株式会社U-MAP   取締役 CTO

2016.11

国立研究開発法人産業技術総合研究所(産総研)   エレクトロニクス・製造領域　研究戦略部　窒（現：研究企画室）化物半導体先進デバイスオープンイノベーションラボラトリ   副ラボ長

2016.11 - 2021.3

名古屋大学未来材料・システム研究所　未来エレクトロニクス集積研究センター・教授

2015.10

名古屋大学グリーンモビリティ連携研究センター・教授

2014.4 - 2015.9

名古屋大学大学院工学研究科・教授

2010.10

名古屋大学大学院工学研究科附属バックキャストテクノロジー材料センター　准教授（兼任）

2008.10

Associate Professor, Graduate School of Engineering, Nagoya University

2007.4

Associate Professor, Graduate School of Engineering, Nagoya University

2004.3 - 2007.3

Assistant Professor, Institute for Materials Research, Tohoku University

1999.4 - 2004.2

ICSCRM2019　実行委員会   プログラム委員  

2019.6 - 2019.10   

日本結晶成長学会 理事（副会長(兼)学会賞委員会・バルク成長分科会）   理事（副会長(兼)学会賞委員会・バルク成長分科会）  

2019.4 - 2022.3   

2019年2020年 日本金属学会・日本鉄鋼協会講演大会   委員  

2019.4 - 2021.3   

国立研究開発法人 科学技術振興機構(JST) ERATO   選考評価者  

2018.7 - 2019.3   

一般社団法人電子情報技術産業協会(JEITA)半導体信頼性技術委員会「化合物パワー半導体信頼性技術WG」   客員委員  

2018.4 - 2020.3   

一般社団法人電子情報技術産業協会(JEITA)半導体信頼性技術委員会「個別半導体（パワー系）信頼性試験規格PG」   客員委員  

2018.4 - 2020.3   

プロセス研究会   会員  

2017.4   

公益社団法人日本金属学会分科会   委員  

2017.4 - 2019.3   

NEDO技術委員会   NEDO技術委員　  

2015.9 - 2017.3   

平成27年度地域経済産業活性化対策調査技術審査委員会   審査委員  

2015.7 - 2016.3   

公益財団法人名古屋産業科学研究所   非常勤所員  

2014.12   

ICCGE-18実行委員会   委員  

2014.9 - 2016.8   

第53,54期　応用物理学会   代議員  

2014.2 - 2016.1   

ISPlasma2014/IC-PLANTS2014プログラム委員会   委員  

2013.5 - 2014.3   

ICSCRM2013　実行委員会   実行委員  

2012.3 - 2014.3   

第51,52期　応用物理学会   代議員  

2012.2 - 2014.1   

SSDM2012　国際固体素子材料コンファレンス   論文委員  

2012.2 - 2012.12   

日本金属学会東海支部   理事  

2011.4 - 2012.3   

SSDM2011　国際固体素子材料コンファレンス   論文委員  

2010.12 - 2011.11   

日本学術振興会　水の先進理工学　第183委員会   運営委員  

2010.10   

日本学術振興会　結晶成長の科学と技術　第161委員会   運営委員  

2010.8   

InP関連材料国際会議プログラム   委員  

2009.9   

第39回結晶成長国内会議   実行委員  

2009.6 - 2009.11   

知的クラスター創成事業基礎教育セミナー   企画担当  

2009.4   

日本金属学会東海支部   評議委員  

2009.4 - 2011.3   

第二回おもしろ科学教室実行委員会   メンバー  

2009.1   

おもしろ科学館イン瑞浪2008実行委員会   実行メンバー  

2008.9 - 2008.10   

HACCP対応抗菌環境福祉材料開発研究会   委員  

2008.4 - 2010.3   

「安心・安全・信頼のための抗菌材料」編集委員会   編集委員  

2008.4 - 2010.3   

「分散量子ドット及び蛍光体を用いた広帯域光源の開発」プロジェクト形成委員会   委員  

2008.4 - 2009.3   

第69回応用物理学会学術講演会現地実行委員会   委員  

2007.7 - 2008.9   

公益社団法人応用物理学会東海支部   幹事  

2007.4   

2007年日本金属学会・日本鉄鋼協会秋期大会実行委員会   委員  

2007.3 - 2007.10   

日本結晶成長学会　学会誌編集委員   学会誌編集委員  

2006.11 - 2010.3   

日本結晶成長学会   理事  

2006.4   

名古屋大学21世紀COE「自然に学ぶ材料プロセッシングの創成」教科書編集委員会   編集委員  

2006.4 - 2007.3   

日本金属学会東海支部若手材料研究会   幹事  

2005.4   

日本金属学会会報編集委員会   編集委員  

2005.4 - 2007.3   

日本学術振興会　次世代の太陽電池システム　第175委員会   学界委員  

2004.10   

日本物理学会   世話人  

2004.5 - 2005.4   

博士課程教育リーディングプログラム フォーラム2017　 " Students Award "

2017.10   名古屋大学   SiC 溶液成長における機械学習を用いた溶液温度・流速分布のリアルタイム可視化

ICSCRM2017 Student Poster Award

2017.9   ICSCRM2017   irect Observation of Stacking Faults Expansion in 4H-SiC at High Temperatures by In Situ X-Ray Topography

日本金属学会第29回「優秀ポスター賞」

2017.9   日本金属学会   単結晶Cu集電体を用いた金属Li負極の不均一析出抑制

第40回結晶成長討論会 優秀ポスター賞

2017.9   結晶成長討論会   SiC溶液成長における機械学習を用いた閉鎖空間の溶液温度・流速分布の予測

photo contest award the 18th International Conference on Crystal Growth and Epitaxy

2016.8   18th International Conference on Crystal Growth and Epitaxy   Morphology of AlN whiskers grown by reacting N2 gas and Al vapor

ICSCRM2015 Student Poster Award

2015.10   ICSCRM2015   Distribution of nitrogen doping concentration in 4H-SiC grown by solution method

社団法人未踏科学技術協会　超伝導科学技術研究会　第15回超伝導科学技術賞

2011   社団法人未踏科学技術協会  

第28回応用物理学会講演奨励賞

2010.9   応用物理学会  

第90春季年会優秀講演賞(学術)、2010年

2010.3   日本化学会  

日本金属学会・日本鉄鋼協会東海支部　優秀ポスター賞

2010   日本金属学会・日本鉄鋼協会東海支部  

応用物理学会論文賞

2009.9   応用物理学会  

１９回学生による材料フォーラムで優秀ポスター賞

2009   日本金属学会・日本鉄鋼協会　東海支部  

日本金属学会2006年春季講演大会　第6回優秀ポスター賞

2006   日本金属学会  

第3回日本結晶成長学会奨励賞

2005   日本結晶成長学会  

第16回応用物理学会講演奨励賞

2004   応用物理学会  

第43回原田研究奨励賞

2003   公益財団法人本多記念会  

第13回日本金属学会奨励賞　「材料プロセッシング分野」

2003   日本金属学会  

応用物理学会講演奨励賞

2002   応用物理学会  

非弾性Ｘ線散乱によるルチル型酸化チタンのフォノン分散測定 Reviewed

原田 俊太, 小坂 直輝, 筒井 智嗣, 田中 克志, 田川 美穂, 宇治原 徹

SPring-8/SACLA利用研究成果集   Vol. 10 ( 6 ) page： 521 - 523   2022.12

Bayesian Optimization for Cascade-Type Multistage Processes Reviewed

Kusakawa, S,Takeno, S , Inatsu, Y, Kutsukake, K, Iwazaki, S,Nakano, T , Ujihara, T,Karasuyama, M ,Takeuchi, I

NEURAL COMPUTATION   Vol. 34 ( 12 ) page： 2408 - 2431   2022.11

Thermal conduction in titanium-chromium oxide natural superlattices with an ordered arrangement of nearly pristine interfaces Reviewed

Shunya Sugimoto, Gareoung Kim, Tsunehiro Takeuchi, Miho Tagawa, Toru Ujihara, Shunta Harada

SSRN     2022.10

Optimization of Flow Distribution by Topological Description and Machine Learning in Solution Growth of SiC Reviewed

Masaru Isono,Shunta Harada,Kentaro Kutsukake,Tomoo Yokoyama,Miho Tagawa,Toru Ujihara

ADVANCED THEORY AND SIMULATIONS   Vol. 5 ( 9 )   2022.7

A Transfer Learning-Based Method for Facilitating the Prediction of Unsteady Crystal Growth Reviewed

Yifan Dang,Kentaro Kutsukake,Xin Liu,Yoshiki Inoue,Xinbo Liu,Shota Seki,Can Zhu,Shunta Harada,Miho Tagawa,Toru Ujihara

ADVANCED THEORY AND SIMULATIONS   Vol. 5 ( 9 )   2022.7

Designing a High-Crystallinity Nano-Gapped Particle Superlattice via DNA-Guided Colloidal Crystallization and Dehydration Reviewed

Hayato Sumi, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto, and Miho Tagawa

Crystal Growth＆Design   Vol. 22 ( 6 ) page： 3708 - 3718   2022.4

Nucleation sites of expanded stacking faults detected by in operando x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs Reviewed

Kumiko Konishi, Ryusei Fujita, Keisuke Kobayashi, Akio Yoneyama, Kotaro Ishiji, Hiroyuki Okino, Akio Shima, Toru Ujihara

AIP Advances 12     2022.3

Crossover from incoherent to coherent thermal conduction in bulk titanium oxide natural superlattices

Harada Shunta, Kosaka Naoki, Yagi Takashi, Sugimoto Shunya, Tagawa Miho, Ujihara Toru

SCRIPTA MATERIALIA   Vol. 208   2022.2

Numerical investigation of solute evaporation in crystal growth from solution: A case study of SiC growth by TSSG method

Yifan Dang, Can Zhu, Xin Liu, Wancheng Yu, Xinbo Liu, Koki Suzuki, Tomoaki Furusho, Shunta Harada, Miho Tagawa, Toru Ujihara

Journal of Crystal Growth     2022.2

Data-Driven Optimization and Experimental Validation for the Lab-Scale Mono-Like Silicon Ingot Growth by Directional Solidification Reviewed

Xin Liu, Yifan Dang, Hiroyuki Tanaka, Yusuke Fukuda, Kentaro Kutsukake, Takuto Kojima, Toru Ujihara, Noritaka Usami

ACS OMEGA   Vol. 7 ( 8 ) page： 6665 - 6673   2022.2

Solvent design aiming at solution property induced surface stability: A case study using SiC solution growth

Liu Xinbo, Dang Yifan, Suzuki Koki, Zhu Can, Yu Wancheng, Harada Shunta, Tagawa Miho, Ujihara Toru

JOURNAL OF CRYSTAL GROWTH   Vol. 578   2022.1

High fracture toughness AlN achieved by addition of AlN whiskers and tape-casting

Shimizu Hiroki, Kondo Naoki, Shimamura Akihiro, Hotta Mikinori, Harada Shunta, Ujihara Toru, Ohnishi Yoshihiro

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   Vol. 130 ( 1 ) page： 195 - 198   2022.1

Immobilization of partial dislocations bounding double Shockley stacking faults in 4H-SiC observed by in situ synchrotron X-ray topography

Fujie Fumihiro, Harada Shunta, Suo Hiromasa, Raghothamachar Balaji, Dudley Michael, Hanada Kenji, Koizumi Haruhiko, Kato Tomohisa, Tagawa Miho, Ujihara Toru

MATERIALIA   Vol. 20   2021.12

Bayesian Optimization for Cascade-type Multi-stage Processes Reviewed

Shunya Kusakawa, Shion Takeno, Yu Inatsu, Kentaro Kutsukake, Shogo Iwazaki, Takashi Nakano, Toru Ujihara, Masayuki Karasuyama, Ichiro Takeuchi

arXiv:2111     2021.11

In-operando x-ray topography analysis of SiC metal-oxide-semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations Reviewed

Konishi Kumiko, Fujita Ryusei, Kobayashi Keisuke, Yoneyama Akio, Ishiji Kotaro, Okino Hiroyuki, Shima Akio, Ujihara Toru

JOURNAL OF APPLIED PHYSICS   Vol. 130 ( 14 )   2021.10

Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals Reviewed

Ailihumaer Tuerxun, Peng Hongyu, Fujie Fumihiro, Raghothamachar Balaji, Dudley Michael, Harada Shunta, Ujihara Toru

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS   Vol. 271   2021.9

Two-Step Nanoparticle Crystallization via DNA-Guided Self-Assembly and the Nonequilibrium Dehydration Process

Sumi Hayato, Ohta Noboru, Sekiguchi Hiroshi, Harada Shunta, Ujihara Toru, Tsukamoto Katsuo, Tagawa Miho

CRYSTAL GROWTH & DESIGN   Vol. 21 ( 8 ) page： 4506 - 4515   2021.8

Y Local Atomic Structures for Tunable Ordered Arrangements of Crystallographic Shear Planes in Titanium-Chromium Oxide Natural Superlattices Reviewed

Harada Shunta, Sugimoto Shunya, Kosaka Naoki, Tagawa Miho, Ujihara Toru

JOURNAL OF PHYSICAL CHEMISTRY C   Vol. 125 ( 28 ) page： 15730 - 15736   2021.7

Control of microstructure and mechanical properties of sintered aluminum nitride through addition of aluminum nitride whiskers Reviewed

