実行委員（会計）  

2015 - 2016.6   

  実行委員（会計）  

2015 - 2016.3   

  実行委員  

2011.3 - 2011.9   

Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing Reviewed

Kazuya Okada, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, and Masashi Kurosawa

Mater. Sci. Semicond. Proc.   Vol. 161   page： 107462   2023.3

Ge1−xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping Reviewed

Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka

Mater. Sci. Semicond. Proc.   Vol. 176   page： 108302   2023

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface Reviewed

Kagoshima E., Takeuchi W., Kutsuki K., Sakashita M., Fujiwara H., Nakatsuka O.

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SC )   2022.5

Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray Reviewed

W. Takeuchi, E. Kagoshima, K. Sumitani, Y. Imai, S. Shibayama, M. Sakashita, S. Kimura, H. Tomita, T. Nishiwaki, H. Fujiwara, and O. Nakatsuka

Japanese Journal of Applied Physics   Vol. 61   page： SC1072   2022.5

Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs Invited Reviewed

T. Doi, S. Shibayama, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( 2 ) page： 021007   2022.2

Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height

Doi Takuma, Shibayama Shigehisa, Sakashita Mitsuo, Kojima Kazutoshi, Shimizu Mitsuaki, Nakatsuka Osamu

APPLIED PHYSICS EXPRESS   Vol. 15 ( 1 )   2022.1

Photoluminescence properties of heavily Sb doped Ge1-x Sn (x) and heterostructure design favorable for n(+)-Ge1-x Sn (x) active layer

Zhang Shiyu, Fukuda Masahiro, Jeon Jihee, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SA )   2022.1

Interface structures and electrical properties of micro-fabricated epitaxial Hf-digermanide/n-Ge(001) contacts Invited Reviewed

K. Kasahara, K. Senga, M. Sakashita, S. Shibayama, and O. Nakatsuka

IEEE Journal of the Electron Devices Society     2021.12

Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion

Doi Takuma, Shibayama Shigehisa, Sakashita Mitsuo, Shimizu Mitsuaki, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 7 )   2021.7

Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO2-ZrO2 System

Shibayama Shigehisa, Nagano Jotaro, Asaka Koji, Sakashita Mitsuo, Nakatsuka Osamu

ACS APPLIED ELECTRONIC MATERIALS   Vol. 3 ( 5 ) page： 2203 - 2211   2021.5

Formation and Characterization of Ge1–x–ySixSny/Ge Heterojunction Structures for Photovoltaic Cell Application Invited Reviewed

O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima

ECS Trans.   Vol. 102 ( 4 ) page： 3 - 9   2021.4

Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property

Kasahara Kentaro, Senga Kazuki, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu

TWENTIETH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT 2021)     page： 58 - 60   2021

Formation of ultra-thin Ge1-xSnx/Ge1-x-ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode Reviewed

Suwito Galih Ramadana, Fukuda Masahiro, Suprayoga Edi, Ohtsuka Masahiro, Hasdeo Eddwi Hesky, Nugraha Ahmad Ridwan Tresna, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu

APPLIED PHYSICS LETTERS   Vol. 117 ( 23 )   2020.12

Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Invited Reviewed

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

ECS Trans.   Vol. 98 ( 5 ) page： 149 - 156   2020.9

Impact of byproducts formed on a 4H-SiC surface on interface state density of Al2O3/4H-SiC(0001) gate stacks Reviewed

Doi Takuma, Shibayama Shigehisa, Takeuchi Wakana, Sakashita Mitsuo, Taoka Noriyuki, Shimizu Mitsuaki, Nakatsuka Osamu

APPLIED PHYSICS LETTERS   Vol. 116 ( 22 )   2020.6

Ferroelectric phase formation for undoped ZrO2 thin films by wet O2 annealing Reviewed

S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka

Jpn. J. Appl. Phys.   Vol. 59   page： SMMA04-1   2020.4

Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor Reviewed

Takeuchi Wakana, Kutsuki Katsuhiro, Kagoshima Eiji, Onishi Toru, Iwasaki Shinya, Sakashita Mitsuo, Fujiwara Hirokazu, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications Invited Reviewed

O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima

ECS Trans. 2019   Vol. 92   page： 41   2019.10

Formation and optoelectronic property of strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures on a boron-ion-implanted Ge(001) substrate Reviewed

Fukuda Masahiro, Rainko Denis, Sakashita Mitsuo, Kurosawa Masashi, Buca Dan, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.8

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process Reviewed

K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa

Applied Physics Express   Vol. 12   page： 051016   2019.5

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment (vol 58, SBBD05, 2019) Reviewed

Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.4

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment Reviewed

T. Doi, W. Takeuchi, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 58   page： SBBD05   2019.2

Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2

Senga Kazuki, Shibayama Shigehisa, Sakashita Mitsuo, Zaima Shigeaki, Nakatsuka Osamu

2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)     page： .   2019

Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny Quantum Well Structures

Suwito Galih Ramadana, Fukuda Masahiro, Shibayama Shigehisa, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

2019 COMPOUND SEMICONDUCTOR WEEK (CSW)     page： .   2019

Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination Reviewed

M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 58   page： SAAS02   2018.11

Optoelectronic properties of high-Si-content-Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructure Reviewed

M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima

Semicond. Sci. Tech.   Vol. 33 ( 12 ) page： 124018   2018.11

A New Application of Ge1-xSnx: Thermoelectric Materials Invited Reviewed

M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

ECS Trans. 2018   Vol. 86 ( 7 ) page： 321-328   2018.10

Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1-x-ySny ternary alloy interlayer on Ge Reviewed

Suzuki Akihiro, Nakatsuka Osamu, Sakashita Mitsuo, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water Reviewed

Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water Reviewed

Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

APPLIED PHYSICS LETTERS   Vol. 112 ( 6 )   2018.2

Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor Reviewed

Takeuchi Wakana, Yamamoto Kensaku, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Sigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 1 )   2018.1

Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator

Takahashi Kouta, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki, Kurosawa Masashi

2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018)     page： 313 - 315   2018

Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1-xSnx and Sn interlayers Reviewed

Suzuki Akihiro, Nakatsuka Osamu, Sakashita Mitsuo, Zaima Shigeaki

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 70   page： 162-166   2017.11

Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate Reviewed

Yoshikawa Isao, Kurosawa Masashi, Takeuchi Wakana, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 70   page： 151-155   2017.11

Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures Reviewed

Fukuda Masahiro, Watanabe Kazuhiro, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 32 ( 10 )   2017.10

Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effects on crystalline quality and photoluminescence property

Nakatsuka Osamu, Fujinami Shunsuke, Asano Takanori, Koyama Takeshi, Kurosawa Masashi, Sakashita Mitsuo, Kishida Hideo, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties

Yano Shota, Yamaha Takashi, Shimura Yosuke, Takeuchi Wakana, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effects on crystalline quality and photoluminescence property Reviewed

