Updated on 2024/10/19

写真a

 
AMANO, Hiroshi
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering
Title
Professor
Contact information
メールアドレス
External link

Degree 7

  1. 名誉博士号 ( 2017.1   グアテマラパジェ大学 ) 

  2. 名誉博士号 ( 2016.6   モンゴル国立大学 ) 

  3. 名誉博士号 ( 2016.5   フランスオーベルニュ大学ブレイズパスカル大学 ) 

  4. 名誉博士号 ( 2016.4   イタリアパドバ大学 ) 

  5. 名誉博士号 ( 2015.9   スウェーデンリンショーピング大学 ) 

  6. 名誉博士号 ( 2015.6   ロシアノボシビルスク州立大学 ) 

  7. Doctor of Engineering ( 1989.1   Nagoya University ) 

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Research Interests 10

  1. Light emitting diodelaser diode, High power and high frequency transistor, Solar cells, Nano structure, Crystal growth of compound semiconductors, Semiconductor device physics

  2. Solar cells

  3. ナノ構造

  4. パワーデバイス 

  5. ミリ波 マイクロ波デバイス

  6. Light emitting diodelaser diode

  7. Nano structure

  8. Semiconductor device physics

  9. Crystal growth of compound semiconductors

  10. High power and high frequency transistor

Research Areas 1

  1. Others / Others  / Electrrical and Electronic Materials Engineering

Current Research Project and SDGs 3

  1. 安心・安全で省エネルギー化に貢献する半導体デバイス

  2. Crystal growth and device fabrications of group III nitride semiconductors

  3. 卓越大学院DIIプログラム

Research History 15

  1. Institute of Materials and Systems for Sustainability   Center for Integrated Research of Future Electronics   Director of CIRFE

    2015.10

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    Country:Japan

  2. Nagoya University   Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section   Professor

    2015.10

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  3. 名城大学特別栄誉教授

    2015.7

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    Country:Japan

  4. Meijo University

    2015.7

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  5. 名古屋市立大学 客員教授

    2015.4 - 2016.3

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    Country:Japan

  6. 名古屋大学特別教授

    2015.3

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    Country:Japan

  7. Nagoya University   Professor

    2015.3

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  8. Tsinghua University, China   Professor Emeritus

    2014.11

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  9. Nagoya University   Graduate School of Engineering Graduate School of Engineering

    2011.4

  10. Nagoya University   Graduate School of Engineering Graduate School of Engineering

    2011.4

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  11. Nagoya University   Graduate School of Engineering, Department of Electrical Engineering and Computer Science   Professor

    2010.4 - 2015.10

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    Country:Japan

  12. Professor, Meijo University

    2002.4 - 2010.3

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    Country:Japan

  13. Associate Professor

    1998.4 - 2002.3

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    Country:Japan

  14. Assistant Professor, Meijo University

    1992.4 - 1998.3

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    Country:Japan

  15. Research Associate, Nagoya University

    1988.4 - 1992.3

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    Country:Japan

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Education 3

  1. Nagoya University   Graduate School, Division of Engineering   Department of Electrical and Electornics Engineering

    1985.4 - 1988.3

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    Country: Japan

  2. Nagoya University   Graduate School, Division of Engineering   Department of Electrical and Electronics Enginnering

    1983.4 - 1985.3

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    Country: Japan

  3. Nagoya University   Faculty of Engineering   Department of Electronics

    1979.4 - 1983.3

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    Country: Japan

Professional Memberships 34

  1. 日本学士院   会員

    2022.12

  2. IEEE   メンバー

    2022.1

  3. 中国工程院   外国籍院士

    2019.11

  4. National Academy of Inventors,USA   NAI Fellow

    2017.10

  5. 照明学会   名誉会員

    2016.9

  6. APS   Fellow

    2015.9

  7. 日本工学アカデミー   会員

    2015.6

  8. 日本化学会   名誉会員

    2015.6

  9. NAE(United States National Academy of Engineering)

    2015.6

  10. The Institue of Electrical Engineers of Japan

    2015.5

  11. 日本表面科学会   特別栄誉会員

    2015.5

  12. 日本物理学会   名誉会員

    2015.4

  13. The Institue of Electronics, Information and Communication Engineering

    2015.3

  14. 電子情報通信学会   名誉員

    2014.12

  15. Institute of Physics UK   Fellow

    2014.12

  16. Material Research Society   Regular Member

    2010.1

  17. 応用物理学会   名誉会員

    1984.10

  18. OSA

  19. SPIE

  20. Japan Society for Applied Physics

  21. Institute of Physics

  22. The Institue of Electrical Engineers of Japan

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  23. The Institue of Electronics, Information and Communication Engineering

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  24. 照明学会

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  25. 日本表面科学会

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  26. 日本物理学会

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  27. 日本工学アカデミー

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  28. 日本化学会

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  29. Japan Society for Applied Physics

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  30. SPIE

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  31. OSA

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  32. NAE(United States National Academy of Engineering)

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  33. Material Research Society

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  34. APS

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Committee Memberships 30

  1. IWUMD-2017   組織委員長  

    2016.10 - 2017.12   

  2. 国立研究会開発法人産業術総合研究所   柱冠フェロー  

    2016.8   

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    Committee type:Government

  3. OPIC2017   組織委員  

    2016.8   

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    Committee type:Academic society

  4. International Solid State Lighting Alliance   国際諮問委員  

    2016.8   

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    Committee type:Academic society

  5. 国際物理オリンピック日本大会   組織委員会副委員長  

    2016.5 - 2023.8   

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    Committee type:Other

  6. 日本結晶成長学会   評議員  

    2016.4 - 2019.3   

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    Committee type:Academic society

  7. 33rd International Conference on the Physics of Semiconductors国際諮問委員会   委員長  

    2015.9 - 2016.8   

  8. ・結晶成長の科学と技術第161委員会   委員  

    2015.8 - 2016.3   

  9. 2015 Rusnanoprize Award Committee   Member  

    2015.7   

  10. 2015 Rusnanoprize Award Committee   Member  

    2015.7   

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  11. 2015 Rusnanoprize Award Committee   Member  

    2015.7   

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  12. Optics & Photonics International Congress 2016組織委員会   委員  

    2015.7 - 2016.6   

  13. 江崎玲於奈賞委員会   委員  

    2015.6   

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    Committee type:Other

  14. 日本フォトニクス協議会 JPC関西   特別顧問  

    2015.5   

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    Committee type:Other

  15. 大阪大学光科学センター   特別顧問  

    2015.5 - 2017.9   

  16. ISPlasma2016/IC-PLANT2016組織委員会   委員長  

    2015.5 - 2016.4   

  17.   組織委員会委員     

    2014.7 - 2015.3   

  18. ISCS2014   Regional program chair  

    2013.4   

  19.   Program Committee Chair  

    2013.4 - 2014.3   

  20. OPIC2013   組織委員  

    2012.7   

  21. OPIC2013   組織委員  

    2012.7   

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  22. レーザ学会   専門委員会  

    2012.5 - 2015.3   

  23. 産業用LED応用研究会   委員長  

    2012.4   

  24.   プログラム委員会副委員長  

    2012.2 - 2012.4   

  25. 4th International Symposium on Growth of III-Nitrides   Program Committee Chair  

    2011.7 - 2012.7   

  26. ICMOVPE-XVI   International Advisory COmmittee  

    2011.6 - 2012.5   

  27. International Workshop on Nitride Semiconductors2012 (IWN2012)   Executive committee chair  

    2011.4 - 2012.10   

  28. 名古屋市科学館企画調査委員会   企画調査委員  

    2010.8   

  29. 電子部品・材料研究専門委員会   専門委員  

    2010.5 - 2012.5   

  30. ワイドギャップ半導体光・電子デバイス第162委員会   特別顧問  

    2010.4 - 2017.3   

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Awards 36

  1. 卓越教授

    2023.4   名古屋大学   卓越教授

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    Country:Japan

  2. 特別教授

    2019.10   広島大学   特別教授

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    Country:Japan

  3. 応用物理学会化合物半導体エレクトロニクス業績賞(赤﨑勇賞)

    2016.3   応用物理学会   青色及び紫外光デバイスの開発

    天野 浩

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  4. 丸八会顕彰

    2015.10   丸八会  

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    Country:Japan

  5. 第10回業績賞及び赤﨑勇賞

    2015.10   日本結晶成長学会   高品質窒化物半導体の創出と青色・紫外光素子の実現

    天野 浩

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  6. 2015 Asia Game Changers

    2015.10   Asia Society  

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    Award type:International academic award (Japan or overseas)  Country:United States

  7. 愛知県名誉県民

    2015.9   愛知県  

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    Country:Japan

  8. 産学官連携功労者表彰 日本学術会議会長賞,

    2015.8   日本学術会議会長   「短波長紫外LED」の開発

    天野 浩

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    Country:Japan

  9. 浜松市名誉市民

    2015.7   浜松市  

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    Country:Japan

  10. 中日文化賞

    2015.5   中日新聞  

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    Country:Japan

  11. 科学技術分野の文部科学大臣表彰 科学技術賞研究部門

    2015.4   文部科学大臣   

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    Country:Japan

  12. 特別教授

    2015.4   名古屋大学   特別教授

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    Country:Japan

  13. 特別栄誉教授

    2015.4   名城大学   特別栄誉教授

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    Country:Japan

  14. 日本スウェーデン協会 名誉会員

    2015.3   日本スウェーデン協会  

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    Country:Japan

  15. 電子情報通信学会 特別功績賞

    2015.3   電子情報通信学会  

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    Country:Japan

  16. 名古屋市学術表彰

    2015.1   名古屋市  

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    Country:Japan

  17. 愛知県学術顕彰

    2015.1   愛知県  

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    Country:Japan

  18. 静岡県民栄誉賞

    2015.1   静岡県  

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    Country:Japan

  19. ノーベル物理学賞

    2014.12   ノーベル財団  

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    Country:Sweden

  20. 文化功労者顕彰

    2014.11   文部科学大臣  

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    Country:Japan

  21. 文化勲章

    2014.11   首相  

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    Country:Japan

  22. APEX/JJAP Editorial Contribution Award

    2014.3   Japan Society of Applied Physics  

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    Country:Japan

  23. IOP Fellow

    2011.10   Institute of Physics  

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    Country:United Kingdom

  24. IOP Fellow

    2011.10   Institute of Physics   IOP Fellow

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    Country:United Kingdom

  25. ナイスステップな研究者2009

    2009.12   文部科学省 科学技術政策研究所  

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    Country:Japan

  26. ナイスステップな研究者2009

    2009.12   科学技術・政策研究所   青色及び紫外光デバイスの開発

    天野 浩

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    Country:Japan

  27. 応用物理学会フェロー

    2009.9   応用物理学会  

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    Country:Japan

  28. 日本結晶成長学会論文賞

    2008.11   日本結晶成長学会  

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    Country:Japan

  29. 第1回 P&I パテント・オブ・ザ・イヤー

    2004.11   東京工業大学精密工学研究所  

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    Country:Japan

  30. SSDM論文賞

    2003.9   SSDM  

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    Country:Japan

  31. 武田賞

    2002.11   竹田財団  

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    Country:Japan

  32. 丸文学術賞

    2001.3   丸文財団  

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    Country:Japan

  33. 英国Rank賞

    1998.12   Rank Foundation  

  34. 応用物理学会賞C(会誌賞)

    1998.9   応用物理学会  

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    Country:Japan

  35. IEEE/LEOS Engineering Achievement Award

    1996.11   IEEE/LEOS  

  36. Fifth Optoelectronics Conference A Special Award

    1994.7  

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Papers 841

  1. Observation of 2D-magnesium-intercalated gallium nitride superlattices. Reviewed

    Wang J, Cai W, Lu W, Lu S, Kano E, Agulto VC, Sarkar B, Watanabe H, Ikarashi N, Iwamoto T, Nakajima M, Honda Y, Amano H

    Nature   Vol. 631 ( 8019 ) page: 67 - 72   2024.7

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Nature  

    Since the demonstration of p-type gallium nitride (GaN) through doping with substitutional magnesium (Mg) atoms1,2, rapid and comprehensive developments, such as blue light-emitting diodes, have considerably shaped our modern lives and contributed to a more carbon-neutral society3–5. However, the details of the interplay between GaN and Mg have remained largely unknown6–11. Here we observe that Mg-intercalated GaN superlattices can form spontaneously by annealing a metallic Mg film on GaN at atmospheric pressure. To our knowledge, this marks the first instance of a two-dimensional metal intercalated into a bulk semiconductor, with each Mg monolayer being intricately inserted between several monolayers of hexagonal GaN. Characterized as an interstitial intercalation, this process induces substantial uniaxial compressive strain perpendicular to the interstitial layers. Consequently, the GaN layers in the Mg-intercalated GaN superlattices exhibit an exceptional elastic strain exceeding −10% (equivalent to a stress of more than 20 GPa), among the highest recorded for thin-film materials12. The strain alters the electronic band structure and greatly enhances hole transport along the compression direction. Furthermore, the Mg sheets induce a unique periodic transition in GaN polarity, generating polarization-field-induced net charges. These characteristics offer fresh insights into semiconductor doping and conductivity enhancement, as well as into elastic strain engineering of nanomaterials and metal–semiconductor superlattices13.

    DOI: 10.1038/s41586-024-07513-x

    Scopus

    PubMed

  2. 15 GHz GaN Hi-Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W Reviewed

    Kawasaki, S; Kumabe, T; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 71 ( 3 ) page: 1408 - 1415   2024.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IEEE Transactions on Electron Devices  

    The p+-n-n - n+ structure, known as Hi-Lo structure, was investigated in gallium nitride (GaN) single-drift-region (SDR) impact ionization avalanche transit-time (IMPATT) diodes to improve the output power and efficiency. The 15 GHz GaN Hi-Lo IMPATT diode was designed according to the Scharfetter and Gummel model under realistic conditions, suppressing the tunneling current (<10-4 cm2) and breakdown voltage (< 400 V). Even in such conditions, the calculated efficiency was higher than that of the p+-n abrupt junction structure and the improvement of RF characteristics was expected. The fabricated GaN Hi-Lo IMPATT diodes showed a clear avalanche breakdown and a pulsed microwave oscillation in the frequency range from 15 to 17 GHz. The maximum peak output power of 25.5 W and the efficiency of 2% were achieved, showing the highest values on microwave band GaN IMPATT diodes, and we confirmed that the Hi-Lo structure is effective for the high-power and high-efficiency operation of GaN IMPATT diodes.

    DOI: 10.1109/TED.2023.3345822

    Web of Science

    Scopus

  3. Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping Reviewed

    Kumabe T., Yoshikawa A., Kawasaki S., Kushimoto M., Honda Y., Arai M., Suda J., Amano H.

    IEEE Transactions on Electron Devices     2024

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IEEE Transactions on Electron Devices  

    Nearly ideal vertical Al<inline-formula> <tex-math notation="LaTeX">$_{\textit{x}}$</tex-math> </inline-formula>Ga<inline-formula> <tex-math notation="LaTeX">$_{\text{1}-\textit{x}}$</tex-math> </inline-formula>N (<inline-formula> <tex-math notation="LaTeX">$\text{0.7} \leq \textit{x} &lt; \text{1.0}$</tex-math> </inline-formula>) p-n diodes are fabricated on an aluminum nitride (AlN) substrate. Distributed polarization doping (DPD) was employed for both p-type and n-type layers of the p-n junction, instead of conventional impurity doping, to overcome the major bottleneck of AlN-based material: the control of conductivity. Capacitance&#x2013;voltage measurements revealed that the net charge concentration agreed well with the DPD charge concentration expected from the device layer structure. The fabricated devices exhibited a low turn-on voltage of 6.5 V, a low differential specific ON-resistance of 3 M<inline-formula> <tex-math notation="LaTeX">$\Omega$</tex-math> </inline-formula> cm<inline-formula> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula>, electroluminescence (maximum at 5.1 eV), and an ideality factor of 2 for a wide range of temperatures (room temperature&#x2014;573 K). Moreover, the breakdown electric field was 7.3 MV cm<inline-formula> <tex-math notation="LaTeX">$^{-\text{1}}$</tex-math> </inline-formula>, which was almost twice as high as the reported critical electric field of GaN at the same doping concentration. These results clearly demonstrate the usefulness of DPD in the fabrication of high-performance AlN-based power devices.

    DOI: 10.1109/TED.2024.3367314

    Scopus

  4. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz Reviewed

    Kawasaki, S; Kumabe, T; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H

    IEEE ELECTRON DEVICE LETTERS   Vol. 44 ( 8 ) page: 1328 - 1331   2023.8

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IEEE Electron Device Letters  

    An experimental study on the effects of junction capacitance and current density on the oscillation characteristics of GaN single-drift-region (SDR) impact ionization avalanche transit-time (IMPATT) diodes were carried out using GaN p+-n abrupt junction diodes of various diameters, 200, 150, and 100 μ m , with a depletion layer width of 2 μ m. The fabricated diodes showed a clear avalanche breakdown at 315 V and a pulsed microwave oscillation with a peak output power exceeding 30 dBm. The oscillation frequency depended on junction diameter and current density. It was widely modulated from 8.56 to 21.1 GHz with decreasing junction diameter and increasing current density. The highest oscillation frequency was obtained with a current density of 13.8 kA/cm2 and a junction diameter of 100 μ m. A numerical calculation based on Read-type small-signal theory was carried out and found to well explain the experimental results.

    DOI: 10.1109/LED.2023.3285938

    Web of Science

    Scopus

  5. Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes Reviewed

    Kwon, W; Kawasaki, S; Watanabe, H; Tanaka, A; Honda, Y; Ikeda, H; Iso, K; Amano, H

    IEEE ELECTRON DEVICE LETTERS   Vol. 44 ( 7 ) page: 1172 - 1175   2023.7

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IEEE Electron Device Letters  

    The reverse leakage mechanism of threading dislocation (TD)-free gallium nitride (GaN) vertical p-n diode was investigated in various temperature range, and it was compared with that of the p-n diode having a threading dislocation density (TDD) of around 10^6 cm -2. The reverse leakage current was increased markedly by increasing the temperature from 400 K, the dominant mechanism was explained by thermionic and Poole-Frenkel emissions for TD-free and high-TDD p-n diodes, respectively. At high temperatures and electric fields, the leakage current of the high TDD p-n diode showed 2 times higher than the TD-free p-n diode. These results indicate that the performance of vertical GaN devices, especially when employed at high temperatures and electric fields, can be enhanced by removing TDs.

    DOI: 10.1109/LED.2023.3274306

    Web of Science

    Scopus

  6. Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN Reviewed

    Kumabe, T; Kawasaki, S; Watanabe, H; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 122 ( 25 )   2023.6

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Applied Physics Letters  

    We investigated the hole mobility limiting factors in dopant-free p-type distributed polarization-doped (DPD) AlGaN layers by an experimental method. p-DPD AlGaN exhibited a higher hole mobility than GaN:Mg with a similar room temperature hole concentration across all temperature ranges owing to the absence of ionized impurity scattering. In addition, unlike in n-DPD AlGaN, alloy scattering was not always critical in p-DPD AlGaN. The extracted alloy scattering potential was only 0.3 eV, which resulted in a reduced effect of alloy scattering and originated from a small valence band offset in the GaN/AlN heterojunction system. The results suggest that DPD principally enables the fabrication of low-resistance p-type nitride semiconductor thin films as a result of the high hole concentration and high hole mobility.

    DOI: 10.1063/5.0155363

    Web of Science

    Scopus

  7. High In content nitride sub-micrometer platelet arrays for long wavelength optical applications Reviewed

    Cai, WT; Furusawa, Y; Wang, J; Park, JH; Liao, YQ; Cheong, HJ; Nitta, S; Honda, Y; Pristovsek, M; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 121 ( 21 )   2022.11

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Applied Physics Letters  

    We demonstrate high, up to 30% In content InGaN sub-micrometer platelets on GaN by metalorganic vapor phase epitaxy. These InGaN platelets were selectively grown on flat GaN seeds formed in sub-micrometer-scale openings in a SiNx mask. The platelets were highly uniform without any dislocations or pits, with an atomically flat (0001) surface. The typical height was ∼120 nm, which significantly exceeded the normal critical layer thickness of a c-plane InGaN film. The strain state was comprehensively characterized by microbeam x-ray diffraction and transmission electron microscopy. Due to a gradual elastic relaxation of strain, the In content increased almost linearly from bottom to top because of the strong strain-dependent In incorporation. These platelets can serve as high-quality strain-relaxed templates for long wavelength micro-light-emitting diodes.

    DOI: 10.1063/5.0120723

    Web of Science

    Scopus

  8. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy Reviewed

    Ohnishi, K; Fujimoto, N; Nitta, S; Watanabe, H; Lu, S; Deki, M; Honda, Y; Amano, H

    JOURNAL OF APPLIED PHYSICS   Vol. 132 ( 14 )   2022.10

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Journal of Applied Physics  

    The precise control of Mg concentration ([Mg]) in p-type GaN layers from 2.3 × 1016 to 2.0 × 1019 cm-3 was demonstrated by halide vapor phase epitaxy (HVPE) on n-type GaN (0001) freestanding substrates. [Mg] in GaN layers could be controlled well by varying the input partial pressure of MgCl2 formed by a chemical reaction between MgO solid and HCl gas under the thermodynamic equilibrium condition. In the sample with [Mg] of 2.0 × 1019 cm-3, a step-bunched surface was observed because the surface migration of Ga adatoms was enhanced by the surfactant effect of Mg atoms. The samples show high structural qualities determined from x-ray rocking curve measurements. The acceptor concentration was in good agreement with [Mg], indicating that almost all Mg atoms act as acceptors. The compensating donor concentrations in the samples were higher than the concentrations of Si, O, and C impurities. We also obtained the Mg acceptor level at a sufficiently low net acceptor concentration of 245 ± 2 meV. These results show that the HVPE method is promising for fabricating GaN vertical power devices, such as n-channel metal-oxide-semiconductor field-effect transistors.

    DOI: 10.1063/5.0122292

    Web of Science

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  9. Laser slice thinning of GaN-on-GaN high electron mobility transistors Reviewed

    Tanaka, A; Sugiura, R; Kawaguchi, D; Wani, Y; Watanabe, H; Sena, H; Ando, Y; Honda, Y; Igasaki, Y; Wakejima, A; Ando, Y; Amano, H

    SCIENTIFIC REPORTS   Vol. 12 ( 1 ) page: 7363   2022.5

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    As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal. In the previous report, from the perspective of GaN substrate processing, we could only show that the GaN substrate could be sliced by a laser and that the sliced GaN substrate could be reused. In this study, we newly investigated the applicability of this method as a device fabrication process. We demonstrated the thinning of GaN-on-GaN high-electron-mobility transistors (HEMTs) using a laser slicing technique. Even when the HEMTs were thinned by laser slicing to a thickness of 50 mm after completing the fabrication process, no significant fracture was observed in these devices, and no adverse effects of laser-induced damage were observed on electrical characteristics. This means that the laser slicing process can be applied even after device fabrication. It can also be used as a completely new semiconductor process for fabricating thin devices with thicknesses on the order of 10 mm, while significantly reducing the consumption of GaN substrates.

    DOI: 10.1038/s41598-022-10610-4

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  10. Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection Reviewed

    Zhang, ZY; Kushimoto, M; Yoshikawa, A; Aoto, K; Schowalter, LJ; Sasaoka, C; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 4 )   2022.4

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    We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode, fabricated on a single-crystal AlN substrate when operating at 5 °C. The threshold current density and device series resistance were reduced by improvements to the epitaxial structure and electrode arrangement. A peak wavelength of 274.8 nm was observed for lasing at a drive current over 110 mA, which corresponded to a threshold current density of 3.7 kA cm-2. The operating voltage at the threshold current was as low as 9.6 V.

    DOI: 10.35848/1882-0786/ac6198

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  11. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg Reviewed

    Lu, S; Deki, M; Wang, J; Ohnishi, K; Ando, Y; Kumabe, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 119 ( 24 )   2021.12

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    We have demonstrated a fabrication process for the Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg. An Ohmic contact with a contact resistance of 0.158 ω cm2 is realized on p-GaN ([Mg] = 1.3 × 1017 cm-3). The contact resistance of p-type GaN with higher Mg concentration ([Mg]=1.0 × 1019 cm-3) can also be reduced to 2.8 × 10-5 ω cm2. A localized contact layer is realized without any etching or regrowth damage. The mechanism underlying this reduced contact resistance is studied by scanning transmission electron microscopy with energy dispersive x-ray spectroscopy and secondary ion mass spectrometry, representing a mutual diffusion of Ga and Mg atoms on the interface. Reductions in the barrier height and surface depletion width with the nitrogen-annealed Mg layer are confirmed by XPS and Hall effect measurements qualitatively.

    DOI: 10.1063/5.0076764

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  12. Smart-cut-like laser slicing of GaN substrate using its own nitrogen Reviewed

    Tanaka, A; Sugiura, R; Kawaguchi, D; Yui, T; Wani, Y; Aratani, T; Watanabe, H; Sena, H; Honda, Y; Igasaki, Y; Amano, H

    SCIENTIFIC REPORTS   Vol. 11 ( 1 ) page: 17949   2021.9

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    We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almost no kerf loss, and the thickness of the layer damaged by laser slicing was about 40 µm. We demonstrated that a standard high quality homoepitaxial layer can be grown on the sliced surface after removing the damaged layer by polishing.

    DOI: 10.1038/s41598-021-97159-w

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  13. Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy Reviewed

    Ohnishi K., Hamasaki K., Nitta S., Fujimoto N., Watanabe H., Honda Y., Amano H.

    Journal of Crystal Growth   Vol. 648   2024.12

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    Results of a thermodynamic study of Sn doping and fabrication of a Sn-doped GaN freestanding layer with high structural quality by halide vapor phase epitaxy (HVPE) are described in this paper. Thermodynamic analysis revealed that SnCl2 and/or SnCl act as Sn precursors through the reaction between Sn metal and HCl gas. The equilibrium partial pressures of SnCl2 and SnCl increase with the input HCl partial pressure. To generate Sn precursors effectively, it is desirable that the reaction between Sn metal and HCl gas occurs in the inert gas ambient. On the basis of results of the thermodynamic study, the Sn-doped GaN freestanding layer with a Sn concentration of 5.7 × 1019 cm−3 is fabricated by removing the GaN seed substrate after HVPE growth. The Sn-doped GaN freestanding layer has high crystal quality, and the lattice constants along the c- and a-axes of the Sn-doped GaN freestanding layer are larger than those of the GaN seed substrate because of the high electron density and the size effect of Sn atoms.

    DOI: 10.1016/j.jcrysgro.2024.127923

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  14. Discovering the incorporation limits for wurtzite AlP<inf>y</inf>N<inf>1−y</inf> grown on GaN by metalorganic vapor phase epitaxy Reviewed

    Yang X., Furusawa Y., Kano E., Ikarashi N., Amano H., Pristovsek M.

    Applied Physics Letters   Vol. 125 ( 13 )   2024.9

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    We report on the growth of AlPN on GaN/sapphire templates by metalorganic vapor phase epitaxy using tertiarybutylphosphine (tBP) and NH3 as group-V precursors. P is easy to incorporate into the group-III lattice site, forming PAl anti-site defects and shrinking lattice constants that are even beyond AlN since Al is larger than P. We found that higher temperatures favor P incorporation on the N-sublattice, forming AlPyN1−y, while growth temperatures below 1000 °C result in dominant P incorporation on the Al-sublattice, forming PAl anisites. Similarly, larger NH3 flows stabilize GaN, leading to flat interfaces, but favor the formation of PAl. Furthermore, the P incorporation into AlPyN1−y is non-linear. At very low tBP flows, it initially increases to reach a maximum. Further increasing the tBP flow increases mostly the incorporation of P on the Al-sublattice, and the c-lattice constant decreases again. This leaves a small window of low V/III ratios below 5 and low P/N ratios of 1% or smaller, leading up to ∼4% P incorporation at typical growth temperatures of GaN. However, at such low V/III ratios, GaN is not stable even with N2 carrier gas and requires optimized switching sequences to minimize its decomposition and preserve flat interfaces. Eventually, a 10 nm coherent layer of AlP0.01N0.99 could be reproducibly grown on top of GaN channels with a smooth surface, an abrupt AlPN/GaN interface, and a two-dimensional electron gas with an electron mobility of ∼675 cm2/V s and a sheet carrier density of 1.5 × 1013 cm−2 at room temperature.

    DOI: 10.1063/5.0225115

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  15. Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure Reviewed

    Sikder, B; Hossain, T; Xie, QY; Niroula, J; Rajput, NS; Teo, KH; Amano, H; Palacios, T; Chowdhury, N

    APPLIED PHYSICS LETTERS   Vol. 124 ( 24 )   2024.6

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    This Letter reports an investigation of hole transport in p-GaN/AlGaN/GaN heterostructures through experimental and theoretical analyses under varied conditions. Highly non-linear current-voltage (I-V) characteristics, obtained via the linear transmission line method measurements, are utilized for this study. At low bias voltage, the transport can be ascribed to the Schottky nature of the contact, while at high bias, the conduction is observed to be governed by space-charge limited current (SCLC). The Schottky characteristics (Schottky barrier height and non-ideality factor) and the SCLC exponent were analyzed for devices with varying contact spacings and at different high temperatures. The SCLC exponent, m, is in the range of 2 ≤ m ≤ 4 depending on the applied voltage range, revealing the existence of the trap states in the channel region. The findings of this work indicate that the charge injection, field-induced ionization, and trap states in the p-GaN channel are critical factors in the current transport of p-GaN/AlGaN/GaN heterostructure.

    DOI: 10.1063/5.0203344

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  16. Recent advances in micro-pixel light emitting diode technology Reviewed

    Park, JH; Pristovsek, M; Amano, H; Seong, TY

    APPLIED PHYSICS REVIEWS   Vol. 11 ( 2 )   2024.6

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    Display technology has developed rapidly in recent years, with III-V system-based micro-light-emitting diodes (μLEDs) attracting attention as a means to overcome the physical limitations of current display systems related to their lifetime, brightness, contrast ratio, response time, and pixel size. However, for μLED displays to be successfully commercialized, their technical shortcomings need to be addressed. This review comprehensively discusses important issues associated with μLEDs, including the use of the ABC model for interpreting their behavior, size-dependent degradation mechanisms, methods for improving their efficiency, novel epitaxial structures, the development of red μLEDs, advanced transfer techniques for production, and the detection and repair of defects. Finally, industrial efforts to commercialize μLED displays are summarized. This review thus provides important insights into the potential realization of next-generation display systems based on μLEDs.

    DOI: 10.1063/5.0177550

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  17. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers Reviewed

    Chichibu, SF; Shima, K; Uedono, A; Ishibashi, S; Iguchi, H; Narita, T; Kataoka, K; Tanaka, R; Takashima, S; Ueno, K; Edo, M; Watanabe, H; Tanaka, A; Honda, Y; Suda, J; Amano, H; Kachi, T; Nabatame, T; Irokawa, Y; Koide, Y

    JOURNAL OF APPLIED PHYSICS   Vol. 135 ( 18 )   2024.5

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    For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely, nonradiative recombination centers and deep-state radiative recombination centers, on the carrier recombination dynamics is an essential task. By using the combination of time-resolved photoluminescence and positron annihilation spectroscopy (PAS) measurements, the origins of major MGRCs in the state-of-the-art GaN epilayers, bulk crystals, and Mg-implanted layers were identified, and their concentrations were quantified for deriving the capture coefficients of minority carriers. In this article, potential standardization of the room-temperature photoluminescence lifetime for the near-band-edge emission ( τ PL RT ) as the concentration of major MGRCs well below the detection limit of PAS is proposed. For n-GaN substrates and epilayers grown from the vapor phase, τ PL RT was limited by the concentration of carbon on N sites or divacancies comprising a Ga vacancy (VGa) and a N vacancy (VN), [VGaVN], when carbon concentration was higher or lower, respectively, than approximately 1016 cm−3. Here, carbon and VGaVN act as major deep-state radiative and nonradiative recombination centers, respectively, while major MGRCs in bulk GaN crystals were identified as VGa(VN)3 vacancy clusters in Na-flux GaN and VGa or VGaVN buried by a hydrogen and/or VGa decorated with oxygen on N sites, VGa(ON)3-4, in ammonothermal GaN. The values of τ PL RT in n-GaN samples are compared with those of p-GaN, in which τ PL RT was limited by the concentration of VGa(VN)2 in Mg-doped epilayers and by the concentrations of VGaVN and (VGaVN)3 in Mg-implanted GaN right after the implantation and after appropriate activation annealing, respectively.

    DOI: 10.1063/5.0201931

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  18. Metastable atomic-ordered configurations for Al<sub>1/2</sub>Ga<sub>1/2</sub>N predicted by Monte-Carlo method based on first-principles calculations Reviewed

    Gueriba, JS; Mizuseki, H; Cadatal-Raduban, M; Sarukura, N; Kawazoe, Y; Nagasawa, Y; Hirano, A; Amano, H

    JOURNAL OF PHYSICS-CONDENSED MATTER   Vol. 36 ( 13 )   2024.4

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    Metastability of Aln/12Ga1−n/12N (n = 2–10: integer) with the 1–2 monolayer (ML) in-plane configuration towards the c [0001] direction has been demonstrated recently. To theoretically explain the existence of these metastable structures, relatively large calculation cells are needed. However, previous calculations were limited to the use of small calculation cell sizes to estimate the local potential depth (∆σ) of ordered Al1/2Ga1/2N models. In this work, we were able to evaluate large calculation cells based on the interaction energies between proximate Al atoms (δEAl–Al) in AlGaN alloys. To do this, δEAl–Al values were estimated by first-principles calculations (FPCs) using a (5a1 × 5a2 × 5c) cell. Next, a survey of the possible ordered configurations using various large calculation cell models was performed using the estimated δEAl–Al values and the Monte-Carlo method. Then, various ∆σ values were estimated by FPCs and compared with the configurations previously reported by other research groups. We found that the ordered configuration obtained from the (4a1 × 2a2 × 1c) calculation cell (C42) has the lowest ∆σ of −9.3 meV/cation and exhibited an in-plane configuration at the c(0001) plane having (–Al–Al–Ga–Ga–) and (–Al–Ga–) sequence arrangements observed along the m{11̄00} planes. Hence, we found consistencies between the morphology obtained from experiment and the shape of the primitive cell based on our numerical calculations.

    DOI: 10.1088/1361-648X/ad1137

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  19. Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy Reviewed

    Honda, A; Watanabe, H; Takeuchi, W; Honda, Y; Amano, H; Kato, T

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 63 ( 4 )   2024.4

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    We investigated the C-related complexes in highly C-doped GaN by electron spin resonance (ESR) spectroscopy, Fourier transform IR spectroscopy (FTIR), and minority carrier transient spectroscopy (MCTS) measurements. In the ESR spectra, two resonances with g values of 2.02 and 2.04 were found to be assigned by (0/−) deep acceptor and (+/0) charge transition levels of carbon substituting for nitrogen site (CN). In the FTIR spectra, two local vibrational modes positioned at 1679 and 1718 cm−1 were confirmed to be associated with tri-carbon complexes of CN-CGa-CN (basal) and CN-CGa-CN (axial), respectively. In the MCTS spectra, we observed the hole trap level of E v + 0.25 ± 0.1 eV associated with the tri-carbon complexes, which are the dominant C-related defects, suggesting that these complexes affect the electronic properties in the highly C-doped GaN.

    DOI: 10.35848/1347-4065/ad3b54

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  20. Improving the Barrier Height of N-Polar GaN Schottky Diodes Using Mg-Diffusion Process Reviewed

    Sarkar, B; Wang, J; Watanabe, H; Amano, H

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 71 ( 3 ) page: 1416 - 1420   2024.3

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    In this work, we report a low-cost methodology to increase the barrier height of N-polar GaN Schottky diodes. Physical vapor deposition (PVD) of Mg followed by a thermal diffusion anneal at 800 °C leads to the formation of N-polar GaN Camel diode offering a larger barrier height than the conventional N-polar GaN Schottky diodes. The increase in barrier height after the Mg diffusion process is validated using current-voltage ({I} - {V}) and capacitance-voltage (CV) measurements. A barrier height of 0.7 eV and a near-unity ideality factor observed in the N-polar GaN Camel diode confirms that the proposed Mg diffusion process is an alternative method for improving the performance of future N-polar GaN diodes.

    DOI: 10.1109/TED.2023.3341831

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  21. Study on Degradation of Deep-Ultraviolet Laser Diode Reviewed

    Zhang, ZY; Yoshikawa, A; Kushimoto, M; Sasaoka, C; Amano, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE     2024.2

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    The degradation of an AlGaN-based deep-ultraviolet laser diode during operation is studied. A rapid increase in threshold current without any facet mirror damage under direct current stress below the threshold current is observed, which is considered to limit the lifetime of continuous wave lasing to the level of seconds. The evolution of current–light and current–voltage characteristics suggests that the dominant mechanism of degradation is the increased loss of carriers before they can reach the active layer, i.e., the decrease in carrier injection efficiency. The decrease in emission intensity, which is more pronounced at lower current densities, and subsequent increase in sub-threshold current indicate the increase in defect density under current stress, which is similar to the well-analyzed degradation mechanism found in AlGaN-based light-emitting diodes.

    DOI: 10.1002/pssa.202300946

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  22. Sn-doped n-type GaN layer with high electron density of 1020 cm-3 grown by halide vapor phase epitaxy Reviewed

    Hamasaki, K; Ohnishi, K; Nitta, S; Fujimoto, N; Watanabe, H; Honda, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   Vol. 628   2024.2

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    A Sn-doped n-type GaN layer with a high electron density of 2 × 1020 cm−3 and a low resistivity of 8.7 × 10−4 Ω∙cm was grown by halide vapor phase epitaxy (HVPE). Sn doping was performed through the reaction between Sn metal and HCl gas. The Sn concentration markedly increased with decreasing growth temperature and the activation energy of Sn desorption from the GaN surface was found to be 4.1 eV. Smooth surfaces were obtained by introducing the Sn precursor even though the samples were grown at a low temperature of 905 °C, suggesting that Sn atoms act as surfactants and promote the migration of Ga adatoms. Almost all the Sn atoms act as donors in GaN below the Sn concentration of 2 × 1020 cm−3. These results indicate that using the Sn donor is promising for fabricating low-resistivity n-type GaN substrates by HVPE.

    DOI: 10.1016/j.jcrysgro.2023.127529

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  23. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate Reviewed

    Watanabe, H; Nitta, S; Ando, Y; Ohnishi, K; Honda, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   Vol. 628   2024.2

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    DOI: 10.1016/j.jcrysgro.2023.127552

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  24. Impact of unintentionally formed compositionally graded layer on carrier injection efficiency in AlGaN-based deep-ultraviolet laser diodes Reviewed

    Zhang Z., Yoshikawa A., Kushimoto M., Aoto K., Sasaoka C., Amano H.

    Applied Physics Letters   Vol. 124 ( 6 )   2024.2

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    Increasing the injection efficiency, a critical factor constraining the reduction in threshold current in AlGaN-based deep-ultraviolet laser diodes, represents one of the paramount remaining technical challenges. In this study, the impact of compositionally graded layers that were unintentionally formed at the interface between the p-cladding and the core layer on carrier injection efficiency was analyzed. Experimental evaluations using laser diodes have shown that the elimination of an unintentionally formed layer increases the injection efficiency above the threshold current, from the conventional 3% to 13%. It has been postulated that the electron overflow toward the p-side exerts a substantial deleterious effect on the injection efficiency. An improvement in this aspect is achieved by increasing the electron-blocking capability due to the improved interface abruptness between the p-cladding layer and the core layer. The lasing threshold was strongly reduced, and characteristic temperature increased from 76 to 107 K for the improved devices.

    DOI: 10.1063/5.0184543

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  25. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing Reviewed

    Ito, S; Sato, S; Bockowski, M; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Yoshida, K; Minagawa, H; Hagura, N

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   Vol. 547   2024.2

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    Lanthanide (Ln)-implanted gallium nitride (GaN) semiconductors have a variety of potential applications as light-emitting devices and quantum light sources, but their optical properties are not well understood. In this study, we investigate the room temperature optical properties of praseodymium (Pr) ion implanted single-crystal GaN and their changes upon ultrahigh pressure annealing (UHPA) up to 1480 °C. Photoluminescence (PL) spectra, luminescence transition lifetime, and excitation cross section of the implanted Pr ions are analyzed. In addition, the recovery of implantation-induced damage and the thermal diffusion of implanted Pr ions by UHPA are investigated by X-ray diffraction, Raman spectroscopy, and secondary ion mass spectrometry. The results show that the implantation damage is recovered by annealing at temperatures above 1200 °C, but Pr ions thermally diffuse to the surface as the annealing temperature increases. The annealing temperature at which a maximum PL intensity is obtained increases with increasing the implantation dose. However, the PL intensity decreases in all cases after annealing at 1480 °C, indicating that a quenching factor is dominant in this temperature range.

    DOI: 10.1016/j.nimb.2023.165181

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  26. Impurity reduction in lightly doped <i>n</i>-type gallium nitride layer grown via halogen-free vapor-phase epitaxy Reviewed

    Kimura, T; Shimazu, H; Kataoka, K; Itoh, K; Narita, T; Uedono, A; Tokuda, Y; Tanaka, D; Nitta, S; Amano, H; Nakamura, D

    APPLIED PHYSICS LETTERS   Vol. 124 ( 5 )   2024.1

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    The development of gallium nitride (GaN) vertical-type metal-oxide-semiconductor field-effect transistors and p-i-n diode devices has gathered increasing attention. These devices require an n-type drift layer with a low doping level of 1016 cm−3 or less, minimized point defects inhibiting electron conduction, and a layer approximately 10 μm thick. Therefore, a practical method with a growth rate of at least several tens of μm/h and impurity concentrations of less than 1015 cm−3, except for that of dopants, is necessary. Halogen-free vapor-phase epitaxy (HF-VPE) has a high growth rate suitable for fabricating thick drift layers and utilizes a simple reaction between Ga vapor and ammonia gas (without a corrosive halogen gas), resulting in lower impurity levels. Herein, we eliminated the quartz content from the high-temperature zone to reduce the excess unintentional Si doping and identified that the nitrile gloves used for the growth preparation are other impurity contamination sources. We obtained a lightly n-type ([Si]=∼1016 cm−3) GaN layer, in which C, O, B, Fe, Mg, Al, Ca, Cr, Zn, Ni, Mn, and Ti impurity contents were below the detection limits of secondary ion mass spectrometry. Deep-level transient spectroscopy revealed that electron traps at EC − 0.26 and at EC − 0.59 eV were 2.7 × 1013 and 5.2 × 1014 cm−3, respectively. Moreover, the Hall effect analysis showed the acceptor-type defect-compensating donor content as approximately 2.7 × 1015 cm−3, resulting in a high electron mobility of HF-VPE GaN in the 30-710 K temperature range. Furthermore, we identified the Ca impurity as a deep acceptor, another killer defect leading to mobility collapse.

    DOI: 10.1063/5.0191774

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  27. Droop and light extraction of InGaN-based red micro-light-emitting diodes Reviewed

    Park, JH; Pristovsek, M; Cai, WT; Kumabe, T; Choi, SY; Lee, DS; Seong, TY; Amano, H

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 39 ( 1 )   2024.1

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    In this letter, we investigate the impact of periphery, width, length and area on the external quantum efficiency (EQE) of stripe-type InGaN-based red micro-light-emitting diodes (µLEDs). A longer periphery resulted in a higher light extraction efficiency ( η e ) via the sidewall regardless of the area of the µLEDs. However, as the injection current increased a somewhat larger efficiency droop was observed at the longer periphery due to current crowding. Additionally, larger µLEDs experienced more self-heating than smaller ones, resulting in a red shift of wavelengths and a larger efficiency droop. When the current density exceeded 100 A cm−2, the EQE ratio of smaller-area μLEDs to larger-area ones increased significantly due to the difference in efficiency droop. Besides, a short light propagation length and a long emission width yielded a higher η e . Hence, the periphery, width, length and area of the µLEDs determine EQE, which provides insight into the pixel design of µLED displays.

    DOI: 10.1088/1361-6641/ad0b88

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  28. Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector Reviewed

    Nakagawa, H; Hayashi, K; Miyazawa, A; Honda, Y; Amano, H; Aoki, T; Nakano, T

    SENSORS AND MATERIALS   Vol. 36 ( 1 ) page: 169 - 176   2024

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    Group-III nitride semiconductors, such as gallium nitride (GaN), have been proposed as novel materials for radiation detection owing to their wide bandgap and their ability to operate at high temperatures. In this study, the radiation detection properties of GaN PIN diode detectors were evaluated at high temperatures (~573 K). The energy spectrum peak profiles of241Am α-particles were obtained at different temperatures, confirming the operation of GaN PIN diodes up to 573 K. The peak positions shifted toward the lower-energy side and the full width at half maximum (FWHM) of the detection energy peak improved with increasing temperature. Furthermore, the variation in electron carrier mobility–lifetime product (μeτe) between 293 and 573 K was not significant. These results indicate the potential high-temperature operation of group-III nitride semiconductors. Additionally, the variation in each detection characteristic was caused by increasing the atmospheric temperature, which affected the mobility, lattice scattering, bandgap, and built-in potential differently.

    DOI: 10.18494/SAM4647

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  29. Light-Stimulated Artificial Synapses with Accelerating Photopic Adaption Based on III-Nitride Heterojunction Transistor Reviewed

    Yan J., Sun Z., Fang L., Yan Y., Shi Z., Shi F., Jiang C., Choi H.W., Amano H., Liu Y., Wang Y.

    ACS Photonics     2024

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    Neuromorphic computing, inspired by biological synapses, has emerged as a pivotal approach to overcome the limitations of von Neumann architecture. In this work, we employ a three-terminal III-nitride metal-oxide-semiconductor field-effect transistor (MOSFET) structure based on the GaN-on-silicon platform, characterized by ultralow power consumption, to emulate artificial synapses through light stimulation. Remarkably, our device exhibits a minimal power consumption of 7 fJ per synaptic event, surpassing that of biological synapses (∼10 fJ). Notably, we observe that the paired pulse facilitation (PPF) index can be modulated by the external light intensity, pulse width, and light pulse interval. By manipulating the light intensity and pulse width, we achieve a PPF index exceeding 300% in our device. Furthermore, our devices demonstrate gate-tunable synaptic plasticity, enabling electric/light cooperative control and increasing the tuning freedom. Finally, acceleration of photopic adaption and a 91.28% handwritten digit recognition accuracy are achieved, which provide strong support in potential visual sensory applications.

    DOI: 10.1021/acsphotonics.4c01038

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  30. SEM imaging of high aspect ratio trench by selectively controlling the electron beam irradiation using photocathode Reviewed

    Arakawa, Y; Niimi, K; Otsuka, Y; Sato, D; Koizumi, A; Shikano, H; Iijima, H; Nishitani, T; Honda, Y; Amano, H

    METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVIII   Vol. 12955   2024

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    Observation of high aspect ratio (HAR) structures is a difficult challenge in metrology and inspection in semiconductor manufacturing. In imaging HAR trenches using a scanning electron microscope (SEM), obtaining SEM images without information loss due to whiteouts and blackouts is challenging. One reason for the difficulty is that the probe current is constant in conventional SEM imaging. Suppose the probe current is increased to detect more secondary electrons from the bottom of the trench. In that case, excessive secondary electron emission from the top of the trench will result in a whiteout. The SEM equipped with a photocathode electron gun (PC-SEM) can change the probe current on a pixel-by-pixel basis by applying a pulsed electron beam. In this study, we propose two methods of SEM observation for HAR trenches. The first method uses a lower probe current at the top of the trench and a higher probe current at the bottom. With this method, the top and bottom of the trench could be observed simultaneously without any whiteout or blackout. Another method is to adjust the probe current so that the SEM image is in a constant grayscale. In this case, information about the sample appears in the probe current. The image of the probe current captured the trench bottom more clearly than the conventional SEM image under equivalent conditions.

    DOI: 10.1117/12.3010733

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  31. Photoelectron beam from semiconductor photocathodes leading to new inspection technologies

    Nishitani T., Arakawa Y., Niimi K., Otsuka Y., Sato D., Koizumi A., Shikano H., Iijima H., Honda Y., Amano H.

    Proceedings of SPIE - The International Society for Optical Engineering   Vol. 12955   2024

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    Semiconductor photocathodes are electron beam sources with versatile electron beam performance such as pulsed structure as well as high beam current with high monochromaticity. Photocathode using GaN semiconductor material has solved the durability problem, resulting in the development of a compact photocathode electron gun suitable for industrial technology. The photocathode electron gun can be retrofitted to existing electron microscopes, has the same brightness as a cold field emitter cathode, and the pulsed beam not only brings selective beam irradiation to arbitrary area in the field of view in SEM imaging, but also allows blur-free TEM imaging of moving samples.

    DOI: 10.1117/12.3010730

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  32. Local voltage contrast changes in MOSFET using scanning electron microscopy with photoelectron beam technology

    Sato, D; Arakawa, Y; Niimi, K; Fukuroi, K; Tajiri, Y; Koizumi, A; Shikano, H; Iijima, H; Nishitani, T; Honda, Y; Amano, H

    METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVIII   Vol. 12955   2024

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    Scanning electron microscopy (SEM) is used for metrology and inspection in semiconductor manufacturing. In addition, electrical defects such as short circuits and unintentional insulation appear as contrast differences called voltage contrast (VC) in SEM under low acceleration voltage conditions. Moreover, by using pulsed electron beams from a photocathode, the probe current can be arbitrarily changed by pixel in the SEM image. Using this technology, we succeeded in observing the change in the VC of the drain in the metal-oxide-semiconductor field effect transistor (MOSFET) by changing in electron beam irradiation on the gate only. In this study, to estimate the threshold voltage of n-type MOSFET (nMOS) from VC, we investigated quantitative changes in the specimen current of the drain (Id) and the gate (Ig) due to gate e-beam irradiation ON/OFF during SEM imaging. The landing energy of the electron beam was set to 0.8 keV, the probe current was 6.3 pA, and the e-beam was irradiated onto only the gate and drain electrodes. Id and Ig, which showed a positive value at the beginning, decreased with time, and saturated at negative values. When the electron beam irradiation to the gate was turned OFF, the Id decreased further and reached saturation. When the gate e-beam irradiation was turned ON again, Ig recovered to a positive and then saturated again to a negative value. On the other hand, the drain Id increased when the gate irradiation was turned ON and returned to the same value as before it was turned OFF.

    DOI: 10.1117/12.3009947

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  33. Anisotropic hole transport along [0001] and [1120] direction in p-doped (1010) GaN Reviewed

    Lin, YY; Wang, J; Pristovsek, M; Honda, Y; Amano, H

    JOURNAL OF APPLIED PHYSICS   Vol. 134 ( 23 )   2023.12

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    The anisotropic hole transport along [0001] and [1120] in the p-doped (1010) GaN layer was compared for layers grown on bulk (1010) GaN substrates and on (1010) sapphire. The sheet resistance along [0001] was 1.1 times larger on GaN substrates and even 1.2 times larger on sapphire than that along [1120]. The anisotropic hole transport on bulk GaN substrates is due to the anisotropy of the hole’s effective mass and the different contribution of carriers in different bands, whereas the larger anisotropy for GaN on sapphire is also due to additional scattering at stacking faults. The annealing process of metal Mg applied to the m-plane p-type GaN successfully results in a robust p-type ohmic contact, functioning as a p++ layer.

    DOI: 10.1063/5.0177681

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  34. Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN Reviewed

    Kumabe, T; Kawasaki, S; Watanabe, H; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 123 ( 25 )   2023.12

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    Minority carrier properties in dopant-free p-type distributed polarization doped (DPD) AlGaN layers were investigated on the basis of the forward-biased current density-voltage (J-V) characteristics of p-n+ diodes. The fabricated p-DPD AlGaN/n+-AlGaN:Si diodes exhibited ideal electrical characteristics despite the absence of acceptor atoms in the p-type layer. The extracted Shockley-Read-Hall lifetime exceeded 300 ps, which was longer than that reported for p-GaN:Mg on GaN substrates with a similar acceptor concentration (20-50 ps). Moreover, the electron diffusion coefficient was about 20 cm2 s−1 at any temperature, which was convincing in terms of the electron mobility in DPD layers. The results suggest that p-DPD AlGaN has more desirable minority carrier properties than conventional p-GaN:Mg, particularly for bipolar device applications.

    DOI: 10.1063/5.0180062

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  35. Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process Reviewed

    Sarkar, B; Wang, J; Badami, O; Pramanik, T; Kwon, W; Watanabe, H; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 16 ( 12 )   2023.12

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    In this letter, we show that low-cost physical vapor deposition of Mg followed by a thermal diffusion annealing process increases the effective barrier height at the metal/Ga-polar GaN Schottky interface. Thus, for the first time, GaN Camel diodes with improved barrier height and turn-on voltage were realized compared to regular GaN Schottky barrier diodes. Temperature-dependent current-voltage characteristics indicated a near-homogeneous and near-ideal behavior of the GaN Camel diode. The analysis performed in this work is thought to be promising for improving the performance of future GaN-based unipolar diodes.

    DOI: 10.35848/1882-0786/ad0db9

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  36. Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs Reviewed

    Yoshikawa, A; Zhang, ZY; Kushimoto, M; Aoto, K; Sasaoka, C; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 123 ( 22 )   2023.11

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    One approach to improving the output power of ultraviolet (UV-C) light-emitting diodes (LEDs) is to adopt an electron-blocking layer (EBL) with a high barrier. However, the intended effect may not be realized because of the composition pulling effect, which is the unintended occurrence of a gradient layer at an AlGaN/AlGaN hetero-interface with substantial differences in the Al composition. Here, we demonstrate that low-temperature growth (i.e., <1000 °C) can be used to control the unintentional gradient layer at an AlN/AlGaN hetero-interface between a barrier layer and AlN-EBL with a difference in Al compositions of more than 30%. LEDs with an emission wavelength of 265 nm were fabricated, and an AlN-EBL was grown at low temperature to realize an abrupt interface. At an applied current of 100 mA, growing the EBL under low-temperature conditions improved the forward voltage by 0.5 V and remarkably improved the peak luminous intensity by 1.4-1.6 times. Our results can be used to realize UV-C LEDs with a steep EBL and further improve their device characteristics.

    DOI: 10.1063/5.0183320

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  37. Multiplexing of bias-controlled modulation modes on a monolithic III-nitride optoelectronic chip Reviewed

    Zhang, H; Ye, ZQ; Yan, JB; Shi, F; Shi, ZM; Li, DB; Liu, YH; Amano, H; Wang, YJ

    OPTICS LETTERS   Vol. 48 ( 19 ) page: 5069 - 5072   2023.10

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    III-nitride optoelectronic chips have tremendous potential for developing integrated computing and communication systems with low power consumption. The monolithic, top–down approaches are advantageous for simplifying the fabrication process and reducing the corresponding manufacturing cost. Herein, an ultraviolet optical interconnection system is investigated to discover the way of multiplexing between emission and absorption modulations on a monolithic optoelectronic chip. All on-chip components, the transmitter, monitor, waveguide, modulator, and receiver, share the same quantum well structure. As an example, two bias-controlled modulation modes are used to modulate video and audio signals in the experiment presented in this Letter. The results show that our on-chip optoelectronic system works efficiently in the near ultraviolet band, revealing the potential breadth of GaN optoelectronic integration.

    DOI: 10.1364/OL.503429

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  38. Dislocation Suppresses Sidewall-Surface Recombination of Micro-LEDs Reviewed

    Park, JH; Pristovsek, M; Cai, WT; Cheong, HJ; Kang, CM; Lee, DS; Seong, TY; Amano, H

    LASER & PHOTONICS REVIEWS   Vol. 17 ( 10 )   2023.10

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    Nonradiative recombination rate that consists of dislocation-related nonradiative recombination rate (A0) and surface recombination rate (As) is one of the major parameters determining the performance of microlight-emitting diodes (µLEDs). Recent demonstrations improving the efficiency of blue InGaN or red AlGaInP µLEDs using specific methods such as atomic layer deposition or chemical treatment confirm the suppression of As. However, it is hardly found that those methods effectively improve the efficiency of red InGaN µLEDs so far. Here, it is discovered that the dislocation leads to an ineffective As. First, an intrinsic As degrades the external quantum efficiency (EQE) of blue InGaN µLEDs, resulting in EQE decreases with shrinking size. Second, panchromatic cathodoluminescence finds evidence that most of the carriers can be trapped before reaching the sidewall due to high A0. This results in shortened diffusion length of carriers and reduces the number of carriers reaching the sidewall. Consequently, the opposite trend of increasing EQE with shrinking size occurs in the case of red InGaN µLEDs due to an ineffective As. Furthermore, an 8.3 nm quantum well of InGaN with 13% Indium content that can reach a ≈690 nm wavelength at the low current is shown.

    DOI: 10.1002/lpor.202300199

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  39. UV/DUV light emitters Reviewed

    Khan, A; Kneissl, M; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 123 ( 12 )   2023.9

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    DOI: 10.1063/5.0174270

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  40. Impact of graphene state on the orientation of III-nitride Reviewed

    Park, JH; Hu, N; Park, MD; Wang, J; Yang, X; Lee, DS; Amano, H; Pristovsek, M

    APPLIED PHYSICS LETTERS   Vol. 123 ( 12 )   2023.9

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    We attempted to grow (10-13) semi-polar GaN on graphene to confirm the possibility of a remote epitaxy of semi-polar GaN. Single crystalline (10-13) GaN was obtained on an optimized template using optimized growth conditions. However, (10-13), (0002), and other GaN orientations were found under the same growth conditions on a graphene-coated template. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy revealed that multi-domain GaN and (0002) GaN occurred in areas with a damaged graphene interfacial layer and intact graphene, respectively. Raman spectroscopy confirmed that graphene could survive under the growth conditions used here. Using cross-sectional scanning electron microscopy, we propose a simple approach to distinguish damaged graphene. Although the remote epitaxy of semi-polar GaN has not been demonstrated despite the usage of an optimized template and growth conditions, our results confirm the importance of the interfacial state in determining the crystallinity of the overgrown layer.

    DOI: 10.1063/5.0157588

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  41. Investigation of Electrical Properties of N-Polar AlGaN/AlN Heterostructure Field-Effect Transistors Reviewed

    Inahara, D; Matsuda, S; Matsumura, W; Okuno, R; Hanasaku, K; Kowaki, T; Miyamoto, M; Yao, YZ; Ishikawa, Y; Tanaka, A; Honda, Y; Nitta, S; Amano, H; Kurai, S; Okada, N; Yamada, Y

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 220 ( 16 )   2023.8

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    AlN-based field-effect transistors (FETs) enable high-breakdown voltage, high drain current, and high-temperature operation. To realize high-frequency devices, N-polar AlGaN/AlN heterostructure FETs are focused on. N-polar Al0.1Ga0.9N/Al0.9Ga0.1N/AlN FET is fabricated using metal–organic vapor-phase epitaxy, and its electrical characteristics are evaluated. An N-polar AlN layer is grown on a sapphire substrate with a misorientation angle of 2.0° toward m-axis, on which a 20 nm thick Al0.9Ga0.1N base layer and a 20 nm Al0.1Ga0.9N channel layer are grown. The static FET operation is confirmed to exhibit an n-channel and pinch-off. Normally, during operation with a turn-on voltage of −3.2 V, a high operating breakdown voltage of 620 V and high operating temperature of 280 °C are also confirmed.

    DOI: 10.1002/pssa.202200871

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  42. Inactivation characteristics of a 280 nm Deep-UV irradiation dose on aerosolized SARS-CoV-2 Reviewed

    Takamure, K; Iwatani, Y; Amano, H; Yagi, T; Uchiyama, T

    ENVIRONMENT INTERNATIONAL   Vol. 177   page: 108022   2023.7

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    A non-filter virus inactivation unit was developed that can control the irradiation dose of aerosolized viruses by controlling the lighting pattern of a 280 nm deep-UV (DUV)-LED and the air flowrate. In this study, the inactivation properties of aerosolized SARS-CoV-2 were quantitatively evaluated by controlling the irradiation dose to the virus inside the inactivation unit. The RNA concentration of SARS-CoV-2 remained constant when the total irradiation dose of DUV irradiation to the virus exceeded 16.5 mJ/cm2. This observation suggests that RNA damage may occur in regions below the detection threshold of RT-qPCR assay. However, when the total irradiation dose was less than 16.5 mJ/cm2, the RNA concentration monotonically increased with a decreasing LED irradiation dose. However, the nucleocapsid protein concentration of SARS-CoV-2 was not predominantly dependent on the LED irradiation dose. The plaque assay showed that 99.16% of the virus was inactivated at 8.1 mJ/cm2 of irradiation, and no virus was detected at 12.2 mJ/cm2 of irradiation, resulting in a 99.89% virus inactivation rate. Thus, an irradiation dose of 23% of the maximal irradiation capacity of the virus inactivation unit can activate more than 99% of SARS-CoV-2. These findings are expected to enhance versatility in various applications. The downsizing achieved in our study renders the technology apt for installation in narrow spaces, while the enhanced flowrates establish its viability for implementation in larger facilities.

    DOI: 10.1016/j.envint.2023.108022

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  43. Stress relaxation of AlGaN on nonpolar m-plane GaN substrate Reviewed

    Lin, YY; Sena, H; Frentrup, M; Pristovsek, M; Honda, Y; Amano, H

    JOURNAL OF APPLIED PHYSICS   Vol. 133 ( 22 )   2023.6

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    The stress relaxation with increasing thickness of metal-organic vapor phase epitaxy grown Al0.19Ga0.81N on quasi-bulk (101 ¯0) m-plane GaN substrates was investigated by x-ray diffraction. The anisotropic in-plane stress leads to an orthorhombic distortion of the lattice, which requires special mathematical treatment. Extending earlier works, we developed a method to calculate the distortion along [12 ¯10], [0001], and [101 ¯0] and obtained the lattice parameters, Al content, and strain values. The stress relaxation along the two in-plane directions involves two different mechanisms. First, the stress along [12 ¯10] relaxes by the onset of misfit dislocations through the { 10 1 ¯ 0 } ⟨ 1 2 ¯ 10 ⟩ slip system while for thicker layers the stress along [0001] relaxes by crack formation. Comparing the cathodoluminescence emission at room temperature with the expected bandgap showed that both tensile in-plane strains along [12 ¯10] and [0001] decrease the bandgap.

    DOI: 10.1063/5.0149838

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  44. Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro-LEDs Reviewed

    Park, JH; Pristovsek, M; Cai, WT; Cheong, HJ; Tanaka, A; Furusawa, Y; Han, DP; Seong, TY; Amano, H

    ADVANCED OPTICAL MATERIALS   Vol. 11 ( 10 )   2023.5

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    The sidewall condition is a key factor determining the performance of micro-light emitting diodes (µLEDs). In this study, equilateral triangular III-nitride blue µLEDs are prepared with exclusively m-plane sidewall surfaces to confirm the impact of sidewall conditions. It is found that inductively coupled plasma-reactive ion etching (ICP-RIE) causes surface damages to the sidewall and results in rough surface morphology. As confirmed by time-resolved photoluminescence (TRPL) and X-ray photoemission spectroscopy (XPS), tetramethylammonium hydroxide (TMAH) eliminates the etching damage and flattens the sidewall surface. After ICP-RIE, 100 µm2-µLEDs yield higher external quantum efficiency (EQE) than 400 µm2-µLEDs. However, after TMAH treatment, the peak EQE of 400 µm2-µLEDs increases by ≈10% in the low current regime, whereas that of 100 µm2-µLEDs slightly decreases by ≈3%. The EQE of the 100 µm2-µLEDs decreases after TMAH treatment although the internal quantum efficiency (IQE) increases. Further, the IQE of the 100 µm2-µLEDs before and after TMAH treatment is insignificant at temperatures below 150 K, above which it becomes considerable. Based on PL, XPS, scanning transmission electron microscopy, and scanning electron microscopy results, mechanisms for the size dependence of the EQE of µLEDs are explained in terms of non-radiative recombination rate and light extraction.

    DOI: 10.1002/adom.202203128

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  45. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current-voltage characteristic Reviewed

    Lu, S; Deki, M; Kumabe, T; Wang, J; Ohnishi, K; Watanabe, H; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 122 ( 14 )   2023.4

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    We have demonstrated the fabrication process for a lateral p-type Schottky barrier diode (SBD) with the annealed Mg ohmic contact layer on a MOVPE-grown p-GaN wafer and measured the electrical characteristic of the diode. Because of the selective-area ohmic contact, the interface between the Schottky electrode and p-type GaN is well protected from any damage introduced by dry-etching or regrowth. The ideality factor of the forward current-voltage characteristic is as low as 1.09 at room temperature and an on-off ratio above 109 is also achieved. Various metals are deposited as the Schottky electrode and the work function dependence of the Schottky barrier height is confirmed with a pinning factor of 0.58. The temperature dependence of the current-voltage characteristic indicates that the GaN p-type SBD still fits the thermionic emission mode at 600 K with an ideality factor of 1.1. The reverse current of the p-SBD is also studied with the Poole-Frenkel emission model, and the trap energy level in the p-GaN is confirmed.

    DOI: 10.1063/5.0146080

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  46. Simultaneous light emission and detection of an AlGaInP quantum well diode Reviewed

    Ye, ZQ; Zhang, H; Gao, XM; Fu, K; Zeng, HB; Liu, YH; Wang, YJ; Amano, H

    AIP ADVANCES   Vol. 13 ( 4 )   2023.4

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    When a quantum well (QW) diode is biased with a forward voltage and illuminated with an external shorter-wavelength light, the device simultaneously emits and detects light, with the injected current and the induced current mixed inside the wells. Separating these superimposed and dynamic electrical signals is useful for the development of multifunctional displays that can simultaneously transmit and receive light signals. By utilizing the unique overlap between the electroluminescence and detection spectra, we establish a wireless optical communication system using two AlGaInP diodes that have identical QW structures. The communication distance is 25 m, with one diode functioning as the transmitter and the other as the receiver. In particular, at the receiver end, the QW diode demonstrates simultaneous light emission and reception ability, and the mixed signals can be efficiently extracted, suggesting great potential for applications from light communication to advanced displays.

    DOI: 10.1063/5.0142093

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  47. 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters. Reviewed

    Jmerik V, Nechaev D, Semenov A, Evropeitsev E, Shubina T, Toropov A, Yagovkina M, Alekseev P, Borodin B, Orekhova K, Kozlovsky V, Zverev M, Gamov N, Wang T, Wang X, Pristovsek M, Amano H, Ivanov S

    Nanomaterials (Basel, Switzerland)   Vol. 13 ( 6 )   2023.3

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    DOI: 10.3390/nano13061077

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  48. A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes Invited Reviewed

    Nagata, K; Matsubara, T; Saito, Y; Kataoka, K; Narita, T; Horibuchi, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Takeuchi, T; Amano, H

    CRYSTALS   Vol. 13 ( 3 )   2023.3

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    Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts. UV-light-transparent anode structures are considered as one of the solutions to increase a light output power. To this end, the present study focuses on developing a transparent AlGaN homoepitaxial tunnel junction (TJ) as the anode of a deep-UV LED. Deep-UV LEDs composed of n+/p+-type AlGaN TJs were fabricated under the growth condition that reduced the carrier compensation in the n+-type AlGaN layers. The developed deep-UV LED achieved an operating voltage of 10.8 V under a direct current (DC) operation of 63 A cm−2, which is one of the lowest values among devices composed of AlGaN tunnel homojunctions. In addition, magnesium zinc oxide (MgZnO)/Al reflective electrodes were fabricated to enhance the output power of the AlGaN homoepitaxial TJ LED. The output power was increased to 57.3 mW under a 63 A cm−2 DC operation, which was 1.7 times higher than that achieved using the conventional Ti/Al electrodes. The combination of the AlGaN-based TJ and MgZnO/Al reflective contact allows further improvement of the light output power. This study confirms that the AlGaN TJ is a promising UV-transmittance structure that can achieve a high light-extraction efficiency.

    DOI: 10.3390/cryst13030524

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  49. Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN-Transition from Dissolution Stage to Growth Stage Conditions. Reviewed

    Schimmel S, Tomida D, Ishiguro T, Honda Y, Chichibu SF, Amano H

    Materials (Basel, Switzerland)   Vol. 16 ( 5 )   2023.2

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    With the ammonothermal method, one of the most promising technologies for scalable, cost-effective production of bulk single crystals of the wide bandgap semiconductor GaN is investigated. Specifically, etch-back and growth conditions, as well as the transition from the former to the latter, are studied using a 2D axis symmetrical numerical model. In addition, experimental crystal growth results are analyzed in terms of etch-back and crystal growth rates as a function of vertical seed position. The numerical results of internal process conditions are discussed. Variations along the vertical axis of the autoclave are analyzed using both numerical and experimental data. During the transition from quasi-stable conditions of the dissolution stage (etch-back process) to quasi-stable conditions of the growth stage, significant temperature differences of 20 K to 70 K (depending on vertical position) occur temporarily between the crystals and the surrounding fluid. These lead to maximum rates of seed temperature change of 2.5 K/min to 1.2 K/min depending on vertical position. Based on temperature differences between seeds, fluid, and autoclave wall upon the end of the set temperature inversion process, deposition of GaN is expected to be favored on the bottom seed. The temporarily observed differences between the mean temperature of each crystal and its fluid surrounding diminish about 2 h after reaching constant set temperatures imposed at the outer autoclave wall, whereas approximately quasi-stable conditions are reached about 3 h after reaching constant set temperatures. Short-term fluctuations in temperature are mostly due to fluctuations in velocity magnitude, usually with only minor variations in the flow direction.

    DOI: 10.3390/ma16052016

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  50. Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates Reviewed

    Cai, WT; Wang, J; Park, JH; Furusawa, Y; Cheong, HJ; Nitta, S; Honda, Y; Pristovsek, M; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( 2 )   2023.2

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    We demonstrated nanoplatelet In x Ga1−x N pseudosubstrates with In content varying from 0 to 0.3 on low-dislocation-density GaN substrates. These nanoplatelets efficiently relax in-plane strain, thus allowing for the use of a thick active layer to reduce built-in polarization. The 15 nm thick InGaN active layers grown under the same conditions on these nanoplatelets showed a remarkable cathodoluminescence redshift from 460 to 617 nm, suggesting enhanced In incorporation efficiency in InGaN nanoplatelets with higher In content. Moreover, the 617 nm-emitting sample presented an imperceptible blueshift under excitation-power-dependent photoluminescence, indicating a weak polarization field introduced by the high-In-content pseudosubstrates and the thick active layer.

    DOI: 10.35848/1347-4065/acb74c

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  51. Particle Collection Characteristics of Electrostatic Precipitator with Flat Plate Collection Electrodes

    TAKAMURE Kotaro, IWATANI Yasumasa, AMANO Hiroshi, YAGI Tetsuya, UCHIYAMA Tomomi

    The Proceedings of Mechanical Engineering Congress, Japan   Vol. 2023 ( 0 ) page: S054-05   2023

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    <p>An electrostatic precipitator suitable for the collection of aerosol-sized particles is developed. This device is a two-stage electrostatic precipitator divided into a corona discharge part and a collection electrode part. Positive ion is charged to the virus particles by corona discharge, and the negative pole of the collection electrode installed in the later stage collects these particles. The particle collection performance of the system is investigated when the inlet velocity (inlet flowrate) is varied. As a result, even at the same inlet velocity, the collection rate increased with smaller particle size. Furthermore, the collection efficiency of particles decreased with increasing flow velocity.</p>

    DOI: 10.1299/jsmemecj.2023.s054-05

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  52. Numerical simulation and validation of carbon incorporation in GaN epitaxial growth by MOVPE method

    MUKAIYAMA Yuji, WATANABE Hirotaka, NITTA Shugo, IIZUKA Masaya, AMANO Hiroshi

    The Proceedings of The Computational Mechanics Conference   Vol. 2023.36 ( 0 ) page: OS-1406   2023

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Japan Society of Mechanical Engineers  

    <p>One of the crucial challenges in GaN epitaxial growth by metalorganic vapor phase epitaxy (MOVPE) method is the control of carbon (C) incorporation, which affects the resistivity of the individual layer of high-power and high-frequency devices based on GaN. Incorporating C into the GaN epilayer depends on various process parameters, such as growth temperature, pressure, carrier gas, flow rates of source gases, and reactor type. To determine the process parameters that control incorporated C concentration and uniformity, we have developed a novel numerical model for C incorporation into the grown GaN epilayer using MOVPE method. The developed model considers C incorporation through the decomposition of Ga source gas. We have implemented this model in a commercial crystal growth simulator, Virtual Reactor Nitride Edition, developed by STR. This study used experimental data to evaluate the dependence of temperature, growth rate, and V/III ratio of C incorporation predicted by the simulations. These results showed a strong correlation between the C concentration and these parameters, and good agreement with the experimental data.</p>

    DOI: 10.1299/jsmecmd.2023.36.os-1406

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  53. Metal Stop Laser Drilling for Blind via Holes of GaN-on-GaN Devices Reviewed

    Sasaoka C., Ando Y., Takahashi H., Ikarashi N., Amano H.

