2021/04/18 更新

写真a

アマノ ヒロシ
天野 浩
AMANO, Hiroshi
所属
未来材料・システム研究所 附属未来エレクトロニクス集積研究センター 未来デバイス部 教授
大学院工学研究科 共通/大学院工学研究科) 赤﨑記念研究センター センター長
未来材料・システム研究所 附属未来エレクトロニクス集積研究センター 未来デバイス部 未来エレクトロニクス集積研究センター長
職名
教授
連絡先
メールアドレス

学位 1

  1. 工学博士 ( 1989年1月   名古屋大学 ) 

研究キーワード 8

  1. 発光ダイオード, レーザダイオード, トランジスタ, 太陽電池, 化合物半導体結晶成長, 半導体デバイス物理, ナノ構造

  2. 発光ダイオード

  3. 太陽電池

  4. 半導体デバイス物理

  5. 化合物半導体結晶成長

  6. レーザダイオード

  7. ナノ構造

  8. トランジスタ

研究分野 1

  1. その他 / その他  / 電子・電気材料工学

現在の研究課題とSDGs 1

  1. Ⅲ族窒化物半導体の結晶成長とデバイス応用

経歴 19

  1. 名古屋大学未来材料・システム研究所   未来エレクトロニクス集積研究センター   未来エレクトロニクス集積研究センターセンター長

    2015年10月 - 現在

      詳細を見る

    国名:日本国

  2. 名古屋大学   未来材料・システム研究所 附属未来エレクトロニクス集積研究センター 未来デバイス部   未来エレクトロニクス集積研究センター長

    2015年10月 - 現在

  3. 名古屋大学未来材料・システム研究所   未来エレクトロニクス集積研究センター   未来エレクトロニクス集積研究センターセンター長

    2015年10月 - 現在

  4. 名古屋大学   未来材料・システム研究所 附属未来エレクトロニクス集積研究センター 未来デバイス部   副総長

    2015年10月 - 現在

  5. 名古屋大学   未来材料・システム研究所 附属未来エレクトロニクス集積研究センター 未来デバイス部   教授

    2015年10月 - 現在

  6. 名城大学特別栄誉教授

    2015年7月 - 現在

      詳細を見る

    国名:日本国

  7. 名城大学

    2015年7月 - 現在

  8. 名古屋市立大学 客員教授

    2015年4月 - 2016年3月

      詳細を見る

    国名:日本国

  9. 名古屋大学特別教授

    2015年3月 - 現在

      詳細を見る

    国名:日本国

  10. 名古屋大学

    2015年3月 - 現在

  11. 中国清華大学   名誉教授

    2014年11月 - 現在

      詳細を見る

    国名:中華人民共和国

  12. 中国清華大学   名誉教授

    2014年11月 - 現在

  13. 名古屋大学   大学院工学研究科 共通/大学院工学研究科)   赤﨑記念研究センター センター長

    2011年4月 - 現在

  14. 名古屋大学   大学院工学研究科 共通/大学院工学研究科)   赤﨑記念研究センター センター長

    2011年4月 - 現在

  15. 名古屋大学   工学研究科電子情報システム専攻   教授

    2010年4月 - 2015年10月

      詳細を見る

    国名:日本国

  16. 名城大学理工学部教授

    2002年4月 - 2010年3月

      詳細を見る

    国名:日本国

  17. 名城大学理工学部助教授

    1998年4月 - 2002年3月

      詳細を見る

    国名:日本国

  18. 名城大学理工学部講師

    1992年4月 - 1998年3月

      詳細を見る

    国名:日本国

  19. 名古屋大学助手(工学部)

    1988年4月 - 1992年3月

      詳細を見る

    国名:日本国

▼全件表示

学歴 3

  1. 名古屋大学   工学研究科   電気工学・電気工学第二及び電子工学専攻

    1985年4月 - 1988年3月

      詳細を見る

    国名: 日本国

  2. 名古屋大学   工学研究科   電気工学・電気工学第二及び電子工学専攻

    1983年4月 - 1985年3月

      詳細を見る

    国名: 日本国

  3. 名古屋大学   工学部   電子工学科

    1979年4月 - 1983年3月

      詳細を見る

    国名: 日本国

所属学協会 28

  1. 照明学会   名誉会員

    2016年9月 - 現在

  2. American Physical Society   フェロー

    2015年9月 - 現在

  3. 日本工学アカデミー   会員

    2015年6月 - 現在

  4. 日本化学会   名誉会員

    2015年6月 - 現在

  5. NAE(United States National Academy of Engineering)

    2015年6月 - 現在

  6. 電気学会   名誉員

    2015年5月 - 現在

  7. 日本表面科学会   特別栄誉会員

    2015年5月 - 現在

  8. 日本物理学会   名誉会員

    2015年4月 - 現在

  9. 電子情報通信学会    名誉員

    2015年3月 - 現在

  10. Material Research Society   Regular Member

    2010年1月 - 現在

  11. Optical Society of America

  12. SPIE

  13. 応用物理学会   Fellow、名誉会員

  14. Institute of Physics   Fellow

  15. 日本工学アカデミー

  16. 日本化学会

  17. 応用物理学会

  18. SPIE

  19. Optical Society of America

  20. NAE(United States National Academy of Engineering)

  21. Material Research Society

  22. Institute of Physics

  23. American Physical Society

  24. 日本物理学会

  25. 電気学会

  26. 電子情報通信学会

  27. 照明学会

  28. 日本表面科学会

▼全件表示

委員歴 48

  1. IWUMD-2017   組織委員長  

    2016年10月 - 2017年12月   

  2. IWUMD-2017   組織委員長  

    2016年10月 - 2017年12月   

  3. International Solid State Lighting Alliance   国際諮問委員  

    2016年8月 - 2019年8月   

      詳細を見る

    団体区分:学協会

  4. International Solid State Lighting Alliance   国際諮問委員  

    2016年8月 - 2019年8月   

      詳細を見る

    団体区分:学協会

  5. OPIC2017   組織委員  

    2016年8月 - 2017年6月   

      詳細を見る

    団体区分:学協会

  6. OPIC2017   組織委員  

    2016年8月 - 2017年6月   

      詳細を見る

    団体区分:学協会

  7. 国立研究会開発法人産業術総合研究所   柱冠フェロー  

    2016年8月 - 2017年3月   

      詳細を見る

    団体区分:政府

  8. 国立研究会開発法人産業術総合研究所   柱冠フェロー  

    2016年8月 - 2017年3月   

      詳細を見る

    団体区分:政府

  9. 国際物理オリンピック日本大会   組織委員  

    2016年5月 - 2021年4月   

      詳細を見る

    団体区分:その他

  10. 国際物理オリンピック日本大会   組織委員  

    2016年5月 - 2021年4月   

      詳細を見る

    団体区分:その他

  11. 日本結晶成長学会   評議員  

    2016年4月 - 2019年3月   

      詳細を見る

    団体区分:学協会

  12. 日本結晶成長学会   評議員  

    2016年4月 - 2019年3月   

      詳細を見る

    団体区分:学協会

  13. 33rd International Conference on the Physics of Semiconductors国際諮問委員会   委員長  

    2015年9月 - 2016年8月   

  14. ・結晶成長の科学と技術第161委員会   委員  

    2015年8月 - 2016年3月   

  15. 2015 Rusnanoprize Award Committee   Member  

    2015年7月 - 現在   

  16. 2015 Rusnanoprize Award Committee   Member  

    2015年7月 - 現在   

  17. 2015 Rusnanoprize Award Committee   Member  

    2015年7月 - 現在   

  18. Optics & Photonics International Congress 2016組織委員会   委員  

    2015年7月 - 2016年6月   

  19. 江崎玲於奈賞委員会   委員長  

    2015年6月 - 2017年3月   

  20. 江崎玲於奈賞委員会   委員長  

    2015年6月 - 2017年3月   

  21. 大阪大学光科学センター   特別顧問  

    2015年5月 - 2017年9月   

  22. 大阪大学光科学センター   特別顧問  

    2015年5月 - 2017年9月   

  23. ISPlasma2016/IC-PLANT2016組織委員会   委員長  

    2015年5月 - 2016年4月   

  24. 日本フォトニクス協議会 JPC関西,   特別顧問  

    2015年4月 - 2017年3月   

  25. 日本フォトニクス協議会 JPC関西,   特別顧問  

    2015年4月 - 2017年3月   

  26. 編集委員会委員  

    2014年7月 - 2016年3月   

  27. 組織委員会委員     

    2014年7月 - 2015年3月   

  28. ISCS2014   Regional program chair  

    2013年4月 - 現在   

  29. 化合物半導体国際シンポジウム   Regional program chair  

    2013年4月 - 現在   

  30. ISCS2014   Regional program chair  

    2013年4月 - 現在   

  31. Program Committee Chair  

    2013年4月 - 2014年3月   

  32. OPIC2013   組織委員  

    2012年7月 - 現在   

  33. OPIC2013   組織委員  

    2012年7月 - 現在   

  34. レーザ学会   専門委員会  

    2012年5月 - 2015年3月   

  35. LEDIA   Conference Chair  

    2012年4月 - 現在   

  36. 産業用LED応用研究会   委員長  

    2012年4月 - 現在   

  37. LEDIA   Conference Chair  

    2012年4月 - 現在   

  38. 産業用LED応用研究会   委員長  

    2012年4月 - 現在   

  39. LEDIA   Conference Chair  

    2012年4月 - 現在   

  40. プログラム委員会副委員長  

    2012年2月 - 2012年4月   

  41. 4th International Symposium on Growth of III-Nitrides   Program Committee Chair  

    2011年7月 - 2012年7月   

  42. ICMOVPE-XVI   International Advisory COmmittee  

    2011年6月 - 2012年5月   

  43. 実行委員長  

    2011年4月 - 2012年10月   

  44. 名古屋市科学館企画調査委員会   企画調査委員  

    2010年8月 - 現在   

  45. 名古屋市科学館企画調査委員会   企画調査委員  

    2010年8月 - 現在   

  46. 電子部品・材料研究専門委員会   専門委員  

    2010年5月 - 2012年5月   

  47. ワイドギャップ半導体光・電子デバイス第162委員会   特別顧問  

    2010年4月 - 2017年3月   

  48. ワイドギャップ半導体光・電子デバイス第162委員会   特別顧問  

    2010年4月 - 2017年3月   

▼全件表示

受賞 37

  1. リンショッピング大学名誉博士号

    2017年5月  

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    受賞国:スウェーデン王国

  2. バジェ大学名誉博士号

    2017年1月   バジェ大学   青色LEDの開発

    天野 浩

     詳細を見る

    受賞国:グアテマラ共和国

  3. オーベルニュ大学、ブレーズ・パスカル大学名誉博士号

    2016年5月   オーベルニュ大学、ブレーズ・パスカル大学  

    天野 浩

     詳細を見る

    受賞国:フランス共和国

  4. パドバ大学名誉博士号

    2016年4月   パドバ大学  

    天野 浩

     詳細を見る

    受賞国:イタリア共和国

  5. 応用物理学会化合物半導体エレクトロニクス業績賞(赤﨑勇賞)

    2016年3月   応用物理学会   青色及び紫外光デバイスの開発

    天野 浩

     詳細を見る

    受賞区分:国内学会・会議・シンポジウム等の賞  受賞国:日本国

  6. モンゴル国立大学名誉博士号

    2016年3月   モンゴル国立大学  

    天野 浩

     詳細を見る

    受賞国:モンゴル国

  7. 丸八会顕彰

    2015年10月   丸八会  

     詳細を見る

    受賞国:日本国

  8. 2015 Asia Game Changers

    2015年10月   Asia Society  

     詳細を見る

    受賞区分:国内外の国際的学術賞  受賞国:アメリカ合衆国

  9. 第10回業績賞及び赤﨑勇賞

    2015年10月   日本結晶成長学会   高品質窒化物半導体の創出と青色・紫外光素子の実現

    天野 浩

     詳細を見る

    受賞区分:国内学会・会議・シンポジウム等の賞  受賞国:日本国

  10. 愛知県名誉県民

    2015年9月   愛知県  

     詳細を見る

    受賞国:日本国

  11. 産学官連携功労者表彰 日本学術会議会長賞,

    2015年8月   日本学術会議会長   「短波長紫外LED」の開発

    天野 浩

     詳細を見る

    受賞国:日本国

  12. 浜松市名誉市民

    2015年7月   浜松市  

     詳細を見る

    受賞国:日本国

  13. 中日文化賞

    2015年5月   中日新聞  

     詳細を見る

    受賞国:日本国

  14. 科学技術分野の文部科学大臣表彰 科学技術賞研究部門

    2015年4月   文部科学大臣   

     詳細を見る

    受賞国:日本国

  15. 電子情報通信学会 特別功績賞

    2015年3月   電子情報通信学会  

     詳細を見る

    受賞国:日本国

  16. 日本スウェーデン協会 名誉会員

    2015年3月   日本スウェーデン協会  

     詳細を見る

    受賞国:日本国

  17. 名古屋市学術表彰

    2015年1月   名古屋市  

     詳細を見る

    受賞国:日本国

  18. 愛知県学術顕彰

    2015年1月   愛知県  

     詳細を見る

    受賞国:日本国

  19. 静岡県民栄誉賞

    2015年1月   静岡県  

     詳細を見る

    受賞国:日本国

  20. ノーベル物理学賞

    2014年12月   ノーベル財団  

     詳細を見る

    受賞国:スウェーデン王国

  21. 文化功労者顕彰

    2014年11月   文部科学大臣  

     詳細を見る

    受賞国:日本国

  22. 文化勲章

    2014年11月   首相  

     詳細を見る

    受賞国:日本国

  23. APEX/JJAP編集貢献賞

    2014年3月   応用物理学会  

     詳細を見る

    受賞国:日本国

  24. IOP Fellow

    2011年10月   Institute of Physics  

     詳細を見る

    受賞国:グレートブリテン・北アイルランド連合王国(英国)

  25. 英国物理学会 フェロー

    2011年10月  

    天野 浩

     詳細を見る

    受賞国:グレートブリテン・北アイルランド連合王国(英国)

  26. ナイスステップな研究者2009

    2009年12月   文部科学省 科学技術政策研究所  

     詳細を見る

    受賞国:日本国

  27. ナイスステップな研究者2009

    2009年12月   科学技術・政策研究所   青色及び紫外光デバイスの開発

    天野 浩

     詳細を見る

    受賞国:日本国

  28. 応用物理学会フェロー

    2009年9月   応用物理学会  

     詳細を見る

    受賞国:日本国

  29. 日本結晶成長学会論文賞

    2008年11月   日本結晶成長学会  

     詳細を見る

    受賞国:日本国

  30. 第1回 P&I パテント・オブ・ザ・イヤー

    2004年11月   東京工業大学精密工学研究所  

     詳細を見る

    受賞国:日本国

  31. SSDM論文賞

    2003年9月   SSDM  

     詳細を見る

    受賞国:日本国

  32. 武田賞

    2002年11月   竹田財団  

     詳細を見る

    受賞国:日本国

  33. 丸文学術賞

    2001年3月   丸文財団  

     詳細を見る

    受賞国:日本国

  34. 英国Rank賞

    1998年12月   Rank Foundation  

  35. 応用物理学会賞C(会誌賞)

    1998年9月   応用物理学会  

     詳細を見る

    受賞国:日本国

  36. 米国IEEE/LEOS エンジニアリングアチーブメント賞

    1996年11月  

  37. オプトエレクトロニクス会議特別賞

    1994年7月  

▼全件表示

 

論文 712

  1. Stable electrical performance of AlGaInP-based red micro-light emitting diode by controlling interfacial morphologies of metal contacts

    Lee D.H.

    Journal of Alloys and Compounds   872 巻   2021年8月

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Alloys and Compounds  

    DOI: 10.1016/j.jallcom.2021.159629

    Scopus

  2. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

    Kumabe Takeru, Ando Yuto, Watanabe Hirotaka, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   60 巻 ( SB )   2021年5月

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.35848/1347-4065/abd538

    Web of Science

    Scopus

  3. Experimental demonstration of GaN IMPATT diode at X-band

    Kawasaki Seiya, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Arai Manabu, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   14 巻 ( 4 )   2021年4月

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    DOI: 10.35848/1882-0786/abe3dc

    Web of Science

    Scopus

  4. Numerical simulation of ammonothermal crystal growth of GaN-current state, challenges, and prospects

    Schimmel S.

    Crystals   11 巻 ( 4 )   2021年4月

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:Crystals  

    DOI: 10.3390/cryst11040356

    Scopus

  5. Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography.

    Avit G, Robin Y, Liao Y, Nan H, Pristovsek M, Amano H

    Scientific reports   11 巻 ( 1 ) 頁: 6754   2021年3月

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:Scientific Reports  

    DOI: 10.1038/s41598-021-86139-9

    Scopus

    PubMed

  6. Micro-Light Emitting Diode: From Chips to Applications

    Parbrook Peter J., Corbett Brian, Han Jung, Seong Tae-Yeon, Amano Hiroshi

    LASER & PHOTONICS REVIEWS     2021年3月

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:Laser and Photonics Reviews  

    DOI: 10.1002/lpor.202000133

    Web of Science

    Scopus

  7. Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

    Kangawa Yoshihiro, Kusaba Akira, Kempisty Pawel, Shiraishi Kenji, Nitta Shugo, Amano Hiroshi

    CRYSTAL GROWTH & DESIGN   21 巻 ( 3 ) 頁: 1878 - 1890   2021年3月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Crystal Growth and Design  

    DOI: 10.1021/acs.cgd.0c01564

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  8. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

    Yamada Takehiro, Ando Yuto, Watanabe Hirotaka, Furusawa Yuta, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Suda Jun, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   14 巻 ( 3 )   2021年3月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    DOI: 10.35848/1882-0786/abe657

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  9. Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth-A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution

    Schimmel Saskia, Tomida Daisuke, Saito Makoto, Bao Quanxi, Ishiguro Toru, Honda Yoshio, Chichibu Shigefusa, Amano Hiroshi

    CRYSTALS   11 巻 ( 3 ) 頁: 1 - 27   2021年3月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Crystals  

    DOI: 10.3390/cryst11030254

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  10. Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication

    Yasuda Hidehiro, Nishitani Tomohiro, Ichikawa Shuhei, Hatanaka Shuhei, Honda Yoshio, Amano Hiroshi

    QUANTUM BEAM SCIENCE   5 巻 ( 1 )   2021年3月

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.3390/qubs5010005

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  11. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

    Liu T., Watanabe H., Nitta S., Wang J., Yu G., Ando Y., Honda Y., Amano H., Tanaka A., Koide Y.

    APPLIED PHYSICS LETTERS   118 巻 ( 7 )   2021年2月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Letters  

    DOI: 10.1063/5.0034584

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  12. Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)

    Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

    OPTICAL MATERIALS EXPRESS   11 巻 ( 2 ) 頁: 524 - 524   2021年2月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Optical Materials Express  

    DOI: 10.1364/OME.420328

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  13. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   117 巻 ( 24 )   2020年12月

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/5.0028516

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  14. The 2020 UV emitter roadmap

    Amano Hiroshi, Collazo Ramon, Santi Carlo De, Einfeldt Sven, Funato Mitsuru, Glaab Johannes, Hagedorn Sylvia, Hirano Akira, Hirayama Hideki, Ishii Ryota, Kashima Yukio, Kawakami Yoichi, Kirste Ronny, Kneissl Michael, Martin Robert, Mehnke Frank, Meneghini Matteo, Ougazzaden Abdallah, Parbrook Peter J., Rajan Siddharth, Reddy Pramod, Roemer Friedhard, Ruschel Jan, Sarkar Biplab, Scholz Ferdinand, Schowalter Leo J., Shields Philip, Sitar Zlatko, Sulmoni Luca, Wang Tao, Wernicke Tim, Weyers Markus, Witzigmann Bernd, Wu Yuh-Renn, Wunderer Thomas, Zhang Yuewei

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   53 巻 ( 50 )   2020年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Physics D: Applied Physics  

    DOI: 10.1088/1361-6463/aba64c

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  15. Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps

    Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Kojima Kazunobu, Chichibu Shigefusa F.

    APPLIED PHYSICS EXPRESS   13 巻 ( 12 )   2020年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    DOI: 10.35848/1882-0786/abcb49

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  16. Surface passivation of light emitting diodes: From nano-size to conventional mesa-etched devices

    Seong Tae-Yeon, Amano Hiroshi

    SURFACES AND INTERFACES   21 巻   2020年12月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Surfaces and Interfaces  

    DOI: 10.1016/j.surfin.2020.100765

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  17. State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods

    Evropeitsev Evgenii A., Kazanov Dmitrii R., Robin Yoann, Smirnov Alexander N., Eliseyev Ilya A., Davydov Valery Yu., Toropov Alexey A., Nitta Shugo, Shubina Tatiana V., Amano Hiroshi

    SCIENTIFIC REPORTS   10 巻 ( 1 ) 頁: 19048   2020年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Scientific Reports  

    DOI: 10.1038/s41598-020-76042-0

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    PubMed

  18. Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy

    Robin Y., Bournet Q., Avit G., Pristovsek M., Andre Y., Trassoudaine A., Amano H.

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   35 巻 ( 11 )   2020年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Semiconductor Science and Technology  

    DOI: 10.1088/1361-6641/abad73

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  19. Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    PHOTONICS RESEARCH   8 巻 ( 11 ) 頁: 1786 - 1791   2020年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Photonics Research  

    DOI: 10.1364/PRJ.401785

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  20. Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate

    Yang Xu, Pristovsek Markus, Nitta Shugo, Liu Yuhuai, Honda Yoshio, Koide Yasuo, Kawarada Hiroshi, Amano Hiroshi

    ACS APPLIED MATERIALS & INTERFACES   12 巻 ( 41 ) 頁: 46466 - 46475   2020年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ACS applied materials & interfaces  

    DOI: 10.1021/acsami.0c11883

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  21. Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes

    Zhang Ziyi, Kushimoto Maki, Horita Masahiro, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS LETTERS   117 巻 ( 15 )   2020年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Letters  

    DOI: 10.1063/5.0027789

    Web of Science

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  22. Optical properties of neodymium ions in nanoscale regions of gallium nitride

    Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

    OPTICAL MATERIALS EXPRESS   10 巻 ( 10 ) 頁: 2614 - 2623   2020年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Optical Materials Express  

    DOI: 10.1364/OME.401765

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  23. Single-chip imaging system that simultaneously transmits light

    Wang Yongjin, Gao Xumin, Fu Kang, Qin Feifei, Zhu Hongbo, Liu Yuhuai, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   13 巻 ( 10 ) 頁: .   2020年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Web of Science

  24. Single-chip imaging system that simultaneously transmits light

    Wang Y.

    Applied Physics Express   13 巻 ( 10 )   2020年10月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    DOI: 10.35848/1882-0786/abb786

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  25. WPTシステム実現のための 高周波GaNパワーデバイス 招待有り 査読有り

    天野 浩

    電子情報通信学会誌 IEICE誌   103 巻 ( 10 ) 頁: 1016 - 1022   2020年10月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:研究論文(学術雑誌)  

    その他リンク: https://www.journal.ieice.org/bin/pdf_link.php?fname=k103_10_1016&lang=J&year=2020

  26. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

    Sato Shin-ichiro, Deki Manato, Nishimura Tomoaki, Okada Hiroshi, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Ohshima Takeshi

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   479 巻   頁: 7 - 12   2020年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms  

    DOI: 10.1016/j.nimb.2020.06.007

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  27. Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   117 巻 ( 10 )   2020年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Letters  

    DOI: 10.1063/5.0010774

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  28. Design and characterization of a low-optical-loss UV-C laser diode

    Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 9 ) 頁: .   2020年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Web of Science

  29. Design and characterization of a low-optical-loss UV-C laser diode

    Zhang Z.

    Japanese Journal of Applied Physics   59 巻 ( 9 )   2020年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.35848/1347-4065/abaac6

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  30. Increasing the Luminescence Efficiency of Long-Wavelength (In,Ga)N Quantum Well Structures by Electric Field Engineering Using an (Al,Ga)N Capping Layer

    Vichi Stefano, Robin Yoann, Sanguinetti Stefano, Pristovsek Markus, Amano Hiroshi

    PHYSICAL REVIEW APPLIED   14 巻 ( 2 )   2020年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1103/PhysRevApplied.14.024018

    Web of Science

  31. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

    Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 8 ) 頁: .   2020年8月

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  32. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

    Kimura T.

    Japanese Journal of Applied Physics   59 巻 ( 8 )   2020年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.35848/1347-4065/aba0d5

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  33. Growth of high-quality GaN by halogen-free vapor phase epitaxy

    Kimura T.

    Applied Physics Express   13 巻 ( 8 )   2020年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    DOI: 10.35848/1882-0786/aba494

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  34. Growth of high-quality GaN by halogen-free vapor phase epitaxy

    Kimura Taishi, Kataoka Keita, Uedono Akira, Amano Hiroshi, Nakamura Daisuke

    APPLIED PHYSICS EXPRESS   13 巻 ( 8 )   2020年8月

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  35. Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF MATERIALS CHEMISTRY C   8 巻 ( 25 ) 頁: 8668 - 8675   2020年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Materials Chemistry C  

    DOI: 10.1039/d0tc01369b

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  36. Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p-n diodes

    Nakano T.

    Applied Physics Letters   117 巻 ( 1 )   2020年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/5.0010664

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  37. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   13 巻 ( 7 ) 頁: .   2020年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

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  38. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

    Sandupatla A.

    Applied Physics Express   13 巻 ( 7 )   2020年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    DOI: 10.35848/1882-0786/ab93a0

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  39. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

    Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   217 巻 ( 14 )   2020年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Physica Status Solidi (A) Applications and Materials Science  

    DOI: 10.1002/pssa.201900955

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  40. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

    Liu Q.

    Journal of Crystal Growth   539 巻   2020年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Crystal Growth  

    DOI: 10.1016/j.jcrysgro.2020.125643

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  41. Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

    Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   13 巻 ( 6 ) 頁: .   2020年6月

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  42. Halide vapor phase epitaxy of p-Type Mg-doped GaN utilizing MgO

    Ohnishi K.

    Applied Physics Express   13 巻 ( 6 )   2020年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    DOI: 10.35848/1882-0786/ab9166

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  43. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

    Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   539 巻   2020年6月

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  44. Oxygen Incorporation Kinetics in Vicinal m(10-10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy

    Yosho Daichi, Shintaku Fumiya, Inatomi Yuya, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   14 巻 ( 6 )   2020年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Physica Status Solidi - Rapid Research Letters  

    DOI: 10.1002/pssr.202000142

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  45. Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors.

      11 巻 ( 5 )   2020年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.3390/mi11050519

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  46. Improving the Leakage Characteristics and Efficiency of GaN-based Micro-Light-Emitting Diode with Optimized Passivation

    Lee Hoon, Lee Jung-Hoon, Park Jin-Seong, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 5 )   2020年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ECS Journal of Solid State Science and Technology  

    DOI: 10.1149/2162-8777/ab915d

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  47. Impact of high-Temperature implantation of Mg ions into GaN

    Takahashi M.

    Japanese Journal of Applied Physics   59 巻 ( 5 )   2020年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.35848/1347-4065/ab8b3d

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  48. Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE

    Shintaku Fumiya, Yosho Daichi, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   13 巻 ( 5 ) 頁: .   2020年5月

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  49. Impact of high-temperature implantation of Mg ions into GaN

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 5 ) 頁: .   2020年5月

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  50. Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE

    Shintaku F.

