Updated on 2024/04/03

写真a

 
HONDA, Yoshio
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Professor
Graduate School
Graduate School of Engineering
Title
Professor
Contact information
メールアドレス

Degree 1

  1. doctor of engineering ( 2003.3   Nagoya University ) 

Research Interests 2

  1. 電子材料

  2. 電子材料

Research Areas 1

  1. Others / Others  / Engineering@Electric and Electronic Engineering@Electronic and Electric Materials Engineering

Current Research Project and SDGs 3

  1. Si基板上半極性GaNの積層欠陥、点欠陥抑制による光学的特性の改善

  2. 加工Si基板を用いた半極性GaN上InGaN結晶に関する研究

  3. Crystal growth of thick nitride-semiconductor on Silicon substrate by HVPE

Research History 22

  1. Aoyama Gakuin University

    2016.4

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    Country:Japan

  2. Aoyama Gakuin University

    2016.4

  3. Nagoya University   Associate professor

    2015.10

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    Country:Japan

  4. Nagoya University   Associate professor

    2015.10

  5. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section   Associate professor

    2015.10

  6. Nagoya University   Associate professor

    2015.10

  7. Nagoya University   Graduate School of Engineering Department of Electrical Engineering and Computer Science

    2014.12

  8. Nagoya University   Department of Electrical Engineering and Computer Science

    2014.12

  9. 名古屋大学大学院   工学研究科電子情報システム専攻   准教授

    2014.4 - 2015.9

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    Country:Japan

  10. Nagoya University   Graduate School of Engineering Department of Electrical Engineering and Computer Science Information Devices   Associate professor

    2014.4 - 2015.9

  11. 名古屋大学大学院   工学研究科電子情報システム専攻   准教授

    2014.4 - 2015.9

  12. Chubu University

    2013.9 - 2017.3

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    Country:Japan

  13. Chubu University

    2013.9 - 2017.3

  14. スウェーデン王国・リンショピン大学   客員研究員

    2007.8 - 2008.3

  15. スウェーデン王国・リンショピン大学   客員研究員

    2007.8 - 2008.3

  16. 名古屋大学大学院   工学研究科電子情報システム専攻   助教授

    2007.4 - 2014.3

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    Country:Japan

  17. Nagoya University   Graduate School of Engineering Department of Electrical Engineering and Computer Science   Assistant Professor

    2007.4 - 2014.3

  18. 名古屋大学大学院   工学研究科電子情報システム専攻   助教

    2007.4 - 2014.3

  19. Nagoya University   Graduate School of Engineering Department of Electrical Engineering and Computer Science   Assistant

    2007.3

  20. 名古屋大学大学院   工学研究科電子情報システム専攻   助教授

    2003.4 - 2007.3

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    Country:Japan

  21. 名古屋大学大学院   工学研究科電子情報システム専攻   助手

    2003.4 - 2007.3

  22. 名古屋大学大学院   工学研究科電子情報システム専攻   助手

    2003.4 - 2007.3

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Education 4

  1. Nagoya University   Graduate School, Division of Engineering   Electrical engineering

    - 2003

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    Country: Japan

  2. Nagoya University   Graduate School, Division of Engineering   Electrical engineering

    - 2003

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    Country: Japan

  3. Nagoya University   Graduate School, Division of Engineering   Electrical engineering

    - 2003

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    Country: Japan

  4. Nagoya University   Faculty of Engineering   Electrical engineering

    - 1998

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    Country: Japan

Professional Memberships 4

  1. The Japan Society of Applied Phisics

  2. 日本結晶成長学会ナノ構造・エピタキシャル成長分科会

  3. 日本結晶成長学会ナノ構造・エピタキシャル成長分科会

  4. The Japan Society of Applied Phisics

Committee Memberships 47

  1. ICNS2023   実行委員会副委員長  

    2020.4   

  2. IWUMD2023   プログラム委員  

    2022.4 - 2023.12   

  3. LEDIA19   プログラム委員長  

    2019.4 - 2020.3   

  4. ICNS14   実行副委員長  

    2019.3 - 2021.10   

  5. APWS2019   展示委員  

    2018.11 - 2019.10   

  6. LEDIA18   庶務委員  

    2018.4 - 2019.3   

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    Committee type:Academic society

  7. ICMOVPE2018   財務委員  

    2017.4 - 2018.12   

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    Committee type:Academic society

  8. ICMOVPE2018   財務委員  

    2017.4 - 2018.12   

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    Committee type:Academic society

  9. ISPLASMA2018   プログラム委員  

    2017.4 - 2018.3   

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    Committee type:Academic society

  10. LEDIA18   プログラム委員  

    2017.4 - 2018.3   

  11. ISPLASMA2018   プログラム委員  

    2017.4 - 2018.3   

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    Committee type:Academic society

  12.   庶務委員  

    2016.8 - 2019.3   

  13. IWN2018   庶務委員  

    2016.8 - 2019.3   

  14.   庶務委員  

    2016.6 - 2017.5   

  15. LEDIA17   庶務委員  

    2016.6 - 2017.5   

  16.   プログラム委員  

    2016.4 - 2017.3   

  17. IWUMD2017   副実行委員長  

    2016.4 - 2017.3   

  18. ISPLASMA2016   プログラム委員  

    2016.4 - 2017.3   

  19. ISPLASMA2015   実行委員  

    2015.4 - 2016.3   

  20. ISPLASMA2015   実行委員  

    2015.4 - 2016.3   

  21. ISGN-6   総務幹事  

    2014.7 - 2016.3   

  22. ISGN-6   総務幹事  

    2014.7 - 2016.3   

  23. LEDIA15   総務委員  

    2014.4 - 2015.3   

  24. LEDIA15   総務委員  

    2014.4 - 2015.3   

  25. 学振162委員会   研究会企画幹事  

    2013.4   

  26. 学振162委員会   研究会企画幹事  

    2013.4 - 2021.3   

  27. ICCGE2016   現地実行委員  

    2013.4 - 2016.3   

  28. ICCGE2016   現地実行委員  

    2013.4 - 2016.3   

  29. ISPLASMA2014   広報委員  

    2013.4 - 2014.3   

  30. LEDIA14   庶務・プログラム・現地委員  

    2013.4 - 2014.3   

  31. ISPLASMA2014   広報委員  

    2013.4 - 2014.3   

  32. LEDIA13   プログラム・現地委員  

    2012.11 - 2013.3   

  33. LEDIA13   プログラム・現地委員  

    2012.11 - 2013.3   

  34. ISPLASMA2013   現地実行委員  

    2012.4 - 2013.3   

  35. ISPLASMA2013   現地実行委員  

    2012.4 - 2013.3   

  36. IWN2012   庶務委員  

    2011.2 - 2012.10   

  37. IWN2012   庶務委員  

    2011.2 - 2012.10   

  38. EMS30-31   会場委員  

    2010.10 - 2012.7   

  39. EMS30-31   会場委員  

    2010.10 - 2012.7   

  40. APWS2011   現地実行委員  

    2010.6 - 2011.6   

  41. APWS2011   現地実行委員  

    2010.6 - 2011.6   

  42. IWBNS-7   現地実行委員  

    2010.4 - 2011.3   

  43. IWBNS-7   現地実行委員  

    2010.4 - 2011.3   

  44. ISGN-2   現地実行委員  

    2007.8 - 2008.8   

  45. ISGN-2   現地実行委員  

    2007.8 - 2008.8   

  46. IWN2006   現地実行委員  

    2005.10 - 2006.10   

  47. IWN2006   現地実行委員  

    2005.10 - 2006.10   

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Awards 2

  1. 日本結晶成長学会ナノ構造・エピタキシャル成長分科会研究奨励賞

    2009.5   日本結晶成長学会  

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    Country:Japan

  2. 日本結晶成長学会ナノ構造・エピタキシャル成長分科会研究奨励賞

    2009.5   日本結晶成長学会  

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    Country:Japan

 

Papers 558

  1. Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping

    Kumabe, T; Yoshikawa, A; Kawasaki, S; Kushimoto, M; Honda, Y; Arai, M; Suda, J; Amano, H

    IEEE TRANSACTIONS ON ELECTRON DEVICES     2024.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TED.2024.3367314

    Web of Science

  2. Sn-doped n-type GaN layer with high electron density of 1020 cm-3 grown by halide vapor phase epitaxy

    Hamasaki, K; Ohnishi, K; Nitta, S; Fujimoto, N; Watanabe, H; Honda, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   Vol. 628   2024.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2023.127529

    Web of Science

  3. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate

    Watanabe, H; Nitta, S; Ando, Y; Ohnishi, K; Honda, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   Vol. 628   2024.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2023.127552

    Web of Science

  4. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing

    Ito, S; Sato, S; Bockowski, M; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Yoshida, K; Minagawa, H; Hagura, N

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Vol. 547   2024.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.nimb.2023.165181

    Web of Science

  5. Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering

    Kobayashi, A; Honda, Y; Maeda, T; Okuda, T; Ueno, K; Fujioka, H

    APPLIED PHYSICS EXPRESS   Vol. 17 ( 1 )   2024.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/ad120b

    Web of Science

  6. Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector

    Nakagawa, H; Hayashi, K; Miyazawa, A; Honda, Y; Amano, H; Aoki, T; Nakano, T

    SENSORS AND MATERIALS   Vol. 36 ( 1 ) page: 169 - 176   2024

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.18494/SAM4647

    Web of Science

  7. 15 GHz GaN Hi-Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W

    Kawasaki, S; Kumabe, T; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H

    IEEE TRANSACTIONS ON ELECTRON DEVICES     2023.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TED.2023.3345822

    Web of Science

  8. Anisotropic hole transport along [0001] and [1120] direction in p-doped (1010) GaN

    Lin, YY; Wang, J; Pristovsek, M; Honda, Y; Amano, H

    JOURNAL OF APPLIED PHYSICS   Vol. 134 ( 23 )   2023.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0177681

    Web of Science

  9. Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN

    Kumabe, T; Kawasaki, S; Watanabe, H; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 123 ( 25 )   2023.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0180062

    Web of Science

  10. Investigation of Electrical Properties of N-Polar AlGaN/AlN Heterostructure Field-Effect Transistors

    Inahara, D; Matsuda, S; Matsumura, W; Okuno, R; Hanasaku, K; Kowaki, T; Miyamoto, M; Yao, YZ; Ishikawa, Y; Tanaka, A; Honda, Y; Nitta, S; Amano, H; Kurai, S; Okada, N; Yamada, Y

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 220 ( 16 )   2023.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.202200871

    Web of Science

  11. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

    Kawasaki, S; Kumabe, T; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H

    IEEE ELECTRON DEVICE LETTERS   Vol. 44 ( 8 ) page: 1328 - 1331   2023.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/LED.2023.3285938

    Web of Science

  12. Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes

    Kwon, W; Kawasaki, S; Watanabe, H; Tanaka, A; Honda, Y; Ikeda, H; Iso, K; Amano, H

    IEEE ELECTRON DEVICE LETTERS   Vol. 44 ( 7 ) page: 1172 - 1175   2023.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/LED.2023.3274306

    Web of Science

  13. Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN

    Kumabe, T; Kawasaki, S; Watanabe, H; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 122 ( 25 )   2023.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0155363

    Web of Science

  14. Stress relaxation of AlGaN on nonpolar m-plane GaN substrate

    Lin, YY; Sena, H; Frentrup, M; Pristovsek, M; Honda, Y; Amano, H

    JOURNAL OF APPLIED PHYSICS   Vol. 133 ( 22 )   2023.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0149838

    Web of Science

  15. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current-voltage characteristic

    Lu, S; Deki, M; Kumabe, T; Wang, J; Ohnishi, K; Watanabe, H; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 122 ( 14 )   2023.4

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    DOI: 10.1063/5.0146080

    Web of Science

  16. Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN-Transition from Dissolution Stage to Growth Stage Conditions

    Schimmel, S; Tomida, D; Ishiguro, T; Honda, Y; Chichibu, SE; Amano, H

    MATERIALS   Vol. 16 ( 5 )   2023.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/ma16052016

    Web of Science

    PubMed

  17. A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes

    Nagata, K; Matsubara, T; Saito, Y; Kataoka, K; Narita, T; Horibuchi, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Takeuchi, T; Amano, H

    CRYSTALS   Vol. 13 ( 3 )   2023.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/cryst13030524

    Web of Science

  18. Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates

    Cai, WT; Wang, J; Park, JH; Furusawa, Y; Cheong, HJ; Nitta, S; Honda, Y; Pristovsek, M; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( 2 )   2023.2

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    DOI: 10.35848/1347-4065/acb74c

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  19. Investigation on Applying an InGaN Photocathode with Negative Electron Affinity for Electric Propulsion

    INOUE Yusuke, NISHITANI Tomohiro, HONDA Anna, SATO Daiki, SHIKANO Haruka, KOIZUMI Atsushi, HONDA Yoshio, ICHIHARA Daisuke, SASOH Akihiro

    TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES   Vol. 66 ( 1 ) page: 10 - 13   2023

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES  

    DOI: 10.2322/tjsass.66.10

    Web of Science

    CiNii Research

  20. Novel Electron Beam Technology using InGaN Photocathode for High-Throughput Scanning Electron Microscope Imaging

    Sato, D; Koizumi, A; Shikano, H; Noda, S; Otsuka, Y; Yasufuku, D; Mori, K; Iijima, H; Nishitani, T; Honda, Y; Amano, H

    METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVII   Vol. 12496   2023

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1117/12.2657032

    Web of Science

  21. Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars

    Sato, SI; Li, S; Greentree, AD; Deki, M; Nishimura, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Gibson, BC; Ohshima, T

    SCIENTIFIC REPORTS   Vol. 12 ( 1 ) page: 21208   2022.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-022-25522-6

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    PubMed

  22. Scanning electron microscope imaging by selective e-beaming using photoelectron beams from semiconductor photocathodes

    Nishitani, T; Arakawa, Y; Noda, S; Koizumi, A; Sato, D; Shikano, H; Iijima, H; Honda, Y; Amano, H

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 40 ( 6 )   2022.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1116/6.0002111

    Web of Science

  23. Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes

    Kushimoto, M; Zhang, ZY; Yoshikawa, A; Aoto, K; Honda, Y; Sasaoka, C; Schowalter, LJ; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 121 ( 22 )   2022.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0124512

    Web of Science

  24. High In content nitride sub-micrometer platelet arrays for long wavelength optical applications

    Cai, WT; Furusawa, Y; Wang, J; Park, JH; Liao, YQ; Cheong, HJ; Nitta, S; Honda, Y; Pristovsek, M; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 121 ( 21 )   2022.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0120723

    Web of Science

  25. Substitutional diffusion of Mg into GaN from GaN/Mg mixture

    Itoh, Y; Lu, S; Watanabe, H; Deki, M; Nitta, S; Honda, Y; Tanaka, A; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 11 )   2022.11

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    DOI: 10.35848/1882-0786/ac9c83

    Web of Science

  26. The photoemission characteristics of a NEA InGaN photocathode by simultaneously supplying Cs and O2

    Kashima, M; Itokawa, Y; Kanai, T; Sato, D; Koizumi, A; Iijima, H; Nishitani, T; Honda, Y; Amano, H; Meguro, T

    APPLIED SURFACE SCIENCE   Vol. 599   2022.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.apsusc.2022.153882

    Web of Science

  27. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy

    Ohnishi, K; Fujimoto, N; Nitta, S; Watanabe, H; Lu, S; Deki, M; Honda, Y; Amano, H

    JOURNAL OF APPLIED PHYSICS   Vol. 132 ( 14 )   2022.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0122292

    Web of Science

  28. High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN

    Schimmel, S; Salamon, M; Tomida, D; Neumeier, S; Ishiguro, T; Honda, Y; Chichibu, SF; Amano, H

    MATERIALS   Vol. 15 ( 17 )   2022.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/ma15176165

    Web of Science

    PubMed

  29. Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal-organic vapor phase epitaxy

    Hu, N; Avit, G; Pristovsek, M; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 121 ( 8 )   2022.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0088908

    Web of Science

  30. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates

    Ohnishi, K; Fujimoto, N; Nitta, S; Watanabe, H; Honda, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   Vol. 592   2022.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2022.126749

    Web of Science

  31. Weak metastability of Al<i> <sub>x</sub> </i>Ga<sub>1-<i>x</i> </sub>N (<i>x</i>=13/24, 15/24, 17/24) shown by analyzing AlGaN grown on AlN with dense macrosteps

    Hirano, A; Nagasawa, Y; Ippommatsu, M; Sako, H; Hashimoto, A; Sugie, R; Honda, Y; Amano, H; Kojima, K; Chichibu, SF

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 7 )   2022.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/ac79a1

    Web of Science

  32. Space-Charge Profiles and Carrier Transport Properties in Dopant-Free GaN-Based p-n Junction Formed by Distributed Polarization Doping

    Kumabe, T; Kawasaki, S; Watanabe, H; Nitta, S; Honda, Y; Amano, H

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 16 ( 7 )   2022.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssr.202200127

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  33. Dual-peak electroluminescence spectra generated from Al <i><sub>n</sub></i> <sub>/12</sub>Ga<sub>1-<i>n</i>/12</sub>N (<i>n</i>=2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

    Nagasawa, Y; Kojima, K; Hirano, A; Ippommatsu, M; Honda, Y; Amano, H; Chichibu, SF

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 55 ( 25 )   2022.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6463/ac5d03

    Web of Science

  34. Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors.

    Tanaka A, Sugiura R, Kawaguchi D, Wani Y, Watanabe H, Sena H, Ando Y, Honda Y, Igasaki Y, Wakejima A, Ando Y, Amano H

    Scientific reports   Vol. 12 ( 1 ) page: 8175   2022.5

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    DOI: 10.1038/s41598-022-12628-0

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  35. Laser slice thinning of GaN-on-GaN high electron mobility transistors

    Tanaka, A; Sugiura, R; Kawaguchi, D; Wani, Y; Watanabe, H; Sena, H; Ando, Y; Honda, Y; Igasaki, Y; Wakejima, A; Ando, Y; Amano, H

    SCIENTIFIC REPORTS   Vol. 12 ( 1 ) page: 7363   2022.5

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    DOI: 10.1038/s41598-022-10610-4

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  36. The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer

    Park, JH; Cai, W; Cheong, H; Ushida, Y; Lee, DH; Ando, Y; Furusawa, Y; Honda, Y; Lee, DS; Seong, TY; Amano, H

    JOURNAL OF APPLIED PHYSICS   Vol. 131 ( 15 )   2022.4

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    DOI: 10.1063/5.0085384

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  37. "Regrowth-free" fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration

    Kumabe, T; Watanabe, H; Ando, Y; Tanaka, A; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 4 )   2022.4

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    DOI: 10.35848/1882-0786/ac6197

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  38. Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED

    Matsubara, T; Nagatat, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 4 )   2022.4

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    DOI: 10.35848/1882-0786/ac5acf

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  39. Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode

    Nagata, K; Anada, S; Miwa, H; Matsui, S; Boyama, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 4 )   2022.4

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    DOI: 10.35848/1882-0786/ac60c7

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  40. Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

    Liao, YQ; Chen, T; Wang, J; Cai, WT; Ando, YT; Yang, X; Watanabe, H; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 120 ( 12 )   2022.3

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    DOI: 10.1063/5.0083194

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  41. Visualization of depletion layer in AlGaN homojunction p-n junction

    Nagata Kengo, Anada Satoshi, Saito Yoshiki, Kushimoto Maki, Honda Yoshio, Takeuchi Tetsuya, Yamamoto Kazuo, Hirayama Tsukasa, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 3 )   2022.3

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    DOI: 10.35848/1882-0786/ac53e2

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  42. Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN

    Itoh Yuta, Watanabe Hirotaka, Ando Yuto, Kano Emi, Deki Manato, Nitta Shugo, Honda Yoshio, Tanaka Atsushi, Ikarashi Nobuyuki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 2 )   2022.2

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    DOI: 10.35848/1882-0786/ac481b

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  43. Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate

    Kushimoto Maki, Zhang Ziyi, Honda Yoshio, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( 1 )   2022.1

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    DOI: 10.35848/1347-4065/ac3a1d

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  44. Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium

    Wang Jia, Lu Shun, Cai Wentao, Kumabe Takeru, Ando Yuto, Liao Yaqiang, Honda Yoshio, Xie Ya-Hong, Amano Hiroshi

    IEEE ELECTRON DEVICE LETTERS   Vol. 43 ( 1 ) page: 150 - 153   2022.1

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    DOI: 10.1109/LED.2021.3131057

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  45. An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources

    Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B

    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 10   page: 797 - 807   2022

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    DOI: 10.1109/JEDS.2022.3208028

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  46. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg

    Lu Shun, Deki Manato, Wang Jia, Ohnishi Kazuki, Ando Yuto, Kumabe Takeru, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 119 ( 24 )   2021.12

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    DOI: 10.1063/5.0076764

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  47. Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells

    Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Chichibu Shigefusa F.

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 54 ( 48 )   2021.12

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    DOI: 10.1088/1361-6463/ac2065

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  48. Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions

    Jadhav Aakash, Ozawa Takashi, Baratov Ali, Asubar Joel T., Kuzuhara Masaaki, Wakejima Akio, Yamashita Shunpei, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Roy Sourajeet, Sarkar Biplab

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 68 ( 12 ) page: 6059 - 6064   2021.12

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    DOI: 10.1109/TED.2021.3119528

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  49. Multiple electron beam generation from InGaN photocathode

    Sato Daiki, Shikano Haruka, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 39 ( 6 )   2021.12

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    DOI: 10.1116/6.0001272

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  50. Cyclotron production of <sup>225</sup>Ac from an electroplated <sup>226</sup>Ra target. Reviewed

    Nagatsu K, Suzuki H, Fukada M, Ito T, Ichinose J, Honda Y, Minegishi K, Higashi T, Zhang MR

    European journal of nuclear medicine and molecular imaging   Vol. 49 ( 1 ) page: 279 - 289   2021.12

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    DOI: 10.1007/s00259-021-05460-7

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  51. Vertical GaN p(+)-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy (vol 119, 152102, 2021)

    Ohnishi Kazuki, Kawasaki Seiya, Fujimoto Naoki, Nitta Shugo, Watanabe Hirotaka, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 119 ( 20 )   2021.11

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    DOI: 10.1063/5.0077364

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  52. Vertical GaN p(+)-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy

    Ohnishi Kazuki, Kawasaki Seiya, Fujimoto Naoki, Nitta Shugo, Watanabe Hirotaka, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 119 ( 15 )   2021.10

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    DOI: 10.1063/5.0066139

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  53. Effective neutron detection using vertical-type BGaN diodes

    Nakano Takayuki, Mochizuki Ken, Arikawa Takuya, Nakagawa Hisaya, Usami Shigeyoshi, Honda Yoshio, Amano Hiroshi, Vogt Adrian, Schuett Sebastian, Fiederle Michael, Kojima Kazunobu, Chichibu Shigefusa F., Inoue Yoku, Aoki Toru

    JOURNAL OF APPLIED PHYSICS   Vol. 130 ( 12 )   2021.9

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    DOI: 10.1063/5.0051053

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  54. Smart-cut-like laser slicing of GaN substrate using its own nitrogen

    Tanaka Atsushi, Sugiura Ryuji, Kawaguchi Daisuke, Yui Toshiki, Wani Yotaro, Aratani Tomomi, Watanabe Hirotaka, Sena Hadi, Honda Yoshio, Igasaki Yasunori, Amano Hiroshi

    SCIENTIFIC REPORTS   Vol. 11 ( 1 ) page: 17949   2021.9

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    DOI: 10.1038/s41598-021-97159-w

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  55. Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing

    Sena Hadi, Tanaka Atsushi, Wani Yotaro, Aratani Tomomi, Yui Toshiki, Kawaguchi Daisuke, Sugiura Ryuji, Honda Yoshio, Igasaki Yasunori, Amano Hiroshi

    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING   Vol. 127 ( 9 )   2021.9

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    DOI: 10.1007/s00339-021-04808-y

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  56. Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations

    Nagata Kengo, Makino Hiroaki, Miwa Hiroshi, Matsui Shinichi, Boyama Shinya, Saito Yoshiki, Kushimoto Maki, Honda Yoshio, Takeuchi Tetsuya, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

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    DOI: 10.35848/1882-0786/ac0fb6

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  57. Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility

    Ando Yuto, Deki Manato, Watanabe Hirotaka, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Yamada Hisashi, Shimizu Mitsuaki, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

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    DOI: 10.35848/1882-0786/ac0ffa

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  58. Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers

    Matsukura Yusuke, Inazu Tetsuhiko, Pernot Cyril, Shibata Naoki, Kushimoto Maki, Deki Manato, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

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    DOI: 10.35848/1882-0786/ac154c

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  59. Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy

    Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Watanabe Hirotaka, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 566   2021.7

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    DOI: 10.1016/j.jcrysgro.2021.126173

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  60. Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

    Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Cai Wentao, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 7 )   2021.7

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    DOI: 10.35848/1347-4065/ac06b5

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  61. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

    Kumabe Takeru, Ando Yuto, Watanabe Hirotaka, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

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    DOI: 10.35848/1347-4065/abd538

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  62. Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate

    Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Honda Yoshio, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 5 )   2021.5

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    DOI: 10.35848/1882-0786/abf443

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  63. Discrete AlN mole fraction of n/12 (n=4-8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

    Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Kojima Kazunobu, Chichibu Shigefusa F.

