Updated on 2020/08/12

写真a

 
TABATA, Akimori
 
Organization
Graduate School of Engineering Electrical Engineering 1 Associate professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Electrical Engineering, Electronics, and Information Engineering
Title
Associate professor
Contact information
メールアドレス

Degree 1

  1. 博士(工学) ( 名古屋大学 ) 

Research Interests 5

  1. magnetron sputtering

  2. hot-wir CVD

  3. silicon nitride

  4. nanocrysatalline silicon carbide

  5. amorphous and microcrystalline silicon

Research Areas 2

  1. Others / Others  / Electronic and Electrical Material Science

  2. Others / Others  / Thin Film and Surface Interface Physical Properties

Current Research Project and SDGs 3

  1. Development of amorphous and nanocrystalline semiconductor thin films and their applications

  2. Development of insulating thin films and their application

  3. Development of thin film growth techniques

Education 2

  1. Nagoya University   Graduate School, Division of Engineering

    - 1990

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    Country: Japan

  2. Nagoya University   Faculty of Science

    - 1985

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    Country: Japan

Professional Memberships 3

  1. 日本物理学会

  2. 電気学会

  3. 応用物理学会

Awards 1

  1. 日本素材物性学会山崎賞

    1992  

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    Country:Japan

 

Papers 59

  1. Temperature dependences of current density-voltage and capacitance-frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes Reviewed

    Akimori, Tabata

    Thin Solid Films   Vol. 619   page: 323 - 327   2016

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  2. Current density-voltage and admittance characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes prepared with varying H2 gas flow rates Reviewed

    A. Tabata, Y. Imori

    Solid-State Electronics   Vol. 104   page: 33-38   2015.2

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  3. Structural changes in tungsten wire and their effect on the properties of hydrogenated nanocrystalline silicon carbide thin films Reviewed

    A. Tabata, A. Naito

    Thin Solid Films   Vol. 519 ( 14 ) page: 4451 – 4454   2011.5

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  4. N2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire-temperature Reviewed

    Y. Omori, A. Tabata, A. Kondo

    Thin Solid Films   Vol. 519 ( 14 ) page: 4535 – 4537   2011.5

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  5. Enhancement of Crystal Growth in Si Thin Film Deposition by H-Radical-Assisted Magnetron Sputtering Reviewed

    K. Fukaya, A. Tabata, K. Sasaki

    Jpn. J. Appl. Phys.   Vol. 49 ( 1 ) page: 015501   2010

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  6. * Film-thickness dependence of structural and electrical properties of boron-doped hydrogenated microcrystalline silicon prepared by radiofrequency magnetron sputtering Reviewed

    A. Tabata, J. Nakano, K. Mazaki, K. Fukaya,

    J. Non-Cryst. Solids   Vol. 356   page: 1131-1134   2010

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  7. * Highly-conductive nitrogen-doped hydrogenated nanocrystalline cubic silicon carbide thin films prepared by hot-wire chemical vapor deposition Reviewed

    A. Tabata, Y. Hoshide, A. Kondo

    Material Science and Engineering B   Vol. 175   page: 201-206   2010

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  8. * Influence of hydrogen addition and gas pressure on silicon nitride layer formation on microcrystalline silicon thin films by a hot-wire chemical vapor method using nitrogen gas Reviewed

    A. Tabata, K. Mazaki, A. Kondo

    Surf. Coat. Technol.   Vol. 204 ( 16-17 ) page: 2559- 2563   2010

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  9. Mechanism of hydrogenated microcrystalline Si film deposition by magnetron sputtering employing a Si target and H2/Ar gas mixture Reviewed

    K. Fukaya, A. Tabata, K. Sasaki

    Jpn. J. Appl. Phys.   Vol. 48 ( 3 ) page: 035507   2009

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  10. Formation of silicon nitride layer on microcrystalline silicon thin films by hot-wire chemical vapor method using nitrogen and hydrogen gases Reviewed

    A. Tabata, K. Mazaki, A. Kondo

    ECS Transaction   Vol. 25 ( 8 ) page: 339-342   2009

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  11. Influences of N2 and H2 gas flow rates on properties of n-type nanocrystalline 3C-SiC:H thin films prepared by hot-wire chemical vapor deposition Reviewed

    A. Tabata, Y. Hoshide, A. Kondo

    ECS Transaction   Vol. 25 ( 8 ) page: 207-212   2009

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  12. N2 decomposition by hot wire and N2 post-deposition treatment on hydrogenated microcrystalline silicon thin films. Reviewed

