Updated on 2021/03/31

写真a

 
HONDA, Yoshio
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Associate professor
Title
Associate professor
Contact information
メールアドレス

Degree 1

  1. doctor of engineering ( 2003.3   Nagoya University ) 

Research Interests 2

  1. 電子材料

  2. 電子材料

Research Areas 1

  1. Others / Others  / Engineering@Electric and Electronic Engineering@Electronic and Electric Materials Engineering

Current Research Project and SDGs 3

  1. Si基板上半極性GaNの積層欠陥、点欠陥抑制による光学的特性の改善

  2. 加工Si基板を用いた半極性GaN上InGaN結晶に関する研究

  3. Crystal growth of thick nitride-semiconductor on Silicon substrate by HVPE

Research History 9

  1. Aoyama Gakuin University

    2016.4

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    Country:Japan

  2. Aoyama Gakuin University

    2016.4

  3. Nagoya University   Associate professor

    2015.10

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    Country:Japan

  4. Nagoya University   Graduate School of Engineering Department of Electrical Engineering and Computer Science

    2014.12

  5. 名古屋大学大学院   工学研究科電子情報システム専攻   准教授

    2014.4 - 2015.9

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    Country:Japan

  6. Chubu University

    2013.9 - 2017.3

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    Country:Japan

  7. スウェーデン王国・リンショピン大学   客員研究員

    2007.8 - 2008.3

  8. 名古屋大学大学院   工学研究科電子情報システム専攻   助教授

    2007.4 - 2014.3

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    Country:Japan

  9. 名古屋大学大学院   工学研究科電子情報システム専攻   助教授

    2003.4 - 2007.3

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    Country:Japan

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Education 3

  1. Nagoya University   Graduate School, Division of Engineering   Electrical engineering

    - 2003

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    Country: Japan

  2. Nagoya University   Graduate School, Division of Engineering   Electrical engineering

    - 2003

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    Country: Japan

  3. Nagoya University   Faculty of Engineering   Electrical engineering

    - 1998

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    Country: Japan

Professional Memberships 3

  1. 日本結晶成長学会ナノ構造・エピタキシャル成長分科会

  2. The Japan Society of Applied Phisics

  3. 日本結晶成長学会ナノ構造・エピタキシャル成長分科会

Committee Memberships 27

  1. LEDIA19   プログラム委員長  

    2019.4 - 2020.3   

  2. ICNS14   実行副委員長  

    2019.3 - 2021.10   

  3. APWS2019   展示委員  

    2018.11 - 2019.10   

  4. LEDIA18   庶務委員  

    2018.4 - 2019.3   

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    Committee type:学協会

  5. ICMOVPE2018   財務委員  

    2017.4 - 2018.12   

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    Committee type:学協会

  6. ISPLASMA2018   プログラム委員  

    2017.4 - 2018.3   

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    Committee type:学協会

  7. LEDIA18   プログラム委員  

    2017.4 - 2018.3   

  8.   庶務委員  

    2016.8 - 2019.3   

  9.   庶務委員  

    2016.6 - 2017.5   

  10.   副実行委員長  

    2016.4 - 2017.3   

  11.   プログラム委員  

    2016.4 - 2017.3   

  12. ISPLASMA2015   実行委員  

    2015.4 - 2016.3   

  13. ISGN-6   総務幹事  

    2014.7 - 2016.3   

  14. LEDIA15   総務委員  

    2014.4 - 2015.3   

  15. 学振162委員会   研究会企画幹事  

    2013.4   

  16. 学振162委員会   研究会企画幹事  

    2013.4   

  17. ICCGE2016   現地実行委員  

    2013.4 - 2016.3   

  18. ISPLASMA2014   広報委員  

    2013.4 - 2014.3   

  19. LEDIA14   庶務・プログラム・現地委員  

    2013.4 - 2014.3   

  20. LEDIA13   プログラム・現地委員  

    2012.11 - 2013.3   

  21. ISPLASMA2013   現地実行委員  

    2012.4 - 2013.3   

  22. IWN2012   庶務委員  

    2011.2 - 2012.10   

  23. EMS30-31   会場委員  

    2010.10 - 2012.7   

  24. APWS2011   現地実行委員  

    2010.6 - 2011.6   

  25. IWBNS-7   現地実行委員  

    2010.4 - 2011.3   

  26. ISGN-2   現地実行委員  

    2007.8 - 2008.8   

  27. IWN2006   現地実行委員  

    2005.10 - 2006.10   

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Awards 2

  1. 日本結晶成長学会ナノ構造・エピタキシャル成長分科会研究奨励賞

    2009.5  

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    Country:Japan

  2. 日本結晶成長学会ナノ構造・エピタキシャル成長分科会研究奨励賞

    2009.5  

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    Country:Japan

 

Papers 338

  1. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching Reviewed

    Kumabe Takeru, Ando Yuto, Watanabe Hirotaka, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abd538

    Web of Science

  2. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces Reviewed

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 24 )   2020.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0028516

    Web of Science

  3. Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps Reviewed

    Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Kojima Kazunobu, Chichibu Shigefusa F.

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 12 )   2020.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/abcb49

    Web of Science

  4. Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate. Reviewed

    Yang X, Pristovsek M, Nitta S, Liu Y, Honda Y, Koide Y, Kawarada H, Amano H

    ACS applied materials & interfaces   Vol. 12 ( 41 ) page: 46466 - 46475   2020.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsami.0c11883

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    PubMed

  5. Optical properties of neodymium ions in nanoscale regions of gallium nitride Reviewed

    Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

    OPTICAL MATERIALS EXPRESS   Vol. 10 ( 10 ) page: 2614 - 2623   2020.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/OME.401765

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  6. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures Reviewed

    Sato Shin-ichiro, Deki Manato, Nishimura Tomoaki, Okada Hiroshi, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Ohshima Takeshi

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Vol. 479   page: 7 - 12   2020.9

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    DOI: 10.1016/j.nimb.2020.06.007

    Web of Science

  7. Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces Reviewed

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 10 )   2020.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0010774

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  8. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO Reviewed

    Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 8 )   2020.8

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  9. Pulsed-flow growth of polar, semipolar and nonpolar AlGaN Reviewed

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF MATERIALS CHEMISTRY C   Vol. 8 ( 25 ) page: 8668 - 8675   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/d0tc01369b

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  10. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures Reviewed International journal

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 7 ) page: .   2020.7

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  11. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures Reviewed

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 7 ) page: .   2020.7

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  12. Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO Reviewed International journal

    Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 6 ) page: .   2020.6

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  13. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Reviewed

    Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 539   page: .   2020.6

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    Web of Science

  14. Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO Reviewed

    Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 6 ) page: .   2020.6

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  15. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Reviewed

    Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 539   page: .   2020.6

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  16. Impact of high-temperature implantation of Mg ions into GaN Reviewed International journal

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 5 ) page: .   2020.5

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    Web of Science

  17. Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature Reviewed

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

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    DOI: 10.1002/pssb.201900554

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  18. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

    Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J, Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 116 ( 12 )   2020.3

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    DOI: 10.1063/1.5145017

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  19. Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 35 ( 3 )   2020.3

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    DOI: 10.1088/1361-6641/ab63f1

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  20. Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode

    Sato Daiki, Honda Anna, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

    MICROELECTRONIC ENGINEERING   Vol. 223   2020.2

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    DOI: 10.1016/j.mee.2020.111229

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  21. Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

    Ye Zheng, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 2 )   2020.2

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    DOI: 10.35848/1347-4065/ab6fb0

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  22. Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

    Yamamoto K, Nakano K, Tanaka A, Honda Y, Ando Y, Ogura M, Matsumoto M, Anada S, Ishikawa Y, Amano H, Hirayama T

    Microscopy (Oxford, England)   Vol. 69 ( 1 ) page: 1 - 10   2020.2

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    DOI: 10.1093/jmicro/dfz037

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  23. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

    Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 217 ( 14 )   2020.1

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    DOI: 10.1002/pssa.201900955

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  24. Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    2D MATERIALS   Vol. 7 ( 1 )   2020.1

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    DOI: 10.1088/2053-1583/ab46e6

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  25. Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum

    Sato Daiki, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 38 ( 1 )   2020.1

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    DOI: 10.1116/1.5120417

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  26. Characterization of AlGaN multiple-quantum-wells grown on <i>c</i>-plane AlN/sapphire templates with macro-steps

    Kojima Kazunobu, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    Journal of the Japanese Association for Crystal Growth   Vol. 47 ( 3 )   2020

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    Publishing type:Research paper (scientific journal)   Publisher:The Japanese Association for Crystal Growth  

    <p>  The microscopic structural and optical characteristics of AlGaN light-emitting diodes (LEDs) fabricated on the AlN templates with dense macrosteps are shown to clarify the origin of their high internal quantum efficiency of radiation (IQE). The cross-sectional transmission electron microscopy observations under the high-angle annular dark field scanning mode and microscopic energy dispersive X-ray spectroscopy revealed that the AlGaN cladding layer under the AlGaN quantum well (QW) layer had a microscopic compositional modulation, which originates from the macrosteps at the AlN template surface. Moreover, Ga-rich portions in the cladding layer behaved as current micropaths, and the micropaths are connected with the carrier localization structure formed in QWs. The in-plane cathodoluminescence (CL) spectroscopy showed a significant inhomogeneity of the CL characteristics. The gentle slopes at the sample surface showed brighter emissions with a lower peak photon energy, confirming the carrier localization. This carrier localization structure in the QWs combined with the current micropaths in the cladding layer can increase the IQE as well as external quantum efficiency of the AlGaN LEDs.</p>

    DOI: 10.19009/jjacg.47-3-04

    CiNii Article

  27. Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

    Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2019.12

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    DOI: 10.1002/pssb.201900553

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  28. Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

    Nagasawa Yosuke, Sugie Ryuichi, Kojima Kazunobu, Hirano Akira, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    JOURNAL OF APPLIED PHYSICS   Vol. 126 ( 21 )   2019.12

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    DOI: 10.1063/1.5125623

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  29. Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

    Dinh Duc V, Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 34 ( 12 )   2019.12

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    DOI: 10.1088/1361-6641/ab4d2c

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  30. Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency.

      Vol. 19 ( 23 )   2019.11

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    DOI: 10.3390/s19235107

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  31. Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

    Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SCIENTIFIC REPORTS   Vol. 9 ( 1 ) page: 15802   2019.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-019-52067-y

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  32. V-shaped dislocations in a GaN epitaxial layer on GaN substrate

    Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

    AIP ADVANCES   Vol. 9 ( 9 )   2019.9

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    DOI: 10.1063/1.5114866

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  33. Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Torigoe Kazuhisa, Kushimoto Maki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 7 )   2019.7

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    DOI: 10.7567/1347-4065/ab2657

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  34. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

    Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 516   page: 63 - 66   2019.6

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    DOI: 10.1016/j.jcrysgro.2019.03.025

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  35. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current International journal

    Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 114 ( 23 )   2019.6

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    DOI: 10.1063/1.5097767

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  36. Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

    Liu Qiang, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab124e

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  37. Frontiers of Nitride Semiconductor Research FOREWORD

    Chichibu Shigefusa F, Kumagai Yoshinao, Kojima Kazunobu, Deura Momoko, Akiyama Toru, Arita Munetaka, Fujioka Hiroshi, Fujiwara Yasufumi, Hara Naoki, Hashizume Tamotsu, Hirayama Hideki, Holmes Mark, Honda Yoshio, Imura Masataka, Ishii Ryota, Ishitani Yoshihiro, Iwaya Motoaki, Kamiyama Satoshi, Kangawa Yoshihiro, Katayama Ryuji, Kawakami Yoichi, Kawamura Takahiro, Kobayashi Atsushi, Kuzuhara Masaaki, Matsumoto Koh, Mori Yusuke, Mukai Takashi, Murakami Hisashi, Murotani Hideaki, Nakazawa Satoshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab1411

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  38. Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors International journal

    Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab06b9

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  39. Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability International journal

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab106c

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  40. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates International journal

    Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab1250

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  41. Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

    Nan Hu, Dinh Duc V, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab1252

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  42. Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285nm deep-ultraviolet LEDs grown on AlN templates having macrosteps

    Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Ipponmatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 6 )   2019.6

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    DOI: 10.7567/1882-0786/ab21a9

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  43. Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 514   page: 13 - 13   2019.5

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    DOI: 10.1016/j.jcrysgro.2019.02.058

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  44. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

    Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 512   page: 78 - 83   2019.4

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    DOI: 10.1016/j.jcrysgro.2019.02.013

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  45. Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method

    Yamada Jumpei, Usami Shigeyoshi, Ueda Yuki, Honda Yoshio, Amano Hiroshi, Maruyama Takahiro, Naritsuka Shigeya

    Jpn. J. Appl. Phys.   Vol. 58 ( 4 )   2019.3

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    DOI: 10.7567/1347-4065/aafe70

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  46. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

    Zhibin Liu, Shugo Nitta, Shigeyoshi Usami, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 509   page: 50 - 53   2019.3

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    Wafer trays with different gaps (the distance between the top of the pocket and the bottom of the wafer) were used to grow InGaN/GaN multiple quantum wells (MQWs) in a horizontal metalorganic vapor phase epitaxy (MOVPE) reactor. The numerical reactor simulation revealed that at the similar surface temperature the gas phase temperature around the wafer increases due to an increased wafer tray temperature. This increased gas phase temperature is expected to increase the effective V/III ratio by enhanced NH3 decomposition. Photoluminescence (PL) intensities of long-wavelength MQWs increased at the same indium content by the enhanced gas phase temperature, while the emission became narrow. This is related to a smoother topography at higher gas phase temperatures.

    DOI: 10.1016/j.jcrysgro.2018.12.007

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  47. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

    Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

    MATERIALS   Vol. 12 ( 5 )   2019.2

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    DOI: 10.3390/ma12050689

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    PubMed

  48. Morphological study of InGaN on GaN substrate by supersaturation

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 508   page: 58 - 65   2019.2

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    DOI: 10.1016/j.jcrysgro.2018.12.028

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  49. How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

    Hu Nan, Dinh Duc V, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 507   page: 205 - 208   2019.2

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    DOI: 10.1016/j.jcrysgro.2018.11.013

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  50. Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

    Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

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    A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p-n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p-n diode with a simple edge termination that has a drift layer etched deeply and vertically. A device simulation revealed that the electric field was more relaxed at the device edge and applied uniformly in the entire device with increasing etching depth. We fabricated the simulated structure and succeeded in reducing the leakage current and improving the breakdown voltage. With this structure, a stable avalanche breakdown can be observed. (C) 2019 The Japan Society of Applied Physics

    DOI: 10.7567/1882-0786/aafdb9

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    CiNii Article

  51. Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps

    Kojima K, Nagasawa Y, Hirano A, Ippommatsu M, Honda Y, Amano H, Akasaki I, Chichibu S. F

    APPLIED PHYSICS LETTERS   Vol. 114 ( 1 )   2019.1

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    DOI: 10.1063/1.5063735

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  52. Observation of Dopant Concentration in GaN Semiconductor by High Sensitivity Electron Holography

    Nakano Kiyotaka, Honda Yoshio, Amano Hiroshi, Matsumoto Miko, Anada Satoshi, Yamamoto Kazuo, Ishikawa Yukari, Hirayama Tsukasa, Ando Yuto, Ogura Masaya, Tanaka Atsushi

    Materia Japan   Vol. 58 ( 2 ) page: 103-103 - 103   2019

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    DOI: 10.2320/materia.58.103

    CiNii Article

  53. Electronic structure analysis of core structures of threading dislocations in GaN

    Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)     page: .   2019

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  54. Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method

    Kashima Masahiro, Sato Daiki, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi, Iijima Hokuto, Meguro Takashi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 36 ( 6 )   2018.11

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    DOI: 10.1116/1.5048061

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  55. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

    Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 10 )   2018.10

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    DOI: 10.7567/JJAP.57.105501

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  56. High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 498   page: 377 - 380   2018.9

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    DOI: 10.1016/j.jcrysgro.2018.07.015

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  57. Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Murakami Satoshi, Kushimoto Maki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 9 )   2018.9

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    DOI: 10.7567/JJAP.57.091001

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  58. Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

    Barry Ousmane I, Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 12 ( 8 )   2018.8

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    DOI: 10.1002/pssr.201800124

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  59. Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering

    Ueoka Yoshihiro, Deki Meneto, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 7 )   2018.7

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    DOI: 10.7567/JJAP.57.070302

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  60. Study on the Main-Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN-Based DUV-LEDs

    Kiho Yamada, Yosuke Nagasawa, Shoko Nagai, Akira Hirano, Masamichi Ippommatsu, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki

    Physica Status Solidi (A) Applications and Materials Science   Vol. 215 ( 10 )   2018.5

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    The main chain structure of optically isotropic amorphous fluorine resin for encapsulating AlGaN-based deep-ultraviolet LEDs (λ &lt
    300 nm) is studied. One type of amorphous fluorine resin has a five-membered ring with a single oxygen atom and the other has that one with two oxygen atoms. Reliability testing is performed using AlGaN-based LEDs of 262 and 289 nm. For the resin with two oxygen atoms in the ring, visible damage to the electrode and significantly increased leakage current are considered to been caused by the photolysis of the ring induced by irradiation with deep-ultraviolet light. In contrast, electrode damage and increased leakage are not observed in the case of the resin with the single-oxygen ring.

    DOI: 10.1002/pssa.201700525

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    Scopus

  61. m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates

    Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    Physica Status Solidi (A) Applications and Materials Science   Vol. 215 ( 9 )   2018.5

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    In this study, GaN m-plane Schottky barrier diodes are fabricated by metalorganic vapor-phase epitaxy (MOVPE) on several off-angle gallium nitride (GaN) substrates, and the off-cut angle dependence of impurity incorporation is investigated. We show that the MOVPE layer on the substrate inclined 5° toward the [000–1] direction has extremely low impurity incorporation. These results provide important suggestions for the fabrication of m-plane power devices.

    DOI: 10.1002/pssa.201700645

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    Scopus

  62. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 5 )   2018.5

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    DOI: 10.7567/APEX.11.051002

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  63. Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching

    Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, Hiroshi Amano

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 255 ( 5 )   2018.5

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    A gallium nitride (GaN) epitaxial layer with a low density of threading dislocations is successfully grown on a silicon substrate by using in situ gas etching. Silicon nitride (SiNx) film is used as a mask, and ammonia is intermittently supplied in hydrogen ambient during the etching. After etching, high-density deep pits appeared on the surface of a GaN template layer and corresponded to the threading dislocations in the layer. In this novel method, before growing an additional GaN layer on the template GaN layer, a second SiNx layer is deposited after the etching process, and this layer prevents GaN nuclei from growing on the upper side-walls of the pits. By using this method, the density of threading dislocations of the GaN surface is reduced to 6.7x10(7)cm(-2). This method is cost effective, completing all the necessary processes in one growth run without taking samples out from a metalorganic chemical vapor deposition (MOCVD) reactor.

    DOI: 10.1002/pssb.201700387

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  64. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Sugawara, Yong-Zhao Yao, Yukari Ishikawa

    APPLIED PHYSICS LETTERS   Vol. 112 ( 18 )   2018.4

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    Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that lc pure screw dislocations are related to the reverse leakage in vertical p-n diodes. Published by AIP Publishing.

    DOI: 10.1063/1.5024704

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  65. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy International journal

    Xu Yang, Shugo Nitta, Kentaro Nagamatsu, Si-Young Bae, Ho-Jun Lee, Yuhuai Liu, Markus Pristovsek, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 482   page: 1 - 8   2018.1

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    Hexagonal boron nitride (h-BN) was directly grown on sapphire substrate using alternating ammonia (NH3) and triethylboron (TEB) supply (pulsed mode) in metalorganic vapor phase epitaxy. The best condition is when just enough NH3 is supplied to fully convert the TEB within one cycle. Excess NH3 caused islands on h-BN film surface while a lack of NH3 does not form h-BN at all. The epitaxial relationship between grown h-BN layer and c-plane sapphire was confirmed to be [0001](h-BN)||[0001](sapphire) and [10-10](h-BN)||[11-20](sapphire). It is known that, compared to AlN, BN requires higher V/III ratios for good crystallinity, which due to severe gas-phase reactions is difficult to achieve using continuous supply. Thus using pulsed mode the FWHM of the symmetric (0002) diffraction was almost halved and the growth rate was several times faster. (C) 2017 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2017.10.036

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  66. Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes

    Yates Luke, Pavlidis Georges, Graham Samuel, Usami Shigeyoshi, Nagamatsu Kentaro, Honda Yoshio, Amano Hiroshi

    PROCEEDINGS OF THE 17TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2018)     page: 831-837   2018

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  67. Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN

    Nakano Takashi, Araidai Masaaki, Shiraishi Kenji, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8   Vol. 86 ( 12 ) page: 41 - 49   2018

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    DOI: 10.1149/08612.0041ecst

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  68. Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes

    Yates Luke, Pavlidis Georges, Graham Samuel, Usami Shigeyoshi, Nagamatsu Kentaro, Honda Yoshio, Amano Hiroshi

    PROCEEDINGS OF THE 17TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2018)     page: 831-837   2018

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  69. Charge-to-time converting leading-edge discriminator for plastic-scintillator signals International journal

    T. Ishikawa, Y. Takeda, Y. Honda, Y. Inoue, H. Kanda, S. Kido, Y. Matsumura, M. Miyabe, I. Nagasawa, H. Shimizu, T. Takeda, A. O. Tokiyasu, Y. Tsuchikawa, H. Yamazaki

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT   Vol. 875   page: 193 - 200   2017.12

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    We have developed a charge-to-time converting (QTC) leading-edge discriminator for plastic-scintillator signals, which is packaged in a NIM-standard double-width module. The pulse width of the discriminator output is approximately proportional to the charge integration of input signals up to 40-50 pC. The non-linearity is 20%, 10%, 4%, and 2% at maximum for the input charges below 7 pC, for 7-10 pC, for 10-20 pC, and above 20 pC, respectively, for the minimum input charges larger than 2 pC. The discriminator could be suitable in the measurement of the timing and charge of plastic-scintillator signals together with a multi-hit time-to-digital converter (TDC) module. (C) 2017 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.nima.2017.09.040

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  70. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes International journal

    Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano

    APPLIED PHYSICS LETTERS   Vol. 111 ( 12 )   2017.9

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    Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.