Kondo Naoki, Shimamura Akihiro, Hotta Mikinori, Shimizu Hiroki, Ujihara Toru, Ohnishi Yoshihiro

JOURNAL OF ASIAN CERAMIC SOCIETIES   Vol. 9 ( 3 ) page： 1248 - 1254   2021.7

Ordered Arrangement of Planar Faults with Picoscale Perfection in Titanium Oxide Natural Superlattices Reviewed

Harada Shunta, Kosaka Naoki, Tagawa Miho, Ujihara Toru

JOURNAL OF PHYSICAL CHEMISTRY C   Vol. 125 ( 20 ) page： 11175 - 11181   2021.5

Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC Reviewed

Fujie Fumihiro, Peng Hongyu, Ailihumaer Tuerxun, Raghothamachar Balaji, Dudley Michael, Harada Shunta, Tagawa Miho, Ujihara Toru

ACTA MATERIALIA   Vol. 208   2021.4

Geometrical design of a crystal growth system guided by a machine learning algorithm Reviewed

Yu Wancheng, Zhu Can, Tsunooka Yosuke, Huang Wei, Dang Yifan, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru

CRYSTENGCOMM   Vol. 23 ( 14 ) page： 2695 - 2702   2021.4

Intensity Interference in a Coherent Spin-Polarized Electron Beam

Kuwahara Makoto, Yoshida Yuya, Nagata Wataru, Nakakura Kojiro, Furui Masato, Ishida Takafumi, Saitoh Koh, Ujihara Toru, Tanaka Nobuo

PHYSICAL REVIEW LETTERS   Vol. 126 ( 12 )   2021.3

Chiral Optical Force Generated by a Superchiral Near-Field of a Plasmonic Triangle Trimer as Origin of Giant Bias in Chiral Nucleation: A Simulation Study Reviewed

Niinomi Hiromasa, Sugiyama Teruki, Cheng An-Chieh, Tagawa Miho, Ujihara Toru, Yoshikawa Hiroshi Y., Kawamura Ryuzo, Nozawa Jun, Okada Junpei T., Uda Satoshi

JOURNAL OF PHYSICAL CHEMISTRY C   Vol. 125 ( 11 ) page： 6209 - 6221   2021.3

Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth

Dang Yifan, Zhu Can, Ikumi Motoki, Takaishi Masaki, Yu Wancheng, Huang Wei, Liu Xinbo, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru

CRYSTENGCOMM   Vol. 23 ( 9 ) page： 1982 - 1990   2021.3

Detection and classification of dislocations in GaN by optical microscope using birefringence

Atsushi Tanaka, Shunta Harada, Kenji Hanada, Yoshio Honda, Toru Ujihara, and Hiroshi Amano,

Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV   ( 117060Y )   2021.3

Analysis of dislocation line tilt in GaN single crystal by Raman spectroscopy

Kokubo Nobuhiko, Tsunooka Yosuke, Inotsume Sho, Fujie Fumihiro, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SA )   2021.1

Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth Reviewed

Dang Yifan, Zhu Can, Ikumi Motoki, Takaishi Masaki, Yu Wancheng, Huang Wei, Liu Xinbo, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru

CrystEngComm   Vol. 23 ( (8) )   2021.1

Geometrical design of a crystal growth system guided by a machine learning algorithm Reviewed

Wancheng Yu, Can Zhu, Yosuke Tsunooka, Wei Huang, Yifan Dang, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara

CrystEngComm     2021

Explainable machine learning for the analysis of transport phenomena in top-seeded solution growth of SiC single crystal Reviewed

Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

  Vol. 16 ( 1 )   2021

Adaptive Bayesian optimization for epitaxial growth of Si thin films under various constraints Reviewed

Osada Keiichi, Kutsukake Kentaro, Yamamoto Jun, Yamashita Shigeo, Kodera Takashi, Nagai Yuta, Horikawa Tomoyuki, Matsui Kota, Takeuchi Ichiro, Ujihara Toru

  Vol. 25   2020.12

Optimal Control of SiC Crystal Growth in the RF-TSSG System Using Reinforcement Learning Reviewed

Wang Lei, Sekimoto Atsushi, Takehara Yuto, Okano Yasunori, Ujihara Toru, Dost Sadik

  Vol. 10 ( 9 )   2020.9

Plasmonic Manipulation of Sodium Chlorate Chiral Crystallization: Directed Chirality Transfer via Contact-Induced Polymorphic Transformation and Formation of Liquid Precursor Reviewed

Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Ujihara Toru, Omatsu Takashige, Miyamoto Katsuhiko, Yoshikawa Hiroshi Y., Kawamura Ryuzo, Nozawa Jun, Okada Junpei T., Uda Satoshi

CRYSTAL GROWTH & DESIGN   Vol. 20 ( 8 ) page： 5493 - 5507   2020.8

Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography Reviewed

Fujie Fumihiro, Harada Shunta, Hanada Kenji, Suo Hiromasa, Koizumi Haruhiko, Kato Tomohisa, Tagawa Miho, Ujihara Toru

ACTA MATERIALIA   Vol. 194   page： 387 - 393   2020.8

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method Reviewed

Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer Reviewed

Inotsume Sho, Kokubo Nobuhiko, Yamada Hisashi, Onda Shoichi, Kojima Jun, Ohara Junji, Harada Shunta, Tagawa Miho, Ujihara Toru

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   Vol. 257 ( 4 )   2020.4

Effect of Crystal Orientation of Cu Current Collectors on Cycling Stability of Li Metal Anodes Reviewed

Ishikawa Kohei, Harada Shunta, Tagawa Miho, Ujihara Toru

ACS APPLIED MATERIALS & INTERFACES   Vol. 12 ( 8 ) page： 9341 - 9346   2020.2

Bayesian optimization for a high- and uniform-crystal growth rate in the top-seeded solution growth process of silicon carbide under applied magnetic field and seed rotation Reviewed

Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

JOURNAL OF CRYSTAL GROWTH   Vol. 532   2020.2

Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field

Wang Lei, Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

CRYSTALS   Vol. 10 ( 2 )   2020.2

Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3 Reviewed

Hisashi Yamada, Sho Inotsume, Naoto Kumagai, Toshikazu Yamada, Mitsuaki Shimizu

Phys. Status Solidi B   Vol. 257 ( 2 ) page： 1900318   2020

Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal Reviewed

Liu Xinbo, Zhu Can, Harada Shunta, Tagawa Miho, Ujihara Toru

CRYSTENGCOMM   Vol. 21 ( 47 ) page： 7260 - 7265   2019.12

Semi in-situ measurement of zincate ion concentration near zinc anode using background-oriented Schlieren technique Reviewed

Ito Yasumasa, Liang Xiao, Ishikawa Kohei, Ujihara Toru, Sakai Yasuhiko, Iwano Koji

  Vol. 1 ( 3 )   2019.12

Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method Reviewed

Wang L., Horiuchi T., Sekimoto A., Okano Y., Ujihara T., Dost S.

JOURNAL OF CRYSTAL GROWTH   Vol. 520   page： 72 - 81   2019.8

Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process Reviewed

Horiuchi Takashi, Wang Lei, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

JOURNAL OF CRYSTAL GROWTH   Vol. 517   page： 59 - 63   2019.7

In Situ Microscopic Observation on Surface Kinetics in Optical Trapping-Induced Crystal Growth: Step Formation, Wetting Transition, and Nonclassical Growth Reviewed

Niinomi Hiromasa, Sugiyama Teruki, Ujihara Toru, Guo Suxia, Nozawa Jun, Okada Junpei, Omatsu Takashige, Uda Satoshi

CRYSTAL GROWTH & DESIGN   Vol. 19 ( 7 ) page： 4138 - 4150   2019.7

Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4HSiC Wafer Fabricated by the Solution Growth Method Reviewed

Kazuaki Seki, Kazuhiko Kusunoki, Shinsuke Harada, Toru Ujihara

Mater. Sci. Forum   Vol. 963   page： 80-84   2019.7

Nondestructive visualization of threading dislocations in GaN by micro raman mapping Reviewed

Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.6

The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide

Horiuchi Takashi, Wang Lei, Sekimoto Atsushi, Okano Yasunori, Yamamoto Takuya, Ujihara Toru, Dost Sadik

CRYSTAL RESEARCH AND TECHNOLOGY   Vol. 54 ( 5 )   2019.5

Plasmonic Trapping-Induced Crystallization of Acetaminophen Reviewed

Niinomi Hiromasa, Sugiyama Teruki, Uda Satoshi, Tagawa Miho, Ujihara Toni, Miyamoto Katsuhiko, Omatsu Takashige

CRYSTAL GROWTH & DESIGN   Vol. 19 ( 2 ) page： 529-537   2019.2

機械学習を用いた結晶成長予測モデルの構築とその応用

宇治原 徹, 角岡 洋介, 畑佐 豪記, 沓掛 健太朗, 石黒 祥生, 村山 健太, 鳴海 大翔, 原田 俊太, 田川 美穂

表面と真空   Vol. 62 ( 3 ) page： 136-140   2019

少量添加で樹脂素材の熱伝導率を向上させるAlNウィスカーフィラーの開発

宇治原 徹

エレクトロニクス実装学会誌   Vol. 22 ( 3 ) page： 195-198   2019

結晶成長学的見地による金属負極の析出形態と結晶方位の相関解明

石川 晃平, 三橋 貴仁, 伊藤 靖仁, 竹内 幸久, 原田 俊太, 田川 美穂, 宇治原 徹

日本結晶成長学会誌   Vol. 46 ( 1 ) page： 136-140   2019

Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC Reviewed

Wang Lei, Horiuchi Takashi, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

JOURNAL OF CRYSTAL GROWTH   Vol. 498   page： 140 - 147   2018.9

In Situ Observation of Chiral Symmetry Breaking in NaClO3 Chiral Crystallization Realized by Thermoplasmonic Micro-Stirring Reviewed

Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Harada Shunta, Ujihara Tom, Uda Satoshi, Miyamoto Katsuhiko, Omatsu Takashige

CRYSTAL GROWTH & DESIGN   Vol. 18 ( 8 ) page： 4230 - 4239   2018.8

Development of angle-resolved spectroscopy system of electrons emitted from a surface with negative electron affinity state Reviewed

Ichihashi Fumiaki, Dong Xinyu, Inoue Akito, Kawaguchi Takahiko, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Toru

REVIEW OF SCIENTIFIC INSTRUMENTS   Vol. 89 ( 7 )   2018.7

Detection of edge component of threading dislocations in GaN by Raman spectroscopy

Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Hara Kazukuni, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

APPLIED PHYSICS EXPRESS   Vol. 11 ( 6 )   2018.6

Dislocation Behavior in Bulk Crystals Grown by TSSG Method Reviewed

K. Seki, K. Kusunoki, Y. Kishida, H. Kaido, K. Moriguchi, M. Kado, H. Daikoku, T. Shirai, M. Akita, A. Seki, H. Saito, S. Harada, T. Ujihara

Mater. Sci. Forum   Vol. 924   page： 39-42   2018

Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method Reviewed

K. Murayama, S. Harada, F. Fujie, X. Liu, R. Murai, C. Zhu, K. Hanada, M. Tagawa, T. Ujihara

Mater. Sci. Forum   Vol. 924   page： 60-63   2018

Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation Reviewed

F. Fujie, S. Harada, H. Koizumi, K. Murayama, K. Hanada, M. Tagawa, T. Ujihara

Appl. Phys. Lett   Vol. 113   page： 012101   2018

Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M.Shimizu, S. Harada, M. Tagawa, T. Ujihara

Appl. Phys. Express   Vol. 11   page： 111001   2018

Improvement mechanism of sputtered AlN films by high-temperature annealing Reviewed

S. Xiao, R. Suzuki, H. Miyake, S. Harada, T. Ujihara

J. Cryst. Growth   Vol. 502   page： 41-44   2018

High-speed prediction of computational fluid dynamics simulation in crystal growth Reviewed

Y. Tsunooka, N. Kokubo, G. Hatasa, S. Harada, M. Tagawa, T. Ujihara

CrystEngComm   Vol. 20   page： 6546 - 6550   2018

Importance of Hydration State around Proteins Required to Grow High-Quality Protein Crystals Reviewed

H. Koizumi, S. Uda, K. Tsukamoto, K. Kojima, M. Tachibana, T. Ujihara

Cryst. Growth Des   Vol. 18   page： 4749-4755   2018

Coherent pulse beam in spin-polarized TEM using an NEA photocathode Reviewed

Kuwahara M., Ujihara T., Saitoh K., Tanaka N.

2018 31ST INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC)     page： .   2018

Temperature dependence of carrier relaxation time in gallium phosphide evaluated by photoemission measurements

Ichihashi Fumiaki, Kawaguchi Takahiko, Dong Xinyu, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Toru

AIP ADVANCES   Vol. 7 ( 11 )   2017.11

Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method Reviewed

Yamamoto Takuya, Adkar Nikhil, Okano Yasunori, Ujihara Toru, Dost Sadik

JOURNAL OF CRYSTAL GROWTH   Vol. 474   page： 50-54   2017.9

Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation Reviewed

Yamamoto Takuya, Okano Yasunori, Ujihara Toru, Dost Sadik

JOURNAL OF CRYSTAL GROWTH   Vol. 470   page： 75-88   2017.7

Morphology of AlN whiskers grown by reacting N-2 gas and Al vapor

Matsumoto M., Saitou H., Takeuchi Y., Harada S., Tagawa M., Ujihara T.

