Updated on 2021/04/18

写真a

 
AMANO, Hiroshi
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Professor
Title
Professor
Contact information
メールアドレス

Degree 1

  1. Doctor of Engineering ( 1989.1   Nagoya University ) 

Research Interests 8

  1. Light emitting diodelaser diode, High power and high frequency transistor, Solar cells, Nano structure, Crystal growth of compound semiconductors, Semiconductor device physics

  2. Light emitting diodelaser diode

  3. Nano structure

  4. Semiconductor device physics

  5. Crystal growth of compound semiconductors

  6. High power and high frequency transistor

  7. ナノ構造

  8. Solar cells

Research Areas 1

  1. Others / Others  / Electrrical and Electronic Materials Engineering

Current Research Project and SDGs 1

  1. Crystal growth and device fabrications of group III nitride semiconductors

Research History 19

  1. Institute of Materials and Systems for Sustainability   Center for Integrated Research of Future Electronics   Director of CIRFE

    2015.10

      More details

    Country:Japan

  2. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section   Director

    2015.10

  3. Institute of Materials and Systems for Sustainability   Center for Integrated Research of Future Electronics   Director of CIRFE

    2015.10

  4. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section   Director

    2015.10

  5. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section   Professor

    2015.10

  6. 名城大学特別栄誉教授

    2015.7

      More details

    Country:Japan

  7. Meijo University

    2015.7

  8. 名古屋市立大学 客員教授

    2015.4 - 2016.3

      More details

    Country:Japan

  9. 名古屋大学特別教授

    2015.3

      More details

    Country:Japan

  10. Nagoya University

    2015.3

  11. Tsinghua University, China

    2014.11

      More details

    Country:China

  12. Tsinghua University, China   Professor Emeritus

    2014.11

  13. Nagoya University   Graduate School of Engineering Graduate School of Engineering

    2011.4

  14. Nagoya University   Graduate School of Engineering Graduate School of Engineering

    2011.4

  15. Nagoya University   Graduate School of Engineering, Department of Electrical Engineering and Computer Science   Professor

    2010.4 - 2015.10

      More details

    Country:Japan

  16. Professor, Meijo University

    2002.4 - 2010.3

      More details

    Country:Japan

  17. Associate Professor

    1998.4 - 2002.3

      More details

    Country:Japan

  18. Assistant Professor, Meijo University

    1992.4 - 1998.3

      More details

    Country:Japan

  19. Research Associate, Nagoya University

    1988.4 - 1992.3

      More details

    Country:Japan

▼display all

Education 3

  1. Nagoya University   Graduate School, Division of Engineering   Department of Electrical and Electornics Engineering

    1985.4 - 1988.3

      More details

    Country: Japan

  2. Nagoya University   Graduate School, Division of Engineering   Department of Electrical and Electronics Enginnering

    1983.4 - 1985.3

      More details

    Country: Japan

  3. Nagoya University   Faculty of Engineering   Department of Electronics

    1979.4 - 1983.3

      More details

    Country: Japan

Professional Memberships 28

  1. 照明学会   名誉会員

    2016.9

  2. APS   Fellow

    2015.9

  3. 日本工学アカデミー   会員

    2015.6

  4. 日本化学会   名誉会員

    2015.6

  5. NAE(United States National Academy of Engineering)

    2015.6

  6. The Institue of Electrical Engineers of Japan

    2015.5

  7. 日本表面科学会   特別栄誉会員

    2015.5

  8. 日本物理学会   名誉会員

    2015.4

  9. The Institue of Electronics, Information and Communication Engineering

    2015.3

  10. Material Research Society   Regular Member

    2010.1

  11. SPIE

  12. Japan Society for Applied Physics

  13. OSA

  14. Institute of Physics

  15. The Institue of Electrical Engineers of Japan

  16. The Institue of Electronics, Information and Communication Engineering

  17. 照明学会

  18. 日本表面科学会

  19. 日本物理学会

  20. 日本工学アカデミー

  21. 日本化学会

  22. Japan Society for Applied Physics

  23. SPIE

  24. OSA

  25. NAE(United States National Academy of Engineering)

  26. Material Research Society

  27. Institute of Physics

  28. APS

▼display all

Committee Memberships 48

  1. IWUMD-2017   組織委員長  

    2016.10 - 2017.12   

  2. IWUMD-2017   組織委員長  

    2016.10 - 2017.12   

  3. International Solid State Lighting Alliance   国際諮問委員  

    2016.8 - 2019.8   

      More details

    Committee type:学協会

  4. International Solid State Lighting Alliance   国際諮問委員  

    2016.8 - 2019.8   

      More details

    Committee type:学協会

  5. OPIC2017   組織委員  

    2016.8 - 2017.6   

      More details

    Committee type:学協会

  6. OPIC2017   組織委員  

    2016.8 - 2017.6   

      More details

    Committee type:学協会

  7. 国立研究会開発法人産業術総合研究所   柱冠フェロー  

    2016.8 - 2017.3   

      More details

    Committee type:政府

  8. 国立研究会開発法人産業術総合研究所   柱冠フェロー  

    2016.8 - 2017.3   

      More details

    Committee type:政府

  9. 国際物理オリンピック日本大会   組織委員  

    2016.5 - 2021.4   

      More details

    Committee type:その他

  10. 国際物理オリンピック日本大会   組織委員  

    2016.5 - 2021.4   

      More details

    Committee type:その他

  11. 日本結晶成長学会   評議員  

    2016.4 - 2019.3   

      More details

    Committee type:学協会

  12. 日本結晶成長学会   評議員  

    2016.4 - 2019.3   

      More details

    Committee type:学協会

  13. 33rd International Conference on the Physics of Semiconductors国際諮問委員会   委員長  

    2015.9 - 2016.8   

  14. ・結晶成長の科学と技術第161委員会   委員  

    2015.8 - 2016.3   

  15. 2015 Rusnanoprize Award Committee   Member  

    2015.7   

  16. 2015 Rusnanoprize Award Committee   Member  

    2015.7   

  17. 2015 Rusnanoprize Award Committee   Member  

    2015.7   

  18. Optics & Photonics International Congress 2016組織委員会   委員  

    2015.7 - 2016.6   

  19. 江崎玲於奈賞委員会   委員長  

    2015.6 - 2017.3   

  20. 江崎玲於奈賞委員会   委員長  

    2015.6 - 2017.3   

  21. 大阪大学光科学センター   特別顧問  

    2015.5 - 2017.9   

  22. 大阪大学光科学センター   特別顧問  

    2015.5 - 2017.9   

  23. ISPlasma2016/IC-PLANT2016組織委員会   委員長  

    2015.5 - 2016.4   

  24. 日本フォトニクス協議会 JPC関西,   特別顧問  

    2015.4 - 2017.3   

  25. 日本フォトニクス協議会 JPC関西,   特別顧問  

    2015.4 - 2017.3   

  26.   編集委員会委員  

    2014.7 - 2016.3   

  27.   組織委員会委員     

    2014.7 - 2015.3   

  28. ISCS2014   Regional program chair  

    2013.4   

  29. 化合物半導体国際シンポジウム   Regional program chair  

    2013.4   

  30. ISCS2014   Regional program chair  

    2013.4   

  31.   Program Committee Chair  

    2013.4 - 2014.3   

  32. OPIC2013   組織委員  

    2012.7   

  33. OPIC2013   組織委員  

    2012.7   

  34. レーザ学会   専門委員会  

    2012.5 - 2015.3   

  35. LEDIA   Conference Chair  

    2012.4   

  36. 産業用LED応用研究会   委員長  

    2012.4   

  37. LEDIA   Conference Chair  

    2012.4   

  38. 産業用LED応用研究会   委員長  

    2012.4   

  39. LEDIA   Conference Chair  

    2012.4   

  40.   プログラム委員会副委員長  

    2012.2 - 2012.4   

  41. 4th International Symposium on Growth of III-Nitrides   Program Committee Chair  

    2011.7 - 2012.7   

  42. ICMOVPE-XVI   International Advisory COmmittee  

    2011.6 - 2012.5   

  43. International Workshop on Nitride Semiconductors2012 (IWN2012)   Executive committee chair  

    2011.4 - 2012.10   

  44. 名古屋市科学館企画調査委員会   企画調査委員  

    2010.8   

  45. 名古屋市科学館企画調査委員会   企画調査委員  

    2010.8   

  46. 電子部品・材料研究専門委員会   専門委員  

    2010.5 - 2012.5   

  47. ワイドギャップ半導体光・電子デバイス第162委員会   特別顧問  

    2010.4 - 2017.3   

  48. ワイドギャップ半導体光・電子デバイス第162委員会   特別顧問  

    2010.4 - 2017.3   

▼display all

Awards 37

  1. リンショッピング大学名誉博士号

    2017.5  

     More details

    Country:Sweden

  2. バジェ大学名誉博士号

    2017.1   青色LEDの開発

    天野 浩

     More details

    Country:Guatemala

  3. オーベルニュ大学、ブレーズ・パスカル大学名誉博士号

    2016.5  

    天野 浩

     More details

    Country:France

  4. パドバ大学名誉博士号

    2016.4  

    天野 浩

     More details

    Country:Italy

  5. モンゴル国立大学名誉博士号

    2016.3  

    天野 浩

     More details

    Country:Mongolia

  6. 応用物理学会化合物半導体エレクトロニクス業績賞(赤﨑勇賞)

    2016.3   青色及び紫外光デバイスの開発

    天野 浩

     More details

    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  7. 丸八会顕彰

    2015.10  

     More details

    Country:Japan

  8. 第10回業績賞及び赤﨑勇賞

    2015.10   高品質窒化物半導体の創出と青色・紫外光素子の実現

    天野 浩

     More details

    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  9. 2015 Asia Game Changers

    2015.10  

     More details

    Award type:International academic award (Japan or overseas)  Country:United States

  10. 愛知県名誉県民

    2015.9  

     More details

    Country:Japan

  11. 産学官連携功労者表彰 日本学術会議会長賞,

    2015.8   「短波長紫外LED」の開発

    天野 浩

     More details

    Country:Japan

  12. 浜松市名誉市民

    2015.7  

     More details

    Country:Japan

  13. 中日文化賞

    2015.5  

     More details

    Country:Japan

  14. 科学技術分野の文部科学大臣表彰 科学技術賞研究部門

    2015.4  

     More details

    Country:Japan

  15. 電子情報通信学会 特別功績賞

    2015.3  

     More details

    Country:Japan

  16. 日本スウェーデン協会 名誉会員

    2015.3  

     More details

    Country:Japan

  17. 名古屋市学術表彰

    2015.1  

     More details

    Country:Japan

  18. 愛知県学術顕彰

    2015.1  

     More details

    Country:Japan

  19. 静岡県民栄誉賞

    2015.1  

     More details

    Country:Japan

  20. ノーベル物理学賞

    2014.12  

     More details

    Country:Sweden

  21. 文化功労者顕彰

    2014.11  

     More details

    Country:Japan

  22. 文化勲章

    2014.11  

     More details

    Country:Japan

  23. APEX/JJAP Editorial Contribution Award

    2014.3  

     More details

    Country:Japan

  24. IOP Fellow

    2011.10  

     More details

    Country:United Kingdom

  25. IOP Fellow

    2011.10   IOP Fellow

     More details

    Country:United Kingdom

  26. ナイスステップな研究者2009

    2009.12  

     More details

    Country:Japan

  27. ナイスステップな研究者2009

    2009.12   青色及び紫外光デバイスの開発

    天野 浩

     More details

    Country:Japan

  28. 応用物理学会フェロー

    2009.9  

     More details

    Country:Japan

  29. 日本結晶成長学会論文賞

    2008.11  

     More details

    Country:Japan

  30. 第1回 P&I パテント・オブ・ザ・イヤー

    2004.11  

     More details

    Country:Japan

  31. SSDM論文賞

    2003.9  

     More details

    Country:Japan

  32. 武田賞

    2002.11  

     More details

    Country:Japan

  33. 丸文学術賞

    2001.3  

     More details

    Country:Japan

  34. 英国Rank賞

    1998.12  

  35. 応用物理学会賞C(会誌賞)

    1998.9  

     More details

    Country:Japan

  36. IEEE/LEOS Engineering Achievement Award

    1996.11  

  37. Fifth Optoelectronics Conference A Special Award

    1994.7  

▼display all

 

Papers 712

  1. Stable electrical performance of AlGaInP-based red micro-light emitting diode by controlling interfacial morphologies of metal contacts

    Lee D.H.

    Journal of Alloys and Compounds   Vol. 872   2021.8

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Journal of Alloys and Compounds  

    DOI: 10.1016/j.jallcom.2021.159629

    Scopus

  2. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

    Kumabe Takeru, Ando Yuto, Watanabe Hirotaka, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB )   2021.5

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Japanese Journal of Applied Physics  

    DOI: 10.35848/1347-4065/abd538

    Web of Science

    Scopus

  3. Experimental demonstration of GaN IMPATT diode at X-band

    Kawasaki Seiya, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Arai Manabu, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 4 )   2021.4

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Applied Physics Express  

    DOI: 10.35848/1882-0786/abe3dc

    Web of Science

    Scopus

  4. Numerical simulation of ammonothermal crystal growth of GaN-current state, challenges, and prospects

    Schimmel S.

    Crystals   Vol. 11 ( 4 )   2021.4

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Crystals  

    DOI: 10.3390/cryst11040356

    Scopus

  5. Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography.

    Avit G, Robin Y, Liao Y, Nan H, Pristovsek M, Amano H

    Scientific reports   Vol. 11 ( 1 ) page: 6754   2021.3

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Scientific Reports  

    DOI: 10.1038/s41598-021-86139-9

    Scopus

    PubMed

  6. Micro-Light Emitting Diode: From Chips to Applications

    Parbrook Peter J., Corbett Brian, Han Jung, Seong Tae-Yeon, Amano Hiroshi

    LASER & PHOTONICS REVIEWS     2021.3

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Laser and Photonics Reviews  

    DOI: 10.1002/lpor.202000133

    Web of Science

    Scopus

  7. Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

    Kangawa Yoshihiro, Kusaba Akira, Kempisty Pawel, Shiraishi Kenji, Nitta Shugo, Amano Hiroshi

    CRYSTAL GROWTH & DESIGN   Vol. 21 ( 3 ) page: 1878 - 1890   2021.3

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Crystal Growth and Design  

    DOI: 10.1021/acs.cgd.0c01564

    Web of Science

    Scopus

  8. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

    Yamada Takehiro, Ando Yuto, Watanabe Hirotaka, Furusawa Yuta, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Suda Jun, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 3 )   2021.3

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Applied Physics Express  

    DOI: 10.35848/1882-0786/abe657

    Web of Science

    Scopus

  9. Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth-A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution

    Schimmel Saskia, Tomida Daisuke, Saito Makoto, Bao Quanxi, Ishiguro Toru, Honda Yoshio, Chichibu Shigefusa, Amano Hiroshi

    CRYSTALS   Vol. 11 ( 3 ) page: 1 - 27   2021.3

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Crystals  

    DOI: 10.3390/cryst11030254

    Web of Science

    Scopus

  10. Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication

    Yasuda Hidehiro, Nishitani Tomohiro, Ichikawa Shuhei, Hatanaka Shuhei, Honda Yoshio, Amano Hiroshi

    QUANTUM BEAM SCIENCE   Vol. 5 ( 1 )   2021.3

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/qubs5010005

    Web of Science

  11. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

    Liu T., Watanabe H., Nitta S., Wang J., Yu G., Ando Y., Honda Y., Amano H., Tanaka A., Koide Y.

    APPLIED PHYSICS LETTERS   Vol. 118 ( 7 )   2021.2

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Applied Physics Letters  

    DOI: 10.1063/5.0034584

    Web of Science

    Scopus

  12. Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)

    Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

    OPTICAL MATERIALS EXPRESS   Vol. 11 ( 2 ) page: 524 - 524   2021.2

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Optical Materials Express  

    DOI: 10.1364/OME.420328

    Web of Science

    Scopus

  13. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 24 )   2020.12

     More details

    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0028516

    Web of Science

  14. The 2020 UV emitter roadmap

    Amano H.

    Journal of Physics D: Applied Physics   Vol. 53 ( 50 )   2020.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6463/aba64c

    Web of Science

    Scopus

  15. Detailed analysis of Ga-rich current pathways created in an n-Al<inf>0.7</inf>Ga<inf>0.3</inf>N layer grown on an AlN template with dense macrosteps

    Nagasawa Y.

    Applied Physics Express   Vol. 13 ( 12 )   2020.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/abcb49

    Web of Science

    Scopus

  16. Surface passivation of light emitting diodes: From nano-size to conventional mesa-etched devices

    Seong Tae-Yeon, Amano Hiroshi

    SURFACES AND INTERFACES   Vol. 21   2020.12

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Surfaces and Interfaces  

    DOI: 10.1016/j.surfin.2020.100765

    Web of Science

    Scopus

  17. State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods

    Evropeitsev Evgenii A., Kazanov Dmitrii R., Robin Yoann, Smirnov Alexander N., Eliseyev Ilya A., Davydov Valery Yu., Toropov Alexey A., Nitta Shugo, Shubina Tatiana V., Amano Hiroshi

    SCIENTIFIC REPORTS   Vol. 10 ( 1 ) page: 19048   2020.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-020-76042-0

    Web of Science

    Scopus

    PubMed

  18. Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy

    Robin Y., Bournet Q., Avit G., Pristovsek M., Andre Y., Trassoudaine A., Amano H.

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 35 ( 11 )   2020.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/abad73

    Web of Science

    Scopus

  19. Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: From injection efficiency to mid-gap state generation

    PIVA F.

    Photonics Research   Vol. 8 ( 11 ) page: 1786 - 1791   2020.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/PRJ.401785

    Web of Science

    Scopus

  20. Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate.

    Yang X, Pristovsek M, Nitta S, Liu Y, Honda Y, Koide Y, Kawarada H, Amano H

    ACS applied materials & interfaces   Vol. 12 ( 41 ) page: 46466 - 46475   2020.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsami.0c11883

    Web of Science

    Scopus

    PubMed

  21. Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes

    Zhang Ziyi, Kushimoto Maki, Horita Masahiro, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 15 )   2020.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0027789

    Web of Science

    Scopus

  22. Optical properties of neodymium ions in nanoscale regions of gallium nitride

    Sato S.I.

    Optical Materials Express   Vol. 10 ( 10 ) page: 2614 - 2623   2020.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/OME.401765

    Web of Science

    Scopus

  23. Single-chip imaging system that simultaneously transmits light

    Wang Yongjin, Gao Xumin, Fu Kang, Qin Feifei, Zhu Hongbo, Liu Yuhuai, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 10 ) page: .   2020.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  24. Single-chip imaging system that simultaneously transmits light

    Wang Y.

    Applied Physics Express   Vol. 13 ( 10 )   2020.10

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Applied Physics Express  

    DOI: 10.35848/1882-0786/abb786

    Scopus

  25. High frequency GaN Devices for Realizing Wirelss Power Transmission System Invited Reviewed

      Vol. 103 ( 10 ) page: 1016 - 1022   2020.10

     More details

    Authorship:Lead author   Language:Japanese   Publishing type:Research paper (scientific journal)  

    Other Link: https://www.journal.ieice.org/bin/pdf_link.php?fname=k103_10_1016&lang=J&year=2020

  26. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

    Sato S.i.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   Vol. 479   page: 7 - 12   2020.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.nimb.2020.06.007

    Web of Science

    Scopus

  27. Low interface state densities at Al<inf>2</inf>O<inf>3</inf>/GaN interfaces formed on vicinal polar and non-polar surfaces

    Ando Y.

    Applied Physics Letters   Vol. 117 ( 10 )   2020.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0010774

    Web of Science

    Scopus

  28. Design and characterization of a low-optical-loss UV-C laser diode

    Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 9 ) page: .   2020.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  29. Design and characterization of a low-optical-loss UV-C laser diode

    Zhang Z.

    Japanese Journal of Applied Physics   Vol. 59 ( 9 )   2020.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abaac6

    Scopus

  30. Increasing the Luminescence Efficiency of Long-Wavelength (In,Ga)N Quantum Well Structures by Electric Field Engineering Using an (Al,Ga)N Capping Layer

    Vichi Stefano, Robin Yoann, Sanguinetti Stefano, Pristovsek Markus, Amano Hiroshi

    PHYSICAL REVIEW APPLIED   Vol. 14 ( 2 )   2020.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevApplied.14.024018

    Web of Science

  31. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

    Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 8 ) page: .   2020.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  32. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

    Kimura T.

    Japanese Journal of Applied Physics   Vol. 59 ( 8 )   2020.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/aba0d5

    Scopus

  33. Growth of high-quality GaN by halogen-free vapor phase epitaxy

    Kimura T.

    Applied Physics Express   Vol. 13 ( 8 )   2020.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/aba494

    Scopus

  34. Growth of high-quality GaN by halogen-free vapor phase epitaxy

    Kimura Taishi, Kataoka Keita, Uedono Akira, Amano Hiroshi, Nakamura Daisuke

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 8 )   2020.8

     More details

    Publishing type:Research paper (scientific journal)  

    Web of Science

  35. Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF MATERIALS CHEMISTRY C   Vol. 8 ( 25 ) page: 8668 - 8675   2020.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/d0tc01369b

    Web of Science

    Scopus

  36. Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p-n diodes

    Nakano T.

    Applied Physics Letters   Vol. 117 ( 1 )   2020.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0010664

    Scopus

  37. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 7 ) page: .   2020.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  38. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

    Sandupatla A.

    Applied Physics Express   Vol. 13 ( 7 )   2020.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/ab93a0

    Scopus

  39. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

    Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 217 ( 14 )   2020.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201900955

    Web of Science

    Scopus

  40. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

    Liu Q.

    Journal of Crystal Growth   Vol. 539   2020.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2020.125643

    Scopus

  41. Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

    Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 6 ) page: .   2020.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  42. Halide vapor phase epitaxy of p-Type Mg-doped GaN utilizing MgO

    Ohnishi K.

    Applied Physics Express   Vol. 13 ( 6 )   2020.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/ab9166

    Scopus

  43. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

    Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 539   2020.6

     More details

    Publishing type:Research paper (scientific journal)  

    Web of Science

  44. Oxygen Incorporation Kinetics in Vicinal m(10-10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy

    Yosho Daichi, Shintaku Fumiya, Inatomi Yuya, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 14 ( 6 )   2020.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssr.202000142

    Web of Science

    Scopus

  45. Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors.

      Vol. 11 ( 5 )   2020.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/mi11050519

    Scopus

    PubMed

  46. Improving the Leakage Characteristics and Efficiency of GaN-based Micro-Light-Emitting Diode with Optimized Passivation

    Lee Hoon, Lee Jung-Hoon, Park Jin-Seong, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 5 )   2020.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2162-8777/ab915d

    Web of Science

    Scopus

  47. Impact of high-Temperature implantation of Mg ions into GaN

    Takahashi M.

    Japanese Journal of Applied Physics   Vol. 59 ( 5 )   2020.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ab8b3d

    Scopus

  48. Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE

    Shintaku Fumiya, Yosho Daichi, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 5 ) page: .   2020.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  49. Impact of high-temperature implantation of Mg ions into GaN

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 5 ) page: .   2020.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  50. Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE

    Shintaku F.

    Applied Physics Express   Vol. 13 ( 5 )   2020.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/ab8723

    Scopus

  51. Improved Leakage and Output Characteristics of Pixelated LED Array for Headlight application

    Lee Sang-Youl, Kang Kiman, Lee Eunduk, Jo Yoomin, Kim Doyub, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 4 )   2020.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2162-8777/ab8b6f

    Web of Science

  52. Experimental observation of high intrinsic thermal conductivity of AlN

    Cheng Zhe, Koh Yee Rui, Mamun Abdullah, Shi Jingjing, Bai Tingyu, Huynh Kenny, Yates Luke, Liu Zeyu, Li Ruiyang, Lee Eungkyu, Liao Michael E., Wang Yekan, Yu Hsuan Ming, Kushimoto Maki, Luo Tengfei, Goorsky Mark S., Hopkins Patrick E., Amano Hiroshi, Khan Asif, Graham Samuel

    PHYSICAL REVIEW MATERIALS   Vol. 4 ( 4 )   2020.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevMaterials.4.044602

    Web of Science

  53. Tungsten carbide layers deposited on graphite substrates via a wet powder process as anti-parasitic-reaction coatings for reactor components in GaN growth

    Nakamura Daisuke, Kimura Taishi, Itoh Kenji, Fujimoto Naoki, Nitta Shugo, Amano Hiroshi

    CRYSTENGCOMM   Vol. 22 ( 15 ) page: 2632 - 2641   2020.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/c9ce01971e

    Web of Science

  54. Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

    Lee Sang-Youl, Moon Ji Hyung, Moon Yong-Tae, Kim Chung Song, Park Sunwoo, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    IEEE PHOTONICS TECHNOLOGY LETTERS   Vol. 32 ( 7 ) page: 438 - 441   2020.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/LPT.2020.2977376

    Web of Science

    Scopus

  55. Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers

    Hainey Mel Jr., Robin Yoann, Avit Geoffrey, Amano Hiroshi, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 535   2020.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2020.125522

    Web of Science

    Scopus

  56. Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

    Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201900553

    Web of Science

    Scopus

  57. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

    Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J., Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 116 ( 12 )   2020.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5145017

    Web of Science

    Scopus

  58. Effects of Ultraviolet Wavelength and Ambient Temperature on Reliability of Silicones in InAlGaN-Based Light-Emitting-Diode Package

    Kim Ho-Young, Lee Jong-Woo, Jun Duk-Jin, Song Sung-Joo, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 3 )   2020.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2162-8777/ab7c40

    Web of Science

  59. Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

    Yamamoto K, Nakano K, Tanaka A, Honda Y, Ando Y, Ogura M, Matsumoto M, Anada S, Ishikawa Y, Amano H, Hirayama T

    Microscopy (Oxford, England)   Vol. 69 ( 1 ) page: 1-10   2020.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1093/jmicro/dfz037

    Scopus

    PubMed

  60. Using SiO<inf>2</inf>-based distributed Bragg reflector to improve the performance of AlGaInP-based red micro-light emitting diode

    Lee S.Y.

    ECS Journal of Solid State Science and Technology   Vol. 9 ( 3 )   2020.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2162-8777/ab74c3/pdf

    Scopus

  61. Using SiO2-Based Distributed Bragg Reflector to Improve the Performance of AlGaInP-Based Red Micro-Light Emitting Diode

    Lee Sang-Youl, Moon Ji Hyung, Moon Yong-Tae, Choi Byoungjun, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 3 )   2020.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2162-8777/ab74c3

    Web of Science

  62. Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode

    Sato Daiki, Honda Anna, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

    MICROELECTRONIC ENGINEERING   Vol. 223   2020.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mee.2020.111229

    Web of Science

    Scopus

  63. Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode

    Lee Da-Hoon, Kang Daesung, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 53 ( 4 )   2020.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6463/ab52d0

    Web of Science

  64. Oblique-angle deposited SiO<inf>2</inf>/Al omnidirectional reflector for enhancing the performance of AlGaN-based ultraviolet light-emitting diode

    Lee J.

    ECS Journal of Solid State Science and Technology   Vol. 9 ( 2 )   2020.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2162-8777/ab709a

    Scopus

  65. Heavy Mg Doping to Form Reliable Rh Reflective Ohmic Contact for 278 nm Deep Ultraviolet AlGaN-Based Light-Emitting Diodes

    Lee Sang-Youl, Han Dae-Seob, Lee Yong-Gyeong, Choi Kwang-Ki, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 6 )   2020.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2162-8777/aba914

    Web of Science

  66. Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

    Abhinay S., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 1 )   2020.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab65cd

    Web of Science

    Scopus

  67. Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum

    Sato D.

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   Vol. 38 ( 1 )   2020.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1116/1.5120417

    Scopus

  68. Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    2D MATERIALS   Vol. 7 ( 1 )   2020.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/2053-1583/ab46e6

    Web of Science

    Scopus

  69. Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN

    Dinh D.V.

    Semiconductor Science and Technology   Vol. 35 ( 3 )   2020

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/ab63f1

    Scopus

  70. Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

    Ye Z.