    Applied Physics Express   13 巻 ( 5 )   2020年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    DOI: 10.35848/1882-0786/ab8723

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  51. Improved Leakage and Output Characteristics of Pixelated LED Array for Headlight application

    Lee Sang-Youl, Kang Kiman, Lee Eunduk, Jo Yoomin, Kim Doyub, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 4 )   2020年4月

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    DOI: 10.1149/2162-8777/ab8b6f

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  52. Experimental observation of high intrinsic thermal conductivity of AlN

    Cheng Zhe, Koh Yee Rui, Mamun Abdullah, Shi Jingjing, Bai Tingyu, Huynh Kenny, Yates Luke, Liu Zeyu, Li Ruiyang, Lee Eungkyu, Liao Michael E., Wang Yekan, Yu Hsuan Ming, Kushimoto Maki, Luo Tengfei, Goorsky Mark S., Hopkins Patrick E., Amano Hiroshi, Khan Asif, Graham Samuel

    PHYSICAL REVIEW MATERIALS   4 巻 ( 4 )   2020年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1103/PhysRevMaterials.4.044602

    Web of Science

  53. Tungsten carbide layers deposited on graphite substrates via a wet powder process as anti-parasitic-reaction coatings for reactor components in GaN growth

    Nakamura Daisuke, Kimura Taishi, Itoh Kenji, Fujimoto Naoki, Nitta Shugo, Amano Hiroshi

    CRYSTENGCOMM   22 巻 ( 15 ) 頁: 2632 - 2641   2020年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1039/c9ce01971e

    Web of Science

  54. Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

    Lee Sang-Youl, Moon Ji Hyung, Moon Yong-Tae, Kim Chung Song, Park Sunwoo, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    IEEE PHOTONICS TECHNOLOGY LETTERS   32 巻 ( 7 ) 頁: 438 - 441   2020年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE Photonics Technology Letters  

    DOI: 10.1109/LPT.2020.2977376

    Web of Science

    Scopus

  55. Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers

    Hainey Mel Jr., Robin Yoann, Avit Geoffrey, Amano Hiroshi, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   535 巻   2020年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Crystal Growth  

    DOI: 10.1016/j.jcrysgro.2020.125522

    Web of Science

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  56. Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

    Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   257 巻 ( 4 )   2020年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Physica Status Solidi (B) Basic Research  

    DOI: 10.1002/pssb.201900553

    Web of Science

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  57. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

    Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J., Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS LETTERS   116 巻 ( 12 )   2020年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Letters  

    DOI: 10.1063/1.5145017

    Web of Science

    Scopus

  58. Effects of Ultraviolet Wavelength and Ambient Temperature on Reliability of Silicones in InAlGaN-Based Light-Emitting-Diode Package

    Kim Ho-Young, Lee Jong-Woo, Jun Duk-Jin, Song Sung-Joo, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 3 )   2020年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1149/2162-8777/ab7c40

    Web of Science

  59. Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

    Yamamoto K, Nakano K, Tanaka A, Honda Y, Ando Y, Ogura M, Matsumoto M, Anada S, Ishikawa Y, Amano H, Hirayama T

    Microscopy (Oxford, England)   69 巻 ( 1 ) 頁: 1-10   2020年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1093/jmicro/dfz037

    Scopus

    PubMed

  60. Using SiO<inf>2</inf>-based distributed Bragg reflector to improve the performance of AlGaInP-based red micro-light emitting diode

    Lee S.Y.

    ECS Journal of Solid State Science and Technology   9 巻 ( 3 )   2020年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ECS Journal of Solid State Science and Technology  

    DOI: 10.1149/2162-8777/ab74c3/pdf

    Scopus

  61. Using SiO2-Based Distributed Bragg Reflector to Improve the Performance of AlGaInP-Based Red Micro-Light Emitting Diode

    Lee Sang-Youl, Moon Ji Hyung, Moon Yong-Tae, Choi Byoungjun, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 3 )   2020年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1149/2162-8777/ab74c3

    Web of Science

  62. Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode

    Sato Daiki, Honda Anna, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

    MICROELECTRONIC ENGINEERING   223 巻   2020年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Microelectronic Engineering  

    DOI: 10.1016/j.mee.2020.111229

    Web of Science

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  63. Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode

    Lee Da-Hoon, Kang Daesung, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   53 巻 ( 4 )   2020年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/1361-6463/ab52d0

    Web of Science

  64. Oblique-angle deposited SiO<inf>2</inf>/Al omnidirectional reflector for enhancing the performance of AlGaN-based ultraviolet light-emitting diode

    Lee J.

    ECS Journal of Solid State Science and Technology   9 巻 ( 2 )   2020年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1149/2162-8777/ab709a

    Scopus

  65. Heavy Mg Doping to Form Reliable Rh Reflective Ohmic Contact for 278 nm Deep Ultraviolet AlGaN-Based Light-Emitting Diodes

    Lee Sang-Youl, Han Dae-Seob, Lee Yong-Gyeong, Choi Kwang-Ki, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 6 )   2020年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1149/2162-8777/aba914

    Web of Science

  66. Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

    Abhinay S., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 1 )   2020年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.7567/1347-4065/ab65cd

    Web of Science

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  67. Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum

    Sato D.

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   38 巻 ( 1 )   2020年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1116/1.5120417

    Scopus

  68. Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    2D MATERIALS   7 巻 ( 1 )   2020年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:2D Materials  

    DOI: 10.1088/2053-1583/ab46e6

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  69. Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

    Ye Z.

    Japanese Journal of Applied Physics   59 巻 ( 2 )   2020年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.35848/1347-4065/ab6fb0

    Scopus

  70. Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN

    Dinh D.V.

    Semiconductor Science and Technology   35 巻 ( 3 )   2020年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/1361-6641/ab63f1

    Scopus

  71. Damage-Free Plasma Etching to Enhance Performance of AlGaInP-Based Micro-Light Emitting Diode

    Lee Sang-Youl, Lee Eunduk, Moon Ji-Hyung, Choi Byoungjun, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    IEEE PHOTONICS TECHNOLOGY LETTERS   32 巻 ( 17 ) 頁: 1041 - 1044   2020年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE Photonics Technology Letters  

    DOI: 10.1109/LPT.2020.3010820

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  72. マクロステップを持つ<i>c</i>面AlN/サファイアテンプレート上に成長させたAlGaN量子井戸の物性評価

    小島 一信, 長澤 陽祐, 平野 光, 一本松 正道, 杉江 隆一, 本田 善央, 天野 浩, 赤﨑 勇, 秩父 重英

    日本結晶成長学会誌   47 巻 ( 3 )   2020年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    <p>  The microscopic structural and optical characteristics of AlGaN light-emitting diodes (LEDs) fabricated on the AlN templates with dense macrosteps are shown to clarify the origin of their high internal quantum efficiency of radiation (IQE). The cross-sectional transmission electron microscopy observations under the high-angle annular dark field scanning mode and microscopic energy dispersive X-ray spectroscopy revealed that the AlGaN cladding layer under the AlGaN quantum well (QW) layer had a microscopic compositional modulation, which originates from the macrosteps at the AlN template surface. Moreover, Ga-rich portions in the cladding layer behaved as current micropaths, and the micropaths are connected with the carrier localization structure formed in QWs. The in-plane cathodoluminescence (CL) spectroscopy showed a significant inhomogeneity of the CL characteristics. The gentle slopes at the sample surface showed brighter emissions with a lower peak photon energy, confirming the carrier localization. This carrier localization structure in the QWs combined with the current micropaths in the cladding layer can increase the IQE as well as external quantum efficiency of the AlGaN LEDs.</p>

    DOI: 10.19009/jjacg.47-3-04

    CiNii Article

  73. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    GALLIUM NITRIDE MATERIALS AND DEVICES XV   11280 巻   2020年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Proceedings of SPIE - The International Society for Optical Engineering  

    DOI: 10.1117/12.2544704

    Web of Science

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  74. Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy alpha-particle detection

    Sandupatia A., Arulkurnaran S., Ranjan K., Ng G. I, Murumu P. P., Kennedy J., Deki M., Nitta S., Honda Y., Amano H.

    2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020)     2020年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  75. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

    Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     頁: 349 - 352   2020年

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    掲載種別:研究論文(学術雑誌)  

    Web of Science

  76. GaN基板向けレーザスライシング技術の開発

    河口 大祐, 田中 敦之, 油井 俊樹, 伊ヶ崎 泰則, 和仁 陽太郎, 天野 浩

    年次大会   2020 巻 ( 0 )   2020年

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人 日本機械学会  

    DOI: 10.1299/jsmemecj.2020.S16306

    CiNii Article

  77. Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe -Type n-Contact and Reflective Bonding Pad

    Kim Jong-Ho, Lee Yong Won, Im Hyeong-Seop, Oh Chan-Hyoung, Shim Jong-In, Kang Daesung, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 1 )   2019年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ECS Journal of Solid State Science and Technology  

    DOI: 10.1149/2.0462001JSS

    Web of Science

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  78. Preface-JSS Focus Issue on Recent Advances inWide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki

    Ren Fan, Mishra Kailash C., Amano Hiroshi, Collins John, Han Jung, Im Won Bin, Kneissl Michael, Seong Tae-Yeon, Setlur Anant, Suski Tadek, Zych Eugeniusz

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 1 )   2019年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ECS Journal of Solid State Science and Technology  

    DOI: 10.1149/2.0452001JSS

    Web of Science

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  79. Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

    Nagasawa Yosuke, Sugie Ryuichi, Kojima Kazunobu, Hirano Akira, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    JOURNAL OF APPLIED PHYSICS   126 巻 ( 21 )   2019年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Applied Physics  

    DOI: 10.1063/1.5125623

    Web of Science

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  80. Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS     2019年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1002/pssb.201900554

    Web of Science

  81. A 271.8 nm deep-ultraviolet laser diode for room temperature operation

    Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   12 巻 ( 12 )   2019年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/1882-0786/ab50e0

    Web of Science

  82. Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

    Dinh Duc V., Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   34 巻 ( 12 )   2019年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/1361-6641/ab4d2c

    Web of Science

  83. Low Voltage High-Energy alpha-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ranjan Kumud, Ng Geok Ing, Murmu Peter P., Kennedy John, Nitta Shugo, Honda Yoshio, Deki Manato, Amano Hiroshi

    SENSORS   19 巻 ( 23 )   2019年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Sensors (Switzerland)  

    DOI: 10.3390/s19235107

    Web of Science

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    PubMed

  84. Improvement in the Reliability of AlGaInP-Based Light-Emitting Diode Package Using Optimal Silicone and Leadframe Structure

    Kim Ho-Young, Lee Jong Woo, Moon Young Min, Oh Jeong Tak, Jeong Hwan-Hee, Song June-O, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   9 巻 ( 1 )   2019年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1149/2.0332001JSS

    Web of Science

  85. Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

    Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SCIENTIFIC REPORTS   9 巻   2019年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1038/s41598-019-52067-y

    Web of Science

  86. Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application

    Kang Daesung, Oh Jeong-Tak, Song June-O, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   12 巻 ( 10 )   2019年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/1882-0786/ab45d1

    Web of Science

  87. V-shaped dislocations in a GaN epitaxial layer on GaN substrate

    Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

    AIP ADVANCES   9 巻 ( 9 )   2019年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.5114866

    Web of Science

  88. Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    MICROELECTRONICS RELIABILITY   100 巻   2019年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Microelectronics Reliability  

    DOI: 10.1016/j.microrel.2019.113418

    Web of Science

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  89. Via-Hole-Type Flip-Chip Packaging to Improve the Thermal Characteristics and Reliability of Blue Light Emitting Diodes

    Kim Ho Young, Lim Chang Man, Kim Ki Seok, Oh Jeong Tak, Jeong Hwan-Hee, Song June-O, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   8 巻 ( 9 ) 頁: Q165 - Q170   2019年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ECS Journal of Solid State Science and Technology  

    DOI: 10.1149/2.0171909jss

    Web of Science

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  90. Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes

    Kim Dae-Hyun, Park Young Soo, Kang Daesung, Kim Kyoung-Kook, Seong Tae-Yeon, Amano Hiroshi

    JOURNAL OF ALLOYS AND COMPOUNDS   796 巻   頁: 146-152   2019年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jallcom.2019.05.070

    Web of Science

  91. Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

    Sarzynski Marcin, Grzanka Ewa, Grzanka Szymon, Targowski Grzegorz, Czernecki Robert, Reszka Anna, Holy Vaclav, Nitta Shugo, Liu Zhibin, Amano Hiroshi, Leszczynski Mike

    MATERIALS   12 巻 ( 16 )   2019年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.3390/ma12162583

    Web of Science

  92. Influence of Temperature-Dependent Substrate Decomposition on Graphene for Separable GaN Growth

    Park Jeong-Hwan, Lee Jun-Yeob, Park Mun-Do, Min Jung-Hong, Lee Je-Sung, Yang Xu, Kang Seokjin, Kim Sang-Jo, Jeong Woo-Lim, Amano Hiroshi, Lee Dong-Seon

    ADVANCED MATERIALS INTERFACES     2019年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1002/admi.201900821

    Web of Science

  93. Fabrication of a GaInN/GaInP/GaInAs/Ge four-junction solar cell using the wafer bonding technology

    Takahashi Kazuya, Shinoda Ryoji, Mitsufuji Syun, Iwaya Motoaki, Kamiyama Satoshi, Takeuchi Tetsuya, Hattori Tomokazu, Akasaki Isamu, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( 7 )   2019年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.7567/1347-4065/ab26ad

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  94. Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Torigoe Kazuhisa, Kushimoto Maki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( 7 )   2019年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.7567/1347-4065/ab2657

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  95. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

    Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   516 巻   頁: 63-66   2019年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jcrysgro.2019.03.025

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  96. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current

    Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   114 巻 ( 23 )   2019年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.5097767

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  97. Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

    Liu Qiang, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SC )   2019年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.7567/1347-4065/ab124e

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  98. Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming

    Robin Yoann, Hemeret Francois, D'Inca Gillian, Pristovsek Markus, Trassoudaine Agnes, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SC )   2019年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.7567/1347-4065/ab06ae

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  99. Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors

    Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SC )   2019年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.7567/1347-4065/ab06b9

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  100. Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SC )   2019年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.7567/1347-4065/ab106c

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  101. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates

    Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SC )   2019年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.7567/1347-4065/ab1250

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  102. Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

    Nan Hu, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SC )   2019年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.7567/1347-4065/ab1252

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  103. Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285nm deep-ultraviolet LEDs grown on AlN templates having macrosteps

    Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Ipponmatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    APPLIED PHYSICS EXPRESS   12 巻 ( 6 )   2019年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/1882-0786/ab21a9

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  104. Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

    Evropeitsev Evgeniy A., Robin Yoann, Shubina Tatiana V., Bae Si-Young, Nitta Shugo, Kirilenko Demid A., Davydov Valery Y., Smirnov Alexandr N., Toropov Alexey A., Kushimoto Maki, Ivanov Sergey V., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   256 巻 ( 6 )   2019年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1002/pssb.201800648

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  105. Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   514 巻   頁: 13-13   2019年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jcrysgro.2019.02.058

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  106. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

    Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   512 巻   頁: 78-83   2019年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jcrysgro.2019.02.013

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  107. Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE

    Duc V Dinh, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   512 巻   頁: 100-104   2019年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jcrysgro.2019.02.020

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  108. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

    Kneissl Michael, Seong Tae-Yeon, Han Jung, Amano Hiroshi

    NATURE PHOTONICS   13 巻 ( 4 ) 頁: 233-244   2019年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1038/s41566-019-0359-9

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  109. GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

    Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    AIP ADVANCES   9 巻 ( 4 )   2019年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.5087491

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  110. Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method

    Yamada Jumpei, Usami Shigeyoshi, Ueda Yuki, Honda Yoshio, Amano Hiroshi, Maruyama Takahiro, Naritsuka Shigeya

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( 4 )   2019年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.7567/1347-4065/aafe70

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  111. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

    Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   509 巻   頁: 50-53   2019年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jcrysgro.2018.12.007

    Web of Science

  112. GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors

    Cai Wei, Yuan Jialei, Ni Shuyu, Shi Zheng, Zhou Weidong, Liu Yuhuai, Wang Yongjin, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   12 巻 ( 3 )   2019年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/1882-0786/ab023c

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  113. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

    Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

    MATERIALS   12 巻 ( 5 )   2019年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.3390/ma12050689

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  114. Morphological study of InGaN on GaN substrate by supersaturation

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   508 巻   頁: 58-65   2019年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jcrysgro.2018.12.028

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  115. How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

    Hu Nan, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   507 巻   頁: 205 - 208   2019年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Crystal Growth  

    DOI: 10.1016/j.jcrysgro.2018.11.013

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  116. Pole figure analysis from electron backscatter diffraction-an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy

    Hainey Mel Jr., Robin Yoann, Amano Hiroshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   12 巻 ( 2 )   2019年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    DOI: 10.7567/1882-0786/aafb26

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  117. Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   12 巻 ( 2 )   2019年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    DOI: 10.7567/1882-0786/aafdb9

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  118. Compositional control of homogeneous InGaN nanowires with the In content up to 90%

    Zeghouane Mohammed, Avit Geoffrey, Andre Yamina, Bougerol Catherine, Robin Yoann, Ferret Pierre, Castelluci Dominique, Gil Evelyne, Dubrovskii Vladimir G., Amano Hiroshi, Trassoudaine Agnes

    NANOTECHNOLOGY   30 巻 ( 4 ) 頁: 044001   2019年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nanotechnology  

    DOI: 10.1088/1361-6528/aaec39

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    PubMed

  119. Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core- shell nanorods

    Robin Y., Evropeitsev E. A., Shubina T. V., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Eliseyev I. A., Bae S. Y., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

    NANOSCALE   11 巻 ( 1 ) 頁: 193 - 199   2019年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nanoscale  

    DOI: 10.1039/c8nr05863f

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  120. Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps

    Kojima K., Nagasawa Y., Hirano A., Ippommatsu M., Honda Y., Amano H., Akasaki I., Chichibu S. F.

    APPLIED PHYSICS LETTERS   114 巻 ( 1 )   2019年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Letters  

    DOI: 10.1063/1.5063735

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  121. 286 nm monolithic multicomponent system

    Yuan Jialei, Jiang Yan, Shi Zheng, Gao Xumin, Wang Yongjin, Sun Xiaojuan, Li Dabing, Liu Yuhuai, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( 1 )   2019年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.7567/1347-4065/aaf3aa

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  122. 高感度電子線ホログラフィーによるGaN系半導体のドーパント濃度分布の観察

    仲野 靖孝, 本田 善央, 天野 浩, 松本 実子, 穴田 智史, 山本 和生, 石川 由加里, 平山 司, 安藤 悠人, 小倉 昌也, 田中 敦之

    まてりあ   58 巻 ( 2 ) 頁: 103-103   2019年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.2320/materia.58.103

    CiNii Article

  123. Electronic structure analysis of core structures of threading dislocations in GaN

    Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)     頁: .   2019年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

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  124. MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire

    Dinh Duc V., Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   502 巻   頁: 14-18   2018年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jcrysgro.2018.09.001

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  125. What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

    Robin Y., Pristovsek M., Amano H., Oehler F., Oliver R. A., Humphreys C. J.

    JOURNAL OF APPLIED PHYSICS   124 巻 ( 18 )   2018年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Applied Physics  

    DOI: 10.1063/1.5047240

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  126. Simultaneous Growth of Various InGaN/GaN Core-Shell Microstructures for Color Tunable Device Applications

    Robin Yoann, Liao Yaqiang, Pristovsek Markus, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   215 巻 ( 21 )   2018年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Physica Status Solidi (A) Applications and Materials Science  

    DOI: 10.1002/pssa.201800361

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  127. Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method

    Kashima Masahiro, Sato Daiki, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi, Iijima Hokuto, Meguro Takashi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   36 巻 ( 6 )   2018年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics  

    DOI: 10.1116/1.5048061

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  128. Full-duplex light communication with a monolithic multicomponent system

    Wang Yongjin, Wang Xin, Zhu Bingcheng, Shi Zheng, Yuan Jialei, Gao Xumin, Liu Yuhuai, Sun Xiaojuan, Li Dabing, Amano Hiroshi

    LIGHT-SCIENCE & APPLICATIONS   7 巻   2018年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1038/s41377-018-0083-0

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  129. Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

    Avit Geoffrey, Zeghouane Mohammed, Andre Yamina, Castelluci Dominique, Gil Evelyne, Bae Si-Young, Amano Hiroshi, Trassoudaine Agnes

    CRYSTENGCOMM   20 巻 ( 40 ) 頁: 6207 - 6213   2018年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:CrystEngComm  

    DOI: 10.1039/c8ce01177j

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  130. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

    Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   57 巻 ( 10 )   2018年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.57.105501

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  131. High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   498 巻   頁: 377-380   2018年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jcrysgro.2018.07.015

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  132. Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Murakami Satoshi, Kushimoto Maki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   57 巻 ( 9 )   2018年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.57.091001

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  133. Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

    Barry Ousmane I., Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   12 巻 ( 8 )   2018年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Physica Status Solidi - Rapid Research Letters  

    DOI: 10.1002/pssr.201800124

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  134. Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering

    Ueoka Yoshihiro, Deki Meneto, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   57 巻 ( 7 )   2018年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    DOI: 10.7567/JJAP.57.070302

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  135. Study on the Main-Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN-Based DUV-LEDs

    Yamada Kiho, Nagasawa Yosuke, Nagai Shoko, Hirano Akira, Ippommatsu Masamichi, Aosaki Ko, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   215 巻 ( 10 )   2018年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Physica Status Solidi (A) Applications and Materials Science  

    DOI: 10.1002/pssa.201700525

    Web of Science

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  136. Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

    Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

    SCIENTIFIC REPORTS   8 巻   2018年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1038/s41598-018-25473-x

    Web of Science

  137. m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates

    Tanaka Atsushi, Ando Yuto, Nagamatsu Kentaro, Deki Manato, Cheong Heajeong, Ousmane Barry, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   215 巻 ( 9 )   2018年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Physica Status Solidi (A) Applications and Materials Science  

    DOI: 10.1002/pssa.201700645

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  138. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Nagamatsu Kentaro, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   11 巻 ( 5 )   2018年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    DOI: 10.7567/APEX.11.051002

    Web of Science

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  139. Transferrable monolithic multicomponent system for near-ultraviolet optoelectronics

    Qin Chuan, Gao Xumin, Yuan Jialei, Shi Zheng, Jiang Yuan, Liu Yuhuai, Wang Yongjin, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   11 巻 ( 5 )   2018年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    DOI: 10.7567/APEX.11.051201

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  140. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Sugawara Yoshihiro, Yao Yong-Zhao, Ishikawa Yukari

    APPLIED PHYSICS LETTERS   112 巻 ( 18 )   2018年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Letters  

    DOI: 10.1063/1.5024704

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  141. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures

    Oh Jeong-Tak, Lee Sang-Youl, Moon Yong-Tae, Moon Ji Hyung, Park Sunwoo, Hong Ki Yong, Song Ki Young, Oh Chan-Hyoung, Shim Jong-In, Jeong Hwan-Hee, Song June-O, Amano Hiroshi, Seong Tae-Yeon

    OPTICS EXPRESS   26 巻 ( 9 ) 頁: 11194-11200   2018年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1364/OE.26.011194

    Web of Science

  142. The 2018 GaN power electronics roadmap

    Amano H., Baines Y., Beam E., Borga Matteo, Bouchet T., Chalker Paul R., Charles M., Chen Kevin J., Chowdhury Nadim, Chu Rongming, De Santi Carlo, De Souza Maria Merlyne, Decoutere Stefaan, Di Cioccio L., Eckardt Bernd, Egawa Takashi, Fay P., Freedsman Joseph J., Guido L., Haeberlen Oliver, Haynes Geoff, Heckel Thomas, Hemakumara Dilini, Houston Peter, Hu Jie, Hua Mengyuan, Huang Qingyun, Huang Alex, Jiang Sheng, Kawai H., Kinzer Dan, Kuball Martin, Kumar Ashwani, Lee Kean Boon, Li Xu, Marcon Denis, Maerz Martin, McCarthy R., Meneghesso Gaudenzio, Meneghini Matteo, Morvan E., Nakajima A., Narayanan E. M. S., Oliver Stephen, Palacios Tomas, Piedra Daniel, Plissonnier M., Reddy R., Sun Min, Thayne Iain, Torres A., Trivellin Nicola, Unni V., Uren Michael J., Van Hove Marleen, Wallis David J., Wang J., Xie J., Yagi S., Yang Shu, Youtsey C., Yu Ruiyang, Zanoni Enrico, Zeltner Stefan, Zhang Yuhao

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   51 巻 ( 16 )   2018年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Physics D: Applied Physics  

    DOI: 10.1088/1361-6463/aaaf9d

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  143. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy 査読有り

    XuYang, ShugoNitta, KentaroNagamatsu, Si-YoungBae, Ho-JunLee, YuhuaiLiu, MarkusPristovsek, YoshioHonda, HiroshiAmano

    Journal of Crystal Growth   482 巻 ( 15 ) 頁: 1-8   2018年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Hexagonal boron nitride (h-BN) was directly grown on sapphire substrate using alternating ammonia
    (NH3) and triethylboron (TEB) supply (pulsed mode) in metalorganic vapor phase epitaxy. The best condition
    is when just enough NH3 is supplied to fully convert the TEB within one cycle. Excess NH3 caused
    islands on h-BN film surface while a lack of NH3 does not form h-BN at all. The epitaxial relationship
    between grown h-BN layer and c-plane sapphire was confirmed to be [0001]h-BN // [0001]sapphire and
    [10-10]h-BN // [11-20]sapphire. It is known that, compared to AlN, BN requires higher V/III ratios for good crystallinity, which due to severe gas-phase reactions is difficult to achieve using continuous supply. Thus using pulsed mode the FWHM of the symmetric (0002) diffraction was almost halved and the
    growth rate was several times faster.

  144. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

    Yang Xu, Nitta Shugo, Nagamatsu Kentaro, Bae Si-Young, Lee Ho-Jun, Liu Yuhuai, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   482 巻 ( 15 ) 頁: 1 - 8   2018年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Crystal Growth  

    DOI: 10.1016/j.jcrysgro.2017.10.036

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  145. Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes

    Yates Luke, Pavlidis Georges, Graham Samuel, Usami Shigeyoshi, Nagamatsu Kentaro, Honda Yoshio, Amano Hiroshi

    PROCEEDINGS OF THE 17TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2018)     頁: 831-837   2018年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Web of Science

  146. 「材料研究の楽しさ」

    天野 浩

    表面と真空   61 巻 ( 9 ) 頁: 565-567   2018年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    半導体の王者は言わずと知れたSiである。市場規模を比べると,化合物半導体全部含めてもSiの1/10にも満たない。それでも化合物半導体,とりわけGaN系窒化物半導体にこだわっている理由は,この材料の物性自体がとても興味深いこと,およびSiでは出来ないことが出来る,或いは今後できそうだからである。本寄稿では,筆者が学生の頃からこれまで30年以上もの間取り組んでいるGaN系窒化物半導体材料の研究で,特に表面と真空について学んだことを中心に書かせて頂くことにする。

    DOI: 10.1380/vss.61.565

    CiNii Article

  147. Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN

    Nakano Takashi, Araidai Masaaki, Shiraishi Kenji, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8   86 巻 ( 12 ) 頁: 41 - 49   2018年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ECS Transactions  

    DOI: 10.1149/08612.0041ecst

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  148. DFT modeling of carbon incorporation in GaN(0001) and GaN(000(1)over-bar) metalorganic vapor phase epitaxy 査読有り

    Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano

    APPLIED PHYSICS LETTERS   111 巻   頁: 141602/1-5   2017年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The carbon incorporation mechanism in GaN(0001) and GaN(000 (1) over bar) during MOVPE was investigated using density functional theory (DFT) calculations. The results confirm that the crucial factors for carbon incorporation are Fermi level pinning and accompanying surface band bending. In addition, the lattice symmetry has a strong dependence on the stability of carbon in a few subsurface layers, which results from interactions between the impurities and surface states. It was shown that these effects are responsible for facilitating or hindering the incorporation of impurities and dopants. The influence of diluent gas species (hydrogen or nitrogen) on carbon incorporation was discussed.

    DOI: 10.1063/1.4991608

  149. DFT modeling of carbon incorporation in GaN(0001) and GaN(000(1)over-bar) metalorganic vapor phase epitaxy

    Kempisty Pawel, Kangawa Yoshihiro, Kusaba Akira, Shiraishi Kenji, Krukowski Stanislaw, Bockowski Michal, Kakimoto Koichi, Amano Hiroshi

    APPLIED PHYSICS LETTERS   111 巻 ( 14 )   2017年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.4991608

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  150. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

    Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano

    APPLIED PHYSICS LETTERS   111 巻   頁: 122102/1-5   2017年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.

    DOI: 10.1063/1.4994627

  151. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

    Sang Liwen, Ren Bing, Sumiya Masatomo, Liao Meiyong, Koide Yasuo, Tanaka Atsushi, Cho Yujin, Harada Yoshitomo, Nabatame Toshihide, Sekiguchi Takashi, Usami Shigeyoshi, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   111 巻 ( 12 )   2017年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.4994627

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  152. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations 査読有り

    Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, and Hiroshi Amano

    Applied Physics Express   10 巻   頁: 082101/1-4   2017年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/APEX.10.082101

  153. Low cost high voltage GaN polarization superjunction field effect transistors

    Kawai H., Yagi S., Hirata S., Nakamura F., Saito T., Kamiyama Y., Yamamoto M., Amano H., Unni V., Narayanan E. M. S.

