Updated on 2021/03/31

写真a

 
UJIHARA, Toru
 
Organization
Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section Professor
Title
Professor
Contact information
メールアドレス

Degree 1

  1. Doctor of Engineering ( 2000.3   Kyoto University ) 

Research Interests 1

  1. crystal growth, Solution growth, Vapor growth, SiC, Power device, Solar cell, Semiconductor photo-cathode, Spin observation, Bio-device, Semiconductor-Plasma membrane hybrid device, Lipid bilayer

Research Areas 3

  1. Others / Others  / Physical Metallurgy

  2. Others / Others  / Electronic and Electric Materials Engineering

  3. Others / Others  / Applied Physics of Property and Crystallography

Current Research Project and SDGs 5

  1. Growth of high-quality SiC crystal by liquid phase epitaxy

  2. AlNの高効率合成

  3. High performance spin-polarized electron source based on semiconductor photo-cathode

  4. Physics of quantum structure solar cell

  5. Phase separation and phase transition on lipid bilayer

Research History 12

  1. 株式会社アイクリスタル   取締役

    2019.11

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    Country:Japan

  2. 国立研究開発法人理化学研究所   革新知能統合研究センター   客員研究員

    2018.6

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    Country:Japan

  3. 公益財団法人名古屋産業科学研究所(名産研)   非常勤所員

    2018.4 - 2022.3

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    Country:Japan

  4. 株式会社U-MaP   取締役 CTO

    2016.11

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    Country:Japan

  5. 国立研究開発法人産業技術総合研究所(産総研)   エレクトロニクス・製造領域 研究戦略部 窒化物半導体先進デバイスオープンイノベーションラボラトリ   副ラボ長

    2016.11 - 2021.3

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    Country:Japan

  6. 名古屋大学未来材料・システム研究所 未来エレクトロニクス集積研究センター・教授

    2015.10

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    Country:Japan

  7. 名古屋大学グリーンモビリティ連携研究センター・教授

    2014.4 - 2015.9

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    Country:Japan

  8. 名古屋大学大学院工学研究科・教授

    2010.10

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    Country:Japan

  9. 名古屋大学大学院工学研究科附属バックキャストテクノロジー材料センター 准教授(兼任)

    2008.10

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    Country:Japan

  10. Associate Professor, Graduate School of Engineering, Nagoya University

    2007.4

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    Country:Japan

  11. Associate Professor, Graduate School of Engineering, Nagoya University

    2004.3 - 2007.3

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    Country:Japan

  12. Assistant Professor, Institute for Materials Research, Tohoku University

    1999.4 - 2004.2

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    Country:Japan

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Education 3

  1. Kyoto University   Graduate School, Division of Engineering   Material Science and Engineering

    1995.4 - 1999.3

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    Country: Japan

  2. Kyoto University   Graduate School, Division of Engineering

    1993.4 - 1995.3

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    Country: Japan

  3. Kyoto University   Faculty of Engineering

    1989.4 - 1993.3

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    Country: Japan

Professional Memberships 1

  1. 日本表面真空学会

Committee Memberships 44

  1. 第8回アジア結晶成長・結晶技術国際会議(CGCT-8)   実行委員  

    2021.3   

  2. 第49回結晶成長国内会議(JCCG-49)   プログラム委員  

    2020.11   

  3. ICMaSS2019プログラム委員会   委員  

    2019.11   

  4. アジア太平洋ワークショップ(APWS 2019) メンバー   プログラムメンバー  

    2019.11   

  5. ICSCRM2019 実行委員会   プログラム委員  

    2019.6 - 2019.10   

  6. 日本結晶成長学会 理事(副会長(兼)学会賞委員会・バルク成長分科会)   理事(副会長(兼)学会賞委員会・バルク成長分科会)  

    2019.4 - 2022.3   

  7. 2019年2020年 日本金属学会・日本鉄鋼協会講演大会   委員  

    2019.4 - 2021.3   

  8. 国立研究開発法人 科学技術振興機構(JST) ERATO   選考評価者  

    2018.7 - 2019.3   

  9. 一般社団法人電子情報技術産業協会(JEITA)半導体信頼性技術委員会「個別半導体(パワー系)信頼性試験規格PG」   客員委員  

    2018.4 - 2020.3   

  10. 一般社団法人電子情報技術産業協会(JEITA)半導体信頼性技術委員会「化合物パワー半導体信頼性技術WG」   客員委員  

    2018.4 - 2020.3   

  11. プロセス研究会   会員  

    2017.4   

  12. 公益社団法人日本金属学会分科会   委員  

    2017.4 - 2019.3   

  13. NEDO技術委員会   NEDO技術委員   

    2015.9 - 2017.3   

  14. 平成27年度地域経済産業活性化対策調査技術審査委員会   審査委員  

    2015.7 - 2016.3   

  15. 公益財団法人名古屋産業科学研究所   非常勤所員  

    2014.12   

  16. ICCGE-18実行委員会   委員  

    2014.9 - 2016.8   

  17. 第53,54期 応用物理学会   代議員  

    2014.2 - 2016.1   

  18. ISPlasma2014/IC-PLANTS2014プログラム委員会   委員  

    2013.5 - 2014.3   

  19. ICSCRM2013 実行委員会   実行委員  

    2012.3 - 2014.3   

  20. 第51,52期 応用物理学会   代議員  

    2012.2 - 2014.1   

  21. SSDM2012 国際固体素子材料コンファレンス   論文委員  

    2012.2 - 2012.12   

  22. 日本金属学会東海支部   理事  

    2011.4 - 2012.3   

  23. SSDM2011 国際固体素子材料コンファレンス   論文委員  

    2010.12 - 2011.11   

  24. 日本学術振興会 水の先進理工学 第183委員会   運営委員  

    2010.10   

  25. 日本学術振興会 結晶成長の科学と技術 第161委員会   運営委員  

    2010.8   

  26. InP関連材料国際会議プログラム   委員  

    2009.9   

  27. 第39回結晶成長国内会議   実行委員  

    2009.6 - 2009.11   

  28. 知的クラスター創成事業基礎教育セミナー   企画担当  

    2009.4   

  29. 日本金属学会東海支部   評議委員  

    2009.4 - 2011.3   

  30. 第二回おもしろ科学教室実行委員会   メンバー  

    2009.1   

  31. おもしろ科学館イン瑞浪2008実行委員会   実行メンバー  

    2008.9 - 2008.10   

  32. HACCP対応抗菌環境福祉材料開発研究会   委員  

    2008.4 - 2010.3   

  33. 「安心・安全・信頼のための抗菌材料」編集委員会   編集委員  

    2008.4 - 2010.3   

  34. 「分散量子ドット及び蛍光体を用いた広帯域光源の開発」プロジェクト形成委員会   委員  

    2008.4 - 2009.3   

  35. 第69回応用物理学会学術講演会現地実行委員会   委員  

    2007.7 - 2008.9   

  36. 公益社団法人応用物理学会東海支部   幹事  

    2007.4   

  37. 2007年日本金属学会・日本鉄鋼協会秋期大会実行委員会   委員  

    2007.3 - 2007.10   

  38. 日本結晶成長学会 学会誌編集委員   学会誌編集委員  

    2006.11 - 2010.3   

  39. 日本結晶成長学会   理事  

    2006.4   

  40. 名古屋大学21世紀COE「自然に学ぶ材料プロセッシングの創成」教科書編集委員会   編集委員  

    2006.4 - 2007.3   

  41. 日本金属学会東海支部若手材料研究会   幹事  

    2005.4   

  42. 日本金属学会会報編集委員会   編集委員  

    2005.4 - 2007.3   

  43. 日本学術振興会 次世代の太陽電池システム 第175委員会   学界委員  

    2004.10   

  44. 日本物理学会   世話人  

    2004.5 - 2005.4   

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Awards 23

  1. 第41回応用物理学会論文賞「応用物理学会論文奨励賞」

    2019   応用物理学会講  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

    小久保信彦

  2. 17th International Conference on Organized Molecular Films(ICOMF17)

    2018.7   DNA-controlled assembly of 2D nanoparticle lattices on lipid bilayer

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    Award type:Award from international society, conference, symposium, etc.  Country:United States

  3. 第65回春季学術講演会 「応用物理学会講演奨励賞」

    2018.3   応用物理学会講   ラマン分光法によるGaN単結晶における貫通転位の歪み場解析

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

    小久保信彦

  4. 日本結晶成長学会 「講演奨励賞」  " Students Award "

    2017.12   日本結晶成長学会   機械学習による熱流体解析の高速化における予測精度

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

    畑佐豪記,角岡洋介,村井良多,村山健太,朱燦,原田俊太,田川美穂,宇治原徹

  5. 先進パワー半導体分科会 第4回講演会「研究奨励賞」

    2017.11   先進パワー半導体分科会   ラマン分光法によるGaN単結晶における貫通転位の刃状成分の解析

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

    小久保信彦,角岡洋介,藤榮文博,大原淳士,原一都,恩田正一,山田永,清水三聡,原田俊太,田川美穂,宇治原徹

  6. 博士課程教育リーディングプログラム フォーラム2017  " Students Award "

    2017.10   名古屋大学   SiC 溶液成長における機械学習を用いた溶液温度・流速分布のリアルタイム可視化

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  7. ICSCRM2017 Student Poster Award

    2017.9   ICSCRM2017   irect Observation of Stacking Faults Expansion in 4H-SiC at High Temperatures by In Situ X-Ray Topography

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    Award type:Award from international society, conference, symposium, etc.  Country:United States

  8. 日本金属学会第29回「優秀ポスター賞」

    2017.9   日本金属学会   単結晶Cu集電体を用いた金属Li負極の不均一析出抑制

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

    石川晃平,原田俊太,田川美穂,宇治原徹

  9. 第40回結晶成長討論会 優秀ポスター賞

    2017.9   結晶成長討論会   SiC溶液成長における機械学習を用いた閉鎖空間の溶液温度・流速分布の予測

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

    畑佐豪記,角岡洋介,村井良多,村山健太,原田俊太,田川美穂,宇治原徹

  10. photo contest award the 18th International Conference on Crystal Growth and Epitaxy

    2016.8   18th International Conference on Crystal Growth and Epitaxy   Morphology of AlN whiskers grown by reacting N2 gas and Al vapor

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    Award type:Award from international society, conference, symposium, etc.  Country:Japan

  11. ICSCRM2015 Student Poster Award

    2015.10   ICSCRM2015   Distribution of nitrogen doping concentration in 4H-SiC grown by solution method

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    Award type:Award from international society, conference, symposium, etc.  Country:Italy

    Wang Zhenjiang

  12. 社団法人未踏科学技術協会 超伝導科学技術研究会 第15回超伝導科学技術賞

    2011   社団法人未踏科学技術協会  

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    Country:Japan

    生田博志, 宇治原徹, 田渕雅夫, 竹田美和, 「鉄系超伝導体LnFeAs(O,F)の分子線エピキタシー成長に関する先駆的研究」

  13. 第28回応用物理学会講演奨励賞

    2010.9   応用物理学会  

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    Country:Japan

    川口昂彦, 上村彦樹, 大野俊也, 田渕雅夫, 宇治原徹, 竹中康司, 竹田美和, 生田博志受賞論文「MBE法によるNdFeAs(O,F)超伝導薄膜の成長と物性評価」

  14. 第90春季年会優秀講演賞(学術)、2010年

    2010.3   日本化学会  

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    Country:Japan

    手老龍吾、佐崎元、宇治原徹、宇理須恒雄受賞論文「一分子蛍光追跡法による脂質二重膜中の幅広い時間・空間スケールでの分子拡散挙動のその場観察」

  15. 日本金属学会・日本鉄鋼協会東海支部 優秀ポスター賞

    2010   日本金属学会・日本鉄鋼協会東海支部  

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    水野恒平, 宇治原徹, 竹田美和, 青木祐一, 竹内幸久, 井上哲, 「液相法によるAlN多結晶体合成とMg添加効果」

  16. 応用物理学会論文賞

    2009.9   応用物理学会  

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    Country:Japan

  17. 19回学生による材料フォーラムで優秀ポスター賞

    2009   日本金属学会・日本鉄鋼協会 東海支部  

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    Country:Japan

    森本海、関和明、徳永智春、宇治原徹、佐々木勝寛、黒田光太郎、溶液成長によってCVD製3C-SiC基板上に成長させた結晶のTEM解析

  18. 日本金属学会2006年春季講演大会 第6回優秀ポスター賞

    2006   日本金属学会  

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    Country:Japan

    共著: 前川諒介, 宇治原徹, 竹田美和

  19. 第3回日本結晶成長学会奨励賞

    2005   日本結晶成長学会  

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    Country:Japan

  20. 第16回応用物理学会講演奨励賞

    2004   応用物理学会  

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    Country:Japan

    佐藤祐輔, 宇治原徹, 藩伍根,藤原航三, 佐崎元, 宇佐美徳隆, 中嶋一雄受賞論文「LPE法により作製したSi結晶の太陽電池特性と低温成長の有効性」

  21. 第43回原田研究奨励賞

    2003   公益財団法人本多記念会  

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    Country:Japan

  22. 第13回日本金属学会奨励賞 「材料プロセッシング分野」

    2003   日本金属学会  

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    Country:Japan

  23. 応用物理学会講演奨励賞

    2002   応用物理学会  

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    Country:Japan

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Papers 251

  1. Detection and classification of dislocations in GaN by optical microscope using birefringence

    Atsushi Tanaka, Shunta Harada, Kenji Hanada, Yoshio Honda, Toru Ujihara, and Hiroshi Amano,

    Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV   ( 117060Y )   2021.3

  2. Analysis of dislocation line tilt in GaN single crystal by Raman spectroscopy

    Kokubo Nobuhiko, Tsunooka Yosuke, Inotsume Sho, Fujie Fumihiro, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SA )   2021.1

  3. Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth

    Yifan Dang, Can Zhu, Motoki Ikumi, Masaki Takaishi, Wancheng Yu, Wei Huang, Xinbo Liu, Kentaro Kutsukake, Shunta Harada, Miho Tagawa and Toru Ujihara

    CrystEngComm   Vol. 23 ( (8) )   2021.1

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  4. Geometrical design of a crystal growth system guided by a machine learning algorithm

    Wancheng Yu, Can Zhu, Yosuke Tsunooka, Wei Huang, Yifan Dang, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara

    CrystEngComm     2021

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  5. Explainable machine learning for the analysis of transport phenomena in top-seeded solution growth of SiC single crystal

    Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

    JOURNAL OF THERMAL SCIENCE AND TECHNOLOGY   Vol. 16 ( 1 )   2021

  6. Adaptive Bayesian optimization for epitaxial growth of Si thin films under various constraints

    Osada Keiichi, Kutsukake Kentaro, Yamamoto Jun, Yamashita Shigeo, Kodera Takashi, Nagai Yuta, Horikawa Tomoyuki, Matsui Kota, Takeuchi Ichiro, Ujihara Toru

    MATERIALS TODAY COMMUNICATIONS   Vol. 25   2020.12

  7. Optimal Control of SiC Crystal Growth in the RF-TSSG System Using Reinforcement Learning

    Wang Lei, Sekimoto Atsushi, Takehara Yuto, Okano Yasunori, Ujihara Toru, Dost Sadik

    CRYSTALS   Vol. 10 ( 9 )   2020.9

  8. Plasmonic Manipulation of Sodium Chlorate Chiral Crystallization: Directed Chirality Transfer via Contact-Induced Polymorphic Transformation and Formation of Liquid Precursor

    Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Ujihara Toru, Omatsu Takashige, Miyamoto Katsuhiko, Yoshikawa Hiroshi Y., Kawamura Ryuzo, Nozawa Jun, Okada Junpei T., Uda Satoshi

    CRYSTAL GROWTH & DESIGN   Vol. 20 ( 8 ) page: 5493 - 5507   2020.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acs.cgd.0c00693

    Web of Science

  9. Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography

    Fujie Fumihiro, Harada Shunta, Hanada Kenji, Suo Hiromasa, Koizumi Haruhiko, Kato Tomohisa, Tagawa Miho, Ujihara Toru

    ACTA MATERIALIA   Vol. 194   page: 387 - 393   2020.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.actamat.2020.04.019

    Web of Science

  10. Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

    Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201900553

    Web of Science

  11. Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

    Inotsume Sho, Kokubo Nobuhiko, Yamada Hisashi, Onda Shoichi, Kojima Jun, Ohara Junji, Harada Shunta, Tagawa Miho, Ujihara Toru

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssb.201900527

    Web of Science

  12. Effect of Crystal Orientation of Cu Current Collectors on Cycling Stability of Li Metal Anodes

    Ishikawa Kohei, Harada Shunta, Tagawa Miho, Ujihara Toru

    ACS APPLIED MATERIALS & INTERFACES   Vol. 12 ( 8 ) page: 9341 - 9346   2020.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsami.9b22157

    Web of Science

  13. Bayesian optimization for a high- and uniform-crystal growth rate in the top-seeded solution growth process of silicon carbide under applied magnetic field and seed rotation

    Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

    JOURNAL OF CRYSTAL GROWTH   Vol. 532   2020.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.125437

    Web of Science

  14. Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field

    Wang Lei, Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

    CRYSTALS   Vol. 10 ( 2 )   2020.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/cryst10020111

    Web of Science

  15. Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3

    Hisashi Yamada, Sho Inotsume, Naoto Kumagai, Toshikazu Yamada, Mitsuaki Shimizu

    Phys. Status Solidi B   Vol. 257 ( 2 ) page: 1900318   2020

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1002/pssb.201900318

  16. Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal

    Liu Xinbo, Zhu Can, Harada Shunta, Tagawa Miho, Ujihara Toru

    CRYSTENGCOMM   Vol. 21 ( 47 ) page: 7260 - 7265   2019.12

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    DOI: 10.1039/c9ce01338e

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  17. Semi in-situ measurement of zincate ion concentration near zinc anode using background-oriented Schlieren technique

    Ito Yasumasa, Liang Xiao, Ishikawa Kohei, Ujihara Toru, Sakai Yasuhiko, Iwano Koji

    PHYSICAL REVIEW RESEARCH   Vol. 1 ( 3 )   2019.12

  18. Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method

    Wang L., Horiuchi T., Sekimoto A., Okano Y., Ujihara T., Dost S.

    JOURNAL OF CRYSTAL GROWTH   Vol. 520   page: 72 - 81   2019.8

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    DOI: 10.1016/j.jcrysgro.2019.05.017

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  19. Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process

    Horiuchi Takashi, Wang Lei, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

    JOURNAL OF CRYSTAL GROWTH   Vol. 517   page: 59 - 63   2019.7

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    DOI: 10.1016/j.jcrysgro.2019.04.001

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  20. In Situ Microscopic Observation on Surface Kinetics in Optical Trapping-Induced Crystal Growth: Step Formation, Wetting Transition, and Nonclassical Growth

    Niinomi Hiromasa, Sugiyama Teruki, Ujihara Toru, Guo Suxia, Nozawa Jun, Okada Junpei, Omatsu Takashige, Uda Satoshi

    CRYSTAL GROWTH & DESIGN   Vol. 19 ( 7 ) page: 4138 - 4150   2019.7

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    DOI: 10.1021/acs.cgd.9b00600

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  21. Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4HSiC Wafer Fabricated by the Solution Growth Method

    Kazuaki Seki, Kazuhiko Kusunoki, Shinsuke Harada, Toru Ujihara

    Mater. Sci. Forum   Vol. 963   page: 80-84   2019.7

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    DOI: https://doi.org/10.4028/www.scientific.net/MSF.963.80

  22. Nondestructive visualization of threading dislocations in GaN by micro raman mapping

    Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

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    DOI: 10.7567/1347-4065/ab0acf

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  23. The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide

    Horiuchi Takashi, Wang Lei, Sekimoto Atsushi, Okano Yasunori, Yamamoto Takuya, Ujihara Toru, Dost Sadik

    CRYSTAL RESEARCH AND TECHNOLOGY   Vol. 54 ( 5 )   2019.5

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    DOI: 10.1002/crat.201900014

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  24. Plasmonic Trapping-Induced Crystallization of Acetaminophen

    Niinomi Hiromasa, Sugiyama Teruki, Uda Satoshi, Tagawa Miho, Ujihara Toni, Miyamoto Katsuhiko, Omatsu Takashige

    CRYSTAL GROWTH & DESIGN   Vol. 19 ( 2 ) page: 529-537   2019.2

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    DOI: 10.1021/acs.cgd.8b01361

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  25. 機械学習を用いた結晶成長予測モデルの構築とその応用

    宇治原 徹, 角岡 洋介, 畑佐 豪記, 沓掛 健太朗, 石黒 祥生, 村山 健太, 鳴海 大翔, 原田 俊太, 田川 美穂

    表面と真空   Vol. 62 ( 3 ) page: 136-140   2019

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    DOI: 10.1380/vss.62.136

  26. 少量添加で樹脂素材の熱伝導率を向上させるAlNウィスカーフィラーの開発

    宇治原 徹

    エレクトロニクス実装学会誌   Vol. 22 ( 3 ) page: 195-198   2019

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    DOI: 10.5104/jiep.22.195

  27. 結晶成長学的見地による金属負極の析出形態と結晶方位の相関解明

    石川 晃平, 三橋 貴仁, 伊藤 靖仁, 竹内 幸久, 原田 俊太, 田川 美穂, 宇治原 徹

    日本結晶成長学会誌   Vol. 46 ( 1 ) page: 136-140   2019

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    DOI: 10.19009/jjacg.46-1-08

  28. Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC

    Wang Lei, Horiuchi Takashi, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

    JOURNAL OF CRYSTAL GROWTH   Vol. 498   page: 140 - 147   2018.9

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    DOI: 10.1016/j.jcrysgro.2018.06.017

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  29. In Situ Observation of Chiral Symmetry Breaking in NaClO3 Chiral Crystallization Realized by Thermoplasmonic Micro-Stirring

    Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Harada Shunta, Ujihara Tom, Uda Satoshi, Miyamoto Katsuhiko, Omatsu Takashige

    CRYSTAL GROWTH & DESIGN   Vol. 18 ( 8 ) page: 4230 - 4239   2018.8

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    DOI: 10.1021/acs.cgd.8b00420

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  30. Development of angle-resolved spectroscopy system of electrons emitted from a surface with negative electron affinity state

    Ichihashi Fumiaki, Dong Xinyu, Inoue Akito, Kawaguchi Takahiko, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Toru

    REVIEW OF SCIENTIFIC INSTRUMENTS   Vol. 89 ( 7 )   2018.7

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    DOI: 10.1063/1.5021116

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  31. Detection of edge component of threading dislocations in GaN by Raman spectroscopy

    Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Hara Kazukuni, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 6 )   2018.6

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    DOI: 10.7567/APEX.11.061002

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  32. Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method

    K. Murayama, S. Harada, F. Fujie, X. Liu, R. Murai, C. Zhu, K. Hanada, M. Tagawa, T. Ujihara

    Mater. Sci. Forum   Vol. 924   page: 60-63   2018

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    DOI: https://doi.org/10.4028/www.scientific.net/MSF.924.60

  33. Dislocation Behavior in Bulk Crystals Grown by TSSG Method

    K. Seki, K. Kusunoki, Y. Kishida, H. Kaido, K. Moriguchi, M. Kado, H. Daikoku, T. Shirai, M. Akita, A. Seki, H. Saito, S. Harada, T. Ujihara

    Mater. Sci. Forum   Vol. 924   page: 39-42   2018

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    DOI: https://doi.org/10.4028/www.scientific.net/MSF.924.39

  34. Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation

    F. Fujie, S. Harada, H. Koizumi, K. Murayama, K. Hanada, M. Tagawa, T. Ujihara

    Appl. Phys. Lett   Vol. 113   page: 012101   2018

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    DOI: https://doi.org/10.1063/1.5038189

  35. Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

    N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M.Shimizu, S. Harada, M. Tagawa, T. Ujihara

    Appl. Phys. Express   Vol. 11   page: 111001   2018

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    DOI: http://iopscience.iop.org/article/10.7567/APEX.11.111001

  36. Improvement mechanism of sputtered AlN films by high-temperature annealing

    S. Xiao, R. Suzuki, H. Miyake, S. Harada, T. Ujihara

    J. Cryst. Growth   Vol. 502   page: 41-44   2018

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    DOI: https://doi.org/10.1016/j.jcrysgro.2018.09.002

  37. High-speed prediction of computational fluid dynamics simulation in crystal growth

    Y. Tsunooka, N. Kokubo, G. Hatasa, S. Harada, M. Tagawa, T. Ujihara

    CrystEngComm   Vol. 20   page: 6546 - 6550   2018

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    DOI: https://doi.org/10.1039/C8CE00977E

  38. Importance of Hydration State around Proteins Required to Grow High-Quality Protein Crystals

    H. Koizumi, S. Uda, K. Tsukamoto, K. Kojima, M. Tachibana, T. Ujihara

    Cryst. Growth Des   Vol. 18   page: 4749-4755   2018

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    DOI: 10.1021/acs.cgd.8b00798

  39. Coherent pulse beam in spin-polarized TEM using an NEA photocathode

    Kuwahara M., Ujihara T., Saitoh K., Tanaka N.

    2018 31ST INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC)     page: .   2018

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  40. Temperature dependence of carrier relaxation time in gallium phosphide evaluated by photoemission measurements

    Ichihashi Fumiaki, Kawaguchi Takahiko, Dong Xinyu, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Toru

    AIP ADVANCES   Vol. 7 ( 11 )   2017.11

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    DOI: 10.1063/1.4997800

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  41. Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method

    Yamamoto Takuya, Adkar Nikhil, Okano Yasunori, Ujihara Toru, Dost Sadik

    JOURNAL OF CRYSTAL GROWTH   Vol. 474   page: 50-54   2017.9

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    DOI: 10.1016/j.jcrysgro.2016.12.086

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  42. Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation

    Yamamoto Takuya, Okano Yasunori, Ujihara Toru, Dost Sadik

    JOURNAL OF CRYSTAL GROWTH   Vol. 470   page: 75-88   2017.7

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    DOI: 10.1016/j.jcrysgro.2017.04.016

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  43. Morphology of AlN whiskers grown by reacting N-2 gas and Al vapor

    Matsumoto M., Saitou H., Takeuchi Y., Harada S., Tagawa M., Ujihara T.

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 576-580   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.11.127

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  44. Phase transition process in DDAB supported lipid bilayer

    Isogai Takumi, Nakada Sakiko, Yoshida Naoya, Sumi Hayato, Tero Ryugo, Harada Shunta, Ujihara Toru, Tagawa Miho

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 88-92   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.09.063

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  45. Two-step SiC solution growth for dislocation reduction

    Murayama K., Hori T., Harada S., Xiao S., Tagawa M., Ujihara T.