    Japanese Journal of Applied Physics   Vol. 59 ( 2 )   2020

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ab6fb0

    Scopus

  71. Damage-Free Plasma Etching to Enhance Performance of AlGaInP-Based Micro-Light Emitting Diode

    Lee Sang-Youl, Lee Eunduk, Moon Ji-Hyung, Choi Byoungjun, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    IEEE PHOTONICS TECHNOLOGY LETTERS   Vol. 32 ( 17 ) page: 1041 - 1044   2020

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/LPT.2020.3010820

    Web of Science

    Scopus

  72. Characterization of AlGaN multiple-quantum-wells grown on <i>c</i>-plane AlN/sapphire templates with macro-steps

    Kojima Kazunobu, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    Journal of the Japanese Association for Crystal Growth   Vol. 47 ( 3 )   2020

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    <p>  The microscopic structural and optical characteristics of AlGaN light-emitting diodes (LEDs) fabricated on the AlN templates with dense macrosteps are shown to clarify the origin of their high internal quantum efficiency of radiation (IQE). The cross-sectional transmission electron microscopy observations under the high-angle annular dark field scanning mode and microscopic energy dispersive X-ray spectroscopy revealed that the AlGaN cladding layer under the AlGaN quantum well (QW) layer had a microscopic compositional modulation, which originates from the macrosteps at the AlN template surface. Moreover, Ga-rich portions in the cladding layer behaved as current micropaths, and the micropaths are connected with the carrier localization structure formed in QWs. The in-plane cathodoluminescence (CL) spectroscopy showed a significant inhomogeneity of the CL characteristics. The gentle slopes at the sample surface showed brighter emissions with a lower peak photon energy, confirming the carrier localization. This carrier localization structure in the QWs combined with the current micropaths in the cladding layer can increase the IQE as well as external quantum efficiency of the AlGaN LEDs.</p>

    DOI: 10.19009/jjacg.47-3-04

    CiNii Article

  73. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

    Liao Yaqiang, Chen Tao, Wang Jia, Ando Yuto, Yang Xu, Watanabe Hirotaka, Hirotani Jun, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Chen Kevin J., Amano Hiroshi

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     page: 349 - 352   2020

     More details

    Publishing type:Research paper (scientific journal)  

    Web of Science

  74. Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy alpha-particle detection

    Sandupatia A., Arulkurnaran S., Ranjan K., Ng G. I, Murumu P. P., Kennedy J., Deki M., Nitta S., Honda Y., Amano H.

    2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020)     2020

     More details

    Publishing type:Research paper (scientific journal)  

    Web of Science

  75. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    GALLIUM NITRIDE MATERIALS AND DEVICES XV   Vol. 11280   2020

     More details

    Publishing type:Research paper (scientific journal)   Publisher:Proceedings of SPIE - The International Society for Optical Engineering  

    DOI: 10.1117/12.2544704

    Web of Science

    Scopus

  76. Development of laser slicing technology for GaN substrates

    KAWAGUCHI Daisuke, TANAKA Atsushi, YUI Toshiki, IGASAKI Yasunori, WANI Yotaro, AMANO Hiroshi

    The Proceedings of Mechanical Engineering Congress, Japan   Vol. 2020 ( 0 )   2020

     More details

    Publishing type:Research paper (scientific journal)   Publisher:The Japan Society of Mechanical Engineers  

    DOI: 10.1299/jsmemecj.2020.S16306

    CiNii Article

  77. Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe -Type n-Contact and Reflective Bonding Pad

    Kim Jong-Ho, Lee Yong Won, Im Hyeong-Seop, Oh Chan-Hyoung, Shim Jong-In, Kang Daesung, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 1 )   2019.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2.0462001JSS

    Web of Science

    Scopus

  78. Preface-JSS Focus Issue on Recent Advances inWide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki

    Ren Fan, Mishra Kailash C., Amano Hiroshi, Collins John, Han Jung, Im Won Bin, Kneissl Michael, Seong Tae-Yeon, Setlur Anant, Suski Tadek, Zych Eugeniusz

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 1 )   2019.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2.0452001JSS

    Web of Science

    Scopus

  79. Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

    Nagasawa Yosuke, Sugie Ryuichi, Kojima Kazunobu, Hirano Akira, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    JOURNAL OF APPLIED PHYSICS   Vol. 126 ( 21 )   2019.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5125623

    Web of Science

    Scopus

  80. Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS     2019.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201900554

    Web of Science

  81. A 271.8 nm deep-ultraviolet laser diode for room temperature operation

    Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 12 )   2019.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/ab50e0

    Web of Science

  82. Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

    Dinh Duc V., Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 34 ( 12 )   2019.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/ab4d2c

    Web of Science

  83. Low Voltage High-Energy alpha-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ranjan Kumud, Ng Geok Ing, Murmu Peter P., Kennedy John, Nitta Shugo, Honda Yoshio, Deki Manato, Amano Hiroshi

    SENSORS   Vol. 19 ( 23 )   2019.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/s19235107

    Web of Science

    Scopus

    PubMed

  84. Improvement in the Reliability of AlGaInP-Based Light-Emitting Diode Package Using Optimal Silicone and Leadframe Structure

    Kim Ho-Young, Lee Jong Woo, Moon Young Min, Oh Jeong Tak, Jeong Hwan-Hee, Song June-O, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 1 )   2019.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2.0332001JSS

    Web of Science

  85. Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

    Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SCIENTIFIC REPORTS   Vol. 9   2019.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-019-52067-y

    Web of Science

  86. Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application

    Kang Daesung, Oh Jeong-Tak, Song June-O, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 10 )   2019.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/ab45d1

    Web of Science

  87. V-shaped dislocations in a GaN epitaxial layer on GaN substrate

    Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

    AIP ADVANCES   Vol. 9 ( 9 )   2019.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5114866

    Web of Science

  88. Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    MICROELECTRONICS RELIABILITY   Vol. 100   2019.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.microrel.2019.113418

    Web of Science

    Scopus

  89. Via-Hole-Type Flip-Chip Packaging to Improve the Thermal Characteristics and Reliability of Blue Light Emitting Diodes

    Kim Ho Young, Lim Chang Man, Kim Ki Seok, Oh Jeong Tak, Jeong Hwan-Hee, Song June-O, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 8 ( 9 ) page: Q165 - Q170   2019.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2.0171909jss

    Web of Science

    Scopus

  90. Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes

    Kim Dae-Hyun, Park Young Soo, Kang Daesung, Kim Kyoung-Kook, Seong Tae-Yeon, Amano Hiroshi

    JOURNAL OF ALLOYS AND COMPOUNDS   Vol. 796   page: 146-152   2019.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jallcom.2019.05.070

    Web of Science

  91. Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

    Sarzynski Marcin, Grzanka Ewa, Grzanka Szymon, Targowski Grzegorz, Czernecki Robert, Reszka Anna, Holy Vaclav, Nitta Shugo, Liu Zhibin, Amano Hiroshi, Leszczynski Mike

    MATERIALS   Vol. 12 ( 16 )   2019.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/ma12162583

    Web of Science

  92. Influence of Temperature-Dependent Substrate Decomposition on Graphene for Separable GaN Growth

    Park Jeong-Hwan, Lee Jun-Yeob, Park Mun-Do, Min Jung-Hong, Lee Je-Sung, Yang Xu, Kang Seokjin, Kim Sang-Jo, Jeong Woo-Lim, Amano Hiroshi, Lee Dong-Seon

    ADVANCED MATERIALS INTERFACES     2019.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/admi.201900821

    Web of Science

  93. Fabrication of a GaInN/GaInP/GaInAs/Ge four-junction solar cell using the wafer bonding technology

    Takahashi Kazuya, Shinoda Ryoji, Mitsufuji Syun, Iwaya Motoaki, Kamiyama Satoshi, Takeuchi Tetsuya, Hattori Tomokazu, Akasaki Isamu, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 7 )   2019.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab26ad

    Web of Science

    Scopus

  94. Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Torigoe Kazuhisa, Kushimoto Maki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 7 )   2019.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab2657

    Web of Science

    Scopus

  95. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

    Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 516   page: 63-66   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.03.025

    Web of Science

  96. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current

    Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 114 ( 23 )   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5097767

    Web of Science

  97. Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

    Liu Qiang, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC )   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab124e

    Web of Science

    Scopus

  98. Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming

    Robin Yoann, Hemeret Francois, D'Inca Gillian, Pristovsek Markus, Trassoudaine Agnes, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC )   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab06ae

    Web of Science

    Scopus

  99. Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors

    Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC )   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab06b9

    Web of Science

    Scopus

  100. Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC )   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab106c

    Web of Science

    Scopus

  101. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates

    Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC )   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab1250

    Web of Science

    Scopus

  102. Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

    Nan Hu, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC )   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab1252

    Web of Science

    Scopus

  103. Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285nm deep-ultraviolet LEDs grown on AlN templates having macrosteps

    Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Ipponmatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 6 )   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/ab21a9

    Web of Science

  104. Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

    Evropeitsev Evgeniy A., Robin Yoann, Shubina Tatiana V., Bae Si-Young, Nitta Shugo, Kirilenko Demid A., Davydov Valery Y., Smirnov Alexandr N., Toropov Alexey A., Kushimoto Maki, Ivanov Sergey V., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 256 ( 6 )   2019.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201800648

    Web of Science

  105. Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 514   page: 13-13   2019.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.02.058

    Web of Science

  106. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

    Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 512   page: 78-83   2019.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.02.013

    Web of Science

  107. Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE

    Duc V Dinh, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 512   page: 100-104   2019.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.02.020

    Web of Science

  108. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

    Kneissl Michael, Seong Tae-Yeon, Han Jung, Amano Hiroshi

    NATURE PHOTONICS   Vol. 13 ( 4 ) page: 233-244   2019.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41566-019-0359-9

    Web of Science

  109. GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

    Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    AIP ADVANCES   Vol. 9 ( 4 )   2019.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5087491

    Web of Science

  110. Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method

    Yamada Jumpei, Usami Shigeyoshi, Ueda Yuki, Honda Yoshio, Amano Hiroshi, Maruyama Takahiro, Naritsuka Shigeya

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 4 )   2019.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/aafe70

    Web of Science

    Scopus

  111. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

    Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 509   page: 50-53   2019.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.12.007

    Web of Science

  112. GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors

    Cai Wei, Yuan Jialei, Ni Shuyu, Shi Zheng, Zhou Weidong, Liu Yuhuai, Wang Yongjin, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 3 )   2019.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/ab023c

    Web of Science

  113. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

    Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

    MATERIALS   Vol. 12 ( 5 )   2019.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/ma12050689

    Web of Science

  114. Morphological study of InGaN on GaN substrate by supersaturation

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 508   page: 58-65   2019.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.12.028

    Web of Science

  115. How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

    Hu Nan, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 507   page: 205 - 208   2019.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.11.013

    Web of Science

    Scopus

  116. Pole figure analysis from electron backscatter diffraction-an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy

    Hainey Mel Jr., Robin Yoann, Amano Hiroshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/aafb26

    Web of Science

    Scopus

  117. Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/aafdb9

    Web of Science

    Scopus

  118. Compositional control of homogeneous InGaN nanowires with the In content up to 90%

    Zeghouane Mohammed, Avit Geoffrey, Andre Yamina, Bougerol Catherine, Robin Yoann, Ferret Pierre, Castelluci Dominique, Gil Evelyne, Dubrovskii Vladimir G., Amano Hiroshi, Trassoudaine Agnes

    NANOTECHNOLOGY   Vol. 30 ( 4 ) page: 044001   2019.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6528/aaec39

    Web of Science

    Scopus

    PubMed

  119. Localization and transient emission properties in InGaN/ GaN quantum wells of different polarities within core- shell nanorods

    Robin Y., Evropeitsev E. A., Shubina T. V., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Eliseyev I. A., Bae S. Y., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

    NANOSCALE   Vol. 11 ( 1 ) page: 193 - 199   2019.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/c8nr05863f

    Web of Science

    Scopus

  120. Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps

    Kojima K., Nagasawa Y., Hirano A., Ippommatsu M., Honda Y., Amano H., Akasaki I., Chichibu S. F.

    APPLIED PHYSICS LETTERS   Vol. 114 ( 1 )   2019.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5063735

    Web of Science

    Scopus

  121. 286 nm monolithic multicomponent system

    Yuan Jialei, Jiang Yan, Shi Zheng, Gao Xumin, Wang Yongjin, Sun Xiaojuan, Li Dabing, Liu Yuhuai, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 1 )   2019.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/aaf3aa

    Web of Science

    Scopus

  122. Observation of Dopant Concentration in GaN Semiconductor by High Sensitivity Electron Holography

    Nakano Kiyotaka, Honda Yoshio, Amano Hiroshi, Matsumoto Miko, Anada Satoshi, Yamamoto Kazuo, Ishikawa Yukari, Hirayama Tsukasa, Ando Yuto, Ogura Masaya, Tanaka Atsushi

    Materia Japan   Vol. 58 ( 2 ) page: 103-103   2019

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.2320/materia.58.103

    CiNii Article

  123. Electronic structure analysis of core structures of threading dislocations in GaN

    Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)     page: .   2019

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  124. MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire

    Dinh Duc V., Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 502   page: 14-18   2018.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.09.001

    Web of Science

  125. What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

    Robin Y., Pristovsek M., Amano H., Oehler F., Oliver R. A., Humphreys C. J.

    JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 18 )   2018.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5047240

    Web of Science

    Scopus

  126. Simultaneous Growth of Various InGaN/GaN Core-Shell Microstructures for Color Tunable Device Applications

    Robin Yoann, Liao Yaqiang, Pristovsek Markus, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 215 ( 21 )   2018.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201800361

    Web of Science

    Scopus

  127. Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method

    Kashima Masahiro, Sato Daiki, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi, Iijima Hokuto, Meguro Takashi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 36 ( 6 )   2018.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1116/1.5048061

    Web of Science

    Scopus

  128. Full-duplex light communication with a monolithic multicomponent system

    Wang Yongjin, Wang Xin, Zhu Bingcheng, Shi Zheng, Yuan Jialei, Gao Xumin, Liu Yuhuai, Sun Xiaojuan, Li Dabing, Amano Hiroshi

    LIGHT-SCIENCE & APPLICATIONS   Vol. 7   2018.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41377-018-0083-0

    Web of Science

  129. Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

    Avit Geoffrey, Zeghouane Mohammed, Andre Yamina, Castelluci Dominique, Gil Evelyne, Bae Si-Young, Amano Hiroshi, Trassoudaine Agnes

    CRYSTENGCOMM   Vol. 20 ( 40 ) page: 6207 - 6213   2018.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/c8ce01177j

    Web of Science

    Scopus

  130. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

    Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 10 )   2018.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.105501

    Web of Science

  131. High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 498   page: 377-380   2018.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.07.015

    Web of Science

  132. Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Murakami Satoshi, Kushimoto Maki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 9 )   2018.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.091001

    Web of Science

  133. Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

    Barry Ousmane I, Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 12 ( 8 )   2018.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssr.201800124

    Web of Science

    Scopus

  134. Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering

    Ueoka Yoshihiro, Deki Meneto, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 7 )   2018.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.070302

    Web of Science

    Scopus

  135. Study on the Main-Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN-Based DUV-LEDs

    Kiho Yamada, Yosuke Nagasawa, Shoko Nagai, Akira Hirano, Masamichi Ippommatsu, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki

    Physica Status Solidi (A) Applications and Materials Science   Vol. 215 ( 10 )   2018.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Wiley-VCH Verlag  

    The main chain structure of optically isotropic amorphous fluorine resin for encapsulating AlGaN-based deep-ultraviolet LEDs (λ &lt
    300 nm) is studied. One type of amorphous fluorine resin has a five-membered ring with a single oxygen atom and the other has that one with two oxygen atoms. Reliability testing is performed using AlGaN-based LEDs of 262 and 289 nm. For the resin with two oxygen atoms in the ring, visible damage to the electrode and significantly increased leakage current are considered to been caused by the photolysis of the ring induced by irradiation with deep-ultraviolet light. In contrast, electrode damage and increased leakage are not observed in the case of the resin with the single-oxygen ring.

    DOI: 10.1002/pssa.201700525

    Web of Science

    Scopus

  136. Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

    Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

    SCIENTIFIC REPORTS   Vol. 8   2018.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-018-25473-x

    Web of Science

  137. m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates

    Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    Physica Status Solidi (A) Applications and Materials Science   Vol. 215 ( 9 )   2018.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Wiley-VCH Verlag  

    In this study, GaN m-plane Schottky barrier diodes are fabricated by metalorganic vapor-phase epitaxy (MOVPE) on several off-angle gallium nitride (GaN) substrates, and the off-cut angle dependence of impurity incorporation is investigated. We show that the MOVPE layer on the substrate inclined 5° toward the [000–1] direction has extremely low impurity incorporation. These results provide important suggestions for the fabrication of m-plane power devices.

    DOI: 10.1002/pssa.201700645

    Web of Science

    Scopus

  138. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

    Xu Yang, Shugo Nitta, Markus Pristovsek, Yuhuai Liu, Kentaro Nagamatsu, Maki Kushimoto, Yoshio Honda, Hiroshi Amano

    Applied Physics Express   Vol. 11 ( 5 )   2018.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japan Society of Applied Physics  

    Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

    DOI: 10.7567/APEX.11.051002

    Web of Science

    Scopus

  139. Transferrable monolithic multicomponent system for near-ultraviolet optoelectronics

    Chuan Qin, Xumin Gao, Jialei Yuan, Zheng Shi, Yuan Jiang, Yuhuai Liu, Yongjin Wang, Hiroshi Amano

    Applied Physics Express   Vol. 11 ( 5 )   2018.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japan Society of Applied Physics  

    A monolithic near-ultraviolet multicomponent system is implemented on a 0.8-mm-diameter suspended membrane by integrating a transmitter, waveguide, and receiver into a single chip. Two identical InGaN/Al0.10Ga0.90N multiple-quantum well (MQW) diodes are fabricated using the same process flow, which separately function as a transmitter and receiver. There is a spectral overlap between the emission and detection spectra of the MQW diodes. Therefore, the receiver can respond to changes in the emission of the transmitter. The multicomponent system is mechanically transferred from silicon, and the wire-bonded transmitter on glass experimentally demonstrates spatial light transmission at 200 Mbps using non-return-to-zero on–off keying modulation.

    DOI: 10.7567/APEX.11.051201

    Web of Science

    Scopus

  140. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Sugawara, Yong-Zhao Yao, Yukari Ishikawa

    APPLIED PHYSICS LETTERS   Vol. 112 ( 18 )   2018.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AMER INST PHYSICS  

    Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that lc pure screw dislocations are related to the reverse leakage in vertical p-n diodes. Published by AIP Publishing.

    DOI: 10.1063/1.5024704

    Web of Science

    Scopus

  141. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures

    Oh Jeong-Tak, Lee Sang-Youl, Moon Yong-Tae, Moon Ji Hyung, Park Sunwoo, Hong Ki Yong, Song Ki Young, Oh Chan-Hyoung, Shim Jong-In, Jeong Hwan-Hee, Song June-O, Amano Hiroshi, Seong Tae-Yeon

    OPTICS EXPRESS   Vol. 26 ( 9 ) page: 11194-11200   2018.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/OE.26.011194

    Web of Science

  142. The 2018 GaN power electronics roadmap

    H. Amano, Y. Baines, E. Beam, Matteo Borga, T. Bouchet, Paul R Chalker, M. Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L. Di Cioccio, Bernd Eckardt, Takashi Egawa, P. Fay, Joseph J Freedsman, L. Guido, Oliver Häberlen, Geoff Haynes, Thomas Heckel, Dilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng Jiang, H. Kawai, Dan Kinzer, Martin Kuball, Ashwani Kumar, Kean Boon Lee, Xu Li, Denis Marcon, Martin März, R. McCarthy, Gaudenzio Meneghesso, Matteo Meneghini, E. Morvan, A. Nakajima, E. M.S. Narayanan, Stephen Oliver, Tomás Palacios, Daniel Piedra, M. Plissonnier, R. Reddy, Min Sun, Iain Thayne, A. Torres, Nicola Trivellin, V. Unni, Michael J Uren, Marleen Van Hove, David J Wallis, J. Wang, J. Xie, S. Yagi, Shu Yang, C. Youtsey, Ruiyang Yu, Enrico Zanoni, Stefan Zeltner, Yuhao Zhang

    Journal of Physics D: Applied Physics   Vol. 51 ( 16 )   2018.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Institute of Physics Publishing  

    Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

    DOI: 10.1088/1361-6463/aaaf9d

    Web of Science

    Scopus

  143. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy Reviewed

    XuYang, ShugoNitta, KentaroNagamatsu, Si-YoungBae, Ho-JunLee, YuhuaiLiu, MarkusPristovsek, YoshioHonda, HiroshiAmano

    Journal of Crystal Growth   Vol. 482 ( 15 ) page: 1-8   2018.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Hexagonal boron nitride (h-BN) was directly grown on sapphire substrate using alternating ammonia
    (NH3) and triethylboron (TEB) supply (pulsed mode) in metalorganic vapor phase epitaxy. The best condition
    is when just enough NH3 is supplied to fully convert the TEB within one cycle. Excess NH3 caused
    islands on h-BN film surface while a lack of NH3 does not form h-BN at all. The epitaxial relationship
    between grown h-BN layer and c-plane sapphire was confirmed to be [0001]h-BN // [0001]sapphire and
    [10-10]h-BN // [11-20]sapphire. It is known that, compared to AlN, BN requires higher V/III ratios for good crystallinity, which due to severe gas-phase reactions is difficult to achieve using continuous supply. Thus using pulsed mode the FWHM of the symmetric (0002) diffraction was almost halved and the
    growth rate was several times faster.

  144. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

    Xu Yang, Shugo Nitta, Kentaro Nagamatsu, Si-Young Bae, Ho-Jun Lee, Yuhuai Liu, Markus Pristovsek, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 482 ( 15 ) page: 1 - 8   2018.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)   Publisher:ELSEVIER SCIENCE BV  

    Hexagonal boron nitride (h-BN) was directly grown on sapphire substrate using alternating ammonia (NH3) and triethylboron (TEB) supply (pulsed mode) in metalorganic vapor phase epitaxy. The best condition is when just enough NH3 is supplied to fully convert the TEB within one cycle. Excess NH3 caused islands on h-BN film surface while a lack of NH3 does not form h-BN at all. The epitaxial relationship between grown h-BN layer and c-plane sapphire was confirmed to be [0001](h-BN)||[0001](sapphire) and [10-10](h-BN)||[11-20](sapphire). It is known that, compared to AlN, BN requires higher V/III ratios for good crystallinity, which due to severe gas-phase reactions is difficult to achieve using continuous supply. Thus using pulsed mode the FWHM of the symmetric (0002) diffraction was almost halved and the growth rate was several times faster. (C) 2017 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2017.10.036

    Web of Science

    Scopus

  145. Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes

    Yates Luke, Pavlidis Georges, Graham Samuel, Usami Shigeyoshi, Nagamatsu Kentaro, Honda Yoshio, Amano Hiroshi

    PROCEEDINGS OF THE 17TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2018)     page: 831-837   2018

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  146. Advantages of GaN and Related Materials over Si and Issues to be Solved

    AMANO Hiroshi

    Vacuum and Surface Science   Vol. 61 ( 9 ) page: 565-567   2018

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1380/vss.61.565

    CiNii Article

  147. Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN

    Nakano Takashi, Araidai Masaaki, Shiraishi Kenji, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8   Vol. 86 ( 12 ) page: 41 - 49   2018

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/08612.0041ecst

    Web of Science

    Scopus

  148. DFT modeling of carbon incorporation in GaN(0001) and GaN(000(1)over-bar) metalorganic vapor phase epitaxy Reviewed

    Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano

    APPLIED PHYSICS LETTERS   Vol. 111   page: 141602/1-5   2017.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The carbon incorporation mechanism in GaN(0001) and GaN(000 (1) over bar) during MOVPE was investigated using density functional theory (DFT) calculations. The results confirm that the crucial factors for carbon incorporation are Fermi level pinning and accompanying surface band bending. In addition, the lattice symmetry has a strong dependence on the stability of carbon in a few subsurface layers, which results from interactions between the impurities and surface states. It was shown that these effects are responsible for facilitating or hindering the incorporation of impurities and dopants. The influence of diluent gas species (hydrogen or nitrogen) on carbon incorporation was discussed.

    DOI: 10.1063/1.4991608

  149. DFT modeling of carbon incorporation in GaN(0001) and GaN(000(1)over-bar) metalorganic vapor phase epitaxy

    Kempisty Pawel, Kangawa Yoshihiro, Kusaba Akira, Shiraishi Kenji, Krukowski Stanislaw, Bockowski Michal, Kakimoto Koichi, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 111 ( 14 )   2017.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4991608

    Web of Science

    Scopus

  150. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

    Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano

    APPLIED PHYSICS LETTERS   Vol. 111   page: 122102/1-5   2017.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.

    DOI: 10.1063/1.4994627

  151. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

    Sang Liwen, Ren Bing, Sumiya Masatomo, Liao Meiyong, Koide Yasuo, Tanaka Atsushi, Cho Yujin, Harada Yoshitomo, Nabatame Toshihide, Sekiguchi Takashi, Usami Shigeyoshi, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 111 ( 12 )   2017.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4994627

    Web of Science

    Scopus

  152. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations Reviewed

    Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, and Hiroshi Amano

    Applied Physics Express   Vol. 10   page: 082101/1-4   2017.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.10.082101

  153. Low cost high voltage GaN polarization superjunction field effect transistors

    H. Kawai, S. Yagi, S. Hirata, F. Nakamura, T. Saito, Y. Kamiyama, M. Yamamoto, H. Amano, V. Unni, E. M. S. Narayanan

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 ) page: 1600834/1-10   2017.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)   Publisher:WILEY-V C H VERLAG GMBH  

    A comprehensive overview of the novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept, and a cost-effective approach towards manufacturing these high performance devices are presented. Current challenges impeding wider adoption of GaN power switching transistors in applications, and the latest results of the scaled-up PSJ-FETs from POWDEC KK, are also discussed. The article also presents hard-switching characteristics of 400-800V boost converter, constructed using a PSJ-FET grown on sapphire substrate, and the future direction of GaN power semiconductor technology based on monolithic integration for advanced power electronics.

    DOI: 10.1002/pssa.201600834

    Web of Science

    Scopus

  154. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE Reviewed

    Atsushi Tanaka, Ousmane1 Barry, Kentaro Nagamatsu, Junya Matsushita, Manato Deki, Yuto Ando, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi A   Vol. 214 ( 8 ) page: 1600829/1-5   2017.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    In this study, GaN m-plane Schottky barrier diodes fabricated with a metalorganic vapor-phase epitaxy on a GaN substrate were investigated using emission microscope, photoluminescence, and cathodoluminescence. In addition, facet dependence of leakage current under reverse-biased condition was observed. We showed that the leakage-current distribution was caused by the facet dependence of the carrier concentration and oxygen concentration. These results can provide important suggestions for the fabrication of m-plane devices. (a) four-faceted hillocks on m-plane GaN MOVPE sample, facet dependence of (b) leakage current and (c) PL peak intensity of the m-plane GaN Schottky barrier diode.

    DOI: 10.1002/pssa.201600829

  155. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes Invited Reviewed

    Shigeyoshi Usami, Ryosuke Miyagoshi, Atsushi Tanaka, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi A   Vol. 214 ( 8 ) page: 1600837/1-5   2017.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We investigate the influence of crystal defects on p-type GaN grown by metalorganic vapor phase epitaxy. Sets of p-type GaN films were grown on sapphire substrates and on free-standing GaN (F-GaN) substrates simultaneously using various Et-Cp2Mg flow rates. Although there is a difference of two orders of magnitude between the threading dislocation densities of p-type GaN grown on sapphire and F-GaN substrates, there is no significant difference in hole concentration. However, there are problems with the surface morphology of p-type GaN grown on sapphire. The deterioration of the surface was caused by the difference in nanopipe density. The electrical properties of a p-n junction diode formed on sapphire with a high density of nanopipes were observed using emission microscopy under both forward- and reverse-bias conditions. Our results demonstrate that the nanopipes are electrically inactive, and that other types of threading dislocation have more influence on the current-voltage characteristics.

