Updated on 2022/03/31

写真a

 
HONDA, Yoshio
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Associate professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Department of Electrical and Electronic Engineering and Information Engineering
Title
Associate professor
Contact information
メールアドレス

Degree 1

  1. doctor of engineering ( 2003.3   Nagoya University ) 

Research Interests 2

  1. 電子材料

  2. 電子材料

Research Areas 1

  1. Others / Others  / Engineering@Electric and Electronic Engineering@Electronic and Electric Materials Engineering

Current Research Project and SDGs 3

  1. Si基板上半極性GaNの積層欠陥、点欠陥抑制による光学的特性の改善

  2. 加工Si基板を用いた半極性GaN上InGaN結晶に関する研究

  3. Crystal growth of thick nitride-semiconductor on Silicon substrate by HVPE

Research History 9

  1. Aoyama Gakuin University

    2016.4

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    Country:Japan

  2. Aoyama Gakuin University

    2016.4

  3. Nagoya University   Associate professor

    2015.10

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    Country:Japan

  4. Nagoya University   Graduate School of Engineering Department of Electrical Engineering and Computer Science

    2014.12

  5. 名古屋大学大学院   工学研究科電子情報システム専攻   准教授

    2014.4 - 2015.9

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    Country:Japan

  6. Chubu University

    2013.9 - 2017.3

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    Country:Japan

  7. スウェーデン王国・リンショピン大学   客員研究員

    2007.8 - 2008.3

  8. 名古屋大学大学院   工学研究科電子情報システム専攻   助教授

    2007.4 - 2014.3

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    Country:Japan

  9. 名古屋大学大学院   工学研究科電子情報システム専攻   助教授

    2003.4 - 2007.3

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    Country:Japan

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Education 3

  1. Nagoya University   Graduate School, Division of Engineering   Electrical engineering

    - 2003

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    Country: Japan

  2. Nagoya University   Graduate School, Division of Engineering   Electrical engineering

    - 2003

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    Country: Japan

  3. Nagoya University   Faculty of Engineering   Electrical engineering

    - 1998

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    Country: Japan

Professional Memberships 3

  1. 日本結晶成長学会ナノ構造・エピタキシャル成長分科会

  2. The Japan Society of Applied Phisics

  3. 日本結晶成長学会ナノ構造・エピタキシャル成長分科会

Committee Memberships 27

  1. LEDIA19   プログラム委員長  

    2019.4 - 2020.3   

  2. ICNS14   実行副委員長  

    2019.3 - 2021.10   

  3. APWS2019   展示委員  

    2018.11 - 2019.10   

  4. LEDIA18   庶務委員  

    2018.4 - 2019.3   

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    Committee type:Academic society

  5. ICMOVPE2018   財務委員  

    2017.4 - 2018.12   

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    Committee type:Academic society

  6. ISPLASMA2018   プログラム委員  

    2017.4 - 2018.3   

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    Committee type:Academic society

  7. LEDIA18   プログラム委員  

    2017.4 - 2018.3   

  8.   庶務委員  

    2016.8 - 2019.3   

  9.   庶務委員  

    2016.6 - 2017.5   

  10.   副実行委員長  

    2016.4 - 2017.3   

  11.   プログラム委員  

    2016.4 - 2017.3   

  12. ISPLASMA2015   実行委員  

    2015.4 - 2016.3   

  13. ISGN-6   総務幹事  

    2014.7 - 2016.3   

  14. LEDIA15   総務委員  

    2014.4 - 2015.3   

  15. 学振162委員会   研究会企画幹事  

    2013.4   

  16. 学振162委員会   研究会企画幹事  

    2013.4   

  17. ICCGE2016   現地実行委員  

    2013.4 - 2016.3   

  18. ISPLASMA2014   広報委員  

    2013.4 - 2014.3   

  19. LEDIA14   庶務・プログラム・現地委員  

    2013.4 - 2014.3   

  20. LEDIA13   プログラム・現地委員  

    2012.11 - 2013.3   

  21. ISPLASMA2013   現地実行委員  

    2012.4 - 2013.3   

  22. IWN2012   庶務委員  

    2011.2 - 2012.10   

  23. EMS30-31   会場委員  

    2010.10 - 2012.7   

  24. APWS2011   現地実行委員  

    2010.6 - 2011.6   

  25. IWBNS-7   現地実行委員  

    2010.4 - 2011.3   

  26. ISGN-2   現地実行委員  

    2007.8 - 2008.8   

  27. IWN2006   現地実行委員  

    2005.10 - 2006.10   

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Awards 2

  1. 日本結晶成長学会ナノ構造・エピタキシャル成長分科会研究奨励賞

    2009.5   日本結晶成長学会  

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    Country:Japan

  2. 日本結晶成長学会ナノ構造・エピタキシャル成長分科会研究奨励賞

    2009.5   日本結晶成長学会  

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    Country:Japan

 

Papers 480

  1. Visualization of depletion layer in AlGaN homojunction p-n junction Reviewed

    Nagata Kengo, Anada Satoshi, Saito Yoshiki, Kushimoto Maki, Honda Yoshio, Takeuchi Tetsuya, Yamamoto Kazuo, Hirayama Tsukasa, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 3 )   2022.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/ac53e2

    Web of Science

  2. Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN Reviewed

    Itoh Yuta, Watanabe Hirotaka, Ando Yuto, Kano Emi, Deki Manato, Nitta Shugo, Honda Yoshio, Tanaka Atsushi, Ikarashi Nobuyuki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 2 )   2022.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/ac481b

    Web of Science

  3. Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate Reviewed

    Kushimoto Maki, Zhang Ziyi, Honda Yoshio, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( 1 )   2022.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ac3a1d

    Web of Science

  4. Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium Reviewed

    Wang Jia, Lu Shun, Cai Wentao, Kumabe Takeru, Ando Yuto, Liao Yaqiang, Honda Yoshio, Xie Ya-Hong, Amano Hiroshi

    IEEE ELECTRON DEVICE LETTERS   Vol. 43 ( 1 ) page: 150 - 153   2022.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/LED.2021.3131057

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  5. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg Reviewed

    Lu Shun, Deki Manato, Wang Jia, Ohnishi Kazuki, Ando Yuto, Kumabe Takeru, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 119 ( 24 )   2021.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0076764

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  6. Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells Reviewed

    Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Chichibu Shigefusa F.

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 54 ( 48 )   2021.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6463/ac2065

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  7. Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions Reviewed

    Jadhav Aakash, Ozawa Takashi, Baratov Ali, Asubar Joel T., Kuzuhara Masaaki, Wakejima Akio, Yamashita Shunpei, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Roy Sourajeet, Sarkar Biplab

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 68 ( 12 ) page: 6059 - 6064   2021.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TED.2021.3119528

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  8. Multiple electron beam generation from InGaN photocathode Reviewed

    Sato Daiki, Shikano Haruka, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 39 ( 6 )   2021.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1116/6.0001272

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  9. Cyclotron production of <sup>225</sup>Ac from an electroplated <sup>226</sup>Ra target. Reviewed

    Nagatsu K, Suzuki H, Fukada M, Ito T, Ichinose J, Honda Y, Minegishi K, Higashi T, Zhang MR

    European journal of nuclear medicine and molecular imaging   Vol. 49 ( 1 ) page: 279 - 289   2021.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s00259-021-05460-7

    PubMed

  10. Vertical GaN p(+)-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy (vol 119, 152102, 2021) Reviewed

    Ohnishi Kazuki, Kawasaki Seiya, Fujimoto Naoki, Nitta Shugo, Watanabe Hirotaka, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 119 ( 20 )   2021.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0077364

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  11. Vertical GaN p(+)-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy Reviewed

    Ohnishi Kazuki, Kawasaki Seiya, Fujimoto Naoki, Nitta Shugo, Watanabe Hirotaka, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 119 ( 15 )   2021.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0066139

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  12. Effective neutron detection using vertical-type BGaN diodes Reviewed

    Nakano Takayuki, Mochizuki Ken, Arikawa Takuya, Nakagawa Hisaya, Usami Shigeyoshi, Honda Yoshio, Amano Hiroshi, Vogt Adrian, Schuett Sebastian, Fiederle Michael, Kojima Kazunobu, Chichibu Shigefusa F., Inoue Yoku, Aoki Toru

    JOURNAL OF APPLIED PHYSICS   Vol. 130 ( 12 )   2021.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0051053

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  13. Smart-cut-like laser slicing of GaN substrate using its own nitrogen Reviewed

    Tanaka Atsushi, Sugiura Ryuji, Kawaguchi Daisuke, Yui Toshiki, Wani Yotaro, Aratani Tomomi, Watanabe Hirotaka, Sena Hadi, Honda Yoshio, Igasaki Yasunori, Amano Hiroshi

    SCIENTIFIC REPORTS   Vol. 11 ( 1 ) page: 17949   2021.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-021-97159-w

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  14. Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing Reviewed

    Sena Hadi, Tanaka Atsushi, Wani Yotaro, Aratani Tomomi, Yui Toshiki, Kawaguchi Daisuke, Sugiura Ryuji, Honda Yoshio, Igasaki Yasunori, Amano Hiroshi

    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING   Vol. 127 ( 9 )   2021.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s00339-021-04808-y

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  15. Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations Reviewed

    Nagata Kengo, Makino Hiroaki, Miwa Hiroshi, Matsui Shinichi, Boyama Shinya, Saito Yoshiki, Kushimoto Maki, Honda Yoshio, Takeuchi Tetsuya, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/ac0fb6

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  16. Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility Reviewed

    Ando Yuto, Deki Manato, Watanabe Hirotaka, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Yamada Hisashi, Shimizu Mitsuaki, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

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    DOI: 10.35848/1882-0786/ac0ffa

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  17. Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers Reviewed

    Matsukura Yusuke, Inazu Tetsuhiko, Pernot Cyril, Shibata Naoki, Kushimoto Maki, Deki Manato, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

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    DOI: 10.35848/1882-0786/ac154c

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  18. Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy Reviewed

    Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Watanabe Hirotaka, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 566   2021.7

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    DOI: 10.1016/j.jcrysgro.2021.126173

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  19. Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach Reviewed

    Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Cai Wentao, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 7 )   2021.7

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    DOI: 10.35848/1347-4065/ac06b5

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  20. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching Reviewed

    Kumabe Takeru, Ando Yuto, Watanabe Hirotaka, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

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    DOI: 10.35848/1347-4065/abd538

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  21. Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate Reviewed

    Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Honda Yoshio, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 5 )   2021.5

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    DOI: 10.35848/1882-0786/abf443

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  22. Discrete AlN mole fraction of n/12 (n=4-8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates Reviewed

    Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Kojima Kazunobu, Chichibu Shigefusa F.

    JOURNAL OF APPLIED PHYSICS   Vol. 129 ( 16 )   2021.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0042036

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  23. Experimental demonstration of GaN IMPATT diode at X-band Reviewed

    Kawasaki Seiya, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Arai Manabu, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 4 )   2021.4

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    DOI: 10.35848/1882-0786/abe3dc

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  24. Numerical Simulation of Ammonothermal Crystal Growth of GaN-Current State, Challenges, and Prospects Reviewed

    Schimmel Saskia, Tomida Daisuke, Ishiguro Tohru, Honda Yoshio, Chichibu Shigefusa, Amano Hiroshi

    CRYSTALS   Vol. 11 ( 4 )   2021.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/cryst11040356

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  25. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching Reviewed

    Yamada Takehiro, Ando Yuto, Watanabe Hirotaka, Furusawa Yuta, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Suda Jun, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 3 )   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/abe657

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  26. Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth-A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution Reviewed

    Schimmel Saskia, Tomida Daisuke, Saito Makoto, Bao Quanxi, Ishiguro Toru, Honda Yoshio, Chichibu Shigefusa, Amano Hiroshi

    CRYSTALS   Vol. 11 ( 3 )   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/cryst11030254

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  27. Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication Reviewed

    Yasuda Hidehiro, Nishitani Tomohiro, Ichikawa Shuhei, Hatanaka Shuhei, Honda Yoshio, Amano Hiroshi

    QUANTUM BEAM SCIENCE   Vol. 5 ( 1 )   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/qubs5010005

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  28. Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020) Reviewed

    Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

    OPTICAL MATERIALS EXPRESS   Vol. 11 ( 2 ) page: 524 - 524   2021.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/OME.420328

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  29. Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs Reviewed

    Jadhav Aakash, Ozawa Takashi, Baratov Ali, Asubar Joel T., Kuzuhara Masaaki, Wakejima Akio, Yamashita Shunpei, Deki Manato, Honda Yoshio, Roy Sourajeet, Amano Hiroshi, Sarkar Biplab

    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 9   page: 570 - 581   2021

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    DOI: 10.1109/JEDS.2021.3081463

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  30. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces Reviewed

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 24 )   2020.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0028516

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  31. Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps Reviewed

    Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Kojima Kazunobu, Chichibu Shigefusa F.

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 12 )   2020.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/abcb49

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  32. Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate Reviewed

    Yang Xu, Pristovsek Markus, Nitta Shugo, Liu Yuhuai, Honda Yoshio, Koide Yasuo, Kawarada Hiroshi, Amano Hiroshi

    ACS APPLIED MATERIALS & INTERFACES   Vol. 12 ( 41 ) page: 46466 - 46475   2020.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsami.0c11883

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  33. Optical properties of neodymium ions in nanoscale regions of gallium nitride Reviewed

    Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

    OPTICAL MATERIALS EXPRESS   Vol. 10 ( 10 ) page: 2614 - 2623   2020.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/OME.401765

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  34. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures Reviewed

    Sato Shin-ichiro, Deki Manato, Nishimura Tomoaki, Okada Hiroshi, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Ohshima Takeshi

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Vol. 479   page: 7 - 12   2020.9

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    DOI: 10.1016/j.nimb.2020.06.007

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  35. Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces Reviewed

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 10 )   2020.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0010774

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  36. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO Reviewed

    Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 8 )   2020.8

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  37. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures Reviewed International journal

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 7 ) page: .   2020.7

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  38. Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO Reviewed International journal

    Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 6 ) page: .   2020.6

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  39. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Reviewed

    Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 539   page: .   2020.6

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  40. Impact of high-temperature implantation of Mg ions into GaN Reviewed International journal

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 5 ) page: .   2020.5

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  41. Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature Reviewed

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

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    DOI: 10.1002/pssb.201900554

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  42. Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms. Reviewed

    Yamamoto K, Nakano K, Tanaka A, Honda Y, Ando Y, Ogura M, Matsumoto M, Anada S, Ishikawa Y, Amano H, Hirayama T

    Microscopy (Oxford, England)   Vol. 69 ( 1 ) page: 1 - 10   2020.2

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    DOI: 10.1093/jmicro/dfz037

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  43. Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms. Reviewed

    Sato Daiki, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 38 ( 1 )   2020.1

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    DOI: 10.1116/1.5120417

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  44. Characterization of AlGaN multiple-quantum-wells grown on <i>c</i>-plane AlN/sapphire templates with macro-steps Reviewed

    Kojima Kazunobu, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    Journal of the Japanese Association for Crystal Growth   Vol. 47 ( 3 ) page: n/a   2020

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    <p>  The microscopic structural and optical characteristics of AlGaN light-emitting diodes (LEDs) fabricated on the AlN templates with dense macrosteps are shown to clarify the origin of their high internal quantum efficiency of radiation (IQE). The cross-sectional transmission electron microscopy observations under the high-angle annular dark field scanning mode and microscopic energy dispersive X-ray spectroscopy revealed that the AlGaN cladding layer under the AlGaN quantum well (QW) layer had a microscopic compositional modulation, which originates from the macrosteps at the AlN template surface. Moreover, Ga-rich portions in the cladding layer behaved as current micropaths, and the micropaths are connected with the carrier localization structure formed in QWs. The in-plane cathodoluminescence (CL) spectroscopy showed a significant inhomogeneity of the CL characteristics. The gentle slopes at the sample surface showed brighter emissions with a lower peak photon energy, confirming the carrier localization. This carrier localization structure in the QWs combined with the current micropaths in the cladding layer can increase the IQE as well as external quantum efficiency of the AlGaN LEDs.</p>

    DOI: 10.19009/jjacg.47-3-04

    CiNii Research

  45. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes Reviewed

    Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page: 349 - 352   2020

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  46. Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy Reviewed

    Nagasawa Yosuke, Sugie Ryuichi, Kojima Kazunobu, Hirano Akira, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    JOURNAL OF APPLIED PHYSICS   Vol. 126 ( 21 )   2019.12

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    DOI: 10.1063/1.5125623

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  47. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current Reviewed International journal

    Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 114 ( 23 )   2019.6

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    DOI: 10.1063/1.5097767

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  48. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates Reviewed International journal

    Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab1250

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  49. Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors Reviewed International journal

    Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab06b9

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  50. Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability Reviewed International journal

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab106c

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  51. Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering Reviewed

    Honda Yoshio

    Japanese Journal of Applied Physics   Vol. 55   2016

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  52. Growth of semipolar (1-101) high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001) Reviewed

    Honda Yoshio

    Japanese Journal of Applied Physics   Vol. 55   2016

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  53. P-GaN by Mg Ion Implantation for Power Device Applications (シリコン材料・デバイス) International journal

    SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 114 ( 58 ) page: 109 - 112   2014.5

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    We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique and high temperature implantation, ion implantation damage was greatly reduced. This soft implantation made the post anneal more effectively to recover the implantation damage and activate the implanted Mg ions. We believe this p-GaN by Mg ion implantation will contribute to GaN to enter high output power device application field.

  54. P-GaN by Mg Ion Implantation for Power Device Applications (電子部品・材料)

    SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 114 ( 57 ) page: 109 - 112   2014.5

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:一般社団法人電子情報通信学会  

    We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique and high temperature implantation, ion implantation damage was greatly reduced. This soft implantation made the post anneal more effectively to recover the implantation damage and activate the implanted Mg ions. We believe this p-GaN by Mg ion implantation will contribute to GaN to enter high output power device application field.

  55. P-GaN by Mg Ion Implantation for Power Device Applications (電子デバイス)

    SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 114 ( 56 ) page: 109 - 112   2014.5

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:一般社団法人電子情報通信学会  

    We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique and high temperature implantation, ion implantation damage was greatly reduced. This soft implantation made the post anneal more effectively to recover the implantation damage and activate the implanted Mg ions. We believe this p-GaN by Mg ion implantation will contribute to GaN to enter high output power device application field.

  56. Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates Reviewed

    Son Ji-Su, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Baik Kwang Hyeon, Seo Yong Gon, Hwang Sung-Min

    THIN SOLID FILMS   Vol. 546   page: 108 - 113   2013.11

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    DOI: 10.1016/j.tsf.2013.02.048

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  57. Effects of exciton localization on internal quantum efficiency of InGaN nanowires Reviewed

    Murotani Hideaki, Yamada Yoichi, Tabata Takuya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JOURNAL OF APPLIED PHYSICS   Vol. 114 ( 15 )   2013.10

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    DOI: 10.1063/1.4825124

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  58. Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire Reviewed

    Son Ji-Su, Miao Cao, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Seo Yong Gon, Hwang Sung-Min, Baik Kwang Hyeon

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JC04

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  59. Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern Reviewed

    Okuno Koji, Oshio Takahide, Shibata Naoki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JB09

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  60. Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires Reviewed

    Murotani Hideaki, Andoh Hiroya, Tsukamoto Takehiko, Sugiura Toko, Yamada Yoichi, Tabata Takuya, Honda Yoshio, Yamaguchi Masatoshi, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JE10

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  61. I-1-2 Epitaxial growth of Ill-nitride by molecular beam epitaxy using high density radical source Reviewed

    河合 洋次郎, 本田 善央, 山口 雅史, 天野 浩, 近藤 博基, 平松 美根男, 加納 浩之, 山川 晃司, 田 昭治, 堀 勝

    IIP情報・知能・精密機器部門講演会講演論文集   Vol. 2013 ( 0 ) page: 5 - 7   2013

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:The Japan Society of Mechanical Engineers  

    Although plasma-assisted molecular beam epitaxy(PA-MBE) is a promising technique for GaN growth,the growth rate obtained by this technique is lower than that obtained by metal organic vapor phase epitaxy(MOVPE).In order to improve the growth rate of the technique,high density radical source(HDRS) was developed.By vacuum ultraviolet absorption spectroscopy(VUVAS) measurement,two orders of magnitude higher radical density was confirmed in a comparison of the HDRS and a conventional radical source(CRS).While faster growth rate of 1.4μm/h in GaN homoepitaxy was achieved,better crystalline quality of InxGa_<(1-x)>N(x=0.03〜0.16) epilayers with approximately 1.4μm thickness were also achieved by introducing the HDRS in PA-MBE.

