Updated on 2024/03/28

写真a

 
SAKASHITA, Mitsuo
 
Organization
Graduate School of Engineering Materials Physics 1 Assistant Professor
Graduate School
Graduate School of Engineering
Undergraduate School
School of Engineering Physical Science and Engineering
Title
Assistant Professor
Contact information
メールアドレス

Degree 1

  1. 学士(工学) ( 名城大学 ) 

Research Interests 7

  1. Semiconductor

  2. Si

  3. Ge

  4. Sn

  5. SiC

  6. MOS

  7. 絶縁膜

Research Areas 2

  1. Others / Others  / Electronic Device/Electronic Equipment

  2. Others / Others  / Thin Film and Surface Interface Physical Properties

Current Research Project and SDGs 2

  1. ゲート絶縁膜に関する研究

  2. IV族混晶半導体に関する研究

Education 1

  1. Meijo University   Faculty of Science and Engineering

    - 1986

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    Country: Japan

Professional Memberships 2

  1. 電子情報通信学会

  2. 応用物理学会

Committee Memberships 8

  1.   実行委員(総務)  

    2022.10 - 2023.9   

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    Committee type:Academic society

  2.   実行委員  

    2021.10 - 2022.9   

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    Committee type:Academic society

  3.   実行委員(総務)  

    2018 - 2019.9   

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    Committee type:Academic society

  4.   実行委員(総務)  

    2018 - 2019.3   

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    Committee type:Academic society

  5.   実行委員  

    2017 - 2018.9   

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    Committee type:Academic society

  6.   実行委員(会計)  

    2015 - 2016.6   

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    Committee type:Academic society

  7.   実行委員(会計)  

    2015 - 2016.3   

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    Committee type:Academic society

  8.   実行委員  

    2011.3 - 2011.9   

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Awards 1

  1. MNC2004 Award for Outstanding Paper

    2005.10   MNC Organizing Committee  

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    Country:Japan

 

Papers 142

  1. Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method

    Nagano Jotaro, Ikeguchi Shota, Doi Takuma, Sakashita Mitsuo, Nakatsuka Osamu, Shibayama Shigehisa

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 163   2023.8

  2. Self-organized Ge1-x Sn (x) quantum dots formed on insulators and their room temperature photoluminescence

    Hashimoto Kaoru, Shibayama Shigehisa, Asaka Koji, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( 7 )   2023.7

  3. Lattice-matched growth of high-Sn-content (x similar to 0.1) Si1-x Sn x layers on Si1-y Ge y buffers using molecular beam epitaxy

    Fujimoto Kazuaki, Kurosawa Masashi, Shibayama Shigehisa, Sakashita Mitsuo, Nakatsuka Osamu

    APPLIED PHYSICS EXPRESS   Vol. 16 ( 4 )   2023.4

  4. Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing Reviewed

    Kazuya Okada, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, and Masashi Kurosawa

    Mater. Sci. Semicond. Proc.   Vol. 161   page: 107462   2023.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2023.107462

  5. Ge1−xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping Reviewed

    Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka

    Mater. Sci. Semicond. Proc.   Vol. 176   page: 108302   2023

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  6. Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface Reviewed

    Kagoshima E., Takeuchi W., Kutsuki K., Sakashita M., Fujiwara H., Nakatsuka O.

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SC )   2022.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ac528d

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  7. Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray Reviewed

    W. Takeuchi, E. Kagoshima, K. Sumitani, Y. Imai, S. Shibayama, M. Sakashita, S. Kimura, H. Tomita, T. Nishiwaki, H. Fujiwara, and O. Nakatsuka

    Japanese Journal of Applied Physics   Vol. 61   page: SC1072   2022.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ac4c6d

  8. Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs Invited Reviewed

    T. Doi, S. Shibayama, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( 2 ) page: 021007   2022.2

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    DOI: 10.35848/1347-4065/ac4555

  9. Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height

    Doi Takuma, Shibayama Shigehisa, Sakashita Mitsuo, Kojima Kazutoshi, Shimizu Mitsuaki, Nakatsuka Osamu

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 1 )   2022.1

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    Language:Japanese  

    DOI: 10.35848/1882-0786/ac407f

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  10. Photoluminescence properties of heavily Sb doped Ge1-x Sn (x) and heterostructure design favorable for n(+)-Ge1-x Sn (x) active layer

    Zhang Shiyu, Fukuda Masahiro, Jeon Jihee, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SA )   2022.1

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    Language:Japanese  

    DOI: 10.35848/1347-4065/ac25da

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  11. Interface structures and electrical properties of micro-fabricated epitaxial Hf-digermanide/n-Ge(001) contacts Invited Reviewed

    K. Kasahara, K. Senga, M. Sakashita, S. Shibayama, and O. Nakatsuka

    IEEE Journal of the Electron Devices Society     2021.12

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    Language:English  

    DOI: 10.1109/JEDS.2021.3139728

  12. Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion

    Doi Takuma, Shibayama Shigehisa, Sakashita Mitsuo, Shimizu Mitsuaki, Nakatsuka Osamu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 7 )   2021.7

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    Language:Japanese  

    DOI: 10.35848/1347-4065/ac0ab2

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  13. Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO2-ZrO2 System

    Shibayama Shigehisa, Nagano Jotaro, Asaka Koji, Sakashita Mitsuo, Nakatsuka Osamu

    ACS APPLIED ELECTRONIC MATERIALS   Vol. 3 ( 5 ) page: 2203 - 2211   2021.5

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    Language:Japanese  

    DOI: 10.1021/acsaelm.1c00171

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  14. Formation and Characterization of Ge1–x–ySixSny/Ge Heterojunction Structures for Photovoltaic Cell Application Invited Reviewed

    O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima

    ECS Trans.   Vol. 102 ( 4 ) page: 3 - 9   2021.4

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    DOI: 10.1149/10204.0003ecst

  15. Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property

    Kasahara Kentaro, Senga Kazuki, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu

    TWENTIETH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT 2021)     page: 58 - 60   2021

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    Language:Japanese  

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  16. Formation of ultra-thin Ge1-xSnx/Ge1-x-ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode Reviewed

    Suwito Galih Ramadana, Fukuda Masahiro, Suprayoga Edi, Ohtsuka Masahiro, Hasdeo Eddwi Hesky, Nugraha Ahmad Ridwan Tresna, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu

    APPLIED PHYSICS LETTERS   Vol. 117 ( 23 )   2020.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0024905

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  17. Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Invited Reviewed

    O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

    ECS Trans.   Vol. 98 ( 5 ) page: 149 - 156   2020.9

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1149/09805.0149ecst

  18. Impact of byproducts formed on a 4H-SiC surface on interface state density of Al2O3/4H-SiC(0001) gate stacks Reviewed

    Doi Takuma, Shibayama Shigehisa, Takeuchi Wakana, Sakashita Mitsuo, Taoka Noriyuki, Shimizu Mitsuaki, Nakatsuka Osamu

    APPLIED PHYSICS LETTERS   Vol. 116 ( 22 )   2020.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5143574

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  19. Ferroelectric phase formation for undoped ZrO2 thin films by wet O2 annealing Reviewed

    S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka

    Jpn. J. Appl. Phys.   Vol. 59   page: SMMA04-1   2020.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ab80de

  20. Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor Reviewed

    Takeuchi Wakana, Kutsuki Katsuhiro, Kagoshima Eiji, Onishi Toru, Iwasaki Shinya, Sakashita Mitsuo, Fujiwara Hirokazu, Nakatsuka Osamu

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

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    DOI: 10.35848/1347-4065/ab6d85

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  21. Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications Invited Reviewed

    O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima

    ECS Trans. 2019   Vol. 92   page: 41   2019.10

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    DOI: 10.1149/09204.0041ecst

  22. Formation and optoelectronic property of strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures on a boron-ion-implanted Ge(001) substrate Reviewed

    Fukuda Masahiro, Rainko Denis, Sakashita Mitsuo, Kurosawa Masashi, Buca Dan, Nakatsuka Osamu, Zaima Shigeaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.8

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    DOI: 10.7567/1347-4065/ab1b62

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  23. Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process Reviewed

    K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa

    Applied Physics Express   Vol. 12   page: 051016   2019.5

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    DOI: 10.7567/1882-0786/ab1969

  24. Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment (vol 58, SBBD05, 2019) Reviewed

    Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.4

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    DOI: 10.7567/1347-4065/ab0f24

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  25. Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment Reviewed

    T. Doi, W. Takeuchi, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 58   page: SBBD05   2019.2

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    DOI: 10.7567/1347-4065/aafb54

  26. Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2

    Senga Kazuki, Shibayama Shigehisa, Sakashita Mitsuo, Zaima Shigeaki, Nakatsuka Osamu

    2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)     page: .   2019

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  27. Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny Quantum Well Structures

    Suwito Galih Ramadana, Fukuda Masahiro, Shibayama Shigehisa, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)     page: .   2019

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  28. Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination Reviewed

    M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 58   page: SAAS02   2018.11

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    DOI: 10.7567/1347-4065/aaeb36

  29. Optoelectronic properties of high-Si-content-Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructure Reviewed

    M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima

    Semicond. Sci. Tech.   Vol. 33 ( 12 ) page: 124018   2018.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/aaebb5

  30. A New Application of Ge1-xSnx: Thermoelectric Materials Invited Reviewed

    M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

    ECS Trans. 2018   Vol. 86 ( 7 ) page: 321-328   2018.10

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    DOI: 10.1149/08607.0321ecst