    DOI: 10.1002/pssb.201600722

  156. Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants Reviewed

    Si-Young Bae, Kaddour Lekhal, Ho-Jun Lee, Jung-Wook Min, Dong-Seon Lee, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi B   Vol. 254 ( 8 ) page: 1600722/1-7   2017.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Injecting current with a uniform carrier concentration is important for applications with three-dimensional architectures such as vertical power devices or displays. In III-nitride nanostructures, dopants not only incorporate differently depending on the surface orientation but can also seriously affect the kinetic equilibrium shapes of the nanorods. Herein, we report selective-area growth of doped GaN nanorods grown by pulsed-mode metalorganic chemical vapor deposition. Two dopants, Si and Mg, were employed as donor and acceptor atoms, respectively, for a mono-doping approach. Furthermore, a mixed flow of Si and Mg was supplied for a co-doping approach. We compared the morphological effects and growth rates of each doped GaN nanorod array. Then, we proposed appropriate growth mechanisms for the doped GaN nanorods on the basis of our structural characterizations. These results might extend the morphological functionality of GaN nanorods by including doping and may also provide an appropriate foundation for the design of nanostructure-based electronic or photonic devices.

    DOI: 10.1002/pssb.201600722

  157. Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system Reviewed

    Kentaro Nagamatsu, Shugo Nitta, Zheng Ye, Hirofumi Nagao, Shinichi Miki, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi B   Vol. 254 ( 8 ) page: 1600737/1-4   2017.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201600737

  158. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations

    Tanikawa T.

    Applied Physics Express   Vol. 10 ( 8 )   2017.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.10.082101

    Scopus

  159. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

    Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Physica Status Solidi (A) Applications and Materials Science  

    DOI: 10.1002/pssa.201600837

    Web of Science

    Scopus

  160. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

    Tanaka Atsushi, Barry Ousmane, Nagamatsu Kentaro, Matsushita Junya, Deki Manato, Ando Yuto, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201600829

    Web of Science

    Scopus

  161. Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity Reviewed

    Guangxu Ju, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    Applied Physics Letters   Vol. 110 ( 26 ) page: 262105/1-5   2017.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4990687

  162. Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity

    Ju Guangxu, Tabuchi Masao, Takeda Yoshikazu, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 110 ( 26 )   2017.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4990687

    Web of Science

    Scopus

  163. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer Reviewed

    Zheng Sun, Peifeng Song, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   Vol. 468   page: 866-869   2017.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2017.01.31

  164. Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer Reviewed

    S.-Y.Bae, K. Lekhal, H.-J.Lee, T.Mitsunari, J.-W.Min, D.-S.Leed, M.Kushimoto, Y.Honda, H.Amano

    Journal of Crystal Growth   Vol. 468   page: 110-113   2017.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2016.10.032

  165. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer Reviewed

    Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Akira Tamura, Takafumi Suzuki, Maki KUshimoto, Yoshio HOnda, and Hiroshi Amano

    Journal of Crystal Growth   Vol. 468   page: 547-551   2017.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2016.11.116

  166. Effect of V/III ratio on the surface morphology and electrical properties of m–plane ( 101¯0 ) GaN homoepitaxial layers Reviewed

      Vol. 468   page: 552-556   2017.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We have investigated the effect of V/III ratio on the surface morphology, impurity concentration and electrical properties of m–plane (101¯0) Gallium Nitride (GaN) homoepitaxial layers. Four-sided pyramidal hillocks are observed on the nominally on-axis m–plane GaN films. Hillocks sizes relatively increase by increasing the V/III ratio. All facets of pyramidal hillocks exhibit well-defined step-terrace features. Secondary ion mass spectrometry depth profiles reveal that carbon impurities decrease by increasing the V/III ratio while the lowest oxygen content is found at an optimized V/III ratio of 900. Vertical Schottky barrier diodes fabricated on the m–GaN samples were characterized. Low leakage current densities of the order of 10−10 A/cm2 at −5 V are obtained at the optimum V/III ratio. Oxygen impurities and screw-component dislocations around hillocks are found to have more detrimental impact on the leakage current mechanism.

    DOI: 10.1016/j.jcrysgro.2016.12.012

  167. Annealing effect on threading dislocations in a GaN grown on Si substrate Reviewed

      Vol. 468   page: 835-838   2017.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Effect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a (111)Si substrate was investigated by photoluminescence (PL) and transmission electron microscopy (TEM) analyses. The PL spectra suggested that the density of gallium vacancy is not changed by the heat treatment up to 700 °C. In the TEM specimen, we had dislocation half loops generated by off-axis propagation of the threading dislocation. We found that the half-loop of c-type dislocation shrinks/moves by a repetitive RTA at 600–700 °C. In contrast, we could find no remarkable changes in the a-type or a+c-type dislocations.

    DOI: 10.1016/j.jcrysgro.2017.01.001

  168. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer

    Sun Z.

    Journal of Crystal Growth   Vol. 468   page: 866 - 869   2017.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2017.01.031

    Web of Science

    Scopus

  169. Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output Reviewed

    Michiko Kaneda, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   Vol. 56   page: 061002   2017.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.56.061002

  170. III-nitride core-shell nanorod array on quartz substrates Reviewed

    Si-Young Bae, Jung-Wook Min, Hyeong-Yong Hwang, Kaddour Lekhal, Ho-Jun Lee, Young-Dahl Jho, Dong-Seon Lee, Yong-Tak Lee, Nobuyuki Ikarashi, Yoshio Honda & Hiroshi Amano

    Scientific reports   Vol. 7   page: 45345   2017.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: doi:10.1038/srep45345

  171. III-nitride core-shell nanorod array on quartz substrates

    Si-Young Bae, Jung-Wook Min, Hyeong-Yong Hwang, Kaddour Lekhal, Ho-Jun Lee, Young-Dahl Jho, Dong-Seon Lee, Yong-Tak Lee, Nobuyuki Ikarashi, Yoshio Honda, Hiroshi Amano

    SCIENTIFIC REPORTS   Vol. 7   page: 45345   2017.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)   Publisher:NATURE PUBLISHING GROUP  

    We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal-organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core-shell nanorods were then investigated. The nanorods were highly crystalline and the core-shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates.

    DOI: 10.1038/srep45345

    Web of Science

    Scopus

    PubMed

  172. Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template

    Yasuda Toshiki, Takeuchi Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 10 ( 2 )   2017.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.10.025502

    Web of Science

    Scopus

  173. Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template Reviewed

    Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Applied Physics Express   Vol. 10   page: 025502   2017.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.4567/APEX.10.025502

  174. From the dawn of gan-based light-emitting devices to the present day

    Amano H.

    Handbook of Solid-State Lighting and LEDs     page: 3-12   2017.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1201/9781315151595

    Scopus

  175. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 degrees C by metalorganic vapor phase epitaxy

    Katsuno Shota, Yasuda Toshiki, Hagiwara Koudai, Koide Norikatsu, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.56.015504

    Web of Science

  176. Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching Reviewed

    Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, and Hiroshi Amano

    Physica Status Solidi b   Vol. 253   page: 1700387(1-7)   2017

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    A gallium nitride (GaN) epitaxial layer with a low density of threading dislocations is successfully grown on a silicon substrate by using in situ gas
    etching. Silicon nitride (SiNx) film is used as a mask, and ammonia is intermittently supplied in hydrogen ambient during the etching. After etching,
    high-density deep pits appeared on the surface of a GaN template layer and corresponded to the threading dislocations in the layer. In this novel method,
    before growing an additional GaN layer on the template GaN layer, a second SiNx layer is deposited after the etching process, and this layer prevents GaN nuclei from growing on the upper side-walls of the pits. By using this method, the density of threading dislocations of the GaN surface is reduced to 6.7E7 cm2. This method is cost effective, completing all the necessary processes in one growth run without taking samples out from a metalorganic chemical vapor deposition (MOCVD) reactor.

    DOI: 10.1002/pssb.201700387

  177. Development of Sustainable Smart Society based on Transformative Electronics

    Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     page: .   2017

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  178. Progress and prospect of growth of wide-band-gap group III nitrides

    Hiroshi Amano

    Topics in Applied Physics   Vol. 133   page: 1 - 9   2017

     More details

    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Springer Verlag  

    GaAs, InP, and their related compound semiconductors can be grown on native substrates, whereas such growth was not possible for group III nitride semiconductors in the 1970s and 1980s. Despite this drawback, researchers were able to use novel functions of group III nitride semiconductors by growing their thin films on nonnative substrates such as sapphire SiC and Si.

    DOI: 10.1007/978-981-10-3755-9_1

    Web of Science

    Scopus

  179. From the Dawn of GaN-Based Light-Emitting Devices to the Present Day

    Amano Hiroshi

    HANDBOOK OF SOLID-STATE LIGHTING AND LEDS     page: 3-11   2017

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Web of Science

  180. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy Reviewed

    Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 56   page: 015504   2016.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.7567/JJAP.56.015504

  181. Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer Reviewed

    Improved crystal quality of semipolar (10 1¯ 3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer

    Journal of Crystal Growth   Vol. 454   page: 114-120   2016.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1016/j.jcrysgro.2016.09.004

  182. Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE Reviewed

    Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   Vol. 447   page: 55-61   2016.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The selective area growth (SAG) of GaN was implemented on patterned GaN/sapphire templates by hydride vapor phase epitaxy (HVPE) to fabricate regular arrays of Ga-polar GaN microrods. The control of growth parameters such as H2/N2 carrier gas ratio, growth temperature, and absolute NH3/HCl gas flow resulted in changes in the growth morphology.

    DOI: 10.1016/j.jcrysgro.2016.05.008

  183. Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study Reviewed

    Shoko Nagai, Kiho Yamada, Akira Hirano, Masamichi Ippommatsu, Masahiro Ito, Naoki Morishima, Ko Aosaki, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   Vol. 55   page: 082101/1-7   2016.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: http://doi.org/10.7567/JJAP.55.082101

  184. Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy Reviewed

    Tran Thien Duc, Galia Pozina, Hiroshi Amano, Bo Monemar, Erik Janz´en, and Carl Hemmingsson

    PHYSICAL REVIEW   Vol. B94   page: 045206/1-8   2016.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Deep levels in Mg-doped GaN grown by metal organic chemical vapor deposition, undoped GaN grown by MOCVD, and halide vapor phase epitaxy-grown GaN have been studied using deep level transient spectroscopy and minority charge carrier transient spectroscopy.

    DOI: 10.1103/PhysRevB.94.045206

  185. Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction Reviewed

    Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction   Vol. 55 ( 5S ) page: 05FL03/1-5   2016.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  186. Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity Reviewed

    Daiki Sato, Tomohiro Nishitani, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 55 ( 5S ) page: 05FH05/1-4   2016.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  187. Study of radiation detection properties of GaN pn diode Reviewed

    Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano

    Japanese Journal of Applied Physics   Vol. 55   page: 05FJ02/1-3   2016.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Recently, GaN, which has remarkable properties as a material for optical devices and high power electron devices, has also attracted attention as a material for radiation detectors. We previously suggested the use of BGaN as a neutron detector material. However, the radiation detection characteristics of GaN itself are not yet adequately understood. For realizing a BGaN neutron detector, the understanding of the radiation detection characteristics of GaN, which is a base material of the neutron detector, is important. In this study, we evaluated the radiation detection characteristics of GaN. We performed I V and energy spectrum measurements under alpha ray, gamma ray, and thermal neutron irradiations to characterize the radiation detection characteristics of a GaN diode. The obtained results indicate that GaN is an effective material for our proposed new BGaN-based neutron detector.

  188. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode Reviewed

    Byung Oh Jung, Si-Young Bae, Seunga Lee, Sang Yun Kim, Jeong Yong Lee, Yoshio Honda and Hiroshi Amano

    Nanoscale Research Letters   Vol. 11   2016.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.

    DOI: 10.1186/s11671-016-1441-6

  189. Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer Reviewed

    Zheng Sun, Kentaro Nagamatsu, Marc Olsson, Peifeng Song, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics,   Vol. 55 ( 5S ) page: 05FB06/1-5   2016.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  190. Growth of semipolar $(1\bar{1}01)$ high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001) Reviewed

    Maki Kushimoto, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 55 ( 5S ) page: 05FA10/1-4   2016.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  191. Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering Reviewed

    Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Tadashi Mitsunari, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 55 ( 5S ) page: 05FD03/1-4   2016.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Using an in situ laser absorption and scattering method, the surface roughness and incorporation of In in InGaN layers grown by metal organic vapor-phase epitaxy (MOVPE) were monitored.

  192. Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials

    Hiroshi Amano

    Progress in Crystal Growth and Characterization of Materials   Vol. 62   page: 126–135   2016.4

     More details

    Authorship:Lead author   Language:English  

    DOI: https://doi.org/10.1016/j.pcrysgrow.2016.04.006

  193. Structural and optical study of core–shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum Reviewed

      Vol. 55 ( 5S ) page: 05FG03/1-8   2016.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We report on the material and optical properties of core–shell InGaN layers grown on GaN nanorod arrays. The core–shell InGaN layers were well grown on polarization-reduced surfaces such as semipolar pyramids and nonpolar sidewalls. In addition, to compensate the biaxial strain between GaN and InGaN layers, we grew interlayers underneath a thick InGaN layer. Here, the interlayers were composed of multiple superlattice structures. We could observe that the indium composition of core–shell InGaN structures increased with the number of interlayers. This indicates that the absorption energy band of InGaN alloys can be better matched to the spectral irradiance of the solar spectrum in nature. We also implemented a simulation of Ga-polar and nonpolar InGaN-based solar cells based on the indium composition obtained from the experiments. The result showed that nonpolar InGaN solar cells had a much higher efficiency than Ga-polar InGaN solar cells with the same thickness of the absorption layer.

  194. Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy Reviewed

    Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 55   page: 05FF03/1-5   2016.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  195. Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy Reviewed

    Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano and Koichi Kakimoto

    Japanese Journal of Applied Physics   Vol. 55 ( 5S ) page: 05FM01/1-4   2016.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  196. Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations Reviewed

    Seunga Lee, Yoshio Honda, Hiroshi Amano, Jongjin Jang and Okhyun Nam

    Japanese Journal of Applied Physics Rapid Communications   Vol. 55 ( 3 ) page: 030306/1-4   2016.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Using a SiN insertion layer to reduce dislocations, enhanced photovoltaic properties could be obtained in pin InGaN GaN heterojunction solar cell. To investigate the influence of the dislocations on the photovoltaic behaviors, a sample grown without SiN insertion layer was identically prepared for comparison. From optical properties measurements, the reduction in the number of non-radiative centers and a stronger In localization effect was shown in the sample with SiN insertion layer. However, the quantum confined stark effect was almost negligible in both the samples.

  197. Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells Reviewed

    Lee, Seunga; Honda, Yoshio; Amano, Hiroshi

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 49 ( 2 ) page: 025103   2016.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    To understand the effect of piezoelectric fields on carrier dynamics, we numerically investigated a simple p-GaN/i-InxGa1-xN/n-GaN solar cell structure. A reliable simulation model was obtained by comparing the experimental and simulated results in advance.

  198. Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition Reviewed

    Si-Young Bae, Byung Oh Jung, Kaddour Lekhal, Sang Yun Kim, Jeong Yong Lee, Dong-Seon Lee, Manato Deki, Yoshio Honda and Hiroshi Amano

    CrystEngComm   Vol. 18   page: 1505-1514   2016.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    . Unlike the thick and high (or middle)-quality GaN templates normally used, nanorod growth was performed on an ultrathin and low-quality AlN/Si platform. Using kinetically controlled growth conditions and a patterning process, exceptionally long GaN nanorods were achieved with high geometric precision.

    DOI: 10.1039/C5CE02056E

  199. The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer Reviewed

    Zheng Sun, Akio Ohta, Seiichi Miyazaki, Kentaro Nagamatsu, Hojun Lee, Marc Olsson, Zheng Ye, Manato Deki, Yoshio Honda, and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 55   page: 010303/1-3   2016.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Previously, we reported a growth method by MOVPE using a single two-dimensional growth step, resulting in 1.2-micron thick crack-free GaN directly grown on 6H-SiC substrate. The introduction of Al-treatment prior to the standard GaN growth step resulted in improved surface wetting of gallium on the SiC substrate.

  200. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation Invited Reviewed

    Hiroshi Amano

    Rev. Mod. Phys.   Vol. 87 ( 4 ) page: 1133-1138   2015.12

     More details

    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    This is a personal history of one of the Japanese researchers engaged in developing a method for
    growing GaN on a sapphire substrate, paving the way for the realization of smart television and
    display systems using blue LEDs. The most important work was done in the mid to late 1980s. The
    background to the author's work and the process by which the technology enabling the growth of
    GaN and the realization of p-type GaN was established are reviewed.

  201. Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer Reviewed

    Tadashi Mitsunari, Ho Jun Lee, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   Vol. 431   page: 60-63   2015.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We obtained single-crystalline semipolar (10View the MathML source1¯3)GaN on a nominal Si(001) substrate with sputtered AlN using the directional feature of sputtering.

    DOI: 10.1016/j.jcrysgro.2015.08.027

  202. Time-resolved photoluminescence properties of hybrids based on inorganic AlGaN/GaN quantum wells and colloidal ZnO nanocrystals Reviewed

    M. Forsberg, C. Hemmingsson, H. Amano, G. Pozina

    Superlattices and Microstructures   Vol. 87   page: 38-41   2015.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Dynamic properties are studied for the AlGaN/GaN quantum well (QW) structures with and without the coating of colloidal ZnO nanocrystals (NCs). The QW exciton recombination rate was reduced in such hybrids compared to the bare QW structure only in the sample with the thinnest cap layer of 3 nm. Assuming that one of the recombination mechanisms in this hybrid is non-radiative resonant energy transfer (NRET) between the QW and the energy acceptor material i.e. ZnO NCs, the maximum pumping efficiency was estimated to be 0.42 at 60 K. The NRET effect is, however, vanished after several months despite that the hybrid structures are composed of chemically stable components.

    DOI: doi:10.1016/j.spmi.2015.07.017

  203. Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges Reviewed

    Toshikiu Yasuda, Kento Hayashi, Syouta Katsuno, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, and Hiroshi Amano

    Physica Status Solidi a   Vol. 212 ( 5 ) page: 920-924   2015.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We investigated the influence of polarization charges in nitride-based semiconductors.

    DOI: 10.1002/pssa.201431730

  204. Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells Reviewed

    Hideaki Murotani, Yoichi Yamada, Yoshio Honda, and Hiroshi Amano

    Physica Status Solidi b   Vol. 252 ( 5 ) page: 940-945   2015.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The optical properties of InGaN/GaN multiple quantum wells (MQWs) have been studied by means of photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy.

    DOI: 10.1002/pssb.201451491

  205. Resonant Raman and FTIR spectra of carbon doped GaN Reviewed

    S. Ito, H. Kobayashi, K. Arak,i, K. Suzuki, N. Sawaki, K. Yamashita, Y. HOnda, H. Amano

    Journal of Crystal Grwoth   Vol. 414 ( 15 ) page: 56-60   2015.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: doi:10.1016/j.jcrysgro.2014.11.024

  206. Electrical characteristics of a-plane low-Mg-doped p-GaN Schottky contacts Reviewed

    Moe Naganawa, Toshichika Aoki, Ji-Su Son, Hiroshi Amano, Kenji Shiojima

    physica status solidi (b)   Vol. 252 ( 5 ) page: 1024–1030   2015.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Electrical characteristics of a variety of Schottky contacts formed with ten metal species on the a-plane of p-type low-Mg-doped GaN grown on r-plane sapphire substrates were studied.

    DOI: 10.1002/pssb.201451581

  207. Optically pumped lasing properties of $(1\bar{1}01)$ InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed

    Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda and Hiroshi Amano

    Applied Physics Express   Vol. 8 ( 2 ) page: 022702   2015.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We demonstrated lasing action and investigated the optical properties of (1 (1) over bar 01) multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating (1 (1) over bar 01) InGaN MQW laser diodes on (001) Si. (C) 2015 The Japan Society of Applied Physics

    DOI: doi:10.7567/APEX.8.022702

  208. Dynamic properties of excitons in ZnO/AlGaN/GaN hybrid nanostructures Reviewed

    Mathias Forsberg, Carl Hemmingsson, Hiroshi Amano , Galia Pozina

    Scientific Reports   Vol. 5   page: 7889   2015.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    III-nitride semiconductor/organic polymer hybrid heterostructures combine advantages of epitaxially grown semiconductor quantum wells (QW) with inexpensive polymers having efficient luminescence in the visible region1. Such hybrid micro-structured light emitting diodes (LED) are promising for fabrication of low-cost and highly efficient microlight sources that can be used in full-color displays, imaging systems, miniature chemical and biological sensors. In typical polyfluorene/GaN-based LED hybrids, UV emission from a GaN heterostructure down converts to the organic polymer fluorescence in the visible region via a radiative energy transfer. Overlapping between the UV luminescence and the polyfluorene absorption is required for the operation
    of these hybrids. Today, a novel class of hybrid structures is suggested, in which a non-radiative resonant energy transfer (NRET) from excitation generated in inorganic QWs to excitons in organic films can be utilized. Such LEDs might be considerably more efficient than their radiative energy transfer analogues. In addition to the necessity of a significant spectral overlap between the QW emission and the polymer absorption spectrum, these devices require that the two materials are placed in a close interaction distance of a few nm. The bottleneck is that the operation lifetime of organic/semiconductor hybrid LED structures is limited by degradation
    of polyfluorenes. Using colloidal semiconductor nanocrystals (NCs) instead of polymers can significantly improve the lifetime of such devices. In addition to superior luminescence properties, relatively low cost and chemical stability, the spectral tunability can be achieved by changing the particle chemistry and size. The efficiency of non-radiative resonance energy transfer is typically determined using transient photoluminescence
    (PL) measurements from the quenching of the QW exciton lifetime in the presence of acceptor material (i.e.
    colloidal NCs or polyfluorene). It might be correct in assumption that NRET is the only additional recombination channel appearing in hybrids compared to the bareQWstructure. However, other factors can play also a significant role. For example, surface potential effects have to be considered when non-radiative resonant energy transfer is measured using dynamic properties of the QW excitons.
    Thus, in this work we have studied and discussed the possibility of NRET in hybrid structures fabricated using ZnO NCs films coated on the top of the AlGaN/GaN QWs samples. ZnO NCs satisfies the requirement of
    absorption overlapping with GaN emission (a room temperature band gap energy is 3.3 and 3.4 eV for ZnO and GaN, respectively). Dynamic properties ofQWexcitons in the hybrids and in the bareQWsamples are analyzed in dependence on the QWs cap layer thickness.

    DOI: doi:10.1038/srep07889

  209. Development of underfilling and encapsulation for deep-ultraviolet LEDs Reviewed

    Kiho Yamada, Yuuta Furusawa, Shoko Nagai, Akira Hirano, Masamichi Ippommatsu, Ko Aosaki, Naoki Morishima, Hiroshi Amano and Isamu Akasaki

    Applied Physics Express   Vol. 8 ( 1 ) page: 012101   2015.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  



    The currently available resins for underfilling and encapsulation are limited to wavelengths longer than approximately 330 nm because almost all resins are decomposed by deep-ultraviolet light. Fluorine resins are possible materials for underfilling and encapsulation in deep-ultraviolet LEDs, and we have investigated methods of underfilling and encapsulation using such resins. Also, their durability at wavelengths of 265 and 285 nm has been studied from the photochemical viewpoint, and we propose a stable amorphous fluorine resin that is optically isotropic. Also, a trial of encapsulation using the resin has been made.

    DOI: doi:10.7567/APEX.8.012101

  210. Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region Reviewed

    Jung, Byung Oh; Bae Si-Young; Kim, Sang Yun; Lee, Seunga; Lee, Jeong Yong; Lee, Dong-Seon; Kato, Yoshihiro; Honda, Yoshio ;Amano, Hiroshi

    Nano Energy   Vol. 11   page: 294-303   2015.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Highly ordered, position-controlled gallium nitride (GaN) nanowire based multiple-quantum-wells (MQWs) core-shell architecture arrays are synthesized by metalorganic chemical vapor deposition (MOCVD). We investigate the possibility of using GaN nanowire arrays as a basal template for the growth of InxGa1-xN/GaN MQWs. The MQWs on three different crystal facets (c(-), m(-), and semipolar-plane) of GaN nanowire exhibit dissimilar structural properties. The structural characteristics of InGaN/GaN core-shell arrays are inspected by cross-sectional high-resolution transmission electron microscopy (HR-TEM). We also investigate the optical properties of MQW core-shell structure nanoarrays. The luminescent characteristics of InGaN/GaN core-shell structure arrays are determined by photoluminescence (PL) and cathodoluminescence (CL) measurements. The monochromatic CL images clearly show the light emission behavior of InGaN/GaN MQW coaxial structure. Two distinguishable light emission peaks were observed in the GaN nanowire based core-shell structure. The characteristic of light emission mainly depends on the properties of MQWs, which are generated from different crystal facets of GaN. In addition, the light emission intensity shows different behaviors depending on the area of the GaN nanowire m-plane. The results of this study suggest that GaN nanowire arrays can be used as a good alternative basal template for next-generation light-emitting diodes (LEDs).

    DOI: DOI: 10.1016/j.nanoen.2014.11.003

  211. Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy Reviewed

    Guangxu Ju, Shingo Fuchi, Masao Tabuchi, Hiroshi Amano, Isamu Akasaki

    Journal of Crystal Growth   Vol. 407   page: 68-73   2014.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Continuous in situ X-rayreflectivity(XRR)measurementswereusedtoinvestigatethegrowthprocessof
    an In0.11Ga0.89N epilayeranditssinglequantumwellgrownonc-planeGaN/sapphiretemplatesusingan
    in-house-designed metalorganicvaporphaseepitaxyinstalledinalaboratory-gradeX-raydiffract-
    ometer.Thesurfacerougheningoftheepilayerasafunctionofgrowthtimewascalculatedfromthe
    continuous in situ XRR curve.Thegrowthrate,criticalthickness hc(r) for surfaceroughening,and
    roughening ratewereobtained.Theexperimentalcriticalthickness hc(r) of theIn0.11Ga0.89N epilayer
    analyzed fromthecontinuous in situ XRR curvewas14.870.4 nm.Basedonthecalculatedtheoretical
    critical thickness hc and theexperimental hc(r,2), Fischer's modelseemstobeappropriatefordescribing
    the criticalthicknessoftheInGaN/GaN.

    DOI: 10.1016/j.jcrysgro.2014.08.023

  212. Photoemission lifetime of a negative electron affinity gallium nitride photocathode Reviewed

    Tomohiro Nishitani, Masao Tabuchi, Hiroshi Amano, Takuya Maekawa, Makoto Kuwahara and Takashi Meguro

    Journal of Vacuum Science and Technology   Vol. B32 ( 6 ) page: 06F901   2014.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    A photocathode electron source using p-type GaN semiconductor with a negative electron affinity (NEA) surface has been studied for its ability to maintain an extended NEA state. The key technology of NEA photocathodes is the formation of electric dipoles by cesium and gallium atoms on the surface, which makes it possible for photoexcited electrons in the conduction band minimum to escape into the vacuum. This means that in order to keep the electron energy spread as small as possible, the excitation photon energy should be tuned to the band gap energy. However, the NEA surface is damaged by the adsorption of residual gas and the back-bombardment of ionized residual gas by photoelectrons. The p-type GaN semiconductor was measured time evolution in quantum yield during NEA surface activation, and a lifetime of quantum yield of excitation energy corresponding to the band gap energy in comparison to the p-type GaAs as the conventional NEA photocathode. In NEA surface activation process, the quantum yield of the GaN was more than 3 orders of magnitude higher than that of the GaAs by only cesium deposition. The exposure amount of cesium in the NEA surface activation of the GaAs was 1.5 times as that of the GaN, even though the quantum yield of the GaAs was the same value as the GaN. Lifetime of NEA-photocathodes using the GaN was 21 times longer than that using the GaAs. The decrease of quantum yield of the GaAs was well correlated in the form of the exponential decrease function with a decrease time of 4.4 h, while the decrease of quantum yield of the GaN was well correlated in the form of the exponential decrease function with two decrease times of 47 and 174 h.