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 874-878   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.11.100

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  46. SiC solution growth on Si face with extremely low density of threading screw dislocations for suppression of polytype transformation

    "K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara"

    Mater. Sci. Forum   Vol. 897   page: 24-27   2017.5

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    DOI: DOI:10.4028/www.scientific.net/MSF.897.24

  47. Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth

    "T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara"

    Mater. Sci. Forum   Vol. 897   page: 28-31   2017.5

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    DOI: DOI: 10.4028/www.scientific.net/MSF.897.28

  48. Solvent design for high-purity SiC solution growth

    "S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara"

    Mater. Sci. Forum   Vol. 897   page: 32-35   2017.5

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    DOI: DOI: 10.4028/www.scientific.net/MSF.897.32

  49. Crystal Orientation Dependence of Precipitate Structure of Electrodeposited Li Metal on Cu Current Collectors

    Ishikawa Kohei, Ito Yasumasa, Harada Shunta, Tagawa Miho, Ujihara Toru

    CRYSTAL GROWTH & DESIGN   Vol. 17 ( 5 ) page: 2379-2385   2017.5

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    DOI: 10.1021/acs.cgd.6b01710

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  50. Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaCIO3 Unsaturated Mother Solution

    Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Maruyama Mihoko, Ujihara Toru, Omatsu Takashige, Mori Yusuke

    CRYSTAL GROWTH & DESIGN   Vol. 17 ( 2 ) page: 809-818   2017.2

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    DOI: 10.1021/acs.cgd.6b01657

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  51. Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents

    Komatsu Naoyoshi, Mitani Takeshi, Hayashi Yuichiro, Kato Tomohisa, Harada Shunta, Ujihara Toru, Okumura Hajime

    JOURNAL OF CRYSTAL GROWTH   Vol. 458   page: 37-43   2017.1

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    DOI: 10.1016/j.jcrysgro.2016.10.045

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  52. Phase transition process in DDAB supported lipid bilayer

    "T. Isogai, S. Nakada, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa"

    J. Cryst. Growth   Vol. 468   page: 88-92   2017

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    DOI: http://dx.doi.org/10.1016/j.jcrysgro.2016.09.063

  53. Septin Interferes with the Temperature-Dependent Domain Formation and Disappearance of Lipid Bilayer Membranes

    "S. Yamada, T. Isogai, R. Tero, Y. Tanaka-Takiguchi, T. Ujihara, M. Kinoshita, K. Takiguchi"

    Langmuir     page: 12823–12832   2016.11

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    DOI: doi:10.1021/acs.langmuir.6b03452

  54. Conversion behavior of threading screw dislocations on C face with different surface morphology during 4H-SiC solution growth

    "S. Xiao, S. Harada, K. Murayama, M. Tagawa, T. Ujihara"

    Cryst. Growth Des.     page: 6436–6439   2016.10

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    DOI: doi:10.1021 / acs.cgd.6b01107

  55. Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO 3 solution containing Ag nanoparticles

    "H. Niinomi, T. Sugiyama, M. Tagawa, K. Murayama, S. Harada, T. Ujihara"

    CrystEngComm   Vol. 18 ( 39 ) page: 7441-7448   2016.7

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    DOI: doi: 10.1039/c6ce01464j

  56. Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis

    "S. Xiao, S. Harada, K. Murayama, T. Ujihara"

    Cryst. Growth Des.   Vol. 16 ( 9 ) page: 5136-5140   2016.7

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  57. Effect of magnesium ion concentration on two-dimensional structure of DNA-functionalized nanoparticles on supported lipid bilayer

    "T. Isogai, E. Akada, S. Nakada, N. Yoshida, R. Tero, S. Harada, T. Ujihara, M. Tagawa"

    Japanese Journal of Applied Physics   Vol. 55 ( 3S2 ) page: 03DF11   2016.3

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  58. The Boersch effect in a picosecond pulsed electron beam emitted from a semiconductor photocathode Reviewed

    Makoto Kuwahara, Yoshito Nambo, Kota Aoki, Kensuke Sameshima, Xiuguang Jin, Toru Ujihara, Hidefumi Asano, Koh Saitoh, Yoshikazu Takeda and Nobuo Tanaka

    Appl. Phys. Lett.   Vol. 109   page: 013108   2016

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    DOI: doi:10.1063/www.dx.doi.org/1.4955457

  59. Spatial Distribution of Carrier Concentration in 4H-SiC Crystal Grown by Solution Method Reviewed

    Z. Wang, T. Kawaguchi, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Kato, T. Ujihara

    Mater. Sci. Forum,   Vol. 858   page: 57-60   2016

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    DOI: doi:MSF.858.57

  60. High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent Reviewed

    S. Watanabe, M. Nagaya, Y. Takeuchi, K. Aoyagi, K. Aoyagi, S. Harada, M. Tagawa, T. Ujihara

    Mater. Sci. Forum,   Vol. 858   page: 1210-1213   2016

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    DOI: doi:MSF.858.1210

  61. Analysis of the carbon transport near the growth interface with respect to the rotational speed of the seed crystal during top-seeded solution growth of SiC

    "T. Umezaki, D. Koike, S. Harada, T. Ujihara"

    Japanese Journal of Applied Physics   Vol. 55 ( 12 ) page: 125601   2016

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  62. Two-step SiC solution growth for dislocation reduction

    "K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara"

    J. Cryst. Growth     2016

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    DOI: http://dx.doi.org/10.1016/j.jcrysgro.2016.11.100

  63. Morphology of AlN whiskers grown by reacting N 2 gas and Al vapor

    "M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara"

    J. Cryst. Growth     2016

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    DOI: doi:10.1016/j.jcrysgro.2016.11.127

  64. Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaClO3 Unsaturated Mother Solution

    "H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, T. Ujihara, T.Omatsu, Y. Mori"

    Cryst. Growth Des.     2016

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    DOI: doi:10.1021/acs.cgd.6b01657

  65. Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO3 solution containing Ag nanoparticles

    "H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, S. Harada, T. Ujihara"

    CrystEngComm   Vol. 18   page: 7441-7448   2016

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  66. Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents

    "A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara"

    Jpn. J. Appl. Phys   Vol. 55   page: 01AC01   2016

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    DOI: http://doi.org/10.7567/JJAP.55.01AC01

  67. Research on solvent composition for different surface morphology on C face during 4H-SiC solution growth Reviewed

    Shiyu Xiao, Natsumi Hara, Shunta Harada, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai and Toru Ujihara

    Materials Science Forum   Vol. 821-823   page: 39-42   2015

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    DOI: doi:10.4028/www.scientific.net/MSF.821-823.39

  68. Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-axis Seeds Reviewed

    Tomonori Umezaki, Daiki Koike, Shunta Harada and Toru Ujihara

    Materials Science Forum   Vol. 821-823   page: 31-34   2015

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    DOI: doi:10.4028/www.scientific.net/MSF.821-823.31

  69. Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC Reviewed

    Kuniharu Fujii, Koichi Takei, Masahiro Aoshima, Nachimuthu Senguttuvan, Masahiko Hiratani, Toru Ujihara, Yuji Matsumoto, Tomohisa Kato, Kazuhisa Kurashige and Hajime Okumura

    Materials Science Forum   Vol. 821-823   page: 35-38   2015

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    DOI: doi:10.4028/www.scientific.net/MSF.821-823.35

  70. 3C-SiC Crystal on Sapphire by Solution Growth Method Reviewed

    Kenji Shibata, Shunta Harada and Toru Ujihara

    Materials Science Forum   Vol. 821-823   page: 185-188   2015

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    DOI: doi:10.4028/www.scientific.net/MSF.821-823.185

  71. 4H-SiC Growth from Si-Cr-C Solution under Al and N Co-doping Conditions Reviewed

    Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, and Hajime Okumura

    Mater. Sci. Forum,   Vol. 821-823   page: 9-13   2015

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    DOI: doi:10.4028/www.scientific.net/MSF.821-823.9

  72. Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent Reviewed

    Naoyoshi Komatsu, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, and Hajime Okumura

    Materials Science Forum   Vol. 821-823   page: 14-17   2015

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    DOI: doi:10.4028/www.scientific.net/MSF.821-823.14

  73. "Effect of forced convection by crucible design in solution growth of SiC single crystal" Reviewed

    K. Kurashige, M. Aoshima, K. Takei, K. Fujii, M. Hiratani, N. Senguttuvan, T. Kato, T. Ujihara, Y. Matsumoto, H. Okumura

      Vol. 821-823   page: pp. 22-25   2015

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    DOI: doi:10.4028/www.scientific.net/MSF.821-823.22

  74. バルク結晶成長のこの10年

    宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志

    JOURNAL OF THE JAPANESE ASSOCIATION FOR CRYSTAL GROWTH(日本結晶成長学会誌)   Vol. 42 ( 1 ) page: pp.64-68   2015

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    Language:Japanese  

  75. Non-uniform electrodeposition of zinc on the (0001) plane Reviewed

    T. Mitsuhashi, Y. Ito, Y. Takeuchi, S. Harada, T. Ujihara

    Thin Solid Films   Vol. 590   page: pp. 207-213   2015

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    DOI: doi:10.1016/j.tsf.2015.07.068

  76. Dislocation Conversion during SiC Solution Growth for High-quality Crystals Reviewed

    S. Harada, Y. Yamamoto, S. Xiao, D. Koike, T. Mutoh, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara

      Vol. 821-823   page: pp. 3-8   2015

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    DOI: doi:10.4028/www.scientific.net/MSF.821-823.3

  77. Control of interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal Reviewed

    D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Ujihara

      Vol. 821-823   page: pp. 18-21   2015

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    DOI: doi:10.4028/www.scientific.net/MSF.821-823.18

  78. Effect of aluminum addition on the surface step morphology of 4H SiC grown from Si-Cr-C solution

    T. Mitani, N. Komatsu, T. Takahashi, T. Kato, S. Harada, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura

    J. Cryst. Growth   Vol. 423   page: 45-49   2015

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    DOI: doi:10.1016/j.jcrysgro.2015.04.032

  79. "Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers" Reviewed

    Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa

    Journal of Crystal Growth   Vol. 401   page: 494-498   2014.9

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  80. "Growth rate and surface morphology of 4H SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions" Reviewed

    Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Kuniharu Fujii, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura

    Journal of Crystal Growth   Vol. 401   page: 681-685   2014.9

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  81. "Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique" Reviewed

    Kazuhiko Kusunoki, Nobuhiro Okada, Kazuhito Kamei, Koji Moriguchi, Hironori Daikoku, Motohisa Kado, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara

    Journal of Crystal Growth   Vol. 395   page: 68-73   2014.6

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  82. "Emregence and Amplification of Chirality via Achiral-Chiral Polymorphic Transformation in Sodium Chlorate Solution Growth" Reviewed

    Hiromasa Niinomi, Hitoshi Miura, Yuki Kimura, Makio Uwaha, Hiroyasu Katsuno, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto

    Crystal Growth and Design   Vol. 14 ( 7 ) page: 3596-3602   2014.6

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    DOI: 10.1021/cg500527t

  83. "Solubility measurement of a metastable achiral crystal of sodium chlorate in solution growth" Reviewed

    Hiromasa Niinomi, Atsushi Horio, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Katsuo Tsukamoto

    Journal of Crystal Growth   Vol. 394   page: 106-111   2014.5

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  84. "Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method" Reviewed

    Yuji Yamamoto, Shunta Harada, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Daiki Koike, Miho Tagawa, and Toru Ujihara

    Applied Physics Express   Vol. 7   page: 065501   2014.5

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    DOI: 10.7567/APEX.7.065501

  85. "Nitrogen doping of 4H- SiC by the top-seeded solution growth technique using Si-Ti solvent" Reviewed

    Kazuhiko Kusunoki, Kazuhito Kamei, Kazuaki Seki, Shunta Harada, Toru Ujihara

    Journal of Crystal Growth   Vol. 392   page: 60-65   2014.4

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  86. "The strain effect on the superconducting properties of BaFe2(As, P)2 thin films grown by molecular beam epitaxy" Reviewed

    T. Kawaguchi, A. Sakagami, Y. Mori, M. Tabuchi, T. Ujihara, Y. Takeda, and H. Ikuta

    Superconductor Science and Technology   Vol. 27   page: 065005 (6pp)   2014.4

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    DOI: 10.1088/0953-2048/27/6/065005

  87. "Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent" Reviewed

    Shunta Harada, Yuji Yamamoto, Shi Yu Xiao, Miho Tagawa, Toru Ujihara

    Materials Science Forum   Vol. 778-780   page: 67-70   2014.2

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  88. "Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents" Reviewed

    Kazuhiko Kusunoki, Kazuhito Kamei, Nobuhiro Okada, Koji Moriguchi, Hiroshi Kaido, Hironori Daikoku, Motohisa Kado, Katsunori Danno, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara

    Materials Science Forum   Vol. 778-780   page: Pages 79-82   2014.2

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  89. "Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC" Reviewed

    Tomonori Umezaki, Daiki Koike, Atsushi Horio, Shunta Harada, Toru Ujihara

    Materials Science Forum   Vol. 778-780   page: 63-66   2014.2

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  90. "Growth of a smooth CaF2 layer on NdFeAsO thin film" Reviewed

    N. Sumiya, T. Kawaguchi, M. Chihara, M. Tabuchi, T. Ujihara, A. Ichinose, I. Tsukada and H. Ikuta

    Journal of Physics: Conference Series   Vol. 507 ( 1 ) page: 012047   2014

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  91. "Coherence of a spin-polarized electron beam emitted from a semiconductor photocathode in a transmission electron microscope" Reviewed

    Makoto Kuwahara, Soichiro Kusunoki, Yoshito Nambo, Koh Saitoh, Xiuguang Jin, Toru Ujihara, Hidefumi Asano, Yoshikazu Takeda and Nobuo Tanaka

    Appl. Phys. Lett.   Vol. 105 ( 193101 )   2014

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    DOI: http://dx.doi.org/10.1063/1.4901745

  92. Direct measurement of conduction miniband structure in superlattice by visible-light photoemission spectroscopy

    F. Ichihashi, D. Shimura, K. Nishitani, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, H. Katsuno, M. Tagawa, T.Ujihara

    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th     page: 2882-2885   2014

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    DOI: DOI:10.1109/PVSC.2014.6925534

  93. "Critical current density and grain boundary property of BaFe2(As,P)2 thin films" Reviewed

    A. Sakagami, T. Kawaguchi, M. Tabuchi, T. Ujihara, Y. Takeda, H. Ikuta

    Physica C: Superconductivity,Proceedings of the 25th International Symposium on Superconductivity (ISS 2012) Advances in Superconductivity XXV   Vol. 494   page: 181–184   2013.11

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    DOI: doi:10.1016/j.physc.2013.04.047

  94. Phase-locking of oscillating images using laser-induced spin-polarized pulse TEM Reviewed

    Microscopy Advance Access     page: pp.1-8   2013.6

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  95. "Influence of Solution Flow on Step Bunching in Solution Growth of SiC Crystals" Reviewed

    Can Zhu, Shunta Harada, Kazuaki Seki, Huayu Zhang, Hiromasa Niinomi, Miho Tagawa, and Toru Ujihara

    Cryst. Growth Des.   Vol. 13 ( (8) ) page: 3691-3696   2013.6

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  96. "Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth" Reviewed

    Yuji Yamamoto, Shunta Harada, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Toru Ujihara

    Materials Science Forum   Vol. 740-742   page: pp.15-18   2013.1

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  97. "Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC" Reviewed

    Shunta Harada, Yuji Yamamoto, Kazuaki Seki, Toru Ujihara

    Materials Science Forum   Vol. 740-742   page: 189-192   2013.1

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  98. "Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method" Reviewed

    Kazuaki Seki, Shunta Harada, Toru Ujihara

    Materials Science Forum   Vol. 740-742   page: pp.311-314   2013.1

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  99. Direct Growth of AlN Single Crystal on Sapphire by Solution Growth Method Reviewed

    H. Matsubara, K. Mizuno, Y. Takeuchi, S. Harada, Y. Kitou, E. Okuno, and T. Ujihara,

      Vol. 52   page: 08JE17 (4 pages).   2013

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  100. "Evolution of threading screw dislocation conversion during solution growth of 4H-SiC" Reviewed

    S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, M. Tagawa, and T. Ujihara

    APL Mater.   Vol. 1 ( 2 ) page: 022109 (7 pages)   2013

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  101. 超高品質SiC溶液成長 Reviewed

    宇治原徹, 原田俊太, 山本祐治, 関和明

    応用物理   Vol. 82 ( 4 ) page: 326-329   2013

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  102. "Achiral Metastable Crystals of Sodium Chlorate Forming Prior to Chiral Crystals in Solution Growth" Reviewed

    Hiromasa Niinomi, Tomoya Yamazaki, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Takahiro Kuribayashi, Makio Uwaha, and Katsuo Tsukamoto

    Cryst. Growth Des.   Vol. 13 ( 12 ) page: pp.5188-5192   2013

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  103. SiC 結晶成長における多形制御 ~速度論的多形制御法の提案(3C-SiC 溶液成長を例に)~ Reviewed

    関 和明、原田 俊太、宇治原 徹

    日本結晶成長学会誌   Vol. 40 ( 4 ) page: 253-260   2013

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  104. SiC溶液成長の最近の展開 Reviewed

    原田 俊太、山本 祐治、関 和明、宇治原 徹

    日本結晶成長学会誌   Vol. 40   page: 25-32   2013

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  105. “Polytype-selective growth of SiC by supersaturation control in solution growth Original Research Article” Reviewed

    K. Seki, Alexander, S. Kozawa, S. Harada, T. Ujihara, Y. Takeda

    Journal of Crystal Growth   Vol. 360   page: 176-180.   2012.12

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  106. Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation

    Xiuguang Jin, Hirotaka Nakahara, Koh Saitoh, Takashi Saka, Toru Ujihara, Nobuo Tanaka, Yoshikazu Takeda

    Journal of Crystal Growth   Vol. 353 ( 1 ) page: 84-87   2012.8

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  107. Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth

    Yuji Yamamoto, Kazuaki Seki, Shigeta Kozawa, Alexander, Shunta Harada, Toru Ujihara

    Materials Science Forum   Vol. 717–720   page: 53-56   2012.5

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  108. Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth

    Toru Ujihara, Shigeta Kozawa, Kazuaki Seki, Alexander, Yuji Yamamoto, Shunta Harada

      Vol. 717–720   page: 351-354   2012.5

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  109. Substrate dependence of the superconducting properties of NdFeAs(O,F) thin films

    Hiroki Uemura, Takahiko Kawaguchi, Toshiya Ohno, Masao Tabuchi, Toru Ujihara, Yoshikazu Takeda, Hiroshi Ikuta

    Solid State Communications   Vol. 152 ( 8 ) page: 735-739   2012.4

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  110. Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth

    Shunta Harada, Alexander, Kazuaki Seki, Yuji Yamamoto, Can Zhu, Yuta Yamamoto, Shigeo Arai, Jun Yamasaki, Nobuo Tanaka, and Toru Ujihara

    Crystal Growth & Design   Vol. 12 ( (6) ) page: 3209-3214   2012

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  111. 30-kV spin-polarized transmission electron microscope with GaAs-GaAsP strained superlattice photocathode

    M. Kuwahara, S. Kusunoki, X. G. Jin, T. Nakanishi, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, and N. Tanaka

    Appl. Phys. Lett.   Vol. 101   page: 033102   2012

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  112. “Development of Spin-Polarized and Pulsed TEM “ Reviewed

    M. Kuwahara, F. Ichihashi, S. Kusunoki, K. Saitoh, T. Ujihara, H. Asano, T. Nakanishi, N. Tanaka

    J. Phys: Conf.   Vol. 371   page: 012004   2012

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  113. “High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth” Reviewed

    Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara

    Appl. Phys. Express   Vol. 5   page: 115501 (3 pages).   2012

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  114. Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system Reviewed

    Kazuaki Seki, Alexander, Shigeta Kozawa, Toru Ujihara, Patrick Chaudouët, Didier Chaussende, Yoshikazu Takeda

    Journal of Crystal Growth   Vol. 335 ( 1 ) page: 94-99   2011.11

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  115. High-quality and large-area 3C-SiC growth on 6H-SiC(0 0 0 1) seed crystal with top-seeded solution method. Reviewed

    Toru Ujihara, Kazuaki Seki, Ryo Tanaka, Shigeta Kozawa, Alexander, Kai Morimoto, Katsuhiro Sasaki, Yoshikazu Takeda

    Journal of Crystal Growth   Vol. 318   page: pp 389-393.   2011

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  116. Anomalous Diffusion in Supported Lipid Bilayers Induced by Oxide Surface Nanostructures Reviewed

    Ryugo Tero, Gen Sazaki, Toru Ujihara, and Tsuneo Urisu

      Vol. 27   page: 9662-9665   2011

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  117. Development of spin-polarized transmission electron microscope Reviewed

    M. Kuwahara, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, T. Nakanishi and N Tanaka

      Vol. 298   page: 012016   2011

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  118. Polytype stability of 4H-SiC seed crystal on solution growth Reviewed

    Alexander, K. Seki, S. Kozawa, Y. Yamamoto, T. Ujihara and Y. Takeda

    Materials Science Forum   Vol. 679-680   page: pp 24-27   2011

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  119. Defect evaluation of SiC crystal grown by solution method: the study by synchrotron X-ray topography and etching method Reviewed

    S. Kozawa, K. Seki, Alexander, Y. Yamamoto, T. Ujihara and Y. Takeda

    Materials Science Forum   Vol. 679-680   page: pp 28-31   2011

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  120. Increase of spectral width of stacked InAs quantum dots on GaAs by controlling spacer layer thickness. Reviewed

    Kazuma Tani, Shingo Fuchi, Ryota Mizutani, Toru Ujihara, Yoshikazu Takeda

    Journal of Crystal Growth   Vol. 318   page: pp 1113-1116   2011

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  121. Molecular Beam Epitaxy Growth of Superconducting NdFeAs(O,F) Thin Films Using a F-Getter and a Novel F-Doping Method Reviewed

    Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno, Masao Tabuchi, Toru Ujihara, Yoshikazu Takeda and Hiroshi Ikuta

    Appl. Phys. Express   Vol. 4   page: 083102 (3 pages)   2011

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  122. Epitaxial growth of LaFeAs(O,F) thin films by molecular beam epitaxy Reviewed

    T. Kawaguchi , H. Uemura , T. Ohno , M. Tabuchi , T. Ujihara , K. Takenaka , Y. Takeda , H. Ikuta

    Physica C: Superconductivity   Vol. Volume 471 ( Issues 21-22 ) page: pp. 1174-1176   2011

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  123. Status of the high brightness polarized electron source using transmission photocathode

    N. Yamamoto, X.G.Jin, A. Mano, T. Ujihara, Y. Takeda, S. Okumi, T. Nakanishi, T. Yasue, T. Koshikawa, T.Oshima, T. Saka and H. Horinaka,

      Vol. 298   page: 012017   2011

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  124. Strain of GaAs/GaAsP superlattices used as spin-polarized electron photocathodes, determined by X-ray diffraction Reviewed

    T. Saka, Y. Ishida, M. Kanda, X.G. Jin, Y. Maeda, S. Fuchi, T. Ujihara, Y. Takeda, T. Matsuyama, H. Horinaka, T. Kato, N. Yamamoto, A. Mano, Y. Nakagawa, M. Kuwahara, S. Okumi, T. Nakanishi, M. Yamamoto, T. Ohshima, T. Kohashi, M. Suzuki, M. Hashimoto, T. Yasue, T. Koshikawa

    -Journal of Surface Science and Nanotechnology   Vol. 8   page: 125-130   2010

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  125. Stacking Faults around the hetero-interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth Reviewed

    K. Seki, K. Morimoto, T. Ujihara, T. Tokunaga, K. Sasaki, K. Kuroda, and Y. Takeda

    Mater. Sci. Forum   Vol. 645-648   page: 363-366   2010

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  126. Real time magnetic imaging by spin-polarized low energy electron microscopy with highly spin-polarized and high brightness electron gun Reviewed

    M. Suzuki, M. Hashimoto, T. Yasue, T. Koshikawa, Y. Nakagawa, T. Konomi, A. Mano, N. Yamamoto, M. Kuwahara, M. Yamamoto, S. Okumi, T. Nakanishi, X.G. Jin, T. Ujihara, Y. Takeda, T. Kohashi, T. Ohshima, T. Saka, T. Kato, and H. Horinaka

    Appl. Phys. Express   Vol. 3   page: 026601   2010

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  127. Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices. Reviewed

    X.G. Jin, Y. Maeda, T. Sasaki, S. Arai, Y. Ishida, M. Kanda, S. Fuchi, T. Ujihara, T. Saka, and Y. Takeda

    J. Appl. Phys.   Vol. 108 ( 9 ) page: 094509 - 094509-6   2010

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  128. TEM analysis of SiC crystal grown on (001) 3C-SiC CVD substrate by solution growth Reviewed

    K. Morimoto, R.Tanaka, K. Seki, T. Tokunaga, T. Ujihara, K. Sasaki, Y. Takeda, K. Kuroda

    International Journal of Advanced Microscopy and Theoretical Calculations   Vol. Letters 2   page: pp 242-243   2010

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  129. In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy Reviewed

    T. Kawaguchi, H. Uemura, T. Ohno, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, and H. Ikuta

    Appl. Phys. Lett.   Vol. 97 ( 4 ) page: 042509   2010

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  130. High Temperature Solution Growth on Free-standing (001)3C-SiC Epilayers Reviewed

    R. Tanaka, K. Seki, T. Ujihara, Y. Takeda

    Mater. Sci Forum   Vol. 615-617   page: 37-40   2009

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  131. High Brightness and High Polarization Electron Source Using Transmission Photocathode Reviewed

    N. Yamamoto, X. Jin, A. Mano, Y. Nakagawa, T. Nakanishi, T. Ujihara, S. Okumi, M. Yamamoto, T. Konomi, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa

    AIP Proceedings   Vol. 1149   page: 1052-1056   2009

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  132. Status of 200keV Beam Operations at Nagoya University Reviewed

    M. Yamamoto, T. Konomi, S. Okumi, Y. Nakagawa, N. Yamamoto, M.Tanioku, X. Jin, T. Ujihara, Y. Takeda, F. Fukuta, H. Matsumoto

    AIP Proceedings   Vol. 1149   page: 987-991   2009

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  133. Shape transformation of adsorbed vesicles on oxide surfaces: Effect of substrate material and photo-irradiation Reviewed

    R. Tero, T. Ujihara and T. Urisu

    Trans. Mater. Res. Soc. Jpn.   Vol. 34 ( 2 ) page: 183-188   2009

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  134. Effects of Applied Voltage on the Size of Phase-Separated Domains in DMPS-DOPC Lipid Binary Bilayers Supported on SiO2/Si Substrates Reviewed

    Y. Yamauchi, T. Ujihara, R. Tero and Y. Takeda

    Trans. Mater. Res. Soc. Jpn.   Vol. 34 ( 2 ) page: 217-220   2009

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  135. Local Condensation of Artificial Raft Domains under Light Irradiation in Supported Lipid Bilayer of PSM-DOPC-Cholesterol System Reviewed

    T. Ujihara, S. Suzuki, Y. Yamauchi, R. Tero and Y. Takeda

    Trans. Mater. Res. Soc. Jpn.   Vol. 34 ( 2 ) page: 179-182   2009

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  136. 次世代のSiC高品質基板結晶作製技術 溶液法によりマイクロパイプ・基底面転位を低減 産学の連携を深め、実用化をめざす

    宇治原徹, 竹田美和

    Semiconductor FPD World   Vol. 11   page: 55-58   2009

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  137. SiC単結晶の溶液成長

    宇治原徹

    Materials Stage   Vol. 9   page: 46-49   2009

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  138. Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy Reviewed

    Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno, Ryotaro Watanabe, Masao Tabuchi, Toru Ujihara, Koshi Takenaka, Yoshikazu Takeda, and Hiroshi Ikuta

    Applied Physics Express   Vol. 2   page: 093002   2009

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  139. Anisotropy of mosaic structure of GaAsP layers grown on GaAs substrates Reviewed

    T. Saka, T. Kato, X.G. Jin, M. Tanioku, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Matsuyama, T. Yasue, and T. Koshikawa

    Phys. Status Solidi   Vol. 8   page: 1785   2009

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  140. *Stability Growth Condition for 3C-SiC Crystals by Solution Technique Reviewed

