Presentations -
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MOVPE選択成長法によるSi(001)7度オフ基板上への(1-101)面GaNの成長
本田善央,亀代典史,山口雅史,澤木宣彦
第48回応用物理学関係連合講演会
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Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE International conference
Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE
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Selective area growth and epitaxial lateral over growth of GaN on (111)Si by MOVPE International conference
The 10th International Conference of Metalorganic Vapor Phase Epitaxy
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MOVPE選択成長法による(111)シリコン基板上への六方晶GaN微細構造の作製と制御
本田善央,大竹洋一,川口靖利,山口雅史,澤木宣彦
信学会電子デバイス(ED)研究会
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MOVPE法による(111)Si基板上へのGaN選択成長(2)
本田善央,川口靖利,平松和政,澤木宣彦
第46回応用物理学関係連合講演会
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MOVPE法による(111)Si基板上へのGaN選択成長
本田善央,川口靖利,平松和政,澤木宣彦
第59回応用物理学会学術講演会
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Photocurrent and Photoluminescence measurements for InGaN Based LED Invited
Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano
LEDIA'17 2017.4.19
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選択MOVPE法による(111)Si基板上へのAlN/GaNピラミッド構造の作製 International conference
本田善央, 鳥飼正幸, 山口雅史, 澤木宣彦
第50回応用物理学関係連合講演会 2003.3.27
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Ⅲ族窒化物半導体の結晶成長技術とデバイス応用 International conference
本田善央, 久志本真希, 光成正, 山下康平, 山口雅史, 天野浩
第18回VBLシンポジウム 2014.11.17
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Uniform growth of GaN on AlN templated (111)Si substrate by HVPE
Uniform growth of GaN on AlN templated (111)Si substrate by HVPE 2004.7.19
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The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE
The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE 2003.5.25
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Surface morphology of (1-101) GaN/AlGaN/GaN heterostructure grown on (001)Si substrate by MOVPE International conference
Y. Honda, T. Hikosaka, E. H.Kim, M. Yamaguchi, N. Sawaki
第24 回電子材料シンポジウム 24th Electronic Materials Symposium (EMS-24) 2005.7.4
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Si基板上半極性面GaN上光デバイスとInGaN結晶成長のその場観察
本田善央, 田村彰, 宇佐美茂佳, 久志本真希, 光成正, 山口雅史, 天野浩
第5回フォトニックデバイス・応用技術研究会 2015.3.4
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Series Resistance of s-Si/AlGaN/GaN Structure Grown by MOVPE
Series Resistance of s-Si/AlGaN/GaN Structure Grown by MOVPE 2006.10.22
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Semi-polar GaN growth on patterned (001)Si substrate by MOVPE
Y. Honda, M. Kushimoto, H. Amano
2015 MRS Spring Meeting & Exhibit 2015.4.8
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Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE
Selective growth of GaN microstructures on (111) facets of a (001)Si substrate by MOVPE 2000.9.24
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Selective area growth and epitaxial lateral over growth of GaN on (111)Si by MOVPE
The 10th International Conference of Metalorganic Vapor Phase Epitaxy 2000.6.5
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Pressurized MOVPE of high-In-content InGaN
A.Tamura, K. Yamashita, T. Mitsunari, Y. Honda, H. Amano
ICMOVPE-17(Tue-Oral-1-1 ) 2014.7.13
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Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate
Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate 2005.12.5
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MOVPE選択成長法によるSi(001)7度オフ基板上への(1-101)面GaNの成長 International conference
本田善央, 亀代典史, 山口雅史, 澤木宣彦
第48回応用物理学関係連合講演会 2001.3.28