  213. Nature of yellow luminescence band in GaN grown on Si substrate Reviewed

    Shogo Ito, Taihei Nakagita, Nobuhiko Sawaki, Hyung Soo Ahn, Masashi Irie, Toshiki Hikosaka, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 53   page: 11RC02/1-5   2014.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: doi:10.7567/JJAP.53.11RC02

  214. Atom probe tomography study of Mg-doped GaN layers Reviewed

    S Khromov, D Gregorius, R Schiller, J Lösch, M Wahl, M Kopnarski, H Amano, B Monemar, L Hultman and G Pozina

    Nanotechnology   Vol. 25 ( 27 )   2014.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: doi:10.1088/0957-4484/25/27/275701

  215. Characterization of nonpolar a-plane InGaN/GaN multiple quantum well Reviewed

    Ji-Su Son, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 53   page: 05FL01   2014.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The characteristics of nonpolar a-plane (1120) GaN (a-GaN) grown using single and double nanopillar SiO2 masks were investigated. The two
    nanopillar SiO2 masks were directly fabricated on an r-plane sapphire substrate and a-GaN by the epitaxial lateral overgrowth (ELOG) technique.
    Through the use of the single and double nanopillar SiO2 masks, the crystalline quality and optical properties of a-GaN were markedly improved
    because of the nanoscale ELOG effect and a number of voids in the single and double nanopillar SiO2 mask areas in comparison with the planar
    sample. The submicron pit densities of the planar, single, and double nanopillar mask samples were >2 ' e9, >7e8, and >4e8cm-2,
    respectively. The internal quantum efficiency (IQE) values at room temperature of three-period InGaN/GaN multiple quantum wells (MQWs) grown
    using the planar, single, and double nanopillar masks were 45, 60, and 68% at a carrier concentration of 1.0e18cm-3, respectively.

    DOI: 10.7567/JJAP.53.05FL01

  216. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

    Guangxu Ju, Yoshihiro Kato, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    physica status solidi (c)   Vol. 11 ( 3-4 ) page: 393-396   2014.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    A set of GaN/GaInN single quantum wells (SQWs) were grown on c-plane GaN/sapphire templates using metal organic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The structural information on the interfaces and surfaces was obtained by fitting the experimental X-ray spectra and was compared between MOVPE and ALE mode. The X-ray crystal truncation rod (CTR) scattering measurement results showed that the samples grown by ALE had sharper interfaces than those grown by MOVPE. Both the X-ray reflectivity (XRR) curve-fitting results and atomic force microscope (AFM) results indicated that the surfaces of the ALE-grown SQWs were smoother than those of MOVPE-grown SQWs.

    DOI: 10.1002/pssc.201300670

  217. Enhancement of light output power on GaN based light emitting diodes using two direction stripe patterned sapphire substrate Reviewed

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi C   Vol. 11   page: 722-725   2014.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    To achieve both the reduction of threading dislocation density (TDD) and the enhancement of light extraction efficiency (LEE) of light-emitting diodes (LEDs), a two-directional stripe-patterned sapphire substrate (TPSS) was fabricated. First, a stripe pattern parallel to the a-axis of Al2O3 was formed on an as-received c -sapphire wafer and then a second stripe pattern rotated around 3° from the m-axis of Al2O3 was formed on the first stripe PSS. The light output power of TPSS LEDs was around 1.25 times higher than that of LEDs on a flat sapphire substrate. This enhancement is caused by the increase of both the internal quantum efficiency (IQE) and the LEE. On the other hand, although the LED on TPSS with the second stripe just parallel to the m-axis of Al2O3 showed a similar enhancement ratio of the light output power, the current leakage of this LED increased with the concentration of threading dislocations on the surface of LEDs. Stripes rotated 3° from the m-axis of Al2O3 changed the growth mode and realized GaN films with a smooth surface without pit formation. Therefore, the misalignment of the stripe from the m-axis of Al2O3 will become a new design parameter for realizing high-efficiency reliable LEDs.

    DOI: 10.1002/pssc.201300470

  218. Epitaxial growth of GaN by REMOCVD in the downflow of a very high frequency(VHF) N2/H2 excited plasma Reviewed

    Yi Lu, Hiroki Kondo,Kenji Ishikawa,Osamu Oda,KeigoTakeda,Makoto Sekine, Hiroshi Amano,Masaru Hori

    Journal of Crystal Growth   Vol. 391   page: 97-103   2014.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We found that this REMOCVD allowed the growth of epitaxial GaN films of the wurtzite structure of (0001) orientation on sapphire substrates with a high growth rate of 0.42 μm/h at a low temperature of 800 °C. The present REMOCVD is a promising method for GaN growth at relatively low temperature and without using costly ammonia gas.

    DOI: 10.1016/j.jcrysgro.2014.01.014

  219. Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays Reviewed

    Cao Miao, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 53   page: 0303060   2014.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Regularly distributed nanopyramid arrays with a highly uniform size were grown by selective-area growth. The nanopyramid size could be tuned by varying the growth time. Two emission peaks were observed from multiple quantum wells grown on the nanopyramids. The longer-wavelength peak originated from the apexes of pyramids with threefold symmetry. High-density stacking faults observed at these triangular apexes might be responsible for the higher indium incorporation. The formation of embedded voids inside the pyramids was explained by the different growth rates at the edge and center of the mask window caused by the low diffusion length.

    DOI: 10.7567/JJAP.53.030306

  220. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy Reviewed

    Guangxu Ju, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    Journal of Applied Physics   Vol. 115   page: 094906   2014.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The effects of GaN quantum barriers with changing growth temperatures on the interfacial
    characteristics of GaN/InGaN single quantum well (SQW) grown on GaN templates by metalorganic
    vapour phase epitaxy were in situ investigated by X-ray crystal truncation rod (CTR) scattering and
    X-ray reflectivity measurements at growth temperature using a laboratory level X-ray diffractometer.
    Comparing the curve-fitting results of X-ray CTR scattering spectra obtained at growth temperature
    with that at room temperature, the InxGa1-xN with indium composition less than 0.11 was stabile of
    the indium distribution at the interface during the whole growth processes.

    DOI: 10.1063/1.4867640

  221. Multijunction GaInN-based solar cells using a tunnel junction Reviewed

    Hironori Kurokawa, Mitsuru Kaga, Tomomi Goda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Applied Physics Express   Vol. 7 ( 3 ) page: 034104   2014.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We fabricated and characterized a two-junction GaInN-based solar cell using a tunnel junction fabricated by crystal growth. This solar cell has two active layers with a differing bandgap energy corresponding to blue or green light. We confirmed that the open-circuit voltage (VOC) in this solar cell was increased by the series connection using the tunnel junction. The short-circuit current density, VOC, fill factor, and energy conversion efficiency of this solar cell were 0.28 mA/cm2, 3.0 V, 0.5, and 0.41%, respectively, under an air mass filter of 1.5 G at 1-sun irradiation and room temperature.

    DOI: 10.7567/APEX.7.034104

  222. Novel activation process for Mg-implanted GaN Reviewed

    Shin Hashimoto, Takao Nakamura, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   Vol. 388   page: 112-115   2014.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    A novel activation process for Mg-implanted GaN was demonstrated. As opposed to the conventional thermal annealing process, an H2/NH3 alternating supply annealing process achieved better optical activation, stronger near-ultraviolet luminescence and weaker yellow luminescence in the photoluminescence spectroscopy. After this process, small hexagonal hillocks were observed on the surface, which indicated that crystal regrowth was induced by this process, consisting of decomposition of GaN by H2 supplies and re-crystallization by NH3 supplies. It was revealed that the implanted Mg could easily be located at the activation site by means of crystal regrowth by this process.

    DOI: doi:10.1016/j.jcrysgro.2013.07.011

  223. Properties of the main Mg-related acceptors in GaN from optical and structural studies Reviewed

    B. Monemar, P. P. Paskov, G. Pozina, C. Hemmingsson, J. P. Bergman, S. Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoç, H. Amano, M. Iwaya, and I. Akasaki

    Journal of Applied Physics   Vol. 115   page: 053507   2014.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The luminescent properties of Mg-doped GaN have recently received particular attention, e.g., in the
    light of new theoretical calculations, where the deep 2.9 eV luminescence band was suggested to be
    the main optical signature of the substitutional MgGa acceptor, thus, having a rather large binding
    energy and a strong phonon coupling in optical transitions. We present new experimental data on
    homoepitaxial Mg-doped layers, which together with the previous collection of data give an
    improved experimental picture of the various luminescence features in Mg-doped GaN.

    DOI: 10.1063/1.4862928

  224. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching Reviewed

    Ji-Su Son, Yoshio Honda, and Hiroshi Amano

    Optics Express   Vol. 22 ( 3 ) page: 3585-3592   2014.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Nonpolar a-plane (11-20) GaN (a-GaN) layers with low overall defect density and high crystalline quality were grown on r-plane sapphire substrates using etched a-GaN. The a-GaN layer was etched by pulse NH3 interrupted etching.

    DOI: 10.1364/OE.22.003585

  225. Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Reviewed

    Byung Oh Jung, Si-Young Bae, Yoshihiro Kato, Masataka Imura, Dong-Seon Lee, Yoshio Honda and Hiroshi Amano

    CrystEngComm   Vol. 16   page: 2273-2282   2014.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    we demonstrate a scalable process for the precise position-controlled selective growth of
    GaN nanowire arrays by metalorganic chemical vapor deposition (MOCVD) using a pulsed-mode growth
    technique. The location, orientation, length, and diameter of each GaN nanowire are controlled via
    pulsed-mode growth parameters such as growth temperature and precursor injection and interruption
    durations.

    DOI: 10.1039/c3ce42266f

  226. Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates Reviewed

    Ji-Su Son, Y. Honda, M. Yamaguchi, H. Amano, K. H. Baik, Y. G. Seo and S. M. Hwang

    Thin Solid Films   Vol. 546 ( 11 ) page: 108-113   2013.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We report on the characteristics of a-plane GaN films directly grown on optimized silicon-dioxide-patterned r-plane sapphire substrates. Various shapes and sizes of silicon dioxide patterns were considered with the aim of achieving fully coalescent a-plane GaN films with a smooth surface and high crystalline quality. The omega full widths at half maximum of the X-ray rocking curve values of optimized a-plane GaN films with regular hexagonal patterns of 1 micron window width and 6 micron mask width were measured to be 597 arcsec along the c-axis direction and 457 arcsec along the m-axis direction. Atomic force microscopy images revealed a significant reduction in the density of submicron pits in the mask region.

  227. Effects of exciton localization on internal quantum efficiency of InGaN nanowires Reviewed

    Hideaki Murotani, Yoichi Yamada, Takuya Tabata, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Journal of Applied Physics   Vol. 114   page: 153506   2013.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Internal quantum efficiency of InGaN nanowires grown by PA MBE was investigated in detail.

    DOI: 10.1063/1.4825124

  228. Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy Reviewed

    Tomohiro Doi, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JB14   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    InGaN/AlGaN multi-quantum wells (MQWs) were grown by metalorganic vapor phase epitaxy. The In composition of the InGaN well layer was found to increase with the tensile strain of the AlGaN barrier layer. The InGaN/AlGaN strain-compensated structure can be grown at a higher growth temperature than that of the InGaN/GaN MQW, which shows that the same emission wavelength and thus the density of the V-defects can be effectively suppressed.

    DOI: 10.7567/JJAP.52.08JB14

  229. GaN Overgrowth on Thermally Etched Nanoporous GaN Template Reviewed

    Cao Miao, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JB03   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    A thermal-etching process for fabricating nanoporous GaN templates in a metalorganic vapor phase epitaxy (MOVPE) reactor was proposed. Such nanoporous templates exhibited nearly complete strain relaxation and considerably increased photoluminescence (PL) intensity. The threading dislocation density (TDD) after overgrowth was reduced from 3 ×109 to 4 ×108 cm-2 for the template with poor quality, whereas little improvement was observed for the high-quality template (TDD, 4 ×108 cm-2). Multiple quantum wells (MQWs) grown on a nanoporous template fabricated from the high-quality GaN template were used to assess the effect on LED performance. The PL intensity of the sample with a nanoporous structure showed a twofold increase in PL intensity compared with the control sample.

    DOI: 10.7567/JJAP.52.08JB03

  230. Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer Reviewed

    Takaya Yamada, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 52   page: 08JB16   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    GaN films were successfully grown on Si(111) substrates using a reactive-sputter-deposited AlN intermediate layer (sp-AlN) at 350 °C. Uniform GaN growth was obtained with the pre sputtering of a thin Al film before the deposition of sp-AlN. Atomic force microscopy (AFM) measurements revealed that the density of pits originating from the ends of mixed/screw-type dislocations is about 109 cm-2, which is much lower than that of GaN grown on a metalorganic vapor phase epitaxy (MOVPE) deposited AlN intermediate layer. The decrease in the pit density might have originated from the small number of initial nuclei of GaN.

    DOI: 10.7567/JJAP.52.08JB16

  231. Fabrication of InGaN/GaN Multiple Quantum Wells on (1-101) GaN Reviewed

    Tomoyuki Tanikawa, Tomotaka Sano, Maki Kushimoto, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JC05   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    InGaN/GaN multiple quantum wells (MQWs) on semipolar (1101) GaN microstripes on a Si substrate were fabricated and their optical properties were investigated. From cathodoluminescence (CL) analysis, strong CL emission was obtained in an MQW emitting at 433 nm. However, dark lines appeared in MQWs emitting at longer wavelengths. These dark lines are attributed to lattice relaxation and the generation of misfit dislocations and stacking faults in an MQW, resulting in nonradiative centers. The internal quantum efficiency (IQE) was estimated from excitation-power-dependent photoluminescence analysis. The (1101) InGaN/GaN MQW had a high IQE owing to the high crystalline quality of the underlying GaN and the reduced piezoelectric field. The IQE at a carrier concentration of 1×1018 cm-3 in a sample emitting at 490 nm was as high as 90%. The efficiency decreased in a sample with a higher indium content in the MQW due to the generation of misfit dislocations and stacking faults.

    DOI: 10.7567/JJAP.52.08JC05

  232. Stacking Faults and Luminescence Property of InGaN Nanowires Reviewed

    Takuya Tabata, Jihyun Paek, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JE06   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    InGaN nanowires (NWs) were grown on (111)Si substrate using radio-frequency plasma-assisted molecular beam epitaxy, and the density of the stacking faults (SFs) in the InGaN NWs was estimated. High-density SFs were observed in the scanning transmission electron microscopy (STEM) and transmission electron microscopy (TEM) images of the InGaN NWs, and a few zincblende layers appeared in the wurtzite structure. When growth temperature increased, the density of the SFs in the InGaN NW, the photoluminescence (PL) peak wavelength, and the full width at half maximum (FWHM) of PL spectra decreased, whereas the integrated PL intensity increased. These results suggest that a high growth temperature is effective for decreasing the density of SFs in InGaN NWs, and InGaN NWs grown at high temperature have strong PL luminescence due to the low In composition and the corresponding low SFs density.

    DOI: 10.7567/JJAP.52.08JE06

  233. Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire Reviewed

    Ji-Su Son, Cao Miao, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Yong Gon Seo, Sung-Min Hwang, and Kwang Hyeon Baik

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JC04   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We report on the combined effects of a-plane GaN layers on a nanoscale patterned insulator on an r-plane sapphire substrate and epitaxial lateral overgrowth (ELOG) techniques. The fully coalescent a-plane GaN layer using nano- and microscale SiO2 masks showed the formation of nano- and microscale voids on the masks, respectively. Atomic force microscopy (AFM) measurements revealed a surface roughness of 0.63 nm and a submicron pit density of 7.8 ×107 cm-2. Photoluminescence (PL) intensity was enhanced by a factor of 9.0 in comparison with that of a planar sample. Omega full-width at half-maximum (FWHM) values of the (1120) X-ray rocking curve along the c- and m-axes were 553 and 788 arcsec, respectively. A plan-view cathodoluminescence (CL) mapping image showed high luminescence intensity on the SiO2 masks.

    DOI: 10.7567/JJAP.52.08JC04

  234. High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate Reviewed

    Tomotaka Sano, Tomohiro Doi, Shunko Albano Inada, Tomohiko Sugiyama, Yoshio Honda, Hiroshi Amano, and Takashi Yoshino

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JK09   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We fabricated blue, blue-green, and green light-emitting diodes (LEDs) of different dislocation densities (DD) and characterized their internal quantum efficiency (IQE). The IQE of the blue LEDs fabricated using GaN substrate exceeded 90 percent, however, when we used a GaN-on-sapphire substrate, IQE was limited to 60 percent. Droop was reduced by use of the GaN substrate. The junction temperature of the GaN-on-sapphire substrate was found to be 200 degreeC although the junction temperature of the GaN substrate was 50 degreeC when a forward current of 100 A/cm2 was driven. A lowering of IQE in green LEDs to 60 percent was observed, even though we used a low-dislocation-density substrate.The junction temperature of blue-green and green LEDs was about 100 degreeC when a forward current of 177 A/cm2 was driven, which indicated that junction temperature is not a major factor for IQE suppression in green LEDs.

    DOI: 10.7567/JJAP.52.08JK09

  235. Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern Reviewed

    Koji Okuno, Takahide Oshio, Naoki Shibata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JB09   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    A sapphire substrate with a grooved stripe pattern along different radial directions was prepared to investigate the effects of stripe direction on the growth mode and threading dislocation (TD) behavior of GaN films. When the stripe direction is oriented parallel to [1010]sapphire, the GaN films have a triangular structure that is formed by the GaN{1011} facets. As the stripe direction rotates from [1010]sapphire, nanosteps with a step height of around 80 nm are formed on the GaN{1011} facets and then the coalescence of GaN on the ridges and grooves advances. GaN films with a smooth surface and a TD density as low as 2.0×108 cm-2 were achieved when the stripe direction was rotated 3° from [1010]sapphire. Our result indicates that the surface roughness and TD density of GaN films can be controlled by precisely adjusting the angle of the stripe direction from [1010]sapphire.

    DOI: 10.7567/JJAP.52.08JB09

  236. Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer Reviewed

    Toshiya Ohata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JB11   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    A thick InGaN film was grown on a sapphire substrate by metal organic vapor phase epitaxy using a thin buffer layer of sputter-deposited InGaN. A thick film of highly luminescent In0.2Ga0.8N can be successfully grown at a rate as high as 2 µm/h. The crystal quality of InGaN grown on the sputter-deposited InGaN buffer layer was better than that of InGaN grown directly on the sapphire substrate. The sample showed n-type conduction with a carrier concentration and mobility of 5×1018 cm-3 and 3 cm2/(V·s), respectively.

    DOI: 10.7567/JJAP.52.08JB11

  237. Combination of ITO and SiO2/AlN Dielectric Multilayer Reflective Electrodes for UV-Emitting Diodes Reviewed

    Tsubasa Nakashima, Kenichiro Takeda, Hiroshi Shinzato, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JG07   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We have investigated novel reflective electrodes by combining an ITO layer and a SiO2/AlN dielectric multilayer (DM) for UV-light-emitting diodes (LEDs). The reflectance of 10 pairs of SiO2/AlN DM reached 98.5 percent at 350 nm. As a result, the ITO/DM electrodes simultaneously satisfied the requirements of high reflectivity in the UV region, good contact characteristics, and current spreading. The light output power of the UV LED with an ITO/DM electrode is 1.2 and 1.6 times higher than those of LEDs with ITO/Al and Ni/Au electrodes, respectively.

    DOI: 10.7567/JJAP.52.08JG07

  238. GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy Reviewed

    Shinta Nakagawa, Takuya Tabata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JE07   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Self-assembled GaN and InGaN nanowires (NWs) were directly grown on a highly oriented pyrolytic graphite (HOPG) substrate by radio frequency molecular beam epitaxy (RF-MBE). The GaN NWs grown on HOPG had a shorter length and larger diameter than those grown conventionally on a Si(111) substrate based on the analysis of scanning electron microscopy (SEM) images. They were also found to have good crystalline qualities with few stacking faults, as determined by scanning transmission electron microscopy (STEM) analysis. Photoluminescence (PL) measurements at room temperature indicated that the luminescence intensity of the GaN NWs on HOPG is stronger than that of NWs grown on a Si(111) substrate; however, the InGaN NWs on both substrates showed similar tendencies with respect to the shift of the luminescence wavelength as a function of the growth temperature. While In incorporation decreased as the growth temperature increased, the uniformity of the InGaN NW arrays improved rapidly.

    DOI: 10.7567/JJAP.52.08JE07

  239. Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes Reviewed

    Mikiko Mori, Shinichiro Kondo, Shota Yamamoto, Tatsuro Nakao1, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 )   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We investigated the concentration properties of GaInN-based solar cells using different window electrodes. A significant difference was observed between the concentrating properties of the window electrode structures. It was clearly found that indium tin oxide (ITO) is suitable as an electrode. The short-circuit current density, open-circuit voltage, fill factor, and energy conversion efficiency of nitride-based solar cells fabricated using an ITO electrode were 7.1×102 mA/cm2, 2.2 V, 79%, and 4.0%, respectively, under an air mass filter of 1.5G at 300 suns and at room temperature.

    DOI: 10.7567/JJAP.52.08JH02

  240. Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires Reviewed

    Hideaki Murotani, Hiroya Andoh, Takehiko Tsukamoto, Toko Sugiura, Yoichi Yamada, Takuya Tabata, Yoshio Honda, Masatoshi Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JE10   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The internal quantum efficiency (IQE) of InGaN nanowires with different emission wavelength of 485, 515, 555, and 580 nm has been studied by means of photoluminescence (PL) spectroscopy. It was found from the analysis of IQE as a function of excitation power density that the IQE was unchanged at about 100% under weak excitation conditions at low temperature. This indicated that the effects of nonradiative recombination processes were negligibly small at low temperature. Moreover, the IQE increased from 5 to 12% with increasing emission wavelength from 485 to 580 nm. Since the clear correlation between the IQE and the PL blue shift due to band filling effects of localized states was observed, the increase in the IQE reflected the increase in the effect of exciton localization with increasing indium composition.

    DOI: 10.7567/JJAP.52.08JE10

  241. Luminescence of Acceptors in Mg-Doped GaN Reviewed

    Bo Monemar, Sergey Khromov, Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Hiroshi Amano, Vitaliy Avrutin, Xing Li, and Hadis Morkoç

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JJ03   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    It is concluded that the typical PL peaks at 3.466 eV (ABE1)and the broader 3.27 eV DAP PL are the expected standard PL signatures of the substitutional Mg acceptor. Additional broader peaks at 3.455 eV (ABE2) and 3.1 eV are suggested to be related to the same acceptors perturbed by nearby basal plane stacking faults. The low temperature metastability of PL spectra is assigned to a nonradiative metastable deep level.

    DOI: 10.7567/JJAP.52.08JJ03

  242. Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20 > and <1-100 > Zone-Axes of AlN for Polarity Determination Reviewed

    Masataka Imura, Ujjal Gautam, Kiyomi Nakajima, Yasuo Koide, Hiroshi Amano, and Kenji Tsuda

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JE15   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    To accurately and easily determine the polarity of AlN using transmission electron microscopy, we compare the convergent-beam electron diffraction (CBED) patterns along the widely used <1120 > and <1100 > zone-axes. For the <1120 > zone-axis, the diffraction disk of g= 0002 differs from that of g= 0002, while for <1100 >, the diffraction disks of g= 0002 and 0002 are similar. The preferential clarity of these two disks is explained using Bloch-wave dynamical theory. To further support the explanation, we compare the results of GaN case. On the basis of our analysis, we conclude that the CBED patterns of the <1120 > zone-axis are more useful for accurately determining AlN polarity compared to the CBED patterns along the <1100 > zone-axis.

    DOI: 10.7567/JJAP.52.08JE15

  243. Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities Reviewed

    Kimiyasu Ide, Yuko Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JE22   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Using the epitaxial lateral growth technique, we compared the crystallinity and relaxation ratio of 3-µm- and 200-nm-thick Al0.5Ga0.5N on an AlN template and AlN grown by epitaxial lateral overgrowth (ELO-AlN), both of which were grown on a sapphire substrate. Although the relaxation ratios of 3-µm-thick Al0.5Ga0.5N were almost the same, the misfit dislocation density at the interface and the density of threading dislocations reaching the surface of Al0.5Ga0.5N were significantly different. Also, the increase in the density of newly generated misfit dislocations was found to be highly dependent on the quality of the AlN underlying layer. We also discuss the difference in the initial growth mode of each Al0.5Ga0.5N sample.

    DOI: 10.7567/JJAP.52.08JE22

  244. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN Reviewed

    Hiroshi Amano

    Japanese journal of applied physics   Vol. 52 ( 5 ) page: 050001-1-050001-10   2013.5

     More details

    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    With the continuously increasing demand for the conservation and generation of energy, bulk substrates of group III nitride semiconductors are highly expected to maximize their potential. In this report, I review the current status of the growth methods for bulk GaN single crystals used for substrates as well as summarize the characteristics of blue light-emitting diodes (LEDs), heterojunction field-effect transistors (HFETs), and photovoltaic cells on GaN substrates.

    DOI: 10.7567/JJAP.52.050001

  245. AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN Reviewed

    T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

    Journal of Crystal Growth   Vol. 370 ( 1 ) page: 16-21   2013.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The GaN/AlN multilayer structure was grown on a stripe-patterned and dot-patterned Si substrate, and subsequently annealed at 1200 °C in H2 and NH3 atmosphere. We achieved an AlN/air structure by the decomposition of GaN from the microcracks of AlN. Partially crack-free AlN layers were observed over a 5×5 μm area in the c-plane of AlN/air DBRs.

    DOI: 10.1016/j.jcrysgro.2012.09.062

  246. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Tanaka, Shigeyasu; Amano, Hiroshi

    Physica Status Solidi C   Vol. 10 ( 3 ) page: 369-372   2013.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 0.1002/pssc.201200587

  247. Effects of low energy e-beam irradiation on cathodoluminescence from GaN Reviewed

    Suihkonen, S.; Nykaenen, H.; Tanikawa, T.; Yamaguchi, M.; Honda, Y.; Amano, H.

    Physica Status Solidi A   Vol. 210 ( 2 ) page: 383-385   2013.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201228457

  248. Development of High-Density Nitrogen Radical Source for Low Mosaicity and High Rate Growth of InGaN Films in Molecular Beam Epitaxy Reviewed

    Chen, S ; Kawai, Y ; Kondo, H ; Ishikawa, K ; Takeda, K ; Kano, H ; Sekine, M ; Amano, H Hori, M

    Japanese Journal of Applied Physics   Vol. 52 ( 2 ) page: 021001-021006   2013.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    A high-density radical source (HDRS) was developed by optimizing the antenna structure and introducing an external magnetic field to plasma. Nitrogen radical generation by the HDRS at a density of 2.3 ×1012 atoms cm-3, which was one order higher than that for the conventional radical source (CRS), was achieved. The HDRS- and CRS-assisted InGaN growth in molecular beam epitaxy (MBE) was carried out. For the HDRS case, a diffraction peak in the X-ray rocking curve of the grown InGaN films showed a narrower peak, which width below 600 arcsec even with a high growth rate of 1.4 µm/h for InGaN. MBE with the assistance of HDRS has a great potential in the growth of nitride films with a lower mosaicity and a higher growth rate.

    DOI: 10.7567/JJAP.52.021001

  249. Surface potential effect on excitons in AlGaN/GaN quantum well structures Reviewed

    Pozina, G.; Hemmingsson, C.; Amano, H.; Monemar, B.

    Applied Physics Letters   Vol. 102 ( 8 ) page: 082110/1-082110/4   2013.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4793568

  250. Individual roles of atoms and ions during hydrogen plasma passivation of surface defects on GaN created by plasma etching Reviewed

    Chen, Shang; Ishikawa, Kenji; Lu, Yi; Kometani, Ryosuke; Kondo, Hiroki; Tokuda, Yutaka; Egawa, Takashi; Amano, Hiiroshi; Sekine, Amano; Hori, Masaru

    Japanese Journal of Applied Physics   Vol. 51 ( 11 ) page: 111002/1-11102/5   2012.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    In the recovery of photoluminescence intensities for band-edge emissions at around 3.47 eV in the case of gallium nitride (GaN), we have studied the individual roles of hydrogen atoms (H) and hydrogen ions (H-n(+)). Surface defects such as nitrogen vacancies created by plasma etching were passivated by H termination. By utilizing hydrogen plasmas, we clarified the recovery efficiency by optical and stoichiometrical improvements with respect to the balance between the fluxes of H and H-n(+). By deflecting H-n(+) by applying an electric field, the efficiency was improved using an identical H dosage, since the simultaneous irradiation of the energetic H-n(+) promoted the desorption of the formed passivated Ga-H bonds.

    DOI: 10.1143/JJAP.51.111002

  251. Correlation between device performance and defects in GaInN-based solar cells Reviewed

    Mori, Mikiko; Kondo, Shinichiro; Yamamoto, Shota; Nakao, Tatsuro; Fujii, Takahiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   Vol. 5 ( 8 ) page: 082301/1-082301/3   2012.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We investigated the correlation between the device performance and defects, such as V-shaped pits and threading dislocations, in GaInN-based solar cells. To realize high-performance GaInN-based solar cells with a high open-circuit voltage and fill factor, it is essential to realize a low pit density of less than 10(7) cm(-2). In this study, we were unable to observe clear evidence of any effect of the threading dislocation density in the GaN underlying layer.

    DOI: 10.1143/APEX.5.082301

  252. MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate Reviewed

    Yasuhiro Isobe, Hiromichi Ikki, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki,Takayuki Sugiyama, Hiroshi Amano, Mamoru Imade, Yusuke Mori

    Journal of Crystal Growth   Vol. 351 ( 1 ) page: 126-130   2012.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We investigated unintentionally doped nonpolar a- and m-plane GaN layers grown by metalorganic vapor phase epitaxy under several sets of conditions on freestanding a- and m-plane GaN substrates. Oxygen contamination in a-plane GaN is greatly reduced by increasing the V/III ratio during growth. As a result, a high-resistivity GaN buffer layer for an AlGaN/GaN heterostructure field-effect transistor was realized.

  253. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

    Mitsunari, Tadashi; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physca Status Solidi c   Vol. 9 ( 3-4 ) page: 480-483   2012.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We proposed an in-situ void formation technique using high-temp. AlN growth on GaN stripes in order to reduce residual stress. Microcracks were obsd. during the growth of AlN; the GaN stripes then sublimated from the microcracks while keeping the AlN shell, resulting in void formation in the AlN shell structure. After GaN regrowth on this AlN shell structure, we successfully coalesced the GaN stripes to form a smooth, thick GaN layer having voids at the GaN/substrate interface. Raman spectroscopy confirmed that the residual tensile stress was decreased. The thermal stress decreased owing to the sepn. between the GaN layer and a foreign substrate.

    DOI: 10.1002/pssc.201100502

  254. Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate Reviewed

    T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, Y. Mori

    Physica Status Solidi c   Vol. 9 ( 3-4 ) page: 875-878   2012.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We measured drain bias stress effects and current collapse in AlGaN/ GaN heterostructure field-effect transistors (HFETs) on a-plane and c-plane GaN substrates. An a-plane AlGaN/GaN HFET (a-HFET) shows small current collapse with a threshold voltage (Vth = -1.8 V). On the other hand, a c-plane HFET (c-HFET) with the same barrier thickness (20 nm) shows a small current collapse, although Vth was neg. large (Vth = -4 V). Current collapse in a-HFET was not large compared with that in conventional c-HFET on GaN. A c-HFET on sapphire was also measured. The current collapses in HFETs on sapphire were larger than that in HFETs on a GaN substrate. The current collapses in the thin-barrier c-HFET (Vth = -1.8 V) were particularly large. Therefore, an a-plane device is promising for a small or pos. Vth with small current collapse.

    DOI: 10.1002/pssc.201100397

  255. Laser lift-off of AlN/sapphire for UV light-emitting diodes Reviewed

    Aoshima, Hiroki; Takeda, Kenichiro; Takehara, Kosuke; Ito, Shun; Mori, Mikiko; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Physica Status Solidi C   Vol. 9 ( 3-4 ) page: 753-756   2012.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We report on laser lift-off (LLO) of AlN/sapphire for UV light-emitting diodes (LEDs). Underfill between chip and submount is a key factor for the successful LLO of AlN/sapphire. We fabricated thin-film-flip-chip UV LEDs with a peak wavelength of 343 nm using the LLO. Moreover surface texturing was carried out on the exfoliated AlN surface. The light output power from the UV LED after the LLO and the surface texture at exfoliated surface is 1.7 times higher than that before the LLO at 20 mA.

    DOI: 10.1002/pssc.201100491

  256. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

    Tabata, Takuya; Paek, Jihyun; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi c   Vol. 9 ( 3-4 ) page: 646-649   2012.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We have grown InGaN nanowires (NWs) on a (111)Si substrate directly by radio-frequency plasma-assisted mol. beam epitaxy (RF-MBE), and investigated their In compositional distribution by energy dispersive x-ray spectroscopy (EDX). The In compn. line profiles of InGaN NWs measured by EDX are different at each position in the InGaN NWs, and In is most easily incorporated into the top of NWs. The In compn. at the top of the NWs depends on the growth temp. and the In flux ratio. However, the In compns. at other positions is not dependent on these factors. Thus, these results might be due to the limited diffusion of In atoms from the top of the NWs towards the NWs/Si interface.

    DOI: 10.1002/pssc.201100446

  257. Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors Reviewed

    Kazuya Ikeda, Yasuhiro Isobe, Hiromichi Ikki, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

    Physica Status Solidi c   Vol. 9 ( 3-4 ) page: 942-944   2012.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We report on the electrical properties of AlInN/GaInN
    heterostructures fabricated with InN molar fractions of 0 to 0.6 in the GaInN layer. High-density two-dimensional electron gases are formed near the interfaces of AlInN/AlN/GaInN at InN molar fractions of 0.3 and 0.6.
    The Al0.82In0.18N/AlN/Ga0.4In0.6N/GaN heterostructure
    field-effect transistors exhibited static characteristics.
    The maximum drain-source current reached a value of
    0.26 A/mm.

    DOI: 10.1002/pssc.201100492

  258. High carrier concentration in high Al-composition AlGaN-channel HEMTs Reviewed

    Hashimoto, Shin; Akita, Katsushi; Yamamoto, Yoshiyuki; Ueno, Masaki; Nakamura, Takao; Yafune, Norimasa; Sakuno, Keiichi; Tokuda, Hirokuni; Kuzuhara, Masaaki; Takeda, Kenichiro; Iwaya, Motoaki; Amano, Hiroshi

      Vol. 9 ( 2 ) page: 373-376   2012.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    High Al-compn. (Al = 51%) and low Al-compn. (Al = 20%) AlGaN-channel high-electron-mobility transistors (HEMTs) on AlN layers with very high carrier concn. were demonstrated. In two types of HEMTs, 2-dimensional electron gases (2DEG) were clearly obsd. and peak carrier concn. and sheet carrier concn. were approx. 1020 cm-3 and higher than 2 × 1013 cm-2, resp. From the X-ray diffraction (XRD) measurements, it was obsd. that the AlGaN channel layers on the AlN layers were partially relaxed and the degree of relaxation decreased with increasing Al-compn. of AlGaN channel layers. Therefore the misfit dislocations in the high Al-compn. HEMTs were considered to be lower than those in the low Al-compn. HEMTs. Furthermore, it was revealed that very high Al-compn. of AlGaN barrier layers can be grown coherently on the AlGaN channel layers in consequence of the partly relaxation of the AlGaN channel layers, which of lattice consts. of a-axis were smaller than that of fully relaxed AlGaN channel layers. Therefore very high carrier concn. of 2DEG can be obtained in spite of the high Al-compn. of AlGaN channel layers. We considered that this high carrier concn. of 2DEG was necessary to demonstrate high Al-compn. AlGaN-channel HEMTs.

    DOI: 10.1002/pssc.201100289

  259. Progress and prospect of the growth of wide-band-gap group III nitrides: development of the growth method for single-crystal bulk GaN Reviewed

      Vol. 81 ( 6 ) page: 455-463   2012.6

     More details

    Authorship:Lead author   Language:Japanese   Publishing type:Research paper (scientific journal)  

  260. Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates Reviewed

    Kouta Yagi, Mitsuru Kaga, Kouji Yamashita, Kenichirou Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   Vol. 51   page: 051001   2012.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We have demonstrated crack-free 30-pair-AlN/GaN distributed Bragg reflectors (DBRs) grown on AlN templates for the first time. A reasonably high reflectivity of 97.5% was obtained. X-ray diffraction measurements revealed that the AlN templates cause compressive stress in DBRs. At the same time, the AlN/GaN DBRs were found to relax to average AlGaN alloys with AlN mole fractions determined by the thickness ratio of the AlN layer to one pair of AlN and GaN in DBRs regardless of the underlying template, AlN or GaN.

    DOI: 10.1143/JJAP.51.051001

  261. Growth of GaN and AlGaN on (100) beta-Ga2O3 substrates Reviewed

    Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

      Vol. 9 ( 3-4 ) page: 519-522   2012.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The crystalline quality of GaN and Al0.08Ga0.92N epitaxial layers on (100) β-Ga2O3 substrates was significantly improved by the facet-controlled growth method. The facets were controlled by changing the nitrogen ambient thermal annealing temperature. We demonstrated the highcrystalline-quality GaN and Al0.08Ga0.92N on β-Ga2O3 substrates, which were comparable to GaN and AlGaN on sapphire substrates using low-temperature buffer layers.
    This method is useful for the fabrication of verticaltype ultraviolet (UV) light-emitting diodes (LEDs) on β-Ga2O3 substrates.

    DOI: 10.1002/pssc.201100499

  262. Properties of nitride-based photovoltaic cells under concentrated light illumination Reviewed

    Shota Yamamoto, Mikiko Mori, Yosuke Kuwahara, Takahiro Fujii, Tatsuo Nakao, Shinichiro Kondo, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

    Physica Status Solidi Rapid Research Letter   Vol. 6 ( 4 ) page: 145-147   2012.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We investigated the properties of nitride-based solar cells under concentrated light illumination from 1 to 200 suns. The conversion efficiency of our solar cells increased with increasing concentration up to 200 suns. The short-circuit cur- rent density, open-circuit voltage, fill factor, and conversion efficiency were 510 mA/cm2, 1.9 V, 70%, and 3.4%, respectively, under an air mass filter of 1.5G at 200 suns and room temperature. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

    DOI: DOI: 10.1002/pssr.201206038

  263. Development of AlN/diamond heterojunction field effect transistors Reviewed

    Masataka Imura, Ryoma Hayakawa, Hirotaka Ohsato, Eiichiro Watanabe, Daiju Tsuya, Takahiro Nagata, Meiyong Liao, Yasuo Koide, Jun-ichi Yamamoto, Kazuhito Ban, Motoaki Iwaya, Hiroshi Amano

    Diamond and Related Materials   Vol. 24   page: 206-209   2012.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    AlN/diamond heterojunction field effect transistors with p-channel and normally-on depletion mode are developed, and the device performance is improved by reducing the contact resistances at source and drain contacts reported previously. The heterojunction structure is constructed from a c-axis-oriented AlN epilayer grown on oxygen-terminated (111) diamond substrate by metal-organic vapor phase epitaxy at temperatures as high as 1250 °C. Thermal treatment in the mixed hydrogen (H2) and ammonia atmosphere just before AlN growth improves the AlN adhesion to diamond surface. In addition, this treatment simultaneously produces a much larger surface hole-carrier density than that obtained by conventional H2-plasma treatment. X-ray photoelectron spectroscopy reveals the existence of carbon-nitrogen bonds at the diamond surface, and these may be responsible for such a large hole density. These results are promising in relation to new opportunities for developing diamond-based power electronic devices.

  264. Indium-Tin Oxide/Al eflective Electrodes for Ultraviolet Light-Emitting Diodes Reviewed

    Kosuke Takehara, Kenichiro Takeda, Shun Ito, Hiroki Aoshima, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 51   page: 042101   2012.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.51.042101

  265. Indium-Tin oxide/Al reflective electrodes for ultraviolet light-emitting diodes Reviewed

    Takehara, Kosuke; Takeda, Kenichiro; Ito, Shun; Aoshima, Hiroki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

      Vol. 51 ( 4 ) page: 042101/1-042101/4   2012.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We investigated indium-tin oxide (ITO)/Al reflective electrodes for improving the light extraction efficiency of UV light-emitting diodes (LEDs). The ITO layer showed high transparency in the UV region upon optimization of the thickness and annealing temperature. As a result, the ITO/Al electrode exhibited both high reflectivity in the UV region and good contact characteristics simultaneously. Using this electrode, we succeeded in improving the light output power of a 350 nm UV-A LED.

    DOI: 10.1143/JJAP.51.042101

  266. Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate Reviewed

    Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Nobuhiko Sawaki

    Physica Status Solidi b   Vol. 249   page: 468-471   2012.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: DOI: 10.1002/pssb.201100445

  267. Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers Reviewed

    Hashimoto Shin; Akita Katsushi; Yamamoto Yoshiyuki, HIroshi Amano

    Physica Status Solidi a   Vol. 209   page: 501-504   2012.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: DOI: 10.1002/pssa.201100379

  268. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

    Tetsuhiko Inazu, Shinya Fukahori, Cyril Pernot, Myung Hee Kim, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Masahito Yamaguchi, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   Vol. 50   page: 122101   2011.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with aluminum reflective electrodes deposited to cover both p- and n-mesh contact electrodes have been fabricated. A 1.55-fold increase in light extraction efficiency has been demonstrated. Despite their reduced contact area, the LEDs exhibited only a slight increase in forward voltage of 0.45 V at 20 mA. Also, their 50% lifetime was estimated to be about 10,000 h at 20 mA DC at room temperature by extrapolation. Owing to the reflective electrodes, a 288 nm LED with external quantum efficiency as high as 5.4% was achieved. The light output power was 4.6 mW at 20 mA.

    DOI: 10.1143/JJAP.50.122101

  269. Dependence of Resonance Energy Transfer on Exciton Dimensionality Reviewed

    Jan Junis Rindermann, Galia Pozina, Bo Monemar, Lars Hultman, Hiroshi Amano, and Pavlos G. Lagoudakis

    Physical Review Letters   Vol. 107   page: 236805   2011.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We investigate the dependence of resonance energy transfer from Wannier-Mott excitons to an organic overlayer on exciton dimensionality. We exploit the excitonic potential disorder in a single quantum well to tune the balance between localized and free excitons by scaling the Boltzmann distribution of excitons through temperature. Theoretical calculations predict the experimentally observed temperature dependence of resonance energy transfer and allow us to quantify the contribution of localized and free excitons. We show that free excitons can undergo resonance energy transfer with an order of magnitude higher rate compared to localized excitons, emphasizing the potential of hybrid optoelectronic devices utilizing resonance energy transfer as a means to overcome charge transfer related limitations.

  270. Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate Reviewed

    Tatsuro Nakao, Takahiro Fujii, Toru Sugiyama, Shota Yamamoto, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Applied Physics Express   Vol. 4   page: 101001   2011.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We fabricated and characterized a nonpolar a-plane nitride-based solar cell on an r-plane sapphire substrate. The maximum external quantum efficiency of the solar cell reached 62% at a wavelength of approximately 400 nm. The open-circuit voltage, the short-circuit current density, and the fill factor of the solar cell were 0.9 V, 4.8 mA/cm2, and 57%, respectively. A conversion efficiency of 1.6% was obtained from the solar cell under a solar simulator of air mass 1.5 G and an irradiation intensity of 155 mW/cm2 at room temperature. ©2011 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.4.101001

  271. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    Myunghee Kim, Takehiko Fujita, Shinya Fukahori, Tetsuhiko Inazu, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Masahito Yamaguchi, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Applie Physics Express   Vol. 4   page: 092102   2011.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/APEX.4.092102

  272. AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage Reviewed

    Yoshinori Oshimura, Takayuki Sugiyama, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 50   page: 084102   2011.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    lGaN/GaN heterostructure field-effect transistors (HFETs) were fabricated by metalorganic vapor phase epitaxy (MOPVE) on c-plane Fe-doped GaN (GaN:Fe) substrates with different growth conditions of GaN buffer layers. The GaN buffer layers were grown at a V/III ratio of 272 at 300 Torr to realize highly resistive GaN buffer layers with automatic carbon doping. HFETs with carbon-doped GaN buffer layers showed the best characteristics among all the samples in this study. The carbon concentration was 5×1016 cm-3. In the sample with a gate-drain length of 50 µm, the off-state breakdown voltage was 2 kV or higher and the on-resistance was 18.5 mΩ·cm2. We found that the carbon-doped GaN buffer layers are necessary for high breakdown voltages even using semi-insulating GaN:Fe substrates.

  273. Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN Reviewed

    S. Khromov, C. G. Hemmingsson, H. Amano, B. Monemar, L. Hultman, and G. Pozina

    Pysical Review   Vol. B84   page: 075324   2011.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.84.075324

  274. Reduction in threshold current density of 355 nm UV laser diodes Reviewed

    Nagata, Kengo; Takeda, Kenichiro; Nonaka, Kentaro; Ichikawa, Tomoki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Yoshida, Harumasa; et al

    Physica Status Solidi C   Vol. 8 ( 5 ) page: 1564-1568   2011.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We have investigated the characteristics of 355 nm UV laser diodes. Two laser diode structures were prepd. on a grooved AlGaN template as well as on a flat AlGaN template. The threading dislocation densities on the grooved and flat AlGaN were 2.5 × 108 cm-2 and 6.5 × 109 cm-2, resp. The threshold c.d. of the laser diode on the grooved AlGaN was 6 kA/cm2, while no lasing was obsd. from the laser diode on the flat AlGaN. We also estd. the internal quantum efficiency as well as the injection efficiency in the UV laser diode structures by considering internal quantum efficiency of both optical and elec. excitation. At a carrier d. of 1.2 × 1019 cm-3, the internal quantum efficiency of the laser diode structure on the grooved AlGaN was about 50%. This is twice that of the laser diode on the flat AlGaN. At the same time, the internal quantum efficiency estd. from the optical excitation also reached about 50%, even at a carrier d. of 3 × 1018 cm-3. This implies that the injection efficiency in our UV laser diode structure was only 25%. Improving the injection efficiency should be effective for significantly reducing the threshold c.d.

  275. Transparent electrode for UV light-emitting-diodes Reviewed

    Takehara, Kosuke; Takeda, Kenichiro; Nagata, Kengo; Sakurai, Hisashi; Ito, Shun; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2375-2377   2011.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We have investigated the transparent electrodes using indium tin oxide (ITO) for UV light-emitting diodes (LEDs). The carrier concn. of ITO was increased from 1.1 × 1018 to 1.5 × 1021 cm-3 after annealing under N2 ambient at 600 °C. The fundamental absorption edge was also shifted to a shorter wavelength owing to the increase in carrier concn., through the so-called the Burstein-Moss effect. The annealed ITO forms an ohmic contact with p-GaN with a specific contact resistance of 1.2 × 10-3 Ωcm2. The light output power of a 350 nm LED with the annealed ITO contact is 1.2 times higher than that with a conventional Ni/Au contact.

  276. Achieving high-growth-rate in GaN homoepitaxy using high-density nitrogen radical source Reviewed

    Kawai, Yohjiro; Chen, Shang; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Kondo, Hiroki; Hirmatsu, Mineo; Kano, Hiroyuki; Yamakawa, Koji; Den, Shoji; et al

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2089-2091   2011.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The key issue in GaN growth by radio-frequency plasma-assisted mol. beam epitaxy is the low growth rate compared with that obtained using an ammonia source. To reduce the processing time and to improve the cryst. quality of the epilayer, a high-d. radical source (HDRS) with high stability has been developed. The growth rate of the GaN epilayer was improved using the HDRS rather than a conventional radical source. During the growth, a sharp streak pattern obtained by RHEED was maintained. An atomically smooth surface was confirmed by at. force microscopy observation.

  277. AlGaN/GaInN/GaN heterostructure field-effect transistor Reviewed

    Ikki, Hiromichi; Isobe, Yasuhiro; Iida, Daisuke; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Bandoh, Akira; Udagawa, Takashi

    Physica Status Solidi A   Vol. 208 ( 7 ) page: 1614-1616   2011.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We report on the elec. properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier d. of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 × 1013 cm-2 at an InN molar fraction of 0.60. The Al0.30Ga0.70N/Ga0.40In0.60N heterostructure exhibited static field-effect transistor (FET) characteristics.

  278. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes Reviewed

    Pernot, Cyril; Fukahori, Shinya; Inazu, Tetsuhiko; Fujita, Takehiko; Kim, Myunghee; Nagasawa, Yosuke; Hirano, Akira; Ippommatsu, Masamichi; Iwaya, Motoaki; Kamiyama, Satoshi, Amano Hiroshi; et al

    Physica Status Solidi A:   Vol. 208 ( 7 ) page: 1594-1596   2011.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We report on the fabrication and characterization of high efficiency UV light emitting diodes (LEDs) with emission wavelength ranging from 255 to 355 nm. Epi-layers of UV LEDs were grown on AlGaN templates with sapphire substrates. Flip-chip configuration without removing sapphire is used for characterization of the UV LEDs. External quantum efficiencies (EQEs) over 3% were obtained for all the investigated wavelengths with max. value reaching 5.1% for 280 nm LED. Under RT DC operation at a current of 500 mA, output powers of 38, 77, and 64 mW were measured for 257, 280, and 354 nm, resp. By using enhanced light extn. technologies, such as, moth-eye structure on the back side of the sapphire substrate, we expect to improve these values by up to 50%.

  279. Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed

    Sugiyama, Takayuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Oshimura, Yoshinori; Iida, Daisuke; Iwaya, Motoaki; Akasaki, Isamu

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2424-2426   2011.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We measured the drain bias stress effects in normally off mode AlGaN/GaN (JHFETs) with a p-GaN gate, whose AlGaN barrier was exposed to air by dry etching. A large current collapse and a memory effect decreased the drain current (IDS). IDS of an unpassivated sample became the off leakage level of normally off mode JHFETs at a drain stress bias of 15 V. On the other hand, IDS in SiN-passivated JHFETs decreased at a slow rate upon applying drain stress bias. The decrease in IDS in SiN-passivated JHFETs was almost the same as that in asgrown HFETs. These drain stress and memory effects were perfectly deletable by light exposure, and were rewritable similarly in an EPROM.

  280. GaInN-based solar cells using GaInN/GaInN superlattices Reviewed

    Fujii, Takahiro; Kuwahara, Yousuke; Iida, Daisuke; Fujiyama, Yasuhara; Morita, Yoshiki; Sugiyama, Toru; Isobe, Yasuhiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; et al

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2463-2465   2011.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We report on the fabrication of GaInN-based solar cells using GaInN/GaInN superlattices as active layers and also as underlying layers beneath the active layers. We obtained pit-free surfaces, even with a high InN molar fraction, using the superlattices. As a result, the max. external and internal quantum efficiencies reached 60%, and 88%, resp. The open-circuit voltage of the soalr cells was 1.77 V, the short-circuit c.d. was 3.08 mA/cm2, and the fill factor was 70.3%. A conversion efficiency of 2.46% was achieved at room temp. under simulared 1.5 sun × AM1.5G illumination using a solar simulator.

  281. Injection efficiency in AlGaN-based UV laser diodes Reviewed

    Nagata, Kengo; Takeda, Kenichiro; Oshimura, Yoshinori; Takehara, Kosuke; Aoshima, Hiroki; Ito, Shun; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; et al

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2384-2386   2011.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We evaluated AlGaN-based 355 nm UV laser diodes prepd. under two different Mg activation conditions. The annealing processes for Mg activation in p-layers were carried out under N2 or O2 ambient to investigate the effect of the ambient gas on the laser characteristics. The threshold current densities and operating voltages of the UV laser diodes were improved by annealing under O2 compared with those under N2. We then estd. the injection efficiencies of the laser diode structures by considering the internal quantum efficiencies of optical excitation and elec. excitation. The internal quantum efficiency of the elec. excited spontaneous emission from the laser structure annealed under O2 reached 50% at a carrier d. of 7.0 × 1018 cm-3, while the structure annealed under N2 required a 1.8-fold higher carrier d. of 1.2 × 1019 cm-3 to reach the same internal quantum efficiency. In addn., the internal quantum efficiency estd. from optical excitation reached 50% even at a carrier d. of 3.0 × 1018 cm-3. This implies that the injection efficiencies in the UV laser diode structures annealed under N2 and O2 were 25% and 45%, resp. Mg activation by O2 annealing is effective for increasing the injection efficiency.

  282. Low leakage current in AlGaN/GaN HFETs with preflow of Mg source before growth of u-GaN buffer layer Reviewed

    Oshimura, Yoshinori; Sugiyama, Takayuki; Takeda, Kenichiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Physica Status Solidi A   Vol. 208 ( 7 ) page: 1607-1610   2011.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    AlGaN/GaN heterostructure field-effect transistors were grown by metalorg. vapor phase epitaxy on Fe-doped GaN substrates with a preflow of the Mg source. We realized a low drain leakage current, 1.05 μA/mm, at VDS = 20 V and VGS = -5 V with LGD = 3 μm. This leakage current was one order of magnitude lower than that obtained without a preflow of the Mg source. The breakdown voltage was over 250 V with LGD = 10 μm. The on resistance was estd. to be 3.6 mΩ cm2. No significant redistribution or memory effect of Mg was obsd. by secondary ion mass spectroscopy measurement.

  283. Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate Reviewed

    Murase, Tasuku; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2160-2162   2011.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    A smooth laser structure on (1-101) GaN microstripes was successfully fabricated on a patterned (100) 8°-off Si substrate. The sample has a high internal quantum efficiency (IQE) compared with blue LEDs on a sapphire substrate. The high-d. excitation PL spectrum obsd. from the cross section of the sample shows marked narrowing, and the integral PL intensity also shows a steep increase. These results indicate the onset of stimulated emission from an InGaN-based multi quantum well (MQW) active layer on (1-101) GaN (100) Si. To the best of our knowledge, this is the first report of the observation of a stimulated emission from a (1-101) MQW on a Si substrate. We succeeded in fabricating and verifying the high-quality laser structure on semipolar (1-101) GaN on a Si substrate.

  284. Optimization of initial MOVPE growth of non-polar m- and a-plane GAN on Na flux grown LPE-GaN substrates Reviewed

    Isobe, Yasuhiro; Iida, Daisuke; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Imade, Mamoru; Kitaoka, Yasuo; et al

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2095-2097   2011.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We optimized the initial GaN growths of nonpolar m- and a-plane GaN grown on liq. phase epitaxy (LPE-) GaN substrates. Such nonpolar LPE-GaN substrates were produced by cutting slices from c-plane LPE-GaN bulk single crystals grown by the Na-flux method. We investigated the qualities of epitaxially grown GaN layers on the LPE-GaN substrates, with different polishing methods, which are chem. mech. polishing and plasma dry etch polishing. We found that the cryst. quality of epitaxial GaN on m-plane GaN is very sensitive to the surface polishing even the minute unevenness in GaN substrate. Our expts. also indicated that a low initial growth rate was necessary to obtain high-cryst.-quality epitaxial m-plane GaN. In contrast, high-cryst.-quality a-plane GaN was obtained even with a high initial growth rate, indicating that the cryst. quality of a-plane GaN is not sensitive to surface roughness.

  285. Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes Reviewed

    Tanikawa, Tomoyuki; Murase, Tasuku; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2038-2040   2011.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We demonstrated the effects of growth conditions such as growth pressure and growth temp. during the selective growth of InGaN/GaN multiple quantum wells (MQWs) on semipolar GaN microstripes on Si substrates. Grown layers exhibited the ridge growth, which indicates the thickness fluctuation, owing to the source supply from the apexes of the GaN microstructure. Ridge growth was suppressed by increasing growth pressure and decreasing growth temp. Cathode luminescence (CL) anal. showed uniform luminescence. As a result, high pressure and low temp. are suitable for obtaining uniform heterostructures in the selective growth of InGaN/GaN MQWs on GaN microstripes.

