Nagoya University   Associate professor

2015.10

Nagoya University   Graduate School of Engineering Department of Electrical Engineering and Computer Science

2014.12

Nagoya University   Department of Electrical Engineering and Computer Science

2014.12

名古屋大学大学院   工学研究科電子情報システム専攻   准教授

2014.4 - 2015.9

Nagoya University   Graduate School of Engineering Department of Electrical Engineering and Computer Science Information Devices   Associate professor

2014.4 - 2015.9

名古屋大学大学院   工学研究科電子情報システム専攻   准教授

2014.4 - 2015.9

Chubu University

2013.9 - 2017.3

Chubu University

2013.9 - 2017.3

スウェーデン王国・リンショピン大学   客員研究員

2007.8 - 2008.3

スウェーデン王国・リンショピン大学   客員研究員

2007.8 - 2008.3

名古屋大学大学院   工学研究科電子情報システム専攻   助教授

2007.4 - 2014.3

Nagoya University   Graduate School of Engineering Department of Electrical Engineering and Computer Science   Assistant Professor

2007.4 - 2014.3

名古屋大学大学院   工学研究科電子情報システム専攻   助教

2007.4 - 2014.3

Nagoya University   Graduate School of Engineering Department of Electrical Engineering and Computer Science   Assistant

2007.3

名古屋大学大学院   工学研究科電子情報システム専攻   助教授

2003.4 - 2007.3

名古屋大学大学院   工学研究科電子情報システム専攻   助手

2003.4 - 2007.3

名古屋大学大学院   工学研究科電子情報システム専攻   助手

2003.4 - 2007.3

LEDIA18   庶務委員  

2018.4 - 2019.3   

ICMOVPE2018   財務委員  

2017.4 - 2018.12   

ISPLASMA2018   プログラム委員  

2017.4 - 2018.3   

LEDIA18   プログラム委員  

2017.4 - 2018.3   

  庶務委員  

2016.8 - 2019.3   

  庶務委員  

2016.6 - 2017.5   

  プログラム委員  

2016.4 - 2017.3   

IWUMD2017   副実行委員長  

2016.4 - 2017.3   

ISPLASMA2015   実行委員  

2015.4 - 2016.3   

ISGN-6   総務幹事  

2014.7 - 2016.3   

LEDIA15   総務委員  

2014.4 - 2015.3   

学振162委員会   研究会企画幹事  

2013.4 - 2021.3   

ICCGE2016   現地実行委員  

2013.4 - 2016.3   

ISPLASMA2014   広報委員  

2013.4 - 2014.3   

LEDIA14   庶務・プログラム・現地委員  

2013.4 - 2014.3   

LEDIA13   プログラム・現地委員  

2012.11 - 2013.3   

ISPLASMA2013   現地実行委員  

2012.4 - 2013.3   

IWN2012   庶務委員  

2011.2 - 2012.10   

EMS30-31   会場委員  

2010.10 - 2012.7   

APWS2011   現地実行委員  

2010.6 - 2011.6   

IWBNS-7   現地実行委員  

2010.4 - 2011.3   

ISGN-2   現地実行委員  

2007.8 - 2008.8   

IWN2006   現地実行委員  

2005.10 - 2006.10   

Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes

Kushimoto Maki, Zhang Ziyi, Yoshikawa Akira, Aoto Koji, Honda Yoshio, Sasaoka Chiaki, Schowalter Leo J. J., Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 121 ( 22 )   2022.11

High In content nitride sub-micrometer platelet arrays for long wavelength optical applications

Cai Wentao, Furusawa Yuta, Wang Jia, Park Jeong-Hwan, Liao Yaqiang, Cheong Hea-Jeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 121 ( 21 )   2022.11

Substitutional diffusion of Mg into GaN from GaN/Mg mixture

Itoh Yuta, Lu Shun, Watanabe Hirotaka, Deki Manato, Nitta Shugo, Honda Yoshio, Tanaka Atsushi, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 15 ( 11 )   2022.11

The photoemission characteristics of a NEA InGaN photocathode by simultaneously supplying Cs and O2

Kashima Masahiro, Itokawa Yuya, Kanai Toshiya, Sato Daiki, Koizumi Atsushi, Iijima Hokuto, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi, Meguro Takashi

APPLIED SURFACE SCIENCE   Vol. 599   2022.10

Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy

Ohnishi Kazuki, Fujimoto Naoki, Nitta Shugo, Watanabe Hirotaka, Lu Shun, Deki Manato, Honda Yoshio, Amano Hiroshi

JOURNAL OF APPLIED PHYSICS   Vol. 132 ( 14 )   2022.10

High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN

Schimmel Saskia, Salamon Michael, Tomida Daisuke, Neumeier Steffen, Ishiguro Tohru, Honda Yoshio, Chichibu Shigefusa F., Amano Hiroshi

MATERIALS   Vol. 15 ( 17 )   2022.9

Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal-organic vapor phase epitaxy

Hu Nan, Avit Geoffrey, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 121 ( 8 )   2022.8

Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates

Ohnishi Kazuki, Fujimoto Naoki, Nitta Shugo, Watanabe Hirotaka, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 592   2022.8

Weak metastability of Al (x) Ga1-x N (x=13/24, 15/24, 17/24) shown by analyzing AlGaN grown on AlN with dense macrosteps

Hirano Akira, Nagasawa Yosuke, Ippommatsu Masamichi, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Kojima Kazunobu, Chichibu Shigefusa F.

APPLIED PHYSICS EXPRESS   Vol. 15 ( 7 )   2022.7

Space-Charge Profiles and Carrier Transport Properties in Dopant-Free GaN-Based p-n Junction Formed by Distributed Polarization Doping

Kumabe Takeru, Kawasaki Seiya, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 16 ( 7 )   2022.7

Dual-peak electroluminescence spectra generated from Al (n) /12Ga1-n/12N (n=2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Chichibu Shigefusa F.

JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 55 ( 25 )   2022.6

Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors.

Tanaka A, Sugiura R, Kawaguchi D, Wani Y, Watanabe H, Sena H, Ando Y, Honda Y, Igasaki Y, Wakejima A, Ando Y, Amano H

Scientific reports   Vol. 12 ( 1 ) page： 8175   2022.5

Laser slice thinning of GaN-on-GaN high electron mobility transistors

Tanaka Atsushi, Sugiura Ryuji, Kawaguchi Daisuke, Wani Yotaro, Watanabe Hirotaka, Sena Hadi, Ando Yuto, Honda Yoshio, Igasaki Yasunori, Wakejima Akio, Ando Yuji, Amano Hiroshi

SCIENTIFIC REPORTS   Vol. 12 ( 1 ) page： 7363   2022.5

The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer

Park Jeong-Hwan, Cai Wentao, Cheong Heajeong, Ushida Yasuhisa, Lee Da-Hoon, Ando Yuto, Furusawa Yuta, Honda Yoshio, Lee Dong-Seon, Seong Tae-Yeon, Amano Hiroshi

JOURNAL OF APPLIED PHYSICS   Vol. 131 ( 15 )   2022.4

"Regrowth-free" fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration

Kumabe Takeru, Watanabe Hirotaka, Ando Yuto, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 15 ( 4 )   2022.4

Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode

Nagata Kengo, Anada Satoshi, Miwa Hiroshi, Matsui Shinichi, Boyama Shinya, Saito Yoshiki, Kushimoto Maki, Honda Yoshio, Takeuchi Tetsuya, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 15 ( 4 )   2022.4

Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED

Matsubara Taichi, Nagatat Kengo, Kushimoto Maki, Tomai Shigekazu, Katsumata Satoshi, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 15 ( 4 )   2022.4

Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

Liao Yaqiang, Chen Tao, Wang Jia, Cai Wentao, Ando Yuto, Yang Xu, Watanabe Hirotaka, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 120 ( 12 )   2022.3

Visualization of depletion layer in AlGaN homojunction p-n junction Reviewed

Nagata Kengo, Anada Satoshi, Saito Yoshiki, Kushimoto Maki, Honda Yoshio, Takeuchi Tetsuya, Yamamoto Kazuo, Hirayama Tsukasa, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 15 ( 3 )   2022.3

Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN Reviewed

Itoh Yuta, Watanabe Hirotaka, Ando Yuto, Kano Emi, Deki Manato, Nitta Shugo, Honda Yoshio, Tanaka Atsushi, Ikarashi Nobuyuki, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 15 ( 2 )   2022.2

Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate Reviewed

Kushimoto Maki, Zhang Ziyi, Honda Yoshio, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( 1 )   2022.1

Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium Reviewed

Wang Jia, Lu Shun, Cai Wentao, Kumabe Takeru, Ando Yuto, Liao Yaqiang, Honda Yoshio, Xie Ya-Hong, Amano Hiroshi

IEEE ELECTRON DEVICE LETTERS   Vol. 43 ( 1 ) page： 150 - 153   2022.1

An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources

Jadhav Aakash, Ozawa Takashi, Baratov Ali, Asubar Joel T., Kuzuhara Masaaki, Wakejima Akio, Yamashita Shunpei, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Roy Sourajeet, Sarkar Biplab

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 10   page： 797 - 807   2022

Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg Reviewed

Lu Shun, Deki Manato, Wang Jia, Ohnishi Kazuki, Ando Yuto, Kumabe Takeru, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 119 ( 24 )   2021.12

Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells Reviewed

Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Chichibu Shigefusa F.

JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 54 ( 48 )   2021.12

Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions Reviewed

Jadhav Aakash, Ozawa Takashi, Baratov Ali, Asubar Joel T., Kuzuhara Masaaki, Wakejima Akio, Yamashita Shunpei, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Roy Sourajeet, Sarkar Biplab

IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 68 ( 12 ) page： 6059 - 6064   2021.12

Multiple electron beam generation from InGaN photocathode Reviewed

Sato Daiki, Shikano Haruka, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 39 ( 6 )   2021.12

Cyclotron production of ²²⁵Ac from an electroplated ²²⁶Ra target. Reviewed

Nagatsu K, Suzuki H, Fukada M, Ito T, Ichinose J, Honda Y, Minegishi K, Higashi T, Zhang MR

European journal of nuclear medicine and molecular imaging   Vol. 49 ( 1 ) page： 279 - 289   2021.12

Vertical GaN p(+)-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy (vol 119, 152102, 2021) Reviewed

Ohnishi Kazuki, Kawasaki Seiya, Fujimoto Naoki, Nitta Shugo, Watanabe Hirotaka, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 119 ( 20 )   2021.11

Vertical GaN p(+)-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy Reviewed

Ohnishi Kazuki, Kawasaki Seiya, Fujimoto Naoki, Nitta Shugo, Watanabe Hirotaka, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 119 ( 15 )   2021.10

Effective neutron detection using vertical-type BGaN diodes Reviewed

Nakano Takayuki, Mochizuki Ken, Arikawa Takuya, Nakagawa Hisaya, Usami Shigeyoshi, Honda Yoshio, Amano Hiroshi, Vogt Adrian, Schuett Sebastian, Fiederle Michael, Kojima Kazunobu, Chichibu Shigefusa F., Inoue Yoku, Aoki Toru

JOURNAL OF APPLIED PHYSICS   Vol. 130 ( 12 )   2021.9

Smart-cut-like laser slicing of GaN substrate using its own nitrogen Reviewed

Tanaka Atsushi, Sugiura Ryuji, Kawaguchi Daisuke, Yui Toshiki, Wani Yotaro, Aratani Tomomi, Watanabe Hirotaka, Sena Hadi, Honda Yoshio, Igasaki Yasunori, Amano Hiroshi

SCIENTIFIC REPORTS   Vol. 11 ( 1 ) page： 17949   2021.9

Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing Reviewed

Sena Hadi, Tanaka Atsushi, Wani Yotaro, Aratani Tomomi, Yui Toshiki, Kawaguchi Daisuke, Sugiura Ryuji, Honda Yoshio, Igasaki Yasunori, Amano Hiroshi

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING   Vol. 127 ( 9 )   2021.9

Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations Reviewed

Nagata Kengo, Makino Hiroaki, Miwa Hiroshi, Matsui Shinichi, Boyama Shinya, Saito Yoshiki, Kushimoto Maki, Honda Yoshio, Takeuchi Tetsuya, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility Reviewed

Ando Yuto, Deki Manato, Watanabe Hirotaka, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Yamada Hisashi, Shimizu Mitsuaki, Nakamura Tohru, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers Reviewed

Matsukura Yusuke, Inazu Tetsuhiko, Pernot Cyril, Shibata Naoki, Kushimoto Maki, Deki Manato, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy Reviewed

Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Watanabe Hirotaka, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 566   2021.7

Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach Reviewed

Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Cai Wentao, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 7 )   2021.7

Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching Reviewed

Kumabe Takeru, Ando Yuto, Watanabe Hirotaka, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate Reviewed

Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Honda Yoshio, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 14 ( 5 )   2021.5

Discrete AlN mole fraction of n/12 (n=4-8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates Reviewed

Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Kojima Kazunobu, Chichibu Shigefusa F.

JOURNAL OF APPLIED PHYSICS   Vol. 129 ( 16 )   2021.4

Experimental demonstration of GaN IMPATT diode at X-band Reviewed

Kawasaki Seiya, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Arai Manabu, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 14 ( 4 )   2021.4

Numerical Simulation of Ammonothermal Crystal Growth of GaN-Current State, Challenges, and Prospects Reviewed

Schimmel Saskia, Tomida Daisuke, Ishiguro Tohru, Honda Yoshio, Chichibu Shigefusa, Amano Hiroshi

CRYSTALS   Vol. 11 ( 4 )   2021.4

Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching Reviewed

Yamada Takehiro, Ando Yuto, Watanabe Hirotaka, Furusawa Yuta, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Suda Jun, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 14 ( 3 )   2021.3

Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth-A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution

Schimmel Saskia, Tomida Daisuke, Saito Makoto, Bao Quanxi, Ishiguro Toru, Honda Yoshio, Chichibu Shigefusa, Amano Hiroshi

CRYSTALS   Vol. 11 ( 3 )   2021.3

Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication Reviewed

Yasuda Hidehiro, Nishitani Tomohiro, Ichikawa Shuhei, Hatanaka Shuhei, Honda Yoshio, Amano Hiroshi

QUANTUM BEAM SCIENCE   Vol. 5 ( 1 )   2021.3

The difference of InGaN photocathode with photoemission characteristics

Kashima Masahiro, Sato Daiki, Koizumi Atsushi, Iijima Hokuto, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi, Meguro Takashi

JSAP Annual Meetings Extended Abstracts   Vol. 2021.1 ( 0 ) page： 1347 - 1347   2021.2

Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020) Reviewed

Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

OPTICAL MATERIALS EXPRESS   Vol. 11 ( 2 ) page： 524 - 524   2021.2

Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs Reviewed

Jadhav Aakash, Ozawa Takashi, Baratov Ali, Asubar Joel T., Kuzuhara Masaaki, Wakejima Akio, Yamashita Shunpei, Deki Manato, Honda Yoshio, Roy Sourajeet, Amano Hiroshi, Sarkar Biplab

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 9   page： 570 - 581   2021

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces Reviewed

Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 117 ( 24 )   2020.12

Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps Reviewed

Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Kojima Kazunobu, Chichibu Shigefusa F.

