Updated on 2022/03/31

写真a

 
OHNO, Yutaka
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Professor
Graduate School
Graduate School of Engineering
Title
Professor

Degree 2

  1. Master of Engineering

  2. Doctor of Engineering

Research Interests 13

  1. トランジスタ

  2. 半導体デバイス

  3. 表界面

  4. 電子物性

  5. 光物性

  6. カーボンナノチューブ

  7. 窒化ガリウム

  8. 半導体

  9. ナノデバイス

  10. 微細加工

  11. 半導体プロセス

  12. 光デバイス

  13. 微細加工

Research Areas 2

  1. Others / Others  / Nano Materials/Nano Bioscience

  2. Others / Others  / Electronic Device/Electronic Equipment

Current Research Project and SDGs 2

  1. ナノカーボン材料に基づくフレキシブルエレクトロニクスの創製

  2. ナノ材料に基づくエネルギーハーベスティング技術の創出

Research History 7

  1. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section   Professor

    2015.10

  2. Visiting Professor, Aalto University

    2012.7 - 2013.6

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    Country:Finland

  3. 名古屋大学工学研究科准教授

    2008.4

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    Country:Japan

  4. 名古屋大学工学研究科 助教

    2007.4 - 2008.3

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    Country:Japan

  5. 科学技術振興機構 戦略的創造研究事業 さきがけ研究員(併任)

    2003.10 - 2007.3

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    Country:Japan

  6. 名古屋大学工学研究科 助手

    2000.4 - 2007.3

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    Country:Japan

  7. 日本学術振興会 特別研究員

    1999.1 - 2000.3

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    Country:Japan

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Education 1

  1. Nagoya University   Graduate School, Division of Engineering   Department of Quantum Engineering

    - 2000

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    Country: Japan

Professional Memberships 5

  1. 応用物理学会

  2. アメリカ化学会

  3. フラーレン・ナノチューブ・グラフェン学会

  4. 日本物理学会

  5. 電子情報通信学会

Committee Memberships 2

  1. フラーレン・ナノチューブ・グラフェン学会   会長  

    2020.4   

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    Committee type:Academic society

  2. International Microprocesses and Nanotechnology Conference   Section sub-head  

    2005.11 - 2008.10   

Awards 5

  1. APEX/JJAP編集貢献賞受賞

    2013.4   応用物理学会  

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    Country:Japan

  2. 講演奨励賞

    2003.11   応用物理学会  

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    Country:Japan

  3. Nanoscale Horizons Presentation Prize

    2021.3   Royal Society of Chemistry   Self-aligned hybrid quantum structure of diamond nitrogen-vacancy center and carbon nanotube for electrical control of quantum states

    H. Uchiyama

  4. 第60回フラーレン・ナノチューブ・グラフェン総合シンポジウム 若手奨励賞

    2021.3   フラーレン・ナノチューブ・グラフェン学会   Self-aligned hybrid quantum structure of diamond nitrogen-vacancy center and carbon nanotube for electrical control of quantum states

    内山晴貴

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    Award type:Award from international society, conference, symposium, etc. 

  5. 永井科学技術財団財団賞 学術賞

    2016.3   永井科学技術財団   立体形状に成形可能な全カーボン電子デバイスの研究開発

    大野雄高

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

 

Papers 335

  1. In situ monitoring of the electrical property of carbon nanotube thin film in floating catalyst chemical vapor deposition Reviewed

    Oshima H., Iwase K., Ohno Y.

    Japanese Journal of Applied Physics   Vol. 61 ( 3 )   2022.3

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    Authorship:Last author   Language:English   Publisher:Japanese Journal of Applied Physics  

    In floating catalyst chemical vapor deposition (FCCVD), when a carbon nanotube (CNT) network film is produced by filter collection, the film thickness is adjusted by controlling the collection time. However, even with consistent synthesis parameters, the synthesis condition in FCCVD changes constantly depending on the carbon and catalyst adhesion to the inner wall of the reaction tube. Thus, the rate of synthesis changes, making it difficult to obtain the target film thickness repeatedly and stably. We propose a method of monitoring CNT film thickness and percolation threshold by the in situ measurement of the electrical impedance during the deposition. The time evolution of the measured impedance is reproducible by an equivalent electrical circuit simulation.

    DOI: 10.35848/1347-4065/ac4a5e

    Scopus

  2. PMMA/Al<inf>2</inf>O<inf>3</inf>bilayer passivation for suppression of hysteresis in chemically doped carbon nanotube thin-film transistors Reviewed

    Tan F.W., Hirotani J., Kishimoto S., Ohno Y.

    Japanese Journal of Applied Physics   Vol. 61 ( 3 )   2022.3

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    Authorship:Last author, Corresponding author   Language:English   Publisher:Japanese Journal of Applied Physics  

    Hysteresis is usually present in carbon nanotube thin-film transistors exposed to air due to adsorbed water and oxygen molecules. Thus, it is desirable to passivate the device from these environmental effects and provide an air-stable platform for chemical doping to tune the threshold voltages. Here, we demonstrate p- and n-doped carbon nanotube transistors with suppressed hysteresis using bilayer stacking of poly(methyl methacrylate) and aluminum oxide (Al2O3) passivation layers using a low-temperature process suitable for flexible substrates. The results show that the bilayer passivation layers achieved reduced hysteresis to be 2.25% of applied gate voltage at low operation voltage as 2 V.

    DOI: 10.35848/1347-4065/ac5264

    Scopus

  3. Temperature dependence of Raman shift in defective single-walled carbon nanotubes Reviewed

    Endo Masanori, Uchiyama Haruki, Ohno Yutaka, Hirotani Jun

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 2 )   2022.2

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    Authorship:Corresponding author   Language:English   Publisher:Applied Physics Express  

    Raman scatterings of both pristine and defective single-walled carbon nanotubes were measured. Defects on carbon nanotubes (CNTs) were induced by UV/O3 treatment, and the correlation between the temperature dependence of the Raman shift of the G-band and the crystallinity of CNTs was investigated. In the temperature range of 250-600 K, a gradual negative change in the slope was observed; the linear shift of the Raman G-band frequency with respect to temperature increased as the crystallinity deteriorated. This phenomenon is attributed to the increase in the fourth-order phonon-phonon scattering interaction resulting from the induced defects.

    DOI: 10.35848/1882-0786/ac4678

    Web of Science

    Scopus

  4. In-plane dual-electrode triboelectric nanogenerator based on differential surface functionalization Reviewed

    Matsunaga M., Hirotani J., Ohno Y.

    Applied Physics Express   Vol. 15 ( 2 )   2022.2

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    Authorship:Last author, Corresponding author   Language:English   Publisher:Applied Physics Express  

    Stretchable triboelectric nanogenerators (s-TENGs) are promising power sources for self-powered wearable electronics. Conventional single-electrode s-TENGs require an external ground electrode to form a closed circuit. We propose an in-plane dual-electrode s-TENG based on differential surface functionalization to eliminate the external ground electrode. The s-TENG comprises fully stretchable materials such as carbon nanotube thin films and elastomers. The top surface of the elastomer was functionalized to produce a difference in electronegativity between the two electrode regions. A high output power density of 3.5 W m-2 was obtained by tapping the two electrode regions by hand.

    DOI: 10.35848/1882-0786/ac4d07

    Scopus

  5. Carbon Nanotube-Based Nanomechanical Receiver for Digital Data Transfer Reviewed

    Funayama K., Tanaka H., Hirotani J., Shimaoka K., Ohno Y., Tadokoro Y.

    ACS Applied Nano Materials   Vol. 4 ( 12 )   2021.12

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    Language:English   Publisher:ACS Applied Nano Materials  

    The evolution of carbon nanomaterials can provide tremendous advantages in sensing, computation, and functional materials. A carbon nanotube (CNT) has outstanding thermal and electrical conductivity features and is one of the most promising nanoscale carbon materials. It has a hardness of up to 1 TPa. Exploiting these features, nanomechanical systems with CNTs have been reported to achieve ultrasensitive sensors for mass, force, and electromagnetic waves owing to their outstanding elastic and electric properties. Some research groups have attempted to achieve digital data transfer in potential nanoscale wireless terminals with carbon nanomaterials. Although conceptual demonstrations have been reported, the fundamental capability of the transfer, particularly in the presence of noise, is yet to be explained. Here, we experimentally demonstrate for the first time that an ultrasmall digital receiver with a nanomechanical nanoantenna can transfer a vast amount of digital data, up to 1 Mbit, even in the presence of noise. We successfully transfer a digital image data with 393 216 bits. This demonstration proves that the data-transfer capability is close to the theoretical limit established in information theory and channel capacity. This small but robust nanomechanical receiver will contribute to the forthcoming data-oriented age of Internet of things (IoT)- and artificial intelligence (AI)-based systems.

    DOI: 10.1021/acsanm.1c02563

    Scopus

  6. Stretchable triboelectric nanogenerator based on carbon nanotubes Invited Reviewed

    MATSUNAGA Masahiro, KAWAGUCHI Atsushi, OHNO Yutaka

    Oyo Buturi   Vol. 90 ( 11 ) page: 684 - 688   2021.11

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    Authorship:Last author, Corresponding author   Language:Japanese   Publisher:The Japan Society of Applied Physics  

    <p>Triboelectric energy harvesters are expected as a power source for self-powered wearable devices since they can generate electricity from the low-frequency motion of the human body. For wearable device applications, high stretchability is required to follow the dynamic three-dimensional surface of the human body. We have realized a stretchable sheet-shaped triboelectric energy harvester with a high output and elasticity. The high output has been achieved by a fluorine plasma treatment for the surface of the dielectric layer. We demonstrate a self-powered signal transmitter and LED-embedded gloves, exploiting the characteristics of the harvester. Furthermore, we propose a highly efficient intermittent operation circuit to drive electronic devices, using a small amount of power generated by the harvester. Our study can contribute to solve the problem of power source limitations in wearable electronics.</p>

    DOI: 10.11470/oubutsu.90.11_684

    CiNii Research

  7. Dynamic Range Enhancement via Linearized Output in Nanoelectromechanical Systems by Combining High-Order Harmonics Reviewed International journal

    K. Funayama, H. Tanaka, J. Hirotani, K. Shimaoka, Y. Ohno, and Y. Tadokoro

    IEEE Trans. on Circuits and Systems II   Vol. 68 ( 10 ) page: 3251 - 3255   2021.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TCSII.2021.3062390

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  8. Special issue on Carbon-based Electronics Invited Reviewed

    Das Saptarshi, Ohno Yutaka, Kawarada Hiroshi

    CARBON   Vol. 182   page: 856 - 856   2021.9

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    Language:English   Publisher:Carbon  

    DOI: 10.1016/j.carbon.2021.07.001

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  9. Tunable carbon nanotube diode with varying asymmetric geometry Reviewed

    K. Funayama, J. Hirotani, A. Miura, H. Tanaka, Y. Ohno, and Y. Tadokoro

    AIP Advances   Vol. 11 ( 7 ) page: 075212   2021.7

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  10. Effect of electrochemical functionalization of single-walled carbon nanotube electrodes in flexible enzymatic biofuel cells Reviewed

    D. Momaya and Y. Ohno

    Jpn. J. Appl. Phys.   Vol. 60 ( 6 ) page: 068002   2021.6

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ac0261

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    Scopus

  11. Simple and highly efficient intermittent operation circuit for triboelectric nanogenerator toward wearable electronic applications Reviewed International journal

    A. Kawaguchi, H. Uchiyama, M. Matsunaga, and Y. Ohno

    Appl. Phys. Exp.   Vol. 14 ( 5 )   2021.5

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/abf405

    Scopus

  12. Low-voltage carbon nanotube complementary electronics using chemical doping to tune the threshold voltage Reviewed International journal

    F. W. Tan, J. Hirotani, Y. Nonoguchi, S. Kishimoto, H. Katsura, and Y. Ohno

    Appl. Phys. Exp.   Vol. 14 ( 4 ) page: 045002   2021.4

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/abe8aa

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  13. ZnO Nanostructures Application in Electrochemistry: Influence of Morphology Reviewed International coauthorship International journal

    Sulciute Agne, Nishimura Keita, Gilshtein Evgeniia, Cesano Federico, Viscardi Guido, Nasibulin Albert G., Ohno Yutaka, Rackauskas Simas

    JOURNAL OF PHYSICAL CHEMISTRY C   Vol. 125 ( 2 ) page: 1472 - 1482   2021.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acs.jpcc.0c08459

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    Scopus

  14. Cross-linking gelation of isomaltodextrin for the chromatographic separation of semiconducting carbon nanotubes Reviewed International journal

    Matsunaga Yuki, Hirotani Jun, Ohno Yutaka, Omachi Haruka

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 1 )   2021.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/abd28b

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  15. Low-Voltage Operable and Strain-Insensitive Stretchable All-Carbon Nanotube Integrated Circuits with Local Strain Suppression Layer Reviewed International journal

    Nishio Yuya, Hirotani Jun, Kishimoto Shigeru, Kataura Hiromichi, Ohno Yutaka

    ADVANCED ELECTRONIC MATERIALS   Vol. 7 ( 1 )   2021.1

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/aelm.202000674

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    Scopus

  16. Effect of metal electrodes on optically detected magnetic resonance of nitrogen vacancy centers in diamond Reviewed International journal

    Uchiyama Haruki, Kishimoto Shigeru, Ishi-Hayase Junko, Ohno Yutaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 12 )   2020.12

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abc3d7

    Web of Science

    Scopus

  17. Fabrication of Carbon Nanotube Thin Films for Flexible Transistors by Using a Cross-Linked Amine Polymer Reviewed International journal

    Matsumoto Kaisei, Ueno Kazuki, Hirotani Jun, Ohno Yutaka, Omachi Haruka

    CHEMISTRY-A EUROPEAN JOURNAL   Vol. 26 ( 28 ) page: 6118 - 6121   2020.5

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/chem.202000228

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    Scopus

    PubMed

  18. High output voltage generation of over 5 V from liquid motion on single-layer MoS2 Reviewed International journal

    Aji Adha Sukma, Nishi Ryohei, Ago Hiroki, Ohno Yutaka

    NANO ENERGY   Vol. 68   2020.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.nanoen.2019.104370

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  19. High-output, transparent, stretchable triboelectric nanogenerator based on carbon nanotube thin film toward wearable energy harvesters

    Matsunaga Masahiro, Hirotani Jun, Kishimoto Shigeru, Ohno Yutaka

    NANO ENERGY   Vol. 67   2020.1

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.nanoen.2019.104297

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  20. Fast and Ultraclean Approach for Measuring the Transport Properties of Carbon Nanotubes

    Wei Nan, Laiho Patrik, Khan Abu Taher, Hussain Aqeel, Lyuleeva Alina, Ahmed Saeed, Zhang Qiang, Liao Yongping, Tian Ying, Ding Er-Xiong, Ohno Yutaka, Kauppinen Esko I.

    ADVANCED FUNCTIONAL MATERIALS   Vol. 30 ( 5 )   2020.1

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/adfm.201907150

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  21. Dependence of enhancement factor on electrode size for field emission current from carbon nanotube on silicon wafer

    Funayama Keita, Tanaka Hiroya, Hirotani Jun, Shimaoka Keiichi, Ohno Yutaka, Tadokoro Yukihiro

    NANOTECHNOLOGY   Vol. 30 ( 42 ) page: 425201   2019.10

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6528/ab33c8

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  22. Aqueous two-phase extraction of semiconducting single-wall carbon nanotubes with isomaltodextrin and thin-film transistor applications

    Omachi Haruka, Komuro Tomohiko, Matsumoto Kaisei, Nakajima Minako, Watanabe Hikaru, Hirotani Jun, Ohno Yutaka, Shinohara Hisanori

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 9 )   2019.9

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/ab369e

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  23. Effects of HLA mismatch on cytomegalovirus reactivation in cord blood transplantation

    Yokoyama Hisayuki, Kanda Junya, Kato Shunichi, Kondo Eisei, Maeda Yoshinobu, Saji Hiroo, Takahashi Satoshi, Onizuka Makoto, Onishi Yasushi, Ozawa Yukiyasu, Kanamori Heiwa, Ishikawa Jun, Ohno Yuju, Ichinohe Tatsuo, Takanashi Minoko, Kato Koji, Atsuta Yoshiko, Kanda Yoshinobu, Ikegame Kazuhiro, Utsunomiya Atae, Kawase Takakazu, Kim Sung-Won, Kuwatsuka Yachiyo, Kobayashi Takeshi, Takatsuka Yoshifusa, Takahashi Yoshiyuki, Tanaka Junji, Tamaki Hiroya, Tsuji Masanori, Nishida Tetsuya, Masuko Masayoshi, Matsuno Ryosuke, Murata Makoto, Morishima Satoko, Morishima Yasuo, Yokoyama Hisayuki, Wake Atsushi, Watanabe Nobuhiro, Ashida T., Hoshino Takumi, Yabe Toshio, Sakamoto Kana, Fuji Shigeo, Miyamura Koichi, Arima Nobuyoshi, Kondo Eisei, Yoshimitsu Makoto, Kawamura Koji, Kawata Takahito, Kishimoto Kenji, Tatara Raine, Hagino Takeshi, Fujiwara Shin-Ichiro, Shimomura Yoshimitsu, Sakaguchi Hirotoshi, Hirabayashi Shigeki, Ishii Hiroto, Onda Yoshiyuki, Kato Itaru, Kawajiri Akihisa, Shindo Takero, Tokunaga Masahito, Nonami Atsushi, Muranushi Hiroyuki, Yoshinaga Noriyoshi, Kawashima Naomi, Shiratori Souichi, Tada Yuma, Tanoue Sus-Umu, Hirayama Masahiro, Fukunaga Keiko, Ohbiki Marie

    BONE MARROW TRANSPLANTATION   Vol. 54 ( 7 ) page: 1004 - 1012   2019.7

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41409-018-0369-0

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  24. Electrical property measurement of two-dimensional hole-gas layer on hydrogen-terminated diamond surface in vacuum-gap-gate structure

    Inaba Masafumi, Kawarada Hiroshi, Ohno Yutaka

    APPLIED PHYSICS LETTERS   Vol. 114 ( 25 ) page: 253504   2019.6

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5099395

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    CiNii Research

  25. Operando Analysis of Electron Devices Using Nanodiamond Thin Films Containing Nitrogen-Vacancy Centers

    Uchiyama Haruki, Saijo Soya, Kishimoto Shigeru, Ishi-Hayase Junko, Ohno Yutaka

    ACS OMEGA   Vol. 4 ( 4 ) page: 7459 - 7466   2019.4

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    Language:Japanese   Publisher:ACS Omega  

    Operando analysis of electron devices provides key information regarding their performance enhancement, reliability, thermal management, etc. For versatile operando analysis of devices, the nitrogen-vacancy (NV) centers in diamonds are potentially useful media owing to their excellent sensitivity to multiple physical parameters. However, in single crystal diamond substrates often used for sensing applications, placing NV centers in contiguity with the active channel is difficult. This study proposes an operando analysis method using a nanodiamond thin film that can be directly formed onto various electron devices by a simple solution-based process. The results of noise analysis of luminescence of the NV centers in nanodiamonds show that the signal-to-noise ratio in optically detected magnetic resonance can be drastically improved by excluding the large 1/f noise of nanodiamonds. Consequently, the magnetic field and increase in temperature caused by the device current could be simultaneously measured in a lithographically fabricated metal microwire as a test device. Moreover, the spatial mapping measurement is demonstrated and shows a similar profile with the numerical calculation.

    DOI: 10.1021/acsomega.9b00344

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  26. Graft-versus-MDS effect after unrelated cord blood transplantation: a retrospective analysis of 752 patients registered at the Japanese Data Center for Hematopoietic Cell Transplantation

    Ishiyama Ken, Aoki Jun, Itonaga Hidehiro, Uchida Naoyuki, Takahashi Satoshi, Ohno Yuju, Matsuhashi Yoshiko, Sakura Toru, Onizuka Makoto, Miyakoshi Shigesaburo, Takanashi Minoko, Fukuda Takahiro, Atsuta Yoshiko, Nakao Shinji, Miyazaki Yasushi

    BLOOD CANCER JOURNAL   Vol. 9 ( 3 )   2019.3

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41408-019-0192-x

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  27. Highly Uniform, Flexible Microelectrodes Based on the Clean Single-Walled Carbon Nanotube Thin Film with High Electrochemical Activity

    Nguyen Xuan Viet, Kishimoto Shigeru, Ohno Yutaka

    ACS APPLIED MATERIALS & INTERFACES   Vol. 11 ( 6 ) page: 6389 - 6395   2019.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsami.8b19252

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  28. Enhancement of the electron transfer rate in carbon nanotube flexible electrochemical sensors by surface functionalization

    Nishimura Keita, Ushiyama Takuya, Viet Nguyen Xuan, Inaba Masafumi, Kishimoto Shigeru, Ohno Yutaka

    ELECTROCHIMICA ACTA   Vol. 295   page: 157 - 163   2019.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.electacta.2018.10.147

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  29. Origins of the variability of the electrical characteristics of solution-processed carbon nanotube thin-film transistors and integrated circuits

    Hirotani Jun, Kishimoto Shigeru, Ohno Yutaka

    NANOSCALE ADVANCES   Vol. 1 ( 2 ) page: 636 - 642   2019.2

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    Language:Japanese   Publisher:Nanoscale Advances  

    Carbon nanotube (CNT) thin-film transistors based on solution processing have great potential for use in future flexible and wearable device technologies. However, the considerable variability of their electrical characteristics remains a significant obstacle to their practical use. In this work, we investigated the origins of the variability of these electrical characteristics by performing statistical analysis based on spatial autocorrelation and Monte Carlo simulation. The spatial autocorrelation of the on-current decreased with increasing distance on the order of millimetres, showing that macroscopic non-uniformity of the CNT density was one of the causes of the characteristic variability. In addition, even in the local regime where the macroscopic variability is negligible, the variability was greater than that expected based on the Monte Carlo simulation. The CNT aggregation could be attributed to microscopic variability. We also investigated the variability of the properties of integrated circuits such as inverters and ring oscillators fabricated on flexible plastic film. All of the inverters worked well, and their threshold voltage variations were fairly small. As the number of stages in the ring oscillator increased, the yield decreased, although the oscillation frequency variability improved.

    DOI: 10.1039/c8na00184g

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  30. Carbon Nanotube Thin Films for High-Performance Flexible Electronics Applications

    Hirotani Jun, Ohno Yutaka

    TOPICS IN CURRENT CHEMISTRY   Vol. 377 ( 1 ) page: 3   2019.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s41061-018-0227-y

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  31. Noise Modeling in Field Emission and Evaluation of the Nano-Receiver in Terms of Temperature

    Funayama Keita, Tanaka Hiroya, Hirotani Jun, Shimaoka Keiichi, Ohno Yutaka, Tadokoro Yukihiro

    IEEE ACCESS   Vol. 7   page: 57820 - 57828   2019

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    Language:Japanese   Publisher:IEEE Access  

    The field-emission phenomenon is exploited in a broad variety of applications and systems. Previous studies have reported that the current induced by field emission strongly and inherently depend on the temperature. This dependence enhances the noise in the current, which results in performance degradation in, for example, signal detection and communications in nanoscale receivers. In this paper, a mathematical model is presented for the suppression of the noise based on its probability density. Our experiment and analysis revealed that the density follows a Gaussian distribution, and the dependence on temperature is observed to be exponential. This result is intriguing because in the field of signal processing and communication, the influence of temperature is often considered with a noiseerature model, namely, linear dependence. Using our derived model, we theoretically evaluated the communication performance of a nanoscale receiver; owing to the exponential dependence on temperature, severe performance degradation was found with increasing temperature. This means that, as field-emission technology continues to be developed, the temperature should be kept low, for example, at room temperature, to secure the reliability of nanoscale communication devices.

    DOI: 10.1109/ACCESS.2019.2913692

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  32. Stochastic Optimal Control to Minimize the Impact of Manufacturing Variations on Nanomechanical Systems

    Ito Yuji, Funayama Keita, Hirotani Jun, Ohno Yutaka, Tadokoro Yukihiro

    IEEE ACCESS   Vol. 7   page: 171195 - 171205   2019

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    Language:Japanese   Publisher:IEEE Access  

    This paper presents a control method intended to suppress the effects of manufacturing variations on nanomechanical systems. Often, the resonance characteristics of nanoscale devices are inconsistent, due to unavoidable variations in the fabrication process. This is important because resonant vibrations enhance the sensitivities of the devices. As such, the sensitivities of these systems can be degraded if the device characteristics are not identified. To address this fundamental problem, this paper presents a multidisciplinary method based on control theory, nanotechnology, and communication technology. A stochastic optimal feedback controller is employed to enhance an average sensitivity by regarding the variations as stochastic parameters. This method is applied to nanoscale receivers that detect transmitted binary data based on binary phase-shift keying in communication systems. The proposed method controls the vibrations of carbon nanotubes (CNTs) that serve as the antennas of the receiver. The proposed method is demonstrated via a numerical simulation using nanoscale receivers with the manufacturing variation. The simulation based on experimental data obtained from CNTs shows that the average performance of the devices is enhanced.

    DOI: 10.1109/ACCESS.2019.2955697

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  33. An interdigitated electrode with dense carbon nanotube forests on conductive supports for electrochemical biosensors

    Sugime Hisashi, Ushiyama Takuya, Nishimura Keita, Ohno Yutaka, Noda Suguru

    ANALYST   Vol. 143 ( 15 ) page: 3635 - 3642   2018.8

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/c8an00528a

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  34. Non-coherent detection of digitally phase-modulated signals with carbon nanotube cantilever vibration

    Tadokoro Y., Ohno Y., Tanaka H.

    ELECTRONICS LETTERS   Vol. 54 ( 13 ) page: 840 - +   2018.6

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    Towards the realisation of reliable communication systems using simple nanoscale transceivers, this Letter presents a method for the non-coherent detection of digitally phase-modulated signals. Without the synchronisation of the phases of the transmitted and received carrier signals, data transmission cannot be reliably achieved. To address this issue, the proposed method is developed using a nanoscale receiver that receives the binary phase-modulated signal through the mechanical vibration of a carbon nanotube cantilever. The present analysis reveals that this receiver has an interesting characteristic: the two decision statistics available in the receiver have a phase difference of p/2, which means that at least one of the statistics is fairly reliable regardless of the synchronisation error. Through the selection of the more reliable of the two statistics, the proposed method achieves low error in the estimation of the transmitted data even without carrier phase synchronisation. This Letter presents the derivation of the proposed rule for selecting the statistic and numerical results that demonstrate the effectiveness of the proposed method. This Letter is expected to contribute to the realisation of future communication applications using nanoscale transceivers.

    DOI: 10.1049/el.2018.0475

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  35. Detection of Digitally Phase-Modulated Signals Utilizing Mechanical Vibration of CNT Cantilever

    Tadokoro Yukihiro, Ohno Yutaka, Tanaka Hiroya

    IEEE TRANSACTIONS ON NANOTECHNOLOGY   Vol. 17 ( 1 ) page: 84 - 92   2018.1

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    DOI: 10.1109/TNANO.2017.2765310

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  36. Phase shifter tuned by varying the spring constant of a nanomechanical cantilever

    Tanaka H., Ozaki T., Ohno Y., Tadokoro Y.

    JOURNAL OF APPLIED PHYSICS   Vol. 122 ( 23 )   2017.12

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    This paper presents a theoretical study of an adaptive microwave phase shifter based on a nanomechanical resonator. The phase shifter can be tuned to provide an arbitrary phase rotation in the range between -90° and 90° by adjusting the bias voltage applied to the resonator. An analytical model is developed to reveal the underlying mechanism of the phase shifter. It is also analytically demonstrated that the operating frequency can be selected by adjusting the bias voltage. In addition, it is found that the bandwidth is tunable via the quality factor for the cantilever.

    DOI: 10.1063/1.4992040

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  37. Dry and Direct Deposition of Aerosol-Synthesized Single-Walled Carbon Nanotubes by Thermophoresis

    Laiho Patrik, Mustonen Kimmo, Ohno Yutaka, Maruyama Shigeo, Kauppinen Esko I.

    ACS APPLIED MATERIALS & INTERFACES   Vol. 9 ( 24 ) page: 20738 - 20747   2017.6

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    DOI: 10.1021/acsami.7b03151

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  38. Purification of 1.9-nm-diameter semiconducting single-wall carbon nanotubes by temperature-controlled gel-column chromatography and its application to thin-film transistor devices

    Thendie Boanerges, Omachi Haruka, Hirotani Jun, Ohno Yutaka, Miyata Yasumitsu, Shinohara Hisanori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 6 )   2017.6

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    DOI: 10.7567/JJAP.56.065102

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  39. Adaptive Control of Angular Sensitivity for VHF-Band Nano-Antenna Using CNT Mechanical Resonator

    Tanaka H., Ohno Y., Tadokoro Y.

    IEEE Transactions on Molecular, Biological, and Multi-Scale Communications   Vol. 3 ( 1 ) page: 24 - 32   2017.3

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    An adaptive control method of angular sensitivity for a VHF-band nano-antenna is presented. This antenna is composed of a single carbon nanotube cantilever immersed in a DC electric field. The behavior of the antenna is analytically described using a singly clamped metallic sphere model and the image charge method. We derive design guidelines for the direction and shape of angular sensitivity; the amplitude of the DC electric field is a key parameter for controlling the sensitivity. The analysis reveals that the most sensitive direction is tunable in the range of -π/2 to π/2. The shape of sensitivity can be manipulated to be omnidirectional or to correspond to a Hertzian-dipole-like antenna. This investigation is useful for adaptive control to suppress interference signals in nanoscale communication systems.

    DOI: 10.1109/TMBMC.2016.2640282

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  40. Angular Sensitivity Steering in CNT Electromagnetic Wave Detector

    Nobunaga Tatsuya, Tadokoro Yukihiro, Ohno Yutaka, Tanaka Hiroya

    IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS   Vol. 16   page: 1405 - 1408   2017

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    DOI: 10.1109/LAWP.2016.2640272

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  41. Origin of residual particles on transferred graphene grown by CVD Reviewed

    Yasunishi Tomohiro, Takabayashi Yuya, Kishimoto Shigeru, Kitaura Ryo, Shinohara Hisanori, Ohno Yutaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 55 ( 8 )   2016.8

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    DOI: 10.7567/JJAP.55.080305

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  42. Highly individual SWCNTs for high performance thin film electronics

    Kaskela Antti, Laiho Patrik, Fukaya Norihiro, Mustonen Kimmo, Susi Toma, Jiang Hua, Houbenov Nikolay, Ohno Yutaka, Kauppinen Esko I.

    CARBON   Vol. 103   page: 228 - 234   2016.7

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    We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Ω/sq. at 90% transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Ω/sq. at 97% transmittance - the highest reported for any carbon nanotube TCF - and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm2 V-1s-1 and ON/OFF-ratios up to 106.

    DOI: 10.1016/j.carbon.2016.02.099

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  43. Highly stable perovskite solar cells with an all-carbon hole transport layer

    Wang Feijiu, Endo Masaru, Mouri Shinichiro, Miyauchi Yuhei, Ohno Yutaka, Wakamiya Atsushi, Murata Yasujiro, Matsuda Kazunari

    NANOSCALE   Vol. 8 ( 23 ) page: 11882 - 11888   2016

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    Nano-carbon materials (carbon nanotubes, graphene, and graphene oxide) have potential application for photovoltaics because of their excellent optical and electronic properties. Here, we demonstrate that a single-walled carbon nanotubes/graphene oxide buffer layer greatly improves the photovoltaic performance of organo-lead iodide perovskite solar cells. The carbon nanotubes/graphene oxide buffer layer works as an efficient hole transport/electron blocking layer. The photovoltaic conversion efficiency of 13.3% was achieved in the organo-lead iodide perovskite solar cell due to the complementary properties of carbon nanotubes and graphene oxide. Furthermore, the great improvement of photovoltaic performance stability in the perovskite solar cells using carbon nanotubes/graphene oxide/polymethyl methacrylate was demonstrated in comparison with that using a typical organic hole transport layer of 2,2′,7,7′-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9′-spirobifluorene.

    DOI: 10.1039/c6nr01152g

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  44. Toward the Limits of Uniformity of Mixed Metallicity SWCNT TFT Arrays with Spark-Synthesized and Surface-Density-Controlled Nanotube Networks Reviewed

    Kaskela Antti, Mustonen Kimmo, Laiho Patrik, Ohno Yutaka, Kauppinen Esko I.

    ACS APPLIED MATERIALS & INTERFACES   Vol. 7 ( 51 ) page: 28134 - 28141   2015.12

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    DOI: 10.1021/acsami.5b10439

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  45. Angular Sensitivity of VHF-Band CNT Antenna Reviewed

    Tanaka Hiroya, Ohno Yutaka, Tadokoro Yukihiro

    IEEE TRANSACTIONS ON NANOTECHNOLOGY   Vol. 14 ( 6 ) page: 1112 - 1116   2015.11

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    DOI: 10.1109/TNANO.2015.2477813

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  46. Overcoming the quality-quantity tradeoff in dispersion and printing of carbon nanotubes by a repetitive dispersion-extraction process Reviewed

    Shirae Hiroyuki, Kim Dong Young, Hasegawa Kei, Takenobu Taishi, Ohno Yutaka, Noda Suguru

    CARBON   Vol. 91   page: 20 - 29   2015.9

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    DOI: 10.1016/j.carbon.2015.04.033

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  47. Printed, short-channel, top-gate carbon nanotube thin-film transistors on flexible plastic film

    Maeda Michihiko, Hirotani Jun, Matsui Ryotaro, Higuchi Kentaro, Kishimoto Shigeru, Tomura Takuya, Takesue Masafumi, Hata Katsuhiko, Ohno Yutaka

    APPLIED PHYSICS EXPRESS   Vol. 8 ( 4 )   2015.4

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    DOI: 10.7567/APEX.8.045102

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  48. Transparent, flexible all-carbon electron devices Reviewed

    OHNO Yutaka

    Oyo Buturi   Vol. 84 ( 2 ) page: 142 - 145   2015.2

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    <p>Carbon nanotube (CNT) thin films are rare materials with multi-functionality in addition to superior electric, optical and mechanical characteristics. This article introduces all-carbon devices having a semiconductor layer and electrodes, with wiring made of a CNT thin film. They are flexible and transparent as well as having the ability to be thermoformed into a variety of 3D shapes. Taking advantage of these characteristics allows the realization of unobservable devices or 3D or highly designable devices.</p>

    DOI: 10.11470/oubutsu.84.2_142

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  49. Electroluminescence from an Electrostatically Doped Carbon Nanotube Field-Effect Transistor

    Hughes M. A., Ohno Y., Mizutani T.