    K. Mazaki A. Tabata, A. Kitagawa, A. Kondo

    Thin Solids Films   Vol. 517   page: 3452-3455   2009

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  13. Growth of silicon carbide thin films by hot-wire chemical vapor deposition form SiH4/CH4/H2. Reviewed

    A. Tabata, Y. Konura, T. Narita, A. Kondo

    Thin Solids Films   Vol. 517   page: 3516-3519   2009

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  14. Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N2 as doping gas Reviewed

    Y. Hoshide, A. Tabata, A. Kitagawa A. Kondo

    Thin Solids Films   Vol. 517   page: 3524-3527   2009

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  15. Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2 Reviewed

    Y. Hoshide, Y. Komura A. Tabata, A. Kitagawa A. Kondo

    Thin Solids Films   Vol. 517   page: 3520-3523   2009

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  16. Structural Changes of Hot-Wire CVD Silicon Carbide Thin Films Induced by Gas Flow Rates Reviewed

    A. Tabata, M. Mori

    Thin Solid Films   Vol. 516, ( 5 ) page: 626-629   2008.1

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  17. Properties of nanocrystalline silicon carbide thin films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at various substrate temperatures Reviewed

    A. Tabata,Y. Komura, Y. Hoshide, T. Narita, A. Kondo

    Jpn. J. Appl. Phys.   Vol. 47 ( 1 ) page: 561-565   2008.1

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  18. Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system Reviewed

    Y. Komura, A. Tabata, T. Narita, A. Kondo

    Thin Solid Films   Vol. 516 ( 516 ) page: 633-636   2008.1

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  19. Influence of ion bombardment on microcrystalline silicon growth during radio-frequency magnetron sputtering Reviewed

    A. Tabata, K. Fukaya, T. Mizutani

    Vacuum   Vol. 82   page: 777-781   2008

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  20. Film properties of nanocrystalline 3C-SiC thin films deposited on glass substrate by hot-wire chemical vapor deposition using CH4 as a carbon source Reviewed

    Y. Komura A. Tabata T. Narita M. Kanaya A. Kondo T. Mizutani

    Jpn J. Appl. Phys.   Vol. 46 ( 1 ) page: 45-50   2007.1

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  21. Preparation of nanocrystalline silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances Reviewed

    A. Tabata, Y. Komura

    Surf. Coat. Technol.   Vol. 201   page: 8986-8990   2007

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  22. Effect of hot-wire passivation on film properties of hydrogenated microcrystalline silicon films Reviewed

    S. Mitsuhashi, A. Tabata, T. Mizutani

    J. Non-Cryst. Solids   Vol. 352   page: 2943-2946   2006

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  23. Nanocrystalline cubic silicon carbide prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at a low substrate temperature Reviewed

    Y. Komura, A. Tabata, T. Narita, A. Kondo, T. Mizutani

    J. Non-Cryst. Solids   Vol. 352   page: 1367-1370   2006

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  24. Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition Reviewed

    M. Mori, A. Tabata, T. Mizutani

    Thin Solid Film   Vol. 501 ( 1-2 ) page: 177-180   2006

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  25. Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition Reviewed

    T. Daimaru, A. Tabata, T. Mizutani

    Thin Solid Films   Vol. 501 ( 1-2 ) page: 102-106   2006

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  26. Influence of target direct current bias voltage on the film structure of hydrogenated microcrystalline silicon prepared by direct-current- radiofrequency coupled magnetron sputtering Reviewed

    K. Fukaya, A. Tabata, T. Mizutani

    Thin Solid Films   Vol. 478 ( 1-2 ) page: 132-136   2005

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  27. Control of crystallinity and deposition rate of hydrogenated silicon thin films prepared by radio frequency magnetron sputtering using layer-by layer growth Reviewed

    A. Tabata, K. Okada, T. Mizutani, Y. Suzuoki

    Thin Solid Film   Vol. 491 ( 1-2 ) page: 148-152   2005

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  28. Band-gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition Reviewed

    A. Tabata, M. Kuroda, M. Mori, T. Mizutani, Y. Suzuoki

    Journal of Non-Crystalline Solids   Vol. 338-340   page: 521-524   2004

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  29. Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition

    M. Mori, A. Tabata, T. Mizutani

    3rd International Conference on Hot-Wire CVD (Cat-CVD) process     page: 393-395   2004

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  30. Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition

    T. Daimaru, A. Tabata, T. Mizutani

    3rd International Conference on Hot-Wire CVD (Cat-CVD) process     page: 389-392   2004

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  31. Dependence on gas pressure of μc-Si:H prepared by RF magnetron sputtering Reviewed

