論文 - 堀田 昌宏
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Horita, M; Narita, T; Kachi, T; Suda, J
APPLIED PHYSICS LETTERS 118 巻 ( 1 ) 2021年1月
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Aoshima, K; Horita, M; Suda, J; Hashizume, T
APPLIED PHYSICS EXPRESS 14 巻 ( 1 ) 2021年1月
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Zhang, ZY; Kushimoto, M; Horita, M; Sugiyama, N; Schowalter, LJ; Sasaoka, C; Amano, H
APPLIED PHYSICS LETTERS 117 巻 ( 15 ) 2020年10月
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Narita, T; Horita, M; Tomita, K; Kachi, T; Suda, J
JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 10 ) 2020年10月
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Progress on and challenges of p-type formation for GaN power devices 査読有り
Narita, T; Yoshida, H; Tomita, K; Kataoka, K; Sakurai, H; Horita, M; Bockowski, M; Ikarashi, N; Suda, J; Kachi, T; Tokuda, Y
JOURNAL OF APPLIED PHYSICS 128 巻 ( 9 ) 2020年9月
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Sakurai H., Narita T., Hirukawa K., Yamada S., Koura A., Kataoka K., Horita M., Ikarashi N., Bockowski M., Suda J., Kachi T.
Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2020-September 巻 頁: 321 - 324 2020年9月
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Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing 査読有り
Sakurai Hideki, Narita Tetsuo, Omori Masato, Yamada Shinji, Koura Akihiko, Iwinska Malgorzata, Kataoka Keita, Horita Masahiro, Ikarashi Nobuyuki, Bockowski Michal, Suda Jun, Kachi Tetsu
APPLIED PHYSICS EXPRESS 13 巻 ( 8 ) 2020年8月
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Identification of origin ofE(C)-0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy 査読有り
Horita Masahiro, Narita Tetsuo, Kachi Tetsu, Suda Jun
APPLIED PHYSICS EXPRESS 13 巻 ( 7 ) 2020年7月
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Kanegae K., Narita T., Tomita K., Kachi T., Horita M., Kimoto T., Suda J.
Japanese Journal of Applied Physics 59 巻 ( SG ) 2020年4月
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Aoshima, K; Kanegae, K; Horita, M; Suda, J
AIP ADVANCES 10 巻 ( 4 ) 2020年4月
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Narita, T; Tomita, K; Kataoka, K; Tokuda, Y; Kogiso, T; Yoshida, H; Ikarashi, N; Iwata, K; Nagao, M; Sawada, N; Horita, M; Suda, J; Kachi, T
JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( SA ) 2020年1月
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Sakurai, H; Narita, T; Hirukawa, K; Yamada, S; Koura, A; Kataoka, K; Horita, M; Ikarashi, N; Bockowski, M; Suda, J; Kachi, T
PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) 頁: 321 - 324 2020年
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Maeda T., Narita T., Yamada S., Kachi T., Kimoto T., Horita M., Suda J.
Technical Digest - International Electron Devices Meeting, IEDM 2019-December 巻 2019年12月
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Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing 査読有り
Sakurai, H; Omori, M; Yamada, S; Furukawa, Y; Suzuki, H; Narita, T; Kataoka, K; Horita, M; Bockowski, M; Suda, J; Kachi, T
APPLIED PHYSICS LETTERS 115 巻 ( 14 ) 2019年9月
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Maeda, T; Narita, T; Ueda, H; Kanechika, M; Uesugi, T; Kachi, T; Kimoto, T; Horita, M; Suda, J
APPLIED PHYSICS LETTERS 115 巻 ( 14 ) 2019年9月
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Maeda, T; Chi, XL; Tanaka, H; Horita, M; Suda, J; Kimoto, T
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 9 ) 2019年9月
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Kanegae, K; Fujikura, H; Otoki, Y; Konno, T; Yoshida, T; Horita, M; Kimoto, T; Suda, J
APPLIED PHYSICS LETTERS 115 巻 ( 1 ) 2019年7月
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Maeda, T; Narita, T; Ueda, H; Kanechika, M; Uesugi, T; Kachi, T; Kimoto, T; Horita, M; Suda, J
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SC ) 2019年6月
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Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination 査読有り
Maeda, T; Narita, T; Ueda, H; Kanechika, M; Uesugi, T; Kachi, T; Kimoto, T; Horita, M; Suda, J
IEEE ELECTRON DEVICE LETTERS 40 巻 ( 6 ) 頁: 941 - 944 2019年6月
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Acceptors activation of Mg-ion implanted GaN by ultra-high-pressure annealing 査読有り
Sakurai, H; Omori, M; Yamada, S; Koura, A; Suzuki, H; Narita, T; Kataoka, K; Horita, M; Kowski, MB; Suda, J; Kachi, T
2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) 2019年