    Physica Status Solidi (A) Applications and Materials Science     2023

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    The metal stop laser drilling of GaN-on-GaN devices is demonstrated using a UV sub-nanosecond laser as a light source. By monitoring the Bremsstrahlung emission at the drilling point, metal stops with a precision higher than 1 μm are realized for vias with a depth of 100 μm. From in situ laser-induced breakdown spectroscopy measurements, it is shown that endpoint detection is realized with high signal-to-noise ratio owing to the difference in the emission process between the strongly excited semiconductor and the metal. Herein, a through-substrate electrode with a resistance of less than 5 mΩ on GaN-on-GaN high-electron-mobility transistor (HEMT) wafers is demonstrated. The fabrication of through-substrate electrodes by this technique provides a simple process that does not require lithography or other complex processes. This process is expected to be useful in the fabrication of future GaN-on-GaN devices, including very thin GaN-on-GaN HEMTs.

    DOI: 10.1002/pssa.202200739

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  54. Photoelectron beam technology for SEM imaging with pixel-specific control of irradiation beam current

    Nishitani T., Arakawa Y., Noda S., Koizumi A., Sato D., Shikano H., Iijima H., Honda Y., Amano H.

    Proceedings of SPIE - The International Society for Optical Engineering   Vol. 12496   2023

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    The scanning electron microscope (SEM) with photocathode technology was launched by retrofitting the photocathode electron gun to a commercial-based SEM system. In this SEM system, the excitation laser for photoelectron generation from the photocathode is synchronized to the scanning signal. SEM images were obtained by high-speed modulation of the photoelectron beam current using the photocathode SEM, where the location in the field of view and its irradiation current were arbitrarily selected on a pixel-by-pixel basis (Selective e-Beaming technology). As a demonstration experiment contributing to non-contact electrical inspection, low-voltage SEM imaging of MOS-FET structures in 3D-NAND flash memory was performed using this selective e-beam technology. As a result, changes in the voltage contrast of the drain electrode were observed in response to on/off selective electron beam irradiation to the gate electrode in the MOS-FET structure. As an extension of the selective electron beaming technology, a Yield Controlled e-beaming (YCeB) technology was invented to control the secondary electron yield generated in the entire field of view of the SEM image by feedback control of the laser power irradiating the photocathode to the intensity of each pixel in the SEM image. The YCeB image, in which the laser power intensity corresponding to the probe intensity is modulated so that the secondary electron yield generated in the entire field of view of the SEM image is constant, is a clearer image with less noise than the original SEM image.

    DOI: 10.1117/12.2657853

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  55. Novel Electron Beam Technology using InGaN Photocathode for High-Throughput Scanning Electron Microscope Imaging

    Sato, D; Koizumi, A; Shikano, H; Noda, S; Otsuka, Y; Yasufuku, D; Mori, K; Iijima, H; Nishitani, T; Honda, Y; Amano, H

    METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVII   Vol. 12496   2023

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Proceedings of SPIE - The International Society for Optical Engineering  

    An InGaN photocathode with a negative electron affinity (NEA) surface is suitable for industrial use because of features such as a long quantum efficiency lifetime, availability with a visible laser as an excitation light source, and the presence of a transmission-type structure. The first objective is the development of an InGaN photocathode electron gun that can be mounted on a scanning electron microscope (SEM) and the evaluation of the electron beam size at the emission point, maximum emission current, and transverse energy of the electron beam, which are important factors for realizing a high probe current in the SEM. The second objective is the evaluation of emission current stability, while the third objective is the generation of a pulsed electron beam and multi-electron beam from the InGaN photocathode. The parameters of the electron beam from the photocathode electron gun were an emission beam radius of 1 µm, transverse energy of 44 meV, and an emission current of up to 110 µA. Using a high beam current with low transverse energy from the photocathode, a 13 nA probe current with 10 nm SEM resolution was observed with 15 µA emission. At 15 µA, the continuous electron beam emission for 1300 h was confirmed; at 30 µA, the cycle time between the NEA surface reactivations was confirmed to be 90 h with 0.043% stability. Moreover, a 4.4 ns pulsed e-beam with a 4.7 mA beam current was generated, and a 5 × 5 multielectron beam with 12% uniformity was then obtained. The advantages of the InGaN photocathode, such as high electron beam current, low transverse energy, long quantum efficiency lifetime, pulsed electron beam, and multi-electron beam, are useful in industries including semiconductor device inspection tools.

    DOI: 10.1117/12.2657032

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  56. Development in AlGaN homojunction tunnel junction deep UV LEDs

    Nagata K., Anada S., Saito Y., Kushimoto M., Honda Y., Takeuchi T., Amano H.

    Proceedings of SPIE - The International Society for Optical Engineering   Vol. 12441   2023

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    To reduce the operating voltage, we analyzed the p-n junction of an aluminum gallium nitride (AlGaN) homojunction tunnel junction (TJ) deep-ultraviolet light-emitting diode using phase-shifting electron holography. We obtained a phase image reflecting the band alignment of the p-n homojunction and derived a depletion layer width of approximately 10 nm. We found the AlGaN homojunction TJ forms a p-n junction. Furthermore, the operating voltage reached 8.8 V at 63 A cm-2 by optimizing the structural characteristics of the AlGaN TJ, such as the thickness and impurity concentration, where the thickness of the TJ was 23 nm. We found that the TJ thickness should be at least the same as the depletion layer width at the AlGaN TJ.

    DOI: 10.1117/12.2646757

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  57. Demonstration of AlN-based Vertical p-n Diodes with Dopant-Free Distributed-Polarization Doping

    Kumabe T., Yoshikawa A., Kushimoto M., Honda Y., Arai M., Suda J., Amano H.

    Technical Digest - International Electron Devices Meeting, IEDM     2023

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    Nearly ideal AlN-based vertical p-n diodes are demonstrated on an AIN substrate utilizing dopant-free distributed-polarization doping (DPD). Capacitance-voltage measurements revealed that the effective doping concentration agreed well with the designed DPD charge concentration. The fabricated devices exhibited a low tum-on voltage of 6.5 V, a low differential specific ON-resistance of 3 mO cm2, and an ideality factor of 2 for a wide range of temperatures (room temperature-573 K). Moreover, the breakdown electric field was 7.3 MV/cm, which was almost twice as high as the reported critical electric field of 4H-SÌC and GaN. These results clearly demonstrate the usefulness of DPD in the fabrication of high-performance AlN-based power devices.

    DOI: 10.1109/IEDM45741.2023.10413866

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  58. Challenges and opportunities of nitride light emitting devices by HVPE thanks to a stable Mg source

    Matsumoto K., Ohnishi K., Amano H.

    Proceedings of SPIE - The International Society for Optical Engineering   Vol. 12441   2023

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    Until recently, lack of stable p-type doping source in HVPE hindered its use to the application of III-nitride light emitting devices. Recently, K. Ohnishi discovered the stable MgO source for p-type doping in GaN HVPE. This has enabled the use of HVPE for light emitting devices as well as electron devices such as vertical MOSFET. In this article, we will review the current HVPE technology of p-GaN HVPE, multi-junction AlInGaP/InGaP/GaAs solar cell, InGaN HVPE by tri-chlorides, and discuss the challenge and opportunities of III-nitride HVPE in terms of epitaxial layer design and the remaining issues of the growth of the low temperature buffer, MQWs as well as the source supply design to grow multilayer structures.

    DOI: 10.1117/12.2647336

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  59. Evaluation of Switching Characteristics of High Breakdown Voltage GaN-PSJ Transistors at Liquid Nitrogen Temperature

    Deki M., Kawarabayashi H., Honda Y., Amano H.

    AIAA Aviation and Aeronautics Forum and Exposition, AIAA AVIATION Forum 2023     2023

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    We demonstrated static characteristics testing and Double-Pulse-Testing (DPT) at 77 K using GaN-Polarization Super Junction (PSJ) transistors, commercialized GaN HEMTs and commercialized SiC-MOSFETs. In the results of SiC-MOSFETs, total switching losses increased at 77 K due to the increase in on-resistance (Ron). On the other hand, in the results of GaN-PSJ transistors, total switching losses decreased at 77 K due to the increase in channel mobilities. In the case of GaN-PSJ transistors, energy losses which are induced self-charging and discharging (Eqoss) in the upper side DUT increased at 77 K. From the measurement of Vds dependence of Cds, Cds increased at 77 K compared with room temperature conditions. However, total switching losses decreased at low temperatures because Eqoss accounts for about 10% of the switching losses.

    DOI: 10.2514/6.2023-4538

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  60. Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars Reviewed

    Sato, SI; Li, S; Greentree, AD; Deki, M; Nishimura, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Gibson, BC; Ohshima, T

    SCIENTIFIC REPORTS   Vol. 12 ( 1 ) page: 21208   2022.12

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    Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications. We manufactured praseodymium (Pr)-doped GaN nanopillars of varying size, and showed significantly enhanced room-temperature photon extraction efficiency compared to unstructured Pr-doped GaN. Implanted Pr ions in GaN show two main emission peaks at 650.3 nm and 651.8 nm which are attributed to 3P0-3F2 transition in the 4f-shell. The maximum observed enhancement ratio was 23.5 for 200 nm diameter circular pillars, which can be divided into the emitted photon extraction enhancement by a factor of 4.5 and the photon collection enhancement by a factor of 5.2. The enhancement mechanism is explained by the eigenmode resonance inside the nanopillar. Our study provides a pathway for Lanthanoid-doped GaN nano/micro-scale photon emitters and quantum technology applications.

    DOI: 10.1038/s41598-022-25522-6

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  61. Characteristics of collection and inactivation of virus in air flowing inside a winding conduit equipped with 280 nm deep UV-LEDs

    Takamure, K; Sakamoto, Y; Iwatani, Y; Amano, H; Yagi, T; Uchiyama, T

    ENVIRONMENT INTERNATIONAL   Vol. 170   page: 107580   2022.12

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    A general-purpose virus inactivation unit that can inactivate viruses was developed using deep ultraviolet (DUV) LEDs that emit DUV rays with a wavelength of 280 nm. The inside of the virus inactivation unit is a rectangular conduit with a sharp turn of 180° (sharp-turned rectangular conduit). Virus inactivation is attempted by directly irradiating the air passing through the conduit with DUV rays. The flow characteristics of air and virus particles inside the virus inactivation unit were investigated using numerical simulations. The air was locally accelerated at the sharp turn parts and flowed along the partition plate in the sharp-turned rectangular conduit. The aerosol particles moving in the sharp-turned rectangular conduit were greatly bent in orbit at the sharp turn parts, and then rapidly approached the partition plate at the lower part of the conduit. Consequently, many particles collided with the partition plates behind the sharp-turn parts. SARS-CoV-2 virus was nebulized in the virus inactivation unit, and the RNA concentration and virus inactivation rate with and without the emission of DUV-LEDs were measured in the experiment. The concentration of SARS-CoV-2 RNA was reduced to 60% through DUV-LED irradiation. In addition, SARS-CoV-2 passing through the virus inactivation unit was inactivated below the detection limit by the emission of DUV-LEDs. The virus inactivation rate and the value of the detection limit corresponded to 99.38% and 35.36 TCID50/mL, respectively.

    DOI: 10.1016/j.envint.2022.107580

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  62. Scanning electron microscope imaging by selective e-beaming using photoelectron beams from semiconductor photocathodes Reviewed

    Nishitani, T; Arakawa, Y; Noda, S; Koizumi, A; Sato, D; Shikano, H; Iijima, H; Honda, Y; Amano, H

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 40 ( 6 )   2022.12

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Journal of Vacuum Science and Technology B  

    Pulsed electron beams from a photocathode using an InGaN semiconductor have brought selectively scanning technology to scanning electron microscopes, where the electron beam irradiation intensity and area can be arbitrarily selected within the field of view in SEM images. The p-type InGaN semiconductor crystals grown in the metalorganic chemical vapor deposition equipment were used as the photocathode material for the electron beam source after the surface was activated to a negative electron affinity state in the electron gun under ultrahigh vacuum. The InGaN semiconductor photocathode produced a pulsed electron beam with a rise and fall time of 3 ns, consistent with the time structure of the irradiated pulsed laser used for the optical excitation of electrons. The InGaN photocathode-based electron gun achieved a total beam operation time of 1300 h at 15 μA beam current with a downtime rate of 4% and a current stability of 0.033% after 23 cycles of surface activation and continuous beam operation. The InGaN photocathode-based electron gun has been installed in the conventional scanning electron microscope by replacing the original field emission gun. SEM imaging was performed by selective electron beaming, in which the scanning signal of the SEM system was synchronized with the laser for photocathode excitation to irradiate arbitrary regions in the SEM image at arbitrary intensity. The accuracy of the selection of regions in the SEM image by the selective electron beam was pixel by pixel at the TV scan speed (80 ns/pix, 25 frame/s) of the SEM.

    DOI: 10.1116/6.0002111

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  63. Miniature optical fiber curvature sensor via integration with GaN optoelectronics

    Shi F., Zhang H., Ye Z., Tang X., Qin F., Yan J., Gao X., Zhu H., Wang Y., Liu Y., Amano H.

    Communications Engineering   Vol. 1 ( 1 )   2022.12

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    Optical fiber curvature sensors have been considered as a promising option for human motion detection due to its good toughness, bending flexibility and anti-electromagnetic interference. However, for wearable devices, the miniature configuration is preferred, and a high integration of the light emitter, receiver and guided fiber is essential to configure the miniaturized sensing system. Here, we present a miniaturized curvature sensing system by integrating a GaN-based optoelectronic chip with the plastical optical fiber (POF). The light emitter and detector are fabricated on a GaN-on-sapphire wafer to form a tiny chip sized at 2.5 × 1.5 mm2. The on-chip photodetector (PD) effectively senses the reflected light intensity, extracting information on the fiber bending deformation. A compact curvature sensing system is demonstrated for finger motion detection with movement angles of 30–90° and frequencies of 0.4, 1, and 1.6 Hz. The results show that the monolithically integrated LED and PD chip can be combined with the POF with reliable operation. The demonstration of the monolithically integrated optoelectronic device suggests a promising potential technology for future wearable fiber optical sensor system.

    DOI: 10.1038/s44172-022-00049-w

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  64. Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing Reviewed

    Zhang, ZY; Kushimoto, M; Yoshikawa, A; Aoto, K; Sasaoka, C; Schowalter, LJ; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 121 ( 22 )   2022.11

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    Although the pulsed operation of AlGaN-based laser diodes at UV-C wavelengths has been confirmed in the previous studies, continuous oscillation without cooling is difficult because of the high operating voltage. In this study, the temperature dependence of key parameters was investigated and their impact on achieving continuous-wave lasing was discussed. A reduction in the threshold voltage was achieved by tapering the sides of the laser diode mesa and reducing the lateral distance between the n- and p-electrodes. As a result, continuous-wave lasing at room temperature was demonstrated at a threshold current density of 4.2 kA / cm 2 and a threshold voltage of 8.7 V.

    DOI: 10.1063/5.0124480

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  65. Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes Reviewed

    Kushimoto, M; Zhang, ZY; Yoshikawa, A; Aoto, K; Honda, Y; Sasaoka, C; Schowalter, LJ; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 121 ( 22 )   2022.11

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    Previously reported UV-C laser diode (LD) structures have been subject to design constraints owing to dark line defects at the edge of the mesa stripe after device fabrication. To address this issue, a detailed analysis revealed that the dark line defects were dislocations generated by local residual shear stresses associated with mesa formation on highly strained epitaxial layers. A technique for controlling the local concentration of shear stress using a sloped mesa geometry was proposed based on insight gained by modeling the stress distribution at the edge of the mesa stripe. Experimental results showed that this technique succeeded in completely suppressing the emergence of dark-line defects. This technique will be useful in improving the performance of pseudomorphic AlGaN/AlN-based optoelectronic devices, including UV-C LDs.

    DOI: 10.1063/5.0124512

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  66. Electrical Characteristics of Thermally Stable Ag-Pd-Cu Alloy Schottky Contacts on <i>n-</i>Al<sub>0.6</sub>Ga<sub>0.4</sub>N

    Sim, KB; Kim, SK; Seong, TY; Amano, H

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 11 ( 11 )   2022.11

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    We report the fabrication of high-barrier-height and thermally reliable Schottky contacts to n-Al0.6Ga0.4N by using an Ag-Pd-Cu (APC) alloy. The Schottky barrier heights (SBHs) and ideality factors computed using the current-voltage (I-V) model ranged from 0.82 to 0.97 eV and from 3.15 to 3.44, respectively. The barrier inhomogeneity model and capacitance-voltage (C-V) method yielded higher SBHs (1.62-2.19 eV) than those obtained using the I-V model. The 300 °C-annealed APC sample exhibited more uniform electrical characteristics than the 500 °C-annealed Ni/Au Schottky samples (each with the best Schottky behavior). Furthermore, the scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) results indicated that the APC Schottky contacts were more thermally stable than the Ni/Au contacts. On the basis of the X-ray photoemission spectroscopy (XPS) results, the improved Schottky characteristics of the APC alloy contacts are described and discussed.

    DOI: 10.1149/2162-8777/aca1df

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  67. Substitutional diffusion of Mg into GaN from GaN/Mg mixture Reviewed

    Itoh, Y; Lu, S; Watanabe, H; Deki, M; Nitta, S; Honda, Y; Tanaka, A; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 11 )   2022.11

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    We evaluated Mg-diffusion into GaN from GaN/Mg mixture. The diffusion depth of Mg increased with diffusion temperature from 1100 °C to 1300 °C, whereas the Mg concentration remained constant at 2-3 × 1018 cm−3 independent of temperature. The estimated activation energy for Mg diffusion was 2.8 eV, from which the substitutional diffusion mechanism was predicted. Mg-diffused GaN samples showed p-type conductivity with a maximum hole mobility of 27.7 cm2 V−1 s−1, suggesting that substitutional diffusion contributes to Mg activation. This diffusion technique can be used to easily form p-type GaN and has potential as a p-type selective doping technique.

    DOI: 10.35848/1882-0786/ac9c83

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  68. Adsorption structure deteriorating negative electron affinity under the H<sub>2</sub>O environment Reviewed

    Kashima, M; Ishiyama, S; Sato, D; Koizumi, A; Iijima, H; Nishitani, T; Honda, Y; Amano, H; Meguro, T

    APPLIED PHYSICS LETTERS   Vol. 121 ( 18 )   2022.10

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    Photocathodes with negative electron affinity (NEA) characteristics have various advantages, such as small energy spread, high spin polarization, and ultrashort pulsing. Nitride semiconductors, such as GaN and InGaN, are promising materials for NEA photocathodes because their lifetimes are longer than those of other materials. In order to further prolong the lifetime, it is important to better understand the deterioration of NEA characteristics. The adsorption of residual gases and back-bombardment by ionized residual gases shorten the lifetime. Among the adsorbed residual gases, H2O has a significant influence. However, the adsorption structures produced by the reaction with H2O are not comprehensively studied so far. In this study, we investigated adsorption structures that deteriorated the NEA characteristics by exposing InGaN and GaAs to an H2O environment and discussed the differences in their lifetimes. By comparing the temperature-programmed desorption curves with and without H2O exposure, the generation of CsOH was confirmed. The desorption of CsOH demonstrated different photoemission behaviors between InGaN and GaAs results. InGaN recovered its NEA characteristics, whereas GaAs did not. Considering the Cs desorption spectra, it is difficult for an NEA surface on InGaN to change chemically, whereas that for GaAs changes easily. The chemical reactivity of the NEA surface is different for InGaN and GaAs, which contributes to the duration of photoemission. We have attempted to prolong the lifetime of InGaN by recovering its NEA characteristics. We found that InGaN with NEA characteristics can be reused easily without thermal treatment at high temperatures.

    DOI: 10.1063/5.0125344

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  69. Monolithic GaN optoelectronic system on a Si substrate Reviewed

    Zhang, H; Yan, JB; Ye, ZQ; Shi, F; Piao, JL; Wang, W; Gao, XM; Zhu, HB; Wang, YJ; Liu, YH; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 121 ( 18 )   2022.10

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    GaN-based devices have grown rapidly in recent decades, due to their important research value and application prospects. There is a desire to monolithically integrate different GaN devices into a single chip for the development of future optoelectronic systems with low power consumption. In addition to improved multifunctional performance, a miniature integrated system can result in a significant reduction in material costs, processing costs, and packaging costs. In view of such prospects, we propose monolithic, top-down approaches to build III-nitride transmitter, modulator, waveguide, beam splitter, receiver, and monitor as a single unit onto a conventional GaN-on-silicon wafer without involving regrowth or postgrowth doping. Data communication among these components is realized through light propagation, opening up horizons for GaN optoelectronic systems on a chip.

    DOI: 10.1063/5.0125324

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  70. The photoemission characteristics of a NEA InGaN photocathode by simultaneously supplying Cs and O2 Reviewed

    Kashima, M; Itokawa, Y; Kanai, T; Sato, D; Koizumi, A; Iijima, H; Nishitani, T; Honda, Y; Amano, H; Meguro, T

    APPLIED SURFACE SCIENCE   Vol. 599   2022.10

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Applied Surface Science  

    A high quantum efficiency (QE) can be obtained on negative electron affinity (NEA) surfaces. It is well-known that NEA surfaces can be formed on semiconductor materials such as GaAs by the alternating supply of cesium (Cs) and oxygen (O2), which is called the yo-yo method. While GaN and related compounds such as InGaN are expected to realize an NEA photocathode with a long lifetime, the surface reactions between GaAs and nitride semiconductors are completely different with respect to the increasing rate of QE induced by the supply of O2. In addition, the surface processes of photoemission from NEA nitride semiconductors have not yet been elucidated. In the present study, a higher QE was achieved in InGaN by simultaneously supplying Cs and O2 instead of using the conventional yo-yo method. The possible Cs adsorption states in relation to the photoemission are also discussed based on the QE tendencies and the temperature programmed desorption (TPD) spectra of the NEA surfaces formed under elevated temperature conditions. This study suggests that the Cs oxide species, which is one of the key compounds for imparting the NEA nature, decomposes at approximately 350 °C and that the InGaN-Cs2O2 structure is a possible candidate for NEA photocathodes.

    DOI: 10.1016/j.apsusc.2022.153882

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  71. High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN Reviewed

    Schimmel, S; Salamon, M; Tomida, D; Neumeier, S; Ishiguro, T; Honda, Y; Chichibu, SF; Amano, H

    MATERIALS   Vol. 15 ( 17 )   2022.9

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    For the fundamental understanding and the technological development of the ammonothermal method for the synthesis and crystal growth of nitrides, an in situ monitoring technique for tracking mass transport of the nitride throughout the entire autoclave volume is desirable. The feasibility of using high-energy computed tomography for this purpose was therefore evaluated using ex situ measurements. Acceleration voltages of 600 kV were estimated to yield suitable transparency in a lab-scale ammonothermal setup for GaN crystal growth designed for up to 300 MPa operating pressure. The total scan duration was estimated to be in the order of 20 to 40 min, which was sufficient given the comparatively slow crystal growth speed in ammonothermal growth. Even shorter scan durations or, alternatively, lower acceleration voltages for improved contrast or reduced X-ray shielding requirements, were estimated to be feasible in the case of ammonoacidic growth, as the lower pressure requirements for this process variant allow for thinned autoclave walls in an adapted setup designed for improved X-ray transparency. Promising nickel-base and cobalt-base alloys for applications in ammonothermal reactors with reduced X-ray absorption in relation to the maximum operating pressure were identified. The applicability for the validation of numerical simulations of the growth process of GaN, in addition to the applicability of the technique to further nitride materials, as well as larger reactors and bulk crystals, were evaluated.

    DOI: 10.3390/ma15176165

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  72. Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal-organic vapor phase epitaxy Reviewed

    Hu, N; Avit, G; Pristovsek, M; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 121 ( 8 )   2022.8

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    We studied indium incorporation into InGaN/GaN quantum wells grown by metal-organic vapor phase epitaxy by systematically varying of gallium and indium precursor flows on (0001), (10 1 ¯3), (11 2 ¯2), and (10 1 ¯0) orientations. The layer thickness and indium composition obtained from x-ray diffraction analysis were correlated with a model based on indium and gallium incorporation efficiencies. In the model, the indium incorporation efficiency is reproduced by the Langmuir surface coverage of gallium, indicating that indium atoms close to gallium atoms can be incorporated preferably.

    DOI: 10.1063/5.0088908

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  73. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates Reviewed

    Ohnishi, K; Fujimoto, N; Nitta, S; Watanabe, H; Honda, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   Vol. 592   2022.8

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Journal of Crystal Growth  

    The effects of halide vapor phase epitaxial (HVPE) growth conditions such as input V/III ratio and substrate off-cut angle on the surface morphology of n-type GaN layers grown on GaN (0001) freestanding substrates were investigated to develop a model for growing smooth surfaces. The spiral hillock density increased with increasing input V/III ratio and/or decreasing off-cut angle. The critical off-cut angle between the spiral growth and the step-flow growth depended on the vapor supersaturation calculated by thermodynamic analysis. To understand the transition of the growth mode, we proposed a Burton–Cabrera–Frank-theory-based model considering the effect of spiral growth, which was utilized to explain the obtained experimental results. The developed growth model can be effective for predicting the HVPE growth mode between the spiral growth and the step-flow growth.

    DOI: 10.1016/j.jcrysgro.2022.126749

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  74. Improved performance of deep ultraviolet AlGaN-based light-emitting diode by reducing contact resistance of Al-based reflector Reviewed

    Sim K.B., Jin J.Y., Kim S.K., Ko Y.J., Hwang G.W., Seong T.Y., Amano H.

    Journal of Alloys and Compounds   Vol. 910   2022.7

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    In this study, chlorine (Cl) treatment was carried out on p-AlGaN to enhance the performance of ultraviolet-C light emitting diodes (UVC LEDs) by modifying ITO work function and hence reducing the contact resistance of ITO/Al reflector. The Cl-treated UVC LEDs exhibit the forward voltage of 6.88 V at 20 mA, whereas the reference samples show 7.50 V. The light output power and relative wall plug efficiency (WPE) of the Cl-treated UVC LEDs are enhanced by 17.1% at 500 mW and 19.5% at 100 mA, respectively, as compared to the reference. Additionally, the Cl-treated LEDs also display reduction in both the leakage current and ideality factor. Further, the photoluminescence (PL) intensity of AlGaN micro-disks is also enhanced by the Cl-treatment. X-ray photoemission spectroscopy (XPS) results indicate the formation of Cl-ITO at the ITO/p-AlGaN interface and the passivation of the surface states of AlGaN by Cl radicals. Based on the XPS results, a possible mechanism for the improved performance of Cl-treated UVC AlGaN-based LEDs is described and discussed.

    DOI: 10.1016/j.jallcom.2022.164895

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  75. Weak metastability of Al<i> <sub>x</sub> </i>Ga<sub>1-<i>x</i> </sub>N (<i>x</i>=13/24, 15/24, 17/24) shown by analyzing AlGaN grown on AlN with dense macrosteps Reviewed

    Hirano, A; Nagasawa, Y; Ippommatsu, M; Sako, H; Hashimoto, A; Sugie, R; Honda, Y; Amano, H; Kojima, K; Chichibu, SF

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 7 )   2022.7

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    Energy-dispersive X-ray signals calibrated by Rutherford backscattering indicated the generation of Al13/24Ga11/24N in Ga-rich stripes in a nonflat Al0.58Ga0.42N layer. Also, the CL peak wavelengths of ∼259 and 272 nm also showed the generation of Al15/24Ga9/24N and Al13/24Ga11/24N in Al-rich zones and Ga-rich stripes, respectively. The wavelength of a strong CL peak at ∼246 nm, which was observed from the Al0.7Ga0.3N layer in our previous study, is also considered to correspond to the near-band-emission wavelengths of Al17/24Ga7/24N. In particular, the stronger reproducibility of metastable Al15/24Ga9/24N generation was confirmed, in agreement with the computed predictions by other research groups.

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  76. Space-Charge Profiles and Carrier Transport Properties in Dopant-Free GaN-Based p-n Junction Formed by Distributed Polarization Doping Reviewed

    Kumabe, T; Kawasaki, S; Watanabe, H; Nitta, S; Honda, Y; Amano, H

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 16 ( 7 )   2022.7

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    Herein, the operation of dopant-free GaN-based p-n junctions formed by distributed polarization doping (DPD) is experimentally demonstrated and their space charge profiles and carrier transport properties are investigated. The device exhibits ideal space charge profiles explained by polarization effects and demonstrates the excellent controllability of DPD. In addition, it shows rectification and electroluminescence under forward-biased conditions. The carrier transport properties could be explained by the conventional recombination/diffusion model used for impurity-doped p-n junctions. Repeatable breakdowns are also observed in all devices and the temperature-dependent breakdown voltages reveal that the breakdowns are caused by avalanche multiplication, which is also the same as those reported in impurity-doped GaN p-n diodes. These results indicate that DPD is a promising doping technology for GaN-based power devices overcoming any issues associated with conventional impurity doping.

    DOI: 10.1002/pssr.202200127

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  77. Dual-peak electroluminescence spectra generated from Al <i><sub>n</sub></i> <sub>/12</sub>Ga<sub>1-<i>n</i>/12</sub>N (<i>n</i>=2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells Reviewed

    Nagasawa, Y; Kojima, K; Hirano, A; Ippommatsu, M; Honda, Y; Amano, H; Chichibu, SF

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 55 ( 25 )   2022.6

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    The metastability of Al n/12Ga1-n/12N (n = 2, 3, and 4) was investigated by the statistical analysis of electroluminescence (EL) spectra having dual peaks with a peak-to-peak distance (pp) of >10 nm generated from nonflat Al x Ga1-x N (x ∼0.2) quantum wells (QWs) fabricated on c(0001) sapphire substrates with a miscut of 1.0° towards the m[1 1ˉ 00] axis. To explain the origins of the dual-peak EL (DPEL) spectra, which are often observed for AlGaN-QWs with Ga content of greater than 0.7, a nonflat QW model incorporating two metastable compositions, Al(n-1)/12Ga1-(n-1)/12N and Al n/12Ga1-n/12N (n: integer), is proposed. By the statistical analysis of peak wavelengths in DPEL spectra and the verification of EL spectral shapes, two series of featured EL peak wavelengths with intervals of 2-3 nm were obtained from five out of six LED wafers. The two series of featured EL peak wavelengths were assigned by comparison with the calculated EL wavelengths. Then, Al2/12Ga10/12N and Al3/12Ga9/12N were determined to be the origins of peaks with the longer and shorter wavelengths in the DPEL, respectively, in addition to the metastable Al n/12Ga1-n/12N (n= 4-9) compositions observed in our previous studies. When DPEL (pp> 10 nm) appeared, the difference in QW thickness between Al2/12Ga10/12N and Al3/12Ga9/12N tended to be larger than one monolayer (ML), indicating a significant amount of Ga or GaN mass transport. Furthermore, the Al2/12Ga10/12N and Al3/12Ga9/12N QWs are considered to have thicknesses of m ML (m: consecutive integers), suggesting the 1 ML configuration of Al and Ga atoms on the c(0001) plane. In addition, the DPEL obtained from nonflat Al x Ga1-x N (x ∼0.25) QWs by another research group was shown to be related to two metastable Al n/12Ga1-n/12N (n = 3, 4), similarly to our one exceptional LED wafer, which also agreed with the model proposed in this work.

    DOI: 10.1088/1361-6463/ac5d03

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  78. Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors.

    Tanaka A, Sugiura R, Kawaguchi D, Wani Y, Watanabe H, Sena H, Ando Y, Honda Y, Igasaki Y, Wakejima A, Ando Y, Amano H

    Scientific reports   Vol. 12 ( 1 ) page: 8175   2022.5

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    DOI: 10.1038/s41598-022-12628-0

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  79. Interplay of sidewall damage and light extraction efficiency of micro-LEDs Reviewed

    Park, JH; Pristovsek, M; Cai, WT; Cheong, H; Kumabe, T; Lee, DS; Seong, TY; Amano, H

    OPTICS LETTERS   Vol. 47 ( 9 ) page: 2250 - 2253   2022.5

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    This Letter describes the impact of shape on micro light-emitting diodes (µLEDs), analyzing 400 µm2 area µLEDs with various mesa shapes (circular, square, and stripes). Appropriate external quantum efficiency (EQE) can yield internal quantum efficiency (IQE) which decreases with increasing peripheral length of the mesas. However, light extraction efficiency (ηe) increased with increasing mesa periphery. We introduce analysis of Jpeak (the current at peak EQE) since it is proportional to the non-radiative recombination. Etching the sidewalls using tetramethylammonium hydroxide (TMAH) increased the peak EQE and decreased the sidewall dependency of Jpeak. Quantitatively, the TMAH etching reduced non-radiative surface recombination by a factor of four. Hence, shrinking µLEDs needs an understanding of the relationship between non-radiative recombination and ηe, where analyzing Jpeak can offer new insights.

    DOI: 10.1364/OL.456993

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  80. <p>The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer</p> Reviewed

    Park Jeong-Hwan, Cai Wentao, Cheong Heajeong, Ushida Yasuhisa, Lee Da-Hoon, Ando Yuto, Furusawa Yuta, Honda Yoshio, Lee Dong-Seon, Seong Tae-Yeon, Amano Hiroshi

    JOURNAL OF APPLIED PHYSICS   Vol. 131 ( 15 )   2022.4

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    As the size of micro light-emitting diodes (μLEDs) decreases, μLEDs encounter etching damage especially at the sidewalls that critically affects their properties. In this study, we investigated the influence of etching bias power (Pbias) on the performance of μLEDs and found that the current-voltage and light output-current characteristics of μLEDs were enhanced when Pbias was reduced. It was shown that at low Pbias, the chemical reaction between etching gas and gallium nitride, rather than ion sputtering, dominated the etching process, leading to low plasma damage and rough surface morphology. Additionally, to understand the etching-induced surface roughening behaviors, various substrates with different threading dislocation densities were treated at low Pbias. It was found that for the sample (with p-contact size of 10 × 10 μm2), the efficiency droop was approximately 20%, although the current reached 10 mA due most probably to the suppressed polarization effect in the quantum well. It was further observed that the external quantum efficiency (EQE) was dependent on Pbias, where the lowest Pbias yielded the highest maximum EQE, indicating that the plasma damage was mitigated by reducing Pbias. Optimization of dry etching and polarization-suppression conditions could pave the way for realizing high-performance and brightness μLEDs for next-generation displays.

    DOI: 10.1063/5.0085384

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  81. "Regrowth-free" fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration Reviewed

    Kumabe, T; Watanabe, H; Ando, Y; Tanaka, A; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 4 )   2022.4

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    An AlGaN/GaN heterojunction bipolar transistor (HBT) with N-p-n configuration was fabricated by the "regrowth-free"method, resulting in a contamination-free emitter-base AlGaN/GaN heterojunction. The low-bias-power-based low-damage inductively coupled plasma-reactive ion etching was employed in this study for emitter mesa definition instead of the conventional selective-area-regrowth technique. The method successfully minimized the etching-induced damage in the p-GaN base layer and the contamination at the emitter-base AlGaN/GaN heterojunction. Consequently, the fabricated device exhibited a high current gain of 25, the highest current density of 15.0 kA cm-2, and the lowest on-state voltage offset of 0.75 V ever reported for AlGaN/GaN HBTs.

    DOI: 10.35848/1882-0786/ac6197

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  82. Mechanism and enhancement of anti-parasitic-reaction catalytic activity of tungsten-carbide-coated graphite components for the growth of bulk GaN crystals Reviewed

    Nakamura, D; Iida, K; Horibuchi, K; Aoki, Y; Takahashi, N; Mori, Y; Moriyama, M; Nitta, S; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 4 )   2022.4

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    The working mechanism of the anti-parasitic-reaction (APR) catalyst of tungsten carbide (WC) coating on graphite in hydride vapor phase epitaxy GaN growth were examined. During NH3 annealing, the surface of WC is reduced as well as nitrided. The W2N topmost layer was found to work as an APR-active catalyst to suppress the formation of GaN polycrystals during high-rate HVPE-GaN growth, while the regions covered with thick pyrolytic graphite residues were catalytically inert. The formation of an additional W2C top layer on the WC underlayer was demonstrated to exhibit superior APR activity, i.e. complete suppression of GaN polycrystal formation.

    DOI: 10.35848/1882-0786/ac5ba4

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  83. Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED Reviewed

    Matsubara, T; Nagatat, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 4 )   2022.4

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    In this study, we enhanced the emission power of AlGaN-based tunnel junction deep-ultraviolet LEDs (TJ LEDs) by using a MgZnO and aluminum stacked structure as UV reflective electrodes on the anode side. The emission wavelength of the fabricated TJ LED was 284 nm, and the emission power was 57.3 mW at 63 A cm-2. The polycrystalline MgZnO enabled both conductivity and UV transmittance to be achieved, approximately doubling with a reflectance of the fabricated TJ LED at 284 nm compared to conventional TJ LED with Ti/Al. These factors contributed to the increased emission power of TJ LEDs.

    DOI: 10.35848/1882-0786/ac5acf

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  84. Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode Reviewed

    Nagata K., Anada S., Miwa H., Matsui S., Boyama S., Saito Y., Kushimoto M., Honda Y., Takeuchi T., Amano H.

    Applied Physics Express   Vol. 15 ( 4 )   2022.4

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    We demonstrated the structural optimization of AlGaN tunnel junction (TJ) deep-ultraviolet light-emitting diodes by changing the thickness and impurity concentrations of p+-type and n+-type AlGaN constituting the TJ. By decreasing the total thickness of the TJ to 23 nm, the operating voltage reached a minimum of 8.8 V at 63 A cm-2. Further decrease in TJ thickness markedly increases the operating voltage. This finding implies that the depletion layer width becomes greater than the TJ thickness if it is smaller than 12 nm. Therefore, we conclude that the TJ thickness must be greater than the depletion layer width.

    DOI: 10.35848/1882-0786/ac60c7

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  85. Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process Reviewed

    Liao Y., Chen T., Wang J., Cai W., Ando Y., Yang X., Watanabe H., Tanaka A., Nitta S., Honda Y., Chen K.J., Amano H.

    Applied Physics Letters   Vol. 120 ( 12 )   2022.3

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    In this work, a deliberate etching-based top-down approach is proposed to fabricate the GaN nanorod (NR) Schottky barrier diode (SBD). As a key step during the fabrication, the impact of the wet-etching process on device performance is systematically studied. By virtue of the reduced surface states at the sidewall, the performance of NR SBD with the wet-etching process is substantially improved, delivering a forward turn-on voltage of 0.65 V, a current density of ∼10 kA/cm2 at 3 V, an ideality factor of 1.03, an ON/OFF current ratio of ∼1010, and no severe current collapse, along with a reverse breakdown voltage of 772 V.

    DOI: 10.1063/5.0083194

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  86. Inhomogeneous Barrier Height Characteristics of <i>n</i>-Type AlInP for Red AlGaInP-Based Light-Emitting Diodes Reviewed

    Cha, JS; Lee, DH; Sim, KB; Lee, TJ; Seong, TY; Amano, H

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 11 ( 3 )   2022.3

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    For micro-light-emitting diode (LED)-based display applications, such as virtual reality and augmented reality, high-performance Ohmic contacts (namely, the improvement of current injection efficiency) is vital to the realization of high-efficiency micro-LEDs. The surface Fermi level pinning characteristics could be comprehended in terms of the relation between work function of metals (M) and Schottky barrier height (SBH, B). In this study, we have investigated the surface Fermi level pinning characteristics of (001) n-AlInP surfaces by employing Schottky diodes with different metals. With an increase in the temperature, B increases linearly and ideality factors (n) decreases. This behavior is related to the barrier height inhomogeneity. Inhomogeneity-modelbased B is evaluated to be in the range of 0.86 1.30 eV, which is dependent on the metal work functions and are similar to those measured from capacitance-voltage relation. Further, The S-parameter, the relation between B and M (d B/d M), is 0.36. This is indicative of the partial pinning of the surface Fermi level at the surface states placed at 0.95 eV below the conduction band. Furthermore, it is also shown that (NH4)2S-passivation results in an increases the mean SBH and the S-parameter (e.g., 0.52).

    DOI: 10.1149/2162-8777/ac5d66

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  87. Visualization of depletion layer in AlGaN homojunction p-n junction Reviewed

    Nagata, K; Anada, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Yamamoto, K; Hirayama, T; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 3 )   2022.3

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    We analyzed the p-n junction of an aluminum gallium nitride (AlGaN) homojunction tunnel junction (TJ) deep-ultraviolet light-emitting diode by phase-shifting electron holography. We clearly obtained a phase image reflecting the band alinement of the p-n homojunction and derived a depletion layer width of approximately 10 nm. In addition, the observed depletion layer width for the AlGaN TJ was in good agreement with the simulated one reflecting the diffusion profile of Mg and Si, thus enabling a discussion on the electrical conduction mechanism for an AlGaN p-n junction.

    DOI: 10.35848/1882-0786/ac53e2

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  88. Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN Reviewed

    Itoh, Y; Watanabe, H; Ando, Y; Kano, E; Deki, M; Nitta, S; Honda, Y; Tanaka, A; Ikarashi, N; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 2 )   2022.2

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    We evaluated the beam current dependence of defect formation during Mg ion implantation into GaN at a high temperature of 1100 °C with two beam currents. Photoluminescence spectra suggest that low-beam-current implantation reduced the vacancy concentration and activated Mg to a greater extent. Moreover, scanning transmission electron microscopy analysis showed that low-beam-current implantation reduced the density of Mg segregation defects with inactive Mg and increased the density of intrinsic dislocation loops, suggesting decreases in the densities of Ga and N vacancies. The formation of these defects depended on beam current, which is an important parameter for defect suppression.

    DOI: 10.35848/1882-0786/ac481b

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  89. Defect characterization of { 10 1 ¯ 3 } GaN by electron microscopy Reviewed

    Kusch G., Frentrup M., Hu N., Amano H., Oliver R.A., Pristovsek M.

    Journal of Applied Physics   Vol. 131 ( 3 )   2022.1

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    Advances in obtaining untwinned (10 1 ¯3)-oriented semi-polar GaN enable a new crystal orientation for the growth of green and red LED structures. We present a scanning electron microscopy study that combines the structural characterization of electron channeling contrast imaging with the optical characterization of cathodoluminescence hyperspectral imaging on a (10 1 ¯ 3) GaN layer. An extensive defect analysis revealed that the dominant defects consist of basal plane stacking faults (BSFs), prismatic stacking faults, partial dislocations, and threading dislocations. With a defect density of about an order of magnitude lower than in comparable. The optical properties of the defects have been characterized from 10 to 320 K, showing BSF luminescence at room temperature indicating a reduced density of non-radiative recombination centers in the as-grown samples compared to established semi- and non-polar orientations. Our findings suggest that growth along (10 1 ¯3) has the potential for higher radiative efficiency than established semi-polar orientations.

    DOI: 10.1063/5.0077084

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  90. Perspective on thermal conductance across heterogeneously integrated interfaces for wide and ultrawide bandgap electronics Reviewed

    Cheng, Z; Graham, S; Amano, H; Cahill, DG

    APPLIED PHYSICS LETTERS   Vol. 120 ( 3 )   2022.1

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    Heterogeneous integration is important to create multi-functionality in future electronic devices. However, few thermal studies of the interfaces formed in these integrated devices have been reported before. Recently, integrated interfaces by surface-Activated bonding were found to have high thermal boundary conductance, which provides a solution for heat dissipation of GaN and β-Ga2O3-based power electronics. Here, we review the recent progress on the interfacial thermal transport across heterogeneously integrated interfaces, including transferred van der Waals force bonded interfaces, surface-Activated bonded interfaces, plasma bonded interfaces, and hydrophilic bonded interfaces. This Perspective specifically focuses on applications of thermal management strategies of electronics, especially power electronics. Finally, the challenges, such as high-Throughput thermal measurements of buried interfaces, thermal property-structure relations of interfaces bonded under different conditions, theoretical understanding of interfacial thermal transport, and device demonstrations, are pointed out.

    DOI: 10.1063/5.0077039

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  91. Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate Reviewed

    Kushimoto, M; Zhang, ZY; Honda, Y; Schowalter, LJ; Sasaoka, C; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( 1 )   2022.1

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    The presence of hexagonal-pyramid-shaped hillocks (HPHs) in AlGaN epitaxial films affects device characteristics; this effect is significant in DUV laser diodes (LDs) on AlN substrates, where the presence of HPHs under the p-electrode increases the threshold current density and inhibits the lasing. In this study, we investigated the difference between the lasing characteristics of LDs with and without HPHs. It was found that in the presence of HPHs, the threshold excitation power density increased and the slope efficiency decreased by optical excitation. To investigate the cause of these phenomena, we performed structural, optical, and electrical analyses of the HPHs. Various imaging techniques were used to directly capture the characteristics of the HPHs. As a result, we concluded that HPHs cause the degradation of LD characteristics due to a combination of structural, optical, and electrical factors.

    DOI: 10.35848/1347-4065/ac3a1d

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  92. Ohmic Contact to <i>p</i>-Type GaN Enabled by Post-Growth Diffusion of Magnesium Reviewed

    Wang, J; Lu, S; Cai, WT; Kumabe, T; Ando, Y; Liao, YQ; Honda, Y; Xie, YH; Amano, H

    IEEE ELECTRON DEVICE LETTERS   Vol. 43 ( 1 ) page: 150 - 153   2022.1

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    We demonstrated the formation of excellent Ohmic contact to p-type GaN (including the plasma etching-damaged p-type GaN which otherwise exhibited undetectable current within ±5 V) by the post-growth diffusion of magnesium. The specific contact resistivity on the order of 10-4Omega cm2 (extracted at V=0 V) was achieved on the plasma-damaged p-GaN with linear current-voltage characteristics by the transfer length method (TLM) measurement. The improvement in current by a factor of over 109 was also obtained on the plasma-damaged p-n junction diode after the same Mg-treatment. These experimental results indicate a great potential of post-growth diffusion of Mg to overcome the bottleneck of forming a good Ohmic contact to p-GaN.

    DOI: 10.1109/LED.2021.3131057

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  93. Frontier electronics in memory of Professor Isamu Akasaki Invited

    Amano, H

    GALLIUM NITRIDE MATERIALS AND DEVICES XVII   Vol. 12001   2022

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    ISAMU AKASAKI, crystal grower, a pioneer of GaN-based blue light-emitting diodes (LEDs), and a Nobel Laureate in Physics, passed away because of pneumonia on April 1, 2021 at the age of 92. According to the Nobel Foundation, the LED lamp holds considerable promise for improving the quality of life of over 1.5 billion people worldwide who lack access to electricity grids. Owing to its low power requirements, it can be powered by cheap local solar energy. In this article, his pursuit of blue LEDs for 20 years is described.

    DOI: 10.1117/12.2619005

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  94. An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources Reviewed

    Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B

    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 10   page: 797 - 807   2022

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    In this paper, a technique to develop small signal circuit (SSC) models of AlGaN/GaN high electron mobility transistors (HEMTs) using dependent current sources is presented. In this technique, experimentally measured broadband Y-parameters of AlGaN/GaN HEMTs are mathematically modeled as a sum of pole-residue terms. By representing each pole-residue term as a dependent current source, it is possible to develop an accurate SSC models for HEMTs which otherwise may not be possible using passive resistive-inductive-capacitive elements. The accuracy of the proposed SSC model is validated against the conventional SSC model using a 2nd, 3rd and 4th order rational function representation of the admittance branches of AlGaN/GaN HEMTs. Therefore, the proposed SSC model turns out to be highly robust in nature and can take care of any form of the transfer functions of the admittance branches between the gate, drain, and source terminal of an AlGaN/GaN HEMT.

    DOI: 10.1109/JEDS.2022.3208028

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  95. Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems

    Otoki Y., Shibata M., Mishima T., Ohta H., Mori Y., Imanishi M., Tamura S., Kidera K., Takino J., Okayama Y., Watanabe K., Okamoto N., Honda Y., Yamamoto M., Shiozaki K., Amano H.

    2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022     page: 237 - 242   2022

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022  

    Exciting high performance power electronic devices have been widely demonstrated and manufactured using GaN epitaxial layers, but the majority of these devices have been fabricated on lattice mismatched substrates, including SiC, Si, or sapphire. Unfortunately, using lattice mismatched substrates inevitably introduces high concentrations of point defects and dislocations into the GaN epilayers, and these defects degrade the electrical performance of the fabricated GaN devices. Also, the mismatch of lattice constant and coefficient of thermal expansion cause strain and wafer bowing in the GaN epi, which further degrade the quality material for device fabrication. Using lattice matched GaN substrates provides solutions to these problems. In 2014, the Ministry of the Environment launched a national project to develop the required technology and to prove the superiority of GaN on GaN devices in real systems, with more than 10 partnerships from academia and industry. The project included work in several areas, including GaN substrate growth, GaN epitaxy, material characterization, and fabrication of devices and ICs for application in various systems. Large area GaN substrates have been grown with low defect densities, which has enabled fabrication of new types of vertical and horizontal GaN devices. The GaN devices have been used in servers, solar cell power conditioners, microwave ICs, distribution transformers, electric vehicle power converters. The performance improvements were compared with conventional approaches in each case. An “ALL GaN vehicle” has also been demonstrated, in which GaN devices are used in all power components. In this talk, we will present these results which show the great potential of GaN on GaN devices in the industry.

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  96. Development of Desktop Air Curtain System to Block Aerosols in Exhaled Breath

    TAKAMURE Kotaro, SAKAMOTO Yasuaki, YAGI Tetsuya, IWATANI Yasumasa, AMANO Hiroshi, UCHIYAMA Tomomi

    The Proceedings of Mechanical Engineering Congress, Japan   Vol. 2022 ( 0 ) page: S055-10   2022

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    <p>A desktop-type air curtain device capable of being installed on a desk to protect healthcare workers from infectious diseases was developed. Pseudo-exhaled air containing aerosol particles emitted from a mannequin was blown toward the air curtain generated by the air curtain device. The aerosol blocking effect of the air curtain device was investigated using particle image velocimetry measurements. Air curtain flow was maintained inside the gate of the air curtain device. The aerosol particles approaching the air curtain device were observed to abruptly bend towards the suction port without passing through the gate, signifying that the aerosol particles were blocked by the air curtain flow.</p>

    DOI: 10.1299/jsmemecj.2022.s055-10

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  97. Collection and Inactivation Abilities of Virus Flowing in a Return Air Channel with a DUV- LED

    TAKAMURE Kotaro, IWATANI Yasumasa, SAKAMOTO Yasuaki, YAGI Tetsuya, AMANO Hiroshi, UCHIYAMA Tomomi

    The Proceedings of Mechanical Engineering Congress, Japan   Vol. 2022 ( 0 ) page: S055-11   2022

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    <p>A virus inactivation unit that can inactivate viruses was developed using deep ultraviolet (DUV) LEDs that emit DUV rays with a wavelength of 280 nm. The flow characteristics of virus particles inside the virus inactivation unit were investigated using numerical simulations. The percentage of particles colliding on the inner wall of the virus inactivation unit is 56 %. Especially, many particles collide with the partition plates behind the sharp-turn parts.</p>

    DOI: 10.1299/jsmemecj.2022.s055-11

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  98. Blocking and collecting effect of aerosol particles by desktop air curtain system

    TAKAMURE Kotaro, KOBAYASHI Daisuke, MUTO Hiromasa, HARUKI Taketo, AMANO Hiroshi, YAGI Tetsuya, IWATANI Yasumasa, UCHIYAMA Tomomi

    The Proceedings of the Fluids engineering conference   Vol. 2022 ( 0 ) page: OS03-22   2022

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    DOI: 10.1299/jsmefed.2022.os03-22

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  99. Uniting a III-Nitride Transmitter, Waveguide, Modulator, and Receiver on a Single Chip Reviewed

    Xie, MY; Jiang, Y; Gao, XM; Cai, W; Yuan, JL; Zhu, HB; Wang, YJ; Zeng, XF; Zhang, ZY; Liu, YH; Amano, H

    ADVANCED ENGINEERING MATERIALS   Vol. 23 ( 12 )   2021.12

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    The integration of III-nitride electronics and photonics is of great interest toward future computing systems with low power consumption. Multifunctioning multiple quantum well (MQW) diodes can address the challenging issue for on-chip integration of a light source, which is a key component to drive the photonic circuits. Herein, a transmitter, waveguide, modulator, and receiver are monolithically integrated on a III-nitride-on-silicon platform to perform light emission, transmission, modulation, and detection simultaneously. Both the receiver and modulator exhibit sufficient sensitivity to optical signals from the transmitter, which has an identical InGaN/AlGaN multiple quantum well (MQW) structure because the III-nitride diode provides spectral overlap between the emission and absorption spectra. On-chip data communication among these optical components is achieved using light, and the effective wavelength range is from 365 to 385 nm, in which multifunctional devices can be operated.

    DOI: 10.1002/adem.202100582

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  100. Discrete wavelengths observed in electroluminescence originating from Al<inf>1/2</inf>Ga<inf>1/2</inf>N and Al<inf>1/3</inf>Ga<inf>2/3</inf>N created in nonflat AlGaN quantum wells Reviewed

    Nagasawa Y., Kojima K., Hirano A., Sako H., Hashimoto A., Sugie R., Ippommatsu M., Honda Y., Amano H., Chichibu S.F.

    Journal of Physics D: Applied Physics   Vol. 54 ( 48 )   2021.12

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    When nonflat Al x Ga1-x N quantum wells (QWs) for producing 285 nm light emitting diodes (LEDs) were fabricated on n-AlGaN on AlN templates with dense macrosteps on c(0001) sapphire substrates with a 1.0 miscut relative to the m[1-100] axis, composite electroluminescence (EL) spectra from both inclined and terrace zones in Al x Ga1-x N QWs (x∼ 1/3) were generated owing to compositional and thickness modulations. The shoulder or main peaks in composite EL spectra tended to locate at fixed discrete wavelengths of ∼287, ∼292, and ∼296 nm from 12 nonuniform 285 nm LED wafers that were involved in nonnegligible run-to-run drift, even though these wafers were fabricated using the same source gas flow parameters for metal-organic vapor phase epitaxy. The discrete wavelengths of ∼287, ∼292, and ∼296 nm were attributed to EL from Al1/3Ga2/3N QWs with thicknesses of 8, 9, and 10 monolayers (ML), respectively, by referring to the results of cathodoluminescence (CL) analysis. Also, when nonflat Al x Ga1-x N QWs (x∼ 1/2) for 265 nm LEDs were grown, single-peak-like EL spectra were mainly generated from the inclined zones in nonflat QWs. The EL spectra taken from four nonuniform 265 nm LED wafers tended to show weak structures or main peaks at ∼257, ∼261, ∼266, and ∼271 nm, which were also attributed to emissions from Al1/2Ga1/2N QWs with thicknesses of 5, 6, 7, and 8 ML, respectively, by referring to CL analysis results. The creation of Al1/3Ga2/3N and Al1/2Ga1/2N in nonflat QWs in this work was in agreement with the results of our previous studies that indicated the creation of metastable Al n/12Ga1-n/12N (n: consecutive natural numbers). Furthermore, QW thicknesses of consecutive n ML may imply that Al1/3Ga2/3N and Al1/2Ga1/2N have 1 ML configurations of Al and Ga atoms on a c(0001) plane.

    DOI: 10.1088/1361-6463/ac2065

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  101. Multiple electron beam generation from InGaN photocathode Reviewed

    Sato Daiki, Shikano Haruka, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 39 ( 6 )   2021.12

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    In this study, we generated 25 multielectron beam (MEB) using an InGaN photocathode with a negative electron affinity state irradiating with 25 multilaser beam. The uniformity of the MEB and the total electron beam current were evaluated. A laser beam was split into 25 laser beams using a spatial light modulator. The coefficient of variation (CV) of laser power was 20%. The CV of quantum efficiency was 1.1%. The CV of electron beam current was 12%, and the total current was about 1.2 μA. These results will enhance the development of the MEB-defect inspection using the InGaN photocathode.

    DOI: 10.1116/6.0001272

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  102. Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions Reviewed

    Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B

    IEEE TRANSACTIONS ON ELECTRON DEVICES   Vol. 68 ( 12 ) page: 6059 - 6064   2021.12

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    Conventional lumped small signal circuit (SSC) models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are derived from the low frequency portion of the experimentally measured ${Y}$ -parameters. Consequently, these models cannot faithfully capture the high frequency behavior of the device. In this work, modified SSC models of AlGaN/GaN MOS-HEMTs are developed by fitting the entire broadband measured ${Y}$ -parameters of the device with rational functions. These rational functions are then physically realized using additional passive circuit elements added to the conventional SSC model. The accuracy of the proposed SSC models can be improved by increasing the order of the rational functions. The proposed models are demonstrably more accurate than the conventional SSC models in estimating the higher order poles and zeroes present in the experimentally measured ${Y}$ -parameters of AlGaN/GaN MOS-HEMTs.

    DOI: 10.1109/TED.2021.3119528

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  103. Vertical GaN p<SUP>+</SUP>-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy (vol 119, 152102, 2021) Reviewed

    Ohnishi, K; Kawasaki, S; Fujimoto, N; Nitta, S; Watanabe, H; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 119 ( 20 )   2021.11

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    After the paper was published,1we found errors in the manuscript shown in page 152102-2. In the original published article, the SIMS detec-tion limits of [O] and [H] were written as 7 × 1015and 3 × 1015cm-3, respectively. The corrected detection limits of [O] and [H] are 6 × 1015and 3 × 1016cm-3, respectively. The SIMS depth profiles shown in Fig. 2(b) and the conclusions of the paper are not affected by this erratum.

    DOI: 10.1063/5.0077364

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  104. OBITUARY Isamu Akasaki Reviewed

    Amano, H

    PHYSICS TODAY   Vol. 74 ( 11 ) page: 63 - 63   2021.11

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  105. Vertical GaN p<SUP>+</SUP>-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy Reviewed

    Ohnishi, K; Kawasaki, S; Fujimoto, N; Nitta, S; Watanabe, H; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 119 ( 15 )   2021.10

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    A vertical GaN p+-n junction diode with an ideal breakdown voltage was grown by halide vapor phase epitaxy (HVPE). A steep p+-n interface was observed even with the use of the HVPE method. No Si-accumulating layer was formed at the p+-n interface because of the continuous HVPE growth from the n-type drift layer to the p-type layer. This method provides improved electrical properties compared with the regrowth of p-type GaN layers. The minimum ideality factor of approximately 1.6 was obtained. The breakdown voltage increased from 874 to 974 V with the increase in the temperature from 25 to 200 °C, which suggests that avalanche multiplication causes the breakdown. The temperature-dependent breakdown voltage was in good agreement with the breakdown voltage calculated using the ideal critical electric field. These results indicate that HVPE is promising for the fabrication of vertical GaN power devices.

    DOI: 10.1063/5.0066139

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  106. Effective neutron detection using vertical-type BGaN diodes Reviewed

    Nakano, T; Mochizuki, K; Arikawa, T; Nakagawa, H; Usami, S; Honda, Y; Amano, H; Vogt, A; Schuett, S; Fiederle, M; Kojima, K; Chichibu, SF; Inoue, Y; Aoki, T

    JOURNAL OF APPLIED PHYSICS   Vol. 130 ( 12 )   2021.9

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    In this study, vertical-type thick BGaN PIN diodes were successfully fabricated to improve the neutron capture rate of BGaN diodes by improving the BGaN epitaxial growth technique. In this technique, 5-μm-thick epitaxial growth was achieved using trimethylboron as a B metal-organic source, which suppressed the gas-phase reaction. The α-particle energy spectrum, the neutron pulse signal, and the residual energy of particles emitted from a neutron capture reaction were measured using the fabricated BGaN diodes by performing radiation detection measurements. The detected signal position in the neutron detection signal spectrum was similar to that of 2.3 MeV α-particles. These results indicate that vertical-type BGaN diodes can be used as effective neutron detectors.

    DOI: 10.1063/5.0051053

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  107. Effects of Current, Temperature, and Chip Size on the Performance of AlGaInP-Based Red Micro-Light-Emitting Diodes with Different Contact Schemes

    Lee, DH; Lee, SY; Shim, JI; Seong, TY; Amano, H

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 10 ( 9 )   2021.9

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    We have investigated the performance of AlGaInP-based red micro-light-emitting diodes (micro-LEDs) with different n-type contact schemes as functions of current, ambient temperature, and chip size. The samples with AuGe/Ni/Au contact revealed wider full width at half maximum of electroluminescence than that with the Pd/Ge contact. All samples also exhibited broad peaks at wavelengths between ∼632 and ∼640 nm, whose intensity depended on the type of contact schemes and temperature. Regardless of the contact schemes, the 10 μm-size samples showed a larger temperature-dependent reduction in the output power at current density of <50 A cm-2 than the 100 μm-size ones. Above 100 A cm-2, however, both samples showed similar temperature dependence. Irrespective of the contact schemes, the main peak of the 100-μm samples was red-shifted, whereas no red-shift was detected in the 10-μm samples. The third peak of the AuGe-based contact samples became more dominant at 700 A cm-2 than the main peak, whereas that of the PdGe contact samples became more dominant at 1000 A cm-2. Based on the chip size, current, contact scheme, and temperature dependence, the performance degradation of the red micro-LEDs is described and discussed.

    DOI: 10.1149/2162-8777/ac2029

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  108. Quasi-ballistic thermal conduction in 6H-SiC Reviewed

    Cheng, Z; Lu, W; Shi, J; Tanaka, D; Protik, NH; Wang, S; Iwaya, M; Takeuchi, T; Kamiyama, S; Akasaki, I; Amano, H; Graham, S

    MATERIALS TODAY PHYSICS   Vol. 20   2021.9

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    The minimization of electronics makes heat dissipation of related devices an increasing challenge. When the size of materials is smaller than the phonon mean free paths, phonons transport without internal scattering and laws of diffusive thermal conduction need to be revisited. This work reports the temperature dependent thermal conductivity of doped epitaxial 6H–SiC and monocrystalline porous 6H–SiC below room temperature probed by time-domain thermoreflectance. Strong quasi-ballistic thermal transport was observed in these samples, especially at low temperatures. Doping and structural boundaries were applied to tune the quasi-ballistic thermal transport since dopants selectively scatter high-frequency phonons while boundaries scatter phonons with long mean free paths. Exceptionally strong phonon scattering by boron dopants are observed, compared to nitrogen dopants. Furthermore, orders of magnitude reduction in the measured thermal conductivity was observed at low temperatures for the porous 6H–SiC compared to the epitaxial 6H–SiC. Finally, first principles calculations and a simple Callaway model are built to understand the measured thermal conductivities. Our work sheds light on the fundamental understanding of thermal conduction in technologically-important wide bandgap semiconductors such as 6H–SiC and will impact applications such as thermal management of 6H–SiC-related electronics and devices.

    DOI: 10.1016/j.mtphys.2021.100462

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  109. Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing Reviewed

    Sena, H; Tanaka, A; Wani, Y; Aratani, T; Yui, T; Kawaguchi, D; Sugiura, R; Honda, Y; Igasaki, Y; Amano, H

    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING   Vol. 127 ( 9 )   2021.9

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    Gallium nitride (GaN)-based devices surpass the traditional silicon-based power devices in terms of higher breakdown voltage, faster-switching speed, higher thermal conductivity, and lower on-resistance. However, heteroepitaxial GaN growths like GaN on sapphire are not suitable for power devices due to the threading dislocation densities as high as 108/cm2. Recently, homoepitaxial GaN growth has become possible thanks to the native GaN substrates with dislocation densities in the order of 104/cm2 but the extremely high cost of the GaN substrates makes the homoepitaxy method unacceptable for industrial applications, and the slicing of wafers for reusing them is an effective solution for cost reduction. In this study, we will investigate a route for slicing the GaN single crystal substrate by controlling the laser pulse energy and changing the distance between each laser shot. The 2D and 3D crack propagations are observed by a multiphoton confocal microscope, and the cross section of samples is observed by a scanning electron microscope (SEM). The results showed that two types of radial and lateral cracking occurred depending on the pulse energy and shot pitch, and controlling them was of importance for attaining a smooth GaN substrate slicing. Cross-sectional SEM images showed that at suitable pulse energy and distance, crack propagation could be controlled with respect to the irradiation plane.

    DOI: 10.1007/s00339-021-04808-y

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  110. High-Gain Gated Lateral Power Bipolar Junction Transistor Reviewed

    Wang, J; Xie, YH; Amano, H

    IEEE ELECTRON DEVICE LETTERS   Vol. 42 ( 9 ) page: 1370 - 1373   2021.9

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    We demonstrated a prototype Gated Lateral power bipolar junction transistor (GLP-BJT) on wide bandgap semiconductor. The device combined the intrinsic advantages of high current gain of a Gated Lateral-BJT and good current handling and voltage blocking capabilities of GaN material. As a result, the common-emitter current gain remained over 300 at a high collector current density of 2 kA/cm2 despite a wide p-base region of 2 &#x03BC;m. The open base breakdown voltage BVCEO was over 300 V corresponding to a high critical field of 2.5 MV/cm. These figures of merit show great promise of GaN-based GLP-BJT in power applications and also shed light on the development of state-of-the-art bipolar transistors based on other wide bandgap semiconductors.

    DOI: 10.1109/LED.2021.3099982

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  111. Stable electrical performance of AlGaInP-based red micro-light emitting diode by controlling interfacial morphologies of metal contacts

    Lee D.H., Seong Tae-Yeon, Amano Hiroshi

    Journal of Alloys and Compounds   Vol. 872   page: 159629   2021.8

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    DOI: 10.1016/j.jallcom.2021.159629

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  112. Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers

    Matsukura, Y; Inazu, T; Pernot, C; Shibata, N; Kushimoto, M; Deki, M; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 8 )   2021.8

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    In this study, we investigated the relationship of light output power with the optical thickness of the p-layers in AlGaN-based deep ultraviolet light-emitting diodes with a transparent high-Al-composition p-AlGaN clad layer, a thin p-GaN contact layer, and a reflective p-type electrode. By adjusting the thickness of the transparent high-Al-composition p-AlGaN clad layer, we observed a marked change in light output power. A maximum light output power of 385 mW at 1500 mA, a maximum external quantum efficiency of 15.7% at 10 mA, and a maximum wall-plug efficiency of 15.3% at 10 mA were obtained at an emission wavelength of 275 nm.

    DOI: 10.35848/1882-0786/ac154c

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  113. Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations

    Nagata K., Makino H., Miwa H., Matsui S., Boyama S., Saito Y., Kushimoto M., Honda Y., Takeuchi T., Amano H.

    Applied Physics Express   Vol. 14 ( 8 )   2021.8

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    We reduced the operating voltage of AlGaN homojunction tunnel junction (TJ) deep-ultraviolet (UV) light-emitting diodes (LEDs) by two approaches: the suppression of carbon incorporation and the doping of a high concentration of silicon in an n+-AlGaN layer. The AlGaN homojunction TJ deep-UV LEDs had a significantly reduced forward voltage upon suppressing the incorporation of carbon in the n+-AlGaN layer. The suppression of electron compensation by carbon in nitrogen sites and the doping of a high concentration of silicon in an n+-AlGaN layer are important for reducing the operating voltage of AlGaN homojunction TJ deep-UV LEDs.

    DOI: 10.35848/1882-0786/ac0fb6

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  114. Impact of gate electrode formation process on Al<inf>2</inf>O<inf>3</inf>/GaN interface properties and channel mobility

    Ando Y., Deki M., Watanabe H., Taoka N., Tanaka A., Nitta S., Honda Y., Yamada H., Shimizu M., Nakamura T., Amano H.

    Applied Physics Express   Vol. 14 ( 8 )   2021.8

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    The interface properties of GaN metal-insulator-semiconductor (MIS) structures with a gate electrode metal deposited by electron beam (EB) or resistive heating evaporation were investigated. Also, the impact of the interface properties on the channel mobility in GaN MIS field-effect transistors was investigated. It was confirmed that interface charges including both interface states and positive fixed charges were introduced to an Al2O3/GaN interface by the formation of a gate electrode by EB evaporation. Consequently, the introduced interface charges degraded the electron mobility in the MIS channel.

    DOI: 10.35848/1882-0786/ac0ffa

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  115. Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy

    Ohnishi, K; Amano, Y; Fujimoto, N; Nitta, S; Watanabe, H; Honda, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   Vol. 566   2021.7

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    The electrical properties and structural defects of p-type GaN layers with Mg concentrations from 8.0 × 1018 to 8.3 × 1019 cm−3 grown by halide vapor phase epitaxy (HVPE) were investigated. In all samples, p-type conduction was confirmed at room temperature. The hole concentration at room temperature decreased in a heavily Mg-doped sample. By analyzing the results of Hall-effect measurements at various temperatures, the acceptor concentration decreased in a heavily Mg-doped sample, whereas the compensating donor concentration increased. These results affect the decrease in the hole concentration. The hole mobility decreased with increasing acceptor concentration. In the heavily Mg-doped sample, pyramidal inversion domains (PIDs) were formed. The size of each PID in an HVPE-grown sample is in good agreement with that Mg-doped GaN layers grown by metalorganic vapor phase epitaxy (MOVPE). Thus, the formation mechanism of PIDs in HVPE-grown samples is possibly the same as that in MOVPE-grown samples. Energy-dispersive X-ray spectroscopy shows that Mg atoms accumulate in PIDs, which suggests that Mg atoms in PIDs are electrically inactive, inhibiting the increase in the acceptor concentration. These results are useful guidelines for fabricating p-type GaN layers with higher hole concentrations by HVPE.

    DOI: 10.1016/j.jcrysgro.2021.126173

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  116. 赤﨑勇先生のご逝去を悼む

    天野 浩

    応用物理   Vol. 90 ( 7 ) page: 455 - 455   2021.7

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    DOI: 10.11470/oubutsu.90.7_455

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  117. 赤﨑 勇先生を偲んで

    天野 浩

    日本物理学会誌   Vol. 76 ( 7 ) page: 478 - 478   2021.7

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    <p>追悼</p><p>赤﨑 勇先生を偲んで</p>

    DOI: 10.11316/butsuri.76.7_478

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  118. Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

    Liao Y., Chen T., Wang J., Ando Y., Cai W., Yang X., Watanabe H., Hirotani J., Tanaka A., Nitta S., Honda Y., Chen K.J., Amano H.

    Japanese Journal of Applied Physics   Vol. 60 ( 7 )   2021.7

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    An optimized top-down approach was utilized to fabricate vertical GaN-on-GaN nanowire Schottky barrier diodes (NWSBDs) in this letter. The suppressed reverse leakage current and enhanced breakdown voltage (BV) of the vertical GaN NWSBDs are attributed to the reduced electric field at the interface of the Schottky junction achieved through the dielectric reduced surface field technique. As-fabricated NWSBD delivers a low turn-on voltage of 0.80 V, a near-unity ideality factor of 1.04, along with a soft BV of 480 V. The measured soft BV is comparable with the avalanche BV of the p-n diode with a similar net doping concentration in the drift region.

    DOI: 10.35848/1347-4065/ac06b5

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  119. Isamu Akasaki: The Pioneer of Blue LEDs and his Collaboration with <i>pss</i> OBITUARY

    Amano, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 218 ( 14 )   2021.7

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    DOI: 10.1002/pssa.202100329

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  120. Non-polar true-lateral GaN power diodes on foreign substrates

    Wang, J; Yu, G; Zong, H; Liao, YQ; Lu, WF; Cai, WT; Hu, XD; Xie, YH; Amano, H

    APPLIED PHYSICS LETTERS   Vol. 118 ( 21 )   2021.5

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    We have demonstrated non-polar GaN power diodes (Schottky barrier diode and p-n junction diode) on foreign substrates featuring the true-lateral p-n and metal-semiconductor junctions. The diodes were fabricated on GaN islands laterally overgrown on the mask-patterned sapphire and Si substrates by metalorganic vapor phase epitaxy. The anode and cathode were formed on the opposed a-plane sidewalls of the island, making the device architecture essentially like the 90° rotation of the desired true-vertical power diodes. The ideality factor of the Schottky barrier diode remained 1.0 (from 1.00 to 1.05) over 7 decades in current. Specifically, a high critical electric field of 3.3 MV/cm was demonstrated on the p-n junction diode with avalanche capability. These performances reveal a strong potential of non-polar GaN with the true-lateral junctions for high power applications.

