研究者詳細 - 久志本　真希

論文 - 久志本　真希

分割表示 59 件中 41 - 59 件目／全件表示 >>

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Liu, ZB; Nitta, S; Usami, S; Robin, Y; Kushimoto, M; Deki, M; Honda, Y; Pristovsek, M; Amano, H

JOURNAL OF CRYSTAL GROWTH 509 巻頁： 50 - 53 2019年3月

Morphological study of InGaN on GaN substrate by supersaturation

Liu, ZB; Nitta, S; Robin, Y; Kushimoto, M; Deki, M; Honda, Y; Pristovsek, M; Amano, H

JOURNAL OF CRYSTAL GROWTH 508 巻頁： 58 - 65 2019年2月

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

Fukushima, H; Usami, S; Ogura, M; Ando, Y; Tanaka, A; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 12 巻 ( 2 ) 2019年2月

Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core- shell nanorods

Robin, Y; Evropeitsev, EA; Shubina, TV; Kirilenko, DA; Davydov, VY; Smirnov, AN; Toropov, AA; Eliseyev, IA; Bae, SY; Kushimoto, M; Nitta, S; Ivanov, SV; Amano, H

NANOSCALE 11 巻 ( 1 ) 頁： 193 - 199 2019年1月

Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

Matsumoto, K; Ono, T; Honda, Y; Murakami, S; Kushimoto, M; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 9 ) 2018年9月

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Robin, Y; Bae, SY; Shubina, TV; Pristovsek, M; Evropeitsev, EA; Kirilenko, DA; Davydov, VY; Smirnov, AN; Toropov, AA; Jmerik, VN; Kushimoto, M; Nitta, S; Ivanov, SV; Amano, H

SCIENTIFIC REPORTS 8 巻 2018年5月

<i>m</i>-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle <i>m</i>-Plane GaN Substrates

Tanaka, A; Ando, Y; Nagamatsu, K; Deki, M; Cheong, H; Ousmane, B; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 215 巻 ( 9 ) 2018年5月

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Yang, X; Nitta, S; Pristovsek, M; Liu, YH; Nagamatsu, K; Kushimoto, M; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 11 巻 ( 5 ) 2018年5月

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching

Matsumoto, K; Ono, T; Honda, Y; Yamamoto, T; Usami, S; Kushimoto, M; Murakami, S; Amano, H

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 255 巻 ( 5 ) 2018年5月

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Usami, S; Ando, Y; Tanaka, A; Nagamatsu, K; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H; Sugawara, Y; Yao, YZ; Ishikawa, Y

APPLIED PHYSICS LETTERS 112 巻 ( 18 ) 2018年4月

Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

Usami, S; Miyagoshi, R; Tanaka, A; Nagamatsu, K; Kushimoto, M; Deki, M; Nitta, S; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 巻 ( 8 ) 2017年8月

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Tanaka, A; Barry, O; Nagamatsu, K; Matsushita, J; Deki, M; Ando, Y; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 巻 ( 8 ) 2017年8月

Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer

Lee, HJ; Bae, SY; Lekhal, K; Tamura, A; Suzuki, T; Kushimoto, M; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 468 巻頁： 547 - 551 2017年6月

Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer

Bae, SY; Lekhal, K; Lee, HJ; Mitsunari, T; Min, JW; Lee, DS; Kushimoto, M; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 468 巻頁： 110 - 113 2017年6月

Development of Sustainable Smart Society based on Transformative Electronics

Ogura, M; Ando, Y; Usami, S; Nagamatsu, K; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Pristovsek, M; Kawai, H; Yagi, S; Amano, H

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 頁： . 2017年

Growth of semipolar (1-101) high-indium-content InGaN quantum wells 査読有り

Maki Kushimoto, Yoshio Honda, Hiroshi Amano

Japanese Journal of Applied Physics 55 巻 ( 5S ) 頁： 05FA10 2016年4月

Study of radiation detection properties of GaN pn diode 査読有り

Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano

Japanese Journal of Applied Physics 55 巻 ( 6S ) 頁： 05FJ02 2016年3月

Optically pumped lasing properties of (1-101) InGaN/GaN stripe multi quantum wells with ridge cavity structure on patterned (001) Si substrates 査読有り

Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

Applied Physics Express 8 巻 ( 2 ) 頁： 22702 2015年1月

Fabrication of InGaN/GaN multiple quantum wells on (1-101) GaN 査読有り

T. Tanikawa, T. Sano, M. Kushimoto, Y. Honda, M. Yamaguchi, and H. Amano

Japanese Journal of Applied Physics 52 巻 ( 8 ) 頁： 08JB05 2013年5月

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