    T. Ujiahra, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda, Y. Takeda,

    Mater. Sci Forum   Vol. 600-603   page: 63-66   2009

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  141. Low temperature solution growth of 3C-SiC crystals in Si-Ge-Ti solvent Reviewed

    R. Tanaka, T. Ujihara, Y. Takeda,

    Mater. Sci Forum   Vol. 600-603   page: 59-62   2009

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  142. Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method Reviewed

    K. Seki, R. Tanaka, T. Ujihara, Y. Takeda,

    Mater. Sci Forum   Vol. 615-617   page: 27-30   2009

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  143. Study of minority carrier diffusion length in multicrystalline silicon solar cells using photoassisted Kelvin probe force microscopy Reviewed

    Masaki Takihara, Takuji Takahashi, Toru Ujihara

    Appl. Phys. Lett.   Vol. 95   page: 19   2009

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  144. High brightness and high polarization electron source using transmission photocathode with GaAs-GaAsP superlattice layers Reviewed

    "N. Yamamoto, Y. Nakanishi, A. Mano, Y. Nakagawa, S. Okumi, M. Yamamoto, T. Konomi, X. G. Jin, T. Ujihara, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa, M. Kuwahara,"

    J. Appl. Phys.   Vol. 103   page: 64905   2008

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  145. 固体表面物性がサポーティッドメンブレンの形成過程と構造に及ぼす影響 Reviewed

    手老龍吾, 宇治原徹, 宇理須恒雄,

    表面 HYOMEN(SURFACE)   Vol. 46   page: 287-299   2008

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  146. Minority Carrier Lifetime in Polycrystalline Silicon Solar Cells Studied by Phot-assisted Kelvin Probe Force Microscopy Reviewed

    M. Takihara, T. Ujihara, T. Takahashi

    Appl. Phys. Lett.   Vol. 93   page: 021902   2008

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  147. Local concentration of gel phase domains in supported lipid bilayers under light irradiation in binary mixture of phospholipids doped with dyes for photoinduced activation Reviewed

    T. Ujihara, S. Suzuki, Y. Yamauchi, R. Tero, Y. Takeda,

    Langmuir   Vol. 24   page: 10974-10980   2008

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  148. Lipid Bilayer Membrane with Atomic Step Structure:Supported Bilayer on Step-and-Terrace TiO2(100) Surface Reviewed

    R. Tero, T. Ujihara, T. Urisu,

    Langmuir   Vol. 24   page: 11567-11576   2008

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  149. Highly spin-polarized electron photocathode based on GaAs-GaAsP superlattice grown on mosaic-structured buffer layer Reviewed

    X.G. Jin, Y. Maeda, T. Saka, M. Tanioku, S. Fuchi, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Kato, T. Yasue, and T. Koshikawa

    J. Crystal Gorwth   Vol. 310   page: 5039-5043   2008

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  150. " 歪み超格子スピン偏極電子源構造におけるバッファ層歪み緩和過程と偏極度の関係,"

    "前多悠也, 金秀光, 谷奥雅俊, 渕真悟, 宇治原徹, 竹田美和, 山本尚人,中川靖英, 山本将博, 奥見正治, 中西彊, 坂貴, 堀中博道, 加藤俊宏, 安江常夫, 越川孝範"

    信学技報   Vol. 108   page: 75-84   2008

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  151. Effects of absorbed group-V atoms on the size distribution and optical properties of InAsP quantum dots fabricated by the droplet hetero-epitaxy Reviewed

    "S. Fuchi, S. Miyake, S. Kawamura, W.S. Lee, T. Ujihara, Y. Takeda,"

    J. Crystal Gorwth   Vol. 310   page: 2239-2243   2008

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  152. *Solution growth of high-quality 3C-SiC crystals Reviewed

    "T. Ujihara, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda, and Y. Takeda,"

    J. Crystal Gorwth   Vol. 310   page: 1438-1442   2008

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  153. *Super-high brightness spin-polarized transmission photocathode based on GaAs-GaAsP strained superlattice structure on GaP substrate Reviewed

    "X.G. Jin, N. Yamamoto,Y. Nakagawa, A. Mano, T. Kato, M. Tanioku, T. Ujihara, Y. Takeda, S. Okumi, M. Yamamoto, T. Nakanishi11, T. Saka, H. Horinaka, T. Yasue, and T. Koshikawa,"

    Appl. Phys. Express   Vol. 1   page: 45002   2008

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  154. Supported lipid bilayer membranes on SiO2 and TiO2: substrate effects on membrane formation and shape transformation Reviewed

    "R. Tero, T. Ujihara, T. Urisu"

    Proceedings of SPIE   Vol. 6769   page: 1-12   2007

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  155. " Er,O共添加GaAsを有する分離閉じ込め構造による1.5μm帯の電流注入による発光強度の増大,"

    "宇木大輔, 山口岳宏, 田中雄太, 渕真悟, 宇治原徹, 竹田美和"

    信学技報   Vol. 107   page: 29-34   2007

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  156. "歪み補償型GaAs/GaAsP超格子偏極電子源の特性向上,"

    "加藤鷹紀, 酒井良介, 谷奥雅俊, 中川靖英, 前田義紀, 金秀光, 渕真悟, 山本将博, 宇治原徹, 中西 彊, 竹田美和"

    信学技報   Vol. 107   page: 109-114   2007

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  157. 生体膜における相分離構造に関する研究

    宇治原徹

    まてりあ   Vol. 46   page: 433   2007

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  158. Photovoltage mapping on polycrystalline silicon solar cells by Kelvin probe force microscopy with piezoresistive cantilever Reviewed

    "M. Takihara, T. Igarashi, T. Ujihara and T. Takahashi,"

    Jpn. J. Appl. Phys. Part 1   Vol. 46   page: 5548-5551   2007

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  159. Thermal emittance measurements for electron beams produced from bulk and superlattice negative electron affinity photocathods Reviewed

    "N. Yamamoto, M. Yamamoto, M. Kuwahara, R. Sakai, T. Morino, K. Tamagaki, A. Mano, A. Utsu, S. Okumi, T. Nakanishi, M. Kuriki, C. Bo, T. Ujihara and Y. Takeda"

    J. Appl. Phys.   Vol. 102   page: 24904   2007

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  160. "Effect of Li doping on photoluminescence from Er, O-codoped GaAs" Reviewed

    "D. Uki, H. Ohnishi, T. Yamaguchi, Y. Takemori, A. Koizumi, S. Fuchi, T. Ujihara and Y. Takeda,"

    J. Crystal Growth   Vol. 298   page: 69-72   2007

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  161. Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique Reviewed

    "K. Kusunoki, K. Kamei, N. Okada, N. Yashiro, A. Yauchi, T. Ujihara, and K. Nakajima"

    Mater. Sci Forum   Vol. 527-529   page: 119-122   2006

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  162. 分散量子ドット構造を利用した広帯域発光素子 Reviewed

    李祐植, 三宅信輔, 渕真悟, 宇治原徹, 竹田美和

    日本結晶成長学会誌   Vol. 33   page: 106-110   2006

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  163. Photovoltage Mapping on Polycrystalline Silicon Solar Cells through Potential Measurements by AFM with Piezo-resistive Cantilever Reviewed

    "T. Igarashi, T. Ujihara, T. Takahashi,"

    Jpn. J. Appl. Phys. Part 1   Vol. 45   page: 2128-2131   2006

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  164. Size uniformity of InAs dots on mesa-structure templates on (001) InP substrates grown by droplet metal-organic vapor phase epitaxy method Reviewed

    "T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda"

    Appl. Phys. Lett.   Vol. 89   page: 083110   2006

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  165. "Growth of SiC single crystal from Si-C-(Co, Fe) ternary solution" Reviewed

    "Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara and Kazuo Nakajima"

    Mater. Sci Forum   Vol. 527-529   page: 115-118   2006

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  166. Evaluation of Strain Field around SiC Particle in Poly-Crystalline Silicon

    "T. Ujihara, T. Ichitsubo, N. Usami, K. Nakajima, Y. Takeda,"

    Proc. IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC4)     page: 272   2006

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  167. GaAs/GaAsP歪み超格子偏極電子源の結晶性改善による高性能化

    "宇治原徹, 陳 博, 安井健一, 酒井良介、山本将博、中西 彊、竹田美和,"

    信学技報   Vol. 106   page: 79-84   2006

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  168. The wideband light emission around 800 nm from ternary InAsP quantum dots with an intentionally broadened size and composition distribution Reviewed

    S. Miyake, W. S. Lee, T. Ujihara and Y. Takeda

        page: p. 208-210   2006

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  169. Pattern size effect on source supply process for sub-micrometer scale selective-area-growth by organometallic vapor phase epitaxy Reviewed

    T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda

    J. Crystal Growth   Vol. 289   page: 89-95   2006

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  170. Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent Reviewed

    "Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima, and T. Ujihara"

    J. Appl. Phys.   Vol. 98   page: 073708   2005

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  171. メサ構造InPテンプレート基板へのInAs量子ドットの成長とサイズ制御

    "宇治原 徹, 吉田義浩, 李祐植, 竹田美和"

    信学技報   Vol. 105   page: 23-26   2005

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  172. Structural properties of directionally grown polycrystalline SiGe for solar cells Reviewed

    "K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima"

    J.Cryst.Growth.   Vol. 275   page: 467-473   2005

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  173. Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams Reviewed

    "K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki"

    International Journal of Material & Product Technology.   Vol. 22   page: 185-212   2005

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  174. "Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate" Reviewed

    "G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima"

    J.Cryst.Growth.   Vol. 273   page: 594-602   2005

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  175. A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal Reviewed

    "Y. Azuma, N, Usami, K, Fujiwara, T, Ujihara and K, Nakajima"

    J.Cryst.Growth   Vol. 276   page: 393-400   2005

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  176. Crystal quality of a 6H-SiC layer grown over macro-defects by liquid phase epitaxy: a Raman spectroscopic study Reviewed

    "T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima"

    Thin Solid Films   Vol. 476   page: 206-209   2005

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  177. 太陽電池用Si系バルク多結晶の結晶成長及び太陽電池特性 ―多結晶Siの融液成長のその場観察とバルク多結晶SiGeの特性評価― Reviewed

    "藤原航三, 宇佐美徳隆, 藩伍根, 宇治原徹, 野村明子, 野瀬嘉太郎, 宍戸統悦, 中嶋一雄, "

    日本結晶成長学会誌   Vol. 32   page: 291-296   2005

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  178. Electrical Properties around Grain Boundary of Poly-Crystalline Silicon for Solar Cell Evaluated Using the Conductive AFM

    "T. Ujihara, K. Nakajima, Y. Takeda, "

    Proc. 15th PVSEC     page: 118-119   2005

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  179. Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution Reviewed

    "K. Kusunoki, K. Kamei, Y. Ueda, S. Naga, Y. Ito, M. Hasebe, T. Ujihar, K. Nakajima"

    Mater. Sci Forum   Vol. 483   page: 13-16   2005

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  180. Analytical evaluation of growth process in a sub-micron scale selective-area growth by OMVPE Reviewed

    Toru Ujihara, Yoshihiro Yoshida, Woo Sik Lee, Ryo Oga, Yoshikazu Takeda

        page: p112   2005

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  181. Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer

    U. Noritaka, K. Kutsukake, W. Pan, K. Fujiwara, T. Ujihara, B. Zhang, T. Yokoyama, K. Nakajima

    J. Cryst. Growth   Vol. 275   page: 1203-1207   2005

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  182. Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe Reviewed

    "N. Usami, WG. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K.Nakajima"

    Jpn. J. Appl. Phys.   Vol. 43   page: L250-L252   2004

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  183. Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution Reviewed

    "W. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima, R. Shimokawa"

    J. Appl. Phys.   Vol. 96 (2)   page: 1238-1241   2004

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  184. Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation Reviewed

    "Y.Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara, T. Ujihara"

    Jpn. J. Appl. Phys.   Vol. Feb-46   page: L907   2004

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  185. Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate Reviewed

    "K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa"

    Appl. Surf. Sci.   Vol. 224   page: 604-607   2004

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  186. Effects of growth temperature on the surface morphology of silicon thin-film on (111) silicon monocrystalline substrate grown by liquid phase epitaxy Reviewed

    "T. Ujihara, E. Kanda, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima"

    J. Crystal Growth   Vol. 266   page: 467-474   2004

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  187. Grain growth behaviors of polycrystalline silicon during melt growth processes Reviewed

    "K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima"

    J. Crystal Growth   Vol. 266   page: 441-448   2004

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  188. Molten metal flux growth and properties of CrSi2 Reviewed

    "T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima"

    JOURNAL OF ALLOYS AND COMPOUNDS.   Vol. 383   page: 319-321   2004

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  189. Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer Reviewed

    "A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y Shiraki"

    Appl. Phys. Lett.   Vol. 84   page: 2802-2804   2004

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  190. In-situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy Reviewed

    "G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara, K. Nakajima"

    J. Crystal Growth   Vol. 262   page: 536-542   2004

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  191. Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate Reviewed

    "G. Sazaki, T. Fujino, J.T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, H. Takahashi, E. Matsubara, T. Sakurai, K. Nakajima"

    J. Crystal Growth   Vol. 262   page: 196-201   2004

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  192. Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime Reviewed

    "N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima"

    Thin Solid Films   Vol. 451-452   page: 604-607   2004

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  193. In-situ observations of melt growth behavior of polycrystalline silicon Reviewed

    "K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima"

    J. Crystal Growth   Vol. 262   page: 124   2004

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  194. Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations Reviewed

    "K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki, and T. Shishido"

    J. Crystal Growth   Vol. 260   page: 372-383   2004

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  195. On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates Reviewed

    "K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, and K. Nakajima"

    Appl. Phys. Lett.   Vol. 85   page: 1335-1337   2004

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  196. 材料工学からの太陽電池研究

    宇治原徹

    まてりあ   Vol. 43   page: 949-953   2004

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  197. SiGeバルク単結晶と多結晶の成長技術およびそれらのデバイス応用 : 均一組成のバルク単結晶とミクロ分散的組成分布を有する太陽電池用バルク多結晶

    "中嶋一雄, 藤原航三, 宇佐美徳隆, 藩伍根, 佐崎元, 宇治原徹, 宍戸統悦, "

    日本結晶成長学会誌   Vol. 31   page: 29-37   2004

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  198. Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy Reviewed

    Toru Ujihara, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, and Kazuo Nakajima

    Mater. Sci Forum   Vol. 457-460   page: 633-637   2004

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  199. Excellent Effect of Gallium Solvent on Preparation of High Lifetime Silicon Crystal by LPE Method Reviewed

    Toru Ujihara, Yusuke Satoh, Kazuo Obara, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Toetsu Shishido and Kazuo Nakajima

        page: ?   2004

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  200. TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent Reviewed

    K. Kamei, K. Kusunoki, S. Munetoh, T. Ujihara and K. Nakajima

    Mater. Sci Forum   Vol. 457-460   page: 347-351   2004

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  201. Solution growth of self standing 6H-SiC single crystal using metal solvent Reviewed

    K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara and K. Nakajima

    Mater. Sci Forum   Vol. 457-460   page: 123-126   2004

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  202. Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals Reviewed

    "Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Ujihara, K. Fujiwara, N. Usami, and K. Nakajima"

    J. Crystal Growth   Vol. 254   page: 188-195   2003

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  203. Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix Reviewed

    N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki, and K. Nakajima

    Journal of Applied Physics   Vol. 94   page: 916-920   2003

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  204. Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure Reviewed

    A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima

    Applied Physics Letters   Vol. 83   page: 1258-1260   2003

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  205. Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate Reviewed

    K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa

    Jpn. J. Appl. Phys.   Vol. 42   page: L232-L234   2003

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  206. Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature Reviewed

    Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima

    J. Crystal Growth   Vol. 250   page: 298-304   2003

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  207. Hightemperature solution growth and characterization of chromium disilicide Reviewed

    "T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y.Yokoyama, S. Kohiki , Y. Kawazoe and K. Nakajima"

    Jpn. J. Appl. Phys.   Vol. 42   page: 7292-7293   2003

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  208. Stacked Ge islands for photovoltaic applications Reviewed

    "N. Usami, A. Alguno, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki"

    Sci. Tech. Adv. Mat   Vol. 4   page: 367-370   2003

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  209. High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature Reviewed

    T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima

    Jpn. J. Appl. Phys.   Vol. 42   page: L217-L219   2003

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  210. What is the most important growth parameter on crystal quality of the silicon layer by LPE method? Reviewed

    T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima

      ( 2 ) page: 1241 - 1244   2003

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  211. Improved quantum efficiency of solar cells with ge dots stacked in multilayer structure Reviewed

    A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, K. Sawano*, G. Sazaki, Y. Shiraki* and K. Nakajima

      ( 3 ) page: 2746 - 2749   2003

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  212. Spatial distribution of composition and strain in multicrystalline SiGe bulk crystal and their impact on solar cell application Reviewed

    N. Usami, T. Takahashi, A. Alguno, K. Fujiwara, T. Ujihara, G. Sazaki, and K. Nakajima

      ( 1 ) page: 98-101   2003

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  213. Direct observations of crystal growth from silicon melt Reviewed

    K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguti and K.Nakajima

      ( 1 ) page: 110 - 113   2003

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  214. Structure and property of directionally grown SiGe multicrystals with microscopic compositional distribution Reviewed

    K. Fujiwara, T. Takahashi, N. Usami, T. Ujihara, G. Sazaki and K. Nakajima

      ( 1 ) page: 158 - 160   2003

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  215. Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications Reviewed

    K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki, and T. Shishido

    Sol. Energy Mater. Sol. Cells   Vol. 72   page: 93-100   2002

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  216. Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution Reviewed

    N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima

    J. Appl. Phys.   Vol. 92   page: 7098-7101   2002

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  217. Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick's first law Reviewed

    T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima

    J. Non-Cryst. Solids   Vol. 312-314   page: 196-202   2002

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  218. In situ observation of crystal growth behavior from silicon melt Reviewed

    K. Fujiwara, Ke. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, K. Nakajima

    J. Crystal Growth   Vol. 243   page: 275-282   2002

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  219. Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals Reviewed

    K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, and T. Shishido

    J. Crystal Growth   Vol. 240   page: 370-381   2002

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  220. Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells Reviewed

    K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido

    Sol. Energy Mater. Sol. Cells   Vol. 73   page: 305-320   2002

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  221. Evidence for the presence of built-in strain in multicrystalline SiGe with large compositional distribution Reviewed

    N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima

    Jpn. J. Appl. Phys.   Vol. 41   page: 4462-4465   2002

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  222. Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures Reviewed

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, and K. Nakajima

    Mat. Sci. Eng. B   Vol. 89   page: 364-367   2002

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  223. In-situ monitoring system of the position and temperature at the crystal-solution interface Reviewed

    G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima

    J. Crystal Growth   Vol. 236   page: 364-367   2002

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  224. New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law Reviewed

    T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima

    J. Crystal Growth   Vol. 241   page: 387-394   2002

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  225. Crystal growth of silicon-germanium homogeneous bulk crystal and related measurement

    J. Japanese association for crystal growth   Vol. 29 ( 5 ) page: 339   2002

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  226. *Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions Reviewed

    T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima

    J. Crystal Growth   Vol. 242   page: 313-320   2002

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  227. Grain growth of polycrystalline Si thin film for solar cells and its effect on crystal properties Reviewed

    Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Yoshihiro Murakami, Kuninori Kitahara and Kazuo Nakajima

        page: 1339-1342   2002

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  228. Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution Reviewed

    N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, K. Nakajima, and H. Yaguchi

    Jpn. J. Appl. Phys.   Vol. 41   page: L37-L39   2002

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  229. In-situ observation of the Marangoni convection of a NaCl aqueous solutions under microgravity Reviewed

    G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, N. Usami, and K. Nakajima

    J. Crystal Growth   Vol. 234   page: 516-522   2002

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  230. Effect of growth temperature on surface morphology and crystal quality of Si thin-film by liquid phase epitaxial growth technique Reviewed

    Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Noritaka Usami, Gen Sazaki, Kazuo Nakajima

        page: 408-411   2002

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  231. Si/multicrystalline-SiGe heterostructure as a candidate for solar cells with high conversion efficiency Reviewed

    N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima

        page: 247-249   2002

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  232. Assessing composition gradient energy effects due to spin interaction on the spinodal decomposition of Fe-Cr Reviewed

    "T. Ujihara, K. Osamura"

    Mater. Sci. Eng. A   Vol. 312   page: 128   2001

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  233. Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method Reviewed

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K.Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa, and S. Kodama

    Semicon. Sci. and Technol.   Vol. 16   page: 699-703   2001

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  234. Effects of misfit dislocation and AlN buffer layer on the GaInN/GaN phase diagram of the growth modes Reviewed

    K. Nakajima, T. Ujihara, and G. Sazaki

    J. Appl. Phys.   Vol. 89   page: 146-153   2001

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  235. Growth of SixGe1-x (x=0.15) Bulk Crystal with Uniform Composition by Utilizing in situ Monitoring of the Crystal-Solution Interface Reviewed

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami, and K.Nakajima

    Jpn. J. Appl. Phys.   Vol. 44   page: 4141-4144   2001

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  236. Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt interface using in-situ monitoring system Reviewed

    Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara, and K. Nakajima

    J. Crystal Growth   Vol. 224   page: 204-211   2001

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  237. Physical model for the evaluation of solid-liquid interfacial tension in silicon Reviewed

    T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami, K. Nakajima

    J. Appl. Phys.   Vol. 90   page: 750-755   2001

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  238. Kinetic analysis of spinodal decomposition process in Fe-Cr alloys by small angle neutron scattering Reviewed

    "T. Ujihara, K. Osamura"

    Acta Materialia   Vol. 48   page: 1629-1637   2000

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  239. Effects of the dislocation density and surface energy on phase diagrams of the S-K mode for the GaInN/GaN and GaPSb/GaP systems Reviewed

    "K. Nakajima, T. Ujihara, S. Miyashita, and G. Sazaki"

    In Mat. Res. Soc. Symp. Proc.   Vol. 618   page: 285-290   2000

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  240. "Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies" Reviewed

    K. Nakajima, T. Ujihara, G. Sazaki, and N. Usami

    J. Crystal Growth   Vol. 220   page: 413-424   2000

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  241. SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications Reviewed

    N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, Y. Yakabe, T. Kondo, S. Koh, B. Zhang, Y. Segawa,Y. Shiraki, S. Kodama, and K. Nakajima

    Appl. Phys. Lett.   Vol. 77   page: 3565-3567   2000

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  242. In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry Reviewed

    T. Ujihara, G. Sazaki, S. Miyashita, N. Usami, K. Nakajima

    Jpn J. Appl. Phys   Vol. 39   page: 5981-5982   2000

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  243. Thickness dependence of stable structure of the Stranski-Krastanov mode in the GaPSb/GaP system Reviewed

    K. Nakajima, T. Ujihara, S. Miyashita, G. Sazaki

    Journal of Crystal Growth   Vol. 209   page: 637-647   2000

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  244. "The excess free energy due to composition gradient for ferromagnetic alloys""" Reviewed

    "T. Ujihara, K. Osamura"

    Acta Materialia   Vol. 47   page: 3041-3048   1999

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  245. Phase diagrams and stable structures for Sranski-Krastanov mode of III-V ternary quantum dots Reviewed

    "K. Nakajima, T. Ujihara, S. Miyashita and G. Sazaki, "

    Journal of Korean Association of Crystal Growth   Vol. 9   page: 387-395   1999

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  246. Magnetic damping of the temperature-driven convection in NaCl aqueous solution using a static and homogenous of 10 T Reviewed

    "G. Sazaki, S. D. Drubin, S. Miyashita, T. Ujihara, K. Nakajima, M. Motokawa"

    Jpn. J. Appl. Phys.   Vol. 38   page: L842-L844   1999

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  247. Kinetics of Spinodal Decomposition with Composition Dependent Mobility Reviewed

    "T. Ujihara, K. Osamura"

    Proceeding of the International Conference on Solid-Solid Phase Transformation   Vol. 99   page: 117-120   1999

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  248. Effect of nonlinearity of the evolution equation on the spinodal decomposition process in alloys Reviewed

    "T. Ujihara, K. Osamura"

    Physical Review   Vol. B58 ( 17 ) page: 11371   1998

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  249. Shape Anisotropy of GP Zone in Early Decomposition Process of Al-Zn Binary Alloy Reviewed

    J. Japan Inst. Metals   Vol. 62 ( 2 ) page: 117   1998

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  250. Effect of Third Elements on Cu Precipitation on Fe-Cu Alloys Reviewed

    "Toru Ujihara, Kozo Osamura"

    Ann. Physiq.   Vol. C3 ( 20 ) page: 3   1995

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  251. Phase Decomposition in Fe-Cr-Mo Alloy Reviewed

    "Kozo Osamura Toru Ujihara, Hiroshi Okuda, Michihiro Furusaka"

    Proc. Int. Conf. On PTM'94 Solid-Solid Transformation in Inorganic Materials     page: ",377"   1994

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Books 10

  1. ポストシリコン半導体―ナノ成膜ダイナミクスと基板・界面効果―『第3編 結晶成長・成膜法 第4章 溶液法によるSiC結晶成長法 ~SiCを事例として~』, 株式会社ニッケイ印刷 編

    財満鎮明,佐藤勝昭,押山淳,室田淳一,櫻庭政夫,奥村元,北畠真,石田夕起,矢野裕司,竹内哲也,尾鍋研太郎,鳥海明,酒井朗,中塚理,堀越佳治,杉山弘樹,秦雅彦,高木信一,大友明,東脇正高,佐々木公平,須崎友文,川原田洋,小泉聡,伊藤利道,鈴木一博,山崎聡,竹内大輔,大串秀世,牧野敏晴,小倉政彦,加藤宙光,末光眞希,中辻寛,小森文夫,近藤大雄,熊谷義直,纐纈明伯,森勇介,今出完,丸山美帆子,吉村政志,寒川義裕,宇治原徹,着本享,松畑洋文,幾原雄一,中山隆史,小日向恭祐,山下良之,笹原亮,富取正彦,吉武道子,吉野淳二,伊藤智徳,岡田晋,金山敏彦( Role: Sole author)

    株式会社エヌ・ティー・エス  2013.6 

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  2. 『5 パワー半導体材料』, 「太陽エネルギー社会を築く材料テクノロジー(Ⅰ) -材料デバイス編-」

    宇治原徹, 名古屋大学大学院工学研究科材料バックキャストテクノロジー研究センター 編( Role: Joint author)

    コロナ社  2013 

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  3. SiCパワーデバイスの開発と最新動向―普及に向けたデバイスプロセスと実装技術―

    岩室 憲幸,中野 佑紀,原田 信介,古川 彰彦,今泉 昌之,大森 達夫,矢野 裕司,吉川 正信,先崎 純寿,二本木 直,築野 孝 ,浅野 勝則,辻 崇 富,中山 浩二,匹田 政幸,渡邉 純二,加藤 正史,高尾 和人,徳田 人基,石川 佳寛,門田 健次,大谷 昇,宇治原 徹,藤本 辰雄,高橋 宏和,岩井 利光,星山 豊宏,加藤 智久,山口 桂司,佐藤 誠,佐野 泰久,有馬 健太,山内 和人,石田 夕起,土田 秀一,齋藤 真,伊瀬 敏史( Role: Joint author)

