研究者詳細 - 堀田　昌宏

論文 - 堀田　昌宏

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Nitrogen-displacement-related recombination centers generated by electron beam irradiation in n-type and p-type homoepitaxial GaN layers 査読有り

Endo, M; Horita, M; Suda, J

APPLIED PHYSICS EXPRESS 17 巻 ( 1 ) 2024年1月

記述言語：英語出版者・発行元：Applied Physics Express

Recombination centers originating from point defects generated by the displacement of N atoms in n-type and p-type GaN were investigated by analyzing Shockley-Read-Hall (SRH) recombination currents in homoepitaxial GaN p-n junctions. These defects were intentionally generated by electron beam (EB) irradiation at 137 keV. The net doping concentrations in p+-n junction diodes were not changed following irradiation although the levels in p-n+ junction diodes decreased as the EB fluence was increased. The SRH recombination current also increased with increases in the fluence. This work additionally evaluated the relationship between recombination lifetimes and trap concentrations obtained by deep level transient spectroscopy.

DOI： 10.35848/1882-0786/ad16ad

High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO<sub>2</sub> interfaces annealed in POCl<sub>3</sub> 査読有り

Ito, K; Horita, M; Suda, J; Kimoto, T

APPLIED PHYSICS EXPRESS 16 巻 ( 7 ) 2023年7月

記述言語：英語出版者・発行元：Applied Physics Express

Hall effect measurements were conducted for MOSFETs with and without post-oxidation-annealing (POA) fabricated on the p-body doping in a wide doping range to vary the effective normal field (E eff). The Hall mobility (μ Hall) in the high-E eff region of the MOSFETs annealed in phosphoryl chloride (μ Hall = 41 cm2 V−1 s−1 at E eff = 1.1 MV cm−1) is much higher than that of MOSFETs annealed in nitric oxide (NO) (μ Hall = 14 cm2 V−1 s−1 at E eff = 1.1 MV cm−1), suggesting that the trapped electrons act as strong Coulomb scattering centers for the MOSFETs annealed in NO and without POA.

DOI： 10.35848/1882-0786/ace150

Correlation between non-ionizing energy loss and production rate of electron trap at <i>E</i><sub>C</sub> - (0.12-0.20) eV formed in gallium nitride by various types of radiation 査読有り

Aoshima, K; Horita, M; Suda, J

APPLIED PHYSICS LETTERS 122 巻 ( 1 ) 2023年1月

記述言語：英語出版者・発行元：Applied Physics Letters

Production rate (PR = trap concentration/incident fluence) of traps formed by energetic particles is important for predicting device degradation caused by radiation when developing radiation-resistant devices. We demonstrate a clear correlation between non-ionizing energy loss (NIEL) and PR of an electron trap at about 0.12-0.20 eV below the conduction band edge [EC - (0.12-0.20) eV] for various types of energetic particles in gallium nitride (GaN). NIEL values in GaN for electrons, protons, and α-rays were calculated using a screened-relativistic treatment, and NIEL values for gamma-rays were calculated by simulating slowed-down spectra due to shielding material. To obtain the PRs of the electron trap, 60Co gamma-rays with an average photon energy of 1.25 MeV and electron beams with energies from 137 keV to 2 MeV were irradiated onto n-type GaN Schottky barrier diodes. We measured the concentration of an electron trap at EC - (0.13-0.14) eV using deep-level transient spectroscopy. We also used the PRs of electron traps with similar energy levels of EC - (0.12-0.20) eV from previous studies on electrons, protons, and α-rays irradiated on GaN. All the trap PRs were proportional to the NIEL in a range of eight orders of magnitude, which confirms that the energy levels formed by various energetic particles have the same origin of being generated by atomic displacements. The obtained relationship coefficient between the NIEL and PRs of the trap is useful for predicting the degradation of GaN-based devices due to traps formed by various kinds of radiation.

DOI： 10.1063/5.0128709

Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AIN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition 査読有り

Ito K., Narita T., Iguchi H., Iwasaki S., Kikuta D., Kano E., Ikarashi N., Tomita K., Horita M., Suda J.

