Updated on 2023/03/30
博士(工学) （ 名古屋大学 ）
amorphous and microcrystalline silicon
nanocrysatalline silicon carbide
hot-wir CVD
magnetron sputtering
silicon nitride
Others / Others / Electronic and Electrical Material Science
Others / Others / Thin Film and Surface Interface Physical Properties
Development of amorphous and nanocrystalline semiconductor thin films and their applications
Development of insulating thin films and their application
Development of thin film growth techniques
Nagoya University Graduate School, Division of Engineering
- 1990
Country： Japan
Nagoya University Faculty of Science
- 1985
Country： Japan
日本物理学会
電気学会
応用物理学会
日本素材物性学会山崎賞
1992
Temperature dependences of current density-voltage and capacitance-frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes Reviewed
Akimori, Tabata
Thin Solid Films Vol. 619 page： 323 - 327 2016
Current density-voltage and admittance characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes prepared with varying H2 gas flow rates Reviewed
A. Tabata, Y. Imori
Solid-State Electronics Vol. 104 page： 33-38 2015.2
Structural changes in tungsten wire and their effect on the properties of hydrogenated nanocrystalline silicon carbide thin films Reviewed
A. Tabata, A. Naito
Thin Solid Films Vol. 519 ( 14 ) page： 4451 – 4454 2011.5
N2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire-temperature Reviewed
Y. Omori, A. Tabata, A. Kondo
Thin Solid Films Vol. 519 ( 14 ) page： 4535 – 4537 2011.5
Enhancement of Crystal Growth in Si Thin Film Deposition by H-Radical-Assisted Magnetron Sputtering Reviewed
K. Fukaya, A. Tabata, K. Sasaki
Jpn. J. Appl. Phys. Vol. 49 ( 1 ) page： 015501 2010
* Highly-conductive nitrogen-doped hydrogenated nanocrystalline cubic silicon carbide thin films prepared by hot-wire chemical vapor deposition Reviewed
A. Tabata, Y. Hoshide, A. Kondo
Material Science and Engineering B Vol. 175 page： 201-206 2010
* Influence of hydrogen addition and gas pressure on silicon nitride layer formation on microcrystalline silicon thin films by a hot-wire chemical vapor method using nitrogen gas Reviewed
A. Tabata, K. Mazaki, A. Kondo
Surf. Coat. Technol. Vol. 204 ( 16-17 ) page： 2559- 2563 2010
* Film-thickness dependence of structural and electrical properties of boron-doped hydrogenated microcrystalline silicon prepared by radiofrequency magnetron sputtering Reviewed
A. Tabata, J. Nakano, K. Mazaki, K. Fukaya,
J. Non-Cryst. Solids Vol. 356 page： 1131-1134 2010
Mechanism of hydrogenated microcrystalline Si film deposition by magnetron sputtering employing a Si target and H2/Ar gas mixture Reviewed
K. Fukaya, A. Tabata, K. Sasaki
Jpn. J. Appl. Phys. Vol. 48 ( 3 ) page： 035507 2009
Formation of silicon nitride layer on microcrystalline silicon thin films by hot-wire chemical vapor method using nitrogen and hydrogen gases Reviewed
A. Tabata, K. Mazaki, A. Kondo
ECS Transaction Vol. 25 ( 8 ) page： 339-342 2009
Influences of N2 and H2 gas flow rates on properties of n-type nanocrystalline 3C-SiC:H thin films prepared by hot-wire chemical vapor deposition Reviewed
A. Tabata, Y. Hoshide, A. Kondo
ECS Transaction Vol. 25 ( 8 ) page： 207-212 2009
N2 decomposition by hot wire and N2 post-deposition treatment on hydrogenated microcrystalline silicon thin films. Reviewed
K. Mazaki A. Tabata, A. Kitagawa, A. Kondo
Thin Solids Films Vol. 517 page： 3452-3455 2009