O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida and S. Zaima

Jpn. J. Appl. Phys.   Vol. 56   page： 01AB05   2016.12

Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties Reviewed

S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima

Jpn. J. Appl. Phys.   Vol. 56   page： 01AB02   2016.11

Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys Reviewed

Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi and S. Zaima

Jpn. J. Appl. Phys.   Vol. 55   page： 08PE04   2016.7

Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack

M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 55   page： 08PC05   2016.6

Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価

金田裕一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

信学技報 IEICE Technical Report     page： 37   2016.6

Sn系IV族半導体混晶薄膜の成長と物性評価

志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明

信学技報 IEICE Technical Report   Vol. 116   page： 23   2016.4

Effects of nitridation for SiO2/SiC interface on defect properties near the conduction band edge

W. Takeuchi, K. Yamamoto, N. Taoka, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 55   page： 04ER13   2016.3

Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer

J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 55   page： 04ER13   2016.3

Growth of ultrahigh-Sn-content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 55   page： 04EB12   2016.3

Experimental observation of type-I energy band alignment in lattice-matched Ge1-x-ySixSny/Ge heterostructures

T. Yamaha, S. Shibayama, T. Asano, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima

Appl. Phys. Lett.   Vol. 108   page： 061909   2016.2

Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima

Appl. Phys. Lett.   Vol. 108   page： 052104   2016.2

原子層堆積法を用いたGeO2/Ge界面形成および欠陥の堆積温度依存性

兼松正行, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告     page： 5   2016.1

界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長

吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告     page： 21   2016.1

Characterization of Shallow-and Deep-Level Defects in Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements

W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima

ECS Journal of Solid State Science and Technology   Vol. 5   page： 3082   2016.1

Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators

T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Transactions of the Materials Research Society of Japan   Vol. 40   page： 351   2015.12

Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

Appl. Phys. Lett.   Vol. 107   page： 212103   2015.11

Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits

S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita

ECS Trans. 2015   Vol. 69   page： 89   2015.10

Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures

K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 107   page： 102102   2015.9

Epitaxial formation of Ni germanide on Ge(0 0 1) substrate by reactive deposition

Y. Deng, O. Nakatsuka, A. Suzuki, M. Sakashita, S, Zaima

Solid-State Electronics   Vol. 110   page： 44   2015.8

Growth and applications of GeSn-related group-IV semiconductor materials Reviewed

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi and M. Sakashita

Science and Technology of Advanced Materials   Vol. 16   page： 043502   2015.7

High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization Reviewed

W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 107   page： 022103   2015.7

SiO2/SiC MOS界面の欠陥特性に酸窒化処理が与える影響

竹内和歌奈, 山本建策, 坂下満男, 金村髙司, 中塚理, 財満鎭明

信学技報 IEICE Technical Report   Vol. 115   page： 27   2015.6

Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果

浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

信学技報 IEICE Technical Report   Vol. 115   page： 63   2015.6

金属/Ge界面への超高Sn組成SnxGe1-x層導入による界面電気伝導特性の制御

鈴木陽洋, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

信学技報 IEICE Technical Report   Vol. 115   page： 57   2015.6

高Sn組成SiSnの形成とバンド構造 －直接遷移構造化を目指して－

黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

信学技報 IEICE Technical Report   Vol. 115   page： 35   2015.4

Influence of interface structure on electrical properties of NiGe/Ge contacts Reviewed

Y. Deng, O. Nakatsuka, M. Sakashita and S. Zaima

Jpn. J. Appl. Phys.   Vol. 54   page： 05EA01   2015.4

Impact of hydrogen surfactant on crystallinity of Ge1-xSnx epitaxial layers Reviewed

T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima

Jpn. J. Appl. Phys.   Vol. 54   page： 04DH15   2015.3

Formation of chemically stable GeO2 on the Ge surface with pulsed metal-organic chemical vapor deposition Reviewed

S. Shibayama, T. Yoshida, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 106   page： 062107   2015.2

Sn/Geコンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減

鈴木陽洋, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」第20回記念研究会研究報告     page： 59   2015.1

GeO2薄膜の正方晶形成による化学的安定性の向上

柴山茂久, 吉田鉄兵, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」第20回記念研究会研究報告     page： 185   2015.1

Challenges and Developments in GeSn Process Technology for Si Nanoelectronics Invited Reviewed

S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita

ECS Trans. 2014   Vol. 64   page： 147   2014.10

Formation of high-quality oxide/Ge1-xSnx interface with high surface Sn content by controlling Sn migration Reviewed

K. Kato, N. Taoka, T. Asano, T. Yoshida, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 105   page： 122103   2014.9

Robustness of Sn precipitation during thermal oxidation of Ge1-xSnx on Ge(001) Reviewed

K. Kato, T. Asano, N. Taoka, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima

Jpn. J. Appl. Phys.   Vol. 53   page： 08LD04   2014.7

Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 53   page： 08LD02   2014.7

Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition Reviewed

T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 53   page： 08LD03   2014.7

Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate Reviewed

N. Taoka, M. Fukudome, W. Takeuchi, T. Arahira, M. Sakashita, O. Nakatsuka, and S. Zaima

J. Appl. Phys.   Vol. 115   page： 173102   2014.5

Importance of control of oxidant partial pressure on structural and electrical properties of Pr-oxide films Reviewed

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

Thin Solid Films   Vol. 557   page： 276   2014.4

Stabilized formation of tetragonal ZrO2 thin film with high permittivity Reviewed

K. Kato, T. Saito, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

Thin Solid Films   Vol. 557   page： 192   2014.4

Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

Thin Solid Films   Vol. 557   page： 282   2014.4

Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode Reviewed

A. Suzuki, S. Asaba, J. Yokoi, K. Kato, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, S. Zaima

Jpn. J. Appl. Phys.   Vol. 53   page： 04EA06   2014.3

Defects Induced by Reactive Ion Etching in Ge Substrate Reviewed

Kusumandari, N.taoka, W. takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

Advanced Materials Research   Vol. 896   page： 241   2014.2

低界面準位密度を有するGe MOS構造を実現するGe表面の酸化条件 Reviewed

柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会     page： 16   2014.1

Al2O3/SiC MOS構造における伝導帯端近傍の電気特性 Reviewed

田岡紀之, 坂下満男, 中塚理, 財満鎭明

応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会     page： 205   2014.1

MOCVD法により形成した極薄GeO2を用いたAl2O3/GeOx/Ge構造の電気的特性および構造評価 Reviewed

吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明

応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会     page： 131   2014.1

固溶限を超えるSn組成を有するGe1-xSnx層中におけるSn原子の熱安定性 Reviewed

加藤公彦, 浅野孝典, 田岡紀之, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

応用物理学会 薄膜・表面物理分科会、シリコンテクノロジー分科会 共催 特別研究会「ゲートスタック研究会     page： 37   2014.1

n型Ge単結晶中におけるSnと空孔関連欠陥との相互作用 Reviewed

竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明

信学技報（電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス）   Vol. 114   page： 113   2014

