Updated on 2022/03/24

写真a

 
TABUCHI, Masao
 
Organization
Synchrotron Radiation Research Center Division of Synchrotron Radiation Professor
Graduate School
Graduate School of Engineering
Title
Professor
Contact information
メールアドレス

Degree 1

  1. Doctor of Engineering

Research Interests 5

  1. 材料評価技術

  2. 半導体結晶成長

  3. 物質科学

  4. XAFS計測

  5. 放射光応用計測

Research Areas 4

  1. Others / Others  / Applied Physical Properties/Crystal Engineering

  2. Others / Others  / Electronic materials

  3. Others / Others  / 放射光応用計測

  4. Nanotechnology/Materials / Crystal engineering

Current Research Project and SDGs 4

  1. Analysis of local structures in semiconductors by fluorescence EXAFS using synchrotron radiation

  2. Analysis of III-V alloy semiconductor interfaces by X-ray CTR scattering using synchrotron radiation.

  3. 放射光を用いた材料計測に関する研究

  4. 放射光を用いたXAFS計測の高度化

Research History 8

  1. Nagoya University   Synchrotron Radiation Research Center Division of Synchrotron Radiation   Professor

    2016.4

  2. Nagoya University   Designated professor

    2011.8 - 2016.3

  3. 名古屋大学准教授(大学院工学研究科)

    2007.4

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    Country:Japan

  4. 名古屋大学助教授(大学院工学研究科)

    2004.4 - 2007.3

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    Country:Japan

  5. 名古屋大学助教授(工学部)

    2003.4 - 2004.3

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    Country:Japan

  6. 名古屋大学講師(大学院工学研究科)

    2000.4 - 2003.3

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    Country:Japan

  7. 名古屋大学講師(工学部)

    1997.1 - 2000.3

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    Country:Japan

  8. 名古屋大学助手(工学部)

    1992.4 - 1996.12

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    Country:Japan

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Education 2

  1. Kyoto University   Graduate School, Division of Engineering

    - 1992

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    Country: Japan

  2. Kyoto University   Faculty of Engineering

    - 1987

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    Country: Japan

Professional Memberships 3

  1. 日本結晶成長学会

  2. 日本放射光学会

  3. 応用物理学会

Committee Memberships 39

  1. 応用物理学   論文賞審査委員  

    2021   

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    Committee type:Academic society

  2. あいちSR   成果公開無償利用事業課題審査委員会  

    2021   

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    Committee type:Other

  3. 佐賀LS   他機関BL評価委員会評価委員  

    2021   

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    Committee type:Other

  4. 日本結晶成長学会   理事  

    2016.4 - 2019.3   

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    Committee type:Academic society

  5. InPと関連材料国際会議論文委員会   委員  

    2016   

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    Committee type:Academic society

  6. XAFS討論会実行委員会   実行委員長  

    2016   

  7. 高エネルギー加速器研究機構 放射光減ビーム利用検討委員会   委員  

    2016   

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    Committee type:Academic society

  8. 高エネルギー加速器研究機構 放射光減ビームライン検討委員会   分野とりまとめ  

    2016   

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    Committee type:Academic society

  9. 高エネルギー加速器研究機構 放射光源運営形態検討委員会   委員  

    2016   

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    Committee type:Academic society

  10. 高エネルギー加速器研究機構放射光共同利用実験審査委員会   委員, 分科会委員長(2017.4~)  

    2015.4   

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    Committee type:Academic society

  11. 応用物理学会代議員   委員  

    2014.2 - 2018.1   

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    Committee type:Academic society

  12. 日本放射光学会年会・放射光科学合同シンポジウム論文委員会   委員  

    2014 - 2015   

  13. 国際結晶学会マイクロシンポジウム   Co-Chair  

    2014   

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    Committee type:Academic society

  14. 日本XAFS研究会光源検討委員会   委員  

    2013 - 2017   

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    Committee type:Academic society

  15. 化合物半導体国際会議論文委員会   委員  

    2013   

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    Committee type:Academic society

  16. 日本放射光学会年会・放射光科学合同シンポジウム実行委員会   委員  

    2013   

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    Committee type:Academic society

  17. 高エネルギー加速器研究機構 Photon Factory User Association運営委員会   委員  

    2012   

  18. 電子材料シンポジウム実行委員会   委員  

    2012 - 2013   

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    Committee type:Academic society

  19. MBE国際会議論文委員会   委員  

    2012   

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    Committee type:Academic society

  20. 国際結晶学会コミッション   XAFS分野委員  

    2011 - 2017   

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    Committee type:Academic society

  21. PFシンポジウム運営委員   委員  

    2010   

  22. 高輝度光科学研究センター利用研究課題選定委員会   査読委員  

    2009.4   

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    Committee type:Academic society

  23. XAFS討論会論文委員   委員  

    2009   

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    Committee type:Academic society

    2016年は委員長

  24. 日本XAFS研究会   XAFS討論会プログラム委員  

    2009   

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    Committee type:Academic society

  25. 日本XAFS研究会   XAFS討論会論文委員  

    2009   

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    Committee type:Academic society

  26. 応用物理学会 結晶工学分科会   幹事、副幹事長(2018, 2019)、幹事長(2020-)  

    2008   

  27. InPと関連材料国際会議実行委員会   委員  

    2007   

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    Committee type:Academic society

  28. PF懇談会運営委員会   委員  

    2006 - 2011   

  29. PFシンポジウム運営委員   委員  

    2006   

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    Committee type:Academic society

  30. 日本放射光学会年会・放射光科学合同シンポジウム実行委員会   委員  

    2006   

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    Committee type:Academic society

  31. PF XAFSユーザーグループ   代表  

    2005   

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    Committee type:Academic society

  32. 高輝度光科学研究センター利用研究課題選定委員会   査読委員  

    2003.4 - 2006.3   

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    Committee type:Academic society

  33. 第5回窒化物半導体国際会議実行委員会   委員  

    2003   

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    Committee type:Academic society

  34. 高エネルギー加速器研究機構放射光共同利用実験審査委員会   査読委員  

    2001.4   

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    Committee type:Academic society

  35. 高エネルギー加速器研究機構放射光共同利用実験審査委員会   委員  

    2001.4 - 2005.3   

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    Committee type:Academic society

  36. 超小型放射光源とその産業応用に関する研究会   委員  

    2000.4 - 2002.3   

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    Committee type:Municipal

  37. 窒化物半導体国際ワークショップ現地実行委員会   委員  

    2000   

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    Committee type:Academic society

  38. XAFS討論会実行委員   委員  

    2000   

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    Committee type:Academic society

  39. 日本金属学会・日本鉄鋼協会秋季講演大会現地実行委員会   委員  

    2000   

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    Committee type:Academic society

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Papers 98

  1. Enhanced oxygen reduction activity of size-selected platinum subnanocluster catalysts: Pt-n (n=3-9)

    Ohnuma Akira, Takahashi Koki, Tsunoyama Hironori, Inoue Tomoya, Zhao Pei, Velloth Archana, Ehara Masahiro, Ichikuni Nobuyuki, Tabuchi Masao, Nakajima Atsushi

    CATALYSIS SCIENCE & TECHNOLOGY   Vol. 12 ( 5 ) page: 1400 - 1407   2022.3

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    Language:Japanese  

    DOI: 10.1039/d1cy00573a

    Web of Science

  2. Enhanced oxygen reduction activity of platinum subnanocluster catalysts through charge redistribution Invited International coauthorship

    Hironori Tsunoyama, Akira Ohnuma, Koki Takahashi, Archana Velloth, Masahiro Ehara, Nobuyuki Ichikuni, Masao Tabuchi, Atsushi Nakajima

    Toyota Boshoku Technical Review   Vol. 16   page: 30 - 35   2022

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    Language:English   Publishing type:Part of collection (book)  

  3. Controllable CaF2 Nanosized Stripe Arrays on Si(001) Studied by X-ray and Electron Diffraction

    Suturin Sergey M., Fedorov Vladimir V., Korovin Alexander M., Valkovskiy Gleb A., Tabuchi Masao, Sokolov Nikolai S.

