photoelectrons International conference

    T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    230th Meeting of The Electrochemical Society (ECS) 

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  236. Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core International conference

    K. Yamada, K. Kondo, M. Ikeda, K. Makihara, and S. Miyazaki

    230th Meeting of The Electrochemical Society (ECS) 

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  237. Low Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation International conference

    Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki

    29th International Microprocesses and Nanotechnology Conference 

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  238. High Density Formation of Ta/Ta-Oxide Core-Shell Nanodots International conference

    Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    29th International Microprocesses and Nanotechnology Conference 

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    Event date： 2016

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  239. 熱酸化SiO2/4H-SiC Si面およびC面の電子占有欠陥および化学構造評価

    渡辺浩成、大田晃生、池田弥生、牧原克典、森大輔、寺尾豊、宮崎誠一

    第16回日本表面科学会中部支部学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  240. 外部磁場が高密度FePtナノドットスタック構造の電子輸送特性に及ぼす影響

    河瀨平雅、満行優介、大田晃生 、牧原克典 、宮崎誠一

    第76回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  241. Ni/SiOx/Ti Nanodots/SiOx/Niダイオードの抵抗変化特性評価

    加藤祐介、荒井崇、大田晃生、牧原克典、宮崎誠一

    第76回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  242. KFMによるFePtナノドットスタック構造の局所帯電評価

    満行優介、大田晃央、牧原克典、宮崎誠一

    第76回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  243. GeコアSi量子ドットからの発光スペクトル―温度依存性

    近藤圭悟、牧原克典、宮崎誠一

    第76回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  244. X線光電子分光法によるSiおよびSiO2の価電子帯上端位置の決定

    藤村信幸、大田晃生、牧原克典、宮崎誠一

    第76回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  245. P添加Si量子ドット多重集積構造の電界電子放出特性評価

    竹内大智、牧原克典、大田晃生、宮崎誠一

    第76回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  246. リモート水素プラズマ支援による高密度形成したFeシリサイドナノドットの構造および磁化特性評価

    張海、牧原克典、大田晃生、壁谷悠希、宮崎誠一

    第76回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  247. X線光電子分光法によるSiO2/4H-SiCエネルギーバンドプロファイルの決定

    渡辺浩成、大田晃生、藤村信幸、牧原克典、宮崎誠一

    応用物理学会SC東海地区学術講演会2015 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  248. iナノドットの高密度一括形成とその埋め込みによる抵抗変化特性の向上

    加藤祐介、大田晃生、牧原克典、宮崎誠一

    応用物理学会SC東海地区学術講演会2015 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  249. GeコアSi量子ドットからのフォトルミネッセンス特性―温度依存性

    近藤圭悟、牧原克典、宮崎誠一

    応用物理学会SC東海地区学術講演会2015 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  250. XPSによるSi系材料の電子親和力決定手法の検討

    藤村信幸、大田晃生、牧原克典、宮崎誠一

    応用物理学会SC東海地区学術講演会2015 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  251. リモート水素プラズマ支援による高密度形成したFe3Siナノドットの結晶構造および磁化特性評価

    張海、牧原克典、大田晃生、壁谷悠希、宮崎誠一

    応用物理学会SC東海地区学術講演会2015 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  252. Si量子ドット多重集積構造からの電子放出特性評価

    竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一

    第15回日本表面科学会中部支部研究会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  253. SiO2/4H-SiC構造の電子障壁高さの決定と欠陥準位密度の深さ方向分析

    渡辺浩成、大田晃生、牧原克典、宮崎誠一

    電子デバイス界面テクノロジー研究会 (第21回研究会) 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  254. SiOx膜へのTiナノドットの埋め込みがその抵抗変化特性に与える影響

    加藤祐介、大田晃生、牧原克典、宮崎誠一

    電子デバイス界面テクノロジー研究会 (第21回研究会) 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  255. Si, 4H-SiCおよびSiO2の価電子帯上端位置と電子親和力の評価

    藤村信幸、大田晃生、牧原克典、宮崎誠一

    電子デバイス界面テクノロジー研究会 (第21回研究会) 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  256. リモート水素プラズマ照射による4H-SiC(0001)の表面改質

    グェンスァンチュン, 竹内大智, 大田晃生, 池田弥央, 牧原克典, 宮崎誠一

    電子デバイス界面テクノロジー研究会 (第21回研究会) 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  257. Ti系薄膜およびTiナノドットを埋め込んだ SiOx膜の抵抗変化特性評価

    加藤祐介、大田晃生、牧原克典、宮崎誠一

    第63回応用物理学会春季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  258. 磁性AFM探針を用いたFe3Siナノドットの電子輸送特性評価

    張海、満行優介、牧原克典、池田弥央、大田晃生、宮崎誠一

    第63回応用物理学会春季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  259. ウェット酸化により形成したSiO2/4H-SiCの電子状態評価 (II)

    渡辺浩成、大田晃生、藤村信幸、牧原克典、宮崎誠一

    第63回応用物理学会春季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  260. FePt ナノドットスタック構造における磁気伝導特性

    満行優介、河瀬平雅、牧原克典、大田晃生、池田弥央、宮崎誠一

    第63回応用物理学会春季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  261. 磁性AFM探針を用いたFe3Siナノドットの電子輸送特性評価

    張海、満行優介、牧原克典、池田弥央、大田晃生、宮崎誠一

    第63回応用物理学会春季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  262. GeコアSi量子ドットにおけるGeコアサイズがPL特性に及ぼす影響

    山田健太郎、近藤圭悟、池田弥央、牧原克典、宮崎誠一

    第63回応用物理学会春季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  263. GeコアSi量子ドットの発光メカニズム

    近藤圭悟、池田弥央、牧原克典、宮崎誠一

    第63回応用物理学会春季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  264. XPSによるSiO2/半導体界面の電位変化およびダイポールの定量

    藤村信幸、大田晃生、渡辺浩成、牧原克典、宮崎誠一

    電子情報通信学会(SDM) [シリコン材料・デバイス] 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  265. リモート酸素プラズマ支援CVDによる低温SiO2薄膜形成

    グェンスァンチュン, 藤村信幸, 竹内大智, 大田晃生, 牧原克典, 池田弥央, 宮崎誠一

    シリコン材料・デバイス研究会(SDM) 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  266. 4H-SiC Si面およびC面上に成長した熱酸化膜の光電子収率分光法による電子占有欠陥評価

    渡辺浩成、大田晃生、牧原克典、池田弥央、宮崎誠一

    第77回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  267. Ti薄膜およびTiナノドットを埋め込んだNi/SiOx/Niの電気抵抗スイッチング

    加藤祐介、大田晃生、池田弥央、牧原克典、宮崎誠一

    第4回応用物理学会SC東海地区学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  268. XPSを用いたSiO2およびGeO2の誘電関数・光学定数の評価手法の検討

    山本泰史、大田晃生、池田弥央、牧原克典、宮崎誠一

    第4回応用物理学会SC東海地区学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  269. SiおよびSiGe上に形成したAg表面の化学分析

    伊藤公一、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮崎誠一

    第4回応用物理学会SC東海地区学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  270. XPSによるSiO2/SiおよびHfO2/SiO2界面のダイポールの定量

    藤村信幸、大田晃生、池田弥生、牧原克典、宮崎誠一

    第4回応用物理学会SC東海地区学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  271. 光電子収率分光法によるリモートプラズマCVD SiO2/GaN界面の電子占有欠陥評価

    グェン スァンチュン, 大田晃生, 牧原克典, 池田弥央, 宮崎誠一

    第4回応用物理学会SC東海地区学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  272. シリコン酸化薄膜の電気抵抗スイッチングおよび欠陥準位密度評価

    加藤祐介、大田晃生、池田弥央、牧原克典、宮崎誠一

    第36回 表面科学学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  273. IV 族半導体上に蒸着したAg 薄膜の化学構造評価と反応制御

    伊藤公一、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮崎誠一

    第36回 表面科学学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  274. Si細線構造への高密度Si量子ドット形成

    高磊、竹内大智、牧原克典、池田弥央、大田晃生、宮崎誠一

    2016真空・表面科学合同講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Poster presentation  

    Country：Japan  

  275. Si系量子ドット多重集積構造からの電界電子放出特性

    中島裕太、大田晃生、竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一

    2016真空・表面科学合同講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  276. HAXPES によるSi-MOS キャパシタの化学結合状態および内部電位の深さ方向分析

    大田晃生、村上秀樹、池田弥央、牧原克典、池永英司、宮崎誠一

    2016真空・表面科学合同講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  277. ウェット酸化により形成したSiO2/4H-SiCの電子状態評価

    渡辺浩成、大田晃生、藤村信幸、牧原克典、宮崎誠一

    第76回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  278. A Study of Magnetoelectronic Transport in Double Stack FePt Nanodots on Ultrathin SiO2/c-Si for Functional Memories International conference

    Seiichi Miyazaki, Yusuke Mitsuyuki, Taiga Kawase, Mitsuhisa Ikeda, and Katsunori Makihara

    E-MRS 2016 Fall Meeting 

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    Event date： 2016

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  279. Ta酸化物ナノドットの高密度一括形成

    王亜萍、竹内大智、大田晃生、牧原克典、宮崎誠一

    第76回応用物理学会秋季学術講演会 

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    Event date： 2016

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  280. Si量子ドット多重集積構造の電界電子放出特性評価

    竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一

    第62回春季応用物理学会 

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    Event date： 2015.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  281. 光電子収率分光法によるSiO2/SiC構造の電子状態計測(2)

    大田晃生、渡邊浩成、グェンスァンチュン、牧原克典、宮崎誠一

    第62回春季応用物理学会 

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    Event date： 2015.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  282. リモート水素プラズマ支援によるTaナノドットの高密度一括形成

    王亜萍、牧原克典、大田晃生、竹内大智、宮崎誠一

    第62回春季応用物理学会 

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    Event date： 2015.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  283. リモート水素プラズマ処理した4H-SiC表面の化学構造および電子状態分析

    グェンスァンチュン、大田晃生、竹内大智、張海、牧原克典、宮崎誠一

    第62回春季応用物理学会 

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    Event date： 2015.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  284. 高密度FePtナノドットスタック構造の電子輸送特性

    壁谷悠希、満行優介、張海、大田晃生、牧原克典、宮崎誠一

    第62回春季応用物理学会 

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    Event date： 2015.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  285. リモート水素プラズマ支援によるFeシリサイドナノドットの高密度一括形成と磁化特性評価

    張海、牧原克典、大田晃生、壁谷悠希、宮崎誠一

    第62回春季応用物理学会 

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    Event date： 2015.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  286. P添加がGeコアSi量子ドットのPL特性に及ぼす影響

    近藤圭悟、牧原克典、宮崎誠一

    第62回春季応用物理学会 

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    Event date： 2015.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  287. 不純物添加がSi量子ドット多重集積構造のEL特性に及ぼす影響

    山田敬久、牧原克典、池田弥央、宮崎誠一

    第62回春季応用物理学会 

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    Event date： 2015.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  288. 外部磁場がFePt合金ナノドットへの電子注入特性に及ぼす影響

    満行優介、壁谷悠希、張海、大田晃生、牧原克典、宮崎誠一

    第62回春季応用物理学会 

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    Event date： 2015.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  289. Photoluminescence Properties of Si Quantum Dots with Ge Core International conference

    K. Kondo, K. Makihara and S. Miyazaki

    8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2015.1

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  290. Si-rich酸化膜へのMnナノドット埋め込みが抵抗変化特性へ及ぼす影響

    荒井崇、大田晃生、牧原克典、宮崎誠一

    ゲートスタック研究会 (第20回研究会) 

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    Event date： 2015.1

    Language：Japanese   Presentation type：Poster presentation  

    Venue：東レ研修センター   Country：Japan  

  291. Characterization of Electroluminescence from Multiply-Stack of Doped Si Quantum Dots International conference

    T. Yamada, K. Makihara, M. Ikada and S. Miyazaki

    8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2015.1

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  292. Characterization of Electron Field Emission from High Density Self-aligned Si-based Quantum Dots International conference

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikada and S. Miyazaki

    8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2015.1

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  293. Impact of Post Metallization Annealing on Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack International conference

    A. Ohta, H. Murakami, K. Makihara and S. Miyazaki

    8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2015.1

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  294. High Density Formation of Fe-Silicide Nanodots Induced by Remote Hydrogen Plasma International conference

    H. Zhang, K. Makihara, A. Ohta, M. Ikada and S. Miyazaki

    8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2015.1

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  295. High Density Formation of Mn-Ge Nanodots Induced by Remote Hydrogen Plasma International conference

    Y. Wen, K. Makihara, A. Ohta and S. Miyazaki

    8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2015.1

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  296. Impact of Magnetic-Field Application on Electron Transport Through FePt Alloy Nanodots International conference

    Y. Kabeya, H. Zhang, A. Ohta, K. Makihara and S. Miyazaki

    8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2015.1

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  297. Formation and Characterization of High Density FePt Alloy Nanodots Induced by Remote Hydrogen Plasma International conference

    Y. Mitsuyuki, Y. Kabeya, K. Makihara, T. Kato, S. Iwata and S. Miyazaki

    8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2015.1

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  298. Impact of Remote Hydrogen Plasma on Micro-roughness and Electronic States at 4H-SiC(0001) Surface International conference

    T. Nguyen, A. Ohta, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki

    8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2015.1

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  299. Magnetic-Field Dependence of Electron Transport Through FePt Alloy-NDs on Ultrathin SiO2 International conference

    K. Makihara, Y. Kabeya, Y. Mitsuyuki, A. Ohta, Y. Darma, and S. Miyazaki

    8th International Conference on Materials for Advanced Technologies of the Materials Research Society of Singapore & 16th IUMRS-International Conference in Asia 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：Singapore  

  300. Characterization of Electron Field Emission from High Density Self-Aligned Si-Based Quantum Dots International conference

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

    7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nano materials / 8th International Conference on Plasmas-Nano Technology & Science (ISPlasma2015 / IC-PLANTS2015) 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  301. Formation and Characterization of High Density FeSi Nanodots on SiO2 Induced by Remote H2 Plasma International conference

    H. Zhang, K. Makihara, A. Ohta and S. Miyazaki

    7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nano materials / 8th International Conference on Plasmas-Nano Technology & Science (ISPlasma2015 / IC-PLANTS2015) 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  302. Study on Electroluminescence from Multiply-Stacking Valencey Controlled Si Quantum Dots International conference

    T. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9) 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：Canada  

  303. Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Field Emission Properties International conference

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

    The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：Canada  

  304. Electronic Defect States in Thermally-grown SiO2/4H-SiC Structure Measured by Total Photoelectron Yield Spectroscopy International conference

    A. Ohta, K. Makihara, and S. Miyazaki

    19th biannual Conference on Insulating Films on Semiconductors 2015 (INFOS2015) 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：Italy  

  305. Electron Transport Properties of High Density FePt-NDs Stacked Structures International conference

    Y. Mitsuyuki, K. Makihara, A. Ohta and S. Miyazaki

    2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2015) 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  306. Effect of P-doping on Photoluminescence Properties of Si Quantum Dots with Ge Core International conference

    K. Kondo, K. Makihara, A. Ohta and S. Miyazaki

    2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015) 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  307. Impact of Magnetic-Field Application on Electron Transport Through FePt-NDs Stacked Structures International conference

    Y. Mitsuyuki, K. Makihara, A. Ohta and S. Miyazaki

    JSPS International Core-to-Core Program Workshop, Atomically Controlled Processing for Ultra-large Scale Integration 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：France  