    JOURNAL OF APPLIED PHYSICS   Vol. 129 ( 16 )   2021.4

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    DOI: 10.1063/5.0042036

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  64. Experimental demonstration of GaN IMPATT diode at X-band

    Kawasaki Seiya, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Arai Manabu, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 4 )   2021.4

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    DOI: 10.35848/1882-0786/abe3dc

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  65. Numerical Simulation of Ammonothermal Crystal Growth of GaN-Current State, Challenges, and Prospects

    Schimmel Saskia, Tomida Daisuke, Ishiguro Tohru, Honda Yoshio, Chichibu Shigefusa, Amano Hiroshi

    CRYSTALS   Vol. 11 ( 4 )   2021.4

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    DOI: 10.3390/cryst11040356

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  66. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

    Yamada Takehiro, Ando Yuto, Watanabe Hirotaka, Furusawa Yuta, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Suda Jun, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 3 )   2021.3

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    DOI: 10.35848/1882-0786/abe657

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  67. Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth-A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution

    Schimmel Saskia, Tomida Daisuke, Saito Makoto, Bao Quanxi, Ishiguro Toru, Honda Yoshio, Chichibu Shigefusa, Amano Hiroshi

    CRYSTALS   Vol. 11 ( 3 )   2021.3

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    DOI: 10.3390/cryst11030254

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  68. Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication

    Yasuda Hidehiro, Nishitani Tomohiro, Ichikawa Shuhei, Hatanaka Shuhei, Honda Yoshio, Amano Hiroshi

    QUANTUM BEAM SCIENCE   Vol. 5 ( 1 )   2021.3

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    DOI: 10.3390/qubs5010005

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  69. The difference of InGaN photocathode with photoemission characteristics

    Kashima Masahiro, Sato Daiki, Koizumi Atsushi, Iijima Hokuto, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi, Meguro Takashi

    JSAP Annual Meetings Extended Abstracts   Vol. 2021.1 ( 0 ) page: 1347 - 1347   2021.2

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    DOI: 10.11470/jsapmeeting.2021.1.0_1347

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  70. Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)

    Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

    OPTICAL MATERIALS EXPRESS   Vol. 11 ( 2 ) page: 524 - 524   2021.2

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    DOI: 10.1364/OME.420328

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  71. Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs

    Jadhav Aakash, Ozawa Takashi, Baratov Ali, Asubar Joel T., Kuzuhara Masaaki, Wakejima Akio, Yamashita Shunpei, Deki Manato, Honda Yoshio, Roy Sourajeet, Amano Hiroshi, Sarkar Biplab

    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 9   page: 570 - 581   2021

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    DOI: 10.1109/JEDS.2021.3081463

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  72. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 24 )   2020.12

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    DOI: 10.1063/5.0028516

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  73. Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps

    Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Kojima Kazunobu, Chichibu Shigefusa F.

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 12 )   2020.12

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    DOI: 10.35848/1882-0786/abcb49

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  74. Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate

    Yang Xu, Pristovsek Markus, Nitta Shugo, Liu Yuhuai, Honda Yoshio, Koide Yasuo, Kawarada Hiroshi, Amano Hiroshi

    ACS APPLIED MATERIALS & INTERFACES   Vol. 12 ( 41 ) page: 46466 - 46475   2020.10

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    DOI: 10.1021/acsami.0c11883

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  75. Optical properties of neodymium ions in nanoscale regions of gallium nitride

    Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

    OPTICAL MATERIALS EXPRESS   Vol. 10 ( 10 ) page: 2614 - 2623   2020.10

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    DOI: 10.1364/OME.401765

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  76. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

    Sato Shin-ichiro, Deki Manato, Nishimura Tomoaki, Okada Hiroshi, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Ohshima Takeshi

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Vol. 479   page: 7 - 12   2020.9

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    DOI: 10.1016/j.nimb.2020.06.007

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  77. Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 10 )   2020.9

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    DOI: 10.1063/5.0010774

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  78. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

    Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 8 )   2020.8

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    DOI: 10.35848/1347-4065/aba0d5

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  79. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures International journal

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 7 ) page: .   2020.7

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    DOI: 10.35848/1882-0786/ab93a0

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  80. Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO International journal

    Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 6 ) page: .   2020.6

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    DOI: 10.35848/1882-0786/ab9166

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  81. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

    Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 539   page: .   2020.6

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  82. Impact of high-temperature implantation of Mg ions into GaN International journal

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 5 ) page: .   2020.5

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  83. Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

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    DOI: 10.1002/pssb.201900554

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  84. Simultaneous Growth of Multi-Color Micro LEDs Based on Super Thin Micro-Platelets with Various Surface Areas

    Cai Wentao, Kushimoto Maki, Manato Deki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JSAP Annual Meetings Extended Abstracts   Vol. 2020.1 ( 0 ) page: 3111 - 3111   2020.2

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    DOI: 10.11470/jsapmeeting.2020.1.0_3111

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  85. Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

    Yamamoto K, Nakano K, Tanaka A, Honda Y, Ando Y, Ogura M, Matsumoto M, Anada S, Ishikawa Y, Amano H, Hirayama T

    Microscopy (Oxford, England)   Vol. 69 ( 1 ) page: 1 - 10   2020.2

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    DOI: 10.1093/jmicro/dfz037

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  86. Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

    Sato Daiki, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 38 ( 1 )   2020.1

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    DOI: 10.1116/1.5120417

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  87. Characterization of AlGaN multiple-quantum-wells grown on <i>c</i>-plane AlN/sapphire templates with macro-steps

    Kojima Kazunobu, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    Journal of the Japanese Association for Crystal Growth   Vol. 47 ( 3 ) page: n/a   2020

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    <p>  The microscopic structural and optical characteristics of AlGaN light-emitting diodes (LEDs) fabricated on the AlN templates with dense macrosteps are shown to clarify the origin of their high internal quantum efficiency of radiation (IQE). The cross-sectional transmission electron microscopy observations under the high-angle annular dark field scanning mode and microscopic energy dispersive X-ray spectroscopy revealed that the AlGaN cladding layer under the AlGaN quantum well (QW) layer had a microscopic compositional modulation, which originates from the macrosteps at the AlN template surface. Moreover, Ga-rich portions in the cladding layer behaved as current micropaths, and the micropaths are connected with the carrier localization structure formed in QWs. The in-plane cathodoluminescence (CL) spectroscopy showed a significant inhomogeneity of the CL characteristics. The gentle slopes at the sample surface showed brighter emissions with a lower peak photon energy, confirming the carrier localization. This carrier localization structure in the QWs combined with the current micropaths in the cladding layer can increase the IQE as well as external quantum efficiency of the AlGaN LEDs.</p>

    DOI: 10.19009/jjacg.47-3-04

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  88. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

    Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page: 349 - 352   2020

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    DOI: 10.1109/ispsd46842.2020.9170101

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  89. Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

    Nagasawa Yosuke, Sugie Ryuichi, Kojima Kazunobu, Hirano Akira, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    JOURNAL OF APPLIED PHYSICS   Vol. 126 ( 21 )   2019.12

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    DOI: 10.1063/1.5125623

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  90. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current International journal

    Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 114 ( 23 )   2019.6

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    DOI: 10.1063/1.5097767

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  91. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates International journal

    Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab1250

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  92. Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors International journal

    Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab06b9

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  93. Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability International journal

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab106c

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  94. Electronic structure analysis at threading dislocation and at m-plane surface of nanopipes in GaN thin films

    Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Usami Shigeyoshi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    JSAP Annual Meetings Extended Abstracts   Vol. 2019.1 ( 0 ) page: 3122 - 3122   2019.2

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    DOI: 10.11470/jsapmeeting.2019.1.0_3122

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  95. Electronic structure analysis of core structures of threading dislocations in GaN

    Nakano, T; Chokawa, K; Araidai, M; Shiraishi, K; Oshiyama, A; Kusaba, A; Kangawa, Y; Tanaka, A; Honda, Y; Amano, H

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)     page: .   2019

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    DOI: 10.1109/iciprm.2019.8819270

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  96. Analysis of Cesium Layer on InGaN by Temperature Programmed Desorption Method

    Kashima Masahiro, Daiki Sato, Atsushi Koizumi, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano, Hokuto Iijima, Takashi Meguro

    JSAP Annual Meetings Extended Abstracts   Vol. 2018.1 ( 0 ) page: 1670 - 1670   2018.3

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    DOI: 10.11470/jsapmeeting.2018.1.0_1670

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  97. Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes

    Yates, L; Pavlidis, G; Graham, S; Usami, S; Nagamatsu, K; Honda, Y; Amano, H

    PROCEEDINGS OF THE 17TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2018)     page: 831 - 837   2018

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  98. Effect of thermal treatment on the quantu efficiency of NEA-InGaN photocatode

    Kashima Masahiro, Iijima Hokuto, Nishitani Tomohiro, Sato Daiki, Honda Yoshio, Amano Hiroshi, Meguro Takashi

    JSAP Annual Meetings Extended Abstracts   Vol. 2017.1 ( 0 ) page: 1554 - 1554   2017.3

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    DOI: 10.11470/jsapmeeting.2017.1.0_1554

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  99. A Study on the Photo-resistance and the Decomposition Mechanism of Perfluoro Resins Applied to Encapsulating Deep Ultra Violet LEDs

    Nagasawa Yosuke, Yamada Kiho, Nagai Shouko, Hirano Akira, Ipponmatsu Masamichi, Aosaki Ko, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

    JSAP Annual Meetings Extended Abstracts   Vol. 2017.1 ( 0 ) page: 1136 - 1136   2017.3

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    DOI: 10.11470/jsapmeeting.2017.1.0_1136

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  100. Fabrication and Electric Characteristics Evaluation of GaN-MIS Capacitor with BN

    Matsushita Junya, Nagamatsu Kentarou, Yang Xu, Tanaka Atushi, Kushimto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JSAP Annual Meetings Extended Abstracts   Vol. 2016.2 ( 0 ) page: 2888 - 2888   2016.9

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    DOI: 10.11470/jsapmeeting.2016.2.0_2888

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  101. Electroluminescence Pattern Investigation of the PIN Diode on GaN Substrate

    Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JSAP Annual Meetings Extended Abstracts   Vol. 2016.2 ( 0 ) page: 2867 - 2867   2016.9

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    DOI: 10.11470/jsapmeeting.2016.2.0_2867

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  102. Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering Reviewed

    Honda Yoshio

    Japanese Journal of Applied Physics   Vol. 55   2016

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  103. Growth of semipolar (1-101) high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001) Reviewed

    Honda Yoshio

    Japanese Journal of Applied Physics   Vol. 55   2016

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  104. HVPE and VLS-HVPE synthesis of vertical and horizontal GaN nanowires

    Lekhal Kaddour, Mitsunari Tadashi, Honda Yoshio, Amano Hiroshi

    JSAP Annual Meetings Extended Abstracts   Vol. 2014.2 ( 0 ) page: 1745 - 1745   2014.9

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    DOI: 10.11470/jsapmeeting.2014.2.0_1745

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  105. Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates

    Son Ji-Su, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Baik Kwang Hyeon, Seo Yong Gon, Hwang Sung-Min

    THIN SOLID FILMS   Vol. 546   page: 108 - 113   2013.11

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    DOI: 10.1016/j.tsf.2013.02.048

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  106. Effects of exciton localization on internal quantum efficiency of InGaN nanowires

    Murotani Hideaki, Yamada Yoichi, Tabata Takuya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JOURNAL OF APPLIED PHYSICS   Vol. 114 ( 15 )   2013.10

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    DOI: 10.1063/1.4825124

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  107. Fabrication of InGaN/GaN Multiple Quantum Wells on (1(1)over-bar01) GaN

    Tanikawa Tomoyuki, Sano Tomotaka, Kushimoto Maki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JC05

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  108. High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate

    Sano Tomotaka, Doi Tomohiro, Inada Shunko Albano, Sugiyama Tomohiko, Honda Yoshio, Amano Hiroshi, Yoshino Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JK09

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  109. Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer

    Yamada Takaya, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JB16

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  110. GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy

    Nakagawa Shinta, Tabata Takuya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JE07

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  111. Stacking Faults and Luminescence Property of InGaN Nanowires

    Tabata Takuya, Paek Jihyun, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JE06

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  112. Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer

    Ohata Toshiya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JB11

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  113. Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy

    Doi Tomohiro, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JB14

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  114. Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire

    Son Ji-Su, Miao Cao, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Seo Yong Gon, Hwang Sung-Min, Baik Kwang Hyeon

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JC04

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  115. Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern

    Okuno Koji, Oshio Takahide, Shibata Naoki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JB09

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  116. Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires

    Murotani Hideaki, Andoh Hiroya, Tsukamoto Takehiko, Sugiura Toko, Yamada Yoichi, Tabata Takuya, Honda Yoshio, Yamaguchi Masatoshi, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JE10

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  117. I-1-2 Epitaxial growth of Ill-nitride by molecular beam epitaxy using high density radical source

    KAWAI Yohjiro, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, KONDO Hiroki, HIRAMATSU Mineo, KANO Hiroyuki, YAMAKAWA Kouji, DEN Shouji, Hori Masaru

    The Proceedings of the Conference on Information, Intelligence and Precision Equipment : IIP   Vol. 2013 ( 0 ) page: 5 - 7   2013

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    Although plasma-assisted molecular beam epitaxy(PA-MBE) is a promising technique for GaN growth,the growth rate obtained by this technique is lower than that obtained by metal organic vapor phase epitaxy(MOVPE).In order to improve the growth rate of the technique,high density radical source(HDRS) was developed.By vacuum ultraviolet absorption spectroscopy(VUVAS) measurement,two orders of magnitude higher radical density was confirmed in a comparison of the HDRS and a conventional radical source(CRS).While faster growth rate of 1.4μm/h in GaN homoepitaxy was achieved,better crystalline quality of InxGa_<(1-x)>N(x=0.03〜0.16) epilayers with approximately 1.4μm thickness were also achieved by introducing the HDRS in PA-MBE.

    DOI: 10.1299/jsmeiip.2013.5

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  118. Polarization properties in InGaN/GaN multiple quantum well on semipolar(1-101)GaN/Si

    KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

    IEICE technical report. Component parts and materials   Vol. 112 ( 33 ) page: 15 - 18   2012.5

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    We grew high-quality semipolar (1-101) GaN stripes on a Si substrate by selective area growth and regrew InGaN/GaN MQW on these stripes with MOVPE. The PL peak wavelength at 300 K and InGaN well thickness for the obtained samples were 435-590 nm and 2-9 nm, respectively. In PL measurements from the surface, we found that a shorter wavelength and thinner well sample have PL polarization perpendicular to the c axis. On the other hand, as the PL wavelength is longer and/or the well is thicker, the PL polarization shifts from perpendicular to parallel. In the PL measurement from the (11 -22) edge surface of the sample with shorter wavelength, we observed the narrowing of PL spectrum. In addition, the parallel component of PL polarization increased with increase in well thickness. Therefore, we can control the direction of polarization by managing well thickness and indium composition and apply to make a LD structure.

    CiNii Research

  119. Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate

    Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Sawaki Nobuhiko

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 249 ( 3 ) page: 468 - 471   2012.3

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    DOI: 10.1002/pssb.201100445

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  120. Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers

    Hashimoto Shin, Akita Katsushi, Yamamoto Yoshiyuki, Ueno Masaki, Nakamura Takao, Takeda Kenichiro, Iwaya Motoaki, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 209 ( 3 ) page: 501 - 504   2012.3

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    DOI: 10.1002/pssa.201100379

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  121. Impurity incorporation in semipolar (1-1 0 1) GaN grown on an Si substrate

    Sawaki Nobuhiko, Hagiwara Kiyotaka, Hikosaka Toshiki, Honda Yoshio

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 27 ( 2 )   2012.2

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    DOI: 10.1088/0268-1242/27/2/024006

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  122. Crystal Growth of Semipolar GaN on Si Substrate(<Special Issue>Breakthrough in Nitride Crystal Growth for Next Generation Devices)

    Honda Yoshio

    Journal of the Japanese Association for Crystal Growth   Vol. 38 ( 4 ) page: 241 - 248   2012

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    (1-101) GaN and (11-22) GaN was grown by MOVPE on etched Si substrate. A characteristic of optical, electrical and impurity was evaluated on each face GaN. We also reported an Indium incorporation and a process of dislocation propagation on the (1-101) GaN in this paper.

    DOI: 10.19009/jjacg.38.4_241

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  123. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

    Inazu Tetsuhiko, Fukahori Shinya, Pernot Cyril, Kim Myung Hee, Fujita Takehiko, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Yamaguchi Masahito, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 12 )   2011.12

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    DOI: 10.1143/JJAP.50.122101

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  124. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

    Kim Myunghee, Fujita Takehiko, Fukahori Shinya, Inazu Tetsuhiko, Pernot Cyril, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Yamaguchi Masahito, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

    APPLIED PHYSICS EXPRESS   Vol. 4 ( 9 )   2011.9

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    DOI: 10.1143/APEX.4.092102

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  125. Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes

    Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 208 ( 5 ) page: 1175 - 1178   2011.5

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    DOI: 10.1002/pssa.201000907

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  126. Optical properties of (1 (1)over-bar 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates

    Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, Li Zhen-Yu, Chen Yi-Chen, Ling Shih-Chun, Kuo Hao-Chung, Lu Tien-Chang, Wang Shing-Chung, Liao Wei-Tsai, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF CRYSTAL GROWTH   Vol. 318 ( 1 ) page: 500 - 504   2011.3

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    DOI: 10.1016/j.jcrysgro.2010.10.054

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  127. Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates (vol 4, 012105, 2011)

    Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, Li Zhen-Yu, Chang Wei-Ting, Hsu Hung-Wen, Kuo Hao-Chung, Lu Tien-Chang, Wang Shing-Chung, Liao Wei-Tsai, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    APPLIED PHYSICS EXPRESS   Vol. 4 ( 3 )   2011.3

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    DOI: 10.1143/APEX.4.039201

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  128. Drastic Reduction of Dislocation Density in Semipolar (11(2)over-bar2) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy

    Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Sawaki Nobuhiko

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 1 )   2011.1

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    DOI: 10.1143/JJAP.50.01AD04

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  129. Semi-polar GaN LEDs on Si substrate

    Sawaki Nobuhiko, Honda Yoshio

    SCIENCE CHINA-TECHNOLOGICAL SCIENCES   Vol. 54 ( 1 ) page: 38 - 41   2011.1

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    DOI: 10.1007/s11431-010-4182-2

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  130. Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

    Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, Li Zhen-Yu, Chang Wei-Ting, Hsu Hung-Wen, Kuo Hao-Chung, Lu Tien-Chang, Wang Shing-Chung, Liao Wei-Tsai, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    APPLIED PHYSICS EXPRESS   Vol. 4 ( 1 )   2011.1

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    DOI: 10.1143/APEX.4.012105

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  131. Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate

    Sugiura Toko, Kim Eun-Hee, Honda Yoshio, Takagi Hiroyuki, Tsukamoto Takehiko, Andoh Hiroya, Yamaguchi Masahito, Sawaki Nobuhiko

    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS   Vol. 1399   2011

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    DOI: 10.1063/1.3666474

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  132. Achieving high-growth-rate in GaN homoepitaxy using high-density nitrogen radical source Reviewed

    Kawai Yohjiro, Chen Shang, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Kondo Hiroki, Hiramatsu Mineo, Kano Hiroyuki, Yamakawa Koji, Den Shoji, Hori Masaru

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

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    DOI: 10.1002/pssc.201000969

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  133. Raman spectroscopic study of residual strain and stress in GaN layer grown on Si substrates

    Touko SUGIURA, Yoshio HONDA, Akihiro OKAMOTO, Hiroyuki TAKAGI, Takehiko TSUKAMOTO, Hiroya ANDOH

    Journal of National Institute of Technology, Toyota College   Vol. 42 ( 0 ) page: 19 - 22   2010

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    We have studied the residual strain and stress in semi-polar (1-101)GaN and conventional (0001)GaN grown on Si by means of Raman spectroscopy. By adopting the stress coefficients reported in the references, the residual strain of samples were deduced from the frequency shifts of the phonon modes in Raman spectra. As the results, it was found that the strain tensor of (1-101) GaN/Si was smaller than that of the (0001)GaN/Si in good agreement with the results obtained from the X-ray diffraction measurements.

    DOI: 10.20692/toyotakosenkiyo.kj00005889042

    CiNii Research

  134. Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates

    Yang Min, Ahn Hyung Soo, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY   Vol. 54 ( 6 ) page: 2363 - 2366   2009.6

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    DOI: 10.3938/jkps.54.2363

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  135. Growth and properties of semi-polar GaN on a patterned silicon substrate

    Sawaki Nobuhiko, Hikosaka Toshiki, Koide Norikatsu, Tanaka Shigeyasu, Honda Yoshio, Yamaguchi Masahito

    JOURNAL OF CRYSTAL GROWTH   Vol. 311 ( 10 ) page: 2867 - 2874   2009.5

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    DOI: 10.1016/j.jcrysgro.2009.01.032

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  136. Maskless selective growth of semi-polar (11(2)over-bar2) GaN on Si (311) substrate by metal organic vapor phase epitaxy

    Yang Min, Ahn Hyung Soo, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF CRYSTAL GROWTH   Vol. 311 ( 10 ) page: 2914 - 2918   2009.5

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    DOI: 10.1016/j.jcrysgro.2009.01.064

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  137. Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures

    Han Xiuxun, Honda Yoshio, Narita Tetsuo, Yamaguchi Masahito, Sawaki Nobuhiko, Tanaka Tooru, Guo Qixin, Nishio Mitsushiro

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 42 ( 4 )   2009.2

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    DOI: 10.1088/0022-3727/42/4/045112

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  138. Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy

    TANAKA Shigeyasu, AOYAMA Kentaro, ICHIHASHI Mikio, ARAI Shigeo, HONDA Yoshio, SAWAKI Nobuhiko

    Journal of electron microscopy   Vol. 56 ( 4 ) page: 141 - 144   2007.8

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  139. Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy

    Tanaka Shigeyasu, Aoyama Kentaro, Ichihashi Mikio, Arai Shigeo, Honda Yoshio, Sawaki Nobuhiko

    JOURNAL OF ELECTRON MICROSCOPY   Vol. 56 ( 4 ) page: 141 - 144   2007.8

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    DOI: 10.1093/jmicro/dfm016

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    PubMed

  140. Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure

    TANAKA Shigeyasu, NAITO Akiyuki, HONDA Yoshio, SAWAKI Nobuhiko, ICHIHASHI Mikio

    Journal of electron microscopy   Vol. 56 ( 2 ) page: 37 - 42   2007.4

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  141. Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure

    Tanaka Shigeyasu, Naito Akiyuki, Honda Yoshio, Sawaki Nobuhiko, Ichihashi Mikio

    JOURNAL OF ELECTRON MICROSCOPY   Vol. 56 ( 2 ) page: 37 - 42   2007.4

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    DOI: 10.1093/jmicro/dfm013

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  142. Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

    Han Xiuxun, Honda Yoshio, Narita Tetsuo, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF PHYSICS-CONDENSED MATTER   Vol. 19 ( 4 )   2007.1

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    DOI: 10.1088/0953-8984/19/4/046204

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  143. Mg doping in (1(1)over-bar01)GaN grown on a 7 degrees off-axis (001)Si substrate by selective MOVPE

    Hikosaka Toshiki, Koide Norikatsu, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF CRYSTAL GROWTH   Vol. 298   page: 207 - 210   2007.1

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    DOI: 10.1016/j.jcrysgro.2006.10.229

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  144. Carbon incorporation on (1101) facet of AlGaN in metal organic vapor phase epitaxy

    Koide Norikatsu, Hikosaka Toshiki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 45 ( 10A ) page: 7655 - 7660   2006.10

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    DOI: 10.1143/JJAP.45.7655

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  145. The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE

    Narita Tetsuo, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 243 ( 7 ) page: 1665 - 1668   2006.6

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    DOI: 10.1002/pssb.200565115

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  146. Series resistance in n-GaN/AIN/n-Si heterojunction structure

    Kondo Hiroyuki, Koide Norikatsu, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 45 ( 5A ) page: 4015 - 4017   2006.5

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    DOI: 10.1143/JJAP.45.4015

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  147. The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

    HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. SDM   Vol. 105 ( 94 ) page: 69 - 74   2005.5

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

    CiNii Research

  148. [Congenital middle ear cholesteatoma: experience in 48 cases]. Reviewed

    Kojima H, Miyazaki H, Tanaka Y, Shiwa M, Honda Y, Moriyama H

    Nihon Jibiinkoka Gakkai kaiho   Vol. 106 ( 9 ) page: 856 - 65   2003.9

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    DOI: 10.3950/jibiinkoka.106.856

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  149. Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy.

