Papers - AMANO, Hiroshi
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Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen Reviewed
Kamei K., Shirai Y., Tanaka T., Okada N., Yauchi A., Amano H..
Physica Status Solidi C: Vol. 4 ( 0 ) page： 2211-2214 2007
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Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping. Reviewed
Esmaeili M., Haratizadeh H., Monemar B., Paskov P. P., Holtz P. O., Bergman P., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Nanotechnology Vol. 18 ( 0 ) page： 025401/1-025401/6 2007
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Fabrication of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact Reviewed
Fujii T., Tsuyukuchi N., Hirose Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2708-2711 2007
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Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy Reviewed
Okada N., Imura M., Nagai T., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2528-2531 2007
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Mg-doped high-quality AlxGa1-xN (x = 0-1) grown by high-temperature metal-organic vapor phase epitaxy Reviewed
Imura M., Kato N., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2502-2505 2007
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Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE Reviewed
Balakrishnan K., Iida K., Bandoh A., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi C Vol. 4 ( 0 ) page： 2272-2276 2007
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Control of threshold voltage of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate contact Reviewed
Fujii Takahiro, Tsuyukuchi Norio, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page： 115-118 2007
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Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates Reviewed
Pozina G., Paskov P. P., Bergman J. P., Hemmingsson C., Hultman L., Monemar B., Amano H., Akasaki I., Usui A.
Appl. Phys. Lett. Vol. 91 ( 0 ) page： 221901/1-221901/3 2007
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Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates Reviewed
Pozina G., Monemar B., Paskov P. P., Hemmingsson C., Hultman L., Amano H., Akasaki I., Paskova T., Figge S., Hommel D., Usui A.
Physica B Vol. 401-402 ( 0 ) page： 302-306 2007
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Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth Reviewed
Senda Ryota, Miura Aya, Hayakawa Takemasa, Kawashima Takeshi, Iida Daisuke, Nagai Tetsuya, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Vol. 46 ( 0 ) page： L948-L950 2007
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Dependence of DAP emission properties on impurity concentrations in N-/B-co-doped 6H-SiC. Reviewed
Murata Satoshi, Nakamura Yoshihiro, Maeda Tomohiko, Shibata Yoko, Ikuta Mina, Sugiura Masaaki, Nitta Shugo, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Yoshimoto Masahiro, Furusho Tomoaki, Kinoshita Hiroyuki.
Materials Science Forum Vol. 556-557 ( 0 ) page： 335-338 2007
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Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification Reviewed
Okada N., Kato N., Sato S., Sumii T., Nagai T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Takagi T., Noro T., Bandoh A.
J. Crystal Growth Vol. 298 ( 0 ) page： 349-353 2007
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Microstructure in nonpolar m-plane GaN and AlGaN films Reviewed
Nagai T., Kawashima T., Imura M., Iwaya M., Kamiyama S., Amano H., Akasaki I.
J. Crystal Growth Vol. 298 ( 0 ) page： 288-292 2007
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Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE Reviewed
Okada N., Kato N., Sato S., Sumii T., Fujimoto N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Takagi T., Noro T., Bandoh A.
J. Crystal Growth Vol. 300 ( 0 ) page： 141-144 2007
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Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio Reviewed
Imura Masataka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
J. Crystal Growth Vol. 300 ( 0 ) page： 136-140 2007
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Epitaxial lateral overgrowth of AlxGa1-xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices Reviewed
Iida Kazuyoshi, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira.
J. Crystal Growth Vol. 298 ( 0 ) page： 265-267 2007
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Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates Reviewed
Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
J. Crystal Growth Vol. 298 ( 0 ) page： 261-264 2007
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Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers Reviewed
Imura Masataka, Nakano Kiyotaka, Narita Gou, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
J. Crystal Growth Vol. 298 ( 0 ) page： 257-260 2007
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High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE Reviewed
Kato N., Sato S., Sumii T., Fujimoto N., Okada N., Imura M., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Maruyama H., Noro T., Takagi T., Bandoh A.
J. Crystal Growth Vol. 298 ( 0 ) page： 215-218 2007
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Reduction in defect density over whole area of (1-100) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth. Reviewed
Kawashima T., Nagai T., Iida D., Miura A., Okadome Y., Tsuchiya Y., Iwaya M., Kamiyama S., Amano H., Akasaki I.
Physica Status Solidi B Vol. 244 ( 0 ) page： 1848-1852 2007