  308. Characterization of Field Emission Properties from Multiply-Stacking Si Quantum Dots International conference

    D. Takeuchi, K. Makihara, A. Ohta and S. Miyazaki

    JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：France  

  309. Impact of Remote H2 Plasma on Surface and Electronic Structures of 4H-SiC(0001) International conference

    T. Nguyen, A. Ohta, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki

    The 21st Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & The Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  310. High Density Formation of Fe silicide-nanodots on SiO2 Induced by Remote H2-plasma International conference

    H. Zhang, A. Ohta, K. Makihara and S. Miyazaki

    The 21st Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & The Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  311. High Density Formation of Ta Nanodots Induced by Remote Hydrogen Plasma International conference

    Y. Wang, D. Takeuchi, K. Makihara, A. Ohta, and S. Miyazaki

    68th Annual Gaseous Electronics Conferences/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  312. High Density Formation of Fe3Si-nanodots on ultrathin SiO2 Induced by Remote Hydrogen Plasma International conference

    H. Zhang, A. Ohta, K. Makihara and S. Miyazaki

    The 17th Annual Conference and 6thInternational Conference of the Chinese Society of Micro-Nano Technology(CSMNT2015) 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：China  

  313. Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-Grown SiO2/4H-SiC Structure International conference

    H. Watanabe, A. Ohta, K. Makihara, and S. Miyazaki

    228th Meeting of The Electrochemical Society (ECS) 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  314. Resistive Switching Characteristics of Si-rich Oxides with Embedding Ti Nanodots International conference

    Y. Kato, T. Arai, A. Ohta, K. Makihara and S. Miyazaki

    228th Meeting of The Electrochemical Society (ECS) 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  315. Photoemission Study on Chemical Bonding Features of Thermally-grown SiO2/4H-SiC Structure International conference

    H. Watanabe, A. Ohta, K. Makihara, and S. Miyazaki

    2015 International Workshop on Dielectric Thin Films for Future Electron Devices (IWDTF) 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  316. Formation of High Density Ti Nanodots and Evaluation of Resistive Switching Properties of SiOx-ReRAMs with Ti Nanodots International conference

    Y. Kato, A. Ohta, K. Makihara and S. Miyazaki

    2015 International Workshop on Dielectric Thin Films for Future Electron Devices (IWDTF) 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  317. Evaluation of Valence Band Maximum and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS International conference

    N. Fujimura, A. Ohta, K. Makihara and S. Miyazaki

    2015 International Workshop on Dielectric Thin Films for Future Electron Devices (IWDTF) 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  318. High Density Formation of Fe-silicide Nanodots Induced by Remote H2 Plasma and Characterization of Their Crystalline Structure and Magnetic Properties International conference

    H. Zhang, A. Ohta, K. Makihara and S. Miyazaki

    The 37th International Symposium on Dry Process (DPS2015) 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  319. Formation of Mn-Ge Nanodots Induced by Remote Hydrogen Plasma International conference

    Y. Wen, K. Makihara, A. Ohta and S. Miyazaki

    28th International Microprocesses and Nanotechnology Conference (MNC) 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  320. Impact of Embedded Mn-Nanodots on Resistive Switching Properties of Si-rich Oxides International conference

    T. Arai, A. Ohta, K. Makihara and S. Miyazaki

    28th International Microprocesses and Nanotechnology Conference (MNC) 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  321. Formation and Characterization of High Density FePt Nanodots on SiO2 Induced by Remote Hydrogen International conference

    K. Makihara, Y. Kabeya, A. Ohta, T. Kato, A. Iwata and S. Miyazaki

    2015 International Conference on Solid State Devices and Materials (SSDM 2015) 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  322. Cleaning of 4H-SiC(0001) Surface by using Remote Hydrogen Plasma International conference

    T. Nguyen, D. Takeuchi, A. Ohta, K. Makihara, and S. Miyazaki

    8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016) 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  323. Self-assembling Formation of Ta Nanodots Induced by Remote Hydrogen Plasma from Ge/Ta Bi-layer Stack International conference

    Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki

    8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016) 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  324. Impact of Magnetic-Field Application on Electron Charging Characteristics of FePt Nanodots International conference

    T. Kawase, Y. Mitsuyuki, A. Ohta, K. Makihara, T. Kato, S. Iwata, and S. Miyazaki

    8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016) 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  325. Formation of High Density Ta Oxide Nanodots International conference

    Y. Wang, D. Takeuchi, A. Ohta, K. Makihara, and S. Miyazaki

    8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016) 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  326. Effect of Ge Stacked Layer on Ti Nanodots Formation From Metal Thin Films by Remote Hydrogen Plasma Exposure International conference

    Y. Kato, A. Ohta, K. Makihara, and S. Miyazaki

    8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) / 9th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2016) 

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    Event date： 2015

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  327. Tiナノドットを埋め込んだSiリッチ酸化膜の抵抗変化特性

    加藤祐介、荒井崇、大田晃生、牧原克典、宮崎誠一

    電子情報通信学会(SDM) [シリコン材料・デバイス] 

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    Event date： 2015

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  328. A Study of Magnetoelectronic Transport in Double Stack FePt Nanodots on Ultrathin SiO2/c-Si for Functional Memories International conference

    S. Miyazaki, Y. Kabeya, Y. Mitsuyuki and K. Makihara

    MRS 2015 Fall Meeting 

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    Event date： 2015

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  329. 光電子分光法による熱酸化SiO2/4H-SiCの化学結合状態および欠陥準位密度評価

    渡辺浩成、大田晃生、牧原克典、宮崎誠一

    電子情報通信学会(SDM) [シリコン材料・デバイス] 

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    Event date： 2015

    Language：Japanese   Presentation type：Oral presentation (general)  

    Country：Japan  

  330. Mnナノドットを埋め込んだSiOx-Ni電極MIMダイオードの抵抗変化特性

    荒井崇、大田晃生、牧原克典、宮崎誠一

    第14回日本表面科学会中部支部研究会 

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    Event date： 2014.12

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋大学   Country：Japan  

  331. リモート水素プラズマ支援によるSiO2上へのFeシリサイドナノドットの高密度一括形成

    張海、牧原克典、大田晃生、池田弥央、宮崎誠一

    第14回日本表面科学会中部支部研究会 

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    Event date： 2014.12

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋大学   Country：Japan  

  332. High Density Formation of Fe-Silicide Nanodots on SiO2 Induced by Remote H2 Plasma International conference

    H. Zhang, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

    27th International Microprocesses and Nanotechnology Conference 

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    Event date： 2014.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  333. Study of Electron Field Emission from High Density Self-aligned Si-based Quantum Dots International conference

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

    JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2014.11

    Language：English   Presentation type：Poster presentation  

    Country：Belgium  

  334. Mnナノドットを埋め込んだSiリッチ酸化膜の抵抗変化特性

    荒井崇、劉冲、大田晃生、牧原克典、宮崎誠一

    応用物理学会SC東海地区学術講演会2014 

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    Event date： 2014.11

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋大学   Country：Japan  

  335. Si量子ドット多重集積構造からの電界電子放出特性評価

    竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一

    応用物理学会SC東海地区学術講演会2014 

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    Event date： 2014.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名古屋大学   Country：Japan  

  336. CoPt合金ナノドット/極薄SiO2層における電子輸送特性の外部磁場依存性

    壁谷悠希、張海、福岡諒、大田晃生、牧原克典、宮崎誠一

    応用物理学会SC東海地区学術講演会2014 

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    Event date： 2014.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名古屋大学   Country：Japan  

  337. リモートH2プラズマ処理が4H-SiC(0001)の表面マイクロラフネス及び欠陥準位密度に与える影響

    グェンスァンチュン、大田晃生、竹内大智、牧原克典、宮崎誠一

    応用物理学会SC東海地区学術講演会2014 

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    Event date： 2014.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名古屋大学   Country：Japan  

  338. GeコアSi量子ドットのフォトルミネッセンス特性評価

    近藤圭悟、牧原克典、池田弥央、宮崎誠一

    応用物理学会SC東海地区学術講演会2014 

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    Event date： 2014.11

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋大学   Country：Japan  

  339. 不純物添加Si量子ドット多重集積構造のエレクトロルミネッセンス特性評価

    山田敬久、牧原克典、池田弥央、宮崎誠一

    応用物理学会SC東海地区学術講演会2014 

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    Event date： 2014.11

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋大学   Country：Japan  

  340. リモート水素プラズマ支援によるSiO2上へのFeシリサイドドットの高密度形成

    張海、牧原克典、大田晃生、池田弥央、宮崎誠一

    応用物理学会SC東海地区学術講演会2014 

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    Event date： 2014.11

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋大学   Country：Japan  

  341. FePt合金ナノドットの高密度形成と磁化特性評価

    満行優介、張海、牧原克典、大田晃生、徳岡良浩、加藤剛志、岩田聡、宮崎誠一

    応用物理学会SC東海地区学術講演会2014 

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    Event date： 2014.11

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋大学   Country：Japan  

  342. Niナノドットを電極に用いたSiOx-ReRAMの抵抗変化特性

    加藤祐介、劉冲、荒井崇、大田晃生、竹内大智、張海、牧原克典、宮崎誠一

    応用物理学会SC東海地区学術講演会2014 

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    Event date： 2014.11

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋大学   Country：Japan  

  343. Characterization of Electron Emission from High Density Self-aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy International conference

    D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki

    226th Meeting of The Electrochemical Society 

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    Event date： 2014.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Mexico  

  344. Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack International conference

    A. Ohta, H. Murakami, K. Hashimoto, K. Makihara and S. Miyazaki

    226th Meeting of The Electrochemical Society 

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    Event date： 2014.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Mexico  

  345. Photoluminescence Study of Si Quantum Dots with Ge Core International conference

    K. Makihara, K. Kondo, M. Ikeda, A. Ohta and S. Miyazaki

    226th Meeting of The Electrochemical Society 

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    Event date： 2014.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Mexico  

  346. FePtナノドット/極薄SiO2層における電子輸送特性の外部磁場依存性

    壁谷悠希、大田晃生、牧原克典、宮崎誠一

    第75回秋季応用物理学会 

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    Event date： 2014.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue： 北海道大学   Country：Japan  

  347. 光電子収率分光法によるSiO2/SiC界面の電子状態計測

    大田晃生、竹内大智、グェンスァンチュン、牧原克典、宮崎誠一

    第75回秋季応用物理学会 

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    Event date： 2014.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue： 北海道大学   Country：Japan  

  348. 不純物添加Si量子ドット多重集積構造のエレクトロルミネッセンス

    山田敬久、牧原克典、池田弥央、宮崎誠一

    第75回秋季応用物理学会 

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    Event date： 2014.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue： 北海道大学   Country：Japan  

  349. リモート水素プラズマ支援によるMn-Ge系ナノドットの高密度一括形成

    温映輝、牧原克典、大田晃生、宮崎誠一

    第75回秋季応用物理学会 

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    Event date： 2014.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue： 北海道大学   Country：Japan  

  350. Mnナノドット埋め込みSiリッチ酸化膜の抵抗変化特性

    荒井崇、大田晃生、牧原克典、宮崎誠一

    第75回秋季応用物理学会 

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    Event date： 2014.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue： 北海道大学   Country：Japan  

  351. P添加Si量子ドット多重集積構造の電界電子放出特性

    竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一

    第75回秋季応用物理学会 

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    Event date： 2014.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue： 北海道大学   Country：Japan  

  352. Impact of Remote H2 Plasma on Surface Roughness of 4H-SiC(0001) International conference

    T. Nguyen, H. Zhang, D. Takeuchi, A. Ohta, K. Makihara, H. Murakami, and S. Miyazaki

    International Union Material Research Society - International Conference in Asia 2014 

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    Event date： 2014.8

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  353. Electroluminescence from Multiply-Stack of Doped Si Quantum Dots International conference

    T. Yamada, K. Makihara, M. Ikeda and S. Miyazaki

    2014 International Conference on Solid State Devices and Materials 

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    Event date： 2014.8

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  354. Characterization of Resistance-Switching of Ni Nano-dot/SiOx/Ni Diodes International conference

    A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki

    International Union Material Research Society - International Conference in Asia 2014 

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    Event date： 2014.8

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  355. High Density Formation of Mn and Mn-germanide Nanodots Induced by Remote Hydrogen Plasma International conference

    Y. Wen, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

    International Union Material Research Society - International Conference in Asia 2014 

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    Event date： 2014.8

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  356. Impact of Magnetic-Field Application on Electron Transport Through CoPt Alloy Nanodots International conference

    Y. Kabeya, H. Zhang, R. Fukuoka, A. Ohta, K. Makihara and S. Miyazaki

    International Union Material Research Society - International Conference in Asia 2014 

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    Event date： 2014.8

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  357. Crystalline Structure and Magnetic Properties of FePt Alloy Nanodots International conference

    K. Makihara, R. Fukuoka, H. Zhang, A. Ohta, Y. Tokuda, T. Kato, S. Iwata, and S. Miyazaki

    International Union Material Research Society - International Conference in Asia 2014 

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    Event date： 2014.8

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  358. Local Electrical Properties of Si-rich Oxides with Embedding Mn-nanodots by Atomic Force Microscopy Using Conducting-Probe International conference

    T. Arai, C. Liu, A. Ohta, K. Makihara and S. Miyazaki

    International Union Material Research Society - International Conference in Asia 2014 

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    Event date： 2014.8

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  359. Characterization of electronic charged states of self-aligned coupled Si quantum dots by AFM/KFM Probe Technique International conference

    K. Makihara, N. Tsunekawa, M. Ikeda and S. Miyazaki

    2014 International SiGe Technology and Device Meeting 

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    Event date： 2014.6

    Language：English   Presentation type：Poster presentation  

    Country：Singapore  

  360. Resistance-Switching Characteristics of Si-rich Oxide as Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements International conference

    A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki

    2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2014.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  361. Impact of Embedded Mn-Nanodots on Resistive Switching in Si-rich Oxides International conference

    T. Arai, C. Liu, A. Ohta, K. Makihara and S. Miyazaki

    2014 International SiGe Technology and Device Meeting 

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    Event date： 2014.6

    Language：English   Presentation type：Poster presentation  

    Country：Singapore  

  362. ナノドットを電極に用いたNi/SiOx/Niダイオードの抵抗変化特性評価

    大田晃生、劉冲、荒井崇、竹内大智、張海、牧原克典、宮崎誠一

    電気通信情報学会(SDM) [シリコン材料・デバイス] 

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    Event date： 2014.6

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名古屋大学   Country：Japan  

  363. Mnナノドットを埋め込んだNi/SiOx/Ni構造の抵抗変化特性

    荒井崇、大田晃生、牧原克典、宮崎誠一

    電気通信情報学会(SDM) [シリコン材料・デバイス] 

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    Event date： 2014.6

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名古屋大学   Country：Japan  

  364. Study on Formation of High Density Fe-Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma Exposure International conference

    H. Zhang, K. Makihara, R. Fukuoka, Y. Kabeya and S. Miyazaki

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2014) 

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    Event date： 2014.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  365. Selective Crystallization and Metallizatioin of a-Ge:H Thin Films by Pt-coating and Exposing to Remote H2 Plasma International conference

    K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2014) 

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    Event date： 2014.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  366. Study on Si/Ge Heterodtructures Formed by PECVD in Combination with Ni-Nds Seeding Nucleation International conference

    Y. Lu, K. Makihara, D. Takeuchi, K. Sakaike, M. Akazawa, S. Higashi and S. Miyazaki

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2014) 