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   214 巻 ( 8 ) 頁: 1600834/1-10   2017年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Physica Status Solidi (A) Applications and Materials Science  

    DOI: 10.1002/pssa.201600834

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  154. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE 査読有り

    Atsushi Tanaka, Ousmane1 Barry, Kentaro Nagamatsu, Junya Matsushita, Manato Deki, Yuto Ando, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi A   214 巻 ( 8 ) 頁: 1600829/1-5   2017年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    In this study, GaN m-plane Schottky barrier diodes fabricated with a metalorganic vapor-phase epitaxy on a GaN substrate were investigated using emission microscope, photoluminescence, and cathodoluminescence. In addition, facet dependence of leakage current under reverse-biased condition was observed. We showed that the leakage-current distribution was caused by the facet dependence of the carrier concentration and oxygen concentration. These results can provide important suggestions for the fabrication of m-plane devices. (a) four-faceted hillocks on m-plane GaN MOVPE sample, facet dependence of (b) leakage current and (c) PL peak intensity of the m-plane GaN Schottky barrier diode.

    DOI: 10.1002/pssa.201600829

  155. Effect of dislocations on the growth of p-type GaN and on the characteristics of p–n diodes 招待有り 査読有り

      214 巻 ( 8 ) 頁: 1600837/1-5   2017年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1002/pssb.201600722

  156. Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants 査読有り

    Si-Young Bae, Kaddour Lekhal, Ho-Jun Lee, Jung-Wook Min, Dong-Seon Lee, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi B   254 巻 ( 8 ) 頁: 1600722/1-7   2017年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Injecting current with a uniform carrier concentration is important for applications with three-dimensional architectures such as vertical power devices or displays. In III-nitride nanostructures, dopants not only incorporate differently depending on the surface orientation but can also seriously affect the kinetic equilibrium shapes of the nanorods. Herein, we report selective-area growth of doped GaN nanorods grown by pulsed-mode metalorganic chemical vapor deposition. Two dopants, Si and Mg, were employed as donor and acceptor atoms, respectively, for a mono-doping approach. Furthermore, a mixed flow of Si and Mg was supplied for a co-doping approach. We compared the morphological effects and growth rates of each doped GaN nanorod array. Then, we proposed appropriate growth mechanisms for the doped GaN nanorods on the basis of our structural characterizations. These results might extend the morphological functionality of GaN nanorods by including doping and may also provide an appropriate foundation for the design of nanostructure-based electronic or photonic devices.

    DOI: 10.1002/pssb.201600722

  157. Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system 査読有り

    Kentaro Nagamatsu, Shugo Nitta, Zheng Ye, Hirofumi Nagao, Shinichi Miki, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi B   254 巻 ( 8 ) 頁: 1600737/1-4   2017年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1002/pssb.201600737

  158. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations

    Tanikawa T.

    Applied Physics Express   10 巻 ( 8 )   2017年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/APEX.10.082101

    Scopus

  159. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

    Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   214 巻 ( 8 )   2017年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Physica Status Solidi (A) Applications and Materials Science  

    DOI: 10.1002/pssa.201600837

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  160. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

    Tanaka Atsushi, Barry Ousmane, Nagamatsu Kentaro, Matsushita Junya, Deki Manato, Ando Yuto, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   214 巻 ( 8 )   2017年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1002/pssa.201600829

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  161. Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity 査読有り

    Guangxu Ju, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    Applied Physics Letters   110 巻 ( 26 ) 頁: 262105/1-5   2017年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.4990687

  162. Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity

    Ju Guangxu, Tabuchi Masao, Takeda Yoshikazu, Amano Hiroshi

    APPLIED PHYSICS LETTERS   110 巻 ( 26 )   2017年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.4990687

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  163. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer 査読有り

    Zheng Sun, Peifeng Song, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   468 巻   頁: 866-869   2017年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jcrysgro.2017.01.31

  164. Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer 査読有り

    S.-Y.Bae, K. Lekhal, H.-J.Lee, T.Mitsunari, J.-W.Min, D.-S.Leed, M.Kushimoto, Y.Honda, H.Amano

    Journal of Crystal Growth   468 巻   頁: 110-113   2017年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jcrysgro.2016.10.032

  165. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer 査読有り

    Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Akira Tamura, Takafumi Suzuki, Maki KUshimoto, Yoshio HOnda, and Hiroshi Amano

    Journal of Crystal Growth   468 巻   頁: 547-551   2017年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jcrysgro.2016.11.116

  166. Effect of V/III ratio on the surface morphology and electrical properties of m–plane ( 101¯0 ) GaN homoepitaxial layers 査読有り

      468 巻   頁: 552-556   2017年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We have investigated the effect of V/III ratio on the surface morphology, impurity concentration and electrical properties of m–plane (101¯0) Gallium Nitride (GaN) homoepitaxial layers. Four-sided pyramidal hillocks are observed on the nominally on-axis m–plane GaN films. Hillocks sizes relatively increase by increasing the V/III ratio. All facets of pyramidal hillocks exhibit well-defined step-terrace features. Secondary ion mass spectrometry depth profiles reveal that carbon impurities decrease by increasing the V/III ratio while the lowest oxygen content is found at an optimized V/III ratio of 900. Vertical Schottky barrier diodes fabricated on the m–GaN samples were characterized. Low leakage current densities of the order of 10−10 A/cm2 at −5 V are obtained at the optimum V/III ratio. Oxygen impurities and screw-component dislocations around hillocks are found to have more detrimental impact on the leakage current mechanism.

    DOI: 10.1016/j.jcrysgro.2016.12.012

  167. Annealing effect on threading dislocations in a GaN grown on Si substrate 査読有り

      468 巻   頁: 835-838   2017年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Effect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a (111)Si substrate was investigated by photoluminescence (PL) and transmission electron microscopy (TEM) analyses. The PL spectra suggested that the density of gallium vacancy is not changed by the heat treatment up to 700 °C. In the TEM specimen, we had dislocation half loops generated by off-axis propagation of the threading dislocation. We found that the half-loop of c-type dislocation shrinks/moves by a repetitive RTA at 600–700 °C. In contrast, we could find no remarkable changes in the a-type or a+c-type dislocations.

    DOI: 10.1016/j.jcrysgro.2017.01.001

  168. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer

    Sun Zheng, Song Peifeng, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   468 巻   頁: 866 - 869   2017年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Crystal Growth  

    DOI: 10.1016/j.jcrysgro.2017.01.031

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  169. Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output 査読有り

    Michiko Kaneda, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   56 巻   頁: 061002   2017年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.56.061002

  170. III-nitride core-shell nanorod array on quartz substrates 査読有り

    Si-Young Bae, Jung-Wook Min, Hyeong-Yong Hwang, Kaddour Lekhal, Ho-Jun Lee, Young-Dahl Jho, Dong-Seon Lee, Yong-Tak Lee, Nobuyuki Ikarashi, Yoshio Honda & Hiroshi Amano

    Scientific reports   7 巻   頁: 45345   2017年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: doi:10.1038/srep45345

  171. III-nitride core-shell nanorod array on quartz substrates

    Bae Si-Young, Min Jung-Wook, Hwang Hyeong-Yong, Lekhal Kaddour, Lee Ho-Jun, Jho Young-Dahl, Lee Dong-Seon, Lee Yong-Tak, Ikarashi Nobuyuki, Honda Yoshio, Amano Hiroshi

    SCIENTIFIC REPORTS   7 巻   頁: 45345   2017年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Scientific Reports  

    DOI: 10.1038/srep45345

    Web of Science

    Scopus

    PubMed

  172. Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template

    Yasuda Toshiki, Takeuchi Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   10 巻 ( 2 )   2017年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    DOI: 10.7567/APEX.10.025502

    Web of Science

    Scopus

  173. Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template 査読有り

    Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Applied Physics Express   10 巻   頁: 025502   2017年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: https://doi.org/10.4567/APEX.10.025502

  174. From the dawn of gan-based light-emitting devices to the present day

    Amano H.

    Handbook of Solid-State Lighting and LEDs     頁: 3-12   2017年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1201/9781315151595

    Scopus

  175. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 degrees C by metalorganic vapor phase epitaxy

    Katsuno Shota, Yasuda Toshiki, Hagiwara Koudai, Koide Norikatsu, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   56 巻 ( 1 )   2017年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.56.015504

    Web of Science

  176. Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching 査読有り

    Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, and Hiroshi Amano

    Physica Status Solidi b   253 巻   頁: 1700387(1-7)   2017年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A gallium nitride (GaN) epitaxial layer with a low density of threading dislocations is successfully grown on a silicon substrate by using in situ gas
    etching. Silicon nitride (SiNx) film is used as a mask, and ammonia is intermittently supplied in hydrogen ambient during the etching. After etching,
    high-density deep pits appeared on the surface of a GaN template layer and corresponded to the threading dislocations in the layer. In this novel method,
    before growing an additional GaN layer on the template GaN layer, a second SiNx layer is deposited after the etching process, and this layer prevents GaN nuclei from growing on the upper side-walls of the pits. By using this method, the density of threading dislocations of the GaN surface is reduced to 6.7E7 cm2. This method is cost effective, completing all the necessary processes in one growth run without taking samples out from a metalorganic chemical vapor deposition (MOCVD) reactor.

    DOI: 10.1002/pssb.201700387

  177. Development of Sustainable Smart Society based on Transformative Electronics

    Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     頁: .   2017年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Web of Science

  178. Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides

    Amano Hiroshi

    III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION   133 巻   頁: 1 - 9   2017年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Topics in Applied Physics  

    DOI: 10.1007/978-981-10-3755-9_1

    Web of Science

    Scopus

  179. From the Dawn of GaN-Based Light-Emitting Devices to the Present Day

    Amano Hiroshi

    HANDBOOK OF SOLID-STATE LIGHTING AND LEDS     頁: 3-11   2017年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Web of Science

  180. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy 査読有り

    Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Japanese Journal of Applied Physics   56 巻   頁: 015504   2016年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: https://doi.org/10.7567/JJAP.56.015504

  181. Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer 査読有り

    Improved crystal quality of semipolar (10 1¯ 3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer

    Journal of Crystal Growth   454 巻   頁: 114-120   2016年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: https://doi.org/10.1016/j.jcrysgro.2016.09.004

  182. Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE 査読有り

    Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   447 巻   頁: 55-61   2016年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The selective area growth (SAG) of GaN was implemented on patterned GaN/sapphire templates by hydride vapor phase epitaxy (HVPE) to fabricate regular arrays of Ga-polar GaN microrods. The control of growth parameters such as H2/N2 carrier gas ratio, growth temperature, and absolute NH3/HCl gas flow resulted in changes in the growth morphology.

    DOI: 10.1016/j.jcrysgro.2016.05.008

  183. Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study 査読有り

    Shoko Nagai, Kiho Yamada, Akira Hirano, Masamichi Ippommatsu, Masahiro Ito, Naoki Morishima, Ko Aosaki, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   55 巻   頁: 082101/1-7   2016年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: http://doi.org/10.7567/JJAP.55.082101

  184. Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy 査読有り

    Tran Thien Duc, Galia Pozina, Hiroshi Amano, Bo Monemar, Erik Janz´en, and Carl Hemmingsson

    PHYSICAL REVIEW   B94 巻   頁: 045206/1-8   2016年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Deep levels in Mg-doped GaN grown by metal organic chemical vapor deposition, undoped GaN grown by MOCVD, and halide vapor phase epitaxy-grown GaN have been studied using deep level transient spectroscopy and minority charge carrier transient spectroscopy.

    DOI: 10.1103/PhysRevB.94.045206

  185. Study of radiation detection properties of GaN pn diode 査読有り

    Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano

    Japanese Journal of Applied Physics   55 巻   頁: 05FJ02/1-3   2016年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Recently, GaN, which has remarkable properties as a material for optical devices and high power electron devices, has also attracted attention as a material for radiation detectors. We previously suggested the use of BGaN as a neutron detector material. However, the radiation detection characteristics of GaN itself are not yet adequately understood. For realizing a BGaN neutron detector, the understanding of the radiation detection characteristics of GaN, which is a base material of the neutron detector, is important. In this study, we evaluated the radiation detection characteristics of GaN. We performed I V and energy spectrum measurements under alpha ray, gamma ray, and thermal neutron irradiations to characterize the radiation detection characteristics of a GaN diode. The obtained results indicate that GaN is an effective material for our proposed new BGaN-based neutron detector.

  186. Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction 査読有り

    Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction   55 巻 ( 5S ) 頁: 05FL03/1-5   2016年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  187. Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity 査読有り

    Daiki Sato, Tomohiro Nishitani, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   55 巻 ( 5S ) 頁: 05FH05/1-4   2016年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  188. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode 査読有り

    Byung Oh Jung, Si-Young Bae, Seunga Lee, Sang Yun Kim, Jeong Yong Lee, Yoshio Honda and Hiroshi Amano

    Nanoscale Research Letters   11 巻   2016年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.

    DOI: 10.1186/s11671-016-1441-6

  189. Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer 査読有り

    Zheng Sun, Kentaro Nagamatsu, Marc Olsson, Peifeng Song, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics,   55 巻 ( 5S ) 頁: 05FB06/1-5   2016年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  190. Growth of semipolar $(1\bar{1}01)$ high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001) 査読有り

    Maki Kushimoto, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   55 巻 ( 5S ) 頁: 05FA10/1-4   2016年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  191. Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering 査読有り

    Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Tadashi Mitsunari, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   55 巻 ( 5S ) 頁: 05FD03/1-4   2016年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Using an in situ laser absorption and scattering method, the surface roughness and incorporation of In in InGaN layers grown by metal organic vapor-phase epitaxy (MOVPE) were monitored.

  192. Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials 招待有り

    Hiroshi Amano

    Progress in Crystal Growth and Characterization of Materials   62 巻   頁: 126–135   2016年4月

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    担当区分:筆頭著者   記述言語:英語  

    DOI: https://doi.org/10.1016/j.pcrysgrow.2016.04.006

  193. Structural and optical study of core–shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum 査読有り

      55 巻 ( 5S ) 頁: 05FG03/1-8   2016年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We report on the material and optical properties of core–shell InGaN layers grown on GaN nanorod arrays. The core–shell InGaN layers were well grown on polarization-reduced surfaces such as semipolar pyramids and nonpolar sidewalls. In addition, to compensate the biaxial strain between GaN and InGaN layers, we grew interlayers underneath a thick InGaN layer. Here, the interlayers were composed of multiple superlattice structures. We could observe that the indium composition of core–shell InGaN structures increased with the number of interlayers. This indicates that the absorption energy band of InGaN alloys can be better matched to the spectral irradiance of the solar spectrum in nature. We also implemented a simulation of Ga-polar and nonpolar InGaN-based solar cells based on the indium composition obtained from the experiments. The result showed that nonpolar InGaN solar cells had a much higher efficiency than Ga-polar InGaN solar cells with the same thickness of the absorption layer.

  194. Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy 査読有り

    Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   55 巻   頁: 05FF03/1-5   2016年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  195. Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy 査読有り

    Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano and Koichi Kakimoto

    Japanese Journal of Applied Physics   55 巻 ( 5S ) 頁: 05FM01/1-4   2016年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  196. Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations 査読有り

    Seunga Lee, Yoshio Honda, Hiroshi Amano, Jongjin Jang and Okhyun Nam

    Japanese Journal of Applied Physics Rapid Communications   55 巻 ( 3 ) 頁: 030306/1-4   2016年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Using a SiN insertion layer to reduce dislocations, enhanced photovoltaic properties could be obtained in pin InGaN GaN heterojunction solar cell. To investigate the influence of the dislocations on the photovoltaic behaviors, a sample grown without SiN insertion layer was identically prepared for comparison. From optical properties measurements, the reduction in the number of non-radiative centers and a stronger In localization effect was shown in the sample with SiN insertion layer. However, the quantum confined stark effect was almost negligible in both the samples.

  197. Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells 査読有り

    Lee, Seunga; Honda, Yoshio; Amano, Hiroshi

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   49 巻 ( 2 ) 頁: 025103   2016年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    To understand the effect of piezoelectric fields on carrier dynamics, we numerically investigated a simple p-GaN/i-InxGa1-xN/n-GaN solar cell structure. A reliable simulation model was obtained by comparing the experimental and simulated results in advance.

  198. Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition 査読有り

    Si-Young Bae, Byung Oh Jung, Kaddour Lekhal, Sang Yun Kim, Jeong Yong Lee, Dong-Seon Lee, Manato Deki, Yoshio Honda and Hiroshi Amano

    CrystEngComm   18 巻   頁: 1505-1514   2016年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    . Unlike the thick and high (or middle)-quality GaN templates normally used, nanorod growth was performed on an ultrathin and low-quality AlN/Si platform. Using kinetically controlled growth conditions and a patterning process, exceptionally long GaN nanorods were achieved with high geometric precision.

    DOI: 10.1039/C5CE02056E

  199. The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer 査読有り

    Zheng Sun, Akio Ohta, Seiichi Miyazaki, Kentaro Nagamatsu, Hojun Lee, Marc Olsson, Zheng Ye, Manato Deki, Yoshio Honda, and Hiroshi Amano

    Japanese Journal of Applied Physics   55 巻   頁: 010303/1-3   2016年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Previously, we reported a growth method by MOVPE using a single two-dimensional growth step, resulting in 1.2-micron thick crack-free GaN directly grown on 6H-SiC substrate. The introduction of Al-treatment prior to the standard GaN growth step resulted in improved surface wetting of gallium on the SiC substrate.

  200. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation 招待有り 査読有り

    Hiroshi Amano

    Rev. Mod. Phys.   87 巻 ( 4 ) 頁: 1133-1138   2015年12月

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    担当区分:筆頭著者   記述言語:英語   掲載種別:研究論文(学術雑誌)  

    This is a personal history of one of the Japanese researchers engaged in developing a method for
    growing GaN on a sapphire substrate, paving the way for the realization of smart television and
    display systems using blue LEDs. The most important work was done in the mid to late 1980s. The
    background to the author's work and the process by which the technology enabling the growth of
    GaN and the realization of p-type GaN was established are reviewed.

  201. Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer 査読有り

    Tadashi Mitsunari, Ho Jun Lee, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   431 巻   頁: 60-63   2015年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We obtained single-crystalline semipolar (10View the MathML source1¯3)GaN on a nominal Si(001) substrate with sputtered AlN using the directional feature of sputtering.

    DOI: 10.1016/j.jcrysgro.2015.08.027

  202. Time-resolved photoluminescence properties of hybrids based on inorganic AlGaN/GaN quantum wells and colloidal ZnO nanocrystals 査読有り

    M. Forsberg, C. Hemmingsson, H. Amano, G. Pozina

    Superlattices and Microstructures   87 巻   頁: 38-41   2015年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Dynamic properties are studied for the AlGaN/GaN quantum well (QW) structures with and without the coating of colloidal ZnO nanocrystals (NCs). The QW exciton recombination rate was reduced in such hybrids compared to the bare QW structure only in the sample with the thinnest cap layer of 3 nm. Assuming that one of the recombination mechanisms in this hybrid is non-radiative resonant energy transfer (NRET) between the QW and the energy acceptor material i.e. ZnO NCs, the maximum pumping efficiency was estimated to be 0.42 at 60 K. The NRET effect is, however, vanished after several months despite that the hybrid structures are composed of chemically stable components.

    DOI: doi:10.1016/j.spmi.2015.07.017

  203. Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells 査読有り

    Hideaki Murotani, Yoichi Yamada, Yoshio Honda, and Hiroshi Amano

    Physica Status Solidi b   252 巻 ( 5 ) 頁: 940-945   2015年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The optical properties of InGaN/GaN multiple quantum wells (MQWs) have been studied by means of photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy.

    DOI: 10.1002/pssb.201451491

  204. Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges 査読有り

    Toshikiu Yasuda, Kento Hayashi, Syouta Katsuno, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, and Hiroshi Amano

    Physica Status Solidi a   212 巻 ( 5 ) 頁: 920-924   2015年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We investigated the influence of polarization charges in nitride-based semiconductors.

    DOI: 10.1002/pssa.201431730

  205. Resonant Raman and FTIR spectra of carbon doped GaN 査読有り

    S. Ito, H. Kobayashi, K. Arak,i, K. Suzuki, N. Sawaki, K. Yamashita, Y. HOnda, H. Amano

    Journal of Crystal Grwoth   414 巻 ( 15 ) 頁: 56-60   2015年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: doi:10.1016/j.jcrysgro.2014.11.024

  206. Electrical characteristics of a-plane low-Mg-doped p-GaN Schottky contacts 査読有り

    Moe Naganawa, Toshichika Aoki, Ji-Su Son, Hiroshi Amano, Kenji Shiojima

    physica status solidi (b)   252 巻 ( 5 ) 頁: 1024–1030   2015年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Electrical characteristics of a variety of Schottky contacts formed with ten metal species on the a-plane of p-type low-Mg-doped GaN grown on r-plane sapphire substrates were studied.

    DOI: 10.1002/pssb.201451581

  207. Optically pumped lasing properties of $(1\bar{1}01)$ InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates 査読有り

    Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda and Hiroshi Amano

    Applied Physics Express   8 巻 ( 2 ) 頁: 022702   2015年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We demonstrated lasing action and investigated the optical properties of (1 (1) over bar 01) multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating (1 (1) over bar 01) InGaN MQW laser diodes on (001) Si. (C) 2015 The Japan Society of Applied Physics

    DOI: doi:10.7567/APEX.8.022702

  208. Dynamic properties of excitons in ZnO/AlGaN/GaN hybrid nanostructures 査読有り

    Mathias Forsberg, Carl Hemmingsson, Hiroshi Amano , Galia Pozina

    Scientific Reports   5 巻   頁: 7889   2015年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    III-nitride semiconductor/organic polymer hybrid heterostructures combine advantages of epitaxially grown semiconductor quantum wells (QW) with inexpensive polymers having efficient luminescence in the visible region1. Such hybrid micro-structured light emitting diodes (LED) are promising for fabrication of low-cost and highly efficient microlight sources that can be used in full-color displays, imaging systems, miniature chemical and biological sensors. In typical polyfluorene/GaN-based LED hybrids, UV emission from a GaN heterostructure down converts to the organic polymer fluorescence in the visible region via a radiative energy transfer. Overlapping between the UV luminescence and the polyfluorene absorption is required for the operation
    of these hybrids. Today, a novel class of hybrid structures is suggested, in which a non-radiative resonant energy transfer (NRET) from excitation generated in inorganic QWs to excitons in organic films can be utilized. Such LEDs might be considerably more efficient than their radiative energy transfer analogues. In addition to the necessity of a significant spectral overlap between the QW emission and the polymer absorption spectrum, these devices require that the two materials are placed in a close interaction distance of a few nm. The bottleneck is that the operation lifetime of organic/semiconductor hybrid LED structures is limited by degradation
    of polyfluorenes. Using colloidal semiconductor nanocrystals (NCs) instead of polymers can significantly improve the lifetime of such devices. In addition to superior luminescence properties, relatively low cost and chemical stability, the spectral tunability can be achieved by changing the particle chemistry and size. The efficiency of non-radiative resonance energy transfer is typically determined using transient photoluminescence
    (PL) measurements from the quenching of the QW exciton lifetime in the presence of acceptor material (i.e.
    colloidal NCs or polyfluorene). It might be correct in assumption that NRET is the only additional recombination channel appearing in hybrids compared to the bareQWstructure. However, other factors can play also a significant role. For example, surface potential effects have to be considered when non-radiative resonant energy transfer is measured using dynamic properties of the QW excitons.
    Thus, in this work we have studied and discussed the possibility of NRET in hybrid structures fabricated using ZnO NCs films coated on the top of the AlGaN/GaN QWs samples. ZnO NCs satisfies the requirement of
    absorption overlapping with GaN emission (a room temperature band gap energy is 3.3 and 3.4 eV for ZnO and GaN, respectively). Dynamic properties ofQWexcitons in the hybrids and in the bareQWsamples are analyzed in dependence on the QWs cap layer thickness.

    DOI: doi:10.1038/srep07889

  209. Development of underfilling and encapsulation for deep-ultraviolet LEDs 査読有り

    Kiho Yamada, Yuuta Furusawa, Shoko Nagai, Akira Hirano, Masamichi Ippommatsu, Ko Aosaki, Naoki Morishima, Hiroshi Amano and Isamu Akasaki

    Applied Physics Express   8 巻 ( 1 ) 頁: 012101   2015年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  



    The currently available resins for underfilling and encapsulation are limited to wavelengths longer than approximately 330 nm because almost all resins are decomposed by deep-ultraviolet light. Fluorine resins are possible materials for underfilling and encapsulation in deep-ultraviolet LEDs, and we have investigated methods of underfilling and encapsulation using such resins. Also, their durability at wavelengths of 265 and 285 nm has been studied from the photochemical viewpoint, and we propose a stable amorphous fluorine resin that is optically isotropic. Also, a trial of encapsulation using the resin has been made.

    DOI: doi:10.7567/APEX.8.012101

  210. Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region 査読有り

    Jung, Byung Oh; Bae Si-Young; Kim, Sang Yun; Lee, Seunga; Lee, Jeong Yong; Lee, Dong-Seon; Kato, Yoshihiro; Honda, Yoshio ;Amano, Hiroshi

    Nano Energy   11 巻   頁: 294-303   2015年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Highly ordered, position-controlled gallium nitride (GaN) nanowire based multiple-quantum-wells (MQWs) core-shell architecture arrays are synthesized by metalorganic chemical vapor deposition (MOCVD). We investigate the possibility of using GaN nanowire arrays as a basal template for the growth of InxGa1-xN/GaN MQWs. The MQWs on three different crystal facets (c(-), m(-), and semipolar-plane) of GaN nanowire exhibit dissimilar structural properties. The structural characteristics of InGaN/GaN core-shell arrays are inspected by cross-sectional high-resolution transmission electron microscopy (HR-TEM). We also investigate the optical properties of MQW core-shell structure nanoarrays. The luminescent characteristics of InGaN/GaN core-shell structure arrays are determined by photoluminescence (PL) and cathodoluminescence (CL) measurements. The monochromatic CL images clearly show the light emission behavior of InGaN/GaN MQW coaxial structure. Two distinguishable light emission peaks were observed in the GaN nanowire based core-shell structure. The characteristic of light emission mainly depends on the properties of MQWs, which are generated from different crystal facets of GaN. In addition, the light emission intensity shows different behaviors depending on the area of the GaN nanowire m-plane. The results of this study suggest that GaN nanowire arrays can be used as a good alternative basal template for next-generation light-emitting diodes (LEDs).

    DOI: DOI: 10.1016/j.nanoen.2014.11.003

  211. Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy 査読有り

    Guangxu Ju, Shingo Fuchi, Masao Tabuchi, Hiroshi Amano, Isamu Akasaki

    Journal of Crystal Growth   407 巻   頁: 68-73   2014年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Continuous in situ X-rayreflectivity(XRR)measurementswereusedtoinvestigatethegrowthprocessof
    an In0.11Ga0.89N epilayeranditssinglequantumwellgrownonc-planeGaN/sapphiretemplatesusingan
    in-house-designed metalorganicvaporphaseepitaxyinstalledinalaboratory-gradeX-raydiffract-
    ometer.Thesurfacerougheningoftheepilayerasafunctionofgrowthtimewascalculatedfromthe
    continuous in situ XRR curve.Thegrowthrate,criticalthickness hc(r) for surfaceroughening,and
    roughening ratewereobtained.Theexperimentalcriticalthickness hc(r) of theIn0.11Ga0.89N epilayer
    analyzed fromthecontinuous in situ XRR curvewas14.870.4 nm.Basedonthecalculatedtheoretical
    critical thickness hc and theexperimental hc(r,2), Fischer's modelseemstobeappropriatefordescribing
    the criticalthicknessoftheInGaN/GaN.