    K. Fukaya, A. Tabata, T. Mizutani

    Vacuum   Vol. 74 ( 3-4 ) page: 561-565   2004

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  32. 日射量の多地点同時観測結果に基づくPVシステム出力変動のLFCへの影響評価 Reviewed

    柳川茂幸, 加藤丈佳, 田畑彰守, 鈴置保雄

    電気学会論文誌B   Vol. 123 ( 12 ) page: 1504-1511   2003

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

  33. Effect of total gas pressure on hydrogenated amorphous silicon carbide films by hot-wire CVD

    A. Tabata, T. Nakajima, T. Mizutani, Y. Suzuoki

    3rd World Conference on Photovoltaic Energy Conversion, 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference     2003

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  34. Dependence on gas pressure of μc-Si:H prepared by RF magnetron sputtering

    7th International Symposium on Sputtering and Plasma Processes     page: 43-46   2003

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  35. Structure of amorphous and microcrystalline silicon films prepared at various gas pressure by hot-wire chemical vapor deposition

    T. Daimaru, A. Tabata, T. Mizutani, Y. Suzuoki

    20th International Conference on Amorphous and Microcrystalline Semiconductors     page: P-Tu-1/9   2003

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  36. Preparation of microcrystalline silicon by DC-RF coupled magnetron sputtering

    K. Fukaya, A. Tabata, T. Mizutani

    20th International Conference on Amorphous and Microcrystalline Semiconductors     page: P-Tu-1/5   2003

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  37. Band-gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition

    A. Tabata, M. Kuroda, T. Mizutani, Y. Suzuoki

    20th International Conference on Amorphous and Microcrystalline Semiconductors     page: P-Th-5/5   2003

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  38. Preparation of wide-gap hydrogenated amorphous silicon carbide thin films by hot-wire chemical vapor deposition at a low tungsten temperature Reviewed

    A. Tabata, T. Nakajima, T. Mizutani, Y. Suzuoki

    Japanese Journal of Applied Physics   Vol. 42 ( 1AB ) page: L10-L12   2003

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  39. Dependence on substrate temperature of the film structure of μc-Si:H prepared by RF magnetron sputtering Reviewed

    J. Kondo, A. Tabata, T. Kawamura, T. Mizutani

    Vacuum   Vol. 66   page: 409-413   2002

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  40. 電力需要および日射量の実績からみた太陽光発電システムのkW価値

    加藤丈佳, 長江宣久, 田畑彰守, 横水康伸, 岡本達生, 鈴置保雄

    電気学会論文誌B   Vol. 122-B ( 1-2 ) page: 77-83   2002

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  41. 電力需要および日射量の実績からみた太陽光発電システムのkW価値 Reviewed

    加藤丈佳, 長江宣久, 田畑彰守, 横水康伸, 岡本達生, 鈴置保雄

    電気学会論文誌B   Vol. 122-B ( 1 ) page: 77-83   2002

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  42. Effect of Plasma Off Time on Structure and Electrical Properties of Hydrogenated Amorphous Silicon Carbide Films Reviewed

    A. Tabata, M. Sekito, Y. Suzuoki, T. Mizutani

    Japanese Journal of Applied Physics   Vol. 40 ( 12 ) page: 6728 - 6731   2001

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  43. 日射量の多地点同時観測に基づく太陽光発電の出力変動に対するLFC容量の評価 Reviewed

    柳川茂幸, 加藤丈佳, 呉 カイ, 田畑彰守, 横水康伸, 岡本達生, 鈴置保雄

    電気学会論文誌B   Vol. 121-B ( 9 ) page: 1094-1102   2001

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  44. The changes of structural and electrical properties of hydrogenated amorphous silicon carbide films by pulse-modulated plasma

    A. Tabata, M. Sekito, Y. Suzuoki, T. Mizutani

    11th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide     page: 5.5.11   2000

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  45. Effect of the hydrogen partial pressure ratio on the properties of uc-Si:H films prepared by rf magnetron sputtering Reviewed

    H. Makihara, A. Tabata, Y. Suzuoki, T. Mizutani

    Vacuum   Vol. 59   page: 785-791   2000

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  46. * Electrical properties before and after light-soaking of hydrogenated amorphous silicon carbide films prepared by the hydrogen radical CVD method Reviewed

    A. Tabata, H. Kamijo, Y. Suzuoki, T. Mizutani

    J. Physl D: Appl. Phys.   Vol. 32 ( 18 ) page: 2448-2453   1999

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  47. Fabrication of polyurea thin films for optical socond-harmonic generation by vapor deposition plymerization -Effects of Roling field and monomer structure on reactivity and SHG performance Reviewed