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    Event date： 2014.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  367. 導電性AFM探針による高密度一次元連結Si系量子ドットからの電子放出特性評価(Ⅱ)

    竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一

    第61回春季応用物理学会 

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    Event date： 2014.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  368. 磁性AFM探針を用いたCoPt合金ナノドットの電子輸送特性評価-外部磁場依存性

    壁谷悠希、張海、福岡諒、牧原克典、宮崎誠一

    第61回春季応用物理学会 

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    Event date： 2014.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  369. FePt合金ナノドットの構造および磁化特性評価

    福岡諒、張海、牧原克典、大田晃生、徳岡良浩、加藤剛志、岩田聡、宮崎誠一

    第61回春季応用物理学会 

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    Event date： 2014.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  370. Niナノドット電極を用いたSiOx薄膜の抵抗変化特性

    劉冲、荒井崇、大田晃生、竹内大智、張海、牧原克典、宮崎誠一

    第61回春季応用物理学会 

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    Event date： 2014.3

    Language：Japanese   Presentation type：Poster presentation  

    Venue：青山学院大学   Country：Japan  

  371. Mnナノドットを埋め込んだSiOx MIM構造の局所電気伝導解析

    荒井崇、劉冲、大田晃生、牧原克典、宮崎誠一

    第61回春季応用物理学会 

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    Event date： 2014.3

    Language：Japanese   Presentation type：Poster presentation  

    Venue：青山学院大学   Country：Japan  

  372. AFM/KFMによる自己整合一次元連結Si量子ドットの局所帯電評価

    恒川直輝、牧原克典、池田弥央、宮崎誠一

    第61回春季応用物理学会 

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    Event date： 2014.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  373. リモート水素プラズマ支援によるMnおよびMnジャーマナイドナノドットの高密度一括形成

    温映輝、牧原克典、大田晃生、池田弥央、宮崎誠一

    第61回春季応用物理学会 

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    Event date： 2014.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  374. P添加GeコアSi量子ドットのフォトルミネッセンス特性評価

    近藤圭悟、鈴木善久、牧原克典、池田弥央、小山剛志、岸田英夫、宮崎誠一

    第61回春季応用物理学会 

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    Event date： 2014.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  375. Mnナノドットを埋め込んだSiOx 膜の抵抗変化特性

    荒井崇、劉冲、大田晃生、牧原克典、宮崎誠一

    第61回春季応用物理学会 

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    Event date： 2014.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  376. リモート水素プラズマ支援によるFeシリサイドナノドットの高密度形成

    張海、牧原克典、大田晃生、池田弥央、宮崎誠一

    第61回春季応用物理学会 

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    Event date： 2014.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  377. P/N制御Si量子ドット多重集積構造のエレクトロルミネッセンス

    山田敬久、牧原克典、鈴木善久、池田弥央、宮崎誠一

    第61回春季応用物理学会 

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    Event date： 2014.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  378. Alignment Control and Electrical Coupling of Si-based Quantum Dots International conference

    K. Makihara and S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2014.2

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  379. High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of Their Magnetic Properties International conference

    R. Fukuoka, H. Zhang, K. Makihara, Y. Tokuoka, T. Kato, S. Iwata and S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2014.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  380. Characterization of Local Electronic Transport through Si-Nanocrystals/ Si-Nanocolumnar Structures by Non-contact Conductive Atomic Force Microscopy International conference

    D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2014.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  381. Impact of Pulsed Bias Application on Electroluminescence Properties from One-dimensionally Self-Aligned Si-based Quantum Dots International conference

    Y. Suzuki, K. Makihara, M. Ikeda and S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2014.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  382. Evaluation of Chemical Bonding Features and Resistive Switching in TiOx/SiOx Stack in Ti Electrode MIM Diode International conference

    T. Arai, C. Liu, A. Ohta, K. Makihara and S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2014.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  383. Electroluminescence from Multiply-Stacking B-doped Si Quantum Dots International conference

    T. Yamada, K. Makihara, Y. Suzuki, M. Ikeda and S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2014.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  384. Formation of High-Density Magnetic Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma International conference

    Y. Kabeya, H. Zhang, R. Fukuoka, K. Makihara and S. Miyazaki

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2014.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  385. 光電子エネルギー損失信号による極薄酸化物のエネルギーバンドギャップの決定手法の再検討

    大田 晃生、村上 秀樹、牧原 克典、宮崎 誠一

    ゲートスタック研究会 (第19回研究会) 

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    Event date： 2014.1

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋工業大学   Country：Japan  

  386. Progress In Determination Method of Ultrathin Si-based Oxide Bandgaps From Analysis of Energy Loss Signals for Photoelectrons International conference

    A. Ohta, K. Makihara, H. Murakami, and S. Miyazaki

    27th International Microprocesses and Nanotechnology Conference (MNC 2014) 

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    Event date： 2014

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  387. High density formation of FePt alloy nanodots on SiO2 induced by remote hydrogen plasma International conference

    R. Fukuoka, H. Zhang, K. Makihara, Y. Tokuoka, T. Kato, S. Iwata and S. Miyazaki

    Magnetics and Optics Research International Symposium (MORIS2013) 

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    Event date： 2013.12

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  388. SiOx/TiO2積層したTi電極MIMダイオードの抵抗スイッチング

    荒井 崇、大田 晃生、福嶋 太紀、牧原 克典、宮崎 誠一

    第13回日本表面科学会中部支部研究会 

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    Event date： 2013.12

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名古屋工業大学   Country：Japan  

  389. リモート水素プラズマ支援によるSiO2上へのFeナノドットの高密度・一括形成

    張 海、福岡 諒、壁谷 悠希、牧原 克典、宮崎 誠一

    第13回日本表面科学会中部支部研究会 

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    Event date： 2013.12

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名古屋工業大学   Country：Japan  

  390. Characterization of Electron Emission from Si-Nanocrystals/Si-Nanocolumnar Structures by Non-contact Conductive Atomic Force Microscopy International conference

    D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi

    12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12) and 21st International Colloquium on Scanning Probe Microscopy (ICSPM21) 

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    Event date： 2013.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  391. B添加Si量子ドット多重集積構造のエレクトロルミネッセンス

    山田 敬久、牧原 克典、鈴木 善久、宮崎 誠一

    応用物理学会SC東海地区学術講演会2013 

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    Event date： 2013.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名古屋大学   Country：Japan  

  392. 外部磁場印加がCoPt合金ナノドットの電気伝導特性に及ぼす影響

    壁谷 悠希、張 海、福岡 諒、牧原 克典、宮崎 誠一

    応用物理学会SC東海地区学術講演会2013 

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    Event date： 2013.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名古屋大学   Country：Japan  

  393. 一次元連結Si系量子ドットの電界発光減衰特性

    鈴木 善久、牧原 克典、池田 弥央、宮崎 誠一

    応用物理学会SC東海地区学術講演会2013 

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    Event date： 2013.11

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋大学   Country：Japan  

  394. AFM/KFMによる一次元連結・高密度Si系量子ドットにおける帯電電荷の経時変化計測

    恒川 直輝、牧原 克典、池田 弥央、宮崎 誠一

    応用物理学会SC東海地区学術講演会2013 

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    Event date： 2013.11

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋大学   Country：Japan  

  395. 導電性AFM探針によるSiナノ結晶/柱状Siナノ構造からの電子放出特性評価

    竹内 大智、牧原 克典、池田 弥央、宮崎 誠一、可貴 裕和、林 司

    応用物理学会SC東海地区学術講演会2013 

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    Event date： 2013.11

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋大学   Country：Japan  

  396. リモート水素プラズマ支援によるSiO2上へのFeナノドットの高密度・一括形成

    張 海、福岡 諒、壁谷 悠希、牧原 克典、宮崎 誠一

    応用物理学会SC東海地区学術講演会2013 

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    Event date： 2013.11

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋大学   Country：Japan  

  397. リモート水素プラズマ支援によるFePt合金ナノドットの高密度・一括形成と磁化特性評価

    福岡 諒、張 海、牧原 克典、宮崎 誠一

    応用物理学会SC東海地区学術講演会2013 

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    Event date： 2013.11

    Language：Japanese   Presentation type：Poster presentation  

    Venue：名古屋大学   Country：Japan  

  398. Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes International conference

    A. Ohta, K. Makihara, M. Fukusima, H. Murakami, S. Higashi and S. Miyazaki

    224th Electrochemical Society (ECS) Meeting : Dielectric and Semiconductor Materials, Devices, and Processing 

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    Event date： 2013.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  399. Study on Electronic Emission through Si-Nanocrystals / Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopy International conference

    D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi

    JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2013.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Germany  

  400. Characterization of Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application International conference

    S. Miyazaki, K. Makihara and M. Ikeda

    JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2013.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Germany  

  401. Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application International conference

    S. Miyazaki, M. Ikeda and K. Makihara

    224th Electrochemical Society (ECS) Meeting : Dielectric and Semiconductor Materials, Devices, and Processing 

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    Event date： 2013.10

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：United States  

  402. Transient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dots International conference

    Y. Suzuki, K. Makihara M. Ikeda and S. Miyazaki

    2013 International Conference on Solid State Devices and Materials 

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    Event date： 2013.9

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  403. Characterization of Electron Transport Through Ultra High Density Array of One-dimensionally Self-Aligned Si-based Quantum Dots International conference

    H. Niimi, K. Makihara, M. Ikeda and S. Miyazaki

    2013 International Conference on Solid State Devices and Materials 

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    Event date： 2013.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  404. 導電性AFM探針による高密度一次元連結Si系量子ドットからの電子放出特性評価

    竹内大智、牧原克典、池田弥央、宮崎誠一

    第74回応用物理学会秋季学術講演会 

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    Event date： 2013.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：同志社大学   Country：Japan  

  405. バイアス印加が一次元連結Si系量子ドットのPL特性に及ぼす影響

    鈴木善久、牧原克典、池田弥央、宮崎誠一

    第74回応用物理学会秋季学術講演会 

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    Event date： 2013.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：同志社大学   Country：Japan  

  406. リモート水素プラズマ支援によるSiO2上へのFeナノドットの高密度形成

    張海、福岡諒、壁谷悠希、牧原克典、宮崎誠一

    第74回応用物理学会秋季学術講演会 

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    Event date： 2013.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：同志社大学   Country：Japan  

  407. 外部磁場印加がCoPt合金ナノドットの電子輸送特性に及ぼす影響

    壁谷悠希、福岡諒、張海、牧原克典、宮崎誠一

    第74回応用物理学会秋季学術講演会 

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    Event date： 2013.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：同志社大学   Country：Japan  

  408. リモート水素プラズマ支援によるFePt合金ナノドットの高密度形成と磁化特性評価

    福岡諒、張海、壁谷悠希、恒川直輝、牧原克典、大田晃生、宮崎誠一

    第74回応用物理学会秋季学術講演会 

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    Event date： 2013.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：同志社大学   Country：Japan  

  409. Low Temperature Formation of Crystalline Si/Ge Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation International conference

    Y. Lu, K. Makihara, D. Takeuchi, K. Sakaike, M. Akazawa, M. Ikeda, S. Higashi and S, Miyazaki

    25th International Conference on Amorphous and Nanocrystalline Semiconductor 

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    Event date： 2013.8

    Language：English   Presentation type：Oral presentation (general)  

    Country：Canada  

  410. Formation of High Density Fe-Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma International conference

    H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and and S. Miyazaki

    35th International Symposium on Dry Process 

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    Event date： 2013.8

    Language：English   Presentation type：Poster presentation  

    Country：Korea, Republic of  

  411. Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Devices International conference

    S. Miyazaki, K. Makihara and M. Ikeda

    JSPS Core-to Core Program Seminar "Atomically Controlled Processing for Ultralarge Scale Integration 

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    Event date： 2013.6

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：Japan  

  412. High Density Formation of CoPt Alloy Nanodots Induced by Remote H2 Plasma International conference

    R. Fukuoka, H. Zhang, Y. Kabeya, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 

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    Event date： 2013.6

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  413. Characterization of Electroluminescence from Multiply-Stacked B-doped Si Quantum Dots International conference

    T. Yamada, K. Makihara, H. Takami, Y. Suzuki, M. Ikeda and S. Miyazaki

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 

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    Event date： 2013.6

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  414. Characterization of Electroluminescence from Self-Aligned Si-Based Quantum Dots Stack by Intermittent Bias Application International conference

    K. Makihara, H. Takami, Y. Suzuki, M. Ikeda, S. Miyazaki

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 

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    Event date： 2013.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  415. リモートH2プラズマ支援によるCoPtナノドットの高密度形成と帯電・帯磁特性評価

    牧原克典、福岡諒、張海、壁谷悠希、大田晃生、宮崎誠一

    電気通信情報学会(SDM) [シリコン材料・デバイス] 

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    Event date： 2013.6

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：機械振興会館   Country：Japan  

  416. SiOx/TiO2積層したMIMダイオードにおける抵抗変化特性評価

    大田晃生、福嶋太紀、牧原克典、村上秀樹、東清一郎、宮崎誠一

    電気通信情報学会(SDM) [シリコン材料・デバイス] 

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    Event date： 2013.6

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：機械振興会館   Country：Japan  

  417. Selective Growth of Self-Assembling Si and SiGe Quantum Dots International conference

    K. Makihara, M. Ikeda and S. Miyazaki

    2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2013.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  418. High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy International conference

    D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi

    2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2013.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  419. High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma International conference

    H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and S. Miyazaki

    3rd International Conference on Advanced Engineering Materials and Technology (AEMT 2013) 

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    Event date： 2013.5

    Language：English   Presentation type：Oral presentation (general)  

    Country：China  

  420. 導電性AFM探針を用いたSiナノ結晶/柱状Siナノ構造の電子放出特性評価

    竹内大智、牧原克典、池田弥央、宮崎誠一、可貴裕和、林司

    第60回春季応用物理学会 

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    Event date： 2013.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  421. 多重集積したB 添加量子ドットのエレクトロルミネッセンス特性評価

    山田 敬久、牧原 克典、高見 弘貴、鈴木 善久、池田 弥央、宮崎 誠一

    第60回春季応用物理学会 

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    Event date： 2013.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  422. 縦積み連結 Si 系量子ドットの超高密度集積構造における電子輸送特性

    新美博久、 牧原克典、 池田弥央、 宮崎誠一

    第60回春季応用物理学会 

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    Event date： 2013.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  423. 自己組織化形成Si 系量子ドットの選択成長

    牧原 克典、池田 弥央、宮崎 誠一

    第60回春季応用物理学会 

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    Event date： 2013.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  424. パルスバイアス印加が一次元連結 Si 系量子ドットの電界発光に及ぼす影響

    鈴木善久、牧原克典、高見弘貴、池田弥央、宮崎誠一

    第60回春季応用物理学会 

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    Event date： 2013.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  425. 非接触AFMによるSiナノ結晶/柱状Siナノ構造からの電子放出メカニズム解析

    竹内大智、牧原克典、池田弥央、宮崎誠一、可貴裕和、林司

    第60回春季応用物理学会 

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    Event date： 2013.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  426. Niナノドットによる初期核発生制御を活用した高結晶性Si：H/Ge：Hヘテロ結合の低温堆積

    盧義敏、高金、牧原克典、酒池耕平、藤田悠二、池田弥央、大田晃生、東清一郎、宮崎誠一

    第60回春季応用物理学会 

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    Event date： 2013.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  427. Ti電極MIMダイオードにおけるSiOx/TiO2多重積層の抵抗変化特性評価