APPLIED PHYSICS EXPRESS   Vol. 13 ( 12 )   2020.12

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate Reviewed

Yang Xu, Pristovsek Markus, Nitta Shugo, Liu Yuhuai, Honda Yoshio, Koide Yasuo, Kawarada Hiroshi, Amano Hiroshi

ACS APPLIED MATERIALS & INTERFACES   Vol. 12 ( 41 ) page： 46466 - 46475   2020.10

Optical properties of neodymium ions in nanoscale regions of gallium nitride Reviewed

Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

OPTICAL MATERIALS EXPRESS   Vol. 10 ( 10 ) page： 2614 - 2623   2020.10

Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures Reviewed

Sato Shin-ichiro, Deki Manato, Nishimura Tomoaki, Okada Hiroshi, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Ohshima Takeshi

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Vol. 479   page： 7 - 12   2020.9

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces Reviewed

Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 117 ( 10 )   2020.9

Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO Reviewed

Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 8 )   2020.8

Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures Reviewed International journal

Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 13 ( 7 ) page： .   2020.7

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO Reviewed International journal

Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 13 ( 6 ) page： .   2020.6

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Reviewed

Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 539   page： .   2020.6

Impact of high-temperature implantation of Mg ions into GaN Reviewed International journal

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 5 ) page： .   2020.5

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature Reviewed

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

Simultaneous Growth of Multi-Color Micro LEDs Based on Super Thin Micro-Platelets with Various Surface Areas

Cai Wentao, Kushimoto Maki, Manato Deki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts   Vol. 2020.1 ( 0 ) page： 3111 - 3111   2020.2

Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms. Reviewed

Yamamoto K, Nakano K, Tanaka A, Honda Y, Ando Y, Ogura M, Matsumoto M, Anada S, Ishikawa Y, Amano H, Hirayama T

Microscopy (Oxford, England)   Vol. 69 ( 1 ) page： 1 - 10   2020.2

Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms. Reviewed

Sato Daiki, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 38 ( 1 )   2020.1

Characterization of AlGaN multiple-quantum-wells grown on <i>c</i>-plane AlN/sapphire templates with macro-steps

Kojima Kazunobu, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

Journal of the Japanese Association for Crystal Growth   Vol. 47 ( 3 ) page： n/a   2020

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes Reviewed

Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page： 349 - 352   2020

Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy Reviewed

Nagasawa Yosuke, Sugie Ryuichi, Kojima Kazunobu, Hirano Akira, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

JOURNAL OF APPLIED PHYSICS   Vol. 126 ( 21 )   2019.12

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current Reviewed International journal

Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 114 ( 23 )   2019.6

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates Reviewed International journal

Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors Reviewed International journal

Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability Reviewed International journal

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

Electronic structure analysis at threading dislocation and at m-plane surface of nanopipes in GaN thin films

Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Usami Shigeyoshi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts   Vol. 2019.1 ( 0 ) page： 3122 - 3122   2019.2

Analysis of Cesium Layer on InGaN by Temperature Programmed Desorption Method

Kashima Masahiro, Daiki Sato, Atsushi Koizumi, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano, Hokuto Iijima, Takashi Meguro

JSAP Annual Meetings Extended Abstracts   Vol. 2018.1 ( 0 ) page： 1670 - 1670   2018.3

Effect of thermal treatment on the quantu efficiency of NEA-InGaN photocatode

Kashima Masahiro, Iijima Hokuto, Nishitani Tomohiro, Sato Daiki, Honda Yoshio, Amano Hiroshi, Meguro Takashi

JSAP Annual Meetings Extended Abstracts   Vol. 2017.1 ( 0 ) page： 1554 - 1554   2017.3

A Study on the Photo-resistance and the Decomposition Mechanism of Perfluoro Resins Applied to Encapsulating Deep Ultra Violet LEDs

Nagasawa Yosuke, Yamada Kiho, Nagai Shouko, Hirano Akira, Ipponmatsu Masamichi, Aosaki Ko, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

JSAP Annual Meetings Extended Abstracts   Vol. 2017.1 ( 0 ) page： 1136 - 1136   2017.3

Fabrication and Electric Characteristics Evaluation of GaN-MIS Capacitor with BN

Matsushita Junya, Nagamatsu Kentarou, Yang Xu, Tanaka Atushi, Kushimto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts   Vol. 2016.2 ( 0 ) page： 2888 - 2888   2016.9

Electroluminescence Pattern Investigation of the PIN Diode on GaN Substrate

Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JSAP Annual Meetings Extended Abstracts   Vol. 2016.2 ( 0 ) page： 2867 - 2867   2016.9

Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering Reviewed

Honda Yoshio

Japanese Journal of Applied Physics   Vol. 55   2016

Growth of semipolar (1-101) high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001) Reviewed

Honda Yoshio

Japanese Journal of Applied Physics   Vol. 55   2016

P-GaN by Mg Ion Implantation for Power Device Applications (シリコン材料・デバイス) International journal

SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 114 ( 58 ) page： 109 - 112   2014.5

Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates Reviewed

Son Ji-Su, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Baik Kwang Hyeon, Seo Yong Gon, Hwang Sung-Min

THIN SOLID FILMS   Vol. 546   page： 108 - 113   2013.11

Effects of exciton localization on internal quantum efficiency of InGaN nanowires Reviewed

Murotani Hideaki, Yamada Yoichi, Tabata Takuya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JOURNAL OF APPLIED PHYSICS   Vol. 114 ( 15 )   2013.10

Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire Reviewed

Son Ji-Su, Miao Cao, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Seo Yong Gon, Hwang Sung-Min, Baik Kwang Hyeon

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern Reviewed

Okuno Koji, Oshio Takahide, Shibata Naoki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires Reviewed

Murotani Hideaki, Andoh Hiroya, Tsukamoto Takehiko, Sugiura Toko, Yamada Yoichi, Tabata Takuya, Honda Yoshio, Yamaguchi Masatoshi, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

I-1-2 Epitaxial growth of Ill-nitride by molecular beam epitaxy using high density radical source

KAWAI Yohjiro, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, KONDO Hiroki, HIRAMATSU Mineo, KANO Hiroyuki, YAMAKAWA Kouji, DEN Shouji, Hori Masaru

The Proceedings of the Conference on Information, Intelligence and Precision Equipment : IIP   Vol. 2013 ( 0 ) page： 5 - 7   2013

Polarization properties in InGaN/GaN multiple quantum well on semipolar(1-101)GaN/Si

KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

IEICE technical report. Component parts and materials   Vol. 112 ( 33 ) page： 15 - 18   2012.5

Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers Reviewed

Hashimoto Shin, Akita Katsushi, Yamamoto Yoshiyuki, Ueno Masaki, Nakamura Takao, Takeda Kenichiro, Iwaya Motoaki, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 209 ( 3 ) page： 501 - 504   2012.3

Crystal Growth of Semipolar GaN on Si Substrate(<Special Issue>Breakthrough in Nitride Crystal Growth for Next Generation Devices)

Honda Yoshio

Journal of the Japanese Association for Crystal Growth   Vol. 38 ( 4 ) page： 241 - 248   2012

Optical properties of (1 (1)over-bar 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, Li Zhen-Yu, Chen Yi-Chen, Ling Shih-Chun, Kuo Hao-Chung, Lu Tien-Chang, Wang Shing-Chung, Liao Wei-Tsai, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

JOURNAL OF CRYSTAL GROWTH   Vol. 318 ( 1 ) page： 500 - 504   2011.3

Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates (vol 4, 012105, 2011) Reviewed

Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, Li Zhen-Yu, Chang Wei-Ting, Hsu Hung-Wen, Kuo Hao-Chung, Lu Tien-Chang, Wang Shing-Chung, Liao Wei-Tsai, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

APPLIED PHYSICS EXPRESS   Vol. 4 ( 3 )   2011.3

Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, Li Zhen-Yu, Chang Wei-Ting, Hsu Hung-Wen, Kuo Hao-Chung, Lu Tien-Chang, Wang Shing-Chung, Liao Wei-Tsai, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

APPLIED PHYSICS EXPRESS   Vol. 4 ( 1 )   2011.1

Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

Sugiura Toko, Kim Eun-Hee, Honda Yoshio, Takagi Hiroyuki, Tsukamoto Takehiko, Andoh Hiroya, Yamaguchi Masahito, Sawaki Nobuhiko

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS   Vol. 1399   2011

Achieving high-growth-rate in GaN homoepitaxy using high-density nitrogen radical source Reviewed

Kawai Yohjiro, Chen Shang, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Kondo Hiroki, Hiramatsu Mineo, Kano Hiroyuki, Yamakawa Koji, Den Shoji, Hori Masaru

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

Raman spectroscopic study of residual strain and stress in GaN layer grown on Si substrates

Touko SUGIURA, Yoshio HONDA, Akihiro OKAMOTO, Hiroyuki TAKAGI, Takehiko TSUKAMOTO, Hiroya ANDOH

Journal of National Institute of Technology, Toyota College   Vol. 42 ( 0 ) page： 19 - 22   2010

Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy

TANAKA Shigeyasu, AOYAMA Kentaro, ICHIHASHI Mikio, ARAI Shigeo, HONDA Yoshio, SAWAKI Nobuhiko

Journal of electron microscopy   Vol. 56 ( 4 ) page： 141 - 144   2007.8

Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure

TANAKA Shigeyasu, NAITO Akiyuki, HONDA Yoshio, SAWAKI Nobuhiko, ICHIHASHI Mikio

Journal of electron microscopy   Vol. 56 ( 2 ) page： 37 - 42   2007.4

The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

Technical report of IEICE. SDM   Vol. 105 ( 94 ) page： 69 - 74   2005.5

[Congenital middle ear cholesteatoma: experience in 48 cases]. Reviewed

Kojima H, Miyazaki H, Tanaka Y, Shiwa M, Honda Y, Moriyama H

Nihon Jibiinkoka Gakkai kaiho   Vol. 106 ( 9 ) page： 856 - 65   2003.9

Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy.

Kato Tomonobu, Honda Yoshio, Kawaguchi Yasutoshi, Yamaguchi Masahito, Sawaki Nobuhiko

Japanese Journal of Applied Physics   Vol. 40 ( 3B ) page： 1896 - 1898   2001

Selective Area Growth of GaN on Si Substrate Using SiO2 Mask by Metalorganic Vapor Phase Epitaxy.

Kawaguchi Yasutoshi, Honda Yoshio, Matsushima Hidetada, Yamaguchi Masahito, Hiramatsu Kazumasa, Sawaki Nobuhiko

Japanese Journal of Applied Physics   Vol. 37 ( 8B ) page： L966 - L969   1998

Pulsed-flow growth of polar, semipolar and nonpolar AlGaN Reviewed

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

JOURNAL OF MATERIALS CHEMISTRY C   Vol. 8 ( 25 ) page： 8668 - 8675   2020.7

Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures Reviewed

Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 13 ( 7 ) page： .   2020.7

Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering Reviewed

Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 217 ( 14 )   2020.7

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO Reviewed

Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

APPLIED PHYSICS EXPRESS   Vol. 13 ( 6 ) page： .   2020.6

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Reviewed

Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 539   page： .   2020.6

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR Reviewed

Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J, Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS LETTERS   Vol. 116 ( 12 )   2020.3

Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN Reviewed

Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 35 ( 3 )   2020.3

Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode Reviewed

Sato Daiki, Honda Anna, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

MICROELECTRONIC ENGINEERING   Vol. 223   2020.2

Analysis of trimethylgallium decomposition by high-resolution mass spectrometry Reviewed

Ye Zheng, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 2 )   2020.2

Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism Reviewed

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

2D MATERIALS   Vol. 7 ( 1 )   2020.1

Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire Reviewed

Dinh Duc V, Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 34 ( 12 )   2019.12

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency. Reviewed

Sandupatla A, Arulkumaran S, Ranjan K, Ng GI, Murmu PP, Kennedy J, Nitta S, Honda Y, Deki M, Amano H

Sensors (Basel, Switzerland)   Vol. 19 ( 23 )   2019.11

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties Reviewed

Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

SCIENTIFIC REPORTS   Vol. 9 ( 1 ) page： 15802   2019.11

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

AIP ADVANCES   Vol. 9 ( 9 )   2019.9

Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition Reviewed

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Torigoe Kazuhisa, Kushimoto Maki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 7 )   2019.7

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth Reviewed

Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 516   page： 63 - 66   2019.6

Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth Reviewed

Liu Qiang, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

Frontiers of Nitride Semiconductor Research FOREWORD

Chichibu Shigefusa F, Kumagai Yoshinao, Kojima Kazunobu, Deura Momoko, Akiyama Toru, Arita Munetaka, Fujioka Hiroshi, Fujiwara Yasufumi, Hara Naoki, Hashizume Tamotsu, Hirayama Hideki, Holmes Mark, Honda Yoshio, Imura Masataka, Ishii Ryota, Ishitani Yoshihiro, Iwaya Motoaki, Kamiyama Satoshi, Kangawa Yoshihiro, Katayama Ryuji, Kawakami Yoichi, Kawamura Takahiro, Kobayashi Atsushi, Kuzuhara Masaaki, Matsumoto Koh, Mori Yusuke, Mukai Takashi, Murakami Hisashi, Murotani Hideaki, Nakazawa Satoshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers Reviewed

Nan Hu, Dinh Duc V, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285nm deep-ultraviolet LEDs grown on AlN templates having macrosteps Reviewed

Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Ipponmatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F

APPLIED PHYSICS EXPRESS   Vol. 12 ( 6 )   2019.6

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019) Reviewed

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 514   page： 13 - 13   2019.5

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE Reviewed

Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 512   page： 78 - 83   2019.4

Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method Reviewed

Yamada Jumpei, Usami Shigeyoshi, Ueda Yuki, Honda Yoshio, Amano Hiroshi, Maruyama Takahiro, Naritsuka Shigeya

Jpn. J. Appl. Phys.   Vol. 58 ( 4 )   2019.3

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy Reviewed

Zhibin Liu, Shugo Nitta, Shigeyoshi Usami, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

JOURNAL OF CRYSTAL GROWTH   Vol. 509   page： 50 - 53   2019.3

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics Reviewed

Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

MATERIALS   Vol. 12 ( 5 )   2019.3

Morphological study of InGaN on GaN substrate by supersaturation Reviewed

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 508   page： 58 - 65   2019.2

How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire Reviewed

Hu Nan, Dinh Duc V, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH   Vol. 507   page： 205 - 208   2019.2

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown Reviewed

Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps Reviewed

Kojima K, Nagasawa Y, Hirano A, Ippommatsu M, Honda Y, Amano H, Akasaki I, Chichibu S. F

APPLIED PHYSICS LETTERS   Vol. 114 ( 1 )   2019.1

Observation of Dopant Concentration in GaN Semiconductor by High Sensitivity Electron Holography

Nakano Kiyotaka, Honda Yoshio, Amano Hiroshi, Matsumoto Miko, Anada Satoshi, Yamamoto Kazuo, Ishikawa Yukari, Hirayama Tsukasa, Ando Yuto, Ogura Masaya, Tanaka Atsushi