    S&T出版  2012.10  ( ISBN:978-4-907002-06-0

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  4. これで使える 機能性材料パーフェクトガイド

    大竹尚登, 神埼昌郎, 宇治原徹, 髙﨑正也( Role: Joint author)

    講談社サイエンティフィク  2012.3 

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  5. 半導体SiC技術と応用 第2版 3.3.2 六方晶基板上への3C-SiC溶液成長

    松浪弘之, 大谷昇, 木本恒暢, 中村孝 編著 宇治原徹( Role: Joint author)

    日刊工業新聞社  2011 

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  6. 「工学的手法による膜制御」, トランスポートソームの世界-膜輸送研究の源流から未来へ-

    宇治原徹( Role: Sole author)

    京都廣川書店  2011 

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  7. SiCパワーデバイスの最新技術, SiCバルク結晶の溶液成長技術

    宇治原徹( Role: Sole author)

    サイエンス&テクノロジー社  2010 

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  8. 薄膜ハンドブック 第2版, 2.2.1 エピタキシーの基礎

    竹田美和, 宇治原徹( Role: Joint author)

    オーム社  2008 

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  9. 4.1.5. 半導体量子構造の結晶成長と形成過程「自然に学ぶ材料プロセッシング」

    宇治原徹( Role: Sole author)

    三共出版  2007 

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  10. "Effects of a Magnetic Field on the Crystallization of Protein" in "Materials Science in Static High Magnetic Fields"

    G. Sazaki, S. Yanagiya, S.D. Durbin, S. Miyashita, T. Nakata, H. Komatsu, T. Ujihara, K.Nakajima, M. Motokawa( Role: Joint author)

    2002 

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Presentations 758

  1. 面欠陥周期配列を含むCr添加酸化チタン多結晶の熱伝導率の温度依存性

    杉本 峻也, 金 柯怜, 竹内 恒博, 田川 美穂, 宇治原 徹, 原田 俊太

    2021年第68回応用物理学会学術講演会  2021.3.16 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  2. ダイヤモンド半導体電界効果トランジスタの特性予測モデルの構築

    西部 愛里紗, 蜂谷 涼太, 藤井 茉美, 沓掛 健太朗, 宇治原 徹, 浦岡 行治

    2021年第68回応用物理学会学術講演会  2021.3.19 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  3. 放射光トポグラフィーによるSiC中の基底面転位の深さ評価

    藤榮 文博, Hongyu Peng, Tuerxun Ailihumaer, Balaji Raghothamachar, Michael Dudley, 原田 俊太, 田川 美穂, 宇治原 徹

    2021年第68回応用物理学会学術講演会  2021.3.18 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  4. 面欠陥周期配列を含む自然超格子酸化チタンの構造制御と熱輸送特性

    原田 俊太, 小坂 直輝, 杉本 峻也, 八木 貴志, 田川 美穂, 宇治原 徹

    2021年第68回応用物理学会学術講演会  2021.3.16 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  5. DNAガイドのナノ粒子結晶化:構造制御と結晶対称性を維持した収縮制御 Invited

    田川美穂, 鷲見隼人, 横森真麻, 前田勇士, 太田昇, 関口博史, 原田俊太, 宇治原徹

    日本物理学会第76回年次大会(領域9結晶成長)  2021.3.13 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  6. Protein crystallization in microdroplets with the aid of electrically induced microbubbles Invited International conference

    A. Hirao, N. Tottori, M. Yokomori, M.Tagawa, S. S. Sugano, S. Sakuma, Y. Yamanishi

    The 34th IEEE Int. Conf. on Micro Electro Mechanical Systems (IEEE MEMS 2021)  2021.1.25 

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    Event date: 2021.1

    Language:English   Presentation type:Oral presentation (invited, special)  

  7. 顕微ラマン分光法によるGaN結晶中の貫通転位のひずみイメージングStrain imaging of threading dislocations in GaN crystal by micro-Raman spectroscopy Invited

    小久保 信彦,角岡 洋介, 藤榮文博,恩田正一,山田永,清水三聡,原田俊太,田川美穂,宇治原徹

    先進パワー半導体分科会 第7回講演会  2020.12.10 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  8. Prediction system of CFD simulation in solution growth constructed by machine learning - Application for SiC top-seeded solution growth – Invited International conference

    Toru Ujihara, Yosuke Tsunooka, Tomoki Endo, Can Zhu, Shunta Harada, Miho Tagawa

    17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors (SSLCHINA&IFWS 2020)  2020.11.24 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:China  

  9. SiC溶液成長の最適化におけるプロセスインフォマティクスの活用

    宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  10. DNA修飾ナノ粒子コロイド結晶化における結晶性に及ぼす塩濃度の影響

    鷲見隼人, 太田昇, 関口博史, 原田俊太, 宇治原徹, 田川美穂

    第49回結晶成長国内会議(JCCG-49)  2020.11.11 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  11. DNA修飾ナノ粒子超格子のサイズ・結晶性に及ぼす修飾DNA鎖長の影響

    鈴木康平, 太田昂, 関口博史, 鷲見隼人, 横森真麻, 原田俊太, 宇治原徹, 田川美穂

    第49回結晶成長国内会議(JCCG-49)  2020.11.11 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  12. DNA修飾ナノ粒子超格子結晶化における塩濃度が粒子間相互作用に与える影響

    楊冰琦, 鷲見隼人, 太田昇, 関口博史, 原田俊太, 宇治原徹, 田川美穂

    第49回結晶成長国内会議(JCCG-49)  2020.11.11 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  13. CFDによるステップバンチング挙動シミュレーション

    劉欣博, 党一帆, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.11 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  14. Cr添加酸化チタン結晶における面欠陥周期構造の制御

    杉本峻也, 田川美穂, 宇治原徹, 原田俊太

    第49回結晶成長国内会議(JCCG-49)  2020.11.10 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  15. SiC結晶成長における機械学習を用いた炉内温度分布の予測

    吉村太一, 岡野泰則, 宇治原徹, Sadik Dost

    第49回結晶成長国内会議(JCCG-49)  2020.11.10 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  16. 説明可能機械学習を用いたTSSG-SiC結晶作製時の移動現象解析

    中野高志, 土肥龍錫, 沓掛健太郎, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.10 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  17. SiCウェハ研削におけるデータ解析と人間の知見を反映した制約つきベイズ最適化

    中野高志, 土肥龍錫, 沓掛健太郎, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.10 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  18. 長時間安定SiC溶液成長における経時変化のシミュレーションと最適化

    党一帆, 朱燦, 幾見基希, 郁万成,黄威, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.10 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  19. SiC溶液成長における機械学習を用いた固-液界面形状の時間変化の推定

    高石将輝, 党一帆, 沓掛健太朗, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  20. 放射光トポグラフィー高温その場観察による窒素添加4H-SiC結晶における積層欠陥エネルギーの定量化

    藤榮文博, 原田俊太, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  21. SiC溶液成長における境界層とステップバンチングの関係

    海野高天, 朱燦, 原田俊太, 劉欣博, 幾見基希, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  22. Si-Y溶媒を用いたSiC溶液成長中の自然核生成による多結晶析出の抑制

    幾見基希, 朱燦, 原田俊太, 党一帆, 海野高天, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  23. 溶液法によるBPDフリー3インチSiC結晶の成長

    朱燦, 郁万成, 黄威, 幾見基希, 党一帆, 海野高天, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  24. 機械学習支援による溶液成長法を用いた6インチSiC作製手法の確立

    郁万成, 朱燦, 角岡洋介, 黄威, 党一帆, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  25. 機械学習を用いたSiC溶液法の温度・流速分布の次元削減とロバスト性評価

    磯野優, 小山幸典, 沓掛健太郎, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  26. SiC昇華法におけるベイズ最適化を用いた高品質・高速成長条件の探索

    井上凱喜, 沓掛健太郎, 原田俊太,田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  27. 高温環境下におけるGaN基板中の貫通転位の構造変化の解明

    水野竜太郎, 藤榮文博, 山田永, 原田俊太, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  28. 時間的な温度差により熱エネルギーを電気に変換する熱電池の構築

    陳曄, 石川晃平, 原田俊太, 田川美穂, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

  29. 分子線エピタキシーによるBAs薄膜の成長条件の検討

    蔡沛陽, 畑野敬史, 原田俊太, 生田博志, 宇治原徹

    第49回結晶成長国内会議(JCCG-49)  2020.11.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

  30. Automatic Detection of Dislocation contrasts in Birefringence Image of SiC Wafers Using Variance Filter Method International conference

    Akira Kawata, Kenta Murayama, Shogo Sumitani, Shunta Harada

    2020 International Conference on Solid State Devices and Materials (SSDM 2020)  2020.9.29 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

  31. 素材プロセスにおける機械学習の応用法

    宇治原徹

    第81回応用物理学会秋季学術講演会  2020.9.8 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  32. Siエピタキシャル成長プロセスにおける適応的な制約を用いたベイズ最適化

    長田圭一, 沓掛健太朗, 山本純, 山下茂雄, 小寺崇, 永井勇太, 堀川智之, 松井孝太, 竹内一郎, 宇治原徹,

    第81回応用物理学会秋季学術講演会  2020.9.10 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  33. イオン注入シミュレーションに対する機械学習の適用

    蜂谷涼太, 沓掛健太朗, 原田俊太, 田川美穂, 宇治原徹

    第81回応用物理学会秋季学術講演会  2020.9.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

  34. 溶液法による高品質N型3インチ4H-SiC結晶の成長

    朱 燦, 郁 万成, 幾見 基希, 党 一帆, 安藤 圭理, 海野 高天, 原田 俊太, 田川 美穂, 宇治原 徹

    日本金属学会第166回公演大会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  35. X線トポグラフィー高温その場観察による4H-SiC結晶における積層欠陥エネルギーの直接測定

    藤榮 文博, 原田 俊太, 宇治原 徹

    日本金属学会第166回公演大会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  36. Numerical investigation of optimal control of SiC crystal growth in the RF TSSG system using machine learning International conference

    Wang L, Sekimoto A, Okano Y, Ujihara T

    SCEJ2020(International Chemical Engineering Symposia 2020) 

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    Event date: 2020.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  37. 深層強化学習を用いたRF-TSSG法によるSiC結晶成長プロセスの最適化

    岡野 泰則, ワン レイ, 竹原 悠人, 関本 敦, 宇治原 徹

    第67回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  38. 異なる熱伝導率を有する複数の断熱材を用いたRF-TSSG法によるSiC結晶成長時の温度場制御

    岡野 泰則, 竹原 悠人, ワン レイ, 関本 敦, 宇治原 徹

    第67回応用物理学会春季学術講演会 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学 四谷キャンパス   Country:Japan  

  39. In-situ observation of stacking faults expansion in 4H-SiC at high tempera-tures by synchrotron X-ray topography International conference

    Fumihiro Fujie, Shunta Harada, Hiromasa Suo, Tomohisa Kato, Toru Ujihara

    APWS2019 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  40. Effect of polyethylene glycol induced depletion attraction on DNA-functionalized nanoparticle crystalization International conference

    Shoko Kojima, Hayato Sumi, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara, Miho Tagawa

    OKINAWA COLLOIDS 2019 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  41. DNA-guided crystallization of nanoparticles: optimization of crystallization conditions and structure analysis International conference

    Miho Tagawa, Shoko Kojima, Hayato Sumi, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  42. Thermal Conduction in Magneli Phase Titanium Oxides with an Ordered Arrangement of Planar Faults in Nanoscale International conference

    Shunta Harada, Naoki Kosaka, Takashi Yagi, Katsushi Tanaka, Haruyuki Inui, Miho Tagawa, Toru Ujihara

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  43. Direct Observation of Stacking Fault Expansion Process in 4H-SiC by In-situ Synchrotron X-ray Topography International conference

    F.Fujie, S. Harada, H. Suo, T Kato, T.Ujihara

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  44. Application of C face dislocation conversion technique to 2-inch SiC crystal growth International conference

    X. Liu, C. Zhu, S. Harada, M. Tagawa, T. Ujihara

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  45. Application of high-quality SiC solution growth to large size crystal International conference

    C. Zhu, T. Endo, T. Unno, H. Koizumi, S.Harada, M. Tagawa, T. Ujihara

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  46. Manipulation" of Acetaminophen Crystallization and Discovery of Two- Step Dissolution Process by Plasmonic Optical Tweezers International conference

    Hiromasa Niinomi, Teruki Sugiyama, Miho Tagawa, Toru Ujihara, Katsuhiko Miyamoto, Takashige Omatsu, Jun Nozawa, Junpei Okada, Satoshi Uda

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  47. Change in thermal conductivity of amorphous WO3 films by lithium intercalation International conference

    Ryota Kobayashi, Tong Shen, Ayano Nakamura,Shunta Harada, Miho Tagawa, Toru Ujihara

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  48. Structural stability analysis of DNA-guided nanoparticle superlattice by direct dehydration International conference

    Hayato Sumi, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara, Miho Tagawa

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  49. Real-time visualization for temperature and fluid flow by using numerical simulation and neural network International conference

    Goki Hatasa, Yosuke Tsunookar, Can Zhu, Shunta Harada, Miho Tagawa, Toru Ujihara

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  50. Behavior of dislocations in GaN epitaxial layer propagating from substrate International conference

    Sho Inotsume, Nobuhiko Kokubo, Hisashi Yamada, Shoishi Onda, Jun Kojima, Junji Ohara Shunta Harada, Miho Tagawa, Toru Ujihara

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  51. Relationship between crystal orientation of Cu collectors and cycling stability of Li metal anodes International conference

    Kohei Ishikawa, Shunta Harada, Miho Tagawa, Toru Ujihara

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  52. Estimation of Physical Properties Using Machine Learning for Accurate Numerical Modeling of Crystal Growth International conference

    K. Ando, H. Lin, Y. Tsunooka, T. Narumi, C. Zhu, K. Kutsukake, S. Harada, K.Matsui, I. Takeuchi, Y. Koyama, Y. Kawajiri, M. Tagawa, T. Ujihara

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  53. Photoligation based RNA quantification system for high throughput and bias- less transcriptome analysis International conference

    M. Y okomori, M. Tagawa, S. Harada, T. Ujihara, A. Suyama

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  54. High-brightness pulsed electron microscopy toward advanced measurement of time-evolution in nanomaterials International conference

    Makoto Kuwahara, Rina Yokoi, Lila Mizuno, Wataru Nagata, Yuya Yoshida, Takafumi Ishida, Toru Ujihara, Koh Saitoh

    ICMaSS 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  55. 溶液法による高品質N型およびP型3インチ4H-SiC結晶の成長

    朱 燦, 原田 俊太, 田川 美穂, 宇治原 徹

    第48回結晶成長国内会議(JCCG-48) 

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    Event date: 2019.10 - 2019.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  56. Water resistance of AlN whiskers depending on the shape International conference

    NAKAMURA Akihito, HARADA Shunta, MATSUMOTO Masaki, WATANABE Shota, TAGAWA Miho, UJIHARA Toru

    PACRIM13 

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    Event date: 2019.10 - 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  57. 樹脂の高熱伝導率化を実現する AlNウィスカーフィラーの開発 Invited

    宇治原 徹

    粉体粉末冶金協会 2019年度秋季大会(第124 回講演大会) 

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    Event date: 2019.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学 豊田講堂シンポジオンホール   Country:Japan  

  58. 樹脂の高熱伝導率化を実現する AlNウィスカーフィラーの開発 Invited

    宇治原 徹

    一般社団法人 粉体粉末冶金協会 2019年度秋季大会 

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    Event date: 2019.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学 豊田講堂   Country:Japan  

  59. AI 技術を用いたSiC 溶液成長技術の確立 Invited

    宇治原 徹

    産総研コンソーシアム名古屋工業技術協会 2019年度第1回研究会 

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    Event date: 2019.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋駅前イノベーションハブ   Country:Japan  

  60. AI技術を用いたSiC溶液成長技術の確立 Invited

    宇治原 徹

    産総研コンソーシアム名古屋工業技術協会 2019年度第1回研究会 「AI、機械学習の応用事例」 

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    Event date: 2019.10

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:名古屋駅前イノベーションハブ 会議室   Country:Japan  

  61. 結晶成長における機械学習活用(SiC溶液成長を例に) Invited

    宇治原 徹

    第53回 化学工学の進歩講習会「最新情報技術活用によるプロセス産業スマート化- AI,IoT,MI の基礎から最前線まで -」 

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    Event date: 2019.10

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:名古屋市工業研究所(名古屋市熱田区六番3-4-41 )第1 会議室   Country:Japan  

  62. 樹脂の高熱伝導率化を実現する AlNウィスカーフィラーの開発 Invited

    宇治原 徹

    粉体粉末冶金協会 2019年度秋季大会(第124 回講演大会) 

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    Event date: 2019.10

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:名古屋大学 豊田講堂   Country:Japan  

  63. The control of conduction type in high quality bulk solution growth of SiC International conference

    Can Zhu, Shunta Harada, Miho Tagawa, Toru Ujihara

    ICSCRM2019 

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    Event date: 2019.9 - 2019.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  64. Threading Screw Dislocations Conversion and Suppression of Inclusions in 3-inch 4° off-axis C-face 4H-SiC Solution Growth with Pure Si International conference

    TAKAMA UNNO, CAN ZHU, SHUNTA HARADA, HARUHIKO KOIZUMI, MIHO TAGAWA, TORU UJIHARA

    ICSCRM2019 

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    Event date: 2019.9 - 2019.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  65. Application of high-quality SiC solution growth to large size crystal International conference

    Can Zhu, Tomoki Endo, Takama Unno, Haruhiko Koizumi, Shunta Harada, Miho Tagawa, Toru Ujihara

    ICSCRM2019 

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    Event date: 2019.9 - 2019.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  66. Nitrogen Concentration Dependence of Expansion Behavior of Double Shockley Stacking Faults in 4H-SiC Studied by In-situ Synchrotron X-ray Topography International conference

    Fumihiro Fujie, Shunta Harada, Hiromasa Suo, Tomohisa Kato, Toru Ujihara

    ICSCRM2019 

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    Event date: 2019.9 - 2019.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  67. Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping Invited

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  68. 機械学習を用いたµビームX線回折マッピングの特徴領域の効率的推定

    穂積 祥太, 沓掛 健太朗, 松井 孝太, 佐々木 拓生, 宇治原 徹, 竹内 一郎

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学 札幌キャンパス   Country:Japan  

  69. AlGaN/GaN HEMTのIV特性に対する機械学習 International conference

    蜂谷 涼太, 沓掛 健太朗, 原田 俊太, 田川 美 穂, 宇治原 徹

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:北海道大学 札幌キャンパス   Country:Japan  

  70. SiC結晶成長シミュレーションのノンパラメトリック機械学習

    小山 幸典, 角岡 洋介, 沓掛 健太朗, 宇治原 徹

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:北海道大学 札幌キャンパス   Country:Japan  

  71. SiC溶液成長における温度・流速の局所分布からの全体分布予測

    高石 将輝, 小山 幸典, 沓掛 健太朗, 原田 俊太, 田川 美穂, 宇治原 徹

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学 札幌キャンパス   Country:Japan  

  72. X線小角散乱法と回転結晶法を用いたコロイド単結晶中 の格子乱れの解析

    鷲見 隼人, 太田 昇, 関口 博史, 原田 俊太, 宇治原 徹, 田川 美穂

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:北海道大学 札幌キャンパス   Country:Japan  

  73. 水素挿入に伴う結晶性WO3薄膜の熱伝導率の変化

    沈 統, 小林 竜大, 石川 晃平, 原田 俊太, 宇治原 徹, 田川 美穂

    第80回応用物理学会秋季学術講演会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学 札幌キャンパス   Country:Japan  

  74. 結晶成長プロセス最適化における機械学習の活用 Invited

    宇治原徹

    日本物理学会2019秋季大会 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:岐阜大学   Country:Japan  

  75. Analysis of Inclined Threading Dislocation from GaN [0001] by Raman mapping International conference

    N. Kokubo, S. Inotsume, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M. Shimizu, S. Harada, M. Tagawa, T. Ujihara

    SSDM 2019 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  76. 機械学習によるSiC結晶成長プロセスの最適化と大口径化の試み Invited

    宇治原 徹

    ポスト「京」重点課題⑧・重点課題⑥ 第3 回HPC ものづくり統合ワークショップ 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:東京大学生産技術研究所内An 棟4 階セミナー室   Country:Japan  

  77. HIGH QUALITY AND INCLUSION SUPPRESSION BY SWITCHING FLOW IN 3-INCH SIC SOLUTION GROWTH International conference

    C. Zhu, T. Endo, H. Lin, H. Koizumi, S. Harada, M. Tagawa, T.Ujihara

    ICCGE-19 

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    Event date: 2019.7 - 2019.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Keystone Resort and Conference Center, Colorado   Country:United States  

  78. OPTICAL ANOMALY OF GAN AND SIC CRSYTALS AS OBSERVED BY NEW OPTICAL MAIN AXIS MAPPING International conference

    K. Tsukamoto, M. Imanishi, H. Koizumi, T. Onuma, T. Ujihara, Y. Mori

    ICCGE-19 

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    Event date: 2019.7 - 2019.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Keystone Resort and Conference Center, Colorado   Country:United States  

  79. ESTIMATION OF HIGH-TEMPERATURE PHYSICAL PROPERTIES BY MACHINE LEARNING TOWARD ACCURATE NUMERICAL MODELING OF CRYSTAL GROWTH International conference

    K. Ando, H. Lin, Y. Tsunooka, T. Narumi, C. Zhu, K. Kutsukake, S. Harada, K. Matsui, I. Takeuchi, Y. Koyama, Y. Kawajiri, M. Tagawa, T. Ujihara

    ICCGE-19 

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    Event date: 2019.7 - 2019.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Keystone Resort and Conference Center, Colorado   Country:United States  

  80. THE OPTIMUM DESIGN OF DNA-GUIDED NANOPARTICLE SUPERLATTICES FOR DIRECT DEHYDRATION International conference

    H. Sumi, T. Isogai, S. Kojima, N. Ohta, H. Sekiguchi, S. Harada, T. Ujihara, M. Tagawa

    ICCGE-19 

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    Event date: 2019.7 - 2019.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Keystone Resort and Conference Center, Colorado   Country:United States  

  81. IN-SITU SYNCHROTRON X-RAY TOPOGRAPHY STUDIES OF STACKING FAULTS EXPANSION PROCESS IN N-TYPE 4H-SIC CRYSTALS International conference

    F. Fujie, S. Harada, H. Suo, T. Kato, T. Ujihara

    ICCGE-19 

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    Event date: 2019.7 - 2019.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Keystone Resort and Conference Center, Colorado   Country:United States  

  82. DESIGN OF SIC SOLUTION GROWTH CONDITION UTILIZING PREDICTION MODEL CONSTRUCTED BY MACHINE LEARNING AND MATHEMATICAL OPTIMIZATION International conference

    S. Harada, H. Lin, C. Zhu, T. Narumi, Y. Tsunooka, T. Endo, K. Ando, K. Kutsukake, M. Tagawa, T. Ujihara

    ICCGE-19 

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    Event date: 2019.7 - 2019.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Keystone Resort and Conference Center, Colorado   Country:United States  

  83. PREDICTION MODEL OF COMPUTATIONAL FLUID DYNAMICS BASED ON NEURAL NETWORK CONSTRUCTED BY MACHINE LEARNING AND PROCESS OPTIMIZATION OF SIC SOLUTION GROWTH Invited International conference

    T. Ujihara, Y. Tsunooka, H. Lin, C. Zhu, T. Narumi, K. Kutsukake, S. Harada, M. Tagawa

    ICCGE-19 

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    Event date: 2019.7 - 2019.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Keystone Resort and Conference Center, Colorado   Country:United States  

  84. MANIPULATION OF ACETAMINOPHEN CRYSTALLIZATION AND DISCOVERY OF TWO-STEP DISSOLUTION PROCESS BY PLASMONIC OPTICAL TWEEZERS Invited International conference

    H. Niinomi, T. Sugiyama, M. Tagawa, T. Ujihara, K. Miyamoto, T.Omatsu, J. Nozawa, J. Okada, S. Uda

    ICCGE-19 

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    Event date: 2019.7 - 2019.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Keystone Resort and Conference Center, Colorado   Country:United States  

  85. VIRTUAL VISUALIZATION SYSTEM FOR INNER STATE IN HIGH-TEMPERATURE SOLUTION GROWTH USING PREDICTION MODEL OF COMPUTATIONAL FLUID DYNAMICS CONSTRUCTED BY MACHINE LEARNING International conference

    T. Ujihara, G. Hatasa, K. Murayama, Y. Tsunooka, S. Harada, M.Tagawa

    ICCGE-19 

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    Event date: 2019.7 - 2019.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Keystone Resort and Conference Center, Colorado   Country:United States  

  86. SiC溶液成⻑法の最適条件予測におけるデータ科学の活⽤ Invited

    宇治原徹

    素材プロセシング第69委員会 第2分科会(新素材関連技術) 第73回研究会 

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    Event date: 2019.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東北大学   Country:Japan  

  87. 機械学習によるSiC溶液成長シミュレーションの代理モデルの構築と成長条件最適化 Invited

    宇治原徹

    応用物理学会 シリコンテクノロジー分科会 第217 回研究集会 

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    Event date: 2019.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:応物会館   Country:Japan  

  88. Behavior of Dislocations Propagating from GaN Substrate to Epitaxial Layer International conference

    Sho Inotsume, Nobuhiko Kokubo, Hisashi Yamada, Shoichi Onda, Jun Kojima, Junji Ohara, Shunta Harada, Miho Tagawa, Toru Ujihara

    13th International Conference on Nitride Semiconductors (ICNS-13) 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hyatt Regency Bellevue Washington   Country:United States  

  89. A Novel Birefringent Observation for Analyzing Dislocations in GaN International conference

    Atsushi Tanaka, Shunta Harada, Kenji Hanada, Yoshio Honda,Toru Ujihara, Hiroshi Amano

    13th International Conference on Nitride Semiconductors (ICNS-13) 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hyatt Regency Bellevue Washington   Country:United States  

  90. SiC溶液成長法の最適条件予測におけるデータ科学の活用 Invited

    宇治原 徹

    日本学術振興会 素材プロセシング第69委員会 第2分科会(新素材関連技術)第73回研究会 

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    Event date: 2019.7

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:東北大学 多元物質科学研究所大会議室(片平キャンパス E03 1階)   Country:Japan  

  91. 結晶成長実験における機械学習の応用(SiC溶液成長を例に) Invited

    宇治原徹

    日本結晶成長学会 第11回ナノ構造・エピタキシャル成長分科会講演会 

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    Event date: 2019.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:広島大学   Country:Japan  

  92. プラズモン光ピンセットによる有機分子の結晶化操作と二段階溶解過程の発見

    新家寛正、杉山輝樹、田川美穂、宇治原徹、宮本克彦、尾松考茂、野澤純、岡田純平、宇田聡

    日本地球惑星科学連合(JpGU2019) 

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    Event date: 2019.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:幕張メッセ国際会議場,国際展示場   Country:Japan  

  93. DNAガイドのナノ粒子結晶化:結晶化条件の最適化と構造解析 Invited

    田川美穂、小島憧子、鷲見隼人、西部愛里紗、磯貝卓巳、横森真麻、原田俊太、宇治原徹、塚本勝男

    日本地球惑星科学連合(JpGU2019) 

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    Event date: 2019.5

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:幕張メッセ国際会議場,国際展示場   Country:Japan  

  94. Machine Learning for SiC top-seeded solution growth- Prediction, Optimization and Visualization International conference