    Kato Tomonobu, Honda Yoshio, Kawaguchi Yasutoshi, Yamaguchi Masahito, Sawaki Nobuhiko

    Japanese Journal of Applied Physics   Vol. 40 ( 3B ) page: 1896 - 1898   2001

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    A GaN/AlGaN double heterostructure was fabricated on the (1101) facets of a GaN triangular structure prepared by selective area growth by metalorganic vapor phase epitaxy. The photoluminescence (PL) and cathode luminescence (CL) spectra were investigated to characterize the structure. It was found that the PL peak wavelength due to the GaN quantum well is dependent on the well thickness. However, the Al composition of the AlGaN layer is dependent on the position on the (1101) facet. The anomalous gradient of the composition is attributed to the difference in the diffusion coefficients of Al and Ga on the surface.

    DOI: 10.1143/jjap.40.1896

    CiNii Research

  150. Selective Area Growth of GaN on Si Substrate Using SiO2 Mask by Metalorganic Vapor Phase Epitaxy.

    Kawaguchi Yasutoshi, Honda Yoshio, Matsushima Hidetada, Yamaguchi Masahito, Hiramatsu Kazumasa, Sawaki Nobuhiko

    Japanese Journal of Applied Physics   Vol. 37 ( 8B ) page: L966 - L969   1998

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    Selective area growth (SAG) of GaN on (111) Si substrate was studied using AlGaN as an intermediate layer. A hexagonal dot with a (0001) plane on the top and of a 5 µm or a submicron size was obtained using a patterned dot structure of silicon dioxide (SiO<SUB>2</SUB>) mask. The facet structure revealed that the <11\=20> axis of hexagonal GaN is parallel to the <110> axis of the Si substrate. The cathodoluminescence (CL) spectrum at 133 K exhibited a strong near-band-edge emission band for the submicron dots, which suggests excellent crystallinity. Epitaxial lateral overgrowth (ELO) of GaN on the Si substrate is demonstrated.

    DOI: 10.1143/jjap.37.l966

    CiNii Research

  151. Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF MATERIALS CHEMISTRY C   Vol. 8 ( 25 ) page: 8668 - 8675   2020.7

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    DOI: 10.1039/d0tc01369b

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  152. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures Reviewed

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 7 ) page: .   2020.7

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  153. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

    Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 217 ( 14 )   2020.7

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    DOI: 10.1002/pssa.201900955

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  154. Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO Reviewed

    Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 6 ) page: .   2020.6

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  155. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Reviewed

    Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 539   page: .   2020.6

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  156. Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

    Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

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    Herein, a newly developed birefringence microscope is used to observe dislocations in gallium nitride (GaN) substrates. The comparison results of the observation method using this microscope with other observation methods, such as X-ray topography and Raman microscopy, confirms that dislocations in a GaN substrate can be detected with a birefringence microscope. In addition, the observation can be carried out as easily as with an optical microscope. It is also found that under certain observation conditions, the direction of the edge component of dislocations can be determined.

    DOI: 10.1002/pssb.201900553

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  157. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

    Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J, Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 116 ( 12 )   2020.3

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    DOI: 10.1063/1.5145017

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  158. Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 35 ( 3 )   2020.3

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    DOI: 10.1088/1361-6641/ab63f1

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  159. Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode

    Sato Daiki, Honda Anna, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

    MICROELECTRONIC ENGINEERING   Vol. 223   2020.2

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    The quantum efficiency (QE) of an InGaN photocathode as a function of InGaN layer thickness (240, 100, and 70 nm) was investigated. To activate the sample surface, Cs and O were deposited on the surface in an ultrahigh-vacuum chamber. The QE for different optical power densities was measured by irradiating excitation light from the front and back sides of each sample. The QEs for InGaN layer thickness of 240, 100, and 70 nm with back-side irradiation were 0.9, 9.8, and 7.5%, respectively. For the thicknesses of 70 and 100 nm, the QEs were higher for back-side irradiation than for front-side irradiation, whereas for the thickness of 240 nm, the QE was higher for front-side irradiation. The InGaN layer thickness dependence of the QEs for back- and front-side irradiations was calculated using a continuous equation considering processes such as excitation, diffusion, recombination, and escape of electrons from the surface of the photocathode. The tendency of the experimental results, where QE was maximum at 100-120 nm, corresponded to that of the calculated results.

    DOI: 10.1016/j.mee.2020.111229

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  160. Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

    Ye Zheng, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 2 )   2020.2

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    The decomposition of trimethylgallium (Ga(CH3)(3)) was examined under H-2 and N-2 atmospheres using a high-resolution (about 0.002 u) time-of-flight mass spectrometry system, which enabled the separation of N-2 and ethene (C2H4) signals. Under H-2 atmosphere, the main decomposition product was methane (CH4) formed by the hydrogenolysis of Ga(CH3)(3). However, under N-2 atmosphere, the main product is ethane (C2H6) at temperature lower than 660 degrees C. Above 660 degrees C, the C2H6 further decomposes into CH4, acetylene (C2H2) and C2H4, and the main components in the gas phase are C2H2 and C2H4 above 1000 degrees C. Since these are effective carbon dopants, the molar ratio of H-2 to the Ga(CH3)(3) raw material in the carrier gas should be maintained above 300 to inhibit the formation of hydrocarbons in N-2. (C) 2020 The Japan Society of Applied Physics

    DOI: 10.35848/1347-4065/ab6fb0

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  161. Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    2D MATERIALS   Vol. 7 ( 1 )   2020.1

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    We studied the nucleation and growth of hexagonal BN (h-BN) on AlN template on c-plane sapphire by metalorganic vapor phase epitaxy as functions of growth temperature, deposition time, and triethylboron (TEB) partial pressure. A lateral growth rate of about 25 nm min(-1) for h-BN nuclei was obtained by atomic force microscopy and a nucleation activation energy of 2.1 eV was extracted from the temperature dependence of the nucleation density. A large TEB flow rate strongly enhances the formation of h-BN nuclei. At a reduced TEB flow rate, we observed a significantly decreased nuclei density and a delay in nucleation due to TEB desorption. By fine tuning the growth parameters, single-crystalline multilayer h-BN was successfully formed on AlN surface, as confirmed by x-ray diffraction and transmission electron microscopy (TEM). The epitaxial relationship between h-BN and AlN was [0 0 0 1](h-BN) parallel to [0 0 0 1](AlN) and [1 0 -10](h-BN) parallel to [1 1 -20](AlN) from TEM and electron backscatter diffraction measurements. In addition, TEM showed that the initial h-BN layers are not parallel and tend to form half-domes. On those half-domes (cap-shaped-like) a 2D lateral growth sets on, resulting in a well-oriented 2D multilayer observed in TEM. Thus, the surface topography further develops to form a relatively flat surface without wrinkles and finally a typical hexagon-like wrinkled surface at thicker h-BN layers. Particularly, the small h-BN nuclei have dangling bonds at their periphery that can interact with the substrate, forming actual bonds with AlN. Hence the choice on the substrate is important, despite the basal planes of multilayer h-BN are bonded by a weak van der Waals force.

    DOI: 10.1088/2053-1583/ab46e6

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  162. Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

    Dinh Duc V, Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 34 ( 12 )   2019.12

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    DOI: 10.1088/1361-6641/ab4d2c

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  163. Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency. Reviewed

    Sandupatla A, Arulkumaran S, Ranjan K, Ng GI, Murmu PP, Kennedy J, Nitta S, Honda Y, Deki M, Amano H

    Sensors (Basel, Switzerland)   Vol. 19 ( 23 )   2019.11

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    DOI: 10.3390/s19235107

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  164. Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

    Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SCIENTIFIC REPORTS   Vol. 9 ( 1 ) page: 15802   2019.11

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    DOI: 10.1038/s41598-019-52067-y

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  165. V-shaped dislocations in a GaN epitaxial layer on GaN substrate

    Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

    AIP ADVANCES   Vol. 9 ( 9 )   2019.9

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    In this study, V-shaped dislocations in a GaN epitaxial layer on a free-standing GaN substrate were observed. Our investigation further revealed that the V-shaped dislocations were newly generated at the interface in the epilayer rather than propagated from the GaN substrate. V-shaped dislocations consist of two straight parts. The straight parts of the V-shaped dislocations were separated from each other in the m-direction and tilted toward the step-flow direction of the GaN epitaxial layer. The V-shaped dislocations are continuous single dislocations having a Burgers vector component of 1a and an intrinsic stacking fault between their straight parts.

    DOI: 10.1063/1.5114866

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    Scopus

  166. Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Torigoe Kazuhisa, Kushimoto Maki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 7 )   2019.7

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    DOI: 10.7567/1347-4065/ab2657

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  167. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

    Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 516   page: 63 - 66   2019.6

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    The decomposition of ammonia (NH3) in nitrogen (N-2) ambient was studied under non-equilibrium conditions similar to those in a metal organic vapor phase epitaxy (MOVPE) reactor during the epitaxial growth of group-III nitrides. The gas phase was sampled at different positions and analyzed using a time-of-flight mass spectrometry system with a high resolution (better than 0.002 u). Our results expand earlier findings. Even at the high temperature of 1200 degrees C, only 26% of NH3 decomposed in a clean metal-free reactor, whereas a higher ratio of NH3 decomposition was realized in the presence of stainless steel. The activation energy in the clean reactor was calculated to be 0.965 +/- 0.004 eV. These results demonstrate the capability of our setup and shed new light on the elucidation of the vapor phase growth mechanism of group III-nitrides by MOVPE.

    DOI: 10.1016/j.jcrysgro.2019.03.025

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  168. Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

    Liu Qiang, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab124e

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  169. Frontiers of Nitride Semiconductor Research FOREWORD

    Chichibu Shigefusa F, Kumagai Yoshinao, Kojima Kazunobu, Deura Momoko, Akiyama Toru, Arita Munetaka, Fujioka Hiroshi, Fujiwara Yasufumi, Hara Naoki, Hashizume Tamotsu, Hirayama Hideki, Holmes Mark, Honda Yoshio, Imura Masataka, Ishii Ryota, Ishitani Yoshihiro, Iwaya Motoaki, Kamiyama Satoshi, Kangawa Yoshihiro, Katayama Ryuji, Kawakami Yoichi, Kawamura Takahiro, Kobayashi Atsushi, Kuzuhara Masaaki, Matsumoto Koh, Mori Yusuke, Mukai Takashi, Murakami Hisashi, Murotani Hideaki, Nakazawa Satoshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab1411

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  170. Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

    Nan Hu, Dinh Duc V, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab1252

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  171. Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285nm deep-ultraviolet LEDs grown on AlN templates having macrosteps

    Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Ipponmatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 6 )   2019.6

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    DOI: 10.7567/1882-0786/ab21a9

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  172. Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 514   page: 13 - 13   2019.5

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    DOI: 10.1016/j.jcrysgro.2019.02.058

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  173. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

    Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 512   page: 78 - 83   2019.4

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    This study examines the effect of (0 0 0 −1) GaN substrate misorientation on the residual impurities and surface morphology of N-polar GaN grown by metalorganic vapor-phase epitaxy. Carbon, silicon, and oxygen concentrations decreased with increasing GaN substrate misorientation angle, with the lowest impurity concentration achieved for a misorientation angle of 2° toward the m-axis, with 6 × 10 15 cm −3 carbon, 6 × 10 15 cm −3 silicon, and 4 × 10 17 cm −3 oxygen atoms. The oxygen concentration was measured at a depth of 0.5 μm below the wafer surface, and the oxygen concentration decreased with increasing thickness. The incorporation of carbon and oxygen revealed a strong dependence on the misorientation angle. The step distance height of the steps parallel to the [1 1 −2 0] direction (or perpendicular to the [1 −1 0 0] m-direction) was confirmed to be a double-height layer step. This phenomenon indicated that m-direction steps are stable for N-polar growth in GaN. In cases of large misorientation toward the m-axis in of the GaN substrate it was difficult to control the misorientation perpendicular to the nominal direction leading to a-axis direction by wafer bowing at wafer manufacturing. Therefore, step-bunching was generated for each symmetric m-axis due to an increase in the compound's off-angle, thus causing the surface roughness to become large.

    DOI: 10.1016/j.jcrysgro.2019.02.013

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  174. Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method Reviewed

    Yamada Jumpei, Usami Shigeyoshi, Ueda Yuki, Honda Yoshio, Amano Hiroshi, Maruyama Takahiro, Naritsuka Shigeya

    Jpn. J. Appl. Phys.   Vol. 58 ( 4 )   2019.3

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    DOI: 10.7567/1347-4065/aafe70

  175. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

    Zhibin Liu, Shugo Nitta, Shigeyoshi Usami, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 509   page: 50 - 53   2019.3

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    Wafer trays with different gaps (the distance between the top of the pocket and the bottom of the wafer) were used to grow InGaN/GaN multiple quantum wells (MQWs) in a horizontal metalorganic vapor phase epitaxy (MOVPE) reactor. The numerical reactor simulation revealed that at the similar surface temperature the gas phase temperature around the wafer increases due to an increased wafer tray temperature. This increased gas phase temperature is expected to increase the effective V/III ratio by enhanced NH3 decomposition. Photoluminescence (PL) intensities of long-wavelength MQWs increased at the same indium content by the enhanced gas phase temperature, while the emission became narrow. This is related to a smoother topography at higher gas phase temperatures.

    DOI: 10.1016/j.jcrysgro.2018.12.007

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  176. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

    Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

    MATERIALS   Vol. 12 ( 5 )   2019.3

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    DOI: 10.3390/ma12050689

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    PubMed

  177. Morphological study of InGaN on GaN substrate by supersaturation

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 508   page: 58 - 65   2019.2

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    DOI: 10.1016/j.jcrysgro.2018.12.028

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  178. How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

    Hu Nan, Dinh Duc V, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 507   page: 205 - 208   2019.2

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    DOI: 10.1016/j.jcrysgro.2018.11.013

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  179. Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

    Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

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    A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p-n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p-n diode with a simple edge termination that has a drift layer etched deeply and vertically. A device simulation revealed that the electric field was more relaxed at the device edge and applied uniformly in the entire device with increasing etching depth. We fabricated the simulated structure and succeeded in reducing the leakage current and improving the breakdown voltage. With this structure, a stable avalanche breakdown can be observed. (C) 2019 The Japan Society of Applied Physics

    DOI: 10.7567/1882-0786/aafdb9

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  180. Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps

    Kojima K, Nagasawa Y, Hirano A, Ippommatsu M, Honda Y, Amano H, Akasaki I, Chichibu S. F

    APPLIED PHYSICS LETTERS   Vol. 114 ( 1 )   2019.1

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    DOI: 10.1063/1.5063735

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  181. Observation of Dopant Concentration in GaN Semiconductor by High Sensitivity Electron Holography

    Nakano Kiyotaka, Honda Yoshio, Amano Hiroshi, Matsumoto Miko, Anada Satoshi, Yamamoto Kazuo, Ishikawa Yukari, Hirayama Tsukasa, Ando Yuto, Ogura Masaya, Tanaka Atsushi

    Materia Japan   Vol. 58 ( 2 ) page: 103-103 - 103   2019

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:The Japan Institute of Metals and Materials  

    DOI: 10.2320/materia.58.103

    CiNii Research

  182. Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method

    Kashima Masahiro, Sato Daiki, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi, Iijima Hokuto, Meguro Takashi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 36 ( 6 )   2018.11

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    A III-V semiconductor with a few monolayers of alkali metals (e.g., Cs) forms a negative electron affinity (NEA) surface, for which the vacuum level lies below the conduction band minimum of the base semiconductor. The photocathodes that form an NEA surface (NEA photocathodes) have various advantages, such as low emittance, a large current, high spin polarization, and ultrashort pulsed operation. The NEA-InGaN photocathode, which is sensitive to blue light, has been studied as a material for the next-generation robust photocathode. However, the proper conditions for forming NEA surfaces remain unknown. The authors consider whether the suitable process for NEA surfaces can be understood by investigating the relationship between the electron emission and the adsorption state of alkali metals. In this study, the relationship between the electron emission and the adsorption state of Cs on the p-type InGaN (0001) was analyzed by the temperature programed desorption (TPD) method using a quadrupole mass spectrometer. From the results of the TPD measurements, it was shown that there were several adsorption states of Cs on InGaN. The quantum efficiency (QE), which indicates the ratio of emitted electrons to incident photons, increased while Cs desorption occurred. The authors divided the formation process of an NEA surface into several sections to investigate the adsorption states of Cs related to the electron emission and to discuss the reasons why the QE increased despite the desorbed Cs. From the results of the NEA activation in each section, it was shown that there were sections where the QE increased by reacting with O-2 after Cs supply stopped. There is a possibility that several layers reacting with O-2 and those not reacting with O-2 are formed by performing NEA activation until the QE saturates. From the results of the TPD measurements in each section, it was suggested that there was a Cs peak at above 700 degrees C when the TPD method was carried out immediately after confirming the electron emission. Therefore, the adsorption state of Cs that formed a peak at above 700 degrees C had a close relation to the electron emission. It is considered that the increase of the QE in the TPD was affected by adsorbed Cs compounds that reacted with O-2. Although the mechanism is not understood, it is known that the QE was increased by the reaction of Cs adsorbed compounds and O-2 in previous studies. It was suspected that layers that reacted with O-2 appeared from TPD and then the QE increased by reacting with O-2. Published by the AVS.

    DOI: 10.1116/1.5048061

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  183. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy Reviewed

      Vol. 57 ( 10 )   2018.10

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    DOI: 10.7567/JJAP.57.105501

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  184. High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 498   page: 377 - 380   2018.9

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    DOI: 10.1016/j.jcrysgro.2018.07.015

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  185. Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition Reviewed

      Vol. 57 ( 9 )   2018.9

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    DOI: 10.7567/JJAP.57.091001

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  186. Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

    Barry Ousmane I, Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 12 ( 8 )   2018.8

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    DOI: 10.1002/pssr.201800124

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  187. Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering

    Ueoka Yoshihiro, Deki Meneto, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 7 )   2018.7

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    DOI: 10.7567/JJAP.57.070302

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  188. Study on the Main-Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN-Based DUV-LEDs

    Kiho Yamada, Yosuke Nagasawa, Shoko Nagai, Akira Hirano, Masamichi Ippommatsu, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki

    Physica Status Solidi (A) Applications and Materials Science   Vol. 215 ( 10 )   2018.5

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    The main chain structure of optically isotropic amorphous fluorine resin for encapsulating AlGaN-based deep-ultraviolet LEDs (λ &lt
    300 nm) is studied. One type of amorphous fluorine resin has a five-membered ring with a single oxygen atom and the other has that one with two oxygen atoms. Reliability testing is performed using AlGaN-based LEDs of 262 and 289 nm. For the resin with two oxygen atoms in the ring, visible damage to the electrode and significantly increased leakage current are considered to been caused by the photolysis of the ring induced by irradiation with deep-ultraviolet light. In contrast, electrode damage and increased leakage are not observed in the case of the resin with the single-oxygen ring.

    DOI: 10.1002/pssa.201700525

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    Scopus

  189. m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates

    Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    Physica Status Solidi (A) Applications and Materials Science   Vol. 215 ( 9 )   2018.5

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    In this study, GaN m-plane Schottky barrier diodes are fabricated by metalorganic vapor-phase epitaxy (MOVPE) on several off-angle gallium nitride (GaN) substrates, and the off-cut angle dependence of impurity incorporation is investigated. We show that the MOVPE layer on the substrate inclined 5° toward the [000–1] direction has extremely low impurity incorporation. These results provide important suggestions for the fabrication of m-plane power devices.

    DOI: 10.1002/pssa.201700645

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    Scopus

  190. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy Reviewed

      Vol. 11 ( 5 )   2018.5

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    DOI: 10.7567/APEX.11.051002

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  191. Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching

    Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, Hiroshi Amano

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 255 ( 5 )   2018.5

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    A gallium nitride (GaN) epitaxial layer with a low density of threading dislocations is successfully grown on a silicon substrate by using in situ gas etching. Silicon nitride (SiNx) film is used as a mask, and ammonia is intermittently supplied in hydrogen ambient during the etching. After etching, high-density deep pits appeared on the surface of a GaN template layer and corresponded to the threading dislocations in the layer. In this novel method, before growing an additional GaN layer on the template GaN layer, a second SiNx layer is deposited after the etching process, and this layer prevents GaN nuclei from growing on the upper side-walls of the pits. By using this method, the density of threading dislocations of the GaN surface is reduced to 6.7x10(7)cm(-2). This method is cost effective, completing all the necessary processes in one growth run without taking samples out from a metalorganic chemical vapor deposition (MOCVD) reactor.

    DOI: 10.1002/pssb.201700387

    Web of Science

  192. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Sugawara, Yong-Zhao Yao, Yukari Ishikawa

    APPLIED PHYSICS LETTERS   Vol. 112 ( 18 )   2018.4

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    Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that lc pure screw dislocations are related to the reverse leakage in vertical p-n diodes. Published by AIP Publishing.

    DOI: 10.1063/1.5024704

    Web of Science

  193. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy International journal

    Xu Yang, Shugo Nitta, Kentaro Nagamatsu, Si-Young Bae, Ho-Jun Lee, Yuhuai Liu, Markus Pristovsek, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 482   page: 1 - 8   2018.1

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    Hexagonal boron nitride (h-BN) was directly grown on sapphire substrate using alternating ammonia (NH3) and triethylboron (TEB) supply (pulsed mode) in metalorganic vapor phase epitaxy. The best condition is when just enough NH3 is supplied to fully convert the TEB within one cycle. Excess NH3 caused islands on h-BN film surface while a lack of NH3 does not form h-BN at all. The epitaxial relationship between grown h-BN layer and c-plane sapphire was confirmed to be [0001](h-BN)||[0001](sapphire) and [10-10](h-BN)||[11-20](sapphire). It is known that, compared to AlN, BN requires higher V/III ratios for good crystallinity, which due to severe gas-phase reactions is difficult to achieve using continuous supply. Thus using pulsed mode the FWHM of the symmetric (0002) diffraction was almost halved and the growth rate was several times faster. (C) 2017 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2017.10.036

    Web of Science

  194. Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN

    Nakano Takashi, Araidai Masaaki, Shiraishi Kenji, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8   Vol. 86 ( 12 ) page: 41 - 49   2018

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    DOI: 10.1149/08612.0041ecst

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  195. Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes

    Yates Luke, Pavlidis Georges, Graham Samuel, Usami Shigeyoshi, Nagamatsu Kentaro, Honda Yoshio, Amano Hiroshi

    PROCEEDINGS OF THE 17TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2018)     page: 831-837   2018

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  196. Charge-to-time converting leading-edge discriminator for plastic-scintillator signals International journal

    T. Ishikawa, Y. Takeda, Y. Honda, Y. Inoue, H. Kanda, S. Kido, Y. Matsumura, M. Miyabe, I. Nagasawa, H. Shimizu, T. Takeda, A. O. Tokiyasu, Y. Tsuchikawa, H. Yamazaki

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Vol. 875   page: 193 - 200   2017.12

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    We have developed a charge-to-time converting (QTC) leading-edge discriminator for plastic-scintillator signals, which is packaged in a NIM-standard double-width module. The pulse width of the discriminator output is approximately proportional to the charge integration of input signals up to 40-50 pC. The non-linearity is 20%, 10%, 4%, and 2% at maximum for the input charges below 7 pC, for 7-10 pC, for 10-20 pC, and above 20 pC, respectively, for the minimum input charges larger than 2 pC. The discriminator could be suitable in the measurement of the timing and charge of plastic-scintillator signals together with a multi-hit time-to-digital converter (TDC) module. (C) 2017 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nima.2017.09.040

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  197. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes International journal

    Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano

    APPLIED PHYSICS LETTERS   Vol. 111 ( 12 )   2017.9

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    Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.