Materia Japan   Vol. 58 ( 2 ) page： 103-103 - 103   2019

Electronic structure analysis of core structures of threading dislocations in GaN Reviewed

    page： .   2019

Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method Reviewed

  Vol. 36 ( 6 )   2018.11

Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy Reviewed

  Vol. 57 ( 10 )   2018.10

High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire Reviewed

  Vol. 498   page： 377 - 380   2018.9

Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition Reviewed

  Vol. 57 ( 9 )   2018.9

Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy Reviewed

  Vol. 12 ( 8 )   2018.8

Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering Reviewed

  Vol. 57 ( 7 )   2018.7

Study on the Main-Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN-Based DUV-LEDs Reviewed

  Vol. 215 ( 10 )   2018.5

m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates

Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

Physica Status Solidi (A) Applications and Materials Science   Vol. 215 ( 9 )   2018.5

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy Reviewed

  Vol. 11 ( 5 )   2018.5

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching Reviewed

  Vol. 255 ( 5 )   2018.5

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate Reviewed

  Vol. 112 ( 18 )   2018.4

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy Reviewed International journal

  Vol. 482   page： 1 - 8   2018.1

Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes Reviewed

    page： 831-837   2018

Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN Reviewed

  Vol. 86 ( 12 ) page： 41 - 49   2018

Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes Reviewed

    page： 831-837   2018

Charge-to-time converting leading-edge discriminator for plastic-scintillator signals Reviewed International journal

  Vol. 875   page： 193 - 200   2017.12

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes Reviewed International journal

  Vol. 111 ( 12 )   2017.9

Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes Reviewed International journal

  Vol. 214 ( 8 )   2017.8

Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system Reviewed International journal

  Vol. 254 ( 8 )   2017.8

Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations Reviewed International journal

  Vol. 10 ( 8 )   2017.8

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE Reviewed International journal

  Vol. 214 ( 8 )   2017.8

Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants Reviewed

  Vol. 254 ( 8 )   2017.8

A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer Reviewed International journal

  Vol. 468   page： 866 - 869   2017.6

Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10(1)over-bar0) GaN homoepitaxial layers Reviewed International journal

  Vol. 468   page： 552 - 556   2017.6

Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer Reviewed International journal

  Vol. 468   page： 547 - 551   2017.6

Annealing effect on threading dislocations in a GaN grown on Si substrate Reviewed International journal

  Vol. 468   page： 835 - 838   2017.6

Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer Reviewed International journal

  Vol. 468   page： 110 - 113   2017.6

Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output Reviewed

  Vol. 56 ( 6 )   2017.6

III-nitride core-shell nanorod array on quartz substrates Reviewed

  Vol. 7   2017.3

AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method Reviewed International journal

  Vol. 56 ( 1 )   2017.1

Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy Reviewed International journal

  Vol. 56 ( 1 )   2017.1

Development of Sustainable Smart Society based on Transformative Electronics Reviewed

    page： .   2017

Development of Sustainable Smart Society based on Transformative Electronics Reviewed

    page： .   2017

Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer Reviewed International journal

  Vol. 454   page： 114 - 120   2016.11

Controlled morphology of regular GaN microrod arrays by a selective area growth with HVPE Reviewed International journal

  Vol. 447   page： 55 - 61   2016.8

Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study Reviewed International journal

  Vol. 55 ( 8 )   2016.8

Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering Reviewed International journal

  Vol. 55 ( 5 )   2016.5

Growth of semipolar (1(1)over-bar01) high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001) Reviewed International journal

  Vol. 55 ( 5 )   2016.5

Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy Reviewed International journal

  Vol. 55 ( 5 )   2016.5

Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity Reviewed International journal

  Vol. 55 ( 5 )   2016.5

Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy Reviewed

  Vol. 55 ( 5 )   2016.5

Study of radiation detection properties of GaN pn diode Reviewed

  Vol. 55 ( 5 )   2016.5

Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum Reviewed International journal

  Vol. 55 ( 5 )   2016.5

Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy Reviewed International journal

  Vol. 55 ( 5 )   2016.5

Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer Reviewed International journal

  Vol. 55 ( 5 )   2016.5

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode Reviewed International journal

  Vol. 11 ( 1 ) page： 215   2016.4

Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations Reviewed

  Vol. 55 ( 3 )   2016.3

Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells Reviewed International journal

  Vol. 49 ( 2 )   2016.1

The interface analysis of GaN grown on 0 degrees off 6H-SiC with an ultra-thin buffer layer Reviewed

  Vol. 55 ( 1 )   2016.1

Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition Reviewed International journal

  Vol. 18 ( 9 ) page： 1505 - 1514   2016

Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications Reviewed International journal

  Vol. 9926   2016

Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells Reviewed International journal

  Vol. 252 ( 5 ) page： 940 - 945   2015.5

Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed

  Vol. 8 ( 2 ) page： 022702   2015.2

Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed

  Vol. 8 ( 2 ) page： 022702   2015.2

Optically pumped lasing properties of (1(1)over-bar01) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed International journal

  Vol. 8 ( 2 )   2015.2

Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region Reviewed International journal

  Vol. 11   page： 294 - 303   2015.1

Nature of yellow luminescence band in GaN grown on Si substrate Reviewed International journal

  Vol. 53 ( 11 )   2014.11

Quantum Efficiency and Life Time of GaN and InGaN with NEA-surface International journal

Sato Daiki, Nishitani Tomohiro, Maekawa Takuya, Honda Yoshio, Amano Hiroshi

IEICE technical report. Component parts and materials   Vol. 114 ( 202 ) page： 49-54 - 54   2014.9

P-GaN by Mg Ion Implantation for Power Device Applications

SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

IEICE technical report. Component parts and materials   Vol. 114 ( 57 ) page： 109-112 - 112   2014.5

P-GaN by Mg Ion Implantation for Power Device Applications

SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

IEICE technical report. Electron devices   Vol. 114 ( 56 ) page： 109-112 - 112   2014.5

Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask Reviewed International journal

  Vol. 53 ( 5 )   2014.5

In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy Reviewed International journal

  Vol. 115 ( 9 )   2014.3

Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays Reviewed International journal

  Vol. 53 ( 3 )   2014.3

Novel activation process for Mg-implanted GaN Reviewed International journal

  Vol. 388   page： 112 - 115   2014.2

Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching International journal

Ji-Su Son, Yoshio Honda, Hiroshi Amano

OPTICS EXPRESS   Vol. 22 ( 3 ) page： 3585 - 3592   2014.2

Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate Reviewed

    page： 90030E-90030E-6   2014

Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask Reviewed

  Vol. 53 ( 5S1 ) page： 05FL01   2014

Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH< sub> 3</sub> interrupted etching Reviewed

  Vol. 22 ( 3 ) page： 3585-3592   2014

Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate Reviewed

  Vol. 11 ( 3‐4 ) page： 722-725   2014

Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays Reviewed

  Vol. 53 ( 3 ) page： 30306   2014

Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Reviewed

  Vol. 16 ( 11 ) page： 2273-2282   2014

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

  Vol. 11 ( 3‐4 ) page： 393-396   2014

In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy Reviewed

  Vol. 115 ( 9 ) page： 94906   2014

Novel activation process for Mg-implanted GaN Reviewed

  Vol. 388   page： 112-115   2014

Recombination dynamics and internal quantum efficiency in InGaN nanowires Reviewed

  Vol. 11 ( 3-4 ) page： 652 - 655   2014

Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate Reviewed International journal

  Vol. 9003   2014

Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Reviewed International journal

  Vol. 16 ( 11 ) page： 2273 - 2282   2014

Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate Reviewed International journal