    DOI: 10.1299/jsmeiip.2013.5

    CiNii Research

  62. Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers Reviewed

    Hashimoto Shin, Akita Katsushi, Yamamoto Yoshiyuki, Ueno Masaki, Nakamura Takao, Takeda Kenichiro, Iwaya Motoaki, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 209 ( 3 ) page: 501 - 504   2012.3

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    DOI: 10.1002/pssa.201100379

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  63. Crystal Growth of Semipolar GaN on Si Substrate(<Special Issue>Breakthrough in Nitride Crystal Growth for Next Generation Devices) Reviewed

    本田 善央

    日本結晶成長学会誌   Vol. 38 ( 4 ) page: 241 - 248   2012

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    (1-101) GaN and (11-22) GaN was grown by MOVPE on etched Si substrate. A characteristic of optical, electrical and impurity was evaluated on each face GaN. We also reported an Indium incorporation and a process of dislocation propagation on the (1-101) GaN in this paper.

    DOI: 10.19009/jjacg.38.4_241

    CiNii Research

  64. Optical properties of (1 (1)over-bar 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

    Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, Li Zhen-Yu, Chen Yi-Chen, Ling Shih-Chun, Kuo Hao-Chung, Lu Tien-Chang, Wang Shing-Chung, Liao Wei-Tsai, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF CRYSTAL GROWTH   Vol. 318 ( 1 ) page: 500 - 504   2011.3

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    DOI: 10.1016/j.jcrysgro.2010.10.054

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  65. Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates (vol 4, 012105, 2011) Reviewed

    Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, Li Zhen-Yu, Chang Wei-Ting, Hsu Hung-Wen, Kuo Hao-Chung, Lu Tien-Chang, Wang Shing-Chung, Liao Wei-Tsai, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    APPLIED PHYSICS EXPRESS   Vol. 4 ( 3 )   2011.3

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    DOI: 10.1143/APEX.4.039201

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  66. Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

    Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, Li Zhen-Yu, Chang Wei-Ting, Hsu Hung-Wen, Kuo Hao-Chung, Lu Tien-Chang, Wang Shing-Chung, Liao Wei-Tsai, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    APPLIED PHYSICS EXPRESS   Vol. 4 ( 1 )   2011.1

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    DOI: 10.1143/APEX.4.012105

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  67. Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

    Sugiura Toko, Kim Eun-Hee, Honda Yoshio, Takagi Hiroyuki, Tsukamoto Takehiko, Andoh Hiroya, Yamaguchi Masahito, Sawaki Nobuhiko

    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS   Vol. 1399   2011

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    DOI: 10.1063/1.3666474

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  68. Achieving high-growth-rate in GaN homoepitaxy using high-density nitrogen radical source Reviewed

    Kawai Yohjiro, Chen Shang, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Kondo Hiroki, Hiramatsu Mineo, Kano Hiroyuki, Yamakawa Koji, Den Shoji, Hori Masaru

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

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    DOI: 10.1002/pssc.201000969

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  69. Raman spectroscopic study of residual strain and stress in GaN layer grown on Si substrates Reviewed

    杉浦 藤虎, 本田 善央, 岡本 明大, 高木 宏幸, 塚本 武彦, 安藤 浩哉

    豊田工業高等専門学校研究紀要   Vol. 42 ( 0 ) page: 19 - 22   2010

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    We have studied the residual strain and stress in semi-polar (1-101)GaN and conventional (0001)GaN grown on Si by means of Raman spectroscopy. By adopting the stress coefficients reported in the references, the residual strain of samples were deduced from the frequency shifts of the phonon modes in Raman spectra. As the results, it was found that the strain tensor of (1-101) GaN/Si was smaller than that of the (0001)GaN/Si in good agreement with the results obtained from the X-ray diffraction measurements.

    DOI: 10.20692/toyotakosenkiyo.kj00005889042

    CiNii Research

  70. [Congenital middle ear cholesteatoma: experience in 48 cases]. Reviewed

    Kojima H, Miyazaki H, Tanaka Y, Shiwa M, Honda Y, Moriyama H

    Nihon Jibiinkoka Gakkai kaiho   Vol. 106 ( 9 ) page: 856 - 65   2003.9

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    DOI: 10.3950/jibiinkoka.106.856

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  71. Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy Reviewed

    Kato Tomonobu, Honda Yoshio, Kawaguchi Yasutoshi, Yamaguchi Masahito, Sawaki Nobuhiko

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes   Vol. 40 ( 3B ) page: 1896 - 1898   2001

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    A GaN/AlGaN double heterostructure was fabricated on the (1101) facets of a GaN triangular structure prepared by selective area growth by metalorganic vapor phase epitaxy. The photoluminescence (PL) and cathode luminescence (CL) spectra were investigated to characterize the structure. It was found that the PL peak wavelength due to the GaN quantum well is dependent on the well thickness. However, the Al composition of the AlGaN layer is dependent on the position on the (1101) facet. The anomalous gradient of the composition is attributed to the difference in the diffusion coefficients of Al and Ga on the surface.

    DOI: 10.1143/jjap.40.1896

    CiNii Research

  72. Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy Reviewed

    Kawaguchi Yasutoshi, Honda Yoshio, Matsushima Hidetada, Yamaguchi Masahito, Hiramatsu Kazumasa, Sawaki Nobuhiko

    Japanese journal of applied physics. Pt. 2, Letters   Vol. 37 ( 8B ) page: L966 - L969   1998

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    Selective area growth (SAG) of GaN on (111) Si substrate was studied using AlGaN as an intermediate layer. A hexagonal dot with a (0001) plane on the top and of a 5 µm or a submicron size was obtained using a patterned dot structure of silicon dioxide (SiO<SUB>2</SUB>) mask. The facet structure revealed that the <11\=20> axis of hexagonal GaN is parallel to the <110> axis of the Si substrate. The cathodoluminescence (CL) spectrum at 133 K exhibited a strong near-band-edge emission band for the submicron dots, which suggests excellent crystallinity. Epitaxial lateral overgrowth (ELO) of GaN on the Si substrate is demonstrated.

    DOI: 10.1143/jjap.37.l966

    CiNii Research

  73. Pulsed-flow growth of polar, semipolar and nonpolar AlGaN Reviewed

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF MATERIALS CHEMISTRY C   Vol. 8 ( 25 ) page: 8668 - 8675   2020.7

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    DOI: 10.1039/d0tc01369b

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  74. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures Reviewed

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 7 ) page: .   2020.7

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  75. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering Reviewed

    Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 217 ( 14 )   2020.7

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    DOI: 10.1002/pssa.201900955

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  76. Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO Reviewed

    Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 6 ) page: .   2020.6

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  77. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Reviewed

    Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 539   page: .   2020.6

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  78. Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method Reviewed

    Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

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    DOI: 10.1002/pssb.201900553

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  79. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR Reviewed

    Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J, Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 116 ( 12 )   2020.3

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    DOI: 10.1063/1.5145017

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  80. Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN Reviewed

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 35 ( 3 )   2020.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/ab63f1

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  81. Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode Reviewed

    Sato Daiki, Honda Anna, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

    MICROELECTRONIC ENGINEERING   Vol. 223   2020.2

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    DOI: 10.1016/j.mee.2020.111229

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  82. Analysis of trimethylgallium decomposition by high-resolution mass spectrometry Reviewed

    Ye Zheng, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 2 )   2020.2

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    The decomposition of trimethylgallium (Ga(CH3)(3)) was examined under H-2 and N-2 atmospheres using a high-resolution (about 0.002 u) time-of-flight mass spectrometry system, which enabled the separation of N-2 and ethene (C2H4) signals. Under H-2 atmosphere, the main decomposition product was methane (CH4) formed by the hydrogenolysis of Ga(CH3)(3). However, under N-2 atmosphere, the main product is ethane (C2H6) at temperature lower than 660 degrees C. Above 660 degrees C, the C2H6 further decomposes into CH4, acetylene (C2H2) and C2H4, and the main components in the gas phase are C2H2 and C2H4 above 1000 degrees C. Since these are effective carbon dopants, the molar ratio of H-2 to the Ga(CH3)(3) raw material in the carrier gas should be maintained above 300 to inhibit the formation of hydrocarbons in N-2. (C) 2020 The Japan Society of Applied Physics

    DOI: 10.35848/1347-4065/ab6fb0

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  83. Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism Reviewed

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    2D MATERIALS   Vol. 7 ( 1 )   2020.1

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    We studied the nucleation and growth of hexagonal BN (h-BN) on AlN template on c-plane sapphire by metalorganic vapor phase epitaxy as functions of growth temperature, deposition time, and triethylboron (TEB) partial pressure. A lateral growth rate of about 25 nm min(-1) for h-BN nuclei was obtained by atomic force microscopy and a nucleation activation energy of 2.1 eV was extracted from the temperature dependence of the nucleation density. A large TEB flow rate strongly enhances the formation of h-BN nuclei. At a reduced TEB flow rate, we observed a significantly decreased nuclei density and a delay in nucleation due to TEB desorption. By fine tuning the growth parameters, single-crystalline multilayer h-BN was successfully formed on AlN surface, as confirmed by x-ray diffraction and transmission electron microscopy (TEM). The epitaxial relationship between h-BN and AlN was [0 0 0 1](h-BN) parallel to [0 0 0 1](AlN) and [1 0 -10](h-BN) parallel to [1 1 -20](AlN) from TEM and electron backscatter diffraction measurements. In addition, TEM showed that the initial h-BN layers are not parallel and tend to form half-domes. On those half-domes (cap-shaped-like) a 2D lateral growth sets on, resulting in a well-oriented 2D multilayer observed in TEM. Thus, the surface topography further develops to form a relatively flat surface without wrinkles and finally a typical hexagon-like wrinkled surface at thicker h-BN layers. Particularly, the small h-BN nuclei have dangling bonds at their periphery that can interact with the substrate, forming actual bonds with AlN. Hence the choice on the substrate is important, despite the basal planes of multilayer h-BN are bonded by a weak van der Waals force.

    DOI: 10.1088/2053-1583/ab46e6

    Web of Science

  84. Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire Reviewed

    Dinh Duc V, Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 34 ( 12 )   2019.12

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    DOI: 10.1088/1361-6641/ab4d2c

    Web of Science

  85. Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency. Reviewed

    Sandupatla A, Arulkumaran S, Ranjan K, Ng GI, Murmu PP, Kennedy J, Nitta S, Honda Y, Deki M, Amano H

    Sensors (Basel, Switzerland)   Vol. 19 ( 23 )   2019.11

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    DOI: 10.3390/s19235107

    PubMed

  86. Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties Reviewed

    Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SCIENTIFIC REPORTS   Vol. 9 ( 1 ) page: 15802   2019.11

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    DOI: 10.1038/s41598-019-52067-y

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    PubMed

  87. V-shaped dislocations in a GaN epitaxial layer on GaN substrate Reviewed

    Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

    AIP ADVANCES   Vol. 9 ( 9 )   2019.9

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    DOI: 10.1063/1.5114866

    Web of Science

  88. Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition Reviewed

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Torigoe Kazuhisa, Kushimoto Maki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 7 )   2019.7

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    DOI: 10.7567/1347-4065/ab2657

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  89. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth Reviewed

    Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 516   page: 63 - 66   2019.6

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    The decomposition of ammonia (NH3) in nitrogen (N-2) ambient was studied under non-equilibrium conditions similar to those in a metal organic vapor phase epitaxy (MOVPE) reactor during the epitaxial growth of group-III nitrides. The gas phase was sampled at different positions and analyzed using a time-of-flight mass spectrometry system with a high resolution (better than 0.002 u). Our results expand earlier findings. Even at the high temperature of 1200 degrees C, only 26% of NH3 decomposed in a clean metal-free reactor, whereas a higher ratio of NH3 decomposition was realized in the presence of stainless steel. The activation energy in the clean reactor was calculated to be 0.965 +/- 0.004 eV. These results demonstrate the capability of our setup and shed new light on the elucidation of the vapor phase growth mechanism of group III-nitrides by MOVPE.

    DOI: 10.1016/j.jcrysgro.2019.03.025

    Web of Science

  90. Frontiers of Nitride Semiconductor Research FOREWORD Reviewed

    Chichibu Shigefusa F, Kumagai Yoshinao, Kojima Kazunobu, Deura Momoko, Akiyama Toru, Arita Munetaka, Fujioka Hiroshi, Fujiwara Yasufumi, Hara Naoki, Hashizume Tamotsu, Hirayama Hideki, Holmes Mark, Honda Yoshio, Imura Masataka, Ishii Ryota, Ishitani Yoshihiro, Iwaya Motoaki, Kamiyama Satoshi, Kangawa Yoshihiro, Katayama Ryuji, Kawakami Yoichi, Kawamura Takahiro, Kobayashi Atsushi, Kuzuhara Masaaki, Matsumoto Koh, Mori Yusuke, Mukai Takashi, Murakami Hisashi, Murotani Hideaki, Nakazawa Satoshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab1411

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  91. Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers Reviewed

    Nan Hu, Dinh Duc V, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab1252

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  92. Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth Reviewed

    Liu Qiang, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab124e

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  93. Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285nm deep-ultraviolet LEDs grown on AlN templates having macrosteps Reviewed

    Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Ipponmatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 6 )   2019.6

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    DOI: 10.7567/1882-0786/ab21a9

    Web of Science

  94. Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019) Reviewed

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 514   page: 13 - 13   2019.5

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    DOI: 10.1016/j.jcrysgro.2019.02.058

    Web of Science

  95. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE Reviewed

    Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 512   page: 78 - 83   2019.4

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    DOI: 10.1016/j.jcrysgro.2019.02.013

    Web of Science

  96. Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method Reviewed

    Yamada Jumpei, Usami Shigeyoshi, Ueda Yuki, Honda Yoshio, Amano Hiroshi, Maruyama Takahiro, Naritsuka Shigeya

    Jpn. J. Appl. Phys.   Vol. 58 ( 4 )   2019.3

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    DOI: 10.7567/1347-4065/aafe70

  97. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy Reviewed

    Zhibin Liu, Shugo Nitta, Shigeyoshi Usami, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 509   page: 50 - 53   2019.3

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    Wafer trays with different gaps (the distance between the top of the pocket and the bottom of the wafer) were used to grow InGaN/GaN multiple quantum wells (MQWs) in a horizontal metalorganic vapor phase epitaxy (MOVPE) reactor. The numerical reactor simulation revealed that at the similar surface temperature the gas phase temperature around the wafer increases due to an increased wafer tray temperature. This increased gas phase temperature is expected to increase the effective V/III ratio by enhanced NH3 decomposition. Photoluminescence (PL) intensities of long-wavelength MQWs increased at the same indium content by the enhanced gas phase temperature, while the emission became narrow. This is related to a smoother topography at higher gas phase temperatures.

    DOI: 10.1016/j.jcrysgro.2018.12.007

    Web of Science

  98. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics Reviewed

    Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

    MATERIALS   Vol. 12 ( 5 )   2019.3

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    DOI: 10.3390/ma12050689

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    PubMed

  99. Morphological study of InGaN on GaN substrate by supersaturation Reviewed

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 508   page: 58 - 65   2019.2

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    DOI: 10.1016/j.jcrysgro.2018.12.028

    Web of Science

  100. How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire Reviewed

    Hu Nan, Dinh Duc V, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 507   page: 205 - 208   2019.2

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    DOI: 10.1016/j.jcrysgro.2018.11.013

    Web of Science

  101. Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown Reviewed

    Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

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    A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p-n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p-n diode with a simple edge termination that has a drift layer etched deeply and vertically. A device simulation revealed that the electric field was more relaxed at the device edge and applied uniformly in the entire device with increasing etching depth. We fabricated the simulated structure and succeeded in reducing the leakage current and improving the breakdown voltage. With this structure, a stable avalanche breakdown can be observed. (C) 2019 The Japan Society of Applied Physics

    DOI: 10.7567/1882-0786/aafdb9

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  102. Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps Reviewed

    Kojima K, Nagasawa Y, Hirano A, Ippommatsu M, Honda Y, Amano H, Akasaki I, Chichibu S. F

    APPLIED PHYSICS LETTERS   Vol. 114 ( 1 )   2019.1

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    DOI: 10.1063/1.5063735

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  103. 高感度電子線ホログラフィーによるGaN系半導体のドーパント濃度分布の観察 Reviewed

    仲野 靖孝, 本田 善央, 天野 浩, 松本 実子, 穴田 智史, 山本 和生, 石川 由加里, 平山 司, 安藤 悠人, 小倉 昌也, 田中 敦之

    まてりあ   Vol. 58 ( 2 ) page: 103-103 - 103   2019

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    DOI: 10.2320/materia.58.103

    CiNii Research

  104. Electronic structure analysis of core structures of threading dislocations in GaN Reviewed

        page: .   2019

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  105. Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method Reviewed

      Vol. 36 ( 6 )   2018.11

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    DOI: 10.1116/1.5048061

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  106. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy Reviewed

      Vol. 57 ( 10 )   2018.10

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    DOI: 10.7567/JJAP.57.105501

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  107. High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire Reviewed

      Vol. 498   page: 377 - 380   2018.9

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    DOI: 10.1016/j.jcrysgro.2018.07.015

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  108. Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition Reviewed

      Vol. 57 ( 9 )   2018.9

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    DOI: 10.7567/JJAP.57.091001

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  109. Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy Reviewed

      Vol. 12 ( 8 )   2018.8

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    DOI: 10.1002/pssr.201800124

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  110. Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering Reviewed

      Vol. 57 ( 7 )   2018.7

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    DOI: 10.7567/JJAP.57.070302

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  111. Study on the Main-Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN-Based DUV-LEDs Reviewed

      Vol. 215 ( 10 )   2018.5

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    DOI: 10.1002/pssa.201700525

    Web of Science

    Scopus

  112. m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates Reviewed

      Vol. 215 ( 9 )   2018.5

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    DOI: 10.1002/pssa.201700645

    Web of Science

    Scopus

  113. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy Reviewed

      Vol. 11 ( 5 )   2018.5

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    DOI: 10.7567/APEX.11.051002

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  114. Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching Reviewed

      Vol. 255 ( 5 )   2018.5

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    DOI: 10.1002/pssb.201700387

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  115. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate Reviewed

      Vol. 112 ( 18 )   2018.4

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    DOI: 10.1063/1.5024704

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  116. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy Reviewed International journal

      Vol. 482   page: 1 - 8   2018.1

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    DOI: 10.1016/j.jcrysgro.2017.10.036

    Web of Science

  117. Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes Reviewed

        page: 831-837   2018

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    Web of Science

  118. Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN Reviewed

      Vol. 86 ( 12 ) page: 41 - 49   2018

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    DOI: 10.1149/08612.0041ecst

    Web of Science

  119. Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes Reviewed

        page: 831-837   2018

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  120. Charge-to-time converting leading-edge discriminator for plastic-scintillator signals Reviewed International journal

      Vol. 875   page: 193 - 200   2017.12

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    DOI: 10.1016/j.nima.2017.09.040

    Web of Science

  121. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes Reviewed International journal

      Vol. 111 ( 12 )   2017.9

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    DOI: 10.1063/1.4994627

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  122. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations Reviewed International journal

      Vol. 10 ( 8 )   2017.8

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    DOI: 10.7567/APEX.10.082101

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  123. Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants Reviewed

      Vol. 254 ( 8 )   2017.8

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    DOI: 10.1002/pssb.201600722

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  124. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE Reviewed International journal

      Vol. 214 ( 8 )   2017.8

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    DOI: 10.1002/pssa.201600829

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  125. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes Reviewed International journal

      Vol. 214 ( 8 )   2017.8

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    DOI: 10.1002/pssa.201600837

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  126. Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system Reviewed International journal

      Vol. 254 ( 8 )   2017.8

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    DOI: 10.1002/pssb.201600737

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  127. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer Reviewed International journal

      Vol. 468   page: 866 - 869   2017.6

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    DOI: 10.1016/j.jcrysgro.2017.01.031

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  128. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer Reviewed International journal

      Vol. 468   page: 547 - 551   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.11.116

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  129. Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10(1)over-bar0) GaN homoepitaxial layers Reviewed International journal

      Vol. 468   page: 552 - 556   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.012

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  130. Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output Reviewed

      Vol. 56 ( 6 )   2017.6

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    DOI: 10.7567/JJAP.56.061002

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  131. Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer Reviewed International journal

      Vol. 468   page: 110 - 113   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.10.032

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  132. Annealing effect on threading dislocations in a GaN grown on Si substrate Reviewed International journal

      Vol. 468   page: 835 - 838   2017.6

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    DOI: 10.1016/j.jcrysgro.2017.01.001

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  133. III-nitride core-shell nanorod array on quartz substrates Reviewed

      Vol. 7   2017.3

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    DOI: 10.1038/srep45345

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  134. AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method Reviewed International journal

      Vol. 56 ( 1 )   2017.1

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    DOI: 10.7567/JJAP.56.01AD07

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  135. Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy Reviewed International journal

      Vol. 56 ( 1 )   2017.1

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    DOI: 10.7567/JJAP.56.01AD03

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  136. Development of Sustainable Smart Society based on Transformative Electronics Reviewed

        page: .   2017

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    Web of Science

  137. Development of Sustainable Smart Society based on Transformative Electronics Reviewed

        page: .   2017

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  138. Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer Reviewed International journal

      Vol. 454   page: 114 - 120   2016.11

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    DOI: 10.1016/j.jcrysgro.2016.09.004

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  139. Controlled morphology of regular GaN microrod arrays by a selective area growth with HVPE Reviewed International journal

      Vol. 447   page: 55 - 61   2016.8

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    DOI: 10.1016/j.jcrysgro.2016.05.008

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  140. Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study Reviewed International journal

      Vol. 55 ( 8 )   2016.8

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    To replace mercury lamps with AlGaN-based deep-ultraviolet (DUV) LEDs, a simple and low-cost package with increased light extraction efficiency (LEE) is indispensable. Therefore, resin encapsulation is considered to be a key technology. However, the photochemical reactions induced by DUV light cause serious problems, and conventional resins cannot be used. In the former part of this study, a comparison of a silicone resin and fluorine polymers was carried out in terms of their suitability for encapsulation, and we concluded that only one of the fluorine polymers can be used for encapsulation. In the latter part, the endurance of encapsulation using the selected fluorine polymer was investigated, and we confirmed that the selected fluorine polymer can guarantee a lifetime of over 6,000 h at a wavelength of 265 nm. Furthermore, a 3 × 4 array module of encapsulated dies on a simple AlN submount was fabricated, demonstrating the possibility of W/cm<sup>2</sup>-class lighting.