    DOI: 10.1063/1.4994627

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  198. Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system International journal

    Kentaro Nagamatsu, Shugo Nitta, Zheng Ye, Hirofumi Nagao, Shinichi Miki, Yoshio Honda, Hiroshi Amano

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 254 ( 8 )   2017.8

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    In this study, by using time-of-flight (TOF) high-resolution and high-sensitivity mass spectrometry measurements, the decomposition of trimethylgallium into dimethylgallium and monomethylgallium along with its adduct formation with NHx in a commercially available horizontal metalorganic vapor-phase epitaxy (MOVPE) reactor with a resistive heater was investigated and observed in more detail than previously reported. The results confirmed the use of the TOF monitoring system in analyzing the elementary reaction process in actual MOVPE systems. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssb.201600737

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  199. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations International journal

    Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, Hiroshi Amano

    APPLIED PHYSICS EXPRESS   Vol. 10 ( 8 )   2017.8

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    The internal electric fields in III-polar (0001), N-polar (0001), and semipolar (1011) InGaN/GaN light-emitting diodes were investigated by electroreflectance (ER) spectroscopy. The ER spectra reflected the difference in the direction and strength of internal electric fields. Phase analyses of the ER signal revealed that only III-polar InGaN wells have the opposite direction of the internal electric field at zero bias voltage; this finding is in good agreement with the results of numerical analyses. Quantitative analyses of internal electric fields were conducted by the linewidth analyses of ER spectra. Our experimental results indicate that the absolute value of internal electric fields can be measured from ER spectra. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/APEX.10.082101

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  200. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes International journal

    Shigeyoshi Usami, Ryosuke Miyagoshi, Atsushi Tanaka, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

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    We investigate the influence of crystal defects on p-type GaN grown by metalorganic vapor phase epitaxy. Sets of p-type GaN films were grown on sapphire substrates and on free-standing GaN (F-GaN) substrates simultaneously using various Et-Cp2Mg flow rates. Although there is a difference of two orders of magnitude between the threading dislocation densities of p-type GaN grown on sapphire and F-GaN substrates, there is no significant difference in hole concentration. However, there are problems with the surface morphology of p-type GaN grown on sapphire. The deterioration of the surface was caused by the difference in nanopipe density. The electrical properties of a p-n junction diode formed on sapphire with a high density of nanopipes were observed using emission microscopy under both forward- and reverse-bias conditions. Our results demonstrate that the nanopipes are electrically inactive, and that other types of threading dislocation have more influence on the current-voltage characteristics.

    DOI: 10.1002/pssa.201600837

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  201. Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants

    Si-Young Bae, Kaddour Lekhal, Ho-Jun Lee, Jung-Wook Min, Dong-Seon Lee, Yoshio Honda, Hiroshi Amano

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 254 ( 8 )   2017.8

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    Injecting current with a uniform carrier concentration is important for applications with three-dimensional architectures such as vertical power devices or displays. In III-nitride nanostructures, dopants not only incorporate differently depending on the surface orientation but can also seriously affect the kinetic equilibrium shapes of the nanorods. Herein, we report selective-area growth of doped GaN nanorods grown by pulsed-mode metalorganic chemical vapor deposition. Two dopants, Si and Mg, were employed as donor and acceptor atoms, respectively, for a mono-doping approach. Furthermore, a mixed flow of Si and Mg was supplied for a co-doping approach. We compared the morphological effects and growth rates of each doped GaN nanorod array. Then, we proposed appropriate growth mechanisms for the doped GaN nanorods on the basis of our structural characterizations. These results might extend the morphological functionality of GaN nanorods by including doping and may also provide an appropriate foundation for the design of nanostructure-based electronic or photonic devices. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssb.201600722

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  202. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE International journal

    Atsushi Tanaka, Ousmane Barry, Kentaro Nagamatsu, Junya Matsushita, Manato Deki, Yuto Ando, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

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    In this study, GaN m-plane Schottky barrier diodes fabricated with a metalorganic vapor-phase epitaxy on a GaN substrate were investigated using emission microscope, photoluminescence, and cathodoluminescence. In addition, facet dependence of leakage current under reverse-biased condition was observed. We showed that the leakage-current distribution was caused by the facet dependence of the carrier concentration and oxygen concentration. These results can provide important suggestions for the fabrication of m-plane devices. (a) four-faceted hillocks on m-plane GaN MOVPE sample, facet dependence of (b) leakage current and (c) PL peak intensity of the m-plane GaN Schottky barrier diode.

    DOI: 10.1002/pssa.201600829

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  203. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer International journal

    Zheng Sun, Peifeng Song, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 866 - 869   2017.6

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    A-plane GaN was attempted to be grown on (11-20) 4H-SiC bulk substrate without using a traditional thick buffer layer. By inducing TMAl treatment before the GaN growth step and using both a low pressure and V/III ratio, the interlayer thickness of the a-plane GaN/SiC was reduced to 1.7 +/- 0.5 nm. The ultrathin interlayer was observed to be either AlN or AlGaN with a low Ga composition. This study is aimed to contribute to the understanding of GaN growth on the sidewalls of c-plane trench structure SiC. The ultrathin growth technique is also hoped to be applied to the fabrication of GaN-based vertical structure nonpolar optical or electrical devices.

    DOI: 10.1016/j.jcrysgro.2017.01.031

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  204. Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10(1)over-bar0) GaN homoepitaxial layers International journal

    Ousmane I. Barry, Atsushi Tanaka, Kentaro Nagamatsu, Si-Young Bae, Kaddour Lekhal, Junya Matsushita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 552 - 556   2017.6

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    We have investigated the effect of V/III ratio on the surface morphology, impurity concentration and electrical properties of m-plane (10 (1) over bar0) Gallium Nitride (GaN) homoepitaxial layers. Four-sided pyramidal hillocks are observed on the nominally on-axis m-plane GaN films. Hillocks sizes relatively increase by increasing the V/III ratio. All facets of pyramidal hillocks exhibit well-defined step-terrace features. Secondary ion mass spectrometry depth profiles reveal that carbon impurities decrease by increasing the V/III ratio while the lowest oxygen content is found at an optimized V/III ratio of 900. Vertical Schottky barrier diodes fabricated on the m-GaN samples were characterized. Low leakage current densities of the order of 10(-10) A/cm(2) at -5 V are obtained at the optimum V/III ratio. Oxygen impurities and screw-component dislocations around hillocks are found to have more detrimental impact on the leakage current mechanism.

    DOI: 10.1016/j.jcrysgro.2016.12.012

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  205. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer International journal

    Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Akira Tamura, Takafumi Suzuki, Maki Kushimoto, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 547 - 551   2017.6

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    We successfully grew semipolar (10 (1) over bar3) and (10 (1) over bar5) GaN films on Si(001) substrates employing metal-organic chemical vapor deposition (MOCVD) by inserting a directionally sputtered AlN (DS-AlN) buffer layer. To improve the crystal quality of the orientation-controlled semipolar (10 (1) over bar3) and (10 (1) over bar5) GaN films, a two-step epitaxial lateral overgrowth (ELO) process was performed with a striped mask. According to low-temperature cathodoluminescence (LT-CL) characterization, the ELO results in a coalesced morphology and a low defect density of &lt; 2.72x10(8) cm(-2) for both semipolar (10&lt;(1)over bar&gt;3) and (10 (1) over bar5) GaN films. For comparing the properties of planar and ELO semipolar GaN, a rocking curve of x-ray diffraction (XRD) and low-temperature photoluminescence (LT-PL) spectra was measured. The crystal orientation of semipolar GaN films was confirmed using electron backscatter diffraction (EBSD).

    DOI: 10.1016/j.jcrysgro.2016.11.116

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  206. Annealing effect on threading dislocations in a GaN grown on Si substrate International journal

    H. Iwata, H. Kobayashi, T. Kamiya, R. Kamei, H. Saka, N. Sawaki, M. Irie, Y. Honda, H. Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 835 - 838   2017.6

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    Effect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a (111) Si substrate was investigated by photoluminescence (PL) and transmission electron microscopy (TEM) analyses. The PL spectra suggested that the density of gallium vacancy is not changed by the heat treatment up to 700 degrees C. In the TEM specimen, we had dislocation half loops generated by off-axis propagation of the threading dislocation. We found that the half-loop of c-type dislocation shrinks/moves by a repetitive RTA at 600-700 degrees C. In contrast, we could find no remarkable changes in the a-type or a+c-type dislocations.

    DOI: 10.1016/j.jcrysgro.2017.01.001

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  207. Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer International journal

    S. -Y. Bae, K. Lekhal, H. -J. Lee, T. Mitsunari, J. -W. Min, D. -S. Lee, M. Kushimoto, Y. Honda, H. Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 110 - 113   2017.6

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    Severe melt-back etching has forced the epitaxy of GaN on Si to use an AlN buffer layer for growing high-quality two-dimensional layers, despite its high resistivity. Herein, we report a metal-based pre-orienting layer (POL) for growing GaN nanostructures (NSs) to replace the traditional AlN buffer layer. Two metals, titanium (Ti) and hafnium (Hf), were evaluated as POLs. We succeeded in fabricating arrays of GaN NSs with highly preferred orientation using selective-area growth. The crystallographic phase of the POLs critically affected the evolved orientation of the crystals. Photoluminescence measurements revealed that GaN NSs with Hf-based POLs were of reasonably high quality. We believe that this result will facilitate broader III-V semiconductor applications using alternative substrates moving beyond conventional Si-based optoelectronics.

    DOI: 10.1016/j.jcrysgro.2016.10.032

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  208. Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output Reviewed

      Vol. 56 ( 6 )   2017.6

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    DOI: 10.7567/JJAP.56.061002

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  209. III-nitride core-shell nanorod array on quartz substrates Reviewed

      Vol. 7   2017.3

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    DOI: 10.1038/srep45345

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  210. AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method International journal

    Hunsoo Jeon, Injun Jeon, Gang Seok Lee, Sung Geun Bae, Hyung Soo Ahn, Min Yang, Sam Nyung Yi, Young Moon Yu, Yoshio Honda, Nobuhiko Sawaki, Suck-Whan Kim

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

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    High Al-composition AlGaN and AlN epilayers were grown directly on Si(111) substrate by a hydride vapor phase epitaxy (HVPE) method with a melted mixed source in a graphite boat set in a source zone with high temperatures of T = 700 and 800 degrees C, respectively. The presence of the Ga material in the mixed source of Ga and Al promoted the growth of AlN and AlGaN epilayers in the growth zone. When the temperature in the source zone was 800 degrees C, the crystalline quality of the AlN and AlGaN epilayers increased as the ratio of Ga to Al increased, and the optimum mix ratio of Ga to Al for the growth of AlN epilayers was approximately 0.35-0.42, obtained from a numerical fitting analysis of the X-ray diffraction (XRD) data for these epilayers. It appears that they can be grown directly by our melted-mixed-source HVPE method in a high-temperature source zone. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.56.01AD07

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  211. Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy International journal

    Gang Seok Lee, Hunsoo Jeon, Hyung Soo Ahn, Min Yang, Sam Nyung Yi, Young Moon Yu, Sang Chil Lee, Yoshio Honda, Nobuhiko Sawaki, Suck-Whan Kim

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

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    We developed a vertical-type light-emitting diode (LED) in which the substrate is removed using a hydride vapor phase epitaxy (HVPE) apparatus consisting of a multi-graphite boat filled with a mixed source and a high-temperature (T approximate to 900 degrees C) RF heating coil outside the source zone. The new chip-growth process with a significant reduction in the number of production steps is completed in only four steps, namely, photolithography, epitaxial layer growth, sorting, and metallization. We analyze the emission mechanism of these lights from measurement results to validate the characteristics of the light emitted from these vertical-type blue LEDs and white LEDs (WLEDs) without substrates, and propose that this mixed-source HVPE method may be a promising production technique for LEDs. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.56.01AD03

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  212. Development of Sustainable Smart Society based on Transformative Electronics Reviewed

        page: .   2017

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  213. Development of Sustainable Smart Society based on Transformative Electronics

    Ogura M, Ando Y, Usami S, Nagamatsu K, Kushimoto M, Deki M, Tanaka A, Nitta S, Honda Y, Pristovsek M, Kawai H, Yagi S, Amano H

    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     page: .   2017

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  214. Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer International journal

    Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Tadashi Mitsunari, Akira Tamura, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 454   page: 114 - 120   2016.11

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    The planar epitaxial growth of semipolar (10 (1) over bar3) GaN on a Si(001) substrate was performed on a directionally sputtered AlN buffer layer. Three types of interlayers, i.e., single AlN, double AlN, and a stack of AlN/GaN layers were grown by metalorganic chemical vapor deposition (MOCVD) to achieve high quality GaN films. The results for the stack of AlN/GaN layers provide highest crystal quality and optical properties for GaN. Comparing the top (Ga face) and bottom (N face) surfaces of grown semipolar (10 (1) over bar3) GaN confirms the defect density reduction that is due to the application of interlayers. Moreover, reduced inversion domain density on the bottom surface is attributed with the insertion of interlayers. Improving the quality of semipolar GaN on Si(001) substrates is expected to be useful for GaN/Si(001) integrated optoelectronics. (C) 2016 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2016.09.004

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  215. Controlled morphology of regular GaN microrod arrays by a selective area growth with HVPE International journal

    Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 447   page: 55 - 61   2016.8

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    The selective area growth (SAG) of GaN was implemented on patterned GaN/sapphire templates by hydride vapor phase epitaxy (HVPE) to fabricate regular arrays of Ga-polar GaN microrods. The control of growth parameters such as H-2/N-2 carrier gas ratio, growth temperature, and absolute NH3/HCl gas flow resulted in changes in the growth morphology. In particular, for an optimized mixed-carrier gas ratio of H-2 to N-2, we achieved vertically well-aligned microrods. The topmost regions of the GaN microrods were terminated with pyramidal facets, indicating typical Ga polarity. The optical properties of the grown microrods were characterized by cathodoluminescence (CL) at a low temperature. This revealed that the GaN microrods had high crystal quality since they exhibited suppressed yellow luminescence as well as strong band edge emission. (C) 2016 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2016.05.008

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  216. Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study International journal

    Shoko Nagai, Kiho Yamada, Akira Hirano, Masamichi Ippommatsu, Masahiro Ito, Naoki Morishima, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 8 )   2016.8

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    To replace mercury lamps with AlGaN-based deep-ultraviolet (DUV) LEDs, a simple and low-cost package with increased light extraction efficiency (LEE) is indispensable. Therefore, resin encapsulation is considered to be a key technology. However, the photochemical reactions induced by DUV light cause serious problems, and conventional resins cannot be used. In the former part of this study, a comparison of a silicone resin and fluorine polymers was carried out in terms of their suitability for encapsulation, and we concluded that only one of the fluorine polymers can be used for encapsulation. In the latter part, the endurance of encapsulation using the selected fluorine polymer was investigated, and we confirmed that the selected fluorine polymer can guarantee a lifetime of over 6,000 h at a wavelength of 265nm. Furthermore, a 3 x 4 array module of encapsulated dies on a simple AlN submount was fabricated, demonstrating the possibility of W/cm(2)-class lighting. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.082101

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  217. Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering International journal

    Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Tadashi Mitsunari, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    Using an in situ laser absorption and scattering method, the surface roughness and incorporation of In in InGaN layers grown by metal organic vapor-phase epitaxy (MOVPE) were monitored. We observed that the laser light with energy higher than the GaN bandgap was fully absorbed in a GaN layer with a smooth film surface. On the other hand, we observed that the scattering laser light from the surface when the roughness of the InGaN surface increased owing to the formation of In droplets. Laser light with energy lower than the GaN bandgap was weakly absorbed by the GaN layer and was scattered at the back surface of the wafer. Furthermore, laser light intensity decreased during InGaN growth because of In incorporation. The threshold of trimethyl-In (TMIn) for the formation of In droplets as a function of growth temperature was determined using our in situ system. Moreover, we observed that the In droplets were removed by thermal or H-2 treatment. The results indicate that multiwavelength laser absorption and scattering enable the optimization of the growth conditions for In-rich InGaN. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FD03

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  218. Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy

    Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    We investigated the surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy using an ab initio-based approach. We observed that the reconstructed structure changes from In-rich surfaces such as In bilayer and monolayer surfaces to an ideal surface with increasing growth temperature. In addition, we investigated the effects of surface reconstruction on the growth process using a newly improved thermodynamic analysis method. Although no barrier is present in the growth reaction when the In-rich surfaces appear, the results suggest that the surface phase acts as a barrier in the growth reaction when the ideal surface appears. Furthermore, we discuss the growth conditions that enable high-temperature growth with a smooth reaction path. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FM01

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  219. Study of radiation detection properties of GaN pn diode

    Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, Takayuki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    Recently, GaN, which has remarkable properties as a material for optical devices and high-power electron devices, has also attracted attention as a material for radiation detectors. We previously suggested the use of BGaN as a neutron detector material. However, the radiation detection characteristics of GaN itself are not yet adequately understood. For realizing a BGaN neutron detector, the understanding of the radiation detection characteristics of GaN, which is a base material of the neutron detector, is important. In this study, we evaluated the radiation detection characteristics of GaN. We performed I-V and energy spectrum measurements under alpha ray, gamma ray, and thermal neutron irradiations to characterize the radiation detection characteristics of a GaN diode. The obtained results indicate that GaN is an effective material for our proposed new BGaN-based neutron detector. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FJ02

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  220. Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum International journal

    Si-Young Bae, Byung Oh Jung, Kaddour Lekhal, Dong-Seon Lee, Manato Deki, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    We report on the material and optical properties of core-shell InGaN layers grown on GaN nanorod arrays. The core-shell InGaN layers were well grown on polarization-reduced surfaces such as semipolar pyramids and nonpolar sidewalls. In addition, to compensate the biaxial strain between GaN and InGaN layers, we grew interlayers underneath a thick InGaN layer. Here, the interlayers were composed of multiple superlattice structures. We could observe that the indium composition of core-shell InGaN structures increased with the number of interlayers. This indicates that the absorption energy band of InGaN alloys can be better matched to the spectral irradiance of the solar spectrum in nature. We also implemented a simulation of Ga-polar and nonpolar InGaN-based solar cells based on the indium composition obtained from the experiments. The result showed that nonpolar InGaN solar cells had a much higher efficiency than Ga-polar InGaN solar cells with the same thickness of the absorption layer. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FG03

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  221. Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy International journal

    Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    In this paper, we discuss the influence of parameters such as type of carrier gas and NH3/HCl flow ratio on the growth of vertical GaN microstructures by selective-area growth (SAG) hydride vapor phase epitaxy (HVPE). On various strain-induced templates such as GaN/sapphire, GaN/Si, and AlN/Si, regular arrays of Ga-polar GaN microrods were properly achieved by adjusting the growth parameters. The photoluminescence and micro-Raman measurements reveal not only the crystal quality of the GaN microrods but also strain distribution. These results will give insight into the control of the morphology of GaN microrods in terms of the strain induced from templates in SAG-HVPE. The precisely controlled arrays of GaN microrods can be used for next-generation light-emitting diodes (LEDs) by realizing InGaN/GaN multi-quantum wells (MQWs) with a radial structure. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FF03

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  222. Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer International journal

    Zheng Sun, Kentaro Nagamatsu, Marc Olsson, Peifeng Song, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    Previously, we reported a growth method for GaN on SiC by metalorganic vapor phase epitaxy. By using a preflow trimethylaluminum treatment, the poor wetting problem of gallium on the SiC surface was alleviated, resulting in a 1.2-mu m-thick crack-free GaN grown on an on-axis 6H-SiC(0001) substrate via an ultrathin AlGaN interlayer. In this study, the impact of the preflow trimethylaluminum treatment time is investigated to understand why a crack-free epilayer was realized. To demonstrate the electrical performance of devices formed by our technique, GaN/SiC vertical Schottky barrier diodes were fabricated and compared with GaN/AlN/SiC and GaN/GaN vertical Schottky barrier diodes. Compared with diodes including a high-resistance AlN interlayer, the series resistance of GaN/SiC Schottky barrier diodes incorporating the ultrathin interlayer with 5 s of TMAl treatment showed a marked reduction from 4.0 x 10(7) to 2.0 x 10(-1) Omega.cm(2). The ultrathin interlayer growth technique is expected to be applied in future GaN/SiC hybrid high-power and high-frequency devices. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FB06

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  223. Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity International journal

    Daiki Sato, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    A thin p-type InGaN with a negative electron affinity (NEA) surface was used to measure the relaxation time of a surface charge limit (SCL) by irradiating rectangular laser beam pulses at changing time interval. The p-type InGaN film was grown by metal organic vapor phase epitaxy and the NEA activation was performed after the sample was heat cleaned. 13 nC per pulse with 10ms width was obtained from the InGaN photocathode. The current decreased exponentially from the beginning of the pulse. The initial current value after the laser irradiation decreased with the time interval. As a result, the SCL relaxation time was estimated through the InGaN photocathode measurements at 100 ms. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FH05

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  224. Growth of semipolar (1(1)over-bar01) high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001) International journal

    Maki Kushimoto, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    Low-toxity high-In-content InGaN is an attractive option for short-distance communications through plastic optical fibers because its performance is only slightly affected by temperature. However, its fabrication on the c-plane is impaired by In droplets and V pits, which form at low-growth temperature. On the other hand, unlike the c-plane, (1 (1) over bar 01) InGaN relaxes with tilting. Therefore, in this study, we first grew a high-In-content InGaN single layer, and then we fabricated an InGaN tilting layer between (1 (1) over bar 01) InGaN-based multiple quantum wells (MQWs) and GaN stripes/(001) Si. The emission wavelength increased with the InGaN tilting layer's growth time because the strain was relaxed by misfit dislocations at the heterointerface. This layer also extended the emission peak of InGaN/GaN MQWs and increased the photoluminescence intensity with respect to that of a single-layered InGaN. Therefore, the InGaN tilting layer is effective for growing high-In-content (1 (1) over bar 01) InGaN MQWs. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FA10

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  225. Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy International journal

    Gang Seok Lee, Chanmi Lee, Hunsoo Jeon, Chanbin Lee, Sung Geun Bae, Hyung Soo Ahn, Min Yang, Sam Nyung Yi, Young Moon Yu, Jae Hak Lee, Yoshio Honda, Nobuhiko Sawaki, Suck-Whan Kim

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    Even though a patterned sapphire substrate (PSS) has been used for the growth of a high-quality epilayer because of its many advantages, it has not been successfully used to grow an AlN epilayer for ultraviolet (UV) light-emitting diodes (LEDs) on a PSS up to now. We report the growth of a high-quality AlN epilayer on a PSS, as a substrate for the manufacture of UV LEDs, by hydride vapor phase epitaxy (HVPE). The X-ray diffraction (XRD) peaks for the AlN epilayer grown on the PSS indicate that crystalline AlN with a wurtzite structure was grown successfully on the PSS. Furthermore, HVPE combining both in situ HVPE technology and liquid-phase epitaxy (LPE) using a mixed source is proposed as a novel method for the growth of a flat AlN epilayer on a PSS. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FC02

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  226. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode International journal

    Byung Oh Jung, Si-Young Bae, Seunga Lee, Sang Yun Kim, Jeong Yong Lee, Yoshio Honda, Hiroshi Amano

    NANOSCALE RESEARCH LETTERS   Vol. 11 ( 1 ) page: 215   2016.4

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    We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.