  Vol. 11 ( 3-4 ) page： 722 - 725   2014

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

  Vol. 11 ( 3-4 ) page： 393 - 396   2014

X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

  Vol. 11 ( 3‐4 ) page： 393-396   2014

Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate Reviewed

    page： 90030E-90030E-6   2014

Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask Reviewed

  Vol. 53 ( 5S1 ) page： 05FL01   2014

Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH< sub> 3</sub> interrupted etching Reviewed

  Vol. 22 ( 3 ) page： 3585-3592   2014

Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays Reviewed

  Vol. 53 ( 3 ) page： 30306   2014

Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate Reviewed

  Vol. 11 ( 3‐4 ) page： 722-725   2014

In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy Reviewed

  Vol. 115 ( 9 ) page： 94906   2014

Novel activation process for Mg-implanted GaN Reviewed

  Vol. 388   page： 112-115   2014

Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Reviewed

  Vol. 16 ( 11 ) page： 2273-2282   2014

MOVPE法によるGaN及びAlGaNへのCドーピングに関する研究 (レーザ・量子エレクトロニクス) Reviewed

若杉 侑矢, 本田 善央, 天野 浩

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 331 ) page： 47 - 50   2013.11

MOVPE法によるGaN及びAlGaNへのCドーピングに関する研究 (電子部品・材料) Reviewed

若杉 侑矢, 本田 善央, 天野 浩

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 330 ) page： 47 - 50   2013.11

MOVPE法によるGaN及びAlGaNへのCドーピングに関する研究 (電子デバイス) Reviewed

若杉 侑矢, 本田 善央, 天野 浩

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 329 ) page： 47 - 50   2013.11

高輝度電子ビーム源を目指したNEA表面p-GaNの量子効率 (レーザ・量子エレクトロニクス) Reviewed

前川 拓也, 本田 善央, 天野 浩, 西谷 智博

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 331 ) page： 43 - 46   2013.11

高輝度電子ビーム源を目指したNEA表面p-GaNの量子効率 (電子部品・材料) Reviewed

前川 拓也, 本田 善央, 天野 浩, 西谷 智博

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 330 ) page： 43 - 46   2013.11

高輝度電子ビーム源を目指したNEA表面p-GaNの量子効率 (電子デバイス) Reviewed

前川 拓也, 本田 善央, 天野 浩, 西谷 智博

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 329 ) page： 43 - 46   2013.11

Fabrication of InGaN/GaN Multiple Quantum Wells on (1(1)over-bar01) GaN Reviewed

Tanikawa Tomoyuki, Sano Tomotaka, Kushimoto Maki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer Reviewed

Ohata Toshiya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy Reviewed

Doi Tomohiro, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

Stacking Faults and Luminescence Property of InGaN Nanowires Reviewed

Tabata Takuya, Paek Jihyun, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate Reviewed

Sano Tomotaka, Doi Tomohiro, Inada Shunko Albano, Sugiyama Tomohiko, Honda Yoshio, Amano Hiroshi, Yoshino Takashi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer Reviewed

Yamada Takaya, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy Reviewed

Nakagawa Shinta, Tabata Takuya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, and H. Amano

phys. stat. sol. (c)   Vol. 10 ( 3 ) page： 369-372   2013.3

Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, and H. Amano

phys. stat. sol. (c)   Vol. 10 ( 3 ) page： 369-372   2013.3

Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, H. Amano

phys. stat. sol. (c)   Vol. 10 ( 3 ) page： 369-372   2013.3

Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, H. Amano

phys. stat. sol. (c)   Vol. 10 ( 3 ) page： 369-372   2013.3

Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN Reviewed

Amano, Hiroshi;

Japanese Journal of Applied Physics   Vol. 52 ( 5R ) page： 50001   2013

Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy Reviewed

Doi, Tomohiro; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JB14   2013

Growth of GaN on Si (111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer Reviewed

Yamada, Takaya; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JB16   2013

Fabrication of InGaN/GaN Multiple Quantum Wells on (1bar 101) GaN Reviewed

Tanikawa, Tomoyuki; Sano, Tomotaka; Kushimoto, Maki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JC05   2013

Stacking Faults and Luminescence Property of InGaN Nanowires Reviewed

Tabata, Takuya; Paek, Jihyun; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JE06   2013

Effects of nano-and microscale SiO2 masks on the growth of a-plane GaN layers on r-plane sapphire Reviewed

Son, Ji-Su; Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Seo, Yong Gon; Hwang, Sung-Min; Baik, Kwang Hyeon;

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JC04   2013

Characteristics of< i> a</i>-plane GaN films grown on optimized silicon-dioxide-patterned< i> r</i>-plane sapphire substrates Reviewed

Son, Ji-Su; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Baik, Kwang Hyeon; Seo, Yong Gon; Hwang, Sung-Min;

Thin Solid Films   Vol. 546   page： 108-113   2013

Defects generation and annihilation in GaN grown on patterned silicon substrate Reviewed

Sawaki, N; Ito, S; Nakagita, T; Iwata, H; Tanikawa, T; Irie, M; Honda, Y; Yamaguchi, M; Amano, H;

SPIE OPTO     page： 86250K-86250K-6   2013

High internal quantum efficiency blue-green light-emitting diode with small efficiency droop fabricated on low dislocation density GaN substrate Reviewed

Sano, Tomotaka; Doi, Tomohiro; Inada, Shunko Albano; Sugiyama, Tomohiko; Honda, Yoshio; Amano, Hiroshi; Yoshino, Takashi;

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JK09   2013

Growth mode and threading dislocation behavior of GaN films grown on patterned sapphire substrate with radial stripe pattern Reviewed

Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JB09   2013

Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer Reviewed

Ohata, Toshiya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JB11   2013

GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy Reviewed

Nakagawa, Shinta; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JE07   2013

Effects of exciton localization on internal quantum efficiency of InGaN nanowires Reviewed

Murotani, Hideaki; Yamada, Yoichi; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

Journal of Applied Physics   Vol. 114 ( 15 ) page： 153506   2013

GaN Overgrowth on Thermally Etched Nanoporous GaN Template Reviewed

Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JB03   2013

Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

Okuno Koji, Oshio Takahide, Shibata Naoki, Honda Yoshio, Yamaguchi Masahito, Tanaka Shigeyasu, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3   Vol. 10 ( 3 ) page： 369 - 372   2013

Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer Reviewed

Ohata, Toshiya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JB11   2013

Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN Reviewed

Amano, Hiroshi

Japanese Journal of Applied Physics   Vol. 52 ( 5R ) page： 50001   2013

Stacking Faults and Luminescence Property of InGaN Nanowires Reviewed

Tabata, Takuya, Paek, Jihyun, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JE06   2013

Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy Reviewed

Doi, Tomohiro, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JB14   2013

Characteristics of< i> a</i>-plane GaN films grown on optimized silicon-dioxide-patterned< i> r</i>-plane sapphire substrates Reviewed

Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Baik, Kwang Hyeon, Seo, Yong Gon, Hwang, Sung-Min

Thin Solid Films   Vol. 546   page： 108-113   2013

High internal quantum efficiency blue-green light-emitting diode with small efficiency droop fabricated on low dislocation density GaN substrate Reviewed

Sano, Tomotaka, Doi, Tomohiro, Inada, Shunko Albano, Sugiyama, Tomohiko, Honda, Yoshio, Amano, Hiroshi, Yoshino, Takashi

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JK09   2013

Growth of GaN on Si (111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer Reviewed

Yamada, Takaya, Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JB16   2013

Growth mode and threading dislocation behavior of GaN films grown on patterned sapphire substrate with radial stripe pattern Reviewed

Okuno, Koji, Oshio, Takahide, Shibata, Naoki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JB09   2013

GaN Overgrowth on Thermally Etched Nanoporous GaN Template Reviewed

Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JB03   2013

GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy Reviewed

Nakagawa, Shinta, Tabata, Takuya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JE07   2013