    SURFACES   Vol. 4 ( 2 ) page: 97 - 105   2021.6

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    Language:Japanese  

    DOI: 10.3390/surfaces4020012

    Web of Science

  4. AlGaAs/GaAs superlattice photocathode grown by molecular beam epitaxy: correspondence between room temperature photoluminescence and quantum efficiency

    Morita Iori, Ishikawa Fumitaro, Honda Anna, Sato Daiki, Koizumi Atsushi, Nishitani Tomohiro, Tabuchi Masao

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

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    Language:Japanese  

    DOI: 10.35848/1347-4065/abd6e0

    Web of Science

  5. CT XAFS による価数の三次元可視化へのアプローチ : 修正線型結合フィッティング Invited Reviewed

    田渕雅夫

    X線分析研究の進歩   Vol. 52   page: 15 - 23   2021.3

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    Authorship:Lead author, Last author  

  6. Correlation between crystal structure and magnetism in PLD grown epitaxial films of epsilon-Fe2O3 on GaN

    Suturin Sergey M., Korovin Alexander M., Sitnikova Alla A., Kirilenko Demid A., Volkov Mikhail P., Dvortsova Polina A., Ukleev Victor A., Tabuchi Masao, Sokolov Nikolai S.

    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   Vol. 22 ( 1 ) page: 85 - 99   2021.2

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  7. AlGaAs/GaAs superlattice photocathode grown by molecular beam epitaxy: correspondence between room temperature photoluminescence and quantum efficiency Invited Reviewed

    I. Morita, F. Ishikawa, A. Honda, D. Sato, A. Koizumi, T. Nishitani, M. Tabuchi

    Jpn. J. Appl. Phys.   Vol. 60   page: SBBK02   2021

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  8. Correlation between crystal structure and magnetism in PLD grown epitaxial films of ε-Fe2O3 on GaN Reviewed

    S. Suturin, A. Korovin, A. Sitnikova, D. Kirilenko, M. Volkov, P. Dvortsova, V. Ukleev, M. Tabuchi, N. Sokolov

    Sci. Tech. Adv. Mat.   Vol. 22   page: 85 - 99   2021

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  9. Modified linear combination fitting for large-area two-dimensional chemical state mapping

    Tabuchi Masao, Sakamoto Ren, Takeda Shingo, Konishi Shunsuke, Suzuki Toshimasa, Nagami Tetsuo

    RADIATION PHYSICS AND CHEMISTRY   Vol. 175   2020.10

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  10. Chemical State Analysis of the Periostracum in the Corbicula Clam Hatched in Lake Biwa Reviewed

    Kuniko Takemoto, Kei Mitsuhara, Masao Tabuchi, Yuka Segawa, Daiya Bamba, Toshiaki Ohta

    J. Water and Environment Technology   Vol. 18 ( 1 ) page: 62-69   2020

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  11. Enhanced oxygen reduction activity of platinum subnanocluster catalysts through charge redistribution

    Tsunoyama Hironori, Ohnuma Akira, Takahashi Koki, Velloth Archana, Ehara Masahiro, Ichikuni Nobuyuki, Tabuchi Masao, Nakajima Atsushi

    CHEMICAL COMMUNICATIONS   Vol. 55 ( 84 ) page: 12603 - 12606   2019.10

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/c9cc06327g

    Web of Science

  12. Modified linear combination fitting for large-area two-dimensional chemical state mapping Reviewed

    Masao Tabuchi, Ren Sakamoto, Shingo Takeda, Shunsuke Konishi, Toshimasa Suzuki, Tetsuo Nagami

    Radiation Physics and Chemistry     page: 108257 (web)   2019

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  13. Tunable polymorphism of epitaxial iron oxides in the four-in-one ferroic-on-GaN system with magnetically ordered alpha-, gamma-, epsilon-Fe2O3, and Fe3O4 layers

    Suturin S. M., Korovin A. M., Gastev S. V, Volkov M. P., Sitnikova A. A., Kirilenko D. A., Tabuchi M., Sokolov N. S.

    PHYSICAL REVIEW MATERIALS   Vol. 2 ( 7 )   2018.7

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    DOI: 10.1103/PhysRevMaterials.2.073403

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  14. Laser MBE-grown CoFeB epitaxial layers on MgO: Surface morphology, crystal structure, and magnetic properties

    Kaveev Andrey K., Bursian Viktor E., Krichevtsov Boris B., Mashkov Konstantin V., Suturin Sergey M., Volkov Mikhail P., Tabuchi Masao, Sokolov Nikolai S.

    PHYSICAL REVIEW MATERIALS   Vol. 2 ( 1 )   2018.1

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    DOI: 10.1103/PhysRevMaterials.2.014411

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  15. Tunable polymorphism of epitaxial iron oxides in the four-in-one ferroic-on-GaN system with magnetically ordered α-, γ-, ɛ−Fe2O3, and Fe3O4 layers Reviewed

        page: 073403   2018

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  16. Laser MBE-grown CoFeB epitaxial layers on MgO: Surface morphology, crystal structure, and magnetic properties Reviewed

    A.K. Kaveev, V.E. Bursian, B.B. Krichevtsov, K.V. Mashkov, S.M. Suturin, M.P. Volkov, M. Tabuchi, and N.S. Sokolov

    Phys. Rev. Materials     page: 014411   2018

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  17. Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity

    Ju Guangxu, Tabuchi Masao, Takeda Yoshikazu, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 110 ( 26 )   2017.6

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    DOI: 10.1063/1.4990687

    Web of Science

  18. Epitaxial Ni nanoparticles on CaF2(001), (110) and (111) surfaces studied by three-dimensional RHEED, GIXD and GISAXS reciprocal-space mapping techniques

    Suturin S. M., Fedorov V. V., Korovin A. M., Sokolov N. S., Nashchekin A. V., Tabuchi M.

    JOURNAL OF APPLIED CRYSTALLOGRAPHY   Vol. 50   page: 830-839   2017.6

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    DOI: 10.1107/S160057671700512X

    Web of Science

  19. Magnetization reversal in YIG/GGG(111) nanoheterostructures grown by laser molecular beam epitaxy

    Krichevtsov Boris B., Gastev Sergei V., Suturin Sergey M., Fedorov Vladimir V., Korovin Alexander M., Bursian Viktor E., Banshchikov Alexander G., Volkov Mikhail P., Tabuchi Masao, Sokolov Nikolai S.