JOURNAL OF CRYSTAL GROWTH   Vol. 468   page： 576-580   2017.6

Two-step SiC solution growth for dislocation reduction

Murayama K., Hori T., Harada S., Xiao S., Tagawa M., Ujihara T.

JOURNAL OF CRYSTAL GROWTH   Vol. 468   page： 874-878   2017.6

Phase transition process in DDAB supported lipid bilayer Reviewed

Isogai Takumi, Nakada Sakiko, Yoshida Naoya, Sumi Hayato, Tero Ryugo, Harada Shunta, Ujihara Toru, Tagawa Miho

JOURNAL OF CRYSTAL GROWTH   Vol. 468   page： 88-92   2017.6

SiC solution growth on Si face with extremely low density of threading screw dislocations for suppression of polytype transformation Reviewed

K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara

Mater. Sci. Forum   Vol. 897   page： 24-27   2017.5

Solvent design for high-purity SiC solution growth Reviewed

S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara

Mater. Sci. Forum   Vol. 897   page： 32-35   2017.5

Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth Reviewed

T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara

Mater. Sci. Forum   Vol. 897   page： 28-31   2017.5

Crystal Orientation Dependence of Precipitate Structure of Electrodeposited Li Metal on Cu Current Collectors Reviewed

Ishikawa Kohei, Ito Yasumasa, Harada Shunta, Tagawa Miho, Ujihara Toru

CRYSTAL GROWTH & DESIGN   Vol. 17 ( 5 ) page： 2379-2385   2017.5

Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaCIO3 Unsaturated Mother Solution Reviewed

Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Maruyama Mihoko, Ujihara Toru, Omatsu Takashige, Mori Yusuke

CRYSTAL GROWTH & DESIGN   Vol. 17 ( 2 ) page： 809-818   2017.2

Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents Reviewed

Komatsu Naoyoshi, Mitani Takeshi, Hayashi Yuichiro, Kato Tomohisa, Harada Shunta, Ujihara Toru, Okumura Hajime

JOURNAL OF CRYSTAL GROWTH   Vol. 458   page： 37-43   2017.1

Phase transition process in DDAB supported lipid bilayer

"T. Isogai, S. Nakada, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa"

J. Cryst. Growth   Vol. 468   page： 88-92   2017

Septin Interferes with the Temperature-Dependent Domain Formation and Disappearance of Lipid Bilayer Membranes Reviewed

S. Yamada, T. Isogai, R. Tero, Y. Tanaka-Takiguchi, T. Ujihara, M. Kinoshita, K. Takiguchi

Langmuir     page： 12823–12832   2016.11

Conversion behavior of threading screw dislocations on C face with different surface morphology during 4H-SiC solution growth Reviewed

S. Xiao, S. Harada, K. Murayama, M. Tagawa, T. Ujihara

Cryst. Growth Des.     page： 6436–6439   2016.10

Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO 3 solution containing Ag nanoparticles Reviewed

H. Niinomi, T. Sugiyama, M. Tagawa, K. Murayama, S. Harada, T. Ujihara

CrystEngComm   Vol. 18 ( 39 ) page： 7441-7448   2016.7

Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis

"S. Xiao, S. Harada, K. Murayama, T. Ujihara"

Cryst. Growth Des.   Vol. 16 ( 9 ) page： 5136-5140   2016.7

Effect of magnesium ion concentration on two-dimensional structure of DNA-functionalized nanoparticles on supported lipid bilayer Reviewed

T. Isogai, E. Akada, S. Nakada, N. Yoshida, R. Tero, S. Harada, T. Ujihara, M. Tagawa

Japanese Journal of Applied Physics   Vol. 55 ( 3S2 ) page： 03DF11   2016.3

The Boersch effect in a picosecond pulsed electron beam emitted from a semiconductor photocathode Reviewed

Makoto Kuwahara, Yoshito Nambo, Kota Aoki, Kensuke Sameshima, Xiuguang Jin, Toru Ujihara, Hidefumi Asano, Koh Saitoh, Yoshikazu Takeda and Nobuo Tanaka

Appl. Phys. Lett.   Vol. 109   page： 013108   2016

Spatial Distribution of Carrier Concentration in 4H-SiC Crystal Grown by Solution Method Reviewed

Z. Wang, T. Kawaguchi, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Kato, T. Ujihara

Mater. Sci. Forum,   Vol. 858   page： 57-60   2016

High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent Reviewed

S. Watanabe, M. Nagaya, Y. Takeuchi, K. Aoyagi, K. Aoyagi, S. Harada, M. Tagawa, T. Ujihara

Mater. Sci. Forum,   Vol. 858   page： 1210-1213   2016

Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaClO3 Unsaturated Mother Solution Reviewed

H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, T. Ujihara, T.Omatsu, Y. Mori

Cryst. Growth Des.     2016

Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO3 solution containing Ag nanoparticles Reviewed

H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, S. Harada, T. Ujihara

CrystEngComm   Vol. 18   page： 7441-7448   2016

Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents Reviewed

A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara

Jpn. J. Appl. Phys   Vol. 55   page： 01AC01   2016

Morphology of AlN whiskers grown by reacting N 2 gas and Al vapor Reviewed

M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara

J. Cryst. Growth     2016

Analysis of the carbon transport near the growth interface with respect to the rotational speed of the seed crystal during top-seeded solution growth of SiC Reviewed

T. Umezaki, D. Koike, S. Harada, T. Ujihara

Japanese Journal of Applied Physics   Vol. 55 ( 12 ) page： 125601   2016

Two-step SiC solution growth for dislocation reduction

"K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara"

J. Cryst. Growth     2016

Research on solvent composition for different surface morphology on C face during 4H-SiC solution growth Reviewed

Shiyu Xiao, Natsumi Hara, Shunta Harada, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai and Toru Ujihara

Materials Science Forum   Vol. 821-823   page： 39-42   2015

Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-axis Seeds Reviewed

Tomonori Umezaki, Daiki Koike, Shunta Harada and Toru Ujihara

Materials Science Forum   Vol. 821-823   page： 31-34   2015

Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC Reviewed

Kuniharu Fujii, Koichi Takei, Masahiro Aoshima, Nachimuthu Senguttuvan, Masahiko Hiratani, Toru Ujihara, Yuji Matsumoto, Tomohisa Kato, Kazuhisa Kurashige and Hajime Okumura

Materials Science Forum   Vol. 821-823   page： 35-38   2015

3C-SiC Crystal on Sapphire by Solution Growth Method Reviewed

Kenji Shibata, Shunta Harada and Toru Ujihara

Materials Science Forum   Vol. 821-823   page： 185-188   2015

4H-SiC Growth from Si-Cr-C Solution under Al and N Co-doping Conditions Reviewed

Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, and Hajime Okumura

Mater. Sci. Forum,   Vol. 821-823   page： 9-13   2015

Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent Reviewed

Naoyoshi Komatsu, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, and Hajime Okumura

Materials Science Forum   Vol. 821-823   page： 14-17   2015

バルク結晶成長のこの10年

宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志

JOURNAL OF THE JAPANESE ASSOCIATION FOR CRYSTAL GROWTH(日本結晶成長学会誌)   Vol. 42 ( 1 ) page： pp.64-68   2015

Non-uniform electrodeposition of zinc on the (0001) plane Reviewed

T. Mitsuhashi, Y. Ito, Y. Takeuchi, S. Harada, T. Ujihara

Thin Solid Films   Vol. 590   page： pp. 207-213   2015

Dislocation Conversion during SiC Solution Growth for High-quality Crystals Reviewed

S. Harada, Y. Yamamoto, S. Xiao, D. Koike, T. Mutoh, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara

  Vol. 821-823   page： pp. 3-8   2015

Control of interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal Reviewed

D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Ujihara

  Vol. 821-823   page： pp. 18-21   2015

"Effect of forced convection by crucible design in solution growth of SiC single crystal" Reviewed

K. Kurashige, M. Aoshima, K. Takei, K. Fujii, M. Hiratani, N. Senguttuvan, T. Kato, T. Ujihara, Y. Matsumoto, H. Okumura

  Vol. 821-823   page： pp. 22-25   2015

Effect of aluminum addition on the surface step morphology of 4H SiC grown from Si-Cr-C solution

T. Mitani, N. Komatsu, T. Takahashi, T. Kato, S. Harada, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura

J. Cryst. Growth   Vol. 423   page： 45-49   2015

"Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers" Reviewed

Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa

Journal of Crystal Growth   Vol. 401   page： 494-498   2014.9

"Growth rate and surface morphology of 4H SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions" Reviewed

Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Kuniharu Fujii, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura

Journal of Crystal Growth   Vol. 401   page： 681-685   2014.9

"Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique" Reviewed

Kazuhiko Kusunoki, Nobuhiro Okada, Kazuhito Kamei, Koji Moriguchi, Hironori Daikoku, Motohisa Kado, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara

Journal of Crystal Growth   Vol. 395   page： 68-73   2014.6

"Emregence and Amplification of Chirality via Achiral-Chiral Polymorphic Transformation in Sodium Chlorate Solution Growth" Reviewed

Hiromasa Niinomi, Hitoshi Miura, Yuki Kimura, Makio Uwaha, Hiroyasu Katsuno, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto

Crystal Growth and Design   Vol. 14 ( 7 ) page： 3596-3602   2014.6

"Solubility measurement of a metastable achiral crystal of sodium chlorate in solution growth" Reviewed

Hiromasa Niinomi, Atsushi Horio, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Katsuo Tsukamoto

Journal of Crystal Growth   Vol. 394   page： 106-111   2014.5

"Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method" Reviewed

Yuji Yamamoto, Shunta Harada, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Daiki Koike, Miho Tagawa, and Toru Ujihara

Applied Physics Express   Vol. 7   page： 065501   2014.5

"Nitrogen doping of 4H- SiC by the top-seeded solution growth technique using Si-Ti solvent" Reviewed

Kazuhiko Kusunoki, Kazuhito Kamei, Kazuaki Seki, Shunta Harada, Toru Ujihara

Journal of Crystal Growth   Vol. 392   page： 60-65   2014.4

"The strain effect on the superconducting properties of BaFe2(As, P)2 thin films grown by molecular beam epitaxy" Reviewed

T. Kawaguchi, A. Sakagami, Y. Mori, M. Tabuchi, T. Ujihara, Y. Takeda, and H. Ikuta

Superconductor Science and Technology   Vol. 27   page： 065005 (6pp)   2014.4

"Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents" Reviewed

Kazuhiko Kusunoki, Kazuhito Kamei, Nobuhiro Okada, Koji Moriguchi, Hiroshi Kaido, Hironori Daikoku, Motohisa Kado, Katsunori Danno, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara

Materials Science Forum   Vol. 778-780   page： Pages 79-82   2014.2

"Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC" Reviewed

Tomonori Umezaki, Daiki Koike, Atsushi Horio, Shunta Harada, Toru Ujihara

Materials Science Forum   Vol. 778-780   page： 63-66   2014.2

"Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent" Reviewed

Shunta Harada, Yuji Yamamoto, Shi Yu Xiao, Miho Tagawa, Toru Ujihara

Materials Science Forum   Vol. 778-780   page： 67-70   2014.2

"Growth of a smooth CaF2 layer on NdFeAsO thin film" Reviewed

N. Sumiya, T. Kawaguchi, M. Chihara, M. Tabuchi, T. Ujihara, A. Ichinose, I. Tsukada and H. Ikuta

Journal of Physics: Conference Series   Vol. 507 ( 1 ) page： 012047   2014

"Coherence of a spin-polarized electron beam emitted from a semiconductor photocathode in a transmission electron microscope" Reviewed

Makoto Kuwahara, Soichiro Kusunoki, Yoshito Nambo, Koh Saitoh, Xiuguang Jin, Toru Ujihara, Hidefumi Asano, Yoshikazu Takeda and Nobuo Tanaka

Appl. Phys. Lett.   Vol. 105 ( 193101 )   2014

Direct measurement of conduction miniband structure in superlattice by visible-light photoemission spectroscopy

F. Ichihashi, D. Shimura, K. Nishitani, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, H. Katsuno, M. Tagawa, T.Ujihara

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th     page： 2882-2885   2014

"Critical current density and grain boundary property of BaFe2(As,P)2 thin films" Reviewed

A. Sakagami, T. Kawaguchi, M. Tabuchi, T. Ujihara, Y. Takeda, H. Ikuta

Physica C: Superconductivity,Proceedings of the 25th International Symposium on Superconductivity (ISS 2012) Advances in Superconductivity XXV   Vol. 494   page： 181–184   2013.11

Phase-locking of oscillating images using laser-induced spin-polarized pulse TEM Reviewed

Makoto Kuwahara,Yoshito Nambo, Soichiro Kusunoki, Xiuguang Jin, Koh Saitoh, Hidefumi Asano, Toru Ujihara, Yoshikazu Takeda, Tsutomu Nakanishi and Nobuo Tanaka

Microscopy Advance Access     page： pp.1-8   2013.6

"Influence of Solution Flow on Step Bunching in Solution Growth of SiC Crystals" Reviewed

Can Zhu, Shunta Harada, Kazuaki Seki, Huayu Zhang, Hiromasa Niinomi, Miho Tagawa, and Toru Ujihara