  31. Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1-x-ySny ternary alloy interlayer on Ge Reviewed

    Suzuki Akihiro, Nakatsuka Osamu, Sakashita Mitsuo, Zaima Shigeaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.060304

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  32. Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water Reviewed

    Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.04FJ02

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  33. High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water Reviewed

    Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

    APPLIED PHYSICS LETTERS   Vol. 112 ( 6 )   2018.2

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    DOI: 10.1063/1.4997369

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  34. Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor Reviewed

    Takeuchi Wakana, Yamamoto Kensaku, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Sigeaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 1 )   2018.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.01AE06

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  35. Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator

    Takahashi Kouta, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki, Kurosawa Masashi

    2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018)     page: 313 - 315   2018

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  36. Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1-xSnx and Sn interlayers Reviewed

    Suzuki Akihiro, Nakatsuka Osamu, Sakashita Mitsuo, Zaima Shigeaki

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 70   page: 162-166   2017.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2016.12.028

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  37. Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate Reviewed

    Yoshikawa Isao, Kurosawa Masashi, Takeuchi Wakana, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 70   page: 151-155   2017.11

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    DOI: 10.1016/j.mssp.2016.12.038

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  38. Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures Reviewed

    Fukuda Masahiro, Watanabe Kazuhiro, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 32 ( 10 )   2017.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/aa80ce

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  39. Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effects on crystalline quality and photoluminescence property

    Nakatsuka Osamu, Fujinami Shunsuke, Asano Takanori, Koyama Takeshi, Kurosawa Masashi, Sakashita Mitsuo, Kishida Hideo, Zaima Shigeaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

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    DOI: 10.7567/JJAP.56.01AB05

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  40. Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties

    Yano Shota, Yamaha Takashi, Shimura Yosuke, Takeuchi Wakana, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

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    DOI: 10.7567/JJAP.56.01AB02

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  41. Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effects on crystalline quality and photoluminescence property Reviewed

    O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 56   page: 01AB05   2016.12

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  42. Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties Reviewed

    S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 56   page: 01AB02   2016.11

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  43. Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys Reviewed

    Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 55   page: 08PE04   2016.7

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  44. Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack

    M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 55   page: 08PC05   2016.6

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  45. Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価

    金田裕一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    信学技報 IEICE Technical Report     page: 37   2016.6

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  46. Sn系IV族半導体混晶薄膜の成長と物性評価

    志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明

    信学技報 IEICE Technical Report   Vol. 116   page: 23   2016.4

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  47. Effects of nitridation for SiO2/SiC interface on defect properties near the conduction band edge

    W. Takeuchi, K. Yamamoto, N. Taoka, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 55   page: 04ER13   2016.3

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  48. Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer

    J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 55   page: 04ER13   2016.3

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  49. Growth of ultrahigh-Sn-content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact

    A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 55   page: 04EB12   2016.3

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  50. Experimental observation of type-I energy band alignment in lattice-matched Ge1-x-ySixSny/Ge heterostructures

    T. Yamaha, S. Shibayama, T. Asano, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima

    Appl. Phys. Lett.   Vol. 108   page: 061909   2016.2

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  51. Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima

    Appl. Phys. Lett.   Vol. 108   page: 052104   2016.2

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  52. 原子層堆積法を用いたGeO2/Ge界面形成および欠陥の堆積温度依存性

    兼松正行, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告     page: 5   2016.1

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  53. 界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長

    吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告     page: 21   2016.1

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  54. Characterization of Shallow-and Deep-Level Defects in Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements

    W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima

    ECS Journal of Solid State Science and Technology   Vol. 5   page: 3082   2016.1

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  55. Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators

    T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

    Transactions of the Materials Research Society of Japan   Vol. 40   page: 351   2015.12

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  56. Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer

    A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

    Appl. Phys. Lett.   Vol. 107   page: 212103   2015.11

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  57. Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits

    S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita

    ECS Trans. 2015   Vol. 69   page: 89   2015.10

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  58. Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures

    K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima

    Appl. Phys. Lett.   Vol. 107   page: 102102   2015.9

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  59. Epitaxial formation of Ni germanide on Ge(0 0 1) substrate by reactive deposition

    Y. Deng, O. Nakatsuka, A. Suzuki, M. Sakashita, S, Zaima

    Solid-State Electronics   Vol. 110   page: 44   2015.8

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  60. Growth and applications of GeSn-related group-IV semiconductor materials Reviewed

    S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi and M. Sakashita

    Science and Technology of Advanced Materials   Vol. 16   page: 043502   2015.7

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  61. High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization Reviewed

    W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

    Appl. Phys. Lett.   Vol. 107   page: 022103   2015.7

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    DOI: 10.1063/1.4926507

  62. SiO2/SiC MOS界面の欠陥特性に酸窒化処理が与える影響

    竹内和歌奈, 山本建策, 坂下満男, 金村髙司, 中塚理, 財満鎭明

    信学技報 IEICE Technical Report   Vol. 115   page: 27   2015.6

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  63. 金属/Ge界面への超高Sn組成SnxGe1-x層導入による界面電気伝導特性の制御

    鈴木陽洋, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    信学技報 IEICE Technical Report   Vol. 115   page: 57   2015.6

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  64. Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果

    浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    信学技報 IEICE Technical Report   Vol. 115   page: 63   2015.6

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  65. 高Sn組成SiSnの形成とバンド構造 -直接遷移構造化を目指して-

    黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    信学技報 IEICE Technical Report   Vol. 115   page: 35   2015.4

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  66. Influence of interface structure on electrical properties of NiGe/Ge contacts Reviewed

    Y. Deng, O. Nakatsuka, M. Sakashita and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 54   page: 05EA01   2015.4

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    DOI: 10.7567/JJAP.54.05EA01

  67. Impact of hydrogen surfactant on crystallinity of Ge1-xSnx epitaxial layers Reviewed

    T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 54   page: 04DH15   2015.3

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    DOI: 10.7567/JJAP.54.04DH15

  68. Formation of chemically stable GeO2 on the Ge surface with pulsed metal-organic chemical vapor deposition Reviewed

    S. Shibayama, T. Yoshida, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    Appl. Phys. Lett.   Vol. 106   page: 062107   2015.2

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    DOI: 10.1063/1.4908066

  69. Sn/Geコンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減

    鈴木陽洋, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」第20回記念研究会研究報告     page: 59   2015.1

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  70. GeO2薄膜の正方晶形成による化学的安定性の向上

    柴山茂久, 吉田鉄兵, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

    応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」第20回記念研究会研究報告     page: 185   2015.1

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  71. Challenges and Developments in GeSn Process Technology for Si Nanoelectronics Invited Reviewed

    S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita

    ECS Trans. 2014   Vol. 64   page: 147   2014.10

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    DOI: 10.1149/06406.0147ecst

  72. Formation of high-quality oxide/Ge1-xSnx interface with high surface Sn content by controlling Sn migration Reviewed

    K. Kato, N. Taoka, T. Asano, T. Yoshida, M. Sakashita, O. Nakatsuka, and S. Zaima

    Appl. Phys. Lett.   Vol. 105   page: 122103   2014.9

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    DOI: 10.1063/1.4896146

  73. Robustness of Sn precipitation during thermal oxidation of Ge1-xSnx on Ge(001) Reviewed

    K. Kato, T. Asano, N. Taoka, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima

    Jpn. J. Appl. Phys.   Vol. 53   page: 08LD04   2014.7

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  74. Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces Reviewed

    S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 53   page: 08LD02   2014.7

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  75. Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition Reviewed

    T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 53   page: 08LD03   2014.7

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  76. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate Reviewed

    N. Taoka, M. Fukudome, W. Takeuchi, T. Arahira, M. Sakashita, O. Nakatsuka, and S. Zaima

    J. Appl. Phys.   Vol. 115   page: 173102   2014.5

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    DOI: 10.1063/1.4874800

  77. Importance of control of oxidant partial pressure on structural and electrical properties of Pr-oxide films Reviewed

    K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

    Thin Solid Films   Vol. 557   page: 276   2014.4

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  78. Stabilized formation of tetragonal ZrO2 thin film with high permittivity Reviewed

    K. Kato, T. Saito, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

    Thin Solid Films   Vol. 557   page: 192   2014.4

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  79. Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties Reviewed

    S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

    Thin Solid Films   Vol. 557   page: 282   2014.4

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  80. Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode Reviewed

    A. Suzuki, S. Asaba, J. Yokoi, K. Kato, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, S. Zaima

    Jpn. J. Appl. Phys.   Vol. 53   page: 04EA06   2014.3

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  81. Defects Induced by Reactive Ion Etching in Ge Substrate Reviewed

    Kusumandari, N.taoka, W. takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

    Advanced Materials Research   Vol. 896   page: 241   2014.2

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  82. 低界面準位密度を有するGe MOS構造を実現するGe表面の酸化条件 Reviewed

    柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

    応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会     page: 16   2014.1

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  83. Al2O3/SiC MOS構造における伝導帯端近傍の電気特性 Reviewed

    田岡紀之, 坂下満男, 中塚理, 財満鎭明

    応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会     page: 205   2014.1

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  84. MOCVD法により形成した極薄GeO2を用いたAl2O3/GeOx/Ge構造の電気的特性および構造評価 Reviewed

    吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明

    応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会     page: 131   2014.1

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  85. 固溶限を超えるSn組成を有するGe1-xSnx層中におけるSn原子の熱安定性 Reviewed

    加藤公彦, 浅野孝典, 田岡紀之, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会     page: 37   2014.1