    DOI: 10.7567/JJAP.55.082101

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  141. Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering Reviewed International journal

      Vol. 55 ( 5 )   2016.5

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    Using an in situ laser absorption and scattering method, the surface roughness and incorporation of In in InGaN layers grown by metal organic vapor-phase epitaxy (MOVPE) were monitored. We observed that the laser light with energy higher than the GaN bandgap was fully absorbed in a GaN layer with a smooth film surface. On the other hand, we observed that the scattering laser light from the surface when the roughness of the InGaN surface increased owing to the formation of In droplets. Laser light with energy lower than the GaN bandgap was weakly absorbed by the GaN layer and was scattered at the back surface of the wafer. Furthermore, laser light intensity decreased during InGaN growth because of In incorporation. The threshold of trimethyl-In (TMIn) for the formation of In droplets as a function of growth temperature was determined using our in situ system. Moreover, we observed that the In droplets were removed by thermal or H<inf>2</inf>treatment. The results indicate that multiwavelength laser absorption and scattering enable the optimization of the growth conditions for In-rich InGaN.

    DOI: 10.7567/JJAP.55.05FD03

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  142. Growth of semipolar (1(1)over-bar01) high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001) Reviewed International journal

      Vol. 55 ( 5 )   2016.5

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    Low-toxity high-In-content InGaN is an attractive option for short-distance communications through plastic optical fibers because its performance is only slightly affected by temperature. However, its fabrication on the c-plane is impaired by In droplets and V pits, which form at low-growth temperature. On the other hand, unlike the c-plane, [Formula: see text] InGaN relaxes with tilting. Therefore, in this study, we first grew a high-In-content InGaN single layer, and then we fabricated an InGaN tilting layer between [Formula: see text] InGaN-based multiple quantum wells (MQWs) and GaN stripes/(001)Si. The emission wavelength increased with the InGaN tilting layer’s growth time because the strain was relaxed by misfit dislocations at the heterointerface. This layer also extended the emission peak of InGaN/GaN MQWs and increased the photoluminescence intensity with respect to that of a single-layered InGaN. Therefore, the InGaN tilting layer is effective for growing high-In-content [Formula: see text] InGaN MQWs.

    DOI: 10.7567/JJAP.55.05FA10

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  143. Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy Reviewed International journal

      Vol. 55 ( 5 )   2016.5

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    DOI: 10.7567/JJAP.55.05FC02

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  144. Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity Reviewed International journal

      Vol. 55 ( 5 )   2016.5

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    A thin p-type InGaN with a negative electron affinity (NEA) surface was used to measure the relaxation time of a surface charge limit (SCL) by irradiating rectangular laser beam pulses at changing time interval. The p-type InGaN film was grown by metal organic vapor phase epitaxy and the NEA activation was performed after the sample was heat cleaned. 13 nC per pulse with 10 ms width was obtained from the InGaN photocathode. The current decreased exponentially from the beginning of the pulse. The initial current value after the laser irradiation decreased with the time interval. As a result, the SCL relaxation time was estimated through the InGaN photocathode measurements at 100 ms.

    DOI: 10.7567/JJAP.55.05FH05

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  145. Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy Reviewed

      Vol. 55 ( 5 )   2016.5

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    DOI: 10.7567/JJAP.55.05FM01

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  146. Study of radiation detection properties of GaN pn diode Reviewed

      Vol. 55 ( 5 )   2016.5

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    DOI: 10.7567/JJAP.55.05FJ02

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  147. Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum Reviewed International journal

      Vol. 55 ( 5 )   2016.5

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    We report on the material and optical properties of core–shell InGaN layers grown on GaN nanorod arrays. The core–shell InGaN layers were well grown on polarization-reduced surfaces such as semipolar pyramids and nonpolar sidewalls. In addition, to compensate the biaxial strain between GaN and InGaN layers, we grew interlayers underneath a thick InGaN layer. Here, the interlayers were composed of multiple superlattice structures. We could observe that the indium composition of core–shell InGaN structures increased with the number of interlayers. This indicates that the absorption energy band of InGaN alloys can be better matched to the spectral irradiance of the solar spectrum in nature. We also implemented a simulation of Ga-polar and nonpolar InGaN-based solar cells based on the indium composition obtained from the experiments. The result showed that nonpolar InGaN solar cells had a much higher efficiency than Ga-polar InGaN solar cells with the same thickness of the absorption layer.

    DOI: 10.7567/JJAP.55.05FG03

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  148. Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy Reviewed International journal

      Vol. 55 ( 5 )   2016.5

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    In this paper, we discuss the influence of parameters such as type of carrier gas and NH<inf>3</inf>/HCl flow ratio on the growth of vertical GaN microstructures by selective-area growth (SAG) hydride vapor phase epitaxy (HVPE). On various strain-induced templates such as GaN/sapphire, GaN/Si, and AlN/Si, regular arrays of Ga-polar GaN microrods were properly achieved by adjusting the growth parameters. The photoluminescence and micro-Raman measurements reveal not only the crystal quality of the GaN microrods but also strain distribution. These results will give insight into the control of the morphology of GaN microrods in terms of the strain induced from templates in SAG-HVPE. The precisely controlled arrays of GaN microrods can be used for next-generation light-emitting diodes (LEDs) by realizing InGaN/GaN multi–quantum wells (MQWs) with a radial structure.

    DOI: 10.7567/JJAP.55.05FF03

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  149. Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer Reviewed International journal

      Vol. 55 ( 5 )   2016.5

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    Previously, we reported a growth method for GaN on SiC by metalorganic vapor phase epitaxy. By using a preflow trimethylaluminum treatment, the poor wetting problem of gallium on the SiC surface was alleviated, resulting in a 1.2-µm-thick crack-free GaN grown on an on-axis 6H-SiC(0001) substrate via an ultrathin AlGaN interlayer. In this study, the impact of the preflow trimethylaluminum treatment time is investigated to understand why a crack-free epilayer was realized. To demonstrate the electrical performance of devices formed by our technique, GaN/SiC vertical Schottky barrier diodes were fabricated and compared with GaN/AlN/SiC and GaN/GaN vertical Schottky barrier diodes. Compared with diodes including a high-resistance AlN interlayer, the series resistance of GaN/SiC Schottky barrier diodes incorporating the ultrathin interlayer with 5 s of TMAl treatment showed a marked reduction from 4.0 × 10<sup>7</sup>to 2.0 × 10<sup>−1</sup>Ω·cm<sup>2</sup>. The ultrathin interlayer growth technique is expected to be applied in future GaN/SiC hybrid high-power and high-frequency devices.

    DOI: 10.7567/JJAP.55.05FB06

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  150. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode Reviewed International journal

      Vol. 11 ( 1 ) page: 215   2016.4

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    DOI: 10.1186/s11671-016-1441-6

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    PubMed

  151. Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations Reviewed

      Vol. 55 ( 3 )   2016.3

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    Using a SiN<inf>x</inf>insertion layer to reduce dislocations, enhanced photovoltaic properties could be obtained in p–i–n InGaN/GaN heterojunction solar cell. To investigate the influence of the dislocations on the photovoltaic behaviors, a sample grown without SiN<inf>x</inf>insertion layer was identically prepared for comparison. From optical properties measurements, the reduction in the number of non-radiative centers and a stronger In localization effect was shown in the sample with SiN<inf>x</inf>insertion layer. However, the quantum confined stark effect was almost negligible in both the samples. Electrical properties measurement showed reduced saturation current and increased shunt resistance in the sample with SiN<inf>x</inf>insertion layer due to the reduced dislocation density. By comparing these results and using a numerical model, the influence of the dislocation density on the different photovoltaic properties such as open-circuit voltage and fill factor has been confirmed.

    DOI: 10.7567/JJAP.55.030306

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  152. Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells Reviewed International journal

      Vol. 49 ( 2 )   2016.1

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    DOI: 10.1088/0022-3727/49/2/025103

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  153. The interface analysis of GaN grown on 0 degrees off 6H-SiC with an ultra-thin buffer layer Reviewed

      Vol. 55 ( 1 )   2016.1

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    Previously, we reported a growth method by metalorganic vapor phase epitaxy using a single two-dimensional growth step, resulting in 1.2-µm crack-free GaN directly grown on 6H-SiC substrate. The introduction of Al-treatment prior to the standard GaN growth step resulted in improved surface wetting of gallium on the SiC substrate. Transmission electron microscope and energy dispersive spectrometer analysis of the epitaxial interface to the SiC determined that an ultra-thin AlGaN interlayer had formed measuring around 2–3 nm. We expect our growth technique can be applied to the fabrication of GaN/SiC high frequency and high power devices.

    DOI: 10.7567/JJAP.55.010303

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  154. Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition Reviewed International journal

      Vol. 18 ( 9 ) page: 1505 - 1514   2016

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    DOI: 10.1039/c5ce02056e

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  155. Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications Reviewed International journal

      Vol. 9926   2016

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    DOI: 10.1117/12.2235398

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  156. Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells Reviewed International journal

      Vol. 252 ( 5 ) page: 940 - 945   2015.5

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    DOI: 10.1002/pssb.201451491

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  157. Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed

      Vol. 8 ( 2 ) page: 022702   2015.2

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  158. Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed

      Vol. 8 ( 2 ) page: 022702   2015.2

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  159. Optically pumped lasing properties of (1(1)over-bar01) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed International journal

      Vol. 8 ( 2 )   2015.2

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    We demonstrated lasing action and investigated the optical properties of [Formula: see text] multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating [Formula: see text] InGaN MQW laser diodes on (001) Si.

    DOI: 10.7567/APEX.8.022702

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  160. Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region Reviewed International journal

      Vol. 11   page: 294 - 303   2015.1

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    DOI: 10.1016/j.nanoen.2014.11.003

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  161. Nature of yellow luminescence band in GaN grown on Si substrate Reviewed International journal

      Vol. 53 ( 11 )   2014.11

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    DOI: 10.7567/JJAP.53.11RC02

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  162. NEA半導体フォトカソードへの応用を目指したGaN系半導体の量子効率および耐久性の研究 (電子部品・材料) Reviewed International journal

    佐藤 大樹, 西谷 智博, 前川 拓也, 本田 善央, 天野 浩

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 114 ( 202 ) page: 49-54 - 54   2014.9

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:一般社団法人電子情報通信学会  

    負の電子親和力(Negative Electron Affinity:NEA)状態の表面を持つ半導体(NEA半導体フォトカソード)は、高性能電子ビーム源として素粒子実験分野に貢献してきたが、産業利用上、NEA表面の寿命問題を抱える。我々は、半導体のバンドギャップに着目し、NEA表面が得られた際の表面の電子親和力をより小さくすることでこの寿命問題の改善が可能であると考えた。そこで、NEA半導体フォトカソードに用いる半導体として、従来技術のp-GaAsに比べてバンドギャップの大きいp-GaN及びp-InGaNを作製した。作製したp-GaN及びp-InGaNサンプルによるNEA表面活性化実験では、セシウムの供給のみで表面のNEA状態が得られる可能性が示唆され、量子効率の寿命測定では、従来技術のp-GaAsに比べ、p-GaNで17倍、p-InGaNで7倍の長寿命化に成功した。

  163. Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask Reviewed International journal

      Vol. 53 ( 5 )   2014.5

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    DOI: 10.7567/JJAP.53.05FL01

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  164. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy Reviewed International journal

      Vol. 115 ( 9 )   2014.3

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    DOI: 10.1063/1.4867640

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  165. Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays Reviewed International journal

      Vol. 53 ( 3 )   2014.3

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    DOI: 10.7567/JJAP.53.030306

    Web of Science

  166. Novel activation process for Mg-implanted GaN Reviewed International journal

      Vol. 388   page: 112 - 115   2014.2

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    DOI: 10.1016/j.jcrysgro.2013.07.011

    Web of Science

  167. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching Reviewed International journal

      Vol. 22 ( 3 ) page: 3585 - 3592   2014.2

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    DOI: 10.1364/OE.22.003585

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    PubMed

  168. Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate Reviewed

        page: 90030E-90030E-6   2014

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  169. Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask Reviewed

      Vol. 53 ( 5S1 ) page: 05FL01   2014

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  170. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH< sub> 3</sub> interrupted etching Reviewed

      Vol. 22 ( 3 ) page: 3585-3592   2014

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  171. Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate Reviewed

      Vol. 11 ( 3‐4 ) page: 722-725   2014

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  172. Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays Reviewed

      Vol. 53 ( 3 ) page: 30306   2014

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  173. Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Reviewed

      Vol. 16 ( 11 ) page: 2273-2282   2014

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  174. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

      Vol. 11 ( 3‐4 ) page: 393-396   2014

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  175. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy Reviewed

      Vol. 115 ( 9 ) page: 94906   2014

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  176. Novel activation process for Mg-implanted GaN Reviewed

      Vol. 388   page: 112-115   2014

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  177. Recombination dynamics and internal quantum efficiency in InGaN nanowires Reviewed

      Vol. 11 ( 3-4 ) page: 652 - 655   2014

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    DOI: 10.1002/pssc.201300437

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  178. Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate Reviewed International journal

      Vol. 9003   2014

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    DOI: 10.1117/12.2038764

    Web of Science

  179. Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Reviewed International journal

      Vol. 16 ( 11 ) page: 2273 - 2282   2014

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/c3ce42266f

    Web of Science

  180. Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate Reviewed International journal

      Vol. 11 ( 3-4 ) page: 722 - 725   2014

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1002/pssc.201300470

    Web of Science

  181. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

      Vol. 11 ( 3-4 ) page: 393 - 396   2014

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    DOI: 10.1002/pssc.201300670

    Web of Science

  182. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

      Vol. 11 ( 3‐4 ) page: 393-396   2014

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  183. Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate Reviewed

        page: 90030E-90030E-6   2014

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  184. Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask Reviewed

      Vol. 53 ( 5S1 ) page: 05FL01   2014

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    Language:English   Publishing type:Research paper (scientific journal)  

  185. Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate Reviewed

      Vol. 11 ( 3‐4 ) page: 722-725   2014

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  186. Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays Reviewed

      Vol. 53 ( 3 ) page: 30306   2014

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  187. Novel activation process for Mg-implanted GaN Reviewed

      Vol. 388   page: 112-115   2014

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    Language:English   Publishing type:Research paper (scientific journal)  

  188. Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Reviewed

      Vol. 16 ( 11 ) page: 2273-2282   2014

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    Language:English   Publishing type:Research paper (scientific journal)  

  189. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy Reviewed

      Vol. 115 ( 9 ) page: 94906   2014

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    Language:English   Publishing type:Research paper (scientific journal)  

  190. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH< sub> 3</sub> interrupted etching Reviewed

      Vol. 22 ( 3 ) page: 3585-3592   2014

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  191. MOVPE法によるGaN及びAlGaNへのCドーピングに関する研究 (レーザ・量子エレクトロニクス) Reviewed

    若杉 侑矢, 本田 善央, 天野 浩

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 331 ) page: 47 - 50   2013.11

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    MOVPE法を用いてGaN及びAlGaNへのMgとCの同時ドーピングを行い、電気的、光学的特性を評価した。GaNへの同時ドーピングでは比較的低濃度のCドーピングにより正孔密度の増加が確認できたが、AlGaNにおいてはC_2H_2流量増加に伴い正孔密度は減少した。cathodeluminescence(CL)測定により、全ての試料で440nm付近の発光を確認した。GaNへのMgとCのδドーピングを行った試料に対して同様の測定を行った。MgとCの同時δドーピングは通常のMgドーピングよりも高い正孔密度を示した。

  192. MOVPE法によるGaN及びAlGaNへのCドーピングに関する研究 (電子部品・材料) Reviewed

    若杉 侑矢, 本田 善央, 天野 浩

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 330 ) page: 47 - 50   2013.11

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    MOVPE法を用いてGaN及びAlGaNへのMgとCの同時ドーピングを行い、電気的、光学的特性を評価した。GaNへの同時ドーピングでは比較的低濃度のCドーピングにより正孔密度の増加が確認できたが、AlGaNにおいてはC_2H_2流量増加に伴い正孔密度は減少した。cathodeluminescence(CL)測定により、全ての試料で440nm付近の発光を確認した。GaNへのMgとCのδドーピングを行った試料に対して同様の測定を行った。MgとCの同時δドーピングは通常のMgドーピングよりも高い正孔密度を示した。

  193. MOVPE法によるGaN及びAlGaNへのCドーピングに関する研究 (電子デバイス) Reviewed

    若杉 侑矢, 本田 善央, 天野 浩

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 329 ) page: 47 - 50   2013.11

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:一般社団法人電子情報通信学会  

    MOVPE法を用いてGaN及びAlGaNへのMgとCの同時ドーピングを行い、電気的、光学的特性を評価した。GaNへの同時ドーピングでは比較的低濃度のCドーピングにより正孔密度の増加が確認できたが、AlGaNにおいてはC_2H_2流量増加に伴い正孔密度は減少した。cathodeluminescence(CL)測定により、全ての試料で440nm付近の発光を確認した。GaNへのMgとCのδドーピングを行った試料に対して同様の測定を行った。MgとCの同時δドーピングは通常のMgドーピングよりも高い正孔密度を示した。

  194. 高輝度電子ビーム源を目指したNEA表面p-GaNの量子効率 (レーザ・量子エレクトロニクス) Reviewed

    前川 拓也, 本田 善央, 天野 浩, 西谷 智博

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 331 ) page: 43 - 46   2013.11

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    我々は、負の電子親和力を持つ半導体表面を用いた電子源(NEA半導体フォトカソード電子源)の高輝度、高耐久化を目指して、p-GaN半導体を用いた機能性表面の寿命に対する電子源の高輝度条件を検討した。超高真空中でp-GaN基板に対してNEA表面活性化を行った後、その量子効率の波長依存性及びその寿命の測定実験を行った。その結果から、p-GaN基板は、従来技術のp-GaAs基板に比べて20倍以上寿命が長く、より高耐久性能を持つことが分かった。また、表面機能が低下するに連れて、バンドギャップエネルギー以下の励起エネルギーでの量子効率が優先的に減少することが分かった。これらの結果より、p-GaN基板を用いたNEA半導体フォトカソード電子源は、高耐久である一方で、表面機能が劣化した状態がより電子ビーム源として単色化に適していることを明らかにした。

  195. 高輝度電子ビーム源を目指したNEA表面p-GaNの量子効率 (電子部品・材料) Reviewed

    前川 拓也, 本田 善央, 天野 浩, 西谷 智博

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 330 ) page: 43 - 46   2013.11

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    我々は、負の電子親和力を持つ半導体表面を用いた電子源(NEA半導体フォトカソード電子源)の高輝度、高耐久化を目指して、p-GaN半導体を用いた機能性表面の寿命に対する電子源の高輝度条件を検討した。超高真空中でp-GaN基板に対してNEA表面活性化を行った後、その量子効率の波長依存性及びその寿命の測定実験を行った。その結果から、p-GaN基板は、従来技術のp-GaAs基板に比べて20倍以上寿命が長く、より高耐久性能を持つことが分かった。また、表面機能が低下するに連れて、バンドギャップエネルギー以下の励起エネルギーでの量子効率が優先的に減少することが分かった。これらの結果より、p-GaN基板を用いたNEA半導体フォトカソード電子源は、高耐久である一方で、表面機能が劣化した状態がより電子ビーム源として単色化に適していることを明らかにした。