    DOI: 10.1186/s11671-016-1441-6

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    PubMed

  227. Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations

    Seunga Lee, Yoshio Honda, Hiroshi Amano, Jongjin Jang, Okhyun Nam

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 3 )   2016.3

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    Using a SiNx insertion layer to reduce dislocations, enhanced photovoltaic properties could be obtained in p-i-n InGaN/GaN heterojunction solar cell. To investigate the influence of the dislocations on the photovoltaic behaviors, a sample grown without SiNx insertion layer was identically prepared for comparison. From optical properties measurements, the reduction in the number of non-radiative centers and a stronger In localization effect was shown in the sample with SiNx insertion layer. However, the quantum confined stark effect was almost negligible in both the samples. Electrical properties measurement showed reduced saturation current and increased shunt resistance in the sample with SiNx insertion layer due to the reduced dislocation density. By comparing these results and using a numerical model, the influence of the dislocation density on the different photovoltaic properties such as open-circuit voltage and fill factor has been confirmed. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.030306

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  228. Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells International journal

    Seunga Lee, Yoshio Honda, Hiroshi Amano

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 49 ( 2 )   2016.1

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    To understand the effect of piezoelectric fields on carrier dynamics, we numerically investigated a simple p-GaN/i-InxGa1-xN/n-GaN solar cell structure. A reliable simulation model was obtained by comparing the experimental and simulated results in advance. The same p-i-n InGaN structures were re-simulated with and without the piezoelectric field effect, as spontaneous polarization remained unchanged. The sample with the piezoelectric field effect showed higher short current density (J(sc)), a staircase-like feature in its I-V curve, and higher open circuit voltage (V-oc) with a lower fill factor (F.F.) and reduced conversion efficiency (C.E.) than the sample with no piezoelectric fields. In addition, with increasing In fraction (x), the V-oc value gradually increased while the J(sc) value significantly decreased, correspondingly leading to a reduction in C.E. and F.F. values of the structure with the piezoelectric field effect. To solve the current loss problem, we applied various piezoelectric field elimination techniques to the simulated structures.

    DOI: 10.1088/0022-3727/49/2/025103

    Web of Science

  229. The interface analysis of GaN grown on 0 degrees off 6H-SiC with an ultra-thin buffer layer

    Zheng Sun, Akio Ohta, Seiichi Miyazaki, Kentaro Nagamatsu, Hojun Lee, Marc Olsson, Zheng Ye, Manato Deki, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 1 )   2016.1

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    Previously, we reported a growth method by metalorganic vapor phase epitaxy using a single two- dimensional growth step, resulting in 1.2-mu m crack-free GaN directly grown on 6H-SiC substrate. The introduction of Al-treatment prior to the standard GaN growth step resulted in improved surface wetting of gallium on the SiC substrate. Transmission electron microscope and energy dispersive spectrometer analysis of the epitaxial interface to the SiC determined that an ultra-thin AlGaN interlayer had formed measuring around 2-3 nm. We expect our growth technique can be applied to the fabrication of GaN/SiC high frequency and high power devices. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.010303

    Web of Science

  230. Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications International journal

    Akira Hirano, Yosuke Nagasawa, Masamichi Iypommatsu, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki

    UV and Higher Energy Photonics: From Materials to Applications   Vol. 9926   2016

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    AlGaN-based LEDs are expected to be useful for sterilization, deodorization, photochemical applications such as UV curing and UV printing, medical applications such as phototherapy, and sensing. Today, it has become clear that efficient AlGaN-based LED dies are producible between 355 and 250 nm with an external quantum efficiency (EQE) of 3% on flat sapphire. These dies were realized on flat sapphire without using a special technique, i.e., reduction in threading dislocation density or light extraction enhancement techniques such as the use of a photonic crystal or a patterned sapphire substrate. Despite the limited light extraction efficiency of about 8% owing to light absorption at a thick p-GaN contact layer, high EQEs of approximately 6% has been reproducible between 300 and 280 nm without using special techniques. Moreover, an EQE of 3.9% has been shown at 271 nm, despite the smaller current injection efficiency (CIE). The high EQEs are thought to correspond to the high internal quantum efficiency (IQE), indicating a small room for improving IQE. Accordingly, resin encapsulation on a simple submount is strongly desired. Recently, we have succeeded in demonstrating fluorine resin encapsulation on a ceramic sheet (chip-on-board, COB) that is mass-producible. Furthermore, the molecular structure of a resin with a durability of more than 10,000 h is explained in this paper from the photochemical viewpoint. Thus, the key technologies of AlGaN-based DUV-LEDs having an EQE of 10% within a reasonable production cost have been established. The achieved efficiency makes AlGaN-based DUV-LEDs comparable to high-pressure mercury lamps.

    DOI: 10.1117/12.2235398

    Web of Science

  231. Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition International journal

    Si-Young Bae, Byung Oh Jung, Kaddour Lekhal, Sang Yun Kim, Jeong Yong Lee, Dong-Seon Lee, Manato Deki, Yoshio Honda, Hiroshi Amano

    CRYSTENGCOMM   Vol. 18 ( 9 ) page: 1505 - 1514   2016

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    To extend the availability of nanostructure-based optoelectronic applications, vertically elongated nanorods with precisely controlled morphology are required. For group III nitrides, pulsed-mode growth has recently been reported as an effective method for growing nanorod arrays with geometric precision. Here, we demonstrated the growth of arrays of highly elongated nanorods on Si substrates by metal-organic chemical vapor deposition using a pulsed-mode approach. Unlike the thick and high (or middle)-quality GaN templates normally used, nanorod growth was performed on an ultrathin and low-quality AlN/Si platform. Using kinetically controlled growth conditions and a patterning process, exceptionally long GaN nanorods were achieved with high geometric precision. The grown nanorods showed considerably improved optical and structural properties while remaining in uniform arrays. This approach can be used with a variety of materials to obtain nanorods with high quality, high uniformity, and high aspect ratio, and it can also serve as an effective fabrication method for InAlGaN-alloyed core/shell nanostructures for optoelectronic nano-devices with ultrahigh efficiency.

    DOI: 10.1039/c5ce02056e

    Web of Science

  232. Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells International journal

    Hideaki Murotani, Yoichi Yamada, Yoshio Honda, Hiroshi Amano

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 252 ( 5 ) page: 940 - 945   2015.5

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:WILEY-V C H VERLAG GMBH  

    The optical properties of InGaN/GaN multiple quantum wells (MQWs) have been studied by means of photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy. The radiative and nonradiative recombination lifetimes were evaluated as a function of the excitation energy density. The radiative recombination lifetime decreased and subsequently reached a nearly constant value with increasing excitation energy density, which was attributed to screening of internal electric fields by photoexcited carriers. On the other hand, the nonradiative recombination lifetime increased and subsequently decreased with increasing excitation energy density. The initial increase in the nonradiative recombination lifetime could be attributed to saturation of nonradiative recombination centers with photoexcited carriers. The nonradiative recombination lifetime was found to decrease to a considerably weaker extent than that expected for the Auger recombination process of free carriers. This indicated that the decrease in the internal quantum efficiency (IQE) at high carrier densities could not be explained only by the Auger recombination process of free carriers. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssb.201451491

    Web of Science

  233. Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed

      Vol. 8 ( 2 ) page: 022702   2015.2

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  234. Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates

    Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

    Applied Physics Express   Vol. 8 ( 2 ) page: 022702   2015.2

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  235. Optically pumped lasing properties of (1(1)over-bar01) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates International journal

    Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

    APPLIED PHYSICS EXPRESS   Vol. 8 ( 2 )   2015.2

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    We demonstrated lasing action and investigated the optical properties of (1 (1) over bar 01) multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating (1 (1) over bar 01) InGaN MQW laser diodes on (001) Si. (C) 2015 The Japan Society of Applied Physics

    DOI: 10.7567/APEX.8.022702

    Web of Science

  236. Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region International journal

    Byung Oh Jung, Si-Young Bae, Sang Yun Kim, Seunga Lee, Jeong Yong Lee, Dong-Seon Lee, Yoshihiro Kato, Yoshio Honda, Hiroshi Amano

    NANO ENERGY   Vol. 11   page: 294 - 303   2015.1

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    Highly ordered, position-controlled gallium nitride (GaN) nanowire based multiple-quantum-wells (MQWs) core-shell architecture arrays are synthesized by metalorganic chemical vapor deposition (MOCVD). We investigate the possibility of using GaN nanowire arrays as a basal template for the growth of InxGa1-xN/GaN MQWs. The MQWs on three different crystal facets (c(-), m(-), and semipolar-plane) of GaN nanowire exhibit dissimilar structural properties. The structural characteristics of InGaN/GaN core-shell arrays are inspected by cross-sectional high-resolution transmission electron microscopy (HR-TEM). We also investigate the optical properties of MQW core-shell structure nanoarrays. The luminescent characteristics of InGaN/GaN core-shell structure arrays are determined by photoluminescence (PL) and cathodoluminescence (CL) measurements. The monochromatic CL images clearly show the light emission behavior of InGaN/GaN MQW coaxial structure. Two distinguishable light emission peaks were observed in the GaN nanowire based core-shell structure. The characteristic of light emission mainly depends on the properties of MQWs, which are generated from different crystal facets of GaN. In addition, the light emission intensity shows different behaviors depending on the area of the GaN nanowire m-plane. The results of this study suggest that GaN nanowire arrays can be used as a good alternative basal template for next-generation light-emitting diodes (LEDs). (C) 2014 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.nanoen.2014.11.003

    Web of Science

  237. Nature of yellow luminescence band in GaN grown on Si substrate International journal

    Shogo Ito, Taihei Nakagita, Nobuhiko Sawaki, Hyung Soo Ahn, Masashi Irie, Toshiki Hikosaka, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 53 ( 11 )   2014.11

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    High-optical-quality GaN was grown on a (111) Si substrate by metal-organic vapor phase epitaxy using an AlInN buffer layer and an indium doped AlN nucleation layer. The photoluminescence spectra at room temperature showed a strong and narrow edge-emission peak and weak defect-related emission bands. We found four spectral peaks in the green and yellow luminescence bands at G(0): 514.5 nm (2.410 eV), G(1): 546.5nm (2.269 eV), Y-1: 553.5nm (2.240 eV), and Y-0: 584.5nm (2.121 eV), independent of the growth methods/conditions. The results suggest that the emission is associated with an intrinsic defect such as a Ga vacancy. (C) 2014 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.53.11RC02

    Web of Science

  238. Quantum Efficiency and Life Time of GaN and InGaN with NEA-surface International journal

    Sato Daiki, Nishitani Tomohiro, Maekawa Takuya, Honda Yoshio, Amano Hiroshi

    IEICE technical report. Component parts and materials   Vol. 114 ( 202 ) page: 49-54 - 54   2014.9

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    The photocathode using Negative Electron Affinity (NBA) surface on a semiconductor has been applied for science technologies such as an elemental particle experiment as an electron beam source. Yet, since NBA-surface is fragile, it is necessary to figure out how to make its life time longer in order to develop new technologies. Then, we realized that considering the band gap in semiconductor, the life time becomes longer as the negative affinity goes even smaller. Therefore, we produced the photocathodes using GaN and InGaN that have wider band gaps than that of GaAs. As a result, using GaN and InGaN, we gained 17 times and 7 times longer life time NEA-surface than that of GaAs, respectively. On the other hand, the result indicates that we can produce the NEA-surface with only cesium.

    CiNii Books

  239. P-GaN by Mg Ion Implantation for Power Device Applications (シリコン材料・デバイス) International journal

    SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 114 ( 58 ) page: 109-112 - 112   2014.5

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    We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique and high temperature implantation, ion implantation damage was greatly reduced. This soft implantation made the post anneal more effectively to recover the implantation damage and activate the implanted Mg ions. We believe this p-GaN by Mg ion implantation will contribute to GaN to enter high output power device application field.

  240. P-GaN by Mg Ion Implantation for Power Device Applications

    SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

    IEICE technical report. Component parts and materials   Vol. 114 ( 57 ) page: 109-112 - 112   2014.5

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique and high temperature implantation, ion implantation damage was greatly reduced. This soft implantation made the post anneal more effectively to recover the implantation damage and activate the implanted Mg ions. We believe this p-GaN by Mg ion implantation will contribute to GaN to enter high output power device application field.

    CiNii Books

  241. P-GaN by Mg Ion Implantation for Power Device Applications

    SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

    IEICE technical report. Electron devices   Vol. 114 ( 56 ) page: 109-112 - 112   2014.5

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique and high temperature implantation, ion implantation damage was greatly reduced. This soft implantation made the post anneal more effectively to recover the implantation damage and activate the implanted Mg ions. We believe this p-GaN by Mg ion implantation will contribute to GaN to enter high output power device application field.

    CiNii Books

  242. Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask International journal

    Ji-Su Son, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 53 ( 5 )   2014.5

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    The characteristics of nonpolar a-plane (11 (2) over bar0) GaN (a-GaN) grown using single and double nanopillar SiO2 masks were investigated. The two nanopillar SiO2 masks were directly fabricated on an r-plane sapphire substrate and a-GaN by the epitaxial lateral overgrowth (ELOG) technique. Through the use of the single and double nanopillar SiO2 masks, the crystalline quality and optical properties of a-GaN were markedly improved because of the nanoscale ELOG effect and a number of voids in the single and double nanopillar SiO2 mask areas in comparison with the planar sample. The submicron pit densities of the planar, single, and double nanopillar mask samples were similar to 2 x 10(9), similar to 7 x 10(8), and similar to 4 x 10(8) cm(-2), respectively. The internal quantum efficiency (IQE) values at room temperature of three-period InGaN/GaN multiple quantum wells (MQWs) grown using the planar, single, and double nanopillar masks were 45, 60, and 68% at a carrier concentration of 1.0 x 10(18) cm(-3), respectively. (C) 2014 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.53.05FL01

    Web of Science

  243. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy International journal

    Guangxu Ju, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, Hiroshi Amano

    JOURNAL OF APPLIED PHYSICS   Vol. 115 ( 9 )   2014.3

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    The effects of GaN quantum barriers with changing growth temperatures on the interfacial characteristics of GaN/InGaN single quantum well (SQW) grown on GaN templates by metalorganic vapour phase epitaxy were in situ investigated by X-ray crystal truncation rod (CTR) scattering and X-ray reflectivity measurements at growth temperature using a laboratory level X-ray diffractometer. Comparing the curve-fitting results of X-ray CTR scattering spectra obtained at growth temperature with that at room temperature, the InxGa1-xN with indium composition less than 0.11 was stabile of the indium distribution at the interface during the whole growth processes. By using several monolayers thickness GaN capping layer to protect the InGaN well layer within temperature-ramping process, the interfacial structure of the GaN/InGaN SQW was drastically improved on the basis of the curve-fitting results of X-ray CTR scattering spectra, and the narrow full width at half-maximum and strong luminous intensity were observed in room temperature photoluminescence spectra. (C) 2014 AIP Publishing LLC.

    DOI: 10.1063/1.4867640

    Web of Science

  244. Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays International journal

    Cao Miao, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 53 ( 3 )   2014.3

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    Regularly distributed nanopyramid arrays with a highly uniform size were grown by selective-area growth. The nanopyramid size could be tuned by varying the growth time. Two emission peaks were observed from multiple quantum wells grown on the nanopyramids. The longer-wavelength peak originated from the apexes of pyramids with threefold symmetry. High-density stacking faults observed at these triangular apexes might be responsible for the higher indium incorporation. The formation of embedded voids inside the pyramids was explained by the different growth rates at the edge and center of the mask window caused by the low diffusion length. (C) 2014 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.53.030306

    Web of Science

  245. Novel activation process for Mg-implanted GaN International journal

    Shin Hashimoto, Takao Nakamura, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 388   page: 112 - 115   2014.2

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    A novel activation process for Mg-implanted GaN was demonstrated. As opposed to the conventional thermal annealing process, an H-2/NH3 alternating supply annealing process achieved better optical activation, stronger near-ullraviolel luminescence and weaker yellow luminescence in the phololuminescence spectroscopy. After this process, small hexagonal hillocks were observed on the surface, which indicated that crystal regrowth was induced by this process, consisting of decomposition of GaN by H-2 supplies and re-crystallization by NH3 supplies. It was revealed that the implanted Mg could easily be located at the activation site by means of crystal regrowth by this process. (C) 2013 Elsevier B.V. All rights reserved

    DOI: 10.1016/j.jcrysgro.2013.07.011

    Web of Science

  246. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching International journal

    Ji-Su Son, Yoshio Honda, Hiroshi Amano

    OPTICS EXPRESS   Vol. 22 ( 3 ) page: 3585 - 3592   2014.2

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:OPTICAL SOC AMER  

    Nonpolar a-plane (11-20) GaN (a-GaN) layers with low overall defect density and high crystalline quality were grown on r-plane sapphire substrates using etched a-GaN. The a-GaN layer was etched by pulse NH3 interrupted etching. Subsequently, a 2-mu m-thick Si-doped a-GaN layer was regrown on the etched a-GaN layer. A fully coalescent n-type a-GaN layer with a low threading dislocation density (similar to 7.5 x 10(8) cm(-2)) and a low basal stacking fault density (similar to 1.8 x 10(5) cm(-1)) was obtained. Compared with a planar sample, the full width at half maximum of the (11-20) X-ray rocking curve was significantly decreased to 518 arcsec along the c-axis direction and 562 arcsec along the m-axis direction. (C) 2014 Optical Society of America

    DOI: 10.1364/OE.22.003585

    Web of Science

    PubMed

  247. Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate Reviewed

        page: 90030E-90030E-6   2014

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  248. Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask Reviewed

      Vol. 53 ( 5S1 ) page: 05FL01   2014

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  249. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH< sub> 3</sub> interrupted etching Reviewed

      Vol. 22 ( 3 ) page: 3585-3592   2014

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  250. Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate Reviewed

      Vol. 11 ( 3‐4 ) page: 722-725   2014

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  251. Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays Reviewed

      Vol. 53 ( 3 ) page: 30306   2014

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  252. Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Reviewed

      Vol. 16 ( 11 ) page: 2273-2282   2014

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  253. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

      Vol. 11 ( 3‐4 ) page: 393-396   2014

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  254. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy Reviewed

      Vol. 115 ( 9 ) page: 94906   2014

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  255. Novel activation process for Mg-implanted GaN Reviewed

      Vol. 388   page: 112-115   2014

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  256. Recombination dynamics and internal quantum efficiency in InGaN nanowires Reviewed

      Vol. 11 ( 3-4 ) page: 652 - 655   2014

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    DOI: 10.1002/pssc.201300437

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  257. Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate International journal

    Kouhei Yamashita, Tomohiko Sugiyama, Makoto Iwai, Yoshio Honda, Takashi Yoshino, Hiroshi Amano

    LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVIII   Vol. 9003   2014

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    A GaN layer of 20 mu m thickness grown by the liquid-phase epitaxy on c-plane sapphire was used as a template for the growth of blue light-emitting diodes (LEDs) with emission peak wavelengths of about 450 nm. As the underlying layer of the active region, an InGaN/GaN superlattice or two pairs of 100 nm undoped GaN and 20 nm GaN: Si layers on an n-type GaN: Si layer was found to be effective for reducing the forward voltage. By optimizing the multiple-quantumwell structure, LEDs having a 2.5-nm-thick InGaN well and 5-nm-thick GaN barrier exhibited the highest internal quantum efficiency (IQE) at both low and high currents. This IQE was much higher than that of LEDs on a sapphire substrate. The IQE of LEDs using the liquid-phase GaN grown on sapphire substrate exceeded more than 75% at a forward current density of over 200 A/cm(2).

    DOI: 10.1117/12.2038764

    Web of Science

  258. Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique International journal

    Byung Oh Jung, Si-Young Bae, Yoshihiro Kato, Masataka Imura, Dong-Seon Lee, Yoshio Honda, Hiroshi Amano

    CRYSTENGCOMM   Vol. 16 ( 11 ) page: 2273 - 2282   2014

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    In this paper, we demonstrate a scalable process for the precise position-controlled selective growth of GaN nanowire arrays by metalorganic chemical vapor deposition (MOCVD) using a pulsed-mode growth technique. The location, orientation, length, and diameter of each GaN nanowire are controlled via pulsed-mode growth parameters such as growth temperature and precursor injection and interruption durations. The diameter and length of each GaN nanowire are in the ranges of more than 240 nm and 250-1250 nm, respectively, with different vertical-to-lateral aspect ratios that depend on the growth temperature. Also, it is found that a higher growth temperature helps increase the vertical growth rate and reduces the lateral growth rate of GaN nanowire arrays. Furthermore, in the case of longer TMGa injection duration, the Ga-rich region allows the higher lateral growth rate of GaN nanostructures, which leads to a transition in the morphology from nanowires to a thin film, while in the case of longer NH3 injection duration, the surface morphology changes from nanowires to pyramidal structures. In addition, the surface structure can also be controlled by varying the precursor interruption duration. Finally, we report and discuss a growth model for GaN nanowire arrays under pulsed-mode MOCVD growth.

    DOI: 10.1039/c3ce42266f

    Web of Science

  259. Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate Reviewed International journal

      Vol. 11 ( 3-4 ) page: 722 - 725   2014

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    DOI: 10.1002/pssc.201300470

    Web of Science

  260. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

      Vol. 11 ( 3-4 ) page: 393 - 396   2014

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    DOI: 10.1002/pssc.201300670

    Web of Science

  261. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

    Ju, Guangxu, Kato, Yoshihiro, Honda, Yoshio, Tabuchi, Masao, Takeda, Yoshikazu, Amano, Hiroshi

    physica status solidi (c)   Vol. 11 ( 3‐4 ) page: 393-396   2014

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  262. Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate

    Yamashita, Kouhei, Sugiyama, Tomohiko, Iwai, Makoto, Honda, Yoshio, Yoshino, Takashi, Amano, Hiroshi

    SPIE OPTO     page: 90030E-90030E-6   2014

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  263. Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask

    Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 53 ( 5S1 ) page: 05FL01   2014

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  264. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH< sub> 3</sub> interrupted etching

    Son, Ji-Su, Honda, Yoshio, Amano, Hiroshi

    Optics express   Vol. 22 ( 3 ) page: 3585-3592   2014

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  265. Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays

    Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 53 ( 3 ) page: 30306   2014

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  266. Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate

    Okuno, Koji, Oshio, Takahide, Shibata, Naoki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    physica status solidi (c)   Vol. 11 ( 3‐4 ) page: 722-725   2014

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  267. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy

    Ju, Guangxu, Honda, Yoshio, Tabuchi, Masao, Takeda, Yoshikazu, Amano, Hiroshi

    Journal of Applied Physics   Vol. 115 ( 9 ) page: 94906   2014

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  268. Novel activation process for Mg-implanted GaN

    Hashimoto, Shin, Nakamura, Takao, Honda, Yoshio, Amano, Hiroshi

    Journal of Crystal Growth   Vol. 388   page: 112-115   2014

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  269. Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique

    Jung, Byung Oh, Bae, Si-Young, Kato, Yoshihiro, Imura, Masataka, Lee, Dong-Seon, Honda, Yoshio, Amano, Hiroshi

    CrystEngComm   Vol. 16 ( 11 ) page: 2273-2282   2014

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  270. MOVPE法によるGaN及びAlGaNへのCドーピングに関する研究 (レーザ・量子エレクトロニクス) Reviewed

    若杉 侑矢, 本田 善央, 天野 浩

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 331 ) page: 47 - 50   2013.11

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    MOVPE法を用いてGaN及びAlGaNへのMgとCの同時ドーピングを行い、電気的、光学的特性を評価した。GaNへの同時ドーピングでは比較的低濃度のCドーピングにより正孔密度の増加が確認できたが、AlGaNにおいてはC_2H_2流量増加に伴い正孔密度は減少した。cathodeluminescence(CL)測定により、全ての試料で440nm付近の発光を確認した。GaNへのMgとCのδドーピングを行った試料に対して同様の測定を行った。MgとCの同時δドーピングは通常のMgドーピングよりも高い正孔密度を示した。

  271. 高輝度電子ビーム源を目指したNEA表面p-GaNの量子効率 (電子部品・材料) Reviewed

    前川 拓也, 本田 善央, 天野 浩, 西谷 智博

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 330 ) page: 43 - 46   2013.11

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    我々は、負の電子親和力を持つ半導体表面を用いた電子源(NEA半導体フォトカソード電子源)の高輝度、高耐久化を目指して、p-GaN半導体を用いた機能性表面の寿命に対する電子源の高輝度条件を検討した。超高真空中でp-GaN基板に対してNEA表面活性化を行った後、その量子効率の波長依存性及びその寿命の測定実験を行った。その結果から、p-GaN基板は、従来技術のp-GaAs基板に比べて20倍以上寿命が長く、より高耐久性能を持つことが分かった。また、表面機能が低下するに連れて、バンドギャップエネルギー以下の励起エネルギーでの量子効率が優先的に減少することが分かった。これらの結果より、p-GaN基板を用いたNEA半導体フォトカソード電子源は、高耐久である一方で、表面機能が劣化した状態がより電子ビーム源として単色化に適していることを明らかにした。

  272. 高輝度電子ビーム源を目指したNEA表面p-GaNの量子効率 (電子デバイス) Reviewed

    前川 拓也, 本田 善央, 天野 浩, 西谷 智博

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 329 ) page: 43 - 46   2013.11