Growth of silicon carbide thin films by hot-wire chemical vapor deposition form SiH4/CH4/H2. Reviewed
A. Tabata, Y. Konura, T. Narita, A. Kondo
Thin Solids Films Vol. 517 page： 3516-3519 2009
Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N2 as doping gas Reviewed
Y. Hoshide, A. Tabata, A. Kitagawa A. Kondo
Thin Solids Films Vol. 517 page： 3524-3527 2009
Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2 Reviewed
Y. Hoshide, Y. Komura A. Tabata, A. Kitagawa A. Kondo
Thin Solids Films Vol. 517 page： 3520-3523 2009
Structural Changes of Hot-Wire CVD Silicon Carbide Thin Films Induced by Gas Flow Rates Reviewed
A. Tabata, M. Mori
Thin Solid Films Vol. 516, ( 5 ) page： 626-629 2008.1
Properties of nanocrystalline silicon carbide thin films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at various substrate temperatures Reviewed
A. Tabata,Y. Komura, Y. Hoshide, T. Narita, A. Kondo
Jpn. J. Appl. Phys. Vol. 47 ( 1 ) page： 561-565 2008.1
Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system Reviewed
Y. Komura, A. Tabata, T. Narita, A. Kondo
Thin Solid Films Vol. 516 ( 516 ) page： 633-636 2008.1
Influence of ion bombardment on microcrystalline silicon growth during radio-frequency magnetron sputtering Reviewed
A. Tabata, K. Fukaya, T. Mizutani
Vacuum Vol. 82 page： 777-781 2008
Film properties of nanocrystalline 3C-SiC thin films deposited on glass substrate by hot-wire chemical vapor deposition using CH4 as a carbon source Reviewed
Y. Komura A. Tabata T. Narita M. Kanaya A. Kondo T. Mizutani
Jpn J. Appl. Phys. Vol. 46 ( 1 ) page： 45-50 2007.1
Preparation of nanocrystalline silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances Reviewed
A. Tabata, Y. Komura
Surf. Coat. Technol. Vol. 201 page： 8986-8990 2007
Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition Reviewed
T. Daimaru, A. Tabata, T. Mizutani
Thin Solid Films Vol. 501 ( 1-2 ) page： 102-106 2006
Effect of hot-wire passivation on film properties of hydrogenated microcrystalline silicon films Reviewed
S. Mitsuhashi, A. Tabata, T. Mizutani
J. Non-Cryst. Solids Vol. 352 page： 2943-2946 2006
Nanocrystalline cubic silicon carbide prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at a low substrate temperature Reviewed
Y. Komura, A. Tabata, T. Narita, A. Kondo, T. Mizutani
J. Non-Cryst. Solids Vol. 352 page： 1367-1370 2006
Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition Reviewed
M. Mori, A. Tabata, T. Mizutani
Thin Solid Film Vol. 501 ( 1-2 ) page： 177-180 2006
Influence of target direct current bias voltage on the film structure of hydrogenated microcrystalline silicon prepared by direct-current- radiofrequency coupled magnetron sputtering Reviewed
K. Fukaya, A. Tabata, T. Mizutani
Thin Solid Films Vol. 478 ( 1-2 ) page： 132-136 2005
Control of crystallinity and deposition rate of hydrogenated silicon thin films prepared by radio frequency magnetron sputtering using layer-by layer growth Reviewed
A. Tabata, K. Okada, T. Mizutani, Y. Suzuoki
Thin Solid Film Vol. 491 ( 1-2 ) page： 148-152 2005
Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition
T. Daimaru, A. Tabata, T. Mizutani
3rd International Conference on Hot-Wire CVD (Cat-CVD) process page： 389-392 2004
Dependence on gas pressure of μc-Si:H prepared by RF magnetron sputtering Reviewed
K. Fukaya, A. Tabata, T. Mizutani