    福嶋太紀、大田晃生、牧原克典、宮崎誠一

    第60回春季応用物理学会 

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    Event date： 2013.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  428. CoPt合金ナノドットの帯磁特性評価

    壁谷悠希、張海、福岡諒、牧原克典、宮崎誠一

    第60回春季応用物理学会 

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    Event date： 2013.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  429. リモート水素プラズマ支援によるCoPt合金ナノドットの高密度形成

    福岡諒、張海、壁谷悠希、牧原克典、大田晃生、宮崎誠一

    第60回春季応用物理学会 

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    Event date： 2013.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  430. Electronic and Optoelectronic Response of Hybrid Nanodots Floating Gate MOS Devices International conference

    S. Miyazaki, K. Makihara, M. Ikeda and H. Murakami

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2013.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  431. Transient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dots International conference

    Y. Suzuki, K. Makihara, H. Takami, M. Ikeda and S. Miyazaki

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2013.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  432. Electroluminescence Study of Self-aligned Si-based Quantum Dots International conference

    H. Takami, K. Makihara, M. Ikeda and S. Miyazaki

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2013.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  433. Spatially-controlled Charge Storage and Charge Dispersion in High Density Self-aligned Si-based Quantum Dots International conference

    N. Tsunekawa, K. Makihara, M. Ikeda and S. Miyazaki

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2013.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  434. Evaluation of Resistance-Switching Behaviors and Chemical Bonding Features of Si-rich Oxide ReRAMs with TiN Electrode International conference

    M. Fukusima, A. Ohta, K. Makihara and S. Miyazaki

    The 6th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2013) 

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    Event date： 2013.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  435. Study on Electronic Emission through Ultrathin Au/High-Dense Si-Nanocolumnar Structures Accompanied with Si-Nanocrystals by Conductive Atomic Force Microscopy International conference

    D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi

    The 6th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2013) 

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    Event date： 2013.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  436. Characterization of Electron Emission from Si-Nanocrystals/Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopy International conference

    D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2013.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  437. Characterization of Resistive Switching of Si-rich Oxides International conference

    M. Fukusima, A. Ohta, K. Makihara and S. Miyazaki

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2013.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  438. High Density Formation and Characterization of CoPt Alloy Nanodots as Memory Nodes International conference

    R. Fukuoka, H. Zhang, Y. Kabeya, K. Makihara, A. Ohta and S. Miyazaki

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date： 2013.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  439. Highly-crystallized Ge:H Film Growth from GeH4 Very High Frequency Inductively-coupled Plasma -Crystalline Nucleation Initiated by Ni-nanodots- International conference

    K. Makihara, J. Gao, D. Takeuchi, K. Sakaike, S. Hayashi, M. Ikeda, S. Higashi, and S. Miyazaki

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date： 2013.1

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  440. Resistive Switching of Si-rich Oxide Dielectric with Ti based Electrodes International conference

    A. Ohta, M. Fukusima, K. Makihara, S. Higashi ands. Miyazaki

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date： 2013.1

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  441. Charging and Magnetizing Characteristics of Co Nanodots Formed by Remote H2-Plasma Induced Migration International conference

    R. Fukuoka, K. Makihara, M. Ikeda and S. Miyazaki

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date： 2013.1

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  442. Characterization of Electronic Emission Through Au/Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopy International conference

    D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date： 2013.1

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  443. 導電性AFM探針を用いたSiナノ結晶／柱状Siナノ構造からの電子放出検出

    竹内大智、牧原克典、池田弥央、宮崎誠一、可貴裕和、林司

    第12回日本表面科学会中部支部研究会 

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    Event date： 2012.12

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：名城大学   Country：Japan  

  444. Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes International conference

    K. Makihara, M. Fukushima, A. Ohta, M. Ikeda and S. Miyazaki

    222nd Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing and Device Symposium 

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    Event date： 2012.10

    Language：English   Presentation type：Poster presentation  

    Country：United States  

  445. Impact of Ni-nanodots on Crystalline Ge:H Film Growth from GeH4 Very High Frequency Inductively-Coupled Plasma International conference

    11th Asia-Pacific Conference on Plasma Science and Technology and 25th Symposium on Plasma Science for Materials (APCPST & SPSM) 

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    Event date： 2012.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  446. Ti系電極を用いたSiリッチ酸化層の抵抗変化特性評価

    福嶋太紀、太田晃生、牧原克典、宮崎誠一

    第73回秋季応用物理学会 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：愛媛大学   Country：Japan  

  447. Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots International conference

    H. Takami, K. Makihara, M. Ikeda, and S. Miyazaki

    2012 International Conference on Solid State Devices and Materials 

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    Event date： 2012.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  448. 溶液ペーストによる無機材料を用いた太陽電池の作製

    張海、市村正也、牧原克典、宮崎誠一

    応用物理学会・東海支部第19回基礎セミナー [透明導電膜-基礎から応用-] 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Poster presentation  

    Venue：岐阜大学   Country：Japan  

  449. 導電性AFM探針による極薄Au/柱状Siナノ構造からの電子放出検出

    竹内大智、牧原克典、池田弥央、宮崎誠一、可貴裕和、林司

    応用物理学会・東海支部第19回基礎セミナー [透明導電膜-基礎から応用-] 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Poster presentation  

    Venue：岐阜大学   Country：Japan  

  450. Ti系電極を用いたSiOx膜の化学構造分析と抵抗スイッチング特性評価

    福島太紀、大田晃生、牧原克典、宮崎誠一

    応用物理学会・東海支部第19回基礎セミナー [透明導電膜-基礎から応用-] 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Poster presentation  

    Venue：岐阜大学   Country：Japan  

  451. 溶液ペーストによるCuO/ZnOヘテロ構造太陽電池の作成

    張海、市村正也、牧原克典、宮崎誠一

    第73回秋季応用物理学会 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Poster presentation  

    Venue：愛媛大学   Country：Japan  

  452. NiナノドットがGe:H薄膜堆積及び電気伝導特性に及ぼす影響

    高金、牧原克典、池田弥央、福嶋太紀、宮崎誠一

    第73回秋季応用物理学会 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：愛媛大学   Country：Japan  

  453. 導電性AFM探針によるNiナノドット上に形成した高結晶性Ge:H薄膜の局所伝導評価

    高金、牧原克典、高見弘貴、竹内大智、酒池耕平、林　将平、池田弥央、東清一郎、宮崎誠一

    第73回秋季応用物理学会 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：愛媛大学   Country：Japan  

  454. AFM/KFMによる一次元連結Si系量子ドットの帯電電荷分布計測

    恒川直輝、牧原克典、池田弥央、宮崎誠一

    第73回秋季応用物理学会 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：愛媛大学   Country：Japan  

  455. 導電性AFM探針によるSiナノ結晶/柱状Siナノ構造からの電子放出検出

    竹内大智、牧原克典、池田弥央、宮崎誠一、可貴裕和、林司

    第73回秋季応用物理学会 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：愛媛大学   Country：Japan  

  456. パルスバイアス印加による一次元連結Si系量子ドットの電界発光評価

    鈴木善久、牧原克典、高見弘貴、池田弥央、宮崎誠一

    第73回秋季応用物理学会 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：愛媛大学   Country：Japan  

  457. 電圧パルス幅が一次元連結Si系量子ドットダイオード構造のEL特性に及ぼす影響

    高見弘貴、牧原克典、池田弥央、宮崎誠一

    第73回秋季応用物理学会 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：愛媛大学   Country：Japan  

  458. Temporal Changes of Charge Distribution in High Density Self-Aligned Si-Based Quantum Dots as Evaluated by AFM/KFM International conference

    N. Tsunekawa, K. Makihara, M. Ikeda and S. Miyazaki

    International Union Materials Research Societies - International Conference on Electronic Materials 2012 

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    Event date： 2012.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  459. Ti系電極を用いたSiOx膜の化学構造分析と抵抗スイッチング特性評価

    福島太紀、大田晃生、牧原克典、宮崎誠一

    応用物理学会・東海支部第19回基礎セミナー [透明導電膜-基礎から応用-] 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Poster presentation  

    Venue：岐阜大学   Country：Japan  

  460. 溶液ペーストによる無機材料を用いた太陽電池の作製

    張海、市村正也、牧原克典、宮崎誠一

    応用物理学会・東海支部第19回基礎セミナー [透明導電膜-基礎から応用-] 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Poster presentation  

    Venue：岐阜大学   Country：Japan  

  461. 導電性AFM探針による極薄Au/柱状Siナノ構造からの電子放出検出

    竹内大智、牧原克典、池田弥央、宮崎誠一、可貴裕和、林司

    応用物理学会・東海支部第19回基礎セミナー [透明導電膜-基礎から応用-] 

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    Event date： 2012.9

    Language：Japanese   Presentation type：Poster presentation  

    Venue：岐阜大学   Country：Japan  

  462. Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots International conference

    H. Takami, K. Makihara, M. Ikeda, and S. Miyazaki

    2012 International Conference on Solid State Devices and Materials (SSDM) 

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    Event date： 2012.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  463. Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on resistance Switching Behavior International conference

    A. Ohta, K. Makihara, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki

    2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2012.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  464. Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar structures by Conducting-Probe Atomic Force Microscopy International conference

    D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi

    2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2012.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  465. Characterization of Resistive Switching of Pt/Si-rich Oxide/TiN System International conference

    M. Fukushima, A. Ohta, K. Makihara and S. Miyazaki

    2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2012.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  466. Photoexcited Carrier Transfer in NiSi-nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures International conference

    M. Ikeda, K. Makihara and S. Miyazaki

    2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2012.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  467. Study of Electron Transport Characteristics Through Self-Aligned Si-Based Quantum Dots International conference

    K. Makihara, C. Liu, M. Ikeda and S. Miyazaki

    2012 International SiGe Technology and Device Meeting 

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    Event date： 2012.5

    Language：English   Presentation type：Poster presentation  

    Country：United States  

  468. 柱状Siナノ構造における局所電気伝導と電子放出特性評価

    竹内大智、牧原克典、池田弥央、宮崎誠一、可貴裕和、林　司

    ED/CPM/SDM研究会 

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    Event date： 2012.5

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：豊橋技術科学大学   Country：Japan  

  469. Highly-crystallized Ge:H Film Growth from GeH4 VHF-ICP -Crystalline Nucleation Initiated by Ni-nanodots- International conference

    K. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi and S. Miyazaki

    2012 International SiGe Technology and Device Meeting 

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    Event date： 2012.5

    Language：English   Presentation type：Poster presentation  

    Country：United States  

  470. Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots on Untrathin SiO2 and Its Application to Light Emitting Diodes International conference

    K. Makihara, H. Deki, M. Ikeda and S. Miyazaki

    4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date： 2012.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  471. 酸化アルミニウムを用いた抵抗変化メモリのスイッチング電圧のばらつき抑制

    大塚慎太郎、古屋沙絵子、清水智弘、新宮原正三、牧原克典、宮崎誠一、渡辺忠孝、高野良紀、高瀬浩一

    第59回春季応用物理学会 

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    Event date： 2012.3

    Language：Japanese   Presentation type：Poster presentation  

    Venue：早稲田大学   Country：Japan  

  472. 走査プローブ顕微鏡によるカーボンナノウォールの初期成長過程の解明

    近藤博基、安田幸司、牧原克典、宮崎誠一、平松美根男、関根誠、堀勝

    第59回春季応用物理学会 

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    Event date： 2012.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：早稲田大学   Country：Japan  

  473. Pt/SiOx/Pt 構造における抵抗変化特性

    大田晃生、牧原克典、池田弥央、村上秀樹、東清一郎、宮崎誠一

    第59回春季応用物理学会 

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    Event date： 2012.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：早稲田大学   Country：Japan  

  474. Si 量子ドット/NiSi ナノドットハイブリッドフローティングゲートにおける光励起電子のパルス電圧応答

    池田弥央、牧原克典、宮崎誠一

    第59回春季応用物理学会 

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    Event date： 2012.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：早稲田大学   Country：Japan  

  475. 一次元縦積み連結Si 系量子ドットの室温共鳴トンネル伝導

    牧原克典、池田弥央、宮崎誠一

    第59回春季応用物理学会 

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    Event date： 2012.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：早稲田大学   Country：Japan  

  476. AFM/KFM による一次元連結・高密度Si 系量子ドットの帯電状態の経時変化計測

    牧原克典、恒川直輝、池田弥央、宮崎誠一

    第59回春季応用物理学会 

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    Event date： 2012.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：早稲田大学   Country：Japan  

  477. 導電性AFM 探針による極薄Au/柱状Si ナノ構造の局所電気伝導評価

    竹内大智、牧原克典、池田弥央、宮崎誠一、可貴裕和、林司

    第59回春季応用物理学会 

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    Event date： 2012.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：早稲田大学   Country：Japan  

  478. GeH4 VHF-ICPからの高結晶性Ge:H薄膜堆積―Niナノドットを用いた結晶核発生制御―

    高金、牧原克典、酒池耕平、林将平、出木秀典、池田弥央、東清一郎、宮崎誠一

    第59回春季応用物理学会 

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    Event date： 2012.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：早稲田大学   Country：Japan  

  479. 一次元連結Si系量子ドットのEL特性評価

    高見弘貴、牧原克典、出木秀典、池田弥央、宮崎誠一

    第59回春季応用物理学会 

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    Event date： 2012.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：早稲田大学   Country：Japan  

  480. Pt/SiOx/TiNダイオード構造の抵抗変化特性評価

    福嶋太紀、大田晃生、牧原克典、宮崎誠一

    第59回春季応用物理学会 

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    Event date： 2012.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：早稲田大学   Country：Japan  

  481. Ptナノドット電極を用いたSiOx膜の抵抗変化特性評価

    福嶋太紀、大田晃生、牧原克典、宮崎誠一

    第59回春季応用物理学会 

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    Event date： 2012.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：早稲田大学   Country：Japan  

  482. Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy International conference

    K. Makihara, H. Deki, M. Ikeda and S. Miyazaki

    The 5th International Conference on Plasma-Nano Technology & Science 

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    Event date： 2012.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  483. Formation of PtAl-Alloy Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma International conference

    K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki

    The 5th International Conference on Plasma-Nano Technology & Science 

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    Event date： 2012.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  484. Formation of High Density Ge Quantum Dots and Their Electrical Properties International conference

    M. Ikeda, K. Makihara, A. Ohta and S. Miyazaki

    The 5th International Conference on Plasma-Nano Technology & Science 

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    Event date： 2012.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  485. X-ray Photoemission Study of SiO2/Si/SiGe Heterostructures on Si(100) International conference

    A. Ohta, K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota

    The 5th International Conference on Plasma-Nano Technology & Science 

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    Event date： 2012.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  486. Formation of PtAl Nanodots Induced by Remote Hydrogen Plasma International conference

    K. Makihara, M. Ikeda, A. Ohta, R. Ashihara, S. Higashi and S. Miyazaki

    15th International Conference on Thin Films 

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    Event date： 2011.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  487. Electrical Charging Characteristics of Hybrid Nanodots Floating Gates in MOS Devices International conference

    S. Miyazaki, K. Makihara, A. Ohta and M. Ikeda

    15th International Conference on Thin Films 

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    Event date： 2011.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  488. Evaluation of Electronic Properties of Pillar-shaped Si Nanostructures by Conductive Atomic Force Microscopy International conference

    J. Gao, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi

    15th International Conference on Thin Films 

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    Event date： 2011.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  489. Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density International conference