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    我々は、負の電子親和力を持つ半導体表面を用いた電子源(NEA半導体フォトカソード電子源)の高輝度、高耐久化を目指して、p-GaN半導体を用いた機能性表面の寿命に対する電子源の高輝度条件を検討した。超高真空中でp-GaN基板に対してNEA表面活性化を行った後、その量子効率の波長依存性及びその寿命の測定実験を行った。その結果から、p-GaN基板は、従来技術のp-GaAs基板に比べて20倍以上寿命が長く、より高耐久性能を持つことが分かった。また、表面機能が低下するに連れて、バンドギャップエネルギー以下の励起エネルギーでの量子効率が優先的に減少することが分かった。これらの結果より、p-GaN基板を用いたNEA半導体フォトカソード電子源は、高耐久である一方で、表面機能が劣化した状態がより電子ビーム源として単色化に適していることを明らかにした。

  273. 高輝度電子ビーム源を目指したNEA表面p-GaNの量子効率 (レーザ・量子エレクトロニクス) Reviewed

    前川 拓也, 本田 善央, 天野 浩, 西谷 智博

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 331 ) page: 43 - 46   2013.11

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:一般社団法人電子情報通信学会  

    我々は、負の電子親和力を持つ半導体表面を用いた電子源(NEA半導体フォトカソード電子源)の高輝度、高耐久化を目指して、p-GaN半導体を用いた機能性表面の寿命に対する電子源の高輝度条件を検討した。超高真空中でp-GaN基板に対してNEA表面活性化を行った後、その量子効率の波長依存性及びその寿命の測定実験を行った。その結果から、p-GaN基板は、従来技術のp-GaAs基板に比べて20倍以上寿命が長く、より高耐久性能を持つことが分かった。また、表面機能が低下するに連れて、バンドギャップエネルギー以下の励起エネルギーでの量子効率が優先的に減少することが分かった。これらの結果より、p-GaN基板を用いたNEA半導体フォトカソード電子源は、高耐久である一方で、表面機能が劣化した状態がより電子ビーム源として単色化に適していることを明らかにした。

  274. MOVPE法によるGaN及びAlGaNへのCドーピングに関する研究 (電子部品・材料) Reviewed

    若杉 侑矢, 本田 善央, 天野 浩

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 330 ) page: 47 - 50   2013.11

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:一般社団法人電子情報通信学会  

    MOVPE法を用いてGaN及びAlGaNへのMgとCの同時ドーピングを行い、電気的、光学的特性を評価した。GaNへの同時ドーピングでは比較的低濃度のCドーピングにより正孔密度の増加が確認できたが、AlGaNにおいてはC_2H_2流量増加に伴い正孔密度は減少した。cathodeluminescence(CL)測定により、全ての試料で440nm付近の発光を確認した。GaNへのMgとCのδドーピングを行った試料に対して同様の測定を行った。MgとCの同時δドーピングは通常のMgドーピングよりも高い正孔密度を示した。

  275. MOVPE法によるGaN及びAlGaNへのCドーピングに関する研究 (電子デバイス) Reviewed

    若杉 侑矢, 本田 善央, 天野 浩

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 329 ) page: 47 - 50   2013.11

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:一般社団法人電子情報通信学会  

    MOVPE法を用いてGaN及びAlGaNへのMgとCの同時ドーピングを行い、電気的、光学的特性を評価した。GaNへの同時ドーピングでは比較的低濃度のCドーピングにより正孔密度の増加が確認できたが、AlGaNにおいてはC_2H_2流量増加に伴い正孔密度は減少した。cathodeluminescence(CL)測定により、全ての試料で440nm付近の発光を確認した。GaNへのMgとCのδドーピングを行った試料に対して同様の測定を行った。MgとCの同時δドーピングは通常のMgドーピングよりも高い正孔密度を示した。

  276. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

    K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, and H. Amano

    phys. stat. sol. (c)   Vol. 10 ( 3 ) page: 369-372   2013.3

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  277. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

    K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, and H. Amano

    phys. stat. sol. (c)   Vol. 10 ( 3 ) page: 369-372   2013.3

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  278. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

    K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, H. Amano

    phys. stat. sol. (c)   Vol. 10 ( 3 ) page: 369-372   2013.3

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  279. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy

    K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, H. Amano

    phys. stat. sol. (c)   Vol. 10 ( 3 ) page: 369-372   2013.3

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  280. Growth of GaN on Si (111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer Reviewed

    Yamada, Takaya; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB16   2013

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  281. Fabrication of InGaN/GaN Multiple Quantum Wells on (1bar 101) GaN Reviewed

    Tanikawa, Tomoyuki; Sano, Tomotaka; Kushimoto, Maki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JC05   2013

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  282. Stacking Faults and Luminescence Property of InGaN Nanowires Reviewed

    Tabata, Takuya; Paek, Jihyun; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JE06   2013

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  283. Effects of nano-and microscale SiO2 masks on the growth of a-plane GaN layers on r-plane sapphire Reviewed

    Son, Ji-Su; Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Seo, Yong Gon; Hwang, Sung-Min; Baik, Kwang Hyeon;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JC04   2013

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  284. Characteristics of< i> a</i>-plane GaN films grown on optimized silicon-dioxide-patterned< i> r</i>-plane sapphire substrates Reviewed

    Son, Ji-Su; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Baik, Kwang Hyeon; Seo, Yong Gon; Hwang, Sung-Min;

    Thin Solid Films   Vol. 546   page: 108-113   2013

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  285. Defects generation and annihilation in GaN grown on patterned silicon substrate Reviewed

    Sawaki, N; Ito, S; Nakagita, T; Iwata, H; Tanikawa, T; Irie, M; Honda, Y; Yamaguchi, M; Amano, H;

    SPIE OPTO     page: 86250K-86250K-6   2013

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  286. High internal quantum efficiency blue-green light-emitting diode with small efficiency droop fabricated on low dislocation density GaN substrate Reviewed

    Sano, Tomotaka; Doi, Tomohiro; Inada, Shunko Albano; Sugiyama, Tomohiko; Honda, Yoshio; Amano, Hiroshi; Yoshino, Takashi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JK09   2013

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  287. Growth mode and threading dislocation behavior of GaN films grown on patterned sapphire substrate with radial stripe pattern Reviewed

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB09   2013

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  288. Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer Reviewed

    Ohata, Toshiya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB11   2013

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  289. GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy Reviewed

    Nakagawa, Shinta; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JE07   2013

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  290. Effects of exciton localization on internal quantum efficiency of InGaN nanowires Reviewed

    Murotani, Hideaki; Yamada, Yoichi; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Journal of Applied Physics   Vol. 114 ( 15 ) page: 153506   2013

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  291. GaN Overgrowth on Thermally Etched Nanoporous GaN Template Reviewed

    Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB03   2013

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  292. Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy Reviewed

    Doi, Tomohiro; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB14   2013

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  293. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN Reviewed

    Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 5R ) page: 50001   2013

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  294. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

    Okuno Koji, Oshio Takahide, Shibata Naoki, Honda Yoshio, Yamaguchi Masahito, Tanaka Shigeyasu, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3   Vol. 10 ( 3 ) page: 369 - 372   2013

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    DOI: 10.1002/pssc.201200587

    Web of Science

  295. Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer

    Ohata, Toshiya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB11   2013

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  296. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN Reviewed

    Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 5R ) page: 50001   2013

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  297. Stacking Faults and Luminescence Property of InGaN Nanowires

    Tabata, Takuya, Paek, Jihyun, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JE06   2013

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  298. Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy

    Doi, Tomohiro, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB14   2013

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  299. Characteristics of< i> a</i>-plane GaN films grown on optimized silicon-dioxide-patterned< i> r</i>-plane sapphire substrates

    Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Baik, Kwang Hyeon, Seo, Yong Gon, Hwang, Sung-Min

    Thin Solid Films   Vol. 546   page: 108-113   2013

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  300. High internal quantum efficiency blue-green light-emitting diode with small efficiency droop fabricated on low dislocation density GaN substrate

    Sano, Tomotaka, Doi, Tomohiro, Inada, Shunko Albano, Sugiyama, Tomohiko, Honda, Yoshio, Amano, Hiroshi, Yoshino, Takashi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JK09   2013

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  301. Growth of GaN on Si (111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer

    Yamada, Takaya, Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB16   2013

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  302. Growth mode and threading dislocation behavior of GaN films grown on patterned sapphire substrate with radial stripe pattern

    Okuno, Koji, Oshio, Takahide, Shibata, Naoki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB09   2013

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  303. GaN Overgrowth on Thermally Etched Nanoporous GaN Template

    Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB03   2013

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  304. GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy

    Nakagawa, Shinta, Tabata, Takuya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JE07   2013

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  305. Fabrication of InGaN/GaN Multiple Quantum Wells on (1bar 101) GaN

    Tanikawa, Tomoyuki, Sano, Tomotaka, Kushimoto, Maki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JC05   2013

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  306. Effects of nano-and microscale SiO2 masks on the growth of a-plane GaN layers on r-plane sapphire

    Son, Ji-Su, Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Seo, Yong Gon, Hwang, Sung-Min, Baik, Kwang Hyeon

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JC04   2013

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  307. Effects of exciton localization on internal quantum efficiency of InGaN nanowires

    Murotani, Hideaki, Yamada, Yoichi, Tabata, Takuya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Journal of Applied Physics   Vol. 114 ( 15 ) page: 153506   2013

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  308. Defects generation and annihilation in GaN grown on patterned silicon substrate

    Sawaki, N, Ito, S, Nakagita, T, Iwata, H, Tanikawa, T, Irie, M, Honda, Y, Yamaguchi, M, Amano, H

    SPIE OPTO     page: 86250K-86250K-6   2013

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  309. Effects of low energy e-beam irradiation on cathodoluminescence from GaN Reviewed

    S. Suihkonen, H. Nykänen, T. Tanikawa, M. Yamaguchi, Y. Honda, and H. Amano

    phys. stat. sol. (a)   Vol. 210 ( 2 ) page: 383-385   2012.12

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  310. Effects of low energy e-beam irradiation on cathodoluminescence from GaN Reviewed

    S. Suihkonen, H. Nykänen, T. Tanikawa, M. Yamaguchi, Y. Honda, H. Amano

    phys. stat. sol. (a)   Vol. 210 ( 2 ) page: 383-385   2012.12

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  311. Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Reviewed

    KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

    IEICE technical report. Electron devices   Vol. 112 ( 32 ) page: 15 - 18   2012.5

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    We grew high-quality semipolar (1-101) GaN stripes on a Si substrate by selective area growth and regrew InGaN/GaN MQW on these stripes with MOVPE. The PL peak wavelength at 300 K and InGaN well thickness for the obtained samples were 435-590 nm and 2-9 nm, respectively. In PL measurements from the surface, we found that a shorter wavelength and thinner well sample have PL polarization perpendicular to the c axis. On the other hand, as the PL wavelength is longer and/or the well is thicker, the PL polarization shifts from perpendicular to parallel. In the PL measurement from the (11 -22) edge surface of the sample with shorter wavelength, we observed the narrowing of PL spectrum. In addition, the parallel component of PL polarization increased with increase in well thickness. Therefore, we can control the direction of polarization by managing well thickness and indium composition and apply to make a LD structure.

  312. Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Reviewed

    KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

      Vol. 112 ( 33 ) page: 15 - 18   2012.5

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  313. Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Reviewed

    KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

    Technical report of IEICE. SDM   Vol. 112 ( 34 ) page: 15 - 18   2012.5

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    We grew high-quality semipolar (1-101) GaN stripes on a Si substrate by selective area growth and regrew InGaN/GaN MQW on these stripes with MOVPE. The PL peak wavelength at 300 K and InGaN well thickness for the obtained samples were 435-590 nm and 2-9 nm, respectively. In PL measurements from the surface, we found that a shorter wavelength and thinner well sample have PL polarization perpendicular to the c axis. On the other hand, as the PL wavelength is longer and/or the well is thicker, the PL polarization shifts from perpendicular to parallel. In the PL measurement from the (11 -22) edge surface of the sample with shorter wavelength, we observed the narrowing of PL spectrum. In addition, the parallel component of PL polarization increased with increase in well thickness. Therefore, we can control the direction of polarization by managing well thickness and indium composition and apply to make a LD structure.

  314. Strain relaxation in thick (1-101)InGaN grown on GaN/Si substrate Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    phys. stat. sol. (b)   Vol. 249 ( 3 ) page: 468–471   2012.3

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  315. Strain relaxation in thick (1-101)InGaN grown on GaN/Si substrate Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

    phys. stat. sol. (b)   Vol. 249 ( 3 ) page: 468–471   2012.3

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  316. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

    T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 646–649   2012.3

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  317. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

    T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 646–649   2012.3

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  318. Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate Reviewed

    T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, and Y. Mori

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 875–878   2012.3

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  319. Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate Reviewed

    T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, Y. Mori

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 875–878   2012.3

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  320. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

    T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 480–483   2012.3

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  321. A local vibration mode in a carbon doped (1-101)AlGaN Reviewed

    N. Sawaki, K. Hagiwara, K. Yamashita, N. Koide, Y. Honda, M. Yamaguchi, and H. Amano

    SPIE   Vol. 8262   page: 82620D   2012.3

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  322. A local vibration mode in a carbon doped (1-101)AlGaN

    N. Sawaki, K. Hagiwara, K. Yamashita, N. Koide, Y. Honda, M. Yamaguchi, H. Amano

    SPIE   Vol. 8262   page: 82620D   2012.3

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  323. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

    T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 480–483   2012.3

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  324. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

    T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 646–649   2012.3

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  325. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE

    T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 646–649   2012.3

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  326. Impurity incorporation in semipolar (1-101) GaN grown on an Si substrate Reviewed

    N. Sawaki, K. Hagiwara, T. Hikosaka, and Y. Honda

    Semicond. Sci. Technol.   Vol. 27   page: 024006_1-024006_5   2012.1

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  327. Impurity incorporation in semipolar (1-101) GaN grown on an Si substrate Reviewed

    N. Sawaki, K. Hagiwara, T. Hikosaka, Y. Honda

    Semicond. Sci. Technol.   Vol. 27   page: 024006_1-024006_5   2012.1

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  328. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

    Tabata Takuya, Paek Jihyun, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   Vol. 9 ( 3-4 ) page: 646 - 649   2012

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    DOI: 10.1002/pssc.201100446

    Web of Science

  329. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

    Mitsunari Tadashi, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   Vol. 9 ( 3-4 ) page: 480 - 483   2012

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    DOI: 10.1002/pssc.201100502

    Web of Science

  330. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

    T. Inazu, S. Fukahori, C. Pernot, M. H. Kim, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 12 ) page: 122101_1-122101_3   2011.12

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  331. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

    T. Inazu, S. Fukahori, C. Pernot, M. H. Kim, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, I. Akasaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 12 ) page: 122101_1-122101_3   2011.12

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  332. Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

    T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, and N. Sawaki

    AIP Conf. Proc.   Vol. 1399   page: 503-504   2011.12

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  333. Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

    T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, and N. Sawaki

    AIP Conf. Proc.   Vol. 1399   page: 503-504   2011.12

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  334. Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

    T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, N. Sawaki

    AIP Conf. Proc.   Vol. 1399   page: 503-504   2011.12

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  335. Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

    T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, N. Sawaki

    AIP Conf. Proc.   Vol. 1399   page: 503-504   2011.12

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  336. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    Kim Myunghee, Fujita Takehiko, Fukahori Shinya, INAZU Tetsuhiko, PERNOT Cyril, NAGASAWA Yosuke, HIRANO Akira, IPPOMMATSU Masamichi, IWAYA Motoaki, TAKEUCHI Tetsuya, KAMIYAMA Satoshi, YAMAGUCHI Masahito, HONDA Yoshio, AMANO Hiroshi, AKASAKI Isamu

    Applied physics express   Vol. 4 ( 9 ) page: "092102 - 1"-"092102-3"   2011.9

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  337. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki

    Appl. Phys. Express   Vol. 4 ( 9 ) page: 092102_1-092102_3   2011.8

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  338. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki

    Appl. Phys. Express   Vol. 4 ( 9 ) page: 092102_1-092102_3   2011.8

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  339. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, I. Akasaki

    Appl. Phys. Express   Vol. 4 ( 9 ) page: 092102_1-092102_3   2011.8

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  340. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, I. Akasaki

    Appl. Phys. Express   Vol. 4 ( 9 ) page: 092102_1-092102_3   2011.8

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  341. (1-101)GaN/Si上InGaN厚膜のMOVPE成長

    TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, SAWAKI Nobuhiko

    IEICE technical report   Vol. 111 ( 44 ) page: 63 - 66   2011.5

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    We demonstrated thick InGaN growth on (1-101)GaN/Si. The grown samples had relative smooth surface with RMS value of less than 10nm. From X-ray reciprocal space mapping, InGaN layer showed incoherent growth. First, the lattice relaxation occurred by generation of misfit dislocations between InGaN/GaN interface and inclined along <0001> projection. At a high indium content, a high density of misfit dislocations was generated, resulted in a larger inclination. Along <11-20> direction, InGaN lattice relaxation only occurred along the in-plane direction.

  342. GaN系HFETsの電流コラプスの測定 : 非極性a面GaN基板上HFET及びc-GaN基板上p-GaNゲートを用いたノーマリーオフ型JHFET

    SUGIYAMA T., HONDA Y., YAMAGUCHI M., AMANO H., ISOBE Y., OSHIMURA Y., IWAYA M., TAKEUCHI T., KAMIYAMA S., AKASAKI I., IMADE M., KITAOKA Y., MORI Y.

    IEICE technical report   Vol. 111 ( 46 ) page: 175 - 178   2011.5

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    We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing a high V_<th> and a small current collapse than c-plane HFETs. We also measured current collapse in normally off mode AlGaN/GaN JHFETs with a p-GaN gate. The large current collapse was observed in unpassivated sample, because AlGaN barrier of JHFETs was exposed to air by dry etching. On the other hand current collapse in the SiNx-passivated JHFETs is small and almost the same as that in as-grown HFETs.

  343. GaN系HFETsの電流コラプスの測定 : 非極性a面GaN基板上HFET及びc-GaN基板上p-GaNゲートを用いたノーマリーオフ型JHFET

    SUGIYAMA T., HONDA Y., YAMAGUCHI M., AMANO H., ISOBE Y., OSHIMURA Y., IWAYA M., TAKEUCHI T., KAMIYAMA S., AKASAKI I., IMADE M., KITAOKA Y., MORI Y.

    IEICE technical report   Vol. 111 ( 45 ) page: 175 - 178   2011.5

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    We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing a high V_<th> and a small current collapse than c-plane HFETs. We also measured current collapse in normally off mode AlGaN/GaN JHFETs with a p-GaN gate. The large current collapse was observed in unpassivated sample, because AlGaN barrier of JHFETs was exposed to air by dry etching. On the other hand current collapse in the SiNx-passivated JHFETs is small and almost the same as that in as-grown HFETs.

  344. GaN系HFETsの電流コラプスの測定 : 非極性a面GaN基板上HFET及びc-GaN基板上p-GaNゲートを用いたノーマリーオフ型JHFET

    杉山 貴之, 本田 善央, 山口 雅史, 天野 浩, 磯部 康裕, 押村 吉徳, 岩谷 素顕, 竹内 哲也, 上山 智, 赤崎 勇, 今出 完, 北岡 康夫, 森 勇介

    電子情報通信学会技術研究報告. ED, 電子デバイス   Vol. 111 ( 44 ) page: 175 - 178   2011.5

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    c面および非極性a面GaN基板上AlGaN/GaN HFETの電流コラプスを測定した。a-HFETはc面上のHFETsに比べ高い閾値電圧と電流コラプス耐性の両立に優れることを実証した。また、p-GaNゲートを用いたc面ノーマリーオフ型JHFETについても電流コラプスの測定を行った、ドライエッチングによって露出されたAlGaN表面のデバイスでは電流コラプスが極めて大きいが、SiNパッシベーションによって、as-grownで同じ組成・膜厚を有するAlGaNバリアのノーマリーオフ型HFETsと同程度まで電流コラプス耐性が向上した。

  345. AlGaN系紫外発光素子の通電特性 : UV-LEDの劣化メカニズム

    朴 貴珍, 杉山 貴之, 谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 稲津 哲彦, 藤田 武彦, ペルノー シリル, 平野 光

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   Vol. 111 ( 46 ) page: 123 - 126   2011.5

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    長時間・大電流駆動によるAlGaN系紫外発光素子の通電特性の変化から発光効率とリーク電流成分の増大の関連性、また、発光層への注入効率とリーク成分の関係性を調べた.劣化初期、通電時間が経つとともにリーク電流は増大、IQEは一定であった.しかし、駆動時間400時間目の結果からIQEの低下が観測された.その原因はリーク電流によるジュール熱であると考えられる.

  346. AlGaN系紫外発光素子の通電特性 : UV-LEDの劣化メカニズム

    朴 貴珍, 杉山 貴之, 谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 稲津 哲彦, 藤田 武彦, ペルノー シリル, 平野 光

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   Vol. 111 ( 45 ) page: 123 - 126   2011.5

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    長時間・大電流駆動によるAlGaN系紫外発光素子の通電特性の変化から発光効率とリーク電流成分の増大の関連性、また、発光層への注入効率とリーク成分の関係性を調べた.劣化初期、通電時間が経つとともにリーク電流は増大、IQEは一定であった.しかし、駆動時間400時間目の結果からIQEの低下が観測された.その原因はリーク電流によるジュール熱であると考えられる.

  347. AlGaN系紫外発光素子の通電特性 : UV-LEDの劣化メカニズム

    朴 貴珍, 杉山 貴之, 谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 稲津 哲彦, 藤田 武彦, ペルノー シリル, 平野 光

    電子情報通信学会技術研究報告. ED, 電子デバイス   Vol. 111 ( 44 ) page: 123 - 126   2011.5

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    長時間・大電流駆動によるAlGaN系紫外発光素子の通電特性の変化から発光効率とリーク電流成分の増大の関連性、また、発光層への注入効率とリーク成分の関係性を調べた.劣化初期、通電時間が経つとともにリーク電流は増大、IQEは一定であった.しかし、駆動時間400時間目の結果からIQEの低下が観測された.その原因はリーク電流によるジュール熱であると考えられる.