    T. Segi, T. Mizutani, Y. Suzuoki, A. Tabata, K. Takagi

    IEEE Transaction on Dielectrics and Electrical Insutation   Vol. 5 ( 1 ) page: 63-69   1998

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  48. Effect of hydrogen radicals on properties and structure of a-Si1-XCx : H films Reviewed

    A. Tabata, H. Kamijo, Y. Suzuoki, T. Mizutani

    Journal of Non-Crystalline Solids   Vol. 227-230   page: 456   1998

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  49. Properties of Hydrogeneted Amorphons Silicon Carbide Films prpared by Pulse-Mochulated Rf Discharge

    A. Tabata, Yonezu, Y. Suzuoki, T. Mizutani

    4th Asian Pasific Conference on Plasma Science and Technology 11th Symposium on Plasma Science for Materials     page: 107   1998

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  50. Properties of hydrogenated amorphous silicon carbide films prepared by a separately exited plasma CVD method Reviewed

    A. Tabata, Y. Kuno, Y. Suzuoki, T. Mizutani

    J. Phys. D : Appl. Phys.   Vol. 30 ( 2 ) page: 194   1997

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  51. Structural Control and Optical Properties of Spiropyran LB Films(II)-Preparation Condition and Nonlinear Optical Properties- Reviewed

    K. Muarase, T. Segi, A. Tabata, Y. Suzuoki, T. Mizutani

    Trans. IEE of Japan.   Vol. 117-A ( 2 ) page: 167-171   1997

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  52. Transmission Electron Microscopy Observation and Third-Order Optical Nonlinearity of CdSe-doped Glass Thin Films Prepared by Ion-Beam Sputtering Method Reviewed

    A. Tabata. N. Matsuno, Y. Suzuoki, T. Mizutani

    Japanese Journal of Applied Physics   Vol. 35 ( 5A ) page: 2646-2648   1996

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  53. Optical Properties and structure of SiO2 films prepared by ion-beam sputtering Reviewed

    A. Tabata, N. Matsuno, Y. Suzuoki, T. Mizutani

    Thin Solid Films   Vol. 289   page: 84-89   1996

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  54. Influence of Poling Field on Polymerization in Polyurea Thin Films for Second-Harmonic Generation Prepared by Vapor Deposition Polymerization Reviewed

    T. Segi, Y. Suzuoki, A. Tabata, T. Mizutani, K. Takagi

    Japaneas Journal of Applied Physics   Vol. 35 ( 8 ) page: 4444-4450   1996

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  55. Properties of the CdSe-Doped Glass Thin Films Prepared by Ion-Beam Sputtering Method Reviewed

    Y. Suzuoki, N. Matsuno, A. Tabata, T. Mizutani

    Japanese Journal of Applied Physics   Vol. 34 ( 3 ) page: 1631-1637   1995

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  56. Preparation of a-SixC1-X : H films by separately-excited-plasma CVD method Reviewed

    A. Tabata, Y. Kuno, Y. Suzuoki, T. Mizutani

    Journal of Non-Crystalline Solids   Vol. 164-166   page: 1043-1046   1993

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  57. Structure and electrical property of hydrogenated amorphous silicon carbide by plasma CVD method Reviewed

    A. Tabata, K. Tomiita, Y. Suzuoki, T. Mizutani

    J. SOCIETY of Materials Engi. for resources   Vol. 4 ( 2 ) page: 35-45   1991

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  58. X-ray photoelectron spectroscopy (XPS) of hydrogenated amorphous silicon carbide (a-SiX C1-X : H) prepared by the plasma CVD method Reviewed

    A. Tabata, S. Fujii, Y. Suzuoki, T. Mizutani, M. Ieda

    J. Phys. D : Appl. Phys.   Vol. 23 ( 3 ) page: 316-320   1990

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  59. Thermally stimulated current (TSC) in a-Six C1-X : H films prepared by plasma CVD Reviewed

    A. Tabata, T. Mizutani, A. Yoshida, M. Ieda

    J. Phys. D : Appl. Phys.   Vol. 22 ( 6 ) page: 794-797   1989

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Books 2

  1. Recent Developments of Catalytic CVD (Cat-CVD) - A New Radical-Based Processing Technology -

    ( Role: Joint author)

    2008.10 

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    Language:Japanese

  2. Frequency Dependence of Conductivity of Hydrogenated Amorphous SiC Films Prepared by PCVD.

    A. Tabata, K. Tomiita, Y. Suzuoki, T. Mizutani( Role: Joint author)

    Amorphous and Crystalline Silicon Carbide IV  1992 

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    Language:English

Presentations 62

  1. スパッタリング法によるp型アモルファスシリコン薄膜のヘテロ接合素子への応用

    小島弘道、田畑彰守

    電気・電子・情報関係学会東海支部連合大会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  2. nc-3C-SiC:H/c-Siヘテロ接合素子に与えるバッファ層納入の影響