    DOI: 10.1063/1.4994627

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  71. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations International journal

    Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, Hiroshi Amano

    APPLIED PHYSICS EXPRESS   Vol. 10 ( 8 )   2017.8

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    The internal electric fields in III-polar (0001), N-polar (0001), and semipolar (1011) InGaN/GaN light-emitting diodes were investigated by electroreflectance (ER) spectroscopy. The ER spectra reflected the difference in the direction and strength of internal electric fields. Phase analyses of the ER signal revealed that only III-polar InGaN wells have the opposite direction of the internal electric field at zero bias voltage; this finding is in good agreement with the results of numerical analyses. Quantitative analyses of internal electric fields were conducted by the linewidth analyses of ER spectra. Our experimental results indicate that the absolute value of internal electric fields can be measured from ER spectra. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/APEX.10.082101

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  72. Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants

    Si-Young Bae, Kaddour Lekhal, Ho-Jun Lee, Jung-Wook Min, Dong-Seon Lee, Yoshio Honda, Hiroshi Amano

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 254 ( 8 )   2017.8

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    Injecting current with a uniform carrier concentration is important for applications with three-dimensional architectures such as vertical power devices or displays. In III-nitride nanostructures, dopants not only incorporate differently depending on the surface orientation but can also seriously affect the kinetic equilibrium shapes of the nanorods. Herein, we report selective-area growth of doped GaN nanorods grown by pulsed-mode metalorganic chemical vapor deposition. Two dopants, Si and Mg, were employed as donor and acceptor atoms, respectively, for a mono-doping approach. Furthermore, a mixed flow of Si and Mg was supplied for a co-doping approach. We compared the morphological effects and growth rates of each doped GaN nanorod array. Then, we proposed appropriate growth mechanisms for the doped GaN nanorods on the basis of our structural characterizations. These results might extend the morphological functionality of GaN nanorods by including doping and may also provide an appropriate foundation for the design of nanostructure-based electronic or photonic devices. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssb.201600722

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  73. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE International journal

    Atsushi Tanaka, Ousmane Barry, Kentaro Nagamatsu, Junya Matsushita, Manato Deki, Yuto Ando, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

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    In this study, GaN m-plane Schottky barrier diodes fabricated with a metalorganic vapor-phase epitaxy on a GaN substrate were investigated using emission microscope, photoluminescence, and cathodoluminescence. In addition, facet dependence of leakage current under reverse-biased condition was observed. We showed that the leakage-current distribution was caused by the facet dependence of the carrier concentration and oxygen concentration. These results can provide important suggestions for the fabrication of m-plane devices. (a) four-faceted hillocks on m-plane GaN MOVPE sample, facet dependence of (b) leakage current and (c) PL peak intensity of the m-plane GaN Schottky barrier diode.

    DOI: 10.1002/pssa.201600829

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  74. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes International journal

    Shigeyoshi Usami, Ryosuke Miyagoshi, Atsushi Tanaka, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

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    We investigate the influence of crystal defects on p-type GaN grown by metalorganic vapor phase epitaxy. Sets of p-type GaN films were grown on sapphire substrates and on free-standing GaN (F-GaN) substrates simultaneously using various Et-Cp2Mg flow rates. Although there is a difference of two orders of magnitude between the threading dislocation densities of p-type GaN grown on sapphire and F-GaN substrates, there is no significant difference in hole concentration. However, there are problems with the surface morphology of p-type GaN grown on sapphire. The deterioration of the surface was caused by the difference in nanopipe density. The electrical properties of a p-n junction diode formed on sapphire with a high density of nanopipes were observed using emission microscopy under both forward- and reverse-bias conditions. Our results demonstrate that the nanopipes are electrically inactive, and that other types of threading dislocation have more influence on the current-voltage characteristics.

    DOI: 10.1002/pssa.201600837

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  75. Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system International journal

    Kentaro Nagamatsu, Shugo Nitta, Zheng Ye, Hirofumi Nagao, Shinichi Miki, Yoshio Honda, Hiroshi Amano

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 254 ( 8 )   2017.8

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    In this study, by using time-of-flight (TOF) high-resolution and high-sensitivity mass spectrometry measurements, the decomposition of trimethylgallium into dimethylgallium and monomethylgallium along with its adduct formation with NHx in a commercially available horizontal metalorganic vapor-phase epitaxy (MOVPE) reactor with a resistive heater was investigated and observed in more detail than previously reported. The results confirmed the use of the TOF monitoring system in analyzing the elementary reaction process in actual MOVPE systems. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssb.201600737

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  76. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer International journal

    Zheng Sun, Peifeng Song, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 866 - 869   2017.6

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    A-plane GaN was attempted to be grown on (11-20) 4H-SiC bulk substrate without using a traditional thick buffer layer. By inducing TMAl treatment before the GaN growth step and using both a low pressure and V/III ratio, the interlayer thickness of the a-plane GaN/SiC was reduced to 1.7 +/- 0.5 nm. The ultrathin interlayer was observed to be either AlN or AlGaN with a low Ga composition. This study is aimed to contribute to the understanding of GaN growth on the sidewalls of c-plane trench structure SiC. The ultrathin growth technique is also hoped to be applied to the fabrication of GaN-based vertical structure nonpolar optical or electrical devices.

    DOI: 10.1016/j.jcrysgro.2017.01.031

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  77. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer International journal

    Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Akira Tamura, Takafumi Suzuki, Maki Kushimoto, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 547 - 551   2017.6

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    We successfully grew semipolar (10 (1) over bar3) and (10 (1) over bar5) GaN films on Si(001) substrates employing metal-organic chemical vapor deposition (MOCVD) by inserting a directionally sputtered AlN (DS-AlN) buffer layer. To improve the crystal quality of the orientation-controlled semipolar (10 (1) over bar3) and (10 (1) over bar5) GaN films, a two-step epitaxial lateral overgrowth (ELO) process was performed with a striped mask. According to low-temperature cathodoluminescence (LT-CL) characterization, the ELO results in a coalesced morphology and a low defect density of &lt; 2.72x10(8) cm(-2) for both semipolar (10&lt;(1)over bar&gt;3) and (10 (1) over bar5) GaN films. For comparing the properties of planar and ELO semipolar GaN, a rocking curve of x-ray diffraction (XRD) and low-temperature photoluminescence (LT-PL) spectra was measured. The crystal orientation of semipolar GaN films was confirmed using electron backscatter diffraction (EBSD).

    DOI: 10.1016/j.jcrysgro.2016.11.116

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  78. Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10(1)over-bar0) GaN homoepitaxial layers International journal

    Ousmane I. Barry, Atsushi Tanaka, Kentaro Nagamatsu, Si-Young Bae, Kaddour Lekhal, Junya Matsushita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 552 - 556   2017.6

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    We have investigated the effect of V/III ratio on the surface morphology, impurity concentration and electrical properties of m-plane (10 (1) over bar0) Gallium Nitride (GaN) homoepitaxial layers. Four-sided pyramidal hillocks are observed on the nominally on-axis m-plane GaN films. Hillocks sizes relatively increase by increasing the V/III ratio. All facets of pyramidal hillocks exhibit well-defined step-terrace features. Secondary ion mass spectrometry depth profiles reveal that carbon impurities decrease by increasing the V/III ratio while the lowest oxygen content is found at an optimized V/III ratio of 900. Vertical Schottky barrier diodes fabricated on the m-GaN samples were characterized. Low leakage current densities of the order of 10(-10) A/cm(2) at -5 V are obtained at the optimum V/III ratio. Oxygen impurities and screw-component dislocations around hillocks are found to have more detrimental impact on the leakage current mechanism.

    DOI: 10.1016/j.jcrysgro.2016.12.012

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  79. Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output

    Kaneda Michiko, Pernot Cyril, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 6 )   2017.6

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    DOI: 10.7567/JJAP.56.061002

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  80. Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer International journal

    S. -Y. Bae, K. Lekhal, H. -J. Lee, T. Mitsunari, J. -W. Min, D. -S. Lee, M. Kushimoto, Y. Honda, H. Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 110 - 113   2017.6

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    Severe melt-back etching has forced the epitaxy of GaN on Si to use an AlN buffer layer for growing high-quality two-dimensional layers, despite its high resistivity. Herein, we report a metal-based pre-orienting layer (POL) for growing GaN nanostructures (NSs) to replace the traditional AlN buffer layer. Two metals, titanium (Ti) and hafnium (Hf), were evaluated as POLs. We succeeded in fabricating arrays of GaN NSs with highly preferred orientation using selective-area growth. The crystallographic phase of the POLs critically affected the evolved orientation of the crystals. Photoluminescence measurements revealed that GaN NSs with Hf-based POLs were of reasonably high quality. We believe that this result will facilitate broader III-V semiconductor applications using alternative substrates moving beyond conventional Si-based optoelectronics.

    DOI: 10.1016/j.jcrysgro.2016.10.032

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  81. Annealing effect on threading dislocations in a GaN grown on Si substrate International journal

    H. Iwata, H. Kobayashi, T. Kamiya, R. Kamei, H. Saka, N. Sawaki, M. Irie, Y. Honda, H. Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 835 - 838   2017.6

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    Effect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a (111) Si substrate was investigated by photoluminescence (PL) and transmission electron microscopy (TEM) analyses. The PL spectra suggested that the density of gallium vacancy is not changed by the heat treatment up to 700 degrees C. In the TEM specimen, we had dislocation half loops generated by off-axis propagation of the threading dislocation. We found that the half-loop of c-type dislocation shrinks/moves by a repetitive RTA at 600-700 degrees C. In contrast, we could find no remarkable changes in the a-type or a+c-type dislocations.

    DOI: 10.1016/j.jcrysgro.2017.01.001

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  82. III-nitride core-shell nanorod array on quartz substrates

    Bae Si-Young, Min Jung-Wook, Hwang Hyeong-Yong, Lekhal Kaddour, Lee Ho-Jun, Jho Young-Dahl, Lee Dong-Seon, Lee Yong-Tak, Ikarashi Nobuyuki, Honda Yoshio, Amano Hiroshi

    SCIENTIFIC REPORTS   Vol. 7   2017.3

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    DOI: 10.1038/srep45345

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  83. AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method International journal

    Hunsoo Jeon, Injun Jeon, Gang Seok Lee, Sung Geun Bae, Hyung Soo Ahn, Min Yang, Sam Nyung Yi, Young Moon Yu, Yoshio Honda, Nobuhiko Sawaki, Suck-Whan Kim

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

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    High Al-composition AlGaN and AlN epilayers were grown directly on Si(111) substrate by a hydride vapor phase epitaxy (HVPE) method with a melted mixed source in a graphite boat set in a source zone with high temperatures of T = 700 and 800 degrees C, respectively. The presence of the Ga material in the mixed source of Ga and Al promoted the growth of AlN and AlGaN epilayers in the growth zone. When the temperature in the source zone was 800 degrees C, the crystalline quality of the AlN and AlGaN epilayers increased as the ratio of Ga to Al increased, and the optimum mix ratio of Ga to Al for the growth of AlN epilayers was approximately 0.35-0.42, obtained from a numerical fitting analysis of the X-ray diffraction (XRD) data for these epilayers. It appears that they can be grown directly by our melted-mixed-source HVPE method in a high-temperature source zone. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.56.01AD07

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  84. Mechanism of light emission and manufacturing process of vertical-type light-emitting diode grown by hydride vapor phase epitaxy International journal

    Gang Seok Lee, Hunsoo Jeon, Hyung Soo Ahn, Min Yang, Sam Nyung Yi, Young Moon Yu, Sang Chil Lee, Yoshio Honda, Nobuhiko Sawaki, Suck-Whan Kim

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

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    We developed a vertical-type light-emitting diode (LED) in which the substrate is removed using a hydride vapor phase epitaxy (HVPE) apparatus consisting of a multi-graphite boat filled with a mixed source and a high-temperature (T approximate to 900 degrees C) RF heating coil outside the source zone. The new chip-growth process with a significant reduction in the number of production steps is completed in only four steps, namely, photolithography, epitaxial layer growth, sorting, and metallization. We analyze the emission mechanism of these lights from measurement results to validate the characteristics of the light emitted from these vertical-type blue LEDs and white LEDs (WLEDs) without substrates, and propose that this mixed-source HVPE method may be a promising production technique for LEDs. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.56.01AD03

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  85. Development of Sustainable Smart Society based on Transformative Electronics

    Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     page: .   2017

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  86. Development of Sustainable Smart Society based on Transformative Electronics

    Ogura M, Ando Y, Usami S, Nagamatsu K, Kushimoto M, Deki M, Tanaka A, Nitta S, Honda Y, Pristovsek M, Kawai H, Yagi S, Amano H

    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     page: .   2017

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  87. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode International journal

    Byung Oh Jung, Si-Young Bae, Seunga Lee, Sang Yun Kim, Jeong Yong Lee, Yoshio Honda, Hiroshi Amano

    NANOSCALE RESEARCH LETTERS   Vol. 11 ( 1 ) page: 215   2016.12

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    We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.

    DOI: 10.1186/s11671-016-1441-6

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    PubMed

  88. Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer International journal

    Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Tadashi Mitsunari, Akira Tamura, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 454   page: 114 - 120   2016.11

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    The planar epitaxial growth of semipolar (10 (1) over bar3) GaN on a Si(001) substrate was performed on a directionally sputtered AlN buffer layer. Three types of interlayers, i.e., single AlN, double AlN, and a stack of AlN/GaN layers were grown by metalorganic chemical vapor deposition (MOCVD) to achieve high quality GaN films. The results for the stack of AlN/GaN layers provide highest crystal quality and optical properties for GaN. Comparing the top (Ga face) and bottom (N face) surfaces of grown semipolar (10 (1) over bar3) GaN confirms the defect density reduction that is due to the application of interlayers. Moreover, reduced inversion domain density on the bottom surface is attributed with the insertion of interlayers. Improving the quality of semipolar GaN on Si(001) substrates is expected to be useful for GaN/Si(001) integrated optoelectronics. (C) 2016 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2016.09.004

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  89. Controlled morphology of regular GaN microrod arrays by a selective area growth with HVPE International journal

    Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 447   page: 55 - 61   2016.8

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    The selective area growth (SAG) of GaN was implemented on patterned GaN/sapphire templates by hydride vapor phase epitaxy (HVPE) to fabricate regular arrays of Ga-polar GaN microrods. The control of growth parameters such as H-2/N-2 carrier gas ratio, growth temperature, and absolute NH3/HCl gas flow resulted in changes in the growth morphology. In particular, for an optimized mixed-carrier gas ratio of H-2 to N-2, we achieved vertically well-aligned microrods. The topmost regions of the GaN microrods were terminated with pyramidal facets, indicating typical Ga polarity. The optical properties of the grown microrods were characterized by cathodoluminescence (CL) at a low temperature. This revealed that the GaN microrods had high crystal quality since they exhibited suppressed yellow luminescence as well as strong band edge emission. (C) 2016 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2016.05.008

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  90. Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study International journal

    Shoko Nagai, Kiho Yamada, Akira Hirano, Masamichi Ippommatsu, Masahiro Ito, Naoki Morishima, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 8 )   2016.8

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    To replace mercury lamps with AlGaN-based deep-ultraviolet (DUV) LEDs, a simple and low-cost package with increased light extraction efficiency (LEE) is indispensable. Therefore, resin encapsulation is considered to be a key technology. However, the photochemical reactions induced by DUV light cause serious problems, and conventional resins cannot be used. In the former part of this study, a comparison of a silicone resin and fluorine polymers was carried out in terms of their suitability for encapsulation, and we concluded that only one of the fluorine polymers can be used for encapsulation. In the latter part, the endurance of encapsulation using the selected fluorine polymer was investigated, and we confirmed that the selected fluorine polymer can guarantee a lifetime of over 6,000 h at a wavelength of 265nm. Furthermore, a 3 x 4 array module of encapsulated dies on a simple AlN submount was fabricated, demonstrating the possibility of W/cm(2)-class lighting. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.082101

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  91. Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering International journal

    Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Tadashi Mitsunari, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    Using an in situ laser absorption and scattering method, the surface roughness and incorporation of In in InGaN layers grown by metal organic vapor-phase epitaxy (MOVPE) were monitored. We observed that the laser light with energy higher than the GaN bandgap was fully absorbed in a GaN layer with a smooth film surface. On the other hand, we observed that the scattering laser light from the surface when the roughness of the InGaN surface increased owing to the formation of In droplets. Laser light with energy lower than the GaN bandgap was weakly absorbed by the GaN layer and was scattered at the back surface of the wafer. Furthermore, laser light intensity decreased during InGaN growth because of In incorporation. The threshold of trimethyl-In (TMIn) for the formation of In droplets as a function of growth temperature was determined using our in situ system. Moreover, we observed that the In droplets were removed by thermal or H-2 treatment. The results indicate that multiwavelength laser absorption and scattering enable the optimization of the growth conditions for In-rich InGaN. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FD03

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  92. Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy

    Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    We investigated the surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy using an ab initio-based approach. We observed that the reconstructed structure changes from In-rich surfaces such as In bilayer and monolayer surfaces to an ideal surface with increasing growth temperature. In addition, we investigated the effects of surface reconstruction on the growth process using a newly improved thermodynamic analysis method. Although no barrier is present in the growth reaction when the In-rich surfaces appear, the results suggest that the surface phase acts as a barrier in the growth reaction when the ideal surface appears. Furthermore, we discuss the growth conditions that enable high-temperature growth with a smooth reaction path. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FM01

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  93. Study of radiation detection properties of GaN pn diode

    Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, Takayuki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    Recently, GaN, which has remarkable properties as a material for optical devices and high-power electron devices, has also attracted attention as a material for radiation detectors. We previously suggested the use of BGaN as a neutron detector material. However, the radiation detection characteristics of GaN itself are not yet adequately understood. For realizing a BGaN neutron detector, the understanding of the radiation detection characteristics of GaN, which is a base material of the neutron detector, is important. In this study, we evaluated the radiation detection characteristics of GaN. We performed I-V and energy spectrum measurements under alpha ray, gamma ray, and thermal neutron irradiations to characterize the radiation detection characteristics of a GaN diode. The obtained results indicate that GaN is an effective material for our proposed new BGaN-based neutron detector. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FJ02

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  94. Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum International journal

    Si-Young Bae, Byung Oh Jung, Kaddour Lekhal, Dong-Seon Lee, Manato Deki, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    We report on the material and optical properties of core-shell InGaN layers grown on GaN nanorod arrays. The core-shell InGaN layers were well grown on polarization-reduced surfaces such as semipolar pyramids and nonpolar sidewalls. In addition, to compensate the biaxial strain between GaN and InGaN layers, we grew interlayers underneath a thick InGaN layer. Here, the interlayers were composed of multiple superlattice structures. We could observe that the indium composition of core-shell InGaN structures increased with the number of interlayers. This indicates that the absorption energy band of InGaN alloys can be better matched to the spectral irradiance of the solar spectrum in nature. We also implemented a simulation of Ga-polar and nonpolar InGaN-based solar cells based on the indium composition obtained from the experiments. The result showed that nonpolar InGaN solar cells had a much higher efficiency than Ga-polar InGaN solar cells with the same thickness of the absorption layer. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FG03

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  95. Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy International journal

    Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    In this paper, we discuss the influence of parameters such as type of carrier gas and NH3/HCl flow ratio on the growth of vertical GaN microstructures by selective-area growth (SAG) hydride vapor phase epitaxy (HVPE). On various strain-induced templates such as GaN/sapphire, GaN/Si, and AlN/Si, regular arrays of Ga-polar GaN microrods were properly achieved by adjusting the growth parameters. The photoluminescence and micro-Raman measurements reveal not only the crystal quality of the GaN microrods but also strain distribution. These results will give insight into the control of the morphology of GaN microrods in terms of the strain induced from templates in SAG-HVPE. The precisely controlled arrays of GaN microrods can be used for next-generation light-emitting diodes (LEDs) by realizing InGaN/GaN multi-quantum wells (MQWs) with a radial structure. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FF03