  348. (1-101)GaN/Si上InGaN厚膜のMOVPE成長

    谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 澤木 宣彦

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   Vol. 111 ( 46 ) page: 63 - 66   2011.5

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    MOVPE法により(1-101)GaN/Si上にInGaN厚膜の成長を試みた。InGaNを成長するとGaNにみられた原子ステップは消失し、三次元成長が促進されていることを確認したが、c面によくみられるV字ピットは現れず、10nm以下の平均粗さを有する平坦性の比較的優れた結晶であることが分かった。X線逆格子マッピング測定よりInGaN結晶の格子緩和過程を観察すると、2段階の緩和過程が観察された。低In組成ではコヒーレント成長していたのに対し、In組成が増大するにつれまずc軸方向へのチルトが見られた。これは格子不整合により界面にミスフィット転位が導入されることに起因すると思われる。In組成が高くなるについてミスフィット転位の間隔が狭くなりチルト角度が増大した。<11-20>方向においては面内の格子緩和のみ発生した。

  349. (1-101)GaN/Si上InGaN厚膜のMOVPE成長

    谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 澤木 宣彦

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   Vol. 111 ( 45 ) page: 63 - 66   2011.5

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    MOVPE法により(1-101)GaN/Si上にInGaN厚膜の成長を試みた。InGaNを成長するとGaNにみられた原子ステップは消失し、三次元成長が促進されていることを確認したが、c面によくみられるV字ピットは現れず、10nm以下の平均粗さを有する平坦性の比較的優れた結晶であることが分かった。X線逆格子マッピング測定よりInGaN結晶の格子緩和過程を観察すると、2段階の緩和過程が観察された。低In組成ではコヒーレント成長していたのに対し、In組成が増大するにつれまずc軸方向へのチルトが見られた。これは格子不整合により界面にミスフィット転位が導入されることに起因すると思われる。In組成が高くなるについてミスフィット転位の間隔が狭くなりチルト角度が増大した。<11-20>方向においては面内の格子緩和のみ発生した。

  350. RF-MBE法による(111)Si基板上へのInGaNナノワイヤ成長

    田畑 拓也, 白 知鉉, 本田 善央, 山口 雅史, 天野 浩

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   Vol. 111 ( 45 ) page: 45 - 48   2011.5

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    従来のプレーナ型量子井戸構造と比較してInGaNナノワイヤは可視光長波長領域において、より優れた発光特性を示すと予想される。本研究では、RF-MBE法により(111)Si基板上にIn/(In+Ga)フラックス比および成長温度を変化させてInGaNナノワイヤの成長を行った。成長温度を固定した場合、Inフラックス比が大きくなるほどナノワイヤにおけるIn組成の増大とともにフォトルミネッセンス(PL)ピーク波長は長波長側へシフトした。また、成長温度が高くなるにつれて、PLピーク波長は短波長側へシフトし、PL強度は大きくなった。これは成長温度が高くなるにつれてInの脱離が多くなったこと、およびInGaNナノワイヤの結晶性が向上したことが原因として考えられる。しかし、PLスペクトルの温度依存性からInGaNナノワイヤの内部量子効率を見積もると18%程度であった。これはSTEM像において確認された積層欠陥が原因の1つに挙げられる。

  351. RF-MBE法による(111)Si基板上へのInGaNナノワイヤ成長

    田畑 拓也, 白 知鉉, 本田 善央, 山口 雅史, 天野 浩

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   Vol. 111 ( 46 ) page: 45 - 48   2011.5

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    従来のプレーナ型量子井戸構造と比較してInGaNナノワイヤは可視光長波長領域において、より優れた発光特性を示すと予想される。本研究では、RF-MBE法により(111)Si基板上にIn/(In+Ga)フラックス比および成長温度を変化させてInGaNナノワイヤの成長を行った。成長温度を固定した場合、Inフラックス比が大きくなるほどナノワイヤにおけるIn組成の増大とともにフォトルミネッセンス(PL)ピーク波長は長波長側へシフトした。また、成長温度が高くなるにつれて、PLピーク波長は短波長側へシフトし、PL強度は大きくなった。これは成長温度が高くなるにつれてInの脱離が多くなったこと、およびInGaNナノワイヤの結晶性が向上したことが原因として考えられる。しかし、PLスペクトルの温度依存性からInGaNナノワイヤの内部量子効率を見積もると18%程度であった。これはSTEM像において確認された積層欠陥が原因の1つに挙げられる。

  352. RF-MBE法による(111)Si基板上へのInGaNナノワイヤ成長

    田畑 拓也, 白 知鉉, 本田 善央, 山口 雅史, 天野 浩

    電子情報通信学会技術研究報告. ED, 電子デバイス   Vol. 111 ( 44 ) page: 45 - 48   2011.5

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:一般社団法人電子情報通信学会  

    従来のプレーナ型量子井戸構造と比較してInGaNナノワイヤは可視光長波長領域において、より優れた発光特性を示すと予想される。本研究では、RF-MBE法により(111)Si基板上にIn/(In+Ga)フラックス比および成長温度を変化させてInGaNナノワイヤの成長を行った。成長温度を固定した場合、Inフラックス比が大きくなるほどナノワイヤにおけるIn組成の増大とともにフォトルミネッセンス(PL)ピーク波長は長波長側へシフトした。また、成長温度が高くなるにつれて、PLピーク波長は短波長側へシフトし、PL強度は大きくなった。これは成長温度が高くなるにつれてInの脱離が多くなったこと、およびInGaNナノワイヤの結晶性が向上したことが原因として考えられる。しかし、PLスペクトルの温度依存性からInGaNナノワイヤの内部量子効率を見積もると18%程度であった。これはSTEM像において確認された積層欠陥が原因の1つに挙げられる。

  353. Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (a)   Vol. 208 ( 5 ) page: 1175-1178   2011.5

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  354. Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

    C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 318 ( 1 ) page: 500-504   2011.5

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  355. Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (a)   Vol. 208 ( 5 ) page: 1175-1178   2011.5

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  356. Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

    C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 318 ( 1 ) page: 500-504   2011.5

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  357. Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

    phys. stat. sol. (a)   Vol. 208 ( 5 ) page: 1175-1178   2011.5

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  358. Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

    phys. stat. sol. (a)   Vol. 208 ( 5 ) page: 1175-1178   2011.5

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  359. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

    Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano

    Appl. Phys. Lett.   Vol. 98 ( 14 ) page: 141905   2011.4

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  360. Semi-polar GaN LEDs on Si substrate Reviewed

    N. Sawaki and Y. Honda

    SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page: 38-41   2011.4

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  361. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

    Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano

    Appl. Phys. Lett.   Vol. 98 ( 14 ) page: 141905   2011.4

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  362. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

    Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano

    Appl. Phys. Lett.   Vol. 98 ( 14 ) page: 141905   2011.4

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  363. Semi-polar GaN LEDs on Si substrate Reviewed

    N. Sawaki, Y. Honda

    SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page: 38-41   2011.4

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  364. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

    Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano

    Appl. Phys. Lett.   Vol. 98 ( 14 ) page: 141905   2011.4

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  365. Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

    C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 318 ( 1 ) page: 500-504   2011.3

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  366. Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

    C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 318 ( 1 ) page: 500-504   2011.3

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  367. Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

    C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    SPIE   Vol. 7939   page: 79391X   2011.3

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  368. Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

    C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    SPIE   Vol. 7939   page: 79391X   2011.3

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  369. Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

    C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    SPIE   Vol. 7939   page: 79391X   2011.3

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  370. Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

    C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    SPIE   Vol. 7939   page: 79391X   2011.3

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  371. Reduction of Efficiency Droop in Semipolar (1101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

    Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, LI Zhen-Yu, CHANG Wei-Ting, HSU Hung-Wen, KUO Hao-Chung, LU Tien-Chang, WANG Shing-Chung, LIAO Wei-Tsai, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Applied physics express   Vol. 4 ( 1 ) page: "012105 - 1"-"012105-3"   2011.1

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  372. Semi-polar GaN LEDs on Si substrate Reviewed

    N. Sawaki and Y. Honda

    SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page: 38-41   2011.1

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  373. Semi-polar GaN LEDs on Si substrate Reviewed

    N. Sawaki, Y. Honda

    SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page: 38-41   2011.1

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  374. Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

    C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    Appl. Phys. Express   Vol. 4 ( 1 ) page: 01210_1-012105_3   2011.1

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  375. Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

    C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    Appl. Phys. Express   Vol. 4 ( 1 ) page: 01210_1-012105_3   2011.1

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  376. Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

    T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page: 01AD04_1-01AD04_3   2011.1

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  377. Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

    T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page: 01AD04_1-01AD04_3   2011.1

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  378. Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

    C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    Appl. Phys. Express   Vol. 4 ( 1 ) page: 01210_1-012105_3   2011.1

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  379. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

    Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    Appl. Phys. Lett.   Vol. 98 ( 5 ) page: 051902_1-051902_3   2011.1

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  380. Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

    T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page: 01AD04_1-01AD04_3   2011.1

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  381. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

    Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    Appl. Phys. Lett.   Vol. 98 ( 5 ) page: 051902_1-051902_3   2011.1

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  382. Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

    C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    Appl. Phys. Express   Vol. 4 ( 1 ) page: 01210_1-012105_3   2011.1

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  383. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

    Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

    Appl. Phys. Lett.   Vol. 98 ( 5 ) page: 051902_1-051902_3   2011.1

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  384. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

    Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

    Appl. Phys. Lett.   Vol. 98 ( 5 ) page: 051902_1-051902_3   2011.1

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  385. Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

    T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page: 01AD04_1-01AD04_3   2011.1

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  386. Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed

    Sugiyama Takayuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Oshimura Yoshinori, Iida Daisuke, Iwaya Motoaki, Akasaki Isamu

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

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    DOI: 10.1002/pssc.201001081

    Web of Science

  387. Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate Reviewed

    Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

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    DOI: 10.1002/pssc.201000990

    Web of Science

  388. Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes Reviewed

    Tanikawa Tomoyuki, Murase Tasuku, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

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    DOI: 10.1002/pssc.201000995

    Web of Science

  389. Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

    B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 42 ( 10 ) page: 2575-2578   2010.10

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  390. Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

    B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    Physica E   Vol. 42 ( 10 ) page: 2575-2578   2010.10

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  391. Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

    B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    Physica E   Vol. 42 ( 10 ) page: 2575-2578   2010.10

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  392. Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

    B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    Physica E   Vol. 42 ( 10 ) page: 2575-2578   2010.10

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  393. HVPE growth of a -plane GaN on a GaN template (110)Si substrate Reviewed

    T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 7 ( 7-8 ) page: 1760–1763   2010.7

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  394. HVPE growth of a -plane GaN on a GaN template (110)Si substrate Reviewed

    T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 7 ( 7-8 ) page: 1760–1763   2010.7

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  395. 選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製 Reviewed

    TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

    IEICE technical report   Vol. 109 ( 422 ) page: 23 - 28   2010.2

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    We investigated the InGaN/GaN multiple quantum well(MQW)thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

  396. 選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製 Reviewed

    TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

    IEICE technical report   Vol. 109 ( 423 ) page: 23 - 28   2010.2

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    We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

  397. HVPE growth of a-plane GaN on a GaN template (110)Si substrate Reviewed

    Tanikawa Tomoyuki, Suzuki Noriyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8   Vol. 7 ( 7-8 )   2010

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    DOI: 10.1002/pssc.200983563

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  398. Percolation transport in an AlGaN/GaN heterostructure Invited Reviewed

    N. Sawaki, X. X. Han, Y. Honda, and M. Yamaguchi

    Journal of Physics: Conference Series   Vol. 193   page: 012012_1-012012_4   2009.11

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  399. Percolation transport in an AlGaN/GaN heterostructure Invited Reviewed

    N. Sawaki, X. X. Han, Y. Honda, M. Yamaguchi

    Journal of Physics: Conference Series   Vol. 193   page: 012012_1-012012_4   2009.11

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  400. Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates Reviewed

    M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Korean Phys. Soc.   Vol. 54 ( 6 ) page: 2363   2009.6

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  401. Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates Reviewed

    M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Korean Phys. Soc.   Vol. 54 ( 6 ) page: 2363   2009.6

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  402. *DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed

    Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, and B. Monemar

    phys. stat. sol. (c)   Vol. 6 ( S2 ) page: S772   2009.5

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  403. *DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed

    Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, B. Monemar

    phys. stat. sol. (c)   Vol. 6 ( S2 ) page: S772   2009.5

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  404. *Growth and properties of semi-polar GaN on a patterned silicon substrate Reviewed

    N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2867   2009.3

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  405. Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy Reviewed

    M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2914   2009.3

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  406. MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer Reviewed

    M. Irie, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2891   2009.3

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  407. *Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si Reviewed

    T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2879   2009.3

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  408. *HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate Reviewed

    N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2875   2009.3

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  409. *Growth and properties of semi-polar GaN on a patterned silicon substrate Reviewed

    N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, M. Yamaguchi

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2867 - 2867   2009.3

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  410. *Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si Reviewed

    T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2879   2009.3

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  411. *HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate Reviewed

    N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2875   2009.3

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  412. Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy Reviewed

    M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2914   2009.3

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  413. MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer Reviewed

    M. Irie, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2891   2009.3

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  414. Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures Reviewed

    X.X. Han XX, T. Honda, T. Narita, M. Yamaguchi, N. Sawaki, T. Tanaka, Q.X. Guo, and M. Nishio

    J. Phys. D   Vol. 42 ( 4 ) page: 045112-1   2009.1

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  415. Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures Reviewed

    X.X. Han XX, T. Honda, T. Narita, M. Yamaguchi, N. Sawaki, T. Tanaka, Q.X. Guo, M. Nishio

    J. Phys. D   Vol. 42 ( 4 ) page: 045112-1   2009.1

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  416. DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed

    Honda Yoshio, Hikosaka Toshiki, Yamaguchi Masahito, Sawaki Nobuhiko, Pozina Galia, Karlsson Fredrik, Darakchieva Vanya, Paskov Plamen, Monemar Bo

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2   Vol. 6   page: S772 - S775   2009

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    DOI: 10.1002/pssc.200880932

    Web of Science

  417. Time-resolved spectroscopy in an undoped GaN (1-101) Reviewed

    E.H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 1 ) page: 367-369   2008

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  418. Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE Reviewed

    T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 9 ) page: 2966-2968   2008

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  419. *Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates Reviewed

    T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 6 ) page: 2234?2237   2008

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  420. Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN Reviewed

    J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 6 ) page: 1746?1749   2008

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  421. Time-resolved spectroscopy in an undoped GaN (1-101) Reviewed

    E.H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 1 ) page: 367-369   2008

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  422. *Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates Reviewed

    T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 6 ) page: 2234?2237   2008

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  423. Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN Reviewed

    J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 6 ) page: 1746?1749   2008

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  424. Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE Reviewed

    T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 9 ) page: 2966-2968   2008

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  425. Si基板上でのGaNマイクロファセット上へのInGaN/GaN選択MOVPE成長 Reviewed

    中島 由樹, 本田 善央, 山口 雅史, 澤木 宣彦

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   Vol. 107 ( 252 ) page: 97 - 102   2007.10

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    選択MOVPE法により(111)Si基板上に作製された(0001)面と(1-101)面からなるGaN台形ストライプ構造上にInGaN/GaNヘテロ構造のMOVPE成長を試みた。InGaN混晶薄膜の膜厚は各々のファセット面上で一様でなく、顕著なリッジ成長が見られた。CLスペクトルから組成均一性を評価したところ、(0001)面上ではスペクトルの中央値(ピーク値)は面上で一様であったが、リッジ部でスペクトル半値幅が増加し組成揺らぎが増強されることが分かった。これらの結果は気相中あるいはファセット表面上での化学種の拡散現象だけでは説明できなかった。

  426. Si基板上でのGaNマイクロファセット上へのInGaN/GaN選択MOVPE成長 Reviewed

    中島 由樹, 本田 善央, 山口 雅史, 澤木 宣彦

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   Vol. 107 ( 253 ) page: 97 - 102   2007.10

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    選択MOVPE法により(111)Si基板上に作製された(0001)面と(1-101)面からなるGaN台形ストライプ構造上にInGaN/GaNヘテロ構造のMOVPE成長を試みた。InGaN混晶薄膜の膜厚は各々のファセット面上で一様でなく、顕著なリッジ成長が見られた。CLスペクトルから組成均一性を評価したところ、(0001)面上ではスペクトルの中央値(ピーク値)は面上で一様であったが、リッジ部でスペクトル半値幅が増加し組成揺らぎが増強されることが分かった。これらの結果は気相中あるいはファセット表面上での化学種の拡散現象だけでは説明できなかった。

  427. Si基板上でのGaNマイクロファセット上へのInGaN/GaN選択MOVPE成長 Reviewed

    中島 由樹, 本田 善央, 山口 雅史, 澤木 宣彦

    電子情報通信学会技術研究報告. ED, 電子デバイス   Vol. 107 ( 251 ) page: 97 - 102   2007.10

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    選択MOVPE法により(111)Si基板上に作製された(0001)面と(1-101)面からなるGaN台形ストライプ構造上にInGaN/GaNヘテロ構造のMOVPE成長を試みた。InGaN混晶薄膜の膜厚は各々のファセット面上で一様でなく、顕著なリッジ成長が見られた。CLスペクトルから組成均一性を評価したところ、(0001)面上ではスペクトルの中央値(ピーク値)は面上で一様であったが、リッジ部でスペクトル半値幅が増加し組成揺らぎが増強されることが分かった。これらの結果は気相中あるいはファセット表面上での化学種の拡散現象だけでは説明できなかった。

  428. Fabrication of SAG-AlGaN/InGaN/AlGaN LEDs by mixed-source HVPE with multi-sliding boat system Reviewed

    K. H. Kim, K. S. Jang, S. L. Hwang, H. S. Jeon, W. J. Choi, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 29?32   2007

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  429. Acceptor Level due to Carbon in a (1?101)AlGaN Reviewed

    N. Sawaki, N. Koide, T. Hikosaka, Y. Honda, and M. Yamaguchi

    AIP Conf. Proc.   Vol. 893   page: 281-282   2007

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  430. Al doping in (1?101) GaN films grown on patterned (001) Si substrate Reviewed

    T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Appl. Phys.   Vol. 101 ( 10 ) page: 103513-1-103513-5   2007

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  431. MOVPE growth and cathodoluminescence properties of GAN microcrystal co-doped with Zn and Si Reviewed

    Y. Honda, Y. Yanase, M. Tsuji, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 300 ( 1 ) page: 110-113   2007

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  432. Mg doping in (1-101)GaN grown on a 7o off-axis (001)Si substrate by selective MOVPE Reviewed

    T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 298   page: 207-210   2007

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  433. Transport properties of the two-dimensional electron gas in AlxGa1?xN/GaN heterostructures Reviewed

    X. Han, Y. Honda, T. Narita, M. Yamaguchi and N. Sawaki

    J. Phys.: Condens. Matter   Vol. 19 ( 4 ) page: 046204_1-046204_11   2007

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  434. Characterization of AlGaN, Te-doped GaN and Mg-doped GaN grown by hydride vapor phase epitaxy Reviewed

    K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, H. S. Ahn, M. Yang, W. J. Choi, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 133?136   2007

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  435. Growth of InGaN layer on GaN templated Al2O3 (0001) and Si (111) substrates by mixed-source HVPE Reviewed

    S. L. Hwang, K. S. Jang, K. H. Kim, H. S. Jeon, H. S. Ahn, M. Yang, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 125?128   2007

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  436. Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate Reviewed

    E.H. Kim, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2838-2841   2007

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  437. Electron-Beam-Induced-Current Investigation of GaN/AlGaN/Si Heterostructures Using Scanning Transmission Electron Microscopy Reviewed

    S. Tanaka, K. Aoyama, M. Ichihashi, S. Arai, Y. Honda, and N. Sawaki

    J. Electron Microsc.   Vol. 56 ( 4 ) page: 141-144   2007

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  438. Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure Reviewed

    S. Tanaka, A. Naito, Y. Honda, N. Sawaki, and M. Ichihashi

    J. Electron Microsc.   Vol. 56 ( 2 ) page: 37-42   2007

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  439. Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te-doped AlGaN cladding layer grown by mixed-source HVPE Reviewed

    K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, S. H. Jang, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2240-2243   2007

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  440. Subband structure and transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures Reviewed

    X. Han, Y. Honda, T. Narita, M. Yamaguchi and N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2334-2337   2007

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  441. The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2506-2509   2007

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  442. Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE Reviewed

    Y. Honda, S. Kato, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2740-2743   2007

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  443. Transport properties of the two-dimensional electron gas in AlxGa1?xN/GaN heterostructures Reviewed

    X. Han, Y. Honda, T. Narita, M. Yamaguchi, N. Sawaki

    J. Phys.: Condens. Matter   Vol. 19 ( 4 ) page: 046204_1-046204_11   2007

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    Language:English   Publishing type:Research paper (scientific journal)  

  444. Acceptor Level due to Carbon in a (1?101)AlGaN Reviewed

    N. Sawaki, N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi

    AIP Conf. Proc.   Vol. 893   page: 281-282   2007

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  445. Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE Reviewed

    Y. Honda, S. Kato, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2740-2743   2007

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  446. Subband structure and transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures Reviewed

    X. Han, Y. Honda, T. Narita, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2334-2337   2007

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    Language:English   Publishing type:Research paper (scientific journal)  

  447. The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2506-2509   2007

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    Language:English   Publishing type:Research paper (scientific journal)  

  448. Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate Reviewed

    E.H. Kim, T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2838-2841   2007

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    Language:English   Publishing type:Research paper (scientific journal)  

  449. Al doping in (1?101) GaN films grown on patterned (001) Si substrate Reviewed

    T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Appl. Phys.   Vol. 101 ( 10 ) page: 103513-1-103513-5   2007

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    Language:English   Publishing type:Research paper (scientific journal)  

  450. Growth of InGaN layer on GaN templated Al2O3 (0001) and Si (111) substrates by mixed-source HVPE Reviewed

    S. L. Hwang, K. S. Jang, K. H. Kim, H. S. Jeon, H. S. Ahn, M. Yang, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 125?128   2007

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    Language:English   Publishing type:Research paper (scientific journal)  

  451. Fabrication of SAG-AlGaN/InGaN/AlGaN LEDs by mixed-source HVPE with multi-sliding boat system Reviewed

    K. H. Kim, K. S. Jang, S. L. Hwang, H. S. Jeon, W. J. Choi, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 29?32   2007

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  452. Electron-Beam-Induced-Current Investigation of GaN/AlGaN/Si Heterostructures Using Scanning Transmission Electron Microscopy Reviewed

    S. Tanaka, K. Aoyama, M. Ichihashi, S. Arai, Y. Honda, N. Sawaki

    J. Electron Microsc.   Vol. 56 ( 4 ) page: 141-144   2007

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    Language:English   Publishing type:Research paper (scientific journal)  

  453. Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te-doped AlGaN cladding layer grown by mixed-source HVPE Reviewed

    K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, S. H. Jang, S. M. Lee, M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2240-2243   2007

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  454. Characterization of AlGaN, Te-doped GaN and Mg-doped GaN grown by hydride vapor phase epitaxy Reviewed

    K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, H. S. Ahn, M. Yang, W. J. Choi, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 133?136   2007

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  455. Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure Reviewed

    S. Tanaka, A. Naito, Y. Honda, N. Sawaki, M. Ichihashi

    J. Electron Microsc.   Vol. 56 ( 2 ) page: 37-42   2007

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    Language:English   Publishing type:Research paper (scientific journal)  

  456. Mg doping in (1-101)GaN grown on a 7o off-axis (001)Si substrate by selective MOVPE Reviewed

    T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 298   page: 207-210   2007

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    Language:English   Publishing type:Research paper (scientific journal)  

  457. MOVPE growth and cathodoluminescence properties of GAN microcrystal co-doped with Zn and Si Reviewed

    Y. Honda, Y. Yanase, M. Tsuji, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 300 ( 1 ) page: 110-113   2007

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  458. Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE Reviewed

    K. H. Kim, H. S. Ahn, M. Yang, K. S. Jang, S. L. Hwang, W. J. Choi, C. R. Cho, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1461?1465   2006

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  459. Carbon Incorporation on (1-101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy Reviewed

    N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 45 ( 10A ) page: 7655-7660   2006

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  460. Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure Reviewed

    H. Kondo, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 45 ( 5A ) page: 4015?4017   2006

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  461. Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate Reviewed

    E. H. Kim, T. Hikosaka, T. Narita, Y. Honda, N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1992?1996   2006

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  462. p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE Reviewed

    T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1425?1428   2006

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  463. Cathodoluminescence properties of InGaN codoped with Zn and Si Reviewed

    Y. Honda, Y. Yanase, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1915?1918   2006

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  464. The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (b)   Vol. 243 ( 7 ) page: 1665?1668   2006

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  465. The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (b)   Vol. 243 ( 7 ) page: 1665?1668 - 1668   2006

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  466. Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate Reviewed

    E. H. Kim, T. Hikosaka, T. Narita, Y. Honda, N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1992?1996   2006

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  467. p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE Reviewed

    T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1425?1428   2006

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  468. Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure Reviewed

    H. Kondo, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 45 ( 5A ) page: 4015?4017   2006

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  469. Carbon Incorporation on (1-101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy Reviewed

    N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 45 ( 10A ) page: 7655-7660   2006

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  470. Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE Reviewed

    K. H. Kim, H. S. Ahn, M. Yang, K. S. Jang, S. L. Hwang, W. J. Choi, C. R. Cho, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1461?1465   2006

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  471. Cathodoluminescence properties of InGaN codoped with Zn and Si Reviewed

    Y. Honda, Y. Yanase, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1915?1918   2006

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  472. The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

    HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 105 ( 90 ) page: 69 - 74   2005.5

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    Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

  473. The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

    HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Component parts and materials   Vol. 105 ( 92 ) page: 69 - 74   2005.5

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    Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

  474. Uniform growth of GaN on AlN templated (111)Si substrate by HVPE Reviewed

    Y. Honda, M. Okano, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 2 ( 7 ) page: 2125? 2128   2005

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  475. Incorporation of carbon on a (1-101) facet of GaN by MOVPE Reviewed

    N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 284 ( 3-4 ) page: 341?346   2005

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  476. Characterization of AlGaN layer with high Al content grown by mixed-source HVPE Reviewed

    H. S. Ahn, K. H. Kim, M. Yang, J. Y. Yi, H. J. Lee, J. H. Chang, H. S. Kim, S. W. Kim, S. C. Lee, Y Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (a)   Vol. 202 ( 6 ) page: 1048?1052   2005

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  477. Doping in GaN and AlGaN Grown by Mixed-Source Hydride Vapor Phase Epitaxy Reviewed

    J. Y. Yi, Kyoung H. Kim, H. J. Lee, M.?Yang, H. S. Ahn, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, and N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 373-376   2005

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  478. Growth of AlGaN on Al2O3 substrates by Mixed-Source HVPE Reviewed

    K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, S. N. Yi, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, and N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 361-364   2005

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  479. Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE Reviewed

    T. Hikosaka, Y. Honda, N. Koide, M. Yamaguchi, and N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 251-254   2005

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  480. Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy Reviewed

    H.S. Ahn, K.H. Kim, M. Yang, J.Y. Yi, H.J. Lee, C.R. Cho, H.K. Cho, S.W. Kim, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    Appl. Surf. Science   Vol. 243 ( 1-4 ) page: 178-182   2005

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  481. Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 2 ( 7 ) page: 2349?2352   2005

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  482. Characterization of AlGaN layer with high Al content grown by mixed-source HVPE Reviewed

    H. S. Ahn, K. H. Kim, M. Yang, J. Y. Yi, H. J. Lee, J. H. Chang, H. S. Kim, S. W. Kim, S. C. Lee, Y Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (a)   Vol. 202 ( 6 ) page: 1048?1052   2005

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  483. Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy Reviewed

    H.S. Ahn, K.H. Kim, M. Yang, J.Y. Yi, H.J. Lee, C.R. Cho, H.K. Cho, S.W. Kim, T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    Appl. Surf. Science   Vol. 243 ( 1-4 ) page: 178-182   2005

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  484. Growth of AlGaN on Al2O3 substrates by Mixed-Source HVPE Reviewed

    K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, S. N. Yi, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 361-364   2005

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  485. Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE Reviewed

    T. Hikosaka, Y. Honda, N. Koide, M. Yamaguchi, N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 251-254   2005

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  486. Doping in GaN and AlGaN Grown by Mixed-Source Hydride Vapor Phase Epitaxy Reviewed

    J. Y. Yi, Kyoung H. Kim, H. J. Lee, M.?Yang, H. S. Ahn, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 373-376   2005

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  487. Incorporation of carbon on a (1-101) facet of GaN by MOVPE Reviewed

    N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 284 ( 3-4 ) page: 341?346   2005

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  488. Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 2 ( 7 ) page: 2349?2352   2005

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  489. Uniform growth of GaN on AlN templated (111)Si substrate by HVPE Reviewed

    Y. Honda, M. Okano, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 2 ( 7 ) page: 2125? 2128   2005

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  490. Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

    HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

    Technical report of IEICE. SDM   Vol. 104 ( 43 ) page: 17 - 22   2004.5

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    We had grown the GaN/AIN pyramid structure on (111)Si substrate by MOVPE. The non-uniformity of GaN shape was issue to solve. The reason of that was non-uniformity nucleation of AlN intermediate layer. We estimated the uniformity of GaN/AlN pyramid structure with changing the growth time of AlN intermediate layer. In the case of the thin AlN, we got uniform GaN/AlN structure. A thinner film of AlN contribute to the improvement of current-voltage characterization, we think it effective for the field emitting device.