Cryst. Growth Des.   Vol. 13 ( (8) ) page： 3691-3696   2013.6

"Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth" Reviewed

Materials Science Forum   Vol. 740-742   page： pp.15-18   2013.1

"Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC" Reviewed

Materials Science Forum   Vol. 740-742   page： 189-192   2013.1

"Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method" Reviewed

Materials Science Forum   Vol. 740-742   page： pp.311-314   2013.1

Direct Growth of AlN Single Crystal on Sapphire by Solution Growth Method Reviewed

H. Matsubara, K. Mizuno, Y. Takeuchi, S. Harada, Y. Kitou, E. Okuno, and T. Ujihara,

  Vol. 52   page： 08JE17 (4 pages).   2013

"Evolution of threading screw dislocation conversion during solution growth of 4H-SiC" Reviewed

S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, M. Tagawa, and T. Ujihara

APL Mater.   Vol. 1 ( 2 ) page： 022109 (7 pages)   2013

超高品質SiC溶液成長 Reviewed

宇治原徹,　原田俊太,　山本祐治, 関和明

応用物理   Vol. 82 ( 4 ) page： 326-329   2013

"Achiral Metastable Crystals of Sodium Chlorate Forming Prior to Chiral Crystals in Solution Growth" Reviewed

Hiromasa Niinomi, Tomoya Yamazaki, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Takahiro Kuribayashi, Makio Uwaha, and Katsuo Tsukamoto

Cryst. Growth Des.   Vol. 13 ( 12 ) page： pp.5188-5192   2013

SiC 結晶成長における多形制御 ～速度論的多形制御法の提案（3C-SiC 溶液成長を例に）～ Reviewed

関 和明、原田 俊太、宇治原　徹

日本結晶成長学会誌   Vol. 40 ( 4 ) page： 253-260   2013

SiC溶液成長の最近の展開 Reviewed

原田 俊太、山本 祐治、関 和明、宇治原 徹

日本結晶成長学会誌   Vol. 40   page： 25-32   2013

“Polytype-selective growth of SiC by supersaturation control in solution growth Original Research Article” Reviewed

Journal of Crystal Growth   Vol. 360   page： 176-180.   2012.12

Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation Reviewed

Xiuguang Jin, Hirotaka Nakahara, Koh Saitoh, Takashi Saka, Toru Ujihara, Nobuo Tanaka, Yoshikazu Takeda

Journal of Crystal Growth   Vol. 353 ( 1 ) page： 84-87   2012.8

Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth Reviewed

Toru Ujihara, Shigeta Kozawa, Kazuaki Seki, Alexander, Yuji Yamamoto, Shunta Harada

Materials Science Forum   Vol. 717–720   page： 351-354   2012.5

Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth Reviewed

Yuji Yamamoto, Kazuaki Seki, Shigeta Kozawa, Alexander, Shunta Harada, Toru Ujihara

Materials Science Forum   Vol. 717–720   page： 53-56   2012.5

Substrate dependence of the superconducting properties of NdFeAs(O,F) thin films Reviewed

Hiroki Uemura, Takahiko Kawaguchi, Toshiya Ohno, Masao Tabuchi, Toru Ujihara, Yoshikazu Takeda, Hiroshi Ikuta

Solid State Communications   Vol. 152 ( 8 ) page： 735-739   2012.4

30-kV spin-polarized transmission electron microscope with GaAs-GaAsP strained superlattice photocathode Reviewed

M. Kuwahara, S. Kusunoki, X. G. Jin, T. Nakanishi, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, and N. Tanaka

Appl. Phys. Lett.   Vol. 101   page： 033102   2012

Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth Reviewed

Shunta Harada, Alexander, Kazuaki Seki, Yuji Yamamoto, Can Zhu, Yuta Yamamoto, Shigeo Arai, Jun Yamasaki, Nobuo Tanaka, and Toru Ujihara

Crystal Growth & Design   Vol. 12 ( (6) ) page： 3209-3214   2012

“High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth” Reviewed

  Vol. 5   page： 115501 (3 pages).   2012

“Development of Spin-Polarized and Pulsed TEM “ Reviewed

  Vol. 371   page： 012004   2012

Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system Reviewed

Kazuaki Seki, Alexander, Shigeta Kozawa, Toru Ujihara, Patrick Chaudouët, Didier Chaussende, Yoshikazu Takeda

Journal of Crystal Growth   Vol. 335 ( 1 ) page： 94-99   2011.11

Anomalous Diffusion in Supported Lipid Bilayers Induced by Oxide Surface Nanostructures Reviewed

Ryugo Tero, Gen Sazaki, Toru Ujihara, and Tsuneo Urisu

  Vol. 27   page： 9662-9665   2011

Development of spin-polarized transmission electron microscope Reviewed

M. Kuwahara, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, T. Nakanishi and N Tanaka

  Vol. 298   page： 012016   2011

Polytype stability of 4H-SiC seed crystal on solution growth Reviewed

Alexander, K. Seki, S. Kozawa, Y. Yamamoto, T. Ujihara and Y. Takeda

Materials Science Forum   Vol. 679-680   page： pp 24-27   2011

Defect evaluation of SiC crystal grown by solution method: the study by synchrotron X-ray topography and etching method Reviewed

S. Kozawa, K. Seki, Alexander, Y. Yamamoto, T. Ujihara and Y. Takeda

Materials Science Forum   Vol. 679-680   page： pp 28-31   2011

Increase of spectral width of stacked InAs quantum dots on GaAs by controlling spacer layer thickness. Reviewed

Kazuma Tani, Shingo Fuchi, Ryota Mizutani, Toru Ujihara, Yoshikazu Takeda

Journal of Crystal Growth   Vol. 318   page： pp 1113-1116   2011

High-quality and large-area 3C-SiC growth on 6H-SiC(0 0 0 1) seed crystal with top-seeded solution method. Reviewed

Toru Ujihara, Kazuaki Seki, Ryo Tanaka, Shigeta Kozawa, Alexander, Kai Morimoto, Katsuhiro Sasaki, Yoshikazu Takeda

Journal of Crystal Growth   Vol. 318   page： pp 389-393.   2011

Molecular Beam Epitaxy Growth of Superconducting NdFeAs(O,F) Thin Films Using a F-Getter and a Novel F-Doping Method Reviewed

Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno, Masao Tabuchi, Toru Ujihara, Yoshikazu Takeda and Hiroshi Ikuta

Appl. Phys. Express   Vol. 4   page： 083102 (3 pages)   2011

Epitaxial growth of LaFeAs(O,F) thin films by molecular beam epitaxy Reviewed

T. Kawaguchi , H. Uemura , T. Ohno , M. Tabuchi , T. Ujihara , K. Takenaka , Y. Takeda , H. Ikuta

Physica C: Superconductivity   Vol. Volume 471 ( Issues 21-22 ) page： pp. 1174-1176   2011

Status of the high brightness polarized electron source using transmission photocathode

N. Yamamoto, X.G.Jin, A. Mano, T. Ujihara, Y. Takeda, S. Okumi, T. Nakanishi, T. Yasue, T. Koshikawa, T.Oshima, T. Saka and H. Horinaka,

  Vol. 298   page： 012017   2011

Strain of GaAs/GaAsP superlattices used as spin-polarized electron photocathodes, determined by X-ray diffraction Reviewed

T. Saka, Y. Ishida, M. Kanda, X.G. Jin, Y. Maeda, S. Fuchi, T. Ujihara, Y. Takeda, T. Matsuyama, H. Horinaka, T. Kato, N. Yamamoto, A. Mano, Y. Nakagawa, M. Kuwahara, S. Okumi, T. Nakanishi, M. Yamamoto, T. Ohshima, T. Kohashi, M. Suzuki, M. Hashimoto, T. Yasue, T. Koshikawa

-Journal of Surface Science and Nanotechnology   Vol. 8   page： 125-130   2010

Stacking Faults around the hetero-interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth Reviewed

K. Seki, K. Morimoto, T. Ujihara, T. Tokunaga, K. Sasaki, K. Kuroda, and Y. Takeda

Mater. Sci. Forum   Vol. 645-648   page： 363-366   2010

Real time magnetic imaging by spin-polarized low energy electron microscopy with highly spin-polarized and high brightness electron gun Reviewed

M. Suzuki, M. Hashimoto, T. Yasue, T. Koshikawa, Y. Nakagawa, T. Konomi, A. Mano, N. Yamamoto, M. Kuwahara, M. Yamamoto, S. Okumi, T. Nakanishi, X.G. Jin, T. Ujihara, Y. Takeda, T. Kohashi, T. Ohshima, T. Saka, T. Kato, and H. Horinaka

Appl. Phys. Express   Vol. 3   page： 026601   2010

Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices. Reviewed

X.G. Jin, Y. Maeda, T. Sasaki, S. Arai, Y. Ishida, M. Kanda, S. Fuchi, T. Ujihara, T. Saka, and Y. Takeda

J. Appl. Phys.   Vol. 108 ( 9 ) page： 094509 - 094509-6   2010

TEM analysis of SiC crystal grown on (001) 3C-SiC CVD substrate by solution growth Reviewed

K. Morimoto, R.Tanaka, K. Seki, T. Tokunaga, T. Ujihara, K. Sasaki, Y. Takeda, K. Kuroda

International Journal of Advanced Microscopy and Theoretical Calculations   Vol. Letters 2   page： pp 242-243   2010

In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy Reviewed

T. Kawaguchi, H. Uemura, T. Ohno, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, and H. Ikuta

Appl. Phys. Lett.   Vol. 97 ( 4 ) page： 042509   2010

High Temperature Solution Growth on Free-standing (001)3C-SiC Epilayers Reviewed

R. Tanaka, K. Seki, T. Ujihara, Y. Takeda

Mater. Sci Forum   Vol. 615-617   page： 37-40   2009

High Brightness and High Polarization Electron Source Using Transmission Photocathode Reviewed

N. Yamamoto, X. Jin, A. Mano, Y. Nakagawa, T. Nakanishi, T. Ujihara, S. Okumi, M. Yamamoto, T. Konomi, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa

AIP Proceedings   Vol. 1149   page： 1052-1056   2009

Status of 200keV Beam Operations at Nagoya University Reviewed

M. Yamamoto, T. Konomi, S. Okumi, Y. Nakagawa, N. Yamamoto, M.Tanioku, X. Jin, T. Ujihara, Y. Takeda, F. Fukuta, H. Matsumoto

AIP Proceedings   Vol. 1149   page： 987-991   2009

Shape transformation of adsorbed vesicles on oxide surfaces: Effect of substrate material and photo-irradiation Reviewed

R. Tero, T. Ujihara and T. Urisu

Trans. Mater. Res. Soc. Jpn.   Vol. 34 ( 2 ) page： 183-188   2009

Effects of Applied Voltage on the Size of Phase-Separated Domains in DMPS-DOPC Lipid Binary Bilayers Supported on SiO2/Si Substrates Reviewed

Y. Yamauchi, T. Ujihara, R. Tero and Y. Takeda

Trans. Mater. Res. Soc. Jpn.   Vol. 34 ( 2 ) page： 217-220   2009

Local Condensation of Artificial Raft Domains under Light Irradiation in Supported Lipid Bilayer of PSM-DOPC-Cholesterol System Reviewed

T. Ujihara, S. Suzuki, Y. Yamauchi, R. Tero and Y. Takeda

Trans. Mater. Res. Soc. Jpn.   Vol. 34 ( 2 ) page： 179-182   2009

次世代のＳｉＣ高品質基板結晶作製技術　溶液法によりマイクロパイプ・基底面転位を低減　産学の連携を深め、実用化をめざす

宇治原徹, 竹田美和

Semiconductor FPD World   Vol. 11   page： 55-58   2009

ＳｉＣ単結晶の溶液成長

宇治原徹

Materials Stage   Vol. 9   page： 46-49   2009

Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy Reviewed

Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno, Ryotaro Watanabe, Masao Tabuchi, Toru Ujihara, Koshi Takenaka, Yoshikazu Takeda, and Hiroshi Ikuta

Applied Physics Express   Vol. 2   page： 093002   2009

Anisotropy of mosaic structure of GaAsP layers grown on GaAs substrates Reviewed

T. Saka, T. Kato, X.G. Jin, M. Tanioku, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Matsuyama, T. Yasue, and T. Koshikawa

Phys. Status Solidi   Vol. 8   page： 1785   2009

*Stability Growth Condition for 3C-SiC Crystals by Solution Technique Reviewed

T. Ujiahra, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda, Y. Takeda,

Mater. Sci Forum   Vol. 600-603   page： 63-66   2009

Low temperature solution growth of 3C-SiC crystals in Si-Ge-Ti solvent Reviewed

R. Tanaka, T. Ujihara, Y. Takeda,

Mater. Sci Forum   Vol. 600-603   page： 59-62   2009

Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method Reviewed

K. Seki, R. Tanaka, T. Ujihara, Y. Takeda,

Mater. Sci Forum   Vol. 615-617   page： 27-30   2009

Study of minority carrier diffusion length in multicrystalline silicon solar cells using photoassisted Kelvin probe force microscopy Reviewed

Masaki Takihara, Takuji Takahashi, Toru Ujihara

Appl. Phys. Lett.   Vol. 95   page： 19   2009

High brightness and high polarization electron source using transmission photocathode with GaAs-GaAsP superlattice layers Reviewed

N. Yamamoto, Y. Nakanishi, A. Mano, Y. Nakagawa, S. Okumi, M. Yamamoto, T. Konomi, X. G. Jin, T. Ujihara, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa, M. Kuwahara