    NANOSCIENCE AND NANOTECHNOLOGY LETTERS   Vol. 6 ( 10 ) page: 881 - 886   2014.10

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    We report electroluminescence (EL) from a carbon nanotube field-effect transistor with split-gates. EL is generated by the electrostatic doping technique. Six EL bands could be observed, with the strongest band peaking between 0.867 and 0.850 eV with a full width at half maximum (FWHM) of 64 to 120 meV, depending on the bias conditions. From the EL peak position we estimate a CNT diameter of ∼ 1.05 nm. We also estimate the power and quantum efficiency of the EL to be around 1 × 10-6and 1 × 10-5 respectively. With a fixed drain voltage, increasing the opposite split gate bias caused the EL to increase monotonically from zero, indicating an ambipolar emission mechanism. With a fixed opposite split gate bias the dependence of EL on drain voltage displays a threshold. Drain current is significantly higher when using equal, rather than opposite split gate biases, which we attribute to the trapping of carries by band bending when using opposite split gate bias.

    DOI: 10.1166/nnl.2014.1831

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  50. Photocurrent from a carbon nanotube diode with split-gate and asymmetric contact geometry

    Hughes M. A., Homewood K. P., Curry R. J., Ohno Y., Mizutani T.

    MATERIALS RESEARCH EXPRESS   Vol. 1 ( 2 )   2014.6

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    We fabricated a Ti/Pd asymmetrically contacted single carbon nanotube (CNT) field-effect transistor (FET) with split-gates. Transfer characteristics can be explained if the Schottky barrier for electrons is lower at the Pd contact than it is at the Ti contact. Strong rectification is observed when the gates are unbiased, and the rectification direction can be inverted with the appropriate gate bias. When operated as an FET the device has an on/off ratio of 1 × 107. Under illumination, photocurrent can only be observed with opposite split-gate bias. Open circuit voltage (VOC) and short circuit current (ISC) increase with increasing opposite polarity split-gate bias, representing the first demonstration of the modulation of VOC and ISC in an asymmetric contact CNT FET.

    DOI: 10.1088/2053-1591/1/2/026304

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  51. Effect of ambient air on n-type carbon nanotube thin-film transistors chemically doped with poly(ethylene imine)

    Yasunishi Tomohiro, Kishimoto Shigeru, Ohno Yutaka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 53 ( 5 )   2014.5

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    DOI: 10.7567/JJAP.53.05FD01

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  52. Fabrication of Single-Walled Carbon Nanotube/Si Heterojunction Solar Cells with High Photovoltaic Performance

    Wang Feijiu, Kozawa Daichi, Miyauchi Yuhei, Hiraoka Kazushi, Mouri Shinichiro, Ohno Yutaka, Matsuda Kazunari

    ACS PHOTONICS   Vol. 1 ( 4 ) page: 360 - 364   2014.4

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    DOI: 10.1021/ph400133k

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  53. One-Step Sub-10 mu m patterning of Carbon-Nanotube Thin Films for Transparent Conductor Applications

    Fukaya Norihiro, Kim Dong Young, Kishimoto Shigeru, Noda Suguru, Ohno Yutaka

    ACS NANO   Vol. 8 ( 4 ) page: 3285 - 3293   2014.4

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    DOI: 10.1021/nn4041975

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  54. Split gate and asymmetric contact carbon nanotube optical devices

    Hughes M. A., Homewood K. P., Curry R. J., Ohno Y., Mizutani T.

    OPTICAL COMPONENTS AND MATERIALS XI   Vol. 8982   2014

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    Asymmetric contacts or split gate geometries can be used to obtain rectification, electroluminescence (EL) and photocurrent from carbon nanotube field effect transistors. Here, we report devices with both split gates and asymmetric contacts and show that device parameters can be optimised with an appropriate split gate bias, giving the ability to select the rectification direction, modify the reverse bias saturation current and the ideality factor. When operated as a photodiode, the short circuit current and open circuit voltage can be modified by the split gate bias, and the estimated power conversion efficiency was 1×10-6. When using split gates and symmetric contacts, strong EL peaking at 0.86 eV was observed with a full width at half maximum varying between 64 and 120 meV, depending on the bias configuration. The power and quantum efficiency of the EL was estimated to be around 1×10-6 and 1×10-5 respectively.

    DOI: 10.1117/12.2036962

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  55. True Nanoの世界:カーボンナノチューブ:特異な物性を活かした電子デバイス Reviewed

    大野 雄高

    パリティ   Vol. 29   page: 18 - 21   2014

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  56. Carbon nanotube-based thin-film transistors on plastic film

    Ohno Y.

    Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013     page: 243 - 246   2013.11

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    Among various kinds of semiconductor materials, carbon nanotubes can provide high-mobility, low-operation voltage, flexible devices on plastic films at low cost. High-mobility thin-film transistors (TFTs) and functional integrated circuits (ICs) have been fabricated by simple transfer process on a transparent plastic substrate. All-carbon ICs have also been realized for the first time, which has better transparency, flexibility, and stretchability. We also demonstrate high-throughput printing fabrication of high-mobility TFT arrays with flexographic printing technique. © 2013 JSAP.

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  57. An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry

    Hughes M. A., Homewood K. P., Curry R. J., Ohno Y., Mizutani T.

    APPLIED PHYSICS LETTERS   Vol. 103 ( 13 )   2013.9

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    A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10-16 A, and an ideality factor (η) of 1.38. When the gate above the Ti contact is biased negatively the diode inverts. When positive bias is then applied to the gate above the Pd contact minority carrier injection is suppressed. Configured such I0 and η were 2 × 10-14 A and 2.01, respectively. Electrical characterization indicates that the Schottky barrier height for electrons is lower for the Pd contact than the Ti contact. © 2013 AIP Publishing LLC.

    DOI: 10.1063/1.4823602

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  58. High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques

    Higuchi Kentaro, Kishimoto Shigeru, Nakajima Yuta, Tomura Takuya, Takesue Masafumi, Hata Katsuhiko, Kauppinen Esko I., Ohno Yutaka

    APPLIED PHYSICS EXPRESS   Vol. 6 ( 8 )   2013.8

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    A lack of high-mobility transistors has been one of the most crucial challenges facing the development of printable electronics. In this work, we report on the fabrication of high-mobility carbon nanotube thin-film transistors using a combination of transfer and high-speed flexographic printing techniques. Based on lithography-free nonvacuum processes, a high mobility of 157 cm2 V-1 s-1 with an ON/OFF ratio of 104 was achieved. Our ambient fabrication technique provides not only a promising platform for printed flexible devices but also demonstrates the realistic potential of low-cost manufacturing technology. © 2013 The Japan Society of Applied Physics.

    DOI: 10.7567/APEX.6.085101

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  59. Mouldable all-carbon integrated circuits

    Sun Dong-Ming, Timmermans Marina Y., Kaskela Antti, Nasibulin Albert G., Kishimoto Shigeru, Mizutani Takashi, Kauppinen Esko I., Ohno Yutaka

    NATURE COMMUNICATIONS   Vol. 4   page: 2302   2013.8

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    A variety of plastic products, ranging from those for daily necessities to electronics products and medical devices, are produced by moulding techniques. The incorporation of electronic circuits into various plastic products is limited by the brittle nature of silicon wafers. Here we report mouldable integrated circuits for the first time. The devices are composed entirely of carbon-based materials, that is, their active channels and passive elements are all fabricated from stretchable and thermostable assemblies of carbon nanotubes, with plastic polymer dielectric layers and substrates. The all-carbon thin-film transistors exhibit a mobility of 1,027 cm 2 V -1 s -1 and an ON/OFF ratio of 10 5. The devices also exhibit extreme biaxial stretchability of up to 18% when subjected to thermopressure forming. We demonstrate functional integrated circuits that can be moulded into a three-dimensional dome. Such mouldable electronics open new possibilities by allowing for the addition of electronic/plastic-like functionalities to plastic/electronic products, improving their designability. © 2013 Macmillan Publishers Limited.

    DOI: 10.1038/ncomms3302

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  60. Spatially Resolved Transport Properties of Pristine and Doped Single-Walled Carbon Nanotube Networks

    Znidarsic Andrej, Kaskela Antti, Laiho Patrik, Gaberscek Miran, Ohno Yutaka, Nasibulin Albert G., Kauppinen Esko I., Hassanien Abdou

    JOURNAL OF PHYSICAL CHEMISTRY C   Vol. 117 ( 25 ) page: 13324 - 13330   2013.6

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    We use noninvasive atomic force microscopy to probe the spatial electrical conductivity of isolated junctions of pristine and nitric acid treated single-walled carbon nanotube networks (SWCNT-N). By analyzing the local IV curves of SWCNTs and bundles with various diameters, the resistance per unit length and the contact resistance of their junctions are estimated to be 3-16 kΩ/μm and 29-532 kΩ, respectively. We find that the contact resistance decreases with increasing SWCNT or bundle diameter and depends on the contact morphology, reaching a value of 29 kΩ at a diameter of 10 nm. A nitric acid treatment moderately dopes SWCNTs and reduces their average contact resistance by a factor of 3 while the resistance of the nanotubes remains largely unaltered. Remarkably, the same treatment on an SWCNT-N shows similar reduction in the sheet resistance by a factor of 4. These results suggest that the resistance reduction mechanism is related to the contact modulation with no major impact on conductance of SWCNTs. © 2013 American Chemical Society.

    DOI: 10.1021/jp403983y

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  61. Investigation of Interface Charges of High-k Gate Dielectrics and Their Effects on Carbon Nanotube Field-Effect Transistors

    Suzuki Kosuke, Ohno Yutaka, Kishimoto Shigeru, Mizutani Takashi

    APPLIED PHYSICS EXPRESS   Vol. 6 ( 2 )   2013.2

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    We have investigated the interface charges generated at the interfaces of the high-k gate insulator by Kelvin probe force microscopy, as well as their effects on the properties of carbon nanotube field-effect transistors (CNFETs). It was found that positive charges are concentrated near the interfaces of the gate insulator with Au electrodes and a SiO2 substrate. The device simulation results show that the charges at the interfaces of the gate insulator with the Au electrodes are responsible for the change in the polarity of the conduction carriers in the CNFETs. Copyright © 2013 The Japan Society of Applied Physics.

    DOI: 10.7567/APEX.6.024002

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  62. Carbon nanotube-based thin-film transistors on plastic film

    Ohno Yutaka

    PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS     page: 243 - 246   2013

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  63. Fabrication of high-mobility n-type carbon nanotube thin-film transistors on plastic film

    Yasunishi Tomohiro, Kishimoto Shigeru, Kauppinen Esko I., Ohno Yutaka

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11   Vol. 10 ( 11 ) page: 1612 - 1615   2013

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    We fabricated flexible n -type carbon nanotube thin-film transistors on a plastic film by a simple transfer process and a solution-based chemical doping technique with polyethyleneimine (PEI). There exists an optimal PEI concentration, which is determined by doping level and charge accumulation in the PEI layer. A high electron mobility of 70 cm2/Vs was achieved with an on/off ratio of 105 in ambient air. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

    DOI: 10.1002/pssc.201300231

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  64. カーボンナノチューブ薄膜のフレキシブルエレクトロニクス応用

    大野 雄高

    バンドーテクニカルレポート(特別寄稿)   Vol. 17   page: 41680   2013

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  65. Effect of Air on Metal Contact of Carbon Nanotube Field-Effect Transistors

    Ishii Satoshi, Kishimoto Shigeru, Ohno Yutaka, Mizutani Takashi

    Materia Japan   Vol. 52 ( 6 ) page: 266 - 272   2013

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    DOI: 10.2320/materia.52.266

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  66. Electrical properties of the graphitic carbon contacts on carbon nanotube field effect transistors

    Tamaoki Masato, Kishimoto Shigeru, Ohno Yutaka, Mizutani Takashi

    APPLIED PHYSICS LETTERS   Vol. 101 ( 3 )   2012.7

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    Carbon nanotube field effect transistors (CNT-FETs) with graphitic carbon (G-C) contacts were fabricated and the electrical properties of the G-C contacts were studied. The CNT-FETs showed p-type conduction in air. However, the conduction type has changed to ambipolar in vacuum after annealing at 200 °C. This suggests that the p-type conduction in air is attributed to the adsorbed oxygen. The barrier heights at the G-C/CNT contacts in vacuum were ∼400 meV for electrons and ∼310 meV for holes. These values suggest that the Fermi level of G-C contacts is located at slightly below the midgap of the CNTs in vacuum. © 2012 American Institute of Physics.

    DOI: 10.1063/1.4737169

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  67. Effect of Carbon Nanotube Network Morphology on Thin Film Transistor Performance

    Timmermans Marina Y., Estrada David, Nasibulin Albert G., Wood Joshua D., Behnam Ashkan, Sun Dong-ming, Ohno Yutaka, Lyding Joseph W., Hassanien Abdou, Pop Eric, Kauppinen Esko I.

    NANO RESEARCH   Vol. 5 ( 5 ) page: 307 - 319   2012.5

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    The properties of electronic devices based on carbon nanotube networks (CNTNs) depend on the carbon nanotube (CNT) deposition method used, which can yield a range of network morphologies. Here, we synthesize single-walled CNTs using an aerosol (floating catalyst) chemical vapor deposition process and deposit CNTs at room temperature onto substrates as random networks with various morphologies. We use four CNT deposition techniques: electrostatic or thermal precipitation, and filtration through a filter followed by press transfer or dissolving the filter. We study the mobility using pulsed measurements to avoid hysteresis, the on/off ratio, and the electrical noise properties of the CNTNs, and correlate them to the network morphology through careful imaging. Among the four deposition methods thermal precipitation is found to be a novel approach to prepare high-performance, partially aligned CNTNs that are dry-deposited directly after their synthesis. Our results provide new insight into the role of the network morphologies and offer paths towards tunable transport properties in CNT thin film transistors. © 2012 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

    DOI: 10.1007/s12274-012-0211-8

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  68. Estimation of Height of Barrier Formed in Metallic Carbon Nanotube

    Okigawa Yuki, Ohno Yutaka, Kishimoto Shigeru, Mizutani Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 51 ( 2 )   2012.2

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    We have estimated the height of barriers against carriers formed in the metallic carbon nanotube (m-CNT) grown by plasma-enhanced chemical vapor deposition. The result shows that the heights of the barriers against both electrons and holes are about 300 meV. The existence of the barrier in the m-CNT was confirmed by local current modulation using scanning gate microscopy and by the potential drop obtained by Kelvin probe force microscopy. © 2012 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.51.02BN01

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  69. Observation of n-Type Conduction in Carbon Nanotube Field-Effect Transistors with Au Contacts in Vacuum

    Imaeda Hideki, Ishii Satoshi, Kishimoto Shigeru, Ohno Yutaka, Mizutani Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 51 ( 2 )   2012.2

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    The change in the conduction type of carbon nanotube field-effect transistors (CNT-FETs) with Au contacts from p-type to n-type by annealing in vacuum was observed. The result was explained by the local work function change of the Au contacts based on the measurement of the surface potential of the Au/CNT contact by Kelvin probe force microscopy (KFM). This work function change became prominent due to the desorption of oxygen by annealing. The degree of the conduction-type change was found to be dependent on the devices. The CNT-FETs with small OFF current showed clear conduction-type change. However, the devices with large OFF current did not show clear conduction-type change. This device dependent behavior was explained by the energy gap difference among devices, in which suppression of OFF current is not sufficient for the devices with thick CNTs with small bandgap. © 2012 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.51.02BN06

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  70. Air-Free Fabrication and Investigation of Effect of Air Exposure on Carbon Nanotube Field-Effect Transistors

    Ishii Satoshi, Kishimoto Shigeru, Ohno Yutaka, Mizutani Takashi

    MATERIALS EXPRESS   Vol. 1 ( 4 ) page: 285 - 290   2011.12

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    An air-free system which enables experiments from carbon nanotube (CNT) growth to device characterization without an effect of ambient air was constructed. It was clarified by using the system that an origin of instability of n-type conduction of carbon nanotube field-effect transistors (CNTFETs) with Al contacts in air was not attributed to oxidation of the Al contacts, but attributed to adsorption of oxygen. The present system was shown to be useful for investigating the effect of air on intrinsic electrical properties of CNTFETs with Al contacts, investigating the effect of passivation, and fabricating CNT p-n junction with Au(p)/Al(n) asymmetric electrodes. © 2011 by American Scientific Publishers.

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  71. Length-Sorted Semiconducting Carbon Nanotubes for High-Mobility Thin Film Transistors

    Miyata Yasumitsu, Shiozawa Kazunari, Asada Yuki, Ohno Yutaka, Kitaura Ryo, Mizutani Takashi, Shinohara Hisanori

    NANO RESEARCH   Vol. 4 ( 10 ) page: 963 - 970   2011.10

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    We have developed a process for chemical purification of carbon nanotubes for solution-processable thin-film transistors (TFTs) having high mobility. Films of the purified carbon nanotubes fabricated by simple drop coating showed carrier mobilities as high as 164 cm2V-1s-1, normalized transconductances of 0.78 Sm-1, and on/off current ratios of 106. Such high performance requires the preparation of a suspension of micrometer-long and highly purified semiconducting single-walled carbon nanotubes (SWCNTs). Our purification process includes length and electronic-type selective trapping of SWCNTs using recycling gel filtration with a mixture of surfactants. The results provide an important milestone toward printed high-speed and large-area electronics with roll-to-roll and ink-jet device fabrication. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

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  72. Carbon nanotubes for VLSI: Interconnect and transistor applications

    Awano Y., Sato S., Nihei M., Sakai T., Ohno Y., Mizutani T.

    International Symposium on VLSI Technology, Systems, and Applications, Proceedings     page: 10 - 11   2011.7

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    We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized. © 2011 IEEE.

    DOI: 10.1109/VTSA.2011.5872210

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  73. Electrical properties of carbon nanotube thin-film transistors fabricated using plasma-enhanced chemical vapor deposition measured by scanning probe microscopy

    Okigawa Yuki, Kishimoto Shigeru, Ohno Yutaka, Mizutani Takashi

    NANOTECHNOLOGY   Vol. 22 ( 19 ) page: 195202   2011.5

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    The electrical properties of carbon nanotube thin-film transistors (CNT-FETs) fabricated using plasma-enhanced chemical vapor deposition (PECVD) were studied by scanning probe microscopy. The measured results suggest the formation of an island structure in the subthreshold regime and the disappearance of the island structure at the ON state. These results were explained by the change in the effective number of CNTs that contributed to the electrical conduction due to the gate-bias-dependent resistance of the semiconducting CNTs. The results obtained by Monte Carlo simulation revealed similar results. The effects of metallic CNTs with defects and the scatter of the drain current in the subthreshold regime were also examined. © 2011 IOP Publishing Ltd.

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  74. Flexible high-performance carbon nanotube integrated circuits

    Sun Dong-ming, Timmermans Marina Y., Tian Ying, Nasibulin Albert G., Kauppinen Esko I., Kishimoto Shigeru, Mizutani Takashi, Ohno Yutaka

    NATURE NANOTECHNOLOGY   Vol. 6 ( 3 ) page: 156 - 161   2011.3

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    Carbon nanotube thin-film transistors are expected to enable the fabrication of high-performance, flexible and transparent devices using relatively simple techniques. However, as-grown nanotube networks usually contain both metallic and semiconducting nanotubes, which leads to a trade-off between charge-carrier mobility (which increases with greater metallic tube content) and on/off ratio (which decreases). Many approaches to separating metallic nanotubes from semiconducting nanotubes have been investigated, but most lead to contamination and shortening of the nanotubes, thus reducing performance. Here, we report the fabrication of high-performance thin-film transistors and integrated circuits on flexible and transparent substrates using floating-catalyst chemical vapour deposition followed by a simple gas-phase filtration and transfer process. The resulting nanotube network has a well-controlled density and a unique morphology, consisting of long (∼10 μm) nanotubes connected by low-resistance Y-shaped junctions. The transistors simultaneously demonstrate a mobility of 35 cm 2 V-1 s-1 and an on/off ratio of 6 × 106. We also demonstrate flexible integrated circuits, including a 21-stage ring oscillator and master-slave delay flip-flops that are capable of sequential logic. Our fabrication procedure should prove to be scalable, for example, by using high-throughput printing techniques. © 2011 Macmillan Publishers Limited. All rights reserved.

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  75. Thin-Film Transistors with Length-Sorted DNA-Wrapped Single-Wall Carbon Nanotubes

    Asada Yuki, Miyata Yasumitsu, Shiozawa Kazunari, Ohno Yutaka, Kitaura Ryo, Mizutani Takashi, Shinohara Hisanori

    JOURNAL OF PHYSICAL CHEMISTRY C   Vol. 115 ( 1 ) page: 270 - 273   2011.1

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    The present experimental study provides a detailed characterization of the single-wall carbon nanotube (SWNT) length effect on the device characteristics of DNA-wrapped SWNT-network thin-film transistors (TFTs). DNA-assisted dispersion and length separation by high-performance liquid chromatography are used to prepare the SWNTs with average lengths of 400 and 200 nm. The TFTs of both SWNTs exhibit high on/off current ratios of 104-106 and mobilities of 0.4-1.3 cm2/(V s) by optimizing the film density of SWNTs. The optimized density of 200 nm SWNTs is found to be higher than that of 400 nm SWNTs as expected by the percolation theory of two-dimensional random networks, where shorter length SWNTs can maintain high on current despite increasing in the number of SWNT junctions. The present result is an important indicator for realizing high-performance TFTs constructed from SWNTs having desired length. © 2010 American Chemical Society.

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  76. Thin Single-Walled Carbon Nanotubes with Narrow Diameter Distribution Grown by Cold-Wall Chemical Vapor Deposition Combined with Co Nanoparticle Deposition

    Ishii Satoshi, Ohno Yutaka, Kishimoto Shigeru, Mizutani Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 50 ( 1 )   2011.1

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    We have grown thin single-walled carbon nanotubes (SWNTs) with a narrow diameter distribution using the arc-discharge plasma (ADP) technique for Co catalyst metal deposition and a cold-wall chemical vapor deposition (CVD) system for SWNT growth. The diameters of the SWNTs ranged from 0.79 to 1.07 nm. In addition to depositing small and uniform-sized metal catalyst nanoparticles by the ADP technique, decreasing the growth temperature using the cold-wall CVD system seemed to suppress the aggregation of the metal catalyst nanoparitcles leading to SWNTs with small diameters of narrow distribution. © 2011 The Japan Society of Applied Physics.

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  77. Impact of fixed charges at interfaces on the operation of top-gate carbon nanotube field-effect transistors

    Ohno Yutaka, Moriyama Naoki, Kishimoto Shigeru, Mizutani Takashi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2   Vol. 8 ( 2 ) page: 567 - 569   2011

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    To control the properties of carbon nanotube field-effect transistors (CNFETs), it is important to understand the properties of various interfaces in the devices and their effects on device characteristics. Here, we studied the influence of interface fixed charges introduced between the gate insulator and the substrate on the operation of a top-gate CNFET, using device simulation. The simulation results suggest that with the existence of interface charges, the current modulation mechanism of the CNFET changes from Schottky barrier modulation to channel potential modulation. The minority carrier injection in the OFF state is suppressed by the high-potential region formed near the contact electrodes by the interface charges. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

    DOI: 10.1002/pssc.201000571

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  78. Improvement in alignment of single-walled carbon nanotubes grown on quartz substrate

    Hata Kensuke, Ohno Yutaka, Kishimoto Shigeru, Mizutani Takashi

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2   Vol. 8 ( 2 ) page: 561 - 563   2011

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    Aligned growth of single-walled carbon nanotubes (SWNTs), which can be realized on a quartz substrate, is important for electron device applications such as high-frequency transistors. In order to improve the alignment of the SWNTs, we studied pretreatments of the substrate before SWNT growth. When the surface of the quartz substrate was etched using hydrofluoric acid, the alignment and linearity of the grown SWNTs improved. This suggests that it is important to remove the uppermost layer on the surface of as-received substrates, which is damaged due to the polishing process. We also studied an etching process to remove the damaged layer without increasing surface roughness. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

    DOI: 10.1002/pssc.201000551

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  79. Carbon Nanotubes for VLSI: Interconnect and Transistor Applications

    Awano Yuji, Sato Shintaro, Nihei Mizuhisa, Sakai Tadashi, Ohno Yutaka, Mizutani Takashi

    PROCEEDINGS OF THE IEEE   Vol. 98 ( 12 ) page: 2015 - 2031   2010.12

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    Carbon nanotubes (CNTs) offer unique properties such as the highest current density, ballistic transport, ultrahigh thermal conductivity, and extremely high mechanical strength. Because of these remarkable properties, they have been expected for use as wiring materials and as alternate channel materials for extending complementary metal oxide semiconductor (CMOS) performance in future very large scale integration (VLSI) technologies. In this paper, we report the present status of CNT growth technologies and the applications for via interconnects (vertical wiring) and field-effect transistors (FETs). We fabricated CNT via and evaluated its robustness over a high-density current. In our technology, multiwalled carbon nanotubes (MWNTs) were successfully grown at temperatures as low as 365 C using Co catalyst nanoparticles, which were formed and deposited by a custom-designed particle generation and deposition system. The density of MWNTs grown at 450 C reaches more than MWNTs were grown in via holes with a diameter as small as 40 nm. The resistance of CNT vias with a diameter of 160 nm was found to be of the same order as that of tungsten plugs. The CNT via was able to sustain a current density as high as at 105 C for 100 h without any deterioration in its properties. We propose a Si-process compatible technique to control carrier polarity of CNFETs by utilizing fixed charges introduced by the gate oxide. High-performance - and type CNFETs and CMOS inverters with stability in air have been realized. © 2006 IEEE.

    DOI: 10.1109/JPROC.2010.2068030

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  80. Electrical breakdown of individual Si nanochains and silicide nanochains.

    Kohno H, Nogami T, Takeda S, Ohno Y, Yonenaga I, Ichikawa S

    Journal of nanoscience and nanotechnology   Vol. 10 ( 10 ) page: 6655 - 8   2010.10

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    DOI: 10.1166/jnn.2010.3144

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  81. High-Performance Thin-Film Transistors with DNA-Assisted Solution Processing of Isolated Single-Walled Carbon Nanotubes

    Asada Yuki, Miyata Yasumitsu, Ohno Yutaka, Kitaura Ryo, Sugai Toshiki, Mizutani Takashi, Shinohara Hisanori

    ADVANCED MATERIALS   Vol. 22 ( 24 ) page: 2698 - +   2010.6

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    [Figure Presented] Controlling the morphology of single-walled carbon nanotubes (SWNTs) is essential to realize their excellent device characteristics in electronics. DNA-wrapped SWNTs provides an effective, scalable way to fabricate the super-uniform networks of highly isolated, structure-sorted SWNTs for thin-film transistors (TFTs). The DNASWNTs are easily formed into uniform, desired-density networks of individual nanotubes. © 2010 WILEY-VCH Verlag GmbH &, Co. KCaA, Weinheim.

    DOI: 10.1002/adma.200904006

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  82. Fabrication Process of Carbon Nanotube Field Effect Transistors Using Atomic Layer Deposition Passivation for Biosensors

    Nakashima Yasuhiro, Ohno Yutaka, Kishimoto Shigeru, Okochi Mina, Honda Hiroyuki, Mizutani Takashi

    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   Vol. 10 ( 6 ) page: 3805 - 3809   2010.6

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    Fabrication process of the carbon nanotube (CNT) field effect transistors (FETs) for biosensors was studied. Atomic layer deposition (ALD) of HfO 2 was applied to the deposition of the passivation/gate insulator film. The CNT-FETs did not show the drain current degradation after ALD passivation even though the passivation by Si 3N 4 deposited by plasma-enhanced chemical vapor deposition (PECVD) resulted in a significant drain current decrease. This indicates the advantage of the present ALD technique in terms of the damage suppression. The biosensing operation was confirmed using thus fabricated CNT-FETs. Copyright © 2010 American Scientific Publishers All rights reserved.

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  83. Thin film transistors using PECVD-grown carbon nanotubes

    Ono Yuki, Kishimoto Shigeru, Ohno Yutaka, Mizutani Takashi

    NANOTECHNOLOGY   Vol. 21 ( 20 ) page: 205202   2010.5

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    Thin film transistors with a carbon nanotube(CNT) network as a channel have been fabricated using grid-inserted plasma-enhanced chemical vapor deposition(PECVD) which has the advantage of preferential growth of the CNTs with semiconducting behavior in the I-V characteristics of CNT field effect transistors (CNT-FETs). Taking advantage of the preferential growth and suppression of bundle formation, a large ON current of 170 μ Amm -1, which is among the largest in these kinds of devices with a large ON/OFF current ratio of about 105, has been realized in the relatively short channel length of 10μm. The field effect mobility of the device was 5.8cm2V-1s-1. © 2010 IOP Publishing Ltd.

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  84. Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges

    Moriyama N., Ohno Y., Kitamura T., Kishimoto S., Mizutani T.

    NANOTECHNOLOGY   Vol. 21 ( 16 )   2010.4

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    We study the phenomenon of change in carrier type in carbon nanotube field-effect transistors (CNFETs) caused by the atomic layer deposition (ALD) of a HfO2 gate insulator. When a HfO2 layer is deposited on a CNFET, the type of carrier changes from p-type to n-type. The so-obtained n-type device has good performance and stability in air. The conductivity of such a device with a channel length of 0.7νm is 11% of the quantum conductance 4e2/h. The contact resistance for electron current is estimated to be 14 kΩ. The n-type conduction of this CNFET is maintained for more than 100 days. The change in carrier type is attributed to positive fixed charges introduced at the interface between the HfO2 and SiO2 layers. We also propose a novel technique to control the type of conduction by utilizing interface fixed charges; this technique is compatible with Si CMOS process technology. © 2010 IOP Publishing Ltd.

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  85. Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy

    Okigawa Yuki, Kishimoto Shigeru, Ohno Yutaka, Mizutani Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 49 ( 2 )   2010

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    Electrical properties of a carbon nanotube field-effect transistor (CNT-FET) with multiple CNT channels were studied by scanning gate microscopy (SGM), in which the scanning probe tip was used as a local gate. It was possible to distinguish the difference in electrical properties of individual CNT channels by SGM. Spot like SGM images were attributed to the barrier against carriers formed in the metallic CNT, resulting in a current modulation of the CNT-FET. It has also been shown that the barrier in the metallic CNT results in an ambipolar behavior of the CNTFETs. © 2010 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.49.02BD02

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  86. Environmental effects on photoluminescence of single-walled carbon nanotubes

    Ohno Yutaka, Maruyama Shigeo, Mizutani Takashi

    CARBON NANOTUBES     page: 109 - 121   2010

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  87. High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges

    Moriyama Naoki, Ohno Yutaka, Suzuki Kosuke, Kishimoto Shigeru, Mizutani Takashi

    APPLIED PHYSICS EXPRESS   Vol. 3 ( 10 )   2010

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    We have realized high-performance p- and n-type top-gate carbon nanotube field-effect transistors (CNFETs) by controlling the charges introduced at the interface between the gate insulator and the substrate. We also fabricated a complementary metal-oxide-semiconductor (CMOS) inverter on an individual single-walled carbon nanotube (SWNT). This CMOS inverter exhibited a high voltage gain of 26 and a large noise margin of ̃70% of Vdd=2. The proposed technique provides air-stable and high-performance carbon nanotube CMOS devices that are compatible with the Si CMOS process. The effects of interface charges on the mechanisms of CNFET operation have also been investigated on the basis of potential calculations. © 2010 The Japan Society of Applied Physics.

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  88. Medium Scale Integrated Circuits Using Carbon Nanotube Thin Film Transistors

    Mizutani Takashi, Okigawa Yuki, Ono Yuki, Kishimoto Shigeru, Ohno Yutaka

    APPLIED PHYSICS EXPRESS   Vol. 3 ( 11 )   2010

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    Medium scale integrated circuits with more than 100 carbon nanotube (CNT) thin-film transistors (TFTs) have been successfully fabricated. These are the largest CNT-based integrated circuits reported so far. Our fabrication technology features a buried back-gate architecture made by CNT growth using plasma-enhanced chemical vapor deposition, chemical doping and enhancement/depletion mode logic gates. High-speed operation with a switching time of 0.51 μs/gate demonstrated by a 53-stage ring oscillator, which has about two orders of magnitude higher switching speed than previous TFT integrated circuits, confirms the suitability of the present TFT technology for implementing CNT-TFT integrated circuits with various functions. © 2010 The Japan Society of Applied Physics.

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  89. Carrier type conversion in carbon nanotube field-effect transistors caused by interface fixed charges

    Ohno Y., Moriyama N., Kitamura T., Suzuki K., Kishimoto S., Mizutani T.

    2009 International Semiconductor Device Research Symposium, ISDRS '09     2009.12

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    DOI: 10.1109/ISDRS.2009.5378006

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  90. A study of preferential growth of carbon nanotubes with semiconducting behavior grown by plasma-enhanced chemical vapor deposition

    Mizutani Takashi, Ohnaka Hirofumi, Okigawa Yuki, Kishimoto Shigeru, Ohno Yutaka

    JOURNAL OF APPLIED PHYSICS   Vol. 106 ( 7 )   2009.10

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    The electrical properties of carbon nanotubes (CNTs) grown by plasma-enhanced chemical vapor deposition (PECVD) have been studied by measuring the I-V characteristics of many CNT-field effect transistors. The ratio of modulation current to total current was as high as 97%, with a small nondepletable OFF current component. This suggests that CNTs with semiconducting behavior were preferentially grown in the PECVD process. Raman scattering spectroscopy of the PECVD-grown CNTs, however, revealed several peaks of the radial breezing mode, which correspond to the presence of metallic CNTs. Scanning gate microscopy measurement of the CNT-FET with an ON/OFF ratio of 100 revealed the existence of a potential barrier in the metallic CNTs. These results suggest that observation of the preferential growth of CNTs with semiconducting behavior in the CNT-FETs fabricated via the present PECVD process results from the opening of the band gap due to defects caused by irradiation damage during the PECVD growth. © 2009 American Institute of Physics.