    DOI: 10.1063/5.0051552

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  121. The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation.

    Park JH, Yang X, Lee JY, Park MD, Bae SY, Pristovsek M, Amano H, Lee DS

    Chemical science   Vol. 12 ( 22 ) page: 7713 - 7719   2021.5

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    A challenging approach, but one providing a key solution to material growth, remote epitaxy (RE)—a novel concept related to van der Waals epitaxy (vdWE)—requires the stability of a two-dimensional (2-D) material. However, when graphene, a representative 2-D material, is present on substrates that have a nitrogen atom, graphene loss occurs. Although this phenomenon has remained a hurdle for over a decade, restricting the advantages of applying graphene in the growth of III-nitride materials, few previous studies have been conducted. Here, we report the stability of graphene on substrates containing oxygen or nitrogen atoms. Graphene has been observed on highly decomposed Al2O3; however, graphene loss occurred on decomposed AlN at temperatures over 1300 °C. To overcome graphene loss, we investigated 2-D hexagonal boron nitride (h-BN) as an alternative. Unlike graphene on AlN, it was confirmed that h-BN on AlN was intact after the same high-temperature process. Moreover, the overgrown AlN layers on both h-BN/AlN and h-BN/Al2O3could be successfully exfoliated, which indicates that 2-D h-BN survived after AlN growth and underlines its availability for the vdWE/RE of III-nitrides with further mechanical transfer. By enhancing the stability of the 2-D material on the substrate, our study provides insights into the realization of a novel epitaxy concept.

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  122. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

    Kumabe Takeru, Ando Yuto, Watanabe Hirotaka, Deki Manato, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SB ) page: SBBD03   2021.5

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    DOI: 10.35848/1347-4065/abd538

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  123. Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate

    Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Honda Yoshio, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 5 ) page: 051003   2021.5

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    DOI: 10.35848/1882-0786/abf443

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  124. Micro-Light Emitting Diode: From Chips to Applications

    Parbrook Peter J., Corbett Brian, Han Jung, Seong Tae-Yeon, Amano Hiroshi

    LASER & PHOTONICS REVIEWS   Vol. 15 ( 5 ) page: 2000133   2021.5

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    DOI: 10.1002/lpor.202000133

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  125. Discrete AlN mole fraction of n/12 (n = 4-8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

    Y. Nagasawa, A. Hirano, M. Ippommatsu, H. Sako, A. Hashimoto, R. Sugie, Y. Honda, H. Amano, I. Akasaki, K. Kojima, S. F. Chichibu

    Journal of Applied Physics   Vol. 129 ( 16 ) page: 164503   2021.4

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    DOI: 10.1063/5.0042036

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  126. Experimental demonstration of GaN IMPATT diode at X-band

    Kawasaki Seiya, Ando Yuto, Deki Manato, Watanabe Hirotaka, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Arai Manabu, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 4 ) page: 046501   2021.4

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    DOI: 10.35848/1882-0786/abe3dc

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  127. Optimization of Ni/Ag-Based Reflectors to Improve the Performance of 273 nm Deep Ultraviolet AlGaN-Based Light Emitting Diodes

    Sim Kee-Baek, Kim Su-Kyung, Lee Hwa-Seub, Lee Sang-Youl, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 10 ( 4 ) page: 045005   2021.4

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    DOI: 10.1149/2162-8777/abf49b

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  128. Numerical simulation of ammonothermal crystal growth of GaN-current state, challenges, and prospects

    Crystals   Vol. 11 ( 4 ) page: 356   2021.4

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    DOI: 10.3390/cryst11040356

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  129. Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography.

    Avit G, Robin Y, Liao Y, Nan H, Pristovsek M, Amano H

    Scientific reports   Vol. 11 ( 1 ) page: 6754   2021.3

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    DOI: 10.1038/s41598-021-86139-9

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  130. Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

    Kangawa Yoshihiro, Kusaba Akira, Kempisty Pawel, Shiraishi Kenji, Nitta Shugo, Amano Hiroshi

    CRYSTAL GROWTH & DESIGN   Vol. 21 ( 3 ) page: 1878 - 1890   2021.3

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    DOI: 10.1021/acs.cgd.0c01564

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  131. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

    Yamada Takehiro, Ando Yuto, Watanabe Hirotaka, Furusawa Yuta, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Suda Jun, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 3 ) page: 036505   2021.3

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    DOI: 10.35848/1882-0786/abe657

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  132. Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth-A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution

    Schimmel Saskia, Tomida Daisuke, Saito Makoto, Bao Quanxi, Ishiguro Toru, Honda Yoshio, Chichibu Shigefusa, Amano Hiroshi

    CRYSTALS   Vol. 11 ( 3 ) page: 1 - 27   2021.3

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    DOI: 10.3390/cryst11030254

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  133. Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication

    Yasuda Hidehiro, Nishitani Tomohiro, Ichikawa Shuhei, Hatanaka Shuhei, Honda Yoshio, Amano Hiroshi

    QUANTUM BEAM SCIENCE   Vol. 5 ( 1 ) page: 5   2021.3

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    DOI: 10.3390/qubs5010005

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  134. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

    Liu T., Watanabe H., Nitta S., Wang J., Yu G., Ando Y., Honda Y., Amano H., Tanaka A., Koide Y.

    APPLIED PHYSICS LETTERS   Vol. 118 ( 7 ) page: 072103   2021.2

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    DOI: 10.1063/5.0034584

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  135. Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020)

    Sato Shin-Ichiro, Deki Manato, Watanabe Hirotaka, Nitta Shugo, Honda Yoshio, Nishimura Tomoaki, Gibson Brant C., Greentree Andrew D., Amano Hiroshi, Ohshima Takeshi

    OPTICAL MATERIALS EXPRESS   Vol. 11 ( 2 ) page: 524 - 524   2021.2

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    DOI: 10.1364/OME.420328

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  136. 3D GaN Power Switching Electronics: A Revival of Interest in ELO

    Wang, J; Amano, H; Xie, YH

    2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)     2021

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    We reported the first-time utilization of ELO (epitaxial lateral overgrowth) GaN (gallium nitride) for power diodes. The undesired stage of coalescence related to ELO is avoided by virtue of a novel 3D device architecture built on the ELO GaN islands on foreign substrate which features pure-lateral p-n and n+ -n-junctions and electrodes lying on the opposing sidewalls of the island. Excellent electrical performance was demonstrated, revealing a strong potential of ELO GaN with 3D device architecture for power switching applications.

    DOI: 10.1109/EDTM50988.2021.9420859

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  137. Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs

    Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Honda, Y; Roy, S; Amano, H; Sarkar, B

    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 9   page: 570 - 581   2021

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    Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up of constant valued circuit elements. Such models are unable to capture the high frequency behavior (above 20 GHz) of the device. In this work, a modified small signal equivalent circuit model of AlGaN/GaN MOS-HEMTs is presented. The key feature of the proposed model is that the values of the different circuit elements in the model are considered to be frequency dependent in nature and not constants. The frequency dependent value of each circuit element is mathematically represented using polynomial functions where the coefficients of the functions are determined via a least-square curve fitting approach. This frequency dependent attribute of the circuit element values ensures that the proposed model is very accurate at high frequencies without sacrificing the compactness of the model topology. The accuracy of the proposed model has been verified up to 50 GHz using experimentally measured Y-parameters of AlGaN/GaN MOS-HEMTs having a different gate dielectric and gate length.

    DOI: 10.1109/JEDS.2021.3081463

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  138. Development of UV-C laser diodes on AlN substrate

    Kushimoto M.

    Proceedings of SPIE - The International Society for Optical Engineering   Vol. 11686   2021

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    DOI: 10.1117/12.2575872

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  139. Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: A model based on rate equations

    Piva F.

    Proceedings of SPIE - The International Society for Optical Engineering   Vol. 11686   2021

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    DOI: 10.1117/12.2578134

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  140. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 24 ) page: 242104   2020.12

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    DOI: 10.1063/5.0028516

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  141. The 2020 UV emitter roadmap

    Amano Hiroshi, Collazo Ramon, Santi Carlo De, Einfeldt Sven, Funato Mitsuru, Glaab Johannes, Hagedorn Sylvia, Hirano Akira, Hirayama Hideki, Ishii Ryota, Kashima Yukio, Kawakami Yoichi, Kirste Ronny, Kneissl Michael, Martin Robert, Mehnke Frank, Meneghini Matteo, Ougazzaden Abdallah, Parbrook Peter J., Rajan Siddharth, Reddy Pramod, Roemer Friedhard, Ruschel Jan, Sarkar Biplab, Scholz Ferdinand, Schowalter Leo J., Shields Philip, Sitar Zlatko, Sulmoni Luca, Wang Tao, Wernicke Tim, Weyers Markus, Witzigmann Bernd, Wu Yuh-Renn, Wunderer Thomas, Zhang Yuewei

    Journal of Physics D: Applied Physics   Vol. 53 ( 50 ) page: 503001   2020.12

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    DOI: 10.1088/1361-6463/aba64c

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  142. Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps

    Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sako Hideki, Hashimoto Ai, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Kojima Kazunobu, Chichibu Shigefusa F.

    Applied Physics Express   Vol. 13 ( 12 ) page: 124001   2020.12

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    DOI: 10.35848/1882-0786/abcb49

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  143. Surface passivation of light emitting diodes: From nano-size to conventional mesa-etched devices

    Seong Tae-Yeon, Amano Hiroshi

    SURFACES AND INTERFACES   Vol. 21   page: 100765   2020.12

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    DOI: 10.1016/j.surfin.2020.100765

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  144. State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods

    Evropeitsev Evgenii A., Kazanov Dmitrii R., Robin Yoann, Smirnov Alexander N., Eliseyev Ilya A., Davydov Valery Yu., Toropov Alexey A., Nitta Shugo, Shubina Tatiana V., Amano Hiroshi

    SCIENTIFIC REPORTS   Vol. 10 ( 1 ) page: 19048   2020.11

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    DOI: 10.1038/s41598-020-76042-0

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  145. Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy

    Robin Y., Bournet Q., Avit G., Pristovsek M., Andre Y., Trassoudaine A., Amano H.

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 35 ( 11 ) page: 115005   2020.11

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    DOI: 10.1088/1361-6641/abad73

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  146. Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: From injection efficiency to mid-gap state generation

    PIVA F.

    Photonics Research   Vol. 8 ( 11 ) page: 1786 - 1791   2020.11

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    DOI: 10.1364/PRJ.401785

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  147. Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate.

    Yang X, Pristovsek M, Nitta S, Liu Y, Honda Y, Koide Y, Kawarada H, Amano H

    ACS applied materials & interfaces   Vol. 12 ( 41 ) page: 46466 - 46475   2020.10

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    DOI: 10.1021/acsami.0c11883

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  148. Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes

    Zhang Ziyi, Kushimoto Maki, Horita Masahiro, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 117 ( 15 ) page: 152104   2020.10

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    DOI: 10.1063/5.0027789

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  149. Optical properties of neodymium ions in nanoscale regions of gallium nitride

    Sato S.I.

    Optical Materials Express   Vol. 10 ( 10 ) page: 2614 - 2623   2020.10

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    DOI: 10.1364/OME.401765

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  150. Single-chip imaging system that simultaneously transmits light

    Wang Yongjin, Gao Xumin, Fu Kang, Qin Feifei, Zhu Hongbo, Liu Yuhuai, Amano Hiroshi

    Applied Physics Express   Vol. 13 ( 10 )   2020.10

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    DOI: 10.35848/1882-0786/abb786

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  151. High frequency GaN Devices for Realizing Wirelss Power Transmission System Invited Reviewed

    Hiroshi Amano

    J. IEICE   Vol. 103 ( 10 ) page: 1016 - 1022   2020.10

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    Other Link: https://www.journal.ieice.org/bin/pdf_link.php?fname=k103_10_1016&lang=J&year=2020

  152. Single-chip imaging system that simultaneously transmits light

    Wang, YJ; Gao, XM; Fu, K; Qin, FF; Zhu, HB; Liu, YH; Amano, H

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 10 )   2020.10

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  153. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

    Sato S.i.

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   Vol. 479   page: 7 - 12   2020.9

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    DOI: 10.1016/j.nimb.2020.06.007

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  154. Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

    Ando Yuto, Nagamatsu Kentaro, Deki Manato, Taoka Noriyuki, Tanaka Atsushi, Nitta Shugo, Honda Yoshio, Nakamura Tohru, Amano Hiroshi

    Applied Physics Letters   Vol. 117 ( 10 ) page: 102012   2020.9

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    DOI: 10.1063/5.0010774

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  155. Design and characterization of a low-optical-loss UV-C laser diode

    Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    Japanese Journal of Applied Physics   Vol. 59 ( 9 )   2020.9

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    DOI: 10.35848/1347-4065/abaac6

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  156. Design and characterization of a low-optical-loss UV-C laser diode

    Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 9 )   2020.9

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  157. Increasing the Luminescence Efficiency of Long-Wavelength (In,Ga)N Quantum Well Structures by Electric Field Engineering Using an (Al,Ga)N Capping Layer

    Vichi Stefano, Robin Yoann, Sanguinetti Stefano, Pristovsek Markus, Amano Hiroshi

    PHYSICAL REVIEW APPLIED   Vol. 14 ( 2 ) page: 024018   2020.8

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    DOI: 10.1103/PhysRevApplied.14.024018

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  158. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

    Tomoya Kimura, Kazuki Ohnishi, Yuki Amano, Naoki Fujimoto, Masaaki Araidai, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Kangawa, Kenji Shiraish

    Japanese Journal of Applied Physics   Vol. 59 ( 8 ) page: 088001   2020.8

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    DOI: 10.35848/1347-4065/aba0d5

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  159. Growth of high-quality GaN by halogen-free vapor phase epitaxy

    Kimura Taishi, Kataoka Keita, Uedono Akira, Amano Hiroshi, Nakamura Daisuke

    Applied Physics Express   Vol. 13 ( 8 ) page: 085509   2020.8

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    DOI: 10.35848/1882-0786/aba494

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  160. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

    Kimura Tomoya, Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Araidai Masaaki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Kangawa Yoshihiro, Shiraishi Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 8 )   2020.8

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  161. Growth of high-quality GaN by halogen-free vapor phase epitaxy

    Kimura Taishi, Kataoka Keita, Uedono Akira, Amano Hiroshi, Nakamura Daisuke

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 8 )   2020.8

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  162. Pulsed-flow growth of polar, semipolar and nonpolar AlGaN

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF MATERIALS CHEMISTRY C   Vol. 8 ( 25 ) page: 8668 - 8675   2020.7

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    DOI: 10.1039/d0tc01369b

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  163. Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p-n diodes

    T. Nakano, Y. Harashima, K. Chokawa, K. Shiraishi, A. Oshiyama, Y. Kangawa, S. Usami, N. Mayama, K. Toda, A. Tanaka, Y. Honda, H. Amano

    Applied Physics Letters   Vol. 117 ( 1 ) page: 012105   2020.7

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    DOI: 10.1063/5.0010664

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  164. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

    Abhinay Sandupatla, Subramaniam Arulkumaran, Geok Ing Ng, Kumud Ranjan, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    Applied Physics Express   Vol. 13 ( 7 ) page: 074001   2020.7

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    DOI: 10.35848/1882-0786/ab93a0

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  165. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ng Geok Ing, Ranjan Kumud, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 7 )   2020.7

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  166. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

    Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 217 ( 14 ) page: 1900955   2020.7

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    DOI: 10.1002/pssa.201900955

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  167. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

    Liu Qiang, Fujimoto Naoki, Shen Jian, Nitta Shugo, Tanaka Atsushi, Honda Yoshio, Sitar Zlatko, Bockowski Michal, Kumagai Yoshinao, Amano Hiroshi

    Journal of Crystal Growth   Vol. 539   page: 125643   2020.6

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    DOI: 10.1016/j.jcrysgro.2020.125643

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  168. Halide vapor phase epitaxy of p-Type Mg-doped GaN utilizing MgO

    Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    Applied Physics Express   Vol. 13 ( 6 ) page: 016007   2020.6

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    DOI: 10.35848/1882-0786/ab9166

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  169. Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

    Ohnishi Kazuki, Amano Yuki, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 6 )   2020.6

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  170. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

    Liu, Q; Fujimoto, N; Shen, J; Nitta, S; Tanaka, A; Honda, Y; Sitar, Z; Bockowski, M; Kumagai, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   Vol. 539   2020.6

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  171. Oxygen Incorporation Kinetics in Vicinal m(10-10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy

    Yosho Daichi, Shintaku Fumiya, Inatomi Yuya, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 14 ( 6 ) page: 2000142   2020.6

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    DOI: 10.1002/pssr.202000142

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  172. Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors.

    Sandupatla A, Arulkumaran S, Ing NG, Nitta S, Kennedy J, Amano H

    Micromachines   Vol. 11 ( 5 ) page: 519   2020.5

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    DOI: 10.3390/mi11050519

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  173. Improving the Leakage Characteristics and Efficiency of GaN-based Micro-Light-Emitting Diode with Optimized Passivation

    Lee Hoon, Lee Jung-Hoon, Park Jin-Seong, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 5 ) page: 055001   2020.5

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    DOI: 10.1149/2162-8777/ab915d

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  174. Impact of high-Temperature implantation of Mg ions into GaN

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

    Japanese Journal of Applied Physics   Vol. 59 ( 5 ) page: 056502   2020.5

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    DOI: 10.35848/1347-4065/ab8b3d

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  175. Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE

    Shintaku Fumiya, Yosho Daichi, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

    Applied Physics Express   Vol. 13 ( 5 ) page: 055507   2020.5

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    DOI: 10.35848/1882-0786/ab8723

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  176. Impact of high-temperature implantation of Mg ions into GaN

    Takahashi, M; Tanaka, A; Ando, Y; Watanabe, H; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Shima, K; Kojima, K; Chichibu, SF; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 5 )   2020.5

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  177. Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE

    Shintaku Fumiya, Yosho Daichi, Kangawa Yoshihiro, Iwata Jun-Ichi, Oshiyama Atsushi, Shiraishi Kenji, Tanaka Atsushi, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 5 )   2020.5

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  178. Improved Leakage and Output Characteristics of Pixelated LED Array for Headlight application

    Lee Sang-Youl, Kang Kiman, Lee Eunduk, Jo Yoomin, Kim Doyub, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 4 ) page: 045011   2020.4

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    DOI: 10.1149/2162-8777/ab8b6f

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  179. Experimental observation of high intrinsic thermal conductivity of AlN

    Cheng Zhe, Koh Yee Rui, Mamun Abdullah, Shi Jingjing, Bai Tingyu, Huynh Kenny, Yates Luke, Liu Zeyu, Li Ruiyang, Lee Eungkyu, Liao Michael E., Wang Yekan, Yu Hsuan Ming, Kushimoto Maki, Luo Tengfei, Goorsky Mark S., Hopkins Patrick E., Amano Hiroshi, Khan Asif, Graham Samuel

    PHYSICAL REVIEW MATERIALS   Vol. 4 ( 4 ) page: 044602   2020.4

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    DOI: 10.1103/PhysRevMaterials.4.044602

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  180. Tungsten carbide layers deposited on graphite substrates via a wet powder process as anti-parasitic-reaction coatings for reactor components in GaN growth

    Nakamura Daisuke, Kimura Taishi, Itoh Kenji, Fujimoto Naoki, Nitta Shugo, Amano Hiroshi

    CRYSTENGCOMM   Vol. 22 ( 15 ) page: 2632 - 2641   2020.4

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    DOI: 10.1039/c9ce01971e

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  181. Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

    Lee Sang-Youl, Moon Ji Hyung, Moon Yong-Tae, Kim Chung Song, Park Sunwoo, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    IEEE PHOTONICS TECHNOLOGY LETTERS   Vol. 32 ( 7 ) page: 438 - 441   2020.4

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    DOI: 10.1109/LPT.2020.2977376

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  182. Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers

    Hainey Mel Jr., Robin Yoann, Avit Geoffrey, Amano Hiroshi, Usami Noritaka

    JOURNAL OF CRYSTAL GROWTH   Vol. 535   page: 125522   2020.4

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    DOI: 10.1016/j.jcrysgro.2020.125522

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  183. Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

    Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 ) page: 1900553   2020.4

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    DOI: 10.1002/pssb.201900553

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  184. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

    Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J., Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 116 ( 12 ) page: 122101   2020.3

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    DOI: 10.1063/1.5145017

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  185. Effects of Ultraviolet Wavelength and Ambient Temperature on Reliability of Silicones in InAlGaN-Based Light-Emitting-Diode Package

    Kim Ho-Young, Lee Jong-Woo, Jun Duk-Jin, Song Sung-Joo, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 3 ) page: 035005   2020.3

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    DOI: 10.1149/2162-8777/ab7c40

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  186. Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

    Yamamoto K, Nakano K, Tanaka A, Honda Y, Ando Y, Ogura M, Matsumoto M, Anada S, Ishikawa Y, Amano H, Hirayama T

    Microscopy (Oxford, England)   Vol. 69 ( 1 ) page: 1-10   2020.3

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    DOI: 10.1093/jmicro/dfz037

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  187. Using SiO2-Based Distributed Bragg Reflector to Improve the Performance of AlGaInP-Based Red Micro-Light Emitting Diode

    Lee Sang-Youl, Moon Ji Hyung, Moon Yong-Tae, Choi Byoungjun, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 3 ) page: 036002   2020.2

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    DOI: 10.1149/2162-8777/ab74c3

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  188. Using SiO<inf>2</inf>-based distributed Bragg reflector to improve the performance of AlGaInP-based red micro-light emitting diode

    Lee S.Y., Moon J.H., Moon Y.T., Choi B., Oh J.T., Jeong H.H., Seong T.Y., Amano H.

    ECS Journal of Solid State Science and Technology   Vol. 9 ( 3 )   2020.2

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    We have investigated how different types of the reflectors affected the optical and electrical performance of AlGaInP-based micro-LEDs. Simulations showed that the AlGaAs-based epitaxial distributed Bragg reflector (DBR) had a stopband at the 610–624 nm region with reflectivity of 90%, the SiO2/TiO2 dielectric DBR gave a stopband at the 580–770 nm range with a maximum reflectivity of 99%, and the ITO/Ag metal reflector exhibited reflectivity of 90% across the 400–800 nm region. All micro-LEDs gave forward voltages of 1.895–1.960 V at 20 μA. The micro-LEDs with the dielectric DBR and metal reflector yielded 31% and 13% higher light output at 20 μA than that with the epitaxial DBR, respectively. All of the micro-LEDs contained a shoulder peak at approximately 615 nm in their electroluminescence spectra. Ray-tracing simulations exhibited that the micro-LEDs with the dielectric DBR and metal reflector produced 26% and 22% higher total light output power than the one with the epitaxial DBR, respectively. It was also shown that for the micro-LEDs with the metal reflector, some of the micro-LEDs were detached from the metal reflectors due to the interfacial voids induced as a result of agglomeration of Ag layer during fabrication process.

    DOI: 10.1149/2162-8777/ab74c3/pdf

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  189. Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode

    Sato Daiki, Honda Anna, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi

    MICROELECTRONIC ENGINEERING   Vol. 223   page: 111229   2020.2

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    DOI: 10.1016/j.mee.2020.111229

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  190. Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode

    Lee Da-Hoon, Kang Daesung, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 53 ( 4 ) page: 045106   2020.1

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    DOI: 10.1088/1361-6463/ab52d0

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  191. Oblique-Angle Deposited SiO2/Al Omnidirectional Reflector for Enhancing the Performance of AlGaN-Based Ultraviolet Light-Emitting Diod

    Jeongwon Lee, Tae-Yeon Seong, Hiroshi Amano

    ECS Journal of Solid State Science and Technology   Vol. 9 ( 2 )   2020.1

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    DOI: 10.1149/2162-8777/ab709a

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  192. Oblique-Angle Deposited SiO2/Al Omnidirectional Reflector for Enhancing the Performance of AlGaN-Based Ultraviolet Light-Emitting Diode

    Jeongwon Lee, Tae-Yeon Seong, Hiroshi Amano

    ECS Journal of Solid State Science and Technology   Vol. 9 ( 2 ) page: 026005   2020.1

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    DOI: 10.1149/2162-8777/ab709a

  193. Heavy Mg Doping to Form Reliable Rh Reflective Ohmic Contact for 278 nm Deep Ultraviolet AlGaN-Based Light-Emitting Diodes

    Lee Sang-Youl, Han Dae-Seob, Lee Yong-Gyeong, Choi Kwang-Ki, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 6 ) page: 065016   2020.1

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    DOI: 10.1149/2162-8777/aba914

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  194. Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

    Abhinay S., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( 1 ) page: 010906   2020.1

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    DOI: 10.7567/1347-4065/ab65cd

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  195. Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum

    Daiki Sato, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   Vol. 38 ( 1 ) page: 012603   2020.1

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    DOI: 10.1116/1.5120417

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  196. Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

    Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

    2D MATERIALS   Vol. 7 ( 1 ) page: 015004   2020.1

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    DOI: 10.1088/2053-1583/ab46e6

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  197. Preface-JSS Focus Issue on Recent Advances inWide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki

    Ren Fan, Mishra Kailash C., Amano Hiroshi, Collins John, Han Jung, Im Won Bin, Kneissl Michael, Seong Tae-Yeon, Setlur Anant, Suski Tadek, Zych Eugeniusz

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 1 ) page: 010001   2020

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    DOI: 10.1149/2.0452001JSS

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  198. Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN

    Duc V Dinh, Nan Hu, Yoshio Honda, Hiroshi Amano, Markus Pristovsek

    Semiconductor Science and Technology   Vol. 35 ( 3 ) page: 035004   2020

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    DOI: 10.1088/1361-6641/ab63f1

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  199. Analysis of trimethylgallium decomposition by high-resolution mass spectrometry

    Zheng Ye, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 59 ( 2 ) page: 025511   2020

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    DOI: 10.35848/1347-4065/ab6fb0

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  200. Damage-Free Plasma Etching to Enhance Performance of AlGaInP-Based Micro-Light Emitting Diode

    Lee Sang-Youl, Lee Eunduk, Moon Ji-Hyung, Choi Byoungjun, Oh Jeong-Tak, Jeong Hwan-Hee, Seong Tae-Yeon, Amano Hiroshi

    IEEE PHOTONICS TECHNOLOGY LETTERS   Vol. 32 ( 17 ) page: 1041 - 1044   2020

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    DOI: 10.1109/LPT.2020.3010820

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  201. Characterization of AlGaN multiple-quantum-wells grown on <i>c</i>-plane AlN/sapphire templates with macro-steps

    Kojima Kazunobu, Nagasawa Yosuke, Hirano Akira, Ippommatsu Masamichi, Sugie Ryuichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    Journal of the Japanese Association for Crystal Growth   Vol. 47 ( 3 ) page: n/a   2020

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    <p>  The microscopic structural and optical characteristics of AlGaN light-emitting diodes (LEDs) fabricated on the AlN templates with dense macrosteps are shown to clarify the origin of their high internal quantum efficiency of radiation (IQE). The cross-sectional transmission electron microscopy observations under the high-angle annular dark field scanning mode and microscopic energy dispersive X-ray spectroscopy revealed that the AlGaN cladding layer under the AlGaN quantum well (QW) layer had a microscopic compositional modulation, which originates from the macrosteps at the AlN template surface. Moreover, Ga-rich portions in the cladding layer behaved as current micropaths, and the micropaths are connected with the carrier localization structure formed in QWs. The in-plane cathodoluminescence (CL) spectroscopy showed a significant inhomogeneity of the CL characteristics. The gentle slopes at the sample surface showed brighter emissions with a lower peak photon energy, confirming the carrier localization. This carrier localization structure in the QWs combined with the current micropaths in the cladding layer can increase the IQE as well as external quantum efficiency of the AlGaN LEDs.</p>

    DOI: 10.19009/jjacg.47-3-04

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  202. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)   Vol. 2020-September   page: 349 - 352   2020

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    DOI: 10.1109/ispsd46842.2020.9170101

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  203. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    GALLIUM NITRIDE MATERIALS AND DEVICES XV   Vol. 11280   page: 1128015   2020

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    DOI: 10.1117/12.2544704

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  204. Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy alpha-particle detection

    Sandupatia A., Arulkurnaran S., Ranjan K., Ng G. I, Murumu P. P., Kennedy J., Deki M., Nitta S., Honda Y., Amano H.

    2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020)     2020

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  205. Development of laser slicing technology for GaN substrates

    KAWAGUCHI Daisuke, TANAKA Atsushi, YUI Toshiki, IGASAKI Yasunori, WANI Yotaro, AMANO Hiroshi

    The Proceedings of Mechanical Engineering Congress, Japan   Vol. 2020 ( 0 ) page: S16306   2020

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    DOI: 10.1299/jsmemecj.2020.s16306

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  206. UV-C Laser Diodes Fabricated on High Quality AlN Substrate

    SASAOKA Chiaki, AMANO Hiroshi

    The Review of Laser Engineering   Vol. 48 ( 8 ) page: 427   2020

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    A UV-C laser diode is a promising light source for processing and machining applications due to photon
    energy near 5 eV. Recently, our group reported a 272-nm laser diode (LD) fabricated on a high-quality
    AlN substrate. Several key technologies are involved to achieve lasing; a low-dislocation-density AlN
    substrate to reduce waveguide optical loss, and distributed polarization doping to increase the hole density
    in the p-side AlGaN cladding of high Al composition. After introducing these key technologies, we
    describe a highly productive on-wafer laser fabrication process in which a facet mirror is prepared by
    dry- and wet-etching and coated with atomic layer deposited DBR (Distributed Bragg Reflector). These
    technologies are expected to open up new UV-C applications and be widely implemented around the
    world.

    DOI: 10.2184/lsj.48.8_427

    CiNii Research

  207. Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe -Type n-Contact and Reflective Bonding Pad

    Kim Jong-Ho, Lee Yong Won, Im Hyeong-Seop, Oh Chan-Hyoung, Shim Jong-In, Kang Daesung, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 1 ) page: 015021   2019.12

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    DOI: 10.1149/2.0462001JSS

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  208. Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

    Nagasawa Yosuke, Sugie Ryuichi, Kojima Kazunobu, Hirano Akira, Ippommatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    JOURNAL OF APPLIED PHYSICS   Vol. 126 ( 21 ) page: 215703   2019.12

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    DOI: 10.1063/1.5125623

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  209. Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

    Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257   page: 1900554   2019.12

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    DOI: 10.1002/pssb.201900554

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  210. A 271.8 nm deep-ultraviolet laser diode for room temperature operation

    Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 12 ) page: 124003   2019.12

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    DOI: 10.7567/1882-0786/ab50e0

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  211. Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

    Dinh Duc V., Hu Nan, Amano Hiroshi, Honda Yoshio, Pristovsek Markus

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 34 ( 12 ) page: 125012   2019.12

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    DOI: 10.1088/1361-6641/ab4d2c

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  212. Low Voltage High-Energy alpha-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

    Sandupatla Abhinay, Arulkumaran Subramaniam, Ranjan Kumud, Ng Geok Ing, Murmu Peter P., Kennedy John, Nitta Shugo, Honda Yoshio, Deki Manato, Amano Hiroshi

    SENSORS   Vol. 19 ( 23 ) page: 5107   2019.12

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    DOI: 10.3390/s19235107

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  213. Improvement in the Reliability of AlGaInP-Based Light-Emitting Diode Package Using Optimal Silicone and Leadframe Structure

    Kim Ho-Young, Lee Jong Woo, Moon Young Min, Oh Jeong Tak, Jeong Hwan-Hee, Song June-O, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 9 ( 1 ) page: 015014   2019.11

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    DOI: 10.1149/2.0332001JSS

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  214. Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

    Duc V Dinh, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    SCIENTIFIC REPORTS   Vol. 9   page: 15802   2019.11

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    DOI: 10.1038/s41598-019-52067-y

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  215. Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application

    Kang Daesung, Oh Jeong-Tak, Song June-O, Seong Tae-Yeon, Kneissl Michael, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 10 ) page: 102016   2019.10

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    DOI: 10.7567/1882-0786/ab45d1

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  216. V-shaped dislocations in a GaN epitaxial layer on GaN substrate

    Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

    AIP ADVANCES   Vol. 9 ( 9 ) page: 095002   2019.9

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    DOI: 10.1063/1.5114866

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  217. Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

    Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

    MICROELECTRONICS RELIABILITY   Vol. 100   page: 113418   2019.9

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    DOI: 10.1016/j.microrel.2019.113418

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  218. Via-Hole-Type Flip-Chip Packaging to Improve the Thermal Characteristics and Reliability of Blue Light Emitting Diodes

    Kim Ho Young, Lim Chang Man, Kim Ki Seok, Oh Jeong Tak, Jeong Hwan-Hee, Song June-O, Seong Tae-Yeon, Amano Hiroshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   Vol. 8 ( 9 ) page: Q165 - Q170   2019.8

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    DOI: 10.1149/2.0171909jss

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  219. Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes

    Kim Dae-Hyun, Park Young Soo, Kang Daesung, Kim Kyoung-Kook, Seong Tae-Yeon, Amano Hiroshi

    JOURNAL OF ALLOYS AND COMPOUNDS   Vol. 796   page: 146-152   2019.8

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    DOI: 10.1016/j.jallcom.2019.05.070

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  220. Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

    Sarzynski Marcin, Grzanka Ewa, Grzanka Szymon, Targowski Grzegorz, Czernecki Robert, Reszka Anna, Holy Vaclav, Nitta Shugo, Liu Zhibin, Amano Hiroshi, Leszczynski Mike

    MATERIALS   Vol. 12 ( 16 ) page: 2583   2019.8

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    DOI: 10.3390/ma12162583

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  221. Influence of Temperature-Dependent Substrate Decomposition on Graphene for Separable GaN Growth

    Park Jeong-Hwan, Lee Jun-Yeob, Park Mun-Do, Min Jung-Hong, Lee Je-Sung, Yang Xu, Kang Seokjin, Kim Sang-Jo, Jeong Woo-Lim, Amano Hiroshi, Lee Dong-Seon

    ADVANCED MATERIALS INTERFACES   Vol. 6   page: 1900821   2019.7

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    DOI: 10.1002/admi.201900821

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  222. Fabrication of a GaInN/GaInP/GaInAs/Ge four-junction solar cell using the wafer bonding technology

    Takahashi Kazuya, Shinoda Ryoji, Mitsufuji Syun, Iwaya Motoaki, Kamiyama Satoshi, Takeuchi Tetsuya, Hattori Tomokazu, Akasaki Isamu, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 7 ) page: 072003   2019.7

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    DOI: 10.7567/1347-4065/ab26ad

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  223. Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Torigoe Kazuhisa, Kushimoto Maki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 7 ) page: 075502   2019.7

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    DOI: 10.7567/1347-4065/ab2657

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  224. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

    Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 516   page: 63-66   2019.6

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    DOI: 10.1016/j.jcrysgro.2019.03.025

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  225. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current

    Usami Shigeyoshi, Mayama Norihito, Toda Kazuya, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS LETTERS   Vol. 114 ( 23 ) page: 232105   2019.6

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    DOI: 10.1063/1.5097767

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  226. Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

    Liu Qiang, Fujimoto Naoki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC ) page: SC1055   2019.6

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    DOI: 10.7567/1347-4065/ab124e

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  227. Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming

    Robin Yoann, Hemeret Francois, D'Inca Gillian, Pristovsek Markus, Trassoudaine Agnes, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC ) page: SCCC06   2019.6

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    DOI: 10.7567/1347-4065/ab06ae

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  228. Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors

    Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC ) page: SCCD20   2019.6

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    DOI: 10.7567/1347-4065/ab06b9

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  229. Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC ) page: SCCD25   2019.6

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    DOI: 10.7567/1347-4065/ab106c

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  230. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates

    Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC ) page: SCCB24   2019.6

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    DOI: 10.7567/1347-4065/ab1250

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  231. Controlling the orientations of directional sputtered non- and semi-polar GaN/AlN layers

    Nan Hu, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SC ) page: SC1044   2019.6

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    DOI: 10.7567/1347-4065/ab1252

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  232. Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285nm deep-ultraviolet LEDs grown on AlN templates having macrosteps

    Nagasawa Yosuke, Kojima Kazunobu, Hirano Akira, Ipponmatsu Masamichi, Honda Yoshio, Amano Hiroshi, Akasaki Isamu, Chichibu Shigefusa F.

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 6 ) page: 064009   2019.6

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    DOI: 10.7567/1882-0786/ab21a9

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  233. Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

    Evropeitsev Evgeniy A., Robin Yoann, Shubina Tatiana V., Bae Si-Young, Nitta Shugo, Kirilenko Demid A., Davydov Valery Y., Smirnov Alexandr N., Toropov Alexey A., Kushimoto Maki, Ivanov Sergey V., Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 256 ( 6 ) page: 1800648   2019.6

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    DOI: 10.1002/pssb.201800648

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  234. Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 514   page: 13-13   2019.5

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    DOI: 10.1016/j.jcrysgro.2019.02.058

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  235. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

    Nagamatsu Kentaro, Ando Yuto, Kono Tsukasa, Cheong Heajeong, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 512   page: 78-83   2019.4

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    DOI: 10.1016/j.jcrysgro.2019.02.013

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  236. Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE

    Duc V Dinh, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 512   page: 100-104   2019.4

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    DOI: 10.1016/j.jcrysgro.2019.02.020

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  237. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

    Kneissl Michael, Seong Tae-Yeon, Han Jung, Amano Hiroshi

    NATURE PHOTONICS   Vol. 13 ( 4 ) page: 233-244   2019.4

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    DOI: 10.1038/s41566-019-0359-9

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  238. GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

    Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    AIP ADVANCES   Vol. 9 ( 4 ) page: 045007   2019.4

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    DOI: 10.1063/1.5087491

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  239. Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method

    Yamada Jumpei, Usami Shigeyoshi, Ueda Yuki, Honda Yoshio, Amano Hiroshi, Maruyama Takahiro, Naritsuka Shigeya

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 4 ) page: 040904   2019.4

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    DOI: 10.7567/1347-4065/aafe70

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  240. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

    Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 509   page: 50-53   2019.3

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    DOI: 10.1016/j.jcrysgro.2018.12.007

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  241. GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors

    Cai Wei, Yuan Jialei, Ni Shuyu, Shi Zheng, Zhou Weidong, Liu Yuhuai, Wang Yongjin, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 3 ) page: 032004   2019.3

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    DOI: 10.7567/1882-0786/ab023c

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  242. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

    Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru

    MATERIALS   Vol. 12 ( 5 ) page: 689   2019.3

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    DOI: 10.3390/ma12050689

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  243. Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD

    Abhinay S., Arulkumaran S., Ng G.I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.

    2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019     page: 106 - 108   2019.3

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    Effect of drift layer thicknesses (DLT) (2, 15 and 30 μm) in reverse current conduction mechanisms of vertical GaN-on-GaN Schottky Barrier Diodes grown MOCVD has been investigated for the first time. The conduction mechanism is changing from thermionic field emission (TFE) to thermionic emission (TE) when the DLT of GaN increases. The SBDs with DLT of 2 μm and 30 μm exhibit TFE through Poole-Frenkel emission and TE, respectively. However, the SBDs with DLT of 15 μm exhibit both TFE and TE. Activation energy (Ea) of traps was also calculated to be 0.69 eV for 2 μm, 0.38 for 15 μm and 0.4 eV for 30 μm respectively. Ea of 0.69 eV and 0.4 eV could be associated with screw threading dislocations and the presence of Mg in the grown drift layer, respectively.

    DOI: 10.1109/EDTM.2019.8731215

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  244. Electronic structure analysis at threading dislocation and at m-plane surface of nanopipes in GaN thin films

    Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Usami Shigeyoshi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    JSAP Annual Meetings Extended Abstracts   Vol. 2019.1 ( 0 ) page: 3122 - 3122   2019.2

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    DOI: 10.11470/jsapmeeting.2019.1.0_3122

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  245. Morphological study of InGaN on GaN substrate by supersaturation

    Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 508   page: 58-65   2019.2

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    DOI: 10.1016/j.jcrysgro.2018.12.028

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  246. How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire

    Hu Nan, Dinh Duc V., Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 507   page: 205 - 208   2019.2

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    DOI: 10.1016/j.jcrysgro.2018.11.013

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  247. Observation of Dopant Concentration in GaN Semiconductor by High Sensitivity Electron Holography

    Nakano Kiyotaka, Matsumoto Miko, Anada Satoshi, Yamamoto Kazuo, Ishikawa Yukari, Hirayama Tsukasa, Ando Yuto, Ogura Masaya, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    Materia Japan   Vol. 58 ( 2 ) page: 103 - 103   2019.2

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    DOI: 10.2320/materia.58.103

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  248. Pole figure analysis from electron backscatter diffraction-an effective method of evaluating fiber-textured silicon thin films as seed layers for epitaxy

    Hainey Mel Jr., Robin Yoann, Amano Hiroshi, Usami Noritaka

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

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    DOI: 10.7567/1882-0786/aafb26

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  249. Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

    Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 ) page: 026502   2019.2

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    DOI: 10.7567/1882-0786/aafdb9

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  250. Compositional control of homogeneous InGaN nanowires with the In content up to 90%

    Zeghouane Mohammed, Avit Geoffrey, Andre Yamina, Bougerol Catherine, Robin Yoann, Ferret Pierre, Castelluci Dominique, Gil Evelyne, Dubrovskii Vladimir G., Amano Hiroshi, Trassoudaine Agnes

    NANOTECHNOLOGY   Vol. 30 ( 4 ) page: 044001   2019.1

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    DOI: 10.1088/1361-6528/aaec39

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  251. Localization and transient emission properties in InGaN/ GaN quantum wells of different polarities within core- shell nanorods

    Robin Y., Evropeitsev E. A., Shubina T. V., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Eliseyev I. A., Bae S. Y., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

    NANOSCALE   Vol. 11 ( 1 ) page: 193 - 199   2019.1

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    DOI: 10.1039/c8nr05863f

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  252. Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps

    Kojima K., Nagasawa Y., Hirano A., Ippommatsu M., Honda Y., Amano H., Akasaki I., Chichibu S. F.

    APPLIED PHYSICS LETTERS   Vol. 114 ( 1 ) page: 011102   2019.1

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    DOI: 10.1063/1.5063735

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  253. 286 nm monolithic multicomponent system

    Yuan Jialei, Jiang Yan, Shi Zheng, Gao Xumin, Wang Yongjin, Sun Xiaojuan, Li Dabing, Liu Yuhuai, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 1 ) page: 010909   2019.1

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    DOI: 10.7567/1347-4065/aaf3aa

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  254. Electronic structure analysis of core structures of threading dislocations in GaN

    Nakano Takashi, Chokawa Kenta, Araidai Masaaki, Shiraishi Kenji, Oshiyama Atsushi, Kusaba Akira, Kangawa Yoshihiro, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)     page: .   2019

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    DOI: 10.1109/iciprm.2019.8819270

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  255. Light-Emitting Diodes Materials, Processes, Devices and Applications Foreword

    Amano, H

    LIGHT-EMITTING DIODES: MATERIALS, PROCESSES, DEVICES AND APPLICATIONS   Vol. 4   page: V - V   2019

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  256. MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire

    Dinh Duc V., Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 502   page: 14-18   2018.11

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    DOI: 10.1016/j.jcrysgro.2018.09.001

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  257. What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

    Robin Y., Pristovsek M., Amano H., Oehler F., Oliver R. A., Humphreys C. J.

    JOURNAL OF APPLIED PHYSICS   Vol. 124 ( 18 ) page: 183102   2018.11

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    DOI: 10.1063/1.5047240

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  258. Simultaneous Growth of Various InGaN/GaN Core-Shell Microstructures for Color Tunable Device Applications

    Robin Yoann, Liao Yaqiang, Pristovsek Markus, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 215 ( 21 ) page: 1800361   2018.11

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    DOI: 10.1002/pssa.201800361

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  259. Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method

    Kashima Masahiro, Sato Daiki, Koizumi Atsushi, Nishitani Tomohiro, Honda Yoshio, Amano Hiroshi, Iijima Hokuto, Meguro Takashi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 36 ( 6 ) page: 06JK02   2018.11

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    DOI: 10.1116/1.5048061

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  260. Full-duplex light communication with a monolithic multicomponent system

    Wang Yongjin, Wang Xin, Zhu Bingcheng, Shi Zheng, Yuan Jialei, Gao Xumin, Liu Yuhuai, Sun Xiaojuan, Li Dabing, Amano Hiroshi

    LIGHT-SCIENCE & APPLICATIONS   Vol. 7   page: 83   2018.10

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    DOI: 10.1038/s41377-018-0083-0

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  261. Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

    Avit Geoffrey, Zeghouane Mohammed, Andre Yamina, Castelluci Dominique, Gil Evelyne, Bae Si-Young, Amano Hiroshi, Trassoudaine Agnes

    CRYSTENGCOMM   Vol. 20 ( 40 ) page: 6207 - 6213   2018.10

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    DOI: 10.1039/c8ce01177j

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  262. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

    Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 10 ) page: 105501   2018.10

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    DOI: 10.7567/JJAP.57.105501

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  263. High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire

    Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus

    JOURNAL OF CRYSTAL GROWTH   Vol. 498   page: 377-380   2018.9

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    DOI: 10.1016/j.jcrysgro.2018.07.015

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  264. Advantages of GaN and Related Materials over Si and Issues to be Solved

    AMANO Hiroshi

    Vacuum and Surface Science   Vol. 61 ( 9 ) page: 565 - 567   2018.9

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    DOI: 10.1380/vss.61.565

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  265. Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

    Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Murakami Satoshi, Kushimoto Maki, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 9 ) page: 091001   2018.9

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    DOI: 10.7567/JJAP.57.091001

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  266. Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

    Barry Ousmane I, Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 12 ( 8 ) page: 1800124   2018.8

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    DOI: 10.1002/pssr.201800124

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  267. Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga2O3 passivated by sputtering

    Ueoka Yoshihiro, Deki Meneto, Honda Yoshio, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 7 ) page: 070302   2018.7

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    DOI: 10.7567/JJAP.57.070302

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  268. Study on the Main-Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN-Based DUV-LEDs

    Kiho Yamada, Yosuke Nagasawa, Shoko Nagai, Akira Hirano, Masamichi Ippommatsu, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki

    Physica Status Solidi (A) Applications and Materials Science   Vol. 215 ( 10 ) page: 1700525   2018.5

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    The main chain structure of optically isotropic amorphous fluorine resin for encapsulating AlGaN-based deep-ultraviolet LEDs (λ &lt
    300 nm) is studied. One type of amorphous fluorine resin has a five-membered ring with a single oxygen atom and the other has that one with two oxygen atoms. Reliability testing is performed using AlGaN-based LEDs of 262 and 289 nm. For the resin with two oxygen atoms in the ring, visible damage to the electrode and significantly increased leakage current are considered to been caused by the photolysis of the ring induced by irradiation with deep-ultraviolet light. In contrast, electrode damage and increased leakage are not observed in the case of the resin with the single-oxygen ring.

    DOI: 10.1002/pssa.201700525

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  269. Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

    Robin Y., Bae S. Y., Shubina T. V., Pristovsek M., Evropeitsev E. A., Kirilenko D. A., Davydov V. Yu., Smirnov A. N., Toropov A. A., Jmerik V. N., Kushimoto M., Nitta S., Ivanov S. V., Amano H.

    SCIENTIFIC REPORTS   Vol. 8   page: 7311   2018.5

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    DOI: 10.1038/s41598-018-25473-x

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  270. m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates

    Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    Physica Status Solidi (A) Applications and Materials Science   Vol. 215 ( 9 ) page: 1700645   2018.5

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    In this study, GaN m-plane Schottky barrier diodes are fabricated by metalorganic vapor-phase epitaxy (MOVPE) on several off-angle gallium nitride (GaN) substrates, and the off-cut angle dependence of impurity incorporation is investigated. We show that the MOVPE layer on the substrate inclined 5° toward the [000–1] direction has extremely low impurity incorporation. These results provide important suggestions for the fabrication of m-plane power devices.

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  271. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

    Xu Yang, Shugo Nitta, Markus Pristovsek, Yuhuai Liu, Kentaro Nagamatsu, Maki Kushimoto, Yoshio Honda, Hiroshi Amano

    Applied Physics Express   Vol. 11 ( 5 ) page: 051002   2018.5

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    Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

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  272. Transferrable monolithic multicomponent system for near-ultraviolet optoelectronics

    Chuan Qin, Xumin Gao, Jialei Yuan, Zheng Shi, Yuan Jiang, Yuhuai Liu, Yongjin Wang, Hiroshi Amano

    Applied Physics Express   Vol. 11 ( 5 ) page: 051201   2018.5

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    A monolithic near-ultraviolet multicomponent system is implemented on a 0.8-mm-diameter suspended membrane by integrating a transmitter, waveguide, and receiver into a single chip. Two identical InGaN/Al0.10Ga0.90N multiple-quantum well (MQW) diodes are fabricated using the same process flow, which separately function as a transmitter and receiver. There is a spectral overlap between the emission and detection spectra of the MQW diodes. Therefore, the receiver can respond to changes in the emission of the transmitter. The multicomponent system is mechanically transferred from silicon, and the wire-bonded transmitter on glass experimentally demonstrates spatial light transmission at 200 Mbps using non-return-to-zero on–off keying modulation.

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  273. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Sugawara, Yong-Zhao Yao, Yukari Ishikawa

    APPLIED PHYSICS LETTERS   Vol. 112 ( 18 ) page: 182106   2018.4

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    Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that lc pure screw dislocations are related to the reverse leakage in vertical p-n diodes. Published by AIP Publishing.

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  274. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures

    Oh Jeong-Tak, Lee Sang-Youl, Moon Yong-Tae, Moon Ji Hyung, Park Sunwoo, Hong Ki Yong, Song Ki Young, Oh Chan-Hyoung, Shim Jong-In, Jeong Hwan-Hee, Song June-O, Amano Hiroshi, Seong Tae-Yeon

    OPTICS EXPRESS   Vol. 26 ( 9 ) page: 11194-11200   2018.4

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    DOI: 10.1364/OE.26.011194

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  275. The 2018 GaN power electronics roadmap

    H. Amano, Y. Baines, E. Beam, Matteo Borga, T. Bouchet, Paul R Chalker, M. Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L. Di Cioccio, Bernd Eckardt, Takashi Egawa, P. Fay, Joseph J Freedsman, L. Guido, Oliver Häberlen, Geoff Haynes, Thomas Heckel, Dilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng Jiang, H. Kawai, Dan Kinzer, Martin Kuball, Ashwani Kumar, Kean Boon Lee, Xu Li, Denis Marcon, Martin März, R. McCarthy, Gaudenzio Meneghesso, Matteo Meneghini, E. Morvan, A. Nakajima, E. M.S. Narayanan, Stephen Oliver, Tomás Palacios, Daniel Piedra, M. Plissonnier, R. Reddy, Min Sun, Iain Thayne, A. Torres, Nicola Trivellin, V. Unni, Michael J Uren, Marleen Van Hove, David J Wallis, J. Wang, J. Xie, S. Yagi, Shu Yang, C. Youtsey, Ruiyang Yu, Enrico Zanoni, Stefan Zeltner, Yuhao Zhang

    Journal of Physics D: Applied Physics   Vol. 51 ( 16 ) page: 163001   2018.4

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    Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

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  276. Analysis of Cesium Layer on InGaN by Temperature Programmed Desorption Method

    Kashima Masahiro, Daiki Sato, Atsushi Koizumi, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano, Hokuto Iijima, Takashi Meguro

    JSAP Annual Meetings Extended Abstracts   Vol. 2018.1 ( 0 ) page: 1670 - 1670   2018.3

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    DOI: 10.11470/jsapmeeting.2018.1.0_1670

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  277. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

    Xu Yang, Shugo Nitta, Kentaro Nagamatsu, Si-Young Bae, Ho-Jun Lee, Yuhuai Liu, Markus Pristovsek, Yoshio Honda, Hiroshi Amano

    JOURNAL OF CRYSTAL GROWTH   Vol. 482 ( 15 ) page: 1 - 8   2018.1

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    Hexagonal boron nitride (h-BN) was directly grown on sapphire substrate using alternating ammonia (NH3) and triethylboron (TEB) supply (pulsed mode) in metalorganic vapor phase epitaxy. The best condition is when just enough NH3 is supplied to fully convert the TEB within one cycle. Excess NH3 caused islands on h-BN film surface while a lack of NH3 does not form h-BN at all. The epitaxial relationship between grown h-BN layer and c-plane sapphire was confirmed to be [0001](h-BN)||[0001](sapphire) and [10-10](h-BN)||[11-20](sapphire). It is known that, compared to AlN, BN requires higher V/III ratios for good crystallinity, which due to severe gas-phase reactions is difficult to achieve using continuous supply. Thus using pulsed mode the FWHM of the symmetric (0002) diffraction was almost halved and the growth rate was several times faster. (C) 2017 Elsevier B.V. All rights reserved.

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  278. Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes

    Yates Luke, Pavlidis Georges, Graham Samuel, Usami Shigeyoshi, Nagamatsu Kentaro, Honda Yoshio, Amano Hiroshi

    PROCEEDINGS OF THE 17TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2018)     page: 831 - 837   2018

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  279. Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN

    Nakano Takashi, Araidai Masaaki, Shiraishi Kenji, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi

    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8   Vol. 86 ( 12 ) page: 41 - 49   2018

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    DOI: 10.1149/08612.0041ecst

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  280. DFT modeling of carbon incorporation in GaN(0001) and GaN(000(1)over-bar) metalorganic vapor phase epitaxy Reviewed

    Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano

    APPLIED PHYSICS LETTERS   Vol. 111   page: 141602/1-5   2017.10

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    The carbon incorporation mechanism in GaN(0001) and GaN(000 (1) over bar) during MOVPE was investigated using density functional theory (DFT) calculations. The results confirm that the crucial factors for carbon incorporation are Fermi level pinning and accompanying surface band bending. In addition, the lattice symmetry has a strong dependence on the stability of carbon in a few subsurface layers, which results from interactions between the impurities and surface states. It was shown that these effects are responsible for facilitating or hindering the incorporation of impurities and dopants. The influence of diluent gas species (hydrogen or nitrogen) on carbon incorporation was discussed.

    DOI: 10.1063/1.4991608

  281. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

    Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano

    APPLIED PHYSICS LETTERS   Vol. 111   page: 122102/1-5   2017.9

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    Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.

    DOI: 10.1063/1.4994627

  282. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations Reviewed

    Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, and Hiroshi Amano

    Applied Physics Express   Vol. 10   page: 082101/1-4   2017.8

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    DOI: 10.7567/APEX.10.082101

  283. Low cost high voltage GaN polarization superjunction field effect transistors

    H. Kawai, S. Yagi, S. Hirata, F. Nakamura, T. Saito, Y. Kamiyama, M. Yamamoto, H. Amano, V. Unni, E. M. S. Narayanan

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 ) page: 1600834/1-10   2017.8

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    A comprehensive overview of the novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept, and a cost-effective approach towards manufacturing these high performance devices are presented. Current challenges impeding wider adoption of GaN power switching transistors in applications, and the latest results of the scaled-up PSJ-FETs from POWDEC KK, are also discussed. The article also presents hard-switching characteristics of 400-800V boost converter, constructed using a PSJ-FET grown on sapphire substrate, and the future direction of GaN power semiconductor technology based on monolithic integration for advanced power electronics.

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  284. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE Reviewed

    Atsushi Tanaka, Ousmane1 Barry, Kentaro Nagamatsu, Junya Matsushita, Manato Deki, Yuto Ando, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi A   Vol. 214 ( 8 ) page: 1600829/1-5   2017.8

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    In this study, GaN m-plane Schottky barrier diodes fabricated with a metalorganic vapor-phase epitaxy on a GaN substrate were investigated using emission microscope, photoluminescence, and cathodoluminescence. In addition, facet dependence of leakage current under reverse-biased condition was observed. We showed that the leakage-current distribution was caused by the facet dependence of the carrier concentration and oxygen concentration. These results can provide important suggestions for the fabrication of m-plane devices. (a) four-faceted hillocks on m-plane GaN MOVPE sample, facet dependence of (b) leakage current and (c) PL peak intensity of the m-plane GaN Schottky barrier diode.

    DOI: 10.1002/pssa.201600829

  285. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes Invited Reviewed

    Shigeyoshi Usami, Ryosuke Miyagoshi, Atsushi Tanaka, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi A   Vol. 214 ( 8 ) page: 1600837/1-5   2017.8

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    We investigate the influence of crystal defects on p-type GaN grown by metalorganic vapor phase epitaxy. Sets of p-type GaN films were grown on sapphire substrates and on free-standing GaN (F-GaN) substrates simultaneously using various Et-Cp2Mg flow rates. Although there is a difference of two orders of magnitude between the threading dislocation densities of p-type GaN grown on sapphire and F-GaN substrates, there is no significant difference in hole concentration. However, there are problems with the surface morphology of p-type GaN grown on sapphire. The deterioration of the surface was caused by the difference in nanopipe density. The electrical properties of a p-n junction diode formed on sapphire with a high density of nanopipes were observed using emission microscopy under both forward- and reverse-bias conditions. Our results demonstrate that the nanopipes are electrically inactive, and that other types of threading dislocation have more influence on the current-voltage characteristics.

    DOI: 10.1002/pssb.201600722

  286. Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants Reviewed

    Si-Young Bae, Kaddour Lekhal, Ho-Jun Lee, Jung-Wook Min, Dong-Seon Lee, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi B   Vol. 254 ( 8 ) page: 1600722/1-7   2017.8

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    Injecting current with a uniform carrier concentration is important for applications with three-dimensional architectures such as vertical power devices or displays. In III-nitride nanostructures, dopants not only incorporate differently depending on the surface orientation but can also seriously affect the kinetic equilibrium shapes of the nanorods. Herein, we report selective-area growth of doped GaN nanorods grown by pulsed-mode metalorganic chemical vapor deposition. Two dopants, Si and Mg, were employed as donor and acceptor atoms, respectively, for a mono-doping approach. Furthermore, a mixed flow of Si and Mg was supplied for a co-doping approach. We compared the morphological effects and growth rates of each doped GaN nanorod array. Then, we proposed appropriate growth mechanisms for the doped GaN nanorods on the basis of our structural characterizations. These results might extend the morphological functionality of GaN nanorods by including doping and may also provide an appropriate foundation for the design of nanostructure-based electronic or photonic devices.

    DOI: 10.1002/pssb.201600722

  287. Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system Reviewed

    Kentaro Nagamatsu, Shugo Nitta, Zheng Ye, Hirofumi Nagao, Shinichi Miki, Yoshio Honda, and Hiroshi Amano

    Phys. Status Solidi B   Vol. 254 ( 8 ) page: 1600737/1-4   2017.8

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  288. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

    Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 )   2017.8

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    We investigate the influence of crystal defects on p-type GaN grown by metalorganic vapor phase epitaxy. Sets of p-type GaN films were grown on sapphire substrates and on free-standing GaN (F-GaN) substrates simultaneously using various Et-Cp2Mg flow rates. Although there is a difference of two orders of magnitude between the threading dislocation densities of p-type GaN grown on sapphire and F-GaN substrates, there is no significant difference in hole concentration. However, there are problems with the surface morphology of p-type GaN grown on sapphire. The deterioration of the surface was caused by the difference in nanopipe density. The electrical properties of a p–n junction diode formed on sapphire with a high density of nanopipes were observed using emission microscopy under both forward- and reverse-bias conditions. Our results demonstrate that the nanopipes are electrically inactive, and that other types of threading dislocation have more influence on the current–voltage characteristics.

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  289. Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity Reviewed

    Guangxu Ju, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    Applied Physics Letters   Vol. 110 ( 26 ) page: 262105/1-5   2017.6

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    DOI: 10.1063/1.4990687

  290. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer Reviewed

    Zheng Sun, Peifeng Song, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   Vol. 468   page: 866-869   2017.6

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    DOI: 10.1016/j.jcrysgro.2017.01.31

  291. Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer Reviewed

    S.-Y.Bae, K. Lekhal, H.-J.Lee, T.Mitsunari, J.-W.Min, D.-S.Leed, M.Kushimoto, Y.Honda, H.Amano

    Journal of Crystal Growth   Vol. 468   page: 110-113   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.10.032

  292. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer Reviewed

    Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Akira Tamura, Takafumi Suzuki, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano

    Journal of Crystal Growth   Vol. 468   page: 547-551   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.11.116

  293. Effect of V/III ratio on the surface morphology and electrical properties of m–plane ( 101¯0 ) GaN homoepitaxial layers Reviewed

      Vol. 468   page: 552-556   2017.6

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    We have investigated the effect of V/III ratio on the surface morphology, impurity concentration and electrical properties of m–plane (101¯0) Gallium Nitride (GaN) homoepitaxial layers. Four-sided pyramidal hillocks are observed on the nominally on-axis m–plane GaN films. Hillocks sizes relatively increase by increasing the V/III ratio. All facets of pyramidal hillocks exhibit well-defined step-terrace features. Secondary ion mass spectrometry depth profiles reveal that carbon impurities decrease by increasing the V/III ratio while the lowest oxygen content is found at an optimized V/III ratio of 900. Vertical Schottky barrier diodes fabricated on the m–GaN samples were characterized. Low leakage current densities of the order of 10−10 A/cm2 at −5 V are obtained at the optimum V/III ratio. Oxygen impurities and screw-component dislocations around hillocks are found to have more detrimental impact on the leakage current mechanism.

    DOI: 10.1016/j.jcrysgro.2016.12.012

  294. Annealing effect on threading dislocations in a GaN grown on Si substrate Reviewed

      Vol. 468   page: 835-838   2017.6

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    Effect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a (111)Si substrate was investigated by photoluminescence (PL) and transmission electron microscopy (TEM) analyses. The PL spectra suggested that the density of gallium vacancy is not changed by the heat treatment up to 700 °C. In the TEM specimen, we had dislocation half loops generated by off-axis propagation of the threading dislocation. We found that the half-loop of c-type dislocation shrinks/moves by a repetitive RTA at 600–700 °C. In contrast, we could find no remarkable changes in the a-type or a+c-type dislocations.

    DOI: 10.1016/j.jcrysgro.2017.01.001

  295. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer

    Sun Zheng, Song Peifeng, Nitta Shugo, Honda Yoshio, Amano Hiroshi

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 866 - 869   2017.6

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    A-plane GaN was attempted to be grown on (11-20) 4H-SiC bulk substrate without using a traditional thick buffer layer. By inducing TMAl treatment before the GaN growth step and using both a low pressure and V/III ratio, the interlayer thickness of the a-plane GaN/SiC was reduced to 1.7+0.5 nm. The ultrathin interlayer was observed to be either AlN or AlGaN with a low Ga composition. This study is aimed to contribute to the understanding of GaN growth on the sidewalls of c-plane trench structure SiC. The ultrathin growth technique is also hoped to be applied to the fabrication of GaN-based vertical structure nonpolar optical or electrical devices.

    DOI: 10.1016/j.jcrysgro.2017.01.031

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  296. Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output Reviewed

    Michiko Kaneda, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   Vol. 56   page: 061002   2017.5

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    DOI: 10.7567/JJAP.56.061002

  297. III-nitride core-shell nanorod array on quartz substrates

    Si-Young Bae, Jung-Wook Min, Hyeong-Yong Hwang, Kaddour Lekhal, Ho-Jun Lee, Young-Dahl Jho, Dong-Seon Lee, Yong-Tak Lee, Nobuyuki Ikarashi, Yoshio Honda, Hiroshi Amano

    SCIENTIFIC REPORTS   Vol. 7   page: 45345   2017.3

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    We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal-organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core-shell nanorods were then investigated. The nanorods were highly crystalline and the core-shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates.

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  298. Investigation of reduction of light absorption at p-side toward UV emitting devices

    Yasuda Toshiki, Kuwabara Natsuko, Takeuchi Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

    JSAP Annual Meetings Extended Abstracts   Vol. 2017.1 ( 0 ) page: 3400 - 3400   2017.3

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    DOI: 10.11470/jsapmeeting.2017.1.0_3400

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  299. Effect of thermal treatment on the quantu efficiency of NEA-InGaN photocatode

    Kashima Masahiro, Iijima Hokuto, Nishitani Tomohiro, Sato Daiki, Honda Yoshio, Amano Hiroshi, Meguro Takashi

    JSAP Annual Meetings Extended Abstracts   Vol. 2017.1 ( 0 ) page: 1554 - 1554   2017.3

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    DOI: 10.11470/jsapmeeting.2017.1.0_1554

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  300. A Study on the Photo-resistance and the Decomposition Mechanism of Perfluoro Resins Applied to Encapsulating Deep Ultra Violet LEDs

    Nagasawa Yosuke, Yamada Kiho, Nagai Shouko, Hirano Akira, Ipponmatsu Masamichi, Aosaki Ko, Honda Yoshio, Amano Hiroshi, Akasaki Isamu

    JSAP Annual Meetings Extended Abstracts   Vol. 2017.1 ( 0 ) page: 1136 - 1136   2017.3

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    DOI: 10.11470/jsapmeeting.2017.1.0_1136

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  301. Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template

    Yasuda Toshiki, Takeuchi Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

    APPLIED PHYSICS EXPRESS   Vol. 10 ( 2 )   2017.2

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    We investigated polarization doping for hole generation in abrupt and graded GaN/Al0.7Ga0.3N interfaces on Al0.99Ga0.01N templates. The abrupt interface exhibited hole generation, whereas the graded interface exhibited electron generation. In the graded AlxGa1%xN (x = 0.65-0), a graded part with an AlN mole fraction ranging from 0.2 to 0 showed a large relaxation. Theoretical estimation revealed that this part contained positive polarization charges, accumulating electrons. Via Mg doping in the graded AlGaN layer, we obtained a high hole concentration of 3 ' 1013cm%2. These results indicate that understanding the relaxation conditions in the graded layer is indispensable for polarization doping.

    DOI: 10.7567/APEX.10.025502

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  302. Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template Reviewed

    Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Applied Physics Express   Vol. 10   page: 025502   2017.1

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    DOI: https://doi.org/10.4567/APEX.10.025502

  303. From the dawn of gan-based light-emitting devices to the present day

    Amano H.

    Handbook of Solid-State Lighting and LEDs     page: 3-12   2017.1

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    DOI: 10.1201/9781315151595

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  304. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 degrees C by metalorganic vapor phase epitaxy

    Katsuno Shota, Yasuda Toshiki, Hagiwara Koudai, Koide Norikatsu, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Akasaki Isamu, Amano Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

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    DOI: 10.7567/JJAP.56.015504

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  305. Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching Reviewed

    Koji Matsumoto, Toshiaki Ono, Yoshio Honda, Tetsuya Yamamoto, Shigeyoshi Usami, Maki Kushimoto, Satoshi Murakami, and Hiroshi Amano

    Physica Status Solidi b   Vol. 253   page: 1700387(1-7)   2017

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    A gallium nitride (GaN) epitaxial layer with a low density of threading dislocations is successfully grown on a silicon substrate by using in situ gas
    etching. Silicon nitride (SiNx) film is used as a mask, and ammonia is intermittently supplied in hydrogen ambient during the etching. After etching,
    high-density deep pits appeared on the surface of a GaN template layer and corresponded to the threading dislocations in the layer. In this novel method,
    before growing an additional GaN layer on the template GaN layer, a second SiNx layer is deposited after the etching process, and this layer prevents GaN nuclei from growing on the upper side-walls of the pits. By using this method, the density of threading dislocations of the GaN surface is reduced to 6.7E7 cm2. This method is cost effective, completing all the necessary processes in one growth run without taking samples out from a metalorganic chemical vapor deposition (MOCVD) reactor.

    DOI: 10.1002/pssb.201700387

  306. Development of Sustainable Smart Society based on Transformative Electronics

    Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.

    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     page: .   2017

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    Web of Science

  307. Progress and prospect of growth of wide-band-gap group III nitrides

    Hiroshi Amano

    Topics in Applied Physics   Vol. 133   page: 1 - 9   2017

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    GaAs, InP, and their related compound semiconductors can be grown on native substrates, whereas such growth was not possible for group III nitride semiconductors in the 1970s and 1980s. Despite this drawback, researchers were able to use novel functions of group III nitride semiconductors by growing their thin films on nonnative substrates such as sapphire SiC and Si.

    DOI: 10.1007/978-981-10-3755-9_1

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  308. From the Dawn of GaN-Based Light-Emitting Devices to the Present Day

    Amano Hiroshi

    HANDBOOK OF SOLID-STATE LIGHTING AND LEDS     page: 3 - 11   2017

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  309. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy Reviewed

    Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 56   page: 015504   2016.12

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    DOI: https://doi.org/10.7567/JJAP.56.015504

  310. Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer Reviewed

    Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Tadashi Mitsunaria, Akira Tamura, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   Vol. 454   page: 114-120   2016.11

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    DOI: https://doi.org/10.1016/j.jcrysgro.2016.09.004

  311. Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE Reviewed

    Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   Vol. 447   page: 55-61   2016.8

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    The selective area growth (SAG) of GaN was implemented on patterned GaN/sapphire templates by hydride vapor phase epitaxy (HVPE) to fabricate regular arrays of Ga-polar GaN microrods. The control of growth parameters such as H2/N2 carrier gas ratio, growth temperature, and absolute NH3/HCl gas flow resulted in changes in the growth morphology.

    DOI: 10.1016/j.jcrysgro.2016.05.008

  312. Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study Reviewed

    Shoko Nagai, Kiho Yamada, Akira Hirano, Masamichi Ippommatsu, Masahiro Ito, Naoki Morishima, Ko Aosaki, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   Vol. 55   page: 082101/1-7   2016.8

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    DOI: http://doi.org/10.7567/JJAP.55.082101

  313. Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy Reviewed

    Tran Thien Duc, Galia Pozina, Hiroshi Amano, Bo Monemar, Erik Janz´en, and Carl Hemmingsson

    PHYSICAL REVIEW   Vol. B94   page: 045206/1-8   2016.7

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    Deep levels in Mg-doped GaN grown by metal organic chemical vapor deposition, undoped GaN grown by MOCVD, and halide vapor phase epitaxy-grown GaN have been studied using deep level transient spectroscopy and minority charge carrier transient spectroscopy.

    DOI: 10.1103/PhysRevB.94.045206

  314. Study of radiation detection properties of GaN pn diode Reviewed

    Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano

    Japanese Journal of Applied Physics   Vol. 55   page: 05FJ02/1-3   2016.5

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    Recently, GaN, which has remarkable properties as a material for optical devices and high power electron devices, has also attracted attention as a material for radiation detectors. We previously suggested the use of BGaN as a neutron detector material. However, the radiation detection characteristics of GaN itself are not yet adequately understood. For realizing a BGaN neutron detector, the understanding of the radiation detection characteristics of GaN, which is a base material of the neutron detector, is important. In this study, we evaluated the radiation detection characteristics of GaN. We performed I V and energy spectrum measurements under alpha ray, gamma ray, and thermal neutron irradiations to characterize the radiation detection characteristics of a GaN diode. The obtained results indicate that GaN is an effective material for our proposed new BGaN-based neutron detector.

  315. Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction Reviewed

    Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction   Vol. 55 ( 5S ) page: 05FL03/1-5   2016.5

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  316. Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity Reviewed

    Daiki Sato, Tomohiro Nishitani, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 55 ( 5S ) page: 05FH05/1-4   2016.5

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  317. Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode Reviewed

    Byung Oh Jung, Si-Young Bae, Seunga Lee, Sang Yun Kim, Jeong Yong Lee, Yoshio Honda and Hiroshi Amano

    Nanoscale Research Letters   Vol. 11   2016.4

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    We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.

    DOI: 10.1186/s11671-016-1441-6

  318. Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer Reviewed

    Zheng Sun, Kentaro Nagamatsu, Marc Olsson, Peifeng Song, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics,   Vol. 55 ( 5S ) page: 05FB06/1-5   2016.4

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  319. Growth of semipolar (1-101) high-indium-content InGaN quantum well using InGaN tilting layer on Si(001) Reviewed

    Maki Kushimoto, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 55 ( 5S ) page: 05FA10/1-4   2016.4

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  320. Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering Reviewed

    Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Tadashi Mitsunari, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 55 ( 5S ) page: 05FD03/1-4   2016.4

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    Using an in situ laser absorption and scattering method, the surface roughness and incorporation of In in InGaN layers grown by metal organic vapor-phase epitaxy (MOVPE) were monitored.