  196. 高輝度電子ビーム源を目指したNEA表面p-GaNの量子効率 (電子デバイス) Reviewed

    前川 拓也, 本田 善央, 天野 浩, 西谷 智博

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 113 ( 329 ) page: 43 - 46   2013.11

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:一般社団法人電子情報通信学会  

    我々は、負の電子親和力を持つ半導体表面を用いた電子源(NEA半導体フォトカソード電子源)の高輝度、高耐久化を目指して、p-GaN半導体を用いた機能性表面の寿命に対する電子源の高輝度条件を検討した。超高真空中でp-GaN基板に対してNEA表面活性化を行った後、その量子効率の波長依存性及びその寿命の測定実験を行った。その結果から、p-GaN基板は、従来技術のp-GaAs基板に比べて20倍以上寿命が長く、より高耐久性能を持つことが分かった。また、表面機能が低下するに連れて、バンドギャップエネルギー以下の励起エネルギーでの量子効率が優先的に減少することが分かった。これらの結果より、p-GaN基板を用いたNEA半導体フォトカソード電子源は、高耐久である一方で、表面機能が劣化した状態がより電子ビーム源として単色化に適していることを明らかにした。

  197. Fabrication of InGaN/GaN Multiple Quantum Wells on (1(1)over-bar01) GaN Reviewed

    Tanikawa Tomoyuki, Sano Tomotaka, Kushimoto Maki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JC05

    Web of Science

  198. High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate Reviewed

    Sano Tomotaka, Doi Tomohiro, Inada Shunko Albano, Sugiyama Tomohiko, Honda Yoshio, Amano Hiroshi, Yoshino Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JK09

    Web of Science

  199. Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer Reviewed

    Yamada Takaya, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JB16

    Web of Science

  200. GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy Reviewed

    Nakagawa Shinta, Tabata Takuya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JE07

    Web of Science

  201. Stacking Faults and Luminescence Property of InGaN Nanowires Reviewed

    Tabata Takuya, Paek Jihyun, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JE06

    Web of Science

  202. Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer Reviewed

    Ohata Toshiya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JB11

    Web of Science

  203. Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy Reviewed

    Doi Tomohiro, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JB14

    Web of Science

  204. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

    K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, and H. Amano

    phys. stat. sol. (c)   Vol. 10 ( 3 ) page: 369-372   2013.3

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  205. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

    K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, and H. Amano

    phys. stat. sol. (c)   Vol. 10 ( 3 ) page: 369-372   2013.3

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  206. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

    K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, H. Amano

    phys. stat. sol. (c)   Vol. 10 ( 3 ) page: 369-372   2013.3

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  207. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

    K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, H. Amano

    phys. stat. sol. (c)   Vol. 10 ( 3 ) page: 369-372   2013.3

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  208. Growth of GaN on Si (111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer Reviewed

    Yamada, Takaya; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB16   2013

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  209. Fabrication of InGaN/GaN Multiple Quantum Wells on (1bar 101) GaN Reviewed

    Tanikawa, Tomoyuki; Sano, Tomotaka; Kushimoto, Maki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JC05   2013

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  210. Stacking Faults and Luminescence Property of InGaN Nanowires Reviewed

    Tabata, Takuya; Paek, Jihyun; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JE06   2013

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  211. Effects of nano-and microscale SiO2 masks on the growth of a-plane GaN layers on r-plane sapphire Reviewed

    Son, Ji-Su; Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Seo, Yong Gon; Hwang, Sung-Min; Baik, Kwang Hyeon;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JC04   2013

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  212. Characteristics of< i> a</i>-plane GaN films grown on optimized silicon-dioxide-patterned< i> r</i>-plane sapphire substrates Reviewed

    Son, Ji-Su; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Baik, Kwang Hyeon; Seo, Yong Gon; Hwang, Sung-Min;

    Thin Solid Films   Vol. 546   page: 108-113   2013

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  213. Defects generation and annihilation in GaN grown on patterned silicon substrate Reviewed

    Sawaki, N; Ito, S; Nakagita, T; Iwata, H; Tanikawa, T; Irie, M; Honda, Y; Yamaguchi, M; Amano, H;

    SPIE OPTO     page: 86250K-86250K-6   2013

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  214. High internal quantum efficiency blue-green light-emitting diode with small efficiency droop fabricated on low dislocation density GaN substrate Reviewed

    Sano, Tomotaka; Doi, Tomohiro; Inada, Shunko Albano; Sugiyama, Tomohiko; Honda, Yoshio; Amano, Hiroshi; Yoshino, Takashi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JK09   2013

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  215. Growth mode and threading dislocation behavior of GaN films grown on patterned sapphire substrate with radial stripe pattern Reviewed

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB09   2013

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  216. Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer Reviewed

    Ohata, Toshiya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB11   2013

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  217. GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy Reviewed

    Nakagawa, Shinta; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JE07   2013

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  218. Effects of exciton localization on internal quantum efficiency of InGaN nanowires Reviewed

    Murotani, Hideaki; Yamada, Yoichi; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Journal of Applied Physics   Vol. 114 ( 15 ) page: 153506   2013

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  219. GaN Overgrowth on Thermally Etched Nanoporous GaN Template Reviewed

    Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB03   2013

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  220. Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy Reviewed

    Doi, Tomohiro; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB14   2013

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  221. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN Reviewed

    Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 5R ) page: 50001   2013

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  222. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

    Okuno Koji, Oshio Takahide, Shibata Naoki, Honda Yoshio, Yamaguchi Masahito, Tanaka Shigeyasu, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3   Vol. 10 ( 3 ) page: 369 - 372   2013

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    DOI: 10.1002/pssc.201200587

    Web of Science

  223. Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer Reviewed

    Ohata, Toshiya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB11   2013

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  224. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN Reviewed

    Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 5R ) page: 50001   2013

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  225. Stacking Faults and Luminescence Property of InGaN Nanowires Reviewed

    Tabata, Takuya, Paek, Jihyun, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JE06   2013

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  226. Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy Reviewed

    Doi, Tomohiro, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB14   2013

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  227. Characteristics of< i> a</i>-plane GaN films grown on optimized silicon-dioxide-patterned< i> r</i>-plane sapphire substrates Reviewed

    Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Baik, Kwang Hyeon, Seo, Yong Gon, Hwang, Sung-Min

    Thin Solid Films   Vol. 546   page: 108-113   2013

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  228. Growth of GaN on Si (111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer Reviewed

    Yamada, Takaya, Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB16   2013

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  229. Growth mode and threading dislocation behavior of GaN films grown on patterned sapphire substrate with radial stripe pattern Reviewed

    Okuno, Koji, Oshio, Takahide, Shibata, Naoki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB09   2013

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  230. GaN Overgrowth on Thermally Etched Nanoporous GaN Template Reviewed

    Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB03   2013

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  231. GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy Reviewed

    Nakagawa, Shinta, Tabata, Takuya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JE07   2013

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  232. Fabrication of InGaN/GaN Multiple Quantum Wells on (1bar 101) GaN Reviewed

    Tanikawa, Tomoyuki, Sano, Tomotaka, Kushimoto, Maki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JC05   2013

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  233. Effects of nano-and microscale SiO2 masks on the growth of a-plane GaN layers on r-plane sapphire Reviewed

    Son, Ji-Su, Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Seo, Yong Gon, Hwang, Sung-Min, Baik, Kwang Hyeon

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JC04   2013

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  234. Effects of exciton localization on internal quantum efficiency of InGaN nanowires Reviewed

    Murotani, Hideaki, Yamada, Yoichi, Tabata, Takuya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Journal of Applied Physics   Vol. 114 ( 15 ) page: 153506   2013

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    Language:English   Publishing type:Research paper (scientific journal)  

  235. Defects generation and annihilation in GaN grown on patterned silicon substrate Reviewed

    Sawaki, N, Ito, S, Nakagita, T, Iwata, H, Tanikawa, T, Irie, M, Honda, Y, Yamaguchi, M, Amano, H

    SPIE OPTO     page: 86250K-86250K-6   2013

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  236. High internal quantum efficiency blue-green light-emitting diode with small efficiency droop fabricated on low dislocation density GaN substrate Reviewed

    Sano, Tomotaka, Doi, Tomohiro, Inada, Shunko Albano, Sugiyama, Tomohiko, Honda, Yoshio, Amano, Hiroshi, Yoshino, Takashi

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JK09   2013

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  237. Effects of low energy e-beam irradiation on cathodoluminescence from GaN Reviewed

    S. Suihkonen, H. Nykänen, T. Tanikawa, M. Yamaguchi, Y. Honda, and H. Amano

    phys. stat. sol. (a)   Vol. 210 ( 2 ) page: 383-385   2012.12

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  238. Effects of low energy e-beam irradiation on cathodoluminescence from GaN Reviewed

    S. Suihkonen, H. Nykänen, T. Tanikawa, M. Yamaguchi, Y. Honda, H. Amano

    phys. stat. sol. (a)   Vol. 210 ( 2 ) page: 383-385   2012.12

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  239. Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Reviewed

    KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

    IEICE technical report. Electron devices   Vol. 112 ( 32 ) page: 15 - 18   2012.5

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    We grew high-quality semipolar (1-101) GaN stripes on a Si substrate by selective area growth and regrew InGaN/GaN MQW on these stripes with MOVPE. The PL peak wavelength at 300 K and InGaN well thickness for the obtained samples were 435-590 nm and 2-9 nm, respectively. In PL measurements from the surface, we found that a shorter wavelength and thinner well sample have PL polarization perpendicular to the c axis. On the other hand, as the PL wavelength is longer and/or the well is thicker, the PL polarization shifts from perpendicular to parallel. In the PL measurement from the (11 -22) edge surface of the sample with shorter wavelength, we observed the narrowing of PL spectrum. In addition, the parallel component of PL polarization increased with increase in well thickness. Therefore, we can control the direction of polarization by managing well thickness and indium composition and apply to make a LD structure.

  240. Polarization properties in InGaN/GaN multiple quantum well on semipolar(1-101)GaN/Si Reviewed

    KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

    IEICE technical report. Component parts and materials   Vol. 112 ( 33 ) page: 15 - 18   2012.5

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    We grew high-quality semipolar (1-101) GaN stripes on a Si substrate by selective area growth and regrew InGaN/GaN MQW on these stripes with MOVPE. The PL peak wavelength at 300 K and InGaN well thickness for the obtained samples were 435-590 nm and 2-9 nm, respectively. In PL measurements from the surface, we found that a shorter wavelength and thinner well sample have PL polarization perpendicular to the c axis. On the other hand, as the PL wavelength is longer and/or the well is thicker, the PL polarization shifts from perpendicular to parallel. In the PL measurement from the (11 -22) edge surface of the sample with shorter wavelength, we observed the narrowing of PL spectrum. In addition, the parallel component of PL polarization increased with increase in well thickness. Therefore, we can control the direction of polarization by managing well thickness and indium composition and apply to make a LD structure.

  241. Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Reviewed

    KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

      Vol. 112 ( 33 ) page: 15 - 18   2012.5

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  242. Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Reviewed

    KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

    Technical report of IEICE. SDM   Vol. 112 ( 34 ) page: 15 - 18   2012.5

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    We grew high-quality semipolar (1-101) GaN stripes on a Si substrate by selective area growth and regrew InGaN/GaN MQW on these stripes with MOVPE. The PL peak wavelength at 300 K and InGaN well thickness for the obtained samples were 435-590 nm and 2-9 nm, respectively. In PL measurements from the surface, we found that a shorter wavelength and thinner well sample have PL polarization perpendicular to the c axis. On the other hand, as the PL wavelength is longer and/or the well is thicker, the PL polarization shifts from perpendicular to parallel. In the PL measurement from the (11 -22) edge surface of the sample with shorter wavelength, we observed the narrowing of PL spectrum. In addition, the parallel component of PL polarization increased with increase in well thickness. Therefore, we can control the direction of polarization by managing well thickness and indium composition and apply to make a LD structure.

  243. Strain relaxation in thick (1-101)InGaN grown on GaN/Si substrate Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    phys. stat. sol. (b)   Vol. 249 ( 3 ) page: 468–471   2012.3

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  244. Strain relaxation in thick (1-101)InGaN grown on GaN/Si substrate Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

    phys. stat. sol. (b)   Vol. 249 ( 3 ) page: 468–471   2012.3

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  245. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

    T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 646–649   2012.3

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  246. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

    T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 646–649   2012.3

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  247. Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate Reviewed

    T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, and Y. Mori

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 875–878   2012.3

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  248. Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate Reviewed

    T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, Y. Mori

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 875–878   2012.3

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  249. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

    T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 480–483   2012.3

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  250. A local vibration mode in a carbon doped (1-101)AlGaN Reviewed

    N. Sawaki, K. Hagiwara, K. Yamashita, N. Koide, Y. Honda, M. Yamaguchi, and H. Amano

    SPIE   Vol. 8262   page: 82620D   2012.3

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  251. A local vibration mode in a carbon doped (1-101)AlGaN Reviewed

    N. Sawaki, K. Hagiwara, K. Yamashita, N. Koide, Y. Honda, M. Yamaguchi, H. Amano

    SPIE   Vol. 8262   page: 82620D   2012.3

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  252. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

    T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 480–483   2012.3

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  253. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

    T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 646–649   2012.3

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  254. Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate Reviewed

    Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Sawaki Nobuhiko

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 249 ( 3 ) page: 468 - 471   2012.3

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    DOI: 10.1002/pssb.201100445

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  255. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

    T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 646–649   2012.3

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  256. Impurity incorporation in semipolar (1-1 0 1) GaN grown on an Si substrate Reviewed

    Sawaki Nobuhiko, Hagiwara Kiyotaka, Hikosaka Toshiki, Honda Yoshio

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 27 ( 2 )   2012.2

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    DOI: 10.1088/0268-1242/27/2/024006

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  257. Impurity incorporation in semipolar (1-101) GaN grown on an Si substrate Reviewed

    N. Sawaki, K. Hagiwara, T. Hikosaka, and Y. Honda

    Semicond. Sci. Technol.   Vol. 27   page: 024006_1-024006_5   2012.1

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  258. Impurity incorporation in semipolar (1-101) GaN grown on an Si substrate Reviewed

    N. Sawaki, K. Hagiwara, T. Hikosaka, Y. Honda

    Semicond. Sci. Technol.   Vol. 27   page: 024006_1-024006_5   2012.1

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  259. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

    Tabata Takuya, Paek Jihyun, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   Vol. 9 ( 3-4 ) page: 646 - 649   2012

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    DOI: 10.1002/pssc.201100446

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  260. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

    Mitsunari Tadashi, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   Vol. 9 ( 3-4 ) page: 480 - 483   2012

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    DOI: 10.1002/pssc.201100502

    Web of Science

  261. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

    T. Inazu, S. Fukahori, C. Pernot, M. H. Kim, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 12 ) page: 122101_1-122101_3   2011.12

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  262. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

    T. Inazu, S. Fukahori, C. Pernot, M. H. Kim, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, I. Akasaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 12 ) page: 122101_1-122101_3   2011.12

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  263. Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

    T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, and N. Sawaki

    AIP Conf. Proc.   Vol. 1399   page: 503-504   2011.12

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  264. Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

    T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, and N. Sawaki

    AIP Conf. Proc.   Vol. 1399   page: 503-504   2011.12

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  265. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

    Inazu Tetsuhiko, Fukahori Shinya, Pernot Cyril, Kim Myung Hee, Fujita Takehiko, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Yamaguchi Masahito, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 12 )   2011.12

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    DOI: 10.1143/JJAP.50.122101

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  266. Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

    T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, N. Sawaki

    AIP Conf. Proc.   Vol. 1399   page: 503-504   2011.12

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  267. Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

    T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, N. Sawaki

    AIP Conf. Proc.   Vol. 1399   page: 503-504   2011.12

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  268. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    Kim Myunghee, Fujita Takehiko, Fukahori Shinya, INAZU Tetsuhiko, PERNOT Cyril, NAGASAWA Yosuke, HIRANO Akira, IPPOMMATSU Masamichi, IWAYA Motoaki, TAKEUCHI Tetsuya, KAMIYAMA Satoshi, YAMAGUCHI Masahito, HONDA Yoshio, AMANO Hiroshi, AKASAKI Isamu

    Applied physics express   Vol. 4 ( 9 ) page: "092102 - 1"-"092102-3"   2011.9

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  269. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    Kim Myunghee, Fujita Takehiko, Fukahori Shinya, Inazu Tetsuhiko, Pernot Cyril, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Yamaguchi Masahito, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

    APPLIED PHYSICS EXPRESS   Vol. 4 ( 9 )   2011.9

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    DOI: 10.1143/APEX.4.092102

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  270. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki

    Appl. Phys. Express   Vol. 4 ( 9 ) page: 092102_1-092102_3   2011.8

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  271. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki

    Appl. Phys. Express   Vol. 4 ( 9 ) page: 092102_1-092102_3   2011.8

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  272. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, I. Akasaki

    Appl. Phys. Express   Vol. 4 ( 9 ) page: 092102_1-092102_3   2011.8

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  273. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, I. Akasaki

    Appl. Phys. Express   Vol. 4 ( 9 ) page: 092102_1-092102_3   2011.8

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  274. (1-101)GaN/Si上InGaN厚膜のMOVPE成長

    TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, SAWAKI Nobuhiko

    IEICE technical report   Vol. 111 ( 44 ) page: 63 - 66   2011.5

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    We demonstrated thick InGaN growth on (1-101)GaN/Si. The grown samples had relative smooth surface with RMS value of less than 10nm. From X-ray reciprocal space mapping, InGaN layer showed incoherent growth. First, the lattice relaxation occurred by generation of misfit dislocations between InGaN/GaN interface and inclined along <0001> projection. At a high indium content, a high density of misfit dislocations was generated, resulted in a larger inclination. Along <11-20> direction, InGaN lattice relaxation only occurred along the in-plane direction.

  275. RF-MBE法による(111)Si基板上へのInGaNナノワイヤ成長

    田畑 拓也, 白 知鉉, 本田 善央, 山口 雅史, 天野 浩

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   Vol. 111 ( 46 ) page: 45 - 48   2011.5

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    従来のプレーナ型量子井戸構造と比較してInGaNナノワイヤは可視光長波長領域において、より優れた発光特性を示すと予想される。本研究では、RF-MBE法により(111)Si基板上にIn/(In+Ga)フラックス比および成長温度を変化させてInGaNナノワイヤの成長を行った。成長温度を固定した場合、Inフラックス比が大きくなるほどナノワイヤにおけるIn組成の増大とともにフォトルミネッセンス(PL)ピーク波長は長波長側へシフトした。また、成長温度が高くなるにつれて、PLピーク波長は短波長側へシフトし、PL強度は大きくなった。これは成長温度が高くなるにつれてInの脱離が多くなったこと、およびInGaNナノワイヤの結晶性が向上したことが原因として考えられる。しかし、PLスペクトルの温度依存性からInGaNナノワイヤの内部量子効率を見積もると18%程度であった。これはSTEM像において確認された積層欠陥が原因の1つに挙げられる。

  276. RF-MBE法による(111)Si基板上へのInGaNナノワイヤ成長

    田畑 拓也, 白 知鉉, 本田 善央, 山口 雅史, 天野 浩

    電子情報通信学会技術研究報告. ED, 電子デバイス   Vol. 111 ( 44 ) page: 45 - 48   2011.5

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    従来のプレーナ型量子井戸構造と比較してInGaNナノワイヤは可視光長波長領域において、より優れた発光特性を示すと予想される。本研究では、RF-MBE法により(111)Si基板上にIn/(In+Ga)フラックス比および成長温度を変化させてInGaNナノワイヤの成長を行った。成長温度を固定した場合、Inフラックス比が大きくなるほどナノワイヤにおけるIn組成の増大とともにフォトルミネッセンス(PL)ピーク波長は長波長側へシフトした。また、成長温度が高くなるにつれて、PLピーク波長は短波長側へシフトし、PL強度は大きくなった。これは成長温度が高くなるにつれてInの脱離が多くなったこと、およびInGaNナノワイヤの結晶性が向上したことが原因として考えられる。しかし、PLスペクトルの温度依存性からInGaNナノワイヤの内部量子効率を見積もると18%程度であった。これはSTEM像において確認された積層欠陥が原因の1つに挙げられる。

  277. RF-MBE法による(111)Si基板上へのInGaNナノワイヤ成長

    田畑 拓也, 白 知鉉, 本田 善央, 山口 雅史, 天野 浩

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   Vol. 111 ( 45 ) page: 45 - 48   2011.5

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    従来のプレーナ型量子井戸構造と比較してInGaNナノワイヤは可視光長波長領域において、より優れた発光特性を示すと予想される。本研究では、RF-MBE法により(111)Si基板上にIn/(In+Ga)フラックス比および成長温度を変化させてInGaNナノワイヤの成長を行った。成長温度を固定した場合、Inフラックス比が大きくなるほどナノワイヤにおけるIn組成の増大とともにフォトルミネッセンス(PL)ピーク波長は長波長側へシフトした。また、成長温度が高くなるにつれて、PLピーク波長は短波長側へシフトし、PL強度は大きくなった。これは成長温度が高くなるにつれてInの脱離が多くなったこと、およびInGaNナノワイヤの結晶性が向上したことが原因として考えられる。しかし、PLスペクトルの温度依存性からInGaNナノワイヤの内部量子効率を見積もると18%程度であった。これはSTEM像において確認された積層欠陥が原因の1つに挙げられる。

  278. GaN系HFETsの電流コラプスの測定 : 非極性a面GaN基板上HFET及びc-GaN基板上p-GaNゲートを用いたノーマリーオフ型JHFET

    SUGIYAMA T., HONDA Y., YAMAGUCHI M., AMANO H., ISOBE Y., OSHIMURA Y., IWAYA M., TAKEUCHI T., KAMIYAMA S., AKASAKI I., IMADE M., KITAOKA Y., MORI Y.