    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   Vol. 18 ( 1 ) page: 351-363   2017.5

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    DOI: 10.1080/14686996.2017.1316422

    Web of Science

  20. Translocation of 133Cs administered to Cryptomeria japonica wood Reviewed

    D. Aoki, R. Asai, R. Tomioka, Y. Matsushita, H. Asakura, M. Tabuchi, K. Fukushima

    Science of The Total Environment   Vol. 584-585   page: 88-95   2017.4

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  21. Translocation of Cs-133 administered to Cryptomeria japonica wood

    Aoki Dan, Asai Ryutaro, Tomioka Rie, Matsushita Yasuyuki, Asakura Hiroyuki, Tabuchi Masao, Fukushima Kazuhiko

    SCIENCE OF THE TOTAL ENVIRONMENT   Vol. 584   page: 88-95   2017.4

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    DOI: 10.1016/j.scitotenv.2017.01.159

    Web of Science

  22. Magnetization reversal in YIG/GGG(111) nanoheterostructures grown by laser molecular beam epitaxy Reviewed

    B.B. Krichevtsov, S.V. Gastev, S.M. Suturin, V.V. Fedorov, A.M. Korovin, V.E. Bursian, A.G. Banshchikov, M.P. Volkov, M. Tabuchi, and N.S. Sokolov

    Science and Technology of Advanced Materials     page: 1-27   2017.4

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  23. Protein crystallography beamline BL2S1 at the Aichi synchrotron

    Watanabe Nobuhisa, Nagae Takayuki, Yamada Yusuke, Tomita Ayana, Matsugaki Naohiro, Tabuchi Masao

    JOURNAL OF SYNCHROTRON RADIATION   Vol. 24   page: 338-343   2017.1

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    DOI: 10.1107/S1600577516018579

    Web of Science

  24. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties Reviewed

    N.S. Sokolov, V.V. Fedorov, A.M. Korovin, S.M. Suturin, D.A. Baranov, S.V. Gastev, B.B. Krichevtsov, K.Yu. Maksimova, A.I. Grunin, V.E. Bursian, L.V. Lutsev, M. Tabuchi

    J. Appl. Phys.   Vol. 119   page: 023903   2016

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  25. An advanced three-dimensional RHEED mapping approach to the diffraction study of Co/MnF2/CaF2/Si(001) epitaxial heterostructures Reviewed

    S. M. Suturin, A. M. Korovin, V. V. Fedorov, G. A. Valkovsky, M. Tabuchi and N. S. Sokolov

    J. Appl. Cryst.   Vol. 49   page: 1532-1543   2016

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  26. Hard X-ray XAFS beamline, BL5S1, at AichiSR Reviewed

    M. Tabuchi, H. Asakura, H. Morimoto1 N. Watanabe, and Y. Takeda

    Journal of Physics: Conference Series   Vol. 712   page: 012027   2016

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  27. Nanoclusters first: a hierarchical phase transformation in a novel Mg alloy Reviewed

    H. Okuda, M. Yamasaki, Y. Kawamura, M. Tabuchi, H. Kimizuka

    Sci Rep.   Vol. 5   page: 14186   2015

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  28. Epitaxial layers of nickel fluoride on Si(111): Growth and stabilization of the orthorhombic phase Reviewed

    A.G. Banshchikov, I.V. Golosovskii, A.V. Krupin, K.V. Koshmak, N.S. Sokolov, Yu.P. Chernenkov, M.A. Yagovkina, V.P. Ulin, M. Tabuchi

    Low-Dim. Sys. Phys. Solid State   Vol. 57   page: 1647-1652   2015

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  29. Anomalous structural behavior in the metamagnetic transition of FeRh thin films from a local viewpoint Reviewed

    Y. Wakisaka, Y. Uemura, T. Yokoyama, H. Asakura, H. Morimoto, M. Tabuchi, D. Ohshima, T. Kato, and S. Iwata

    Phys. Rev. B   Vol. 92   page: 184408   2015

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  30. Photocathode electron beam sources using GaN and InGaN with NEA surface Reviewed

    T. Nishitani, T. Maekawa, M. Tabuchi, T. Meguro, Y. Honda, H. Amano

    SPIE Proceedings   Vol. 9363   page: 10.1117/12.2076681   2015

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  31. Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy Reviewed

    Guangxu Ju, Shingo Fuchi, Masao Tabuchi, Hiroshi Amano, Yoshikazu Takeda

    Journal of Crystal Growth   Vol. 407   page: 6873   2014.1

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  32. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy Reviewed

    Guangxu Ju, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    J. Appl. Phys.   Vol. 115   page: 094906   2014

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  33. Photoemission lifetime of a negative electron affinity gallium nitride photocathode Reviewed

    T. Nishitani, M. Tabuchi, H. Amano, T. Maekawa, M. Kuwahara, and T. Meguro

    J. Vac. Sci. Technol. B   Vol. 32   page: 06F901   2014

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  34. Mean transverse energy and response time measurements of GaInP based photocathodes Reviewed

    Xiuguang Jin, Masahiro Yamamoto, Tsukasa Miyajima, Yosuke Honda, Takashi Uchiyama, Masao Tabuchi, and Yoshikazu Takeda

    Journal of Applied Physics   Vol. 116   page: 064501   2014

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  35. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

    Guangxu Ju, Yoshihiro Kato, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    Physica State Solidi C   Vol. 11   page: 393-396   2014

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  36. The strain effect on the superconducting properties of BaFe2(As, P)2 thin films grown by molecular beam epitaxy Reviewed

    T Kawaguchi, A Sakagami, Y Mori, M Tabuchi, T Ujihara, Y Takeda, and H Ikuta

    Supercond. Sci. Technol.   Vol. 27   page: 065005   2014

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  37. In-situ X-ray measurements of MOVPE growth of InGaN single quantum wells Reviewed

    G. Ju, S. Fuchi, M. Tabuchi, Y. Takeda

    J. Cryst. Growth   Vol. 370   page: 36-41   2013

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  38. In situ X-ray Reflectivity Measurements on Annealed InxGa1-xN Epilayer Grown by Metalorganic Vapor Phase Epitaxy Reviewed

    Guangxu Ju, Shingo Fuchi, Masao Tabuchi, and Yoshikazu Takeda

    Jpn. J. Appl. Phys.   Vol. 52   page: 08JB12   2013

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  39. Analysis of Cs/GaAs NEA surface by XAFS Reviewed

    K. Tsubota, M. Tabuchi, T. Nishitani, A. Era, Y. Takeda

    J. Phys.: Conf. Ser.   Vol. 430   page: 012079   2013

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  40. Critical current density and grain boundary property of BaFe2(As,P)2 thin films Reviewed

    A. Sakagami, T. Kawaguchi, M. Tabuchi, T. Ujihara, Y. Takeda, H. Ikuta

    Physica C   Vol. 494   page: 181-184   2013

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  41. In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy Reviewed

    G. Ju, S. Fuchi, M. Tabuchi, and Y. Takeda

    J. Appl. Phys.   Vol. 114   page: 124906   2013

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  42. Proximity effects and exchange bias in Co/MnF2(111) heterostructures studied by x-ray magnetic circular dichroism Reviewed