    K. Makihara, H. Deki, M Ikeda and S, Miyazaki

    2011 International Conference on Solid State Devices and Materials 

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    Event date： 2011.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  490. 一次元連結・高密度Si系量子ドットにおけるEL発光

    高見弘貴、牧原克典、出木秀典、池田弥央、宮崎誠一

    第72回秋季応用物理学会 

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    Event date： 2011.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：山形大学   Country：Japan  

  491. プラズマジェット急速熱処理による高密度Ptナノドット形成とフローティングゲートメモリ応用

    牧原克典、池田弥央、山根雅人、東清一郎、宮崎誠一

    第72回秋季応用物理学会 

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    Event date： 2011.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：山形大学   Country：Japan  

  492. KFMによる微結晶ゲルマニウム薄膜の局所帯電評価

    牧原克典、出木秀典、池田弥央、宮崎誠一

    第72回秋季応用物理学会 

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    Event date： 2011.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：山形大学   Country：Japan  

  493. 導電性AFMによる柱状Siナノ構造における電気伝導特性評価

    高金、牧原克典、大田晃生、池田弥央、宮崎誠一、可貴裕和、林司

    第72回秋季応用物理学会 

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    Event date： 2011.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：山形大学   Country：Japan  

  494. Local Electrical Properties of Microcrystalline Germanium Thin Films By Kelvin Force Microscopy International conference

    K. Makihara, H. Deki, M Ikeda and S, Miyazaki

    24rd International Conference on Amorphous and Nanocrystalline Semiconductor 

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    Event date： 2011.8

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  495. Electrical Characterization of NiSi-NDs/Si-QDs Hybrid Stacked Floating Gate in MOS Capacitors International conference

    K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki

    2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2011.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  496. Electrical Charging Characteristics of Pt-Nanodots Floating Gate in MOS Capacitors International conference

    K. Makihara, N. Morisawa, M. Ikeda, K. Matsumoto, M. Yamane, S. Higashi and S. Miyazaki,

    The 4th International Conference on Plasma-Nano Technology & Science  

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    Event date： 2011.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  497. Formation of High Density PtSi Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Atmospheric Pressure DC Arc Discharge Micro-Thermal Plasma Jet International conference

    M. Yamane, M. Ikedam R. Matsubara, Y. Nishida, K. Makihara, S. Higash and S. Miyazaki

    3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date： 2011.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  498. Formation of Pt-germanide from Pt/a-Ge:H by Remote Hydrogen Plasma Exposure International conference

    K. Makihara, T. Matsumoto, T. Fujioka, M. Ikeda and S. Miyazaki

    3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date： 2011.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  499. 凹凸構造を持った抵抗変化メモリの電流―電圧特性

    大塚慎太郎、古屋紗絵子、清水智弘、新宮原正三、牧原克典、宮崎誠一、渡辺忠孝、高野良紀、高瀬浩一

    第58回春季応用物理学会 

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    Event date： 2011.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  500. 熱プラズマジェットミリ秒熱処理による高密度Ptナノドットの形成とフローティングゲートメモリ応用

    牧原克典、山根雅人、森澤直也、松本和也、池田弥央、東清一郎、宮崎誠一

    第58回春季応用物理学会 

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    Event date： 2011.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  501. リモート水素プラズマ処理によるPt/a-Ge:Hの合金化反応制御

    牧原克典、森澤直也、藤岡知宏、松本達弥、林将平、岡田竜弥、池田弥央、東清一郎、宮崎誠一

    第58回春季応用物理学会 

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    Event date： 2011.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  502. 熱プラズマジェットを用いたミリ秒熱処理によるPtシリサイドナノドットの形成

    山根雅人、池田弥央、森澤直也、松原良平、西田悠亮、松本和也、林将平、牧原克典、宮崎誠一、東清一郎

    第58回春季応用物理学会 

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    Event date： 2011.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  503. マイクロ融液プロセスによる水素終端Si 基板上での疑似ヘテロエピタキシャルGe 膜の形成

    松本達弥、牧原克典、赤澤宗樹、東清一郎

    第58回春季応用物理学会 

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    Event date： 2011.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  504. 高密度自己整合集積したSi系量子ドットのエレクトロルミネッセンス

    牧原克典、出木秀典、森澤直也、池田弥央、宮崎誠一

    第58回春季応用物理学会 

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    Event date： 2011.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川工科大学   Country：Japan  

  505. Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet International conference

    K. Makihara, K. Matsumoto, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki

    International Symposium on Dry Process 

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    Event date： 2010.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  506. Geometry Dependencies of Switching Characteristics of Anodic Porous Alumina for ReRAM International conference

    S. Otsuka, R. Takeda, T. Shimizu, S. Shingubara, K. Makihara, S. Miyazaki, T. Watanabe, Y. Takano and K. Takase

    23rd International Microprocesses and Nanotechnology Conference 

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    Event date： 2010.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  507. The Impact of Y2O3 Addition into TiO2 on Electronic States and Resistive Switching Characteristics International conference

    A. Ohta, Y. Goto, G. Wei, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki

    23rd International Microprocesses and Nanotechnology Conference 

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    Event date： 2010.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  508. Self-Align Formation of Si Quantum Dots International conference

    K. Makihara, M. Ikeda, H. Deki, A. Ohta and S. Miyazaki

    218th Electrochemical Society Meeting : SiGe & Ge Materials, Processing and Device Symposium 

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    Event date： 2010.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  509. Formation of Pt-germanide from Pt/a-Ge:H by Remote Hydrogen Plasma Treatment at Atmosphere Temperature International conference

    K. Makihara, Y. Miyazaki, T. Fujioka, T. Matsumoto, M. Ikeda and S. Miyazaki

    7th International Conference on Reactive Plasmas / 28th Symposium on Plasma Processing / 63rd Gaseous Electronics Conference 

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    Event date： 2010.10

    Language：English   Presentation type：Poster presentation  

    Country：France  

  510. Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Microliquid Ge Melt International conference

    T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa and S. Miyazaki

    218th Electrochemical Society Meeting : SiGe & Ge Materials, Processing and Device Symposium 

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    Event date： 2010.10

    Language：English   Presentation type：Poster presentation  

    Country：United States  

  511. Collective Tunneling Model in Charge Trap Type NVM Cell International conference

    M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, T. Endoh

    2010 International Conference on Solid State Devices and Materials 

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    Event date： 2010.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  512. Multistep Electron Injection in a PtSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in nMOSFETs International conference

    M. Ikeda, S. Nakanishi, N. Morisawa, A. Kawanami, K. Makihara and S. Miyazaki

    2010 International Conference on Solid State Devices and Materials 

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    Event date： 2010.9

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  513. Study on Native Oxidation of Ge (111) and (100) Surfaces International conference

    S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi and S. Miyazaki

    2010 International Conference on Solid State Devices and Materials 

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    Event date： 2010.9

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  514. PtSiナノドット/Si量子ドット積層ハイブリッドフローティングゲートにおける多段階電子注入特性

    池田弥央、中西翔、森澤直也、川浪彰、牧原克典、宮崎誠一

    第71回秋季応用物理学会 

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    Event date： 2010.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：長崎大学   Country：Japan  

  515. 自己整合一次元連結Si量子ドットの形成

    牧原克典、池田弥央、大田晃生、川浪彰、宮崎誠一

    第71回秋季応用物理学会 

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    Event date： 2010.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：長崎大学   Country：Japan  

  516. 微小融液滴下による疑似エピタキシャルGe / Siの形成

    松本竜弥、東清一郎、牧原克典、赤澤宗樹、宮崎誠一

    第71回秋季応用物理学会 

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    Event date： 2010.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：長崎大学   Country：Japan  

  517. Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano-Dot International conference

    M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta and T. Endoh

    30th International Conference on the Physics of Semiconductors 

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    Event date： 2010.7

    Language：English   Presentation type：Poster presentation  

    Country：Korea, Republic of  

  518. The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure International conference

    2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2010.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  519. Formation of PtAl Nanodots Induced by Remote Hydrogen Plasma International conference

    K. Makihara, R. Ashihara, M. Ikeda, A. Ohta, N. Morisawa, T. Fujioka, H. Murakami and S. Miyazaki

    International Symposium on Technology Evoluation for Silicon Nano-Electronics 

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    Event date： 2010.6

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  520. Formation and Characterization of Hybrid Nanodots Stack Structure and Its Application to Floating Gate Memories International conference

    S. Miyazaki, M. Ikeda, K. Makihara, H. Murakami and S. Higashi

    International Symposium on Technology Evoluation for Silicon Nano-Electronics 

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    Event date： 2010.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  521. Multistep Electron Injection in PtSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in MOS Structures International conference

    M. Ikeda, S. Nakanishi, N. Morisawa, A. Kawanami, K. Makihara and S. Miyazaki

    International Symposium on Technology Evoluation for Silicon Nano-Electronics 

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    Event date： 2010.6

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  522. Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures International conference

    N. Morisawa, M. Ikeda, K. Makihara and S. Miyazaki

    International Symposium on Technology Evoluation for Silicon Nano-Electronics 

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    Event date： 2010.6

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  523. Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure International conference

    M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh

    International Symposium on Technology Evoluation for Silicon Nano-Electronics 

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    Event date： 2010.6

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  524. Optical Response of Si-Quantum-Dots/NiSi-Nanodots Hybrid Stacked Floating Gate International conference

    N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki

    International Meeting for Future of Electron Devices, Kansai 

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    Event date： 2010.5

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  525. High Density Formation of Ge Quantum Dots on SiO2 International conference

    K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki

    5th International SiGe Technology and Device Meeting 

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    Event date： 2010.5

    Language：English   Presentation type：Poster presentation  

    Country：Sweden  

  526. Determination of Valence Band Alignment in SiO2/Si/Si0.55Ge0.45/Si(100) Heterostructures International conference

    A. Ohta, K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota

    5th International SiGe Technology and Device Meeting 

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    Event date： 2010.5

    Language：English   Presentation type：Oral presentation (general)  

    Country：Sweden  

  527. Selective Crystallization and Etching of a-Ge:H Thin Films by Exposing to Remote H2 Plasma International conference

    Y. Miyazaki, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki

    2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date： 2010.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  528. Charging and magnetizing Characteristics of Co Nanodots International conference

    K. Makihara, A. Kawanami, M. Ikeda, R. Ashihara and S. Miyazaki

    The 3rd International Conference on Plasma-Nano Technology & Science 

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    Event date： 2010.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  529. ２次元電子ガス―量子ドット界面における電子トンネル過程に対する微視的考察

    村口正和、高田幸宏、櫻井蓉子、野村晋太郎、白石賢二、牧原克典、池田弥央、宮崎誠一、重田育照、遠藤哲郎

    日本物理学会第65回年次大会 

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    Event date： 2010.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：岡山大学   Country：Japan  

  530. Si熱酸化膜上へのGe量子ドットの高密度形成

    牧原克典、池田弥央、大田晃生、川浪彰、宮崎誠一

    第57回春季応用物理学会 

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    Event date： 2010.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  531. Coナノドットの帯電および帯磁評価

    川浪彰、牧原克典、池田弥央、芦原龍平、宮崎誠一

    第57回春季応用物理学会 

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    Event date： 2010.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  532. Si量子ドット/NiSiナノドットハイブリッドフローティングゲートの光応答特性

    森澤直也、池田弥央、中西翔、川浪彰、牧原克典、東清一郎、宮崎誠一

    第57回春季応用物理学会 

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    Event date： 2010.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  533. リモート水素プラズマ支援によるPtAlナノドットの形成

    芦原龍平, 牧原克典、川浪彰、池田弥央、大田晃生、宮崎誠一

    第57回春季応用物理学会 

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    Event date： 2010.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  534. Pt/a-Ge:Hのリモート水素プラズマ処理によるPtGe薄膜形成

    宮崎裕介、牧原克典、池田弥央、東清一郎、宮崎誠一

    第57回春季応用物理学会 

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    Event date： 2010.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  535. SiO2/Si/SiGe0.5/Siヘテロ構造の価電子帯オフセット評価

    大田晃生、牧原克典、宮崎誠一、櫻庭政夫、室田淳一

    第57回春季応用物理学会 

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    Event date： 2010.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  536. The Effect of Anneal Ambient on Resistive Switching Properties with Pt/TiO2/Pt Structure

    尉国浜、大田晃生、牧原克典、宮崎誠一

    第57回春季応用物理学会 

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    Event date： 2010.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  537. Temporal Change in the Native Oxidation of Chemically-cleaned Ge(100) Surfaces

    Siti Kudnie Sahari、村上秀樹、藤岡知宏、坂東竜也、大田晃生、牧原克典、東清一郎、宮崎誠一

    第57回春季応用物理学会 

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    Event date： 2010.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東海大学   Country：Japan  

  538. Evaluation of Valence Band Offsets for SiO2/Si/SiGe0.5/Si Heterostructures Using by X-ray Photoelectron Spectroscopy International conference

    A. Ohta, K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota

    5th International Workshop in New Group IV Semiconductor Nanoelectronics 

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    Event date： 2010.1

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  539. Formation of Hybrid Nanodots Floating Gate for Functional Memories Charge Storage Characteristics and Optical Response International conference

    S. Miyazaki, N. Morisawa, S. Nakanishi, K. Makihara and M. Ikeda

    5th International Workshop in New Group IV Semiconductor Nanoelectronics 

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    Event date： 2010.1

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  540. Impact of Surface Pre-Treatment on Metal Migration Induced by Remote H2-Plasma Treatment International conference

    K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki

    2009 International Microprocesses and Nanotechnology Conference 

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    Event date： 2009.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  541. Charge Injection Characteristics of NiSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in MOS Structures International conference

    M. Ikeda, S. Nakanishi, M. Morisawa, K. Makihara and S. Miyazaki

    2009 International Microprocesses and Nanotechnology Conference 

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    Event date： 2009.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  542. Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories International conference

    2009 MRS Fall Meeting, 

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    Event date： 2009.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  543. Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2 International conference

    K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki

    214th Electrochemical Society Meeting : SiGe & Ge Materials, Processing and Device Symposium 

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    Event date： 2009.10

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  544. New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor International conference

    M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh

    2009 International Conference on Solid State Devices and Materials 

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    Event date： 2009.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  545. Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structure International conference

    N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki

    2009 International Conference on Solid State Devices and Materials 

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    Event date： 2009.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  546. Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma International conference

    A. Kawanami, K. Makihara, M. Ikeda and S. Miyazaki

    International Symposium on Dry Process  

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    Event date： 2009.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  547. リモート水素プラズマ支援による表面Pt被覆したa-Ge薄膜の局所結晶化

    宮崎佑介、牧原克典、川浪彰、岡田竜也、池田弥央、東清一郎、宮崎誠一

    第70回秋季応用物理学会 

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    Event date： 2009.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：富山大学   Country：Japan  

  548. 表面前処理がリモート水素プラズマ支援金属マイグレーションに及ぼす影響

    川浪彰、牧原克典、池田弥央、東清一郎、宮崎誠一

    第70回秋季応用物理学会 

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    Event date： 2009.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：富山大学   Country：Japan  

  549. リモート水素プラズマ支援によるCoおよびCoシリサイドナノドット形成

    川浪彰、牧原克典、池田弥央、東清一郎、宮崎誠一

    第70回秋季応用物理学会 

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    Event date： 2009.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：富山大学   Country：Japan  

  550. Si量子ドット/NiSiナノドットハイブリッド積層FG-MOS構造における光誘起電荷移動

    森澤直也、池田弥央、中西翔、川浪彰、牧原克典、東清一郎、宮崎誠一

    第70回秋季応用物理学会 

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    Event date： 2009.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：富山大学   Country：Japan  