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  91. Is vacuum annealing converts p-type single wall carbon nanotube field effect transistor (in air) to n-type (in vacuum) is universally true (?)

    Somani P., Kobayashi A., Ohno Y., Kishimoto S., Mizutani T.

    Carbon - Science and Technology   Vol. 2 ( 2 ) page: 98 - 102   2009.7

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    Our study on nickel silicide and gold contacted single-wall-carbon-nanotube field effect transistors (SWCN-FETs) is in sharp contrast to earlier published reports of type conversion in SWCN-FETs (from p- to n-) when cycled between air and vacuum, and indicates that (1) band gap of SWCN (2) the extent to which Fermi level of the metal contact gets shifted due to adsorption/desorption of oxygen and (3) relative position of the Fermi level of the metal contact with respect to the top of the valance band of SWCN (in an oxygen-free environment) are some of the important factors that governs such phenomena. © Applied Science Innovations Pvt. Ltd., India.

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  92. Electrical properties of carbon nanotube FETs

    Mizutani T., Ohno Y., Kishimoto S.

    ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems     page: 1 - 8   2008.12

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    The electrical properties of carbon nanotube FETs (CNTFETs) have been studied in detail. The conduction type of the CNTFETs was dependent on the work function of the contact metal, which suggests that Fermi level pinning at the metal/nanotube interface is not strong. Chemical doping using F4TCNQ was found to be effective in reducing not only the channel resistance but also the contact resistance. In the CNTFETs fabricated using PECVD-grown nanotubes, the drain current of the most of the devices could be modulated by the gate voltage with small OFF current suggesting the preferential growth of the nanotubes with semiconducting behavior. Multichannel top-gate CNTFETs with horizontally-aligned nanotubes have been successfully fabricated using CNT growth on the ST-cut quartz substrate. CNTFETs with nanotube network have also been fabricated by using grid-inserted PECVD and catalysts formed on the channel area of the FETs. The uniformity of the electrical properties of the network channel CNTFETs was very good. © 2008 IEEE.

    DOI: 10.1109/ASDAM.2008.4743290

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  93. Electrical properties of carbon nanotube FETs

    Mizutani T., Ohno Y., Kishimoto S.

    Proceedings of SPIE - The International Society for Optical Engineering   Vol. 7037   2008.11

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    The electrical properties of carbon nanotube FETs (CNTFETs) have been studied in detail. The conduction type of the CNTFETs was dependent on the work function of the contact metal, which suggests that Fermi level pinning at the metal/nanotube interface is not strong. Based on the two-probe and four-probe resistance measurements, it has been shown that the carrier transport at the contact is explained by the edge contact model even in the diffusive regime. The chemical doping using F4TCNQ was effective in reducing not only the channel resistance but also the contact resistance. In the CNTFETs fabricated using plasma-enhanced (PE) CVD-grown nanotubes, the drain current of the most of the devices could be modulated by the gate voltage with small OFF current suggesting the preferential growth of the nanotubes with semiconducting behavior. Multichannel top-gate CNTFETs with horizontally-aligned nanotubes as channels have been successfully fabricated using CNT growth on the ST-cut quartz substrate, arc-discharge plasma deposition of the catalyst metal, and ALD gate insulator deposition. The devices show normally-on and n-type conduction property with a relatively-high ON current of 13 mA/mm. CNTFETs with nanotube network have also been fabricated by direct growth on the SiO2/Si substrate using grid-inserted PECVD and using catalyst formed on the channel area of the FETs. The uniformity of the electrical properties of the network channel CNTFETs were very good. Finally, it has been shown that the surface potential profile measurement based on the electrostatic force detection in the scanning probe microscopy was effective in studying the behavior of the CNTFETs such as the transient behavior and the effect of the defects.

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  94. High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method

    Phokharatkul D., Ohno Y., Nakano H., Kishimoto S., Mizutani T.

    APPLIED PHYSICS LETTERS   Vol. 93 ( 5 )   2008.8

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    High-density horizontally aligned single-walled carbon nanotubes are grown on a quartz substrate using Co nanoparticles deposited by arc-discharge plasma method. The Co nanoparticles with a density as high as 6.0× 1010 cm-2 are formed by a single pulse of arc discharge at room temperature. The density of the aligned nanotubes is ∼8 μ m-1 in average. Multichannel nanotube field-effect transistors with a high- k top-gate structure are fabricated with aligned nanotubes. The devices show high-performance, normally on, and n -type conduction property without any doping process. A high on current of 1.3 mA and a large transconductance of 0.23 mS for a channel width of 100 μm are obtained. The normally on and n -type property is attributed to fixed positive charges in the Hf O2 gate insulator and at the interfaces. © 2008 American Institute of Physics.

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  95. Fabrication of carbon nanotubes by slot-excited microwave plasma-enhanced chemical vapor deposition

    Il Shim Gyu, Kojima Yoshihiro, Kono Satoshi, Ohno Yutaka, Ishijima Tatsuo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 47 ( 7 ) page: 5652 - 5655   2008.7

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    Carbon nanotubes (CNTs) are fabricated by adopting plasma-enhanced chemical vapor deposition (PECVD) with a planar microwave plasma source. Plasma is produced by a slot antenna at 2.45-GHz microwave injection in CH 4/H2 mixture. In this study, it is shown that avoiding the exposure of the substrate to the plasma drastically improves the CNT growth. Furthermore, it is found that the CNT quality can be controlled with the optimization of one of the steps in the catalyst treatment, such as the preheating procedure; the treated catalyst is considered to be unaffected by the heating in the high-density microwave plasma treatment during the CNT growth. © 2008 The Japan Society of Applied Physics.

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  96. Photoluminescence in carbon nanotubes : exciton transitions and environmental effects Reviewed

    OHNO Yutaka

    Oyo Buturi   Vol. 77 ( 6 ) page: 656 - 661   2008.6

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    <p>Carbon nanotubes are promising materials for various applications from electron devices to medical equipment. It is necessary to establish a characterization method for the nanotube materials as well as large scale synthesis technique for stable quality. Photoluminescence (PL) spectroscopy of carbon nanotubes is an important technique in addition to Raman scattering spectroscopy for characterizing nanotube materials. Since the optical properties of nanotubes are strongly affected by environmental conditions around them, it is necessary to understand the environmental effects to establish PL spectroscopy as a useful characterization tool. The environmental effects are mainly caused by the dielectric screening of inter-carrier Coulomb interactions. In addition, mechanical interactions with surrounding materials and the interfacial properties are also involved. Utilizing its sensitivity to the environment, PL is also of interest as a nano-scale sensing tool.</p>

    DOI: 10.11470/oubutsu.77.6_656

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  97. Electrical properties of carbon nanotube FETs

    Mizutani T., Nosho Y., Ohno Y.

    Journal of Physics: Conference Series   Vol. 109 ( 1 )   2008.3

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    Language:Japanese   Publisher:Journal of Physics: Conference Series  

    The electrical properties of carbon nanotube FETs (CNTFETs) have been studied in detail. The conduction type of the CNTFETs was dependent on the work function of the contact metal, which suggests that Fermi level pinning at the metal/nanotube interface does not happen. Based on the two-probe and four-probe resistance measurements, it was shown that the carrier transport at the contact is explained by the edge contact model even in the diffusive regime. The chemical doping using F4TCNQ was effective to reduce not only the channel resistance but also the contact resistance. It has also been shown that the surface potential measurement based on the electrostatic force detection in the scanning probe microscopy was effective in studying the behavior of the CNTFETs such as the transient behavior and the effect of the defects. Finally, in the CNTFETs fabricated using plasma-enhanced (PE) CVD-grown nanotubes, most of the drain current could be modulated by the gate voltage with little non-depletable drain current suggesting the preferential growth of the nanotubes with semiconducting behavior. © 2008 IOP Publishing Ltd.

    DOI: 10.1088/1742-6596/109/1/012002

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  98. Potential profile measurement of carbon nanotube FETs based on the electrostatic force detection

    Okigawa Yuki, Umesaka Takeo, Ohno Yutaka, Kishimoto Shigeru, Mizutani Takashi

    NANO   Vol. 3 ( 1 ) page: 51 - 54   2008.2

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  99. Potential profile measurement of carbon nanotube FETs based on the electrostatic force detection

    Okigawa Y., Umesaka T., Ohno Y., Kishimoto S., Mizutani T.

    Nano   Vol. 3 ( 1 ) page: 51 - 54   2008.2

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    We have measured the potential distribution on carbon nanotube (CNT) field-effect transistors (FETs) using electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KFM). Clearer potential profiles were obtained by EFM than by KFM. When the CNT-FET is in the ON state, the EFM image shows uniform potential distribution along the CNT. In contrast, when the CNT-FET is in the OFF state, nonuniform potential image with dark spots are obtained. The dark spots can be attributed to the defects in the CNTs. © 2008 World Scientific Publishing Company.

    DOI: 10.1142/S1793292008000812

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  100. Electrical properties of carbon nanotube FETs

    Mizutania T., Ohno Y., Kishimoto S.

    ASDAM 2008, CONFERENCE PROCEEDINGS     page: 1 - 8   2008

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  101. AlGaN/GaN MIS-HEMTs with HfO<inf>2</inf> gate insulator

    Kawano A., Kishimoto S., Ohno Y., Maezawa K., Mizutani T., Ueno H., Ueda T., Tanaka T.

    Physica Status Solidi (C) Current Topics in Solid State Physics   Vol. 4 ( 7 ) page: 2700 - 2703   2007.12

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    AlGaN/GaN MIS-HEMTs using HfO2 gate insulator with a large dielectric constant have been fabricated. HfO2 gate insulator was deposited by pulsed laser deposition at room temperature. It has been demonstrated that the HfO2 gate insulator is effective in suppressing the gate leakage current keeping a large transconductance. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

    DOI: 10.1002/pssc.200674769

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  102. Enhanced 1520 nm photoluminescence from Er3+ ions in di-erbium-carbide metallofullerenes (Er2C2)@C-82 (isomers I, II, and III)

    Ito Yasuhiro, Okazaki Toshiya, Okubo Shingo, Akachi Masahiro, Ohno Yutaka, Mizutani Takashi, Nakamura Tetsuya, Kitaura Ryo, Sugai Toshiki, Shinohara Hisanori

    ACS NANO   Vol. 1 ( 5 ) page: 456 - 462   2007.12

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    Di-erbium and di-erbium-carbide endohedral metallofullerenes with a C 82 cage such as Er2@C82 (isomers I, II, and III) and (Er2C2)@C82 (isomers I, II, and III) have been synthesized and chromatographically isolated (99%). The structures of Er2@C82 (I, II, III) and (Er2C 2)@C82 (I, II, III) metallofullerenes are characterized by comparison with the UV-vis-NIR absorption spectra of (Y2C 2)@C82 (I, II, III), where molecular symmetries of the structures are determined to be Cs, C2v and C 3v, respectively. Furthermore, enhanced near-infrared photoluminescence (PL) at 1520 nm from Er3+ ions in Er 2@C82 (I, III) and (Er2C2)@C 82 (I, III) have been observed at room temperature. The PL intensities have been shown to depend on the symmetry of the C82 cage. In particular, the PL intensity of (Er2C2)@C 82 (III) has been the strongest among the isomers of Er 2@C82 and (Er2C2)@C82. Optical measurements indicate that the PL properties of Er2@C 82 (I, II, III) and (Er2C2)@C82 (I, II, III) correlate strongly with the absorbance at 1520 nm and the HOMO-LUMO energy gap of the C82 cage. © 2007 American Chemical Society.

    DOI: 10.1021/nn700235z

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  103. Excitonic transition energies in single-walled carbon nanotubes: Dependence on environmental dielectric constant

    Ohno Yutaka, Iwasaki Shinya, Murakami Yoichi, Kishimoto Shigeru, Maruyama Shigeo, Mizutani Takashi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 244 ( 11 ) page: 4002 - 4005   2007.11

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    The dependence of optical transition energies in single-walled carbon nanotubes (SWNTs) on environmental dielectric constant (εenv) have been investigated in the range of εenv from 1.0 to 37, by immersing SWNTs bridged overtrenches in various organic solvents by means of photoluminescence (PL) and the excitation spectroscopies. With increasing εenv, both E11 and E22 exhibited a redshift by several tens meV and a tendency to saturate at a εenv ∼ 5 without an indication of significant (n,m) dependence. The redshifts can be explained by dielectric screening of the repulsive electron-electron interaction. We have also investigated the time-resolved PL in air and in solvent, respectively, utilizing the excitation intensity correlation technique. When the sample was immersed in solvent, the correlation signal collapsed, and the decay time decrease as compared to in air. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

    DOI: 10.1002/pssb.200776124

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  104. The effects of chemical doping with F(4)TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique

    Nosho Y., Ohno Y., Kishimoto S., Mizutani T.

    NANOTECHNOLOGY   Vol. 18 ( 41 )   2007.10

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    We have studied the effects of p-type chemical doping with F 4TCNQ (tetrafluorotetracyano-p-quinodimethane) in carbon nanotube field-effect transistors (CNFETs). The transmission-line-model technique using multi-probe CNFETs has been employed to investigate the effects of chemical doping on the channel resistance and contact resistance. It has been found that chemical doping is effective in the reduction of the contact resistance as well as the channel resistance. The device performances of top-gate CNFETs such as transconductance, on-resistance, and on/off ratio were improved by the F 4TCNQ chemical doping on the access regions. © IOP Publishing Ltd.

    DOI: 10.1088/0957-4484/18/41/415202

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  105. Dependence of exciton transition energy of single-walled carbon nanotubes on surrounding dielectric materials

    Miyauchi Y., Saito R., Sato K., Ohno Y., Iwasaki S., Mizutani T., Jiang J., Maruyama S.

    CHEMICAL PHYSICS LETTERS   Vol. 442 ( 4-6 ) page: 394 - 399   2007.7

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    We theoretically investigate the environmental effect for optical transition energies of single-walled carbon nanotubes (SWNTs), by calculating the exciton transition energies of SWNTs. The static dielectric constants used in the exciton calculation can be expressed as a function of the dielectric constants of the surrounding material and that of the SWNT, in which the static and dynamic dielectric constants of the SWNT represent the screening effect of core electrons and the valence π electrons, respectively. The calculated results reproduce the environmental effect of the experimental transition energies for various surrounding materials and for various diameters of SWNTs. © 2007 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.cplett.2007.06.018

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  106. Evidence of edge conduction at nanotube/metal contact in carbon nanotube devices

    Nosho Yosuke, Ohno Yutaka, Kishimoto Shigeru, Mizutani Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   Vol. 46 ( 17-19 ) page: L474 - L476   2007.5

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    We have investigated the current flow path between the nanotube and the contact electrode in carbon nanotube devices using multiprobe devices. The contact and channel resistances have been evaluated by two methods; transmission-line-model technique and four-probe measurement. By comparing the results, we have found that channel resistance evaluated by the four-probe measurement includes contact resistance. This indicates that the widely used four-probe measurement is not applicable to nanotube devices for the evaluation of channel resistance excluding contact resistance. This finding also implies that electron transport between the nanotube and the contact metal occurs at the edge of the contact electrode. ©2007 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.46.L474

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  107. Surface potential measurement of carbon nanotube field-effect transistors using Kelvin probe force microscopy

    Umesaka Takeo, Ohnaka Hirofumi, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 46 ( 4B ) page: 2496 - 2500   2007.4

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    The surface potential of carbon nanotube field-effect transistors (CNT-FETs) was measured using Kelvin probe force microscopy (KFM). A clear potential image of the CNT channel with a diameter of 1.1 nm was obtained by measurement in air. The measured potential image was dependent on the sequence of the gate bias, and showed transient behavior with a time constant of several tens of minutes. These behaviors were consistent with the drain current transient and the hysteresis of the current-voltage characteristic of the CNT-FETs. © 2007 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.46.2496

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  108. (解説)カーボンナノチューブの光電子機能デバイス応用

    大野 雄高

    マテリアルステージ 7     page: 33   2007

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  109. (解説)カーボンナノチューブトランジスタにおける電極界面の特性 Reviewed

    大野 雄高

    表面科学 28     page: 40   2007

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  110. Fabrication process of carbon nanotube FETs using ALD passivation for biosensors

    Nakashima Y., Ohno Y., Kishimoto S., Okochi M., Honda H., Mizutani T.

    MICROPROCESSES AND NANOTECHNOLOGY 2007, DIGEST OF PAPERS     page: 488 - +   2007

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  111. Interfacial Property of Metal/Nanotube Contacts in Carbon Nanotube Transistors

    OHNO Yutaka, NOSHO Yosuke, MIZUTANI Takashi

    Hyomen Kagaku   Vol. 28 ( 1 ) page: 40 - 45   2007

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    It is important to understand the interfacial properties of the nanotube/metal contacts because, in the case of carbon nanotube field-effect transistors (NT-FETs), the FET action is dominated by the Schottky barrier formed at the interface of the source contact. In this study, we have studied the interfacial properties from the electrical characterization of NT-FETs. First, the conduction pass in the vicinity of the contact electrodes has been investigated using a multi-terminal device. Then, the relation between conduction property of NT-FETs and work function of the contact metals has been investigated. The interfacial band structure has been discussed in terms of the temperature dependence of the drain current.

    DOI: 10.1380/jsssj.28.40

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  112. Relation between conduction property and work function of contact metal in carbon nanotube field-effect transistors

    Nosho Y., Ohno Y., Kishimoto S., Mizutani T.

    NANOTECHNOLOGY   Vol. 17 ( 14 ) page: 3412 - 3415   2006.7

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    We have investigated the relation between the conduction property and the work function of the contact metal in carbon nanotube field-effect transistors (NTFETs). The conduction type and the drain current are dependent on the work function. In contrast to NTFETs with Ti and Pd contact electrodes, which showed p-type conduction behaviour, devices with Mg contact electrodes showed ambipolar characteristics and most of the devices with Ca contact electrodes showed n-type conduction behaviour. This indicates that the barrier height of the metal/nanotube contact is dependent on the work function of the contact metal, which suggests that the Fermi-level pinning is weak at the interface, in contrast to conventional semiconductors such as Si and GaAs. We have also demonstrated nonlinear rectification current-voltage characteristics in a nanotube quasi-pn diode with no impurity doping, in which different contact metals with different work functions are used for the anode and the cathode. © 2006 IOP Publishing Ltd.

    DOI: 10.1088/0957-4484/17/14/011

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  113. Chirality-dependent environmental effects in photoluminescence of single-walled carbon nanotubes

    Ohno Yutaka, Iwasaki Shinya, Murakami Yoichi, Kishimoto Shigeru, Maruyama Shigeo, Mizutani Takashi

    PHYSICAL REVIEW B   Vol. 73 ( 23 )   2006.6

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    The optical transition energies, E11 and E22, of single-walled carbon nanotubes (SWNTs) suspended in air have been investigated for 20 species by photoluminescence and excitation spectroscopies. We have studied the environmental effects in photoluminescence by comparing our results with those for the SWNTs wrapped by sodium-dodecyl-sulfate (SDS), as reported by Weisman and Bachilo [Nano Lett. 3, 1235 (2003)]. The energy differences between air-suspended and SDS-wrapped SWNTs, Δ Eii = E ii air - E ii SDS, depends on the chiral vector (n,m), specifically on the chiral angle and type of SWNT (type I or type II). The Δ E11 and Δ E22 mostly blueshifted, with the exception of the Δ E22 of some type II SWNTs (that have a small chiral angle), which redshifted. With an increase in the chiral angle, the Δ E11 increased in type I SWNTs and decreased in type II SWNTs. In contrast, the Δ E22 demonstrated opposite dependence on the chiral angle. The differences in Δ E11 and Δ E22 between type I and type II disappeared in the SWNTs with chiral angles close to 30° (near armchair). The (n,m) dependence of the environmental effect on the transition energies can be explained by the difference in the effective mass, which contributes to the energy of Coulomb interactions between carriers. © 2006 The American Physical Society.

    DOI: 10.1103/PhysRevB.73.235427

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  114. Fabrication of carbon nanotube field effect transistors using plasma-enhanced chemical vapor deposition grown nanotubes

    Ohnaka Hirofumi, Kojima Yoshihiro, Kishimoto Shigeru, Ohno Yutaka, Mizutani Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 45 ( 6B ) page: 5485 - 5489   2006.6

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    Single-walled carbon nanotubes are grown using grid-inserted plasma-enhanced chemical vapor deposition (PECVD). The field effect transistor operation was confirmed using the PECVD grown carbon nanotubes (CNTs). The preferential growth of the semiconducting nanotubes was confirmed in the grid-inserted PECVD by measuring current-voltage (1-V) characteristics of the devices. Based on the measurement of the electrical breakdown of the metallic CNTs, the probability of growing the semiconducting nanotubes has been estimated to be more than 90%. © 2006 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.45.5485

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  115. Fabrication of antigen sensors using carbon nanotube field effect transistors

    Tani Kentaro, Ito Hiroshi, Ohno Yutaka, Kishimoto Shigeru, Okochi Mina, Honda Hiroyuki, Mizutani Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 45 ( 6B ) page: 5481 - 5484   2006.6

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    Antigen sensors using carbon nanotube field effect transistors (CNT-FETs) were fabricated. In order to avoid the problem of exposing source and drain electrodes directly to the phosphate buffered saline (PBS) solution, source and drain electrodes were covered with evaporated SiO film. The immobilization of antibodies on the device surface was confirmed by the observation of fluorescence. Drain current in the sensor device was decreased by the antibody-antigen binding, which suggests a potential use of CNT-FETs as antigen sensors. © 2006 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.45.5481

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  116. Suppression of hysteresis in carbon nanotube field-effect transistors: Effect of contamination induced by device fabrication process

    Shimauchi Hideki, Ohno Yutaka, Kishimoto Shigeru, Mizutani Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 45 ( 6B ) page: 5501 - 5503   2006.6

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    We have statistically studied the suppression of hysteresis in carbon nanotube field-effect transistors. The effect of the device fabrication process on the hysteresis has been investigated. The results show that contamination induced by the fabrication process impedes the suppression of hysteresis in device passivation. To remove the contamination, we have introduced a cleaning process as a treatment before passivation. The effectiveness of passivation with polymethylmetacrylate has been improved by the cleaning process using H 2SO4/H2O2 solution. © 2006 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.45.5501

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  117. AIGaN/GaN high electron mobility transistors with inclined-gate-recess structure

    Aoi Y., Ohno Y., Kishimoto S., Maezawa K., Mizutani T.

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   Vol. 45 ( 4 B ) page: 3368 - 3371   2006.4

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    We have studied an inclined-gate-recess structure in order to clarify the effect of increasing the electric field in the channel. Two-dimensional device simulation has revealed that the electric field and the electron velocity in the channel have increased by the inclined-gate-recess structure, which leads to an improvement of gm. AlGaN/GaN high electron mobility transistors (HEMTs) with inclined-gate-recess have been fabricated. Improved gm and fT have been obtained, which confirms the importance of increasing the electric field in the channel. © 2006 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.45.3368

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  118. AlGaN/GaN high electron mobility transistors with inclined-gate-recess structure

    Aoi Yuma, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 45 ( 4B ) page: 3368 - 3371   2006.4

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  119. Photoluminescence of single-walled carbon nanotubes in field-effect transistors

    Ohno Y, Kishimoto S, Mizutani T

    NANOTECHNOLOGY   Vol. 17 ( 2 ) page: 549 - 555   2006.1

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    We have studied the photoluminescence (PL) of individual single-walled carbon nanotubes (SWNTs) placed in field-effect transistor structures. The SWNTs were suspended in the air so that strong PL was obtained. When an external bias voltage was applied to the device, no spectral changes could be detected, but the intensity drastically increased or decreased. This behaviour is explained by the injection/extraction of carriers from/to the electrodes by the electric field. In the case of p-type FETs in the air, PL intensity increased due to hole injection by applying a small negative gate bias. After the device was heated in vacuum, the maximum PL intensity was obtained at zero gate bias. This can be explained by the change in the interface between the SWNT and contact electrodes. The drain field dependence of the PL intensity shows a monotonic decrease, which is explained by a competition between the recombination lifetime and transit time of photo-excited carriers in the SWNT. Using analytical steady-state rate equations on carrier density in the SWNT, the relation between the recombination lifetime and carrier transit time has been evaluated. The carrier saturation velocity has also been estimated. © 2006 IOP Publishing Ltd.

    DOI: 10.1088/0957-4484/17/2/035

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  120. (解説)カーボンナノチューブのフォトルミネッセンス

    大野 雄高

    ナノ学会会報 4     page: 67   2006

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  121. 27aUA-1 Chirality-dependent environmental effect on photoluminescence in carbon nanotubes

    Ohno Y., Iwasaki S., Murakami Y., Kishimoto S., Maruyama S., Mizutani T.

    Meeting Abstracts of the Physical Society of Japan   Vol. 61.1.4 ( 0 ) page: 805   2006

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    DOI: 10.11316/jpsgaiyo.61.1.4.0_805_3

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  122. AlGaN/GaN MIS-HEMTs with ZrO<inf>2</inf> gate insulator

    Sugimoto T., Ohno Y., Kishimoto S., Maezawa K., Osaka J., Mizutani T.

    Institute of Physics Conference Series   Vol. 184   page: 279 - 282   2005.12

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    AlGaN/GaN MIS-HEMTs using ZrO2 gate insulator with a large dielectric constant have been successfully fabricated. The gate leakage current decreased by more than three orders of magnitude compared to that of the conventional AlGaN/GaN HEMTs without the ZrO2 gate insulator. Current collapse has also been suppressed in the MIS-HEMTs. The decrease in g mmax, which was observed in the case of Si3N4 MIS-HEMTs, was suppressed in the present MIS-HEMTs demonstrating the effectiveness of the ZrO2 gate insulator. © 2005 IOP Publishing Ltd.

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  123. Electron traps in AlGaN/GaN MIS-HEMTs observed by drain current DLTS

    Okino T., Ohno Y., Kishimoto S., Maezawa K., Osaka J., Mizutani T.

    Institute of Physics Conference Series   Vol. 184   page: 271 - 274   2005.12

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    The transient behavior of AlGaN/GaN MIS-HEMTs was studied by drain current DLTS. Two negative peaks with activation energies of 0.49 eV and 0.62 eV were observed in the DLTS spectrum. The location where these levels existed was studied in detail. © 2005 IOP Publishing Ltd.

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  124. Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy

    Nakagami K., Ohno Y., Kishimoto S., Maezawa K., Mizutani T.

    Institute of Physics Conference Series   Vol. 184   page: 275 - 278   2005.12

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    Surface potential of the AlGaN/GaN high-electron-mobility transistors was measured by Kelvin probe force microscopy to study the mechanism of the drain current collapse. The potential after the gate bias stress increased due to the emission of trapped electrons from the surface states. The time constant of the potential increase was 75 s, which was comparable to that of the drain current recovery from the collapsed level. © 2005 IOP Publishing Ltd.

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  125. Deep levels in n-type AlGaN grown by hydride vapor-phase epitaxy on sapphire characterized by deep-level transient spectroscopy

    Osaka J, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

    APPLIED PHYSICS LETTERS   Vol. 87 ( 22 ) page: 1 - 3   2005.11

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    Deep levels in unintentionally doped n -type Al0.09 Ga0.91 N and Al0.17 Ga0.83 N films grown on sapphire by hydride vapor-phase epitaxy were characterized using capacitance deep-level transient spectroscopy and were compared to the reported electron traps in GaN grown by various techniques. It was shown that at least three dominant deep levels exist in each sample. The Al mole fraction dependence of their activation energy suggested that each of these three levels has the same origin as the three dominant well known point-defect-related deep levels in GaN, respectively. It is thought that deep levels in GaN change their electric characteristics in low Al content AlGaN. © 2005 American Institute of Physics.

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  126. Direct integration of GaAsHEMTs on AlN ceramic substrates using fluidic self-assembly

    Soga I, Hayashi S, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

    ELECTRONICS LETTERS   Vol. 41 ( 23 ) page: 1275 - 1276   2005.11

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    Direct integration of AlGaAs/GaAs HEMTs on AlN ceramic substrates has been demonstrated based on the fluidic self-assembly (FSA) technology. The FSA is a unique technology to arrange small device blocks (around a few tens of microns) onto the other substrates. With this technology the core part of the HEMT having no pad can be mounted on the ceramic substrate. The HEMT core can then be connected electrically with the circuit on a ceramic substrate using a planar wiring process. This eliminates large stray capacitance and inductance in the conventional technology. It has been demonstrated that the good FET characteristics are obtained even after FSA process. © IEE 2005.

    DOI: 10.1049/el:20052840

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  127. Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs

    Maezawa Koichi, Iwase Takashi, Ohno Yutaka, Kishimoto Shigeru, Mizutani Takashi, Sano Kimikazu, Takakusaki Misao, Nakata Hirofumi

    Japanese Journal of Applied Physics   Vol. 44 ( 7A ) page: 4790 - 4794   2005.7

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    In this paper we discuss the properties of InGaAs/AlAs metamorphic resonant tunneling diodes (RTDs) on GaAs substrates. The current–voltage, surface roughness, and low-frequency noise characteristics were investigated to clarify the effect of step-grading buffer layers. No degradation of the current–voltage characteristics were observed despite the large surface roughness due to a lattice mismatch. Moreover, low-frequency noise measurements showed only 1⁄<I>f</I> noise without special peak structures, and the amplitudes of which were comparable to those of the lattice-matched ones. Next, we fabricated resonant tunneling frequency divider ICs, which is based on the bifurcation phenomenon in a chaos system, on metamorphic substrates. A maximum operation frequency of 88 GHz and good phase noise properties were obtained, which are similar to those of the lattice-matched ones. These results demonstrate the effectiveness of the step-grading buffer layers even for the RTDs that consist of very thin layers and are sensitive to crystal qualities.

    DOI: 10.1143/JJAP.44.4790

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  128. Effects of Fabrication Process on Current-Voltage Characteristics of Carbon Nanotube Field Effect Transistors

    Mizutani Takashi, Iwatsuki Shinya, Ohno Yutaka, Kishimoto Shigeru

    Japanese Journal of Applied Physics   Vol. 44 ( 4A ) page: 1599 - 1602   2005.4

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    The effects of the fabrication process on the current–voltage (<I>I</I>–<I>V</I>) characteristics of carbon nanotube field effect transistors (CNT-FETs) were studied in detail. A large hysteresis observed in the <I>I</I>–<I>V</I> characteristics of the CNT-FETs having no passivation film became small by passivating the device surface with a SiN<I><SUB>x</SUB></I> film. The conduction behaivior of the CNT-FETs changed from p-type to ambipolar characteristics by SiN<I><SUB>x</SUB></I> passivation. Ambipolar characteristics were also observed in the top-gate CNT-FETs with a gate-source spacing of 2 μm.

    DOI: 10.1143/JJAP.44.1599

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  129. Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters

    Kojima Yoshihiro, Kishimoto Shigeru, Ohno Yutaka, Sakai Akira, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 44 ( 4B ) page: 2600 - 2603   2005.4

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    The effect of a grid inserted between the anode and the cathode in plasma-enhanced chemical vapor deposition (PECVD) on carbon nanotube (CNT) growth was studied. The optimum grid-cathode distance and grid-cathode voltage were 4 mm and 2–10 V, respectively. Long small-diameter nanotubes were grown under these conditions. The smallest nanotube diameter obtained was 3 nm. However, when the grid-cathode voltage was higher than 10 V, short large-diameter nanotubes were grown. The field emission characteristics of CNTs with a low ON voltage and a high current density were explained by Fowler-Nordheim (FN) tunneling.

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  130. Photoresponse of Carbon Nanotube Field-Effect Transistors

    Ohno Yutaka, Kishimoto Shigeru, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 44 ( 4A ) page: 1592 - 1595   2005.4

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    Photoresponse of carbon nanotube field-effect transistors (FETs) is investigated using microscopic measurements. The nanotube FETs, with an isolated single-walled carbon nanotube (SWNT) for the channel, were fabricated by means of the position-controlled nanotube growth technique. An increase in the off-state current and the threshold-voltage shift of the FET were caused by laser illumination. The increase in the off-state current is attributed to photocurrent due to carriers excited in the SWNT channel. The excitation spectrum of the photocurrent had a peak corresponding to optical absorption by the third interband gap of the van Hove singularity of the semiconducting SWNT with a diameter of ∼2 nm. The photocurrent increased in proportion to incident laser power with a dynamic range over four orders of magnitude. The external quantum efficiency was 2×10<SUP>−7</SUP>. An inverter action to optical-signal input was observed near the threshold voltage of the FET. The responsivity was as high as 2×10<SUP>−3</SUP> A/W for a single SWNT channel. This high responsivity is explained by the field-effect amplification phenomenon.

    DOI: 10.1143/JJAP.44.1592

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  131. Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition

    Kishimoto Shigeru, Kojima Yoshihiro, Ohno Yutaka, Sugai Toshiki, Shinohara Hisanori, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 44 ( 4A ) page: 1554 - 1557   2005.4

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    Vertically aligned long multi-walled carbon nanotubes (MWNTs) have been successfully grown by grid-inserted plasma-enhanced chemical vapor deposition (PECVD). A thin Fe (1 nm)/Ti (1 nm) double-layer catalyst was effective in growing the long MWNTs. The length of the MWNTs increased to 1 mm for the growth time of 120 min without growth termination. A thick Fe catalyst or thick Ti underlayer resulted in a low growth rate. Transmission electron microscopy, energy-dispersive X-ray analysis and thermo-gravimetric analysis (TGA) measurements suggest that the MWNTs were grown in a root growth mode. Moreover, the TGA measurements suggest that MWNTs of high quality/purity were successfully grown by grid-inserted PECVD with a double-layer catalyst.