    S. Suturin, V. Fedorov, A. Banshchikov, D. Baranov, K. Koshmak, P. Torelli, J. Fujii, G. Panaccione, K. Amemiya, M. Sakamaki, T. Nakamura, M. Tabuchi, L. Pasquali, N. Sokolov

    J. Phys.: Condens. Matter   Vol. 25   page: 046002   2013

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  43. Substrate dependence of the superconducting properties of NdFeAs(O,F) thin films

    H. Uemura, T. Kawaguchi, T. Ohno, M. Tabuchi, T. Ujihara, Y. Takeda, H. Ikuta

    Solid State Communications   Vol. 152   page: 735-739   2012

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  44. Composition fluctuations in InP/GaInAs/InP heterostructures -- X-ray CTR scattering and cross-sectional STM measurement

    Y. Takeda, M. Masuda, M. Tabuchi, and A. Nakamura

    IOP Conf. Ser.   Vol. 24   page: 012004   2011

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  45. Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator Reviewed

    H. Tameoka, T. Kawase, M. Tabuchi, and Y. Takeda

    Physica Status Solidi C   Vol. 8 ( 2 ) page: 294-296   2011

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  46. X-ray characterization of GaN and related materials at growth temperatures -- system design and measurements

    Y. Takeda, K. Ninoi, G. Ju, H. Kamiya, T. Mizuno, S. Fuchi, and M. Tabuchi

    IOP Conf. Ser.   Vol. 24   page: 012003   2011

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  47. Evaluation of newly developed X-ray diffractometer equipped with Johansson monochromator

    M. Tabuchi, H. Tameoka, T. Kawase, and Y. Takeda

    IOP Conf. Ser.   Vol. 24   page: 012007   2011

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  48. Initial Stages of High-Temperature CaF2/Si(001) Epitaxial Growth Studied by Surface X-Ray Diffraction

    S. Suturin, N. Sokolov, A. Banshchikov, R. Kyutt, O. Sakata, T. Shimura, J. Harada, M. Tabuchi, and Y. Takeda

    J. Nanoscience and Nanotechnology   Vol. 11 ( 4 ) page: 2990-2996   2011

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  49. Molecular Beam Epitaxy Growth of Superconducting NdFeAs(O,F) Thin Films Using a F-Getter and a Novel F-Doping Method

    T. Kawaguchi, H. Uemura, T. Ohno, M. Tabuchi, T. Ujihara, Y. Takeda, and H. Ikuta

    Appl. Phys. Express   Vol. 4   page: 083102   2011

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  50. A study of an electron affinity of cesium telluride thin film

    H. Sugiyama, K. Ogawa, J. Azuma, K. Takahashi, M. Kamada, T. NishitaniM. Tabuchi, T. Motoki, K. Takashima, A. Era, and Y. Takeda,,

    Journal of Physics:ConferenceSeries   Vol. 298   page: 012014   2011

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  51. Superlattice Photocathode for High Brightness and Long NEA-surface lifetime

    T. Nishitani, M. Tabuchi, K. Motoki, T. Takashima, A. Era, and Y. Takeda

    Journal of Physics:ConferenceSeries   Vol. 298   page: 012010   2011

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  52. A study on EXAFS analysis of Cs/GaAs NEA surface

    A. Era, M. Tabuchi, T. Nishitani, and Y. Takeda

    Journal of Physics:ConferenceSeries   Vol. 298   page: 012012   2011

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  53. X-ray characterization at growth temperatures of InxGa1-xN growth by MOVPE

    G. Ju , K. Ninoi, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda

    Journal of Crystal Growth   Vol. 318   page: 1143-1146   2011

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  54. Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures

    K. Ninoi, G. Ju, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda

    Journal of Crystal Growth   Vol. 318   page: 1139-1142   2011

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  55. In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy Reviewed

    T. Kawaguchi, H. Uemura1, T. Ohno, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, and H. Ikuta

    Appl. Phys. Lett.   Vol. 97   page: 042509   2010

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  56. Ga and As composition profiles in InP/GaInAs/InP heterostructures -- x-ray CTR scattering and cross-sectional STM measurements

    Y. Takeda, M. Tabuchi, and A. Nakamura

    J. Phys.: Cond. Mat.   Vol. 22   page: 474011   2010

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  57. High-Brightness Spin-Polarized Electron Source Using Semiconductor Photocathodes Reviewed

    Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, and Takashi Meguro

      Vol. 48   page: 06FF02-1-3   2009

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  58. Measurement of X-ray CTR Signals from GaN/GaInN/GaN at High Temperatures Using Newly Developed Measurement System, Reviewed

    Y. Takeda, T. Mizuno, H. Kamiya, K. Ninoi, and M. Tabuchi

    Trans. Mat. Res. Soc. Jpn.   Vol. 34   page: 585-588   2009

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  59. Superlattice Photocathode with High Brightness and Long NEA-Surface Lifetime Reviewed

    Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, and Takashi Meguro,

    AIP Conf. Proc.   Vol. 1149   page: 1047-1051   2009

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  60. Study on Accumulation process of As atoms in InP/GaInAs/InP hetero-structures, Reviewed

    M. Tabuchi, A. Mori, H. Tameoka, K. Fujii, and Y. Takeda

    Trans. Mat. Res. Soc. Jpn.   Vol. 34   page: 593-595   2009

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  61. *Development of New X-ray CTR Scattering Measurement System Using Johansson Monochromator Reviewed

    M. Tabuchi, H. Tameoka, T. Kawase, and Y. Takeda

    Trans. Mat. Res. Soc. Jpn.   Vol. 34   page: 589-591   2009

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    A new X-ray CTR scattering measurement system was reported that was equipped with a Johansson monocromator to focus X-rays at a sample position. Using the focused X-rays and a two-dimensional detector, X-ray CTR scattering measurement was able to be carried out without moving any component of the measurement system. The results of the X-ray CTR scattering measurement using the new system successfully demonstrated that the CTR scattering profiles were comparable to that measured at PF using synchrotron radiation even when the measurement time was 10 minutes or longer. The results suggested that the new measurement system is useful for quick and in-situ X-ray CTR scattering measurements.