    DOI: 10.1016/j.jcrysgro.2014.08.023

  212. Photoemission lifetime of a negative electron affinity gallium nitride photocathode 査読有り

    Tomohiro Nishitani, Masao Tabuchi, Hiroshi Amano, Takuya Maekawa, Makoto Kuwahara and Takashi Meguro

    Journal of Vacuum Science and Technology   B32 巻 ( 6 ) 頁: 06F901   2014年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A photocathode electron source using p-type GaN semiconductor with a negative electron affinity (NEA) surface has been studied for its ability to maintain an extended NEA state. The key technology of NEA photocathodes is the formation of electric dipoles by cesium and gallium atoms on the surface, which makes it possible for photoexcited electrons in the conduction band minimum to escape into the vacuum. This means that in order to keep the electron energy spread as small as possible, the excitation photon energy should be tuned to the band gap energy. However, the NEA surface is damaged by the adsorption of residual gas and the back-bombardment of ionized residual gas by photoelectrons. The p-type GaN semiconductor was measured time evolution in quantum yield during NEA surface activation, and a lifetime of quantum yield of excitation energy corresponding to the band gap energy in comparison to the p-type GaAs as the conventional NEA photocathode. In NEA surface activation process, the quantum yield of the GaN was more than 3 orders of magnitude higher than that of the GaAs by only cesium deposition. The exposure amount of cesium in the NEA surface activation of the GaAs was 1.5 times as that of the GaN, even though the quantum yield of the GaAs was the same value as the GaN. Lifetime of NEA-photocathodes using the GaN was 21 times longer than that using the GaAs. The decrease of quantum yield of the GaAs was well correlated in the form of the exponential decrease function with a decrease time of 4.4 h, while the decrease of quantum yield of the GaN was well correlated in the form of the exponential decrease function with two decrease times of 47 and 174 h.

  213. Nature of yellow luminescence band in GaN grown on Si substrate 査読有り

    Shogo Ito, Taihei Nakagita, Nobuhiko Sawaki, Hyung Soo Ahn, Masashi Irie, Toshiki Hikosaka, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Japanese Journal of Applied Physics   53 巻   頁: 11RC02/1-5   2014年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: doi:10.7567/JJAP.53.11RC02

  214. Atom probe tomography study of Mg-doped GaN layers 査読有り

    S Khromov, D Gregorius, R Schiller, J Lösch, M Wahl, M Kopnarski, H Amano, B Monemar, L Hultman and G Pozina

    Nanotechnology   25 巻 ( 27 )   2014年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: doi:10.1088/0957-4484/25/27/275701

  215. Characterization of nonpolar a-plane InGaN/GaN multiple quantum well 査読有り

    Ji-Su Son, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Japanese Journal of Applied Physics   53 巻   頁: 05FL01   2014年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The characteristics of nonpolar a-plane (1120) GaN (a-GaN) grown using single and double nanopillar SiO2 masks were investigated. The two
    nanopillar SiO2 masks were directly fabricated on an r-plane sapphire substrate and a-GaN by the epitaxial lateral overgrowth (ELOG) technique.
    Through the use of the single and double nanopillar SiO2 masks, the crystalline quality and optical properties of a-GaN were markedly improved
    because of the nanoscale ELOG effect and a number of voids in the single and double nanopillar SiO2 mask areas in comparison with the planar
    sample. The submicron pit densities of the planar, single, and double nanopillar mask samples were >2 ' e9, >7e8, and >4e8cm-2,
    respectively. The internal quantum efficiency (IQE) values at room temperature of three-period InGaN/GaN multiple quantum wells (MQWs) grown
    using the planar, single, and double nanopillar masks were 45, 60, and 68% at a carrier concentration of 1.0e18cm-3, respectively.

    DOI: 10.7567/JJAP.53.05FL01

  216. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy 査読有り

    Guangxu Ju, Yoshihiro Kato, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    physica status solidi (c)   11 巻 ( 3-4 ) 頁: 393-396   2014年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A set of GaN/GaInN single quantum wells (SQWs) were grown on c-plane GaN/sapphire templates using metal organic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The structural information on the interfaces and surfaces was obtained by fitting the experimental X-ray spectra and was compared between MOVPE and ALE mode. The X-ray crystal truncation rod (CTR) scattering measurement results showed that the samples grown by ALE had sharper interfaces than those grown by MOVPE. Both the X-ray reflectivity (XRR) curve-fitting results and atomic force microscope (AFM) results indicated that the surfaces of the ALE-grown SQWs were smoother than those of MOVPE-grown SQWs.

    DOI: 10.1002/pssc.201300670

  217. Enhancement of light output power on GaN based light emitting diodes using two direction stripe patterned sapphire substrate 査読有り

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi C   11 巻   頁: 722-725   2014年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    To achieve both the reduction of threading dislocation density (TDD) and the enhancement of light extraction efficiency (LEE) of light-emitting diodes (LEDs), a two-directional stripe-patterned sapphire substrate (TPSS) was fabricated. First, a stripe pattern parallel to the a-axis of Al2O3 was formed on an as-received c -sapphire wafer and then a second stripe pattern rotated around 3° from the m-axis of Al2O3 was formed on the first stripe PSS. The light output power of TPSS LEDs was around 1.25 times higher than that of LEDs on a flat sapphire substrate. This enhancement is caused by the increase of both the internal quantum efficiency (IQE) and the LEE. On the other hand, although the LED on TPSS with the second stripe just parallel to the m-axis of Al2O3 showed a similar enhancement ratio of the light output power, the current leakage of this LED increased with the concentration of threading dislocations on the surface of LEDs. Stripes rotated 3° from the m-axis of Al2O3 changed the growth mode and realized GaN films with a smooth surface without pit formation. Therefore, the misalignment of the stripe from the m-axis of Al2O3 will become a new design parameter for realizing high-efficiency reliable LEDs.

    DOI: 10.1002/pssc.201300470

  218. Epitaxial growth of GaN by REMOCVD in the downflow of a very high frequency(VHF) N2/H2 excited plasma 査読有り

    Yi Lu, Hiroki Kondo,Kenji Ishikawa,Osamu Oda,KeigoTakeda,Makoto Sekine, Hiroshi Amano,Masaru Hori

    Journal of Crystal Growth   391 巻   頁: 97-103   2014年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We found that this REMOCVD allowed the growth of epitaxial GaN films of the wurtzite structure of (0001) orientation on sapphire substrates with a high growth rate of 0.42 μm/h at a low temperature of 800 °C. The present REMOCVD is a promising method for GaN growth at relatively low temperature and without using costly ammonia gas.

    DOI: 10.1016/j.jcrysgro.2014.01.014

  219. Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays 査読有り

    Cao Miao, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Japanese Journal of Applied Physics   53 巻   頁: 0303060   2014年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Regularly distributed nanopyramid arrays with a highly uniform size were grown by selective-area growth. The nanopyramid size could be tuned by varying the growth time. Two emission peaks were observed from multiple quantum wells grown on the nanopyramids. The longer-wavelength peak originated from the apexes of pyramids with threefold symmetry. High-density stacking faults observed at these triangular apexes might be responsible for the higher indium incorporation. The formation of embedded voids inside the pyramids was explained by the different growth rates at the edge and center of the mask window caused by the low diffusion length.

    DOI: 10.7567/JJAP.53.030306

  220. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy 査読有り

    Guangxu Ju, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    Journal of Applied Physics   115 巻   頁: 094906   2014年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The effects of GaN quantum barriers with changing growth temperatures on the interfacial
    characteristics of GaN/InGaN single quantum well (SQW) grown on GaN templates by metalorganic
    vapour phase epitaxy were in situ investigated by X-ray crystal truncation rod (CTR) scattering and
    X-ray reflectivity measurements at growth temperature using a laboratory level X-ray diffractometer.
    Comparing the curve-fitting results of X-ray CTR scattering spectra obtained at growth temperature
    with that at room temperature, the InxGa1-xN with indium composition less than 0.11 was stabile of
    the indium distribution at the interface during the whole growth processes.

    DOI: 10.1063/1.4867640

  221. Multijunction GaInN-based solar cells using a tunnel junction 査読有り

    Hironori Kurokawa, Mitsuru Kaga, Tomomi Goda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Applied Physics Express   7 巻 ( 3 ) 頁: 034104   2014年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We fabricated and characterized a two-junction GaInN-based solar cell using a tunnel junction fabricated by crystal growth. This solar cell has two active layers with a differing bandgap energy corresponding to blue or green light. We confirmed that the open-circuit voltage (VOC) in this solar cell was increased by the series connection using the tunnel junction. The short-circuit current density, VOC, fill factor, and energy conversion efficiency of this solar cell were 0.28 mA/cm2, 3.0 V, 0.5, and 0.41%, respectively, under an air mass filter of 1.5 G at 1-sun irradiation and room temperature.

    DOI: 10.7567/APEX.7.034104

  222. Novel activation process for Mg-implanted GaN 査読有り

    Shin Hashimoto, Takao Nakamura, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   388 巻   頁: 112-115   2014年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A novel activation process for Mg-implanted GaN was demonstrated. As opposed to the conventional thermal annealing process, an H2/NH3 alternating supply annealing process achieved better optical activation, stronger near-ultraviolet luminescence and weaker yellow luminescence in the photoluminescence spectroscopy. After this process, small hexagonal hillocks were observed on the surface, which indicated that crystal regrowth was induced by this process, consisting of decomposition of GaN by H2 supplies and re-crystallization by NH3 supplies. It was revealed that the implanted Mg could easily be located at the activation site by means of crystal regrowth by this process.

    DOI: doi:10.1016/j.jcrysgro.2013.07.011

  223. Properties of the main Mg-related acceptors in GaN from optical and structural studies 査読有り

    B. Monemar, P. P. Paskov, G. Pozina, C. Hemmingsson, J. P. Bergman, S. Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoç, H. Amano, M. Iwaya, and I. Akasaki

    Journal of Applied Physics   115 巻   頁: 053507   2014年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The luminescent properties of Mg-doped GaN have recently received particular attention, e.g., in the
    light of new theoretical calculations, where the deep 2.9 eV luminescence band was suggested to be
    the main optical signature of the substitutional MgGa acceptor, thus, having a rather large binding
    energy and a strong phonon coupling in optical transitions. We present new experimental data on
    homoepitaxial Mg-doped layers, which together with the previous collection of data give an
    improved experimental picture of the various luminescence features in Mg-doped GaN.

    DOI: 10.1063/1.4862928

  224. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching 査読有り

    Ji-Su Son, Yoshio Honda, and Hiroshi Amano

    Optics Express   22 巻 ( 3 ) 頁: 3585-3592   2014年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Nonpolar a-plane (11-20) GaN (a-GaN) layers with low overall defect density and high crystalline quality were grown on r-plane sapphire substrates using etched a-GaN. The a-GaN layer was etched by pulse NH3 interrupted etching.

    DOI: 10.1364/OE.22.003585

  225. Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique 査読有り

    Byung Oh Jung, Si-Young Bae, Yoshihiro Kato, Masataka Imura, Dong-Seon Lee, Yoshio Honda and Hiroshi Amano

    CrystEngComm   16 巻   頁: 2273-2282   2014年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    we demonstrate a scalable process for the precise position-controlled selective growth of
    GaN nanowire arrays by metalorganic chemical vapor deposition (MOCVD) using a pulsed-mode growth
    technique. The location, orientation, length, and diameter of each GaN nanowire are controlled via
    pulsed-mode growth parameters such as growth temperature and precursor injection and interruption
    durations.

    DOI: 10.1039/c3ce42266f

  226. Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates 査読有り

    Ji-Su Son, Y. Honda, M. Yamaguchi, H. Amano, K. H. Baik, Y. G. Seo and S. M. Hwang

    Thin Solid Films   546 巻 ( 11 ) 頁: 108-113   2013年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We report on the characteristics of a-plane GaN films directly grown on optimized silicon-dioxide-patterned r-plane sapphire substrates. Various shapes and sizes of silicon dioxide patterns were considered with the aim of achieving fully coalescent a-plane GaN films with a smooth surface and high crystalline quality. The omega full widths at half maximum of the X-ray rocking curve values of optimized a-plane GaN films with regular hexagonal patterns of 1 micron window width and 6 micron mask width were measured to be 597 arcsec along the c-axis direction and 457 arcsec along the m-axis direction. Atomic force microscopy images revealed a significant reduction in the density of submicron pits in the mask region.

  227. Effects of exciton localization on internal quantum efficiency of InGaN nanowires 査読有り

    Hideaki Murotani, Yoichi Yamada, Takuya Tabata, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Journal of Applied Physics   114 巻   頁: 153506   2013年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Internal quantum efficiency of InGaN nanowires grown by PA MBE was investigated in detail.

    DOI: 10.1063/1.4825124

  228. Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy 査読有り

    Tomohiro Doi, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JB14   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    InGaN/AlGaN multi-quantum wells (MQWs) were grown by metalorganic vapor phase epitaxy. The In composition of the InGaN well layer was found to increase with the tensile strain of the AlGaN barrier layer. The InGaN/AlGaN strain-compensated structure can be grown at a higher growth temperature than that of the InGaN/GaN MQW, which shows that the same emission wavelength and thus the density of the V-defects can be effectively suppressed.

    DOI: 10.7567/JJAP.52.08JB14

  229. GaN Overgrowth on Thermally Etched Nanoporous GaN Template 査読有り

    Cao Miao, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JB03   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A thermal-etching process for fabricating nanoporous GaN templates in a metalorganic vapor phase epitaxy (MOVPE) reactor was proposed. Such nanoporous templates exhibited nearly complete strain relaxation and considerably increased photoluminescence (PL) intensity. The threading dislocation density (TDD) after overgrowth was reduced from 3 ×109 to 4 ×108 cm-2 for the template with poor quality, whereas little improvement was observed for the high-quality template (TDD, 4 ×108 cm-2). Multiple quantum wells (MQWs) grown on a nanoporous template fabricated from the high-quality GaN template were used to assess the effect on LED performance. The PL intensity of the sample with a nanoporous structure showed a twofold increase in PL intensity compared with the control sample.

    DOI: 10.7567/JJAP.52.08JB03

  230. Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer 査読有り

    Takaya Yamada, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Japanese Journal of Applied Physics   52 巻   頁: 08JB16   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    GaN films were successfully grown on Si(111) substrates using a reactive-sputter-deposited AlN intermediate layer (sp-AlN) at 350 °C. Uniform GaN growth was obtained with the pre sputtering of a thin Al film before the deposition of sp-AlN. Atomic force microscopy (AFM) measurements revealed that the density of pits originating from the ends of mixed/screw-type dislocations is about 109 cm-2, which is much lower than that of GaN grown on a metalorganic vapor phase epitaxy (MOVPE) deposited AlN intermediate layer. The decrease in the pit density might have originated from the small number of initial nuclei of GaN.

    DOI: 10.7567/JJAP.52.08JB16

  231. Fabrication of InGaN/GaN Multiple Quantum Wells on (1-101) GaN 査読有り

    Tomoyuki Tanikawa, Tomotaka Sano, Maki Kushimoto, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JC05   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    InGaN/GaN multiple quantum wells (MQWs) on semipolar (1101) GaN microstripes on a Si substrate were fabricated and their optical properties were investigated. From cathodoluminescence (CL) analysis, strong CL emission was obtained in an MQW emitting at 433 nm. However, dark lines appeared in MQWs emitting at longer wavelengths. These dark lines are attributed to lattice relaxation and the generation of misfit dislocations and stacking faults in an MQW, resulting in nonradiative centers. The internal quantum efficiency (IQE) was estimated from excitation-power-dependent photoluminescence analysis. The (1101) InGaN/GaN MQW had a high IQE owing to the high crystalline quality of the underlying GaN and the reduced piezoelectric field. The IQE at a carrier concentration of 1×1018 cm-3 in a sample emitting at 490 nm was as high as 90%. The efficiency decreased in a sample with a higher indium content in the MQW due to the generation of misfit dislocations and stacking faults.

    DOI: 10.7567/JJAP.52.08JC05

  232. Stacking Faults and Luminescence Property of InGaN Nanowires 査読有り

    Takuya Tabata, Jihyun Paek, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JE06   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    InGaN nanowires (NWs) were grown on (111)Si substrate using radio-frequency plasma-assisted molecular beam epitaxy, and the density of the stacking faults (SFs) in the InGaN NWs was estimated. High-density SFs were observed in the scanning transmission electron microscopy (STEM) and transmission electron microscopy (TEM) images of the InGaN NWs, and a few zincblende layers appeared in the wurtzite structure. When growth temperature increased, the density of the SFs in the InGaN NW, the photoluminescence (PL) peak wavelength, and the full width at half maximum (FWHM) of PL spectra decreased, whereas the integrated PL intensity increased. These results suggest that a high growth temperature is effective for decreasing the density of SFs in InGaN NWs, and InGaN NWs grown at high temperature have strong PL luminescence due to the low In composition and the corresponding low SFs density.

    DOI: 10.7567/JJAP.52.08JE06

  233. Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire 査読有り

    Ji-Su Son, Cao Miao, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Yong Gon Seo, Sung-Min Hwang, and Kwang Hyeon Baik

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JC04   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We report on the combined effects of a-plane GaN layers on a nanoscale patterned insulator on an r-plane sapphire substrate and epitaxial lateral overgrowth (ELOG) techniques. The fully coalescent a-plane GaN layer using nano- and microscale SiO2 masks showed the formation of nano- and microscale voids on the masks, respectively. Atomic force microscopy (AFM) measurements revealed a surface roughness of 0.63 nm and a submicron pit density of 7.8 ×107 cm-2. Photoluminescence (PL) intensity was enhanced by a factor of 9.0 in comparison with that of a planar sample. Omega full-width at half-maximum (FWHM) values of the (1120) X-ray rocking curve along the c- and m-axes were 553 and 788 arcsec, respectively. A plan-view cathodoluminescence (CL) mapping image showed high luminescence intensity on the SiO2 masks.

    DOI: 10.7567/JJAP.52.08JC04

  234. High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate 査読有り

    Tomotaka Sano, Tomohiro Doi, Shunko Albano Inada, Tomohiko Sugiyama, Yoshio Honda, Hiroshi Amano, and Takashi Yoshino

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JK09   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We fabricated blue, blue-green, and green light-emitting diodes (LEDs) of different dislocation densities (DD) and characterized their internal quantum efficiency (IQE). The IQE of the blue LEDs fabricated using GaN substrate exceeded 90 percent, however, when we used a GaN-on-sapphire substrate, IQE was limited to 60 percent. Droop was reduced by use of the GaN substrate. The junction temperature of the GaN-on-sapphire substrate was found to be 200 degreeC although the junction temperature of the GaN substrate was 50 degreeC when a forward current of 100 A/cm2 was driven. A lowering of IQE in green LEDs to 60 percent was observed, even though we used a low-dislocation-density substrate.The junction temperature of blue-green and green LEDs was about 100 degreeC when a forward current of 177 A/cm2 was driven, which indicated that junction temperature is not a major factor for IQE suppression in green LEDs.

    DOI: 10.7567/JJAP.52.08JK09

  235. Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern 査読有り

    Koji Okuno, Takahide Oshio, Naoki Shibata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JB09   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A sapphire substrate with a grooved stripe pattern along different radial directions was prepared to investigate the effects of stripe direction on the growth mode and threading dislocation (TD) behavior of GaN films. When the stripe direction is oriented parallel to [1010]sapphire, the GaN films have a triangular structure that is formed by the GaN{1011} facets. As the stripe direction rotates from [1010]sapphire, nanosteps with a step height of around 80 nm are formed on the GaN{1011} facets and then the coalescence of GaN on the ridges and grooves advances. GaN films with a smooth surface and a TD density as low as 2.0×108 cm-2 were achieved when the stripe direction was rotated 3° from [1010]sapphire. Our result indicates that the surface roughness and TD density of GaN films can be controlled by precisely adjusting the angle of the stripe direction from [1010]sapphire.

    DOI: 10.7567/JJAP.52.08JB09

  236. Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer 査読有り

    Toshiya Ohata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JB11   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A thick InGaN film was grown on a sapphire substrate by metal organic vapor phase epitaxy using a thin buffer layer of sputter-deposited InGaN. A thick film of highly luminescent In0.2Ga0.8N can be successfully grown at a rate as high as 2 µm/h. The crystal quality of InGaN grown on the sputter-deposited InGaN buffer layer was better than that of InGaN grown directly on the sapphire substrate. The sample showed n-type conduction with a carrier concentration and mobility of 5×1018 cm-3 and 3 cm2/(V·s), respectively.

    DOI: 10.7567/JJAP.52.08JB11

  237. Combination of ITO and SiO2/AlN Dielectric Multilayer Reflective Electrodes for UV-Emitting Diodes 査読有り

    Tsubasa Nakashima, Kenichiro Takeda, Hiroshi Shinzato, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JG07   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We have investigated novel reflective electrodes by combining an ITO layer and a SiO2/AlN dielectric multilayer (DM) for UV-light-emitting diodes (LEDs). The reflectance of 10 pairs of SiO2/AlN DM reached 98.5 percent at 350 nm. As a result, the ITO/DM electrodes simultaneously satisfied the requirements of high reflectivity in the UV region, good contact characteristics, and current spreading. The light output power of the UV LED with an ITO/DM electrode is 1.2 and 1.6 times higher than those of LEDs with ITO/Al and Ni/Au electrodes, respectively.

    DOI: 10.7567/JJAP.52.08JG07

  238. GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy 査読有り

    Shinta Nakagawa, Takuya Tabata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JE07   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Self-assembled GaN and InGaN nanowires (NWs) were directly grown on a highly oriented pyrolytic graphite (HOPG) substrate by radio frequency molecular beam epitaxy (RF-MBE). The GaN NWs grown on HOPG had a shorter length and larger diameter than those grown conventionally on a Si(111) substrate based on the analysis of scanning electron microscopy (SEM) images. They were also found to have good crystalline qualities with few stacking faults, as determined by scanning transmission electron microscopy (STEM) analysis. Photoluminescence (PL) measurements at room temperature indicated that the luminescence intensity of the GaN NWs on HOPG is stronger than that of NWs grown on a Si(111) substrate; however, the InGaN NWs on both substrates showed similar tendencies with respect to the shift of the luminescence wavelength as a function of the growth temperature. While In incorporation decreased as the growth temperature increased, the uniformity of the InGaN NW arrays improved rapidly.

    DOI: 10.7567/JJAP.52.08JE07

  239. Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes 査読有り

    Mikiko Mori, Shinichiro Kondo, Shota Yamamoto, Tatsuro Nakao1, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 )   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We investigated the concentration properties of GaInN-based solar cells using different window electrodes. A significant difference was observed between the concentrating properties of the window electrode structures. It was clearly found that indium tin oxide (ITO) is suitable as an electrode. The short-circuit current density, open-circuit voltage, fill factor, and energy conversion efficiency of nitride-based solar cells fabricated using an ITO electrode were 7.1×102 mA/cm2, 2.2 V, 79%, and 4.0%, respectively, under an air mass filter of 1.5G at 300 suns and at room temperature.

    DOI: 10.7567/JJAP.52.08JH02

  240. Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires 査読有り

    Hideaki Murotani, Hiroya Andoh, Takehiko Tsukamoto, Toko Sugiura, Yoichi Yamada, Takuya Tabata, Yoshio Honda, Masatoshi Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JE10   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The internal quantum efficiency (IQE) of InGaN nanowires with different emission wavelength of 485, 515, 555, and 580 nm has been studied by means of photoluminescence (PL) spectroscopy. It was found from the analysis of IQE as a function of excitation power density that the IQE was unchanged at about 100% under weak excitation conditions at low temperature. This indicated that the effects of nonradiative recombination processes were negligibly small at low temperature. Moreover, the IQE increased from 5 to 12% with increasing emission wavelength from 485 to 580 nm. Since the clear correlation between the IQE and the PL blue shift due to band filling effects of localized states was observed, the increase in the IQE reflected the increase in the effect of exciton localization with increasing indium composition.

    DOI: 10.7567/JJAP.52.08JE10

  241. Luminescence of Acceptors in Mg-Doped GaN 査読有り

    Bo Monemar, Sergey Khromov, Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Hiroshi Amano, Vitaliy Avrutin, Xing Li, and Hadis Morkoç

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JJ03   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    It is concluded that the typical PL peaks at 3.466 eV (ABE1)and the broader 3.27 eV DAP PL are the expected standard PL signatures of the substitutional Mg acceptor. Additional broader peaks at 3.455 eV (ABE2) and 3.1 eV are suggested to be related to the same acceptors perturbed by nearby basal plane stacking faults. The low temperature metastability of PL spectra is assigned to a nonradiative metastable deep level.

    DOI: 10.7567/JJAP.52.08JJ03

  242. Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20 > and <1-100 > Zone-Axes of AlN for Polarity Determination 査読有り

    Masataka Imura, Ujjal Gautam, Kiyomi Nakajima, Yasuo Koide, Hiroshi Amano, and Kenji Tsuda

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JE15   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    To accurately and easily determine the polarity of AlN using transmission electron microscopy, we compare the convergent-beam electron diffraction (CBED) patterns along the widely used <1120 > and <1100 > zone-axes. For the <1120 > zone-axis, the diffraction disk of g= 0002 differs from that of g= 0002, while for <1100 >, the diffraction disks of g= 0002 and 0002 are similar. The preferential clarity of these two disks is explained using Bloch-wave dynamical theory. To further support the explanation, we compare the results of GaN case. On the basis of our analysis, we conclude that the CBED patterns of the <1120 > zone-axis are more useful for accurately determining AlN polarity compared to the CBED patterns along the <1100 > zone-axis.

    DOI: 10.7567/JJAP.52.08JE15

  243. Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities 査読有り

    Kimiyasu Ide, Yuko Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki, and Hiroshi Amano

    Jpn. J. Appl. Phys.   52 巻 ( 8 ) 頁: 08JE22   2013年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Using the epitaxial lateral growth technique, we compared the crystallinity and relaxation ratio of 3-µm- and 200-nm-thick Al0.5Ga0.5N on an AlN template and AlN grown by epitaxial lateral overgrowth (ELO-AlN), both of which were grown on a sapphire substrate. Although the relaxation ratios of 3-µm-thick Al0.5Ga0.5N were almost the same, the misfit dislocation density at the interface and the density of threading dislocations reaching the surface of Al0.5Ga0.5N were significantly different. Also, the increase in the density of newly generated misfit dislocations was found to be highly dependent on the quality of the AlN underlying layer. We also discuss the difference in the initial growth mode of each Al0.5Ga0.5N sample.

    DOI: 10.7567/JJAP.52.08JE22

  244. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN 査読有り

    Hiroshi Amano

    Japanese journal of applied physics   52 巻 ( 5 ) 頁: 050001-1-050001-10   2013年5月

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    担当区分:筆頭著者   記述言語:英語   掲載種別:研究論文(学術雑誌)  

    With the continuously increasing demand for the conservation and generation of energy, bulk substrates of group III nitride semiconductors are highly expected to maximize their potential. In this report, I review the current status of the growth methods for bulk GaN single crystals used for substrates as well as summarize the characteristics of blue light-emitting diodes (LEDs), heterojunction field-effect transistors (HFETs), and photovoltaic cells on GaN substrates.

    DOI: 10.7567/JJAP.52.050001

  245. AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN 査読有り

    T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

    Journal of Crystal Growth   370 巻 ( 1 ) 頁: 16-21   2013年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The GaN/AlN multilayer structure was grown on a stripe-patterned and dot-patterned Si substrate, and subsequently annealed at 1200 °C in H2 and NH3 atmosphere. We achieved an AlN/air structure by the decomposition of GaN from the microcracks of AlN. Partially crack-free AlN layers were observed over a 5×5 μm area in the c-plane of AlN/air DBRs.

    DOI: 10.1016/j.jcrysgro.2012.09.062

  246. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy 査読有り

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Tanaka, Shigeyasu; Amano, Hiroshi

    Physica Status Solidi C   10 巻 ( 3 ) 頁: 369-372   2013年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 0.1002/pssc.201200587

  247. Effects of low energy e-beam irradiation on cathodoluminescence from GaN 査読有り

    Suihkonen, S.; Nykaenen, H.; Tanikawa, T.; Yamaguchi, M.; Honda, Y.; Amano, H.

    Physica Status Solidi A   210 巻 ( 2 ) 頁: 383-385   2013年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1002/pssa.201228457

  248. Development of High-Density Nitrogen Radical Source for Low Mosaicity and High Rate Growth of InGaN Films in Molecular Beam Epitaxy 査読有り

    Chen, S ; Kawai, Y ; Kondo, H ; Ishikawa, K ; Takeda, K ; Kano, H ; Sekine, M ; Amano, H Hori, M

    Japanese Journal of Applied Physics   52 巻 ( 2 ) 頁: 021001-021006   2013年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A high-density radical source (HDRS) was developed by optimizing the antenna structure and introducing an external magnetic field to plasma. Nitrogen radical generation by the HDRS at a density of 2.3 ×1012 atoms cm-3, which was one order higher than that for the conventional radical source (CRS), was achieved. The HDRS- and CRS-assisted InGaN growth in molecular beam epitaxy (MBE) was carried out. For the HDRS case, a diffraction peak in the X-ray rocking curve of the grown InGaN films showed a narrower peak, which width below 600 arcsec even with a high growth rate of 1.4 µm/h for InGaN. MBE with the assistance of HDRS has a great potential in the growth of nitride films with a lower mosaicity and a higher growth rate.