    IEICE technical report   Vol. 111 ( 46 ) page: 175 - 178   2011.5

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    We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing a high V_<th> and a small current collapse than c-plane HFETs. We also measured current collapse in normally off mode AlGaN/GaN JHFETs with a p-GaN gate. The large current collapse was observed in unpassivated sample, because AlGaN barrier of JHFETs was exposed to air by dry etching. On the other hand current collapse in the SiNx-passivated JHFETs is small and almost the same as that in as-grown HFETs.

  279. GaN系HFETsの電流コラプスの測定 : 非極性a面GaN基板上HFET及びc-GaN基板上p-GaNゲートを用いたノーマリーオフ型JHFET

    SUGIYAMA T., HONDA Y., YAMAGUCHI M., AMANO H., ISOBE Y., OSHIMURA Y., IWAYA M., TAKEUCHI T., KAMIYAMA S., AKASAKI I., IMADE M., KITAOKA Y., MORI Y.

    IEICE technical report   Vol. 111 ( 45 ) page: 175 - 178   2011.5

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    We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing a high V_<th> and a small current collapse than c-plane HFETs. We also measured current collapse in normally off mode AlGaN/GaN JHFETs with a p-GaN gate. The large current collapse was observed in unpassivated sample, because AlGaN barrier of JHFETs was exposed to air by dry etching. On the other hand current collapse in the SiNx-passivated JHFETs is small and almost the same as that in as-grown HFETs.

  280. GaN系HFETsの電流コラプスの測定 : 非極性a面GaN基板上HFET及びc-GaN基板上p-GaNゲートを用いたノーマリーオフ型JHFET

    杉山 貴之, 本田 善央, 山口 雅史, 天野 浩, 磯部 康裕, 押村 吉徳, 岩谷 素顕, 竹内 哲也, 上山 智, 赤崎 勇, 今出 完, 北岡 康夫, 森 勇介

    電子情報通信学会技術研究報告. ED, 電子デバイス   Vol. 111 ( 44 ) page: 175 - 178   2011.5

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    c面および非極性a面GaN基板上AlGaN/GaN HFETの電流コラプスを測定した。a-HFETはc面上のHFETsに比べ高い閾値電圧と電流コラプス耐性の両立に優れることを実証した。また、p-GaNゲートを用いたc面ノーマリーオフ型JHFETについても電流コラプスの測定を行った、ドライエッチングによって露出されたAlGaN表面のデバイスでは電流コラプスが極めて大きいが、SiNパッシベーションによって、as-grownで同じ組成・膜厚を有するAlGaNバリアのノーマリーオフ型HFETsと同程度まで電流コラプス耐性が向上した。

  281. AlGaN系紫外発光素子の通電特性 : UV-LEDの劣化メカニズム

    朴 貴珍, 杉山 貴之, 谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 稲津 哲彦, 藤田 武彦, ペルノー シリル, 平野 光

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   Vol. 111 ( 46 ) page: 123 - 126   2011.5

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    長時間・大電流駆動によるAlGaN系紫外発光素子の通電特性の変化から発光効率とリーク電流成分の増大の関連性、また、発光層への注入効率とリーク成分の関係性を調べた.劣化初期、通電時間が経つとともにリーク電流は増大、IQEは一定であった.しかし、駆動時間400時間目の結果からIQEの低下が観測された.その原因はリーク電流によるジュール熱であると考えられる.

  282. AlGaN系紫外発光素子の通電特性 : UV-LEDの劣化メカニズム

    朴 貴珍, 杉山 貴之, 谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 稲津 哲彦, 藤田 武彦, ペルノー シリル, 平野 光

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   Vol. 111 ( 45 ) page: 123 - 126   2011.5

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    長時間・大電流駆動によるAlGaN系紫外発光素子の通電特性の変化から発光効率とリーク電流成分の増大の関連性、また、発光層への注入効率とリーク成分の関係性を調べた.劣化初期、通電時間が経つとともにリーク電流は増大、IQEは一定であった.しかし、駆動時間400時間目の結果からIQEの低下が観測された.その原因はリーク電流によるジュール熱であると考えられる.

  283. AlGaN系紫外発光素子の通電特性 : UV-LEDの劣化メカニズム

    朴 貴珍, 杉山 貴之, 谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 稲津 哲彦, 藤田 武彦, ペルノー シリル, 平野 光

    電子情報通信学会技術研究報告. ED, 電子デバイス   Vol. 111 ( 44 ) page: 123 - 126   2011.5

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    長時間・大電流駆動によるAlGaN系紫外発光素子の通電特性の変化から発光効率とリーク電流成分の増大の関連性、また、発光層への注入効率とリーク成分の関係性を調べた.劣化初期、通電時間が経つとともにリーク電流は増大、IQEは一定であった.しかし、駆動時間400時間目の結果からIQEの低下が観測された.その原因はリーク電流によるジュール熱であると考えられる.

  284. (1-101)GaN/Si上InGaN厚膜のMOVPE成長

    谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 澤木 宣彦

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   Vol. 111 ( 46 ) page: 63 - 66   2011.5

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    MOVPE法により(1-101)GaN/Si上にInGaN厚膜の成長を試みた。InGaNを成長するとGaNにみられた原子ステップは消失し、三次元成長が促進されていることを確認したが、c面によくみられるV字ピットは現れず、10nm以下の平均粗さを有する平坦性の比較的優れた結晶であることが分かった。X線逆格子マッピング測定よりInGaN結晶の格子緩和過程を観察すると、2段階の緩和過程が観察された。低In組成ではコヒーレント成長していたのに対し、In組成が増大するにつれまずc軸方向へのチルトが見られた。これは格子不整合により界面にミスフィット転位が導入されることに起因すると思われる。In組成が高くなるについてミスフィット転位の間隔が狭くなりチルト角度が増大した。<11-20>方向においては面内の格子緩和のみ発生した。

  285. (1-101)GaN/Si上InGaN厚膜のMOVPE成長

    谷川 智之, 本田 善央, 山口 雅史, 天野 浩, 澤木 宣彦

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   Vol. 111 ( 45 ) page: 63 - 66   2011.5

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    MOVPE法により(1-101)GaN/Si上にInGaN厚膜の成長を試みた。InGaNを成長するとGaNにみられた原子ステップは消失し、三次元成長が促進されていることを確認したが、c面によくみられるV字ピットは現れず、10nm以下の平均粗さを有する平坦性の比較的優れた結晶であることが分かった。X線逆格子マッピング測定よりInGaN結晶の格子緩和過程を観察すると、2段階の緩和過程が観察された。低In組成ではコヒーレント成長していたのに対し、In組成が増大するにつれまずc軸方向へのチルトが見られた。これは格子不整合により界面にミスフィット転位が導入されることに起因すると思われる。In組成が高くなるについてミスフィット転位の間隔が狭くなりチルト角度が増大した。<11-20>方向においては面内の格子緩和のみ発生した。

  286. Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (a)   Vol. 208 ( 5 ) page: 1175-1178   2011.5

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  287. Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

    C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 318 ( 1 ) page: 500-504   2011.5

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  288. Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (a)   Vol. 208 ( 5 ) page: 1175-1178   2011.5

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  289. Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes

    Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 208 ( 5 ) page: 1175 - 1178   2011.5

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    DOI: 10.1002/pssa.201000907

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  290. Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

    C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 318 ( 1 ) page: 500-504   2011.5

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  291. Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

    phys. stat. sol. (a)   Vol. 208 ( 5 ) page: 1175-1178   2011.5

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  292. Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

    phys. stat. sol. (a)   Vol. 208 ( 5 ) page: 1175-1178   2011.5

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  293. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

    Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano

    Appl. Phys. Lett.   Vol. 98 ( 14 ) page: 141905   2011.4

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  294. Semi-polar GaN LEDs on Si substrate Reviewed

    N. Sawaki and Y. Honda

    SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page: 38-41   2011.4

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  295. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

    Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano

    Appl. Phys. Lett.   Vol. 98 ( 14 ) page: 141905   2011.4

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  296. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

    Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano

    Appl. Phys. Lett.   Vol. 98 ( 14 ) page: 141905   2011.4

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  297. Semi-polar GaN LEDs on Si substrate Reviewed

    N. Sawaki, Y. Honda

    SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page: 38-41   2011.4

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  298. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

    Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano

    Appl. Phys. Lett.   Vol. 98 ( 14 ) page: 141905   2011.4

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  299. Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

    C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 318 ( 1 ) page: 500-504   2011.3

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  300. Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

    C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 318 ( 1 ) page: 500-504   2011.3

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  301. Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

    C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    SPIE   Vol. 7939   page: 79391X   2011.3

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  302. Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

    C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    SPIE   Vol. 7939   page: 79391X   2011.3

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  303. Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

    C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    SPIE   Vol. 7939   page: 79391X   2011.3

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  304. Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

    C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    SPIE   Vol. 7939   page: 79391X   2011.3

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  305. Reduction of Efficiency Droop in Semipolar (1101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

    Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, LI Zhen-Yu, CHANG Wei-Ting, HSU Hung-Wen, KUO Hao-Chung, LU Tien-Chang, WANG Shing-Chung, LIAO Wei-Tsai, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Applied physics express   Vol. 4 ( 1 ) page: "012105 - 1"-"012105-3"   2011.1

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  306. Semi-polar GaN LEDs on Si substrate Reviewed

    N. Sawaki and Y. Honda

    SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page: 38-41   2011.1

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  307. Semi-polar GaN LEDs on Si substrate Reviewed

    N. Sawaki, Y. Honda

    SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page: 38-41   2011.1

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  308. Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

    C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    Appl. Phys. Express   Vol. 4 ( 1 ) page: 01210_1-012105_3   2011.1

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  309. Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

    C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    Appl. Phys. Express   Vol. 4 ( 1 ) page: 01210_1-012105_3   2011.1

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  310. Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

    T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page: 01AD04_1-01AD04_3   2011.1

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  311. Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

    T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page: 01AD04_1-01AD04_3   2011.1

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  312. Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

    C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    Appl. Phys. Express   Vol. 4 ( 1 ) page: 01210_1-012105_3   2011.1

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  313. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

    Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    Appl. Phys. Lett.   Vol. 98 ( 5 ) page: 051902_1-051902_3   2011.1

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  314. Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

    T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page: 01AD04_1-01AD04_3   2011.1

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  315. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

    Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    Appl. Phys. Lett.   Vol. 98 ( 5 ) page: 051902_1-051902_3   2011.1

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  316. Drastic Reduction of Dislocation Density in Semipolar (11(2)over-bar2) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

    Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Sawaki Nobuhiko

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 1 )   2011.1

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    DOI: 10.1143/JJAP.50.01AD04

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  317. Semi-polar GaN LEDs on Si substrate Reviewed

    Sawaki Nobuhiko, Honda Yoshio

    SCIENCE CHINA-TECHNOLOGICAL SCIENCES   Vol. 54 ( 1 ) page: 38 - 41   2011.1

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    DOI: 10.1007/s11431-010-4182-2

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  318. Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

    C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    Appl. Phys. Express   Vol. 4 ( 1 ) page: 01210_1-012105_3   2011.1

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  319. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

    Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

    Appl. Phys. Lett.   Vol. 98 ( 5 ) page: 051902_1-051902_3   2011.1

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  320. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

    Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

    Appl. Phys. Lett.   Vol. 98 ( 5 ) page: 051902_1-051902_3   2011.1

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  321. Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

    T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page: 01AD04_1-01AD04_3   2011.1

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  322. Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed

    Sugiyama Takayuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Oshimura Yoshinori, Iida Daisuke, Iwaya Motoaki, Akasaki Isamu

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

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    DOI: 10.1002/pssc.201001081

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  323. Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes Reviewed

    Tanikawa Tomoyuki, Murase Tasuku, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

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    DOI: 10.1002/pssc.201000995

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  324. Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate Reviewed

    Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

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    DOI: 10.1002/pssc.201000990

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  325. Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

    B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 42 ( 10 ) page: 2575-2578   2010.10

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  326. Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

    B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    Physica E   Vol. 42 ( 10 ) page: 2575-2578   2010.10

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  327. Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

    B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    Physica E   Vol. 42 ( 10 ) page: 2575-2578   2010.10

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  328. Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

    B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    Physica E   Vol. 42 ( 10 ) page: 2575-2578   2010.10

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  329. HVPE growth of a -plane GaN on a GaN template (110)Si substrate Reviewed

    T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 7 ( 7-8 ) page: 1760–1763   2010.7

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  330. HVPE growth of a -plane GaN on a GaN template (110)Si substrate Reviewed

    T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 7 ( 7-8 ) page: 1760–1763   2010.7

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  331. 選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製 Reviewed

    TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

    IEICE technical report   Vol. 109 ( 422 ) page: 23 - 28   2010.2

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    We investigated the InGaN/GaN multiple quantum well(MQW)thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

  332. 選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製 Reviewed

    TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

    IEICE technical report   Vol. 109 ( 423 ) page: 23 - 28   2010.2

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    We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

  333. HVPE growth of a-plane GaN on a GaN template (110)Si substrate Reviewed

    Tanikawa Tomoyuki, Suzuki Noriyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8   Vol. 7 ( 7-8 )   2010

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    DOI: 10.1002/pssc.200983563

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  334. Percolation transport in an AlGaN/GaN heterostructure Invited Reviewed

    N. Sawaki, X. X. Han, Y. Honda, and M. Yamaguchi

    Journal of Physics: Conference Series   Vol. 193   page: 012012_1-012012_4   2009.11

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  335. Percolation transport in an AlGaN/GaN heterostructure Invited Reviewed

    N. Sawaki, X. X. Han, Y. Honda, M. Yamaguchi

    Journal of Physics: Conference Series   Vol. 193   page: 012012_1-012012_4   2009.11

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  336. Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates Reviewed

    M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Korean Phys. Soc.   Vol. 54 ( 6 ) page: 2363   2009.6

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  337. Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates Reviewed

    Yang Min, Ahn Hyung Soo, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY   Vol. 54 ( 6 ) page: 2363 - 2366   2009.6

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  338. Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates Reviewed

    M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Korean Phys. Soc.   Vol. 54 ( 6 ) page: 2363   2009.6

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  339. Growth and properties of semi-polar GaN on a patterned silicon substrate Reviewed

    Sawaki Nobuhiko, Hikosaka Toshiki, Koide Norikatsu, Tanaka Shigeyasu, Honda Yoshio, Yamaguchi Masahito

    JOURNAL OF CRYSTAL GROWTH   Vol. 311 ( 10 ) page: 2867 - 2874   2009.5

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    DOI: 10.1016/j.jcrysgro.2009.01.032

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  340. Maskless selective growth of semi-polar (11(2)over-bar2) GaN on Si (311) substrate by metal organic vapor phase epitaxy Reviewed

    Yang Min, Ahn Hyung Soo, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF CRYSTAL GROWTH   Vol. 311 ( 10 ) page: 2914 - 2918   2009.5

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    DOI: 10.1016/j.jcrysgro.2009.01.064

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  341. *DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed

    Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, and B. Monemar

    phys. stat. sol. (c)   Vol. 6 ( S2 ) page: S772   2009.5

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  342. *DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed

    Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, B. Monemar

    phys. stat. sol. (c)   Vol. 6 ( S2 ) page: S772   2009.5

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  343. *Growth and properties of semi-polar GaN on a patterned silicon substrate Reviewed

    N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2867   2009.3

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  344. Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy Reviewed

    M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2914   2009.3

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  345. MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer Reviewed

    M. Irie, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2891   2009.3

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  346. *Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si Reviewed

    T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2879   2009.3

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  347. *HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate Reviewed

    N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2875   2009.3

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  348. *Growth and properties of semi-polar GaN on a patterned silicon substrate Reviewed

    N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, M. Yamaguchi

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2867   2009.3

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  349. *Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si Reviewed

    T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2879   2009.3

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  350. *HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate Reviewed

    N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2875   2009.3

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  351. Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy Reviewed

    M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2914   2009.3

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  352. MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer Reviewed

    M. Irie, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2891   2009.3

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  353. Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures Reviewed

    Han Xiuxun, Honda Yoshio, Narita Tetsuo, Yamaguchi Masahito, Sawaki Nobuhiko, Tanaka Tooru, Guo Qixin, Nishio Mitsushiro

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 42 ( 4 )   2009.2

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    DOI: 10.1088/0022-3727/42/4/045112

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  354. Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures Reviewed

    X.X. Han XX, T. Honda, T. Narita, M. Yamaguchi, N. Sawaki, T. Tanaka, Q.X. Guo, and M. Nishio

    J. Phys. D   Vol. 42 ( 4 ) page: 045112-1   2009.1

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  355. Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures Reviewed

    X.X. Han XX, T. Honda, T. Narita, M. Yamaguchi, N. Sawaki, T. Tanaka, Q.X. Guo, M. Nishio

    J. Phys. D   Vol. 42 ( 4 ) page: 045112-1   2009.1

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  356. DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed

    Honda Yoshio, Hikosaka Toshiki, Yamaguchi Masahito, Sawaki Nobuhiko, Pozina Galia, Karlsson Fredrik, Darakchieva Vanya, Paskov Plamen, Monemar Bo

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2   Vol. 6   page: S772 - S775   2009

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    DOI: 10.1002/pssc.200880932

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  357. Time-resolved spectroscopy in an undoped GaN (1-101) Reviewed

    E.H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 1 ) page: 367-369   2008

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  358. Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE Reviewed

    T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 9 ) page: 2966-2968   2008

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  359. *Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates Reviewed

    T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 6 ) page: 2234?2237   2008

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  360. Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN Reviewed

    J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 6 ) page: 1746?1749   2008

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  361. Time-resolved spectroscopy in an undoped GaN (1-101) Reviewed

    E.H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 1 ) page: 367-369   2008

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  362. *Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates Reviewed

    T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 6 ) page: 2234?2237   2008

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  363. Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN Reviewed

    J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 6 ) page: 1746?1749   2008

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  364. Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE Reviewed

    T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 9 ) page: 2966-2968   2008

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  365. Si基板上でのGaNマイクロファセット上へのInGaN/GaN選択MOVPE成長 Reviewed

    中島 由樹, 本田 善央, 山口 雅史, 澤木 宣彦

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   Vol. 107 ( 252 ) page: 97 - 102   2007.10

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    選択MOVPE法により(111)Si基板上に作製された(0001)面と(1-101)面からなるGaN台形ストライプ構造上にInGaN/GaNヘテロ構造のMOVPE成長を試みた。InGaN混晶薄膜の膜厚は各々のファセット面上で一様でなく、顕著なリッジ成長が見られた。CLスペクトルから組成均一性を評価したところ、(0001)面上ではスペクトルの中央値(ピーク値)は面上で一様であったが、リッジ部でスペクトル半値幅が増加し組成揺らぎが増強されることが分かった。これらの結果は気相中あるいはファセット表面上での化学種の拡散現象だけでは説明できなかった。

  366. Si基板上でのGaNマイクロファセット上へのInGaN/GaN選択MOVPE成長 Reviewed

    中島 由樹, 本田 善央, 山口 雅史, 澤木 宣彦

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   Vol. 107 ( 253 ) page: 97 - 102   2007.10