Technical Digest - International Electron Devices Meeting, IEDM 2023年

記述言語：英語出版者・発行元：Technical Digest - International Electron Devices Meeting, IEDM

Polarization engineering by AIN interlayers (AlN-ILs) deposited via plasma-enhanced atomic layer deposition was demonstrated in AlSiO/p-type GaN MOSFETs. Transmission electron microscopy observations revealed that the AlN-ILs were grown on GaN epitaxially and therefore could induce polarization charges, similar to AlGaN/GaN. The decrease in the threshold voltage (Vth) with increasing AIN-IL thickness corresponded to the polarization charge density. In addition, insertion of the AIN-IL suppressed the positive bias instability by less than 0.05 V. By controlling the AIN-IL thickness and the channel p-type doping, we controlled the Vth the range from -3 to 5 V and achieved enhanced channel mobility compared with that for the corresponding MOSFET without an AIN-IL.

DOI： 10.1109/IEDM45741.2023.10413714

Depth profiling of E <inf>C</inf> - 0.26 eV electron traps introduced in homoepitaxial n-type GaN by ultra-low-dose Si-ion implantation and subsequent annealing 査読有り

Iguchi H., Horita M., Suda J.

Applied Physics Express 15 巻 ( 12 ) 2022年12月

記述言語：英語出版者・発行元：Applied Physics Express

Si ions were implanted into homoepitaxial n-type GaN at a peak concentration of 3 × 1014 cm−3 with subsequent annealing, and the associated formation of electron traps was investigated in detail using deep-level transient spectroscopy. A major electron trap was identified as 0.26 eV below the conduction band minimum and this trap concentration increased with increasing post-implantation annealing temperature, to a value of 6-8 × 1015 cm−3. Significant increases in the net donor concentration (N D) were also observed within the implanted region. The profile of the electron trap concentration was correlated with these increases in N D, suggesting that these traps acted as donors.

DOI： 10.35848/1882-0786/aca45d

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing 査読有り

Kachi, T; Narita, T; Sakurai, H; Matys, M; Kataoka, K; Hirukawa, K; Sumida, K; Horita, M; Ikarashi, N; Sierakowski, K; Bockowski, M; Suda, J

JOURNAL OF APPLIED PHYSICS 132 巻 ( 13 ) 2022年10月

記述言語：英語出版者・発行元：Journal of Applied Physics

P-type doping in selected areas of gallium nitride (GaN) using magnesium (Mg)-ion implantation and subsequent ultra-high-pressure annealing (UHPA) are investigated to improve the performance of vertical GaN power devices. UHPA allows a high-temperature process without decomposition of the GaN surface and virtually complete activation of the implanted Mg ions in GaN. In the present paper, we provide an overview of recent challenges in making UHPA more realistic as an industrial process. Instead of UHPA at more than 1400 °C for a short duration, prolonged UHPA at 1300 °C demonstrates a comparable acceptor activation of Mg-ion-implanted GaN. This can reduce the annealing pressure to approximately 300 MPa and enlarge the processable wafer diameter. The second challenge is controlling the doping profiles in the lateral and vertical directions. We demonstrate fine patterning of the p-type regions, which indicates the limited lateral diffusion of Mg through UHPA. However, controlling the vertical doping profile is challenging. The nitrogen vacancies formed by ion implantation reduce the effective acceptor concentration near the surface, which can be compensated for by sequential nitrogen ion implantation. Defect-assisted Mg diffusion to the deeper region causes a redistribution of the Mg atoms and should be considered in the design of a device. Such anisotropic diffusion of Mg to the c-axis has potential applications in the fabrication of unique vertical device structures such as super junctions.