    DOI: 10.7567/JJAP.52.021001

  249. Surface potential effect on excitons in AlGaN/GaN quantum well structures 査読有り

    Pozina, G.; Hemmingsson, C.; Amano, H.; Monemar, B.

    Applied Physics Letters   102 巻 ( 8 ) 頁: 082110/1-082110/4   2013年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.4793568

  250. Individual roles of atoms and ions during hydrogen plasma passivation of surface defects on GaN created by plasma etching 査読有り

    Chen, Shang; Ishikawa, Kenji; Lu, Yi; Kometani, Ryosuke; Kondo, Hiroki; Tokuda, Yutaka; Egawa, Takashi; Amano, Hiiroshi; Sekine, Amano; Hori, Masaru

    Japanese Journal of Applied Physics   51 巻 ( 11 ) 頁: 111002/1-11102/5   2012年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    In the recovery of photoluminescence intensities for band-edge emissions at around 3.47 eV in the case of gallium nitride (GaN), we have studied the individual roles of hydrogen atoms (H) and hydrogen ions (H-n(+)). Surface defects such as nitrogen vacancies created by plasma etching were passivated by H termination. By utilizing hydrogen plasmas, we clarified the recovery efficiency by optical and stoichiometrical improvements with respect to the balance between the fluxes of H and H-n(+). By deflecting H-n(+) by applying an electric field, the efficiency was improved using an identical H dosage, since the simultaneous irradiation of the energetic H-n(+) promoted the desorption of the formed passivated Ga-H bonds.

    DOI: 10.1143/JJAP.51.111002

  251. Correlation between device performance and defects in GaInN-based solar cells 査読有り

    Mori, Mikiko; Kondo, Shinichiro; Yamamoto, Shota; Nakao, Tatsuro; Fujii, Takahiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   5 巻 ( 8 ) 頁: 082301/1-082301/3   2012年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We investigated the correlation between the device performance and defects, such as V-shaped pits and threading dislocations, in GaInN-based solar cells. To realize high-performance GaInN-based solar cells with a high open-circuit voltage and fill factor, it is essential to realize a low pit density of less than 10(7) cm(-2). In this study, we were unable to observe clear evidence of any effect of the threading dislocation density in the GaN underlying layer.

    DOI: 10.1143/APEX.5.082301

  252. MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate 査読有り

    Yasuhiro Isobe, Hiromichi Ikki, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki,Takayuki Sugiyama, Hiroshi Amano, Mamoru Imade, Yusuke Mori

    Journal of Crystal Growth   351 巻 ( 1 ) 頁: 126-130   2012年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We investigated unintentionally doped nonpolar a- and m-plane GaN layers grown by metalorganic vapor phase epitaxy under several sets of conditions on freestanding a- and m-plane GaN substrates. Oxygen contamination in a-plane GaN is greatly reduced by increasing the V/III ratio during growth. As a result, a high-resistivity GaN buffer layer for an AlGaN/GaN heterostructure field-effect transistor was realized.

  253. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates 査読有り

    Mitsunari, Tadashi; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physca Status Solidi c   9 巻 ( 3-4 ) 頁: 480-483   2012年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We proposed an in-situ void formation technique using high-temp. AlN growth on GaN stripes in order to reduce residual stress. Microcracks were obsd. during the growth of AlN; the GaN stripes then sublimated from the microcracks while keeping the AlN shell, resulting in void formation in the AlN shell structure. After GaN regrowth on this AlN shell structure, we successfully coalesced the GaN stripes to form a smooth, thick GaN layer having voids at the GaN/substrate interface. Raman spectroscopy confirmed that the residual tensile stress was decreased. The thermal stress decreased owing to the sepn. between the GaN layer and a foreign substrate.

    DOI: 10.1002/pssc.201100502

  254. Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate 査読有り

    T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, Y. Mori

    Physica Status Solidi c   9 巻 ( 3-4 ) 頁: 875-878   2012年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We measured drain bias stress effects and current collapse in AlGaN/ GaN heterostructure field-effect transistors (HFETs) on a-plane and c-plane GaN substrates. An a-plane AlGaN/GaN HFET (a-HFET) shows small current collapse with a threshold voltage (Vth = -1.8 V). On the other hand, a c-plane HFET (c-HFET) with the same barrier thickness (20 nm) shows a small current collapse, although Vth was neg. large (Vth = -4 V). Current collapse in a-HFET was not large compared with that in conventional c-HFET on GaN. A c-HFET on sapphire was also measured. The current collapses in HFETs on sapphire were larger than that in HFETs on a GaN substrate. The current collapses in the thin-barrier c-HFET (Vth = -1.8 V) were particularly large. Therefore, an a-plane device is promising for a small or pos. Vth with small current collapse.

    DOI: 10.1002/pssc.201100397

  255. Laser lift-off of AlN/sapphire for UV light-emitting diodes 査読有り

    Aoshima, Hiroki; Takeda, Kenichiro; Takehara, Kosuke; Ito, Shun; Mori, Mikiko; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Physica Status Solidi C   9 巻 ( 3-4 ) 頁: 753-756   2012年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We report on laser lift-off (LLO) of AlN/sapphire for UV light-emitting diodes (LEDs). Underfill between chip and submount is a key factor for the successful LLO of AlN/sapphire. We fabricated thin-film-flip-chip UV LEDs with a peak wavelength of 343 nm using the LLO. Moreover surface texturing was carried out on the exfoliated AlN surface. The light output power from the UV LED after the LLO and the surface texture at exfoliated surface is 1.7 times higher than that before the LLO at 20 mA.

    DOI: 10.1002/pssc.201100491

  256. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE 査読有り

    Tabata, Takuya; Paek, Jihyun; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi c   9 巻 ( 3-4 ) 頁: 646-649   2012年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We have grown InGaN nanowires (NWs) on a (111)Si substrate directly by radio-frequency plasma-assisted mol. beam epitaxy (RF-MBE), and investigated their In compositional distribution by energy dispersive x-ray spectroscopy (EDX). The In compn. line profiles of InGaN NWs measured by EDX are different at each position in the InGaN NWs, and In is most easily incorporated into the top of NWs. The In compn. at the top of the NWs depends on the growth temp. and the In flux ratio. However, the In compns. at other positions is not dependent on these factors. Thus, these results might be due to the limited diffusion of In atoms from the top of the NWs towards the NWs/Si interface.

    DOI: 10.1002/pssc.201100446

  257. Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors 査読有り

    Kazuya Ikeda, Yasuhiro Isobe, Hiromichi Ikki, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

    Physica Status Solidi c   9 巻 ( 3-4 ) 頁: 942-944   2012年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We report on the electrical properties of AlInN/GaInN
    heterostructures fabricated with InN molar fractions of 0 to 0.6 in the GaInN layer. High-density two-dimensional electron gases are formed near the interfaces of AlInN/AlN/GaInN at InN molar fractions of 0.3 and 0.6.
    The Al0.82In0.18N/AlN/Ga0.4In0.6N/GaN heterostructure
    field-effect transistors exhibited static characteristics.
    The maximum drain-source current reached a value of
    0.26 A/mm.

    DOI: 10.1002/pssc.201100492

  258. High carrier concentration in high Al-composition AlGaN-channel HEMTs 査読有り

    Hashimoto, Shin; Akita, Katsushi; Yamamoto, Yoshiyuki; Ueno, Masaki; Nakamura, Takao; Yafune, Norimasa; Sakuno, Keiichi; Tokuda, Hirokuni; Kuzuhara, Masaaki; Takeda, Kenichiro; Iwaya, Motoaki; Amano, Hiroshi

      9 巻 ( 2 ) 頁: 373-376   2012年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    High Al-compn. (Al = 51%) and low Al-compn. (Al = 20%) AlGaN-channel high-electron-mobility transistors (HEMTs) on AlN layers with very high carrier concn. were demonstrated. In two types of HEMTs, 2-dimensional electron gases (2DEG) were clearly obsd. and peak carrier concn. and sheet carrier concn. were approx. 1020 cm-3 and higher than 2 × 1013 cm-2, resp. From the X-ray diffraction (XRD) measurements, it was obsd. that the AlGaN channel layers on the AlN layers were partially relaxed and the degree of relaxation decreased with increasing Al-compn. of AlGaN channel layers. Therefore the misfit dislocations in the high Al-compn. HEMTs were considered to be lower than those in the low Al-compn. HEMTs. Furthermore, it was revealed that very high Al-compn. of AlGaN barrier layers can be grown coherently on the AlGaN channel layers in consequence of the partly relaxation of the AlGaN channel layers, which of lattice consts. of a-axis were smaller than that of fully relaxed AlGaN channel layers. Therefore very high carrier concn. of 2DEG can be obtained in spite of the high Al-compn. of AlGaN channel layers. We considered that this high carrier concn. of 2DEG was necessary to demonstrate high Al-compn. AlGaN-channel HEMTs.

    DOI: 10.1002/pssc.201100289

  259. 窒化物ワイドギャップ半導体の現状と展望  ―バルクGaN単結晶成長技術開発の観点から― 査読有り

    天野 浩

    応用物理   81 巻 ( 6 ) 頁: 455-463   2012年6月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:研究論文(学術雑誌)  

    GaNのバルク成長の歴史と展望を概説した。

  260. Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates 査読有り

    Kouta Yagi, Mitsuru Kaga, Kouji Yamashita, Kenichirou Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   51 巻   頁: 051001   2012年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We have demonstrated crack-free 30-pair-AlN/GaN distributed Bragg reflectors (DBRs) grown on AlN templates for the first time. A reasonably high reflectivity of 97.5% was obtained. X-ray diffraction measurements revealed that the AlN templates cause compressive stress in DBRs. At the same time, the AlN/GaN DBRs were found to relax to average AlGaN alloys with AlN mole fractions determined by the thickness ratio of the AlN layer to one pair of AlN and GaN in DBRs regardless of the underlying template, AlN or GaN.

    DOI: 10.1143/JJAP.51.051001

  261. Growth of GaN and AlGaN on (100) beta-Ga2O3 substrates 査読有り

    Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

      9 巻 ( 3-4 ) 頁: 519-522   2012年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The crystalline quality of GaN and Al0.08Ga0.92N epitaxial layers on (100) β-Ga2O3 substrates was significantly improved by the facet-controlled growth method. The facets were controlled by changing the nitrogen ambient thermal annealing temperature. We demonstrated the highcrystalline-quality GaN and Al0.08Ga0.92N on β-Ga2O3 substrates, which were comparable to GaN and AlGaN on sapphire substrates using low-temperature buffer layers.
    This method is useful for the fabrication of verticaltype ultraviolet (UV) light-emitting diodes (LEDs) on β-Ga2O3 substrates.

    DOI: 10.1002/pssc.201100499

  262. Properties of nitride-based photovoltaic cells under concentrated light illumination 査読有り

    Shota Yamamoto, Mikiko Mori, Yosuke Kuwahara, Takahiro Fujii, Tatsuo Nakao, Shinichiro Kondo, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

    Physica Status Solidi Rapid Research Letter   6 巻 ( 4 ) 頁: 145-147   2012年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We investigated the properties of nitride-based solar cells under concentrated light illumination from 1 to 200 suns. The conversion efficiency of our solar cells increased with increasing concentration up to 200 suns. The short-circuit cur- rent density, open-circuit voltage, fill factor, and conversion efficiency were 510 mA/cm2, 1.9 V, 70%, and 3.4%, respectively, under an air mass filter of 1.5G at 200 suns and room temperature. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

    DOI: DOI: 10.1002/pssr.201206038

  263. Development of AlN/diamond heterojunction field effect transistors 査読有り

    Masataka Imura, Ryoma Hayakawa, Hirotaka Ohsato, Eiichiro Watanabe, Daiju Tsuya, Takahiro Nagata, Meiyong Liao, Yasuo Koide, Jun-ichi Yamamoto, Kazuhito Ban, Motoaki Iwaya, Hiroshi Amano

    Diamond and Related Materials   24 巻   頁: 206-209   2012年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    AlN/diamond heterojunction field effect transistors with p-channel and normally-on depletion mode are developed, and the device performance is improved by reducing the contact resistances at source and drain contacts reported previously. The heterojunction structure is constructed from a c-axis-oriented AlN epilayer grown on oxygen-terminated (111) diamond substrate by metal-organic vapor phase epitaxy at temperatures as high as 1250 °C. Thermal treatment in the mixed hydrogen (H2) and ammonia atmosphere just before AlN growth improves the AlN adhesion to diamond surface. In addition, this treatment simultaneously produces a much larger surface hole-carrier density than that obtained by conventional H2-plasma treatment. X-ray photoelectron spectroscopy reveals the existence of carbon-nitrogen bonds at the diamond surface, and these may be responsible for such a large hole density. These results are promising in relation to new opportunities for developing diamond-based power electronic devices.

  264. Indium-Tin Oxide/Al eflective Electrodes for Ultraviolet Light-Emitting Diodes 査読有り

    Kosuke Takehara, Kenichiro Takeda, Shun Ito, Hiroki Aoshima, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Japanese Journal of Applied Physics   51 巻   頁: 042101   2012年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.51.042101

  265. Indium-Tin oxide/Al reflective electrodes for ultraviolet light-emitting diodes 査読有り

    Takehara, Kosuke; Takeda, Kenichiro; Ito, Shun; Aoshima, Hiroki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

      51 巻 ( 4 ) 頁: 042101/1-042101/4   2012年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We investigated indium-tin oxide (ITO)/Al reflective electrodes for improving the light extraction efficiency of UV light-emitting diodes (LEDs). The ITO layer showed high transparency in the UV region upon optimization of the thickness and annealing temperature. As a result, the ITO/Al electrode exhibited both high reflectivity in the UV region and good contact characteristics simultaneously. Using this electrode, we succeeded in improving the light output power of a 350 nm UV-A LED.

    DOI: 10.1143/JJAP.51.042101

  266. Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate 査読有り

    Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Nobuhiko Sawaki

    Physica Status Solidi b   249 巻   頁: 468-471   2012年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: DOI: 10.1002/pssb.201100445

  267. Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers 査読有り

    Hashimoto Shin; Akita Katsushi; Yamamoto Yoshiyuki, HIroshi Amano

    Physica Status Solidi a   209 巻   頁: 501-504   2012年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: DOI: 10.1002/pssa.201100379

  268. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes 査読有り

    Tetsuhiko Inazu, Shinya Fukahori, Cyril Pernot, Myung Hee Kim, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Masahito Yamaguchi, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   50 巻   頁: 122101   2011年12月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with aluminum reflective electrodes deposited to cover both p- and n-mesh contact electrodes have been fabricated. A 1.55-fold increase in light extraction efficiency has been demonstrated. Despite their reduced contact area, the LEDs exhibited only a slight increase in forward voltage of 0.45 V at 20 mA. Also, their 50% lifetime was estimated to be about 10,000 h at 20 mA DC at room temperature by extrapolation. Owing to the reflective electrodes, a 288 nm LED with external quantum efficiency as high as 5.4% was achieved. The light output power was 4.6 mW at 20 mA.

    DOI: 10.1143/JJAP.50.122101

  269. Dependence of Resonance Energy Transfer on Exciton Dimensionality 査読有り

    Jan Junis Rindermann, Galia Pozina, Bo Monemar, Lars Hultman, Hiroshi Amano, and Pavlos G. Lagoudakis

    Physical Review Letters   107 巻   頁: 236805   2011年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We investigate the dependence of resonance energy transfer from Wannier-Mott excitons to an organic overlayer on exciton dimensionality. We exploit the excitonic potential disorder in a single quantum well to tune the balance between localized and free excitons by scaling the Boltzmann distribution of excitons through temperature. Theoretical calculations predict the experimentally observed temperature dependence of resonance energy transfer and allow us to quantify the contribution of localized and free excitons. We show that free excitons can undergo resonance energy transfer with an order of magnitude higher rate compared to localized excitons, emphasizing the potential of hybrid optoelectronic devices utilizing resonance energy transfer as a means to overcome charge transfer related limitations.

  270. Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate 査読有り

    Applied Physics Express   4 巻   頁: 101001   2011年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    サファイアr面基板上に成長した窒化物太陽光発電素子に関する初めての論文。

    DOI: 10.1143/APEX.4.101001

  271. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates 査読有り

    Myunghee Kim, Takehiko Fujita, Shinya Fukahori, Tetsuhiko Inazu, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Masahito Yamaguchi, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Applie Physics Express   4 巻   頁: 092102   2011年9月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/APEX.4.092102

  272. AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage 査読有り

    Yoshinori Oshimura, Takayuki Sugiyama, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Japanese Journal of Applied Physics   50 巻   頁: 084102   2011年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    lGaN/GaN heterostructure field-effect transistors (HFETs) were fabricated by metalorganic vapor phase epitaxy (MOPVE) on c-plane Fe-doped GaN (GaN:Fe) substrates with different growth conditions of GaN buffer layers. The GaN buffer layers were grown at a V/III ratio of 272 at 300 Torr to realize highly resistive GaN buffer layers with automatic carbon doping. HFETs with carbon-doped GaN buffer layers showed the best characteristics among all the samples in this study. The carbon concentration was 5×1016 cm-3. In the sample with a gate-drain length of 50 µm, the off-state breakdown voltage was 2 kV or higher and the on-resistance was 18.5 mΩ·cm2. We found that the carbon-doped GaN buffer layers are necessary for high breakdown voltages even using semi-insulating GaN:Fe substrates.

  273. Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN 査読有り

    S. Khromov, C. G. Hemmingsson, H. Amano, B. Monemar, L. Hultman, and G. Pozina

    Pysical Review   B84 巻   頁: 075324   2011年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1103/PhysRevB.84.075324

  274. Reduction in threshold current density of 355 nm UV laser diodes 査読有り

    Nagata, Kengo; Takeda, Kenichiro; Nonaka, Kentaro; Ichikawa, Tomoki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Yoshida, Harumasa; et al

    Physica Status Solidi C   8 巻 ( 5 ) 頁: 1564-1568   2011年8月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We have investigated the characteristics of 355 nm UV laser diodes. Two laser diode structures were prepd. on a grooved AlGaN template as well as on a flat AlGaN template. The threading dislocation densities on the grooved and flat AlGaN were 2.5 × 108 cm-2 and 6.5 × 109 cm-2, resp. The threshold c.d. of the laser diode on the grooved AlGaN was 6 kA/cm2, while no lasing was obsd. from the laser diode on the flat AlGaN. We also estd. the internal quantum efficiency as well as the injection efficiency in the UV laser diode structures by considering internal quantum efficiency of both optical and elec. excitation. At a carrier d. of 1.2 × 1019 cm-3, the internal quantum efficiency of the laser diode structure on the grooved AlGaN was about 50%. This is twice that of the laser diode on the flat AlGaN. At the same time, the internal quantum efficiency estd. from the optical excitation also reached about 50%, even at a carrier d. of 3 × 1018 cm-3. This implies that the injection efficiency in our UV laser diode structure was only 25%. Improving the injection efficiency should be effective for significantly reducing the threshold c.d.

  275. Transparent electrode for UV light-emitting-diodes 査読有り

    Takehara, Kosuke; Takeda, Kenichiro; Nagata, Kengo; Sakurai, Hisashi; Ito, Shun; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁: 2375-2377   2011年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We have investigated the transparent electrodes using indium tin oxide (ITO) for UV light-emitting diodes (LEDs). The carrier concn. of ITO was increased from 1.1 × 1018 to 1.5 × 1021 cm-3 after annealing under N2 ambient at 600 °C. The fundamental absorption edge was also shifted to a shorter wavelength owing to the increase in carrier concn., through the so-called the Burstein-Moss effect. The annealed ITO forms an ohmic contact with p-GaN with a specific contact resistance of 1.2 × 10-3 Ωcm2. The light output power of a 350 nm LED with the annealed ITO contact is 1.2 times higher than that with a conventional Ni/Au contact.

  276. Achieving high-growth-rate in GaN homoepitaxy using high-density nitrogen radical source 査読有り

    Kawai, Yohjiro; Chen, Shang; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Kondo, Hiroki; Hirmatsu, Mineo; Kano, Hiroyuki; Yamakawa, Koji; Den, Shoji; et al

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁: 2089-2091   2011年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The key issue in GaN growth by radio-frequency plasma-assisted mol. beam epitaxy is the low growth rate compared with that obtained using an ammonia source. To reduce the processing time and to improve the cryst. quality of the epilayer, a high-d. radical source (HDRS) with high stability has been developed. The growth rate of the GaN epilayer was improved using the HDRS rather than a conventional radical source. During the growth, a sharp streak pattern obtained by RHEED was maintained. An atomically smooth surface was confirmed by at. force microscopy observation.

  277. AlGaN/GaInN/GaN heterostructure field-effect transistor 査読有り

    Ikki, Hiromichi; Isobe, Yasuhiro; Iida, Daisuke; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Bandoh, Akira; Udagawa, Takashi

    Physica Status Solidi A   208 巻 ( 7 ) 頁: 1614-1616   2011年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We report on the elec. properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier d. of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 × 1013 cm-2 at an InN molar fraction of 0.60. The Al0.30Ga0.70N/Ga0.40In0.60N heterostructure exhibited static field-effect transistor (FET) characteristics.

  278. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes 査読有り

    Pernot, Cyril; Fukahori, Shinya; Inazu, Tetsuhiko; Fujita, Takehiko; Kim, Myunghee; Nagasawa, Yosuke; Hirano, Akira; Ippommatsu, Masamichi; Iwaya, Motoaki; Kamiyama, Satoshi, Amano Hiroshi; et al

    Physica Status Solidi A:   208 巻 ( 7 ) 頁: 1594-1596   2011年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We report on the fabrication and characterization of high efficiency UV light emitting diodes (LEDs) with emission wavelength ranging from 255 to 355 nm. Epi-layers of UV LEDs were grown on AlGaN templates with sapphire substrates. Flip-chip configuration without removing sapphire is used for characterization of the UV LEDs. External quantum efficiencies (EQEs) over 3% were obtained for all the investigated wavelengths with max. value reaching 5.1% for 280 nm LED. Under RT DC operation at a current of 500 mA, output powers of 38, 77, and 64 mW were measured for 257, 280, and 354 nm, resp. By using enhanced light extn. technologies, such as, moth-eye structure on the back side of the sapphire substrate, we expect to improve these values by up to 50%.

  279. Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate 査読有り

    Sugiyama, Takayuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Oshimura, Yoshinori; Iida, Daisuke; Iwaya, Motoaki; Akasaki, Isamu

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁: 2424-2426   2011年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We measured the drain bias stress effects in normally off mode AlGaN/GaN (JHFETs) with a p-GaN gate, whose AlGaN barrier was exposed to air by dry etching. A large current collapse and a memory effect decreased the drain current (IDS). IDS of an unpassivated sample became the off leakage level of normally off mode JHFETs at a drain stress bias of 15 V. On the other hand, IDS in SiN-passivated JHFETs decreased at a slow rate upon applying drain stress bias. The decrease in IDS in SiN-passivated JHFETs was almost the same as that in asgrown HFETs. These drain stress and memory effects were perfectly deletable by light exposure, and were rewritable similarly in an EPROM.

  280. GaInN-based solar cells using GaInN/GaInN superlattices 査読有り

    Fujii, Takahiro; Kuwahara, Yousuke; Iida, Daisuke; Fujiyama, Yasuhara; Morita, Yoshiki; Sugiyama, Toru; Isobe, Yasuhiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; et al

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁: 2463-2465   2011年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We report on the fabrication of GaInN-based solar cells using GaInN/GaInN superlattices as active layers and also as underlying layers beneath the active layers. We obtained pit-free surfaces, even with a high InN molar fraction, using the superlattices. As a result, the max. external and internal quantum efficiencies reached 60%, and 88%, resp. The open-circuit voltage of the soalr cells was 1.77 V, the short-circuit c.d. was 3.08 mA/cm2, and the fill factor was 70.3%. A conversion efficiency of 2.46% was achieved at room temp. under simulared 1.5 sun × AM1.5G illumination using a solar simulator.

  281. Injection efficiency in AlGaN-based UV laser diodes 査読有り

    Nagata, Kengo; Takeda, Kenichiro; Oshimura, Yoshinori; Takehara, Kosuke; Aoshima, Hiroki; Ito, Shun; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; et al

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁: 2384-2386   2011年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We evaluated AlGaN-based 355 nm UV laser diodes prepd. under two different Mg activation conditions. The annealing processes for Mg activation in p-layers were carried out under N2 or O2 ambient to investigate the effect of the ambient gas on the laser characteristics. The threshold current densities and operating voltages of the UV laser diodes were improved by annealing under O2 compared with those under N2. We then estd. the injection efficiencies of the laser diode structures by considering the internal quantum efficiencies of optical excitation and elec. excitation. The internal quantum efficiency of the elec. excited spontaneous emission from the laser structure annealed under O2 reached 50% at a carrier d. of 7.0 × 1018 cm-3, while the structure annealed under N2 required a 1.8-fold higher carrier d. of 1.2 × 1019 cm-3 to reach the same internal quantum efficiency. In addn., the internal quantum efficiency estd. from optical excitation reached 50% even at a carrier d. of 3.0 × 1018 cm-3. This implies that the injection efficiencies in the UV laser diode structures annealed under N2 and O2 were 25% and 45%, resp. Mg activation by O2 annealing is effective for increasing the injection efficiency.

  282. Low leakage current in AlGaN/GaN HFETs with preflow of Mg source before growth of u-GaN buffer layer 査読有り

    Oshimura, Yoshinori; Sugiyama, Takayuki; Takeda, Kenichiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Physica Status Solidi A   208 巻 ( 7 ) 頁: 1607-1610   2011年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    AlGaN/GaN heterostructure field-effect transistors were grown by metalorg. vapor phase epitaxy on Fe-doped GaN substrates with a preflow of the Mg source. We realized a low drain leakage current, 1.05 μA/mm, at VDS = 20 V and VGS = -5 V with LGD = 3 μm. This leakage current was one order of magnitude lower than that obtained without a preflow of the Mg source. The breakdown voltage was over 250 V with LGD = 10 μm. The on resistance was estd. to be 3.6 mΩ cm2. No significant redistribution or memory effect of Mg was obsd. by secondary ion mass spectroscopy measurement.

  283. Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate 査読有り

    Murase, Tasuku; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁: 2160-2162   2011年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A smooth laser structure on (1-101) GaN microstripes was successfully fabricated on a patterned (100) 8°-off Si substrate. The sample has a high internal quantum efficiency (IQE) compared with blue LEDs on a sapphire substrate. The high-d. excitation PL spectrum obsd. from the cross section of the sample shows marked narrowing, and the integral PL intensity also shows a steep increase. These results indicate the onset of stimulated emission from an InGaN-based multi quantum well (MQW) active layer on (1-101) GaN (100) Si. To the best of our knowledge, this is the first report of the observation of a stimulated emission from a (1-101) MQW on a Si substrate. We succeeded in fabricating and verifying the high-quality laser structure on semipolar (1-101) GaN on a Si substrate.

  284. Optimization of initial MOVPE growth of non-polar m- and a-plane GAN on Na flux grown LPE-GaN substrates 査読有り

    Isobe, Yasuhiro; Iida, Daisuke; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Imade, Mamoru; Kitaoka, Yasuo; et al

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁: 2095-2097   2011年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We optimized the initial GaN growths of nonpolar m- and a-plane GaN grown on liq. phase epitaxy (LPE-) GaN substrates. Such nonpolar LPE-GaN substrates were produced by cutting slices from c-plane LPE-GaN bulk single crystals grown by the Na-flux method. We investigated the qualities of epitaxially grown GaN layers on the LPE-GaN substrates, with different polishing methods, which are chem. mech. polishing and plasma dry etch polishing. We found that the cryst. quality of epitaxial GaN on m-plane GaN is very sensitive to the surface polishing even the minute unevenness in GaN substrate. Our expts. also indicated that a low initial growth rate was necessary to obtain high-cryst.-quality epitaxial m-plane GaN. In contrast, high-cryst.-quality a-plane GaN was obtained even with a high initial growth rate, indicating that the cryst. quality of a-plane GaN is not sensitive to surface roughness.

