Presentations -
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スパッタリング法によるアモルファスシリコン薄膜の膜特性のタグチメソッドによる最適化の検討
味田晧平、田畑彰守
令和5年電気学会全国大会 2023.3.17
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SiC:H薄膜を界面層に用いたヘテロ接合素子の特性
水谷 凌、田畑 彰守
第18回 Cat-CVD研究会 2021.7.10
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スパッタリング法によるp型アモルファスシリコン薄膜のヘテロ接合素子への応用
小島弘道、田畑彰守
電気・電子・情報関係学会東海支部連合大会
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nc-3C-SiC:H/c-Siヘテロ接合素子に与えるバッファ層納入の影響
亀山航太、田畑彰守
第１６回Cat-CVD研究会
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Admittance characteristics of nanocrystalline SiC:H/crystalline Si heterojunction diodes fabricated by hot-wire chemical vapor deposition International conference
A. Tabata, Y. Imori, H. Ozeki
8th International Conference on Hot-Wire CVD (Cat-CVD) process
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nc-3C-SiC:H/c-Siヘテロ接合素子特性に与える電極金属の影響
尾関浩幸、田畑彰守
第11回Cat-CVD研究会
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Electrical properties of nc-3C-SiC:H/c-Si heterojunction diodes prepared by HW-CVD International conference
Y. Imori, A. Tabata
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Effect of film thickness on electrical properties of nc-3C-SiC:H/c-Si heterojunction diodes prepared by HW-CVD International conference
Y. Imori, A. Tabata
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c-Si/nc-3C-SiC:H heterojunction diodes with buffer layer International conference
R. Ushikusa, A. Tabata
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HW-CVD法によるnc-3C-SiC:H/c-Siヘテロ接合ダイオードの特性に与える水素ガス流量の影響
井森嘉一、田畑彰守
第10回Cat-CVD研究会
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Structural and electrical properties of μc-Si:H/nc-3C-SiC:H two-layered thin films prepared by hot-wire CVD methhod International conference
7th International Conference on Hot-Wire Chemical Vapor Deposition
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Thickness dependence of structural and electrical properties of HWCVD nc-3C-SiC:H/c-Si heterojunctions International conference
7th International Conference on Hot-Wire Chemical Vapor Deposition
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HW-CVD法を用いたμc-Si:H/nc-3C-SiC:H二層膜の膜構造及び電気的特性
渡邉卓也、田畑彰守
第９回Cat-CVD研究会
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Heterojunction diodes of N-doped nanocrystalline 3C-SiC:H prepared on p-type c-Si from SiH4/CH4/N2 with varying H2 dilution ratios International conference
S. Sato, A. Tabata
24th International Conference on Amorphous and Nanocrystalline Semiconductors
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ナノ結晶3C-SiC:H薄膜を用いたヘテロ接合の素子特性への水素希釈ガスの与える影響
佐藤慎一郎、田畑彰守
第８回Cat-CVD研究会
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N2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire-temperature International conference
6th International Conference on Hot-Wire CVD (Cat-CVD) process
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Structural changes in tungsten wire and their effect on the properties of hydrogenated nanocrystalline cubic silicon carbide thin films International conference
6th International Conference on Hot-Wire CVD (Cat-CVD) process
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HW-CVD（Cat-CVD）法によるナノ結晶3C-SiC:H薄膜の低温形成（依頼講演）
田畑彰守
第7回Cat-CVD研究会
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Formation of silicon nitride layer on microcrystalline silicon thin films by hot-wire chemical vapor method using nitrogen and hydrogen gases International conference
17th European Conference on Chemical Vapor Deposition and CVD-XVII
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Influences of N2 and H2 gas flow rates on properties of n-type nanocrystalline 3C-SiC:H thin films prepared by hot-wire chemical vapor deposition International conference
17th European Conference on Chemical Vapor Deposition and CVD-XVII
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N2ガスを用いたホットワイヤー気相法による微結晶シリコン薄膜への窒化層形成
間崎耕司、田畑彰守、近藤明弘
第6回Cat-CVD研究会
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ガラス基板上へのｎ型ナノ結晶3C-SiC薄膜の低温堆積とその高品質化
星出純希、田畑彰守、北川明彦、近藤明弘
第17回SiC及び関連ワイドギャップ半導体研究会
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Improvement of electrical properties of n-type nanocrystalline 3C-SiC thin films prepared by hot-wire CVD at high H2-dilution International conference
30th International Symposium on Dry Process
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Enhancement of crystal growth in μc-Si:H thin film deposition by H radical-assisted magnetron sputtering and the plasma diagnostics. International conference
AVS 55th International Symposium and Exhibition
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Enhancement of crystal growth in μc-Si:H thin film deposition by H radical-assisted magnetron sputtering. International conference
1st International Conference on Microelectronics and Plasma Technology
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Properties of hydrogenated microcrystalline silicon thin films prepared by hot-wire CVD at high gas pressure conditions International conference
5th International Conference on Hot-Wire CVD (Cat-CVD) process
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N2 decomposition by hot wire and N2 post-deposition treatment on hydrogenated microcrystalline silicon thin films. International conference
5th International Conference on Hot-Wire CVD (Cat-CVD) process
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Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N2 as doping gas International conference
5th International Conference on Hot-Wire CVD (Cat-CVD) process
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Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2. International conference
5th International Conference on Hot-Wire CVD (Cat-CVD) process
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Growth of silicon carbide thin films by hot-wire chemical vapor deposition form SiH4/CH4/H2. International conference
5th International Conference on Hot-Wire CVD (Cat-CVD) process
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N2ガスをドーピング原料としたn型ナノ結晶3C-SiC薄膜の開発
星出純希、田畑彰守、北川明彦、近藤明弘
第5回Cat-CVD研究会
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ホットワイヤーによるN2ガス分解
間崎耕司、田畑彰守、北川明彦、近藤明弘
第5回Cat-CVD研究会
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Enhancement of crystal growth in Si thin film deposition by H radical-assisted magnetron sputtering. International conference
1st International Conference on Plasma-Nanotechnology & Science