    亀山航太、田畑彰守

    第16回Cat-CVD研究会 

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    Event date: 2019.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:兵庫県姫路市   Country:Japan  

  3. Admittance characteristics of nanocrystalline SiC:H/crystalline Si heterojunction diodes fabricated by hot-wire chemical vapor deposition International conference

    A. Tabata, Y. Imori, H. Ozeki

    8th International Conference on Hot-Wire CVD (Cat-CVD) process 

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  4. nc-3C-SiC:H/c-Siヘテロ接合素子特性に与える電極金属の影響

    尾関浩幸、田畑彰守

    第11回Cat-CVD研究会 

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    Event date: 2014.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東北大学   Country:Japan  

  5. Electrical properties of nc-3C-SiC:H/c-Si heterojunction diodes prepared by HW-CVD International conference

    Y. Imori, A. Tabata

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  6. Effect of film thickness on electrical properties of nc-3C-SiC:H/c-Si heterojunction diodes prepared by HW-CVD International conference

    Y. Imori, A. Tabata

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    Event date: 2013.8

    Language:English   Presentation type:Poster presentation  

    Country:Canada  

  7. c-Si/nc-3C-SiC:H heterojunction diodes with buffer layer International conference

    R. Ushikusa, A. Tabata

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    Event date: 2013.8

    Language:English   Presentation type:Poster presentation  

    Country:Canada  

  8. HW-CVD法によるnc-3C-SiC:H/c-Siヘテロ接合ダイオードの特性に与える水素ガス流量の影響

    井森嘉一、田畑彰守

    第10回Cat-CVD研究会 

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    Event date: 2013.7

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  9. Structural and electrical properties of μc-Si:H/nc-3C-SiC:H two-layered thin films prepared by hot-wire CVD methhod International conference

    7th International Conference on Hot-Wire Chemical Vapor Deposition 

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    Event date: 2012.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  10. Thickness dependence of structural and electrical properties of HWCVD nc-3C-SiC:H/c-Si heterojunctions International conference

    7th International Conference on Hot-Wire Chemical Vapor Deposition 

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    Event date: 2012.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  11. HW-CVD法を用いたμc-Si:H/nc-3C-SiC:H二層膜の膜構造及び電気的特性

    渡邉卓也、田畑彰守

    第9回Cat-CVD研究会 

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    Event date: 2012.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:日本大学生産工学部 津田沼校舎   Country:Japan  

  12. Heterojunction diodes of N-doped nanocrystalline 3C-SiC:H prepared on p-type c-Si from SiH4/CH4/N2 with varying H2 dilution ratios International conference

    S. Sato, A. Tabata

    24th International Conference on Amorphous and Nanocrystalline Semiconductors  

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    Event date: 2011.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  13. ナノ結晶3C-SiC:H薄膜を用いたヘテロ接合の素子特性への水素希釈ガスの与える影響

    佐藤慎一郎、田畑彰守

    第8回Cat-CVD研究会 

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    Event date: 2011.6

    Language:Japanese   Presentation type:Poster presentation  

    Venue:石川県   Country:Japan  

  14. Structural changes in tungsten wire and their effect on the properties of hydrogenated nanocrystalline cubic silicon carbide thin films International conference

    6th International Conference on Hot-Wire CVD (Cat-CVD) process 

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    Event date: 2010.9

    Language:English   Presentation type:Poster presentation  

  15. N2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire-temperature International conference

    6th International Conference on Hot-Wire CVD (Cat-CVD) process 

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    Event date: 2010.9

    Language:English   Presentation type:Poster presentation  

  16. HW-CVD(Cat-CVD)法によるナノ結晶3C-SiC:H薄膜の低温形成(依頼講演)

    田畑彰守

    第7回Cat-CVD研究会 

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    Event date: 2010.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  17. Formation of silicon nitride layer on microcrystalline silicon thin films by hot-wire chemical vapor method using nitrogen and hydrogen gases International conference

    17th European Conference on Chemical Vapor Deposition and CVD-XVII 

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    Event date: 2009.10

    Language:English   Presentation type:Poster presentation  

  18. Influences of N2 and H2 gas flow rates on properties of n-type nanocrystalline 3C-SiC:H thin films prepared by hot-wire chemical vapor deposition International conference