  286. Nonpolar a-plane AlGaN/GaN heterostructure field-effect transistors grown on freestanding GaN substrate Reviewed

    Isobe, Yasuhiro; Ikki, Hiromichi; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Sugiyama, Takayuki; Amano, Hiroshi; Imade, Mamoru; et al

    Applied Physics Express   Vol. 4 ( 6 ) page: 064102/1-064102/3   2011.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We fabricated and characterized nonpolar a-plane AlGaN/GaN heterostructure field-effect transistors (HFETs) grown on an a-plane freestanding GaN substrate. By optimizing the growth conditions, the unintentionally doped oxygen concn. was much reduced in the a-plane GaN buffer layer. As a result, the low leakage current in the buffer layer was realized without doping of deep acceptors, such as Fe and C, by which an impurity-contamination-free channel layer can be successfully grown.

  287. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1-101) semipolar GaN Reviewed

    Wu, Z. H.; Tanikawa, T.; Murase, T.; Fang, Y.-Y.; Chen, C. Q.; Honda, Y.; Yamaguchi, M.; Amano, H.; Sawaki, N.

    Applied Physics Letters   Vol. 98 ( 5 ) page: 051902/1-051902/3   2011.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The authors have studied the structural properties and relaxation phenomenon of InGaN multiple quantum wells (QWs) on (1.hivin.101) semipolar GaN templates grown on patterned (001) Si substrates by selective area growth technique. Studies by TEM and x-ray diffraction reciprocal space mapping reveal that QWs emitting light at 540 nm experience significant strain relaxation along the in-plane [1.hivin.10.hivin.2] direction by the generation of an array of basal stacking faults (BSF). The generation of BSFs in 540 nm QWs could be an important factor limiting its luminescence efficiency.

  288. Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes Reviewed

    Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi A   Vol. 208 ( 5 ) page: 1175-1178   2011.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We investigated the InGaN/GaN multiple quantum well (MQW) thickness and cathode luminescence (CL) distribution on nonpolar (11-20)GaN, semipolar (11-22)GaN, and (1-101)GaN microstripes grown by selective metal-org. vapor phase epitaxy (MOVPE) on patterned Si substrates. All samples exhibited ridge growth. To clarify the effect of vapor phase diffusion, the two-dimensional diffusion equation was solved. The results were in good agreement with the thickness distribution on the (11-20)GaN stripe when we assumed D/k0 to be 1 μm. However, the results were not in agreement for the semipolar case. On the semipolar face, the surface migration length might be greater, thus increasing the thickness nonuniformity. CL anal. indicated a uniform indium compn. on the (11-20) and (11-22) faces. On the (1-101)GaN stripe, the indium compn. decreased near the (0001) edge. Excess Ga is considered to affect the compositional nonuniformity on the (1-101) facet.

  289. Evidence for moving of threading dislocations during the VPE growth in GaN thin layers Reviewed

    Kuwano, Noriyuki; Miyake, Hideto; Hiramatsu, Kazumasa; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C   Vol. 8 ( 5 ) page: 1487-1490.   2011.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Cross-sectional transmission electron microscope (TEM) observation was performed in detail to analyze the morphol. of threading dislocations (TDs) in GaN thin layers with various thicknesses. The GaN layers were overgrown on an Al0.28Ga0.72N layer by the metal-org. vapor-phase epitaxy (MOVPE) method. In a GaN layer about 50 nm in thickness, TDs running up in the AlGaN layer pass into the GaN layer and most of them reach the top surface without bending. In thicker GaN layers, on the other hand, many of TDs form a hairpin-configuration on or above the interface of GaN and AlGaN to be annihilated. This difference in morphol. of TDs indicates that the TDs have moved down inside the GaN layer. Since the formation of hairpins is attributed to a stress-relief, there should be an extra half-plane between the paired TDs. Therefore, the movement of TDs should be of "climb motion". Another example of possible TD movement inside a GaN layer is also described. It is emphasized that the possibility of TD-movements inside the thin film crystal during the growth should be taken into account in anal. of thin-layer growth through the behavior of TDs.

  290. Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method Reviewed

    Isobe, Yasuhiro; Iida, Daisuke; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Imade, Mamoru; Kitaoka, Yasuo; et al

    Physica Status Solidi A   Vol. 208 ( 5 ) page: 1191-1194   2011.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal m-plane free-standing GaN substrates prepd. by the Na flux method. The miscut angle in the LPE-GaN substrate has a great influence on the surface morphol. and cryst. quality of epitaxial GaN and AlGaN films. In particular, AlGaN/GaN on a 4° miscut-angle LPE-GaN substrate shows large step bunching, small-miscut-angle LPE GaN substrate is essential for fabricating on FET structure with a flat surface.

  291. Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells Reviewed

    Ban, Kazuhito; Yamamoto, Jun-ichi; Takeda, Kenichiro; Ide, Kimiyasu; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   Vol. 4 ( 5 ) page: 052101/1-052101/3   2011.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We analyze the internal quantum efficiency (IQE) of whole-compn.-range AlGaN multiquantum wells (MQWs) on AlGaN with various dislocation densities (DDs) by excitation-d.-dependent photoluminescence measurement. IQEs of deep UV/UV (DUV/UV) MQWs are strongly dependent on the DD. IQE with an excess carrier d. of 1 × 1018 cm-3 changes from 4 to 64% when the DD changes from 6 × 109 to 2 × 108 cm-2. This trend is almost the same for DUV/UV MQWs with emission wavelength ranging from 230 to 350 nm. Thus, the redn. of the DD is very important for the realization of a high-IQE DUV/UV active layer.

  292. Microstructural analysis of thick AlGaN epilayers using Mg-doped AlN underlying layer Reviewed

    Nonaka, K.; Asai, T.; Ban, K.; Yamamoto, J.; Iwaya, M.; Takeuchi, T.; Kamiyama, S.; Akasaki, I.; Amano, H.; Wu, Z. H.

    Physica Status Solidi C   Vol. 8 ( 5 ) page: 1467-1470   2011.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    This paper reports the microstructural anal. of 20-μm-thick Al0.5Ga0.5N with improved cryst. quality owing to the use of a Mg-doped AlN underlying layer. The threading dislocation d. in 20-μm-thick Al0.5Ga0.5N on Mg-doped AlN was 8.6 × 108 cm-2, which is about one-fifth lower than that of Al0.5Ga0.5N on an undoped AlN underlying layer. The microstructural anal. was carried out to clarify dislocation behaviors in the Al0.5Ga0.5N layer on the Mg-doped AlN underlying layer.

  293. Freestanding highly crystalline single crystal AlN substrates grown by a novel closed sublimation method Reviewed

    Yamakawa, Masayasu; Murata, Kazuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Azuma, Masanobu

    Applied Physics Express   Vol. 4 ( 4 ) page: 045503/1-045503/3   2011.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We fabricated thick freestanding AlN films by a novel close-spaced sublimation method. The spacing between a sintered AlN polycrystal and a SiC substrate is 1 mm. A Ta ring was used to control the spacing between the AlN polycrystal and the SiC substrate. In addn., a special AlN adhesive was also used to fill in the gap between the AlN polycrystal, the Ta ring, and the SiC substrate. By a combination of these techniques, an AlN growth rate as high as 600 μm/h was achieved. A freestanding AlN layer was obtained by the sublimation of the SiC substrate during the AlN growth.

  294. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

    Wu, Z. H.; Kawai, Y.; Fang, Y.-Y.; Chen, C. Q.; Kondo, H.; Hori, M.; Honda, Y.; Yamaguchi, M.; Amano, H.

    Applied Physics Letters   Vol. 98 ( 14 ) page: 141905/1-141905/3   2011.3

     More details

    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    Structural properties of thick InGaN layers grown on GaN by plasma-assisted mol. beam epitaxy using two growth rates of 1.0 and 3.6 Å/s have been investigated. A highly regular superlattice (SL) structure formed spontaneously in the film grown at 3.6 Å/s but not in the film grown at 1.0 Å/s. The faster grown film also exhibited superior structural quality, which could be due to the surface roughness suppression caused by kinetic limitation, and the inhibition of the Frank-Read dislocation generation mechanism within the spontaneously formed SL structure.

  295. Demonstration of diamond field effect transistors by AlN/diamond heterostructure Reviewed

    Imura, Masataka; Hayakawa, Ryoma; Watanabe, Ei-Ichiro; Liao, Mei-Yong; Koide, Yasuo; Amano, Hiroshi

    Physica Status Solidi RRL:   Vol. 5 ( 3 ) page: 125-127.   2011.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    This is the first report on an AlN/diamond heterojunction field effect transistor (HFET). The AlN epilayer is grown on oxygen-terminated (111) diamond substrates using metalorg. vapor phase epitaxy at a temp. as high as 1240 °C. The transistor and gate capacitance-voltage characteristics indicate that the HFET behaves as a p-channel FET with a normally-on depletion mode. The HFET channel is located at the AlN/diamond interface, and holes are accumulated in diamond close to the interface. The development of the AlN/diamond HFET creates a new possibility for diamond-based power electronics.

  296. Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency Reviewed

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Amano, H.; Pearton, S. J.; Lee, I.-H.; Sun, Q.; Han, J.; Karpov, S. Yu.

    Applied Physics Letters   Vol. 98 ( 7 ) page: 072104/1-072104/3   2011.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The correlation of integrated microcathodoluminescence efficiency with cryst. quality and deep trap d. of nonpolar GaN films grown by metal org. CVD on semi-insulating 6H-m-SiC or r-sapphire is analyzed. The results suggest a strong influence of nonradiative recombination centers whose concn. decreases with decreased d. of extended defects. Electron traps with energy levels at Ec-0.6 eV and which pin the Fermi level in films with high defect d. are the most likely candidates for the decrease in light emission efficiency in nonpolar GaN.

  297. GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate Reviewed

    Kuwahara, Yousuke; Fujii, Takahiro; Sugiyama, Toru; Iida, Daisuke; Isobe, Yasuhiro; Fujiyama, Yasuharu; Morita, Yoshiki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi, Amano Hiroshi; et al

    Applied Physics Express   Vol. 4 ( 2 ) page: 021001/1-021001/3   2011.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    High-performance GaInN-based solar cells with high open-circuit voltage, high short-circuit c.d., and good fill factor have been obtained using a combination of two different GaInN superlattice structures. The GaInN barrier thicknesses (3 and 0.6 nm) in both superlattice structures were optimized, resulting in a thick GaInN-based active layer with a low pit d. in the device. The conversion efficiency is 2.5% under a solar simulator of air-mass 1.5G and an irradn. intensity of 155 mW/cm2.

  298. Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer Reviewed

    Takeda, Kenichiro; Nagata, Kengo; Ichikawa, Tomoki; Nonaka, Kentaro; Ogiso, Yuji; Oshimura, Yoshinori; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; et al

    Physica Status Solidi C   Vol. 8 ( 2 ) page: 464-466   2011.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We fabricated and evaluated GaN/AlGaN multi-quantum wells (MQWs) and UV laser diodes (UV LDs) on high and low dislocation d. underlying layers by epitaxial lateral overgrowth (ELO) method. We analyzed the internal quantum efficiency (IQE) vs. carrier concn. characteristics quant. by excitation intensity dependent photoluminescence method. The IQE of the MQWs on the ELO AlGaN is 75% when the carrier d. is 1 × 1019 cm-3. We demonstrated the UV LD on the ELO AlGaN. However, the UV LD on flat AlGaN did not operate. Also, we investigated the internal loss (α1) and the IQE multiplied the injection efficiency by changing the reflectivity of the facets. The results showed that the internal loss is 6 cm-1, and the IQE multiplied by the injection efficiency is 18%

  299. Microstructures of GaInN/GaInN superlattices on GaN substrates Reviewed

    Sugiyama, Toru; Kuwahara, Yosuke; Isobe, Yasuhiro; Fujii, Takahiro; Nonaka, Kentaro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   Vol. 4 ( 1 ) page: 015701/1-015701/3.   2011.1

     More details

    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    We found different behaviors of misfit dislocations in a Ga0.83In0.17N single layer and in Ga0.83In0.17N/Ga0.93In0.07N superlattices, both on GaN substrates. In the case of the single layer, misfit dislocations were formed at the GaInN/GaN interfaces and extended through the GaInN layer to the surface. In contrast, the misfit dislocations in the superlattices are bent laterally at interfaces between the Ga0.83In0.17N and Ga0.93In0.07N layers. In addn., most of the dislocations do not reach the surface owing to the formation of dislocation loops. As a result, the dislocation d. at the surface of the GaInN superlattice sample was 5 × 107 cm-2.

  300. Drastic reduction of dislocation density in semipolar (11-.22) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy Reviewed

    Murase, Tasuku; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Sawaki, Nobuhiko

    Japanese Journal of Applied Physics   Vol. 50 ( 1 ) page: 01AD04/1-01AD04/3.   2011.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    A drastic redn. of the dislocation d. in a semipolar (11.hivin.22) GaN stripe on a patterned Si substrate was achieved by the 2-step selective growth of a GaN stripe. After depositing a SiO2 mask on the (11.hivin.22) and (000.hivin.1) faces of a GaN stripe grown on a (113) Si substrate, GaN was regrown only on the (.hivin.1.hivin.122) face. The dislocation d. estd. from the dark-spot d. in a cathodoluminescence (CL) image greatly decreased from 4.0 × 108 to 1.0 × 105/cm2 in the regrowth region. A TEM image also verified that there were no dislocations at the regrowth interfaces.

  301. High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed

    Sugiyama, Takayuki; Amano, Hiroshi; Iida, Daisuke; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu

    Japanese Journal of Applied Physics   Vol. 50 ( 1 ) page: 01AD03/1-01AD03/3   2011.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We demonstrated the high-temp. operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 °C. The temperture dependence of their performance was compared with the results of simulation.

  302. MBE-VLS growth of catalyst-free III-V axial heterostructure nanowires on (1 1 1)Si substrates Reviewed

    Paek, Jihyun; Yamaguchi, Masahito; Amano, Hiroshi

    Journal of Crystal Growth   Vol. 323 ( 1 ) page: 315-318   2011.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    For application in novel opto-electronic nanowire devices, Ga-assisted GaAs/InxGa1-xAs axial heterostructure nanowires grown on a (1 1 1)Si substrate at a high In/Ga flux ratio were investigated. The increased diam. of the InxGa1-xAs region of the nanowire was obsd. from a SEM image. The In compn. of 0.01-0.02 of the InxGa1-xAs was shown by EDX point anal. The In concn. of 0.62 of an In-Ga alloy droplet was estd. from the diam. ratio of the InxGa1-xAs/GaAs region. From these results, it was considered that the excess In was collected in the droplet, resulting in an increased nanowire diam. The increased diam. of the InxGa1-xAs region was also discussed together with the results of thermodn. calcn.

  303. Realization of nitride-based solar cell on freestanding GaN substrate Reviewed

    Kuwahara, Yosuke; Fujii, Takahiro; Fujiyama, Yasuharu; Sugiyama, Tohru; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   Vol. 3 ( 11 ) page: 111001/1-111001/3   2010.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    A p-i-n solar cell composed of an undoped GaInN layer sandwiched between n- and p-type GaN layers was grown on a freestanding c-plane GaN substrate and a c-plane sapphire substrate covered with a low-temp.-deposited buffer layer. The open-circuit voltage is 2.23 V, the fill factor is 61%, the short-circuit c.d. is 1.59 mA/cm2, and the conversion efficiency of the solar cell on the GaN substrate is 1.41% using a solar simulator (1.5 suns). Compared with the solar cell characteristics of the device grown on the sapphire substrate, pit d. markedly decreases. As a result, shunt resistance increases, suppressing the open-circuit voltage drop.

  304. Strain relaxation mechanisms in AlGaN epitaxy on AlN templates Reviewed

    Wu, Zhihao; Nonaka, Kentaro; Kawal, Yohjiro; Asai, Toshiaki; Ponce, Fernando A.; Chen, Changqing; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Applied Physics Express   Vol. 3 ( 11 ) page: 111003/1-111003/3   2010.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Two strain relaxation processes have been obsd. in AGaN layers grown on thick AlN templates. In Process I, a type threading dislocations (TDs) with b = 1/3.ltbbrac.11.hivin.20.rtbbrac. from the AlN underlayer are inclined away from the [0001] axis toward the .ltbbrac.1.hivin.100.rtbbrac. directions when they enter the AlGaN film, forming dislocation line projection perpendicular to the Burger vector. In Process II, a + c-type TDs from the AlN underlayer with Burgers vector of b = 1/3.ltbbrac.11.hivin.23.rtbbrac. glide on {0.hivin.111} planes when they enter the AlGaN film to generate interfacial misfit dislocations lying along the .ltbbrac..hivin.2110.rtbbrac. directions at the AlGaN/AlN interface.

  305. Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy Reviewed

    Imura, Masataka; Ohnishi, Tsuyoshi; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Amano, Hiroshi; Lippmaa, Mikk

    Physica Status Solidi C   Vol. 7 ( 10 ) page: 2365-2367   2010.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    High-cryst. quality AlN layers with an atomically flat surface are grown on (0001) sapphire and 6H-SiC substrates by metal-org. vapor phase epitaxy at 1400 °C without low-temp. buffer layer. The polar direction of AlN layers is investigated by coaxial impact-collision ion scattering spectroscopy (CAICISS). For AlN growth on sapphire substrate, trimethylaluminum (TMAI) is supplied for 10 s before introducing ammonia (NH3). For AlN growth on SiC substrate, TMAl and NH3 are supplied at the same time. The CAICISS spectrum of AlN layers is analyzed by measuring the dependence of the Al atoms signal intensity on the angle of ion beam incidence considering the shadowing and focusing effects for detg. the polar direction of AlN layers. The CAICISS spectra clearly indicate the polar direction of AlN layers and both AlN layers are found to be had the Al-polarity.

  306. Atomic layer epitaxy of AlGaN Reviewed

    Nagamatsu, Kentaro; Iida, Daisuke; Takeda, Kenichiro; Nagata, Kensuke; Asai, Toshiaki; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C:   Vol. 7 ( 10 ) page: 2368-2370   2010.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Atomic layer epitaxy of AlGaN with an av. growth rate of as high as 4.5 mm/h has been achieved by the high-speed switching-valves (HSSVs) technique in a raised-pressure metalorg. vapor phase epitaxy system. Regarding the duration of group III metalorgs. and NH3 gases input, 0.1 s for each injection time is found to be sufficient to realize AlGaN growth of one monolayer per cycle over a 2-in. wafer with hydrogen and nitrogen carrier gases at a raised pressure. Low-temp. growth of high-quality AlGaN has been achieved using HSSVs.

  307. GaInN/GaN p-i-n light-emitting solar cells Reviewed

    Fujiyama, Y.; Kuwahara, Y.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Physica Status Solidi C   Vol. 7 ( 10 ) page: 2382-2385.   2010.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    GaInN/GaN p-i-n double-heterojunction structures were grown by metal-org. vapor phase epitaxy on c-plane sapphire substrates, and light-emitting solar cells with different GaInN active layer thicknesses were fabricated. The thickness of the GaInN active layer was varied from 100 to 400 nm, while the thickness of both n-type and p-type GaN layers was kept const. A semitransparent ohmic contact to p-type GaN was formed by electron-beam evapn. of Ni/Au (5 nm/5 nm). The film thickness of p-GaN was 50 nm. The external quantum efficiency (EQE) of the device with a 400 nm GaInN layer exceeded 60% at a wavelength of approx. 380 nm. The transparency of the Ni/Au electrode was 68%. Therefore, the internal quantum efficiency of this device exceeded 95%. Note that this device emitted green light when a forward voltage was applied. The electroluminescence peak wavelength was approx. 525 nm, which was much longer than the EQE peak wavelength. The origin of this large emission shift is discussed.

  308. Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed

    Sugiyama, Takayuki; Iida, Daisuke; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C:   Vol. 7 ( 10 ) page: 2419-2422   2010.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We demonstrated high-temp. operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temp. Distinct normally off-mode operation with a max. drain current of 93.2 mA/mm at 300 °C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temp. switching devices.

  309. Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate Reviewed

    Sugiyama, T.; Iida, D.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 1980-1982   2010.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The threshold voltage (Vth) of normally off-mode AlGaN/GaN junction heterostructure field-effect transistors with a p-type GaN gate can be successfully controlled by inserting a SiNx insulator between the p-GaN and a Ni/Au electrode. The Vth can be controlled from +1 V to above +8 V. Moreover, the gate leakage current of transistors decreases and their gate voltage at which gate current steeply increases becomes higher. The mechanism of the threshold voltage change is analyzed by the equiv. circuit model.

  310. Growth and characterization of GaN grown on moth-eye patterned sapphire substrates Reviewed

    Ishihara, Akihiro; Kawai, Ryousuke; Kitano, Thukasa; Suzuki, Atushi; Kondo, Toshiyuki; Iwaya, Motoaki; Amano, Hiroshi; Kamiyama, Satoshi; Akasaki, Isamu

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 2056-2058   2010.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    To realize high-efficiency light-emitting diodes (LEDs), it is necessary to increase light extn. efficiency. Therefore, the introduction of a moth-eye structure, which consists of periodic cones with a pitch of optical wavelength magnitude, into a sapphire surface before the epitaxial growth of nitride films is very promising for reducing the reflectivity of light resulting in high light extn. efficiency. 450 nm GaInN/GaN LEDs were fabricated on conventional and moth-eye substrates by metal org. vapor phase epitaxy (MOVPE). The intensity of room-temp. photoluminescence emitted from the LED with the moth-eye-patterned sapphire substrate was 1.6 times higher than that emitted from the LED without the moth-eye substrate. Under a current injection of 50 mA, the output power of the moth-eye LED is 3.6 times higher than that of the conventional LED.
    ~0 Citings

  311. Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy Reviewed

    Iida, Daisuke; Nagata, Kensuke; Makino, Takafumi; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Bandoh, Akira; Udagawa, Takashi

    Applied Physics Express   Vol. 3 ( 7 ) page: 075601/1-075601/2   2010.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  312. Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer Reviewed

    Asai, T.; Nonaka, K.; Ban, K.; Nagata, K.; Nagamatsu, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 2101-2103   2010.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We report on a new technol. for growing low-dislocation-d. AlGaN in which a Mg-doped AlN underlying layer is used. By growing AlxGa1-xN on AlN:Mg with AlN molar fractions x of 0.3, 0.5 and 0.7, the d. of misfit dislocations is much reduced compared with that in the case of growing AlGaN on undoped AlN. In addn., the surface becomes atomically flat.

  313. Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layers Reviewed

    Takeda, Kenichiro; Mori, Fumiaki; Ogiso, Yuji; Ichikawa, Tomoaki; Nonaka, Kentaro; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 1916-1918   2010.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Internal quantum efficiency (IQE) of GaN/AlGaN multi quantum wells on the low dislocation d. Al0.25Ga0.75N grown by epitaxial lateral overgrowth (ELO) and facet controlled epitaxial lateral overgrowth were investigated by excitation intensity dependent photoluminescence measurement. The threading dislocation d. decreased from 4 × 109cm-2 to 2 × 108 cm-2 by using ELO method, then the IQE was much improved from 5% to 40% when the carrier d. was 1 × 1018 cm-3.

  314. Mg-related acceptors in GaN Reviewed

    Monemar, B.; Paskov, P. P.; Pozina, G.; Hemmingsson, C.; Bergman, J. P.; Amano, H.; Akasaki, I.; Figge, S.; Hommel, D.; et al.

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 1850-1852   2010.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Photoluminescence spectra of c-plane Mg doped GaN samples grown by MOVPE on bulk GaN templates reveal previously unknown properties, like the presence of several Mg-related acceptors. The use of unstrained samples allows a study of both bound exciton (BE) and donor-acceptor pair (DAP) spectra. Two main acceptors A1 and A2 are obsd. strongly in BE spectra as well as in DAP spectra, they have similar binding energies, i.e. about 220 meV. The common assignment of the deeper blue PL emission at 2.8-3.0 eV to a deep donor-shallow acceptor transition is questioned, and discussed in connection with the compensation problem in p-GaN. It seems like the Fermi level in p-GaN is controlled by a set of Mg-related acceptors at energies 0.2-0.6 eV from the valence band top.

  315. Nitride-based light-emitting solar cell Reviewed

    Kuwahara, Y.; Fujiyama Y; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 1807-1809   2010.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We report on the characteristics of a group-III-nitride-based solar cell. A GaInN/GaN double heterojunction p-i-n solar cell composed of a GaInN active layer sandwiched between n-type and p-type GaN layers was grown by metal-org. vapor phase epitaxy through an undoped GaN layer on (0001) sapphire substrate. The InN molar fraction of the GaInN active layer was detd. to be 11% from a secondary ion mass spectrometry profile. The max. external quantum efficiency reached 65%, and the internal quantum efficiency was 95% or more. This device emitted light after forward current injection. The PL peak almost corresponded to the absorption edge. However, the electroluminescence (EL) peak was at the wavelength much longer than the absorption edge. The open-circuit voltage is 1.51 V, the fill factor is 52%, and the short-circuit c.d. is 1.6 mA/cm2.

  316. Study of two-dimensional electron gas in AlGaN channel HEMTs with high crystalline quality Reviewed

    Hashimoto, Shin; Akita, Katsushi; Tanabe, Tatsuya; Nakahata, Hideaki; Takeda, Kenichiro; Amano, Hiroshi

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 1938-1940   2010.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Epitaxial structures of AlGaN channel high electron mobility transistors (HEMTs) were grown on sapphire and AlN substrates. Redn. in the full width at half max. of X-ray rocking curve for (10-12) peak of the AlGaN channel layer owing to the redn. of threading dislocation densities resulted in a sharp decrease in the sheet resistance of 2-dimensional electron gas (2DEG). In the case of AlGaN channel HEMTs, it was found that improvement of the cryst. quality of AlGaN channel layers is essential to the redn. of the sheet resistance of 2DEG. The use of AlN substrates resulted in improved cryst. quality of the AlGaN layer and lower 2DEG resistance, suggesting the high potential of AlN substrates for AlGaN channel HEMTs.

  317. AlGaN/GaN HFETs on Fe-doped GaN substrates Reviewed

    Oshimura, Yoshinori; Takeda, Kenichiro; Sugiyama, Takayuki; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Bandoh, Akira; Udagawa, Takashi

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 1974-1976   2010.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    AlGaN/GaN HFETs with different undoped GaN thicknesses were grown on Fe-doped freestanding GaN substrates by conventional MOVPE. To realize a high drain current, thick undoped GaN is found to be necessary. SIMS measurement shows that Fe is redistributed into the epilayer, by which the scattering center is generated at the channel when the thickness of the undoped GaN is insufficient. We also obsd. a similar Fe profile in the GaN/sapphire template placed on the side of the Fe-doped GaN substrate during growth. Therefore, Fe in the Fe-doped GaN substrate is redistributed not only through a solid but also through vapor.

  318. Improved efficiency of 255-280 nm AlGaN-based light-emitting diodes Reviewed

    Pernot, Cyril; Kim, Myunghee; Fukahori, Shinya; Inazu, Tetsuhiko; Fujita, Takehiko; Nagasawa, Yosuke; Hirano, Akira; Ippommatsu, Masamichi; Iwaya, Motoaki; Kamiyama, Satoshi,Hiroshi Amano et al

    Applied Physics Express   Vol. 3 ( 6 ) page: 061004/1-061004/3   2010.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We report on the fabrication and characterization of AlGaN-based deep UV light-emitting diodes (LEDs) with the emission wavelength ranging from 255-280 nm depending on the Al compn. of the active region. The LEDs were flip-chip bonded and achieved external quantum efficiencies of over 3% for all investigated wavelengths. Under cw operation, an output power of more than 1 mW at 10 mA was demonstrated. A moth-eye structure was fabricated on the back side of the Al2O3 substrate, and on-wafer output power measurement indicated a 1.5-fold improvement of light extn.