Vacuum Vol. 74 ( 3-4 ) page： 561-565 2004
Band-gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition Reviewed
A. Tabata, M. Kuroda, M. Mori, T. Mizutani, Y. Suzuoki
Journal of Non-Crystalline Solids Vol. 338-340 page： 521-524 2004
Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition
M. Mori, A. Tabata, T. Mizutani
3rd International Conference on Hot-Wire CVD (Cat-CVD) process page： 393-395 2004
Preparation of wide-gap hydrogenated amorphous silicon carbide thin films by hot-wire chemical vapor deposition at a low tungsten temperature Reviewed
A. Tabata, T. Nakajima, T. Mizutani, Y. Suzuoki
Japanese Journal of Applied Physics Vol. 42 ( 1AB ) page： L10-L12 2003
日射量の多地点同時観測結果に基づくＰＶシステム出力変動のＬＦＣへの影響評価 Reviewed
柳川茂幸, 加藤丈佳, 田畑彰守, 鈴置保雄
電気学会論文誌Ｂ Vol. 123 ( 12 ) page： 1504-1511 2003
Band-gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition
A. Tabata, M. Kuroda, T. Mizutani, Y. Suzuoki
20th International Conference on Amorphous and Microcrystalline Semiconductors page： P-Th-5/5 2003
Effect of total gas pressure on hydrogenated amorphous silicon carbide films by hot-wire CVD
A. Tabata, T. Nakajima, T. Mizutani, Y. Suzuoki
3rd World Conference on Photovoltaic Energy Conversion, 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference 2003
Dependence on gas pressure of μc-Si:H prepared by RF magnetron sputtering
7th International Symposium on Sputtering and Plasma Processes page： 43-46 2003
Structure of amorphous and microcrystalline silicon films prepared at various gas pressure by hot-wire chemical vapor deposition
T. Daimaru, A. Tabata, T. Mizutani, Y. Suzuoki
20th International Conference on Amorphous and Microcrystalline Semiconductors page： P-Tu-1/9 2003
Preparation of microcrystalline silicon by DC-RF coupled magnetron sputtering
K. Fukaya, A. Tabata, T. Mizutani
20th International Conference on Amorphous and Microcrystalline Semiconductors page： P-Tu-1/5 2003
電力需要および日射量の実績からみた太陽光発電システムのｋＷ価値 Reviewed
加藤丈佳, 長江宣久, 田畑彰守, 横水康伸, 岡本達生, 鈴置保雄
電気学会論文誌B Vol. 122-B ( 1 ) page： 77-83 2002
Dependence on substrate temperature of the film structure of μc-Si:H prepared by RF magnetron sputtering Reviewed
J. Kondo, A. Tabata, T. Kawamura, T. Mizutani
Vacuum Vol. 66 page： 409-413 2002
電力需要および日射量の実績からみた太陽光発電システムのｋＷ価値
加藤丈佳, 長江宣久, 田畑彰守, 横水康伸, 岡本達生, 鈴置保雄
電気学会論文誌B Vol. 122-B ( 1-2 ) page： 77-83 2002
Effect of Plasma Off Time on Structure and Electrical Properties of Hydrogenated Amorphous Silicon Carbide Films Reviewed
A. Tabata, M. Sekito, Y. Suzuoki, T. Mizutani
Japanese Journal of Applied Physics Vol. 40 ( 12 ) page： 6728 - 6731 2001
日射量の多地点同時観測に基づく太陽光発電の出力変動に対するLFC容量の評価 Reviewed
柳川茂幸, 加藤丈佳, 呉 カイ, 田畑彰守, 横水康伸, 岡本達生, 鈴置保雄
電気学会論文誌B Vol. 121-B ( 9 ) page： 1094-1102 2001
The changes of structural and electrical properties of hydrogenated amorphous silicon carbide films by pulse-modulated plasma
A. Tabata, M. Sekito, Y. Suzuoki, T. Mizutani
11th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide page： 5.5.11 2000
Effect of the hydrogen partial pressure ratio on the properties of uc-Si:H films prepared by rf magnetron sputtering Reviewed
H. Makihara, A. Tabata, Y. Suzuoki, T. Mizutani
Vacuum Vol. 59 page： 785-791 2000
* Electrical properties before and after light-soaking of hydrogenated amorphous silicon carbide films prepared by the hydrogen radical CVD method Reviewed
A. Tabata, H. Kamijo, Y. Suzuoki, T. Mizutani