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  132. n-Type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes

    Nosho Y, Ohno Y, Kishimoto S, Mizutani T

    APPLIED PHYSICS LETTERS   Vol. 86 ( 7 )   2005.2

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    DOI: 10.1063/1.1865343

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  133. Synthesis of carbon nanotube peapods directly on Si substrates

    Ohno Y, Kurokawa Y, Kishimoto S, Mizutani T, Shimada T, Ishida M, Okazaki T, Shinohara H, Murakami Y, Maruyama S, Sakai A, Hiraga K

    APPLIED PHYSICS LETTERS   Vol. 86 ( 2 )   2005.1

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    DOI: 10.1063/1.1849835

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  134. Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods

    Shimada Takashi, Ohno Yutaka, Suenaga Kazutomo, Okazaki Toshiya, Kishimoto Shigeru, Mizutani Takashi, Taniguchi Risa, Kato Haruhito, Cao Baopeng, Sugai Toshiki, Shinohara Hisanori

    Japanese Journal of Applied Physics   Vol. 44 ( 1A ) page: 469 - 472   2005.1

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    A fine tuning of the band gap of single-wall carbon nanotubes (SWNTs) has been achieved by filling various types of endohedral metallofullerenes into the SWNTs, the so-called nanopeapods. We report various electronic transport properties of fullerene peapods used as the channels of field-effect transistors (FETs) and demonstrate that the metallofullerene peapods can provide the tunable band gaps of the FET channels depending on the type of metallofullerene inserted in the SWNTs. All of the metallofullerene peapods FETs exhibit p- and n-type, the so-called ambipolar carrier transportation by variable gate bias. The ranges of the off state regions of the FET fabricated highly sensitivity with respect to the amount of charge transfer in metallofullerenes, which results in band-gap engineering. Metallofullerene peapods can be used to manipulate the electronic structure of SWNTs in nanometer scale. In such a highly functionalized SWNT, metallofullerene peapods, might be a key material for fabricating and developing sophisticated electronic devices in the future.

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  135. AlGaN/GaN MIS-HEMTs with ZrO2 gate insulator

    Sugimoto T, Ohno Y, Kishimoto S, Maezawa K, Osaka J, Mizutani T

    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS   Vol. 184   page: 279 - 282   2005

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  136. Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate

    Kurokawa Yuto, Ohno Yutaka, Shimada Takashi, Ishida Masashi, Kishimoto Shigeru, Okazaki Toshiya, Shinohara Hisanori, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 44 ( 42-45 ) page: L1341 - L1343   2005

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    We have successfully fabricated carbon nanopeapod field-effect transistors (FETs) using peapods synthesized directly on a SiO<SUB>2</SUB>/Si substrate. Single-walled carbon nanotubes (SWNTs) for pods were synthesized on the substrate by utilizing position-controlled chemical vapor deposition. The end caps of the SWNTs were removed by oxidation by baking in air. Insertion of fullerenes into the cap-opened SWNTs was performed by the vapor phase doping method. Fabricated Gd@C<SUB>82</SUB> peapod FETs showed ambipolar characteristics. We have estimated the bandgap of the Gd@C<SUB>82</SUB> peapod to be ∼100 meV from the temperature dependence of the drain current.

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  137. Fabrication and characterization of carbon nanotube FETs

    Mizutani T, Ohno Y

    QUANTUM SENSING AND NANOPHOTONIC DEVICES II   Vol. 5732   page: 28 - 36   2005

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    DOI: 10.1117/12.580040

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  138. Electron traps in AlGaN/GaN MIS-HEMTs observed by drain current DLTS

    Okino T, Ohno Y, Kishimoto S, Maezawa K, Osaka J, Mizutani T

    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS   Vol. 184   page: 271 - 274   2005

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  139. Origin of the 2450 cm(-1) Raman bands in HOPG, single-wall and double-wall carbon nanotubes

    Shimada T, Sugai T, Fantini C, Souza M, Cancado LG, Jorio A, Pimenta MA, Salto R, Gruneis A, Dresselhaus G, Dresselhaus MS, Ohno Y, Mizutani T, Shinohara H

    CARBON   Vol. 43 ( 5 ) page: 1049 - 1054   2005

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  140. Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy

    Nakagami K, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS   Vol. 184   page: 275 - 278   2005

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  141. Surface potential measurements of AlGaN/GaN high-electron-mobility transistors by Kelvin probe force microscopy

    Nakagami K, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

    APPLIED PHYSICS LETTERS   Vol. 85 ( 24 ) page: 6028 - 6029   2004.12

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    DOI: 10.1063/1.1835551

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  142. Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration

    Soga Ikuo, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 43 ( 9A ) page: 5951 - 5954   2004.9

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    We have studied the fluidic assembly (FA) technique for heterogeneous integration. In this technique, device blocks, the size of which ranges from a few tens of microns to a few hundreds of microns, are arranged onto another material substrate in fluid. Here, we propose a novel technique to improve FA, called fluid dynamic assembly (FDA), which employs fluid dynamic effects. In the FDA, a special structure is fabricated on the block, which stabilizes the posture of the blocks falling in the fluid. This can be used to control the face of assembled blocks. In this paper, the feasibility of the FDA is discussed on the basis of fluid dynamic simulation and experiments. The numerical simulations revealed that the face control can be carried out for the block having ringlike (O-type) structures on it. Then we carried out the FDA experiments using thin disk-shaped GaAs blocks with O-type structure, and demonstrated an 87% face control ratio for the blocks with 7.5-μm-thick structure. Moreover, the less symmetric C-type structure was examined, and demonstrated even a high face control ratio of 96%.

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  143. Direct Observation of High-Frequency Chaos Signals from the Resonant Tunneling Chaos Generator

    Maezawa Koichi, Kawano Yoichi, Ohno Yutaka, Kishimoto Shigeru, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 43 ( 8A ) page: 5235 - 5238   2004.8

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    The direct observation of the chaos signal patterns in a microwave frequency range was demonstrated on the resonant tunneling chaos generator circuit. It is difficult to observe such high-frequency chaos because one must use a sampling oscilloscope. To overcome this problem, we devised a special circuit controlling the chaos to output identical signals repeatedly. This permits us to observe (seemingly)random patterns. This control scheme may lead to various applications.

    DOI: 10.1143/jjap.43.5235

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  144. Drain current DLTS of AlGaN-GaN MIS-HEMTs

    Okino T, Ochiai A, Ohno Y, Kishimoto S, Maezawa K, Mizutani I

    IEEE ELECTRON DEVICE LETTERS   Vol. 25 ( 8 ) page: 523 - 525   2004.8

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    DOI: 10.1109/LED.2004.832788

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  145. Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam

    Kurokawa Yuto, Ohno Yutaka, Kishimoto Shigeru, Okazaki Toshiya, Shinohara Hisanori, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 43 ( 8A ) page: 5669 - 5670   2004.8

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    We have proposed a technique for fabricating carbon nanotube single-electron transistors using a focused ion beam (FIB). Wiring to a multiwalled carbon nanotube was formed by the ion-beam-assisted deposition of tungsten. Tunneling barriers were formed in the nanotube by ion beam etching. A drain current oscillation originating from the Coulomb blockade effect was observed at 23 K.

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  146. Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics

    Shimada T, Sugai T, Ohno Y, Kishimoto S, Mizutani T, Yoshida H, Okazaki T, Shinohara H

    APPLIED PHYSICS LETTERS   Vol. 84 ( 13 ) page: 2412 - 2414   2004.3

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    DOI: 10.1063/1.1689404

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  147. Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors

    Ohno Y, Nakao T, Kishimoto S, Maezawa K, Mizutani T

    APPLIED PHYSICS LETTERS   Vol. 84 ( 12 ) page: 2184 - 2186   2004.3

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    DOI: 10.1063/1.1687983

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  148. Transport properties of C-78, C-90 and Dy@C-82 fullerenes-nanopeapods by field effect transistors

    Shimada T, Ohno Y, Okazaki T, Sugai T, Suenaga K, Kishimoto S, Mizutani T, Inoue T, Taniguchi R, Fukui N, Okubo H, Shinohara H

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   Vol. 21 ( 2-4 ) page: 1089 - 1092   2004.3

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  149. Chirality assignment of individual single-walled carbon nanotubes in carbon nanotube field-effect transistors by micro-photocurrent spectroscopy

    Ohno Y, Kishimoto S, Mizutani T, Okazaki T, Shinohara H

    APPLIED PHYSICS LETTERS   Vol. 84 ( 8 ) page: 1368 - 1370   2004.2

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    DOI: 10.1063/1.1650554

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  150. Drain current DLTS of AlGaN/GaN HEMTs

    Mizutani T, Okino T, Kawada K, Ohno Y, Kishimoto S, Maezawa K

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 200 ( 1 ) page: 195 - 198   2003.11

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    DOI: 10.1002/pssa.200303464

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  151. Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film

    Sato Kuninori, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 42 ( 11 ) page: 6839 - 6840   2003.11

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    We proposed and successfully fabricated a GaAs-based semiconductor-on-insulator (SOI) metal–semiconductor-filed-effect-transistor (MESFET) using a low-temperature wafer-bonding technique with a spin-on low-<I>k</I> dielectric film, FO<I>x</I>, as a bonding layer. In this structure, the channel is isolated from the semi-insulating (SI) GaAs substrate by a FO<I>x</I> layer. The fabricated 1-μm-gate-length SOI MESFETs showed good pinch-off and saturation characteristics. One of the most important improvements expected for this structure is a reduction of the drain-source capacitance, <I>C</I><SUB>DS</SUB>, which dominates the microwave switching property (on/off ratio). It was demonstrated that the <I>C</I><SUB>DS</SUB> of the SOI MESFET is much smaller than that of the conventional GaAs MESFET. It was also confirmed that the drain current of the SOI MESFET is negligibly affected by the side-gate voltage.

    DOI: 10.1143/JJAP.42.6839

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  152. Experimental Demonstration of Capacitor-Coupled Resonant Tunneling Logic Gates for Ultra-short Gate-delay Operation

    Tanaka Tetsuro, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 42 ( 11 ) page: 6766 - 6771   2003.11

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    The capacitor-coupled monostable-bistable transition logic element (C<SUP>2</SUP>MOBILE) is an extension of the high-speed logic gate MOBILE based on the negative differential resistance of the resonant tunneling diodes. The C<SUP>2</SUP>MOBILE uses a transient current through the coupling capacitor to transmit signals between gates, and is expected to operate with an extremely short gate delay time. In this paper, basic operations of the C<SUP>2</SUP>MOBILE are demonstrated with the circuits fabricated on InP substrates. The circuits tested here are the 2- and 3-stage logic circuits and the AND/OR gate. The gate delay time was estimated to be around 1 ps for these circuits. A much shorter gate delay time close to 100 fs should be possible with the sophisticated circuit design and fabrication process.

    DOI: 10.1143/JJAP.42.6766

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  153. 88 GHz dynamic 2 : 1 frequency divider using resonant tunnelling chaos circuit

    Kawano Y, Ohno Y, Kishimoto S, Maezawa K, Mizutani T, Sano K

    ELECTRONICS LETTERS   Vol. 39 ( 21 ) page: 1546 - 1548   2003.10

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    DOI: 10.1049/el:20030972

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  154. A study on current collapse in AlGaN/GaN HEMTs induced by bias stress

    Mizutani T, Ohno Y, Akita M, Kishimoto S, Maezawa K

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 50 ( 10 ) page: 2015 - 2020   2003.10

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    DOI: 10.1109/TED.2003.816549

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  155. Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst

    Ohno Yutaka, Iwatsuki Shinya, Hiraoka Tatsuki, Okazaki Toshiya, Kishimoto Shigeru, Maezawa Koichi, Shinohara Hisanori, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 42 ( 6B ) page: 4116 - 4119   2003.6

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    Position-controlled carbon nanotube field effect transistors (FETs) have been fabricated by using patterned catalysts and chemical vapor deposition. A double-layer metal of platinum and cobalt was used as the catalyst. The use of a mixture of ethanol and argon as the source gas was effective for obtaining FETs with good characteristics. Coulomb oscillation was observed at room temperature. 76% of the fabricated devices showed FET operation. The characteristics of FETs with metallic nanotubes were improved by applying a high voltage.

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  156. AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator

    Ochiai Masaru, Akita Mitsutoshi, Ohno Yutaka, Kishimoto Shigeru, Maezawa Kouichi, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 42 ( 4B ) page: 2278 - 2280   2003.4

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    AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Si<SUB>3</SUB>N<SUB>4</SUB> film as a gate insulator have been successfully fabricated. The gate leakage current decreased by about three orders of magnitude compared to that of the conventional AlGaN/GaN HEMTs without the Si<SUB>3</SUB>N<SUB>4</SUB> gate insulator. The low-frequency noise of the MIS-HEMTs was smaller than that of the conventional HEMTs. Current collapse has also been suppressed in the MIS-HEMTs.

    DOI: 10.1143/JJAP.42.2278

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  157. Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs

    Kawada Kenji, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi, Takakusaki Misao, Nakata Hirofumi

    Japanese Journal of Applied Physics   Vol. 42 ( 4B ) page: 2219 - 2222   2003.4

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    Metamorphic In<SUB>0.52</SUB>Al<SUB>0.48</SUB>As/In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As high electron mobility transistors (MHEMTs) were fabricated on GaAs substrates. A step-graded InAlAs buffer layer was used to relax the lattice mismatch between the active layers and the substrates. The electrical characteristics of the MHEMTs were compared with those of HEMTs on InP substrates (InP HEMTs) and pseudomorphic HEMTs (PHEMTs). Present MHEMTs have exhibited superior characteristics in the low-frequency (LF) noise and side-gate effect to InP HEMTs and PHEMTs. A sufficiently high current-gain cutoff frequency of 210 GHz was obtained for the MHEMTs with gate length of 0.1 μm.

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  158. Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN

    Kumada Keiichiro, Murata Tomohiro, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi, Sawaki Nobuhiko

    Japanese Journal of Applied Physics   Vol. 42 ( 4B ) page: 2250 - 2253   2003.4

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    Current-voltage characteristics of micro-Schottky contacts fabricated on Epitaxial lateral overgrowth (ELO) GaN have been measured. The obtained characteristics are classified into two groups; good contacts with small ideality factor (<I>n</I>-value) and poor contacts with large <I>n</I>-value. By comparing the distribution of <I>I</I>-<I>V</I> characteristics of the micro-Schottky contact array with the distribution of dislocations revealed by molten KOH etching, it was concluded that the dislocations are not responsible for the poor <I>I</I>-<I>V</I> characteristics of the Schottky contacts. Regarding the origin of the poor <I>I</I>-<I>V</I> characteristics, the high doping density area formed at the top surface of the as-grown wafer was suggested.

    DOI: 10.1143/JJAP.42.2250

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  159. Fluidic Assembly of Thin GaAs Blocks on Si Substrates

    Soga Ikuo, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 42 ( 4B ) page: 2226 - 2229   2003.4

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    We have studied the fluidic assembly technique for heterogeneous integration. In this technique, small device blocks, the size of which ranges from a few tens of microns to a few hundreds of microns, can be assembled into the recesses formed on the Si substrate. First, we used thin disk-shaped GaAs blocks to study the fundamental process of the fluidic assembly. A 100% yield was achieved with an appropriate strength of sonic vibration. The assembled blocks were confirmed to have no strain by using Raman scattering spectroscopy even if they were annealed at 320°C for 30 min. In addition, the effects of the shape of blocks are discussed based on the experimental results for disk- and square-shaped blocks.

    DOI: 10.1143/JJAP.42.2226

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  160. Electronic properties of Gd@C-82 metallofullerene peapods: (Gd @ C-82)(n)@SWNTs

    Okazaki T, Shimada T, Suenaga K, Ohno Y, Mizutani T, Lee J, Kuk Y, Shinohara H

    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING   Vol. 76 ( 4 ) page: 475 - 478   2003.3

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    DOI: 10.1007/s00339-002-2039-7

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  161. Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors.

    Mizutani Takashi, Makihara Hiroshi, Akita Mitsutoshi, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi

    Japanese Journal of Applied Physics   Vol. 42 ( 2A ) page: 424 - 425   2003.2

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    Frequency dispersion of the drain conductance was observed in AlGaN/GaN high electron mobility transistors (HEMTs). The transition frequency shifted to higher frequencies with increasing temperature. The activation energy for the change of the transition frequency was 0.47 eV, which was almost the same as that obtained by the measurement of the temperature dependence of the low-frequency noise.

    DOI: 10.1143/JJAP.42.424

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  162. Carrier transport properties of carbonnanotubes and nanopeapods

    Shimada Takashi, Ohno Yutaka, Okazaki Toshiya, Sugai Toshiki, Kishimoto Shigeru, Mizutani Takashi, Shinohara Hisanori

    Meeting Abstracts of the Physical Society of Japan   Vol. 58.2.4 ( 0 ) page: 760   2003

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    DOI: 10.11316/jpsgaiyo.58.2.4.0_760_3

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  163. Experimental demonstration of a resonant tunneling delta-sigma modulator for high-speed, high-resolution analog-to-digital converter

    Yokoyama Y, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

    COMPOUND SEMICONDUCTORS 2002   Vol. 174   page: 243 - 246   2003

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  164. Study on off-state breakdown in AlGaN/GaN HEMTs

    Nakao T, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS   Vol. 0 ( 7 ) page: 2335 - 2338   2003

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    DOI: 10.1002/pssc.200303405

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  165. The round table talk of the successive presidents of JSSST

    OHNO Yutaka, KATAYAMA Takuya, YONEZAWA Akinori, TAKEICHI Masato, AGUSA Kiyoshi

    Computer Software   Vol. 20 ( 6 ) page: 537 - 548   2003

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    DOI: 10.11309/jssst.20.537

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  166. Current collapse in AlGaN/GaN HEMTs investigated by electrical and optical characterizations

    Mizutani T, Ohno Y, Akita M, Kishimoto S, Maezawa K

    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH   Vol. 194 ( 2 ) page: 447 - 451   2002.12

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  167. Ambipolar field-effect transistor behavior of Gd@C-82 metallofullerene peapods

    Shimada T, Okazaki T, Taniguchi R, Sugai T, Shinohara H, Suenaga K, Ohno Y, Mizuno S, Kishimoto S, Mizutani T

    APPLIED PHYSICS LETTERS   Vol. 81 ( 21 ) page: 4067 - 4069   2002.11

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    DOI: 10.1063/1.1522482

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  168. Effects of the HEMT parameters on the operation frequency of resonant tunneling logic gate MOBILE

    Aoyama T, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

    ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS   Vol. 85 ( 10 ) page: 1 - 6   2002.10

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    DOI: 10.1002/ecjb.10055

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  169. Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors.

    Mizuno Shinya, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 41 ( 8 ) page: 5125 - 5126   2002.8

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    A large gate leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) was observed. Temperature dependence of <I>I</I><FONT SIZE="-1"><SUB>g</SUB></FONT>-<I>V</I><FONT SIZE="-1"><SUB>g</SUB></FONT> characteristics revealed that tunneling current is dominant in the leakage current. By introducing ECR plasma treatment before the gate metal deposition, the gate leakage current was reduced by two to three orders of magnitude.

    DOI: 10.1143/JJAP.41.5125

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  170. Temperature distribution measurement in AlGaN/GaN high-electron-mobility transistors by micro-Raman scattering spectroscopy

    Ohno Y, Akita M, Kishimoto S, Maezawa K, Mizutani T

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   Vol. 41 ( 4B ) page: L452 - L454   2002.4

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  171. Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage.

    Nakao Takeshi, Ohno Yutaka, Akita Mitsutoshi, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 41 ( 4A ) page: 1990 - 1991   2002.4

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    Electroluminescence (EL) in GaN high electron mobility transistors (HEMTs) biased at high drain-source voltages was investigated. The electroluminescence was observed at the drain edge where the high-field region is formed. This is quite different from the case of GaAs HEMTs where luminescence was observed at the gate edge. EL spectroscopy was also performed. The luminescence with the wavelength of visible to near-infrared light, the energy of which was less than the band gap energy, was observed with polarization in the direction parallel to the drain current.

    DOI: 10.1143/JJAP.41.1990

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  172. 50 GHz frequency divider using resonant tunnelling chaos circuit

    Kawano Y, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

    ELECTRONICS LETTERS   Vol. 38 ( 7 ) page: 305 - 306   2002.3

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    DOI: 10.1049/el:20020222

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  173. Indium Phosphide & Related Materials. High-Speed Operation of a Novel Frequency Divider Using Resonant Thnneling Chaos Circuit.

    Kawano Yoichi, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 41 ( 2B ) page: 1150 - 1153   2002.2

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    This paper demonstrates high-frequency operations of the frequency divider IC composed of a resonant tunneling diode and a high electron mobility transistor. The maximum frequency dividing operation of 6.3 GHz was confirmed. This circuit is based on the long-period behavior of the nonlinear circuits generating chaos. We investigate the effects of the input frequency, the bias voltage, and the input amplitude on the operation to discuss the operating margins. It is also shown that the dividing ratio can be selected by changing the input amplitude.

    DOI: 10.1143/JJAP.41.1150

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  174. Electroluminescence in AlGaN/GaN HEMTS

    Ohno Y, Nakao T, Akita M, Kishimoto S, Maezawa K, Mizutani T

    COMPOUND SEMICONDUCTORS 2001   ( 170 ) page: 119 - 124   2002

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  175. Low-frequency noise characteristics of AlGaN/GaN HEMT

    Makihara H, Akita M, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

    COMPOUND SEMICONDUCTORS 2001   ( 170 ) page: 113 - 117   2002

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  176. Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy.

    Ohno Yutaka, Akita Mitsutoshi, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 41 ( 4B ) page: L452 - L454   2002

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    Temperature distributions in AlGaN/GaN high-electron-mobility transistors under bias voltage have been measured by micro-Raman scattering spectroscopy. The temperature was estimated from the Raman shift of E<FONT SIZE="-1"><SUB>2</SUB></FONT> phonons of GaN. The spatial and temperature resolutions are 1 μm and 10 K, respectively. When the power dissipation was 248 mW at a drain voltage of 40 V, the peak temperature of 443 K was observed at the gate edge on the drain side at the center of the channel. This position corresponds to the high-field region at the gate edge.

    DOI: 10.1143/jjap.41.l452

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  177. Temperature distributions in AlGaN/GaN HEMTs measured by micro-Raman scattering spectroscopy

    Ohno Y, Akita M, Kishimoto S, Maezawa K, Mizutani T

    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS     page: 57 - 60   2002

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  178. A delta-sigma analog-to-digital converter using resonant tunneling diodes

    Yokoyama Y, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   Vol. 40 ( 10A ) page: L1005 - L1007   2001.10

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  179. Resonant-tunneling-injection photoluminescence of single InAs self-assembled quantum dots embedded in a thin AlGaAs barrier

    Ohno Y, Kishimoto S, Maezawa K, Mizutani T

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 40 ( 3B ) page: 2065 - 2068   2001.3

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  180. A Delta-Sigma Analog-to-Digital Converter Using Resonant Tunneling Diodes.

    Yokoyama Yuji, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 40 ( 10A ) page: L1005 - L1007   2001

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    A novel delta-sigma (ΔΣ) analog-to-digital converter (ADC) using resonant tunneling diodes (RTDs) is proposed. A ΔΣ modulator circuit, which is the key element of the ΔΣ ADC, can be designed in a very simple form using a monostable-bistable transition logic element (MOBILE). The operation of this ΔΣ modulator circuit is confirmed by numerical simulation.

    DOI: 10.1143/jjap.40.l1005

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  181. High-speed operation of a novel frequency divider using resonant tunneling chaos circuit

    Kawano Y, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS     page: 236 - 239   2001

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  182. Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in a Thin AlGaAs Barrier.

    Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 40 ( 3B ) page: 2065 - 2068   2001

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    We have investigated resonant-tunneling-injection photoluminescence (PL) of single InAs self-assembled quantum dots (QDs) which were embedded in the barrier layer of an n-GaAs/i-AlGaAs/n-GaAs tunneling diode. A triangular structure in the PL intensity-voltage characteristics of a single PL line was observed. This reflects the electron tunneling from a three-dimensional emitter to the zero-dimensional quantum level of the QD. In addition, three subpeaks and a broad bulge of the PL were superimposed on the triangular structure. The subpeaks were ascribed to the resonant tunneling of holes into valence quantum levels of the QD. The origin of the excess PL bulge which is obtained at off-resonance bias condition is also discussed.

    DOI: 10.1143/jjap.40.2065

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  183. Observation of resonant tunneling through single self-assembled InAs quantum dots using electrophotoluminescence spectroscopy

    Ohno Y, Asaoka K, Kishimoto S, Maezawa K, Mizutani T

    JOURNAL OF APPLIED PHYSICS   Vol. 87 ( 9 ) page: 4332 - 4336   2000.5

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  184. Photoluminescence study of resonant tunneling transistor with p(+)/n-junction gate

    Ohno Y, Kishimoto S, Maezawa K, Mizutani T

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 39 ( 1 ) page: 35 - 40   2000.1

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  185. Photoluminescence Study of Resonant Tunneling Teansistor with p+/n-Junction Gate.

    Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 39 ( 1 ) page: 35 - 40   2000

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    We studied photoluminescence (PL) of a resonant tunneling transistor with a p<FONT SIZE="-1"><SUP>+</SUP></FONT>/n-junction gate. The excitation energy was selected to be close to the band-gap energy of the GaAs collector layer 1) so as not to excite the barrier layer and quantum well directly, and 2) in order to obtain a simple luminescence spectrum. The PL signal shows strong correlation with the resonant tunneling current. The PL peak position shows a redshift with increasing collector voltage, indicating the existence of the quantum-confined Stark effect. The collector voltage dependence of the PL linewidth suggests the existence of charge accumulation in the quantum well. The accumulated electron density and the charging time were estimated. It was also shown that the PL intensity could be controlled by the gate voltage without affecting the resonant tunneling behavior of electrons.

    DOI: 10.1143/jjap.39.35

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  186. Optoelectronic flexible-function logic gate using monostable-bistable transition of serially connected resonant tunneling transistors

    Ohno Y, Kishimoto S, Maezawa K, Mizutani T, Akeyoshi T

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 38 ( 4B ) page: 2586 - 2589   1999.4

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  187. Measurements of electroluminescence intensity distribution in the direction of gate width of n(+) self-aligned gate GaAs metal-semiconductor field-effect transistors

    Niwa H, Ohno Y, Kishimoto S, Maezawa K, Mizutani T, Yamazaki H, Taniguchi T

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 38 ( 3A ) page: 1363 - 1364   1999.3

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  188. Microscopic photoluminescence study of InAs single quantum dots grown on (100) GaAs

    Asaoka K, Ohno Y, Kishimoto S, Mizutani T

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   Vol. 38 ( 1B ) page: 546 - 549   1999.1

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  189. Photoluminescence intensity enhancement by electron beam irradiation into GaAs quantum wells

    Murata T, Ohno Y, Kishimoto S, Mizutani T

    SOLID-STATE ELECTRONICS   Vol. 43 ( 1 ) page: 147 - 152   1999.1

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  190. Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors.

    Niwa Hiroyuki, Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi, Yamazaki Hajime, Taniguchi Toru

    Japanese Journal of Applied Physics   Vol. 38 ( 3A ) page: 1363 - 1364   1999

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    We studied electroluminescence (EL) intensity distributions in the direction of gate width of n<SUP>+</SUP> self-aligned gate GaAs metal-semiconductor field-effect transistors (MESFETs). Nonuniform EL was observed along the gate-width direction, suggesting the nonuniform high-field formation in the direction of the gate. It has also been found that the EL at the source side shows gentler distribution than that at the drain side. These features suggest that the nonuniform hole distribution generated by impact ionization at the drain side becomes gradual during the process of their flow into the source and gate electrodes.

    DOI: 10.1143/jjap.38.1363

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  191. Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tanneling Transitors.

    Ohno Yutaka, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi, Akeyoshi Tomoyuki

    Japanese Journal of Applied Physics   Vol. 38 ( 4B ) page: 2586 - 2589   1999

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    A novel optoelectronic resonant tunneling logic gate, OE MOBILE, is proposed and its basic logic functions such as NOT, NOR, NAND, OR, and AND are confirmed for optical inputs. The fundamental idea is to use optical inputs to determine the logic level of the gate which consists of two serially connected resonant tunneling transistors (RTTs) with a p<sup>+</sup>/n-junction gate. The OE MOBILE is operated by oscillating bias voltage to employ monostable-bistable transition. At the time when the transition occurs, the optical inputs are applied by illuminating the RTTs to control their peak currents and consequently to determine the output logic levels. The power of an optical input for logic operations is as small as 5 µW owing to the operation based on monostable-bistable transition. It should be pointed out that the functions of an OE MOBILE can be changed between NOR and NAND by changing the control terminal voltage.

    DOI: 10.1143/jjap.38.2586

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  192. Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs.

    Asaoka Kazuya, Ohno Yutaka, Kishimoto Shigeru, Mizutani Takashi

    Japanese Journal of Applied Physics   Vol. 38 ( 1B ) page: 546 - 549   1999

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    We report ultranarrow (≤60 µeV) photoluminescence (PL) lines originating from single InAs quantum dots (QDs) sandwiched by Al<SUB>0.35</SUB>Ga<SUB>0.65</SUB>As barrier layers, demonstrating their δ-function-like density of states (DOS). The temperature dependence of the full-width at half maximum (FWHM) was studied between 10 and 90 K. It linearly increased with increasing temperature from 40 to 80 K (~7 µeV/K), suggesting the existence of an excitonic dephasing mechanism. Pure dephasing of excitons due to exciton-phonon interactions in acoustic phonon mode was suggested as a possible mechanism for the PL line broadening.

    DOI: 10.1143/jjap.38.546

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  193. Feature Articles] MoS2 Nanogenerators: Harvesting Energy from Droplet Movement Invited Reviewed International journal

    A. S. Aji and Y. Ohno

    AAPPS Bulletin   Vol. 30 ( 4 ) page: 10 - 15   2020.8

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    DOI: 10.22661/AAPPSBL.2020.30.4.10

  194. Clinical impact of the loss of chromosome 7q on outcomes of patients with myelodysplastic syndromes treated with allogeneic hematopoietic stem cell transplantation

    Itonaga Hidehiro, Ishiyama Ken, Aoki Kazunari, Aoki Jun, Ishikawa Takayuki, Ohashi Kazuteru, Fukuda Takayuki, Ozawa Yukiyasu, Ota Shuichi, Uchida Naoyuki, Eto Tetsuya, Iwato Koji, Ohno Yuju, Takanashi Minoko, Ichinohe Tatsuo, Atsuta Yoshiko, Miyazaki Yasushi

    BONE MARROW TRANSPLANTATION   Vol. 54 ( 9 ) page: 1471 - 1481   2019.9

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    DOI: 10.1038/s41409-019-0469-5

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  195. Carbons for wearable devices - Commentary and introduction to the virtual special issue

    Yuan Chen, Liming Dai, Yutaka Ohno

    CARBON   Vol. 126   page: 621 - 623   2018.1

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    DOI: 10.1016/j.carbon.2017.09.079

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  196. Biallelic Mutations in KDSR Disrupt Ceramide Synthesis and Result in a Spectrum of Keratinization Disorders Associated with Thrombocytopenia

    Takeichi Takuya, Torrelo Antonio, Lee John Y. W., Ohno Yusuke, Luisa Lozano Maria, Kihara Akio, Liu Lu, Yasuda Yuka, Ishikawa Junko, Murase Takatoshi, Belen Rodrigo Ana, Fernandez-Crehuet Pablo, Toi Yoichiro, Mellerio Jemima, Rivera Jose, Vicente Vicente, Kelsell David P., Nishimura Yutaka, Okuno Yusuke, Kojima Daiei, Ogawa Yasushi, Sugiura Kazumitsu, Simpson Michael A., McLean W. H. Irwin, Akiyama Masashi, McGrath John A.