    Toru Ujihara, Yosuke Tsunooka, Goki Hatasa, Can Zhu, Kentaro Kutsukake, Taka Narumi, Shunta Harada, Miho Tagawa

    CS-MANTECH 

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    Event date: 2019.4 - 2019.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hyatt Regency Minneapolis   Country:United States  

  95. Machine learning for SiC crystal growth (modeling, optimization and visualization) Invited International conference

    T. Ujihara

    International Symposium & School on Crystal Growth Fundamentals(ISSCGF) 

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    Event date: 2019.4 - 2019.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Convention Hall of Hotel Sakan, Akiu, Sendai, Japan   Country:Japan  

  96. Lithium Intercalation-Induced Thermal Conductivity Change of AmorphousWO3 Films International conference

    Ryuta Kobayashi,Tong Shen,Ayano Nakamura, Shunta Harada,Miho Tagawa, Toru Ujihara

    MRS Spring Meeting & Exhibit 

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    Event date: 2019.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Phoenix Convention Center   Country:United States  

  97. Thermal Conduction in Titanium Oxide with an Ordered Arrangement of Planar Faults in Nanoscale International conference

    Shunta Harada, Naoki Kosaka, Takashi Yagi, Katsushi Tanaka, Haruyuki Iuni, Miho Tagawa, Toru Ujihara

    MRS Spring Meeting & Exhibit 

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    Event date: 2019.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Phoenix Convention Center   Country:United States  

  98. 結晶成長実験における機械学習の応用(SiC溶液成長を例に) Invited

    宇治原徹

    平成31年度日本セラミックス協会関東支部 支部大会・支部講演会 

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    Event date: 2019.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京工業大学 大岡山キャンパス、南8号館623教室   Country:Japan  

  99. 結晶成長における機械学習の活用(SiC溶液成長を例にして) Invited

    宇治原 徹

    日本セラミックス協会「マテリアルズ・インフォマティクスを用いた新材料開発」 

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    Event date: 2019.4

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:東京工業大学 大岡山キャンパス南8号館623教室   Country:Japan  

  100. 炭化珪素結晶成長シミュレーションに対する機械学習

    小山幸典, 角岡洋介, 沓掛健太朗, 宇治原徹

    日本金属学会 2019年春期講演大会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京電機大学 東京千住キャンパス   Country:Japan  

  101. 機械学習モデルと実験結果の比較による物性値推定手法のSiC溶液成長における融液物性への適用

    安藤圭理, 林宏益, 角岡洋介, 鳴海大翔, 朱燦, 沓掛健太朗, 原田俊, 松井孝太, 竹内一郎, 小山幸典, 宇治原徹

    日本金属学会 2019年春期講演大会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京電機大学 東京千住キャンパス   Country:Japan  

  102. 機械学習を用いた SiC 溶液成長法の熱流動の高速予測と育成条件の最適化に関する基礎検討

    鳴海大翔, 林宏益, 角岡洋介, 安藤圭理, 朱燦, 沓掛健太朗, 原田俊太, 宇治原徹

    日本金属学会 2019年春期講演大会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京電機大学 東京千住キャンパス   Country:Japan  

  103. SiC 溶液成長過程における転位変換現象を利用した高品質結晶成長

    原田俊太, 朱燦, 遠藤友樹, 小泉晴比古, 鳴海大翔, 田川美穂, 宇治原徹

    日本金属学会 2019年春期講演大会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京電機大学 東京千住キャンパス   Country:Japan  

  104. ワイドギャップ結晶の材料学と高温プロセッシング

    吉川健, 福山博之, 宇治原徹, 美濃輪武久

    日本金属学会 2019年春期講演大会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京電機大学 東京千住キャンパス   Country:Japan  

  105. 顕微ラマン分光法によるGaN中の転位欠陥解析と機械学習の活用

    宇治原徹, 小久保信彦, 角岡洋介, 藤榮文博, 井爪将, 恩田正一, 山田永, 清水三聡, 原田俊太, 田川美穂

    2019年 第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  106. 機械学習を用いた昇華法SiC結晶成長シミュレーションの高速予測

    江逸群, 角岡洋介, 畑佐豪記, 鳴海大翔, 沓掛健太朗, 原田俊太, 田川美穂, 宇治原徹

    2019年 第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  107. 大口径化にむけた機械学習によるSiC溶液成長の最適成長条件の決定

    宇治原徹, 角岡洋介, 遠藤友樹, 朱燦, 沓掛健太朗, 鳴海大翔, 三谷武志, 加藤智久, 田川美穂, 原田俊太

    2019年 第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  108. 3インチ4度オフ種結晶上へのSiC溶液成長における貫通転位変換とインクルージョン抑制の両立

    海野高天, 朱燦, 原田俊太, 小泉晴比古, 田川美穂, 宇治原徹

    2019年 第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  109. 高熱伝導樹脂を実現するAlNウィスカーフィラーの開発とベンチャー

    宇治原徹

    2019年 第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  110. 機械学習によって構築した温度分布予測モデルによる熱伝導率推定

    樋口雄介, 角岡洋介, 沓掛健太朗, 鳴海大翔, 原田俊太, 田川美穂, 宇治原徹

    2019年 第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  111. SiC結晶成長シミュレーションの機械学習

    小山幸典, 角岡洋介, 沓掛健太朗, 宇治原徹

    2019年 第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  112. 機械学習による結晶成長シミュレーション回帰モデルの構築とその応用

    宇治原徹, 角岡洋介, 朱燦, 沓掛健太朗, 鳴海大翔, 田川美穂, 原田俊太

    2019年 第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  113. Doc2Vecを用いた学会発表概要集の検索手法の検討

    石川晃平, 沓掛健太朗 , 原田俊太, 田川美穂, 宇治原徹

    2019年 第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  114. Li挿入によるWO3薄膜の構造及び熱伝導率の変化

    小林竜大, 沈統, 中村彩乃, 原田俊太, 田川美穂, 宇治原徹

    2019年 第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  115. 逆解析によるRF-TSSG 法によるSiC 結晶成長時のるつぼ温度最適化

    岡野泰則, 堀内鷹之, 関本敦, 宇治原徹

    2019年 第66回応用物理学会春季学術講演会 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  116. シミュレーションと機械学習を用いた結晶成長プロセスの最適化

    角岡洋介, 原田俊太, 田川美穂, 宇治原徹

    オープンCAEシンポジウム2018 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪府立国際会議場   Country:Japan  

  117. Machine Learning for SiC top-seeded solution growth - Prediction, Optimization and Visualization - Invited International conference

    Toru Ujihara

    MSST2018 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kanto Gakuin University Shonan-Odawara Campus, Odawara Japan   Country:Japan  

  118. Change in thermal conductivity of rutile-type TiO2 by introducing periodic planar faults International conference

    N. Kosaka, T. Yagi, K. Tanaka, H. Inui, M. Tagawa, T. Ujihara, S. Harada

    NMHT-VI: Nanoscale and Microscale Heat Transfer 2018 

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    Event date: 2018.12

    Language:English   Presentation type:Poster presentation  

    Country:Finland  

  119. Machine Learning for SiC top-seeded solution growth - Prediction, Optimization and Visualization - Invited International conference

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  120. 金属 Zn 負極の方位配向がデンドライト状析出の形成に及ぼす影響

    森仁志, 石川晃平, 原田俊太, 田川美穂, 宇治原徹

    第59回 電池討論会 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪府立国際会議場   Country:Japan  

  121. 金属 Li 負極における単結晶 Cu 集電体の結晶方位とサイクル特性の関係

    石川晃平, 原田俊太, 田川美穂, 宇治原徹

    第59回 電池討論会 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪府立国際会議場   Country:Japan  

  122. Dehydration stability analysis of DNA-guided nanoparticle superlattices International conference

    H. Sumi, T. Isogai, S. Kojima, S. Harada, T. Ujihara, M. Tagawa

    2018 MRS fall meeting(MATERIALS RESEARCH SOSIETY) 

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    Event date: 2018.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  123. Nondestructive Visualization of Threading Dislocations in GaN by Micro Raman Mapping International conference

    N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M. Shimizu, S. Harada, M. Tagawa, T. Ujihara

    International Workshop on Nitride Semiconductors 2018(IWN2018) 

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    Event date: 2018.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  124. ラマン分光法と機械学習によるGaN単結晶における貫通転位の歪み場解析 Invited

    小久保信彦, 角岡洋介, 藤榮文博, 大原淳士, 恩田正一, 山田永, 清水三聡, 原田俊太, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第5回講演会 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都テルサ   Country:Japan  

  125. SiC溶液成長における機械学習を用いた成長条件の最適化

    角岡洋介, 鳴海大翔 , 安藤圭理, 沓掛健太朗, 朱燦, 林宏益, 原田俊太, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第5回講演会 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都テルサ   Country:Japan  

  126. Structural change and stability analysis of DNA-guided nanoparticle fcc superlattice by dehydration International conference

    H. Sumi, T. Isogai, S. Kojima, N. Ohta, H. Sekiguchi, S. Harada, T. Ujihara, M. Tagawa

    International Symposium & School on Crystal Growth Fundamentals(ISSCGF) 

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    Event date: 2018.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  127. Machine learning for SiC crystal growth (modeling, optimization and visualization) International conference

    T. Ujihara

    International Symposium & School on Crystal Growth Fundamentals(ISSCGF) 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  128. 樹脂の熱伝導率を向上させるAlN ウィスカーフィラーについての開発 Invited

    宇治原 徹

    第26 回フィラーシンポジウム 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ホテルグランテラス富山   Country:Japan  

  129. タンパク質をモデルとした溶液成長における溶媒和構造と結晶性との相関

    小泉晴比古, 宇田聡, 塚本勝男, 橘勝, 小島謙一, 宇治原徹

    第47回結晶成長国内会議 

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    Event date: 2018.10 - 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市戦災復興記念館   Country:Japan  

  130. DNA修飾ナノ粒子の結晶化における溶媒組成の結晶構造への影響

    磯貝卓巳, 鷲見隼人, 小島憧子, 太田昇, 関口博史, 原田俊太, 宇治原徹, 田川美穂

    第47回結晶成長国内会議 

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    Event date: 2018.10 - 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市戦災復興記念館   Country:Japan  

  131. DNA修飾ナノ粒子を用いたコロイド単結晶の脱水に伴う構造変化と安定性の解析

    鷲見隼人, 磯貝卓巳, 小島憧子, 太田昇, 関口博史, 原田俊太, 宇治原徹, 田川美穂

    第47回結晶成長国内会議 

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    Event date: 2018.10 - 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市戦災復興記念館   Country:Japan  

  132. TSSG法SiC結晶成長におけるるつぼ温度分布最適化に向けた逆解析

    堀内鷹之, 関本敦, 岡野泰則, 宇治原徹

    第47回結晶成長国内会議 

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    Event date: 2018.10 - 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市戦災復興記念館   Country:Japan  

  133. 機械学習により最適化されたSiCウエハのX線侵入深さに着眼した深さ方向の歪み分布の定量化

    小泉晴比古, 花田賢志, 長田圭一, 成田潔, 原田俊太, 田川美穂, 宇治原徹

    第47回結晶成長国内会議 

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    Event date: 2018.10 - 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市戦災復興記念館   Country:Japan  

  134. Prediction System of CFD Simulation in Solution Growth Constructed by Machine Learningapplication for Sic Top-seeded Solution Growth International conference

    T. Ujihara, Y. Tsunooka, T. Endo, C. Zhu, S. Harada

    International Workshop on Modeling in Crystal Growth (IWMCG-9) 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  135. Numerical Analysis of Three-dimensional Marangoni Convection During SiC Crystal Growth by the RF-TSSG Method International conference

    L. Wang, T. Horiuchi, A. Sekimoto, Y. Okano, T. Ujihara, S, Dost

    International Workshop on Modeling in Crystal Growth (IWMCG-9) 

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    Event date: 2018.10

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  136. Numerical Investigation of Optimal Crystal Growth Furnace Design in the RF-heating TSSG Process International conference

    T. Horiuchi, L. Wang, T. Yamamoto, A. Sekimoto, Y. Okano, T. Ujihara

    International Workshop on Modeling in Crystal Growth (IWMCG-9) 

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    Event date: 2018.10

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  137. High-quality SiC crystal grown with solution method by controlling macro-step structure International conference

    T. Ujihara

    Mathematical Aspects of Surface and Interface Dynamics 16 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  138. High-quality SiC crystal grown with solution method by controlling macro-step structure Invited International conference

    Ujihara T

    Mathematical Aspects of Surface and Interface Dynamics 14研究集会 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  139. Effect of Crystal Orientation of Cu Current Collectors on Cycling Stability of Li Metal Anodes International conference

    K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara

    AiMES 2018 ECS and SMEQ Joint International Meeting 

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    Event date: 2018.9 - 2018.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Mexico  

  140. Change in Thermal Conductivity By Hydrogen Intercalation in Amorphous WO3 Film International conference

    A. Nakamura, S. Harada, R. Kobayashi, M. Tagawa, T. Ujihara

    AiMES 2018 ECS and SMEQ Joint International Meeting 

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    Event date: 2018.9 - 2018.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Mexico  

  141. プロジェクションマッピングと機械学習を用いた結晶成長プロセスにおける熱流動の可視化システムの構築

    畑佐豪記, 角岡洋介, 李相一, 村山健太, 朱燦, 原田俊太, 田川美穂, 石黒祥生, 宇治原徹

    第23回日本バーチャルリアリティ学会大会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学青葉山新キャンパス 青葉山コモンズ   Country:Japan  

  142. 窒素・ボロン共添加SiC結晶における積層欠陥挙動のX線トポグラフィーその場観察

    藤榮文博, 原田俊太, 周防裕政, 加藤智久, 田川美穂, 宇治原徹

    公益社団法人 日本金属学会 2018 年秋期講演(第 163 回) 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  143. 還元熱処理により作製した Magneli 相酸化チタンの周期構 造と熱伝導特性

    原田俊太, 小坂直輝, 八木貴志, 田中克志, 乾晴行, 田川美穂, 宇治原徹

    公益社団法人 日本金属学会 2018 年秋期講演(第 163 回) 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  144. 随伴感度解析を用いたTSSG法SiC結晶成長におけるるつぼ内熱対流の最適化

    堀内鷹之, 関本敦, 岡野泰則, 宇治原徹

    化学工学会 第50回秋季大会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:鹿児島大学 郡元キャンパス   Country:Japan  

  145. AI技術で結晶成長研究開発を桁違いに高速にする -SiC結 晶成長を例にして- Invited

    宇治原徹

    2018年 第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋国際会議場   Country:Japan  

  146. High quality and inclusion suppression by switching flow in 3-inch SiC solution growth

    C. Zhu, T. Endo , S. Harada, M. Tagawa, T. Ujihara

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  147. ルチル型TiO2単結晶への周期的な面欠陥導入に伴う熱伝導率の変化

    小坂直輝, 八木貴志, 田中克志, 乾晴行, 田川美穂, 宇治原徹, 原田俊太

    2018年 第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  148. ベイズ最適化を用いたSiC研削条件の探索

    長田圭一, 角岡洋介, 成田潔, 小泉晴比古, 沓掛健太朗, 原田俊太, 田川美穂, 宇治原徹

    2018年 第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  149. SiC溶液成長における熱流体解析の機械学習を用いたパラメータ影響の可視化

    沓掛健太朗, 角岡洋介, 長田圭一, 安藤圭理, 林宏益, 朱燦, 鳴海大翔, 原田俊太, 田川美穂, 宇治原徹

    2018年 第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  150. 機械学習によるGaN MOVPE結晶成長シミュレーション結果の予測

    富澤巧, 川上賢人, 角岡洋介, 洗平昌晃, 岡本直也, 原田俊太, 芳松克則, 宇治原徹, 白石賢二

    2018年 第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  151. 枯渇効果を利用したDNA修飾ナノ粒子結晶のサイズ向上

    小島憧子, 鷲見隼人, 磯貝卓巳, 太田昇, 関口博史, 原田俊太, 宇治原徹, 田川美穂

    2018年 第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  152. ラマン分光法によるGaN単結晶における貫通転位の歪み場解析 Invited

    小久保信彦, 角岡洋介, 藤榮文博, 大原淳士, 恩田正一,山田永, 清水三聡, 原田俊太, 田川美穂, 宇治原徹

    2018年 第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋国際会議場   Country:Japan  

  153. GaN基板からエピタキシャル膜へ伝播する転位の分類と挙動の解明

    井爪将, 小久保信彦, 山田永, 恩田正一, 大原淳士, 原田俊太, 田川美穂, 宇治原徹

    2018年 第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  154. カチオンによるDNA修飾ナノ粒子の配列制御

    磯貝卓巳, 鷲見隼人, 小島憧子, 太田昇, 関口博史, 原田俊太, 宇治原徹, 田川美穂

    2018年 第79回応用物理学会秋季学術講演会 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  155. AlN分散樹脂における分散剤表面修飾による熱伝導率向上

    安田拓実, 宇治原徹, 原田俊太, 竹内幸久

    日本セラミックス協会 第31回秋季シンポジウム 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋工業大学   Country:Japan  

  156. In-situ synchrotron X-ray topography observation of stacking faults in SiC International conference

    F. Fujie, S. Harada, H. Suo, H. Koizumi, T. Kato, M. Tagawa, T. Ujihara

    the 14th Biennial Conference on High-Resolution X-Ray Diffraction and Imaging (XTOP 2018) 

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    Event date: 2018.9

    Language:English   Presentation type:Poster presentation  

    Country:Italy  

  157. Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiC Wafer Fabricated by the Solution Growth Method International conference

    K. Seki, K. Kusunoki, S. Harada, T. Ujihara

    European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) 

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    Event date: 2018.9

    Language:English   Presentation type:Poster presentation  

    Country:United Kingdom  

  158. Application of C face dislocation conversion technique to 2-inch SiC crystal growth International conference

    X. Liu, C. Zhu, S. Harada, M. Tagawa, T. Ujihara

    European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) 

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:United Kingdom  

  159. Efficient search technique of ideal conditions in high quality SiC solution growth using prediction mogel made by machine learing International conference

    Y. Tsunooka, S. Harada, M. Tagawa, T. Ujihara

    European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) 

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    Event date: 2018.9

    Language:English   Presentation type:Poster presentation  

    Country:United Kingdom  

  160. Control of macrostep eight by switching solution flow during solution growth of SiC International conference

    T. Endo, C. Zhu, S. Harada, H. Koizumi, M. Tagawa, T. Ujihara

    European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) 

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    Event date: 2018.9

    Language:English   Presentation type:Poster presentation  

    Country:United Kingdom  

  161. “AI技術で結晶成長研究開発を桁違いに高速にする”-SiC結晶成長を例にして- Invited

    宇治原 徹

    第79回応用物理学会秋季学術講演会インフォーマルミーティングTIA-EXA若手研究者の集い 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場2号館 221A   Country:Japan  

  162. “AI技術で結晶成長研究開発を桁違いに高速にする”-SiC結晶成長を例にして- Invited

    宇治原 徹

    第79回応用物理学会秋季学術講演会インフォーマルミーティングTIA-EXA若手研究者の集い 第1回 “今から学ぶAI・機械学習” 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋国際会議場2号館    Country:Japan  

  163. Present status of machine learning technology for high quality crystal growth and the collaboration with student startups International conference

    T.Ujihara

    he 3rd Academic Seminar on Material Science and Engineering 

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    Event date: 2018.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Singapore  

  164. DNA-controlled assembly of 2D nanoparticle lattices on lipid bilayers International conference

    T. Isogai, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa

    17th International Conference on Organized Molecular Films(ICOMF17) 

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    Event date: 2018.7

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  165. Process Design of SiC Solution Growth with Machine Learning Technology Invited International conference

    T. Ujihara

    Asia-Pacific Conference on Silicon Carbide and Related Materials(APCSCRM2018) 

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Korea, Republic of  

  166. 溶液成長法による高品質SiC結晶成長と機械学習の活用 Invited

    宇治原徹

    大阪電気通信大学エレクトロニクス基礎研究所ワークショップ 

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    Event date: 2018.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:大阪電気通信大学   Country:Japan  

  167. 溶液法による高品質SiC結晶成長と機械学習の活用 Invited

    宇治原 徹

    日本結晶成長学会 特別講演会「パワーエレクトロニクス結晶の最前線」 

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    Event date: 2018.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都国立博物館地下講演会場   Country:Japan  

  168. 溶液成長法による高品質SiC 結晶成長と機械学習の活用 Invited

    宇治原 徹

    大阪電気通信大学エレクトロニクス基礎研究所ワークショップ 

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    Event date: 2018.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  169. 題目:溶液法による高品質SiC結晶成長と機械学習の活用 Invited

    宇治原 徹

    日本結晶成長学会 特別講演会「パワーエレクトロニクス結晶の最前線」 

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    Event date: 2018.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:京都国立博物館地下講演会場   Country:Japan  

  170. SiC の結晶成長と加工における機械学習の活用例 Invited

    宇治原 徹

    プラナリゼーションCMPとその応用技術専門委員会 第165回研究会 

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    Event date: 2018.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:主婦会館プラザエフ(東京都千代田区)   Country:Japan  

  171. 機械学習を活用した最適成長条件の探索と大口径化に向けた検討

    宇治原徹

    日本結晶成長学会第102回バルク成長分科会研究会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学   Country:Japan  

  172. 機械学習による流体シミュレーション結果の高速予測と SiC 溶液成長への応用

    宇治原徹, 角岡洋介, 畑佐豪記, 林宏益, 遠藤友樹, 朱燦, 村井良多, 原田俊太, 田川美穂

    日本金属学会 2018年春期(第162回)講演大会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:千葉工業大学 新習志野キャンパス   Country:Japan  

  173. RF-TSSG法によるSiC結晶成長時の移動現象の3次元解析

    岡野泰則, ワンライ, 堀内鷹之, 関本敦, 宇治原徹

    第65回応用物理学会 春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学 早稲田キャンパス   Country:Japan  

  174. NEA半導体光陰極から放出される電子のもつエミッタン スと高い空間コヒーレンス

    桑原真人, 浅野秀文, 宇治原徹, 田中信夫, 齋藤晃

    第65回応用物理学会 春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学 早稲田キャンパス   Country:Japan  

  175. 還元熱処理により作製した酸化チタン自然超格子の周期構造解析

    原田俊太, 田中克志, 乾晴行, 田川美穂, 宇治原徹

    第65回応用物理学会 春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学 早稲田キャンパス   Country:Japan  

  176. ラマン分光法によるGaN単結晶における貫通転位の歪み場解析

    小久保信彦, 角岡洋介, 藤榮文博, 大原淳士, 恩田正一, 山田永, 清水三聡, 原田俊太, 田川美穂, 宇治原徹

    第65回応用物理学会 春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学 早稲田キャンパス   Country:Japan  

  177. SiC溶液成長における成長中の溶液流れ切り替えによる結晶全面のステップフローの安定化

    遠藤友樹, 朱燦, 村山健太, 原田俊太, 田川美穂, 宇治原徹

    第65回応用物理学会 春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学 早稲田キャンパス   Country:Japan  

  178. SiC溶液成長における熱流体解析と機械学習を用いた最適化手法の提案

    角岡洋介, 小久保信彦, 原田俊太, 田川美穂, 宇治原徹

    第65回応用物理学会 春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学 早稲田キャンパス   Country:Japan  

  179. 放射光トポグラフィーによる溶液法ウエハ上へのエピ成長過程における転位伝播挙動の評価

    関和明, 楠一彦, 原田俊太, 宇治原徹

    第65回応用物理学会 春季学術講演会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学 早稲田キャンパス   Country:Japan  

  180. 焼結助材を用いない窒化アルミニウム基板作製法

    清水啓希, 宇治原徹, 原田俊太, 竹内幸久

    公益社団法人日本セラミックス協会 2018年年会 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  181. 結晶成長プロセスにおける高速最適化と可視化技術 Invited

    宇治原徹

    金属学会シンポジウム 材料評価・プロセスにおける「使える」インフォマティクス 

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    Event date: 2018.2

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学   Country:Japan  

  182. Two-dimensional assembly of DNA-functionalized gold nanoparticles on lipid bilayer International conference

    T. Isogai, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa

    The first International Workshop by the 174th Committee JSPS  

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    Event date: 2017.12

    Language:English   Presentation type:Poster presentation  

    Venue:Kyoto Terrsa   Country:Japan  

  183. 機械学習による熱流体解析の高速化における予測精度

    畑佐豪記, 角岡洋介, 村井良多, 村山健太, 朱燦, 原田俊太, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ホテルコンコルド浜松   Country:Japan  

  184. 機械学習を活用したSiC溶液成長プロセス・ビュジュアライゼーション

    宇治原徹, 畑佐豪記, 角岡洋介, 村山健太, 原田俊太, 田川美穂

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ホテルコンコルド浜松   Country:Japan  

  185. 結晶光学軸方位分布からみたGaNやSiCの光学異常

    塚本勝男, 今西正幸, 村山健太, 森勇介

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ホテルコンコルド浜松   Country:Japan  

  186. キラルな光場中でのキラル結晶化におけるキラリティの偏り

    新家寛正, 杉山輝樹, 田川美穂, 宇治原徹, 丸山美帆子, 森勇介, 宮本克彦, 尾松孝茂

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Symposium, workshop panel (public)  

    Venue:ホテルコンコルド浜松   Country:Japan  

  187. 数値解析を用いた誘導加熱TSSG法によるSiC結晶成長製造装置の最適化条件の探索

    堀内鷹之, Wang Lei, 山本卓也, 宇治原徹, 岡野泰則

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ホテルコンコルド浜松   Country:Japan  

  188. 機械学習による結晶成長条件の予測を用いたSiC溶液成長

    林宏益, 村井良多, 朱燦, 村山健太, 角岡洋介, 畑佐豪記, 原田俊太, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ホテルコンコルド浜松   Country:Japan  

  189. 気相法AlNウィスカー成長における形状変化メカニズムの解明

    齊藤廣志, 竹内幸久, 原田俊太, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ホテルコンコルド浜松   Country:Japan  

  190. SiC溶液成長におけるプロセス・インフォマティクス

    宇治原徹,角岡洋介,畑佐豪記,村山健太,村井良多,朱燦,原田俊太,田川美穂

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ホテルコンコルド浜松   Country:Japan  

  191. 4H-SiC溶液成長法二段階成長における異種多形の析出抑制

    村山健太, 原田俊太, 藤栄文博, 劉欣博, 村井良多, 朱燦, 花田賢志, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ホテルコンコルド浜松   Country:Japan  

  192. SiC溶液成長過程における転位伝播方向制御による高品質化

    原田俊太, 村山健太, 村井良多, 朱燦, 田川美穂, 宇治原徹

    第46回結晶成長国内会議(JCCG-46) 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:ホテルコンコルド浜松   Country:Japan  

  193. 溶液法 SiC 基板を用いて作製した MOS キャパシタの評価

    古庄智明, 川畑直之, 古橋壮之, 渡辺友勝, 渡邊寛, 山川聡, 村山健太, 原田俊太, 宇治原徹

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  194. 貫通らせん転位が極めて少ない 4H-SiC の溶液成長における多形安定化手法

    村山健太, 原田俊太, 藤栄文博, 劉欣博, 村井良多, 朱燦, 花田賢志, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  195. 溶液成長における溶液状態の高速予測と 網羅的探索により最適化した条件での結晶成長

    村井良多, 村山健太, 原田俊太, 畑佐豪記, 角岡洋介, 林宏益, 朱燦, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  196. SiC 溶液成長法における溶媒中の Cr 組成に対する 成長ポリタイプの面内分布及び相対存在割合の評価