絶縁膜上におけるIV族半導体多結晶薄膜の低温形成　～ 低融点Snの活用 ～ Reviewed

黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

信学技報（電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス）   Vol. 114   page： 91   2014

Sn/Geコンタクトにおけるフェルミレベルピニング現象の軽減 Reviewed

鈴木陽洋, 朝羽俊介, 横井淳, 中塚理, 黒澤昌志, 加藤公彦, 坂下満男, 田岡紀之, 財満鎭明

信学技報（電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス）   Vol. 114   page： 11   2014

Heteroepitaxial Growth of Sn-Related Group-IV Materials On Si Platform for Microelectronic and Optoelectronic Invited Reviewed

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita and S. Zaima

ECS Trans. 2013   Vol. 58   page： 149   2013.10

Reduction of Interface States Density due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima

ECS Trans. 2013   Vol. 58   page： 301   2013.10

Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer Reviewed

M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao and S. Zaima

M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao and S. Zaima   Vol. 103   page： 101904   2013.9

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima

Appl. Phys. Lett.   Vol. 103   page： 082114   2013.8

Broad defect depth distribution in germanium substrates induced by CF4 plasma Reviewed

Kusumandari, N. Taoka, W. Takeuchi, M. Fukudome, M. Sakashita, O. Nakatsuka and S. Zaima

Appl. Phys. Lett.   Vol. 103   page： 033511   2013.7

Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響 Reviewed

加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

ゲートスタック研究会 ─材料・プロセス・評価の物理─     page： 155-158   2013.1

Al2O3/Ge構造に対する熱酸化機構の解明 Reviewed

柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

ゲートスタック研究会 ─材料・プロセス・評価の物理─     page： 39-42   2013.1

テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成 Reviewed

吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

ゲートスタック研究会 ─材料・プロセス・評価の物理─     page： 151-154   2013.1

Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure Reviewed

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Solid-State Electron   Vol. 83   page： 56   2013

Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical Reviewed

K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 52   page： 04CA08   2013

Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Reviewed

K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

J. Phys.: Conf. Ser.   Vol. 417   page： 012001   2013

Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures Reviewed

Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 52   page： 01AC04   2013

ラジカルプロセスによるAl2O3/Ge界面特性の改善

加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会     page： 125-128   2012.1

Al2O3/Geに対する酸素熱処理が電気的特性および化学結合状態に与える効果

柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会     page： 129-132   2012.1

Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation Reviewed

Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 51   page： 01AJ01   2012

Improvement of Al2O3/Ge interfacial properties by O2-annealing Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Thin Solid Films   Vol. 520   page： 3397   2012

電流検出型原子間力顕微鏡を用いた欠陥に起因するPr酸化膜のリーク電流機構の解明 Reviewed

足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 123-126   2011.1

Pr酸化膜/Si構造へのAl導入による界面反応抑制効果 Reviewed

古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 51-54   2011.1

Al2O3界面層およびラジカル窒化法によるHigh-k/Ge界面構造および電気的特性の制御 Reviewed

加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 55-58   2011.1

Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響 Reviewed

加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 99-102   2011.1

Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy Reviewed

M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 50   page： 04DA08   2011

Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure Reviewed

K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 50   page： 04DA17   2011

原子層堆積法により形成したPrAlOの結晶構造および電気的特性

古田和也、竹内和歌奈、坂下満男、近藤博基、中塚理、財満鎭明

ゲートスタック技術の進展　-新構造・新材料を中心に-     page： 39-42   2010.6

1.2 nm-SiONゲート絶縁膜における局所劣化現象の電流検出型原子間力顕微鏡を用いたナノスケール観察

加藤雄三, 平安座朝誠, 坂下満男, 近藤博基, 財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 105-108   2010.1

Pr(EtCp)3を用いたPr酸化膜の原子層堆積とその結晶構造及び電気的特性

古田和也, 松井裕高, 近藤博基, 坂下満男, 財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 125-128   2010.1

ALD-Pr酸化膜/Ge3N4/Ge構造における界面構造と電気的特性

加藤公彦, 近藤博基, 坂下満男, 財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 121-124   2010.1

*Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor Reviewed

H. Kondo, S. Sakurai, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

Appl. Phys. Lett.   Vol. 95   page： 012105   2010

*Formation of Pr Oxide Films by Atomic Layer Deposition Using Pr(EtCp)3 precursor Reviewed

H. Kondo, H. Matsui, K. Furuta, M. Sakashita, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 49   page： 04DA14   2010

*Formation Processes of Ge3N4 Films by Radical Nitridation and Their Electrical Properties Reviewed

K. Kato, H. Kondo, , M. Sakashita, and S. Zaima

Thin Solid Films   Vol. 518   2010

アモルファスTi-Si-N MOSゲート電極の熱的安定性およびスケーラビリティ

宮本和明，古米孝平，近藤博基，坂下満男，財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 89-92   2009.1

アモルファスTi-Si-NおよびHf-Si-N MOSゲート電極の結晶構造と抵抗率の窒素濃度依存性

近藤博基，宮本和明，古米孝平，坂下満男，財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 191-194   2009.1

Al2O3界面層挿入によるLaAlO3/Ge 界面制御効果

加藤亮祐，京極真也，坂下満男，近藤博基，財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 133-136   2009.1

Pr(EtCp)3を用いたMOCVD法によるPr酸化膜の作製およびその電気的特性の評価

松井裕高，櫻井晋也，近藤博基，坂下満男，財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-     page： 125-128   2009.1

Thermal Stability and Scalability of Mictamict Ti–Si–N Metal–Oxide–Semiconductor Gate Electrodes Reviewed

H. Kondo, K. Furumai, M. Sakashita, A. Sakai, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 48   page： 04C012-1-5   2009

Pt(EtCp)3を用いた原子層堆積法によるPr酸化膜の形成

近藤博基, 古田和也, 松井裕高, 坂下満男, 財満鎭明

信学技報   Vol. 109   page： 81-85   2009

LaAlO/Ge構造へのALD-Al2O3界面制御層挿入の効果

坂下満男, 加藤亮祐, 京極真也, 近藤博基, 財満鎭明

信学技報   Vol. 109   page： 61-66   2009

ラジカル窒化法によるHigh-k/Ge界面構造制御

加藤公彦, 近藤博基, 坂下満男, 財満鎭明

信学技報   Vol. 109   page： 39-44   2009

Effects of Atomic Layer Deposition-Al2O3 Interface Layers on Interfacial Properties of Ge Metal–Oxide–Semiconductor Capacitors Reviewed

R. Kato, S. Kyogoku, M. Sakashita, H. Kondo, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 48   page： 05DA04-1-4   2009

Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors Reviewed

K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa and S. Zaima

Jpn. J. Appl. Phys   Vol. 47 ( 4 ) page： 2420-2424   2008

Silicide and germanide technology for contacts and gates in MOSFET applications Reviewed

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa

  Vol. 517   page： 80-83   2008

Behavior of Local Charge Trapping Sites in La2O3-Al2O3 Composite Films under Constant Voltage Stress Reviewed

T. Sago, A. Seko, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

Jpn. J. Appl. Phys   Vol. 46 ( 4B ) page： 1879-1884   2007

Ge基板上へのPr酸化膜の作製と評価

坂下満男、鬼頭伸幸、酒井　朗、小川正毅、財満鎭明

信学技報   Vol. 107 ( 85 ) page： 107-111   2007

Composition Dependence of Work Function in Metal (Ni,Pt) Germanide Gate Electrodes Reviewed

D. Ikeno, Y. Kaneko, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 46 ( 4B ) page： 1865-1869   2007

Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition Reviewed

K. Ariyoshi, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 45   page： 2903-2907   2006

La2O3-Al2O3複合膜における定電圧ストレス印加時の局所的な電荷捕獲とその放出過程 Reviewed

佐合寿文, 世古明義, 坂下満男, 酒井朗, 小川正毅, 財満鎭明

信学技報   Vol. 106   page： 19   2006

Characterization of Local Current Leakage in La2O3-Al2O3 Composite Films by Conductive Atomic Force Microscopy Reviewed

A. Seko, T. Sago, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 45   page： 2954-2960   2006

電流検出型原子間力顕微鏡を用いた極薄ゲート絶縁膜の信頼性評価

世古明義, 坂下満男, 酒井朗, 財満鎭明

日本信頼性学会誌「信頼性」   Vol. 28 ( 3 ) page： 163-174   2006

Thermal Stability and Electrical Properties of (La2O3)1-x(Al2O3)x Composite Films Reviewed

R. Fujitsuka, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys.   Vol. 44   page： 2428-2432   2005

電流検出型原子間力顕微鏡を用いたLa2O3-Al2O3複合膜の局所リーク電流評価 Reviewed

世古明義, 佐合寿文, 藤塚良太, 坂下満男, 酒井朗, 小川正毅, 財満鎭明

信学技報   Vol. 104   page： 35   2005

Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals Reviewed

S. Naito, T. Ueyama, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 44   page： 5687-5691   2005

Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO2-TiO2 Composite Films Reviewed

K. Honda, A. Sakai, M. Sakashita, H. Ikeda, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys.   Vol. 43   page： 1571-1576   2004

Praseodymium silicate formed by postdeposition high-temperature annealing Reviewed

A. Sakai, S. Sakashita, M. Sakashita, Y. Yasuda, S. Zaima, and S. Miyazaki

Appl. Phys. Lett.   Vol. 85   page： 5322-5324   2004

HfO2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic Reviewed

R. Takahashi, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys.   Vol. 43   page： 7821-7825   2004

Growth of silicon nanocrystal dots with high number density by ultra-high vacuum chemical vapor deposition Reviewed

S. Naito, M. Satake, H. Kondo, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys.   Vol. 43   page： 3779-3783   2004

Epitaxial Growth Technique for Si1-xSnx Binary Alloy Thin Films Invited International conference

Masashi Kurosawa, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka

244th ECS Meeting  2023.10.10 

Seed-layer driven solid phase epitaxy of amorphous Ge1-xSnx layers on Si(001) substrates toward in-plane strain control International conference

Tatsuma Hiraide, Masashi Kurosawa, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka

2023 International Conference on Solid State Devices and Materials  2023.9.7 

Experimental observation of negative differential resistance in GeSn/GeSiSn double barrier structure toward resonant tunneling diode applications International conference

Shuto Ishimoto, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, and Shigehisa Shibayama

2023 International Conference on Solid State Devices and Materials  2023.9.7 

Optoelectronic properties of Ge1−xSnx/high-Si-content SiyGe1−y− zSnz double quantum wells formed by low-temperature MBE growth and post deposition annealing International conference

Shigehisa Shibayama, Shiyu Zhang, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka

2023 International Conference on Solid State Devices and Materials  2023.9.7 

Low-temperature thermoelectric power-factor enhancement of n-type Ge-rich Ge1-x-ySixSny layers International conference

Itsuki Sugimura, Masaya Nakata, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Takayoshi Katase, and Masashi Kurosawa

2023 International Conference on Solid State Devices and Materials  2023.9.7 

Giant thermoelectric power of n-type Si1-xSnx layers grown on FZ-Si(001) substrates International conference

Tatsuki Oiwa, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Takayoshi Katase, and Masashi Kurosawa

2023 International Conference on Solid State Devices and Materials  2023.9.7 

Heteroepitaxial Growth of High Substitutional Sn-content Ge1−xSnx Layer Lattice-matched on InP Substrate International conference

Osamu Nakatsuka, Komei Takagi, Shigehisa Shibayama, Masashi Kurosawa, and Mitsuo Sakashita

The International Conference on Silicon Epitaxy and Heterostructures and the International SiGe Technology and Device Meetings  2023.5.22 

Low-temperature Thermoelectric Properties of GeSn Alloys Films

M. Kurosawa, T. Katase, Y. Imai, M. Nakata, M. Kimura, T. Kamiya, S. Shibayama, M. Sakashita, and O. Nakatsuka

The International Conference on Silicon Epitaxy and Heterostructures and the International SiGe Technology and Device Meetings  2023.5.22 

Epitaxy and heterostructure of germanium tin-related group-IV alloy semiconductors for future electronic and optoelectronic applications Invited International conference

Osamu Nakatsuka, Masashi Kurosawa, Shigehisa Shibayama, and Mitsuo Sakashita

2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors  2023.5.15 

Potential of Silicon-Germanium-Tin Thin Films for Future Thermoelectric Device Applications Invited International conference

M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka

15th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 16th International Conference on Plasma-Nano Technology and Science (ISPlasma 2023 / IC-PLANTS 2023)  2023.3.8 

Challenge and new opportunity of Ge1-x-ySixSny/Ge1-xSnx heterostructures for optoelectronic and electronic device applications Invited International conference

S. Shibayama, S. Zhang, M. Sakashita, M. Kurosawa, and O. Nakatsuka

13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1.24 

Arising ferroelectric properties in ZrO2 thin film down to 4 nm International conference

S. Ikeguchi, J. Nagano, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Shibayama

13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1.23 

Development of accurate characterization technique of electrical properties in Ge1-xSnx-based group-IV epitaxial layers International conference

T. Mori, S. Shibayama, K. Nishizawa, M. Sakashita, M. Kurosawa, and O. Nakatsuka

13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1.23 

Crystalline and electrical properties of Ge1-x-ySixSny epitaxial layers - Effect of Si incorporation and H2 irradiation International conference