  321. Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials

    Hiroshi Amano

    Progress in Crystal Growth and Characterization of Materials   Vol. 62   page: 126–135   2016.4

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    DOI: https://doi.org/10.1016/j.pcrysgrow.2016.04.006

  322. Structural and optical study of core–shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum Reviewed

      Vol. 55 ( 5S ) page: 05FG03/1-8   2016.4

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    We report on the material and optical properties of core–shell InGaN layers grown on GaN nanorod arrays. The core–shell InGaN layers were well grown on polarization-reduced surfaces such as semipolar pyramids and nonpolar sidewalls. In addition, to compensate the biaxial strain between GaN and InGaN layers, we grew interlayers underneath a thick InGaN layer. Here, the interlayers were composed of multiple superlattice structures. We could observe that the indium composition of core–shell InGaN structures increased with the number of interlayers. This indicates that the absorption energy band of InGaN alloys can be better matched to the spectral irradiance of the solar spectrum in nature. We also implemented a simulation of Ga-polar and nonpolar InGaN-based solar cells based on the indium composition obtained from the experiments. The result showed that nonpolar InGaN solar cells had a much higher efficiency than Ga-polar InGaN solar cells with the same thickness of the absorption layer.

  323. Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy Reviewed

    Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 55   page: 05FF03/1-5   2016.3

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  324. Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy Reviewed

    Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano and Koichi Kakimoto

    Japanese Journal of Applied Physics   Vol. 55 ( 5S ) page: 05FM01/1-4   2016.2

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  325. Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations Reviewed

    Seunga Lee, Yoshio Honda, Hiroshi Amano, Jongjin Jang and Okhyun Nam

    Japanese Journal of Applied Physics Rapid Communications   Vol. 55 ( 3 ) page: 030306/1-4   2016.2

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    Using a SiN insertion layer to reduce dislocations, enhanced photovoltaic properties could be obtained in pin InGaN GaN heterojunction solar cell. To investigate the influence of the dislocations on the photovoltaic behaviors, a sample grown without SiN insertion layer was identically prepared for comparison. From optical properties measurements, the reduction in the number of non-radiative centers and a stronger In localization effect was shown in the sample with SiN insertion layer. However, the quantum confined stark effect was almost negligible in both the samples.

  326. Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells Reviewed

    Lee, Seunga; Honda, Yoshio; Amano, Hiroshi

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 49 ( 2 ) page: 025103   2016.1

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    To understand the effect of piezoelectric fields on carrier dynamics, we numerically investigated a simple p-GaN/i-InxGa1-xN/n-GaN solar cell structure. A reliable simulation model was obtained by comparing the experimental and simulated results in advance.

  327. Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition Reviewed

    Si-Young Bae, Byung Oh Jung, Kaddour Lekhal, Sang Yun Kim, Jeong Yong Lee, Dong-Seon Lee, Manato Deki, Yoshio Honda and Hiroshi Amano

    CrystEngComm   Vol. 18   page: 1505-1514   2016.1

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    . Unlike the thick and high (or middle)-quality GaN templates normally used, nanorod growth was performed on an ultrathin and low-quality AlN/Si platform. Using kinetically controlled growth conditions and a patterning process, exceptionally long GaN nanorods were achieved with high geometric precision.

    DOI: 10.1039/C5CE02056E

  328. The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer Reviewed

    Zheng Sun, Akio Ohta, Seiichi Miyazaki, Kentaro Nagamatsu, Hojun Lee, Marc Olsson, Zheng Ye, Manato Deki, Yoshio Honda, and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 55   page: 010303/1-3   2016.1

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    Previously, we reported a growth method by MOVPE using a single two-dimensional growth step, resulting in 1.2-micron thick crack-free GaN directly grown on 6H-SiC substrate. The introduction of Al-treatment prior to the standard GaN growth step resulted in improved surface wetting of gallium on the SiC substrate.

  329. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation Invited Reviewed

    Hiroshi Amano

    Rev. Mod. Phys.   Vol. 87 ( 4 ) page: 1133-1138   2015.12

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    This is a personal history of one of the Japanese researchers engaged in developing a method for
    growing GaN on a sapphire substrate, paving the way for the realization of smart television and
    display systems using blue LEDs. The most important work was done in the mid to late 1980s. The
    background to the author's work and the process by which the technology enabling the growth of
    GaN and the realization of p-type GaN was established are reviewed.

  330. Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer Reviewed

    Tadashi Mitsunari, Ho Jun Lee, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   Vol. 431   page: 60-63   2015.12

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    We obtained single-crystalline semipolar (10View the MathML source1¯3)GaN on a nominal Si(001) substrate with sputtered AlN using the directional feature of sputtering.

    DOI: 10.1016/j.jcrysgro.2015.08.027

  331. Time-resolved photoluminescence properties of hybrids based on inorganic AlGaN/GaN quantum wells and colloidal ZnO nanocrystals Reviewed

    M. Forsberg, C. Hemmingsson, H. Amano, G. Pozina

    Superlattices and Microstructures   Vol. 87   page: 38-41   2015.11

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    Dynamic properties are studied for the AlGaN/GaN quantum well (QW) structures with and without the coating of colloidal ZnO nanocrystals (NCs). The QW exciton recombination rate was reduced in such hybrids compared to the bare QW structure only in the sample with the thinnest cap layer of 3 nm. Assuming that one of the recombination mechanisms in this hybrid is non-radiative resonant energy transfer (NRET) between the QW and the energy acceptor material i.e. ZnO NCs, the maximum pumping efficiency was estimated to be 0.42 at 60 K. The NRET effect is, however, vanished after several months despite that the hybrid structures are composed of chemically stable components.

    DOI: doi:10.1016/j.spmi.2015.07.017

  332. Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges Reviewed

    Toshikiu Yasuda, Kento Hayashi, Syouta Katsuno, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, and Hiroshi Amano

    Physica Status Solidi a   Vol. 212 ( 5 ) page: 920-924   2015.5

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    We investigated the influence of polarization charges in nitride-based semiconductors.

    DOI: 10.1002/pssa.201431730

  333. Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells Reviewed

    Hideaki Murotani, Yoichi Yamada, Yoshio Honda, and Hiroshi Amano

    Physica Status Solidi b   Vol. 252 ( 5 ) page: 940-945   2015.5

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    The optical properties of InGaN/GaN multiple quantum wells (MQWs) have been studied by means of photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy.

    DOI: 10.1002/pssb.201451491

  334. Resonant Raman and FTIR spectra of carbon doped GaN Reviewed

    S. Ito, H. Kobayashi, K. Arak,i, K. Suzuki, N. Sawaki, K. Yamashita, Y. HOnda, H. Amano

    Journal of Crystal Grwoth   Vol. 414 ( 15 ) page: 56-60   2015.3

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    DOI: doi:10.1016/j.jcrysgro.2014.11.024

  335. Electrical characteristics of a-plane low-Mg-doped p-GaN Schottky contacts Reviewed

    Moe Naganawa, Toshichika Aoki, Ji-Su Son, Hiroshi Amano, Kenji Shiojima

    physica status solidi (b)   Vol. 252 ( 5 ) page: 1024–1030   2015.3

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    Electrical characteristics of a variety of Schottky contacts formed with ten metal species on the a-plane of p-type low-Mg-doped GaN grown on r-plane sapphire substrates were studied.

    DOI: 10.1002/pssb.201451581

  336. Optically pumped lasing properties of (1-101) InGaN/GaN stripe multi quantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed

    Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda and Hiroshi Amano

    Applied Physics Express   Vol. 8 ( 2 ) page: 022702   2015.2

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    We demonstrated lasing action and investigated the optical properties of (1 (1) over bar 01) multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating (1 (1) over bar 01) InGaN MQW laser diodes on (001) Si. (C) 2015 The Japan Society of Applied Physics

    DOI: doi:10.7567/APEX.8.022702

  337. Dynamic properties of excitons in ZnO/AlGaN/GaN hybrid nanostructures Reviewed

    Mathias Forsberg, Carl Hemmingsson, Hiroshi Amano , Galia Pozina

    Scientific Reports   Vol. 5   page: 7889   2015.1

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    III-nitride semiconductor/organic polymer hybrid heterostructures combine advantages of epitaxially grown semiconductor quantum wells (QW) with inexpensive polymers having efficient luminescence in the visible region1. Such hybrid micro-structured light emitting diodes (LED) are promising for fabrication of low-cost and highly efficient microlight sources that can be used in full-color displays, imaging systems, miniature chemical and biological sensors. In typical polyfluorene/GaN-based LED hybrids, UV emission from a GaN heterostructure down converts to the organic polymer fluorescence in the visible region via a radiative energy transfer. Overlapping between the UV luminescence and the polyfluorene absorption is required for the operation
    of these hybrids. Today, a novel class of hybrid structures is suggested, in which a non-radiative resonant energy transfer (NRET) from excitation generated in inorganic QWs to excitons in organic films can be utilized. Such LEDs might be considerably more efficient than their radiative energy transfer analogues. In addition to the necessity of a significant spectral overlap between the QW emission and the polymer absorption spectrum, these devices require that the two materials are placed in a close interaction distance of a few nm. The bottleneck is that the operation lifetime of organic/semiconductor hybrid LED structures is limited by degradation
    of polyfluorenes. Using colloidal semiconductor nanocrystals (NCs) instead of polymers can significantly improve the lifetime of such devices. In addition to superior luminescence properties, relatively low cost and chemical stability, the spectral tunability can be achieved by changing the particle chemistry and size. The efficiency of non-radiative resonance energy transfer is typically determined using transient photoluminescence
    (PL) measurements from the quenching of the QW exciton lifetime in the presence of acceptor material (i.e.
    colloidal NCs or polyfluorene). It might be correct in assumption that NRET is the only additional recombination channel appearing in hybrids compared to the bareQWstructure. However, other factors can play also a significant role. For example, surface potential effects have to be considered when non-radiative resonant energy transfer is measured using dynamic properties of the QW excitons.
    Thus, in this work we have studied and discussed the possibility of NRET in hybrid structures fabricated using ZnO NCs films coated on the top of the AlGaN/GaN QWs samples. ZnO NCs satisfies the requirement of
    absorption overlapping with GaN emission (a room temperature band gap energy is 3.3 and 3.4 eV for ZnO and GaN, respectively). Dynamic properties ofQWexcitons in the hybrids and in the bareQWsamples are analyzed in dependence on the QWs cap layer thickness.

    DOI: doi:10.1038/srep07889

  338. Development of underfilling and encapsulation for deep-ultraviolet LEDs Reviewed

    Kiho Yamada, Yuuta Furusawa, Shoko Nagai, Akira Hirano, Masamichi Ippommatsu, Ko Aosaki, Naoki Morishima, Hiroshi Amano and Isamu Akasaki

    Applied Physics Express   Vol. 8 ( 1 ) page: 012101   2015.1

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    The currently available resins for underfilling and encapsulation are limited to wavelengths longer than approximately 330 nm because almost all resins are decomposed by deep-ultraviolet light. Fluorine resins are possible materials for underfilling and encapsulation in deep-ultraviolet LEDs, and we have investigated methods of underfilling and encapsulation using such resins. Also, their durability at wavelengths of 265 and 285 nm has been studied from the photochemical viewpoint, and we propose a stable amorphous fluorine resin that is optically isotropic. Also, a trial of encapsulation using the resin has been made.

    DOI: doi:10.7567/APEX.8.012101

  339. Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region Reviewed

    Jung, Byung Oh; Bae Si-Young; Kim, Sang Yun; Lee, Seunga; Lee, Jeong Yong; Lee, Dong-Seon; Kato, Yoshihiro; Honda, Yoshio ;Amano, Hiroshi

    Nano Energy   Vol. 11   page: 294-303   2015.1

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    Highly ordered, position-controlled gallium nitride (GaN) nanowire based multiple-quantum-wells (MQWs) core-shell architecture arrays are synthesized by metalorganic chemical vapor deposition (MOCVD). We investigate the possibility of using GaN nanowire arrays as a basal template for the growth of InxGa1-xN/GaN MQWs. The MQWs on three different crystal facets (c(-), m(-), and semipolar-plane) of GaN nanowire exhibit dissimilar structural properties. The structural characteristics of InGaN/GaN core-shell arrays are inspected by cross-sectional high-resolution transmission electron microscopy (HR-TEM). We also investigate the optical properties of MQW core-shell structure nanoarrays. The luminescent characteristics of InGaN/GaN core-shell structure arrays are determined by photoluminescence (PL) and cathodoluminescence (CL) measurements. The monochromatic CL images clearly show the light emission behavior of InGaN/GaN MQW coaxial structure. Two distinguishable light emission peaks were observed in the GaN nanowire based core-shell structure. The characteristic of light emission mainly depends on the properties of MQWs, which are generated from different crystal facets of GaN. In addition, the light emission intensity shows different behaviors depending on the area of the GaN nanowire m-plane. The results of this study suggest that GaN nanowire arrays can be used as a good alternative basal template for next-generation light-emitting diodes (LEDs).

    DOI: DOI: 10.1016/j.nanoen.2014.11.003

  340. Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy Reviewed

    Guangxu Ju, Shingo Fuchi, Masao Tabuchi, Hiroshi Amano, Isamu Akasaki

    Journal of Crystal Growth   Vol. 407   page: 68-73   2014.12

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    Continuous in situ X-rayreflectivity(XRR)measurementswereusedtoinvestigatethegrowthprocessof
    an In0.11Ga0.89N epilayeranditssinglequantumwellgrownonc-planeGaN/sapphiretemplatesusingan
    in-house-designed metalorganicvaporphaseepitaxyinstalledinalaboratory-gradeX-raydiffract-
    ometer.Thesurfacerougheningoftheepilayerasafunctionofgrowthtimewascalculatedfromthe
    continuous in situ XRR curve.Thegrowthrate,criticalthickness hc(r) for surfaceroughening,and
    roughening ratewereobtained.Theexperimentalcriticalthickness hc(r) of theIn0.11Ga0.89N epilayer
    analyzed fromthecontinuous in situ XRR curvewas14.870.4 nm.Basedonthecalculatedtheoretical
    critical thickness hc and theexperimental hc(r,2), Fischer's modelseemstobeappropriatefordescribing
    the criticalthicknessoftheInGaN/GaN.

    DOI: 10.1016/j.jcrysgro.2014.08.023

  341. Photoemission lifetime of a negative electron affinity gallium nitride photocathode Reviewed

    Tomohiro Nishitani, Masao Tabuchi, Hiroshi Amano, Takuya Maekawa, Makoto Kuwahara and Takashi Meguro

    Journal of Vacuum Science and Technology   Vol. B32 ( 6 ) page: 06F901   2014.11

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    A photocathode electron source using p-type GaN semiconductor with a negative electron affinity (NEA) surface has been studied for its ability to maintain an extended NEA state. The key technology of NEA photocathodes is the formation of electric dipoles by cesium and gallium atoms on the surface, which makes it possible for photoexcited electrons in the conduction band minimum to escape into the vacuum. This means that in order to keep the electron energy spread as small as possible, the excitation photon energy should be tuned to the band gap energy. However, the NEA surface is damaged by the adsorption of residual gas and the back-bombardment of ionized residual gas by photoelectrons. The p-type GaN semiconductor was measured time evolution in quantum yield during NEA surface activation, and a lifetime of quantum yield of excitation energy corresponding to the band gap energy in comparison to the p-type GaAs as the conventional NEA photocathode. In NEA surface activation process, the quantum yield of the GaN was more than 3 orders of magnitude higher than that of the GaAs by only cesium deposition. The exposure amount of cesium in the NEA surface activation of the GaAs was 1.5 times as that of the GaN, even though the quantum yield of the GaAs was the same value as the GaN. Lifetime of NEA-photocathodes using the GaN was 21 times longer than that using the GaAs. The decrease of quantum yield of the GaAs was well correlated in the form of the exponential decrease function with a decrease time of 4.4 h, while the decrease of quantum yield of the GaN was well correlated in the form of the exponential decrease function with two decrease times of 47 and 174 h.

  342. Nature of yellow luminescence band in GaN grown on Si substrate Reviewed

    Shogo Ito, Taihei Nakagita, Nobuhiko Sawaki, Hyung Soo Ahn, Masashi Irie, Toshiki Hikosaka, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 53   page: 11RC02/1-5   2014.9

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    DOI: doi:10.7567/JJAP.53.11RC02

  343. Atom probe tomography study of Mg-doped GaN layers Reviewed

    S Khromov, D Gregorius, R Schiller, J Lösch, M Wahl, M Kopnarski, H Amano, B Monemar, L Hultman and G Pozina

    Nanotechnology   Vol. 25 ( 27 )   2014.6

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    DOI: doi:10.1088/0957-4484/25/27/275701

  344. Characterization of nonpolar a-plane InGaN/GaN multiple quantum well Reviewed

    Ji-Su Son, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 53   page: 05FL01   2014.5

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    The characteristics of nonpolar a-plane (1120) GaN (a-GaN) grown using single and double nanopillar SiO2 masks were investigated. The two
    nanopillar SiO2 masks were directly fabricated on an r-plane sapphire substrate and a-GaN by the epitaxial lateral overgrowth (ELOG) technique.
    Through the use of the single and double nanopillar SiO2 masks, the crystalline quality and optical properties of a-GaN were markedly improved
    because of the nanoscale ELOG effect and a number of voids in the single and double nanopillar SiO2 mask areas in comparison with the planar
    sample. The submicron pit densities of the planar, single, and double nanopillar mask samples were >2 ' e9, >7e8, and >4e8cm-2,
    respectively. The internal quantum efficiency (IQE) values at room temperature of three-period InGaN/GaN multiple quantum wells (MQWs) grown
    using the planar, single, and double nanopillar masks were 45, 60, and 68% at a carrier concentration of 1.0e18cm-3, respectively.

    DOI: 10.7567/JJAP.53.05FL01

  345. X-ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy Reviewed

    Guangxu Ju, Yoshihiro Kato, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    physica status solidi (c)   Vol. 11 ( 3-4 ) page: 393-396   2014.4

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    A set of GaN/GaInN single quantum wells (SQWs) were grown on c-plane GaN/sapphire templates using metal organic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The structural information on the interfaces and surfaces was obtained by fitting the experimental X-ray spectra and was compared between MOVPE and ALE mode. The X-ray crystal truncation rod (CTR) scattering measurement results showed that the samples grown by ALE had sharper interfaces than those grown by MOVPE. Both the X-ray reflectivity (XRR) curve-fitting results and atomic force microscope (AFM) results indicated that the surfaces of the ALE-grown SQWs were smoother than those of MOVPE-grown SQWs.

    DOI: 10.1002/pssc.201300670

  346. Enhancement of light output power on GaN based light emitting diodes using two direction stripe patterned sapphire substrate Reviewed

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi C   Vol. 11   page: 722-725   2014.4

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    To achieve both the reduction of threading dislocation density (TDD) and the enhancement of light extraction efficiency (LEE) of light-emitting diodes (LEDs), a two-directional stripe-patterned sapphire substrate (TPSS) was fabricated. First, a stripe pattern parallel to the a-axis of Al2O3 was formed on an as-received c -sapphire wafer and then a second stripe pattern rotated around 3° from the m-axis of Al2O3 was formed on the first stripe PSS. The light output power of TPSS LEDs was around 1.25 times higher than that of LEDs on a flat sapphire substrate. This enhancement is caused by the increase of both the internal quantum efficiency (IQE) and the LEE. On the other hand, although the LED on TPSS with the second stripe just parallel to the m-axis of Al2O3 showed a similar enhancement ratio of the light output power, the current leakage of this LED increased with the concentration of threading dislocations on the surface of LEDs. Stripes rotated 3° from the m-axis of Al2O3 changed the growth mode and realized GaN films with a smooth surface without pit formation. Therefore, the misalignment of the stripe from the m-axis of Al2O3 will become a new design parameter for realizing high-efficiency reliable LEDs.

    DOI: 10.1002/pssc.201300470

  347. Epitaxial growth of GaN by REMOCVD in the downflow of a very high frequency(VHF) N2/H2 excited plasma Reviewed

    Yi Lu, Hiroki Kondo,Kenji Ishikawa,Osamu Oda,KeigoTakeda,Makoto Sekine, Hiroshi Amano,Masaru Hori

    Journal of Crystal Growth   Vol. 391   page: 97-103   2014.4

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    We found that this REMOCVD allowed the growth of epitaxial GaN films of the wurtzite structure of (0001) orientation on sapphire substrates with a high growth rate of 0.42 μm/h at a low temperature of 800 °C. The present REMOCVD is a promising method for GaN growth at relatively low temperature and without using costly ammonia gas.

    DOI: 10.1016/j.jcrysgro.2014.01.014

  348. Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays Reviewed

    Cao Miao, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 53   page: 0303060   2014.3

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    Regularly distributed nanopyramid arrays with a highly uniform size were grown by selective-area growth. The nanopyramid size could be tuned by varying the growth time. Two emission peaks were observed from multiple quantum wells grown on the nanopyramids. The longer-wavelength peak originated from the apexes of pyramids with threefold symmetry. High-density stacking faults observed at these triangular apexes might be responsible for the higher indium incorporation. The formation of embedded voids inside the pyramids was explained by the different growth rates at the edge and center of the mask window caused by the low diffusion length.

    DOI: 10.7567/JJAP.53.030306

  349. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy Reviewed

    Guangxu Ju, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano

    Journal of Applied Physics   Vol. 115   page: 094906   2014.3

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    The effects of GaN quantum barriers with changing growth temperatures on the interfacial
    characteristics of GaN/InGaN single quantum well (SQW) grown on GaN templates by metalorganic
    vapour phase epitaxy were in situ investigated by X-ray crystal truncation rod (CTR) scattering and
    X-ray reflectivity measurements at growth temperature using a laboratory level X-ray diffractometer.
    Comparing the curve-fitting results of X-ray CTR scattering spectra obtained at growth temperature
    with that at room temperature, the InxGa1-xN with indium composition less than 0.11 was stabile of
    the indium distribution at the interface during the whole growth processes.

    DOI: 10.1063/1.4867640

  350. Multijunction GaInN-based solar cells using a tunnel junction Reviewed

    Hironori Kurokawa, Mitsuru Kaga, Tomomi Goda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Applied Physics Express   Vol. 7 ( 3 ) page: 034104   2014.3

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    We fabricated and characterized a two-junction GaInN-based solar cell using a tunnel junction fabricated by crystal growth. This solar cell has two active layers with a differing bandgap energy corresponding to blue or green light. We confirmed that the open-circuit voltage (VOC) in this solar cell was increased by the series connection using the tunnel junction. The short-circuit current density, VOC, fill factor, and energy conversion efficiency of this solar cell were 0.28 mA/cm2, 3.0 V, 0.5, and 0.41%, respectively, under an air mass filter of 1.5 G at 1-sun irradiation and room temperature.

    DOI: 10.7567/APEX.7.034104

  351. Novel activation process for Mg-implanted GaN Reviewed

    Shin Hashimoto, Takao Nakamura, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   Vol. 388   page: 112-115   2014.2

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    A novel activation process for Mg-implanted GaN was demonstrated. As opposed to the conventional thermal annealing process, an H2/NH3 alternating supply annealing process achieved better optical activation, stronger near-ultraviolet luminescence and weaker yellow luminescence in the photoluminescence spectroscopy. After this process, small hexagonal hillocks were observed on the surface, which indicated that crystal regrowth was induced by this process, consisting of decomposition of GaN by H2 supplies and re-crystallization by NH3 supplies. It was revealed that the implanted Mg could easily be located at the activation site by means of crystal regrowth by this process.

    DOI: doi:10.1016/j.jcrysgro.2013.07.011

  352. Properties of the main Mg-related acceptors in GaN from optical and structural studies Reviewed

    B. Monemar, P. P. Paskov, G. Pozina, C. Hemmingsson, J. P. Bergman, S. Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoç, H. Amano, M. Iwaya, and I. Akasaki

    Journal of Applied Physics   Vol. 115   page: 053507   2014.2

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    The luminescent properties of Mg-doped GaN have recently received particular attention, e.g., in the
    light of new theoretical calculations, where the deep 2.9 eV luminescence band was suggested to be
    the main optical signature of the substitutional MgGa acceptor, thus, having a rather large binding
    energy and a strong phonon coupling in optical transitions. We present new experimental data on
    homoepitaxial Mg-doped layers, which together with the previous collection of data give an
    improved experimental picture of the various luminescence features in Mg-doped GaN.

    DOI: 10.1063/1.4862928

  353. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching Reviewed

    Ji-Su Son, Yoshio Honda, and Hiroshi Amano

    Optics Express   Vol. 22 ( 3 ) page: 3585-3592   2014.2

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    Nonpolar a-plane (11-20) GaN (a-GaN) layers with low overall defect density and high crystalline quality were grown on r-plane sapphire substrates using etched a-GaN. The a-GaN layer was etched by pulse NH3 interrupted etching.

    DOI: 10.1364/OE.22.003585

  354. Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Reviewed

    Byung Oh Jung, Si-Young Bae, Yoshihiro Kato, Masataka Imura, Dong-Seon Lee, Yoshio Honda and Hiroshi Amano

    CrystEngComm   Vol. 16   page: 2273-2282   2014.1

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    we demonstrate a scalable process for the precise position-controlled selective growth of
    GaN nanowire arrays by metalorganic chemical vapor deposition (MOCVD) using a pulsed-mode growth
    technique. The location, orientation, length, and diameter of each GaN nanowire are controlled via
    pulsed-mode growth parameters such as growth temperature and precursor injection and interruption
    durations.

    DOI: 10.1039/c3ce42266f

  355. Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates Reviewed

    Ji-Su Son, Y. Honda, M. Yamaguchi, H. Amano, K. H. Baik, Y. G. Seo and S. M. Hwang

    Thin Solid Films   Vol. 546 ( 11 ) page: 108-113   2013.11

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    We report on the characteristics of a-plane GaN films directly grown on optimized silicon-dioxide-patterned r-plane sapphire substrates. Various shapes and sizes of silicon dioxide patterns were considered with the aim of achieving fully coalescent a-plane GaN films with a smooth surface and high crystalline quality. The omega full widths at half maximum of the X-ray rocking curve values of optimized a-plane GaN films with regular hexagonal patterns of 1 micron window width and 6 micron mask width were measured to be 597 arcsec along the c-axis direction and 457 arcsec along the m-axis direction. Atomic force microscopy images revealed a significant reduction in the density of submicron pits in the mask region.

  356. Effects of exciton localization on internal quantum efficiency of InGaN nanowires Reviewed

    Hideaki Murotani, Yoichi Yamada, Takuya Tabata, Yoshio Honda, Masahito Yamaguchi and Hiroshi Amano

    Journal of Applied Physics   Vol. 114   page: 153506   2013.10

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    Internal quantum efficiency of InGaN nanowires grown by PA MBE was investigated in detail.

    DOI: 10.1063/1.4825124

  357. Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy Reviewed

    Tomohiro Doi, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JB14   2013.8

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    InGaN/AlGaN multi-quantum wells (MQWs) were grown by metalorganic vapor phase epitaxy. The In composition of the InGaN well layer was found to increase with the tensile strain of the AlGaN barrier layer. The InGaN/AlGaN strain-compensated structure can be grown at a higher growth temperature than that of the InGaN/GaN MQW, which shows that the same emission wavelength and thus the density of the V-defects can be effectively suppressed.

    DOI: 10.7567/JJAP.52.08JB14

  358. GaN Overgrowth on Thermally Etched Nanoporous GaN Template Reviewed

    Cao Miao, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JB03   2013.8

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    A thermal-etching process for fabricating nanoporous GaN templates in a metalorganic vapor phase epitaxy (MOVPE) reactor was proposed. Such nanoporous templates exhibited nearly complete strain relaxation and considerably increased photoluminescence (PL) intensity. The threading dislocation density (TDD) after overgrowth was reduced from 3 ×109 to 4 ×108 cm-2 for the template with poor quality, whereas little improvement was observed for the high-quality template (TDD, 4 ×108 cm-2). Multiple quantum wells (MQWs) grown on a nanoporous template fabricated from the high-quality GaN template were used to assess the effect on LED performance. The PL intensity of the sample with a nanoporous structure showed a twofold increase in PL intensity compared with the control sample.

    DOI: 10.7567/JJAP.52.08JB03

  359. Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer Reviewed

    Takaya Yamada, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 52   page: 08JB16   2013.8

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    GaN films were successfully grown on Si(111) substrates using a reactive-sputter-deposited AlN intermediate layer (sp-AlN) at 350 °C. Uniform GaN growth was obtained with the pre sputtering of a thin Al film before the deposition of sp-AlN. Atomic force microscopy (AFM) measurements revealed that the density of pits originating from the ends of mixed/screw-type dislocations is about 109 cm-2, which is much lower than that of GaN grown on a metalorganic vapor phase epitaxy (MOVPE) deposited AlN intermediate layer. The decrease in the pit density might have originated from the small number of initial nuclei of GaN.

    DOI: 10.7567/JJAP.52.08JB16

  360. Fabrication of InGaN/GaN Multiple Quantum Wells on (1-101) GaN Reviewed

    Tomoyuki Tanikawa, Tomotaka Sano, Maki Kushimoto, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JC05   2013.8

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    InGaN/GaN multiple quantum wells (MQWs) on semipolar (1101) GaN microstripes on a Si substrate were fabricated and their optical properties were investigated. From cathodoluminescence (CL) analysis, strong CL emission was obtained in an MQW emitting at 433 nm. However, dark lines appeared in MQWs emitting at longer wavelengths. These dark lines are attributed to lattice relaxation and the generation of misfit dislocations and stacking faults in an MQW, resulting in nonradiative centers. The internal quantum efficiency (IQE) was estimated from excitation-power-dependent photoluminescence analysis. The (1101) InGaN/GaN MQW had a high IQE owing to the high crystalline quality of the underlying GaN and the reduced piezoelectric field. The IQE at a carrier concentration of 1×1018 cm-3 in a sample emitting at 490 nm was as high as 90%. The efficiency decreased in a sample with a higher indium content in the MQW due to the generation of misfit dislocations and stacking faults.

    DOI: 10.7567/JJAP.52.08JC05

  361. Stacking Faults and Luminescence Property of InGaN Nanowires Reviewed

    Takuya Tabata, Jihyun Paek, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JE06   2013.8

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    InGaN nanowires (NWs) were grown on (111)Si substrate using radio-frequency plasma-assisted molecular beam epitaxy, and the density of the stacking faults (SFs) in the InGaN NWs was estimated. High-density SFs were observed in the scanning transmission electron microscopy (STEM) and transmission electron microscopy (TEM) images of the InGaN NWs, and a few zincblende layers appeared in the wurtzite structure. When growth temperature increased, the density of the SFs in the InGaN NW, the photoluminescence (PL) peak wavelength, and the full width at half maximum (FWHM) of PL spectra decreased, whereas the integrated PL intensity increased. These results suggest that a high growth temperature is effective for decreasing the density of SFs in InGaN NWs, and InGaN NWs grown at high temperature have strong PL luminescence due to the low In composition and the corresponding low SFs density.

    DOI: 10.7567/JJAP.52.08JE06

  362. Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire Reviewed

    Ji-Su Son, Cao Miao, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Yong Gon Seo, Sung-Min Hwang, and Kwang Hyeon Baik

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JC04   2013.8

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    We report on the combined effects of a-plane GaN layers on a nanoscale patterned insulator on an r-plane sapphire substrate and epitaxial lateral overgrowth (ELOG) techniques. The fully coalescent a-plane GaN layer using nano- and microscale SiO2 masks showed the formation of nano- and microscale voids on the masks, respectively. Atomic force microscopy (AFM) measurements revealed a surface roughness of 0.63 nm and a submicron pit density of 7.8 ×107 cm-2. Photoluminescence (PL) intensity was enhanced by a factor of 9.0 in comparison with that of a planar sample. Omega full-width at half-maximum (FWHM) values of the (1120) X-ray rocking curve along the c- and m-axes were 553 and 788 arcsec, respectively. A plan-view cathodoluminescence (CL) mapping image showed high luminescence intensity on the SiO2 masks.

    DOI: 10.7567/JJAP.52.08JC04

  363. High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate Reviewed

    Tomotaka Sano, Tomohiro Doi, Shunko Albano Inada, Tomohiko Sugiyama, Yoshio Honda, Hiroshi Amano, and Takashi Yoshino

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JK09   2013.8

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    We fabricated blue, blue-green, and green light-emitting diodes (LEDs) of different dislocation densities (DD) and characterized their internal quantum efficiency (IQE). The IQE of the blue LEDs fabricated using GaN substrate exceeded 90 percent, however, when we used a GaN-on-sapphire substrate, IQE was limited to 60 percent. Droop was reduced by use of the GaN substrate. The junction temperature of the GaN-on-sapphire substrate was found to be 200 degreeC although the junction temperature of the GaN substrate was 50 degreeC when a forward current of 100 A/cm2 was driven. A lowering of IQE in green LEDs to 60 percent was observed, even though we used a low-dislocation-density substrate.The junction temperature of blue-green and green LEDs was about 100 degreeC when a forward current of 177 A/cm2 was driven, which indicated that junction temperature is not a major factor for IQE suppression in green LEDs.

    DOI: 10.7567/JJAP.52.08JK09

  364. Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern Reviewed

    Koji Okuno, Takahide Oshio, Naoki Shibata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JB09   2013.8

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    A sapphire substrate with a grooved stripe pattern along different radial directions was prepared to investigate the effects of stripe direction on the growth mode and threading dislocation (TD) behavior of GaN films. When the stripe direction is oriented parallel to [1010]sapphire, the GaN films have a triangular structure that is formed by the GaN{1011} facets. As the stripe direction rotates from [1010]sapphire, nanosteps with a step height of around 80 nm are formed on the GaN{1011} facets and then the coalescence of GaN on the ridges and grooves advances. GaN films with a smooth surface and a TD density as low as 2.0×108 cm-2 were achieved when the stripe direction was rotated 3° from [1010]sapphire. Our result indicates that the surface roughness and TD density of GaN films can be controlled by precisely adjusting the angle of the stripe direction from [1010]sapphire.

    DOI: 10.7567/JJAP.52.08JB09

  365. Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer Reviewed

    Toshiya Ohata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JB11   2013.8

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    A thick InGaN film was grown on a sapphire substrate by metal organic vapor phase epitaxy using a thin buffer layer of sputter-deposited InGaN. A thick film of highly luminescent In0.2Ga0.8N can be successfully grown at a rate as high as 2 µm/h. The crystal quality of InGaN grown on the sputter-deposited InGaN buffer layer was better than that of InGaN grown directly on the sapphire substrate. The sample showed n-type conduction with a carrier concentration and mobility of 5×1018 cm-3 and 3 cm2/(V·s), respectively.

    DOI: 10.7567/JJAP.52.08JB11

  366. Combination of ITO and SiO2/AlN Dielectric Multilayer Reflective Electrodes for UV-Emitting Diodes Reviewed

    Tsubasa Nakashima, Kenichiro Takeda, Hiroshi Shinzato, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JG07   2013.8

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    We have investigated novel reflective electrodes by combining an ITO layer and a SiO2/AlN dielectric multilayer (DM) for UV-light-emitting diodes (LEDs). The reflectance of 10 pairs of SiO2/AlN DM reached 98.5 percent at 350 nm. As a result, the ITO/DM electrodes simultaneously satisfied the requirements of high reflectivity in the UV region, good contact characteristics, and current spreading. The light output power of the UV LED with an ITO/DM electrode is 1.2 and 1.6 times higher than those of LEDs with ITO/Al and Ni/Au electrodes, respectively.

    DOI: 10.7567/JJAP.52.08JG07

  367. GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy Reviewed

    Shinta Nakagawa, Takuya Tabata, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JE07   2013.8

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    Self-assembled GaN and InGaN nanowires (NWs) were directly grown on a highly oriented pyrolytic graphite (HOPG) substrate by radio frequency molecular beam epitaxy (RF-MBE). The GaN NWs grown on HOPG had a shorter length and larger diameter than those grown conventionally on a Si(111) substrate based on the analysis of scanning electron microscopy (SEM) images. They were also found to have good crystalline qualities with few stacking faults, as determined by scanning transmission electron microscopy (STEM) analysis. Photoluminescence (PL) measurements at room temperature indicated that the luminescence intensity of the GaN NWs on HOPG is stronger than that of NWs grown on a Si(111) substrate; however, the InGaN NWs on both substrates showed similar tendencies with respect to the shift of the luminescence wavelength as a function of the growth temperature. While In incorporation decreased as the growth temperature increased, the uniformity of the InGaN NW arrays improved rapidly.

    DOI: 10.7567/JJAP.52.08JE07

  368. Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes Reviewed

    Mikiko Mori, Shinichiro Kondo, Shota Yamamoto, Tatsuro Nakao1, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JH02   2013.8

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    We investigated the concentration properties of GaInN-based solar cells using different window electrodes. A significant difference was observed between the concentrating properties of the window electrode structures. It was clearly found that indium tin oxide (ITO) is suitable as an electrode. The short-circuit current density, open-circuit voltage, fill factor, and energy conversion efficiency of nitride-based solar cells fabricated using an ITO electrode were 7.1×102 mA/cm2, 2.2 V, 79%, and 4.0%, respectively, under an air mass filter of 1.5G at 300 suns and at room temperature.

    DOI: 10.7567/JJAP.52.08JH02

  369. Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires Reviewed

    Hideaki Murotani, Hiroya Andoh, Takehiko Tsukamoto, Toko Sugiura, Yoichi Yamada, Takuya Tabata, Yoshio Honda, Masatoshi Yamaguchi, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JE10   2013.8

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    The internal quantum efficiency (IQE) of InGaN nanowires with different emission wavelength of 485, 515, 555, and 580 nm has been studied by means of photoluminescence (PL) spectroscopy. It was found from the analysis of IQE as a function of excitation power density that the IQE was unchanged at about 100% under weak excitation conditions at low temperature. This indicated that the effects of nonradiative recombination processes were negligibly small at low temperature. Moreover, the IQE increased from 5 to 12% with increasing emission wavelength from 485 to 580 nm. Since the clear correlation between the IQE and the PL blue shift due to band filling effects of localized states was observed, the increase in the IQE reflected the increase in the effect of exciton localization with increasing indium composition.

    DOI: 10.7567/JJAP.52.08JE10

  370. Luminescence of Acceptors in Mg-Doped GaN Reviewed

    Bo Monemar, Sergey Khromov, Galia Pozina, Plamen Paskov, Peder Bergman, Carl Hemmingsson, Lars Hultman, Hiroshi Amano, Vitaliy Avrutin, Xing Li, and Hadis Morkoç

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JJ03   2013.8

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    It is concluded that the typical PL peaks at 3.466 eV (ABE1)and the broader 3.27 eV DAP PL are the expected standard PL signatures of the substitutional Mg acceptor. Additional broader peaks at 3.455 eV (ABE2) and 3.1 eV are suggested to be related to the same acceptors perturbed by nearby basal plane stacking faults. The low temperature metastability of PL spectra is assigned to a nonradiative metastable deep level.

    DOI: 10.7567/JJAP.52.08JJ03

  371. Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20 > and <1-100 > Zone-Axes of AlN for Polarity Determination Reviewed

    Masataka Imura, Ujjal Gautam, Kiyomi Nakajima, Yasuo Koide, Hiroshi Amano, and Kenji Tsuda

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JE15   2013.8

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    To accurately and easily determine the polarity of AlN using transmission electron microscopy, we compare the convergent-beam electron diffraction (CBED) patterns along the widely used <1120 > and <1100 > zone-axes. For the <1120 > zone-axis, the diffraction disk of g= 0002 differs from that of g= 0002, while for <1100 >, the diffraction disks of g= 0002 and 0002 are similar. The preferential clarity of these two disks is explained using Bloch-wave dynamical theory. To further support the explanation, we compare the results of GaN case. On the basis of our analysis, we conclude that the CBED patterns of the <1120 > zone-axis are more useful for accurately determining AlN polarity compared to the CBED patterns along the <1100 > zone-axis.

    DOI: 10.7567/JJAP.52.08JE15

  372. Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities Reviewed

    Kimiyasu Ide, Yuko Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki, and Hiroshi Amano

    Jpn. J. Appl. Phys.   Vol. 52 ( 8 ) page: 08JE22   2013.8

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    Using the epitaxial lateral growth technique, we compared the crystallinity and relaxation ratio of 3-µm- and 200-nm-thick Al0.5Ga0.5N on an AlN template and AlN grown by epitaxial lateral overgrowth (ELO-AlN), both of which were grown on a sapphire substrate. Although the relaxation ratios of 3-µm-thick Al0.5Ga0.5N were almost the same, the misfit dislocation density at the interface and the density of threading dislocations reaching the surface of Al0.5Ga0.5N were significantly different. Also, the increase in the density of newly generated misfit dislocations was found to be highly dependent on the quality of the AlN underlying layer. We also discuss the difference in the initial growth mode of each Al0.5Ga0.5N sample.

    DOI: 10.7567/JJAP.52.08JE22

  373. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN Reviewed

    Hiroshi Amano

    Japanese journal of applied physics   Vol. 52 ( 5 ) page: 050001-1-050001-10   2013.5

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    With the continuously increasing demand for the conservation and generation of energy, bulk substrates of group III nitride semiconductors are highly expected to maximize their potential. In this report, I review the current status of the growth methods for bulk GaN single crystals used for substrates as well as summarize the characteristics of blue light-emitting diodes (LEDs), heterojunction field-effect transistors (HFETs), and photovoltaic cells on GaN substrates.

    DOI: 10.7567/JJAP.52.050001

  374. AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN Reviewed

    T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

    Journal of Crystal Growth   Vol. 370 ( 1 ) page: 16-21   2013.5

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    The GaN/AlN multilayer structure was grown on a stripe-patterned and dot-patterned Si substrate, and subsequently annealed at 1200 °C in H2 and NH3 atmosphere. We achieved an AlN/air structure by the decomposition of GaN from the microcracks of AlN. Partially crack-free AlN layers were observed over a 5×5 μm area in the c-plane of AlN/air DBRs.

    DOI: 10.1016/j.jcrysgro.2012.09.062

  375. Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy Reviewed

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Tanaka, Shigeyasu; Amano, Hiroshi

    Physica Status Solidi C   Vol. 10 ( 3 ) page: 369-372   2013.3

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    DOI: 0.1002/pssc.201200587

  376. Effects of low energy e-beam irradiation on cathodoluminescence from GaN Reviewed

    Suihkonen, S.; Nykaenen, H.; Tanikawa, T.; Yamaguchi, M.; Honda, Y.; Amano, H.

    Physica Status Solidi A   Vol. 210 ( 2 ) page: 383-385   2013.2

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    DOI: 10.1002/pssa.201228457

  377. Development of High-Density Nitrogen Radical Source for Low Mosaicity and High Rate Growth of InGaN Films in Molecular Beam Epitaxy Reviewed

    Chen, S ; Kawai, Y ; Kondo, H ; Ishikawa, K ; Takeda, K ; Kano, H ; Sekine, M ; Amano, H Hori, M

    Japanese Journal of Applied Physics   Vol. 52 ( 2 ) page: 021001-021006   2013.2

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    A high-density radical source (HDRS) was developed by optimizing the antenna structure and introducing an external magnetic field to plasma. Nitrogen radical generation by the HDRS at a density of 2.3 ×1012 atoms cm-3, which was one order higher than that for the conventional radical source (CRS), was achieved. The HDRS- and CRS-assisted InGaN growth in molecular beam epitaxy (MBE) was carried out. For the HDRS case, a diffraction peak in the X-ray rocking curve of the grown InGaN films showed a narrower peak, which width below 600 arcsec even with a high growth rate of 1.4 µm/h for InGaN. MBE with the assistance of HDRS has a great potential in the growth of nitride films with a lower mosaicity and a higher growth rate.

    DOI: 10.7567/JJAP.52.021001

  378. Surface potential effect on excitons in AlGaN/GaN quantum well structures Reviewed

    Pozina, G.; Hemmingsson, C.; Amano, H.; Monemar, B.

    Applied Physics Letters   Vol. 102 ( 8 ) page: 082110/1-082110/4   2013.2

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    DOI: 10.1063/1.4793568

  379. Individual roles of atoms and ions during hydrogen plasma passivation of surface defects on GaN created by plasma etching Reviewed

    Chen, Shang; Ishikawa, Kenji; Lu, Yi; Kometani, Ryosuke; Kondo, Hiroki; Tokuda, Yutaka; Egawa, Takashi; Amano, Hiiroshi; Sekine, Amano; Hori, Masaru

    Japanese Journal of Applied Physics   Vol. 51 ( 11 ) page: 111002/1-11102/5   2012.11

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    In the recovery of photoluminescence intensities for band-edge emissions at around 3.47 eV in the case of gallium nitride (GaN), we have studied the individual roles of hydrogen atoms (H) and hydrogen ions (H-n(+)). Surface defects such as nitrogen vacancies created by plasma etching were passivated by H termination. By utilizing hydrogen plasmas, we clarified the recovery efficiency by optical and stoichiometrical improvements with respect to the balance between the fluxes of H and H-n(+). By deflecting H-n(+) by applying an electric field, the efficiency was improved using an identical H dosage, since the simultaneous irradiation of the energetic H-n(+) promoted the desorption of the formed passivated Ga-H bonds.

    DOI: 10.1143/JJAP.51.111002

  380. Correlation between device performance and defects in GaInN-based solar cells Reviewed

    Mori, Mikiko; Kondo, Shinichiro; Yamamoto, Shota; Nakao, Tatsuro; Fujii, Takahiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   Vol. 5 ( 8 ) page: 082301/1-082301/3   2012.8

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    We investigated the correlation between the device performance and defects, such as V-shaped pits and threading dislocations, in GaInN-based solar cells. To realize high-performance GaInN-based solar cells with a high open-circuit voltage and fill factor, it is essential to realize a low pit density of less than 10(7) cm(-2). In this study, we were unable to observe clear evidence of any effect of the threading dislocation density in the GaN underlying layer.

    DOI: 10.1143/APEX.5.082301

  381. MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate Reviewed

    Yasuhiro Isobe, Hiromichi Ikki, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki,Takayuki Sugiyama, Hiroshi Amano, Mamoru Imade, Yusuke Mori

    Journal of Crystal Growth   Vol. 351 ( 1 ) page: 126-130   2012.7

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    We investigated unintentionally doped nonpolar a- and m-plane GaN layers grown by metalorganic vapor phase epitaxy under several sets of conditions on freestanding a- and m-plane GaN substrates. Oxygen contamination in a-plane GaN is greatly reduced by increasing the V/III ratio during growth. As a result, a high-resistivity GaN buffer layer for an AlGaN/GaN heterostructure field-effect transistor was realized.

  382. In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

    Mitsunari, Tadashi; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physca Status Solidi c   Vol. 9 ( 3-4 ) page: 480-483   2012.7

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    We proposed an in-situ void formation technique using high-temp. AlN growth on GaN stripes in order to reduce residual stress. Microcracks were obsd. during the growth of AlN; the GaN stripes then sublimated from the microcracks while keeping the AlN shell, resulting in void formation in the AlN shell structure. After GaN regrowth on this AlN shell structure, we successfully coalesced the GaN stripes to form a smooth, thick GaN layer having voids at the GaN/substrate interface. Raman spectroscopy confirmed that the residual tensile stress was decreased. The thermal stress decreased owing to the sepn. between the GaN layer and a foreign substrate.

    DOI: 10.1002/pssc.201100502

  383. Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate Reviewed

    T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, Y. Mori

    Physica Status Solidi c   Vol. 9 ( 3-4 ) page: 875-878   2012.7

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    We measured drain bias stress effects and current collapse in AlGaN/ GaN heterostructure field-effect transistors (HFETs) on a-plane and c-plane GaN substrates. An a-plane AlGaN/GaN HFET (a-HFET) shows small current collapse with a threshold voltage (Vth = -1.8 V). On the other hand, a c-plane HFET (c-HFET) with the same barrier thickness (20 nm) shows a small current collapse, although Vth was neg. large (Vth = -4 V). Current collapse in a-HFET was not large compared with that in conventional c-HFET on GaN. A c-HFET on sapphire was also measured. The current collapses in HFETs on sapphire were larger than that in HFETs on a GaN substrate. The current collapses in the thin-barrier c-HFET (Vth = -1.8 V) were particularly large. Therefore, an a-plane device is promising for a small or pos. Vth with small current collapse.

    DOI: 10.1002/pssc.201100397

  384. Laser lift-off of AlN/sapphire for UV light-emitting diodes Reviewed

    Aoshima, Hiroki; Takeda, Kenichiro; Takehara, Kosuke; Ito, Shun; Mori, Mikiko; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Physica Status Solidi C   Vol. 9 ( 3-4 ) page: 753-756   2012.7

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    We report on laser lift-off (LLO) of AlN/sapphire for UV light-emitting diodes (LEDs). Underfill between chip and submount is a key factor for the successful LLO of AlN/sapphire. We fabricated thin-film-flip-chip UV LEDs with a peak wavelength of 343 nm using the LLO. Moreover surface texturing was carried out on the exfoliated AlN surface. The light output power from the UV LED after the LLO and the surface texture at exfoliated surface is 1.7 times higher than that before the LLO at 20 mA.

    DOI: 10.1002/pssc.201100491

  385. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

    Tabata, Takuya; Paek, Jihyun; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi c   Vol. 9 ( 3-4 ) page: 646-649   2012.7

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    We have grown InGaN nanowires (NWs) on a (111)Si substrate directly by radio-frequency plasma-assisted mol. beam epitaxy (RF-MBE), and investigated their In compositional distribution by energy dispersive x-ray spectroscopy (EDX). The In compn. line profiles of InGaN NWs measured by EDX are different at each position in the InGaN NWs, and In is most easily incorporated into the top of NWs. The In compn. at the top of the NWs depends on the growth temp. and the In flux ratio. However, the In compns. at other positions is not dependent on these factors. Thus, these results might be due to the limited diffusion of In atoms from the top of the NWs towards the NWs/Si interface.

    DOI: 10.1002/pssc.201100446

  386. Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors Reviewed

    Kazuya Ikeda, Yasuhiro Isobe, Hiromichi Ikki, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

    Physica Status Solidi c   Vol. 9 ( 3-4 ) page: 942-944   2012.7

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    We report on the electrical properties of AlInN/GaInN
    heterostructures fabricated with InN molar fractions of 0 to 0.6 in the GaInN layer. High-density two-dimensional electron gases are formed near the interfaces of AlInN/AlN/GaInN at InN molar fractions of 0.3 and 0.6.
    The Al0.82In0.18N/AlN/Ga0.4In0.6N/GaN heterostructure
    field-effect transistors exhibited static characteristics.
    The maximum drain-source current reached a value of
    0.26 A/mm.

    DOI: 10.1002/pssc.201100492

  387. High carrier concentration in high Al-composition AlGaN-channel HEMTs Reviewed

    Hashimoto, Shin; Akita, Katsushi; Yamamoto, Yoshiyuki; Ueno, Masaki; Nakamura, Takao; Yafune, Norimasa; Sakuno, Keiichi; Tokuda, Hirokuni; Kuzuhara, Masaaki; Takeda, Kenichiro; Iwaya, Motoaki; Amano, Hiroshi

      Vol. 9 ( 2 ) page: 373-376   2012.6

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    High Al-compn. (Al = 51%) and low Al-compn. (Al = 20%) AlGaN-channel high-electron-mobility transistors (HEMTs) on AlN layers with very high carrier concn. were demonstrated. In two types of HEMTs, 2-dimensional electron gases (2DEG) were clearly obsd. and peak carrier concn. and sheet carrier concn. were approx. 1020 cm-3 and higher than 2 × 1013 cm-2, resp. From the X-ray diffraction (XRD) measurements, it was obsd. that the AlGaN channel layers on the AlN layers were partially relaxed and the degree of relaxation decreased with increasing Al-compn. of AlGaN channel layers. Therefore the misfit dislocations in the high Al-compn. HEMTs were considered to be lower than those in the low Al-compn. HEMTs. Furthermore, it was revealed that very high Al-compn. of AlGaN barrier layers can be grown coherently on the AlGaN channel layers in consequence of the partly relaxation of the AlGaN channel layers, which of lattice consts. of a-axis were smaller than that of fully relaxed AlGaN channel layers. Therefore very high carrier concn. of 2DEG can be obtained in spite of the high Al-compn. of AlGaN channel layers. We considered that this high carrier concn. of 2DEG was necessary to demonstrate high Al-compn. AlGaN-channel HEMTs.

    DOI: 10.1002/pssc.201100289

  388. Progress and prospect of the growth of wide-band-gap group III nitrides: development of the growth method for single-crystal bulk GaN Reviewed

    Hiroshi Amano

      Vol. 81 ( 6 ) page: 455-463   2012.6

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  389. Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates Reviewed

    Kouta Yagi, Mitsuru Kaga, Kouji Yamashita, Kenichirou Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   Vol. 51   page: 051001   2012.5

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    We have demonstrated crack-free 30-pair-AlN/GaN distributed Bragg reflectors (DBRs) grown on AlN templates for the first time. A reasonably high reflectivity of 97.5% was obtained. X-ray diffraction measurements revealed that the AlN templates cause compressive stress in DBRs. At the same time, the AlN/GaN DBRs were found to relax to average AlGaN alloys with AlN mole fractions determined by the thickness ratio of the AlN layer to one pair of AlN and GaN in DBRs regardless of the underlying template, AlN or GaN.

    DOI: 10.1143/JJAP.51.051001

  390. Growth of GaN and AlGaN on (100) beta-Ga2O3 substrates Reviewed

    Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

      Vol. 9 ( 3-4 ) page: 519-522   2012.5

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    The crystalline quality of GaN and Al0.08Ga0.92N epitaxial layers on (100) β-Ga2O3 substrates was significantly improved by the facet-controlled growth method. The facets were controlled by changing the nitrogen ambient thermal annealing temperature. We demonstrated the highcrystalline-quality GaN and Al0.08Ga0.92N on β-Ga2O3 substrates, which were comparable to GaN and AlGaN on sapphire substrates using low-temperature buffer layers.
    This method is useful for the fabrication of verticaltype ultraviolet (UV) light-emitting diodes (LEDs) on β-Ga2O3 substrates.

    DOI: 10.1002/pssc.201100499

  391. Properties of nitride-based photovoltaic cells under concentrated light illumination Reviewed

    Shota Yamamoto, Mikiko Mori, Yosuke Kuwahara, Takahiro Fujii, Tatsuo Nakao, Shinichiro Kondo, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

    Physica Status Solidi Rapid Research Letter   Vol. 6 ( 4 ) page: 145-147   2012.4

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    We investigated the properties of nitride-based solar cells under concentrated light illumination from 1 to 200 suns. The conversion efficiency of our solar cells increased with increasing concentration up to 200 suns. The short-circuit cur- rent density, open-circuit voltage, fill factor, and conversion efficiency were 510 mA/cm2, 1.9 V, 70%, and 3.4%, respectively, under an air mass filter of 1.5G at 200 suns and room temperature. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

    DOI: DOI: 10.1002/pssr.201206038

  392. Development of AlN/diamond heterojunction field effect transistors Reviewed

    Masataka Imura, Ryoma Hayakawa, Hirotaka Ohsato, Eiichiro Watanabe, Daiju Tsuya, Takahiro Nagata, Meiyong Liao, Yasuo Koide, Jun-ichi Yamamoto, Kazuhito Ban, Motoaki Iwaya, Hiroshi Amano

    Diamond and Related Materials   Vol. 24   page: 206-209   2012.4

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    AlN/diamond heterojunction field effect transistors with p-channel and normally-on depletion mode are developed, and the device performance is improved by reducing the contact resistances at source and drain contacts reported previously. The heterojunction structure is constructed from a c-axis-oriented AlN epilayer grown on oxygen-terminated (111) diamond substrate by metal-organic vapor phase epitaxy at temperatures as high as 1250 °C. Thermal treatment in the mixed hydrogen (H2) and ammonia atmosphere just before AlN growth improves the AlN adhesion to diamond surface. In addition, this treatment simultaneously produces a much larger surface hole-carrier density than that obtained by conventional H2-plasma treatment. X-ray photoelectron spectroscopy reveals the existence of carbon-nitrogen bonds at the diamond surface, and these may be responsible for such a large hole density. These results are promising in relation to new opportunities for developing diamond-based power electronic devices.

  393. Indium-Tin Oxide/Al eflective Electrodes for Ultraviolet Light-Emitting Diodes Reviewed

    Kosuke Takehara, Kenichiro Takeda, Shun Ito, Hiroki Aoshima, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 51   page: 042101   2012.4

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    DOI: 10.1143/JJAP.51.042101

  394. Indium-Tin oxide/Al reflective electrodes for ultraviolet light-emitting diodes Reviewed

    Takehara, Kosuke; Takeda, Kenichiro; Ito, Shun; Aoshima, Hiroki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

      Vol. 51 ( 4 ) page: 042101/1-042101/4   2012.4

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    We investigated indium-tin oxide (ITO)/Al reflective electrodes for improving the light extraction efficiency of UV light-emitting diodes (LEDs). The ITO layer showed high transparency in the UV region upon optimization of the thickness and annealing temperature. As a result, the ITO/Al electrode exhibited both high reflectivity in the UV region and good contact characteristics simultaneously. Using this electrode, we succeeded in improving the light output power of a 350 nm UV-A LED.

    DOI: 10.1143/JJAP.51.042101

  395. Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate Reviewed

    Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Nobuhiko Sawaki

    Physica Status Solidi b   Vol. 249   page: 468-471   2012.3

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    DOI: DOI: 10.1002/pssb.201100445

  396. Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers Reviewed

    Hashimoto Shin; Akita Katsushi; Yamamoto Yoshiyuki, HIroshi Amano

    Physica Status Solidi a   Vol. 209   page: 501-504   2012.3

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    DOI: DOI: 10.1002/pssa.201100379

  397. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Reviewed

    Tetsuhiko Inazu, Shinya Fukahori, Cyril Pernot, Myung Hee Kim, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Masahito Yamaguchi, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Japanese Journal of Applied Physics   Vol. 50   page: 122101   2011.12

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    AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with aluminum reflective electrodes deposited to cover both p- and n-mesh contact electrodes have been fabricated. A 1.55-fold increase in light extraction efficiency has been demonstrated. Despite their reduced contact area, the LEDs exhibited only a slight increase in forward voltage of 0.45 V at 20 mA. Also, their 50% lifetime was estimated to be about 10,000 h at 20 mA DC at room temperature by extrapolation. Owing to the reflective electrodes, a 288 nm LED with external quantum efficiency as high as 5.4% was achieved. The light output power was 4.6 mW at 20 mA.

    DOI: 10.1143/JJAP.50.122101

  398. Dependence of Resonance Energy Transfer on Exciton Dimensionality Reviewed

    Jan Junis Rindermann, Galia Pozina, Bo Monemar, Lars Hultman, Hiroshi Amano, and Pavlos G. Lagoudakis

    Physical Review Letters   Vol. 107   page: 236805   2011.11

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    We investigate the dependence of resonance energy transfer from Wannier-Mott excitons to an organic overlayer on exciton dimensionality. We exploit the excitonic potential disorder in a single quantum well to tune the balance between localized and free excitons by scaling the Boltzmann distribution of excitons through temperature. Theoretical calculations predict the experimentally observed temperature dependence of resonance energy transfer and allow us to quantify the contribution of localized and free excitons. We show that free excitons can undergo resonance energy transfer with an order of magnitude higher rate compared to localized excitons, emphasizing the potential of hybrid optoelectronic devices utilizing resonance energy transfer as a means to overcome charge transfer related limitations.

  399. Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate Reviewed

    Tatsuro Nakao, Takahiro Fujii, Toru Sugiyama, Shota Yamamoto, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano

    Applied Physics Express   Vol. 4   page: 101001   2011.10

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    We fabricated and characterized a nonpolar a-plane nitride-based solar cell on an r-plane sapphire substrate. The maximum external quantum efficiency of the solar cell reached 62% at a wavelength of approximately 400 nm. The open-circuit voltage, the short-circuit current density, and the fill factor of the solar cell were 0.9 V, 4.8 mA/cm2, and 57%, respectively. A conversion efficiency of 1.6% was obtained from the solar cell under a solar simulator of air mass 1.5 G and an irradiation intensity of 155 mW/cm2 at room temperature. ©2011 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.4.101001

  400. AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Reviewed

    Myunghee Kim, Takehiko Fujita, Shinya Fukahori, Tetsuhiko Inazu, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Masahito Yamaguchi, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki

    Applie Physics Express   Vol. 4   page: 092102   2011.9

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    DOI: 10.1143/APEX.4.092102

  401. AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage Reviewed

    Yoshinori Oshimura, Takayuki Sugiyama, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Japanese Journal of Applied Physics   Vol. 50   page: 084102   2011.8

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    lGaN/GaN heterostructure field-effect transistors (HFETs) were fabricated by metalorganic vapor phase epitaxy (MOPVE) on c-plane Fe-doped GaN (GaN:Fe) substrates with different growth conditions of GaN buffer layers. The GaN buffer layers were grown at a V/III ratio of 272 at 300 Torr to realize highly resistive GaN buffer layers with automatic carbon doping. HFETs with carbon-doped GaN buffer layers showed the best characteristics among all the samples in this study. The carbon concentration was 5×1016 cm-3. In the sample with a gate-drain length of 50 µm, the off-state breakdown voltage was 2 kV or higher and the on-resistance was 18.5 mΩ·cm2. We found that the carbon-doped GaN buffer layers are necessary for high breakdown voltages even using semi-insulating GaN:Fe substrates.

  402. Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN Reviewed

    S. Khromov, C. G. Hemmingsson, H. Amano, B. Monemar, L. Hultman, and G. Pozina

    Pysical Review   Vol. B84   page: 075324   2011.8

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    DOI: 10.1103/PhysRevB.84.075324

  403. Reduction in threshold current density of 355 nm UV laser diodes Reviewed

    Nagata, Kengo; Takeda, Kenichiro; Nonaka, Kentaro; Ichikawa, Tomoki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Yoshida, Harumasa; et al

    Physica Status Solidi C   Vol. 8 ( 5 ) page: 1564-1568   2011.8

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    We have investigated the characteristics of 355 nm UV laser diodes. Two laser diode structures were prepd. on a grooved AlGaN template as well as on a flat AlGaN template. The threading dislocation densities on the grooved and flat AlGaN were 2.5 × 108 cm-2 and 6.5 × 109 cm-2, resp. The threshold c.d. of the laser diode on the grooved AlGaN was 6 kA/cm2, while no lasing was obsd. from the laser diode on the flat AlGaN. We also estd. the internal quantum efficiency as well as the injection efficiency in the UV laser diode structures by considering internal quantum efficiency of both optical and elec. excitation. At a carrier d. of 1.2 × 1019 cm-3, the internal quantum efficiency of the laser diode structure on the grooved AlGaN was about 50%. This is twice that of the laser diode on the flat AlGaN. At the same time, the internal quantum efficiency estd. from the optical excitation also reached about 50%, even at a carrier d. of 3 × 1018 cm-3. This implies that the injection efficiency in our UV laser diode structure was only 25%. Improving the injection efficiency should be effective for significantly reducing the threshold c.d.

  404. GaInN-based solar cells using GaInN/GaInN superlattices Reviewed

    Fujii, Takahiro; Kuwahara, Yousuke; Iida, Daisuke; Fujiyama, Yasuhara; Morita, Yoshiki; Sugiyama, Toru; Isobe, Yasuhiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; et al

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2463-2465   2011.7

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    We report on the fabrication of GaInN-based solar cells using GaInN/GaInN superlattices as active layers and also as underlying layers beneath the active layers. We obtained pit-free surfaces, even with a high InN molar fraction, using the superlattices. As a result, the max. external and internal quantum efficiencies reached 60%, and 88%, resp. The open-circuit voltage of the soalr cells was 1.77 V, the short-circuit c.d. was 3.08 mA/cm2, and the fill factor was 70.3%. A conversion efficiency of 2.46% was achieved at room temp. under simulared 1.5 sun × AM1.5G illumination using a solar simulator.

  405. Injection efficiency in AlGaN-based UV laser diodes Reviewed

    Nagata, Kengo; Takeda, Kenichiro; Oshimura, Yoshinori; Takehara, Kosuke; Aoshima, Hiroki; Ito, Shun; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; et al

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2384-2386   2011.7

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    We evaluated AlGaN-based 355 nm UV laser diodes prepd. under two different Mg activation conditions. The annealing processes for Mg activation in p-layers were carried out under N2 or O2 ambient to investigate the effect of the ambient gas on the laser characteristics. The threshold current densities and operating voltages of the UV laser diodes were improved by annealing under O2 compared with those under N2. We then estd. the injection efficiencies of the laser diode structures by considering the internal quantum efficiencies of optical excitation and elec. excitation. The internal quantum efficiency of the elec. excited spontaneous emission from the laser structure annealed under O2 reached 50% at a carrier d. of 7.0 × 1018 cm-3, while the structure annealed under N2 required a 1.8-fold higher carrier d. of 1.2 × 1019 cm-3 to reach the same internal quantum efficiency. In addn., the internal quantum efficiency estd. from optical excitation reached 50% even at a carrier d. of 3.0 × 1018 cm-3. This implies that the injection efficiencies in the UV laser diode structures annealed under N2 and O2 were 25% and 45%, resp. Mg activation by O2 annealing is effective for increasing the injection efficiency.

  406. Low leakage current in AlGaN/GaN HFETs with preflow of Mg source before growth of u-GaN buffer layer Reviewed

    Oshimura, Yoshinori; Sugiyama, Takayuki; Takeda, Kenichiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Physica Status Solidi A   Vol. 208 ( 7 ) page: 1607-1610   2011.7

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    AlGaN/GaN heterostructure field-effect transistors were grown by metalorg. vapor phase epitaxy on Fe-doped GaN substrates with a preflow of the Mg source. We realized a low drain leakage current, 1.05 μA/mm, at VDS = 20 V and VGS = -5 V with LGD = 3 μm. This leakage current was one order of magnitude lower than that obtained without a preflow of the Mg source. The breakdown voltage was over 250 V with LGD = 10 μm. The on resistance was estd. to be 3.6 mΩ cm2. No significant redistribution or memory effect of Mg was obsd. by secondary ion mass spectroscopy measurement.

  407. Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate Reviewed

    Murase, Tasuku; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2160-2162   2011.7

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    A smooth laser structure on (1-101) GaN microstripes was successfully fabricated on a patterned (100) 8°-off Si substrate. The sample has a high internal quantum efficiency (IQE) compared with blue LEDs on a sapphire substrate. The high-d. excitation PL spectrum obsd. from the cross section of the sample shows marked narrowing, and the integral PL intensity also shows a steep increase. These results indicate the onset of stimulated emission from an InGaN-based multi quantum well (MQW) active layer on (1-101) GaN (100) Si. To the best of our knowledge, this is the first report of the observation of a stimulated emission from a (1-101) MQW on a Si substrate. We succeeded in fabricating and verifying the high-quality laser structure on semipolar (1-101) GaN on a Si substrate.

  408. Optimization of initial MOVPE growth of non-polar m- and a-plane GAN on Na flux grown LPE-GaN substrates Reviewed

    Isobe, Yasuhiro; Iida, Daisuke; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Imade, Mamoru; Kitaoka, Yasuo; et al

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2095-2097   2011.7

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    We optimized the initial GaN growths of nonpolar m- and a-plane GaN grown on liq. phase epitaxy (LPE-) GaN substrates. Such nonpolar LPE-GaN substrates were produced by cutting slices from c-plane LPE-GaN bulk single crystals grown by the Na-flux method. We investigated the qualities of epitaxially grown GaN layers on the LPE-GaN substrates, with different polishing methods, which are chem. mech. polishing and plasma dry etch polishing. We found that the cryst. quality of epitaxial GaN on m-plane GaN is very sensitive to the surface polishing even the minute unevenness in GaN substrate. Our expts. also indicated that a low initial growth rate was necessary to obtain high-cryst.-quality epitaxial m-plane GaN. In contrast, high-cryst.-quality a-plane GaN was obtained even with a high initial growth rate, indicating that the cryst. quality of a-plane GaN is not sensitive to surface roughness.

  409. Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes Reviewed

    Tanikawa, Tomoyuki; Murase, Tasuku; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2038-2040   2011.7

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    We demonstrated the effects of growth conditions such as growth pressure and growth temp. during the selective growth of InGaN/GaN multiple quantum wells (MQWs) on semipolar GaN microstripes on Si substrates. Grown layers exhibited the ridge growth, which indicates the thickness fluctuation, owing to the source supply from the apexes of the GaN microstructure. Ridge growth was suppressed by increasing growth pressure and decreasing growth temp. Cathode luminescence (CL) anal. showed uniform luminescence. As a result, high pressure and low temp. are suitable for obtaining uniform heterostructures in the selective growth of InGaN/GaN MQWs on GaN microstripes.

  410. Transparent electrode for UV light-emitting-diodes Reviewed

    Takehara, Kosuke; Takeda, Kenichiro; Nagata, Kengo; Sakurai, Hisashi; Ito, Shun; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2375-2377   2011.7

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    We have investigated the transparent electrodes using indium tin oxide (ITO) for UV light-emitting diodes (LEDs). The carrier concn. of ITO was increased from 1.1 × 1018 to 1.5 × 1021 cm-3 after annealing under N2 ambient at 600 °C. The fundamental absorption edge was also shifted to a shorter wavelength owing to the increase in carrier concn., through the so-called the Burstein-Moss effect. The annealed ITO forms an ohmic contact with p-GaN with a specific contact resistance of 1.2 × 10-3 Ωcm2. The light output power of a 350 nm LED with the annealed ITO contact is 1.2 times higher than that with a conventional Ni/Au contact.

  411. Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed

    Sugiyama, Takayuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Oshimura, Yoshinori; Iida, Daisuke; Iwaya, Motoaki; Akasaki, Isamu

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2424-2426   2011.7

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    We measured the drain bias stress effects in normally off mode AlGaN/GaN (JHFETs) with a p-GaN gate, whose AlGaN barrier was exposed to air by dry etching. A large current collapse and a memory effect decreased the drain current (IDS). IDS of an unpassivated sample became the off leakage level of normally off mode JHFETs at a drain stress bias of 15 V. On the other hand, IDS in SiN-passivated JHFETs decreased at a slow rate upon applying drain stress bias. The decrease in IDS in SiN-passivated JHFETs was almost the same as that in asgrown HFETs. These drain stress and memory effects were perfectly deletable by light exposure, and were rewritable similarly in an EPROM.

  412. Achieving high-growth-rate in GaN homoepitaxy using high-density nitrogen radical source Reviewed

    Kawai, Yohjiro; Chen, Shang; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Kondo, Hiroki; Hirmatsu, Mineo; Kano, Hiroyuki; Yamakawa, Koji; Den, Shoji; et al

    Physica Status Solidi C   Vol. 8 ( 7-8 ) page: 2089-2091   2011.7

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    The key issue in GaN growth by radio-frequency plasma-assisted mol. beam epitaxy is the low growth rate compared with that obtained using an ammonia source. To reduce the processing time and to improve the cryst. quality of the epilayer, a high-d. radical source (HDRS) with high stability has been developed. The growth rate of the GaN epilayer was improved using the HDRS rather than a conventional radical source. During the growth, a sharp streak pattern obtained by RHEED was maintained. An atomically smooth surface was confirmed by at. force microscopy observation.

  413. AlGaN/GaInN/GaN heterostructure field-effect transistor Reviewed

    Ikki, Hiromichi; Isobe, Yasuhiro; Iida, Daisuke; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Bandoh, Akira; Udagawa, Takashi

    Physica Status Solidi A   Vol. 208 ( 7 ) page: 1614-1616   2011.7

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    We report on the elec. properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier d. of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 × 1013 cm-2 at an InN molar fraction of 0.60. The Al0.30Ga0.70N/Ga0.40In0.60N heterostructure exhibited static field-effect transistor (FET) characteristics.

  414. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes Reviewed

    Pernot, Cyril; Fukahori, Shinya; Inazu, Tetsuhiko; Fujita, Takehiko; Kim, Myunghee; Nagasawa, Yosuke; Hirano, Akira; Ippommatsu, Masamichi; Iwaya, Motoaki; Kamiyama, Satoshi, Amano Hiroshi; et al

    Physica Status Solidi A:   Vol. 208 ( 7 ) page: 1594-1596   2011.7

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    We report on the fabrication and characterization of high efficiency UV light emitting diodes (LEDs) with emission wavelength ranging from 255 to 355 nm. Epi-layers of UV LEDs were grown on AlGaN templates with sapphire substrates. Flip-chip configuration without removing sapphire is used for characterization of the UV LEDs. External quantum efficiencies (EQEs) over 3% were obtained for all the investigated wavelengths with max. value reaching 5.1% for 280 nm LED. Under RT DC operation at a current of 500 mA, output powers of 38, 77, and 64 mW were measured for 257, 280, and 354 nm, resp. By using enhanced light extn. technologies, such as, moth-eye structure on the back side of the sapphire substrate, we expect to improve these values by up to 50%.

