Presentations -
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Effect of Electric Field in Multi-Electron Wave Packet Dynamics in Channel of Nanoscale devices International conference
G.Fujita, T.shiokawa, Y.Takeda, S.Konabe, M.Muraguchi, T.Yamamoto, T.Endo, Y.Hatsugai, K.Shiraishi
ISANN 2013
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SiC酸化により引き起こされるSi欠陥への第一原理計算からの考察
長川健太、神谷克政、洗平昌晃、白石賢二
先進パワー半導体研究会
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Multi-Electron Wave Packets Dynamics under MOSFET-like Potentials International conference
T.Shiokawa, G.Fujita, Y.Takeda, S.Konabe, M.Muraguchi, T.Yamamoto, T.Endo, Y.Hatsugai, K.Shiraishi
ISANN 2013
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Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories International conference
K. Kamiya, M. Y. Yang, B. Magyari-Köpe, M. Niwa, Y. Nishi and K. Shiraishi
224th Meeting of Electrochemical Society
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4Ｈ-Ｓｉｃの熱酸化速度の理論的研究-Ｓｉ面とＣ面の酸化速度の相違-
丸山翔太郎、遠藤賢太郎、長川健太、神谷克政、白石賢二
応用物理学会秋季学術講演会
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4Ｈ-Ｓｉｃ表面のＮＯ初期酸化過程の理論的検討
遠藤賢太郎、丸山翔太郎、加藤重徳、神谷克政、白石賢二
応用物理学会秋季学術講演会
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超格子材料を用いた低電力動作相変化デバイス
森川貴博、大柳孝純、木下勝治、田井光春、秋田憲一、高浦則克、加藤重徳、洗平昌晃、神谷克政、山本貴博、白石賢二
応用物理学会秋季学術講演会
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Intrinsic SiC Oxidation Problems Obtained by First Principle Calculations International conference
K. Shiraishi, K. Chokawa and K. Kamiya
International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
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Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM) International conference
K. Shiraishi, M.Y. Yang, S.Kato, M. Araidai, K. Kamiya, T. Yamamoto, T. Ohyanagi, N. Takaura, M. Niwa, B. Magyari-Kope, and Y. Nishi
2013 International Conference on Solid State Devices and Materials
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First principles material design toward nano-scale memory functional devices triggered by carrier injection International conference
Kenji Shiraishi
BIT's 2nd Annual World Congress of Advanced Materials-2013
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First Principles Studies on the Atomistic Processes of GaN Metal Organic Vapor Phase Epitaxy (MOVPE) International conference
Kenji Shiraishi
V-ASET2021 5th Edition of Applied Science, Engineering and Technology Virtual 2021.12.13
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First Principles Guiding Principles for the Switching Process in Oxide ReRAM International conference
3. Kenji Shiraishi, Moon Young Yang, Katsumasa Kamiya, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi,
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology
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On-Off Switching Mechanism of Oxide Based ReRAM by Ab Initio Electronic Structure Calculations International conference
Kenji Shiraishi, Moon Young Yang, Katsumasa Kamiya, Hiroyoshi Momida, Blanka Magyari-Köpe, Takahisa Ohno, Masaaki Niwa, Yoshio Nishi
2nd International Workshop on Resistive RAM,
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Computational Study toward Micro Electronics Engineering International conference
5. Kenji Shiraishi, Keita Yamaguchi, Moon Young Yang, Seong-Geon Park, Katsumasa Kamiya, Yasuteru Shigeta, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi
2012 28th International Conference on Microelectronics,
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Computational Science Studies toward Future Nano-Devices International conference
K. Shiraishi
WIMNACT Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology
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Guiding Principle of Highly Scalable MONOS-Type Memory International conference
1. K. Shiraishi, K. Yamaguchi, K. Kamiya, A. Otake, Y. Shigeta,
220th Electrochemical Society Meeting,