    鈴木皓己, 高橋大, 土本直道, 玄光龍, 太子敏則, 村山健太, 原田俊太, 宇治原徹

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  197. ラマン分光法による GaN 単結晶における貫通転位の刃状成分の解析

    小久保信彦, 角岡洋介, 藤榮文博, 大原淳士, 原一都, 恩田正一, 山田永, 清水三聡, 原田俊太, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  198. X 線トポグラフィーその場観察による 4H-SiC 積層欠陥挙動の窒素濃度依存性評価

    藤榮文博, 原田俊太, 周防裕政, 加藤智久, 田川美穂, 宇治原徹

    先進パワー半導体分科会 第4回講演会 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋国際会議場   Country:Japan  

  199. Smooth Li Electrodeposition on Single Crystal Cu Current Collectors International conference

    K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara

    The Electrochemical Society (232nd ECS Meeting) 

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    Event date: 2017.10

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  200. Trial of Informatics in Crystal Growth -SiC Solution Growth- International conference

    T. Ujihara

    2017 International Conference on Solid State Devices and Materials (ssdm 2017) 

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    Event date: 2017.9

    Language:English   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Country:Japan  

  201. High-Quality SiC Solution Growth Using Dislocation Conversion on C Face International conference

    S. Xiao, S. Harada, X. Liu, K. Murayama, R. Murai, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  202. Two-Step Sic Solution Growth with Extremely Low-Dislocation-Density 4h-SiC Crystal for Suppression of Polytype Transformation International conference

    K. Murayama, S. Harada, F. Fujie, X. Liu, R. Murai, C. Zhu, K. Hanada, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) 

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    Event date: 2017.9

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  203. High-Speed Prediction Model for Supersaturation and Flow Distribution by CFD Simulation and Machine Learning in SiC Solution Growth International conference

    Y. Tsunooka, N. Kokubo, G. Hatasa, S. Harada, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) 

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    Event date: 2017.9

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  204. Real-Time Visualization System for Temperature and Fluid Flow Distributions in SiC Solution Growth Using Prediction Model Constructed by Machine Learning International conference

    G. Hatasa, Y. Tsunooka, S. Lee, K. Murayama, R. Murai, S. Harada, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) 

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    Event date: 2017.9

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  205. Direct Observation of Stacking Faults Expansion in 4H-SiC at High Temperatures by In Situ X-Ray Topography International conference

    F. Fujie, S. Harada, K. Murayama, K. Hanada, P. Chen, T. Kato, M. Tagawa, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) 

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    Event date: 2017.9

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  206. Evaluation of 2-Inch Wafer by Solution Growth Method Using Synchrotron X-Ray Topography International conference

    K. Seki, K. Kusunoki, Y. Kishida, H. Kaido, K. Moriguchi, M. Kado, H. Daikoku, T. Shirai, M. Akita, A. Seki, H. Saito, S. Harada, T. Ujihara

    The International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) 

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    Event date: 2017.9

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  207. 単結晶Cu集電体を用いた金属Li負極の不均一析出抑制

    石川 晃平, 原田 俊太, 田川 美穂, 宇治原 徹

    日本金属学会 2017年秋期講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:北海道大学   Country:Japan  

  208. SiCにおける積層欠陥拡張・収縮挙動の高温その場観察

    藤榮 文博, 原田 俊太, 花田 賢志, 村山 健太, 田川 美穂, 加藤 智久, 宇治原 徹

    日本金属学会 2017年秋期講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  209. 溶液成長SiC基板上に作製した酸化膜の評価

    古庄 智明, 川畑 直之, 古橋 壮之, 渡辺 友勝, 渡邊 寛, 山川 聡, 村山 健太, 原田 俊太, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:福岡国際会議場   Country:Japan  

  210. DNA被覆ナノ粒子によるDDAB脂質二重膜の指組みゲル相形成の促進

    磯貝 卓巳, 鷲見 隼人, 手老 龍吾, 原田 俊太, 宇治原 徹, 田川 美

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  211. Investigation of high-temperature annealing process ofsputtered AlN films

    S. Xiao, Y. Liu, R. Suzuki, H. Miyake, K. Hiramatsu, S. Harada,T. Ujihara

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  212. 機械学習を用いたSiC結晶成長実験条件の最適化

    村井 良多, 畑佐 豪記, 角岡 洋介, 林 宏益, 村山 健太, 朱 燦, 原田 俊太, 田川 美穂, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  213. SiC溶液法C面成長における貫通らせん転位の低減

    劉 欣博, 原田 俊太, 村山 健太, 村井 良多, 肖 世玉, 田川 美穂, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  214. 4H-SiC 溶液成長における積層欠陥との相互作用により生じる貫通らせん転位の変換挙動

    加渡 幹尚, 原田 俊太, 関 和明, 大黒 寛典, 楠 一彦, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  215. X線その場観察によりメニスカス高さ制御したSiC溶液成長

    酒井 武信, 秋田 光俊, 加度 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  216. Li挿入によるWO3薄膜の熱伝導率の変化

    小林 竜大, 中村 彩乃, 原田 俊太, 田川 美穂, 宇治原 徹

    2017年第78回応用物理学会秋季学術講演会 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  217. SiC溶液成長における機械学習を用いた閉鎖空間の溶液温度・流速分布の予

    畑佐 豪記, 角岡 洋介, 村山 健太, 村井 良太, 原田 俊太, 田川 美穂, 宇治原 徹

    第40回結晶成長討論会 

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    Event date: 2017.8 - 2017.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:浜名湖ロイヤルホテル   Country:Japan  

  218. Controlling thermal conductivity in tungsten trioxide by ion-intercalation International conference

    T. Ujihara

    The 9th US-Japan Joint Seminar on Nanoscale Transport Phenomena 

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    Event date: 2017.7

    Language:English  

    Country:Japan  

  219. Hydrogen-Induced Thermal Conductivity Change across Metal-Insulator Transition in Amorphous WO3 Film International conference

    A. Nakamura, S. Harada, M. Tagawa, T. Ujihara

    2017 MRS Spring Meeting 

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    Event date: 2017.4

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  220. Numerical simulation of the transport phenomena occurring during the growth of SiC crystals by the RF-heating TSSG method International conference

    T. Yamamoto, J. Sakamoto, Y. Okano, T. Ujihara, and S. Dost

    ACTS-P00078, Asian Conference on Thermal Sciences 2017 (ACTS2017) 

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    Event date: 2017.3

    Language:English   Presentation type:Poster presentation  

    Country:Korea, Republic of  

  221. 誘導加熱TSSG法によるSiC成長時の融液内対流現象に関する数値解析

    山本 卓也, 岡野 泰則, 宇治原 徹

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  222. DNA修飾ナノ粒子超格子を前駆体としたウルフ多面体型コロイド結晶の形成

    鷲見 隼人, 磯貝 卓巳, 吉田 直矢, 原田 俊太, 宇治原 徹, 田川 美穂

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  223. SiC溶液成長における最適条件高速探索手法の提案

    角岡 洋介, 小久保 信彦, 原田 俊太, 田川 美穂,宇治原 徹

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:パシフィコ横浜   Country:Japan  

  224. 水素挿入・脱離によるWO3薄膜の熱伝導率制御

    中村 彩乃, 小林 竜太, 原田 俊太, 田川 美穂, 宇治原 徹

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  225. 酸化タングステンの酸化還元による可逆的熱伝導率制御

    原田 俊太, 弓削 勇輔, 田川 美穂, 宇治原徹

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  226. 4H-SiC中1SSF・PD起因フォトルミネッセンス減衰時間の温度依存性

    片平 真哉, 市川 義人, 原田 俊太, 木本 恒暢, 加藤 正史

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  227. X線透過法により溶液形状制御したSiC溶液成長

    酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  228. 後方反射X線トポグラフィによる4H-SiC積層欠陥拡張挙動のその場観察

    藤榮 文博, 原田 俊太, 村山 健太, 花田 賢志, 陳鵬磊, 加藤 智久, 田川 美穂, 宇治原 徹

    2017年第64回応用物理学会春季学術講演会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  229. TSSG法によるSiC結晶成長の数値シミュレーション

    阪本純基、山本卓也、岡野泰則、宇治原徹

    第19回化学工学会学生発表会 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学 豊中キャンパス   Country:Japan  

  230. 半導体伝導帯構造を明らかにする可視光電子光電子分光法の提案

    宇治原 徹, 市橋 史朗, 董 キン宇, 井上 明人, 川口 昂彦, 桑原 真人, 伊藤 孝寛, 原田 俊太, 田川 美穂

    2016年真空・表面科学合同講演会 第 36 回表面科学学術講演会 第 57 回真空に関する連合講演会 

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    Event date: 2016.11 - 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  231. 金属 Li 負極における Cu 集電体の結晶方位と析出形状の関係

    石川 晃平, 伊藤 靖仁, 原田 俊太, 田川 美穂, 宇治原 徹

    第57回電池討論会 

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    Event date: 2016.11 - 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:幕張メッセ国際会議場   Country:Japan  

  232. High Quality SiC Single Crystal Grown by Soltion Growth Method International conference

    T. Ujihara

    2016 Fall Meeting of the Korean Ceramics Society 

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    Event date: 2016.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:soul Korea   Country:Korea, Republic of  

  233. Optically induced crystallization of NaClO3 metastable phase on plasmonic gold nanostructures immersed in unsaturated mother solution

    H. Niinomi, T. Sugiyama, M. Tagawa, T. Ujihara, Y. Mori, S. Harada, K. Murayama, K. Miyamoto, T. Omatsu

    Institute for Global Prominent Research Kickoff Symposium 

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    Event date: 2016.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  234. X線透過法による SiC 溶液成長の溶液流れと溶液形状のその場観察

    酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    先進パワー半導体分科会 第3回講演会 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:つくば国際会議場   Country:Japan  

  235. 窒素添加した 4H-SiC における積層欠陥拡張・収縮挙動の高温その場観察

    藤榮 文博, 原田 俊太, 村山 健太, 花田 賢志, 陳 鵬磊, 田川 美穂, 加藤 智久, 宇治原 徹

    先進パワー半導体分科会 第3回講演会 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:つくば国際会議場   Country:Japan  

  236. 透過電子顕微鏡による窒素添加 SiC 積層欠陥の高温その場観察

    陳 鵬磊, 原田 俊太, 荒井 重勇, 藤榮 文博, 肖 世玉, 加藤 智久, 田川 美穂, 宇治原 徹

    先進パワー半導体分科会 第3回講演会 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:つくば国際会議場   Country:Japan  

  237. SiC 溶液成長においてルツボ口径が多結晶析出に及ぼす影響

    岡島 鎮記, 村井 良多, 村山 健太, 原田 俊太, 田川 美穂, 宇治原 徹

    先進パワー半導体分科会 第3回講演会 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:つくば国際会議場   Country:Japan  

  238. 溶液成長法二段階成長による SiC 結晶内の欠陥密度の低減

    村山 健太, 堀 司紗, 原田 俊太, 田川 美穂, 宇治原 徹

    先進パワー半導体分科会 第3回講演会 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:つくば国際会議場   Country:Japan  

  239. Crystallization of NaClO3 metastable phase from unsaturated mother solution achieved by excitation of plasmonic Au nanoarray

    H. Niinomi, T. Sugiyama, M. Tagawa, T. Ujihara, Y. Mori, S. Harada, K. Murayama, K. Miyamoto, T. Omatsu

    Optics & Photonics Japan 2016 

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    Event date: 2016.10 - 2016.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  240. Evaluation of conduction mini-bands in semiconductor superlattice by visible-light photoelectron spectroscopy International conference

    T. Ujihara

    13th International Conference on Atomically Controlled Surfaces 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Rome Italy   Country:Italy  

  241. Trial of Process Informatics in SiC Solution Growth International conference

    T. Ujihara, S. Harada, Y. Tsunooka, N. Kokubo, K. Murayama, R. Murai, M. Tagawa

    The 3rd International Conference on Universal Village (UV 2016) 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  242. Effect of Crystal Orientation of Cu Current Collector on Morphology of Li Electrodeposition International conference

    K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara

    Nucleation and Growth Research Conference (NGRC 2016) 

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    Event date: 2016.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  243. Formation Mechanism of AlN Whiskers by Reacting N2 Gas and Al Vapor International conference

    M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara

    Nucleation and Growth Research Conference (NGRC 2016) 

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    Event date: 2016.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  244. Reduction of all types of dislocation in 4H-SiC crystal by two-step solution growth International conference

    K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara

    The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM) 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Greece  

  245. In-situ observation during solution growth of SiC by X-ray transmission method International conference

    T. Sakai, M. Kado, H. Daikoku, S. Harada, T. Ujihara

    The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM) 

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    Event date: 2016.9

    Language:English   Presentation type:Poster presentation  

    Country:Greece  

  246. Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth International conference

    T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara

    The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM) 

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    Event date: 2016.9

    Language:English   Presentation type:Poster presentation  

    Country:Greece  

  247. Solvent design for high-purity SiC solution growth International conference

    S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara

    The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM) 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Greece  

  248. 半導体光陰極を用いた次世代透過電子顕微鏡の開発

    桑原 真人, 青木 幸太, 鈴木 潤士, 宇治原 徹, 齋藤 晃, 田中 信夫

    2016年第77回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ   Country:Japan  

  249. n 型 4H-SiC 中 SSF 起因フォトルミネッセンスの時間分解測定

    加藤 正史, 片平 真哉, 市川 義人, 市村 正也, 原田 俊太

    2016年第82回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ   Country:Japan  

  250. 機械学習を用いた溶液成長における過飽和度分布の予測

    角岡 洋介, 小久保 信彦, 原田 俊太, 田川 美穂, 宇治原 徹

    2016年第81回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ   Country:Japan  

  251. X 線透過法による溶液法 SiC 結晶成長の溶液表面形状の経時変化の観察

    酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    2016年第80回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ   Country:Japan  

  252. X 線透過法による溶液法 SiC 結晶成長のその場観察

    酒井 武信, 加渡 幹尚, 大黒 寛典, 原田 俊太, 宇治原 徹

    2016年第79回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ   Country:Japan  

  253. AlN 溶液成長における機械学習を用いた溶液流動の高効率予測

    小久保 信彦, 角岡 洋介, 原田 俊太, 田川 美穂, 宇治原 徹

    2016年第78回応用物理学会秋季学術講演会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ   Country:Japan  

  254. TSSG 法による SiC 結晶成長炉内移動現象に関する数値シミュレーション

    山本 卓也、岡野 泰則、宇治原 徹

    化学工学第48回秋季大会 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:徳島大学 常三島キャンパス   Country:Japan  

  255. Controlling two-dimensional structuer of DNA-linked Au nanoparticle lattices on supported lipid bilayer International conference

    T. Isogai, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa

    The 22nd International Conference on DNA Computing and Molecular Programming (DNA22) 

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    Event date: 2016.9

    Language:English   Presentation type:Poster presentation  

    Country:Germany  

  256. Control of Macrostep Structure for High-Quality SiC Grown by Liquid Phase Epitaxy International conference

    T. Ujihara, C. Zhu, K. Murayama, S. Harada, M.Tagawa

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  257. Enantioselective bias on circularly polarized laser-induced chiral crystallization from NaClO3 solution with plasmonic Ag nanoparticles International conference

    H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, T. Omatsu, T. Ujihara, Y. Mori

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  258. The realization of high-quality 4H-SiC C-face grown crystals by controlling the macrosteps formation during solution growth International conference

    S. Y. Xiao, S. Harada, P. L. Chen, K. Murayama, T.Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  259. Effect of Crystal Shape on Solution Flow and Surface Morphology in Solution Growth of SiC International conference

    D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S.Harada, M. Tagawa, T. Sakai, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  260. Numerical Investigation of Transport Phenomenaduring Crystal Growth of SiC by the Induction Heating TSSG Method International conference

    N. Adkar, T. Yamamoto, Y. Okano, T. Ujihara, S. Dost

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  261. Two-step growth of SiC solution growth for reduction of dislocations International conference

    K. Murayama, T. Hori, S. Harada, S. Xiao, M.Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  262. Threading Screw Dislocation Conversion by Macrosteps during SiC Solution Growth for High-quality Crystals International conference

    S. Harada, K. Murayama, S. Xiao, F. Fujie, T.Sakai, M. Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  263. Morphology of AlN whiskers grown by reacting N2 gas and Al vapor International conference

    M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  264. Prediction of solution flow combined with computational fluid dynamics simulation and sparse modeling International conference

    N. Kokubo, Y. Tsunooka, S. Harada, M. Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  265. Crystal orientation dependence of precipitate structure of electrodeposited Li metal on Cu current collectors International conference

    K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  266. Phase transition process in DDAB supported lipid bilayer International conference

    T. Isogai, S. Nakada, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa

    the 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  267. Spectroscopy of electrons emitting from conduction mini-band of semiconductor superlattice through negative-electron-affinity surface International conference

    T. Ujihara

    the 39th International conference on Vacuum Ultraviolet and X-ray Physics (VUVX2016) 

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    Event date: 2016.7

    Language:English   Presentation type:Poster presentation  

    Country:Switzerland  

  268. 塩素酸ナトリウム水溶液中の銀ナノ粒子円偏光光学捕捉により誘起されるキラル結晶化におけるキラリティの偏り

    新家 寛正, 杉山 輝樹, 田川 美穂, 村山 健太, 原田 俊太, 宇治原 徹

    日本地球惑星科学連合2016年大会 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:幕張メッセ   Country:Japan  

  269. Chiral bias on circularly polarized laser-induced chiral crystallization from NaClO3 solution containing plasmonic Ag nanoparticles International conference

    H. Niinomi, T. Sugiyama, M. Tagawa, K. Murayama, S. Harada, K. Miyamoto, T. Omatsu, T. Ujihara

    Optical manipulation and its satellite topics (OMC'16) 

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    Event date: 2016.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  270. 溶液法による高品質 SiC 結晶成長とその必要性

    松本 利希,川口 昂彦,畑野 敬史,原田 俊太,飯田 和昌,宇治原 徹,生田 博志

    第27回シリサイド系半導体研究会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:小山台会館   Country:Japan  

  271. 強磁場スパッタ法によるマンガン窒化物薄膜の作製

    松本 利希,川口 昂彦,畑野 敬史,原田 俊太,飯田 和昌,宇治原 徹,生田 博志

    2016年第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  272. 超格子構造中のDNA被覆金ナノ粒子の融合に向けた粒子間距離収縮とナノ粒子融合

    鷲見 隼人,磯貝 卓巳,中田 咲子,吉田 直矢,原田 俊太,宇治原 徹,田川 美穂

    2016年第64回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  273. DDAB平面脂質二重膜の相転移過程の直接観察

    磯貝 卓巳,中田 咲子,赤田 英里,吉田 直矢,鷲見 隼人,手老 龍吾,原田 俊太,宇治原 徹,田川 美穂

    2016年第63回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  274. 溶液法による4H-SiCバルク結晶成長と結晶品質評価

    楠 一彦,関 和明,岸田 豊,海藤 宏志,森口 晃治,岡田 信宏,大黒 寛典,加渡 幹尚,土井 雅喜,旦野 克典,関 章憲,佐藤 和明,別所 毅,原田 俊太,宇治原 徹

    2016年第67回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  275. 可視光励起光電子分光法を用いたGaPにおけるキャリア散乱の温度依存性評価

    市橋 史朗,川口 昂彦,董 キン宇,井上 明人,桑原 真人,伊藤 孝寛,原田 俊太,田川 美穂,宇治原 徹

    2016年第66回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  276. SiC溶液法における溶媒への金属添加による炭素溶解度変化の熱力学計算

    畑佐 豪記,原田 俊太,田川 美穂,村山 健太,加藤 智久,宇治原 徹

    2016年第65回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  277. SiC溶液成長における基底面転位と表面モフォロジーの関係

    堀 司紗,村山 健太,原田 俊太,肖 世玉,田川 美穂,宇治原 徹

    2016年第64回応用物理学会春季学術講演会 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東工大大岡山キャンパス   Country:Japan  

  278. 超高品質SiC溶液成長法の最前線

    原田 俊太,宇治原 徹

    日本結晶成長学会・バルク成長分科会 第98回研究会「機能性単結晶材料の最新動向--パワーデバイスから光・圧電まで--」 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学 西早稲田キャンパス   Country:Japan  

  279. インフォマティクスがもたらす結晶成長プロセスの革新 Invited

    宇治原 徹

    日本金属学会第166回公演大会2017春季第64回応用物理学関連連合講演会・結晶工学分科会シンポジウム 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学 大岡山キャンパス   Country:Japan  

  280. Direct observation of electrons transported in second conduction mini-band of a semiconductor superlattice by visible-light photoemission spectroscopy International conference

    F. Ichihashi, K. Nishitani, X. Dong, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, M. Tagawa, T. Ujihara

    SPIE Photonics West 2016 

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    Event date: 2016.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  281. 「成長過程における転位変換現象を利用した高品質 SiC 溶液成長」

    宇治原徹

    材料の微細組織と機能性第133委員会 第230回研究会 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京理科大学 森戸記念館   Country:Japan  

  282. Thermal conductivity changes in WO3 films caused by hydrogen intercalation/deintercalation International conference

    A. Nakamura, K. Aoyagi, S. Harada, M. Tagawa, T. Ujihara

    40th International Conference & Exposition on Advanced Ceramics & Composites(ICACC16) 

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    Event date: 2016.1

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  283. “転位変換現象を利用した超高品質 SiC 結晶の溶液成長”

    宇治原徹

    2015年第35回表面科学学術講演会/第56回真空に関する連合講演会 真空・表面科学合同講演会 合同シンポジウム「パワーデバイスにおけるワイドキャップ半導体の最前線」 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:つくば国際会議場   Country:Japan  

  284. 「やるかやらないか~リーダーシップとは何か?~」

    宇治原徹

    名古屋大学リーディング大学院プログラム Joint Symposium 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Oral presentation (keynote)  

    Venue:名古屋大学東山キャンパス、ES総合館ESホール   Country:Japan  

  285. "Introduction of SiC Solution Growth‐in comparison with other growth methods" International conference

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Giardini Naxos, Italy   Country:Italy  

  286. “可視光励起光電子分光によるGaP中伝導電子分布の温度変化の観測”

    川口昂彦, 市橋史朗, 董キン宇, 桒原真人, 伊藤孝寛, 宇治原徹

    日本物理学会 2015 年秋季大会プログラム 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪府, 関西大学千里山キャンパス   Country:Japan  

  287. “可視光励起光電子分光法を用いたGaPにおける伝導電子エネルギー分布の温度依存性評価”

    董キン宇, 市橋史朗, 川口昂彦, 桒原真人, 伊藤孝寛, 宇治原徹

    2015年 第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛知県, 名古屋国際会議場   Country:Japan  

  288. “第6次産業革命とは・・「人と技術の融合」の必要性(趣旨説明)”

    宇治原徹

    2015年 第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛知県, 名古屋国際会議場   Country:Japan  

  289. “NEA表面の利用により実現した可視光励起光電子分光法”

    川口昂彦, 市橋史朗, 董キン宇, 桒原 真人, 伊藤 孝寛, 宇治原 徹

    2015年 第76回応用物理学会秋季学術講演会 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛知県, 名古屋国際会議場   Country:Japan  

  290. “SiC溶液成長過程における欠陥変換メカニズムの解明と超高品質結晶の実現”

    宇治原徹

    第71回マテリアルズ・テーラリング研究会 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:長野県, (公財)加藤山崎教育基金 軽井沢研修所   Country:Japan  

  291. "Car Materials and Processing" International conference

    T.Ujihara

    Nagoya University, RWDC Summer School Program in Istanbul Technical University 

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    Event date: 2015.6 - 2015.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Turkey  

  292. "Development of Visible-Light Photoemission Spectroscopy for the Evaluation of Conduction Bands in Semiconductors" International conference

    BIT's 4th Annual World Congress of Advanced Materials-2015 (WCAM-2015) 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:China  

  293. "Synthesis of polycrystalline AlN with high thickness by an efficient method"

    Pradip Ghosh, Kohei Mizuno, Makoto Hayashi, Yukihisa Takeuchi, Yuichi Aoki, Susumu Sobue, Yasuo Kitou, Jun Hasegawa, Makoto Kobashi, Toru Ujihara

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    Event date: 2015.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  294. "4H-SiC溶液成長におけるSiCrAl溶媒へのSn微量添加効果"

    小松 直佳、三谷 武志、高橋 徹夫、加藤 智久、宇治原 徹、松本 祐司、蔵重 和央、奥村 元

    2015年 第62回応用物理学会春季学術講演会 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学 湘南キャンパス、神奈川県   Country:Japan  

  295. "High quality SiC crystal grown by solution method" International conference

    T. Ujihara

    International Conference on Chemical, Materials and Bio-Sciences for Sustainable Development(ICCMBSD-2015) 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:India  

  296. "結晶配向した多結晶タングステン上における金属リチウム負極の析出形状"

    石川 晃平

    日本金属学会・日本鉄鋼協会東海支部 第24回学生による材料フォーラム 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋工業大学, 愛知県   Country:Japan  

  297. "脂質二重膜状におけるDNA被覆金ナノ粒子の拡散現象"

    中田 咲子

    日本金属学会・日本鉄鋼協会東海支部 第24回学生による材料フォーラム 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋工業大学, 愛知県   Country:Japan  

  298. "Al-N 同時添加での4H-SiC溶液成長における成長表面安定性と伝導特性 4H-SiC growth from Si-Cr-C solution under Al and N co-doping conditions"

    三谷武志、小松直佳、高橋徹夫、加藤智久、宇治原徹、松本祐司、蔵重和央、奥村元

    先進パワー半導体分科会 第1回講演会 1st Meeting on Advanced Power Semiconductor 「未来を創る先進パワーエレクトロニクスと低炭素社会」 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:ウインクあいち、愛知県   Country:Japan  

  299. "結晶表面の三次元過飽和度および成長速度分布の測定と対流が結晶表面形態に与える影響"

    村山健太,塚本勝男,横山悦郎,宇治原徹

    第44回結晶成長国内会議(NCCG-44) 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:学習院創立百周年記念会館, 東京都   Country:Japan  

  300. "4H-SiC溶液成長におけるAl-N同時添加が成長表面及び伝導性へ及ぼす影響"

    三谷武志,小松直佳,高橋徹夫,加藤智久,宇治原徹,松本祐司,蔵重和央,奥村元

    第44回結晶成長国内会議(NCCG-44) 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:学習院創立百周年記念会館, 東京都   Country:Japan  

  301. "4H-SiC溶液成長における各種添加物の成長表面への影響"

    小松直佳,三谷武志,高橋徹夫,加藤智久,蔵重和央,松本祐司,宇治原徹,奥村元

    第44回結晶成長国内会議(NCCG-44) 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:学習院創立百周年記念会館, 東京都   Country:Japan  

  302. "Two-dimensional assembly of Au nanoparticles through DNA hybridization on supported lipid bilayer" International conference

    Takumi Isogai, Eri Akada, Sakiko Nakada, Ryugo Tero, Shunta Harada, Toru Ujihara and Miho Tagawa

    20th International Conference on DNA Computing and Molecular Programming(DNA20) 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  303. "Heavily Al doped 4H-SiC growth by the top-seeded solution growth technique using Si-Al-Cu melt as a solvent" International conference

    Kazuhiko KUSUNOKI, Kazuaki SEKI, Kazuhito KAMEI, Yutaka KISHIDA, Koji MORIGUCHI, Hiroshi KAIDOH, Shunta HARADA, Toru UJIHARA

