研究者詳細 - 中塚理

論文 - 中塚理

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Control of Dislocations and Sn Precipitations for Fabrication of Tensile-strained Ge on Ge1-xSnx Buffer Layer 査読有り

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Trans. MRS-J 34 巻 ( 2 ) 頁： 301-304 2009年

Plasma surface treatment of polymers with inductivity-coupled RF plasmas driven by low-inductance antenna units 査読有り

Y. Setsuhara, K. Cho, K. Takenaka, A. Ebe, M. Shiratani, M. Sekine, M. Hori, E. Ikenaga, H. Kondo, O. Nakatsuka, S. Zaima

Thin Solid Films 518 巻 ( 3 ) 頁： 1006-1011 2009年

Ferromagnetism and Electronic structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111) 査読有り

K. Hamaya, H. Itoh, O. Nakatsuka, K. Ueda, K. Yamamoto, M. Itakura, T. Taniyama, T. Ono, M. Miyao

Phys. Rev. Lett. 102 巻頁： 137204 (4 pages) 2009年

Formation of Uniaxial Tensile-strained Ge by Using Micro-patterning of Ge/Si1-xGe x/Si Structures 査読有り

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima

Trans. MRS-J 34 巻 ( 2 ) 頁： 305-308 2009年

*Silicide and germanide technology for contacts and gates in MOSFET applications 招待有り査読有り

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa

Thin Solid Films 517 巻 ( 1 ) 頁： 80-83 2008年8月

Characterization of bonding structures of directly bonded hybrid crystal orientation substrates 査読有り

E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, and S. Zaima

Thin Solid Films 517 巻 ( 1 ) 頁： 323-326 2008年8月

Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates 査読有り

S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima

Thin Solid Films 517 巻 ( 1 ) 頁： 159-162 2008年8月

Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method 査読有り

S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, and A. Sakai

Appl. Phys. Lett. 92 巻頁： 231916 2008年6月

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth 査読有り

S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima

Appl. Surf. Sci. 47 巻頁： 3742-3747 2008年5月

Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System 査読有り

O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa and S. Zaima

Jpn. J. Appl. Phys. 47 巻 ( 4 ) 頁： 2402-2406 2008年4月

Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates 査読有り

M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima

Appl. Surf. Sci. 254 巻 ( 19 ) 頁： 6048-60651 2008年3月

Effect of alcohol sources on synthesis of single-walled carbon nanotubes 査読有り

S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa and S. Zaima

Appl. Surf. Sci. 254 巻 ( 23 ) 頁： 7697-7702 2008年2月

Ge基板上に作製したPr酸化膜の評価査読有り

坂下満男, 鬼頭伸幸, 加藤亮祐, 近藤博基, 中塚理, 酒井朗, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第13回研究会）頁： 237-242 2008年2月

Contact properties of epitaxial NiSi2/heavily doped Si structures formed from Ni/Ti/Si systems 査読有り

S. Akimoto, O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, S. Zaima

Advanced Metallization Conference (AMC) 頁： 101-105 2008年

Interface and defect control for group IV channel engineering

A. Sakai, Y. Ohara, T. Ueda, E. Toyoda, K. Izunome, S. Takeuchi, Y. Shimura, O. Nakatsuka, M. Ogawa, S. Zaima, S. Kimura

ECS Transactions 16 巻 ( 10 ) 頁： 687-698 2008年

パルスレーザー蒸着法によるGe基板上へのPr酸化膜の作製とその構造及び電気的特性評価

鬼頭伸幸, 坂下満男, 酒井朗, 中塚理, 近藤博基, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 –材料・プロセス・評価の物理-”（第12回研究会）頁： 251-256 2007年2月

Strain relaxation of patterned Ge and SiGe layers on Si(001) substrates

S. Mochizuki, A. Sakai, O. Nakatsuka, H. Kondo, K. Yukawa, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, and S. Zaima

Semicond. Sci. Tech. 22 巻 ( 1 ) 頁： S132-S136 2007年1月

記述言語：英語掲載種別：研究論文（学術雑誌）

We have investigated dislocation morphology and strain relaxation mechanisms of SiGe and Ge sub-micron wide striped mesa lines patterned on Si(0 0 1) substrates. The patterning of SiGe and Ge layers principally leads to asymmetric elastic strain relaxation. Post-patterning anneal induces 60° dislocation introduction to relax the strain but the narrower the line width the more dominant is the elastic strain relaxation. In the case of 250 nm wide SiGe lines, 60° dislocation introduction along the line is critically suppressed so that asymmetric strain distribution is realized. On the other hand, for the Ge line structure, pre-formed pure edge dislocations elongate along both orthogonal directions at the heterointerface independent of the line geometry even with the line width of 250 nm. Thus strain relaxation occurs symmetrically and rigidly. These results can be explained by deference of the introduction and propagation mechanisms of 60° and pure-edge dislocations.

Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価

山崎理弘, 若園恭伸, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 –材料・プロセス・評価の物理-”（第12回研究会）頁： 197-202 2007年1月

Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on various types of substrates 査読有り

S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima

Semicond. Sci. Tech. 22 巻 ( 1 ) 頁： S231-S235 2007年1月

記述言語：英語掲載種別：研究論文（学術雑誌）

We have performed growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on Si(0 0 1), virtual Ge(0 0 1) and bulk Ge(0 0 1) substrates. In the case of Si(0 0 1), amorphous Ge1-xSnx phases are partially formed as well as many threading dislocations in Ge0.98Sn0.02 layers. Employing virtual Ge substrates to reduce the lattice mismatch at the interface leads to epitaxial Ge0.978Sn0.022 layers with a flat surface. Most of threading dislocations in the Ge0.978Sn0.022 layer comes from pre-existing ones in the virtual Ge substrate and propagates laterally, leaving misfit segments at the Ge0.978Sn0.022/virtual Ge interface, after post-deposition annealing (PDA). This simultaneously results in the reduction of threading dislocation density and the promotion of strain relaxation. In the case of bulk Ge(0 0 1), although low threading dislocation density can be achieved, less than 106 cm-2, the film exhibits surface undulation and a lesser degree of strain relaxation even after PDA.

Silicide and germanide technology for contacts and metal gates in MOSFET applications

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa

ECS Transactions 11 巻 ( 6 ) 頁： 197-205 2007年

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