J. Physl D: Appl. Phys. Vol. 32 ( 18 ) page： 2448-2453 1999
Fabrication of polyurea thin films for optical socond-harmonic generation by vapor deposition plymerization -Effects of Roling field and monomer structure on reactivity and SHG performance Reviewed
T. Segi, T. Mizutani, Y. Suzuoki, A. Tabata, K. Takagi
IEEE Transaction on Dielectrics and Electrical Insutation Vol. 5 ( 1 ) page： 63-69 1998
Effect of hydrogen radicals on properties and structure of a-Si1-XCx : H films Reviewed
A. Tabata, H. Kamijo, Y. Suzuoki, T. Mizutani
Journal of Non-Crystalline Solids Vol. 227-230 page： 456 1998
Properties of Hydrogeneted Amorphons Silicon Carbide Films prpared by Pulse-Mochulated Rf Discharge
A. Tabata, Yonezu, Y. Suzuoki, T. Mizutani
4th Asian Pasific Conference on Plasma Science and Technology 11th Symposium on Plasma Science for Materials page： 107 1998
Properties of hydrogenated amorphous silicon carbide films prepared by a separately exited plasma CVD method Reviewed
A. Tabata, Y. Kuno, Y. Suzuoki, T. Mizutani
J. Phys. D : Appl. Phys. Vol. 30 ( 2 ) page： 194 1997
Structural Control and Optical Properties of Spiropyran LB Films(II)-Preparation Condition and Nonlinear Optical Properties- Reviewed
K. Muarase, T. Segi, A. Tabata, Y. Suzuoki, T. Mizutani
Trans. IEE of Japan. Vol. 117-A ( 2 ) page： 167-171 1997
Transmission Electron Microscopy Observation and Third-Order Optical Nonlinearity of CdSe-doped Glass Thin Films Prepared by Ion-Beam Sputtering Method Reviewed
A. Tabata. N. Matsuno, Y. Suzuoki, T. Mizutani
Japanese Journal of Applied Physics Vol. 35 ( 5A ) page： 2646-2648 1996
Optical Properties and structure of SiO2 films prepared by ion-beam sputtering Reviewed
A. Tabata, N. Matsuno, Y. Suzuoki, T. Mizutani
Thin Solid Films Vol. 289 page： 84-89 1996
Influence of Poling Field on Polymerization in Polyurea Thin Films for Second-Harmonic Generation Prepared by Vapor Deposition Polymerization Reviewed
T. Segi, Y. Suzuoki, A. Tabata, T. Mizutani, K. Takagi
Japaneas Journal of Applied Physics Vol. 35 ( 8 ) page： 4444-4450 1996
Properties of the CdSe-Doped Glass Thin Films Prepared by Ion-Beam Sputtering Method Reviewed
Y. Suzuoki, N. Matsuno, A. Tabata, T. Mizutani
Japanese Journal of Applied Physics Vol. 34 ( 3 ) page： 1631-1637 1995
Preparation of a-SixC1-X : H films by separately-excited-plasma CVD method Reviewed
A. Tabata, Y. Kuno, Y. Suzuoki, T. Mizutani
Journal of Non-Crystalline Solids Vol. 164-166 page： 1043-1046 1993
Structure and electrical property of hydrogenated amorphous silicon carbide by plasma CVD method Reviewed
A. Tabata, K. Tomiita, Y. Suzuoki, T. Mizutani
J. SOCIETY of Materials Engi. for resources Vol. 4 ( 2 ) page： 35-45 1991
X-ray photoelectron spectroscopy (XPS) of hydrogenated amorphous silicon carbide (a-SiX C1-X : H) prepared by the plasma CVD method Reviewed
A. Tabata, S. Fujii, Y. Suzuoki, T. Mizutani, M. Ieda
J. Phys. D : Appl. Phys. Vol. 23 ( 3 ) page： 316-320 1990
Thermally stimulated current (TSC) in a-Six C1-X : H films prepared by plasma CVD Reviewed
A. Tabata, T. Mizutani, A. Yoshida, M. Ieda
J. Phys. D : Appl. Phys. Vol. 22 ( 6 ) page： 794-797 1989
Recent Developments of Catalytic CVD (Cat-CVD) - A New Radical-Based Processing Technology -
（ Role： Joint author）
2008.10
Frequency Dependence of Conductivity of Hydrogenated Amorphous SiC Films Prepared by PCVD.