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  96. Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer International journal

    Zheng Sun, Kentaro Nagamatsu, Marc Olsson, Peifeng Song, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    Previously, we reported a growth method for GaN on SiC by metalorganic vapor phase epitaxy. By using a preflow trimethylaluminum treatment, the poor wetting problem of gallium on the SiC surface was alleviated, resulting in a 1.2-mu m-thick crack-free GaN grown on an on-axis 6H-SiC(0001) substrate via an ultrathin AlGaN interlayer. In this study, the impact of the preflow trimethylaluminum treatment time is investigated to understand why a crack-free epilayer was realized. To demonstrate the electrical performance of devices formed by our technique, GaN/SiC vertical Schottky barrier diodes were fabricated and compared with GaN/AlN/SiC and GaN/GaN vertical Schottky barrier diodes. Compared with diodes including a high-resistance AlN interlayer, the series resistance of GaN/SiC Schottky barrier diodes incorporating the ultrathin interlayer with 5 s of TMAl treatment showed a marked reduction from 4.0 x 10(7) to 2.0 x 10(-1) Omega.cm(2). The ultrathin interlayer growth technique is expected to be applied in future GaN/SiC hybrid high-power and high-frequency devices. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FB06

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  97. Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity International journal

    Daiki Sato, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    A thin p-type InGaN with a negative electron affinity (NEA) surface was used to measure the relaxation time of a surface charge limit (SCL) by irradiating rectangular laser beam pulses at changing time interval. The p-type InGaN film was grown by metal organic vapor phase epitaxy and the NEA activation was performed after the sample was heat cleaned. 13 nC per pulse with 10ms width was obtained from the InGaN photocathode. The current decreased exponentially from the beginning of the pulse. The initial current value after the laser irradiation decreased with the time interval. As a result, the SCL relaxation time was estimated through the InGaN photocathode measurements at 100 ms. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FH05

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  98. Growth of semipolar (1(1)over-bar01) high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001) International journal

    Maki Kushimoto, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    Low-toxity high-In-content InGaN is an attractive option for short-distance communications through plastic optical fibers because its performance is only slightly affected by temperature. However, its fabrication on the c-plane is impaired by In droplets and V pits, which form at low-growth temperature. On the other hand, unlike the c-plane, (1 (1) over bar 01) InGaN relaxes with tilting. Therefore, in this study, we first grew a high-In-content InGaN single layer, and then we fabricated an InGaN tilting layer between (1 (1) over bar 01) InGaN-based multiple quantum wells (MQWs) and GaN stripes/(001) Si. The emission wavelength increased with the InGaN tilting layer's growth time because the strain was relaxed by misfit dislocations at the heterointerface. This layer also extended the emission peak of InGaN/GaN MQWs and increased the photoluminescence intensity with respect to that of a single-layered InGaN. Therefore, the InGaN tilting layer is effective for growing high-In-content (1 (1) over bar 01) InGaN MQWs. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FA10

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  99. Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy International journal

    Gang Seok Lee, Chanmi Lee, Hunsoo Jeon, Chanbin Lee, Sung Geun Bae, Hyung Soo Ahn, Min Yang, Sam Nyung Yi, Young Moon Yu, Jae Hak Lee, Yoshio Honda, Nobuhiko Sawaki, Suck-Whan Kim

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 5 )   2016.5

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    Even though a patterned sapphire substrate (PSS) has been used for the growth of a high-quality epilayer because of its many advantages, it has not been successfully used to grow an AlN epilayer for ultraviolet (UV) light-emitting diodes (LEDs) on a PSS up to now. We report the growth of a high-quality AlN epilayer on a PSS, as a substrate for the manufacture of UV LEDs, by hydride vapor phase epitaxy (HVPE). The X-ray diffraction (XRD) peaks for the AlN epilayer grown on the PSS indicate that crystalline AlN with a wurtzite structure was grown successfully on the PSS. Furthermore, HVPE combining both in situ HVPE technology and liquid-phase epitaxy (LPE) using a mixed source is proposed as a novel method for the growth of a flat AlN epilayer on a PSS. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.05FC02

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  100. Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations

    Seunga Lee, Yoshio Honda, Hiroshi Amano, Jongjin Jang, Okhyun Nam

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 3 )   2016.3

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    Using a SiNx insertion layer to reduce dislocations, enhanced photovoltaic properties could be obtained in p-i-n InGaN/GaN heterojunction solar cell. To investigate the influence of the dislocations on the photovoltaic behaviors, a sample grown without SiNx insertion layer was identically prepared for comparison. From optical properties measurements, the reduction in the number of non-radiative centers and a stronger In localization effect was shown in the sample with SiNx insertion layer. However, the quantum confined stark effect was almost negligible in both the samples. Electrical properties measurement showed reduced saturation current and increased shunt resistance in the sample with SiNx insertion layer due to the reduced dislocation density. By comparing these results and using a numerical model, the influence of the dislocation density on the different photovoltaic properties such as open-circuit voltage and fill factor has been confirmed. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.030306

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  101. Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells International journal

    Seunga Lee, Yoshio Honda, Hiroshi Amano

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 49 ( 2 )   2016.1

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    To understand the effect of piezoelectric fields on carrier dynamics, we numerically investigated a simple p-GaN/i-InxGa1-xN/n-GaN solar cell structure. A reliable simulation model was obtained by comparing the experimental and simulated results in advance. The same p-i-n InGaN structures were re-simulated with and without the piezoelectric field effect, as spontaneous polarization remained unchanged. The sample with the piezoelectric field effect showed higher short current density (J(sc)), a staircase-like feature in its I-V curve, and higher open circuit voltage (V-oc) with a lower fill factor (F.F.) and reduced conversion efficiency (C.E.) than the sample with no piezoelectric fields. In addition, with increasing In fraction (x), the V-oc value gradually increased while the J(sc) value significantly decreased, correspondingly leading to a reduction in C.E. and F.F. values of the structure with the piezoelectric field effect. To solve the current loss problem, we applied various piezoelectric field elimination techniques to the simulated structures.

    DOI: 10.1088/0022-3727/49/2/025103

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  102. The interface analysis of GaN grown on 0 degrees off 6H-SiC with an ultra-thin buffer layer

    Zheng Sun, Akio Ohta, Seiichi Miyazaki, Kentaro Nagamatsu, Hojun Lee, Marc Olsson, Zheng Ye, Manato Deki, Yoshio Honda, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 1 )   2016.1

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    Previously, we reported a growth method by metalorganic vapor phase epitaxy using a single two- dimensional growth step, resulting in 1.2-mu m crack-free GaN directly grown on 6H-SiC substrate. The introduction of Al-treatment prior to the standard GaN growth step resulted in improved surface wetting of gallium on the SiC substrate. Transmission electron microscope and energy dispersive spectrometer analysis of the epitaxial interface to the SiC determined that an ultra-thin AlGaN interlayer had formed measuring around 2-3 nm. We expect our growth technique can be applied to the fabrication of GaN/SiC high frequency and high power devices. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.010303

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  103. Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition International journal

    Si-Young Bae, Byung Oh Jung, Kaddour Lekhal, Sang Yun Kim, Jeong Yong Lee, Dong-Seon Lee, Manato Deki, Yoshio Honda, Hiroshi Amano

    CRYSTENGCOMM   Vol. 18 ( 9 ) page: 1505 - 1514   2016

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    To extend the availability of nanostructure-based optoelectronic applications, vertically elongated nanorods with precisely controlled morphology are required. For group III nitrides, pulsed-mode growth has recently been reported as an effective method for growing nanorod arrays with geometric precision. Here, we demonstrated the growth of arrays of highly elongated nanorods on Si substrates by metal-organic chemical vapor deposition using a pulsed-mode approach. Unlike the thick and high (or middle)-quality GaN templates normally used, nanorod growth was performed on an ultrathin and low-quality AlN/Si platform. Using kinetically controlled growth conditions and a patterning process, exceptionally long GaN nanorods were achieved with high geometric precision. The grown nanorods showed considerably improved optical and structural properties while remaining in uniform arrays. This approach can be used with a variety of materials to obtain nanorods with high quality, high uniformity, and high aspect ratio, and it can also serve as an effective fabrication method for InAlGaN-alloyed core/shell nanostructures for optoelectronic nano-devices with ultrahigh efficiency.

    DOI: 10.1039/c5ce02056e

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  104. Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications International journal

    Akira Hirano, Yosuke Nagasawa, Masamichi Iypommatsu, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki

    UV and Higher Energy Photonics: From Materials to Applications   Vol. 9926   2016

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    AlGaN-based LEDs are expected to be useful for sterilization, deodorization, photochemical applications such as UV curing and UV printing, medical applications such as phototherapy, and sensing. Today, it has become clear that efficient AlGaN-based LED dies are producible between 355 and 250 nm with an external quantum efficiency (EQE) of 3% on flat sapphire. These dies were realized on flat sapphire without using a special technique, i.e., reduction in threading dislocation density or light extraction enhancement techniques such as the use of a photonic crystal or a patterned sapphire substrate. Despite the limited light extraction efficiency of about 8% owing to light absorption at a thick p-GaN contact layer, high EQEs of approximately 6% has been reproducible between 300 and 280 nm without using special techniques. Moreover, an EQE of 3.9% has been shown at 271 nm, despite the smaller current injection efficiency (CIE). The high EQEs are thought to correspond to the high internal quantum efficiency (IQE), indicating a small room for improving IQE. Accordingly, resin encapsulation on a simple submount is strongly desired. Recently, we have succeeded in demonstrating fluorine resin encapsulation on a ceramic sheet (chip-on-board, COB) that is mass-producible. Furthermore, the molecular structure of a resin with a durability of more than 10,000 h is explained in this paper from the photochemical viewpoint. Thus, the key technologies of AlGaN-based DUV-LEDs having an EQE of 10% within a reasonable production cost have been established. The achieved efficiency makes AlGaN-based DUV-LEDs comparable to high-pressure mercury lamps.

    DOI: 10.1117/12.2235398

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  105. Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells International journal

    Hideaki Murotani, Yoichi Yamada, Yoshio Honda, Hiroshi Amano

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 252 ( 5 ) page: 940 - 945   2015.5

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    The optical properties of InGaN/GaN multiple quantum wells (MQWs) have been studied by means of photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy. The radiative and nonradiative recombination lifetimes were evaluated as a function of the excitation energy density. The radiative recombination lifetime decreased and subsequently reached a nearly constant value with increasing excitation energy density, which was attributed to screening of internal electric fields by photoexcited carriers. On the other hand, the nonradiative recombination lifetime increased and subsequently decreased with increasing excitation energy density. The initial increase in the nonradiative recombination lifetime could be attributed to saturation of nonradiative recombination centers with photoexcited carriers. The nonradiative recombination lifetime was found to decrease to a considerably weaker extent than that expected for the Auger recombination process of free carriers. This indicated that the decrease in the internal quantum efficiency (IQE) at high carrier densities could not be explained only by the Auger recombination process of free carriers. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssb.201451491

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  106. Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates

    Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

    Applied Physics Express   Vol. 8 ( 2 ) page: 022702   2015.2

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  107. Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates

    Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

    Applied Physics Express   Vol. 8 ( 2 ) page: 022702   2015.2

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  108. Optically pumped lasing properties of (1(1)over-bar01) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates International journal

    Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

    APPLIED PHYSICS EXPRESS   Vol. 8 ( 2 )   2015.2

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    We demonstrated lasing action and investigated the optical properties of (1 (1) over bar 01) multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating (1 (1) over bar 01) InGaN MQW laser diodes on (001) Si. (C) 2015 The Japan Society of Applied Physics

    DOI: 10.7567/APEX.8.022702

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  109. Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region International journal

    Byung Oh Jung, Si-Young Bae, Sang Yun Kim, Seunga Lee, Jeong Yong Lee, Dong-Seon Lee, Yoshihiro Kato, Yoshio Honda, Hiroshi Amano

    NANO ENERGY   Vol. 11   page: 294 - 303   2015.1

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    Highly ordered, position-controlled gallium nitride (GaN) nanowire based multiple-quantum-wells (MQWs) core-shell architecture arrays are synthesized by metalorganic chemical vapor deposition (MOCVD). We investigate the possibility of using GaN nanowire arrays as a basal template for the growth of InxGa1-xN/GaN MQWs. The MQWs on three different crystal facets (c(-), m(-), and semipolar-plane) of GaN nanowire exhibit dissimilar structural properties. The structural characteristics of InGaN/GaN core-shell arrays are inspected by cross-sectional high-resolution transmission electron microscopy (HR-TEM). We also investigate the optical properties of MQW core-shell structure nanoarrays. The luminescent characteristics of InGaN/GaN core-shell structure arrays are determined by photoluminescence (PL) and cathodoluminescence (CL) measurements. The monochromatic CL images clearly show the light emission behavior of InGaN/GaN MQW coaxial structure. Two distinguishable light emission peaks were observed in the GaN nanowire based core-shell structure. The characteristic of light emission mainly depends on the properties of MQWs, which are generated from different crystal facets of GaN. In addition, the light emission intensity shows different behaviors depending on the area of the GaN nanowire m-plane. The results of this study suggest that GaN nanowire arrays can be used as a good alternative basal template for next-generation light-emitting diodes (LEDs). (C) 2014 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.nanoen.2014.11.003

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  110. Nature of yellow luminescence band in GaN grown on Si substrate International journal

    Shogo Ito, Taihei Nakagita, Nobuhiko Sawaki, Hyung Soo Ahn, Masashi Irie, Toshiki Hikosaka, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 53 ( 11 )   2014.11

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    High-optical-quality GaN was grown on a (111) Si substrate by metal-organic vapor phase epitaxy using an AlInN buffer layer and an indium doped AlN nucleation layer. The photoluminescence spectra at room temperature showed a strong and narrow edge-emission peak and weak defect-related emission bands. We found four spectral peaks in the green and yellow luminescence bands at G(0): 514.5 nm (2.410 eV), G(1): 546.5nm (2.269 eV), Y-1: 553.5nm (2.240 eV), and Y-0: 584.5nm (2.121 eV), independent of the growth methods/conditions. The results suggest that the emission is associated with an intrinsic defect such as a Ga vacancy. (C) 2014 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.53.11RC02

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  111. Quantum Efficiency and Life Time of GaN and InGaN with NEA-surface International journal

    Sato Daiki, Nishitani Tomohiro, Maekawa Takuya, Honda Yoshio, Amano Hiroshi

    IEICE technical report. Component parts and materials   Vol. 114 ( 202 ) page: 49 - 54   2014.9

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    The photocathode using Negative Electron Affinity (NBA) surface on a semiconductor has been applied for science technologies such as an elemental particle experiment as an electron beam source. Yet, since NBA-surface is fragile, it is necessary to figure out how to make its life time longer in order to develop new technologies. Then, we realized that considering the band gap in semiconductor, the life time becomes longer as the negative affinity goes even smaller. Therefore, we produced the photocathodes using GaN and InGaN that have wider band gaps than that of GaAs. As a result, using GaN and InGaN, we gained 17 times and 7 times longer life time NEA-surface than that of GaAs, respectively. On the other hand, the result indicates that we can produce the NEA-surface with only cesium.

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  112. P-GaN by Mg Ion Implantation for Power Device Applications (シリコン材料・デバイス) International journal

    SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   Vol. 114 ( 58 ) page: 109-112 - 112   2014.5

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    We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique and high temperature implantation, ion implantation damage was greatly reduced. This soft implantation made the post anneal more effectively to recover the implantation damage and activate the implanted Mg ions. We believe this p-GaN by Mg ion implantation will contribute to GaN to enter high output power device application field.

    CiNii Article

  113. Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask International journal

    Ji-Su Son, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 53 ( 5 )   2014.5

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    The characteristics of nonpolar a-plane (11 (2) over bar0) GaN (a-GaN) grown using single and double nanopillar SiO2 masks were investigated. The two nanopillar SiO2 masks were directly fabricated on an r-plane sapphire substrate and a-GaN by the epitaxial lateral overgrowth (ELOG) technique. Through the use of the single and double nanopillar SiO2 masks, the crystalline quality and optical properties of a-GaN were markedly improved because of the nanoscale ELOG effect and a number of voids in the single and double nanopillar SiO2 mask areas in comparison with the planar sample. The submicron pit densities of the planar, single, and double nanopillar mask samples were similar to 2 x 10(9), similar to 7 x 10(8), and similar to 4 x 10(8) cm(-2), respectively. The internal quantum efficiency (IQE) values at room temperature of three-period InGaN/GaN multiple quantum wells (MQWs) grown using the planar, single, and double nanopillar masks were 45, 60, and 68% at a carrier concentration of 1.0 x 10(18) cm(-3), respectively. (C) 2014 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.53.05FL01

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  114. Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays International journal

    Cao Miao, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 53 ( 3 )   2014.3

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    Regularly distributed nanopyramid arrays with a highly uniform size were grown by selective-area growth. The nanopyramid size could be tuned by varying the growth time. Two emission peaks were observed from multiple quantum wells grown on the nanopyramids. The longer-wavelength peak originated from the apexes of pyramids with threefold symmetry. High-density stacking faults observed at these triangular apexes might be responsible for the higher indium incorporation. The formation of embedded voids inside the pyramids was explained by the different growth rates at the edge and center of the mask window caused by the low diffusion length. (C) 2014 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.53.030306

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  115. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy International journal

    Guangxu Ju, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, Hiroshi Amano

    JOURNAL OF APPLIED PHYSICS   Vol. 115 ( 9 )   2014.3

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    The effects of GaN quantum barriers with changing growth temperatures on the interfacial characteristics of GaN/InGaN single quantum well (SQW) grown on GaN templates by metalorganic vapour phase epitaxy were in situ investigated by X-ray crystal truncation rod (CTR) scattering and X-ray reflectivity measurements at growth temperature using a laboratory level X-ray diffractometer. Comparing the curve-fitting results of X-ray CTR scattering spectra obtained at growth temperature with that at room temperature, the InxGa1-xN with indium composition less than 0.11 was stabile of the indium distribution at the interface during the whole growth processes. By using several monolayers thickness GaN capping layer to protect the InGaN well layer within temperature-ramping process, the interfacial structure of the GaN/InGaN SQW was drastically improved on the basis of the curve-fitting results of X-ray CTR scattering spectra, and the narrow full width at half-maximum and strong luminous intensity were observed in room temperature photoluminescence spectra. (C) 2014 AIP Publishing LLC.

    DOI: 10.1063/1.4867640

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  116. Novel activation process for Mg-implanted GaN International journal

    Shin Hashimoto, Takao Nakamura, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 388   page: 112 - 115   2014.2

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    A novel activation process for Mg-implanted GaN was demonstrated. As opposed to the conventional thermal annealing process, an H-2/NH3 alternating supply annealing process achieved better optical activation, stronger near-ullraviolel luminescence and weaker yellow luminescence in the phololuminescence spectroscopy. After this process, small hexagonal hillocks were observed on the surface, which indicated that crystal regrowth was induced by this process, consisting of decomposition of GaN by H-2 supplies and re-crystallization by NH3 supplies. It was revealed that the implanted Mg could easily be located at the activation site by means of crystal regrowth by this process. (C) 2013 Elsevier B.V. All rights reserved

    DOI: 10.1016/j.jcrysgro.2013.07.011

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  117. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching International journal

    Ji-Su Son, Yoshio Honda, Hiroshi Amano

    OPTICS EXPRESS   Vol. 22 ( 3 ) page: 3585 - 3592   2014.2

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:OPTICAL SOC AMER  

    Nonpolar a-plane (11-20) GaN (a-GaN) layers with low overall defect density and high crystalline quality were grown on r-plane sapphire substrates using etched a-GaN. The a-GaN layer was etched by pulse NH3 interrupted etching. Subsequently, a 2-mu m-thick Si-doped a-GaN layer was regrown on the etched a-GaN layer. A fully coalescent n-type a-GaN layer with a low threading dislocation density (similar to 7.5 x 10(8) cm(-2)) and a low basal stacking fault density (similar to 1.8 x 10(5) cm(-1)) was obtained. Compared with a planar sample, the full width at half maximum of the (11-20) X-ray rocking curve was significantly decreased to 518 arcsec along the c-axis direction and 562 arcsec along the m-axis direction. (C) 2014 Optical Society of America

    DOI: 10.1364/OE.22.003585

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    PubMed

  118. Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate

    Yamashita, Kouhei; Sugiyama, Tomohiko; Iwai, Makoto; Honda, Yoshio; Yoshino, Takashi; Amano, Hiroshi;

    SPIE OPTO     page: 90030E-90030E-6   2014

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  119. Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask

    Son, Ji-Su; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 53 ( 5S1 ) page: 05FL01   2014

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  120. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH< sub> 3</sub> interrupted etching

    Son, Ji-Su; Honda, Yoshio; Amano, Hiroshi;

    Optics express   Vol. 22 ( 3 ) page: 3585-3592   2014

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  121. Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    physica status solidi (c)   Vol. 11 ( 3‐4 ) page: 722-725   2014

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  122. Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays

    Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 53 ( 3 ) page: 30306   2014

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  123. Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique

    Jung, Byung Oh; Bae, Si-Young; Kato, Yoshihiro; Imura, Masataka; Lee, Dong-Seon; Honda, Yoshio; Amano, Hiroshi;

    CrystEngComm   Vol. 16 ( 11 ) page: 2273-2282   2014

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  124. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

    Ju, Guangxu; Kato, Yoshihiro; Honda, Yoshio; Tabuchi, Masao; Takeda, Yoshikazu; Amano, Hiroshi;

    physica status solidi (c)   Vol. 11 ( 3‐4 ) page: 393-396   2014

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  125. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy

    Ju, Guangxu; Honda, Yoshio; Tabuchi, Masao; Takeda, Yoshikazu; Amano, Hiroshi;

    Journal of Applied Physics   Vol. 115 ( 9 ) page: 94906   2014

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  126. Novel activation process for Mg-implanted GaN

    Hashimoto, Shin; Nakamura, Takao; Honda, Yoshio; Amano, Hiroshi;

    Journal of Crystal Growth   Vol. 388   page: 112-115   2014

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  127. Recombination dynamics and internal quantum efficiency in InGaN nanowires

    Murotani Hideaki, Andoh Hiroya, Tsukamoto Takehiko, Sugiura Toko, Yamada Yoichi, Tabata Takuya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4   Vol. 11 ( 3-4 ) page: 652-655   2014

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    DOI: 10.1002/pssc.201300437

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  128. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy

    Ju Guangxu, Kato Yoshihiro, Honda Yoshio, Tabuchi Masao, Takeda Yoshikazu, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4   Vol. 11 ( 3-4 ) page: 393-396   2014

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    DOI: 10.1002/pssc.201300670

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  129. Enhancement of light output power on GaN-based light-emitting diodes using two-direction stripe-patterned sapphire substrate International journal

    Koji Okuno, Takahide Oshio, Naoki Shibata, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4   Vol. 11 ( 3-4 ) page: 722 - 725   2014

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:WILEY-V C H VERLAG GMBH  

    To achieve both the reduction of threading dislocation density (TDD) and the enhancement of light extraction efficiency (LEE) of light-emitting diodes (LEDs), a two-directional stripe-patterned sapphire substrate (TPSS) was fabricated. First, a stripe pattern parallel to the a-axis of Al2O3 was formed on an as-received c-sapphire wafer and then a second stripe pattern rotated around 3 degrees from the m-axis of Al2O3 was formed on the first stripe PSS. The light output power of TPSS LEDs was around 1.25 times higher than that of LEDs on a flat sapphire substrate. This enhancement is caused by the increase of both the internal quantum efficiency (IQE) and the LEE. On the other hand, although the LED on TPSS with the second stripe just parallel to the m-axis of Al2O3 showed a similar enhancement ratio of the light output power, the current leakage of this LED increased with the concentration of threading dislocations on the surface of LEDs. Stripes rotated 3 degrees from the m-axis of Al2O3 changed the growth mode and realized GaN films with a smooth surface without pit formation. Therefore, the misalignment of the stripe from the m-axis of Al2O3 will become a new design parameter for realizing high-efficiency reliable LEDs. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssc.201300470

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  130. Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate International journal

    Kouhei Yamashita, Tomohiko Sugiyama, Makoto Iwai, Yoshio Honda, Takashi Yoshino, Hiroshi Amano

    LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVIII   Vol. 9003   2014

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    A GaN layer of 20 mu m thickness grown by the liquid-phase epitaxy on c-plane sapphire was used as a template for the growth of blue light-emitting diodes (LEDs) with emission peak wavelengths of about 450 nm. As the underlying layer of the active region, an InGaN/GaN superlattice or two pairs of 100 nm undoped GaN and 20 nm GaN: Si layers on an n-type GaN: Si layer was found to be effective for reducing the forward voltage. By optimizing the multiple-quantumwell structure, LEDs having a 2.5-nm-thick InGaN well and 5-nm-thick GaN barrier exhibited the highest internal quantum efficiency (IQE) at both low and high currents. This IQE was much higher than that of LEDs on a sapphire substrate. The IQE of LEDs using the liquid-phase GaN grown on sapphire substrate exceeded more than 75% at a forward current density of over 200 A/cm(2).

    DOI: 10.1117/12.2038764

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  131. Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique International journal

    Byung Oh Jung, Si-Young Bae, Yoshihiro Kato, Masataka Imura, Dong-Seon Lee, Yoshio Honda, Hiroshi Amano

    CRYSTENGCOMM   Vol. 16 ( 11 ) page: 2273 - 2282   2014

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:ROYAL SOC CHEMISTRY  

    In this paper, we demonstrate a scalable process for the precise position-controlled selective growth of GaN nanowire arrays by metalorganic chemical vapor deposition (MOCVD) using a pulsed-mode growth technique. The location, orientation, length, and diameter of each GaN nanowire are controlled via pulsed-mode growth parameters such as growth temperature and precursor injection and interruption durations. The diameter and length of each GaN nanowire are in the ranges of more than 240 nm and 250-1250 nm, respectively, with different vertical-to-lateral aspect ratios that depend on the growth temperature. Also, it is found that a higher growth temperature helps increase the vertical growth rate and reduces the lateral growth rate of GaN nanowire arrays. Furthermore, in the case of longer TMGa injection duration, the Ga-rich region allows the higher lateral growth rate of GaN nanostructures, which leads to a transition in the morphology from nanowires to a thin film, while in the case of longer NH3 injection duration, the surface morphology changes from nanowires to pyramidal structures. In addition, the surface structure can also be controlled by varying the precursor interruption duration. Finally, we report and discuss a growth model for GaN nanowire arrays under pulsed-mode MOCVD growth.

    DOI: 10.1039/c3ce42266f

    Web of Science

  132. Study on C doping in GaN and AlGaN by MOVPE

    WAKASUGI Yuya, HONDA Yoshio, AMANO Hiroshi

    Technical report of IEICE. LQE   Vol. 113 ( 331 ) page: 47 - 50   2013.11

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    We grew Mg/C co-doped GaN and AlGaN by MOVPE for identifying the C level in GaN and AlGaN. We measured electrical and optical properties by Hall effect measurement and cathodeluminescence (CL) measurement. Hole concentration in GaN increased with increase of C concentration at low C doping level, although that in AlGaN decreased with increase of C_2H_2 flow rate. All the samples show similar CL with peak wavelength of about 440nm. We also grew Mg/C delta co-doped GaN. Delta doping is found to be effective for realizing higher hole concentration than the conventional one.

    CiNii Article

  133. Study on C doping in GaN and AlGaN by MOVPE

    WAKASUGI Yuya, HONDA Yoshio, AMANO Hiroshi

    IEICE technical report. Component parts and materials   Vol. 113 ( 330 ) page: 47 - 50   2013.11

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We grew Mg/C co-doped GaN and AlGaN by MOVPE for identifying the C level in GaN and AlGaN. We measured electrical and optical properties by Hall effect measurement and cathodeluminescence (CL) measurement. Hole concentration in GaN increased with increase of C concentration at low C doping level, although that in AlGaN decreased with increase of C_2H_2 flow rate. All the samples show similar CL with peak wavelength of about 440nm. We also grew Mg/C delta co-doped GaN. Delta doping is found to be effective for realizing higher hole concentration than the conventional one.

    CiNii Article

  134. Study on C doping in GaN and AlGaN by MOVPE

    WAKASUGI Yuya, HONDA Yoshio, AMANO Hiroshi

    IEICE technical report. Electron devices   Vol. 113 ( 329 ) page: 47 - 50   2013.11

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We grew Mg/C co-doped GaN and AlGaN by MOVPE for identifying the C level in GaN and AlGaN. We measured electrical and optical properties by Hall effect measurement and cathodeluminescence (CL) measurement. Hole concentration in GaN increased with increase of C concentration at low C doping level, although that in AlGaN decreased with increase of C_2H_2 flow rate. All the samples show similar CL with peak wavelength of about 440nm. We also grew Mg/C delta co-doped GaN. Delta doping is found to be effective for realizing higher hole concentration than the conventional one.

    CiNii Article

  135. Quantum Efficiency of p-GaN with NEA surface for high brightness electron source

    Maekawa Takuya, Honda Yoshio, Amano Hiroshi, Nishitani Tomohiro

    Technical report of IEICE. LQE   Vol. 113 ( 331 ) page: 43 - 46   2013.11

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    We report the lifetime and high brightness condition of the NEA GaN surface for the high brightness and durability of the electron source using the p-type semiconductor surface with the negative electron affinity. After making the NEA surface on the p-GaN substrate in the ultra-high vacuum, we measured the wavelength and lifetime dependents of the quantum efficiency. We confirmed that the p-GaN substrate has over twenty times as long lifetime as p-GaAs substrate and it has the higher durability performance by the result. In addition, we knew that the quantum efficiency below the bandgap energy is decreased especially with deterioration of the surface function. By these results, NEA photocathode electron source using the p-GaN has the high durability and their deteriorated surface was suitable for becoming single color of the electron beam.

    CiNii Article

  136. Quantum Efficiency of p-GaN with NEA surface for high brightness electron source

    Maekawa Takuya, Honda Yoshio, Amano Hiroshi, Nishitani Tomohiro

    IEICE technical report. Component parts and materials   Vol. 113 ( 330 ) page: 43 - 46   2013.11

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We report the lifetime and high brightness condition of the NEA GaN surface for the high brightness and durability of the electron source using the p-type semiconductor surface with the negative electron affinity. After making the NEA surface on the p-GaN substrate in the ultra-high vacuum, we measured the wavelength and lifetime dependents of the quantum efficiency. We confirmed that the p-GaN substrate has over twenty times as long lifetime as p-GaAs substrate and it has the higher durability performance by the result. In addition, we knew that the quantum efficiency below the bandgap energy is decreased especially with deterioration of the surface function. By these results, NEA photocathode electron source using the p-GaN has the high durability and their deteriorated surface was suitable for becoming single color of the electron beam.

    CiNii Article

  137. Quantum Efficiency of p-GaN with NEA surface for high brightness electron source

    Maekawa Takuya, Honda Yoshio, Amano Hiroshi, Nishitani Tomohiro

    IEICE technical report. Electron devices   Vol. 113 ( 329 ) page: 43 - 46   2013.11

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We report the lifetime and high brightness condition of the NEA GaN surface for the high brightness and durability of the electron source using the p-type semiconductor surface with the negative electron affinity. After making the NEA surface on the p-GaN substrate in the ultra-high vacuum, we measured the wavelength and lifetime dependents of the quantum efficiency. We confirmed that the p-GaN substrate has over twenty times as long lifetime as p-GaAs substrate and it has the higher durability performance by the result. In addition, we knew that the quantum efficiency below the bandgap energy is decreased especially with deterioration of the surface function. By these results, NEA photocathode electron source using the p-GaN has the high durability and their deteriorated surface was suitable for becoming single color of the electron beam.

    CiNii Article

  138. Fabrication of InGaN/GaN Multiple Quantum Wells on (1(1)over-bar01) GaN

    Tanikawa Tomoyuki, Sano Tomotaka, Kushimoto Maki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JC05

    Web of Science

  139. Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer

    Ohata Toshiya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JB11

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  140. Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy

    Doi Tomohiro, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JB14

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  141. Stacking Faults and Luminescence Property of InGaN Nanowires

    Tabata Takuya, Paek Jihyun, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JE06

    Web of Science

  142. High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate

    Sano Tomotaka, Doi Tomohiro, Inada Shunko Albano, Sugiyama Tomohiko, Honda Yoshio, Amano Hiroshi, Yoshino Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.52.08JK09

    Web of Science

  143. Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer

    Yamada Takaya, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JB16

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  144. GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy

    Nakagawa Shinta, Tabata Takuya, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52 ( 8 )   2013.8

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    DOI: 10.7567/JJAP.52.08JE07

    Web of Science

  145. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

    K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, and H. Amano

    phys. stat. sol. (c)   Vol. 10 ( 3 ) page: 369-372   2013.3

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  146. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy

    K. Okuno, T. Oshio, N. Shibata, Y. Honda, M. Yamaguchi, S. Tanaka, and H. Amano

    phys. stat. sol. (c)   Vol. 10 ( 3 ) page: 369-372   2013.3

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  147. Growth of GaN on Si (111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer

    Yamada, Takaya; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB16   2013

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  148. Fabrication of InGaN/GaN Multiple Quantum Wells on (1bar 101) GaN

    Tanikawa, Tomoyuki; Sano, Tomotaka; Kushimoto, Maki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JC05   2013

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  149. Stacking Faults and Luminescence Property of InGaN Nanowires

    Tabata, Takuya; Paek, Jihyun; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JE06   2013

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  150. Effects of nano-and microscale SiO2 masks on the growth of a-plane GaN layers on r-plane sapphire

    Son, Ji-Su; Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Seo, Yong Gon; Hwang, Sung-Min; Baik, Kwang Hyeon;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JC04   2013

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  151. Characteristics of< i> a</i>-plane GaN films grown on optimized silicon-dioxide-patterned< i> r</i>-plane sapphire substrates

    Son, Ji-Su; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Baik, Kwang Hyeon; Seo, Yong Gon; Hwang, Sung-Min;

    Thin Solid Films   Vol. 546   page: 108-113   2013

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  152. Defects generation and annihilation in GaN grown on patterned silicon substrate

    Sawaki, N; Ito, S; Nakagita, T; Iwata, H; Tanikawa, T; Irie, M; Honda, Y; Yamaguchi, M; Amano, H;

    SPIE OPTO     page: 86250K-86250K-6   2013

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  153. High internal quantum efficiency blue-green light-emitting diode with small efficiency droop fabricated on low dislocation density GaN substrate

    Sano, Tomotaka; Doi, Tomohiro; Inada, Shunko Albano; Sugiyama, Tomohiko; Honda, Yoshio; Amano, Hiroshi; Yoshino, Takashi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JK09   2013

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  154. Growth mode and threading dislocation behavior of GaN films grown on patterned sapphire substrate with radial stripe pattern

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB09   2013

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  155. Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer

    Ohata, Toshiya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB11   2013

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  156. GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy

    Nakagawa, Shinta; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JE07   2013

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  157. Effects of exciton localization on internal quantum efficiency of InGaN nanowires

    Murotani, Hideaki; Yamada, Yoichi; Tabata, Takuya; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Journal of Applied Physics   Vol. 114 ( 15 ) page: 153506   2013

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  158. GaN Overgrowth on Thermally Etched Nanoporous GaN Template

    Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB03   2013

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  159. Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy

    Doi, Tomohiro; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JB14   2013

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  160. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN

    Amano, Hiroshi;

    Japanese Journal of Applied Physics   Vol. 52 ( 5R ) page: 50001   2013

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  161. I-1-2 Epitaxial growth of Ill-nitride by molecular beam epitaxy using high density radical source

    KAWAI Yohjiro, Hori Masaru, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, KONDO Hiroki, HIRAMATSU Mineo, KANO Hiroyuki, YAMAKAWA Kouji, DEN Shouji

    The Proceedings of the Conference on Information, Intelligence and Precision Equipment : IIP   Vol. 2013 ( 0 ) page: 5 - 7   2013

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    Publishing type:Research paper (scientific journal)   Publisher:The Japan Society of Mechanical Engineers  

    Although plasma-assisted molecular beam epitaxy(PA-MBE) is a promising technique for GaN growth,the growth rate obtained by this technique is lower than that obtained by metal organic vapor phase epitaxy(MOVPE).In order to improve the growth rate of the technique,high density radical source(HDRS) was developed.By vacuum ultraviolet absorption spectroscopy(VUVAS) measurement,two orders of magnitude higher radical density was confirmed in a comparison of the HDRS and a conventional radical source(CRS).While faster growth rate of 1.4μm/h in GaN homoepitaxy was achieved,better crystalline quality of InxGa_<(1-x)>N(x=0.03〜0.16) epilayers with approximately 1.4μm thickness were also achieved by introducing the HDRS in PA-MBE.

    DOI: 10.1299/jsmeiip.2013.5

    CiNii Article

  162. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy

    Okuno Koji, Oshio Takahide, Shibata Naoki, Honda Yoshio, Yamaguchi Masahito, Tanaka Shigeyasu, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3   Vol. 10 ( 3 ) page: 369 - 372   2013

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    DOI: 10.1002/pssc.201200587

    Web of Science

  163. Effects of low energy e-beam irradiation on cathodoluminescence from GaN Reviewed

    S. Suihkonen, H. Nykänen, T. Tanikawa, M. Yamaguchi, Y. Honda, and H. Amano

    phys. stat. sol. (a)   Vol. 210 ( 2 ) page: 383-385   2012.12

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  164. Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si

    KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

    IEICE technical report. Electron devices   Vol. 112 ( 32 ) page: 15 - 18   2012.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We grew high-quality semipolar (1-101) GaN stripes on a Si substrate by selective area growth and regrew InGaN/GaN MQW on these stripes with MOVPE. The PL peak wavelength at 300 K and InGaN well thickness for the obtained samples were 435-590 nm and 2-9 nm, respectively. In PL measurements from the surface, we found that a shorter wavelength and thinner well sample have PL polarization perpendicular to the c axis. On the other hand, as the PL wavelength is longer and/or the well is thicker, the PL polarization shifts from perpendicular to parallel. In the PL measurement from the (11 -22) edge surface of the sample with shorter wavelength, we observed the narrowing of PL spectrum. In addition, the parallel component of PL polarization increased with increase in well thickness. Therefore, we can control the direction of polarization by managing well thickness and indium composition and apply to make a LD structure.

    CiNii Article

  165. Polarization properties in InGaN/GaN multiple quantum well on semipolar(1-101)GaN/Si

    KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

    IEICE technical report. Component parts and materials   Vol. 112 ( 33 ) page: 15 - 18   2012.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We grew high-quality semipolar (1-101) GaN stripes on a Si substrate by selective area growth and regrew InGaN/GaN MQW on these stripes with MOVPE. The PL peak wavelength at 300 K and InGaN well thickness for the obtained samples were 435-590 nm and 2-9 nm, respectively. In PL measurements from the surface, we found that a shorter wavelength and thinner well sample have PL polarization perpendicular to the c axis. On the other hand, as the PL wavelength is longer and/or the well is thicker, the PL polarization shifts from perpendicular to parallel. In the PL measurement from the (11 -22) edge surface of the sample with shorter wavelength, we observed the narrowing of PL spectrum. In addition, the parallel component of PL polarization increased with increase in well thickness. Therefore, we can control the direction of polarization by managing well thickness and indium composition and apply to make a LD structure.

    CiNii Article

  166. Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si

    KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

      Vol. 112 ( 33 ) page: 15 - 18   2012.5

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    CiNii Article

  167. Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si

    KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

    Technical report of IEICE. SDM   Vol. 112 ( 34 ) page: 15 - 18   2012.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We grew high-quality semipolar (1-101) GaN stripes on a Si substrate by selective area growth and regrew InGaN/GaN MQW on these stripes with MOVPE. The PL peak wavelength at 300 K and InGaN well thickness for the obtained samples were 435-590 nm and 2-9 nm, respectively. In PL measurements from the surface, we found that a shorter wavelength and thinner well sample have PL polarization perpendicular to the c axis. On the other hand, as the PL wavelength is longer and/or the well is thicker, the PL polarization shifts from perpendicular to parallel. In the PL measurement from the (11 -22) edge surface of the sample with shorter wavelength, we observed the narrowing of PL spectrum. In addition, the parallel component of PL polarization increased with increase in well thickness. Therefore, we can control the direction of polarization by managing well thickness and indium composition and apply to make a LD structure.

    CiNii Article

  168. Strain relaxation in thick (1-101)InGaN grown on GaN/Si substrate Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    phys. stat. sol. (b)   Vol. 249 ( 3 ) page: 468–471   2012.3

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  169. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

    T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 646–649   2012.3

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  170. Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate Reviewed

    T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, and Y. Mori

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 875–878   2012.3

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  171. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

    T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 480–483   2012.3

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  172. A local vibration mode in a carbon doped (1-101)AlGaN

    N. Sawaki, K. Hagiwara, K. Yamashita, N. Koide, Y. Honda, M. Yamaguchi, and H. Amano

    SPIE   Vol. 8262   page: 82620D   2012.3

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  173. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE

    T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (c)   Vol. 9 ( 3-4 ) page: 646–649   2012.3

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  174. Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate

    Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Sawaki Nobuhiko

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 249 ( 3 ) page: 468 - 471   2012.3

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    DOI: 10.1002/pssb.201100445

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  175. Impurity incorporation in semipolar (1-1 0 1) GaN grown on an Si substrate

    Sawaki Nobuhiko, Hagiwara Kiyotaka, Hikosaka Toshiki, Honda Yoshio

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 27 ( 2 )   2012.2

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    DOI: 10.1088/0268-1242/27/2/024006

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  176. Impurity incorporation in semipolar (1-101) GaN grown on an Si substrate

    N. Sawaki, K. Hagiwara, T. Hikosaka, and Y. Honda

    Semicond. Sci. Technol.   Vol. 27   page: 024006_1-024006_5   2012.1

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  177. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE

    Tabata Takuya, Paek Jihyun, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   Vol. 9 ( 3-4 ) page: 646 - 649   2012

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    DOI: 10.1002/pssc.201100446

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  178. Crystal Growth of Semipolar GaN on Si Substrate(<Special Issue>Breakthrough in Nitride Crystal Growth for Next Generation Devices)

    Honda Yoshio

    Journal of the Japanese Association for Crystal Growth   Vol. 38 ( 4 ) page: 241 - 248   2012

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    Publishing type:Research paper (scientific journal)   Publisher:The Japanese Association for Crystal Growth  

    (1-101) GaN and (11-22) GaN was grown by MOVPE on etched Si substrate. A characteristic of optical, electrical and impurity was evaluated on each face GaN. We also reported an Indium incorporation and a process of dislocation propagation on the (1-101) GaN in this paper.