  319. Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy Reviewed

    Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Journal of Crystal Growth   Vol. 312 ( 21 ) page: 3131-3135.   2010.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The elec. and optical properties of Mg-doped a- and c-plane GaN films grown by MOVPE were systematically investigated. The photoluminescence spectra of Mg-doped a- and c-plane GaN films exhibit strong emissions related to deep donors when Mg doping concns. are above 1 × 1020 cm-3 and 5 × 1019 cm-3, resp. The elec. properties also indicate the existence of compensating donors because the hole concn. decreases at such high Mg doping concns. In addn., we estd. the ND/NA compensation ratio of a- and c-plane GaN by variable-temp. Hall effect measurement. The obtained results indicate that the compensation effect of the Mg-doped a-plane GaN films is lower than that of the Mg-doped c-plane GaN films.

  320. Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO Reviewed

    Wu, Z. H.; Sun, K. W.; Wei, Q. Y.; Fischer, A. M.; Ponce, F. A.; Kawai, Y.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Applied Physics Letters   Vol. 96 ( 7 ) page: 071909/1-071909/3   2010.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The microstructure of m-plane InGaN epilayers grown on m-plane ZnO has been found to depend significantly on indium content in the range from 0.07 to 0.17, where anisotropic lattice mismatch between InGaN and ZnO results in decreasingly tensile and increasingly compressive stress along the a and c lattice axes. For indium content below 0.10, periodic arrays of misfit dislocations with a Burgers vector of 1/3[11-20] are obsd. parallel to the [0001] direction. For indium content above 0.12, generation of basal-plane stacking faults relieve the compressive stress along the 0001 direction. These characteristic mechanisms of strain relaxation should provide new approaches to engineer thick InGaN layers with reduced lattice misfit strain.

  321. Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy Reviewed

    Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

    Diamond and Related Materials   Vol. 19 ( 0 ) page: 131-133   2010.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    We investigate the microstructures of domain boundaries in an AlN layer grown on a (001) diamond substrate by metal-org. vapor phase epitaxy. The AlN layer has a two-domain structure with crystal orientation along either <112-0> AlN [named by AlNI domain] or <101-0> AlN [named by AlNII domain] parallel to [110] direction of diamond. The AlNI and AlNII domains are not atomically bonded at two-domain boundary from initial to final step of growth, while an edge-type dislocation is generated at single-domain boundary (SDB). In addn., an inversion AlNI domain [named by AlNI*] is randomly-ordered at the initial stage of the coalescence between the AlNI domains. The AlNI* is easily terminated with increasing the thickness of AlNI domain. The inversion domain boundary changes to the edge-type dislocation at the SDB with further growth, which reduces the defect d. in the AlNI domains.

  322. High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient Reviewed

    Nagata, Kengo, Ichikawa, Tomoki, Takeda, Kenichiro, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Physica Status Solidi A:   Vol. 207 ( 0 ) page: 1393-1396   2010

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  323. Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy Reviewed

    Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Journal of Crystal Growth   Vol. 312 ( 21 ) page: 3131-3135   2010

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  324. Defects in highly Mg-doped AlN Reviewed

    Nonaka, Kentaro, Asai, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Physica Status Solidi A   Vol. 207 ( 0 ) page: 1299-1301   2010

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  325. Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy Reviewed

    Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

    Journal of Crystal Growth   Vol. 312 ( 0 ) page: 368-372   2010

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  326. Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy Reviewed

    Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

    Journal of Crystal Growth   Vol. 312 ( 0 ) page: 1325-1328   2010

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  327. P-type doping and defect generation in Group III nitride semiconductors Invited Reviewed

    Amano, Hiroshi; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu

    Nippon Kessho Seicho Gakkaishi   Vol. 36 ( 3 ) page: 200-204   2009.3

     More details

    Authorship:Lead author   Language:Japanese   Publishing type:Research paper (scientific journal)  

  328. Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers Reviewed

    Murotani, Hideaki, Kuronaka, Takahiro, Yamada, Yoichi, Taguchi, Tsunemasa, Okada, Narihito, Amano, Hiroshi

    Journal of Applied Physics   Vol. 105 ( 0 ) page: 083533/1-083533/6   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  329. Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN Reviewed

    Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Applied Physics Express   Vol. 2 ( 0 ) page: 061004/1-061004/3   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  330. Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer Reviewed

    Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   Vol. 311 ( 0 ) page: 2850-2852   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  331. Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17) Reviewed

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Physica Status Solidi B:   Vol. 246 ( 0 ) page: 1188-1190   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  332. Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters Reviewed

    Mori, T., Nagamatsu, K., Nonaka, K., Takeda, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.

    Physica Status Solidi C   Vol. 6 ( 0 ) page: 2621-2625   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  333. Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films Reviewed

    Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Petrova, E. A., Amano, H., Kawashima, T., Scherbatchev, K. D., Bublik, V. T.

    Journal of Applied Physics   Vol. 105 ( 0 ) page: 063708/1-063708/9   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  334. Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth Reviewed

    Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yakimov, E. B., Vergeles, P. S., Amano, H., Kawashima, T.

    Journal of Crystal Growth   Vol. 311 ( 0 ) page: 2923-2925   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  335. Evidence for two Mg related acceptors in GaN Reviewed

    Monemar B, Paskov P P, Pozina G, Hemmingsson C, Bergman J P, Kawashima T, Amano H, Akasaki I, Paskova T, Figge S, et al

    Physical review letters   Vol. 102 ( 0 ) page: 235501/1-235501/4   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  336. Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields Reviewed

    Esmaeili, M., Gholami, M., Haratizadeh, H., Monemar, B., Holtz, P. O., Kamiyama, S., Amano, H., Akasaki, I.

    Opto-Electronics Review   Vol. 17 ( 0 ) page: 293-299   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  337. Growth of thick GaInN on grooved (1011) GaN/(1012) 4H-SiC Reviewed

    Matsubara, Tetsuya, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   Vol. 311 ( 0 ) page: 2926-2928   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  338. High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer Reviewed

    Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, et al

    Physica Status Solidi A   Vol. 206 ( 0 ) page: 1199-1204   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  339. InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy Reviewed

    Kawai, Yohjiro, Ohsuka, Shinya, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   Vol. 311 ( 0 ) page: 2929-2932   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  340. Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN Reviewed

    Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.

    Applied Physics Express   Vol. 2 ( 0 ) page: 041002/1-041002/3   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  341. Novel UV devices on high-quality AlGaN using grooved underlying layer Reviewed

    Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al

    Journal of Crystal Growth   Vol. 311 ( 0 ) page: 2860-2863   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  342. One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy Reviewed

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   Vol. 311 ( 0 ) page: 2887-2890   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  343. Optimization of electrode configuration in large GaInN light-emitting diodes Reviewed

    Ochiai, Wataru, Kawai, Ryosuke, Suzuki, Atsushi, Iwaya, Motoaki, Amano, Hiroshi, Kamiyama, Satoshi, Akasaki, Isamu

    Physica Status Solidic   Vol. 6 ( 0 ) page: 1416-1419   2009

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  344. Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates Reviewed

    Imura Masataka, Sugimura Hiroki, Okada Narihito, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira

    J. Crystal Growth   Vol. 310 ( 0 ) page: 2308-2313   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  345. High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN Reviewed

    Nagamatsu Kentaro, Okada Narihito, Sugimura Hiroki, Tsuzuki Hirotoshi, Mori Fumiaki, Iida Kazuyoshi, Bando Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 310 ( 0 ) page: 2326-2329   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  346. AlN and AlGaN by MOVPE for UV light emitting devices Reviewed

    Amano, Hiroshi, Imura, Masataka, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu

    Materials Science Forum   Vol. 590 ( 0 ) page: 175-210   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  347. Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode Reviewed

    Akasaki, Isamu, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 47 ( 0 ) page: 3781   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  348. Control of p-type conduction in a-plane Ga1-xInxN (0 < x < 0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy Reviewed

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   Vol. 310 ( 0 ) page: 4996-4998   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  349. Control of stress and crystalline quality in GaInN films used for green emitters Reviewed

    Iwaya, Motoaki, Miura, Aya, Senda, Ryota, Nagai, Tetsuya, Kawashima, Takeshi, Iida, Daisuke, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   Vol. 310 ( 0 ) page: 4920-4922   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  350. Dynamical study of the radiative recombination processes in GaN/AlGaN QWs Reviewed

    Sabooni, Mahmood, Esmaeili, Morteza, Haratizadeh, Hamid, Monemar, Bo, Amano, Hiroshi

    Journal of Materials Science: Materials in Electronics   Vol. 19 ( 0 ) page: S316-S318   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  351. Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates Reviewed

    Pozina, G., Hemmingsson, C., Paskov, P. P., Bergman, J. P., Monemar, B., Kawashima, T., Amano, H., Akasaki, I., Usui, A.

    Applied Physics Letters   Vol. 92 ( 0 ) page: 151904/1-151904/3   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  352. High hole concentration in Mg-doped a-plane Ga1-xInxN (0<x<0.30) grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy Reviewed

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Applied Physics Letters   Vol. 93 ( 0 ) page: 182108/1-182108/3   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  353. All MOVPE grown nitride-based LED having sub mm underlying GaN Reviewed

    Tanaka Y., Ando J., Iida D., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 3073-3075   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  354. Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE Reviewed

    Nagamatsu Kentaro, Okada Narihito, Kato Naofumi, Sumii Takafumi, Bandoh Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 3048-3050   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  355. Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth Reviewed

    Senda Ryota, Miura Aya, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 3045-3047   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  356. InGaN growth on ZnO (0001) substrate by metalorganic vapor phase epitaxy Reviewed

    Kawai Y., Ohsuka S., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 3023-3025   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  357. Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates Reviewed

    Miura Aya, Nagai Tetsuya, Senda Ryota, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    J. Crystal Growth   Vol. 310 ( 0 ) page: 3308-3312   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  358. Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth Reviewed

    Kawashima T., Hayakawa T., Hayashi M., Nagai T., Iida D., Miura A., Kasamatsu Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 2145-2147   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  359. Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire Reviewed

    Iida K., Watanabe H., Takeda K., Mori F., Tsuzuki H., Yamashita Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 2142-2144   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  360. High drain current and low on resistance normally-off-mode AlGaN/GaN junction HFETs with a p-type GaN gate contact. Reviewed

    Fujii T., Nakamura S., Mizuno K., Nega R., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 1906-1909   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  361. Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth. Optical evidences for a reduced stacking fault density Reviewed

    Paskov P. P., Monemar B., Iida D., Kawashima T., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 1768-1770   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  362. Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates Reviewed

    Imura M., Sugimura H., Okada N., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bando A.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 1582-1584   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  363. Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy Reviewed

    Iida Daisuke, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 1575-1578   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  364. Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy Reviewed

    Kato Naofumi, Sato S., Sugimura H., Sumii T., Okada N., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 1559-1561   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  365. Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates Reviewed

    Pozina G., Hemmingsson C., Paskov P. P., Bergman J. P., Monemar B., Kawashima T., Amano H., Akasaki I., Usui A.

    Appl. Phys. Lett.   Vol. 92 ( 0 ) page: 151904/1-151904/3   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  366. Photoluminescence from highly excited AlN epitaxial layers. Reviewed

    Yamada Yoichi, Choi Kihyun, Shin Seungho, Murotani Hideaki, Taguchi Tsunemasa, Okada Narihito, Amano Hiroshi

    Appl. Phys. Lett.   Vol. 92 ( 0 ) page: 131912/1-131912/3   2008

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  367. Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen Reviewed

    Kamei K., Shirai Y., Tanaka T., Okada N., Yauchi A., Amano H..

    Physica Status Solidi C:   Vol. 4 ( 0 ) page: 2211-2214   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  368. Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates Reviewed

    Pozina G., Paskov P. P., Bergman J. P., Hemmingsson C., Hultman L., Monemar B., Amano H., Akasaki I., Usui A.

    Appl. Phys. Lett.   Vol. 91 ( 0 ) page: 221901/1-221901/3   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  369. Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates Reviewed

    Pozina G., Monemar B., Paskov P. P., Hemmingsson C., Hultman L., Amano H., Akasaki I., Paskova T., Figge S., Hommel D., Usui A.

    Physica B   Vol. 401-402 ( 0 ) page: 302-306   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  370. Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth Reviewed

    Senda Ryota, Miura Aya, Hayakawa Takemasa, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   Vol. 46 ( 0 ) page: L948-L950   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  371. Dependence of DAP emission properties on impurity concentrations in N-/B-co-doped 6H-SiC. Reviewed

    Murata Satoshi, Nakamura Yoshihiro, Maeda Tomohiko, Shibata Yoko, Ikuta Mina, Sugiura Masaaki, Nitta Shugo, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Yoshimoto Masahiro, Furusho Tomoaki, Kinoshita Hiroyuki.

    Materials Science Forum   Vol. 556-557 ( 0 ) page: 335-338   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  372. Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification Reviewed

    Okada N., Kato N., Sato S., Sumii T., Nagai T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Noro T., Bandoh A.

    J. Crystal Growth   Vol. 298 ( 0 ) page: 349-353   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  373. Microstructure in nonpolar m-plane GaN and AlGaN films Reviewed

    Nagai T., Kawashima T., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    J. Crystal Growth   Vol. 298 ( 0 ) page: 288-292   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  374. Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE Reviewed

    Okada N., Kato N., Sato S., Sumii T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Bandoh A.

    J. Crystal Growth   Vol. 300 ( 0 ) page: 141-144   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  375. Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio Reviewed

    Imura Masataka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    J. Crystal Growth   Vol. 300 ( 0 ) page: 136-140   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  376. Epitaxial lateral overgrowth of AlxGa1-xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices Reviewed

    Iida Kazuyoshi, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira.

    J. Crystal Growth   Vol. 298 ( 0 ) page: 265-267   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  377. Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates Reviewed

    Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    J. Crystal Growth   Vol. 298 ( 0 ) page: 261-264   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  378. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers Reviewed

    Imura Masataka, Nakano Kiyotaka, Narita Gou, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    J. Crystal Growth   Vol. 298 ( 0 ) page: 257-260   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  379. High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE Reviewed

    Kato N., Sato S., Sumii T., Fujimoto N., Okada N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.

    J. Crystal Growth   Vol. 298 ( 0 ) page: 215-218   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  380. Reduction in defect density over whole area of (1-100) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth. Reviewed

    Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi B   Vol. 244 ( 0 ) page: 1848-1852   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  381. Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X-ray diffraction analyses. Reviewed

    Inaba Katsuhiko, Amano Hiroshi.

    Physica Status Solidi B   Vol. 244 ( 0 ) page: 1775-1779   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  382. Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum well Reviewed

    Haratizadeh H., Monemar B., Paskov Plamen P., Holtz Per Olof, Valcheva E., Persson P., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi B   Vol. 244 ( 0 ) page: 1727-1734   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  383. One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters Reviewed

    Iida D., Miura A., Okadome Y., Tsuchiya Y., Kawashima T., Nagai T., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi A   Vol. 204 ( 0 ) page: 2005-2009   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  384. High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate Reviewed

    Iida K., Watanabe H., Takeda K., Nagai T., Sumii T., Nagamatsu K., Kawashima T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bandoh A.

    Physica Status Solidi A   Vol. 204 ( 0 ) page: 2000-2004   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  385. Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces. Reviewed

    Valcheva E., Dimitrov S., Monemar B., Haratizadeh H., Persson P. O. A., Amano H., Akasaki I.

    Acta Physica Polonica, A   Vol. 112 ( 0 ) page: 395-400   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  386. Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques Reviewed

    Chichibu S. F., Uedono A., Onuma T., Haskell B. A., Chakraborty A., Koyama T., Fini P. T., Keller S., Denbaars S. P., Speck J. S., Mishra U. K., Nakamura S., Yamaguchi S., Kamiyama S., Amano H., Akasaki I., Han J., Sota T.

    Philosophical Magazine   Vol. 87 ( 0 ) page: 2019-2039   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  387. Entirely crack-free ultraviolet GaN/AlGaN laser diodes grown on 2-in. Sapphire substrate. Reviewed

    Yoshida Harumasa, Takagi Yasufumi, Kuwabara Masakazu, Amano Hiroshi, Kan Hirofumi.

    Jpn. J. Appl. Phys.   Vol. 46 ( 0 ) page: 5782-5784   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  388. Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy Reviewed

    Balakrishnan Krishnan, Bandoh Akria, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   Vol. 46 ( 0 ) page: L307-L310   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  389. Dislocations in AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy Reviewed

    Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    Jpn. J. Appl. Phys.   Vol. 46 ( 0 ) page: 1458-1462   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  390. Control of threshold voltage of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate contact Reviewed

    Fujii Takahiro, Tsuyukuchi Norio, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   Vol. 46 ( 0 ) page: 115-118   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  391. Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping. Reviewed

    Esmaeili M., Haratizadeh H., Monemar B., Paskov P. P., Holtz P. O., Bergman P., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Nanotechnology   Vol. 18 ( 0 ) page: 025401/1-025401/6   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  392. Fabrication of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact Reviewed

    Fujii T., Tsuyukuchi N., Hirose Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 4 ( 0 ) page: 2708-2711   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  393. Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy Reviewed

    Okada N., Imura M., Nagai T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi C   Vol. 4 ( 0 ) page: 2528-2531   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  394. Mg-doped high-quality AlxGa1-xN (x = 0-1) grown by high-temperature metal-organic vapor phase epitaxy Reviewed

    Imura M., Kato N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi C   Vol. 4 ( 0 ) page: 2502-2505   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  395. Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE Reviewed

    Balakrishnan K., Iida K., Bandoh A., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 4 ( 0 ) page: 2272-2276   2007

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  396. Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates Reviewed

    Balakrishnan K., Fujimoto N., Kitano T., Bandoh A., Imura M., Nakano K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Shimono K., Riemann T., Christen J.

    Physica Status Solidi C   Vol. 3 ( 0 ) page: 1392-1395   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  397. Dominant shallow acceptor enhanced by oxygen doping in GaN Reviewed

    Monemar B, Paskov P P, Tuomisto F, Saarinen K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Kimura S

    Physica B   Vol. 376-377 ( 0 ) page: 440-443   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  398. 6H-SiC homoepitaxial growth and optical property of boron- and nitrogen-doped donor-acceptor pair (DAP) emission on 1° -off substrate by closed-space sublimation method Reviewed

    Kawai Y., Maeda T., Nakamura Y., Sakurai Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Yoshimoto M., Furusho T., Kinoshita H., Shiomi H.

    Materials Science Forum   Vol. 527 ( 0 ) page: 263-266   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  399. Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure Reviewed

    Iwaya M., Kasugai H., Kawashima T., Iida K., Honshio A., Miyake Y., Kamiyama S., Amano H., Akasaki I.

    Thin Solid Films   Vol. 515 ( 0 ) page: 768-770   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  400. X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN Reviewed

    Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Physica Status Solidi B   Vol. 243 ( 0 ) page: 1524-1528   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  401. Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates Reviewed

    Nakano K., Imura M., Narita G., Kitano T., Hirose Y., Fujimoto N., Okada N., Kawashima T., Iida K., Balakrishnan K., Tsuda M., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi A   Vol. 203 ( 0 ) page: 1632-1635   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  402. Microstructure of thick AlN grown on sapphire by high-temperature MOVPE Reviewed

    Imura M., Nakano K., Kitano T., Fujimoto N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi A   Vol. 203 ( 0 ) page: 1626-1631   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  403. Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells Reviewed

    Haratizadeh Hamid, Monemar Bo, Amano Hiroshi

    Physica Status Solidi A   Vol. 203 ( 0 ) page: 149-153   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  404. Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC Reviewed

    Kamiyama S., Maeda T., Nakamura Y., Iwaya M., Amano H., Akasaki I., Kinoshita H., Furusho T., Yoshimoto M., Kimoto T., Suda J., Henry A., Ivanov I. G., Bergman J. P., Monemar B., Onuma T., Chichibu S. F.

    J. Apl. Phys.   Vol. 99 ( 0 ) page: 093108/1-093108/4   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  405. Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy Reviewed

    Imura M., Nakano K., Kitano T., Fujimoto N., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.

    Appl. Phys. Lett.   Vol. 89 ( 0 ) page: 221901/1-221901/2   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  406. Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact Reviewed

    Tsuyukuchi Norio, Nagamatsu Kentaro, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   Vol. 45 ( 0 ) page: L319-L321   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  407. High on/off ratio in enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with P-type GaN gate contact Reviewed

    Fujii Takahiro, Tsuyukuchi Norio, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   Vol. 45 ( 0 ) page: L1048-L1050   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  408. Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode Reviewed

    Akasaki Isamu, Amano Hiroshi.

    Jpn. J. Appl. Phys.   Vol. 45 ( 0 ) page: 9001-9010   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  409. High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio Reviewed

    Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    Jpn. J. Appl. Phys.   Vol. 45 ( 0 ) page: 8639-8643   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  410. Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire Reviewed

    Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   Vol. 45 ( 0 ) page: 2509-2513   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  411. Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy Reviewed

    Okada Narihito, Fujimoto Naoki, Kitano Tsukasa, Narita Gou, Imura Masataka, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Shimono Kenji, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    Jpn. J. Appl. Phys.   Vol. 45 ( 0 ) page: 2502-2504   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  412. Effect of UV irradiation by UV LED on the apoptosis and necrosis of Jurkat cells Reviewed

    Inada Shunko Albano, Amano Hiroshi, Akasaki Isamu, Morita Akinori, Kobayashi Keiko.

    Meijo Daigaku Sogo Kenkyusho Sogo Gakujutsu Kenkyu Ronbunshu   Vol. 5 ( 0 ) page: 73-77   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  413. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors Reviewed

    Chichibu Shigefusa F., Uedono Akira, Onuma Takeyoshi, Haskell Benjamin A., Chakraborty Arpan, Koyama Takahiro, Fini Paul T., Keller Stacia, DenBaars Steven P., Speck James S., Mishra Umesh K., Nakamura Shuji, Yamaguchi Shigeo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Han Jung, Sota Takayuki. O

    Nature Materials   Vol. 5 ( 0 ) page: 810-816   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  414. Growth of high-quality AlN at high growth rate by high-temperature MOVPE Reviewed

    Fujimoto N., Kitano T., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi C   Vol. 3 ( 0 ) page: 1617-1619   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  415. Light extraction process in moth-eye structure Reviewed

    Kasugai H., Nagamatsu K., Miyake Y., Honshio A., Kawashima T., Iida K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kinoshita H., Shiomi H.

    Physica Status Solidi C   Vol. 3 ( 0 ) page: 2165-2168   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  416. Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells Reviewed

    Arnaudov B., Paskov P. P., Haratizadeh H., Holtz P. O., Monemar B., Kamiyama S., Iwaya M., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 3 ( 0 ) page: 1888-1891   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  417. Polarity and microstructure in InN thin layers grown by MOVPE Reviewed

    Kuwano N., Nakahara Y., Amano H..

    Physica Status Solidi C   Vol. 3 ( 0 ) page: 1523-1526   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  418. Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate Reviewed

    Imura M., Honshio A., Miyake Y., Nakano K., Tsuchiya N., Tsuda M., Okadome Y., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica B   Vol. 376-377 ( 0 ) page: 491-495   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  419. A hydrogen-related shallow donor in GaN? Reviewed

    Monemar B., Paskov P. P., Bergman J. P., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica B   Vol. 376-377 ( 0 ) page: 460-463   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  420. Dominant shallow acceptor enhanced by oxygen doping in GaN Reviewed

    Monemar B., Paskov P. P., Tuomisto F., Saarinen K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kimura S.

    Physica B   Vol. 376-377 ( 0 ) page: 440-443   2006

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  421. Photoluminescence of GaN/AlN superlattices grown by MOCVD Reviewed

    PP Paskov JP Bergman V Darakchieva T Paskova B Monemar M IwayaS Kamiyama H Amano and I Akasaki

    Physica Status Solidi C: Current Topics in Solid State Physics   Vol. 2 ( 0 ) page: pp2345-2348   2005

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  422. Optical properties of InN related to surface plasmons Reviewed

    Shubina T V, Leymarie J, Jmerik V N, Toropov A A, Vasson A, Amano H, Schaff W J, Monemar B, Ivanov S V

    Physica Status Solidi A   Vol. 202 ( 0 ) page: 2633-2641   2005

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  423. CBED study of grain misorientations in AlGaN epilayers Reviewed

    Sahonta S-L, Cherns D, Liu R, Ponce F A, Amano H, Akasaki I

    Ultramicroscopy   Vol. 103 ( 0 ) page: 23-32   2005

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  424. Phonon mode behavior in strained wurtzite AlN/GaN superlattices Reviewed

    Darakchieva V, Valcheva E, Paskov P P, Schubert M, Paskova T, Monemar B, Amano H, Akasaki I

    Physical Review B   Vol. 71 ( 0 ) page: 115329/1-115329/9   2005

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  425. High-rate growth of films of dense, aligned double-walled carbon nanotubes using microwave plasma-enhanced chemical vapor deposition Reviewed

    Hiramatsu Mineo, Nagao Hidetoshi, Taniguchi Masaki, Amano Hiroshi, Ando Yoshinori, Hori Masaru

    Jpn. J. Appl. Phys.   Vol. 44 ( 0 ) page: L693-L695   2005

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  426. Control of p-type conduction in a-plane GaN grown on sapphire r-plane substrate Reviewed

    Tsuchiya Yosuke, Okadome Yoshizane, Honshio Akira, Miyake Yasuto, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   Vol. 44 ( 0 ) page: L1516-L1518   2005

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  427. Flat (11-20) GaN thin film on precisely offset-controlled (11-02) sapphire substrate Reviewed

    Imura Masataka, Hoshino Akira, Nakano Kiyotaka, Tsuda Michinobu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   Vol. 44 ( 0 ) page: 7418-7420   2005

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  428. High-efficiency nitride-based light-emitting diodes with moth-eye structure Reviewed

    Kasugai Hideki, Miyake Yasuto, Honshio Akira, Mishima Shunsuke, Kawashima Takeshi, Iida Kazuyoshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Kinoshita Hiroyuki, Shiomi Hiromu

    Jpn. J. Appl. Phys.   Vol. 44 ( 0 ) page: 7414-7417   2005

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  429. Impact of H2-preannealing of the sapphire substrate on the crystallinity of low-temperature-deposited AlN buffer layer Reviewed

    Tsuda Michinobu, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   Vol. 44 ( 0 ) page: 3913-3917   2005

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  430. Vertical growth of carbon nanowalls using rf plasma-enhanced chemical vapor deposition Reviewed

    Shiji K, Hiramatsu M, Enomoto A, Nakamura M, Amano H, Hori M

    Diamond and Related Materials   Vol. 14 ( 0 ) page: 831-834   2005

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  431. UV laser diode with 3509-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology Reviewed

    Kamiyama Satoshi, Iida Kazuyoshi, Kawashima Takeshi, Kasugai Hideki, Mishima Shunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu

    IEEE Journal of Selected Topics in Quantum Electronics   Vol. 11 ( 0 ) page: 1069-1073   2005

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  432. Free-to-bound radiative recombination in highly conducting InN epitaxial layers Reviewed

    Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I

    Superlattices and Microstructures   Vol. 36 ( 0 ) page: 563-571   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  433. High-quality Al012Ga088N film with low dislocation density grown on facet-controlled Al012Ga088N by MOVPE Reviewed

    Kawashima Takeshi, Iida Kazuyoshi, Miyake Yasuto, Honshio Akira, Kasugai Hideki, Imura Masataka, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 272 ( 0 ) page: 377-380   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  434. Laser diode of 3509nm wavelength grown on sapphire substrate by MOVPE Reviewed

    Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 272 ( 0 ) page: 270-273   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  435. Time resolved photoluminescence study of Si modulation doped GaN/Al093N multiple quantum wells Reviewed

    Haratizadeh H, Monemar B, Paskov P P, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 241 ( 0 ) page: 1124-1133   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  436. Defect and stress control of AlGaN for fabrication of high performance UV light emitters Reviewed