J. Appl. Phys.   Vol. 103   page： 64905   2008

Effects of absorbed group-V atoms on the size distribution and optical properties of InAsP quantum dots fabricated by the droplet hetero-epitaxy Reviewed

S. Fuchi, S. Miyake, S. Kawamura, W.S. Lee, T. Ujihara, Y. Takeda

J. Crystal Gorwth   Vol. 310   page： 2239-2243   2008

*Solution growth of high-quality 3C-SiC crystals Reviewed

T. Ujihara, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda, and Y. Takeda

J. Crystal Gorwth   Vol. 310   page： 1438-1442   2008

*Super-high brightness spin-polarized transmission photocathode based on GaAs-GaAsP strained superlattice structure on GaP substrate Reviewed

X.G. Jin, N. Yamamoto,Y. Nakagawa, A. Mano, T. Kato, M. Tanioku, T. Ujihara, Y. Takeda, S. Okumi, M. Yamamoto, T. Nakanishi11, T. Saka, H. Horinaka, T. Yasue, and T. Koshikawa

Appl. Phys. Express   Vol. 1   page： 45002   2008

" 歪み超格子スピン偏極電子源構造におけるバッファ層歪み緩和過程と偏極度の関係,"

"前多悠也, 金秀光, 谷奥雅俊, 渕真悟, 宇治原徹, 竹田美和, 山本尚人,中川靖英, 山本将博, 奥見正治, 中西彊, 坂貴, 堀中博道, 加藤俊宏, 安江常夫, 越川孝範"

信学技報   Vol. 108   page： 75-84   2008

固体表面物性がサポーティッドメンブレンの形成過程と構造に及ぼす影響 Reviewed

手老龍吾, 宇治原徹, 宇理須恒雄,

表面 HYOMEN(SURFACE)   Vol. 46   page： 287-299   2008

Minority Carrier Lifetime in Polycrystalline Silicon Solar Cells Studied by Phot-assisted Kelvin Probe Force Microscopy Reviewed

M. Takihara, T. Ujihara, T. Takahashi

Appl. Phys. Lett.   Vol. 93   page： 021902   2008

Local concentration of gel phase domains in supported lipid bilayers under light irradiation in binary mixture of phospholipids doped with dyes for photoinduced activation Reviewed

T. Ujihara, S. Suzuki, Y. Yamauchi, R. Tero, Y. Takeda,

Langmuir   Vol. 24   page： 10974-10980   2008

Lipid Bilayer Membrane with Atomic Step Structure:Supported Bilayer on Step-and-Terrace TiO2(100) Surface Reviewed

R. Tero, T. Ujihara, T. Urisu,

Langmuir   Vol. 24   page： 11567-11576   2008

Highly spin-polarized electron photocathode based on GaAs-GaAsP superlattice grown on mosaic-structured buffer layer Reviewed

X.G. Jin, Y. Maeda, T. Saka, M. Tanioku, S. Fuchi, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Kato, T. Yasue, and T. Koshikawa

J. Crystal Gorwth   Vol. 310   page： 5039-5043   2008

Supported lipid bilayer membranes on SiO2 and TiO2: substrate effects on membrane formation and shape transformation Reviewed

R. Tero, T. Ujihara, T. Urisu

Proceedings of SPIE   Vol. 6769   page： 1-12   2007

"歪み補償型GaAs/GaAsP超格子偏極電子源の特性向上,"

加藤鷹紀, 酒井良介, 谷奥雅俊, 中川靖英, 前田義紀, 金秀光, 渕真悟, 山本将博, 宇治原徹, 中西 彊, 竹田美和

信学技報   Vol. 107   page： 109-114   2007

生体膜における相分離構造に関する研究

宇治原徹

まてりあ   Vol. 46   page： 433   2007

Photovoltage mapping on polycrystalline silicon solar cells by Kelvin probe force microscopy with piezoresistive cantilever Reviewed

M. Takihara, T. Igarashi, T. Ujihara and T. Takahashi

Jpn. J. Appl. Phys. Part 1   Vol. 46   page： 5548-5551   2007

Thermal emittance measurements for electron beams produced from bulk and superlattice negative electron affinity photocathods Reviewed

N. Yamamoto, M. Yamamoto, M. Kuwahara, R. Sakai, T. Morino, K. Tamagaki, A. Mano, A. Utsu, S. Okumi, T. Nakanishi, M. Kuriki, C. Bo, T. Ujihara and Y. Takeda

J. Appl. Phys.   Vol. 102   page： 24904   2007

"Effect of Li doping on photoluminescence from Er, O-codoped GaAs" Reviewed

D. Uki, H. Ohnishi, T. Yamaguchi, Y. Takemori, A. Koizumi, S. Fuchi, T. Ujihara and Y. Takeda

J. Crystal Growth   Vol. 298   page： 69-72   2007

" Er,O共添加GaAsを有する分離閉じ込め構造による1.5μm帯の電流注入による発光強度の増大,"

宇木大輔, 山口岳宏, 田中雄太, 渕真悟, 宇治原徹, 竹田美和

信学技報   Vol. 107   page： 29-34   2007

Size uniformity of InAs dots on mesa-structure templates on (001) InP substrates grown by droplet metal-organic vapor phase epitaxy method Reviewed

"T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda"

Appl. Phys. Lett.   Vol. 89   page： 083110   2006

GaAs/GaAsP歪み超格子偏極電子源の結晶性改善による高性能化

宇治原徹, 陳　博,　安井健一,　酒井良介、山本将博、中西　彊、竹田美和

信学技報   Vol. 106   page： 79-84   2006

"Growth of SiC single crystal from Si-C-(Co, Fe) ternary solution" Reviewed

Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara and Kazuo Nakajima

Mater. Sci Forum   Vol. 527-529   page： 115-118   2006

Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique Reviewed

K. Kusunoki, K. Kamei, N. Okada, N. Yashiro, A. Yauchi, T. Ujihara, and K. Nakajima

Mater. Sci Forum   Vol. 527-529   page： 119-122   2006

分散量子ドット構造を利用した広帯域発光素子 Reviewed

李祐植, 三宅信輔, 渕真悟, 宇治原徹, 竹田美和

日本結晶成長学会誌   Vol. 33   page： 106-110   2006

Photovoltage Mapping on Polycrystalline Silicon Solar Cells through Potential Measurements by AFM with Piezo-resistive Cantilever Reviewed

T. Igarashi, T. Ujihara, T. Takahashi

Jpn. J. Appl. Phys. Part 1   Vol. 45   page： 2128-2131   2006

Evaluation of Strain Field around SiC Particle in Poly-Crystalline Silicon

"T. Ujihara, T. Ichitsubo, N. Usami, K. Nakajima, Y. Takeda,"

Proc. IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC4)     page： 272   2006

The wideband light emission around 800 nm from ternary InAsP quantum dots with an intentionally broadened size and composition distribution Reviewed

S. Miyake, W. S. Lee, T. Ujihara and Y. Takeda

    page： p. 208-210   2006

Pattern size effect on source supply process for sub-micrometer scale selective-area-growth by organometallic vapor phase epitaxy Reviewed

T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda

J. Crystal Growth   Vol. 289   page： 89-95   2006

Crystal quality of a 6H-SiC layer grown over macro-defects by liquid phase epitaxy: a Raman spectroscopic study Reviewed

T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima

Thin Solid Films   Vol. 476   page： 206-209   2005

太陽電池用Si系バルク多結晶の結晶成長及び太陽電池特性　―多結晶Siの融液成長のその場観察とバルク多結晶SiGeの特性評価― Reviewed

藤原航三, 宇佐美徳隆, 藩伍根, 宇治原徹, 野村明子, 野瀬嘉太郎, 宍戸統悦, 中嶋一雄

日本結晶成長学会誌   Vol. 32   page： 291-296   2005

Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent Reviewed

Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima, and T. Ujihara

J. Appl. Phys.   Vol. 98   page： 073708   2005

メサ構造ＩｎＰテンプレート基板へのＩｎＡｓ量子ドットの成長とサイズ制御

宇治原 徹, 吉田義浩,　李祐植,　竹田美和

信学技報   Vol. 105   page： 23-26   2005

Structural properties of directionally grown polycrystalline SiGe for solar cells Reviewed

K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima

J.Cryst.Growth.   Vol. 275   page： 467-473   2005

Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams Reviewed

K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki

International Journal of Material & Product Technology.   Vol. 22   page： 185-212   2005

"Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate" Reviewed

G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima

J.Cryst.Growth.   Vol. 273   page： 594-602   2005

A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal Reviewed

Y. Azuma, N, Usami, K, Fujiwara, T, Ujihara and K, Nakajima

J.Cryst.Growth   Vol. 276   page： 393-400   2005

Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution Reviewed

K. Kusunoki, K. Kamei, Y. Ueda, S. Naga, Y. Ito, M. Hasebe, T. Ujihar, K. Nakajima

Mater. Sci Forum   Vol. 483   page： 13-16   2005

Electrical Properties around Grain Boundary of Poly-Crystalline Silicon for Solar Cell Evaluated Using the Conductive AFM

T. Ujihara, K. Nakajima, Y. Takeda

Proc. 15th PVSEC     page： 118-119   2005

Analytical evaluation of growth process in a sub-micron scale selective-area growth by OMVPE Reviewed

Toru Ujihara, Yoshihiro Yoshida, Woo Sik Lee, Ryo Oga, Yoshikazu Takeda

    page： p112   2005

Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer Reviewed

U. Noritaka, K. Kutsukake, W. Pan, K. Fujiwara, T. Ujihara, B. Zhang, T. Yokoyama, K. Nakajima

J. Cryst. Growth   Vol. 275   page： 1203-1207   2005

Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe Reviewed

N. Usami, WG. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K.Nakajima

Jpn. J. Appl. Phys.   Vol. 43   page： L250-L252   2004

Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution Reviewed

W. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima, R. Shimokawa

J. Appl. Phys.   Vol. 96 (2)   page： 1238-1241   2004

Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation Reviewed

Y.Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara, T. Ujihara

Jpn. J. Appl. Phys.   Vol. Feb-46   page： L907   2004

Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate Reviewed

K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa

Appl. Surf. Sci.   Vol. 224   page： 604-607   2004

Effects of growth temperature on the surface morphology of silicon thin-film on (111) silicon monocrystalline substrate grown by liquid phase epitaxy Reviewed

T. Ujihara, E. Kanda, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima

J. Crystal Growth   Vol. 266   page： 467-474   2004

Grain growth behaviors of polycrystalline silicon during melt growth processes Reviewed

K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima

J. Crystal Growth   Vol. 266   page： 441-448   2004

On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates Reviewed

K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, and K. Nakajima

Appl. Phys. Lett.   Vol. 85   page： 1335-1337   2004

SiGeバルク単結晶と多結晶の成長技術およびそれらのデバイス応用 : 均一組成のバルク単結晶とミクロ分散的組成分布を有する太陽電池用バルク多結晶

中嶋一雄, 藤原航三, 宇佐美徳隆, 藩伍根, 佐崎元, 宇治原徹, 宍戸統悦

日本結晶成長学会誌   Vol. 31   page： 29-37   2004

材料工学からの太陽電池研究

宇治原徹

まてりあ   Vol. 43   page： 949-953   2004

Molten metal flux growth and properties of CrSi2 Reviewed

T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima

JOURNAL OF ALLOYS AND COMPOUNDS.   Vol. 383   page： 319-321   2004

Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer Reviewed

"A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y Shiraki"

Appl. Phys. Lett.   Vol. 84   page： 2802-2804   2004

In-situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy Reviewed

G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara, K. Nakajima

J. Crystal Growth   Vol. 262   page： 536-542   2004

Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate Reviewed

G. Sazaki, T. Fujino, J.T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, H. Takahashi, E. Matsubara, T. Sakurai, K. Nakajima

J. Crystal Growth   Vol. 262   page： 196-201   2004

Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime Reviewed

N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima

Thin Solid Films   Vol. 451-452   page： 604-607   2004

In-situ observations of melt growth behavior of polycrystalline silicon Reviewed

K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima

J. Crystal Growth   Vol. 262   page： 124   2004

Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations Reviewed

K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki, and T. Shishido

J. Crystal Growth   Vol. 260   page： 372-383   2004

Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy Reviewed

Toru Ujihara, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, and Kazuo Nakajima

Mater. Sci Forum   Vol. 457-460   page： 633-637   2004

Excellent Effect of Gallium Solvent on Preparation of High Lifetime Silicon Crystal by LPE Method Reviewed

Toru Ujihara, Yusuke Satoh, Kazuo Obara, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Toetsu Shishido and Kazuo Nakajima

    page： ?   2004

TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent Reviewed

K. Kamei, K. Kusunoki, S. Munetoh, T. Ujihara and K. Nakajima

Mater. Sci Forum   Vol. 457-460   page： 347-351   2004

Solution growth of self standing 6H-SiC single crystal using metal solvent Reviewed

K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara and K. Nakajima

Mater. Sci Forum   Vol. 457-460   page： 123-126   2004

Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals Reviewed

Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Ujihara, K. Fujiwara, N. Usami, and K. Nakajima

J. Crystal Growth   Vol. 254   page： 188-195   2003

Hightemperature solution growth and characterization of chromium disilicide Reviewed

T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y.Yokoyama, S. Kohiki , Y. Kawazoe and K. Nakajima