    DOI: 10.19009/jjacg.38.4_241

    CiNii Article

  179. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates

    Mitsunari Tadashi, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   Vol. 9 ( 3-4 ) page: 480 - 483   2012

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.201100502

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  180. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

    T. Inazu, S. Fukahori, C. Pernot, M. H. Kim, T. Fujita, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 12 ) page: 122101_1-122101_3   2011.12

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  181. Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

    T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, and N. Sawaki

    AIP Conf. Proc.   Vol. 1399   page: 503-504   2011.12

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  182. Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate Reviewed

    T. Sugiura, E.H. Kim, Y. Honda, H. Takagi, T. Tsukamoto, H. Andoh, M. Yamaguchi, and N. Sawaki

    AIP Conf. Proc.   Vol. 1399   page: 503-504   2011.12

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  183. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

    Inazu Tetsuhiko, Fukahori Shinya, Pernot Cyril, Kim Myung Hee, Fujita Takehiko, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Yamaguchi Masahito, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 12 )   2011.12

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    DOI: 10.1143/JJAP.50.122101

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  184. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

    Kim Myunghee, Fujita Takehiko, Fukahori Shinya, INAZU Tetsuhiko, PERNOT Cyril, NAGASAWA Yosuke, HIRANO Akira, IPPOMMATSU Masamichi, IWAYA Motoaki, TAKEUCHI Tetsuya, KAMIYAMA Satoshi, YAMAGUCHI Masahito, HONDA Yoshio, AMANO Hiroshi, AKASAKI Isamu

    Applied physics express   Vol. 4 ( 9 ) page: "092102 - 1"-"092102-3"   2011.9

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    CiNii Article

  185. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

    Kim Myunghee, Fujita Takehiko, Fukahori Shinya, Inazu Tetsuhiko, Pernot Cyril, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Yamaguchi Masahito, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

    APPLIED PHYSICS EXPRESS   Vol. 4 ( 9 )   2011.9

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    DOI: 10.1143/APEX.4.092102

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  186. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki

    Appl. Phys. Express   Vol. 4 ( 9 ) page: 092102_1-092102_3   2011.8

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  187. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    M.H. Kim, T. Fujita, S. Fukahori, T. Inazu, C. Pernot, Y. Nagasawa, A. Hirano, M. Ippommatsu, M. Iwaya, T. Takeuchi, S. Kamiyama, M. Yamaguchi, Y. Honda, H. Amano, and I. Akasaki

    Appl. Phys. Express   Vol. 4 ( 9 ) page: 092102_1-092102_3   2011.8

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  188. MOVPE growth of thick-InGaN on (1-101)GaN/Si

    TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, SAWAKI Nobuhiko

    IEICE technical report   Vol. 111 ( 44 ) page: 63 - 66   2011.5

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    We demonstrated thick InGaN growth on (1-101)GaN/Si. The grown samples had relative smooth surface with RMS value of less than 10nm. From X-ray reciprocal space mapping, InGaN layer showed incoherent growth. First, the lattice relaxation occurred by generation of misfit dislocations between InGaN/GaN interface and inclined along <0001> projection. At a high indium content, a high density of misfit dislocations was generated, resulted in a larger inclination. Along <11-20> direction, InGaN lattice relaxation only occurred along the in-plane direction.

    CiNii Article

  189. Aging test of AlGaN-based ultraviolet light emitting diodes : The Degradation Mechanism of UV-LED

    PARK Gwi Jin, SUGIYAMA Takayuki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, INAZU Tetsuhiko, FUJITA Takehiko, PERNOT Cyril, HIRANO Akira

    IEICE technical report   Vol. 111 ( 46 ) page: 123 - 126   2011.5

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    We have investigated the relationship between leak current and light efficiency from change in the current-voltage and current-light characteristics of ultraviolet light emitting diodes. With aging time, current-voltage characteristic indicates increase of leak current. The internal quantum efficiency decreased after 400 hours aging time. The possible degradation mechanism of quantum-wells is the thermal stress from leak current which do not effect to light emission of UV-LED.

    CiNii Article

  190. Aging test of AlGaN-based ultraviolet light emitting diodes : The Degradation Mechanism of UV-LED

    PARK Gwi Jin, SUGIYAMA Takayuki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, INAZU Tetsuhiko, FUJITA Takehiko, PERNOT Cyril, HIRANO Akira

    IEICE technical report   Vol. 111 ( 45 ) page: 123 - 126   2011.5

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    We have investigated the relationship between leak current and light efficiency from change in the current-voltage and current-light characteristics of ultraviolet light emitting diodes. With aging time, current-voltage characteristic indicates increase of leak current. The internal quantum efficiency decreased after 400 hours aging time. The possible degradation mechanism of quantum-wells is the thermal stress from leak current which do not effect to light emission of UV-LED.

    CiNii Article

  191. Aging test of AlGaN-based ultraviolet light emitting diodes : The Degradation Mechanism of UV-LED

    PARK Gwi Jin, SUGIYAMA Takayuki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, INAZU Tetsuhiko, FUJITA Takehiko, PERNOT Cyril, HIRANO Akira

    IEICE technical report   Vol. 111 ( 44 ) page: 123 - 126   2011.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We have investigated the relationship between leak current and light efficiency from change in the current-voltage and current-light characteristics of ultraviolet light emitting diodes. With aging time, current-voltage characteristic indicates increase of leak current. The internal quantum efficiency decreased after 400 hours aging time. The possible degradation mechanism of quantum-wells is the thermal stress from leak current which do not effect to light emission of UV-LED.

    CiNii Article

  192. MOVPE growth of thick-InGaN on (1-101)GaN/Si

    TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, SAWAKI Nobuhiko

    IEICE technical report   Vol. 111 ( 46 ) page: 63 - 66   2011.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We demonstrated thick InGaN growth on (1-101)GaN/Si. The grown samples had relative smooth surface with RMS value of less than 10 nm. From X-ray reciprocal space mapping, InGaN layer showed incoherent growth. First, the lattice relaxation occurred by generation of misfit dislocations between InGaN/GaN interface and inclined along <0001> projection. At a high indium content, a high density of misfit dislocations was generated, resulted in a larger inclination. Along <11-20> direction, InGaN lattice relaxation only occurred along the in-plane direction.

    CiNii Article

  193. MOVPE growth of thick-InGaN on (1-101)GaN/Si

    TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi, SAWAKI Nobuhiko

    IEICE technical report   Vol. 111 ( 45 ) page: 63 - 66   2011.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We demonstrated thick InGaN growth on (1-101)GaN/Si. The grown samples had relative smooth surface with RMS value of less than 10 nm. From X-ray reciprocal space mapping, InGaN layer showed incoherent growth. First, the lattice relaxation occurred by generation of misfit dislocations between InGaN/GaN interface and inclined along <0001> projection. At a high indium content, a high density of misfit dislocations was generated, resulted in a larger inclination. Along <11-20> direction, InGaN lattice relaxation only occurred along the in-plane direction.

    CiNii Article

  194. Current collapse in GaN-based HFETs : HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate

    SUGIYAMA T., HONDA Y., YAMAGUCHI M., AMANO H., ISOBE Y., OSHIMURA Y., IWAYA M., TAKEUCHI T., KAMIYAMA S., AKASAKI I., IMADE M., KITAOKA Y., MORI Y.

    IEICE technical report   Vol. 111 ( 44 ) page: 175 - 178   2011.5

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    We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing a high V_<th> and a small current collapse than c-plane HFETs. We also measured current collapse in normally off mode AlGaN/GaN JHFETs with a p-GaN gate. The large current collapse was observed in unpassivated sample, because AlGaN barrier of JHFETs was exposed to air by dry etching. On the other hand current collapse in the SiNx-passivated JHFETs is small and almost the same as that in as-grown HFETs.

    CiNii Article

  195. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE

    TABATA T., PAEK J. H., HONDA Y., YAMAGUCHI M., AMANO H.

    IEICE technical report   Vol. 111 ( 46 ) page: 45 - 48   2011.5

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    InGaN nanowires (NWs) are expected to have a good property with visible long wavelength range. In this study, we attempted to grow InGaN NWs on a (111)Si substrate by RF-MBE, and the growth temperature and In flux ratio dependence of the crystalline and optical properties were investigated. At the fixed growth temperature, photoluminescence (PL) peak wavelength in InGaN NWs shifted to long wavelength side with increasing In composition. As growth temperature increased, PL intensity increased with decrease in PL peak wavelength. This result suggests that In is more easily desorbed with increasing growth temperature. We also estimated that an internal quantum efficiency (IQE) was below 18%. This unfavorable IQE is considered to be mainly due to stacking faults observed in STEM images.

    CiNii Article

  196. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE

    TABATA T., PAEK J. H., HONDA Y., YAMAGUCHI M., AMANO H.

    IEICE technical report   Vol. 111 ( 44 ) page: 45 - 48   2011.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    InGaN nanowires (NWs) are expected to have a good property with visible long wavelength range. In this study, we attempted to grow InGaN NWs on a (111)Si substrate by RF-MBE, and the growth temperature and In flux ratio dependence of the crystalline and optical properties were investigated. At the fixed growth temperature, photoluminescence (PL) peak wavelength in InGaN NWs shifted to long wavelength side with increasing In composition. As growth temperature increased, PL intensity increased with decrease in PL peak wavelength. This result suggests that In is more easily desorbed with increasing growth temperature. We also estimated that an internal quantum efficiency (IQE) was below 18%. This unfavorable IQE is considered to be mainly due to stacking faults observed in STEM images.

    CiNii Article

  197. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE

    TABATA T., PAEK J. H., HONDA Y., YAMAGUCHI M., AMANO H.

    IEICE technical report   Vol. 111 ( 45 ) page: 45 - 48   2011.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    InGaN nanowires (NWs) are expected to have a good property with visible long wavelength range. In this study, we attempted to grow InGaN NWs on a (111)Si substrate by RF-MBE, and the growth temperature and In flux ratio dependence of the crystalline and optical properties were investigated. At the fixed growth temperature, photoluminescence (PL) peak wavelength in InGaN NWs shifted to long wavelength side with increasing In composition. As growth temperature increased, PL intensity increased with decrease in PL peak wavelength. This result suggests that In is more easily desorbed with increasing growth temperature. We also estimated that an internal quantum efficiency (IQE) was below 18%. This unfavorable IQE is considered to be mainly due to stacking faults observed in STEM images.

    CiNii Article

  198. Current collapse in GaN-based HFETs : HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate

    SUGIYAMA T., HONDA Y., YAMAGUCHI M., AMANO H., ISOBE Y., OSHIMURA Y., IWAYA M., TAKEUCHI T., KAMIYAMA S., AKASAKI I., IMADE M., KITAOKA Y., MORI Y.

    IEICE technical report   Vol. 111 ( 46 ) page: 175 - 178   2011.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing a high V_<th> and a small current collapse than c-plane HFETs. We also measured current collapse in normally off mode AlGaN/GaN JHFETs with a p-GaN gate. The large current collapse was observed in unpassivated sample, because AlGaN barrier of JHFETs was exposed to air by dry etching. On the other hand current collapse in the SiNx-passivated JHFETs is small and almost the same as that in as-grown HFETs.

    CiNii Article

  199. Current collapse in GaN-based HFETs : HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate

    SUGIYAMA T., HONDA Y., YAMAGUCHI M., AMANO H., ISOBE Y., OSHIMURA Y., IWAYA M., TAKEUCHI T., KAMIYAMA S., AKASAKI I., IMADE M., KITAOKA Y., MORI Y.

    IEICE technical report   Vol. 111 ( 45 ) page: 175 - 178   2011.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing a high V_<th> and a small current collapse than c-plane HFETs. We also measured current collapse in normally off mode AlGaN/GaN JHFETs with a p-GaN gate. The large current collapse was observed in unpassivated sample, because AlGaN barrier of JHFETs was exposed to air by dry etching. On the other hand current collapse in the SiNx-passivated JHFETs is small and almost the same as that in as-grown HFETs.

    CiNii Article

  200. Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (a)   Vol. 208 ( 5 ) page: 1175-1178   2011.5

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  201. Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

    C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 318 ( 1 ) page: 500-504   2011.5

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  202. Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes Reviewed

    T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

    phys. stat. sol. (a)   Vol. 208 ( 5 ) page: 1175-1178   2011.5

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  203. Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes

    Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 208 ( 5 ) page: 1175 - 1178   2011.5

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    DOI: 10.1002/pssa.201000907

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  204. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

    Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano

    Appl. Phys. Lett.   Vol. 98 ( 14 ) page: 141905   2011.4

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  205. Semi-polar GaN LEDs on Si substrate Reviewed

    N. Sawaki and Y. Honda

    SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page: 38-41   2011.4

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  206. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

    Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano

    Appl. Phys. Lett.   Vol. 98 ( 14 ) page: 141905   2011.4

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  207. Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed

    C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 318 ( 1 ) page: 500-504   2011.3

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  208. Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

    C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    SPIE   Vol. 7939   page: 79391X   2011.3

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  209. Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed

    C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    SPIE   Vol. 7939   page: 79391X   2011.3

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  210. Reduction of Efficiency Droop in Semipolar (1101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

    Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, LI Zhen-Yu, CHANG Wei-Ting, HSU Hung-Wen, KUO Hao-Chung, LU Tien-Chang, WANG Shing-Chung, LIAO Wei-Tsai, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Applied physics express   Vol. 4 ( 1 ) page: "012105 - 1"-"012105-3"   2011.1

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    CiNii Article

  211. Semi-polar GaN LEDs on Si substrate Reviewed

    N. Sawaki and Y. Honda

    SCIENCE CHINA Technological Sciences   Vol. 54 ( 1 ) page: 38-41   2011.1

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  212. Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

    C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    Appl. Phys. Express   Vol. 4 ( 1 ) page: 01210_1-012105_3   2011.1

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  213. Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

    T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page: 01AD04_1-01AD04_3   2011.1

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  214. Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

    C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    Appl. Phys. Express   Vol. 4 ( 1 ) page: 01210_1-012105_3   2011.1

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  215. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

    Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    Appl. Phys. Lett.   Vol. 98 ( 5 ) page: 051902_1-051902_3   2011.1

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  216. Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

    T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 50 ( 1 ) page: 01AD04_1-01AD04_3   2011.1

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  217. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

    Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

    Appl. Phys. Lett.   Vol. 98 ( 5 ) page: 051902_1-051902_3   2011.1

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  218. Drastic Reduction of Dislocation Density in Semipolar (11(2)over-bar2) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy

    Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Sawaki Nobuhiko

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 1 )   2011.1

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    DOI: 10.1143/JJAP.50.01AD04

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  219. Semi-polar GaN LEDs on Si substrate

    Sawaki Nobuhiko, Honda Yoshio

    SCIENCE CHINA-TECHNOLOGICAL SCIENCES   Vol. 54 ( 1 ) page: 38 - 41   2011.1

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    DOI: 10.1007/s11431-010-4182-2

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  220. Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

    Sugiyama Takayuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Oshimura Yoshinori, Iida Daisuke, Iwaya Motoaki, Akasaki Isamu

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

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    DOI: 10.1002/pssc.201001081

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  221. Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate

    Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

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    DOI: 10.1002/pssc.201000990

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  222. Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes

    Tanikawa Tomoyuki, Murase Tasuku, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8   Vol. 8 ( 7-8 )   2011

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.201000995

    Web of Science

  223. Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

    B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    Physica E   Vol. 42 ( 10 ) page: 2575-2578   2010.10

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  224. Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

    B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    Physica E   Vol. 42 ( 10 ) page: 2575-2578   2010.10

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  225. HVPE growth of a -plane GaN on a GaN template (110)Si substrate Reviewed

    T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 7 ( 7-8 ) page: 1760–1763   2010.7

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  226. MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE

    TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

    IEICE technical report   Vol. 109 ( 422 ) page: 23 - 28   2010.2

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    We investigated the InGaN/GaN multiple quantum well(MQW)thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

    CiNii Article

  227. MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE

    TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

    IEICE technical report   Vol. 109 ( 423 ) page: 23 - 28   2010.2

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    We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

    CiNii Article

  228. HVPE growth of a-plane GaN on a GaN template (110)Si substrate

    Tanikawa Tomoyuki, Suzuki Noriyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8   Vol. 7 ( 7-8 )   2010

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    DOI: 10.1002/pssc.200983563

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  229. Raman spectroscopic study of residual strain and stress in GaN layer grown on Si substrates

    Touko SUGIURA, Yoshio HONDA, Akihiro OKAMOTO, Hiroyuki TAKAGI, Takehiko TSUKAMOTO, Hiroya ANDOH

    Journal of National Institute of Technology, Toyota College   Vol. 42 ( 0 ) page: 19 - 22   2010

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    We have studied the residual strain and stress in semi-polar (1-101)GaN and conventional (0001)GaN grown on Si by means of Raman spectroscopy. By adopting the stress coefficients reported in the references, the residual strain of samples were deduced from the frequency shifts of the phonon modes in Raman spectra. As the results, it was found that the strain tensor of (1-101) GaN/Si was smaller than that of the (0001)GaN/Si in good agreement with the results obtained from the X-ray diffraction measurements.

    DOI: 10.20692/toyotakosenkiyo.KJ00005889042

    CiNii Article

  230. Percolation transport in an AlGaN/GaN heterostructure Invited Reviewed

    N. Sawaki, X. X. Han, Y. Honda, and M. Yamaguchi

    Journal of Physics: Conference Series   Vol. 193   page: 012012_1-012012_4   2009.11

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  231. Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates Reviewed

    M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Korean Phys. Soc.   Vol. 54 ( 6 ) page: 2363   2009.6

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  232. Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates

    Yang Min, Ahn Hyung Soo, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY   Vol. 54 ( 6 ) page: 2363 - 2366   2009.6

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  233. Growth and properties of semi-polar GaN on a patterned silicon substrate

    Sawaki Nobuhiko, Hikosaka Toshiki, Koide Norikatsu, Tanaka Shigeyasu, Honda Yoshio, Yamaguchi Masahito

    JOURNAL OF CRYSTAL GROWTH   Vol. 311 ( 10 ) page: 2867 - 2874   2009.5

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    DOI: 10.1016/j.jcrysgro.2009.01.032

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  234. Maskless selective growth of semi-polar (11(2)over-bar2) GaN on Si (311) substrate by metal organic vapor phase epitaxy

    Yang Min, Ahn Hyung Soo, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF CRYSTAL GROWTH   Vol. 311 ( 10 ) page: 2914 - 2918   2009.5

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    DOI: 10.1016/j.jcrysgro.2009.01.064

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  235. *DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed

    Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, and B. Monemar

    phys. stat. sol. (c)   Vol. 6 ( S2 ) page: S772   2009.5

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  236. *Growth and properties of semi-polar GaN on a patterned silicon substrate Reviewed

    N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2867   2009.3

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  237. Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy Reviewed

    M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2914   2009.3

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  238. MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer Reviewed

    M. Irie, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2891   2009.3

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  239. *Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si Reviewed

    T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2879   2009.3

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  240. *HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate Reviewed

    N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 311 ( 10 ) page: 2875   2009.3

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  241. Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures

    Han Xiuxun, Honda Yoshio, Narita Tetsuo, Yamaguchi Masahito, Sawaki Nobuhiko, Tanaka Tooru, Guo Qixin, Nishio Mitsushiro

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 42 ( 4 )   2009.2

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    DOI: 10.1088/0022-3727/42/4/045112

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  242. Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures Reviewed

    X.X. Han XX, T. Honda, T. Narita, M. Yamaguchi, N. Sawaki, T. Tanaka, Q.X. Guo, and M. Nishio

    J. Phys. D   Vol. 42 ( 4 ) page: 045112-1   2009.1

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  243. DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate

    Honda Yoshio, Hikosaka Toshiki, Yamaguchi Masahito, Sawaki Nobuhiko, Pozina Galia, Karlsson Fredrik, Darakchieva Vanya, Paskov Plamen, Monemar Bo

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2   Vol. 6   page: S772 - S775   2009

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    DOI: 10.1002/pssc.200880932

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  244. Time-resolved spectroscopy in an undoped GaN (1-101) Reviewed

    E.H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 1 ) page: 367-369   2008

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  245. Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE Reviewed

    T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 9 ) page: 2966-2968   2008

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  246. *Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates Reviewed

    T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 6 ) page: 2234?2237   2008

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  247. Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN Reviewed

    J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

    phys. stat. sol. (c)   Vol. 5 ( 6 ) page: 1746?1749   2008

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  248. Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate

    NAKAJIMA Yoshiki, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report   Vol. 107 ( 252 ) page: 97 - 102   2007.10

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    Hetero-epitaxial growth of an InGaN thin film was attempted with MOVPE on a GaN facet structure. The GaN trapezoidal structure was grown by selective MOVPE on a (111)Si substrate. The InGaN grown layer on the (0001)top facet shows strong ridge growth which is not explained by the diffusion of chemical species. The CL spectra on the facet were investigated. Remarkable broadening in the spectral peak was found out near the ridge on the (0001)facet which suggests the compositional fluctuation takes place in accordance with the ridge growth.