    10th European Conference on Silicon Carbide and Related Materials(ECSCRM 2014) 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:France  

  304. "Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC" International conference

    Kuniharu FUJII, Koichi TAKEI, Masahiro AOSHIMA, Nachimuthu SENGUTTUVAN, Masahiko HIRATANI, Toru UJIHARA, Yuji MATSUMOTO, Tomohisa KATO, Kazuhisa KURASHIGE, Hajime OKUMURA

    10th European Conference on Silicon Carbide and Related Materials(ECSCRM 2014) 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  305. "Effect of forced convection by crucible design in solution growth of SiC single crystal" International conference

    Kazuhisa KURASHIGE, Masahiro AOSHIMA, Kouichi TAKEI, Kuniharu FUJII, Masahiko HIRATANI, Nachimuthu SENGUTTUVAN, Tomohisa KATO, Toru UJIHARA, Yuji MATSUMOTO, Hajime OKUMURA

    10th European Conference on Silicon Carbide and Related Materials(ECSCRM 2014) 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:France  

  306. "Threading screw dislocations conversion behavior on C face with different surface morphology during 4H-SiC solution growth" International conference

    Shiyu XIAO, Natsumi HARA, Shunta HARADA, Takenobu SAKAI, Toru UJIHARA

    10th European Conference on Silicon Carbide and Related Materials(ECSCRM 2014) 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:France  

  307. "4H-SiC growth from Si-Cr-C solution under Al and N co-doping conditions" International conference

    Takeshi MITANI, Naoyoshi KOMATSU, Tetsuo TAKAHASHI, Tomohisa KATO, Toru UJIHARA, Yuji MATSUMOTO, Kazuhisa KURASHIGE, Hajime OKUMURA

    10th European Conference on Silicon Carbide and Related Materials(ECSCRM 2014) 

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    Event date: 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:France  

    TU1-OR-04

  308. "Dislocation conversion during SiC solution growth for high-quality crystal" International conference

    Shunta HARADA, Yuji YAMAMOTO, Shiyu XIAO, Natsumi HARA, Daiki KOIKE, Takuya MUTOH, Miho TAGAWA, Takenobu SAKAI, Toru UJIHARA

    10th European Conference on Silicon Carbide and Related Materials(ECSCRM 2014) 

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    Event date: 2014.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:France  

  309. "Change in surface morphology by the addition of impurity elements in 4H-SiC solution growth with Si solvent" International conference

    Naoyoshi KOMATSU, Takeshi MITANI, Tetsuo TAKAHASHI, Tomohisa KATO, Kazuhisa KURASHIGE, Yuji MATSUMOTO, Toru UJIHARA, Hajime OKUMURA

    10th European Conference on Silicon Carbide and Related Materials(ECSCRM 2014) 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:France  

  310. "Structure of basal plane defects formed by the conversion of threading screw dislocation during solution growth of SiC" International conference

    S. Harada, S.Y. Xiao, M. Tagawa, Y. Yamamoto, S. Arai, N. Tanaka and T. Ujihara

    SSDM2014 

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    Event date: 2014.9

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  311. 「溶液からの窒化アルミニウム材料の作製」

    宇治原徹

    窒化アルミニウム・窒化ケイ素の高性能・低コスト化に向けた生成プロセスの開発~放熱基板等の高性能・低コスト化に向けたAlN・SiNの生成プロセス~ 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京・品川区大井町 きゅりあん   Country:Japan  

  312. "Correlation between Surface Morphology and Threading Dislocation Conversion in Solution Growth of SiC" International conference

    Shunta Harada Shiyu Xiao, Natsumi Hara, Daiki Koike, Takuya Mutoh, Miho Tagawa and Toru Ujihara

    IUMRS-ICA2014 

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    Event date: 2014.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  313. "Characterization of Newly Generated Defects during Solution Growth of 4H-SiC" International conference

    Shiyu Xiao, Shunta Harada, Natsumi Hara, Miho Tagawa and Toru Ujihara

    IUMRS-ICA2014 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  314. "Defect evolution in high-qualit 4H-SiC grown by solution method" International conference

    S. Harada, M. Tagawa, T. Ujihara

    IUCr 2014 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Canada  

  315. "DNA-mediated Nanoparticle Crystallization" International conference

    Miho Tagawa, Oleg Gang, Takumi Isogai, Sakiko Nakada, Eri Akada, Shunta Harada, Toru Ujihara

    The International Symposium on Material Architectonics for Sustainable Action (MASA 2014) 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  316. "DNAと基板担持脂質二重膜とを用いたナノ粒子の結晶化"

    田川美穂

    応用物理学会 有機分子・バイオエレクトロニクス分科会 研究会「有機分子・バイオエレクトロニクスが拓く新たな世界」 

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    Event date: 2014.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:キャンパスプラザ京都 会議室、京都府   Country:Japan  

  317. "Direct Measurement of Conduction Miniband Structure in Superlattice by Visible-Light Photoemission Spectroscopy" International conference

    Fumiaki Ichihashi, Daiki Shimura, Kenji Nishitani, Makoto Kuwahara, Takahiro Ito, Shunta Harada, Hiroyasu Katsuno, Miho Tagawa, Toru Ujihara

    the 40th IEEE Photovoltaic Specialists Conference(The PVSC-40) 

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    Event date: 2014.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  318. NaClO3 溶液成長におけるアキラル-キラル多形転移を介したキラリティの発生と増幅

    新家寛正, 原田俊太, 宇治原徹, 三浦均, 木村勇気, 上羽牧夫, 塚本勝男

    日本地球惑星科学連合2014年大会 

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    Event date: 2014.4 - 2014.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜、神奈川県   Country:Japan  

  319. 可視光励起光電子分光法による半導体中の伝導電子の直接観察

    市橋史朗,志村大樹,西谷健治, 原真,伊藤孝寛,原田俊太,田川美穂,宇治原徹

    日本物理学会 第69回年次大会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学 湘南キャンパス、神奈川県   Country:Japan  

  320. 半導体光陰極を用いたTEMの空間コヒーレンス測定

    桑原真人,南保由人,鮫島健介,楠聡一郎,齋藤晃,宇治原徹,浅野秀文,竹田美和,田中信夫

    日本物理学会 第69回年次大会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学 湘南キャンパス、神奈川県   Country:Japan  

  321. SiC溶液法C面成長におけるTSD変換

    肖世玉,原奈津美,原田俊太,宇治原徹

    2014年 第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス、神奈川県   Country:Japan  

  322. 可視光励起光電子分光法による半導体超格子ミニバンド構造の有効質量評価

    西谷健治,志村大樹,市橋史朗,桒原真人,伊藤孝寛,原田俊太,田川美穂,宇治原徹

    2014年 第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス、神奈川県   Country:Japan  

  323. 4H-SiC溶液成長法における凸形状成長による貫通らせん転位の変換挙動

    古池大輝,梅崎智典,堀尾篤史,原田俊太,田川美穂,宇治原徹

    2014年 第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス、神奈川県   Country:Japan  

  324. SiC溶液成長における貫通らせん転位変換の弾性エネルギーによる考察

    原田俊太,肖世玉,原奈都美,勝野弘康,田川美穂,宇治原徹

    2014年 第61回応用物理学会春季学術講演会 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス、神奈川県   Country:Japan  

  325. Ultra-high quality SiC crystal grown by solution method International conference

    T.Ujihara

    ICSEM 2014 (International Conference on Science and Engineering of Materials 

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    Event date: 2014.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Sharda University, Greater Noida, India   Country:India  

  326. "Structure of basal plane defects formed by threading screw dislocation conversion during high quality SiC solution growth" International conference

    S.Harada, R.Kunimatsu, Xiao Shiyu, Y.Yamamoto, M.Tagawa, Y.Yamamoto, S.Arai, N.Tanaka, T.Ujihara

    ISETS '13 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  327. "Possibility of time-resolved measurement in spin-polarized TEM" International conference

    M.Kuwahara, Y.Nambo, S.Kusunoki, K.Sameshima, K.Saitoh, T.Ujihara, H.Asano, Y.Takeda, N.Tanaka

    ISETS '13 

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    Event date: 2013.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  328. "Observation of basal plane dislocations generated during solution growth in 4H-silicon carbide" International conference

    S.Y.Xiao, S.Harada, T.Ujihara

    ISETS '13 

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    Event date: 2013.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  329. "Two-dimensional crystallization of DNA-functionalized Au nanoparticles using lipid diffusion" International conference

    T.Isogai, E.Akada, A.Piednoir, Y.Akahoshi, R.Tero, S.Harada, T.Ujihara, M.Tagawa

    ISETS '13 

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    Event date: 2013.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  330. "Direct Observation of Conduction Band Structure and Conduction Electron Distribution in Semiconductor for Intermediate-band Solar Cells" International conference

    F.Ichihashi, D.Shimura, K.Nishitani, M.Kuwahara, S.Harada, T.Ito, M.Tagawa, T.Ujihara

    ISETS '13 

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    Event date: 2013.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

    P-7-17(1325)

  331. "Aluminum Nitride Whiskers with High Aspect Ratio Grown from Multi-Component Melt" International conference

    M.Y.Chen, H.Matsubara, K.Mizuno, M.Nagaya, Y.Takeuchi, S.Harada, T.Ujihara, Y.Aoki, K.Kohara, T.Kano

    ISETS '13 

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    Event date: 2013.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  332. "Evaluation of Mini-Bands Formed in Superlattice Structure for Intermediate-Band Solar Cell" International conference

    D.Shimura, F.Ichihashi, K.Nishitani, S.Harada, T.Ito, M.Kuwahara, M.Matsunami, S.Kimura, M.Tagawa, T.Ujihara

    ISETS '13 

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    Event date: 2013.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  333. "In-situ concentration measurement of zincate ion near zinc anode" International conference

    K.Haginosaki, Y.Ito, T.Mitsuhashi, Y.Sakai, K.Nagata, O.Terashima, T.Ujihara, M.Shikida, H.Hida

    ISETS '13 

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    Event date: 2013.12

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  334. SiC溶液成長過程における基底面転位の形成

    肖 世玉、原田俊太、宇治原徹

    SiC及び関連半導体研究 第22回講演会 

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    Event date: 2013.12

    Language:English   Presentation type:Poster presentation  

    Venue:埼玉会館、埼玉県   Country:Japan  

  335. 溶液成長法による高品質3C-SiC(111)結晶の開発

    関和明、山本翔太、原田俊太、宇治原徹

    SiC及び関連半導体研究 第22回講演会 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:埼玉会館、埼玉県   Country:Japan  

  336. 溶液対流および面内温度分布の表面形状への影響

    藤井邦治、武井康一、長井一郎、N. Senguttuvan、平谷正彦、宇治原徹、松本祐司、加藤智久、蔵重和央、奥村元

    SiC及び関連半導体研究 第22回講演会 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:埼玉会館、埼玉県   Country:Japan  

  337. SiCr溶媒へのAl添加による4H-SiC溶液成長結晶表面のステップ形状変化

    三谷武志、小松直佳、高橋徹夫、加藤智久、宇治原徹、松本祐司、蔵重和央、奥村元

    SiC及び関連半導体研究 第22回講演会 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:埼玉会館、埼玉県   Country:Japan  

  338. 溶液成長させた4H-SiC単結晶における放射光X線トポグラフィーによる欠陥分析

    長井 一郎、青嶌真裕、八木康洋、武井康一、藤井邦治、N. Senguttuvan、蔵重和央、加藤智久、宇治原 徹、松本祐司、奥村元

    SiC及び関連半導体研究 第22回講演会 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:埼玉会館、埼玉県   Country:Japan  

  339. 多元溶媒SiC溶液成長における成長多形と活量比aSi/aCの相関

    堀尾篤史、原田俊太、田川美穂、宇治原徹

    SiC及び関連半導体研究 第22回講演会 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:埼玉会館、埼玉県   Country:Japan  

  340. 4H-SiC溶液成長における成長表面のステップ構造と貫通転位変換挙動の相関

    原田俊太、山本祐治、肖世玉、堀尾篤史、田川美穂、宇治原徹

    SiC及び関連半導体研究 第22回講演会 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:埼玉会館、埼玉県   Country:Japan  

  341. 4H-SiC溶液結晶成長における表面マクロ欠陥を抑制する溶媒組成の探索

    小松直佳、三谷武志、岡村雅之、高橋徹夫、加藤智久、宇治原徹、松本祐司、蔵重和央、奥村元

    SiC及び関連半導体研究 第22回講演会 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:埼玉会館、埼玉県   Country:Japan  

  342. SiC溶液成長における過飽和度制御による凸形状成長

    古池大輝、梅崎智典、堀尾篤史、原田俊太、田川美穂、宇治原徹

    SiC及び関連半導体研究 第22回講演会 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Poster presentation  

    Venue:埼玉会館、埼玉県   Country:Japan  

  343. SiC溶液成長におけるSi溶媒の数値解析と成長結晶の表面形状制御

    古池大輝

    一般社団法人オープンCAE学会 オープンCAEシンポジウム2013 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪産業創造館 、大阪府   Country:Japan  

  344. "SiC溶液成長過程における基底面転位の形成"

    肖世玉,朱燦,原田俊太,宇治原徹

    公益社団法人 応用物理学会 SC東海地区学術講演会2013(JSAP SCTS 2013) 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学 IB電子情報館   Country:Japan  

  345. "脂質二重膜を利用したDNA被覆金ナノ粒子の2次元結晶化"

    磯貝卓巳,赤田英里,Agnes Piednoir,赤星祐樹,手老龍吾,原田俊太,宇治原徹,田川美穂

    公益社団法人 応用物理学会 SC東海地区学術講演会2013(JSAP SCTS 2013) 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学 IB電子情報館   Country:Japan  

  346. "InGaAs/GaAsP超格子における伝導キャリアの直接観察"

    西谷健治,市橋史朗,志村大樹,桒原真人,伊藤孝寛,原田俊太,田川美穂,宇治原徹

    公益社団法人 応用物理学会 SC東海地区学術講演会2013(JSAP SCTS 2013) 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋大学 IB電子情報館   Country:Japan  

  347. "鉄系超伝導体NdFeAsO薄膜上への平坦なCaF2層成長"

    角谷直紀,千原真志,川口昴彦,田渕雅夫,宇治原徹,一瀬中,塚田一郎,生田博志

    公益社団法人 応用物理学会 SC東海地区学術講演会2013(JSAP SCTS 2013) 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学 IB電子情報館   Country:Japan  

  348. "第三世代太陽電池開発に向けた伝導電子エネルギーの測定"

    市橋史朗,志村大樹,西谷健治,桒原真人,伊藤孝寛,原田俊太,田川美穂,宇治原徹

    公益社団法人 応用物理学会 SC東海地区学術講演会2013(JSAP SCTS 2013) 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学 IB電子情報館   Country:Japan  

  349. 4H-SiC溶液成長過程における貫通転位変換挙動と成長表面モフォロジーの相関

    原田俊太,山本祐治,肖世玉,堀尾篤史,田川美穂,宇治原徹

    日本結晶成長学会 第43回結晶成長国内会議(NCCG-43) 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長野市生涯学習センター (TOiGO内) 、長野県   Country:Japan  

  350. NaClO3溶液成長におけるアキラルな準安定相を介したキラル結晶形成過程

    新家寛正,原田俊太,宇治原徹,三浦均,木村勇気,栗林貴弘、上羽牧夫,塚本勝男

    日本結晶成長学会 第43回結晶成長国内会議(NCCG-43) 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長野市生涯学習センター (TOiGO内) 、長野県   Country:Japan  

  351. DNAと脂質二重膜を用いたナノ粒子の2次元結晶化

    磯貝卓巳,赤田英里,Agnes Piednoir,赤星祐樹,手老龍吾,原田俊太,宇治原徹,田川美穂

    日本結晶成長学会 第43回結晶成長国内会議(NCCG-43) 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長野市生涯学習センター (TOiGO内) 、長野県   Country:Japan  

  352. ブラウニアン動力学法を用いた2次元2成分結晶の構造形成シミュレーション

    勝野弘康,田川美穂,宇治原徹

    日本結晶成長学会 第43回結晶成長国内会議(NCCG-43) 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長野市生涯学習センター (TOiGO内) 、長野県   Country:Japan  

  353. NaClO3溶液成長におけるアキラルな準安定相の溶解度測定

    新家寛正,原田俊太,宇治原徹,三浦均,木村勇気,上羽牧夫,塚本勝男

    日本結晶成長学会 第43回結晶成長国内会議(NCCG-43) 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:長野市生涯学習センター (TOiGO内) 、長野県   Country:Japan  

  354. 多元溶媒を用いたAlNウィスカーの成長

    陳鳴宇,松原弘明,水野恒平,永冶仁,竹内幸久,原田俊太,青木祐一,小原公和,加納豊広,宇治原徹

    日本結晶成長学会 第43回結晶成長国内会議(NCCG-43) 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:長野市生涯学習センター (TOiGO内) 、長野県   Country:Japan  

  355. "Observation of Conduction Electrons in Superlattice Structure by Visible Light Photoemission Spectroscopy" International conference

    Kenji Nishitani, Fumiaki Ichihashi, Daiki Shimura, Shunta Harada, Makoto Kuwahara, Miho Tagawa, Takahiro Ito, Toru Ujihara

    the 23rd International Photovoltaic Science and Engineering Conference(PVSEC-23) 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  356. DNAセルフアセンブリによるナノ粒子超構造制御

    田川 美穂, ガング オレグ, 磯貝 卓巳, 赤田 英里, 宇治原 徹

    第 51 回日本生物物理学会年会 シンポジウム 反応場デザインによる生命現象の再構成 -創って知る生物物理- 

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    Event date: 2013.10

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:国立京都国際会館、京都府   Country:Japan  

  357. 金属負極蓄電池の実現に向けた配向結晶集電体によるデンドライト抑制

    三橋貴仁, 伊藤靖仁, 竹内幸久, 原田俊太, 田川美穂, 宇治原 徹

    第54回電池討論会 

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    Event date: 2013.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪国際会議場、大阪府   Country:Japan  

  358. 亜鉛負極近傍における亜鉛イオン濃度場の評価

    萩ノ崎賢也, 伊藤靖仁, 三橋貴仁, 酒井康彦, 長田孝二, 寺島 修, 宇治原 徹, 式田光宏, 肥田博隆

    第54回電池討論会 

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    Event date: 2013.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪国際会議場、大阪府   Country:Japan  

  359. "Increase in the Growth Rate by Rotating the Seed Crystal at a High Speed during the Solution Growth of SiC" International conference

    T. Umezaki, D. Koike, S. Harada, and T. Ujihara

    the International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013) 

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    Event date: 2013.9 - 2013.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  360. "The Suppression of the Trenches by the Control of Solution Flow above Growth Surface in the Solution Growth of SiC" International conference

    C. Zhu, S. Harada, S. Xiao, K. Seki, M. Tagawa, Y. Matsumoto, T. Kato, K. Kurashige, H. Okamura, and T. Ujihara

    the International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013) 

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    Event date: 2013.9 - 2013.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  361. "Control of Dislocation Conversion during Solution Growth by Changing Surface Step Structure" International conference

    S. Harada, Y. Yamamoto, S. Xiao, A. Horio, M. Tagawa, and T. Ujihara

    the International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013) 

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    Event date: 2013.9 - 2013.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  362. "N-Type Doping of 4H-SiC by the Top-Seeded Solution Growth Technique" International conference

    K. Kusunoki, K. Kamei, K. Seki, S. Harada, and T. Ujihara

    the International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013) 

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    Event date: 2013.9 - 2013.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  363. "Dependence of Growth Rate and Surface Morphology of 4H-SiC Crystals Grown from Si-Cr-C and Si-Cr-Al-C Solutions under Various C Solubility and Supersaturation Conditions" International conference

    T. Mitani, N. Komatsu, T. Takahashi, T. Kato, K. Fujii, I. Nagai, T. Ujihara, Y. Matsumoto, K. Kurashige, and H. Okumura

    the International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013) 

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    Event date: 2013.9 - 2013.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  364. 多元溶媒SiC 溶液成長における多形決定機構の解明

    堀尾篤史,原田俊太,田川美穂,宇治原徹

    日本結晶成長学会、第37回 結晶成長討論会 

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    Event date: 2013.9

    Language:English   Presentation type:Poster presentation  

    Venue:長野勤労者いこいの村アゼィリア飯綱、長野県   Country:Japan  

  365. 溶液法による超高品質SiC 結晶成長

    宇治原徹,原田俊太

    日本結晶成長学会、第37回 結晶成長討論会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:長野勤労者いこいの村アゼィリア飯綱、長野県   Country:Japan  

  366. 脂質分子をキャリアとしたDNA被覆金ナノ粒子の2次元結晶化

    磯貝卓巳,Agnes Piednoir,赤田英里,赤星祐樹,手老龍吾,原田俊太,宇治原徹,田川美穂

    公益社団法人応用物理学会 2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学京田辺キャンパス、京都府   Country:Japan  

  367. 「講演奨励賞受賞記念講演」(15分)可視光励起光電子分光法による伝導電子の直接観察

    市橋史朗,志村大樹,西谷健治,桒原真人,伊藤孝寛,原田俊太,田川美穂,宇治原徹

    公益社団法人応用物理学会 2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学京田辺キャンパス、京都府   Country:Japan  

  368. 可視光励起光電子分光法による半導体超格子構造の伝導キャリア観察

    西谷健治,市橋史朗,志村大樹,桒原真人,伊藤孝寛,原田俊太,田川美穂,宇治原徹

    公益社団法人応用物理学会 2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学京田辺キャンパス、京都府   Country:Japan  

  369. 角度分解光電子分光法を用いた半導体超格子のミニバンド評価

    志村大樹,市橋史朗,西谷健治,原田俊太,伊藤孝寛,桒原真人,松波雅治,木村真一,田川美穂,宇治原徹

    公益社団法人応用物理学会 2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学京田辺キャンパス、京都府   Country:Japan  

  370. SiC 溶液成長における流れ制御によるトレンチ形成の抑制

    朱燦,原田俊太,関和明,肖世玉,田川美穂,松本祐司,加藤智久,蔵重和央,奥村元,宇治原徹

    公益社団法人応用物理学会 2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学京田辺キャンパス、京都府   Country:Japan  

  371. SiC溶液成長過程における貫通転位変換と成長表面のステップ構造

    原田俊太,山本祐治,肖世玉,堀尾篤史,田川美穂,宇治原徹

    公益社団法人応用物理学会 2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学京田辺キャンパス、京都府   Country:Japan  

  372. SiC溶液成長過程における基底面転位の形成

    肖世玉,朱燦,原田俊太,宇治原徹

    公益社団法人応用物理学会 2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学京田辺キャンパス、京都府   Country:Japan  

  373. SiCフラックス成長におけるSi-NiフラックスのAl添加効果

    小沼碧海,丸山伸伍,原田俊太,宇治原徹,加藤智久,蔵重和央,奥村元,松本祐司

    公益社団法人応用物理学会 2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学京田辺キャンパス、京都府   Country:Japan  

  374. IBAD-MgO/金属テープ上へのBaFe2(As,P)2薄膜のMBE成長と評価

    森康博,Kruth Fritz,生田博志,川口昂彦,Hanisch J,Holzapfel B,飯田和昌,Tarantini C,田渕雅夫,宇治原徹,藤本亮祐

    公益社団法人応用物理学会 2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:同志社大学京田辺キャンパス、京都府   Country:Japan  

  375. Fe 過剰BaFe2(As,P)2 薄膜の臨界電流密度増大の起源

    森康博,藤本亮祐,坂上彰啓,原田俊太,宇治原徹,田渕雅夫,生田博志

    公益社団法人応用物理学会 2013年 第74回応用物理学会秋季学術講演会 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:同志社大学京田辺キャンパス、京都府   Country:Japan  

  376. 多元溶媒を用いた高アスペクト比AlN ウィスカーの成長

    陳鳴宇、松原弘明、水野恒平、永冶仁、竹内幸久、原田俊太、宇治原徹、青木祐一、小原公和、加納豊広

    公益社団法人日本セラミックス協会 第26回秋季シンポジウム 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:信州大学、長野県   Country:Japan  

  377. "Effect of solution flow velocity on the step bunching in solution growth of SiC" International conference

    Can Zhu, Shunta Harada, Kazuaki Seki, Miho Tagawa, Yuji Matsumoto, Tomohisa Kato, Kazuhisa Kurashige, Hajime Okumura, Toru Ujihara

    17th International Conference on Crystal Growth and Epitaxy (ICCGE-17) 

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    Event date: 2013.8

    Language:English   Presentation type:Poster presentation  

    Country:Poland  

  378. "Evolution of threading screw dislocation conversion during solution growth of 4H-SiC" International conference

    Shunta Harada, Yuji Yamamoto, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Miho Tagawa, Toru Ujihara

    17th International Conference on Crystal Growth and Epitaxy (ICCGE-17) 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  379. "Ultra-high quality SiC crystal grown by solution method utilizing the conversion from threading dislocations to basal plane defects" International conference

    Toru Ujihara, Yuji Yamamoto, Shunta Harada, Shiyu Xiao, Kazuaki Seki

    17th International Conference on Crystal Growth and Epitaxy (ICCGE-17) 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  380. "Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers" International conference

    Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa

    17th International Conference on Crystal Growth and Epitaxy (ICCGE-17) 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  381. "Two Pathways Determining Chirality in NaClO3 Crystals Grown from Solution via Achiral Precursors" International conference

    Hiromasa Niinomi, Hitoshi Miura, Yuki Kimura, Takahiro Kuribayashi, Makio Uwaha, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto

    17th International Conference on Crystal Growth and Epitaxy (ICCGE-17) 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  382. "Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C based solutions under various temperature gradient conditions" International conference

    Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura

    17th International Conference on Crystal Growth and Epitaxy (ICCGE-17) 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  383. "Growth of high quality 3C-SiC on hexagonal SiC seed using TSSG method" International conference

    Kazuaki Seki, Shota Yamamoto, Shunta Harada, Toru Ujihara

    17th International Conference on Crystal Growth and Epitaxy (ICCGE-17) 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  384. "Two-dimensional crystallization of DNA-functionalized nanoparticles via lipid diffusion in supported lipid bilayers" International conference

    Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa

    15th International Summer School on Crystal Growth(ISSCG-15) 

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    Event date: 2013.8

    Language:English   Presentation type:Poster presentation  

    Country:Poland  

  385. 溶液法の現状と課題

    宇治原徹

    応用物理学会 先進パワー半導体研究会 第8回個別討論会 「SiC基板結晶に求められるスペック」 

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    Event date: 2013.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学、愛知県   Country:Japan  

  386. "Nanoparticle Assembly mediated by Designed DNA Nanostructures" International conference

    Miho Tagawa, Oleg Gang, Kevin Yager, Takumi Isogai, Eri Akada, Shunta Harada, Toru Ujihara

    Programmable Self-Assembly of Matter Conference 2013 

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    Event date: 2013.6 - 2013.7

    Language:English   Presentation type:Poster presentation  

    Country:United States  

  387. マクロステップを利用した高品質SiC溶液成長

    宇治原徹

    日本結晶成長学会ナノ構造・エピタキシャル成長分科会 2013春季講演会,SiC結晶成長講演会 ~SiC半導体の現在の課題と将来展望~ 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:大阪大学、銀杏会館3階   Country:Japan  

  388. Solution growth of high quality 3C-SiC on a vicinal 6H-SiC International conference

    T. Ujihara, K. Seki, S. Yamamoto, S. Harada, M. Tagawa

    HeteroSiC-WASMPE2013 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  389. Ultrahigh-resolution direct observation of mini-bands formed in InGaAs/AlGaAs superlattice International conference