    17th European Conference on Chemical Vapor Deposition and CVD-XVII 

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    Event date: 2009.10

    Language:English   Presentation type:Poster presentation  

  19. N2ガスを用いたホットワイヤー気相法による微結晶シリコン薄膜への窒化層形成

    間崎耕司、田畑彰守、近藤明弘

    第6回Cat-CVD研究会 

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    Event date: 2009.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  20. ガラス基板上へのn型ナノ結晶3C-SiC薄膜の低温堆積とその高品質化

    星出純希、田畑彰守、北川明彦、近藤明弘

    第17回SiC及び関連ワイドギャップ半導体研究会 

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    Event date: 2008.12

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  21. Improvement of electrical properties of n-type nanocrystalline 3C-SiC thin films prepared by hot-wire CVD at high H2-dilution International conference

    30th International Symposium on Dry Process 

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    Event date: 2008.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  22. Enhancement of crystal growth in μc-Si:H thin film deposition by H radical-assisted magnetron sputtering and the plasma diagnostics. International conference

    AVS 55th International Symposium and Exhibition 

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    Event date: 2008.10

    Language:English   Presentation type:Oral presentation (general)  

  23. Enhancement of crystal growth in μc-Si:H thin film deposition by H radical-assisted magnetron sputtering. International conference

    1st International Conference on Microelectronics and Plasma Technology 

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    Event date: 2008.8

    Language:English   Presentation type:Poster presentation  

  24. Properties of hydrogenated microcrystalline silicon thin films prepared by hot-wire CVD at high gas pressure conditions International conference

    5th International Conference on Hot-Wire CVD (Cat-CVD) process 

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    Event date: 2008.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  25. N2 decomposition by hot wire and N2 post-deposition treatment on hydrogenated microcrystalline silicon thin films. International conference

    5th International Conference on Hot-Wire CVD (Cat-CVD) process 

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    Event date: 2008.8

    Language:English   Presentation type:Poster presentation  

  26. Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N2 as doping gas International conference

    5th International Conference on Hot-Wire CVD (Cat-CVD) process 

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    Event date: 2008.8

    Language:English   Presentation type:Poster presentation  

  27. Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2. International conference

    5th International Conference on Hot-Wire CVD (Cat-CVD) process 

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    Event date: 2008.8

    Language:English   Presentation type:Poster presentation  

  28. Growth of silicon carbide thin films by hot-wire chemical vapor deposition form SiH4/CH4/H2. International conference

    5th International Conference on Hot-Wire CVD (Cat-CVD) process 

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    Event date: 2008.8

    Language:English   Presentation type:Poster presentation  

  29. N2ガスをドーピング原料としたn型ナノ結晶3C-SiC薄膜の開発

    星出純希、田畑彰守、北川明彦、近藤明弘

    第5回Cat-CVD研究会 

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    Event date: 2008.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  30. ホットワイヤーによるN2ガス分解

    間崎耕司、田畑彰守、北川明彦、近藤明弘

    第5回Cat-CVD研究会 

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    Event date: 2008.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  31. Enhancement of crystal growth in Si thin film deposition by H radical-assisted magnetron sputtering. International conference

    1st International Conference on Plasma-Nanotechnology & Science 

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    Event date: 2008.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  32. Si sputtering deposition by Ar discharge with H radicals and the film evaluation International conference

    18th Symposium of MRS 

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    Event date: 2007.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  33. SiH4/CH4/H2を用いたホットワイヤーCVD方によるナノ結晶SiC薄膜の膜構造のH2ガス流量依存性

    SiC及び関連ワイドギャップ半導体研究会 

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    Event date: 2007.11

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  34. Effect of hydrogen radicals on silicon sputtering with argon-hydrogen mixture gas

    6th Asian-European International Conference on Plasma SurfaceEngineering AEPSE 

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    Event date: 2007.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  35. Preparation of nanocrystalline silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances International conference

    16th European Conference on Chemical Vapor Deposition 

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    Event date: 2007.9

    Language:English   Presentation type:Poster presentation  

  36. フィラメント基板間距離を変えて作製したCat-CVD法によるナノ結晶3C-SiC薄膜の膜特性

    第4回Cat-CVD研究会 

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    Event date: 2007.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  37. Electrical properties of Microcrystalline silicon thin films prepared by RF magnetron sputtering International conference

    20th Symposium on Plasma Science for Materials 

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    Event date: 2007.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  38. Properties of nanocrystalline silicon carbide thin films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at various substrate temperatures International conference

    2nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies 

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    Event date: 2007.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  39. 化学反応支援マグネトロンスパッタリングによる微結晶シリコン成膜とそのプラズマ診断

