Papers - AMANO, Hiroshi
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Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain Reviewed
Shapiro N A, Kim Y, Feick H, Weber E R, Perlin P, Yang J W, Akasaki I, Amano H
Physical Review B: Condensed Matter and Materials Physics Vol. 62 ( 0 ) page： R16318-R16321 2000
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Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 62 ( 0 ) page： R13302-R13305 2000
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Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study Reviewed
Hai P N, Chen W M, Buyanova I A, Monemar B, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 62 ( 0 ) page： R10607-R10609 2000
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Magneto-optical studies of the 088-eV photoluminescence emission in electron-irradiated GaN Reviewed
Wagner Mt, Buyanova I A, Thinh N Q, Chen W M, Monemar B, Lindstrom J L, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 62 ( 0 ) page： 16572-16577 2000
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Localized vibrational modes in GaN:O tracing the formation of oxygen DX-like centers under hydrostatic pressure Reviewed
Wetzel C, Amano H, Akasaki I, Ager J W III, Grzegory I, Topf M, Meyer B K
Physical Review B: Condensed Matter and Materials Physics Vol. 61 ( 0 ) page： 8202-8206 2000
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Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectric Ga1-xInxN/GaN quantum-well structures Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
Physical Review B: Condensed Matter and Materials Physics Vol. 61 ( 0 ) page： 2159-2163 2000
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Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes Reviewed
Pernot Cyril, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 39 ( 0 ) page： L387-L389 2000
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Fabrication and characterization of GaN-based laser diode grown on thick n-AlGaN contact layer Reviewed
Takeuchi T, Detchprohm T, Yano M, Yamaguchi M, Hayashi N, Iwaya M, Isomura K, Kimura K, Amano H, Akasaki I, Kaneko Y, Watanabe S, Yamaoka Y, Shioda R, Hidaka T, Kaneko Y, Yamada N
Physica Status Solidi A: Applied Research Vol. 176 ( 0 ) page： 31-34 1999
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Spectral study of photoluminescence from GaInN/GaN MQWs using CW and time-resolved measurements Reviewed
Watanabe S, Yamada N, Yamada Y, Taguchi T, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 216 ( 0 ) page： 335-339 1999
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Photoluminescence investigations of AlGaN on GaN epitaxial films Reviewed
Meyer Bruno K, Steude G, Goldner A, Hoffmann A, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 216 ( 0 ) page： 187-191 1999
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X-ray interference and crystal truncation rod observation of GaN and GaInN layers grown on sapphire with AlN buffer layer Reviewed
Tabuchi Masao, Takeda Yoshikazu, Matsumoto Nobuhiro, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers Vol. 38 ( 0 ) page： 281-284 1999
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Optical transitions of the Mg acceptor in GaN Reviewed
Hofmann Detlev M, Meyer Bruno K, Leiter Frank, von Forster Walter, Alves Helder, Romanov Nikolai, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular Papers Short Notes & Review Papers Vol. 38 ( 0 ) page： L1422-L1424 1999
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Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy Reviewed
Watanabe Atsushi, Takahashi Hirokazu, Tanaka Toshiyuki, Ota Hiroyuki, Chikuma Kiyofumi, Amano Hiroshi, Kashima Takayuki, Nakamura Ryo, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 38 ( 0 ) page： L1159-L1162 1999
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Microscopic investigation of Al043Ga057N on sapphire Reviewed
Kashima Takayuki, Nakamura Ryo, Iwaya Motoaki, Katoh Hisaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys.Part : Letters Vol. 38 ( 0 ) page： L1515-L1518 1999
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Correlation of vibrational modes and DX-like centers in GaN:O Reviewed
Wetzel C, Ager J W III, Topf M, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam Vol. 273-274 ( 0 ) page： 109-112 1999
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Mg acceptors in GaN Dependence of the g-anisotropy on the doping concentration Reviewed
Hofmann Detlev M, Burkhardt Wolfgang, Leiter Frank, Von Forster Walter, Alves Helder, Hofstaetter Albrecht, Meyer Bruno K, Romanov Nikolai G, Amano Hiroshi, Akasaki Isamu
Physica B: Condensed Matter Amsterdam Vol. 273-274 ( 0 ) page： 43-45 1999
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Energy loss rate of excitons in GaN Reviewed
Hagele D, Zimmermann R, Oestreich M, Hofmann M R, Ruhle W W, Meyer B K, Amano H, Akasaki I
Physica B: Condensed Matter Amsterdam Vol. 272 ( 0 ) page： 409-411 1999
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Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer Reviewed
Amano H, Iwaya M, Hayashi N, Kashima T, Nitta S, Wetzel C, Akasaki I
Physica Status Solidi B: Basic Research Vol. 216 ( 0 ) page： 683-689 1999
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Discrete Stark-like ladder in piezoelectric GaInN/GaN quantum wells Reviewed
Wetzel C, Kasumi M, Detchprohm T, Takeuchi T, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 216 ( 0 ) page： 399-403 1999
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Improvement of low-intensity ultraviolet photodetectors based on AlGaN with low threading dislocation density Reviewed
Pernot Cyril, Hirano A, Iwaya M, Detchprohm T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 176 ( 0 ) page： 147-151 1999