研究者詳細 - 久志本　真希

論文 - 久志本　真希

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Study on Degradation of Deep-Ultraviolet Laser Diode 査読有り

Zhang, ZY; Yoshikawa, A; Kushimoto, M; Sasaoka, C; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 2024年2月

Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping 査読有り

Kumabe, T; Yoshikawa, A; Kawasaki, S; Kushimoto, M; Honda, Y; Arai, M; Suda, J; Amano, H

IEEE TRANSACTIONS ON ELECTRON DEVICES 2024年2月

Impact of unintentionally formed compositionally graded layer on carrier injection efficiency in AlGaN-based deep-ultraviolet laser diodes 査読有り

Ziyi Zhang, Akira Yoshikawa, Maki Kushimoto, Koji Aoto, Chiaki Sasaoka, and Hiroshi Amano

Applied Physics Letters 124 巻 ( 6 ) 2024年2月

Demonstration of AlN-based Vertical p-n Diodes with Dopant-free Distributed Polarization Doping 査読有り

Takeru Kumabe, Akira Yoshikawa, Seiya Kawasaki, Maki Kushimoto, Yoshio Honda, Manabu Arai, Jun Suda, and Hiroshi Amano

IEEE Transactions on Electron Devices 2024年2月

Impact of unintentionally formed compositionally graded layer on carrier injection efficiency in AlGaN-based deep-ultraviolet laser diodes 査読有り

Zhang, ZY; Yoshikawa, A; Kushimoto, M; Aoto, K; Sasaoka, C; Amano, H

APPLIED PHYSICS LETTERS 124 巻 ( 6 ) 2024年2月

単結晶AlN基板を用いたUV-C波長域レーザーダイオード査読有り

張梓懿，久志本真希，吉川陽，笹岡千秋，Leo J. SCHOWALTER，天野浩

レーザー研究（「高出力短波長光源開発とその応用技術の進展」特集号） Vol. 52 巻 ( No. 1 ) 2024年1月

Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs 査読有り

Yoshikawa, A; Zhang, ZY; Kushimoto, M; Aoto, K; Sasaoka, C; Amano, H

APPLIED PHYSICS LETTERS 123 巻 ( 22 ) 2023年11月

A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes

Nagata, K; Matsubara, T; Saito, Y; Kataoka, K; Narita, T; Horibuchi, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Takeuchi, T; Amano, H

CRYSTALS 13 巻 ( 3 ) 2023年3月

Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing 査読有り

Zhang, ZY; Kushimoto, M; Yoshikawa, A; Aoto, K; Sasaoka, C; Schowalter, LJ; Amano, H

APPLIED PHYSICS LETTERS 121 巻 ( 22 ) 2022年11月

Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes 査読有り

Kushimoto, M; Zhang, ZY; Yoshikawa, A; Aoto, K; Honda, Y; Sasaoka, C; Schowalter, LJ; Amano, H

APPLIED PHYSICS LETTERS 121 巻 ( 22 ) 2022年11月

Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection 査読有り

Zhang, ZY; Kushimoto, M; Yoshikawa, A; Aoto, K; Schowalter, LJ; Sasaoka, C; Amano, H

APPLIED PHYSICS EXPRESS 15 巻 ( 4 ) 2022年4月

Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED 査読有り

Matsubara, T; Nagatat, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 15 巻 ( 4 ) 2022年4月

Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode 査読有り

Nagata, K; Anada, S; Miwa, H; Matsui, S; Boyama, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Amano, H

APPLIED PHYSICS EXPRESS 15 巻 ( 4 ) 2022年4月

Visualization of depletion layer in AlGaN homojunction p-n junction 査読有り

Nagata, K; Anada, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Yamamoto, K; Hirayama, T; Amano, H

APPLIED PHYSICS EXPRESS 15 巻 ( 3 ) 2022年3月

Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate 招待有り査読有り

Kushimoto, M; Zhang, ZY; Honda, Y; Schowalter, LJ; Sasaoka, C; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( 1 ) 2022年1月

Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers 査読有り

Matsukura, Y; Inazu, T; Pernot, C; Shibata, N; Kushimoto, M; Deki, M; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 14 巻 ( 8 ) 2021年8月

Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations 査読有り

Nagata, K; Makino, H; Miwa, H; Matsui, S; Boyama, S; Saito, Y; Kushimoto, M; Honda, Y; Takeuchi, T; Amano, H

APPLIED PHYSICS EXPRESS 14 巻 ( 8 ) 2021年8月

Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate 査読有り

Kushimoto, M; Zhang, ZY; Sugiyama, N; Honda, Y; Schowalter, LJ; Sasaoka, C; Amano, H

APPLIED PHYSICS EXPRESS 14 巻 ( 5 ) 2021年5月

Development of UV-C laser diodes on AlN substrate 招待有り

Maki Kushimoto, Ziyi Zhang, Naoharu Sugiyama, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano

Proc. SPIE 11686 巻頁： 116860P 2021年3月

Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations 招待有り国際共著

F. Piva, C. De Santi, M. Buffolo, M. Deki, M. Kushimoto, H. Amano, H. Tomozawa, N. Shibata, G. Meneghesso, E. Zanoni, M. Meneghini

Proc. SPIE 11686 巻頁： 116860 2021年3月

Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation 査読有り国際共著

Piva F., De Santi C., Deki M., Kushimoto M., Amano H., Tomozawa H., Shibata N., Meneghesso G., Zanoni E., Meneghini M.