  62. Fluorescence EXAFS study of residual Ga in b-FeSi2 grownfrom Ga solvent Reviewed

    H. Yamada, M. Tabuchi, Y. Takeda, and H. Udono

    J. Phys., Conf. Ser.   Vol. 190   page: 012069   2009

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  63. Effect of Ln-site disorder on Tc of oxypnictide superconductor LnFeAsOF (Ln=Nd, Cd-Gd, and La-Dy) Reviewed

    Koshi Takenaka, Ryotaro Watanabe, Hiroomi Yamada, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Ikuta

    J. Phys. Soc. Jpn.   Vol. 78   page: 073701-1-4   2009

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  64. Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy Reviewed

    Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno, Ryotaro Watanabe, Masao Tabuchi, Toru Ujihara, Koshi Takenaka, Yoshikazu Takeda, and Hiroshi Ikuta

    Applied Physics Express   Vol. 2   page: 093002   2009

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  65. X-ray CTR scattering measurements using conventional X-ray source to study semiconductor hetero-interfaces Reviewed

    Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, and Y. Takeda

    Trans. Mat. Res. Soc. Jpn.   Vol. 33   page: 591-594   2008

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  66. Buried Heterostructure of Nitride Semiconductors Revealed by Laboratory Level X-ray CTR Scattering Reviewed

    Y. Takeda, Y. Maeda, T. Mizuno, and M. Tabuchi

    Trans. Mat. Res. Soc. Jpn.   Vol. 33   page: 547-550   2008

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  67. Surface X-ray diffraction studies of CaF2(110)/Si(001) interface formation Reviewed

    T. Shimura, S.M. Suturin, N.S. Sokolov, A.G. Banshchikov, R.N. Kyutt, O. Sakata, J. Harada, M. Tabuchi, Y. Takeda

    {Acta Cryst.   Vol. A64   page: C556   2008

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  68. *"Formation of patterned GaInAs/GaAs hetero-structures using amorphous arsenic mask" Reviewed

    Y. Noritake, T. Yamada, M. Tabuchi, and Y. Takeda

    J. Cryst. Growth   Vol. 301-302   page: 876-879   2007

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  69. *"Atomic scale analysis of MOVPE grown heterostructures by X-ray crystal truncation rod scattering measurement" Reviewed

    M. Tabuchi, and Y. Takeda

    J. Cryst. Growth   Vol. 298   page: 12-17   2007

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  70. "Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation" Reviewed

    Y. Ohtake, T. Eguchi, S. Miyake, W.S. Lee, M. Tabuchi, and Y. Takeda

    AIP Conference Proceedings   Vol. 879   page: 1619-1622   2007

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  71. "Analysis of In Distribution in GaInN/GaN Multilayer Structures by X-ray CTR Scattering" Reviewed

    M. Tabuchi, Y. Ohtake, and Y. Takeda

    Transactions of the Materials Research Society of Japan   Vol. 32 ( 9 ) page: 219-222   2007

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  72. "Study on Buried Interfaces in Semiconductor Heterostructures by X-ray Reflectivity" Reviewed

    Y. Takeda, and M. Tabuchi

    Transactions of the Materials Research Society of Japan   Vol. 32 ( 1 ) page: 187-192   2007

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  73. The importance to reveal buried interfaces in the semiconductor heterostructure devices Reviewed

    Y. Takeda, and M. Tabuchi

    J. Phys.: Conference Series   Vol. 83   page: 012002   2007

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  74. X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interface Reviewed

    M. Tabuchi, A. Mori, Y. Ohtake, and Y. Takeda

    J. Phys.: Conference Series   Vol. 83   page: 012031   2007

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    It has been successfully shown that X-ray CTR scattering measurement is a good tool to study the formation process of the InP/GaInAs interfaces grown by OMVPE even when the measurement is conducted after the growth. Using the X-ray CTR scattering measurement, the contributions of effects, i.e., surface roughness, adsorption of atoms, and exchange of
    atoms, on the formation process of InP/GaInAs interface were able to be discussed. The adsorption of As atoms on the GaInAs surface was shown to have the largest contribution on
    the abruptness of the interface.

  75. Structure and surface morphology of MnF2 epitaxial layers grown on grooved and ridged CaF2 (110) surface Reviewed

    R.N. Kyutt, A.K. Kaveev, N.S. Sokolov, A.A. Lomov, Y. Ohtake, M. Tabuchi, and Y. Takeda

    J. Phys. D: Appl   Vol. 40   page: 4896-4901   2007

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  76. "Surface morphology of ErP layers on InP and Ga0.52In0.48P" Reviewed

    A. Koizumi, H. Ohnishi, T. Inoue, T. Yamauchi, I. Yamakawa, H. Ofuchi, M. Tabuchi, A. Nakamura, Y. Takeda

    Thin Solid Films   Vol. 515   page: 543-546   2006

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  77. "Fluorescence EXAFS study on local structures around Eu atoms implanted in AlxGa1-xN" Reviewed

    H. Ofuchi, T. Nishiwaki, K. Takaba, K. Ogawa, M. Tabuchi, Y. Takeda, A. Wakahara, A. Yoshida, T. Ohshima, and H. Itoe

    Physica B   Vol. 376   page: 496-498   2006

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  78. "Lowest limit for detection of impurity concentration in semiconductors by fluorescence XAFS: resonant Raman scattering and angle depende Reviewed

    Y. Takeda, H. Ofuchi, H. Kyouzu, R. Takahashi and M. Tabuchi

    J. Synchrotron. Radiat.   Vol. 12   page: 494-498   2005

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  79. "Perturbation method of analysis of crystal truncation rod data" Reviewed

    I. K. Robinson, M. Tabuchi, S. Hisadome, R. Oga, and Y. Takeda

    J. Appl. Cryst.   Vol. 38   page: 299-305   2005

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  80. "Collection of reciprocal space maps using imaging plates at the Australian National Beamline Facility at the Photon Factory" Reviewed

    S.T. Mudie, K.M. Pavlov, M.J. Morgan, J.R. Hester, M. Tabuchi, and Y. Takeda

    J. Synchrotron Radiation   Vol. 11   page: 406-413   2004

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  81. "Applications ofstatistical X-ray diffraction theory for characterisation of multilayer systems" Reviewed

    K.M. Pavlov, V.I. Punegov, L. Kirste, N. Herres, Y. Takeda, M. Tabuchi, M. Morgan, S. Mudie, and J. Hester

    Izvestiya Akademii Nauk. Seriya fizicheskaya.   Vol. 68   page: 573-577   2004

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  82. "Crystalline structure and the role of low-temperature-deposited AlN and GaN on sapphire revealed by X-ray CTR scattering and X-ray reflectivity measurements" Reviewed

    Y. Takeda, M. Tabuchi, H. Amano, and I. Akasaki

    Surf. Rev. Lett.   Vol. 10   page: 537-541   2003

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  83. "High-resolution X-ray diffractometry investigation of interface layers in GaN/AlN structures grown on sapphire substrates" Reviewed

    S. Mudie, K. Pavlov, M. Morgan, M. Tabuchi, Y. Takeda, and H. Hester

    Surf. Rev. Lett.   Vol. 10   page: 513-517   2003

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  84. "Local structures around Er atoms doped in GaAs by low-temperature molecular beam exitaxy" Reviewed

    K. Ogawa, H. Ofuchi, H. Maki, T. Sonoyama, D. Inoue, M.Tabuchi, and Y. Takeda

    Materials Science in Semiconductor Processing   Vol. 6   page: 425-427   2003

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  85. "Fluorescence EXAFS analysis for ErP grown on by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3" Reviewed

    H. Ofuchi, T. Akane, S. Jinno, Y. Yang, N. Kuno, T. Hirata, M. Tabuchi, Y. Fujiwara, and Y. Takeda

    Materials Science in Semiconductor Processing   Vol. 6   page: 469-472   2003

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  86. "Composition dependences of InP/InGaAsP/InP interface structures analyzed by X-ray CTR scattering measurements" Reviewed

    M. Tabuchi, H. Kyouzu, M. Takemi, and Y. Takeda

    Appl. Surf. Sci   Vol. 216   page: 526-531   2003

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  87. "X-ray CTR scattering and interference for atomic-scale characterization of semiconductor heterostructures" Reviewed