  285. Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes 査読有り

    Tanikawa, Tomoyuki; Murase, Tasuku; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi C   8 巻 ( 7-8 ) 頁: 2038-2040   2011年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We demonstrated the effects of growth conditions such as growth pressure and growth temp. during the selective growth of InGaN/GaN multiple quantum wells (MQWs) on semipolar GaN microstripes on Si substrates. Grown layers exhibited the ridge growth, which indicates the thickness fluctuation, owing to the source supply from the apexes of the GaN microstructure. Ridge growth was suppressed by increasing growth pressure and decreasing growth temp. Cathode luminescence (CL) anal. showed uniform luminescence. As a result, high pressure and low temp. are suitable for obtaining uniform heterostructures in the selective growth of InGaN/GaN MQWs on GaN microstripes.

  286. Nonpolar a-plane AlGaN/GaN heterostructure field-effect transistors grown on freestanding GaN substrate 査読有り

    Isobe, Yasuhiro; Ikki, Hiromichi; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Sugiyama, Takayuki; Amano, Hiroshi; Imade, Mamoru; et al

    Applied Physics Express   4 巻 ( 6 ) 頁: 064102/1-064102/3   2011年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We fabricated and characterized nonpolar a-plane AlGaN/GaN heterostructure field-effect transistors (HFETs) grown on an a-plane freestanding GaN substrate. By optimizing the growth conditions, the unintentionally doped oxygen concn. was much reduced in the a-plane GaN buffer layer. As a result, the low leakage current in the buffer layer was realized without doping of deep acceptors, such as Fe and C, by which an impurity-contamination-free channel layer can be successfully grown.

  287. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1-101) semipolar GaN 査読有り

    Wu, Z. H.; Tanikawa, T.; Murase, T.; Fang, Y.-Y.; Chen, C. Q.; Honda, Y.; Yamaguchi, M.; Amano, H.; Sawaki, N.

    Applied Physics Letters   98 巻 ( 5 ) 頁: 051902/1-051902/3   2011年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The authors have studied the structural properties and relaxation phenomenon of InGaN multiple quantum wells (QWs) on (1.hivin.101) semipolar GaN templates grown on patterned (001) Si substrates by selective area growth technique. Studies by TEM and x-ray diffraction reciprocal space mapping reveal that QWs emitting light at 540 nm experience significant strain relaxation along the in-plane [1.hivin.10.hivin.2] direction by the generation of an array of basal stacking faults (BSF). The generation of BSFs in 540 nm QWs could be an important factor limiting its luminescence efficiency.

  288. Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes 査読有り

    Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi A   208 巻 ( 5 ) 頁: 1175-1178   2011年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We investigated the InGaN/GaN multiple quantum well (MQW) thickness and cathode luminescence (CL) distribution on nonpolar (11-20)GaN, semipolar (11-22)GaN, and (1-101)GaN microstripes grown by selective metal-org. vapor phase epitaxy (MOVPE) on patterned Si substrates. All samples exhibited ridge growth. To clarify the effect of vapor phase diffusion, the two-dimensional diffusion equation was solved. The results were in good agreement with the thickness distribution on the (11-20)GaN stripe when we assumed D/k0 to be 1 μm. However, the results were not in agreement for the semipolar case. On the semipolar face, the surface migration length might be greater, thus increasing the thickness nonuniformity. CL anal. indicated a uniform indium compn. on the (11-20) and (11-22) faces. On the (1-101)GaN stripe, the indium compn. decreased near the (0001) edge. Excess Ga is considered to affect the compositional nonuniformity on the (1-101) facet.

  289. Evidence for moving of threading dislocations during the VPE growth in GaN thin layers 査読有り

    Kuwano, Noriyuki; Miyake, Hideto; Hiramatsu, Kazumasa; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C   8 巻 ( 5 ) 頁: 1487-1490.   2011年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Cross-sectional transmission electron microscope (TEM) observation was performed in detail to analyze the morphol. of threading dislocations (TDs) in GaN thin layers with various thicknesses. The GaN layers were overgrown on an Al0.28Ga0.72N layer by the metal-org. vapor-phase epitaxy (MOVPE) method. In a GaN layer about 50 nm in thickness, TDs running up in the AlGaN layer pass into the GaN layer and most of them reach the top surface without bending. In thicker GaN layers, on the other hand, many of TDs form a hairpin-configuration on or above the interface of GaN and AlGaN to be annihilated. This difference in morphol. of TDs indicates that the TDs have moved down inside the GaN layer. Since the formation of hairpins is attributed to a stress-relief, there should be an extra half-plane between the paired TDs. Therefore, the movement of TDs should be of "climb motion". Another example of possible TD movement inside a GaN layer is also described. It is emphasized that the possibility of TD-movements inside the thin film crystal during the growth should be taken into account in anal. of thin-layer growth through the behavior of TDs.

  290. Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method 査読有り

    Isobe, Yasuhiro; Iida, Daisuke; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Imade, Mamoru; Kitaoka, Yasuo; et al

    Physica Status Solidi A   208 巻 ( 5 ) 頁: 1191-1194   2011年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal m-plane free-standing GaN substrates prepd. by the Na flux method. The miscut angle in the LPE-GaN substrate has a great influence on the surface morphol. and cryst. quality of epitaxial GaN and AlGaN films. In particular, AlGaN/GaN on a 4° miscut-angle LPE-GaN substrate shows large step bunching, small-miscut-angle LPE GaN substrate is essential for fabricating on FET structure with a flat surface.

  291. Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells 査読有り

    Ban, Kazuhito; Yamamoto, Jun-ichi; Takeda, Kenichiro; Ide, Kimiyasu; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   4 巻 ( 5 ) 頁: 052101/1-052101/3   2011年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We analyze the internal quantum efficiency (IQE) of whole-compn.-range AlGaN multiquantum wells (MQWs) on AlGaN with various dislocation densities (DDs) by excitation-d.-dependent photoluminescence measurement. IQEs of deep UV/UV (DUV/UV) MQWs are strongly dependent on the DD. IQE with an excess carrier d. of 1 × 1018 cm-3 changes from 4 to 64% when the DD changes from 6 × 109 to 2 × 108 cm-2. This trend is almost the same for DUV/UV MQWs with emission wavelength ranging from 230 to 350 nm. Thus, the redn. of the DD is very important for the realization of a high-IQE DUV/UV active layer.

  292. Microstructural analysis of thick AlGaN epilayers using Mg-doped AlN underlying layer 査読有り

    Nonaka, K.; Asai, T.; Ban, K.; Yamamoto, J.; Iwaya, M.; Takeuchi, T.; Kamiyama, S.; Akasaki, I.; Amano, H.; Wu, Z. H.

    Physica Status Solidi C   8 巻 ( 5 ) 頁: 1467-1470   2011年5月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    This paper reports the microstructural anal. of 20-μm-thick Al0.5Ga0.5N with improved cryst. quality owing to the use of a Mg-doped AlN underlying layer. The threading dislocation d. in 20-μm-thick Al0.5Ga0.5N on Mg-doped AlN was 8.6 × 108 cm-2, which is about one-fifth lower than that of Al0.5Ga0.5N on an undoped AlN underlying layer. The microstructural anal. was carried out to clarify dislocation behaviors in the Al0.5Ga0.5N layer on the Mg-doped AlN underlying layer.

  293. Freestanding highly crystalline single crystal AlN substrates grown by a novel closed sublimation method 査読有り

    Yamakawa, Masayasu; Murata, Kazuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Azuma, Masanobu

    Applied Physics Express   4 巻 ( 4 ) 頁: 045503/1-045503/3   2011年4月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We fabricated thick freestanding AlN films by a novel close-spaced sublimation method. The spacing between a sintered AlN polycrystal and a SiC substrate is 1 mm. A Ta ring was used to control the spacing between the AlN polycrystal and the SiC substrate. In addn., a special AlN adhesive was also used to fill in the gap between the AlN polycrystal, the Ta ring, and the SiC substrate. By a combination of these techniques, an AlN growth rate as high as 600 μm/h was achieved. A freestanding AlN layer was obtained by the sublimation of the SiC substrate during the AlN growth.

  294. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy 査読有り

    Wu, Z. H.; Kawai, Y.; Fang, Y.-Y.; Chen, C. Q.; Kondo, H.; Hori, M.; Honda, Y.; Yamaguchi, M.; Amano, H.

    Applied Physics Letters   98 巻 ( 14 ) 頁: 141905/1-141905/3   2011年3月

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    担当区分:筆頭著者   記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Structural properties of thick InGaN layers grown on GaN by plasma-assisted mol. beam epitaxy using two growth rates of 1.0 and 3.6 Å/s have been investigated. A highly regular superlattice (SL) structure formed spontaneously in the film grown at 3.6 Å/s but not in the film grown at 1.0 Å/s. The faster grown film also exhibited superior structural quality, which could be due to the surface roughness suppression caused by kinetic limitation, and the inhibition of the Frank-Read dislocation generation mechanism within the spontaneously formed SL structure.

  295. Demonstration of diamond field effect transistors by AlN/diamond heterostructure 査読有り

    Imura, Masataka; Hayakawa, Ryoma; Watanabe, Ei-Ichiro; Liao, Mei-Yong; Koide, Yasuo; Amano, Hiroshi

    Physica Status Solidi RRL:   5 巻 ( 3 ) 頁: 125-127.   2011年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    This is the first report on an AlN/diamond heterojunction field effect transistor (HFET). The AlN epilayer is grown on oxygen-terminated (111) diamond substrates using metalorg. vapor phase epitaxy at a temp. as high as 1240 °C. The transistor and gate capacitance-voltage characteristics indicate that the HFET behaves as a p-channel FET with a normally-on depletion mode. The HFET channel is located at the AlN/diamond interface, and holes are accumulated in diamond close to the interface. The development of the AlN/diamond HFET creates a new possibility for diamond-based power electronics.

  296. Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency 査読有り

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Amano, H.; Pearton, S. J.; Lee, I.-H.; Sun, Q.; Han, J.; Karpov, S. Yu.

    Applied Physics Letters   98 巻 ( 7 ) 頁: 072104/1-072104/3   2011年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The correlation of integrated microcathodoluminescence efficiency with cryst. quality and deep trap d. of nonpolar GaN films grown by metal org. CVD on semi-insulating 6H-m-SiC or r-sapphire is analyzed. The results suggest a strong influence of nonradiative recombination centers whose concn. decreases with decreased d. of extended defects. Electron traps with energy levels at Ec-0.6 eV and which pin the Fermi level in films with high defect d. are the most likely candidates for the decrease in light emission efficiency in nonpolar GaN.

  297. GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate 査読有り

    Kuwahara, Yousuke; Fujii, Takahiro; Sugiyama, Toru; Iida, Daisuke; Isobe, Yasuhiro; Fujiyama, Yasuharu; Morita, Yoshiki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi, Amano Hiroshi; et al

    Applied Physics Express   4 巻 ( 2 ) 頁: 021001/1-021001/3   2011年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    High-performance GaInN-based solar cells with high open-circuit voltage, high short-circuit c.d., and good fill factor have been obtained using a combination of two different GaInN superlattice structures. The GaInN barrier thicknesses (3 and 0.6 nm) in both superlattice structures were optimized, resulting in a thick GaInN-based active layer with a low pit d. in the device. The conversion efficiency is 2.5% under a solar simulator of air-mass 1.5G and an irradn. intensity of 155 mW/cm2.

  298. Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer 査読有り

    Takeda, Kenichiro; Nagata, Kengo; Ichikawa, Tomoki; Nonaka, Kentaro; Ogiso, Yuji; Oshimura, Yoshinori; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; et al

    Physica Status Solidi C   8 巻 ( 2 ) 頁: 464-466   2011年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We fabricated and evaluated GaN/AlGaN multi-quantum wells (MQWs) and UV laser diodes (UV LDs) on high and low dislocation d. underlying layers by epitaxial lateral overgrowth (ELO) method. We analyzed the internal quantum efficiency (IQE) vs. carrier concn. characteristics quant. by excitation intensity dependent photoluminescence method. The IQE of the MQWs on the ELO AlGaN is 75% when the carrier d. is 1 × 1019 cm-3. We demonstrated the UV LD on the ELO AlGaN. However, the UV LD on flat AlGaN did not operate. Also, we investigated the internal loss (α1) and the IQE multiplied the injection efficiency by changing the reflectivity of the facets. The results showed that the internal loss is 6 cm-1, and the IQE multiplied by the injection efficiency is 18%

  299. Drastic reduction of dislocation density in semipolar (11-.22) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy 査読有り

    Murase, Tasuku; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Sawaki, Nobuhiko

    Japanese Journal of Applied Physics   50 巻 ( 1 ) 頁: 01AD04/1-01AD04/3.   2011年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A drastic redn. of the dislocation d. in a semipolar (11.hivin.22) GaN stripe on a patterned Si substrate was achieved by the 2-step selective growth of a GaN stripe. After depositing a SiO2 mask on the (11.hivin.22) and (000.hivin.1) faces of a GaN stripe grown on a (113) Si substrate, GaN was regrown only on the (.hivin.1.hivin.122) face. The dislocation d. estd. from the dark-spot d. in a cathodoluminescence (CL) image greatly decreased from 4.0 × 108 to 1.0 × 105/cm2 in the regrowth region. A TEM image also verified that there were no dislocations at the regrowth interfaces.

  300. High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate 査読有り

    Sugiyama, Takayuki; Amano, Hiroshi; Iida, Daisuke; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu

    Japanese Journal of Applied Physics   50 巻 ( 1 ) 頁: 01AD03/1-01AD03/3   2011年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We demonstrated the high-temp. operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 °C. The temperture dependence of their performance was compared with the results of simulation.

  301. MBE-VLS growth of catalyst-free III-V axial heterostructure nanowires on (1 1 1)Si substrates 査読有り

    Paek, Jihyun; Yamaguchi, Masahito; Amano, Hiroshi

    Journal of Crystal Growth   323 巻 ( 1 ) 頁: 315-318   2011年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    For application in novel opto-electronic nanowire devices, Ga-assisted GaAs/InxGa1-xAs axial heterostructure nanowires grown on a (1 1 1)Si substrate at a high In/Ga flux ratio were investigated. The increased diam. of the InxGa1-xAs region of the nanowire was obsd. from a SEM image. The In compn. of 0.01-0.02 of the InxGa1-xAs was shown by EDX point anal. The In concn. of 0.62 of an In-Ga alloy droplet was estd. from the diam. ratio of the InxGa1-xAs/GaAs region. From these results, it was considered that the excess In was collected in the droplet, resulting in an increased nanowire diam. The increased diam. of the InxGa1-xAs region was also discussed together with the results of thermodn. calcn.

  302. Microstructures of GaInN/GaInN superlattices on GaN substrates 査読有り

    Sugiyama, Toru; Kuwahara, Yosuke; Isobe, Yasuhiro; Fujii, Takahiro; Nonaka, Kentaro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   4 巻 ( 1 ) 頁: 015701/1-015701/3.   2011年1月

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    担当区分:筆頭著者   記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We found different behaviors of misfit dislocations in a Ga0.83In0.17N single layer and in Ga0.83In0.17N/Ga0.93In0.07N superlattices, both on GaN substrates. In the case of the single layer, misfit dislocations were formed at the GaInN/GaN interfaces and extended through the GaInN layer to the surface. In contrast, the misfit dislocations in the superlattices are bent laterally at interfaces between the Ga0.83In0.17N and Ga0.93In0.07N layers. In addn., most of the dislocations do not reach the surface owing to the formation of dislocation loops. As a result, the dislocation d. at the surface of the GaInN superlattice sample was 5 × 107 cm-2.

  303. Realization of nitride-based solar cell on freestanding GaN substrate 査読有り

    Kuwahara, Yosuke; Fujii, Takahiro; Fujiyama, Yasuharu; Sugiyama, Tohru; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   3 巻 ( 11 ) 頁: 111001/1-111001/3   2010年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A p-i-n solar cell composed of an undoped GaInN layer sandwiched between n- and p-type GaN layers was grown on a freestanding c-plane GaN substrate and a c-plane sapphire substrate covered with a low-temp.-deposited buffer layer. The open-circuit voltage is 2.23 V, the fill factor is 61%, the short-circuit c.d. is 1.59 mA/cm2, and the conversion efficiency of the solar cell on the GaN substrate is 1.41% using a solar simulator (1.5 suns). Compared with the solar cell characteristics of the device grown on the sapphire substrate, pit d. markedly decreases. As a result, shunt resistance increases, suppressing the open-circuit voltage drop.

  304. Strain relaxation mechanisms in AlGaN epitaxy on AlN templates 査読有り

    Wu, Zhihao; Nonaka, Kentaro; Kawal, Yohjiro; Asai, Toshiaki; Ponce, Fernando A.; Chen, Changqing; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Applied Physics Express   3 巻 ( 11 ) 頁: 111003/1-111003/3   2010年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Two strain relaxation processes have been obsd. in AGaN layers grown on thick AlN templates. In Process I, a type threading dislocations (TDs) with b = 1/3.ltbbrac.11.hivin.20.rtbbrac. from the AlN underlayer are inclined away from the [0001] axis toward the .ltbbrac.1.hivin.100.rtbbrac. directions when they enter the AlGaN film, forming dislocation line projection perpendicular to the Burger vector. In Process II, a + c-type TDs from the AlN underlayer with Burgers vector of b = 1/3.ltbbrac.11.hivin.23.rtbbrac. glide on {0.hivin.111} planes when they enter the AlGaN film to generate interfacial misfit dislocations lying along the .ltbbrac..hivin.2110.rtbbrac. directions at the AlGaN/AlN interface.

  305. Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy 査読有り

    Imura, Masataka; Ohnishi, Tsuyoshi; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Amano, Hiroshi; Lippmaa, Mikk

    Physica Status Solidi C   7 巻 ( 10 ) 頁: 2365-2367   2010年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    High-cryst. quality AlN layers with an atomically flat surface are grown on (0001) sapphire and 6H-SiC substrates by metal-org. vapor phase epitaxy at 1400 °C without low-temp. buffer layer. The polar direction of AlN layers is investigated by coaxial impact-collision ion scattering spectroscopy (CAICISS). For AlN growth on sapphire substrate, trimethylaluminum (TMAI) is supplied for 10 s before introducing ammonia (NH3). For AlN growth on SiC substrate, TMAl and NH3 are supplied at the same time. The CAICISS spectrum of AlN layers is analyzed by measuring the dependence of the Al atoms signal intensity on the angle of ion beam incidence considering the shadowing and focusing effects for detg. the polar direction of AlN layers. The CAICISS spectra clearly indicate the polar direction of AlN layers and both AlN layers are found to be had the Al-polarity.

  306. Atomic layer epitaxy of AlGaN 査読有り

    Nagamatsu, Kentaro; Iida, Daisuke; Takeda, Kenichiro; Nagata, Kensuke; Asai, Toshiaki; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C:   7 巻 ( 10 ) 頁: 2368-2370   2010年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Atomic layer epitaxy of AlGaN with an av. growth rate of as high as 4.5 mm/h has been achieved by the high-speed switching-valves (HSSVs) technique in a raised-pressure metalorg. vapor phase epitaxy system. Regarding the duration of group III metalorgs. and NH3 gases input, 0.1 s for each injection time is found to be sufficient to realize AlGaN growth of one monolayer per cycle over a 2-in. wafer with hydrogen and nitrogen carrier gases at a raised pressure. Low-temp. growth of high-quality AlGaN has been achieved using HSSVs.

  307. GaInN/GaN p-i-n light-emitting solar cells 査読有り

    Fujiyama, Y.; Kuwahara, Y.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Physica Status Solidi C   7 巻 ( 10 ) 頁: 2382-2385.   2010年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    GaInN/GaN p-i-n double-heterojunction structures were grown by metal-org. vapor phase epitaxy on c-plane sapphire substrates, and light-emitting solar cells with different GaInN active layer thicknesses were fabricated. The thickness of the GaInN active layer was varied from 100 to 400 nm, while the thickness of both n-type and p-type GaN layers was kept const. A semitransparent ohmic contact to p-type GaN was formed by electron-beam evapn. of Ni/Au (5 nm/5 nm). The film thickness of p-GaN was 50 nm. The external quantum efficiency (EQE) of the device with a 400 nm GaInN layer exceeded 60% at a wavelength of approx. 380 nm. The transparency of the Ni/Au electrode was 68%. Therefore, the internal quantum efficiency of this device exceeded 95%. Note that this device emitted green light when a forward voltage was applied. The electroluminescence peak wavelength was approx. 525 nm, which was much longer than the EQE peak wavelength. The origin of this large emission shift is discussed.

  308. Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate 査読有り

    Sugiyama, Takayuki; Iida, Daisuke; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C:   7 巻 ( 10 ) 頁: 2419-2422   2010年10月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We demonstrated high-temp. operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temp. Distinct normally off-mode operation with a max. drain current of 93.2 mA/mm at 300 °C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temp. switching devices.

  309. Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate 査読有り

    Sugiyama, T.; Iida, D.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁: 1980-1982   2010年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The threshold voltage (Vth) of normally off-mode AlGaN/GaN junction heterostructure field-effect transistors with a p-type GaN gate can be successfully controlled by inserting a SiNx insulator between the p-GaN and a Ni/Au electrode. The Vth can be controlled from +1 V to above +8 V. Moreover, the gate leakage current of transistors decreases and their gate voltage at which gate current steeply increases becomes higher. The mechanism of the threshold voltage change is analyzed by the equiv. circuit model.

  310. AlGaN/GaN HFETs on Fe-doped GaN substrates 査読有り

    Oshimura, Yoshinori; Takeda, Kenichiro; Sugiyama, Takayuki; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Bandoh, Akira; Udagawa, Takashi

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁: 1974-1976   2010年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    AlGaN/GaN HFETs with different undoped GaN thicknesses were grown on Fe-doped freestanding GaN substrates by conventional MOVPE. To realize a high drain current, thick undoped GaN is found to be necessary. SIMS measurement shows that Fe is redistributed into the epilayer, by which the scattering center is generated at the channel when the thickness of the undoped GaN is insufficient. We also obsd. a similar Fe profile in the GaN/sapphire template placed on the side of the Fe-doped GaN substrate during growth. Therefore, Fe in the Fe-doped GaN substrate is redistributed not only through a solid but also through vapor.

  311. Growth and characterization of GaN grown on moth-eye patterned sapphire substrates 査読有り

    Ishihara, Akihiro; Kawai, Ryousuke; Kitano, Thukasa; Suzuki, Atushi; Kondo, Toshiyuki; Iwaya, Motoaki; Amano, Hiroshi; Kamiyama, Satoshi; Akasaki, Isamu

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁: 2056-2058   2010年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    To realize high-efficiency light-emitting diodes (LEDs), it is necessary to increase light extn. efficiency. Therefore, the introduction of a moth-eye structure, which consists of periodic cones with a pitch of optical wavelength magnitude, into a sapphire surface before the epitaxial growth of nitride films is very promising for reducing the reflectivity of light resulting in high light extn. efficiency. 450 nm GaInN/GaN LEDs were fabricated on conventional and moth-eye substrates by metal org. vapor phase epitaxy (MOVPE). The intensity of room-temp. photoluminescence emitted from the LED with the moth-eye-patterned sapphire substrate was 1.6 times higher than that emitted from the LED without the moth-eye substrate. Under a current injection of 50 mA, the output power of the moth-eye LED is 3.6 times higher than that of the conventional LED.
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  312. Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy 査読有り

    Iida, Daisuke; Nagata, Kensuke; Makino, Takafumi; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Bandoh, Akira; Udagawa, Takashi

    Applied Physics Express   3 巻 ( 7 ) 頁: 075601/1-075601/2   2010年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  313. Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer 査読有り

    Asai, T.; Nonaka, K.; Ban, K.; Nagata, K.; Nagamatsu, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁: 2101-2103   2010年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We report on a new technol. for growing low-dislocation-d. AlGaN in which a Mg-doped AlN underlying layer is used. By growing AlxGa1-xN on AlN:Mg with AlN molar fractions x of 0.3, 0.5 and 0.7, the d. of misfit dislocations is much reduced compared with that in the case of growing AlGaN on undoped AlN. In addn., the surface becomes atomically flat.

  314. Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layers 査読有り

    Takeda, Kenichiro; Mori, Fumiaki; Ogiso, Yuji; Ichikawa, Tomoaki; Nonaka, Kentaro; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁: 1916-1918   2010年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Internal quantum efficiency (IQE) of GaN/AlGaN multi quantum wells on the low dislocation d. Al0.25Ga0.75N grown by epitaxial lateral overgrowth (ELO) and facet controlled epitaxial lateral overgrowth were investigated by excitation intensity dependent photoluminescence measurement. The threading dislocation d. decreased from 4 × 109cm-2 to 2 × 108 cm-2 by using ELO method, then the IQE was much improved from 5% to 40% when the carrier d. was 1 × 1018 cm-3.

  315. Mg-related acceptors in GaN 査読有り

    Monemar, B.; Paskov, P. P.; Pozina, G.; Hemmingsson, C.; Bergman, J. P.; Amano, H.; Akasaki, I.; Figge, S.; Hommel, D.; et al.

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁: 1850-1852   2010年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Photoluminescence spectra of c-plane Mg doped GaN samples grown by MOVPE on bulk GaN templates reveal previously unknown properties, like the presence of several Mg-related acceptors. The use of unstrained samples allows a study of both bound exciton (BE) and donor-acceptor pair (DAP) spectra. Two main acceptors A1 and A2 are obsd. strongly in BE spectra as well as in DAP spectra, they have similar binding energies, i.e. about 220 meV. The common assignment of the deeper blue PL emission at 2.8-3.0 eV to a deep donor-shallow acceptor transition is questioned, and discussed in connection with the compensation problem in p-GaN. It seems like the Fermi level in p-GaN is controlled by a set of Mg-related acceptors at energies 0.2-0.6 eV from the valence band top.

  316. Nitride-based light-emitting solar cell 査読有り

    Kuwahara, Y.; Fujiyama Y; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁: 1807-1809   2010年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We report on the characteristics of a group-III-nitride-based solar cell. A GaInN/GaN double heterojunction p-i-n solar cell composed of a GaInN active layer sandwiched between n-type and p-type GaN layers was grown by metal-org. vapor phase epitaxy through an undoped GaN layer on (0001) sapphire substrate. The InN molar fraction of the GaInN active layer was detd. to be 11% from a secondary ion mass spectrometry profile. The max. external quantum efficiency reached 65%, and the internal quantum efficiency was 95% or more. This device emitted light after forward current injection. The PL peak almost corresponded to the absorption edge. However, the electroluminescence (EL) peak was at the wavelength much longer than the absorption edge. The open-circuit voltage is 1.51 V, the fill factor is 52%, and the short-circuit c.d. is 1.6 mA/cm2.

  317. Study of two-dimensional electron gas in AlGaN channel HEMTs with high crystalline quality 査読有り

    Hashimoto, Shin; Akita, Katsushi; Tanabe, Tatsuya; Nakahata, Hideaki; Takeda, Kenichiro; Amano, Hiroshi

    Physica Status Solidi C   7 巻 ( 7-8 ) 頁: 1938-1940   2010年7月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Epitaxial structures of AlGaN channel high electron mobility transistors (HEMTs) were grown on sapphire and AlN substrates. Redn. in the full width at half max. of X-ray rocking curve for (10-12) peak of the AlGaN channel layer owing to the redn. of threading dislocation densities resulted in a sharp decrease in the sheet resistance of 2-dimensional electron gas (2DEG). In the case of AlGaN channel HEMTs, it was found that improvement of the cryst. quality of AlGaN channel layers is essential to the redn. of the sheet resistance of 2DEG. The use of AlN substrates resulted in improved cryst. quality of the AlGaN layer and lower 2DEG resistance, suggesting the high potential of AlN substrates for AlGaN channel HEMTs.

  318. Improved efficiency of 255-280 nm AlGaN-based light-emitting diodes 査読有り

    Pernot, Cyril; Kim, Myunghee; Fukahori, Shinya; Inazu, Tetsuhiko; Fujita, Takehiko; Nagasawa, Yosuke; Hirano, Akira; Ippommatsu, Masamichi; Iwaya, Motoaki; Kamiyama, Satoshi,Hiroshi Amano et al

    Applied Physics Express   3 巻 ( 6 ) 頁: 061004/1-061004/3   2010年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We report on the fabrication and characterization of AlGaN-based deep UV light-emitting diodes (LEDs) with the emission wavelength ranging from 255-280 nm depending on the Al compn. of the active region. The LEDs were flip-chip bonded and achieved external quantum efficiencies of over 3% for all investigated wavelengths. Under cw operation, an output power of more than 1 mW at 10 mA was demonstrated. A moth-eye structure was fabricated on the back side of the Al2O3 substrate, and on-wafer output power measurement indicated a 1.5-fold improvement of light extn.

