Papers - AMANO, Hiroshi
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High-efficiency GaN/AlxGa1-xN multi-quantum-well light emitter grown on low-dislocation density AlxGa1-xN Reviewed
Iwaya M, Terao S, Sano T, Takanami S, Ukai T, Nakamura R, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 188 ( 0 ) page： 117-120 2001
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Absorption spectroscopy and band structure in polarized GaN/AlxGa1-xN quantum wells Reviewed
Wetzel C, Kasumi M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 183 ( 0 ) page： 51-60 2001
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Control of strain in GaN by a combination of H2 and N2 carrier gases Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
J. Apl. Phys. Vol. 89 ( 0 ) page： 7820-7824 2001
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Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant Reviewed
Pozina G, Bergman J P, Monemar B, Yamaguchi S, Amano H, Akasaki I
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 82 ( 0 ) page： 137-139 2001
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Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices Reviewed
Yamaguchi Shigeo, Kosaki Masayoshi, Watanabe Yasuyukihiro, Yukawa Yohei, Nitta Shugo, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 79 ( 0 ) page： 3062-3064 2001
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Control of strain in GaN using an In doping-induced hardening effect Reviewed
Yamaguchi Shigeo, Kariya Michihiko, Kashima Takayuki, Nitta Shugo, Kosaki Masayoshi, Yukawa Yohei, Amano Hiroshi, Akasaki Isamu
Physical Review B: Condensed Matter and Materials Physics Vol. 64 ( 0 ) page： 035318/1-035318/5 2001
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Photoresponse and defect levels of AlGaN/GaN heterobipolar phototransistor grown on low-temperature AlN interlayer Reviewed
Mouillet Robert, Hirano Akira, Iwaya Motoaki, Detchprohm Theeradetch, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 40 ( 0 ) page： L498-L501 2001
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Metalorganic vapor phase epitaxial growth of high-quality (Al,In)N/(Al,Ga)N multiple layers on GaN Reviewed
Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 40 ( 0 ) page： L420-L422 2001
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Fracture of AlxGa1-xN/GaN heterostructure Compositional and impurity dependence Reviewed
Terao Shinji, Iwaya Motoaki, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 40 ( 0 ) page： L195-L197 2001
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Heteroepitaxial lateral overgrowth of GaN on periodically grooved substrates: a new approach for growing low-dislocation-density GaN single crystals Reviewed
Detchprohm Theeradetch, Yano Masahiro, Sano Shigekazu, Nakamura Ryo, Mochiduki Shingo, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Letters Vol. 40 ( 0 ) page： L16-L19 2001
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Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride Reviewed
Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Kiroyuki
Jpn. J. Appl. Phys. Part : Letters Vol. 40 ( 0 ) page： L1280-L1282 2001
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Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers Reviewed
Chow W W, Amano H
IEEE Journal of Quantum Electronics Vol. 37 ( 0 ) page： 265-273 2001
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Compensation mechanism in MOCVD and MBE grown GaN:Mg Reviewed
Alves H, Bohm M, Hofstaetter A, Amano H, Einfeldt S, Hommel D, Hofmann D M, Meyer B K
Physica B: Condensed Matter AmsterdamNetherlands Vol. 308-310 ( 0 ) page： 38-41 2001
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Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport Reviewed
Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
Materials Science Forum Vol. 353-356 ( 0 ) page： 791-794 2001
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Mass transport of GaN and reduction of threading dislocations Reviewed
Nitta S, Kashima T, Nakamura R, Iwaya M, Amano H, Akasaki I
Surface Review and Letters Vol. 7 ( 0 ) page： 561-564 2000
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Electrical conductivity of low-temperature-deposited Al01Ga09N interlayer Reviewed
Hayashi Nobuaki, Kamiyama Satoshi, Takeuchi Tetsuya, Iwaya Motoaki, Amano Hiroshi, Akasaki Isamu, Watanabe Satoshi, Kaneko Yawara, Yamada Norihide
Jpn. J. Appl. Phys. Vol. 39 ( 0 ) page： 6493-6495 2000
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Radiative recombination in (In,Ga)N/GaN multiple quantum wells Reviewed
Bergman J P, Monemar B, Pozina G, Sernelius B E, Holtz P O, Amano H, Akasaki I
Materials Science Forum Vol. 338-342 ( 0 ) page： 1571-1574 2000
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Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method Reviewed
Tabuchi M, Hirayama K, Takeda Y, Takeuchi T, Amano H, Akasaki I
Applied Surface Science Vol. 159-160 ( 0 ) page： 432-440 2000
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Mass transport and the reduction of threading dislocation in GaN Reviewed
Nitta S, Kariya M, Kashima T, Yamaguchi S, Amano H, Akasaki I
Applied Surface Science Vol. 159-160 ( 0 ) page： 421-426 2000
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Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy Reviewed
Yamaguchi S, Kariya M, Nitta S, Amano H, Akasaki I
Applied Surface Science Vol. 159-160 ( 0 ) page： 414-420 2000