    CiNii Article

  249. Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate

    NAKAJIMA Yoshiki, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report   Vol. 107 ( 253 ) page: 97 - 102   2007.10

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    Hetero-epitaxial growth of an InGaN thin film was attempted with MOVPE on a GaN facet structure. The GaN trapezoidal structure was grown by selective MOVPE on a (111)Si substrate. The InGaN grown layer on the (0001)top facet shows strong ridge growth which is not explained by the diffusion of chemical species. The CL spectra on the facet were investigated. Remarkable broadening in the spectral peak was found out near the ridge on the (0001)facet which suggests the compositional fluctuation takes place in accordance with the ridge growth.

    CiNii Article

  250. Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate

    NAKAJIMA Yoshiki, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report   Vol. 107 ( 251 ) page: 97 - 102   2007.10

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    Hetero-epitaxial growth of an InGaN thin film was attempted with MOVPE on a GaN facet structure. The GaN trapezoidal structure was grown by selective MOVPE on a (111)Si substrate. The InGaN grown layer on the (0001)top facet shows strong ridge growth which is not explained by the diffusion of chemical species. The CL spectra on the facet were investigated. Remarkable broadening in the spectral peak was found out near the ridge on the (0001)facet which suggests the compositional fluctuation takes place in accordance with the ridge growth.

    CiNii Article

  251. Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy

    TANAKA Shigeyasu, AOYAMA Kentaro, ICHIHASHI Mikio, ARAI Shigeo, HONDA Yoshio, SAWAKI Nobuhiko

    Journal of electron microscopy   Vol. 56 ( 4 ) page: 141 - 144   2007.8

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  252. Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy

    Tanaka Shigeyasu, Aoyama Kentaro, Ichihashi Mikio, Arai Shigeo, Honda Yoshio, Sawaki Nobuhiko

    JOURNAL OF ELECTRON MICROSCOPY   Vol. 56 ( 4 ) page: 141 - 144   2007.8

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    DOI: 10.1093/jmicro/dfm016

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    PubMed

  253. Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure

    TANAKA Shigeyasu, NAITO Akiyuki, HONDA Yoshio, SAWAKI Nobuhiko, ICHIHASHI Mikio

    Journal of electron microscopy   Vol. 56 ( 2 ) page: 37 - 42   2007.4

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  254. Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure

    Tanaka Shigeyasu, Naito Akiyuki, Honda Yoshio, Sawaki Nobuhiko, Ichihashi Mikio

    JOURNAL OF ELECTRON MICROSCOPY   Vol. 56 ( 2 ) page: 37 - 42   2007.4

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    DOI: 10.1093/jmicro/dfm013

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    PubMed

  255. Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

    Han Xiuxun, Honda Yoshio, Narita Tetsuo, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF PHYSICS-CONDENSED MATTER   Vol. 19 ( 4 )   2007.1

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    DOI: 10.1088/0953-8984/19/4/046204

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  256. Mg doping in (1(1)over-bar01)GaN grown on a 7 degrees off-axis (001)Si substrate by selective MOVPE

    Hikosaka Toshiki, Koide Norikatsu, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JOURNAL OF CRYSTAL GROWTH   Vol. 298   page: 207 - 210   2007.1

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    DOI: 10.1016/j.jcrysgro.2006.10.229

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  257. Acceptor Level due to Carbon in a (1?101)AlGaN Reviewed

    N. Sawaki, N. Koide, T. Hikosaka, Y. Honda, and M. Yamaguchi

    AIP Conf. Proc.   Vol. 893   page: 281-282   2007

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  258. Al doping in (1?101) GaN films grown on patterned (001) Si substrate Reviewed

    T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Appl. Phys.   Vol. 101 ( 10 ) page: 103513-1-103513-5   2007

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  259. MOVPE growth and cathodoluminescence properties of GAN microcrystal co-doped with Zn and Si Reviewed

    Y. Honda, Y. Yanase, M. Tsuji, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 300 ( 1 ) page: 110-113   2007

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  260. Mg doping in (1-101)GaN grown on a 7o off-axis (001)Si substrate by selective MOVPE Reviewed

    T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 298   page: 207-210   2007

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  261. Transport properties of the two-dimensional electron gas in AlxGa1?xN/GaN heterostructures Reviewed

    X. Han, Y. Honda, T. Narita, M. Yamaguchi and N. Sawaki

    J. Phys.: Condens. Matter   Vol. 19 ( 4 ) page: 046204_1-046204_11   2007

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  262. Characterization of AlGaN, Te-doped GaN and Mg-doped GaN grown by hydride vapor phase epitaxy Reviewed

    K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, H. S. Ahn, M. Yang, W. J. Choi, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 133?136   2007

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  263. Growth of InGaN layer on GaN templated Al2O3 (0001) and Si (111) substrates by mixed-source HVPE Reviewed

    S. L. Hwang, K. S. Jang, K. H. Kim, H. S. Jeon, H. S. Ahn, M. Yang, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 125?128   2007

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  264. Fabrication of SAG-AlGaN/InGaN/AlGaN LEDs by mixed-source HVPE with multi-sliding boat system Reviewed

    K. H. Kim, K. S. Jang, S. L. Hwang, H. S. Jeon, W. J. Choi, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 1 ) page: 29?32   2007

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  265. Time-resolved photoluminescence spectroscopy in a GaN/AlGaN SQW structure grown on a (111) Si substrate Reviewed

    E.H. Kim, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2838-2841   2007

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  266. Electron-Beam-Induced-Current Investigation of GaN/AlGaN/Si Heterostructures Using Scanning Transmission Electron Microscopy Reviewed

    S. Tanaka, K. Aoyama, M. Ichihashi, S. Arai, Y. Honda, and N. Sawaki

    J. Electron Microsc.   Vol. 56 ( 4 ) page: 141-144   2007

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  267. Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure Reviewed

    S. Tanaka, A. Naito, Y. Honda, N. Sawaki, and M. Ichihashi

    J. Electron Microsc.   Vol. 56 ( 2 ) page: 37-42   2007

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  268. Characterization of AlGaN/InGaN/AlGaN heterostructure with selective area growth of Te-doped AlGaN cladding layer grown by mixed-source HVPE Reviewed

    K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, S. H. Jang, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2240-2243   2007

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  269. Subband structure and transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures Reviewed

    X. Han, Y. Honda, T. Narita, M. Yamaguchi and N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2334-2337   2007

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  270. The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2506-2509   2007

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  271. Series resistance in a GaN/AlGaN/n-Si structure grown by MOVPE Reviewed

    Y. Honda, S. Kato, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 4 ( 7 ) page: 2740-2743   2007

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  272. Carbon incorporation on (1101) facet of AlGaN in metal organic vapor phase epitaxy

    Koide Norikatsu, Hikosaka Toshiki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 45 ( 10A ) page: 7655 - 7660   2006.10

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    DOI: 10.1143/JJAP.45.7655

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  273. The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE

    Narita Tetsuo, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 243 ( 7 ) page: 1665 - 1668   2006.6

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    DOI: 10.1002/pssb.200565115

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  274. Series resistance in n-GaN/AIN/n-Si heterojunction structure

    Kondo Hiroyuki, Koide Norikatsu, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 45 ( 5A ) page: 4015 - 4017   2006.5

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    DOI: 10.1143/JJAP.45.4015

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  275. Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE Reviewed

    K. H. Kim, H. S. Ahn, M. Yang, K. S. Jang, S. L. Hwang, W. J. Choi, C. R. Cho, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1461?1465   2006

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  276. Carbon Incorporation on (1-101) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy Reviewed

    N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 45 ( 10A ) page: 7655-7660   2006

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  277. Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure Reviewed

    H. Kondo, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 45 ( 5A ) page: 4015?4017   2006

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  278. Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate Reviewed

    E. H. Kim, T. Hikosaka, T. Narita, Y. Honda, N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1992?1996   2006

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  279. p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE Reviewed

    T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1425?1428   2006

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  280. Cathodoluminescence properties of InGaN codoped with Zn and Si Reviewed

    Y. Honda, Y. Yanase, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 3 ( 6 ) page: 1915?1918   2006

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  281. The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (b)   Vol. 243 ( 7 ) page: 1665?1668   2006

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  282. The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

    HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 105 ( 90 ) page: 69 - 74   2005.5

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    Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

    CiNii Article

  283. The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

    HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. SDM   Vol. 105 ( 94 ) page: 69 - 74   2005.5

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    Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

    CiNii Article

  284. The effect of Si and C doping to the (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate

    HIKOSAKA Toshiki, KOIDE Norikatsu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Component parts and materials   Vol. 105 ( 92 ) page: 69 - 74   2005.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    Using a selective MOVPE method, (1-101)GaN was grown on a 7-degree off-axis (001)Si substrate. The top (1-101) surface of the sample was terminated with N, which is contrast to that the (0001) face is terminated with Ga. The doping of Si and C was attempted to control the type of conduction. A nominally undoped GaN/AlN heterostructure showed p-type conduction. The doping of Si changed the type of conduction from p-type to n-type. On the other hand, the hole concentration increased with the C doping level. These results proves that Si acts as a donor and C acts as an acceptor in (1-101)GaN. We might conclude that the p-type conduction is due to the incorporation of C on the top surface of the N face of the GaN.

    CiNii Article

  285. Uniform growth of GaN on AlN templated (111)Si substrate by HVPE Reviewed

    Y. Honda, M. Okano, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 2 ( 7 ) page: 2125? 2128   2005

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  286. Incorporation of carbon on a (1-101) facet of GaN by MOVPE Reviewed

    N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 284 ( 3-4 ) page: 341?346   2005

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  287. Characterization of AlGaN layer with high Al content grown by mixed-source HVPE Reviewed

    H. S. Ahn, K. H. Kim, M. Yang, J. Y. Yi, H. J. Lee, J. H. Chang, H. S. Kim, S. W. Kim, S. C. Lee, Y Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (a)   Vol. 202 ( 6 ) page: 1048?1052   2005

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  288. Doping in GaN and AlGaN Grown by Mixed-Source Hydride Vapor Phase Epitaxy Reviewed

    J. Y. Yi, Kyoung H. Kim, H. J. Lee, M.?Yang, H. S. Ahn, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, and N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 373-376   2005

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  289. Growth of AlGaN on Al2O3 substrates by Mixed-Source HVPE Reviewed

    K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, S. N. Yi, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, and N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 361-364   2005

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  290. Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE Reviewed

    T. Hikosaka, Y. Honda, N. Koide, M. Yamaguchi, and N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 184   page: 251-254   2005

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  291. Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy Reviewed

    H.S. Ahn, K.H. Kim, M. Yang, J.Y. Yi, H.J. Lee, C.R. Cho, H.K. Cho, S.W. Kim, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    Appl. Surf. Science   Vol. 243 ( 1-4 ) page: 178-182   2005

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  292. Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet Reviewed

    T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 2 ( 7 ) page: 2349?2352   2005

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  293. Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

    HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

    Technical report of IEICE. SDM   Vol. 104 ( 43 ) page: 17 - 22   2004.5

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    We had grown the GaN/AIN pyramid structure on (111)Si substrate by MOVPE. The non-uniformity of GaN shape was issue to solve. The reason of that was non-uniformity nucleation of AlN intermediate layer. We estimated the uniformity of GaN/AlN pyramid structure with changing the growth time of AlN intermediate layer. In the case of the thin AlN, we got uniform GaN/AlN structure. A thinner film of AlN contribute to the improvement of current-voltage characterization, we think it effective for the field emitting device.

    CiNii Article

  294. Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

    HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

    IEICE technical report. Component parts and materials   Vol. 104 ( 41 ) page: 17 - 22   2004.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We had grown the GaN/AIN pyramid structure on (111)Si substrate by MOVPE. The non-uniformity of GaN shape was issue to solve. The reason of that was non-uniformity nucleation of AlN intermediate layer. We estimated the uniformity of GaN/AlN pyramid structure with changing the growth time of AlN intermediate layer. In the case of the thin AlN, we got uniform GaN/AlN structure. A thinner film of AlN contribute to the improvement of current-voltage characterization, we think it effective for the field emitting device.

    CiNii Article

  295. Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

    HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

    IEICE technical report. Electron devices   Vol. 104 ( 39 ) page: 17 - 22   2004.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We had grown the GaN/AIN pyramid structure on (111)Si substrate by MOVPE. The non-uniformity of GaN shape was issue to solve. The reason of that was non-uniformity nucleation of AlN intermediate layer. We estimated the uniformity of GaN/AlN pyramid structure with changing the growth time of AlN intermediate layer. In the case of the thin AlN, we got uniform GaN/AlN structure. A thinner film of AlN contribute to the improvement of current-voltage characterization, we think it effective for the field emitting device.

    CiNii Article

  296. Fabrication and optical properties of GaN micro-prism array on an Si substrate Reviewed

    A. Nishioka, Y. Honda, and N. Sawaki

    Proc. of Int. Conf. on Electrical Engineering 2004   Vol. 3-1   page: 297-300   2004

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  297. Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1?101) GaN facet Reviewed

    Eun-Hee Kim, Tetsuo Narita, Yoshio Honda, and Nobuhiko Sawaki

    phys. stat. sol. (c)   Vol. 1 ( 10 ) page: 2512?2515   2004

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  298. Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001)Si substrate by metalorganic vapor phase epitaxy Reviewed

    S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, T. Tanji, and M. Ichihashi

    J. Cryst. Growth   Vol. 260 ( 3-4 ) page: 360-365   2004

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  299. Growth of thick AlGaN by metalorganic-hydride vapor phase epitaxy Reviewed

    K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, C. R. Cho, S. W. Kim, S. C. Lee, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 1 ( 10 ) page: 2474?2477   2004

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  300. Optical and electrical properties of (1-101)GaN grown on a 7[degree] off-axis (001)Si substrate Reviewed

    T. Hikosaka, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    Appl. Phys. Lett.   Vol. 84 ( 23 ) page: 4717-4719   2004

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  301. Photocurrent spectroscopy of a (0001) GaN/AlGaN/(111)Si heterostructure Reviewed

    Y. Kuroiwa, Y. Honda, N. Sawaki

    Physica E   Vol. 21 ( 2-4 ) page: 782-792   2004

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  302. The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth Reviewed

    T. Narita, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 7 ) page: 2154-2158   2003

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  303. HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate Reviewed

    Y. Nishimura, Y. Honda, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 7 ) page: 2506-2510   2003

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  304. Optical Characteristics of the AlGaN/GaN/AlGaN Waveguide Grown on (111) Si Substrate Reviewed

    H. Kim, K. H. Kim, M. Yang, H. S. Ahn, S. N. Yi, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Kor. Phys. Soc.   Vol. 42   page: S622-S624   2003

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  305. The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE Reviewed

    Y. Honda, M. Torikai, T. Nakamura, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 7 ) page: 2043-2046   2003

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  306. Infrared Reflectance in GaN/AlGaN Triangular Stripes Grown on Si(111) Substrates by MOVPE Reviewed

    M. Mizushima, T. Kato, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Kor. Phys. Soc.   Vol. 42 ( Supp. issue 2 ) page: S750-S752   2003

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  307. Photoluminescence Properties of a Self-Doped GaN Layer Grown on Si Substrate Reviewed

    K. H. Kim, H. Kim, M. Yang, H. S. Ahn, S. N. Yi, N. Kameshiro, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Kor. Phys. Soc.   Vol. 42 ( Supp. issue 2 ) page: S219-S221   2003

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  308. Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate

    Tanaka Shigeyasu, Honda Yoshio, Kameshiro Norifumi, IWASAKI Ryuta, SAWAKI Nobuhiko, TANJI Takayoshi

    Japanese journal of applied physics. Pt. 2, Letters   Vol. 41 ( 7 ) page: L846 - L848   2002.7

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    CiNii Article

  309. Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate

    NARITA Tetsuo, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 102 ( 114 ) page: 25 - 28   2002.6

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    A trapezoidal stripe structure and GaN/AlGaN heterostructure were fabricated on a (111)Si substrate by selective area metalorganic vapor phaseepitaxy(SAG-MOVPE). The stripe was made of (11^^-01) side facets and (0001) face at the top. The cathode luminescence spectra at 4.0K exhibited several DAP emission from the AlGaN alloy. It was shown that the optical spectra depend on the thickness of the film on the facets. This suggests that the strain at the heterointerface modifies the growth mode on the facet.

    CiNii Article

  310. Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate

    NARITA Tetsuo, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. LQE   Vol. 102 ( 117 ) page: 25 - 28   2002.6

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    A trapezoidal stripe structure and GaN/AlGaN heterostructure were fabricated on a (111)Si substrate by selective area metalorganic vapor phaseepitaxy(SAG-MOVPE). The stripe was made of (1101) side facets and (0001) face at the top. The cathode luminescence spectra at 4.0K exhibited several DAP emission from the AlGaN alloy. It was shown that the optical spectra depend on the thickness of the film on the facets. This suggests that the strain at the heterointerface modifies the growth mode on the facet.

    CiNii Article

  311. Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE

    TORIKAI Masayuki, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. LQE   Vol. 102 ( 117 ) page: 21 - 24   2002.6

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    MOVPE growth of a GaN/Al_xGa_1-xN hexagonal pyramid array was attempted on a (111)Si substrate. On a truncated GaN pyramidal structure, an Al_xGa_1-xN film was deposited. It was found that the Al composition is a strong function of the position on the facets. At the top of the pyramid, it was higher than that at the bottom. The phenomenon is attributed to the different diffusion coefficients of Al and Ga chemical species on the surface. In case of the AlN film, the CL spectrum at 4.2 K for the C-surface exhibited a strong peak 218nm. However, we found an array of pits of which structure reflecting the hexagonal structure of the facet.

    CiNii Article

  312. Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE

    TORIKAI Masayuki, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 102 ( 114 ) page: 21 - 24   2002.6

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    MOVPE growth of a GaN/Al_xGa_<1-x>N hexagonal pyramid array was attempted on a (111)Si substrate. On a truncated GaN pyramidal structure, an Al_xGa_<1-x> film was deposited. It was found that the Al composition is a strong function of the position on the facets. At the top of the pyramid, it was higher than that at the bottom. The phenomenon is attributed to the different diffusion coefficients of Al and Ga chemical species on the surface. In case of the AIN film, the CL spectrum at 4.2 K for the C-surface exhibited a strong peak 218nm. However, we found an array of pits of which structure reflecting the hexagonal structure of the facet.

    CiNii Article

  313. Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate

    KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Component parts and materials   Vol. 102 ( 78 ) page: 27 - 31   2002.5

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    The GaN grown on a (111) Silicon substrate has, usually, many cracks because of the large mismatch of the thermal expansion coefficients. We have proposed a method to reduce the strain due to this large mismatch by inclining the C-axis. On a 7 degrees off axis (001) Silicon substrate (111) facets are made by anisotropic etching in KOH solution. On this facet we grew GaN selectively, of which (1-101) surface is parallel to the Silicon substrate. Moreover, we fabricated AlGaN/GaN heterostructures on the (1-101) GaN.

    CiNii Article

  314. Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate

    KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 102 ( 76 ) page: 27 - 31   2002.5

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    The GaN grown on a (111) Silicon substrate has, usually, many cracks because of the large mismatch of the thermal expansion coefficients. We have proposed a method to reduce the strain due to this large mismatch by inclining the C-axis. On a 7 degrees off axis (001) Silicon substrate (111) facets are made by anisotropic etching in KOH solution. On this facet we grew GaN selectively, of which (1-101) surface is parallel to the Silicon substrate. Moreover, we fabricated AlGaN/GaN heterostructures on the (1-101) GaN.

    CiNii Article

  315. Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate

    KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. SDM   Vol. 102 ( 80 ) page: 27 - 31   2002.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    The GaN grown on a (111) Silicon substrate has, usually, many cracks because of the large mismatch of the thermal expansion coefficients. We have proposed a method to reduce the strain due to this large mismatch by inclining the C-axis. On a 7 degrees off axis (001) Silicon substrate (111) facets are made by anisotropic etching in KOH solution. On this facet we grew GaN selectively, of which (1-101) surface is parallel to the Silicon substrate. Moreover, we fabricated AlGaN/GaN heterostructures on the (1-101) GaN.