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  86. n型Ge単結晶中におけるSnと空孔関連欠陥との相互作用 Reviewed

    竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明

    信学技報(電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス)   Vol. 114   page: 113   2014

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  87. 絶縁膜上におけるIV族半導体多結晶薄膜の低温形成 ~ 低融点Snの活用 ~ Reviewed

    黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

    信学技報(電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス)   Vol. 114   page: 91   2014

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  88. Sn/Geコンタクトにおけるフェルミレベルピニング現象の軽減 Reviewed

    鈴木陽洋, 朝羽俊介, 横井淳, 中塚理, 黒澤昌志, 加藤公彦, 坂下満男, 田岡紀之, 財満鎭明

    信学技報(電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス)   Vol. 114   page: 11   2014

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  89. Heteroepitaxial Growth of Sn-Related Group-IV Materials On Si Platform for Microelectronic and Optoelectronic Invited Reviewed

    O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita and S. Zaima

    ECS Trans. 2013   Vol. 58   page: 149   2013.10

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  90. Reduction of Interface States Density due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface Reviewed

    S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima

    ECS Trans. 2013   Vol. 58   page: 301   2013.10

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  91. Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer Reviewed

    M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao and S. Zaima

    M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao and S. Zaima   Vol. 103   page: 101904   2013.9

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  92. Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge Reviewed

    S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima

    Appl. Phys. Lett.   Vol. 103   page: 082114   2013.8

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  93. Broad defect depth distribution in germanium substrates induced by CF4 plasma Reviewed

    Kusumandari, N. Taoka, W. Takeuchi, M. Fukudome, M. Sakashita, O. Nakatsuka and S. Zaima

    Appl. Phys. Lett.   Vol. 103   page: 033511   2013.7

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  94. Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響 Reviewed

    加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

    ゲートスタック研究会 ─材料・プロセス・評価の物理─     page: 155-158   2013.1

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  95. Al2O3/Ge構造に対する熱酸化機構の解明 Reviewed

    柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

    ゲートスタック研究会 ─材料・プロセス・評価の物理─     page: 39-42   2013.1

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  96. テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成 Reviewed

    吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

    ゲートスタック研究会 ─材料・プロセス・評価の物理─     page: 151-154   2013.1

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  97. Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures Reviewed

    Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 52   page: 01AC04   2013

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  98. Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Reviewed

    K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

    J. Phys.: Conf. Ser.   Vol. 417   page: 012001   2013

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  99. Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure Reviewed

    K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    Solid-State Electron   Vol. 83   page: 56   2013

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  100. Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical Reviewed

    K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 52   page: 04CA08   2013

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  101. ラジカルプロセスによるAl2O3/Ge界面特性の改善

    加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    特別研究会研究報告“ゲートスタック研究会     page: 125-128   2012.1

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  102. Al2O3/Geに対する酸素熱処理が電気的特性および化学結合状態に与える効果

    柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

    特別研究会研究報告“ゲートスタック研究会     page: 129-132   2012.1

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  103. Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation Reviewed

    Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 51   page: 01AJ01   2012

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  104. Improvement of Al2O3/Ge interfacial properties by O2-annealing Reviewed

    S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

    Thin Solid Films   Vol. 520   page: 3397   2012

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  105. 電流検出型原子間力顕微鏡を用いた欠陥に起因するPr酸化膜のリーク電流機構の解明 Reviewed

    足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-     page: 123-126   2011.1

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  106. Pr酸化膜/Si構造へのAl導入による界面反応抑制効果 Reviewed

    古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-     page: 51-54   2011.1

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  107. Al2O3界面層およびラジカル窒化法によるHigh-k/Ge界面構造および電気的特性の制御 Reviewed

    加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-     page: 55-58   2011.1

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  108. Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響 Reviewed

    加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-     page: 99-102   2011.1

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  109. Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy Reviewed

    M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 50   page: 04DA08   2011

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  110. Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure Reviewed

    K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 50   page: 04DA17   2011

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  111. 原子層堆積法により形成したPrAlOの結晶構造および電気的特性

    古田和也、竹内和歌奈、坂下満男、近藤博基、中塚理、財満鎭明

    ゲートスタック技術の進展 -新構造・新材料を中心に-     page: 39-42   2010.6

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  112. 1.2 nm-SiONゲート絶縁膜における局所劣化現象の電流検出型原子間力顕微鏡を用いたナノスケール観察

    加藤雄三, 平安座朝誠, 坂下満男, 近藤博基, 財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-     page: 105-108   2010.1

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  113. Pr(EtCp)3を用いたPr酸化膜の原子層堆積とその結晶構造及び電気的特性

    古田和也, 松井裕高, 近藤博基, 坂下満男, 財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-     page: 125-128   2010.1

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  114. ALD-Pr酸化膜/Ge3N4/Ge構造における界面構造と電気的特性

    加藤公彦, 近藤博基, 坂下満男, 財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-     page: 121-124   2010.1

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  115. *Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor Reviewed

    H. Kondo, S. Sakurai, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

    Appl. Phys. Lett.   Vol. 95   page: 012105   2010

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  116. *Formation of Pr Oxide Films by Atomic Layer Deposition Using Pr(EtCp)3 precursor Reviewed

    H. Kondo, H. Matsui, K. Furuta, M. Sakashita, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 49   page: 04DA14   2010

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  117. *Formation Processes of Ge3N4 Films by Radical Nitridation and Their Electrical Properties Reviewed

    K. Kato, H. Kondo, , M. Sakashita, and S. Zaima

    Thin Solid Films   Vol. 518   2010

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  118. アモルファスTi-Si-N MOSゲート電極の熱的安定性およびスケーラビリティ

    宮本和明,古米孝平,近藤博基,坂下満男,財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-     page: 89-92   2009.1

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  119. アモルファスTi-Si-NおよびHf-Si-N MOSゲート電極の結晶構造と抵抗率の窒素濃度依存性

    近藤博基,宮本和明,古米孝平,坂下満男,財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-     page: 191-194   2009.1

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  120. Al2O3界面層挿入によるLaAlO3/Ge 界面制御効果

    加藤亮祐,京極真也,坂下満男,近藤博基,財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-     page: 133-136   2009.1

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  121. Pr(EtCp)3を用いたMOCVD法によるPr酸化膜の作製およびその電気的特性の評価

    松井裕高,櫻井晋也,近藤博基,坂下満男,財満鎭明

    ゲートスタック研究会 -材料・プロセス・評価の物理-     page: 125-128   2009.1

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  122. Thermal Stability and Scalability of Mictamict Ti–Si–N Metal–Oxide–Semiconductor Gate Electrodes Reviewed

    H. Kondo, K. Furumai, M. Sakashita, A. Sakai, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 48   page: 04C012-1-5   2009

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  123. Pt(EtCp)3を用いた原子層堆積法によるPr酸化膜の形成

    近藤博基, 古田和也, 松井裕高, 坂下満男, 財満鎭明

    信学技報   Vol. 109   page: 81-85   2009

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  124. LaAlO/Ge構造へのALD-Al2O3界面制御層挿入の効果

    坂下満男, 加藤亮祐, 京極真也, 近藤博基, 財満鎭明

    信学技報   Vol. 109   page: 61-66   2009

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  125. ラジカル窒化法によるHigh-k/Ge界面構造制御

    加藤公彦, 近藤博基, 坂下満男, 財満鎭明

    信学技報   Vol. 109   page: 39-44   2009

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  126. Effects of Atomic Layer Deposition-Al2O3 Interface Layers on Interfacial Properties of Ge Metal–Oxide–Semiconductor Capacitors Reviewed

    R. Kato, S. Kyogoku, M. Sakashita, H. Kondo, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 48   page: 05DA04-1-4   2009

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  127. Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors Reviewed

    K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa and S. Zaima

    Jpn. J. Appl. Phys   Vol. 47 ( 4 ) page: 2420-2424   2008

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  128. Silicide and germanide technology for contacts and gates in MOSFET applications Reviewed

    S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa

      Vol. 517   page: 80-83   2008

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  129. Behavior of Local Charge Trapping Sites in La2O3-Al2O3 Composite Films under Constant Voltage Stress Reviewed

    T. Sago, A. Seko, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

    Jpn. J. Appl. Phys   Vol. 46 ( 4B ) page: 1879-1884   2007

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  130. Ge基板上へのPr酸化膜の作製と評価

    坂下満男、鬼頭伸幸、酒井 朗、小川正毅、財満鎭明

    信学技報   Vol. 107 ( 85 ) page: 107-111   2007

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  131. Composition Dependence of Work Function in Metal (Ni,Pt) Germanide Gate Electrodes Reviewed

    D. Ikeno, Y. Kaneko, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 46 ( 4B ) page: 1865-1869   2007

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  132. Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition Reviewed

    K. Ariyoshi, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 45   page: 2903-2907   2006

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    Pr silicate films without interfacial layers were formed by pulsed laser deposition and high-temperature postdeposition annealing (PDA) and were evaluated in terms of structures and electrical properties. In the fabrication processes, film thickness and ambient gases during deposition were controlled. In some films, crystallization of Pr silicate was observed by transmission electron microscopy and it was found that tetragonal Pr2Si2O7 was epitaxially grown on Si(001) substrates. By deposition in Ar, Pr silicate with a small capacitance equivalent oxide thickness and a low leakage current density was obtained.