A. Tabata, K. Tomiita, Y. Suzuoki, T. Mizutani（ Role： Joint author）
Amorphous and Crystalline Silicon Carbide IV 1992
スパッタリング法によるアモルファスシリコン薄膜の膜特性のタグチメソッドによる最適化の検討
味田晧平、田畑彰守
令和5年電気学会全国大会 2023.3.17
SiC:H薄膜を界面層に用いたヘテロ接合素子の特性
水谷 凌、田畑 彰守
第18回 Cat-CVD研究会 2021.7.10
スパッタリング法によるp型アモルファスシリコン薄膜のヘテロ接合素子への応用
小島弘道、田畑彰守
電気・電子・情報関係学会東海支部連合大会
nc-3C-SiC:H/c-Siヘテロ接合素子に与えるバッファ層納入の影響
亀山航太、田畑彰守
第１６回Cat-CVD研究会
Admittance characteristics of nanocrystalline SiC:H/crystalline Si heterojunction diodes fabricated by hot-wire chemical vapor deposition International conference
A. Tabata, Y. Imori, H. Ozeki
8th International Conference on Hot-Wire CVD (Cat-CVD) process
nc-3C-SiC:H/c-Siヘテロ接合素子特性に与える電極金属の影響
尾関浩幸、田畑彰守
第11回Cat-CVD研究会
Electrical properties of nc-3C-SiC:H/c-Si heterojunction diodes prepared by HW-CVD International conference
Y. Imori, A. Tabata
Effect of film thickness on electrical properties of nc-3C-SiC:H/c-Si heterojunction diodes prepared by HW-CVD International conference
Y. Imori, A. Tabata
c-Si/nc-3C-SiC:H heterojunction diodes with buffer layer International conference
R. Ushikusa, A. Tabata
HW-CVD法によるnc-3C-SiC:H/c-Siヘテロ接合ダイオードの特性に与える水素ガス流量の影響
井森嘉一、田畑彰守
第10回Cat-CVD研究会
Structural and electrical properties of μc-Si:H/nc-3C-SiC:H two-layered thin films prepared by hot-wire CVD methhod International conference
7th International Conference on Hot-Wire Chemical Vapor Deposition
Thickness dependence of structural and electrical properties of HWCVD nc-3C-SiC:H/c-Si heterojunctions International conference
7th International Conference on Hot-Wire Chemical Vapor Deposition
HW-CVD法を用いたμc-Si:H/nc-3C-SiC:H二層膜の膜構造及び電気的特性
渡邉卓也、田畑彰守
第９回Cat-CVD研究会
Heterojunction diodes of N-doped nanocrystalline 3C-SiC:H prepared on p-type c-Si from SiH4/CH4/N2 with varying H2 dilution ratios International conference
S. Sato, A. Tabata
24th International Conference on Amorphous and Nanocrystalline Semiconductors
ナノ結晶3C-SiC:H薄膜を用いたヘテロ接合の素子特性への水素希釈ガスの与える影響
佐藤慎一郎、田畑彰守
第８回Cat-CVD研究会
N2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire-temperature International conference
6th International Conference on Hot-Wire CVD (Cat-CVD) process
Structural changes in tungsten wire and their effect on the properties of hydrogenated nanocrystalline cubic silicon carbide thin films International conference
6th International Conference on Hot-Wire CVD (Cat-CVD) process
HW-CVD（Cat-CVD）法によるナノ結晶3C-SiC:H薄膜の低温形成（依頼講演）
田畑彰守
第7回Cat-CVD研究会
Formation of silicon nitride layer on microcrystalline silicon thin films by hot-wire chemical vapor method using nitrogen and hydrogen gases International conference
17th European Conference on Chemical Vapor Deposition and CVD-XVII
Influences of N2 and H2 gas flow rates on properties of n-type nanocrystalline 3C-SiC:H thin films prepared by hot-wire chemical vapor deposition International conference
17th European Conference on Chemical Vapor Deposition and CVD-XVII
N2ガスを用いたホットワイヤー気相法による微結晶シリコン薄膜への窒化層形成
間崎耕司、田畑彰守、近藤明弘
第6回Cat-CVD研究会
ガラス基板上へのｎ型ナノ結晶3C-SiC薄膜の低温堆積とその高品質化
星出純希、田畑彰守、北川明彦、近藤明弘
第17回SiC及び関連ワイドギャップ半導体研究会
Improvement of electrical properties of n-type nanocrystalline 3C-SiC thin films prepared by hot-wire CVD at high H2-dilution International conference
30th International Symposium on Dry Process
Enhancement of crystal growth in μc-Si:H thin film deposition by H radical-assisted magnetron sputtering and the plasma diagnostics. International conference
AVS 55th International Symposium and Exhibition
Enhancement of crystal growth in μc-Si:H thin film deposition by H radical-assisted magnetron sputtering. International conference
1st International Conference on Microelectronics and Plasma Technology