  415. Nonpolar a-plane AlGaN/GaN heterostructure field-effect transistors grown on freestanding GaN substrate Reviewed

    Isobe, Yasuhiro; Ikki, Hiromichi; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Sugiyama, Takayuki; Amano, Hiroshi; Imade, Mamoru; et al

    Applied Physics Express   Vol. 4 ( 6 ) page: 064102/1-064102/3   2011.6

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    We fabricated and characterized nonpolar a-plane AlGaN/GaN heterostructure field-effect transistors (HFETs) grown on an a-plane freestanding GaN substrate. By optimizing the growth conditions, the unintentionally doped oxygen concn. was much reduced in the a-plane GaN buffer layer. As a result, the low leakage current in the buffer layer was realized without doping of deep acceptors, such as Fe and C, by which an impurity-contamination-free channel layer can be successfully grown.

  416. Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes Reviewed

    Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    Physica Status Solidi A   Vol. 208 ( 5 ) page: 1175-1178   2011.5

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    We investigated the InGaN/GaN multiple quantum well (MQW) thickness and cathode luminescence (CL) distribution on nonpolar (11-20)GaN, semipolar (11-22)GaN, and (1-101)GaN microstripes grown by selective metal-org. vapor phase epitaxy (MOVPE) on patterned Si substrates. All samples exhibited ridge growth. To clarify the effect of vapor phase diffusion, the two-dimensional diffusion equation was solved. The results were in good agreement with the thickness distribution on the (11-20)GaN stripe when we assumed D/k0 to be 1 μm. However, the results were not in agreement for the semipolar case. On the semipolar face, the surface migration length might be greater, thus increasing the thickness nonuniformity. CL anal. indicated a uniform indium compn. on the (11-20) and (11-22) faces. On the (1-101)GaN stripe, the indium compn. decreased near the (0001) edge. Excess Ga is considered to affect the compositional nonuniformity on the (1-101) facet.

  417. Evidence for moving of threading dislocations during the VPE growth in GaN thin layers Reviewed

    Kuwano, Noriyuki; Miyake, Hideto; Hiramatsu, Kazumasa; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C   Vol. 8 ( 5 ) page: 1487-1490.   2011.5

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    Cross-sectional transmission electron microscope (TEM) observation was performed in detail to analyze the morphol. of threading dislocations (TDs) in GaN thin layers with various thicknesses. The GaN layers were overgrown on an Al0.28Ga0.72N layer by the metal-org. vapor-phase epitaxy (MOVPE) method. In a GaN layer about 50 nm in thickness, TDs running up in the AlGaN layer pass into the GaN layer and most of them reach the top surface without bending. In thicker GaN layers, on the other hand, many of TDs form a hairpin-configuration on or above the interface of GaN and AlGaN to be annihilated. This difference in morphol. of TDs indicates that the TDs have moved down inside the GaN layer. Since the formation of hairpins is attributed to a stress-relief, there should be an extra half-plane between the paired TDs. Therefore, the movement of TDs should be of "climb motion". Another example of possible TD movement inside a GaN layer is also described. It is emphasized that the possibility of TD-movements inside the thin film crystal during the growth should be taken into account in anal. of thin-layer growth through the behavior of TDs.

  418. Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method Reviewed

    Isobe, Yasuhiro; Iida, Daisuke; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Imade, Mamoru; Kitaoka, Yasuo; et al

    Physica Status Solidi A   Vol. 208 ( 5 ) page: 1191-1194   2011.5

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    We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal m-plane free-standing GaN substrates prepd. by the Na flux method. The miscut angle in the LPE-GaN substrate has a great influence on the surface morphol. and cryst. quality of epitaxial GaN and AlGaN films. In particular, AlGaN/GaN on a 4° miscut-angle LPE-GaN substrate shows large step bunching, small-miscut-angle LPE GaN substrate is essential for fabricating on FET structure with a flat surface.

  419. Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells Reviewed

    Ban, Kazuhito; Yamamoto, Jun-ichi; Takeda, Kenichiro; Ide, Kimiyasu; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   Vol. 4 ( 5 ) page: 052101/1-052101/3   2011.5

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    We analyze the internal quantum efficiency (IQE) of whole-compn.-range AlGaN multiquantum wells (MQWs) on AlGaN with various dislocation densities (DDs) by excitation-d.-dependent photoluminescence measurement. IQEs of deep UV/UV (DUV/UV) MQWs are strongly dependent on the DD. IQE with an excess carrier d. of 1 × 1018 cm-3 changes from 4 to 64% when the DD changes from 6 × 109 to 2 × 108 cm-2. This trend is almost the same for DUV/UV MQWs with emission wavelength ranging from 230 to 350 nm. Thus, the redn. of the DD is very important for the realization of a high-IQE DUV/UV active layer.

  420. Microstructural analysis of thick AlGaN epilayers using Mg-doped AlN underlying layer Reviewed

    Nonaka, K.; Asai, T.; Ban, K.; Yamamoto, J.; Iwaya, M.; Takeuchi, T.; Kamiyama, S.; Akasaki, I.; Amano, H.; Wu, Z. H.

    Physica Status Solidi C   Vol. 8 ( 5 ) page: 1467-1470   2011.5

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    This paper reports the microstructural anal. of 20-μm-thick Al0.5Ga0.5N with improved cryst. quality owing to the use of a Mg-doped AlN underlying layer. The threading dislocation d. in 20-μm-thick Al0.5Ga0.5N on Mg-doped AlN was 8.6 × 108 cm-2, which is about one-fifth lower than that of Al0.5Ga0.5N on an undoped AlN underlying layer. The microstructural anal. was carried out to clarify dislocation behaviors in the Al0.5Ga0.5N layer on the Mg-doped AlN underlying layer.

  421. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1-101) semipolar GaN Reviewed

    Wu, Z. H.; Tanikawa, T.; Murase, T.; Fang, Y.-Y.; Chen, C. Q.; Honda, Y.; Yamaguchi, M.; Amano, H.; Sawaki, N.

    Applied Physics Letters   Vol. 98 ( 5 ) page: 051902/1-051902/3   2011.5

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    The authors have studied the structural properties and relaxation phenomenon of InGaN multiple quantum wells (QWs) on (1.hivin.101) semipolar GaN templates grown on patterned (001) Si substrates by selective area growth technique. Studies by TEM and x-ray diffraction reciprocal space mapping reveal that QWs emitting light at 540 nm experience significant strain relaxation along the in-plane [1.hivin.10.hivin.2] direction by the generation of an array of basal stacking faults (BSF). The generation of BSFs in 540 nm QWs could be an important factor limiting its luminescence efficiency.

  422. Freestanding highly crystalline single crystal AlN substrates grown by a novel closed sublimation method Reviewed

    Yamakawa, Masayasu; Murata, Kazuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Azuma, Masanobu

    Applied Physics Express   Vol. 4 ( 4 ) page: 045503/1-045503/3   2011.4

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    We fabricated thick freestanding AlN films by a novel close-spaced sublimation method. The spacing between a sintered AlN polycrystal and a SiC substrate is 1 mm. A Ta ring was used to control the spacing between the AlN polycrystal and the SiC substrate. In addn., a special AlN adhesive was also used to fill in the gap between the AlN polycrystal, the Ta ring, and the SiC substrate. By a combination of these techniques, an AlN growth rate as high as 600 μm/h was achieved. A freestanding AlN layer was obtained by the sublimation of the SiC substrate during the AlN growth.

  423. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed

    Wu, Z. H.; Kawai, Y.; Fang, Y.-Y.; Chen, C. Q.; Kondo, H.; Hori, M.; Honda, Y.; Yamaguchi, M.; Amano, H.

    Applied Physics Letters   Vol. 98 ( 14 ) page: 141905/1-141905/3   2011.3

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    Structural properties of thick InGaN layers grown on GaN by plasma-assisted mol. beam epitaxy using two growth rates of 1.0 and 3.6 Å/s have been investigated. A highly regular superlattice (SL) structure formed spontaneously in the film grown at 3.6 Å/s but not in the film grown at 1.0 Å/s. The faster grown film also exhibited superior structural quality, which could be due to the surface roughness suppression caused by kinetic limitation, and the inhibition of the Frank-Read dislocation generation mechanism within the spontaneously formed SL structure.

  424. Demonstration of diamond field effect transistors by AlN/diamond heterostructure Reviewed

    Imura, Masataka; Hayakawa, Ryoma; Watanabe, Ei-Ichiro; Liao, Mei-Yong; Koide, Yasuo; Amano, Hiroshi

    Physica Status Solidi RRL:   Vol. 5 ( 3 ) page: 125-127.   2011.3

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    This is the first report on an AlN/diamond heterojunction field effect transistor (HFET). The AlN epilayer is grown on oxygen-terminated (111) diamond substrates using metalorg. vapor phase epitaxy at a temp. as high as 1240 °C. The transistor and gate capacitance-voltage characteristics indicate that the HFET behaves as a p-channel FET with a normally-on depletion mode. The HFET channel is located at the AlN/diamond interface, and holes are accumulated in diamond close to the interface. The development of the AlN/diamond HFET creates a new possibility for diamond-based power electronics.

  425. Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency Reviewed

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Amano, H.; Pearton, S. J.; Lee, I.-H.; Sun, Q.; Han, J.; Karpov, S. Yu.

    Applied Physics Letters   Vol. 98 ( 7 ) page: 072104/1-072104/3   2011.2

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    The correlation of integrated microcathodoluminescence efficiency with cryst. quality and deep trap d. of nonpolar GaN films grown by metal org. CVD on semi-insulating 6H-m-SiC or r-sapphire is analyzed. The results suggest a strong influence of nonradiative recombination centers whose concn. decreases with decreased d. of extended defects. Electron traps with energy levels at Ec-0.6 eV and which pin the Fermi level in films with high defect d. are the most likely candidates for the decrease in light emission efficiency in nonpolar GaN.

  426. GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate Reviewed

    Kuwahara, Yousuke; Fujii, Takahiro; Sugiyama, Toru; Iida, Daisuke; Isobe, Yasuhiro; Fujiyama, Yasuharu; Morita, Yoshiki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi, Amano Hiroshi; et al

    Applied Physics Express   Vol. 4 ( 2 ) page: 021001/1-021001/3   2011.2

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    High-performance GaInN-based solar cells with high open-circuit voltage, high short-circuit c.d., and good fill factor have been obtained using a combination of two different GaInN superlattice structures. The GaInN barrier thicknesses (3 and 0.6 nm) in both superlattice structures were optimized, resulting in a thick GaInN-based active layer with a low pit d. in the device. The conversion efficiency is 2.5% under a solar simulator of air-mass 1.5G and an irradn. intensity of 155 mW/cm2.

  427. Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer Reviewed

    Takeda, Kenichiro; Nagata, Kengo; Ichikawa, Tomoki; Nonaka, Kentaro; Ogiso, Yuji; Oshimura, Yoshinori; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; et al

    Physica Status Solidi C   Vol. 8 ( 2 ) page: 464-466   2011.2

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    We fabricated and evaluated GaN/AlGaN multi-quantum wells (MQWs) and UV laser diodes (UV LDs) on high and low dislocation d. underlying layers by epitaxial lateral overgrowth (ELO) method. We analyzed the internal quantum efficiency (IQE) vs. carrier concn. characteristics quant. by excitation intensity dependent photoluminescence method. The IQE of the MQWs on the ELO AlGaN is 75% when the carrier d. is 1 × 1019 cm-3. We demonstrated the UV LD on the ELO AlGaN. However, the UV LD on flat AlGaN did not operate. Also, we investigated the internal loss (α1) and the IQE multiplied the injection efficiency by changing the reflectivity of the facets. The results showed that the internal loss is 6 cm-1, and the IQE multiplied by the injection efficiency is 18%

  428. Drastic reduction of dislocation density in semipolar (11-.22) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy Reviewed

    Murase, Tasuku; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Sawaki, Nobuhiko

    Japanese Journal of Applied Physics   Vol. 50 ( 1 ) page: 01AD04/1-01AD04/3.   2011.1

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    A drastic redn. of the dislocation d. in a semipolar (11.hivin.22) GaN stripe on a patterned Si substrate was achieved by the 2-step selective growth of a GaN stripe. After depositing a SiO2 mask on the (11.hivin.22) and (000.hivin.1) faces of a GaN stripe grown on a (113) Si substrate, GaN was regrown only on the (.hivin.1.hivin.122) face. The dislocation d. estd. from the dark-spot d. in a cathodoluminescence (CL) image greatly decreased from 4.0 × 108 to 1.0 × 105/cm2 in the regrowth region. A TEM image also verified that there were no dislocations at the regrowth interfaces.

  429. High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed

    Sugiyama, Takayuki; Amano, Hiroshi; Iida, Daisuke; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu

    Japanese Journal of Applied Physics   Vol. 50 ( 1 ) page: 01AD03/1-01AD03/3   2011.1

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    We demonstrated the high-temp. operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 °C. The temperture dependence of their performance was compared with the results of simulation.

  430. MBE-VLS growth of catalyst-free III-V axial heterostructure nanowires on (1 1 1)Si substrates Reviewed

    Paek, Jihyun; Yamaguchi, Masahito; Amano, Hiroshi

    Journal of Crystal Growth   Vol. 323 ( 1 ) page: 315-318   2011.1

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    For application in novel opto-electronic nanowire devices, Ga-assisted GaAs/InxGa1-xAs axial heterostructure nanowires grown on a (1 1 1)Si substrate at a high In/Ga flux ratio were investigated. The increased diam. of the InxGa1-xAs region of the nanowire was obsd. from a SEM image. The In compn. of 0.01-0.02 of the InxGa1-xAs was shown by EDX point anal. The In concn. of 0.62 of an In-Ga alloy droplet was estd. from the diam. ratio of the InxGa1-xAs/GaAs region. From these results, it was considered that the excess In was collected in the droplet, resulting in an increased nanowire diam. The increased diam. of the InxGa1-xAs region was also discussed together with the results of thermodn. calcn.

  431. Microstructures of GaInN/GaInN superlattices on GaN substrates Reviewed

    Sugiyama, Toru; Kuwahara, Yosuke; Isobe, Yasuhiro; Fujii, Takahiro; Nonaka, Kentaro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   Vol. 4 ( 1 ) page: 015701/1-015701/3.   2011.1

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    We found different behaviors of misfit dislocations in a Ga0.83In0.17N single layer and in Ga0.83In0.17N/Ga0.93In0.07N superlattices, both on GaN substrates. In the case of the single layer, misfit dislocations were formed at the GaInN/GaN interfaces and extended through the GaInN layer to the surface. In contrast, the misfit dislocations in the superlattices are bent laterally at interfaces between the Ga0.83In0.17N and Ga0.93In0.07N layers. In addn., most of the dislocations do not reach the surface owing to the formation of dislocation loops. As a result, the dislocation d. at the surface of the GaInN superlattice sample was 5 × 107 cm-2.

  432. Realization of nitride-based solar cell on freestanding GaN substrate Reviewed

    Kuwahara, Yosuke; Fujii, Takahiro; Fujiyama, Yasuharu; Sugiyama, Tohru; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    Applied Physics Express   Vol. 3 ( 11 ) page: 111001/1-111001/3   2010.11

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    A p-i-n solar cell composed of an undoped GaInN layer sandwiched between n- and p-type GaN layers was grown on a freestanding c-plane GaN substrate and a c-plane sapphire substrate covered with a low-temp.-deposited buffer layer. The open-circuit voltage is 2.23 V, the fill factor is 61%, the short-circuit c.d. is 1.59 mA/cm2, and the conversion efficiency of the solar cell on the GaN substrate is 1.41% using a solar simulator (1.5 suns). Compared with the solar cell characteristics of the device grown on the sapphire substrate, pit d. markedly decreases. As a result, shunt resistance increases, suppressing the open-circuit voltage drop.

  433. Strain relaxation mechanisms in AlGaN epitaxy on AlN templates Reviewed

    Wu, Zhihao; Nonaka, Kentaro; Kawal, Yohjiro; Asai, Toshiaki; Ponce, Fernando A.; Chen, Changqing; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Applied Physics Express   Vol. 3 ( 11 ) page: 111003/1-111003/3   2010.11

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    Two strain relaxation processes have been obsd. in AGaN layers grown on thick AlN templates. In Process I, a type threading dislocations (TDs) with b = 1/3.ltbbrac.11.hivin.20.rtbbrac. from the AlN underlayer are inclined away from the [0001] axis toward the .ltbbrac.1.hivin.100.rtbbrac. directions when they enter the AlGaN film, forming dislocation line projection perpendicular to the Burger vector. In Process II, a + c-type TDs from the AlN underlayer with Burgers vector of b = 1/3.ltbbrac.11.hivin.23.rtbbrac. glide on {0.hivin.111} planes when they enter the AlGaN film to generate interfacial misfit dislocations lying along the .ltbbrac..hivin.2110.rtbbrac. directions at the AlGaN/AlN interface.

  434. Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy Reviewed

    Imura, Masataka; Ohnishi, Tsuyoshi; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Amano, Hiroshi; Lippmaa, Mikk

    Physica Status Solidi C   Vol. 7 ( 10 ) page: 2365-2367   2010.10

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    High-cryst. quality AlN layers with an atomically flat surface are grown on (0001) sapphire and 6H-SiC substrates by metal-org. vapor phase epitaxy at 1400 °C without low-temp. buffer layer. The polar direction of AlN layers is investigated by coaxial impact-collision ion scattering spectroscopy (CAICISS). For AlN growth on sapphire substrate, trimethylaluminum (TMAI) is supplied for 10 s before introducing ammonia (NH3). For AlN growth on SiC substrate, TMAl and NH3 are supplied at the same time. The CAICISS spectrum of AlN layers is analyzed by measuring the dependence of the Al atoms signal intensity on the angle of ion beam incidence considering the shadowing and focusing effects for detg. the polar direction of AlN layers. The CAICISS spectra clearly indicate the polar direction of AlN layers and both AlN layers are found to be had the Al-polarity.

  435. Atomic layer epitaxy of AlGaN Reviewed

    Nagamatsu, Kentaro; Iida, Daisuke; Takeda, Kenichiro; Nagata, Kensuke; Asai, Toshiaki; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C:   Vol. 7 ( 10 ) page: 2368-2370   2010.10

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    Atomic layer epitaxy of AlGaN with an av. growth rate of as high as 4.5 mm/h has been achieved by the high-speed switching-valves (HSSVs) technique in a raised-pressure metalorg. vapor phase epitaxy system. Regarding the duration of group III metalorgs. and NH3 gases input, 0.1 s for each injection time is found to be sufficient to realize AlGaN growth of one monolayer per cycle over a 2-in. wafer with hydrogen and nitrogen carrier gases at a raised pressure. Low-temp. growth of high-quality AlGaN has been achieved using HSSVs.

  436. GaInN/GaN p-i-n light-emitting solar cells Reviewed

    Fujiyama, Y.; Kuwahara, Y.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Physica Status Solidi C   Vol. 7 ( 10 ) page: 2382-2385.   2010.10

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    GaInN/GaN p-i-n double-heterojunction structures were grown by metal-org. vapor phase epitaxy on c-plane sapphire substrates, and light-emitting solar cells with different GaInN active layer thicknesses were fabricated. The thickness of the GaInN active layer was varied from 100 to 400 nm, while the thickness of both n-type and p-type GaN layers was kept const. A semitransparent ohmic contact to p-type GaN was formed by electron-beam evapn. of Ni/Au (5 nm/5 nm). The film thickness of p-GaN was 50 nm. The external quantum efficiency (EQE) of the device with a 400 nm GaInN layer exceeded 60% at a wavelength of approx. 380 nm. The transparency of the Ni/Au electrode was 68%. Therefore, the internal quantum efficiency of this device exceeded 95%. Note that this device emitted green light when a forward voltage was applied. The electroluminescence peak wavelength was approx. 525 nm, which was much longer than the EQE peak wavelength. The origin of this large emission shift is discussed.

  437. Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed

    Sugiyama, Takayuki; Iida, Daisuke; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C:   Vol. 7 ( 10 ) page: 2419-2422   2010.10

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    We demonstrated high-temp. operation of normally off-mode junction-heterostructure-field-effect transistors (JHFETs) with a p-GaN gate that shows a very small shift of the threshold voltage against ambient temp. Distinct normally off-mode operation with a max. drain current of 93.2 mA/mm at 300 °C was realized. Therefore, normally off-mode GaN-based JFETs are greatly superior to Si-based devices as high-temp. switching devices.

  438. Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate Reviewed

    Sugiyama, T.; Iida, D.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 1980-1982   2010.7

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    The threshold voltage (Vth) of normally off-mode AlGaN/GaN junction heterostructure field-effect transistors with a p-type GaN gate can be successfully controlled by inserting a SiNx insulator between the p-GaN and a Ni/Au electrode. The Vth can be controlled from +1 V to above +8 V. Moreover, the gate leakage current of transistors decreases and their gate voltage at which gate current steeply increases becomes higher. The mechanism of the threshold voltage change is analyzed by the equiv. circuit model.

  439. AlGaN/GaN HFETs on Fe-doped GaN substrates Reviewed

    Oshimura, Yoshinori; Takeda, Kenichiro; Sugiyama, Takayuki; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Bandoh, Akira; Udagawa, Takashi

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 1974-1976   2010.7

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    AlGaN/GaN HFETs with different undoped GaN thicknesses were grown on Fe-doped freestanding GaN substrates by conventional MOVPE. To realize a high drain current, thick undoped GaN is found to be necessary. SIMS measurement shows that Fe is redistributed into the epilayer, by which the scattering center is generated at the channel when the thickness of the undoped GaN is insufficient. We also obsd. a similar Fe profile in the GaN/sapphire template placed on the side of the Fe-doped GaN substrate during growth. Therefore, Fe in the Fe-doped GaN substrate is redistributed not only through a solid but also through vapor.

  440. Growth and characterization of GaN grown on moth-eye patterned sapphire substrates Reviewed

    Ishihara, Akihiro; Kawai, Ryousuke; Kitano, Thukasa; Suzuki, Atushi; Kondo, Toshiyuki; Iwaya, Motoaki; Amano, Hiroshi; Kamiyama, Satoshi; Akasaki, Isamu

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 2056-2058   2010.7

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    To realize high-efficiency light-emitting diodes (LEDs), it is necessary to increase light extn. efficiency. Therefore, the introduction of a moth-eye structure, which consists of periodic cones with a pitch of optical wavelength magnitude, into a sapphire surface before the epitaxial growth of nitride films is very promising for reducing the reflectivity of light resulting in high light extn. efficiency. 450 nm GaInN/GaN LEDs were fabricated on conventional and moth-eye substrates by metal org. vapor phase epitaxy (MOVPE). The intensity of room-temp. photoluminescence emitted from the LED with the moth-eye-patterned sapphire substrate was 1.6 times higher than that emitted from the LED without the moth-eye substrate. Under a current injection of 50 mA, the output power of the moth-eye LED is 3.6 times higher than that of the conventional LED.
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  441. Growth of GaInN by raised-pressure metalorganic vapor phase epitaxy Reviewed

    Iida, Daisuke; Nagata, Kensuke; Makino, Takafumi; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Bandoh, Akira; Udagawa, Takashi

    Applied Physics Express   Vol. 3 ( 7 ) page: 075601/1-075601/2   2010.7

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  442. Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer Reviewed

    Asai, T.; Nonaka, K.; Ban, K.; Nagata, K.; Nagamatsu, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 2101-2103   2010.7

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    We report on a new technol. for growing low-dislocation-d. AlGaN in which a Mg-doped AlN underlying layer is used. By growing AlxGa1-xN on AlN:Mg with AlN molar fractions x of 0.3, 0.5 and 0.7, the d. of misfit dislocations is much reduced compared with that in the case of growing AlGaN on undoped AlN. In addn., the surface becomes atomically flat.

  443. Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layers Reviewed

    Takeda, Kenichiro; Mori, Fumiaki; Ogiso, Yuji; Ichikawa, Tomoaki; Nonaka, Kentaro; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 1916-1918   2010.7

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    Internal quantum efficiency (IQE) of GaN/AlGaN multi quantum wells on the low dislocation d. Al0.25Ga0.75N grown by epitaxial lateral overgrowth (ELO) and facet controlled epitaxial lateral overgrowth were investigated by excitation intensity dependent photoluminescence measurement. The threading dislocation d. decreased from 4 × 109cm-2 to 2 × 108 cm-2 by using ELO method, then the IQE was much improved from 5% to 40% when the carrier d. was 1 × 1018 cm-3.

  444. Mg-related acceptors in GaN Reviewed

    Monemar, B.; Paskov, P. P.; Pozina, G.; Hemmingsson, C.; Bergman, J. P.; Amano, H.; Akasaki, I.; Figge, S.; Hommel, D.; et al.

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 1850-1852   2010.7

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    Photoluminescence spectra of c-plane Mg doped GaN samples grown by MOVPE on bulk GaN templates reveal previously unknown properties, like the presence of several Mg-related acceptors. The use of unstrained samples allows a study of both bound exciton (BE) and donor-acceptor pair (DAP) spectra. Two main acceptors A1 and A2 are obsd. strongly in BE spectra as well as in DAP spectra, they have similar binding energies, i.e. about 220 meV. The common assignment of the deeper blue PL emission at 2.8-3.0 eV to a deep donor-shallow acceptor transition is questioned, and discussed in connection with the compensation problem in p-GaN. It seems like the Fermi level in p-GaN is controlled by a set of Mg-related acceptors at energies 0.2-0.6 eV from the valence band top.

  445. Nitride-based light-emitting solar cell Reviewed

    Kuwahara, Y.; Fujiyama Y; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 1807-1809   2010.7

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    We report on the characteristics of a group-III-nitride-based solar cell. A GaInN/GaN double heterojunction p-i-n solar cell composed of a GaInN active layer sandwiched between n-type and p-type GaN layers was grown by metal-org. vapor phase epitaxy through an undoped GaN layer on (0001) sapphire substrate. The InN molar fraction of the GaInN active layer was detd. to be 11% from a secondary ion mass spectrometry profile. The max. external quantum efficiency reached 65%, and the internal quantum efficiency was 95% or more. This device emitted light after forward current injection. The PL peak almost corresponded to the absorption edge. However, the electroluminescence (EL) peak was at the wavelength much longer than the absorption edge. The open-circuit voltage is 1.51 V, the fill factor is 52%, and the short-circuit c.d. is 1.6 mA/cm2.

  446. Study of two-dimensional electron gas in AlGaN channel HEMTs with high crystalline quality Reviewed

    Hashimoto, Shin; Akita, Katsushi; Tanabe, Tatsuya; Nakahata, Hideaki; Takeda, Kenichiro; Amano, Hiroshi

    Physica Status Solidi C   Vol. 7 ( 7-8 ) page: 1938-1940   2010.7

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    Epitaxial structures of AlGaN channel high electron mobility transistors (HEMTs) were grown on sapphire and AlN substrates. Redn. in the full width at half max. of X-ray rocking curve for (10-12) peak of the AlGaN channel layer owing to the redn. of threading dislocation densities resulted in a sharp decrease in the sheet resistance of 2-dimensional electron gas (2DEG). In the case of AlGaN channel HEMTs, it was found that improvement of the cryst. quality of AlGaN channel layers is essential to the redn. of the sheet resistance of 2DEG. The use of AlN substrates resulted in improved cryst. quality of the AlGaN layer and lower 2DEG resistance, suggesting the high potential of AlN substrates for AlGaN channel HEMTs.

  447. Improved efficiency of 255-280 nm AlGaN-based light-emitting diodes Reviewed

    Pernot, Cyril; Kim, Myunghee; Fukahori, Shinya; Inazu, Tetsuhiko; Fujita, Takehiko; Nagasawa, Yosuke; Hirano, Akira; Ippommatsu, Masamichi; Iwaya, Motoaki; Kamiyama, Satoshi,Hiroshi Amano et al

    Applied Physics Express   Vol. 3 ( 6 ) page: 061004/1-061004/3   2010.6

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    We report on the fabrication and characterization of AlGaN-based deep UV light-emitting diodes (LEDs) with the emission wavelength ranging from 255-280 nm depending on the Al compn. of the active region. The LEDs were flip-chip bonded and achieved external quantum efficiencies of over 3% for all investigated wavelengths. Under cw operation, an output power of more than 1 mW at 10 mA was demonstrated. A moth-eye structure was fabricated on the back side of the Al2O3 substrate, and on-wafer output power measurement indicated a 1.5-fold improvement of light extn.

  448. Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy Reviewed

    Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Journal of Crystal Growth   Vol. 312 ( 21 ) page: 3131-3135.   2010.6

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    The elec. and optical properties of Mg-doped a- and c-plane GaN films grown by MOVPE were systematically investigated. The photoluminescence spectra of Mg-doped a- and c-plane GaN films exhibit strong emissions related to deep donors when Mg doping concns. are above 1 × 1020 cm-3 and 5 × 1019 cm-3, resp. The elec. properties also indicate the existence of compensating donors because the hole concn. decreases at such high Mg doping concns. In addn., we estd. the ND/NA compensation ratio of a- and c-plane GaN by variable-temp. Hall effect measurement. The obtained results indicate that the compensation effect of the Mg-doped a-plane GaN films is lower than that of the Mg-doped c-plane GaN films.

  449. Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO Reviewed

    Wu, Z. H.; Sun, K. W.; Wei, Q. Y.; Fischer, A. M.; Ponce, F. A.; Kawai, Y.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    Applied Physics Letters   Vol. 96 ( 7 ) page: 071909/1-071909/3   2010.3

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    The microstructure of m-plane InGaN epilayers grown on m-plane ZnO has been found to depend significantly on indium content in the range from 0.07 to 0.17, where anisotropic lattice mismatch between InGaN and ZnO results in decreasingly tensile and increasingly compressive stress along the a and c lattice axes. For indium content below 0.10, periodic arrays of misfit dislocations with a Burgers vector of 1/3[11-20] are obsd. parallel to the [0001] direction. For indium content above 0.12, generation of basal-plane stacking faults relieve the compressive stress along the 0001 direction. These characteristic mechanisms of strain relaxation should provide new approaches to engineer thick InGaN layers with reduced lattice misfit strain.

  450. Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy Reviewed

    Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

    Diamond and Related Materials   Vol. 19 ( 0 ) page: 131-133   2010.2

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    We investigate the microstructures of domain boundaries in an AlN layer grown on a (001) diamond substrate by metal-org. vapor phase epitaxy. The AlN layer has a two-domain structure with crystal orientation along either <112-0> AlN [named by AlNI domain] or <101-0> AlN [named by AlNII domain] parallel to [110] direction of diamond. The AlNI and AlNII domains are not atomically bonded at two-domain boundary from initial to final step of growth, while an edge-type dislocation is generated at single-domain boundary (SDB). In addn., an inversion AlNI domain [named by AlNI*] is randomly-ordered at the initial stage of the coalescence between the AlNI domains. The AlNI* is easily terminated with increasing the thickness of AlNI domain. The inversion domain boundary changes to the edge-type dislocation at the SDB with further growth, which reduces the defect d. in the AlNI domains.

  451. High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient Reviewed

    Nagata, Kengo, Ichikawa, Tomoki, Takeda, Kenichiro, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Physica Status Solidi A:   Vol. 207 ( 0 ) page: 1393-1396   2010

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  452. Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy Reviewed

    Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Iida, Daisuke; Tamura, Kenta; Iwaya, Motoaki; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu

    Journal of Crystal Growth   Vol. 312 ( 21 ) page: 3131-3135   2010

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  453. Defects in highly Mg-doped AlN Reviewed

    Nonaka, Kentaro, Asai, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Physica Status Solidi A   Vol. 207 ( 0 ) page: 1299-1301   2010

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  454. Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy Reviewed

    Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

    Journal of Crystal Growth   Vol. 312 ( 0 ) page: 368-372   2010

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  455. Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy Reviewed

    Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi

    Journal of Crystal Growth   Vol. 312 ( 0 ) page: 1325-1328   2010

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  456. P-type doping and defect generation in Group III nitride semiconductors Invited Reviewed

    Amano, Hiroshi; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu

    Nippon Kessho Seicho Gakkaishi   Vol. 36 ( 3 ) page: 200-204   2009.3

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  457. Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers Reviewed

    Murotani, Hideaki, Kuronaka, Takahiro, Yamada, Yoichi, Taguchi, Tsunemasa, Okada, Narihito, Amano, Hiroshi

    Journal of Applied Physics   Vol. 105 ( 0 ) page: 083533/1-083533/6   2009

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  458. Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films Reviewed

    Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Petrova, E. A., Amano, H., Kawashima, T., Scherbatchev, K. D., Bublik, V. T.

    Journal of Applied Physics   Vol. 105 ( 0 ) page: 063708/1-063708/9   2009

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  459. Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth Reviewed

    Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yakimov, E. B., Vergeles, P. S., Amano, H., Kawashima, T.

    Journal of Crystal Growth   Vol. 311 ( 0 ) page: 2923-2925   2009

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  460. Evidence for two Mg related acceptors in GaN Reviewed

    Monemar B, Paskov P P, Pozina G, Hemmingsson C, Bergman J P, Kawashima T, Amano H, Akasaki I, Paskova T, Figge S, et al

    Physical review letters   Vol. 102 ( 0 ) page: 235501/1-235501/4   2009

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  461. Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields Reviewed

    Esmaeili, M., Gholami, M., Haratizadeh, H., Monemar, B., Holtz, P. O., Kamiyama, S., Amano, H., Akasaki, I.

    Opto-Electronics Review   Vol. 17 ( 0 ) page: 293-299   2009

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  462. Growth of thick GaInN on grooved (1011) GaN/(1012) 4H-SiC Reviewed

    Matsubara, Tetsuya, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   Vol. 311 ( 0 ) page: 2926-2928   2009

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  463. High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer Reviewed

    Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, et al

    Physica Status Solidi A   Vol. 206 ( 0 ) page: 1199-1204   2009

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  464. InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy Reviewed

    Kawai, Yohjiro, Ohsuka, Shinya, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   Vol. 311 ( 0 ) page: 2929-2932   2009

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  465. Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN Reviewed

    Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.

    Applied Physics Express   Vol. 2 ( 0 ) page: 041002/1-041002/3   2009

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  466. Novel UV devices on high-quality AlGaN using grooved underlying layer Reviewed

    Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al

    Journal of Crystal Growth   Vol. 311 ( 0 ) page: 2860-2863   2009

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  467. One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy Reviewed

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   Vol. 311 ( 0 ) page: 2887-2890   2009

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  468. Optimization of electrode configuration in large GaInN light-emitting diodes Reviewed

    Ochiai, Wataru, Kawai, Ryosuke, Suzuki, Atsushi, Iwaya, Motoaki, Amano, Hiroshi, Kamiyama, Satoshi, Akasaki, Isamu

    Physica Status Solidic   Vol. 6 ( 0 ) page: 1416-1419   2009

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  469. Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer Reviewed

    Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   Vol. 311 ( 0 ) page: 2850-2852   2009

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  470. Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN Reviewed

    Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Applied Physics Express   Vol. 2 ( 0 ) page: 061004/1-061004/3   2009

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  471. Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters Reviewed

    Mori, T., Nagamatsu, K., Nonaka, K., Takeda, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.

    Physica Status Solidi C   Vol. 6 ( 0 ) page: 2621-2625   2009

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  472. Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17) Reviewed

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Physica Status Solidi B:   Vol. 246 ( 0 ) page: 1188-1190   2009

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  473. Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates Reviewed

    Imura Masataka, Sugimura Hiroki, Okada Narihito, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira

    J. Crystal Growth   Vol. 310 ( 0 ) page: 2308-2313   2008

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  474. High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN Reviewed

    Nagamatsu Kentaro, Okada Narihito, Sugimura Hiroki, Tsuzuki Hirotoshi, Mori Fumiaki, Iida Kazuyoshi, Bando Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 310 ( 0 ) page: 2326-2329   2008

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  475. AlN and AlGaN by MOVPE for UV light emitting devices Reviewed

    Amano, Hiroshi, Imura, Masataka, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu

    Materials Science Forum   Vol. 590 ( 0 ) page: 175-210   2008

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  476. Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode Reviewed

    Akasaki, Isamu, Amano, Hiroshi

    Japanese Journal of Applied Physics   Vol. 47 ( 0 ) page: 3781   2008

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  477. Control of p-type conduction in a-plane Ga1-xInxN (0 < x < 0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy Reviewed

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   Vol. 310 ( 0 ) page: 4996-4998   2008

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  478. Control of stress and crystalline quality in GaInN films used for green emitters Reviewed

    Iwaya, Motoaki, Miura, Aya, Senda, Ryota, Nagai, Tetsuya, Kawashima, Takeshi, Iida, Daisuke, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Journal of Crystal Growth   Vol. 310 ( 0 ) page: 4920-4922   2008

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  479. Dynamical study of the radiative recombination processes in GaN/AlGaN QWs Reviewed

    Sabooni, Mahmood, Esmaeili, Morteza, Haratizadeh, Hamid, Monemar, Bo, Amano, Hiroshi

    Journal of Materials Science: Materials in Electronics   Vol. 19 ( 0 ) page: S316-S318   2008

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  480. Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates Reviewed

    Pozina, G., Hemmingsson, C., Paskov, P. P., Bergman, J. P., Monemar, B., Kawashima, T., Amano, H., Akasaki, I., Usui, A.

    Applied Physics Letters   Vol. 92 ( 0 ) page: 151904/1-151904/3   2008

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  481. High hole concentration in Mg-doped a-plane Ga1-xInxN (0<x<0.30) grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy Reviewed

    Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

    Applied Physics Letters   Vol. 93 ( 0 ) page: 182108/1-182108/3   2008

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  482. All MOVPE grown nitride-based LED having sub mm underlying GaN Reviewed

    Tanaka Y., Ando J., Iida D., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 3073-3075   2008

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  483. Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE Reviewed

    Nagamatsu Kentaro, Okada Narihito, Kato Naofumi, Sumii Takafumi, Bandoh Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 3048-3050   2008

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  484. Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth Reviewed

    Senda Ryota, Miura Aya, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 3045-3047   2008

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  485. InGaN growth on ZnO (0001) substrate by metalorganic vapor phase epitaxy Reviewed

    Kawai Y., Ohsuka S., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 3023-3025   2008

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  486. Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates Reviewed

    Miura Aya, Nagai Tetsuya, Senda Ryota, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    J. Crystal Growth   Vol. 310 ( 0 ) page: 3308-3312   2008

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  487. Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth Reviewed

    Kawashima T., Hayakawa T., Hayashi M., Nagai T., Iida D., Miura A., Kasamatsu Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 2145-2147   2008

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  488. Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire Reviewed

    Iida K., Watanabe H., Takeda K., Mori F., Tsuzuki H., Yamashita Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 2142-2144   2008

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  489. High drain current and low on resistance normally-off-mode AlGaN/GaN junction HFETs with a p-type GaN gate contact. Reviewed

    Fujii T., Nakamura S., Mizuno K., Nega R., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 1906-1909   2008

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  490. Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth. Optical evidences for a reduced stacking fault density Reviewed

    Paskov P. P., Monemar B., Iida D., Kawashima T., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 1768-1770   2008

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  491. Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates Reviewed

    Imura M., Sugimura H., Okada N., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bando A.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 1582-1584   2008

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  492. Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy Reviewed

    Iida Daisuke, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 1575-1578   2008

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  493. Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy Reviewed

    Kato Naofumi, Sato S., Sugimura H., Sumii T., Okada N., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Bandoh A.

    Physica Status Solidi C   Vol. 5 ( 0 ) page: 1559-1561   2008

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  494. Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates Reviewed

    Pozina G., Hemmingsson C., Paskov P. P., Bergman J. P., Monemar B., Kawashima T., Amano H., Akasaki I., Usui A.

    Appl. Phys. Lett.   Vol. 92 ( 0 ) page: 151904/1-151904/3   2008

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  495. Photoluminescence from highly excited AlN epitaxial layers. Reviewed

    Yamada Yoichi, Choi Kihyun, Shin Seungho, Murotani Hideaki, Taguchi Tsunemasa, Okada Narihito, Amano Hiroshi

    Appl. Phys. Lett.   Vol. 92 ( 0 ) page: 131912/1-131912/3   2008

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  496. Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen Reviewed

    Kamei K., Shirai Y., Tanaka T., Okada N., Yauchi A., Amano H..

    Physica Status Solidi C:   Vol. 4 ( 0 ) page: 2211-2214   2007

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  497. Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy Reviewed

    Balakrishnan Krishnan, Bandoh Akria, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   Vol. 46 ( 0 ) page: L307-L310   2007

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  498. Dislocations in AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy Reviewed

    Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    Jpn. J. Appl. Phys.   Vol. 46 ( 0 ) page: 1458-1462   2007

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  499. Control of threshold voltage of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate contact Reviewed

    Fujii Takahiro, Tsuyukuchi Norio, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   Vol. 46 ( 0 ) page: 115-118   2007

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  500. Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping. Reviewed

    Esmaeili M., Haratizadeh H., Monemar B., Paskov P. P., Holtz P. O., Bergman P., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Nanotechnology   Vol. 18 ( 0 ) page: 025401/1-025401/6   2007

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  501. Fabrication of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact Reviewed

    Fujii T., Tsuyukuchi N., Hirose Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 4 ( 0 ) page: 2708-2711   2007

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  502. Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy Reviewed

    Okada N., Imura M., Nagai T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi C   Vol. 4 ( 0 ) page: 2528-2531   2007

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  503. Mg-doped high-quality AlxGa1-xN (x = 0-1) grown by high-temperature metal-organic vapor phase epitaxy Reviewed

    Imura M., Kato N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi C   Vol. 4 ( 0 ) page: 2502-2505   2007

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  504. Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE Reviewed

    Balakrishnan K., Iida K., Bandoh A., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 4 ( 0 ) page: 2272-2276   2007

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  505. Entirely crack-free ultraviolet GaN/AlGaN laser diodes grown on 2-in. Sapphire substrate. Reviewed

    Yoshida Harumasa, Takagi Yasufumi, Kuwabara Masakazu, Amano Hiroshi, Kan Hirofumi.

    Jpn. J. Appl. Phys.   Vol. 46 ( 0 ) page: 5782-5784   2007

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  506. Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates Reviewed

    Pozina G., Paskov P. P., Bergman J. P., Hemmingsson C., Hultman L., Monemar B., Amano H., Akasaki I., Usui A.

    Appl. Phys. Lett.   Vol. 91 ( 0 ) page: 221901/1-221901/3   2007

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  507. Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates Reviewed

    Pozina G., Monemar B., Paskov P. P., Hemmingsson C., Hultman L., Amano H., Akasaki I., Paskova T., Figge S., Hommel D., Usui A.

    Physica B   Vol. 401-402 ( 0 ) page: 302-306   2007

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  508. Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth Reviewed

    Senda Ryota, Miura Aya, Hayakawa Takemasa, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   Vol. 46 ( 0 ) page: L948-L950   2007

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  509. Dependence of DAP emission properties on impurity concentrations in N-/B-co-doped 6H-SiC. Reviewed

    Murata Satoshi, Nakamura Yoshihiro, Maeda Tomohiko, Shibata Yoko, Ikuta Mina, Sugiura Masaaki, Nitta Shugo, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Yoshimoto Masahiro, Furusho Tomoaki, Kinoshita Hiroyuki.

    Materials Science Forum   Vol. 556-557 ( 0 ) page: 335-338   2007

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  510. Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification Reviewed

    Okada N., Kato N., Sato S., Sumii T., Nagai T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Noro T., Bandoh A.

    J. Crystal Growth   Vol. 298 ( 0 ) page: 349-353   2007

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  511. Microstructure in nonpolar m-plane GaN and AlGaN films Reviewed

    Nagai T., Kawashima T., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    J. Crystal Growth   Vol. 298 ( 0 ) page: 288-292   2007

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  512. Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE Reviewed

    Okada N., Kato N., Sato S., Sumii T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Bandoh A.

    J. Crystal Growth   Vol. 300 ( 0 ) page: 141-144   2007

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  513. Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio Reviewed

    Imura Masataka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    J. Crystal Growth   Vol. 300 ( 0 ) page: 136-140   2007

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  514. Epitaxial lateral overgrowth of AlxGa1-xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices Reviewed

    Iida Kazuyoshi, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira.

    J. Crystal Growth   Vol. 298 ( 0 ) page: 265-267   2007

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  515. Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates Reviewed

    Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    J. Crystal Growth   Vol. 298 ( 0 ) page: 261-264   2007

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  516. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers Reviewed

    Imura Masataka, Nakano Kiyotaka, Narita Gou, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    J. Crystal Growth   Vol. 298 ( 0 ) page: 257-260   2007

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  517. High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE Reviewed

    Kato N., Sato S., Sumii T., Fujimoto N., Okada N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.

    J. Crystal Growth   Vol. 298 ( 0 ) page: 215-218   2007

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  518. Reduction in defect density over whole area of (1-100) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth. Reviewed

    Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi B   Vol. 244 ( 0 ) page: 1848-1852   2007

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  519. Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X-ray diffraction analyses. Reviewed

    Inaba Katsuhiko, Amano Hiroshi.

    Physica Status Solidi B   Vol. 244 ( 0 ) page: 1775-1779   2007

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  520. Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum well Reviewed

    Haratizadeh H., Monemar B., Paskov Plamen P., Holtz Per Olof, Valcheva E., Persson P., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi B   Vol. 244 ( 0 ) page: 1727-1734   2007

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  521. One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters Reviewed

    Iida D., Miura A., Okadome Y., Tsuchiya Y., Kawashima T., Nagai T., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi A   Vol. 204 ( 0 ) page: 2005-2009   2007

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  522. High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate Reviewed

    Iida K., Watanabe H., Takeda K., Nagai T., Sumii T., Nagamatsu K., Kawashima T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Bandoh A.

    Physica Status Solidi A   Vol. 204 ( 0 ) page: 2000-2004   2007

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  523. Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces. Reviewed

    Valcheva E., Dimitrov S., Monemar B., Haratizadeh H., Persson P. O. A., Amano H., Akasaki I.

    Acta Physica Polonica, A   Vol. 112 ( 0 ) page: 395-400   2007

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  524. Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques Reviewed

    Chichibu S. F., Uedono A., Onuma T., Haskell B. A., Chakraborty A., Koyama T., Fini P. T., Keller S., Denbaars S. P., Speck J. S., Mishra U. K., Nakamura S., Yamaguchi S., Kamiyama S., Amano H., Akasaki I., Han J., Sota T.

    Philosophical Magazine   Vol. 87 ( 0 ) page: 2019-2039   2007

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  525. Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates Reviewed

    Balakrishnan K., Fujimoto N., Kitano T., Bandoh A., Imura M., Nakano K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Shimono K., Riemann T., Christen J.

    Physica Status Solidi C   Vol. 3 ( 0 ) page: 1392-1395   2006

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  526. A hydrogen-related shallow donor in GaN? Reviewed

    Monemar B., Paskov P. P., Bergman J. P., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica B   Vol. 376-377 ( 0 ) page: 460-463   2006

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  527. Dominant shallow acceptor enhanced by oxygen doping in GaN Reviewed

    Monemar B., Paskov P. P., Tuomisto F., Saarinen K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kimura S.

    Physica B   Vol. 376-377 ( 0 ) page: 440-443   2006

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  528. Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate Reviewed

    Imura M., Honshio A., Miyake Y., Nakano K., Tsuchiya N., Tsuda M., Okadome Y., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica B   Vol. 376-377 ( 0 ) page: 491-495   2006

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  529. Dominant shallow acceptor enhanced by oxygen doping in GaN Reviewed

    Monemar B, Paskov P P, Tuomisto F, Saarinen K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Kimura S

    Physica B   Vol. 376-377 ( 0 ) page: 440-443   2006

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  530. 6H-SiC homoepitaxial growth and optical property of boron- and nitrogen-doped donor-acceptor pair (DAP) emission on 1° -off substrate by closed-space sublimation method Reviewed

    Kawai Y., Maeda T., Nakamura Y., Sakurai Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Yoshimoto M., Furusho T., Kinoshita H., Shiomi H.

    Materials Science Forum   Vol. 527 ( 0 ) page: 263-266   2006

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  531. Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure Reviewed

    Iwaya M., Kasugai H., Kawashima T., Iida K., Honshio A., Miyake Y., Kamiyama S., Amano H., Akasaki I.

    Thin Solid Films   Vol. 515 ( 0 ) page: 768-770   2006

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  532. X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN Reviewed

    Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Physica Status Solidi B   Vol. 243 ( 0 ) page: 1524-1528   2006

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  533. Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates Reviewed

    Nakano K., Imura M., Narita G., Kitano T., Hirose Y., Fujimoto N., Okada N., Kawashima T., Iida K., Balakrishnan K., Tsuda M., Iwaya M., Kamiyama S., Amano H., Akasaki I.

    Physica Status Solidi A   Vol. 203 ( 0 ) page: 1632-1635   2006

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  534. Microstructure of thick AlN grown on sapphire by high-temperature MOVPE Reviewed

    Imura M., Nakano K., Kitano T., Fujimoto N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi A   Vol. 203 ( 0 ) page: 1626-1631   2006

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  535. Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells Reviewed

    Haratizadeh Hamid, Monemar Bo, Amano Hiroshi

    Physica Status Solidi A   Vol. 203 ( 0 ) page: 149-153   2006

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  536. Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC Reviewed

    Kamiyama S., Maeda T., Nakamura Y., Iwaya M., Amano H., Akasaki I., Kinoshita H., Furusho T., Yoshimoto M., Kimoto T., Suda J., Henry A., Ivanov I. G., Bergman J. P., Monemar B., Onuma T., Chichibu S. F.

    J. Apl. Phys.   Vol. 99 ( 0 ) page: 093108/1-093108/4   2006

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  537. Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy Reviewed

    Imura M., Nakano K., Kitano T., Fujimoto N., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.

    Appl. Phys. Lett.   Vol. 89 ( 0 ) page: 221901/1-221901/2   2006

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  538. Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact Reviewed

    Tsuyukuchi Norio, Nagamatsu Kentaro, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   Vol. 45 ( 0 ) page: L319-L321   2006

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  539. High on/off ratio in enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with P-type GaN gate contact Reviewed

    Fujii Takahiro, Tsuyukuchi Norio, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   Vol. 45 ( 0 ) page: L1048-L1050   2006

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  540. Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode Reviewed

    Akasaki Isamu, Amano Hiroshi.

    Jpn. J. Appl. Phys.   Vol. 45 ( 0 ) page: 9001-9010   2006

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  541. High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio Reviewed

    Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    Jpn. J. Appl. Phys.   Vol. 45 ( 0 ) page: 8639-8643   2006

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  542. Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire Reviewed

    Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.

    Jpn. J. Appl. Phys.   Vol. 45 ( 0 ) page: 2509-2513   2006

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  543. Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy Reviewed

    Okada Narihito, Fujimoto Naoki, Kitano Tsukasa, Narita Gou, Imura Masataka, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Shimono Kenji, Noro Tadashi, Takagi Takashi, Bandoh Akira.

    Jpn. J. Appl. Phys.   Vol. 45 ( 0 ) page: 2502-2504   2006

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  544. Effect of UV irradiation by UV LED on the apoptosis and necrosis of Jurkat cells Reviewed

    Inada Shunko Albano, Amano Hiroshi, Akasaki Isamu, Morita Akinori, Kobayashi Keiko.

    Meijo Daigaku Sogo Kenkyusho Sogo Gakujutsu Kenkyu Ronbunshu   Vol. 5 ( 0 ) page: 73-77   2006

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  545. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors Reviewed

    Chichibu Shigefusa F., Uedono Akira, Onuma Takeyoshi, Haskell Benjamin A., Chakraborty Arpan, Koyama Takahiro, Fini Paul T., Keller Stacia, DenBaars Steven P., Speck James S., Mishra Umesh K., Nakamura Shuji, Yamaguchi Shigeo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Han Jung, Sota Takayuki. O

    Nature Materials   Vol. 5 ( 0 ) page: 810-816   2006

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  546. Growth of high-quality AlN at high growth rate by high-temperature MOVPE Reviewed

    Fujimoto N., Kitano T., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.

    Physica Status Solidi C   Vol. 3 ( 0 ) page: 1617-1619   2006

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  547. Light extraction process in moth-eye structure Reviewed

    Kasugai H., Nagamatsu K., Miyake Y., Honshio A., Kawashima T., Iida K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kinoshita H., Shiomi H.

    Physica Status Solidi C   Vol. 3 ( 0 ) page: 2165-2168   2006

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  548. Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells Reviewed

    Arnaudov B., Paskov P. P., Haratizadeh H., Holtz P. O., Monemar B., Kamiyama S., Iwaya M., Amano H., Akasaki I.

    Physica Status Solidi C   Vol. 3 ( 0 ) page: 1888-1891   2006

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  549. Polarity and microstructure in InN thin layers grown by MOVPE Reviewed

    Kuwano N., Nakahara Y., Amano H..

    Physica Status Solidi C   Vol. 3 ( 0 ) page: 1523-1526   2006

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  550. Photoluminescence of GaN/AlN superlattices grown by MOCVD Reviewed

    PP Paskov JP Bergman V Darakchieva T Paskova B Monemar M IwayaS Kamiyama H Amano and I Akasaki

    Physica Status Solidi C: Current Topics in Solid State Physics   Vol. 2 ( 0 ) page: pp2345-2348   2005

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  551. Optical properties of InN related to surface plasmons Reviewed

    Shubina T V, Leymarie J, Jmerik V N, Toropov A A, Vasson A, Amano H, Schaff W J, Monemar B, Ivanov S V

    Physica Status Solidi A   Vol. 202 ( 0 ) page: 2633-2641   2005

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  552. CBED study of grain misorientations in AlGaN epilayers Reviewed

    Sahonta S-L, Cherns D, Liu R, Ponce F A, Amano H, Akasaki I

    Ultramicroscopy   Vol. 103 ( 0 ) page: 23-32   2005

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  553. Phonon mode behavior in strained wurtzite AlN/GaN superlattices Reviewed

    Darakchieva V, Valcheva E, Paskov P P, Schubert M, Paskova T, Monemar B, Amano H, Akasaki I

    Physical Review B   Vol. 71 ( 0 ) page: 115329/1-115329/9   2005

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  554. High-rate growth of films of dense, aligned double-walled carbon nanotubes using microwave plasma-enhanced chemical vapor deposition Reviewed

    Hiramatsu Mineo, Nagao Hidetoshi, Taniguchi Masaki, Amano Hiroshi, Ando Yoshinori, Hori Masaru

    Jpn. J. Appl. Phys.   Vol. 44 ( 0 ) page: L693-L695   2005

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  555. Control of p-type conduction in a-plane GaN grown on sapphire r-plane substrate Reviewed

    Tsuchiya Yosuke, Okadome Yoshizane, Honshio Akira, Miyake Yasuto, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   Vol. 44 ( 0 ) page: L1516-L1518   2005

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  556. Flat (11-20) GaN thin film on precisely offset-controlled (11-02) sapphire substrate Reviewed

    Imura Masataka, Hoshino Akira, Nakano Kiyotaka, Tsuda Michinobu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   Vol. 44 ( 0 ) page: 7418-7420   2005

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  557. High-efficiency nitride-based light-emitting diodes with moth-eye structure Reviewed

    Kasugai Hideki, Miyake Yasuto, Honshio Akira, Mishima Shunsuke, Kawashima Takeshi, Iida Kazuyoshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Kinoshita Hiroyuki, Shiomi Hiromu

    Jpn. J. Appl. Phys.   Vol. 44 ( 0 ) page: 7414-7417   2005

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  558. Impact of H2-preannealing of the sapphire substrate on the crystallinity of low-temperature-deposited AlN buffer layer Reviewed

    Tsuda Michinobu, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   Vol. 44 ( 0 ) page: 3913-3917   2005

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  559. Vertical growth of carbon nanowalls using rf plasma-enhanced chemical vapor deposition Reviewed

    Shiji K, Hiramatsu M, Enomoto A, Nakamura M, Amano H, Hori M

    Diamond and Related Materials   Vol. 14 ( 0 ) page: 831-834   2005

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  560. UV laser diode with 3509-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology Reviewed

    Kamiyama Satoshi, Iida Kazuyoshi, Kawashima Takeshi, Kasugai Hideki, Mishima Shunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu

    IEEE Journal of Selected Topics in Quantum Electronics   Vol. 11 ( 0 ) page: 1069-1073   2005

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  561. Free-to-bound radiative recombination in highly conducting InN epitaxial layers Reviewed

    Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I

    Superlattices and Microstructures   Vol. 36 ( 0 ) page: 563-571   2004

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  562. High-quality Al012Ga088N film with low dislocation density grown on facet-controlled Al012Ga088N by MOVPE Reviewed

    Kawashima Takeshi, Iida Kazuyoshi, Miyake Yasuto, Honshio Akira, Kasugai Hideki, Imura Masataka, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 272 ( 0 ) page: 377-380   2004

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  563. Laser diode of 3509nm wavelength grown on sapphire substrate by MOVPE Reviewed

    Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 272 ( 0 ) page: 270-273   2004

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  564. Time resolved photoluminescence study of Si modulation doped GaN/Al093N multiple quantum wells Reviewed

    Haratizadeh H, Monemar B, Paskov P P, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 241 ( 0 ) page: 1124-1133   2004

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  565. Defect and stress control of AlGaN for fabrication of high performance UV light emitters Reviewed

    Amano H, Miyazaki A, Iida K, Kawashima T, Iwaya M, Kamiyama S, Akasaki I, Liu R, Bell A, Ponce F A, Sahonta S, Cherns D

    Physica Status Solidi A: Applied Research   Vol. 201 ( 0 ) page: 2679-2685   2004

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  566. Optical investigation of AlGaN/GaN quantum wells and superlattices Reviewed

    Monemar B, Paskov P P, Haradizadeh H, Bergman J P, Valcheva E, Darakchieva V, Arnaudov B, Paskova T, Holtz P O, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 201 ( 0 ) page: 2251-2258   2004

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  567. Mie Resonances, Infrared Emission, and the Band Gap of InN Reviewed

    Shubina T V, Ivanov S V, Jmerik V N, Solnyshkov D D, Vekshin V A, Kop'ev P S, Vasson A, Leymarie J, Kavokin A, Amano H, Shimono K, Kasic A, Monemar B

    Physical Review Letters   Vol. 92 ( 0 ) page: 117407/1-117407/4   2004

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  568. The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films Reviewed

    Cherns D, Sahonta S-L, Liu R, Ponce F A, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 85 ( 0 ) page: 4923-4925   2004

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  569. Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth Reviewed

    Bell A, Liu R, Parasuraman U K, Ponce F A, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 85 ( 0 ) page: 3417-3419   2004

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  570. Photoluminescence study of Si-doped GaN/Al007Ga093N multiple quantum wells with different dopant position Reviewed

    Haratizadeh H, Monemar B, Paskov P P, Bergman J P, Sernelius B E, Holtz P O, Iwaya M, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 84 ( 0 ) page: 5071-5073   2004

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  571. Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection Reviewed

    Hiramatsu M, Shiji K, Amano H, Hori M

    Appl. Phys. Lett.   Vol. 84 ( 0 ) page: 4708-4710   2004

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  572. Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels Reviewed

    Arnaudov B, Paskova T, Paskov P P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W J, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 69 ( 0 ) page: 115216/1-115216/5   2004

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  573. 3509 nm UV laser diode grown on low-dislocation-density AlGaN Reviewed

    Iida Kazuyoshi, Kawashima Takeshi, Miyazaki Atsushi, Kasugai Hideki, Mishima Syunsuke, Honshio Akira, Miyake Yasuto, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters & Express Letters   Vol. 43 ( 0 ) page: L499-L500   2004

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  574. Study on the seeded growth of AlN bulk crystals by sublimation Reviewed

    Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Takagi Takashi, Noro Tadashi

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   Vol. 43 ( 0 ) page: 7448-7453   2004

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  575. Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements Reviewed

    Takeda Y, Tabuchi M, Amano H, Akasaki I

    Surface Review and Letters   Vol. 10 ( 0 ) page: 537-541   2003

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  576. Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures Reviewed

    Monemar B, Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 237 ( 0 ) page: 353-364   2003

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  577. Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE Reviewed

    Tsuda Michinobu, Watanabe Kenichi, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Liu Rong, Bell Abigail, Ponce Fernando A

    Applied Surface Science   Vol. 216 ( 0 ) page: 585-589   2003

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  578. Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy Reviewed

    Tomida Yoshihito, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Otani Shigeki, Kinoshita Hiroyuki, Liu Rong, Bell Abigail, Ponce Fernando A

    Applied Surface Science   Vol. 216 ( 0 ) page: 502-507   2003

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  579. Violet and UV light-emitting diodes grown on ZrB2 substrate Reviewed

    Kamiyama S, Takanami S, Tomida Y, Iida K, Kawashima T, Fukui S, Iwaya M, Kinoshita H, Matsuda T, Yasuda T, Otani S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 200 ( 0 ) page: 67-70   2003

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  580. Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN Reviewed

    Iwaya M, Takanami S, Miyazaki A, Kawashima T, Iida K, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 200 ( 0 ) page: 110-113   2003

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  581. Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields Reviewed

    Monemar B, Paskov P P, Haratizadeh H, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 195 ( 0 ) page: 523-527   2003

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  582. Group III nitride-based UV light emitting devices Reviewed

    Amano H, Takanami S, Iwaya M, Kamiyama S, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 195 ( 0 ) page: 491-495   2003

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  583. Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy Reviewed

    Onuma T, Chichibu S F, Uchinuma Y, Sota T, Yamaguchi S, Kamiyama S, Amano H, Akasaki I

    J. Apl. Phys.   Vol. 94 ( 0 ) page: 2449-2453   2003

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  584. Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates Reviewed

    Sumiya M, Ogusu N, Yotsuda Y, Itoh M, Fuke S, Nakamura T, Mochizuki S, Sano T, Kamiyama S, Amano H, Akasaki I

    J. Apl. Phys.   Vol. 93 ( 0 ) page: 1311-1319   2003

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  585. Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire Reviewed

    Bell A, Liu R, Ponce F A, Amano H, Akasaki I, Cherns D

    Appl. Phys. Lett.   Vol. 82 ( 0 ) page: 349-351   2003

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  586. High-power UV-light-emitting diode on sapphire Reviewed

    Iwaya Motoaki, Takanami Shun, Miyazaki Atsushi, Watanabe Yasuhiro, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   Vol. 42 ( 0 ) page: 400-403   2003

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  587. ZrB2 substrate for nitride semiconductors Reviewed

    Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Hiroyuki

    Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers   Vol. 42 ( 0 ) page: 2260-2264   2003

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  588. Piezoelectric effect in group-III nitride-based heterostructures and quantum wells Reviewed

    Takeuchi T, Wetzel C, Amano H, Akasaki I

    Optoelectronic Properties of Semiconductors and Superlattices   Vol. 16 ( 0 ) page: 399-438   2003

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  589. Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN Reviewed

    Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Itoh T, McCreery R L, Murakami Masanori, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 240 ( 0 ) page: 356-359   2003

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  590. Growth-induced defects in AlN/GaN superlattices with different periods Reviewed

    Valcheva E, Paskova T, Radnoczi G Z, Hultman L, Monemar B, Amano H, Akasaki I

    Physica B: Condensed Matter AmsterdamNetherlands   Vol. 340-342 ( 0 ) page: 1129-1132   2003

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  591. Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I

    J. Crystal Growth   Vol. 248 ( 0 ) page: 503-506   2003

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  592. Structural analysis of Si-doped AlGaN/GaN multi-quantum wells Reviewed

    Nakamura Tetsuya, Mochizuki Shingo, Terao Shinji, Sano Tomoaki, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 1129-1132   2002

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  593. Photoluminescence and electroluminescence characterization of InxGa1-xN/InyGa1-yN multiple quantum well light emitting diodes Reviewed

    Bergman J P, Pozina G, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Materials Science Forum   Vol. 389-393 ( 0 ) page: 1493-1496   2002

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  594. MOVPE growth and characterization of Al1-xInxN/GaN multiple layers Reviewed

    Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Watanabe Yasuhiro, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 968-971   2002

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  595. Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN Reviewed

    Iwaya Motoaki, Terao Shinji, Sano Tomoaki, Ukai Tsutomu, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 951-955   2002

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  596. Relaxation of misfit-induced stress in nitride-based heterostructures Reviewed

    Terao Shinji, Iwaya Motoaki, Sano Tomoaki, Nakamura Tetsuya, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 947-950   2002

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  597. Characterization of local structures around In atoms in Ga1-xInxN layers by fluorescence EXAFS measurements Reviewed

    Tabuchi M, Katou D, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 1139-1142   2002

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  598. Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers Reviewed

    Tabuchi M, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 1133-1138   2002

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  599. Electric fields in polarized GaInN/GaN heterostructures Reviewed

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    Optoelectronic Properties of Semiconductors and Superlattices   Vol. 14 ( 0 ) page: 219-258   2002

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  600. Critical issues in AlxGa1-xN growth Reviewed

    Amano Hiroshi, Akasaki Isamu

    Optical Materials Amsterdam Netherlands   Vol. 19 ( 0 ) page: 219-222   2002

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  601. Reduction of threading dislocation density in AlxGa1-xN grown on periodically grooved substrates Reviewed

    Mochizuki Shingo, Detchprohm Theeradetch, Sano Shigekazu, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 237-239 ( 0 ) page: 1065-1069   2002

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  602. Low-dislocation-density GaN and AlxGa1-xN (x? 013) grown on grooved substrates Reviewed

    Sano Shigekazu, Detchprohm Theeradetch, Mochizuki Shingo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 235 ( 0 ) page: 129-134   2002

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  603. Migration of dislocations in strained GaN heteroepitaxial layers Reviewed

    Sahonta S-L, Baines M Q, Cherns D, Amano H, Ponce F A

    Physica Status Solidi B: Basic Research   Vol. 234 ( 0 ) page: 952-955   2002

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  604. Mg incorporation in AlGaN layers grown on grooved sapphire substrates Reviewed

    Cherns D, Baines M Q, Wang Y Q, Liu R, Ponce F A, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 234 ( 0 ) page: 850-854   2002

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  605. Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells Reviewed

    Paskov P P, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 234 ( 0 ) page: 755-758   2002

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  606. Mass transport of AlxGa1-xN Reviewed

    Nitta S, Yukawa Y, Watanabe Y, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 194 ( 0 ) page: 485-488   2002

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  607. High-efficiency UV light-emitting diode Reviewed

    Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 194 ( 0 ) page: 393-398   2002

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  608. Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 192 ( 0 ) page: 453-455   2002

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  609. Annihilation of threading dislocations in GaN/AlGaN Reviewed

    Kuwano N, Tsuruda T, Adachi Y, Terao S, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 192 ( 0 ) page: 366-370   2002

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  610. UV light-emitting diode fabricated on hetero-ELO-grown Al022Ga078N with low dislocation density Reviewed

    Kamiyama S, Iwaya M, Takanami S, Terao S, Miyazaki A, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 192 ( 0 ) page: 296-300   2002

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  611. Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures Reviewed

    Monemar B, Paskov P P, Pozina G, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 192 ( 0 ) page: 21-26   2002

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  612. Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells Reviewed

    Monemar B, Paskov P P, Bergman J P, Pozina G, Paskova T, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 190 ( 0 ) page: 161-166   2002

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  613. Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templates Reviewed

    Pozina G, Bergman J P, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 190 ( 0 ) page: 107-111   2002

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  614. High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi S, Iwamura Y, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I

    Institute of Physics Conference Series   Vol. 170 ( 0 ) page: 813-817   2002

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  615. Growth of high-quality GaN on metallic-ZrB2 by metalorganic vapor phase epitaxy Reviewed

    Yukawa Y, Nakamura T, Kosaki M, Watanabe Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H

    Institute of Physics Conference Series   Vol. 170 ( 0 ) page: 713-718   2002

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  616. Low-dislocation-density AlxGa1-xN single crystals grown on grooved substrates Reviewed

    Sano Shigekazu, Detchprohm Theeradetch, Yano Masahiro, Nakamura Ryo, Mochizuki Shingo, Amano Hiroshi, Akasaki Isamu

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   Vol. 93 ( 0 ) page: 197-201   2002

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  617. In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology Reviewed

    Nitta Shugo, Yukawa Yohei, Watanabe Yasuhiro, Kosaki Masayoshi, Iwaya Motoaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   Vol. 93 ( 0 ) page: 139-142   2002

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  618. Optical characterization of III-nitrides Reviewed

    Monemar B, Paskov P P, Paskova T, Bergman J P, Pozina G, Chen W M, Hai P N, Buyanova I A, Amano H, Akasaki I

    Materials Science & Engineering B: Solid-State Materials for Advanced Technology   Vol. 93 ( 0 ) page: 112-122   2002

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  619. Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN Reviewed

    Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Murakami Masanori, Kamiyama S, Amano H, Akasaki I

    J. Apl. Phys.   Vol. 92 ( 0 ) page: 3657-3661   2002

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  620. Atomic arrangement at the AlN/ZrB2 interface Reviewed

    Liu R, Bell A, Ponce F A, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 81 ( 0 ) page: 3182-3184   2002

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  621. Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi Shigeo, Iwamura Yasuo, Watanabe Yasuhiro, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   Vol. 80 ( 0 ) page: 802-804   2002

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  622. Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates Reviewed

    Riemann T, Christen J, Kaschner A, Laades A, Hoffmann A, Thomsen C, Iwaya M, Kamiyama S, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 80 ( 0 ) page: 3093-3095   2002

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  623. Effect of n-type modulation doping on the photoluminescence of GaN/Al0 Reviewed

    Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 80 ( 0 ) page: 1373-1375   2002

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  624. Optical absorption in polarized Ga1-xInxN/GaN quantum wells Reviewed

    Wetzel Christian, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   Vol. 41 ( 0 ) page: 11-14   2002

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  625. Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells Reviewed

    Wetzel C, Nelson J, Kamiyama S, Amano H, Akasaki I

    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures   Vol. 20 ( 0 ) page: 216-218   2002

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  626. Novel aspects of the growth of nitrides by MOVPE Reviewed

    Amano H, Akasaki I

    Journal of Physics: Condensed Matter   Vol. 13 ( 0 ) page: 6935-6944   2001

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  627. Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport Reviewed

    Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I

    Materials Science Forum   Vol. 353-356 ( 0 ) page: 791-794   2001

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  628. Compensation mechanism in MOCVD and MBE grown GaN:Mg Reviewed

    Alves H, Bohm M, Hofstaetter A, Amano H, Einfeldt S, Hommel D, Hofmann D M, Meyer B K

    Physica B: Condensed Matter AmsterdamNetherlands   Vol. 308-310 ( 0 ) page: 38-41   2001

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  629. DX-like behavior of oxygen in GaN Reviewed

    Wetzel C, Amano H, Akasaki I, Ager J W, Grzegory I, Meyer B K

    Physica B: Condensed Matter AmsterdamNetherlands   Vol. 302&303 ( 0 ) page: 23-38   2001

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  630. Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport Reviewed

    Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I

    J. Crystal Growth   Vol. 230 ( 0 ) page: 473-476   2001

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  631. Near K-edge absorption spectra of III-V nitrides Reviewed

    Fukui K, Hirai R, Yamamoto A, Hirayama H, Aoyagi Y, Yamaguchi S, Amano H, Akasaki I, Tanaka S

    Physica Status Solidi B: Basic Research   Vol. 228 ( 0 ) page: 461-465   2001

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  632. Optical characterization of InGaN/GaN MQW structures without in phase separation Reviewed

    Monemar B, Paskov P P, Pozina G, Paskova T, Bergman J P, Iwaya M, Nitta S, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 228 ( 0 ) page: 157-160   2001

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  633. Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure Reviewed

    Kamiyama S, Iwaya M, Hayashi N, Takeuchi T, Amano H, Akasaki I, Watanabe S, Kaneko Y, Yamada N

    J. Crystal Growth   Vol. 223 ( 0 ) page: 83-91   2001

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  634. Crystal growth of high-quality AlInN/GaN superlattices and of crack-free AlN on GaN: their possibility of high electron mobility transistor Reviewed

    Yamaguchi S, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 188 ( 0 ) page: 895-898   2001

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  635. Growth mechanism and characterization of low-dislocation-density AlGaN single crystals grown on periodically grooved substrates Reviewed

    Detchprohm T, Sano S, Mochizuki S, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 188 ( 0 ) page: 799-802   2001

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  636. Demonstration of flame detection in room light background by solar-blind AlGaN PIN photodiode Reviewed

    Hirano A, Pernot C, Iwaya M, Detchprohm T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 188 ( 0 ) page: 293-296   2001