  319. Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy 査読有り

    Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Journal of Crystal Growth   312 巻 ( 21 ) 頁: 3131-3135.   2010年6月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The elec. and optical properties of Mg-doped a- and c-plane GaN films grown by MOVPE were systematically investigated. The photoluminescence spectra of Mg-doped a- and c-plane GaN films exhibit strong emissions related to deep donors when Mg doping concns. are above 1 × 1020 cm-3 and 5 × 1019 cm-3, resp. The elec. properties also indicate the existence of compensating donors because the hole concn. decreases at such high Mg doping concns. In addn., we estd. the ND/NA compensation ratio of a- and c-plane GaN by variable-temp. Hall effect measurement. The obtained results indicate that the compensation effect of the Mg-doped a-plane GaN films is lower than that of the Mg-doped c-plane GaN films.

  320. Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO 査読有り

    Wu, Z. H.; Sun, K. W.; Wei, Q. Y.; Fischer, A. M.; Ponce, F. A.; Kawai, Y.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Applied Physics Letters   96 巻 ( 7 ) 頁: 071909/1-071909/3   2010年3月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The microstructure of m-plane InGaN epilayers grown on m-plane ZnO has been found to depend significantly on indium content in the range from 0.07 to 0.17, where anisotropic lattice mismatch between InGaN and ZnO results in decreasingly tensile and increasingly compressive stress along the a and c lattice axes. For indium content below 0.10, periodic arrays of misfit dislocations with a Burgers vector of 1/3[11-20] are obsd. parallel to the [0001] direction. For indium content above 0.12, generation of basal-plane stacking faults relieve the compressive stress along the 0001 direction. These characteristic mechanisms of strain relaxation should provide new approaches to engineer thick InGaN layers with reduced lattice misfit strain.

  321. Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy 査読有り

    Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

    Diamond and Related Materials   19 巻 ( 0 ) 頁: 131-133   2010年2月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We investigate the microstructures of domain boundaries in an AlN layer grown on a (001) diamond substrate by metal-org. vapor phase epitaxy. The AlN layer has a two-domain structure with crystal orientation along either <112-0> AlN [named by AlNI domain] or <101-0> AlN [named by AlNII domain] parallel to [110] direction of diamond. The AlNI and AlNII domains are not atomically bonded at two-domain boundary from initial to final step of growth, while an edge-type dislocation is generated at single-domain boundary (SDB). In addn., an inversion AlNI domain [named by AlNI*] is randomly-ordered at the initial stage of the coalescence between the AlNI domains. The AlNI* is easily terminated with increasing the thickness of AlNI domain. The inversion domain boundary changes to the edge-type dislocation at the SDB with further growth, which reduces the defect d. in the AlNI domains.

  322. High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient 査読有り

    Nagata, Kengo, Ichikawa, Tomoki, Takeda, Kenichiro, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Physica Status Solidi A:   207 巻 ( 0 ) 頁: 1393-1396   2010年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  323. MOVPE法により成長したa面及びc面MgドープGaNにおける補償効果 査読有り

    飯田大輔、田村健太、岩谷素顕、天野浩、上山智、赤﨑勇

      312 巻 ( 21 ) 頁: 3131-3135   2010年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  324. Defects in highly Mg-doped AlN 査読有り

    Nonaka, Kentaro, Asai, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Physica Status Solidi A   207 巻 ( 0 ) 頁: 1299-1301   2010年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  325. Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy 査読有り

    Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

    Journal of Crystal Growth   312 巻 ( 0 ) 頁: 368-372   2010年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  326. Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy 査読有り

    Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

    Journal of Crystal Growth   312 巻 ( 0 ) 頁: 1325-1328   2010年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  327. III族窒化物半導体へのp型ドーピングと結晶欠陥 招待有り 査読有り

    天野 浩、岩谷 素顕、上山 智、赤﨑 勇

    日本結晶成長学会誌   36 巻 ( 3 ) 頁: 200-204   2009年3月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:研究論文(学術雑誌)  

    GaNおよびAlGaNにおけるMgアクセプタの挙動の詳細を明らかにした。

  328. Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers 査読有り

    Murotani, Hideaki, Kuronaka, Takahiro, Yamada, Yoichi, Taguchi, Tsunemasa, Okada, Narihito, Amano, Hiroshi

    Journal of Applied Physics   105 巻 ( 0 ) 頁: 083533/1-083533/6   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  329. Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17) 査読有り

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Physica Status Solidi B:   246 巻 ( 0 ) 頁: 1188-1190   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  330. Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters 査読有り

    Mori, T., Nagamatsu, K., Nonaka, K., Takeda, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.

    Physica Status Solidi C   6 巻 ( 0 ) 頁: 2621-2625   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  331. Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films 査読有り

    Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Petrova, E. A., Amano, H., Kawashima, T., Scherbatchev, K. D., Bublik, V. T.

    Journal of Applied Physics   105 巻 ( 0 ) 頁: 063708/1-063708/9   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  332. Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth 査読有り

    Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yakimov, E. B., Vergeles, P. S., Amano, H., Kawashima, T.

    Journal of Crystal Growth   311 巻 ( 0 ) 頁: 2923-2925   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  333. Evidence for two Mg related acceptors in GaN 査読有り

    Monemar B, Paskov P P, Pozina G, Hemmingsson C, Bergman J P, Kawashima T, Amano H, Akasaki I, Paskova T, Figge S, et al

    Physical review letters   102 巻 ( 0 ) 頁: 235501/1-235501/4   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  334. Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields 査読有り

    Esmaeili, M., Gholami, M., Haratizadeh, H., Monemar, B., Holtz, P. O., Kamiyama, S., Amano, H., Akasaki, I.

    Opto-Electronics Review   17 巻 ( 0 ) 頁: 293-299   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  335. Growth of thick GaInN on grooved (1011) GaN/(1012) 4H-SiC 査読有り

    Matsubara, Tetsuya, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   311 巻 ( 0 ) 頁: 2926-2928   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  336. High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer 査読有り

    Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, et al

    Physica Status Solidi A   206 巻 ( 0 ) 頁: 1199-1204   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  337. InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy 査読有り

    Kawai, Yohjiro, Ohsuka, Shinya, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   311 巻 ( 0 ) 頁: 2929-2932   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  338. Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN 査読有り

    Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.

    Applied Physics Express   2 巻 ( 0 ) 頁: 041002/1-041002/3   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  339. Novel UV devices on high-quality AlGaN using grooved underlying layer 査読有り

    Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al

    Journal of Crystal Growth   311 巻 ( 0 ) 頁: 2860-2863   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  340. One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy 査読有り

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   311 巻 ( 0 ) 頁: 2887-2890   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  341. Optimization of electrode configuration in large GaInN light-emitting diodes 査読有り

    Ochiai, Wataru, Kawai, Ryosuke, Suzuki, Atsushi, Iwaya, Motoaki, Amano, Hiroshi, Kamiyama, Satoshi, Akasaki, Isamu

    Physica Status Solidic   6 巻 ( 0 ) 頁: 1416-1419   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  342. Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer 査読有り

    Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   311 巻 ( 0 ) 頁: 2850-2852   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  343. Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN 査読有り

    Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Applied Physics Express   2 巻 ( 0 ) 頁: 061004/1-061004/3   2009年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  344. Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates 査読有り

    Imura Masataka, Sugimura Hiroki, Okada Narihito, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira

    J. Crystal Growth   310 巻 ( 0 ) 頁: 2308-2313   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  345. High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN 査読有り

    Nagamatsu Kentaro, Okada Narihito, Sugimura Hiroki, Tsuzuki Hirotoshi, Mori Fumiaki, Iida Kazuyoshi, Bando Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   310 巻 ( 0 ) 頁: 2326-2329   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  346. High hole concentration in Mg-doped a-plane Ga1-xInxN (0<x<0.30) grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy 査読有り

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Applied Physics Letters   93 巻 ( 0 ) 頁: 182108/1-182108/3   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  347. All MOVPE grown nitride-based LED having sub mm underlying GaN 査読有り

    Tanaka Y., Ando J., Iida D., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   5 巻 ( 0 ) 頁: 3073-3075   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  348. Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE 査読有り

    Nagamatsu Kentaro, Okada Narihito, Kato Naofumi, Sumii Takafumi, Bandoh Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Physica Status Solidi C   5 巻 ( 0 ) 頁: 3048-3050   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  349. Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth 査読有り

    Senda Ryota, Miura Aya, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Physica Status Solidi C   5 巻 ( 0 ) 頁: 3045-3047   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  350. InGaN growth on ZnO (0001) substrate by metalorganic vapor phase epitaxy 査読有り

    Kawai Y., Ohsuka S., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   5 巻 ( 0 ) 頁: 3023-3025   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  351. Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates 査読有り

    Miura Aya, Nagai Tetsuya, Senda Ryota, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    J. Crystal Growth   310 巻 ( 0 ) 頁: 3308-3312   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  352. Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth 査読有り

    Kawashima T., Hayakawa T., Hayashi M., Nagai T., Iida D., Miura A., Kasamatsu Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   5 巻 ( 0 ) 頁: 2145-2147   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  353. Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire 査読有り

    Iida K., Watanabe H., Takeda K., Mori F., Tsuzuki H., Yamashita Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.

    Physica Status Solidi C   5 巻 ( 0 ) 頁: 2142-2144   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  354. High drain current and low on resistance normally-off-mode AlGaN/GaN junction HFETs with a p-type GaN gate contact. 査読有り

    Fujii T., Nakamura S., Mizuno K., Nega R., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   5 巻 ( 0 ) 頁: 1906-1909   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  355. Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth. Optical evidences for a reduced stacking fault density 査読有り

    Paskov P. P., Monemar B., Iida D., Kawashima T., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   5 巻 ( 0 ) 頁: 1768-1770   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  356. Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates 査読有り

    Imura M., Sugimura H., Okada N., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bando A.

    Physica Status Solidi C   5 巻 ( 0 ) 頁: 1582-1584   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  357. Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy 査読有り

    Iida Daisuke, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Physica Status Solidi C   5 巻 ( 0 ) 頁: 1575-1578   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  358. Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy 査読有り

    Kato Naofumi, Sato S., Sugimura H., Sumii T., Okada N., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.

    Physica Status Solidi C   5 巻 ( 0 ) 頁: 1559-1561   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  359. Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates 査読有り

    Pozina G., Hemmingsson C., Paskov P. P., Bergman J. P., Monemar B., Kawashima T., Amano H., Akasaki I., Usui A.

    Appl. Phys. Lett.   92 巻 ( 0 ) 頁: 151904/1-151904/3   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  360. Photoluminescence from highly excited AlN epitaxial layers. 査読有り

    Yamada Yoichi, Choi Kihyun, Shin Seungho, Murotani Hideaki, Taguchi Tsunemasa, Okada Narihito, Amano Hiroshi

    Appl. Phys. Lett.   92 巻 ( 0 ) 頁: 131912/1-131912/3   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  361. Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates 査読有り

    Pozina, G., Hemmingsson, C., Paskov, P. P., Bergman, J. P., Monemar, B., Kawashima, T., Amano, H., Akasaki, I., Usui, A.

    Applied Physics Letters   92 巻 ( 0 ) 頁: 151904/1-151904/3   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  362. AlN and AlGaN by MOVPE for UV light emitting devices 査読有り

    Amano, Hiroshi, Imura, Masataka, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu

    Materials Science Forum   590 巻 ( 0 ) 頁: 175-210   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  363. Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode 査読有り

    Akasaki, Isamu, Amano, Hiroshi

    Japanese Journal of Applied Physics   47 巻 ( 0 ) 頁: 3781   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  364. Control of p-type conduction in a-plane Ga1-xInxN (0 < x < 0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy 査読有り

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   310 巻 ( 0 ) 頁: 4996-4998   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  365. Control of stress and crystalline quality in GaInN films used for green emitters 査読有り

    Iwaya, Motoaki, Miura, Aya, Senda, Ryota, Nagai, Tetsuya, Kawashima, Takeshi, Iida, Daisuke, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   310 巻 ( 0 ) 頁: 4920-4922   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  366. Dynamical study of the radiative recombination processes in GaN/AlGaN QWs 査読有り

    Sabooni, Mahmood, Esmaeili, Morteza, Haratizadeh, Hamid, Monemar, Bo, Amano, Hiroshi

    Journal of Materials Science: Materials in Electronics   19 巻 ( 0 ) 頁: S316-S318   2008年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  367. Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen 査読有り

    Kamei K., Shirai Y., Tanaka T., Okada N., Yauchi A., Amano H..

    Physica Status Solidi C:   4 巻 ( 0 ) 頁: 2211-2214   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  368. Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates 査読有り

    Pozina G., Paskov P. P., Bergman J. P., Hemmingsson C., Hultman L., Monemar B., Amano H., Akasaki I., Usui A.

    Appl. Phys. Lett.   91 巻 ( 0 ) 頁: 221901/1-221901/3   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  369. Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates 査読有り

    Pozina G., Monemar B., Paskov P. P., Hemmingsson C., Hultman L., Amano H., Akasaki I., Paskova T., Figge S., Hommel D., Usui A.

    Physica B   401-402 巻 ( 0 ) 頁: 302-306   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  370. Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth 査読有り

    Senda Ryota, Miura Aya, Hayakawa Takemasa, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   46 巻 ( 0 ) 頁: L948-L950   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  371. Dependence of DAP emission properties on impurity concentrations in N-/B-co-doped 6H-SiC. 査読有り

    Murata Satoshi, Nakamura Yoshihiro, Maeda Tomohiko, Shibata Yoko, Ikuta Mina, Sugiura Masaaki, Nitta Shugo, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Yoshimoto Masahiro, Furusho Tomoaki, Kinoshita Hiroyuki.

    Materials Science Forum   556-557 巻 ( 0 ) 頁: 335-338   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  372. Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification 査読有り

    Okada N., Kato N., Sato S., Sumii T., Nagai T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Noro T., Bandoh A.

    J. Crystal Growth   298 巻 ( 0 ) 頁: 349-353   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  373. Microstructure in nonpolar m-plane GaN and AlGaN films 査読有り

    Nagai T., Kawashima T., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    J. Crystal Growth   298 巻 ( 0 ) 頁: 288-292   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  374. Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE 査読有り

    Okada N., Kato N., Sato S., Sumii T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Bandoh A.

    J. Crystal Growth   300 巻 ( 0 ) 頁: 141-144   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  375. Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio 査読有り

    Imura Masataka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    J. Crystal Growth   300 巻 ( 0 ) 頁: 136-140   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  376. Epitaxial lateral overgrowth of AlxGa1-xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices 査読有り

    Iida Kazuyoshi, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira.

    J. Crystal Growth   298 巻 ( 0 ) 頁: 265-267   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  377. Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates 査読有り

    Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    J. Crystal Growth   298 巻 ( 0 ) 頁: 261-264   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  378. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers 査読有り

    Imura Masataka, Nakano Kiyotaka, Narita Gou, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    J. Crystal Growth   298 巻 ( 0 ) 頁: 257-260   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  379. High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE 査読有り

    Kato N., Sato S., Sumii T., Fujimoto N., Okada N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.

    J. Crystal Growth   298 巻 ( 0 ) 頁: 215-218   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  380. Reduction in defect density over whole area of (1-100) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth. 査読有り

    Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi B   244 巻 ( 0 ) 頁: 1848-1852   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  381. Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X-ray diffraction analyses. 査読有り

    Inaba Katsuhiko, Amano Hiroshi.

    Physica Status Solidi B   244 巻 ( 0 ) 頁: 1775-1779   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  382. Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum well 査読有り

    Haratizadeh H., Monemar B., Paskov Plamen P., Holtz Per Olof, Valcheva E., Persson P., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi B   244 巻 ( 0 ) 頁: 1727-1734   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  383. One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters 査読有り

    Iida D., Miura A., Okadome Y., Tsuchiya Y., Kawashima T., Nagai T., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi A   204 巻 ( 0 ) 頁: 2005-2009   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  384. High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate 査読有り

    Iida K., Watanabe H., Takeda K., Nagai T., Sumii T., Nagamatsu K., Kawashima T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bandoh A.

    Physica Status Solidi A   204 巻 ( 0 ) 頁: 2000-2004   2007年

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  385. Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces. 査読有り

    Valcheva E., Dimitrov S., Monemar B., Haratizadeh H., Persson P. O. A., Amano H., Akasaki I.

    Acta Physica Polonica, A   112 巻 ( 0 ) 頁: 395-400   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  386. Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques 査読有り

    Chichibu S. F., Uedono A., Onuma T., Haskell B. A., Chakraborty A., Koyama T., Fini P. T., Keller S., Denbaars S. P., Speck J. S., Mishra U. K., Nakamura S., Yamaguchi S., Kamiyama S., Amano H., Akasaki I., Han J., Sota T.

    Philosophical Magazine   87 巻 ( 0 ) 頁: 2019-2039   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  387. Entirely crack-free ultraviolet GaN/AlGaN laser diodes grown on 2-in. Sapphire substrate. 査読有り

    Yoshida Harumasa, Takagi Yasufumi, Kuwabara Masakazu, Amano Hiroshi, Kan Hirofumi.

    Jpn. J. Appl. Phys.   46 巻 ( 0 ) 頁: 5782-5784   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  388. Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy 査読有り

    Balakrishnan Krishnan, Bandoh Akria, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   46 巻 ( 0 ) 頁: L307-L310   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  389. Dislocations in AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy 査読有り

    Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    Jpn. J. Appl. Phys.   46 巻 ( 0 ) 頁: 1458-1462   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  390. Control of threshold voltage of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate contact 査読有り

    Fujii Takahiro, Tsuyukuchi Norio, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   46 巻 ( 0 ) 頁: 115-118   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  391. Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping. 査読有り

    Esmaeili M., Haratizadeh H., Monemar B., Paskov P. P., Holtz P. O., Bergman P., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Nanotechnology   18 巻 ( 0 ) 頁: 025401/1-025401/6   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  392. Fabrication of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact 査読有り

    Fujii T., Tsuyukuchi N., Hirose Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   4 巻 ( 0 ) 頁: 2708-2711   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  393. Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy 査読有り

    Okada N., Imura M., Nagai T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi C   4 巻 ( 0 ) 頁: 2528-2531   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  394. Mg-doped high-quality AlxGa1-xN (x = 0-1) grown by high-temperature metal-organic vapor phase epitaxy 査読有り

    Imura M., Kato N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi C   4 巻 ( 0 ) 頁: 2502-2505   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  395. Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE 査読有り

    Balakrishnan K., Iida K., Bandoh A., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   4 巻 ( 0 ) 頁: 2272-2276   2007年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  396. Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates 査読有り

    Balakrishnan K., Fujimoto N., Kitano T., Bandoh A., Imura M., Nakano K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Shimono K., Riemann T., Christen J.

    Physica Status Solidi C   3 巻 ( 0 ) 頁: 1392-1395   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  397. Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy 査読有り

    Imura M., Nakano K., Kitano T., Fujimoto N., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.

    Appl. Phys. Lett.   89 巻 ( 0 ) 頁: 221901/1-221901/2   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  398. Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact 査読有り

    Tsuyukuchi Norio, Nagamatsu Kentaro, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   45 巻 ( 0 ) 頁: L319-L321   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  399. High on/off ratio in enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with P-type GaN gate contact 査読有り

    Fujii Takahiro, Tsuyukuchi Norio, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   45 巻 ( 0 ) 頁: L1048-L1050   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  400. Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode 査読有り

    Akasaki Isamu, Amano Hiroshi.

    Jpn. J. Appl. Phys.   45 巻 ( 0 ) 頁: 9001-9010   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  401. High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio 査読有り

    Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    Jpn. J. Appl. Phys.   45 巻 ( 0 ) 頁: 8639-8643   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  402. Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire 査読有り

    Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   45 巻 ( 0 ) 頁: 2509-2513   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  403. Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy 査読有り

    Okada Narihito, Fujimoto Naoki, Kitano Tsukasa, Narita Gou, Imura Masataka, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Shimono Kenji, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    Jpn. J. Appl. Phys.   45 巻 ( 0 ) 頁: 2502-2504   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  404. Effect of UV irradiation by UV LED on the apoptosis and necrosis of Jurkat cells 査読有り

    Inada Shunko Albano, Amano Hiroshi, Akasaki Isamu, Morita Akinori, Kobayashi Keiko.

    Meijo Daigaku Sogo Kenkyusho Sogo Gakujutsu Kenkyu Ronbunshu   5 巻 ( 0 ) 頁: 73-77   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  405. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors 査読有り

    Chichibu Shigefusa F., Uedono Akira, Onuma Takeyoshi, Haskell Benjamin A., Chakraborty Arpan, Koyama Takahiro, Fini Paul T., Keller Stacia, DenBaars Steven P., Speck James S., Mishra Umesh K., Nakamura Shuji, Yamaguchi Shigeo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Han Jung, Sota Takayuki. O

    Nature Materials   5 巻 ( 0 ) 頁: 810-816   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  406. Growth of high-quality AlN at high growth rate by high-temperature MOVPE 査読有り

    Fujimoto N., Kitano T., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi C   3 巻 ( 0 ) 頁: 1617-1619   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  407. Light extraction process in moth-eye structure 査読有り

    Kasugai H., Nagamatsu K., Miyake Y., Honshio A., Kawashima T., Iida K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kinoshita H., Shiomi H.

    Physica Status Solidi C   3 巻 ( 0 ) 頁: 2165-2168   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  408. Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells 査読有り

    Arnaudov B., Paskov P. P., Haratizadeh H., Holtz P. O., Monemar B., Kamiyama S., Iwaya M., Amano H., Akasaki I.

    Physica Status Solidi C   3 巻 ( 0 ) 頁: 1888-1891   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  409. Polarity and microstructure in InN thin layers grown by MOVPE 査読有り

    Kuwano N., Nakahara Y., Amano H..

    Physica Status Solidi C   3 巻 ( 0 ) 頁: 1523-1526   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  410. Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC 査読有り

    Kamiyama S., Maeda T., Nakamura Y., Iwaya M., Amano H., Akasaki I., Kinoshita H., Furusho T., Yoshimoto M., Kimoto T., Suda J., Henry A., Ivanov I. G., Bergman J. P., Monemar B., Onuma T., Chichibu S. F.

    J. Apl. Phys.   99 巻 ( 0 ) 頁: 093108/1-093108/4   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  411. A hydrogen-related shallow donor in GaN? 査読有り

    Monemar B., Paskov P. P., Bergman J. P., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica B   376-377 巻 ( 0 ) 頁: 460-463   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  412. Dominant shallow acceptor enhanced by oxygen doping in GaN 査読有り

    Monemar B., Paskov P. P., Tuomisto F., Saarinen K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kimura S.

    Physica B   376-377 巻 ( 0 ) 頁: 440-443   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  413. Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate 査読有り

    Imura M., Honshio A., Miyake Y., Nakano K., Tsuchiya N., Tsuda M., Okadome Y., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica B   376-377 巻 ( 0 ) 頁: 491-495   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  414. Dominant shallow acceptor enhanced by oxygen doping in GaN 査読有り

    Monemar B, Paskov P P, Tuomisto F, Saarinen K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Kimura S

    Physica B   376-377 巻 ( 0 ) 頁: 440-443   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  415. 6H-SiC homoepitaxial growth and optical property of boron- and nitrogen-doped donor-acceptor pair (DAP) emission on 1° -off substrate by closed-space sublimation method 査読有り

    Kawai Y., Maeda T., Nakamura Y., Sakurai Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Yoshimoto M., Furusho T., Kinoshita H., Shiomi H.

    Materials Science Forum   527 巻 ( 0 ) 頁: 263-266   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  416. Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure 査読有り

    Iwaya M., Kasugai H., Kawashima T., Iida K., Honshio A., Miyake Y., Kamiyama S., Amano H., Akasaki I.

    Thin Solid Films   515 巻 ( 0 ) 頁: 768-770   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  417. X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN 査読有り

    Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Physica Status Solidi B   243 巻 ( 0 ) 頁: 1524-1528   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  418. Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates 査読有り

    Nakano K., Imura M., Narita G., Kitano T., Hirose Y., Fujimoto N., Okada N., Kawashima T., Iida K., Balakrishnan K., Tsuda M., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi A   203 巻 ( 0 ) 頁: 1632-1635   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  419. Microstructure of thick AlN grown on sapphire by high-temperature MOVPE 査読有り

    Imura M., Nakano K., Kitano T., Fujimoto N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi A   203 巻 ( 0 ) 頁: 1626-1631   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  420. Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells 査読有り

    Haratizadeh Hamid, Monemar Bo, Amano Hiroshi

    Physica Status Solidi A   203 巻 ( 0 ) 頁: 149-153   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  421. Photoluminescence of GaN/AlN superlattices grown by MOCVD 査読有り

    PP Paskov JP Bergman V Darakchieva T Paskova B Monemar M IwayaS Kamiyama H Amano and I Akasaki

    Physica Status Solidi C: Current Topics in Solid State Physics   2 巻 ( 0 ) 頁: pp2345-2348   2005年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  422. Optical properties of InN related to surface plasmons 査読有り

    Shubina T V, Leymarie J, Jmerik V N, Toropov A A, Vasson A, Amano H, Schaff W J, Monemar B, Ivanov S V

    Physica Status Solidi A   202 巻 ( 0 ) 頁: 2633-2641   2005年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  423. CBED study of grain misorientations in AlGaN epilayers 査読有り

    Sahonta S-L, Cherns D, Liu R, Ponce F A, Amano H, Akasaki I

    Ultramicroscopy   103 巻 ( 0 ) 頁: 23-32   2005年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  424. Phonon mode behavior in strained wurtzite AlN/GaN superlattices 査読有り

    Darakchieva V, Valcheva E, Paskov P P, Schubert M, Paskova T, Monemar B, Amano H, Akasaki I

    Physical Review B   71 巻 ( 0 ) 頁: 115329/1-115329/9   2005年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  425. High-rate growth of films of dense, aligned double-walled carbon nanotubes using microwave plasma-enhanced chemical vapor deposition 査読有り

    Hiramatsu Mineo, Nagao Hidetoshi, Taniguchi Masaki, Amano Hiroshi, Ando Yoshinori, Hori Masaru

    Jpn. J. Appl. Phys.   44 巻 ( 0 ) 頁: L693-L695   2005年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  426. Control of p-type conduction in a-plane GaN grown on sapphire r-plane substrate 査読有り

    Tsuchiya Yosuke, Okadome Yoshizane, Honshio Akira, Miyake Yasuto, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   44 巻 ( 0 ) 頁: L1516-L1518   2005年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  427. Flat (11-20) GaN thin film on precisely offset-controlled (11-02) sapphire substrate 査読有り

    Imura Masataka, Hoshino Akira, Nakano Kiyotaka, Tsuda Michinobu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   44 巻 ( 0 ) 頁: 7418-7420   2005年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  428. High-efficiency nitride-based light-emitting diodes with moth-eye structure 査読有り

    Kasugai Hideki, Miyake Yasuto, Honshio Akira, Mishima Shunsuke, Kawashima Takeshi, Iida Kazuyoshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Kinoshita Hiroyuki, Shiomi Hiromu

    Jpn. J. Appl. Phys.   44 巻 ( 0 ) 頁: 7414-7417   2005年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  429. Impact of H2-preannealing of the sapphire substrate on the crystallinity of low-temperature-deposited AlN buffer layer 査読有り

    Tsuda Michinobu, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   44 巻 ( 0 ) 頁: 3913-3917   2005年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  430. Vertical growth of carbon nanowalls using rf plasma-enhanced chemical vapor deposition 査読有り

    Shiji K, Hiramatsu M, Enomoto A, Nakamura M, Amano H, Hori M

    Diamond and Related Materials   14 巻 ( 0 ) 頁: 831-834   2005年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  431. UV laser diode with 3509-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology 査読有り

    Kamiyama Satoshi, Iida Kazuyoshi, Kawashima Takeshi, Kasugai Hideki, Mishima Shunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu

    IEEE Journal of Selected Topics in Quantum Electronics   11 巻 ( 0 ) 頁: 1069-1073   2005年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  432. Free-to-bound radiative recombination in highly conducting InN epitaxial layers 査読有り

    Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I

    Superlattices and Microstructures   36 巻 ( 0 ) 頁: 563-571   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  433. High-quality Al012Ga088N film with low dislocation density grown on facet-controlled Al012Ga088N by MOVPE 査読有り

    Kawashima Takeshi, Iida Kazuyoshi, Miyake Yasuto, Honshio Akira, Kasugai Hideki, Imura Masataka, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   272 巻 ( 0 ) 頁: 377-380   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  434. Laser diode of 3509nm wavelength grown on sapphire substrate by MOVPE 査読有り

    Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   272 巻 ( 0 ) 頁: 270-273   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  435. Time resolved photoluminescence study of Si modulation doped GaN/Al093N multiple quantum wells 査読有り

    Haratizadeh H, Monemar B, Paskov P P, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   241 巻 ( 0 ) 頁: 1124-1133   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  436. Defect and stress control of AlGaN for fabrication of high performance UV light emitters 査読有り

    Amano H, Miyazaki A, Iida K, Kawashima T, Iwaya M, Kamiyama S, Akasaki I, Liu R, Bell A, Ponce F A, Sahonta S, Cherns D

    Physica Status Solidi A: Applied Research   201 巻 ( 0 ) 頁: 2679-2685   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  437. Optical investigation of AlGaN/GaN quantum wells and superlattices 査読有り

    Monemar B, Paskov P P, Haradizadeh H, Bergman J P, Valcheva E, Darakchieva V, Arnaudov B, Paskova T, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   201 巻 ( 0 ) 頁: 2251-2258   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  438. Mie Resonances, Infrared Emission, and the Band Gap of InN 査読有り

    Shubina T V, Ivanov S V, Jmerik V N, Solnyshkov D D, Vekshin V A, Kop'ev P S, Vasson A, Leymarie J, Kavokin A, Amano H, Shimono K, Kasic A, Monemar B

    Physical Review Letters   92 巻 ( 0 ) 頁: 117407/1-117407/4   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  439. The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films 査読有り

    Cherns D, Sahonta S-L, Liu R, Ponce F A, Amano H, Akasaki I

    Appl. Phys. Lett.   85 巻 ( 0 ) 頁: 4923-4925   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  440. Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth 査読有り

    Bell A, Liu R, Parasuraman U K, Ponce F A, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   85 巻 ( 0 ) 頁: 3417-3419   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  441. Photoluminescence study of Si-doped GaN/Al007Ga093N multiple quantum wells with different dopant position 査読有り

    Haratizadeh H, Monemar B, Paskov P P, Bergman J P, Sernelius B E, Holtz P O, Iwaya M, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   84 巻 ( 0 ) 頁: 5071-5073   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  442. Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection 査読有り

    Hiramatsu M, Shiji K, Amano H, Hori M

    Appl. Phys. Lett.   84 巻 ( 0 ) 頁: 4708-4710   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  443. Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels 査読有り

    Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   69 巻 ( 0 ) 頁: 115216/1-115216/5   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  444. 3509 nm UV laser diode grown on low-dislocation-density AlGaN 査読有り

    Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters & Express Letters   43 巻 ( 0 ) 頁: L499-L500   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  445. Study on the seeded growth of AlN bulk crystals by sublimation 査読有り

    Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Takagi Takashi, Noro Tadashi

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   43 巻 ( 0 ) 頁: 7448-7453   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  446. Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements 査読有り

    Takeda Y, Tabuchi M, Amano H, Akasaki I

    Surface Review and Letters   10 巻 ( 0 ) 頁: 537-541   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  447. Growth-induced defects in AlN/GaN superlattices with different periods 査読有り

    Valcheva E, Paskova T, Radnoczi G Z, Hultman L, Monemar B, Amano H, Akasaki I

    Physica B: Condensed Matter AmsterdamNetherlands   340-342 巻 ( 0 ) 頁: 1129-1132   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  448. Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I

    J. Crystal Growth   248 巻 ( 0 ) 頁: 503-506   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  449. Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN 査読有り

    Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Itoh T, McCreery R L, Murakami Masanori, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   240 巻 ( 0 ) 頁: 356-359   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  450. Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures 査読有り

    Monemar B, Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   237 巻 ( 0 ) 頁: 353-364   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  451. Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE 査読有り

    Tsuda Michinobu, Watanabe Kenichi, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Liu Rong, Bell Abigail, Ponce Fernando A

    Applied Surface Science   216 巻 ( 0 ) 頁: 585-589   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  452. Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy 査読有り

    Tomida Yoshihito, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Otani Shigeki, Kinoshita Hiroyuki, Liu Rong, Bell Abigail, Ponce Fernando A

    Applied Surface Science   216 巻 ( 0 ) 頁: 502-507   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  453. Violet and UV light-emitting diodes grown on ZrB2 substrate 査読有り

    Kamiyama S, Takanami S, Tomida Y, Iida K, Kawashima T, Fukui S, Iwaya M, Kinoshita H, Matsuda T, Yasuda T, Otani S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   200 巻 ( 0 ) 頁: 67-70   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  454. Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN 査読有り

    Iwaya M, Takanami S, Miyazaki A, Kawashima T, Iida K, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   200 巻 ( 0 ) 頁: 110-113   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  455. Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields 査読有り

    Monemar B, Paskov P P, Haratizadeh H, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   195 巻 ( 0 ) 頁: 523-527   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  456. Group III nitride-based UV light emitting devices 査読有り

    Amano H, Takanami S, Iwaya M, Kamiyama S, Akasaki I

    Physica Status Solidi A: Applied Research   195 巻 ( 0 ) 頁: 491-495   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  457. Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy 査読有り

    Onuma T, Chichibu S F, Uchinuma Y, Sota T, Yamaguchi S, Kamiyama S, Amano H, Akasaki I

    J. Apl. Phys.   94 巻 ( 0 ) 頁: 2449-2453   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  458. Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates 査読有り

    Sumiya M, Ogusu N, Yotsuda Y, Itoh M, Fuke S, Nakamura T, Mochizuki S, Sano T, Kamiyama S, Amano H, Akasaki I

    J. Apl. Phys.   93 巻 ( 0 ) 頁: 1311-1319   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  459. Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire 査読有り

    Bell A, Liu R, Ponce F A, Amano H, Akasaki I, Cherns D

    Appl. Phys. Lett.   82 巻 ( 0 ) 頁: 349-351   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  460. High-power UV-light-emitting diode on sapphire 査読有り

    Iwaya Motoaki, Takanami Shun, Miyazaki Atsushi, Watanabe Yasuhiro, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   42 巻 ( 0 ) 頁: 400-403   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  461. ZrB2 substrate for nitride semiconductors 査読有り

    Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Hiroyuki

    Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers   42 巻 ( 0 ) 頁: 2260-2264   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  462. Piezoelectric effect in group-III nitride-based heterostructures and quantum wells 査読有り

    Takeuchi T, Wetzel C, Amano H, Akasaki I

    Optoelectronic Properties of Semiconductors and Superlattices   16 巻 ( 0 ) 頁: 399-438   2003年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  463. Structural analysis of Si-doped AlGaN/GaN multi-quantum wells 査読有り

    Nakamura Tetsuya, Mochizuki Shingo, Terao Shinji, Sano Tomoaki, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   237-239 巻 ( 0 ) 頁: 1129-1132   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  464. Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers 査読有り

    Tabuchi M, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I

    J. Crystal Growth   237-239 巻 ( 0 ) 頁: 1133-1138   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  465. Photoluminescence and electroluminescence characterization of InxGa1-xN/InyGa1-yN multiple quantum well light emitting diodes 査読有り

    Bergman J P, Pozina G, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Materials Science Forum   389-393 巻 ( 0 ) 頁: 1493-1496   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  466. MOVPE growth and characterization of Al1-xInxN/GaN multiple layers 査読有り

    Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Watanabe Yasuhiro, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   237-239 巻 ( 0 ) 頁: 968-971   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  467. Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN 査読有り

    Iwaya Motoaki, Terao Shinji, Sano Tomoaki, Ukai Tsutomu, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   237-239 巻 ( 0 ) 頁: 951-955   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  468. Relaxation of misfit-induced stress in nitride-based heterostructures 査読有り

    Terao Shinji, Iwaya Motoaki, Sano Tomoaki, Nakamura Tetsuya, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   237-239 巻 ( 0 ) 頁: 947-950   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  469. Characterization of local structures around In atoms in Ga1-xInxN layers by fluorescence EXAFS measurements 査読有り

    Tabuchi M, Katou D, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I

    J. Crystal Growth   237-239 巻 ( 0 ) 頁: 1139-1142   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  470. Electric fields in polarized GaInN/GaN heterostructures 査読有り

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    Optoelectronic Properties of Semiconductors and Superlattices   14 巻 ( 0 ) 頁: 219-258   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  471. Reduction of threading dislocation density in AlxGa1-xN grown on periodically grooved substrates 査読有り

    Mochizuki Shingo, Detchprohm Theeradetch, Sano Shigekazu, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   237-239 巻 ( 0 ) 頁: 1065-1069   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  472. Low-dislocation-density GaN and AlxGa1-xN (x? 013) grown on grooved substrates 査読有り

    Sano Shigekazu, Detchprohm Theeradetch, Mochizuki Shingo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   235 巻 ( 0 ) 頁: 129-134   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  473. Migration of dislocations in strained GaN heteroepitaxial layers 査読有り

    Sahonta S-L, Baines M Q, Cherns D, Amano H, Ponce F A

    Physica Status Solidi B: Basic Research   234 巻 ( 0 ) 頁: 952-955   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  474. Mg incorporation in AlGaN layers grown on grooved sapphire substrates 査読有り

    Cherns D, Baines M Q, Wang Y Q, Liu R, Ponce F A, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   234 巻 ( 0 ) 頁: 850-854   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  475. Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells 査読有り

    Paskov P P, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   234 巻 ( 0 ) 頁: 755-758   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  476. Mass transport of AlxGa1-xN 査読有り

    Nitta S, Yukawa Y, Watanabe Y, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   194 巻 ( 0 ) 頁: 485-488   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  477. High-efficiency UV light-emitting diode 査読有り

    Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   194 巻 ( 0 ) 頁: 393-398   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  478. Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   192 巻 ( 0 ) 頁: 453-455   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  479. Annihilation of threading dislocations in GaN/AlGaN 査読有り

    Kuwano N, Tsuruda T, Adachi Y, Terao S, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   192 巻 ( 0 ) 頁: 366-370   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  480. UV light-emitting diode fabricated on hetero-ELO-grown Al022Ga078N with low dislocation density 査読有り

    Kamiyama S, Iwaya M, Takanami S, Terao S, Miyazaki A, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   192 巻 ( 0 ) 頁: 296-300   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  481. Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures 査読有り

    Monemar B, Paskov P P, Pozina G, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   192 巻 ( 0 ) 頁: 21-26   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  482. Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells 査読有り

    Monemar B, Paskov P P, Bergman J P, Pozina G, Paskova T, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   190 巻 ( 0 ) 頁: 161-166   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  483. Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templates 査読有り

    Pozina G, Bergman J P, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   190 巻 ( 0 ) 頁: 107-111   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  484. High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi S, Iwamura Y, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I

    Institute of Physics Conference Series   170 巻 ( 0 ) 頁: 813-817   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  485. Growth of high-quality GaN on metallic-ZrB2 by metalorganic vapor phase epitaxy 査読有り

    Yukawa Y, Nakamura T, Kosaki M, Watanabe Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H

    Institute of Physics Conference Series   170 巻 ( 0 ) 頁: 713-718   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  486. Low-dislocation-density AlxGa1-xN single crystals grown on grooved substrates 査読有り

    Sano Shigekazu, Detchprohm Theeradetch, Yano Masahiro, Nakamura Ryo, Mochizuki Shingo, Amano Hiroshi, Akasaki Isamu

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   93 巻 ( 0 ) 頁: 197-201   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  487. In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology 査読有り

    Nitta Shugo, Yukawa Yohei, Watanabe Yasuhiro, Kosaki Masayoshi, Iwaya Motoaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   93 巻 ( 0 ) 頁: 139-142   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  488. Optical characterization of III-nitrides 査読有り

    Monemar B, Paskov P P, Paskova T, Bergman J P, Pozina G, Chen W M, Hai P N, Buyanova I A, Amano H, Akasaki I

    Materials Science & Engineering B: Solid-State Materials for Advanced Technology   93 巻 ( 0 ) 頁: 112-122   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  489. Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN 査読有り

    Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Murakami Masanori, Kamiyama S, Amano H, Akasaki I

    J. Apl. Phys.   92 巻 ( 0 ) 頁: 3657-3661   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  490. Atomic arrangement at the AlN/ZrB2 interface 査読有り

    Liu R, Bell A, Ponce F A, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   81 巻 ( 0 ) 頁: 3182-3184   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  491. Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi Shigeo, Iwamura Yasuo, Watanabe Yasuhiro, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   80 巻 ( 0 ) 頁: 802-804   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  492. Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates 査読有り

    Riemann T, Christen J, Kaschner A, Laades A, Hoffmann A, Thomsen C, Iwaya M, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   80 巻 ( 0 ) 頁: 3093-3095   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  493. Effect of n-type modulation doping on the photoluminescence of GaN/Al0 査読有り

    Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Appl. Phys. Lett.   80 巻 ( 0 ) 頁: 1373-1375   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  494. Optical absorption in polarized Ga1-xInxN/GaN quantum wells 査読有り

    Wetzel Christian, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   41 巻 ( 0 ) 頁: 2010/11/14   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  495. Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells 査読有り

    Wetzel C, Nelson J, Kamiyama S, Amano H, Akasaki I

    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures   20 巻 ( 0 ) 頁: 216-218   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  496. Critical issues in AlxGa1-xN growth 査読有り

    Amano Hiroshi, Akasaki Isamu

    Optical Materials Amsterdam Netherlands   19 巻 ( 0 ) 頁: 219-222   2002年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  497. Novel aspects of the growth of nitrides by MOVPE 査読有り

    Amano H, Akasaki I

    Journal of Physics: Condensed Matter   13 巻 ( 0 ) 頁: 6935-6944   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  498. Heteroepitaxial lateral overgrowth of GaN on periodically grooved substrates: a new approach for growing low-dislocation-density GaN single crystals 査読有り

    Detchprohm Theeradetch, Yano Masahiro, Sano Shigekazu, Nakamura Ryo, Mochiduki Shingo, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   40 巻 ( 0 ) 頁: L16-L19   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  499. Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride 査読有り

    Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Kiroyuki

    Jpn. J. Appl. Phys. Part : Letters   40 巻 ( 0 ) 頁: L1280-L1282   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  500. Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers 査読有り

    Chow W W, Amano H

    IEEE Journal of Quantum Electronics   37 巻 ( 0 ) 頁: 265-273   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  501. Fracture of AlxGa1-xN/GaN heterostructure Compositional and impurity dependence 査読有り

    Terao Shinji, Iwaya Motoaki, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   40 巻 ( 0 ) 頁: L195-L197   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  502. Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport 査読有り

    Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I

    Materials Science Forum   353-356 巻 ( 0 ) 頁: 791-794   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  503. Compensation mechanism in MOCVD and MBE grown GaN:Mg 査読有り

    Alves H, Bohm M, Hofstaetter A, Amano H, Einfeldt S, Hommel D, Hofmann D M, Meyer B K

    Physica B: Condensed Matter AmsterdamNetherlands   308-310 巻 ( 0 ) 頁: 38-41   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  504. DX-like behavior of oxygen in GaN 査読有り

    Wetzel C, Amano H, Akasaki I, Ager J W, Grzegory I, Meyer B K

    Physica B: Condensed Matter AmsterdamNetherlands   302&303 巻 ( 0 ) 頁: 23-38   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  505. Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport 査読有り

    Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I

    J. Crystal Growth   230 巻 ( 0 ) 頁: 473-476   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  506. Near K-edge absorption spectra of III-V nitrides 査読有り

    Fukui K, Hirai R, Yamamoto A, Hirayama H, Aoyagi Y, Yamaguchi S, Amano H, Akasaki I, Tanaka S

    Physica Status Solidi B: Basic Research   228 巻 ( 0 ) 頁: 461-465   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  507. Optical characterization of InGaN/GaN MQW structures without in phase separation 査読有り

    Monemar B, Paskov P P, Pozina G, Paskova T, Bergman J P, Iwaya M, Nitta S, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   228 巻 ( 0 ) 頁: 157-160   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  508. Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure 査読有り

    Kamiyama S, Iwaya M, Hayashi N, Takeuchi T, Amano H, Akasaki I, Watanabe S, Kaneko Y, Yamada N

    J. Crystal Growth   223 巻 ( 0 ) 頁: 83-91   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  509. Crystal growth of high-quality AlInN/GaN superlattices and of crack-free AlN on GaN: their possibility of high electron mobility transistor 査読有り

    Yamaguchi S, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   188 巻 ( 0 ) 頁: 895-898   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  510. Growth mechanism and characterization of low-dislocation-density AlGaN single crystals grown on periodically grooved substrates 査読有り

    Detchprohm T, Sano S, Mochizuki S, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   188 巻 ( 0 ) 頁: 799-802   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  511. Demonstration of flame detection in room light background by solar-blind AlGaN PIN photodiode 査読有り

    Hirano A, Pernot C, Iwaya M, Detchprohm T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   188 巻 ( 0 ) 頁: 293-296   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  512. High-efficiency GaN/AlxGa1-xN multi-quantum-well light emitter grown on low-dislocation density AlxGa1-xN 査読有り

    Iwaya M, Terao S, Sano T, Takanami S, Ukai T, Nakamura R, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   188 巻 ( 0 ) 頁: 117-120   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  513. Absorption spectroscopy and band structure in polarized GaN/AlxGa1-xN quantum wells 査読有り

    Wetzel C, Kasumi M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   183 巻 ( 0 ) 頁: 51-60   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  514. Control of strain in GaN by a combination of H2 and N2 carrier gases 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    J. Apl. Phys.   89 巻 ( 0 ) 頁: 7820-7824   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  515. Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant 査読有り

    Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   82 巻 ( 0 ) 頁: 137-139   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  516. Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices 査読有り

    Yamaguchi Shigeo, Kosaki Masayoshi, Watanabe Yasuyukihiro, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   79 巻 ( 0 ) 頁: 3062-3064   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  517. Control of strain in GaN using an In doping-induced hardening effect 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Kashima Takayuki, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Amano Hiroshi, Akasaki Isamu

    Physical Review B: Condensed Matter and Materials Physics   64 巻 ( 0 ) 頁: 035318/1-035318/5   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  518. Photoresponse and defect levels of AlGaN/GaN heterobipolar phototransistor grown on low-temperature AlN interlayer 査読有り

    Mouillet Robert, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   40 巻 ( 0 ) 頁: L498-L501   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  519. Metalorganic vapor phase epitaxial growth of high-quality (Al,In)N/(Al,Ga)N multiple layers on GaN 査読有り

    Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   40 巻 ( 0 ) 頁: L420-L422   2001年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  520. Mass transport of GaN and reduction of threading dislocations 査読有り

    Nitta S, Kashima T, Nakamura R, Iwaya M, Amano H, Akasaki I

    Surface Review and Letters   7 巻 ( 0 ) 頁: 561-564   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  521. Electrical conductivity of low-temperature-deposited Al01Ga09N interlayer 査読有り

    Hayashi Nobuaki, Kamiyama Satoshi, Takeuchi Tetsuya, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu, Watanabe Satoshi, Kaneko Yawara, Yamada Norihide

    Jpn. J. Appl. Phys.   39 巻 ( 0 ) 頁: 6493-6495   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  522. Radiative recombination in (In,Ga)N/GaN multiple quantum wells 査読有り

    Bergman J P, Monemar B, Pozina G, Sernelius B E, Holtz P O, Amano H, Akasaki I

    Materials Science Forum   338-342 巻 ( 0 ) 頁: 1571-1574   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  523. Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method 査読有り

    Tabuchi M, Hirayama K, Takeda Y, Takeuchi T, Amano H, Akasaki I

    Applied Surface Science   159-160 巻 ( 0 ) 頁: 432-440   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  524. Mass transport and the reduction of threading dislocation in GaN 査読有り

    Nitta S, Kariya M, Kashima T, Yamaguchi S, Amano H, Akasaki I

    Applied Surface Science   159-160 巻 ( 0 ) 頁: 421-426   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  525. Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy 査読有り

    Yamaguchi S, Kariya M, Nitta S, Amano H, Akasaki I

    Applied Surface Science   159-160 巻 ( 0 ) 頁: 414-420   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  526. Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer 査読有り

    Iwaya M, Terao S, Hayashi N, Kashima T, Amano H, Akasaki I

    Applied Surface Science   159-160 巻 ( 0 ) 頁: 405-413   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  527. Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas 査読有り

    Yamaguchi S, Kariya M, Nitta S, Kashima T, Kosaki M, Yukawa Y, Amano H, Akasaki I

    J. Crystal Growth   221 巻 ( 0 ) 頁: 327-333   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  528. Structural characterization of Al1-xInxN lattice-matched to GaN 査読有り

    Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kashima Takayuki, Kato Hisaki, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   209 巻 ( 0 ) 頁: 419-423   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  529. Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells 査読有り

    Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers   39 巻 ( 0 ) 頁: 413-416   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  530. Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GaInN active layer 査読有り

    Kamiyama Satoshi, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers   39 巻 ( 0 ) 頁: 390-392   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  531. Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design 査読有り

    Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   39 巻 ( 0 ) 頁: 2425-2427   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  532. The effect of isoelectronic In-doping on the structural and optical properties of (Al)GaN grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   39 巻 ( 0 ) 頁: 2385-2388   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  533. Gain-switching of GaInN multiquantum well laser diodes 査読有り

    Marinelli C, Khrushchev I Y, Rorison J M, Penty R V, White I H, Kaneko Y, Watanabe S, Yamada N, Takeuchi T, Amano H, Akasaki I, Hasnain G, Schneider R, Wang S-Y, Tan M R T

    Electronics Letters   36 巻 ( 0 ) 頁: 83-84   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  534. Nitride-based laser diodes using thick n-AlGaN layers 査読有り

    Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y W, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Y S, Yamada N

    Journal of Electronic Materials   29 巻 ( 0 ) 頁: 302-305   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  535. Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices 査読有り

    Wetzel C, Detchprohm T, Takeuchi T, Amano H, Akasaki I

    Journal of Electronic Materials   29 巻 ( 0 ) 頁: 252-255   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  536. Characterization of initial growth stage of GaInN multilayered structure by X-ray CTR scattering and X-ray reflectivity method 査読有り

    Tabuchi Masao, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu

    Hyomen Kagaku   21 巻 ( 0 ) 頁: 162-168   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  537. Effect of low-temperature deposited layer on the growth of Group III nitrides on sapphire 査読有り

    Amano Hiroshi, Akasaki Isamu

    Hyomen Kagaku   21 巻 ( 0 ) 頁: 126-133   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  538. Effect on GaN/Al017Ga083N and Al005Ga095N/Al017Ga083N quantum wells by isoelectronic in-doping during metalorganic vapor phase epitaxy 査読有り

    Kariya Michihiko, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   39 巻 ( 0 ) 頁: L143-L145   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  539. Improvement of structural and optical properties of GaN and AlGaN using isoelectronic In doping 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Institute of Physics Conference Series   166 巻 ( 0 ) 頁: 471-474   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  540. Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells 査読有り

    Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I

    J. Apl. Phys.   88 巻 ( 0 ) 頁: 2677-2681   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  541. Multiple peak spectra from InGaN/GaN multiple quantum wells 査読有り

    Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   80 巻 ( 0 ) 頁: 85-89   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  542. InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport 査読有り

    Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I

    Appl. Phys. Lett.   77 巻 ( 0 ) 頁: 1638-1640   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  543. Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   76 巻 ( 0 ) 頁: 876-878   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  544. Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant 査読有り

    Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I

    Appl. Phys. Lett.   76 巻 ( 0 ) 頁: 3388-3390   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  545. Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers 査読有り

    Chow W W, Amano H, Akasaki I

    Appl. Phys. Lett.   76 巻 ( 0 ) 頁: 1647-1649   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  546. Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain 査読有り

    Shapiro N A, Kim Y, Feick H, Weber E R, Perlin P, Yang J W, Akasaki I, Amano H

    Physical Review B: Condensed Matter and Materials Physics   62 巻 ( 0 ) 頁: R16318-R16321   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  547. Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells 査読有り

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   62 巻 ( 0 ) 頁: R13302-R13305   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  548. Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study 査読有り

    Hai P N, Chen W M, Buyanova I A, Monemar B, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   62 巻 ( 0 ) 頁: R10607-R10609   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  549. Magneto-optical studies of the 088-eV photoluminescence emission in electron-irradiated GaN 査読有り

    Wagner Mt, Buyanova I A, Thinh N Q, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   62 巻 ( 0 ) 頁: 16572-16577   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  550. Localized vibrational modes in GaN:O tracing the formation of oxygen DX-like centers under hydrostatic pressure 査読有り

    Wetzel C, Amano H, Akasaki I, Ager J W III, Grzegory I, Topf M, Meyer B K

    Physical Review B: Condensed Matter and Materials Physics   61 巻 ( 0 ) 頁: 8202-8206   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  551. Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga1-xInxN/GaN quantum-well structures 査読有り

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   61 巻 ( 0 ) 頁: 2159-2163   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  552. Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes 査読有り

    Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   39 巻 ( 0 ) 頁: L387-L389   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  553. Fabrication and characterization of GaN-based laser diode grown on thick n-AlGaN contact layer 査読有り

    Takeuchi T, Detchprohm T, Yano M, Yamaguchi M, Hayashi N, Iwaya M, Isomura K, Kimura K, Amano H, Akasaki I, Kaneko Y, Watanabe S, Yamaoka Y, Shioda R, Hidaka T, Kaneko Y, Yamada N

    Physica Status Solidi A: Applied Research   176 巻 ( 0 ) 頁: 31-34   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  554. Spectral study of photoluminescence from GaInN/GaN MQWs using CW and time-resolved measurements 査読有り

    Watanabe S, Yamada N, Yamada Y, Taguchi T, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   216 巻 ( 0 ) 頁: 335-339   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  555. Photoluminescence investigations of AlGaN on GaN epitaxial films 査読有り

    Meyer Bruno K, Steude G, Goldner A, Hoffmann A, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   216 巻 ( 0 ) 頁: 187-191   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  556. X-ray interference and crystal truncation rod observation of GaN and GaInN layers grown on sapphire with AlN buffer layer 査読有り

    Tabuchi Masao, Takeda Yoshikazu, Matsumoto Nobuhiro, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers   38 巻 ( 0 ) 頁: 281-284   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  557. Correlation of vibrational modes and DX-like centers in GaN:O 査読有り

    Wetzel C, Ager J W III, Topf M, Meyer B K, Amano H, Akasaki I

    Physica B: Condensed Matter Amsterdam   273-274 巻 ( 0 ) 頁: 109-112   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  558. Mg acceptors in GaN Dependence of the g-anisotropy on the doping concentration 査読有り

    Hofmann Detlev M, Burkhardt Wolfgang, Leiter Frank, Von Forster Walter, Alves Helder, Hofstaetter Albrecht, Meyer Bruno K, Romanov Nikolai G, Amano Hiroshi, Akasaki Isamu

    Physica B: Condensed Matter Amsterdam   273-274 巻 ( 0 ) 頁: 43-45   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  559. Energy loss rate of excitons in GaN 査読有り

    Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I

    Physica B: Condensed Matter Amsterdam   272 巻 ( 0 ) 頁: 409-411   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  560. Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer 査読有り

    Amano H, Iwaya M, Hayashi N, Kashima T, Nitta S, Wetzel C, Akasaki I

    Physica Status Solidi B: Basic Research   216 巻 ( 0 ) 頁: 683-689   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  561. Discrete Stark-like ladder in piezoelectric GaInN/GaN quantum wells 査読有り

    Wetzel C, Kasumi M, Detchprohm T, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   216 巻 ( 0 ) 頁: 399-403   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  562. Improvement of low-intensity ultraviolet photodetectors based on AlGaN with low threading dislocation density 査読有り

    Pernot Cyril, Hirano A, Iwaya M, Detchprohm T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   176 巻 ( 0 ) 頁: 147-151   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  563. Study on electroluminescence spectrum and waveguide loss of GaInN multiple quantum well lasers 査読有り

    Kaneko Y, Shioda R, Yamada N, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   176 巻 ( 0 ) 頁: 137-140   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  564. GaN-based MQW light emitting diodes 査読有り

    Kato H, Koide N, Hirano A, Koike M, Amano H, Akasaki I

    Institute of Physics Conference Series   162 巻 ( 0 ) 頁: 31-35   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  565. Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    J. Apl. Phys.   85 巻 ( 0 ) 頁: 7682-7688   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  566. Piezoelectric Franz-Keldysh effect in strained (Ga,In)N/GaN heterostructures 査読有り

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    J. Apl. Phys.   85 巻 ( 0 ) 頁: 3786-3791   1999年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  567. Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy 査読有り

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   75 巻 ( 0 ) 頁: 4106-4108   1999年

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    記述言語:英語   掲載種別:研究論文