  551. NiSiナノドット/Si量子ドット積層ハイブリッドフローティングゲートにおける電荷注入・放出特性

    中西翔、池田弥央、森澤直也、牧原克典、川浪彰、東清一郎、宮崎誠一

    第70回秋季応用物理学会 

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    Event date： 2009.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：富山大学   Country：Japan  

  552. Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation International conference

    23rd International Conference on Amorphous and Nanocrystalline Semiconductor 

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    Event date： 2009.8

    Language：English   Presentation type：Oral presentation (general)  

    Country：Netherlands  

  553. Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application International conference

    S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto

    International Conference on Processing and Manufacturing of Advanced Materials, Processing, Fabrication, Properties 

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    Event date： 2009.8

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：Germany  

  554. Selective Crystallization of a-Ge:H Thin Films by Pt-coating and Exposing to Remote H2 Plasma International conference

    23rd International Conference on Amorphous and Nanocrystalline Semiconductor 

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    Event date： 2009.8

    Language：English   Presentation type：Oral presentation (general)  

    Country：Netherlands  

  555. Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots International conference

    Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

    The 18th International Conference on Electronic Properties of Two-Dimensional Systems 

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    Event date： 2009.7

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  556. Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices International conference

    14th International Conference on Modulated Semiconductor 

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    Event date： 2009.7

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  557. Formation Mechanism of Metal Nanodots Induced by Remote Plasma Exposure International conference

    K. Makihara, K. Shimanoe, A. Kawanami, A. Fujimoto, M. Ikeda, S. Higashi and S. Miyazaki

    The European Materials Research Society 2009 Spring Meeting 

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    Event date： 2009.6

    Language：English   Presentation type：Poster presentation  

    Country：France  

  558. Electrical Detection of Silicon Binding Protein-Protein A using a p-MOSFET Sensor International conference

    H. Murakami, S. Mahboob, K. Katayama, K. Makihara, M. Ikeda, Y. Hata, A. Kuroda, S. Higashi and S. Miyazaki

    2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2009.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  559. Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots International conference

    K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki

    2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2009.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  560. Electrical Charging Characteristics of NiSi-Nanodots Floating Gate International conference

    S. Nakanishi, M. Ikeda, K. Shimanoe, K. Makihara, A. Kawanami, N. Morisawa, A. Fujimoto, S. Higashi and S. Miyazaki

    International Meeting for Future of Electron Devices, Kansai 

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    Event date： 2009.5

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  561. Temperature Dependence of Electron Tunneling from Two Dimensional Electron Gas to Quantum Dots International conference

    Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara and S. Miyazaki

    America Physical Society 2009 March Meeting 

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    Event date： 2009.3

    Language：English   Presentation type：Poster presentation  

    Country：United States  

  562. New Insight into Tunneling Process between Quantum Dot and Electron Gas International conference

    M. Muraguchi, T. Endoh, Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki and Y. Shigeta

    America Physical Society 2009 March Meeting 

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    Event date： 2009.3

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  563. 電子ガス－量子ドット結合系における電子ダイナミクスII

    村口正和、遠藤哲郎、櫻井蓉子、野村晋太郎、高田幸宏、白石賢二、池田弥央、牧原克典、宮崎誠一、斉藤慎一

    日本物理学会第64回年次大会 

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    Event date： 2009.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：立教大学   Country：Japan  

  564. 電子ガス―量子ドット結合系におけるC-V特性およびI-V特性のSweep Rate依存性

    櫻井蓉子、野村晋太郎、高田幸宏、白石賢二、村口正和、遠藤哲郎、池田弥央、牧原克典、宮崎誠一

    日本物理学会第64回年次大会 

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    Event date： 2009.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：立教大学   Country：Japan  

  565. HfO2コントロール酸化膜を有するNiSiドット/Si量子ドット積層ハイブリッドフローティングゲートMOSキャパシタにおける電子注入特性

    池田弥央、牧原克典、島ノ江和広、川浪彰、中西翔、森澤直也、藤本淳仁、大田晃生、貫目大介、宮崎誠一

    第56回春季応用物理学会 

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    Event date： 2009.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：筑波大学   Country：Japan  

  566. Surface Potential Changes Induced by Physisorption of Silica Binding Protein-Protein A on Thermally Grown SiO2/Si(111) Surface

    S. Mahboob，K. Makihara，M. Ikeda，S. Higashi，S. Miyazaki，Y. Hata and A. Kuroda

    第56回春季応用物理学会 

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    Event date： 2009.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：筑波大学   Country：Japan  

  567. 超高密度Si量子ドットにおける二次元電気伝導

    牧原克典、池田弥央、川浪彰、東清一郎、宮崎誠一

    第56回春季応用物理学会 

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    Event date： 2009.3

    Language：Japanese   Presentation type：Poster presentation  

    Venue：筑波大学   Country：Japan  

  568. Si量子ドットフローティングゲートMOSキャパシタにおける過渡電流特性

    櫻井蓉子、野村晋太郎、白石賢二、村口正和、遠藤哲郎、池田弥央、牧原克典、宮崎誠一

    第56回春季応用物理学会 

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    Event date： 2009.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：筑波大学   Country：Japan  

  569. 電子励起状態を介した量子ドットへのトンネル現象の変調

    野村晋太郎、櫻井蓉子、高田幸宏、白石賢二、村口正和、遠藤哲郎、池田弥央、牧原克典、宮崎誠一

    第56回春季応用物理学会 

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    Event date： 2009.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：筑波大学   Country：Japan  

  570. 少数電子で動く未来デバイスの姿 –量子電子ダイナミクスからのメッセージ-

    村口正和、遠藤哲郎、宮崎誠一、牧原克典、池田弥央、野村晋太郎、櫻井蓉子、高田幸宏、白石賢二

    第56回春季応用物理学会 

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    Event date： 2009.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：筑波大学   Country：Japan  

  571. 電子ガス－量子ドット結合系における電子構造Ⅱ

    高田幸宏、櫻井蓉子、村口正和、池田弥央、牧原克典、宮崎誠一、遠藤哲郎、野村晋太郎、白石賢二

    日本物理学会第64回年次大会 

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    Event date： 2009.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：立教大学   Country：Japan  

  572. Temperature Dependence of Electron Transport between Quantum Dots and Electron Gas International conference

    Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara and S. Miyazaki

    International Symposium on Nanoscale Transport and Technology, 

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    Event date： 2009.1

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  573. Impact of Remote Plasma Treatment on Formation of Metal Nanodots on Ultrathin SiO2 International conference

    A. Kawanami, K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki

    The 2nd International Conference on Plasma-Nano Technology & Science 

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    Event date： 2009.1

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  574. heoretical investigation of quantum dot coupled to a two-dimensional electron system International conference

    M. Muraguchi, Y. Takada, Y. Sakurai, T. Endoh, S. Nomura, M. Ikeda, K. Makihara, S. Miyazaki and K. Shiraishi

    13th Advanced Heterostructures and Nanostructures Workshop 

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    Event date： 2008.12

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  575. Capacitance measurements on quantum dots coupled to a two-dimensional electron system International conference

    S. Nomura, Y. Sakurai, Y. Takada, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara, S. Miyazaki and K. Shiraishi

    13th Advanced Heterostructures and Nanostructures Workshop 

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    Event date： 2008.12

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  576. Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique International conference

    K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi and S. Miyazaki

    International Union Material Research Society - International Conference in Asia 2008 

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    Event date： 2008.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  577. Metal Nanodots Formation Induced by Remote Plasma Treatment Comparison between the effects of H2 and rare gas plasmas International conference

    K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki

    International Union Material Research Society - International Conference in Asia 2008 

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    Event date： 2008.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  578. Characterization of Chemical Bonding Features and Electronic States of Ni-Silicide Nanodots Formed by a Remote H2-Plasma Assisted Technique International conference

    K. Makihara, A. Ohta, R. Matsumoto, M. Ikeda, K. Shimanoe, S. Higashi and S. Miyazaki

    The 4th Vacuum and Surface Sciences Conference of Asia and Australia 

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    Event date： 2008.10

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  579. Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application International conference

    S. Miyazaki, M. Ikeda, K. Makihara and K. Shimanoe

    The European Materials Research Society 2008 Fall Meeting 

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    Event date： 2008.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Poland  

  580. Formation of Metallic Nanodots on Ultrathin Gate Oxide Induced by H2-plasma Treatment and Its Application to Floating Gate Memories International conference

    S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto

    4th International Workshop in New Group IV Semiconductor Nanoelectronics 

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    Event date： 2008.9

    Language：English   Presentation type：Oral presentation (invited, special)  

    Country：Japan  

  581. AFM/KFM Detection of Si-tagged ProteinA on HF-last Si(100), Thermally Grown SiO2 and Si-QDs Surfaces International conference

    K. Makihara, M. Ikeda, S. Higashi, Y. Hata, A. Kuroda and S. Miyazaki

    4th International Workshop in New Group IV Semiconductor Nanoelectronics 

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    Event date： 2008.9

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  582. Formation of Ultra High Density Si-based Quantum Dots on Ultrathin SiO2 International conference

    K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki

    4th International Workshop in New Group IV Semiconductor Nanoelectronics 

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    Event date： 2008.9

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  583. Charge Injection and Emission Characteristics of Hybrid Floating Gate Stack Consisting of NiSi-Nanodots and Silicon-Quantum-Dots International conference

    M. Ikeda, R. Matsumoto, K. Shimanoe, K. Makihara and S. Miyazaki

    2008 International Conference on Solid State Devices and Materials 

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    Event date： 2008.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  584. AFM/KFMによる水素終端Si表面およびSi熱酸化膜表面に吸着したSi結合タンパク質の電気的検出

    牧原克典、Syed Mahboob、池田弥央、東清一郎、宮崎誠一、黒田章夫

    第69回秋季応用物理学会 

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    Event date： 2008.9

    Language：Japanese   Presentation type：Poster presentation  

    Venue：中部大学   Country：Japan  

  585. 量子ドットフローティングメモリの低温におけるC-V特性

    櫻井蓉子、野村晋太郎、白石賢二、池田弥央、牧原克典、宮崎誠一

    日本物理学会 2008年秋季大会 

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    Event date： 2008.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：岩手大学   Country：Japan  

  586. 量子ドットフローティングメモリの低温におけるC-V特性

    櫻井蓉子、野村晋太郎、白石賢二、池田弥央、牧原克典、宮崎誠一

    第69回秋季応用物理学会 

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    Event date： 2008.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：中部大学   Country：Japan  

  587. シリコン量子ドットフローティングゲート型メモリの理論的考察

    高田幸宏、村口正和、櫻井蓉子、野村晋太郎、池田弥央、牧原克典、宮崎誠一、白石賢二

    第69回秋季応用物理学会 

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    Event date： 2008.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：中部大学   Country：Japan  

  588. NiナノドットフローティングゲートMOSキャパシタにおける電荷保持特性

    池田弥央、島ノ江和広、牧原克典、宮崎誠一

    第69回秋季応用物理学会 

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    Event date： 2008.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：中部大学   Country：Japan  

  589. Si量子ドットの核発生制御と高密度形成

    川浪彰、牧原克典、池田弥央、東清一郎、宮崎誠一

    第69回秋季応用物理学会 

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    Event date： 2008.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：中部大学   Country：Japan  

  590. リモートプラズマ支援による金属ナノドット形成－希ガスプラズマと水素プラズマの比較

    島ノ江和広、牧原克典、池田弥央、東清一郎、宮崎誠一

    第69回秋季応用物理学会 

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    Event date： 2008.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：中部大学   Country：Japan  

  591. Characteristics tunneling of Si quantum dot floating gate at low temperature and in magnetic fields International conference

    Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara and S. Miyazaki

    25th International Conference on Low Temperature Physics 

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    Event date： 2008.8

    Language：English   Presentation type：Oral presentation (general)  

    Country：Netherlands  

  592. Electrical Detection of Si-tagged Proteins on HF-last Si(100) and Thermally Grown SiO2 Surfaces International conference

    S. Mahboob, K. Makihara, H. Kaku, M. Ikeda, S. Higashi, S. Miyazaki and A. Kuroda

    2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2008.7

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  593. Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories International conference

    K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi and S. Miyazaki

    2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2008.7

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  594. Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4 International conference

    H. Kaku, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki

    2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2008.7

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  595. Selective Growth of Self-Assembling Si and SiGe Quantum Dots International conference

    K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki

    4th International SiGe Technology and Device Meeting 

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    Event date： 2008.5

    Language：English   Presentation type：Poster presentation  

    Country：Taiwan, Province of China  

  596. Formation of Ni- and Pt-Nanodots Induced by Remote Hydrogen Plasma Treatment and Their Application to Floating Gate MOS Memories International conference

    M. Ikeda, K. Shimanoe, R. Matsumoto, K. Makihara and S. Miyazaki

    The 2008 International Meeting for Future of Electron Devices, Kansai 

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    Event date： 2008.5

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  597. High Rate Growth of Highly Crystallized Ge:H Thin Films from VHF Inductively-Coupled Plasma of GeH4 International conference

    Y. Ono, H. Kaku, K. Makihara, S. Higashi and S. Miyazaki

    The 1st International Conference on Plasma-Nano Technology & Science 

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    Event date： 2008.3

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  598. SiGe量子ドットの一次元配列成長

    川浪彰、牧原克典、池田弥央、松本龍児、山本雄治、東清一郎、宮崎誠一

    第55回春季応用物理学会 

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    Event date： 2008.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：日本大学   Country：Japan  

  599. GeH4 VHF-ICP による高結晶性Ge:H 膜の高速堆積

    小埜芳和、加久博隆、牧原克典、東清一郎、宮崎誠一

    第55回春季応用物理学会 

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    Event date： 2008.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：日本大学   Country：Japan  

  600. NiSiドット/Si量子ドット積層ハイブリッドフローティングゲートMOSキャパシタにおける電荷保持特性

    松本龍児、池田弥央、牧原克典、島ノ江和広、東清一郎、宮崎誠一

    第55回春季応用物理学会 

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    Event date： 2008.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：日本大学   Country：Japan  

  601. NiSiドット/Si量子ドット積層ハイブリッドフローティングゲートMOSキャパシタにおける電子注入・放出特性

    松本龍児、池田弥央、牧原克典、島ノ江和広、東清一郎、宮崎誠一

    第55回春季応用物理学会 

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    Event date： 2008.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：日本大学   Country：Japan  

  602. リモート水素プラズマ支援によるPd ナノドット形成

    島ノ江和広、牧原克典、池田弥央、松本龍児、東清一郎、宮崎誠一

    第55回春季応用物理学会 

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    Event date： 2008.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：日本大学   Country：Japan  

  603. リモート水素プラズマ支援により形成したNiシリサイドナノドットの化学結合状態および電子状態評価

    牧原克典、大田晃生、松本龍児、池田弥央、島ノ江和広、東清一郎、宮崎誠一

    第55回春季応用物理学会 

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    Event date： 2008.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：日本大学   Country：Japan  

  604. AFM/KFMによる高密度Ptシリサイドナノドットの帯電状態計測

    西原良祐、牧原克典、池田弥央、松本龍児、東清一郎、宮崎誠一

    第55回春季応用物理学会 

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    Event date： 2008.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：日本大学   Country：Japan  

  605. Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors International conference