  491. Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

    HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

    IEICE technical report. Component parts and materials   Vol. 104 ( 41 ) page: 17 - 22   2004.5

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    We had grown the GaN/AIN pyramid structure on (111)Si substrate by MOVPE. The non-uniformity of GaN shape was issue to solve. The reason of that was non-uniformity nucleation of AlN intermediate layer. We estimated the uniformity of GaN/AlN pyramid structure with changing the growth time of AlN intermediate layer. In the case of the thin AlN, we got uniform GaN/AlN structure. A thinner film of AlN contribute to the improvement of current-voltage characterization, we think it effective for the field emitting device.

  492. Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

    HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

    IEICE technical report. Electron devices   Vol. 104 ( 39 ) page: 17 - 22   2004.5

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    We had grown the GaN/AIN pyramid structure on (111)Si substrate by MOVPE. The non-uniformity of GaN shape was issue to solve. The reason of that was non-uniformity nucleation of AlN intermediate layer. We estimated the uniformity of GaN/AlN pyramid structure with changing the growth time of AlN intermediate layer. In the case of the thin AlN, we got uniform GaN/AlN structure. A thinner film of AlN contribute to the improvement of current-voltage characterization, we think it effective for the field emitting device.

  493. Photocurrent spectroscopy of a (0001) GaN/AlGaN/(111)Si heterostructure Reviewed

    Y. Kuroiwa, Y. Honda, N. Sawaki

    Physica E   Vol. 21 ( 2-4 ) page: 782-792   2004

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  494. Optical and electrical properties of (1-101)GaN grown on a 7[degree] off-axis (001)Si substrate Reviewed

    T. Hikosaka, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    Appl. Phys. Lett.   Vol. 84 ( 23 ) page: 4717-4719   2004

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  495. Fabrication and optical properties of GaN micro-prism array on an Si substrate Reviewed

    A. Nishioka, Y. Honda, and N. Sawaki

    Proc. of Int. Conf. on Electrical Engineering 2004   Vol. 3-1   page: 297-300   2004

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  496. Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1?101) GaN facet Reviewed

    Eun-Hee Kim, Tetsuo Narita, Yoshio Honda, and Nobuhiko Sawaki

    phys. stat. sol. (c)   Vol. 1 ( 10 ) page: 2512?2515   2004

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  497. Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001)Si substrate by metalorganic vapor phase epitaxy Reviewed

    S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, T. Tanji, and M. Ichihashi

    J. Cryst. Growth   Vol. 260 ( 3-4 ) page: 360-365   2004

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  498. Growth of thick AlGaN by metalorganic-hydride vapor phase epitaxy Reviewed

    K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, C. R. Cho, S. W. Kim, S. C. Lee, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 1 ( 10 ) page: 2474?2477   2004

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  499. Fabrication and optical properties of GaN micro-prism array on an Si substrate Reviewed

    A. Nishioka, Y. Honda, N. Sawaki

    Proc. of Int. Conf. on Electrical Engineering 2004   Vol. 3-1   page: 297-300   2004

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  500. Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1?101) GaN facet Reviewed

    Eun-Hee Kim, Tetsuo Narita, Yoshio Honda, Nobuhiko Sawaki

    phys. stat. sol. (c)   Vol. 1 ( 10 ) page: 2512?2515   2004

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  501. Optical and electrical properties of (1-101)GaN grown on a 7[degree] off-axis (001)Si substrate Reviewed

    T. Hikosaka, T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    Appl. Phys. Lett.   Vol. 84 ( 23 ) page: 4717-4719   2004

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  502. Growth of thick AlGaN by metalorganic-hydride vapor phase epitaxy Reviewed

    K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, C. R. Cho, S. W. Kim, S. C. Lee, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 1 ( 10 ) page: 2474?2477   2004

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  503. Photocurrent spectroscopy of a (0001) GaN/AlGaN/(111)Si heterostructure Reviewed

    Y. Kuroiwa, Y. Honda, N. Sawaki

    Physica E   Vol. 21 ( 2-4 ) page: 782-792   2004

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  504. Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001)Si substrate by metalorganic vapor phase epitaxy Reviewed

    S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, T. Tanji, M. Ichihashi

    J. Cryst. Growth   Vol. 260 ( 3-4 ) page: 360-365   2004

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  505. HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate Reviewed

    Y. Nishimura, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 7 ) page: 2506-2510   2003

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  506. The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth Reviewed

    T. Narita, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 7 ) page: 2154-2158   2003

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  507. The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE Reviewed

    Y. Honda, M. Torikai, T. Nakamura, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 7 ) page: 2043-2046   2003

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  508. Infrared Reflectance in GaN/AlGaN Triangular Stripes Grown on Si(111) Substrates by MOVPE Reviewed

    M. Mizushima, T. Kato, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Kor. Phys. Soc.   Vol. 42 ( Supp. issue 2 ) page: S750-S752   2003

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  509. Photoluminescence Properties of a Self-Doped GaN Layer Grown on Si Substrate Reviewed

    K. H. Kim, H. Kim, M. Yang, H. S. Ahn, S. N. Yi, N. Kameshiro, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Kor. Phys. Soc.   Vol. 42 ( Supp. issue 2 ) page: S219-S221   2003

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  510. Optical Characteristics of the AlGaN/GaN/AlGaN Waveguide Grown on (111) Si Substrate Reviewed

    H. Kim, K. H. Kim, M. Yang, H. S. Ahn, S. N. Yi, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Kor. Phys. Soc.   Vol. 42   page: S622-S624   2003

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  511. HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate Reviewed

    Y. Nishimura, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 7 ) page: 2506-2510   2003

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  512. Optical Characteristics of the AlGaN/GaN/AlGaN Waveguide Grown on (111) Si Substrate Reviewed

    H. Kim, K. H. Kim, M. Yang, H. S. Ahn, S. N. Yi, T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Kor. Phys. Soc.   Vol. 42   page: S622-S624   2003

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  513. Infrared Reflectance in GaN/AlGaN Triangular Stripes Grown on Si(111) Substrates by MOVPE Reviewed

    M. Mizushima, T. Kato, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Kor. Phys. Soc.   Vol. 42 ( Supp. issue 2 ) page: S750-S752   2003

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  514. Photoluminescence Properties of a Self-Doped GaN Layer Grown on Si Substrate Reviewed

    K. H. Kim, H. Kim, M. Yang, H. S. Ahn, S. N. Yi, N. Kameshiro, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Kor. Phys. Soc.   Vol. 42 ( Supp. issue 2 ) page: S219-S221   2003

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  515. The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth Reviewed

    T. Narita, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 7 ) page: 2154-2158   2003

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  516. The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE Reviewed

    Y. Honda, M. Torikai, T. Nakamura, Y. Kuroiwa, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 7 ) page: 2043-2046   2003

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  517. Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate Reviewed

    Tanaka Shigeyasu, Honda Yoshio, Kameshiro Norifumi, IWASAKI Ryuta, SAWAKI Nobuhiko, TANJI Takayoshi

    Japanese journal of applied physics. Pt. 2, Letters   Vol. 41 ( 7 ) page: L846 - L848   2002.7

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  518. Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate Reviewed

    NARITA Tetsuo, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 102 ( 114 ) page: 25 - 28   2002.6

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    A trapezoidal stripe structure and GaN/AlGaN heterostructure were fabricated on a (111)Si substrate by selective area metalorganic vapor phaseepitaxy(SAG-MOVPE). The stripe was made of (11^^-01) side facets and (0001) face at the top. The cathode luminescence spectra at 4.0K exhibited several DAP emission from the AlGaN alloy. It was shown that the optical spectra depend on the thickness of the film on the facets. This suggests that the strain at the heterointerface modifies the growth mode on the facet.

  519. Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate Reviewed

    NARITA Tetsuo, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. LQE   Vol. 102 ( 117 ) page: 25 - 28   2002.6

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    A trapezoidal stripe structure and GaN/AlGaN heterostructure were fabricated on a (111)Si substrate by selective area metalorganic vapor phaseepitaxy(SAG-MOVPE). The stripe was made of (1101) side facets and (0001) face at the top. The cathode luminescence spectra at 4.0K exhibited several DAP emission from the AlGaN alloy. It was shown that the optical spectra depend on the thickness of the film on the facets. This suggests that the strain at the heterointerface modifies the growth mode on the facet.

  520. Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE Reviewed

    TORIKAI Masayuki, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. LQE   Vol. 102 ( 117 ) page: 21 - 24   2002.6

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    MOVPE growth of a GaN/Al_xGa_1-xN hexagonal pyramid array was attempted on a (111)Si substrate. On a truncated GaN pyramidal structure, an Al_xGa_1-xN film was deposited. It was found that the Al composition is a strong function of the position on the facets. At the top of the pyramid, it was higher than that at the bottom. The phenomenon is attributed to the different diffusion coefficients of Al and Ga chemical species on the surface. In case of the AlN film, the CL spectrum at 4.2 K for the C-surface exhibited a strong peak 218nm. However, we found an array of pits of which structure reflecting the hexagonal structure of the facet.

  521. Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE Reviewed

    TORIKAI Masayuki, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 102 ( 114 ) page: 21 - 24   2002.6

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    MOVPE growth of a GaN/Al_xGa_<1-x>N hexagonal pyramid array was attempted on a (111)Si substrate. On a truncated GaN pyramidal structure, an Al_xGa_<1-x> film was deposited. It was found that the Al composition is a strong function of the position on the facets. At the top of the pyramid, it was higher than that at the bottom. The phenomenon is attributed to the different diffusion coefficients of Al and Ga chemical species on the surface. In case of the AIN film, the CL spectrum at 4.2 K for the C-surface exhibited a strong peak 218nm. However, we found an array of pits of which structure reflecting the hexagonal structure of the facet.

  522. Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate Reviewed

    KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Component parts and materials   Vol. 102 ( 78 ) page: 27 - 31   2002.5

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    The GaN grown on a (111) Silicon substrate has, usually, many cracks because of the large mismatch of the thermal expansion coefficients. We have proposed a method to reduce the strain due to this large mismatch by inclining the C-axis. On a 7 degrees off axis (001) Silicon substrate (111) facets are made by anisotropic etching in KOH solution. On this facet we grew GaN selectively, of which (1-101) surface is parallel to the Silicon substrate. Moreover, we fabricated AlGaN/GaN heterostructures on the (1-101) GaN.

  523. Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate Reviewed

    KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 102 ( 76 ) page: 27 - 31   2002.5

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    The GaN grown on a (111) Silicon substrate has, usually, many cracks because of the large mismatch of the thermal expansion coefficients. We have proposed a method to reduce the strain due to this large mismatch by inclining the C-axis. On a 7 degrees off axis (001) Silicon substrate (111) facets are made by anisotropic etching in KOH solution. On this facet we grew GaN selectively, of which (1-101) surface is parallel to the Silicon substrate. Moreover, we fabricated AlGaN/GaN heterostructures on the (1-101) GaN.

  524. Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate Reviewed

    KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. SDM   Vol. 102 ( 80 ) page: 27 - 31   2002.5

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    The GaN grown on a (111) Silicon substrate has, usually, many cracks because of the large mismatch of the thermal expansion coefficients. We have proposed a method to reduce the strain due to this large mismatch by inclining the C-axis. On a 7 degrees off axis (001) Silicon substrate (111) facets are made by anisotropic etching in KOH solution. On this facet we grew GaN selectively, of which (1-101) surface is parallel to the Silicon substrate. Moreover, we fabricated AlGaN/GaN heterostructures on the (1-101) GaN.

  525. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor- phase epitaxy Reviewed

    KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Component parts and materials   Vol. 102 ( 78 ) page: 15 - 19   2002.5

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    The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO_2 grid mask pattern. Though rigde growth arose at egde region of the mask, GaN films free from cracks were achived. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcsec and that of the band edge emission of photoluminescence at 77K was 18.6 meV. I-V characteristics of a GaN/AlGaN/Si diode shows low resistance ohmic behavior, and The photocurrent spectra show existence of an amorphous Si layer at AlGaN/Si interface.

  526. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy Reviewed

    KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 102 ( 76 ) page: 15 - 19   2002.5

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    The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO_2 grid mask pattern. Though rigde growth arose at egde region of the mask, GaN films free from cracks were achived. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcsec and that of the band edge emission of photoluminescence at 77K was 18.6 meV. I-V characteristics of a GaN/AlGaN/Si diode shows low resistance ohmic behavior, and The photocurrent spectra show existence of an amorphous Si layer at AlGaN/Si interface.

  527. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy Reviewed

    KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. SDM   Vol. 102 ( 80 ) page: 15 - 19   2002.5

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO_2 grid mask pattern. Though rigde growth arose at egde region of the mask, GaN films free from cracks were achived. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcsec and that of the band edge emission of photoluminescence at 77K was 18.6 meV. I-V characteristics of a GaN/AlGaN/Si diode shows low resistance ohmic behavior, and The photocurrent spectra show existence of an amorphous Si layer at AlGaN/Si interface.

  528. Growth of GaN free from cracks on a (111) Si substrate by selective metalorganic vapor-phase epitaxy Reviewed

    Y. Honda, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki

    Appl. Phys. Lett   Vol. 80 ( 2 ) page: 222-224   2002

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  529. Transmission electron microscopy study of the microstructure in selective-area-grown GaN and an AlGaN/GaN heterostructure on a 7-degree off-oriented (001) Si substrate Reviewed

    S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, and T. Tanji

    Jpn. J. Appl. Phys.   Vol. 41 ( 7B ) page: L846-L848   2002

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  530. HVPE Growth of GaN on a GaN Templated (111) Si Substrate Reviewed

    Y. Honda, T. Ishikawa, Y. Nishimura, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 1 ) page: 107-111   2002

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  531. Fabrication of GaN/AlGaN MQW on (1-101) facet of wurtzite GaN grown on a (111) Si substrate by selective MOVPE Reviewed

    T. Kato, Y. Honda, M. Yamaguchi, N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 170   page: 789-794   2002

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  532. Growth of (1-101) GaN on a 7-degree off-oriented (001) Si substrate by selective MOVPE Reviewed

    Y. Honda, N. Kameshiro, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 242 ( 1-2 ) page: 82-86   2002

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  533. Growth of GaN crystal free from cracks on a (111) Si substrate by selective MOVPE Reviewed

    Y. Honda, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 242 ( 1-2 ) page: 77-81   2002

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  534. Fabrication of GaN/AlGaN heterostructures on a (111) Si substrate by selective MOVPE Reviewed

    T. Kato, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 237-239 ( 2 ) page: 1099-1103   2002

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  535. Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate. Reviewed

    Tanaka Shigeyasu, Honda Yoshio, Kameshiro Norifumi, Iwasaki Ryuta, Sawaki Nobuhiko, Tanji Takayoshi

    Japanese Journal of Applied Physics   Vol. 41 ( 7 ) page: L846 - L848   2002

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    DOI: 10.1143/JJAP.41.L846

  536. Fabrication of GaN/AlGaN heterostructures on a (111) Si substrate by selective MOVPE Reviewed

    T. Kato, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 237-239 ( 2 ) page: 1099-1103   2002

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  537. HVPE Growth of GaN on a GaN Templated (111) Si Substrate Reviewed

    Y. Honda, T. Ishikawa, Y. Nishimura, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 1 ) page: 107-111   2002

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  538. Growth of GaN free from cracks on a (111) Si substrate by selective metalorganic vapor-phase epitaxy Reviewed

    Y. Honda, Y. Kuroiwa, M. Yamaguchi, N. Sawaki

    Appl. Phys. Lett   Vol. 80 ( 2 ) page: 222-224   2002

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  539. Growth of GaN crystal free from cracks on a (111) Si substrate by selective MOVPE Reviewed

    Y. Honda, Y. Kuroiwa, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 242 ( 1-2 ) page: 77-81   2002

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  540. Growth of (1-101) GaN on a 7-degree off-oriented (001) Si substrate by selective MOVPE Reviewed

    Y. Honda, N. Kameshiro, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 242 ( 1-2 ) page: 82-86   2002

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  541. Fabrication of GaN/AlGaN MQW on (1-101) facet of wurtzite GaN grown on a (111) Si substrate by selective MOVPE Reviewed

    T. Kato, Y. Honda, M. Yamaguchi, N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 170   page: 789-794   2002

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  542. Transmission electron microscopy study of the microstructure in selective-area-grown GaN and an AlGaN/GaN heterostructure on a 7-degree off-oriented (001) Si substrate Reviewed

    S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, T. Tanji

    Jpn. J. Appl. Phys.   Vol. 41 ( 7B ) page: L846-L848   2002

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  543. Fabrication of GaN dots array on Si substrate by selective area growth method Reviewed

    YAMAGUCHI Masahito, HONDA Yoshio, SAWAKI Nobuhiko

    Technical report of IEICE. SDM   Vol. 100 ( 643 ) page: 25 - 30   2001.2

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    We have fabricated sub-micron GaN dots array on(111)Si substrate by metal organic vapor phase epitaxy(MOVPE)selective area growth. The SiO_2 mask for the selective area growth was prepared with electron beam lithography system and the circle window diameter of the mask was less than 250 nm. The bottom and top surface size of the fabricated GaN dots was about 250 nm and 50 nm, respectively. In comparison with the GaN dots grown on sapphire substrate, the shape of the facet was found to be clear. The optical properties in the GaN dot on Si substrate are relatively good. Therefore, the(111)Si substrate is suitable for the fabrication of the GaN quantum dots.

  544. Selective growth of GaN/AlGaN microstructures by metalorganic vapor phase epitaxy Reviewed

    T. Kato, Y. Honda, Y. Kawaguchi, M. Yamaguchi, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 40 ( 3B ) page: 1896-1898   2001

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  545. Structural characterization of GaN laterally overgrown on a (111)Si substrate Reviewed

    S. Tanaka, Y. Honda, N. Sawaki, and M. Hibino

    Appl. Phys. Lett   Vol. 79 ( 7 ) page: 955-957   2001

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  546. Selective area growth of GaN microstructures on petterned (111) and (001) Si substrate Reviewed

    Y. Honda, Y. Kawaguchi, Y. Ohtake, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 230 ( 3-4 ) page: 346-350   2001

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  547. Selective area growth of GaN microstructures on petterned (111) and (001) Si substrate Reviewed

    Y. Honda, Y. Kawaguchi, Y. Ohtake, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 230 ( 3-4 ) page: 346-350   2001

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  548. Structural characterization of GaN laterally overgrown on a (111)Si substrate Reviewed

    S. Tanaka, Y. Honda, N. Sawaki, M. Hibino

    Appl. Phys. Lett   Vol. 79 ( 7 ) page: 955-957   2001

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  549. Selective growth of GaN/AlGaN microstructures by metalorganic vapor phase epitaxy Reviewed

    T. Kato, Y. Honda, Y. Kawaguchi, M. Yamaguchi, N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 40 ( 3B ) page: 1896-1898   2001

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  550. Fabrication of GaN micro-structures on (111) Si by selective area growth by MOVPE Reviewed

    HONDA Y., OHTAKE Y., KAWAGUCHI Y., YAMAGUCHI M., SAWAKI N.

    IEICE technical report. Electron devices   Vol. 99 ( 616 ) page: 21 - 28   2000.2

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    Selective area growth(SAG)of stripe structure and hexagonal pyramids of GaN on a(111)Si substrate is studied with AlGaN intermediate layer. The crystalinity is much improved by the SAG as compared to that due to a conventional method. It is demonstrated that the formation process of the intermediate layer is the key issue to improve the optical properties as well as the crystalinity.

  551. Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE Reviewed

    Y. Honda, Y. Kawaguchi, T. Kato, M. Yamaguchi, and N. Sawaki

    IPAP Conf. Series   Vol. 1   page: 304-307   2000

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  552. Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE Reviewed

    Y. Honda, Y. Kawaguchi, T. Kato, M. Yamaguchi, N. Sawaki

    IPAP Conf. Series   Vol. 1   page: 304-307   2000

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  553. Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy Reviewed

    Y. Kawaguchi, Y. Honda, M. Yamaguchi, N. Sawaki, and K. Hiramatsu

    Phys. Stat. Sol. (a)   Vol. 176   page: 553-556   1999

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  554. Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of wurtzite GaN on (111) Si substrate by metalorganic vapor phase epitaxy Reviewed

    Y. Kawaguchi, Y. Honda, M. Yamaguchi, K. Hiramatsu, and N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 162   page: 687-692   1999

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  555. Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of wurtzite GaN on (111) Si substrate by metalorganic vapor phase epitaxy Reviewed

    Y. Kawaguchi, Y. Honda, M. Yamaguchi, K. Hiramatsu, N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 162   page: 687-692   1999

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  556. Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy Reviewed

    Y. Kawaguchi, Y. Honda, M. Yamaguchi, N. Sawaki, K. Hiramatsu

    Phys. Stat. Sol. (a)   Vol. 176   page: 553-556   1999

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  557. Selective area growth of GaN on Si substrate using SiO_2 mask by metalorganic vapor phase epitaxy Reviewed

    Y. Kawaguchi, Y. Honda, H. Matsushima, M. Yamaguchi, K. Hiramatsu, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 37 ( 8B ) page: L966-L969   1998

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  558. Selective area growth of GaN on Si substrate using SiO_2 mask by metalorganic vapor phase epitaxy Reviewed

    Y. Kawaguchi, Y. Honda, H. Matsushima, M. Yamaguchi, K. Hiramatsu, N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 37 ( 8B ) page: L966-L969   1998

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Presentations 89

  1. Photocurrent and Photoluminescence measurements for InGaN Based LED Invited International conference

    Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano

    LEDIA'17 

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    Event date: 2017.4

    Language:English