    Amano H, Miyazaki A, Iida K, Kawashima T, Iwaya M, Kamiyama S, Akasaki I, Liu R, Bell A, Ponce F A, Sahonta S, Cherns D

    Physica Status Solidi A: Applied Research   Vol. 201 ( 0 ) page: 2679-2685   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  437. Optical investigation of AlGaN/GaN quantum wells and superlattices Reviewed

    Monemar B, Paskov P P, Haradizadeh H, Bergman J P, Valcheva E, Darakchieva V, Arnaudov B, Paskova T, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 201 ( 0 ) page: 2251-2258   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  438. Mie Resonances, Infrared Emission, and the Band Gap of InN Reviewed

    Shubina T V, Ivanov S V, Jmerik V N, Solnyshkov D D, Vekshin V A, Kop'ev P S, Vasson A, Leymarie J, Kavokin A, Amano H, Shimono K, Kasic A, Monemar B

    Physical Review Letters   Vol. 92 ( 0 ) page: 117407/1-117407/4   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  439. The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films Reviewed

    Cherns D, Sahonta S-L, Liu R, Ponce F A, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 85 ( 0 ) page: 4923-4925   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  440. Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth Reviewed

    Bell A, Liu R, Parasuraman U K, Ponce F A, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 85 ( 0 ) page: 3417-3419   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  441. Photoluminescence study of Si-doped GaN/Al007Ga093N multiple quantum wells with different dopant position Reviewed

    Haratizadeh H, Monemar B, Paskov P P, Bergman J P, Sernelius B E, Holtz P O, Iwaya M, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 84 ( 0 ) page: 5071-5073   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  442. Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection Reviewed

    Hiramatsu M, Shiji K, Amano H, Hori M

    Appl. Phys. Lett.   Vol. 84 ( 0 ) page: 4708-4710   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  443. Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels Reviewed

    Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 69 ( 0 ) page: 115216/1-115216/5   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  444. 3509 nm UV laser diode grown on low-dislocation-density AlGaN Reviewed

    Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters & Express Letters   Vol. 43 ( 0 ) page: L499-L500   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  445. Study on the seeded growth of AlN bulk crystals by sublimation Reviewed

    Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Takagi Takashi, Noro Tadashi

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   Vol. 43 ( 0 ) page: 7448-7453   2004

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  446. Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements Reviewed

    Takeda Y, Tabuchi M, Amano H, Akasaki I

    Surface Review and Letters   Vol. 10 ( 0 ) page: 537-541   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  447. Piezoelectric effect in group-III nitride-based heterostructures and quantum wells Reviewed

    Takeuchi T, Wetzel C, Amano H, Akasaki I

    Optoelectronic Properties of Semiconductors and Superlattices   Vol. 16 ( 0 ) page: 399-438   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  448. ZrB2 substrate for nitride semiconductors Reviewed

    Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Hiroyuki

    Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers   Vol. 42 ( 0 ) page: 2260-2264   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  449. Growth-induced defects in AlN/GaN superlattices with different periods Reviewed

    Valcheva E, Paskova T, Radnoczi G Z, Hultman L, Monemar B, Amano H, Akasaki I

    Physica B: Condensed Matter AmsterdamNetherlands   Vol. 340-342 ( 0 ) page: 1129-1132   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  450. Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I

    J. Crystal Growth   Vol. 248 ( 0 ) page: 503-506   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  451. Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN Reviewed

    Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Itoh T, McCreery R L, Murakami Masanori, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 240 ( 0 ) page: 356-359   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  452. Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures Reviewed

    Monemar B, Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 237 ( 0 ) page: 353-364   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  453. Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE Reviewed

    Tsuda Michinobu, Watanabe Kenichi, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Liu Rong, Bell Abigail, Ponce Fernando A

    Applied Surface Science   Vol. 216 ( 0 ) page: 585-589   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  454. Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy Reviewed

    Tomida Yoshihito, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Otani Shigeki, Kinoshita Hiroyuki, Liu Rong, Bell Abigail, Ponce Fernando A

    Applied Surface Science   Vol. 216 ( 0 ) page: 502-507   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  455. Violet and UV light-emitting diodes grown on ZrB2 substrate Reviewed

    Kamiyama S, Takanami S, Tomida Y, Iida K, Kawashima T, Fukui S, Iwaya M, Kinoshita H, Matsuda T, Yasuda T, Otani S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 200 ( 0 ) page: 67-70   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  456. Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN Reviewed

    Iwaya M, Takanami S, Miyazaki A, Kawashima T, Iida K, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 200 ( 0 ) page: 110-113   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  457. Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields Reviewed

    Monemar B, Paskov P P, Haratizadeh H, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 195 ( 0 ) page: 523-527   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  458. Group III nitride-based UV light emitting devices Reviewed

    Amano H, Takanami S, Iwaya M, Kamiyama S, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 195 ( 0 ) page: 491-495   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  459. Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy Reviewed

    Onuma T, Chichibu S F, Uchinuma Y, Sota T, Yamaguchi S, Kamiyama S, Amano H, Akasaki I

    J. Apl. Phys.   Vol. 94 ( 0 ) page: 2449-2453   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  460. Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates Reviewed

    Sumiya M, Ogusu N, Yotsuda Y, Itoh M, Fuke S, Nakamura T, Mochizuki S, Sano T, Kamiyama S, Amano H, Akasaki I

    J. Apl. Phys.   Vol. 93 ( 0 ) page: 1311-1319   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  461. Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire Reviewed

    Bell A, Liu R, Ponce F A, Amano H, Akasaki I, Cherns D

    Appl. Phys. Lett.   Vol. 82 ( 0 ) page: 349-351   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  462. High-power UV-light-emitting diode on sapphire Reviewed

    Iwaya Motoaki, Takanami Shun, Miyazaki Atsushi, Watanabe Yasuhiro, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   Vol. 42 ( 0 ) page: 400-403   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  463. Structural analysis of Si-doped AlGaN/GaN multi-quantum wells Reviewed

    Nakamura Tetsuya, Mochizuki Shingo, Terao Shinji, Sano Tomoaki, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 1129-1132   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  464. Photoluminescence and electroluminescence characterization of InxGa1-xN/InyGa1-yN multiple quantum well light emitting diodes Reviewed

    Bergman J P, Pozina G, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Materials Science Forum   Vol. 389-393 ( 0 ) page: 1493-1496   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  465. MOVPE growth and characterization of Al1-xInxN/GaN multiple layers Reviewed

    Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Watanabe Yasuhiro, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 968-971   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  466. Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN Reviewed

    Iwaya Motoaki, Terao Shinji, Sano Tomoaki, Ukai Tsutomu, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 951-955   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  467. Relaxation of misfit-induced stress in nitride-based heterostructures Reviewed

    Terao Shinji, Iwaya Motoaki, Sano Tomoaki, Nakamura Tetsuya, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 947-950   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  468. Characterization of local structures around In atoms in Ga1-xInxN layers by fluorescence EXAFS measurements Reviewed

    Tabuchi M, Katou D, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 1139-1142   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  469. Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers Reviewed

    Tabuchi M, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 1133-1138   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  470. Electric fields in polarized GaInN/GaN heterostructures Reviewed

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    Optoelectronic Properties of Semiconductors and Superlattices   Vol. 14 ( 0 ) page: 219-258   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  471. Reduction of threading dislocation density in AlxGa1-xN grown on periodically grooved substrates Reviewed

    Mochizuki Shingo, Detchprohm Theeradetch, Sano Shigekazu, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 1065-1069   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  472. Low-dislocation-density GaN and AlxGa1-xN (x? 013) grown on grooved substrates Reviewed

    Sano Shigekazu, Detchprohm Theeradetch, Mochizuki Shingo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 235 ( 0 ) page: 129-134   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  473. Migration of dislocations in strained GaN heteroepitaxial layers Reviewed

    Sahonta S-L, Baines M Q, Cherns D, Amano H, Ponce F A

    Physica Status Solidi B: Basic Research   Vol. 234 ( 0 ) page: 952-955   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  474. Mg incorporation in AlGaN layers grown on grooved sapphire substrates Reviewed

    Cherns D, Baines M Q, Wang Y Q, Liu R, Ponce F A, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 234 ( 0 ) page: 850-854   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  475. Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells Reviewed

    Paskov P P, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 234 ( 0 ) page: 755-758   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  476. Mass transport of AlxGa1-xN Reviewed

    Nitta S, Yukawa Y, Watanabe Y, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 194 ( 0 ) page: 485-488   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  477. High-efficiency UV light-emitting diode Reviewed

    Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 194 ( 0 ) page: 393-398   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  478. Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 192 ( 0 ) page: 453-455   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  479. Annihilation of threading dislocations in GaN/AlGaN Reviewed

    Kuwano N, Tsuruda T, Adachi Y, Terao S, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 192 ( 0 ) page: 366-370   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  480. UV light-emitting diode fabricated on hetero-ELO-grown Al022Ga078N with low dislocation density Reviewed

    Kamiyama S, Iwaya M, Takanami S, Terao S, Miyazaki A, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 192 ( 0 ) page: 296-300   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  481. Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures Reviewed

    Monemar B, Paskov P P, Pozina G, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 192 ( 0 ) page: 21-26   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  482. Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells Reviewed

    Monemar B, Paskov P P, Bergman J P, Pozina G, Paskova T, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 190 ( 0 ) page: 161-166   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  483. Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templates Reviewed

    Pozina G, Bergman J P, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 190 ( 0 ) page: 107-111   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  484. High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi S, Iwamura Y, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I

    Institute of Physics Conference Series   Vol. 170 ( 0 ) page: 813-817   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  485. Growth of high-quality GaN on metallic-ZrB2 by metalorganic vapor phase epitaxy Reviewed

    Yukawa Y, Nakamura T, Kosaki M, Watanabe Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H

    Institute of Physics Conference Series   Vol. 170 ( 0 ) page: 713-718   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  486. Low-dislocation-density AlxGa1-xN single crystals grown on grooved substrates Reviewed

    Sano Shigekazu, Detchprohm Theeradetch, Yano Masahiro, Nakamura Ryo, Mochizuki Shingo, Amano Hiroshi, Akasaki Isamu

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   Vol. 93 ( 0 ) page: 197-201   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  487. In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology Reviewed

    Nitta Shugo, Yukawa Yohei, Watanabe Yasuhiro, Kosaki Masayoshi, Iwaya Motoaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   Vol. 93 ( 0 ) page: 139-142   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  488. Optical characterization of III-nitrides Reviewed

    Monemar B, Paskov P P, Paskova T, Bergman J P, Pozina G, Chen W M, Hai P N, Buyanova I A, Amano H, Akasaki I

    Materials Science & Engineering B: Solid-State Materials for Advanced Technology   Vol. 93 ( 0 ) page: 112-122   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  489. Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN Reviewed

    Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Murakami Masanori, Kamiyama S, Amano H, Akasaki I

    J. Apl. Phys.   Vol. 92 ( 0 ) page: 3657-3661   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  490. Atomic arrangement at the AlN/ZrB2 interface Reviewed

    Liu R, Bell A, Ponce F A, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 81 ( 0 ) page: 3182-3184   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  491. Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi Shigeo, Iwamura Yasuo, Watanabe Yasuhiro, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   Vol. 80 ( 0 ) page: 802-804   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  492. Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates Reviewed

    Riemann T, Christen J, Kaschner A, Laades A, Hoffmann A, Thomsen C, Iwaya M, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 80 ( 0 ) page: 3093-3095   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  493. Effect of n-type modulation doping on the photoluminescence of GaN/Al0 Reviewed

    Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 80 ( 0 ) page: 1373-1375   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  494. Optical absorption in polarized Ga1-xInxN/GaN quantum wells Reviewed

    Wetzel Christian, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   Vol. 41 ( 0 ) page: 2010/11/14   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  495. Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells Reviewed

    Wetzel C, Nelson J, Kamiyama S, Amano H, Akasaki I

    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures   Vol. 20 ( 0 ) page: 216-218   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  496. Critical issues in AlxGa1-xN growth Reviewed

    Amano Hiroshi, Akasaki Isamu

    Optical Materials Amsterdam Netherlands   Vol. 19 ( 0 ) page: 219-222   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  497. Novel aspects of the growth of nitrides by MOVPE Reviewed

    Amano H, Akasaki I

    Journal of Physics: Condensed Matter   Vol. 13 ( 0 ) page: 6935-6944   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  498. Absorption spectroscopy and band structure in polarized GaN/AlxGa1-xN quantum wells Reviewed

    Wetzel C, Kasumi M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 183 ( 0 ) page: 51-60   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  499. Control of strain in GaN by a combination of H2 and N2 carrier gases Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    J. Apl. Phys.   Vol. 89 ( 0 ) page: 7820-7824   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  500. Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant Reviewed

    Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   Vol. 82 ( 0 ) page: 137-139   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  501. Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices Reviewed

    Yamaguchi Shigeo, Kosaki Masayoshi, Watanabe Yasuyukihiro, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   Vol. 79 ( 0 ) page: 3062-3064   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  502. Control of strain in GaN using an In doping-induced hardening effect Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Kashima Takayuki, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Amano Hiroshi, Akasaki Isamu

    Physical Review B: Condensed Matter and Materials Physics   Vol. 64 ( 0 ) page: 035318/1-035318/5   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  503. Photoresponse and defect levels of AlGaN/GaN heterobipolar phototransistor grown on low-temperature AlN interlayer Reviewed

    Mouillet Robert, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 40 ( 0 ) page: L498-L501   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  504. Metalorganic vapor phase epitaxial growth of high-quality (Al,In)N/(Al,Ga)N multiple layers on GaN Reviewed

    Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 40 ( 0 ) page: L420-L422   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  505. Fracture of AlxGa1-xN/GaN heterostructure Compositional and impurity dependence Reviewed

    Terao Shinji, Iwaya Motoaki, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 40 ( 0 ) page: L195-L197   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  506. Heteroepitaxial lateral overgrowth of GaN on periodically grooved substrates: a new approach for growing low-dislocation-density GaN single crystals Reviewed

    Detchprohm Theeradetch, Yano Masahiro, Sano Shigekazu, Nakamura Ryo, Mochiduki Shingo, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 40 ( 0 ) page: L16-L19   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  507. Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride Reviewed

    Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Kiroyuki

    Jpn. J. Appl. Phys. Part : Letters   Vol. 40 ( 0 ) page: L1280-L1282   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  508. Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers Reviewed

    Chow W W, Amano H

    IEEE Journal of Quantum Electronics   Vol. 37 ( 0 ) page: 265-273   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  509. High-efficiency GaN/AlxGa1-xN multi-quantum-well light emitter grown on low-dislocation density AlxGa1-xN Reviewed

    Iwaya M, Terao S, Sano T, Takanami S, Ukai T, Nakamura R, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 188 ( 0 ) page: 117-120   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  510. Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport Reviewed

    Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I

    Materials Science Forum   Vol. 353-356 ( 0 ) page: 791-794   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  511. Compensation mechanism in MOCVD and MBE grown GaN:Mg Reviewed

    Alves H, Bohm M, Hofstaetter A, Amano H, Einfeldt S, Hommel D, Hofmann D M, Meyer B K

    Physica B: Condensed Matter AmsterdamNetherlands   Vol. 308-310 ( 0 ) page: 38-41   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  512. DX-like behavior of oxygen in GaN Reviewed

    Wetzel C, Amano H, Akasaki I, Ager J W, Grzegory I, Meyer B K

    Physica B: Condensed Matter AmsterdamNetherlands   Vol. 302&303 ( 0 ) page: 23-38   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  513. Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport Reviewed

    Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I

    J. Crystal Growth   Vol. 230 ( 0 ) page: 473-476   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  514. Near K-edge absorption spectra of III-V nitrides Reviewed

    Fukui K, Hirai R, Yamamoto A, Hirayama H, Aoyagi Y, Yamaguchi S, Amano H, Akasaki I, Tanaka S

    Physica Status Solidi B: Basic Research   Vol. 228 ( 0 ) page: 461-465   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  515. Optical characterization of InGaN/GaN MQW structures without in phase separation Reviewed

    Monemar B, Paskov P P, Pozina G, Paskova T, Bergman J P, Iwaya M, Nitta S, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 228 ( 0 ) page: 157-160   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  516. Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure Reviewed

    Kamiyama S, Iwaya M, Hayashi N, Takeuchi T, Amano H, Akasaki I, Watanabe S, Kaneko Y, Yamada N

    J. Crystal Growth   Vol. 223 ( 0 ) page: 83-91   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  517. Crystal growth of high-quality AlInN/GaN superlattices and of crack-free AlN on GaN: their possibility of high electron mobility transistor Reviewed

    Yamaguchi S, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 188 ( 0 ) page: 895-898   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  518. Growth mechanism and characterization of low-dislocation-density AlGaN single crystals grown on periodically grooved substrates Reviewed

    Detchprohm T, Sano S, Mochizuki S, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 188 ( 0 ) page: 799-802   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  519. Demonstration of flame detection in room light background by solar-blind AlGaN PIN photodiode Reviewed

    Hirano A, Pernot C, Iwaya M, Detchprohm T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 188 ( 0 ) page: 293-296   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  520. Mass transport of GaN and reduction of threading dislocations Reviewed

    Nitta S, Kashima T, Nakamura R, Iwaya M, Amano H, Akasaki I

    Surface Review and Letters   Vol. 7 ( 0 ) page: 561-564   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  521. Electrical conductivity of low-temperature-deposited Al01Ga09N interlayer Reviewed

    Hayashi Nobuaki, Kamiyama Satoshi, Takeuchi Tetsuya, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu, Watanabe Satoshi, Kaneko Yawara, Yamada Norihide

    Jpn. J. Appl. Phys.   Vol. 39 ( 0 ) page: 6493-6495   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  522. Radiative recombination in (In,Ga)N/GaN multiple quantum wells Reviewed

    Bergman J P, Monemar B, Pozina G, Sernelius B E, Holtz P O, Amano H, Akasaki I

    Materials Science Forum   Vol. 338-342 ( 0 ) page: 1571-1574   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  523. Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method Reviewed

    Tabuchi M, Hirayama K, Takeda Y, Takeuchi T, Amano H, Akasaki I

    Applied Surface Science   Vol. 159-160 ( 0 ) page: 432-440   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  524. Mass transport and the reduction of threading dislocation in GaN Reviewed

    Nitta S, Kariya M, Kashima T, Yamaguchi S, Amano H, Akasaki I

    Applied Surface Science   Vol. 159-160 ( 0 ) page: 421-426   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  525. Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy Reviewed

    Yamaguchi S, Kariya M, Nitta S, Amano H, Akasaki I

    Applied Surface Science   Vol. 159-160 ( 0 ) page: 414-420   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  526. Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer Reviewed

    Iwaya M, Terao S, Hayashi N, Kashima T, Amano H, Akasaki I

    Applied Surface Science   Vol. 159-160 ( 0 ) page: 405-413   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  527. Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas Reviewed

    Yamaguchi S, Kariya M, Nitta S, Kashima T, Kosaki M, Yukawa Y, Amano H, Akasaki I

    J. Crystal Growth   Vol. 221 ( 0 ) page: 327-333   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  528. Structural characterization of Al1-xInxN lattice-matched to GaN Reviewed

    Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kashima Takayuki, Kato Hisaki, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 209 ( 0 ) page: 419-423   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  529. Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells Reviewed

    Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers   Vol. 39 ( 0 ) page: 413-416   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  530. Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GaInN active layer Reviewed

    Kamiyama Satoshi, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers   Vol. 39 ( 0 ) page: 390-392   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  531. Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design Reviewed

    Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   Vol. 39 ( 0 ) page: 2425-2427   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  532. The effect of isoelectronic In-doping on the structural and optical properties of (Al)GaN grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   Vol. 39 ( 0 ) page: 2385-2388   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  533. Gain-switching of GaInN multiquantum well laser diodes Reviewed

    Marinelli C, Khrushchev I Y, Rorison J M, Penty R V, White I H, Kaneko Y, Watanabe S, Yamada N, Takeuchi T, Amano H, Akasaki I, Hasnain G, Schneider R, Wang S-Y, Tan M R T

    Electronics Letters   Vol. 36 ( 0 ) page: 83-84   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  534. Nitride-based laser diodes using thick n-AlGaN layers Reviewed

    Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y W, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Y S, Yamada N

    Journal of Electronic Materials   Vol. 29 ( 0 ) page: 302-305   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  535. Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices Reviewed

    Wetzel C, Detchprohm T, Takeuchi T, Amano H, Akasaki I

    Journal of Electronic Materials   Vol. 29 ( 0 ) page: 252-255   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  536. Characterization of initial growth stage of GaInN multilayered structure by X-ray CTR scattering and X-ray reflectivity method Reviewed

    Tabuchi Masao, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu

    Hyomen Kagaku   Vol. 21 ( 0 ) page: 162-168   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  537. Effect of low-temperature deposited layer on the growth of Group III nitrides on sapphire Reviewed

    Amano Hiroshi, Akasaki Isamu

    Hyomen Kagaku   Vol. 21 ( 0 ) page: 126-133   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  538. Effect on GaN/Al017Ga083N and Al005Ga095N/Al017Ga083N quantum wells by isoelectronic in-doping during metalorganic vapor phase epitaxy Reviewed

    Kariya Michihiko, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 39 ( 0 ) page: L143-L145   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  539. Improvement of structural and optical properties of GaN and AlGaN using isoelectronic In doping Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Institute of Physics Conference Series   Vol. 166 ( 0 ) page: 471-474   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  540. Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells Reviewed

    Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I

    J. Apl. Phys.   Vol. 88 ( 0 ) page: 2677-2681   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  541. Multiple peak spectra from InGaN/GaN multiple quantum wells Reviewed

    Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 80 ( 0 ) page: 85-89   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  542. InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport Reviewed

    Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 77 ( 0 ) page: 1638-1640   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  543. Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   Vol. 76 ( 0 ) page: 876-878   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  544. Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant Reviewed

    Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 76 ( 0 ) page: 3388-3390   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  545. Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers Reviewed

    Chow W W, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 76 ( 0 ) page: 1647-1649   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  546. Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain Reviewed

    Shapiro N A, Kim Y, Feick H, Weber E R, Perlin P, Yang J W, Akasaki I, Amano H

    Physical Review B: Condensed Matter and Materials Physics   Vol. 62 ( 0 ) page: R16318-R16321   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  547. Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells Reviewed

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 62 ( 0 ) page: R13302-R13305   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  548. Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study Reviewed

    Hai P N, Chen W M, Buyanova I A, Monemar B, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 62 ( 0 ) page: R10607-R10609   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  549. Magneto-optical studies of the 088-eV photoluminescence emission in electron-irradiated GaN Reviewed

    Wagner Mt, Buyanova I A, Thinh N Q, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 62 ( 0 ) page: 16572-16577   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  550. Localized vibrational modes in GaN:O tracing the formation of oxygen DX-like centers under hydrostatic pressure Reviewed

    Wetzel C, Amano H, Akasaki I, Ager J W III, Grzegory I, Topf M, Meyer B K

    Physical Review B: Condensed Matter and Materials Physics   Vol. 61 ( 0 ) page: 8202-8206   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  551. Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga1-xInxN/GaN quantum-well structures Reviewed

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 61 ( 0 ) page: 2159-2163   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  552. Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes Reviewed

    Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 39 ( 0 ) page: L387-L389   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  553. Fabrication and characterization of GaN-based laser diode grown on thick n-AlGaN contact layer Reviewed

    Takeuchi T, Detchprohm T, Yano M, Yamaguchi M, Hayashi N, Iwaya M, Isomura K, Kimura K, Amano H, Akasaki I, Kaneko Y, Watanabe S, Yamaoka Y, Shioda R, Hidaka T, Kaneko Y, Yamada N

    Physica Status Solidi A: Applied Research   Vol. 176 ( 0 ) page: 31-34   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  554. Spectral study of photoluminescence from GaInN/GaN MQWs using CW and time-resolved measurements Reviewed

    Watanabe S, Yamada N, Yamada Y, Taguchi T, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 216 ( 0 ) page: 335-339   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  555. Photoluminescence investigations of AlGaN on GaN epitaxial films Reviewed

    Meyer Bruno K, Steude G, Goldner A, Hoffmann A, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 216 ( 0 ) page: 187-191   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  556. X-ray interference and crystal truncation rod observation of GaN and GaInN layers grown on sapphire with AlN buffer layer Reviewed

    Tabuchi Masao, Takeda Yoshikazu, Matsumoto Nobuhiro, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers   Vol. 38 ( 0 ) page: 281-284   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  557. Correlation of vibrational modes and DX-like centers in GaN:O Reviewed

    Wetzel C, Ager J W III, Topf M, Meyer B K, Amano H, Akasaki I

    Physica B: Condensed Matter Amsterdam   Vol. 273-274 ( 0 ) page: 109-112   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  558. Mg acceptors in GaN Dependence of the g-anisotropy on the doping concentration Reviewed

    Hofmann Detlev M, Burkhardt Wolfgang, Leiter Frank, Von Forster Walter, Alves Helder, Hofstaetter Albrecht, Meyer Bruno K, Romanov Nikolai G, Amano Hiroshi, Akasaki Isamu

    Physica B: Condensed Matter Amsterdam   Vol. 273-274 ( 0 ) page: 43-45   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  559. Energy loss rate of excitons in GaN Reviewed

    Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I

    Physica B: Condensed Matter Amsterdam   Vol. 272 ( 0 ) page: 409-411   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  560. Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer Reviewed

    Amano H, Iwaya M, Hayashi N, Kashima T, Nitta S, Wetzel C, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 216 ( 0 ) page: 683-689   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  561. Discrete Stark-like ladder in piezoelectric GaInN/GaN quantum wells Reviewed

    Wetzel C, Kasumi M, Detchprohm T, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 216 ( 0 ) page: 399-403   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  562. Improvement of low-intensity ultraviolet photodetectors based on AlGaN with low threading dislocation density Reviewed

    Pernot Cyril, Hirano A, Iwaya M, Detchprohm T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 176 ( 0 ) page: 147-151   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  563. Study on electroluminescence spectrum and waveguide loss of GaInN multiple quantum well lasers Reviewed

    Kaneko Y, Shioda R, Yamada N, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 176 ( 0 ) page: 137-140   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  564. GaN-based MQW light emitting diodes Reviewed

    Kato H, Koide N, Hirano A, Koike M, Amano H, Akasaki I

    Institute of Physics Conference Series   Vol. 162 ( 0 ) page: 31-35   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  565. Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    J. Apl. Phys.   Vol. 85 ( 0 ) page: 7682-7688   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  566. Piezoelectric Franz-Keldysh effect in strained (Ga,In)N/GaN heterostructures Reviewed

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    J. Apl. Phys.   Vol. 85 ( 0 ) page: 3786-3791   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  567. Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   Vol. 75 ( 0 ) page: 4106-4108   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  568. Improvement of far-field pattern in nitride laser diodes Reviewed

    Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Amano H, Akasaki I, Kaneko Yw, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Ys, Yamada N

    Appl. Phys. Lett.   Vol. 75 ( 0 ) page: 2960-2962   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  569. Quantum-well width dependence of threshold current density in InGaN lasers Reviewed

    Chow W W, Amano H, Takeuchi T, Han J

    Appl. Phys. Lett.   Vol. 75 ( 0 ) page: 244-246   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  570. Stress evolution during metalorganic chemical vapor deposition of GaN Reviewed

    Hearne S, Chason E, Han J, Floro J A, Figiel J, Hunter J, Amano H, Tsong I S T

    Appl. Phys. Lett.   Vol. 74 ( 0 ) page: 356-358   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  571. Optical properties of doped InGaN/GaN multiquantum-well structures Reviewed

    Dalfors J, Bergman J P, Holtz P O, Sernelius B E, Monemar B, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 74 ( 0 ) page: 3299-3301   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  572. Optical investigations of AlGaN on GaN epitaxial films Reviewed

    Steude G, Meyer B K, Goldner A, Hoffmann A, Bertram F, Christen J, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 74 ( 0 ) page: 2456-2458   1999

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  573. Electronic structure of the 088-eV luminescence center in electron-irradiated gallium nitride Reviewed

    Buyanova I A, Wagner Mt, Chen W M, Edwards N V, Monemar B, Lindstrom J L, Bremser M D, Davis R F, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 60 ( 0 ) page: 1746-1751