研究者詳細 - 田渕　雅夫

論文 - 田渕　雅夫

分割表示 103 件中 61 - 80 件目／全件表示 >>

In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy 査読有り

T. Kawaguchi, H. Uemura1, T. Ohno, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, and H. Ikuta

Appl. Phys. Lett. 97 巻頁： 042509 2010年

High-Brightness Spin-Polarized Electron Source Using Semiconductor Photocathodes 査読有り

Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, and Takashi Meguro

48 巻頁： 06FF02-1-3 2009年

Measurement of X-ray CTR Signals from GaN/GaInN/GaN at High Temperatures Using Newly Developed Measurement System, 査読有り

Y. Takeda, T. Mizuno, H. Kamiya, K. Ninoi, and M. Tabuchi

Trans. Mat. Res. Soc. Jpn. 34 巻頁： 585-588 2009年

Superlattice Photocathode with High Brightness and Long NEA-Surface Lifetime 査読有り

Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, and Takashi Meguro,

AIP Conf. Proc. 1149 巻頁： 1047-1051 2009年

Study on Accumulation process of As atoms in InP/GaInAs/InP hetero-structures, 査読有り

M. Tabuchi, A. Mori, H. Tameoka, K. Fujii, and Y. Takeda

Trans. Mat. Res. Soc. Jpn. 34 巻頁： 593-595 2009年

*Development of New X-ray CTR Scattering Measurement System Using Johansson Monochromator 査読有り

M. Tabuchi, H. Tameoka, T. Kawase, and Y. Takeda

Trans. Mat. Res. Soc. Jpn. 34 巻頁： 589-591 2009年

担当区分：筆頭著者記述言語：英語掲載種別：研究論文（学術雑誌）

A new X-ray CTR scattering measurement system was reported that was equipped with a Johansson monocromator to focus X-rays at a sample position. Using the focused X-rays and a two-dimensional detector, X-ray CTR scattering measurement was able to be carried out without moving any component of the measurement system. The results of the X-ray CTR scattering measurement using the new system successfully demonstrated that the CTR scattering profiles were comparable to that measured at PF using synchrotron radiation even when the measurement time was 10 minutes or longer. The results suggested that the new measurement system is useful for quick and in-situ X-ray CTR scattering measurements.

Fluorescence EXAFS study of residual Ga in b-FeSi2 grownfrom Ga solvent 査読有り

H. Yamada, M. Tabuchi, Y. Takeda, and H. Udono

J. Phys., Conf. Ser. 190 巻頁： 012069 2009年

Effect of Ln-site disorder on Tc of oxypnictide superconductor LnFeAsOF (Ln=Nd, Cd-Gd, and La-Dy) 査読有り

Koshi Takenaka, Ryotaro Watanabe, Hiroomi Yamada, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Ikuta

J. Phys. Soc. Jpn. 78 巻頁： 073701-1-4 2009年

Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy 査読有り

Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno, Ryotaro Watanabe, Masao Tabuchi, Toru Ujihara, Koshi Takenaka, Yoshikazu Takeda, and Hiroshi Ikuta

Applied Physics Express 2 巻頁： 093002 2009年

X-ray CTR scattering measurements using conventional X-ray source to study semiconductor hetero-interfaces 査読有り

Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, and Y. Takeda

Trans. Mat. Res. Soc. Jpn. 33 巻頁： 591-594 2008年

Buried Heterostructure of Nitride Semiconductors Revealed by Laboratory Level X-ray CTR Scattering 査読有り

Y. Takeda, Y. Maeda, T. Mizuno, and M. Tabuchi

Trans. Mat. Res. Soc. Jpn. 33 巻頁： 547-550 2008年

Surface X-ray diffraction studies of CaF2(110)/Si(001) interface formation 査読有り

T. Shimura, S.M. Suturin, N.S. Sokolov, A.G. Banshchikov, R.N. Kyutt, O. Sakata, J. Harada, M. Tabuchi, Y. Takeda

{Acta Cryst. A64 巻頁： C556 2008年

*"Formation of patterned GaInAs/GaAs hetero-structures using amorphous arsenic mask" 査読有り

Y. Noritake, T. Yamada, M. Tabuchi, and Y. Takeda

J. Cryst. Growth 301-302 巻頁： 876-879 2007年

X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interface 査読有り

M. Tabuchi, A. Mori, Y. Ohtake, and Y. Takeda

J. Phys.: Conference Series 83 巻頁： 012031 2007年

担当区分：筆頭著者記述言語：英語掲載種別：研究論文（学術雑誌）

It has been successfully shown that X-ray CTR scattering measurement is a good tool to study the formation process of the InP/GaInAs interfaces grown by OMVPE even when the measurement is conducted after the growth. Using the X-ray CTR scattering measurement, the contributions of effects, i.e., surface roughness, adsorption of atoms, and exchange of
atoms, on the formation process of InP/GaInAs interface were able to be discussed. The adsorption of As atoms on the GaInAs surface was shown to have the largest contribution on
the abruptness of the interface.

The importance to reveal buried interfaces in the semiconductor heterostructure devices 査読有り

Y. Takeda, and M. Tabuchi

J. Phys.: Conference Series 83 巻頁： 012002 2007年

*"Atomic scale analysis of MOVPE grown heterostructures by X-ray crystal truncation rod scattering measurement" 査読有り

M. Tabuchi, and Y. Takeda

J. Cryst. Growth 298 巻頁： 12-17 2007年

"Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation" 査読有り

Y. Ohtake, T. Eguchi, S. Miyake, W.S. Lee, M. Tabuchi, and Y. Takeda

AIP Conference Proceedings 879 巻頁： 1619-1622 2007年

"Analysis of In Distribution in GaInN/GaN Multilayer Structures by X-ray CTR Scattering" 査読有り

M. Tabuchi, Y. Ohtake, and Y. Takeda

Transactions of the Materials Research Society of Japan 32 巻 ( 9 ) 頁： 219-222 2007年

"Study on Buried Interfaces in Semiconductor Heterostructures by X-ray Reflectivity" 査読有り

Y. Takeda, and M. Tabuchi

Transactions of the Materials Research Society of Japan 32 巻 ( 1 ) 頁： 187-192 2007年

Structure and surface morphology of MnF2 epitaxial layers grown on grooved and ridged CaF2 (110) surface 査読有り

R.N. Kyutt, A.K. Kaveev, N.S. Sokolov, A.A. Lomov, Y. Ohtake, M. Tabuchi, and Y. Takeda

J. Phys. D: Appl 40 巻頁： 4896-4901 2007年

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