DOI： 10.1063/5.0107921

Effective channel mobility in phosphorus-treated 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors with various p-body doping concentrations 査読有り

Ito, K; Horita, M; Suda, J; Kimoto, T

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( 9 ) 2022年9月

記述言語：英語出版者・発行元：Japanese Journal of Applied Physics

Phosphorus treatment, which can substantially reduce the interface state density (D it), was used to investigate the impact of D it on effective channel mobility (μ eff) of 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors (MOSFETs). A high μ eff of 126 cm2 V-1 s-1, which exceeds the reported phonon-limited mobility of 83 cm2 V-1 s-1 determined from Hall mobility of nitridation-treated MOSFETs, at a high effective normal field of 0.57 MV cm-1 was obtained in MOSFETs fabricated on a high-purity semi-insulating 4H-SiC substrate at room temperature. This high mobility may be caused by the difference of the density of electrons trapped at the interface states.

DOI： 10.35848/1347-4065/ac87e4

Increase in net donor concentration due to introduction of donor-like defects by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN 査読有り

Iguchi, H; Horita, M; Suda, J

APPLIED PHYSICS EXPRESS 15 巻 ( 7 ) 2022年7月

記述言語：英語出版者・発行元：Applied Physics Express

Si ions were implanted at a dose of 1 × 1010 cm-2 into a homoepitaxial n-type GaN layer with a net donor concentration (N D) of 3-8 × 1015 cm-3. The N D in the implanted region increased by 1-3 × 1015 cm-3 after annealing at a temperature greater than 900 °C compared with that for the as-grown homoepitaxial layer. The increase in N D was considerably larger than the peak concentration of implanted Si ions (3 × 1014 cm-3). No increase in N D was observed for an as-grown sample after annealing. These results clearly suggest that donor-like defects were introduced by implantation of Si ions and a subsequent annealing process.

DOI： 10.35848/1882-0786/ac7433

SiO<sub>2</sub>/GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition 査読有り

Aoshima, K; Taoka, N; Horita, M; Suda, J

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月

記述言語：英語出版者・発行元：Japanese Journal of Applied Physics

We present SiO2/GaN interfaces with a low interface state density and a high breakdown electric field. The SiO2 films were deposited by plasma-enhanced atomic layer deposition (ALD) using bis(diethylamino)silane and O2 plasma at 300 °C on n-type GaN (0001) homoepitaxial layers. An interface state density of less than 1011 cm-2 eV-1 at 0.3 eV below the conduction band edge was confirmed by the conductance method. The value is much lower than those of previously reported ALD-SiO2/GaN interfaces (1012-1013 cm-2 eV-1). A low fixed charge density at the SiO2/GaN interface of 3.7 × 1011 cm-2 and a high dielectric breakdown field of ∼10 MV cm-1 were obtained. Moreover, the interface state density and current-voltage characteristics were further improved by post-deposition annealing at 400 °C in N2 ambient. Scanning transmission electron microscopy with energy-dispersive X-ray analysis revealed the existence of a GaO x interlayer between SiO2 and GaN. The unintentionally formed interlayer could be one of the reasons for the improvement of interface properties at ALD-SiO2/GaN.

DOI： 10.35848/1347-4065/ac4f79

Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN 査読有り

Endo, M; Horita, M; Suda, J

APPLIED PHYSICS LETTERS 120 巻 ( 14 ) 2022年4月

記述言語：英語出版者・発行元：Applied Physics Letters

This work investigated deep levels in p-type GaN originating from intrinsic point defects, using deep level transient spectroscopy (DLTS) to examine homoepitaxial GaN p+-p-n+ junction diodes grown via metalorganic vapor-phase epitaxy. Following exposure to an electron beam with an energy of 137 keV that generated nitrogen vacancies (VN) and nitrogen interstitials (NI), a peak due to EHa hole traps (at 0.52 eV) was observed in DLTS spectra. The injection of minority carriers resulting from applying a forward bias generated signals for EHb (0.5 eV) and EHc (0.8 eV) hole traps while decreasing the EHa signal and increasing the net accepter concentration. The generation of EHa traps can likely be attributed to VN (3+/+) or NI (2+/+) defects based on the results of first-principles calculations. The EHb and EHc hole traps may have been associated with complex defects, including those that generated EHa traps, because these two traps appeared as the concentration of EHa traps decreased.