  133. 電流検出型原子間力顕微鏡を用いた極薄ゲート絶縁膜の信頼性評価

    世古明義, 坂下満男, 酒井朗, 財満鎭明

    日本信頼性学会誌「信頼性」   Vol. 28 ( 3 ) page: 163-174   2006

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  134. La2O3-Al2O3複合膜における定電圧ストレス印加時の局所的な電荷捕獲とその放出過程 Reviewed

    佐合寿文, 世古明義, 坂下満男, 酒井朗, 小川正毅, 財満鎭明

    信学技報   Vol. 106   page: 19   2006

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  135. Characterization of Local Current Leakage in La2O3-Al2O3 Composite Films by Conductive Atomic Force Microscopy Reviewed

    A. Seko, T. Sago, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 45   page: 2954-2960   2006

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  136. Thermal Stability and Electrical Properties of (La2O3)1-x(Al2O3)x Composite Films Reviewed

    R. Fujitsuka, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, and Y. Yasuda

    Jpn. J. Appl. Phys.   Vol. 44   page: 2428-2432   2005

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  137. 電流検出型原子間力顕微鏡を用いたLa2O3-Al2O3複合膜の局所リーク電流評価 Reviewed

    世古明義, 佐合寿文, 藤塚良太, 坂下満男, 酒井朗, 小川正毅, 財満鎭明

    信学技報   Vol. 104   page: 35   2005

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  138. Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals Reviewed

    S. Naito, T. Ueyama, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

    Jpn. J. Appl. Phys.   Vol. 44   page: 5687-5691   2005

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  139. Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO2-TiO2 Composite Films Reviewed

    K. Honda, A. Sakai, M. Sakashita, H. Ikeda, S. Zaima, and Y. Yasuda

    Jpn. J. Appl. Phys.   Vol. 43   page: 1571-1576   2004

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  140. Praseodymium silicate formed by postdeposition high-temperature annealing Reviewed

    A. Sakai, S. Sakashita, M. Sakashita, Y. Yasuda, S. Zaima, and S. Miyazaki

    Appl. Phys. Lett.   Vol. 85   page: 5322-5324   2004

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    Pr silicate has been synthesized by molecular-beam deposition of Pr2O3 layers on Si(111) substrates and subsequent high-temperature postdeposition annealing at 1000 °C. This thermal treatment drastically changes the film texture from the crystalline Pr2O3 epitaxially grown on Si, into Pr silicate with completely amorphized structures, resulting from intermixing of Si from the substrate. A typical dielectric constant and a leakage current density of Pr silicate grown under an optimal condition were, respectively, 19.7 and 3×10–9 A cm–2 at +1 V relative to the flatband voltage for an equivalent oxide thickness of 1.9 nm. Using x-ray photoelectron spectroscopy, a valence-band offset at the Pr-silicate/Si(111) interface of 2.75 eV and a band gap of 6.50 eV were obtained. The large band gap and the highly symmetric band alignment account for the observed low leakage current density.

  141. HfO2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic Reviewed

    R. Takahashi, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda

    Jpn. J. Appl. Phys.   Vol. 43   page: 7821-7825   2004

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  142. Growth of silicon nanocrystal dots with high number density by ultra-high vacuum chemical vapor deposition Reviewed

    S. Naito, M. Satake, H. Kondo, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda

    Jpn. J. Appl. Phys.   Vol. 43   page: 3779-3783   2004

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Presentations 177

  1. A new challenge in group-IV materials: energy harvesting application & 2D crystal synthesizing Invited International conference

    Masashi Kurosawa, Akio Ohta, Masaaki Araidai, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka

    14th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.12.14 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Sendai  

  2. Thermoelectric properties of Sb-doped Ge1-x-ySixSny ternary alloy layers lattice matched to GaAs substrates International conference

    Itsuki Sugimura, Masaya Nakata, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Takayoshi Katase, and Masashi Kurosawa

    14th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.12.14 

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    Event date: 2023.12

    Language:English   Presentation type:Poster presentation  

    Venue:Sendai  

  3. Electrical activation of implanted phosphorus in GeSn epitaxial layers grown on Si(111) substrate International conference

    Yoshiki Kato, Masahiro Fukuda, Shigehisa Shibayama, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka

    14th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.12.15 

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    Event date: 2023.12

    Language:English   Presentation type:Poster presentation  

    Venue:Sendai  

  4. Crystal Growth Technology of GeSn-related Group-IV Heteroepitaxial Layers Invited International conference

    Osamu Nakatsuka, Shigehisa Shibayama, Masashi Kurosawa, and Mitsuo Sakashita

    3rd Nucleation and Growth Research Conference (NGRC)  2023.11.10 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kyoto  

  5. Sputtering Heteroepitaxy of Ge0.75Sn0.25 Layer on InP(001) Substrate International conference

    Taichi Kabeya, Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka

    2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY  2023.10.25 

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    Event date: 2023.10

    Language:English   Presentation type:Oral presentation (general)  

  6. Epitaxial Growth Technique for Si1-xSnx Binary Alloy Thin Films Invited International conference

    Masashi Kurosawa, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka

    244th ECS Meeting  2023.10.10 

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    Event date: 2023.10

    Language:English   Presentation type:Oral presentation (invited, special)  

  7. Seed-layer driven solid phase epitaxy of amorphous Ge1-xSnx layers on Si(001) substrates toward in-plane strain control International conference

    Tatsuma Hiraide, Masashi Kurosawa, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka

    2023 International Conference on Solid State Devices and Materials  2023.9.7 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya  

  8. Experimental observation of negative differential resistance in GeSn/GeSiSn double barrier structure toward resonant tunneling diode applications International conference

    Shuto Ishimoto, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, and Shigehisa Shibayama

    2023 International Conference on Solid State Devices and Materials  2023.9.7 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

  9. Optoelectronic properties of Ge1−xSnx/high-Si-content SiyGe1−y− zSnz double quantum wells formed by low-temperature MBE growth and post deposition annealing International conference

    Shigehisa Shibayama, Shiyu Zhang, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka

    2023 International Conference on Solid State Devices and Materials  2023.9.7 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya  

  10. Low-temperature thermoelectric power-factor enhancement of n-type Ge-rich Ge1-x-ySixSny layers International conference

    Itsuki Sugimura, Masaya Nakata, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Takayoshi Katase, and Masashi Kurosawa

    2023 International Conference on Solid State Devices and Materials  2023.9.7 

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    Event date: 2023.9

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya  

  11. Giant thermoelectric power of n-type Si1-xSnx layers grown on FZ-Si(001) substrates International conference

    Tatsuki Oiwa, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Takayoshi Katase, and Masashi Kurosawa

    2023 International Conference on Solid State Devices and Materials  2023.9.7 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya  

  12. Heteroepitaxial Growth of High Substitutional Sn-content Ge1−xSnx Layer Lattice-matched on InP Substrate International conference

    Osamu Nakatsuka, Komei Takagi, Shigehisa Shibayama, Masashi Kurosawa, and Mitsuo Sakashita

    The International Conference on Silicon Epitaxy and Heterostructures and the International SiGe Technology and Device Meetings  2023.5.22 

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    Event date: 2023.5

    Language:English   Presentation type:Poster presentation  

    Venue:Como  

  13. Low-temperature Thermoelectric Properties of GeSn Alloys Films

    M. Kurosawa, T. Katase, Y. Imai, M. Nakata, M. Kimura, T. Kamiya, S. Shibayama, M. Sakashita, and O. Nakatsuka

    The International Conference on Silicon Epitaxy and Heterostructures and the International SiGe Technology and Device Meetings  2023.5.22 

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    Event date: 2023.5

    Language:English   Presentation type:Poster presentation  

  14. Epitaxy and heterostructure of germanium tin-related group-IV alloy semiconductors for future electronic and optoelectronic applications Invited International conference

    Osamu Nakatsuka, Masashi Kurosawa, Shigehisa Shibayama, and Mitsuo Sakashita

    2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors  2023.5.15 

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    Event date: 2023.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Otaru  

  15. Potential of Silicon-Germanium-Tin Thin Films for Future Thermoelectric Device Applications Invited International conference

    M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka

    15th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 16th International Conference on Plasma-Nano Technology and Science (ISPlasma 2023 / IC-PLANTS 2023)  2023.3.8 

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    Event date: 2023.3

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Gifu   Country:Japan  

  16. Challenge and new opportunity of Ge1-x-ySixSny/Ge1-xSnx heterostructures for optoelectronic and electronic device applications Invited International conference

    S. Shibayama, S. Zhang, M. Sakashita, M. Kurosawa, and O. Nakatsuka

    13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1.24 

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    Event date: 2023.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Sendai   Country:Japan  

  17. Arising ferroelectric properties in ZrO2 thin film down to 4 nm International conference

    S. Ikeguchi, J. Nagano, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Shibayama

    13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1.23 

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    Event date: 2023.1

    Language:English   Presentation type:Poster presentation  

    Venue:Sendai   Country:Japan  

  18. Development of accurate characterization technique of electrical properties in Ge1-xSnx-based group-IV epitaxial layers International conference

    T. Mori, S. Shibayama, K. Nishizawa, M. Sakashita, M. Kurosawa, and O. Nakatsuka

    13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1.23 

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    Event date: 2023.1

    Language:English   Presentation type:Poster presentation  

    Venue:Sendai   Country:Japan  

  19. Crystalline and electrical properties of Ge1-x-ySixSny epitaxial layers - Effect of Si incorporation and H2 irradiation International conference