Jpn. J. Appl. Phys.   Vol. 42   page： 7292-7293   2003

Stacked Ge islands for photovoltaic applications Reviewed

N. Usami, A. Alguno, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki

Sci. Tech. Adv. Mat   Vol. 4   page： 367-370   2003

Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature Reviewed

Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima

J. Crystal Growth   Vol. 250   page： 298-304   2003

High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature Reviewed

T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima

Jpn. J. Appl. Phys.   Vol. 42   page： L217-L219   2003

Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix Reviewed

N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki, and K. Nakajima

Journal of Applied Physics   Vol. 94   page： 916-920   2003

Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure Reviewed

A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima

Applied Physics Letters   Vol. 83   page： 1258-1260   2003

Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate Reviewed

K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa

Jpn. J. Appl. Phys.   Vol. 42   page： L232-L234   2003

What is the most important growth parameter on crystal quality of the silicon layer by LPE method? Reviewed

T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima

  ( 2 ) page： 1241 - 1244   2003

Improved quantum efficiency of solar cells with ge dots stacked in multilayer structure Reviewed

A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, K. Sawano*, G. Sazaki, Y. Shiraki* and K. Nakajima

  ( 3 ) page： 2746 - 2749   2003

Spatial distribution of composition and strain in multicrystalline SiGe bulk crystal and their impact on solar cell application Reviewed

N. Usami, T. Takahashi, A. Alguno, K. Fujiwara, T. Ujihara, G. Sazaki, and K. Nakajima

  ( 1 ) page： 98-101   2003

Direct observations of crystal growth from silicon melt Reviewed

K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguti and K.Nakajima

  ( 1 ) page： 110 - 113   2003

Structure and property of directionally grown SiGe multicrystals with microscopic compositional distribution Reviewed

K. Fujiwara, T. Takahashi, N. Usami, T. Ujihara, G. Sazaki and K. Nakajima

  ( 1 ) page： 158 - 160   2003

Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications Reviewed

K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki, and T. Shishido

Sol. Energy Mater. Sol. Cells   Vol. 72   page： 93-100   2002

Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution Reviewed

N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima

J. Appl. Phys.   Vol. 92   page： 7098-7101   2002

Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick's first law Reviewed

T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima

J. Non-Cryst. Solids   Vol. 312-314   page： 196-202   2002

In situ observation of crystal growth behavior from silicon melt Reviewed

K. Fujiwara, Ke. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, K. Nakajima

J. Crystal Growth   Vol. 243   page： 275-282   2002

Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals Reviewed

K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, and T. Shishido

J. Crystal Growth   Vol. 240   page： 370-381   2002

Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells Reviewed

K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido

Sol. Energy Mater. Sol. Cells   Vol. 73   page： 305-320   2002

Evidence for the presence of built-in strain in multicrystalline SiGe with large compositional distribution Reviewed

N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima

Jpn. J. Appl. Phys.   Vol. 41   page： 4462-4465   2002

Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures Reviewed

N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, and K. Nakajima

Mat. Sci. Eng. B   Vol. 89   page： 364-367   2002

In-situ monitoring system of the position and temperature at the crystal-solution interface Reviewed

G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima

J. Crystal Growth   Vol. 236   page： 364-367   2002

Crystal growth of silicon-germanium homogeneous bulk crystal and related measurement

J. Japanese association for crystal growth   Vol. 29 ( 5 ) page： 339   2002

*Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions Reviewed

T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima

J. Crystal Growth   Vol. 242   page： 313-320   2002

New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law Reviewed

T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima

J. Crystal Growth   Vol. 241   page： 387-394   2002

Grain growth of polycrystalline Si thin film for solar cells and its effect on crystal properties Reviewed

Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Yoshihiro Murakami, Kuninori Kitahara and Kazuo Nakajima

    page： 1339-1342   2002

Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution Reviewed

N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, K. Nakajima, and H. Yaguchi

Jpn. J. Appl. Phys.   Vol. 41   page： L37-L39   2002

In-situ observation of the Marangoni convection of a NaCl aqueous solutions under microgravity Reviewed

G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, N. Usami, and K. Nakajima

J. Crystal Growth   Vol. 234   page： 516-522   2002

Effect of growth temperature on surface morphology and crystal quality of Si thin-film by liquid phase epitaxial growth technique Reviewed

Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Noritaka Usami, Gen Sazaki, Kazuo Nakajima

    page： 408-411   2002

Si/multicrystalline-SiGe heterostructure as a candidate for solar cells with high conversion efficiency Reviewed

N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima

    page： 247-249   2002

Assessing composition gradient energy effects due to spin interaction on the spinodal decomposition of Fe-Cr Reviewed

T. Ujihara, K. Osamura

Mater. Sci. Eng. A   Vol. 312   page： 128   2001

Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method Reviewed

N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K.Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa, and S. Kodama

Semicon. Sci. and Technol.   Vol. 16   page： 699-703   2001

Effects of misfit dislocation and AlN buffer layer on the GaInN/GaN phase diagram of the growth modes Reviewed

K. Nakajima, T. Ujihara, and G. Sazaki

J. Appl. Phys.   Vol. 89   page： 146-153   2001

Growth of SixGe1-x (x=0.15) Bulk Crystal with Uniform Composition by Utilizing in situ Monitoring of the Crystal-Solution Interface Reviewed

N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami, and K.Nakajima

Jpn. J. Appl. Phys.   Vol. 44   page： 4141-4144   2001

Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt interface using in-situ monitoring system Reviewed

Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara, and K. Nakajima

J. Crystal Growth   Vol. 224   page： 204-211   2001

Physical model for the evaluation of solid-liquid interfacial tension in silicon Reviewed

T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami, K. Nakajima

J. Appl. Phys.   Vol. 90   page： 750-755   2001

Kinetic analysis of spinodal decomposition process in Fe-Cr alloys by small angle neutron scattering Reviewed

T. Ujihara, K. Osamura

Acta Materialia   Vol. 48   page： 1629-1637   2000

Effects of the dislocation density and surface energy on phase diagrams of the S-K mode for the GaInN/GaN and GaPSb/GaP systems Reviewed

K. Nakajima, T. Ujihara, S. Miyashita, and G. Sazaki

In Mat. Res. Soc. Symp. Proc.   Vol. 618   page： 285-290   2000

"Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies" Reviewed

K. Nakajima, T. Ujihara, G. Sazaki, and N. Usami

J. Crystal Growth   Vol. 220   page： 413-424   2000

SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications Reviewed

N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, Y. Yakabe, T. Kondo, S. Koh, B. Zhang, Y. Segawa,Y. Shiraki, S. Kodama, and K. Nakajima

Appl. Phys. Lett.   Vol. 77   page： 3565-3567   2000

In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry Reviewed

T. Ujihara, G. Sazaki, S. Miyashita, N. Usami, K. Nakajima

Jpn J. Appl. Phys   Vol. 39   page： 5981-5982   2000

Thickness dependence of stable structure of the Stranski-Krastanov mode in the GaPSb/GaP system Reviewed

K. Nakajima, T. Ujihara, S. Miyashita, G. Sazaki

Journal of Crystal Growth   Vol. 209   page： 637-647   2000

"The excess free energy due to composition gradient for ferromagnetic alloys""" Reviewed

T. Ujihara, K. Osamura

Acta Materialia   Vol. 47   page： 3041-3048   1999

Phase diagrams and stable structures for Sranski-Krastanov mode of III-V ternary quantum dots Reviewed

K. Nakajima, T. Ujihara, S. Miyashita and G. Sazaki

Journal of Korean Association of Crystal Growth   Vol. 9   page： 387-395   1999

Magnetic damping of the temperature-driven convection in NaCl aqueous solution using a static and homogenous of 10 T Reviewed

G. Sazaki, S. D. Drubin, S. Miyashita, T. Ujihara, K. Nakajima, M. Motokawa

Jpn. J. Appl. Phys.   Vol. 38   page： L842-L844   1999

Kinetics of Spinodal Decomposition with Composition Dependent Mobility Reviewed

T. Ujihara, K. Osamura

Proceeding of the International Conference on Solid-Solid Phase Transformation   Vol. 99   page： 117-120   1999

Effect of nonlinearity of the evolution equation on the spinodal decomposition process in alloys Reviewed

T. Ujihara, K. Osamura

Physical Review   Vol. B58 ( 17 ) page： 11371   1998

Shape Anisotropy of GP Zone in Early Decomposition Process of Al-Zn Binary Alloy Reviewed

J. Japan Inst. Metals   Vol. 62 ( 2 ) page： 117   1998

Effect of Third Elements on Cu Precipitation on Fe-Cu Alloys Reviewed

Toru Ujihara, Kozo Osamura

Ann. Physiq.   Vol. C3 ( 20 ) page： 3   1995

Phase Decomposition in Fe-Cr-Mo Alloy Reviewed

Kozo Osamura Toru Ujihara, Hiroshi Okuda, Michihiro Furusaka

Proc. Int. Conf. On PTM'94 Solid-Solid Transformation in Inorganic Materials     page： ",377"   1994

「工学的手法による膜制御」, トランスポートソームの世界－膜輸送研究の源流から未来へ－

宇治原徹（ Role： Sole author）

京都廣川書店  2011 

半導体SiC技術と応用　第2版　3.3.2 六方晶基板上への3C-SiC溶液成長

松浪弘之, 大谷昇, 木本恒暢, 中村孝　編著　宇治原徹（ Role： Joint author）

日刊工業新聞社  2011 

SiCパワーデバイスの最新技術, SiCバルク結晶の溶液成長技術

宇治原徹（ Role： Sole author）

サイエンス&テクノロジー社  2010 

薄膜ハンドブック　第2版, 2．2．1　エピタキシーの基礎

竹田美和, 宇治原徹（ Role： Joint author）

オーム社  2008 

4.1.5. 半導体量子構造の結晶成長と形成過程「自然に学ぶ材料プロセッシング」

宇治原徹（ Role： Sole author）

三共出版  2007 

"Effects of a Magnetic Field on the Crystallization of Protein" in "Materials Science in Static High Magnetic Fields"

G. Sazaki, S. Yanagiya, S.D. Durbin, S. Miyashita, T. Nakata, H. Komatsu, T. Ujihara, K.Nakajima, M. Motokawa（ Role： Joint author）

2002 

溶液の組成がDNA修飾ナノ粒子結晶 の品質およびサイズに与える影響

張力東，小島憧子，周幸儀 ，太田昇，関口博史，原田 俊太，宇治原徹， 塚本勝男，田川美穂

第52回結晶成長国内会議（JCCG-52）  2023.12.4 

4H-SiC溶液成長シミュレーションの機 械学習における転移学習によるデータ数削減

甘原，党一帆，沓掛健太 朗，原田俊太，田川美穂， 宇治原徹

第52回結晶成長国内会議（JCCG-52）  2023.12.6 

SiC溶液成長における溶質と不純物の 結合安定性の第一原理計算による解析

関翔太，河村貴宏，原田俊 太，田川美穂，宇治原徹

第52回結晶成長国内会議（JCCG-52）  2023.12.5 

SiC溶液成長法における実験者の知識 を利用したスケールアップのための最適化手法の構築

霜田大貴，鈴木皓己，沓掛 健太朗，原田俊太，田川美 穂，宇治原徹

第52回結晶成長国内会議（JCCG-52）  2023.12.5 

DNA修飾ナノ粒子の結晶成長におけ る粒子間相互作用に対するPEG添加の影響

小島憧子，張力東，太田 昇，関口博史，原田俊太， 宇治原徹，塚本勝男，田川 美穂

第52回結晶成長国内会議（JCCG-52）  2023.12.4 

Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth International conference

Huiqin Zhou, Yuma Fukami, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara

International Conference on Materials and Systems for Sustainability 2023 (ICMaSS2023)  2023.12.2 

Molecular Beam Epitaxy (MBE) and Metal Organic Vapor Phase Epitaxy (MOVPE) Surface Stability of Reconstructions on BAs (001) Surface: First-principles calculation International conference

PeiYang Cai, Toru Akiyama, Shunta Harada, Miho Tagawa, Toru Ujihara

International Conference on Materials and Systems for Sustainability 2023 (ICMaSS2023)  2023.12.2 

Polyethylene Glycol Additive controled crystallization of DNA-Functionalized Nanoparticles International conference

Shoko Kojima, L.D. Zhang, H. Sumi, N. Ohta, H.Sekiguchi, S. Harada, T. Ujihara, K.Tsukamoto, M. Tagawa

International Conference on Materials and Systems for Sustainability 2023 (ICMaSS2023)  2023.12.2 

Effects of Sodium Chloride and Deuterium Oxide on Crystal Growth of DNAFunctionalized Nanoparticles International conference

Lidong Zhang, Maasa Yokomori, Hayato Sumi, HsinYi Chou, Shoko Kojima, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto, Miho Tagawa

International Conference on Materials and Systems for Sustainability 2023 (ICMaSS2023)  2023.12.2 

Effect of macrostep height and solution flow on formation of solvent inclusion in SiC solution growth International conference

Yuma Fukami, Huiqin Zhou, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara

International Conference on Materials and Systems for Sustainability 2023 (ICMaSS2023)  2023.12.2 

Exploring Phonon Localization in TitaniumChromium Oxides with Modulated International conference

S. Harada, T. Hattori, M. Inden, S. Sugimoto, M. Itoh, M.Tagawa, T.Ujihara

International Conference on Materials and Systems for Sustainability 2023 (ICMaSS2023)  2023.12.2 