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  637. High-efficiency GaN/AlxGa1-xN multi-quantum-well light emitter grown on low-dislocation density AlxGa1-xN Reviewed

    Iwaya M, Terao S, Sano T, Takanami S, Ukai T, Nakamura R, Kamiyama S, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 188 ( 0 ) page: 117-120   2001

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  638. Absorption spectroscopy and band structure in polarized GaN/AlxGa1-xN quantum wells Reviewed

    Wetzel C, Kasumi M, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 183 ( 0 ) page: 51-60   2001

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  639. Control of strain in GaN by a combination of H2 and N2 carrier gases Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    J. Apl. Phys.   Vol. 89 ( 0 ) page: 7820-7824   2001

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  640. Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant Reviewed

    Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   Vol. 82 ( 0 ) page: 137-139   2001

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  641. Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices Reviewed

    Yamaguchi Shigeo, Kosaki Masayoshi, Watanabe Yasuyukihiro, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   Vol. 79 ( 0 ) page: 3062-3064   2001

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  642. Control of strain in GaN using an In doping-induced hardening effect Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Kashima Takayuki, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Amano Hiroshi, Akasaki Isamu

    Physical Review B: Condensed Matter and Materials Physics   Vol. 64 ( 0 ) page: 035318/1-035318/5   2001

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  643. Photoresponse and defect levels of AlGaN/GaN heterobipolar phototransistor grown on low-temperature AlN interlayer Reviewed

    Mouillet Robert, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 40 ( 0 ) page: L498-L501   2001

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  644. Metalorganic vapor phase epitaxial growth of high-quality (Al,In)N/(Al,Ga)N multiple layers on GaN Reviewed

    Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 40 ( 0 ) page: L420-L422   2001

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  645. Fracture of AlxGa1-xN/GaN heterostructure Compositional and impurity dependence Reviewed

    Terao Shinji, Iwaya Motoaki, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 40 ( 0 ) page: L195-L197   2001

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  646. Heteroepitaxial lateral overgrowth of GaN on periodically grooved substrates: a new approach for growing low-dislocation-density GaN single crystals Reviewed

    Detchprohm Theeradetch, Yano Masahiro, Sano Shigekazu, Nakamura Ryo, Mochiduki Shingo, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 40 ( 0 ) page: L16-L19   2001

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  647. Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride Reviewed

    Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Kiroyuki

    Jpn. J. Appl. Phys. Part : Letters   Vol. 40 ( 0 ) page: L1280-L1282   2001

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  648. Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers Reviewed

    Chow W W, Amano H

    IEEE Journal of Quantum Electronics   Vol. 37 ( 0 ) page: 265-273   2001

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  649. Mass transport of GaN and reduction of threading dislocations Reviewed

    Nitta S, Kashima T, Nakamura R, Iwaya M, Amano H, Akasaki I

    Surface Review and Letters   Vol. 7 ( 0 ) page: 561-564   2000

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  650. Electrical conductivity of low-temperature-deposited Al01Ga09N interlayer Reviewed

    Hayashi Nobuaki, Kamiyama Satoshi, Takeuchi Tetsuya, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu, Watanabe Satoshi, Kaneko Yawara, Yamada Norihide

    Jpn. J. Appl. Phys.   Vol. 39 ( 0 ) page: 6493-6495   2000

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  651. Radiative recombination in (In,Ga)N/GaN multiple quantum wells Reviewed

    Bergman J P, Monemar B, Pozina G, Sernelius B E, Holtz P O, Amano H, Akasaki I

    Materials Science Forum   Vol. 338-342 ( 0 ) page: 1571-1574   2000

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  652. Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method Reviewed

    Tabuchi M, Hirayama K, Takeda Y, Takeuchi T, Amano H, Akasaki I

    Applied Surface Science   Vol. 159-160 ( 0 ) page: 432-440   2000

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  653. Mass transport and the reduction of threading dislocation in GaN Reviewed

    Nitta S, Kariya M, Kashima T, Yamaguchi S, Amano H, Akasaki I

    Applied Surface Science   Vol. 159-160 ( 0 ) page: 421-426   2000

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  654. Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy Reviewed

    Yamaguchi S, Kariya M, Nitta S, Amano H, Akasaki I

    Applied Surface Science   Vol. 159-160 ( 0 ) page: 414-420   2000

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  655. Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer Reviewed

    Iwaya M, Terao S, Hayashi N, Kashima T, Amano H, Akasaki I

    Applied Surface Science   Vol. 159-160 ( 0 ) page: 405-413   2000

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  656. Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas Reviewed

    Yamaguchi S, Kariya M, Nitta S, Kashima T, Kosaki M, Yukawa Y, Amano H, Akasaki I

    J. Crystal Growth   Vol. 221 ( 0 ) page: 327-333   2000

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  657. Structural characterization of Al1-xInxN lattice-matched to GaN Reviewed

    Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kashima Takayuki, Kato Hisaki, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 209 ( 0 ) page: 419-423   2000

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  658. Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells Reviewed

    Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers   Vol. 39 ( 0 ) page: 413-416   2000

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  659. Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GaInN active layer Reviewed

    Kamiyama Satoshi, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers   Vol. 39 ( 0 ) page: 390-392   2000

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  660. Piezoelectric polarization in GaInN/GaN heterostructures and some consequences for device design Reviewed

    Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   Vol. 39 ( 0 ) page: 2425-2427   2000

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  661. The effect of isoelectronic In-doping on the structural and optical properties of (Al)GaN grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   Vol. 39 ( 0 ) page: 2385-2388   2000

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  662. Gain-switching of GaInN multiquantum well laser diodes Reviewed

    Marinelli C, Khrushchev I Y, Rorison J M, Penty R V, White I H, Kaneko Y, Watanabe S, Yamada N, Takeuchi T, Amano H, Akasaki I, Hasnain G, Schneider R, Wang S-Y, Tan M R T

    Electronics Letters   Vol. 36 ( 0 ) page: 83-84   2000

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  663. Nitride-based laser diodes using thick n-AlGaN layers Reviewed

    Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y W, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Y S, Yamada N

    Journal of Electronic Materials   Vol. 29 ( 0 ) page: 302-305   2000

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  664. Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices Reviewed

    Wetzel C, Detchprohm T, Takeuchi T, Amano H, Akasaki I

    Journal of Electronic Materials   Vol. 29 ( 0 ) page: 252-255   2000

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  665. Characterization of initial growth stage of GaInN multilayered structure by X-ray CTR scattering and X-ray reflectivity method Reviewed

    Tabuchi Masao, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu

    Hyomen Kagaku   Vol. 21 ( 0 ) page: 162-168   2000

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  666. Effect of low-temperature deposited layer on the growth of Group III nitrides on sapphire Reviewed

    Amano Hiroshi, Akasaki Isamu

    Hyomen Kagaku   Vol. 21 ( 0 ) page: 126-133   2000

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  667. Effect on GaN/Al017Ga083N and Al005Ga095N/Al017Ga083N quantum wells by isoelectronic in-doping during metalorganic vapor phase epitaxy Reviewed

    Kariya Michihiko, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 39 ( 0 ) page: L143-L145   2000

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  668. Improvement of structural and optical properties of GaN and AlGaN using isoelectronic In doping Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Institute of Physics Conference Series   Vol. 166 ( 0 ) page: 471-474   2000

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  669. Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells Reviewed

    Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I

    J. Apl. Phys.   Vol. 88 ( 0 ) page: 2677-2681   2000

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  670. Multiple peak spectra from InGaN/GaN multiple quantum wells Reviewed

    Pozina G, Bergman J P, Monemar B, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 80 ( 0 ) page: 85-89   2000

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  671. InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport Reviewed

    Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 77 ( 0 ) page: 1638-1640   2000

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  672. Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   Vol. 76 ( 0 ) page: 876-878   2000

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  673. Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant Reviewed

    Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 76 ( 0 ) page: 3388-3390   2000

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  674. Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers Reviewed

    Chow W W, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 76 ( 0 ) page: 1647-1649   2000

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  675. Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain Reviewed

    Shapiro N A, Kim Y, Feick H, Weber E R, Perlin P, Yang J W, Akasaki I, Amano H

    Physical Review B: Condensed Matter and Materials Physics   Vol. 62 ( 0 ) page: R16318-R16321   2000

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  676. Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells Reviewed

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 62 ( 0 ) page: R13302-R13305   2000

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  677. Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study Reviewed

    Hai P N, Chen W M, Buyanova I A, Monemar B, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 62 ( 0 ) page: R10607-R10609   2000

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  678. Magneto-optical studies of the 088-eV photoluminescence emission in electron-irradiated GaN Reviewed

    Wagner Mt, Buyanova I A, Thinh N Q, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 62 ( 0 ) page: 16572-16577   2000

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  679. Localized vibrational modes in GaN:O tracing the formation of oxygen DX-like centers under hydrostatic pressure Reviewed

    Wetzel C, Amano H, Akasaki I, Ager J W III, Grzegory I, Topf M, Meyer B K

    Physical Review B: Condensed Matter and Materials Physics   Vol. 61 ( 0 ) page: 8202-8206   2000

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  680. Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga1-xInxN/GaN quantum-well structures Reviewed

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 61 ( 0 ) page: 2159-2163   2000

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  681. Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes Reviewed

    Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 39 ( 0 ) page: L387-L389   2000

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  682. Fabrication and characterization of GaN-based laser diode grown on thick n-AlGaN contact layer Reviewed

    Takeuchi T, Detchprohm T, Yano M, Yamaguchi M, Hayashi N, Iwaya M, Isomura K, Kimura K, Amano H, Akasaki I, Kaneko Y, Watanabe S, Yamaoka Y, Shioda R, Hidaka T, Kaneko Y, Yamada N

    Physica Status Solidi A: Applied Research   Vol. 176 ( 0 ) page: 31-34   1999

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  683. Photoluminescence investigations of AlGaN on GaN epitaxial films Reviewed

    Meyer Bruno K, Steude G, Goldner A, Hoffmann A, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 216 ( 0 ) page: 187-191   1999

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  684. Spectral study of photoluminescence from GaInN/GaN MQWs using CW and time-resolved measurements Reviewed

    Watanabe S, Yamada N, Yamada Y, Taguchi T, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 216 ( 0 ) page: 335-339   1999

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  685. X-ray interference and crystal truncation rod observation of GaN and GaInN layers grown on sapphire with AlN buffer layer Reviewed

    Tabuchi Masao, Takeda Yoshikazu, Matsumoto Nobuhiro, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers   Vol. 38 ( 0 ) page: 281-284   1999

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  686. Strain modification of GaN in AlGaN/GaN epitaxial films Reviewed

    Steude Guido, Meyer Bruno K, Goldner Axel, Hoffmann Axel, Kaschner Axel, Bechstedt Friedhelm, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 38 ( 0 ) page: L498-L500   1999

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  687. Low-intensity ultraviolet photodetectors based on AlGaN Reviewed

    Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 38 ( 0 ) page: L487-L489   1999

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  688. Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures Reviewed

    Wetzel Christian, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   Vol. 38 ( 0 ) page: L163-L165   1999

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  689. Microscopic investigation of Al043Ga057N on sapphire Reviewed

    Kashima Takayuki, Nakamura Ryo, Iwaya Motoaki, Katoh Hisaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Letters   Vol. 38 ( 0 ) page: L1515-L1518   1999

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  690. Optical transitions of the Mg acceptor in GaN Reviewed

    Hofmann Detlev M, Meyer Bruno K, Leiter Frank, von Forster Walter, Alves Helder, Romanov Nikolai, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers   Vol. 38 ( 0 ) page: L1422-L1424   1999

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  691. Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy Reviewed

    Watanabe Atsushi, Takahashi Hirokazu, Tanaka Toshiyuki, Ota Hiroyuki, Chikuma Kiyofumi, Amano Hiroshi, Kashima Takayuki, Nakamura Ryo, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 38 ( 0 ) page: L1159-L1162   1999

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  692. Mosaic structure of ternary Al1-xInxN films on GaN grown by metalorganic vapor phase epitaxy Reviewed

    Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 38 ( 0 ) page: L984-L986   1999

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  693. Correlation of vibrational modes and DX-like centers in GaN:O Reviewed

    Wetzel C, Ager J W III, Topf M, Meyer B K, Amano H, Akasaki I

    Physica B: Condensed Matter Amsterdam   Vol. 273-274 ( 0 ) page: 109-112   1999

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  694. Mg acceptors in GaN Dependence of the g-anisotropy on the doping concentration Reviewed

    Hofmann Detlev M, Burkhardt Wolfgang, Leiter Frank, Von Forster Walter, Alves Helder, Hofstaetter Albrecht, Meyer Bruno K, Romanov Nikolai G, Amano Hiroshi, Akasaki Isamu

    Physica B: Condensed Matter Amsterdam   Vol. 273-274 ( 0 ) page: 43-45   1999

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  695. Energy loss rate of excitons in GaN Reviewed

    Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I

    Physica B: Condensed Matter Amsterdam   Vol. 272 ( 0 ) page: 409-411   1999

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  696. Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer Reviewed

    Amano H, Iwaya M, Hayashi N, Kashima T, Nitta S, Wetzel C, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 216 ( 0 ) page: 683-689   1999

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  697. Discrete Stark-like ladder in piezoelectric GaInN/GaN quantum wells Reviewed

    Wetzel C, Kasumi M, Detchprohm T, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 216 ( 0 ) page: 399-403   1999

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  698. Improvement of low-intensity ultraviolet photodetectors based on AlGaN with low threading dislocation density Reviewed

    Pernot Cyril, Hirano A, Iwaya M, Detchprohm T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 176 ( 0 ) page: 147-151   1999

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  699. Study on electroluminescence spectrum and waveguide loss of GaInN multiple quantum well lasers Reviewed

    Kaneko Y, Shioda R, Yamada N, Takeuchi T, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 176 ( 0 ) page: 137-140   1999

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  700. GaN-based MQW light emitting diodes Reviewed

    Kato H, Koide N, Hirano A, Koike M, Amano H, Akasaki I

    Institute of Physics Conference Series   Vol. 162 ( 0 ) page: 31-35   1999

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  701. Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    J. Apl. Phys.   Vol. 85 ( 0 ) page: 7682-7688   1999

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  702. Piezoelectric Franz-Keldysh effect in strained (Ga,In)N/GaN heterostructures Reviewed

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    J. Apl. Phys.   Vol. 85 ( 0 ) page: 3786-3791   1999

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  703. Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   Vol. 75 ( 0 ) page: 4106-4108   1999

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  704. Improvement of far-field pattern in nitride laser diodes Reviewed

    Takeuchi T, Detchprohm T, Iwaya M, Hayashi N, Isomura K, Kimura K, Yamaguchi M, Amano H, Akasaki I, Kaneko Yw, Shioda R, Watanabe S, Hidaka T, Yamaoka Y, Kaneko Ys, Yamada N

    Appl. Phys. Lett.   Vol. 75 ( 0 ) page: 2960-2962   1999

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  705. Quantum-well width dependence of threshold current density in InGaN lasers Reviewed

    Chow W W, Amano H, Takeuchi T, Han J

    Appl. Phys. Lett.   Vol. 75 ( 0 ) page: 244-246   1999

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  706. Stress evolution during metalorganic chemical vapor deposition of GaN Reviewed

    Hearne S, Chason E, Han J, Floro J A, Figiel J, Hunter J, Amano H, Tsong I S T

    Appl. Phys. Lett.   Vol. 74 ( 0 ) page: 356-358   1999

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  707. Optical properties of doped InGaN/GaN multiquantum-well structures Reviewed

    Dalfors J, Bergman J P, Holtz P O, Sernelius B E, Monemar B, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 74 ( 0 ) page: 3299-3301   1999

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  708. Optical investigations of AlGaN on GaN epitaxial films Reviewed

    Steude G, Meyer B K, Goldner A, Hoffmann A, Bertram F, Christen J, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 74 ( 0 ) page: 2456-2458   1999

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  709. Electronic structure of the 088-eV luminescence center in electron-irradiated gallium nitride Reviewed

    Buyanova I A, Wagner Mt, Chen W M, Edwards N V, Monemar B, Lindstrom J L, Bremser M D, Davis R F, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 60 ( 0 ) page: 1746-1751   1999

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  710. Cooling dynamics of excitons in GaN Reviewed

    Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 59 ( 0 ) page: R7797-R7800   1999

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  711. GaN-based laser diode with focused ion beam-etched mirrors Reviewed

    Ambe C, Takeuchi T, Katoh H, Isomura K, Satoh T, Mizumoto R, Yamaguchi S, Wetzel C, Amano H, Akasaki I, Kaneko Y, Yamada N

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   Vol. 59 ( 0 ) page: 382-385   1999

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  712. TEM/HREM characterization of structural defects in GaN epitaxial layers grown on sapphire Reviewed

    Ruvimov S, Liliental-Weber Z, Washburn J, Amano H, Akasaki I

    Electron Microscopy   Vol. 2 ( 0 ) page: 693-694   1998

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  713. Weakly localized transport in modulation-doped GaN/AlGaN heterostructures Reviewed

    Buyanov A V, Sandberg J A, Sernelius B E, Holtz P O, Bergman J P, Monemar B, Amano H, Akasaki I

    J. Crystal Growth   Vol. 189/190 ( 0 ) page: 758-762   1998

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  714. Room-temperature photoluminescence linewidth versus material quality of GaN Reviewed

    Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I

    Materials Science Forum   Vol. 264-268 ( 0 ) page: 1319-1322   1998

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  715. Heteroepitaxy of group III nitrides for device applications Reviewed

    Amano H, Takeuchi T, Sakai H, Yamaguchi S, Wetzel C, Akasaki I

    Materials Science Forum   Vol. 264-268 ( 0 ) page: 1115-1120   1998

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  716. Valence band splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures Reviewed

    Wetzel C, Takeuchi T, Amano H, Akasaki I

    J. Crystal Growth   Vol. 189/190 ( 0 ) page: 621-624   1998

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  717. Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures Reviewed

    Sakai Hiromitsu, Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 189/190 ( 0 ) page: 831-836   1998

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  718. Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures Reviewed

    Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Dalfors J, Monemar B, Amano H, Akasaki I

    J. Crystal Growth   Vol. 189/190 ( 0 ) page: 753-757   1998

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  719. Thermal ionization energy of Si and Mg in (Al,Ga)N Reviewed

    Katsuragawa Maki, Sota Shigetoshi, Komori Miho, Anbe Chitoshi, Takeuchi Tetsuya, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 189/190 ( 0 ) page: 528-531   1998

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  720. Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering Reviewed

    Tabuchi Masao, Matsumoto Nobuhiro, Takeda Yoshikazu, Takeuchi Tetsuya, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 189/190 ( 0 ) page: 291-294   1998

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  721. The dependence of the band gap on alloy composition in strained AlGaN on GaN Reviewed

    Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I

    Physica Status Solidi B: Basic Research   Vol. 205 ( 0 ) page: R7-R8   1998

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  722. Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    J. Crystal Growth   Vol. 195 ( 0 ) page: 309-313   1998

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  723. The residual donor binding energy in AlGaN epitaxial layers Reviewed

    Steude G, Hofmann D M, Meyer B K, Amano H, Akasaki I

    Physica Status Solidi A: Applied Research   Vol. 165 ( 0 ) page: R3-R4   1998

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  724. On the nature of radiative recombination processes in GaN Reviewed

    Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Institute of Physics Conference Series   Vol. 156 ( 0 ) page: 239-244   1998

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  725. Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN Reviewed

    Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I, Wysmolek A, Lomiak P, Baranowski J M, Pakula K, Stepniewski R, Korona K P, Grzegory I, Bockowski M, Porowski S

    Solid State Communications   Vol. 105 ( 0 ) page: 497-501   1998

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  726. Optical band gap in Ga1-xInxN (0<x<02) on GaN by photoreflection spectroscopy Reviewed

    Wetzel C, Takeuchi T, Yamaguchi S, Katoh H, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 73 ( 0 ) page: 1994-1996   1998

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  727. Observation of photoluminescence from Al1-xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy Reviewed

    Yamaguchi Shigeo, Kariya Michihiko, Nitta Shugo, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   Vol. 73 ( 0 ) page: 830-831   1998

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  728. Photoluminescence of GaN: Effect of electron irradiation Reviewed

    Buyanova I A, Wagner Mt, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 73 ( 0 ) page: 2968-2970   1998

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  729. Determination of piezoelectric fields in strained (Ga,In)N quantum wells using the quantum-confined Stark effect Reviewed

    Takeuchi Tetsuya, Wetzel Christian, Yamaguchi Shigeo, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Nakagawa Shigeru, Yamaoka Yoshifumi, Yamada Norihide

    Appl. Phys. Lett.   Vol. 73 ( 0 ) page: 1691-1693   1998

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  730. Pit formation in GaInN quantum wells Reviewed

    Chen Y, Takeuchi T, Amano H, Akasaki I, Yamada N, Kaneko Y, Wang S Y

    Appl. Phys. Lett.   Vol. 72 ( 0 ) page: 710-712   1998

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  731. Similarity between the 088-eV photoluminescence in GaN and the electron-capture emission of the OP donor in GaP Reviewed

    Chen W M, Buyanova I A, Wagner Mt, Monemar B, Lindstrom J L, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 58 ( 0 ) page: R13351-R13354   1998

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  732. Influence of potential fluctuations on electrical transport and optical properties in modulation-doped GaN/Al028Ga072N heterostructures Reviewed

    Buyanov A V, Bergman J P, Sandberg J A, Sernelius B E, Holtz P O, Monemar B, Amano H, Akasaki I

    Physical Review B: Condensed Matter and Materials Physics   Vol. 58 ( 0 ) page: 1442-1450   1998

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  733. Structural properties of Al1-xInxN ternary alloys on GaN grown by metalorganic vapor phase epitaxy Reviewed

    Kariya Michihiko, Nitta Shugo, Yamaguchi Shigeo, Kato Hisaki, Takeuchi Tetsuya, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 37 ( 0 ) page: L697-L699   1998

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  734. GaN based laser diode with focused ion beam etched mirrors Reviewed

    Katoh Hisaki, Takeuchi Tetsuya, Anbe Chitoshi, Mizumoto Ryuichi, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu, Kaneko Yawara, Yamada Norihide

    Jpn. J. Appl. Phys. Part : Letters   Vol. 37 ( 0 ) page: L444-L446   1998

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  735. Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN Reviewed

    Iwaya Motoaki, Takeuchi Tetsuya, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 37 ( 0 ) page: L316-L318   1998

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  736. Investigation of the leakage current in GaN p-n junctions Reviewed

    Pernot Cyril, Hirano Akira, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys. Part : Letters   Vol. 37 ( 0 ) page: L1202-L1204   1998

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  737. Stress and defect control in GaN using low temperature interlayers Reviewed

    Amano Hiroshi, Iwaya Motoaki, Kashima Takayuki, Katsuragawa Maki, Akasaki Isamu, Han Jung, Hearne Sean, Floro Jerry A, Chason Eric, Figiel Jeffrey

    Jpn. J. Appl. Phys. Part : Letters   Vol. 37 ( 0 ) page: L1540-L1542   1998

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  738. Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters Reviewed

    Akasaki Isamu, Amano Hiroshi

    Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers   Vol. 36 ( 0 ) page: 5393-5408   1997

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  739. Photoluminescence of exciton-polaritons in GaN Reviewed

    Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   Vol. 50 ( 0 ) page: 130-133   1997

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  740. Electron gas in modulation doped GaN/AlGaN structures Reviewed

    Bergman J P, Buyanov A, Lundstrom T, Monemar B, Amano H, Akasaki I

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   Vol. 43 ( 0 ) page: 207-210   1997

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  741. Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3 Reviewed

    Merz C, Kunzer M, Santic B, Kaufmann U, Akasaki I, Amano H

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   Vol. 43 ( 0 ) page: 176-180   1997

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  742. Electronic structure and temperature dependence of excitons in GaN Reviewed

    Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology   Vol. 43 ( 0 ) page: 172-175   1997

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  743. Melt-back etching of GaN Reviewed

    Kaneko Yawara, Yamada Norihide, Takeuchi Tetsuya, Yamaoka Yoshifumi, Amano Hiroshi, Akasaki Isamu

    Solid-State Electronics   Vol. 41 ( 0 ) page: 295-298   1997

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  744. Recessed gate GaN MODFETs Reviewed

    Burm Jinwook, Schaff William J, Martin Glenn H, Eastman Lester F, Amano Hiroshi, Akasaki Isamu

    Solid-State Electronics   Vol. 41 ( 0 ) page: 247-250   1997

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  745. The excitonic bandgap of GaN: dependence on substrate Reviewed

    Monemar B, Bergman J P, Buyanova I A, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N T

    Solid-State Electronics   Vol. 41 ( 0 ) page: 239-241   1997

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  746. Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance Reviewed

    Kunzer M, Baur J, Kaufmann U, Schneider J, Amano H, Akasaki I

    Solid-State Electronics   Vol. 41 ( 0 ) page: 189-193   1997

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  747. Optical characterization of GaN and related materials Reviewed

    Monemar B, Bergman J P, Lundstroem T, Harris C I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N

    Solid-State Electronics   Vol. 41 ( 0 ) page: 181-184   1997

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  748. Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells Reviewed

    Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Takeuchi Hideo, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Letters   Vol. 36 ( 0 ) page: L382-L385   1997

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  749. Optical properties of strained AlGaN and GaInN on GaN Reviewed

    Takeuchi Tetsuya, Takeuchi Hideo, Sota Shigetoshi, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Letters   Vol. 36 ( 0 ) page: L177-L179   1997

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  750. Quantum beat spectroscopy on excitons in GaN Reviewed

    Zimmermann R, Hofmann M R, Euteneuer A, Mobius J, Weber D, Ruhle W W, Gobel E O, Meyer B K, Amano H, Akasaki I

    Materials Science & EngineeringB: Solid-State Materials for Advanced Technology-   Vol. 50 ( 0 ) page: 205-207   1997

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  751. Effects of buffer layers in heteroepitaxy of gallium nitride Reviewed

    Hiramatsu K, Detchprohm T, Amano H, Akasaki I

    Advances in the Understanding of Crystal Growth Mechanisms   ( 0 ) page: 399-413   1997

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  752. Progress and prospect of group-III nitride semiconductors Reviewed

    Akasaki Isamu, Amano Hiroshi

    J. Crystal Growth   Vol. 175/176 ( 0 ) page: 29-36   1997

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  753. Photoluminescence and optical gain in highly excited GaN Reviewed

    Eckey L, Holst J, Hoffmann A, Broser I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K

    Journal of Luminescence   Vol. 72-74 ( 0 ) page: 59-61   1997

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  754. Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well Reviewed

    Li Wei, Bergman Peder, Monemar Bo, Amano H, Akasaki I

    J. Apl. Phys.   Vol. 81 ( 0 ) page: 1005-1007   1997

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  755. Optical properties of tensile-strained wurtzite GaN epitaxial layers Reviewed

    Chichibu S, Azuhata T, Sota T, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 70 ( 0 ) page: 2085-2087   1997

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  756. Transient four-wave-mixing spectroscopy on gallium nitride: Energy splittings of intrinsic excitonic resonances Reviewed

    Zimmermann R, Euteneuer A, Mobius J, Weber D, Hofmann M R, Ruhle W W, Gobel E O, Meyer B K, Amano H, Akasaki I

    Physical Review B: Condensed Matter   Vol. 56 ( 0 ) page: R12722-R12724   1997

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  757. N K-edge x-ray-absorption study of heteroepitaxial GaN films Reviewed

    Katsikini M, Paloura E C, Fieber-Erdmann M, Kalomiros J, Moustakas T D, Amano H, Akasaki I

    Physical Review B: Condensed Matter   Vol. 56 ( 0 ) page: 13380-13386   1997

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  758. Shortest wavelength semiconductor laser diode Reviewed

    Akasaki I, Sota S, Sakai H, Tanaka T, Koike M, Amano H

    Electronics Letters   Vol. 32 ( 0 ) page: 1105-1106   1996

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  759. Crystal growth of column-III nitride semiconductors and their electrical and optical properties Reviewed

    Akasaki I, Amano H

    J. Crystal Growth   Vol. 163 ( 0 ) page: 86-92   1996

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  760. Raman and photoluminescence imaging of the GaN/substrate interface Reviewed

    Siegle H, Thurian P, Eckey L, Hoffmann A, Thomsen C, Meyer B K, Detchprohm T, Hiramatsu K, Amano H, Akasaki I

    Institute of Physics Conference Series   Vol. 149 ( 0 ) page: 97-102   1996

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  761. Present and future of group III nitride semiconductors Reviewed

    Akasaki Isamu, Amano Hiroshi

    Institute of Physics Conference Series   Vol. 145 ( 0 ) page: 19-22   1996

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  762. Relaxation and recombination dynamics in GaN/Al2O3 epilayers Reviewed

    Eckey L, Heitz R, Hoffmann A, Broser I, Meyer B K, Hiramatsu K, Detchprohm T, Amano H, Akasaki I

    Institute of Physics Conference Series   Vol. 142 ( 0 ) page: 927-930   1996

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  763. Remote plasma hydrogenation of Mg-doped GaN Reviewed

    Gotz W, Johnson N M, Walker J, Bour D P, Amano H, Akasaki I

    Institute of Physics Conference Series   Vol. 142 ( 0 ) page: 1031-1034   1996

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  764. Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface Reviewed

    Bergman JP, Lundstroem T, Monemar B, Amano H, Akasaki I

    Institute of Physics Conference Series   Vol. 142 ( 0 ) page: 935-938   1996

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  765. Exciton dynamics in GaN Reviewed

    Bergman J P, Monemar B, Amano H, Akasaki I, Hiramatsu K, Sawaki N, Detchprohm T

    Institute of Physics Conference Series   Vol. 142 ( 0 ) page: 931-934   1996

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  766. Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode Reviewed

    Akasaki Isamu, Amano Hiroshi, Suemune ikuo

    Institute of Physics Conference Series   Vol. 142 ( 0 ) page: 2010/07/10   1996

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  767. Magneto-optical studies of GaN and GaN/AlxGa1-xN: donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance Reviewed

    Wang Y J, Kaplan R, Ng H K, Doverspike K, Gaskill D K, Ikedo T, Akasaki I, Amono H

    J. Apl. Phys.   Vol. 79 ( 0 ) page: 8007-8010   1996

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  768. Effect of Si doping on the dislocation structure of GaN grown on a A-face of sapphire Reviewed

    Ruvimov Sergei, Liliental-Weber Zuzanna, Suski Tadesuz, Ager Joel W III, Washburn Jack, Krueger Joachim, Kisielowski Charistian, Weber Eicke R, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 69 ( 0 ) page: 990-992   1996

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  769. Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface Reviewed

    Bergman J P, Lundstroem t, Monemar B, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 69 ( 0 ) page: 3456-3458   1996

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  770. High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers Reviewed

    Li Wei, Bergman Peder, Ivanov Ivan, Ni Wei-Xin, Amano H, Akasa I

    Appl. Phys. Lett.   Vol. 69 ( 0 ) page: 3390-3392   1996

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  771. Intrinsic optical properties of GaN epilayers grown on SiC substrates: effect of the built-in strain Reviewed

    Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 69 ( 0 ) page: 1255-1257   1996

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  772. 75Å GaN channel modulation doped field effect transistors Reviewed

    Burm Jinwook, Schaff William J, Eastman Lester F, Amano Hiroshi, Akasaki Isamu

    Appl. Phys. Lett.   Vol. 68 ( 0 ) page: 2849-2851   1996

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  773. Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers Reviewed

    Wetzel C, Haller E E, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 68 ( 0 ) page: 2547/09/01   1996

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  774. Resonant Raman scattering in hexagonal GaN Reviewed

    Behr D, Wagner J, Schneider J, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 68 ( 0 ) page: 2404/06/01   1996

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  775. High-quality (Ga,In)N/GaN multiple quantum wells Reviewed

    Koike M, Yamasaki S, Nagai S, Koide N, Asami S, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 68 ( 0 ) page: 1403-5   1996

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  776. Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface Reviewed

    Siegle H, Thurian P, Eckey L, Hoffmann A, Thomsen C, Meyer B K, Amano H, Akasaki I, Detchprohm T, Hiramatsu K

    Appl. Phys. Lett.   Vol. 68 ( 0 ) page: 1265-6   1996

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  777. Free exciton emission in GaN Reviewed

    Kovalev D, Averboukh B, Volm D, Meyer B K, Amano H, Akaski I

    Physical Review B: Condensed Matter   Vol. 54 ( 0 ) page: 2518-2522   1996

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  778. Free and bound excitons in thin wurtzite GaN Reviewed

    Merz C, Kunzer M, Kaufmann U, Akasaki I, Amano H

    Materials Science & Engineering B: Solid-State Materials for Advanced Technology   Vol. 43 ( 0 ) page: 176-180   1996

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  779. Determination of the conduction band electron effective mass in hexagonal GaN Reviewed

    M. Drechsler D. M. Hofmann, B. K. Meyer, T. Detchprohm, H. Amano and I. Akasaki

    Jpn. J. Appl. Phys.Part : Letters   Vol. 34 ( 0 ) page: L1178-L1179   1995

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  780. Characterization of residual transition metal ions in GaN and AlN Reviewed

    Baur J., Kaufmann U., Kunzer M., Schneider J., Amano H., Akasaki I., Detchprohm T., Hiramatsu K.

    Materials Science Forum   Vol. 196-201 ( 0 ) page: 20333   1995

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  781. Crystal growth of column III nitrides and their applications to short wavelength light emitters Reviewed

    Akasaki I, Amano H

    J. Crystal Growth   Vol. 146 ( 0 ) page: 455-61   1995

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  782. Magneto-optical investigation of the neutral donor bound exciton in GaN Reviewed

    Volm D, Streibl T, Meyer B K, Detchprohm T, Amano H, Akasaki I

    Solid State Communications   Vol. 96 ( 0 ) page: 53-56   1995

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  783. Exciton lifetimes in GaN and GaInN Reviewed

    Harris C I, Monemar B, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 67 ( 0 ) page: 840-2   1995

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  784. Surface-mode stimulated emission from optically pumped GaInN at room temperature Reviewed

    Kim S T, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 67 ( 0 ) page: 267-9   1995

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  785. Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition Reviewed

    Gotz W, Johnson N M, Walker J, Bour D P, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 67 ( 0 ) page: 1966/08/01   1995

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  786. Photoluminescence of residual transition metal impurities in GaN Reviewed

    Baur J, Kaufmann U, Kunzer M, Schneider J, Amano H, Akasaki I, Detchprohm T, Hiramatsu K

    Appl. Phys. Lett.   Vol. 67 ( 0 ) page: 1140-2   1995

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  787. p-Type conduction in Mg-doped Ga091In009N grown by metalorganic vapor-phase epitaxy Reviewed

    Yamasaki S, Asami S, Shibata N, Koike M, Manabe K, Tanaka T, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 66 ( 0 ) page: 1112-13   1995

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  788. Photoemission capacitance transient spectroscopy of n-type GaN Reviewed

    Gotz W, Johnson N M, Street R A, Amano H, Akasaki I

    Appl. Phys. Lett.   Vol. 66 ( 0 ) page: 1340-2   1995

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  789. Properties of the yellow luminescence in undoped GaN epitaxial layers Reviewed

    . Hofmann D. M., Kovalev D., Steude G., Meyer B. K., Hoffmann A., Eckey L., Heitz R., Detchprom T., Amano H., Akasaki I.

    Physical Review B: Condensed Matter   Vol. 52 ( 0 ) page: 16702-6   1995

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  790. Exciton dynamics in GaN Reviewed

    . Bergman J.P., Monemar B., Amano H., Akasaki I.

    Lietuvos Fizikos Zurnalas   Vol. 35 ( 0 ) page: 569-574   1995

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  791. GaN/GaInN/GaN double heterostructure light emitting diode fabricated using plasma-assisted molecular beam epitaxy Reviewed

    Sakai Hiromitsu, Koide Takashi, Suzuki Hiroyuki, Yamaguchi Machiko, Yamasaki Shiro, Koike Masayoshi, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.Part : Letters   Vol. 34 ( 0 ) page: L1429-L1431   1995

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  792. Direct patterning of the current confinement structure for p-type Column-III nitrides by low-energy electron beam irradiation treatment Reviewed

    Inamori Masahiko, Sakai Hiromitsu, Tanaka Toshiyuki, Amano Hiroshi, Akasaki Isamu

    Jpn. J. Appl. Phys.   Vol. 34 ( 0 ) page: 1190-3   1995

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  793. Stimulated emission by current injection from an AlGaN/GaN/GaInN quantum well device Reviewed

    I. Akasaki, H. Amano, S. Sota, H. Sakai, T. Tanaka and M. Koike

    Jpn. J. Appl. Phys.   Vol. 34 ( 0 ) page: L1517-L1519   1995

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  794. Polarization of light from an optically pumped (Al-Ga-N)/(Ga-In-N) double heterostructure Reviewed

    S. T. Kim, T. Tanaka, H. Amano and I. Akasaki

    Mater. Sci. & Eng. B   Vol. 26 ( 0 ) page: L5-L7   1994

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  795. Iron acceptors in gallium nitride (GaN) Reviewed

    K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, B. Monemar, I. Akasaki and H. Amano.

    Materials Science Forum   Vol. 143-147 ( 0 ) page: 1993/08/01   1994

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  796. ODMR studies of MOVPE-grown GaN epitaxial layers Reviewed

    M. Kunzer, U. Kaufmann, K. Maier, J. Schneider, N. Herres, I. Akasaki and H. Amano.

    Materials Science Forum   Vol. 143-147 ( 0 ) page: 87-92   1994

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  797. Widegap column-III nitride semiconductors for UV/blue light emitting devices Reviewed

    I. Akasaki and H. Amano.

    Journal of the Electrochemical Society   Vol. 141 ( 0 ) page: 2266-71   1994

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  798. Perspective of UV/blue light emitting devices based on column-III nitrides Reviewed

    I. Akasaki and H. Amano.

    Institute of Physics Conference Series   Vol. 136 ( 0 ) page: 249-56   1994

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  799. p-Type conduction in Mg-doped GaN and Al008Ga092N grown by metalorganic vapor phase epitaxy Reviewed

    T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, and M. Koike

    Appl. Phys. Lett.   Vol. 65 ( 0 ) page: 593-4   1994

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  800. Deep level defects in n-type GaN Reviewed

    W. Goetz, N. M. Johnson, H. Amano and I. Akasaki

    Appl. Phys. Lett.   Vol. 65 ( 0 ) page: 463-5   1994

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  801. Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers Reviewed

    J. Baur, K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, H. Amano, I. Akasaki, T. Detchprohm and K. Hiramatsu

    Appl. Phys. Lett.   Vol. 64 ( 0 ) page: 857-9   1994

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  802. Optical gain of optically pumped Al01Ga09N/GaN double heterostructure at room temperature Reviewed

    S. T. Kim, H. Amano, I. Akasaki and N. Koide

    Appl. Phys. Lett.   Vol. 64 ( 0 ) page: 1535-6   1994

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  803. Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure Reviewed

    H. Amano, T. Tanaka Y. Kunii, K. Kato S. T. Kim and I. Akasaki

    Appl. Phys. Lett.   Vol. 64 ( 0 ) page: 1377-9   1994

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  804. Room-temperature low-threshold surface-stimulated emission by optical pumping from aluminum gallium nitride/gallium nitride (Al01Ga09N/GaN) double heterostructure Reviewed

    H. Amano, N. Watanabe, N. Koide and I. Akasaki.

    Jpn. J. Appl. Phys.   Vol. 32 ( 0 ) page: L1000-L1002   1993

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  805. The growth of single crystalline gallium nitride on a silicon substrate using aluminum nitride as an intermediate layer Reviewed

    A. Watanabe, T. Takeuchi K. Hirosawa, H. Amano, K. Hiramatsu and I. Akasaki

    J. Crystal Growth   Vol. 128 ( 0 ) page: 391-6   1993

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  806. The growth of thick gallium nitride film on sapphire substrate by using zinc oxide buffer layer Reviewed

    T. Detchprohm, H. Amano, K. Hiramatsu and I. Akasaki

    J. Crystal Growth   Vol. 128 ( 0 ) page: 384-390   1993

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  807. Growth of gallium nitride and aluminum gallium nitride for UV/blue p-n junction diodes Reviewed

    I. Akasaki, H. Amano, H. Murakami, M. Sassa H. Kato and K. Manabe

    J. Crystal Growth   Vol. 128 ( 0 ) page: 379-383   1993

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  808. Radiative energy transfer in magnesium-doped gallium nitride/chromium(3+)-doped alumina (GaN:Mg/Al2O3:Cr3+) epitaxial systems Reviewed

    K. Maier, J. Schneider, I. Akasaki and H. Amano.

    Jpn. J. Appl. Phys.   Vol. 32 ( 0 ) page: L846-L848   1993

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  809. GaN-based UV/blue light emitting devices Reviewed

    I. Akasaki, H. Amano, K. Itoh, N. Koide and K. Manabe

    Inst. Phys. Conf. Ser.   Vol. 129 ( 0 ) page: 851-6   1993

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  810. Conductivity control of gallium nitride and fabrication of UV/blue GaN light emitting devices Reviewed

    I. Akasaki, H. Amano, N. Koide M. Kotaki Mand K. Manabe

    Phys. B   Vol. 185 ( 0 ) page: 428-32   1993

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  811. Electric properties of zinc-doped gallium nitride-type light emitting diode Reviewed

    M. R. H. Khan, I. Akasaki, H. Amano, N. Okazaki and K. Manabe

    Phys. B   Vol. 185 ( 0 ) page: 480-4   1993

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  812. Perspective of the UV/blue light emitting devices based on gallium nitride and related compounds Reviewed

    Akasaki Isamu, Amano Hiroshi.

    Optoelec. -Devices and Technol.   Vol. 7 ( 0 ) page: 49-56   1992

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  813. Hydride vapor phase epitaxial growth of a high quality gallium nitride film using a zinc oxide buffer layer Reviewed

    Detchprohm T., Hiramatsu K., Amano H., Akasaki I.

    Appl. Phys. Lett.   Vol. 61 ( 0 ) page: 2688-2690   1992

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  814. Cathodoluminescence properties of undoped and zinc-doped aluminum gallium nitride grown by metalorganic vapor phase epitaxy Reviewed

    Itoh Kenji, Amano Hiroshi, Hiramatsu Kazumasa, Akasaki Isamu.

    Jpn. J. Appl. Phys.   Vol. 30 ( 0 ) page: 1604-1608   1991

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  815. Stimulated emission in MOVPE-grown gallium nitride (GaN) film Reviewed

    Amano Hiroshi, Asahi Tsunemori, Kito Masahiro, Akasaki Isamu.

    J. Lumin.   Vol. 48-49 ( 0 ) page: 889-892   1991

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  816. Photoluminescence of magnesium-doped p-type gallium nitride (GaN) and electroluminescence of gallium nitride (GaN) p-n junction LED Reviewed

    Akasaki Isamu, Amano Hiroshi, Kito Masahiro, Hiramatsu Kazumasa.

    J. Lumin.   Vol. 48-49 ( 0 ) page: 666-670   1991

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  817. Growth and properties of single crystalline gallium nitride films by hydride vapor phase epitaxy Reviewed

    Akasaki I., Naniwae K., Itoh K., Amano H., Hiramatsu K.

    Crystal Properties and Preparation   Vol. 32-34 ( 0 ) page: 154-157   1991

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  818. Growth of silicon-doped aluminum gallium nitride on (0001) sapphire substrate by metalorganic vapor phase epitaxy Reviewed

    Murakami Hiroshi, Asahi Tsunemori, Amano Hiroshi, Hiramatsu Kazumasa, Sawaki Nobuhiko, Akasaki Isamu.

    J. Crystal Growth   Vol. 115 ( 0 ) page: 648-651   1991

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  819. Doping of gallium nitride with silicon and properties of blue m/i/n/n+ gallium nitride LED with silicon-doped n+-layer by MOVPE Reviewed

    Koide N., Kato H., Sassa M., Yamasaki S., Manabe K., Hashimoto M., Amano H., Hiramatsu K., Akasaki I.

    J. Crystal Growth   Vol. 115 ( 0 ) page: 639-642   1991

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  820. Growth mechanism of gallium nitride grown on sapphire with aluminum nitride buffer layer by MOVPE Reviewed

    Hiramatsu K., Itoh S., Amano H., Akasaki I., Kuwano N., Shiraishi T., Oki K.

    J. Crystal Growth   Vol. 115 ( 0 ) page: 628-633   1991

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  821. Cross-sectional TEM study of microstructures in MOVPE gallium nitride films grown on a -alumina with a buffer layer of aluminum nitride Reviewed

    Kuwano Noriyuki, Shiraishi Tadayoshi, Koga Akihiro, Oki Kensuke, Hiramatsu Kazumasa, Amano Hiroshi, Itoh Kenji, Akasaki Isamu.

    J. Crystal Growth   Vol. 115 ( 0 ) page: 381-387   1991

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  822. Growth of single crystalline gallium nitride film on silicon substrate using 3C silicon carbide as an intermediate layer Reviewed

    Takeuchi Tetsuya, Amano Hiroshi, Hiramatsu Kazumasa, Sawaki Nobuhiko, Akasaki Isamu.

    J. Crystal Growth   Vol. 115 ( 0 ) page: 634-638   1991

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  823. MOVPE growth of gallium nitride on a misoriented sapphire substrate Reviewed

    Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu, Kato Hisaki, Koide Norikatsu, Manabe Katsuhide.

    J. Crystal Growth   Vol. 107 ( 0 ) page: 509-512   1991

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  824. Dynamics of laser sputtering at gallium nitride, gallium phosphide, and gallium arsenide surfaces Reviewed

    Namiki A., Katoh K., Yamashita Y., Matsumoto Y., Amano H., Akasaki I.

    J. Apl. Phys.   Vol. 70 ( 0 ) page: 3268-3274   1991

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  825. Metalorganic vapor phase epitaxial growth and properties of gallium mononitride/aluminum gallium nitride (Al01Ga09N) layered structures Reviewed

    Itoh Kenji, Kawamoto Takeshi, Amano Hiroshi, Hiramatsu Kazumasa, Akasaki Isamu.

    Jpn. J. Appl. Phys.   Vol. 30 ( 0 ) page: 1924-1927   1991

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  826. Stimulated emission near ultraviolet at room temperature from a gallium nitride (GaN) film grown on sapphire by MOVPE using an aluminum nitride (AlN) buffer layer Reviewed

    Amano Hiroshi, Asahi Tsunemori, Akasaki Isamu.

    Jpn. J. Appl. Phys.   Vol. 29 ( 0 ) page: L205-L206   1990

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  827. Growth and luminescence properties of magnesium-doped gallium nitride (GaN) prepared by MOVPE Reviewed

    Amano Hiroshi, Kitoh Masahiro, Hiramatsu Kazumasa, Akasaki Isamu.

    J. Electrochem. Soc.   Vol. 137 ( 0 ) page: 1639-1641   1990

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  828. UV and blue electroluminescence from aluminum/magnesium-doped gallium nitride/gallium nitride (Al/GaN:Mg/GaN) LED treated with low-energy electron beam irradiation (LEEBI) Reviewed

    Amano H., Kitoh M., Hiramatsu K., Akasaki I.

    Inst. Phys. Conf. Ser.   Vol. 106 ( 0 ) page: 725-730   1990

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  829. Preparation of aluminum gallium nitride/gallium nitride heterostructure by MOVPE Reviewed

    Ito Kenji, Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu.

    J. Crystal Growth   Vol. 104 ( 0 ) page: 533-538   1990

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  830. Growth of single crystal gallium nitride substrate using hydride vapor phase epitaxy Reviewed

    Naniwae Kouichi, Itoh Shigetoshi, Amano Hiroshi, Itoh Kenji, Hiramatsu Kazumasa, Akasaki Isamu.

    J. Crystal Growth   Vol. 99 ( 0 ) page: 381-384   1990

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  831. Cathodoluminescence of MOVPE-grown gallium nitride layer on a -alumina Reviewed

    Hiramatsu Kazumasa, Amano Hiroshi, Akasaki Isamu.

    J. Crystal Growth   Vol. 99 ( 0 ) page: 375-380   1990

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  832. P-type conduction in magnesium-doped gallium nitride treated with low-energy electron beam irradiation (LEEBI) Reviewed

    H. Amano, M. Kito, K. Hiramatsu, I. Akasaki

    Jpn. J. Appl. Phys.   Vol. 28 ( 0 ) page: L2112-L2114   1989

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  833. Effects of aluminum nitride buffer layer on crystallographic structure and on electrical and optical properties of gallium nitride and aluminum gallium nitride (Ga1-xAlxN, 0< x < 0.4) films grown on sapphire substrate by MOVPE Reviewed

    I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki

    J. Crystal Growth   Vol. 98 ( 0 ) page: 209-219   1989

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  834. Heteroepitaxial growth and the effect of strain on the luminescent properties of gallium mononitride films on (11-20) and (0001) sapphire substrates Reviewed

    H. Amano, K. Hiramatsu, I. Akasaki

    Jpn. J. Appl. Phys.   Vol. 27 ( 0 ) page: L1384-L1386   1988

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  835. Electron beam effects on blue luminescence of zinc-doped gallium mononitride Reviewed

    H. Amano, I. Akasaki, T. Kozawa, K. Hiramatsu, N. Sawaki, K. Ikeda, Y. Ishii

    J. Lumin.   Vol. 40-41 ( 0 ) page: 121-122   1988

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  836. Effects of the buffer layer in metalorganic vapor phase epitaxy of gallium mononitride on sapphire substrate Reviewed

    H. Amano, I. Akasaki, K. Hiramatsu, N. Koide, N. Sawaki

    Thin Solid Films   Vol. 163 ( 0 ) page: 415-420   1988

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  837. Zinc related electroluminescent properties in MOVPE grown gallium nitride Reviewed

    H. Amano, K. Hiramatsu, M. Kito, N. Sawaki, I. Akasaki

    J. Crystal Growth   Vol. 93 ( 0 ) page: 79-82   1988

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  838. High-efficiency blue LED utilizing gallium nitride (GaN) film with an aluminum nitride (AlN) buffer layer grown by MOVPE Reviewed

    I. Akasaki, H. Amano, K. Hiramatsu, N. Sawaki

    Inst. Phys. Conf. Ser.   Vol. 91 ( 0 ) page: 633-636   1988

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  839. Crystal growth and properties of gallium nitride and its blue light-emitting diode Reviewed

    I. Akasaki, H. Amano, N. Sawaki, M. Hashimoto, Y. Ohki, Y. Toyoda

    Jpn Ann. Rev. Elec. Comp. & Telecom.   Vol. 19 ( 0 ) page: 295-307   1986

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  840. Metalorganic vapor phase epitaxial growth of a high quality gallium nitride (GaN) film using an aluminum nitride (AlN) buffer layer Reviewed

    H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda

    Appl. Phys. Lett.   Vol. 48 ( 0 ) page: 353-355   1986

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  841. Effects of hydrogen in an ambient on the crystal growth of gallium nitride using trimethyl gallium and ammonia Reviewed

    M. Hashimoto, H. Amano, N. Sawaki, I. Akasaki

    J. Crystal Growth   Vol. 68 ( 0 ) page: 163-168   1984

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Books 32

  1. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type gan by MG doping followed by low- energy electron beam irradiation

    Amano H.( Role: Sole author)

    Nobel Lectures In Physics (2011-2015)  2022.2  ( ISBN:9789811245534

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    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid- to late 80s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed.

    Scopus

  2. 次世代半導体素材GaNの挑戦 : 22世紀の世界を先導する日本の科学技術

    天野 浩( Role: Sole author)

    講談社  2020  ( ISBN:9784065136300

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  3. 次世代半導体素材GaNの挑戦 : 22世紀の世界を先導する日本の科学技術

    天野 浩 ( Role: Sole author)

    講談社  2020  ( ISBN:9784065136300

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    Language:Japanese

    CiNii Books

  4. 電磁気学ビギナーズ講義

    大野 哲靖, 松村 年郎, 内山 剛, 横水 康伸, 天野 浩( Role: Sole author)

    培風館  2018  ( ISBN:9784563025212

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  5. 持続可能な未来のための知恵とわざ : ローマクラブメンバーとノーベル賞受賞者の対話

    林 良嗣, 中村 秀規, Weizsäcker Ernst, U. von, c, 赤崎 勇, 小宮山 宏, 天野 浩, 飯尾 歩( Role: Sole author)

    明石書店  2017  ( ISBN:9784750345512

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  6. MOCVD of Nitrides, Chapter 16 in Handbook of Crystal Growth, Second Edition

    Hiroshi Amano( Role: Joint author)

    Elsevier  2015.12 

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  7. 天野先生の「青色LEDの世界」

    天野浩、福田大展( Role: Joint author)

    講談社  2015.9  ( ISBN:978-4062579322

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    にすごいのはこれからだ! 青色LED技術の核心が分かる。
    1500回を超える実験の末に生まれた青色LEDの本体、窒化ガリウム結晶。今では電力ロスを10分の1に減らすパワー半導体や、水問題を解決する水質浄化装置など、たんなる「照明」にとどまらない多様な可能性に世界が注目しています。青色LEDはなぜ夢のある技術なのか、その原理と研究の最前線を開発者自らが分かりやすく紹介します。

  8. ワイドギャップ半導体 あけぼのから最前線へ

    天野 浩 ( Role: Joint author)

    培風館  2013.1  ( ISBN:978-4-563-06787-8

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    窒化物半導体に関する概論
    紫外発光素子応用

  9. III-Nitride Based Light Emitting Diodes and Applications, Introduction Part A. Progress and Prospect of Growth of Wide-Band-Gap III-Nitrides

    Hiroshi Amano( Role: Joint author)

    Springer  2013  ( ISBN:978-94-007-5863-6

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    Captures an accurate snapshot regarding the field and provide an insightful review to all the key issues in anticipation of the revolution in lighting technology
    Provides a comprehensive coverage of contemporary LED issues, such as efficiency droop, green gap, GaN on silicon, and high voltage LEDs, which have not been adequately discussed in the published book

  10. Bandgap Enginnering, Section two Current status of light source -LED-

    Hiroshi Amano( Role: Sole author)

    2011.12  ( ISBN:978-4-7813-0508-0

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  11. Frontier of Ultra-High Efficiency Solar Cells and their Materials

    Hiroshi Amano( Role: Sole author)

    2011.8  ( ISBN:978-4-7813-0310-9

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  12. 高効率太陽電池の開発と応用  第7章 新型太陽電池・材料 3.AlGaInN系太陽電池の可能性

    天野 浩( Role: Sole author)

    シーエムシー出版  2009.11  ( ISBN:978-4-7813-0150-1

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    AlGaInN系半導体を用いた太陽電池の可能性に関する概説

  13. GaNパワーデバイス技術開発の現状と展望

    天野 浩( Role: Joint author)

    有限会社 ブッカーズ  2009.10 

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    『次世代パワー半導体』,第2編パワーデバイス開発の最前線,第2章GaNパワーデバイスの研究開発

  14. 窒化物基板および格子整合基板の成長とデバイス特性

    飯田大輔,千田亮太,上山智,天野浩,赤﨑勇( Role: Joint author)

    シーエムシー出版  2009.10 

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    天野 浩:第1章7.「MOVPE成長」,第3章3.「ZrB2基板」, 0, 岩谷素顕,川島毅士,飯田大輔,千田亮太,上山智,天野浩,赤﨑勇:第2章「m面SiC上への非極性窒化物半導体の結晶成長」,pp.128-143

  15. 2009化合物半導体技術大全

    天野 浩( Role: Joint author)

    技術教育出版社 エヌ・ティー・エス  2009.9 

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    第2編第4章 「LEDとEDLC」

  16. Nitrides with Nonpolar Surfaces

    H. Amano, T. Kawashima, D. Iida, M. Imura, M. Iwaya, S. Kamiyama, I. Akasaki, Isamu( Role: Joint author)

    Wiley-VCH Verlag GmbH & Co. KGaA  2008.12 

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    Metalorganic vapor phase epitaxial growth of nonpolar Al(Ga,In)N films on lattice-mismatched substrates

  17. LED革新のための最新技術と展望

    天野 浩( Role: Sole author)

    情報機構  2008.11 

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    第2章第2節第1項,“GaNの成長・低転位化・実用状況・基板欠陥とGaN膜欠陥の相関

  18. RGB三原色・白色レーザーの開発

    天野 浩( Role: Joint author)

    サイエンス&テクノロジー株式会社  2007.7 

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    第5章第3節青色および紫外半導体レーザ

  19. Wide Bandgap Semiconductors

    Hiroshi Amano( Role: Joint author)

    Spriger  2007 

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    2.3.1 Doping Technology, pp.77-79, 3.5.3 Advances in UV Laser Diodes, pp.206-207

  20. 電子材料ハンドブック

    天野 浩( Role: Joint author)

    朝倉書店  2006.12 

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  21. 高周波半導体材料・デバイスの新展開

    天野 浩( Role: Joint author)

    シーエムシー出版  2006.11 

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  22. 図解 電子ディスプレイのすべて

    天野浩( Role: Joint author)

    工業調査会  2006.10 

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  23. ワイドギャップ半導体光・電子デバイス

    天野 浩( Role: Joint author)

    森北出版株式会社  2006.3 

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  24. “Nitride Semiconductors”, Handbook on Materials and Devices

    H. Amano( Role: Joint author)

    2003.7 

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  25. エピタキシャル成長のフロンティア

    天野浩( Role: Joint author)

    共立出版株式会社  2002.6 

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  26. Ⅲ族窒化物半導体

    天野浩,赤崎勇( Role: Joint author)

    培風館  1999.12 

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  27. “Gallium Nitride and Related Semiconductors”,  EMIS Datareview Series,

    H. Amano and I. Akasaki( Role: Joint author)

    1999.12 

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  28. Semiconductors and Semimetals Vol.48 High brightness light emitting diodes

    Hiroshi Amano, Isamu Akasaki( Role: Joint author)

    1997.11 

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  29. Semiconductors and Semimetals Vol.50 Gallium nitride (GaN) I

    Hiroshi Amano, Isamu Akasaki( Role: Joint author)

    1997.11 

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  30. Advances in the Understanding of Crystal Growth Mechanism

    K. Hiramatsu, T. Detchprohm, H. Amano, I. Akasaki( Role: Joint author)

    1997.8 

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  31. 青色発光デバイスの魅力

    天野 浩( Role: Joint author)

    工業調査会  1996.2 

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  32. Ⅲ-Ⅴ族化合物半導体

    天野 浩、赤崎 勇( Role: Joint author)

    培風館  1994.5 

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MISC 13

  1. Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

    Avit Geoffrey, Zeghouane Mohammed, Andre Yamina, Castelluci Dominique, Gil Evelyne, Bae Si-Young, Amano Hiroshi, Trassoudaine Agnes

    CRYSTENGCOMM   Vol. 20 ( 40 ) page: 6207-6213   2018.10

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    DOI: 10.1039/c8ce01177j

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  2. Reduction of Residual Impurities in Homoepitaxial m-Plane (10(1)over-bar0) GaN by Using N-2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

    Barry Ousmane I, Lekhal Kaddour, Bae Si-Young, Lee Ho-Jun, Pristovsek Markus, Honda Yoshio, Amano Hiroshi

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   Vol. 12 ( 8 )   2018.8

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    DOI: 10.1002/pssr.201800124

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  3. Transferrable monolithic multicomponent system for near-ultraviolet optoelectronics

    Chuan Qin, Xumin Gao, Jialei Yuan, Zheng Shi, Yuan Jiang, Yuhuai Liu, Yongjin Wang, Hiroshi Amano

    Applied Physics Express   Vol. 11 ( 5 )   2018.5

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    Language:English   Publishing type:Rapid communication, short report, research note, etc. (scientific journal)   Publisher:Japan Society of Applied Physics  

    A monolithic near-ultraviolet multicomponent system is implemented on a 0.8-mm-diameter suspended membrane by integrating a transmitter, waveguide, and receiver into a single chip. Two identical InGaN/Al0.10Ga0.90N multiple-quantum well (MQW) diodes are fabricated using the same process flow, which separately function as a transmitter and receiver. There is a spectral overlap between the emission and detection spectra of the MQW diodes. Therefore, the receiver can respond to changes in the emission of the transmitter. The multicomponent system is mechanically transferred from silicon, and the wire-bonded transmitter on glass experimentally demonstrates spatial light transmission at 200 Mbps using non-return-to-zero on–off keying modulation.

    DOI: 10.7567/APEX.11.051201

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  4. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Sugawara, Yong-Zhao Yao, Yukari Ishikawa

    APPLIED PHYSICS LETTERS   Vol. 112 ( 18 )   2018.4

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    Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that lc pure screw dislocations are related to the reverse leakage in vertical p-n diodes. Published by AIP Publishing.

    DOI: 10.1063/1.5024704

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  5. The 2018 GaN power electronics roadmap

    H. Amano, Y. Baines, E. Beam, Matteo Borga, T. Bouchet, Paul R Chalker, M. Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L. Di Cioccio, Bernd Eckardt, Takashi Egawa, P. Fay, Joseph J Freedsman, L. Guido, Oliver Häberlen, Geoff Haynes, Thomas Heckel, Dilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng Jiang, H. Kawai, Dan Kinzer, Martin Kuball, Ashwani Kumar, Kean Boon Lee, Xu Li, Denis Marcon, Martin März, R. McCarthy, Gaudenzio Meneghesso, Matteo Meneghini, E. Morvan, A. Nakajima, E. M.S. Narayanan, Stephen Oliver, Tomás Palacios, Daniel Piedra, M. Plissonnier, R. Reddy, Min Sun, Iain Thayne, A. Torres, Nicola Trivellin, V. Unni, Michael J Uren, Marleen Van Hove, David J Wallis, J. Wang, J. Xie, S. Yagi, Shu Yang, C. Youtsey, Ruiyang Yu, Enrico Zanoni, Stefan Zeltner, Yuhao Zhang

    Journal of Physics D: Applied Physics   Vol. 51 ( 16 )   2018.3

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    Language:English   Publishing type:Book review, literature introduction, etc.   Publisher:Institute of Physics Publishing  

    Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

    DOI: 10.1088/1361-6463/aaaf9d

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  6. Low cost high voltage GaN polarization superjunction field effect transistors Reviewed

    H. Kawai, S. Yagi, S. Hirata, F. Nakamura, T. Saito, Y. Kamiyama, M. Yamamoto, H. Amano, V. Unni, E. M. S. Narayanan

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   Vol. 214 ( 8 ) page: 1600834/1-10   2017.8

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    A comprehensive overview of the novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept, and a cost-effective approach towards manufacturing these high performance devices are presented. Current challenges impeding wider adoption of GaN power switching transistors in applications, and the latest results of the scaled-up PSJ-FETs from POWDEC KK, are also discussed. The article also presents hard-switching characteristics of 400-800V boost converter, constructed using a PSJ-FET grown on sapphire substrate, and the future direction of GaN power semiconductor technology based on monolithic integration for advanced power electronics.

    DOI: 10.1002/pssa.201600834

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  7. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer Reviewed

    Zheng Sun, Peifeng Song, Shugo Nitta, Yoshio Honda, Hiroshi Amano

    Journal of Crystal Growth   Vol. 468   page: 866-869   2017.6

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    DOI: 10.1016/j.jcrysgro.2017.01.31

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  8. Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity Reviewed

    Guangxu Ju, Masao Tabuchi, Yoshikazu Takeda, Hiroshi Amano

    APPLIED PHYSICS LETTERS   Vol. 110 ( 26 ) page: 262105/1-5   2017.6

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    Language:English   Publishing type:Rapid communication, short report, research note, etc. (scientific journal)   Publisher:AMER INST PHYSICS  

    Ga1-xInxN epilayers (x = 0.09 or 0.14) grown on c-plane GaN layers with different densities of threading dislocations have been investigated by real-time x-ray reflectivity during metal-organic vapor phase epitaxial growth. We found that the density of pre-existing threading dislocations in GaN plays an important role in the strain relaxation of Ga1-xInxN. Critical thicknesses were obtained and compared with theoretical predictions using the mechanical equilibrium model and the energy balance model. The critical thickness of GaInN varies inversely with dislocation density in the GaN sublayer. When the threading dislocation density in the sublayer was reduced by three orders of magnitude, the photoluminescence intensity of the Ga0.86In0.14N epilayer was improved by a factor of ten. Published by AIP Publishing.