    K. Nishizawa, S. Shibayama, T. Mori, M. Sakashita, M. Kurosawa, and O. Nakatsuka

    13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1.24 

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    Event date: 2023.1

    Language:English   Presentation type:Poster presentation  

    Venue:Sendai   Country:Japan  

  20. Heteroepitaxy of Ge1-xSnx with a high Sn content over 25% on InP(001) toward group-IV infrared detector International conference

    K. Takagi, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka

    13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1.23 

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    Event date: 2023.1

    Language:English   Presentation type:Poster presentation  

    Venue:Sendai   Country:Japan  

  21. Epitaxial Germanide/Germanium Contact: Its Impact on Schottky Barrier Height Invited International conference

    O. Nakatsuka, S. Shibayama, M. Sakashita, and M. Kurosawa

    13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1.23 

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    Event date: 2023.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Sendai   Country:Japan  

  22. Research and Development of GeSn-related Group-IV Semiconductor Heterostructures for Optoelectronic Applications Invited International conference

    O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

    Symposium on Light Emission and Photonics of Group IV Semiconductor Nanostructures (LPGN)  2022.12.14 

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    Event date: 2022.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Nagoya   Country:Japan  

  23. Synthesis of multilayer two-dimensional group-IV flakes and nanosheets International conference

    M. Kurosawa, M. Itoh, Y. Ito, K. Okada, A. Ohta, M. Araidai, Kosuke O. Hara, Y. Ando, S. Yamada, S. Shibayama, M. Sakashita, and O. Nakatsuka

    the 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33)  2022.11.15 

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    Event date: 2022.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  24. Impact of Strain Structure in Epitaxial HfGe2/n-Ge(001) Contact on Morphology and Schottky Barrier Height International conference

    O. Nakatsuka, Kentaro Kasahara, S. Shibayama, M. Sakashita, and M. Kurosawa

    Advanced Metallization Conference 2022 31st Asian Session (ADMETA Plus 2022)  2022.10 

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    Event date: 2022.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The University of Tokyo   Country:Japan  

  25. Study on doping by ion implantation to Si1-xSnx epitaxial layers International conference

    T. Oiwa, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka

    2022 International Conference on Solid State Devices and Materials (SSDM 2022)  2022.9 

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    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari messe   Country:Japan  

  26. Molecular beam epitaxy of Si1-xSnx layers with 10%-Sn content on Si1-yGey buffers International conference

    K. Fujimoto, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka

    2022 International Conference on Solid State Devices and Materials (SSDM 2022)  2022.9 

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    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari messe   Country:Japan  

  27. Formation of ferroelectric ZrO2 film in ultra-thin region by sputtering method International conference

    S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka

    2022 International Conference on Solid State Devices and Materials (SSDM 2022)  2022.9 

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    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari messe   Country:Japan  

  28. Substrate engineering for strain-controlled high-Sn-content Ge1-xSnx epitaxy International conference

    O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

    The 6th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2022 (APAC-Silicide 2022)  2022.7 

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    Event date: 2022.7 - 2022.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  29. Enhancement of the Field-Effect Mobility of 4H-SiC Buried Channel n-MOSFETs by Using Al2O3 as a Gate Insulator International conference

    T. Doi, S. Shibayama, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka

    2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2021 IWDTF) 

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    Event date: 2021.11

    Language:English  

  30. Optoelectronic properties of pseudo-direct transition n+-Ge1-xSnx and heterostructures composed of n+-Ge1-xSnx and n-SiyGe1-y International conference

    S. Zhang, M. Sakashita, S. Shibayama, and O. Nakatsuka

    International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021) 

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    Event date: 2021.11

    Language:English  

  31. Schottky barrier height lowering for metal/n-type 4H-SiC contacts using low work function metals International conference

    T. Doi, S. Shibayama, M. Sakashita, M. Shimizu, and O. Nakatsuka

    International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021) 

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    Event date: 2021.11

  32. Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface International conference

    E. Kagoshima, W. Takeuchi, K. Kutsuki, M. Sakashita, H. Fujiwara, and O. Nakatsuka

    2021 International Conference on Solid State Devices and Materials (SSDM 2021) 

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    Event date: 2021.9

    Language:English  

  33. Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property Invited International conference

    K. Kasahara, K. Senga, M. Sakashita, S. Shibayama, and O. Nakatsuka

    20th International Workshop on Junction Technology 2021 (IWJT2021) 

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    Event date: 2021.6

    Language:English  

  34. Formation and Characterization of Ge1–x–ySixSny/Ge Heterojunction Structures for Photovoltaic Cell Application International conference

    O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima

    ECS Meeting 

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    Event date: 2021.5 - 2021.6

    Language:English  

  35. Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Invited International conference

    O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

    ECS Meeting 

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    Event date: 2020.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  36. Understanding wet annealing effect on phase transition and ferroelectric phase formation for Hf1-xZrxO2 film International conference

    S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka

    SSDM2020  2020.9.28 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  37. In-situ Sb Doping into Ge1−xSnx Epitaxial Layer toward Enhancement of Photoluminescence Intensity International conference

    M. Fukuda, J. Jeon, M. Sakashita, S. Shibayama, M. Kurosawa, and O. Nakatsuka

    ISCSI-VIII 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  38. Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices Invited International conference

    O. Nakatsuka, M. Kurosawa, S. Shibayama, M. Sakashita and S. Zaima

    ISCSI-VIII 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  39. Ferroelectric Phase Evolution of Undoped ZrO2 Thin Film by Wet O2 Annealing Process International conference

    S. Shibayama, J. Nagano, M. Sakashita, O. Nakatsuka

    IWDTF 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  40. Development of in-situ cyclic metal layer oxidation to form abrupt Al2O3/4H-SiC interface International conference

    T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu and O. Nakatsuka

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  41. Optoelectronic Property of GeSn and GeSiSn Heterostructure International conference

    M. Fukuda, M. Sakashita, S. Shibayama, M. Kurosawa, S. Zaima, and O. Nakatsuka

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  42. Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET International conference

    W. Takeuchi, K. Kutsuki, E. Kagoshima, T. Onishi, S. Iwasaki, M. Sakashita, H. Fujiwara, and O. Nakatsuka

    SSDM 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  43. In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al2O3/4H-SiC(0001) Gate Stacks International conference

    T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka

    SSDM 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  44. GeSn and GeSiSn Heterostructures for Optoelectronic Applications Invited International conference

    O. Nakatsuka, M. Fukuda, M. Kurosawa, S. Shibayama, M. Sakashita, and S. Zaima

    2019 IEEE Photonics Society Summer Topicals Meeting Series 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Florida   Country:United States  

  45. Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 International conference

    K. Senga, S. Shibayama, M. Sakashita, S. Zaima, and O. Nakatsuka

    19th International Workshop on Junction Technology 2019 (IWJT2019) 

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    Event date: 2019.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto   Country:Japan  

  46. Development and challenges of group-IV alloy semiconductors for nanoelectronic applications Invited International conference

    S. Zaima, O. Nakatsuka, M. Kurosawa, M. Sakashita, and S. Shibayama

    The Eleventh International Conference on High-Performance Ceramics (CICC-11) 

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    Event date: 2019.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kunming   Country:China  

  47. Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny QuantumWell Structures International conference

    G. R. Suwito, M. Fukuda, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

    Compoud Semiconductor Week 2019 (CSW 2019) 

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    Event date: 2019.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nara   Country:Japan  

  48. GeSn-related group-IV semiconductor heterostructures for electronic and optoelectronic applications Invited International conference

    O. Nakatsuka, M. Fukuda, M. Kurosawa, M. Sakashita, and S. Zaima

    12th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Sendai   Country:Japan  

  49. Formation and Optoelectronic Characterization of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-heterostructure International conference

    M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

    ACSIN-ICSPM 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sendai   Country:Japan  

  50. Impact of Crystalline Property of SixGe1-x-ySny Ternary Alloy Interlayer on Schottky Barrier Height Engineering of Metal/Ge Contact International conference

    O. Nakatsuka, A. Suzuki, M. Sakashita, and S. Zaima

    ADMETA Plus 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Beijing   Country:China  

  51. Composition and Strain Engineering of New Group-IV Thermoelectric Materials Invited International conference

    M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

    ECS Meeting 

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    Event date: 2018.9 - 2018.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Cancun   Country:Mexico  

  52. Growth and electronic properties of GeSn-related group-IV alloy semicondcutor thin films Invited International conference

    O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

    2018 International Conference on Solid State Devices and Materials (SSDM 2018) 

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Univ. of Tokyo   Country:Japan  

  53. Impact of Oxygen Radical Treatment on Improvement of Al2O3/SiC Interface International conference

    T. Doi, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

    2018 International Conference on Solid State Devices and Materials (SSDM 2018) 

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    Event date: 2018.9

    Language:English   Presentation type:Poster presentation  

    Venue:Univ. of Tokyo   Country:Japan  

  54. GeSn-based thin film thermoelectric generators Invited International conference

    M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

    International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications  

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:France  

  55. Engineering optoelectronic properties of high-Sn-content GeSn, GeSiSn, and SiSn thin films Invited International conference

    O. Nakatsuka, M. Kurosawa, M. Fukuda, M. Sakashita, W. Takeuchi, and S. Zaima

    IEEE Photonics Society Summer Topical Meeting Series 2018 

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  56. Engineering electronic properties of GeSn-related group-IV thin films for nanoelectronic applications Invited International conference

    O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

    European Materials Research Society (2018 E-MRS Spring Meeting) 

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    Event date: 2018.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:France  

  57. Optoelectronic Characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure with High-Si-Content Ge1-x-ySixSny Layer International conference