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    選択MOVPE法により(111)Si基板上に作製された(0001)面と(1-101)面からなるGaN台形ストライプ構造上にInGaN/GaNヘテロ構造のMOVPE成長を試みた。InGaN混晶薄膜の膜厚は各々のファセット面上で一様でなく、顕著なリッジ成長が見られた。CLスペクトルから組成均一性を評価したところ、(0001)面上ではスペクトルの中央値(ピーク値)は面上で一様であったが、リッジ部でスペクトル半値幅が増加し組成揺らぎが増強されることが分かった。これらの結果は気相中あるいはファセット表面上での化学種の拡散現象だけでは説明できなかった。

  367. Si基板上でのGaNマイクロファセット上へのInGaN/GaN選択MOVPE成長 Reviewed

    中島 由樹, 本田 善央, 山口 雅史, 澤木 宣彦

    電子情報通信学会技術研究報告. ED, 電子デバイス   Vol. 107 ( 251 ) page: 97 - 102   2007.10

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    選択MOVPE法により(111)Si基板上に作製された(0001)面と(1-101)面からなるGaN台形ストライプ構造上にInGaN/GaNヘテロ構造のMOVPE成長を試みた。InGaN混晶薄膜の膜厚は各々のファセット面上で一様でなく、顕著なリッジ成長が見られた。CLスペクトルから組成均一性を評価したところ、(0001)面上ではスペクトルの中央値(ピーク値)は面上で一様であったが、リッジ部でスペクトル半値幅が増加し組成揺らぎが増強されることが分かった。これらの結果は気相中あるいはファセット表面上での化学種の拡散現象だけでは説明できなかった。

  368. Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy Reviewed

    TANAKA Shigeyasu, AOYAMA Kentaro, ICHIHASHI Mikio, ARAI Shigeo, HONDA Yoshio, SAWAKI Nobuhiko

    Journal of electron microscopy   Vol. 56 ( 4 ) page: 141 - 144   2007.8

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  369. Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy Reviewed

    Tanaka Shigeyasu, Aoyama Kentaro, Ichihashi Mikio, Arai Shigeo, Honda Yoshio, Sawaki Nobuhiko

    JOURNAL OF ELECTRON MICROSCOPY   Vol. 56 ( 4 ) page: 141 - 144   2007.8

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    DOI: 10.1093/jmicro/dfm016

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    PubMed

  370. Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure Reviewed

    TANAKA Shigeyasu, NAITO Akiyuki, HONDA Yoshio, SAWAKI Nobuhiko, ICHIHASHI Mikio

    Journal of electron microscopy   Vol. 56 ( 2 ) page: 37 - 42   2007.4

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  371. Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure Reviewed

    Tanaka Shigeyasu, Naito Akiyuki, Honda Yoshio, Sawaki Nobuhiko, Ichihashi Mikio

    JOURNAL OF ELECTRON MICROSCOPY   Vol. 56 ( 2 ) page: 37 - 42   2007.4

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    DOI: 10.1093/jmicro/dfm013

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    PubMed

  372. Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures Reviewed

    Han Xiuxun, Honda Yoshio, Narita Tetsuo, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF PHYSICS-CONDENSED MATTER   Vol. 19 ( 4 )   2007.1

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    DOI: 10.1088/0953-8984/19/4/046204

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  373. Mg doping in (1(1)over-bar01)GaN grown on a 7 degrees off-axis (001)Si substrate by selective MOVPE Reviewed

    Hikosaka Toshiki, Koide Norikatsu, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF CRYSTAL GROWTH   Vol. 298   page: 207 - 210   2007.1

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    DOI: 10.1016/j.jcrysgro.2006.10.229

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  374. Fabrication of SAG-AlGaN/InGaN/AlGaN LEDs by mixed-source HVPE with multi-sliding boat system Reviewed

    K. H. Kim, K. S. Jang, S. L. Hwang, H. S. Jeon, W. J. Choi, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 29?32   2007

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  375. Al doping in (1?101) GaN films grown on patterned (001) Si substrate Reviewed

    T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Appl. Phys.   Vol. 101 ( 10 ) page: 103513-1-103513-5   2007

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  376. MOVPE growth and cathodoluminescence properties of GAN microcrystal co-doped with Zn and Si Reviewed

    Y. Honda, Y. Yanase, M. Tsuji, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 300 ( 1 ) page: 110-113   2007

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  377. Mg doping in (1-101)GaN grown on a 7o off-axis (001)Si substrate by selective MOVPE Reviewed

    T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 298   page: 207-210   2007

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  378. Transport properties of the two-dimensional electron gas in AlxGa1?xN/GaN heterostructures Reviewed

    X. Han, Y. Honda, T. Narita, M. Yamaguchi and N. Sawaki

    J. Phys.: Condens. Matter   Vol. 19 ( 4 ) page: 046204_1-046204_11   2007

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  379. Characterization of AlGaN, Te-doped GaN and Mg-doped GaN grown by hydride vapor phase epitaxy Reviewed

    K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, H. S. Ahn, M. Yang, W. J. Choi, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 133?136   2007

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  380. Growth of InGaN layer on GaN templated Al2O3 (0001) and Si (111) substrates by mixed-source HVPE Reviewed

    S. L. Hwang, K. S. Jang, K. H. Kim, H. S. Jeon, H. S. Ahn, M. Yang, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 125?128   2007

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  381. Acceptor Level due to Carbon in a (1?101)AlGaN Reviewed

    N. Sawaki, N. Koide, T. Hikosaka, Y. Honda, and M. Yamaguchi

    AIP Conf. Proc.   Vol. 893   page: 281-282   2007

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  382. Electron-Beam-Induced-Current Investigation of GaN/AlGaN/Si Heterostructures Using Scanning Transmission Electron Microscopy Reviewed

    S. Tanaka, K. Aoyama, M. Ichihashi, S. Arai, Y. Honda, and N. Sawaki

    J. Electron Microsc.   Vol. 56 ( 4 ) page: 141-144   2007

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  383. Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure Reviewed

    S. Tanaka, A. Naito, Y. Honda, N. Sawaki, and M. Ichihashi

    J. Electron Microsc.   Vol. 56 ( 2 ) page: 37-42   2007

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  384. Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te-doped AlGaN cladding layer grown by mixed-source HVPE Reviewed

    K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, S. H. Jang, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2240-2243   2007

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  385. Subband structure and transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures Reviewed

    X. Han, Y. Honda, T. Narita, M. Yamaguchi and N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2334-2337   2007

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  386. The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2506-2509   2007

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  387. Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE Reviewed

    Y. Honda, S. Kato, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2740-2743   2007

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  388. Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate Reviewed

    E.H. Kim, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2838-2841   2007

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  389. Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE Reviewed

    Y. Honda, S. Kato, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2740-2743   2007

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  390. Subband structure and transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures Reviewed

    X. Han, Y. Honda, T. Narita, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2334-2337   2007

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  391. The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2506-2509   2007

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  392. Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate Reviewed

    E.H. Kim, T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2838-2841   2007

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  393. Transport properties of the two-dimensional electron gas in AlxGa1?xN/GaN heterostructures Reviewed

    X. Han, Y. Honda, T. Narita, M. Yamaguchi, N. Sawaki

    J. Phys.: Condens. Matter   Vol. 19 ( 4 ) page: 046204_1-046204_11   2007

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  394. Acceptor Level due to Carbon in a (1?101)AlGaN Reviewed

    N. Sawaki, N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi

    AIP Conf. Proc.   Vol. 893   page: 281-282   2007

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  395. Growth of InGaN layer on GaN templated Al2O3 (0001) and Si (111) substrates by mixed-source HVPE Reviewed

    S. L. Hwang, K. S. Jang, K. H. Kim, H. S. Jeon, H. S. Ahn, M. Yang, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 125?128   2007

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  396. Fabrication of SAG-AlGaN/InGaN/AlGaN LEDs by mixed-source HVPE with multi-sliding boat system Reviewed

    K. H. Kim, K. S. Jang, S. L. Hwang, H. S. Jeon, W. J. Choi, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 29?32   2007

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  397. Electron-Beam-Induced-Current Investigation of GaN/AlGaN/Si Heterostructures Using Scanning Transmission Electron Microscopy Reviewed

    S. Tanaka, K. Aoyama, M. Ichihashi, S. Arai, Y. Honda, N. Sawaki

    J. Electron Microsc.   Vol. 56 ( 4 ) page: 141-144   2007

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  398. Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te-doped AlGaN cladding layer grown by mixed-source HVPE Reviewed

    K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, S. H. Jang, S. M. Lee, M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2240-2243   2007

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  399. Characterization of AlGaN, Te-doped GaN and Mg-doped GaN grown by hydride vapor phase epitaxy Reviewed

    K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, H. S. Ahn, M. Yang, W. J. Choi, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 133?136   2007

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  400. Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure Reviewed

    S. Tanaka, A. Naito, Y. Honda, N. Sawaki, M. Ichihashi

    J. Electron Microsc.   Vol. 56 ( 2 ) page: 37-42   2007

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  401. Al doping in (1?101) GaN films grown on patterned (001) Si substrate Reviewed

    T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Appl. Phys.   Vol. 101 ( 10 ) page: 103513-1-103513-5   2007

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  402. Mg doping in (1-101)GaN grown on a 7o off-axis (001)Si substrate by selective MOVPE Reviewed

    T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 298   page: 207-210   2007

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  403. MOVPE growth and cathodoluminescence properties of GAN microcrystal co-doped with Zn and Si Reviewed

    Y. Honda, Y. Yanase, M. Tsuji, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 300 ( 1 ) page: 110-113   2007

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  404. Carbon incorporation on (1101) facet of AlGaN in metal organic vapor phase epitaxy Reviewed

    Koide Norikatsu, Hikosaka Toshiki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 45 ( 10A ) page: 7655 - 7660   2006.10

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    DOI: 10.1143/JJAP.45.7655

    Web of Science

  405. The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE Reviewed

    Narita Tetsuo, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 243 ( 7 ) page: 1665 - 1668   2006.6

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    DOI: 10.1002/pssb.200565115

    Web of Science

  406. Series resistance in n-GaN/AIN/n-Si heterojunction structure Reviewed

    Kondo Hiroyuki, Koide Norikatsu, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 45 ( 5A ) page: 4015 - 4017   2006.5

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    DOI: 10.1143/JJAP.45.4015

    Web of Science

  407. Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE Reviewed

    K. H. Kim, H. S. Ahn, M. Yang, K. S. Jang, S. L. Hwang, W. J. Choi, C. R. Cho, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1461?1465   2006

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  408. Carbon Incorporation on (1-101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy Reviewed

    N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 45 ( 10A ) page: 7655-7660   2006

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  409. Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure Reviewed

    H. Kondo, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 45 ( 5A ) page: 4015?4017   2006

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  410. Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate Reviewed

    E. H. Kim, T. Hikosaka, T. Narita, Y. Honda, N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1992?1996   2006

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  411. p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE Reviewed

    T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1425?1428   2006

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  412. Cathodoluminescence properties of InGaN codoped with Zn and Si Reviewed

    Y. Honda, Y. Yanase, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1915?1918   2006

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  413. The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (b)   Vol. 243 ( 7 ) page: 1665?1668   2006

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  414. The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (b)   Vol. 243 ( 7 ) page: 1665?1668   2006

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  415. Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate Reviewed

    E. H. Kim, T. Hikosaka, T. Narita, Y. Honda, N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1992?1996   2006

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  416. p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE Reviewed

    T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1425?1428   2006

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  417. Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure Reviewed

    H. Kondo, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 45 ( 5A ) page: 4015?4017   2006

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  418. Carbon Incorporation on (1-101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy Reviewed

    N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 45 ( 10A ) page: 7655-7660   2006

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  419. Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE Reviewed

    K. H. Kim, H. S. Ahn, M. Yang, K. S. Jang, S. L. Hwang, W. J. Choi, C. R. Cho, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1461?1465   2006

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  420. Cathodoluminescence properties of InGaN codoped with Zn and Si Reviewed

    Y. Honda, Y. Yanase, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1915?1918   2006

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  421. The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

    HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 105 ( 90 ) page: 69 - 74   2005.5

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    Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

  422. The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

    HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. SDM   Vol. 105 ( 94 ) page: 69 - 74   2005.5

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    Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

  423. The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

    HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Component parts and materials   Vol. 105 ( 92 ) page: 69 - 74   2005.5

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    Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

  424. Uniform growth of GaN on AlN templated (111)Si substrate by HVPE Reviewed

    Y. Honda, M. Okano, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 2 ( 7 ) page: 2125? 2128   2005

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  425. Incorporation of carbon on a (1-101) facet of GaN by MOVPE Reviewed

    N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 284 ( 3-4 ) page: 341?346   2005

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  426. Characterization of AlGaN layer with high Al content grown by mixed-source HVPE Reviewed

    H. S. Ahn, K. H. Kim, M. Yang, J. Y. Yi, H. J. Lee, J. H. Chang, H. S. Kim, S. W. Kim, S. C. Lee, Y Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (a)   Vol. 202 ( 6 ) page: 1048?1052   2005

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  427. Doping in GaN and AlGaN Grown by Mixed-Source Hydride Vapor Phase Epitaxy Reviewed

    J. Y. Yi, Kyoung H. Kim, H. J. Lee, M.?Yang, H. S. Ahn, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, and N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 373-376   2005

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  428. Growth of AlGaN on Al2O3 substrates by Mixed-Source HVPE Reviewed

    K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, S. N. Yi, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, and N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 361-364   2005

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  429. Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE Reviewed

    T. Hikosaka, Y. Honda, N. Koide, M. Yamaguchi, and N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 251-254   2005

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  430. Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy Reviewed

    H.S. Ahn, K.H. Kim, M. Yang, J.Y. Yi, H.J. Lee, C.R. Cho, H.K. Cho, S.W. Kim, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    Appl. Surf. Science   Vol. 243 ( 1-4 ) page: 178-182   2005

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  431. Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 2 ( 7 ) page: 2349?2352   2005

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  432. Characterization of AlGaN layer with high Al content grown by mixed-source HVPE Reviewed

    H. S. Ahn, K. H. Kim, M. Yang, J. Y. Yi, H. J. Lee, J. H. Chang, H. S. Kim, S. W. Kim, S. C. Lee, Y Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (a)   Vol. 202 ( 6 ) page: 1048?1052   2005

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  433. Growth of AlGaN on Al2O3 substrates by Mixed-Source HVPE Reviewed

    K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, S. N. Yi, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 361-364   2005

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  434. Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE Reviewed

    T. Hikosaka, Y. Honda, N. Koide, M. Yamaguchi, N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 251-254   2005

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  435. Doping in GaN and AlGaN Grown by Mixed-Source Hydride Vapor Phase Epitaxy Reviewed

    J. Y. Yi, Kyoung H. Kim, H. J. Lee, M.?Yang, H. S. Ahn, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 373-376   2005

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  436. Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy Reviewed

    H.S. Ahn, K.H. Kim, M. Yang, J.Y. Yi, H.J. Lee, C.R. Cho, H.K. Cho, S.W. Kim, T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

    Appl. Surf. Science   Vol. 243 ( 1-4 ) page: 178-182   2005

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  437. Incorporation of carbon on a (1-101) facet of GaN by MOVPE Reviewed

    N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    J. Cryst. Growth   Vol. 284 ( 3-4 ) page: 341?346   2005

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  438. Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

    HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

    Technical report of IEICE. SDM   Vol. 104 ( 43 ) page: 17 - 22   2004.5

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    We had grown the GaN/AIN pyramid structure on (111)Si substrate by MOVPE. The non-uniformity of GaN shape was issue to solve. The reason of that was non-uniformity nucleation of AlN intermediate layer. We estimated the uniformity of GaN/AlN pyramid structure with changing the growth time of AlN intermediate layer. In the case of the thin AlN, we got uniform GaN/AlN structure. A thinner film of AlN contribute to the improvement of current-voltage characterization, we think it effective for the field emitting device.

  439. Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

    HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

    IEICE technical report. Component parts and materials   Vol. 104 ( 41 ) page: 17 - 22   2004.5

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    We had grown the GaN/AIN pyramid structure on (111)Si substrate by MOVPE. The non-uniformity of GaN shape was issue to solve. The reason of that was non-uniformity nucleation of AlN intermediate layer. We estimated the uniformity of GaN/AlN pyramid structure with changing the growth time of AlN intermediate layer. In the case of the thin AlN, we got uniform GaN/AlN structure. A thinner film of AlN contribute to the improvement of current-voltage characterization, we think it effective for the field emitting device.

  440. Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

    HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

    IEICE technical report. Electron devices   Vol. 104 ( 39 ) page: 17 - 22   2004.5

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    We had grown the GaN/AIN pyramid structure on (111)Si substrate by MOVPE. The non-uniformity of GaN shape was issue to solve. The reason of that was non-uniformity nucleation of AlN intermediate layer. We estimated the uniformity of GaN/AlN pyramid structure with changing the growth time of AlN intermediate layer. In the case of the thin AlN, we got uniform GaN/AlN structure. A thinner film of AlN contribute to the improvement of current-voltage characterization, we think it effective for the field emitting device.

  441. Photocurrent spectroscopy of a (0001) GaN/AlGaN/(111)Si heterostructure Reviewed

    Y. Kuroiwa, Y. Honda, N. Sawaki

    Physica E   Vol. 21 ( 2-4 ) page: 782-792   2004

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  442. Fabrication and optical properties of GaN micro-prism array on an Si substrate Reviewed

    A. Nishioka, Y. Honda, and N. Sawaki

    Proc. of Int. Conf. on Electrical Engineering 2004   Vol. 3-1   page: 297-300   2004

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  443. Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1?101) GaN facet Reviewed

    Eun-Hee Kim, Tetsuo Narita, Yoshio Honda, and Nobuhiko Sawaki

    phys. stat. sol. (c)   Vol. 1 ( 10 ) page: 2512?2515   2004

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  444. Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001)Si substrate by metalorganic vapor phase epitaxy Reviewed

    S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, T. Tanji, and M. Ichihashi

    J. Cryst. Growth   Vol. 260 ( 3-4 ) page: 360-365   2004

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  445. Growth of thick AlGaN by metalorganic-hydride vapor phase epitaxy Reviewed

    K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, C. R. Cho, S. W. Kim, S. C. Lee, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 1 ( 10 ) page: 2474?2477   2004

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  446. Optical and electrical properties of (1-101)GaN grown on a 7[degree] off-axis (001)Si substrate Reviewed

    T. Hikosaka, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    Appl. Phys. Lett.   Vol. 84 ( 23 ) page: 4717-4719   2004

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  447. HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate Reviewed

    Y. Nishimura, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 7 ) page: 2506-2510   2003

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  448. The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE Reviewed

    Y. Honda, M. Torikai, T. Nakamura, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 7 ) page: 2043-2046   2003

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  449. Infrared Reflectance in GaN/AlGaN Triangular Stripes Grown on Si(111) Substrates by MOVPE Reviewed

    M. Mizushima, T. Kato, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Kor. Phys. Soc.   Vol. 42 ( Supp. issue 2 ) page: S750-S752   2003

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  450. Photoluminescence Properties of a Self-Doped GaN Layer Grown on Si Substrate Reviewed

    K. H. Kim, H. Kim, M. Yang, H. S. Ahn, S. N. Yi, N. Kameshiro, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Kor. Phys. Soc.   Vol. 42 ( Supp. issue 2 ) page: S219-S221   2003

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  451. Optical Characteristics of the AlGaN/GaN/AlGaN Waveguide Grown on (111) Si Substrate Reviewed

    H. Kim, K. H. Kim, M. Yang, H. S. Ahn, S. N. Yi, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Kor. Phys. Soc.   Vol. 42   page: S622-S624   2003

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  452. The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth Reviewed

    T. Narita, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 7 ) page: 2154-2158   2003

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  453. Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate Reviewed

    Tanaka Shigeyasu, Honda Yoshio, Kameshiro Norifumi, IWASAKI Ryuta, SAWAKI Nobuhiko, TANJI Takayoshi

    Japanese journal of applied physics. Pt. 2, Letters   Vol. 41 ( 7 ) page: L846 - L848   2002.7

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  454. Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate Reviewed

    NARITA Tetsuo, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 102 ( 114 ) page: 25 - 28   2002.6

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    A trapezoidal stripe structure and GaN/AlGaN heterostructure were fabricated on a (111)Si substrate by selective area metalorganic vapor phaseepitaxy(SAG-MOVPE). The stripe was made of (11^^-01) side facets and (0001) face at the top. The cathode luminescence spectra at 4.0K exhibited several DAP emission from the AlGaN alloy. It was shown that the optical spectra depend on the thickness of the film on the facets. This suggests that the strain at the heterointerface modifies the growth mode on the facet.

