Papers - AMANO, Hiroshi
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Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN Reviewed
Iwaya Motoaki, Takeuchi Tetsuya, Yamaguchi Shigeo, Wetzel Christian, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L316-L318 1998
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Investigation of the leakage current in GaN p-n junctions Reviewed
Pernot Cyril, Hirano Akira, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L1202-L1204 1998
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Stress and defect control in GaN using low temperature interlayers Reviewed
Amano Hiroshi, Iwaya Motoaki, Kashima Takayuki, Katsuragawa Maki, Akasaki Isamu, Han Jung, Hearne Sean, Floro Jerry A, Chason Eric, Figiel Jeffrey
Jpn. J. Appl. Phys. Part : Letters Vol. 37 ( 0 ) page： L1540-L1542 1998
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Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters Reviewed
Akasaki Isamu, Amano Hiroshi
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 36 ( 0 ) page： 5393-5408 1997
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Electronic structure and temperature dependence of excitons in GaN Reviewed
Monemar B, Buyanova I A, Bergman J P, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 43 ( 0 ) page： 172-175 1997
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Melt-back etching of GaN Reviewed
Kaneko Yawara, Yamada Norihide, Takeuchi Tetsuya, Yamaoka Yoshifumi, Amano Hiroshi, Akasaki Isamu
Solid-State Electronics Vol. 41 ( 0 ) page： 295-298 1997
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Recessed gate GaN MODFETs Reviewed
Burm Jinwook, Schaff William J, Martin Glenn H, Eastman Lester F, Amano Hiroshi, Akasaki Isamu
Solid-State Electronics Vol. 41 ( 0 ) page： 247-250 1997
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The excitonic bandgap of GaN: dependence on substrate Reviewed
Monemar B, Bergman J P, Buyanova I A, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N T
Solid-State Electronics Vol. 41 ( 0 ) page： 239-241 1997
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Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance Reviewed
Kunzer M, Baur J, Kaufmann U, Schneider J, Amano H, Akasaki I
Solid-State Electronics Vol. 41 ( 0 ) page： 189-193 1997
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Optical characterization of GaN and related materials Reviewed
Monemar B, Bergman J P, Lundstroem T, Harris C I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K, Sawaki N
Solid-State Electronics Vol. 41 ( 0 ) page： 181-184 1997
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Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells Reviewed
Takeuchi Tetsuya, Sota Shigetoshi, Katsuragawa Maki, Komori Miho, Takeuchi Hideo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 36 ( 0 ) page： L382-L385 1997
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Optical properties of strained AlGaN and GaInN on GaN Reviewed
Takeuchi Tetsuya, Takeuchi Hideo, Sota Shigetoshi, Sakai Hiromitsu, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 36 ( 0 ) page： L177-L179 1997
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Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3 Reviewed
Merz C, Kunzer M, Santic B, Kaufmann U, Akasaki I, Amano H
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 43 ( 0 ) page： 176-180 1997
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Photoluminescence of exciton-polaritons in GaN Reviewed
Buyanova I A, Bergman J P, Monemar B, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 50 ( 0 ) page： 130-133 1997
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Electron gas in modulation doped GaN/AlGaN structures Reviewed
Bergman J P, Buyanov A, Lundstrom T, Monemar B, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 43 ( 0 ) page： 207-210 1997
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Quantum beat spectroscopy on excitons in GaN Reviewed
Zimmermann R, Hofmann M R, Euteneuer A, Mobius J, Weber D, Ruhle W W, Gobel E O, Meyer B K, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology- Vol. 50 ( 0 ) page： 205-207 1997
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Effects of buffer layers in heteroepitaxy of gallium nitride Reviewed
Hiramatsu K, Detchprohm T, Amano H, Akasaki I
Advances in the Understanding of Crystal Growth Mechanisms ( 0 ) page： 399-413 1997
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Progress and prospect of group-III nitride semiconductors Reviewed
Akasaki Isamu, Amano Hiroshi
J. Crystal Growth Vol. 175/176 ( 0 ) page： 29-36 1997
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Photoluminescence and optical gain in highly excited GaN Reviewed
Eckey L, Holst J, Hoffmann A, Broser I, Amano H, Akasaki I, Detchprohm T, Hiramatsu K
Journal of Luminescence Vol. 72-74 ( 0 ) page： 59-61 1997
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Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well Reviewed
Li Wei, Bergman Peder, Monemar Bo, Amano H, Akasaki I
J. Apl. Phys. Vol. 81 ( 0 ) page： 1005-1007 1997