    M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima

    1st Joint Conference ICSI / ISTDM 2018 

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    Event date: 2018.5

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  58. Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator International conference

    K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa

    The 2nd Electron Devices Technology and Manufacturing (EDTM 2018) 

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    Event date: 2018.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  59. Heterostructure Engineering of GeSn and SiGeSn Group-IV Alloy Semiconductor Layers Invited International conference

    O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

    11th International WorkShop on New Group IV Semiconductor Nanoelectronics 

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    Event date: 2018.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  60. Crystal growth of GeSn-based materials and its application for thin-film thermoelectric generators Invited International conference

    M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

    The 2017 Global Research Efforts on Energy and Nanomaterials (GREEN 2017) 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Taiwan, Province of China  

  61. Characterization of Defects in Ge1-xSnx Gate Stack Structure International conference

    Y. Kaneda, S. Ike, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

    2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2017 IWDTF) 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  62. Development of GeSn-Related Group-IV Semiconductor Thin Films for Future Si Nanoelectronic Applications Invited International conference

    S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, and M. Sakashita

    the 4th International Symposium on Hybrid Materials and Processing (HyMaP 2017) 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (keynote)  

    Country:Korea, Republic of  

  63. GeSn and related group-IV alloy thin films for future Si nanoelectronics Invited International conference

    O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita and S. Zaima

    O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita and S. Zaima 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:China  

  64. Heavy n- and p-type doping for polycrystalline Ge1-xSnx layers using pulsed laser annealing in water International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

    The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher  

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    Event date: 2017.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  65. Characterization of Crystallinity and Energy Band Alignment of Ge1-xSnx/Ge1-x-ySixSny Heterostructure International conference

    M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

    International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017) 

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    Event date: 2017.9 - 2017.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  66. Control of Electrical Property at Metal/Ge Interface with Group-IV Alloy Interlayer International conference

    A. Suzuki, O. Nakatsuka, M. Sakashita, and S. Zaima

    International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017) 

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    Event date: 2017.9 - 2017.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  67. Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

    2017 International Conference on Solid State Devices and Materials (SSDM 2017) 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  68. Research and development of GeSn-related thin-film semiconductors for nanoelectronic and optoelectronic Invited International conference

    O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, S. Zaima

    Frontiers in Materials Processing Applications, Research and Technology (FiMPART 2017) 

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    Event date: 2017.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:France  

  69. Development of GeSn and related semiconductor thin films for next generation optoelectronic applications Invited International conference

    O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

    2017 Global Conference on Polymer and Composite Materials (PCM 2017) 

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    Event date: 2017.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:China  

  70. Alleviation of Fermi level pinning at metal/Ge interface using lattice-matching group-IV ternary alloy interlayer International conference

    A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima

    The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

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    Event date: 2017.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:United Kingdom  

  71. Control of lattice constant of Ge1-x-ySixSny layer for energy band engineering in Ge1-xSnx/Ge1-x-ySixSny heterostructure International conference

    M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

    The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

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    Event date: 2017.5

    Language:English   Presentation type:Poster presentation  

    Country:United Kingdom  

  72. Formation of heavily Sb and Ga doped poly-Ge1-xSnx layers on insulator using pulsed laser annealing in water International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

    The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

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    Event date: 2017.5

    Language:English   Presentation type:Poster presentation  

    Country:United Kingdom  

  73. Heavily p-type Doping to Si1-xSnx Layers Grown on SOI Substrates International conference

    Y. Inaishi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

    10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 11th International Conference on Plasma-Nano Technology and Science (ISPlasma 2018 / IC-PLANTS 2018) 

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    Event date: 2017.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  74. Electrical Properties of AlON/4H-SiC MOS Capacitor Prepared by Plasma-Assisted Atomic Layer Deposition International conference

    W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, O. Nakatsuka, and , S. Zaima

    9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2016 / IC-PLANTS 2017) 

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    Event date: 2017.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  75. Effect of Oxynitridation Annealing for SiO2/SiC Interface on Defects Properties Invited International conference

    W. Takeuchi, K. Yamamoto, M. Sakashita, O. Nakatsuka and S. Zaima

    10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2017.2

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  76. Influence of atomic layer deposition temperature of GeO2 layer on electrical properties of Ge and Ge1-xSnx gate stack International conference

    Y. Kaneda, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima

    10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2017.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  77. Solid phase crystallization of Ge0.98Sn0.02 layers on various insulating substrates International conference

    I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima

    10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2017.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  78. Control of Schottky barrier height of metal/Ge contact using group-IV alloy interlayers International conference

    A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima

    JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration" 

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    Event date: 2016.11

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  79. Formation of heavily Sb doped poly-Ge1-xSnx layer using pulsed laser annealing in water International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

    JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration" 

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    Event date: 2016.11

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  80. Characterization of Deep-Level Defects in Ge1-xSnx Epitaxial Layers using Deep Level Transient Spectroscopy International conference

    W. Takeuchi, Y. Inuzuka, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima

    The 7th International Symposium on Advanced Science and Technology of Silicon Materials (7th JSPS Silicon Symposium) 

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    Event date: 2016.11

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  81. Impact of SixGe1-x-ySny interlayer on reduction in Schottky barrier height of metal/n-Ge contact International conference

    A. Suzuki, S. Toda, O. Nakatsuka, M. Sakashita, and S. Zaima

    2016 International Conference on Solid State Devices and Materials (SSDM 2016) 

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    Event date: 2016.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  82. Effect of N bonding structure in AlON on leakage current of 4H-SiC MOS capacitor International conference

    W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima

    2016 International Conference on Solid State Devices and Materials (SSDM 2016) 

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    Event date: 2016.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  83. Heavy Sb-doping for poly-GeSn on insulator using pulsed laser annealing in water International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

    2016 International Conference on Solid State Devices and Materials (SSDM 2016) 

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    Event date: 2016.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  84. Challenges in Engineering Materials Properties for GeSn Nanoelectronics Invited International conference

    S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita

    The 2016 European Materials Research Society (E-MRS) Fall Meeting 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Poland  

  85. Growth and applications of GeSn-related group-IV semiconductor materials International conference

    S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, Y. Shimura, and M. Sakashita

    IEEE 2016 Summer Topicals Meeting Series 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  86. Interfacial Energy Control for Low-Temperature Crystallization of Ge-rich GeSn Layers on Insulating Substrate International conference

    I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

    ISCSI-VII/ISTDM 2016 

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    Event date: 2016.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  87. Control of the Fermi level pinning position at metal/Ge interface by using Ge1-xSnx interlayer International conference

    A. Suzuki, O. Nakatsuka, M. Sakashita, S. Zaima

    ISCSI-VII/ISTDM 2016 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  88. Development of GeSn thin film technology for electronic and optoelectronic applications International conference

    O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima

    2016 EMN Summer Meeting & Photodetectors Meeting 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Mexico  

  89. Impact of Atomic Hydrogen Irradiation on Epitaxial Growth of Ge1-xSnx and its Crystalline Property International conference

    S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, O. Nakatsuka, H. Kishida, S. Zaima

    ISPlasma 2016 / IC-PLANTS 2016 

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    Event date: 2016.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  90. Solid phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of its crystalline and optical properties International conference

    S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima

    ISPlasma 2016 / IC-PLANTS 2016 

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    Event date: 2016.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  91. Control of Schottky barrier height at metal/Ge interface by insertion of Ge1-xSnx layer International conference

    A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa and S. Zaima

    9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2016.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  92. Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima

    9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2016.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  93. Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers International conference

    J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka and S. Zaima

    9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2016.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  94. Formation of poly-Si1-x-ySnxCy ternary alloy layer and characterization of its crystalline and optical properties International conference

    S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima

    9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2016.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  95. Schottky Barrier Engineering by Epitaxial Metal Germanide/Germanium Contacts International conference

    O. Nakatsuka, Y. Deng, A. Suzuki, M. Sakashita, and S. Zaima

    ISETS '15 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  96. Characterization of electrically active defects in epitaxial GeSn/n-Ge junctions International conference

    W. Takeuchi, Y. Inuzuka, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima

    ISETS '15 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  97. Control of Schottky Barrier Height at Metal/Ge Interface by SnxGe1-x Interlayer International conference

    A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

    ISETS '15 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  98. Electrical Characteristics of Ge pn-junction Diodes Prepared by Using Liquid Immersion Laser Doping International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

    ISETS '15 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  99. Crystal growth and energy band engineering of group-IV semiconductor thin films for nanoelectronic applications International conference

    O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima

    IWAN 2015 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  100. Influence of Atomic Layer Deposition Temperature of GeO2 Layer on Electrical Properties of Ge Gate Stack International conference

    M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima

    2015 IWDTF 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  101. Evaluation of Energy Band Structure of Si1-xSnx by Density Functional Theory Calculation and Photoelectron Spectroscopy International conference

    Y. Nagae, S. Shibayama, M. Kurosawa, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, S. Zaima

    2015 IWDTF 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  102. Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits International conference

    S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita

    The 228th Electrochemical Society Meeting 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:United States  

  103. Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform International conference

    S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi and M. Sakashita

    SSDM 2015 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  104. Impact of Ultra-high Sn Content SnxGe1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface International conference

    A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa and S. Zaima

    SSDM 2015 

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    Event date: 2015.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  105. Effect of Nitridation for SiO2/SiC Interface on Defects Properties near Conduction Band Edge International conference