  455. Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate Reviewed

    NARITA Tetsuo, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. LQE   Vol. 102 ( 117 ) page: 25 - 28   2002.6

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    A trapezoidal stripe structure and GaN/AlGaN heterostructure were fabricated on a (111)Si substrate by selective area metalorganic vapor phaseepitaxy(SAG-MOVPE). The stripe was made of (1101) side facets and (0001) face at the top. The cathode luminescence spectra at 4.0K exhibited several DAP emission from the AlGaN alloy. It was shown that the optical spectra depend on the thickness of the film on the facets. This suggests that the strain at the heterointerface modifies the growth mode on the facet.

  456. Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE Reviewed

    TORIKAI Masayuki, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. LQE   Vol. 102 ( 117 ) page: 21 - 24   2002.6

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    MOVPE growth of a GaN/Al_xGa_1-xN hexagonal pyramid array was attempted on a (111)Si substrate. On a truncated GaN pyramidal structure, an Al_xGa_1-xN film was deposited. It was found that the Al composition is a strong function of the position on the facets. At the top of the pyramid, it was higher than that at the bottom. The phenomenon is attributed to the different diffusion coefficients of Al and Ga chemical species on the surface. In case of the AlN film, the CL spectrum at 4.2 K for the C-surface exhibited a strong peak 218nm. However, we found an array of pits of which structure reflecting the hexagonal structure of the facet.

  457. Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE Reviewed

    TORIKAI Masayuki, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 102 ( 114 ) page: 21 - 24   2002.6

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    MOVPE growth of a GaN/Al_xGa_<1-x>N hexagonal pyramid array was attempted on a (111)Si substrate. On a truncated GaN pyramidal structure, an Al_xGa_<1-x> film was deposited. It was found that the Al composition is a strong function of the position on the facets. At the top of the pyramid, it was higher than that at the bottom. The phenomenon is attributed to the different diffusion coefficients of Al and Ga chemical species on the surface. In case of the AIN film, the CL spectrum at 4.2 K for the C-surface exhibited a strong peak 218nm. However, we found an array of pits of which structure reflecting the hexagonal structure of the facet.

  458. Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate Reviewed

    KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Component parts and materials   Vol. 102 ( 78 ) page: 27 - 31   2002.5

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    The GaN grown on a (111) Silicon substrate has, usually, many cracks because of the large mismatch of the thermal expansion coefficients. We have proposed a method to reduce the strain due to this large mismatch by inclining the C-axis. On a 7 degrees off axis (001) Silicon substrate (111) facets are made by anisotropic etching in KOH solution. On this facet we grew GaN selectively, of which (1-101) surface is parallel to the Silicon substrate. Moreover, we fabricated AlGaN/GaN heterostructures on the (1-101) GaN.

  459. Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate Reviewed

    KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. SDM   Vol. 102 ( 80 ) page: 27 - 31   2002.5

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    The GaN grown on a (111) Silicon substrate has, usually, many cracks because of the large mismatch of the thermal expansion coefficients. We have proposed a method to reduce the strain due to this large mismatch by inclining the C-axis. On a 7 degrees off axis (001) Silicon substrate (111) facets are made by anisotropic etching in KOH solution. On this facet we grew GaN selectively, of which (1-101) surface is parallel to the Silicon substrate. Moreover, we fabricated AlGaN/GaN heterostructures on the (1-101) GaN.

  460. Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate Reviewed

    KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 102 ( 76 ) page: 27 - 31   2002.5

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    The GaN grown on a (111) Silicon substrate has, usually, many cracks because of the large mismatch of the thermal expansion coefficients. We have proposed a method to reduce the strain due to this large mismatch by inclining the C-axis. On a 7 degrees off axis (001) Silicon substrate (111) facets are made by anisotropic etching in KOH solution. On this facet we grew GaN selectively, of which (1-101) surface is parallel to the Silicon substrate. Moreover, we fabricated AlGaN/GaN heterostructures on the (1-101) GaN.

  461. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor- phase epitaxy Reviewed

    KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Component parts and materials   Vol. 102 ( 78 ) page: 15 - 19   2002.5

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    The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO_2 grid mask pattern. Though rigde growth arose at egde region of the mask, GaN films free from cracks were achived. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcsec and that of the band edge emission of photoluminescence at 77K was 18.6 meV. I-V characteristics of a GaN/AlGaN/Si diode shows low resistance ohmic behavior, and The photocurrent spectra show existence of an amorphous Si layer at AlGaN/Si interface.

  462. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy Reviewed

    KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 102 ( 76 ) page: 15 - 19   2002.5

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO_2 grid mask pattern. Though rigde growth arose at egde region of the mask, GaN films free from cracks were achived. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcsec and that of the band edge emission of photoluminescence at 77K was 18.6 meV. I-V characteristics of a GaN/AlGaN/Si diode shows low resistance ohmic behavior, and The photocurrent spectra show existence of an amorphous Si layer at AlGaN/Si interface.

  463. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy Reviewed

    KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. SDM   Vol. 102 ( 80 ) page: 15 - 19   2002.5

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO_2 grid mask pattern. Though rigde growth arose at egde region of the mask, GaN films free from cracks were achived. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcsec and that of the band edge emission of photoluminescence at 77K was 18.6 meV. I-V characteristics of a GaN/AlGaN/Si diode shows low resistance ohmic behavior, and The photocurrent spectra show existence of an amorphous Si layer at AlGaN/Si interface.

  464. Growth of GaN free from cracks on a (111) Si substrate by selective metalorganic vapor-phase epitaxy Reviewed

    Y. Honda, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki

    Appl. Phys. Lett   Vol. 80 ( 2 ) page: 222-224   2002

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  465. Transmission electron microscopy study of the microstructure in selective-area-grown GaN and an AlGaN/GaN heterostructure on a 7-degree off-oriented (001) Si substrate Reviewed

    S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, and T. Tanji

    Jpn. J. Appl. Phys.   Vol. 41 ( 7B ) page: L846-L848   2002

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  466. HVPE Growth of GaN on a GaN Templated (111) Si Substrate Reviewed

    Y. Honda, T. Ishikawa, Y. Nishimura, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 1 ) page: 107-111   2002

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  467. Fabrication of GaN/AlGaN MQW on (1-101) facet of wurtzite GaN grown on a (111) Si substrate by selective MOVPE Reviewed

    T. Kato, Y. Honda, M. Yamaguchi, N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 170   page: 789-794   2002

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  468. Growth of (1-101) GaN on a 7-degree off-oriented (001) Si substrate by selective MOVPE Reviewed

    Y. Honda, N. Kameshiro, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 242 ( 1-2 ) page: 82-86   2002

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  469. Growth of GaN crystal free from cracks on a (111) Si substrate by selective MOVPE Reviewed

    Y. Honda, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 242 ( 1-2 ) page: 77-81   2002

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  470. Fabrication of GaN/AlGaN heterostructures on a (111) Si substrate by selective MOVPE Reviewed

    T. Kato, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 237-239 ( 2 ) page: 1099-1103   2002

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  471. Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate. Reviewed

    Tanaka Shigeyasu, Honda Yoshio, Kameshiro Norifumi, Iwasaki Ryuta, Sawaki Nobuhiko, Tanji Takayoshi

    Japanese Journal of Applied Physics   Vol. 41 ( 7 ) page: L846 - L848   2002

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    DOI: 10.1143/JJAP.41.L846

  472. Fabrication of GaN dots array on Si substrate by selective area growth method Reviewed

    YAMAGUCHI Masahito, HONDA Yoshio, SAWAKI Nobuhiko

    Technical report of IEICE. SDM   Vol. 100 ( 643 ) page: 25 - 30   2001.2

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    We have fabricated sub-micron GaN dots array on(111)Si substrate by metal organic vapor phase epitaxy(MOVPE)selective area growth. The SiO_2 mask for the selective area growth was prepared with electron beam lithography system and the circle window diameter of the mask was less than 250 nm. The bottom and top surface size of the fabricated GaN dots was about 250 nm and 50 nm, respectively. In comparison with the GaN dots grown on sapphire substrate, the shape of the facet was found to be clear. The optical properties in the GaN dot on Si substrate are relatively good. Therefore, the(111)Si substrate is suitable for the fabrication of the GaN quantum dots.

  473. Selective growth of GaN/AlGaN microstructures by metalorganic vapor phase epitaxy Reviewed

    T. Kato, Y. Honda, Y. Kawaguchi, M. Yamaguchi, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 40 ( 3B ) page: 1896-1898   2001

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  474. Structural characterization of GaN laterally overgrown on a (111)Si substrate Reviewed

    S. Tanaka, Y. Honda, N. Sawaki, and M. Hibino

    Appl. Phys. Lett   Vol. 79 ( 7 ) page: 955-957   2001

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  475. Selective area growth of GaN microstructures on petterned (111) and (001) Si substrate Reviewed

    Y. Honda, Y. Kawaguchi, Y. Ohtake, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 230 ( 3-4 ) page: 346-350   2001

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  476. Fabrication of GaN micro-structures on (111) Si by selective area growth by MOVPE Reviewed

    HONDA Y., OHTAKE Y., KAWAGUCHI Y., YAMAGUCHI M., SAWAKI N.

    IEICE technical report. Electron devices   Vol. 99 ( 616 ) page: 21 - 28   2000.2

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    Selective area growth(SAG)of stripe structure and hexagonal pyramids of GaN on a(111)Si substrate is studied with AlGaN intermediate layer. The crystalinity is much improved by the SAG as compared to that due to a conventional method. It is demonstrated that the formation process of the intermediate layer is the key issue to improve the optical properties as well as the crystalinity.

  477. Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE Reviewed

    Y. Honda, Y. Kawaguchi, T. Kato, M. Yamaguchi, and N. Sawaki

    IPAP Conf. Series   Vol. 1   page: 304-307   2000

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  478. Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy Reviewed

    Y. Kawaguchi, Y. Honda, M. Yamaguchi, N. Sawaki, and K. Hiramatsu

    Phys. Stat. Sol. (a)   Vol. 176   page: 553-556   1999

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  479. Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of wurtzite GaN on (111) Si substrate by metalorganic vapor phase epitaxy Reviewed

    Y. Kawaguchi, Y. Honda, M. Yamaguchi, K. Hiramatsu, and N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 162   page: 687-692   1999

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  480. Selective area growth of GaN on Si substrate using SiO_2 mask by metalorganic vapor phase epitaxy Reviewed

    Y. Kawaguchi, Y. Honda, H. Matsushima, M. Yamaguchi, K. Hiramatsu, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 37 ( 8B ) page: L966-L969   1998

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▼display all

Presentations 47

  1. Photocurrent and Photoluminescence measurements for InGaN Based LED Invited International conference

    Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano

    LEDIA'17 

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    Event date: 2017.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Pacifico Yokohama   Country:Japan  

  2. In-situ monitoring of Laser absorption and scattering method during InGaN growth by MOVPE Invited International conference

    Yoshio Honda, Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Kentaro Nagamatsu, Maki Kushimoto, Shugo Nitta, Hiroshi Amano

    The 7th International Symposium on Advanced Science and Technology of Silocon Material 

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    Event date: 2016.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  3. In-situ monitoring of InGaN growth by Laser absorption and scattering method Invited International conference

    Yoshio Honda , Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Kentaro Nagamatsu, Maki Kushimoto, Shugo Nitta, Hiroshi Amano

    SPIE 

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    Event date: 2016.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  4. 世界を照らす青色LED

    本田善央

    第20回東海地区分析研究会講演会 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  5. 発光ダイオード

    本田善央

    応用物理学会 赤﨑・天野記念LEDスクール 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  6. InGaN growth mechanism evaluation by In-situ monitoring based on LAS International conference

    Yoshio Honda,Akira Tamura,Tetsuya Yamamoto, Maki Kushimoto,Hiroshi Amano

    2015 German-Japanese-Spanish Joint Workshop 

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    Event date: 2015.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  7. InGaN 系光デバイスの成長と特性評価

    本田善央,田村彰,山本哲也, 李 昇我, 久志本真希,天野浩

    STR 結晶成長 結晶成長 とデバイス 解析 

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    Event date: 2015.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  8. 世界を照らす青色発光ダイオード

    本田善央

    第58回名大カフェ 

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    Event date: 2015.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  9. InGaN成長中の光散乱を用いたin situ観察と成長機構

    本田善央,田村彰,山本哲也, 久志本真希,天野浩

    第23回シンポジウム「窒化物半導体の成長技術とメカニズム理解 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  10. MOVPE法によるInGaN加圧成長とLAS法によるその場観察

    本田善央,田村彰,山本哲也, 久志本真希,天野浩

    日本結晶成長学会 ナノ構造・エピタキシャル成長分科会 2015年春季講演会 

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    Event date: 2015.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  11. Semi-polar GaN growth on patterned (001)Si substrate by MOVPE International conference

    Y. Honda, M. Kushimoto, and H. Amano

    2015 MRS Spring Meeting & Exhibit 

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    Event date: 2015.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  12. Si基板上半極性面GaN上光デバイスとInGaN結晶成長のその場観察 International conference

    本田善央,田村彰,宇佐美茂佳, 久志本真希,光成正,山口雅史,天野浩

    第5回フォトニックデバイス・応用技術研究会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  13. In-situ monitoring of InGaN MOVPE-growth by Laser Absorption and Scattering method International conference

    Yoshio Honda, Tetsuya Yamamoto, AkiraTamura, Tadashi Mitsunari and Hiroshi Amano

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    Event date: 2015.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  14. GaN基板上GaN系パワーデバイス開発

    ○本田 善央,出来 真斗,天野浩

    JST懇話会 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  15. Ⅲ族窒化物半導体の結晶成長技術とデバイス応用

    本田善央,久志本真希,光成正, 山下康平,山口雅史,天野浩

    第18回VBLシンポジウム 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  16. Pressurized MOVPE of high-In-content InGaN International conference

    A.Tamura, K. Yamashita, T. Mitsunari, Y. Honda and H. Amano

    ICMOVPE-17(Tue-Oral-1-1 ) 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Switzerland  

  17. High pressure InGaN growth on Sapphire substrate by MOVPE International conference

    Yoshio Honda, Tomohiro Doi, Masahito Yamaguchi and Hiroshi Amano

    2013 JSAP-MRS Joint Symposia Symposium J(18p-M6-1) 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  18. 加圧MOVPEによるInGaN結晶成長

    坂倉誠也、土井友博、谷川智之、本田善央、山口雅史、天野浩

    第59回 応用物理学関係連合講演会 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  19. 加工Si基板上への非極性GaN選択成長

    本田善央,谷川智之,村瀬輔,光成正,山下康平,山口雅史

    第2回窒化物半導体結晶成長講演会 

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    Event date: 2010.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  20. 半極性,非極性GaN/Si基板の開発

    本田善央,澤木宣彦

    第6回窒化物半導体研究会 

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    Event date: 2009.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  21. Si基板上半極性面GaNへのInGaNヘテロ成長

    本田善央

    第1回窒化物半導体結晶成長講演会 

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    Event date: 2009.5

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  22. (110)Si 基板を用いた無極性(11-20)GaN の結晶成長

    本田善央

    特定領域研究「窒化物光半導体のフロンティア -材料潜在能力の極限発現-」公開シンポジウム 

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    Event date: 2008.8

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  23. 加工Si 基板上(1-101)及び(11-22)GaN へのInGaN ヘテロ成長

    本田善央

    特定領域研究「窒化物光半導体のフロンティア -材料潜在能力の極限発現-」公開シンポジウム 

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    Event date: 2008.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  24. Series Resistance of s-Si/AlGaN/GaN Structure Grown by MOVPE International conference

    Series Resistance of s-Si/AlGaN/GaN Structure Grown by MOVPE 

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    Event date: 2006.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  25. MOVPE growth and cathodoluminescence properties of GaN microcrystal co-doped with Zn and Si International conference

    MOVPE growth and cathodoluminescence properties of GaN microcrystal co-doped with Zn and Si 

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    Event date: 2006.1

    Language:English   Presentation type:Poster presentation  

  26. GaN micro-structure on Si substrate International conference

    GaN micro-structure on Si substrate 

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    Event date: 2005.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  27. Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate International conference

    Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate 

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    Event date: 2005.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  28. MOVPE選択成長法によるGaN微細構造の作製と評価

    本田善央,山口雅史,澤木宣彦

    第 9 回VBLシンポジウム 

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    Event date: 2005.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  29. Cathodoluminescence properties of InGaN codoped with Zn and Si International conference

    Cathodoluminescence properties of InGaN codoped with Zn and Si 

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    Event date: 2005.8

    Language:English   Presentation type:Poster presentation  

  30. Surface morphology of (1-101) GaN/AlGaN/GaN heterostructure grown on (001)Si substrate by MOVPE

    Y. Honda, T. Hikosaka, E. H.Kim, M. Yamaguchi and N. Sawaki

    第24 回電子材料シンポジウム 24th Electronic Materials Symposium (EMS-24) 

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    Event date: 2005.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  31. MOVPE成長したGaN/AlN/Siの電流電圧特性(Ⅱ)

    近藤広幸,加藤智志,本田善央,山口雅史,澤木宣彦

    第52回応用物理学関係連合講演会 

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    Event date: 2005.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  32. Uniform growth of GaN on AlN templated (111)Si substrate by HVPE International conference

    Uniform growth of GaN on AlN templated (111)Si substrate by HVPE 

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    Event date: 2004.7

    Language:English   Presentation type:Poster presentation  

  33. MOVPE 法による Si 基板上への GaN/AlN ピラミッド構造の作製

    本田善央,中村剛,山口雅史,澤木宣彦

    信学会電子デバイス(ED)研究会 

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    Event date: 2004.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  34. Defects in III-nitrides grown on patterned Si substrate International conference

    Defects in III-nitrides grown on patterned Si substrate 

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    Event date: 2004.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  35. The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE International conference

    The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE 

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    Event date: 2003.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  36. 選択MOVPE法による(111)Si基板上へのAlN/GaNピラミッド構造の作製

    本田善央,鳥飼正幸,山口雅史,澤木宣彦

    第50回応用物理学関係連合講演会 

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    Event date: 2003.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  37. HVPE growth of GaN on a GaN templated (111) Si substrate International conference

    HVPE growth of GaN on a GaN templated (111) Si substrate 

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    Event date: 2002.7

    Language:English   Presentation type:Oral presentation (general)  

  38. Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE International conference

    Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE 

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    Event date: 2001.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  39. Growth of (1-101)GaN on a 7 degree off oriented (001)Si substrate by selective MOVPE International conference

    Growth of (1-101)GaN on a 7 degree off oriented (001)Si substrate by selective MOVPE 

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    Event date: 2001.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  40. MOVPE選択成長法による(111)Si基板上へのクラックフリーGaNの作製

    本田善央,黒岩洋佑,山口雅史,澤木宣彦

    第48回応用物理学関係連合講演会 

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    Event date: 2001.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  41. MOVPE選択成長法によるSi(001)7度オフ基板上への(1-101)面GaNの成長

    本田善央,亀代典史,山口雅史,澤木宣彦

    第48回応用物理学関係連合講演会 

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    Event date: 2001.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  42. Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE International conference

    Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE 

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    Event date: 2000.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  43. Selective area growth and epitaxial lateral over growth of GaN on (111)Si by MOVPE International conference

    The 10th International Conference of Metalorganic Vapor Phase Epitaxy 

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    Event date: 2000.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  44. MOVPE選択成長法による(111)シリコン基板上への六方晶GaN微細構造の作製と制御

    本田善央,大竹洋一,川口靖利,山口雅史,澤木宣彦

    信学会電子デバイス(ED)研究会 

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    Event date: 2000.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  45. MOVPE法による(111)Si基板上へのGaN選択成長(2)

    本田善央,川口靖利,平松和政,澤木宣彦

    第46回応用物理学関係連合講演会 

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    Event date: 1999.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  46. MOVPE法による(111)Si基板上へのGaN選択成長

    本田善央,川口靖利,平松和政,澤木宣彦

    第59回応用物理学会学術講演会 

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    Event date: 1998.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  47. Photocurrent and Photoluminescence measurements for InGaN Based LED Invited

    Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano

    LEDIA'17  2017.4.19 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Pacifico Yokohama  

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Research Project for Joint Research, Competitive Funding, etc. 7

  1. 戦略的国際共同研究プログラム V4プロジェクト

    2015.11 - 2019.3

    JST 

    天野浩

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    Grant type:Competitive

    高In組成InGaNの高品質エピタキシャル成長と次世代ディスプレイ・照明及び通信用光源と高効率太陽電池

  2. 高性能・高信頼性太陽光発電の発電コスト低減技術開発

    2015.4 - 2018.3

    NEDO 

    天野浩

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    Grant type:Competitive

    窒化物半導体を用いた、超高効率・低コストⅢ-Ⅴ化合物太陽電池モジュールの研究開発を行う。

  3. GaNに関する拠点型共通基盤技術開発/GaN縦型パワーデバイスの基盤技術開発

    2014.4 - 2019.2

    戦略的イノベーション創造プログラム 

    須田淳

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    Grant type:Competitive

    GaNのm面上において不純物濃度の低減を行う。高温インプラによりMg注入P型伝導を実現する。

  4. Si基板上半極性GaN上InGaNの偏光制御によるLDの作製

    2011.12 - 2012.3

  5. Si基板上高品質GaNの開発

    2011.1

    国内共同研究 

  6. Si基板上半極性GaN基板を用いた高輝度LEDの開発

    2009.4 - 2010.3

    企業からの受託研究 

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    Si基板上に作製した半極性GaN上へLED構造を作製することで、ピエゾ電界の影響の少ない高輝度発光デバイ椅子の作製を行う。

