Papers - AMANO, Hiroshi
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Microstructure in nonpolar m-plane GaN and AlGaN films Reviewed
Nagai T., Kawashima T., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I.
J. Crystal Growth Vol. 298 ( 0 ) page: 288-292 2007
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Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE Reviewed
Okada N., Kato N., Sato S., Sumii T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Bandoh A.
J. Crystal Growth Vol. 300 ( 0 ) page: 141-144 2007
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Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio Reviewed
Imura Masataka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
J. Crystal Growth Vol. 300 ( 0 ) page: 136-140 2007
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Epitaxial lateral overgrowth of AlxGa1-xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices Reviewed
Iida Kazuyoshi, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira.
J. Crystal Growth Vol. 298 ( 0 ) page: 265-267 2007
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Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates Reviewed
Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
J. Crystal Growth Vol. 298 ( 0 ) page: 261-264 2007
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Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers Reviewed
Imura Masataka, Nakano Kiyotaka, Narita Gou, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
J. Crystal Growth Vol. 298 ( 0 ) page: 257-260 2007
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High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE Reviewed
Kato N., Sato S., Sumii T., Fujimoto N., Okada N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.
J. Crystal Growth Vol. 298 ( 0 ) page: 215-218 2007
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Reduction in defect density over whole area of (1-100) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth. Reviewed
Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi B Vol. 244 ( 0 ) page: 1848-1852 2007
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Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X-ray diffraction analyses. Reviewed
Inaba Katsuhiko, Amano Hiroshi.
Physica Status Solidi B Vol. 244 ( 0 ) page: 1775-1779 2007
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Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates Reviewed
Balakrishnan K., Fujimoto N., Kitano T., Bandoh A., Imura M., Nakano K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Shimono K., Riemann T., Christen J.
Physica Status Solidi C Vol. 3 ( 0 ) page: 1392-1395 2006
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A hydrogen-related shallow donor in GaN? Reviewed
Monemar B., Paskov P. P., Bergman J. P., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica B Vol. 376-377 ( 0 ) page: 460-463 2006
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Dominant shallow acceptor enhanced by oxygen doping in GaN Reviewed
Monemar B., Paskov P. P., Tuomisto F., Saarinen K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kimura S.
Physica B Vol. 376-377 ( 0 ) page: 440-443 2006
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Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate Reviewed
Imura M., Honshio A., Miyake Y., Nakano K., Tsuchiya N., Tsuda M., Okadome Y., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica B Vol. 376-377 ( 0 ) page: 491-495 2006
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Dominant shallow acceptor enhanced by oxygen doping in GaN Reviewed
Monemar B, Paskov P P, Tuomisto F, Saarinen K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Kimura S
Physica B Vol. 376-377 ( 0 ) page: 440-443 2006
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6H-SiC homoepitaxial growth and optical property of boron- and nitrogen-doped donor-acceptor pair (DAP) emission on 1° -off substrate by closed-space sublimation method Reviewed
Kawai Y., Maeda T., Nakamura Y., Sakurai Y., Iwaya M., Kamiyama S., Amano H., Akasaki I., Yoshimoto M., Furusho T., Kinoshita H., Shiomi H.
Materials Science Forum Vol. 527 ( 0 ) page: 263-266 2006
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Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure Reviewed
Iwaya M., Kasugai H., Kawashima T., Iida K., Honshio A., Miyake Y., Kamiyama S., Amano H., Akasaki I.
Thin Solid Films Vol. 515 ( 0 ) page: 768-770 2006
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X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN Reviewed
Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Physica Status Solidi B Vol. 243 ( 0 ) page: 1524-1528 2006
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Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates Reviewed
Nakano K., Imura M., Narita G., Kitano T., Hirose Y., Fujimoto N., Okada N., Kawashima T., Iida K., Balakrishnan K., Tsuda M., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi A Vol. 203 ( 0 ) page: 1632-1635 2006
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Microstructure of thick AlN grown on sapphire by high-temperature MOVPE Reviewed
Imura M., Nakano K., Kitano T., Fujimoto N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.
Physica Status Solidi A Vol. 203 ( 0 ) page: 1626-1631 2006
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Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells Reviewed
Haratizadeh Hamid, Monemar Bo, Amano Hiroshi
Physica Status Solidi A Vol. 203 ( 0 ) page: 149-153 2006