    DOI: 10.1063/1.4990687

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  9. Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template Reviewed

    Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

    Applied Physics Express   Vol. 10   page: 025502   2017.1

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    DOI: 10.4567/APEX.10.025502

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  10. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 degrees C by metalorganic vapor phase epitaxy

    Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

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    We systematically investigated metalorganic vapor phase epitaxy (MOVPE) growths of AlN layers with trimethylgallium (TMGa) supply on sapphire substrates at 1100-1250 degrees C. We found that Ga incorporations into the AlN layers contributed to smooth surfaces covered with step terraces at the early stage of the Al(Ga)N growth. In addition, a GaN mole fraction leading to the smooth surfaces was found to be around 2-3% at the beginning of growth. The Ga supply during the AlN layer growth at 1150 degrees C provided very smooth Al0.99Ga0.01N layers on sapphire substrates. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.56.015504

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  11. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 degrees C by metalorganic vapor phase epitaxy Reviewed

    Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 ) page: 015504   2017.1

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    Language:English   Publishing type:Rapid communication, short report, research note, etc. (scientific journal)   Publisher:IOP PUBLISHING LTD  

    We systematically investigated metalorganic vapor phase epitaxy (MOVPE) growths of AlN layers with trimethylgallium (TMGa) supply on sapphire substrates at 1100-1250 degrees C. We found that Ga incorporations into the AlN layers contributed to smooth surfaces covered with step terraces at the early stage of the Al(Ga)N growth. In addition, a GaN mole fraction leading to the smooth surfaces was found to be around 2-3% at the beginning of growth. The Ga supply during the AlN layer growth at 1150 degrees C provided very smooth Al0.99Ga0.01N layers on sapphire substrates. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.56.015504

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  12. Development of Sustainable Smart Society based on Transformative Electronics

    Ogura M, Ando Y, Usami S, Nagamatsu K, Kushimoto M, Deki M, Tanaka A, Nitta S, Honda Y, Pristovsek M, Kawai H, Yagi S, Amano H

    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     page: .   2017

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  13. From the Dawn of GaN-Based Light-Emitting Devices to the Present Day

    Amano Hiroshi

    HANDBOOK OF SOLID-STATE LIGHTING AND LEDS     page: 3-11   2017

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Presentations 487

  1. A journey full of challenges How a poor university sparked the LED revolution and the continual impact in the future smart society Invited

    Hiroshi Amano

    Nyquist Lecture   2023.9.19  Yale University

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Yale University   Country:United States  

  2. 何故、今の日本でスタートアップが必要か Invited

    天野 浩

    ディープテックシリアルイノベーションセンター 開所式  2023.9.11  名大

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名大   Country:Japan  

  3. 新エレクトロニクスが創る近未来社会 Invited

    天野 浩

    IEICE ICT Pioneers Webinar シリーズ  2023.9.6  電子情報通信学会

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  4. 大学が果たすべき役割と TELオーディトリアムへの期待 Invited

    天野 浩

    TElオーディトリアムオープニングイベント  2023.9.5  TEL

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名大   Country:Japan  

  5. How a poor university sparked the LED revolution and the continual impact in the future smart society Invited

    Hiroshi Amano

    Royal Palm Lecture Series   2023.9.1  National Taiwan University

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Taiwan   Country:Taiwan, Province of China  

  6. GaN Electronics SupportingThe World After 2025 Invited International conference

    Hiroshi Amano

    TSMC seminar  2023.9.1  TSMC

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Taiwan   Country:Taiwan, Province of China  

  7. できっこないに挑戦する楽しみ どうすれば新しい産業を興すきっかけをつくれるか? Invited

    天野 浩

    第17回創造性の育成塾   2023.7.31  創造性の育成塾 

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    Event date: 2023.7

    Language:Japanese  

    Venue:東京   Country:Japan  

  8. 窒化物半導体への取り組み これまでの10年と未来社会での役割 Invited

    天野 浩

    JPC関西  2023.7.19  JPC関西

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    Event date: 2023.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:大阪   Country:Japan  

  9. GaN on GaNデバイスのビジネス化と将来への道筋-高効率基板加工技術開発の重要性- Invited

    天野 浩

    次世代単結晶基板のための実用加工技術検討会(第2回)  2023.7.18  精密工学会「プラナリゼーションCMPとその応用専門委員会」 一般社団法人GaNコンソーシアム 結晶・評価WG

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    Event date: 2023.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:長岡   Country:Japan  

  10. How to make the most of your gifted talents Invited International conference

    Hiroshi Amano

    IPhO2023  2023.7.14  IPhO2023

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Tokyo   Country:Japan  

  11. 新半導体の魅力 Invited

    天野 浩

    つくばサイエンスアカデミー  2023.7.6  つくばサイエンスアカデミー

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    Event date: 2023.7

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:つくば   Country:Japan  

  12. 2030年以降の日本の半導体業界を背負う若手研究者に向けて 20代後半~30代前半の研究者へのメッセージ Invited

    天野 浩

    半導体産業活性化  2023.6.18  セミジャパン

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    Event date: 2023.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:高槻   Country:Japan  

  13. 2123年の日本、世界と工学部の役割 Invited

    天野 浩

    新潟大学工学部100周年記念   2023.6.3  新潟大学

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    Event date: 2023.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:新潟   Country:Japan  

  14. 稼げる研究と人材の育て方 Invited

    天野 浩

    あいちフィナンシャルグループ  2023.5.23  駐日新聞社

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    Event date: 2023.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋   Country:Japan  

  15. GaN Electronics Supporting Japan and The World After 2030 Invited International conference

    Hiroshi Amano

    2023.5.23 

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    Event date: 2023.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  16. これからの理科教育 Invited

    天野 浩

    日本理科教育振興協会 第52回定時総会 理科好き人間の育て方  2023.5.16  日本理科教育振興協会 

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    Event date: 2023.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京   Country:Japan  

  17. SDGsに貢献する新半導体 Invited

    天野 浩

    名古屋大学全学同窓会岐阜支部 令和5年度特別講演会   2023.5.6  名古屋大学全学同窓会岐阜支部 

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    Event date: 2023.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:岐阜   Country:Japan  

  18. 研究室と社会をつなぐあいちシンクロトロン光センター Invited

    天野 浩

    あいちシンクロトロン光センター 10周年記念  2023.4.20  あいちシンクロトロン光センター

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    Event date: 2023.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:あいちシンクロトロン光センター   Country:Japan  

  19. GaN as a key material for power and signal management as well as photon and electron source Invited

    Hiroshi Amano

    SEMINAR Molecular Foundry Lawrence Berkeley National Laboratory  2023.3.8  Lawrence Berkeley National Laboratory

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    Event date: 2023.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:online   Country:United States  

  20. 精神的自立 どこに行っても生きていける気持ちを持つために必要なこと Invited

    天野 浩

    博士へのトビラ 名大大学院で過ごす5年間  2023.2.18  名古屋大学

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    Event date: 2023.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  21. Wide bandgap and ultrawide bandgap semiconductors Invited International conference

    Hiroshi Amano

    Advance Functional Materials  2023.1.10  Kyushu University

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    Event date: 2023.1

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:online   Country:Japan  

  22. 2122年を目指した研究開発戦略 Invited

    天野 浩

    旭化成100周年記念  2022.11.29  旭化成

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    Event date: 2022.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  23. 日本発の技術を結集して 世界のカーボンニュートラル実現に貢献する! Invited

    天野 浩

    半導体テクノロジーシンポジウム  2022.11.28  東北大学

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    Event date: 2022.11

    Language:Japanese  

    Venue:東京   Country:Japan  

  24. How to increase investment in GaN? Invited International conference

    Hiroshi Amano

    APWS2022  2022.11.14  APWS2022

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    Event date: 2022.11

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:online   Country:Taiwan, Province of China  

  25. もし君がノーベル賞を受賞したら Invited

    天野 浩

    IEEE 広島・四国・福岡YP  2022.11.12  IEEE 広島・四国・福岡YP

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    Event date: 2022.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:広島市立大学   Country:Japan  

  26. 世界を変えるGaN Invited

    天野 浩

    オリンパス東海セミナー  2022.10.21  オリンパス東海

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    Event date: 2022.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋   Country:Japan  

  27. Memorial talk of late Professor Isamu Akasaki Invited International conference

    Hiroshi Amano

    ISLC2022  2022.10.19  ISLC

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    Event date: 2022.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:online   Country:Japan  

  28. Deep-UV laser diode: An example of overcoming the semiconducting limi Invited International conference

    Hiroshi Amano

    IWN2022  2022.10.10  IWN2022

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    Event date: 2022.10

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Berlin   Country:Germany  

  29. これまでの100年、これからの100年 Invited

    天野 浩

    静岡大学浜松キャンパス100周年  2022.9.24  静岡大学

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  30. GaN on GaNデバイス・システムのこれまでの取り組みと 社会実装に向けた課題 Invited

    天野 浩

    最先端GaN基盤半導体導入促進セミナー  2022.9.12  環境省 日経BP

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京   Country:Japan  

  31. ワイドギャップパワー半導体の社会実装に向けてのロードマップ Invited

    天野 浩

    ワイドギャップパワー半導体の現状と今後  2022.9.6  特定非営利活動(NPO)法人 高周波・アナログ半導体ビジネス研究会

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  32. If you become the Nobel Laureate Invited

    2022.8.27 

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    Event date: 2022.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  33. ディープテックの社会実装加速に貢献する人材育成の取り組み Invited

    天野 浩

    t東京オープンイノベーションカレッジ  2022.7.25  東京東海証券

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    Event date: 2022.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京   Country:Japan  

  34. 次世代パワー半導体がもたらすグリーン・デジタル化社会 Invited

    天野 浩

    2022.6.2  福岡県半導体デジタル産業振興会

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    Event date: 2022.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  35. Message from Far East Asia to Young Researchers in Moldova Invited

    Hiroshi Amano

    Moldova seminar   2022.5.24  Science Academy of Moldova

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:online   Country:Moldova, Republic of  

  36. How can university and industry work together to direct innovation? Invited International conference

    Hiroshi Amano

    THE Asia Universities Summit   2022.5.19  THE

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Fujita Health University   Country:Japan  

  37. 基礎研究成果の社会実装加速のための取り組み Invited

    天野 浩

    第138回中部整形外科災害科学会学術集会  2022.4.8  中部整形外科災害科学会学術集会

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    Event date: 2022.4

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:ウィンクあいち   Country:Japan  

  38. 昨今の半導体不足と電力消費削減のためのワイドギャップ半導体の役割 Invited

    天野 浩

    国際ロータリー第2760地区②021-2022年度東尾張分区インターシティミーティング  2022.3.12  国際ロータリー第2760地区②021-2022年度東尾張分区インターシティミーティング

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:瀬戸蔵つばきホール   Country:Japan  

  39. Frontier Electronics As “Pain Killer” of Our Society and Environments Invited International conference

    Hiroshi Amano

    ISPlasma2022/IC-Plants2022  2022.3.7  ISPlasma2022/IC-Plants2022

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    Event date: 2022.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Online   Country:Japan  

  40. Protecting people from virus infection with a compact DUV light source  Invited International conference

    Hiroshi Amano

    The 2nd Japan-ASEAN Multi-Stakeholder Strategic Consultancy Forum  2022.2.23  JST

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    Event date: 2022.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:online   Country:Japan  

  41. Frontier Electronics in Memory of Professor Isamu Akasaki Invited International conference

    Hiroshi Amano

    SPIE2022  2022.1.24  SPIE

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    Event date: 2022.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:online   Country:United States  

  42. Message from the Program Coordinator Invited International conference

    Hiroshi Amano

    DII Collaborative Graduate Program for Accelerating Innovation in Future Electronics  2022.1.20  DII

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    Event date: 2022.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Nagoya University   Country:Japan  

  43. Illuminating the World with LEDs

    Hiroshi Amano

    Tashkent State Technocal University Seminar  2022.1.6  Tashkent State Technocal University

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    Event date: 2022.1

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:online   Country:Russian Federation  

  44. フロンティアエレクトロニクスの 社会実装に向けた取り組み Invited

    天野 浩

    R025 先進薄膜界面機能創成委員会  2021.12.16  先進薄膜界面機能創成委員会

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東大武田先端知ビル武田ホール    Country:Japan  

  45. Challenge to eradicate virus infection with a compact DUV light source  Invited International conference

    Hiroshi Amano

    STI for Global Challenges International Research Collaboration Against the COVID-19  2021.12.1  Japan Science and Technology Agency and Asia-Europe Foundation

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:online   Country:Japan  

  46. 日本型イノベーション創出システムの構築 Invited

    天野 浩

    日経SDGsフェスinどまんなか  2021.12.1  日経

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋   Country:Japan  

  47. 日本型イノベーション創出システム構築 のための取り組み Invited

    天野 浩

    北大ノーベル賞受賞者フォーラム 次世代へのメッセージ  2021.11.27  読売新聞

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    Event date: 2021.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:北大   Country:Japan  

  48. 未来の開拓者になるために必要な経験 Invited

    天野 浩

    名古屋工業大学フロンティア研究院シンポジウム  2021.11.25  名古屋工業大学

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    Event date: 2021.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋工業大学   Country:Japan  

  49. Introduction to C-TEFs and Future Prospects of GaN-Based Micro-LED Display   Invited International coauthorship

    Hiroshi Amano

    GIST Nobel Center   2021.11.11  GIST

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    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:online   Country:Korea, Republic of  

  50. 青色LEDが生まれるまでと皆さんが作る新しい社会 Invited

    天野 浩

    高浜市 セミナー  2021.11.9  高浜市

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    Event date: 2021.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  51. 日本発イノベーションシステム構築の条件 Invited

    天野 浩

    サイエンスアゴラ  2021.11.6  JST

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    Event date: 2021.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  52. Past, Present and Future Prospects of Frontier Electronics Invited

    Hiroshi Amano

    GUTech Seminar  2021.11.4  GUTech

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    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:online   Country:Oman  

  53. シリコンと相補的なワイドギャップ 化合物半導体の将来戦略 Invited

    天野 浩

    半導体・デジタル産業を考える講演会  2021.10.12  ふくおかIST(糸島)3次元半導体研究センター

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ふくおかIST(糸島)3次元半導体研究センター   Country:Japan  

  54. 如何に投資を呼び込むか? WideGと研究者の役割 Invited

    天野 浩

    WideG 研究会  2021.10.8  WideG

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  55. What issue the young generations think the most important? Invited

    Hiroshi Amano

    Tsukuba Conference 2021  2021.9.29  JST

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:online   Country:Japan  

  56. フロンティアエレクトロニクス Invited

    天野 浩

    応用物理学科宇赤﨑先生追悼シンポジウム  2021.9.11  応用物理学会

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名城大学   Country:Japan  

  57. New materials and devices fabrication change the world Invited

    Hiroshi Amano

    Applied Materials Seminar   2021.8.12  Applied Materials

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    Event date: 2021.8

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:online   Country:United States  

  58. Economical profit of establishing a renewable energy based society Invited

    Hiroshi Amano

    Academy of Science of Moldova  2021.6.10  Academy of Moldova

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    Event date: 2021.6

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:online  

  59. Building a graduate student curriculum that produces the talent to lead future innovation Invited International conference

    Hiroshi Amano

    THE Asia Universities Summit   2021.5.26  Time Higher Education

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    Event date: 2021.5

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Fujita Health University   Country:Japan  

  60. GaN device as a key technology for realizing carbon neutral society Invited International conference

    Hiroshi Amano

    EVTeC2021  2021.5.25  EVTeC

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    Event date: 2021.5

    Language:English  

    Venue:online   Country:Japan  

  61. Economical profit of establishing a renewable energy based society Invited International conference

    Hiroshi Amano

    Association of Pacific Rim Universities   2021.4.16  Association of Pacific Rim Universities

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    Event date: 2021.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:online   Country:Japan  

  62. 再生可能エネルギー普及拡大の 経済効果と技術課題

    天野 浩

    日本経済研究センター  2021.4.7  日本経済研究センター

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    Event date: 2021.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

  63. Our Activities After 2014 Invited International conference

    Hiroshi Amano

    THE JAPAN-SWEDEN SOCIETY    2021.4.6  THE JAPAN-SWEDEN SOCIETY

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    Event date: 2021.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  64. 再生可能エネルギーの経済合理性と新技術イノベーションによる カーボンニュートラル社会への貢献 Invited

    天野 浩

    脱炭素社会構築シンポジウム 「気候変動を踏まえた脱炭素社会の実現に向けて」  2020.12.20  環境省

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:京都 国立京都国際会館     Country:Japan  

  65. 研究は誰のため? Invited

    天野 浩

    公正な研究活動の推進に関するFD講演会 (佐賀大学)  2020.11.12  佐賀大学

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:佐賀大学   Country:Japan  

  66. 機械と電気のコラボの重要性 Invited

    天野 浩

    日本機械学会 2020年度年次大会  2020.9.15  日本機械学会

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    Event date: 2020.9

    Language:Japanese  

    Venue:オンライン   Country:Japan  

  67. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

    Liao Y.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1109/ISPSD46842.2020.9170101

    Scopus

  68. Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy α-particle detection

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    Event date: 2020.4

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1109/EDTM47692.2020.9118000

    Scopus

  69. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

    Piva F.

    Proceedings of SPIE - The International Society for Optical Engineering 

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    Event date: 2020

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1117/12.2544704

    Scopus

  70. Visualizing intestines for diagnostic assistance of ileus based on intestinal region segmentation from 3D CT images

    Oda H.

    Progress in Biomedical Optics and Imaging - Proceedings of SPIE 

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    Event date: 2020

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1117/12.2548910

    Scopus

  71. Electronic structure analysis of core structures of threading dislocations in GaN

    Nakano T.

    2019 Compound Semiconductor Week, CSW 2019 - Proceedings 

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    Event date: 2019.5

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1109/ICIPRM.2019.8819270

    Scopus

  72. Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD

    Abhinay S.

    2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 

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    Event date: 2019.3

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1109/EDTM.2019.8731215

    Scopus

  73. Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes

    Yates L.

    Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018 

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1109/ITHERM.2018.8419481

    Scopus

  74. Theoretical study of the electronic structure of threading edge dislocations in GaN

    Nakano T.

    ECS Transactions 

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    Event date: 2018

    Language:English   Presentation type:Oral presentation (general)  

    DOI: 10.1149/08612.0041ecst

    Scopus

  75. 世界を照らすLED Invited

    天野 浩

    平成28年度(一社)名古屋薬業倶楽部 講演会 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:アイリス愛知 2F コスモス   Country:Japan  

  76. 世界を照らすLED Invited

    天野 浩

    株式会社ニデック 創立45周年記念講演 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ニデック拾石工場第5棟3F セミナーホールA/B   Country:Japan  

  77. 世界を照らすLED Invited

    天野 浩

    2016-17年度国際ロータリーゾーン1.2.3 第45回ロータリー研究会 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ウェスティンナゴヤキャッスル   Country:Japan  

  78. 世界を照らすLED Invited

    天野 浩

    教育シンポジウム 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:浜松市内   Country:Japan  

  79. 世界を照らすLED Invited

    天野 浩

    サイエンスプラザ 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:NTT物性科学基礎研究所   Country:Japan  

  80. 子どもたちの未来のために今私たちができること Invited

    天野 浩

    第10回かけがわ教育の日 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:掛川市生涯学習センター   Country:Japan  

  81. 世界を照らす青色LED Invited

    天野 浩

    シニアフェローデイ 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:豊田中央研究所 アクタスアリーナ   Country:Japan  

  82. 世界を照らすLED Invited

    天野 浩

    幸田プレステージレクチャーズ 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:幸田ハッピネスヒル   Country:Japan  

  83. 超スマート・持続可能社会を実現するための窒化物デバイスの役割 Invited

    天野 浩

    平成28年度愛知地域スーパークラスター成果報告会 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋国際センター別棟ホール   Country:Japan  

  84. 世界を照らすLED Invited

    天野 浩

    第26回全国産業教育フェア石川大会 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:石川県産業展示館4号館 特設会場   Country:Japan  

  85. 青色LEDにおけるJSTの貢献と未来のイノベーション創出への期待 Invited

    天野 浩

    創立20周年記念式典 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京国際フォーラム B5ホール   Country:Japan  

  86. 新時代を築く エネルギーイノベーション創出への挑戦 Invited

    天野 浩

    メッセナゴヤ2016 

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    Event date: 2016.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ポートメッセなごや   Country:Japan  

  87. 社会が期待する窒化物半導体光・電子デバイス  Invited

    天野 浩

    学振162委員会100回研究会記念シンポジウム・祝賀会 

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    Event date: 2016.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京大学生産技術研究所コンベンションホール   Country:Japan  

  88. Present and Future Prospects of UV/DUV LEDs and LDs Invited International conference

    天野 浩

    RadTech Asia 2016 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:ヒルトン東京お台場   Country:Japan  

  89. Blue LEDs and Future Electronics for Establishing Sustainable Society Invited International conference

    天野 浩

    NCSU 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:NCSU   Country:Japan  

  90. (Dr. Amano's research and his interests for the next) Invited International conference

    天野 浩

    DOE 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:DOE   Country:Japan  

  91. (窒化ガリウムプロジェクトの概要) Invited International conference

    天野 浩

    DOE 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:DOE   Country:Japan  

  92. 世界を照らすLED Invited

    天野 浩

    神戸高校教育講演会 

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    Event date: 2016.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:鈴鹿市民会館   Country:Japan  

  93. GaNの工学と未来社会へのインパクト Invited

    天野 浩

    Tokyo Tech Inspiring Lecture Series 

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    Event date: 2016.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:大岡山キャンパス   Country:Japan  

  94. Lighting the Earth with LEDs Invited International conference

    天野 浩

    Molecular Frontiers Symposium 2016 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:東京理科大学神楽坂キャンパス   Country:Japan  

  95. 世界を照らすLED Invited

    天野 浩

    富国生命経済講演会 

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    Event date: 2016.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:リーガロイヤルホテル(大阪)   Country:Japan  

  96. 世界を照らすLED Invited

    天野 浩

    ATAC25周年記念講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:大阪科学技術センター8F大講堂   Country:Japan  

  97. Blue LEDs and Future Electronics for Establishing a Sustainable Society Invited International conference

    天野 浩

    Midi-MINATEC 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:MINATEC   Country:Japan  

  98. 青色LEDに見るイノベーション創出の経緯と研究者の志向の重要性 Invited

    天野 浩

    丸文財団20周年記念シンポジウム 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:新潟コンベンションセンター 朱鷺メッセ   Country:Japan  

  99. 世界を照らすLED Invited

    天野 浩

    日本物理学会市民科学講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:石川県立音楽堂 邦楽ホール   Country:Japan  

  100. 世界を照らすLED Invited

    天野 浩

    岡崎市民大学 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:岡崎中央総合公園 武道場   Country:Japan  

  101. 世界を照らすLED Invited

    天野 浩

    2016年度名古屋大学 機器・分析技術研究会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:学内   Country:Japan  

  102. 照明学会百周年に寄せて Invited

    天野 浩

    一般社団法人 照明学会 100周年事業 記念講演 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:sola city Conference Center(東京 御茶ノ水)   Country:Japan  

  103. Blue LEDs and Future Electronics for Establishing Sustainable Society Invited International conference

    天野 浩

    XXV International Materials Research Congress (IMRC2016) 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:JW Marriott Hotel in Cancun, Mexico   Country:Japan  

  104. Growth of nitride crystals to solve global issues Invited International conference

    天野 浩

    ICCGE-18 Plenary Talk 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:名古屋国際会議場   Country:Japan  

  105. 世界を照らすLED Invited

    天野 浩

    ICCGE-18 市民講座 

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    Event date: 2016.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:坂田・平田ホール   Country:Japan  

  106. Development of GaN-Based Blue LEDs and Metalorganic Vapor Phase Epitaxy of GaN and Related Materials Invited

    天野 浩

    第16階結晶成長国際スクール【講義】 

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    Event date: 2016.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:同志社大学リトリートセンター   Country:Japan  

  107. Lighting the Earth with LEDs Invited International conference

    天野 浩

    Colloquium at Tsinghua University 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Tsinghua University   Country:Japan  

  108. Nitrides as tools for solving global issues Invited International conference

    天野 浩

    33rd International Conference on the Physics of Semiconductors (ICPS2016) 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Beijing International Convention Center   Country:Japan  

  109. 世界を照らすLED Invited

    天野 浩

    中日文化センター 開講50周年記念講演会 

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    Event date: 2016.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:栄中日文化センター   Country:Japan  

  110. 世界を照らすLED Invited

    天野 浩

    第28回愛知サマーセミナー 

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    Event date: 2016.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋市内   Country:Japan  

  111. 世界を照らすLED Invited

    天野 浩

    三重大学工学部同窓会特別講演会 

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    Event date: 2016.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:三重大学三翠ホール 大講堂   Country:Japan  

  112. 世界を照らすLED Invited

    天野 浩

    東海北陸中学校長会研究協議会 静岡大会 

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    Event date: 2016.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:静岡県コンベンションアーツセンター グランシップ   Country:Japan  

  113. LEDが照らす日本と世界の明るい未来 Invited

    天野 浩

    大阪市立工業研究所創立百周年・大阪工研協会創立九十年周年記念事業 

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    Event date: 2016.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:大阪国際交流センター   Country:Japan  

  114. Lighting the Earth by LEDs Invited International conference

    天野 浩

    66th Lindau Nobel Laureate Meeting 2016 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Lindau(ドイツ)   Country:Japan  

  115. 未来エレクトロニクス集積研究センター紹介 Invited

    天野 浩

    名古屋大学未来材料・システム研究所設立記念講演会 

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    Event date: 2016.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:坂田・平田ホール   Country:Japan  

  116. 世界を照らすLED Invited

    天野 浩

    統合物質創製化学研究推進機構 開所式及び記念講演会 

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    Event date: 2016.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:野依記念物質科学研究館2F講演室   Country:Japan  

  117. 世界を照らすLED Invited

    天野 浩

    経済同友会 

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    Event date: 2016.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ホテルニューオータニー ガーデンコート 宴会場階「シリウスの間」   Country:Japan  

  118. 明日をになう子どもたちへのメッセージ Invited

    天野 浩

    キッズサイエンス 10周年特別講演会 

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    Event date: 2016.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:信州科学技術総合振興センター(信大工学部内)   Country:Japan  

  119. Lighting the Earth by LEDs Invited International conference

    天野 浩

    ISCSI-VII & ISTDM2016 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:野依記念学術交流館   Country:Japan  

  120. 世界を照らすLED Invited

    天野 浩

    長岡工業高等専門学校 特別講演会 

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    Event date: 2016.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:長岡市立劇場 大ホール   Country:Japan  

  121. 世界を照らすLED Invited

    天野 浩

    斐太高等学校創立130周年記念式典 

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    Event date: 2016.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:高山市民文化会館   Country:Japan  

  122. 世界を照らすLED Invited

    天野 浩

    静岡学園中学校・高等学校 創立50周年記念式典 記念講演 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:グランシップ 大ホール・海   Country:Japan  

  123. Lighting the World by LEDs Invited International conference

    天野 浩

    LS15 国際シンポジウム 

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    Event date: 2016.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:京都大学   Country:Japan  

  124. 世界を照らすLED Invited

    天野 浩

    第29回 新世紀政経フォーラム 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ザ・キャピタルホテル東急1階「鳳凰の間」   Country:Japan  

  125. GaNによる省エネルギー社会への貢献と事業構想 Invited

    天野 浩

    省エネルギー社会の実現に資する次世代半導体研究開発 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:学術総合センター一橋講堂   Country:Japan  

  126. 産業用LEDの将来展望 Invited

    天野 浩

    JPC産業用LED応用研究会&工学院大学2016年5月合同講演会 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:工学院大学新宿校舎・アーバンテックホール   Country:Japan  

  127. 安西祐一郎先生文化功労者顕彰を記念して、先生への御礼を兼ねて Invited

    天野 浩

    安西先生の文化功労者記念シンポジウム 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:慶應義塾大学日吉キャンパス協生館藤原洋記念ホール   Country:Japan  

  128. 世界を照らすLED Invited

    天野 浩

    名古屋大学全学同窓会関西支部 第11回総会懇親会  

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:中央電気倶楽部   Country:Japan  

  129. 世界を照らすLED Invited

    天野 浩

    火曜会「講演会」 (トヨタグループ17社の役員OB(=火曜会)) 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋マリオットアソシアホテル16F「タワーズボールルーム」   Country:Japan  

  130. Nitrides as tools for solving global issues Invited International conference

    天野 浩

    Cambridge (5/5) 

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    Event date: 2016.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Cambridge(イギリス)   Country:Japan  

  131. Lighting the Earth by LEDs Invited International conference

    天野 浩

    UP-VLC Open Day event at RAEng (5/4) 

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    Event date: 2016.5

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:London(イギリス)   Country:Japan  

  132. History of the development of blue LED and Collaboration with Institute Pascal for INSOLIUM Project Invited International conference

    天野 浩

    Doctor Honoris Causa ceremony (5/2) 1. Université ďAuverge, 2. Université Blaise Pascal 

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    Event date: 2016.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Clermont Ferrand(フランス)   Country:Japan  

  133. Nitrides as tools for solving global issues Invited International conference

    天野 浩

    Seminar in the Institut Pascal for the physics researchers (5/2) 

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    Event date: 2016.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Clermont Ferrand(フランス)   Country:Japan  

  134. Nitrides as tools for solving global issues Invited International conference

    天野 浩

    Workshop "Gallium Nitride technology in Europe"(4/28) 

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    Event date: 2016.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Padova(イタリア)   Country:Japan  

  135. Development of blue LEDs Invited International conference

    天野 浩

    Lectio Magistralis(Honoris Causa ceremony) (4/28) 

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    Event date: 2016.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Padova(イタリア)   Country:Japan  

  136. In the frontires of efficiency in light generation Invited International conference

    天野 浩

    CSEM event with Nobel Prize winner Professor Hiroshi Amano(4/26) 

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    Event date: 2016.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Neuchâtel(スイス)   Country:Japan  

  137. 次世代産業基盤GaNナノテクノロジー Invited

    天野 浩

    自民党ナノテクノロジー議連 勉強会 

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    Event date: 2016.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  138. 窒化物半導体先進デバイスオープンイノベーションラボラトリ(GaN-OIL)への期待 Invited

    天野 浩

    産総研・名大窒化物半導体先進デバイスオープンイノベーションラボラトリ開所式 

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    Event date: 2016.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ESホール   Country:Japan  

  139. The History of the Development of Blue UV-LEDs and their future society it affects Invited

    天野 浩

    日機装・威高集団・FPC特別講演会(4/10) 

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    Event date: 2016.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:上海   Country:Japan  

  140. Lighting the Earth by LEDs Invited International conference

    天野 浩

    モンゴル 

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    Event date: 2016.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Tuussin Hotel   Country:Japan  

  141. 青色及び紫外光デバイスの開発 Invited

    天野 浩

    応用物理学会「化学物半導体エレクトロニクス業績賞(赤﨑勇賞)受賞記念講演」 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  142. 未来をつくる君たちへ Invited

    天野 浩

    第2回子供たちのための講演会2014年ノーベル物理学賞受賞 天野浩教授 講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:日進市民会館大ホール   Country:Japan  

  143. 世界を照らすLED Invited

    天野 浩

    三田学園高等学校 特別講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:小寺ホール   Country:Japan  

  144. 世界を照らすLED Invited

    天野 浩

    志野流香道松隠会 会合 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋国際会議場   Country:Japan  

  145. 未来をつくる君たちへ Invited

    天野 浩

    小・中学生 山梨市ノーベル科学賞表彰式 記念講演 及び 科学工作教室 

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    Event date: 2016.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:花かげホール   Country:Japan  

  146. 世界を照らすLED Invited

    天野 浩

    ふくいサイエンスフェスタ2015 

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    Event date: 2016.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:福井県県民ホール   Country:Japan  

  147. 世界を照らすLED Invited

    天野 浩

    豊橋市地下資源館開館35周年記念 天野浩先生講演会 

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    Event date: 2016.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:穂の国とよはし芸術劇場プラット   Country:Japan  

    名大でどのように青色LED研究が行われたかについて、解説した。

  148. トークセッション「持続可能な未来のための知恵とわざ」 Invited

    天野 浩

    エルンスト・フォン・ワイツゼッカー教授名誉博士授与記念講演&ローマクラブ共同会長・ノーベル賞受賞者らによるトークセッション 

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    Event date: 2016.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学ESホール   Country:Japan  

    様々なグローバル問題に対して、どのように解決の糸口を見つけるか。

  149. 世界を照らすLED Invited

    天野 浩

    平成27年度名古屋観光コンベンションビューロー賛助会員のつどい 財団設立25周年記念講演 

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    Event date: 2016.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋観光ホテル 3F 那古西   Country:Japan  

    名古屋は何故観光には魅力がないかを徹底検証する。

  150. 世界を照らすLED Invited

    天野 浩

    SGH講演会 

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    Event date: 2016.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学教育学部附属中・高等学校   Country:Japan  

    高校生向けに、高校で学ぶべきこと、身に着けるべきこと

  151. 窒化物半導体による低炭素社会構築への貢献 Invited

    天野 浩

    文科省GRENEプロジェクト 最終年度報告会 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京ビッグサイト   Country:Japan  

    GaN系パワーデバイスによる持続可能な社会構築への貢献

  152. 世界を照らすLED Invited

    天野 浩

    小川科学技術財団創立30周年記念講演会 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ソフトピアジャパンセンター「ソピアホール」   Country:Japan  

    GaNの青色LED 深紫外LED及びパワーデバイス

  153. 研究者として生きる ソニーに期待する事 Invited

    天野 浩

    天野先生講演会&座談会 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ソニー(厚木)   Country:Japan  

    研究者として大切なことを議論する

  154. 世界を照らすLED Invited

    天野 浩

    名古屋大学 関東支部総会 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京   Country:Japan  

    GaN系青色LED開発の歴史、深紫外線LED及びパワーデバイスの今後の可能性について

  155. '-ノーベル賞受賞から1年-青色LEDに続く未来へのメッセージ Invited

    天野 浩

    福井大学 特別講演会 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:フェニックスプラザ大ホール   Country:Japan  

    ノーベル賞授賞式の様子及びこれから何をしようとしているか、紹介した。

  156. Present and Future Prospects of GaN-based Light Emitting Devices Invited International conference

    LGIT Consultant 

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    Event date: 2016.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  157. 青色LEDとレーザーが拓く未来 Invited

    天野 浩

    レーザー学会全国大会 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名城大学   Country:Japan  

    GaN青色LED及びレーザダイオード開発の歴史

  158. 世界を照らすLED Invited

    天野 浩

    平成28年東山会新年同窓会 特別講演 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名鉄ニューグランドホテル   Country:Japan  

    何故名古屋大学で青色LEDができたのか。

  159. 世界を照らすLED Invited

    天野 浩

    学士会「平成28年新春講演会」 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:学士会館(東京)   Country:Japan  

    GaN青色LED 深紫外LED及びパワーデバイス開発

  160. 世界を照らすLED Invited

    天野 浩

    九州大学GSC(グローバルサイエンスキャンパス) 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:九州大学伊都キャンパス 椎木講堂   Country:Japan  

    学生、若手研究者向けに、どのような心構えで青色LED研究を続けたかを説明した。

  161. 青色LED研究開発の歴史と及び今後の研究開発の方向性を探る Invited

    天野 浩

    ブラザー工業 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ブラザー工業 瑞穂工場   Country:Japan  

    GaN LED開発のポイントと今後のパワーデバイス開発への道筋

  162. 世界を照らすLED Invited

    天野 浩

    丸八会 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:名古屋マリオットホテル   Country:Japan  

    GaN青色LED開発n歴史と今後の材料開発

  163. 世界を照らすLED Invited

    天野 浩

    愛名会・中産連 合同会員懇話会 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋国際ホテル   Country:Japan  

    1980年代の名大での青色LED研究の様子

  164. Lighting the Earth by LEDs Invited International conference

    IDW'15 

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    Event date: 2015.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  165. 窒化物半導体デバイスの歴史と今後の展開 Invited

    天野 浩

    日本半導体製造装置協会 創立30周年記念講演会 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:一橋大学一橋講堂   Country:Japan  

    GaN青色LED開発の歴史

  166. プラズマ援用による新材料創成 Invited

    天野 浩

    第32回プラズマ・核融合学会 年会 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:豊田講堂   Country:Japan  

    GaNデバイス作製におけるプラズマの利用

  167. 固体素子が拓く未来と医療応用 Invited

    天野 浩

    名古屋大学医学部第一内科同窓会 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋観光ホテル   Country:Japan  

    GaN青色LED開発の歴史

  168. Seeking Future Electronics for Better Human Life Invited International conference

    Hiroshi Amano

    ICAE2015 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Korea, Republic of  

  169. 未来ビジョンと突破力 Invited

    天野 浩

    応用物理学会東海支部50周年記念講演会 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学IB大講義室   Country:Japan  

    研究者にとって大切な未来を見据える考え方

  170. NEC C&Cユーザーフォーラム&iEXPO2015 **対談** Invited

    天野 浩

    NEC C&Cユーザーフォーラム&iEXPO2015 **対談** 

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    Event date: 2015.11

    Language:Japanese  

    Venue:東京国際フォーラム   Country:Japan  

    GaN研究開発の裏話

  171. 青色LED研究に見る日本の大学の社会貢献のためのこれからの方向性 Invited

    天野 浩

    サイエンスアゴラ 開幕セッション 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京国際交流館   Country:Japan  

    これからの材料研究の方向性

  172. Lighting the Earth by LEDs Invited International conference

    Hiroshi Amano

    Korea Maritime and Ocean University Special Lecture 

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    Event date: 2015.11

    Language:English   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:Korea Maritime and Ocean University   Country:Korea, Republic of  

    Development of InGaN-based blue LEDs

  173. 紫外線LEDの開発と医療応用 Invited

    天野 浩

    日本皮膚科学会中部支部学術大会 

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    Event date: 2015.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:神戸国際会議場   Country:Japan  

    1.青色LED開発

    2.紫外線LEDによる皮膚病治療器開発

    3.深紫外線LED開発

  174. 世界を照らすLED Invited

    天野 浩

    静岡県立浜名高等学校 特別講演会 

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    Event date: 2015.10

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:静岡県立浜名高等学校   Country:Japan  

    *若い人々は、何故頑張るべきなのか?       
    *これから何をすべきかを考えるヒント

  175. 青色LEDに見る未来へのヒント Invited

    天野 浩

    第4回富士通研究所大会 

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    Event date: 2015.10

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:パシフィコ横浜   Country:Japan  

    研究者は何を目指すべきか?

  176. Challenges for energy savings and energy harvesting by new materials Invited International conference

    Hiroshi Amano

    Tsukuba GIANT High Level Forum 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:University Hall, University of Tsukuba, Japan   Country:Japan  

    Understandg growth of GaN and related materials

  177. Group III nitride semiconductors as future key materials for energy savings and energy harvesting Invited International conference

    Hiroshi Amano

    ALC'15 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kunibiki Messe, Matsue City   Country:Japan  

    Atomic-Level In-Situ InGaN Growth Process Monitoring for Nitride-Based Visible Long Wavelength Light Emitting Device Fabrication

  178. 世界を照らすLED Invited

    天野 浩

    旧制諏訪中学・諏訪清陵高等学校創立120周年記念講演会 

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    Event date: 2015.10

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:長野県立諏訪清陵高等学校   Country:Japan  

    *若い人々は、何故頑張るべきなのか?       
    *これから何をすべきかを考えるヒント

  179. 世界を照らすLED Invited

    天野 浩

    第11回名古屋大学ホームカミングデイ 持続可能社会の実現に向けて 

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    Event date: 2015.10

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:豊田講堂ホール   Country:Japan  

    持続可能社会を、どのように構築するか?

  180. 世界を照らすLED Invited

    天野 浩

    愛知県小坂井高等学校 40周年記念式典・記念講演会 

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    Event date: 2015.10

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:愛知県小坂井高等学校   Country:Japan  

    *若い人々は、何故頑張るべきなのか?      
    *夢中になった青色LED 
    *夢中になるための、考えるヒント

  181. 青色LEDと新産業創成 Invited

    天野 浩

    SIPシンポジウム2015 

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    Event date: 2015.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:EVENT SPACE EBiS 303イベントホール(エビススバルビル)   Country:Japan  

    青色LED研究を通して得た教訓

  182. 世界を照らすLED

    天野 浩

    青山学院大学理工学部創立50周年記念事業 

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    Event date: 2015.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:青山学院大学相模原キャンパス ウェスレー・チャペル   Country:Japan  

    *若い人々に、どれくらい大きな期待がかかっているか?      
    *夢中になった青色LED 
    *夢中になるための考えるヒント

  183. LED Lighting for Energy Savings and Future Prospects of LED Applications Invited International conference

    Hiroshi Amano

    2015 IEEE Photonics Conference, 28th Annual Conference of the IEEE Photonics Society  

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Hyatt Regency Reston, Reston, Virginia USA   Country:United States  

    InGaN blue LEDs
    AlGaN DUV LEDs

  184. 世界を変える力 Invited

    天野 浩

    浜松市立高等学校講演会 

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    Event date: 2015.10

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:浜松市立高等学校   Country:Japan  

    夢中になる(努力できる)時期

  185. Lighting the Earth by LEDs International conference

    Hiroshi Amano

    GLOBE Asia Pacific Regional Forum 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Tokyo, Japan   Country:Japan  

    COllaboration with academia and private company

  186. Beyond blue LEDs International conference

    Hiroshi Amano

    SSDM2015 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Sapporo Convention Center   Country:Japan  

    DUV LEDs for water purification

    InGaN/GaN MQW coreshell nanorods by pulsed mode MOVPE for full color LEDs and LDs

    Ultralong GaN nanowire by catalyst assisted HVPE for mm wave transistors

  187. Prospects of the nitride based devices for future electronics Invited International conference

    Hiroshi Amano

    Linköping University Special Lecture 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Linköping University   Country:Sweden  

    Development of blue LED

  188. Lighting the Earth by LEDs Invited International conference

    Hiroshi Amano

    LiU 40 to be celebrated all year 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Linköping University   Country:Sweden  

    Personal history as the researchers

  189. 窒化物半導体レーザ開発の歴史と今後の展開 Invited

    天野 浩

    第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋国際会議場   Country:Japan  

    *GaN創成期
    *窒化物LDが生まれるまで
       ZnCdSeの状況
       名城大学での研究
       日亜化学による世界初のLD
    *ビジネスの難しさ
    *窒化物LDの新しい応用の可能性

  190. 濱口道成先生にお世話になったこと Invited

    天野 浩

    濱口道成退官記念 

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    Event date: 2015.9

    Language:Japanese  

    Venue:名古屋観光ホテル    Country:Japan  

    濱口道成先生に対するお礼

  191. 真空技術とLED開発の歴史および未来の照明について Invited

    天野 浩

    日本真空工業会創立30周年記念 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:パシフィコ横浜 展示ホール内 講演会場   Country:Japan  

    青色LEDは、如何にして生まれ育ったか?

  192. 世界を照らすLED Invited

    天野 浩

    名古屋大学レクシャー 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学豊田講堂   Country:Japan  

    *若い人々は、何故頑張るべきなのか?      
    *夢中になった青色LED 
    *夢中になるための、考えるヒント

  193. 紫外線LEDの開発と医療応用 Invited

    天野 浩

    日本乾癬学会学術大会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ウェスティンナゴヤキャッスル   Country:Japan  

    1.青色LED開発

    2.紫外線LEDによる皮膚病治療器開発

    3.深紫外線LED開発 

  194. Development of GaN-Based Devices and Future Prospects Invited International conference

    Hiroshi Amano

    The 14th Centennial Physics Lecture at Peking University 

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    Event date: 2015.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue: Peking University   Country:China  

    In this presentation, I would like to introduce you our laboratory at Nagoya University.

    Target of our laboratory is to contribute to the mankind by solving the global issues.

    So, staff of our laboratory members and students are devoting themselves to realize bright future.

    Today, I will show you how students especially from China enjoy research life at Nagoya by actively pursuing each final goal.

    Also, I will explain the history of the development of blue LEDs, emphasizing how many people contributed to the blue LEDs.

  195. Lighting the Earth by LEDs Invited International conference

    Hiroshi Amano

    ICNS-11 

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    Event date: 2015.8 - 2015.9

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Beijing International Convention Center, China   Country:China  

    Development of InGaN-based blue LEDs

  196. 新しいエレクトロニクスによる省・創エネルギーへの貢献 Invited

    天野 浩

    電気学会 電力・エネルギー部門大会 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名城大学 名城ホール   Country:Japan  

    *青色LEDが社会実装されるまでの長い道のり
    *青色LEDは、どの程度省エネに貢献できるか?
    *世界規模の問題に対する新システム開発の提案

  197. Present and future prospects of nitride-based light emitting devices Invited International conference

    Hiroshi Amano

    CLEO -PR2015 

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    Event date: 2015.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Summit Hall, BEXCO, Busan, Korea   Country:Korea, Republic of  

    Development of InGaN-based blue LEDs

  198. Challenge for short and long wavelength solid state light emitting devices Invited International conference

    Hiroshi Amano, Tetsuya Yamamoto, Akira Tamura, Maki Kushimoto, Byung-Oh Jung, Si-Young Bae, Kaddour Lekhal, Tadashi Mitsunari, Manato Deki, and Yoshio Honda

    WUPP for Wide Band Gap Semiconductors, 2015  

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    Event date: 2015.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Hilton Fukuoka Sea Hawk, Fukuoka, Japan   Country:Japan  

    Contribution of InGaN LEDs for energy savings
    DUV LEDs

    InGaN/GaN MQW coreshell nanorods by pulsed mode MOVPE

    Ultralong GaN nanowire by catalyst assisted HVPE

  199. 次世代を築くみなさんへ Invited

    天野 浩

    KEKサマーチャレンジ 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:高エネルギー加速器研究機構つくばキャンパス   Country:Japan  

    若い人へのメッセージ

  200. ノーベルウィークにまつわる話

    天野 浩

    二葉会同窓会 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:IB電子情報館北棟5階 電気系会議室   Country:Japan  

    ノーベルウィークにまつわる話

  201. 人生のスイッチをオンするタイミング Invited

    天野 浩

    スルガ奨学財団サマーガイダンス講演会 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:スルガ銀行キャンパス・カレッジ 駿河小山講堂   Country:Japan  

    未来を拓く担い手は、皆さんのような若い人たちです。

    この話は、今後、人生の転機を迎えるであろう皆さんへのエールのつもりです。

  202. 未来を作る君たちへ Invited

    天野 浩

    あすなろ夢講座21 有徳の人づくり講演会 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:コンベンションアーツセンター「グランシップ」 中ホール   Country:Japan  

    本日は、静岡県の未来について考えたいと思います。

    これから10年後、20年後の新しい静岡のヒントを探るうえでヒントになるかもしれない、と言う思いから、最近訪れたさまざまな国を訪問して感じたことを紹介します。

    皆さんとは直接関係することでは無いかもしれませんが、一緒に考えてください。

  203. 浜松の思い出とストックホルムでの出来事

    天野 浩

    寶書展 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ホテルクラウンパレス浜松   Country:Japan  

    浜松の思い出
    ノーベルウィーク

  204. 君は、いつ自分の人生のスイッチをオンしますか Invited

    天野 浩

    名古屋大学オープンキャンパス模擬講義 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:IB電子情報館大講義室   Country:Japan  

    いつやる気を出すべきか?

  205. Lighting the Earth by LEDs Invited

    Hiroshi Amano

    Sakura exchange program in science 

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    Event date: 2015.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Toyama High School, Tokyo   Country:Japan  

    What's happne if you become Nobel Laureate.
    Development of blue LED

  206. 青色LEDと新産業創成 Invited

    天野 浩

    中部経済同友会創立60周年記念行事 「ひろがる交流の和、中部から世界へ」 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ウェスティンナゴヤキャッスル   Country:Japan  

    青色LEDは、如何にして生まれ育ったか?

  207. 学生~助手の頃を振り返って Invited

    天野 浩

    大阪青年会議所65周年祝賀会 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:大阪   Country:Japan  

    これまでの研究者生活を振り返って

  208. イノベーション創出の要諦 Invited

    天野 浩、鈴木 寛、森 勇介

    大阪青年会議所65周年記念 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Symposium, workshop panel (nominated)  

    Venue:大阪   Country:Japan  

    イノベーション創出の要諦

  209. Progress in III-Nitrides Nanophotonics Invited International conference

    Hiroshi Amano

    iNOW2015 

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    Event date: 2015.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

    * Comfortable life
    Broadband Communications by LD on Si
    * Sustainable society
    Energy savings by LEDs and Power Tr.
    Energy harvesting by photovoltaic cells
    Water purification by DUV LEDs

    Plant Factory by LEDs
    Optogenetics by LEDs

  210. 世界を照らすLED Invited

    天野 浩

    グローバル化社会の学校教育 Ⅱ  -これからの社会に求められる資質・能力- 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:アルカディア市ヶ谷(私学会館)   Country:Japan  

    本日は、
    グローバル化社会の学校教育 Ⅱ 
    -これからの社会に求められる資質・能力-

    について、青色LEDの研究を通して感じたことなどを
    もとに、特に教育に関係することについて紹介します。

  211. 夢中になれることから始めよう Invited

    天野 浩

    プラチナ未来人財育成塾 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:柏の葉カンファレンスセンター   Country:Japan  

    人生論

  212. Progress of GaN LEDs Invited International conference

    Hiroshi Amano

    EP2DS-21/MSS-17 

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    Event date: 2015.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Sendai International Center   Country:Japan  

    History of blue LED

  213. 青色LED ノーベル物理学賞への軌跡 Invited

    天野 浩

    西日本生産性会議2015 

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    Event date: 2015.7

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:ウェスティンナゴヤキャッスル   Country:Japan  

    本日は、どのようにして青色LEDが名古屋大学から生まれたか、について紹介させていただきます。

  214. 新しいエレクトロニクスが開く未来 Invited

    天野 浩

    塩谷立君と明日の日本を語る会 二十一世紀浜松の会 

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    Event date: 2015.7

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:ホテルクラウンパレス   Country:Japan  

     最近訪れたさまざまな国を訪問して感じたことなどから、これから10年後、20年後の浜松のヒントを探ります。

  215. 世界を灯すLED Invited

    天野 浩

    岡崎あかりプロジェクト 

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    Event date: 2015.7

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:岡崎市図書館交流プラザ(康生通西4丁目) 1Fりぶらホール   Country:Japan  

    滅多に出来ない貴重な体験をさせて
    頂いたので、青色LEDの説明の前に、
    受賞するとどうなるか、
    数々の行事などを紹介させて頂きます。

  216. 名古屋大学における青色LED研究の歴史 Invited

    天野 浩

    名古屋大学学術研究 産学官連携推進本部 講演会 

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    Event date: 2015.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学ES総合館ESホール   Country:Japan  

    *青色LEDの“種”はどこで生まれ、どのように育ったか? 

    *何故、青色LEDは難しかったのか?

    *何故、自分は青色LEDに惹かれたか?

    *名大での青色LED研究

    *未来社会創成の取り組み

  217. GaN-Based Devices for Future Electronics Invited International conference

    Hiroshi Amano, Tetsuya Yamamoto, Akira Tamura, Seunga Lee, Zheng Sun, Maki Kushimoto, Byung-Oh Jung, Si-Young Bae, Kaddour Lekhal, Tadashi Mitsunari, Manato Deki, and Yoshio Honda

    GJS-2015 

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    Event date: 2015.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kyoto University   Country:Japan  

    Contribution of InGaN LEDs for energy savings
    DUV LEDs
    long-wavelength light emitters by high-In-content InGaN
    GaN on Si
    GaN naowires and nanorods

  218. 未来に賭けるタイミング Invited

    天野 浩

    TEDx NagoyaU 

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    Event date: 2015.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ES Hall, Nagoya University   Country:Japan  

    未来を拓くための担い手は、皆さんのような若い人たちです。
    この話は、今後、人生の転機を迎えるであろう皆さんへのエールのつもりです。

  219. 未来へのメッセージ Invited

    天野 浩

    浜松市市制施工104周年記念式典 合併10周年記念事業 

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    Event date: 2015.7

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:浜松市   Country:Japan  

    1.高校まで・・・多くの友人、親戚 
    2.大学に入ってから・・・産業の街  
    3.青色LEDにかかわってから・・・ 

  220. Development and future applications of GaN-based LEDs Invited International conference

    Hiroshi Amano, T. Yamamoto. A. Tamura, Y. Honda

    23rd International Symposium on Nanostructures Physics and Technology  

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    Event date: 2015.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:St. Petersburg, Russia   Country:Russian Federation  

    Thermodynamic analysis for MOVPE growth of InGaN and AlGaN

  221. Development of GaN based devices and future prospects International conference

    Hiroshi Amano

    44th Jaszowiec International School and Conference on the Physics of Semiconductors 

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    Event date: 2015.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Wisła, Poland   Country:Poland  

    In this presentation, I would like to explain how the seed of blue light emitting diodes, that is Nitride Semiconductors, have been developed and handed over by many researchers.
    I also would like to show that thermodynamic analysis is essential for understanding the MOVPE growth mechanism of AlGaN and InGaN.

  222. Revolution of Display and Lighting by LEDs Invited International conference

    Hiroshi Amano

    1st ICAI 

     More details

    Event date: 2015.6

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Hitotsubashi Hall (2F), National Center of Science (Hitotsubashi Memorial Hall)   Country:Japan  

    History of the development of blue LED

  223. これからの産業と大学の役割 Invited

    天野 浩

    第20回名古屋大学遠州会同窓会 

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    Event date: 2015.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:静岡文化芸術大学講堂   Country:Japan  

    次の産業をどのように創成するか 青色LEDの例 
    シーズ創成とボトムアップ型産業形成

  224. Junction Technology in GaN LEDs International conference

    Hiroshi Amano

    15th International Workshop on Junction Technology 2015 

     More details

    Event date: 2015.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kyoto University Kihada Hall (Uji Campus), Kyoto, Japan   Country:Japan  

    Short history of blue LED development

  225. 世界を照らすLED Invited

    天野 浩

    浜田亀山ライオンズクラブ認証40周年記念 

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    Event date: 2015.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:石央文化ホール(大ホール)   Country:Japan  

    *ノーベルウィークは毎日行事。
    *ストックホルム市民が、国を上げて盛り上げてくれる。
    *期間中に地元のTV放送があるので、街に行くと、街の人々も祝って
    くれる。
    *スチューデントユニオンを中心とした学生の活動も活発。学生組織
    の国民的行事への積極的な参加は、日本でも検討すべき!
    *国王、お妃、王女それぞれ大変気さくで、かつ勉強家。スウェーデン
    の状況をいろいろとお話しいただいた。
    *欧米の受賞者は皆さんタフ。18日まで各所で講演。

  226. History of the development of GaN-based blue LEDs and future prospects Invited International conference

    Hiroshi Amano

    Monday, June 1, 2015 Saint Petersburg State University Special Lecture 

     More details

    Event date: 2015.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Saint Petersburg State University   Country:Japan  

    In this presentation, I would like to explain how the seed of blue light emitting diode, that is Nitride Semiconductors, have been developed and handed over by many researchers. I also would like to show some perspective of the new development and applications of nitride-based light emitting devices.

  227. 皆さんは、いつ自分の人生のスイッチをオンしますか Invited

    天野 浩

    ノーベル賞受賞者を囲むフォーラム「次世代へのメッセージ」 

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    Event date: 2015.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:郡山市立中央公民館(福島県郡山市麓山)   Country:Japan  

    未来を拓くための担い手は、皆さんのような若い人たちです。
    この話は、今後、人生の転機を迎えるであろう皆さんへのエールのつもりです。

  228. ワイドバンドギャップ半導体による 電力消費低減 Invited

    天野 浩

    電気設備学会中部支部総会 

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    Event date: 2015.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋ガーデンパレス   Country:Japan  

    1.ワイドバンドギャップ(WBG)半導体とは何か?
    SiCやGaNは、Siと何が違うのか? 
    半導体講義のおさらい
    2.LEDについて 
    3.電力用パワーデバイスについて 

  229. LEDが照らす明るい未来 Invited

    天野 浩

    関西経済連合会 

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    Event date: 2015.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:リーガロイヤルホテル   Country:Japan  

    青色LED開発の歴史

  230. 世界を照らすLED Invited

    天野 浩

    日本表面科学会 

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    Event date: 2015.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:学習院大学 学習院創立百周年記念会館正堂   Country:Japan  

    結晶表面制御技術が、如何に青色LEDの実用化に貢献したか。

  231. Lighting the Earth with LEDs, -Past, Present and Future Prospects of GaN-Based Blue LEDs- Invited International conference

    Hiroshi Amano

    CS Mantech 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Hyatt Regency Scottsdale Resort and Spa at GaineyScottsdale, Arizona, USA   Country:United States  

    In this presentation, I would like to explain how the seed of blue light emitting diode, that is Nitride Semiconductors, have been developed and handed over by many researchers.

    I also would like to show some perspective of the new development and applications of nitride-based light emitting devices.

  232. Current and Future of Solid State Lighting International conference

    Hiroshi Amano

    CLEO2015 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

    Crystal growth of GaN and pn junction LED

  233. 大学の研究室から生まれた青色LED

    天野 浩

    二葉会総会 

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    Event date: 2015.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:IB電子情報館東棟2階 大講義室   Country:Japan  

    大学での研究予算

  234. 未来エレクトロニクスによる地球規模問題解決への挑戦

    天野 浩

    名城大学ノーベル賞受賞記念講演会 

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    Event date: 2015.4

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:名城大学共通講義棟北名城ホール   Country:Japan  

    LED パワーデバイスによる省エネ

  235. GaN研究コンソーシアム(仮称)の目指すもの 新世代エレクトロニクスによる省エネ貢献の加速と 持続可能社会の実現の可能性

    天野 浩

    GaN研究コンソーシアム 

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    Event date: 2015.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学   Country:Japan  

    GaN研究コンソーシアム設立にあたって

  236. Illuminating the World by LEDs International conference

    Hiroshi Amano

    OPIC 

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    Event date: 2015.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

    Development of blue LED

  237. 世界を照らす青色LED

    天野 浩

    国際光年記念シンポジウム 

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    Event date: 2015.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京大学安田講堂   Country:Japan  

    ノーベルウィークの話と青色LED開発の歴史

  238. 地球規模問題解決へのチャレンジ

    天野 浩

    ノーベル物理学賞レクチャー 

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    Event date: 2015.4

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:東京医科歯科大学 鈴木章夫記念講堂   Country:Japan  

    窒化物を用いたグローバルイシュー解決への貢献

  239. LEDが照らす日本と世界の明るい未来

    天野 浩

    日本商工会議所昼食懇談会 

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    Event date: 2015.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:JPタワーホール&カンファレンス   Country:Japan  

    青色LEDの開発と省エネ効果

  240. 青色LEDはどのように実用化されたか?

    天野 浩

    CATV×KDDIパートナーズコンベンション2015 

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    Event date: 2015.4

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:ANAインターコンティネンタル東京   Country:Japan  

    青色LEDはどのように開発されたか

  241. 世界を照らすLED Invited

    天野 浩

    学生向け講演会「天野先生特別講演会」 

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    Event date: 2015.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京工科大学 八王子キャンパス 片柳研究棟地下1Fホール   Country:Japan  

  242. If you become a Nobel Laureate International conference

    Hiroshi Amano

    Talk concert  

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    Event date: 2015.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

    What's happen if you become a nobel leureate.

  243. Invention of LED and Future International conference

    Hiroshi Amano

    Pukyong National University and Korea Maritime and Ocean University Symposium 

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    Event date: 2015.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

    How LED was developed.

  244. 研究の継続性とイノベーション

    天野 浩

    日本学術会議講演会 

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    Event date: 2015.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:日本学術会議講堂 東京都港区六本木7-22-34   Country:Japan  

    イノベーションはどのようにして起こるのか

  245. 青色LEDが変えた社会

    天野 浩

    名古屋大学先端ナノバイオデバイス研究センター講演会 

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    Event date: 2015.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学ES総合館1階ESホール   Country:Japan  

    イノベーションは、どのように起こるか

  246. Beyond Blue LED International conference

    Hiroshi Amano

    ISPlasma2015/IC-PLANTS2015 

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    Event date: 2015.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

    Development of blueLED by plasma assisted MBE

  247. LEDの現状と次世代LEDの開発に向けて

    天野 浩

    Electronic Journal 第2833回 Technical Seminar 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:連合会館(東京・御茶ノ水)   Country:Japan  

    LEDの原理 成長 評価方法 応用

  248. 青色LEDの物理と今後の展開

    天野 浩

    日本物理学会 第70回年次大会(2015年)  

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:早稲田大学 早稲田キャンパス   Country:Japan  

    青色LED開発の歴史と今後の研究の方向性

  249. 未来の受賞者への伝言

    天野 浩

    科学の甲子園 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:つくば国際会議場 1階 大ホール   Country:Japan  

    ノーベルウィークの出来事

  250. Illuminating the World by LEDs International conference

    Hiroshi Amano

    Aalto University Seminar 

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    Event date: 2015.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Finland  

    Development of blue LED

  251. 新世代エレクトロニクスによる省エネ貢献の加速と 持続可能社会の実現の可能性

    天野 浩

    SIRIJ 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:富国生命ビル23F  SIRIJ   Country:Japan  

    LEDを含めた省エネルギー技術の紹介

  252. 未来を築く皆さんへ

    天野 浩

    静岡県立浜松西高等学校・中等部 特別講演 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:静岡県立浜松西高等学校・中等部   Country:Japan  

    小学生から助手まで

  253. 応用物理学会活動への期待

    天野 浩

    応用物理学会  

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東海大学 湘南キャンパス2号館大ホール   Country:Japan  

    応用物理学会のこれまでの活動と今後への期待

  254. 青色LED 開発と今後のエレクトロニクス

    天野 浩

    電子情報通信学会特別講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:立命館大学びわこ・くさつキャンパス プリズムホール   Country:Japan  

    ノーベルウィークの概要

  255. 自由民主党党大会・スピーチ

    天野 浩

    自由民主党党大会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:グランドプリンスホテル新高輪   Country:Japan  

    これからの科学技術予算と大学の取り組み

  256. 世界を照らすLED とこれからの産業について

    天野 浩

    プレスタワー30周年記念特別講演会 

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    Event date: 2015.3

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:浜松プレスタワー   Country:Japan  

    これからの浜松の産業

  257. 次に受賞する人へのメッセージ

    天野 浩

    京都工芸繊維大学講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:京都工芸繊維大学 センターホール   Country:Japan  

    研究にどのようにたち向かうべきか

  258. LEDの可能性と照明の未来

    天野 浩

    ライティングフェア 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:東京ビックサイト会議棟 国際会議場   Country:Japan  

    LED照明の歴史

  259. Lighting the Earth by LEDs - LEDs for Medical Applications - International conference

    Hiroshi Amano

    Nobel Prize Dialogue 

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    Event date: 2015.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

    Application of DUV LED for Dermatology

  260. 21世紀を照らすLED  ー次世代産業創成のヒントを探るー

    天野 浩

    中日懇話会  

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    Event date: 2015.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ヒルトン名古屋 5階「扇の間」   Country:Japan  

    ノーベルウィークの出来事と青色LED

  261. Lighting the Earth by LEDs International conference

    Hiroshi Amano

    Sungkyunkwan University 

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    Event date: 2015.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

    Development of blue LED

  262. Energy Savingを支えるGaN光デバイス

    天野 浩

    JPC関西 

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    Event date: 2015.2

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:大阪新阪急ホテル2F 花   Country:Japan  

    青色LEDによる省エネ効果

  263. 新世代エレクトロニクスによる省エネ貢献の加速と 持続可能社会の実現の可能性

    天野 浩

    自民党 原子力政策・需給問題等調査会 

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    Event date: 2015.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:自民党 原子力政策・需給問題等調査会   Country:Japan  

    LED パワーデバイスによる省エネ効果

  264. 名古屋大学から生まれた青色LED大学院博士前期課程時代から助手 現代に至るまで

    天野 浩

    第8回防災・環境シンポジウム 

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    Event date: 2015.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:法文学部新棟 2階215教室   Country:Japan  

    大学院博士前期課程時代から助手 現代に至るまで

  265. 若い頃の夢と青色LED 小学生から学生時代まで

    天野 浩

    琉大ドリームチーム特別講演会 

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    Event date: 2015.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:浦添市てだこホール 大ホール   Country:Japan  

    小学生から学生時代の過ごし方

  266. イノベーション創出に向けたNEDOへの期待

    天野 浩

    NEDO FORUM  

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    Event date: 2015.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京国際フォーラム ホールB5・B7   Country:Japan  

    NEDOによる研究支援

  267. 青色LED開発の歴史と展望

    天野 浩

    参議院協会 

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    Event date: 2015.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:参議院   Country:Japan  

    青色LED開発の歴史

  268. 世界を照らすLED にまつわる 知的財産の話

    天野 浩

    中部知財フォーラム2014 

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    Event date: 2015.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:キャッスルプラザ   Country:Japan  

    青色LEDの特許関連の話題

  269. The Blue Light-Emitting Diode (LED): A New Light to Illuminate the World International conference

    Hiroshi Amao

    Nagoya University Day in Bangkok 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Thailand  

    Development of blue LED

  270. 青色LED誕生までの道のり  若者へのメッセージ

    天野 浩

    山口大学創基200年記念講演会 

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    Event date: 2015.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:山口大学常盤キャンパス D講義棟11教室   Country:Japan  

    青色LED誕生ストーリー

  271. Nitride Semiconductors; From Blue LEDs to Solar Cells International conference

    Seunga Lee, Si-Young Bae, Motoaki Iwaya, Yoshio Honda, and Hiroshi Amano

    7th International Symposium on Innovative Solar Cells 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Japan  

    Solar cells based on InGaN

  272. LED産業の今後の可能性

    天野 浩

    フォーリンプレスセンター 

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    Event date: 2015.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:公益財団法人フォーリンプレスセンター   Country:Japan  

    照明用LED市場及び深紫外LED市場

  273. LEDが照らす日本と世界の明るい未来

    天野 浩

    公益社団法人 日本技術士会 

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    Event date: 2015.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:日本教育会館 一ツ橋ホール   Country:Japan  

    ノーベルウィーク報告および青色LED開発の歴史

  274. 次の受賞者のために 10月7日から12月23日までの出来事

    天野 浩

    名古屋大学博士課程リーディングプログラム グリーン自然科学国際教育研究プログラム 

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    Event date: 2015.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:坂田・平田ホール   Country:Japan  

    ノーベルウィークの報告

  275. 日本の省エネ・環境技術が世界を先導するために

    天野 浩

    環境省若手フォーラム 

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    Event date: 2015.1

    Language:Japanese  

    Venue:環境省   Country:Japan  

    GaN系パワーデバイスによる省エネ化の貢献

  276. 日本の省エネ・環境技術が 世界を先導するために

    天野 浩

    環境省若手セミナー 

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    Event date: 2015.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:環境省   Country:Japan  

    環境省の若手に対して、パワーデバイス開発の重要性を説明する。

  277. GaNを用いた新しいエレクトロニクスと省・創エネルギーへの貢献

    天野 浩

    第8回 日中省エネルギー・環境総合フォーラム 

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:北京   Country:Japan  

     GaNの青色LEDとパワーデバイスによって、どれくらい省エネ効果があるかを説明した。

  278. 明るく省エネ効果抜群の白色LED光源を可能にした高効率な青色LED

    天野 浩

    東北大学多元物質科学研究所・東北大学知の創出センター 光のページェント 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:仙台市民会館大ホール   Country:Japan  

    GaNの青色LEDが開発されたことによって、世にどのような貢献をしたか、を紹介した。

  279. Effect of Pressure Increase on the Growth of High-In-Content InGaN by MOVPE International conference

    A. Tamura, T. Yamamoto, K. Yamashita, T. Mitsunari, Y. Honda H. Amano

    ISSLED2014 

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  280. History of the development of blue LEDs and their impact on the future human society International conference

    Hiroshi Amano

    National Taiwan University Seminar 

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Taiwan, Province of China  

  281. History of the development of GaN LED and their future prospects International conference

    Hiroshi Amano

    Lund University Nobel Seminar 

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  282. Development of blue LEDs and their future prospects International conference

    Hiroshi Amano

    Uppsala University Nobel Seminar 

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  283. Growth of GaN on sapphire by low-temperature deposition of buffer layer and realization of p-type GaN by Mg-doping followed by LEEBI treatment International conference

    Hiroshi Amano

    Nobel Lecture 

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Sweden  

  284. Fundamental Physics of Nitride-Based Optoelectronic Devices International conference

    Hiroshi Amano

    MRS Fall Meeting 

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    Event date: 2014.11

    Language:English  

    Country:United States  

  285. 新世代パワーエレクトロニクス

    天野 浩

    NEDO パワーエレクトロニクスシンポジウム 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:品川プリンスホテル   Country:Japan  

    SIPを中心とした、GaN系パワーデバイスプロジェクトの概要、およびその目標について紹介した。

  286. GaN系パワー半導体の結晶成長とプロセスの基礎

    石井貴大、叶 正、孫 政、呂 迪、出来真斗、本田善央、天野 浩

    先進パワー半導体分科会 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ウィンク愛知    Country:Japan  

    GaNを用いたパワーデバイス作製のための結晶成長技術とプロセス技術の現状を紹介した。

  287. ナイトライドナノワイヤによる新しいエレクトロニクスデバイス

    天野 浩

    平成26年度VBL先端理工学特論 

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    Event date: 2014.11

    Language:Japanese  

    Venue:名古屋大学VBL   Country:Japan  

    GaNのナノロッド及びナノワイヤについて、その製造方法及び従来の構造に対するデバイス応用時の優位性について紹介した。

  288. Atomic-Level In-Situ InGaN Growth Process Monitoring for Nitride-Based Visible Long Wavelength Light Emitting Device Fabrication International conference

    H. Amano,G. Ju, A. Tamura, K. Yamashita, T. Mitsunari, Y. Honda, M. Tabuchi, Y. Takeda, S Fuchi

    THU-CAS-JSPS Joint Symposium  

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  289. Development of blue LEDs and their future prospects International conference

    Hiroshi Amano

    Tsinghua Global Vision Lectures 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  290. GaN系パワー半導体の技術の現状と将来展望

    叶 正、石井貴大、孫 政、呂 迪、本田善央、天野 浩

    次世代パワーエレクトロニクス研究会 

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    Event date: 2014.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:広島YMCA国際文化センター   Country:Japan  

    名大でのGaN系パワーデバイス研究の現状を紹介した。

  291. GaN光デバイス(基礎) GaN光デバイス(結晶成長とデバイス)

    天野 浩

    日本学術振興会第162 委員会 第8回ワイドバンドギャップ半導体スクール 

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    Event date: 2014.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:浜名湖ロイヤルホテル   Country:Japan  

    GaNのを用いたLEDLD 太陽電池などのデバイスの動作原理の基礎を学生、若手研究者向けに説明した。

  292. 大学人が考える科学・技術イノベーション―ノーベル物理学賞受賞研究を通じて―

    天野 浩

    自民党参・政策審議会 

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    Event date: 2014.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:自民党本部   Country:Japan  

    名大での1980年代前半の青色LED開発の状況、特に研究開発費の状況を
    説明した。

  293. 窒化物半導体光デバイス

    天野 浩

    ふくい成長産業創造フォーラム 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:福井県若狭湾エネルギー研究センター ホール   Country:Japan  

    GaN系青色LEDの開発の歴史及び今後の展望

  294. X線反射、CTR散乱及びレーザ吸収散乱法を用いた窒化物半導体結晶成長の原子レベルその場観察 

    田村 彰、山下康平、光成 正、鞠 光旭、本田善央、田渕 雅夫、竹田 美和、渕 真悟、天野 浩

    平 成 26 年 度 文部科学省ナノテクノロジープラットフォーム事業 微細構造解析プラットフォーム放射光利用研究セミナー 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:大阪大学大学院基礎工学研究科   Country:Japan  

    X線CTR、X線反射及び多波長レーザを用いたInGaNのMOVPE成長その場観察

  295. Ultraprecision surface monitoring during growth of InGaN on GaN International conference

    H. Amano,G. Ju, A. Tamura, K. Yamashita, T. Mitsunari, Y. Honda

    WUPP for Wide-bandgap Semiconductors 2014 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United Kingdom  

  296. Pressurized MOVPE of high-In-content InGaN International conference

    Akira Tamura, Kouhei Yamashita, Tadashi Mitsunari, Yoshio Honda and Hiroshi Amano

    ICMOVPE 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  297. パワーデバイス実用化のためのGaN系結晶成長・関連技術の理解

    杉山貴之、石井貴大、孫 政、呂 迪、本田善央、天野 浩

    応用電子物性分科会研究例会 

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    Event date: 2014.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学   Country:Japan  

    GaN基板上GaNパワーデバイス開発の現状

  298. Recent Development of Atomic-Level in Situ Growth Monitoring Tools for the Fabrication of Nitride-Based Light Emitting Devices International conference

    H. Amano, G. Ju, A. Tamura, S. Usami, K. Yamashita, T. Mitsunari,Y. Honda, M. Tabuchi, Y. Takeda, S, Fuchi

    The 5th International Conference on White LEDs and Solid State Lighting 

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  299. Conference on LED and its industrial application '14 International conference

    Hiroshi AMANO

    Optics&Photonics International Congress 2014 

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    Event date: 2014.4

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Japan  

  300. Two types of buffer layer for the growth of GaN on highly lattice mismatched substrates and their impact on the development of sustainable systems International conference

    Tadashi Mitsunari, Koji Okuno, Yoshio Honda, and Hiroshi Amano

    DPG Dresden14 

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    Event date: 2014.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Germany  

  301. 環境貢献と経済発展の両立・・・進化を続けるLED技術

    天野 浩

    日本フォトニクス協議会関西支部設立記念講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:大阪商工会議所   Country:Japan  

    LEDの研究の歴史と現状の紹介

  302. 窒化物半導体結晶成長の表面反応制御と三次元構造デバイス

    天野 浩

    第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

    GaNナノワイヤ研究の現状の紹介

  303. 窒化物半導体による生活の変革

    天野 浩

    CREST 太陽光を利用した独創的クリーンエネルギー生成技術の創成 第2回研究シンポジウム 

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    Event date: 2014.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:豊田工業大学   Country:Japan  

    InGaN系太陽電池の現状紹介

  304. 名古屋大学赤﨑記念館の概要と名古屋大学におけるLED研究の取り組み

    天野 浩

    産業用LED応用研究会 2013年12月見学・定例会 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

    名古屋大学赤﨑記念館の概要と名古屋大学におけるLED研究の取り組みの紹介

  305. Research activity at Nagoya University Akasaki Research Center

    Hiroshi AMANO

    2013 Meijo International Symposium on Nitride Semiconductors (MSN 2013) 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  306. 窒化物半導体デバイス開発におけるモデリングの重要性

    天野 浩

    応用物理学会名古屋大学スチューデントチャプター(SC) 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学   Country:Japan  

  307. 化合物半導体系太陽光発電素子の現状と窒化物太陽光発電素子の可能性

    李 昇我、本田善央、山口雅史、天野 浩、岩谷素顕

    第5回薄膜太陽電池セミナー 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学   Country:Japan  

  308. Plasma technology as the candidate for the source of next generation LED lighting International conference

    Hiroshi Amano

    The GRDC symposium 

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    Event date: 2013.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

    By PA-MBE using HDRS, growth rate of InGaN as high as 1.6 microns/hr and threading dislocation density as low as 4E9cm-2 were realized.
    Degradation of mosaicity of InGaN grains with increasing InN composition was successfully suppressed.
    With increasing III/V ratio, surface roughness and mosaicity of InGaN were drastically improved.
    Fine PL spectrum was obtained for InGaN grown with III/V ratio of 1.46.

  309. GaN発光デバイス

    天野 浩

    日本学術振興会第162 委員会 第7回ワイドバンドギャップ半導体スクール 

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    Event date: 2013.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:奈良   Country:Japan  

    1.光源としてのLEDの特徴・省エネ貢献・LED市場動向
    2.発光の物理
    3.GaN系半導体の特徴
    4.GaN系LEDの作製法
    5.LEDの物理
    6.最近の話題

  310. Are we approaching the limit of the current technology?  What's next? International conference

    Hiroshi Amano

    LED Japan Strategies in Light 

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    Event date: 2013.10

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Japan  

    Realizing ultimate light source
    Developing low cost process technology

  311. LED照明の現状と今後の展望

    天野 浩

    ファインセラミックシンポジウム2013 

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    Event date: 2013.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋   Country:Japan  

    1.LEDの特徴と市場動向 
    2.LEDの現状と問題点   
    3.問題点に対する取り組み・・・未来光源としてのLED開発

  312. Nitride-based devices on Na-flux-grown GaN substrate International conference

    Tadashi Mitsunari, Kouhei Yamashita, Guangxu Ju,Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano Mamoru Imade and Yusuke Mori

    IWBNS-VIII2013 

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    Event date: 2013.9 - 2013.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Germany  

    In-situ monitoring system during MOVPE
    LEDs on Na flux GaN substrates
    HFETs on Na flux GaN substrates

  313. 可視光および X 線を用いた窒化物半導体結晶成長原子レベルその場観察

    鞠 光旭、渕 真悟、田渕 雅夫、竹田 美和、本田善央、山口雅史、天野 浩

    応用物理学会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:同志社大学   Country:Japan  

    気相成長における原子レベルその場観察の必要性
    気相成長における原子レベル表面反応解析の必要性
    *C O H 混入の無いALE成長の実現
    *各結晶面での表面反応過程の解明
    *歪緩和過程の実時間観測

  314. Future prospects of nitride-based photovoltaic devices

    Seunga Lee, Takuya Tabata, Shinta Nakagawa, Tomohiro Doi, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    2013 JSAP-MRS Joint Symposia  

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

    1.Understanding the PV properties of InGaN
    2.How to grow high IQE nitride-based PV cell?
    How to grow high quality In-rich InGaN?
    3.How to realize good tunnel junction?

  315. 窒化物半導体デバイスの今後の展望

    天野 浩

    日本機械学会 2013年度年次大会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:岡山大学   Country:Japan  

    *窒化物半導体はどれくらい市場浸透しているか?
    *窒化物半導体LEDの現状と将来性
        照明用に必要な要件
        未来の照明用LED実現のための取り組み
    *未来の窒化物半導体デバイス開発
        パワーデバイス
        太陽光発電素子

  316. LED開発の現状と照明の将来

    天野 浩

    照明学会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:名古屋大学   Country:Japan  

    今後大きな市場拡大が見込まれる中国等では、自然とLED関係者のモチベーションは高められる。一方今後大きな市場拡大は見込まれない我が国で、研究者が高いモチベーションを維持するのは容易ではない。今後はシーズオリエンテッドからニーズオリエンテッド、すなわちユーザー、システムサイド、或いは行政からの要求やアイディアが、高い国際競争力の新製品を生み出す原動力となる。

  317. Growth of InGaN-based multiple-quantum-well structures by Increased pressure metalorganic vapor phase epitaxy and atomic layer epitaxy International conference

    Hiroshi Amano

    ICNS 10 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Japan  

    The commercialization of AlInGaN-based devices now extends from low-In-content InGaN to AlN. The remaining compositional region that has not yet been commercialized is In-rich InGaN and InN. In-rich InGaN is also very attractive, for example, it is essential for the fabrication of next-generation general lighting systems with high luminous efficacy and high color rendering index as well as high-efficiency multiple-junction photovoltaic top cells. InN-channel heterostructured field effect transistor is expected to pave the way to realizing THz transistors because of their high saturation velocity and high electron mobility. To realize such novel devices, the development of new growth technologies is indispensable.
    From the thermodynamic viewpoint, high-pressure MOVPE is undoubtedly highly suitable for the growth of In-rich InGaN because the high-pressure atmosphere suppresses the decomposition of InGaN and InN at the surface. However, owing to the increase in the unwanted parasitic reaction between metalorganics and ammonia with the increase in gas density and thermal conductivity upon increasing the reactor pressure, it has been difficult to grow high-quality InGaN quantum wells by high-pressure MOVPE. To overcome this problem, we have successfully developed a new high-pressure MOVPE system that can be operated at reactor pressures of up to 10 atm. In addition, the parasitic reaction between metalorganics and ammonia can be minimized. An InGaN-based MQW grown at 6 atm exhibits strong long wavelength PL emission with a peak wavelength 120 nm longer than that grown at 1 atm. Details of the new high-pressure MOVPE system and control of the chemical kinetics and fluid dynamics will be discussed.