    CiNii Article

  316. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor- phase epitaxy

    KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Component parts and materials   Vol. 102 ( 78 ) page: 15 - 19   2002.5

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    The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO_2 grid mask pattern. Though rigde growth arose at egde region of the mask, GaN films free from cracks were achived. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcsec and that of the band edge emission of photoluminescence at 77K was 18.6 meV. I-V characteristics of a GaN/AlGaN/Si diode shows low resistance ohmic behavior, and The photocurrent spectra show existence of an amorphous Si layer at AlGaN/Si interface.

    CiNii Article

  317. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy

    KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 102 ( 76 ) page: 15 - 19   2002.5

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    The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO_2 grid mask pattern. Though rigde growth arose at egde region of the mask, GaN films free from cracks were achived. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcsec and that of the band edge emission of photoluminescence at 77K was 18.6 meV. I-V characteristics of a GaN/AlGaN/Si diode shows low resistance ohmic behavior, and The photocurrent spectra show existence of an amorphous Si layer at AlGaN/Si interface.

    CiNii Article

  318. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy

    KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Technical report of IEICE. SDM   Vol. 102 ( 80 ) page: 15 - 19   2002.5

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO_2 grid mask pattern. Though rigde growth arose at egde region of the mask, GaN films free from cracks were achived. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcsec and that of the band edge emission of photoluminescence at 77K was 18.6 meV. I-V characteristics of a GaN/AlGaN/Si diode shows low resistance ohmic behavior, and The photocurrent spectra show existence of an amorphous Si layer at AlGaN/Si interface.

    CiNii Article

  319. Growth of GaN free from cracks on a (111) Si substrate by selective metalorganic vapor-phase epitaxy Reviewed

    Y. Honda, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki

    Appl. Phys. Lett   Vol. 80 ( 2 ) page: 222-224   2002

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  320. Transmission electron microscopy study of the microstructure in selective-area-grown GaN and an AlGaN/GaN heterostructure on a 7-degree off-oriented (001) Si substrate Reviewed

    S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, and T. Tanji

    Jpn. J. Appl. Phys.   Vol. 41 ( 7B ) page: L846-L848   2002

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  321. HVPE Growth of GaN on a GaN Templated (111) Si Substrate Reviewed

    Y. Honda, T. Ishikawa, Y. Nishimura, M. Yamaguchi, and N. Sawaki

    phys. stat. sol. (c)   Vol. 0 ( 1 ) page: 107-111   2002

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  322. Fabrication of GaN/AlGaN MQW on (1-101) facet of wurtzite GaN grown on a (111) Si substrate by selective MOVPE Reviewed

    T. Kato, Y. Honda, M. Yamaguchi, N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 170   page: 789-794   2002

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  323. Growth of (1-101) GaN on a 7-degree off-oriented (001) Si substrate by selective MOVPE Reviewed

    Y. Honda, N. Kameshiro, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 242 ( 1-2 ) page: 82-86   2002

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  324. Growth of GaN crystal free from cracks on a (111) Si substrate by selective MOVPE Reviewed

    Y. Honda, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 242 ( 1-2 ) page: 77-81   2002

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  325. Fabrication of GaN/AlGaN heterostructures on a (111) Si substrate by selective MOVPE Reviewed

    T. Kato, Y. Honda, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 237-239 ( 2 ) page: 1099-1103   2002

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  326. Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate.

    Tanaka Shigeyasu, Honda Yoshio, Kameshiro Norifumi, Iwasaki Ryuta, Sawaki Nobuhiko, Tanji Takayoshi

    Japanese Journal of Applied Physics   Vol. 41 ( 7 ) page: L846 - L848   2002

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    Publishing type:Research paper (scientific journal)   Publisher:The Japan Society of Applied Physics  

    We have studied the microstructure in a (1&macr;101) GaN triangular bar and an AlGaN/GaN heterostructure formed on top of it by means of transmission electron microscopy. The nitride triangular bar was selectively grown on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy. Convergent beam electron diffraction was used to determine the lattice polarity. Threading dislocations were generated near the interface between the unmasked (111) facet of the Si and the nitride. These dislocations bend towards either the (1&macr;101) facet or the interface between the GaN and masked (&macr;1&macr;11) Si, and thread through to the facet or the interface. Dislocations were observed at the AlGaN/GaN interface. It is shown that the growth proceeded predominantly in the [0001] direction of the nitride with Ga-terminated polarity.

    DOI: 10.1143/JJAP.41.L846

    CiNii Article

  327. Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy

    Kato Tomonobu, Honda Yoshio, Kawaguchi Yasutoshi, YAMAGUCHI Masahito, SAWAKI Nobuhiko

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes   Vol. 40 ( 3 ) page: 1896 - 1898   2001.3

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    Publishing type:Research paper (scientific journal)   Publisher:Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo  

    A GaN/AlGaN double heterostructure was fabricated on the (1101) facets of a GaN triangular structure prepared by selective area growth by metalorganic vapor phase epitaxy. The photoluminescence (PL) and cathode luminescence (CL) spectra were investigated to characterize the structure. It was found that the PL peak wavelength due to the GaN quantum well is dependent on the well thickness. However, the Al composition of the AlGaN layer is dependent on the position on the (1101) facet. The anomalous gradient of the composition is attributed to the difference in the diffusion coefficients of Al and Ga on the surface.

    DOI: 10.1143/JJAP.40.1896

    CiNii Article

  328. Fabrication of GaN dots array on Si substrate by selective area growth method

    YAMAGUCHI Masahito, HONDA Yoshio, SAWAKI Nobuhiko

    Technical report of IEICE. SDM   Vol. 100 ( 643 ) page: 25 - 30   2001.2

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We have fabricated sub-micron GaN dots array on(111)Si substrate by metal organic vapor phase epitaxy(MOVPE)selective area growth. The SiO_2 mask for the selective area growth was prepared with electron beam lithography system and the circle window diameter of the mask was less than 250 nm. The bottom and top surface size of the fabricated GaN dots was about 250 nm and 50 nm, respectively. In comparison with the GaN dots grown on sapphire substrate, the shape of the facet was found to be clear. The optical properties in the GaN dot on Si substrate are relatively good. Therefore, the(111)Si substrate is suitable for the fabrication of the GaN quantum dots.

    CiNii Article

  329. Fabrication of GaN dots array on Si substrate by selective area growth method

    YAMAGUCHI Masahito, HONDA Yoshio, SAWAKI Nobuhiko

    IEICE technical report. Electron devices   Vol. 100 ( 641 ) page: 25 - 30   2001.2

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    We have fabricated sub-micron GaN dots array on (111) Si substrate by metal organic vapor phase epitaxy (MOVPE)selective area growth. The SiO_2 mask for the selective area growth was prepared with electron beam lithography system and the circle window diameter of the mask was less than 250 nm. The bottom and top surface size of the fabricated GaN dots was about 250 nm and 50 nm, respectively. In comparison with the GaN dots grown on sapphire substrate, the shape of the facet was found to be clear. The optical properties in the GaN dot on Si substrate are relatively good. Therefore, the (111) Si substrate is suitable for the fabrication of the GaN quantum dots.

    CiNii Article

  330. Selective growth of GaN/AlGaN microstructures by metalorganic vapor phase epitaxy Reviewed

    T. Kato, Y. Honda, Y. Kawaguchi, M. Yamaguchi, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 40 ( 3B ) page: 1896-1898   2001

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    Language:English   Publishing type:Research paper (scientific journal)  

  331. Structural characterization of GaN laterally overgrown on a (111)Si substrate Reviewed

    S. Tanaka, Y. Honda, N. Sawaki, and M. Hibino

    Appl. Phys. Lett   Vol. 79 ( 7 ) page: 955-957   2001

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    Language:English   Publishing type:Research paper (scientific journal)  

  332. Selective area growth of GaN microstructures on petterned (111) and (001) Si substrate Reviewed

    Y. Honda, Y. Kawaguchi, Y. Ohtake, M. Yamaguchi, and N. Sawaki

    J. Cryst. Growth   Vol. 230 ( 3-4 ) page: 346-350   2001

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  333. Fabrication of GaN micro-structures on (111) Si by selective area growth by MOVPE

    HONDA Y., OHTAKE Y., KAWAGUCHI Y., YAMAGUCHI M., SAWAKI N.

    IEICE technical report. Electron devices   Vol. 99 ( 616 ) page: 21 - 28   2000.2

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    Publishing type:Research paper (scientific journal)   Publisher:The Institute of Electronics, Information and Communication Engineers  

    Selective area growth(SAG)of stripe structure and hexagonal pyramids of GaN on a(111)Si substrate is studied with AlGaN intermediate layer. The crystalinity is much improved by the SAG as compared to that due to a conventional method. It is demonstrated that the formation process of the intermediate layer is the key issue to improve the optical properties as well as the crystalinity.

    CiNii Article

  334. Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE Reviewed

    Y. Honda, Y. Kawaguchi, T. Kato, M. Yamaguchi, and N. Sawaki

    IPAP Conf. Series   Vol. 1   page: 304-307   2000

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  335. Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy Reviewed

    Y. Kawaguchi, Y. Honda, M. Yamaguchi, N. Sawaki, and K. Hiramatsu

    Phys. Stat. Sol. (a)   Vol. 176   page: 553-556   1999

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  336. Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of wurtzite GaN on (111) Si substrate by metalorganic vapor phase epitaxy Reviewed

    Y. Kawaguchi, Y. Honda, M. Yamaguchi, K. Hiramatsu, and N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 162   page: 687-692   1999

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    Language:English   Publishing type:Research paper (scientific journal)  

  337. Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy

    Kawaguchi Yasutoshi, Honda Yoshio, Matsushima Hidetaka, YAMAGUCHI Masahito, HIRAMATSU Kazumasa, SAWAKI Nobuhiko

    Japanese journal of applied physics. Pt. 2, Letters   Vol. 37 ( 8 ) page: L966 - L969   1998.8

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    Publishing type:Research paper (scientific journal)   Publisher:社団法人応用物理学会  

    Selective area growth (SAG) of GaN on (111) Si substrate was studied using AlGaN as an intermediate layer. A hexagonal dot with a (0001) plane on the top and of a 5 µm or a submicron size was obtained using a patterned dot structure of silicon dioxide (SiO<SUB>2</SUB>) mask. The facet structure revealed that the <11\=20> axis of hexagonal GaN is parallel to the <110> axis of the Si substrate. The cathodoluminescence (CL) spectrum at 133 K exhibited a strong near-band-edge emission band for the submicron dots, which suggests excellent crystallinity. Epitaxial lateral overgrowth (ELO) of GaN on the Si substrate is demonstrated.

    DOI: 10.1143/jjap.37.L966

    CiNii Article

  338. Selective area growth of GaN on Si substrate using SiO_2 mask by metalorganic vapor phase epitaxy Reviewed

    Y. Kawaguchi, Y. Honda, H. Matsushima, M. Yamaguchi, K. Hiramatsu, and N. Sawaki

    Jpn. J. Appl. Phys.   Vol. 37 ( 8B ) page: L966-L969   1998

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Presentations 47

  1. Photocurrent and Photoluminescence measurements for InGaN Based LED Invited International conference

    Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano

    LEDIA'17 

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    Event date: 2017.4.19

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Pacifico Yokohama   Country:Japan  

  2. In-situ monitoring of Laser absorption and scattering method during InGaN growth by MOVPE Invited International conference

    Yoshio Honda, Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Kentaro Nagamatsu, Maki Kushimoto, Shugo Nitta, Hiroshi Amano

    The 7th International Symposium on Advanced Science and Technology of Silocon Material 

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    Event date: 2016.11.21 - 2016.11.25

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  3. In-situ monitoring of InGaN growth by Laser absorption and scattering method Invited International conference

    Yoshio Honda , Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Kentaro Nagamatsu, Maki Kushimoto, Shugo Nitta, Hiroshi Amano

    SPIE 

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    Event date: 2016.2.16

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  4. 世界を照らす青色LED

    本田善央

    第20回東海地区分析研究会講演会 

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    Event date: 2015.10.16

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  5. 発光ダイオード

    本田善央

    応用物理学会 赤﨑・天野記念LEDスクール 

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    Event date: 2015.9.20

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  6. InGaN growth mechanism evaluation by In-situ monitoring based on LAS International conference

    Yoshio Honda,Akira Tamura,Tetsuya Yamamoto, Maki Kushimoto,Hiroshi Amano

    2015 German-Japanese-Spanish Joint Workshop 

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    Event date: 2015.7.13

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  7. InGaN 系光デバイスの成長と特性評価

    本田善央,田村彰,山本哲也, 李 昇我, 久志本真希,天野浩

    STR 結晶成長 結晶成長 とデバイス 解析 

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    Event date: 2015.6.26

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  8. 世界を照らす青色発光ダイオード

    本田善央

    第58回名大カフェ 

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    Event date: 2015.6.24

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  9. InGaN成長中の光散乱を用いたin situ観察と成長機構

    本田善央,田村彰,山本哲也, 久志本真希,天野浩

    第23回シンポジウム「窒化物半導体の成長技術とメカニズム理解 

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    Event date: 2015.5.22

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  10. MOVPE法によるInGaN加圧成長とLAS法によるその場観察

    本田善央,田村彰,山本哲也, 久志本真希,天野浩

    日本結晶成長学会 ナノ構造・エピタキシャル成長分科会 2015年春季講演会 

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    Event date: 2015.5.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  11. Semi-polar GaN growth on patterned (001)Si substrate by MOVPE International conference

    Y. Honda, M. Kushimoto, and H. Amano

    2015 MRS Spring Meeting & Exhibit 

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    Event date: 2015.4.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  12. Si基板上半極性面GaN上光デバイスとInGaN結晶成長のその場観察 International conference

    本田善央,田村彰,宇佐美茂佳, 久志本真希,光成正,山口雅史,天野浩

    第5回フォトニックデバイス・応用技術研究会 

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    Event date: 2015.3.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  13. In-situ monitoring of InGaN MOVPE-growth by Laser Absorption and Scattering method International conference

    Yoshio Honda, Tetsuya Yamamoto, AkiraTamura, Tadashi Mitsunari and Hiroshi Amano

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    Event date: 2015.2.20

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  14. GaN基板上GaN系パワーデバイス開発

    ○本田 善央,出来 真斗,天野浩

    JST懇話会 

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    Event date: 2014.12.17

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  15. Ⅲ族窒化物半導体の結晶成長技術とデバイス応用

    本田善央,久志本真希,光成正, 山下康平,山口雅史,天野浩

    第18回VBLシンポジウム 

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    Event date: 2014.11.17 - 2014.11.18

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  16. Pressurized MOVPE of high-In-content InGaN International conference

    A.Tamura, K. Yamashita, T. Mitsunari, Y. Honda and H. Amano

    ICMOVPE-17(Tue-Oral-1-1 ) 

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    Event date: 2014.7.13 - 2014.7.18

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Switzerland  

  17. High pressure InGaN growth on Sapphire substrate by MOVPE International conference

    Yoshio Honda, Tomohiro Doi, Masahito Yamaguchi and Hiroshi Amano

    2013 JSAP-MRS Joint Symposia Symposium J(18p-M6-1) 

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    Event date: 2013.9.16 - 2013.9.20

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  18. 加圧MOVPEによるInGaN結晶成長

    坂倉誠也、土井友博、谷川智之、本田善央、山口雅史、天野浩

    第59回 応用物理学関係連合講演会 

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    Event date: 2012.3.15 - 2012.3.28

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  19. 加工Si基板上への非極性GaN選択成長

    本田善央,谷川智之,村瀬輔,光成正,山下康平,山口雅史

    第2回窒化物半導体結晶成長講演会 

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    Event date: 2010.5.14

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  20. 半極性,非極性GaN/Si基板の開発

    本田善央,澤木宣彦

    第6回窒化物半導体研究会 

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    Event date: 2009.10.30

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  21. Si基板上半極性面GaNへのInGaNヘテロ成長

    本田善央

    第1回窒化物半導体結晶成長講演会 

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    Event date: 2009.5.15

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  22. (110)Si 基板を用いた無極性(11-20)GaN の結晶成長

    本田善央

    特定領域研究「窒化物光半導体のフロンティア -材料潜在能力の極限発現-」公開シンポジウム 

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    Event date: 2008.8.1

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  23. 加工Si 基板上(1-101)及び(11-22)GaN へのInGaN ヘテロ成長

    本田善央

    特定領域研究「窒化物光半導体のフロンティア -材料潜在能力の極限発現-」公開シンポジウム 

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    Event date: 2008.8.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  24. Series Resistance of s-Si/AlGaN/GaN Structure Grown by MOVPE International conference

    Series Resistance of s-Si/AlGaN/GaN Structure Grown by MOVPE 

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    Event date: 2006.10.22

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  25. MOVPE growth and cathodoluminescence properties of GaN microcrystal co-doped with Zn and Si International conference

    MOVPE growth and cathodoluminescence properties of GaN microcrystal co-doped with Zn and Si 

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    Event date: 2006.1.4

    Language:English   Presentation type:Poster presentation  

  26. GaN micro-structure on Si substrate International conference

    GaN micro-structure on Si substrate 

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    Event date: 2005.12.15

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  27. Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate International conference

    Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate 

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    Event date: 2005.12.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  28. MOVPE選択成長法によるGaN微細構造の作製と評価

    本田善央,山口雅史,澤木宣彦

    第 9 回VBLシンポジウム 

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    Event date: 2005.10.24

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  29. Cathodoluminescence properties of InGaN codoped with Zn and Si International conference

    Cathodoluminescence properties of InGaN codoped with Zn and Si 

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    Event date: 2005.8.28

    Language:English   Presentation type:Poster presentation  

  30. Surface morphology of (1-101) GaN/AlGaN/GaN heterostructure grown on (001)Si substrate by MOVPE

    Y. Honda, T. Hikosaka, E. H.Kim, M. Yamaguchi and N. Sawaki

    第24 回電子材料シンポジウム 24th Electronic Materials Symposium (EMS-24) 

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    Event date: 2005.7.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  31. MOVPE成長したGaN/AlN/Siの電流電圧特性(Ⅱ)

    近藤広幸,加藤智志,本田善央,山口雅史,澤木宣彦

    第52回応用物理学関係連合講演会 

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    Event date: 2005.3.29

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  32. Uniform growth of GaN on AlN templated (111)Si substrate by HVPE International conference

    Uniform growth of GaN on AlN templated (111)Si substrate by HVPE 

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    Event date: 2004.7.19

    Language:English   Presentation type:Poster presentation  

  33. MOVPE 法による Si 基板上への GaN/AlN ピラミッド構造の作製

    本田善央,中村剛,山口雅史,澤木宣彦

    信学会電子デバイス(ED)研究会 

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    Event date: 2004.5.13

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  34. Defects in III-nitrides grown on patterned Si substrate International conference

    Defects in III-nitrides grown on patterned Si substrate 

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    Event date: 2004.3.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  35. The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE International conference

    The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE 

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    Event date: 2003.5.25

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  36. 選択MOVPE法による(111)Si基板上へのAlN/GaNピラミッド構造の作製

    本田善央,鳥飼正幸,山口雅史,澤木宣彦

    第50回応用物理学関係連合講演会 

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    Event date: 2003.3.27

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  37. HVPE growth of GaN on a GaN templated (111) Si substrate International conference

    HVPE growth of GaN on a GaN templated (111) Si substrate 

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    Event date: 2002.7.22

    Language:English   Presentation type:Oral presentation (general)  

  38. Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE International conference

    Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE 

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    Event date: 2001.7.30

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  39. Growth of (1-101)GaN on a 7 degree off oriented (001)Si substrate by selective MOVPE International conference

    Growth of (1-101)GaN on a 7 degree off oriented (001)Si substrate by selective MOVPE 

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    Event date: 2001.7.30

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  40. MOVPE選択成長法による(111)Si基板上へのクラックフリーGaNの作製

    本田善央,黒岩洋佑,山口雅史,澤木宣彦

    第48回応用物理学関係連合講演会 

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    Event date: 2001.3.28

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  41. MOVPE選択成長法によるSi(001)7度オフ基板上への(1-101)面GaNの成長

    本田善央,亀代典史,山口雅史,澤木宣彦

    第48回応用物理学関係連合講演会 

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    Event date: 2001.3.28

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  42. Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE International conference

    Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE 

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    Event date: 2000.9.24

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  43. Selective area growth and epitaxial lateral over growth of GaN on (111)Si by MOVPE International conference

    The 10th International Conference of Metalorganic Vapor Phase Epitaxy 

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    Event date: 2000.6.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  44. MOVPE選択成長法による(111)シリコン基板上への六方晶GaN微細構造の作製と制御

    本田善央,大竹洋一,川口靖利,山口雅史,澤木宣彦

    信学会電子デバイス(ED)研究会 

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    Event date: 2000.2.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  45. MOVPE法による(111)Si基板上へのGaN選択成長(2)

    本田善央,川口靖利,平松和政,澤木宣彦

    第46回応用物理学関係連合講演会 

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    Event date: 1999.3.28

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  46. MOVPE法による(111)Si基板上へのGaN選択成長