K. Nishizawa, S. Shibayama, T. Mori, M. Sakashita, M. Kurosawa, and O. Nakatsuka

13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1.24 

Heteroepitaxy of Ge1-xSnx with a high Sn content over 25% on InP(001) toward group-IV infrared detector International conference

K. Takagi, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka

13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1.23 

Epitaxial Germanide/Germanium Contact: Its Impact on Schottky Barrier Height Invited International conference

O. Nakatsuka, S. Shibayama, M. Sakashita, and M. Kurosawa

13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1.23 

Research and Development of GeSn-related Group-IV Semiconductor Heterostructures for Optoelectronic Applications Invited International conference

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

Symposium on Light Emission and Photonics of Group IV Semiconductor Nanostructures (LPGN)  2022.12.14 

Synthesis of multilayer two-dimensional group-IV flakes and nanosheets International conference

M. Kurosawa, M. Itoh, Y. Ito, K. Okada, A. Ohta, M. Araidai, Kosuke O. Hara, Y. Ando, S. Yamada, S. Shibayama, M. Sakashita, and O. Nakatsuka

the 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33)  2022.11.15 

Impact of Strain Structure in Epitaxial HfGe2/n-Ge(001) Contact on Morphology and Schottky Barrier Height International conference

O. Nakatsuka, Kentaro Kasahara, S. Shibayama, M. Sakashita, and M. Kurosawa

Advanced Metallization Conference 2022 31st Asian Session (ADMETA Plus 2022)  2022.10 

Study on doping by ion implantation to Si1-xSnx epitaxial layers International conference

T. Oiwa, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka

2022 International Conference on Solid State Devices and Materials (SSDM 2022)  2022.9 

Molecular beam epitaxy of Si1-xSnx layers with 10%-Sn content on Si1-yGey buffers International conference

K. Fujimoto, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka

2022 International Conference on Solid State Devices and Materials (SSDM 2022)  2022.9 

Formation of ferroelectric ZrO2 film in ultra-thin region by sputtering method International conference

S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka

2022 International Conference on Solid State Devices and Materials (SSDM 2022)  2022.9 

Substrate engineering for strain-controlled high-Sn-content Ge1-xSnx epitaxy International conference

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

The 6th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2022 (APAC-Silicide 2022)  2022.7 

Enhancement of the Field-Effect Mobility of 4H-SiC Buried Channel n-MOSFETs by Using Al2O3 as a Gate Insulator International conference

T. Doi, S. Shibayama, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka

2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2021 IWDTF) 

Optoelectronic properties of pseudo-direct transition n+-Ge1-xSnx and heterostructures composed of n+-Ge1-xSnx and n-SiyGe1-y International conference

S. Zhang, M. Sakashita, S. Shibayama, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021) 

Schottky barrier height lowering for metal/n-type 4H-SiC contacts using low work function metals International conference

T. Doi, S. Shibayama, M. Sakashita, M. Shimizu, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021) 

Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface International conference

E. Kagoshima, W. Takeuchi, K. Kutsuki, M. Sakashita, H. Fujiwara, and O. Nakatsuka

2021 International Conference on Solid State Devices and Materials (SSDM 2021) 

Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property Invited International conference

K. Kasahara, K. Senga, M. Sakashita, S. Shibayama, and O. Nakatsuka

20th International Workshop on Junction Technology 2021 (IWJT2021) 

Formation and Characterization of Ge1–x–ySixSny/Ge Heterojunction Structures for Photovoltaic Cell Application International conference

O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima

ECS Meeting 

Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Invited International conference

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

ECS Meeting 

Understanding wet annealing effect on phase transition and ferroelectric phase formation for Hf1-xZrxO2 film International conference

S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka

SSDM2020  2020.9.28 

In-situ Sb Doping into Ge1−xSnx Epitaxial Layer toward Enhancement of Photoluminescence Intensity International conference

M. Fukuda, J. Jeon, M. Sakashita, S. Shibayama, M. Kurosawa, and O. Nakatsuka

ISCSI-VIII 

Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices Invited International conference

O. Nakatsuka, M. Kurosawa, S. Shibayama, M. Sakashita and S. Zaima

ISCSI-VIII 

Ferroelectric Phase Evolution of Undoped ZrO2 Thin Film by Wet O2 Annealing Process International conference

S. Shibayama, J. Nagano, M. Sakashita, O. Nakatsuka

IWDTF 

Development of in-situ cyclic metal layer oxidation to form abrupt Al2O3/4H-SiC interface International conference

T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu and O. Nakatsuka

ICMaSS 

Optoelectronic Property of GeSn and GeSiSn Heterostructure International conference

M. Fukuda, M. Sakashita, S. Shibayama, M. Kurosawa, S. Zaima, and O. Nakatsuka

ICMaSS 

Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET International conference

W. Takeuchi, K. Kutsuki, E. Kagoshima, T. Onishi, S. Iwasaki, M. Sakashita, H. Fujiwara, and O. Nakatsuka

SSDM 

In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al2O3/4H-SiC(0001) Gate Stacks International conference

T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka

SSDM 

GeSn and GeSiSn Heterostructures for Optoelectronic Applications Invited International conference

O. Nakatsuka, M. Fukuda, M. Kurosawa, S. Shibayama, M. Sakashita, and S. Zaima

2019 IEEE Photonics Society Summer Topicals Meeting Series 

Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 International conference

K. Senga, S. Shibayama, M. Sakashita, S. Zaima, and O. Nakatsuka

19th International Workshop on Junction Technology 2019 (IWJT2019) 

Development and challenges of group-IV alloy semiconductors for nanoelectronic applications Invited International conference

S. Zaima, O. Nakatsuka, M. Kurosawa, M. Sakashita, and S. Shibayama

The Eleventh International Conference on High-Performance Ceramics (CICC-11) 

Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny QuantumWell Structures International conference

G. R. Suwito, M. Fukuda, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

Compoud Semiconductor Week 2019 (CSW 2019) 

GeSn-related group-IV semiconductor heterostructures for electronic and optoelectronic applications Invited International conference

O. Nakatsuka, M. Fukuda, M. Kurosawa, M. Sakashita, and S. Zaima

12th International WorkShop on New Group IV Semiconductor Nanoelectronics 

Formation and Optoelectronic Characterization of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-heterostructure International conference

M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

ACSIN-ICSPM 

Impact of Crystalline Property of SixGe1-x-ySny Ternary Alloy Interlayer on Schottky Barrier Height Engineering of Metal/Ge Contact International conference

O. Nakatsuka, A. Suzuki, M. Sakashita, and S. Zaima

ADMETA Plus 

Composition and Strain Engineering of New Group-IV Thermoelectric Materials Invited International conference

M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

ECS Meeting 

Growth and electronic properties of GeSn-related group-IV alloy semicondcutor thin films Invited International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

2018 International Conference on Solid State Devices and Materials (SSDM 2018) 

Impact of Oxygen Radical Treatment on Improvement of Al2O3/SiC Interface International conference