    JOURNAL OF INVESTIGATIVE DERMATOLOGY   Vol. 137 ( 11 ) page: 2344-2353   2017.11

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    DOI: 10.1016/j.jid.2017.06.028

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  197. Chitin-deacetylase activity induces appressorium differentiation in the rice blast fungus Magnaporthe oryzae

    Kuroki Misa, Okauchi Kana, Yoshida Sho, Ohno Yuko, Murata Sayaka, Nakajima Yuichi, Nozaka Akihito, Tanaka Nobukiyo, Nakajima Masahiro, Taguchi Hayao, Saitoh Ken-ichiro, Teraoka Tohru, Narukawa Megumi, Kamakura Takashi

    SCIENTIFIC REPORTS   Vol. 7   2017.8

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    DOI: 10.1038/s41598-017-10322-0

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  198. Highly stable perovskite solar cells with an all-carbon hole transport layer Reviewed

    F. Wang, M. Endo, S. Mouri. Y. Miyauchi, Y. Ohno, A. Wakamiya, Y. Murata, and K. Matsuda

    Nanoscale   Vol. 8 ( 23 ) page: 11882-11888   2016.5

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  199. Highly individual SWCNTs for high performance thin film electronics Reviewed

    A. Kaskela, P. Laiho, N. Fukaya, K. Mustonen, T. Susi, H. Jiang, N. Houbenov, Y. Ohno, and E. I. Kauppinen

    Carbon   Vol. 103   page: 228-234   2016.3

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  200. Toward the Limits of Uniformity of Mixed Metallicity SWCNT TFT Arrays with Spark-Synthesized and Surface-Density-Controlled Nanotube Networks Reviewed

    A. Kaskela, K. Mustonen, P. Laiho, Y. Ohno, and E. I. Kauppinen

    ACS Appl. Mater. Interfaces   Vol. 7 ( 51 ) page: 28134-28141   2015.12

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  201. Angular Sensitivity of VHF-Band CNT Antenna Reviewed

    H. Tanaka, Y. Ohno, and Y. Tadokoro

    IEEE Trans. Nanotechnol.   Vol. 14 ( 6 ) page: 1112-1116   2015.9

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  202. Overcoming the quality quantity tradeoff in dispersion and printing of carbon nanotubes by a repetitive dispersion extraction process Reviewed

    H. Shirae, D. Y. Kim, K. Hasegawa, T. Takenobu, Y. Ohno, and S. Noda

    Carbon   Vol. 91 ( 20 ) page: 29   2015.4

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  203. Printed, short-channel, top-gate carbon nanotube thin-film transistors on flexible plastic film Reviewed

    M. Maeda, J. Hirotani, R. Matsui, K. Higuchi, S. Kishimoto, T. Tomura, M. Takesue, K. Hata, and Y. Ohno

    Appl. Phys. Exp.   Vol. 8 ( 4 ) page: 045102   2015.3

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  204. Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers Reviewed

    F. Wang, D. Kozawa, Y. Miyauchi, K. Hiraoka, S. Mouri, Y. Ohno, and K. Matsuda

    Nature Commn.   Vol. 6   page: 6305   2015.2

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    DOI: 10.1038/ncomms7305

  205. Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers

    Wang Feijiu, Kozawa Daichi, Miyauchi Yuhei, Hiraoka Kazushi, Mouri Shinichiro, Ohno Yutaka, Matsuda Kazunari

    NATURE COMMUNICATIONS   Vol. 6   2015.2

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    DOI: 10.1038/ncomms7305

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  206. One-Step Sub-10 um Patterning of Carbon-Nanotube Thin Films for Transparent Conductor Applications

    N. Fukaya, D. Y. Kim, S. Kishimoto, S. Noda, and Y. Ohno

    ACS Nano   Vol. 8 ( 4 ) page: 3285-3293   2014.4

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  207. Fabrication of Single-Walled Carbon Nanotube/Si Heterojunction Solar Cells with High Photovoltaic Performance

    F. Wang, D. Kozawa, Y. Miyauchi, K. Hiraoka, S. Mouri, Y. Ohno, and K. Matsuda

    ACS Photonics   Vol. 1   page: 360-364   2014.3

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  208. Influence of ambient air on n-type carbon nanotube thin-film transistors chemically doped with polyethyleneimine

    T. Yasunishi, S. Kishimoto, and Y. Ohno

    Jpn. J. Appl. Phys.   Vol. 53   page: 05FD01   2014.3

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  209. Fabrication of high-mobility n-type carbon nanotube thin-film transistors on plastic film

    T. Yasunishi, S. Kishimoto, E. I. Kauppinen, and Y. Ohno

    phys. stat. sol (c)   Vol. 10 ( 11 ) page: 1612-1615   2013.10

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  210. An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry

    M. A. Hughes, K. P. Homewood, R. J. Curry, Y. Ohno, and T. Mizutani

    Appl. Phys. Lett.   Vol. 103 ( 10 ) page: 133508   2013.9

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  211. Mouldable all-carbon integrated circuits Reviewed

    D.-M. Sun, M. Y. Timmermans, A. Kaskela, A. G. Nasibulin, S. Kishimoto, T. Mizutani, E. I. Kauppinen, and Y. Ohno

    Nature Commun.   Vol. 4   page: 2302   2013.8

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  212. High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques Reviewed

    K. Higuchi, S. Kishimoto, Y. Nakajima, T. Tomura, M. Takesue, K. Hata, E. I. Kauppinen, and Y. Ohno

    Appl. Phys. Exp.   Vol. 6 ( 8 ) page: 085101   2013.7

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  213. Spatially Resolved Transport Properties of Pristine and Doped Single-Walled Carbon Nanotube Networks Reviewed

    A. Znidarsic, A. Kaskela, P. Laiho, M. Gaberscek, Y. Ohno, A. G. Nasibulin, E. I. Kauppinen, and A. Hassanien

    J. Phys. Chem. C   Vol. 117 ( 25 ) page: 13324-13330   2013.6

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  214. Investigation of Interface Charges of High-k Gate Dielectrics and Their Effects on Carbon Nanotube Field-Effect Transistors Reviewed

    K. Suzuki, Y. Ohno, S. Kishimoto, and T. Mizutani

    Appl. Phys. Exp.   Vol. 6 ( 2 ) page: 024002   2013.2

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  215. Electrical properties of carbon nanotube thin-film transistors fabricated using plasma-enhanced chemical vapor deposition measured by scanning probe microscopy Reviewed

    Y. Okigawa, S. Kishimoto, Y. Ohno, and T. Mizutani

    Nanotechnol.   Vol. 22 ( 19 ) page: 195202   2011.3

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  216. Flexible high-performance carbon nanotube integrated circuits Reviewed

    D.-M. Sun, M. Y. Timmermans, Y. Tian, A. G. Nasibulin, E. I. Kauppinen, S. Kishimoto, T. Mizutani, and Y. Ohno

    Nature Nanotechnology   Vol. 6   page: 156-161   2011.2

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  217. Thin Single-Walled Carbon Nanotubes with Narrow Diameter Distribution Grown by Cold-Wall Chemical Vapor Deposition Combined with Co Nanoparticle Deposition Reviewed

    S. Ishii, Y. Ohno, S. Kishimoto, and T. Mizutani

    Jpn. J. Appl. Phys.   Vol. 50   page: 015102   2011.1

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  218. Thin-Film Transistors with Length-Sorted DNA-Wrapped Single-Wall Carbon Nanotubes Reviewed

    Y. Asada, Y. Miyata, K. Shiozawa, Y. Ohno, R. Kitaura, T. Mizutani, and H. Shinohara

    J. Phys. Chem. C   Vol. 115 ( 1 ) page: 270-273   2011.1

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  219. Impact of fixed charges at interfaces on the operation of top-gate carbon nanotube field-effect transistors Reviewed

    Y. Ohno, N. Moriyama, S. Kishimoto, and T. Mizutani

    phys. stat. sol (c)   Vol. 8 ( 2 ) page: 567-569   2011.1

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  220. Improvement in alignment of single-walled carbon nanotubes grown on quartz substrate Reviewed

    K. Hata, Y. Ohno, S. Kishimoto, and T. Mizutani

    phys. stat. sol (c)   Vol. 8 ( 2 ) page: 561-563   2011.1

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  221. Carbon Nanotubes for VLSI: Interconnect and Transistor Applications Invited Reviewed

    Y. Awano, S. Sato, M. Nihei, T. Sakai, Y. Ohno, and T. Mizutani

    Proc. IEEE   Vol. 98 ( 12 ) page: 2015-2031   2010.10

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  222. Medium Scale Integrated Circuits Using Carbon Nanotube Thin Film Transistors Reviewed

    T. Mizutani, Y. Okigawa, Y. Ono, S. Kishimoto, and Y. Ohno

    Appl. Phys. Exp.   Vol. 3   page: 11510   2010.10

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  223. High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges Reviewed

    N. Moriyama, Y. Ohno, K. Suzuki, S. Kishimoto, and T. Mizutani

    Appl. Phys. Exp.   Vol. 3 ( 10 ) page: 105102   2010.10

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  224. High-Performance Thin-Film Transistors with DNA-Assisted Solution Processing of Isolated Single-Walled Carbon Nanotubes Reviewed

    Y. Asada, Y. Miyata, Y. Ohno, R. Kitaura, T. Sugai, T. Mizutani, and H. Shinohara

    Adv. Mater.   Vol. 22   page: 1-4   2010.6

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  225. Parametric Study of Alcohol Catalytic Chemical Vapor Deposition for Controlled Synthesis of Vertically Aligned Single-Walled Carbon Nanotubes Reviewed

    R. Xiang, E. Einarsson, J. Okawa, T. Thurakitseree, Y. Murakami, J. Shiomi, Y. Ohno, and S. Maruyama

    J. Nanosci. and Nanotechnol.   Vol. 10   page: 3901-3906   2010.6

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  226. Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges Reviewed

    N. Moriyama, Y. Ohno, T. Kitamura, S. Kishimoto, T. Mizutani

    Nanotechnol.   Vol. 21   page: 165201   2010.3

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  227. Thin film transistors using PECVD-grown carbon nanotubes Reviewed

    Y. Ono, S. Kishimoto, Y. Ohno, T. Mizutani

    Nanotechnol.   Vol. 21   page: 205202   2010.3

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  228. Parametric study of ACCVD for controlled synthesis of vartically aligned single-walled carbon nanotubes Reviewed

    R. Xiang, E. Einarsson, J. Okawa, T. Thurakitseree, Y. Murakami, J. Shiomi, Y. Ohno, S. Maruyama

    J. Nanoscience and Nanotechnology   Vol. 10 ( 6 ) page: 3901-3906   2010.2

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  229. Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy Reviewed

    Y. Okigawa, S. Kishimoto, Y. Ohno, T. Mizutani

    Jpn. J. Appl. Phys.   Vol. 49   page: 02BD02   2010.2

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  230. Fabrication Process of Carbon Nanotube Field Effect Transistors Using Atomic Layer Deposition Passivation for Biosensors Reviewed

    Y. Nakashima, Y. Ohno, S. Kishimoto, M. Okochi, H. Honda, T. Mizutani

    J Nanosci Nanotechnol   Vol. 10   page: 3805-3809   2010.2

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  231. A study of preferential growth of carbon nanotubes with semiconducting behavior grown by plasma-enhanced chemical vapor deposition Reviewed

    T. Mizutani, H. Ohnaka, Y. Okigawa, S. Kishimoto, Y. Ohno

    J. Appl. Phys.   Vol. 106   page: 073705   2009.10

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  232. カーボンナノチューブのフォトルミネッセンスにおける励起子遷移と周辺環境効果 Invited Reviewed

    大野雄高

    応用物理   Vol. 77 ( 6 ) page: 656-661   2008.6

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  233. High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method Reviewed

    D. Phokharatkul, Y. Ohno, H. Nakano, S. Kishimoto, T. Mizutani

    Appl. Phys. Lett.   Vol. 93   page: 53112   2008

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  234. Electrical properties of carbon nanotube FETs Invited Reviewed

    T. Mizutani, Y. Ohno, S. Kishimoto

      Vol. 7037   page: 703703-1-10   2008

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  235. Electrical properties of carbon nanotube FETs Reviewed

    T. Mizutani, Y. Nosho, and Y. Ohno

    J. Phys: Conf. Series   Vol. 109   page: 012002   2008

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  236. Potential profile measurement of carbon nanotube FETs based on the electrostatic force detection Reviewed

    Y. Okigawa, T. Umesaka, Y. Ohno, S. Kishimoto, and T. Mizutani

    NANO   Vol. 3   page: 51-54   2008

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  237. Fabrication of Carbon Nanotubes by Slot-Excited Microwave Plasma-Enhanced Chemical Vapor Deposition Reviewed

    G. I. Shim, Y. Kojima, S. Kono, Y. Ohno, and T. Ishijima

    Jpn. J. Appl. Phys.   Vol. 47   page: 5652   2008

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  238. Enhanced 1,520 nm Photoluminescence from Er3+ Ions in Di-Erbium-Carbide Metallofullerenes (Er2C2)@C82 (I,II,III) Reviewed

    Y. Ito, T. Okazaki, S. Ohkubo, M. Akachi, Y. Ohno, T. Mizutani, T. Nakamura, R. Kitaura, T. Sugai, H. Shinohara

    ACS NANO   Vol. 1   page: 456-462   2007.12

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  239. Excitonic transition energies in single-walled carbon nanotubes: Dependence on environmental dielectric constant Reviewed

    "Y. Ohno, S. Iwasaki, Y. Murakami, S. Kishimoto, S. Maruyama, and T. Mizutani"

      Vol. 244   page: 4002-4005   2007.8

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  240. Effects of chemical doping with F$_4$TCNQ in carbon nanotube field-effect transistors studied by transmission-line-model technique Reviewed

    "Y. Nosho, Y. Ohno, S. Kishimoto, and T. Mizutani"

      Vol. 18   page: 415202   2007.6

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  241. カーボンナノチューブの光電子機能デバイス応用 Reviewed

    大野雄高

    "マテリアルステージ,vol. 7, No. 4, pp. 33-36, 2007."   Vol. 7 ( 4 ) page: 33   2007.4

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  242. *カーボンナノチューブトランジスタにおける電極界面の特性 Reviewed

    大野雄高、能生陽介、水谷孝

    "表面科学,vol. 28, No. 1, pp. 40-45, 2007."   Vol. 28 ( 1 ) page: 40   2007.1

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  243. Surface Potential Measurement of Carbon Nanotube Field-Effect Transistors Using Kelvin Probe Force Microscopy Reviewed

    "T. Umesaka, H. Ohnaka, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani"

        2007

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  244. Evidencen of edge contact in carbon nanotube field-effect transistors Reviewed

    "Y. Nosho, Y. Ohno, S. Kishimoto, and T. Mizutani"

        2007

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  245. Environmental dielectric screening effect on exciton transition energies in single-walled carbon nanotubes Reviewed

    "Y. Ohno, S. Iwasaki, Y. Murakami, S. Kishimoto, S. Maruyama, and T. Mizutani"

        2007

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  246. Dependence of exciton transition energy of single-walled carbon nanotubes on surrounding dielectric materials Reviewed

    "Y. Miyauchi, R. Saito, K. Sato, Y. Ohno, S. Iwasaki, T. Mizutani, J. Jiang, S. Maruyama"

        2007

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  247. カーボンナノチューブのフォトルミネッセンス

    大野雄高、丸山茂夫、水谷孝

    "ナノ学会会報,vol. 4, No. 2, pp. 67-73, 2006."   Vol. 4 ( 2 ) page: 67   2006.3

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  248. カーボンナノチューブの光誘起電流分光とフォトルミネッセンス分光 ―光学的手法によるナノチューブFETの動作解析― Reviewed

    大野雄高

    "光技術コンタクト,vol. 44, No. 3, pp.152-157 (2006)."   Vol. 44 ( 3 ) page: 152   2006.3

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  249. *Chirality-dependent environmental effect in photoluminescence of single-walled carbon nanotubes Reviewed

    Y. Ohno, S. Iwasaki, Y. Murakami, S. Kishimoto, S. Maruyama, and T. Mizutani

      Vol. 73   page: 235427   2006

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  250. Photoluminescence of single-walled carbon nanotubes in field-effect transistors Reviewed

    "Y. Ohno, S. Kishimoto, and T. Mizutani"

        2006

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  251. Carrier transport property in single-walled carbon nanotubes studied by photoluminescence spectroscopy Reviewed

    "Y. Ohno, T. Shimada, S. Kishimoto, S. Maruyama, and T. Mizutani"

        2006

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  252. AlGaN/GaN High Electron Mobility Transistors with Inclined-Gate-Recess Structure Reviewed

    "Y. Aoi, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani"

        2006

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  253. Fabrication of antigen sensors using carbon nanotube field effect transistors Reviewed

    "K. Tani, H. Ito, Y. Ohno, S. Kishimoto, M. Okochi, H. Honda, and T. Mizutani"

        2006

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  254. Fabrication of carbon nanotube field effect transistors using plasma-enhanced chemical vapor deposition grown nanotubes Reviewed

    "H. Ohnaka, Y. Kojima, S. Kishimoto, Y. Ohno, and T. Mizutani"

        2006

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  255. Suppression of hysteresis in carbon nanotube field-effect transistors: Effect of contamination induced by device fabrication process Reviewed

    "H. Shimauchi, Y. Ohno, S. Kishimoto, and T. Mizutani"

        2006

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  256. Relation between conduction property and work function of contact metal in carbon nanotube field-effect transistors Reviewed

    Y. Nosho, Y. Ohno, S. Kishimoto, and T. Mizutani

      Vol. 17   page: 3412-3415   2006

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  257. カーボンナノチューブのトランジスタ応用 Reviewed

    大野雄高

    "ニューダイアモンド vol. 21, No. 3, p. 18, 2005"   Vol. 21 ( 3 ) page: 18   2005.6

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  258. *n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes Reviewed

    Y. Nosho, Y. Ohno, S. Kishimoto, and T. Mizutani

      Vol. 86   page: 073105   2005

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  259. AlGaN/GaN MIS-HEMTs with ZrO2 gate insulator Reviewed

    "T. Sugimoto, Y. Ohno, S. Kishimoto, K. Maezawa, J. Osaka, and T. Mizutani"

        2005

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  260. Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy Reviewed

    "K. Nakagami, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani"

        2005

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  261. Electron traps in AlGaN/GaN MIS-HEMTs observed by drain current DLTS Reviewed

    "T. Okino, Y. Ohno, S. Kishimoto, K. Maezawa, J. Osaka, and T. Mizutani"

        2005

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  262. Tunable Field-Effect Transisitor Device with Metallofullerene Nanopeapods Reviewed

    "T. Shimada,Y. Ohno, K. Suenaga,T. Okazaki, S. Kishimoto, T. Mizutani, R. Taniguchi, H. Kato, B. Cao, T. Sugai, H. Shinohara"

        2005

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  263. Synthesis of carbon nanotube peapods directly on Si substrates Reviewed

    "Y. Ohno, Y. Kurokawa, S. Kishimoto, T. Mizutani, T. Shimada, M. Ishida, T. Okazaki, H. Shinohara, Y. Murakami, S. Maruyama, A. Sakai, and K. Hiraga"

        2005

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  264. Deep levels in n-type AlGaN grown by hydride vapor-phase epitaxy on sapphire characterized by deep-level transient spectroscopy Reviewed

    "J. Osaka, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani"

        2005

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  265. Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters Reviewed

    "Y. Kojima, S. Kishimoto, Y. Ohno, and T. Mizutani"

        2005

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  266. Effects of fabrication process on current-voltage characteristics of carbon nanotube field-effect transistors Reviewed

    "T. Mizutani, S. Iwatsuki, Y. Ohno, and S. Kishimoto"

        2005

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  267. Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition Reviewed

    "S. Kishimoto, Y. Kojima, Y. Ohno, T. Sugai, H. Shinohara, and T. Mizutani"

        2005

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  268. Photoresponse of carbon nanotube field-effect transistors Reviewed

    "Y. Ohno, S. Kishimoto, and T. Mizutani"

        2005

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  269. Metamorphic resonant tunneling diodes and its application to chaos generator ICs Reviewed

    "K. Maezawa, T. Iwase, Y. Ohno, S. Kishimoto, and T. Mizutani"

        2005

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  270. Fabrication and characterization of carbon nanotube FETs Reviewed

    T. Mizutani and Y. Ohno

        2005

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  271. Fabrication and characterization of peapod field-effect transistors using peapods synthesized directly on Si substrate Reviewed

    "Y. Kurokawa, Y. Ohno, T. Shimada, M. Ishida, S. Kishimoto, T. Okazaki, H. Shinohara, and T. Mizutani"

        2005

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  272. Direct integration of GaAs HEMTs on AlN ceramic substrates using fluidic self-assembly Reviewed

    "I. Soga, S. Hayashi, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani"

        2005

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  273. Surface potential measurements of AlGaN/GaN high-electron-mobility transistors by Kelvin probe force microscopy Reviewed

    "K. Nakagami, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani"

        2004

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  274. Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics Reviewed

    "T. Shimada, T. Sugai, Y. Ohno, S. Iwatsuki, S. Kishimoto, T. Mizutani, H. Yoshida, T. Okazaki, and H. Shinohara"

        2004

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  275. "Transport properties of C78, C90 and Dy@C82 fullerenes-nanopeapods by field effect transistors" Reviewed

    "T. Shimada, Y. Ohno, T. Okazaki, T. Sugai, K. Suenaga, S. Iwatsuki, S. Kishimoto, T. Mizutani, T. Inoue, R. Taniguchi, N. Fukui, H. Okubo, H. Shinohara"

        2004

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  276. Direct Observation of High-Frequency Chaos Signal from the Resonant Tunneling Chaos Generator Reviewed

    "K. Maezawa, Y. Kawano, Y. Ohno, S. Kishimoto, and T. Mizutani"

        2004

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  277. Fabrication Technique for Carbon Nanotube Single Electron Transistors Using Focused Ion Beam Reviewed

    "Y. Kurokawa, Y. Ohno, S. Kishimoto, T. Okazaki, H. Shinohara, and T. Mizutani"

        2004

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  278. Drain Current DLTS of AlGaN-GaN MIS-HEMTs Reviewed

    "T. Okino, M. Ochiai, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani"

        2004

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  279. Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration Reviewed

    "I. Soga, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani"

        2004

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  280. Effect of surface passivation on breakdown of AlGaN/GaN HEMTs Reviewed

    "Y. Ohno, T. Nakao, S. Kishimoto, K. Maezawa, and T. Mizutani"

        2004

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  281. Chirality assignment of individual single-walled carbon nanotubes in carbon nanotube FETs by micro-photocurrent spectroscopy Reviewed

    "Y. Ohno, S. Kishimoto, T. Mizutani, T. Okazaki, and H. Shinohara"

        2004

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  282. 88 GHz dynamic 2:1 frequency divider using resonant tunnelling chaos circuit Reviewed

    "Y. Kawano, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, and K. Sano"

        2003

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  283. "Experimental demonstration of a resonant tunneling delta-sigma modulator for high-speed, high-resolution analog-to-digital converter" Reviewed

    "Y. Yokoyama, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani"

        2003

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  284. Electronic Properties of Gd@C82 Metallofullerene Peapods :(Gd@C82)n@SWNTs Reviewed

    "T. Okazaki, T. Shimada, K. Suenaga, Y. Ohno, T. Mizutani, J. Lee, Y. Kuk and H. Shinohara"

        2003

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  285. Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors Reviewed

    "T. Mizutani, H. Makihara, M. Akita, Y. Ohno, S. Kishimoto, and K. Maezawa"

        2003

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  286. *Position-Controlled Carbon Nanotube FETs Fabricated by CVD Synthesis Using Patterned Metal Catalyst Reviewed

    Y. Ohno, S. Iwatsuki, T. Hiraoka, T. Okazaki, S. Kishimoto, K. Maezawa, H. Shinohara, T. Mizutani

      Vol. 42 ( 6B ) page: 4116-4119   2003

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  287. Comparison of Electrical Chracteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs Reviewed

    "K. Kawada, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, M. Takakusaki, H. Nakata"

        2003

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  288. Fluidic Assembly of Thin GaAs Blocks on Si Substrates Reviewed

    "I. Soga, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani"

        2003

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  289. Chracterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN Reviewed

    "K. Kumada, T. Murata, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, N. Sawaki"

        2003

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  290. AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator Reviewed

    "M. Ochiai, M. Akita, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani"

        2003

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  291. A Study on Current Collapse in AlGaN/GaN HEMTs Induced by Bias Stress Reviewed

    "T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, K. Maezawa"

        2003

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  292. Study on Off-State Breakdown of AlGaN/GaN HEMTs Reviewed

    "T. Nakao, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani"

        2003

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  293. Drain Current DLTS of AlGaN/GaN HEMTs Reviewed

    "T. Mizutani, T. Okino, K. Kawada, Y. Ohno, S. Kishimoto, K. Maezawa"

        2003

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  294. Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film Reviewed

    "K. Sato, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani"

        2003

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  295. カーボンナノチューブトランジスタの可能性 Reviewed

    大野雄高、嶋田行志、岸本茂、岡崎俊也、篠原久典、水谷孝

    "ナノ学会会報 vol. 2, No. 1, pp. 17-21, Dec. 2003."   Vol. 2 ( 1 ) page: 17   2003

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  296. Experimental Demonstration of Capacitor-Coupled Resonant Tunneling Logic Gates for Ultra-short Gate-delay Operation Reviewed

    "T. Tanaka, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani"

        2003

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  297. Temperature Distribution in AlGaN/GaN HEMTs Measured by Micro-Raman Scattering Spectroscopy Reviewed

    "Y. Ohno, M. Akita, S. Kishimoto, K. Maezawa, T. Mizutani"

        2002

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  298. Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations Reviewed

    "T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, K. Maezawa"

        2002

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  299. Effects of the HEMT Parameters on the Operations Frequency of Resonant Tunneling Logic Gate MOBILE Reviewed

    "T. Aoyama, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani"

        2002

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  300. High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit Reviewed

    "Y. Kawano, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani"

        2002

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  301. 50 GHz Frequency Divider Using Resonant Tunneling Chaos Circuit Reviewed

    "Y. Kawano, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani"

        2002

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  302. Electroluminescence Distribution in AlGaN/GaN High Electron Mobility Transistors under High Bias Votlage Reviewed

    "T. Nakao, Y. Ohno, M. Akta, S. Kishimoto, K. Maezawa, T. Mizutani"

        2002

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  303. Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy Reviewed

    "Y. Ohno, M. Akta, S. Kishimoto, K. Maezawa, T. Mizutani"

        2002

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  304. Electroluminescence in AlGaN/GaN HEMTs Reviewed

    "Y. Ohno, T. Nakao, M. Akita, S. Kishimoto, K. Maezawa, T. Mizutani"

        2002

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  305. The Low-Frequency Noise Characteristics of AlGaN/GaN HEMTs Reviewed

    "H. Makihara, M. Akita, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani"

        2002

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  306. Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors Reviewed

    "S. Mizuno, Y. Ohno, S. Kishimoto, K. Maezawa and T. Mizutani"

        2002

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  307. Ambipolar Field-Effect Transistor Behavior of Gd@C82 Metallofullerene Peapods Reviewed

    "T. Shimada, T. Okazaki, R. Taniguchi, T. Sugai, H. Shinohara, K. Suenaga, Y. Ohno, S. Mizuno, S. Kishimoto, and T. Mizutani"

        2002

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  308. A delta-sigma modulator using resonant tunneling diodes Reviewed

    "Y. Yokoyama, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani"

        2001

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  309. Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in Thin AlGaAs Barrier Reviewed

    "Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani"

        2001

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  310. Observation of Resonant Tunneling through Single Self-Assembled InAs Quantum Dots using Electro-Photoluminescence Spectroscopy

    Journal of Applied Physics   Vol. 87 ( 9 ) page: 4332   2000

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  311. Photoluminescence Study of Resonant Tunneling Transistor with p+/n-Junction Gate

    Japanese Journal of Applied Physics   Vol. 39 ( 1 ) page: 35   2000

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  312. Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in Thin AlGaAs Barrier

        2000

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  313. Observation of Resonant Tunneling through Single Self-Assembled InAs Quantum Dots using Electro-Photoluminescence Spectroscopy Reviewed

    "Y. Ohno, K. Asaoka, S. Kishimoto, K. Maezawa, T. Mizutani"

        2000

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    Language:English   Publishing type:Research paper (scientific journal)  

  314. Photoluminescence Study of Resonant Tunneling Transistor with p+/n-Junction Gate Reviewed

    "Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, T. Akeyoshi"

        2000

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    Language:English   Publishing type:Research paper (scientific journal)  

  315. Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors

    Japanese Journal of Applied Physics   Vol. 38 ( 4 ) page: 2586   1999

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  316. Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors(共著)

    Japanese Journal of Applied Physics   Vol. 38 ( 3 ) page: 1363   1999

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  317. Obsevation of Resonant Tunneling through InAs Quantum Dots by Using Electro-Photoluminescence Spectroscopy

    11th International Conference on Indium Phosphide and Related Materials     1999

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  318. Photoluminescence Intensity Enhancement by Electron Beam Irradiation into GaAs Quantum Wells(共著)

    Solid State Electronics   Vol. 43   page: 147   1999

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  319. Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs(共著)

    Japanese Journal of Applied Physics   Vol. 38 ( 1B ) page: 546   1999

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  320. Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors Reviewed

    "Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, T. Akeyoshi"

        1999

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    Language:English   Publishing type:Research paper (scientific journal)  

  321. Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs Reviewed

    "K. Asaoka, Y. Ohno, S. Kishimoto, T. Mizutani"

        1999

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    Language:English   Publishing type:Research paper (scientific journal)  

  322. Photoluminescence Intensity Enhancement by Electron Beam Irradiation into GaAs Quantum Wells Reviewed

    "T. Murata, Y. Ohno, S. Kishimoto, T. Mizutani"

        1999

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    Language:English   Publishing type:Research paper (scientific journal)  

  323. Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors Reviewed

    "H. Niwa, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, H. Yamazaki, T. Taniguchi"

        1999

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  324. Photoluminescence Study of Resonant Tunneling Transistor

    1997 IEEE International Symposium on Compound Semiconductors Institute of Physics Publishing, Bristol and Philadelphia   Vol. 97TH ( 8272 ) page: 613   1998

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  325. Photolumineseence Intensity Enhancement Caused by Electron Beam Irradiation into AlGaAs/GaAs Quantum Wells

    1998 International Symposium on Compaund Semiconductors     1998

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    Authorship:Lead author   Language:English  

  326. Electroluminescence Measurement of n+-Self-Alighed Gate GaAs MESFETs

    Japanese Journal of Applied Physics   Vol. 37   page: 1343   1998

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  327. Ultranarrow Luminescence Lines from Single InAs Quantum Dots Grown on a GaAs Substrate

    1998 Microprocesses and Nanotechnology Conference     1998

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    Authorship:Lead author   Language:English  

  328. Microscopic PL Study of InAs Single Quantem Dots Groun on(100)GaAs (共著)

    Second International Symposium on Formation, Physics and Deuce Application of Quantum Dots Structure, 1998     page: 184   1998

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    Authorship:Lead author   Language:English  

  329. Logic Gate for optical Input using Monostable-Bistable Transition of Serially Connected Resonant Tennelling Transistors

    Electronics Letters   Vol. 34 ( 3 ) page: 250   1998

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  330. Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors

    1998 International Conference on Solid State Devices and Materials     page: 348   1998

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  331. Logic Gate for Optical Input Using Monostable-Bistable Transition of Serially Connected Resonant Tunnelling Transistors Reviewed

    "Y. Ohno, S. Kishimoto, T. Mizutani, T. Akeyoshi"

        1998

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    Language:English   Publishing type:Research paper (scientific journal)  

  332. Electroluminescence Measurement of n+ Self-Aligned Gate GaAs MESFETs Reviewed

    "H. Niwa, Y. Ohno, S. Kishimoto, T. Mizutani, H. Yamazaki, T. Taniguchi"

        1998

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    Language:English   Publishing type:Research paper (scientific journal)  

  333. Electroluminescence Measuromeut of n+Self-Aligned GaAs MESFETs

    1997 International Conference on Solid State Devices and Materials     1997

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    Authorship:Lead author   Language:English  

  334. Photoluminescence Study of Resonant-Tunneling Transistor Reviewed

    "Y. Ohno, S. Kishimoto, T. Mizutani, T. Akeyoshi"

        1997

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  335. Operation Speed Consideration of Resonant Tunneling Logic Gate Based on Circuit Simulation Reviewed

    "Y. Ohno, S. Kishimoto, T. Mizutani, K. Maezawa"

        1996

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▼display all

Books 34

  1. High-mobility thin-film transistors for flexible electronics applications

    Ohno Y.

    Frontiers of Graphene and Carbon Nanotubes: Devices and Applications  2015.1  ( ISBN:9784431553717

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    Language:Japanese

    Flexible and stretchable electronics are attracting much attention because of the variety of potential applications from flexible e-papers though wearable healthcare devices. Among various kinds of electronic materials, carbon nanotube thin films have advantages in flexibility, stretchability, and performance because of the excellent electronic and mechanical properties. Low-cost manufacturing of flexible devices is also possible with good processability of carbon nanotube films. In this chapter, recent topics and progresses on flexible electronics based on carbon nanotube thin films are introduced, including high-mobility carbon nanotube thin-film transistors (TFTs) and integrated circuits (ICs) on a transparent plastic film, all-carbon ICs demonstrating excellent stretchability and moldability. The high-speed printing process to fabricate CNT TFTs, which enables low-cost manufacturing of large-area flexible devices, is also introduced.

    DOI: 10.1007/978-4-431-55372-4_18

    Scopus

  2. 共鳴トンネル論理素子の動作解析と共鳴トンネル構造の評価に関する研究

    大野 雄高

    [出版者不明]  2000 

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    Language:Japanese

    CiNii Books

  3. グラフェン から広がる二次元物質の新技術と応用:電解液流体による起電力の発生と応用

    Adha Sukma Aji, 大野雄高( Role: Joint author)

    エヌ・ティー・エス  2020.8 

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    Total pages:8   Responsible for pages:221-228  

  4. 原子層材料 - 原子一層の厚さをもつ新しい超薄膜材料 Reviewed

    大野雄高

    学士会会報  2018.5 

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    Total pages:5   Responsible for pages:77-81  

  5. High-Mobility Thin-Film Transistors for Flexible Electronics Applications, Frontiers of Grapheme and Carbon Nanotubes, K. Matsumoto Ed.

    Y. Ohno( Role: Sole author)

    Springer  2015.5 

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    Language:English Book type:Scholarly book

  6. High-Mobility Thin-Film Transistors for Flexible Electronics Applications, Frontiers of Grapheme and Carbon Nanotubes, K. Matsumoto Ed.

