Presentations -
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GaN複合空孔の電子構造の第一原理計算による研究
櫻井亮介,長川健太,押山淳,白石賢二
第27回 電子デバイス界面テクノロジー研究会 2022.1.29
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AlN MOVPEにおけるトリメチルアルミニウム分解反応の理論的考察
赤石大地,洗平昌晃,白石賢二
第27回 電子デバイス界面テクノロジー研究会 2022.1.29
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Ab initio-based approach for reaction process at 4H-SiC/SiO2 interfaces International conference
T. Akiyama, T. Shimizu, T. Ito, H. Kageshima, K. Shiraishi
The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022) 2022.1.11
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First-principles study of two-dimensional materials of group IV elements International conference
M. Araidai, M. Itoh, M. Kurosawa, A. Ohta, K. Shiraishi
The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022) 2022.1.12
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Density Functional Theory study of Step Flow Growth of Gallium Nitride International conference
K. M. Bui, K. Shiraishi, A. Oshiyama
The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022) 2022.1.12
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First principles studies of the effects of carbon atoms on the potassium-ion electret used in vibration-powered generators International conference
Y. Ohata, M. Araidai, Y. Shibata, G. Hashiguchi, K. Shiraishi
The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022) 2022.1.12
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First-Principles Investigation of Hydrogen Adsorption on Stepped SiC Surface during CVD Growth International conference
T. Kimura, K. Chokawa, A. Oshiyama, K. Shiraishi
The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (IWSingularity 2022/ISWGPDs 2022) 2022.1.12
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第一原理計算による4H-SiC(0001)表面近傍での炭素空孔の取り込みやすさに関する研究
中島響,醍醐佳明,長川健太,白石賢二
第 21 回 日本表面真空学会中部支部 学術講演会 2021.12.18
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Effects of carbon atoms on the reliability of the potassium-ion electret used in vibration-powered generators International conference
Y. Ohata, M. Araidai, Y. Shibata, G. Hashiguchi, K. Shiraishi
International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES – SCIENCE AND TECHNOLOGY – (2021 IWDTF)
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Development of Physically Informed Neural Network Potential International conference
S. Ito, M. Araidai, K. Shiraishi
International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021)
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First Principles Studies on Atomic and Electronic Structures of VGa-VN divacancies International conference
R. Sakurai, K. Chokawa, A. Oshiyama, K. Shiraishi
International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021)
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First-principles studies on the effects of O atoms in the substrate on the oxidation of a vertical Si nanopillar International conference
F. Nanataki, M. Araidai, H. Kageshima, K. Shiraishi
International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021)
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First-principles Calculations between Screw Dislocation with Mg, H Impurities on GaN International conference
N. Inoue, Y. Harashima, K. Chokawa, K. Shiraishi, A. Oshiyama
International Conference on Materials and Systems for Sustainability 2021 (ICMaSS2021)
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本当のパワーデバイス材料をデータサイエンスで作るには?
白石賢二
複相機能開拓拠点ワークショップ 2021.11.2
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ニューラルネットワークを用いた新規ペアポテンシャルの開発
伊藤匠哉,洗平昌晃,白石賢二
日本物理学会 2021年秋季大会 2021.9.21
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CVD 成長における SiC 微斜面への水素被覆の理論研究
木村友哉,長川健太,押山淳,白石賢二
第82回応用物理学会秋季学術講演会 2021.9.10
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Kイオンエレクトレットの負電荷蓄積機構及び作製指針の理論的検討 Invited
中西徹,長川健太,洗平昌晃,年吉洋,杉山達彦,橋口原,白石賢二
第82回応用物理学会秋季学術講演会 2021.9.12
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Fe/MgO界面への窒素不純物が磁気異方性とTMRに与える影響について Invited
小川湧太郎,洗平昌晃,遠藤哲郎,白石賢二
第82回応用物理学会秋季学術講演会 2021.9.12
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Theoretical Study of H Adsorption on Stepped SiC Surface during CVD Growth International conference
T. Kimura, K. Chokawa, A. Oshiyama and K. Shiraishi
2021 International Conference on Solid State Devices and Materials (SSDM2021)
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First Principles Studies of Impurity Dislocation Complexes in GaN International conference
Kenji Shiraishi
THERMEC'2021 INTERNATIONAL CONFERENCE ON PROCESSING &MANUFACTURING OF ADVANCED MATERIALS