    M. Ikeda, R. Matsumoto, K. Shimanoe, T. Okada, K. Makihara, S. Higashi and S. Miyazaki

    3rd International Workshop in New Group IV Semiconductor Nanoelectronics 

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    Event date： 2007.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  606. Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique International conference

    R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki

    The Sixth Pacific Rim International Conference on Advanced Materials and Processing 

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    Event date： 2007.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  607. High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2 International conference

    T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki

    The Sixth Pacific Rim International Conference on Advanced Materials and Processing 

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    Event date： 2007.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  608. Formation of PtSi Nanodots Induced by Remote H2 Plasma International conference

    K. Shimanoe, K. Makihara, A. Ohta, M. Ikeda, S. Higashi and S. Miyazaki

    3rd International Workshop in New Group IV Semiconductor Nanoelectronics 

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    Event date： 2007.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  609. High Rate Growth of Crystalline Ge Films at Low Temperatures by Controlling 60MHz Inductively-Coupled Plasma of H2-diluted GeH4 International conference

    S. Miyazaki, T. Sakata, K. Makihara, M. Ikeda

    3rd International Workshop in New Group IV Semiconductor Nanoelectronics 

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    Event date： 2007.11

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  610. Formation of Pt Nanodots Induced by Remote Hydrogen Plasma International conference

    The 18th Symposium of The Materials Research Society of Japan 

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    Event date： 2007.11

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  611. Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots International conference

    2007 International Conference on Solid State Devices and Materials 

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    Event date： 2007.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  612. Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-Plasma Treatment and Their Electrical Charging Characteristics International conference

    2007 International Conference on Solid State Devices and Materials 

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    Event date： 2007.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  613. NiSiドット/Si量子ドット積層構造フローティングゲートMOSキャパシタにおける電荷注入特性

    松本龍児、池田弥央、牧原克典、岡田竜弥、島ノ江和広、東清一郎、宮崎誠一

    第68回秋季応用物理学会 

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    Event date： 2007.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：北海道工業大学   Country：Japan  

  614. リモート水素プラズマ処理によるPtナノドット密度制御

    島ノ江和広、牧原克典、池田弥央、東清一郎、宮崎誠一

    第68回秋季応用物理学会 

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    Event date： 2007.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：北海道工業大学   Country：Japan  

  615. Phosphorus Doping to Si Quantum Dots for Floating Gate Application International conference

    K. Makihara, M. Ikeda, A. Ohta, H. Murakami, R. Matsumoto, E. Ikenaga, M. Kobata, J. Kim, S. Higashi and S. Miyazaki

    2007 Silicon Nanoelectronics Workshop 

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    Event date： 2007.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  616. Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM International conference

    K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki

    2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2007.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  617. Impact of Boron Doping to Si Quantum Dots on Light Emission Properties International conference

    K. Okuyama, K. Makihara, A. Ohta, H. Murakami, M. Ikeda, S. Higashi and S. Miyazaki

    2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2007.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  618. Formation of Ni Nanodots Induced by Remote Hydrogen Plasma International conference

    K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki

    The European Materials Research Society 2007 Spring Meeting 

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    Event date： 2007.5

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  619. Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics International conference

    K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki

    5th International Conference on Silicon Epitaxy and Heterostructures 

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    Event date： 2007.5

    Language：English   Presentation type：Poster presentation  

    Country：France  

  620. Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4 International conference

    T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki

    5th International Conference on Silicon Epitaxy and Heterostructures 

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    Event date： 2007.5

    Language：English   Presentation type：Poster presentation  

    Country：France  

  621. Luminescence Study of Multiply-Stacked Structures Consisting of Impurity-Doped Si Quantum Dots and Ultrathin SiO2 International conference

    K. Makihara, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki

    The 2007 International Meeting for Future of Electron Devices, Kansai 

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    Event date： 2007.4

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  622. 不純物添加がGeコアSi量子ドットの帯電状態に及ぼす影響

    牧原克典、池田弥央、東清一郎、宮崎誠一

    第54回春季応用物理学会 

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    Event date： 2007.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  623. GeH4 VHF-ICPからのGe結晶薄膜の低温・高速成長－基板依存性

    坂田務、出木秀典、牧原克典、東清一郎、宮崎誠一

    第54回春季応用物理学会 

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    Event date： 2007.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  624. GeH4 VHF-ICPからの高結晶性Ge薄膜の低温高速堆積

    坂田務、牧原克典、東清一郎、宮崎誠一

    第54回春季応用物理学会 

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    Event date： 2007.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  625. AFM/KFMによる孤立NiSiドットの帯電状態計測

    西原良祐、牧原克典、川口恭裕、池田弥央、村上秀樹、東清一郎、宮崎誠一

    第54回春季応用物理学会 

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    Event date： 2007.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  626. リモート水素プラズマ支援によるNiナノドット形成－ドット密度制御

    島ノ江和広、牧原克典、川口恭裕、奥山一樹、西原良祐、池田弥央、松本龍児、東清一郎、宮崎誠一

    第54回春季応用物理学会 

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    Event date： 2007.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  627. 不純物添加Si量子ドット/SiO2多重集積構造からの発光

    川口恭裕、牧原克典、東清一郎、宮崎誠一

    第54回春季応用物理学会 

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    Event date： 2007.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：青山学院大学   Country：Japan  

  628. 不純物添加NiSi/SiO2ゲートスタック構造の界面評価

    細井卓治、佐野孝輔、日野真毅、大田晃生、牧原克典、加久博隆、宮崎誠一、芝原健太郎

    ゲートスタック研究会 (第11回研究会) 極薄シリコン酸化膜の形成・評価・信頼性 

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    Event date： 2006.11

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：静岡   Country：Japan  

  629. High Rate Growth of Highly-Crystallized Ge:H Films from VHF Inductively-Coupled Plasma of GeH4 International conference

    The 17th Symposium of The Materials Research Society of Japan 

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    Event date： 2006.11

    Language：English   Presentation type：Oral presentation (general)  

  630. Luminescence Study of Multiply-Stacked Si Quantum Dots International conference

    The 17th Symposium of The Materials Research Society of Japan 

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    Event date： 2006.11

    Language：English   Presentation type：Oral presentation (general)  

  631. Study of Charged states of Si Quantum Dots with Ge Core International conference

    K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki

    210th Electrochemical Society Meeting : SiGe & Ge Materials, Processing, and Device Symposium 

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    Event date： 2006.10

    Language：English   Presentation type：Poster presentation  

    Country：Mexico  

  632. Formation of Highly-Crystallized Ge:H Films form VHF Inductively-Coupled Plasma of GeH4 International conference

    T. Sakata, K. Makihara, S. Higashi and S. Miyazaki

    2nd International Workshop in New Group IV Semiconductor Nanoelectronics  

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    Event date： 2006.10

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  633. Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using AFM/Kelvin Probe Technique International conference

    K. Makihara, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki

    International Union Material Research Society - International Conference in Asia 

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    Event date： 2006.9

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  634. AFM/KFMによるNiSiドットの帯電状態評価

    西原良祐、牧原克典、川口恭裕、池田弥央、村上秀樹、東清一郎、宮崎誠一

    応用物理学会2006年度中国四国支部例会 

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    Event date： 2006.8

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：徳島大学   Country：Japan  

  635. GeH4 VHF-ICPからの高結晶性Ge:H薄膜の形成

    坂田務、牧原克典、東清一郎、宮崎誠一

    第67回秋季応用物理学会 

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    Event date： 2006.8

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：立命館大学   Country：Japan  

  636. Si量子ドット/SiO2多重集積構造からの発光特性

    川口恭裕、牧原克典、池田弥央、村上秀樹、東清一郎、宮崎誠一

    第67回秋季応用物理学会 

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    Event date： 2006.8

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：立命館大学   Country：Japan  

  637. AFM/KFMによるNiSiドットの帯電状態計測

    西原良祐、牧原克典、松本龍児、池田弥央、村上秀樹、東清一郎、宮崎誠一

    第67回秋季応用物理学会 

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    Event date： 2006.8

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：立命館大学   Country：Japan  

  638. AFM/ケルビンプローブによる不純物添加Si量子ドットの帯電評価

    牧原克典、川口恭裕、東清一郎、宮崎誠一

    第67回秋季応用物理学会 

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    Event date： 2006.8

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：立命館大学   Country：Japan  

  639. Charging and Discharging Characteristics of P-doped Si Quantum Dots Floating Gate International conference

    K. Makihara, T. Nagai, M. Ikeda, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki

    The 2006 International Meeting for Future of Electron Devices, Kansai 

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    Event date： 2006.7

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  640. 価電子制御したSi量子ドットフローティングにおける電荷注入・放出特性

    牧原克典、永井武志、池田弥央、川口恭裕、村上秀樹、東清一郎、宮崎誠一

    第53回春季応用物理学会 

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    Event date： 2006.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：武蔵工業大学   Country：Japan  

  641. H2希釈GeH4ガスVHF-ICPからの高結晶性Ge:H薄膜の形成

    坂田務、牧原克典、東清一郎、宮崎誠一

    第53回春季応用物理学会 

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    Event date： 2006.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：武蔵工業大学   Country：Japan  

  642. AFM/KFMによるSi量子ドット/SiO2多重集積構造の帯電電荷分布計測

    西谷純一郎、牧原克典、川口恭裕、池田弥央、東清一郎、宮崎誠一

    第53回春季応用物理学会 

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    Event date： 2006.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：武蔵工業大学   Country：Japan  

  643. Characterization of Sb-Doped Fully-Silicided NiSi/SiO2/Si MOS Structure International conference

    T. Hosoi, K. Sano, M. Hino, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki, and K. Shibahara

    2005 International Semiconductor Device Research Symposium 

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    Event date： 2005.12

    Language：English   Presentation type：Oral presentation (general)  

    Country：United States  

  644. Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4 International conference

    T. Sakata, K. Makihara, S. Higashi and S. Miyazaki

    2005 International Symposium on Dry Process 

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    Event date： 2005.11

    Language：English   Presentation type：Poster presentation  

    Country：Korea, Republic of  

  645. Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS Devices International conference

    The 16th Symposium of The Materials Research Society of Japan 

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    Event date： 2005.11

    Language：English   Presentation type：Oral presentation (general)  

  646. AFM/ケルビンプローブによるBドープSi量子ドットの帯電状態評価

    牧原克典、川口恭裕、東清一郎、宮崎誠一

    第66回秋季応用物理学会 

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    Event date： 2005.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：徳島大学   Country：Japan  

  647. GeH4 VHF-ICPからの高結晶性Ge:H薄膜の高速堆積

    坂田務、牧原克典、東清一郎、宮崎誠一

    第66回秋季応用物理学会 

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    Event date： 2005.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：徳島大学   Country：Japan  

  648. AFM/ケルビンプローブによるNiSiドットの帯電状態評価

    持留雅志、西谷純一郎、牧原克典、多比良昌弘、池田弥央、東清一郎、宮崎誠一

    第66回秋季応用物理学会 

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    Event date： 2005.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：徳島大学   Country：Japan  

  649. AFM/ケルビンプローブによる孤立Si量子ドットの電荷保持特性評価

    西谷純一郎、牧原克典、池田弥央、村上秀樹、東清一郎、宮崎誠一

    第66回秋季応用物理学会 

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    Event date： 2005.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：徳島大学   Country：Japan  

  650. AFM/ケルビンプローブによるPドープSi量子ドットの帯電状態評価

    牧原克典、徐駿、川口恭裕、村上秀樹、東清一郎、宮崎誠一

    応用物理学会2005年度中国四国支部例会 

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    Event date： 2005.7

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：島根大学   Country：Japan  

  651. Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots International conference

    J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki

    2005 China International Conference on Nanoscience & Technology 

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    Event date： 2005.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：China  

  652. Experimental Evidence of Coulombic Interaction among Stored Charges in Single Si Dot as Detected By AFM/Kelvin Probe Technique International conference

    J. Nishitani, K. Makihara, Y. Darma, H. Murakami, S. Higashi and S. Miyazaki

    2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices  

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    Event date： 2005.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  653. The Application of Multiple-Stacked Si Quantum Dots to Light Emitting Diodes International conference

    K. Makihara, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki

    2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices  

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    Event date： 2005.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  654. Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/KFM Probe International conference

    K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higasi and S. Miyazaki

    Fourth International Conference on Silicon Epitaxy and Heterostructures 

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    Event date： 2005.5

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  655. Fabrication of Multiply-Stacked Structures Consisting of Si-QDs with Ultrathin SiO2 and Its Application of Light Emitting Diodes International conference

    K. Makihara, J. Xu, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki

    First International Workshop in New GroupIV Semiconductor Nanoelectronics 

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    Event date： 2005.5

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  656. Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique International conference

    J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higasi and S. Miyazaki

    Fourth International Conference on Silicon Epitaxy and Heterostructures 

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    Event date： 2005.5

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  657. Light Emitting Devices from Multilayered Si Quantum Dots Structures International conference

    K. Makihara, J. Xu, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki

    The 2005 International Meeting for Future of Electron Devices, Kansai 

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    Event date： 2005.4

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  658. AFM/ケルビンプローブによるPドープSi量子ドットの帯電状態評価

    牧原克典、徐駿、川口恭裕、東清一郎、宮崎誠一

    第52回春季応用物理学会 

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    Event date： 2005.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：埼玉大学   Country：Japan  

  659. Electronically-Driven Light Emitting Diode Based on Si Quantum Dots Multilayers

    J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki

    第52回春季応用物理学会 

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    Event date： 2005.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：埼玉大学   Country：Japan  

  660. AFM/ケルビンプローブによるSi量子ドットの電荷保持特性評価

    西谷純一郎、牧原克典、池田弥央、東清一郎、宮崎誠一

    第52回春季応用物理学会 

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    Event date： 2005.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：埼玉大学   Country：Japan  

  661. Fabrication of Multiple-Stacked Si Quantum Dots and Its Application to Light Emitting Diodes International conference

    K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki

    The 4th International Symposium on Nanotechnology 

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    Event date： 2005.2

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  662. Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in SiO2 by Combination of Low-Pressure CVD with Remote Plasma Treatments International conference

    K. Makihara, H. Nakagawa, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki

    2004 International Microprocesses and Nanotechnology Conference 

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    Event date： 2004.10

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  663. リモート水素及び酸素プラズマ前処理によるSiドット核密度制御

    牧原克典、出木秀典、池田弥央、東清一郎、宮崎誠一

    第65回秋季応用物理学会 

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    Event date： 2004.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東北学院大学   Country：Japan  

  664. ICPプラズマによる微結晶Ge:H膜成長制御-アモルファスインキュベーション層の堆積速度依存性

    岡本祥裕、牧原克典、東清一郎、宮崎誠一

    第65回秋季応用物理学会 

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    Event date： 2004.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東北学院大学   Country：Japan  

  665. ドライ一貫プロセスによる高密度Siドット/SiO2立体積層構造の作成

    牧原克典、中川博、池田弥央、東清一郎、宮崎誠一

    第65回秋季応用物理学会 

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    Event date： 2004.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東北学院大学   Country：Japan  

  666. Formation of Microcrystalline Germanium (mc-Ge:H) Films From Inductively-Coupled Plasma CVD International conference

    Y. Okamoto, K. Makihara, S. Higasi and S. Miyazaki

    12th International Conference on Solid Films and Surface  

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    Event date： 2004.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  667. Characterization of germanium nanocrystallites grown on quartz by a conductive AFM probe technique International conference

    K. Makihara, Y. Okamoto, H. Murakami, S. Higashi and S. Miyazaki

    2004 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2004.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  668. Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment International conference