    Y. Ohno( Role: Sole author)

    Springer  2015.5 

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    Responsible for pages:269-283   Language:English Book type:Scholarly book

  7. 透明で柔軟なオールカーボン電子デバイス

    大野雄高( Role: Sole author)

    応用物理  2015.4 

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    Total pages:5   Language:Japanese

  8. 透明で柔軟なオールカーボン電子デバイス

    大野雄高( Role: Sole author)

    応用物理  2015.4 

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    Total pages:5   Responsible for pages:142-145   Language:Japanese

  9. CNT薄膜による柔軟で透明な集積デバイスの開発

    大野雄高( Role: Sole author)

    カーボンナノチューブ応用最前線,シーエムシー出版  2014.6 

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    Language:Japanese

  10. CNT薄膜による柔軟で透明な集積デバイスの開発

    大野雄高( Role: Sole author)

    カーボンナノチューブ応用最前線,シーエムシー出版  2014.6 

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    Responsible for pages:311-317   Language:Japanese

  11. カーボンナノチューブ薄膜で実現した柔軟で透明な集積回路

    大野雄高( Role: Sole author)

    マテリアルステージ  2014.5 

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    Language:Japanese

  12. カーボンナノチューブ薄膜で実現した柔軟で透明な集積回路

    大野雄高( Role: Sole author)

    マテリアルステージ  2014.5 

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    Responsible for pages:54-57   Language:Japanese

  13. rue Nanoの世界:カーボンナノチューブ:特異な物性を活かした電子デバイス

    大野雄高( Role: Sole author)

    パリティ  2014.4 

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    Language:Japanese Book type:General book, introductory book for general audience

  14. rue Nanoの世界:カーボンナノチューブ:特異な物性を活かした電子デバイス

    大野雄高( Role: Sole author)

    パリティ  2014.4 

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    Responsible for pages:18-21   Language:Japanese Book type:General book, introductory book for general audience

  15. 極めて柔軟で透明な全カーボン集積回路

    大野雄高( Role: Sole author)

    ニューダイヤモンド  2014.1 

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  16. 極めて柔軟で透明な全カーボン集積回路

    大野雄高( Role: Sole author)

    ニューダイヤモンド  2014.1 

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    Responsible for pages:24-27   Language:Japanese

  17. 透明で柔軟な全カーボン集積回路―任意の立体形状に加熱成形も可能―

    大野雄高( Role: Sole author)

    工業材料  2014.1 

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  18. 透明で柔軟な全カーボン集積回路―任意の立体形状に加熱成形も可能―

    大野雄高( Role: Sole author)

    工業材料  2014.1 

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    Responsible for pages:36-37   Language:Japanese

  19. ナノ材料がもたらす革新的エレクトロニクスと省エネルギー製造技術

    大野雄高( Role: Sole author)

    名古屋大学 名大トピック  2013.12 

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  20. ナノ材料がもたらす革新的エレクトロニクスと省エネルギー製造技術

    大野雄高( Role: Sole author)

    名古屋大学 名大トピック  2013.12 

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    Responsible for pages:16-17   Language:Japanese

  21. 新材料が築く電子デバイスの新しいスタイル

    大野雄高( Role: Sole author)

    名古屋大学 PRESS e  2013.12 

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  22. 新材料が築く電子デバイスの新しいスタイル

    大野雄高( Role: Sole author)

    名古屋大学 PRESS e  2013.12 

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    Responsible for pages:17   Language:Japanese

  23. 特別寄稿)カーボンナノチューブ薄膜のフレキシブルエレクトロニクス応用

    大野雄高( Role: Sole author)

    バンドーテクニカルレポート  2013.3 

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  24. 特別寄稿)カーボンナノチューブ薄膜のフレキシブルエレクトロニクス応用

    大野雄高( Role: Sole author)

    バンドーテクニカルレポート  2013.3 

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    Responsible for pages:2-10   Language:Japanese

  25. プラスチック基板上へのカーボンナノチューブ集積回路形成技術

    大野雄高( Role: Sole author)

    2013ナノカーボン技術大全 電子ジャーナル  2012.11 

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  26. プラスチック基板上へのカーボンナノチューブ集積回路形成技術

    大野雄高( Role: Sole author)

    2013ナノカーボン技術大全 電子ジャーナル  2012.11 

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    Responsible for pages:34-37   Language:Japanese

  27. 12章 新しい機能材料(3) ナノ材料:微細構造で発現する機能と魅力, 新インターユニバーシティー 電気電子材料 鈴置保雄編

    大野雄高( Role: Sole author)

    オーム社  2010.9 

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  28. 12章 新しい機能材料(3) ナノ材料:微細構造で発現する機能と魅力, 新インターユニバーシティー 電気電子材料 鈴置保雄編

    大野雄高( Role: Sole author)

    オーム社  2010.9 

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    Responsible for pages:143-154   Language:Japanese

  29. Environmental effects on photoluminescence of single-walled carbon nanotubes, Chapter 6 in "Carbon Nanotube" edited by J M Marulanda

    ( Role: Joint author)

    2010.3 

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  30. Environmental effects on photoluminescence of single-walled carbon nanotubes, Chapter 6 in "Carbon Nanotube" edited by J M Marulanda

    Yutaka Ohno, Shigeru Maruyama, Takashi Mizutani( Role: Joint author)

    In-Tech, Vukovar, Croatia  2010.3 

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    Responsible for pages:109-121   Language:English

  31. Carbon Nanotubes: Multifunctional Materials, Chapter 4 Carbon Nanotube Field Effect Transistors

    T. Mizutani, Y. Ohno, P. R. Somani( Role: Joint author)

    Applied Science Innovations Private Limited, India  2008.12 

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  32. Carbon Nanotubes: Multifunctional Materials, Chapter 4 Carbon Nanotube Field Effect Transistors

    T. Mizutani, Y. Ohno, P. R. Somani( Role: Joint author)

    Applied Science Innovations Private Limited, India  2008.12 

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    Responsible for pages:116-180   Language:English

  33. 金属内包フラーレン・ピーポットのデバイス応用

    大野雄高( Role: Sole author)

    "化学フロンティア「ナノカーボンの新展開」編集 篠原久典, 4章"  2005 

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  34. 金属内包フラーレン・ピーポットのデバイス応用

    大野雄高( Role: Sole author)

    "化学フロンティア「ナノカーボンの新展開」編集 篠原久典, 4章"  2005 

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    Responsible for pages:1   Language:Japanese

▼display all

Presentations 1042

  1. Carbon nanotube-based nanomechanical receiver for digital data transfer Invited International conference

    K. Funayama, H. Tanaka, J. Hirotani, K. Shimaoka, Y. Ohno, and Y. Tadokoro

    The 62nd Fullerenes-Nanotubes-Graphene General Symposium  2022.3.5 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Online  

  2. カーボンナノチューブのフレキシブル電子デバイス応用 Invited

    大野雄高

    第15回ナノカーボン実用化WG 特別講演会  2021.4.16 

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    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  3. カーボンナノチューブの半導体応用の展開 Invited

    大野雄高

    日本物理学会2021年秋季大会  2021.9.21 

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    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  4. カーボンナノチューブ関連の最近の動向について Invited

    大野雄高

    SDRJ 2021年度 第3回BC・MtM合同委員会  2021.9.28 

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  5. CNT薄膜を用いた透明・伸縮性を有する摩擦帯電型発電シート  Invited

    大野雄高

    新たな環境発電技術の研究開発動向  2021.10.20 

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    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  6. Carbon nanotube-based stretchable and transparent triboelectric nanogenerator toward wearable electronics Invited

    松永正広,川口敦司,廣谷潤,大野雄高

    第31回日本MRS年次大会  2021.12.14 

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  7. Carbon Nanotube-based Analog/Digital Mixed-signal Integrated Circuits for Flexible Sensors Invited International conference

    T. Kashima and Y. Ohno

    The 11th International Conference on Flexible and Printed Electronics  2021.9.30 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Online  

  8. Carbon nanotube technologies for flexible electronics Invited International conference

    Y. Ohno

    34th International Microprocesses and Nanotechnology Conference  2021.10.27 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Online  

  9. Design and fabrication of flexible analog/digital mixed-signal circuits based on carbon nanotube thin film transistors Invited International conference

    T. Kashima and Y. Ohno

    The International Conference on Materials and Systems for Sustainability 2021  2021.11.5 

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    Venue:Online  

  10. Carbon nanotube-based flexible electronics Invited International conference

    Y. Ohno

    The 2021 International Chemical Congress of Pacific Basin Societies  2021.12.18 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Online  

  11. Design and fabrication of flexible analog/digital mixed-signal circuits based on carbon nanotube thin film transistors Invited International conference

    Y. Ohno

    11th A3 Symposium on Emersing Materials: Nanomaterials for Electronics, Energy and Environment  2021.2.15 

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    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Online  

  12. CNT/HfO2/CNT memristor with high on-off ratio for neuromorphic computing International conference

    A. S. Aji, Y. Ohno

    The 60th Anniversary Fullerenes-Nanotubes-Graphene General Symposium  2021.3.3 

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    Event date: 2021.3

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya, Japan  

  13. Self-aligned hybrid quantum structure of diamond nitrogen-vacancy center and carbon nanotube for electrical control of quantum states International conference

    H. Uchiyama, S. Kishimoto, J. Ishi-Hayase, and Y. Ohno

    The 60th Fullerenes-Nanotubes-Graphene General Symposium  2021.3.2 

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    Event date: 2021.3

    Language:English   Presentation type:Poster presentation  

    Venue:Online  

  14. Scattering parameter analysis of self-aligned flexible carbon nanotube thin-film transistors  International conference

    S. Ishimaru, T. Kashima, H. Kataura, Y. Ohno

    The 60th Anniversary Fullerenes-Nanotubes-Graphene General Symposium  2021.3.1 

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    Event date: 2021.3

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya, Japan  

  15. カーボンナノチューブ薄膜を用いたエネルギーハーベスティングデバイス  Invited

    大野雄高

    システムナノ技術に関する特別研究専門委員会 第1回研究会「科学技術イノベーションを創成する先進システムナノ技術」  2021.1.29 

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    Event date: 2021.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  16. Linearization of output from nanoelectromechanical systems by optimally combined high-order harmonics International conference

    K. Funayama, H. Tanaka, J. Hirotani, K. Shimaoka, Y. Ohno, Y. Tadokoro

    The 34th IEEE International Conference on Micro Electro Mechanical systems (MEMS2021)  2021.1.28 

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    Event date: 2021.1

    Language:English   Presentation type:Poster presentation  

    Venue:Online  

  17. MoS2 Nanogenerators: Harvesting Energy from Droplet Movement Invited International conference

    Y. Ohno

    AAPPSS Bulletin Lecture Series 2020  2020.12.4 

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    Event date: 2020.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Online  

  18. Energy Harvesting Technologies Based on Low-Dimensional Materials for Self-Powered Sensing Devices Invited International conference

    Y. Ohno

    2020 MRS spring Meeting  2020.11.21 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Online  

  19. Simple and highly efficient intermittent operation circuit for triboelectric nanogenerator International conference

    A. Kawaguchi, M. Matsunaga, H. Uchiyama, J. Hirotani, Y. Ohno

    The 59th Fullerenes-Nanotubes-Graphene General Symposium  2020.9.18 

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    Event date: 2020.9

    Language:English   Presentation type:Poster presentation  

    Venue:Online  

  20. Operation speed enhancement in carbon nanotube thin film transistors by self-aligned process International conference

    S. Ishimaru, T. Kashima, H. Kataura, Y. Ohno

    The 59th Fullerenes-Nanotubes-Graphene General Symposium  2020.9.18 

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    Event date: 2020.9

    Language:English   Presentation type:Poster presentation  

    Venue:Online  

  21. Temperature dependence of Raman G-band shift in defective single-walled carbon nanotubes International conference

    M. Endo, H. Uchiyama, Y. Ohno, J. Hirotani

    The 59th Fullerenes-Nanotubes-Graphene General Symposium  2020.9.18 

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    Event date: 2020.9

    Language:English   Presentation type:Poster presentation  

    Venue:Online  

  22. カーボンナノチューブに基づく柔軟なアナログ/デジタル集積回路 Invited

    大野雄高

    第84回半導体・集積回路技術シンポジウム  2020.9.15 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  23. 自己整合プロセスにより作製したカーボンナノチューブ薄膜トランジスタの動作速度評価

    石丸紗椰,鹿嶋大雅,片浦弘道,大野雄高

    第81回応用物理学会秋季学術講演会  2020.9.11 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  24. カーボンナノチューブの半導体応用 Invited

    大野雄高

    FNTGウェビナー  2020.7.14 

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    Event date: 2020.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  25. カーボンナノチューブのフレキシブルエレクトロニクス応用 Invited

    大野雄高

    電気化学会第87回大会  2020.3.19 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋工業大学  

  26. 低次元材料による微小エネルギーの利用と超低消費電力センサシステムの検討 Invited

    大野雄高

    ナノカーボン研究会  2020.2.14 

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    Event date: 2020.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:福島  

  27. カーボンナノチューブ薄膜を利用したフレキシブルセンサの開発 Invited

    大野雄高

    技術情報協会セミナー「伸縮性導電材料」  2020.1.8 

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    Event date: 2020.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京  

  28. Contrast enhancement in optically-detected magnetic resonance of diamond nitrogen-vacancy centers in the vicinity of electrode International conference

    H. Uchiyama, S. Saijo, S. Kishimoto, J. Ishi-Hayase, and Y. Ohno

    International Symposium on Hybrid Quantum Systems 2019  2019.12.2 

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    Event date: 2019.12

    Venue:Matsue, Japan  

  29. Suppression of Hysteresis in Flexible Carbon Nanotube Thin-film Transistors International conference

    Y. Shimasaki, J. Hirotani, S. Kishimoto, Y. Ohno

    International Conference on Materials and Systems for Sustainability  2019.11.2 

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    Event date: 2019.11

    Venue:Nagoya University  

  30. Enhancement in electrochemical activity of (1179) carbon nanotube electrodes of voltage generator based on streaming potential International conference

    Y.Ando, R.Nishi, S.Kishimoto and Y.Ohno

    International Conference on Materials and Systems for Sustainability  2019.11.2 

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    Event date: 2019.11

    Venue:Nagoya University  

  31. Effect of surface layer on charge state control of diamond NV centers International conference

    A.Osaki, H. Uchiyama, M. Inaba, S. Kishimoto and Y Ohno

    International Conference on Materials and Systems for Sustainability  2019.11.2 

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    Event date: 2019.11

    Venue:Nagoya University  

  32. Higly-strechable low-voltage carbon nanotube thin film transistors and integrated circuits International conference

    Y. Ohno

    The 10th A3 Symposium on Emerging Materials : Nanomaterials for Electronics, Energy and Environment  2019.10.27 

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    Event date: 2019.10

    Presentation type:Oral presentation (invited, special)  

    Venue:Sungkyunkwan University, Korea  

  33. フレキシブルなエレクトレット/摩擦帯電ハイブリッド発電シート

    松永正広,廣谷潤,岸本茂,大野雄高

    第80回応用物理学会秋季学術講演会  2019.9.21 

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    Event date: 2019.9

    Venue:北海道大学  

  34. カーボンナノチューブ電子デバイスの進展と将来展望

    大野雄高

    第80回応用物理学会秋季学術講演会  2019.9.20 

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    Event date: 2019.9

    Presentation type:Oral presentation (invited, special)  

    Venue:北海道大学  

  35. フレキシブルカーボンナノチューブ薄膜トランジスタのヒステリシス抑制

    嶋﨑悠斗、廣谷潤、岸本茂、大野雄高

    第80回応用物理学会 秋季学術講演会  2019.9.18 

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    Event date: 2019.9

    Venue:北海道大学  

  36. Simultaneous operando measurement of magnetic field and temperature of electron devices under operation using nitrogen-vacancy centers International conference

    H. Uchiyama, S. Saijo, S. Kishimoto, J. Ishi-Hayase, and Y. Ohno

    30th International Conference on Diamond and Carbon Materials  2019.9.10 

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    Event date: 2019.9

    Venue:Seville, Spain  

  37. Self-powered wireless optical transmitter based on triboelectric generator with carbon nanotube thin film International conference

    M. Matsunaga, J. Hirotani, S. Kishimoto, and Y. Ohno

    The 57th Fullerenes-Nanotubes-Graphene General Symposium  2019.9.5 

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    Event date: 2019.9

    Venue:Nagoya, Japan  

  38. Low-voltage operable, ultra-stretchable carbon nanotube thin film transistors and integrated circuits International conference

    Y. Ohno

    2019 International Meeting on Information Display  2019.8.28 

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    Event date: 2019.8

    Presentation type:Oral presentation (invited, special)  

    Venue:Gyeongju, Korea  

  39. Threshold voltage tuning by controlled doping for low-voltage complementary carbon nanotube integrated circuits on flexible substrate International conference

    FW. Tan, J. Hirotani, Y. Nonoguchi, S. Kishimoto, Y. Ohno

    20th International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials  2019.7.25 

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    Event date: 2019.7

    Venue:Wurzburg, Germany  

  40. Carbon nanotubes for wearable electronics applications International conference

    Y. Ohno

    14th International Conference on Advanced Carbon Nano Structures  2019.7.5 

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    Event date: 2019.7

    Presentation type:Oral presentation (invited, special)  

    Venue:Saint-Petersburg, Russia  

  41. Carbon Nanotube-Based Stretchable Devices for Wearable Electronics International conference

    Y. Ohno

    International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials  2019.6.26 

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    Event date: 2019.6

    Presentation type:Oral presentation (invited, special)  

    Venue:Wurzburg, Germany  

  42. Flexible Free-Standing-Mode Triboelectric Generator Realized by Surface Modification International conference

    M. Matsunaga, J. Hirotani, S. Kishimoto, and Y. Ohno

    20th International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials  2019.6.23 

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    Event date: 2019.6

    Venue:Wurzburg, Germany  

  43. 接地電極の不要なカーボンナノチューブ摩擦帯電型発電シート

    松永正広,廣谷潤,岸本茂,大野雄高

    第66回応用物理学会春季学術講演会  2019.3.11 

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    Event date: 2019.3

    Venue:東京工業大学  

  44. 低電圧駆動かつ伸縮可能なカーボンナノチューブ集積回路

    西尾祐哉,鹿嶋大雅,廣谷潤,岸本茂,大野雄高

    第66回応用物理学会春季学術講演会  2019.3.11 

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    Event date: 2019.3

    Venue:東京工業大学  

  45. Large voltage generator from water movement by single-layer MoS2

    Aji Adha Sukma,  西涼平,  吾郷浩樹, 大野雄高

    第66回応用物理学会春季学術講演会  2019.3.11 

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    Event date: 2019.3

    Venue:東京工業大学  

  46. カーボンナノチューブ薄膜を用いた柔軟なエネルギーハーベスティングデバイス

    大野雄高

    化学工学会・反応工学部会・CVD反応分科会 第30回シンポジウム「熱電・圧電関係エネルギーハーベスティング技術の最新動向」  2019.3.5 

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    Event date: 2019.3

    Presentation type:Oral presentation (invited, special)  

    Venue:東京大学  

  47. Low-voltage operable and stretchable carbon nanotube integrated circuits International conference

    Y. Nishio, T. Kashima, J. Hirotani, S. Kishimoto, and Y. Ohno

    The 56th Fullerenes-Nanotubes-Graphene General Symposium  2019.3.4 

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    Event date: 2019.3

    Venue:Tokyo, Japan  

  48. Low-voltage operable complementary carbon nanotube thin-film transistors with threshold tuning by controlled doping on plastic substrate International conference

    F-W. Tan, J. Hirotani, S. Kishimoto, and Y. Ohno

    The 56th Fullerenes-Nanotubes-Graphene General Symposium  2019.3.4 

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    Event date: 2019.3

    Venue:Tokyo, Japan  

  49. Single-layer MoS 2 as large voltage generator driven by liquid motion International conference

    A. Aji, R. Nishi, H. Ago, Y. Ohno

    The 56th Fullerenes-Nanotubes-Graphene General Symposium  2019.3.3 

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    Event date: 2019.3

    Venue:Tokyo, Japan  

  50. Free-standing mode triboelectric generators with carbon nanotube thin film International conference

    M. Matsunaga, J. Hirotani, S. Kishimoto, and Y. Ohno

    The 56th Fullerenes-Nanotubes-Graphene General Symposium  2019.3.3 

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    Event date: 2019.3

    Venue:東京大学  

  51. Carbon nanotube thin films for wearable electronics application International conference

    Y. Ohno

    1&2DM  2019.1.29 

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    Event date: 2019.1

    Presentation type:Oral presentation (invited, special)  

    Venue:Tokyo  

  52. An interdigitated electrode with dense carbon nanotube forests on conductive supports for electrochemical biosensors International conference

    H. Sugime, T. Ushiyama, K. Nishimura, Y. Ohno, and S. Noda

    1&2DM  2019.1.29 

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    Event date: 2019.1

    Venue:Tokyo  

  53. カーボンナノチューブ導電膜の特徴とフレキシブルデバイス応用の可能性

    大野雄高

    新化学技術推進協会 電子情報技術部会 エレクトロニクス交流会 講演会「フレキシブルデバイスの要素技術最新動向」  2019.1.24 

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    Event date: 2019.1

    Presentation type:Oral presentation (invited, special)  

    Venue:東京大学  

  54. Tailoring of electronic properties of SWCNT films International conference

    O. Zaremba, Y. Nishio, A. Goldt, A. Tsapenko, Y. Ohno, and A. Nasibulin

    III International Workshop on Electromagnetic Properties of Novel Materials  2018.12.18 

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    Event date: 2018.12

    Venue:Moscow, Russia  

  55. Flexible Carbon Nanotube ICs for Wearable Electronics: Transistor technologies, Circuit Design Tools, and Analog IC design and Fabrication International conference

    Y. Ohno

    MRS Fall Meeting  2018.11.30 

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    Event date: 2018.11

    Presentation type:Oral presentation (invited, special)  

    Venue:Boston, USA  

  56. Low-voltage Operable, Highly-stretchable Carbon Nanotube Thin-Film Transistors with Novel Local Strain Control Structure International conference

    Y. Nishio, J. Hirotani, S. Kishimoto, and Y. Ohno

    MRS Fall Meeting  2018.11.29 

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    Event date: 2018.11

    Venue:Boston, USA  

  57. 真空ギャップゲート構造による2次元正孔ガスダイヤモンドデバイスの評価

    稲葉優文、川原田洋、大野雄高

    第32回ダイヤモンドシンポジウム  2018.11.15 

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    Event date: 2018.11

    Venue:電気通信大学  

  58. ダイヤモンドの表面終端処理における表面層の影響

    大﨑朗,内山晴貴,稲葉優文,岸本茂,大野雄高

    第32回ダイヤモンドシンポジウム  2018.11.14 

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    Event date: 2018.11

    Venue:電気通信大学  

  59. Wearable Triboelectric Generator Based on Carbon Nanotube Thin Film International conference

    M. Matsunaga, J. Hirotani, S. Kishimoto, and Y. Ohno

    9th A3 Symposium on Emerging Materials: Nanomaterials for Electronics, Energy, and Environment  2018.10.30 

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    Event date: 2018.10

    Venue:Kyoto, Japan  

  60. Carbon Nanotube-Based Flexible Devices for Wearable Sensor System International conference

    Y. Ohno

    9th A3 Symposium on Emerging Materials: Nanomaterials for Electronics, Energy, and Environment  2018.10.30 

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    Event date: 2018.10

    Presentation type:Oral presentation (invited, special)  

    Venue:Kyoto, Japan  

  61. Design and fabrication of carbon nanotube flexible analog ICs International conference

    T. Kashima, J. Hirotani, S. Kishimoto, and Y. Ohno

    9th A3 Symposium on Emerging Materials: Nanomaterials for Electronics, Energy, and Environment  2018.10.30 

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    Event date: 2018.10

    Venue:Kyoto, Japan  

  62. Carbon Nanotube-Based Flexible Devices for Wearable Sensor System International conference

    Y. Ohno

    AsiaNano 2018  2018.10.19 

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    Event date: 2018.10

    Presentation type:Oral presentation (invited, special)  

    Venue:Qingdao, China  

  63. Carbon Nanotube-Based Flexible Electronics: Transistors, Integrated Circuits, Biosensors, and Energy harvesters for Wearable Devices International conference

    Y. Ohno

    International Conference on Innovative Research in Science, Technology and Management  2018.9.29 

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    Event date: 2018.9

    Presentation type:Oral presentation (invited, special)  

    Venue:Singapore  

  64. カーボンナノチューブ薄膜上を移動する電解液滴からの発電: 大面積半導体薄膜を用いた高出力化

    西涼平、廣谷潤、岸本茂、片浦弘道、大野雄高

    第79回応用物理学会秋季学術講演会  2018.9.21 

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    Event date: 2018.9

    Venue:名古屋国際会議場  

  65. カーボンナノチューブ薄膜表面を流れる連続流体による発電現象の考察

    安藤優月、西涼平、岸本茂、片浦弘道、大野雄高

    第79回応用物理学会秋季学術講演会  2018.9.21 

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    Event date: 2018.9

    Venue:名古屋国際会議場  

  66. 局所歪み制御層を有する低電圧駆動かつ大伸縮可能なカーボンナノチューブ薄膜トランジスタ

    西尾祐哉、西村圭太、廣谷潤、岸本茂、大野雄高

    第79回応用物理学会秋季学術講演会  2018.9.19 

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    Event date: 2018.9

    Venue:名古屋国際会議場  

  67. カーボンナノチューブ薄膜を電極として用いた透明で伸縮性のある 摩擦帯電型発電シート

    松永正広,廣谷潤,岸本茂,大野雄高

    第79回応用物理学会秋季学術講演会  2018.9.19 

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    Event date: 2018.9

    Venue:名古屋国際会議場  

  68. 鹿嶋大雅、廣谷潤、岸本茂、大野雄高

    カーボンナノチューブアナログ集積回路の設計と試作

    第79回応用物理学会秋季学術講演会  2018.9.18 

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    Event date: 2018.9

    Venue:名古屋国際会議場  

  69. Flexible and transparent energy harvesters with carbon nanotube thin films International conference

    Y. Ohno

    The 55th Fullerenes-Nanotubes-Graphene General Symposium  2018.9.13 

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    Event date: 2018.9

    Presentation type:Oral presentation (invited, special)  

    Venue:Sendai, Japan  

  70. Investigation on mechanism of voltage generation by continuous flow of fluid on surface of carbon nanotube thin film International conference

    Y. Ando, R. Nishi, J. Hirotani, S. Kishimoto, H, Kataura, and Y. Ohno

    The 55th Fullerenes-Nanotubes-Graphene General Symposium  2018.9.13 

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    Event date: 2018.9

    Venue:Sendai, Japan  

  71. Design and fabrication of carbon nanotube analog integrated circuits International conference

    T. Kashima, J. Hirotani, S. Kishimoto, and Y. Ohno

    The 55th Fullerenes-Nanotubes-Graphene General Symposium  2018.9.13 

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    Event date: 2018.9

    Venue:Sendai, Japan  

  72. Passivation with Parylene-C in Carbon Nanotube Thin-film Transistors International conference

    Y. Shimasaki, J. Hirotani, S. Kishimoto, and Y. Ohno

    The 55th Fullerenes-Nanotubes-Graphene General Symposium  2018.9.13 

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    Event date: 2018.9

    Venue:Sendai, Japan  

  73. Local strain control for realization of low-voltage operable, highly-stretchable carbon nanotube thin-film transistors International conference

    Y. Nishio, J. Hirotani, S. Kishimoto, Y. Ohno

    The 55th Fullerenes-Nanotubes-Graphene General Symposium  2018.9.12 

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    Event date: 2018.9

    Venue:Sendai, Japan  

  74. Triboelectric generator with carbon nanotube thin film for wearable electronics International conference

    M. Matsunaga, J. Hirotani, S. Kishimoto, and Y. Ohno

    The 55th Fullerenes-Nanotubes-Graphene General Symposium  2018.9.11 

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    Event date: 2018.9

    Venue:Sendai, Japan  

  75. Enhancement of breakdown voltage of H-terminated diamond FETs with field-plate structure International conference

    T. Okamura, M. Inaba, S. Kishimoto, and Y. Ohno

    International Conference on Diamond and Carbon Materials  2018.9.4 

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    Event date: 2018.9

    Venue:Dubrovnik, Croatia  

  76. Carbon nanotube-based analog circuits for wearable sensor applications: Device modeling, circuit desing and fabrication International conference

    Y. Ohno

    International Workshop on Nanocarbon Photonics and Optoelectronics  2018.8.9 

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    Event date: 2018.8

    Presentation type:Oral presentation (invited, special)  

    Venue:Savonlinna, Finland  

  77. High-output, transparent and stretchable triboelectric generator with carbon nanotube thin film International conference

    M. Matsunaga, J. Hirotani, S. Kishimoto, and Y. Ohno

    Zao 18 meeting  2018.8.1 

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    Event date: 2018.8

    Venue:Yamagata, Japan  

  78. High-Performance, Transparent and Stretchable Triboelectric Generator with Carbon Nanotube Thin Film International conference

    M. Matsunaga, J. Hirotani, S. Kishimoto, and Y. Ohno

    19th International Conference on the Science and Application of Nanotubes and Low-dimentional Materials  2018.7.19 

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    Event date: 2018.7

    Venue:Beijing, China  

  79. Voltage generation of sub-1V from raindrops with transparent, flexible semiconducting carbon nanotube sheet International conference

    R. Nishi, J. Hirotani, S. Kishimoto, H. Kataura, Y. Ohno

    19th International Conference on the Science and Application of Nanotubes and Low-dimentional Materials  2018.7.18 

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    Event date: 2018.7

    Venue:Peking University  

  80. Self-align process with backside exposure to minimize parasitic capacitance of CNT TFTs on transparent flexible film International conference

    T. Kashima, J. Hirotani, S. Kishimoto, and Y. Ohno

    19th International Conference on the Science and Application of Nanotubes and Low-dimentional Materials  2018.7.18 

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    Event date: 2018.7

    Venue:Beijing, China  

  81. Carbon nanotube TFTs, ICs, energy harversters for wearable sensor devices: Device modeling, circuit design tools, and fabrication International conference

    Y. Ohno

    19th International Conference on the Science and Application of Nanotubes and Low-dimensional Materials  2018.7.15 

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    Event date: 2018.7

    Presentation type:Oral presentation (invited, special)  

    Venue:Peking, China  

  82. カーボンナノチューブ薄膜のエレクトロニクス応用

    大野雄高

    グラフェンコンソーシアム第17回研究講演会  2018.7.10 

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    Event date: 2018.7

    Presentation type:Oral presentation (invited, special)  

    Venue:秋葉原コンベンションホール  

  83. Effect of surface functionalization in carbon-nanotube electrochemical sensors on plastic substrate International conference

    K. Nishimura, S. Kishimoto and Y. Ohno

    28th Anniversary World Congress on Biosensors  2018.6.13 

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    Event date: 2018.6

    Venue:Miami, USA  

  84. CNT薄膜による透明で柔軟な集積デバイス

    大野雄高

    学振第186委員会・第27回研究会  2018.5.9 

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    Event date: 2018.5

    Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学  

  85. Carbon nanotube-based flexible electronics for wearable devices International conference

    Y. Ohno

    2018 International Forum on Graphene  2018.4.14 

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    Event date: 2018.4

    Presentation type:Oral presentation (invited, special)  

    Venue:Shenzhen, China  

  86. カーボンナノチューブ分散液中の水溶性ポリマー迅速除去法の開発

    上野和樹、大町遼、小室智彦、廣谷潤、大野雄高、篠原久典

    第65回応用物理学会春季学術講演会  2018.3.19 

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    Event date: 2018.3

    Venue:早稲田大学  

  87. 自己整合プロセスによるカーボンナノチューブ薄膜トランジスタの作製と評価

    鹿嶋大雅,松浦智紀,廣谷潤,岸本茂,大野雄高

    第65回応用物理学会春季学術講演会  2018.3.17 

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    Event date: 2018.3

    Venue:早稲田大学 西早稲田キャンパス  

  88. カーボンナノチューブ薄膜を用いた流体からの発電 : 出力のキャリア密度依存性

    西涼平、廣谷潤、岸本茂、片浦弘道、大野雄高

    第65回応用物理学会春季学術講演会  2018.3.17 

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    Event date: 2018.3

    Venue:早稲田大学  

  89. 高密度カーボンナノチューブフォレストを用いた櫛型電極の開発と電気化学バイオセンサへの応用

    杉目恒志、牛山拓也、西村圭太、大野雄高、野田優

    第65回応用物理学会春季学術講演会  2018.3.17 

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    Event date: 2018.3

    Venue:早稲田大学  

  90. カーボンナノチューブ薄膜を用いた透明でフレキシブルな摩擦帯電型発電シート

    松永正広,廣谷潤,岸本茂,大野雄高

    第65回応用物理学会春季学術講演会  2018.3.17 

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    Event date: 2018.3

    Venue:早稲田大学  

  91. Fabrication and characterization of self-aligned carbon nanotube thin film transistors

    鹿嶋大雅,松浦智紀,廣谷潤,岸本茂,大野雄高

    第54回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2018.3.12 

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    Event date: 2018.3

    Venue:東京大学  

  92. カーボンナノチューブ分散液中の水溶性ポリマー迅速除去法の開発

    上野和樹, 大町遼, 小室智彦, 廣谷潤, 大野雄高, 篠原久典

    第54回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2018.3.12 

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    Event date: 2018.3

    Venue:東京大学  

  93. Voltage generation by electrolyte droplet on carbon nanotube thin film: Dependence of output power on carrier density

    西涼平、廣谷潤、岸本茂、片浦弘道、大野雄高

    第54回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2018.3.11 

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    Event date: 2018.3

    Venue:東京大学  

  94. Fast characterization of FC-CVD nanotubes using an array of transistors International conference

    N. Wei, P. Laiho, S. Ahmed, A. Hussain, Q. Zhang, T. Khan, Y. Liao, Y. Tian, E.-X. Ding, Y. Ohno, E. I. Kauppinen

    The 54th Fullerenes-Nanotubes-Graphene General Symposium  2018.3.10 

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    Event date: 2018.3

    Venue:Tokyo, Japan  

  95. Carbon-nanotube differential amplifier on flexible substrate International conference

    T. Matsuura, T. Kashima, J. Hirotani, S. Kishimoto, and Y. Ohno

    The 54th Fullerenes-Nanotubes-Graphene General Symposium  2018.3.10 

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    Event date: 2018.3

    Venue:Tokyo, Japan  

  96. Transparent and flexible triboelectric generator based on carbon nanotube

    松永正広,廣谷潤,岸本茂,大野雄高

    第54回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2018.3.10 

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    Event date: 2018.3

    Venue:東京大学  

  97. 高密度カーボンナノチューブフォレストを用いた櫛型電極の開発と電気化学バイオセンサへの応用

    杉目恒志, 牛山拓也, 西村圭太, 大野雄高, 野田優

    第54回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2018.3.10 

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    Event date: 2018.3

    Venue:東京大学  

  98. フレキシブル基板上カーボンナノチューブアナログ集積回路の設計と作製

    松浦 智紀, 鹿嶋 大雅, 廣谷 潤, 岸本 茂, 大野 雄高

    電子情報通信学会電子デバイス研究会  2018.2.28 

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    Event date: 2018.2

    Venue:北海道大学 百年記念会館 大会議室  

  99. カーボンナノチューブを用いた流体発電の発電機構の理解と高出力化

    西涼平、岸本茂、片浦弘道、大野雄高

    電子情報通信学会電子デバイス研究会  2018.2.28 

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    Event date: 2018.2

    Venue:北海道大学百年記念会館大会議室  

  100. ウェアラブルセンサの実現に向けた柔軟なカーボンナノチューブアナログ集積回路の設計と試作

    大野雄高

    ATI第2回ナノカーボン研究会  2018.2.12 

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    Event date: 2018.2

    Presentation type:Oral presentation (invited, special)  