    Y. Takeda, and M. Tabuchi

    J. Cryst. Growth   Vol. 237-239   page: 330-337   2002

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  88. "Characterization of local structures around In atoms in GaInN layers by fluorescence EXAFS measurements" Reviewed

    M. Tabuchi, D. Katou, H. Kyouzu, Y. Takeda, S. Yamaguchi, H. Amano, and I. Akasaki

    J. Cryst. Growth   Vol. 237-239   page: 1139-1142   2002

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  89. "Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers" Reviewed

    M. Tabuchi, H. Kyouzu, Y. Takeda, S. Yamaguchi, H. Amano, I. Akasaki

    J. Cryst. Growth   Vol. 237-239   page: 1133-1138   2002

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  90. "Observation of composition in surface monolayers by X-ray scattering spectra caused by crystal truncation and interferences"

    Journal of Synchrotron Radiation   Vol. 5   page: 899   1998

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  91. "Determination of composition in InP/InGaAs/InP quantum-well structures by X-ray crystal truncation rod scattering and quantum levels"

    Journal of Crystal Growth   Vol. 186   page: 48   1998

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  92. "Thermal diffusion of Er atomsδ-doped in Inp"

    Applied Surface Science   Vol. 130-132   page: 393   1998

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  93. "Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering"

    Journal of Crystal Growth   Vol. 189 ( 190/ ) page: 291   1998

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  94. EXAFS measurement on local structures around erbium atoms doped in GaAs with oxgen co-doping

    Defectin Semiconductors ICDS-19, Trans Tech Pub. LTD.     page: 1571   1997

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  95. Fe/Cu多層構造中のFe原子周辺局所構造の蛍光EXAFS法による解析

    日本応用磁気学会誌   Vol. 21   page: 82   1997

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  96. Distribution of As atoms in InP/InPAs(1ML)/InP heterostructures measured by X-ray CTR scattering

    Journal of Applied Physics   Vol. 81   page: 112   1997

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  97. Occupation site and distribution of δ-doped Er in InP measured by X-ray CTR csattering

    Applied Surface Science   Vol. 117 ( 118/ ) page: 785   1997

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  98. Atomic configuration study of δ-doped Er in InP by fluorescence EXAFS

    Applied Surface Science   Vol. 117 ( 118/ ) page: 781   1997

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▼display all

Presentations 55

  1. CT XAFS による価数の三次元可視化へのアプローチ:修正線形結合フィッティング Invited

    田渕雅夫

    X線分析研究懇談会  2020.9.18 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  2. Size-selected platinum nanocluster catalysts: catalystic activity for oxygen reduction reaction and structure characterization International conference

    K. Takahashi, H. Tsunoyama, A. Ohnuma, A. Velloth, M. Ehara, N. Ichikuni, M. Tabuchi, A. Nakajima

    Symposium on Size Selected Clusters  2020.2 

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    Event date: 2020.2

    Language:English  

    Venue:Davos, Switzerland   Country:Switzerland  

  3. AichiSR BL8S2 イメージング XAFS 測定システムの開発

    桜井郁也, 花田賢志, 永見哲夫, 田渕雅夫, 竹田普吾, 加藤弘泰

    第33回日本放射光学会/放射光科学合同シンポジウム 

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    Event date: 2020.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ウィンク愛知, 名古屋   Country:Japan  

  4. AichiSR テンダーX 線ビームライン BL6N1 の最新状況

    陰地宏, 柴田佳孝, 須田耕平, 田渕雅夫, 渡辺義夫, 竹田美和

    第33回日本放射光学会/放射光科学合同シンポジウム 

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    Event date: 2020.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ウィンク愛知, 名古屋   Country:Japan  

  5. あいちSR BL11S2 での LabVIEW と STARS の連携

    加藤弘泰, 竹田晋吾, 田渕雅夫, 竹田美和

    第33回日本放射光学会/放射光科学合同シンポジウム 

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    Event date: 2020.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ウィンク愛知, 名古屋   Country:Japan  

  6. XAFS 測定用ペレット作製効率化のためのダンシングミルを用いた粉末の自動混合方法

    髙濵謙太朗, 廣友稔樹, 塚田千恵, 福岡修, 田渕雅夫

    第33回日本放射光学会/放射光科学合同シンポジウム 

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    Event date: 2020.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ウィンク愛知, 名古屋   Country:Japan  

  7. MLCF法による2D/3D XAFSの計測時間短縮 Invited

    田渕雅夫

    PF研究会「XAFS・X線顕微鏡分光分析分野でのIMSS, PF戦略的利用に関する研究会」 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:高エネルギー加速器研究所 小林ホール   Country:Japan  

  8. CT XAFSへのMLCF法の応用

    田渕雅夫, 桜井郁也, 花田賢志, 竹田晋吾, 加藤弘泰, 小野泰輔, 森下賢一, 永見哲夫

    第22回XAFS討論会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  9. LPSO構造形成過程におけるクラスター構造変化

    伊藤樹人, 近都康平, 奥田浩司, 田渕雅夫, 君塚肇, 山崎倫昭, 河村能人

    第22回XAFS討論会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都大学   Country:Japan  

  10. XAFS測定とFDMNESによる液中プラズマ法で作製した金ナノ粒子の分散要因の解明

    塚田千恵, 廣友稔樹, 髙濵謙太朗, 小川智史, 八木伸也, 田渕雅夫

    第22回XAFS討論会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都大学   Country:Japan  

  11. Elemental Characterization of the Periostracum in the Corbicula Clam Hatched in Lake Biwa International conference

    Water and Environment Technology Conference 2019 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  12. 液中プラズマ法で作製した金ナノ粒子の水環境中における化学状態と局所構造

    塚田千恵, 廣友稔樹, 髙濱謙太朗, 小川智史, 八木伸也, 田渕雅夫

    第32回日本放射光学会年会放射光科学合同シンポジウム 

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    Event date: 2019.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:福岡国際会議場   Country:Japan  

  13. BL6N1 における二結晶分光器更新によるビーム性能向上及び最新整備状況

    村井崇章, 陰地宏, 柴田佳孝, 田渕雅夫, 渡辺義夫, 竹田美和

    第32回日本放射光学会年会放射光科学合同シンポジウム 

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    Event date: 2019.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:福岡国際会議場   Country:Japan  

  14. LPSO 構造形成過程におけるクラスター局所構造変化

    近都康平, 伊藤樹人, 杉野智裕, 奥田浩司, 田渕雅夫, 君塚肇, 山崎倫昭, 河村能人

    第32回日本放射光学会年会放射光科学合同シンポジウム 

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    Event date: 2019.1

    Language:Japanese   Presentation type:Poster presentation  

    Venue:福岡国際会議場   Country:Japan  

  15. マッピング XAFS 新規手法 MLCF 法を用いた NiMH 正極の反応分布可視化

    坂本廉, 田渕雅夫, 竹田晋吾, 小西俊輔, 鈴木俊正, 加藤真樹, 坂本弘之, 永見哲夫

    第59回電池討論会 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪府立国際会議場   Country:Japan  