    W. Takeuchi, K. Yamamoto, M. Sakashita, T. Kanemura, O. Nakatsuka and S. Zaima

    SSDM 2015 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  106. Characterization of Deep-level Defects in Epitaxial Ge1-xSnx/Ge structure International conference

    W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima

    JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration 

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    Event date: 2015.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:France  

  107. Reduction of Schottky barrier height with Sn/Ge contact International conference

    A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, S. Zaima

    JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration 

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    Event date: 2015.7

    Language:English   Presentation type:Poster presentation  

    Country:France  

  108. Development of polycrystalline Sn-related group-IV semiconductor thin films - Aiming for 3D-IC International conference

    M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

    2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015) 

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    Event date: 2015.6 - 2015.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  109. Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation International conference

    K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima

    15th International Workshop on Junction Technology 2015 (IWJT 2015) 

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    Event date: 2015.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  110. Formation of type-I energy band alignment of Ge1-x-ySixSny/Ge hetero structure International conference

    T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima

    T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  111. Thermophysical characterizations of Ge1-xSnx epitaxial layers aiming for thermoelectric devices International conference

    T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima

    M. Kurosawa, M. Fukuda, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  112. Control of Electrically Active Defects in Ge1-xSnx Epitaxial Layers International conference

    T. Asano, S. Shibayama, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

    T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  113. Electrically-Active Defects in Ge1-xSnx Epitaxtial Layer International conference

    W. Takeuchi, T. Asano, M. Sakashita, O. Nakatsuka, S. Zaima

    7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 8th International Conference  

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    Event date: 2015.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  114. Solid phase epitaxy of Ge1-x-ySnxCy ternary alloy layers International conference

    H. Oda, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

    7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 8th International Conference  

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    Event date: 2015.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  115. Crystalline and Optical Properties of Ge1-x-ySixSny Ternary Alloy Layers for Solar Cell Application International conference

    T. Yamaha, S. Asaba, T. Terashima, T. Asano, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

    8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  116. Behaviors of tin related defects in Sb doped n-type germanium International conference

    W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka and S. Zaima

    8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  117. Development of metal/Ge contacts for engineering Schottky barriers International conference

    O. Nakatsuka, Y. Deng, A. Suzuki, S. Shibayama, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima

    JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration" 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Belgium  

  118. Formation of Epitaxial NiGe Layer on Ge(001) Substrate and Influence of Interface Structure on Schottky Barrier Height International conference

    O. Nakatsuka, Y. Deng, M. Sakashita, and S. Zaima

    Advanced Metallization Conference 2014: 24th Asian Session (ADMETA Plus 2014) in conjunction with the 3rd  

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  119. Low Schottky barrier height contacts with Sn electrode for various orientation n-Ge substrates International conference

    A. Suzuki, D. Yunsheng, S. Shibayama, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

    Advanced Metallization Conference 2014: 24th Asian Session (ADMETA Plus 2014) in conjunction with the 3rd  

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  120. Challenges and Developments in GeSn Process Technology for Si Nanoelectronics International conference

    S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita

    226th Meeting of The Electrochemical Society (ECS) and SMEQ (Sociedad Mexicana de Electroquímica) Joint  

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Mexico  

  121. Impact of Hydrogen Surfactant Epitaxy and Annealing on Crystallinity of Epitaxial Ge1-xSnx Layers International conference

    2014 International Conference on Solid State Devices and Materials (SSDM 2014) 

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    Event date: 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  122. Mobility behavior of Si1-x-yGexSny polycrystals grown on insulators International conference

    International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014) 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  123. Transformation of Defects Structure in Germanium by Sn Ion Implantation International conference

    International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014) 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  124. Crystalline Growth and Characterization of Group-IV Ternary Alloy Thin Films for Solar Cell International conference

    T. Yamaha, K. Terasawa, T. Terashima, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

    T. Yamaha, K. Terasawa, T. Terashima, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima 

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    Event date: 2014.7 - 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  125. Formation and Electrical Properties of Metal/Ge1-xSnx Contacts International conference

    O. Nakatsuka, T. Nishimura, A. Suzuki, K. Kato, Y. Deng, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima

    14th International Workshop on Junction Technology (IWJT 2014) 

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    Event date: 2014.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  126. Sn-related Group-IV semiconductor materials for electronic and optoelectronic applications International conference

    O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

    3rd international Conference on Nanotek and Expo (Nanotek-2013) 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  127. Development of Ge1-xSn and Ge1-x-ySixSny thin film materials for future electronic applications International conference

    O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima

    3rd international Conference on Nanotek and Expo (Nanotek-2013) 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  128. Quantitative Guideline for Formation of Ge MOS Interface with Low Interface State Density International conference

    S. Shibayama, K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, S. Zaima

    IWDTF2013 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  129. Robustness of Sn Precipitation During Thermal Process of Ge1-xSnx International conference

    K. Kato, T. Asano, N. Taoka, M. Sakashita, O. Nakatsuka, S. Zaima

    IWDTF2013 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  130. Interface Properties of Al2O3/Ge MOS Structures with Thin Ge Oxide Interfacial Layer Formed by Pulsed MOCVD International conference

    T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, S. Zaima

    IWDTF2013 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  131. Heteroepitaxial Growth of Sn-Related Group-IV Materials On Si Platform for Microelectronic and Optoelectronic Applications:Challenges and Opportunities International conference

    O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita and S. Zaima

    The 224th Electrochemical Society Meeting 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  132. Reduction of Interface States Density due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface International conference

    S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima

    The 224th Electrochemical Society Meeting 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  133. Interaction between Sn atoms and Defects Introduced by Ion Implantation in Ge Substrate International conference

    N. Taoka, M. Fukudome, T. Arahira, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

    JSPS Core-to-Core Program Workshop - Atomically Controlled Processing for Ultralarge Scale Integration - 

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    Event date: 2013.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  134. Stabilization for Higher-k Films with Meta-Stable Crystalline Structure International conference

    K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    JSPS Core-to-Core Program Workshop - Atomically Controlled Processing for Ultralarge Scale Integration - 

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    Event date: 2013.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  135. Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode International conference

    A. Suzuki, S. Asaba, J. Yokoi, O. Nakatsuka, M. Kurosawa, K. Kato, M. Sakashita, N. Taoka and S. Zaima

    2013 International Conference on Solid State Devices and Materials (SSDM 2013) 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  136. Engineering of Energy Band Structure with Epitaxial Ge1-x-ySixSny/n-Ge Hetero Junctions for Solar Cell Applications International conference

    S. Asaba, T. Yamaha, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima

    2013 International Conference on Solid State Devices and Materials (SSDM 2013) 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  137. Interaction of Sn atoms with Defects Introduced by Ion Implantation in Ge Substrate International conference

    T. Arahira, M. Fukudome, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima

    2013 International Conference on Solid State Devices and Materials (SSDM 2013) 

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    Event date: 2013.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  138. Function of Additional Element Incorporation for Tetragonal ZrO2 Formation International conference

    K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

    NIMS Conference 2013 -Structure Control of Atomic/Molecular Thin Films and Their Applications- 

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    Event date: 2013.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  139. Formation of Tetragonal ZrO2 Thin Film by ALD Method International conference

    K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  140. Control of Interfacial Reactions in Al2O3/Ge Structures International conference

    S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  141. Lateral Growth Enhancement of Poly-Ge1-xSnx on SiO2 using a Eutectic Reaction International conference

    M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  142. Crystalline Phase Control of Pr-Oxide Films by Regulating Oxidant Partial Pressure and Si Diffusion International conference

    K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  143. Impacts of AlGeO Formation by Post Thermal Oxidation of Al2O3/Ge Structure on Interface Properties International conference

    S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar 

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    Event date: 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  144. Feasibility of Ge Device Fabrication by Low Temperature Processes on ULSI Circuits International conference

    N. Taoka, M. Kurosawa, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar 

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    Event date: 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  145. Low temperature crystallization of group-IV semiconductors induced by eutectic metals (Al, Sn) International conference

    M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar 

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    Event date: 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  146. Control of Al2O3/Ge interfacial structures by post oxidation technique using oxygen radical International conference

    K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  147. Defects introduced in germanium substrate by reactive ion etching International conference

    Kusumandari, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, S. Zaima

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  148. Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical International conference

    K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    International Conference on Solid State Devices and Materials 

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    Event date: 2012.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  149. High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization International conference

    W. Takeuchi, N. Taoka, M. Kurosawa, M. Fukutome, M. Sakashita, O. Nakatsuka, and S. Zaima

    International Conference on Solid State Devices and Materials 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  150. Importance of Si Bandbending at Zero Bias Condition for Schottky Barrier Height Control at Metal/Si Interfaces with Ultra-thin Al2O3 Layer International conference

    H. Matsushita, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima

    IUMRS International Conference on Electronic Materials 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  151. Thermal Oxidation Mechanism of Ge through Al2O3 Layer Formed on Ge Substrate International conference

    S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    IUMRS International Conference on Electronic Materials 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  152. Epitaxial Growth and Characterizations of Ge1-xSnx and Ge1-x-ySixSny Thin Layers for Nanoelectronic and Optoelectronic Applications International conference

    O. Nakatsuka, N. Taoka, M. Sakashita, W. Takeuchi, S. Zaima

    University of Vigo and JSPS Core-to-Core Program Joint Seminar 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Spain  

  153. Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures International conference

    Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

    AWAD2012 

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    Event date: 2012.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  154. Potential of GeSn Alloys for Application to Si Nanoelectronics International conference