T. Doi, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

2018 International Conference on Solid State Devices and Materials (SSDM 2018) 

GeSn-based thin film thermoelectric generators Invited International conference

M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications  

Engineering optoelectronic properties of high-Sn-content GeSn, GeSiSn, and SiSn thin films Invited International conference

O. Nakatsuka, M. Kurosawa, M. Fukuda, M. Sakashita, W. Takeuchi, and S. Zaima

IEEE Photonics Society Summer Topical Meeting Series 2018 

Engineering electronic properties of GeSn-related group-IV thin films for nanoelectronic applications Invited International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

European Materials Research Society (2018 E-MRS Spring Meeting) 

Optoelectronic Characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure with High-Si-Content Ge1-x-ySixSny Layer International conference

M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima

1st Joint Conference ICSI / ISTDM 2018 

Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator International conference

K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa

The 2nd Electron Devices Technology and Manufacturing (EDTM 2018) 

Heterostructure Engineering of GeSn and SiGeSn Group-IV Alloy Semiconductor Layers Invited International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

11th International WorkShop on New Group IV Semiconductor Nanoelectronics 

Crystal growth of GeSn-based materials and its application for thin-film thermoelectric generators Invited International conference

M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

The 2017 Global Research Efforts on Energy and Nanomaterials (GREEN 2017) 

Characterization of Defects in Ge1-xSnx Gate Stack Structure International conference

Y. Kaneda, S. Ike, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2017 IWDTF) 

Development of GeSn-Related Group-IV Semiconductor Thin Films for Future Si Nanoelectronic Applications Invited International conference

S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, and M. Sakashita

the 4th International Symposium on Hybrid Materials and Processing (HyMaP 2017) 

GeSn and related group-IV alloy thin films for future Si nanoelectronics Invited International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita and S. Zaima

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita and S. Zaima 

Heavy n- and p-type doping for polycrystalline Ge1-xSnx layers using pulsed laser annealing in water International conference

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher  

Characterization of Crystallinity and Energy Band Alignment of Ge1-xSnx/Ge1-x-ySixSny Heterostructure International conference

M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017) 

Control of Electrical Property at Metal/Ge Interface with Group-IV Alloy Interlayer International conference

A. Suzuki, O. Nakatsuka, M. Sakashita, and S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017) 

Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water International conference

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

2017 International Conference on Solid State Devices and Materials (SSDM 2017) 

Research and development of GeSn-related thin-film semiconductors for nanoelectronic and optoelectronic Invited International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, S. Zaima

Frontiers in Materials Processing Applications, Research and Technology (FiMPART 2017) 

Development of GeSn and related semiconductor thin films for next generation optoelectronic applications Invited International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

2017 Global Conference on Polymer and Composite Materials (PCM 2017) 

Alleviation of Fermi level pinning at metal/Ge interface using lattice-matching group-IV ternary alloy interlayer International conference

A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

Control of lattice constant of Ge1-x-ySixSny layer for energy band engineering in Ge1-xSnx/Ge1-x-ySixSny heterostructure International conference

M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

Formation of heavily Sb and Ga doped poly-Ge1-xSnx layers on insulator using pulsed laser annealing in water International conference

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

Heavily p-type Doping to Si1-xSnx Layers Grown on SOI Substrates International conference

Y. Inaishi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 11th International Conference on Plasma-Nano Technology and Science (ISPlasma 2018 / IC-PLANTS 2018) 

Electrical Properties of AlON/4H-SiC MOS Capacitor Prepared by Plasma-Assisted Atomic Layer Deposition International conference

W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, O. Nakatsuka, and , S. Zaima

9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2016 / IC-PLANTS 2017) 

Effect of Oxynitridation Annealing for SiO2/SiC Interface on Defects Properties Invited International conference

W. Takeuchi, K. Yamamoto, M. Sakashita, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

Influence of atomic layer deposition temperature of GeO2 layer on electrical properties of Ge and Ge1-xSnx gate stack International conference

Y. Kaneda, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

Solid phase crystallization of Ge0.98Sn0.02 layers on various insulating substrates International conference

I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

Control of Schottky barrier height of metal/Ge contact using group-IV alloy interlayers International conference

A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima

JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration" 

Formation of heavily Sb doped poly-Ge1-xSnx layer using pulsed laser annealing in water International conference

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration" 

Characterization of Deep-Level Defects in Ge1-xSnx Epitaxial Layers using Deep Level Transient Spectroscopy International conference

W. Takeuchi, Y. Inuzuka, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima

The 7th International Symposium on Advanced Science and Technology of Silicon Materials (7th JSPS Silicon Symposium) 

Impact of SixGe1-x-ySny interlayer on reduction in Schottky barrier height of metal/n-Ge contact International conference

A. Suzuki, S. Toda, O. Nakatsuka, M. Sakashita, and S. Zaima

2016 International Conference on Solid State Devices and Materials (SSDM 2016) 

Heavy Sb-doping for poly-GeSn on insulator using pulsed laser annealing in water International conference

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

2016 International Conference on Solid State Devices and Materials (SSDM 2016) 

Effect of N bonding structure in AlON on leakage current of 4H-SiC MOS capacitor International conference

W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima

2016 International Conference on Solid State Devices and Materials (SSDM 2016) 

Challenges in Engineering Materials Properties for GeSn Nanoelectronics Invited International conference

S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita

The 2016 European Materials Research Society (E-MRS) Fall Meeting 

Growth and applications of GeSn-related group-IV semiconductor materials International conference

S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, Y. Shimura, and M. Sakashita

IEEE 2016 Summer Topicals Meeting Series 

Interfacial Energy Control for Low-Temperature Crystallization of Ge-rich GeSn Layers on Insulating Substrate International conference

I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

ISCSI-VII/ISTDM 2016 

Control of the Fermi level pinning position at metal/Ge interface by using Ge1-xSnx interlayer International conference

A. Suzuki, O. Nakatsuka, M. Sakashita, S. Zaima

ISCSI-VII/ISTDM 2016 

Development of GeSn thin film technology for electronic and optoelectronic applications International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima

2016 EMN Summer Meeting & Photodetectors Meeting 

Impact of Atomic Hydrogen Irradiation on Epitaxial Growth of Ge1-xSnx and its Crystalline Property International conference

S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, O. Nakatsuka, H. Kishida, S. Zaima

ISPlasma 2016 / IC-PLANTS 2016 

Solid phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of its crystalline and optical properties International conference

S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima

ISPlasma 2016 / IC-PLANTS 2016 

Control of Schottky barrier height at metal/Ge interface by insertion of Ge1-xSnx layer International conference

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa and S. Zaima

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping International conference

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers International conference

J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka and S. Zaima

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

Formation of poly-Si1-x-ySnxCy ternary alloy layer and characterization of its crystalline and optical properties International conference