    K. Makihara, H. Deki, H. Murakami, S. Higasi and S. Miyazaki

    12th International Conference on Solid Films and Surface  

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    Event date： 2004.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  669. AFM/ケルビンプローブによる高密度Si量子ドットの帯電状態評価

    牧原克典、柴口拓、村上秀樹、東清一郎、宮崎誠一

    第51回春季応用物理学会 

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    Event date： 2004.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京工科大学   Country：Japan  

  670. 誘導結合型GeH4プラズマによる微結晶ゲルマニウム (μc-Ge:H) 膜の形成

    岡本祥裕、牧原克典、Kosku Nihan、村上秀樹、東清一郎、宮崎誠一

    第51回春季応用物理学会 

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    Event date： 2004.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京工科大学   Country：Japan  

  671. リモート水素プラズマ処理によるSiドット核密度制御

    牧原克典、出木秀典、村上秀樹、東清一郎、宮崎誠一

    第51回春季応用物理学会 

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    Event date： 2004.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：東京工科大学   Country：Japan  

  672. 導電性AFM探針による結晶性ゲルマニウム薄膜の伝導評価

    牧原克典、岡本祥裕、村上秀樹、東清一郎、宮崎誠一

    第64回秋季応用物理学会 

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    Event date： 2003.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：福岡大学   Country：Japan  

  673. 誘導結合型GeH4プラズマによる微結晶ゲルマニウム (μc-Ge:H) 膜堆積

    岡本祥裕、牧原克典、Kosku Nihan、村上秀樹、東清一郎、宮崎誠一

    第64回秋季応用物理学会 

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    Event date： 2003.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：福岡大学   Country：Japan  

  674. 誘導結合型プラズマCVD法による結晶性ゲルマニウム膜の形成

    岡本祥裕、牧原克典、村上秀樹、東清一郎、宮崎誠一

    応用物理学会2003年度中国四国支部例会 

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    Event date： 2003.8

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：山口大学   Country：Japan  

  675. 微結晶ゲルマニウムの局所電気伝導評価

    牧原克典、岡本祥裕、村上秀樹、東清一郎、宮崎誠一

    応用物理学会2003年度中国四国支部例会 

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    Event date： 2003.8

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：山口大学   Country：Japan  

  676. Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe International conference

    K. Makihara, Y. Okamoto, H. Nakagawa, H. Murakami, S. Higashi and S. Miyazaki

    The 16th Symposium on Plasma Science for Materials 

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    Event date： 2003.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Japan  

  677. Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probe International conference

    K. Makihara, Y. Okamoto, M. Ikeda, H. Murakami and S. Miyazaki

    2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date： 2003.6

    Language：English   Presentation type：Oral presentation (general)  

    Country：Korea, Republic of  

  678. 導電性AFM探針による微結晶ゲルマニウムの局所電気伝導評価

    牧原克典、竹内耕平、池田弥央、村上秀樹、宮崎誠一

    第50回春季応用物理学会 

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    Event date： 2003.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：神奈川大学   Country：Japan  

  679. 導電性AFM探針による微結晶ゲルマニウム(c-Ge:H)の核形成及び成長評価

    牧原克典、竹内耕平、池田弥央、村上秀樹、宮崎誠一

    第20回プラズマプロセシング研究会 

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    Event date： 2003.1

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：長岡   Country：Japan  

  680. 導電性AFMカンチレバーを用いた微結晶ゲルマニウム(c-Ge:H)の核形成及び成長評価

    牧原克典、竹内耕平、池田弥央、村上秀樹、宮崎誠一

    第29回アモルファス物質の物性と応用セミナー 

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    Event date： 2002.11

    Language：Japanese   Presentation type：Poster presentation  

    Venue：東京   Country：Japan  

  681. 導電性カンチレバーを用いた微結晶ゲルマニウム(c-Ge:H)の核形成及び成長評価

    牧原克典、竹内耕平、池田弥央、村上秀樹、宮崎誠一

    第63回秋季応用物理学会 

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    Event date： 2002.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：新潟大学   Country：Japan  

  682. Ferromagnetism of The Layered Oxysulfides (La1-xCaxO)Cu1-xNixS (x = 0 and x = y) International conference

    K. Takase, T. Shimizu, K. Makihara, Y. Takahashi, Y. Takano, K. Sekizawa, and M. Koyano

    The 8th International Workshop on Oxide Electronics 

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    Event date： 2002.7

    Language：English   Presentation type：Poster presentation  

    Country：Japan  

  683. Photoluminescence of New Layered Wide Band Gap Semiconductors (LaO)CuS International conference

    M. Koyano , K. Takase , T. Shimizu , K. Makihara ,Y. Takahashi, Y. Takano, K. Sekizawa, and S. Katayama

    26th International Conference on Semiconductor Physics 

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    Event date： 2002.7

    Language：English   Presentation type：Oral presentation (general)  

    Country：United Kingdom  

  684. Room Temperature Ferromagnetism in Semiconductor (La1-xCaxO)Cu1-xNixS International conference

    K. Takase, T. Shimizu, K. Makihara, Y. Takahashi, Y. Takano, and K. Sekizawa

    26th International Conference on Semiconductor Physics 

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    Event date： 2002.7

    Language：English   Presentation type：Oral presentation (general)  

    Country：United Kingdom  

  685. オキシ硫化物(LaO)CuSの電気抵抗とフォトルミネッセンススペクトル

    高瀬浩一、小矢野幹夫、佐藤憲、牧原克典、清水智弘、高橋由美子、高野良紀、関沢和子

    日本物理学会第57回年次大会 

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    Event date： 2002.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：立命館大学   Country：Japan  

  686. LaOCuSにおけるLaおよびCuサイトの同時置換効果

    牧原克典、清水智弘、高橋由美子、高瀬浩一、高野良紀、関澤和子

    日本物理学会2001年秋季大会 

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    Event date： 2001.9

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：徳島大学   Country：Japan  

  687. オキシ硫化物La1-xCaxOCu1-xNixSの輸送現象

    高瀬浩一、清水智弘、松本和弥、牧原克典、高野良紀、関澤和子

    日本物理学会第56回年次大会 

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    Event date： 2001.3

    Language：Japanese   Presentation type：Oral presentation (general)  

    Venue：中央大学   Country：Japan  

  688. Carrier conduction in SiO<inf>2</inf>/GaN structure with abrupt interface International conference

    Truyen N.

    2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018  2018.7.3  2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

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    Language：English   Presentation type：Oral presentation (general)  

    Scopus

  689. Characterization of Electron Field Emission from Multiple-Stacked Ge Core Si-QDs

    12th International WorkShop on New Group IV Semiconductor Nanoelectronics  2018.12.6 

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    Language：English   Presentation type：Poster presentation  

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Research Project for Joint Research, Competitive Funding, etc. 4

  1. 一次元連結磁性合金ナノドットのスピン物性制御と新機能メモリ開発

    2019.7 - 2020.3

    財団法人 立松財団 A1.特別研究助成 

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    Grant type：Competitive

  2. 半導体ナノ構造の金属混晶化精密制御による新機能材料創成

    2013.8 - 2013.12

    ナノテクノロジープラットフォーム 平成25年度 研究設備の試行的利用事業 

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    Grant type：Competitive

  3. 理工農系：サステナブル社会の実現に貢献する自然科学系国際的若手研究者の育成プログラム

    2010.10

    [2] 日本学術振興会 研究者海外派遣基金助成金「組織的な若手研究者等海外派遣プログラム」 

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    Grant type：Competitive

  4. 日本学術振興会 研究者海外派遣基金助成金「組織的な若手研究者等海外派遣プログラム」(広島大学) 理工農系：サステナブル社会の実現に貢献する自然科学系国際的若手研究者の育成プログラム

    2010.10

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KAKENHI (Grants-in-Aid for Scientific Research) 12

  1. Si-Ge系スーパーアトムの内部ポテンシャル変調による量子機能材料創成

    Grant number：19H00762  2019.4 - 2023.3

    科学研究費補助金  基盤研究(A)

    牧原克典

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    Authorship：Principal investigator  Grant type：Competitive

  2. ナノドットの超高密度規則配列と電子・スピン結合制御 International coauthorship

    Grant number：18KK0409  2019 - 2021

    科学研究費補助金  国際共同研究加速基金(国際共同研究強化(A))

    牧原克典

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    Authorship：Principal investigator  Grant type：Competitive

  3. 価電子制御シリコン量子ドットのドット間結合制御による熱起電力創出

    Grant number：17K18877  2017.6 - 2019.3

    科学研究費補助金  挑戦的研究(萌芽)

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    Authorship：Principal investigator  Grant type：Competitive

  4. Ｆｅ系磁性合金ハイブリッドドット創成によるスピン・電子制御と新機能メモリ応用

    Grant number：16H06083  2016.4 - 2019.3

    科学研究費補助金  若手研究(A)

    牧原　克典

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    Authorship：Principal investigator  Grant type：Competitive

  5. 一次元連結ハイブリッドドットのキャリア輸送・保持制御と高効率発光デバイス創成

    Grant number：25709023  2013.4 - 2015.3

    科学研究費補助金  若手研究(A)

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    Authorship：Principal investigator  Grant type：Competitive

  6. 価電子制御シリコン系量子ドット立体集積構造における高輝度エレクトロルミネッセンス

    Grant number：21860061  2009.4 - 2011.3

    科学研究費補助金  研究活動スタート支援

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    Authorship：Principal investigator  Grant type：Competitive

  7. Formation of Ge two-dimensional crystals embedded into Si oxide and its device application

    Grant number：20K21142  2020.7 - 2022.3

    Grant-in-Aid for Challenging Research (Exploratory)

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    Authorship：Coinvestigator(s)  Grant type：Competitive

  8. Si-Ge系スーパーアトム構造のセルフアライン集積による光・電子物性制御

    Grant number：15H05762  2015.4 - 2019.3

    科学研究費補助金  基盤研究(S)

    宮崎誠一

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    Authorship：Coinvestigator(s)  Grant type：Competitive

  9. Switching properties of resistive change memory with tiny limited space for conducting filament formation

    Grant number：15K04602  2015.4 - 2018.3

    TAKASE Kouichi

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    Authorship：Collaborating Investigator(s) (not designated on Grant-in-Aid)  Grant type：Competitive

    We have fabricated a resistive change random access memory (ReRAM) using insulating NiO nanowires, which is expected to indicate good reproducibility of the switching voltage due to spatial limitation of formation of conductive filaments coming from the nanowire width, where Indium metal as the top electrode was attached on the top of the surface of NiO nanowire array and the bottome electrode was the residual aluminum plate. Current-voltage characteristics of In/NiO/Al were investigated using a conventional two-prove method under monopolar operation, where the current compliance limit was set to 1 mA in the SET process. The sample exhibited clear switching behaviors and memory windows with a narrow switching voltage distribution, comparing with the results of ReRAM using thin film insulator. Our results indicate that reduction of the number of conductive filaments is very effective to improve the reproducibility of the switching voltage.

  10. Synthesis of New Group IV Two Dimensional Materials

    Grant number：15H03564  2015.4 - 2018.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    Shiraishi Kenji

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    Authorship：Collaborating Investigator(s) (not designated on Grant-in-Aid) 

    We performed first principles calculations of of silicene and germanene and clarified the atomic and electronic structures. First, we performed electronic structure of silicene and germanene on Al2O3 insulators. As a result, band structures of silicene and germanene keep dirac cone characteristic at K point even after it is adsorbed on Al2O3. However, band structures are slightly modified dependeng of the adsorbed structures of silicene and gemanene.

  11. シリコン系スーパーアトムの超高密度配列と量子物性制御

    Grant number：24246054  2012.4 - 2014.3

    科学研究費補助金  基盤研究(A)

    宮崎誠一

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    Authorship：Coinvestigator(s)  Grant type：Competitive

  12. 精密電子制御したシリコン系ナノ結晶の立体集積構造作成と光電子融合デバイス応用

    2007.4 - 2009.3

    科学研究費補助金 

    　 More details

    Authorship：Principal investigator 

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Industrial property rights 10

  1. 半導体薄膜およびその製造方法

    牧原克典、宮崎誠一、林司

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    Applicant：日新電機株式会社

    Application no：特願2012-041844  Date applied：2012.2

    Country of applicant：Domestic  

  2. 結晶半導体の製造方法およびそれを用いた半導体素子の製造方法

    岡田竜弥、牧原克典、宮崎誠一

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    Applicant：国立大学法人 広島大学

    Application no：特願2009-77922  Date applied：2009.3

    Announcement no：2010-232401 

    Country of applicant：Domestic  

  3. 金属ドットの製造方法およびそれを用いた半導体メモリの製造方法

    牧原克典、宮崎誠一

    　More details

    Applicant：国立大学法人 広島大学

    Application no：特願2008-330536  Date applied：2008.12

    Announcement no：2010-153612 

    Country of applicant：Domestic  

  4. 半導体製造装置、ゲルマニウムドットの製造方法およびそれを用いた半導体メモリの製造方法

    牧原克典、宮崎誠一

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    Applicant：国立大学法人 広島大学

    Application no：特願2008-330524  Date applied：2008.12

    Announcement no：2010-153610 

    Country of applicant：Domestic  

  5. 発光素子およびその製造方法

    牧原克典、宮崎誠一、東清一郎

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    Applicant：国立大学法人 広島大学

    Application no：12/212,406(US)  Date applied：2008.9

    Country of applicant：Foreign country  

  6. 測定装置および測定方法

    牧原克典、宮崎誠一、東清一郎

    　More details

    Applicant：国立大学法人 広島大学

    Application no：PCT/JP2008/002067  Date applied：2008.7

    Country of applicant：Domestic  

  7. バイオセンサーおよびその製造方法

    牧原克典、宮崎誠一、東清一郎、村上秀樹

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    Applicant：国立大学法人 広島大学

    Application no：特願2008-77082  Date applied：2008.3

    Country of applicant：Domestic  

  8. 発光素子およびその製造方法

    牧原克典、宮崎誠一、東清一郎

    　More details

    Applicant：国立大学法人 広島大学

    Application no：特願2008-70602  Date applied：2008.3

    Country of applicant：Domestic  

  9. 半導体素子

    牧原克典、宮崎誠一、東清一郎、村上秀樹

    　More details

    Applicant：国立大学法人 広島大学

    Application no：PCT/JP2007/001360  Date applied：2007.12

    Country of applicant：Domestic  

  10. 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドットの製造方法

    牧原克典、宮崎誠一、東清一郎

    　More details

    Applicant：国立大学法人 広島大学

    Application no：PCT/JP2007/001361  Date applied：2007.12

    Country of applicant：Domestic  

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To the head of Industrial property rights.▲
 

Teaching Experience (Off-campus) 1

  1. 電子光科学ゼミナールIV

    2013 （Osaka University）

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    Level：Postgraduate 

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Social Contribution 8

  1. ISPlasma2014/IC-PLANTS2014実行委員

    2013.4 - 2014.3

  2. 第5回薄膜太陽電池セミナー2013

    2013.4 - 2013.12

  3. ICSI-8/ISCSI-VI実行委員

    2012.7 - 2013.6

  4. IC-PLANTS2013実行委員

    2012.4 - 2013.3

  5. SSDM2012実行委員

    2011.12 - 2012.11

  6. IC-PLANTS2012実行委員

    2011.4 - 2012.3

  7. SSDM2011実行委員

    2010.12 - 2011.11

  8. IC-PLANTS2011実行委員

    2010.4 - 2011.3

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To the head of Social Contribution.▲