    本田善央,川口靖利,平松和政,澤木宣彦

    第59回応用物理学会学術講演会 

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    Event date: 1998.9.15

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  47. Photocurrent and Photoluminescence measurements for InGaN Based LED Invited

    Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano

    LEDIA'17  2017.4.19 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Pacifico Yokohama  

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Research Project for Joint Research, Competitive Funding, etc. 7

  1. 戦略的国際共同研究プログラム V4プロジェクト

    2015.11 - 2019.03

    JST 

    天野浩

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    Grant type:Competitive

    高In組成InGaNの高品質エピタキシャル成長と次世代ディスプレイ・照明及び通信用光源と高効率太陽電池

  2. 高性能・高信頼性太陽光発電の発電コスト低減技術開発

    2015.04 - 2018.03

    NEDO 

    天野浩

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    Grant type:Competitive

    窒化物半導体を用いた、超高効率・低コストⅢ-Ⅴ化合物太陽電池モジュールの研究開発を行う。

  3. GaNに関する拠点型共通基盤技術開発/GaN縦型パワーデバイスの基盤技術開発

    2014.04 - 2019.02

    戦略的イノベーション創造プログラム 

    須田淳

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    Grant type:Competitive

    GaNのm面上において不純物濃度の低減を行う。高温インプラによりMg注入P型伝導を実現する。

  4. Si基板上半極性GaN上InGaNの偏光制御によるLDの作製

    2011.12 - 2012.03

  5. Si基板上高品質GaNの開発

    2011.01 - Now

    国内共同研究 

  6. Si基板上半極性GaN基板を用いた高輝度LEDの開発

    2009.04 - 2010.03

    企業からの受託研究 

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    Si基板上に作製した半極性GaN上へLED構造を作製することで、ピエゾ電界の影響の少ない高輝度発光デバイ椅子の作製を行う。

  7. 高品質半極性・無極性GaN基板の作製

    2008.10 - 2012.03

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    Grant type:Competitive

    GaN系発光デバイスの更なる高輝度化に向けて半極性・無極性基板の作製法の確立が望まれている。本研究では、Siを基材として用いGaNヘテロ成長を行うことで高品質GaNバルク作製を目指す。

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KAKENHI (Grants-in-Aid for Scientific Research) 22

  1. 分極を有する半導体の物理構築と深紫外発光素子への展開

    2013.04 - 2016.03

    科学研究費補助金  特別推進研究

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    Authorship:Coinvestigator(s) 

  2. 半極性GaN/Si上へのInGaN高圧成長及び歪制御によるLDの作製

    2012.04 - 2015.03

    科学研究費補助金  若手研究(A)

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    Authorship:Principal investigator 

  3. Si基板上半極性GaNの積層欠陥、点欠陥抑制による光学的特性の改善

    2008.04 - 2011.03

    科学研究費補助金  若手研究(B)

    本田善央

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    Authorship:Principal investigator 

  4. 加工Si基板上(1-101)及び(11-22)GaNへのInGaNヘテロ成長

    2007.04 - 2009.03

    科学研究費補助金  特定領域研究(公募,A01),課題番号:19032005

    本田 善央

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    Authorship:Principal investigator 

  5. Si基板上A1Nテンプレートを用いたHVPE法による厚膜GaNバルク結晶の作製

    2004.04 - 2007.03

    科学研究費補助金  若手研究(B)

    本田 善央

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    Authorship:Principal investigator 

  6. Development of thermal neutron imaging sensor using BGaN semiconductor detector

    Grant number:19H04394  2019.04 - 2022.03

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  7. Semiconductor electron beam source that brings fine-area dynamics observation technology to damage sensitive samples

    Grant number:19H00666  2019.04 - 2022.03

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  8. Creation of a multi-dimensional and scale singularity structure in crystals and understanding of its mechanism

    Grant number:16H06416  2016.06 - 2021.03

    Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  9. Development of BGaN semiconductor devices for neutron semiconductor detector

    Grant number:16H03899  2016.04 - 2019.03

    Nakano Takayuki

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    Authorship:Coinvestigator(s)  Grant type:Competitive

    Recently, the use application of neutron has expanded, and neutron imaging techniques are expected in various fields. In this study, we proposed and developed the BGaN, a group III nitride semiconductor material, as a neutron semiconductor detector. In the epitaxial growth technology, we clarified that triethylboron (TEB), which was conventionally used as a metalorganic source, causes a gas phase reaction with ammonia in the gas phase to cause deterioration of the crystallinity by forming an adduct. Therefore, we have established a thick film epitaxial growth technology that suppresses gas phase reaction by using trimethylboron (TMB) as a new metalorganic source. The grown thick BGaN film has been used to realize the fabrication of a neutron detection diode, resulting in signal detection by neutron capture.

  10. 戦略的国際共同研究プログラム V4プロジェクト

    2015.11 - 2019.03

    JST  JST 

    天野浩

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    Grant type:Competitive

    高In組成InGaNの高品質エピタキシャル成長と次世代ディスプレイ・照明及び通信用光源と高効率太陽電池

  11. Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devices

    Grant number:25000011  2013 - 2015

    AMANO Hiroshi

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    Authorship:Coinvestigator(s)  Grant type:Competitive

    To improve internal quantum efficiency of AlGaN-based Deep UV (DUV) LED's, two step sublimation growth process of bulk AlN has been established. Ex situ annealing was found to be very effective to improve crystalline quality of very thin AlN on a sapphire substrate. Direct growth of transparent graphene on p-GaN was succeeded. Also control of carbon nanotube electrode was successfully conducted, thereby reducing the operation voltage. Polarization doping was found to be very effective to reduce operating voltage. As a result, high power DUV was commercialized and applied as a light source in a water purification system.

  12. LD fabrication on semipolar GaN/Si by induced pressure InGaN growth and strain control

    Grant number:24686041  2012.04 - 2015.03

    HONDA YOSHIO

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\27170000 ( Direct Cost: \20900000 、 Indirect Cost:\6270000 )

    In this study, we focus on the fabrication of the LD from blue to green region, by using semipolar GaN which could eliminate the internal polarization(piezo polarization). We could get semipolar GaN on patterned Si substrate with stripe shape. GaN and InGaN was taken the large stress due to the difference of the thermal expansion coefficient. In this structure, it was tensile stress along the stripe direction, on the other hand, it was compressive perpendicular direction. We found that InGaN luminous polarization direction was controlled to c axis direction owing to this stress. We made the laser structure on this structure and measured the optical property under high optical excitation condition. As a result, we confirm the stimulate emission from edge of the sample.

  13. A high efficiency III nitride solar cell with graded composition top layer

    Grant number:24656019  2012.04 - 2015.03

    SAWAKI Nobuhiko

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    Authorship:Collaborating Investigator(s) (not designated on Grant-in-Aid)  Grant type:Competitive

    Numerical studies has been done to improve the III-nitride solar cell performances. It was shown that, by adopting a graded composition p-type top layer in a single p-n junction solar cell, the conversion efficiency is enhanced up to 60 times by the internal built-in electric field which enhances the drift motion of photo-excited carriers. Optimum p-type top layer was estimated to be one thirds of the carrier diffusion length. In order to overcome the polarization self-compensation effects in a real device, reduction of Ga vacancy is essential to realize the p-type conduction in the graded layer on (0001) surface.

  14. Development of bridged nitride semiconductor nanowire LED on Si substrate

    Grant number:23651146  2011 - 2012

    HONDA Yoshio

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    Authorship:Principal investigator 

    Grant amount:\3640000 ( Direct Cost: \2800000 、 Indirect Cost:\840000 )

    We succeeded in growth of GaN nanowires (NWs) on trench wall of Si microstructure. In order to reduce adverse effects of a polarization electric fieldand buffer layers, we also succeeded in growth of InGaN NWs on Si substrate without any buffer layer. In contrast to GaN NWs, however, there are some twin boundaries in InGaN NWs. We investigated the relationship between the twin boundaries and the optical properties. Lastly, we attempted to grow GaN NWs on highly oriented pyrolytic graphite(HOPG) substrate in order to apply to future device, and we observed that GaN NWs grew on HOPG substrate.

  15. Growth of high quality InGaN-based superlattice using pulsed modulation plasma assisted molecular beam epitaxy

    Grant number:23656015  2011

    AMANO Hiroshi

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    Authorship:Coinvestigator(s) 

    Growth of high In content thick InGaN layers and InGaN nanowires were conducted by plasma assisted molecular beam epitaxy. InGaN/GaN superlattice structures are found to be very effective to realize low-defect-density high-In-content InGaN. PL intensity of InGaN nanowires is strongly affected by the density of basal stacking faults. It is possible to reduce stacking fault density by growing high In content InGaN nanowires at high growth temperature and high In flux ratio.

  16. Growth of high quality GaN on an Si substrate

    Grant number:22360009  2010 - 2012

    SAWAKI Nobuhiko

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    Authorship:Collaborating Investigator(s) (not designated on Grant-in-Aid) 

    The role of an AlInN buffer layer and an AlN nucleation layer incorporated with small amount of In has been investigated. The threading dislocation density in the grown layer was much reduced by these two layers. The FTIR spectra in a carbon doped (1-101)AlGaN layer showed a local vibration mode which is attributed to Al-C bond. This shows that the p-type conduction is organized by the carbon sitting on an N site.

  17. Growth of high-quality thick InGaN by raised-pressure MOVPE

    Grant number:22246004  2010 - 2012

    AMANO Hiroshi

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    Authorship:Coinvestigator(s) 

    MOVPE reactor having two buffer tanks for the supply of pressurized TMGa and TMIn, has been operated from 1 atm to 10 atm. It was found that with increasing the reactor pressure, thermal conductivity of the gas increases, thus metalorganic precursors were fully decomposed before reaching the substrate. Therefore, reactor was redesigned and repaired. Then, we can successfully grow high In content InGaN at raised pressure. InGaN based-quantum wells grown at 6 atm shows emission wavelength longer than 120 nm compared with that grown at 1 atm.

  18. Optical property improvement of the semipolar GaN on Si by the reduction of stacking faults or point defects.

    Grant number:20760012  2008 - 2010

    HONDA Yoshio

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    Authorship:Principal investigator 

    Grant amount:\4290000 ( Direct Cost: \3300000 、 Indirect Cost:\990000 )

    We made semi-polar GaN on etched Si substrate by selective MOVPE method. In the case of (11-22)GaN, we succeeded the high quality GaN of which dislocation density is less than 10^5/cm^2. In the case of (1-101)GaN, since the dislocation was vended at the initial growth, it did not propagate to the surface of the GaN crystal. As a result, we also achieved the dislocation density of less than10^5/cm^2on this face. We tested the optical property of high quality semi-polar (1-101)GaN. We grew InGaN/GaN MQW structure and excited by pulse laser from top side. The optical detector was set at the side edge and we could get stimulated emission. This is the first result in the world, therefore, it prove that we could get high quality semi-polar GaN crystal.

  19. 加工Si基板上(1-101)及び(11-22)GaNへのInGaNヘテロ成長

    Grant number:19032005  2007 - 2008

    本田 善央

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    Authorship:Principal investigator 

    Grant amount:\6800000 ( Direct Cost: \6800000 )

    昨年度は低In組成領域のInGaNにおいて、(1-101)、(11-22)、(0001)各面でのIn取り込み効率の検討を行った。本年度はこれに加えて緑〜赤色程度までの高組成領域で検討を試みた。(1-101)面においては、Inの取り込み効率が高く、特に低V/III比の条件下で顕著な差がみられた。(0001)、(11-22)面では低In組成領域では同様なIn取り込み効率であった。そこで、Inの供給量を変化してPLピークよりIn取り込み効率を考察した。(11-22)面においては、In供給量に対応して発光ピークがレッドシフトしており、黄色領域の発光まで変化することが可能であった。一方(0001)面では、In供給量が70%程度を超えるあたりで、発光ピーク波長が飽和しており、温度による組成制御が必要であった。この結果から、(11-22)面では高温において高組成InのInGaN成長が可能であり、InGaN結晶品質の向上が期待される。さらに、PLの励起強度依存性を調べた結果、半極性面においてはピークシフトがほとんど見られず、発光強度も線形に変化していた。(0001)面ではQCSEにより励起強度を下げるに従って、レッドシフトと発光強度の著しい減少がみられた。このことから、半極性GaN上へのInGaN結晶を成長することで(1)高品質結晶を得られる可能性があること、(2)ピエゾ電界の影響を大幅に抑制可能であることが明らかとなった。

  20. Selective epitaxial growth of nitride nano-hetero structures on patterned silicon substrate

    Grant number:16106001  2004 - 2008

    SAWAKI Nobuhiko

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    Authorship:Coinvestigator(s) 

  21. Si基板上A1Nテンプレートを用いたHVPE法による厚膜GaNバルク結晶の作製

    Grant number:16760252  2004 - 2006

    本田 善央

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    Authorship:Principal investigator 

    Grant amount:\3700000 ( Direct Cost: \3700000 )

    前年度までに、Si基板を用いてGaN厚膜単結晶の成長を試み、200nm程度のAlN中間層を介してHVPEによりGaN結晶成長を行うと、Si基板のメルトバックエッチングを抑制することが可能であることを見出した。その結果100μm以上の厚膜GaNを得ることに成功している。しかしながら長時間成長においては基板界面からGaNへ向かい変質層が確認された。変質層には20%を超えるSiが含まれ、依然として耐性が完全ではなく、ゆっくりではあるがメルトバックエッチングが起きていることが分かった。昨年度は、AlNテンプレートの成長条件の検討しメルトバックエッチングの抑制を図った。今年度この結果を用い、HVPE成長条件及び選択成長改善により更なるメルトバックエッチングの抑制を試みた。
    成長用基板にはSi(111)を用い、MOVPE法により150nmのAlN上に200nmのGaN薄膜を成長させた。この基板上へSiO_2をマスクとした3/3μmのドットパターンを形成した。この基板をテンプレートとして、HVPE-GaNを成長した。まず、HVPE成長温度を1000〜1100℃と変化させ成長を行った。1100℃の場合、マスクの有無に関わらず全面がメルトバックエッチングをおこしていた。成長温度を1025〜1075℃程度の領域では、マスク無ではメルトバックを起こしていたが、マスクが有る場合メルトバックはほとんど起きなかった。1000℃の場合、どちらの場合もメルトバックエッチングは起こらなかった。これらの結果から、メルトバックの反応は温度に対して非常に敏感であり1000℃付近で急激に抑制できること、選択成長がメルトバック抑制に効果的であることが確認された。以上の実験を踏まえて、厚膜の作製を試みた。選択成長用マスクを施した基板を成長用基板し、1000℃にて5時間行った。得られた結晶は400μm程度の膜厚があり、基板として利用可能な膜厚を満たしていた。そこで、フッ硝酸にてSiをエッチングすることでGaN自立基板を得ることに成功した。XRDにより(0004)のロッキングカーブを測定した結果、半値幅は390arcsecであり、同時に成長したサファイア基板の240arcsecと比較してもそれほど変わらずC軸配向性は良好であった。本研究ではSi基板のAlN結晶品質、HVPEの成長長条件の改善により初めてSi基板を持ちいてGaN自立基板を作製することを可能とした。

  22. SELECTIVE GROWTH OF III-NITRIDE MICROSTRUCTURES ON SILICON SUBSTRATE

    Grant number:13305023  2001 - 2003

    SAWAKI Nobuhiko

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    Authorship:Coinvestigator(s) 

    Adopting the selective area growth method (SAG) in the metal-organic vapor phase epitaxy (MOVPE) of III-nitrides, we have developed the growth of GaN/AlGaN and InGaN/GaN micro-and nano-heterostructure on specific crystal facets. It was found that the formation process and properties of the AlN intermediate layer on the silicon substrate has the essential role to the following growth of III-nitrides. We have achieved a single crystal free from cracks with the size of 200-500 micron across. The diffusion processes of the chemical species in the gas phase and on the surface were found to give an important role to determine the composition of the alloy as well as the layer thicknesses. The role of the inter-surface diffusion of Ga was discussed in detail.
    The growth of (1-101) GaN was performed on a 7 degree off oriented (001) silicon substrate. By declining the axis, we achieved crack free and extremely flat N-surface for the first time. Because of the flat interface, the optical properties of an InGaN/GaN double heterostructure exhibited a sharp edge emission. Using the material we achieve a optical waveguide with extremely low j optical loss for the near band edge wavelengths. Optical spectra and decay processes of excitons were investigated with femto-second spectroscopy and it was found that the decay rate is decreased by reducing the size of dot/disk.
    The method was developed to the growth of a thick GaN by hydride vapor phase epitaxy (HyPE). Using a thick MN intermediate layer, we achieved a uniform 23 micron thick GaN layer on (111)Si.

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Industrial property rights 11

  1. 発光層形成用基材、発光体及び発光物質

    本田 善央、澤木 宣彦、柳瀬 康行、一柳 昌幸、稲岡 宏弥、森 連太郎、木山 明

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    Applicant:国立大学法人名古屋大学、トヨタ自動車株式会社

    Application no:特許出願2005-244354  Date applied:2005.8.25

    Announcement no:特許公開2007-56164 

    Country of applicant:1  

  2. 発光層形成用基材、発光体及び発光物質

    本田 善央, 澤木 宣彦, 柳瀬 康行, 一柳 昌幸, 稲岡 宏弥, 森 連太郎, 木山 明

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    Applicant:国立大学法人名古屋大学、トヨタ自動車株式会社

    Application no:特許出願2005-244354  Date applied:2005.8.25

    Announcement no:特許公開2007-56164 

  3. カーボンドープ半導体膜、半導体素子、及びこれらの製造方法

    澤木 宣彦、山口 雅史、本田 善央、彦坂 年輝、小出 典克、真部 勝英

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    Applicant:北川工業株式会社

    Application no:特許出願2004-92289  Date applied:2004.3.26

    Announcement no:特許公開2005-277342 

    Country of applicant:1  

  4. 窒化物半導体結晶層の作製方法、窒化物半導体結晶層、及び窒化物半導体結晶層作製用の基材

    澤木 宣彦、本田 善央、西村 慶之

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    Applicant:国立大学法人名古屋大学

    Application no:特許出願2003-370790  Date applied:2003.10.30

    Announcement no:特許公開2005-136200 

    Country of applicant:1  

  5. 半導体素子構造、電子エミッタ、及び半導体素子構造の作製方法

    澤木 宣彦、本田 善央

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    Applicant:名古屋大学長

    Application no:特許出願2002-280182  Date applied:2002.9.26

    Announcement no:特許公開2004-119168 

    Country of applicant:1  

  6. 半導体発光素子およびその製造方法

    澤木 宣彦、本田 善央、亀代 典史、山口 雅史、田中 成泰、小出 典克

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    Applicant:澤木 宣彦、シャープ株式会社

    Application no:特許出願2002-38263  Date applied:2002.2.15

    Announcement no:特許公開2003-243702 

    Country of applicant:1  

  7. 半導体発光素子の製造方法

    小出 典克、山本 淳次、堂北 剛、澤木 宣彦、本田 善央、黒岩 洋佑、山口 雅史

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    Applicant:シャープ株式会社、澤木 宣彦

    Application no:特許出願2001-338536  Date applied:2001.11.2

    Announcement no:特許公開2003-142728 

    Country of applicant:1  

  8. 半導体レーザ素子およびその製造方法

    澤木 宣彦、本田 善央、亀代 典史、山口 雅史、小出 典克、伊藤 茂稔、大野 智輝、古川 勝紀

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    Applicant:澤木 宣彦、シャープ株式会社

    Application no:特許出願2001-240413  Date applied:2001.8.8

    Announcement no:特許公開2002-246697 

    Country of applicant:1  

  9. 窒化物半導体の製造方法

    澤木 宣彦、本田 善央、小出 典克

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    Applicant:澤木 宣彦、シャープ株式会社

    Application no:特許出願2001-191227  Date applied:2001.6.25

    Announcement no:特許公開2003-8061 

    Country of applicant:1  

  10. 化合物半導体単結晶の製造方法およびその利用

    澤木 宣彦、山口 雅史、本田 善央

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    Applicant:三菱化学株式会社

    Application no:特許出願2001-46837  Date applied:2001.2.22

    Announcement no:特許公開2002-249400 

    Country of applicant:1  

  11. 半導体素子

    澤木 宣彦、本田 善央、小出 典克

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    Applicant:澤木 宣彦、シャープ株式会社

    Application no:特許出願2000-382164  Date applied:2000.12.15

    Announcement no:特許公開2002-185041 

    Country of applicant:1  

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Teaching Experience (On-campus) 10

  1. 電気電子情報工学学生実験

    2013

  2. 電気回路論および演習

    2013

  3. 電気電子情報工学学生実験

    2013

  4. 電気電子情報工学学生実験

    2012

  5. 電気電子情報工学学生実験

    2012

  6. 電気回路論および演習

    2012

  7. 電気電子情報工学学生実験

    2011

  8. 電気電子情報工学学生実験

    2011

  9. 電気回路論および演習

    2011

  10. 電気回路論演習

    2004

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