Presentations -
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Si基板上半極性面GaNへのInGaNヘテロ成長
本田善央
第1回窒化物半導体結晶成長講演会
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(110)Si 基板を用いた無極性(11-20)GaN の結晶成長
本田善央
特定領域研究「窒化物光半導体のフロンティア -材料潜在能力の極限発現-」公開シンポジウム
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加工Si 基板上(1-101)及び(11-22)GaN へのInGaN ヘテロ成長
本田善央
特定領域研究「窒化物光半導体のフロンティア -材料潜在能力の極限発現-」公開シンポジウム
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Series Resistance of s-Si/AlGaN/GaN Structure Grown by MOVPE International conference
Series Resistance of s-Si/AlGaN/GaN Structure Grown by MOVPE
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MOVPE growth and cathodoluminescence properties of GaN microcrystal co-doped with Zn and Si International conference
MOVPE growth and cathodoluminescence properties of GaN microcrystal co-doped with Zn and Si
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GaN micro-structure on Si substrate International conference
GaN micro-structure on Si substrate
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Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate International conference
Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate
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MOVPE選択成長法によるGaN微細構造の作製と評価
本田善央,山口雅史,澤木宣彦
第 9 回VBLシンポジウム
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Cathodoluminescence properties of InGaN codoped with Zn and Si International conference
Cathodoluminescence properties of InGaN codoped with Zn and Si
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Surface morphology of (1-101) GaN/AlGaN/GaN heterostructure grown on (001)Si substrate by MOVPE
Y. Honda, T. Hikosaka, E. H.Kim, M. Yamaguchi and N. Sawaki
第24 回電子材料シンポジウム 24th Electronic Materials Symposium (EMS-24)
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MOVPE成長したGaN/AlN/Siの電流電圧特性(Ⅱ)
近藤広幸,加藤智志,本田善央,山口雅史,澤木宣彦
第52回応用物理学関係連合講演会
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Uniform growth of GaN on AlN templated (111)Si substrate by HVPE International conference
Uniform growth of GaN on AlN templated (111)Si substrate by HVPE
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MOVPE 法による Si 基板上への GaN/AlN ピラミッド構造の作製
本田善央,中村剛,山口雅史,澤木宣彦
信学会電子デバイス(ED)研究会
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Defects in III-nitrides grown on patterned Si substrate International conference
Defects in III-nitrides grown on patterned Si substrate
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The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE International conference
The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE
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選択MOVPE法による(111)Si基板上へのAlN/GaNピラミッド構造の作製
本田善央,鳥飼正幸,山口雅史,澤木宣彦
第50回応用物理学関係連合講演会
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HVPE growth of GaN on a GaN templated (111) Si substrate International conference
HVPE growth of GaN on a GaN templated (111) Si substrate
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Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE International conference
Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE
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Growth of (1-101)GaN on a 7 degree off oriented (001)Si substrate by selective MOVPE International conference
Growth of (1-101)GaN on a 7 degree off oriented (001)Si substrate by selective MOVPE
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MOVPE選択成長法による(111)Si基板上へのクラックフリーGaNの作製
本田善央,黒岩洋佑,山口雅史,澤木宣彦
第48回応用物理学関係連合講演会