Optimization of experimental conditions using machine learning for large-diameter crystal growth in solution growth of SiC International conference

Daiki Shimoda, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara

International Conference on Materials and Systems for Sustainability 2023 (ICMaSS2023)  2023.12.2 

Numerical Analysis of Macrostep Instability focusing on Carbon Diffusion Field in SiC Solution Growth International conference

Yuki Nakanishi, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara

International Conference on Materials and Systems for Sustainability 2023 (ICMaSS2023)  2023.12.2 

Effect of Solvent Properties on Growth Process in SiC Solution Growth International conference

Li Juanheng, Huiqin Zhou, Xin Liu, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara

International Conference on Materials and Systems for Sustainability 2023 (ICMaSS2023)  2023.12.2 

First-principles analysis of the mechanism of formation of large macrosteps by additive elements in solution growth of SiC International conference

Shota Seki, Takahiro Kawamura, Shunta Harada, Miho Tagawa, Toru Ujihara

International Conference on Materials and Systems for Sustainability 2023 (ICMaSS2023)  2023.12.2 

機械学習によるマテリアル開発

宇治原徹

日本電子材料技術協会　2023年第60回秋期講演⼤会  2023.11.24 

SiC溶液成長における溶媒インクルージョン形成のマルチスケールシミュレーション

鄭 朗程, 周 惠琴, 黨 一帆, 沓掛 健太朗, 原田　俊太, 田川 美穂, 宇治原 徹

2023年第84回応用物理学会秋季学術講演会  2023.9.20 

GaN気相成長における結晶表面状態予測のためのデジタルツインの構築

関 翔太, 橋爪 優果, 髙石 将輝, 角岡 洋介, 沓掛 健太朗, 園田 勉, 高橋 言緒, 井手 利英, 清水 三聡, 宇治原 徹

2023年第84回応用物理学会秋季学術講演会  2023.9.20 

GaN気相成長における結晶表面状態予測のための機械学習用特徴量抽出

園田 勉, 高橋 言緒, 角岡 洋介, 高石 将輝, 関 翔太, 沓掛 健太朗, 井手 利英, 清水 三聡, 宇治原徹

2023年第84回応用物理学会秋季学術講演会  2023.9.20 

大口径SiC 溶液成長における基礎技術とその応用

宇治原徹

日本金属学会2023年(第173回)秋期講演大会  2023.9.22 

SiC溶液法における溶媒中の溶質-不純物間結合安定性の第一原理計算による解析

関 翔太、河村 貴宏、原田 俊太、田川 美穂、宇治原 徹

日本金属学会2023年(第173回)秋期講演大会  2023.9.22 

ＳｉＣ溶液成長における炭素拡散場を介したマクロステップ相互作用の数値解析

中西 祐貴、沓掛 健太朗、原田 俊太、田川 美穂、宇治原 徹

日本金属学会2023年(第173回)秋期講演大会  2023.9.22 

Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth International conference

Huiqin Zhou, Yuma Fukami, Hitoshi Miura, Kentaro Kutsukake, Shunta Harada and Toru Ujihara

International Conference on Silicon Carbide and Related Materials （ICSCRM2023）  2023.9.19 

Effects of Solution Properties on Growth Conditions of SiC Solution Growth International conference

Juanheng Li, Zhou Huiqin, Liu Xin, Kutsukake Kentaro, Harada Shunta, Tagawa Miho and Ujihara Toru

International Conference on Silicon Carbide and Related Materials （ICSCRM2023）  2023.9.20 

Optimization of Temperature Distribution and Flow Distribution using Machine Learning for 8-Inch SiC Crystal Growth by TSSG Method International conference

Daiki Shimoda, Kentaro Kutsukake, Shunta Harada, Miho Tagawa and Toru Ujihara

International Conference on Silicon Carbide and Related Materials （ICSCRM2023）  2023.9.19 

AI を活用した SiC溶液成長技術の開発と今後の展望

宇治原徹

一般社団法人ワイドギャップ半導体学会　特別公開シンポジウム  2023.9.7 

Modulated crystallographic shear structure in titanium-chromium oxides: their structure and phonon transport properties International conference

S. Harada, T. Hattori, M. Inden, S. Sugimoto, M. Itoh, M. Tagawa, T. Ujihara

26TH CONGRESS AND GENERAL ASSEMBLY OF THE INTERNATIONAL UNION OF CRYSTALLOGRAPHY(IUCr2023)  2023.8.29 

Effects of PEG addition on particle-particle interactions in crystal growth of DNA functionalized nanoparticles International conference

Shoko Kojima, Hayato Sumi, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto, Miho Tagawa

20th International Conference on Crystal Growth and Epitaxy(ICCGE-20)  2023.7.31 

Surface Stability of Reconstructions on BAs (001) Surface: An Ab InitioBased Approach International conference

(DC)Cai Peiyang, Toru Akiyama, Shunta Harada, Miho Tagawa, Toru Ujihara

20th International Conference on Crystal Growth and Epitaxy(ICCGE-20)  2023.8.3 

Effect of crystallization conditions for the enlargement of the size of DNA-functionalized nanoparticles crystals International conference

Lidong Zhang, Maasa Yokomori, Hayato Sumi, HsinYi Chou, Shoko Kojima, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto, Miho Tagawa

20th International Conference on Crystal Growth and Epitaxy(ICCGE-20)  2023.8.2 

First-principles analysis of the activation energy of solute-additive bonds in the solvent of the SiC solution growth International conference

Shota Seki, Takahiro Kawamura, Shunta Harada, Miho Tagawa, Toru Ujihara

20th International Conference on Crystal Growth and Epitaxy(ICCGE-20)  2023.8.3 

Analysis of Macrostep Interaction via Carbon Diffusion Field in SiC Solution Growth International conference

Yuki Nakanishi, Kentaro Kutsukake, Yifan Dang, Shunta Harada, Miho Tagawa, Toru Ujihara

20th International Conference on Crystal Growth and Epitaxy(ICCGE-20)  2023.8.1 

Effect of macrostep height on formation of solvent inclusion in SiC solution growth International conference

Yuma Fukami, Huiqin Zhou, Kentaro Kutsukake, Shunta Harada, Miho Tagawa,Toru Ujihara

20th International Conference on Crystal Growth and Epitaxy(ICCGE-20)  2023.8.1 

Optimization method of crystal growth conditions by tacit knowledge (for large-diameter SiC solution growth) International conference

Toru Ujihara, Masaru Isono, Kentaro Kutsukake, Ichiro Takeuchi, Koki Suzuki, Tomoaki Furusho, Miho Tagawa, Shunta Harada

20th International Conference on Crystal Growth and Epitaxy(ICCGE-20)  2023.7.31 

連立微分方程式で記述される半導体プロセスシミュレーションの機械学習

佐藤 陸彌, 沓掛 健太朗, 原田 俊太, 田川 美穂, 宇治原 徹

第70回応用物理学会春季学術講演会  2023.3.18 

SiC溶液成長法におけるパレート解に影響を与えるパラメータの考察

霜田 大貴, 沓掛 健太朗, 原田 俊太, 田川 美穂, 宇治原 徹

第70回応用物理学会春季学術講演会  2023.3.15 

連立微分方程式で記述される半導体プロセスシミュレーションの機械学習

佐藤 陸彌, 沓掛 健太朗, 原田 俊太, 田川 美穂, 宇治原 徹

第70回応用物理学会春季学術講演会  2023.3.18 

量子アニーリングを用いたプロセス最適化の検討

眞野 幸希, 沓掛 健太朗, 丹野 航太, 中野 倖太, 丸山 伸伍, 宇治原 徹

第70回応用物理学会春季学術講演会  2023.3.17 

Analysis of the Effect of Solvent Composition on Suppression of Inclusion in SiC Solution Growth by Phase Field Method

HUIQIN ZHOU, Yuma Fukami, Hisaki Takemoto, Yifan Dang, Miho Tagawa, Shunta　Harada, Toru Ujihara

第70回応用物理学会春季学術講演会  2023.3.15 

SiC溶液成長におけるマクロステップ高さがインクルージョン形成に及ぼす影響

深見 勇馬, 周 惠琴, 竹本 玖生, 黨 一帆, 原田 俊太, 田川 美穂, 宇治原 徹

第70回応用物理学会春季学術講演会  2023.3.15 

SiC溶液成長における炭素拡散場を介したステップ相互作用の解析

中西 祐貴, 沓掛 健太朗, 黨 一帆, 原田 俊太, 田川 美穂, 宇治原 徹

第70回応用物理学会春季学術講演会  2023.3.15 

SiC溶液成長における粘度が流体分布、温度分布および成長速度に与える影響

李 鐫恒, 党 一帆, 太田 壮音, 沓掛 健太朗, 原田 俊太, 田川 美穂, 宇治原 徹

第70回応用物理学会春季学術講演会  2023.3.15 

CFD simulation in solution growth aided by machine learning- Application for SiC top-seeded solution growth International conference

Toru UJIHARA

3rd International Symposium on Modeling of Crystal Growth Processes & Devices (MCGPD-2023)   2023.3.6 

AIとオペレータの『意味』を介したコミュニケーションによる結晶成長技術開発

宇治原徹

AI NEXT FORUM 2023  2023.2.16 

Large Diameter SiC Crystal Growth assisted by AI technology International conference

Toru UJIHARA

33th 2022 International Symposium on Micro-Nano Mechatronics and Human Science (MHS2022)  2022.11.30 

Development of High Thermal Conductive Ceramics and High Thermal Conductive Resins Using Fibrous Aluminum Nitride Filler Invited International conference

Toru Ujihara

10th IEEE CPMT Symposium Japan (ICSJ2021),November 10-12, 2021  2021.11.12 

SiC溶液法における添加元素の溶液局所構造への影響の第一原理計算による解明

関翔太，河村貴宏，原田俊太，田川美穂，宇治原徹

第51回結晶成長国内会議(JCCG-51)  2022.10.31 

DNA修飾ナノ粒子の結晶成長における重水の影響

張力東，横森真麻，太田昇，関口博，原田俊太，宇治原徹，田川美穂

第51回結晶成長国内会議（JCCG-51）  2022.11.1 

SiC溶液成長における溶液の拡散がステップ成長に及ぼす影響の解明

竹本玖生，周恵琴，深見勇馬，沓掛健太郎，原田俊太，田川美穂，宇治原徹

第51回結晶成長国内会議(JCCG-51)  2022.11.1 

大口径SiC溶液成長の現状と課題

宇治原 徹, 鈴木 皓己, 古庄 智明, 沓掛 健太朗, 黨 一帆, 劉 欣博, 朱 燦, 周 惠琴, 深見 勇馬, 太田 壮音, 関 翔太, 霜田 大貴, 中西 祐貴, 島 颯一, 布野 日奈子, 上松 浩, 原田 俊太, 田川 美穂

2022年第83回応用物理学会秋季学術講演会,東北大学, 2022年9月20-26日  2022.9.20 

Surface Stability of reconstructions on BAs (111) surface:An Ab Initio-Based Approach

Peiyang Cai, Toru Akiyama, TomomasaKiyozawa, Takafumi Hatano, Shunta Harada,Miho Tagawa, Hiroshi Ikuta, Toru Ujihara

2022年第83回応用物理学会秋季学術講演会,東北大学, 2022年9月20-26日  2022.9.21 

専門家の知識を入れたものづくりのためのデータ同化（ii）-SiC溶液成長シミュレーションへの適用-

太田 壮音, 沓掛 健太朗, 竹野 思温, 烏山 昌幸, 竹内 一郎, 原田 俊太, 田川 美穂, 宇治原　徹

2022年第83回応用物理学会秋季学術講演会,東北大学, 2022年9月20-26日  2022.9.22 

専門家の知識を入れたものづくりのためのデータ同化（i）-手法の提案-

沓掛 健太朗, 竹野 思温, 太田 壮音, 烏山 昌幸, 竹内 一郎, 宇治原 徹

2022年第83回応用物理学会秋季学術講演会,東北大学, 2022年9月20-26日  2022.9.22 

機械学習を用いたSiC結晶の転位増殖抑制に向けた降温条件の探索

熊谷 尚純, 沓掛 健太朗, 原田 俊太, 田川 美穂, 宇治原 徹

2022年第83回応用物理学会秋季学術講演会,東北大学, 2022年9月20-26日  2022.9.22 

多段プロセスに対するベイズ最適化の提案 -太陽電池プロセスを例に-

沓掛 健太朗, 中野 高志, 草川 隼也, 竹内 一郎, 原田 俊太, 田川 美穂, 宇治原 徹

2022年第83回応用物理学会秋季学術講演会,東北大学, 2022年9月20-26日  2022.9.22 

SiC溶液法における溶媒への添加元素効果の第一原理計算による解析

関 翔太, 河村 貴宏, 原田 俊太, 田川 美穂, 宇治原 徹

2022年第83回応用物理学会秋季学術講演会,東北大学, 2022年9月20-26日  2022.9.20 

SiC溶液成長法における中間メルトバックによる表面平坦性の改善

馬 叔陽, 朱 燦, 党 一帆, 劉 欣博, 原田 俊太, 田川 美穂, 宇治原 徹

2022年第83回応用物理学会秋季学術講演会,東北大学, 2022年9月20-26日  2022.9.20 

Analysis of Inclusion Defect Generation in SiC Solution Crystal Growth Method Using Phase-Field Model International conference