Properties of hydrogenated microcrystalline silicon thin films prepared by hot-wire CVD at high gas pressure conditions International conference
5th International Conference on Hot-Wire CVD (Cat-CVD) process
N2 decomposition by hot wire and N2 post-deposition treatment on hydrogenated microcrystalline silicon thin films. International conference
5th International Conference on Hot-Wire CVD (Cat-CVD) process
Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N2 as doping gas International conference
5th International Conference on Hot-Wire CVD (Cat-CVD) process
Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2. International conference
5th International Conference on Hot-Wire CVD (Cat-CVD) process
Growth of silicon carbide thin films by hot-wire chemical vapor deposition form SiH4/CH4/H2. International conference
5th International Conference on Hot-Wire CVD (Cat-CVD) process
N2ガスをドーピング原料としたn型ナノ結晶3C-SiC薄膜の開発
星出純希、田畑彰守、北川明彦、近藤明弘
第5回Cat-CVD研究会
ホットワイヤーによるN2ガス分解
間崎耕司、田畑彰守、北川明彦、近藤明弘
第5回Cat-CVD研究会
Enhancement of crystal growth in Si thin film deposition by H radical-assisted magnetron sputtering. International conference
1st International Conference on Plasma-Nanotechnology & Science
Si sputtering deposition by Ar discharge with H radicals and the film evaluation International conference
18th Symposium of MRS
SiH4/CH4/H2を用いたホットワイヤーCVD方によるナノ結晶SiC薄膜の膜構造のH2ガス流量依存性
SiC及び関連ワイドギャップ半導体研究会
Effect of hydrogen radicals on silicon sputtering with argon-hydrogen mixture gas
6th Asian-European International Conference on Plasma SurfaceEngineering AEPSE
Preparation of nanocrystalline silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances International conference
16th European Conference on Chemical Vapor Deposition
フィラメント基板間距離を変えて作製したCat-CVD法によるナノ結晶3C-SiC薄膜の膜特性
第4回Cat-CVD研究会
Properties of nanocrystalline silicon carbide thin films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at various substrate temperatures International conference
2nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
Electrical properties of Microcrystalline silicon thin films prepared by RF magnetron sputtering International conference
20th Symposium on Plasma Science for Materials
化学反応支援マグネトロンスパッタリングによる微結晶シリコン成膜とそのプラズマ診断
深谷康太, 佐々木浩一, 高軍思, 田畑彰守, 豊田浩孝, 岩田聡, 菅井秀郎
第24 回プラズマプロセシング研究会
Influence of gas-pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system International conference
4th International Conference on Hot-Wire CVD (Cat-CVD) process
Structural Change of Hot-Wire CVD Silicon Carbide Thin Films by Gas Flow Rates International conference
4th International Conference on Hot-Wire CVD (Cat-CVD) process
Hydrogenated microcrystalline silicon films by hot wire chemical vapor deposition with very high hydrogen dilution and two-step deposition International conference
4th International Conference on Hot-Wire CVD (Cat-CVD) process
Cat-CVD法によるナノ結晶SiC薄膜作成時のガス圧力の与える影響
香村勇介、田畑彰守、成田知岐、近藤明弘
第3回Cat-CVD研究会
Preparation of B-doped microcrystalline silicon thin films by RF magnetron sputtering International conference
3rd World Conference on Photovoltaic Energy Conversion
Influences of filament temperature on the structure and optical properties of nanocrystalline silicon carbide films by hot-wire CVD. International conference
3rd World Conference on Photovoltaic Energy Conversion
Highly photoconductive hydrogenated amorphous silicon carbide thin films prepared by hot-wire chemical vapor deposition International conference
21st International Conference on Amorphous and Nanocrystalline Semiconductors
Effect of hot-wire passivation on film properties of hydrogenated microcrystalline silicon films International conference