    Venue:野地温泉ホテル  

  101. Carbon nanotube-based flexible electronics: TFTs, ICs, and biosensors International conference

    Y. Ohno

    Nanomaterials for biomedical applications: Magnetic nanoparticles and carbon nanotubes as enhancers for targeted RNA delivery in vivo  2017.12.4 

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    Event date: 2017.12

    Presentation type:Oral presentation (invited, special)  

    Venue:Moscow, Russia  

  102. リモートプラズマCVDによる高均一吸着ナノダイヤモンドからのダイヤモンド膜の形成

    稲葉優文,内山春貴,星野晴華,費文茜,川原田洋,大野雄高

    第31回ダイヤモンドシンポジウム  2017.11.21 

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    Event date: 2017.11

    Venue:関西学院大学  

  103. カーボンナノチューブ薄膜によるフレキシブルデバイス

    大野雄高

    応用物理学会関西支部 平成29年度第2回講演会  2017.11.17 

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    Event date: 2017.11

    Presentation type:Oral presentation (invited, special)  

    Venue:京都大学桂キャンパス  

  104. Highly-sensitive, flexible electrochemical biosensor based on carbon nanotube thin film International conference

    Y. Ohno

    The 12th Asian Conference on Chemical Sensors  2017.11.14 

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    Event date: 2017.11

    Presentation type:Oral presentation (invited, special)  

    Venue:Hanoi, Vietnam  

  105. Large voltage generation by movement of electrolyte droplet on carbon nanotube thin film International conference

    Y. Ohno

    Japan-India Joint Seminar  2017.11.9 

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    Event date: 2017.11

    Presentation type:Oral presentation (invited, special)  

    Venue:Nagoya, Japan  

  106. Flexible devices based on carbon nanotube thin films International conference

    Y. Ohno

    India-Japan Joint Symposium  2017.11.9 

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    Event date: 2017.11

    Presentation type:Oral presentation (invited, special)  

    Venue:Nagoya, Japan  

  107. カーボンナノチューブに基づくフレキシブルデバイス

    大野雄高

    「次世代デバイス実現に向けた先端二次元物質の物理と化学」第6回研究会  2017.11.7 

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    Event date: 2017.11

    Presentation type:Oral presentation (invited, special)  

    Venue:ウインクあいち  

  108. Carbon Nanotubes for Wearable Electronics: Transistors, Circuits, Sensors, and Energy Harvesting Devices International conference

    Y. Ohno

    The 8th A3 Symposium on Emerging Materials  2017.10.27 

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    Event date: 2017.10

    Presentation type:Oral presentation (invited, special)  

    Venue:Suzhou, China  

  109. Flexible voltage generator based on movement of electrolyte droplet on carbon nanotube thin film International conference

    Y. Ohno

    JSAP-KPS Joint Symposium  2017.10.26 

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    Event date: 2017.10

    Presentation type:Oral presentation (invited, special)  

    Venue:Gyeongju, Korea  

  110. Measurement of current distribution in electron devices with nitrogen-vacancy centers in nanodiamond thin film International conference

    H. Uchiyama, S. Kishimoto, and Y. Ohno

    8th A3 Symposium on Emerging Materials: Nanomaterials for Energy and Electronics  2017.10.26 

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    Event date: 2017.10

    Venue:Suzhou, China  

  111. Carbon Nanotube-based Flexible/Stretchable Devices on Polymer Films for Wearable Electronics International conference

    Y. Ohno

    The 25th Annual World Forum on Advanced Materials (POLYCHAR 25)  2017.10.12 

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    Event date: 2017.10

    Presentation type:Oral presentation (invited, special)  

    Venue:Kuala Lumpur, Malaysia  

  112. Enhancement of Hole Injection in AlGaN-based DUV LEDs with Carbon Nanotube Electrode by Electrostatic Doping International conference

    M. Soda, S. Kishimoto, H. Amano, and Y. Ohno

    International Conference on Materials and Systems for Sustainability 2017  2017.9.30 

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    Event date: 2017.9

    Venue:Nagoya, Japan  

  113. Flexible bio-electronics based on carbon nanotube thin films International conference

    Y. Ohno

    Nano and Giga Challenges in Electronics, Photonics and Renewable Energy  2017.9.21 

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    Event date: 2017.9

    Presentation type:Oral presentation (invited, special)  

    Venue:Tomsk, Russia  

  114. Effect of surface functionalization in carbon nanotube electrochemical sensors

    西村圭太,岸本茂,大野雄高

    第53回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2017.9.15 

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    Event date: 2017.9

    Venue:京都大学 宇治おうばくプラザ  

  115. Voltage generation by electrolyte droplet on carbon nanotube thin film: Significant enhamcement of voltage

    西涼平、安西智洋、岸本茂、片浦弘道、大野雄高

    第53回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2017.9.14 

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    Event date: 2017.9

    Venue:京都大学 宇治おうばくプラザ  

  116. Modeling of carbon nanotube thin film transistors and its application for circuit design including characteristic variations

    鹿嶋大雅,松浦智紀,廣谷潤,岸本茂,大野雄高

    第53回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2017.9.13 

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    Event date: 2017.9

    Venue:京都大学 宇治おうばくプラザ  

  117. 官能基修飾によるカーボンナノチューブ電気化学センサの電子交換速度の向上

    西村圭太,岸本茂,大野雄高

    第78回応用物理学会秋季学術講演会  2017.9.7 

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    Event date: 2017.9

    Venue:福岡国際会議場  

  118. ナノダイヤモンド薄膜を用いた電流センシング

    内山晴貴,岸本茂,大野雄高

    第78回応用物理学会秋季学術講演会  2017.9.6 

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    Event date: 2017.9

    Venue:福岡国際会議場  

  119. カーボンナノチューブ薄膜を用いた流体からの発電:シャント抵抗の増大による起電力の向上

    西涼平、安西智洋、岸本茂、片浦弘道、大野雄高

    第78回応用物理学会秋季学術講演会  2017.9.6 

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    Event date: 2017.9

    Venue:福岡国際会議場  

  120. カーボンナノチューブ薄膜トランジスタのモデル化とその集積回路設計への適応

    鹿嶋大雅,松浦智紀,廣谷潤,岸本茂,大野雄高

    第78回応用物理学会秋季学術講演会  2017.9.6 

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    Event date: 2017.9

    Venue:福岡国際会議場  

  121. Flexible thin-film transistors and biosensors based on carbon nanotubes for wearable health monitoring devices International conference

    Y. Ohno

    International Symposium on Nanocarbon Materials  2017.9.1 

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    Event date: 2017.9

    Presentation type:Oral presentation (invited, special)  

    Venue:Espoo, Finland  

  122. High-yield fabrication of stable n-type carbon nanotube thin-film transistors on flexible substrate International conference

    FW. Tan, J. Hirotani, T. Yasunishi, S. Kishimoto, Y. Ohno

    International Conference on Materials and Systems for Sustainability  2017.8.30 

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    Event date: 2017.8

    Venue:Nagoya, Japan  

  123. Enhancement of hole injection by electrostatically-doped carbon nanotube electrode in AlGaN-based DUV LEDs International conference

    M. Soda, S. Kishimoto, H. Amano, and Y. Ohno

    12th International Conference on Nitride Semiconductors  2017.7.25 

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    Event date: 2017.7

    Venue:Strasbourg, France  

  124. Carbon nanotube thin film devices for wearable electronics International conference

    Y. Ohno

    Japan-India Joint Seminar  2017.7.5 

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    Event date: 2017.7

    Presentation type:Oral presentation (invited, special)  

    Venue:Geyongju, Korea  

  125. Large-scale fabrication of p- an n-CNT TFTs and their modeling for integration International conference

    F.-W. Tan, T. Kashima, T. Matsuura, J. Hirotani, S. Kishimoto, and Y. Ohno

    5th Carbon Nanotube Thin Film Electronics and Applications Satelite Symposium  2017.6.30 

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    Event date: 2017.6

    Venue:Belo Horizonte, Brazil  

  126. Selective detection of neurotransmitters by adsorption voltammetry with carbon nanotube thin film International conference

    T. Ushiyama, S. Kishimoto, and Y. Ohno

    18th International Conference on the Science and Application of Nanotubes and Low-dimentional Materi  2017.6.29 

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    Event date: 2017.6

    Venue:Belo Horizonte, Brazil  

  127. Modeling of flexible carbon nanotube thin-film transistors International conference

    T. Kashima, T. Matsuura, J. Hirotani, S. Kishimoto, and Y. Ohno

    18th International Conference on the Science and Application of Nanotubes and Low-dimentional Materials  2017.6.29 

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    Event date: 2017.6

    Venue:Belo Horizonte, Brazil  

  128. カーボンナノチューブの電子デバイス応用

    大野雄高

    電子情報通信学会総合大会  2017.3.22 

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    Event date: 2017.3

    Presentation type:Oral presentation (invited, special)  

    Venue:名古屋  

  129. カーボンナノチューブ薄膜電極をもつ深紫外LEDの作製と評価-電界効果ドーピングによる正孔注入効率の向上-

    曽田充俊, 岸本茂,天野浩,大野雄高 

    第64回応用物理学会春季学術講演会  2017.3.16 

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    Event date: 2017.3

    Venue:パシフィコ横浜  

  130. カーボンナノチューブ薄膜トランジスタのモデル化と回路シミュレーション

    松浦 智紀, 鹿嶋 大雅, 廣谷 潤, 岸本 茂, 大野 雄高

    第64回応用物理学会春季学術講演会  2017.3.15 

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    Event date: 2017.3

    Venue:パシフィコ横浜  

  131. フィールドプレート構造の導入による水素終端表面ダイヤモンド電界効果型トランジスタの高耐圧化の検討

    岡村卓弥,岸本茂,大野雄高

    第64回応用物理学会春季学術講演会  2017.3.14 

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    Event date: 2017.3

    Venue:パシフィコ横浜  

  132. Modeling of carbon nanotube thin-film transistor on flexible plastic film

    鹿嶋大雅,松浦智紀,廣谷潤,岸本茂,大野雄高

    第52回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2017.3.3 

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    Event date: 2017.3

    Venue:東京大学  

  133. Selective detection of neurotransmitters by adsorption voltammetry with carbon nanotube film

    T. Ushiyama, S. Kishimoto and Y. Ohno

    第52回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2017.3.3 

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    Event date: 2017.3

    Venue:東京大学  

  134. Yields of carbon nanotube integrated circuits on flexible plastic film

    J. Hirotani, S. Kishimoto and Y. Ohno

    第52回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2017.3.3 

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    Event date: 2017.3

    Venue:東京大学  

  135. Doping effect of electrolyte droplet on carbon nanotube thin film

    Tomohiro Yasunishi, Shigeru Kishimoto, Yutaka Ohno

    第52回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2017.3.1 

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    Event date: 2017.3

    Venue:東京大学  

  136. カーボンナノチューブ薄膜/電解質液体界面の相互作用を用いた発電素子の評価

    安西 智洋, 岸本 茂, 大野 雄高

    電子情報通信学会電子デバイス研究会  2017.2.24 

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    Event date: 2017.2

    Venue:北海道大学  

  137. カーボンナノチューブ薄膜を用いた神経伝達物質の高感度な電気化学的検出

    牛山拓也, Nguyen Xuan Viet, 岸本茂, 大野雄高

    電子情報通信学会電子デバイス研究会  2017.2.24 

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    Event date: 2017.2

    Venue:北海道大学  

  138. カーボンナノチューブに基づくフレキシブルデバイス

    大野雄高

    応用電子物性分科会  2017.1.30 

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    Event date: 2017.1

    Presentation type:Oral presentation (invited, special)  

    Venue:大阪  

  139. Flexible/stretchable devices based on carbon nanotube thin films International conference

    Y. Ohno

    IDW/AD'16  2016.12.9 

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    Event date: 2016.12

    Presentation type:Oral presentation (invited, special)  

    Venue:Fukuoka, Japan  

  140. Flexible/stretchable devices based on carbon nanotubes for wearable electronics International conference

    Y. Ohno

    MRS Fall Meeting  2016.12.1 

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    Event date: 2016.12

    Presentation type:Oral presentation (invited, special)  

    Venue:Boston, USA  

  141. Flexible electronics applications of carbon nanotubes International conference

    Y. Ohno

    International Symposium on Carbon Nanotube in Commemoration of its Quarter-Century Anniversary  2016.11.15 

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    Event date: 2016.11

    Presentation type:Oral presentation (invited, special)  

    Venue:Tokyo, Japan  

  142. Bio-electronics applications of carbon nanotube thin films International conference

    Y. Ohno

    7th A3 Symposium on Emerging Materials: Nanomaterials for Electronics, Energy and Environment  2016.11.2 

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    Event date: 2016.11

    Presentation type:Oral presentation (invited, special)  

    Venue:Buyeo, Korea  

  143. Voltage generation of carbon nanotube thin film by movement of electrolyte solution International conference

    T. Yasunishi, R. Nishi, S. Kishimoto, and Y. Ohno

    The 7th A3 Symposium on Emerging Materials: Nanomaterials for Electronics, Energy and Environment  2016.10.31 

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    Event date: 2016.10

    Venue:Buyeo, Korea  

  144. All-Carbon Integrated Circuits for Flexible/Stretchable Electronics International conference

    Y. Ohno

    PRiME2016  2016.10.5 

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    Event date: 2016.10

    Presentation type:Oral presentation (invited, special)  

    Venue:Honolulu, USA  

  145. High-Yield Fabrication of n-Type Carbon Nanotube Thin-Film Transistors on Plastic Substrate International conference

    F.-W. Tan, J. Hirotani, T. Yasunishi, S. Kishimoto, and Y. Ohno

    2016 International Conference on Solid State Devices and Materials  2016.9.28 

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    Event date: 2016.9

    Venue:Tsukuba, Japan  

  146. High-yield fabrication of n-type carbon nanotube thin-film transistors on flexible plastic film

    F.-W. Tan, J. Hirotani, T. Yasunishi, S. Kishimoto, and Y. Ohno

    第77回応用物理学会秋季学術講演会  2016.9.15 

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    Event date: 2016.9

    Venue:朱鷺メッセ  

  147. カーボンナノチューブのフレキシブルデバイス応用

    大野雄高

    半導体・集積回路シンポジウム  2016.9.15 

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    Event date: 2016.9

    Presentation type:Oral presentation (invited, special)  

    Venue:い  

  148. カーボンナノチューブのフレキシブルデバイス応用

    大野雄高

    高分子討論会  2016.9.15 

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    Event date: 2016.9

    Presentation type:Oral presentation (invited, special)  

    Venue:神奈川大学  

  149. カーボンナノチューブ電極を用いた新規吸着ボルタンメトリーによるドーパミンの高感度検出

    牛山拓也,岸本茂,大野雄高

    第77回応用物理学会秋季学術講演会  2016.9.14 

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    Event date: 2016.9

    Venue:朱鷺メッセ  

  150. バイオセンシグに向けたカーボンナノチュ-ブ薄膜トラジスタの評価

    長谷川加奈, Nguyen Xuan Viet, 牛山拓也, 岸本茂, 大野雄高

    第77回応用物理学会秋季学術講演会  2016.9.14 

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    Event date: 2016.9

    Venue:朱鷺メッセ  

  151. High-yield fabrication of n-type carbon nanotube thin-film transistors on flexible plastic substrate International conference

    FW. Tan, J. Hirotani, T. Yasunishi, S. Kishimoto, Y. Ohno

    51st Fullerenes-Nanotube-Graphene General Symposium  2016.9.9 

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    Event date: 2016.9

    Venue:Sapporo, Japan  

  152. Response to pH of carbon nanotube thin-film transistors for sensor applications

    K. Hasegawa, Nguyen Xuan Viet, T. Ushiyama, S. Kishimoto and Y. Ohno

    第51回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2016.9.9 

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    Event date: 2016.9

    Venue:北海道立道民活動センター かでる2・7  

  153. High-yield fabrication of n-type carbon nanotube thin-film transistors on flexible plastic substrate

    F.-W. Tan, J. Hirotani, T. Yasunishi, S. Kishimoto, and Y. Ohno

    第51回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2016.9.9 

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    Event date: 2016.9

    Venue:北海道立道民活動センター かでる2・7  

  154. Novel method to detect dopamine with high sensitivity based on adsorption onto carbon nanotube surface

    T. Ushiyama, S. Kishimoto and Y. Ohno

    第51回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2016.9.8 

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    Event date: 2016.9

    Venue:北海道立道民活動センター かでる2・7  

  155. カーボンナノチューブ電気化学センサを用いたドーパミンの高感度検出

    牛山拓也, Nguyen Xuan Viet, 岸本茂, 大野雄高

    第5回ナノカーボンバイオシンポジウム  2016.9.6 

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    Event date: 2016.9

    Venue:北海道立道民活動センター かでる2・7  

  156. ウェアラブルエレクトロニクスを目指した柔軟性/伸縮性を持つカーボンナノチューブ集積回路

    大野雄高

    半導体・集積回路シンポジウム  2016.8.22 

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    Event date: 2016.8

    Presentation type:Oral presentation (invited, special)  

    Venue:東京理科大学  

  157. Flexible carbon nanotube interdigitated electrode for electrochemical biosensors International conference

    T. Ushiyama, N. X. Viet, S. Kishimoto and Y. Ohno

    7th Symposium on Carbon Nanomaterials Biology, Medicine & Toxicology  2016.8.13 

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    Event date: 2016.8

    Venue:University of Vienna, Austria  

  158. The voltage generation by movement of electrolyte solution on carbon nanotube thin film International conference

    T. Yasunishi, S. Kishimoto and Y. Ohno

    4th Carbon Nanotube Thin Film Electronics and Applications Satellite  2016.8.13 

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    Event date: 2016.8

    Venue:University of Vienna, Austria  

  159. Transparent and stretchable all-carbon nanotube thin-film transistors for wearable electronics International conference

    Takeo Onishi, Jun Hirotani, Shigeru Kishimoto, and Yutaka Ohno

    4th Carbon Nanotube Thin Film Electronics and Applications Satellite  2016.8.13 

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    Event date: 2016.8

    Venue:University of Vienna, Austria  

  160. Wearable bio-electronics applications of carbon nanotube thin films International conference

    Y. Ohno

    Seventeenth International Conference on the Science and Application of Nanotubes and Low-dimensional Materials  2016.8.11 

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    Event date: 2016.8

    Presentation type:Oral presentation (invited, special)  

    Venue:Vienna, Austria  

  161. Flexible carbon nanotube interdigitated electrode for electrochemical biosensors International conference

    T. Ushiyama, N. X. Viet, S. Kishimoto and Y. Ohno

    The Seventeenth International Conference on the Science and Applications of Nanotubes and Low-dimensional Materials  2016.8.8 

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    Event date: 2016.8

    Venue:University of Vienna, Austria  

  162. Fabrication and characterization of all-carbon nanotube thin-film transistors on stretchable substrates International conference

    Takeo Onishi, Jun Hirotani, Shigeru Kishimoto, and Yutaka Ohno

    The Seventeenth International Conference on the Science and Applications of Nanotubes and Low-dimensional Materials  2016.8.8 

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    Event date: 2016.8

    Venue:University of Vienna, Austria  

  163. The voltage generation by movement of electrolyte solution on carbon nanotube thin film International conference

    T. Yasunishi, S. Kishimoto and Y. Ohno

    The Seventeenth International Conference on the Science and Applications of Nanotubes and Low-dimensional Materials  2016.8.8 

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    Event date: 2016.8

    Venue:University of Vienna, Austria  

  164. Wearable bio-electronics applications of carbon nanotube thin films International conference

    Y. Ohno

    The Fifth International Workshop on Nanocarbon Photonics and Optoelectronics  2016.8.4 

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    Event date: 2016.8

    Presentation type:Oral presentation (invited, special)  

    Venue:Imatra, Finland  

  165. Characteristic variation of carbon nanotube thin-film transistors

    J. Hirotani, F.-W. Tan, T. Yasunishi, S. Kishimoto and Y. Ohno

    蔵王16研究会  2016.7.19 

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    Event date: 2016.7

    Venue:タカミヤ瑠璃倶楽リゾート  

  166. Characteristic variation of carbon nanotube thin-film transistors

    J. Hirotani, F.-W. Tan, T. Yasunishi, S. Kishimoto and Y. Ohno

    蔵王16研究会  2016.7.19 

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    Event date: 2016.7

    Venue:タカミヤ瑠璃倶楽リゾート  

  167. Enhancement in sensitivity of CNT thin-film electrochemical biosensors

    Y. Ohno

    蔵王16研究会  2016.7.19 

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    Event date: 2016.7

    Presentation type:Oral presentation (invited, special)  

    Venue:タカミヤ瑠璃倶楽リゾート  

  168. 透明で伸縮可能な全カーボン薄膜トランジスタの作製と評価

    大西健夫,廣谷潤,岸本茂,大野雄高

    第63回応用物理学会春季学術講演会  2016.3.21 

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    Event date: 2016.3

    Venue:東京工業大学  

  169. 清浄表面を持つカーボンナノチューブ櫛形電極の作製と評価

    牛山拓也, Nguyen Xuan Viet, 岸本茂, 大野雄高

    第63回応用物理学会春季学術講演会  2016.3.19 

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    Event date: 2016.3

    Venue:東京工業大学  

  170. プラスチックフィルム上に作製した カーボンナノチューブ薄膜トランジスタの大規模特性評価

    廣谷潤,岸本茂,大野雄高

    電子情報通信学会電子デバイス研究会  2016.3.4 

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    Event date: 2016.3

    Venue:北海道大学  

  171. Characterization of carbon nanotube interdigitated electrode for electrochemical biosensors

    T. Ushiyama, N. X. Viet, S. Kishimoto and Y. Ohno

    第50回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2016.2.21 

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    Event date: 2016.2

    Venue:東京大学伊藤国際学術研究センター  

  172. Transparent, stretchable all-carbon nanotube thin-film transistors for wearable electronics

    Takeo Onishi, Jun Hirotani, Shigeru Kishimoto, and Yutaka Ohno

    第50回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2016.2.20 

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    Event date: 2016.2

    Venue:東京大学伊藤国際学術研究センター  

  173. 電気化学バイオセンサのためのカーボンナノチューブ櫛形電極の作製と評価

    牛山拓也, Nguyen Xuan Viet, 岸本茂, 大野雄高

    第4回ナノカーボンバイオシンポジウム  2016.2.19 

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    Event date: 2016.2

    Venue:東京大学伊藤国際学術研究センター  

  174. Bio-electronics applications of carbon nanotube thin film International conference

    Y. Ohno

    The International Chemical Congress of Pacific Basin Societies, PACIFICHEM  2015.12.19 

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    Event date: 2015.12

    Presentation type:Oral presentation (invited, special)  

    Venue:Honolulu, USA  

  175. Statistical Characterization of Carbon Nanotube Thin-Film Transistors Based on Solution Process International conference

    J. Hirotani, S. Kishimoto and Y. Ohno

    International Symposium on EcoTopia Science 2015  2015.11.28 

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    Event date: 2015.11

    Venue:Nagoya, Japan  

  176. Fabrication and electrochemical characterization of carbon nanotube microelectrode for biosensors International conference

    T. Ushiyama, N. X. Viet, S. Kishimoto and Y. Ohno

    International Symposium on EcoTopia Science 2015  2015.11.28 

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    Event date: 2015.11

    Venue:Nagoya, Japan  

  177. Residues on Transferred CVD Graphen International conference

    T. Yasunishi, Y. Takabayashi, S. Kishimoto, R. Kitaura, H. Shinohara, and Y. Ohno

    International Symposium on EcoTopia Science 2015  2015.11.28 

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    Event date: 2015.11

    Venue:Nagoya, Japan  

  178. Carbon nanotube flexible devices for wearable healthcare electronics International conference

    Y. Ohno

    5th International Conference on Nanotek & Expo  2015.11.17 

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    Event date: 2015.11

    Presentation type:Oral presentation (invited, special)  

    Venue:San Antonio, USA  

  179. Carbon nanotube thin film-based transistors and biosensors for flexible healthcare devices International conference

    Y. Ohno

    The 6th A3 Symposium on Emerging Materials Nanomaterials for Electronics, Energy, and Environment  2015.11.11 

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    Event date: 2015.11

    Presentation type:Oral presentation (invited, special)  

    Venue:Fukuoka, Japan  

  180. Investigation of residues on transferred CVD graphene International conference

    T. Yasunishi, Y. Takabayashi, S. Kishimoto, R. Kitaura, H. Shinohara, and Y. Ohno

    The 6th A3 Symposium on Emerging Materials Nanomaterials for Electronics, Energy, and Environment  2015.11.10 

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    Event date: 2015.11

    Venue:Fukuoka, Japan  

  181. Wafer-scale characterization of carbon nanotube thin-film transistors on flexible plastic substrates International conference

    J. Hirotani, S. Kishimoto and Y. Ohno

    The 6th A3 Symposium on Emerging Materials: Nanomaterials for Electronics, Energy, and Environment  2015.11.10 

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    Event date: 2015.11

    Venue:Fukuoka, Japan  

  182. Enhancement of signal current based on redox cycling in carbon nanotube electrochemical sensors International conference

    T. Ushiyama, N. X. Viet, S. Kishimoto and Y. Ohno

    The 6th A3 Symposium on Emerging Materials: Nanomaterials for Electronics, Energy, and Environment  2015.11.9 

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    Event date: 2015.11

    Venue:Fukuoka, Japan  

  183. Flexible bio-electronics applications of carbon nanotube thin films International conference

    Y. Ohno

    The International Conference on Small Science  2015.11.6 

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    Event date: 2015.11

    Presentation type:Oral presentation (invited, special)  

    Venue:Phuket, Thailand  

  184. Wafer-Scale Statistical Characterization of Carbon Nanotube Thin-Film Transistors International conference

    J. Hirotani, S. Kishimoto and Y. Ohno

    2015 International Conference on Solid State Devices and Materials  2015.9.29 

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    Event date: 2015.9

    Venue:Hokkaido, japan  

  185. カーボンナノチューブ薄膜を用いた柔軟で透明なエレクトロニクス

    大野雄高

    技術情報協会セミナー「伸縮性導電材料の開発とフレキシブルデバイスへの応用」  2015.9.24 

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    Event date: 2015.9

    Presentation type:Oral presentation (invited, special)  

    Venue:東京  

  186. Carbon nanotube thin films for flexible and formable electronics International conference

    Y. Ohno

    4th International Conference and Exhibition on Materials Science and Engineering  2015.9.15 

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    Event date: 2015.9

    Presentation type:Oral presentation (invited, special)  

    Venue:Orlando, USA  

  187. CVD合成グラフェンの転写における残渣の評価

    安西 智洋,高林 裕也, 岸本 茂,北浦 良, 篠原 久典, 大野 雄高

    第76回応用物理学会秋季学術講演会  2015.9.15 

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    Event date: 2015.9

    Venue:名古屋国際会議場  

  188. カーボンナノチューブ薄膜トランジスタの特性ばらつき評価

    廣谷潤,岸本茂,大野雄高

    第76回応用物理学会秋季学術講演会  2015.9.14 

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    Event date: 2015.9

    Venue:名古屋国際会議場  

  189. Flexible biosensors based on carbon nanotube thin-film transistors

    N.X. Viet, S. Kishimoto and Y. Ohno

    第76回応用物理学会秋季学術講演会  2015.9.14 

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    Event date: 2015.9

    Venue:名古屋国際会議場  

  190. Channel length dependence of characteristic variations in carbon nanotube thin-film transistors

    J. Hirotani, S. Kishimoto and Y. Ohno

    第49回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2015.9.9 

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    Event date: 2015.9

    Venue:北九州国際会議場  

  191. Carbon nanotube thin-film transistor for flexible biosensor applications

    N.X. Viet, S. Kishimoto and Y. Ohno

    第49回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2015.9.9 

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    Event date: 2015.9

    Venue:北九州国際会議場  

  192. Residual particles on transferred CVD graphene

    T. Yasunishi, Y. Takabayashi, S. Kishimoto, R. Kitaura, H. Shinohara, and Y. Ohno

    第49回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2015.9.8 

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    Event date: 2015.9

    Venue:北九州国際会議場  

  193. Ultra-high sensitivity carbon nanotube biosensors based on redox cycle process 

    T. Ushiyama, N. X. Viet, S. Kishimoto and Y. Ohno

    第49回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2015.9.7 

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    Event date: 2015.9

    Venue:北九州国際会議場  

  194. カーボンナノチューブ薄膜のエレクトロニクス応用

    大野雄高

    第5回フラーレン・ナノチューブ・グラフェン若手研究会  2015.9.6 

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    Event date: 2015.9

    Presentation type:Oral presentation (invited, special)  

    Venue:北九州国際会議場  

  195. カーボンナノチューブの電子デバイス応用

    大野雄高

    ナノ材料応用技術セミナー  2015.9.4 

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    Event date: 2015.9

    Presentation type:Oral presentation (invited, special)  

    Venue:京都  

  196. カーボンナノチューブによる柔軟で透明なエレクトロニクスとその展望

    大野雄高

    新産業技術促進検討会(モノづくり日本会議主催、NEDO共催)  2015.7.22 

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    Event date: 2015.7

    Presentation type:Oral presentation (invited, special)  

    Venue:東京  

  197. Statistic investigation of characteristic variation in carbon nanotube thin-film transistors

    J. Hirotani, R. Matsui, S. Kishimoto and Y. Ohno

    第34回電子材料シンポジウム  2015.7.17 

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    Event date: 2015.7

    Venue:ラフォーレ琵琶湖  

  198. Investigation of residual particles on CVD graphene in transfer process

    T. Yasunishi, Y. Takabayashi, S. Kishimoto, R. Kitaura, H. Shinohara, and Y. Ohno

    第34回電子材料シンポジウム  2015.7.14 

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    Event date: 2015.7

    Venue:ラフォーレ琵琶湖  

  199. Assessment of characteristic variation in carbon nanotube thin film transistors International conference

    J. Hirotani, R. Matsui, S. Kishimoto and Y. Ohno

    The Sixteenth International Conference on the Science and Applications of Nanotubes  2015.7.2 

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    Event date: 2015.7

    Venue:Nagoya, Japan  

  200. Flexible microelectrode based on CNT thin film and its electrochemical sensor applications International conference

    N. X. Viet, S. Kishimoto, and Y. Ohno

    The Sixteenth International Conference on the Science and Applications of Nanotubes  2015.7.2 

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    Event date: 2015.7

    Venue:Nagoya, Japan  

  201. Large-scale characterization of carbon nanotube thin-film transistors International conference

    J. Hirotani, R. Matsui, S. Kishimoto and Y. Ohno

    NT15 Satellite Symposia (Third Carbon Nanotube Thin Film Electronics and Applications Satellite)   2015.6.28 

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    Event date: 2015.6

    Venue:Nagoya, Japan  

  202. Flexible microelectrode based on CNT thin film and its electrochemical sensor applications International conference

    N. X. Viet, S. Kishimoto, and Y. Ohno

    NT15 Satellite Symposia (Third Carbon Nanotube Thin Film Electronics and Applications Satellite)  2015.6.28 

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    Event date: 2015.6

    Venue:Nagoya, Japan  

  203. カーボンナノチューブ薄膜の電子デバイス応用

    大野雄高

    新無機膜研究会第76回研究会  2015.6.12 

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    Event date: 2015.6

    Presentation type:Oral presentation (invited, special)  

    Venue:龍谷大学大阪梅田キャンパス  

  204. Wafer-scale investigation of electrical characteristics of carbon nanotube thin-film transistors International conference

    Y. Ohno

    Pre-NT15 Workshop of Carbon Nanotubes and Graphene at U Tokyo  2015.5.13 

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    Event date: 2015.5

    Presentation type:Oral presentation (invited, special)  

    Venue:Tokyo, Japan  

  205. Electronic and optoelectronic device applications of carbon nanotube thin films International conference

    Y. Ohno

    Nanotechnology-2015  2015.4.13 

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    Event date: 2015.4

    Presentation type:Oral presentation (invited, special)  

    Venue:Dubai, UAE  

  206. Directly Dry Deposited SWCNTs for Record High Performance Transparent Conductive Films  International conference

    A. Kaskela, N. Fukaya, P. Laiho, K. A. Mustonen, H. Jiang,Y. Ohno, E. I. Kauppinen

    2015 MRS Spring Meeting  2015.4.9 

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    Event date: 2015.4

    Venue:San Francisco, USA  

  207. Floating Catalyst CVD Synthesized SWCNTs for High Performance Thin Film Transistors  International conference

    A. Kaskela, K. Mustonen, P. Laiho, H. Jiang,Y. Ohno, and E. I. Kauppinen

    2015 MRS Spring Meeting  2015.4.9 

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    Event date: 2015.4

    Venue:San Francisco, USA  

  208. Fabrication and characterization of thin film transistors based on semiconductor-enriched carbon nanotubes International conference

    J. Hirotani, R. Matsui, S. Kishimoto and Y. Ohno

    29th International Winterschool on Electronic Properties of Novel Materials (IWEPNM2015)  2015.3.10 

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    Event date: 2015.3

    Venue:Kirchberg, Austria  

  209. カーボンナノチューブ薄膜によるフレキシブルエレクトロニクス

    大野雄高

    附置研究所間アライアンスG1分科会  2015.3.5 

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    Event date: 2015.3

    Presentation type:Oral presentation (invited, special)  