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Si sputtering deposition by Ar discharge with H radicals and the film evaluation International conference
18th Symposium of MRS
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SiH4/CH4/H2を用いたホットワイヤーCVD方によるナノ結晶SiC薄膜の膜構造のH2ガス流量依存性
SiC及び関連ワイドギャップ半導体研究会
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Effect of hydrogen radicals on silicon sputtering with argon-hydrogen mixture gas
6th Asian-European International Conference on Plasma SurfaceEngineering AEPSE
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Preparation of nanocrystalline silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances International conference
16th European Conference on Chemical Vapor Deposition
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フィラメント基板間距離を変えて作製したCat-CVD法によるナノ結晶3C-SiC薄膜の膜特性
第4回Cat-CVD研究会
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Properties of nanocrystalline silicon carbide thin films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at various substrate temperatures International conference
2nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
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Electrical properties of Microcrystalline silicon thin films prepared by RF magnetron sputtering International conference
20th Symposium on Plasma Science for Materials
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化学反応支援マグネトロンスパッタリングによる微結晶シリコン成膜とそのプラズマ診断
深谷康太, 佐々木浩一, 高軍思, 田畑彰守, 豊田浩孝, 岩田聡, 菅井秀郎
第24 回プラズマプロセシング研究会
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Influence of gas-pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system International conference
4th International Conference on Hot-Wire CVD (Cat-CVD) process
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Structural Change of Hot-Wire CVD Silicon Carbide Thin Films by Gas Flow Rates International conference
4th International Conference on Hot-Wire CVD (Cat-CVD) process
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Hydrogenated microcrystalline silicon films by hot wire chemical vapor deposition with very high hydrogen dilution and two-step deposition International conference
4th International Conference on Hot-Wire CVD (Cat-CVD) process
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Cat-CVD法によるナノ結晶SiC薄膜作成時のガス圧力の与える影響
香村勇介、田畑彰守、成田知岐、近藤明弘
第3回Cat-CVD研究会
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Preparation of B-doped microcrystalline silicon thin films by RF magnetron sputtering International conference
3rd World Conference on Photovoltaic Energy Conversion
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Influences of filament temperature on the structure and optical properties of nanocrystalline silicon carbide films by hot-wire CVD. International conference
3rd World Conference on Photovoltaic Energy Conversion
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Highly photoconductive hydrogenated amorphous silicon carbide thin films prepared by hot-wire chemical vapor deposition International conference
21st International Conference on Amorphous and Nanocrystalline Semiconductors
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Effect of hot-wire passivation on film properties of hydrogenated microcrystalline silicon films International conference
21st International Conference on Amorphous and Nanocrystalline Semiconductors
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Nanocrystalline cubic silicon carbide prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at a low substrate temperature International conference
21st International Conference on Amorphous and Nanocrystalline Semiconductors
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CH4を炭素源に用いたCat-CVD法によるナノ結晶SiC薄膜の作成
香村勇介、田畑彰守、成田知岐、近藤明弘、水谷照吉
第2回Cat-CVD研究会
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Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition
3rd International Conference on Hot-Wire CVD (Cat-CVD) process
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Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition International conference
3rd International Conference on Hot-Wire CVD (Cat-CVD) process
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メタンを炭素源として用いたHW-CVD法によるワイドバンドギャップ炭化シリコン薄膜の作成
田畑彰守、水谷照吉
第1回Cat-CVD研究会
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Preparation of microcrystalline silicon by DC-RF coupled magnetron sputtering
20th International Conference on Amorphous and Microcrystalline Semiconductors
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Band-gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition
20th International Conference on Amorphous and Microcrystalline Semiconductors
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Structure of amorphous and microcrystalline silicon films prepared at various gas pressure by hot-wire chemical vapor deposition
20th International Conference on Amorphous and Microcrystalline Semiconductors
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Dependence on gas pressure of μc-Si:H prepared by RF magnetron sputtering International conference
7th International Symposium on Sputtering and Plasma Processes
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Effect of total gas pressure on hydrogenated amorphous silicon carbide films by hot-wire CVD International conference
3rd World Conference on Photovoltaic Energy Conversion, 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference
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電力需要および日射量の実績からみた太陽光発電システムのｋＷ価値
加藤丈佳, 長江宣久, 田畑彰守, 横水康伸, 岡本達生, 鈴置保雄
電気学会論文誌B
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Structure of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition method International conference
12th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide
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Tungsten-Temperature Dependence of the Properties of Hydrogenated Amorphous Silicon Carbide Films Prepared by Hot-Wire CVD Method International conference
19th International Conference on Amorphous and Micro- crystalline Semiconductors
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Substrate-temperature-dependence of film structure of μc-Si:H prepared by rf magnetron sputtering International conference
6th International Symposium on Sputtering and Plasma Processes
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The changes of structural and electrical properties of hydrogenated amorphous silicon carbide films by pulse-modulated plasma
11th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide