Presentations -
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Ga溶媒を用いた太陽電池用LPE-Si結晶のライフタイム成長温度依存性
佐藤祐輔, 宇治原徹, 小原和夫, 藤原航三, 佐崎 元, 宇佐美徳隆, 宍戸統悦, 中嶋一雄
第６４回応用物理学関係連合講演会, 福岡大学, 七隈キャンパス, 2003年8月30日-9月2日
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空間分解ラマン分光によるSGOI中HF欠陥の解析
沓掛健太朗, 宇佐美徳隆, 宇治原徹, 藤原航三, 佐崎 元, 中嶋一雄
第６４回応用物理学関係連合講演会, 福岡大学, 七隈キャンパス, 2003年8月30日-9月2日
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TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent International conference
"International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003), Lyon, France, October 5-10 (2003)"
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Way to choose appropriate solvents to prepare high-quality crystalline-silicon layers by LPE method for photovoltaic materials International conference
"Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20 - 24 (2003)"
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In situ observation of solid-liquid interface during crystal growth from silicon melt International conference
"Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20 - 24 (2003)"
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Way to choose appropriate solvents to prepare high-quality crystalline-silicon layers by LPE method for photovoltaic materials International conference
"Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20 - 24 (2003)"
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Growth and properties of SiGe multicrystals with microscopic compositional distribution for new Si/SiGe heterostructural solar cells International conference
"Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20 - 24 (2003)"
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Observation of geometrical selection of SiGe bulk crystal using EBSP measurement and its utilization for restraining polycrystallization International conference
"Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20 - 24 (2003)"
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Melt Growth of SiGe Bulk Crystals with Uniform Composition and SiGe Multicrystals with Microscopic Compositional Distribution for New Si/SiGe Heterostructural Solar Cells International conference
"The Fourth Romanian Conference on Advanced Materials, Constanta, Romania, September 15-18, 2003."
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Control of the Grain Orientations of Organic Semiconductor PTCDA Thin Film Crystals Epitaxially Grown on Hydrogen-Terminated Si(111) Substrate International conference
"The Fourth Romanian Conference on Advanced Materials, Constanta, Romania, September 15-18, 2003."
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How to grow a protein crystal of better quality: proposals from crystal growth physics International conference
"Crystallogenesis and Protein Crystallography, Mexico City, Mexico, June 23-26, 2003"
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Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy International conference
"International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003), Lyon, France, October 5-10 (2003)"
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Solution growth of self standing 6H-SiC single crystal using metal solvent International conference
"International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003), Lyon, France, October 5-10 (2003)"
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Prediction of strain induced poly-crystallization during crystal growth International conference
"Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20 - 24 (2003)"
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Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge thin film on Si-on-insulator substrate International conference
"First International SiGe Technology and Device Meeting, Nagoya, Japan, 15-17 January (2003)."
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Impact of the annealing temperature on the homogeneity of SiGe-on-insulator International conference
"The Third International Conference on SiGe(C) Epitaxy and Heterostructures, Santa Fe, New Mexico, U.S.A, March 9-12 (2003)."
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Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime International conference
"in European Materials Research Society 2003 Spring Meeting, Strasbourg, France, June 10-13 (2003)"
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Structure and property of directionally grown SiGe multicrystals with microscopic compositional distribution International conference
"3rd World Conference on Photovoltaic Energy Conversion, Osaka, May 11-18 (2003)."
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Direct observations of crystal growth from silicon International conference
"3rd World Conference on Photovoltaic Energy Conversion, Osaka, May 11-18 (2003)."
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What is the most important growth parameter on crystal quality of the silicon layer by LPE method? International conference
"3rd World Conference on Photovoltaic Energy Conversion, May 11 - 18, 2003Osaka International Convention Center (Grand Cube, Osaka) Osaka, Japan"