DOI： 10.1063/5.0086535

Breakdown Electric Field of GaN p<SUP>+</SUP>-n and p-n<SUP>+</SUP> Junction Diodes With Various Doping Concentrations 査読有り

Maeda, T; Narita, T; Yamada, S; Kachi, T; Kimoto, T; Horita, M; Suda, J

IEEE ELECTRON DEVICE LETTERS 43 巻 ( 1 ) 頁： 96 - 99 2022年1月

記述言語：英語出版者・発行元：IEEE Electron Device Letters

Breakdown characteristics in homoepitaxial GaN p-n junction diodes with p+-n and p-n+ junctions with relatively heavy doping concentrations are systematically investigated. The devices have vertical deep mesa etch termination, which enables uniform (nearly ideal) avalanche breakdown without electric field (E-field) crowding at the device edge. For p+-n junction, breakdown E-field of 3.0, 3.3 and 3.8 MV/cm and breakdown voltage (BV) of 340, 207 and 128 V were achieved at the donor concentrations of 7.5 × 1016, 1.5 × 1017, 3.1× 1017 cm-3, respectively. For p-n+ junction, breakdown E-field of 3.2, 3.3 and 4.0 MV/cm and BV of 235, 180 and 110 V were achieved at the acceptor concentrations of 1.3 × 1017, 1.8 × 1017, 4.1 × 1017 cm-3, respectively. No significant difference of the breakdown characteristics between n-type and p-type voltage-blocking layers was observed. These results are consistent with numerical simulations using impact ionization coefficients (IICs) in GaN reported in our previous studies.

DOI： 10.1109/LED.2021.3125328

Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient 査読有り

Sumida, K; Hirukawa, K; Sakurai, H; Sierakowski, K; Horita, M; Bockowski, M; Kachi, T; Suda, J

APPLIED PHYSICS EXPRESS 14 巻 ( 12 ) 2021年12月

記述言語：英語出版者・発行元：Applied Physics Express

We performed an isothermal annealing study on Mg-implanted GaN at 1300 °C in an ultra-high-pressure (1 GPa) nitrogen ambient. Annealing for more than 30 min resulted in a high acceptor activation ratio and a low compensation ratio that were comparable to those obtained with annealing at 1400 °C for 5 min. We also performed annealing at 1300 °C in a reduced nitrogen pressure of 300 MPa which makes us possible to expand the inner diameter of annealing equipment in the future. High electrical activation, similar to one obtained by annealing at 1 GPa, was successfully obtained.

DOI： 10.35848/1882-0786/ac39b0

Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy 査読有り

Aoshima, K; Horita, M; Suda, J

AIP ADVANCES 11 巻 ( 11 ) 2021年11月

記述言語：英語出版者・発行元：AIP Advances

Deep-level transient spectroscopy (DLTS) using Schottky barrier diodes (SBDs) is widely used for quantitative analysis of deep levels. This study focuses on the dependence of Schottky barrier height on apparent time constants and concentrations of electron traps in n-type GaN. DLTS using SBDs with various barrier heights was carried out. Experimental data show that large reverse leakage currents due to low barrier heights resulted in underestimation of time constants and concentrations. Theoretical calculations considering the impact of leakage currents reproduced experimental results well. Based on the calculations, we suggest a minimum required barrier height where accurate time constants and concentrations can be evaluated.

DOI： 10.1063/5.0073747

Effects of the sequential implantation of Mg and N ions into GaN for p-type doping 査読有り

Sakurai, H; Narita, T; Kataoka, K; Hirukawa, K; Sumida, K; Yamada, S; Sierakowski, K; Horita, M; Ikarashi, N; Bockowski, M; Suda, J; Kachi, T

APPLIED PHYSICS EXPRESS 14 巻 ( 11 ) 2021年11月

記述言語：英語出版者・発行元：Applied Physics Express

The sequential implantation of Mg and N ions into GaN was investigated using conventional rapid thermal annealing and ultra-high-pressure annealing (UHPA). In cathodoluminescence, the green luminescence related to nitrogen vacancies (VNs) was mostly suppressed at the Mg/N ratio of 0.5-1.0, whereas the donor-acceptor pair (DAP) emission as a signature of Mg acceptors was maintained high. The excess N implantation reduced the DAP emission through the formation of nonradiative recombination centers. The combined process of optimal Mg/N implantation and UHPA at 1673 K improved ohmic contacts by increasing Mg concentration and suppressing VNs near the surface.