    深谷康太, 佐々木浩一, 高軍思, 田畑彰守, 豊田浩孝, 岩田聡, 菅井秀郎

    第24 回プラズマプロセシング研究会 

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    Event date: 2007.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  40. Influence of gas-pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system International conference

    4th International Conference on Hot-Wire CVD (Cat-CVD) process 

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    Event date: 2006.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  41. Structural Change of Hot-Wire CVD Silicon Carbide Thin Films by Gas Flow Rates International conference

    4th International Conference on Hot-Wire CVD (Cat-CVD) process 

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    Event date: 2006.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  42. Hydrogenated microcrystalline silicon films by hot wire chemical vapor deposition with very high hydrogen dilution and two-step deposition International conference

    4th International Conference on Hot-Wire CVD (Cat-CVD) process 

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    Event date: 2006.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  43. Cat-CVD法によるナノ結晶SiC薄膜作成時のガス圧力の与える影響

    香村勇介、田畑彰守、成田知岐、近藤明弘

    第3回Cat-CVD研究会 

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    Event date: 2006.6

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  44. Preparation of B-doped microcrystalline silicon thin films by RF magnetron sputtering International conference

    3rd World Conference on Photovoltaic Energy Conversion 

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    Event date: 2006.5

    Language:English   Presentation type:Poster presentation  

  45. Influences of filament temperature on the structure and optical properties of nanocrystalline silicon carbide films by hot-wire CVD. International conference

    3rd World Conference on Photovoltaic Energy Conversion 

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    Event date: 2006.5

    Language:English   Presentation type:Poster presentation  

  46. Highly photoconductive hydrogenated amorphous silicon carbide thin films prepared by hot-wire chemical vapor deposition International conference

    21st International Conference on Amorphous and Nanocrystalline Semiconductors 

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    Event date: 2005.9

    Language:English   Presentation type:Poster presentation  

  47. Effect of hot-wire passivation on film properties of hydrogenated microcrystalline silicon films International conference

    21st International Conference on Amorphous and Nanocrystalline Semiconductors 

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    Event date: 2005.9

    Language:English   Presentation type:Poster presentation  

  48. Nanocrystalline cubic silicon carbide prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at a low substrate temperature International conference

    21st International Conference on Amorphous and Nanocrystalline Semiconductors 

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    Event date: 2005.9

    Language:English   Presentation type:Poster presentation  

  49. CH4を炭素源に用いたCat-CVD法によるナノ結晶SiC薄膜の作成

    香村勇介、田畑彰守、成田知岐、近藤明弘、水谷照吉

    第2回Cat-CVD研究会 

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    Event date: 2005.6

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  50. Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition

    3rd International Conference on Hot-Wire CVD (Cat-CVD) process 

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    Event date: 2004.8

    Language:English   Presentation type:Poster presentation  

  51. Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition International conference

    3rd International Conference on Hot-Wire CVD (Cat-CVD) process 

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    Event date: 2004.8

    Language:English   Presentation type:Poster presentation  

  52. メタンを炭素源として用いたHW-CVD法によるワイドバンドギャップ炭化シリコン薄膜の作成

    田畑彰守、水谷照吉

    第1回Cat-CVD研究会 

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    Event date: 2004.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  53. Preparation of microcrystalline silicon by DC-RF coupled magnetron sputtering

    20th International Conference on Amorphous and Microcrystalline Semiconductors 

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    Event date: 2003.8

    Language:English   Presentation type:Oral presentation (general)  

  54. Band-gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition

    20th International Conference on Amorphous and Microcrystalline Semiconductors 

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    Event date: 2003.8

    Language:English   Presentation type:Oral presentation (general)  

  55. Structure of amorphous and microcrystalline silicon films prepared at various gas pressure by hot-wire chemical vapor deposition

    20th International Conference on Amorphous and Microcrystalline Semiconductors 

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    Event date: 2003.8

    Language:English   Presentation type:Oral presentation (general)  

  56. Dependence on gas pressure of μc-Si:H prepared by RF magnetron sputtering International conference

    7th International Symposium on Sputtering and Plasma Processes 

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    Event date: 2003.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  57. Effect of total gas pressure on hydrogenated amorphous silicon carbide films by hot-wire CVD International conference

    3rd World Conference on Photovoltaic Energy Conversion, 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference 

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    Event date: 2003.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  58. 電力需要および日射量の実績からみた太陽光発電システムのkW価値

    加藤丈佳, 長江宣久, 田畑彰守, 横水康伸, 岡本達生, 鈴置保雄

    電気学会論文誌B 

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    Event date: 2002

    Language:Japanese   Presentation type:Oral presentation (general)  