  318. グリーンデバイス材料としての窒化物半導体の現状と今後の展開

    天野 浩

    第7回TIAナノグリーンセミナー 

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    Event date: 2013.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:(独)物質・材料研究機構 並木地区   Country:Japan  

    窒化物LEDの現状

  319. さまざまな基板上へのGaN系LEDの現状と展望

    山田貴也、名和健吾、佐野智崇、田畑拓也、久志本真希、光成  正、鞠 光旭、本田善央、山口雅史、天野 浩

    ワイドギャップ半導体の基板から展開するデバイス 

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    Event date: 2013.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都テルサ 西館 3F第1会議室   Country:Japan  

    Si サファイア GaN基板上のLEDの比較

  320. Blue and Green Light-Emitting Diodes on Na-Flux-Grown GaN Substrate Using Point Seed Method International conference

    Tomotaka Sano, Tomohiro Doi, Shunko Albano Inada, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Mamoru Imade and Yusuke Mori

    European MRS 

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    Event date: 2013.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

    LEDs on Na-flux grown GaN

  321. Growth of GaN and InGaN by MOVPE under reactor pressure of up to 8 atm International conference

    Tomohiro Doi, Yoshio Honda, Masahito Yamaguchi, and Hiroshi Amano

    The 6th Asia-Pacific Workshop on Widegap Semicondcutors 

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    Event date: 2013.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

    MOVPE growth of InGaN by high pressure MOVPE

  322. Conference on LED and its industrial application '13 International conference

    Hiroshi Amano

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    Event date: 2013.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

    Introduction to LEDIA'13

  323. Introductory Talk on In-rich InGaN

    Hiroshi Amano

    JSAP 37.1 Growth of In-rich InGaN and its application  

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    Event date: 2013.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

    Growth of In-rich InGaN

  324. 「省・創エネを実現する窒化物半導体」

    天野 浩

    第8回「グリーンエネルギーシステム実証研究会」  

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:坂田・平田ホール(理学南館)1階セミナールーム   Country:Japan  

    窒化物デバイスの紹介

  325. 照明用白色LEDの現状と次世代LEDの開発

    天野 浩

    電子ジャーナル  

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:連合会館(東京・御茶ノ水)   Country:Japan  

    市場概況、歴史と現状、未来

  326. Future prospects of nitride-based photovoltaic devices

    HIroshi Amano

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    Event date: 2013.1

    Language:English   Presentation type:Symposium, workshop panel (nominated)  

    Venue:EPOCHAL  TSUKUBA    Country:Japan  

  327. 窒化物半導体を用いた太陽光発電の現状と将来性

    天野 浩

    応用物理学会量子エレクトロニクス研究会 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:上智大学 軽井沢セミナーハウス   Country:Japan  

    窒化物半導体を用いた太陽光発電の現状と将来性の紹介

  328. InGaN系太陽光発電素子

    天野 浩

    明日のくらしを考える 特別シンポジウム―次世代省エネルギー・創エネルギーデバイス・材料の開発動向と課題― 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:明治大学 駿河台校舎 リバティタワー15階 1156教室(   Country:Japan  

    InGaN系半導体による太陽電池の現状

  329. 窒化物半導体デバイスの現状及び今後の発展のための放射光測定への期待

    天野 浩

    第2回名古屋大学シンクロトロン光研究センターシンポジウム 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:野依記念学術交流館   Country:Japan  

    その場観察手法の紹介

  330. 窒化物半導体エピ成長の基礎と光デバイス

    天野 浩

    日本学術振興会第162 委員会 第6回ワイドバンドギャップ半導体スクール 

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    Event date: 2012.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ホテルサンバレー伊豆長岡「富士見」   Country:Japan  

    MOVPE成長の基礎とLED製造方法

  331. 深紫外LED開発におけるLEDシミュレーションソフトの活用

    天野 浩

    日本学術振興会第162委員会 第81回研究会 

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    Event date: 2012.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:主婦会館プラザエフ   Country:Japan  

    平成18年度~22年度実施特定領域研究窒化物光半導体のフロンティアの成果をもとにしたSiLENSeの活用方法の紹介

  332. 青色LED紛争とその後の日本

    天野 浩

    名古屋大学「先端イノベーション研修」 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名大インキュベーション施設プレゼンルーム   Country:Japan  

    窒化物半導体デバイスに関する特許紛争の詳細

  333. 創成期の窒化物半導体研究

    天野 浩

    応用物理学会第73回応用物理学会学術講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:愛媛大学、松山   Country:Japan  

    我が国における創成期の窒化物半導体研究の歴史

  334. 窒化物半導体デバイスの現状と今後の元素戦略

    本田善央、山口雅史、天野 浩 

    日本学術振興会素材プロセッシング第69委員会 第2分科会第66回研究会 

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    Event date: 2012.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京大学本郷キャンパス 山上会館 大会議室   Country:Japan  

    NEDOを中心とした窒化物半導体の研究旧開発のサポート状況の紹介

  335. Fabrication of High-Internal-Quantum-Efficiency Light Emitting Diodes on High Quality Bulk GaN Substrate International conference

    H. Amano, M. Yamagcuhi, Y. Honda, M. Imade, and Y. Mori

    Workshop on Frontier Photonic and Electronic Materials and Devices -2012 German-Japanese-Spanish Joint Workshop-, Berlin, Germany, Invited 

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    Event date: 2012.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Berlin, Germany   Country:Japan  

  336. 窒化物半導体エピタキシャル成長の新展開

    本田善央、山口雅史、天野 浩, 今出 完、森 勇介, 岩谷素顕

    第137回結晶工学分科会研究会 

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    Event date: 2012.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:京都テルサ   Country:Japan  

    GaNの様々な結晶成長技術

  337. In and impurity incorporation in InGaN International conference

    T. Doi, T. Ohata, T. Sano, Y. Honda, M. Yamaguchi, H. Amano, M. Imade, Y. Mori, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki

    ICMOVPE-XVI 

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    Event date: 2012.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Busan, Korea   Country:Korea, Republic of  

    高In組成InGaNの結晶成長の面方位依存性

  338. Challenge for the growth of high-In-content InGaN

    T. Doi, T. Ohata, T. Tabata, S. Nakagawa, Y. Kawai, Y. Honda, M. Yamaguchi, H. Amano, M. Imade, Y. Mori, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki

    III-V and III-N-based High Efficiency Solar Cells for Future Energy Harvesting 

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    Event date: 2012.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

    高In組成InGaN成長

  339. 様々なⅢ族窒化物半導体デバイスの現状と結晶成長の課題

    天野 浩

    第4回窒化物半導体結晶成長講演会 

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    Event date: 2012.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京大学生産技術研究所   Country:Japan  

    GaNのLED応用 PV応用

  340. 窒化物LEDの基礎知識と開発動向

    天野 浩

    Optics & Photonics International 2012 特別セミナー 

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    Event date: 2012.4

    Language:Japanese   Presentation type:Symposium, workshop panel (nominated)  

    Venue:パシフィコ横浜   Country:Japan  

    LEDの開発動向の概説

  341. 高In組成InGaN実用化にむけて

     天野 浩、山口雅史、本田善央、谷川智之、坂倉誠也、大畑俊也、田畑拓也

    シンポジウム 窒化物半導体における特異構造の理解と制御 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Symposium, workshop panel (nominated)  

    Venue:早稲田大学   Country:Japan  

    高In組成InGaN成長

  342. LED開発の過去・現状及び将来

    天野 浩

    『光の日』公開シンポジウム 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue: 森戸記念館 第1フォーラム・第2フォーラム   Country:Japan  

    名大でのGaN系LEDの創成期のころの昔話

  343. 窒化物を用いたLED 及び太陽電池の現状と将来性

    天野 浩

    「グリーン&ライフイノベーションに向けた次世代ナノ材料・デバイス」  

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    Event date: 2012.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:産業技術総合研究所・臨海副都心センター   Country:Japan  

    GaNのLEDと太陽電池応用

  344. 理論効率60%超のInGaN系太陽電池★徹底解説

    天野 浩

    Electronic Journal 第1062回 Technical Seminar 

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    Event date: 2012.1

    Language:Japanese   Presentation type:Symposium, workshop panel (nominated)  

    Venue:総評会館   Country:Japan  

    GaNの太陽電池応用

  345. Second- and third-generation nitride-based LEDs and  challenge for future photovoltaic applications

    T. Sano, T. Ohata, S. Sakakura,T. Tanikawa,Y. Honda, M. Yamaguchi, and H. Amano, M. Mori, M. Iwaya, M. Imade, Y. Mori

    3rd Global COE International Symposium Electronic Devices Innovation  

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    Event date: 2011.12

    Language:English   Presentation type:Symposium, workshop panel (nominated)  

    Venue:Life Hall, Osaka   Country:Japan  

    GaN基板上のLED

  346. Effect of high-quality GaN substrates on the improvement of  performance of group-III-nitride-based devices

    Hiroshi Amano, Takayuki Sugiyama, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Yasuhiro Isobe, Akira Mishima, Takafumi Makino, Motoaki Iwaya, Mamoru Imade, Yasuo Kitaoka, Yusuke Mori

    ECO-MATES2011 

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    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Hotel Hankyu Expo Park   Country:Japan  

    GaN基板の優位性確認

  347. 紫外発光素子最前線

    天野 浩

    月刊OPTRONICS特別セミナー 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Symposium, workshop panel (nominated)  

    Venue:東京・四谷 主婦会館プラザエフ   Country:Japan  

    UV LED開発の現状と将来性

  348. Contribution of Atomic Layer Epitaxy of Group III Nitrides To Future Reduction of Fossil Fuel Consumption

    Hiroshi Amano

    4thInternational Symposium on Atomically controlled fabrication technology 

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    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Osaka University Nakanoshima Center, Osaka   Country:Japan  

    GaNのALE

  349. Seeking New Application Fields Using Group III Nitrides International conference

    Hiroshi Amano

    2011 International Conference on Solid State Devices and Materials 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Nagoya   Country:Japan  

    GaNのHFET応用

  350. 世界を照らすLED

    天野 浩

    テクノ・フェア名大2011 

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    Event date: 2011.9

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:名大豊田講堂   Country:Japan  

    名大におけるLED開発

  351. 日本のエレクトロニクス産業の歴史に学ぶ窒化物半導体開発の未来 

    天野 浩

    第5 回 窒化物半導体の高品質結晶成長とその素子応用 

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    Event date: 2011.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東北大学金属材料研究所   Country:Japan  

    日本のエレクトロニクス産業の問題点と課題解決への提言

  352. 加圧MOVPE及び窒素ラジカルMBEを用いた高In組成InGaN成長

    大畑 俊也、田畑 拓也、坂倉 誠也、谷川 智之、河合 洋次郎、本田 善央、山口 雅史、天野 浩

    日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会 第75回研究会 

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    Event date: 2011.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:キャンパス・イノベーションセンター東京    Country:Japan  

    MBE及びMOVPEを用いた太陽光発電素子

  353. High In Content InGaN for Solar Cell Applications International conference

    Hiroshi Amano

    ICNS9 

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    Event date: 2011.7

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:UK   Country:United Kingdom  

    InGaN系太陽光発電素子

  354. Review of R&D and technology trend of LEDs in Japan What we learn from the history ? International conference

    Hiroshi Amano

    LEDEXPO &OLED EXPO Seminar and Forum 2011 

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    Event date: 2011.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Seoul, Korea   Country:Korea, Republic of  

    我が国のエレクトロニクス産業の現状と課題解決への提言

  355. Impact of high temperature growth of AlGaN by MOVPE and  its application to high efficiency UV/DUV light emitting devices International conference

    Hiroshi Amano

    14th European Workshop on Metalorganic Vapor Phase Epitaxy 

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    Event date: 2011.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Wrocław, Poland    Country:Poland  

    全組成域AlGaInN成長

  356. 照明用白色LEDの現状と次世代LED開発

    天野 浩

    Semi Forum Japan2011 

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    Event date: 2011.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:グランキューブ大阪   Country:Japan  

  357. Internal quantum efficiency of nitride-based light emitting devices International conference

    H. Amano, T. Tabata, G. J. Park, T. Murase, T. Sugiyama, T. Tanikawa, Y. Kawai, Y. Honda, M. Yamaguchi, K. Takeda, K. Ban, J. Yamamoto, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, Y. Mori

    APWS-2011 

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    Event date: 2011.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Toba, Japan   Country:Japan  

    LEDの内部量子効率

  358. 車載用LEDの現状とGaN系光・電子デバイスの可能性

    天野 浩

    日本学術振興会 薄膜第131委員会 第249回委員会・第255回研究会 

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    Event date: 2011.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:愛知県産業労働センター   Country:Japan  

    特に車載用LEDの現状

  359. Recent status and future prospects of AlGaN-based UV/DUV LEDs and InGaN-based blue LED  International conference

    Hiroshi Amano

    The 5th International Conference on LED and Solid State Lighting (LED 2011) 

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    Event date: 2011.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Seoul, Korea   Country:Korea, Republic of  

    可視~紫外LED開発の現状

  360. Growth of AlGaInN over the Whole Compositional Range By High Temperature and Raised Pressure MOVPE System   International conference

    H. Amano, G. J. Park, T. Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nonaka, K. Nagata, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki

    MSM XVII 

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    Event date: 2011.4

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Cambridge, UK   Country:United Kingdom  

    AlGaInNのMOVPE成長

  361. Plasma Assisted Molecular Beam Epitaxial Growth of Thick InGaN Films and InGaN Nanowires for Future Light Source  International conference

    T. Tabata, Y. Kawai, Y. Honda, M. Yamaguchi, and H. Amano, Z. H. Wu, Y.-Y. Fang, and C. Q. Chen , H. Kondo and M. Hori

    ISPlasma 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Nagoya Institute of Technology   Country:Japan  

    MBEによるGaNの成長

  362. IQE and EQE of the nitride-based UV/DUV LEDs International conference

    H. Amano, G.J. Park, T. Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki

    CLEO2011 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Baltimore, USA   Country:United States  

    LEDの内部量子効率に関する発表

  363. LED電球の現状と今後の開発への期待

    天野 浩

    CILAC 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋栄ビル12階   Country:Japan  

    LED電球開発の歴史と展望

  364. 窒化物半導体を用いた太陽電池の現状と将来性

    天野 浩、山口雅史、本田善央、岩谷素顕、上山 智、竹内哲也、赤﨑 勇

    日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会 68回委員会・第72回研究会 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:静岡県伊東市サンハトヤ    Country:Japan  

    窒化物半導体を用いた太陽光発電素子の将来に関する概説。

  365. Recent Developments and Future Prospects of LED Technologies for Displays and General Lighting International conference

    Hiroshi Amano

    The 17th International Display Workshops 

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    Event date: 2010.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Fukuoka, Japan   Country:Japan  

    LED 開発の現状と将来性

  366. 紫外~赤色LED究極効率を目指した窒化物半導体結晶成長技術

    東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  367. 白色LEDの現状と将来への課題

    有機EL討論会5周年記念 公開シンポジウム[未来を拓く有機EL・LED] 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  368. 次世代・照明太陽電池創成に向けた取り組み

    天野 浩

    平成22年度東海工学教育協会地区大会プログラム 

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    Event date: 2010.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名城大学天白キャンパス   Country:Japan  

    LED 太陽光発電素子への応用

  369. ③GaNのLDへの応用

    Electronic Journal 第592回 Technical SeminarGaNデバイスの最前線★徹底解説 

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    Event date: 2010.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  370. Recent development and future prospects of the fabrication of InGaN-based solar cells International conference

    Korea-Japan Workshop on Semiconductors for Energy Saving and Harvesting 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  371. 白色LEDの現状と将来の可能性

    (社)照明学会 光関連材料・デバイス研究専門部会次世代固体照明光源に関する研究調査委員会 公開研究会「次世代固体照明光源の最新動向」 

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    Event date: 2010.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  372. Past, present and future prospects of group III nitride-based light emitting diodes- What is the origin of the difficulties, how to solve them ? - International conference

    IWN2010 

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    Event date: 2010.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  373. 総合討論 ここまでわかった!AlGaN系光デバイスの物理

    2010年秋季 第71回応用物理学会学術講演会 シンポジウム結晶工学分科会企画「ワイドギャップ窒化物AlGaNの結晶評価と深紫外光デバイス応用」 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  374. プラズマによるGaN未来照明・パワーデバイスの革新

    天野 浩、杉山 貴之、河合洋次郎、本田 善央、山口 雅史

    応用物理学会 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  375. Expansion of the emission wavelength of nitride-based light emitting diodes- From DUV to IR International conference

    International Conference on LED-IT 

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    Event date: 2010.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  376. High-Temperature MOVPE of AlGaN and Raised Pressure MOVPE of High In-content GaInN International conference

    IUMRS-ICEM2010 

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    Event date: 2010.8

    Language:English   Presentation type:Oral presentation (invited, special)  

  377. Atomic Layer Epitaxy of AlN and AlGaN and Raised Pressure MOVPEFor the Growth of High In-Content GaInN International conference

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    Event date: 2010.8

    Language:English   Presentation type:Oral presentation (invited, special)  

  378. ナイトライドデバイスのこれからの10年を展望して

    応用物理学会結晶工学分科会主催第1回 結晶工学講演会半導体デバイスの基盤をなす結晶工学 

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    Event date: 2010.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  379. 「ワイドギャップ窒化物半導体基板への期待」

    日本学術振興会 結晶成長の科学と技術第161委員会ワイドギャップ半導体光・電子デバイス第162委員会合同委員会 

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    Event date: 2010.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  380. Recent development of high efficiency UV LEDs and achievement of UV LDs International conference

    Taiwan Solod State Lighting 

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    Event date: 2010.6

    Language:English   Presentation type:Oral presentation (invited, special)  

  381. Recent development and future prospects of the fabrication of GaInN-based solar cells

    ISCS2010 

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    Event date: 2010.6

    Language:English   Presentation type:Oral presentation (invited, special)  

  382. Atomic layer epitaxy of GaInN and AlGaN by high pressure MOVPE International conference

    APS Spring Meeting, 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  383. How can we improve performance of nitride-based devices using plasma technology ?

    IC-PLANTS 2010 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (invited, special)  

  384. New MOVPE system for next generation AlGaInN growth International conference

    The 4th International Conference on LED and Solid State Lighting (LED 2010) 

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    Event date: 2010.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:China  

  385. 窒化物半導体応用の波長範囲の拡大

    天野 浩

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    Event date: 2009.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  386. 光デバイス II  (9) 紫外発光デバイス

    天野 浩

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    Event date: 2009.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  387. Past, present and future prospects of group III nitride based light emitting devices

    ICMAP 2009 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  388. Revolutions in Solid State Lighting Technology

    International Workshop on EEWS 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  389. GaN基板ウエハ実現の鍵を握る結晶育成・加工技術 ~その現状と課題、及び将来展望~

    天野 浩

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    Event date: 2009.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  390. Growth and Conductivity Control of High-Quality GaInN for the Realization of High Efficiency Photovoltaic Devices

    POEM2009 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  391. 世界を変えるGaN発光デバイス ~低炭素社会実現の救世主となるために~

    天野 浩

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    Event date: 2009.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  392. Growth and conductivity control of high quality AlGaN and its application to high performance ultraviolet laser diodes

    SIMC-XV 

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    Event date: 2009.8

    Language:English   Presentation type:Oral presentation (invited, special)  

  393. 持続可能な社会システム構築のための窒化物半導体の役割

    天野 浩

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    Event date: 2009.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  394. 窒化物半導体LEDのエピタキシャル成長とLED高効率化の最新動向

    天野 浩

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    Event date: 2009.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  395. 窒化物半導体LED開発の歴史、現状と今後の展望 および微細構造観察・元素分析への期待

    天野 浩

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    Event date: 2009.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  396. Challenge for short wavelength semiconductor UV laser diodes

    SPIE Photonics West 

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    Event date: 2009.1

    Language:English   Presentation type:Oral presentation (invited, special)  

  397. 窒化物半導体の結晶成長とデバイス応用に関する研究

    天野 浩

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    Event date: 2008.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  398. 光デバイス II  (9) 紫外発光デバイス

    天野 浩

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    Event date: 2008.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  399. GaNのLDへの応用

    天野 浩

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    Event date: 2008.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  400. 窒化物半導体の新しい応用を目指して

    天野 浩

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    Event date: 2008.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  401. Research on the Key Technology of Nitride-Based UV LED and LDs

    Summer School 2008 on Wide-bandgap Semiconductor Physics and Devices 

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    Event date: 2008.8

    Language:English   Presentation type:Oral presentation (invited, special)  

  402. Growth of Non Polar/Semi Polar Nitrides and Devices International conference

    Summer School 2008 on Wide-bandgap Semiconductor Physics and Devices 

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    Event date: 2008.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:China  

  403. シミュレータを用いた窒化物半導体光デバイスの動作シミュレーションおよび実際との比較

    天野 浩、永松健太郎、飯田大輔、竹田健一郎、都築宏俊、早川 武雅、岩谷素顕、上山 智、赤﨑 勇

     More details

    Event date: 2008.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  404. High efficiency UV LEDs and LDs

    5th China International Forum on Solid State Lighting 

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    Event date: 2008.7

    Language:English   Presentation type:Oral presentation (invited, special)  

  405. Short wavelength semiconductor laser diodes

    Japan- Brazil Memorial Symposium on Science and Technology for the Celebration of 100 Years of Japanese Immigration in Brazil 

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    Event date: 2008.6

    Language:English   Presentation type:Oral presentation (invited, special)  

  406. Growth of Group III Nitrides For UV and Green Light Emitting Devices

    The 4th Asian Conference on Crystal Growth and Crystal Technology 

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    Event date: 2008.5

    Language:English   Presentation type:Oral presentation (invited, special)  

  407. 学生が創ったイノベーション ~青色発光ダイオード誕生の秘密~

    天野 浩

     More details

    Event date: 2008.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  408. Theoretical and experimental aspects of the nitride-based UV LEDs and LDs

    KOPTI Seminar 

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    Event date: 2008.4

    Language:English   Presentation type:Oral presentation (invited, special)  

  409. Growth of Thick InGaN with the Aim of Realizing Bright Green LED and LD

    The 2nd International Conference on Display and Solid State Lighting 

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    Event date: 2008.1

    Language:English   Presentation type:Oral presentation (invited, special)  

  410. Theoretical and experimental aspects of the nitride-based UV light-emitting devices

    UKNC Meeting 

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    Event date: 2008.1

    Language:English   Presentation type:Oral presentation (invited, special)  

  411. ワットクラス超高出力紫外レーザダイオードの実現にむけて

    天野 浩、岩谷 素顕、上山 智、赤﨑 勇

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    Event date: 2008.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  412. 青色発光LEDの開発を通して研究するたのしみ

    天野 浩

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    Event date: 2008.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  413. LEDの各種基板への作製の取り組みとその比較・評価

    天野 浩

     More details

    Event date: 2007.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  414. ナイトライドを用いた紫外LEDおよび緑色LEDの 高効率化に向けて

    天野 浩

     More details

    Event date: 2007.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  415. AlGaN-based UV light emitting devices

    20th Annual Meeting of the IEEE Lasers and Electro-Optics Society 

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    Event date: 2007.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  416. Doping of high mole fraction p-type AlGaN -Mg in AlGaN-

    Challenges facing ZnO and GaN 

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    Event date: 2007.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  417. Growth and Properties of Non-Polar Nitrides on Various Substrates

    7th International Conference of Nitride Semiconductors 

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    Event date: 2007.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  418. 紫外発光素子への期待とIII族窒化物半導体を用いた紫外発光素子の高性能化

    天野 浩、岩谷 素顕、上山 智、赤﨑 勇

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    Event date: 2007.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  419. SiC基板のLED/LDへの応用

    天野 浩、上山 智

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    Event date: 2007.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  420. High temperature metalorganic vapor phase epitaxial growth of AlN and AlGaN for fabrication of high performance UV/DUV emitters

    IVC17 / ICSS13 and ICN+T 2007 

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    Event date: 2007.7

    Language:English   Presentation type:Oral presentation (invited, special)  

  421. 窒化物系半導体の最近の動向と課題

    天野 浩

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    Event date: 2007.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  422. <デバイスの立場から> 窒化物半導体光・電子デバイス 極限機能創出のための結晶成長の技術課題

    天野 浩

     More details

    Event date: 2007.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  423. High temperature growth of AlN and AlGaN for UV/DUV devices

    The 3rd Asia-Pacific Workshop on Widegap Semiconductors 

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    Event date: 2007.3

    Language:English   Presentation type:Oral presentation (invited, special)  

  424. LEDの各種基板への作製の取り組みとその比較・評価

    天野 浩

     More details

    Event date: 2007.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  425. Key issues for achieving high-efficiency nonpolar nitride-based light emitting diodes

    CDL 2007 

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    Event date: 2007.2

    Language:English   Presentation type:Oral presentation (invited, special)  

  426. Present and future prospects of nitride-based UV emitters<BR>

    APOC2006 

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    Event date: 2006.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  427. 窒化物半導体を用いた短波長発光デバイス

    天野 浩、クリシュナン・バラクリシュナン,岩谷素顕,上山 智,赤﨑 勇,丸山久明、野呂匡志,高木俊, 坂東 章

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    Event date: 2006.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  428. 青色半導体レーザが出来るまで徹底解説

    天野 浩

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    Event date: 2006.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  429. High temperature growth of AlN and AlGaN by metalorganic vapor phase epitaxy

    ISGN-1 

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    Event date: 2006.6

    Language:English   Presentation type:Oral presentation (invited, special)  

  430. Education and Research at Meijo Nano-factory

    MRS Spring 2006 

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    Event date: 2006.4

    Language:English   Presentation type:Oral presentation (invited, special)  

  431. 青・紫外LEDのため結晶成長技術と光取り出し効率の向上・高出力化手法 ナイトライド系半導体レーザの基礎と発光ダイオードの光取り出し効率の向上手法

    天野 浩

     More details

    Event date: 2006.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  432. 非シリコン半導体の現状と展望、Ⅲ族窒化物半導体光・電子デバイスの展望

    天野 浩

     More details

    Event date: 2006.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  433. ナノナイトライド構造の作製とデバイス応用

    天野 浩

     More details

    Event date: 2006.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  434. III族窒化物半導体デバイスの展望

    天野 浩

     More details

    Event date: 2006.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  435. High-temperature MOVPE growth of AlN and AlGaN for UV/DUV optoelectronics

    5th Akasaki Research Center Symposium 

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    Event date: 2005.12

    Language:English   Presentation type:Oral presentation (invited, special)  

  436. MOVPE法による厚膜GaNおよびAlN成長

    天野 浩、岩谷素顕、上山 智、赤﨑 勇

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    Event date: 2005.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  437. LD への展開 -紫外用光源はナイトライドで置き換えられるか-

    天野 浩、岩谷素顕、上山 智、赤﨑 勇

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    Event date: 2005.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  438. ELO of AlGaN for Fabrication of UV/deep UV Devices

    H. Amano, M. Iwaya, S. Kamiyama and I. Akasaki,

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    Event date: 2005.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  439. 日本におけるナイトライドLED開発の歴史と今後の展望

    天野 浩

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    Event date: 2005.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  440. ナイトライド系LED性能の現状 ~光取り出し効率と温度依存性~

    天野 浩

     More details

    Event date: 2005.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  441. Trend of substrate materials for nitride epitaxy

    The 6th Topical Workshop on Heterostructure Microelectronics 

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    Event date: 2005.8

    Language:English   Presentation type:Oral presentation (invited, special)  

  442. 高輝度・高照度LEDの開発とその応用

    天野 浩

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    Event date: 2005.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  443. Ⅲ族窒化物半導体による紫外光源の開発動向

    天野 浩、岩谷素顕、上山 智、赤﨑 勇

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    Event date: 2005.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  444. -ハイパワー化に向けた-ナイトライドLEDの構造・動作原理と性能向上技術

    天野 浩

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    Event date: 2005.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  445. 期待されるLEDとその応用 紫外LEDの研究開発最新動向

    天野 浩

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    Event date: 2005.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  446. AlN、AlGaNの高温MO-VPE成長と紫外半導体レーザ

    天野 浩、Krishnan Balakrishnan、岩谷素顕、上山 智、赤﨑 勇

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    Event date: 2005.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  447. 大学の実験室から青色発光ダイオードが生まれるまで

    天野 浩

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    Event date: 2004.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  448. En route to 80% external quantum efficiency nitride-LEDs

    1st OSRAM OS Workshop on Gallium Nitride 

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    Event date: 2004.11

    Language:English   Presentation type:Oral presentation (invited, special)  

  449. Defect and stress control of AlGaN and fabrication of high performance UV light emitters

    The Electrochemical Society 

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    Event date: 2004.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  450. Facet controlled epitaxial lateral overgrowth of AlxGa1-xN

    The Electrochemical Society 

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    Event date: 2004.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  451. ナノファクトリーにおけるナノナイトライド研究 -新世代半導体が拓く未来社会-

    天野 浩

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    Event date: 2004.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  452. Growth and fabrication of nitride-based UV devices on various substrates

    4th INTERNATIONAL CONFERENCE ON PHYSICS OF LIGHT-MATTER COUPLING IN NANOSTRUCTURES 

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    Event date: 2004.6

    Language:English   Presentation type:Oral presentation (invited, special)  

  453. GaNの結晶成長における低温堆積緩衝層

    天野 浩

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    Event date: 2004.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  454. History and future prospects of nitride-based LEDs and solid state lighting

    ChinaSSL2004 

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    Event date: 2004.3

    Language:English   Presentation type:Oral presentation (invited, special)  

  455. Critical issues for achieving high efficiency/high power nitride-based UV devices

    ISBLLED2004 

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    Event date: 2004.3

    Language:English   Presentation type:Oral presentation (invited, special)  

  456. 高効率,高演色性でバックライトを変えるLEDの進展

    天野 浩

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    Event date: 2004.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  457. Critical Issues for the Development of GaN-Based UV Device

    2004 RCIQE International Seminar for 21st Century COE Program 

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    Event date: 2004.2

    Language:English   Presentation type:Oral presentation (invited, special)  

  458. 紫外発光素子用ナイトライド半導体の開発

    天野 浩

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    Event date: 2004.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  459. Effect of dislocation and light extraction on the performance of AlGaN-based UV light emitting devices

    Photonics West 

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    Event date: 2004.1

    Language:English   Presentation type:Oral presentation (invited, special)  

  460. 格子不整合基板上へのナイトライドの結晶成長における低温プロセスの果たした役割

    天野 浩

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    Event date: 2004.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  461. ナイトライド集積型表示デバイスの期待と課題

    天野 浩

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    Event date: 2001.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  462. 加工基板上への結晶成長

    天野 浩、岩谷素顕、新田州吾、上山 智、赤﨑 勇

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    Event date: 2001.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  463. 青色(紫外光)発光ダイオード

    天野 浩

     More details

    Event date: 2001.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  464. Present and Future Nitride Based Devices

    SSDM2001 

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    Event date: 2001.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  465. Control of stress and defects in nitrides

    ICCG-13 

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    Event date: 2001.8

    Language:English   Presentation type:Oral presentation (invited, special)  

  466. Nitride-Based UV-Light Emitters

    2001OSA Annual Meeting 

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    Event date: 2001.1

    Language:English   Presentation type:Oral presentation (invited, special)  

  467. Control of strain and defects in nitride MOVPE

    MRS Fall 2000 

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    Event date: 2000.12

    Language:English   Presentation type:Oral presentation (invited, special)  

  468. Past, Present and Future of the Growth of Group III Nitrides on Sapphire

    The 1st Asian Conference on Crystal Growth and Crystal Technology Sendai 

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    Event date: 2000.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  469. Crystal growth of group III nitridesand their application to blue, violet and UV optoelectronics

    2000 FRONTIER SCIENCE RESEARCH CONFERENCESCIENCE and TECHNOLOGY of NITRIDE MATERIALS 

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    Event date: 2000.8

    Language:English   Presentation type:Oral presentation (invited, special)  

  470. 高輝度短波長LEDの開発と応用

    天野 浩

     More details

    Event date: 2000.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  471. ナイトライド研究と青色発光素子の実用化

    天野 浩

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    Event date: 2000.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  472. 青色発光デバイス”はどんな応用分野を拓くのか

    天野 浩

     More details

    Event date: 2000.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  473. Growth of high-quality AlxGa1-xN for VUV/UV opto-electronics

    The 2nd International Symposium on Laser 

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    Event date: 2000.5

    Language:English   Presentation type:Oral presentation (invited, special)  

  474. Mass transport process of GaN and reduction of threading dislocations

    2000 US-Japan Mesoscopic Phenomena on Surfaces Park City 

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    Event date: 2000.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  475. 光デバイスと応用(高輝度短波長LEDとLD)

    天野 浩

     More details

    Event date: 2000.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  476. III族窒化物半導体の結晶成長とデバイス

    天野 浩、赤﨑 勇

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    Event date: 2000.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  477. Defect and stress control in group Ⅲ nitrides using low temperature interlayers

    Proceedings of the Third Symposium on Atomic-scale Surface and Interface Dynamics 

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    Event date: 1999.3

    Language:English   Presentation type:Oral presentation (invited, special)  

  478. GaN系デバイスの現状と将来 ―電極に期待するもの ―

    H. Amano and I. Akasaki

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    Event date: 1999.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  479. Crystalline quality of GaN on sapphire and group Ⅲ nitride alloys on GaN studied by X-ray diffraction and TEM

    Symposium in the 45th Spring Meeting 

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    Event date: 1998.3

    Language:English   Presentation type:Oral presentation (invited, special)  

  480. In situ observation of the crystallization process of the low temperature deposited buffer layer on sapphire

    International Workshop on Surface Morphology 

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    Event date: 1998.1

    Language:English   Presentation type:Oral presentation (invited, special)  

  481. Characterization and growth of nitride based quantum structures

    Materials Research Society 1997 Fall Meeting 

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    Event date: 1997.12

    Language:English   Presentation type:Oral presentation (invited, special)  

  482. Structural and Optical properties of Group Ⅲ Nitrides and Their Lasers

    Intl. Conf. on SiC, Ⅲ-Nitrides and Related Materials 

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    Event date: 1997.9

    Language:English   Presentation type:Oral presentation (invited, special)  

  483. Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD International conference

    Abhinay S

    2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019  2019.3 

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    Language:English   Presentation type:Oral presentation (general)  

    researchmap

  484. Theoretical study of the electronic structure of threading edge dislocations in GaN International conference

    Nakano T

    ECS Transactions  2018 

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    Language:English   Presentation type:Oral presentation (general)  

    researchmap

  485. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements International conference

    Piva F

    Proceedings of SPIE - The International Society for Optical Engineering  2020 

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    Language:English   Presentation type:Oral presentation (general)  

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  486. Electronic structure analysis of core structures of threading dislocations in GaN International conference

    Nakano T

    2019 Compound Semiconductor Week, CSW 2019 - Proceedings  2019.5 

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    Language:English   Presentation type:Oral presentation (general)  

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  487. Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes International conference

    Yates L

    Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018  2018.7.24 

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    Language:English   Presentation type:Oral presentation (general)  

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Research Project for Joint Research, Competitive Funding, etc. 32

  1. 有害物質分解システムに向けた高性能紫外線レーザーダイオードの研究

    2016.4 - 2019.3

    J-MOST日中共同研究 

    天野 浩

      More details

    Grant type:Competitive

    AlGaN結晶を用いた紫外線レーザーダイオードの試作

  2. Si基板上のInGaNナノワイヤ太陽電池

    2016.4 - 2018.3

    二国間交流事業(共同研究・セミナー)フランス 

    天野 浩

      More details

    Grant type:Competitive

    Si基板上にGaNナノロッドを成長させ、太陽電池を試作する。

  3. V4(高In組成InGaNの高品質エピタキシャル成長)

    2015.11 - 2018.3

    V4(高In組成InGaNの高品質エピタキシャル成長) 

    天野 浩

      More details

    Grant type:Competitive

  4. 高In組成InGaNの高品質エピタキシャル成長と次世代ディスプレイ・照明及び通信用光源と高効率太陽電池

    2015.4 - 2019.3

    国際科学技術共同研究推進事業(戦略的国際共同研究プログラム:SICORP)V4 

    天野 浩

      More details

    Grant type:Competitive

    加工GaN基板による高In組成InGaN量子ドットの成長

  5. 高性能・高信頼性太陽光発電の発電コスト低減技術開発/革新的新構造太陽電池の研究開発/超高効率・低コストⅢ-Ⅴ化合物太陽電池モジュールの研究開発(窒化物ハイブリッド結晶成)

    2015.4 - 2018.3

    NEDO (高性能・高信頼性太陽光発電の発電コスト低減技術開発) 

    天野 浩

      More details

    Grant type:Competitive

    窒化物半導体窓層他接合太陽電池

  6. 知の拠点あいちプロジェクトE「近未来水素エネルギー社会形成技術開発プロジェクト」

    2015.4 - 2018.3

    知の拠点あいちプロジェクト 

    天野 浩

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    Grant type:Competitive

    GaNナノロッドLEDによる次世代ディスプレイ試作

  7. 新規結晶成長法の探索

    2015.4 - 2018.3

    NEDO FS(窒化ガリウムパワーデバイスの実用化促進等に関する先導研究」 

    本田善央

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    Grant type:Competitive

    HVPE法を用いた高品質ヘテロ接合成長開発と電子デバイスへの応用

  8. B系Ⅲ族窒化物/ダイヤモンド・ハイブリッドデバイスに関する基盤研究

    2015.4 - 2018.3

    学内共同研究 

    本田善央、出来真斗、田中敦之

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    BN系窒化物による新たなMIS型FETの試作

  9. 高品質GaN基板を用いた超高効率GaNパワー・光デバイスの技術開発とその実証

    2014.4 - 2017.3

    未来のあるべき社会・ライフスタイルを創造する技術イノベーション事業 

    天野 浩

      More details

    Grant type:Competitive

    Naフラックス法で作製されたGaN基板上にGaNパワーデバイスの結晶成長を行う。

  10. SIP(戦略的イノベーション創造プログラム)

    2014.4 - 2017.3

    SIP(戦略的イノベーション創造プログラム) 

    天野 浩

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    Grant type:Competitive

  11. SIP(戦略的イノベーション創造プログラム)/次世代パワーエレクトロニクス/GaNに関する拠点型共通基盤技術開発/GaN縦型パワーデバイスの基盤技術開発

    2014.4 - 2017.3

    SIP(戦略的イノベーション創造プログラム) 

    天野 浩

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    Grant type:Competitive

    m面GaN基板上へのパワーデバイス用エピタキシャル成長技術の構築

  12. AlGaN系紫外線発光素子の開発

    2014.4 - 2017.3

    学内共同研究 

    本田善央、出来真斗、久志本真希

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    AlGaN系紫外発光素子の高効率化と高信頼性化

  13. GaN基板上GaN系パワーデバイス開発

    2013.4 - 2018.3

    スーパークラスター プログラム 

    天野 浩

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    Grant type:Competitive

    山口大、福井大サテライトと連携したGaNパワーデバイスの開発

  14. Naフラックス法GaNウェハーを用いた高輝度LED作製

    2011.11 - 2017.3

    学内共同研究 

    本田善央、出来真斗、久志本真希、田中敦之

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    Naフラックス法で作製されたGaN基板上のLED LD開発

  15. 窒化物半導体の原子層エピタキシャル成長技術に関する共同研究

    2010.4 - 2017.3

    学内共同研究 

    本田善央、久志本真希

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    原子層エピタキシャル法を用いた新しいLED作製法及びスパッタリングによるGaNの成長

  16. シリコン基板上の窒化ガリウムヘテロエピタキシャル成長の研究

    2010.2 - 2017.3

    学内共同研究 

    本田善央、久志本真希

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    SI基板上のGaNヘテロエピタキシャル技術構築

  17. 次世代照明等に向けた窒化物半導体等基盤技術開発 /次世代高効率・高品質照明の基盤技術開発

    2009.4 - 2014.3

    NEDOエネルギーイノベーションプログラム  

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    Grant type:Competitive

    次世代高効率・高演色性LEDの開発

  18. LED投光器の光路設計、放熱設計およびその測定

    2009.4 - 2010.3

    国内共同研究 

  19. 超高効率太陽電池研究開発の加速・強化 (高効率集光型多接合太陽電池の開発) 低損傷、低反射表面コーティング技術の確立

    2009.4 - 2010.2

    国立大学法人東京大学⇒豊田工業大学[科学技術振興機構JST科学技術振興調整費「革新 

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    Grant type:Competitive

  20. ポストシリコン超高効率太陽電池の研究開発(広帯域AlGaInN)

    2008.4 - 2015.3

    NEDO 新エネルギー技術開発 革新的太陽光発電技術研究開発 

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    Grant type:Competitive

  21. 高効率光・パワーデバイス部材の開発 〔低消費電力高輝度高演色性LED、環境対応モニタリング用センサーの開発〕

    2008.4 - 2010.3

    (財)科学技術交流財団[文部科学省]地域科学技術振興事業 知的クラスター創成事業( 

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    Grant type:Competitive

  22. 先進プラズマナノ科学研究拠点形成プログラム(広域化プログラム)プラズマナノ科学を基盤とした超高速・超高精度プラズマプロセス技術〔プラズマ制御デバイス集積プロセス〕

    2008.4 - 2010.3

    (財)科学技術交流財団[文部科学省]地域科学技術振興事業 知的クラスター創成事業( 

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    Grant type:Competitive

  23. 高効率光・パワーデバイス部材の開発 〔低消費電力高輝度高演色性LED、環境対応モニタリング用センサーの開発〕

    2008.4 - 2010.3

    国内共同研究 

  24. 窒化物系化合物半導体基板・エピタキシャル成長技術の開発

    2007.4 - 2010.3

    NEDO〔新エネルギー・産業技術総合開発機構〕 ナノエレクトロニクス半導体新材料・新 

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    Grant type:Competitive

  25. 溶液成長AlN単結晶の結晶物性に関する研究

    2006.4 - 2007.3

    国内共同研究 

  26. AlN系MOCVD成長および特性評価に関する研究

    2005.4 - 2007.3

    国内共同研究 

  27. 窒化物半導体の研究

    2005.4 - 2007.3

    国内共同研究 

  28. 極限紫外短波長光半導体の実用化開拓

    2004.4 - 2008.3

    大阪ガス㈱[新エネルギー・産業技術総合開発機構(NEDO)]課題設定型産業技術開発費 

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    Grant type:Competitive

  29. 高効率UV発光素子用半導体開発プロジェクト

    2004.4 - 2007.3

    昭和電工㈱NEDO〔新エネルギー・産業技術総合開発機構〕 

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    Grant type:Competitive

  30. 高品質結晶成長技術の研究

    2002.4 - 2007.3

    大阪ガス㈱[新エネルギー・産業技術総合開発機構(NEDO)] 基盤技術研究促進事業( 

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    Grant type:Competitive

  31. 紫外線レーザーのための超ワイドギャップナイトライド半導体の研究

    2001.4 - 2004.3

    新エネルギー・産業技術総合開発機構(NEDO) 国際共同研究 

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    Grant type:Competitive

  32. 省エネルギー燃焼制御用センサの特性改善に関する研究

    1997.4 - 2001.3

    新エネルギー・産業技術総合開発機構(NEDO) 省エネルギー燃焼制御用センサの特性改 

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    Grant type:Competitive

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KAKENHI (Grants-in-Aid for Scientific Research) 24

  1. GaNのIMPATT格子によるコヒーレントハイパワーTHz源

    Grant number:22H00213  2022.4 - 2027.3

    科学研究費助成事業  基盤研究(A)

    天野 浩

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    Authorship:Principal investigator 

    Grant amount:\41340000 ( Direct Cost: \31800000 、 Indirect Cost:\9540000 )

  2. Growth of high-quality bulk GaN substrate by ammonothermal method

    Grant number:19F19752  2019.7 - 2021.3

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    Authorship:Other 

  3. nGaN nanorod-based energy-harvesting/energy-saving devices/systems

    Grant number:18F18347  2018.11 - 2020.3

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    Authorship:Other 

  4. 分極を有する半導体の物理構築と深紫外発光素子への展開

    2013.4 - 2016.3

    科学研究費補助金  特別推進研究

    天野 浩

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    Authorship:Principal investigator 

  5. 圧力印加MOVPEによる高品質InGaN厚膜成長

    2010.4 - 2013.3

    科学研究費補助金  22246004 基盤研究(A)

    天野 浩

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    Authorship:Principal investigator 

  6. Development of Watt class high power UV laser diodes

    2006.4 - 2011.3

    Grant-in-Aid for Scientific Research 

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    Authorship:Principal investigator 

  7. Growth of dislocation-free GaN on Si substrates for long-life optical devices in opto-electronic integrated circuits

    2006.4 - 2010.3

    Grant-in-Aid for Scientific Research 

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    Authorship:Coinvestigator(s) 

  8. Study of nanostructure fabrication technology for light-wave control

    2006.4 - 2009.3

    Grant-in-Aid for Scientific Research 

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    Authorship:Coinvestigator(s) 

  9. High-Efficiency Nitride-based Power Devices in the Next Generation

    2006.4 - 2008.3

    Grant-in-Aid for Scientific Research 

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    Authorship:Principal investigator 

  10. 紫外発光ダイオードを用いた皮膚病治療システム

    2005.4 - 2006.3

    科学研究費補助金  17650155 萌芽研究

    天野 浩

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    Authorship:Principal investigator 

    光線治療の光源として、中波長紫外線(UV-B)や長波長紫外線(UV-A)を波長域に持つ蛍光管が用いられ、紫外線治療は皮膚疾患の治療として一般化している。様々な皮膚疾患に対して、それぞれある特定の波長の光線を用いることが治療に必要である。名古屋市立大学病院では、現在、波長311-313nmのUV-B波により乾癬の治療を実施している。その光源として用いられているのが、オランダのフィリップス社が開発した蛍光管である。蛍光管を用いた光線治療システムは、大面積での照射が可能であり、また311-313nmのみであるがスペクトル線幅の非常に細い紫外光を得られる特徴がある。しかし、(1)装置が大掛かりで持ち運びできない。(2)装置の設置に数m^2程度の大きな面積が必要である。(3)大面積照射のため正常部位にも照射してしまう。(4)医療従事者の被爆の可能性がある。更に、(5)現在では、スペクトル線幅の非常に細い紫外光は311-313nmのみであり、利用可能な波長が蛍光管によって限定されて波長選択性に乏しい、などの問題点があった。これらを解決する方法として、小型UV光源である半導体発光ダイオード(Light Emitting Diode:LED)が注目される。III族窒化物半導体を用いたUV LEDは急速に開発が進んではいるものの、360nm以下の短波長では、現在も効率は数%程度である。本研究では、市販のUV LEDによる紫外線照射装置を用い、健全細胞よりもUV光に対する感度が高い腫瘍細胞のうち、ヒト急性T細胞性白血病細胞株であるJurkat細胞に対してUV照射を行い、細胞の自発的な死である、いわゆる細胞のアポトーシス、および壊死の状態であるネクローシスが観測されるかどうかを確認することを目的とした。その結果、従来の大型蛍光管を用いたものと同等のアポトーシス及びネクローシスを確認した。

  11. Defect reduction of super widegap semiconductor AlN by high temperature metalorganic vapor phase epitaxy and device applications

    2003.4 - 2006.3

    Grant-in-Aid for Scientific Research 

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    Authorship:Principal investigator 

  12. サファイア基板上へのレーザアシスト超高品質AlNエピタキシャル成長

    2003.4 - 2004.3

    科学研究費補助金  15656008 萌芽研究

    天野 浩

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    Authorship:Principal investigator 

    本萌芽研究は、トリメチルアルミニウムと純窒素を原料に用いた、MOVPE法による高品質AlN単結晶薄膜の成長を目的として行った。

    従来、MOVPE法によるAlN薄膜の成長時の基板温度は、せいぜい1,300℃程度までである。しかし、本申請者は独自の凹凸加工を施したAlNでの表面泳動の実験より、高品質エピタキシャルAlN薄膜成長には、1,800℃以上の高温で製膜することが必要であることを見出した。従来のMOVPE法で1,300℃程度で成長が行われていたのは、窒素原料として反応性の高いアンモニアが用いられていたからであり、本来のエピタキシャル成長温度よりずっと低いことから高品質結晶を得るには至っていない。また研究開始当初は、1,800℃という高温で製膜可能なMOVPE装置部品、特に基板を加熱する為のサセプタがなかった。そこで、炭酸ガスレーザを援用し、基板表面だけ加熱する事により高品質AlNの製膜に必要な1,800℃の確保を試みた。

    しかしながら、使用した炭酸ガスレーザでは、パワーが少ないことから、表面の温度を上げるには至らなかった。そのため、研究計画を根本から再検討し、1,800℃で使用可能なMOVPE装置部品、特に基盤加熱に用いるサセプタ材料を探索した。いくつかの材料のうち、CVD法で製膜したカーボンをコーティングしたグラファイトが安定性・寿命および制御性にすぐれていることが分かった。現在、そのCVDカーボンコーティンググラファイトを使用してAlNの製膜実験を遂行中である。本萌芽研究は、トリメチルアルミニウムと純窒素を原料に用いた、MOVPE法による高品質AlN単結晶薄膜の成長を目的として行った。

    従来、MOVPE法によるAlN薄膜の成長時の基板温度は、せいぜい1,300℃程度までである。しかし、本申請者は独自の凹凸加工を施したAlNでの表面泳動の実験より、高品質エピタキシャルAlN薄膜成長には、1,800℃以上の高温で製膜することが必要であることを見出した。従来のMOVPE法で1,300℃程度で成長が行われていたのは、窒素原料として反応性の高いアンモニアが用いられていたからであり、本来のエピタキシャル成長温度よりずっと低いことから高品質結晶を得るには至っていない。また研究開始当初は、1,800℃という高温で製膜可能なMOVPE装置部品、特に基板を加熱する為のサセプタがなかった。そこで、炭酸ガスレーザを援用し、基板表面だけ加熱する事により高品質AlNの製膜に必要な1,800℃の確保を試みた。

    しかし

  13. Fabrication of nitride-based zero dimensional structure by mass-transport and green laser diode

    2000.4 - 2002.3

    Grant-in-Aid for Scientific Research 

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    Authorship:Coinvestigator(s) 

  14. 光励起及び結合長制御不純物共添加による超低抵抗p型III族窒化物の作製

    2000.4 - 2001.3

    科学研究費補助金  12875006 萌芽的研究

    天野 浩

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    Authorship:Principal investigator 

    GaN系III族窒化物半導体は、サファイアを基板とする場合、本申請者のグループが1986年に開発した成長モード制御法が一般化している。この結晶成長法が基礎となり、伝導性制御が可能となり、1989年には不可能とまで云われたp型結晶及びpn接合が実現した。

    現在、有機金属化合物気相成長法によりGaNにおいて、室温での抵抗率数Ωcm、自由正孔濃度10^<18>cm^<-3>台のp型伝導性結晶が再現性良く得られている。n型結晶は抵抗率10^<-3>Ωcm以下、自由電子濃度10^<19>cm^<-3>台であり、p型結晶の電気的特性は、今だ十分な水準とは云えない。また、よりバンドギャップの大きいAlGaNに至っては、AlNモル分率0.3を超えると、p型伝導性を生じさせるのは現状では極めて困難である。

    アクセプタ不純物としてMgが用いられているが、1.水素により不活性化すること、2.活性化エネルギーが大きいこと、が問題である。1.については、成長後低加速電子線照射処理などにより、ある程度脱水素化することは可能であるが、2.については本質的な問題である。本研究では、これらの問題の解決を探る方法を検討する。

    ドナーであるシリコンをコドープして特性を評価したが、p型の正孔濃度がN_A-N_Dに従い、ドープしたシリコン濃度に従って減少するという、極常識的な結果であった。理論の中には、Mgの形成するアクセプタ準位の形成機構を考慮してコドープの効果を論ずるものも見受けられるが、本実験からは、Mgアクセプタの形成は、水素原子様であり、単純であると推測された。AlGaN中へのMgのドーピングに関しては、二次元正孔形成の可能性が見出され、今後の研究の発展が期待される。

  15. Reduction of threading dislocations in group III nitride grown by vapor phase epitaxy and in-situ monitoring of the grown-in stress

    1999.4 - 2001.3

    Grant-in-Aid for Scientific Research 

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    Authorship:Principal investigator 

  16. All solid state vacuum ultraviolet lasers

    1997.4 - 1999.3

    Grant-in-Aid for Scientific Research 

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    Authorship:Principal investigator 

  17. Fabrication of super sensitive ultraviolet photodetector

    1997.4 - 1999.3

    Grant-in-Aid for Scientific Research 

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    Authorship:Coinvestigator(s) 

  18. Study on the fabrication of group III nitride based devices operated in the uncultivated region

    1995.4 - 1998.3

    Grant-in-Aid for Scientific Research 

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    Authorship:Coinvestigator(s) 

  19. Study on the fabrication and properties of low dimensional structure based on group III nitride semiconductors on GaN substrates

    1995.4 - 1997.3

    Grant-in-Aid for Scientific Research 

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    Authorship:Principal investigator 

  20. シリコンを基板として用いたIII族窒化物大型バルク単結晶の作製に関する研究

    1994.4 - 1996.3

    科学研究費補助金  一般研究B

    赤﨑 勇

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    Authorship:Coinvestigator(s) 


    本研究は、二つのテ-マに大別できる。即ち、(1)OMVPE法或いはMBE法により大面積Si 基板上にGaNを作製し、(2)それを種結晶としてHVPE法によりGaNを高速成長させる事である。(1)について、本研究グル-プは研究開始当初より既にAlN中間層を用いたSi基板上へのGaNの作製の検討をしていたが、最大の問題点はSiとGaNの熱膨張係数最に基づくクラックの発生であった。そこで、本研究では、A.GaNの薄膜化によるクラックの抑制、及びB.一部絶縁層で覆った上への横方向成長、即ちエピタキシャルラテラルオ-バ-グロ-ス (ELO)(西永等)法等の方法を検討し、大面積でしかもクラックの無い単結晶の作製を狙った。(2)について、大型単結晶の作製には、再現性良く、しかも高速成長可能な成長法の開発が必要である。HVPE法では、成長速度が最大0.1mm/hであり、しかも成長速度の再現性に乏しい。本研究では、成長装置を工夫し、出来る限り早い成長速度を実現する事を目的とした。以下、得られた成果を纏める。 (1)OMVPE法によるSi基板上のGaN単結晶の作製サファイアの場合における低温堆積緩衝層と異なり、高温1,100℃程度でAlN単結晶を成長し、その上にGaNを成長することにより、高品質GaNの成長が可能となった。室温において、初めて励起子に基づく遷移が反射光変調スペクトルより確認された。得られた膜は、熱膨張係数の違いにより、強い引っ張り応力を受けていることが分かった。 (2)HVPE法の改良 GaCl_3とTMGaを供給可能な装置を試作し、まずサファイア上に低温堆積緩衝層を用いてOMVPE法で高品質GaNを成長の後、HVPE法でGaN を成長させる事により、再現性良く高品質GaN厚膜の成長が可能である事が分かった。

  21. シリコン基板上への窒化物半導体結晶成長

    1993.4 - 1994.3

    科学研究費補助金 

    赤﨑 勇

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    Authorship:Coinvestigator(s) 

    GaNを中心とするIII族窒化物半導体、AlGaN,GaN及びGaInNは、室温で安定相であるウルツ鉱構造を形成する場合、全て直接遷移型バンド構造を有し、しかもそのバンドギャップが室温で1.9eVから6.2eVと広範囲に亙ることから、特に400nm台の可視短波長、及び紫外光のレ-ザダイオ -ドの実現、或いはフルカラ-発光ダイオ-ドの実現にとって有望である。通常、III族窒化物半導体はサファイア基板上に作製するが、サファイアが絶縁性であること及び堅牢であることなどから、加工の容易な低抵抗材料基板が望まれていた。Siは加工及び低抵抗化が容易であるため、有望な基板用材料である。しかしながら、III族窒化物とSiは結晶構造或いは原子配列周期が異なるため、高品質結晶の作製は容易ではなかった。本研究では、本科学研究費の補助などにより、【.encircled1.】Si基板上への高品質結晶作製のためのMOVPE装置の作製、及び【.encircled2.】Si基板上への高品質結晶作製法の確立を目的として研究を行った。その結果、1.二層流横型MOVPE炉の導入により、極めて制御性のよい成長が可能となった。また、 2.GaN、AlGaN或いはGaInN成長の前に、比較的高温でSi基板上にAlNを中間層として成長することによりサファイア基板上と同程度の高品質結晶の作製が可能であることが明かとなった。しかしながら、熱膨張係数の違いによりクラックが発生してしまうこともわかり、現在までデバイス作製には成功していない。今後、クラック発生を抑制する方策を検討していく予定である。

  22. 窒化物半導体極短波長面発光レ-ザの研究

    1993.4 - 1994.3

    科学研究費補助金  一般研究C

    天野 浩

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    Authorship:Principal investigator 

  23. 窒化物ワイドギャップ半導体の結晶成長の低温化に関する研究

    1991.4 - 1992.3

    科学研究費補助金  一般研究C

    平松 和政

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    Authorship:Coinvestigator(s) 

    1.サファイア基板上に成長させたGaN(0001)単結晶膜上に常圧MOVPE法を用いて、窒素原料ガスとTMIn(トリメチルインジウム)原料ガスを交互に供給することによりInNの成長を試みた。その結果、340〜380℃の低温で単結晶InN単結晶薄膜を成長させることに成功した。1パルス当たりのTMInの供給量が0.22μmolの場合には、Inのドロップレットが発生しRHEEDはハロ-パタ-ンを示すのに対し、TMInの供給量を減少させ NH_3の供給量を増加させるとともにNH_3供給時にはH_2の供給を止めることにより、膜質を改善することができた。また、同様な条件において TMInとNH_3を同時に供給した場合、単結晶が得られなかったことから、原料ガスの交互供給がこの温度での単結晶成長に必要不可欠であることが明らかになった。 2.窒化物半導体の低温での結晶成長をサファイア以外にSi基板上においても実現するために、まず通常の高温(1050℃)で常圧MOVPE法によりSi 基板上にGaNの結晶成長を行った。Si基板上に直接GaNを成長させた場合には、膜は多結晶になり多くの粒状結晶からなることが分かった。他方、Si基板上にSiC中間層(〜200nm)を介して成長さたGaN薄膜は、表面平坦性が良好で単結晶であることが確認された。この結果、SiC中間層がSi基板上の窒化物半導体の結晶成長に重要な役割を果たすことが明らかになった。このことから結晶成長温度の低温化においても中間層の検討が必要であることが示唆された。 3.窒化物半導体による多層構造の作製およびその低温成長の可能性を探るために、まず通常の高温でGaN/Al_xGa_<1-x>Nの多層構造の成長を常圧MOVPE法により試みた。得られた膜をX線回折法等により評価した結果、4.5nm〜60nmの周期をもつ多層構造が GaN(0001)/サファイア基板上に実現していることが判明した。

  24. 高性能GaN系青色LEDの試作研究

    1987.4 - 1989.3

    科学研究費補助金 

    赤﨑 勇

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    Authorship:Coinvestigator(s) 

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Industrial property rights 32

  1. 薄膜基板と半導体装置とこれらの製造方法および成膜装置および成膜方法およびGaNテンプレート

    天野 浩、本田善央、光成 正

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    Applicant:国立大学法人 名古屋大学

    Application no:PCT/JP2016/000895  Date applied:2016.2

    Country of applicant:Domestic  

    方向性スパッタリングを用いたSi基板上への半極性面GaNの成長法

  2. III 族窒化物半導体基板の製造方法及びIII 族窒化物半導体基板

    本田善央、天野浩、松本光二、小野俊昭

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    Applicant:株式会社SUMCO

    Application no:特願2015-222503  Date applied:2015.11

    Country of applicant:Domestic  

    クラックを生じさせないためのSi基板上のGaN成長法

  3. 発光ダイオード素子及びその製造方法

    上山智、天野浩、岩谷素顕、赤﨑勇、西村拓哉、寺前文晴、近藤俊行

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    Applicant:学校法人 名城大学

    Application no:2009-080543  Date applied:2009.3

    Patent/Registration no:5330880  Date registered:2013.8 

    Country of applicant:Domestic  

  4. GaN系化合物半導体の成長方法及び成長層付き基板

    天野 浩、上山 智

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    Applicant:名城大学 スタンレー電気株式会社

    Application no:特願2013-012169  Date applied:2009.2

    Patent/Registration no:5570625  Date registered:2014.7 

    Country of applicant:Domestic  

  5. 発光素子及びその製造方法

    上山智、岩谷素顕、天野浩、赤﨑勇、鈴木敦志、北野司、寺前文晴、近藤俊行

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    Applicant:学校法人名城大学

    Application no:2008-283595  Date applied:2008.11

    Patent/Registration no:5306779  Date registered:2013.7 

    Country of applicant:Domestic  

  6. 2光束干渉露光装置及びそれを用いた2時限微細周期構造

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    Applicant:学校法人 名城大学

    Application no:95105692  Date applied:2006.2

    Patent/Registration no:1406101  Date registered:2013.8 

    Country of applicant:Foreign country  

  7. トランジスタ

    岩谷素顕、上山智、天野浩、赤﨑勇

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    Applicant:学校法人名城大学

    Application no:2005-247824  Date applied:2005.8

    Patent/Registration no:5299805  Date registered:2013.6 

    Country of applicant:Domestic  

  8. 高温用CVD装置

    市岡 幹朗、禅野 由明、山本 高稔、天野 浩

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    Application no:2004-255404  Date applied:2004.9

    Patent/Registration no:4433947  Date registered:2010.1 

    Country of applicant:Domestic  

  9. 無クラックAlNまたはAlGaNの結晶成長方法

    赤﨑勇、天野浩、山口栄雄

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    Application no:2001-176365  Date applied:2001.6

    Patent/Registration no:4183931  Date registered:2008.9 

    Country of applicant:Domestic  

  10. 半導体レーザ及び半導体レーザの製造方法

    赤﨑勇、天野浩、上山智、岩谷素顕、中村亮

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    Application no:2000-198829  Date applied:2000.6

    Patent/Registration no:3455500  Date registered:2003.6 

    Country of applicant:Domestic  

  11. 半導体素子の製造方法及び半導体素子

    新田州吾、湯川洋平、小嵜正芳、

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    Application no:2000-181229  Date applied:2000.6

    Patent/Registration no:3430206  Date registered:2003.5 

    Country of applicant:Domestic  

  12. GaN/AlGaNまたはAlGaN/GaN量子井戸構造の形成方法

    赤﨑勇、天野浩、山口栄雄

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    Application no:2000-039811  Date applied:2000.2

    Patent/Registration no:3833431  Date registered:2006.7 

    Country of applicant:Domestic  

  13. 半導体の製造方法および該方法により製造した半導体素子

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    Application no:231057  Date applied:1999.4

    Patent/Registration no:3294223  Date registered:2002.4 

    Country of applicant:Domestic  

  14. p型III族窒化物半導体の製造方法

    赤﨑勇、天野浩、山口栄雄

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    Application no:288550  Date applied:1998.10

    Patent/Registration no:3883303  Date registered:2006.11 

    Country of applicant:Domestic  

  15. 3族窒化物半導体レーザダイオードの製造方法

    加藤久喜、赤﨑勇、天野浩

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    Application no:080185  Date applied:1998.3

    Patent/Registration no:3905629  Date registered:2007.1 

    Country of applicant:Domestic  

  16. 窒化ガリウム系化合物半導体の結晶成長方法

    小出典克、小池正好、赤﨑勇、天野浩

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    Application no:033178  Date applied:1997.1

    Patent/Registration no:3946805  Date registered:2007.4 

    Country of applicant:Domestic  

  17. 半導体発光素子

    小出典克、小池正好、山崎史郎、赤﨑勇、天野浩

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    Application no:257818  Date applied:1996.9

    Patent/Registration no:3548654  Date registered:2004.4 

    Country of applicant:Domestic  

  18. 3族窒化物半導体レーザダイオードの製造方法

    山崎史郎、永井誠二、小池正好、赤﨑勇、天野浩

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    Application no:207977  Date applied:1996.7

    Patent/Registration no:3670768  Date registered:2005.4 

    Country of applicant:Domestic  

  19. 3族窒化物半導体のドライエッチング方法及び素子

    山崎史郎、永井誠二、小池正好、赤﨑勇、天野浩

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    Application no:202998  Date applied:1996.7

    Patent/Registration no:3529950  Date registered:2004.3 

    Country of applicant:Domestic  

  20. 3 族窒化物半導体の映像方法及び半導体素子

    永井誠二、山崎史郎。小池正好、森茂雄、赤﨑勇、天野浩

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    Application no:025852  Date applied:1996.1

    Patent/Registration no:3712770  Date registered:2005.8 

    Country of applicant:Domestic  

  21. 3族窒化物半導体発光素子及びその製造方法

    佐々 道成、小出典克、柴田直樹、赤﨑勇、天野浩

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    Application no:328011  Date applied:1995.11

    Patent/Registration no:3705637  Date registered:2005.8 

    Country of applicant:Domestic  

  22. 3族窒化物半導体素子

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    Application no:308251  Date applied:1995.10

    Patent/Registration no:3727091  Date registered:2005.10 

    Country of applicant:Domestic  

  23. 発光素子の製造方法

    山崎史郎、永井誠二、赤﨑勇、天野浩

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    Application no:303441  Date applied:1995.10

    Patent/Registration no:3561057  Date registered:2004.6 

    Country of applicant:Domestic  

  24. 3族窒化物半導体素子の製造方法

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    Application no:279906  Date applied:1994.10

    Patent/Registration no:3538628  Date registered:2004.4 

    Country of applicant:Domestic  

  25. 発光素子

    小出典克、柴田直樹、山崎史郎、梅崎潤一、佐々道成、小池正好、赤﨑勇、天野浩

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    Application no:2003-133807  Date applied:1994.7

    Patent/Registration no:4188750  Date registered:2008.9 

    Country of applicant:Domestic  

  26. 発光素子及び製造方法

    小出典克、柴田直樹、山崎史郎、梅崎潤一、佐々道成、小池正好、赤﨑勇、天野浩

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    Application no:2003-133806  Date applied:1994.7

    Patent/Registration no:4188749  Date registered:2008.9 

    Country of applicant:Domestic  

  27. 発光素子

    小出典克、柴田直樹、山崎史郎、梅崎潤一、佐々道成、小池正好、赤﨑勇、天野浩

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    Application no:190069  Date applied:1994.7

    Patent/Registration no:3717196  Date registered:2005.9 

    Country of applicant:Domestic  

  28. 窒素―3族元素化合物半導体発光素子

    真部勝英、小池正宏、加藤久喜、田牧真人、赤﨑勇、天野浩

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    Application no:090209  Date applied:1992.10

    Patent/Registration no:3506874  Date registered:2003.12 

    Country of applicant:Domestic  

  29. 窒化ガリウム系半導体素子及びその製造方法

    竹内哲也、天野浩、赤﨑勇

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    Application no:335255  Date applied:1991.12

    Patent/Registration no:3352712  Date registered:2002.9 

    Country of applicant:Domestic  

  30. 窒化ガリウム系化合物半導体発光素子

    岡崎伸夫、真部勝英、赤﨑勇、天野浩

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    Application no:2002-027143  Date applied:1990.12

    Patent/Registration no:3592300  Date registered:2004.9 

    Country of applicant:Domestic  

  31. 窒化ガリウム系化合物半導体レーザダイオード

    岡崎伸夫、真部勝英、赤﨑勇、天野浩

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    Application no:414843  Date applied:1990.12

    Patent/Registration no:3160914  Date registered:2001.2 

    Country of applicant:Domestic  

  32. 窒化ガリウム系化合物半導体レーザダイオード

    小出 典克、山崎史郎、梅崎潤一、赤﨑勇。天野浩

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    Application no:354571 

    Patent/Registration no:3753747  Date registered:2005.12 

    Country of applicant:Domestic  

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Teaching Experience (On-campus) 18

  1. 量子理論

    2015

  2. 半導体工学

    2015

  3. 電磁気学I

    2015

  4. 半導体工学

    2014

  5. 電磁気学I

    2014

  6. G30講義「自動車のための電子・情報技術」

    2014

  7. 量子理論

    2014

  8. 基礎セミナー

    2014

  9. 半導体工学特論

    2014

  10. 半導体工学

    2013

  11. 電磁気学I

    2013

  12. 基礎セミナー

    2012

  13. 電磁気学I

    2012

  14. 半導体工学

    2012

  15. 半導体工学特論

    2012

  16. 半導体工学

    2011

  17. 量子理論

    2011

  18. Foundations of Electromagnetics I

    2011

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Teaching Experience (Off-campus) 2

  1. 半導体工学

    2010.4 - 2011.3 名城大学)

  2. デジタル電子回路

    2010.4 - 2011.3 名城大学)

 

Social Contribution 13

  1. 浜松・東三河地域イノベーション戦略推進協議会 長期的教育システム研究チーム 顧問

    2016.6

  2. 浜松科学館 名誉館長

    2015.4 - 2017.3

  3. テクノ・フェア2013

    2013.9

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    9月6日テクノ・フェア2013にてパネル展示

  4. 岡崎高校スーパーサイエンススクール 大学研究室体験

    2013.8

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    8/5-8/9 岡崎高校の2名の生徒を研究室で受け入れ、LED、PV、HFETに関する講義とLEDの製造体験を行った

  5. オープンキャンパス2013

    2013.8

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    8月7日に行われたオープンキャンパス2013において、研究室公開を行った。

  6. 名城大学附属高等学校SSH運営指導委員

    2012.4

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    名城大学附属高等学校のSSHに関する指導や運営のサポート

  7. Optics & Photonics International 2012 特別セミナー

    2012.4

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    パシフィコ横浜 2012年4月26日(木)  LT-1コース 9:30-10:55 
    専門家を相手に”窒化物LEDの基礎知識と開発動向”というタイトルで講演を行った。

  8. Electronic Journal 第1062回 Technical Seminar

    2012.3

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     理論効率60%超のInGaN系太陽電池★徹底解説 というタイトルで、企業の若手研究者等を相手にセミナーを行った。

  9. 日本学術振興会第162 委員会 第5回ワイドバンドギャップ半導体スクール

    2011.10

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    光デバイス II  (9) 紫外発光デバイスと題して、全国の大学生及び企業の若手研究者を相手に研修の講師を務めた。

  10. テクノ・フェア名大2011

    2011.9

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    世界を照らすLED と題して、基調講演を行った。

  11. SEMI FORUM Japan2011

    2011.6

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    照明用白色LEDの現状と次世代LED開発と題して、分野外の研究者・技術者に対してセミナーを行った。

  12. 日本学術振興会第162 委員会 第5回ワイドバンドギャップ半導体スクール

    2010.10

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    光デバイス II  (9) 紫外発光デバイスと題して、全国の大学生及び企業の若手研究者を相手に研修の講師を務めた。

  13. 名城大学LED共同研究センター運営委員

    2010.4

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    名城大学LED共同研究センターの運営にかかわる援助

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Media Coverage 21

  1. 産業春秋 Newspaper, magazine

    日刊工業新聞  2022.3

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    Author:Other 

  2. パソコン用充電器2300台を名大に寄贈 Newspaper, magazine

    中日新聞  2022.3

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  3. 日経SDGsフェスinどまんなか「地球規模での課題解決へ イノベーション多彩に提示」 Newspaper, magazine

    日経新聞  2022.1

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  4. 持論「脱炭素時代の半導体に挑戦」 Newspaper, magazine

    日経新聞  2022.1

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  5. WAYS”道を拓く” Internet

    朝日インテック  2021.12

  6. 天野教授「若手に寄り添ってくれた」 Newspaper, magazine

    中日新聞  2021.11

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  7. 青色LEDへの情熱 赤﨑勇さんしのぶ Newspaper, magazine

    朝日新聞  2021.11

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    Author:Other 

  8. 「諦めず新年貫く先生」 Newspaper, magazine

    毎日新聞  2021.11

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    Author:Other 

  9. ド真ん中ジャーナル!ノーベル賞技術が再び世界をかえる!? TV or radio program

    NHK名古屋放送局  2021.10

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    一橋大学イノベーション研究センター  2021.9

  11. 「こども・ニュースの授業」◎暮らし支える半導体 Newspaper, magazine

    時事通信  2021.9

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  12. 社会変える戦略見劣り Newspaper, magazine

    日経新聞  2021.8

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  13. 日の丸半導体、再興への道は 識者インタビュー Newspaper, magazine

    時事通信  2021.6

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  14. 「一人荒野を行く」 Newspaper, magazine

    毎日新聞  2021.6

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    Author:Myself 

  15. For Future先端技術「「脱炭素化へ社会実装加速」 Newspaper, magazine

    日刊工業新聞  2021.6

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  16. 「光でミライを変える」 TV or radio program

    BSテレビ東京  2021.6

  17. 青色LED 荒野を開拓 Newspaper, magazine

    読売新聞  2021.6

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  18. プロジェクト最前線「LED材料で脱炭素革命」 Newspaper, magazine

    日経新聞  2021.6

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