  16. 琵琶湖産シジミの殻皮中の硫黄と鉄の化学状態分析

    竹本邦子, 馬場大哉, 吉村真史, 瀬川有香, 田渕雅夫, 渡辺義夫, 太田俊明

    日本陸水学会 

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    Event date: 2018.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:岡山大学   Country:Japan  

  17. Characterizations of the gold nanoparticle prepared by solution plasma method in CsCl aqueous solution by means of XAFS measurements International conference

    C. Tsukada, S. Ogawa, S. Yagi, M. Tabuchi

    17th International Conference on X-Ray Absorption Fine Structure 

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    Event date: 2018.7

    Language:English   Presentation type:Poster presentation  

    Venue:Krakow, Poland   Country:Poland  

  18. Modified linear combination fitting for large-area two dimensional chemical state mapping International conference

    M. Tabuchi, R. Sakamoto, S. Takeda, S. Konishi, T. Suzuki, and T. Nagami

    17th International Conference on X-Ray Absorption Fine Structure 

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    Event date: 2018.7

    Language:English   Presentation type:Poster presentation  

    Venue:Krakow, Poland   Country:Poland  

  19. CHARACTERIZATION AND THE PHYSICAL PROPERTIES OF MBE GROWN NdFeAsO THIN FILMS International conference

    The International Symposium on Superconductivity (ISS2009) 

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    Event date: 2009.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  20. MBE GROWTH AND CHARACTERIZATION OF NdFeAsO THIN FILMS International conference

    The International Symposium on Superconductivity (ISS2009) 

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    Event date: 2009.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  21. High Brightness Electron Source Using Semiconductor Photocathodes with Negative Electron Affinity Surface for Pulse Electron Gun International conference

    The Twelfth Frontiers of Electron Microscopy in Materials Science(FEMMS2009) 

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    Event date: 2009.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  22. *Fluorescence EXAFS study of residual Ga in β-FeSi2 grown from Ga solvent International conference

    The 14th International Conference on X-ray Absorption Fine Structure (XAFS14) 

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    Event date: 2009.7

    Language:English   Presentation type:Oral presentation (general)  

  23. *Influence of Growth Rate and Temperature on InP/GaInAs Interface Structure Analyzed by X-ray CTR Scattering Measurement International conference

    2009 Indium Posphide and Related Materials (IPRM2009) 

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    Event date: 2009.5

    Language:English   Presentation type:Oral presentation (general)  

  24. MOVPE reactor and X-ray CTR measurement system for GaN and related compounds

    8th Akasaki Research Center Symp. 

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    Event date: 2008.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  25. Formation of patterned GaInAs/GaAs hetero-structures using amorphous arsenic mask in molecular-beam epitaxy International conference

    14th Inter. Conf. Thin Films and Reactive Sputter Deposition 

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    Event date: 2008.11

    Language:English   Presentation type:Oral presentation (general)  

  26. Superlattice Photocathode With High Brightness And Long NEA-surface Lifetime International conference

    Workshop on Sources of Polarized Electrons and High Brightness Electron Beams(PESP2008) 

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    Event date: 2008.10

    Language:English   Presentation type:Oral presentation (general)  

  27. Surface X-ray diffraction studies of CaF2(110)/Si(001) interface formation, International conference

    XXI Congress and General Assembly of the International Union of Crystallography 

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    Event date: 2008.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  28. Co Epitaxial Nanoparticles on CaF2/Si(111): MBE Growth, GIXRD and X-ray Reflectometr International conference

    Meeting Booklet of International Conference on Surface X-ray and Neutron Scattering 

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    Event date: 2008.7

    Language:English   Presentation type:Oral presentation (general)  

  29. Atomic structure of CaF2(110)/Si(001) interface studied byby surface X-ray diffraction International conference

    10th International Conference on Surface X-ray and Neutron Scattering SXNS-10 

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    Event date: 2008.7

    Language:English   Presentation type:Oral presentation (general)  

  30. X-ray CTR scattering analysis of as accumulation on GaInAs surface and growth temperature effects International conference

    Indium Posphide and Related Materials 2008 

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    Event date: 2008.5

    Language:English   Presentation type:Poster presentation  

  31. "X-ray CTR scattering measurements to reveal the effect of the growth interruption processes on the InP/InGaAs interface structures " International conference

    The 15th International Conference on Crystal Growth (ICCG15) 

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    Event date: 2007.8

    Language:English   Presentation type:Poster presentation  

  32. "Mechanisms of As distribution in InP on GaInAs layer grown by OMVPE " International conference

    The 15th International Conference on Crystal Growth (ICCG15) 

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    Event date: 2007.8

    Language:English   Presentation type:Poster presentation  

  33. "Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering " International conference

    Indium Posphide and Related Materials 2007 (IPRM2007) 

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    Event date: 2007.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  34. " Analysis of In distribution in GaInN/GaN multilayer structures by X-ray CTR scattering"

    6th Akasaki Research Center Symp. 

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    Event date: 2006.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  35. " Formation of patterned GaInAs/GaAs hetero-structures using amorphous arsenic mask" International conference

    14th International Conference on Molecular Beam Epitaxy 

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    Event date: 2006.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  36. "JAEA photocathode DC-gun for an ERL injector" International conference

    28th Inter. Free Electron Laser Conf. 

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    Event date: 2006.8

    Language:English   Presentation type:Oral presentation (general)  

  37. " Measurement of composition grading at InP/GaInAs/InP hetero-interfaces by X-ray CTR scattering using synchrotron radiation" International conference

    9 International conference on Synchrotron Radiation Instrumentation 

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    Event date: 2006.5

    Language:English  

  38. " Atomic scale analysis of MOVPE grown heterostructures by X-ray crystal truncation rod scattering measurement" International conference

    13 International conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XIII) 

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    Event date: 2006.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  39. " Investigation of hetero-interfaces formed in InP/GaInAs/InP structures with different growth rates" International conference

    Indium Posphide and Related Materials 2006 (IPRM2006) 

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    Event date: 2006.5

    Language:English   Presentation type:Poster presentation  

  40. " Challenge to analyze In distributions in GaInN/GaN multilayer structures at atomic-scale by X-ray CTR scattering measurement"

    5th Akasaki Research Center Symp. 

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    Event date: 2005.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  41. " Fluorescence EXAFS study on local structures around Eu atoms implanted in Al_xGa_1-xN" International conference

    The 23rd International Conference on Defects in Semiconductors (ICDS23) 

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    Event date: 2005.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  42. " Surface morphology of ErP layers on InP and GaInP" International conference

    13th International Conference on Thin Films/8th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ICTF13/ACSIN8) 

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    Event date: 2005.6

    Language:English   Presentation type:Poster presentation  

  43. " Realization of flat ErAs layers in GaAs/AlAs/ErAs/AlAs/GaAs RTD structure using an interface control layer" International conference

    13th International Conference on Thin Films/8th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ICTF13/ACSIN8) 

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    Event date: 2005.6

    Language:English   Presentation type:Poster presentation  

  44. " Realization of square quantum-well structure InP/GaInAs/InP by organometallic vapor phase epitaxy" International conference

    2005 Inter. Conf. Indium Phosphide and Related Materials (IPRM2005) 

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    Event date: 2005.5

    Language:English   Presentation type:Oral presentation (general)  

  45. " X-ray non-invasive characterization of GaN/GaInN/GaN quantum-well structures "

    4th Akasaki Research Center Symp. 