Fabrication of InGaN/GaN Multiple Quantum Wells on (1bar 101) GaN Reviewed

Tanikawa, Tomoyuki, Sano, Tomotaka, Kushimoto, Maki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JC05   2013

Effects of nano-and microscale SiO2 masks on the growth of a-plane GaN layers on r-plane sapphire Reviewed

Son, Ji-Su, Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Seo, Yong Gon, Hwang, Sung-Min, Baik, Kwang Hyeon

Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page： 08JC04   2013

Effects of exciton localization on internal quantum efficiency of InGaN nanowires Reviewed

Murotani, Hideaki, Yamada, Yoichi, Tabata, Takuya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Journal of Applied Physics   Vol. 114 ( 15 ) page： 153506   2013

Defects generation and annihilation in GaN grown on patterned silicon substrate Reviewed

Sawaki, N, Ito, S, Nakagita, T, Iwata, H, Tanikawa, T, Irie, M, Honda, Y, Yamaguchi, M, Amano, H

SPIE OPTO     page： 86250K-86250K-6   2013

Effects of low energy e-beam irradiation on cathodoluminescence from GaN Reviewed

S. Suihkonen, H. Nykänen, T. Tanikawa, M. Yamaguchi, Y. Honda, and H. Amano

phys. stat. sol. (a)   Vol. 210 ( 2 ) page： 383-385   2012.12

Effects of low energy e-beam irradiation on cathodoluminescence from GaN Reviewed

S. Suihkonen, H. Nykänen, T. Tanikawa, M. Yamaguchi, Y. Honda, H. Amano

phys. stat. sol. (a)   Vol. 210 ( 2 ) page： 383-385   2012.12

Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Reviewed

KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

IEICE technical report. Electron devices   Vol. 112 ( 32 ) page： 15 - 18   2012.5

Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Reviewed

KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

  Vol. 112 ( 33 ) page： 15 - 18   2012.5

Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Reviewed

KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

Technical report of IEICE. SDM   Vol. 112 ( 34 ) page： 15 - 18   2012.5

Strain relaxation in thick (1-101)InGaN grown on GaN/Si substrate Reviewed

T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

phys. stat. sol. (b)   Vol. 249 ( 3 ) page： 468–471   2012.3

Strain relaxation in thick (1-101)InGaN grown on GaN/Si substrate Reviewed

T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

phys. stat. sol. (b)   Vol. 249 ( 3 ) page： 468–471   2012.3

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano

phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page： 646–649   2012.3

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, H. Amano

phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page： 646–649   2012.3

Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate Reviewed

T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, and Y. Mori

phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page： 875–878   2012.3

Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate Reviewed

T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, Y. Mori

phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page： 875–878   2012.3

In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page： 480–483   2012.3

A local vibration mode in a carbon doped (1-101)AlGaN Reviewed

N. Sawaki, K. Hagiwara, K. Yamashita, N. Koide, Y. Honda, M. Yamaguchi, and H. Amano

SPIE   Vol. 8262   page： 82620D   2012.3

A local vibration mode in a carbon doped (1-101)AlGaN Reviewed

N. Sawaki, K. Hagiwara, K. Yamashita, N. Koide, Y. Honda, M. Yamaguchi, H. Amano

SPIE   Vol. 8262   page： 82620D   2012.3

In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page： 480–483   2012.3

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano

phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page： 646–649   2012.3

Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate Reviewed

Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Sawaki Nobuhiko

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 249 ( 3 ) page： 468 - 471   2012.3

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, H. Amano

phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page： 646–649   2012.3

Impurity incorporation in semipolar (1-1 0 1) GaN grown on an Si substrate Reviewed

Sawaki Nobuhiko, Hagiwara Kiyotaka, Hikosaka Toshiki, Honda Yoshio

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 27 ( 2 )   2012.2

Impurity incorporation in semipolar (1-101) GaN grown on an Si substrate Reviewed

N. Sawaki, K. Hagiwara, T. Hikosaka, and Y. Honda

Semicond. Sci. Technol.   Vol. 27   page： 024006_1-024006_5   2012.1

Impurity incorporation in semipolar (1-101) GaN grown on an Si substrate Reviewed

N. Sawaki, K. Hagiwara, T. Hikosaka, Y. Honda

Semicond. Sci. Technol.   Vol. 27   page： 024006_1-024006_5   2012.1

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

Tabata Takuya, Paek Jihyun, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   Vol. 9 ( 3-4 ) page： 646 - 649   2012

In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

Mitsunari Tadashi, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   Vol. 9 ( 3-4 ) page： 480 - 483   2012

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

T. Inazu, S. Fukahori, C. Pernot, M. H. Kim, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki

Jpn. J. Appl. Phys.   Vol. 50 ( 12 ) page： 122101_1-122101_3   2011.12

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

T. Inazu, S. Fukahori, C. Pernot, M. H. Kim, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, I. Akasaki

Jpn. J. Appl. Phys.   Vol. 50 ( 12 ) page： 122101_1-122101_3   2011.12

Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, and N. Sawaki

AIP Conf. Proc.   Vol. 1399   page： 503-504   2011.12

Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, and N. Sawaki

AIP Conf. Proc.   Vol. 1399   page： 503-504   2011.12

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

Inazu Tetsuhiko, Fukahori Shinya, Pernot Cyril, Kim Myung Hee, Fujita Takehiko, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Yamaguchi Masahito, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 12 )   2011.12

Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, N. Sawaki

AIP Conf. Proc.   Vol. 1399   page： 503-504   2011.12

Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, N. Sawaki

AIP Conf. Proc.   Vol. 1399   page： 503-504   2011.12

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

Kim Myunghee, Fujita Takehiko, Fukahori Shinya, INAZU Tetsuhiko, PERNOT Cyril, NAGASAWA Yosuke, HIRANO Akira, IPPOMMATSU Masamichi, IWAYA Motoaki, TAKEUCHI Tetsuya, KAMIYAMA Satoshi, YAMAGUCHI Masahito, HONDA Yoshio, AMANO Hiroshi, AKASAKI Isamu

Applied physics express   Vol. 4 ( 9 ) page： "092102 - 1"-"092102-3"   2011.9

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

Kim Myunghee, Fujita Takehiko, Fukahori Shinya, Inazu Tetsuhiko, Pernot Cyril, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Yamaguchi Masahito, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

APPLIED PHYSICS EXPRESS   Vol. 4 ( 9 )   2011.9

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki

Appl. Phys. Express   Vol. 4 ( 9 ) page： 092102_1-092102_3   2011.8

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki

Appl. Phys. Express   Vol. 4 ( 9 ) page： 092102_1-092102_3   2011.8

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, I. Akasaki

Appl. Phys. Express   Vol. 4 ( 9 ) page： 092102_1-092102_3   2011.8

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, I. Akasaki

Appl. Phys. Express   Vol. 4 ( 9 ) page： 092102_1-092102_3   2011.8

(1-101)GaN/Si上InGaN厚膜のMOVPE成長

TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, SAWAKI Nobuhiko

IEICE technical report   Vol. 111 ( 44 ) page： 63 - 66   2011.5

AlGaN系紫外発光素子の通電特性 : UV-LEDの劣化メカニズム

朴 貴珍, 杉山 貴之, 谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 稲津 哲彦, 藤田 武彦, ペルノー シリル, 平野 光

電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   Vol. 111 ( 46 ) page： 123 - 126   2011.5

AlGaN系紫外発光素子の通電特性 : UV-LEDの劣化メカニズム

朴 貴珍, 杉山 貴之, 谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 稲津 哲彦, 藤田 武彦, ペルノー シリル, 平野 光