S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

Schottky Barrier Engineering by Epitaxial Metal Germanide/Germanium Contacts International conference

O. Nakatsuka, Y. Deng, A. Suzuki, M. Sakashita, and S. Zaima

ISETS '15 

Characterization of electrically active defects in epitaxial GeSn/n-Ge junctions International conference

W. Takeuchi, Y. Inuzuka, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima

ISETS '15 

Control of Schottky Barrier Height at Metal/Ge Interface by SnxGe1-x Interlayer International conference

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

ISETS '15 

Electrical Characteristics of Ge pn-junction Diodes Prepared by Using Liquid Immersion Laser Doping International conference

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

ISETS '15 

Crystal growth and energy band engineering of group-IV semiconductor thin films for nanoelectronic applications International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima

IWAN 2015 

Influence of Atomic Layer Deposition Temperature of GeO2 Layer on Electrical Properties of Ge Gate Stack International conference

M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima

2015 IWDTF 

Evaluation of Energy Band Structure of Si1-xSnx by Density Functional Theory Calculation and Photoelectron Spectroscopy International conference

Y. Nagae, S. Shibayama, M. Kurosawa, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, S. Zaima

2015 IWDTF 

Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits International conference

S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita

The 228th Electrochemical Society Meeting 

Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform International conference

S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi and M. Sakashita

SSDM 2015 

Impact of Ultra-high Sn Content SnxGe1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface International conference

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa and S. Zaima

SSDM 2015 

Effect of Nitridation for SiO2/SiC Interface on Defects Properties near Conduction Band Edge International conference

W. Takeuchi, K. Yamamoto, M. Sakashita, T. Kanemura, O. Nakatsuka and S. Zaima

SSDM 2015 

Characterization of Deep-level Defects in Epitaxial Ge1-xSnx/Ge structure International conference

W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima

JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration 

Reduction of Schottky barrier height with Sn/Ge contact International conference

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, S. Zaima

JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration 

Development of polycrystalline Sn-related group-IV semiconductor thin films - Aiming for 3D-IC International conference

M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015) 

Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation International conference

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima

15th International Workshop on Junction Technology 2015 (IWJT 2015) 

Formation of type-I energy band alignment of Ge1-x-ySixSny/Ge hetero structure International conference

T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima

T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima 

Thermophysical characterizations of Ge1-xSnx epitaxial layers aiming for thermoelectric devices International conference

T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima

M. Kurosawa, M. Fukuda, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima 

Control of Electrically Active Defects in Ge1-xSnx Epitaxial Layers International conference

T. Asano, S. Shibayama, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima 

Electrically-Active Defects in Ge1-xSnx Epitaxtial Layer International conference

W. Takeuchi, T. Asano, M. Sakashita, O. Nakatsuka, S. Zaima

7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 8th International Conference  

Solid phase epitaxy of Ge1-x-ySnxCy ternary alloy layers International conference

H. Oda, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 8th International Conference  

Crystalline and Optical Properties of Ge1-x-ySixSny Ternary Alloy Layers for Solar Cell Application International conference

T. Yamaha, S. Asaba, T. Terashima, T. Asano, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

Behaviors of tin related defects in Sb doped n-type germanium International conference

W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka and S. Zaima

8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

Development of metal/Ge contacts for engineering Schottky barriers International conference

O. Nakatsuka, Y. Deng, A. Suzuki, S. Shibayama, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima

JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration" 

Formation of Epitaxial NiGe Layer on Ge(001) Substrate and Influence of Interface Structure on Schottky Barrier Height International conference

O. Nakatsuka, Y. Deng, M. Sakashita, and S. Zaima

Advanced Metallization Conference 2014: 24th Asian Session (ADMETA Plus 2014) in conjunction with the 3rd  

Low Schottky barrier height contacts with Sn electrode for various orientation n-Ge substrates International conference

A. Suzuki, D. Yunsheng, S. Shibayama, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

Advanced Metallization Conference 2014: 24th Asian Session (ADMETA Plus 2014) in conjunction with the 3rd  

Challenges and Developments in GeSn Process Technology for Si Nanoelectronics International conference

S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita

226th Meeting of The Electrochemical Society (ECS) and SMEQ (Sociedad Mexicana de Electroquímica) Joint  

Impact of Hydrogen Surfactant Epitaxy and Annealing on Crystallinity of Epitaxial Ge1-xSnx Layers International conference

2014 International Conference on Solid State Devices and Materials (SSDM 2014) 

Mobility behavior of Si1-x-yGexSny polycrystals grown on insulators International conference

International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014) 

Transformation of Defects Structure in Germanium by Sn Ion Implantation International conference

International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014) 

Crystalline Growth and Characterization of Group-IV Ternary Alloy Thin Films for Solar Cell International conference

T. Yamaha, K. Terasawa, T. Terashima, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

T. Yamaha, K. Terasawa, T. Terashima, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima 

Formation and Electrical Properties of Metal/Ge1-xSnx Contacts International conference

O. Nakatsuka, T. Nishimura, A. Suzuki, K. Kato, Y. Deng, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima

14th International Workshop on Junction Technology (IWJT 2014) 

Sn-related Group-IV semiconductor materials for electronic and optoelectronic applications International conference

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

3rd international Conference on Nanotek and Expo (Nanotek-2013) 

Development of Ge1-xSn and Ge1-x-ySixSny thin film materials for future electronic applications International conference

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima

3rd international Conference on Nanotek and Expo (Nanotek-2013) 

Quantitative Guideline for Formation of Ge MOS Interface with Low Interface State Density International conference

S. Shibayama, K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, S. Zaima

IWDTF2013 

Robustness of Sn Precipitation During Thermal Process of Ge1-xSnx International conference

K. Kato, T. Asano, N. Taoka, M. Sakashita, O. Nakatsuka, S. Zaima

IWDTF2013 

Interface Properties of Al2O3/Ge MOS Structures with Thin Ge Oxide Interfacial Layer Formed by Pulsed MOCVD International conference

T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, S. Zaima

IWDTF2013 

Heteroepitaxial Growth of Sn-Related Group-IV Materials On Si Platform for Microelectronic and Optoelectronic Applications:Challenges and Opportunities International conference

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita and S. Zaima

The 224th Electrochemical Society Meeting 

Reduction of Interface States Density due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface International conference

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima

The 224th Electrochemical Society Meeting 

Interaction between Sn atoms and Defects Introduced by Ion Implantation in Ge Substrate International conference

N. Taoka, M. Fukudome, T. Arahira, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

JSPS Core-to-Core Program Workshop - Atomically Controlled Processing for Ultralarge Scale Integration - 

Stabilization for Higher-k Films with Meta-Stable Crystalline Structure International conference

K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

JSPS Core-to-Core Program Workshop - Atomically Controlled Processing for Ultralarge Scale Integration - 

Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode International conference

A. Suzuki, S. Asaba, J. Yokoi, O. Nakatsuka, M. Kurosawa, K. Kato, M. Sakashita, N. Taoka and S. Zaima

2013 International Conference on Solid State Devices and Materials (SSDM 2013) 

Engineering of Energy Band Structure with Epitaxial Ge1-x-ySixSny/n-Ge Hetero Junctions for Solar Cell Applications International conference

S. Asaba, T. Yamaha, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima

2013 International Conference on Solid State Devices and Materials (SSDM 2013) 

Interaction of Sn atoms with Defects Introduced by Ion Implantation in Ge Substrate International conference

T. Arahira, M. Fukudome, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima

2013 International Conference on Solid State Devices and Materials (SSDM 2013) 

Function of Additional Element Incorporation for Tetragonal ZrO2 Formation International conference

K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

NIMS Conference 2013 -Structure Control of Atomic/Molecular Thin Films and Their Applications- 

Formation of Tetragonal ZrO2 Thin Film by ALD Method International conference

K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 

Control of Interfacial Reactions in Al2O3/Ge Structures International conference

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 

Lateral Growth Enhancement of Poly-Ge1-xSnx on SiO2 using a Eutectic Reaction International conference

M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 

Crystalline Phase Control of Pr-Oxide Films by Regulating Oxidant Partial Pressure and Si Diffusion International conference

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 

Impacts of AlGeO Formation by Post Thermal Oxidation of Al2O3/Ge Structure on Interface Properties International conference

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar 

Low temperature crystallization of group-IV semiconductors induced by eutectic metals (Al, Sn) International conference

M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima

6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar 

Feasibility of Ge Device Fabrication by Low Temperature Processes on ULSI Circuits International conference

N. Taoka, M. Kurosawa, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar 

Control of Al2O3/Ge interfacial structures by post oxidation technique using oxygen radical International conference

K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

Defects introduced in germanium substrate by reactive ion etching International conference

Kusumandari, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, S. Zaima

5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) 

Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical International conference

K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

International Conference on Solid State Devices and Materials 

High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization International conference

W. Takeuchi, N. Taoka, M. Kurosawa, M. Fukutome, M. Sakashita, O. Nakatsuka, and S. Zaima

International Conference on Solid State Devices and Materials 

Importance of Si Bandbending at Zero Bias Condition for Schottky Barrier Height Control at Metal/Si Interfaces with Ultra-thin Al2O3 Layer International conference

H. Matsushita, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima

IUMRS International Conference on Electronic Materials 

Thermal Oxidation Mechanism of Ge through Al2O3 Layer Formed on Ge Substrate International conference

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

IUMRS International Conference on Electronic Materials 

Epitaxial Growth and Characterizations of Ge1-xSnx and Ge1-x-ySixSny Thin Layers for Nanoelectronic and Optoelectronic Applications International conference

O. Nakatsuka, N. Taoka, M. Sakashita, W. Takeuchi, S. Zaima

University of Vigo and JSPS Core-to-Core Program Joint Seminar 

Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures International conference

Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

AWAD2012 

Potential of GeSn Alloys for Application to Si Nanoelectronics International conference

S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, O. Nakatsuka

2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 

Control of Interfacial and Electrical Properties of Metal/Pr-oxide/Ge Gate Stack Structures International conference

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

CNSE and JSPS Core-to-Core Program Joint Seminar 

Effect of Gate Metal Electrode on Chemical Bonding State in Metal/Pr-oxide/Ge Gate Stack Structure International conference

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

ISTDM2012 

Effect of N Radical Process on Interfacial and Electrical Properties of Al2O3/Ge Structure International conference

K.Kato, M.Sakashita, W.Takeuchi, O. Nakatsuka, and S.Zaima

IC-PLANTS 2012 

The effect of light exposure on the electrical properties of GeO2/Ge gate stack International conference

Kusumandari, W.Takeuchi, M.Sakashita, O.Nakatsuka, and S.Zaima

ISPlasma2012 

Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique International conference

K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

ICTF-15 

Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-Oxide Film International conference

W. Takeuchi, K. Furuta, K. Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima

Improvement of Al2O3 Interfacial Properties by O2 Annealing International conference

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

ICSI-7 

Effect of N Radical Process on Interfacial and Electrical Properties of Al2O3/Ge Structure International conference

K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

IC-PLANTS2011 

Characterization of Damages of Al2O3/Ge Gate Stacks Structure Induced with Light Radiation during Plasma Nitridation International conference

Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima

ISPLasma2011 

Influence of Light Radiation on Electrical Properties of Al2O3/Ge and GeO2/Ge Gate Stacks in Nitrogen Plasma International conference

Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima

IWDTF 

Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique International conference

K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, S. Zaima

IWDTF 

Study of Ge Surface Passivation using Radical Nitridation Technique for Ge Channel MOS Transistors International conference

K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima

The 1st Korea-Japan Symposium on Surface Technology 

Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy International conference

2010 International Conference on Solid State Devices and Materials (SSDM 2010) 

Effects of Al Incorporation into Pr-oxides Formed by Atomic Layer Deposition International conference

2010 International Conference on Solid State Devices and Materials (SSDM 2010) 

Nitrogen content dependence of crystalline and electrical properties of ternary transition metal gate electrodes International conference

International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE) 

Crystalline and electrical properties of PrAlO gate insulator films formed by atomic layer deposition International conference

International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE) 

Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen International conference

5th International SiGe Technology Device Meeting 2010 (ISTDM2010) 

Formation of Pr Oxide Films by Atomic Layer Deposition using Pr(EtCp)3 Precursor International conference

2009 International Conference on Solid State Devices and Materials (SSDM) 

LaAlO/Ge構造へのALD-Al2O3界面制御層挿入の効果

坂下満男, 加藤亮祐, 京極真也, 近藤博基, 財満鎭明

応用物理学会　シリコンテクノロジー分科会研究集会 

Pr-Oxide-Based Dielectric Films on Ge Substrates International conference

2007 International Conference on Solid State Devices and Materials 

Ge基板上に堆積したPr酸化物ゲート絶縁膜の角度分解XPSによる評価

坂下満男、鬼頭伸幸、酒井　朗、小川正毅、財満鎭明

第68回応用物理学会学術講演会 

Ge基板上へのPr酸化膜の作製と評価

坂下満男、鬼頭伸幸、酒井　朗、小川正毅、財満鎭明

応用物理学会　シリコンテクノロジー分科会研究集会 

Prシリケイト膜の結晶構造と電気的特性の熱処理依存性

坂下満男、山矢　隼、酒井　朗、小川正毅、財満鎭明

第52回応用物理学関係連合講演会 

結晶デバイスセミナー2E

2020

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2020

結晶デバイスセミナー2C

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結晶デバイスセミナー2B

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結晶デバイスセミナー1B

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物理工学実験第3

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