    Venue:名古屋  

  210. Characteristic variation of thin-film transistors based on purified semiconducting carbon nanotubes

    J. Hirotani, R. Matsui, S. Kishimoto and Y. Ohno

    第48回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2015.2.23 

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    Event date: 2015.2

    Venue:東京大学  

  211. 高速印刷技術を用いた微細トップゲート型カーボンナノチューブ薄膜トランジスタの作製

    前田迪彦、樋口健太郎、岸本茂、外村卓也、武居正史、畑克彦、大野雄高

    電子情報通信学会電子デバイス研究会  2015.2.6 

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    Event date: 2015.2

    Venue:北海道大学  

  212. フレキシブルカーボンナノチューブ集積回路の動作速度改善

    三善利忠、カスケラ アンティ、ライホ パトリック、ナシブリン アルバート、岸本茂、カウピネン エスコ、大野雄高

    電子情報通信学会電子デバイス研究会  2015.2.6 

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    Event date: 2015.2

    Venue:北海道大学  

  213. カーボンナノチューブ薄膜への電界集中効果によるOLEDのキャリア注入増強

    山田竜也、岸本茂、大野雄高

    電子情報通信学会電子デバイス研究会  2015.2.5 

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    Event date: 2015.2

    Venue:北海道大学  

  214. カーボンナノチューブ薄膜のウェアラブルセンサーデバイス応用

    大野雄高

    環境調和セラミックス材料研究会  2015.1.15 

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    Event date: 2015.1

    Presentation type:Oral presentation (invited, special)  

    Venue:名古屋工業大学  

  215. CNT Microelectrodes for Flexible Electrochemical Sensor Applications International conference

    N. X. Viet, S. Kishimoto, and Y. Ohno

    2014 MRS Fall Meeting and Exhibition  2014.12.4 

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    Event date: 2014.12

    Venue:Boston, USA  

  216. Highly Individual SWCNTS with a Narrow Chirality Distribution for High Performance Thin Film Electronics International conference

    A. Kaskela, P. Laiho, H. Jiang, K. Mustonen, A. G. Nasibulin, Y. Ohno, and E. I. Kauppinen

    2014 MRS Fall Meeting and Exhibition  2014.12.3 

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    Event date: 2014.12

    Venue:Boston, USA  

  217. Carbon nanotube thin films for transparent and flexible electronics International conference

    Y. Ohno

    US JSPS Alumni Association 5th Multidisciplinary Science Forum  2014.11.7 

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    Event date: 2014.11

    Presentation type:Oral presentation (invited, special)  

    Venue:Gainesville, USA  

  218. Distribution of threshold voltages in chemically-doped n-type carbon nanotube thin-film transistors on plastic film International conference

    T. Yasunishi, S. Kishimoto and Y. Ohno 

    The 5th A3 Symposium on Emerging Materials  2014.10.20 

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    Event date: 2014.10

    Venue:Tianjin, China  

  219. Fabrication of flexible CNT microelectrode and its application for electrochemical sensors International conference

    N.X. Viet, S. Kishimoto and Y. Ohno

    The 5th A3 Symposium on Emerging Materials  2014.10.20 

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    Event date: 2014.10

    Venue:Tianjin, China  

  220. Electronic/optoelectronic device applications of carbon nanotube thin films International conference

    Y. Ohno

    5th A3 Symposium of Emerging Materials  2014.10.19 

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    Event date: 2014.10

    Presentation type:Oral presentation (invited, special)  

    Venue:Tianjin, China  

  221. Carbon nanotube thin films for transparent and flexible electronics International conference

    Y. Ohno

    1st Annual Bis-Ocean Carbon Nanotube International Workshop  2014.9.26 

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    Event date: 2014.9

    Presentation type:Oral presentation (invited, special)  

    Venue:Seoul, Korea  

  222. n型カーボンナノチューブ薄膜トランジスタのしきい値ばらつきの評価

    安西 智洋、岸本 茂、大野 雄高

    第75回応用物理学会秋季学術講演会  2014.9.19 

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    Event date: 2014.9

    Venue:北海道大学  

  223. CNT microelectrodes for flexible electrochemical sensor applications

    N.X. Viet, S. Kishimoto and Y. Ohno

    第75回応用物理学会秋季学術講演会  2014.9.19 

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    Event date: 2014.9

    Venue:北海道大学  

  224. Carbon nanotube thin-film devices for transparent and flexible electronics International conference

    Y. Ohno

    Japan-Korea Joint Symposium on Semiconductor Physics and Technology – Nano-carbon materials including graphene –  2014.9.17 

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    Event date: 2014.9

    Presentation type:Oral presentation (invited, special)  

    Venue:Sapporo, Japan  

  225. Enhancement of Carrier Injection in OLEDs Utilizing Field Concentration to Carbon Nanotubes International conference

    T. Yamada, S. Kishimoto, Y. Ohno

    2014 International Conference on Solid State Devices and Materials  2014.9.11 

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    Event date: 2014.9

    Venue:Tukuba, Japan  

  226. Sub-10 μm Top-Gate Carbon Nanotube Thin-Film Transistors Fabricated by Flexographic Printing Process  International conference

    M. Maeda, K. Higuchi, S. Kishimoto, T. Tomura, M. Takesue, K. Hata, and Y. Ohno 

    2014 International Conference on Solid State Devices and Materials  2014.9.11 

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    Event date: 2014.9

    Venue:Tukuba, Japan  

  227. Threshold voltage distribution of chemically doped n-type carbon nanotube thin-film transistors

    安西 智洋、岸本 茂、大野 雄高

    第47回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2014.9.5 

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    Event date: 2014.9

    Venue:名古屋大学  

  228. Flexible microelectrode based on CNT thin film for electrochemical sensor applications

    N.X. Viet, S. Kishimoto and Y. Ohno

    第47回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2014.9.5 

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    Event date: 2014.9

    Venue:名古屋大学  

  229. Electron injection in organic light-emitting diodes by carbon nanotube thin film

    山田竜也、岸本茂、大野雄高

    第47回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2014.9.5 

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    Event date: 2014.9

    Venue:名古屋大学  

  230. Flexible electronics applications of carbon nanotube thin films International conference

    Y. Ohno

    The Fourth International Workshop on Nanocarbon Photonics and Optoelectronics  2014.8.1 

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    Event date: 2014.8

    Presentation type:Oral presentation (invited, special)  

    Venue:Polvijarvi, Finland  

  231. Flexible electronics applications of carbon nanotube thin films International conference

    Y. Ohno

    The 6th IEEE International Nanoelectronics Conference 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  232. カーボンナノチューブ薄膜の形成とデバイス応用

    大野雄高

    第6回窒化物半導体研究会  2014.7.25 

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    Event date: 2014.7

    Presentation type:Oral presentation (invited, special)  

    Venue:名城大学  

  233. Flexible electronics applications of carbon nanotube thin films International conference

    Y. Ohno

    CARBON2014 

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  234. Flexible electronics applications of carbon nanotube thin films International conference

    Y. Ohno

    The Fifteenth International Conference on the Science and Application of Nanotubes 

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  235. Flexible electronics applications of carbon nanotube thin films International conference

    Y. Ohno

    The 41st International Symposium on Compound Semiconductor 

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    Event date: 2014.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:France  

  236. Flexible devices based on carbon nanotube thin International conference

    Y. Ohno

    International Winterschool on Electronic Properties of Novel Materials 

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Austria  

  237. Carbon nanotube thin films for flexbile electronics application International conference

    Y. Ohno

    International Conference on Small Science 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (invited, special)  

  238. Carbon nanotube thin films for flexbile electronics application International conference

    Y. Ohno

    The 8th International Conference on Advanced Materials and Devices 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (invited, special)  

  239. Carbon nanotube thin films for flexbile electronics application International conference

    Y. Ohno

    A3 Symposium of Emerging Materials: Nanomaterials for Energy and Environments 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (invited, special)  

  240. カーボンナノチューブ薄膜のフレキシブルエレクトロニクス応用

    大野雄高

    薄膜材料デバイス研究会 第10回研究集会「薄膜デバイスの応用展開」 

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    Event date: 2013.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  241. 印刷型カーボンナノチューブ薄膜トランジスタの微細化に向けたフレキソ印刷技術の高解像度化の検討

    前田迪彦、樋口健太郎、中嶋勇太、外村卓也、武居正史、岸本茂、畑克彦、大野雄高

    第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  242. Fully-transparent, flexible and stretchable, all-carbon thin-film transistors and integrated circuits International conference

    Yutaka Ohno

    2013 JSAP-MRS Joint Symposium 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  243. Printed, flexible carbon nanotube thin-film transistors based on flexography International conference

    K. Higuchi, Y. Nakajima, T. Tomura, M. Takesue, S. Kishimoto, K. Hata, and Y. Ohno

    10th Tpical Workshop on Heterostructure Microelectronics 

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    Event date: 2013.9

    Language:English   Presentation type:Poster presentation  

  244. Flexible and stretchable electronics based on carbon nanotube thin films International conference

    Yutaka Ohno

    10th Tpical Workshop on Heterostructure Microelectronics 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  245. Flexible and stretchable carbon nanotube thin-film transistors and integrated circuits

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    Event date: 2013.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  246. Measurement of inter-tube contact resistances in carbon nanotube network by nanoprobes International conference

    N. Fukaya, D. Kim, K. Hasegawa, S. Kishimoto, T. Mizutani, S. Noda, and Y. Ohno

    The 18th International Conference on Electron Dynamics in Semiconductors 

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    Event date: 2013.7

    Language:English   Presentation type:Poster presentation  

  247. Measurement of inter-tube contact resistances in carbon nanotube network by nanoprobes International conference

    N. Fukaya, D.Kim, K. Hasegawa, S. Kishimoto, T. Mizutani, S. Noda, and Y. Ohno

    The 18th International Conference on Electron Dynamics in Semiconductors 

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    Event date: 2013.7

    Language:English   Presentation type:Poster presentation  

  248. Simple technique for patterning of carbon nanotubes on plastic film based on filtration transfer process International conference

    N. Fukaya, H. Shiraea, D. Kim, K. Hasegawa, S. Kishimoto, S. Noda, and Y. Ohno

    The 12th Asia Pacific Physics Conference 

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    Event date: 2013.7

    Language:English   Presentation type:Poster presentation  

  249. All-Carbon Thin-Film Transistors and Integrated Circuits for Flexible and Transparent Electronics International conference

    Y. Ohno, D.-M. Sun, M. Y. Timmermansa, A. Kaskela, A. G. Nasibulin, S. Kishimoto, and E. I. Kauppinen

    The 12th Asia Pacific Physics Conference 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

  250. カーボンナノチューブ薄膜トランジスタの研究動向

    大野雄高

    高分子学会有機エレクトロニクス研究会 

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    Event date: 2013.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  251. Carbon nanotube-based thin-film transistors on plastic film International conference

    Yutaka Ohno

    The 20th International Workshop on Active-Matrix Flatpanel Displays -TFT Technologies and FPD Materials- 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (invited, special)  

  252. High performance aerosol-CVD SWCNT network electrodesGate voltage dependent transport mechanism in carbon nanotube thin film transistors International conference

    A. Kaskela, P. Laiho, A. G. Nasibulin, Y. Ohno, and E. I. Kauppinen

    1st Carbon Nanotube Thin Film Applications Symposium 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

  253. Rapid and easy patterning of carbon nanotube films and its application to transparent conductive films International conference

    N. Fukaya, D. Kim, S. Kishimoto, S. Noda, and Y. Ohno

    1st Carbon Nanotube Thin Film Applications Symposium  

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

  254. Study on stability of chemically-doped n-type carbon nanotube thin film transistors International conference

    T. Yasunishi, S. Kishimoto, and Y. Ohno

    1st Carbon Nanotube Thin Film Applications Symposium 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

  255. High-mobility carbon nanotube thin-film transistors based on transfer and printing techniques International conference

    Y. Ohno, K. Higuchi, S. Kishimoto, Y. Nakajima, T. Tomura, M. Takesue, K. Hata, A. Kaskela, A. G. Nasibulin, and E. I. Kauppinen

    1st Carbon Nanotube Thin Film Applications Symposium 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

  256. Spatially resolved transport properties of pristine and doped single-walled carbon nanotube networks International conference

    A. Znidarsic, A. Kaskela, P. Laiho, M. Gaberscek, Y. Ohno, A. G. Nasibulin, E. I. Kauppinen, and A. Hassanien

    1st Carbon Nanotube Thin Film Applications Symposium 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

  257. High-mobility carbon nanotube thin-film transistors based on transfer and printing techniques International conference

    K. Higuchi, S. Kishimoto, Y. Nakajima, T. Tomura, M. Takesue, K. Hata, A. Kaskela, A. G. Nasibulin, E. I. Kauppinen, and Y. Ohno

    The Fourteenth International Conference on the Science and Application of Nanotubes 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

  258. Study on stability of chemically-doped n-type carbon nanotube thin film transistors International conference

    T. Yasunishi, S. Kishimoto, and Y. Ohno

    The Fourteenth International Conference on the Science and Application of Nanotubes  

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

  259. Rapid and easy patterning of carbon nanotube films and its application to transparent conductive films International conference

    N. Fukaya, D. Kim, S. Kishimoto, S. Noda, and Y. Ohno

    The Fourteenth International Conference on the Science and Application of Nanotubes 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

  260. Gate voltage dependent transport mechanism in carbon nanotube thin film transistors International conference

    M. Y. Timmermans, Y. Ohno, D.-M. Sun, K. Grigoras, A. Nasibulin, T. Mizutani, and E. I. Kauppinen

    The Fourteenth International Conference on the Science and Application of Nanotubes 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

  261. High-mobility n-type carbon nanotube thin film transistors on plastic film International conference

    T. Yasunishi, S. Kishimoto, T. Mizutani, E. I. Kauppinen, and Y. Ohno

    The 40th International Symposium on Compound Semiconductors 

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    Event date: 2013.5

    Language:English   Presentation type:Oral presentation (general)  

  262. 液相ろ過・転写によるプラスチック 基板上へのナノチューブ配線の形成

    深谷徳宏、片岡佑介、金東榮、長谷川馨、岸本茂、水谷孝、野田優、大野雄高

    第60回春季応用物理学会学術講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  263. High-performance, flexible carbon nanotube transparent conductive films of double layered structure

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    Event date: 2013.3

    Language:Japanese   Presentation type:Poster presentation  

  264. High-mobility, flexible, n-type carbon nanotube thin film transistors on plastic film

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    Event date: 2013.3

    Language:Japanese   Presentation type:Poster presentation  

  265. High-mobility carbon nanotube thin-film transistors fabricated on transparent plastic film by flexographic printing technique

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    Event date: 2013.3

    Language:Japanese   Presentation type:Poster presentation  

  266. Flexible and stretchable electron devices based on carbon nanotube thin flms International conference

    Y. Ohno

    27th International Winterschool on Electronic Properties of Novel Materials 

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    Event date: 2013.3

    Language:English   Presentation type:Oral presentation (invited, special)  

  267. High-mobility carbon nanotube thin-film transistors fabricated on plastic film with flexographic printing technique International conference

    K. Higuchi, Y. Nakajima, T. Tomura, M. Takesue, S. Kishimoto, T. Mizutani, K. Hata, and Y. Ohno

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2013.1

    Language:English   Presentation type:Oral presentation (general)  

  268. S-parameter characterization of radio-frequency FETs with high-purity semiconductor carbon nanotubes International conference

    M. Inagaki, K. Hata, K. Shiozawa, Y. Miyata, Y. Ohno, S. Kishimoto, H. Shinohara, and T. Mizutani

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2013.1

    Language:English   Presentation type:Poster presentation  

  269. High-performance, flexible, grid-structured carbon nanotube transparent conductive films International conference

    N. Fukaya, Y. Kataoka, D. Kim, S. Kishimoto, T. Mizutani, S. Noda, and Y. Ohno

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 

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    Event date: 2013.1

    Language:English   Presentation type:Poster presentation  

  270. Carbon nanotube TFTs and ICs for flexible and printable electronics International conference

    Y. Ohno

    A3 Symposium of Emerging Materials: Nanomaterials for Energy and Environments 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  271. Carbon nanotube transparent conductive film with grid wirings International conference

    Norihiro Fukaya, Yusuke Kataoka, Dong Young Kim, Shigeru Kishimoto, Takashi Mizutani, Suguru Noda, and Yutaka Ohno

    A3 Symposium of Emerging Materials: Nanomaterials for Energy and Environments 

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    Event date: 2012.10

    Language:English   Presentation type:Poster presentation  

  272. SWCNTs and plastic electronics International conference

    Y. Ohno

    Tekniikka - Technology 2012, Workshop on Nanotechnology 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  273. Carbon-nanotube-based plastic electronics International conference

    Y. Ohno

    2012 International Conference on Solid State Devices and Materials 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  274. 高純度半導体カーボンナノチューブを用いた高周波FETの特性評価

    稲垣正己、畑謙佑、塩沢一成、宮田耕充、大野雄高、岸本茂、篠原久典、水谷孝

    第73回秋季応用物理学会学術講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  275. グリッド配線によるCNT 透明導電膜の低抵抗化

    深谷徳宏、片岡佑介、金東榮、岸本茂、水谷孝、野田優、大野雄高

    第73回秋季応用物理学会学術講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  276. 高速転写・フレキソ印刷技術を用いた高移動度カーボンナノチューブ薄膜トランジスタの作製

    樋口健太郎、中嶋勇太、外村卓也、武居正史、岸本茂、水谷孝、畑克彦、大野雄高

    第73回秋季応用物理学会学術講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  277. CNT FET−ゲート絶縁膜界面と特性制御−

    大野雄高

    固体材料における電界効果の物理と応用の進展 -第4回若手ミニワークショップ- 

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    Event date: 2012.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  278. Carbon-nanotube-based plastic electronics International conference

    Y. Ohno

    The Third International Workshop on Nanocarbon Photonics and Optoelectronics 

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    Event date: 2012.8

    Language:English   Presentation type:Oral presentation (invited, special)  

  279. Carbon nanotube-based plastic electronics International conference

    Y. Ohno

    International Conference of Young Researchers on Advanced Materials 

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    Event date: 2012.7

    Language:English   Presentation type:Oral presentation (keynote)  

  280. Carbon-nanotube-based plastic electronics International conference

    Y. Ohno

    2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date: 2012.6

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  281. Solution-based high-frequency field-effect transistors with purified semiconductor carbon nanotubes International conference

    M. Inagaki, K. Hata, K. Shiozawa, Y. Miyata, Y. Ohno, S. Kishimoto, H. Shinohara, and T. Mizutani

    2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date: 2012.6

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  282. Flexible and transparent all-carbon thin-film transistors and integrated circuits International conference

    D.M. Sun, M. Y. Timmermans, A. Kaskela, A. G. Nasibulin, S. Kishimoto, T. Mizutani, E. I. Kauppinen, and Y. Ohno

    Thirteenth International Conference on the Science and Application of Nanotubes 

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    Event date: 2012.6

    Language:English   Presentation type:Oral presentation (general)  

  283. High-mobility carbon nanotube thin-film transistors on plastic fabricated by high-throughput transfer and flexo printing technique International conference

    K. Higuchi, Y. Nakajima, T. Tomura, M. Takesue, S. Kishimoto, T. Mizutani, K. Hata, and Y. Ohno

    Thirteenth International Conference on the Science and Application of Nanotubes 

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    Event date: 2012.6

    Language:English   Presentation type:Poster presentation  

  284. Observation of n-type conduction in CNTFETs with Au contacts in vacuum International conference

    Hideki Imaeda, Satoshi Ishii, Shigeru Kishimoto, Yutaka Ohno and Takashi Mizutani

    International Symposium on Carbon Nanotube Nanoelectronics 

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    Event date: 2012.6

    Language:English   Presentation type:Poster presentation  

  285. Carbon Nanotube TFTs and ICs for Flexible Electronics International conference

    D.M. Sun, M. Y. Timmermans, Y. Tian, A. G. Nasibulin, S. Kishimoto, T. Mizutani, E. I. Kauppinen, and Y. Ohno

    International Symposium on Carbon Nanotube Nanoelectronics 2012 

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    Event date: 2012.6

    Language:English   Presentation type:Poster presentation  

  286. Resistance distribution meausurement of CNT network by conductive atomic force microscopy International conference

    K. Housayama, Y. Okigawa, Y. Ohno, S. Kishimoto and T. Mizutani

    International Symposium on Carbon Nanotube Nanoelectronics 2012 

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    Event date: 2012.6

    Language:English   Presentation type:Poster presentation  

  287. High-Mobility Carbon Nanotube Thin-Film Transistors on Plastic Fabricated by High-Throughput Transfer and Flexo Printing Technique International conference

    K. Highchi, Y. Nakajima, T. Tomura, M. Takesue, S. Kishimoto, T. Mizutani, K. Hata, and Y. Ohno

    International Symposium on Carbon Nanotube Nanoelectronics 2012 

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    Event date: 2012.6

    Language:English   Presentation type:Poster presentation  

  288. High-frequency characterization of high-purity semiconductor carbon nanotube field-effect transistors International conference

    M. Inagaki, K. Hata, K. Shiozawa, Y. Miyata, Y. Ohno, S. Kishimoto, H. Shinohara, and T. Mizutani

    International Symposium on Carbon Nanotube Nanoelectronics 2012 

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    Event date: 2012.6

    Language:English   Presentation type:Poster presentation  

  289. Characterization of CNT-FETs with graphitic carbon interlayer electrodes International conference

    M. Tamaoki, S. Kishimoto, Y. Ohno and T. Mizutani

    International Symposium on Carbon Nanotube Nanoelectronics 2012 

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    Event date: 2012.6

    Language:English   Presentation type:Poster presentation  

  290. Semiconducting Carbon Nanotubes for Thin-Film Transistors International conference

    Y. Miyata, B. Thendie, K. Shiozawa, Y. Ohno, R. Kitaura, T. Mizutani, and H. Shinohara

    International Symposium on Carbon Nanotube Nanoelectronics 2012 

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    Event date: 2012.6

    Language:English   Presentation type:Oral presentation (general)  

  291. CNT Optoelectronic Devices and Thin-Film Transistors International conference

    T. Mizutani, S. Kishimoto, and Y. Ohno

    International Symposium on Carbon Nanotube Nanoelectronics 2012 

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    Event date: 2012.6

    Language:English   Presentation type:Oral presentation (general)  

  292. Carbon nanotube-based plastic electronics International conference

    Y. Ohno

    Berkeley Nanotechnology Forum 2012 

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    Event date: 2012.4

    Language:English   Presentation type:Oral presentation (keynote)  

  293. All-carbon thin-film transistors and integrated circuits for flexible and transparent electronics International conference

    D.M. Sun, M. Y. Timmermans, A. Kaskela, A. G. Nasibulin, S. Kishimoto, T. Mizutani, E. I. Kauppinen, and Y. Ohno

    2012 MRS Spring Meeting 

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    Event date: 2012.4

    Language:English   Presentation type:Oral presentation (general)  

  294. Physics and Devices of Nanocarbon Materials International conference

    Y. Ohno

    MRS Spring Meeting 

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    Event date: 2012.4

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  295. Flexible and transparent all-carbon thin-film transistors

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  296. 嫌気環境システムを利用したAl-CNTFETにおけるn-型特性の評価

    石井聡、玉置聖人、岸本茂、大野雄高、水谷孝

    第59回応用物理学関係連合講演会 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  297. 導電型原子間力顕微鏡を用いたCNTネットワークの抵抗分布測定

    柞山公佑、沖川侑揮、大野雄高、岸本茂、水谷孝

    第59回応用物理学関係連合講演会 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  298. 導電型原子間力顕微鏡を用いたSi基板に直接成長させたCNTネットワークの抵抗分布測定

    柞山公佑、沖川侑揮、大野雄高、岸本茂、水谷孝

    第42回フラーレン・ナノチューブ・グラフェン総合シンポジウム 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Poster presentation  

  299. 電極下にグラフィティックカーボンを挿入したCNT-FETの障壁高さの見積もり

    玉置聖人、岸本茂、大野雄高、水谷孝

    第42回フラーレン・ナノチューブ・グラフェン総合シンポジウム 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Poster presentation  

  300. カーボンナノチューブ薄膜トランジスタおよび集積回路の作製と評価

    大野雄高

    仙台“プラズマフォーラム” 平成23年度 東北大学電気通信研究所共同プロジェクト研究会 「プラズマナノバイオトロニクスの基礎研究」 

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    Event date: 2012.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  301. CNFETにおけるhigh-kゲート絶縁膜界面近傍の電荷分布とその影響

    鈴木耕佑,大野雄高,岸本茂,水谷孝

    電子情報通信学会電子デバイス研究会 

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    Event date: 2012.2

    Language:Japanese   Presentation type:Oral presentation (general)  

  302. カーボンナノチューブフレキシブルデバイス

    大野雄高

    日本学術振興会第151委員会研究会「フレキシブルエレクトロニクス・TFTの現状」 

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    Event date: 2012.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  303. プラスチック基板上に作製したカーボンナノチューブ薄膜トランジスタと集積

    大野雄高

    応用電子物性分科会研究例会「デバイス応用に向けたナノカーボン成長技術の新展開」 

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    Event date: 2011.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  304. プラスチック基板上に高性能なCNT薄膜トランジスタおよび集積回路を作成−安価なフレキシブルエレクトロニクスの実現に向けて−

    大野雄高

    高分子学会高分子同友会 

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    Event date: 2011.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  305. Carbon-nanotube-based high-performance flexible electronics International conference

    Y. Ohno

    The 1st Annual World Congress of Nano-S&T 

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    Event date: 2011.10

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  306. Charges in High-k Dielectric and Their Effects on Property of 1D Channel FETs International conference

    K. Suzuki, Y. Ohno, S. Kishimoto, and T. Mizutani

    International Workshop on Quantum Nanostructure& Nanoelectronics 

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    Event date: 2011.10

    Language:English   Presentation type:Poster presentation  

  307. Carbon nanotube TFTs and ICs for plastic electronics International conference

    Y. Ohno

    International Workshop on Quantum Nanostructures and Nanoelectronics  

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    Event date: 2011.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  308. High-performance Carbon Nanotube Thin-film Transistors with >600 cm2V&#8211;1s&#8211;1 Mobility and >107 On/off Ratio International conference

    D.M. Sun, M. Y. Timmermans, Y. Tian, A. G. Nasibulin, E. I. Kauppinen, S. Kishimoto, T. Mizutani, and Y. Ohno

    2011 International Conference on Solid State Devices and Materials 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

  309. Observation of n-type conduction in CNTFETs with Au contacts in vacuum International conference

    H. Imaeda, S. Kishimoto, Y. Ohno, and T. Mizutani

    2011 International Conference on Solid State Devices and Materials 

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    Event date: 2011.9

    Language:English   Presentation type:Poster presentation  

  310. Interfaces of High-k Gate Insulator in Carbon Nanotube FETs International conference

    K. Suzuki, Y. Ohno, S. Kishimoto, and T. Mizutani

    2011 International Conference on Solid State Devices and Materials 

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    Event date: 2011.9

    Language:English   Presentation type:Poster presentation  

  311. Estimation of height of defect-induced barriers in metallic CNTs International conference

    Y. Okigawa, Y. Ohno, S. Kishimoto, and T. Mizutani

    2011 International Conference on Solid State Devices and Materials 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

  312. Resistance distribution of CNT network measured by conductive atomic force microscopy International conference

    K. Housayama, Y. Okigawa, Y. Ohno, S. Kishimoto, T. Mizutani

    2011 International Conference on Solid State Devices and Materials 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

  313. Flexible and high-performance carbon nanotube thin-film transistors and integrated circuits International conference

    Y. Ohno

    Nano and Giga Challenges in Electronics, Photonics and Renewable Energy 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  314. CNFETのゲート絶縁膜界面における界面電荷分布

    鈴木耕佑,大野雄高,岸本茂,水谷孝

    第72回応用物理学会学術講演会 

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    Event date: 2011.8

    Language:Japanese   Presentation type:Oral presentation (general)  

  315. カーボンナノチューブ薄膜トランジスタの特性評価:移動度とオン/オフ比

    孫 東明,ティメルマンズ マリナ,田 &#33721;,ナシブリン アルバート,岸本 茂, 水谷 孝, カウピネン エスコ, 大野 雄高

    第72回応用物理学会学術講演会 2011年8月29-9月2日 

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    Event date: 2011.8

    Language:Japanese   Presentation type:Oral presentation (general)  

  316. Au電極CNTFETの真空中におけるn型伝導の観測

    今枝英樹,岸本茂,大野雄高,大野雄高,水谷孝

    第72回応用物理学会学術講演会 

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    Event date: 2011.8

    Language:Japanese   Presentation type:Oral presentation (general)  

  317. Carbon nanotube transistors: Control and integration International conference

    Y. Ohno

    14th International Workshop on New Approaches to High-Tech: Nano-Design, Technology, Computer Simulations 

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    Event date: 2011.8

    Language:English   Presentation type:Oral presentation (keynote)  

  318. High-Performance Medium-Scale Integrated Circuits Using Carbon Nanotube Thin-Film Transistors International conference

    T. Mizutani, Y. Okigawa, Y. Ono, S. Kishimoto, and Y. Ohno

    International Conference on the Science and Application of Nanotubes 2011 

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    Event date: 2011.7

    Language:English   Presentation type:Oral presentation (general)  

  319. Enhancement of high-frequency characteristics of carbon nanotube FETs by chemical doping International conference

    K. Hata, Y. Ohno, S. Kishimoto, and T. Mizutani

    International Conference on the Science and Application of Nanotubes 2011 

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    Event date: 2011.7

    Language:English   Presentation type:Poster presentation  

  320. High-performance, Functional Carbon Nanotube Integrated Circuits On Plastic International conference

    D.M. Sun, M. Y. Timmermans, Y. Tian, A. G. Nasibulin, E. I. Kauppinen, S. Kishimoto, T. Mizutani, and Y. Ohno

    International Conference on the Science and Application of Nanotubes 2011 

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    Event date: 2011.7

    Language:English   Presentation type:Poster presentation  

  321. Optimizing Carbon Nanotube Network Morphology for Thin Film Transistors International conference

    M. Y. Timmermans, D. Estrada, D.-M. Sun, M. Partanen, A. G. Nasibulin, Y. Ohno, E. Pop, E. I. Kauppinen

    International Conference on the Science and Application of Nanotubes 2011 

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    Event date: 2011.7

    Language:English   Presentation type:Poster presentation  

  322. Interfaces in Carbon Nanotube FETs Studied by Kelvin Probe Force Microscopy International conference

    K. Suzuki, Y. Ohno, S. Kishimoto, and T. Mizutani

    International Conference on the Science and Application of Nanotubes 2011 

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    Event date: 2011.7

    Language:English   Presentation type:Poster presentation  

  323. Measurement of the Defect-induced Barirer Height in Metallic CNTs International conference

    Y. Okigawa, Y. Ohno, S. Kishimoto, and T. Mizutani

    International Conference on the Science and Application of Nanotubes 2011 

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    Event date: 2011.7

    Language:English   Presentation type:Poster presentation  

  324. Oxygen-Free Fabrication and Characterization of n-Type SWNT-FETs with Al Contacts International conference

    S. Ishii, H. Imaeda, Y. Ohno, S. Kishimoto, and T. Mizutani

    International Conference on the Science and Application of Nanotubes 2011 

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    Event date: 2011.7

    Language:English   Presentation type:Poster presentation  

  325. High-Performance, Functional Carbon Nanotube Integrated Circuits on Plastic International conference

    D.-M. Sun, M. Y. Timmermans, Y. Tian, A. G. Nasibulin, E. I. Kauppinen, S. Kishimoto, T. Mizutani, and Y. Ohno

    Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date: 2011.6

    Language:English   Presentation type:Oral presentation (general)  

  326. カーボンナノチューブトランジスタ:成長技術とプロセス技術

    大野雄高

    化学工学会・反応工学部会・CVD反応分科会・ミニシンポジウム「ナノカーボン製造プロセスとエレクトロニクス応用」 

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    Event date: 2011.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  327. Electroluminescence from electrostatically doped carbon nanotubes

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  328. 嫌気環境下CNT-FETの作製とその評価

    石井聡,大野雄高,岸本茂,水谷孝

    第58回応用物理学関係連合講演会 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  329. KFMを用いたCNFETにおけるゲート絶縁膜界面の解析

    鈴木耕佑,大野雄高,岸本茂,水谷孝

    第58回応用物理学関係連合講演会 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  330. 金属CNT中の欠陥に起因する障壁の高さの見積もり

    沖川侑揮,岸本茂,大野雄高,水谷孝

    第58回応用物理学関係連合講演会 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  331. PECVDを用いたCNT薄膜トランジスタの集積回路の実現

    沖川侑揮、小野雄貴、岸本茂、大野雄高、水谷孝

    第58回応用物理学関係連合講演会 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  332. 気相濾過・転写法により作製したカーボンナノチューブ薄膜トランジスタの特性評価

    孫 東明,ティメルマンズ マリナ,田 &#33721;,ナシブリン アルバート,岸本 茂, 水谷 孝, カウピネン エスコ, 大野 雄高

    第58回応用物理学関係連合講演会 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  333. PECVD成長CNTのPVAによるPEN基板への転写とTFT作製

    二宗護,孫東明,岸本茂,大野雄高,水谷孝

    第58回応用物理学関係連合講演会 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  334. 長さ分離した半導体カーボンナノチューブを用いた高性能薄膜トランジスタ

    塩沢一成, 宮田耕充, 浅田有紀, 大野雄高, 北浦良, 水谷孝, 篠原久典

    第58回応用物理学関係連合講演会 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  335. グラフィティックカーボン挿入電極CNT-FETの障壁高さの見積もり

    玉置聖人、岸本茂、大野雄高、水谷孝

    第59回応用物理学関係連合講演会 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  336. 気相ろ過・転写法により作製したカーボンナノチューブ薄膜トランジスタの移動度とオン/オフ比

    孫東明,ティメルマンズ・マリナ,イン・ティアン,ナシブリン・アルバート,岸本茂,水谷孝,カウピネン・エスコ,大野雄高

    第40回記念フラーレンナノチューブ・総合シンポ 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  337. カーボンナノチューブトランジスタの特性制御と集積化

    大野雄高

    電子情報通信学会・電子デバイス研究会・特別ワークショップ「ナノチューブ/グラフェンエレクトロニクス:成長からデバイス応用まで」 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  338. 走査型プローブ顕微鏡を用いたカーボンナノチューブ薄膜トランジスタの評価・解析

    沖川侑揮,大野雄高,岸本茂,水谷孝

    電子情報通信学会電子デバイス研究会 

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    Event date: 2011.2

    Language:Japanese   Presentation type:Oral presentation (general)  

  339. 高性能カーボンナノチューブトランジスタ:特性制御と集積化

    大野雄高

    ナノカーボン物質の基礎と応用:現状と展望に関する若手研究会