    S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, O. Nakatsuka

    2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

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    Event date: 2012.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  155. Control of Interfacial and Electrical Properties of Metal/Pr-oxide/Ge Gate Stack Structures International conference

    K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

    CNSE and JSPS Core-to-Core Program Joint Seminar 

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    Event date: 2012.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  156. Effect of Gate Metal Electrode on Chemical Bonding State in Metal/Pr-oxide/Ge Gate Stack Structure International conference

    K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

    ISTDM2012 

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    Event date: 2012.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  157. Effect of N Radical Process on Interfacial and Electrical Properties of Al2O3/Ge Structure International conference

    K.Kato, M.Sakashita, W.Takeuchi, O. Nakatsuka, and S.Zaima

    IC-PLANTS 2012 

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    Event date: 2012.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  158. The effect of light exposure on the electrical properties of GeO2/Ge gate stack International conference

    Kusumandari, W.Takeuchi, M.Sakashita, O.Nakatsuka, and S.Zaima

    ISPlasma2012 

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    Event date: 2012.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  159. Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique International conference

    K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

    ICTF-15 

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    Event date: 2011.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  160. Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-Oxide Film International conference

    W. Takeuchi, K. Furuta, K. Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima

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    Event date: 2011.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  161. Improvement of Al2O3 Interfacial Properties by O2 Annealing International conference

    S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

    ICSI-7 

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    Event date: 2011.8 - 2011.9

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  162. Effect of N Radical Process on Interfacial and Electrical Properties of Al2O3/Ge Structure International conference

    K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

    IC-PLANTS2011 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  163. Characterization of Damages of Al2O3/Ge Gate Stacks Structure Induced with Light Radiation during Plasma Nitridation International conference

    Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima

    ISPLasma2011 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  164. Influence of Light Radiation on Electrical Properties of Al2O3/Ge and GeO2/Ge Gate Stacks in Nitrogen Plasma International conference

    Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima

    IWDTF 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  165. Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique International conference

    K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, S. Zaima

    IWDTF 

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    Event date: 2011.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  166. Study of Ge Surface Passivation using Radical Nitridation Technique for Ge Channel MOS Transistors International conference

    K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima

    The 1st Korea-Japan Symposium on Surface Technology 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  167. Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy International conference

    2010 International Conference on Solid State Devices and Materials (SSDM 2010) 

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    Event date: 2010.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  168. Effects of Al Incorporation into Pr-oxides Formed by Atomic Layer Deposition International conference

    2010 International Conference on Solid State Devices and Materials (SSDM 2010) 

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    Event date: 2010.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  169. Nitrogen content dependence of crystalline and electrical properties of ternary transition metal gate electrodes International conference

    International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE) 

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    Event date: 2010.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  170. Crystalline and electrical properties of PrAlO gate insulator films formed by atomic layer deposition International conference

    International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE) 

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    Event date: 2010.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  171. Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen International conference

    5th International SiGe Technology Device Meeting 2010 (ISTDM2010) 

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    Event date: 2010.5

    Language:English   Presentation type:Poster presentation  

  172. Formation of Pr Oxide Films by Atomic Layer Deposition using Pr(EtCp)3 Precursor International conference

    2009 International Conference on Solid State Devices and Materials (SSDM) 

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    Event date: 2009.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  173. LaAlO/Ge構造へのALD-Al2O3界面制御層挿入の効果

    坂下満男, 加藤亮祐, 京極真也, 近藤博基, 財満鎭明

    応用物理学会 シリコンテクノロジー分科会研究集会 

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    Event date: 2009.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  174. Pr-Oxide-Based Dielectric Films on Ge Substrates International conference

    2007 International Conference on Solid State Devices and Materials 

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    Event date: 2007.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

    We investigated film structures and electrical properties of Pr oxide films prepared in various ambient on Ge (001) wafers by pulsed laser deposition. Angle-resolved X-ray photoelectron spectroscopy revealed that GeOx incorporation into the Pr oxide film is obvious, leading to reduction of permittivity, when depositing in Ar ambient, whereas it is suppressed in O2 and the vacuum deposition.

  175. Ge基板上に堆積したPr酸化物ゲート絶縁膜の角度分解XPSによる評価

    坂下満男、鬼頭伸幸、酒井 朗、小川正毅、財満鎭明

    第68回応用物理学会学術講演会 

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    Event date: 2007.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  176. Ge基板上へのPr酸化膜の作製と評価

    坂下満男、鬼頭伸幸、酒井 朗、小川正毅、財満鎭明

    応用物理学会 シリコンテクノロジー分科会研究集会 

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    Event date: 2007.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  177. Prシリケイト膜の結晶構造と電気的特性の熱処理依存性

    坂下満男、山矢 隼、酒井 朗、小川正毅、財満鎭明

    第52回応用物理学関係連合講演会 

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    Event date: 2005.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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KAKENHI (Grants-in-Aid for Scientific Research) 3

  1. 省電力/超高速ナノCMOSのための電子物性設計と高移動度チャネル技術の創生

    2010.5 - 2014.3

    科学研究費補助金  22000011

    財満鎭明

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    Authorship:Coinvestigator(s) 

  2. ナノ領域における極微少電流特性のキャリアセパレーション評価技術の開発

    2007

    科学研究費補助金  基盤研究(C)(一般),課題番号:19560022

    坂下 満男

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    Authorship:Principal investigator 

  3. ナノシステム機能化High-kゲート/歪制御ゲルマニウムチャネル構造の創成

    2006.7 - 2010.3

    科学研究費補助金  18063012

    財満鎭明

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    Authorship:Coinvestigator(s) 

Industrial property rights 5

  1. 半導体素子用基材及びその製造方法

    近藤 博基、財満 鎭明、小川 正毅、酒井 朗、坂下 満男、内藤 慎哉、上山 知紀、安田 幸夫

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    Applicant:国立大学法人名古屋大学

    Application no:特許出願2005-56482  Date applied:2005.3

    Announcement no:特許公開2006-245133 

    Date registered:2006.9 

    Country of applicant:Domestic  

    ガス照射を利用しないドライプロセスによる簡素な方法により、ドット状のシリコンナノクラスタにおける粒径バラツキを抑えるとともに、さらなる粒径の縮小化及び高数密度化を図る。

  2. 絶縁膜を有した半導体装置の製造方法及び半導体装置

    酒井 朗、財満 鎭明、安田 幸夫、坂下 満男、高橋 亮也

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    Applicant:国立大学法人名古屋大学

    Application no:特許出願2004-214954  Date applied:2004.7

    Announcement no:特許公開2006-40977 

    Date registered:2006.2 

    Country of applicant:Domestic  

    MOS型FETにおける絶縁膜のCET(等価SiO2換算膜厚)を低下させ、リーク電流を低減させること。

  3. シリコンナノ結晶の作製方法、シリコンナノ結晶、フローティングゲート型メモリキャパシタ構造の作製方法、及びフローティングゲート型メモリキャパシタ構造

    近藤 博基、安田 幸夫、財満 鎭明、酒井 朗、坂下 満男、内藤 慎哉、佐竹 正城

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    Applicant:国立大学法人名古屋大学

    Application no:特許出願2003-363411  Date applied:2003.10

    Announcement no:特許公開2005-129708 

    Date registered:2005.5 

    Country of applicant:Domestic  

    高密度かつ微細化されたナノ結晶を作製する技術を確立し、これを利用して実用的な半導体ドットメモリを提供する。

  4. 高誘電率金属酸化物膜の作製方法、高誘電率金属酸化物膜、ゲート絶縁膜、及び半導体素子

    酒井 朗、安田 幸夫、財満 鎭明、坂下 満男、近藤 博基、坂下 真介

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    Applicant:国立大学法人名古屋大学

    Application no:特許出願2003-172182  Date applied:2003.6

    Announcement no:特許公開2005-11887 

    Patent/Registration no:特許第3831764号  Date registered:2005.1 

    Country of applicant:Domestic  

    半導体素子のゲート絶縁膜などとして好適に用いることのできる、高誘電率かつ結晶粒界などの欠陥が少なく、リーク電流などを十分に抑制することができる、新規な高誘電率金属酸化物膜を提供する。

  5. MOSデバイス及びその製造方法

    安田 幸夫、財満 鎭明、酒井 明、坂下 満男

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    Applicant:名古屋大学長

    Application no:特許出願2000-159471  Date applied:2000.5

    Announcement no:特許公開2001-339061 

    Date registered:2001.12 

    Country of applicant:Domestic  

    MOSトランジスタの相互コンダクタンス及び電流駆動能力の低下を防止する。

 

Teaching Experience (On-campus) 17

  1. 物理工学実験第2

    2022

  2. 物理工学実験第1

    2022

  3. 物理工学実験第3

    2022

  4. 結晶デバイス工学特別実験及び演習A

    2020

  5. 結晶デバイスセミナー2E

    2020

  6. 結晶デバイスセミナー2D

    2020

  7. 結晶デバイスセミナー2C

    2020

  8. 結晶デバイスセミナー2B

    2020

  9. 結晶デバイスセミナー2A

    2020

  10. 結晶デバイスセミナー1D

    2020

  11. 結晶デバイスセミナー1C

    2020

  12. 結晶デバイスセミナー1B

    2020

  13. 結晶デバイスセミナー1A

    2020

  14. 物理工学実験第3

    2020

  15. 物理工学実験第2

    2020

  16. 物理工学実験第1

    2020

  17. 結晶デバイス工学特別実験及び演習B

    2020

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