    Daiki Shimura, Fumiaki Ichihashi, Kenji Nishitani, Shunta Harada, Makoto Kuwahara, Takahiro Ito, Masaharu Matsunami, Shin-ichi Kimura, Takenobu Sakai, Miho Tagawa, Toru Ujihara

    39th IEEE Photovoltaic Specialists Conference 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  390. Electron Spectroscopy of Conduction Electrons Exited by Visible Light Utilizing NEA Surface International conference

    Fumiaki Ichihashi, Daiki Shimura, Kenji Nishitani, Makoto Kuwahara, Takahiro Ito, Shunta Harada, Miho Tagawa, Toru Ujihara

    39th IEEE Photovoltaic Specialists Conference 

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    Event date: 2013.6

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  391. 高品質SiC溶液成長

    宇治原徹、原田俊太

    一般社団法人資源・素材学会 平成25年度春季大会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:千葉工業大学津田沼キャンパス、千葉県   Country:Japan  

  392. 酸化タングステンの酸素欠損に伴う熱伝導率の変化

    弓削勇輔,原田俊太,田川美穂,宇治原徹

    2012年春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学,神奈川県   Country:Japan  

  393. 「講演奨励賞受賞記念講演」”3C-SiC 溶液成長における多形制御と欠陥抑制”

    関和明,山本翔太,原田俊太,宇治原徹

    2012年春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:神奈川工科大学,神奈川県   Country:Japan  

  394. SiC溶液成長において流速の変化が表面モフォロジーに与える影響

    朱燦,原田俊太,関和明,田川美穂,松本祐司,加藤智久,蔵重和央,奥村元,宇治原徹

    2012年春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学,神奈川県   Country:Japan  

  395. 4H-SiC溶液成長過程における貫通らせん転位変換により形成する欠陥の微細構造

    原田俊太,國松亮太,田川美穂,山本悠太,荒井重勇,田中信夫,宇治原徹

    2012年春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学,神奈川県   Country:Japan  

  396. SiCr系溶媒を用いた2インチ4H-SiCバルク成長

    三谷武志,小松直佳,岡村雅之,高橋徹夫,加藤智久,蔵重和央,宇治原徹,松本祐司,奥村元

    2012年春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学,神奈川県   Country:Japan  

  397. AlGaAs/InGaAs超格子構造におけるミニバンドの超高分解能直接観察

    志村大樹,市橋史朗,原田俊太,桒原真人,伊藤孝寛,松波雅治,木村真一,酒井武信,田川美穂,宇治原徹

    2012年春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学,神奈川県   Country:Japan  

  398. NEA表面を利用した伝導電子エネルギーの直接測定

    市橋史朗,志村大樹,西谷健治,原田俊太,桑原真人,伊藤孝寛,田川美穂,宇治原徹

    2012年春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学,神奈川県   Country:Japan  

  399. 脂質分子の拡散によるDNA被覆金ナノ粒子の2次元構造体形成

    磯貝卓巳,Agnes Piednoir,赤田英里,祐樹赤星,手老龍吾,原田俊太,宇治原徹,田川美穂

    2012年春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学,神奈川県   Country:Japan  

  400. BaFe2(As,P)2薄膜のMBE成長と接合作製

    森康博,坂上彰啓,川口昂彦,田渕雅夫,宇治原徹,生田博志

    2012年春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学,神奈川県   Country:Japan  

  401. NdFeAs(O,F)薄膜上のCaF2層の成長及び接合作製

    角谷直紀,川口昂彦,田渕雅夫,宇治原徹,生田博志

    2012年春季 第60回 応用物理学関係連合講演会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学,神奈川県   Country:Japan  

  402. Al融液窒化法を用いたAlN多結晶の作製におけるMgによる窒化促進効果の検証

    水野恒平、松原弘明、永冶仁、竹内幸久、原田俊太、宇治原徹、加納豊広、青木祐一、小原公和

    日本セラミックス協会2013年 年会 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学大岡山キャンパス   Country:Japan  

  403. 溶液成長過程における貫通転位変換を利用した高品質4H-SiCの実現

    原田俊太, 山本祐治, 関和明, 田川美穂, 宇治原徹

    SiC及び関連ワイドギャップ半導体研究会 第21回講演会 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪市中央公会堂、大阪府   Country:Japan  

  404. 電流による4H-SiC溶液成長の成長速度制御

    三谷武史,  岡村雅之, 高橋徹夫 小松直佳,  加藤智久,  宇治原徹,  松本祐司, 蔵重和央, 奥村元

    SiC及び関連ワイドギャップ半導体研究会 第21回講演会 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪市中央公会堂、大阪府   Country:Japan  

  405. TSSG法による高品質3C-SiC

    関和明, 原田俊太, 宇治原徹

    SiC及び関連ワイドギャップ半導体研究会 第21回講演会 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪市中央公会堂、大阪府   Country:Japan  

  406. Si-C溶液で成長される4H-SiC結晶の成長レート、表面形態の過飽和度依存性

    小松直佳,  三谷武史, 岡村雅之, 高橋徹夫 加藤智久, 宇治原徹,  松本祐司, 蔵重和央, 奥村元

    SiC及び関連ワイドギャップ半導体研究会 第21回講演会 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪市中央公会堂、大阪府   Country:Japan  

  407. 溶液成長法におけるSiC単結晶のキャリア密度および不純物濃度の測定

    藤井邦治, 武井康一, 長井一郎, 三谷武史, 小松直佳, N.Senguttuvan, 高橋哲夫, 松本祐司, 宇治原徹, 加藤智久, 蔵重和央, 奥村元

    SiC及び関連ワイドギャップ半導体研究会 第21回講演会 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪市中央公会堂、大阪府   Country:Japan  

  408. Si-C-X溶媒を用いたSiC溶液成長における結晶化多形の熱力学的考察

    堀尾篤史, 原田俊太,宇治原徹

    SiC及び関連ワイドギャップ半導体研究会 第21回講演会 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪市中央公会堂、大阪府   Country:Japan  

  409. 透過電子顕微鏡法によるSiC溶液成長における欠陥挙動解析

    原田俊太, 國松亮太, 田川美穂, 山本悠太, 荒井重勇, 田中信夫, 宇治原徹

    SiC及び関連ワイドギャップ半導体研究会 第21回講演会 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪市中央公会堂、大阪府   Country:Japan  

  410. 溶液法による高品質SiC結晶成長メカニズム

    原田俊太, 山本祐治, 関和明, 堀尾篤史, 三橋貴仁, 田川美穂, 宇治原徹

    第42回結晶成長国内会議(NCCG-42)  

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学、福岡県   Country:Japan  

  411. SiC溶液成長における窒素ドープによる積層欠陥の形成

    原田俊太, 関和明, 楠一彦, 田川美穂, 宇治原徹

    第42回結晶成長国内会議(NCCG-42)  

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学、福岡県   Country:Japan  

  412. 3C-SiC溶液成長における双晶抑制

    関和明, 原田俊太, 宇治原徹

    第42回結晶成長国内会議(NCCG-42)  

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学、福岡県   Country:Japan  

  413. 一方向の溶液流れ下におけるSiCのステップバンチングの挙動

    朱燦, 原田俊太, 関和明, 新家寛正, 田川美穂, 宇治原徹

    第42回結晶成長国内会議(NCCG-42)  

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学、福岡県   Country:Japan  

  414. 溶液法によるα-Al2O3上へのAlNヘテロエピタキシャル成長

    松原弘明, 水野恒平, 竹内幸久, 原田俊太, 木藤泰男, 奥野英一, 宇治原徹

    第42回結晶成長国内会議(NCCG-42)  

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学、福岡県   Country:Japan  

  415. 溶液法による3C-SiCバルク結晶成長

    関和明, 原田俊太, 宇治原徹

    第42回結晶成長国内会議(NCCG-42)  

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学、福岡県   Country:Japan  

  416. Solution growth of AlN single crystal on sapphia International conference

    Hiroaki. Matsubara, Kohei Mizuno, Yukihisa Takeuchi, Yoshikazu Takeda, Yuichi Aoki, Kimio Kohara, and Toru Ujihara

    International Workshop on Nitride Semiconductors 2012(IWN2012) 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  417. Evolution of Threading Edge Dislocation During Solution Growth of SiC International conference

    S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, and T.Ujihara

    2012 International Conference on Solid State Devices and Materials (SSDM2012) 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  418. 紫外光電子分光法を用いた超格子ミニバンドの直接観察

    市橋史朗, 志村大樹, 桑原真人, 原田俊太, 伊藤孝寛, 松浪雅治, 木村真一, 宇治原徹

    公益社団法人応用物理学会・東海支部 第19回基礎セミナー「透明導電膜―基礎から応用―」 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:岐阜大学、岐阜県   Country:Japan  

  419. Direct Observation of Mini-bands in AlGaAs/GaAs Superlattice for intermediate Band Solar Cell International conference

    D. Shimura, K. Hashimoto, F. Ichihashi, S. Harada, T. Ito, M. Kuwahara, M. Matsunami, S. Kimura, T. Sakai and T. Ujihara

    International Union of Materials Research Societies International Conference on Electronic Materials (IUMRS-ICEM2012) 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  420. Direct Observation of Defect Evolution during Solution Growth of SiC by Synchrotron X-ray Topography International conference

    S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, and T.Ujihara

    International Union of Materials Research Societies International Conference on Electronic Materials (IUMRS-ICEM2012) 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  421. VS法による高アスペクト比AlNウィスカーの成長

    松原弘明, 水野恒平, 竹内幸久, 原田俊太, 宇治原徹, 青木祐一, 小原公和

    公益社団法人日本セラミックス協会 第25回秋季シンポジウム 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学、愛知県   Country:Japan  

  422. Al融液窒化法において成長温度がAlN組織形成に与える影響

    水野恒平, 松原弘明,竹内幸久, 原田俊太, 宇治原徹, 青木祐一, 小原公和

    公益社団法人日本セラミックス協会 第25回秋季シンポジウム 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学、愛知県   Country:Japan  

  423. 溶液法による超高品質SiC結晶成長

    宇治原徹, 原田俊太,山本祐治, 関 和明

    公益社団法人日本セラミックス協会 第25回秋季シンポジウム 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋大学、愛知県   Country:Japan  

  424. 4H-SiC溶液成長における貫通刃状転位の選択的変換

    原田俊太, 山本祐治, 関 和明, 堀尾篤史, 三橋貴仁, 宇治原徹

    2012年秋季 第73回 応用物理学関係連合講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学城北地区, 愛媛県   Country:Japan  

  425. SiC溶液成長における流れがステップバンチングに及ぼす影響

    Can Zhu, 原田俊太, 関 和明, 新家寛正, 宇治原徹

    2012年秋季 第73回 応用物理学関係連合講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学城北地区, 愛媛県   Country:Japan  

  426. TSSG法で育成した4H-SiC結晶の窒素ドーピング挙動

    楠 一彦, 関 和明, 原田俊太, 亀井一人, 矢代将斉, 宇治原徹

    2012年秋季 第73回 応用物理学関係連合講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学城北地区, 愛媛県   Country:Japan  

  427. DPBフリー3C-SiCの溶液成長

    関 和明, 原田俊太, 宇治原徹

    2012年秋季 第73回 応用物理学関係連合講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学城北地区, 愛媛県   Country:Japan  

  428. 溶液法によるサファイア基板上へのAlN単結晶成長

    松原弘明, 水野恒平, 竹内幸久, 原田俊太, 木藤泰男, 奥野英一, 宇治原徹

    2012年秋季 第73回 応用物理学関係連合講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学城北地区, 愛媛県   Country:Japan  

  429. NdFeAs (O,F)薄膜を用いた超伝導接合の作製

    川口昂彦, 角谷直紀, 田渕雅夫, 宇治原徹, 竹田美和, 生田博志

    2012年秋季 第73回 応用物理学関係連合講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学城北地区, 愛媛県   Country:Japan  

  430. BaFe2(As,P)2超伝導薄膜のMBE成長と粒界特性の評価

    森 康博, 坂上彰啓, 川口昂彦, 田渕雅夫, 宇治原徹, 竹田美和,生田博志

    2012年秋季 第73回 応用物理学関係連合講演会 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学城北地区, 愛媛県   Country:Japan  

  431. Solution growth of DPB-free 3C-SiC International conference

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Saint Petersburg, Saint-Petersburg, Russia   Country:Japan  

  432. Effect of surface polarity on the conversion of threading dislocations in solution growth International conference

    Y.Yamamoto, S.Harada, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara

    The 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012) 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  433. Possibility for elimination of dislocations in SiC crystal: conversion of threading edge dislocations by solution growth International conference

    S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, C.Zhu, M.Tagawa, T.Ujihara

    The 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012) 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  434. Influence of solution flow on step bunching in solution growth of SiC International conference

    C.Zhu, K.Seki, S.Harada, H.Niinomi, M.Tagawa, T.Ujihara

    The 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012) 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  435. Reduction of threading screw dislocation density utilizing defect conversion during solution growth of 4H-SiC International conference

    S.Harada, Y.Yamamoto, K.Seki, T.Ujihara

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  436. Spin-polarized and Pulsed TEM Using a Laser-driven Semiconductor Photocathode International conference

    N. Tanaka, M. Kuwahara, K. Saitoh, S. Kusunoki, T. Ujihara, H. Asano, Y. Takeda and T. Nakanishi

    Microscopy & Microanalysis 2012 

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    Event date: 2012.7 - 2012.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  437. レーザー励起半導体電子源を用いた30kVパルスTEMの開発

    田中信夫、桑原真人、楠聡一郎、浅野秀文、宇治原徹、齋藤晃、竹田美和、中西彊

    日本顕微鏡学会第68回学術講演会 

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    Event date: 2012.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:つくば国際会議場、茨城県   Country:Japan  

  438. スピン編極TEMにおけるNEAフォトカソードからの低エネルギー分散ビームの生成

    楠聡一郎、桑原真人、宇治原徹、浅野秀文、竹田美和、中西彊、齋藤晃、田中信夫

    日本顕微鏡学会第68回学術講演会 

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    Event date: 2012.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:つくば国際会議場、茨城県   Country:Japan  

  439. Spin-polarized TEM using an NEA photocathode International conference

    M. Kuwahara, S. Kusunoki, K. Saitoh, T. Ujihara, and N. Tanaka

    The 3rd International Symposium on Advanced Microscopy and Theoretical Calculations (AMTC3) 

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    Event date: 2012.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  440. Efficient Process for Ultrahigh Quality 4H-SiC Crystal Utilizing Solution Growth on Off-axis Seed Crystal International conference

    Shunta Harada, Yuji Yamamoto, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Toru Ujihara

    MRS Spring Meeting & Exhibit 

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    Event date: 2012.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  441. Reduction of Defects in SiC by Solution Growth for High Performance Power Device International conference

    S. Harada, Alexander, K. Seki, Y. Yamamoto, T. Ujihara, J. Yamasaki, N. Tanaka

    Interational symposium on role of electron microscopy in industry 

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    Event date: 2012.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  442. Solution growth of high-quality SiC crystal International conference

    Toru Ujihara

    INDO-JAPAN Conference on Frontier Nano-Materials for Energy (FNE-2012) 

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    Event date: 2012.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  443. Solution growth of high-quality SiC crystal - polytype control and defect elimination - International conference

    Toru Ujihara

    Nagoya Univ.-Tsinghua Univ.-Toyota Motor Corp.-Hokkaido Univ. -Univ. Electro. Sci. Tech. China Joint Symposium -Materials Science and Nanotechnology for the 21th Century- 

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    Event date: 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  444. Formation of Different Polytypes during 4H-SiC Solution Growth International conference

    Shunta Harada, Alexander, Kazuaki Seki, Yuji Yamamoto, Toru Ujihara, Jun Yamasaki, Nobuo Tanaka

    International Symposium on EcoTopia Science 2011 (ISETS '11) 

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    Event date: 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  445. 溶液法を用いた4H-SiC結晶における貫通らせん転位の消滅

    山本祐治, 原田俊太, 関和明, 堀尾篤史, 三橋貴仁, 宇治原徹

    公益社団法人応用物理学会 第20回シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会 

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    Event date: 2011.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛知県   Country:Japan  

  446. SiC 溶液成長における貫通転位の変換過程 ーUltra-High Quality の可能性ー

    宇治原徹,原田俊太,山本祐治,関和明,堀尾篤史,三橋貴仁

    公益社団法人応用物理学会 第20回シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会 

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    Event date: 2011.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛知県   Country:Japan  

  447. 成長速度論的多形選択成長を用いた3C-SiCバルク結晶の実現

    関和明, 山本祐治, 原田俊太, 宇治原徹, 竹田美和

    公益社団法人応用物理学会 第20回シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会 

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    Event date: 2011.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛知県   Country:Japan  

  448. Solution growth of high-quality SiC crystal for next-generation power device materials International conference

    Shunta Harada, Toru Ujihara

    1st Global Conference on Materials and Technology for the Future "Green Vehicle" 

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    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  449. MBE法によるNdFeAs(O,F)上へのCaF2絶縁膜成長

    上村彦樹, 川口昴彦, 大野俊也, 田渕雅夫, 宇治原徹, 竹田美和, 生田博志

    日本結晶成長学会 第41回結晶成長国内会議(NCCG-41) 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:茨城県   Country:Japan  

  450. AlN溶液成長においてMg蒸気圧が融液の窒化に与える影響

    水野恒平, 松原弘明, 竹内幸久, 原田俊太, 宇治原徹, 青木祐一, 小原公和

    日本結晶成長学会 第41回結晶成長国内会議(NCCG-41) 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:茨城県   Country:Japan  

  451. 6H-SiC上への3C-SiC溶液成長における速度論的多形選択メカニズム

    関和明, 山本祐治, 原田俊太, 宇治原徹, 竹田美和

    日本結晶成長学会 第41回結晶成長国内会議(NCCG-41) 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:茨城県   Country:Japan  

  452. SiC溶液成長における転位変換過程

    宇治原徹, 小澤茂太, 山本祐治, 関和明, 原田俊太

    日本結晶成長学会 第41回結晶成長国内会議(NCCG-41) 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:茨城県   Country:Japan  

  453. 溶液成長における4H-SiC上での多形変化挙動

    原田俊太, アレキサンダー, 関和明, 山本祐治, 宇治原徹

    日本結晶成長学会 第41回結晶成長国内会議(NCCG-41) 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:茨城県   Country:Japan  

  454. Polytype transformation path on 4H-SiC during top-seeded solution growth International conference

    S. Harada, Alexander, K. Seki, Y. Yamamoto and T. Ujihara

    2011 International Conference on Solid State Devices and Materials (SSDM 2011) 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  455. Dissociation of Screw Dislocations Assisted by Step-flow Process in SiC Solution Growth International conference

    T.Ujihara, S.Kozawa, K.Seki, Y.Yamamoto, Alexander and S.Harada

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  456. Al融液窒化法における高密度AlN形成メカニズム

    水野恒平, 松原弘明, 竹内幸久, 原田俊太, 宇治原徹, 青木祐一, 小原公和

    公益社団法人日本セラミックス協会 第24回秋季シンポジウム 

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    Event date: 2011.9

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  457. Polytype-Controlled Solution Growth of 3C-SiC on 6H-SiC (0001) by Supersaturation in Si-Sc-C Ternary System International conference

    September 12, The 2011 International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), Cleveland, Ohio, USA, September 11-16  

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  458. Conversion Mechanism of Threading Screw Dislocation During SiC Solution Growth International conference

    September 14, The 2011 International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), Cleveland, Ohio, USA, September 11-16 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  459. Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth International conference

    September 12, The 2011 International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), Cleveland, Ohio, USA, September 11-16  

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  460. 過飽和度制御による6H-SiC(0001)上への3C-SiC溶液成長

    関 和明,山本祐治,原田俊太,宇治原徹,竹田美和

    8月30日, 山形大学 小白川キャンパス, 山形県, 第72回応用物理学会学術講演会, 2011年8月29日-9月2日, 30a-ZB-1 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  461. AlGaAs中間層及びSi3N4反射防止膜の導入による透過型GaAs/GaAsP歪み超格子スピン偏極フォトカソードの量子効率向上

    市橋史朗,金 秀光,山本尚人,真野篤志,桑原真人,渕 真悟,宇治原徹,竹田美和

    8月31日, 山形大学 小白川キャンパス, 山形県, 第72回応用物理学会学術講演会, 2011年8月29日-9月2日, 31a-ZA-13 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  462. MBE成長したNdFeAsO薄膜へのフッ素ドーピング

    川口昂彦,上村彦樹,大野俊也,田渕雅夫,宇治原徹,竹田美和,生田博志

    8月31日, 山形大学 小白川キャンパス, 山形県, 第72回応用物理学会学術講演会, 2011年8月29日-9月2日, 31a-ZT-10 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  463. NdFeAs(O,F)薄膜の超伝導特性の基板依存性

    上村彦樹,川口昂彦,大野俊也,田渕雅夫,宇治原徹,竹田美和,生田博志

    8月31日, 山形大学 小白川キャンパス, 山形県, 第72回応用物理学会学術講演会, 2011年8月29日-9月2日, 31a-ZT-9 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  464. MBE法によるBaFe2(As,P)2超伝導薄膜の成長

    上彰啓,川口昂彦,田渕雅夫,宇治原徹,竹田美和,生田博志

    8月31日, 山形大学 小白川キャンパス, 山形県, 第72回応用物理学会学術講演会, 2011年8月29日-9月2日, 31a-ZT-8 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  465. SiC溶液成長における貫通らせん転位分解メカニズム

    宇治原徹,小澤茂太,関 和明,山本祐治,原田俊太

    8月30日, 山形大学 小白川キャンパス, 山形県, 第72回応用物理学会学術講演会, 2011年8月29日-9月2日, 30a-ZB-2 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  466. Improvement of reaction rate in AlN solution growth by Mg vapor supply International conference

    July 11, 9th International Conference on Nitride Semiconductors, Glasgow, UK, July 10-15 

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    Event date: 2011.7

    Language:English   Presentation type:Poster presentation  

    Country:United Kingdom  

  467. 酸化物基板表面上の細胞膜モデルシステム:支持平面脂質膜のダイナミクスと基板表面の影響

    手老龍吾,佐崎 元, 宇治原徹, 宇理須恒雄

    応用物理学会 有機分子・バイオエレクトロニクス分科会 研究会, 神戸大学, 2011年6月24-25日 

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    Event date: 2011.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  468. T6/16 Polytype-Selective Growth of SiC by Supersaturation Control in Solution Growth International conference

    June 29, 5th International Workshop on Crystal Growth Technology(IWCGT-5), Berlin, Germany, June 26-30 (2011) 

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    Event date: 2011.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  469. スピン偏極パルスTEM用電子源と照射系の開発

    桑原真人, 中西 彊, 竹田美和, 浅野秀文, 齋藤晃, 宇治原徹, 田中信夫

    福岡国際会議場, 福岡県, 5月16日, 日本顕微鏡学会第67回学術講演会, 2011年5月16-18日 

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    Event date: 2011.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  470. 溶液法によるSiC結晶成長 ー多形制御・結晶性ー

    宇治原徹

    第58回 応用物理学関係連合講演会, 神奈川工科大学, 2011年3月24-27日 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  471. Mg気相供給を用いた多結晶AlNの溶液成長

    水野恒平, 松原弘明, 宇治原徹, 竹田美和, 青木祐一, 竹内幸久

    日本セラミックス協会 2011年 年会, 静岡大学, 浜松キャンパス, 2011年3月16-18日 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  472. MBE法によるNdFeAs(O,F)超伝導薄膜の成長と評価

    上村彦樹, 川口昂彦, 大野俊也, 田渕雅夫, 宇治原徹, 竹田美和, 生田博志

    第58回 応用物理学関係連合講演会, 神奈川工科大学, 2011年3月24-27日 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  473. TEM法による超格子の層厚変調のメカニズムの解析

    金 秀光, 中原弘貴, 斎藤 晃, 坂 貴, 宇治原徹, 田中信夫, 竹田美和

    第58回 応用物理学関係連合講演会, 神奈川工科大学, 2011年3月24-27日 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  474. 溶液成長における4H-SiC(0001)面上の成長多形変化過程の観察

    アレキサンダー, 関 和明, 小澤茂太, 山本裕治, 宇治原徹, 竹田美和

    第58回 応用物理学関係連合講演会, 神奈川工科大学, 2011年3月24-27日 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  475. 溶液成長により作製したSiC結晶の転位挙動解析

    小澤茂太, 関 和明, 山本祐治, Alexander, 宇治原徹, 竹田美和

    第58回 応用物理学関係連合講演会, 神奈川工科大学, 2011年3月24-27日 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  476. 放射光トポグラフィーによるSiC溶液成長における転位挙動解析

    小澤 茂太, 関 和明, 山本祐治, Alexander, 宇治原徹, 山口博隆, 竹田美和

    PF研究会「X線トポグラフィーの現状と展望」, 高エネルギー加速器研究機構, つくば, 2011年1月11-12日 

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    Event date: 2011.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  477. Hierarchic lipid diffusion in supported lipid bilayers on oxide surfaces International conference

    The 2010 International Chemical Congress of Pacific Basin Societies (Pacifichem), Honolulu, Hawaii, USA, December 15-20 (2010) 

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    Event date: 2010.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  478. Laser light patterning on phase-separated domain in supported lipid bilayer International conference

    The 2010 International Chemical Congress of Pacific Basin Societies (Pacifichem), Honolulu, Hawaii, USA, 15-20 December (2010) 

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    Event date: 2010.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  479. 液相法によるAlN多結晶体合成とMg添加効果

    水野恒平, 宇治原徹, 竹田美和, 青木祐一, 竹内幸久, 井上 哲

    第20回学生による材料フォーラム, 名古屋大学豊田講堂, 名古屋市, 2010年11月25日 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  480. 6H-SiC上への3C-SiC溶液成長における成長多形と過飽和度の関係

    関 和明, アレキサンダー, 小澤茂太, 山本祐治, 宇治原徹, 竹田美和

    第20回学生による材料フォーラム, 名古屋大学豊田講堂, 名古屋市, 2010年11月25日 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  481. 溶液成長で作製したSiC結晶における欠陥挙動の評価

    小澤茂太, 関 和明, アレキサンダー, 山本祐治, 宇治原徹, 竹田美和

    第19回シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会, つくば国際会議場, つくば市, 2010年10月20-22日 

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    Event date: 2010.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  482. 6H-SiC(0001)上への溶液成長における3C-SiC優先成長メカニズム

    関 和明, アレキサンダー, 小澤茂太, 山本祐治, 宇治原徹, 竹田美和

    第19回シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会, つくば国際会議場, つくば市, 2010年10月20-22日 

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    Event date: 2010.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  483. 溶液成長における4H-SiCの成長多形安定性

    アレキサンダー, 関 和明, 小澤茂太, 山本祐治, 宇治原徹, 竹田美和

    第19回シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会, つくば国際会議場, つくば市, 2010年10月20-22日 

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    Event date: 2010.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  484. 液相法による AlN 多結晶体合成とMg 添加効果

    水野恒平, 宇治原徹, 竹田美和, 青木祐一, 竹内幸久, 井上 哲

    日本金属学会2010年秋期(第147回)大会, 北海道大学, 2010年9月25-27日 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  485. Pulsed spin-polarized electron source toward a transmission electron microscope International conference

    17th International Microscopy Congress I1501, Rio de Janeiro, Brazil, September 19-24 (2010) 

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    Event date: 2