21st International Conference on Amorphous and Nanocrystalline Semiconductors
Nanocrystalline cubic silicon carbide prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at a low substrate temperature International conference
21st International Conference on Amorphous and Nanocrystalline Semiconductors
CH4を炭素源に用いたCat-CVD法によるナノ結晶SiC薄膜の作成
香村勇介、田畑彰守、成田知岐、近藤明弘、水谷照吉
第2回Cat-CVD研究会
Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition
3rd International Conference on Hot-Wire CVD (Cat-CVD) process
Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition International conference
3rd International Conference on Hot-Wire CVD (Cat-CVD) process
メタンを炭素源として用いたHW-CVD法によるワイドバンドギャップ炭化シリコン薄膜の作成
田畑彰守、水谷照吉
第1回Cat-CVD研究会
Preparation of microcrystalline silicon by DC-RF coupled magnetron sputtering
20th International Conference on Amorphous and Microcrystalline Semiconductors
Band-gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition
20th International Conference on Amorphous and Microcrystalline Semiconductors
Structure of amorphous and microcrystalline silicon films prepared at various gas pressure by hot-wire chemical vapor deposition
20th International Conference on Amorphous and Microcrystalline Semiconductors
Dependence on gas pressure of μc-Si:H prepared by RF magnetron sputtering International conference
7th International Symposium on Sputtering and Plasma Processes
Effect of total gas pressure on hydrogenated amorphous silicon carbide films by hot-wire CVD International conference
3rd World Conference on Photovoltaic Energy Conversion, 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference
電力需要および日射量の実績からみた太陽光発電システムのｋＷ価値
加藤丈佳, 長江宣久, 田畑彰守, 横水康伸, 岡本達生, 鈴置保雄
電気学会論文誌B
Structure of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition method International conference
12th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide
Tungsten-Temperature Dependence of the Properties of Hydrogenated Amorphous Silicon Carbide Films Prepared by Hot-Wire CVD Method International conference
19th International Conference on Amorphous and Micro- crystalline Semiconductors
Substrate-temperature-dependence of film structure of μc-Si:H prepared by rf magnetron sputtering International conference
6th International Symposium on Sputtering and Plasma Processes
The changes of structural and electrical properties of hydrogenated amorphous silicon carbide films by pulse-modulated plasma
11th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide
低温プロセスによるナノ結晶炭化シリコンの開発とその電子デバイスへの応用
2006.10 - 2008.3
財団法人立松財団
Grant type：Competitive
ホットワイヤーCVD法によるワイドギャップ炭化シリコンの作製と高品質化に関する研究
2003.10 - 2005.12
財団法人日東学術振興財団
Grant type：Competitive
ラジカル源を併用したＨＷ－ＣＶＤ技術の開発と不純物転化ナノ結晶薄膜作成への応用
2007.4 - 2009.3
科学研究費補助金 基盤研究（Ｃ）（一般），課題番号：19560314
田畑 彰守
Authorship：Principal investigator
エネルギー材料工学特論
2021
機能電気・情報材料セミナー
2020
データ解析処理論
2020
電気工学通論第１
2020
電気電子情報工学実験第1
2019
企業・研究所見学A
2019
機能電気・情報材料セミナー
2019
データ解析処理論
2019
電気工学通論第１
2019
企業・研究所見学B
2019
機能電気・情報材料セミナー
2019
エネルギー材料工学特論
2019
機能電気・情報材料セミナー
2018
機能電気・情報材料セミナー
2018
データ解析処理論
2018
電気工学通論第１
2018
機能電気・情報材料セミナー
2017
エネルギー材料工学特論
2017
機能電気・情報材料セミナー
2017
電気工学通論第１
2017
データ解析処理論
2017
電気工学通論第１
2016
データ解析処理論
2016
エネルギーシステムセミナー
2016
エネルギーシステムセミナー
2016
エネルギーシステムセミナー
2015
電気工学通論第１
2015
電気・電子工学実験第１
2015
データ解析処理論
2015
エネルギーシステムセミナー
2015
エネルギー材料工学特論
2015
電気工学通論第１
2014
エネルギーシステムセミナー
2014
データ解析処理論
2014
エネルギーシステムセミナー
2014
電気・電子工学実験第１
2013
エネルギーシステムセミナー
2013
エネルギー材料工学特論
2013
電気工学通論第１
2013
電気工学通論第１
2012
エネルギーシステムセミナー
2012
Laboratory in Physics
2011
Overview of Advanced Electrical. Electronic and Information Engineering
2011
電気工学通論第１
2011
エネルギーシステムセミナー
2011
Laboratory in Physics
2010
エネルギーシステムセミナー
2010
エネルギー材料工学特論
2010
エネルギー材料工学特論
2009
電気工学通論第1
2009