電子情報通信学会技術研究報告. CPM, 電子部品・材料   Vol. 111 ( 45 ) page： 123 - 126   2011.5

AlGaN系紫外発光素子の通電特性 : UV-LEDの劣化メカニズム

朴 貴珍, 杉山 貴之, 谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 稲津 哲彦, 藤田 武彦, ペルノー シリル, 平野 光

電子情報通信学会技術研究報告. ED, 電子デバイス   Vol. 111 ( 44 ) page： 123 - 126   2011.5

(1-101)GaN/Si上InGaN厚膜のMOVPE成長

谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 澤木 宣彦

電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   Vol. 111 ( 46 ) page： 63 - 66   2011.5

(1-101)GaN/Si上InGaN厚膜のMOVPE成長

谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 澤木 宣彦

電子情報通信学会技術研究報告. CPM, 電子部品・材料   Vol. 111 ( 45 ) page： 63 - 66   2011.5

GaN系HFETsの電流コラプスの測定 : 非極性a面GaN基板上HFET及びc-GaN基板上p-GaNゲートを用いたノーマリーオフ型JHFET

杉山 貴之, 本田 善央, 山口 雅史, 天野 浩, 磯部 康裕, 押村 吉徳, 岩谷 素顕, 竹内 哲也, 上山 智, 赤崎 勇, 今出 完, 北岡 康夫, 森 勇介

電子情報通信学会技術研究報告. ED, 電子デバイス   Vol. 111 ( 44 ) page： 175 - 178   2011.5

RF-MBE法による(111)Si基板上へのInGaNナノワイヤ成長

田畑 拓也, 白 知鉉, 本田 善央, 山口 雅史, 天野 浩

電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   Vol. 111 ( 46 ) page： 45 - 48   2011.5

RF-MBE法による(111)Si基板上へのInGaNナノワイヤ成長

田畑 拓也, 白 知鉉, 本田 善央, 山口 雅史, 天野 浩

電子情報通信学会技術研究報告. ED, 電子デバイス   Vol. 111 ( 44 ) page： 45 - 48   2011.5

RF-MBE法による(111)Si基板上へのInGaNナノワイヤ成長

田畑 拓也, 白 知鉉, 本田 善央, 山口 雅史, 天野 浩

電子情報通信学会技術研究報告. CPM, 電子部品・材料   Vol. 111 ( 45 ) page： 45 - 48   2011.5

GaN系HFETsの電流コラプスの測定 : 非極性a面GaN基板上HFET及びc-GaN基板上p-GaNゲートを用いたノーマリーオフ型JHFET

SUGIYAMA T., HONDA Y., YAMAGUCHI M., AMANO H., ISOBE Y., OSHIMURA Y., IWAYA M., TAKEUCHI T., KAMIYAMA S., AKASAKI I., IMADE M., KITAOKA Y., MORI Y.

IEICE technical report   Vol. 111 ( 46 ) page： 175 - 178   2011.5

GaN系HFETsの電流コラプスの測定 : 非極性a面GaN基板上HFET及びc-GaN基板上p-GaNゲートを用いたノーマリーオフ型JHFET

SUGIYAMA T., HONDA Y., YAMAGUCHI M., AMANO H., ISOBE Y., OSHIMURA Y., IWAYA M., TAKEUCHI T., KAMIYAMA S., AKASAKI I., IMADE M., KITAOKA Y., MORI Y.

IEICE technical report   Vol. 111 ( 45 ) page： 175 - 178   2011.5

Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

phys. stat. sol. (a)   Vol. 208 ( 5 ) page： 1175-1178   2011.5

Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth   Vol. 318 ( 1 ) page： 500-504   2011.5

Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

phys. stat. sol. (a)   Vol. 208 ( 5 ) page： 1175-1178   2011.5

Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes

Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 208 ( 5 ) page： 1175 - 1178   2011.5

Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

J. Cryst. Growth   Vol. 318 ( 1 ) page： 500-504   2011.5

Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

phys. stat. sol. (a)   Vol. 208 ( 5 ) page： 1175-1178   2011.5

Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

phys. stat. sol. (a)   Vol. 208 ( 5 ) page： 1175-1178   2011.5

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano

Appl. Phys. Lett.   Vol. 98 ( 14 ) page： 141905   2011.4

Semi-polar GaN LEDs on Si substrate Reviewed

N. Sawaki and Y. Honda

SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page： 38-41   2011.4

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano

Appl. Phys. Lett.   Vol. 98 ( 14 ) page： 141905   2011.4

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano

Appl. Phys. Lett.   Vol. 98 ( 14 ) page： 141905   2011.4

Semi-polar GaN LEDs on Si substrate Reviewed

N. Sawaki, Y. Honda

SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page： 38-41   2011.4

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano

Appl. Phys. Lett.   Vol. 98 ( 14 ) page： 141905   2011.4

Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Cryst. Growth   Vol. 318 ( 1 ) page： 500-504   2011.3

Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

J. Cryst. Growth   Vol. 318 ( 1 ) page： 500-504   2011.3

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

SPIE   Vol. 7939   page： 79391X   2011.3

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

SPIE   Vol. 7939   page： 79391X   2011.3

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

SPIE   Vol. 7939   page： 79391X   2011.3

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

SPIE   Vol. 7939   page： 79391X   2011.3

Reduction of Efficiency Droop in Semipolar (1101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, LI Zhen-Yu, CHANG Wei-Ting, HSU Hung-Wen, KUO Hao-Chung, LU Tien-Chang, WANG Shing-Chung, LIAO Wei-Tsai, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

Applied physics express   Vol. 4 ( 1 ) page： "012105 - 1"-"012105-3"   2011.1

Semi-polar GaN LEDs on Si substrate Reviewed

N. Sawaki and Y. Honda

SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page： 38-41   2011.1

Semi-polar GaN LEDs on Si substrate Reviewed

N. Sawaki, Y. Honda

SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page： 38-41   2011.1

Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

Appl. Phys. Express   Vol. 4 ( 1 ) page： 01210_1-012105_3   2011.1

Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Appl. Phys. Express   Vol. 4 ( 1 ) page： 01210_1-012105_3   2011.1

Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page： 01AD04_1-01AD04_3   2011.1

Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page： 01AD04_1-01AD04_3   2011.1

Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

Appl. Phys. Express   Vol. 4 ( 1 ) page： 01210_1-012105_3   2011.1

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Appl. Phys. Lett.   Vol. 98 ( 5 ) page： 051902_1-051902_3   2011.1

Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page： 01AD04_1-01AD04_3   2011.1

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Appl. Phys. Lett.   Vol. 98 ( 5 ) page： 051902_1-051902_3   2011.1

Drastic Reduction of Dislocation Density in Semipolar (11(2)over-bar2) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Sawaki Nobuhiko

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 1 )   2011.1

Semi-polar GaN LEDs on Si substrate Reviewed

Sawaki Nobuhiko, Honda Yoshio

SCIENCE CHINA-TECHNOLOGICAL SCIENCES   Vol. 54 ( 1 ) page： 38 - 41   2011.1

Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Appl. Phys. Express   Vol. 4 ( 1 ) page： 01210_1-012105_3   2011.1

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Appl. Phys. Lett.   Vol. 98 ( 5 ) page： 051902_1-051902_3   2011.1

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Appl. Phys. Lett.   Vol. 98 ( 5 ) page： 051902_1-051902_3   2011.1

Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page： 01AD04_1-01AD04_3   2011.1

Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed

Sugiyama Takayuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Oshimura Yoshinori, Iida Daisuke, Iwaya Motoaki, Akasaki Isamu

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes Reviewed

Tanikawa Tomoyuki, Murase Tasuku, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate Reviewed

Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 42 ( 10 ) page： 2575-2578   2010.10