  59. Structure of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition method International conference

    12th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide 

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    Event date: 2001.9

    Language:English   Presentation type:Poster presentation  

  60. Tungsten-Temperature Dependence of the Properties of Hydrogenated Amorphous Silicon Carbide Films Prepared by Hot-Wire CVD Method International conference

    19th International Conference on Amorphous and Micro- crystalline Semiconductors 

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    Event date: 2001.8

    Language:English   Presentation type:Poster presentation  

  61. Substrate-temperature-dependence of film structure of μc-Si:H prepared by rf magnetron sputtering International conference

    6th International Symposium on Sputtering and Plasma Processes 

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    Event date: 2001.6

    Language:English   Presentation type:Oral presentation (general)  

  62. The changes of structural and electrical properties of hydrogenated amorphous silicon carbide films by pulse-modulated plasma

    11th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide 

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    Event date: 2000.9

    Language:English   Presentation type:Oral presentation (general)  

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Research Project for Joint Research, Competitive Funding, etc. 2

  1. 低温プロセスによるナノ結晶炭化シリコンの開発とその電子デバイスへの応用

    2006.10 - 2008.3

    財団法人立松財団 

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    Grant type:Competitive

  2. ホットワイヤーCVD法によるワイドギャップ炭化シリコンの作製と高品質化に関する研究

    2003.10 - 2005.12

    財団法人日東学術振興財団 

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    Grant type:Competitive

KAKENHI (Grants-in-Aid for Scientific Research) 1

  1. ラジカル源を併用したHW-CVD技術の開発と不純物転化ナノ結晶薄膜作成への応用

    2007.4 - 2009.3

    科学研究費補助金  基盤研究(C)(一般),課題番号:19560314

    田畑 彰守

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    Authorship:Principal investigator 

 

Teaching Experience (On-campus) 49

  1. 電気工学通論第1

    2020

  2. データ解析処理論

    2020

  3. 機能電気・情報材料セミナー

    2020

  4. エネルギー材料工学特論

    2019

     詳細を見る

    太陽電池および太陽電池用材料についての講義

  5. 機能電気・情報材料セミナー

    2019

  6. 企業・研究所見学B

    2019

  7. 電気電子情報工学実験第1

    2019

  8. 企業・研究所見学A

    2019

  9. 機能電気・情報材料セミナー

    2019

  10. データ解析処理論

    2019

  11. 電気工学通論第1

    2019

  12. 機能電気・情報材料セミナー

    2018

  13. 機能電気・情報材料セミナー

    2018

  14. データ解析処理論

    2018

  15. 電気工学通論第1

    2018

  16. 機能電気・情報材料セミナー

    2017

  17. エネルギー材料工学特論

    2017

     詳細を見る

    太陽電池および太陽電池用材料についての講義

  18. 機能電気・情報材料セミナー

    2017

  19. 電気工学通論第1

    2017

  20. データ解析処理論

    2017

  21. 電気工学通論第1

    2016

  22. データ解析処理論

    2016

  23. エネルギーシステムセミナー

    2016

  24. エネルギーシステムセミナー

    2016

  25. 電気・電子工学実験第1

    2015

  26. 電気工学通論第1

    2015

  27. エネルギーシステムセミナー

    2015

  28. データ解析処理論

    2015

  29. エネルギーシステムセミナー

    2015

  30. エネルギー材料工学特論

    2015

     詳細を見る

    太陽電池および太陽電池用材料についての講義

  31. 電気工学通論第1

    2014

  32. エネルギーシステムセミナー

    2014

  33. データ解析処理論

    2014

  34. エネルギーシステムセミナー

    2014

  35. 電気・電子工学実験第1

    2013

  36. エネルギーシステムセミナー

    2013

  37. エネルギー材料工学特論

    2013

     詳細を見る

    太陽電池および太陽電池用材料についての講義

  38. 電気工学通論第1

    2013

  39. 電気工学通論第1

    2012

  40. エネルギーシステムセミナー

    2012

  41. Laboratory in Physics

    2011

  42. Overview of Advanced Electrical. Electronic and Information Engineering

    2011

  43. 電気工学通論第1

    2011

  44. エネルギーシステムセミナー

    2011

  45. エネルギー材料工学特論

    2010

     詳細を見る

    太陽電池および太陽電池用材料についての講義

  46. エネルギーシステムセミナー

    2010

  47. Laboratory in Physics

    2010

  48. エネルギー材料工学特論

    2009

     詳細を見る

    太陽電池および太陽電池用材料についての講義

  49. 電気工学通論第1

    2009

     詳細を見る

    物理工学科の学生を対象に、基礎的な電気回路ついての講義及び演習

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