PHOTONICS RESEARCH 8 巻 ( 11 ) 頁： 1786-1791 2020年11月

AlN 基板上 AlGaN ヘテロ構造 UVC レーザーダイオード招待有り査読有り

久志本真希

日本結晶成長学会誌 47 巻 ( 3 ) 頁： 47-3-03 2020年10月

Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes 査読有り

Zhang Ziyi, Kushimoto Maki, Horita Masahiro, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS LETTERS 117 巻 ( 15 ) 2020年10月

Design and characterization of a low-optical-loss UV-C laser diode 査読有り

Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 9 ) 頁： . 2020年9月

Impact of high-temperature implantation of Mg ions into GaN 査読有り

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 ( 5 ) 頁： . 2020年5月

Experimental observation of high intrinsic thermal conductivity of AlN 査読有り

Cheng Zhe, Koh Yee Rui, Mamun Abdullah, Shi Jingjing, Bai Tingyu, Huynh Kenny, Yates Luke, Liu Zeyu, Li Ruiyang, Lee Eungkyu, Liao Michael E., Wang Yekan, Yu Hsuan Ming, Kushimoto Maki, Luo Tengfei, Goorsky Mark S., Hopkins Patrick E., Amano Hiroshi, Khan Asif, Graham Samuel

PHYSICAL REVIEW MATERIALS 4 巻 ( 4 ) 2020年4月

On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

Sakai Tadayoshi, Kushimoto Maki, Zhang Ziyi, Sugiyama Naoharu, Schowalter Leo J., Honda Yoshio, Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS LETTERS 116 巻 ( 12 ) 2020年3月

Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

Kushimoto Maki, Sakai Tadayoshi, Ueoka Yoshihiro, Tomai Shigekazu, Katsumata Satoshi, Deki Manato, Honda Yoshio, Amano Hiroshi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 2020年1月

Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism

Yang Xu, Nitta Shugo, Pristovsek Markus, Liu Yuhuai, Liao Yaqiang, Kushimoto Maki, Honda Yoshio, Amano Hiroshi

2D MATERIALS 7 巻 ( 1 ) 2020年1月

Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M

GALLIUM NITRIDE MATERIALS AND DEVICES XV 11280 巻 2020年

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes 査読有り国際共著国際誌

Liao, YQ; Chen, T; Wang, J; Ando, Y; Yang, X; Watanabe, H; Hirotani, J; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) 頁： 349 - 352 2020年

Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Takahashi Masahiro, Tanaka Atsushi, Ando Yuto, Watanabe Hirotaka, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Shima Kohei, Kojima Kazunobu, Chichibu Shigefusa F., Chen Kevin J., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 2019年12月

A 271.8 nm deep-ultraviolet laser diode for room temperature operation

Zhang Ziyi, Kushimoto Maki, Sakai Tadayoshi, Sugiyama Naoharu, Schowalter Leo J., Sasaoka Chiaki, Amano Hiroshi

APPLIED PHYSICS EXPRESS 12 巻 ( 12 ) 2019年12月

Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M

MICROELECTRONICS RELIABILITY 100 巻 2019年9月

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

Tanaka Atsushi, Nagamatsu Kentaro, Usami Shigeyoshi, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Bockowski Michal, Amano Hiroshi

AIP ADVANCES 9 巻 ( 9 ) 2019年9月

Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition

Matsumoto Koji, Ono Toshiaki, Honda Yoshio, Torigoe Kazuhisa, Kushimoto Maki, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 7 ) 2019年7月

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth

Ye Zheng, Nitta Shugo, Nagamatsu Kentaro, Fujimoto Naoki, Kushimoto Maki, Deki Manato, Tanaka Atsushi, Honda Yoshio, Pristovsek Markus, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 516 巻頁： 63-66 2019年6月

Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Narrow Excitonic Lines in Core-Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

Evropeitsev Evgeniy A., Robin Yoann, Shubina Tatiana V., Bae Si-Young, Nitta Shugo, Kirilenko Demid A., Davydov Valery Y., Smirnov Alexandr N., Toropov Alexey A., Kushimoto Maki, Ivanov Sergey V., Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 256 巻 ( 6 ) 2019年6月

Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi

JOURNAL OF CRYSTAL GROWTH 514 巻頁： 13-13 2019年5月

Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy

Liu, ZB; Nitta, S; Usami, S; Robin, Y; Kushimoto, M; Deki, M; Honda, Y; Pristovsek, M; Amano, H

JOURNAL OF CRYSTAL GROWTH 509 巻頁： 50 - 53 2019年3月

Morphological study of InGaN on GaN substrate by supersaturation

Liu, ZB; Nitta, S; Robin, Y; Kushimoto, M; Deki, M; Honda, Y; Pristovsek, M; Amano, H

JOURNAL OF CRYSTAL GROWTH 508 巻頁： 58 - 65 2019年2月

Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown

Fukushima, H; Usami, S; Ogura, M; Ando, Y; Tanaka, A; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 12 巻 ( 2 ) 2019年2月

Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core- shell nanorods

Robin, Y; Evropeitsev, EA; Shubina, TV; Kirilenko, DA; Davydov, VY; Smirnov, AN; Toropov, AA; Eliseyev, IA; Bae, SY; Kushimoto, M; Nitta, S; Ivanov, SV; Amano, H

NANOSCALE 11 巻 ( 1 ) 頁： 193 - 199 2019年1月

Detailed study of effects of duration of pre-AIN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition

Matsumoto, K; Ono, T; Honda, Y; Murakami, S; Kushimoto, M; Amano, H

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 9 ) 2018年9月

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Robin, Y; Bae, SY; Shubina, TV; Pristovsek, M; Evropeitsev, EA; Kirilenko, DA; Davydov, VY; Smirnov, AN; Toropov, AA; Jmerik, VN; Kushimoto, M; Nitta, S; Ivanov, SV; Amano, H

SCIENTIFIC REPORTS 8 巻 2018年5月

<i>m</i>-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle <i>m</i>-Plane GaN Substrates

Tanaka, A; Ando, Y; Nagamatsu, K; Deki, M; Cheong, H; Ousmane, B; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 215 巻 ( 9 ) 2018年5月

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Yang, X; Nitta, S; Pristovsek, M; Liu, YH; Nagamatsu, K; Kushimoto, M; Honda, Y; Amano, H

APPLIED PHYSICS EXPRESS 11 巻 ( 5 ) 2018年5月

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching

Matsumoto, K; Ono, T; Honda, Y; Yamamoto, T; Usami, S; Kushimoto, M; Murakami, S; Amano, H

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 255 巻 ( 5 ) 2018年5月

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Usami, S; Ando, Y; Tanaka, A; Nagamatsu, K; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H; Sugawara, Y; Yao, YZ; Ishikawa, Y

APPLIED PHYSICS LETTERS 112 巻 ( 18 ) 2018年4月

Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

Usami, S; Miyagoshi, R; Tanaka, A; Nagamatsu, K; Kushimoto, M; Deki, M; Nitta, S; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 巻 ( 8 ) 2017年8月

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Tanaka, A; Barry, O; Nagamatsu, K; Matsushita, J; Deki, M; Ando, Y; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 巻 ( 8 ) 2017年8月

Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer

Lee, HJ; Bae, SY; Lekhal, K; Tamura, A; Suzuki, T; Kushimoto, M; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 468 巻頁： 547 - 551 2017年6月

Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer

Bae, SY; Lekhal, K; Lee, HJ; Mitsunari, T; Min, JW; Lee, DS; Kushimoto, M; Honda, Y; Amano, H

JOURNAL OF CRYSTAL GROWTH 468 巻頁： 110 - 113 2017年6月

Development of Sustainable Smart Society based on Transformative Electronics

Ogura, M; Ando, Y; Usami, S; Nagamatsu, K; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Pristovsek, M; Kawai, H; Yagi, S; Amano, H

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 頁： . 2017年

Growth of semipolar (1-101) high-indium-content InGaN quantum wells 査読有り

Maki Kushimoto, Yoshio Honda, Hiroshi Amano

Japanese Journal of Applied Physics 55 巻 ( 5S ) 頁： 05FA10 2016年4月

Study of radiation detection properties of GaN pn diode 査読有り

Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki, and Takayuki Nakano

Japanese Journal of Applied Physics 55 巻 ( 6S ) 頁： 05FJ02 2016年3月

Optically pumped lasing properties of (1-101) InGaN/GaN stripe multi quantum wells with ridge cavity structure on patterned (001) Si substrates 査読有り

Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

Applied Physics Express 8 巻 ( 2 ) 頁： 22702 2015年1月

Fabrication of InGaN/GaN multiple quantum wells on (1-101) GaN 査読有り

T. Tanikawa, T. Sano, M. Kushimoto, Y. Honda, M. Yamaguchi, and H. Amano

Japanese Journal of Applied Physics 52 巻 ( 8 ) 頁： 08JB05 2013年5月

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論文 - 久志本　真希