DOI： 10.35848/1882-0786/ac2ae7

GaN縦型パワーデバイス実現に向けた点欠陥評価査読有り

須田淳, 堀田昌宏, 鐘ヶ江一孝

応用物理 90 巻 ( 10 ) 頁： 628 - 631 2021年10月

記述言語：日本語出版者・発行元：公益社団法人応用物理学会

<p>GaN縦型パワーデバイスのエピタキシャル成長，デバイスプロセスの開発，あるいは，デバイス設計に点欠陥の知見は不可欠であるが，SiやGaAsに比べると，GaNの点欠陥の理解はまだまだ不足している．議論が分かれていた電子トラップの起源特定，n型GaN中の正孔トラップの簡便な定量評価方法の開発や測定の高速化によるウェーハマッピング，電子線照射により意図的に窒素原子のみを変位させることにより，窒素空孔や格子間窒素の作るトラップ準位，アニール挙動など，筆者らが取り組んできた研究について紹介する．</p>

DOI： 10.11470/oubutsu.90.10_628

Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy 査読有り

Kanegae, K; Okuda, T; Horita, M; Suda, J; Kimoto, T

JOURNAL OF APPLIED PHYSICS 130 巻 ( 10 ) 2021年9月

記述言語：英語出版者・発行元：Journal of Applied Physics

Electron traps generated during the reactive ion etching (RIE) process in n-type 4H-SiC are investigated using the deep-level transient spectroscopy technique and isothermal capacitance transient spectroscopy (ICTS) technique. Two electron traps of the Z1/2 center are detected in the RIE-etched sample by ICTS measurement at 300 K. A method is proposed to determine the depth profiles of the electron traps that are localized near the etched surface, whereby a depth profile is extracted from the dependence of averaged trap density on the depletion layer width. An exponential distribution is assumed as the depth profile of the electron traps generated during the RIE process. The extracted depth profile was confirmed to be consistent with that determined by the double-correlation method. An appropriate function for the depth profile of carrier traps is assumed and the dependence of the averaged trap density on the depletion layer width is analyzed, which enables the extraction of a depth profile that has both higher depth resolution and higher resolution in the carrier trap density with the proposed method than that with the double-correlation method.

DOI： 10.1063/5.0059588

Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy 査読有り

Kanegae, K; Narita, T; Tomita, K; Kachi, T; Horita, M; Kimoto, T; Suda, J

APPLIED PHYSICS EXPRESS 14 巻 ( 9 ) 2021年9月

記述言語：英語出版者・発行元：Applied Physics Express

The ratio of the photoionization cross sections (σo/n σ o/p) of carbon substituting at the nitrogen site [CN (0/-)] in n-type GaN, which is detected as a hole trap H1 (EV + 0.85 eV) under sub-bandgap-light irradiation (390 nm), is determined with isothermal capacitance transient spectroscopy (ICTS). The current-injection ICTS and the sub-bandgap-light-excited ICTS were compared for the same p+-n junction diode, whereby the hole occupancy ratio (fT) was obtained. Analysis of the dependence of fT on the temperature gave σo/n σ o/p of 3.0 was then used to estimate the charge state of CN (0/-) under sub-bandgap-light irradiation.