  7. 高品質半極性・無極性GaN基板の作製

    2008.10 - 2012.3

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    Grant type:Competitive

    GaN系発光デバイスの更なる高輝度化に向けて半極性・無極性基板の作製法の確立が望まれている。本研究では、Siを基材として用いGaNヘテロ成長を行うことで高品質GaNバルク作製を目指す。

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KAKENHI (Grants-in-Aid for Scientific Research) 22

  1. 分極を有する半導体の物理構築と深紫外発光素子への展開

    2013.4 - 2016.3

    科学研究費補助金  特別推進研究

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    Authorship:Coinvestigator(s) 

  2. 半極性GaN/Si上へのInGaN高圧成長及び歪制御によるLDの作製

    2012.4 - 2015.3

    科学研究費補助金  若手研究(A)

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    Authorship:Principal investigator 

  3. Si基板上半極性GaNの積層欠陥、点欠陥抑制による光学的特性の改善

    2008.4 - 2011.3

    科学研究費補助金  若手研究(B)

    本田善央

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    Authorship:Principal investigator 

  4. 加工Si基板上(1-101)及び(11-22)GaNへのInGaNヘテロ成長

    2007.4 - 2009.3

    科学研究費補助金  特定領域研究(公募,A01),課題番号:19032005

    本田 善央

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    Authorship:Principal investigator 

  5. Si基板上A1Nテンプレートを用いたHVPE法による厚膜GaNバルク結晶の作製

    2004.4 - 2007.3

    科学研究費補助金  若手研究(B)

    本田 善央

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    Authorship:Principal investigator 

  6. Development of thermal neutron imaging sensor using BGaN semiconductor detector

    Grant number:19H04394  2019.4 - 2022.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  7. Semiconductor electron beam source that brings fine-area dynamics observation technology to damage sensitive samples

    Grant number:19H00666  2019.4 - 2022.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  8. Creation of a multi-dimensional and scale singularity structure in crystals and understanding of its mechanism

    Grant number:16H06416  2016.6 - 2021.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

    Kamiyama Satoshi

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    Authorship:Coinvestigator(s)  Grant type:Competitive

    Crystal growth mechanism, extended defect formation mechanism and optical properties of a singularity structure composed of GaN nanowire and GaInN-based multi-quantum shells (MQSs) were studied. Tunnel junction to enhance current injection to the MQS was also investigated. Due to a great influence of surface energy in the small-scale singularity structure, shape of the nanowire/MQS structure was found to be greatly dependent on the growth condition. By applying this feature positively, particular shapes of the structure such as very high aspect ratio GaN nanowire could be grown reproducibly. The selective area growth technique made it possible to form periodic nanowire/MQS arrangement was obtained, and room-temperature pulsed operation of a blue MQS laser was demonstrated.

  9. Development of BGaN semiconductor devices for neutron semiconductor detector

    Grant number:16H03899  2016.4 - 2019.3

    Nakano Takayuki

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    Authorship:Coinvestigator(s)  Grant type:Competitive

    Recently, the use application of neutron has expanded, and neutron imaging techniques are expected in various fields. In this study, we proposed and developed the BGaN, a group III nitride semiconductor material, as a neutron semiconductor detector. In the epitaxial growth technology, we clarified that triethylboron (TEB), which was conventionally used as a metalorganic source, causes a gas phase reaction with ammonia in the gas phase to cause deterioration of the crystallinity by forming an adduct. Therefore, we have established a thick film epitaxial growth technology that suppresses gas phase reaction by using trimethylboron (TMB) as a new metalorganic source. The grown thick BGaN film has been used to realize the fabrication of a neutron detection diode, resulting in signal detection by neutron capture.

  10. 戦略的国際共同研究プログラム V4プロジェクト

    2015.11 - 2019.3

    JST  JST 

    天野浩

      More details

    Grant type:Competitive

    高In組成InGaNの高品質エピタキシャル成長と次世代ディスプレイ・照明及び通信用光源と高効率太陽電池

  11. Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devices

    Grant number:25000011  2013 - 2015

    AMANO Hiroshi

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    Authorship:Coinvestigator(s)  Grant type:Competitive

    To improve internal quantum efficiency of AlGaN-based Deep UV (DUV) LED's, two step sublimation growth process of bulk AlN has been established. Ex situ annealing was found to be very effective to improve crystalline quality of very thin AlN on a sapphire substrate. Direct growth of transparent graphene on p-GaN was succeeded. Also control of carbon nanotube electrode was successfully conducted, thereby reducing the operation voltage. Polarization doping was found to be very effective to reduce operating voltage. As a result, high power DUV was commercialized and applied as a light source in a water purification system.

  12. LD fabrication on semipolar GaN/Si by induced pressure InGaN growth and strain control

    Grant number:24686041  2012.4 - 2015.3

    HONDA YOSHIO

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\27170000 ( Direct Cost: \20900000 、 Indirect Cost:\6270000 )

    In this study, we focus on the fabrication of the LD from blue to green region, by using semipolar GaN which could eliminate the internal polarization(piezo polarization). We could get semipolar GaN on patterned Si substrate with stripe shape. GaN and InGaN was taken the large stress due to the difference of the thermal expansion coefficient. In this structure, it was tensile stress along the stripe direction, on the other hand, it was compressive perpendicular direction. We found that InGaN luminous polarization direction was controlled to c axis direction owing to this stress. We made the laser structure on this structure and measured the optical property under high optical excitation condition. As a result, we confirm the stimulate emission from edge of the sample.

  13. A high efficiency III nitride solar cell with graded composition top layer

    Grant number:24656019  2012.4 - 2015.3

    SAWAKI Nobuhiko

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    Authorship:Collaborating Investigator(s) (not designated on Grant-in-Aid)  Grant type:Competitive

    Numerical studies has been done to improve the III-nitride solar cell performances. It was shown that, by adopting a graded composition p-type top layer in a single p-n junction solar cell, the conversion efficiency is enhanced up to 60 times by the internal built-in electric field which enhances the drift motion of photo-excited carriers. Optimum p-type top layer was estimated to be one thirds of the carrier diffusion length. In order to overcome the polarization self-compensation effects in a real device, reduction of Ga vacancy is essential to realize the p-type conduction in the graded layer on (0001) surface.

  14. Development of bridged nitride semiconductor nanowire LED on Si substrate

    Grant number:23651146  2011 - 2012

    HONDA Yoshio

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    Authorship:Principal investigator 

    Grant amount:\3640000 ( Direct Cost: \2800000 、 Indirect Cost:\840000 )

    We succeeded in growth of GaN nanowires (NWs) on trench wall of Si microstructure. In order to reduce adverse effects of a polarization electric fieldand buffer layers, we also succeeded in growth of InGaN NWs on Si substrate without any buffer layer. In contrast to GaN NWs, however, there are some twin boundaries in InGaN NWs. We investigated the relationship between the twin boundaries and the optical properties. Lastly, we attempted to grow GaN NWs on highly oriented pyrolytic graphite(HOPG) substrate in order to apply to future device, and we observed that GaN NWs grew on HOPG substrate.

  15. Growth of high quality InGaN-based superlattice using pulsed modulation plasma assisted molecular beam epitaxy

    Grant number:23656015  2011

    AMANO Hiroshi

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    Authorship:Coinvestigator(s) 

    Growth of high In content thick InGaN layers and InGaN nanowires were conducted by plasma assisted molecular beam epitaxy. InGaN/GaN superlattice structures are found to be very effective to realize low-defect-density high-In-content InGaN. PL intensity of InGaN nanowires is strongly affected by the density of basal stacking faults. It is possible to reduce stacking fault density by growing high In content InGaN nanowires at high growth temperature and high In flux ratio.

  16. Growth of high quality GaN on an Si substrate

    Grant number:22360009  2010 - 2012

    SAWAKI Nobuhiko

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    Authorship:Collaborating Investigator(s) (not designated on Grant-in-Aid) 

    The role of an AlInN buffer layer and an AlN nucleation layer incorporated with small amount of In has been investigated. The threading dislocation density in the grown layer was much reduced by these two layers. The FTIR spectra in a carbon doped (1-101)AlGaN layer showed a local vibration mode which is attributed to Al-C bond. This shows that the p-type conduction is organized by the carbon sitting on an N site.

  17. Growth of high-quality thick InGaN by raised-pressure MOVPE

    Grant number:22246004  2010 - 2012

    AMANO Hiroshi

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    Authorship:Coinvestigator(s) 

    MOVPE reactor having two buffer tanks for the supply of pressurized TMGa and TMIn, has been operated from 1 atm to 10 atm. It was found that with increasing the reactor pressure, thermal conductivity of the gas increases, thus metalorganic precursors were fully decomposed before reaching the substrate. Therefore, reactor was redesigned and repaired. Then, we can successfully grow high In content InGaN at raised pressure. InGaN based-quantum wells grown at 6 atm shows emission wavelength longer than 120 nm compared with that grown at 1 atm.

  18. Optical property improvement of the semipolar GaN on Si by the reduction of stacking faults or point defects.

    Grant number:20760012  2008 - 2010

    HONDA Yoshio

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    Authorship:Principal investigator 

    Grant amount:\4290000 ( Direct Cost: \3300000 、 Indirect Cost:\990000 )

    We made semi-polar GaN on etched Si substrate by selective MOVPE method. In the case of (11-22)GaN, we succeeded the high quality GaN of which dislocation density is less than 10^5/cm^2. In the case of (1-101)GaN, since the dislocation was vended at the initial growth, it did not propagate to the surface of the GaN crystal. As a result, we also achieved the dislocation density of less than10^5/cm^2on this face. We tested the optical property of high quality semi-polar (1-101)GaN. We grew InGaN/GaN MQW structure and excited by pulse laser from top side. The optical detector was set at the side edge and we could get stimulated emission. This is the first result in the world, therefore, it prove that we could get high quality semi-polar GaN crystal.

  19. 加工Si基板上(1-101)及び(11-22)GaNへのInGaNヘテロ成長

    Grant number:19032005  2007 - 2008

    本田 善央

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    Authorship:Principal investigator 

    Grant amount:\6800000 ( Direct Cost: \6800000 )

    昨年度は低In組成領域のInGaNにおいて、(1-101)、(11-22)、(0001)各面でのIn取り込み効率の検討を行った。本年度はこれに加えて緑〜赤色程度までの高組成領域で検討を試みた。(1-101)面においては、Inの取り込み効率が高く、特に低V/III比の条件下で顕著な差がみられた。(0001)、(11-22)面では低In組成領域では同様なIn取り込み効率であった。そこで、Inの供給量を変化してPLピークよりIn取り込み効率を考察した。(11-22)面においては、In供給量に対応して発光ピークがレッドシフトしており、黄色領域の発光まで変化することが可能であった。一方(0001)面では、In供給量が70%程度を超えるあたりで、発光ピーク波長が飽和しており、温度による組成制御が必要であった。この結果から、(11-22)面では高温において高組成InのInGaN成長が可能であり、InGaN結晶品質の向上が期待される。さらに、PLの励起強度依存性を調べた結果、半極性面においてはピークシフトがほとんど見られず、発光強度も線形に変化していた。(0001)面ではQCSEにより励起強度を下げるに従って、レッドシフトと発光強度の著しい減少がみられた。このことから、半極性GaN上へのInGaN結晶を成長することで(1)高品質結晶を得られる可能性があること、(2)ピエゾ電界の影響を大幅に抑制可能であることが明らかとなった。

  20. Selective epitaxial growth of nitride nano-hetero structures on patterned silicon substrate

    Grant number:16106001  2004 - 2008

    SAWAKI Nobuhiko

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    Authorship:Coinvestigator(s) 

  21. Si基板上A1Nテンプレートを用いたHVPE法による厚膜GaNバルク結晶の作製

    Grant number:16760252  2004 - 2006

    本田 善央

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    Authorship:Principal investigator 

    Grant amount:\3700000 ( Direct Cost: \3700000 )

    前年度までに、Si基板を用いてGaN厚膜単結晶の成長を試み、200nm程度のAlN中間層を介してHVPEによりGaN結晶成長を行うと、Si基板のメルトバックエッチングを抑制することが可能であることを見出した。その結果100μm以上の厚膜GaNを得ることに成功している。しかしながら長時間成長においては基板界面からGaNへ向かい変質層が確認された。変質層には20%を超えるSiが含まれ、依然として耐性が完全ではなく、ゆっくりではあるがメルトバックエッチングが起きていることが分かった。昨年度は、AlNテンプレートの成長条件の検討しメルトバックエッチングの抑制を図った。今年度この結果を用い、HVPE成長条件及び選択成長改善により更なるメルトバックエッチングの抑制を試みた。
    成長用基板にはSi(111)を用い、MOVPE法により150nmのAlN上に200nmのGaN薄膜を成長させた。この基板上へSiO_2をマスクとした3/3μmのドットパターンを形成した。この基板をテンプレートとして、HVPE-GaNを成長した。まず、HVPE成長温度を1000〜1100℃と変化させ成長を行った。1100℃の場合、マスクの有無に関わらず全面がメルトバックエッチングをおこしていた。成長温度を1025〜1075℃程度の領域では、マスク無ではメルトバックを起こしていたが、マスクが有る場合メルトバックはほとんど起きなかった。1000℃の場合、どちらの場合もメルトバックエッチングは起こらなかった。これらの結果から、メルトバックの反応は温度に対して非常に敏感であり1000℃付近で急激に抑制できること、選択成長がメルトバック抑制に効果的であることが確認された。以上の実験を踏まえて、厚膜の作製を試みた。選択成長用マスクを施した基板を成長用基板し、1000℃にて5時間行った。得られた結晶は400μm程度の膜厚があり、基板として利用可能な膜厚を満たしていた。そこで、フッ硝酸にてSiをエッチングすることでGaN自立基板を得ることに成功した。XRDにより(0004)のロッキングカーブを測定した結果、半値幅は390arcsecであり、同時に成長したサファイア基板の240arcsecと比較してもそれほど変わらずC軸配向性は良好であった。本研究ではSi基板のAlN結晶品質、HVPEの成長長条件の改善により初めてSi基板を持ちいてGaN自立基板を作製することを可能とした。

  22. SELECTIVE GROWTH OF III-NITRIDE MICROSTRUCTURES ON SILICON SUBSTRATE

    Grant number:13305023  2001 - 2003

    SAWAKI Nobuhiko

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    Authorship:Coinvestigator(s) 

    Adopting the selective area growth method (SAG) in the metal-organic vapor phase epitaxy (MOVPE) of III-nitrides, we have developed the growth of GaN/AlGaN and InGaN/GaN micro-and nano-heterostructure on specific crystal facets. It was found that the formation process and properties of the AlN intermediate layer on the silicon substrate has the essential role to the following growth of III-nitrides. We have achieved a single crystal free from cracks with the size of 200-500 micron across. The diffusion processes of the chemical species in the gas phase and on the surface were found to give an important role to determine the composition of the alloy as well as the layer thicknesses. The role of the inter-surface diffusion of Ga was discussed in detail.
    The growth of (1-101) GaN was performed on a 7 degree off oriented (001) silicon substrate. By declining the axis, we achieved crack free and extremely flat N-surface for the first time. Because of the flat interface, the optical properties of an InGaN/GaN double heterostructure exhibited a sharp edge emission. Using the material we achieve a optical waveguide with extremely low j optical loss for the near band edge wavelengths. Optical spectra and decay processes of excitons were investigated with femto-second spectroscopy and it was found that the decay rate is decreased by reducing the size of dot/disk.
    The method was developed to the growth of a thick GaN by hydride vapor phase epitaxy (HyPE). Using a thick MN intermediate layer, we achieved a uniform 23 micron thick GaN layer on (111)Si.

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Industrial property rights 11

  1. 発光層形成用基材、発光体及び発光物質

    本田 善央、澤木 宣彦、柳瀬 康行、一柳 昌幸、稲岡 宏弥、森 連太郎、木山 明

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    Applicant:国立大学法人名古屋大学、トヨタ自動車株式会社

    Application no:特許出願2005-244354  Date applied:2005.8

    Announcement no:特許公開2007-56164 

    Country of applicant:Domestic  

  2. 発光層形成用基材、発光体及び発光物質

    本田 善央, 澤木 宣彦, 柳瀬 康行, 一柳 昌幸, 稲岡 宏弥, 森 連太郎, 木山 明

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    Applicant:国立大学法人名古屋大学、トヨタ自動車株式会社

    Application no:特許出願2005-244354  Date applied:2005.8

    Announcement no:特許公開2007-56164 

  3. カーボンドープ半導体膜、半導体素子、及びこれらの製造方法

    澤木 宣彦、山口 雅史、本田 善央、彦坂 年輝、小出 典克、真部 勝英

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    Applicant:北川工業株式会社

    Application no:特許出願2004-92289  Date applied:2004.3

    Announcement no:特許公開2005-277342 

    Country of applicant:Domestic  

  4. 窒化物半導体結晶層の作製方法、窒化物半導体結晶層、及び窒化物半導体結晶層作製用の基材

    澤木 宣彦、本田 善央、西村 慶之

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    Applicant:国立大学法人名古屋大学

    Application no:特許出願2003-370790  Date applied:2003.10

    Announcement no:特許公開2005-136200 

    Country of applicant:Domestic  

  5. 半導体素子構造、電子エミッタ、及び半導体素子構造の作製方法

    澤木 宣彦、本田 善央

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    Applicant:名古屋大学長

    Application no:特許出願2002-280182  Date applied:2002.9

    Announcement no:特許公開2004-119168 

    Country of applicant:Domestic  

  6. 半導体発光素子およびその製造方法

    澤木 宣彦、本田 善央、亀代 典史、山口 雅史、田中 成泰、小出 典克

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    Applicant:澤木 宣彦、シャープ株式会社

    Application no:特許出願2002-38263  Date applied:2002.2

    Announcement no:特許公開2003-243702 

    Country of applicant:Domestic  

  7. 半導体発光素子の製造方法

    小出 典克、山本 淳次、堂北 剛、澤木 宣彦、本田 善央、黒岩 洋佑、山口 雅史

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    Applicant:シャープ株式会社、澤木 宣彦

    Application no:特許出願2001-338536  Date applied:2001.11

    Announcement no:特許公開2003-142728 

    Country of applicant:Domestic  

  8. 半導体レーザ素子およびその製造方法

    澤木 宣彦、本田 善央、亀代 典史、山口 雅史、小出 典克、伊藤 茂稔、大野 智輝、古川 勝紀

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    Applicant:澤木 宣彦、シャープ株式会社

    Application no:特許出願2001-240413  Date applied:2001.8

    Announcement no:特許公開2002-246697 

    Country of applicant:Domestic  

  9. 窒化物半導体の製造方法

    澤木 宣彦、本田 善央、小出 典克

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    Applicant:澤木 宣彦、シャープ株式会社

    Application no:特許出願2001-191227  Date applied:2001.6

    Announcement no:特許公開2003-8061 

    Country of applicant:Domestic  

  10. 化合物半導体単結晶の製造方法およびその利用

    澤木 宣彦、山口 雅史、本田 善央

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    Applicant:三菱化学株式会社

    Application no:特許出願2001-46837  Date applied:2001.2

    Announcement no:特許公開2002-249400 

    Country of applicant:Domestic  

  11. 半導体素子

    澤木 宣彦、本田 善央、小出 典克

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    Applicant:澤木 宣彦、シャープ株式会社

    Application no:特許出願2000-382164  Date applied:2000.12

    Announcement no:特許公開2002-185041 

    Country of applicant:Domestic  

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Teaching Experience (On-campus) 10

  1. 電気電子情報工学学生実験

    2013

  2. 電気回路論および演習

    2013

  3. 電気電子情報工学学生実験

    2013

  4. 電気電子情報工学学生実験

    2012

  5. 電気電子情報工学学生実験

    2012

  6. 電気回路論および演習

    2012

  7. 電気電子情報工学学生実験

    2011

  8. 電気電子情報工学学生実験

    2011

  9. 電気回路論および演習

    2011

  10. 電気回路論演習

    2004

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Teaching Experience (Off-campus) 1

  1. 電気電子工学特論I

    2015.4 Aoyama Gakuin University)

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    Level:Postgraduate