研究者詳細 - 冨田　一義

論文 - 冨田　一義

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Characterization of hole traps in MOVPE-grown p-type GaN layers using low-frequency capacitance deep-level transient spectroscopy 査読有り国際誌

Kogiso Tatsuya, Narita Tetsuo, Yoshida Hikaru, Tokuda Yutaka, Tomita Kazuyoshi, Kachi Tetsu

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SC ) 2019年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Traps in MOVPE-grown Mg-doped GaN samples composed of p+/p-/n+ structures were investigated using low-frequency capacitance deep-level transient spectroscopy (DLTS). A drop-off in capacitance with decreasing temperature was observed. This is caused by the longer RC time constant of the diode with lower temperature, which is due to a decrease in the number of ionized Mg acceptors (which have a high ionization energy). This limits the use of lower temperatures in DLTS measurements. To extend DLTS to a lower temperature (105 K), DLTS using a capacitance measurement frequency of 1 kHz was applied. Thus, we can quantitatively discuss concentrations of traps with shallow energy levels. We obtained a nearly one-to-one relation between Ha (E V +0.29 eV) and Hd (E V +0.88 eV) in the p-type layer, which strongly supports the theoretical calculation that a carbon on a nitrogen site forms donor-like (Ha) and acceptor-like (Hd) states.

DOI： 10.7567/1347-4065/ab0408

Web of Science

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Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer 査読有り

Iwata Kenji, Narita Tetsuo, Nagao Masahiro, Tomita Kazuyoshi, Kataoka Keita, Kachi Tetsu, Ikarashi Nobuyuki

APPLIED PHYSICS EXPRESS 12 巻 ( 3 ) 2019年3月