DOI： 10.35848/1882-0786/ac16ba

Impact ionization coefficients and critical electric field in GaN 査読有り

Maeda, T; Narita, T; Yamada, S; Kachi, T; Kimoto, T; Horita, M; Suda, J

JOURNAL OF APPLIED PHYSICS 129 巻 ( 18 ) 2021年5月

記述言語：英語出版者・発行元：Journal of Applied Physics

Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p-n junction diode are experimentally investigated at 223-373 K by novel photomultiplication measurements utilizing above- and below-bandgap illumination. The device has a non-punch-through one-side abrupt p--n+ junction structure, in which the depletion layer mainly extends to the p-type region. For above-bandgap illumination, the light is absorbed at the surface p+-layer, and the generated electrons diffuse and reach the depletion layer, resulting in an electron-injected photocurrent. On the other hand, for below-bandgap illumination, the light penetrates a GaN layer and is absorbed owing to the Franz-Keldysh effect in the high electric field region (near the p-n junction interface), resulting in a hole-induced photocurrent. The theoretical (non-multiplicated) photocurrents are calculated elaborately, and the electron- and hole-initiated multiplication factors are extracted as ratios of the experimental data to the calculated values. Through the mathematical analyses of the multiplication factors, the temperature dependences of the impact ionization coefficients of electrons and holes in GaN are extracted and formulated by the Okuto-Crowell model. The ideal breakdown voltage and the critical electric field for GaN p-n junctions of varying doping concentration are simulated using the obtained impact ionization coefficients, and their temperature dependence and conduction-type dependence were discussed. The simulated breakdown characteristics show good agreement with data reported previously, suggesting the high accuracy of the impact ionization coefficients obtained in this study.

DOI： 10.1063/5.0050793

Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing 査読有り

Hirukawa, K; Sumida, K; Sakurai, H; Fujikura, H; Horita, M; Otoki, Y; Sierakowski, K; Bockowski, M; Kachi, T; Suda, J

APPLIED PHYSICS EXPRESS 14 巻 ( 5 ) 2021年5月

記述言語：英語出版者・発行元：Applied Physics Express

Isochronal annealing was performed on Mg-ion-implanted GaN under 1 GPa N2 ambient pressure for 5 min at temperatures of 1573-1753 K. Secondary ion mass spectrometry showed diffusion of Mg atoms and introduction of H atoms during annealing. Deeper diffusion was observed with increasing temperature. From Hall-effect measurements, p-type conductivity was found even for the sample with the lowest annealing temperature of 1573 K. For this sample, the acceptor activation ratio was 23% and the compensation ratio was 93%. The acceptor activation ratio increased to almost 100% and the compensation ratio decreased to 12% with increasing annealing temperature.

DOI： 10.35848/1882-0786/abf4f3

Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors 査読有り

Ito, K; Tomita, K; Kikuta, D; Horita, M; Narita, T

JOURNAL OF APPLIED PHYSICS 129 巻 ( 8 ) 2021年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Applied Physics

The factors limiting channel mobility in AlSiO/p-type GaN-based metal-oxide-semiconductor field-effect transistors (MOSFETs) were systematically investigated. MOSFETs with various thin interfacial layers (ILs) between Al0.78Si0.22Oy films and Mg-doped GaN layers were prepared and found to exhibit different channel mobilities. The maximum effective mobility showed a significant correlation with the threshold voltage (Vt) and the hysteresis (ΔVt) in the transfer characteristics of these devices, such that the mobility decreased with increasing Vt and ΔVt. This effect can be explained by electron capture in and emission from border traps situated near the conduction band minimum for GaN. The insertion of a 3-nm-thick SiO2 IL drastically enhanced the effective mobility and simultaneously reduced the ΔVt value. Hall effect measurements with an applied gate voltage were used to determine the mobility of free electrons while excluding electrons captured in the border traps. The Hall effect mobility was much higher than the effective mobility, indicating that mobility was in fact reduced by the capture of electrons by the border traps. The ratio of electrons captured by border traps to the overall electrons induced by a gate bias was greatly lowered in a MOSFET incorporating a SiO2 IL. When a high vertical electric field of approximately 1 MV/cm was present in the device channel, the Hall effect mobility was slightly increased following the insertion of an IL. These results suggest that the IL reduced the interfacial roughness and/or affected the screening out of scattering due to potential fluctuations of the AlSiO.

DOI： 10.1063/5.0040700

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