HUIQIN ZHOU , YUMA FUKAMI, YIFAN DANG, Shunta Harada, Miho Tagawa, Toru Ujihara

2022.9.20 

Simulation of Macrosteps Development and Design of Control Pattern for Solution Growth of SiC

Yifan Dang, Xinbo Liu, Yuma Fukami, Shuyang Ma, Can Zhu, Shunta Harada, Miho Tagawa,Toru Ujihara

2022.9.20 

Analysis of effect of additives in solution growth of SiC by first-principles molecular dynamics calculation International conference

Shota seki, Takahiro Kawamura, Shunta Harada, Miho Tagawa, Toru Ujihara

19th International Conference on Silicon Carbide and Related Materials （ICSCRM2022）  2022.9.12 

Nucleation sites of stacking faults detected by in-operando X-ray topography for designing bipolar-degradation-free SiC MOSFETs International conference

KUMIKO KONISHI, Ryusei Fujita, Keisuke Kobayashi, Akio Yoneyama, Kotaro Ishiji, Hiroyuki Okino, Toru Ujihara, Akio Shima

19th International Conference on Silicon Carbide and Related Materials （ICSCRM2022）  2022.9.14 

デジタルツインを用いた最適化手法によるＳ iＣ結晶成長技術開発 　Novel optimization method with digital twin for SiC crystal growth system

宇治原徹

シンポジウム | イノベーション共創プログラム（CIP） | デジタルトランスフォーメーションがもたらす化学・材料領域のイノベーション「デジタルトランスフォーメーションがもたらす化学・材料領域のイノベーション」、日本化学会 第102春季年会(2022)　 2022年3月23日-26日  2022.3.25 

暗黙知によるプロセス最適化手法の開発（SiC結晶成長プロセスを例に）

宇治原徹

2022年第69回応用物理学会春季学術講演会、2022年 3月 22日-26日  2022.3.22 

面欠陥周期配列を含む酸化チタン自然超格子の熱輸送における　フォノンの粒子性と波動性の定量化

杉本 峻也, 田川 美穂, 宇治原 徹, 原田 俊太

2022年第69回応用物理学会春季学術講演会、2022年 3月 22日-26日  2022.3.24 

面欠陥周期配列を含む酸化チタン自然超格子の熱輸送におけるフォノンの粒子性と波動性の定量化

杉本 峻也、田川 美穂、宇治原 徹、原田 俊太

2022年第69回応用物理学会春季学術講演会、2022年 3月 22日-26日  2022.3.24 

AlNウィスカー被覆複合粒子を用いた樹脂材料厚み方向の放熱経路形成による高熱伝導化

岡田 詩歩・ 宇治原 徹・ 田川 美穂・ 原田 俊太

化学工学会第87年会 2022.3.16(水) - 3.18(金)  2022.3.18 

完全性の高い周期界面を含む自然超格子酸化チタンの構造制御と熱輸送特性

原田 俊太、小坂 直輝、杉本 峻也、八木 貴志、田川 美穂、宇治原 徹

公益社団法人日本金属学会2022年春期第170回講演大会：2022年3月15日-17日、3月22日  2022.3.16 

Cr添加酸化チタンにおける面欠陥不規則配列の形成

位田 麻衣、杉本 峻也、服部 泰河、田川 美穂、宇治原 徹、原田 俊太

公益社団法人日本金属学会2022年春期第170回講演大会：2022年3月15日-17日、3月22日  2022.3.22 

畳み込みニューラルネットワークを用いたPhase-Field計算の高速化

田中悠太、神武孝彦、林宏太郎、名大　高石将輝、沓掛健太朗、宇治原徹

（一社）日本鉄鋼協会　第183回春季講演大会2022年3月15日-17日  2022.3.17 

機械学習による高品質 SiC 溶液成長技術とパワー半導体実装の展望

宇治原徹

一般社団法人エレクトロニクス実装学会関西支部 主催　第19回 技術講演会　『脱炭素社会に向けて加速するニュータイプ・パワー半導体材料・実装技術最前線』  2022.3.7 

デジタルツインを用いた結晶成長プロセス最適化技術（SiC溶液成長を中心に）

宇治原徹

CVD反応分科会第35回シンポジウム「ドライプロセスに対するプロセスインフォマティクス」  2022.1.24 

機械学習によるSiCバルク結晶成長の最適化

宇治原徹

日本学術振興会　第R032委員会　第5回研究会「R032委員会キックオフ研究会：ワイドギャップ半導体Ⅰ」  2022.1.7 

人と共に進化するデジタルツイン素材プロセス最適化技術（SiC溶液成長を例に）

宇治原徹

先端エネルギー材料理工共創研究センター　2021年度ワークショップ  2021.12.23 

大口径SiC結晶成長のためのプロセスインフォマティクス技術の開発

宇治原徹

先進セラミックス学振124委員会　第166回講演会  2021.12.16 

Large-diameter SiC crystal grown by solution growth using surrogate model Invited International conference

Toru Ujihara

The Material Research Meeting 2021, December 13-16, 2021  2021.12.14 

Microstructure and properties of sintered aluminum nitride (AlN) with AlN whiskers addition International conference

Naoki Kondo, Akihiro Shimamura, Mikinori Hotta, Hiroki Shimizu, Toru Ujihara, Yoshihiro Ohnishi

The Material Research Meeting 2021, ,December 13-16, 2021  2021.12.15 

Process optimization for the seeded directional solidification of Si ingot using CFD and machine learning International conference

Xin Liu, Yifan Dang, Hiroyuki Tanaka, Kentaro Kutsukake, Toru Ujihara, Noritaka Usami

The Material Research Meeting 2021, ,December 13-16, 2021  2021.12.14 

溶液法による6インチSiC結晶の成長とそれに活用したプロセス・インフォマティクス技術VI-2 Process Informatics for 6 inch SiC Solution Growth

宇治原徹

公益社団法人応用物理学会先進パワー半導体分科会第8回講演会  2021.12.10 

SiCバルク結晶成長のプロセスインフォマティクス

宇治原徹

第26回結晶工学セミナー， 第3回インフォマティクス応用研究グループ研究会　結晶工学×インフォマティクス  2021.11.16 

DNA-functionalized colloidal crystals for encapsulating macromolecules Invited International conference

Maasa Yokomori, Shigeo S. Sugano, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara, Miho Tagawa

International Conference on Materials and System (ICMaSS) 2011  2021.11.5 

DNA-functionalized colloidal crystals for encapsulating macromolecules International conference

Maasa Yokomori, ‪Shigeo S. Sugano, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, ‬Toru Ujihara, Miho Tagawa

International Conference on Materials and System (ICMaSS) 2021   2021.11.5 

Optimization of crystallization conditions for the enlargement of the size of DNA-functionalized nanoparticles crystals International conference

LiDong Zhang, Maasa Yokomori, HsinYi Chou, Hayato Sumi, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara, Miho Tagawa

International Conference on Materials and System (ICMaSS) 2021   2021.11.6 

DNA-guided crystallization of nanoparticles: the effect of solvent composition on crystal structure International conference

Miho Tagawa, Maasa Yokomori, Yuji Maeda, Hayato Sumi, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara

International Conference on Materials and System (ICMaSS) 2021   2021.11.6 

High fracture toughness aluminum nitride (AlN) by AlN-whiskers addition and tape-cast International conference

Hiroki Shimizu, Naoki Kondo, Akihiro Shimamura, Mikinori Hotta, Shunta Harada, Toru Ujihara, Yoshihiro Ohnishi

International Conference on Materials and System (ICMaSS) 2020  2021.11.5 

Bayesian optimization of process conditions for grinding process of SiC International conference

Kentaro Kutsukake, Keiichi Osada, Takashi Nakano, Toru Ujihara, Kiyoshi Narita, Ryong-Seok Doi, Yukihisa Takeda

International Conference on Materials and System (ICMaSS) 2019  2021.11.5 

Three-Dimensional Simulation of Flow in a SiC Solution Growth Furnace International conference

Wancheng Yu, Can Zhu, Yifan Dang, Shunta Harada, Miho Tagawa, Toru Ujihara

International Conference on Materials and System (ICMaSS) 2018  2021.11.5 

Searching for materials with high temperature coefficient of electrode potential for thermal energy conversion using machine learning International conference

Kohei Ishikawa, Shunta Harada, Miho Tagawa, Toru Ujihara

International Conference on Materials and System (ICMaSS) 2017  2021.11.4 

Application of C-face dislocation conversion to 6-inch SiC solution crystal growth International conference

Can Zhu, Wancheng Yu, Koki Suzuki, Yifan Dang, Xinbo Liu, Tomoaki Furusho, Miho Tagawa, Shunta Harada, Toru Ujihara

International Conference on Materials and System (ICMaSS) 2016  2021.11.5 

Practical Cascade Bayesian Optimization for optimization of solar cell process International conference

Takashi Nakano, Kentaro Kutsukake, Toru Ujihara

International Conference on Materials and System (ICMaSS) 2015  2021.11.5 

DNA-guided crystallization of nanoparticles: the effect of solvent composition on crystal structure International conference

Miho Tagawa, Maasa Yokomori, Yuji Maeda, Hayato Sumi, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara

International Conference on Materials and System (ICMaSS) 2014  2021.11.6 

Optimization of crystallization conditions for the enlargement of the size ofDNA-functionalized nanoparticles crystals International conference

Lidong Zhang, Xinyi Zhou, Hayato Sumi, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara, Miho Tagawa

International Conference on Materials and System (ICMaSS) 2013  2021.11.6 

Thermal conduction in titanium oxide natural superlattice with an ordered arrangement of coherent interfaces International conference

Shunta Harada, Naoki Kosaka, Shunya Sugimoto, Takashi Yagi, Miho Tagawa, Toru Ujihara

International Conference on Materials and System (ICMaSS) 2012  2021.11.6 

長時間SiC溶液成長における全面ステップモーフォロジィのシミュレーション

党一帆、劉欣博、朱燦、郁万成、鈴木皓己、古庄智明、原田俊太、田川美穂、宇治原徹

第50回結晶成長国内会議（JCCG-50）、2021年10月27日～10月29日  2021.10.27 

擬単結晶シリコンの一方向凝固プロセスのデータ駆動型最適化と検証

劉鑫、黨一帆、田中博之、福田祐介、沓掛健太郎、宇治原徹、宇佐美徳隆

第50回結晶成長国内会議（JCCG-50）、2021年10月27日～10月29日  2021.10.29 

溶液法による6インチSiC結晶成長

宇治原徹

第50回結晶成長国内会議（JCCG-50）、2021年10月27日～10月29日  2021.10.27 

完全性の高い界面を周期的に含む自然超格子酸化チタン結晶の構造制御

原田俊太、杉本峻也、小坂直輝、田川美穂、宇治原徹

第50回結晶成長国内会議（JCCG-50）、2021年10月27日～10月29日  2021.10.27 

Cr添加酸化チタン自然超格子における面欠陥不規則配列

服部泰河、杉本峻也、田川美穂、宇治原徹、原田俊太

第50回結晶成長国内会議（JCCG-50）、2021年10月27日～10月29日  2021.10.27 

Numerical Investigation and Optimization of Long-term Stability for SiC Solution Growth Invited International conference

Y. DANG, C. ZHU, M. IKUMI, M. TAKAISHI, W. YU, W. HUANG, X. LIU, S. HARADA, T. MIHO, T. UJIHARA

ECSCRM2021, Vinci International Convention Centre, Tours, France, 24-28 October 2021  2021.10.26 

6-inch SiC crystal growth by solution method assisted with AI technology Invited International conference

C. ZHU, W. YU, K. SUZUKI, Y. DANG, T. FURUSHO, S. HARADA, M. TAGAWA, T. UJIHARA

ECSCRM2021, Vinci International Convention Centre, Tours, France, 24-28 October 2021  2021.10.27 

A solvent design method for SiC solution growth based on solution property induced surface stability International conference

X. LIU, Y. DANG, S. HARADA, T. UJIHARA,

ECSCRM2021, Vinci International Convention Centre, Tours, France, 24-28 October 2021  2021.10.27 

結晶成長デジタルツインを用いた大口径高品質SiC結晶の開発

宇治原徹

日本化学会第11回CSJ化学フェスタ2021, 産総研特別企画：プロセス・インフォマティクス～進化する材料開発の最前線～　2021年10月19日～21日  2021.10.19 

Controlling Protein Crystallization in Nanoliter Droplets Treated by Electrically Induced Microbubbles International conference

Naotomo Tottori, Azusa Takao, Akiho Hirao, Akira Shinod, Akiyoshi Nakamura,Yusuke Yamada, Maasa Yokomori, Miho Tagawa, Shigeo S. Sugano, Shinya Sakuma, Yoko Yamanishi

MicroTAS2021   2021.10.12 

Thermal conduction in titanium oxide natural superlattice with an ordered arrangement of planar faults with pico-scale structural perfection International conference

S. Harada, N.Kosaka, S.Sugimoto, T.Yagi, M.Tagawa, T.Ujihara

The 2nd Asian Conference on Thermal Sciences   2021.10.5 

Coherent thermal conduction in titanium-chrome oxide natural superlattices with an ordered arrangement of planar faults International conference

S.Sugimoto, G.Kim, T.Takeuchi, M.Tagawa, T.Ujihara, S.Harada