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    Event date: 2004.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  46. " How thin can we make square profiles in InP/GaInAs/InP wells by organometallic vapor phase epitaxy? --- X-ray CTR scattering measurements --- " International conference

    2004 Inter. Conf. Indium Phosphide and Related Materials 

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    Event date: 2004.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  47. " Control of group-III atoms distribution in thin quantum wells analyzed by X-ray CTR scattering measurement " International conference

    2004 Inter. Conf. Indium Phosphide and Related Materials 

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    Event date: 2004.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  48. "Coherent and diffuse scattering of synchrotronradiation by ultrathin InGaP and InGaAs layers" International conference

    Modern analysis methods of diffraction data (topography, diffractometry, electron microscopy)/ II International scientific Seminar 

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    Event date: 2004.5

    Language:English   Presentation type:Oral presentation (general)  

  49. "Synchrotron x-ray scattering from planar nanostructures " International conference

    Experiment and numerical modeling X-ray optics-2004 Conference 

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    Event date: 2004.5

    Language:English   Presentation type:Oral presentation (general)  

  50. " Investigation of InGaN nanostructures bymethods of synchrotron radiation " International conference

    Proceedings of “Nanosizesystems" Conference 

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    Event date: 2004

    Language:English   Presentation type:Oral presentation (general)  

  51. " Interface structures of OMVPE-grown GaAs/GaInP/GaAs studied by X-ray CTR scattering measurement" International conference

    2003 Inter. Conf. Indium Phosphede and Related Materials 

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    Event date: 2003.5

    Language:English   Presentation type:Oral presentation (general)  

  52. " Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy" International conference

    1st Int. Symp. Point Defect and Nonstoichiometry 2003 (ISPN 2003) 

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    Event date: 2003.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  53. " Fluorescence EXAFS analysis for ErP grown on InP by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3 " International conference

    1st Int. Symp. Point Defect and Nonstoichiometry 2003 (ISPN 2003) 

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    Event date: 2003.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  54. " Composition dependences of InP/InGaAsP/InP interface structures analyzed by X-ray CTR scattering measurements "

    4th Int. Symp. Control of Semiconductor Interfaces 

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    Event date: 2002.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  55. " High-resolution X-ray diffractometry investigation of interface layers in GaN/AlN structures grwon on sapphire substrates" International conference

    7th International Conference on the Structure of Surfaces (ICSOS) 

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    Event date: 2002.7

    Language:English   Presentation type:Oral presentation (general)  

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Research Project for Joint Research, Competitive Funding, etc. 3

  1. モノづくり産業プラットフォームの形成

    2019.8 - 2022.3

    知の拠点あいち重点研究プロジェクト 

    田渕雅夫

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    Grant type:Competitive

  2. XAFS測定に関連した技術開発

    2015

    企業からの受託研究 

  3. 半導体結晶成長評価のための新しい回折計の開発

    2008 - 2009

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    結晶成長その場観察に利用可能な、結晶を動かさないX線回折装置の開発。

KAKENHI (Grants-in-Aid for Scientific Research) 4

  1. Interaction between transition metal impurities and dislocations in diamond crystals

    Grant number:20K04573  2020.4 - 2023.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Authorship:Coinvestigator(s) 

  2. Semiconductor electron beam source that brings fine-area dynamics observation technology to damage sensitive samples

    Grant number:19H00666  2019.4 - 2022.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

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    Authorship:Coinvestigator(s) 

  3. 結晶成長その場観察を可能とするX線回折測定装置の開発

    2011.4 - 2014.3

    科学研究費補助金  基盤研究(B)

    田渕雅夫

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    Authorship:Principal investigator 

  4. 半導体結晶成長その場観察のためのX線散乱測定装置の開発

    2007

    科学研究費補助金  基盤研究(B)(一般),課題番号:19360006

    田渕 雅夫

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    Authorship:Principal investigator 

 

Teaching Experience (On-campus) 13

  1. 物質科学特別講義

    2021

  2. 物理工学特別講義

    2021

  3. 物理工学セミナー

    2021

  4. Foundations of Electromagnetics II

    2011

  5. 電磁気学II

    2011

  6. ベンチャービジネス特論I

    2011

  7. 最先端理工学実験

    2011

  8. 最先端理工学特論

    2011

  9. 半導体材料学

    2011

  10. ナノデバイス特論

    2010

  11. ベンチャービジネス特論I

    2010

  12. 最先端理工学実験

    2010

  13. 最先端理工学特論

    2010

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Social Contribution 10

  1. XAFS夏の学校

    Role(s):Lecturer

    日本XAFS研究会  2021.9

  2. 結晶工学スクール

    Role(s):Lecturer, Planner

    応用物理学会 結晶工学分科会  2021.8

  3. 2020年度XAFS入門講習会

    Role(s):Lecturer, Organizing member

    名古屋大学シンクロトロン光研究センター  2020.12

  4. 結晶工学スクール

    Role(s):Lecturer, Planner, Organizing member

    応用物理学会 結晶工学分科会主催  2020.9

  5. 茨城県、人材育成事業 研修/応用コース 放射光実習

    Role(s):Lecturer

    茨城県人材育成事業  2020.1

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    Audience: Researchesrs, Governmental agency

    Type:Visiting lecture

  6. シンクロトン光利用者研究会(EXAFS解析講習会)

    Role(s):Lecturer

    愛知県、科学技術交流財団、大学連合(名古屋大学)主催  2019.10

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    Audience: Graduate students, Researchesrs, Company

    Type:Visiting lecture

  7. 第22回XAFS討論会 ナイトセッション「XAFSビームラインの現状紹介」

    Role(s):Lecturer, Informant

    第22回XAFS討論  2019.9

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    Audience: Graduate students, Researchesrs, Scientific

    Type:Lecture

  8. 2019年度シンクロトン光利用者研究会(入門講習会)

    Role(s):Lecturer

    愛知県、科学技術交流財団、大学連合(名古屋大学)主催  2019.6

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    Audience: Graduate students, Researchesrs, Company

    Type:Lecture

  9. 結晶工学スクール

    Role(s):Lecturer

    応用物理学会 結晶工学分科会  2002

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    Audience: Graduate students, Researchesrs, Company

    Type:Lecture

  10. 2021年度XAFS解析講習会

    Role(s):Lecturer

    名古屋大学シンクロトロン光研究センター、あいちシンクロトロン光センター 

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Media Coverage 1

  1. PF研究会「XAFS・X線顕微鏡分光分析分野でのIMSS, PF戦略的利用に関する研究会」

    高エネルギー加速器研究所  2019.12

Academic Activities 3

  1. 放射光共同利用実験審査委員会委員

    Role(s):Review, evaluation, Peer review

    高エネルギー加速器研究機構 物質構造科学研究所  2014

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    Type:Scientific advice/Review 

  2. XAFS討論会 論文委員

    Role(s):Review, evaluation

    日本XAFS研究会  2009

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    Type:Scientific advice/Review 

  3. 利用研究課題選定委員会レフリー

    Role(s):Peer review

    (財)高輝度光科学研究センター  2003

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    Type:Peer review